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Sample records for gaas photoconductive semiconductor

  1. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  2. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  3. High gain GaAs photoconductive semiconductor switches: Switch longevity

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; Mar, A.

    1998-07-01

    Optically activated, high gain GaAs switches are being tested for many different pulsed power applications that require long lifetime (longevity). The switches have p and n contact metallization (with intentional or unintentional dopants) configured in such a way as to produce p-i-n or n-i-n switches. The longevity of the switches is determined by circuit parameters and by the ability of the contacts to resist erosion. This paper will describe how the switches performed in test-beds designed to measure switch longevity. The best longevity was achieved with switches made with diffused contacts, achieving over 50 million pulses at 10 A and over 2 million pulses at 80 A.

  4. Longevity improvement of optically activated, high gain GaAs photoconductive semiconductor switches

    SciTech Connect

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.

    2000-03-02

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses at 23A, and over 100 pulses at 1kA. This is achieved by improving the ohmic contacts by doping the semi-insulating GaAs underneath the metal, and by achieving a more uniform distribution of contact wear across the entire switch by distributing the trigger light to form multiple filaments. This paper will compare various approaches to doping the contacts, including ion implantation, thermal diffusion, and epitaxial growth. The device characterization also includes examination of the filament behavior using open-shutter, infra-red imaging during high gain switching. These techniques provide information on the filament carrier densities as well as the influence that the different contact structures and trigger light distributions have on the distribution of the current in the devices. This information is guiding the continuing refinement of contact structures and geometries for further improvements in switch longevity.

  5. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.; THORNTON,R.L.; DONALDSON,R.D.

    1999-12-17

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approx}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  6. Longevity of optically activated, high gain GaAs photoconductive semiconductor switches

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; Mar, A.

    1997-08-01

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to well over 10 million pulses by reducing the density of carriers at the semiconductor to metal interface. This was achieved by reducing the density in the vertical and lateral directions. The first was achieved by varying the spatial distribution of the trigger light thereby widening the current filaments that are characteristic of the high gain switches. The authors reduced the carrier density in the vertical direction by using ion implantation. These results were obtained for currents of about 10 A, current duration of 3.5 ns, and switched voltage of {approximately}2 kV. At currents of {approximately}70 A, the switches last for 0.6 million pulses. In order to improve the performance at high currents new processes such as deep diffusion and epitaxial growth of contacts are being pursued. To guide this effort the authors measured a carrier density of 6 x 10{sup 18} electrons (or holes)/cm{sup 3} in filaments that carry a current of 5 A.

  7. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect

    Baca, A.G.; Brown, D.J.; Donaldson, R.D.; Helgeson, W.D.; Hjalmarson, H.P.; Loubriel, G.M.; Mar, A.; O'Malley, M.W.; Thornton, R.L.; Zutavern, F.J.

    1999-08-05

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 50 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer beneath the PCSS contacts which is very effective in the suppression of filament formation and alleviating current crowding to improve the longevity of PCSS. Virtually indefinite, damage-free operation is now possible at much higher current levels than before. The inherent damage-free current capacity of the switch depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approximately}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  8. Rectification and Photoconduction Mapping of Axial Metal-Semiconductor Interfaces Embedded in GaAs Nanowires

    NASA Astrophysics Data System (ADS)

    Orrù, Marta; Piazza, Vincenzo; Rubini, Silvia; Roddaro, Stefano

    2015-10-01

    Semiconductor nanowires have emerged as an important enabling technology and are today used in many advanced device architectures, with an impact both for what concerns fundamental science and in view of future applications. One of the key challenges in the development of nanowire-based devices is the fabrication of reliable nanoscale contacts. Recent developments in the creation of metal-semiconductor junctions by thermal annealing of metallic electrodes offer promising perspectives. Here, we analyze the optoelectronic properties of nano-Schottky barriers obtained thanks to the controlled formation of metallic AuGa regions in GaAs nanowire. The junctions display a rectifying behavior and their transport characteristics are analyzed to extract the average ideality factor and barrier height in the current architecture. The presence, location, and properties of the Schottky junctions are cross-correlated with spatially resolved photocurrent measurements. Broadband light emission is reported in the reverse breakdown regime; this observation, combined with the absence of electroluminescence at forward bias, is consistent with the device unipolar nature.

  9. Accurate measurement of the jitter time of GaAs photoconductive semiconductor switches triggered by a one-to-two optical fiber

    SciTech Connect

    Shi, Wei; Zhang, Lin; Gui, Huaimeng; Hou, Lei; Xu, Ming; Qu, Guanghui

    2013-04-15

    An improved method is proposed to measure the jitter time of the photoconductive semiconductor switches (PCSSs). A one-to-two fiber is utilized to separate and guide the 1053 nm laser beam to trigger two identical 3-mm-gap GaAs PCSSs synchronously. The jitter time is derived from the time lags of two switches turn-on by the error transfer theory. At a bias voltage of 1 kV, the jitter time is measured as 14.41 ps, which is the lowest jitter of GaAs PCSS that has been reported so far.

  10. Simulation of Current Filaments in Photoconductive Semiconductor Switches

    NASA Astrophysics Data System (ADS)

    Kambour, K.; Myles, Charles W.

    2005-03-01

    Optically-triggered, high-power photoconductive semiconductor switches (PCSS's) using semi-insulating GaAs are under development at Sandia. These switches carry current in high carrier-density filaments. The properties of these filaments can be explained by collective impact ionization theory in which energy redistribution by carrier-carrier scattering within the filament enhances the impact ionization. This allows these filaments to be sustained by fields which are relatively low compared to the bulk breakdown fields. For GaAs, the sustaining field is approximately 4.5 kV/cm. For this talk, a hydrodynamic implementation of the collective impact ionization theory is used to compute the properties of these filaments. These continuum calculations are based on previous calculations in which the steady-state properties of filaments are computed using a Monte Carlo method to solve the Boltzmann equation. The effects of defects will also be considered in the presentation of the results.

  11. Characteristics of current filamentation in high gain photoconductive semiconductor switching

    SciTech Connect

    Zutavern, F J; Loubriel, G M; O'Malley, M W; Helgeson, W D; McLaughlin, D L; Denison, G J

    1992-01-01

    Characteristics of current filamentation are reported for high gain photoconductive semiconductor switches (PCSS). Infrared photoluminescence is used to monitor carrier recombination radiation during fast initiation of high gain switching in large (1.5 cm gap) lateral GaAs PCSS. Spatial modulation of the optical trigger, a 200--300 ps pulse width laser, is examined. Effects on the location and number of current filaments, rise time, and delay to high gain switching, minimum trigger energy, and degradation of switch contacts are presented. Implications of these measurements for the theoretical understanding and practical development of these switches are discussed. Efforts to increase current density and reduce switch size and optical trigger energy requirements are described. Results from contact development and device lifetime testing are presented and the impact of these results on practical device applications is discussed.

  12. A photoconductive model for superior GaAs THz photomixers

    NASA Astrophysics Data System (ADS)

    Brown, E. R.

    1999-08-01

    Theoretical methods are used to evaluate the THz output from photomixer structures consisting of interdigitated electrodes and planar antennas on top of a low-temperature-grown GaAs layer. Consistent with experiment, the THz power from a standard photomixer is found to be limited by low external quantum efficiency (˜1%). This arises primarily from low photoconductive gain, which is attributed to a long transit time (between electrodes) for the majority of photocarriers generated in the structure. The modeling is then applied to an improved structure containing a thinner absorbing layer (≈0.34 μm for λ=0.85 μm pump) with a dielectric mirror below it to induce resonant-cavity absorption near the surface where the gain is higher. Through increased gain and absorptivity, the model predicts ≈7× greater THz output for the same optical pump power.

  13. Subnanosecond, high voltage photoconductive switching in GaAs

    SciTech Connect

    Druce, R.L.; Pocha, M.D.; Griffin, K.L. ); O'Bannon, B.J. )

    1990-01-01

    We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

  14. High current density contacts for photoconductive semiconductor switches

    SciTech Connect

    Baca, A.G.; Hjalmarson, H.P.; Loubriel, G.M.; McLaughlin, D.L.; Zutavern, F.J.

    1993-08-01

    The current densities implied by current filaments in GaAs photoconductive semiconductor switches (PCSS) are in excess of 1 MA/cm{sup 2}. As the lateral switches are tested repeatedly, damage accumulates at the contacts until electrical breakdown occurs across the surface of the insulating region. In order to improve the switch lifetime, the incorporation of n- and p-type ohmic contacts in lateral switches as well as surface geometry modifications have been investigated. By using p-type AuBe ohmic contacts at the anode and n-type AuGe ohmic contacts at the cathode, contact lifetime improvements of 5--10x were observed compared to switches with n-type contacts at both anode and cathode. Failure analysis on samples operated for 1--1,000 shots show that extensive damage still exists for at least one contact on all switches observed and that temperatures approaching 500{degrees}C are can be reached. However, the n-type AuGe cathode is often found to have no damage observable by scanning electron microscopy (SEM). The observed patterns of contact degradation indicate directions for future contact improvements in lateral switches.

  15. Electrical Breakdown Physics in Photoconductive Semiconductor Switches (PCSS).

    SciTech Connect

    Mar, Alan; Zutavern, Fred J.; Vawter, Gregory A.; Hjalmarson, Harold P.; Gallegos, Richard Joseph; Bigman, Verle Howard

    2016-01-01

    Advanced switching devices with long lifetime will be critical components for Linear Transformer Drivers (LTDs) in next-generation accelerators. LTD designs employ high switch counts. With current gas switch technology at %7E10e3 shot life, a potential game-changer would be the development of a reliable low-impedance (%3C35nh) optically-triggered compact solid-state switch capable of switching 200kV and 50kA with 10e5 shotlife or better. Other applications of this technology, are pulse shaping programmable systems for dynamic material studies (Z-next, Genesis), efficient pulsed power systems for biofuel feedstock, short pulse (10 ns) accelerator designs for the Defense Threat Reduction Agency (DTRA), and sprytron replacements in NW firing sets. This LDRD project has succeeded in developing new optically-triggered photoconductive semiconductor switch (PCSS) designs that show great promise for scaling to modules capable of 200kV (DC) and 5kA current that can be stacked in parallel to achieve 100's of kA with 10e5 shot lifetime. . Executive Summary Advanced switching devices with long lifetime will be critical components for Linear Transformer Drivers (LTDs) in next-generation accelerators. LTD designs employ high switch counts. With current gas switch technology at %7E10e3 shot life, a potential game-changer would be the development of a reliable low-impedance (%3C35nh) optically-triggered compact solid-state switch capable of switching 200kV and 50kA with 10e5 shotlife or better. Other applications of this technology, are pulse shaping programmable systems for dynamic material studies (Z-next, Genesis), efficient pulsed power systems for biofuel feedstock, short pulse (10 ns) accelerator designs for the Defense Threat Reduction Agency (DTRA), and sprytron replacements in NW firing sets. This LDRD project has succeeded in developing new optically-triggered photoconductive semiconductor switch (PCSS) designs that show great promise for scaling to modules capable

  16. Electrical Breakdown and Lock-On in Photoconductive Semiconductor Switch (PCSS) Devices

    NASA Astrophysics Data System (ADS)

    Hjalmarson, Harold; Kambour, Kenneth; Zutavern, Fred; Myles, Charley

    2008-03-01

    Optically-triggered, high-power photoconductive semiconductor switches (PCSS's) using semi-insulating GaAs are being developed at Sandia Labs. These switches carry current in high carrier-density filaments. The properties of these filaments can be explained by redistribution of carrier energy caused by carrier-carrier scattering within the filament. This process enhances the impact ionization rate thus allowing these filaments to be sustained by relatively low fields, a process called lock-on. For GaAs, the sustaining field is approximately 4.5 kV/cm. For this talk, the physics mechanisms for lock-on and high-field electrical breakdown are described. Also, a continuum implementation of these physics mechanisms is used to compute the properties of these filaments. These continuum calculations are based on previous calculations in which the filament properties are computed using a Monte Carlo method to solve the steady-state Boltzmann equation.

  17. The temporal dynamics of impurity photoconductivity in quantum wells in GaAs

    SciTech Connect

    Aleshkin, V. Ya. E-mail: aleshkin@ipm.sci-nnov.ru

    2015-10-15

    A theory of cascade capture at charged donors in quantum wells (QWs) is developed without using the Fokker-Planck approximation, which is not valid in QWs. The time dependences of impurity photoconductivity and photoelectron concentration in GaAs QWs are determined. The cascade capture time as a function of the charge donor concentration is calculated.

  18. Photoconductive terahertz generation from textured semiconductor materials

    NASA Astrophysics Data System (ADS)

    Collier, Christopher M.; Stirling, Trevor J.; Hristovski, Ilija R.; Krupa, Jeffrey D. A.; Holzman, Jonathan F.

    2016-03-01

    Photoconductive (PC) terahertz (THz) emitters are often limited by ohmic loss and Joule heating—as these effects can lead to thermal runaway and premature device breakdown. To address this, the proposed work introduces PC THz emitters based on textured InP materials. The enhanced surface recombination and decreased charge-carrier lifetimes of the textured InP materials reduce residual photocurrents, following the picosecond THz waveform generation, and this diminishes Joule heating in the emitters. A non-textured InP material is used as a baseline for studies of fine- and coarse-textured InP materials. Ultrafast pump-probe and THz setups are used to measure the charge-carrier lifetimes and THz response/photocurrent consumption of the respective materials and emitters. It is found that similar temporal and spectral characteristics can be achieved with the THz emitters, but the level of photocurrent consumption (yielding Joule heating) is greatly reduced in the textured materials.

  19. Breakover mechanism of GaAs photoconductive switch triggering spark gap for high power applications

    NASA Astrophysics Data System (ADS)

    Tian, Liqiang; Shi, Wei; Feng, Qingqing

    2011-11-01

    A spark gap (SG) triggered by a semi-insulating GaAs photoconductive semiconductor switch (PCSS) is presented. Currents as high as 5.6 kA have been generated using the combined switch, which is excited by a laser pulse with energy of 1.8 mJ and under a bias of 4 kV. Based on the transferred-electron effect and gas streamer theory, the breakover characteristics of the combined switch are analyzed. The photoexcited carrier density in the PCSS is calculated. The calculation and analysis indicate that the PCSS breakover is caused by nucleation of the photoactivated avalanching charge domain. It is shown that the high output current is generated by the discharge of a high-energy gas streamer induced by the strong local electric field distortion or by overvoltage of the SG resulting from quenching of the avalanching domain, and periodic oscillation of the current is caused by interaction between the gas streamer and the charge domain. The cycle of the current oscillation is determined by the rise time of the triggering electric pulse generated by the PCSS, the pulse transmission time between the PCSS and the SG, and the streamer transit time in the SG.

  20. Linearity of photoconductive GaAs detectors to pulsed electrons

    SciTech Connect

    Ziegler, L.H.

    1995-12-31

    The response of neutron damaged GaAs photoconductor detectors to intense, fast (50 psec fwhm) pulses of 16 MeV electrons has been measured. Detectors made from neutron damaged GaAs are known to have reduced gain, but significantly improved bandwidth. An empirical relationship between the observed signal and the incident electron fluence has been determined.

  1. Photoconductive terahertz generation from textured semiconductor materials

    PubMed Central

    Collier, Christopher M.; Stirling, Trevor J.; Hristovski, Ilija R.; Krupa, Jeffrey D. A.; Holzman, Jonathan F.

    2016-01-01

    Photoconductive (PC) terahertz (THz) emitters are often limited by ohmic loss and Joule heating—as these effects can lead to thermal runaway and premature device breakdown. To address this, the proposed work introduces PC THz emitters based on textured InP materials. The enhanced surface recombination and decreased charge-carrier lifetimes of the textured InP materials reduce residual photocurrents, following the picosecond THz waveform generation, and this diminishes Joule heating in the emitters. A non-textured InP material is used as a baseline for studies of fine- and coarse-textured InP materials. Ultrafast pump-probe and THz setups are used to measure the charge-carrier lifetimes and THz response/photocurrent consumption of the respective materials and emitters. It is found that similar temporal and spectral characteristics can be achieved with the THz emitters, but the level of photocurrent consumption (yielding Joule heating) is greatly reduced in the textured materials. PMID:26979292

  2. Tests on photoconductive semiconductor switches for subnanosecond risetime, multimegavolt pulser applications

    NASA Astrophysics Data System (ADS)

    Carboni, V. B.; Smith, I. D.; Pixton, R. M.; Abdalla, M. D.; Zutavern, F. J.; Loubriel, G. M.; Omalley, M. W.

    Experiments were performed to determine the applicability of photoconductive semiconductor switches (PCSS) for use as output switches in subnanosecond pulse for electromagnetic pulse (EMP) simulators. Lateral switches made of Gallium Arsenide and Silicon with 1.5 cm long insulating regions immersed in Fluorinert were tested in a 50 ohm tri-plate transmission line geometry. Mode locked and Q-switched lasers were used to trigger both a gas switched Marx generator which pulse-charged the transmission line in 100 to 150 ns and to illuminate the PCSS via an optical delay line. Illuminating beam energies and electric field strengths at switchout were varied to determine minimum risetimes and light energies required for triggering. The GaAs switches were operated in the high gain (lock-on) mode. Risetimes as fast as 600 ps were observed using a mode locked laser and 700 ps using a Q-switched laser. The minimum light energy required to trigger GaAs was 22 (mu)J and the highest switched fields for both GaAs and Si is about 60 kV/cm.

  3. Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs.

    PubMed

    Tani, M; Matsuura, S; Sakai, K; Nakashima, S

    1997-10-20

    Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling technique. The total radiation power was also measured by a bolometer for comparison of the relative radiation power. The radiation spectra of the LT-GaAs-based and SI-GaAs-based photoconductive antennas of the same design showed no significant difference. The pump-power dependencies of the radiation power showed saturation for higher pump intensities, which was more serious in SI-GaAs-based antennas than in LT-GaAs-based antennas. We attributed the origin of the saturation to the field screening of the photocarriers. PMID:18264312

  4. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    NASA Astrophysics Data System (ADS)

    Xiangrong, Ma; Wei, Shi; Weili, Ji; Hong, Xue

    2011-12-01

    A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.

  5. High gain photoconductive semiconductor switch having tailored doping profile zones

    SciTech Connect

    Baca, Albert G.; Loubriel, Guillermo M.; Mar, Alan; Zutavern, Fred J; Hjalmarson, Harold P.; Allerman, Andrew A.; Zipperian, Thomas E.; O'Malley, Martin W.; Helgeson, Wesley D.; Denison, Gary J.; Brown, Darwin J.; Sullivan, Charles T.; Hou, Hong Q.

    2001-01-01

    A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

  6. Photoconductive semiconductor switches: Laser Q-switch trigger and switch-trigger laser integration

    SciTech Connect

    Loubriel, G.M.; Mar, A.; Hamil, R.A.; Zutavern, F.J.; Helgeson, W.D.

    1997-12-01

    This report provides a summary of the Pulser In a Chip 9000-Discretionary LDRD. The program began in January of 1997 and concluded in September of 1997. The over-arching goal of this LDRD is to study whether laser diode triggered photoconductive semiconductor switches (PCSS) can be used to activate electro-optic devices such as Q-switches and Pockels cells and to study possible laser diode/switch integration. The PCSS switches we used were high gain GaAs switches because they can be triggered with small amounts of laser light. The specific goals of the LDRD were to demonstrate: (1) that small laser diode arrays that are potential candidates for laser-switch integration will indeed trigger the PCSS switch, and (2) that high gain GaAs switches can be used to trigger optical Q-switches in lasers such as the lasers to be used in the X-1 Advanced Radiation Source and the laser used for direct optical initiation (DOI) of explosives. The technology developed with this LDRD is now the prime candidate for triggering the Q switch in the multiple lasers in the laser trigger system of the X-1 Advanced Radiation Source and may be utilized in other accelerators. As part of the LDRD we developed a commercial supplier. To study laser/switch integration we tested triggering the high gain GaAs switches with: edge emitting laser diodes, vertical cavity surface emitting lasers (VCSELs), and transverse junction stripe (TJS) lasers. The first two types of lasers (edge emitting and VCSELs) did activate the PCSS but are harder to integrate with the PCSS for a compact package. The US lasers, while easier to integrate with the switch, did not trigger the PCSS at the US laser power levels we used. The PCSS was used to activate the Q-switch of the compact laser to be used in the X-1 Advanced Radiation Source.

  7. Photoconductive Semiconductor Switch Technology for Short Pulse Electromagnetics and Lasers

    SciTech Connect

    Denison, Gary J.; Helgeson, Wesley D.; Hjalmarson, Harold P.; Loubriel, Guillermo M.; Mar, Alan; O'Malley, Martin W.; Zutavern, Fred J.

    1999-08-05

    High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electromagnetic pulses foc (1) compact, repetitive accelerators, (2) ultra-wide band impulse sources, (3) precision gas switch triggers, (4) optically-activated firesets, and (5) high power optical pulse generation and control. High power, sub-nanosecond optical pulses are used for active optical sensors such as compact optical radars and range-gated hallistic imaging systems. Following a brief introduction to high gain PCSS and its general applications, this paper will focus on PCSS for optical pulse generation and control. PCSS technology can be employed in three distinct approaches to optical pulse generation and control: (1) short pulse carrier injection to induce gain-switching in semiconductor lasers, (2) electro-optical Q-switching, and (3) optically activated Q-switching. The most significant PCSS issues for these applications are switch rise time, jitter, and longevity. This paper will describe both the requirements of these applications and the most recent results from PCSS technology. Experiments to understand and expand the limitations of high gain PCSS will also be described.

  8. Research on synchronization of 15 parallel high gain photoconductive semiconductor switches triggered by high power pulse laser diodes

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Xia, Liansheng; Chen, Yi; Liu, Yi; Yang, Chao; Ye, Mao; Deng, Jianjun

    2015-01-01

    The synchronization of 15 parallel high gain gallium arsenide photoconductive semiconductor switches (GaAs PCSS) has been researched aiming to get higher output voltage. Each PCSS is triggered independently by a high power pulse laser diode. The pulse width, energy, peak power, and central wavelength of the laser pulse are approximately 18 ns, 360 μJ, 20 kW, and 905 nm, respectively. In the stacked Blumlein transmission lines structure, the synchronous conduction of 15 parallel GaAs PCSSs has been achieved by offering optimized bias voltage and laser parameters. The method of synchronization calculation is given, and the synchronization of the 15 parallel GaAs PCSSs is measured as 775 ps. Furthermore, influences of the bias voltage, laser parameters on the synchronization are analyzed. In the output terminal, superimposed by the output voltages of 15 Blumlein transmission lines, the total output voltage reaches up to 328 kV, which is the highest output voltage of GaAs PCSSs that has been reported so far.

  9. Influence of EL2 deep level on photoconduction of semi-insulating GaAs under ultrashort pulse photoinjection

    NASA Astrophysics Data System (ADS)

    Shi, Wei; Xie, Guangyong

    2016-02-01

    To investigate the influence of EL2 deep level on photoconduction of in semi-insulating GaAs (SI-GaAs), a 3 mm-electrode-gap lateral SI-GaAs photoconductive chip was manufactured and tested by using ultrashort pulse laser with 1064 nm wavelength, 10 ns pulsewidth, 3.0 mm light spot diameter and single pulse energy mean of 3.0 mJ. Based on the experimental results and the theory of trapping effect, the photon absorption process of EL2 defects in SI-GaAs is analyzed. For the influence of EL2 deep level, the lifetime of the electron gets shorter and the persistent photoconductivity (PPC) is significant. With increasing of voltage, the decay time constant of photoconduction is reduced and the decay index gets bigger for the ultrashort pulse photoinjection.

  10. Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.

    PubMed

    Boland, Jessica L; Casadei, Alberto; Tütüncüoglu, Gözde; Matteini, Federico; Davies, Christopher L; Jabeen, Fauzia; Joyce, Hannah J; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B

    2016-04-26

    Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18) cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13 ns in undoped nanowires to 3.8 and 2.5 ns in n-doped and p-doped nanowires, respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices, such as solar cells and nanowire lasers. PMID:26959350

  11. Steady-state photoconductivity and multi-particle interactions in high-mobility organic semiconductors

    PubMed Central

    Irkhin, P.; Najafov, H.; Podzorov, V.

    2015-01-01

    Fundamental understanding of photocarrier generation, transport and recombination under a steady-state photoexcitation has been an important goal of organic electronics and photonics, since these processes govern such electronic properties of organic semiconductors as, for instance, photoconductivity. Here, we discovered that photoconductivity of a highly ordered organic semiconductor rubrene exhibits several distinct regimes, in which photocurrent as a function of cw (continuous wave) excitation intensity is described by a power law with exponents sequentially taking values 1, 1/3 and ¼. We show that in pristine crystals this photocurrent is generated at the very surface of the crystals, while the bulk photocurrent is drastically smaller and follows a different sequence of exponents, 1 and ½. We describe a simple experimental procedure, based on an application of “gauge effect” in high vacuum, that allows to disentangle the surface and bulk contributions to photoconductivity. A model based on singlet exciton fission, triplet fusion and triplet-charge quenching that can describe these non-trivial effects in photoconductivity of highly ordered organic semiconductors is proposed. Observation of these effects in photoconductivity and modeling of the underlying microscopic mechanisms described in this work represent a significant step forward in our understanding of electronic properties of organic semiconductors. PMID:26478121

  12. Steady-state photoconductivity and multi-particle interactions in high-mobility organic semiconductors

    NASA Astrophysics Data System (ADS)

    Irkhin, P.; Najafov, H.; Podzorov, V.

    2015-10-01

    Fundamental understanding of photocarrier generation, transport and recombination under a steady-state photoexcitation has been an important goal of organic electronics and photonics, since these processes govern such electronic properties of organic semiconductors as, for instance, photoconductivity. Here, we discovered that photoconductivity of a highly ordered organic semiconductor rubrene exhibits several distinct regimes, in which photocurrent as a function of cw (continuous wave) excitation intensity is described by a power law with exponents sequentially taking values 1, 1/3 and ¼. We show that in pristine crystals this photocurrent is generated at the very surface of the crystals, while the bulk photocurrent is drastically smaller and follows a different sequence of exponents, 1 and ½. We describe a simple experimental procedure, based on an application of “gauge effect” in high vacuum, that allows to disentangle the surface and bulk contributions to photoconductivity. A model based on singlet exciton fission, triplet fusion and triplet-charge quenching that can describe these non-trivial effects in photoconductivity of highly ordered organic semiconductors is proposed. Observation of these effects in photoconductivity and modeling of the underlying microscopic mechanisms described in this work represent a significant step forward in our understanding of electronic properties of organic semiconductors.

  13. Steady-state photoconductivity and multi-particle interactions in high-mobility organic semiconductors.

    PubMed

    Irkhin, P; Najafov, H; Podzorov, V

    2015-01-01

    Fundamental understanding of photocarrier generation, transport and recombination under a steady-state photoexcitation has been an important goal of organic electronics and photonics, since these processes govern such electronic properties of organic semiconductors as, for instance, photoconductivity. Here, we discovered that photoconductivity of a highly ordered organic semiconductor rubrene exhibits several distinct regimes, in which photocurrent as a function of cw (continuous wave) excitation intensity is described by a power law with exponents sequentially taking values 1, 1/3 and ¼. We show that in pristine crystals this photocurrent is generated at the very surface of the crystals, while the bulk photocurrent is drastically smaller and follows a different sequence of exponents, 1 and ½. We describe a simple experimental procedure, based on an application of "gauge effect" in high vacuum, that allows to disentangle the surface and bulk contributions to photoconductivity. A model based on singlet exciton fission, triplet fusion and triplet-charge quenching that can describe these non-trivial effects in photoconductivity of highly ordered organic semiconductors is proposed. Observation of these effects in photoconductivity and modeling of the underlying microscopic mechanisms described in this work represent a significant step forward in our understanding of electronic properties of organic semiconductors. PMID:26478121

  14. Quantitative comparison of terahertz emission from (100) InAs surfaces and a GaAs large-aperture photoconductive switch at high fluences.

    PubMed

    Reid, Matthew; Fedosejevs, Robert

    2005-01-01

    InAs has previously been reported to be an efficient emitter of terahertz radiation at low excitation fluences by use of femtosecond laser pulses. The scaling and saturation of terahertz emission from a (100) InAs surface as a function of excitation fluence is measured and quantitatively compared with the emission from a GaAs large-aperture photoconductive switch. We find that, although the instantaneous peak radiated terahertz field from (100) InAs exceeds the peak radiated signals from a GaAs large-aperture photoconductive switch biased at 1.6 kV/cm, the pulse duration is shorter. For the InAs source the total energy radiated is less than can be obtained from a GaAs large-aperture photoconductive switch. PMID:15662896

  15. Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Chen, R. S.; Wang, W. C.; Lu, M. L.; Chen, Y. F.; Lin, H. C.; Chen, K. H.; Chen, L. C.

    2013-07-01

    The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed.The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr01635h

  16. Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties

    NASA Astrophysics Data System (ADS)

    Chen, R. S.; Wang, W. C.; Chan, C. H.; Lu, M. L.; Chen, Y. F.; Lin, H. C.; Chen, K. H.; Chen, L. C.

    2013-11-01

    The photoconduction (PC) efficiencies of various single-crystalline metal oxide semiconductor nanowires (NWs) have been investigated and compared based on the materials' inherent properties. The defined PC efficiency (normalized gain) of SnO2 NWs is over one to five orders of magnitude higher than that of its highly efficient counterparts such as ZnO, TiO2, WO3, and GaN. The inherent property of the material allowed the photoconductive gain of an SnO2 single-NW photodetector to easily reach 8 × 108 at a low bias of 3.0 V and a low light intensity of 0.05 Wm-2, which is the optimal reported value so far for the single-NW photodetectors. The probable physical origins, such as charged surface state density and surface band bending, that caused the differences in PC efficiencies and carrier lifetimes are also discussed.

  17. Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires.

    PubMed

    Chen, R S; Wang, W C; Lu, M L; Chen, Y F; Lin, H C; Chen, K H; Chen, L C

    2013-08-01

    The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed. PMID:23779084

  18. Material effects in photoconductive frozen wave generators

    NASA Astrophysics Data System (ADS)

    Oconnell, Robert M.; Thaxter, J. B.; Bell, Richard E.

    1991-04-01

    Linear photoconductive gallium arsenide (GaAs) fast closing switches for microwave applications, such as frozen wave pulse generation, are analyzed and compared to experimental measurements. Material effects in photo-conductive frozen wave generators fabricated in semiconductor-based microstrip transmission line are studied from three perspectives; frozen wave propagation in the line; the spacing between the switches in a frozen wave generator and their maximum number; and the switching behavior of the gap-switch itself, which is modeled as a lumped-element, modified Ebers-Moll equivalent circuit. The experimental transient behavior of hybrid gap-switches fabricated on semi-insulating GaAs with ohmic and non-ohmic contacts is compared with predicted performance. Picosecond laser pulses, doubled to 527 micron wavelength are used to excite linear photoconductivity in 75 micron gap switches mounted in a test fixture of 50 ohm microstrip lines on alumina.

  19. Assembly of Submicron Ferromagnets in GaAs Semiconductors*

    NASA Astrophysics Data System (ADS)

    Shi, Jing

    1996-03-01

    Spin-dependent electronic phenomena discovered in nanoscale metallic systems have raised interesting scientific questions regarding spin interactions and are currently finding technological applications. In particular, incorporating microscopic magnets within semiconducting compounds offers the exciting possibility of combining local magnetism with the flexibility of semiconductor-based quantum electronic structures. This work demonstrates that submicron room-temperature ferromagnets have been successfully formed in GaAs semiconductors through a simple process of ion implantation and subsequent heat treatment (J. Shi et al), Nature 377, 707 (1995); J. Shi et al, J. Appl. Phys. (accepted for publication, 1996).. A combination of transmission electron, atomic force, and magnetic force microscopies have been used in conjunction with magnetization measurements to directly examine the structural and magnetic properties of this new system. After Mn^+-implantation at various doses, rapid thermal annealing crystallizes in situ submicron GaMn ferromagnetic particles ( ~ 200 nm) at the GaAs surface. These GaMn particles are crystalline, some with quasicrystalline-like order. Bulk magnetization measurements show that the GaMn particles are room temperature ferromagnets with a Curie temperature far exceeding room temperature. Both the particle size and coercivity can be varied by controlling the implantation and annealing conditions. High resolution magnetic force microscopy images on single GaMn ferromagnets reveal that unmagnetized samples contain both magnetic single- and multi-domain particles, but after initial magnetization, the single-domain state predominates, with magnetic moments aligned preferentially along the [001] directions of the GaAs substrate. In particular, magnetic force imaging has been performed in a changing magnetic field (up to 8 kOe) to directly study and image magnetization reversal of single-domain particles. *Work done in collaboration with D

  20. Nanoscale Photoconductivity Imaging of Thin-film Semiconductors by Laser-assisted Microwave Impedance Microscopy

    NASA Astrophysics Data System (ADS)

    Chu, Zhaodong; Wu, Di; Ren, Yuan; Yang, Seungcheol; Sun, Liuyang; Li, Xiaoqin; Lai, Keji

    The photo-response of semiconductors is usually studied by detecting the photocurrent across source-drain electrodes under light illumination. By integrating the microwave impedance microscopy (MIM) technique with focused-laser stimulation, we are able to perform the real-space photoconductivity mapping of photo-sensitive materials without the need of patterning contact electrodes. Here, we report the MIM results of various thin-film materials, such as In2Se3 nano-sheets and transition metal dichalcogenides (TMD) flakes, illuminated by laser beams of different wavelengths in the ambient condition. With no or below-gap illumination, the samples were highly resistive, as indicated by the low MIM signals. The MIM contrast emerges under above-gap light and increases as increasing laser intensity, which clearly demonstrates the local imaging of photoconductivity rather than the transport photocurrent. Interestingly, clear domain structures with mesoscopic length scales were seen in the data due to the coexistence of multiple phases in In2Se3. The unique combination of MIM and laser stimulation thus provides a new direction to explore the microscopic origin of various light-driven phenomena in complex systems. We gratefully acknowledge financial support from NSF.

  1. Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films

    SciTech Connect

    Nagpal, Prashant; Klimov, Victor I.

    2011-09-27

    Colloidal semiconductor nanocrystals have attracted significant interest for applications in solution-processable devices such as light-emitting diodes and solar cells. However, a poor understanding of charge transport in nanocrystal assemblies, specifically the relation between electrical conductance in dark and under light illumination, hinders their technological applicability. Here we simultaneously address the issues of 'dark' transport and photoconductivity in films of PbS nanocrystals, by incorporating them into optical field-effect transistors in which the channel conductance is controlled by both gate voltage and incident radiation. Spectrally resolved photoresponses of these devices reveal a weakly conductive mid-gap band that is responsible for charge transport in dark. The mechanism for conductance, however, changes under illumination when it becomes dominated by band-edge quantized states. In this case, the mid-gap band still has an important role as its occupancy (tuned by the gate voltage) controls the dynamics of band-edge charges.

  2. System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors

    SciTech Connect

    Harris, John Richardson; Caporaso, George J; Sampayan, Stephen E

    2013-10-22

    A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

  3. Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films

    PubMed Central

    Nagpal, Prashant; Klimov, Victor I.

    2011-01-01

    Colloidal semiconductor nanocrystals have attracted significant interest for applications in solution-processable devices such as light-emitting diodes and solar cells. However, a poor understanding of charge transport in nanocrystal assemblies, specifically the relation between electrical conductance in dark and under light illumination, hinders their technological applicability. Here we simultaneously address the issues of 'dark' transport and photoconductivity in films of PbS nanocrystals, by incorporating them into optical field-effect transistors in which the channel conductance is controlled by both gate voltage and incident radiation. Spectrally resolved photoresponses of these devices reveal a weakly conductive mid-gap band that is responsible for charge transport in dark. The mechanism for conductance, however, changes under illumination when it becomes dominated by band-edge quantized states. In this case, the mid-gap band still has an important role as its occupancy (tuned by the gate voltage) controls the dynamics of band-edge charges. PMID:21952220

  4. 20 THz broadband generation using semi-insulating GaAs interdigitated photoconductive antennas.

    PubMed

    Hale, P J; Madeo, J; Chin, C; Dhillon, S S; Mangeney, J; Tignon, J; Dani, K M

    2014-10-20

    We demonstrate broadband (20 THz), high electric field, terahertz generation using large area interdigitated antennas fabricated on semi-insulating GaAs. The bandwidth is characterized as a function of incident pulse duration (15-35 fs) and pump energy (2-30 nJ). Broadband spectroscopy of PTFE is shown. Numerical Drude-Lorentz simulations of the generated THz pulses are performed as a function of the excitation pulse duration, showing good agreement with the experimental data. PMID:25401668

  5. Effect of defect saturation on terahertz emission and detection properties of low temperature GaAs photoconductive switches

    NASA Astrophysics Data System (ADS)

    Rihani, Samir; Faulks, Richard; Beere, Harvey; Page, Hideaki; Gregory, Ian; Evans, Michael; Ritchie, David A.; Pepper, Michael

    2009-08-01

    We present a study into the properties of terahertz (THz) emission and detection using low temperature grown GaAs photoconductive switches over a range of ex situ anneal temperatures. Our analysis focuses on the effect of defect saturation, which has been confirmed in many experiments. However its effect on the THz emission and detection has so far not been fully investigated. In this letter, we examine the dependence of the radiated THz pulse width (full width at half maximum) upon optical power, and show that the differences in the characteristics with annealing can be theoretically accounted for when defect saturation is taken into account. Defect saturation was found to substantially increase the trapping time of photoexcited electrons, which in turn can cause THz pulse broadening at high optical powers. This effect was found to increase with anneal temperature due to the decrease in defect density. The radiated peak THz amplitude from emitters increases monotonically with increasing optical power across the range of anneal temperatures investigated. In the detector configuration, however, the detected peak THz amplitude reaches a maximum before starting to decrease with increasing optical power. The latter trend was observed for devices annealed at temperatures higher than 300 °C and is attributed to the onset of defect saturation.

  6. Ultrafast terahertz emission properties in GaAs semiconductor

    NASA Astrophysics Data System (ADS)

    Wang, Aihua; Shi, Yulei; Zhou, Qingli

    2015-08-01

    Ultrafast carrier dynamics in Schottky barriers is an extremely active area of research in recent years. The observation of the generation of terahertz pulses from metal/semiconductor interfaces provides a technique to characterize electronic properties of these materials. However, a detailed analysis of these phenomena has not been performed satisfactorily. In this work, the measurements of optically generated terahertz emission from Au/GaAs interfaces are investigated in detail. We observe that, under high laser power excitation, terahertz signals from bare GaAs wafers and Au/GaAs samples exhibit an opposite polarity. The polarity-flip behaviors in the terahertz beams are also observed in the temperature-dependent measurements and the femtosecond pump-generation studies of the Au/GaAs interfaces. These effects can be fully explained in terms of the dynamics of carrier transfer in the Au/GaAs Schottky barriers, which involves the internal photoelectric emission and the electron tunneling effect, and picosecond time constants are found for these processes.

  7. Plasma Etching of n-Type 4H-SiC for Photoconductive Semiconductor Switch Applications

    NASA Astrophysics Data System (ADS)

    Ekinci, Huseyin; Kuryatkov, Vladimir V.; Mauch, Daniel L.; Dickens, James C.; Nikishin, Sergey A.

    2015-05-01

    Photoconductive semiconductor switches (PCSS) fabricated on high-purity semi-insulating 4H-SiC substrates (000) are capable of switching high currents in compact packages with long device lifetimes. A heavily doped n-type SiC epitaxial layer of appropriate thickness is required to form low-resistance ohmic contacts with these devices. In addition, to enhance the performance of the PCSSs, the SiC surface between the ohmic contacts must be extremely smooth. We report a chlorine-based, inductively coupled plasma reactive ion-etching process yielding n-type SiC epitaxial layers with the required smoothness. The rate of etching and post-etching surface morphology were dependent on plasma conditions. We found that the surface smoothness of epitaxial layers can be improved by including BCl3 in the argon-chlorine mixture. The optimum etching process yielded very smooth surfaces (˜0.3 nm RMS) at a relatively high rate of etching of ˜220 nm/min. This new fabrication approach significantly reduced the on-state resistance of the PCSS device and improved its durability of operation.

  8. Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.

    PubMed

    Tuominen, Marjukka; Yasir, Muhammad; Lång, Jouko; Dahl, Johnny; Kuzmin, Mikhail; Mäkelä, Jaakko; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Schulte, Karina; Punkkinen, Risto; Korpijärvi, Ville-Markus; Polojärvi, Ville; Guina, Mircea

    2015-03-14

    Atomic-scale understanding and processing of the oxidation of III-V compound-semiconductor surfaces are essential for developing materials for various devices (e.g., transistors, solar cells, and light emitting diodes). The oxidation-induced defect-rich phases at the interfaces of oxide/III-V junctions significantly affect the electrical performance of devices. In this study, a method to control the GaAs oxidation and interfacial defect density at the prototypical Al2O3/GaAs junction grown via atomic layer deposition (ALD) is demonstrated. Namely, pre-oxidation of GaAs(100) with an In-induced c(8 × 2) surface reconstruction, leading to a crystalline c(4 × 2)-O interface oxide before ALD of Al2O3, decreases band-gap defect density at the Al2O3/GaAs interface. Concomitantly, X-ray photoelectron spectroscopy (XPS) from these Al2O3/GaAs interfaces shows that the high oxidation state of Ga (Ga2O3 type) decreases, and the corresponding In2O3 type phase forms when employing the c(4 × 2)-O interface layer. Detailed synchrotron-radiation XPS of the counterpart c(4 × 2)-O oxide of InAs(100) has been utilized to elucidate the atomic structure of the useful c(4 × 2)-O interface layer and its oxidation process. The spectral analysis reveals that three different oxygen sites, five oxidation-induced group-III atomic sites with core-level shifts between -0.2 eV and +1.0 eV, and hardly any oxygen-induced changes at the As sites form during the oxidation. These results, discussed within the current atomic model of the c(4 × 2)-O interface, provide insight into the atomic structures of oxide/III-V interfaces and a way to control the semiconductor oxidation. PMID:25686555

  9. Influence of different illumination profiles on the on-state resistances of silicon carbide photoconductive semiconductor switches

    SciTech Connect

    Wang, Langning Xun, Tao; Yang, Hanwu; Liu, Jinliang; Zhang, Yu

    2014-04-15

    Characteristics of a silicon-carbide (SiC) photoconductive switch under different illumination profiles are presented. We triggered a V-doped semi-insulated 6H-SiC switch with lateral geometry using a laser beam of 532-nm wavelength. Photoconductivity tests for different spot profiles and locations show that such switches achieve a minimum on-state resistance when the switching gap is illuminated. The differences between on-state resistances are small for various partial illuminations of the switching gap. Semiconductor modeling is used to simulate the electric field and current profiles for different partial illuminations. The simulation results show poor on-state switch performance when partially illuminated. Based on these results, a more revealing circuit model for the switch matches well with experimental results for partial illuminations.

  10. Enhanced excitonic photoconductivity due to built-in internal electric field in TlGaSe{sub 2} layered semiconductor

    SciTech Connect

    Seyidov, MirHasan Yu. Suleymanov, Rauf A.; Şale, Yasin; Balaban, Ertan

    2014-12-07

    The strong enhancement, by several orders of magnitude, of the excitonic peak within the photoconductivity spectrum of TlGaSe{sub 2} semiconductor was observed. The samples were polarized in external dc electric field, which was applied prior to the measurements. Due to the accumulation of charges near the surface, an internal electric field was formed. Electron-hole pairs that were created after the absorption of light are fallen in and then separated by the built-in electric field, which prevents radiative recombination process.

  11. Experimental study and chemical application of GaAs semiconductor laser treating trigeminal neuralgia

    NASA Astrophysics Data System (ADS)

    Qiu, Ke-Qum; Cao, Shu-Chen; Wang, Hu-Zhong; Wang, Ke-Ning; Xiao, Ton-Ha; Shen, Ke-Wei

    1993-03-01

    GaAs semiconductor laser was used to treat trigeminal neuralgia with an effective rate of 91.1%, and no side effects were found in 67 cases. Changes in and the recovery of the trigeminal nerve cell were studied with light and electromicroscope. Discussed in this article are the time length and quantity of laser treatment with low power. Experimental study and clinical application of the GaAs semiconductor laser have been carried out in our department since 1987. One-hundred-fifteen patients with various diseases in the maxillofacial region (including 67 cases of trigeminal neuralgia) have been treated with satisfactory effects and without any side-effects. The wavelength of the laser is 904 mu, the largest pulse length is 200 mu, and the average power is 2000 HZ.

  12. Nano photoconductive switches for microwave applications

    NASA Astrophysics Data System (ADS)

    Tripon-Canseliet, C.; Faci, S.; Decoster, D.; Pagies, A.; Yoon, S. F.; Pey, K. L.; Chazelas, J.

    2013-01-01

    This paper addresses the interaction between light wave technologies and semiconductors devices at the nanoscale. Research works aiming at the development of emerging 1D and 2D nano materials such as nanodots, nanowires, nanotubes and nanoribbons open the way to overcome the performances bottleneck of conventional microwave photoconductive switches. Such new materials offer new opportunities for the confinement of light/matter interaction and exhibit interesting energy band diagram in an optical wavelength spectrum covering visible to NIR. Strong material interests stays for the generation of very high local density of carriers in contrast with a high dark resistivity, in association with a high carrier mobility. These challenges can be reached today thanks to nanotechnology processes with a high compatibility constraint with submicrometer light coupling solutions and microwave devices and circuits technologies. Modeling and design tools dedicated to photoconductive effect description at nanometer scale, for its implementation in passive and active components must be set up in order to exalt this effect for microwave signal processing functionalities such as switching, generation, amplification and emission over a large frequency bandwidth. This paper will report on latest demonstrations of high performance photoconductive switches for high frequency applications at 0.8μm and 1.5μm based on LT-GaAs, GaAs nanowires and GaInAsSb semiconductor materials.

  13. Highly efficient and electrically robust carbon irradiated semi-insulating GaAs based photoconductive terahertz emitters

    SciTech Connect

    Singh, Abhishek; Pal, Sanjoy; Surdi, Harshad; Prabhu, S. S. Nanal, Vandana; Pillay, R. G.

    2014-02-10

    We demonstrate here an efficient photoconductive THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters (PCEs) by two orders of magnitude. By irradiating the SI-GaAs substrate with Carbon-ions up to 2 μm deep, we have created lot of defects and decreased the lifetime of photo-excited carriers inside the substrate. Depending on the irradiation dose, we find 1 to 2 orders of magnitude decrease in total current flowing in the substrate, resulting in subsequent decrease of heat dissipation in the device. This has resulted in increasing maximum cut-off of the applied voltage across PCE electrodes to operate the device without thermal breakdown from ∼35 V to >150 V for the 25 μm electrode gaps. At optimum operating conditions, carbon irradiated (10{sup 14} ions/cm{sup 2}) PCEs give THz pulses with power about 100 times higher in comparison to the usual PCEs on SI-GaAs and electrical to THz power conversion efficiency has improved by a factor of ∼800.

  14. A bow-tie photoconductive antenna using a low-temperature-grown GaAs thin-film on a silicon substrate for terahertz wave generation and detection

    NASA Astrophysics Data System (ADS)

    Darío Velásquez Ríos, Rubén; Bikorimana, Siméon; Ummy, Muhammad Ali; Dorsinville, Roger; Seo, Sang-Woo

    2015-12-01

    This paper presents heterogeneously integrated bow-tie emitter-detector photoconductive antennas (PCAs) based on low-temperature grown-gallium arsenide (LTG-GaAs) thin-film devices on silicon-dioxide/silicon (SiO2/Si) host substrates for integrated terahertz (THz) systems. The LTG-GaAs thin-film devices are fabricated with standard photolithography and thermal evaporation of metal-contact layers of chromium (Cr), nickel (Ni) and gold (Au). They are etched selectively and separated from their growth GaAs substrate. The LTG-GaAs thin-film devices are then heterogeneously integrated on bow-tie antenna electrodes patterned on the surface of a SiO2/Si host substrate for THz emitters and THz detectors. Cost-effective and selective integration of LTG-GaAs thin-film devices on a Si platform is demonstrated. THz radiation from the fabricated THz PCAs is successfully measured using a pump-probe THz time-domain configuration. The THz temporal duration was measured at full width half maximum of 0.36 ps. Its frequency spectrum exhibits a broadband response with a peak resonant frequency of about 0.31 THz. The demonstration illustrates the feasibility of creating heterogeneously integrated THz systems using separately optimized LTG-GaAs devices and Si based electronics.

  15. Si(C≡C)4-Based Single-Crystalline Semiconductor: Diamond-like Superlight and Superflexible Wide-Bandgap Material for the UV Photoconductive Device.

    PubMed

    Sun, Ming-Jun; Cao, Xinrui; Cao, Zexing

    2016-07-01

    A wide-bandgap SiC4 semiconductor with low density and high elasticity has been designed and characterized by ab initio molecular dynamics simulations and first-principles calculations. The through-space conjugation among the d orbitals of Si and the π* orbitals of ethynyl moieties can remarkably enhance the photoconductivity. This new-type superlight and superflexible semiconductor is predicted to have unique electronic, optical, and mechanical properties, and it is a quite promising material for the high-performance UV optoelectronic devices suitable for various practical demands in a complex environment. PMID:27334253

  16. Photoconductivity of transparent perovskite oxide semiconductors BaSnO3 and SrTiO3 epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Park, Jisung; Kim, Useong; Char, Kookrin; Institute of Applied Physics, Department of Physics; Astronomy, Seoul National University, Seoul Team

    We have measured the photoconductivity (PC) of epitaxial thin films of transparent semiconductor BaSnO3 (BSO) and SrTiO3 (STO) at room temperature. The epitaxial thin films of BSO and STO were grown by pulsed laser ablation technique on the MgO substrates to exclude any conductance from the substrate owing to its large bandgap (~7.8 eV). Despite the same crystalline structure and similar band gap sizes (~3.2 eV), the PC of BSO behaved very differently. The slowly varying component in the PC of BSO is much larger than that of STO; the PC of BSO increased slowly, reached higher magnitude after the same duration of illumination, and persisted longer than many hours after the light was turned off, whereas the PC of STO showed little persistent conductivity. The spectral responses of the PC of BSO and STO showed their highest peaks below 400 nm when measured by a UV monochromator system, suggesting that the electron-hole pair generation is the main mechanism of the PC for both materials. The higher mobility of BSO should be partially responsible for the higher PC. The large persistent PC of BSO seems related to the dislocations that trap electrons easily.

  17. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    NASA Astrophysics Data System (ADS)

    Lin, H. C.; Ye, P. D.; Xuan, Y.; Lu, G.; Facchetti, A.; Marks, T. J.

    2006-10-01

    High-performance GaAs metal-insulator-semiconductor field-effect-transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5to16.5nm exhibit a gate leakage current density <10-5A/cm2 at a gate bias smaller than 3V, a maximum drain current of 370mA/mm at a forward gate bias of 2V, and a maximum intrinsic transconductance of 170mS/mm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

  18. Nonlinear transport of semi-insulating GaAs in a semiconductor gas discharge structure

    NASA Astrophysics Data System (ADS)

    Yücel Kurt, H.; Salamov, B. G.

    2007-12-01

    Nonlinear transport of a semi-insulating (SI) GaAs photodetector in a semiconductor gas discharge structure (SGDS) is studied experimentally for a wide range of gas pressures p, interelectrode distances d and different diameters D of the detector areas. While being driven with a stationary voltage, the system generates current and discharge light emission (DLE) instabilities with different amplitudes of the oscillations. The transformation of the profile and amplitude of the current density of the filaments in the different regions of the current-voltage characteristic (CVC) has been studied. Instabilities of spatially non-uniform distributions resulting in the formation of multiple current filaments with increasing voltages above the critical values have been observed. It is shown that the interelectrode distance only plays a passive role and is not responsible for the appearance of the DLE instability under the experimental conditions. At the same time, the expanded range of current and DLE oscillations are observed for different diameters D of the infrared (IR) photodetector areas. An SGDS with an N-shaped CVC is analysed using both the current and DLE data which show the electrical instability in the GaAs photodetector. It is found that the application of high feeding voltage to this photodetector gives rise to a non-uniform spatial distribution of the DLE, which disturbs the operation of the system. The experiment also presents a new method to study and visualize the electrical instabilities in a high-resistivity IR photodetector of large diameter.

  19. Removal of GaAs growth substrates from II-VI semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Bieker, S.; Hartmann, P. R.; Kießling, T.; Rüth, M.; Schumacher, C.; Gould, C.; Ossau, W.; Molenkamp, L. W.

    2014-04-01

    We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet etching and is generally applicable to any II-VI layer stack. We demonstrate the non-invasiveness of the method by transferring an all-II-VI magnetic resonant tunneling diode. High resolution x-ray diffraction proves that the crystal integrity of the heterostructure is preserved. Transport characterization confirms that the functionality of the device is maintained and even improved, which is ascribed to completely elastic strain relaxation of the tunnel barrier layer.

  20. Technology of GaAs metal-oxide-semiconductor solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M.

    1977-01-01

    The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

  1. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

    NASA Astrophysics Data System (ADS)

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-01

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ˜40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  2. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches.

    PubMed

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-01

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ~40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed. PMID:25273719

  3. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

    SciTech Connect

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-15

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ∼40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  4. Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

    NASA Technical Reports Server (NTRS)

    Kashkarov, P. K.; Kazior, T. E.; Lagowski, J.; Gatos, H. C.

    1983-01-01

    An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

  5. The reverse mode of the photo activated charge domain in high field biased semi-insulating GaAs

    NASA Astrophysics Data System (ADS)

    Qu, Guanghui; Shi, Wei

    2013-02-01

    The nonlinear accumulation of the photogenerated electrons in high field biased SI-GaAs has been defined as photo activated charge domain (PACD). The transient transport dynamics of the PACD is investigated. The result shows that the PACD, working as a reverse gun dipole domain when biased electric field much higher than 4 kV/cm, and the reverse mode of the PACD could dominate the electric field shielding by its main electric field ultrafast and exponential rising against the bias field. Such mechanisms could play an important role in GaAs THz antenna, GaAs photoconductive semiconductor switch, and the other ultrafast GaAs devices.

  6. Metal{endash}insulator{endash}semiconductor structure on GaAs using a pseudomorphic Si/GaP interlayer

    SciTech Connect

    Park, D.; Mohammad, S.N.; Chen, Z.; Morkoc, H.

    1997-03-01

    We report on a novel GaAs metal{endash}insulator{endash}semiconductor (MIS) structure exhibiting the interface state densities in the 9.2{times}10{sup 10} eV{sup {minus}1}cm{sup {minus}2} with a Si (10 {Angstrom})/GaP (12 {Angstrom}) layer on GaAs. The structure was grown by a combination of molecular beam epitaxy and chemical vapor deposition. The hysteresis and frequency dispersion of the MIS capacitor were lower than 100 mV, some of them as low as 70 mV under a field swing of about {plus_minus}1.4 MV/cm. {ital Ex situ} solid phase annealing around 500{endash}550{degree}C in N{sub 2} using rapid thermal annealing was high enough to recrystallize the as-deposited Si interlayer at low temperature ({approximately}300{degree}C). The 100 kHz frequency response at 77 K suggests that the interface pinning levels are close to the conduction band edge of GaAs. This article reports the first application of a pseudomorphic Si/GaP interlayer to ideal GaAs MIS diodes and exhibits a favorable interface stability with high temperature annealing. {copyright} {ital 1997 American Vacuum Society.}

  7. Low-temperature grown GaAs heterojunction metal-semiconductor-metal photodetectors improve speed and efficiency

    NASA Astrophysics Data System (ADS)

    Currie, Marc; Quaranta, Fabio; Cola, Adriano; Gallo, Eric M.; Nabet, Bahram

    2011-11-01

    Low-temperature-grown GaAs (LT-GaAs) has a picosecond recombination lifetime, making a fast photodetector material but limiting carrier mobility and collection efficiency. Here, a metal-semiconductor-metal photodetector with a thin channel of regular-temperature GaAs (RT-GaAs) above LT-GaAs provides fast transit between contacts. A p-type delta doping layer below these layers produces a vertical electric field forcing optically generated electrons towards the channel. The AlGaAs/RT-GaAs heterojunction increases Schottky contacts, and the resulting 8-22 μm pitch photodetectors have low (<1-nA) dark current, 12-ps (oscilloscope-limited) pulsewidth, and 0.15-A/W responsivity. The devices demonstrate that fast LT-GaAs pulses are achievable with responsivity similar to RT-GaAs.

  8. Analysis of aluminum nano-gratings assisted light reflection reduction in GaAs metal-semiconductor-metal photodetectors

    NASA Astrophysics Data System (ADS)

    Fan, Zhenzhu; Su, Yahui; Zhang, Huayong; Han, Xiaohu; Ren, Feifei

    2015-09-01

    Plasmonics-based GaAs metal-semiconductor-metal photodetector (MSM-PD) with aluminum nano-gratings was proposed. A detailed numerical study of subwavelength nanogratings behavior to reduce the light reflection is performed by finite-difference time domain (FDTD) algorithm. The geometric parameters of nano-gratings, such as aperture width, the nano-gratings height, the duty cycles are optimized for subwavelength metal nanogratings on GaAs substrate and their impact on light reflection below the conventional MSM-PD is confirmed. Simulation results show that a light reflection factor around 15% can be obtained near the wavelength of 900 nm with optimized MSM-PDs, and in visible light spectrum, the Al nano-gratings show better performance than Au nano-gratings.

  9. Photoconductive switching for high power microwave generation

    SciTech Connect

    Pocha, M.D.; Hofer, W.W.

    1990-10-01

    Photoconductive switching is a technology that is being increasingly applied to generation of high power microwaves. Two primary semiconductors used for these devices are silicon and gallium arsenide. Diamond is a promising future candidate material. This paper discusses the important material parameters and switching modes, critical issues for microwave generation, and future directions for this high power, photoconductive switching technology.

  10. Magneto-optical properties of semiconductor-based superlattices having GaAs with MnAs nanoclusters

    NASA Astrophysics Data System (ADS)

    Shimizu, H.; Tanaka, M.

    2001-06-01

    We have fabricated semiconductor-based magnetic superlattices (SLs) containing GaAs:MnAs granular material in which MnAs nanoclusters are embedded in GaAs, and have characterized their structural, optical, and magneto-optical properties. SLs consisting of GaAs:MnAs and AlAs are shown to have good crystalline quality and excellent compatibility with nonmagnetic GaAs/AlAs heterostructures. The optical transmission properties were improved in the SLs, while keeping the strong magneto-optical properties of GaAs:MnAs. We used these magnetic SLs in a semiconductor-based magnetic microcavity as the central magnetic layer, and its optical transmission was found to have improved compared with our previous multilayer structures.

  11. Magneto-optical properties of semiconductor-based superlattices having GaAs with MnAs nanoclusters

    SciTech Connect

    Shimizu, H.; Tanaka, M.

    2001-06-01

    We have fabricated semiconductor-based magnetic superlattices (SLs) containing GaAs:MnAs granular material in which MnAs nanoclusters are embedded in GaAs, and have characterized their structural, optical, and magneto-optical properties. SLs consisting of GaAs:MnAs and AlAs are shown to have good crystalline quality and excellent compatibility with nonmagnetic GaAs/AlAs heterostructures. The optical transmission properties were improved in the SLs, while keeping the strong magneto-optical properties of GaAs:MnAs. We used these magnetic SLs in a semiconductor-based magnetic microcavity as the central magnetic layer, and its optical transmission was found to have improved compared with our previous multilayer structures. {copyright} 2001 American Institute of Physics.

  12. First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN Semiconductors

    SciTech Connect

    Schulthess, Thomas C; Temmerman, Walter M; Szotek, Zdzislawa; Svane, Axel; Petit, Leon

    2007-01-01

    We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn-d levels in GaAs. We find good agreement between computed values and estimates from photoemisison experiments.

  13. Photoconductive circuit element reflectometer

    DOEpatents

    Rauscher, C.

    1987-12-07

    A photoconductive reflectometer for characterizing semiconductor devices at millimeter wavelength frequencies where a first photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short first laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test. Second PCEs are connected along the transmission line to sample the signals on the transmission line when excited into conductance by short second laser light pulses, spaced apart in time a determinable period from the first laser light pulses. Electronic filters connected to each of the second PCEs act as low-pass filters and remove parasitic interference from the sampled signals and output the sampled signals in the form of slowed-motion images of the signals on the transmission line. 4 figs.

  14. Photoconductive circuit element reflectometer

    DOEpatents

    Rauscher, Christen

    1990-01-01

    A photoconductive reflectometer for characterizing semiconductor devices at millimeter wavelength frequencies where a first photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short first laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test. Second PCEs are connected along the transmission line to sample the signals on the transmission line when excited into conductance by short second laser light pulses, spaced apart in time a variable period from the first laser light pulses. Electronic filters connected to each of the second PCEs act as low-pass filters and remove parasitic interference from the sampled signals and output the sampled signals in the form of slowed-motion images of the signals on the transmission line.

  15. Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO 2-GaAs metal-oxide-semiconductor devices

    NASA Astrophysics Data System (ADS)

    Kundu, Souvik; Shripathi, T.; Banerji, P.

    2011-12-01

    This work deals with the fabrication of a GaAs metal-oxide-semiconductor device with an unpinned interface environment. An ultrathin ( ˜2 nm) interface passivation layer (IPL) of ZnO on GaAs was grown by metal organic chemical vapor deposition to control the interface trap densities and to prevent the Fermi level pinning before high-k deposition. X-ray photoelectron spectroscopy and high resolution transmission electron microscopy results show that an ultra thin layer of ZnO IPL can effectively suppress the oxides formation and minimize the Fermi level pinning at the interface between the GaAs and ZrO 2. By incorporating ZnO IPL, GaAs MOS devices with improved capacitance-voltage and reduced gate leakage current were achieved. The charge trapping behavior of the ZrO 2/ZnO gate stack under constant voltage stressing exhibits an improved interface quality and high dielectric reliability.

  16. The contact and photoconductivity characteristics between Co doped amorphous carbon and GaAs: n-type low-resistivity and semi-insulated high-resistivity GaAs

    NASA Astrophysics Data System (ADS)

    Zhai, Zhangyin; Yu, Hualing; Zuo, Fen; Guo, Chunlian; Chen, Guibin; Zhang, Fengming; Wu, Xiaoshan; Gao, Ju

    2016-06-01

    The Co doped amorphous carbon films (a-C:Co), deposited by pulsed laser deposition, show p-n and ohmic contact characteristics with n-type low resistivity GaAs (L-GaAs) and semi-insulated high-resistivity GaAs (S-GaAs). The photosensitivity enhances for a-C:Co/L-GaAs, while inverse decreases for a-C:Co/S-GaAs heterojunction, respectively. Furthermore, the enhanced photosensitivity for the a-C:Co/L-GaAs/Ag heterojunction also shows deposition temperature dependence behavior, and the optimum deposition temperature is around 500 °C.

  17. Photoconductivity of Activated Carbon Fibers

    DOE R&D Accomplishments Database

    Kuriyama, K.; Dresselhaus, M. S.

    1990-08-01

    The photoconductivity is measured on a high-surface-area disordered carbon material, namely activated carbon fibers, to investigate their electronic properties. Measurements of decay time, recombination kinetics and temperature dependence of the photoconductivity generally reflect the electronic properties of a material. The material studied in this paper is a highly disordered carbon derived from a phenolic precursor, having a huge specific surface area of 1000--2000m{sup 2}/g. Our preliminary thermopower measurements suggest that this carbon material is a p-type semiconductor with an amorphous-like microstructure. The intrinsic electrical conductivity, on the order of 20S/cm at room temperature, increases with increasing temperature in the range 30--290K. In contrast with the intrinsic conductivity, the photoconductivity in vacuum decreases with increasing temperature. The recombination kinetics changes from a monomolecular process at room temperature to a biomolecular process at low temperatures. The observed decay time of the photoconductivity is {approx equal}0.3sec. The magnitude of the photoconductive signal was reduced by a factor of ten when the sample was exposed to air. The intrinsic carrier density and the activation energy for conduction are estimated to be {approx equal}10{sup 21}/cm{sup 3} and {approx equal}20meV, respectively. The majority of the induced photocarriers and of the intrinsic carriers are trapped, resulting in the long decay time of the photoconductivity and the positive temperature dependence of the conductivity.

  18. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Oe, Kunishige; Okamoto, Hiroshi

    1998-11-01

    A new semiconductor alloy material, GaAs1-xBix has been created by Metal Organic Vapor Phase Epitaxial (MOVPE) growth. A low growth temperature, such as 365°C, is required to obtain the alloy. X-ray diffraction measurements of alloy layers reveal that the diffraction patterns are satisfactory. The maximum GaBi content in the GaAsBi alloy estimated from the lattice constant is around 2%, which is consistent with that estimated from secondary ion mass spectroscopy (SIMS) measurements. In a photoluminescence (PL) measurement, a single peak spectrum is observed from 10 to 300 K. The temperature variation of the PL peak energy is as small as 0.1 meV/K.

  19. Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Han, Jaeheon

    2011-12-01

    Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.

  20. Graded Al sub x Ga sub 1-x as photoconductive devices for high efficiency picosecond optoelectronic switching

    SciTech Connect

    Morse, J.D.; Mariella, R.P. ); Dutton, R.W. . Center for Integrated Systems)

    1990-10-01

    Picosecond photoconductivity has been achieved for a variety of semiconductor materials by techniques which have now become almost standard. Enhanced scattering by the excessive amount of deep level defects which provide for picosecond recombination lifetimes significantly reduce the mobility, degrading the responsivity of the photoconductor. This paper will present a concept where improved responsivity is achievable by utilizing a graded bandgap Al{sub x}Ga{sub 1-x}As active detecting layer grown on a high defect density GaAs layer by molecular beam epitaxy (MBE). 7 refs., 6 figs.

  1. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect

    Sullivan, James S.

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  2. Structural and electronic properties of GaAs and GaP semiconductors

    SciTech Connect

    Rani, Anita; Kumar, Ranjan

    2015-05-15

    The Structural and Electronic properties of Zinc Blende phase of GaAs and GaP compounds are studied using self consistent SIESTA-code, pseudopotentials and Density Functional Theory (DFT) in Local Density Approximation (LDA). The Lattice Constant, Equillibrium Volume, Cohesive Energy per pair, Compressibility and Band Gap are calculated. The band gaps calcultated with DFT using LDA is smaller than the experimental values. The P-V data fitted to third order Birch Murnaghan equation of state provide the Bulk Modulus and its pressure derivatives. Our Structural and Electronic properties estimations are in agreement with available experimental and theoretical data.

  3. Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs1–xNx alloys: The appearance of a mobility edge

    DOE PAGESBeta

    Alberi, K.; Fluegel, B.; Beaton, D. A.; Ptak, A. J.; Mascarenhas, A.

    2012-07-09

    Electrons in semiconductor alloys have generally been described in terms of Bloch states that evolve from constructive interference of electron waves scattering from perfectly periodic potentials, despite the loss of structural periodicity that occurs on alloying. Using the semiconductor alloy GaAs₁₋xNx as a prototype, we demonstrate a localized to delocalized transition of the electronic states at a percolation threshold, the emergence of a mobility edge, and the onset of an abrupt perturbation to the host GaAs electronic structure, shedding light on the evolution of electronic structure in these abnormal alloys.

  4. Photoconductive circuit element pulse generator

    DOEpatents

    Rauscher, Christen

    1989-01-01

    A pulse generator for characterizing semiconductor devices at millimeter wavelength frequencies where a photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test.

  5. Effect of semiconductor GaAs laser irradiation on pain perception in mice

    SciTech Connect

    Zarkovic, N.; Manev, H.; Pericic, D.; Skala, K.; Jurin, M.; Persin, A.; Kubovic, M.

    1989-01-01

    The influence of subacute exposure (11 exposures within 16 days) of mice to the low power (GaAs) semiconductive laser-stimulated irradiation on pain perception was investigated. The pain perception was determined by the latency of foot-licking or jumping from the surface of a 53 degrees C hot plate. Repeated hot-plate testing resulted in shortening of latencies in both sham- and laser-irradiated mice. Laser treatment (wavelength, 905 nm; frequency, 256 Hz; irradiation time, 50 sec; pulse duration, 100 nsec; distance, 3 cm; peak irradiance, 50 W/cm2 in irradiated area; and total exposure, 0.41 mJ/cm2) induced further shortening of latencies, suggesting its stimulatory influence on pain perception. Administration of morphine (20 mg/kg) prolonged the latency of response to the hot plate in both sham- and laser-irradiated mice. This prolongation tended to be lesser in laser-irradiated animals. Further investigations are required to elucidate the mechanism of the observed effect of laser.

  6. Measurement and Modeling of OPNMR Phenomena in GaAs Semiconductors

    NASA Astrophysics Data System (ADS)

    Wheeler, Dustin D.

    Since its inception, nuclear magnetic resonance (NMR) has been a key technique for sample characterization. One significant limitation of NMR is an inherent lack of sensitivity, making it extremely difficult to probe systems with low spin densities (≤1017 nuclei). Optically pumped NMR (OPNMR) provides one method to get around this sensitivity barrier by utilizing the high electronic polarizations that can be generated through the application of polarized light. Semiconducting materials are the fundamental building blocks of important components in most aspects of modern society, including solar cells, optical detectors, and diodes and transistors in electronic circuits. Because of this prevalence, accurate and comprehensive characterization of a sample is necessary to gauge the ability of the sample to perform the necessary role. Extremely small concentrations of defects in a sample can have substantial effects on the performance of a device, so characterization techniques must have a high degree of sensitivity. OPNMR aims to provide a path to characterize these defects. Recent work in our lab has focused on probing the underlying mechanisms occurring in OPNMR, including the source of nuclear polarization and the nature of the hyperfine coupling that occurs between nuclear spins and nearby electrons. This dissertation examines the theory of optical pumping, polarization transfer, and experimental applications. Also included are observations of perturbations to the nutation and echo behavior of GaAs under optical pumping conditions.

  7. Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs

    NASA Astrophysics Data System (ADS)

    Deng, Hui-Xiong; Li, Jingbo; Li, Shu-Shen; Peng, Haowei; Xia, Jian-Bai; Wang, Lin-Wang; Wei, Su-Huai

    2010-11-01

    For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitution on As sites in GaAs, isovalent defect levels or defect bands are introduced. The evolution of the defect states as a function of the alloy concentration is usually described by the popular phenomenological band anticrossing (BAC) model. Using first-principles band-structure calculations we show that at the impurity limit the N- (Bi)-induced impurity level is above (below) the conduction- (valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs1-xNx becomes an N-derived state and the valence-band edge of GaAs1-xBix becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture.

  8. The friction behavior of semiconductors Si and GaAs in contact with pure metals

    NASA Technical Reports Server (NTRS)

    Mishina, H.

    1984-01-01

    The friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals was studied. Five transition and two nontransition metals, titanium, tantalum, nickel, palladium, platinum, copper, and silver, slid on a single crystal silicon (111) surface. Four metals, indium, nickel, copper and silver, slid on a single crystal gallium arsenide (100) surface. Experiments were conducted in room air and in a vacuum of 10 to the minus 7th power N/sq cm (10 to the minus 9th power torr). The results indicate that the sliding of silicon on the transition metals exhibits relatively higher friction than for the nontransition metals in contact with silicon. There is a clear correlation between friction and Schottky barrier height formed at the metal silicon interface for the transition metals. Transition metals with a higher barrier height on silicon had a lower friction. The same effect of barrier height was found for the friction of gallium arsenide in contact with metals.

  9. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect

    Sullivan, James S.

    2013-07-03

    Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

  10. Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    NASA Astrophysics Data System (ADS)

    Lin, H. C.; Kim, S. K.; Chang, D.; Xuan, Y.; Mohammadi, S.; Ye, P. D.; Lu, G.; Facchetti, A.; Marks, T. J.

    2007-08-01

    Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) with very thin self-assembled organic nanodielectrics (SANDs) are presented. The application of SAND on compound semiconductors offers unique opportunities for high-performance devices. Thus, 1μm gate-length depletion-mode n-channel SAND/GaAs MISFETs exhibit low gate leakage current densities of 10-2-10-5A/cm2, a maximum drain current of 260mA/mm at 2V forward gate bias, and a maximum intrinsic transconductance of 127mS/mm. These devices achieve a current cutoff frequency (fT) of 10.6GHz and a maximum oscillation frequency (fmax) of 6.9GHz. Nearly hysteresis-free Ids-Vgs characteristics and low flicker noise indicate that a high-quality SAND-GaAs interface is achieved.

  11. Analysis of DC Characteristics and Small Signal Equivalent Circuit Parameters of GaAs Metal-Semiconductor Field Effect Transistors with Different Gate Lengths and Different Gate Contours by Two-Dimensional Device Simulations

    NASA Astrophysics Data System (ADS)

    Meng, C. C.; Su, J. Y.; Yang, S. M.

    2005-09-01

    The gate length and gate contour of a GaAs metal-semiconductor field effect transistor (MESFET) device play important roles in determining the small signal circuit parameters and large signal breakdown voltage behavior. GaAs MESFETs with different gate lengths and gate contours were studied by the two-dimensional (2-D) semiconductor device simulations to investigate the dependence of small signal circuit parameters and breakdown voltage on gate length and gate contour. The results show that gate length affects small-signal circuit parameter Cgs while gate contour affects Cgd. The breakdown voltage has strong dependence on gate contour and little dependence on gate length.

  12. Growth and Properties of the Dilute Bismide Semiconductor GaAs1-xBix a Complementary Alloy to the Dilute Nitrides

    SciTech Connect

    Tiedje, T.; Young, E. C.; Mascarenhas, A.

    2008-01-01

    In this review we describe the growth and properties of the dilute bismide semiconductor alloy GaAs{sub 1-x}Bi{sub x} and show how its properties are in certain respects complementary to the dilute nitride alloy, GaN{sub y}As{sub 1-y}. Like the dilute nitrides the dilute bismides show a giant band gap bowing effect in which a small concentration of the alloying element has a disproportionate effect on the band gap, however in the case of the bismide the band gap reduction is associated with an increase in the energy of the valence band maximum (VBM) rather than a reduction in the energy of the conduction band minimum (CBM). Under standard GaAs growth conditions Bi acts as a surfactant with associated improvements in surface quality. In order to incorporate Bi, growth temperatures below 400 C are used with As{sub 2}/Ga flux ratios close to unity. The electron mobility of GaAs is only weakly affected by Bi alloying, in contrast to the dilute nitrides where the electron mobility decreases rapidly with N alloying. Bi alloying also produces a giant bowing effect in the spin orbit splitting in the valence band. Strong room temperature photoluminescence is observed. Prospects for future device applications of this new compound semiconductor alloy are discussed.

  13. Characterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode

    PubMed Central

    Tan, Shih-Wei; Lai, Shih-Wen

    2012-01-01

    Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO2 and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φb) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the current transport for Pd-MSM diodes in the consideration of the carrier over the metal-semiconductor barrier. In addition, in the consideration of the carrier over both the metal-semiconductor barrier and the insulator-semiconductor barrier simultaneously, thus the thermionic-emission process can be used to describe well the current transport for M-MSM diodes. Furthermore, in the higher applied voltage, the carrier recombination will be taken into discussion. Besides, a composite-current (CC) model is developed to evidence the concepts. Our calculated results are in good agreement with the experimental ones. PMID:23226352

  14. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    SciTech Connect

    Islam, Sk Masiul Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  15. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    NASA Astrophysics Data System (ADS)

    Islam, Sk Masiul; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.; Mukherjee, Rabibrata

    2015-06-01

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO2 and ZrO2, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×1011 cm-2, respectively. The device with a structure Metal/ZrO2/InAs QDs/HfO2/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10-6 A/cm2 and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO2 deposition.

  16. Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

    SciTech Connect

    Liu, L. N.; Choi, H. W.; Lai, P. T.; Xu, J. P.

    2015-11-23

    GaAs metal-oxide-semiconductor capacitor with TaYON/LaTaON gate-oxide stack and fluorine-plasma treatment is fabricated and compared with its counterparts without the LaTaON passivation interlayer or the fluorine treatment. Experimental results show that the sample exhibits better characteristics: low interface-state density (8 × 10{sup 11 }cm{sup −2}/eV), small flatband voltage (0.69 V), good capacitance-voltage behavior, small frequency dispersion, and small gate leakage current (6.35 × 10{sup −6} A/cm{sup 2} at V{sub fb} + 1 V). These should be attributed to the suppressed growth of unstable Ga and As oxides on the GaAs surface during gate-oxide annealing by the LaTaON interlayer and fluorine incorporation, and the passivating effects of fluorine atoms on the acceptor-like interface and near-interface traps.

  17. Effect of chemical surface treatments on non-native (Bi/sub 2/O/sub 3/) GaAs metal-insulator-semiconductor solar cells

    SciTech Connect

    Wang, E.Y.; Pandelisev, K.A.

    1981-07-01

    GaAs metal-insulator-semiconductor solar cells with a physically deposited Bi/sub 2/O/sub 3/ interfacial layer have been investigated. The deposition techniques used in the study were electron beam and boat thermal evaporation. The cells fabricated with interfacial layers of Bi/sub 2/O/sub 3/ showed a substantial improvement in open-circuit voltage over cells made without the physically deposited oxide layer. An etch has been used which yields an irregular ''textured'' surface. Cells employing this surface had a higher short-circuit current than those made with smooth, polished surfaces. The open-circuit voltages of these textured cells were lower than those with smooth surfaces. Calculations of the dependence of open-circuit voltage on pinhole density are in agreement with these results since a rough surface has a greater probability of pinholes.

  18. Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas

    SciTech Connect

    Ren, F.; Lee, J.W.; Abernathy, C.R.; Pearton, S.J.; Constantine, C.; Barratt, C.; Shul, R.J.

    1997-07-01

    The effects of Ar plasma exposure on transconductance, channel sheet resistance, output resistance, and gate contact ideality factor of GaAs metal-semiconductor field-effect transistors (MESFETs) were investigated using two different high-density plasma sources, namely inductively coupled plasma and electron resonance plasma. Ion-induced damage is found to be reduced at moderate source powers ({approximately}200W) because of the reduction in cathode dc self-bias and hence ion energy, but at higher source powers the increase in ion flux produces significant deterioration of the device performance. Careful attention must be paid to both ion flux and ion energy in order to minimize ion-induced damage. Due to their relatively low channel doping levels, MESFETs are found to be more sensitive to plasma damage than devices with very heavily doped component layers such as heterojunction bipolar transistors. {copyright} {ital 1997 American Vacuum Society.}

  19. Transient Photoconduction in Phthalocyanines

    NASA Astrophysics Data System (ADS)

    Petty, David Matthew

    1991-02-01

    Available from UMI in association with The British Library. Requires signed TDF. Photoconduction occurs when illumination interacts with a sample to cause a change in the flow of current through that sample. The work described in this thesis is centred on the investigation of the processes which effect photoconduction. These processes include the way in which charge carriers move the electrodes, the way in which charge carriers transit the bulk and the way in which charge carriers are excited and relax. The thesis is divided into three parts. Part I is essentially a literature survey of the theories which describe photoconduction. An overview of photoconduction at a microscopic level in all types of sample is given. By categorising the sample as neutral or supporting a single carrier space charge, the mathematical description of photoconduction behaviour can be simplified. In Part II existing theories which describe photoconduction in charged samples are reviewed. A new theory yields two important equations: (i) the Plasma equation which describes the conditions for a neutral sample and those for a single carrier space charge, (ii) the BUIC (Bulk Uniform Injected Charge) equation which describes the time and field dependence of a photoconductor which supports a single carrier space charge. The BUIC equation is compared with existing theories and its ability to describe photoconduction in sandwich cells of phthalocyanine compounds is discussed. Part III contains an investigation of photoconduction in phthalocyanines. Steady state and chopped light transient photoconduction experiments are carried out on nine different Phthalocyanine compounds under a variety of conditions. The results obtained are interpreted using the BUIC, Plasma equations and neutral photoconductor theories.

  20. Wide Bandgap Extrinsic Photoconductive Switches

    NASA Astrophysics Data System (ADS)

    Sullivan, James Stephen

    Wide Bandgap Extrinsic Photoconductive Switches Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6H-SiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators. The successful development of a vanadium compensated, 6H-SiC extrinsic photoconductive switch for use as a closing switch for compact accelerator applications was realized by improvements made to the vanadium, nitrogen and boron impurity densities. The changes made to the impurity densities were based on the physical intuition outlined and simple rate equation models. The final 6H-SiC impurity 'recipe' calls for vanadium, nitrogen and boron densities of 2.5 e17 cm-3, 1.25e17 cm-3 and ≤ 1e16 cm-3, respectively. This recipe was originally developed to maximize the quantum efficiency of the vanadium compensated 6H-SiC, while maintaining a thermally stable semi-insulating material. The rate equation models indicate that, besides increasing the quantum efficiency, the impurity recipe should be expected to also increase the carrier recombination time. Three generations of 6H-SiC materials were tested. The

  1. Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Aoki, T.; Fukuhara, N.; Osada, T.; Sazawa, H.; Hata, M.; Inoue, T.

    2014-07-01

    Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al2O3. This AlN passivation incorporated nitrogen at the Al2O3/GaAs interface, improving the capacitance-voltage (C-V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C-V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (Dit). The Dit was reduced over the entire GaAs band gap. In particular, these devices exhibited Dit around the midgap of less than 4 × 1012 cm-2eV-1, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

  2. Quantum-dot based ultrafast photoconductive antennae for efficient THz radiation

    NASA Astrophysics Data System (ADS)

    Gorodetsky, Andrei; Bazieva, Natalia; Rafailov, Edik U.

    2016-03-01

    Here we overview our work on quantum dot based THz photoconductive antennae, capable of being pumped at very high optical intensities of higher than 1W optical mean power, i.e. about 50 times higher than the conventional LT-GaAs based antennae. Apart from high thermal tolerance, defect-free GaAs crystal layers in an InAs:GaAs quantum dot structure allow high carrier mobility and ultra-short photo carrier lifetimes simultaneously. Thus, they combine the advantages and lacking the disadvantages of GaAs and LT-GaAs, which are the most popular materials so far, and thus can be used for both CW and pulsed THz generation. By changing quantum dot size, composition, density of dots and number of quantum dot layers, the optoelectronic properties of the overall structure can be set over a reasonable range-compact semiconductor pump lasers that operate at wavelengths in the region of 1.0 μm to 1.3 μm can be used. InAs:GaAs quantum dot-based antennae samples show no saturation in pulsed THz generation for all average pump powers up to 1W focused into 30 μm spot. Generated THz power is super-linearly proportional to laser pump power. The generated THz spectrum depends on antenna design and can cover from 150 GHz up to 1.5 THz.

  3. Temperature and illumination intensity dependence of photoconductivity in sputter-deposited heteroepitaxial (100)CdTe layers

    NASA Astrophysics Data System (ADS)

    Das, S. R.; Cook, J. G.; Mukherjee, G.

    1991-06-01

    The photoconductivity behavior and the Hall-effect of sputter-deposited heteroepitaxial (100)CdTe layers grown at temperatures between 300 and 325 C were investigated. The (100)CdTe epilayers were found to be highly photoconductive and exhibited photoconductivity/dark conductivity ratios as high as 1 x 10 to the 6th at around 200 K. Photoconductivity showed a sublinear dependence on the illumination intensity and was higher at higher temperatures. It is shown that the model of Simmons and Taylor (1974) developed to explain photoconductivity in amorphous semiconductors is also applicable to the (100)CdTe epitaxial layers.

  4. Photoconductive switch enhancements for use in Blumlein pulse generators

    SciTech Connect

    Davanloo, F.; Park, H.; Collins, C. B.; Agee, F. J.

    1999-06-10

    Stacked Blumlein pulse generators developed at the University of Texas at Dallas have produced high-power waveforms with risetimes and repetition rates in the range of 0.2-50 ns and 1-300 Hz, respectively, using a conventional thyratron, spark gap or photoconductive switch. Adaptation of the design has enabled the stacked Blumleins to produce 80 MW, nanosecond pulses with risetimes better than 200 ps into nominally matched loads. The device has a compact line geometry and is commutated by a single GaAs photoconductive switch triggered by a low power laser diode array. Our current investigations involve the switch characteristics that affect the broadening of the current channels in the avalanche, pre-avalanche seedings, the switch lifetime and the durability. This report presents the progress toward improving the GaAs switch operation and lifetime in stacked Blumlein pulsers. Advanced switch treatments including diamond film overcoating are implemented and discussed.

  5. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  6. GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots

    NASA Astrophysics Data System (ADS)

    Kundu, Souvik; Rao Gollu, Sankara; Sharma, Ramakant; Halder, Nripendra. N.; Biswas, Pranab; Banerji, P.; Gupta, D.

    2013-08-01

    Ultrathin InP passivated GaAs non-volatile memory devices were fabricated with chemically synthesized 5 nm ZnO quantum dots embedded into ZrO2 high-k oxide matrix deposited through metal organic chemical vapor deposition. In these memory devices, the memory window was found to be 6.10 V and the obtained charge loss was only 15.20% after 105 s. The superior retention characteristics and a wide memory window are achieved due to presence of ZnO quantum dots between tunneling and control oxide layers. Room temperature Coulomb blockade effect was found in these devices and it was ascertained to be the main reason for low leakage. Electronic band diagram with program and erase operations were described on the basis of electrical characterizations.

  7. Photoconductivity in Dirac materials

    SciTech Connect

    Shao, J. M.; Yang, G. W.

    2015-11-15

    Two-dimensional (2D) Dirac materials including graphene and the surface of a three-dimensional (3D) topological insulator, and 3D Dirac materials including 3D Dirac semimetal and Weyl semimetal have attracted great attention due to their linear Dirac nodes and exotic properties. Here, we use the Fermi’s golden rule and Boltzmann equation within the relaxation time approximation to study and compare the photoconductivity of Dirac materials under different far- or mid-infrared irradiation. Theoretical results show that the photoconductivity exhibits the anisotropic property under the polarized irradiation, but the anisotropic strength is different between 2D and 3D Dirac materials. The photoconductivity depends strongly on the relaxation time for different scattering mechanism, just like the dark conductivity.

  8. Study on the high-power semi-insulating GaAs PCSS with quantum well structure

    NASA Astrophysics Data System (ADS)

    Luan, Chongbiao; Wang, Bo; Huang, Yupeng; Li, Xiqin; Li, Hongtao; Xiao, Jinshui

    2016-05-01

    A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity of the AlGaAs/GaAs PCSS was larger than 106 shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.

  9. Theoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Dib, Elias; Bescond, Marc; Cavassilas, Nicolas; Michelini, Fabienne; Raymond, Laurent; Lannoo, Michel

    2013-08-01

    Based on a self-consistent multi-band quantum transport code including hole-phonon scattering, we compare current characteristics of Si, Ge, and GaAs p-type double-gate transistors. Electronic properties are analyzed as a function of (i) transport orientation, (ii) channel material, and (iii) gate length. We first show that ⟨100⟩-oriented devices offer better characteristics than their ⟨110⟩-counterparts independently of the material choice. Our results also point out that the weaker impact of scattering in Ge produces better electrical performances in long devices, while the moderate tunneling effect makes Si more advantageous in ultimately scaled transistors. Moreover, GaAs-based devices are less advantageous for shorter lengths and do not offer a high enough ON current for longer gate lengths. According to our simulations, the performance switching between Si and Ge occurs for a gate length of 12 nm. The conclusions of the study invite then to consider ⟨100⟩-oriented double-gate devices with Si for gate length shorter than 12 nm and Ge otherwise.

  10. Photoconductive switch package

    DOEpatents

    Ca[rasp, George J

    2013-10-22

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  11. Photoconductive switch package

    SciTech Connect

    Caporaso, George J.

    2015-10-27

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  12. Current Sharing Among Multiple Lock-On Filaments in GaAs

    NASA Astrophysics Data System (ADS)

    Hjalmarson, H. P.; Loubriel, G. M.; Zutavern, F. J.

    1998-03-01

    Optically-triggered, high-power photoconductive semiconductor switches (PCSS's) using semi-insulating GaAs are under development at Sandia. These switches carry current in high carrier-density filaments. A major problem is the increased electrode damage in high power applications. One method we use to increase switch longevity is to trigger multiple filaments which share the current. For this talk, a hydrodynamic implementation of the collective impact ionization theory is used to evaluate and refine this method. To be specific, the current-voltage characteristic for two filaments is compared with that for a single filament. An important issue is the interaction of the two filaments as a function of their distance separation.

  13. Experiments on Photoconductivity

    ERIC Educational Resources Information Center

    Kraftmakher, Yaakov

    2012-01-01

    Computer-assisted experiments with CdS and CdSe photoresistors are described. The most important characteristics of the photoresistors are determined: (i) the spectral response, (ii) the photocurrent versus incident radiant power, (iii) the rise and decay time constants and (iv) the frequency response to modulated light. The photoconductivity gain…

  14. Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

    SciTech Connect

    ISLAM,N.E.; SCHAMILOGLU,E.; MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; JOSHI,R.P.

    2000-05-30

    The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of {approximately} 10{sup 4} shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10{sup 8} shots for electro-optic drivers. Much effort is currently

  15. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system

    NASA Astrophysics Data System (ADS)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-01

    This paper presents a compressive study on the fabrication and optimization of GaAs metal-oxide-semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal-organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance-voltage (C-V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm-2 eV-1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  16. Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

    NASA Astrophysics Data System (ADS)

    Wang, L. S.; Xu, J. P.; Zhu, S. Y.; Huang, Y.; Lai, P. T.

    2013-08-01

    The interfacial and electrical properties of sputtered HfTiON on sulfur-passivated GaAs with or without TaON as interfacial passivation layer (IPL) are investigated. Experimental results show that the GaAs metal-oxide-semiconductor capacitor with HfTiON/TaON stacked gate dielectric annealed at 600 °C exhibits low interface-state density (1.0 × 1012 cm-2 eV-1), small gate leakage current (7.3 × 10-5 A cm-2 at Vg = Vfb + 1 V), small capacitance equivalent thickness (1.65 nm), and large equivalent dielectric constant (26.2). The involved mechanisms lie in the fact that the TaON IPL can effectively block the diffusions of Hf, Ti, and O towards GaAs surface and suppress the formation of interfacial As-As bonds, Ga-/As-oxides, thus unpinning the Femi level at the TaON/GaAs interface and improving the interface quality and electrical properties of the device.

  17. Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

    SciTech Connect

    Aoki, T. Fukuhara, N.; Osada, T.; Sazawa, H.; Hata, M.; Inoue, T.

    2014-07-21

    Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap of less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

  18. Photorefractive Semiconductors and Applications

    NASA Technical Reports Server (NTRS)

    Chen, Li-Jen; Luke, Keung L.

    1993-01-01

    Photorefractive semiconductors are attractive for information processing, becuase of fast material response, compatibility with semiconductor lasers, and availability of cross polarization diffraction for enhancing signal-to-noise ration. This paper presents recent experimental results on information processing using photorefractive GaAs, InP and CdTe, including image processing with semiconductor lasers.

  19. Paradoxes of photoconductive target and optical control of secondary ion yield

    SciTech Connect

    Rokakh, A. G. Matasov, M. D.

    2010-01-15

    This study of the photoconductivity of semiconductors, in particular, cadmium chalcogenides as materials for targets of vacuum image converters followed the path of overcoming paradoxes. The concepts developed by the classics of photoelectricity also help to understand the paradoxes of the new secondary-ion photoelectric effect, especially, its spectral characteristic. The optical channel of secondary ion yield control via a photoconductive target opens the way to a new branch of nanotechnology, i.e., optoionics.

  20. Coherent and incoherent terahertz beams measured from a terahertz photoconductive antenna

    SciTech Connect

    Ho Wu, Dong; Graber, Benjamin; Kim, Christopher; Qadri, S. B.; Garzarella, Anthony

    2014-02-03

    We have systematically measured and analyzed the terahertz beams of a photoconductive antenna fabricated on a GaAs substrate. Our data indicate that the antenna produces both coherent and incoherent terahertz beams. The former is produced largely by the plasmon, and the latter is believed to be due to the black body radiation resulting from the thermal excitations and Joule heating by both the femto-second laser and the bias voltage, applied across the electrodes of the antenna. The terahertz-beam property is greatly affected by the operating condition of the photoconductive antenna.

  1. Fast Photoconductive Responses in Organometal Halide Perovskite Photodetectors.

    PubMed

    Wang, Fei; Mei, Jingjing; Wang, Yunpeng; Zhang, Ligong; Zhao, Haifeng; Zhao, Dongxu

    2016-02-01

    Inorganic semiconductor-based photodetectors have been suffering from slow response speeds, which are caused by the persistent photoconductivity of semiconductor materials. For realizing high speed optoelectronic devices, the organometal halide perovskite thin films were applied onto the interdigitated (IDT) patterned Au electrodes, and symmetrical structured photoconductive detectors were achieved. The detectors were sensitive to the incident light signals, and the photocurrents of the devices were 2-3 orders of magnitude higher than dark currents. The responsivities of the devices could reach up to 55 mA W(1-). Most importantly, the detectors have a fast response time of less than 20 μs. The light and bias induced dipole rearrangement in organometal perovskite thin films has resulted in the instability of photocurrents, and Ag nanowires could quicken the process of dipole alignment and stabilize the photocurrents of the devices. PMID:26796674

  2. Photoconductivity of CdS under high pressure

    NASA Astrophysics Data System (ADS)

    Savić, Pavle; Urošević, Vladeta

    1987-04-01

    The photoconductivity of the high-pressure (rocksalt) phase of CdS has been investigated over the 30-120 kbar pressure range. A decrease of the photo-threshold from 1.60 eV (at 30 kbar) to 1.49 eV (at 120 kbar) indicates an indirect gap semiconductor. The values obtained have been compared with the Savić-Kašanin theory.

  3. Properties of high gain GaAs switches for pulsed power applications

    SciTech Connect

    Zutavern, F.J.; Loubriel, G.M.; Hjalmarson, H.P.; Mar, A.; Helgeson, W.D.; O`Malley, M.W.; Ruebush, M.H.; Falk, R.A.

    1997-09-01

    High gain GaAs photoconductive semiconductor switches (PCSS) are being used in a variety of electrical and optical short pulse applications. The highest power application, which the authors are developing, is a compact, repetitive, short pulse linear induction accelerator. The array of PCSS, which drive the accelerator, will switch 75 kA and 250 kV in 30 ns long pulses at 50 Hz. The accelerator will produce a 700 kV, 7kA electron beam for industrial and military applications. In the low power regime, these switches are being used to switch 400 A and 5 kV to drive laser diode arrays which produce 100 ps optical pulses. These short optical pulses are for military and commercial applications in optical and electrical range sensing, 3D laser radar, and high speed imaging. Both types of these applications demand a better understanding of the switch properties to increase switch lifetime, reduce jitter, optimize optical triggering, and improve overall switch performance. These applications and experiments on the fundamental behavior of high gain GaAs switches will be discussed. Open shutter, infra-red images and time-resolved images of the current filaments, which form during high gain switching, will be presented. Results from optical triggering experiments to produce multiple, diffuse filaments for high current repetitive switching will be described.

  4. Triggering GaAs lock-on switches with laser diode arrays

    SciTech Connect

    Loubriel, G.M.; Buttram, M.T.; Helgeson, W.D.; McLaughlin, D.L.; O'Malley, M.W.; Zutavern, F.J. ); Rosen, A.; Stabile, P.J. )

    1990-01-01

    Laser diode arrays have been used to trigger GaAs Photoconducting Semiconductor Switches (PCSS) charged to voltages of up to 60 kV and conducting currents of 580 A. The driving forces behind the use of laser diode arrays are compactness, elimination of complicated optics, and the ability to run at high repetition rates. Laser diode arrays are compactness, elimination of complicated optics, and the ability to run at high repetition rates. Laser diode arrays can trigger GaAs at high fields as the result of a new switching mode (lock-on) with very high carrier number gain. We have achieved switching of up to 10 MW in a 60 {Omega} system, with a pulse rise time of 500 ps. At 1.2 MW we have achieved repetition rates of 1 kHz with switch rise time of 500 ps for 10{sup 5} shots. The laser diode array used for these experiments delivers a 166 W pulse. In a single shot mode we have switched 4 kA with a flash lamp pumped laser and 600 A with the 166 W array. 7 refs., 5 figs.

  5. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80 K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83 eV to 1.0 eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  6. Electric field distribution characteristics of photoconductive antennas

    NASA Astrophysics Data System (ADS)

    Zou, Sheng-Wu; Zhang, Tong-Yi

    2012-10-01

    Photoexcitation of biased semiconductor photoconductive antennas by femtosecond pulses is the most common and convenient technique for generating strong terahertz (THz) pulses. In this paper, we use the three-dimensional (3D) finite-difference-time-domain (FDTD) to analyze electric field distribution of THz pulses in the near-field from a photoconductive antenna. The simulation is based on solving Maxwell's equations and the carrier rate equations simultaneously on realistic dipole antenna structures. The 3D FDTD simulation gives detailed features of THz electric field distribution in and out of the antenna. It is found that the difference of near-field distribution between the substrate and free space is considerably large. The fields of the alternating-current dipole exhibit an unsymmetrical distribution and a large deviation from those calculated using the simple Hertzian dipole theory. The magnitude of THz field in and out of the substrate attenuates rapidly while it holds the line in the gap center. The high-frequency components of THz radiation emission come only from the dipole antenna, while the low-frequency components are from both the center electrodes and coplanar stripline waveguide. This work can be used to optimize the design of antenna geometry and raise the radiation field power.

  7. Photoconductive detectors with fast temporal response for laser produced plasma experiments

    SciTech Connect

    May, M. J.; Halvorson, C.; Perry, T.; Weber, F.; Young, P.; Silbernagel, C.

    2008-10-15

    Processes during laser plasma experiments typically have time scales that are less than 100 ps. The measurement of these processes requires x-ray detectors with fast temporal resolution. We have measured the temporal responses and linearity of several different x-ray sensitive photoconductive detectors (PCDs). The active elements of the detectors investigated include both diamond (natural and synthetic) and GaAs crystals. The typical time responses of the GaAs PCDs are approximately 60 ps, respectively. Some characterizations using x-ray radiation from a synchrotron radiation source are presented.

  8. Photoconductive Detectors with Fast Temporal Response for Laser Produced Plasma Experiments.

    SciTech Connect

    May, M; Halvorson, C; Perry, T; Weber, F; Young, P; Silbernagel, C

    2008-05-06

    Processes during laser plasma experiments typically have time scales that are less than 100 ps. The measurement of these processes requires X-ray detectors with fast temporal resolution. We have measured the temporal responses and linearity of several different X-ray sensitive Photoconductive Detectors (PCDs). The active elements of the detectors investigated include both diamond (natural and synthetic) and GaAs crystals. The typical time responses of the GaAs PCDs are approximately 60 ps, respectively. Some characterizations using X-ray light from a synchrotron light source are presented.

  9. Photoconductive Detectors with Fast Temporal Response for Laser Produced Plasma Experiments

    SciTech Connect

    M. J. May, C. Halvorson, T. Perry, F. Weber, P. Young, C. Silbernagel

    2008-06-01

    Processes during laser plasma experiments typically have time scales that are less than 100 ps. The measurement of these processes requires X-ray detectors with fast temporal resolution. We have measured the temporal responses and linearity of several different Xray sensitive Photoconductive Detectors (PCDs). The active elements of the detectors investigated include both diamond (natural and synthetic) and GaAs crystals. The typical time responses of the GaAs PCDs are approximately 60 ps, respectively. Some characterizations using X-ray light from a synchrotron light source are presented.

  10. Photoconductive detectors with fast temporal response for laser produced plasma experiments.

    PubMed

    May, M J; Halvorson, C; Perry, T; Weber, F; Young, P; Silbernagel, C

    2008-10-01

    Processes during laser plasma experiments typically have time scales that are less than 100 ps. The measurement of these processes requires x-ray detectors with fast temporal resolution. We have measured the temporal responses and linearity of several different x-ray sensitive photoconductive detectors (PCDs). The active elements of the detectors investigated include both diamond (natural and synthetic) and GaAs crystals. The typical time responses of the GaAs PCDs are approximately 60 ps, respectively. Some characterizations using x-ray radiation from a synchrotron radiation source are presented. PMID:19044466

  11. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  12. Molecular self-assembly at bare semiconductor surfaces: preparation and characterization of highly organized octadecanethiolate monolayers on GaAs(001).

    PubMed

    McGuiness, Christine L; Shaporenko, Andrey; Mars, Carole K; Uppili, Sundararajan; Zharnikov, Michael; Allara, David L

    2006-04-19

    Through rigorous control of preparation conditions, organized monolayers with a highly reproducible structure can be formed by solution self-assembly of octadecanethiol on GaAs (001) at ambient temperature. A combination of characterization probes reveal a structure with conformationally ordered alkyl chains tilted on average at 14 +/- 1 degrees from the surface normal with a 43 +/- 5 degrees twist, a highly oleophobic and hydrophobic ambient surface, and direct S-GaAs attachment. Analysis of the tilt angle and film thickness data shows a significant mismatch of the average adsorbate molecule spacings with the spacings of an intrinsic GaAs(001) surface lattice. The monolayers are stable up to approximately 100 degrees C and exhibit an overall thermal stability which is lower than that of the same monolayers on Au[111] surfaces. A two-step solution assembly process is observed: rapid adsorption of molecules over the first several hours to form disordered structures with molecules lying close to the substrate surface, followed by a slow densification and asymptotic approach to final ordering. This process, while similar to the assembly of alkanethiols on Au[111], is nearly 2 orders of magnitude slower. Finally, despite differences in assembly rates and the thermal stability, exchange experiments with isotopically tagged molecules show that the octadecanethiol on GaAs(001) monolayers undergo exchange with solute thiol molecules at roughly the same rate as the corresponding exchanges of the same monolayers on Au[111]. PMID:16608359

  13. InP:Fe photoconducting device

    DOEpatents

    Hammond, R.B.; Paulter, N.G.; Wagner, R.S.

    A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

  14. Simulations of terahertz pulse emission from thin-film semiconductor structures

    NASA Astrophysics Data System (ADS)

    Semichaevsky, Andrey

    The photo-Dember effect is the formation of transient electric dipoles due to the interaction of semiconductors with ultrashort optical pulses. Typically the optically-induced dipole moments vary on the ns- or ps- scales, leading to the emission of electromagnetic pulses with terahertz (THz) bandwidths. One of the applications of the photo-Dember effect is a photoconductive dipole antenna (PDA). This work presents a computational model of a PDA based on Maxwell's equations coupled to the Boltzmann transport equation. The latter is solved semiclassically for the doped GaAs using a continuum approach. The emphasis is on the accurate prediction of the emitted THz pulse shape and bandwidth, particularly when materials are doped with a rare-earth metal such as erbium or terbium that serve as carrier recombination centers. Field-dependent carrier mobility is determined from particle-based simulations. Some of the previous experimental results are used as a basis for comparison with our model.

  15. Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path

    DOEpatents

    Nelson, Scott D.

    2016-05-10

    A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or apertures at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate, so as to geometrically constrain the conductivity path to within the triple junction region.

  16. Strain-induced photoconductivity in thin films of Co doped amorphous carbon.

    PubMed

    Jiang, Y C; Gao, J

    2014-01-01

    Traditionally, strain effect was mainly considered in the materials with periodic lattice structure, and was thought to be very weak in amorphous semiconductors. Here, we investigate the effects of strain in films of cobalt-doped amorphous carbon (Co-C) grown on 0.7PbMg(1/3)Nb(2/3)O3-0.3PbTiO3 (PMN-PT) substrates. The electric transport properties of the Co-C films were effectively modulated by the piezoelectric substrates. Moreover, we observed, for the first time, strain-induced photoconductivity in such an amorphous semiconductor. Without strain, no photoconductivity was observed. When subjected to strain, the Co-C films exhibited significant photoconductivity under illumination by a 532-nm monochromatic light. A strain-modified photoconductivity theory was developed to elucidate the possible mechanism of this remarkable phenomenon. The good agreement between the theoretical and experimental results indicates that strain-induced photoconductivity may derive from modulation of the band structure via the strain effect. PMID:25338641

  17. Strain-induced photoconductivity in thin films of Co doped amorphous carbon

    PubMed Central

    Jiang, Y. C.; Gao, J.

    2014-01-01

    Traditionally, strain effect was mainly considered in the materials with periodic lattice structure, and was thought to be very weak in amorphous semiconductors. Here, we investigate the effects of strain in films of cobalt-doped amorphous carbon (Co-C) grown on 0.7PbMg1/3Nb2/3O3-0.3PbTiO3 (PMN-PT) substrates. The electric transport properties of the Co-C films were effectively modulated by the piezoelectric substrates. Moreover, we observed, for the first time, strain-induced photoconductivity in such an amorphous semiconductor. Without strain, no photoconductivity was observed. When subjected to strain, the Co-C films exhibited significant photoconductivity under illumination by a 532-nm monochromatic light. A strain-modified photoconductivity theory was developed to elucidate the possible mechanism of this remarkable phenomenon. The good agreement between the theoretical and experimental results indicates that strain-induced photoconductivity may derive from modulation of the band structure via the strain effect. PMID:25338641

  18. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

  19. Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors

    DOEpatents

    Biefeld, Robert M.; Dawson, L. Ralph; Fritz, Ian J.; Kurtz, Steven R.; Zipperian, Thomas E.

    1991-01-01

    A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.

  20. Photoconductive switching for HPM (high power microwave) generation

    SciTech Connect

    Pocha, M.D.; Hofer, W.W.

    1990-01-01

    Photoconductive switching has been explored at LLNL and demonstrated to be a viable technology for high power microwave (HPM) generation. This technology enables the development of compact, portable, and efficient HPM sources. At LLNL we have successfully switched 35 KV in <200 ps using laser triggered, 1 {times} 5 {times} 20 mm GaAs switches. Based on these results we are developing an HPM generator with applications for HPM weapons and high power, wideband radar. The paper will discuss the physics limits and tradeoffs in the application of this technology. Among the topics discussed will be switching efficiency, candidate switch materials, laser requirements, applicable laser technologies, generator configurations, and cooling requirements and techniques. In addition to presenting theoretical and practical considerations, the paper will discuss on-going work at LLNL and elsewhere. 11 refs., 2 figs., 1 tab.

  1. Pulsed terahertz time domain spectroscopy of vertically structured photoconductive antennas

    NASA Astrophysics Data System (ADS)

    Faulks, R.; Rihani, S.; Beere, H. E.; Evans, M. J.; Ritchie, D. A.; Pepper, M.

    2010-02-01

    We present a terahertz (THz) photoconductive emitter structure, which employs a n-doped layer underneath a low-temperature-grown GaAs region to enable the THz transient to couple vertically through a defined mesa. A nonlinear bias dependence is observed, yielding an order in magnitude improvement in power for a mesa device with a 100 μm2 area over a conventional planar control reference device at 32 V and 5 mW illumination power. We relate the bias dependence of the THz signal to the breakdown voltage observed in the current-voltage characteristic. Reducing the antenna gap size through reducing the thickness of the low temperature-GaAs region below 1 μm shows a large improvement in the bandwidth of the device, with an enhancement of the normalized intensity between 0.2 to 2 THz for a bow-tie antenna geometry.

  2. Photoconductive switching for HPM (High Power Microwave) generation

    NASA Astrophysics Data System (ADS)

    Pocha, M. D.; Hofer, W. W.

    Photoconductive switching has been explored at LLNL and demonstrated to be a viable technology for high power microwave (HPM) generation. This technology enables the development of compact, portable, and efficient HPM sources. At LLNL we have successfully switched 35 KV in less than 200 ps using laser triggered, 1 x 5 x 20 mm GaAs switches. Based on these results we are developing an HPM generator with applications for HPM weapons and high power, wideband radar. The paper will discuss the physics limits and tradeoffs in the application of this technology. Among the topics discussed will be switching efficiency, candidate switch materials, laser requirements, applicable laser technologies, generator configurations, and cooling requirements and techniques. In addition to presenting theoretical and practical considerations, the paper will discuss on-going work at LLNL and elsewhere.

  3. Difference Between Far-Infrared Photoconductivity Spectroscopy and Absorption Spectroscopy: Theoretical Evidence of the Electron Reservoir Mechanism

    NASA Astrophysics Data System (ADS)

    Toyoda, Tadashi; Fujita, Maho; Uchida, Tomohisa; Hiraiwa, Nobuyoshi; Fukuda, Taturo; Koizumi, Hideki; Zhang, Chao

    2013-08-01

    The intriguing difference between far-infrared photoconductivity spectroscopy and absorption spectroscopy in the measurement of the magnetoplasmon frequency in GaAs quantum wells reported by Holland et al. [Phys. Rev. Lett. 93, 186804 (2004)] remains unexplained to date. This Letter provides a consistent mechanism to solve this puzzle. The mechanism is based on the electron reservoir model for the integer quantum Hall effect in graphene [Phys. Lett. A 376, 616 (2012)]. We predict sharp kinks to appear in the magnetic induction dependence of the magnetoplasmon frequency at very low temperatures such as 14 mK in the same GaAs quantum well sample used by Holland et al..

  4. Ultrahigh photoconductivity of bandgap-graded CdSxSe1‑x nanowires probed by terahertz spectroscopy

    NASA Astrophysics Data System (ADS)

    Liu, Hongwei; Lu, Junpeng; Yang, Zongyin; Teng, Jinghua; Ke, Lin; Zhang, Xinhai; Tong, Limin; Sow, Chorng Haur

    2016-06-01

    Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdSxSe1‑x nanowires and its detailed analysis by means of ultrafast optical-pump terahertz-probe (OPTP) spectroscopy. The recombination rates and carrier mobility are quantitatively obtained via investigation of the transient carrier dynamics in the nanowires. By analysis of the terahertz (THz) spectra, we obtain an insight into the bandgap gradient and band alignment to carrier transport along the nanowires. The demonstration of the ultrahigh photoconductivity makes bandgap-graded CdSxSe1‑x nanowires a promising candidate as building blocks for nanoscale electronic and photonic devices.

  5. Ultrahigh photoconductivity of bandgap-graded CdSxSe1−x nanowires probed by terahertz spectroscopy

    PubMed Central

    Liu, Hongwei; Lu, Junpeng; Yang, Zongyin; Teng, Jinghua; Ke, Lin; Zhang, Xinhai; Tong, Limin; Sow, Chorng Haur

    2016-01-01

    Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdSxSe1−x nanowires and its detailed analysis by means of ultrafast optical-pump terahertz-probe (OPTP) spectroscopy. The recombination rates and carrier mobility are quantitatively obtained via investigation of the transient carrier dynamics in the nanowires. By analysis of the terahertz (THz) spectra, we obtain an insight into the bandgap gradient and band alignment to carrier transport along the nanowires. The demonstration of the ultrahigh photoconductivity makes bandgap-graded CdSxSe1−x nanowires a promising candidate as building blocks for nanoscale electronic and photonic devices. PMID:27263861

  6. Ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires probed by terahertz spectroscopy.

    PubMed

    Liu, Hongwei; Lu, Junpeng; Yang, Zongyin; Teng, Jinghua; Ke, Lin; Zhang, Xinhai; Tong, Limin; Sow, Chorng Haur

    2016-01-01

    Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires and its detailed analysis by means of ultrafast optical-pump terahertz-probe (OPTP) spectroscopy. The recombination rates and carrier mobility are quantitatively obtained via investigation of the transient carrier dynamics in the nanowires. By analysis of the terahertz (THz) spectra, we obtain an insight into the bandgap gradient and band alignment to carrier transport along the nanowires. The demonstration of the ultrahigh photoconductivity makes bandgap-graded CdSxSe1-x nanowires a promising candidate as building blocks for nanoscale electronic and photonic devices. PMID:27263861

  7. Photoconductive detection of hydrogen in ZnO and rutile TiO2

    NASA Astrophysics Data System (ADS)

    Lavrov, E. V.; Mchedlidze, T.; Herklotz, F.

    2016-08-01

    Hydrogen donors in ZnO and rutile TiO2 are probed by means of photoconductivity and IR absorption. It is shown that the O-H bonds giving rise to the local vibrational modes (LVMs) of interstitial hydrogen at 3611 and 3290 cm-1 in the case of ZnO and TiO2, respectively, also occur in the photoconductivity spectra as Fano resonances. The effects of isotope substitution, concentration, sample thickness, influence of other donors present in both oxides are considered. Based on the shape and frequency of these resonances, it is concluded that the apparent ionization energy of interstitial hydrogen in rutile TiO2 is less than 300 meV. By a direct comparison, we also demonstrate that photoconductive detection of LVMs of defects in thin semiconductor films is superior to the standard IR absorption.

  8. Giant Persistent Photoconductivity of the WO3 Nanowires in Vacuum Condition

    PubMed Central

    2011-01-01

    A giant persistent photoconductivity (PPC) phenomenon has been observed in vacuum condition based on a single WO3 nanowire and presents some interesting results in the experiments. With the decay time lasting for 1 × 104 s, no obvious current change can be found in vacuum, and a decreasing current can be only observed in air condition. When the WO3 nanowires were coated with 200 nm SiO2 layer, the photoresponse almost disappeared. And the high bias and high electric field effect could not reduce the current in vacuum condition. These results show that the photoconductivity of WO3 nanowires is mainly related to the oxygen adsorption and desorption, and the semiconductor photoconductivity properties are very weak. The giant PPC effect in vacuum condition was caused by the absence of oxygen molecular. And the thermal effect combining with oxygen re-adsorption can reduce the intensity of PPC.

  9. Continuous and Pulsed THz generation with molecular gas lasers and photoconductive antennas gated by femtosecond pulses

    NASA Astrophysics Data System (ADS)

    Cruz, Flavio C.; Nogueira, T.; Costa, Leverson F. L.; Jarschel, Paulo F.; Frateschi, Newton C.; Viscovini, Ronaldo C.; Vieira, Bruno R. B.; Guevara, Victor M. B.; Pereira, Daniel

    2008-04-01

    We report THz generation based on two systems: 1) continuous-wave (cw) laser generation in molecular gas lasers, and 2) short pulse generation in photoconductive antennas, gated by femtosecond near-infrared Ti:sapphire lasers. With the first system, we have generated tens of monochromatic cw laser lines over the last years, extending roughly from 40 microns to several hundred microns. This is done by optical pumping of gas lasers based on polar molecules such as methanol and its isotopes. In the second system, under development, pulsed THz radiation is generated by a photoconductive antenna built in a semi-insulating GaAs substrate excited by femtosecond pulses from a near-infrared (800 nm) Ti:sapphire laser.

  10. Directly tailoring photon-electron coupling for sensitive photoconductance.

    PubMed

    Huang, Zhiming; Zhou, Wei; Huang, Jingguo; Wu, Jing; Gao, Yanqing; Qu, Yue; Chu, Junhao

    2016-01-01

    The coupling between photons and electrons is at the heart of many fundamental phenomena in nature. Despite tremendous advances in controlling electrons by photons in engineered energy-band systems, control over their coupling is still widely lacking. Here we demonstrate an unprecedented ability to couple photon-electron interactions in real space, in which the incident electromagnetic wave directly tailors energy bands of solid to generate carriers for sensitive photoconductance. By spatially coherent manipulation of metal-wrapped material system through anti-symmetric electric field of the irradiated electromagnetic wave, electrons in the metals are injected and accumulated in the induced potential well (EIW) produced in the solid. Respective positive and negative electric conductances are easily observed in n-type and p-type semiconductors into which electrons flow down from the two metallic sides under light irradiation. The photoconductivity is further confirmed by sweeping the injected electrons out of the semiconductor before recombination applied by sufficiently strong electric fields. Our work opens up new perspectives for tailoring energy bands of solids and is especially relevant to develop high effective photon detection, spin injection, and energy harvesting in optoelectronics and electronics. PMID:26964883

  11. Directly tailoring photon-electron coupling for sensitive photoconductance

    NASA Astrophysics Data System (ADS)

    Huang, Zhiming; Zhou, Wei; Huang, Jingguo; Wu, Jing; Gao, Yanqing; Qu, Yue; Chu, Junhao

    2016-03-01

    The coupling between photons and electrons is at the heart of many fundamental phenomena in nature. Despite tremendous advances in controlling electrons by photons in engineered energy-band systems, control over their coupling is still widely lacking. Here we demonstrate an unprecedented ability to couple photon-electron interactions in real space, in which the incident electromagnetic wave directly tailors energy bands of solid to generate carriers for sensitive photoconductance. By spatially coherent manipulation of metal-wrapped material system through anti-symmetric electric field of the irradiated electromagnetic wave, electrons in the metals are injected and accumulated in the induced potential well (EIW) produced in the solid. Respective positive and negative electric conductances are easily observed in n-type and p-type semiconductors into which electrons flow down from the two metallic sides under light irradiation. The photoconductivity is further confirmed by sweeping the injected electrons out of the semiconductor before recombination applied by sufficiently strong electric fields. Our work opens up new perspectives for tailoring energy bands of solids and is especially relevant to develop high effective photon detection, spin injection, and energy harvesting in optoelectronics and electronics.

  12. Directly tailoring photon-electron coupling for sensitive photoconductance

    PubMed Central

    Huang, Zhiming; Zhou, Wei; Huang, Jingguo; Wu, Jing; Gao, Yanqing; Qu, Yue; Chu, Junhao

    2016-01-01

    The coupling between photons and electrons is at the heart of many fundamental phenomena in nature. Despite tremendous advances in controlling electrons by photons in engineered energy-band systems, control over their coupling is still widely lacking. Here we demonstrate an unprecedented ability to couple photon-electron interactions in real space, in which the incident electromagnetic wave directly tailors energy bands of solid to generate carriers for sensitive photoconductance. By spatially coherent manipulation of metal-wrapped material system through anti-symmetric electric field of the irradiated electromagnetic wave, electrons in the metals are injected and accumulated in the induced potential well (EIW) produced in the solid. Respective positive and negative electric conductances are easily observed in n-type and p-type semiconductors into which electrons flow down from the two metallic sides under light irradiation. The photoconductivity is further confirmed by sweeping the injected electrons out of the semiconductor before recombination applied by sufficiently strong electric fields. Our work opens up new perspectives for tailoring energy bands of solids and is especially relevant to develop high effective photon detection, spin injection, and energy harvesting in optoelectronics and electronics. PMID:26964883

  13. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al{sub 2}O{sub 3} gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

    SciTech Connect

    Aoki, Takeshi Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-15

    This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al{sub 2}O{sub 3} gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al{sub 2}O{sub 3} in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al{sub 2}O{sub 3} layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (D{sub it}) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce D{sub it} to below 2 × 10{sup 12} cm{sup −2} eV{sup −1}. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  14. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1986-01-01

    It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail.

  15. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  16. Carrier heating and negative photoconductivity in graphene

    SciTech Connect

    Heyman, J. N.; Stein, J. D.; Kaminski, Z. S.; Banman, A. R.; Massari, A. M.; Robinson, J. T.

    2015-01-07

    We investigated negative photoconductivity in graphene using ultrafast terahertz techniques. Infrared transmission was used to determine the Fermi energy, carrier density, and mobility of p-type chemical vapor deposition graphene samples. Time-resolved terahertz photoconductivity measurements using a tunable mid-infrared pump probed these samples at photon energies between 0.35 eV and 1.55 eV, approximately one-half to three times the Fermi energy of the samples. Although interband optical transitions in graphene are blocked for pump photon energies less than twice the Fermi energy, we observe negative photoconductivity at all pump photon energies investigated, indicating that interband excitation is not required to observe this effect. Our results are consistent with a thermalized free-carrier population that cools by electron-phonon scattering, but are inconsistent with models of negative photoconductivity based on population inversion.

  17. Realizing the potential of photoconductive switching for HPM applications

    SciTech Connect

    Oicles, J.A.; Grant, J.R.; Herman, M.H.

    1995-11-01

    Recent systems developments that take advantage of avalanche-mode photoconductive switching have led to major breakthroughs in high power microwave (HPM) generator performance. The best example is the GEM 2 demonstrator system developed for the Air Force. The delivered system, using over 800 BASS{trademark} photoconductive switches arrayed in 72 identical modules firing with 10-psec accuracy, produces 1 GW of peak power and an effective radiated power of over 100 GW. The authors are now looking beyond GEM 2 at continuing major improvements. The simplicity and flexibility of modular designs, such as GEM 2, facilitates new configurations and encourages timely inclusion of additional innovations. Concepts under consideration range from miniaturized generators, taking fall advantage of the solid-state approach, to generator arrays considerably larger than GEM 2. Power conditioning and antenna sizes dominate present systems. Optical triggering subsystems based on semiconductor lasers, though relatively small, are still much larger than the corresponding BASS-based microwave generators. Work underway is aimed at these limitations. Several candidate solid-state switching approaches for pulse charging, for example, offer many additional benefits. Further, commercial developments have resulted in extraordinarily compact laser drivers to effect similar size and weight benefits to the Optical Trigger Subsystem.

  18. Enhanced terahertz emission from a multilayered low temperature grown GaAs structure

    NASA Astrophysics Data System (ADS)

    Rihani, Samir; Faulks, Richard; Beere, Harvey E.; Farrer, Ian; Evans, Michael; Ritchie, David A.; Pepper, Michael

    2010-03-01

    We report the use of a multilayered structure comprising of alternating layers of low temperature grown GaAs and high temperature grown AlAs, as a terahertz (THz) photoconductive antenna emitter and receiver. Devices based on 10×10 μm2 mesa defined photoconductive gaps were fabricated on the multilayered structure, and a comparison made to conventional planar devices. The mesa defined photoconductive antennas allowed successive contact through the multilayered structure, which resulted in an increase in THz emission power and detection responsivity with increasing number of layers in contact with the antenna electrodes. A comparison with a conventional single layered device, processed in an identical mesa geometry, confirmed that the enhancement in THz emission is solely due to the multilayered nature of the device, whereas the improved receiver performance can be partially attributed to the mesa geometry.

  19. 2D nanocomposite photoconductive sensors fully dry drawn on regular paper

    NASA Astrophysics Data System (ADS)

    Brus, V. V.; Maryanchuk, P. D.; Kovalyuk, Z. D.; Abashyn, S. L.

    2015-06-01

    We proposed a new type of low-cost and environmentally friendly photoconductive sensor, based on GaSe/graphite nanocomposite fully dry drawn on paper. The proposed fully-drawn nanocomposite sensors successfully utilize the unique combination of structural and electrical properties of a layered semiconductor and graphite. In spite of the relatively pure photosensitivity of the proposed photodetectors, we believe that this work is the first step for the further development and enhancement of extremely simple and low-cost paper-based dry drawn layered semiconductor/graphite nanocomposite sensors.

  20. Emission characteristics of ion-irradiated In(0.53)Ga(0.47)As based photoconductive antennas excited at 1.55 microm.

    PubMed

    Mangeney, J; Chimot, N; Meignien, L; Zerounian, N; Crozat, P; Blary, K; Lampin, J F; Mounaix, P

    2007-07-01

    We present a detailed study of the effect of the carrier lifetime on the terahertz signal characteristics emitted by Br(+)-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited by 1550 nm wavelength femtosecond optical pulses. The temporal waveforms and the average radiated powers for various carrier lifetimes are experimentally analyzed and compared to predictions of analytical models of charge transport. Improvements in bandwidth and in average power of the emitted terahertz radiation are observed with the decrease of the carrier lifetime on the emitter. The power radiated by ion-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited by 1550 nm wavelength optical pulses is measured to be 0.8 muW. This value is comparable with or greater than that emitted by similar low temperature grown GaAs photoconductive antennas excited by 780 nm wavelength optical pulses. PMID:19547233

  1. A method of monitoring the temperature of the photoconductive antenna

    NASA Astrophysics Data System (ADS)

    Liu, Hong; Wang, Yiqi; Li, Zhou; Bai, Yang; Pu, Ting; Kuang, Tingting; Chen, Kejian

    2014-11-01

    Photoconductive antenna (PCA), as the most widely used emitter (or detector) in Terahertz time-domain spectroscopy (TDS) system, virtually acts as a semiconductor switch, whose electrical conductivity controlled by pump light. At the same time, the heat caused by the pump light and the electrical bias will be stacked in a tiny area. Inevitably, the thermal effects, which may reduce the performance of PCA and the operational lifetime of device, need to be considered, especially for that generated by a compact package fiber-pigtailed photoconductive antenna. Nonetheless, there still lacks of relevant reports about real-time temperature monitoring for PCA. This paper proposes a method to obtain the temperature information by observing the temperature dependent frequency drifting of radiation spectroscopy. In other words, it converts the temperature information via analyzing the radiation spectrum of the conventional TDS system. In this work, we simulate a design of meta-atom-loaded PCA with indium antimonide (InSb). As a kind of temperature-dependent permittivity of the semiconductor, InSb is stuffed into the gap of split-ring resonator (SRR). When the temperature increases from 300K to 380 K, the resonance frequency shifts from 0.582THz to 0.678THz (a shift more than 16%), calculated by the commercial software-CST. The significant blue shift is caused by the SRR loading temperature sensitive materials, well analyzed by the LC resonant circuit model. Then, one can clearly obtain the actual antenna temperature from the radiation spectrum through the relationship between temperature and resonance frequency. Always, this simply method could be applied to shift the peak frequency of spectrum for various applications.

  2. Heteroepitaxial growth and multiferroic properties of Mn-doped BiFeO3 films on SrTiO3 buffered III-V semiconductor GaAs

    NASA Astrophysics Data System (ADS)

    Gao, G. Y.; Yang, Z. B.; Huang, W.; Zeng, H. Z.; Wang, Y.; Chan, H. L. W.; Wu, W. B.; Hao, J. H.

    2013-09-01

    Epitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO (100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaAs have an effective ferroelectric switching. The MBFO films exhibit good ferroelectric behavior (2Pr ˜ 92 μC/cm2 and 2EC ˜ 372 kV/cm). Ferromagnetic property with saturated magnetization of 6.5 emu/cm3 and coercive field of about 123 Oe is also found in the heterostructure at room temperature.

  3. Generation of high power pulsed terahertz radiation using a plasmonic photoconductive emitter array with logarithmic spiral antennas

    SciTech Connect

    Berry, Christopher W.; Hashemi, Mohammad R.; Jarrahi, Mona

    2014-02-24

    An array of 3 × 3 plasmonic photoconductive terahertz emitters with logarithmic spiral antennas is fabricated on a low temperature (LT) grown GaAs substrate and characterized in response to a 200 fs optical pump from a Ti:sapphire mode-locked laser at 800 nm wavelength. A microlens array is used to split and focus the optical pump beam onto the active area of each plasmonic photoconductive emitter element. Pulsed terahertz radiation with record high power levels up to 1.9 mW in the 0.1–2 THz frequency range is measured at an optical pump power of 320 mW. The record high power pulsed terahertz radiation is enabled by the use of plasmonic contact electrodes, enhancing the photoconductor quantum efficiencies, and by increasing the overall device active area, mitigating the carrier screening effect and thermal breakdown at high optical pump power levels.

  4. Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures

    NASA Astrophysics Data System (ADS)

    Golovynskyi, S. L.; Dacenko, O. I.; Kondratenko, S. V.; Lavoryk, S. R.; Mazur, Yu. I.; Wang, Zh. M.; Ware, M. E.; Tarasov, G. G.; Salamo, G. J.

    2016-05-01

    Photoelectric properties of laterally correlated multilayer InGaAs/GaAs quantum dots (QDs) heterostructures are studied. The response of the photocurrent to increasing excitation intensity is found to be nonlinear and varying with excitation energy. The structures are photosensitive in a wide range of photon energies above 0.6 eV. The spectral dependence of the photoconductivity (PC) is caused by strong interaction between the bulk GaAs and the lower energy states of the wetting layer, the QDs, as well as the defect states in the GaAs band gap. In particular, a mechanism for the participation of deep electron trap levels in the photocurrent is clarified. These structures also demonstrate a high sensitivity of up to 10 A/W at low excitation intensities. However, at higher excitation intensities, the sensitivity reduces exhibiting a strong spectral dependence at the same time. The observed sublinear PC dependence on excitation power results from a direct electron-hole recombination both in the QDs and in GaAs host. The solution of rate equations included the contributions of QD ground and exited states, bulk GaAs states and the states of defects within the GaAs bandgap describes well the experimental data.

  5. New developments in photoconductive detectors

    SciTech Connect

    Han, S.

    1996-07-01

    Nearly ideal for detecting ionizing radiation, wide bandgap semiconductors present a possibility of having outstanding radiation hardness, fast charge collection and low leakage current that will allow them to be used in high radiation, high temperature, and chemically aggressive environments. Over the past few years, the improvements in the electrical quality of wide bandgap semiconductors have progressed enormously. One particular wide bandgap semiconductor, diamond, has properties which may be ideal for radiation detection. Since the discovery of low pressure and low temperature deposition of diamond, the possibility of large area diamond films have become a reality. Over the past few years, great progress has been made in advancing the electrical quality of chemical-vapor-deposited (CVD) diamond. Presently, unprecedented diamond wafer size of 7 in. diameter is possible. Due to both the present electrical quality and the available size, the utilization of diamond in radiation detection applications is not just a dream but a reality. The progression of CVD diamond`s electrical properties in the last few years will be presented along with what is currently possible. Applications of CVD diamond for the National Ignition Facility (NIF) diagnostics will be reviewed. In addition, a brief review concerning other possible wide bandgap semiconductors for ICF diagnostics will be presented.

  6. Fano resonances in photoconductivity spectra of hydrogen donors in ZnO and rutile

    NASA Astrophysics Data System (ADS)

    Lavrov, E. V.; Herklotz, F.; Weber, J.

    2015-02-01

    The results of photoconductivity studies of hydrogen donors in ZnO and rutile TiO2 are presented. It is shown that local vibrational modes of O-H bonds comprising donors in both semiconductors can be detected in photoconductivity spectra as Fano resonances at 3611 and 3290 cm-1 in the case of ZnO and TiO2, respectively. The frequencies of these features red-shift in energy down to 2668 (ZnO) and 2445 cm-1 (TiO2) if hydrogen is substituted by deuterium. Based on the frequency of the deuterium resonance it is concluded that the ionization energy of the hydrogen donor in TiO2 is less than 300 meV, which is in variance with predictions of theory. The reasons for such a discrepancy are discussed.

  7. Terahertz photoconductive antenna with metal nanoislands.

    PubMed

    Park, Sang-Gil; Choi, Yongje; Oh, Young-Jae; Jeong, Ki-Hun

    2012-11-01

    This work presents a nanoplasmonic photoconductive antenna (PCA) with metal nanoislands for enhancing terahertz (THz) pulse emission. The whole photoconductive area was fully covered with metal nanoislands by using thermal dewetting of thin metal film at relatively low temperature. The metal nanoislands serve as plasmonic nanoantennas to locally enhance the electric field of an ultrashort pulsed pump beam for higher photocarrier generation. The plasmon resonance of metal nanoislands was achieved at an excitation laser wavelength by changing the initial thickness of metal film. This nanoplasmonic PCA shows two times higher enhancement for THz pulse emission power than a conventional PCA. This work opens up a new opportunity for plasmon enhanced large-aperture THz photoconductive antennas. PMID:23187370

  8. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1983-01-01

    GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

  9. The development of integrated chemical microsensors in GaAs

    SciTech Connect

    CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

    1999-11-01

    Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

  10. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1985-01-01

    The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

  11. Unpinned GaAs MOS capacitors and transistors

    NASA Astrophysics Data System (ADS)

    Tiwari, Sandip; Wright, Steven L.; Batey, John

    1988-09-01

    Metal-oxide-semiconductor (MOS) capacitors and field-effect transistors (MOSFETs) in the GaAs semiconductor system using an unpinned interface are described. The structures utilize plasma-enhanced chemical-vapor deposition (PECVD) for the silicon-dioxide insulator on GaAs that has been terminated with a few monolayers of silicon during growth by molecular beam epitaxy. Interface densities in the structures have been reduced to about 10 to the 12th/sq cm-eV. High-frequency characteristics indicate strong inversion of both p-type and n-type GaAs. The excellent insulating quality of the oxide has allowed demonstration of quasi-static characteristics. MOSFETs operating in depletion mode with a transconductance of 60 mS/mm at 8.0-micron gate lengths have been fabricated.

  12. Negative photoconductivity of InAs nanowires.

    PubMed

    Han, Yuxiang; Zheng, Xiao; Fu, Mengqi; Pan, Dong; Li, Xing; Guo, Yao; Zhao, Jianhua; Chen, Qing

    2016-01-14

    Negative photoconductivity is observed in InAs nanowires (NWs) without a surface defective layer. The negative photoconductivity is strongly dependent on the wavelength and intensity of the light, and is also sensitive to the environmental atmosphere. Two kinds of mechanisms are discerned to work together. One is related to gas adsorption, which is photodesorption of water molecules and photo-assisted chemisorption of O2 molecules. The other one can be attributed to the photogating effect introduced by the native oxide layer outside the NWs. PMID:26631367

  13. Semiconductor technology program: Progress briefs

    NASA Technical Reports Server (NTRS)

    Galloway, K. F.; Scace, R. I.; Walters, E. J.

    1981-01-01

    Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

  14. Trap-induced photoconductivity in singlet fission pentacene diodes

    SciTech Connect

    Qiao, Xianfeng Zhao, Chen; Chen, Bingbing; Luan, Lin

    2014-07-21

    This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

  15. Trap-induced photoconductivity in singlet fission pentacene diodes

    NASA Astrophysics Data System (ADS)

    Qiao, Xianfeng; Zhao, Chen; Chen, Bingbing; Luan, Lin

    2014-07-01

    This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

  16. Optical Response in Amorphous GaAs Thin Films Prepared by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Kiwa, Toshihiko; Kawashima, Ichiro; Nashima, Shigeki; Hangyo, Masanori; Tonouchi, Masayoshi

    2000-11-01

    Femtosecond optical response in GaAs thin films has been studied. We prepared GaAs thin films on MgO substrates and on YBa2Cu3O7-δ (YBCO) thin films using pulsed laser deposition (PLD) at temperatures below 250^\\circC@. A photocarrier lifetime of less than 1 ps is measured for the prepared GaAs thin films using femtosecond time-domain reflectivity change measurements. Pulsed electromagnetic wave [terahertz (THz) radiaiton] containing a frequency component of up to 1 THz is emitted from fabricated photoconductive switches using the prepared thin films. We also evaluated the THz radiation properties emitted from the photoswitches on the YBCO thin films.

  17. High-energy passively Q-switched operation of Yb:GdCa(4)O(BO(3))(3) laser with a GaAs semiconductor saturable absorber.

    PubMed

    Chen, Xiaowen; Wang, Lisha; Han, Wenjuan; Guo, Yunfeng; Xu, Honghao; Yu, Haohai; Zhang, Huaijin; Liu, Junhai

    2015-11-16

    High-energy passively Q-switched operation of a Yb:GdCa(4)O(BO(3))(3) laser is demonstrated, with a GaAs crystal plate acting as saturable absorber. An average output power of 1.31 W at 1027 nm is produced at a pulse repetition rate of 1.92 kHz, the resulting pulse energy, duration, and peak power being respectively 0.68 mJ, 9.0 ns, and 75.6 kW. The shortest pulse duration obtained is 4.9 ns; whereas the maximum pulse energy achievable amounts to 0.83 mJ, which proves to be nearly one order of magnitude higher than ever generated from Yb or Nd lasers passively Q-switched by a GaAs saturable absorber. PMID:26698515

  18. Dember and photo-electromotive-force currents in silicon photoconductive detectors

    NASA Astrophysics Data System (ADS)

    Dikmelik, Yamaç; Davidson, Frederic M.

    2004-09-01

    Dember and photo-electromotive-force (PEMF) currents are investigated in silicon photoconductive detectors both theoretically and experimentally. Dember photocurrents were found to dominate the response of high-purity silicon samples with top-surface electrodes to a moving interference pattern. The use of surface electrodes leads to shadowed regions beneath the electrodes, and Dember photocurrents appear under short-circuit conditions. A single-charge-carrier model of the Dember effect is in good qualitative agreement with experimental results. We also show theoretically that the PEMF effect in silicon is weak compared with other semiconductors because of its relatively high intrinsic conductivity.

  19. Improved efficiency of photoconductive THz emitters by increasing the effective contact length of electrodes

    SciTech Connect

    Singh, Abhishek; Surdi, Harshad; Nikesh, V. V.; Prabhu, S. S.; Döhler, G. H.

    2013-12-15

    We study the effect of a surface modification at the interface between metallic electrodes and semiconducting substrate in Semi-Insulating GaAs (SI-GaAs) based photoconductive emitters (PCE) on the emission of Tera-Hertz (THz) radiation. We partially etch out a 500 nm thick layer of SI-GaAs in grating like pattern with various periods before the contact deposition. By depositing the electrodes on the patterned surface, the electrodes follow the contour of the grating period. This increases the effective contact length of the electrodes per unit area of the active regions on the PCE. The maxima of the electric field amplitude of the THz pulses emitted from the patterned surface are enhanced by up to more than a factor 2 as compared to an un-patterned surface. We attribute this increase to the increase of the effective contact length of the electrode due to surface patterning.

  20. Gamma ray measurements with photoconductive detectors using a dense plasma focus.

    PubMed

    May, M J; Brown, G V; Halvorson, C; Schmidt, A; Bower, D; Tran, B; Lewis, P; Hagen, C

    2014-11-01

    Photons in the MeV range emitted from the dense plasma focus (DPF) at the NSTec North Las Vegas Facility have been measured with both neutron-damaged GaAs and natural diamond photoconductive detectors (PCDs). The DPF creates or "pinches" plasmas of various gases (e.g., H2, D2, Ne, Ar., etc.) that have enough energy to create MeV photons from either bremsstrahlung and/or (n,n(')) reactions if D2 gas is used. The high bandwidth of the PCDs enabled the first ever measurement of the fast micro-pinches present in DPF plasmas. Comparisons between a slower more conventional scintillator/photomultiplier tube based nuclear physics detectors were made to validate the response of the PCDs to fast intense MeV photon signals. Significant discrepancies in the diamond PCD responses were evident. PMID:25430296

  1. Gamma ray measurements with photoconductive detectors using a dense plasma focus

    SciTech Connect

    May, M. J. Brown, G. V.; Halvorson, C.; Schmidt, A.; Bower, D.; Tran, B.; Lewis, P.; Hagen, C.

    2014-11-15

    Photons in the MeV range emitted from the dense plasma focus (DPF) at the NSTec North Las Vegas Facility have been measured with both neutron-damaged GaAs and natural diamond photoconductive detectors (PCDs). The DPF creates or “pinches” plasmas of various gases (e.g., H{sub 2}, D{sub 2}, Ne, Ar., etc.) that have enough energy to create MeV photons from either bremsstrahlung and/or (n,n{sup ′}) reactions if D{sub 2} gas is used. The high bandwidth of the PCDs enabled the first ever measurement of the fast micro-pinches present in DPF plasmas. Comparisons between a slower more conventional scintillator/photomultiplier tube based nuclear physics detectors were made to validate the response of the PCDs to fast intense MeV photon signals. Significant discrepancies in the diamond PCD responses were evident.

  2. Influence of N incorporation on persistent photoconductivity in GaAsN alloys

    NASA Astrophysics Data System (ADS)

    Field, R. L., III; Jin, Y.; Cheng, H.; Dannecker, T.; Jock, R. M.; Wang, Y. Q.; Kurdak, C.; Goldman, R. S.

    2013-04-01

    We examine the role of N environment on persistent photoconductivity (PPC) in GaAs1-xNx films. For x > 0.006, significant PPC is observed at cryogenic temperatures, with the PPC magnitude increasing with increasing x due to an increase in the density of N-induced levels. Interestingly, rapid thermal annealing suppresses the PPC magnitude and reduces the N interstitial fraction; thus, the N-induced level is likely associated with N interstitials. PPC is attributed to the photogeneration of carriers from N-induced levels to the conduction-band edge, leading to a modified N molecular bond configuration. With the addition of thermal energy, the ground state configuration is restored; the N-induced level is then able to accept carriers and the conductivity decays to its preillumination value.

  3. Radiation field screening in photoconductive antennae studied via pulsed terahertz emission spectroscopy

    NASA Astrophysics Data System (ADS)

    Loata, Gabriel C.; Thomson, Mark D.; Löffler, Torsten; Roskos, Hartmut G.

    2007-12-01

    We report terahertz emission experiments on low-temperature-grown GaAs photoconductive antennae. Two field-screening effects determine the device response: space-charge screening on a long time scale and radiation field screening of the local electric field. This latter effect is the principal cause for saturation of terahertz emission observed when the emitters are driven hard with high-repetition-rate femtosecond laser pulses. We present an equivalent-circuit model consisting of three elements: a resistor with time-dependent conductance (photoswitch), a time-dependent voltage source (space-charge screening), and the antenna impedance (terahertz emission and radiation field screening). The simulations with this voltage divider reproduce the measured data well.

  4. Design and fabrication of GaAs OMIST photodetector

    NASA Astrophysics Data System (ADS)

    Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

    1998-08-01

    We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

  5. Development of bulk GaAs room temperature radiation detectors

    SciTech Connect

    McGregor, D.S.; Knoll, G.F. . Dept. of Nuclear Engineering); Eisen, Y. . Soreq Nuclear Research Center); Brake, R. )

    1992-10-01

    This paper reports on GaAs, a wide band gap semiconductor with potential use as a room temperature radiation detector. Various configurations of Schottky diode detectors were fabricated with bulk crystals of liquid encapsulated Czochralski (LEC) semi-insulating undoped GaAs material. Basic detector construction utilized one Ti/Au Schottky contact and one Au/Ge/Ni alloyed ohmic contact. Pulsed X-ray analysis indicated pulse decay times dependent on bias voltage. Pulse height analysis disclosed non-uniform electric field distributions across the detectors tentatively explained as a consequence of native deep level donors (EL2) in the crystal.

  6. Electronic contribution to friction on GaAs

    SciTech Connect

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  7. Development and testing of gallium arsenide photoconductive detectors for ultra-fast, high dose rate electron and photon radiation measurements

    NASA Astrophysics Data System (ADS)

    Kharashvili, George

    Real time radiation dose measurements often present a challenge in high dose rate environments, like those needed for testing survivability of electronic devices or biological agents. Dosimetry needs at particle accelerator facilities require development of devices with fast (tens of picoseconds or less) response to pulsed radiation, linear response over a wide range of dose rates (up to 1011 Gy/s), high resistance to radiation damage, and successful operation in mixed gamma and neutron environments. Gallium arsenide photoconductive detectors (GaAs PCDs) have been shown to exhibit many of these desirable characteristics, especially the fast time response, when neutron irradiation is used to introduce displacement damage in the crystalline lattice of GaAs, hence improving the time response characteristics of the devices at the expense of their sensitivity. The objective of this project was to develop and test GaAs PCDs for ultra fast, high dose rate electron and bremsstrahlung radiation measurements. Effects of neutron pre-irradiation and detector size on the PCD properties were also investigated. GaAs PCDs with three different neutron irradiation levels (0, ˜1014, and 5 x 1015 n/cm 2 (1-MeV equivalent in GaAs) were fabricated. The devices were tested with 7, 20 and 38-MeV electron pulses produced by linear accelerators operating at the L-band frequency of 1.3-GHz and the S-band frequency of 2.8-GHz. In addition, detector responses at high dose rates were tested with 33-ns wide, 7-MeV maximum energy bremsstrahlung pulses produced by a pulse-power accelerator. The time response characteristics and the dose-rate ranges of application of the GaAs PCDs were determined. Several operational issues were identified. Recommendations on how to improve the PCD fabrication procedure and diagnostic capabilities for the high intensity radiation research are also discussed.

  8. Far-Infrared and Optical Studies of Gallium Arsenide and Aluminum Gallium Arsenide Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Stanaway, Mark Brian

    Available from UMI in association with The British Library. Requires signed TDF. This thesis reports far-infrared (FIR) and photoluminescence studies, performed at low temperatures (4.2K) and at magnetic fields up to 25T, of selectively and inadvertently doped bulk and low dimensional gallium arsenide (GaAs) and aluminium gallium arsenide (AlGaAs) semiconductor structures grown by molecular beam epitaxy. High-resolution FIR magnetospectroscopy of ultra -high mobility n-GaAs reveals a variety of shallow donor intra-impurity transitions plus spin-split higher Landau level transitions in the photoconductive response. The first observation of polarons bound to D^ - ions in bulk n-GaAs is reported. The excited state spectrum of the confined silicon donor in GaAs/AlGaAs multi-quantum wells (MQWs) has been examined. Narrower linewidths and more higher excited state donor transitions are noted in the present photoconductive investigation compared with previous reports. The electron recombination dynamics has been examined in silicon-doped GaAs/AlGaAs MQWs and homogeneous and sheet -doped bulk n-GaAs samples using time-resolved FIR photoconductivity. The extrinsic response of doped MQW structures suggests a potential use as a fast, sensitive detectors of FIR. FIR transmission measurements are reported for GaAs/AlGaAs quantum wells (QWs) of various widths in magnetic fields of up to 20T, tilted away from the normal to the QW plane by angles up to theta = 50^circ. Deviation of the cyclotron resonance field from a costheta law are interpreted using theoretical models describing Landau level/electric subband coupling. The in-plane magnetic field and excitation power dependence of the photoluminescence intensity of a GaAs/AlGaAs QW spectral feature is interpreted in terms of charge transfer in the QW, using a coupled oscillator model, and the efficiency of nonradiative electronic traps. In-plane magnetic field studies of the photoluminescence from a superlattice structure

  9. Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics

    NASA Astrophysics Data System (ADS)

    Paterson, G. W.; Bentley, S. J.; Holland, M. C.; Thayne, I. G.; Long, A. R.

    2011-09-01

    The admittances and subthreshold characteristics of capacitors and MOSFETs on buried InxGa1-xAs channel wafers with a dielectric stack of Gd0.25Ga0.15O0.6/Ga2O3 deposited on GaAs and In0.53Ga0.47As are reported. Both the GaAs and InGaAs interface samples show admittance characteristics indicative of the presence of defect states within the oxide, in agreement with previously reported data from the same oxides on n+ substrates. The interface state model is applied to the admittance data to extract an apparent interface state density (Dit) that includes interface and oxide states. The Dit profiles are very different and have pronounced effects on the device performance. The device subthreshold swings (SS) at low source-drain voltages are also used to extract an apparent Dit. A simple method is used to estimate the Fermi-level position within the bandgap (Et) at threshold, and the resulting Dit(Et) are found to be in good agreement with the admittance data. The importance of proper interpretation of SS and Dit in general and in GaAs interface devices in particular is emphasized. A model that accounts for the logarithmic sweep rate dependence of the extracted Dit due to the presence of oxide states is reported and used to estimate their density from SS measurements. The implications of the band parameters of an oxide with defect states within it for the comparison of different oxides on the same substrate and the issues around the comparison of results in general are discussed.

  10. Photoconducting positions monitor and imaging detector

    DOEpatents

    Shu, Deming; Kuzay, Tuncer M.

    2000-01-01

    A photoconductive, high energy photon beam detector/monitor for detecting x-rays and gamma radiation, having a thin, disk-shaped diamond substrate with a first and second surface, and electrically conductive coatings, or electrodes, of a predetermined configuration or pattern, disposed on the surfaces of the substrate. A voltage source and a current amplifier is connected to the electrodes to provide a voltage bias to the electrodes and to amplify signals from the detector.

  11. Selenium semiconductor core optical fibers

    SciTech Connect

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  12. Cubic GaS: A Surface Passivator For GaAs

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Barron, Andrew R.; Power, Michael B.; Jenkins, Phillip P.; Macinnes, Andrew N.

    1994-01-01

    Thin films of cubic form of gallium sulfide (GaS) formed on surfaces of gallium arsenide (GaAs) substrates via metal/organic chemical vapor deposition (MOCVD). Deposited cubic GaS, crystalline lattice matched to substrate GaAs, neutralizes electrically active defects on surfaces of both n-doped and p-doped GaAs. Enabling important GaAs-based semiconducting materials to serve as substrates for metal/insulator/semiconductor (MIS) capacitors. Cubic GaS enables fabrication of ZnSe-based blue lasers and light-emitting diodes. Because GaS is optically transparent, deposited to form window layers for such optoelectronic devices as light-emitting diodes, solar optical cells, and semiconductor lasers. Its transparency makes it useful as interconnection material in optoelectronic integrated circuits. Also useful in peeled-film technology because selectively etched from GaAs.

  13. Microwave GaAs Integrated Circuits On Quartz Substrates

    NASA Technical Reports Server (NTRS)

    Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

    1994-01-01

    Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

  14. Atomic hydrogen cleaning of GaAS Photocathodes

    SciTech Connect

    M. Poelker; J. Price; C. Sinclair

    1997-01-01

    It is well known that surface contaminants on semiconductors can be removed when samples are exposed to atomic hydrogen. Atomic H reacts with oxides and carbides on the surface, forming compounds that are liberated and subsequently pumped away. Experiments at Jefferson lab with bulk GaAs in a low-voltage ultra-high vacuum H cleaning chamber have resulted in the production of photocathodes with high photoelectron yield (i.e., quantum efficiency) and long lifetime. A small, portable H cleaning apparatus also has been constructed to successfully clean GaAs samples that are later removed from the vacuum apparatus, transported through air and installed in a high-voltage laser-driven spin-polarized electron source. These results indicate that this method is a versatile and robust alternative to conventional wet chemical etching procedures usually employed to clean bulk GaAs.

  15. Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip

    NASA Astrophysics Data System (ADS)

    Li-Shu, Wu; Yan, Zhao; Hong-Chang, Shen; You-Tao, Zhang; Tang-Sheng, Chen

    2016-06-01

    In this work, we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of GaAs pseudomorphic high electron mobility transistors (pHEMTs) and Si complementary metal–oxide semiconductor (CMOS) on the same Silicon substrate. GaAs pHEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique, and the best alignment accuracy of 5 μm is obtained. As a circuit example, a wide band GaAs digital controlled switch is fabricated, which features the technologies of a digital control circuit in Si CMOS and a switch circuit in GaAs pHEMT, 15% smaller than the area of normal GaAs and Si CMOS circuits.

  16. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    SciTech Connect

    Zhang, Jingyun; Si, Mengwei; Wu, Heng; Ye, Peide D.; Lou, Xiabing; Gordon, Roy G.; Shao, Jiayi; Manfra, Michael J.

    2015-02-16

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

  17. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    NASA Astrophysics Data System (ADS)

    Zhang, Jingyun; Lou, Xiabing; Si, Mengwei; Wu, Heng; Shao, Jiayi; Manfra, Michael J.; Gordon, Roy G.; Ye, Peide D.

    2015-02-01

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La2O3 as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an ION/IOFF ratio of greater than 107.

  18. Epitaxial and polycrystalline GaAs solar cells using OM-CVD techniques

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.; Wang, K. L.; Shin, B. K.; Stirn, R. J.

    1980-01-01

    GaAs epitaxial films were grown by chemical vapor deposition using organo-metallic sources (OM-CVD) on single crystal and polycrystalline bulk GaAs, as well as on bulk polycrystalline and recrystallized thin-film Ge substrates. Details of Antireflecting Metal-Oxide-Semiconductor (AMOS) solar cells fabricated on GaAs films grown on bulk polycrystalline Ge and recrystallized Ge thin-film substrates will be discussed, as well as preliminary photovoltaic results obtained for n(+)/p homojunction structures.

  19. Sensor Detects Semiconductor Escaping From Ampoule

    NASA Technical Reports Server (NTRS)

    Watring, Dale A.; Johnson, Martin L.

    1994-01-01

    Electrical resistance and temperature change upon exposure to semiconductors. Sensor detects breakage of ampoule containing molten semiconductor. Chemical reaction between hot semiconductor material and wire causes step increase in electrical resistance and temperature of wire. Step increase in temperature and resistance of sensor indicates presence of hot GaAs. Sensor used to shut down furnace automatically if ampoule breaks and prevents further release of molton semiconductor, which could quickly breach surrounding thin wall of cartridge, damage furnace, and/or release toxic vapors into surrounding area.

  20. Semiconductor superlattice photodetectors

    NASA Technical Reports Server (NTRS)

    Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

    1984-01-01

    A superlattice photomultiplier and a photodetector based on the real space transfer mechanism were studied. The wavelength for the first device is of the order of a micron or flexible corresponding to the bandgap absorption in a semiconductor. The wavelength for the second device is in the micron range (about 2 to 12 microns) corresponding to the energy of the conduction band edge discontinuity between an Al/(sub x)Ga(sub 1-x)As and GaAs interface. Both devices are described.

  1. Composite Semiconductor Substrates

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar; Radhakrishnan, Gouri; Katz, Joseph; Koliwad, Kris

    1989-01-01

    Epitaxial structure of three semiconductor materials - silicon, gallium arsenide, and cadmium telluride - makes possible integrated monolithic focal-plane arrays of photodectors. Silicon layer contains charge-coupled devices, gallium arsenide layer contains other fast electronic circuitry, and cadmium telluride layer serves as base for array of mercury cadmium telluride infrared sensors. Technique effectively combines two well-established techniques; metalorganic chemical-vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). Multilayer structure includes HgCdTe light sensors with Si readout devices and GaAs signal-processing circuits. CdTe layer provides base for building up HgCdTe layer.

  2. Optical and photoelectric properties of anodic oxide films on GaAs, GaP, and GaAs/sub 0. 6/P/sub 0. 4/

    SciTech Connect

    Kashkarov, P.K.; Obraztsov, A.N.; Sorokin, I.N.; Sosnovskikh, Yu.N.

    1987-03-01

    The authors investigate the optical absorption spectra and the photoconductivities of anodic oxide film based on GaAs, GaP, and GaAs/sub 0.6/P/sub 0.4/ in the range of light energy quanta 2-6.2 eV. Anodic oxide film (AOF) was studied on the surface of single crystals of GaAs and epitaxial layers of p-type Gap and AsAs/sub 0.6/P/sub 0.4/ of the n-type. The structures of the oxides were monitored by electron diffraction. The photoconductivity of the AOF was investigated. The absorption of the AOF in the visible and near-UV ranges was estimated by comparing the spectra of excitation of photoluminescence at 80 K for specimens coated with an AOF and specimens with the AOF removed by etching in HCl.

  3. Giant persistent photoconductivity in rough silicon nanomembranes.

    PubMed

    Feng, Ping; Mönch, Ingolf; Harazim, Stefan; Huang, Gaoshan; Mei, Yongfeng; Schmidt, Oliver G

    2009-10-01

    This paper reports the observation of giant persistent photoconductivity from rough Si nanomembranes. When exposed to light, the current in p-type Si nanomembranes is enhanced by roughly 3 orders of magnitude in comparison with that in the dark and can persist for days at a high conductive state after the light is switched off. An applied gate voltage can tune the persistent photocurrent and accelerate the response to light. By analyzing the band structure of the devices and the surfaces through various coatings, we attribute the observed effect to hole-localized regions in Si nanomembranes due to the rough surfaces, where light can activate the confined holes. PMID:19637888

  4. Luminescence and photoconductivity in magnesium aluminum spinel

    NASA Astrophysics Data System (ADS)

    Bandyopadhyay, Pradip K.; Summers, G. P.

    1985-02-01

    Ultraviolet-light excitation of thermochemically reduced MgAl2O4 single crystals below room temperature produces a luminescence band with a peak at 2.69 eV. The excitation spectrum of the 2.69-eV band coincides with the broad F-center absorption band at 5.30 eV. The 2.69-eV band is also emitted in uv-stimulated glow peaks which occur at 95 and 265 K. A photoconductivity maximum is observed at 5.39 eV at temperatures above 160 K, but the band is readily bleached by uv light.

  5. Optical conductivity for liquid semiconductors

    NASA Astrophysics Data System (ADS)

    Jain, Manish; Ko, Eunjung; Derby, J. J.; Chelikowsky, James

    2002-03-01

    We present calculations for the optical conductivity of several semiconductor liquids: SiGe, GaAs, CdTe, and ZnTe. We perform ab initio molecular dynamics for these liquids. The required interatomic forces are determined using the pseudopotential density functional method. We determine the optical conductivity by considering ensemble averages of the liquid state within the Kubo-Greenwood formalism. In the liquid phase, CdTe and ZnTe exhibit properties that are different from III-V and group IV semiconductors. CdTe and ZnTe remain semiconducting unlike SiGe and GaAs, which are metallic in the melt. These differences in optical conductivities are explained in terms of differences in the microstructure of the liquids. We also verify an empirical rule by Joffe and Regel. Their rule predicts the liquid will remain semiconducting if the short range order of the melt resembles that of the crystalline phase.

  6. Semiconductor electrolyte photovoltaic energy converter

    NASA Technical Reports Server (NTRS)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  7. SEU design consideration for MESFETs on LT GaAs

    SciTech Connect

    Weatherford, T.R.; Radice, R.; Eskins, D.

    1997-12-01

    Computer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII{reg_sign} process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined.

  8. Epitaxial Fe on free-standing GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Mingze; Darbandi, Ali; Majumder, Sarmita; Watkins, Simon; Kavanagh, Karen

    2016-07-01

    Epitaxial Fe contacts have been fabricated onto the top half of free-standing, Te-doped GaAs nanowires (NWs) via electrodeposition. Electrical isolation from the substrate via a polymeric layer enabled the measurement of electrical transport through individual wires. Using a fixed probe within a scanning electron microscope, an average metal-semiconductor diode barrier height of 0.69 ± 0.03 eV (ideality factor 1.48 ± 0.02) was found.

  9. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  10. Quantum effects in electron beam pumped GaAs

    SciTech Connect

    Yahia, M. E.; Azzouz, I. M.; Moslem, W. M.

    2013-08-19

    Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

  11. Hybrid ferromagnetic-semiconductor structures

    SciTech Connect

    Prinz, G.A. )

    1990-11-23

    Ultrahigh-vacuum growth techniques are now being used to grow single-crystal films of magnetic materials. These growth procedures, carried out in the same molecular beam epitaxy systems commonly used for the growth of semiconductor films, have yielded a variety of new materials and structures that may prove useful for integrated electronics and integrated optical device applications. Examples are given for growth on GaAs and ZnSe, including magnetic sandwiches and patterned structures. 14 refs., 9 figs.

  12. Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H-SiC semiconductors under light illumination at cryogenic temperatures

    NASA Astrophysics Data System (ADS)

    Mouneyrac, David; Hartnett, John G.; Le Floch, Jean-Michel; Tobar, Michael E.; Cros, Dominique; Krupka, Jerzy

    2010-11-01

    We report on extremely sensitive measurements of changes in the microwave properties of high purity nonintentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide, and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors while they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semiconductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data.

  13. Doped semiconductors and other solar energy materials

    NASA Astrophysics Data System (ADS)

    Williamson, D. L.

    1988-02-01

    A review is presented of recent applications of Mössbauer spectroscopy that focus on determining the fate of doped impurities in semiconductors, primarily GaAs, Ga1-xAlxAs and Si. Other solar energy materials and processes which are discussed include amorphous Si∶H-based alloys, chalcopyrites, transparent conducting oxides, photochemical processing via semiconductor powders in electrolytes, mirror making, and plant photosynthesis.

  14. Optically Pumped NMR Studies of Mechanically Induced Strain in GaAs Films

    NASA Astrophysics Data System (ADS)

    Bowers, Clifford; Wood, Ryan; Tokarski, John, III; McCarthy, Lauren; Saha, Dipta; Stanton, Christopher; Moreno, Jesus

    2015-03-01

    We present a new methodology for measuring strain in semiconductor films based on optically pumped NMR (OPNMR). Single crystals of GaAs were epoxy bonded to Si wafers at 100 °C. The GaAs is then variably thinned by selective chemical etching. Upon cooling, biaxial tensile strains are induced in the GaAs films since the coefficient of thermal expansion in GaAs is different than in the Si support. OPNMR experiments were carried out at 6-10 K. The OPNMR spectra are selective to nuclei within a photon penetration depth from the surface. When mounted on a 0.635 mm thick Si support, the strain, which is proportional to the observed quadrupole splitting, is found to decrease with increasing thickness of the GaAs films and appears to approach a residual value. When the same GaAs film is mounted on a thicker 5mm Si block, the strain increased. To explain the observations, we consider effects of dislocation relaxation of strain and bending of the composite. The interface strain extracted from the measurements is 5.5 × 10-4, in good agreement with the value estimated using the differential thermal contraction of Si and GaAs. The strain resolution of the technique is about 10-5 in GaAs.

  15. Saturation and Polarization Characteristics of 1.56 μm Optical Probe Pulses in a LTG-GaAs Photoconductive Antenna Terahertz Detector

    NASA Astrophysics Data System (ADS)

    Estacio, Elmer S.; Hibi, Masakazu; Saito, Katsuya; Que, Christopher T.; Furuya, Takashi; Miyamaru, Fumiaki; Nishizawa, Seizi; Yamamoto, Kohji; Tani, Masahiko

    2013-08-01

    The characteristics of low temperature-grown GaAs photoconductive antenna (PCA) terahertz detectors probed by 1.56 μm laser pulses are investigated. The influence of TM and TE polarized probe, as well as the saturation characteristics are studied for 2 μm- and 5 μm-gap PCA's. Different polarization characteristics at low probe powers and at the saturation regimes were observed. Results are explained in terms of the polarization-dependent photocarrier distribution at the PCA gap arising from tight focusing. This work also demonstrates using a 1.56 μm probe for a GaAs PCA to achieve ~60 dB SNR; matching its performance characteristics for above-bandgap probes.

  16. Polarization dependent, surface plasmon induced photoconductance in gold nanorod arrays

    NASA Astrophysics Data System (ADS)

    Diefenbach, S.; Erhard, N.; Schopka, J.; Martin, A.; Karnetzky, C.; Iacopino, D.; Holleitner, A. W.

    2014-03-01

    We report on the photoconductance in two-dimensional arrays of gold nanorods which is strongly enhanced at the frequency of the longitudinal surface plasmon of the nanorods. The arrays are formed by a combination of droplet deposition and stamping of gold nanorod solutions on SiO2 substrates. We find that the plasmon induced photoconductance is sensitive to the linear polarization of the exciting photons. We interpret the occurrence of the photoconductance as a bolometric enhancement of the arrays' conductance upon excitation of the longitudinal surface plasmon resonance of the nanorods.

  17. Photoconductivities in MoS2 Nanoflake Photoconductors

    NASA Astrophysics Data System (ADS)

    Shen, Wei-Chu; Chen, Ruei-San; Huang, Ying-Sheng

    2016-03-01

    Photoconductivities in molybdenum disulfide (MoS2) layered nanostructures with two-hexagonal crystalline structure prepared by mechanical exfoliation were investigated. The photoconductor-type MoS2 nanoflakes exhibit remarkable photoresponse under the above bandgap excitation wavelength of 532 nm at different optical intensity. The photocurrent responsivity and photoconductive gain of nanoflakes can reach, respectively, 30 AW-1 and 103 at the intensity of 50 Wm-2, which are several orders of magnitude higher than those of their bulk counterparts. The vacuum-enhanced photocurrent and power-independent responsivity/gain indicate a surface-controlled photoconduction mechanism in the MoS2 nanomaterial.

  18. Persistent photoconductivity in high resistive Zn3P2

    NASA Astrophysics Data System (ADS)

    Sierański, K.; Szatkowski, J.; Pawlikowski, J. M.

    2014-02-01

    Resistivity and photoconductivity of p-type Zn3P2 polycrystals grown by closed tube vapour transport method have been investigated. Persistent photoconductivity (PPC) has been observed at temperatures T < 200 K. At 77 K, the photoconduction persists for over 103 s after termination of the light. The PPC buildup and decay kinetics have been measured at 77 K and analyzed in the frame of large lattice-relaxed deep levels. We have determined the spectral dependence for the optical cross section and obtain an optical ionization energy of 0.83 eV.

  19. Nanostructured donor-acceptor self assembly with improved photoconductivity.

    PubMed

    Saibal, B; Ashar, A Z; Devi, R Nandini; Narayan, K S; Asha, S K

    2014-11-12

    Nanostructured supramolecular donor-acceptor assemblies were formed when an unsymmetrical N-substituted pyridine functionalized perylenebisimide (UPBI-Py) was complexed with oligo(p-phenylenevinylene) (OPVM-OH) complementarily functionalized with hydroxyl unit and polymerizable methacrylamide unit at the two termini. The resulting supramolecular complex [UPBI-Py (OPVM-OH)]1.0 upon polymerization by irradiation in the presence of photoinitiator formed well-defined supramolecular polymeric nanostructures. Self-assembly studies using fluorescence emission from thin film samples showed that subtle structural changes occurred on the OPV donor moiety following polymerization. The 1:1 supramolecular complex showed red-shifted aggregate emission from both OPV (∼500 nm) and PBI (∼640 nm) units, whereas the OPV aggregate emission was replaced by intense monomeric emission (∼430 nm) upon polymerizing the methacrylamide units on the OPVM-OH. The bulk structure was studied using wide-angle X-ray diffraction (WXRD). Complex formation resulted in distinct changes in the cell parameters of OPVM-OH. In contrast, a physical mixture of 1 mol each of OPVM-OH and UPBI-Py prepared by mixing the powdered solid samples together showed only a combination of reflections from both parent molecules. Thin film morphology of the 1:1 molecular complex as well as the supramolecular polymer complex showed uniform lamellar structures in the domain range <10 nm. The donor-acceptor supramolecular complex [UPBI-Py (OPVM-OH)]1.0 exhibited space charge limited current (SCLC) with a bulk mobility estimate of an order of magnitude higher accompanied by a higher photoconductivity yield compared to the pristine UPBI-Py. This is a very versatile method to obtain spatially defined organization of n and p-type semiconductor materials based on suitably functionalized donor and acceptor molecules resulting in improved photocurrent response using self-assembly. PMID:25283356

  20. Guiding effect of quantum wells in semiconductor lasers

    SciTech Connect

    Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N

    2013-05-31

    The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)

  1. Picosecond photoconductivity of natural and CVD diamonds

    NASA Astrophysics Data System (ADS)

    Garnov, Serge V.; Pimenov, Sergej M.; Ralchenko, Victor G.; Klimentov, Sergei M.; Konov, Vitali I.; Korotoushenko, K. G.; Obraztsova, E. D.; Plotnikova, S. P.; Sagatelyan, D. M.; Holly, Sandor

    1995-07-01

    Photoexcitation and recombination of nonequilibrium charge carriers in both natural gemstone diamonds and CVD (chemical vapor deposition) polycrystalline diamond films in UV spectrum regions have been investigated. Transient picosecond photoconductivity technique applied permitted to conduct measurements with the time resolution better than 200 picoseconds and to register a charge carrier concentration value as low as 1020 - 1013 cm-3. The dependencies of photocurrent amplitude as a function of incident laser radiation intensity in the range from 103 to 1010 W/cm2 have been obtained. Charge carrier lifetimes had been measured and charge carrier drift mobility were estimated. It is shown that the electronic properties of high quality thick CVD diamond films are comparable to those of the most perfect natural type IIa crystals. Investigation of Raman and luminescence spectra of diamonds have been performed along with scanning electron microscopy studies to characterize bulk and surface structure of tested specimens.

  2. Spatially selective photoconductive stimulation of live neurons

    PubMed Central

    Campbell, Jacob; Singh, Dipika; Hollett, Geoffrey; Dravid, Shashank M.; Sailor, Michael J.; Arikkath, Jyothi

    2014-01-01

    Synaptic activity is intimately linked to neuronal structure and function. Stimulation of live cultured primary neurons, coupled with fluorescent indicator imaging, is a powerful technique to assess the impact of synaptic activity on neuronal protein trafficking and function. Current technology for neuronal stimulation in culture include chemical techniques or microelectrode or optogenetic based techniques. While technically powerful, chemical stimulation has limited spatial resolution and microelectrode and optogenetic techniques require specialized equipment and expertise. We report an optimized and improved technique for laser based photoconductive stimulation of live neurons using an inverted confocal microscope that overcomes these limitations. The advantages of this approach include its non-invasive nature and adaptability to temporal and spatial manipulation. We demonstrate that the technique can be manipulated to achieve spatially selective stimulation of live neurons. Coupled with live imaging of fluorescent indicators, this simple and efficient technique should allow for significant advances in neuronal cell biology. PMID:24904287

  3. 6H-SiC Photoconductive Switches Triggered at Below Bandgap Wavelengths

    SciTech Connect

    Sullivan, J S; Stanley, J R

    2007-02-13

    Semi-insulating silicon carbide (SiC) is an attractive material for application as high voltage, photoconductive semiconductor switches (PCSS) due to its large bandgap, high critical electric field strength, high electron saturation velocity and high thermal conductivity. The critical field strength of 300 MV/m for 6H-SiC makes it particularly attractive for compact, high voltage, fast switching applications. To realize the benefits of the high bulk electric field strength of SiC and diffuse switch current, carriers must be excited throughout the bulk of the photo switch. Photoconducting switches with opposing electrodes were fabricated on ''a'' plane, vanadium compensated, semiinsulating, 6H-SiC substrates. The PCSS devices were switched by optically exciting deep extrinsic levels lying within the 6H-SiC bandgap. The SiC photoswitches were tested up to a bias voltage of 11000 V with a corresponding peak current of 150 A. The 6H-SiC substrates withstood average electric fields up to 27 MV/m. Minimum PCCS dynamic resistances of 2 and 10 {Omega} were obtained with 13 mJ optical pulses at 532 and 1064 nm wavelengths, respectively.

  4. In situ studies of transient photoconductivity in PbSe quantum dot solar cells

    NASA Astrophysics Data System (ADS)

    Gao, Jianbo; Koh, Weon-Kyu; Makarov, Nikolay; Pietryga, Jeffrey; Klimov, Victor

    2014-03-01

    PbSe quantum dot (QD) solar cells have attracted significant interest due to their band gap tunability, easy-processing and flexibility. Efficiencies have risen from 1% just a few years ago to nearly 9% today. Furthermore, the novel concept of multiple exciton generation (MEG) resulting from quantum confinement makes these materials scientifically interesting counterparts to bulk semiconductors. Recent observations of more than 100% external quantum efficiency in PbSe QD solar cells confirm direct relevance of MEG to practical photovoltaics. However, in order to take full advantage of this effect, one needs a better understanding of photogeneration dynamics and carrier transport in QD solar cells. In this talk, we discuss a new technique for in situ measurements of transient photoconductivity with fast response time (<50 ps) applied to study carrier transport and photogeneration dynamics in PbSe QD solar cells. These measurements complement traditional photoconductivity techniques such as time-resolved microwave conductivity and time-of-flight. Based on the analysis of temperature, excitation wavelength and electrical field dependence measurements, we derive parameters such as MEG efficiency, carrier lifetime, trap-free mobility and carrier emission rate from trap states.

  5. Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures.

    PubMed

    Khalil, Hagir M; Royall, Ben; Mazzucato, Simone; Balkan, Naci

    2012-01-01

    The low temperature photoluminescence under bias (PLb) and the photoconductivity (PC) of a p-i-n GaInNAs/GaAs multiple quantum well sample have been investigated. Under optical excitation with photons of energy greater than the GaAs bandgap, PC and PLb results show a number of step-like increases when the sample is reverse biased. The nature of these steps, which depends upon the temperature, exciting wavelength and intensity and the number of quantum wells (QWs) in the device, is explained in terms of thermionic emission and negative charge accumulation due to the low confinement of holes in GaInNAs QWs. At high temperature, thermal escape from the wells becomes much more dominant and the steps smear out. PMID:23021540

  6. Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures

    PubMed Central

    2012-01-01

    The low temperature photoluminescence under bias (PLb) and the photoconductivity (PC) of a p-i-n GaInNAs/GaAs multiple quantum well sample have been investigated. Under optical excitation with photons of energy greater than the GaAs bandgap, PC and PLb results show a number of step-like increases when the sample is reverse biased. The nature of these steps, which depends upon the temperature, exciting wavelength and intensity and the number of quantum wells (QWs) in the device, is explained in terms of thermionic emission and negative charge accumulation due to the low confinement of holes in GaInNAs QWs. At high temperature, thermal escape from the wells becomes much more dominant and the steps smear out. PMID:23021540

  7. Effects of two-photon absorption on terahertz radiation generated by femtosecond-laser excited photoconductive antennas.

    PubMed

    Lee, Chao-Kuei; Yang, Chan-Shan; Lin, Sung-Hui; Huang, Shiuan-Hua; Wada, Osamu; Pan, Ci-Ling

    2011-11-21

    Terahertz (THz) radiation can be generated more efficiently from a low-temperature-grown GaAs (LT-GaAs) photoconductive (PC) antenna by considering the two-photon absorption (TPA) induced photo-carrier in the photoconductor. A rate-equation-based approach using the Drude-Lorentz model taking into account the band-diagram of LT-GaAs is used for the theoretical analysis. The use of transform-limited pulses at the PC antenna is critical experimentally. Previously unnoticed THz pulse features and anomalously increasing THz radiation power rather than saturation were observed. These are in good agreement with the theoretical predictions. The interplay of intensity dependence and dynamics of generation of photoexcited carriers by single-photon absorption and TPA for THz emission is discussed. PMID:22109395

  8. Photoconductivity and photoconversion at a photorefractive thin crystal plate

    NASA Astrophysics Data System (ADS)

    Frejlich, Jaime; de Oliveira, Ivan; de Araujo, William R.; Carvalho, Jesiel F.; Montenegro, Renata; Georges, Marc; Fleury-Frenette, Karl

    2016-05-01

    We report on the photoconductivity and the photoelectric conversion measured on a thin photorefractive sillenite crystal plate, between transparent electrodes, in the longitudinal configuration where the current is measured along the same direction of the light beam through the sample. Its behavior is based on the already reported light-induced Schottky effect. The wavelength for optimal photoconductivity is determined. A specific parameter is formulated here for quantitatively determining the photoelectric conversion efficiency of the sandwiched material.

  9. InP and GaAs characterization with variable stoichiometry obtained by molecular spray

    NASA Technical Reports Server (NTRS)

    Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

    1979-01-01

    Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

  10. The effect of annealing on the photoconductivity of carbon nanofiber/TiO2 core-shell nanowires for use in dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Rochford, Caitlin; Li, Zhuang-Zhi; Baca, Javier; Liu, Jianwei; Li, Jun; Wu, Judy

    2010-07-01

    Electrical transport properties and photoresponse of individual TiO2-coated carbon nanofibers were studied in an attempt to elucidate the limiting factors of core-shell nanowire-based dye-sensitized solar cells (DSSC). The role of the semiconductor shell microstructure was investigated by comparing as grown and thermally annealed samples. Steady state I-V and transient photoconductivity measurements suggest that improving the microstructure leads to reduced resistivity and contact resistance, a decrease in charge traps, improved surface stoichiometry for dye adsorption, and reduced absorption of visible light by the semiconductor, all of which may improve nanowire-based DSSC performance.

  11. High-power question - will diamonds be the next GaAs

    SciTech Connect

    Manz, B.

    1988-05-01

    It is shown that, due to the outstanding properties of diamond material, diamond technology offers much promise for microwave power generation. For example, diamond exhibits high dielectric breakdown voltage (10 to the 7th V, 50 times that of conventional semiconductors such as GaAs), high thermal conductivity (20 W/cm per C, which is about four times that of Cu), a low dielectric constant (5.5, half that of GaAs), and high saturated carrier velocity (2.7 times that of GaAs, Si, or InP). Moreover, unlike GaAs, Si, or InP, the saturated carrier velocity of diamond maintains its high rate in electric fields of increasing intensity. However, the process of growing pure thin-film material is still at experimental stages. The approaches used in growing diamond by the laboratories in the U.S, USSR, and Japan are discussed.

  12. Direct Observation of the E_ Resonant State in GaAs1-xBix

    SciTech Connect

    Alberi, Kirstin; Beaton, Daniel A.; Mascarenhas, Angelo

    2015-12-15

    Bismuth-derived resonant states with T2 symmetry are detected in the valence band of GaAs1-xBix using electromodulated reflectance. A doublet is located 42 meV below the valence band edge of GaAs that is split by local strain around isolated Bi impurity atoms. A transition associated with a singlet is also observed just above the GaAs spin orbit split-off band. These states move deeper into the valence band with increasing Bi concentration but at a much slower rate than the well-known giant upward movement of the valence band edge in GaAs1-xBix. Our results provide key new insights for clarifying the mechanisms by which isovalent impurities alter the bandstructure of the host semiconductor.

  13. Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime

    NASA Astrophysics Data System (ADS)

    Jena, B.; Pradhan, K. P.; Dash, S.; Mishra, G. P.; Sahu, P. K.; Mohapatra, S. K.

    2015-09-01

    In this work the sensitivity of process parameters like channel length (L), channel thickness (tSi), and gate work function (φM) on various performance metrics of an undoped cylindrical gate all around (GAA) metal-oxide-semiconductor field effect transistor (MOSFET) are systematically analyzed. Undoped GAA MOSFET is a radical invention as it introduces a new direction for transistor scaling. In conventional MOSFET, generally the channel doping concentration is very high to provide high on-state current, but in contrary it causes random dopant fluctuation and threshold voltage variation. So, the undoped nature of GAA MOSFET solves the above complications. Hence, we have analyzed the electrical characteristics as well as the analog/RF performances of undoped GAA MOSFET through Sentaurus device simulator.

  14. Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells

    SciTech Connect

    Rumyantsev, V. V. Ikonnikov, A. V.; Antonov, A. V.; Morozov, S. V.; Zholudev, M. S.; Spirin, K. E.; Gavrilenko, V. I.; Dvoretskii, S. A.; Mikhailov, N. N.

    2013-11-15

    The spectra and relaxation kinetics of interband photoconductivity are investigated in narrow-gap Hg{sub 1-x}Cd{sub x}Te epitaxial films with x = 0.19-0.23 and in structures with HgCdTe-based quantum wells (QWs), having an interband-transition energy in the range of 30-90 meV, grown by molecular-beam epitaxy on GaAs (013) substrates. A long-wavelength sensitivity band caused by impurities or defects is found in the spectra of the structures with quantum wells in addition to the interband photoconductivity. It is shown that the lifetimes of nonequilibrium carriers in the structures with QWs is less than in bulk samples at the same optical-transition energy. From the measured carrier lifetimes, the ampere-watt responsivity and the equivalent noise power for a film with x = 0.19 at a wavelength of 19 {mu}m are estimated. When investigating the relaxation kinetics of the photoconductivity at 4.2 K in high excitation regime, it is revealed that radiative recombination is dominant over other mechanisms of nonequilibrium-carrier recombination.

  15. Effects of ultrathin oxides in conducting MIS structures on GaAs

    NASA Technical Reports Server (NTRS)

    Childs, R. B.; Ruths, J. M.; Sullivan, T. E.; Fonash, S. J.

    1978-01-01

    Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

  16. Photoconductivity of composites based on CdSe quantum dots and low-band-gap polymers

    NASA Astrophysics Data System (ADS)

    Dayneko, Sergey; Linkov, Pavel; Martynov, Igor; Tameev, Alexey; Tedoradze, Marine; Samokhvalov, Pavel; Nabiev, Igor; Chistyakov, Alexander

    2016-05-01

    Photoconductivity of thin layers prepared by spin coating of blends of CdSe quantum dots (QDs) and a low-band-gap polymer PCDTBT or PTB7 has been studied. It has been found that photocurrent in the composites containing QDs of 10-nm in size is significantly higher than in those of containing 5-nm QDs. Analysis of the results showed that the photoresponse of the thin layers is mainly determined by the relative positions of the frontier energy levels of the materials used, organic semiconductors and QDs. Therefore, the ability to tune the relative positions of these levels by varying the QD size is of special importance, thus allowing the optimization of photodetectors and photovoltaic cells.

  17. Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts.

    PubMed

    Li, Liang; Auer, Erwin; Liao, Meiyong; Fang, Xiaosheng; Zhai, Tianyou; Gautam, Ujjal K; Lugstein, Alois; Koide, Yasuo; Bando, Yoshio; Golberg, Dmitri

    2011-03-01

    We designed solar-blind deep-ultraviolet semiconductor photodetectors using individual Ga2O3 nanobelts. The photoconductive behavior was systematically studied. The photodetectors demonstrate high selectivity towards 250 nm light, fast response times of less than 0.3 s, and a large photocurrent to dark current ratio of up to 4 orders of magnitude. The photoresponse parameters such as photocurrent, response time, and quantum efficiency depend strongly on the intensity of light, the detector environment, and the nanobelt size. The photoresponse mechanism was discussed, which was mainly attributed to the band bending, surface traps, and distribution of traps in the bandgap. Present Ga2O3 nanobelts can be exploited for future applications in photo sensing, light-emitting diodes, and optical switches. PMID:21203645

  18. A two-dimensional model for an in-plane organic photo-conductive bilayer sensor

    NASA Astrophysics Data System (ADS)

    Woestenborghs, W.; De Visschere, P.; Beunis, F.; Neyts, K.

    2014-09-01

    In this work we present a two-dimensional (2D) model for an organic thin film photo-conductive sensor containing a planar heterojunction and in-plane electrodes. The model simulates the flow of charge carriers based on the standard one-dimensional semiconductor transport and continuity equations, and combines this with a 2D model for the electric field. This procedure results in a hybrid differential/integral equation formulation. We present and analyse simulation results that resemble very well measured current-voltage characteristics of a real sensor under different illumination levels. We find that for currents below a critical value the sensor behaves like a resistor. Above this critical current the current increases much more slowly due to space charge accumulation close to the cathode. We explain the critical current as the maximum reverse current of the solar cell formed by the heterojunction covering the cathodic electrode.

  19. Sub-picosecond time-resolved carrier, phonon, and spin dynamics in Cd(Mn)Te diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, D.; Sobolewski, Roman; Mycielski, A.

    2005-08-01

    We present here our research on time-resolved carrier, phonon, and spin dynamics in the diluted-magnetic semiconductor Cd1-xMnxTe [Cd(Mn)Te] system. Our test samples were the high-quality single crystals with the Mn doping concentrations ranging from 9% to 12%, grown by a modified Bridgeman method. Femtosecond optical pump-probe spectroscopy experiments allowed us to study time-resolved dynamics of both the excited carriers and coherent acoustic phonons. Using pump photons with the energy just exceeding the Cd(Mn)Te energy gap, we observed the bleaching effect as excited carriers occupied essentially all available states at the bottom of the conduction band. With the increase of the pump photon energy, the normalized differential reflectivity (ΔR/R) signal changed sign to positive, being dominated by the electron-phonon relaxation process. All our ΔR/R traces, on the delay-time scale well above 100 ps, exhibited very regular oscillations, which were identified, as the signature of coherent acoustic phonons, generated by an electronic and thermal stress introduced at the sample surface by the pump photons. We have also excited our samples with sub-picosecond magnetic transients, generated by a low-temperature-grown GaAs photoconductive switch, and observed the sub-picosecond magneto-optic (Faraday) effect (Mn-ion spin dynamics). The sub-picosecond Faraday response makes this semimagnetic semiconductor an excellent candidate for practical applications in magneto-optics, such as in time-resolved magneto-optical sampling and imaging techniques, or in ultrafast magneto-optical transducers and modulators. In addition, Cd(Mn)Te is a very promising material for ultrafast spintronic and magnetic memory-type devices.

  20. Spin-Resolved Electronic Structure of Ultrathin Epitaxial Fe Films on Vicinal and Singular GaAs(100) Substrates

    SciTech Connect

    Morton, S A; Waddill, G D; Spangenberg, M; Seddon, E A; Neal, J; Shen, T; Tobin, J G

    2003-03-10

    Recently there has been considerable interest in the study of spin injection at ferromagnetic semiconductor heterojunctions and ferromagnetic metal--semiconductor contacts. Studies of ntype semiconductors have demonstrated spin-coherent transport over large distances5 and the persistence of spin coherence over a sizeable time scale. Clearly such investigations have been stimulated by the potential of the development of ''spintronics'', electronic devices utilizing the information of the electron spin states. To understand and improve the magnetic properties of ultrathin Fe films on GaAs has been the aim of many research groups over recent years. The interest in this system has both technological and fundamental scientific motivations. Technologically, Fe on GaAs may serve to realize spin electronic devices. From a fundamental science point of view, Fe on GaAs serves as a prototype for studies of the interplay between the crystalline structure and morphology of an ultrathin film, its electronic structure and the long range magnetic order it exhibits. Furthermore, it is well known that an oxidized Cs layer on GaAs substantially alters the work-function of the GaAs surface, which plays a very important role in the application of GaAs as a spin polarized electron source.

  1. GaAs arrays for X-ray spectroscopy

    NASA Astrophysics Data System (ADS)

    Owens, Alan; Andersson, Hans; Campbell, M.; Lumb, David H.; Nenonen, Seppo A. A.; Tlustos, Lukas

    2004-09-01

    We present results from our compound semiconductor laboratory program and describe the development of a large area GaAs imaging array for planetary remote sensing applications. The device is fabricated from ~150 micron thick epitaxial material, patterned into a 64 x 64 pixel array, back-thinned and contacted. It will be flip-chip bump bonded onto a custom designed, fully spectroscopic, low noise (< 20 e- rms) active pixel sensor ASIC. At present, the ASIC is still under development and so in order to validate and qualify the various technological steps, we have produced a GaAs imager based on the MEDIPIX-1 format using a MEDIPIX-1 readout chip. In X-ray tests, the device was found to work well with a bump yield of 99.9%. After flat field corrections, the spatial uniformity of the array was commensurate with Poisson noise.

  2. Cryogenic measurements of aerojet GaAs n-JFETs

    NASA Technical Reports Server (NTRS)

    Goebel, John H.; Weber, Theodore T.

    1993-01-01

    The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

  3. Oxygen-enhanced wet thermal oxidation of GaAs

    NASA Astrophysics Data System (ADS)

    Bauters, J. F.; Fenlon, R. E.; Seibert, C. S.; Yuan, W.; Plunkett, J. S. B.; Li, J.; Hall, D. C.

    2011-10-01

    An oxygen-enhanced wet thermal oxidation process is used to grow smooth, uniform, insulating native oxides of GaAs. At 420 °C, a maximum linear growth rate of 4.8 nm/min is observed for oxidation in water vapor with 2000 ppm O2 added relative to the N2 carrier gas, with growth ceasing by 7000 ppm. Films as thick as 800 nm with surface roughness as low as 0.2 nm are demonstrated. In fabricated metal-oxide-semiconductor capacitors, a 412 nm thick native oxide film exhibits a factor of ˜2700 reduction in leakage current density at 1 V relative to a direct metal (Au:Ti) to GaAs contact.

  4. Vectorial photocurrents and photoconductivity in metalized chloroplasts

    SciTech Connect

    Greenbaum, E. )

    1990-08-09

    A novel photobiophysical phenomenon was observed in isolated spinach chloroplasts that were metalized by precipitating colloidal platinum onto the surface of the thylakoid membranes. A two-point irradiation and detection system was constructed in which a continuous-beam helium-neon laser ({lambda} = 632.8 nm) was used to irradiate the platinized chloroplasts at varying perpendicular distances (Figure 1) from a single linear platinum electrode in pressure contact with the platinized chloroplasts. No external voltage bias was applied to the system. The key objective of the experiments reported in this report was to measure the relative photoconductivity of the chloroplast-metal composite matrix. Unlike conventional photosynthetic electrochemical cells, in which irradiated chloroplasts are in close proximity to an electrode or linked to the electrode by an electrode-active mediator, the flow of photocurrent was through the biocomposite material. A sustained steady-state vectorial flow of current in the plane of the entrapped composite from the point of laser irradiation to the wire electrode was measured.

  5. Preparations of methoxynitrophenazines and their photoconductivities

    NASA Technical Reports Server (NTRS)

    Sugimoto, A.; Inoue, K.; Inoue, H.; Imoto, E.

    1985-01-01

    Eight methoxynitrophenazines with a methoxy group at the 1 or 2 position and a nitro group at the 6-, 7-, 8- or 9-position of the phenazine ring 1,6, 1,7. 1,8, 1,9, 2,6, 2,7, 2,8 and 2,9 were prepared and their photocurrents were measured by illuminating the surface-type cell with white light from a W lamp under a N atmosphere at room temp. The photocurrents of 1-nitrophenazine 6 and 2-nitrophenazine 7 are compared with those of the methoxynitrophenazines. The photocurrent (i sub p) increases with increasing light intensity (I), thus satisfying log i varies as n log I. The n values are 0.5-1.0. When the nitro group is located at the beta-position of the phenazine ring, the photocurrent becomes larger owing to the electron withdrawing property of the nitro group. On the other hand, the photocurrents of phenazines with the nitro group at the Alpha-position are extremely small. The photoconductivities of methoxynitrophenazines are lower in air.

  6. Semiconductor switch geometry with electric field shaping

    DOEpatents

    Booth, Rex; Pocha, Michael D.

    1994-01-01

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  7. Semiconductor switch geometry with electric field shaping

    DOEpatents

    Booth, R.; Pocha, M.D.

    1994-08-23

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

  8. Carrier scattering by native defects in heavily doped semiconductors

    SciTech Connect

    Walukiewicz, W. Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA )

    1990-05-15

    Calculations of the effect of charged native defects on carrier mobility in semiconductors are presented. The concentrations of native defects are calculated within the framework of the recently proposed amphoteric-native-defect model. The model provides a simple rule for identification of semiconductor systems in which defect scattering is important. It is shown that native-defect scattering is a dominant mechanism limiting electron mobilities in heavily doped {ital n}-type GaAs. It is also shown that native defects do not play any significant role in {ital p}-type GaAs.

  9. Photoconductivity and density of states in microstructural amorphous silicon

    SciTech Connect

    Budaguan, B.G.; Aivazov, A.A.; Radosel'sky, A.G.; Popov, A.A.

    1997-07-01

    It has been reported in previous works that using of RF 55 kHz PECVD method allows to deposit microstructural inhomogeneous a-Si:H films at high deposition rate (10--20{angstrom}/c) and with high photoconductivity. The structural analysis with using of IR spectroscopy and atomic force microscopy (AFM) performed in this work have shown that these films possess a relatively regular microstructure consisting of grains with characteristic size of {approximately}300--500{angstrom}. The regular microstructure of investigated films differs from inhomogeneous a-Si:H with deteriorate electronic properties. At the same time the diffraction analysis didn't reveal the presence of microcrystals. Therefore, the authors denoted their films as microstructural a-Si:H films. In this work they performed the modeling of the photoconductivity of microstructural a-Si:H films to analyze the density-of-states (DOS) responsible for recombination kinetics. For this purpose different approaches to photoconductivity modeling have been used to simulate the experimentally measured temperature dependence of photoconductivity. The comparative analysis of results of these simulations and ESR measurements have shown that recombination in high photoconductive microstructural films is controlled by deep neutral states.

  10. GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

    SciTech Connect

    Juang, Bor-Chau Laghumavarapu, Ramesh B.; Foggo, Brandon J.; Lin, Andrew; Simmonds, Paul J.; Liang, Baolai; Huffaker, Diana L.

    2015-03-16

    There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAs substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.