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Sample records for gaas photoconductive semiconductor

  1. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  2. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  3. High gain GaAs photoconductive semiconductor switches: Switch longevity

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; Mar, A.

    1998-07-01

    Optically activated, high gain GaAs switches are being tested for many different pulsed power applications that require long lifetime (longevity). The switches have p and n contact metallization (with intentional or unintentional dopants) configured in such a way as to produce p-i-n or n-i-n switches. The longevity of the switches is determined by circuit parameters and by the ability of the contacts to resist erosion. This paper will describe how the switches performed in test-beds designed to measure switch longevity. The best longevity was achieved with switches made with diffused contacts, achieving over 50 million pulses at 10 A and over 2 million pulses at 80 A.

  4. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.; THORNTON,R.L.; DONALDSON,R.D.

    1999-12-17

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approx}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  5. Longevity improvement of optically activated, high gain GaAs photoconductive semiconductor switches

    SciTech Connect

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.

    2000-03-02

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses at 23A, and over 100 pulses at 1kA. This is achieved by improving the ohmic contacts by doping the semi-insulating GaAs underneath the metal, and by achieving a more uniform distribution of contact wear across the entire switch by distributing the trigger light to form multiple filaments. This paper will compare various approaches to doping the contacts, including ion implantation, thermal diffusion, and epitaxial growth. The device characterization also includes examination of the filament behavior using open-shutter, infra-red imaging during high gain switching. These techniques provide information on the filament carrier densities as well as the influence that the different contact structures and trigger light distributions have on the distribution of the current in the devices. This information is guiding the continuing refinement of contact structures and geometries for further improvements in switch longevity.

  6. Longevity of optically activated, high gain GaAs photoconductive semiconductor switches

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; Mar, A.

    1997-08-01

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to well over 10 million pulses by reducing the density of carriers at the semiconductor to metal interface. This was achieved by reducing the density in the vertical and lateral directions. The first was achieved by varying the spatial distribution of the trigger light thereby widening the current filaments that are characteristic of the high gain switches. The authors reduced the carrier density in the vertical direction by using ion implantation. These results were obtained for currents of about 10 A, current duration of 3.5 ns, and switched voltage of {approximately}2 kV. At currents of {approximately}70 A, the switches last for 0.6 million pulses. In order to improve the performance at high currents new processes such as deep diffusion and epitaxial growth of contacts are being pursued. To guide this effort the authors measured a carrier density of 6 x 10{sup 18} electrons (or holes)/cm{sup 3} in filaments that carry a current of 5 A.

  7. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect

    Baca, A.G.; Brown, D.J.; Donaldson, R.D.; Helgeson, W.D.; Hjalmarson, H.P.; Loubriel, G.M.; Mar, A.; O'Malley, M.W.; Thornton, R.L.; Zutavern, F.J.

    1999-08-05

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 50 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer beneath the PCSS contacts which is very effective in the suppression of filament formation and alleviating current crowding to improve the longevity of PCSS. Virtually indefinite, damage-free operation is now possible at much higher current levels than before. The inherent damage-free current capacity of the switch depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approximately}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  8. Rectification and Photoconduction Mapping of Axial Metal-Semiconductor Interfaces Embedded in GaAs Nanowires

    NASA Astrophysics Data System (ADS)

    Orrù, Marta; Piazza, Vincenzo; Rubini, Silvia; Roddaro, Stefano

    2015-10-01

    Semiconductor nanowires have emerged as an important enabling technology and are today used in many advanced device architectures, with an impact both for what concerns fundamental science and in view of future applications. One of the key challenges in the development of nanowire-based devices is the fabrication of reliable nanoscale contacts. Recent developments in the creation of metal-semiconductor junctions by thermal annealing of metallic electrodes offer promising perspectives. Here, we analyze the optoelectronic properties of nano-Schottky barriers obtained thanks to the controlled formation of metallic AuGa regions in GaAs nanowire. The junctions display a rectifying behavior and their transport characteristics are analyzed to extract the average ideality factor and barrier height in the current architecture. The presence, location, and properties of the Schottky junctions are cross-correlated with spatially resolved photocurrent measurements. Broadband light emission is reported in the reverse breakdown regime; this observation, combined with the absence of electroluminescence at forward bias, is consistent with the device unipolar nature.

  9. Accurate measurement of the jitter time of GaAs photoconductive semiconductor switches triggered by a one-to-two optical fiber

    SciTech Connect

    Shi, Wei; Zhang, Lin; Gui, Huaimeng; Hou, Lei; Xu, Ming; Qu, Guanghui

    2013-04-15

    An improved method is proposed to measure the jitter time of the photoconductive semiconductor switches (PCSSs). A one-to-two fiber is utilized to separate and guide the 1053 nm laser beam to trigger two identical 3-mm-gap GaAs PCSSs synchronously. The jitter time is derived from the time lags of two switches turn-on by the error transfer theory. At a bias voltage of 1 kV, the jitter time is measured as 14.41 ps, which is the lowest jitter of GaAs PCSS that has been reported so far.

  10. Simulation of Current Filaments in Photoconductive Semiconductor Switches

    NASA Astrophysics Data System (ADS)

    Kambour, K.; Myles, Charles W.

    2005-03-01

    Optically-triggered, high-power photoconductive semiconductor switches (PCSS's) using semi-insulating GaAs are under development at Sandia. These switches carry current in high carrier-density filaments. The properties of these filaments can be explained by collective impact ionization theory in which energy redistribution by carrier-carrier scattering within the filament enhances the impact ionization. This allows these filaments to be sustained by fields which are relatively low compared to the bulk breakdown fields. For GaAs, the sustaining field is approximately 4.5 kV/cm. For this talk, a hydrodynamic implementation of the collective impact ionization theory is used to compute the properties of these filaments. These continuum calculations are based on previous calculations in which the steady-state properties of filaments are computed using a Monte Carlo method to solve the Boltzmann equation. The effects of defects will also be considered in the presentation of the results.

  11. Characteristics of current filamentation in high gain photoconductive semiconductor switching

    SciTech Connect

    Zutavern, F J; Loubriel, G M; O'Malley, M W; Helgeson, W D; McLaughlin, D L; Denison, G J

    1992-01-01

    Characteristics of current filamentation are reported for high gain photoconductive semiconductor switches (PCSS). Infrared photoluminescence is used to monitor carrier recombination radiation during fast initiation of high gain switching in large (1.5 cm gap) lateral GaAs PCSS. Spatial modulation of the optical trigger, a 200--300 ps pulse width laser, is examined. Effects on the location and number of current filaments, rise time, and delay to high gain switching, minimum trigger energy, and degradation of switch contacts are presented. Implications of these measurements for the theoretical understanding and practical development of these switches are discussed. Efforts to increase current density and reduce switch size and optical trigger energy requirements are described. Results from contact development and device lifetime testing are presented and the impact of these results on practical device applications is discussed.

  12. A photoconductive model for superior GaAs THz photomixers

    NASA Astrophysics Data System (ADS)

    Brown, E. R.

    1999-08-01

    Theoretical methods are used to evaluate the THz output from photomixer structures consisting of interdigitated electrodes and planar antennas on top of a low-temperature-grown GaAs layer. Consistent with experiment, the THz power from a standard photomixer is found to be limited by low external quantum efficiency (˜1%). This arises primarily from low photoconductive gain, which is attributed to a long transit time (between electrodes) for the majority of photocarriers generated in the structure. The modeling is then applied to an improved structure containing a thinner absorbing layer (≈0.34 μm for λ=0.85 μm pump) with a dielectric mirror below it to induce resonant-cavity absorption near the surface where the gain is higher. Through increased gain and absorptivity, the model predicts ≈7× greater THz output for the same optical pump power.

  13. Subnanosecond, high voltage photoconductive switching in GaAs

    SciTech Connect

    Druce, R.L.; Pocha, M.D.; Griffin, K.L. ); O'Bannon, B.J. )

    1990-01-01

    We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

  14. High current density contacts for photoconductive semiconductor switches

    SciTech Connect

    Baca, A.G.; Hjalmarson, H.P.; Loubriel, G.M.; McLaughlin, D.L.; Zutavern, F.J.

    1993-08-01

    The current densities implied by current filaments in GaAs photoconductive semiconductor switches (PCSS) are in excess of 1 MA/cm{sup 2}. As the lateral switches are tested repeatedly, damage accumulates at the contacts until electrical breakdown occurs across the surface of the insulating region. In order to improve the switch lifetime, the incorporation of n- and p-type ohmic contacts in lateral switches as well as surface geometry modifications have been investigated. By using p-type AuBe ohmic contacts at the anode and n-type AuGe ohmic contacts at the cathode, contact lifetime improvements of 5--10x were observed compared to switches with n-type contacts at both anode and cathode. Failure analysis on samples operated for 1--1,000 shots show that extensive damage still exists for at least one contact on all switches observed and that temperatures approaching 500{degrees}C are can be reached. However, the n-type AuGe cathode is often found to have no damage observable by scanning electron microscopy (SEM). The observed patterns of contact degradation indicate directions for future contact improvements in lateral switches.

  15. Electrical Breakdown Physics in Photoconductive Semiconductor Switches (PCSS).

    SciTech Connect

    Mar, Alan; Zutavern, Fred J.; Vawter, Gregory A.; Hjalmarson, Harold P.; Gallegos, Richard Joseph; Bigman, Verle Howard

    2016-01-01

    Advanced switching devices with long lifetime will be critical components for Linear Transformer Drivers (LTDs) in next-generation accelerators. LTD designs employ high switch counts. With current gas switch technology at %7E10e3 shot life, a potential game-changer would be the development of a reliable low-impedance (%3C35nh) optically-triggered compact solid-state switch capable of switching 200kV and 50kA with 10e5 shotlife or better. Other applications of this technology, are pulse shaping programmable systems for dynamic material studies (Z-next, Genesis), efficient pulsed power systems for biofuel feedstock, short pulse (10 ns) accelerator designs for the Defense Threat Reduction Agency (DTRA), and sprytron replacements in NW firing sets. This LDRD project has succeeded in developing new optically-triggered photoconductive semiconductor switch (PCSS) designs that show great promise for scaling to modules capable of 200kV (DC) and 5kA current that can be stacked in parallel to achieve 100's of kA with 10e5 shot lifetime. . Executive Summary Advanced switching devices with long lifetime will be critical components for Linear Transformer Drivers (LTDs) in next-generation accelerators. LTD designs employ high switch counts. With current gas switch technology at %7E10e3 shot life, a potential game-changer would be the development of a reliable low-impedance (%3C35nh) optically-triggered compact solid-state switch capable of switching 200kV and 50kA with 10e5 shotlife or better. Other applications of this technology, are pulse shaping programmable systems for dynamic material studies (Z-next, Genesis), efficient pulsed power systems for biofuel feedstock, short pulse (10 ns) accelerator designs for the Defense Threat Reduction Agency (DTRA), and sprytron replacements in NW firing sets. This LDRD project has succeeded in developing new optically-triggered photoconductive semiconductor switch (PCSS) designs that show great promise for scaling to modules capable

  16. Electrical Breakdown and Lock-On in Photoconductive Semiconductor Switch (PCSS) Devices

    NASA Astrophysics Data System (ADS)

    Hjalmarson, Harold; Kambour, Kenneth; Zutavern, Fred; Myles, Charley

    2008-03-01

    Optically-triggered, high-power photoconductive semiconductor switches (PCSS's) using semi-insulating GaAs are being developed at Sandia Labs. These switches carry current in high carrier-density filaments. The properties of these filaments can be explained by redistribution of carrier energy caused by carrier-carrier scattering within the filament. This process enhances the impact ionization rate thus allowing these filaments to be sustained by relatively low fields, a process called lock-on. For GaAs, the sustaining field is approximately 4.5 kV/cm. For this talk, the physics mechanisms for lock-on and high-field electrical breakdown are described. Also, a continuum implementation of these physics mechanisms is used to compute the properties of these filaments. These continuum calculations are based on previous calculations in which the filament properties are computed using a Monte Carlo method to solve the steady-state Boltzmann equation.

  17. The temporal dynamics of impurity photoconductivity in quantum wells in GaAs

    SciTech Connect

    Aleshkin, V. Ya. E-mail: aleshkin@ipm.sci-nnov.ru

    2015-10-15

    A theory of cascade capture at charged donors in quantum wells (QWs) is developed without using the Fokker-Planck approximation, which is not valid in QWs. The time dependences of impurity photoconductivity and photoelectron concentration in GaAs QWs are determined. The cascade capture time as a function of the charge donor concentration is calculated.

  18. Photoconductive terahertz generation from textured semiconductor materials

    NASA Astrophysics Data System (ADS)

    Collier, Christopher M.; Stirling, Trevor J.; Hristovski, Ilija R.; Krupa, Jeffrey D. A.; Holzman, Jonathan F.

    2016-03-01

    Photoconductive (PC) terahertz (THz) emitters are often limited by ohmic loss and Joule heating—as these effects can lead to thermal runaway and premature device breakdown. To address this, the proposed work introduces PC THz emitters based on textured InP materials. The enhanced surface recombination and decreased charge-carrier lifetimes of the textured InP materials reduce residual photocurrents, following the picosecond THz waveform generation, and this diminishes Joule heating in the emitters. A non-textured InP material is used as a baseline for studies of fine- and coarse-textured InP materials. Ultrafast pump-probe and THz setups are used to measure the charge-carrier lifetimes and THz response/photocurrent consumption of the respective materials and emitters. It is found that similar temporal and spectral characteristics can be achieved with the THz emitters, but the level of photocurrent consumption (yielding Joule heating) is greatly reduced in the textured materials.

  19. Breakover mechanism of GaAs photoconductive switch triggering spark gap for high power applications

    NASA Astrophysics Data System (ADS)

    Tian, Liqiang; Shi, Wei; Feng, Qingqing

    2011-11-01

    A spark gap (SG) triggered by a semi-insulating GaAs photoconductive semiconductor switch (PCSS) is presented. Currents as high as 5.6 kA have been generated using the combined switch, which is excited by a laser pulse with energy of 1.8 mJ and under a bias of 4 kV. Based on the transferred-electron effect and gas streamer theory, the breakover characteristics of the combined switch are analyzed. The photoexcited carrier density in the PCSS is calculated. The calculation and analysis indicate that the PCSS breakover is caused by nucleation of the photoactivated avalanching charge domain. It is shown that the high output current is generated by the discharge of a high-energy gas streamer induced by the strong local electric field distortion or by overvoltage of the SG resulting from quenching of the avalanching domain, and periodic oscillation of the current is caused by interaction between the gas streamer and the charge domain. The cycle of the current oscillation is determined by the rise time of the triggering electric pulse generated by the PCSS, the pulse transmission time between the PCSS and the SG, and the streamer transit time in the SG.

  20. Linearity of photoconductive GaAs detectors to pulsed electrons

    SciTech Connect

    Ziegler, L.H.

    1995-12-31

    The response of neutron damaged GaAs photoconductor detectors to intense, fast (50 psec fwhm) pulses of 16 MeV electrons has been measured. Detectors made from neutron damaged GaAs are known to have reduced gain, but significantly improved bandwidth. An empirical relationship between the observed signal and the incident electron fluence has been determined.

  1. Photoconductive terahertz generation from textured semiconductor materials

    PubMed Central

    Collier, Christopher M.; Stirling, Trevor J.; Hristovski, Ilija R.; Krupa, Jeffrey D. A.; Holzman, Jonathan F.

    2016-01-01

    Photoconductive (PC) terahertz (THz) emitters are often limited by ohmic loss and Joule heating—as these effects can lead to thermal runaway and premature device breakdown. To address this, the proposed work introduces PC THz emitters based on textured InP materials. The enhanced surface recombination and decreased charge-carrier lifetimes of the textured InP materials reduce residual photocurrents, following the picosecond THz waveform generation, and this diminishes Joule heating in the emitters. A non-textured InP material is used as a baseline for studies of fine- and coarse-textured InP materials. Ultrafast pump-probe and THz setups are used to measure the charge-carrier lifetimes and THz response/photocurrent consumption of the respective materials and emitters. It is found that similar temporal and spectral characteristics can be achieved with the THz emitters, but the level of photocurrent consumption (yielding Joule heating) is greatly reduced in the textured materials. PMID:26979292

  2. Tests on photoconductive semiconductor switches for subnanosecond risetime, multimegavolt pulser applications

    NASA Astrophysics Data System (ADS)

    Carboni, V. B.; Smith, I. D.; Pixton, R. M.; Abdalla, M. D.; Zutavern, F. J.; Loubriel, G. M.; Omalley, M. W.

    Experiments were performed to determine the applicability of photoconductive semiconductor switches (PCSS) for use as output switches in subnanosecond pulse for electromagnetic pulse (EMP) simulators. Lateral switches made of Gallium Arsenide and Silicon with 1.5 cm long insulating regions immersed in Fluorinert were tested in a 50 ohm tri-plate transmission line geometry. Mode locked and Q-switched lasers were used to trigger both a gas switched Marx generator which pulse-charged the transmission line in 100 to 150 ns and to illuminate the PCSS via an optical delay line. Illuminating beam energies and electric field strengths at switchout were varied to determine minimum risetimes and light energies required for triggering. The GaAs switches were operated in the high gain (lock-on) mode. Risetimes as fast as 600 ps were observed using a mode locked laser and 700 ps using a Q-switched laser. The minimum light energy required to trigger GaAs was 22 (mu)J and the highest switched fields for both GaAs and Si is about 60 kV/cm.

  3. Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs.

    PubMed

    Tani, M; Matsuura, S; Sakai, K; Nakashima, S

    1997-10-20

    Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling technique. The total radiation power was also measured by a bolometer for comparison of the relative radiation power. The radiation spectra of the LT-GaAs-based and SI-GaAs-based photoconductive antennas of the same design showed no significant difference. The pump-power dependencies of the radiation power showed saturation for higher pump intensities, which was more serious in SI-GaAs-based antennas than in LT-GaAs-based antennas. We attributed the origin of the saturation to the field screening of the photocarriers. PMID:18264312

  4. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    NASA Astrophysics Data System (ADS)

    Xiangrong, Ma; Wei, Shi; Weili, Ji; Hong, Xue

    2011-12-01

    A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.

  5. High gain photoconductive semiconductor switch having tailored doping profile zones

    SciTech Connect

    Baca, Albert G.; Loubriel, Guillermo M.; Mar, Alan; Zutavern, Fred J; Hjalmarson, Harold P.; Allerman, Andrew A.; Zipperian, Thomas E.; O'Malley, Martin W.; Helgeson, Wesley D.; Denison, Gary J.; Brown, Darwin J.; Sullivan, Charles T.; Hou, Hong Q.

    2001-01-01

    A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

  6. Photoconductive semiconductor switches: Laser Q-switch trigger and switch-trigger laser integration

    SciTech Connect

    Loubriel, G.M.; Mar, A.; Hamil, R.A.; Zutavern, F.J.; Helgeson, W.D.

    1997-12-01

    This report provides a summary of the Pulser In a Chip 9000-Discretionary LDRD. The program began in January of 1997 and concluded in September of 1997. The over-arching goal of this LDRD is to study whether laser diode triggered photoconductive semiconductor switches (PCSS) can be used to activate electro-optic devices such as Q-switches and Pockels cells and to study possible laser diode/switch integration. The PCSS switches we used were high gain GaAs switches because they can be triggered with small amounts of laser light. The specific goals of the LDRD were to demonstrate: (1) that small laser diode arrays that are potential candidates for laser-switch integration will indeed trigger the PCSS switch, and (2) that high gain GaAs switches can be used to trigger optical Q-switches in lasers such as the lasers to be used in the X-1 Advanced Radiation Source and the laser used for direct optical initiation (DOI) of explosives. The technology developed with this LDRD is now the prime candidate for triggering the Q switch in the multiple lasers in the laser trigger system of the X-1 Advanced Radiation Source and may be utilized in other accelerators. As part of the LDRD we developed a commercial supplier. To study laser/switch integration we tested triggering the high gain GaAs switches with: edge emitting laser diodes, vertical cavity surface emitting lasers (VCSELs), and transverse junction stripe (TJS) lasers. The first two types of lasers (edge emitting and VCSELs) did activate the PCSS but are harder to integrate with the PCSS for a compact package. The US lasers, while easier to integrate with the switch, did not trigger the PCSS at the US laser power levels we used. The PCSS was used to activate the Q-switch of the compact laser to be used in the X-1 Advanced Radiation Source.

  7. Photoconductive Semiconductor Switch Technology for Short Pulse Electromagnetics and Lasers

    SciTech Connect

    Denison, Gary J.; Helgeson, Wesley D.; Hjalmarson, Harold P.; Loubriel, Guillermo M.; Mar, Alan; O'Malley, Martin W.; Zutavern, Fred J.

    1999-08-05

    High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electromagnetic pulses foc (1) compact, repetitive accelerators, (2) ultra-wide band impulse sources, (3) precision gas switch triggers, (4) optically-activated firesets, and (5) high power optical pulse generation and control. High power, sub-nanosecond optical pulses are used for active optical sensors such as compact optical radars and range-gated hallistic imaging systems. Following a brief introduction to high gain PCSS and its general applications, this paper will focus on PCSS for optical pulse generation and control. PCSS technology can be employed in three distinct approaches to optical pulse generation and control: (1) short pulse carrier injection to induce gain-switching in semiconductor lasers, (2) electro-optical Q-switching, and (3) optically activated Q-switching. The most significant PCSS issues for these applications are switch rise time, jitter, and longevity. This paper will describe both the requirements of these applications and the most recent results from PCSS technology. Experiments to understand and expand the limitations of high gain PCSS will also be described.

  8. Research on synchronization of 15 parallel high gain photoconductive semiconductor switches triggered by high power pulse laser diodes

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Xia, Liansheng; Chen, Yi; Liu, Yi; Yang, Chao; Ye, Mao; Deng, Jianjun

    2015-01-01

    The synchronization of 15 parallel high gain gallium arsenide photoconductive semiconductor switches (GaAs PCSS) has been researched aiming to get higher output voltage. Each PCSS is triggered independently by a high power pulse laser diode. The pulse width, energy, peak power, and central wavelength of the laser pulse are approximately 18 ns, 360 μJ, 20 kW, and 905 nm, respectively. In the stacked Blumlein transmission lines structure, the synchronous conduction of 15 parallel GaAs PCSSs has been achieved by offering optimized bias voltage and laser parameters. The method of synchronization calculation is given, and the synchronization of the 15 parallel GaAs PCSSs is measured as 775 ps. Furthermore, influences of the bias voltage, laser parameters on the synchronization are analyzed. In the output terminal, superimposed by the output voltages of 15 Blumlein transmission lines, the total output voltage reaches up to 328 kV, which is the highest output voltage of GaAs PCSSs that has been reported so far.

  9. Influence of EL2 deep level on photoconduction of semi-insulating GaAs under ultrashort pulse photoinjection

    NASA Astrophysics Data System (ADS)

    Shi, Wei; Xie, Guangyong

    2016-02-01

    To investigate the influence of EL2 deep level on photoconduction of in semi-insulating GaAs (SI-GaAs), a 3 mm-electrode-gap lateral SI-GaAs photoconductive chip was manufactured and tested by using ultrashort pulse laser with 1064 nm wavelength, 10 ns pulsewidth, 3.0 mm light spot diameter and single pulse energy mean of 3.0 mJ. Based on the experimental results and the theory of trapping effect, the photon absorption process of EL2 defects in SI-GaAs is analyzed. For the influence of EL2 deep level, the lifetime of the electron gets shorter and the persistent photoconductivity (PPC) is significant. With increasing of voltage, the decay time constant of photoconduction is reduced and the decay index gets bigger for the ultrashort pulse photoinjection.

  10. Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.

    PubMed

    Boland, Jessica L; Casadei, Alberto; Tütüncüoglu, Gözde; Matteini, Federico; Davies, Christopher L; Jabeen, Fauzia; Joyce, Hannah J; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B

    2016-04-26

    Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18) cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13 ns in undoped nanowires to 3.8 and 2.5 ns in n-doped and p-doped nanowires, respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices, such as solar cells and nanowire lasers. PMID:26959350

  11. Steady-state photoconductivity and multi-particle interactions in high-mobility organic semiconductors

    PubMed Central

    Irkhin, P.; Najafov, H.; Podzorov, V.

    2015-01-01

    Fundamental understanding of photocarrier generation, transport and recombination under a steady-state photoexcitation has been an important goal of organic electronics and photonics, since these processes govern such electronic properties of organic semiconductors as, for instance, photoconductivity. Here, we discovered that photoconductivity of a highly ordered organic semiconductor rubrene exhibits several distinct regimes, in which photocurrent as a function of cw (continuous wave) excitation intensity is described by a power law with exponents sequentially taking values 1, 1/3 and ¼. We show that in pristine crystals this photocurrent is generated at the very surface of the crystals, while the bulk photocurrent is drastically smaller and follows a different sequence of exponents, 1 and ½. We describe a simple experimental procedure, based on an application of “gauge effect” in high vacuum, that allows to disentangle the surface and bulk contributions to photoconductivity. A model based on singlet exciton fission, triplet fusion and triplet-charge quenching that can describe these non-trivial effects in photoconductivity of highly ordered organic semiconductors is proposed. Observation of these effects in photoconductivity and modeling of the underlying microscopic mechanisms described in this work represent a significant step forward in our understanding of electronic properties of organic semiconductors. PMID:26478121

  12. Steady-state photoconductivity and multi-particle interactions in high-mobility organic semiconductors

    NASA Astrophysics Data System (ADS)

    Irkhin, P.; Najafov, H.; Podzorov, V.

    2015-10-01

    Fundamental understanding of photocarrier generation, transport and recombination under a steady-state photoexcitation has been an important goal of organic electronics and photonics, since these processes govern such electronic properties of organic semiconductors as, for instance, photoconductivity. Here, we discovered that photoconductivity of a highly ordered organic semiconductor rubrene exhibits several distinct regimes, in which photocurrent as a function of cw (continuous wave) excitation intensity is described by a power law with exponents sequentially taking values 1, 1/3 and ¼. We show that in pristine crystals this photocurrent is generated at the very surface of the crystals, while the bulk photocurrent is drastically smaller and follows a different sequence of exponents, 1 and ½. We describe a simple experimental procedure, based on an application of “gauge effect” in high vacuum, that allows to disentangle the surface and bulk contributions to photoconductivity. A model based on singlet exciton fission, triplet fusion and triplet-charge quenching that can describe these non-trivial effects in photoconductivity of highly ordered organic semiconductors is proposed. Observation of these effects in photoconductivity and modeling of the underlying microscopic mechanisms described in this work represent a significant step forward in our understanding of electronic properties of organic semiconductors.

  13. Steady-state photoconductivity and multi-particle interactions in high-mobility organic semiconductors.

    PubMed

    Irkhin, P; Najafov, H; Podzorov, V

    2015-01-01

    Fundamental understanding of photocarrier generation, transport and recombination under a steady-state photoexcitation has been an important goal of organic electronics and photonics, since these processes govern such electronic properties of organic semiconductors as, for instance, photoconductivity. Here, we discovered that photoconductivity of a highly ordered organic semiconductor rubrene exhibits several distinct regimes, in which photocurrent as a function of cw (continuous wave) excitation intensity is described by a power law with exponents sequentially taking values 1, 1/3 and ¼. We show that in pristine crystals this photocurrent is generated at the very surface of the crystals, while the bulk photocurrent is drastically smaller and follows a different sequence of exponents, 1 and ½. We describe a simple experimental procedure, based on an application of "gauge effect" in high vacuum, that allows to disentangle the surface and bulk contributions to photoconductivity. A model based on singlet exciton fission, triplet fusion and triplet-charge quenching that can describe these non-trivial effects in photoconductivity of highly ordered organic semiconductors is proposed. Observation of these effects in photoconductivity and modeling of the underlying microscopic mechanisms described in this work represent a significant step forward in our understanding of electronic properties of organic semiconductors. PMID:26478121

  14. Quantitative comparison of terahertz emission from (100) InAs surfaces and a GaAs large-aperture photoconductive switch at high fluences.

    PubMed

    Reid, Matthew; Fedosejevs, Robert

    2005-01-01

    InAs has previously been reported to be an efficient emitter of terahertz radiation at low excitation fluences by use of femtosecond laser pulses. The scaling and saturation of terahertz emission from a (100) InAs surface as a function of excitation fluence is measured and quantitatively compared with the emission from a GaAs large-aperture photoconductive switch. We find that, although the instantaneous peak radiated terahertz field from (100) InAs exceeds the peak radiated signals from a GaAs large-aperture photoconductive switch biased at 1.6 kV/cm, the pulse duration is shorter. For the InAs source the total energy radiated is less than can be obtained from a GaAs large-aperture photoconductive switch. PMID:15662896

  15. Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Chen, R. S.; Wang, W. C.; Lu, M. L.; Chen, Y. F.; Lin, H. C.; Chen, K. H.; Chen, L. C.

    2013-07-01

    The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed.The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr01635h

  16. Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties

    NASA Astrophysics Data System (ADS)

    Chen, R. S.; Wang, W. C.; Chan, C. H.; Lu, M. L.; Chen, Y. F.; Lin, H. C.; Chen, K. H.; Chen, L. C.

    2013-11-01

    The photoconduction (PC) efficiencies of various single-crystalline metal oxide semiconductor nanowires (NWs) have been investigated and compared based on the materials' inherent properties. The defined PC efficiency (normalized gain) of SnO2 NWs is over one to five orders of magnitude higher than that of its highly efficient counterparts such as ZnO, TiO2, WO3, and GaN. The inherent property of the material allowed the photoconductive gain of an SnO2 single-NW photodetector to easily reach 8 × 108 at a low bias of 3.0 V and a low light intensity of 0.05 Wm-2, which is the optimal reported value so far for the single-NW photodetectors. The probable physical origins, such as charged surface state density and surface band bending, that caused the differences in PC efficiencies and carrier lifetimes are also discussed.

  17. Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires.

    PubMed

    Chen, R S; Wang, W C; Lu, M L; Chen, Y F; Lin, H C; Chen, K H; Chen, L C

    2013-08-01

    The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed. PMID:23779084

  18. Material effects in photoconductive frozen wave generators

    NASA Astrophysics Data System (ADS)

    Oconnell, Robert M.; Thaxter, J. B.; Bell, Richard E.

    1991-04-01

    Linear photoconductive gallium arsenide (GaAs) fast closing switches for microwave applications, such as frozen wave pulse generation, are analyzed and compared to experimental measurements. Material effects in photo-conductive frozen wave generators fabricated in semiconductor-based microstrip transmission line are studied from three perspectives; frozen wave propagation in the line; the spacing between the switches in a frozen wave generator and their maximum number; and the switching behavior of the gap-switch itself, which is modeled as a lumped-element, modified Ebers-Moll equivalent circuit. The experimental transient behavior of hybrid gap-switches fabricated on semi-insulating GaAs with ohmic and non-ohmic contacts is compared with predicted performance. Picosecond laser pulses, doubled to 527 micron wavelength are used to excite linear photoconductivity in 75 micron gap switches mounted in a test fixture of 50 ohm microstrip lines on alumina.

  19. Assembly of Submicron Ferromagnets in GaAs Semiconductors*

    NASA Astrophysics Data System (ADS)

    Shi, Jing

    1996-03-01

    Spin-dependent electronic phenomena discovered in nanoscale metallic systems have raised interesting scientific questions regarding spin interactions and are currently finding technological applications. In particular, incorporating microscopic magnets within semiconducting compounds offers the exciting possibility of combining local magnetism with the flexibility of semiconductor-based quantum electronic structures. This work demonstrates that submicron room-temperature ferromagnets have been successfully formed in GaAs semiconductors through a simple process of ion implantation and subsequent heat treatment (J. Shi et al), Nature 377, 707 (1995); J. Shi et al, J. Appl. Phys. (accepted for publication, 1996).. A combination of transmission electron, atomic force, and magnetic force microscopies have been used in conjunction with magnetization measurements to directly examine the structural and magnetic properties of this new system. After Mn^+-implantation at various doses, rapid thermal annealing crystallizes in situ submicron GaMn ferromagnetic particles ( ~ 200 nm) at the GaAs surface. These GaMn particles are crystalline, some with quasicrystalline-like order. Bulk magnetization measurements show that the GaMn particles are room temperature ferromagnets with a Curie temperature far exceeding room temperature. Both the particle size and coercivity can be varied by controlling the implantation and annealing conditions. High resolution magnetic force microscopy images on single GaMn ferromagnets reveal that unmagnetized samples contain both magnetic single- and multi-domain particles, but after initial magnetization, the single-domain state predominates, with magnetic moments aligned preferentially along the [001] directions of the GaAs substrate. In particular, magnetic force imaging has been performed in a changing magnetic field (up to 8 kOe) to directly study and image magnetization reversal of single-domain particles. *Work done in collaboration with D

  20. Nanoscale Photoconductivity Imaging of Thin-film Semiconductors by Laser-assisted Microwave Impedance Microscopy

    NASA Astrophysics Data System (ADS)

    Chu, Zhaodong; Wu, Di; Ren, Yuan; Yang, Seungcheol; Sun, Liuyang; Li, Xiaoqin; Lai, Keji

    The photo-response of semiconductors is usually studied by detecting the photocurrent across source-drain electrodes under light illumination. By integrating the microwave impedance microscopy (MIM) technique with focused-laser stimulation, we are able to perform the real-space photoconductivity mapping of photo-sensitive materials without the need of patterning contact electrodes. Here, we report the MIM results of various thin-film materials, such as In2Se3 nano-sheets and transition metal dichalcogenides (TMD) flakes, illuminated by laser beams of different wavelengths in the ambient condition. With no or below-gap illumination, the samples were highly resistive, as indicated by the low MIM signals. The MIM contrast emerges under above-gap light and increases as increasing laser intensity, which clearly demonstrates the local imaging of photoconductivity rather than the transport photocurrent. Interestingly, clear domain structures with mesoscopic length scales were seen in the data due to the coexistence of multiple phases in In2Se3. The unique combination of MIM and laser stimulation thus provides a new direction to explore the microscopic origin of various light-driven phenomena in complex systems. We gratefully acknowledge financial support from NSF.

  1. Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films

    SciTech Connect

    Nagpal, Prashant; Klimov, Victor I.

    2011-09-27

    Colloidal semiconductor nanocrystals have attracted significant interest for applications in solution-processable devices such as light-emitting diodes and solar cells. However, a poor understanding of charge transport in nanocrystal assemblies, specifically the relation between electrical conductance in dark and under light illumination, hinders their technological applicability. Here we simultaneously address the issues of 'dark' transport and photoconductivity in films of PbS nanocrystals, by incorporating them into optical field-effect transistors in which the channel conductance is controlled by both gate voltage and incident radiation. Spectrally resolved photoresponses of these devices reveal a weakly conductive mid-gap band that is responsible for charge transport in dark. The mechanism for conductance, however, changes under illumination when it becomes dominated by band-edge quantized states. In this case, the mid-gap band still has an important role as its occupancy (tuned by the gate voltage) controls the dynamics of band-edge charges.

  2. System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors

    SciTech Connect

    Harris, John Richardson; Caporaso, George J; Sampayan, Stephen E

    2013-10-22

    A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

  3. Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films

    PubMed Central

    Nagpal, Prashant; Klimov, Victor I.

    2011-01-01

    Colloidal semiconductor nanocrystals have attracted significant interest for applications in solution-processable devices such as light-emitting diodes and solar cells. However, a poor understanding of charge transport in nanocrystal assemblies, specifically the relation between electrical conductance in dark and under light illumination, hinders their technological applicability. Here we simultaneously address the issues of 'dark' transport and photoconductivity in films of PbS nanocrystals, by incorporating them into optical field-effect transistors in which the channel conductance is controlled by both gate voltage and incident radiation. Spectrally resolved photoresponses of these devices reveal a weakly conductive mid-gap band that is responsible for charge transport in dark. The mechanism for conductance, however, changes under illumination when it becomes dominated by band-edge quantized states. In this case, the mid-gap band still has an important role as its occupancy (tuned by the gate voltage) controls the dynamics of band-edge charges. PMID:21952220

  4. 20 THz broadband generation using semi-insulating GaAs interdigitated photoconductive antennas.

    PubMed

    Hale, P J; Madeo, J; Chin, C; Dhillon, S S; Mangeney, J; Tignon, J; Dani, K M

    2014-10-20

    We demonstrate broadband (20 THz), high electric field, terahertz generation using large area interdigitated antennas fabricated on semi-insulating GaAs. The bandwidth is characterized as a function of incident pulse duration (15-35 fs) and pump energy (2-30 nJ). Broadband spectroscopy of PTFE is shown. Numerical Drude-Lorentz simulations of the generated THz pulses are performed as a function of the excitation pulse duration, showing good agreement with the experimental data. PMID:25401668

  5. Effect of defect saturation on terahertz emission and detection properties of low temperature GaAs photoconductive switches

    NASA Astrophysics Data System (ADS)

    Rihani, Samir; Faulks, Richard; Beere, Harvey; Page, Hideaki; Gregory, Ian; Evans, Michael; Ritchie, David A.; Pepper, Michael

    2009-08-01

    We present a study into the properties of terahertz (THz) emission and detection using low temperature grown GaAs photoconductive switches over a range of ex situ anneal temperatures. Our analysis focuses on the effect of defect saturation, which has been confirmed in many experiments. However its effect on the THz emission and detection has so far not been fully investigated. In this letter, we examine the dependence of the radiated THz pulse width (full width at half maximum) upon optical power, and show that the differences in the characteristics with annealing can be theoretically accounted for when defect saturation is taken into account. Defect saturation was found to substantially increase the trapping time of photoexcited electrons, which in turn can cause THz pulse broadening at high optical powers. This effect was found to increase with anneal temperature due to the decrease in defect density. The radiated peak THz amplitude from emitters increases monotonically with increasing optical power across the range of anneal temperatures investigated. In the detector configuration, however, the detected peak THz amplitude reaches a maximum before starting to decrease with increasing optical power. The latter trend was observed for devices annealed at temperatures higher than 300 °C and is attributed to the onset of defect saturation.

  6. Ultrafast terahertz emission properties in GaAs semiconductor

    NASA Astrophysics Data System (ADS)

    Wang, Aihua; Shi, Yulei; Zhou, Qingli

    2015-08-01

    Ultrafast carrier dynamics in Schottky barriers is an extremely active area of research in recent years. The observation of the generation of terahertz pulses from metal/semiconductor interfaces provides a technique to characterize electronic properties of these materials. However, a detailed analysis of these phenomena has not been performed satisfactorily. In this work, the measurements of optically generated terahertz emission from Au/GaAs interfaces are investigated in detail. We observe that, under high laser power excitation, terahertz signals from bare GaAs wafers and Au/GaAs samples exhibit an opposite polarity. The polarity-flip behaviors in the terahertz beams are also observed in the temperature-dependent measurements and the femtosecond pump-generation studies of the Au/GaAs interfaces. These effects can be fully explained in terms of the dynamics of carrier transfer in the Au/GaAs Schottky barriers, which involves the internal photoelectric emission and the electron tunneling effect, and picosecond time constants are found for these processes.

  7. Plasma Etching of n-Type 4H-SiC for Photoconductive Semiconductor Switch Applications

    NASA Astrophysics Data System (ADS)

    Ekinci, Huseyin; Kuryatkov, Vladimir V.; Mauch, Daniel L.; Dickens, James C.; Nikishin, Sergey A.

    2015-05-01

    Photoconductive semiconductor switches (PCSS) fabricated on high-purity semi-insulating 4H-SiC substrates (000) are capable of switching high currents in compact packages with long device lifetimes. A heavily doped n-type SiC epitaxial layer of appropriate thickness is required to form low-resistance ohmic contacts with these devices. In addition, to enhance the performance of the PCSSs, the SiC surface between the ohmic contacts must be extremely smooth. We report a chlorine-based, inductively coupled plasma reactive ion-etching process yielding n-type SiC epitaxial layers with the required smoothness. The rate of etching and post-etching surface morphology were dependent on plasma conditions. We found that the surface smoothness of epitaxial layers can be improved by including BCl3 in the argon-chlorine mixture. The optimum etching process yielded very smooth surfaces (˜0.3 nm RMS) at a relatively high rate of etching of ˜220 nm/min. This new fabrication approach significantly reduced the on-state resistance of the PCSS device and improved its durability of operation.

  8. Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.

    PubMed

    Tuominen, Marjukka; Yasir, Muhammad; Lång, Jouko; Dahl, Johnny; Kuzmin, Mikhail; Mäkelä, Jaakko; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Schulte, Karina; Punkkinen, Risto; Korpijärvi, Ville-Markus; Polojärvi, Ville; Guina, Mircea

    2015-03-14

    Atomic-scale understanding and processing of the oxidation of III-V compound-semiconductor surfaces are essential for developing materials for various devices (e.g., transistors, solar cells, and light emitting diodes). The oxidation-induced defect-rich phases at the interfaces of oxide/III-V junctions significantly affect the electrical performance of devices. In this study, a method to control the GaAs oxidation and interfacial defect density at the prototypical Al2O3/GaAs junction grown via atomic layer deposition (ALD) is demonstrated. Namely, pre-oxidation of GaAs(100) with an In-induced c(8 × 2) surface reconstruction, leading to a crystalline c(4 × 2)-O interface oxide before ALD of Al2O3, decreases band-gap defect density at the Al2O3/GaAs interface. Concomitantly, X-ray photoelectron spectroscopy (XPS) from these Al2O3/GaAs interfaces shows that the high oxidation state of Ga (Ga2O3 type) decreases, and the corresponding In2O3 type phase forms when employing the c(4 × 2)-O interface layer. Detailed synchrotron-radiation XPS of the counterpart c(4 × 2)-O oxide of InAs(100) has been utilized to elucidate the atomic structure of the useful c(4 × 2)-O interface layer and its oxidation process. The spectral analysis reveals that three different oxygen sites, five oxidation-induced group-III atomic sites with core-level shifts between -0.2 eV and +1.0 eV, and hardly any oxygen-induced changes at the As sites form during the oxidation. These results, discussed within the current atomic model of the c(4 × 2)-O interface, provide insight into the atomic structures of oxide/III-V interfaces and a way to control the semiconductor oxidation. PMID:25686555

  9. Influence of different illumination profiles on the on-state resistances of silicon carbide photoconductive semiconductor switches

    SciTech Connect

    Wang, Langning Xun, Tao; Yang, Hanwu; Liu, Jinliang; Zhang, Yu

    2014-04-15

    Characteristics of a silicon-carbide (SiC) photoconductive switch under different illumination profiles are presented. We triggered a V-doped semi-insulated 6H-SiC switch with lateral geometry using a laser beam of 532-nm wavelength. Photoconductivity tests for different spot profiles and locations show that such switches achieve a minimum on-state resistance when the switching gap is illuminated. The differences between on-state resistances are small for various partial illuminations of the switching gap. Semiconductor modeling is used to simulate the electric field and current profiles for different partial illuminations. The simulation results show poor on-state switch performance when partially illuminated. Based on these results, a more revealing circuit model for the switch matches well with experimental results for partial illuminations.

  10. Enhanced excitonic photoconductivity due to built-in internal electric field in TlGaSe{sub 2} layered semiconductor

    SciTech Connect

    Seyidov, MirHasan Yu. Suleymanov, Rauf A.; Şale, Yasin; Balaban, Ertan

    2014-12-07

    The strong enhancement, by several orders of magnitude, of the excitonic peak within the photoconductivity spectrum of TlGaSe{sub 2} semiconductor was observed. The samples were polarized in external dc electric field, which was applied prior to the measurements. Due to the accumulation of charges near the surface, an internal electric field was formed. Electron-hole pairs that were created after the absorption of light are fallen in and then separated by the built-in electric field, which prevents radiative recombination process.

  11. Experimental study and chemical application of GaAs semiconductor laser treating trigeminal neuralgia

    NASA Astrophysics Data System (ADS)

    Qiu, Ke-Qum; Cao, Shu-Chen; Wang, Hu-Zhong; Wang, Ke-Ning; Xiao, Ton-Ha; Shen, Ke-Wei

    1993-03-01

    GaAs semiconductor laser was used to treat trigeminal neuralgia with an effective rate of 91.1%, and no side effects were found in 67 cases. Changes in and the recovery of the trigeminal nerve cell were studied with light and electromicroscope. Discussed in this article are the time length and quantity of laser treatment with low power. Experimental study and clinical application of the GaAs semiconductor laser have been carried out in our department since 1987. One-hundred-fifteen patients with various diseases in the maxillofacial region (including 67 cases of trigeminal neuralgia) have been treated with satisfactory effects and without any side-effects. The wavelength of the laser is 904 mu, the largest pulse length is 200 mu, and the average power is 2000 HZ.

  12. Nano photoconductive switches for microwave applications

    NASA Astrophysics Data System (ADS)

    Tripon-Canseliet, C.; Faci, S.; Decoster, D.; Pagies, A.; Yoon, S. F.; Pey, K. L.; Chazelas, J.

    2013-01-01

    This paper addresses the interaction between light wave technologies and semiconductors devices at the nanoscale. Research works aiming at the development of emerging 1D and 2D nano materials such as nanodots, nanowires, nanotubes and nanoribbons open the way to overcome the performances bottleneck of conventional microwave photoconductive switches. Such new materials offer new opportunities for the confinement of light/matter interaction and exhibit interesting energy band diagram in an optical wavelength spectrum covering visible to NIR. Strong material interests stays for the generation of very high local density of carriers in contrast with a high dark resistivity, in association with a high carrier mobility. These challenges can be reached today thanks to nanotechnology processes with a high compatibility constraint with submicrometer light coupling solutions and microwave devices and circuits technologies. Modeling and design tools dedicated to photoconductive effect description at nanometer scale, for its implementation in passive and active components must be set up in order to exalt this effect for microwave signal processing functionalities such as switching, generation, amplification and emission over a large frequency bandwidth. This paper will report on latest demonstrations of high performance photoconductive switches for high frequency applications at 0.8μm and 1.5μm based on LT-GaAs, GaAs nanowires and GaInAsSb semiconductor materials.

  13. Highly efficient and electrically robust carbon irradiated semi-insulating GaAs based photoconductive terahertz emitters

    SciTech Connect

    Singh, Abhishek; Pal, Sanjoy; Surdi, Harshad; Prabhu, S. S. Nanal, Vandana; Pillay, R. G.

    2014-02-10

    We demonstrate here an efficient photoconductive THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters (PCEs) by two orders of magnitude. By irradiating the SI-GaAs substrate with Carbon-ions up to 2 μm deep, we have created lot of defects and decreased the lifetime of photo-excited carriers inside the substrate. Depending on the irradiation dose, we find 1 to 2 orders of magnitude decrease in total current flowing in the substrate, resulting in subsequent decrease of heat dissipation in the device. This has resulted in increasing maximum cut-off of the applied voltage across PCE electrodes to operate the device without thermal breakdown from ∼35 V to >150 V for the 25 μm electrode gaps. At optimum operating conditions, carbon irradiated (10{sup 14} ions/cm{sup 2}) PCEs give THz pulses with power about 100 times higher in comparison to the usual PCEs on SI-GaAs and electrical to THz power conversion efficiency has improved by a factor of ∼800.

  14. A bow-tie photoconductive antenna using a low-temperature-grown GaAs thin-film on a silicon substrate for terahertz wave generation and detection

    NASA Astrophysics Data System (ADS)

    Darío Velásquez Ríos, Rubén; Bikorimana, Siméon; Ummy, Muhammad Ali; Dorsinville, Roger; Seo, Sang-Woo

    2015-12-01

    This paper presents heterogeneously integrated bow-tie emitter-detector photoconductive antennas (PCAs) based on low-temperature grown-gallium arsenide (LTG-GaAs) thin-film devices on silicon-dioxide/silicon (SiO2/Si) host substrates for integrated terahertz (THz) systems. The LTG-GaAs thin-film devices are fabricated with standard photolithography and thermal evaporation of metal-contact layers of chromium (Cr), nickel (Ni) and gold (Au). They are etched selectively and separated from their growth GaAs substrate. The LTG-GaAs thin-film devices are then heterogeneously integrated on bow-tie antenna electrodes patterned on the surface of a SiO2/Si host substrate for THz emitters and THz detectors. Cost-effective and selective integration of LTG-GaAs thin-film devices on a Si platform is demonstrated. THz radiation from the fabricated THz PCAs is successfully measured using a pump-probe THz time-domain configuration. The THz temporal duration was measured at full width half maximum of 0.36 ps. Its frequency spectrum exhibits a broadband response with a peak resonant frequency of about 0.31 THz. The demonstration illustrates the feasibility of creating heterogeneously integrated THz systems using separately optimized LTG-GaAs devices and Si based electronics.

  15. Si(C≡C)4-Based Single-Crystalline Semiconductor: Diamond-like Superlight and Superflexible Wide-Bandgap Material for the UV Photoconductive Device.

    PubMed

    Sun, Ming-Jun; Cao, Xinrui; Cao, Zexing

    2016-07-01

    A wide-bandgap SiC4 semiconductor with low density and high elasticity has been designed and characterized by ab initio molecular dynamics simulations and first-principles calculations. The through-space conjugation among the d orbitals of Si and the π* orbitals of ethynyl moieties can remarkably enhance the photoconductivity. This new-type superlight and superflexible semiconductor is predicted to have unique electronic, optical, and mechanical properties, and it is a quite promising material for the high-performance UV optoelectronic devices suitable for various practical demands in a complex environment. PMID:27334253

  16. Photoconductivity of transparent perovskite oxide semiconductors BaSnO3 and SrTiO3 epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Park, Jisung; Kim, Useong; Char, Kookrin; Institute of Applied Physics, Department of Physics; Astronomy, Seoul National University, Seoul Team

    We have measured the photoconductivity (PC) of epitaxial thin films of transparent semiconductor BaSnO3 (BSO) and SrTiO3 (STO) at room temperature. The epitaxial thin films of BSO and STO were grown by pulsed laser ablation technique on the MgO substrates to exclude any conductance from the substrate owing to its large bandgap (~7.8 eV). Despite the same crystalline structure and similar band gap sizes (~3.2 eV), the PC of BSO behaved very differently. The slowly varying component in the PC of BSO is much larger than that of STO; the PC of BSO increased slowly, reached higher magnitude after the same duration of illumination, and persisted longer than many hours after the light was turned off, whereas the PC of STO showed little persistent conductivity. The spectral responses of the PC of BSO and STO showed their highest peaks below 400 nm when measured by a UV monochromator system, suggesting that the electron-hole pair generation is the main mechanism of the PC for both materials. The higher mobility of BSO should be partially responsible for the higher PC. The large persistent PC of BSO seems related to the dislocations that trap electrons easily.

  17. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    NASA Astrophysics Data System (ADS)

    Lin, H. C.; Ye, P. D.; Xuan, Y.; Lu, G.; Facchetti, A.; Marks, T. J.

    2006-10-01

    High-performance GaAs metal-insulator-semiconductor field-effect-transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5to16.5nm exhibit a gate leakage current density <10-5A/cm2 at a gate bias smaller than 3V, a maximum drain current of 370mA/mm at a forward gate bias of 2V, and a maximum intrinsic transconductance of 170mS/mm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

  18. Nonlinear transport of semi-insulating GaAs in a semiconductor gas discharge structure

    NASA Astrophysics Data System (ADS)

    Yücel Kurt, H.; Salamov, B. G.

    2007-12-01

    Nonlinear transport of a semi-insulating (SI) GaAs photodetector in a semiconductor gas discharge structure (SGDS) is studied experimentally for a wide range of gas pressures p, interelectrode distances d and different diameters D of the detector areas. While being driven with a stationary voltage, the system generates current and discharge light emission (DLE) instabilities with different amplitudes of the oscillations. The transformation of the profile and amplitude of the current density of the filaments in the different regions of the current-voltage characteristic (CVC) has been studied. Instabilities of spatially non-uniform distributions resulting in the formation of multiple current filaments with increasing voltages above the critical values have been observed. It is shown that the interelectrode distance only plays a passive role and is not responsible for the appearance of the DLE instability under the experimental conditions. At the same time, the expanded range of current and DLE oscillations are observed for different diameters D of the infrared (IR) photodetector areas. An SGDS with an N-shaped CVC is analysed using both the current and DLE data which show the electrical instability in the GaAs photodetector. It is found that the application of high feeding voltage to this photodetector gives rise to a non-uniform spatial distribution of the DLE, which disturbs the operation of the system. The experiment also presents a new method to study and visualize the electrical instabilities in a high-resistivity IR photodetector of large diameter.

  19. Removal of GaAs growth substrates from II-VI semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Bieker, S.; Hartmann, P. R.; Kießling, T.; Rüth, M.; Schumacher, C.; Gould, C.; Ossau, W.; Molenkamp, L. W.

    2014-04-01

    We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet etching and is generally applicable to any II-VI layer stack. We demonstrate the non-invasiveness of the method by transferring an all-II-VI magnetic resonant tunneling diode. High resolution x-ray diffraction proves that the crystal integrity of the heterostructure is preserved. Transport characterization confirms that the functionality of the device is maintained and even improved, which is ascribed to completely elastic strain relaxation of the tunnel barrier layer.

  20. Technology of GaAs metal-oxide-semiconductor solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M.

    1977-01-01

    The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

  1. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

    NASA Astrophysics Data System (ADS)

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-01

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ˜40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  2. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches.

    PubMed

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-01

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ~40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed. PMID:25273719

  3. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

    SciTech Connect

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-15

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ∼40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  4. Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

    NASA Technical Reports Server (NTRS)

    Kashkarov, P. K.; Kazior, T. E.; Lagowski, J.; Gatos, H. C.

    1983-01-01

    An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

  5. The reverse mode of the photo activated charge domain in high field biased semi-insulating GaAs

    NASA Astrophysics Data System (ADS)

    Qu, Guanghui; Shi, Wei

    2013-02-01

    The nonlinear accumulation of the photogenerated electrons in high field biased SI-GaAs has been defined as photo activated charge domain (PACD). The transient transport dynamics of the PACD is investigated. The result shows that the PACD, working as a reverse gun dipole domain when biased electric field much higher than 4 kV/cm, and the reverse mode of the PACD could dominate the electric field shielding by its main electric field ultrafast and exponential rising against the bias field. Such mechanisms could play an important role in GaAs THz antenna, GaAs photoconductive semiconductor switch, and the other ultrafast GaAs devices.

  6. Metal{endash}insulator{endash}semiconductor structure on GaAs using a pseudomorphic Si/GaP interlayer

    SciTech Connect

    Park, D.; Mohammad, S.N.; Chen, Z.; Morkoc, H.

    1997-03-01

    We report on a novel GaAs metal{endash}insulator{endash}semiconductor (MIS) structure exhibiting the interface state densities in the 9.2{times}10{sup 10} eV{sup {minus}1}cm{sup {minus}2} with a Si (10 {Angstrom})/GaP (12 {Angstrom}) layer on GaAs. The structure was grown by a combination of molecular beam epitaxy and chemical vapor deposition. The hysteresis and frequency dispersion of the MIS capacitor were lower than 100 mV, some of them as low as 70 mV under a field swing of about {plus_minus}1.4 MV/cm. {ital Ex situ} solid phase annealing around 500{endash}550{degree}C in N{sub 2} using rapid thermal annealing was high enough to recrystallize the as-deposited Si interlayer at low temperature ({approximately}300{degree}C). The 100 kHz frequency response at 77 K suggests that the interface pinning levels are close to the conduction band edge of GaAs. This article reports the first application of a pseudomorphic Si/GaP interlayer to ideal GaAs MIS diodes and exhibits a favorable interface stability with high temperature annealing. {copyright} {ital 1997 American Vacuum Society.}

  7. Low-temperature grown GaAs heterojunction metal-semiconductor-metal photodetectors improve speed and efficiency

    NASA Astrophysics Data System (ADS)

    Currie, Marc; Quaranta, Fabio; Cola, Adriano; Gallo, Eric M.; Nabet, Bahram

    2011-11-01

    Low-temperature-grown GaAs (LT-GaAs) has a picosecond recombination lifetime, making a fast photodetector material but limiting carrier mobility and collection efficiency. Here, a metal-semiconductor-metal photodetector with a thin channel of regular-temperature GaAs (RT-GaAs) above LT-GaAs provides fast transit between contacts. A p-type delta doping layer below these layers produces a vertical electric field forcing optically generated electrons towards the channel. The AlGaAs/RT-GaAs heterojunction increases Schottky contacts, and the resulting 8-22 μm pitch photodetectors have low (<1-nA) dark current, 12-ps (oscilloscope-limited) pulsewidth, and 0.15-A/W responsivity. The devices demonstrate that fast LT-GaAs pulses are achievable with responsivity similar to RT-GaAs.

  8. Analysis of aluminum nano-gratings assisted light reflection reduction in GaAs metal-semiconductor-metal photodetectors

    NASA Astrophysics Data System (ADS)

    Fan, Zhenzhu; Su, Yahui; Zhang, Huayong; Han, Xiaohu; Ren, Feifei

    2015-09-01

    Plasmonics-based GaAs metal-semiconductor-metal photodetector (MSM-PD) with aluminum nano-gratings was proposed. A detailed numerical study of subwavelength nanogratings behavior to reduce the light reflection is performed by finite-difference time domain (FDTD) algorithm. The geometric parameters of nano-gratings, such as aperture width, the nano-gratings height, the duty cycles are optimized for subwavelength metal nanogratings on GaAs substrate and their impact on light reflection below the conventional MSM-PD is confirmed. Simulation results show that a light reflection factor around 15% can be obtained near the wavelength of 900 nm with optimized MSM-PDs, and in visible light spectrum, the Al nano-gratings show better performance than Au nano-gratings.

  9. Photoconductive switching for high power microwave generation

    SciTech Connect

    Pocha, M.D.; Hofer, W.W.

    1990-10-01

    Photoconductive switching is a technology that is being increasingly applied to generation of high power microwaves. Two primary semiconductors used for these devices are silicon and gallium arsenide. Diamond is a promising future candidate material. This paper discusses the important material parameters and switching modes, critical issues for microwave generation, and future directions for this high power, photoconductive switching technology.

  10. Magneto-optical properties of semiconductor-based superlattices having GaAs with MnAs nanoclusters

    NASA Astrophysics Data System (ADS)

    Shimizu, H.; Tanaka, M.

    2001-06-01

    We have fabricated semiconductor-based magnetic superlattices (SLs) containing GaAs:MnAs granular material in which MnAs nanoclusters are embedded in GaAs, and have characterized their structural, optical, and magneto-optical properties. SLs consisting of GaAs:MnAs and AlAs are shown to have good crystalline quality and excellent compatibility with nonmagnetic GaAs/AlAs heterostructures. The optical transmission properties were improved in the SLs, while keeping the strong magneto-optical properties of GaAs:MnAs. We used these magnetic SLs in a semiconductor-based magnetic microcavity as the central magnetic layer, and its optical transmission was found to have improved compared with our previous multilayer structures.

  11. Magneto-optical properties of semiconductor-based superlattices having GaAs with MnAs nanoclusters

    SciTech Connect

    Shimizu, H.; Tanaka, M.

    2001-06-01

    We have fabricated semiconductor-based magnetic superlattices (SLs) containing GaAs:MnAs granular material in which MnAs nanoclusters are embedded in GaAs, and have characterized their structural, optical, and magneto-optical properties. SLs consisting of GaAs:MnAs and AlAs are shown to have good crystalline quality and excellent compatibility with nonmagnetic GaAs/AlAs heterostructures. The optical transmission properties were improved in the SLs, while keeping the strong magneto-optical properties of GaAs:MnAs. We used these magnetic SLs in a semiconductor-based magnetic microcavity as the central magnetic layer, and its optical transmission was found to have improved compared with our previous multilayer structures. {copyright} 2001 American Institute of Physics.

  12. First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN Semiconductors

    SciTech Connect

    Schulthess, Thomas C; Temmerman, Walter M; Szotek, Zdzislawa; Svane, Axel; Petit, Leon

    2007-01-01

    We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn-d levels in GaAs. We find good agreement between computed values and estimates from photoemisison experiments.

  13. Photoconductive circuit element reflectometer

    DOEpatents

    Rauscher, C.

    1987-12-07

    A photoconductive reflectometer for characterizing semiconductor devices at millimeter wavelength frequencies where a first photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short first laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test. Second PCEs are connected along the transmission line to sample the signals on the transmission line when excited into conductance by short second laser light pulses, spaced apart in time a determinable period from the first laser light pulses. Electronic filters connected to each of the second PCEs act as low-pass filters and remove parasitic interference from the sampled signals and output the sampled signals in the form of slowed-motion images of the signals on the transmission line. 4 figs.

  14. Photoconductive circuit element reflectometer

    DOEpatents

    Rauscher, Christen

    1990-01-01

    A photoconductive reflectometer for characterizing semiconductor devices at millimeter wavelength frequencies where a first photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short first laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test. Second PCEs are connected along the transmission line to sample the signals on the transmission line when excited into conductance by short second laser light pulses, spaced apart in time a variable period from the first laser light pulses. Electronic filters connected to each of the second PCEs act as low-pass filters and remove parasitic interference from the sampled signals and output the sampled signals in the form of slowed-motion images of the signals on the transmission line.

  15. Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO 2-GaAs metal-oxide-semiconductor devices

    NASA Astrophysics Data System (ADS)

    Kundu, Souvik; Shripathi, T.; Banerji, P.

    2011-12-01

    This work deals with the fabrication of a GaAs metal-oxide-semiconductor device with an unpinned interface environment. An ultrathin ( ˜2 nm) interface passivation layer (IPL) of ZnO on GaAs was grown by metal organic chemical vapor deposition to control the interface trap densities and to prevent the Fermi level pinning before high-k deposition. X-ray photoelectron spectroscopy and high resolution transmission electron microscopy results show that an ultra thin layer of ZnO IPL can effectively suppress the oxides formation and minimize the Fermi level pinning at the interface between the GaAs and ZrO 2. By incorporating ZnO IPL, GaAs MOS devices with improved capacitance-voltage and reduced gate leakage current were achieved. The charge trapping behavior of the ZrO 2/ZnO gate stack under constant voltage stressing exhibits an improved interface quality and high dielectric reliability.

  16. The contact and photoconductivity characteristics between Co doped amorphous carbon and GaAs: n-type low-resistivity and semi-insulated high-resistivity GaAs

    NASA Astrophysics Data System (ADS)

    Zhai, Zhangyin; Yu, Hualing; Zuo, Fen; Guo, Chunlian; Chen, Guibin; Zhang, Fengming; Wu, Xiaoshan; Gao, Ju

    2016-06-01

    The Co doped amorphous carbon films (a-C:Co), deposited by pulsed laser deposition, show p-n and ohmic contact characteristics with n-type low resistivity GaAs (L-GaAs) and semi-insulated high-resistivity GaAs (S-GaAs). The photosensitivity enhances for a-C:Co/L-GaAs, while inverse decreases for a-C:Co/S-GaAs heterojunction, respectively. Furthermore, the enhanced photosensitivity for the a-C:Co/L-GaAs/Ag heterojunction also shows deposition temperature dependence behavior, and the optimum deposition temperature is around 500 °C.

  17. Photoconductivity of Activated Carbon Fibers

    DOE R&D Accomplishments Database

    Kuriyama, K.; Dresselhaus, M. S.

    1990-08-01

    The photoconductivity is measured on a high-surface-area disordered carbon material, namely activated carbon fibers, to investigate their electronic properties. Measurements of decay time, recombination kinetics and temperature dependence of the photoconductivity generally reflect the electronic properties of a material. The material studied in this paper is a highly disordered carbon derived from a phenolic precursor, having a huge specific surface area of 1000--2000m{sup 2}/g. Our preliminary thermopower measurements suggest that this carbon material is a p-type semiconductor with an amorphous-like microstructure. The intrinsic electrical conductivity, on the order of 20S/cm at room temperature, increases with increasing temperature in the range 30--290K. In contrast with the intrinsic conductivity, the photoconductivity in vacuum decreases with increasing temperature. The recombination kinetics changes from a monomolecular process at room temperature to a biomolecular process at low temperatures. The observed decay time of the photoconductivity is {approx equal}0.3sec. The magnitude of the photoconductive signal was reduced by a factor of ten when the sample was exposed to air. The intrinsic carrier density and the activation energy for conduction are estimated to be {approx equal}10{sup 21}/cm{sup 3} and {approx equal}20meV, respectively. The majority of the induced photocarriers and of the intrinsic carriers are trapped, resulting in the long decay time of the photoconductivity and the positive temperature dependence of the conductivity.

  18. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Oe, Kunishige; Okamoto, Hiroshi

    1998-11-01

    A new semiconductor alloy material, GaAs1-xBix has been created by Metal Organic Vapor Phase Epitaxial (MOVPE) growth. A low growth temperature, such as 365°C, is required to obtain the alloy. X-ray diffraction measurements of alloy layers reveal that the diffraction patterns are satisfactory. The maximum GaBi content in the GaAsBi alloy estimated from the lattice constant is around 2%, which is consistent with that estimated from secondary ion mass spectroscopy (SIMS) measurements. In a photoluminescence (PL) measurement, a single peak spectrum is observed from 10 to 300 K. The temperature variation of the PL peak energy is as small as 0.1 meV/K.

  19. Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Han, Jaeheon

    2011-12-01

    Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.

  20. Graded Al sub x Ga sub 1-x as photoconductive devices for high efficiency picosecond optoelectronic switching

    SciTech Connect

    Morse, J.D.; Mariella, R.P. ); Dutton, R.W. . Center for Integrated Systems)

    1990-10-01

    Picosecond photoconductivity has been achieved for a variety of semiconductor materials by techniques which have now become almost standard. Enhanced scattering by the excessive amount of deep level defects which provide for picosecond recombination lifetimes significantly reduce the mobility, degrading the responsivity of the photoconductor. This paper will present a concept where improved responsivity is achievable by utilizing a graded bandgap Al{sub x}Ga{sub 1-x}As active detecting layer grown on a high defect density GaAs layer by molecular beam epitaxy (MBE). 7 refs., 6 figs.

  1. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect

    Sullivan, James S.

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  2. Structural and electronic properties of GaAs and GaP semiconductors

    SciTech Connect

    Rani, Anita; Kumar, Ranjan

    2015-05-15

    The Structural and Electronic properties of Zinc Blende phase of GaAs and GaP compounds are studied using self consistent SIESTA-code, pseudopotentials and Density Functional Theory (DFT) in Local Density Approximation (LDA). The Lattice Constant, Equillibrium Volume, Cohesive Energy per pair, Compressibility and Band Gap are calculated. The band gaps calcultated with DFT using LDA is smaller than the experimental values. The P-V data fitted to third order Birch Murnaghan equation of state provide the Bulk Modulus and its pressure derivatives. Our Structural and Electronic properties estimations are in agreement with available experimental and theoretical data.

  3. Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs1–xNx alloys: The appearance of a mobility edge

    DOE PAGESBeta

    Alberi, K.; Fluegel, B.; Beaton, D. A.; Ptak, A. J.; Mascarenhas, A.

    2012-07-09

    Electrons in semiconductor alloys have generally been described in terms of Bloch states that evolve from constructive interference of electron waves scattering from perfectly periodic potentials, despite the loss of structural periodicity that occurs on alloying. Using the semiconductor alloy GaAs₁₋xNx as a prototype, we demonstrate a localized to delocalized transition of the electronic states at a percolation threshold, the emergence of a mobility edge, and the onset of an abrupt perturbation to the host GaAs electronic structure, shedding light on the evolution of electronic structure in these abnormal alloys.

  4. Photoconductive circuit element pulse generator

    DOEpatents

    Rauscher, Christen

    1989-01-01

    A pulse generator for characterizing semiconductor devices at millimeter wavelength frequencies where a photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test.

  5. Effect of semiconductor GaAs laser irradiation on pain perception in mice

    SciTech Connect

    Zarkovic, N.; Manev, H.; Pericic, D.; Skala, K.; Jurin, M.; Persin, A.; Kubovic, M.

    1989-01-01

    The influence of subacute exposure (11 exposures within 16 days) of mice to the low power (GaAs) semiconductive laser-stimulated irradiation on pain perception was investigated. The pain perception was determined by the latency of foot-licking or jumping from the surface of a 53 degrees C hot plate. Repeated hot-plate testing resulted in shortening of latencies in both sham- and laser-irradiated mice. Laser treatment (wavelength, 905 nm; frequency, 256 Hz; irradiation time, 50 sec; pulse duration, 100 nsec; distance, 3 cm; peak irradiance, 50 W/cm2 in irradiated area; and total exposure, 0.41 mJ/cm2) induced further shortening of latencies, suggesting its stimulatory influence on pain perception. Administration of morphine (20 mg/kg) prolonged the latency of response to the hot plate in both sham- and laser-irradiated mice. This prolongation tended to be lesser in laser-irradiated animals. Further investigations are required to elucidate the mechanism of the observed effect of laser.

  6. Measurement and Modeling of OPNMR Phenomena in GaAs Semiconductors

    NASA Astrophysics Data System (ADS)

    Wheeler, Dustin D.

    Since its inception, nuclear magnetic resonance (NMR) has been a key technique for sample characterization. One significant limitation of NMR is an inherent lack of sensitivity, making it extremely difficult to probe systems with low spin densities (≤1017 nuclei). Optically pumped NMR (OPNMR) provides one method to get around this sensitivity barrier by utilizing the high electronic polarizations that can be generated through the application of polarized light. Semiconducting materials are the fundamental building blocks of important components in most aspects of modern society, including solar cells, optical detectors, and diodes and transistors in electronic circuits. Because of this prevalence, accurate and comprehensive characterization of a sample is necessary to gauge the ability of the sample to perform the necessary role. Extremely small concentrations of defects in a sample can have substantial effects on the performance of a device, so characterization techniques must have a high degree of sensitivity. OPNMR aims to provide a path to characterize these defects. Recent work in our lab has focused on probing the underlying mechanisms occurring in OPNMR, including the source of nuclear polarization and the nature of the hyperfine coupling that occurs between nuclear spins and nearby electrons. This dissertation examines the theory of optical pumping, polarization transfer, and experimental applications. Also included are observations of perturbations to the nutation and echo behavior of GaAs under optical pumping conditions.

  7. Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs

    NASA Astrophysics Data System (ADS)

    Deng, Hui-Xiong; Li, Jingbo; Li, Shu-Shen; Peng, Haowei; Xia, Jian-Bai; Wang, Lin-Wang; Wei, Su-Huai

    2010-11-01

    For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitution on As sites in GaAs, isovalent defect levels or defect bands are introduced. The evolution of the defect states as a function of the alloy concentration is usually described by the popular phenomenological band anticrossing (BAC) model. Using first-principles band-structure calculations we show that at the impurity limit the N- (Bi)-induced impurity level is above (below) the conduction- (valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs1-xNx becomes an N-derived state and the valence-band edge of GaAs1-xBix becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture.

  8. The friction behavior of semiconductors Si and GaAs in contact with pure metals

    NASA Technical Reports Server (NTRS)

    Mishina, H.

    1984-01-01

    The friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals was studied. Five transition and two nontransition metals, titanium, tantalum, nickel, palladium, platinum, copper, and silver, slid on a single crystal silicon (111) surface. Four metals, indium, nickel, copper and silver, slid on a single crystal gallium arsenide (100) surface. Experiments were conducted in room air and in a vacuum of 10 to the minus 7th power N/sq cm (10 to the minus 9th power torr). The results indicate that the sliding of silicon on the transition metals exhibits relatively higher friction than for the nontransition metals in contact with silicon. There is a clear correlation between friction and Schottky barrier height formed at the metal silicon interface for the transition metals. Transition metals with a higher barrier height on silicon had a lower friction. The same effect of barrier height was found for the friction of gallium arsenide in contact with metals.

  9. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect

    Sullivan, James S.

    2013-07-03

    Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

  10. Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    NASA Astrophysics Data System (ADS)

    Lin, H. C.; Kim, S. K.; Chang, D.; Xuan, Y.; Mohammadi, S.; Ye, P. D.; Lu, G.; Facchetti, A.; Marks, T. J.

    2007-08-01

    Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) with very thin self-assembled organic nanodielectrics (SANDs) are presented. The application of SAND on compound semiconductors offers unique opportunities for high-performance devices. Thus, 1μm gate-length depletion-mode n-channel SAND/GaAs MISFETs exhibit low gate leakage current densities of 10-2-10-5A/cm2, a maximum drain current of 260mA/mm at 2V forward gate bias, and a maximum intrinsic transconductance of 127mS/mm. These devices achieve a current cutoff frequency (fT) of 10.6GHz and a maximum oscillation frequency (fmax) of 6.9GHz. Nearly hysteresis-free Ids-Vgs characteristics and low flicker noise indicate that a high-quality SAND-GaAs interface is achieved.

  11. Analysis of DC Characteristics and Small Signal Equivalent Circuit Parameters of GaAs Metal-Semiconductor Field Effect Transistors with Different Gate Lengths and Different Gate Contours by Two-Dimensional Device Simulations

    NASA Astrophysics Data System (ADS)

    Meng, C. C.; Su, J. Y.; Yang, S. M.

    2005-09-01

    The gate length and gate contour of a GaAs metal-semiconductor field effect transistor (MESFET) device play important roles in determining the small signal circuit parameters and large signal breakdown voltage behavior. GaAs MESFETs with different gate lengths and gate contours were studied by the two-dimensional (2-D) semiconductor device simulations to investigate the dependence of small signal circuit parameters and breakdown voltage on gate length and gate contour. The results show that gate length affects small-signal circuit parameter Cgs while gate contour affects Cgd. The breakdown voltage has strong dependence on gate contour and little dependence on gate length.

  12. Growth and Properties of the Dilute Bismide Semiconductor GaAs1-xBix a Complementary Alloy to the Dilute Nitrides

    SciTech Connect

    Tiedje, T.; Young, E. C.; Mascarenhas, A.

    2008-01-01

    In this review we describe the growth and properties of the dilute bismide semiconductor alloy GaAs{sub 1-x}Bi{sub x} and show how its properties are in certain respects complementary to the dilute nitride alloy, GaN{sub y}As{sub 1-y}. Like the dilute nitrides the dilute bismides show a giant band gap bowing effect in which a small concentration of the alloying element has a disproportionate effect on the band gap, however in the case of the bismide the band gap reduction is associated with an increase in the energy of the valence band maximum (VBM) rather than a reduction in the energy of the conduction band minimum (CBM). Under standard GaAs growth conditions Bi acts as a surfactant with associated improvements in surface quality. In order to incorporate Bi, growth temperatures below 400 C are used with As{sub 2}/Ga flux ratios close to unity. The electron mobility of GaAs is only weakly affected by Bi alloying, in contrast to the dilute nitrides where the electron mobility decreases rapidly with N alloying. Bi alloying also produces a giant bowing effect in the spin orbit splitting in the valence band. Strong room temperature photoluminescence is observed. Prospects for future device applications of this new compound semiconductor alloy are discussed.

  13. Characterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode

    PubMed Central

    Tan, Shih-Wei; Lai, Shih-Wen

    2012-01-01

    Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO2 and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φb) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the current transport for Pd-MSM diodes in the consideration of the carrier over the metal-semiconductor barrier. In addition, in the consideration of the carrier over both the metal-semiconductor barrier and the insulator-semiconductor barrier simultaneously, thus the thermionic-emission process can be used to describe well the current transport for M-MSM diodes. Furthermore, in the higher applied voltage, the carrier recombination will be taken into discussion. Besides, a composite-current (CC) model is developed to evidence the concepts. Our calculated results are in good agreement with the experimental ones. PMID:23226352

  14. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    NASA Astrophysics Data System (ADS)

    Islam, Sk Masiul; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.; Mukherjee, Rabibrata

    2015-06-01

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO2 and ZrO2, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×1011 cm-2, respectively. The device with a structure Metal/ZrO2/InAs QDs/HfO2/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10-6 A/cm2 and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO2 deposition.

  15. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    SciTech Connect

    Islam, Sk Masiul Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  16. Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

    SciTech Connect

    Liu, L. N.; Choi, H. W.; Lai, P. T.; Xu, J. P.

    2015-11-23

    GaAs metal-oxide-semiconductor capacitor with TaYON/LaTaON gate-oxide stack and fluorine-plasma treatment is fabricated and compared with its counterparts without the LaTaON passivation interlayer or the fluorine treatment. Experimental results show that the sample exhibits better characteristics: low interface-state density (8 × 10{sup 11 }cm{sup −2}/eV), small flatband voltage (0.69 V), good capacitance-voltage behavior, small frequency dispersion, and small gate leakage current (6.35 × 10{sup −6} A/cm{sup 2} at V{sub fb} + 1 V). These should be attributed to the suppressed growth of unstable Ga and As oxides on the GaAs surface during gate-oxide annealing by the LaTaON interlayer and fluorine incorporation, and the passivating effects of fluorine atoms on the acceptor-like interface and near-interface traps.

  17. Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas

    SciTech Connect

    Ren, F.; Lee, J.W.; Abernathy, C.R.; Pearton, S.J.; Constantine, C.; Barratt, C.; Shul, R.J.

    1997-07-01

    The effects of Ar plasma exposure on transconductance, channel sheet resistance, output resistance, and gate contact ideality factor of GaAs metal-semiconductor field-effect transistors (MESFETs) were investigated using two different high-density plasma sources, namely inductively coupled plasma and electron resonance plasma. Ion-induced damage is found to be reduced at moderate source powers ({approximately}200W) because of the reduction in cathode dc self-bias and hence ion energy, but at higher source powers the increase in ion flux produces significant deterioration of the device performance. Careful attention must be paid to both ion flux and ion energy in order to minimize ion-induced damage. Due to their relatively low channel doping levels, MESFETs are found to be more sensitive to plasma damage than devices with very heavily doped component layers such as heterojunction bipolar transistors. {copyright} {ital 1997 American Vacuum Society.}

  18. Effect of chemical surface treatments on non-native (Bi/sub 2/O/sub 3/) GaAs metal-insulator-semiconductor solar cells

    SciTech Connect

    Wang, E.Y.; Pandelisev, K.A.

    1981-07-01

    GaAs metal-insulator-semiconductor solar cells with a physically deposited Bi/sub 2/O/sub 3/ interfacial layer have been investigated. The deposition techniques used in the study were electron beam and boat thermal evaporation. The cells fabricated with interfacial layers of Bi/sub 2/O/sub 3/ showed a substantial improvement in open-circuit voltage over cells made without the physically deposited oxide layer. An etch has been used which yields an irregular ''textured'' surface. Cells employing this surface had a higher short-circuit current than those made with smooth, polished surfaces. The open-circuit voltages of these textured cells were lower than those with smooth surfaces. Calculations of the dependence of open-circuit voltage on pinhole density are in agreement with these results since a rough surface has a greater probability of pinholes.

  19. Transient Photoconduction in Phthalocyanines

    NASA Astrophysics Data System (ADS)

    Petty, David Matthew

    1991-02-01

    Available from UMI in association with The British Library. Requires signed TDF. Photoconduction occurs when illumination interacts with a sample to cause a change in the flow of current through that sample. The work described in this thesis is centred on the investigation of the processes which effect photoconduction. These processes include the way in which charge carriers move the electrodes, the way in which charge carriers transit the bulk and the way in which charge carriers are excited and relax. The thesis is divided into three parts. Part I is essentially a literature survey of the theories which describe photoconduction. An overview of photoconduction at a microscopic level in all types of sample is given. By categorising the sample as neutral or supporting a single carrier space charge, the mathematical description of photoconduction behaviour can be simplified. In Part II existing theories which describe photoconduction in charged samples are reviewed. A new theory yields two important equations: (i) the Plasma equation which describes the conditions for a neutral sample and those for a single carrier space charge, (ii) the BUIC (Bulk Uniform Injected Charge) equation which describes the time and field dependence of a photoconductor which supports a single carrier space charge. The BUIC equation is compared with existing theories and its ability to describe photoconduction in sandwich cells of phthalocyanine compounds is discussed. Part III contains an investigation of photoconduction in phthalocyanines. Steady state and chopped light transient photoconduction experiments are carried out on nine different Phthalocyanine compounds under a variety of conditions. The results obtained are interpreted using the BUIC, Plasma equations and neutral photoconductor theories.

  20. Wide Bandgap Extrinsic Photoconductive Switches

    NASA Astrophysics Data System (ADS)

    Sullivan, James Stephen

    Wide Bandgap Extrinsic Photoconductive Switches Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6H-SiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators. The successful development of a vanadium compensated, 6H-SiC extrinsic photoconductive switch for use as a closing switch for compact accelerator applications was realized by improvements made to the vanadium, nitrogen and boron impurity densities. The changes made to the impurity densities were based on the physical intuition outlined and simple rate equation models. The final 6H-SiC impurity 'recipe' calls for vanadium, nitrogen and boron densities of 2.5 e17 cm-3, 1.25e17 cm-3 and ≤ 1e16 cm-3, respectively. This recipe was originally developed to maximize the quantum efficiency of the vanadium compensated 6H-SiC, while maintaining a thermally stable semi-insulating material. The rate equation models indicate that, besides increasing the quantum efficiency, the impurity recipe should be expected to also increase the carrier recombination time. Three generations of 6H-SiC materials were tested. The

  1. Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Aoki, T.; Fukuhara, N.; Osada, T.; Sazawa, H.; Hata, M.; Inoue, T.

    2014-07-01

    Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al2O3. This AlN passivation incorporated nitrogen at the Al2O3/GaAs interface, improving the capacitance-voltage (C-V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C-V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (Dit). The Dit was reduced over the entire GaAs band gap. In particular, these devices exhibited Dit around the midgap of less than 4 × 1012 cm-2eV-1, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

  2. Quantum-dot based ultrafast photoconductive antennae for efficient THz radiation

    NASA Astrophysics Data System (ADS)

    Gorodetsky, Andrei; Bazieva, Natalia; Rafailov, Edik U.

    2016-03-01

    Here we overview our work on quantum dot based THz photoconductive antennae, capable of being pumped at very high optical intensities of higher than 1W optical mean power, i.e. about 50 times higher than the conventional LT-GaAs based antennae. Apart from high thermal tolerance, defect-free GaAs crystal layers in an InAs:GaAs quantum dot structure allow high carrier mobility and ultra-short photo carrier lifetimes simultaneously. Thus, they combine the advantages and lacking the disadvantages of GaAs and LT-GaAs, which are the most popular materials so far, and thus can be used for both CW and pulsed THz generation. By changing quantum dot size, composition, density of dots and number of quantum dot layers, the optoelectronic properties of the overall structure can be set over a reasonable range-compact semiconductor pump lasers that operate at wavelengths in the region of 1.0 μm to 1.3 μm can be used. InAs:GaAs quantum dot-based antennae samples show no saturation in pulsed THz generation for all average pump powers up to 1W focused into 30 μm spot. Generated THz power is super-linearly proportional to laser pump power. The generated THz spectrum depends on antenna design and can cover from 150 GHz up to 1.5 THz.

  3. Temperature and illumination intensity dependence of photoconductivity in sputter-deposited heteroepitaxial (100)CdTe layers

    NASA Astrophysics Data System (ADS)

    Das, S. R.; Cook, J. G.; Mukherjee, G.

    1991-06-01

    The photoconductivity behavior and the Hall-effect of sputter-deposited heteroepitaxial (100)CdTe layers grown at temperatures between 300 and 325 C were investigated. The (100)CdTe epilayers were found to be highly photoconductive and exhibited photoconductivity/dark conductivity ratios as high as 1 x 10 to the 6th at around 200 K. Photoconductivity showed a sublinear dependence on the illumination intensity and was higher at higher temperatures. It is shown that the model of Simmons and Taylor (1974) developed to explain photoconductivity in amorphous semiconductors is also applicable to the (100)CdTe epitaxial layers.

  4. Photoconductive switch enhancements for use in Blumlein pulse generators

    SciTech Connect

    Davanloo, F.; Park, H.; Collins, C. B.; Agee, F. J.

    1999-06-10

    Stacked Blumlein pulse generators developed at the University of Texas at Dallas have produced high-power waveforms with risetimes and repetition rates in the range of 0.2-50 ns and 1-300 Hz, respectively, using a conventional thyratron, spark gap or photoconductive switch. Adaptation of the design has enabled the stacked Blumleins to produce 80 MW, nanosecond pulses with risetimes better than 200 ps into nominally matched loads. The device has a compact line geometry and is commutated by a single GaAs photoconductive switch triggered by a low power laser diode array. Our current investigations involve the switch characteristics that affect the broadening of the current channels in the avalanche, pre-avalanche seedings, the switch lifetime and the durability. This report presents the progress toward improving the GaAs switch operation and lifetime in stacked Blumlein pulsers. Advanced switch treatments including diamond film overcoating are implemented and discussed.

  5. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  6. GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots

    NASA Astrophysics Data System (ADS)

    Kundu, Souvik; Rao Gollu, Sankara; Sharma, Ramakant; Halder, Nripendra. N.; Biswas, Pranab; Banerji, P.; Gupta, D.

    2013-08-01

    Ultrathin InP passivated GaAs non-volatile memory devices were fabricated with chemically synthesized 5 nm ZnO quantum dots embedded into ZrO2 high-k oxide matrix deposited through metal organic chemical vapor deposition. In these memory devices, the memory window was found to be 6.10 V and the obtained charge loss was only 15.20% after 105 s. The superior retention characteristics and a wide memory window are achieved due to presence of ZnO quantum dots between tunneling and control oxide layers. Room temperature Coulomb blockade effect was found in these devices and it was ascertained to be the main reason for low leakage. Electronic band diagram with program and erase operations were described on the basis of electrical characterizations.

  7. Photoconductivity in Dirac materials

    SciTech Connect

    Shao, J. M.; Yang, G. W.

    2015-11-15

    Two-dimensional (2D) Dirac materials including graphene and the surface of a three-dimensional (3D) topological insulator, and 3D Dirac materials including 3D Dirac semimetal and Weyl semimetal have attracted great attention due to their linear Dirac nodes and exotic properties. Here, we use the Fermi’s golden rule and Boltzmann equation within the relaxation time approximation to study and compare the photoconductivity of Dirac materials under different far- or mid-infrared irradiation. Theoretical results show that the photoconductivity exhibits the anisotropic property under the polarized irradiation, but the anisotropic strength is different between 2D and 3D Dirac materials. The photoconductivity depends strongly on the relaxation time for different scattering mechanism, just like the dark conductivity.

  8. Study on the high-power semi-insulating GaAs PCSS with quantum well structure

    NASA Astrophysics Data System (ADS)

    Luan, Chongbiao; Wang, Bo; Huang, Yupeng; Li, Xiqin; Li, Hongtao; Xiao, Jinshui

    2016-05-01

    A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity of the AlGaAs/GaAs PCSS was larger than 106 shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.

  9. Theoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Dib, Elias; Bescond, Marc; Cavassilas, Nicolas; Michelini, Fabienne; Raymond, Laurent; Lannoo, Michel

    2013-08-01

    Based on a self-consistent multi-band quantum transport code including hole-phonon scattering, we compare current characteristics of Si, Ge, and GaAs p-type double-gate transistors. Electronic properties are analyzed as a function of (i) transport orientation, (ii) channel material, and (iii) gate length. We first show that ⟨100⟩-oriented devices offer better characteristics than their ⟨110⟩-counterparts independently of the material choice. Our results also point out that the weaker impact of scattering in Ge produces better electrical performances in long devices, while the moderate tunneling effect makes Si more advantageous in ultimately scaled transistors. Moreover, GaAs-based devices are less advantageous for shorter lengths and do not offer a high enough ON current for longer gate lengths. According to our simulations, the performance switching between Si and Ge occurs for a gate length of 12 nm. The conclusions of the study invite then to consider ⟨100⟩-oriented double-gate devices with Si for gate length shorter than 12 nm and Ge otherwise.

  10. Photoconductive switch package

    DOEpatents

    Ca[rasp, George J

    2013-10-22

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  11. Photoconductive switch package

    SciTech Connect

    Caporaso, George J.

    2015-10-27

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  12. Current Sharing Among Multiple Lock-On Filaments in GaAs

    NASA Astrophysics Data System (ADS)

    Hjalmarson, H. P.; Loubriel, G. M.; Zutavern, F. J.

    1998-03-01

    Optically-triggered, high-power photoconductive semiconductor switches (PCSS's) using semi-insulating GaAs are under development at Sandia. These switches carry current in high carrier-density filaments. A major problem is the increased electrode damage in high power applications. One method we use to increase switch longevity is to trigger multiple filaments which share the current. For this talk, a hydrodynamic implementation of the collective impact ionization theory is used to evaluate and refine this method. To be specific, the current-voltage characteristic for two filaments is compared with that for a single filament. An important issue is the interaction of the two filaments as a function of their distance separation.

  13. Experiments on Photoconductivity

    ERIC Educational Resources Information Center

    Kraftmakher, Yaakov

    2012-01-01

    Computer-assisted experiments with CdS and CdSe photoresistors are described. The most important characteristics of the photoresistors are determined: (i) the spectral response, (ii) the photocurrent versus incident radiant power, (iii) the rise and decay time constants and (iv) the frequency response to modulated light. The photoconductivity gain…

  14. Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

    SciTech Connect

    ISLAM,N.E.; SCHAMILOGLU,E.; MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; JOSHI,R.P.

    2000-05-30

    The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of {approximately} 10{sup 4} shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10{sup 8} shots for electro-optic drivers. Much effort is currently

  15. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system

    NASA Astrophysics Data System (ADS)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-01

    This paper presents a compressive study on the fabrication and optimization of GaAs metal-oxide-semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal-organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance-voltage (C-V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm-2 eV-1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  16. Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

    NASA Astrophysics Data System (ADS)

    Wang, L. S.; Xu, J. P.; Zhu, S. Y.; Huang, Y.; Lai, P. T.

    2013-08-01

    The interfacial and electrical properties of sputtered HfTiON on sulfur-passivated GaAs with or without TaON as interfacial passivation layer (IPL) are investigated. Experimental results show that the GaAs metal-oxide-semiconductor capacitor with HfTiON/TaON stacked gate dielectric annealed at 600 °C exhibits low interface-state density (1.0 × 1012 cm-2 eV-1), small gate leakage current (7.3 × 10-5 A cm-2 at Vg = Vfb + 1 V), small capacitance equivalent thickness (1.65 nm), and large equivalent dielectric constant (26.2). The involved mechanisms lie in the fact that the TaON IPL can effectively block the diffusions of Hf, Ti, and O towards GaAs surface and suppress the formation of interfacial As-As bonds, Ga-/As-oxides, thus unpinning the Femi level at the TaON/GaAs interface and improving the interface quality and electrical properties of the device.

  17. Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

    SciTech Connect

    Aoki, T. Fukuhara, N.; Osada, T.; Sazawa, H.; Hata, M.; Inoue, T.

    2014-07-21

    Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap of less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

  18. Photorefractive Semiconductors and Applications

    NASA Technical Reports Server (NTRS)

    Chen, Li-Jen; Luke, Keung L.

    1993-01-01

    Photorefractive semiconductors are attractive for information processing, becuase of fast material response, compatibility with semiconductor lasers, and availability of cross polarization diffraction for enhancing signal-to-noise ration. This paper presents recent experimental results on information processing using photorefractive GaAs, InP and CdTe, including image processing with semiconductor lasers.

  19. Paradoxes of photoconductive target and optical control of secondary ion yield

    SciTech Connect

    Rokakh, A. G. Matasov, M. D.

    2010-01-15

    This study of the photoconductivity of semiconductors, in particular, cadmium chalcogenides as materials for targets of vacuum image converters followed the path of overcoming paradoxes. The concepts developed by the classics of photoelectricity also help to understand the paradoxes of the new secondary-ion photoelectric effect, especially, its spectral characteristic. The optical channel of secondary ion yield control via a photoconductive target opens the way to a new branch of nanotechnology, i.e., optoionics.

  20. Coherent and incoherent terahertz beams measured from a terahertz photoconductive antenna

    SciTech Connect

    Ho Wu, Dong; Graber, Benjamin; Kim, Christopher; Qadri, S. B.; Garzarella, Anthony

    2014-02-03

    We have systematically measured and analyzed the terahertz beams of a photoconductive antenna fabricated on a GaAs substrate. Our data indicate that the antenna produces both coherent and incoherent terahertz beams. The former is produced largely by the plasmon, and the latter is believed to be due to the black body radiation resulting from the thermal excitations and Joule heating by both the femto-second laser and the bias voltage, applied across the electrodes of the antenna. The terahertz-beam property is greatly affected by the operating condition of the photoconductive antenna.

  1. Fast Photoconductive Responses in Organometal Halide Perovskite Photodetectors.

    PubMed

    Wang, Fei; Mei, Jingjing; Wang, Yunpeng; Zhang, Ligong; Zhao, Haifeng; Zhao, Dongxu

    2016-02-01

    Inorganic semiconductor-based photodetectors have been suffering from slow response speeds, which are caused by the persistent photoconductivity of semiconductor materials. For realizing high speed optoelectronic devices, the organometal halide perovskite thin films were applied onto the interdigitated (IDT) patterned Au electrodes, and symmetrical structured photoconductive detectors were achieved. The detectors were sensitive to the incident light signals, and the photocurrents of the devices were 2-3 orders of magnitude higher than dark currents. The responsivities of the devices could reach up to 55 mA W(1-). Most importantly, the detectors have a fast response time of less than 20 μs. The light and bias induced dipole rearrangement in organometal perovskite thin films has resulted in the instability of photocurrents, and Ag nanowires could quicken the process of dipole alignment and stabilize the photocurrents of the devices. PMID:26796674

  2. Photoconductivity of CdS under high pressure

    NASA Astrophysics Data System (ADS)

    Savić, Pavle; Urošević, Vladeta

    1987-04-01

    The photoconductivity of the high-pressure (rocksalt) phase of CdS has been investigated over the 30-120 kbar pressure range. A decrease of the photo-threshold from 1.60 eV (at 30 kbar) to 1.49 eV (at 120 kbar) indicates an indirect gap semiconductor. The values obtained have been compared with the Savić-Kašanin theory.

  3. Properties of high gain GaAs switches for pulsed power applications

    SciTech Connect

    Zutavern, F.J.; Loubriel, G.M.; Hjalmarson, H.P.; Mar, A.; Helgeson, W.D.; O`Malley, M.W.; Ruebush, M.H.; Falk, R.A.

    1997-09-01

    High gain GaAs photoconductive semiconductor switches (PCSS) are being used in a variety of electrical and optical short pulse applications. The highest power application, which the authors are developing, is a compact, repetitive, short pulse linear induction accelerator. The array of PCSS, which drive the accelerator, will switch 75 kA and 250 kV in 30 ns long pulses at 50 Hz. The accelerator will produce a 700 kV, 7kA electron beam for industrial and military applications. In the low power regime, these switches are being used to switch 400 A and 5 kV to drive laser diode arrays which produce 100 ps optical pulses. These short optical pulses are for military and commercial applications in optical and electrical range sensing, 3D laser radar, and high speed imaging. Both types of these applications demand a better understanding of the switch properties to increase switch lifetime, reduce jitter, optimize optical triggering, and improve overall switch performance. These applications and experiments on the fundamental behavior of high gain GaAs switches will be discussed. Open shutter, infra-red images and time-resolved images of the current filaments, which form during high gain switching, will be presented. Results from optical triggering experiments to produce multiple, diffuse filaments for high current repetitive switching will be described.

  4. Triggering GaAs lock-on switches with laser diode arrays

    SciTech Connect

    Loubriel, G.M.; Buttram, M.T.; Helgeson, W.D.; McLaughlin, D.L.; O'Malley, M.W.; Zutavern, F.J. ); Rosen, A.; Stabile, P.J. )

    1990-01-01

    Laser diode arrays have been used to trigger GaAs Photoconducting Semiconductor Switches (PCSS) charged to voltages of up to 60 kV and conducting currents of 580 A. The driving forces behind the use of laser diode arrays are compactness, elimination of complicated optics, and the ability to run at high repetition rates. Laser diode arrays are compactness, elimination of complicated optics, and the ability to run at high repetition rates. Laser diode arrays can trigger GaAs at high fields as the result of a new switching mode (lock-on) with very high carrier number gain. We have achieved switching of up to 10 MW in a 60 {Omega} system, with a pulse rise time of 500 ps. At 1.2 MW we have achieved repetition rates of 1 kHz with switch rise time of 500 ps for 10{sup 5} shots. The laser diode array used for these experiments delivers a 166 W pulse. In a single shot mode we have switched 4 kA with a flash lamp pumped laser and 600 A with the 166 W array. 7 refs., 5 figs.

  5. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80 K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83 eV to 1.0 eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  6. Electric field distribution characteristics of photoconductive antennas

    NASA Astrophysics Data System (ADS)

    Zou, Sheng-Wu; Zhang, Tong-Yi

    2012-10-01

    Photoexcitation of biased semiconductor photoconductive antennas by femtosecond pulses is the most common and convenient technique for generating strong terahertz (THz) pulses. In this paper, we use the three-dimensional (3D) finite-difference-time-domain (FDTD) to analyze electric field distribution of THz pulses in the near-field from a photoconductive antenna. The simulation is based on solving Maxwell's equations and the carrier rate equations simultaneously on realistic dipole antenna structures. The 3D FDTD simulation gives detailed features of THz electric field distribution in and out of the antenna. It is found that the difference of near-field distribution between the substrate and free space is considerably large. The fields of the alternating-current dipole exhibit an unsymmetrical distribution and a large deviation from those calculated using the simple Hertzian dipole theory. The magnitude of THz field in and out of the substrate attenuates rapidly while it holds the line in the gap center. The high-frequency components of THz radiation emission come only from the dipole antenna, while the low-frequency components are from both the center electrodes and coplanar stripline waveguide. This work can be used to optimize the design of antenna geometry and raise the radiation field power.

  7. Photoconductive detectors with fast temporal response for laser produced plasma experiments

    SciTech Connect

    May, M. J.; Halvorson, C.; Perry, T.; Weber, F.; Young, P.; Silbernagel, C.

    2008-10-15

    Processes during laser plasma experiments typically have time scales that are less than 100 ps. The measurement of these processes requires x-ray detectors with fast temporal resolution. We have measured the temporal responses and linearity of several different x-ray sensitive photoconductive detectors (PCDs). The active elements of the detectors investigated include both diamond (natural and synthetic) and GaAs crystals. The typical time responses of the GaAs PCDs are approximately 60 ps, respectively. Some characterizations using x-ray radiation from a synchrotron radiation source are presented.

  8. Photoconductive Detectors with Fast Temporal Response for Laser Produced Plasma Experiments.

    SciTech Connect

    May, M; Halvorson, C; Perry, T; Weber, F; Young, P; Silbernagel, C

    2008-05-06

    Processes during laser plasma experiments typically have time scales that are less than 100 ps. The measurement of these processes requires X-ray detectors with fast temporal resolution. We have measured the temporal responses and linearity of several different X-ray sensitive Photoconductive Detectors (PCDs). The active elements of the detectors investigated include both diamond (natural and synthetic) and GaAs crystals. The typical time responses of the GaAs PCDs are approximately 60 ps, respectively. Some characterizations using X-ray light from a synchrotron light source are presented.

  9. Photoconductive Detectors with Fast Temporal Response for Laser Produced Plasma Experiments

    SciTech Connect

    M. J. May, C. Halvorson, T. Perry, F. Weber, P. Young, C. Silbernagel

    2008-06-01

    Processes during laser plasma experiments typically have time scales that are less than 100 ps. The measurement of these processes requires X-ray detectors with fast temporal resolution. We have measured the temporal responses and linearity of several different Xray sensitive Photoconductive Detectors (PCDs). The active elements of the detectors investigated include both diamond (natural and synthetic) and GaAs crystals. The typical time responses of the GaAs PCDs are approximately 60 ps, respectively. Some characterizations using X-ray light from a synchrotron light source are presented.

  10. Photoconductive detectors with fast temporal response for laser produced plasma experiments.

    PubMed

    May, M J; Halvorson, C; Perry, T; Weber, F; Young, P; Silbernagel, C

    2008-10-01

    Processes during laser plasma experiments typically have time scales that are less than 100 ps. The measurement of these processes requires x-ray detectors with fast temporal resolution. We have measured the temporal responses and linearity of several different x-ray sensitive photoconductive detectors (PCDs). The active elements of the detectors investigated include both diamond (natural and synthetic) and GaAs crystals. The typical time responses of the GaAs PCDs are approximately 60 ps, respectively. Some characterizations using x-ray radiation from a synchrotron radiation source are presented. PMID:19044466

  11. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  12. Molecular self-assembly at bare semiconductor surfaces: preparation and characterization of highly organized octadecanethiolate monolayers on GaAs(001).

    PubMed

    McGuiness, Christine L; Shaporenko, Andrey; Mars, Carole K; Uppili, Sundararajan; Zharnikov, Michael; Allara, David L

    2006-04-19

    Through rigorous control of preparation conditions, organized monolayers with a highly reproducible structure can be formed by solution self-assembly of octadecanethiol on GaAs (001) at ambient temperature. A combination of characterization probes reveal a structure with conformationally ordered alkyl chains tilted on average at 14 +/- 1 degrees from the surface normal with a 43 +/- 5 degrees twist, a highly oleophobic and hydrophobic ambient surface, and direct S-GaAs attachment. Analysis of the tilt angle and film thickness data shows a significant mismatch of the average adsorbate molecule spacings with the spacings of an intrinsic GaAs(001) surface lattice. The monolayers are stable up to approximately 100 degrees C and exhibit an overall thermal stability which is lower than that of the same monolayers on Au[111] surfaces. A two-step solution assembly process is observed: rapid adsorption of molecules over the first several hours to form disordered structures with molecules lying close to the substrate surface, followed by a slow densification and asymptotic approach to final ordering. This process, while similar to the assembly of alkanethiols on Au[111], is nearly 2 orders of magnitude slower. Finally, despite differences in assembly rates and the thermal stability, exchange experiments with isotopically tagged molecules show that the octadecanethiol on GaAs(001) monolayers undergo exchange with solute thiol molecules at roughly the same rate as the corresponding exchanges of the same monolayers on Au[111]. PMID:16608359

  13. InP:Fe photoconducting device

    DOEpatents

    Hammond, R.B.; Paulter, N.G.; Wagner, R.S.

    A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

  14. Simulations of terahertz pulse emission from thin-film semiconductor structures

    NASA Astrophysics Data System (ADS)

    Semichaevsky, Andrey

    The photo-Dember effect is the formation of transient electric dipoles due to the interaction of semiconductors with ultrashort optical pulses. Typically the optically-induced dipole moments vary on the ns- or ps- scales, leading to the emission of electromagnetic pulses with terahertz (THz) bandwidths. One of the applications of the photo-Dember effect is a photoconductive dipole antenna (PDA). This work presents a computational model of a PDA based on Maxwell's equations coupled to the Boltzmann transport equation. The latter is solved semiclassically for the doped GaAs using a continuum approach. The emphasis is on the accurate prediction of the emitted THz pulse shape and bandwidth, particularly when materials are doped with a rare-earth metal such as erbium or terbium that serve as carrier recombination centers. Field-dependent carrier mobility is determined from particle-based simulations. Some of the previous experimental results are used as a basis for comparison with our model.

  15. Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path

    DOEpatents

    Nelson, Scott D.

    2016-05-10

    A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or apertures at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate, so as to geometrically constrain the conductivity path to within the triple junction region.

  16. Strain-induced photoconductivity in thin films of Co doped amorphous carbon.

    PubMed

    Jiang, Y C; Gao, J

    2014-01-01

    Traditionally, strain effect was mainly considered in the materials with periodic lattice structure, and was thought to be very weak in amorphous semiconductors. Here, we investigate the effects of strain in films of cobalt-doped amorphous carbon (Co-C) grown on 0.7PbMg(1/3)Nb(2/3)O3-0.3PbTiO3 (PMN-PT) substrates. The electric transport properties of the Co-C films were effectively modulated by the piezoelectric substrates. Moreover, we observed, for the first time, strain-induced photoconductivity in such an amorphous semiconductor. Without strain, no photoconductivity was observed. When subjected to strain, the Co-C films exhibited significant photoconductivity under illumination by a 532-nm monochromatic light. A strain-modified photoconductivity theory was developed to elucidate the possible mechanism of this remarkable phenomenon. The good agreement between the theoretical and experimental results indicates that strain-induced photoconductivity may derive from modulation of the band structure via the strain effect. PMID:25338641

  17. Strain-induced photoconductivity in thin films of Co doped amorphous carbon

    PubMed Central

    Jiang, Y. C.; Gao, J.

    2014-01-01

    Traditionally, strain effect was mainly considered in the materials with periodic lattice structure, and was thought to be very weak in amorphous semiconductors. Here, we investigate the effects of strain in films of cobalt-doped amorphous carbon (Co-C) grown on 0.7PbMg1/3Nb2/3O3-0.3PbTiO3 (PMN-PT) substrates. The electric transport properties of the Co-C films were effectively modulated by the piezoelectric substrates. Moreover, we observed, for the first time, strain-induced photoconductivity in such an amorphous semiconductor. Without strain, no photoconductivity was observed. When subjected to strain, the Co-C films exhibited significant photoconductivity under illumination by a 532-nm monochromatic light. A strain-modified photoconductivity theory was developed to elucidate the possible mechanism of this remarkable phenomenon. The good agreement between the theoretical and experimental results indicates that strain-induced photoconductivity may derive from modulation of the band structure via the strain effect. PMID:25338641

  18. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

  19. Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors

    DOEpatents

    Biefeld, Robert M.; Dawson, L. Ralph; Fritz, Ian J.; Kurtz, Steven R.; Zipperian, Thomas E.

    1991-01-01

    A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.

  20. Photoconductive switching for HPM (High Power Microwave) generation

    NASA Astrophysics Data System (ADS)

    Pocha, M. D.; Hofer, W. W.

    Photoconductive switching has been explored at LLNL and demonstrated to be a viable technology for high power microwave (HPM) generation. This technology enables the development of compact, portable, and efficient HPM sources. At LLNL we have successfully switched 35 KV in less than 200 ps using laser triggered, 1 x 5 x 20 mm GaAs switches. Based on these results we are developing an HPM generator with applications for HPM weapons and high power, wideband radar. The paper will discuss the physics limits and tradeoffs in the application of this technology. Among the topics discussed will be switching efficiency, candidate switch materials, laser requirements, applicable laser technologies, generator configurations, and cooling requirements and techniques. In addition to presenting theoretical and practical considerations, the paper will discuss on-going work at LLNL and elsewhere.

  1. Pulsed terahertz time domain spectroscopy of vertically structured photoconductive antennas

    NASA Astrophysics Data System (ADS)

    Faulks, R.; Rihani, S.; Beere, H. E.; Evans, M. J.; Ritchie, D. A.; Pepper, M.

    2010-02-01

    We present a terahertz (THz) photoconductive emitter structure, which employs a n-doped layer underneath a low-temperature-grown GaAs region to enable the THz transient to couple vertically through a defined mesa. A nonlinear bias dependence is observed, yielding an order in magnitude improvement in power for a mesa device with a 100 μm2 area over a conventional planar control reference device at 32 V and 5 mW illumination power. We relate the bias dependence of the THz signal to the breakdown voltage observed in the current-voltage characteristic. Reducing the antenna gap size through reducing the thickness of the low temperature-GaAs region below 1 μm shows a large improvement in the bandwidth of the device, with an enhancement of the normalized intensity between 0.2 to 2 THz for a bow-tie antenna geometry.

  2. Photoconductive switching for HPM (high power microwave) generation

    SciTech Connect

    Pocha, M.D.; Hofer, W.W.

    1990-01-01

    Photoconductive switching has been explored at LLNL and demonstrated to be a viable technology for high power microwave (HPM) generation. This technology enables the development of compact, portable, and efficient HPM sources. At LLNL we have successfully switched 35 KV in <200 ps using laser triggered, 1 {times} 5 {times} 20 mm GaAs switches. Based on these results we are developing an HPM generator with applications for HPM weapons and high power, wideband radar. The paper will discuss the physics limits and tradeoffs in the application of this technology. Among the topics discussed will be switching efficiency, candidate switch materials, laser requirements, applicable laser technologies, generator configurations, and cooling requirements and techniques. In addition to presenting theoretical and practical considerations, the paper will discuss on-going work at LLNL and elsewhere. 11 refs., 2 figs., 1 tab.

  3. Difference Between Far-Infrared Photoconductivity Spectroscopy and Absorption Spectroscopy: Theoretical Evidence of the Electron Reservoir Mechanism

    NASA Astrophysics Data System (ADS)

    Toyoda, Tadashi; Fujita, Maho; Uchida, Tomohisa; Hiraiwa, Nobuyoshi; Fukuda, Taturo; Koizumi, Hideki; Zhang, Chao

    2013-08-01

    The intriguing difference between far-infrared photoconductivity spectroscopy and absorption spectroscopy in the measurement of the magnetoplasmon frequency in GaAs quantum wells reported by Holland et al. [Phys. Rev. Lett. 93, 186804 (2004)] remains unexplained to date. This Letter provides a consistent mechanism to solve this puzzle. The mechanism is based on the electron reservoir model for the integer quantum Hall effect in graphene [Phys. Lett. A 376, 616 (2012)]. We predict sharp kinks to appear in the magnetic induction dependence of the magnetoplasmon frequency at very low temperatures such as 14 mK in the same GaAs quantum well sample used by Holland et al..

  4. Ultrahigh photoconductivity of bandgap-graded CdSxSe1‑x nanowires probed by terahertz spectroscopy

    NASA Astrophysics Data System (ADS)

    Liu, Hongwei; Lu, Junpeng; Yang, Zongyin; Teng, Jinghua; Ke, Lin; Zhang, Xinhai; Tong, Limin; Sow, Chorng Haur

    2016-06-01

    Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdSxSe1‑x nanowires and its detailed analysis by means of ultrafast optical-pump terahertz-probe (OPTP) spectroscopy. The recombination rates and carrier mobility are quantitatively obtained via investigation of the transient carrier dynamics in the nanowires. By analysis of the terahertz (THz) spectra, we obtain an insight into the bandgap gradient and band alignment to carrier transport along the nanowires. The demonstration of the ultrahigh photoconductivity makes bandgap-graded CdSxSe1‑x nanowires a promising candidate as building blocks for nanoscale electronic and photonic devices.

  5. Ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires probed by terahertz spectroscopy.

    PubMed

    Liu, Hongwei; Lu, Junpeng; Yang, Zongyin; Teng, Jinghua; Ke, Lin; Zhang, Xinhai; Tong, Limin; Sow, Chorng Haur

    2016-01-01

    Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires and its detailed analysis by means of ultrafast optical-pump terahertz-probe (OPTP) spectroscopy. The recombination rates and carrier mobility are quantitatively obtained via investigation of the transient carrier dynamics in the nanowires. By analysis of the terahertz (THz) spectra, we obtain an insight into the bandgap gradient and band alignment to carrier transport along the nanowires. The demonstration of the ultrahigh photoconductivity makes bandgap-graded CdSxSe1-x nanowires a promising candidate as building blocks for nanoscale electronic and photonic devices. PMID:27263861

  6. Ultrahigh photoconductivity of bandgap-graded CdSxSe1−x nanowires probed by terahertz spectroscopy

    PubMed Central

    Liu, Hongwei; Lu, Junpeng; Yang, Zongyin; Teng, Jinghua; Ke, Lin; Zhang, Xinhai; Tong, Limin; Sow, Chorng Haur

    2016-01-01

    Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdSxSe1−x nanowires and its detailed analysis by means of ultrafast optical-pump terahertz-probe (OPTP) spectroscopy. The recombination rates and carrier mobility are quantitatively obtained via investigation of the transient carrier dynamics in the nanowires. By analysis of the terahertz (THz) spectra, we obtain an insight into the bandgap gradient and band alignment to carrier transport along the nanowires. The demonstration of the ultrahigh photoconductivity makes bandgap-graded CdSxSe1−x nanowires a promising candidate as building blocks for nanoscale electronic and photonic devices. PMID:27263861

  7. Photoconductive detection of hydrogen in ZnO and rutile TiO2

    NASA Astrophysics Data System (ADS)

    Lavrov, E. V.; Mchedlidze, T.; Herklotz, F.

    2016-08-01

    Hydrogen donors in ZnO and rutile TiO2 are probed by means of photoconductivity and IR absorption. It is shown that the O-H bonds giving rise to the local vibrational modes (LVMs) of interstitial hydrogen at 3611 and 3290 cm-1 in the case of ZnO and TiO2, respectively, also occur in the photoconductivity spectra as Fano resonances. The effects of isotope substitution, concentration, sample thickness, influence of other donors present in both oxides are considered. Based on the shape and frequency of these resonances, it is concluded that the apparent ionization energy of interstitial hydrogen in rutile TiO2 is less than 300 meV. By a direct comparison, we also demonstrate that photoconductive detection of LVMs of defects in thin semiconductor films is superior to the standard IR absorption.

  8. Giant Persistent Photoconductivity of the WO3 Nanowires in Vacuum Condition

    PubMed Central

    2011-01-01

    A giant persistent photoconductivity (PPC) phenomenon has been observed in vacuum condition based on a single WO3 nanowire and presents some interesting results in the experiments. With the decay time lasting for 1 × 104 s, no obvious current change can be found in vacuum, and a decreasing current can be only observed in air condition. When the WO3 nanowires were coated with 200 nm SiO2 layer, the photoresponse almost disappeared. And the high bias and high electric field effect could not reduce the current in vacuum condition. These results show that the photoconductivity of WO3 nanowires is mainly related to the oxygen adsorption and desorption, and the semiconductor photoconductivity properties are very weak. The giant PPC effect in vacuum condition was caused by the absence of oxygen molecular. And the thermal effect combining with oxygen re-adsorption can reduce the intensity of PPC.

  9. Continuous and Pulsed THz generation with molecular gas lasers and photoconductive antennas gated by femtosecond pulses

    NASA Astrophysics Data System (ADS)

    Cruz, Flavio C.; Nogueira, T.; Costa, Leverson F. L.; Jarschel, Paulo F.; Frateschi, Newton C.; Viscovini, Ronaldo C.; Vieira, Bruno R. B.; Guevara, Victor M. B.; Pereira, Daniel

    2008-04-01

    We report THz generation based on two systems: 1) continuous-wave (cw) laser generation in molecular gas lasers, and 2) short pulse generation in photoconductive antennas, gated by femtosecond near-infrared Ti:sapphire lasers. With the first system, we have generated tens of monochromatic cw laser lines over the last years, extending roughly from 40 microns to several hundred microns. This is done by optical pumping of gas lasers based on polar molecules such as methanol and its isotopes. In the second system, under development, pulsed THz radiation is generated by a photoconductive antenna built in a semi-insulating GaAs substrate excited by femtosecond pulses from a near-infrared (800 nm) Ti:sapphire laser.

  10. Directly tailoring photon-electron coupling for sensitive photoconductance.

    PubMed

    Huang, Zhiming; Zhou, Wei; Huang, Jingguo; Wu, Jing; Gao, Yanqing; Qu, Yue; Chu, Junhao

    2016-01-01

    The coupling between photons and electrons is at the heart of many fundamental phenomena in nature. Despite tremendous advances in controlling electrons by photons in engineered energy-band systems, control over their coupling is still widely lacking. Here we demonstrate an unprecedented ability to couple photon-electron interactions in real space, in which the incident electromagnetic wave directly tailors energy bands of solid to generate carriers for sensitive photoconductance. By spatially coherent manipulation of metal-wrapped material system through anti-symmetric electric field of the irradiated electromagnetic wave, electrons in the metals are injected and accumulated in the induced potential well (EIW) produced in the solid. Respective positive and negative electric conductances are easily observed in n-type and p-type semiconductors into which electrons flow down from the two metallic sides under light irradiation. The photoconductivity is further confirmed by sweeping the injected electrons out of the semiconductor before recombination applied by sufficiently strong electric fields. Our work opens up new perspectives for tailoring energy bands of solids and is especially relevant to develop high effective photon detection, spin injection, and energy harvesting in optoelectronics and electronics. PMID:26964883

  11. Directly tailoring photon-electron coupling for sensitive photoconductance

    NASA Astrophysics Data System (ADS)

    Huang, Zhiming; Zhou, Wei; Huang, Jingguo; Wu, Jing; Gao, Yanqing; Qu, Yue; Chu, Junhao

    2016-03-01

    The coupling between photons and electrons is at the heart of many fundamental phenomena in nature. Despite tremendous advances in controlling electrons by photons in engineered energy-band systems, control over their coupling is still widely lacking. Here we demonstrate an unprecedented ability to couple photon-electron interactions in real space, in which the incident electromagnetic wave directly tailors energy bands of solid to generate carriers for sensitive photoconductance. By spatially coherent manipulation of metal-wrapped material system through anti-symmetric electric field of the irradiated electromagnetic wave, electrons in the metals are injected and accumulated in the induced potential well (EIW) produced in the solid. Respective positive and negative electric conductances are easily observed in n-type and p-type semiconductors into which electrons flow down from the two metallic sides under light irradiation. The photoconductivity is further confirmed by sweeping the injected electrons out of the semiconductor before recombination applied by sufficiently strong electric fields. Our work opens up new perspectives for tailoring energy bands of solids and is especially relevant to develop high effective photon detection, spin injection, and energy harvesting in optoelectronics and electronics.

  12. Directly tailoring photon-electron coupling for sensitive photoconductance

    PubMed Central

    Huang, Zhiming; Zhou, Wei; Huang, Jingguo; Wu, Jing; Gao, Yanqing; Qu, Yue; Chu, Junhao

    2016-01-01

    The coupling between photons and electrons is at the heart of many fundamental phenomena in nature. Despite tremendous advances in controlling electrons by photons in engineered energy-band systems, control over their coupling is still widely lacking. Here we demonstrate an unprecedented ability to couple photon-electron interactions in real space, in which the incident electromagnetic wave directly tailors energy bands of solid to generate carriers for sensitive photoconductance. By spatially coherent manipulation of metal-wrapped material system through anti-symmetric electric field of the irradiated electromagnetic wave, electrons in the metals are injected and accumulated in the induced potential well (EIW) produced in the solid. Respective positive and negative electric conductances are easily observed in n-type and p-type semiconductors into which electrons flow down from the two metallic sides under light irradiation. The photoconductivity is further confirmed by sweeping the injected electrons out of the semiconductor before recombination applied by sufficiently strong electric fields. Our work opens up new perspectives for tailoring energy bands of solids and is especially relevant to develop high effective photon detection, spin injection, and energy harvesting in optoelectronics and electronics. PMID:26964883

  13. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al{sub 2}O{sub 3} gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

    SciTech Connect

    Aoki, Takeshi Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-15

    This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al{sub 2}O{sub 3} gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al{sub 2}O{sub 3} in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al{sub 2}O{sub 3} layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (D{sub it}) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce D{sub it} to below 2 × 10{sup 12} cm{sup −2} eV{sup −1}. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  14. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1986-01-01

    It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail.

  15. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  16. Carrier heating and negative photoconductivity in graphene

    SciTech Connect

    Heyman, J. N.; Stein, J. D.; Kaminski, Z. S.; Banman, A. R.; Massari, A. M.; Robinson, J. T.

    2015-01-07

    We investigated negative photoconductivity in graphene using ultrafast terahertz techniques. Infrared transmission was used to determine the Fermi energy, carrier density, and mobility of p-type chemical vapor deposition graphene samples. Time-resolved terahertz photoconductivity measurements using a tunable mid-infrared pump probed these samples at photon energies between 0.35 eV and 1.55 eV, approximately one-half to three times the Fermi energy of the samples. Although interband optical transitions in graphene are blocked for pump photon energies less than twice the Fermi energy, we observe negative photoconductivity at all pump photon energies investigated, indicating that interband excitation is not required to observe this effect. Our results are consistent with a thermalized free-carrier population that cools by electron-phonon scattering, but are inconsistent with models of negative photoconductivity based on population inversion.

  17. Realizing the potential of photoconductive switching for HPM applications

    SciTech Connect

    Oicles, J.A.; Grant, J.R.; Herman, M.H.

    1995-11-01

    Recent systems developments that take advantage of avalanche-mode photoconductive switching have led to major breakthroughs in high power microwave (HPM) generator performance. The best example is the GEM 2 demonstrator system developed for the Air Force. The delivered system, using over 800 BASS{trademark} photoconductive switches arrayed in 72 identical modules firing with 10-psec accuracy, produces 1 GW of peak power and an effective radiated power of over 100 GW. The authors are now looking beyond GEM 2 at continuing major improvements. The simplicity and flexibility of modular designs, such as GEM 2, facilitates new configurations and encourages timely inclusion of additional innovations. Concepts under consideration range from miniaturized generators, taking fall advantage of the solid-state approach, to generator arrays considerably larger than GEM 2. Power conditioning and antenna sizes dominate present systems. Optical triggering subsystems based on semiconductor lasers, though relatively small, are still much larger than the corresponding BASS-based microwave generators. Work underway is aimed at these limitations. Several candidate solid-state switching approaches for pulse charging, for example, offer many additional benefits. Further, commercial developments have resulted in extraordinarily compact laser drivers to effect similar size and weight benefits to the Optical Trigger Subsystem.

  18. Enhanced terahertz emission from a multilayered low temperature grown GaAs structure

    NASA Astrophysics Data System (ADS)

    Rihani, Samir; Faulks, Richard; Beere, Harvey E.; Farrer, Ian; Evans, Michael; Ritchie, David A.; Pepper, Michael

    2010-03-01

    We report the use of a multilayered structure comprising of alternating layers of low temperature grown GaAs and high temperature grown AlAs, as a terahertz (THz) photoconductive antenna emitter and receiver. Devices based on 10×10 μm2 mesa defined photoconductive gaps were fabricated on the multilayered structure, and a comparison made to conventional planar devices. The mesa defined photoconductive antennas allowed successive contact through the multilayered structure, which resulted in an increase in THz emission power and detection responsivity with increasing number of layers in contact with the antenna electrodes. A comparison with a conventional single layered device, processed in an identical mesa geometry, confirmed that the enhancement in THz emission is solely due to the multilayered nature of the device, whereas the improved receiver performance can be partially attributed to the mesa geometry.

  19. 2D nanocomposite photoconductive sensors fully dry drawn on regular paper

    NASA Astrophysics Data System (ADS)

    Brus, V. V.; Maryanchuk, P. D.; Kovalyuk, Z. D.; Abashyn, S. L.

    2015-06-01

    We proposed a new type of low-cost and environmentally friendly photoconductive sensor, based on GaSe/graphite nanocomposite fully dry drawn on paper. The proposed fully-drawn nanocomposite sensors successfully utilize the unique combination of structural and electrical properties of a layered semiconductor and graphite. In spite of the relatively pure photosensitivity of the proposed photodetectors, we believe that this work is the first step for the further development and enhancement of extremely simple and low-cost paper-based dry drawn layered semiconductor/graphite nanocomposite sensors.

  20. Emission characteristics of ion-irradiated In(0.53)Ga(0.47)As based photoconductive antennas excited at 1.55 microm.

    PubMed

    Mangeney, J; Chimot, N; Meignien, L; Zerounian, N; Crozat, P; Blary, K; Lampin, J F; Mounaix, P

    2007-07-01

    We present a detailed study of the effect of the carrier lifetime on the terahertz signal characteristics emitted by Br(+)-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited by 1550 nm wavelength femtosecond optical pulses. The temporal waveforms and the average radiated powers for various carrier lifetimes are experimentally analyzed and compared to predictions of analytical models of charge transport. Improvements in bandwidth and in average power of the emitted terahertz radiation are observed with the decrease of the carrier lifetime on the emitter. The power radiated by ion-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited by 1550 nm wavelength optical pulses is measured to be 0.8 muW. This value is comparable with or greater than that emitted by similar low temperature grown GaAs photoconductive antennas excited by 780 nm wavelength optical pulses. PMID:19547233

  1. A method of monitoring the temperature of the photoconductive antenna

    NASA Astrophysics Data System (ADS)

    Liu, Hong; Wang, Yiqi; Li, Zhou; Bai, Yang; Pu, Ting; Kuang, Tingting; Chen, Kejian

    2014-11-01

    Photoconductive antenna (PCA), as the most widely used emitter (or detector) in Terahertz time-domain spectroscopy (TDS) system, virtually acts as a semiconductor switch, whose electrical conductivity controlled by pump light. At the same time, the heat caused by the pump light and the electrical bias will be stacked in a tiny area. Inevitably, the thermal effects, which may reduce the performance of PCA and the operational lifetime of device, need to be considered, especially for that generated by a compact package fiber-pigtailed photoconductive antenna. Nonetheless, there still lacks of relevant reports about real-time temperature monitoring for PCA. This paper proposes a method to obtain the temperature information by observing the temperature dependent frequency drifting of radiation spectroscopy. In other words, it converts the temperature information via analyzing the radiation spectrum of the conventional TDS system. In this work, we simulate a design of meta-atom-loaded PCA with indium antimonide (InSb). As a kind of temperature-dependent permittivity of the semiconductor, InSb is stuffed into the gap of split-ring resonator (SRR). When the temperature increases from 300K to 380 K, the resonance frequency shifts from 0.582THz to 0.678THz (a shift more than 16%), calculated by the commercial software-CST. The significant blue shift is caused by the SRR loading temperature sensitive materials, well analyzed by the LC resonant circuit model. Then, one can clearly obtain the actual antenna temperature from the radiation spectrum through the relationship between temperature and resonance frequency. Always, this simply method could be applied to shift the peak frequency of spectrum for various applications.

  2. Heteroepitaxial growth and multiferroic properties of Mn-doped BiFeO3 films on SrTiO3 buffered III-V semiconductor GaAs

    NASA Astrophysics Data System (ADS)

    Gao, G. Y.; Yang, Z. B.; Huang, W.; Zeng, H. Z.; Wang, Y.; Chan, H. L. W.; Wu, W. B.; Hao, J. H.

    2013-09-01

    Epitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO (100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaAs have an effective ferroelectric switching. The MBFO films exhibit good ferroelectric behavior (2Pr ˜ 92 μC/cm2 and 2EC ˜ 372 kV/cm). Ferromagnetic property with saturated magnetization of 6.5 emu/cm3 and coercive field of about 123 Oe is also found in the heterostructure at room temperature.

  3. Generation of high power pulsed terahertz radiation using a plasmonic photoconductive emitter array with logarithmic spiral antennas

    SciTech Connect

    Berry, Christopher W.; Hashemi, Mohammad R.; Jarrahi, Mona

    2014-02-24

    An array of 3 × 3 plasmonic photoconductive terahertz emitters with logarithmic spiral antennas is fabricated on a low temperature (LT) grown GaAs substrate and characterized in response to a 200 fs optical pump from a Ti:sapphire mode-locked laser at 800 nm wavelength. A microlens array is used to split and focus the optical pump beam onto the active area of each plasmonic photoconductive emitter element. Pulsed terahertz radiation with record high power levels up to 1.9 mW in the 0.1–2 THz frequency range is measured at an optical pump power of 320 mW. The record high power pulsed terahertz radiation is enabled by the use of plasmonic contact electrodes, enhancing the photoconductor quantum efficiencies, and by increasing the overall device active area, mitigating the carrier screening effect and thermal breakdown at high optical pump power levels.

  4. Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures

    NASA Astrophysics Data System (ADS)

    Golovynskyi, S. L.; Dacenko, O. I.; Kondratenko, S. V.; Lavoryk, S. R.; Mazur, Yu. I.; Wang, Zh. M.; Ware, M. E.; Tarasov, G. G.; Salamo, G. J.

    2016-05-01

    Photoelectric properties of laterally correlated multilayer InGaAs/GaAs quantum dots (QDs) heterostructures are studied. The response of the photocurrent to increasing excitation intensity is found to be nonlinear and varying with excitation energy. The structures are photosensitive in a wide range of photon energies above 0.6 eV. The spectral dependence of the photoconductivity (PC) is caused by strong interaction between the bulk GaAs and the lower energy states of the wetting layer, the QDs, as well as the defect states in the GaAs band gap. In particular, a mechanism for the participation of deep electron trap levels in the photocurrent is clarified. These structures also demonstrate a high sensitivity of up to 10 A/W at low excitation intensities. However, at higher excitation intensities, the sensitivity reduces exhibiting a strong spectral dependence at the same time. The observed sublinear PC dependence on excitation power results from a direct electron-hole recombination both in the QDs and in GaAs host. The solution of rate equations included the contributions of QD ground and exited states, bulk GaAs states and the states of defects within the GaAs bandgap describes well the experimental data.

  5. New developments in photoconductive detectors

    SciTech Connect

    Han, S.

    1996-07-01

    Nearly ideal for detecting ionizing radiation, wide bandgap semiconductors present a possibility of having outstanding radiation hardness, fast charge collection and low leakage current that will allow them to be used in high radiation, high temperature, and chemically aggressive environments. Over the past few years, the improvements in the electrical quality of wide bandgap semiconductors have progressed enormously. One particular wide bandgap semiconductor, diamond, has properties which may be ideal for radiation detection. Since the discovery of low pressure and low temperature deposition of diamond, the possibility of large area diamond films have become a reality. Over the past few years, great progress has been made in advancing the electrical quality of chemical-vapor-deposited (CVD) diamond. Presently, unprecedented diamond wafer size of 7 in. diameter is possible. Due to both the present electrical quality and the available size, the utilization of diamond in radiation detection applications is not just a dream but a reality. The progression of CVD diamond`s electrical properties in the last few years will be presented along with what is currently possible. Applications of CVD diamond for the National Ignition Facility (NIF) diagnostics will be reviewed. In addition, a brief review concerning other possible wide bandgap semiconductors for ICF diagnostics will be presented.

  6. Fano resonances in photoconductivity spectra of hydrogen donors in ZnO and rutile

    NASA Astrophysics Data System (ADS)

    Lavrov, E. V.; Herklotz, F.; Weber, J.

    2015-02-01

    The results of photoconductivity studies of hydrogen donors in ZnO and rutile TiO2 are presented. It is shown that local vibrational modes of O-H bonds comprising donors in both semiconductors can be detected in photoconductivity spectra as Fano resonances at 3611 and 3290 cm-1 in the case of ZnO and TiO2, respectively. The frequencies of these features red-shift in energy down to 2668 (ZnO) and 2445 cm-1 (TiO2) if hydrogen is substituted by deuterium. Based on the frequency of the deuterium resonance it is concluded that the ionization energy of the hydrogen donor in TiO2 is less than 300 meV, which is in variance with predictions of theory. The reasons for such a discrepancy are discussed.

  7. Terahertz photoconductive antenna with metal nanoislands.

    PubMed

    Park, Sang-Gil; Choi, Yongje; Oh, Young-Jae; Jeong, Ki-Hun

    2012-11-01

    This work presents a nanoplasmonic photoconductive antenna (PCA) with metal nanoislands for enhancing terahertz (THz) pulse emission. The whole photoconductive area was fully covered with metal nanoislands by using thermal dewetting of thin metal film at relatively low temperature. The metal nanoislands serve as plasmonic nanoantennas to locally enhance the electric field of an ultrashort pulsed pump beam for higher photocarrier generation. The plasmon resonance of metal nanoislands was achieved at an excitation laser wavelength by changing the initial thickness of metal film. This nanoplasmonic PCA shows two times higher enhancement for THz pulse emission power than a conventional PCA. This work opens up a new opportunity for plasmon enhanced large-aperture THz photoconductive antennas. PMID:23187370

  8. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1983-01-01

    GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

  9. The development of integrated chemical microsensors in GaAs

    SciTech Connect

    CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

    1999-11-01

    Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

  10. Negative photoconductivity of InAs nanowires.

    PubMed

    Han, Yuxiang; Zheng, Xiao; Fu, Mengqi; Pan, Dong; Li, Xing; Guo, Yao; Zhao, Jianhua; Chen, Qing

    2016-01-14

    Negative photoconductivity is observed in InAs nanowires (NWs) without a surface defective layer. The negative photoconductivity is strongly dependent on the wavelength and intensity of the light, and is also sensitive to the environmental atmosphere. Two kinds of mechanisms are discerned to work together. One is related to gas adsorption, which is photodesorption of water molecules and photo-assisted chemisorption of O2 molecules. The other one can be attributed to the photogating effect introduced by the native oxide layer outside the NWs. PMID:26631367

  11. Unpinned GaAs MOS capacitors and transistors

    NASA Astrophysics Data System (ADS)

    Tiwari, Sandip; Wright, Steven L.; Batey, John

    1988-09-01

    Metal-oxide-semiconductor (MOS) capacitors and field-effect transistors (MOSFETs) in the GaAs semiconductor system using an unpinned interface are described. The structures utilize plasma-enhanced chemical-vapor deposition (PECVD) for the silicon-dioxide insulator on GaAs that has been terminated with a few monolayers of silicon during growth by molecular beam epitaxy. Interface densities in the structures have been reduced to about 10 to the 12th/sq cm-eV. High-frequency characteristics indicate strong inversion of both p-type and n-type GaAs. The excellent insulating quality of the oxide has allowed demonstration of quasi-static characteristics. MOSFETs operating in depletion mode with a transconductance of 60 mS/mm at 8.0-micron gate lengths have been fabricated.

  12. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1985-01-01

    The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

  13. Semiconductor technology program: Progress briefs

    NASA Technical Reports Server (NTRS)

    Galloway, K. F.; Scace, R. I.; Walters, E. J.

    1981-01-01

    Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

  14. Trap-induced photoconductivity in singlet fission pentacene diodes

    NASA Astrophysics Data System (ADS)

    Qiao, Xianfeng; Zhao, Chen; Chen, Bingbing; Luan, Lin

    2014-07-01

    This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

  15. Trap-induced photoconductivity in singlet fission pentacene diodes

    SciTech Connect

    Qiao, Xianfeng Zhao, Chen; Chen, Bingbing; Luan, Lin

    2014-07-21

    This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

  16. Optical Response in Amorphous GaAs Thin Films Prepared by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Kiwa, Toshihiko; Kawashima, Ichiro; Nashima, Shigeki; Hangyo, Masanori; Tonouchi, Masayoshi

    2000-11-01

    Femtosecond optical response in GaAs thin films has been studied. We prepared GaAs thin films on MgO substrates and on YBa2Cu3O7-δ (YBCO) thin films using pulsed laser deposition (PLD) at temperatures below 250^\\circC@. A photocarrier lifetime of less than 1 ps is measured for the prepared GaAs thin films using femtosecond time-domain reflectivity change measurements. Pulsed electromagnetic wave [terahertz (THz) radiaiton] containing a frequency component of up to 1 THz is emitted from fabricated photoconductive switches using the prepared thin films. We also evaluated the THz radiation properties emitted from the photoswitches on the YBCO thin films.

  17. High-energy passively Q-switched operation of Yb:GdCa(4)O(BO(3))(3) laser with a GaAs semiconductor saturable absorber.

    PubMed

    Chen, Xiaowen; Wang, Lisha; Han, Wenjuan; Guo, Yunfeng; Xu, Honghao; Yu, Haohai; Zhang, Huaijin; Liu, Junhai

    2015-11-16

    High-energy passively Q-switched operation of a Yb:GdCa(4)O(BO(3))(3) laser is demonstrated, with a GaAs crystal plate acting as saturable absorber. An average output power of 1.31 W at 1027 nm is produced at a pulse repetition rate of 1.92 kHz, the resulting pulse energy, duration, and peak power being respectively 0.68 mJ, 9.0 ns, and 75.6 kW. The shortest pulse duration obtained is 4.9 ns; whereas the maximum pulse energy achievable amounts to 0.83 mJ, which proves to be nearly one order of magnitude higher than ever generated from Yb or Nd lasers passively Q-switched by a GaAs saturable absorber. PMID:26698515

  18. Dember and photo-electromotive-force currents in silicon photoconductive detectors

    NASA Astrophysics Data System (ADS)

    Dikmelik, Yamaç; Davidson, Frederic M.

    2004-09-01

    Dember and photo-electromotive-force (PEMF) currents are investigated in silicon photoconductive detectors both theoretically and experimentally. Dember photocurrents were found to dominate the response of high-purity silicon samples with top-surface electrodes to a moving interference pattern. The use of surface electrodes leads to shadowed regions beneath the electrodes, and Dember photocurrents appear under short-circuit conditions. A single-charge-carrier model of the Dember effect is in good qualitative agreement with experimental results. We also show theoretically that the PEMF effect in silicon is weak compared with other semiconductors because of its relatively high intrinsic conductivity.

  19. Gamma ray measurements with photoconductive detectors using a dense plasma focus

    SciTech Connect

    May, M. J. Brown, G. V.; Halvorson, C.; Schmidt, A.; Bower, D.; Tran, B.; Lewis, P.; Hagen, C.

    2014-11-15

    Photons in the MeV range emitted from the dense plasma focus (DPF) at the NSTec North Las Vegas Facility have been measured with both neutron-damaged GaAs and natural diamond photoconductive detectors (PCDs). The DPF creates or “pinches” plasmas of various gases (e.g., H{sub 2}, D{sub 2}, Ne, Ar., etc.) that have enough energy to create MeV photons from either bremsstrahlung and/or (n,n{sup ′}) reactions if D{sub 2} gas is used. The high bandwidth of the PCDs enabled the first ever measurement of the fast micro-pinches present in DPF plasmas. Comparisons between a slower more conventional scintillator/photomultiplier tube based nuclear physics detectors were made to validate the response of the PCDs to fast intense MeV photon signals. Significant discrepancies in the diamond PCD responses were evident.

  20. Gamma ray measurements with photoconductive detectors using a dense plasma focus.

    PubMed

    May, M J; Brown, G V; Halvorson, C; Schmidt, A; Bower, D; Tran, B; Lewis, P; Hagen, C

    2014-11-01

    Photons in the MeV range emitted from the dense plasma focus (DPF) at the NSTec North Las Vegas Facility have been measured with both neutron-damaged GaAs and natural diamond photoconductive detectors (PCDs). The DPF creates or "pinches" plasmas of various gases (e.g., H2, D2, Ne, Ar., etc.) that have enough energy to create MeV photons from either bremsstrahlung and/or (n,n(')) reactions if D2 gas is used. The high bandwidth of the PCDs enabled the first ever measurement of the fast micro-pinches present in DPF plasmas. Comparisons between a slower more conventional scintillator/photomultiplier tube based nuclear physics detectors were made to validate the response of the PCDs to fast intense MeV photon signals. Significant discrepancies in the diamond PCD responses were evident. PMID:25430296

  1. Improved efficiency of photoconductive THz emitters by increasing the effective contact length of electrodes

    SciTech Connect

    Singh, Abhishek; Surdi, Harshad; Nikesh, V. V.; Prabhu, S. S.; Döhler, G. H.

    2013-12-15

    We study the effect of a surface modification at the interface between metallic electrodes and semiconducting substrate in Semi-Insulating GaAs (SI-GaAs) based photoconductive emitters (PCE) on the emission of Tera-Hertz (THz) radiation. We partially etch out a 500 nm thick layer of SI-GaAs in grating like pattern with various periods before the contact deposition. By depositing the electrodes on the patterned surface, the electrodes follow the contour of the grating period. This increases the effective contact length of the electrodes per unit area of the active regions on the PCE. The maxima of the electric field amplitude of the THz pulses emitted from the patterned surface are enhanced by up to more than a factor 2 as compared to an un-patterned surface. We attribute this increase to the increase of the effective contact length of the electrode due to surface patterning.

  2. Influence of N incorporation on persistent photoconductivity in GaAsN alloys

    NASA Astrophysics Data System (ADS)

    Field, R. L., III; Jin, Y.; Cheng, H.; Dannecker, T.; Jock, R. M.; Wang, Y. Q.; Kurdak, C.; Goldman, R. S.

    2013-04-01

    We examine the role of N environment on persistent photoconductivity (PPC) in GaAs1-xNx films. For x > 0.006, significant PPC is observed at cryogenic temperatures, with the PPC magnitude increasing with increasing x due to an increase in the density of N-induced levels. Interestingly, rapid thermal annealing suppresses the PPC magnitude and reduces the N interstitial fraction; thus, the N-induced level is likely associated with N interstitials. PPC is attributed to the photogeneration of carriers from N-induced levels to the conduction-band edge, leading to a modified N molecular bond configuration. With the addition of thermal energy, the ground state configuration is restored; the N-induced level is then able to accept carriers and the conductivity decays to its preillumination value.

  3. Radiation field screening in photoconductive antennae studied via pulsed terahertz emission spectroscopy

    NASA Astrophysics Data System (ADS)

    Loata, Gabriel C.; Thomson, Mark D.; Löffler, Torsten; Roskos, Hartmut G.

    2007-12-01

    We report terahertz emission experiments on low-temperature-grown GaAs photoconductive antennae. Two field-screening effects determine the device response: space-charge screening on a long time scale and radiation field screening of the local electric field. This latter effect is the principal cause for saturation of terahertz emission observed when the emitters are driven hard with high-repetition-rate femtosecond laser pulses. We present an equivalent-circuit model consisting of three elements: a resistor with time-dependent conductance (photoswitch), a time-dependent voltage source (space-charge screening), and the antenna impedance (terahertz emission and radiation field screening). The simulations with this voltage divider reproduce the measured data well.

  4. Design and fabrication of GaAs OMIST photodetector

    NASA Astrophysics Data System (ADS)

    Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

    1998-08-01

    We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

  5. Development and testing of gallium arsenide photoconductive detectors for ultra-fast, high dose rate electron and photon radiation measurements

    NASA Astrophysics Data System (ADS)

    Kharashvili, George

    Real time radiation dose measurements often present a challenge in high dose rate environments, like those needed for testing survivability of electronic devices or biological agents. Dosimetry needs at particle accelerator facilities require development of devices with fast (tens of picoseconds or less) response to pulsed radiation, linear response over a wide range of dose rates (up to 1011 Gy/s), high resistance to radiation damage, and successful operation in mixed gamma and neutron environments. Gallium arsenide photoconductive detectors (GaAs PCDs) have been shown to exhibit many of these desirable characteristics, especially the fast time response, when neutron irradiation is used to introduce displacement damage in the crystalline lattice of GaAs, hence improving the time response characteristics of the devices at the expense of their sensitivity. The objective of this project was to develop and test GaAs PCDs for ultra fast, high dose rate electron and bremsstrahlung radiation measurements. Effects of neutron pre-irradiation and detector size on the PCD properties were also investigated. GaAs PCDs with three different neutron irradiation levels (0, ˜1014, and 5 x 1015 n/cm 2 (1-MeV equivalent in GaAs) were fabricated. The devices were tested with 7, 20 and 38-MeV electron pulses produced by linear accelerators operating at the L-band frequency of 1.3-GHz and the S-band frequency of 2.8-GHz. In addition, detector responses at high dose rates were tested with 33-ns wide, 7-MeV maximum energy bremsstrahlung pulses produced by a pulse-power accelerator. The time response characteristics and the dose-rate ranges of application of the GaAs PCDs were determined. Several operational issues were identified. Recommendations on how to improve the PCD fabrication procedure and diagnostic capabilities for the high intensity radiation research are also discussed.

  6. Development of bulk GaAs room temperature radiation detectors

    SciTech Connect

    McGregor, D.S.; Knoll, G.F. . Dept. of Nuclear Engineering); Eisen, Y. . Soreq Nuclear Research Center); Brake, R. )

    1992-10-01

    This paper reports on GaAs, a wide band gap semiconductor with potential use as a room temperature radiation detector. Various configurations of Schottky diode detectors were fabricated with bulk crystals of liquid encapsulated Czochralski (LEC) semi-insulating undoped GaAs material. Basic detector construction utilized one Ti/Au Schottky contact and one Au/Ge/Ni alloyed ohmic contact. Pulsed X-ray analysis indicated pulse decay times dependent on bias voltage. Pulse height analysis disclosed non-uniform electric field distributions across the detectors tentatively explained as a consequence of native deep level donors (EL2) in the crystal.

  7. Electronic contribution to friction on GaAs

    SciTech Connect

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  8. Far-Infrared and Optical Studies of Gallium Arsenide and Aluminum Gallium Arsenide Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Stanaway, Mark Brian

    Available from UMI in association with The British Library. Requires signed TDF. This thesis reports far-infrared (FIR) and photoluminescence studies, performed at low temperatures (4.2K) and at magnetic fields up to 25T, of selectively and inadvertently doped bulk and low dimensional gallium arsenide (GaAs) and aluminium gallium arsenide (AlGaAs) semiconductor structures grown by molecular beam epitaxy. High-resolution FIR magnetospectroscopy of ultra -high mobility n-GaAs reveals a variety of shallow donor intra-impurity transitions plus spin-split higher Landau level transitions in the photoconductive response. The first observation of polarons bound to D^ - ions in bulk n-GaAs is reported. The excited state spectrum of the confined silicon donor in GaAs/AlGaAs multi-quantum wells (MQWs) has been examined. Narrower linewidths and more higher excited state donor transitions are noted in the present photoconductive investigation compared with previous reports. The electron recombination dynamics has been examined in silicon-doped GaAs/AlGaAs MQWs and homogeneous and sheet -doped bulk n-GaAs samples using time-resolved FIR photoconductivity. The extrinsic response of doped MQW structures suggests a potential use as a fast, sensitive detectors of FIR. FIR transmission measurements are reported for GaAs/AlGaAs quantum wells (QWs) of various widths in magnetic fields of up to 20T, tilted away from the normal to the QW plane by angles up to theta = 50^circ. Deviation of the cyclotron resonance field from a costheta law are interpreted using theoretical models describing Landau level/electric subband coupling. The in-plane magnetic field and excitation power dependence of the photoluminescence intensity of a GaAs/AlGaAs QW spectral feature is interpreted in terms of charge transfer in the QW, using a coupled oscillator model, and the efficiency of nonradiative electronic traps. In-plane magnetic field studies of the photoluminescence from a superlattice structure

  9. Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics

    NASA Astrophysics Data System (ADS)

    Paterson, G. W.; Bentley, S. J.; Holland, M. C.; Thayne, I. G.; Long, A. R.

    2011-09-01

    The admittances and subthreshold characteristics of capacitors and MOSFETs on buried InxGa1-xAs channel wafers with a dielectric stack of Gd0.25Ga0.15O0.6/Ga2O3 deposited on GaAs and In0.53Ga0.47As are reported. Both the GaAs and InGaAs interface samples show admittance characteristics indicative of the presence of defect states within the oxide, in agreement with previously reported data from the same oxides on n+ substrates. The interface state model is applied to the admittance data to extract an apparent interface state density (Dit) that includes interface and oxide states. The Dit profiles are very different and have pronounced effects on the device performance. The device subthreshold swings (SS) at low source-drain voltages are also used to extract an apparent Dit. A simple method is used to estimate the Fermi-level position within the bandgap (Et) at threshold, and the resulting Dit(Et) are found to be in good agreement with the admittance data. The importance of proper interpretation of SS and Dit in general and in GaAs interface devices in particular is emphasized. A model that accounts for the logarithmic sweep rate dependence of the extracted Dit due to the presence of oxide states is reported and used to estimate their density from SS measurements. The implications of the band parameters of an oxide with defect states within it for the comparison of different oxides on the same substrate and the issues around the comparison of results in general are discussed.

  10. Photoconducting positions monitor and imaging detector

    DOEpatents

    Shu, Deming; Kuzay, Tuncer M.

    2000-01-01

    A photoconductive, high energy photon beam detector/monitor for detecting x-rays and gamma radiation, having a thin, disk-shaped diamond substrate with a first and second surface, and electrically conductive coatings, or electrodes, of a predetermined configuration or pattern, disposed on the surfaces of the substrate. A voltage source and a current amplifier is connected to the electrodes to provide a voltage bias to the electrodes and to amplify signals from the detector.

  11. Selenium semiconductor core optical fibers

    SciTech Connect

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  12. Cubic GaS: A Surface Passivator For GaAs

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Barron, Andrew R.; Power, Michael B.; Jenkins, Phillip P.; Macinnes, Andrew N.

    1994-01-01

    Thin films of cubic form of gallium sulfide (GaS) formed on surfaces of gallium arsenide (GaAs) substrates via metal/organic chemical vapor deposition (MOCVD). Deposited cubic GaS, crystalline lattice matched to substrate GaAs, neutralizes electrically active defects on surfaces of both n-doped and p-doped GaAs. Enabling important GaAs-based semiconducting materials to serve as substrates for metal/insulator/semiconductor (MIS) capacitors. Cubic GaS enables fabrication of ZnSe-based blue lasers and light-emitting diodes. Because GaS is optically transparent, deposited to form window layers for such optoelectronic devices as light-emitting diodes, solar optical cells, and semiconductor lasers. Its transparency makes it useful as interconnection material in optoelectronic integrated circuits. Also useful in peeled-film technology because selectively etched from GaAs.

  13. Microwave GaAs Integrated Circuits On Quartz Substrates

    NASA Technical Reports Server (NTRS)

    Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

    1994-01-01

    Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

  14. Atomic hydrogen cleaning of GaAS Photocathodes

    SciTech Connect

    M. Poelker; J. Price; C. Sinclair

    1997-01-01

    It is well known that surface contaminants on semiconductors can be removed when samples are exposed to atomic hydrogen. Atomic H reacts with oxides and carbides on the surface, forming compounds that are liberated and subsequently pumped away. Experiments at Jefferson lab with bulk GaAs in a low-voltage ultra-high vacuum H cleaning chamber have resulted in the production of photocathodes with high photoelectron yield (i.e., quantum efficiency) and long lifetime. A small, portable H cleaning apparatus also has been constructed to successfully clean GaAs samples that are later removed from the vacuum apparatus, transported through air and installed in a high-voltage laser-driven spin-polarized electron source. These results indicate that this method is a versatile and robust alternative to conventional wet chemical etching procedures usually employed to clean bulk GaAs.

  15. Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip

    NASA Astrophysics Data System (ADS)

    Li-Shu, Wu; Yan, Zhao; Hong-Chang, Shen; You-Tao, Zhang; Tang-Sheng, Chen

    2016-06-01

    In this work, we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of GaAs pseudomorphic high electron mobility transistors (pHEMTs) and Si complementary metal–oxide semiconductor (CMOS) on the same Silicon substrate. GaAs pHEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique, and the best alignment accuracy of 5 μm is obtained. As a circuit example, a wide band GaAs digital controlled switch is fabricated, which features the technologies of a digital control circuit in Si CMOS and a switch circuit in GaAs pHEMT, 15% smaller than the area of normal GaAs and Si CMOS circuits.

  16. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    NASA Astrophysics Data System (ADS)

    Zhang, Jingyun; Lou, Xiabing; Si, Mengwei; Wu, Heng; Shao, Jiayi; Manfra, Michael J.; Gordon, Roy G.; Ye, Peide D.

    2015-02-01

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La2O3 as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an ION/IOFF ratio of greater than 107.

  17. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    SciTech Connect

    Zhang, Jingyun; Si, Mengwei; Wu, Heng; Ye, Peide D.; Lou, Xiabing; Gordon, Roy G.; Shao, Jiayi; Manfra, Michael J.

    2015-02-16

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

  18. Epitaxial and polycrystalline GaAs solar cells using OM-CVD techniques

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.; Wang, K. L.; Shin, B. K.; Stirn, R. J.

    1980-01-01

    GaAs epitaxial films were grown by chemical vapor deposition using organo-metallic sources (OM-CVD) on single crystal and polycrystalline bulk GaAs, as well as on bulk polycrystalline and recrystallized thin-film Ge substrates. Details of Antireflecting Metal-Oxide-Semiconductor (AMOS) solar cells fabricated on GaAs films grown on bulk polycrystalline Ge and recrystallized Ge thin-film substrates will be discussed, as well as preliminary photovoltaic results obtained for n(+)/p homojunction structures.

  19. Sensor Detects Semiconductor Escaping From Ampoule

    NASA Technical Reports Server (NTRS)

    Watring, Dale A.; Johnson, Martin L.

    1994-01-01

    Electrical resistance and temperature change upon exposure to semiconductors. Sensor detects breakage of ampoule containing molten semiconductor. Chemical reaction between hot semiconductor material and wire causes step increase in electrical resistance and temperature of wire. Step increase in temperature and resistance of sensor indicates presence of hot GaAs. Sensor used to shut down furnace automatically if ampoule breaks and prevents further release of molton semiconductor, which could quickly breach surrounding thin wall of cartridge, damage furnace, and/or release toxic vapors into surrounding area.

  20. Semiconductor superlattice photodetectors

    NASA Technical Reports Server (NTRS)

    Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

    1984-01-01

    A superlattice photomultiplier and a photodetector based on the real space transfer mechanism were studied. The wavelength for the first device is of the order of a micron or flexible corresponding to the bandgap absorption in a semiconductor. The wavelength for the second device is in the micron range (about 2 to 12 microns) corresponding to the energy of the conduction band edge discontinuity between an Al/(sub x)Ga(sub 1-x)As and GaAs interface. Both devices are described.

  1. Composite Semiconductor Substrates

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar; Radhakrishnan, Gouri; Katz, Joseph; Koliwad, Kris

    1989-01-01

    Epitaxial structure of three semiconductor materials - silicon, gallium arsenide, and cadmium telluride - makes possible integrated monolithic focal-plane arrays of photodectors. Silicon layer contains charge-coupled devices, gallium arsenide layer contains other fast electronic circuitry, and cadmium telluride layer serves as base for array of mercury cadmium telluride infrared sensors. Technique effectively combines two well-established techniques; metalorganic chemical-vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). Multilayer structure includes HgCdTe light sensors with Si readout devices and GaAs signal-processing circuits. CdTe layer provides base for building up HgCdTe layer.

  2. Optical and photoelectric properties of anodic oxide films on GaAs, GaP, and GaAs/sub 0. 6/P/sub 0. 4/

    SciTech Connect

    Kashkarov, P.K.; Obraztsov, A.N.; Sorokin, I.N.; Sosnovskikh, Yu.N.

    1987-03-01

    The authors investigate the optical absorption spectra and the photoconductivities of anodic oxide film based on GaAs, GaP, and GaAs/sub 0.6/P/sub 0.4/ in the range of light energy quanta 2-6.2 eV. Anodic oxide film (AOF) was studied on the surface of single crystals of GaAs and epitaxial layers of p-type Gap and AsAs/sub 0.6/P/sub 0.4/ of the n-type. The structures of the oxides were monitored by electron diffraction. The photoconductivity of the AOF was investigated. The absorption of the AOF in the visible and near-UV ranges was estimated by comparing the spectra of excitation of photoluminescence at 80 K for specimens coated with an AOF and specimens with the AOF removed by etching in HCl.

  3. Giant persistent photoconductivity in rough silicon nanomembranes.

    PubMed

    Feng, Ping; Mönch, Ingolf; Harazim, Stefan; Huang, Gaoshan; Mei, Yongfeng; Schmidt, Oliver G

    2009-10-01

    This paper reports the observation of giant persistent photoconductivity from rough Si nanomembranes. When exposed to light, the current in p-type Si nanomembranes is enhanced by roughly 3 orders of magnitude in comparison with that in the dark and can persist for days at a high conductive state after the light is switched off. An applied gate voltage can tune the persistent photocurrent and accelerate the response to light. By analyzing the band structure of the devices and the surfaces through various coatings, we attribute the observed effect to hole-localized regions in Si nanomembranes due to the rough surfaces, where light can activate the confined holes. PMID:19637888

  4. Luminescence and photoconductivity in magnesium aluminum spinel

    NASA Astrophysics Data System (ADS)

    Bandyopadhyay, Pradip K.; Summers, G. P.

    1985-02-01

    Ultraviolet-light excitation of thermochemically reduced MgAl2O4 single crystals below room temperature produces a luminescence band with a peak at 2.69 eV. The excitation spectrum of the 2.69-eV band coincides with the broad F-center absorption band at 5.30 eV. The 2.69-eV band is also emitted in uv-stimulated glow peaks which occur at 95 and 265 K. A photoconductivity maximum is observed at 5.39 eV at temperatures above 160 K, but the band is readily bleached by uv light.

  5. Semiconductor electrolyte photovoltaic energy converter

    NASA Technical Reports Server (NTRS)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  6. Optical conductivity for liquid semiconductors

    NASA Astrophysics Data System (ADS)

    Jain, Manish; Ko, Eunjung; Derby, J. J.; Chelikowsky, James

    2002-03-01

    We present calculations for the optical conductivity of several semiconductor liquids: SiGe, GaAs, CdTe, and ZnTe. We perform ab initio molecular dynamics for these liquids. The required interatomic forces are determined using the pseudopotential density functional method. We determine the optical conductivity by considering ensemble averages of the liquid state within the Kubo-Greenwood formalism. In the liquid phase, CdTe and ZnTe exhibit properties that are different from III-V and group IV semiconductors. CdTe and ZnTe remain semiconducting unlike SiGe and GaAs, which are metallic in the melt. These differences in optical conductivities are explained in terms of differences in the microstructure of the liquids. We also verify an empirical rule by Joffe and Regel. Their rule predicts the liquid will remain semiconducting if the short range order of the melt resembles that of the crystalline phase.

  7. SEU design consideration for MESFETs on LT GaAs

    SciTech Connect

    Weatherford, T.R.; Radice, R.; Eskins, D.

    1997-12-01

    Computer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII{reg_sign} process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined.

  8. Epitaxial Fe on free-standing GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Mingze; Darbandi, Ali; Majumder, Sarmita; Watkins, Simon; Kavanagh, Karen

    2016-07-01

    Epitaxial Fe contacts have been fabricated onto the top half of free-standing, Te-doped GaAs nanowires (NWs) via electrodeposition. Electrical isolation from the substrate via a polymeric layer enabled the measurement of electrical transport through individual wires. Using a fixed probe within a scanning electron microscope, an average metal-semiconductor diode barrier height of 0.69 ± 0.03 eV (ideality factor 1.48 ± 0.02) was found.

  9. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  10. Quantum effects in electron beam pumped GaAs

    SciTech Connect

    Yahia, M. E.; Azzouz, I. M.; Moslem, W. M.

    2013-08-19

    Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

  11. Hybrid ferromagnetic-semiconductor structures

    SciTech Connect

    Prinz, G.A. )

    1990-11-23

    Ultrahigh-vacuum growth techniques are now being used to grow single-crystal films of magnetic materials. These growth procedures, carried out in the same molecular beam epitaxy systems commonly used for the growth of semiconductor films, have yielded a variety of new materials and structures that may prove useful for integrated electronics and integrated optical device applications. Examples are given for growth on GaAs and ZnSe, including magnetic sandwiches and patterned structures. 14 refs., 9 figs.

  12. Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H-SiC semiconductors under light illumination at cryogenic temperatures

    NASA Astrophysics Data System (ADS)

    Mouneyrac, David; Hartnett, John G.; Le Floch, Jean-Michel; Tobar, Michael E.; Cros, Dominique; Krupka, Jerzy

    2010-11-01

    We report on extremely sensitive measurements of changes in the microwave properties of high purity nonintentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide, and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors while they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semiconductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data.

  13. Doped semiconductors and other solar energy materials

    NASA Astrophysics Data System (ADS)

    Williamson, D. L.

    1988-02-01

    A review is presented of recent applications of Mössbauer spectroscopy that focus on determining the fate of doped impurities in semiconductors, primarily GaAs, Ga1-xAlxAs and Si. Other solar energy materials and processes which are discussed include amorphous Si∶H-based alloys, chalcopyrites, transparent conducting oxides, photochemical processing via semiconductor powders in electrolytes, mirror making, and plant photosynthesis.

  14. Optically Pumped NMR Studies of Mechanically Induced Strain in GaAs Films

    NASA Astrophysics Data System (ADS)

    Bowers, Clifford; Wood, Ryan; Tokarski, John, III; McCarthy, Lauren; Saha, Dipta; Stanton, Christopher; Moreno, Jesus

    2015-03-01

    We present a new methodology for measuring strain in semiconductor films based on optically pumped NMR (OPNMR). Single crystals of GaAs were epoxy bonded to Si wafers at 100 °C. The GaAs is then variably thinned by selective chemical etching. Upon cooling, biaxial tensile strains are induced in the GaAs films since the coefficient of thermal expansion in GaAs is different than in the Si support. OPNMR experiments were carried out at 6-10 K. The OPNMR spectra are selective to nuclei within a photon penetration depth from the surface. When mounted on a 0.635 mm thick Si support, the strain, which is proportional to the observed quadrupole splitting, is found to decrease with increasing thickness of the GaAs films and appears to approach a residual value. When the same GaAs film is mounted on a thicker 5mm Si block, the strain increased. To explain the observations, we consider effects of dislocation relaxation of strain and bending of the composite. The interface strain extracted from the measurements is 5.5 × 10-4, in good agreement with the value estimated using the differential thermal contraction of Si and GaAs. The strain resolution of the technique is about 10-5 in GaAs.

  15. Saturation and Polarization Characteristics of 1.56 μm Optical Probe Pulses in a LTG-GaAs Photoconductive Antenna Terahertz Detector

    NASA Astrophysics Data System (ADS)

    Estacio, Elmer S.; Hibi, Masakazu; Saito, Katsuya; Que, Christopher T.; Furuya, Takashi; Miyamaru, Fumiaki; Nishizawa, Seizi; Yamamoto, Kohji; Tani, Masahiko

    2013-08-01

    The characteristics of low temperature-grown GaAs photoconductive antenna (PCA) terahertz detectors probed by 1.56 μm laser pulses are investigated. The influence of TM and TE polarized probe, as well as the saturation characteristics are studied for 2 μm- and 5 μm-gap PCA's. Different polarization characteristics at low probe powers and at the saturation regimes were observed. Results are explained in terms of the polarization-dependent photocarrier distribution at the PCA gap arising from tight focusing. This work also demonstrates using a 1.56 μm probe for a GaAs PCA to achieve ~60 dB SNR; matching its performance characteristics for above-bandgap probes.

  16. Photoconductivities in MoS2 Nanoflake Photoconductors

    NASA Astrophysics Data System (ADS)

    Shen, Wei-Chu; Chen, Ruei-San; Huang, Ying-Sheng

    2016-03-01

    Photoconductivities in molybdenum disulfide (MoS2) layered nanostructures with two-hexagonal crystalline structure prepared by mechanical exfoliation were investigated. The photoconductor-type MoS2 nanoflakes exhibit remarkable photoresponse under the above bandgap excitation wavelength of 532 nm at different optical intensity. The photocurrent responsivity and photoconductive gain of nanoflakes can reach, respectively, 30 AW-1 and 103 at the intensity of 50 Wm-2, which are several orders of magnitude higher than those of their bulk counterparts. The vacuum-enhanced photocurrent and power-independent responsivity/gain indicate a surface-controlled photoconduction mechanism in the MoS2 nanomaterial.

  17. Polarization dependent, surface plasmon induced photoconductance in gold nanorod arrays

    NASA Astrophysics Data System (ADS)

    Diefenbach, S.; Erhard, N.; Schopka, J.; Martin, A.; Karnetzky, C.; Iacopino, D.; Holleitner, A. W.

    2014-03-01

    We report on the photoconductance in two-dimensional arrays of gold nanorods which is strongly enhanced at the frequency of the longitudinal surface plasmon of the nanorods. The arrays are formed by a combination of droplet deposition and stamping of gold nanorod solutions on SiO2 substrates. We find that the plasmon induced photoconductance is sensitive to the linear polarization of the exciting photons. We interpret the occurrence of the photoconductance as a bolometric enhancement of the arrays' conductance upon excitation of the longitudinal surface plasmon resonance of the nanorods.

  18. Persistent photoconductivity in high resistive Zn3P2

    NASA Astrophysics Data System (ADS)

    Sierański, K.; Szatkowski, J.; Pawlikowski, J. M.

    2014-02-01

    Resistivity and photoconductivity of p-type Zn3P2 polycrystals grown by closed tube vapour transport method have been investigated. Persistent photoconductivity (PPC) has been observed at temperatures T < 200 K. At 77 K, the photoconduction persists for over 103 s after termination of the light. The PPC buildup and decay kinetics have been measured at 77 K and analyzed in the frame of large lattice-relaxed deep levels. We have determined the spectral dependence for the optical cross section and obtain an optical ionization energy of 0.83 eV.

  19. Nanostructured donor-acceptor self assembly with improved photoconductivity.

    PubMed

    Saibal, B; Ashar, A Z; Devi, R Nandini; Narayan, K S; Asha, S K

    2014-11-12

    Nanostructured supramolecular donor-acceptor assemblies were formed when an unsymmetrical N-substituted pyridine functionalized perylenebisimide (UPBI-Py) was complexed with oligo(p-phenylenevinylene) (OPVM-OH) complementarily functionalized with hydroxyl unit and polymerizable methacrylamide unit at the two termini. The resulting supramolecular complex [UPBI-Py (OPVM-OH)]1.0 upon polymerization by irradiation in the presence of photoinitiator formed well-defined supramolecular polymeric nanostructures. Self-assembly studies using fluorescence emission from thin film samples showed that subtle structural changes occurred on the OPV donor moiety following polymerization. The 1:1 supramolecular complex showed red-shifted aggregate emission from both OPV (∼500 nm) and PBI (∼640 nm) units, whereas the OPV aggregate emission was replaced by intense monomeric emission (∼430 nm) upon polymerizing the methacrylamide units on the OPVM-OH. The bulk structure was studied using wide-angle X-ray diffraction (WXRD). Complex formation resulted in distinct changes in the cell parameters of OPVM-OH. In contrast, a physical mixture of 1 mol each of OPVM-OH and UPBI-Py prepared by mixing the powdered solid samples together showed only a combination of reflections from both parent molecules. Thin film morphology of the 1:1 molecular complex as well as the supramolecular polymer complex showed uniform lamellar structures in the domain range <10 nm. The donor-acceptor supramolecular complex [UPBI-Py (OPVM-OH)]1.0 exhibited space charge limited current (SCLC) with a bulk mobility estimate of an order of magnitude higher accompanied by a higher photoconductivity yield compared to the pristine UPBI-Py. This is a very versatile method to obtain spatially defined organization of n and p-type semiconductor materials based on suitably functionalized donor and acceptor molecules resulting in improved photocurrent response using self-assembly. PMID:25283356

  20. Guiding effect of quantum wells in semiconductor lasers

    SciTech Connect

    Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N

    2013-05-31

    The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)

  1. Spatially selective photoconductive stimulation of live neurons

    PubMed Central

    Campbell, Jacob; Singh, Dipika; Hollett, Geoffrey; Dravid, Shashank M.; Sailor, Michael J.; Arikkath, Jyothi

    2014-01-01

    Synaptic activity is intimately linked to neuronal structure and function. Stimulation of live cultured primary neurons, coupled with fluorescent indicator imaging, is a powerful technique to assess the impact of synaptic activity on neuronal protein trafficking and function. Current technology for neuronal stimulation in culture include chemical techniques or microelectrode or optogenetic based techniques. While technically powerful, chemical stimulation has limited spatial resolution and microelectrode and optogenetic techniques require specialized equipment and expertise. We report an optimized and improved technique for laser based photoconductive stimulation of live neurons using an inverted confocal microscope that overcomes these limitations. The advantages of this approach include its non-invasive nature and adaptability to temporal and spatial manipulation. We demonstrate that the technique can be manipulated to achieve spatially selective stimulation of live neurons. Coupled with live imaging of fluorescent indicators, this simple and efficient technique should allow for significant advances in neuronal cell biology. PMID:24904287

  2. Picosecond photoconductivity of natural and CVD diamonds

    NASA Astrophysics Data System (ADS)

    Garnov, Serge V.; Pimenov, Sergej M.; Ralchenko, Victor G.; Klimentov, Sergei M.; Konov, Vitali I.; Korotoushenko, K. G.; Obraztsova, E. D.; Plotnikova, S. P.; Sagatelyan, D. M.; Holly, Sandor

    1995-07-01

    Photoexcitation and recombination of nonequilibrium charge carriers in both natural gemstone diamonds and CVD (chemical vapor deposition) polycrystalline diamond films in UV spectrum regions have been investigated. Transient picosecond photoconductivity technique applied permitted to conduct measurements with the time resolution better than 200 picoseconds and to register a charge carrier concentration value as low as 1020 - 1013 cm-3. The dependencies of photocurrent amplitude as a function of incident laser radiation intensity in the range from 103 to 1010 W/cm2 have been obtained. Charge carrier lifetimes had been measured and charge carrier drift mobility were estimated. It is shown that the electronic properties of high quality thick CVD diamond films are comparable to those of the most perfect natural type IIa crystals. Investigation of Raman and luminescence spectra of diamonds have been performed along with scanning electron microscopy studies to characterize bulk and surface structure of tested specimens.

  3. 6H-SiC Photoconductive Switches Triggered at Below Bandgap Wavelengths

    SciTech Connect

    Sullivan, J S; Stanley, J R

    2007-02-13

    Semi-insulating silicon carbide (SiC) is an attractive material for application as high voltage, photoconductive semiconductor switches (PCSS) due to its large bandgap, high critical electric field strength, high electron saturation velocity and high thermal conductivity. The critical field strength of 300 MV/m for 6H-SiC makes it particularly attractive for compact, high voltage, fast switching applications. To realize the benefits of the high bulk electric field strength of SiC and diffuse switch current, carriers must be excited throughout the bulk of the photo switch. Photoconducting switches with opposing electrodes were fabricated on ''a'' plane, vanadium compensated, semiinsulating, 6H-SiC substrates. The PCSS devices were switched by optically exciting deep extrinsic levels lying within the 6H-SiC bandgap. The SiC photoswitches were tested up to a bias voltage of 11000 V with a corresponding peak current of 150 A. The 6H-SiC substrates withstood average electric fields up to 27 MV/m. Minimum PCCS dynamic resistances of 2 and 10 {Omega} were obtained with 13 mJ optical pulses at 532 and 1064 nm wavelengths, respectively.

  4. In situ studies of transient photoconductivity in PbSe quantum dot solar cells

    NASA Astrophysics Data System (ADS)

    Gao, Jianbo; Koh, Weon-Kyu; Makarov, Nikolay; Pietryga, Jeffrey; Klimov, Victor

    2014-03-01

    PbSe quantum dot (QD) solar cells have attracted significant interest due to their band gap tunability, easy-processing and flexibility. Efficiencies have risen from 1% just a few years ago to nearly 9% today. Furthermore, the novel concept of multiple exciton generation (MEG) resulting from quantum confinement makes these materials scientifically interesting counterparts to bulk semiconductors. Recent observations of more than 100% external quantum efficiency in PbSe QD solar cells confirm direct relevance of MEG to practical photovoltaics. However, in order to take full advantage of this effect, one needs a better understanding of photogeneration dynamics and carrier transport in QD solar cells. In this talk, we discuss a new technique for in situ measurements of transient photoconductivity with fast response time (<50 ps) applied to study carrier transport and photogeneration dynamics in PbSe QD solar cells. These measurements complement traditional photoconductivity techniques such as time-resolved microwave conductivity and time-of-flight. Based on the analysis of temperature, excitation wavelength and electrical field dependence measurements, we derive parameters such as MEG efficiency, carrier lifetime, trap-free mobility and carrier emission rate from trap states.

  5. Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures.

    PubMed

    Khalil, Hagir M; Royall, Ben; Mazzucato, Simone; Balkan, Naci

    2012-01-01

    The low temperature photoluminescence under bias (PLb) and the photoconductivity (PC) of a p-i-n GaInNAs/GaAs multiple quantum well sample have been investigated. Under optical excitation with photons of energy greater than the GaAs bandgap, PC and PLb results show a number of step-like increases when the sample is reverse biased. The nature of these steps, which depends upon the temperature, exciting wavelength and intensity and the number of quantum wells (QWs) in the device, is explained in terms of thermionic emission and negative charge accumulation due to the low confinement of holes in GaInNAs QWs. At high temperature, thermal escape from the wells becomes much more dominant and the steps smear out. PMID:23021540

  6. Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures

    PubMed Central

    2012-01-01

    The low temperature photoluminescence under bias (PLb) and the photoconductivity (PC) of a p-i-n GaInNAs/GaAs multiple quantum well sample have been investigated. Under optical excitation with photons of energy greater than the GaAs bandgap, PC and PLb results show a number of step-like increases when the sample is reverse biased. The nature of these steps, which depends upon the temperature, exciting wavelength and intensity and the number of quantum wells (QWs) in the device, is explained in terms of thermionic emission and negative charge accumulation due to the low confinement of holes in GaInNAs QWs. At high temperature, thermal escape from the wells becomes much more dominant and the steps smear out. PMID:23021540

  7. Effects of two-photon absorption on terahertz radiation generated by femtosecond-laser excited photoconductive antennas.

    PubMed

    Lee, Chao-Kuei; Yang, Chan-Shan; Lin, Sung-Hui; Huang, Shiuan-Hua; Wada, Osamu; Pan, Ci-Ling

    2011-11-21

    Terahertz (THz) radiation can be generated more efficiently from a low-temperature-grown GaAs (LT-GaAs) photoconductive (PC) antenna by considering the two-photon absorption (TPA) induced photo-carrier in the photoconductor. A rate-equation-based approach using the Drude-Lorentz model taking into account the band-diagram of LT-GaAs is used for the theoretical analysis. The use of transform-limited pulses at the PC antenna is critical experimentally. Previously unnoticed THz pulse features and anomalously increasing THz radiation power rather than saturation were observed. These are in good agreement with the theoretical predictions. The interplay of intensity dependence and dynamics of generation of photoexcited carriers by single-photon absorption and TPA for THz emission is discussed. PMID:22109395

  8. Photoconductivity and photoconversion at a photorefractive thin crystal plate

    NASA Astrophysics Data System (ADS)

    Frejlich, Jaime; de Oliveira, Ivan; de Araujo, William R.; Carvalho, Jesiel F.; Montenegro, Renata; Georges, Marc; Fleury-Frenette, Karl

    2016-05-01

    We report on the photoconductivity and the photoelectric conversion measured on a thin photorefractive sillenite crystal plate, between transparent electrodes, in the longitudinal configuration where the current is measured along the same direction of the light beam through the sample. Its behavior is based on the already reported light-induced Schottky effect. The wavelength for optimal photoconductivity is determined. A specific parameter is formulated here for quantitatively determining the photoelectric conversion efficiency of the sandwiched material.

  9. InP and GaAs characterization with variable stoichiometry obtained by molecular spray

    NASA Technical Reports Server (NTRS)

    Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

    1979-01-01

    Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

  10. The effect of annealing on the photoconductivity of carbon nanofiber/TiO2 core-shell nanowires for use in dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Rochford, Caitlin; Li, Zhuang-Zhi; Baca, Javier; Liu, Jianwei; Li, Jun; Wu, Judy

    2010-07-01

    Electrical transport properties and photoresponse of individual TiO2-coated carbon nanofibers were studied in an attempt to elucidate the limiting factors of core-shell nanowire-based dye-sensitized solar cells (DSSC). The role of the semiconductor shell microstructure was investigated by comparing as grown and thermally annealed samples. Steady state I-V and transient photoconductivity measurements suggest that improving the microstructure leads to reduced resistivity and contact resistance, a decrease in charge traps, improved surface stoichiometry for dye adsorption, and reduced absorption of visible light by the semiconductor, all of which may improve nanowire-based DSSC performance.

  11. High-power question - will diamonds be the next GaAs

    SciTech Connect

    Manz, B.

    1988-05-01

    It is shown that, due to the outstanding properties of diamond material, diamond technology offers much promise for microwave power generation. For example, diamond exhibits high dielectric breakdown voltage (10 to the 7th V, 50 times that of conventional semiconductors such as GaAs), high thermal conductivity (20 W/cm per C, which is about four times that of Cu), a low dielectric constant (5.5, half that of GaAs), and high saturated carrier velocity (2.7 times that of GaAs, Si, or InP). Moreover, unlike GaAs, Si, or InP, the saturated carrier velocity of diamond maintains its high rate in electric fields of increasing intensity. However, the process of growing pure thin-film material is still at experimental stages. The approaches used in growing diamond by the laboratories in the U.S, USSR, and Japan are discussed.

  12. Direct Observation of the E_ Resonant State in GaAs1-xBix

    SciTech Connect

    Alberi, Kirstin; Beaton, Daniel A.; Mascarenhas, Angelo

    2015-12-15

    Bismuth-derived resonant states with T2 symmetry are detected in the valence band of GaAs1-xBix using electromodulated reflectance. A doublet is located 42 meV below the valence band edge of GaAs that is split by local strain around isolated Bi impurity atoms. A transition associated with a singlet is also observed just above the GaAs spin orbit split-off band. These states move deeper into the valence band with increasing Bi concentration but at a much slower rate than the well-known giant upward movement of the valence band edge in GaAs1-xBix. Our results provide key new insights for clarifying the mechanisms by which isovalent impurities alter the bandstructure of the host semiconductor.

  13. Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime

    NASA Astrophysics Data System (ADS)

    Jena, B.; Pradhan, K. P.; Dash, S.; Mishra, G. P.; Sahu, P. K.; Mohapatra, S. K.

    2015-09-01

    In this work the sensitivity of process parameters like channel length (L), channel thickness (tSi), and gate work function (φM) on various performance metrics of an undoped cylindrical gate all around (GAA) metal-oxide-semiconductor field effect transistor (MOSFET) are systematically analyzed. Undoped GAA MOSFET is a radical invention as it introduces a new direction for transistor scaling. In conventional MOSFET, generally the channel doping concentration is very high to provide high on-state current, but in contrary it causes random dopant fluctuation and threshold voltage variation. So, the undoped nature of GAA MOSFET solves the above complications. Hence, we have analyzed the electrical characteristics as well as the analog/RF performances of undoped GAA MOSFET through Sentaurus device simulator.

  14. Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells

    SciTech Connect

    Rumyantsev, V. V. Ikonnikov, A. V.; Antonov, A. V.; Morozov, S. V.; Zholudev, M. S.; Spirin, K. E.; Gavrilenko, V. I.; Dvoretskii, S. A.; Mikhailov, N. N.

    2013-11-15

    The spectra and relaxation kinetics of interband photoconductivity are investigated in narrow-gap Hg{sub 1-x}Cd{sub x}Te epitaxial films with x = 0.19-0.23 and in structures with HgCdTe-based quantum wells (QWs), having an interband-transition energy in the range of 30-90 meV, grown by molecular-beam epitaxy on GaAs (013) substrates. A long-wavelength sensitivity band caused by impurities or defects is found in the spectra of the structures with quantum wells in addition to the interband photoconductivity. It is shown that the lifetimes of nonequilibrium carriers in the structures with QWs is less than in bulk samples at the same optical-transition energy. From the measured carrier lifetimes, the ampere-watt responsivity and the equivalent noise power for a film with x = 0.19 at a wavelength of 19 {mu}m are estimated. When investigating the relaxation kinetics of the photoconductivity at 4.2 K in high excitation regime, it is revealed that radiative recombination is dominant over other mechanisms of nonequilibrium-carrier recombination.

  15. Effects of ultrathin oxides in conducting MIS structures on GaAs

    NASA Technical Reports Server (NTRS)

    Childs, R. B.; Ruths, J. M.; Sullivan, T. E.; Fonash, S. J.

    1978-01-01

    Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

  16. A two-dimensional model for an in-plane organic photo-conductive bilayer sensor

    NASA Astrophysics Data System (ADS)

    Woestenborghs, W.; De Visschere, P.; Beunis, F.; Neyts, K.

    2014-09-01

    In this work we present a two-dimensional (2D) model for an organic thin film photo-conductive sensor containing a planar heterojunction and in-plane electrodes. The model simulates the flow of charge carriers based on the standard one-dimensional semiconductor transport and continuity equations, and combines this with a 2D model for the electric field. This procedure results in a hybrid differential/integral equation formulation. We present and analyse simulation results that resemble very well measured current-voltage characteristics of a real sensor under different illumination levels. We find that for currents below a critical value the sensor behaves like a resistor. Above this critical current the current increases much more slowly due to space charge accumulation close to the cathode. We explain the critical current as the maximum reverse current of the solar cell formed by the heterojunction covering the cathodic electrode.

  17. Photoconductivity of composites based on CdSe quantum dots and low-band-gap polymers

    NASA Astrophysics Data System (ADS)

    Dayneko, Sergey; Linkov, Pavel; Martynov, Igor; Tameev, Alexey; Tedoradze, Marine; Samokhvalov, Pavel; Nabiev, Igor; Chistyakov, Alexander

    2016-05-01

    Photoconductivity of thin layers prepared by spin coating of blends of CdSe quantum dots (QDs) and a low-band-gap polymer PCDTBT or PTB7 has been studied. It has been found that photocurrent in the composites containing QDs of 10-nm in size is significantly higher than in those of containing 5-nm QDs. Analysis of the results showed that the photoresponse of the thin layers is mainly determined by the relative positions of the frontier energy levels of the materials used, organic semiconductors and QDs. Therefore, the ability to tune the relative positions of these levels by varying the QD size is of special importance, thus allowing the optimization of photodetectors and photovoltaic cells.

  18. Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts.

    PubMed

    Li, Liang; Auer, Erwin; Liao, Meiyong; Fang, Xiaosheng; Zhai, Tianyou; Gautam, Ujjal K; Lugstein, Alois; Koide, Yasuo; Bando, Yoshio; Golberg, Dmitri

    2011-03-01

    We designed solar-blind deep-ultraviolet semiconductor photodetectors using individual Ga2O3 nanobelts. The photoconductive behavior was systematically studied. The photodetectors demonstrate high selectivity towards 250 nm light, fast response times of less than 0.3 s, and a large photocurrent to dark current ratio of up to 4 orders of magnitude. The photoresponse parameters such as photocurrent, response time, and quantum efficiency depend strongly on the intensity of light, the detector environment, and the nanobelt size. The photoresponse mechanism was discussed, which was mainly attributed to the band bending, surface traps, and distribution of traps in the bandgap. Present Ga2O3 nanobelts can be exploited for future applications in photo sensing, light-emitting diodes, and optical switches. PMID:21203645

  19. Sub-picosecond time-resolved carrier, phonon, and spin dynamics in Cd(Mn)Te diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, D.; Sobolewski, Roman; Mycielski, A.

    2005-08-01

    We present here our research on time-resolved carrier, phonon, and spin dynamics in the diluted-magnetic semiconductor Cd1-xMnxTe [Cd(Mn)Te] system. Our test samples were the high-quality single crystals with the Mn doping concentrations ranging from 9% to 12%, grown by a modified Bridgeman method. Femtosecond optical pump-probe spectroscopy experiments allowed us to study time-resolved dynamics of both the excited carriers and coherent acoustic phonons. Using pump photons with the energy just exceeding the Cd(Mn)Te energy gap, we observed the bleaching effect as excited carriers occupied essentially all available states at the bottom of the conduction band. With the increase of the pump photon energy, the normalized differential reflectivity (ΔR/R) signal changed sign to positive, being dominated by the electron-phonon relaxation process. All our ΔR/R traces, on the delay-time scale well above 100 ps, exhibited very regular oscillations, which were identified, as the signature of coherent acoustic phonons, generated by an electronic and thermal stress introduced at the sample surface by the pump photons. We have also excited our samples with sub-picosecond magnetic transients, generated by a low-temperature-grown GaAs photoconductive switch, and observed the sub-picosecond magneto-optic (Faraday) effect (Mn-ion spin dynamics). The sub-picosecond Faraday response makes this semimagnetic semiconductor an excellent candidate for practical applications in magneto-optics, such as in time-resolved magneto-optical sampling and imaging techniques, or in ultrafast magneto-optical transducers and modulators. In addition, Cd(Mn)Te is a very promising material for ultrafast spintronic and magnetic memory-type devices.

  20. Spin-Resolved Electronic Structure of Ultrathin Epitaxial Fe Films on Vicinal and Singular GaAs(100) Substrates

    SciTech Connect

    Morton, S A; Waddill, G D; Spangenberg, M; Seddon, E A; Neal, J; Shen, T; Tobin, J G

    2003-03-10

    Recently there has been considerable interest in the study of spin injection at ferromagnetic semiconductor heterojunctions and ferromagnetic metal--semiconductor contacts. Studies of ntype semiconductors have demonstrated spin-coherent transport over large distances5 and the persistence of spin coherence over a sizeable time scale. Clearly such investigations have been stimulated by the potential of the development of ''spintronics'', electronic devices utilizing the information of the electron spin states. To understand and improve the magnetic properties of ultrathin Fe films on GaAs has been the aim of many research groups over recent years. The interest in this system has both technological and fundamental scientific motivations. Technologically, Fe on GaAs may serve to realize spin electronic devices. From a fundamental science point of view, Fe on GaAs serves as a prototype for studies of the interplay between the crystalline structure and morphology of an ultrathin film, its electronic structure and the long range magnetic order it exhibits. Furthermore, it is well known that an oxidized Cs layer on GaAs substantially alters the work-function of the GaAs surface, which plays a very important role in the application of GaAs as a spin polarized electron source.

  1. Cryogenic measurements of aerojet GaAs n-JFETs

    NASA Technical Reports Server (NTRS)

    Goebel, John H.; Weber, Theodore T.

    1993-01-01

    The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

  2. GaAs arrays for X-ray spectroscopy

    NASA Astrophysics Data System (ADS)

    Owens, Alan; Andersson, Hans; Campbell, M.; Lumb, David H.; Nenonen, Seppo A. A.; Tlustos, Lukas

    2004-09-01

    We present results from our compound semiconductor laboratory program and describe the development of a large area GaAs imaging array for planetary remote sensing applications. The device is fabricated from ~150 micron thick epitaxial material, patterned into a 64 x 64 pixel array, back-thinned and contacted. It will be flip-chip bump bonded onto a custom designed, fully spectroscopic, low noise (< 20 e- rms) active pixel sensor ASIC. At present, the ASIC is still under development and so in order to validate and qualify the various technological steps, we have produced a GaAs imager based on the MEDIPIX-1 format using a MEDIPIX-1 readout chip. In X-ray tests, the device was found to work well with a bump yield of 99.9%. After flat field corrections, the spatial uniformity of the array was commensurate with Poisson noise.

  3. Oxygen-enhanced wet thermal oxidation of GaAs

    NASA Astrophysics Data System (ADS)

    Bauters, J. F.; Fenlon, R. E.; Seibert, C. S.; Yuan, W.; Plunkett, J. S. B.; Li, J.; Hall, D. C.

    2011-10-01

    An oxygen-enhanced wet thermal oxidation process is used to grow smooth, uniform, insulating native oxides of GaAs. At 420 °C, a maximum linear growth rate of 4.8 nm/min is observed for oxidation in water vapor with 2000 ppm O2 added relative to the N2 carrier gas, with growth ceasing by 7000 ppm. Films as thick as 800 nm with surface roughness as low as 0.2 nm are demonstrated. In fabricated metal-oxide-semiconductor capacitors, a 412 nm thick native oxide film exhibits a factor of ˜2700 reduction in leakage current density at 1 V relative to a direct metal (Au:Ti) to GaAs contact.

  4. Vectorial photocurrents and photoconductivity in metalized chloroplasts

    SciTech Connect

    Greenbaum, E. )

    1990-08-09

    A novel photobiophysical phenomenon was observed in isolated spinach chloroplasts that were metalized by precipitating colloidal platinum onto the surface of the thylakoid membranes. A two-point irradiation and detection system was constructed in which a continuous-beam helium-neon laser ({lambda} = 632.8 nm) was used to irradiate the platinized chloroplasts at varying perpendicular distances (Figure 1) from a single linear platinum electrode in pressure contact with the platinized chloroplasts. No external voltage bias was applied to the system. The key objective of the experiments reported in this report was to measure the relative photoconductivity of the chloroplast-metal composite matrix. Unlike conventional photosynthetic electrochemical cells, in which irradiated chloroplasts are in close proximity to an electrode or linked to the electrode by an electrode-active mediator, the flow of photocurrent was through the biocomposite material. A sustained steady-state vectorial flow of current in the plane of the entrapped composite from the point of laser irradiation to the wire electrode was measured.

  5. Preparations of methoxynitrophenazines and their photoconductivities

    NASA Technical Reports Server (NTRS)

    Sugimoto, A.; Inoue, K.; Inoue, H.; Imoto, E.

    1985-01-01

    Eight methoxynitrophenazines with a methoxy group at the 1 or 2 position and a nitro group at the 6-, 7-, 8- or 9-position of the phenazine ring 1,6, 1,7. 1,8, 1,9, 2,6, 2,7, 2,8 and 2,9 were prepared and their photocurrents were measured by illuminating the surface-type cell with white light from a W lamp under a N atmosphere at room temp. The photocurrents of 1-nitrophenazine 6 and 2-nitrophenazine 7 are compared with those of the methoxynitrophenazines. The photocurrent (i sub p) increases with increasing light intensity (I), thus satisfying log i varies as n log I. The n values are 0.5-1.0. When the nitro group is located at the beta-position of the phenazine ring, the photocurrent becomes larger owing to the electron withdrawing property of the nitro group. On the other hand, the photocurrents of phenazines with the nitro group at the Alpha-position are extremely small. The photoconductivities of methoxynitrophenazines are lower in air.

  6. Semiconductor switch geometry with electric field shaping

    DOEpatents

    Booth, Rex; Pocha, Michael D.

    1994-01-01

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  7. Semiconductor switch geometry with electric field shaping

    DOEpatents

    Booth, R.; Pocha, M.D.

    1994-08-23

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

  8. Carrier scattering by native defects in heavily doped semiconductors

    SciTech Connect

    Walukiewicz, W. Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA )

    1990-05-15

    Calculations of the effect of charged native defects on carrier mobility in semiconductors are presented. The concentrations of native defects are calculated within the framework of the recently proposed amphoteric-native-defect model. The model provides a simple rule for identification of semiconductor systems in which defect scattering is important. It is shown that native-defect scattering is a dominant mechanism limiting electron mobilities in heavily doped {ital n}-type GaAs. It is also shown that native defects do not play any significant role in {ital p}-type GaAs.

  9. Photoconductivity and density of states in microstructural amorphous silicon

    SciTech Connect

    Budaguan, B.G.; Aivazov, A.A.; Radosel'sky, A.G.; Popov, A.A.

    1997-07-01

    It has been reported in previous works that using of RF 55 kHz PECVD method allows to deposit microstructural inhomogeneous a-Si:H films at high deposition rate (10--20{angstrom}/c) and with high photoconductivity. The structural analysis with using of IR spectroscopy and atomic force microscopy (AFM) performed in this work have shown that these films possess a relatively regular microstructure consisting of grains with characteristic size of {approximately}300--500{angstrom}. The regular microstructure of investigated films differs from inhomogeneous a-Si:H with deteriorate electronic properties. At the same time the diffraction analysis didn't reveal the presence of microcrystals. Therefore, the authors denoted their films as microstructural a-Si:H films. In this work they performed the modeling of the photoconductivity of microstructural a-Si:H films to analyze the density-of-states (DOS) responsible for recombination kinetics. For this purpose different approaches to photoconductivity modeling have been used to simulate the experimentally measured temperature dependence of photoconductivity. The comparative analysis of results of these simulations and ESR measurements have shown that recombination in high photoconductive microstructural films is controlled by deep neutral states.

  10. GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

    NASA Astrophysics Data System (ADS)

    Juang, Bor-Chau; Laghumavarapu, Ramesh B.; Foggo, Brandon J.; Simmonds, Paul J.; Lin, Andrew; Liang, Baolai; Huffaker, Diana L.

    2015-03-01

    There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm2. In addition, the cells on GaAs substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.

  11. GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

    SciTech Connect

    Juang, Bor-Chau Laghumavarapu, Ramesh B.; Foggo, Brandon J.; Lin, Andrew; Simmonds, Paul J.; Liang, Baolai; Huffaker, Diana L.

    2015-03-16

    There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAs substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.

  12. New developments in photoconductive detectors (invited)

    SciTech Connect

    Han, S.

    1997-01-01

    Nearly ideal for detecting ionizing radiation, wide band-gap semiconductors present a possibility of having outstanding radiation hardness, fast charge collection, and low leakage current that will allow them to be used in high radiation, high temperature, and chemically aggressive environments. Over the past few years, the improvements in the electrical quality of wide band-gap semiconductors have progressed enormously. One particular wide band-gap semiconductor, diamond, has properties that may be ideal for radiation detection. Since the discovery of low pressure and low temperature deposition of diamond, the possibility of large area diamond films has become a reality. Over the past few years, great progress has been made in advancing the electrical quality of chemical-vapor-deposited (CVD) diamond. Presently, unprecedented diamond wafer size of 7 in. diam is possible. Due to both the present electrical quality and the available size, the utilization of diamond in radiation detection applications is not just a dream but a reality. The progression of CVD diamond{close_quote}s electrical properties in the last few years will be presented along with what is currently possible. Applications of CVD diamond for the National Ignition Facility (NIF) diagnostics will be reviewed. In addition, a brief review concerning other possible wide band-gap semiconductors for ICF diagnostics will be presented. {copyright} {ital 1997 American Institute of Physics.}

  13. Hydrogen on semiconductor surfaces

    SciTech Connect

    Schaefer, J.A.; Balster, T.; Polyakov, V.; Rossow, U.; Sloboshanin, S.; Starke, U.; Tautz, F.S.

    1998-12-31

    The authors review structural and electronic aspects of the reaction of hydrogen with semiconductor surfaces. Among others, they address the Si(100), Ge{sub x}Si{sub 1{minus}x}(100), GaAs(100), InP(100), SiC(100), SiC(0001) and SiC(000{bar 1}) surfaces. It is demonstrated that high resolution electron energy loss spectroscopy (HREELS) in conjunction with a number of other surface sensitive techniques like low energy electron diffraction (LEED) and photoelectron spectroscopy (XPS/UPS) can yield important information about the surface atomic structure, the effects of hydrogen passivation and etching and on electronic properties of the surfaces. 67 refs., 7 figs., 3 tabs.

  14. Coexistence of negative photoconductivity and hysteresis in semiconducting graphene

    NASA Astrophysics Data System (ADS)

    Zhuang, Shendong; Chen, Yan; Xia, Yidong; Tang, Nujiang; Xu, Xiaoyong; Hu, Jingguo; Chen, Zhuo

    2016-04-01

    Solution-processed graphene quantum dots (GQDs) possess a moderate bandgap, which make them a promising candidate for optoelectronics devices. However, negative photoconductivity (NPC) and hysteresis that happen in the photoelectric conversion process could be harmful to performance of the GQDs-based devices. So far, their origins and relations have remained elusive. Here, we investigate experimentally the origins of the NPC and hysteresis in GQDs. By comparing the hysteresis and photoconductance of GQDs under different relative humidity conditions, we are able to demonstrate that NPC and hysteresis coexist in GQDs and both are attributed to the carrier trapping effect of surface adsorbed moisture. We also demonstrate that GQDs could exhibit positive photoconductivity with three-order-of-magnitude reduction of hysteresis after a drying process and a subsequent encapsulation. Considering the pervasive moisture adsorption, our results may pave the way for a commercialization of semiconducting graphene-based and diverse solution-based optoelectronic devices.

  15. Photoconductivities in MoS2 Nanoflake Photoconductors.

    PubMed

    Shen, Wei-Chu; Chen, Ruei-San; Huang, Ying-Sheng

    2016-12-01

    Photoconductivities in molybdenum disulfide (MoS2) layered nanostructures with two-hexagonal crystalline structure prepared by mechanical exfoliation were investigated. The photoconductor-type MoS2 nanoflakes exhibit remarkable photoresponse under the above bandgap excitation wavelength of 532 nm at different optical intensity. The photocurrent responsivity and photoconductive gain of nanoflakes can reach, respectively, 30 AW(-1) and 103 at the intensity of 50 Wm(-2), which are several orders of magnitude higher than those of their bulk counterparts. The vacuum-enhanced photocurrent and power-independent responsivity/gain indicate a surface-controlled photoconduction mechanism in the MoS2 nanomaterial. PMID:26935304

  16. Shallow-Lever Centers in Semiconductors - Proceedings of the 7th International Conference

    NASA Astrophysics Data System (ADS)

    Ammerlaan, C. A. J.; Pajot, B.

    1997-04-01

    Quantum Well Structures Grown by MBE * Shallow Centers in Heavily Doped Silicon Quantum Wells * Optically Detected Resonance Spectroscopy of III-V and II-VI Quantum Wells * Shallow Thermal Donor Defects in Silicon * Pressure Dependence of Se Absorption Lines in AlSb * Fine Structure in the Magnetic Resonance of Single Acceptors in Silicon * Far-Infrared Photoconductivity and Photoluminescence of Beryllium in Gallium Arsenide * Shift of Photoluminescence Peak in Highly Self-Compensated Ge-Doped GaAs * Electron-Phonon Coupling in a Delta-Doped n-i-p Structure in GaAs * Group-III and Group-II Quasi-Deep Impurities in Silicon Carbide: Electron Paramagnetic Resonance and Optically Detected Magnetic Resonance Studies * Resonance Acceptor States in Uniaxially Strained Semiconductors * Donor-Related Infrared-Absorption Spectra of GaAs-(Ga, Al)As Quantum Wells * Electrical Properties of Shallow Donor Centers Formed Due to Oxygen Interaction with Chemically Active Impurities in Heat-Treated Silicon * Fine Structure and Higher Lying Transitions of Er3+ in 4H and 6H SiC * Mechanism for the Enhanced Dissociation of C-H Complexes in GaAs * Bistability and Metastability of Hydrogen in Si * EPR of Aluminum-Aluminum Interstitial Pair in Silicon * Magnetic Order of Shallow Acceptor Centres in Semiconductors (InSb:Mn) * Luminescence and DLTS Study of Photonuclear Transmutation Doped (PND) Gallium Arsenide * Photoluminescence of Deformed Bulk Crystals of Si-Ge Alloy * Di-Oxygen Complex in Silicon: Some New Characteristic Features * Reactions of Interstitial Iron with Shallow Acceptors in Silicon * The 819.8 meV Photoluminescence Band in Copper Doped Silicon * Zeeman Spectroscopy of Aluminium in Germanium * Microscopic Studies of the Hydrogen Passivation in n-Type Silicon: A New Application of the 73As γ-e- PAC Technique * Shallow Donor Solubility Mechanism: Tellurium in GaAs * Energy Levels of Shallow Donor Pairs and Thermal Double Donors in Silicon * Boron Neutralization by Hydrogen in

  17. Investigation of the optical and electrical properties of p-type porous GaAs structure

    NASA Astrophysics Data System (ADS)

    Saghrouni, H.; Missaoui, A.; Hannachi, R.; Beji, L.

    2013-12-01

    Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily doped p-type GaAs substrate in a HF:C2H5OH solution. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-structural nature of the porous layer has been demonstrated by X-ray diffraction analysis (XRD) and confirmed by AFM. An estimation of the main size of the GaAs crystallites obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results. The porous p-GaAs samples are characterised by spectroscopic ellipsometry and modulation spectroscopy techniques. The objective of this study is to determine the porosity, refractive index, and thickness. The porosity of GaAs determined by atomic force microscopy confirmed by the value obtained from the spectroscopic ellipsometry. In fact the current-voltage I(V) characteristics of metal-semiconductor Au/p-GaAs are investigated and compared with Au/p-porous GaAs structures. From the forward bias I(V) characteristics of these devices, the main electrical parameters such as ideality factor, barrier height, and series resistance have been determined.

  18. Beam excited acoustic instability in semiconductor quantum plasmas

    SciTech Connect

    Rasheed, A.; Siddique, M.; Huda, F.; Jamil, M.; Jung, Y.-D.

    2014-06-15

    The instability of hole-Acoustic waves due to electron beam in semiconductor quantum plasmas is examined using the quantum hydrodynamic model. The quantum effects are considered including Bohm potential, Fermi degenerate pressure, and exchange potential of the semiconductor quantum plasma species. Our model is applied to nano-sized GaAs semiconductor plasmas. The variation of the growth rate of the unstable mode is obtained over a wide range of system parameters. It is found that the thermal effects of semiconductor species have significance over the hole-Acoustic waves.

  19. Epitaxial ferromagnetic thin films and heterostructures of Mn-based metallic and semiconducting compounds on GaAs

    NASA Astrophysics Data System (ADS)

    Tanaka, Masaaki

    1998-07-01

    We present two approaches to integrate magnetic materials with III-V semiconductors. One is epitaxial ferromagnetic metallic films and heterostructures on GaAs (0 0 1) substrates. Although crystal structure, lattice constant, chemical bonding and other properties are dissimilar, ferromagnetic hexagonal MnAs thin films and MnAs/NiAs ferromagnet/nonmagnet heterostructures (HSs) are grown on GaAs by molecular beam epitaxy (MBE). Multi-stepped magnetic hysteresis are controllably realized in MnAs/NiAs HSs, making this material promising for the application to multi-level nonvolatile recording on semiconductors. The other approach is to prepare a new class of GaAs based magnetic semiconductor, GaMnAs, by low-temperature molecular beam epitaxy (LT-MBE) on GaAs (0 0 1). New III-V based superlattices consisting of ferromagnetic semiconductor GaMnAs and nonmagnetic semiconductor AlAs are also successfully grown. Structural and magnetic properties of these new heterostructures are presented.

  20. Lateral photoconductivity in structures with Ge/Si quantum dots

    SciTech Connect

    Panevin, V. Yu. Sofronov, A. N.; Vorobjev, L. E.; Firsov, D. A.; Shalygin, V. A.; Vinnichenko, M. Ya.; Balagula, R. M.; Tonkikh, A. A.; Werner, P.; Fuhrman, B.; Schmidt, G.

    2013-12-15

    The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent spectral features related to the transitions of holes from the quantum dot (QD) ground state are revealed in the optical spectra. Temperature photoconductivity quenching caused by the reverse trapping of nonequilibrium free holes by the QD bound state is observed. The obtained experimental data make it possible to determine the height of the surface band bending at the QD heterointerface.

  1. Periodic surface structure bifurcation induced by ultrafast laser generated point defect diffusion in GaAs

    NASA Astrophysics Data System (ADS)

    Abere, Michael J.; Torralva, Ben; Yalisove, Steven M.

    2016-04-01

    The formation of high spatial frequency laser induced periodic surface structures (HSFL) with period <0.3 λ in GaAs after irradiation with femtosecond laser pulses in air is studied. We have identified a point defect generation mechanism that operates in a specific range of fluences in semiconductors between the band-gap closure and ultrafast-melt thresholds that produces vacancy/interstitial pairs. Stress relaxation, via diffusing defects, forms the 350-400 nm tall and ˜90 nm wide structures through a bifurcation process of lower spatial frequency surface structures. The resulting HSFL are predominately epitaxial single crystals and retain the original GaAs stoichiometry.

  2. Single crystal and polycrystalline GaAs solar cells using AMOS technology

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M.

    1976-01-01

    A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.

  3. Fracture mechanics evaluation of GaAs

    NASA Technical Reports Server (NTRS)

    Chen, C. P.

    1984-01-01

    A data base of mechanical and fracture properties for GaAs was generated. The data for single crystal GaAs will be used to design reusable GaAs solar modules. Database information includes; (1) physical property characterizations; (2) fracture behavior evaluations; and (3) strength of cells determined as a function of cell processing and material parameters.

  4. Organic donor-acceptor assemblies form coaxial p-n heterojunctions with high photoconductivity.

    PubMed

    Prasanthkumar, Seelam; Ghosh, Samrat; Nair, Vijayakumar C; Saeki, Akinori; Seki, Shu; Ajayaghosh, Ayyappanpillai

    2015-01-12

    The formation of coaxial p-n heterojunctions by mesoscale alignment of self-sorted donor and acceptor molecules, important to achieve high photocurrent generation in organic semiconductor-based assemblies, remains a challenging topic. Herein, we show that mixing a p-type π gelator (TTV) with an n-type semiconductor (PBI) results in the formation of self-sorted fibers which are coaxially aligned to form interfacial p-n heterojunctions. UV/Vis absorption spectroscopy, powder X-ray diffraction studies, atomic force microscopy, and Kelvin-probe force microscopy revealed an initial self-sorting at the molecular level and a subsequent mesoscale self-assembly of the resulted supramolecular fibers leading to coaxially aligned p-n heterojunctions. A flash photolysis time-resolved microwave conductivity (FP-TRMC) study revealed a 12-fold enhancement in the anisotropic photoconductivity of TTV/PBI coaxial fibers when compared to the individual assemblies of the donor/acceptor molecules. PMID:25430809

  5. Instantaneous amplitude and frequency dynamics of coherent wave mixing in semiconductor quantum wells

    SciTech Connect

    Chemla, D.S.

    1993-06-30

    This article reviews recent investigations of nonlinear optical processes in semiconductors. Section II discusses theory of coherent wave mixing in semiconductors, with emphasis on resonant excitation with only one exciton state. Section III reviews recent experimental investigations of amplitude and phase of coherent wave-mixing resonant with quasi-2d excitons in GaAs quantum wells.

  6. Nonlinear optical interactions in semiconductors

    NASA Astrophysics Data System (ADS)

    Salour, M. M.

    1985-12-01

    The optical pumping technique in GaAs has led to the development of a novel and highly sensitive optical temperature sensor. Completed is the experiment on two photon optical pumping in ZnO. An external cavity semiconductor laser involving ZnO as a gain medium was demonstrated under two-photon excitation. This laser should have a major impact on the development of tunable blue-green radiation for submarine communication. Completed is a paper on heat buildup in semiconductor platelets. New lasers are used to explore elementary excitation in optical thin film layers of semiconductors. This has led to the first demonstration of the feasibility of room temperature operation of a tunable coherent source involving multiple quantum well material. Completed is the construction of a simple remote (non-contact) temperature sensor to directly measure heat buildup in semiconductor materials as a result of high power optical laser excitation. Finally, an experiment involving optical frequency mixing to probe electrodynamics in the GaAlAs multiple quantumwell and superlattice structures, utilizing two recently constructed tunabel laser systems,has been successful. Attempts were focused on observing a number of new optical effects including nonlinear absorption and transmission phenomena, enhanced spontaneous and stimulated light scattering processes, etc. The construction of an external cavity semiconductor HgCdTe has been successful.

  7. Glad nanostructured arrays with enhanced carrier collection and light trapping for photoconductive and photovoltaic device applications

    NASA Astrophysics Data System (ADS)

    Cansizoglu, Hilal

    Solar energy harvesting has been of great interest for researchers over the past 50 years. Main emphasis has been on developing high quality materials with low defect density and proper band gaps. However, high cost of bulk materials and insufficient light absorption in thin films led to utilization of semiconductor nanostructures in photovoltaics and photonics. Light trapping abilities of nanostructures can provide high optical absorption whereas core/shell nanostructured arrays can allow enhanced charge carrier collection. However, most of the nanofabrication methods that can produce uniform nanostructure geometries are limited in materials, dimensions, and not compatible with industrial production systems. Therefore, it is essential to develop innovative low-cost fabrication approaches that can address these issues. The primary goal of this project is to investigate light trapping and carrier collection properties of glancing angle deposited (GLAD) nanostructured arrays for high-efficiency, low-cost photoconductive and photovoltaic devices using characterization techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), ultraviolet-visible-near infrared (UV-vis-NIR) spectroscopy and time resolved photocurrent measurements. Indium sulfide (In2S3) has been chosen as a model material system in this study. GLAD nanostructured arrays of vertical rods, screws, springs, zigzags and tilted rods were fabricated and characterized. A strong dependence of optical absorption on the shapes of nanostructures is observed from UV-vis-NIR spectroscopy. A simulation study using finite difference time domain (FDTD) shows that introducing 3D geometry results in diffuse scattering of light and leads to high optical absorption. Monte Carlo simulations were conducted to determine a simple and scalable fabrication technique for conformal and uniform shell coatings. The results suggest that an atomic flux with angular distribution, which can be

  8. Electron Spin Dynamics in Semiconductor Quantum Dots

    SciTech Connect

    Marie, X.; Belhadj, T.; Urbaszek, B.; Amand, T.; Krebs, O.; Lemaitre, A.; Voisin, P.

    2011-07-15

    An electron spin confined to a semiconductor quantum dot is not subject to the classical spin relaxation mechanisms known for free carriers but it strongly interacts with the nuclear spin system via the hyperfine interaction. We show in time resolved photoluminescence spectroscopy experiments on ensembles of self assembled InAs quantum dots in GaAs that this interaction leads to strong electron spin dephasing.

  9. Coexistence of electron-glass phase and persistent photoconductivity in GeSbTe compounds

    NASA Astrophysics Data System (ADS)

    Ovadyahu, Z.

    2015-03-01

    It is demonstrated that persistent photoconductivity (PPC), well studied in lightly-doped semiconductors, is observable in GeSbTe compounds using infrared excitation at cryogenic temperatures. The low levels of energy flux necessary to induce an appreciable effect seems surprising given the high carrier concentration n of these ternary alloys (n >1020cm-3 ). On the other hand, their high density of carriers makes GeSbTe films favorable candidates for exhibiting intrinsic electron-glass effects with long relaxation times. These are indeed observed in GeSbTe thin films that are Anderson-localized. In particular, a memory dip is observed in samples with sheet resistances larger than ≈105Ω at T ≈4 K with similar characteristics as in other systems that exhibit intrinsic electron-glass effects. Persistent photoconductivity, however, is observable in GeSbTe films even for sheet resistances of the order of 103Ω , well below the range of disorder required for observing electron-glass effects. These two nonequilibrium phenomena, PPC and electron glass, are shown to be of different nature in terms of other aspects as well. In particular, their relaxation dynamics is qualitatively different; the excess conductance Δ G associated with PPC decays with time as a stretched exponential whereas a logarithmic relaxation law characterizes Δ G (t ) of all electron glasses studied to date. Surprisingly, the magnitude of the memory dip is enhanced when the system is in the PPC state. This counter-intuitive result may be related to the compositional disorder in these materials extending over mesoscopic scales. Evidence in support of this scenario is presented and discussed.

  10. Mechanism of Fermi-level stabilization in semiconductors

    SciTech Connect

    Walukiewicz, W.

    1988-03-15

    A striking correlation between the Fermi-level in heavily radiation damaged semiconductors and at metal-semiconductor interfaces is presented. The correlation provides critical evidence supporting the defect model for Schottky-barrier formation. The Fermi-level energy for both situations corresponds to the average energy of the sp/sup 3/ hybrid. In the case of GaAs, a detailed description of the Fermi-level stabilization caused by amphoteric dangling-bond-like defects is given

  11. Cathodoluminescence characterization of ion implanted GaAs

    NASA Astrophysics Data System (ADS)

    Cone, M. L.

    1980-03-01

    The unique properties of GaAs make it possible to construct integrated circuit devices that are impossible in Si. The Air Force Avionics Laboratory/AADR has been developing this technology for a number of years. The difficulty of introducing dopants by diffusion has lead ion implantation to play an increasing role in the fabrication process. The present production technique for high performance devices is to fabricate large quantities and select those few that meet the desired specifications. Having a nondestructive technique that can be used to characterize the implantation process during fabrication of the device so as to reject faulty device structures can save valuable time as well as money. Depth-resolved cathodoluminescence is a process that can be used for this purpose. This research develops and verifies a model of cathodoluminescence in ion implanted GaAs. This model can now be used as a tool for further study of ion implanted GaAs. This is the first step in developing cathodoluminescence as a tool for deducing the shape of the ion implanted depth profile in semiconductor materials.

  12. Artificial graphene in nanopatterned GaAs Quantum Wells

    NASA Astrophysics Data System (ADS)

    Wang, Sheng; Scarabelli, Diego; Levy, Antonio; Pfeiffer, Loren; West, Ken; Pellegrini, Vittorio; Manfra, Michael J.; Wind, Shalom; Pinczuk, Aron

    2015-03-01

    Electrons in graphene have linear energy-momentum dispersion, making them massless Dirac fermions. An alternative way to achieve massless Dirac-fermions in a controlled and tunable manner is to construct a honeycomb lattice potential for a 2D electron gas in a semiconductor quantum well. We report realization of very short period (as small as 40 nm) honeycomb lattice pattern using e-beam lithography and drying etching on a GaAs quantum well and spectroscopy data of electron states under this potential modulation. The study is carried out using photoluminescence and light scattering at low temperature (about 4K). Inter mini-band transitions are observed by resonant inelastic light scattering and interpreted with calculated mini-band structure. Control over parameters such as Fermi level should permit manipulation of massless fermions. This will provide a platform for novel behavior such as topological states in a semiconductor quantum simulator. Supported by DOE-BES Award DE-SC0010695.

  13. Metal nanoparticles triggered persistent negative photoconductivity in silk protein hydrogels

    NASA Astrophysics Data System (ADS)

    Gogurla, Narendar; Sinha, Arun K.; Naskar, Deboki; Kundu, Subhas C.; Ray, Samit K.

    2016-03-01

    Silk protein is a natural biopolymer with intriguing properties, which are attractive for next generation bio-integrated electronic and photonic devices. Here, we demonstrate the negative photoconductive response of Bombyx mori silk protein fibroin hydrogels, triggered by Au nanoparticles. The room temperature electrical conductivity of Au-silk hydrogels is found to be enhanced with the incorporation of Au nanoparticles over the control sample, due to the increased charge transporting networks within the hydrogel. Au-silk lateral photoconductor devices show a unique negative photoconductive response under an illumination of 325 nm, with excitation energy higher than the characteristic metal plasmon resonance band. The enhanced photoconductance yield in the hydrogels over the silk protein is attributed to the photo-oxidation of amino groups in the β-pleated sheets of the silk around the Au nanoparticles followed by the breaking of charge transport networks. The Au-silk nanocomposite does not show any photoresponse under visible illumination because of the localization of excited charges in Au nanoparticles. The negative photoconductive response of hybrid Au-silk under UV illumination may pave the way towards the utilization of silk for future bio-photonic devices using metal nanoparticle platforms.

  14. GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy.

    PubMed

    Guan, X; Becdelievre, J; Meunier, B; Benali, A; Saint-Girons, G; Bachelet, R; Regreny, P; Botella, C; Grenet, G; Blanchard, N P; Jaurand, X; Silly, M G; Sirotti, F; Chauvin, N; Gendry, M; Penuelas, J

    2016-04-13

    We have studied the growth of a SrTiO3 shell on self-catalyzed GaAs nanowires grown by vapor-liquid-solid assisted molecular beam epitaxy on Si(111) substrates. To control the growth of the SrTiO3 shell, the GaAs nanowires were protected using an arsenic capping/decapping procedure in order to prevent uncontrolled oxidation and/or contamination of the nanowire facets. Reflection high energy electron diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy were performed to determine the structural, chemical, and morphological properties of the heterostructured nanowires. Using adapted oxide growth conditions, it is shown that most of the perovskite structure SrTiO3 shell appears to be oriented with respect to the GaAs lattice. These results are promising for achieving one-dimensional epitaxial semiconductor core/functional oxide shell nanostructures. PMID:27008537

  15. (GaMn)As: GaAs-based III?V diluted magnetic semiconductors grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hayashi, T.; Tanaka, M.; Nishinaga, T.; Shimada, H.; Tsuchiya, H.; Otuka, Y.

    1997-05-01

    We have grown novel III-V diluted magnetic semiconductors, (Ga 1 - xMn x)As, on GaAs substrates by low-temperature molecular beam epitaxy using strong nonequilibrium growth conditions. When the Mn concentration x is relatively low (≲0.08), homogeneous alloy semiconductors, GaMnAs, are grown with zincblende structure and slightly larger lattice constants than that of GaAs, whereas inhomogeneous structures with zincblende GaMnAs (or GaAs) plus hexagonal MnAs are formed when x is relatively high. Magnetization measurements indicate that the homogeneous GaMnAs films have ferromagnetic ordering at low temperature.

  16. Two-photon passive electro-optic upconversion in a GaAs /AlGaAs heterostructure device

    NASA Astrophysics Data System (ADS)

    Zhao, Lai; Thompson, Pete; Faleev, N. N.; Prather, D. W.; Appelbaum, Ian

    2007-03-01

    A semiconductor heterostructure device that requires no external power source to upconvert two low-energy photons into one higher-energy photon is proposed. This passive device is fabricated in the AlGaAs /GaAs material system and it is used to demonstrate photon upconversion from 808to710nm at room temperature.

  17. Photoconductivities from band states and a dissipative electron dynamics: Si(111) without and with adsorbed Ag clusters

    NASA Astrophysics Data System (ADS)

    Vazhappilly, Tijo; Hembree, Robert H.; Micha, David A.

    2016-01-01

    A new general computational procedure is presented to obtain photoconductivities starting from atomic structures, combining ab initio electronic energy band states with populations from density matrix theory, and implemented for a specific set of materials based on Si crystalline slabs and their nanostructured surfaces without and with adsorbed Ag clusters. The procedure accounts for charge mobility in semiconductors in photoexcited states, and specifically electron and hole photomobilities at Si(111) surfaces with and without adsorbed Ag clusters using ab initio energy bands and orbitals generated from a generalized gradient functional, however with excited energy levels modified to provide correct bandgaps. Photoexcited state populations for each band and carrier type were generated using steady state solution of a reduced density matrix which includes dissipative medium effects. The present calculations provide photoexcited electronic populations and photoinduced mobilities resulting from applied electric fields and obtained from the change of driven electron energies with their electronic momentum. Extensive results for Si slabs with 8 layers, without and with adsorbed Ag clusters, show that the metal adsorbates lead to substantial increases in the photomobility and photoconductivity of electrons and holes.

  18. Photoconductivities from band states and a dissipative electron dynamics: Si(111) without and with adsorbed Ag clusters.

    PubMed

    Vazhappilly, Tijo; Hembree, Robert H; Micha, David A

    2016-01-14

    A new general computational procedure is presented to obtain photoconductivities starting from atomic structures, combining ab initio electronic energy band states with populations from density matrix theory, and implemented for a specific set of materials based on Si crystalline slabs and their nanostructured surfaces without and with adsorbed Ag clusters. The procedure accounts for charge mobility in semiconductors in photoexcited states, and specifically electron and hole photomobilities at Si(111) surfaces with and without adsorbed Ag clusters using ab initio energy bands and orbitals generated from a generalized gradient functional, however with excited energy levels modified to provide correct bandgaps. Photoexcited state populations for each band and carrier type were generated using steady state solution of a reduced density matrix which includes dissipative medium effects. The present calculations provide photoexcited electronic populations and photoinduced mobilities resulting from applied electric fields and obtained from the change of driven electron energies with their electronic momentum. Extensive results for Si slabs with 8 layers, without and with adsorbed Ag clusters, show that the metal adsorbates lead to substantial increases in the photomobility and photoconductivity of electrons and holes. PMID:26772554

  19. Polariton-impurity interactions and photoconductivity in CdTe studied by cyclotron-resonance-excitation spectroscopy

    NASA Astrophysics Data System (ADS)

    Lavigne, B.; Cox, R. T.

    1991-05-01

    A technique called cyclotron-resonance-excitation spectroscopy has been used to obtain photoconductivity spectra for crystals of the II-VI compound semiconductor CdTe. A 35-GHz electron-spin-resonance spectrometer is used to detect the cyclotron resonance of free carriers created by 680-785-nm laser excitation at 2 K. The cyclotron-resonance signal consists of two major components, attributed to high-mobility electrons (μ>105 cm2/V s) in n-type regions and to lower-mobility electrons (or possibly light holes) in compensated regions of the sample. Persistent photoconductivity effects are observed. The excitation spectrum (i.e., the laser wavelength dependence of the cyclotron-resonance signal) is studied with emphasis on the ~=15-meV-wide excitonic region just below the band-gap energy (1.606 eV). Strong peaks in this region of the spectrum demonstrate that carriers are generated more efficiently just below the band gap than above it. Dips occur in the spectrum at the 1s and 2s exciton energies. Two carrier-generation mechanisms are proposed for the excitonic region: (a) inelastic polariton scattering off neutral donors, ionizing the donors and (b) annihilation of polaritons by ionized acceptors, neutralizing the acceptors. Properties of importance in determining the polariton-impurity interactions are the two-branch polariton dispersion relation, the excitonic content of the polariton wave function, and the polariton group velocity and kinetic energy.

  20. THz wave emission of GaAs induced by He+ ion implantation

    NASA Astrophysics Data System (ADS)

    Yang, Kang; Cao, Jianqing; Huang, Can; Ji, Te; Zhang, Zengyan; Liu, Qi; Wu, Shengwei; Lin, Jun; Zhao, Hongwei; Zhu, Zhiyong

    2013-07-01

    Semi-Insulating Gallium Arsenide (SI-GaAs) was implanted with 1.5 MeV He+ ions and THz photoconductive antenna (PCA) was prepared on the implanted SI-GaAs surface. The antenna was applied as the THz wave emission source of a terahertz time domain spectroscopy (THz-TDS) and the THz wave emission ability was studied as a function of the implantation dose. It is found that the THz signal intensity increases with increase of implantation dose, and after reaching to a peak value the THz signal intensity decreases with further implantation. The best THz emission ability was achieved at a dose value between 1 × 1015 and 1 × 1016 ions/cm2. It is believed that the implantation induced defects in the 1 μm-thick surface area are responsible for the enhanced THz emission ability. The work proved that better THz photoconductive antenna than that made by low-temperature-grown GaAs (LT-GaAs) can be produced through He-ion implantation at proper dose.

  1. Growth and properties of crystalline barium oxide on the GaAs(100) substrate

    SciTech Connect

    Yasir, M.; Dahl, J.; Lång, J.; Tuominen, M.; Punkkinen, M. P. J.; Laukkanen, P. Kokko, K.; Kuzmin, M.; Korpijärvi, V.-M.; Polojärvi, V.; Guina, M.

    2013-11-04

    Growing a crystalline oxide film on III-V semiconductor renders possible approaches to improve operation of electronics and optoelectronics heterostructures such as oxide/semiconductor junctions for transistors and window layers for solar cells. We demonstrate the growth of crystalline barium oxide (BaO) on GaAs(100) at low temperatures, even down to room temperature. Photoluminescence (PL) measurements reveal that the amount of interface defects is reduced for BaO/GaAs, compared to Al{sub 2}O{sub 3}/GaAs, suggesting that BaO is a useful buffer layer to passivate the surface of the III-V device material. PL and photoemission data show that the produced junction tolerates the post heating around 600 °C.

  2. Electrical characterization of GaAs single crystal in direct support of M555 flight experiment

    NASA Technical Reports Server (NTRS)

    Castle, J. G.

    1975-01-01

    The exploration of several nondestructive methods of electrical characterization of semiconductor single crystals was carried out during the period ending May 1974. Two methods of obtaining the microwave skin depth, one for the mapping flat surfaces and the other for analyzing the whole surface of small single crystal wafers, were developed to the stage of working laboratory procedures. The preliminary 35 GHz data characterizing the two types of space-related single crystal surfaces, flat slices of gallium arsenide and small wafers of germanium selenide, are discussed. A third method of nondestructive mapping of donor impurity density in semiconductor surfaces by scanning with a light beam was developed for GaAs; its testing indicates reasonable precision at reasonable scan rates for GaAs surfaces at room temperature.

  3. Electrical characterization of GaAs single crystal in direct support of M555 flight experiment

    NASA Technical Reports Server (NTRS)

    Castle, J. G.

    1975-01-01

    An exploration of several nondestructive methods of electrical characterization of semiconductor single crystals was carried out. Two methods of obtaining the microwave skin depth, one for mapping flat surfaces and the other for analyzing the whole surface of small single crystal wafers, were developed to the stage of working laboratory procedures. The preliminary 35 GHz data characterizing the two types of space related single crystal surfaces, flat slices of gallium arsenide and small wafers of germanium selenide, are discussed. A third method of nondestructive mapping of donor impurity density in semiconductor surfaces by scanning with a light beam was developed for GaAs; its testing indicates reasonable precision at reasonable scan rates for GaAs surfaces at room temperature.

  4. High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures.

    PubMed

    Lee, Sung-Min; Kwong, Anthony; Jung, Daehwan; Faucher, Joseph; Biswas, Roshni; Shen, Lang; Kang, Dongseok; Lee, Minjoo Larry; Yoon, Jongseung

    2015-10-27

    Due to their favorable materials properties including direct bandgap and high electron mobilities, epitaxially grown III-V compound semiconductors such as gallium arsenide (GaAs) provide unmatched performance over silicon in solar energy harvesting. Nonetheless, their large-scale deployment in terrestrial photovoltaics remains challenging mainly due to the high cost of growing device quality epitaxial materials. In this regard, reducing the thickness of constituent active materials under appropriate light management schemes is a conceptually viable option to lower the cost of GaAs solar cells. Here, we present a type of high efficiency, ultrathin GaAs solar cell that incorporates bifacial photon management enabled by techniques of transfer printing to maximize the absorption and photovoltaic performance without compromising the optimized electronic configuration of planar devices. Nanoimprint lithography and dry etching of titanium dioxide (TiO2) deposited directly on the window layer of GaAs solar cells formed hexagonal arrays of nanoscale posts that serve as lossless photonic nanostructures for antireflection, diffraction, and light trapping in conjunction with a co-integrated rear-surface reflector. Systematic studies on optical and electrical properties and photovoltaic performance in experiments, as well as numerical modeling, quantitatively describe the optimal design rules for ultrathin, nanostructured GaAs solar cells and their integrated modules. PMID:26376087

  5. High-efficiency thin-film GaAs solar cells, phase2

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.

    1981-01-01

    Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

  6. Fermi level dependent native defect formation: Consequences for metal--semiconductor and semiconductor--semiconductor interfaces

    SciTech Connect

    Walukiewicz, W.

    1988-07-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration.

  7. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    SciTech Connect

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs.

  8. Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures

    SciTech Connect

    Kozlov, D. V. Rumyantsev, V. V.; Morozov, S. V.; Kadykov, A. M.; Varavin, V. S.; Mikhailov, N. N.; Dvorestky, S. A.; Gavrilenko, V. I.; Teppe, F.

    2015-12-15

    The photoconductivity (PC) spectra of CdHgTe (MCT) solid solutions with a Cd fraction of 17 and 19% are measured. A simple model for calculating the states of doubly charged acceptors in MCT solid solutions, which makes it possible to describe satisfactorily the observed photoconductivity spectra, is proposed. The found lines in the photoconductivity spectra of narrow-gap MCT structures are associated with transitions between the states of both charged and neutral acceptor centers.

  9. Terahertz line detection by a microlens array coupled photoconductive antenna array.

    PubMed

    Pradarutti, B; Müller, R; Freese, W; Matthäus, G; Riehemann, S; Notni, G; Nolte, S; Tünnermann, A

    2008-10-27

    We present THz ultrashort pulse detection by a photoconductive antenna array consisting of 16 photoconductive antennas. The efficient excitation of the photoconductive antennas has been realized by a microlens array which generates 16 single spots from the exciting fs-laser beam. This combination of optoelectronics and microoptics improves the detection efficiency by an order of magnitude in comparison to an excitation by a line focus. PMID:18958123

  10. Reduced photoconductivity observed by time-resolved terahertz spectroscopy in metal nanofilms with and without adhesion layers

    NASA Astrophysics Data System (ADS)

    Alberding, Brian G.; Kushto, Gary P.; Lane, Paul A.; Heilweil, Edwin J.

    2016-05-01

    Non-contact, optical time-resolved terahertz spectroscopy has been used to study the transient photoconductivity of nanometer-scale metallic films deposited on the fused quartz substrates. Samples of 8 nm thick gold or titanium show an instrument-limited (ca. 0.5 ps) decrease in conductivity following photoexcitation due to electron-phonon coupling and subsequent increased lattice temperatures which increases charge carrier scattering. In contrast, for samples of 8 nm gold with a 4 nm adhesion layer of titanium or chromium, a ca. 70 ps rise time for the lattice temperature increase is observed. These results establish the increased transient terahertz transmission sign change of metallic compared to semiconductor materials. The results also suggest nanoscale gold films that utilize an adhesion material do not consist of distinct layers.

  11. Persistent Photoconductivity in A Magnetic Two Dimensional Electron Gas

    NASA Astrophysics Data System (ADS)

    Ray, O.; Smorchkova, I. P.; Samarth, N.

    1998-03-01

    Magnetic two-dimensional electron gases (2DEGs) based on modulation-doped (Zn,Cd,Mn)Se/ZnSe heterostructures are of current interest because of their novel transport properties (PRL 78, 3571 (1997)). Here, we examine the phenomenon of persistent photoconductivity (PPC) in these structures, with the aim of understanding the nature of defects and their role in limiting the 2DEG mobility. We have observed significant PPC at high temperatures in modulation doped magnetic 2DEGs. The clear presence of a deep trap responsible for the observed PPC is established through temperature-dependent photoconductivity, photoluminescence, deep level transient fourier spectroscopy and photo induced current transient spectroscopy. An analysis of these experiments will be presented, summarizing the specific characteristics and possible origins of this deep level.

  12. Photoconductivities in anatase TiO{sub 2} nanorods

    SciTech Connect

    Chen, Ruei-San; Liu, Yi-Ling; Chan, Ching-Hsiang; Huang, Ying-Sheng

    2014-10-13

    The photoconduction (PC) properties of single-crystalline titanium dioxide (TiO{sub 2}) nanorods (NRs) with anatase phase were investigated and compared. By examining the material's inherent properties, the anatase TiO{sub 2} NRs exhibit superior PC efficiency (quantitatively defined by normalized gain) which is near one order of magnitude higher than that of the rutile ones. The optimal photoconductive gain of the anatase NR device can also reach 1.6 × 10{sup 7} at the light intensity of 0.02 Wm{sup −2} and a low bias of 0.1 V. The power-dependent and time-resolved PC measurements were performed to investigate the physical mechanisms. The higher quantum efficiency and mobility product was confirmed to be responsible for the higher PC efficiency in the anatase TiO{sub 2} NRs in comparison to the rutile ones.

  13. Hybrid Computational Simulation and Study of Terahertz Pulsed Photoconductive Antennas

    NASA Astrophysics Data System (ADS)

    Emadi, R.; Barani, N.; Safian, R.; Nezhad, A. Zeidaabadi

    2016-08-01

    A photoconductive antenna (PCA) has been numerically investigated in the terahertz (THz) frequency band based on a hybrid simulation method. This hybrid method utilizes an optoelectronic solver, Silvaco TCAD, and a full-wave electromagnetic solver, CST. The optoelectronic solver is used to find the accurate THz photocurrent by considering realistic material parameters. Performance of photoconductive antennas and temporal behavior of the excited photocurrent for various active region geometries such as bare-gap electrode, interdigitated electrodes, and tip-to-tip rectangular electrodes are investigated. Moreover, investigations have been done on the center of the laser illumination on the substrate, substrate carrier lifetime, and diffusion photocurrent associated with the carriers temperature, to achieve efficient and accurate photocurrent. Finally, using the full-wave electromagnetic solver and the calculated photocurrent obtained from the optoelectronic solver, electromagnetic radiation of the antenna and its associated detected THz signal are calculated and compared with a measurement reference for verification.

  14. Persistent Photoconductivity Studies in Nanostructured ZnO UV Sensors

    PubMed Central

    2009-01-01

    The phenomenon of persistent photoconductivity is elusive and has not been addressed to an extent to attract attention both in micro and nanoscale devices due to unavailability of clear material systems and device configurations capable of providing comprehensive information. In this work, we have employed a nanostructured (nanowire diameter 30–65 nm and 5 μm in length) ZnO-based metal–semiconductor–metal photoconductor device in order to study the origin of persistent photoconductivity. The current–voltage measurements were carried with and without UV illumination under different oxygen levels. The photoresponse measurements indicated a persistent conductivity trend for depleted oxygen conditions. The persistent conductivity phenomenon is explained on the theoretical model that proposes the change of a neutral anion vacancy to a charged state. PMID:20652149

  15. Photoconductive Cathode Interlayer for Highly Efficient Inverted Polymer Solar Cells.

    PubMed

    Nian, Li; Zhang, Wenqiang; Zhu, Na; Liu, Linlin; Xie, Zengqi; Wu, Hongbin; Würthner, Frank; Ma, Yuguang

    2015-06-10

    A highly photoconductive cathode interlayer was achieved by doping a 1 wt % light absorber, such as perylene bisimide, into a ZnO thin film, which absorbs a very small amount of light but shows highly increased conductivity of 4.50 × 10(-3) S/m under sunlight. Photovoltaic devices based on this kind of photoactive cathode interlayer exhibit significantly improved device performance, which is rather insensitive to the thickness of the cathode interlayer over a broad range. Moreover, a power conversion efficiency as high as 10.5% was obtained by incorporation of our photoconductive cathode interlayer with the PTB7-Th:PC71BM active layer, which is one of the best results for single-junction polymer solar cells. PMID:26016386

  16. Persistent photoconductivity in n-type GaN

    SciTech Connect

    Hirsch, M.T.; Wolk, J.A.; Walukiewicz, W.; Haller, E.E.

    1997-08-01

    We report on the spectral and temperature dependence of persistent photoconductivity (PPC) in metal-organic chemical vapor deposition grown unintentionally doped n-type GaN. The PPC effect is detectable up to temperatures of at least 352 K, the highest temperature used in this study. At 77 K, the conduction persists at a level 80{percent} higher than the equilibrium dark conduction for over 10{sup 4} s after removing the excitation. We have determined the spectral dependence for the optical cross section for PPC and obtain an optical ionization energy of {approximately}2.7 eV. The temperature dependence of the photoconductivity decay and its nonexponential shape are explained by a distribution of capture barriers with a mean capture barrier of 0.2 eV and a width of {approximately}26 meV. {copyright} {ital 1997 American Institute of Physics.}

  17. Nanowires and Nanobelts: Volume 1, Metal and Semiconductor Nanowires

    NASA Astrophysics Data System (ADS)

    Wang, Zhong Lin

    This two volume reference, Nanowires and Nanobelts: Materials, Properties and Devices, provides a comprehensive introduction to the field and reviews the current state of the research. Volume 1, Metal and Semiconductor Nanowires covers a wide range of materials systems, from noble metals (such as Au, Ag, Cu), single element semiconductors (such as Si and Ge), compound semiconductors (such as InP, CdS and GaAs as well as heterostructures), nitrides (such as GaN and Si3N4) to carbides (such as SiC).

  18. An introduction to the development of the semiconductor laser

    NASA Astrophysics Data System (ADS)

    Dupuis, Russell D.

    1987-06-01

    The experimental and theoretical work that preceded the first demonstration of semiconductor injection lasers in 1962 is reviewed. It is noted that John von Neumann in his 1953 manuscript was the first to treat the idea of a semiconductor light amplifier in a substantially correct way. The most important event, however, was the achievement of high-efficiency electroluminescence from GaAs p-n junctions reported in 1962. Several independent studies on the concept of a semiconductor laser or maser conducted in the middle and late 1950's and early 1960's and some theoretical and experimental papers published on the subject of injection laser operation in 1962 are briefly discussed.

  19. Shallow-Lever Centers in Semiconductors - Proceedings of the 7th International Conference

    NASA Astrophysics Data System (ADS)

    Ammerlaan, C. A. J.; Pajot, B.

    1997-04-01

    Quantum Well Structures Grown by MBE * Shallow Centers in Heavily Doped Silicon Quantum Wells * Optically Detected Resonance Spectroscopy of III-V and II-VI Quantum Wells * Shallow Thermal Donor Defects in Silicon * Pressure Dependence of Se Absorption Lines in AlSb * Fine Structure in the Magnetic Resonance of Single Acceptors in Silicon * Far-Infrared Photoconductivity and Photoluminescence of Beryllium in Gallium Arsenide * Shift of Photoluminescence Peak in Highly Self-Compensated Ge-Doped GaAs * Electron-Phonon Coupling in a Delta-Doped n-i-p Structure in GaAs * Group-III and Group-II Quasi-Deep Impurities in Silicon Carbide: Electron Paramagnetic Resonance and Optically Detected Magnetic Resonance Studies * Resonance Acceptor States in Uniaxially Strained Semiconductors * Donor-Related Infrared-Absorption Spectra of GaAs-(Ga, Al)As Quantum Wells * Electrical Properties of Shallow Donor Centers Formed Due to Oxygen Interaction with Chemically Active Impurities in Heat-Treated Silicon * Fine Structure and Higher Lying Transitions of Er3+ in 4H and 6H SiC * Mechanism for the Enhanced Dissociation of C-H Complexes in GaAs * Bistability and Metastability of Hydrogen in Si * EPR of Aluminum-Aluminum Interstitial Pair in Silicon * Magnetic Order of Shallow Acceptor Centres in Semiconductors (InSb:Mn) * Luminescence and DLTS Study of Photonuclear Transmutation Doped (PND) Gallium Arsenide * Photoluminescence of Deformed Bulk Crystals of Si-Ge Alloy * Di-Oxygen Complex in Silicon: Some New Characteristic Features * Reactions of Interstitial Iron with Shallow Acceptors in Silicon * The 819.8 meV Photoluminescence Band in Copper Doped Silicon * Zeeman Spectroscopy of Aluminium in Germanium * Microscopic Studies of the Hydrogen Passivation in n-Type Silicon: A New Application of the 73As γ-e- PAC Technique * Shallow Donor Solubility Mechanism: Tellurium in GaAs * Energy Levels of Shallow Donor Pairs and Thermal Double Donors in Silicon * Boron Neutralization by Hydrogen in

  20. Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

    1994-01-01

    Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

  1. Persistent photoconductivity study in AlGaN superlattice

    NASA Astrophysics Data System (ADS)

    Wang, Li-wei; Xu, Jin-tong; Wang, Nili; Xu, Peng-xiao; Li, Xiangyang

    2014-11-01

    The transport properties of GaN and its alloys are attracting increasing interest due to the potential application of these materials for solar blind photodetectors and high mobility transistors. Because of the large band gap, the applications of AlxGa1-xN are extensive, such as for visible-blind ultraviolet detectors, laser diodes, and short-wave light emitting diodes (LEDs). However, the persistent photoconductivity (PPC) of GaN based photoconductive devices affects its applications. In order to study the origin of PPC, we designed solar blind ultraviolet photoconductive detector, which consists of n - Al0.65Ga0.35N top contact layer (100nm), n-Al0.42Ga0.58N/i-Al0.65Ga0.35N superlattice layers (200nm), i- Al0.65Ga0.35N layer (600nm), AlN buffer layer and double polished sapphire substrate. Moreover, there are photoconductive devices with different photosensitive areas. Investigations of electric-field effects and thermal effects on PPC in n-Al0.42Ga0.58N/i-Al0.65Ga0.35N superlattice are presented. We have observed that, by applying a high-voltage pulse, the course of PPC was effectively accelerated: With the same pulse width and different voltage, in the appropriate range, the higher of the voltage, the course of PPC was more effectively accelerated; with the same voltage and different pulse width, in the appropriate range, the wider of the pulse width, the course of PPC was more effectively accelerated. And PPC effect strongly depends on the temperature. The decay time of the PPC depend on the temperature and become longer with a decreasing temperature.

  2. Radiation-induced extrinsic photoconductivity in Li-doped Si.

    NASA Technical Reports Server (NTRS)

    Fenimore, E.; Mortka, T.; Corelli, J. C.

    1972-01-01

    Investigation of the effects of lithium on radiation-produced complexes having long-time stability by examining the localized energy levels in the forbidden gap which give rise to extrinsic photoconductivity. The levels are found to disappear and in some cases shift with annealing in the 100-450 C temperature range. Due to the complexity of the system and the present lack of adequate theory, no complete analysis of the data obtained could be made.

  3. Method and system for photoconductive detector signal correction

    DOEpatents

    Carangelo, R.M.; Hamblen, D.G.; Brouillette, C.R.

    1992-08-04

    A corrective factor is applied so as to remove anomalous features from the signal generated by a photoconductive detector, and to thereby render the output signal highly linear with respect to the energy of incident, time-varying radiation. The corrective factor may be applied through the use of either digital electronic data processing means or analog circuitry, or through a combination of those effects. 5 figs.

  4. Method and system for photoconductive detector signal correction

    DOEpatents

    Carangelo, Robert M.; Hamblen, David G.; Brouillette, Carl R.

    1992-08-04

    A corrective factor is applied so as to remove anomalous features from the signal generated by a photoconductive detector, and to thereby render the output signal highly linear with respect to the energy of incident, time-varying radiation. The corrective factor may be applied through the use of either digital electronic data processing means or analog circuitry, or through a combination of those effects.

  5. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  6. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  7. Plasmon enhanced photoconduction in porphyrin-gold nanoparticle assemblies

    NASA Astrophysics Data System (ADS)

    Conklin, David J.

    2011-07-01

    This thesis describes a series of experiments to both determine the origins of charge transport and enhanced photoconduction in metal nanoparticle arrays linked with zinc-porphyrin complexes, but to also determine the nucleation and growth mechanisms related to Ferroelectric Nanolithography (FNL) as a platform for hybrid devices. The development of test structures on glass substrates was undertaken to not only allow the study of the mechanisms controlling charge transport but the photoconduction of zinc-porphyrin linked gold nanoparticle (AuNP) arrays. In this study, the dominate charge transport mechanism was determined to be thermally assisted tunneling and the origins of enhanced photoconduction in these systems was attributed to three mechanisms: direct exciton formation in the molecules, hot electrons and a field effect (optical antenna) due to the excitation of surface plasmons. In the hope of developing a platform for hybrid devices, FNL was utilized to systematically vary the parameters that effect the deposition of metal nanoparticles through domain directed deposition on ferroelectric surfaces. The nucleation and growth mechanisms were determined through this work, where the integrated photon flux controlled the particle density and the interface between the particle and the ferroelectric surface determined the particles size. Finally, with the ability to control the deposition of AuNPs on a ferroelectric surface, hybrid devices of zinc-porphyrin linked AuNPs were realized with FNL.

  8. Semiconductor processing

    NASA Technical Reports Server (NTRS)

    1982-01-01

    The primary thrust of the semiconductor processing is outlined. The purpose is to (1) advance the theoretical basis for bulk growth of elemental and compound semiconductors in single crystal form, and (2) to develop a new experimental approaches by which semiconductor matrices with significantly improved crystalline and chemical perfection can be obtained. The most advanced approaches to silicon crystal growth is studied. The projected research expansion, directed toward the capability of growth of 4 inch diameter silicon crystals was implemented. Both intra and interdepartmental programs are established in the areas of process metallurgy, heat transfer, mass transfer, and systems control. Solutal convection in melt growth systems is also studied.

  9. Carbon doping of III-V compound semiconductors

    SciTech Connect

    Moll, A.J.

    1994-09-01

    Focus of the study is C acceptor doping of GaAs, since C diffusion coefficient is at least one order of magnitude lower than that of other common p-type dopants in GaAs. C ion implantation results in a concentration of free holes in the valence band < 10% of that of the implanted C atoms for doses > 10{sup 14}/cm{sup 2}. Rutherford backscattering, electrical measurements, Raman spectroscopy, and Fourier transform infrared spectroscopy were amonth the techniques used. Ga co-implantation increased the C activation in two steps: first, the additional radiation damage creates vacant As sites that the implanted C can occupy, and second, it maintains the stoichiometry of the implanted layer, reducing the number of compensating native defects. In InP, the behavior of C was different from that in GaAs. C acts as n-type dopant in the In site; however, its incorporation by implantation was difficult to control; experiments using P co-implants were inconsistent. The lattice position of inactive C in GaAs in implanted and epitaxial layers is discussed; evidence for formation of C precipitates in GaAs and InP was found. Correlation of the results with literature on C doping in III-V semiconductors led to a phenomenological description of C in III-V compounds (particularly GaAs): The behavior of C is controlled by the chemical nature of C and the instrinsic Fermi level stabilization energy of the material.

  10. Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer

    SciTech Connect

    Dementyev, P. A.; Dunaevskii, M. S. Samsonenko, Yu. B.; Cirlin, G. E.; Titkov, A. N.

    2010-05-15

    A technique for measurement of longitudinal current-voltage characteristics of semiconductor nanowhiskers remaining in contact with the growth surface is suggested. The technique is based on setting up a stable conductive contact between the top of a nanowhisker and the probe of an atomic-force microscope. It is demonstrated that, as the force pressing the probe against the top of the nanowhisker increases, the natural oxide layer covering the top is punctured and a direct contact between the probe and the nanowhisker body is established. In order to prevent nanowhiskers from bending and, ultimately, breaking, they need to be somehow fixed in space. In this study, GaAs nanowhiskers were kept fixed by partially overgrowing them with a GaAs layer. To isolate nanowhiskers from the matrix they were embedded in, they were coated by a nanometer layer of AlGaAs. Doping of GaAs nanowhiskers with silicon was investigated. The shape of the current-voltage characteristics obtained indicates that introduction of silicon leads to p-type conduction in nanowhiskers, in contrast to n-type conduction in bulk GaAs crystals grown by molecular-beam epitaxy. This difference is attributed to the fact that the vapor-liquid-solid process used to obtain nanowhiskers includes a final stage of liquid-phase epitaxy, a characteristic of the latter being p-type conduction obtained in bulk GaAs(Si) crystals.

  11. Mechanisms of current flow in metal-semiconductor ohmic contacts

    SciTech Connect

    Blank, T. V. Gol'dberg, Yu. A.

    2007-11-15

    Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed.

  12. Fabrication and characterization of GaAs/A1GaAs quantum-well lasers using thermally oxidized A1GaAs

    NASA Astrophysics Data System (ADS)

    Homan, Otte J.; Epler, John E.; Patterson, Bruce D.; Lehmann, Hans W.

    1994-07-01

    Aluminum-oxide thermally grown into high Al-concentration AlxGa1-xAs layers has recently been studied extensively. The material shows electrical and optical properties that make it useful in a semiconductor laser fabrication process where it can provide electrical isolation and optical guiding, as well as simplify the fabrication and integration process considerably. We use this thermal oxide to produce GaAs/AlGaAs semiconductor lasers that can be integrated with other devices. The GaAs cap- layer is masked with photoresist and the exposed GaAs areas are etched away, leaving a GaAs oxidation mask on the AlGaAs upper cladding layer. Using N2 carrier gas saturated with H2O vapor, the uncovered Al0.8Ga0.2As material is converted into a stable aluminum-oxide at temperatures around 450 degree(s)C. Due to the near-isotropic oxidation an `ellipsoidal' diffusion front is created, which is in strong contrast to the well-known mesa cross-section in conventional dry-etched ridge-waveguides but is more similar to e.g. wet-etched buried heterostruture lasers.

  13. High density semiconductor nanodots by direct laser fabrication

    NASA Astrophysics Data System (ADS)

    Haghizadeh, Anahita; Yang, Haeyeon

    2016-03-01

    We report a direct method of fabricating high density nanodots on the GaAs(001) surfaces using laser irradiations on the surface. Surface images indicate that the large clumps are not accompanied with the formation of nanodots even though its density is higher than the critical density above which detrimental large clumps begin to show up in the conventional Stranski-Krastanov growth technique. Atomic force microscopy is used to image the GaAs(001) surfaces that are irradiated by high power laser pulses interferentially. The analysis suggests that high density quantum dots be fabricated directly on semiconductor surfaces.

  14. Origin of enhanced photocatalytic activity and photoconduction in high aspect ratio ZnO nanorods.

    PubMed

    Leelavathi, A; Madras, Giridhar; Ravishankar, N

    2013-07-14

    Faceted ZnO nanorods with different aspect ratios were synthesized by a solvothermal method by tuning the reaction time. Increased reaction leads to the formation of high aspect ratio ZnO nanorods largely bound by the prism planes. The high aspect ratio rods showed significantly higher visible light photocatalytic activity when compared to the lower aspect ratio structures. It is proposed that the higher activity is due to better charge separation in the elongated 1D structure. In addition, the fraction of unsaturated Zn(2+) sites is higher on the {1010} facets, leading to better adsorption of oxygen-containing species. These species enhance the production of reactive radicals that are responsible for photodegradation. The photocurrent for these ZnO nanostructures under solar light was measured and a direct correlation between photocurrent and aspect ratio was observed. Since the underlying mechanisms for photodegradation and photocurrent generation are directly related to the efficiency of electron-hole creation and separation, this observation corroborates that the charge separation processes are indeed enhanced in the high aspect ratio structures. The efficiency of photoconduction (electron-hole pair separation) could be further improved by attaching Au nanoparticles on ZnO, which can act as a sink for the electrons. This heterostructure exhibits a high chemisorption of oxygen, which facilitates the production of highly reactive radicals contributing to the high photoreactivity. The suggested mechanisms are applicable to other n-type semiconductor nanostructures with important implications for applications relating to energy and the environment. PMID:23694926

  15. Atomic hydrogen cleaning of semiconductor photocathodes

    SciTech Connect

    Sinclair, C.K.; Poelker, B.M.; Price, J.S.

    1997-06-01

    Negative Electron Affinity (NEA) semiconductor photocathodes are widely used for the production of polarized electron beams, and are also useful for the production of high brightness electron beams which can be modulated at very high frequencies. Preparation of an atomically clean semiconductor surface is an essential step in the fabrication of a NEA photocathode. This cleaning step is difficult for certain semiconductors, such as the very thin materials which produce the highest beam polarization, and those which have tightly bound oxides and carbides. Using a small RF dissociation atomic hydrogen source, the authors have reproducibly cleaned GaAs wafers which have been only degreased prior to installation in vacuum. They have consistently prepared very high quantum efficiency photocathodes following atomic hydrogen cleaning. Details of their apparatus and most recent results are presented.

  16. First-principles calculations for the structural and electronic properties of GaAs1-xPx nanowires

    NASA Astrophysics Data System (ADS)

    Mohammad, Rezek; Katırcıoğlu, Şenay

    2016-09-01

    Structural stability and electronic properties of GaAs1-xPx (0.0≤x≤1.0) nanowires (NWs) in zinc-blende (ZB) (˜5≤ diameter ≤˜21Å) and wurtzite (WZ) (˜5≤diameter≤˜29Å) phases are investigated by first-principles calculations based on density functional theory (DFT). GaAs (x=0.0) and GaP (x=1.0) compound NWs in WZ phase are found energetically more stable than in ZB structural ones. In the case of GaAs1-xPx alloy NWs, the energetically favorable phase is found size and composition dependent. All the presented NWs have semiconductor characteristics. The quantum size effect is clearly demonstrated for all GaAs1-xPx (0.0≤x≤1.0) NWs. The band gaps of ZB and WZ structural GaAs compound NWs with ˜10≤ diameter ≤˜21Å and ˜5≤diameter≤˜29Å, respectively are enlarged by the addition of concentrations of phosphorus for obtaining GaAs1-xPx NWs proportional to the x values around 0.25, 0.50 and 0.75.

  17. Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

    NASA Technical Reports Server (NTRS)

    Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

    1993-01-01

    We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

  18. Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

    SciTech Connect

    Aleshkin, V. Ya.; Afonenko, A. A.; Dikareva, N. V.; Dubinov, A. A. Kudryavtsev, K. E.; Morozov, S. V.; Nekorkin, S. M.

    2013-11-15

    The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

  19. Advanced 3-V semiconductor technology assessment

    NASA Technical Reports Server (NTRS)

    Nowogrodzki, M.

    1983-01-01

    Components required for extensions of currently planned space communications systems are discussed for large antennas, crosslink systems, single sideband systems, Aerostat systems, and digital signal processing. Systems using advanced modulation concepts and new concepts in communications satellites are included. The current status and trends in materials technology are examined with emphasis on bulk growth of semi-insulating GaAs and InP, epitaxial growth, and ion implantation. Microwave solid state discrete active devices, multigigabit rate GaAs digital integrated circuits, microwave integrated circuits, and the exploratory development of GaInAs devices, heterojunction devices, and quasi-ballistic devices is considered. Competing technologies such as RF power generation, filter structures, and microwave circuit fabrication are discussed. The fundamental limits of semiconductor devices and problems in implementation are explored.

  20. Vibrational, mechanical, and thermal properties of III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Dow, John D.

    1989-02-01

    Theories of the mechanical, vibrational, and electronic properties of 3 to 5 semiconductors were developed and applied to: (1) help determine the feasibility of InN-based visible and ultraviolet lasers and light detectors, (2) develop a theory of phonons in semiconductor alloys, (3) understand surface reconstruction of semiconductors, (4) predict the effects of atomic correlations on the light-scattering (Raman) properties of semiconductive alloys, (5) develop a new first principles pseudo-function implementation of local-density theory, (6) study the oxidation of GaAs, (7) develop a theory of scanning tunneling microscope images, and (8) understand the electronic and optical properties of highly strained artificial semiconductors and small semiconductor particles.

  1. Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling

    SciTech Connect

    Aleshkin, V. Ya. Morozov, S. V.; Rumyantsev, V. V.; Tuzov, I. V.

    2015-01-15

    Experimental investigation of the time dependence of impurity photoconductivity in n-GaAs is carried out upon pulsed optical excitation. It is shown that a change in the photoconductivity is determined mainly by electron cooling in the first 20 ns after photoexcitation. A theoretical model for describing the dependences under observation is proposed.

  2. Holographic recording medium employing a photoconductive layer and a low molecular weight microcrystalline polymeric layer

    NASA Technical Reports Server (NTRS)

    Gange, Robert Allen (Inventor)

    1977-01-01

    A holographic recording medium comprising a conductive substrate, a photoconductive layer and an electrically alterable layer of a linear, low molecular weight hydrocarbon polymer has improved fatigue resistance. An acrylic barrier layer can be interposed between the photoconductive and electrically alterable layers.

  3. Hall effect and photoconductivity lifetime studies of gallium nitride, indium nitride, and mercury cadmium telluride

    NASA Astrophysics Data System (ADS)

    Swartz, Craig H.

    A deep understanding of both carrier recombination and transport is necessary for semiconductor engineering, particularly in defining the ultimate limits of performance for a given device before spending the resources to perfect its fabrication. Hall effect measurements utilizing a variable magnetic field are necessary to discriminate between conduction in epitaxial layers and conduction originating at the surface or at an interfacial layer. For thick hydride vapor phase epitaxy (HVPE) grown GaN, variable field Hall measurements revealed the presence of small but significant lower mobility surface and interface electrons which would otherwise lead to errors in interpreting the electrical properties. In addition, QMSA analysis of the measurements indicates that thick GaN samples contain a large spread in electron mobility values, most likely with depth. For molecular beam epitaxial InN, it was found that electrical measurements are affected by surface charge conduction, as well as the non-uniformity of mobility and carrier concentration with depth. Both of these effects mask the surprisingly high quality of the material close to the surface. Photoconductance lifetime and variable-magnetic-field Hall and transient measurements were performed on a series of undoped, In-doped and As-doped HgCdTe grown by MBE and MOCVD. N-type layers often significantly influence the interpretation of the electrical measurements. Even the best Low Wavelength Infrared (LWIR) n-type material still appears to be dominated by defect-related recombination, as intrinsic lifetimes calculated with full band structure can be well above those measured. Mid-Wavelength Infrared (MWIR) lifetimes increase somewhat with carrier concentration, as if the n-type doping process were passivating Schockley-Read-Hall (SRH) defects. P-type MWIR films lie mainly below the predicted values, and their relationship between concentration and lifetime is essentially unchanged by growth technique, indicating that a

  4. GaAs solar cell development

    NASA Technical Reports Server (NTRS)

    Knechtli, R. C.; Kamath, S.; Loo, R.

    1977-01-01

    The motivation for developing GaAs solar cells is based on their superior efficiency when compared to silicon cells, their lower degradation with increasing temperature, and the expectation for better resistance to space radiation damage. The AMO efficiency of GaAs solar cells was calculated. A key consideration in the HRL technology is the production of GaAs cells of large area (greater than 4 sg cm) at a reasonable cost without sacrificing efficiency. An essential requirement for the successful fabrication of such cells is the ability to grow epitaxially a uniform layer of high quality GaAs (buffer layer) on state-of-the-art GaAs substrates, and to grow on this buffer layer the required than layer of (AlGa)As. A modified infinite melt liquid phase epitaxy (LPE) growth technique is detailed.

  5. Computational study of ridge states in GaAs nanopillars

    NASA Astrophysics Data System (ADS)

    Yu, Ted H.; Ratsch, Christian

    2015-08-01

    Semiconductor nanopillars have unique geometries that make them very promising materials for a variety of devices. In order to improve their performance, we need to understand how they are affected by ridge states that lie on the six corners of the nanopillar hexagon. Although the GaAs nanopillars are primarily zinc blende (ABC), stacking faults of wurtzite (AB) stacking occur. We use density-functional theory to study stacking faults using one-dimensional periodic geometries that have a combination of zinc blende and wurtzite stacking. In contrast to perfect zinc blende nanopillars, energetically favorable midgap ridge states created by stacking faults are found in these geometries using density-functional theory. The calculated band diagrams and densities of state help us to understand how these midgap states lead to a reduced mobility and carrier localization. We also study how sulfur passivation affects and potentially improves the performance by modifying the ridges.

  6. The binding energies of a bulged GaAs nanowire

    NASA Astrophysics Data System (ADS)

    Zamani, A.; Estabar, Th.; Safarpour, Gh.; Moradi, M.

    2014-12-01

    As it is well-known the electronic structure of the semiconductor nanostructures are so sensitive to alteration of confinement while the nanostructure morphology often determines the confinement. Accordingly existence of a bulge on the wire surface will affect the features of the nanowire. In the present work we consider an on-center hydrogenic donor impurity in a GaAs nanowire with bulge. The ground and first excited states energy levels as well as their binding energies are calculated as functions of bulge and nanowire radius. It is found that both the energy levels and binding energies are strongly influenced by the bulge size for ultrafine nanowires. For large wire radii the effects of bulge existence is trivial and the electronic properties of the system approach to those of the simple nanowire.

  7. Review of terahertz semiconductor sources

    NASA Astrophysics Data System (ADS)

    Wei, Feng

    2012-03-01

    Terahertz (THz) technology can be used in information science, biology, medicine, astronomy, and environmental science. THz sources are the key devices in THz applications. The author gives a brief review of THz semiconductor sources, such as GaAs1-xNx Gunn-like diodes, quantum wells (QWs) negative-effective-mass (NEM) THz oscillators, and the THz quantum cascade lasers (QCLs). THz current self-oscillation in doped GaAs1-xNx diodes driven by a DC electric field was investigated. The current self-oscillation is associated with the negative differential velocity effect in the highly nonparabolic conduction band of this unique material system. The current self-oscillations and spatiotemporal current patterns in QW NEM p+pp+ diodes was studied by considering scattering contributions from impurities, acoustic phonons, and optic phonons. It is indicated that both the applied bias and the doping concentration strongly influence the patterns and self-oscillating frequencies. The NEM p+pp+ diode may be used as an electrically tunable THz source. Meanwhile, by using the Monte Carlo method, the device parameters of resonant-phonon THz QCLs were optimized. The results show that the calculated gain is more sensitive to the injection barrier width, the doping concentration, and the phonon extraction level separation, which is consistent with the experiments.

  8. Quantifying coherent and incoherent cathodoluminescence in semiconductors and metals

    SciTech Connect

    Brenny, B. J. M.; Coenen, T.; Polman, A.

    2014-06-28

    We present a method to separate coherent and incoherent contributions to cathodoluminescence from bulk materials by using angle-resolved cathodoluminescence spectroscopy. Using 5 and 30 keV electrons, we measure the cathodoluminescence spectra for Si, GaAs, Al, Ag, Au, and Cu and determine the angular emission distributions for Al, GaAs, and Si. Aluminium shows a clear dipolar radiation profile due to coherent transition radiation, while GaAs shows incoherent luminescence characterized by a Lambertian angular distribution. Silicon shows both transition radiation and incoherent radiation. From the angular data, we determine the ratio between the two processes and decompose their spectra. This method provides a powerful way to separate different radiative cathodoluminescence processes, which is useful for material characterization and in studies of electron- and light-matter interaction in metals and semiconductors.

  9. X-ray-induced persistent photoconductivity in vanadium dioxide

    SciTech Connect

    Dietze, S. H.; Marsh, M. J.; Wang, Siming; Ramírez, J. -G.; Cai, Z. -H.; Mohanty, J. R.; Schuller, Ivan K.; Shpyrko, O. G.

    2014-10-08

    The resistivity of vanadium dioxide (VO2) decreased by over one order of magnitude upon localized illumination with x rays at room temperature. Despite this reduction, the structure remained in the monoclinic phase and had no signature of the high-temperature tetragonal phase that is usually associated with the lower resistance. Once illumination ceased, relaxation to the insulating state took tens of hours near room temperature. However, a full recovery of the insulating state was achieved within minutes by thermal cycling. We show that this behavior is consistent with random local-potential fluctuations and random distribution of discrete recombination sites used to model residual photoconductivity.

  10. Optical modulation of persistent photoconductivity in ZnO nanowires

    SciTech Connect

    Wang Yao; Liao Zhaoliang; Chen Dongmin; She Guangwei; Mu Lixuan; Shi Wensheng

    2011-05-16

    In this study, ZnO nanowires (ZNWs)-based optoelectric devices are found to exhibit strong persistent photoconductivity (PPC) effect. An optical modulation on the PPC effect of the ZNWs with 980 nm infrared (IR) laser has been investigated. It was found that the decay time for the PPC can be significantly shortened by IR irradiation. The modulation mechanism related with the oxygen vacancies and the subband gap excitation is proposed. Based on this mechanism, the modulation behavior of the IR can be well explained. The present optical modulation on the PPC is suggested to have potential applications in enhancing the performance of ZnO-based photodetectors.

  11. Photoconductivity in ZnSe under high electric fields

    SciTech Connect

    Cho, P.S.; Ho, P.T.; Goldhar, J.; Lee, C.H. . Dept. of Electrical Engineering)

    1994-06-01

    High voltage photoconductive switches utilizing polycrystalline ZnSe were investigated. Experiments have been performed on polycrystalline ZnSe switches in a longitudinal geometry. Electrodes of perforated metal films, a transparent liquid electrolyte, plasma, and ultraviolet-light-generated carriers were used. High-bias fields of up to 100 kV/cm and current densities over 100 kA/cm[sup 2] can be applied to the polycrystalline ZnSe switches. Nonlinear effects were observed at high fields with near band edge illumination. Applications of these effects are discussed.

  12. The research on the optimum working conditions of photoconductive antenna

    NASA Astrophysics Data System (ADS)

    Shi, Wei; Dai, Yang; Zhang, Like; Yang, Lei; Yan, Zhijin; Chen, Suguo; Hou, Lei

    2015-11-01

    The photoconductive antenna (PCA) is one of the most common devices to generate terahertz (THz) wave, whose radiation efficiency is largely determined by the working conditions. In order to improve the power of THz wave, the influence of pump laser and bias voltage on the intensity of the THz wave radiated by PCA was studied through experiment and the optimum working conditions of PCA was obtained through the theoretical analysis, these are the maximum safe voltage and saturated laser energy. Only under the optimum conditions can the signal-to-noise ratio(SNR)of THz wave radiated by PCA be the highest and the PCA would not breakdown.

  13. Persistent photoconductivity in neutron irradiated GaN

    NASA Astrophysics Data System (ADS)

    Minglan, Zhang; Ruixia, Yang; Naixin, Liu; Xiaoliang, Wang

    2013-09-01

    Unintentionally doped GaN films grown by MOCVD were irradiated with neutrons at room temperature. In order to investigate the influence of neutron irradiation on the optical properties of GaN films, persistent photoconductivity (PPC) and low temperature photoluminescence (PL) measurements were carried out. Pronounced PPC was observed in the samples before and after neutron irradiation without the appearance of a yellow luminescence (YL) band in the PL spectrum, suggesting that the origin of PPC and YL are not related. Moreover, PPC phenomenon was enhanced by neutron irradiation and quenched by the followed annealing process at 900 °C. The possible origin of PPC is discussed.

  14. Transparent ceramic photo-optical semiconductor high power switches

    DOEpatents

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  15. A method of studying the photoelectric properties of liquid semiconductors

    SciTech Connect

    Aivazov, A.A.; Budagyan, B.G.; Giorgadze, A.L.

    1985-09-01

    The authors propose a way of measuring the optical and photoelectric properties of liquid semiconductors. They have developed a high temperature apparatus with cuvettes that allow sufficient material to be loaded for heat treating the melt over the whole range of measurement temperatures. After fusion and heat treatment for 30 min, the melt is fed into the working chamber by the pressure exerted by the inert gas. The optical and photoeletric parameters are measured from the melt. This method has been used to measure the steady-state longitudinal photoconductivity of liquid selenium.

  16. Photoelectrolytic production of hydrogen using semiconductor electrodes

    NASA Technical Reports Server (NTRS)

    Byvik, C. E.; Walker, G. H.

    1976-01-01

    Experimental data for the photoelectrolytic production of hydrogen using GaAs photoanodes was presented. Four types of GaAs anodes were investigated: polished GaAs, GaAs coated with gold, GaAs coated with silver, and GaAs coated with tin. The maximum measured efficiency using a tungsten light source was 8.9 percent for polished GaAs electrodes and 6.3 percent for tin coated GaAs electrodes.

  17. Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

    SciTech Connect

    Oh, Hoon Jung; Choi, Kyu Jin; Loh, Wei Yip; Htoo, Thwin; Chua, Soo Jin; Cho, Byung Jin

    2007-09-01

    A GaAs defect-free epitaxial layer has been grown on Si via a Ge concentration graded SiGe on insulator (SGOI) for application in high channel-mobility metal-oxide-semiconductor field effect transistor. The SGOI layer, 42 nm thick, serves as the compliant and intermediate buffer to reduce the lattice and thermal expansion mismatches between Si and GaAs. A modified two-step Ge condensation technique achieves the surface Ge concentration in SGOI as high as 71%. It is also found that low-temperature migration enhanced epitaxy during the initial GaAs nucleation on the SGOI surface is critical to obtain a device quality GaAs layer by epitaxial growth.

  18. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

    DOEpatents

    Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

    2001-01-01

    A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

  19. Macromodel for exact computation of propagation delay time in GaAs and CMOS technologies

    NASA Astrophysics Data System (ADS)

    Garcia, Jose C.; Montiel-Nelson, Juan A.; Sosa, Javier; Navarro, Hector; Sarmiento, Roberto

    2003-04-01

    A new transient macromodel for the cells used in DCFL GaAs and CMOS digital design is introduced in this paper. The numerical solution determines accurate propagation delay times. The macromodel is based on the differential equation for the output voltage in terms of currents and capacitances. An straightforward treatment of the differential equation for an inverter in DCFL GaAs and CMOS has been obtained. It could be resolved numerically by a 4th order Runge Kutta method. Good agreement is obtained between the HSPICE simulation and the computation of the propagation delays for DCFL GaAs and CMOS basic gates: INV, NOR, OR and NAND. There is no error between HSPICE and our computation of propagation delay time for the high to low (tphl) and low to high (tplh) transitions. The propagation delay times for two types of transition were measured and compared with HSPICE. The results demonstrate that our approach matches with HSPICE with no error. The numerical method was programmed in C language. In addition, computation time analysis is provided and numerical solution is several orders of magnitude faster than HSPICE. Work is in progress to obtain the macromodel of a standard cell library for digital application both for a 0.6 microns E/D GaAs process (H-GaAsIV) from Vitesse Semiconductor and for a 0.18 microns logic/mixed-signal CMOS process (1P6M) from TSMC Corp.

  20. Measurement of Young's modulus of GaAs nanowires growing obliquely on a substrate

    SciTech Connect

    Alekseev, P. A. Dunaevskii, M. S.; Stovpyaga, A. V.; Lepsa, M.; Titkov, A. N.

    2012-05-15

    A convenient and fast method for measuring Young's modulus of semiconductor nanowires obliquely standing on the growth substrate is presented. In this method, the nanowire is elastically bent under the force exerted by the probe of an atomic-force microscope, and the load-unload dependences for the bending of the probe cantilever are recorded. Next, these curves are used to find the bending stiffness of the tilted nanowires, after which, taking into account the nanowire dimensions, Young's modulus is obtained. The implementation of this method is demonstrated for tilted GaAs nanowires growing on a GaAs (111) substrate. Young's modulus is determined by applying finite-element analysis to the problem of the stationary elastic bending of a nanowire taking into account the actual nanowire shape and faceting. It proves that a fairly accurate estimate of Young's modulus can be obtained even if the nanowire shape is approximated by a circular cylinder with a single cross-sectional area. The values of Young's modulus obtained for GaAs nanowires of cubic lattice symmetry are 2 to 3 times smaller than its value for bulk GaAs. This difference is attributed to the presence of stacking faults in the central part of the nanowires.

  1. The role of proximity caps during the annealing of UV-ozone oxidized GaAs

    SciTech Connect

    Ghosh, S. C.; Biesinger, M. C.; LaPierre, R. R.; Kruse, P.

    2007-06-01

    This study provides a deeper insight into the chemistry and physics of the common engineering practice of using a proximity cap, while annealing compound semiconductors such as GaAs. We have studied the cases of a GaAs proximity cap, a Si proximity cap, and no proximity cap. Using x-ray photoelectron spectroscopy, it has been found that annealing increases the gallium to arsenic ratio in the oxide layer in all cases. During the annealing of UV-ozone oxidized GaAs, it has been observed that GaAs proximity caps also serve as a sacrificial layer to accelerate the desorption of oxide species. In all cases surface deterioration due to pit formation has been observed, and the depth of pits is found to depend on the effective role played by the capping material. Energy dispersive x-ray analysis provides additional evidence that pits mainly consist of elemental As and gallium oxide, with most of the elemental As situated at the pit-substrate interface. Deposition of a thin layer of gold and subsequent annealing to 500 deg. C for 300 s under different capping conditions shows the use of a proximate cap to be practically insignificant in annealing Au deposited films.

  2. Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors

    NASA Astrophysics Data System (ADS)

    Lee, Kangho; Lu, Gang; Facchetti, Antonio; Janes, David B.; Marks, Tobin J.

    2008-03-01

    Control of semiconductor interface state density with molecular passivation is essential for developing conduction-based biosensors. In this study, GaAs junction field effect transistors (JFETs) are fabricated and characterized before and after passivation of the GaAs surface with self-assembled mono- and multilayers. The JFETs functionalized with 1-octadecanethiol monolayers and two types of self-assembled organic nanodielectric (SAND) multilayers exhibit significantly different threshold voltage (Vth) and subthreshold slope (Ssub) characteristics versus the unpassivated devices and provide useful information on the quality of the passivation. Two-dimensional device simulations quantify the effective density of fixed surface charges and interfacial traps and argue for the importance of the type-III SAND ionic charges in enhancing GaAs JFET response characteristics.

  3. Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures

    SciTech Connect

    Berkovits, V. L. L'vova, T. V.; Ulin, V. P.

    2011-12-15

    The effect of chemical nitridation of GaAs substrates in a hydrazine-sulfide solution on the electrical characteristics of Au/GaAs Schottky structures has been studied. In nitridation of this kind, a solid passivating gallium nitride film with a monolayer thickness is formed on the surface of GaAs, providing almost direct contact between the semiconductor and the metal deposited on its surface. Au/GaAs structures fabricated on nitride substrates have ideality factors close to unity and are characterized by a narrow scatter of potential barrier heights. Prolonged heating of these structures at 350 Degree-Sign C does not change these parameters. The data obtained show that the nitride monolayer formed on the GaAs surface upon treatment in hydrazidesulfide solutions effectively hinders atomic migration across the metal-semiconductor phase boundary.

  4. III-V GaAs based plasmonic lasers (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Lafone, Lucas; Nguyen, Ngoc; Clarke, Ed; Fry, Paul; Oulton, Rupert F.

    2015-09-01

    Plasmonics is a potential route to new and improved optical devices. Many predict that sub wavelength optical systems will be essential in the development of future integrated circuits, offering the only viable way of simultaneously increasing speed and reducing power consumption. Realising this potential will be contingent on the ability to exploit plasmonic effects within the framework of the established semiconductor industry and to this end we present III-V (GaAs) based surface plasmon laser platform capable of effective laser light generation in highly focussed regions of space. Our design utilises a suspended slab of GaAs with a metallic slot printed on top. Here, hybridisation between the plasmonic mode of the slot and the photonic mode of the slab leads to the formation of a mode with confinement and loss that can be adjusted through variation of the slot width alone. As in previous designs the use of a hybrid mode provides strong confinement with relatively low losses, however the ability to print the metal slot removes the randomness associated with device fabrication and the requirement for etching that can deteriorate the semiconductor's properties. The deterministic fabrication process and the use of bulk GaAs for gain make the device prime for practical implementation.

  5. Improvement of the interface quality during thermal oxidation of Al0.98Ga0.02As layers due to the presence of low-temperature-grown GaAs

    NASA Astrophysics Data System (ADS)

    Ferrer, J. C.; Liliental-Weber, Z.; Reese, H.; Chiu, Y. J.; Hu, E.

    2000-07-01

    The role of a low-temperature-grown GaAs (LT GaAs) layer on the lateral oxidation of an Al0.98Ga0.02As/GaAs layer structure has been studied by transmission electron microscopy. Results show that structures incorporating LT GaAs develop better quality oxide/GaAs interfaces compared to reference samples without LT GaAs. While the latter have As accumulation in the vicinity of these interfaces, the structures with LT layers display sharper oxide-GaAs interfaces with a reduced concentration of As. These results are explained in terms of the high Ga vacancy concentration in the LT GaAs and the possible influence of those vacancies in enhancing As diffusion away from the oxide-semiconductor interface.

  6. Molecular dynamics simulations of displacement cascades in GaAs.

    SciTech Connect

    Foiles, Stephen Martin

    2010-04-01

    The quantification of the production of primary defects via displacement cascades is an important ingredient in the prediction of the influence of radiation on the performance of electronic components in radiation environments. Molecular dynamics simulations of displacement cascades are performed for GaAs The interatomic interactions are described using a recently proposed Bond Order Potential, and a simple model of electronic stopping is incorporated. The production of point defects is quantified as a function of recoil energy and recoil species. Correlations in the point defects are examined. There are a large number of anti-site defects nearest-neighbor pairs as well as di-vacancies and larger order vacancy clusters. Radiation damage and ion implantation in materials have been studied via molecular dynamics for many years. A significant challenge in these simulations is the detailed identification and quantification of the primary defect production. For the present case of a compound semiconductor, GaAs, there are a larger number of possible point defects compared to elemental materials; two types of vacancies, two types of interstitials and antisite defects. This is further complicated by the fact that, in addition to the formation of point defects, amorphous zones may also be created. The goal of the current work is to quantify the production of primary defects in GaAs due to radiation exposures. This information will be used as part of an effort to predict the influence of radiation environments on the performance of electronic components and circuits. The data provide the initial state for continuum-level analysis of the temporal evolution of defect populations. For this initial state, it is important to know both the number of the various point defects that may be produced as well as the initial spatial correlations between the primary defects. The molecular dynamics simulations employ a recently developed Bond Order Potential (BOP) for GaAs. The analysis

  7. Optical and thermal properties of doped semiconductor

    NASA Astrophysics Data System (ADS)

    Abroug, S.; Saadallah, F.; Yacoubi, N.

    2008-01-01

    The knowledge of doping effects on optical and thermal properties of semiconductors is crucial for the development of optoelectronic compounds. The purpose of this work is to investigate theses effects by mirage effect technique and spectroscopic ellipsometry SE. The absorption spectra measured for differently doped Si and GaAs bulk samples, show that absorption in the near IR increases with dopant density and also the band gap shifts toward low energies. This behavior is due to free carrier absorption which could be obtained by subtracting phonon assisted absorption from the measured spectrum. This carrier absorption is related to the dopant density throw a semi-empirical model.

  8. Optical communication with semiconductor laser diode

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, X.

    1989-01-01

    This interim report describes the progress in the construction of a 220 Mbps Q=4 PPM optical communication system that uses a semiconductor laser as the optical transmitter and an avalanche photodiode (APD) as the photodetector. The transmitter electronics have been completed and contain both GaAs and ECL III IC's. The circuit was able to operate at a source binary data rate from 75 Mbps to 290 Mbps with pulse rise and fall times of 400 ps. The pulse shapes of the laser diode and the response from the APD/preamplifier module were also measured.

  9. Strong-Field Resonant Dynamics in Semiconductors

    NASA Astrophysics Data System (ADS)

    Wismer, Michael S.; Kruchinin, Stanislav Yu.; Ciappina, Marcelo; Stockman, Mark I.; Yakovlev, Vladislav S.

    2016-05-01

    We predict that a direct band gap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations. In this regime, Rabi oscillations are strongly coupled to intraband motion, and interband transitions mainly take place when electrons pass near the Brillouin zone center where electron populations undergo very rapid changes. The asymmetry of the residual population distribution induces an electric current controlled by the carrier-envelope phase of the driving pulse. The predicted effects are experimentally observable using photoemission and terahertz spectroscopies.

  10. Strong-Field Resonant Dynamics in Semiconductors.

    PubMed

    Wismer, Michael S; Kruchinin, Stanislav Yu; Ciappina, Marcelo; Stockman, Mark I; Yakovlev, Vladislav S

    2016-05-13

    We predict that a direct band gap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations. In this regime, Rabi oscillations are strongly coupled to intraband motion, and interband transitions mainly take place when electrons pass near the Brillouin zone center where electron populations undergo very rapid changes. The asymmetry of the residual population distribution induces an electric current controlled by the carrier-envelope phase of the driving pulse. The predicted effects are experimentally observable using photoemission and terahertz spectroscopies. PMID:27232043

  11. Photoelectron imaging of cells: photoconductivity extends the range of applicability.

    PubMed Central

    Habliston, D L; Hedberg, K K; Birrell, G B; Rempfer, G F; Griffith, O H

    1995-01-01

    Photoelectron imaging is a sensitive surface technique in which photons are used to excite electron emission. This novel method has been applied successfully in studies of relatively flat cultured cells, viruses, and protein-DNA complexes. However, rounded-up cell types such as tumor cells frequently are more difficult to image. By comparing photoelectron images of uncoated and metal-coated MCF-7 human breast carcinoma cells, it is shown that the problem is specimen charging rather than a fundamental limitation of the electron imaging process. This is confirmed by emission current measurements on uncoated monolayers of MCF-7 carcinoma cells and flatter, normal Wi-38 fibroblasts. We report here that sample charging in photoelectron microscopy can be eliminated in most specimens by simultaneous use of two light sources--the standard UV excitation source (e.g., 254 nm) and a longer wavelength light source (e.g., 325 nm). The reduction in sample charging results largely from enhanced photoconduction in the bulk sample and greatly extends the range of cells that can be examined by photoelectron imaging. The contributions of photoconductivity, the electric field of the imaging system, and the short escape depths of the photoelectrons combine to make photoelectron imaging a uniquely sensitive technique for the study of biological surfaces. Images FIGURE 1 FIGURE 2 FIGURE 3 FIGURE 4 FIGURE 5 FIGURE 6 PMID:8534832

  12. Green synthesis of water soluble semiconductor nanocrystals and their applications

    NASA Astrophysics Data System (ADS)

    Wang, Ying

    well as high-throughput and simplicity of photolithography. Photoconductive LBL thin films are fabricated from Te nanowires. The thin film has distinctively metallic mirror-like appearance and displays strong photoconductance effect characteristic of narrow band-gap semiconductors. In-situ reduction of gold results in formation of Au nanoparticles adhering to Te nanowires, which leads to the disappearance of photoconductivity of the Te thin film. Those nanomaterials are considered for various applications, such as light emitting devices, data storage materials, biosensors, photodetectors.

  13. Photoeffects of semiconductor electrolyte interfaces

    NASA Astrophysics Data System (ADS)

    Phillips, T. E.; Moorjani, K.; Murphy, J. C.; Poehler, T. O.

    1985-03-01

    Materials based on modified transition metal oxide semiconductors for the photoelectrochemical decomposition of H2O were investigated. Single crystals of TiO2 doped with VO2 were made and it was demonstrated that the bandgap was decreased from 3.03 eV to 1.99 eV. The flatband potential was increased from -1.0 V to 0.25 V. Both effects are attributed to the existence of an empty vanadium d-band located in the TiO2 bandgap. Another approach was taken with FeTiO3-Fe2O3 alloys in the form of amorphous thin films and single crystals, where it was anticipated that the charge-transfer interactions observed in such alloys could be exploited in the materials' photoelectrochemical properties. The effect of FeTiO3 had very little effect on the overall properties of FE2O3 single crystals. On the other hand the effect on the Fe/Ti oxide thin films was quite dramatic. Optical absorption, photoconductivity and photoelectrolytic spectral measurement demonstrate a photometric enhancement at energies above the bandgap for Ti concentrations in the range of 5% to 8%. There is some suggestion that the bandgap has been reduced in this concentration regime. Higher concentrations of Ti result in a change from n-type to p-type. Efficiency and stability of thermally oxidized Fe/Ti oxide films are comparable to single crystal results.

  14. Free surface properties of 3-5 compound semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Kahn, A.

    1980-06-01

    Studies of free compound semiconductor surfaces as well as gas-solid and metal-solid interaction are summarized. An experimental and theoretical analysis of the GaAs(110) surface reconstruction was conducted and applied to three additional compounds: InSb, InP and ZnTe. Attempts were made to relate the type and the magnitude of the surface reconstruction of these materials to the covalent-ionic character of the bonding. Knowledge of the atomic reconstructions of these surfaces was used to investigate the reactivity of semiconductor surfaces (GaAs(110)) with gas (oxygen) and metal (aluminum) atoms. These multicomponent systems are at the center of the author's essays to understand the chemistry of these surfaces and its relationship with their atomic reconstruction. Using Low Energy Electron Diffraction (LEED) as the principal tool to investigation, structural information has been obtained which correlates chemical and electronic information obtained by other surface analysis techniques.

  15. Multi-phonon-assisted absorption and emission in semiconductors and its potential for laser refrigeration

    SciTech Connect

    Khurgin, Jacob B.

    2014-06-02

    Laser cooling of semiconductors has been an elusive goal for many years, and while attempts to cool the narrow gap semiconductors such as GaAs are yet to succeed, recently, net cooling has been attained in a wider gap CdS. This raises the question of whether wider gap semiconductors with higher phonon energies and stronger electron-phonon coupling are better suitable for laser cooling. In this work, we develop a straightforward theory of phonon-assisted absorption and photoluminescence of semiconductors that involves more than one phonon and use to examine wide gap materials, such as GaN and CdS and compare them with GaAs. The results indicate that while strong electron-phonon coupling in both GaN and CdS definitely improves the prospects of laser cooling, large phonon energy in GaN may be a limitation, which makes CdS a better prospect for laser cooling.

  16. Isotopically engineered semiconductors

    NASA Astrophysics Data System (ADS)

    Haller, E. E.

    1995-04-01

    for homogeneous doping of floating zone Si with P, holds perhaps the biggest promises for isotopically controlled semiconductors and is discussed in some detail. Local vibrational modes of low-mass impurities are sensitive to the mass of the impurity as well as the masses of the host atoms neighboring the impurity. High-resolution infrared-absorption studies of O in Ge crystals of different isotopic composition demonstrate the extreme simplification in such spectra which is achieved by isotope control. Interdiffusion of GaAs and Ge isotope superlattices with 0.1-1 μm thick layers have been studied with secondary-ion-mass spectroscopy. This kind of internal diffusion avoids the problems with surface effects and can produce accurate data without the need for radioactive tracers. The review closes with an outlook on the exciting future possibilities offered through isotope control of a wide range of semiconductor materials.

  17. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

    PubMed

    Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

    2012-09-12

    By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells. PMID:22889019

  18. Doping-induced suppression of dislocation formation in semiconductors

    SciTech Connect

    Walukiewicz, W.

    1989-04-15

    A mechanism explaining suppression of dislocation formation in doped semiconductors is proposed. The mechanism is based on the recently introduced concept of amphoteric native defects. It is shown that supersaturation of vacancylike defects depends on the Fermi energy and thus also on the doping level. The calculated dependence of supersaturation on the doping level quantitatively accounts for experimentally observed trends in dislocation suppression in GaAs and InP.

  19. In Situ Heat-Induced Replacement of GaAs Nanowires by Au.

    PubMed

    Fauske, Vidar T; Huh, Junghwan; Divitini, Giorgio; Dheeraj, Dasa L; Munshi, A Mazid; Ducati, Caterina; Weman, Helge; Fimland, Bjørn-Ove; van Helvoort, Antonius T J

    2016-05-11

    Here we report on the heat-induced solid-state replacement of GaAs by Au in nanowires. Such replacement of semiconductor nanowires by metals is envisioned as a method to achieve well-defined junctions within nanowires. To better understand the mechanisms and dynamics that govern the replacement reaction, we performed in situ heating studies using high-resolution scanning transmission electron microscopy. The dynamic evolution of the phase boundary was investigated, as well as the crystal structure and orientation of the different phases at reaction temperatures. In general, the replacement proceeds one GaAs(111) bilayer at a time, and no fixed epitaxial relation could be found between the two phases. The relative orientation of the phases affects the replacement dynamics and can induce growth twins in the Au nanowire phase. In the case of a limited Au supply, the metal phase can also become liquid. PMID:27104293

  20. Hydrogen interaction with shallow and deep centers in GaAs

    SciTech Connect

    Bonapasta, A.A.; Pavesi, L.

    1996-03-05

    The results of detailed theoretical investigations of the properties of atomic and diatomic H in GaAs were analyzed with the effort to give a unified picture of the H behavior in this semiconductor. All calculations were performed in the psuedopotential density-functional framework using a supercell approach. The authors studied both shallow impurities (Si and C) and deep points defects (As antisite and Ga vacancy). Generally, a simple scheme may be applied in order to describe the H interaction with shallow impurities, where a key role is played by the amphoteric character of H. More complex mechanisms are involved in the deep impurity case that are related to new, interesting effects of H incorporation in GaAs. 39 refs., 14 figs., 4 tabs.

  1. Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes

    NASA Astrophysics Data System (ADS)

    Karkare, Siddharth; Dimitrov, Dimitre; Schaff, William; Cultrera, Luca; Bartnik, Adam; Liu, Xianghong; Sawyer, Eric; Esposito, Teresa; Bazarov, Ivan

    2013-03-01

    High quantum yield, low transverse energy spread, and prompt response time make GaAs activated to negative electron affinity an ideal candidate for a photocathode in high brightness photoinjectors. Even after decades of investigation, the exact mechanism of electron emission from GaAs is not well understood. Here, photoemission from such photocathodes is modeled using detailed Monte Carlo electron transport simulations. Simulations show a quantitative agreement with the experimental results for quantum efficiency, energy distributions of emitted electrons, and response time without the assumption of any ad hoc parameters. This agreement between simulation and experiment sheds light on the mechanism of electron emission and provides an opportunity to design novel semiconductor photocathodes with optimized performance.

  2. Beam driven upper-hybrid-wave instability in quantized semiconductor plasmas

    SciTech Connect

    Jamil, M.; Rasheed, A.; Rozina, Ch.; Moslem, W. M.; Salimullah, M.

    2014-02-15

    The excitation of Upper-Hybrid waves (UHWs) induced by electron beam in semiconductor plasma is examined using quantum hydrodynamic model. Various quantum effects are taken into account including recoil effect, Fermi degenerate pressure, and exchange-correlation potential. The bandwidth of the UHWs spectrum shows that the system supports purely growing unstable mode. The latter has been studied for diversified parameters of nano-sized GaAs semiconductor.

  3. Ion implantation in compound semiconductors for high-performance electronic devices

    SciTech Connect

    Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

    1996-05-01

    Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb.

  4. [Photoexcitation mechanism of photoconductive device by organic/inorganic thin-film heteropairing].

    PubMed

    Jin, Hui; Teng, Feng; Liu, Jun-Feng; Meng, Xian-Guo; Xu, Zheng; Hou, Yan-Bing; Xu, Xu-Rong

    2004-08-01

    Photoconductive devices with organic (polyvinylcarbazole-PVK)/inorganic (zinc-sulfide--ZnS) thin-film heteropairing were fabricated. In external field, the excitation profile of the steady-state photoconductivity and the primary photoexcitation process of hybrid devices were presented and discussed. Comparison of photoconductivity of the devices and absorption spectra of PVK and ZnS implied that both layers absorption contributes to the photocurrent, but the effective part is at the interface of PVK and ZnS. The dependence of maximum photocurrent on the applied voltage and the dark and illuminated current spectra indicates the ultrafast charge transfer at the interface. PMID:15766107

  5. Picosecond Transient Photoconductivity in Functionalized Pentacene Molecular Crystals Probed by Terahertz Pulse Spectroscopy

    NASA Astrophysics Data System (ADS)

    Hegmann, F. A.; Tykwinski, R. R.; Lui, K. P.; Bullock, J. E.; Anthony, J. E.

    2002-11-01

    We have measured transient photoconductivity in functionalized pentacene molecular crystals using ultrafast optical pump-terahertz probe techniques. The single crystal samples were excited using 800nm, 100fs pulses, and the change in transmission of time-delayed, subpicosecond terahertz pulses was used to probe the photoconducting state over a temperature range from 10 to 300K. A subpicosecond rise in photoconductivity is observed, suggesting that mobile carriers are a primary photoexcitation. At times longer than 4ps, a power-law decay is observed consistent with dispersive transport.

  6. Persistent photoconductivity in high resistive Zn{sub 3}P{sub 2}

    SciTech Connect

    Sierański, K.; Szatkowski, J. Pawlikowski, J. M.

    2014-02-28

    Resistivity and photoconductivity of p-type Zn{sub 3}P{sub 2} polycrystals grown by closed tube vapour transport method have been investigated. Persistent photoconductivity (PPC) has been observed at temperatures T < 200 K. At 77 K, the photoconduction persists for over 10{sup 3} s after termination of the light. The PPC buildup and decay kinetics have been measured at 77 K and analyzed in the frame of large lattice-relaxed deep levels. We have determined the spectral dependence for the optical cross section and obtain an optical ionization energy of 0.83 eV.

  7. Direct Patterning of Organic Self-Assembled Monolayer (SAM) on GaAs Surfaces via Dip-Pen Nanolithography (DPN)

    NASA Astrophysics Data System (ADS)

    Xiong, Peng; Keiper, Timothy; Wang, Xiaolei; Zhao, Jianhua

    2015-03-01

    Hybrid structures of functional molecules and solid-state (SS) materials have attracted extensive interest in surface nanoscience and molecular electronics. The formation and micro/nano patterning of organic SAMs on SS surfaces are a key step in fabricating such devices. Here we report realization of high quality MHA SAMs on GaAs and direct formation of micro/nanoscale patterns of MHA SAM on the surface by micro-contact printing (μ CP) and DPN. The process begins with the preparation of an oxide-free surface of GaAs, for which we employed treatment by an ammonium polysulfide ((NH4)2 Sx) solution. The treatment strips native oxides from GaAs creating an atomic layer of sulfur covalently bonded to the fresh surface. Formation of high-quality SAMs of thiol molecules on GaAs then proceeds through exchange of the sulfur and the thiol terminal of the molecules. The effects of the sulfur-passivation and formation of MHA SAM on the treated surface were confirmed by XPS, HRTEM, and DPN. To the best of our knowledge, this is a first realization of direct DPN of nanoscale organic SAM on a semiconductor free of surface oxide. We further evidence the utility of the hybrid platform by demonstrating directed self-assembly of Au nanoparticles onto MHA/ODT SAM templates on GaAs.

  8. Pulse transformer for GaAs laser

    NASA Technical Reports Server (NTRS)

    Rutz, E. M.

    1976-01-01

    High-radiance gallium arsenide (GaAs) laser operating at room temperature is utilized in optical navigation system. For efficient transformer-to-laser impedance match, laser should be connected directly to pulse transformer secondary winding.

  9. Influence of electrically induced refraction and absorption on the measurement of spin current by pockels effect in GaAs

    SciTech Connect

    Liu, Houquan; She, Weilong

    2015-03-14

    The pockels effect could be utilized to measure spin current in semiconductors for linear electro-optic coefficient can be induced by spin current. When dc electric field is applied, the carriers will shift in k space, which could lead to the change of refraction and absorption coefficients. In this paper, we investigate the influence of the induced change of the refraction and absorption coefficients on the measurement of spin current by pockels effect in GaAs.

  10. Optical pumping in semiconductors

    NASA Astrophysics Data System (ADS)

    Hermann, C.; Lampel, G.; Safarov, V. I.

    Optical Pumping in Semiconductors (OPS) arises from the transfer of angular momentum from light to the localized states of a semiconductor. Spin polarized electrons are thus excited in the conduction band; their polarization is convenient measured through the circular polarization of photoluminescence. This review gives an insight of the various studies based on OPS. After describing the first OPS experiment, we show that this technique allows the determination of band structure properties, and the optical detection of conduction electron spin resonance. The nuclei are polarized by hyperfine interaction, which permits the optical detection of nuclear resonance. A magnetic field transverse to the direction of light propagation produces an electronic depolarization analogous to the Hanle effect. The electron lifetime and spin relaxation time are measured under steady-state conditions by comparison to their Larmor frequency in this transverse field. By activation to Negative Electron Affinity of a GaAs surface, electrons oriented by OPS can be photoemitted into vacuum, leading to a highly spin-polarized beam : we describe a collision experiment in which such a beam transfers angular momentum to atoms. Le Pompage Optique dans les semiconducteurs (POS) provient du transfert de moment angulaire de la lumière vers les états délocalisés d'un semiconducteur. On excite ainsi dans la bande de conduction des électrons polarisés de spin, dont on mesure commodément la polarisation à partir de la polarisation circulaire de la photoluminescence. Cet article de revue présente un aperçu des différentes études fondées sur le POS. Après avoir décrit la première expérience de POS, nous montrons que par cette technique on peut déterminer des propriétés liées à la structure de bande, et détecter optiquement la résonance de spin des électrons de conduction. Les noyaux sont polarisés grâce au couplage hyperfin qui permet également la détection optique de la r

  11. Heterogeneous Integration of Compound Semiconductors

    NASA Astrophysics Data System (ADS)

    Moutanabbir, Oussama; Gösele, Ulrich

    2010-08-01

    The ability to tailor compound semiconductors and to integrate them onto foreign substrates can lead to superior or novel functionalities with a potential impact on various areas in electronics, optoelectronics, spintronics, biosensing, and photovoltaics. This review provides a brief description of different approaches to achieve this heterogeneous integration, with an emphasis on the ion-cut process, also known commercially as the Smart-Cut™ process. This process combines semiconductor wafer bonding and undercutting using defect engineering by light ion implantation. Bulk-quality heterostructures frequently unattainable by direct epitaxial growth can be produced, provided that a list of technical criteria is fulfilled, thus offering an additional degree of freedom in the design and fabrication of heterogeneous and flexible devices. Ion cutting is a generic process that can be employed to split and transfer fine monocrystalline layers from various crystals. Materials and engineering issues as well as our current understanding of the underlying physics involved in its application to cleaving thin layers from freestanding GaN, InP, and GaAs wafers are presented.

  12. Semiconductor Laser Phased Array

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1985-01-01

    Oscillations synchronized and modulated individually for beam steering. Phased array of GaAs infrared lasers put out powerful electronically-steerable coherent beam. Fabricated as integrated circuit on GaAs chip, new device particularly suited to optical communications, optical data processing and optical detection and ranging systems.

  13. Stress induced long wavelength photoconductivity in doped silicon infrared detectors

    NASA Technical Reports Server (NTRS)

    Houck, J. R.

    1982-01-01

    The long wavelength cutoff of a Si:P detector was extended to 34 microns by the application of a uniaxial stress. An unstressed Si:P photoconductive detector responds to photons of up to 28 microns wavelength. By applying a uniaxial stress to a detector along the /100/ crystal axis, the response was extended to approximately 34 microns. The /100/ axis was chosen as the stress direction because theoretical calculations predicted that such a stress extends the wavelength response more than one along the /110/ axis. These theoretical calculations were based upon fits to experimental data obtained at stresses of up to approximately kbar, and indicated that the extension in wavelength response continues to increase at much larger stresses.

  14. Microstructured gradient-index lenses for THz photoconductive antennas

    NASA Astrophysics Data System (ADS)

    Brincker, Mads; Karlsen, Peter; Skovsen, Esben; Søndergaard, Thomas

    2016-02-01

    A new type of substrate lens for photoconductive antennas (PCA's) based on sub-wavelength microstructuring is presented and studied theoretically by the use of Greens function integral equation methods (GFIEM's). By etching sub-wavelength trenches into a flat substrate, the effective dielectric constant can be designed to function like a gradient index (GRIN) lens. The proposed GRIN substrate lenses have sub-mm dimension, which is smaller than the dimensions of a typical hyper-hemispherical substrate lens (HSL), and could enable fabrication of arrays of closely packed PCA's with individual lenses integrated directly into the PCA substrate. The performance of different GRIN lenses is compared to a HSL and shown to be comparable with regards to the terahertz radiation extraction efficiency, and it is shown that the collimating properties of these GRIN lenses can be tailored by changing the parameters used for microstructuring.

  15. X-ray induced photoconductivity in Vanadium Dioxide samples

    NASA Astrophysics Data System (ADS)

    Dietze, Sebastian; Mohanty, Jyoti; Marsh, Moses; Kim, Jong Woo; West, Kevin; Schuller, Ivan K.; Shpyrko, Oleg G.

    2011-03-01

    Vanadium Dioxide (VO2) goes through a first-order phase transition at approximately 340K, exhibiting both an insulator to metal transition (IMT) and a structural phase transition (SPT), with a monoclinic (M1) insulating phase at low temperatures and a rutile (R) metallic phase at high temperatures. We show an anomalous behavior of x-ray induced persistent photoconductivity (PPC) well below the temperature induced phase transition in VO2 devices. We present conductivity and X-ray Diffraction (XRD) measurements, revealing a large enhancement of conductivity due to photo-induced carriers. Moreover, with the addition of nominal electric fields, we are able to fully transition into the rutile metallic phase at room temperature. This effect is completely reversible, allowing the monoclinic insulating phase to be recovered via annealing.

  16. Photoconductive and nonlinear optical properties of composites based on metallophthalocyanines

    NASA Astrophysics Data System (ADS)

    Vannikov, A. V.; Grishina, A. D.; Gorbunova, Yu. G.; Tsivadze, A. Yu.

    2015-08-01

    The photoconductive, photorefractive and nonlinear optical properties of composites from polyvinylcarbazole or aromatic polyimide containing supramolecular ensembles of (tetra-15-crown-5) - phthalocyaninato gallium, indium, - phthalocyaninateacetato yttrium, - phthalocyaninato ruthenium with axially coordinated pyrazine molecules were investigated at 633, 1030 and 1064nmusing continuous and pulsed lasers. Supramolecular ensembles (SE) were prepared through dissolution of molecular metallophthalocyanines in tetrachloroethane (TCE) and subsequent treatment via three cycles of heating to 90∘C and slow cooling to room temperature. The zscan method in femtosecond and nanosecond regimeswas used for measuring nonlinear optical properties phthalocyaninato indium and yttrium in TCE solutions and polymer films. It was established that effect of heavy metallic atom is basic factor which determines the quantum yield, photorefractive amplification of laser object beam, dielectric susceptibility of third order and nonlinear optical properties of metallophthalocyanines.

  17. Fielding and calibration issues for diamond photoconducting detectors

    SciTech Connect

    Spielman, R.B.; Ruggles, L.E.; Pepping, R.E.; Breeze, S.F.; McGurn, J.S.; Struve, K.W.

    1996-12-01

    Diamond photoconducting detectors are routinely fielded as soft x-ray diagnostics on Sandia`s Saturn facility. We have developed an improved detector mount that provides a 200-ps time response, is easily cleanable, and is very rugged. In addition, we have developed a new, fast insertion unit to apply bias voltage to the detectors. Absolute calibration of the PCDs is carried out either at the Brookhaven National Synchrotron Light Source or on Sandia`s laser calibration facility. We are now fielding diamond elements that have the dimensions 1x3x0.5 nun and 1x1xO.5 mm. We are neutron damaging some of the 1x1xO.5-mm detectors to reduce their sensitivity. We can tailor PCD sensitivity by adjusting element size and neutron damage level.

  18. Photoconductive Detection of Tetrahedrally Coordinated Hydrogen in ZnO

    NASA Astrophysics Data System (ADS)

    Koch, S. G.; Lavrov, E. V.; Weber, J.

    2012-04-01

    In this Letter we apply an innovative experimental approach, which allows us to improve the sensitivity of detecting local vibrational modes (LVMs) even in highly absorbing spectral regions. This photoconductive technique allowed us to confirm a recent suggestion of a new multicenter bond for hydrogen in ZnO [A. Janotti and C. G. Van de Walle, Nature Mater.NMAACR1476-1122 6, 44 (2007)10.1038/nmat1795]. The two LVMs of the hydrogen substituting oxygen in ZnO are identified at 742 and 792cm-1. The modes belong to a nondegenerated A1 and a twofold degenerated E representations of the C3v point group. The tetrahedral coordination of the hydrogen atom is the result of a newly detected multicenter bond for defects in solids.

  19. Photoconductive probing of the trap distribution in switchable interfaces.

    PubMed

    Tian, Ye; Zhang, Jianming; Guo, Chuan Fei; Zhang, Baoshun; Liu, Qian

    2016-01-14

    Interfacial resistive switching features are highly dependent on the distribution of the carrier traps in the interface. However, the lack of probing seriously restricts ways of offering physical insights into its mechanism and improving interfacial resistors. In this work, we investigated a resistive switching interface that consists of Bi2S3 nano networks (BSNN) and F-doped SnO2 (FTO), uncovering the relationship between the decay of the photoconductance in BSNN and interfacial trap distribution. Based on this, we suggest a general method to probe the distribution of various interface traps. This method provides us with a new tool to study the interfacial trap distribution in an interfacial resistor, and it might also be used to understand other interface problems. PMID:26660900

  20. GaAs Semi-Insulating Layer for a GaAs Device

    NASA Technical Reports Server (NTRS)

    Sherrill, G.; Mattauch, R. J.

    1986-01-01

    Improved design for GaAs electronic device or integrated circuit designed to operate at cryogenic temperatures, customary SiO2 insulating layer replaced by semi-insulating layer of GaAs. Thermal expansions of device and covering layer therefore match closely, and thermal stresses caused by immersion in cryogenic chamber nearly eliminated.

  1. Photoconductive and photovoltaic response of high-dark-resistivity 6H-SiC devices

    NASA Technical Reports Server (NTRS)

    Cho, Pak S.; Goldhar, Julius; Lee, Chi H.; Saddow, Stephen E.; Neudeck, Philip

    1995-01-01

    The optoelectronic properties of high-resistivity p-type hexagonal silicon carbide (6H-SiC) have been investigated using lateral photoconductive switches. Both photovoltaic and photoconductive effects are reported, measured at 337 nm, which is above the 6H-SiC absorption edge. These photoconductive switches have been fabricated with dark resistances of up to 1 M omega; photoconductive switching efficiencies of more than 80% have been achieved. In addition, these devices displayed a high-speed photovoltaic response to nanosecond laser excitations in the ultraviolet spectral region; in particular, the observed photovoltaic response pulse width can be shorter than the exciting laser pulse width. This subnanosecond photovoltaic response has been modeled and good qualitative agreement with experiment has been obtained.

  2. Control of persistent photoconductivity in nanostructured InP through morphology design

    NASA Astrophysics Data System (ADS)

    Monaico, Ed; Postolache, V.; Borodin, E.; Ursaki, V. V.; Lupan, O.; Adelung, R.; Nielsch, K.; Tiginyanu, I. M.

    2015-03-01

    In this paper, we show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures fabricated by anodic etching of bulk substrates can be controlled through the modification of the sample morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages. The relaxation of photoconductivity in bulk InP substrates, porous layers, and utrathin membranes is investigated as a function of temperature and excitation power density. The obtained results suggest that PPC in porous InP layers is due to porosity induced potential barriers which hinder the recombination of photoexcited carriers, while the photoconductivity relaxation processes in ultrathin membranes are governed by surface states.

  3. A new methodology for determining recombination parameters using an RF photoconductance instrument

    SciTech Connect

    Sinton, R.A.; Cuevas, A.

    1995-08-01

    Measurements of minority-carrier lifetime in silicon wafers provide an effective technique for process control and device-physics optimization. For example, detailed measurements of minority-carrier lifetime vs. injection level can allow a nearly complete experimental optimization of a solar cell design and process. This extended abstract describes a methodology that allows this fully characterization by using a relatively simple RF photoconductance-decay tool. By analyzing the quasi-steady-state photoconductance as a function of incident light intensity, information corresponding to an I{sub sc}-V{sub oc} curve can be obtained from a non-contacted silicon wafer. This information is available at various stages during the solar cell fabrication process. The use of steady-state photoconductance instead of transient photoconductance makes use of simple electronics and light sources, yet it has the capability to measure lifetimes down into the 100 ns range.

  4. Photoconductivity in reactively evaporated copper indium selenide thin films

    SciTech Connect

    Urmila, K. S. Asokan, T. Namitha Pradeep, B.; Jacob, Rajani; Philip, Rachel Reena

    2014-01-28

    Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10{sup −5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 10{sup 6} cm{sup −1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

  5. Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions

    DOE PAGESBeta

    Puretzky, Alexander A.; Basile, Leonardo; Idrobo, Juan Carlos; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai; Li, Xufan; Lin, Ming -Wei; Wang, Kei

    2016-02-16

    Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional (2D) layered semiconductors, especially the transition metal dichalcogenides (TMDs), are fascinating new artificial solids just nanometers-thin that promise novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. Here, monolayers of n-type MoSe2 and p-type Mo1-xW xSe2–MoSe2 are grown by vapor transport methods, then transferred and stamped to form artificial vdW heterostructures with different interlayer orientations. Atomic-resolution Z-contrast electron microscopy and electron diffraction are used to characterize both the individual monolayers and the atomic registry betweenmore » layers in the bilayer vdW heterostructures. These measurements are compared with photoluminescence and low-frequency Raman spectroscopy, which indicates strong interlayer coupling in heterostructures. Remarkably, the heterojunctions exhibit an unprecedented photoconductivity effect that persists at room temperature for several days. This persistent photoconductivity is shown to be tunable by applying a gate bias that equilibrates the charge distribution. Furthermore, these measurements indicate that such ultrathin vdW heterojunctions can function as rewritable optoelectronic switches or memory elements under time-dependent photo-illumination, an effect which appears promising for new monolayer TMDs-based optoelectronic devices applications.« less

  6. Comparative study on THz time-domain spectroscopy using 780-nm 1.3-ps laser pulses with different detections of LT-GaAs photoconductive antenna and ZnTe electro-optic sampling

    NASA Astrophysics Data System (ADS)

    Tadokoro, Yuzuru; Takida, Yuma; Kumagai, Hiroshi; Nashima, Shigeki; Kobayashi, Ataru

    2013-03-01

    We have demonstrated the comparison of terahertz (THz) time-domain spectroscopy (THz-TDS): a low-temperature grown GaAs photoconductive antenna (PCA) and ZnTe electro-optic (EO) sampling with 780-nm 1.3-ps laser pulses. As a result, the different detection limits up to approximately 0.8, 1.0, and 1.3 THz are obtained with a bow-tie, dipole antenna, and ZnTe crystal, respectively. In the PCA sampling, the frequency at main peak of the spectrum measured with the dipole antenna is higher than the one with the bow-tie antenna. The dynamic range of the power spectrum measured with the bow-tie antenna is higher than any other detection methods. In addition, we compare the PCA sampling with femtosecond laser pulses to the one with picosecond laser pulses in terms of the response of the PCAs.

  7. Photoconductivity of Er-doped InAs quantum dots embedded in strain-relaxed InGaAs layers with 1.5 µm cw and pulse excitation

    NASA Astrophysics Data System (ADS)

    Murakumo, Keisuke; Yamaoka, Yuya; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro

    2016-04-01

    We fabricated a photoconductive antenna structure utilizing Er-doped InAs quantum dot layers embedded in strain-relaxed In0.35Ga0.65As layers on a GaAs substrate. Mesa-shaped electrodes for the antenna structure were formed by photolithography and wet etching in order to suppress its dark current. We measured the photocurrent with the excitation of ∼1.5 µm cw and femtosecond pulse lasers. Compared with the dark current, the photocurrent was clearly observed under both cw and pulse excitation conditions and almost linearly increased with increasing excitation power in a wide range of magnitudes from 10 W/cm2 to 10 MW/cm2 order.

  8. Spin splitting in 2D monochalcogenide semiconductors

    PubMed Central

    Do, Dat T.; Mahanti, Subhendra D.; Lai, Chih Wei

    2015-01-01

    We report ab initio calculations of the spin splitting of the uppermost valence band (UVB) and the lowermost conduction band (LCB) in bulk and atomically thin GaS, GaSe, GaTe, and InSe. These layered monochalcogenides appear in four major polytypes depending on the stacking order, except for the monoclinic GaTe. Bulk and few-layer ε-and γ -type, and odd-number β-type GaS, GaSe, and InSe crystals are noncentrosymmetric. The spin splittings of the UVB and the LCB near the Γ-point in the Brillouin zone are finite, but still smaller than those in a zinc-blende semiconductor such as GaAs. On the other hand, the spin splitting is zero in centrosymmetric bulk and even-number few-layer β-type GaS, GaSe, and InSe, owing to the constraint of spatial inversion symmetry. By contrast, GaTe exhibits zero spin splitting because it is centrosymmetric down to a single layer. In these monochalcogenide semiconductors, the separation of the non-degenerate conduction and valence bands from adjacent bands results in the suppression of Elliot-Yafet spin relaxation mechanism. Therefore, the electron- and hole-spin relaxation times in these systems with zero or minimal spin splittings are expected to exceed those in GaAs when the D’yakonov-Perel’ spin relaxation mechanism is also suppressed. PMID:26596907

  9. Spin splitting in 2D monochalcogenide semiconductors

    NASA Astrophysics Data System (ADS)

    Do, Dat T.; Mahanti, Subhendra D.; Lai, Chih Wei

    2015-11-01

    We report ab initio calculations of the spin splitting of the uppermost valence band (UVB) and the lowermost conduction band (LCB) in bulk and atomically thin GaS, GaSe, GaTe, and InSe. These layered monochalcogenides appear in four major polytypes depending on the stacking order, except for the monoclinic GaTe. Bulk and few-layer ε-and γ -type, and odd-number β-type GaS, GaSe, and InSe crystals are noncentrosymmetric. The spin splittings of the UVB and the LCB near the Γ-point in the Brillouin zone are finite, but still smaller than those in a zinc-blende semiconductor such as GaAs. On the other hand, the spin splitting is zero in centrosymmetric bulk and even-number few-layer β-type GaS, GaSe, and InSe, owing to the constraint of spatial inversion symmetry. By contrast, GaTe exhibits zero spin splitting because it is centrosymmetric down to a single layer. In these monochalcogenide semiconductors, the separation of the non-degenerate conduction and valence bands from adjacent bands results in the suppression of Elliot-Yafet spin relaxation mechanism. Therefore, the electron- and hole-spin relaxation times in these systems with zero or minimal spin splittings are expected to exceed those in GaAs when the D’yakonov-Perel’ spin relaxation mechanism is also suppressed.

  10. Semiconductor Cubing

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Through Goddard Space Flight Center and Jet Propulsion Laboratory Small Business Innovation Research contracts, Irvine Sensors developed a three-dimensional memory system for a spaceborne data recorder and other applications for NASA. From these contracts, the company created the Memory Short Stack product, a patented technology for stacking integrated circuits that offers higher processing speeds and levels of integration, and lower power requirements. The product is a three-dimensional semiconductor package in which dozens of integrated circuits are stacked upon each other to form a cube. The technology is being used in various computer and telecommunications applications.

  11. Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials

    DOEpatents

    Johnston, Steven W.; Ahrenkiel, Richard K.

    2002-01-01

    An apparatus for measuring the minority carrier lifetime of a semiconductor sample using radio-frequency coupling. The measuring apparatus includes an antenna that is positioned a coupling distance from a semiconductor sample which is exposed to light pulses from a laser during sampling operations. A signal generator is included to generate high frequency, such as 900 MHz or higher, sinusoidal waveform signals that are split into a reference signal and a sample signal. The sample signal is transmitted into a sample branch circuit where it passes through a tuning capacitor and a coaxial cable prior to reaching the antenna. The antenna is radio-frequency coupled with the adjacent sample and transmits the sample signal, or electromagnetic radiation corresponding to the sample signal, to the sample and receives reflected power or a sample-coupled-photoconductivity signal back. To lower impedance and speed system response, the impedance is controlled by limiting impedance in the coaxial cable and the antenna reactance. In one embodiment, the antenna is a waveguide/aperture hybrid antenna having a central transmission line and an adjacent ground flange. The sample-coupled-photoconductivity signal is then transmitted to a mixer which also receives the reference signal. To enhance the sensitivity of the measuring apparatus, the mixer is operated to phase match the reference signal and the sample-coupled-photoconductivity signal.

  12. Hot Electron Effects in Semiconductors.

    NASA Astrophysics Data System (ADS)

    Moore, James Scott

    The high-field transport of electrons has been calculated for two semiconductor configurations: quasi -two-dimensional and bulk. All calculations are performed by solving the Boltzmann equation, assuming a displaced Maxwellian distribution function. In the case of quasi-two-dimensional semiconductors, this treatment is applied to a <100> inversion layer in silicon. Under a high electric field, energy levels become grouped into subbands, so that motion of carriers perpendicular to the surface becomes quantized; thus, the energy, momentum and population transfer relaxation rates appropriate to the individual levels must be considered in the calculations, along with their relation to velocity overshoot. Previous work was performed under the assumption that intervalley scattering is a local phenomenon, i.e., a function only of electron temperature of the initial valley. In the present work, this assumption has been relaxed, and the intervalley coupling of electron temperature is taken into account. dc and transient response characteristics for both uncoupled and coupled models are performed, and the results are compared. Due to the recent interest in GaAs/Al(,x)Ga(,1 -x)As superlattices, there exists a need for a theory of hot electron transport in these structures. Since GaAs is a polar semiconductor, a theory must first be derived for polar III-V compounds under inversion, the result then being easily extended to superlattices. In this work, such theory is derived but, due to the alignment of the subbands, the simultaneous balance equations cannot be solved numerically with the approach undertaken here (solution of the Boltzmann equation). A theory of transport in bulk III-V compounds is modified by some simplifying approximations to make the theory numerically tractable, this theory then being applied to model bulk III-V compounds (in particular dc and transient response characteristics), along with their ternary and quaternary alloys. These results are found to

  13. Thermal oxidation of 3-5 compound semiconductors

    NASA Astrophysics Data System (ADS)

    Monteironeto, Othon Derego

    1988-11-01

    Thermal oxidation of 3-5 compound semiconductors has been studied in the temperature range of 300 to 600 C. Two members of this class of materials, namely InP and GaAs, were the object of the experimental work carried out here. The main analytical tools used were transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS). TEM was employed to access microstructural changes and SIMS to access the composition redistribution that takes place as a consequence of the oxidation reaction. Below 400 C oxidation of both materials led to the formation of amorphous scales, which consisted of a mixture of gallium and arsenic oxides in the case of GaAs, and indium phosphate and oxide in the case of InP. The oxidation kinetics of InP was found to be slower than that of GaAs. In the high temperature regime, i.e., above 400 C, the oxidation of both materials resulted in crystalline products. Precipitation of the group 5 element at the scale/semiconductor interface took place during oxidation. At the GaAs/Ga2O3interface, As precipitates were formed with a truncated square pyramid shape bound by (111) sub GaAs planes. The precipitates found at the InPO4/InP interface were either a phosphorus rich phase or red phosphorus. Strong vaporization under the electron beam prohibited a more accurate determination. The morphology of those precipitates were very similar to the As ones in GaAs.

  14. Ablation of GaAs by Intense, Ultrafast Electronic Excitation from Highly Charged Ions

    SciTech Connect

    Schenkel, T.; Hamza, A.V.; Barnes, A.V.; Schneider, D.H.; Banks, J.C.; Doyle, B.L.

    1998-09-01

    We have measured total ablation rates and secondary ion yields from undoped GaAs(100) interacting with slow (v=6.6{times}10{sup 5} m /s) , very highly charged ions. Ablation rates increase strongly as a function of projectile charge. Some 1400thinspthinsptarget atoms are removed when a single Th{sup 70+} ion deposits a potential energy of 152.6thinspthinspkeV within a few femtoseconds into a nanometer-sized target volume. We discuss models for ablation of semiconductors by intense, ultrafast electronic excitation. {copyright} {ital 1998} {ital The American Physical Society}

  15. Optically Detected Electron-Nuclear Double Resonance of As-Antisite Defects in GaAs

    NASA Astrophysics Data System (ADS)

    Hofmann, D. M.; Meyer, B. K.; Lohse, F.; Spaeth, J.-M.

    1984-09-01

    This Letter reports on the first optically detected electron-nuclear double-resonance (ENDOR) measurements of a paramagnetic semiconductor defect in which ligand hyperfine interactions could be resolved. In semi-insulating GaAs: Cr the ENDOR lines of the first-shell 75As neighbors of the regular tetrahedral AsAs4-antisite defect could be detected and analyzed. The ENDOR investigation reveals that at least one other AsAs4-antisite complex contributes to the same ESR spectrum.

  16. Twin superlattice-induced large surface recombination velocity in GaAs nanostructures

    SciTech Connect

    Sheng, Chunyang; Brown, Evan; Nakano, Aiichiro; Shimojo, Fuyuki

    2014-12-08

    Semiconductor nanowires (NWs) often contain a high density of twin defects that form a twin superlattice, but its effects on electronic properties are largely unknown. Here, nonadiabatic quantum molecular dynamics simulation shows unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective charge-recombination centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying surface-recombination processes.

  17. Spatially Resolved Thermodynamics of the Partially Ionized Exciton Gas in GaAs.

    PubMed

    Bieker, S; Henn, T; Kiessling, T; Ossau, W; Molenkamp, L W

    2015-06-01

    We report on the observation of macroscopic free exciton photoluminescence (PL) rings that appear in spatially resolved PL images obtained on a high purity GaAs sample. We demonstrate that a spatial temperature gradient in the photocarrier system, which is due to nonresonant optical excitation, locally modifies the population balance between free excitons and the uncorrelated electron-hole plasma described by the Saha equation and accounts for the experimentally observed nontrivial PL profiles. The exciton ring formation is a particularly instructive manifestation of the spatially dependent thermodynamics of a partially ionized exciton gas in a bulk semiconductor. PMID:26196644

  18. Spatially Resolved Thermodynamics of the Partially Ionized Exciton Gas in GaAs

    NASA Astrophysics Data System (ADS)

    Bieker, S.; Henn, T.; Kiessling, T.; Ossau, W.; Molenkamp, L. W.

    2015-06-01

    We report on the observation of macroscopic free exciton photoluminescence (PL) rings that appear in spatially resolved PL images obtained on a high purity GaAs sample. We demonstrate that a spatial temperature gradient in the photocarrier system, which is due to nonresonant optical excitation, locally modifies the population balance between free excitons and the uncorrelated electron-hole plasma described by the Saha equation and accounts for the experimentally observed nontrivial PL profiles. The exciton ring formation is a particularly instructive manifestation of the spatially dependent thermodynamics of a partially ionized exciton gas in a bulk semiconductor.

  19. Direct measurement of coherent subterahertz acoustic phonons mean free path in GaAs

    NASA Astrophysics Data System (ADS)

    Legrand, R.; Huynh, A.; Jusserand, B.; Perrin, B.; Lemaître, A.

    2016-05-01

    The phonon mean free path is generally inferred from the measurement of thermal conductivity and we are still lacking precise information on this quantity. Recent advances in the field of high-frequency phonons transduction using semiconductor superlattices give the opportunity to fill this gap. We present experimental results on the attenuation of longitudinal acoustic phonons in GaAs in the frequency and temperature ranges 0.2-1 THz and 10-80 K respectively. Surprisingly, we observe a plateau in the frequency dependence of the attenuation above 0.7 THz, that we ascribe to a breakdown of Herring processes.

  20. Tunable Hybrid Qubit in a GaAs Double Quantum Dot

    NASA Astrophysics Data System (ADS)

    Cao, Gang; Li, Hai-Ou; Yu, Guo-Dong; Wang, Bao-Chuan; Chen, Bao-Bao; Song, Xiang-Xiang; Xiao, Ming; Guo, Guang-Can; Jiang, Hong-Wen; Hu, Xuedong; Guo, Guo-Ping

    2016-02-01

    We experimentally demonstrate a tunable hybrid qubit in a five-electron GaAs double quantum dot. The qubit is encoded in the (1,4) charge regime of the double dot and can be manipulated completely electrically. More importantly, dot anharmonicity leads to quasiparallel energy levels and a new anticrossing, which help preserve quantum coherence of the qubit and yield a useful working point. We have performed Larmor precession and Ramsey fringe experiments near the new working point and find that the qubit decoherence time is significantly improved over a charge qubit. This work shows a new way to encode a semiconductor qubit that is controllable and coherent.

  1. Pulsed Molecular Beams For Growth Of InAs On GaAs

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J.

    1989-01-01

    Pauses for annealing reduce number of defects. Deposition process that includes pulsed molecular beams produces high-quality epitaxial layers of indium arsenide on gallium arsenide substrates. Layers made as much as 30 atoms thick without introducing excessive numbers of dislocations, despite 7.4-percent mismatch between InAs and GaAs crystal lattices. Layers offer superior electrical properties in such devices as optically addressed light modulators, infrared sensors, semiconductor lasers, and high-electron-mobility transistors. Technique applicable to other epitaxial systems in which lattices highly mismatched.

  2. Photoluminescence Investigations of InGaAsN Alloys Lattice-Matched to GaAs

    SciTech Connect

    Jones, E.D.; Modine, N.R.; Allerman, A.A.; Fritz, I.J.; Kurtz, S.R.; Wright, A.F.; Tozer, S.T.; Wei, Xing

    1999-06-01

    InGaAsN is a semiconductor alloy system with the property that the inclusion of only 2% nitrogen reduces the bandgap by more than 30%. In this paper, we have measured the conduction-band mass measurements by three different techniques for 2% nitrogen in InGaAsN lattice matched to GaAs. Additionally, we also report pressure dependent measurements of the conduction-band mass between ambient and 40 kbar. Based on our results, we suggest that the observed changes in masses are a result of {Lambda}-X mixing.

  3. Determination of carrier concentration and compensation microprofiles in GaAs

    NASA Technical Reports Server (NTRS)

    Jastrzebski, L.; Lagowski, J.; Walukiewicz, W.; Gatos, H. C.

    1980-01-01

    Simultaneous microprofiling of semiconductor free carrier, donor, and acceptor concentrations was achieved for the first time from the absolute value of the free carrier absorption coefficient and its wavelength dependence determined by IR absorption in a scanning mode. Employing Ge- and Si-doped melt-grown GaAs, striking differences were found between the variations of electron concentration and those of ionized impurity concentrations. These results showed clearly that the electronic characteristics of this material are controlled by amphoteric doping and deviations from stoichiometry rather than by impurity segregation.

  4. Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

    DOE PAGESBeta

    Armstrong, Andrew M.; Crawford, Mary H.; Jayawardena, Asanka; Ahyi, Ayayi; Dhar, Sarit

    2016-03-10

    Solar-blind photodetection and photoconductive gain > 50 corresponding to a responsivity > 8 A/W was observed for β-Ga2O3 Schottky photodiodes. We investigated the origin of photoconductive gain. Current-voltage characteristics of the diodes did not indicate avalanche breakdown, which excludes carrier multiplication by impact ionization as the source for gain. However, photocapacitance measurements indicated a mechanism for hole localization for above-band gap illumination, suggesting self-trapped hole formation. Comparison of photoconductivity and photocapacitance spectra indicated that self-trapped hole formation coincides with the strong photoconductive gain. We conclude that self-trapped hole formation near the Schottky diode lowers the effective Schottky barrier in reversemore » bias, producing photoconductive gain. Ascribing photoconductive gain to an inherent property like self-trapping of holes can explain the operation of a variety of β-Ga2O3 photodetectors.« less

  5. Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

    NASA Astrophysics Data System (ADS)

    Armstrong, Andrew M.; Crawford, Mary H.; Jayawardena, Asanka; Ahyi, Ayayi; Dhar, Sarit

    2016-03-01

    Solar-blind photodetection and photoconductive gain >50 corresponding to a responsivity >8 A/W were observed for β-Ga2O3 Schottky photodiodes. The origin of photoconductive gain was investigated. Current-voltage characteristics of the diodes did not indicate avalanche breakdown, which excludes carrier multiplication by impact ionization as the source for gain. However, photocapacitance measurements indicated a mechanism for hole localization for above-band gap illumination, suggesting self-trapped hole formation. Comparison of photoconductivity and photocapacitance spectra indicated that self-trapped hole formation coincides with the strong photoconductive gain. It is concluded that self-trapped hole formation near the Schottky diode lowers the effective Schottky barrier in reverse bias, producing photoconductive gain. Ascribing photoconductive gain to an inherent property like self-trapping of holes can explain the operation of a variety of β-Ga2O3 photodetectors.

  6. Plasma deposition of wide gap, highly photoconductive a-Si:H thin films from disilane-helium mixtures

    SciTech Connect

    Rajeswaran, G.; Vanier, P.E.; Corderman, R.R.; Kampas, F.J.

    1984-01-01

    Wide gap (>1.9 eV), photoconductive, intrinsic amorphous silicon films were made in a uhv system from Si/sub 2/H/sub 6/-He mixtures. The hydrogen concentrations, optical gaps and photoconductivities were measured. Unlike films made from SiH/sub 4/, Si/sub 2/H/sub 6/-produced films exhibit excellent electronic properties even at low deposition temperatures. The ratio of AM1 photoconductivity to dark conductivity was as high as 10/sup 7/.

  7. Ultra-Thin-Film GaAs Solar Cells

    NASA Technical Reports Server (NTRS)

    Wang, K. L.; Shin, B. K.; Yeh, Y. C. M.; Stirn, R. J.

    1982-01-01

    Process based on organo-metallic chemical vapor deposition (OM/CVD) of trimethyl gallium with arsine forms economical ultrathin GaAs epitaxial films. Process has higher potential for low manufacturing cost and large-scale production compared with more-conventional halide CVD and liquid-phase epitaxy processes. By reducing thickness of GaAs and substituting low-cost substrate for single-crystal GaAs wafer, process would make GaAs solar cells commercially more attractive.

  8. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1979-01-01

    The optimization of space processing of GaAs is described. The detailed compositional, structural, and electronic characterization of GaAs on a macro- and microscale and the relationships between growth parameters and the properties of GaAs are among the factors discussed. The key parameters limiting device performance are assessed.

  9. Photoluminescence of Mn+ doped GaAs

    NASA Astrophysics Data System (ADS)

    Zhou, Huiying; Qu, Shengchun; Liao, Shuzhi; Zhang, Fasheng; Liu, Junpeng; Wang, Zhanguo

    2010-10-01

    Photoluminescence is one of the most useful techniques to obtain information about optoelectronic properties and defect structures of materials. In this work, the room-temperature and low temperature photoluminescence of Mn-doped GaAs were investigated, respectively. Mn-doped GaAs structure materials were prepared by Mn+ ion implantation at room temperature into GaAs. The implanted samples were subsequently annealed at various temperatures under N2 atmosphere to recrystallize the samples and remove implant damage. A strong peak was found for the sample annealed at 950 °C for 5 s. Transitions near 0.989 eV (1254 nm), 1.155 eV (1074 nm) and 1.329 eV (933 nm) were identified and formation of these emissions was analyzed for all prepared samples. This structure material could have myriad applications, including information storage, magnet-optical properties and energy level engineering.

  10. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    The handbook discusses the history of GaAs solar cell development, presents equations useful for working with GaAs solar cells, describes commonly used instrumentation techniques for assessing radiation effects in solar cells and fundamental processes occurring in solar cells exposed to ionizing radiation, and explains why radiation decreases the electrical performance of solar cells. Three basic elements required to perform solar array degradation calculations: degradation data for GaAs solar cells after irradiation with 1 MeV electrons at normal incidence; relative damage coefficients for omnidirectional electron and proton exposure; and the definition of the space radiation environment for the orbit of interest, are developed and used to perform a solar array degradation calculation.

  11. Rectification at graphene-semiconductor interfaces

    NASA Astrophysics Data System (ADS)

    Hebard, Arthur

    2013-03-01

    It is now widely recognized that interface between graphene and many semiconductors forms Schottky barriers with rectifying properties. Our work in this area at the University of Florida began in 2009 with our discovery that bulk semimetal graphite when simply pressed against Si, GaAs and 4H-SiC semiconductor substrates readily formed Schottky barriers. Since graphite comprises Bernal-stacked layers of graphene, then the outermost layer, a single sheet of graphene, in contact with the semiconductor plays a major role in the formation of the Schottky barrier. In this talk we follow up on this early work and report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of graphene and conventional semiconductors. Much of the phenomenology is similar to what is seen with graphite/semiconductor Schottky barriers but with the additional advantages that graphene is flexible, transparent and has a Fermi energy that can be more easily tuned either positively or negatively with respect to the neutrality point by electric fields or chemical doping. Our junctions are fabricated by mechanically transferring chemical vapor deposited graphene onto n-type Si, GaAs, 4H-SiC or GaN semiconductor substrates and takes advantage of the strong van der Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky) barrier. Using current-voltage (I-V), capacitance-voltage (C-V) and Raman measurements we find that thermionic emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. We will discuss a number of applications including diode operation to temperatures as high as 550 K, hole doping and associated Fermi level shifts induced by overcoating the graphene with a transparent layer of polymer (TFSA), and demonstration of solar cells with

  12. Impacts of crystal orientation of GaAs on the interfacial structures and electrical properties of Hf{sub 0.6}La{sub 0.4}O{sub x} films

    SciTech Connect

    Jia, Tingting; Kimura, Hideo; Zhao, Hongyang; Yao, Qiwen; Cheng, Zhenxiang; Cheng, Xinghong; Yu, Yuehui

    2014-04-07

    One of the major challenges in realizing the GaAs channel in the metal oxide semiconductor field effect transistor is the degrading in electron transport properties at the interface between GaAs and the gate oxide. In this study, Hf{sub 0.6}La{sub 0.4}O{sub x} gate oxide films were deposited at a low temperature (200 °C) on GaAs(111)A and GaAs(100) substrates by plasma enhanced atomic layer deposition. Microstructure analysis indicates that residuals of gallium oxide, arsenic oxide, and As element remained at the interface of Hf{sub 0.6}La{sub 0.4}O{sub x}/GaAs(100). On contrast, a smoother interface is observed between Hf{sub 0.6}La{sub 0.4}O{sub x} thin film and GaAs(111)A substrate. Furthermore, a reduction of interfacial layer is observed in Hf{sub 0.6}La{sub 0.4}O{sub x}/GaAs(111)A. Electrical characterization of the metal-insulator-semiconductor Pt/Hf{sub 0.6}La{sub 0.4}O{sub x}/n-GaAs(111)A capacitor indicated a reduction of D{sub it} and leakage current compared with the capacitor fabricated on GaAs(100)

  13. ECR plasma synthesis of silicon nitride films on GaAs and InSb

    SciTech Connect

    Barbour, J.C.; Lovejoy, M.L.; Ashby, C.I.H.; Howard, A.J.; Custer, J.S.; Shul, R.J.

    1993-12-31

    Growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiN{sub x}) films were grown at temperatures from 30 to 250 C on GaAs substrates. Stress in films was measured as a function of bias applied during growth (varied from 0 to 200 V), and of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiN{sub x} growth without an applied bias (ion energy {congruent}30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of -200 V showed the largest reduction in film stress but also the smallest PL signal.

  14. GaAs nanowire array solar cells with axial p-i-n junctions.

    PubMed

    Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

    2014-06-11

    Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics. PMID:24849203

  15. Light-Emitting Devices Based on Top-down Fabricated GaAs Quantum Nanodisks

    PubMed Central

    Higo, Akio; Kiba, Takayuki; Tamura, Yosuke; Thomas, Cedric; Takayama, Junichi; Wang, Yunpeng; Sodabanlu, Hassanet; Sugiyama, Masakazu; Nakano, Yoshiaki; Yamashita, Ichiro; Murayama, Akihiro; Samukawa, Seiji

    2015-01-01

    Quantum dots photonic devices based on the III–V compound semiconductor technology offer low power consumption, temperature stability, and high-speed modulation. We fabricated GaAs nanodisks (NDs) of sub-20-nm diameters by a top-down process using a biotemplate and neutral beam etching (NBE). The GaAs NDs were embedded in an AlGaAs barrier regrown by metalorganic vapor phase epitaxy (MOVPE). The temperature dependence of photoluminescence emission energies and the transient behavior were strongly affected by the quantum confinement effects of the embedded NDs. Therefore, the quantum levels of the NDs may be tuned by controlling their dimensions. We combined NBE and MOVPE in a high-throughput process compatible with industrial production systems to produce GaAs NDs with tunable optical characteristics. ND light emitting diode exhibited a narrow spectral width of 38 nm of high-intensity emission as a result of small deviation of ND sizes and superior crystallographic quality of the etched GaAs/AlGaAs layer. PMID:25792119

  16. Light-Emitting Devices Based on Top-down Fabricated GaAs Quantum Nanodisks

    NASA Astrophysics Data System (ADS)

    Higo, Akio; Kiba, Takayuki; Tamura, Yosuke; Thomas, Cedric; Takayama, Junichi; Wang, Yunpeng; Sodabanlu, Hassanet; Sugiyama, Masakazu; Nakano, Yoshiaki; Yamashita, Ichiro; Murayama, Akihiro; Samukawa, Seiji

    2015-03-01

    Quantum dots photonic devices based on the III-V compound semiconductor technology offer low power consumption, temperature stability, and high-speed modulation. We fabricated GaAs nanodisks (NDs) of sub-20-nm diameters by a top-down process using a biotemplate and neutral beam etching (NBE). The GaAs NDs were embedded in an AlGaAs barrier regrown by metalorganic vapor phase epitaxy (MOVPE). The temperature dependence of photoluminescence emission energies and the transient behavior were strongly affected by the quantum confinement effects of the embedded NDs. Therefore, the quantum levels of the NDs may be tuned by controlling their dimensions. We combined NBE and MOVPE in a high-throughput process compatible with industrial production systems to produce GaAs NDs with tunable optical characteristics. ND light emitting diode exhibited a narrow spectral width of 38 nm of high-intensity emission as a result of small deviation of ND sizes and superior crystallographic quality of the etched GaAs/AlGaAs layer.

  17. Light-emitting devices based on top-down fabricated GaAs quantum nanodisks.

    PubMed

    Higo, Akio; Kiba, Takayuki; Tamura, Yosuke; Thomas, Cedric; Takayama, Junichi; Wang, Yunpeng; Sodabanlu, Hassanet; Sugiyama, Masakazu; Nakano, Yoshiaki; Yamashita, Ichiro; Murayama, Akihiro; Samukawa, Seiji

    2015-01-01

    Quantum dots photonic devices based on the III-V compound semiconductor technology offer low power consumption, temperature stability, and high-speed modulation. We fabricated GaAs nanodisks (NDs) of sub-20-nm diameters by a top-down process using a biotemplate and neutral beam etching (NBE). The GaAs NDs were embedded in an AlGaAs barrier regrown by metalorganic vapor phase epitaxy (MOVPE). The temperature dependence of photoluminescence emission energies and the transient behavior were strongly affected by the quantum confinement effects of the embedded NDs. Therefore, the quantum levels of the NDs may be tuned by controlling their dimensions. We combined NBE and MOVPE in a high-throughput process compatible with industrial production systems to produce GaAs NDs with tunable optical characteristics. ND light emitting diode exhibited a narrow spectral width of 38 nm of high-intensity emission as a result of small deviation of ND sizes and superior crystallographic quality of the etched GaAs/AlGaAs layer. PMID:25792119

  18. A technique for large-area position-controlled growth of GaAs nanowire arrays.

    PubMed

    Kauppinen, Christoffer; Haggren, Tuomas; Kravchenko, Aleksandr; Jiang, Hua; Huhtio, Teppo; Kauppinen, Esko; Dhaka, Veer; Suihkonen, Sami; Kaivola, Matti; Lipsanen, Harri; Sopanen, Markku

    2016-04-01

    We demonstrate a technique for fabricating position-controlled, large-area arrays of vertical semiconductor nanowires (NWs) with adjustable periods and NW diameters. In our approach, a Au-covered GaAs substrate is first coated with a thin film of photoresponsive azopolymer, which is exposed twice to a laser interference pattern forming a 2D surface relief grating. After dry etching, an array of polymer islands is formed, which is used as a mask to fabricate a matrix of gold particles. The Au particles are then used as seeds in vapour-liquid-solid growth to create arrays of vertical GaAs NWs using metalorganic vapour phase epitaxy. The presented technique enables producing NWs of uniform size distribution with high throughput and potentially on large wafer sizes without relying on expensive lithography techniques. The feasibility of the technique is demonstrated by arrays of vertical NWs with periods of 255-1000 nm and diameters of 50-80 nm on a 2 × 2 cm area. The grown NWs exhibit high long range order and good crystalline quality. Although only GaAs NWs were grown in this study, in principle, the presented technique is suitable for any material available for Au seeded NW growth. PMID:26895144

  19. A technique for large-area position-controlled growth of GaAs nanowire arrays

    NASA Astrophysics Data System (ADS)

    Kauppinen, Christoffer; Haggren, Tuomas; Kravchenko, Aleksandr; Jiang, Hua; Huhtio, Teppo; Kauppinen, Esko; Dhaka, Veer; Suihkonen, Sami; Kaivola, Matti; Lipsanen, Harri; Sopanen, Markku

    2016-04-01

    We demonstrate a technique for fabricating position-controlled, large-area arrays of vertical semiconductor nanowires (NWs) with adjustable periods and NW diameters. In our approach, a Au-covered GaAs substrate is first coated with a thin film of photoresponsive azopolymer, which is exposed twice to a laser interference pattern forming a 2D surface relief grating. After dry etching, an array of polymer islands is formed, which is used as a mask to fabricate a matrix of gold particles. The Au particles are then used as seeds in vapour-liquid-solid growth to create arrays of vertical GaAs NWs using metalorganic vapour phase epitaxy. The presented technique enables producing NWs of uniform size distribution with high throughput and potentially on large wafer sizes without relying on expensive lithography techniques. The feasibility of the technique is demonstrated by arrays of vertical NWs with periods of 255-1000 nm and diameters of 50-80 nm on a 2 × 2 cm area. The grown NWs exhibit high long range order and good crystalline quality. Although only GaAs NWs were grown in this study, in principle, the presented technique is suitable for any material available for Au seeded NW growth.

  20. Artificial Graphene in Nano-patterned GaAs Quantum Wells

    NASA Astrophysics Data System (ADS)

    Wang, Sheng; Scarabelli, Diego; Kuznetsova, Yuliya Y.; Pfeiffer, Loren N.; West, Ken; Gardner, Geoff C.; Manfra, Michael J.; Pellegrini, Vittorio; Wind, Shalom J.; Pinczuk, Aron

    We report the realization of artificial graphene (AG) in a 2D electron gas in a highly tunable semiconductor quantum well system. Very short period (as small as 40 nm) honeycomb lattices were formed in a GaAs heterostructure by electron beam lithography followed by dry etching. Characterization of the AG samples by photoluminescence at low temperature (about 4K) indicates modulation of 2D electron states. Low-lying electron excitations observed by resonant inelastic light scattering and interpreted with a calculated AG band structure confirm the formation of AG bands with a well-defined Dirac cone, evidence for the presence of massless Dirac fermions. These results suggest that engineered semiconductor nano-scale structures can serve as advanced quantum simulators for probing novel electron behavior in low dimensional systems. Supported by DOE-BES Award DE-SC0010695.

  1. Nuclear Spin relaxation mediated by Fermi-edge electrons in n-type GaAs

    NASA Astrophysics Data System (ADS)

    Kotur, M.; Dzhioev, R. I.; Kavokin, K. V.; Korenev, V. L.; Namozov, B. R.; Pak, P. E.; Kusrayev, Yu. G.

    2014-03-01

    A method based on the optical orientation technique was developed to measure the nuclear-spin lattice relaxation time T 1 in semiconductors. It was applied to bulk n-type GaAs, where T 1 was measured after switching off the optical excitation in magnetic fields from 400 to 1200 G at low (< 30 K) temperatures. The spin-lattice relaxation of nuclei in the studied sample with n D = 9 × 1016 cm-3 was found to be determined by hyperfine scattering of itinerant electrons (Korringa mechanism) which predicts invariability of T 1 with the change in magnetic field and linear dependence of the relaxation rate on temperature. This result extends the experimentally verified applicability of the Korringa relaxation law in degenerate semiconductors, previously studied in strong magnetic fields (several Tesla), to the moderate field range.

  2. Induced superconductivity in high mobility two dimensional electron gas in GaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Rokhinson, Leonid P.

    Search for Majorana fermions renewed interest in semiconductor-superconductor interfaces, while a quest for higher order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, e.g. a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high mobility two-dimensional electron gas in GaAs heterostructures and development of highly transparent semiconductor-superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (> 16 Tesla) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two dimensional electron gas at high magnetic fields.

  3. Observation of Nondegenerate Two-Photon Gain in GaAs.

    PubMed

    Reichert, Matthew; Smirl, Arthur L; Salamo, Greg; Hagan, David J; Van Stryland, Eric W

    2016-08-12

    Two-photon lasers require materials with large two-photon gain (2PG) coefficients and low linear and nonlinear losses. Our previous demonstration of large enhancement of two-photon absorption in semiconductors for very different photon energies translates directly into enhancement of 2PG. We experimentally demonstrate nondegenerate 2PG in optically excited bulk GaAs via femtosecond pump-probe measurements. 2PG is isolated from other pump induced effects through the difference between measurements performed with parallel and perpendicular polarizations of pump and probe. An enhancement in the 2PG coefficient of nearly 2 orders of magnitude is reported. The results point a possible way toward two-photon semiconductor lasers. PMID:27563962

  4. Photoluminescence analysis of p-doped GaAs using the Roosbroeck Shockley relation

    NASA Astrophysics Data System (ADS)

    Ullrich, B.; Munshi, S. R.; Brown, G. J.

    2007-10-01

    Linking absorption with emission, the Roosbroeck-Shockley relation (RSR) expresses a fundamental principle of semiconductor optics. Despite its elementary character, the RSR is hardly advocated since it is commonly understood that the relation holds for intrinsic materials only. However, we demonstrate that the RSR reproduces very well the photoluminescence of p-doped GaAs over the temperature range of 5-300 K. The fitting parameters used, such as energy position and doping-induced band gap shrinkage, satisfactorily coincide with the literature. The presented results show that the RSR can have a much broader impact in semiconductor analysis than generally presumed. The paper is dedicated to our friend and mentor Rand R Biggers (1946-2006)

  5. Observation of Nondegenerate Two-Photon Gain in GaAs

    NASA Astrophysics Data System (ADS)

    Reichert, Matthew; Smirl, Arthur L.; Salamo, Greg; Hagan, David J.; Van Stryland, Eric W.

    2016-08-01

    Two-photon lasers require materials with large two-photon gain (2PG) coefficients and low linear and nonlinear losses. Our previous demonstration of large enhancement of two-photon absorption in semiconductors for very different photon energies translates directly into enhancement of 2PG. We experimentally demonstrate nondegenerate 2PG in optically excited bulk GaAs via femtosecond pump-probe measurements. 2PG is isolated from other pump induced effects through the difference between measurements performed with parallel and perpendicular polarizations of pump and probe. An enhancement in the 2PG coefficient of nearly 2 orders of magnitude is reported. The results point a possible way toward two-photon semiconductor lasers.

  6. Photoconductivity of ultra-thin Ge(GeSn) layers grown in Si by low-temperature molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Talochkin, A. B.; Chistokhin, I. B.; Mashanov, V. I.

    2016-04-01

    Photoconductivity (PC) spectra of Si/Ge(GeSn)/Si structures with the ultra-thin (1.0-2.3 nm) Ge and GeSn alloy layers grown by the low-temperature (T = 100 °C) molecular beam epitaxy are studied. Photoresponse in the range of 1.2-0.4 eV related to light absorption in the buried Ge(GeSn) layer is observed. It is shown that in case of lateral PC, a simple diffusion model can be used to determine the absorption coefficient of this layer α ˜ 105 cm-1. This value is 100 times larger than that of a single Ge quantum dot layer and is reached significantly above the band gap of most bulk semiconductors. The observed absorption is caused by optical transitions between electron and hole states localized at the interfaces. The anomalous high value of α can be explained by the unusual state of Ge(GeSn) layer with high concentration of dangling bonds, the optical properties of which have been predicted theoretically by Knief and von Niessen (Phys. Rev. B 59, 12940 (1999)).

  7. Surface Sum Frequency Generation of III-V Semiconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Zhenyu; Kim, Jisun; Khoury, Rami; Plummer, E. W.; Haber, Louis

    2015-03-01

    Optical sum frequency generation (SFG) is a well-established technique for surface and interface studies but its use has been limited mainly to centrosymmetric materials so far. Here, we demonstrate that femtosecond broadband SFG spectroscopy has the ability to identify surface molecular vibrations on the archetypical non-centrosymmetric semiconductor GaAs (001), in which the bulk SFG signal typically dominates over surface SFG contributions. Azimuthal angle dependence of the second order SFG nonlinear response from GaAs (001) surface in the reflection geometry in vacuum for all eight polarization combinations are detected and analyzed. The results agree with and extend upon previous second harmonic generation (SHG) studies and phenomenological analysis. In addition, carbon monoxide and methanol are employed as molecular-markers on the GaAs (001) surfaces. The C-O stretching mode of carbon monoxide and the methyl group stretching modes of methanol are clearly observed even though the bulk contribution dominates the SFG signal. Coherent heterodyne interference is proposed as the mechanism for the surface signal enhancement. Two other zinc blende type III-V semiconductors, GaP and GaSb, are also studied and compared. Funded by EFRC.

  8. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    SciTech Connect

    Nevedomskiy, V. N. Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-12-15

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.

  9. Photobiotechnology: Algal hydrogen production and photoconductivity of metalized chloroplasts

    SciTech Connect

    Greenbaum, E.

    1991-01-01

    Sustained hydrogen photoevolution from Chlamydomonas reinhardtii and C. moewusii was measured under an anoxic, CO{sub 2}-containing atmosphere. It has been discovered that light intensity and temperature influence the partitioning of reductant between the hydrogen photoevolution pathway and the Calvin cycle. Under low incident light intensity (1-3 W m{sup {minus}2}) or low temperature (approx. O{degrees}C), the flow of photosynthetic reductant to the Calvin cycle was reduced, and reductant was partitioned to the hydrogen pathway as evidenced by sustained H{sub 2} photoevolution. Under saturating light (25 W m{sup {minus}2}) and moderate temperature 20 {plus minus} 5{degrees}C, the Calvin cycle became the absolute sink for reductant with the exception of a burst of H{sub 2} occurring at light on. A novel photobiophysical phenomenon was observed in isolated spinach chloroplasts that were metalized by precipitating colloidal platinum onto the surface of the thylakoid membranes. A two-point irradiation and detection system was constructed in which a continuous beam helium-neon laser ({lambda} = 632.8 nm) was used to irradiate the platinized chloroplasts at varying perpendicular distances from a single linear platinum electrode in pressure contact with the platinized chloroplasts. No external voltage bias was applied to the system. The key objective of the experiments reported in this report was to measure the relative photoconductivity of the chloroplast-metal composite matrix. 46 refs., 1 tab.

  10. Supramolecular core-shell nanoparticles for photoconductive device applications.

    PubMed

    Cheng, Chih-Chia; Chen, Jem-Kun; Shieh, Yeong-Tarng; Lee, Duu-Jong

    2016-08-12

    We report a breakthrough discovery involving supramolecular-based strategies to construct novel core-shell heterojunction nanoparticles with hydrophilic adenine-functionalized polythiophene (PAT) as the core and hydrophobic phenyl-C61-butyric acid methyl ester (PCBM) as the shell, which enables the conception of new functional supramolecular assemblies for constructing functional nanomaterials for applications in optoelectronic devices. The generated nanoparticles exhibit uniform spherical shape, well-controlled tuning of particle size with narrow size distributions, and excellent electrochemical stability in solution and the solid state owing to highly efficient energy transfer from PAT to PCBM. When the PAT/PCBM nanoparticles were fabricated into a photoconducting layer in an electronic device, the resulting device showed excellent electric conduction characteristics, including an electrically-tunable voltage-controlled switch, and high short-circuit current and open-circuit voltage. These observations demonstrate how the self-assembly of PAT/PCBM into specific nanostructures may help to promote efficient charge generation and transport processes, suggesting potential for a wide variety of applications as a promising candidate material for bulk heterojunction polymer devices. PMID:27353003

  11. ZnO/Ag nanowires composite film ultraviolet photoconductive detector

    NASA Astrophysics Data System (ADS)

    Guodong, Yan; Minqiang, Wang; Zhi, Yang

    2015-08-01

    ZnO/Ag nanowires (NWs) film ultraviolet (UV) detector was fabricated by a simple and low-cost solution-processed method. In order to prepare this device, Ag NWs network was first spin-coated on glass substrate as a transparent conducting electrode, then ZnO NWs arrays were grown vertically on the Ag NWs network based on the hydrothermal method. This UV detector exhibited an excellent detection performance with large on/off ratio and short response time. Several process and working parameters were particularly investigated to analyze the relationship between structure and performance, which include growth time of ZnO NWs array, spin speed of Ag NWs network and working temperature. This UV photoconductive detector is based on two kinds of one-dimension nanomaterials, and it was regarded as a compromise between high performance with large area, low voltage and low cost. Project supported by the National Natural Science Foundation of China (Nos. 61176056, 91323303, 91123019), the 111 Program (No. B14040), and the Open Projects from the Institute of Photonics and Photo-Technology, Provincial Key Laboratory of Photoelectronic Technology, Northwest University, China.

  12. Supramolecular core–shell nanoparticles for photoconductive device applications

    NASA Astrophysics Data System (ADS)

    Cheng, Chih-Chia; Chen, Jem-Kun; Shieh, Yeong-Tarng; Lee, Duu-Jong

    2016-08-01

    We report a breakthrough discovery involving supramolecular-based strategies to construct novel core–shell heterojunction nanoparticles with hydrophilic adenine-functionalized polythiophene (PAT) as the core and hydrophobic phenyl-C61-butyric acid methyl ester (PCBM) as the shell, which enables the conception of new functional supramolecular assemblies for constructing functional nanomaterials for applications in optoelectronic devices. The generated nanoparticles exhibit uniform spherical shape, well-controlled tuning of particle size with narrow size distributions, and excellent electrochemical stability in solution and the solid state owing to highly efficient energy transfer from PAT to PCBM. When the PAT/PCBM nanoparticles were fabricated into a photoconducting layer in an electronic device, the resulting device showed excellent electric conduction characteristics, including an electrically-tunable voltage-controlled switch, and high short-circuit current and open-circuit voltage. These observations demonstrate how the self-assembly of PAT/PCBM into specific nanostructures may help to promote efficient charge generation and transport processes, suggesting potential for a wide variety of applications as a promising candidate material for bulk heterojunction polymer devices.

  13. Simulating photoconductive atomic-force microscopy on disordered photovoltaic materials

    NASA Astrophysics Data System (ADS)

    Blakesley, James C.; Castro, Fernando A.

    2015-04-01

    We present a tool for simulating photoconductive atomic-force microscopy (Pc-AFM) on bulk heterojunction (BHJ) materials with a minimal set of empirical parameters. The simulation is a master-equation solution of a three-dimensional hopping charge transport model which includes donor-acceptor domain morphology, energetic and spatial disorder, exciton transport and splitting, charge-pair generation and recombination, and tip-substrate electrostatics. A simplifying aspect of the model is that electron transport, hole transport, and electron-hole recombination are treated as the same electron-transfer process. The model recreates realistic bulk recombination rates, without requiring short-range Coulombic effects to be calculated. We demonstrate the tool by simulating line scans of a Pc-AFM tip passing over the surface of a buried or exposed acceptor cluster in a BHJ film. The simulations confirm experimental observations that such defects can be detected by open-circuit mode Pc-AFM imaging, even when the clusters are buried below the surface.

  14. Extreme sensitivity of graphene photoconductivity to environmental gases

    PubMed Central

    Docherty, Callum J.; Lin, Cheng-Te; Joyce, Hannah J.; Nicholas, Robin J.; Herz, Laura M.; Li, Lain-Jong; Johnston, Michael B.

    2012-01-01

    Graphene is a single layer of covalently bonded carbon atoms, which was discovered only 8 years ago and yet has already attracted intense research and commercial interest. Initial research focused on its remarkable electronic properties, such as the observation of massless Dirac fermions and the half-integer quantum Hall effect. Now graphene is finding application in touch-screen displays, as channels in high-frequency transistors and in graphene-based integrated circuits. The potential for using the unique properties of graphene in terahertz-frequency electronics is particularly exciting; however, initial experiments probing the terahertz-frequency response of graphene are only just emerging. Here we show that the photoconductivity of graphene at terahertz frequencies is dramatically altered by the adsorption of atmospheric gases, such as nitrogen and oxygen. Furthermore, we observe the signature of terahertz stimulated emission from gas-adsorbed graphene. Our findings highlight the importance of environmental conditions on the design and fabrication of high-speed, graphene-based devices. PMID:23187628

  15. Extreme sensitivity of graphene photoconductivity to environmental gases

    NASA Astrophysics Data System (ADS)

    Docherty, Callum J.; Lin, Cheng-Te; Joyce, Hannah J.; Nicholas, Robin J.; Herz, Laura M.; Li, Lain-Jong; Johnston, Michael B.

    2012-11-01

    Graphene is a single layer of covalently bonded carbon atoms, which was discovered only 8 years ago and yet has already attracted intense research and commercial interest. Initial research focused on its remarkable electronic properties, such as the observation of massless Dirac fermions and the half-integer quantum Hall effect. Now graphene is finding application in touch-screen displays, as channels in high-frequency transistors and in graphene-based integrated circuits. The potential for using the unique properties of graphene in terahertz-frequency electronics is particularly exciting; however, initial experiments probing the terahertz-frequency response of graphene are only just emerging. Here we show that the photoconductivity of graphene at terahertz frequencies is dramatically altered by the adsorption of atmospheric gases, such as nitrogen and oxygen. Furthermore, we observe the signature of terahertz stimulated emission from gas-adsorbed graphene. Our findings highlight the importance of environmental conditions on the design and fabrication of high-speed, graphene-based devices.

  16. Photoconductivity of high-voltage space insulating materials

    NASA Technical Reports Server (NTRS)

    Coffey, H. T.; Nanevicz, J. E.; Adamo, R. C.

    1975-01-01

    The dark and photoconductivities of four high voltage spacecraft insulators, Kapton-H, FEP Teflon, Parylene, and fused quartz, were studied under a variety of conditions intended to simulate a space environment. All measurements were made in a vacuum of less than .00001 torr while the temperature was varied from 22 C to 100 C. Some of the samples used employed conventional deposited metal electrodes--others employed electrodes composed either of an electron beam or a plasma formed by ionization of the residual gas in the test chamber. Test results show: (1) Kapton had unusual conduction properties; it conductivity decreased by more than an order of magnitude when heated at 100 C in a vacuum, but ultimately attained a stable and reproducible value. (2) Both Teflon and fused quartz had high dark resistivities but low photoresistivities when exposed to UV. Optical-density measurements revealed that both materials transmitted UV with little attenuation. (3) Parylene was found to have a low but relatively stable resistivity--comparatively minor changes occurred upon heating or illuminating the sample. Optical-density measurements showed that Parylene was absorbent in the UV and would prevent photoemission from the metal electrode on the back surface.

  17. Radiative decay rates of impurity states in semiconductor nanocrystals

    SciTech Connect

    Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.; Rukhlenko, Ivan D.

    2015-10-15

    Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and should be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals.

  18. Reactive codoping of GaAlInP compound semiconductors

    DOEpatents

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  19. Optically enhanced oxidation of III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Fukuda, Mitsuo; Takahei, Kenichiro

    1985-01-01

    Oxidation of III-V compound semiconductor (110) cleaved surfaces under light irradiation is studied. The light irradiation enhanced the reaction rate of oxidation but the relationship between oxide growth and oxidation time under logarithmic law scarcely changed within this experimental range. The oxidation trend observed under light irradiation is similar to that of thermal oxidation for GaP, GaAs, InP, InAs, InGaAs, and InGaAsP. Semiconductors having As as the V element tend to be easily oxidized, while those of the above mentioned six kinds of materials having Ga as the III element are quickly oxidized in their initial stage. Ternary and quaternary compound semiconductors have less tendency to be oxidized compared to their constituent binary materials. off

  20. Photoconductivity study of acid on Zinc phthalocyanine pyridine thin films

    NASA Astrophysics Data System (ADS)

    Singh, Sukhwinder; Saini, G. S. S.; Tripathi, S. K.

    2016-05-01

    The Metal Phthalocyanine (MPc) have attracted much interest because of chemical and high thermal stability. Molecules forming a crystal of MPc are held together by weak attractive Vander Waals forces. Organic semiconductors have π conjugate bonds which allow electrons to move via π-electron cloud overlaps. Conduction mechanisms for organic semiconductor are mainly through tunneling; hopping between localized states, mobility gaps, and phonon assisted hopping. The photo conductivity of thin films of these complexes changes when exposed to oxidizing and reducing gases. Arrhenius plot is used to find the thermal activation energy in the intrinsic region and impurity scattering region. Arrhenius plotsare used to find the thermal activation energy.

  1. Special Issue featuring invited articles arising from UK Semiconductors 2012

    NASA Astrophysics Data System (ADS)

    Clarke, Edmund; Wada, Osamu

    2013-07-01

    Semiconductor research has formed the basis of many technological advances over the past 50 years, and the field is still highly active, as new material systems and device concepts are developed to address new applications or operating conditions. In addition to the development of traditional semiconductor devices, the wealth of experience with these materials also allows their use as an ideal environment for testing new physics, leading to new classes of devices exploiting quantum mechanical effects that can also benefit from the advantages of existing semiconductor technology in scalability, compactness and ease of mass production. This special issue features papers arising from the UK Semiconductors 2012 Conference, held at the University of Sheffield. The annual conference covers all aspects of semiconductor research, from crystal growth, through investigations of the physics of semiconductor structures to realization of semiconductor devices and their application in emerging technologies. The 2012 conference featured over 150 presentations, including plenary sessions on interband cascade lasers for the 3-6 µm spectral band, efficient single photon sources based on InAs quantum dots embedded in GaAs photonic nanowires, nitride-based quantum dot visible lasers and single photon sources, and engineering of organic light-emitting diodes. The seven papers collected here highlight current research advances, taken from across the scope of the conference. The papers feature growth of novel nitride-antimonide material systems for mid-infrared sources and detectors, use of semiconductor nanostructures for charge-based memory and visible lasers, optimization of device structures either to reduce losses in solar cells or achieve low noise amplification in transistors, design considerations for surface-emitting lasers incorporating photonic crystals and an assessment of laser power convertors for power transfer. The editors of this special issue and the conference

  2. Reproducible group-V partial pressure rapid thermal annealing of InP and GaAs

    NASA Astrophysics Data System (ADS)

    Pearton, S. J.; Katz, A.; Geva, M.

    1990-09-01

    We compare the effectiveness of two types of SiC-coated graphite susceptors in providing degradation-free rapid thermal annealing of InP and GaAs. The first type of susceptor must be charged with the group-V species prior to any annealing cycles. Under the optimum charging conditions, effective surface protection is provided for up to five sequential high-temperature (900 °C, 10 s) anneals of GaAs, or only one anneal (750 °C, 10 s) of InP before recharging is necessary. The incorporation of small reservoirs into the susceptor allows for the provision of a constant group-V partial pressure over the wafer, and it appears that for this type of susceptor many dozens of InP or GaAs wafers can be annealed without any apparent surface degradation. The relative merits of using InAs, GaAs, or InP as the group-V source in the reservoirs have been compared, and it is found that the best protection is achieved when one uses the same semiconductor in the reservoirs as is being annealed.

  3. Ultra-broadband terahertz time-domain ellipsometric spectroscopy utilizing GaP and GaSe emitters and an epitaxial layer transferred photoconductive detector

    SciTech Connect

    Yamashita, Masatsugu Takahashi, Hideki; Otani, Chiko; Ouchi, Toshihiko

    2014-02-03

    We present a reflection-type ultra-broadband terahertz (THz) time-domain spectroscopic ellipsometry system covering the frequency range of 0.5–30 THz. GaP (110) and z-cut GaSe crystals are used as emitters to generate the THz and mid-infrared pulses, respectively, and a photoconductive antenna switch using a low-temperature grown GaAs epitaxial layer transferred on Si substrate was used as a detector. By changing the emitter between the GaP and GaSe crystals, the measurable frequency range can be easily switched from the 0.5–7.8 THz range to the 7.8–30 THz range without additional optical alignment. We demonstrated the measurement of the dielectric function in a p-type InAs wafer and the optical conductivity of an indium tin oxide (ITO) thin film. The obtained carrier density and the mobility of the ITO thin film show good agreement with that obtained by the Hall measurement.

  4. Pressure tuning of the optical properties of GaAs nanowires.

    PubMed

    Zardo, Ilaria; Yazji, Sara; Marini, Carlo; Uccelli, Emanuele; Fontcuberta i Morral, Anna; Abstreiter, Gerhard; Postorino, Paolo

    2012-04-24

    The tuning of the optical and electronic properties of semiconductor nanowires can be achieved by crystal phase engineering. Zinc-blende and diamond semiconductors exhibit pressure-induced structural transitions as well as a strong pressure dependence of the band gaps. When reduced to nanoscale dimensions, new phenomena may appear. We demonstrate the tuning of the optical properties of GaAs nanowires and the induction of a phase transition by applying an external pressure. The dependence of the E(0) gap on the applied pressure was measured, and a direct-to-indirect transition was found. Resonant Raman scattering was obtained by pressure tuning of the E(0) and the E(0) + Δ(SO) gaps with respect to the excitation energy. The resonances of the longitudinal optical modes LO and 2LO indicate the presence of electron-phonon Fröhlich interactions. These measurements show for the first time a variation of ionicity in GaAs when in nanowire form. Furthermore, the dependence of the lattice constant on applied pressure was estimated. Finally, we found a clear indication of a structural transition above 16 GPa. PMID:22443867

  5. Interface composition between Fe3O4 nanoparticles and GaAs for spintronic applications

    NASA Astrophysics Data System (ADS)

    Hihath, Sahar; Kiehl, Richard A.; Benthem, Klaus van

    2014-08-01

    Recent interest in spintronic applications has necessitated the study of magnetic materials in contact with semiconductor substrates; importantly, the structure and composition of these interfaces can influence both device functionality and the magnetic properties. Nanoscale ferromagnet/semiconductor structures are of particular interest. In this study, the interface structure between a monolayer of ferromagnetic magnetite (Fe3O4) nanoparticles and a GaAs substrate was studied using cross-sectional transmission electron microscopy techniques. It was found that a continuous amorphous oxide interface layer separates the nanoparticles from the GaAs substrate, and that iron diffused into the interface layer forming a compositional gradient. Electron energy-loss near-edge fine structures of the O K absorption edge revealed that the amorphous oxide is composed of γ-Fe2O3 directly underneath the Fe3O4 nanoparticles, followed by a solid solution of Ga2O3 and FeO and mostly Ga2O3 when approaching the buckled oxide/substrate interface. Real-space density functional theory calculations of the dynamical form factor confirmed the experimental observations. The implication of the findings on the optimization of these structures for spin injection is discussed.

  6. Reduction of sidewall interface recombination in GaAs and InGaAs active regions

    NASA Astrophysics Data System (ADS)

    Strand, Timothy Andrew

    In the continual effort to reduce the operating current in semiconductor lasers, the first step is always to reduce the size of the device. When we do so, however, we encounter a new set of challenges. As the device size decreases, the "walls close in" on the electrons and holes, that is, the sidewalls of the device become so close together that the electrons and holes can diffuse to them before recombining radiatively. The device sidewalls, are often littered with carrier traps, which act as nonradiative recombination sites for the electrons and holes. This wasted current, a small fraction of the total in larger devices, becomes the dominant current mechanism in small devices. In this work we present two techniques for limiting this sidewall interface recombination. The first uses semiconductor regrowth to remove the recombination sites that are normally formed at the air-exposed sidewalls. We use buried, in-plane lasers to demonstrate a reduction in the sidewall recombination rate by a factor of forty. In the second technique, we show that the sidewall interface recombination can also be reduced by preventing the carriers from diffusing to the sidewalls. We demonstrate two methods for reducing this lateral carrier diffusion; segmented GaAs quantum wells, and InGaAs quantum dots. In the former, we demonstrate a reduction in the low-temperature lateral carrier diffusion constant by a factor of forty-six (versus a comparable GaAs quantum well).

  7. Thermodynamic stability and band alignment at Sr-TiO3 /GaAs(001) interface

    NASA Astrophysics Data System (ADS)

    Cott, Joelson; Droopad, Ravi; Lee, Byounghak

    2015-03-01

    The successful epitaxial growth of SrTiO3 on Si showed that it is possible to integrate the functional oxides with semiconductors incorporating unique multifunctional properties of oxides into various existing semiconductor technologies. While SrTiO3 has been also deposited on GaAs without amorphous interfacial layers, the exact interface structure has been controversial; On one hand, scanning Transmission Electron Microscopy (STEM) shows As atoms at the interface. X-ray photoelectron spectroscopy (XPS) measurements, on the other hand, do not show peaks associated with As-O bonding, indicating that the GaAs/STO interface does not involve an As/oxide layer, contradicting to STEM observations. Using ab initio calculations, we determine the interfacial structure of a SrTiO3 film on a GaAs substrate to help clarify the apparently discrepancy between the XPS and the STEM measurements. The calculations reveal that, under the condition that allows atomically abrupt interfaces, the energetically most stable interface is As/Sr/TiO2 structure, in accordance with both XPS and STEM measurements. We discuss the band offsets and the possibility of in-gap states of various interface structures. This work was supported by the Air Force Office of Scientific Research, Contract FA9950-10-1-0133.

  8. Ballistic superconductivity in high mobility two dimensional electron gas in GaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Wan, Zhong; Kazakov, Aleksandr; Manfra, Michael; Pfeiffer, Loren; West, Ken; Rokhinson, Leonid

    2015-03-01

    Introduction of a Josephson field effect transistor (JoFET) concept sparked active research on proximity effects in semiconductors. Induced superconductivity and electrostatic control of critical current has been demonstrated in two-dimensional gases in InAs, graphene and topological insulators, and in one-dimensional systems including quantum spin Hall edges. Recently, interest in superconductor-semiconductor interfaces was renewed by the search for non-Abelian states when fractional quantum Hall edge states interface with superconductivity. However, the highest mobility 2D gases in GaAs, where variety of strongly correlated states including fractional quantum Hall effect can be observed, are notoriously absent from the list of materials where superconductivity have been induced. We report formation of transparent superconducting contacts to the high mobility 2DEG in GaAs and demonstrate induced superconductivity across several microns. Ballistic supercurrent has been observed across 0.6 μm of 2DEG, a regime essential to the formation of well separated non-Abelian states. High critical fields (> 16 Tesla) in NbN contacts enables investigation of a regime of an interplay between superconductivity and strongly correlated states in a 2DEG at high magnetic fields.

  9. Electron scattering study within the depletion region of the GaN(0001) and the GaAs(100) surface

    SciTech Connect

    Liu Zhi; Machuca, Francisco; Pianetta, Piero; Spicer, William E.; Pease, R.F.W.

    2004-08-30

    The energy distribution curves (EDCs) of photoelectrons emitted from the GaN(0001) negative electron affinity (NEA) surfaces are investigated along with GaAs(100) NEA surfaces. These experiments are performed at room temperature using 3.82 eV laser excitation for GaN and 1.96 eV laser excitation for GaAs. We find the main contribution to the total emitted current is the electrons that have lost an average energy of 310 meV and 140 meV, respectively, in the bandbending region (BBR). We propose that the origin of the energy loss as the electrons exit the solid is due to intervalley phonon scattering in the BBR (scattering of {gamma} electrons into the L-M valleys for GaN and L valley for GaAs). EDC studies on semiconductor NEA surfaces enable us to investigate the semiconductor electron transport property in the high-field region, which is established internally by the bandbending voltage at the surface.

  10. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  11. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    History of GaAs solar cell development is provided. Photovoltaic equations are described along with instrumentation techniques for measuring solar cells. Radiation effects in solar cells, electrical performance, and spacecraft flight data for solar cells are discussed. The space radiation environment and solar array degradation calculations are addressed.

  12. Modulating the morphology and electrical properties of GaAs nanowires via catalyst stabilization by oxygen.

    PubMed

    Han, Ning; Yang, Zaixing; Wang, Fengyun; Yip, SenPo; Dong, Guofa; Liang, Xiaoguang; Hung, TakFu; Chen, Yunfa; Ho, Johnny C

    2015-03-11

    Nowadays, III-V compound semiconductor nanowires (NWs) have attracted extensive research interest because of their high carrier mobility favorable for next-generation electronics. However, it is still a great challenge for the large-scale synthesis of III-V NWs with well-controlled and uniform morphology as well as reliable electrical properties, especially on the low-cost noncrystalline substrates for practical utilization. In this study, high-density GaAs NWs with lengths >10 μm and uniform diameter distribution (relative standard deviation σ ∼ 20%) have been successfully prepared by annealing the Au catalyst films (4-12 nm) in air right before GaAs NW growth, which is in distinct contrast to the ones of 2-3 μm length and widely distributed of σ ∼ 20-60% of the conventional NWs grown by the H2-annealed film. This air-annealing process is found to stabilize the Au nanoparticle seeds and to minimize Ostwald ripening during NW growth. Importantly, the obtained GaAs NWs exhibit uniform p-type conductivity when fabricated into NW-arrayed thin-film field-effect transistors (FETs). Moreover, they can be integrated with an n-type InP NW FET into effective complementary metal oxide semiconductor inverters, capable of working at low voltages of 0.5-1.5 V. All of these results explicitly demonstrate the promise of these NW morphology and electrical property controls through the catalyst engineering for next-generation electronics. PMID:25700210

  13. Semiconductor Bolometers Give Background-Limited Performance

    NASA Technical Reports Server (NTRS)

    Goebel, John; McMurray, Robert

    2006-01-01

    Semiconductor bolometers that are capable of detecting electromagnetic radiation over most or all of the infrared spectrum and that give background-limited performance at operating temperatures from 20 to 300 K have been invented. The term background-limited performance as applied to a bolometer, thermopile, or other infrared detector signifies that the ability to detect infrared signals that originate outside the detector is limited primarily by thermal noise attributable to the background radiation generated external to the bolometer. The signal-to-noise ratios and detectivities of the bolometers and thermopiles available prior to this invention have been lower than those needed for background-limited performance by factors of about 100 and 10, respectively. Like other electrically resistive bolometers, a device according to the invention exhibits an increase in electrical resistance when heated by infrared radiation. Depending on whether the device is operated under the customary constant- current or constant-voltage bias, the increase in electrical resistance can be measured in terms of an increase in voltage across the device or a decrease in current through the device, respectively. In the case of a semiconductor bolometer, it is necessary to filter out visible and shorter-wavelength light that could induce photoconductivity and thereby counteract all or part of the desired infrared- induced increase in resistance. The basic semiconductor material of a bolometer according to the invention is preferably silicon doped with one or more of a number of elements, each of which confers a different variable temperature coefficient of resistance. Suitable dopants include In, Ga, S, Se, Te, B, Al, As, P, and Sb. The concentration of dopant preferably lies in the range between 0.1 and 1,000 parts per billion.

  14. Metal Insulator Semiconductor Structures on Gallium Arsenide.

    NASA Astrophysics Data System (ADS)

    Connor, Sean Denis

    Available from UMI in association with The British Library. The compound semiconductor gallium arsenide and its associated aluminium alloys have been the subject of intensive research in recent years. These materials offer the advantage of high electron mobilities coupled with the ability to be 'barrier engineered' leading to high injection efficiencies in bipolar devices. From a technological viewpoint however these materials are difficult to work with and device realisation is a major problem. Both thermal and anodic oxidation of these materials fail to produce a dielectric of sufficient quality for device applications and as a result devices tend to be complex non planar, mesa structures. A technique is proposed whereby the electrical interface is separated from the dielectric by means of a thin layer of AlGaAs, carrier confinement in the active GaAs region being maintained by the potential barriers to holes and electrons formed by the GaAs-AlGaAs junction. The integrity of these barriers is maintained by the provision of a suitable 'capping' dielectric. The electrical characteristics of various dielectric systems on GaAs have been investigated by means of current -voltage, capacitance-voltage and electronic breakdown measurements. Transport mechanisms for leakage current through these systems are identified and the interface properties (viz Fermi level pinning etc.) assessed by means of a direct comparison between experimental capacitance-voltage curves and theoretical data obtained from classical theory. As a technique for producing a convenient, in house 'capping' dielectric with good electrical and mechanical properties, the plasma anodisation of deposited aluminium films has been investigated. The anodisation parameters have been optimised for oxidation of these films in a microwave sustained oxygen plasma to give alumina films of around 500 A. A qualitative model for the anodisation process, involving linear and parabolic growth kinetics is proposed and

  15. Solid phase epitaxial regrowth of (100)GaAs

    SciTech Connect

    Almonte, M I

    1996-02-01

    This thesis showed that low temperature (250 C) SPE of stoichiometrically balanced ion implanted GaAs layers can yield good epitaxial recovery for doses near the amorphization threshold. For 250 C anneals, most of the regrowth occurred in the first 10 min. HRTEM revealed much lower stacking fault density in the co-implanted sample than in the As-only and Ga-only samples with comparable doses. After low temp annealing, the nonstoichiometric samples had a large number of residual defects. For higher dose implants, very high temperatures (700 C) were needed to remove residual defects for all samples. The stoichiometrically balanced layer did not regrow better than the Ga-only and As-only samples. The co-implanted sample exhibited a thinner amorphous layer and a room temperature (RT) annealing effect. The amorphous layer regrew about 5 nm, suggesting that stoichiometrically balanced amorphous layers can regrow even at RT. Mechanisms for solid phase crystallization in (100)GasAs is discussed: nucleation and growth of randomly oriented crystallites and SPE. These two mechanisms compete in compound semiconductors at much lower temperatures than in Si. For the low dose As-only and Ga-only samples with low-temp anneals, both mechanisms are active. For this amorphization threshold dose, crystallites remain in the amorphous layer for all as-implants. 250 C annealing showed recrystallization from the surface and bulk for these samples; for the co-implant, the mechanism is not evident.

  16. Radiation effects in GaAs AMOS solar cells

    NASA Technical Reports Server (NTRS)

    Shin, B. K.; Stirn, R. J.

    1979-01-01

    The results of radiation damage produced in AMOS (Antireflecting-Metal-Oxide-Semiconductor) cells with Sb2O3 interfacial oxide layers by 1-MeV electrons are presented. The degradation properties of the cells as a function of irradiation fluences were correlated with the changes in their spectral response, C-V, dark forward, and light I-V characteristics. The active n-type GaAs layers were grown by the OM-CVD technique, using sulfur doping in the range between 3 x 10 to the 15th power and 7 x 10 to the 16th power/cu cm. At a fluence of 10 to the 16th power e/sq cm, the low-doped samples showed I sub sc degradation of 8% and V sub oc degradation of 8%. The high-doped samples showed I sub sc and V sub oc degradation of 32% and 1%, respectively, while the fill factor remained relatively unchanged for both. AMOS cells with water vapor-grown interfacial layers showed no significant change in V sub oc.

  17. Investigation on the photoconductive behaviors of an individual AlN nanowire under different excited lights

    PubMed Central

    2012-01-01

    Ultra-long AlN nanowire arrays are prepared by chemical vapor deposition, and the photoconductive performances of individual nanowires are investigated in our self-built measurement system. Individual ultra-long AlN nanowire (UAN) exhibits a clear photoconductive effect under different excited lights. We attribute the positive photocurrent response of individual UAN to the dominant molecular sensitization effect. It is found that they have a much faster response speed (a rise and decay time of about 1 ms), higher photocurrent response (2.7×106), and more reproductive working performance (the photocurrent fluctuation is lower than 2%) in the air environment. Their better photoconductive performances are comparable to many nanostructures, which are suggested to be a candidate for building promising photosensitive nanodevices in the future. PMID:22883472

  18. Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory.

    PubMed

    Yang, Yiming; Peng, Xingyue; Kim, Hong-Seok; Kim, Taeho; Jeon, Sanghun; Kang, Hang Kyu; Choi, Wonjun; Song, Jindong; Doh, Yong-Joo; Yu, Dong

    2015-09-01

    We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10(5). The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength-dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device, which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption. PMID:26226506

  19. One-dimensional organic photoconductive nanoribbons built on Zn-Schiff base complex

    SciTech Connect

    Liu Li; Shao Mingwang; Wang Xiuhua

    2010-03-15

    One-dimensional organic nanoribbons built on N-p-nitrophenylsalicylaldimine zinc complex were synthesized via a facile solvothermal route. The scanning electron microscope images revealed that the as-synthesized products were ribbon-like with width mainly of 300-600 nm, thickness of about 50 nm, and length of up to tens of micrometers. Fourier transform infrared spectrum was employed to characterize the structure. Ultraviolet-visible absorption and photoluminescence spectra showed that the products had good photoluminescent property and exhibited blue emission. The conductivity of a bundle of nanoribbons was also measured, which showed that the Schiff base zinc nanoribbons had good photoconductive property. This work might enrich the organic photoconductive materials and be applicable in light-controlled micro-devices or nano-devices in the future. - Graphical abstract: The Schiff base zinc nanoribbons nanowires exhibited good photoresponse under an incandescent lamp, which indicated their potential application as organic semiconductive or photoconductive nanodevices in the future.

  20. Growth and characterization of semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Philipose, Usha

    This thesis describes a catalytic growth approach to synthesize semiconductor nanowires with good control over their physical dimensions, chemical composition, and optical/electronic properties. Using the Vapour-Liquid-Solid growth mechanism, gold nanoclusters serve as the catalytic sites directing the growth of crystalline Zinc Selenide (ZnSe), Zinc Oxide (ZnO) and Zinc Sulphide (ZnS) nanowires with length of several microns and diameters varying from 15 nm to 100 nm. The morphology and properties of the nanowires were found to be strongly dependent on growth conditions. Optical characterization by photoluminescence spectroscopy show that the spectra is dominated by near band edge emission for low defect density nanowires in contrast to the high level of defect related emission from high defect density nanowires. The growth parameters were optimized leading to the synthesis of nanowires with minimum defect concentration. Electrical transport studies on an array of ZnSe nanowires confirm that there exists a non-uniform carrier distribution along the nanowires leading to 'super-linear' current-voltage behaviour with carrier mobilities comparable to that of bulk material. Photoconductivity measurements on ZnSe nanoribbons show that they are of good quality, enabling realization of a nanoscale photodetector with a peak efficiency of 43%. Spectral response of photoconductivity had a threshold character with edge corresponding to the ZnSe bandgap, which makes it an ideal candidate for blue and ultraviolet light detection. The effect of doping of these nanowires with transition elements such as manganese (Mn) has been studied. In this effort, the first successful attempt at synthesizing room temperature ferromagnetic nanowires has been realized. Above room temperature ferromagnetism has been observed for the first time in dilute Mn-doped crystalline ZnO nanowires. From the observed saturation magnetization, the magnetic moment per Mn atom is estimated to be in the range

  1. Measuring the magnetic-field-dependent chemical potential of a low-density three-dimensional electron gas in n -GaAs and extracting its magnetic susceptibility

    NASA Astrophysics Data System (ADS)

    Roy Choudhury, Aditya N.; Venkataraman, V.

    2016-01-01

    We report the magnetic-field-dependent shift of the electron chemical potential in bulk, n -type GaAs at room temperature. A transient voltage of ˜100 μ V was measured across a Au-Al2O3 -GaAs metal-oxide-semiconductor capacitor in a pulsed magnetic field of ˜6 T . Several spurious voltages larger than the signal that had plagued earlier researchers performing similar experiments were carefully eliminated. The itinerant magnetic susceptibility of GaAs is extracted from the experimentally measured data for four different doping densities, including one as low as 5 ×1015cm-3 . Though the susceptibility in GaAs is dominated by Landau-Peierls diamagnetism, the experimental technique demonstrated can be a powerful tool for extracting the total free carrier magnetization of any electron system. The method is also virtually independent of the carrier concentration and is expected to work better in the nondegenerate limit. Such experiments had been successfully performed in two-dimensional electron gases at cryogenic temperatures. However, an unambiguous report on having observed this effect in any three-dimensional electron gas has been lacking. We highlight the 50 year old literature of various trials and discuss the key details of our experiment that were essential for its success. The technique can be used to unambiguously yield only the itinerant part of the magnetic susceptibility of complex materials such as magnetic semiconductors and hexaborides, and thus shed light on the origin of ferromagnetism in such systems.

  2. High Infrared Photoconductivity in Films of Arsenic-Sulfide-Encapsulated Lead-Sulfide Nanocrystals

    PubMed Central

    2014-01-01

    Highly photoconductive thin films of inorganic-capped PbS nanocrystal quantum dots (QDs) are reported. Stable colloidal dispersions of (NH4)3AsS3-capped PbS QDs were processed by a conventional dip-coating technique into a thin homogeneous film of electronically coupled PbS QDs. Upon drying at 130 °C, (NH4)3AsS3 capping ligands were converted into a thin layer of As2S3, acting as an infrared-transparent semiconducting glue. Photodetectors obtained by depositing such films onto glass substrates with interdigitate electrode structures feature extremely high light responsivity and detectivity with values of more than 200 A/W and 1.2 × 1013 Jones, respectively, at infrared wavelengths up to 1400 nm. Importantly, these devices were fabricated and tested under ambient atmosphere. Using a set of time-resolved optoelectronic experiments, the important role played by the carrier trap states, presumably localized on the arsenic-sulfide surface coating, has been elucidated. Foremost, these traps enable a very high photoconductive gain of at least 200. The trap state density as a function of energy has been plotted from the frequency dependence of the photoinduced absorption (PIA), whereas the distribution of lifetimes of these traps was recovered from PIA and photoconductivity (PC) phase spectra. These trap states also have an important impact on carrier dynamics, which led us to propose a kinetic model for trap state filling that consistently describes the experimental photoconductivity transients at various intensities of excitation light. This model also provides realistic values for the photoconductive gain and thus may serve as a useful tool to describe photoconductivity in nanocrystal-based solids. PMID:25470412

  3. High infrared photoconductivity in films of arsenic-sulfide-encapsulated lead-sulfide nanocrystals.

    PubMed

    Yakunin, Sergii; Dirin, Dmitry N; Protesescu, Loredana; Sytnyk, Mykhailo; Tollabimazraehno, Sajjad; Humer, Markus; Hackl, Florian; Fromherz, Thomas; Bodnarchuk, Maryna I; Kovalenko, Maksym V; Heiss, Wolfgang

    2014-12-23

    Highly photoconductive thin films of inorganic-capped PbS nanocrystal quantum dots (QDs) are reported. Stable colloidal dispersions of (NH4)3AsS3-capped PbS QDs were processed by a conventional dip-coating technique into a thin homogeneous film of electronically coupled PbS QDs. Upon drying at 130 °C, (NH4)3AsS3 capping ligands were converted into a thin layer of As2S3, acting as an infrared-transparent semiconducting glue. Photodetectors obtained by depositing such films onto glass substrates with interdigitate electrode structures feature extremely high light responsivity and detectivity with values of more than 200 A/W and 1.2×10(13) Jones, respectively, at infrared wavelengths up to 1400 nm. Importantly, these devices were fabricated and tested under ambient atmosphere. Using a set of time-resolved optoelectronic experiments, the important role played by the carrier trap states, presumably localized on the arsenic-sulfide surface coating, has been elucidated. Foremost, these traps enable a very high photoconductive gain of at least 200. The trap state density as a function of energy has been plotted from the frequency dependence of the photoinduced absorption (PIA), whereas the distribution of lifetimes of these traps was recovered from PIA and photoconductivity (PC) phase spectra. These trap states also have an important impact on carrier dynamics, which led us to propose a kinetic model for trap state filling that consistently describes the experimental photoconductivity transients at various intensities of excitation light. This model also provides realistic values for the photoconductive gain and thus may serve as a useful tool to describe photoconductivity in nanocrystal-based solids. PMID:25470412

  4. Acoustic Wave Chemical Microsensors in GaAs

    SciTech Connect

    Albert G. Baca; Edwin J. Heller; Gregory C. Frye-Mason; John L. Reno; Richard Kottenstette; Stephen A. Casalnuovo; Susan L. Hietala; Vincent M. Hietala

    1998-09-20

    High sensitivity acoustic wave chemical microsensors are being developed on GaAs substrates. These devices take advantage of the piezoelectric properties of GaAs as well as its mature microelectronics fabrication technology and nascent micromachining technology. The design, fabrication, and response of GaAs SAW chemical microsensors are reported. Functional integrated GaAs SAW oscillators, suitable for chemical sensing, have been produced. The integrated oscillator requires 20 mA at 3 VK, operates at frequencies up to 500 MHz, and occupies approximately 2 mmz. Discrete GaAs sensor components, including IC amplifiers, SAW delay lines, and IC phase comparators have been fabricated and tested. A temperature compensation scheme has been developed that overcomes the large temperature dependence of GaAs acoustic wave devices. Packaging issues related to bonding miniature flow channels directly to the GaAs substrates have been resolved. Micromachining techniques for fabricating FPW and TSM microsensors on thin GaAs membranes are presented and GaAs FPW delay line performance is described. These devices have potentially higher sensitivity than existing GaAs and quartz SAW sensors.

  5. Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires.

    PubMed

    Chen, Yujie; Burgess, Tim; An, Xianghai; Mai, Yiu-Wing; Tan, H Hoe; Zou, Jin; Ringer, Simon P; Jagadish, Chennupati; Liao, Xiaozhou

    2016-03-01

    Stacking faults (SFs) are commonly observed crystalline defects in III-V semiconductor nanowires (NWs) that affect a variety of physical properties. Understanding the effect of SFs on NW mechanical properties is critical to NW applications in nanodevices. In this study, the Young's moduli of GaAs NWs with two distinct structures, defect-free single crystalline wurtzite (WZ) and highly defective wurtzite containing a high density of SFs (WZ-SF), are investigated using combined in situ compression transmission electron microscopy and finite element analysis. The Young's moduli of both WZ and WZ-SF GaAs NWs were found to increase with decreasing diameter due to the increasing volume fraction of the native oxide shell. The presence of a high density of SFs was further found to increase the Young's modulus by 13%. This stiffening effect of SFs is attributed to the change in the interatomic bonding configuration at the SFs. PMID:26885570

  6. Interfacial study and band alignment of ultrathin La2Hf2O7 films on GaAs substrates

    NASA Astrophysics Data System (ADS)

    Wei, F.; Xiong, Y.-H.; Zhang, X.-Q.; Du, J.; Tu, H.-L.

    2013-09-01

    We report ultrathin amorphous La2Hf2O7 (LHO) films grown on p-GaAs (0 0 1) substrates as high-k gate dielectric using the pulsed laser deposition method. Interfacial characterization of the LHO/GaAs has been carried out. It shows that the interfacial layer with a thickness of less than 0.5 nm is composed of Ga2O3. Experimental results show that the 5.7 ± 0.1 eV bandgap of LHO is aligned to the bandgap of GaAs with a valence band offset of 3.15 ± 0.05 eV and a conduction band offset of 1.1 ± 0.1 eV. Capacitance-voltage and current-voltage measurements indicate that LHO could be a promising gate dielectric for GaAs metal-oxide-semiconductor devices.

  7. Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope

    NASA Astrophysics Data System (ADS)

    Geydt, P.; Alekseev, P. A.; Dunaevskiy, M.; Lähderanta, E.; Haggrén, T.; Kakko, J.-P.; Lipsanen, H.

    2015-12-01

    In this work we demonstrate the possibility of studying the current-voltage characteristics for single vertically standing semiconductor nanowires on standard AFM equipped by current measuring module in PeakForce Tapping mode. On the basis of research of eight different samples of p-doped GaAs nanowires grown on different GaAs substrates, peculiar electrical effects were revealed. It was found how covering of substrate surface by SiOx layer increases the current, as well as phosphorous passivation of the grown nanowires. Elimination of the Schottky barrier between golden cap and the top parts of nanowires was observed. It was additionally studied that charge accumulation on the shell of single nanowires affects its resistivity and causes the hysteresis loops on I-V curves.

  8. Competition between inverse piezoelectric effect and deformation potential mechanism in undoped GaAs revealed by ultrafast acoustics

    NASA Astrophysics Data System (ADS)

    Vaudel, G.; Ruello, P.; Pezeril, T.; Gusev, V.

    2013-03-01

    By using the picosecond ultrasonics technique, piezoelectric effect in <111> GaAs undoped sample at both faces (A[111] and B[-1-1-1]) is experimentally studied. We demonstrate that piezoelectric generation of sound can dominate in <111> GaAs material over the deformation potential mechanism even in the absence of static externally applied or built-in electric field in the semiconductor material. In that case, the Dember field, caused by the separation of photo-generated electrons and holes in the process of supersonic diffusion, is sufficient for the dominance of the piezoelectric mechanism during the optoacoustic excitation. The experimental results on the sample at both faces reveal that in one case (A face), the two mechanisms, piezoelectric effect and deformation potential, can compensate each other leading to a large decrease of the measured Brillouin oscillation magnitude.

  9. Light-soaking effects on photoconductivity in a-Si:H thin films

    SciTech Connect

    Morgado, E.; Da Silva, M.R.; Henriques, R.T.

    1997-07-01

    Metastable defects have been created by light exposure in thin films of a-Si:H. The samples have been characterized by Photothermal Deflection Spectroscopy, Electron Spin Resonance, dark- and photo-conductivity. The experimental results are consistent with numerical calculations with a recombination model involving band tails and one class of correlated dangling-bond states. The effects of light-soaking on the light intensity and defect density dependences of photoconductivity are reproduced by the calculations. The model allows to explain the experimental trends by changes in the electronic occupation of the gap states produced by light-induced defects.

  10. Time-of-flight x-ray photoconductivity of HgI2

    NASA Astrophysics Data System (ADS)

    Kurtz, S. R.; Hughes, R. C.; Ortale, C.; Schnepple, W. F.

    1987-11-01

    Time-of-flight photoconductivity measurements were performed on HgI2 using a penetrating, pulsed x-ray source, simulating the operation of photoconductive x-ray detectors. By examining a variety of HgI2 samples, a wide range of electron and hole mobilities were observed, but in all cases hole transport was highly localized, limiting the collection of the photocarriers in HgI2 detectors. The intrinsic photocarrier generation and recombination processes differed from classical Onsager and Langevin mechanisms observed in low-mobility photoconductors.

  11. Dynamic charge-carrier-mobility-mediated holography in thin layers of photoconducting polymers

    NASA Astrophysics Data System (ADS)

    Bartkiewicz, S.; Miniewicz, A.; Sahraoui, B.; Kajzar, F.

    2002-11-01

    The dynamic holography technique is proposed for the measurement of the charge-carrier-mobility in thin layers of a photoconducting polymer, used in optically addressed liquid-crystal spatial light modulators. The photorefractive properties of these modulators are studied under short-pulse (20 ps, 532 nm) laser illumination conditions and the charge mobility in the photoconducting polymer (muh=10-7 cm2/V s) is obtained from the temporal evolution of intensity of the first-order diffracted beam. A mechanism responsible for the grating formation is proposed and discussed.

  12. Study of photoconductivity in Ni doped CdS thin films prepared by spray pyrolysis technique

    SciTech Connect

    Patidar, Manju Mishra Gangrade, Mohan; Nath, R.; Ganesan, V.; Ajay, Akhil; Wala, Arwa Dewas; N, Kiran; Panda, Richa

    2014-04-24

    Ni-doped cadmium sulphide [Cd{sub 1−x}Ni{sub x}S, (x=0, 0.03, 0.05 and 0.20)] thin films were investigated for photoconductive properties. The films were prepared by spray Pyrolysis technique (SPT). AFM and two probe resistivity measurements were carried out to analyze the morphological and electrical properties of the films. AFM shows the note worthy changes in the morphology where the nanorod structures in CdS is changed into nano particles with the Ni doping. The presence of persistence photo current is demonstrated and extensive photoconductivity analysis has been studied on these films.

  13. Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1-yBiy

    NASA Astrophysics Data System (ADS)

    Forghani, Kamran; Guan, Yingxin; Wood, Adam W.; Anand, Amita; Babcock, Susan E.; Mawst, Luke J.; Kuech, Thomas F.

    2014-06-01

    Theoretical and experimental studies have confirmed that the GaAs1-yBiy semiconductor alloy system has potential for long wavelength applications and devices with improved performance over other materials emitting at similar wavelengths. The growth of GaAs1-yBiy by metal-organic vapor phase epitaxy (MOVPE) remains a challenge; bismuth is not easily incorporated into the GaAs matrix due the large difference in electronegativity and covalent radii between As and Bi. These differences often lead to Bi surface segregation or very low incorporation rates of Bi into the GaAs matrix. We have studied the growth of GaAs1-yBiy quantum well structures using trimethyl bismuth as the Bi source. A reduced growth rate is observed with increasing Bi precursor flux into the growth reactor. Additionally, an increase in the growth time for the Bi-containing layer at very low growth temperatures does not lead to a corresponding increase in layer thickness, which is indicative of a near self-limiting growth. Complex compositional profiles deduced from combining x-ray diffraction analysis with the transmission electron microscopy investigations are used to develop a phenomenological model of the MOVPE growth of GaAs1-yBiy heterostructures which includes a complex interplay of the chemical surface species. The presence of a methyl-terminated surface, associated with the use of trimethyl Bi, particularly at low growth temperatures, leads to an effective “site blocking” by Bi precursor inhibiting the growth of GaAs1-yBiy hetero-structures.

  14. Nanocavity effects on misfit accommodation in semiconductors

    SciTech Connect

    Myers, S.M.; Follstaedt, D.M.; Floro, J.A.; Lee, S.R.; Dawson, L.R.; Reno, J.L.

    1997-04-01

    The authors report an experimental and theoretical examination of the interaction of dislocations with microscopic cavities in semiconductors and the consequences for strain relaxation in heteroepitaxial structures. Dislocation-mediated relaxation and control of the resulting defect microstructure is central to the exploitation of such heterostructures in devices, and they demonstrate here that the introduction of nanometer-scale voids provides a means of strongly influencing this microstructural evolution. Methods for nanocavity formation using He ion implantation and annealing were developed for Si, SiGe on Si, GaAs, and InGaAs on GaAs. In detailed microstructural studies of SiGe on Si, cavities in the interfacial zone were shown to bind dislocations strongly. This effect reduced the excursion of dislocations into the nearby matrix, although threads into the SiGe overlayer were not eliminated. Interfacial cavities also increased the rate of stress relaxation by more than an order of magnitude as a result of enhanced nucleation of misfit dislocations. Further, in the presence of such cavities, the development of thickness variations in the overlayer during relaxation was suppressed. A theoretical model was developed to describe semiquantitatively the forces on dislocations arising from the combined influences of cavities, misfit strain, and the external surface. Predictions of this model are in accord with microstructural observations.

  15. Semiconductor structures for repeated velocity overshoot

    NASA Astrophysics Data System (ADS)

    Cooper, J. A., Jr.; Capasso, F.; Thornber, K. K.

    1982-12-01

    The conditions required for obtaining repeated velocity overshoot in semiconductors are discussed. Two classes of structures that provide these conditions are considered. The structures are seen as holding promise for achieving average drift velocities well in excess of the maximum steady-state velocity over distances ranging from submicron to tens of microns. In structures of the first class, the stairstep in potential is achieved by using a graded bandgap that is similar to the avalanche photodetector described by Williams et al. (1982), where the composition is graded from GaAs to Al(0.2)Ga(0.8)As. The second class of structures uses alternating planar doped charge sheets, as described by Malik et al. (1980).

  16. Discontinuous envelope function in semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Drouhin, Henri-Jean; Bottegoni, Federico; Nguyen, T. L. Hoai; Wegrowe, Jean-Eric; Fishman, Guy

    2013-09-01

    Based on a proper definition of the current operators for non-quadratic Hamiltonians, we derive the expression for the transport current which involves the derivative of the imaginary part of the free-electron current, highlighting peculiarities of the extra terms. The expression of the probability current, when Spin-Orbit Interaction (SOI) is taken into account, requires a reformulation of the boudary conditions. This is especially important for tunnel heterojunctions made of non-centrosymmetric semiconductors. Therefore, we consider a model case: tunneling of conduction electrons through a [110]-oriented GaAs barrier. The new boundary conditions are reduced to two set of equations: the first one expresses the discontinuity of the envelope function at the interface while the other one expresses the discontinuity of the derivative of the envelope function.

  17. GaAs shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1981-01-01

    The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

  18. LEC GaAs for integrated circuit applications

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

    1984-01-01

    Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

  19. Magnetic anisotropy in ultrathin Fe films on GaAs, ZnSe, and Ge (001) substrates

    SciTech Connect

    Tivakornsasithorn, K.; Liu, X.; Li, X.; Dobrowolska, M.; Furdyna, J. K.

    2014-07-28

    We discuss magnetic anisotropy parameters of ferromagnetic body-centered cubic (bcc) Fe films grown by molecular beam epitaxy (MBE) on (001) substrates of face-centered cubic (fcc) GaAs, ZnSe, and Ge. High-quality MBE growth of these metal/semiconductor combinations is made possible by the fortuitous atomic relationship between the bcc Fe and the underlying fcc semiconductor surfaces, resulting in excellent lattice match. Magnetization measurements by superconducting quantum interference device (SQUID) indicate that the Fe films grown on (001) GaAs surfaces are characterized by a very strong uniaxial in-plane anisotropy; those grown on (001) Ge surfaces have a fully cubic anisotropy; and Fe films grown on ZnSe represent an intermediate case between the preceding two combinations. Ferromagnetic resonance measurements carried out on these three systems provide a strikingly clear quantitative picture of the anisotropy parameters, in excellent agreement with the SQUID results. Based on these results, we propose that the observed anisotropy of cubic Fe films grown in this way results from the surface reconstruction of the specific semiconductor substrate on which the Fe film is deposited. These results suggest that, by controlling surface reconstruction of the substrate during the MBE growth, one may be able to engineer the magnetic anisotropy in Fe, and possibly also in other MBE-grown ferromagnetic films.

  20. Piezoelectric field in strained GaAs.

    SciTech Connect

    Chow, Weng Wah; Wieczorek, Sebastian Maciej

    2005-11-01

    This report describes an investigation of the piezoelectric field in strained bulk GaAs. The bound charge distribution is calculated and suitable electrode configurations are proposed for (1) uniaxial and (2) biaxial strain. The screening of the piezoelectric field is studied for different impurity concentrations and sample lengths. Electric current due to the piezoelectric field is calculated for the cases of (1) fixed strain and (2) strain varying in time at a constant rate.

  1. Comparison of Analytic and Numerical Models With Commercially Available Simulation Tools for the Prediction of Semiconductor Freeze-Out and Exhaustion

    NASA Astrophysics Data System (ADS)

    Reeves, Derek E.

    2002-09-01

    This thesis reports on three procedures and the associated numerical results for obtaining semiconductor majority carrier concentrations when subjected to a temperature sweep. The capability of predicting the exhaustion regime boundaries of a semiconductor is critical in understanding and exploiting the full potential of the modern integrated circuit. An efficient and reliable method is needed to accomplish this task. Silvaco International's semiconductor simulation software was used to predict temperature dependent majority carrier concentration for a semiconductor cell. Comparisons with analytical and numerical MATLAB-based schemes were made. This was done for both Silicon and GaAs materials. Conditions of the simulations demonstrated effect known as Bandgap Narrowing.

  2. Eight-Bit-Slice GaAs General Processor Circuit

    NASA Technical Reports Server (NTRS)

    Weissman, John; Gauthier, Robert V.

    1989-01-01

    Novel GaAs 8-bit slice enables quick and efficient implementation of variety of fast GaAs digital systems ranging from central processing units of computers to special-purpose processors for communications and signal-processing applications. With GaAs 8-bit slice, designers quickly configure and test hearts of many digital systems that demand fast complex arithmetic, fast and sufficient register storage, efficient multiplexing and routing of data words, and ease of control.

  3. UV laser activated digital etching of GaAs

    SciTech Connect

    Meguro, T.; Aoyagi, Y.

    1996-12-31

    The self-limited etching characteristics of digital etching employing an UV laser/Cl{sub 2}/GaAs system are presented. The self-limiting nature is the key mechanism and plays an important role in digital etching for obtaining etch rates independent of etching parameters. Surface processes based on photodissociation of physisorbed chlorine on GaAs with diffusion of negatively charged Cl into GaAs are also discussed.

  4. Apparatus for measuring minority carrier lifetimes in semiconductor materials

    DOEpatents

    Ahrenkiel, Richard K.

    1999-01-01

    An apparatus for determining the minority carrier lifetime of a semiconductor sample includes a positioner for moving the sample relative to a coil. The coil is connected to a bridge circuit such that the impedance of one arm of the bridge circuit is varied as sample is positioned relative to the coil. The sample is positioned relative to the coil such that any change in the photoconductance of the sample created by illumination of the sample creates a linearly related change in the input impedance of the bridge circuit. In addition, the apparatus is calibrated to work at a fixed frequency so that the apparatus maintains a consistently high sensitivity and high linearly for samples of different sizes, shapes, and material properties. When a light source illuminates the sample, the impedance of the bridge circuit is altered as excess carriers are generated in the sample, thereby producing a measurable signal indicative of the minority carrier lifetimes or recombination rates of the sample.

  5. Photoelectrosynthesis at semiconductor electrodes

    SciTech Connect

    Nozik, A. J.

    1980-12-01

    The general principles of photoelectrochemistry and photoelectrosynthesis are reviewed and some new developments in photoelectrosynthesis are discussed. Topics include energetics of semiconductor-electrolyte interfaces(band-edge unpinning); hot carrier injection at illuminated semiconductor-electrolyte junctions; derivatized semiconductor electrodes; particulate photoelectrochemical systems; layered compounds and other new materials; and dye sensitization. (WHK)

  6. High efficiency, low cost thin GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1982-01-01

    The feasibility of fabricating space-resistant, high efficiency, light-weight, low-cost GaAs shallow-homojunction solar cells for space application is demonstrated. This program addressed the optimal preparation of ultrathin GaAs single-crystal layers by AsCl3-GaAs-H2 and OMCVD process. Considerable progress has been made in both areas. Detailed studies on the AsCl3 process showed high-quality GaAs thin layers can be routinely grown. Later overgrowth of GaAs by OMCVD has been also observed and thin FaAs films were obtained from this process.

  7. Quantum coherence in semiconductor nanostructures for improved lasers and detectors.

    SciTech Connect

    Chow, Weng Wah Dr.; Lyo, Sungkwun Kenneth; Cederberg, Jeffrey George; Modine, Normand Arthur; Biefeld, Robert Malcolm

    2006-02-01

    The potential for implementing quantum coherence in semiconductor self-assembled quantum dots has been investigated theoretically and experimentally. Theoretical modeling suggests that coherent dynamics should be possible in self-assembled quantum dots. Our experimental efforts have optimized InGaAs and InAs self-assembled quantum dots on GaAs for demonstrating coherent phenomena. Optical investigations have indicated the appropriate geometries for observing quantum coherence and the type of experiments for observing quantum coherence have been outlined. The optical investigation targeted electromagnetically induced transparency (EIT) in order to demonstrate an all optical delay line.

  8. Transport Experiments on 2D Correlated Electron Physics in Semiconductors

    SciTech Connect

    Tsui, Daniel

    2014-03-24

    This research project was designed to investigate experimentally the transport properties of the 2D electrons in Si and GaAs, two prototype semiconductors, in several new physical regimes that were previously inaccessible to experiments. The research focused on the strongly correlated electron physics in the dilute density limit, where the electron potential energy to kinetic energy ratio rs>>1, and on the fractional quantum Hall effect related physics in nuclear demagnetization refrigerator temperature range on samples with new levels of purity and controlled random disorder.

  9. Anomalous high photoconductivity in short channel indium-zinc-oxide photo-transistors

    SciTech Connect

    Choi, Hyun-Sik; Jeon, Sanghun

    2015-01-05

    Upon light exposure, an indium-zinc-oxide (IZO) thin-film transistor (TFT) presents higher photoconductivity by several orders of magnitude at the negative gate bias region. Among various device geometrical factors, scaling down the channel length of the photo-transistor results in an anomalous increase in photoconductivity. To probe the origin of this high photoconductivity in short-channel device, we measured transient current, current–voltage, and capacitance–voltage characteristics of IZO–TFTs with various channel lengths and widths before and after illumination. Under the illumination, the equilibrium potential region which lies far from front interface exists only in short-channel devices, forming the un-depleted conducting back channel. This region plays an important role in carrier transport under the illumination, leading to high photoconductivity in short-channel devices. Photon exposure coupled with gate-modulated band bending for short-channel devices leads to the accumulation of V{sub o}{sup ++} at the front channel and screening negative gate bias, thereby generating high current flow in the un-depleted back-channel region.

  10. Anomalous high photoconductivity in short channel indium-zinc-oxide photo-transistors

    NASA Astrophysics Data System (ADS)

    Choi, Hyun-Sik; Jeon, Sanghun

    2015-01-01

    Upon light exposure, an indium-zinc-oxide (IZO) thin-film transistor (TFT) presents higher photoconductivity by several orders of magnitude at the negative gate bias region. Among various device geometrical factors, scaling down the channel length of the photo-transistor results in an anomalous increase in photoconductivity. To probe the origin of this high photoconductivity in short-channel device, we measured transient current, current-voltage, and capacitance-voltage characteristics of IZO-TFTs with various channel lengths and widths before and after illumination. Under the illumination, the equilibrium potential region which lies far from front interface exists only in short-channel devices, forming the un-depleted conducting back channel. This region plays an important role in carrier transport under the illumination, leading to high photoconductivity in short-channel devices. Photon exposure coupled with gate-modulated band bending for short-channel devices leads to the accumulation of Vo++ at the front channel and screening negative gate bias, thereby generating high current flow in the un-depleted back-channel region.

  11. Photoconductivity and trap-related decay in porous TiO2/ZnO nanocomposites

    NASA Astrophysics Data System (ADS)

    Wu, Jun; Li, Huayao; Liu, Yuan; Xie, Changsheng

    2011-12-01

    Photoconductivity and trap-related decay were investigated in porous TiO2/ZnO nanocomposites. Photoconductivity responses of TiO2 and ZnO were completely different, which were attributed to electron-scavenging effect and hole trapping effect, respectively. When the mole ratio of TiO2:ZnO was from 9:1 to 6:4, the photoconductivity responses were consistent with TiO2. On the contrary, when the mole ratio of TiO2:ZnO was from 4:6 to 1:9, the photoconductivity responses were controlled by ZnO. Time constants were obtained by fitting the experiment data with an exponential function. We found that they tended to get larger with the percentage of ZnO while a turning point appeared at TiO2:ZnO = 1:9. The pattern was assigned to different carrier trapping mechanisms as well as carrier separation. Composition effect was defined by a quantitative formula to evaluate the recombination processes of composite materials. A mechanism was proposed to explain this phenomenon.

  12. Temperature dependence of photoconductivity in Zn-doped GaN

    SciTech Connect

    Reshchikov, Michael A.

    2014-02-21

    In agreement with predictions from a model that explained an abrupt thermal quenching of the blue luminescence (BL) band in high-resistivity Zn-doped GaN [Reshchikov et al., Phys. Rev. B 84, 075212 (2011) and Phys. Rev. B 85, 245203 (2012)], we observed the stepwise decrease of photoconductivity in this material with increasing temperature. For the sample studied in this work, the decrease in photoconductivity occurred in two steps at characteristic temperatures T{sub 1} and T{sub 2}. The characteristic temperatures increased with increasing excitation intensity, very similar to the photoluminescence (PL) behavior. The steps in photoconductivity at about 100 K and 200 K are attributed to drop in the concentration of free electrons due to the thermal emission of holes from a shallow acceptor and the Zn{sub Ga} acceptor, respectively, to the valence band and their recombination with electrons via nonradiative centers. This finding supports the model suggested previously and helps to explain other examples of tunable photoconductivity reported in literature.

  13. Photoconductive terahertz near-field detector with a hybrid nanoantenna array cavity

    SciTech Connect

    Mitrofanov, Oleg; Brener, Igal; Luk, Ting S.; Reno, John L.

    2015-11-19

    Nanoscale structuring of optical materials leads to modification of their properties and can be used for improving efficiencies of photonic devices and for enabling new functionalities. In ultrafast optoelectronic switches for generation and detection of terahertz (THz) radiation, incorporation of nanostructures allows us to overcome inherent limitations of photoconductive materials. We propose and demonstrate a nanostructured photoconductive THz detector for sampling highly localized THz fields, down to the level of λ/150. The nanostructure that consists of an array of optical nanoantennas and a distributed Bragg reflector forms a hybrid cavity, which traps optical gate pulses within the photoconductive layer. The effect of photon trapping is observed as enhanced absorption at a designed wavelength. This optically thin photoconductive THz detector allows us to detect highly confined evanescent THz fields coupled through a deeply subwavelength aperture as small as 2 μm (λ/150 at 1 THz). As a result, by monolithically integrating the THz detector with apertures ranging from 2 to 5 μm we realize higher spatial resolution and higher sensitivity in aperture-type THz near-field microscopy and THz time-domain spectroscopy.

  14. Improvement in thermal barriers to intense terahertz generation from photoconductive antennas

    SciTech Connect

    Ropagnol, X.; Bouvier, Marcel; Reid, M.; Ozaki, T.

    2014-07-28

    We study the generation of free-space terahertz (THz) pulses at low THz frequencies using 6H-SiC and 4H-SiC photoconductive antennas. We investigate the dependence of the THz electric field radiated from the biased SiC emitters on the applied bias field and on the incident optical fluence. In this work, bias fields as high as 32 kV/cm, and optical fluences up to 2.5 mJ/cm{sup 2} (for the 400 nm laser), and 7.5 mJ/cm{sup 2} (for the 800 nm laser) were used. THz generation with back- and front-side illumination of the antennas is also examined. It is found that the SiC antenna, when illuminated from the backside, generates higher THz electric fields. The performance of 6H-SiC and ZnSe photoconductive antennas are compared. We show that, taking advantage of the superior thermal properties of SiC compare with ZnSe, the THz output power generated with the 6H-SiC photoconductive antenna under optimum conditions is 2.3 times larger that with a ZnSe photoconductive antenna.

  15. Photoconductive terahertz near-field detector with a hybrid nanoantenna array cavity

    DOE PAGESBeta

    Mitrofanov, Oleg; Brener, Igal; Luk, Ting S.; Reno, John L.

    2015-11-19

    Nanoscale structuring of optical materials leads to modification of their properties and can be used for improving efficiencies of photonic devices and for enabling new functionalities. In ultrafast optoelectronic switches for generation and detection of terahertz (THz) radiation, incorporation of nanostructures allows us to overcome inherent limitations of photoconductive materials. We propose and demonstrate a nanostructured photoconductive THz detector for sampling highly localized THz fields, down to the level of λ/150. The nanostructure that consists of an array of optical nanoantennas and a distributed Bragg reflector forms a hybrid cavity, which traps optical gate pulses within the photoconductive layer. Themore » effect of photon trapping is observed as enhanced absorption at a designed wavelength. This optically thin photoconductive THz detector allows us to detect highly confined evanescent THz fields coupled through a deeply subwavelength aperture as small as 2 μm (λ/150 at 1 THz). As a result, by monolithically integrating the THz detector with apertures ranging from 2 to 5 μm we realize higher spatial resolution and higher sensitivity in aperture-type THz near-field microscopy and THz time-domain spectroscopy.« less

  16. Comparison of radiation damage parameter values for the widely used semiconductor gamma detector materials in wide energy range

    NASA Astrophysics Data System (ADS)

    Korkut, Turgay; Korkut, Hatun

    2014-04-01

    Number of displaced atoms (NDA) values for 3 different semiconductor detector materials (Ge, Si, and GaAs) was reviewed at 26 different primary energies emitted from 9 radiation sources (241Am, 133Ba, 109Cd, 57Co, 60Co, 137Cs, 152Eu, 55Fe and 153Gd) widely used in the literature. FLUKA Monte Carlo code was used to simulate interactions between X-gamma rays and semiconductor detector materials. Germanium has the highest average NDA value in the studied three semiconductors.

  17. Theory and modeling of electrically tunable metamaterial devices using inter-subband transitions in semiconductor quantum wells.

    PubMed

    Gabbay, Alon; Brener, Igal

    2012-03-12

    In this paper, we propose a new and versatile mechanism for electrical tuning of planar metamaterials: strong coupling of metamaterial resonances to engineered intersubband transitions that can be tuned through the application of an electrical bias. We present the general formalism that allows calculating the permittivity tensor for intersubband transitions in generic semiconductor heterostructures and we study numerically the specific case of coupling and tuning metamaterials in the thermal infrared through coupling to biased GaAs semiconductor quantum wells. This tuning mechanism can be scaled from the visible to the far infrared by the proper choice of metamaterials and semiconductor heterostructures. PMID:22418541

  18. A survey of ohmic contacts to III-V compound semiconductors

    SciTech Connect

    Baca, A.G.; Zolper, J.C.; Briggs, R.D.; Ren, F.; Pearton, S.J.

    1997-04-01

    A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented along with critical issues pertaining to each semiconductor material. Au-based alloys (e.g., GeAuNi for n-type GaAs) are the most commonly used contacts for GaAs and InP materials for both n- and p-type contacts due to the excellent contact resistivity, reliability, and usefulness over a wide range of doping levels. Research into new contacting schemes for these materials has focused on addressing limitations of the conventional Au-alloys in thermal stability, propensity for spiking, poor edge definition, and new approaches for a non-alloyed contact. The alternative contacts to GaAs and InP include alloys with higher temperature stability, contacts based on solid phase regrowth, and contacts that react with the substrate to form lower bandgap semiconductors alloys at the interface. A new area of contact studies is for the wide bandgap group III-Nitride materials. At present, low resistivity ohmic contact to p-type GaN has not been obtained primarily due to the large acceptor ionization energy and the resultant difficulty in achieving high free hole concentrations at room temperature. For n-type GaN, however, significant progress has been reported with reactive Ti-based metalization schemes or the use of graded InGaN layers. The present status of these approaches will be reviewed.

  19. Nanophase evolution at semiconductor/electrolyte interface in situ probed by time-resolved high-energy synchrotron x-ray diffraction.

    SciTech Connect

    Sun, Y.; Ren, Y.; Haeffner, D. R.; Almer, J. D.; Wang, L.; Yang, W.; Truong, T. T.

    2010-09-01

    Real-time evolution of nanoparticles grown at the semiconductor/electrolyte interface formed between a single crystalline n-type GaAs wafer and an aqueous solution of AgNO{sub 3} has been studied by using high-energy synchrotron X-ray diffraction. The results reveal the distinct nucleation and growth steps involved in the growth of anisotropic Ag nanoplates on the surface of the GaAs wafer. For the first time, a quick transit stage is observed to be responsible for the structural transformation of the nuclei to form structurally stable seeds that are critical for guiding their anisotropic growth into nanoplates. Reaction between a GaAs wafer and AgNO{sub 3} solution at room temperature primarily produces Ag nanoplates on the surface of the GaAs wafer in the dark and at room temperature. In contrast, X-ray irradiation can induce charge separation in the GaAs wafer to drive the growth of nanoparticles made of silver oxy salt (Ag{sub 7}NO{sub 11}) and silver arsenate (Ag{sub 3}AsO{sub 4}) at the semiconductor/electrolyte interface if the GaAs wafer is illuminated by the X-ray and reaction time is long enough.

  20. Rare Earth Doped Semiconductors and Materials Research Society Symposium Proceedings, Volume 301

    NASA Astrophysics Data System (ADS)

    Ballance, John

    1994-02-01

    The properties of rare earth ions in solids were studied in detail for decades, but until recently this work was restricted to dominantly ionic hosts such as fluorides and oxides, and to a lesser extent to more covalently bonded hosts, such as tetrahedral 2-6 semiconductors. The idea of rare earth elements incorporated into covalent semiconductors such as GaAs and Si may be traced to a short communication in 1963 by R.L. Bell (J. Appl. Phys. 34, 1563 (1963)) proposing a dc-pumped rare earth laser. At about the same time, three unpublished technical reports appeared as a result of U.S. Department of Defense sponsored research in rare earth doped Si, GaAs, and InP to fabricate LED's. Attempts by other researchers to identify sharp 4f specific emissions in these hosts essentially failed.