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Sample records for gainp solar cells

  1. Influence of GaInP ordering on the performance of GaInP solar cells

    NASA Astrophysics Data System (ADS)

    Shuzhen, Yu; Jianrong, Dong; Yongming, Zhao; Yurun, Sun; Kuilong, Li; Xulu, Zeng; Hui, Yang

    2016-07-01

    CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room temperature and low-temperature photoluminescence (PL) spectra of AlGaInP/GaInP/AlGaInP double heterostructures (DHs) reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance. Project supported by the National Natural Science Foundation of China (No. 61376065) and the Suzhou Science and Technology Project (No. ZXG2013044).

  2. High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

    PubMed Central

    2011-01-01

    We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell. PMID:22040124

  3. ZnSe Window Layers for GaAs and GaInP2 Solar Cells

    NASA Technical Reports Server (NTRS)

    Olsen, Larry C.

    1997-01-01

    This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

  4. GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers

    SciTech Connect

    Simon, John; Schulte, Kevin L.; Young, David L.; Haegel, Nancy M.; Ptak, Aaron J.

    2016-01-01

    The high cost of high-efficiency III-V photovoltaic devices currently limits them to niche markets. Hydride vapor-phase epitaxy (HVPE) growth of III-V materials recently reemerged as a low-cost, high-throughput alternative to conventional metal- organic vapor-phase epitaxy (MOVPE) growth of high-efficiency solar cells. Previously, we demonstrated unpassivated HVPEgrown GaAs p-n junctions with good quantum efficiency and high open-circuit voltage (Voc). In this work, we demonstrate the growth of GaInPby HVPE for use as a high-quality surface passivation layer to GaAs solar cells. Solar cells grown with GaInP window layers show significantly improved quantum efficiency compared with unpassivated cells, increasing the short-circuit current (JSC) of these low-cost devices. These results show the potential of low-cost HVPE for the growth of high-quality III-V devices.

  5. Structural dependences of localization and recombination of photogenerated carriers in the top GaInP Subcells of GaInP/GaAs double-junction tandem solar cells.

    PubMed

    Deng, Zhuo; Ning, Jiqiang; Su, Zhicheng; Xu, Shijie; Xing, Zheng; Wang, Rongxin; Lu, Shulong; Dong, Jianrong; Zhang, Baoshun; Yang, Hui

    2015-01-14

    In high-efficiency GaInP/GaAs double-junction tandem solar cells, GaInP layers play a central role in determining the performance of the solar cells. Therefore, gaining a deeper understanding of the optoelectronic processes in GaInP layers is crucial for improving the energy conversion efficiency of GaInP-based photovoltaic devices. In this work, we firmly show strong dependences of localization and recombination of photogenerated carriers in the top GaInP subcells in the GaInP/GaAs double-junction tandem solar cells on the substrate misorientation angle with excitation intensity- and temperature-dependent photoluminescence (PL). The entire solar cell structures including GaInP layers were grown with metalorganic chemical vapor deposition on GaAs substrates with misorientation angles of 2° (denoted as Sample 2°) and 7° (Sample 7°) off (100) toward (111)B. The PL spectral features of the two top GaInP subcells, as well as their excitation-power and temperature dependences exhibit remarkable variation on the misorientation angle. In Sample 2°, the dominant localization mechanism and luminescence channels are due to the energy potential minima caused by highly ordered atomic domains; In Sample 7°, the main localization and radiative recombination of photogenerated carriers occur in the atomically disordered regions. Our results reveal a more precise picture on the localization and recombination mechanisms of photogenerated carriers in the top GaInP subcells, which could be the crucial factors in controlling the optoelectronic efficiency of the GaInP-based multijunction photovoltaic devices. PMID:25479245

  6. High performance, high bandgap, lattice-mismatched, GaInP solar cells

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.; Steiner, Myles A.

    2014-07-08

    High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.

  7. Effect on Sb on the Properties of GaInP Top Cells: Preprint

    SciTech Connect

    Olson, J. M.; McMahon, W. E.; Kurtz, S.

    2006-05-01

    It is well known that the efficiency of GaInP/GaAs tandem solar cells is limited by the band gap of the GaInP top cell, which, in turn, is determined by the degree of compositional ordering in GaInP base layer. Attempts to raise the band gap by the addition of Al to the top cell have met with limited success due to the strong affinity between Al and oxygen. Here we investigate a different approach. It has been shown that the presence of antimony on the surface of GaInP during its growth suppresses the ordering process and increases the band gap. In this paper, we study the effects of Sb on the properties of GaInP top cells. We show that, in addition to raising the band gap of GaInP, it also increases the incorporation of Zn and changes the relative incorporation of Ga and In. These effects depend strongly on the substrate orientation, growth temperature and rate, and the Sb/P ratio in the gas phase. We show that the band gap of the GaInP top cell (and the Voc) can be increased without reducing the minority carrier collection efficiency. The implications of these results are presented and discussed.

  8. Reduction of Crosshatch Roughness and Threading Dislocation Density in Metamorphic GaInP Buffers and GaInAs Solar Cells

    SciTech Connect

    France, R. M.; Geisz, J. F.; Steiner, M. A.; To, B.; Romero, M. J.; Olavarria, W. J.; King, R. R.

    2012-05-15

    Surface crosshatch roughness typically develops during the growth of lattice-mismatched compositionally graded buffers and can limit misfit dislocation glide. In this study, the crosshatch roughness during growth of a compressive GaInP/GaAs graded buffer is reduced by increasing the phosphine partial pressure throughout the metamorphic growth. Changes in the average misfit dislocation length are qualitatively determined by characterizing the threading defect density and residual strain. The decrease of crosshatch roughness leads to an increase in the average misfit dislocation glide length, indicating that the surface roughness is limiting dislocation glide. Growth rate is also analyzed as a method to reduce surface crosshatch roughness and increase glide length, but has a more complicated relationship with glide kinetics. Using knowledge gained from these experiments, high quality inverted GaInAs 1 eV solar cells are grown on a GaInP compositionally graded buffer with reduced roughness and threading dislocation density. The open circuit voltage is only 0.38 V lower than the bandgap potential at a short circuit current density of 15 mA/cm{sup 2}, suggesting that there is very little loss due to the lattice mismatch.

  9. ZnSe Window Layers for GaAs and GaInP2 Solar Cells

    NASA Technical Reports Server (NTRS)

    Olsen, Larry C.

    1995-01-01

    This report concerns studies of the use of ZnSe as a window layer for GaAs solar cells. Well-oriented crystalline ZnSe films on (100) single crystal GaAs substrates were grown by MOCVD. In particular, ZnSe films were grown by reacting a zinc adduct with hydrogen selenide at temperatures in the range of 200 C to 400 C. X-ray diffraction studies and images obtained with an atomic force microscope determined that the films were highly oriented but were polycrystalline. Particular emphasis was placed on the use of a substrate temperature of 350 C. Using iodine as a dopant, n-type ZnSe films with resistivities in the range of .01 to .05 ohm-cm were grown on semi-insulating GaAs. Thus procedures have been developed for investigating the utility of n-type ZnSe window layers on n/p GaAs structures. Studies of recombination at n-ZnSe/n-GaAs interfaces in n-ZnSe/n-GaAs/p-GaAs cell structures are planned for future work.

  10. Direct Comparison of Inverted and Non-Inverted Growths of GaInP Solar Cells: Preprint

    SciTech Connect

    Steiner, M. A.; Geisz, J. F.; Reedy Jr, R.C.; Kurtz, S.

    2008-05-01

    The inverted growth of III-V solar cells presents some specific challenges that are not present in regular, non-inverted growths. Because the highly doped top contact layer is grown first, followed by the lengthy high-temperature growth of the remainder of the structure, there is ample time for the dopants in the contact layer to diffuse away. This leads to an increase in the contact resistance to the top layer, and a corresponding drop in voltage. The diffusion of dopants in other layers is similarly altered with respect to the non-inverted configuration because of the change in growth sequence. We compare the dopant profiles of inverted and non-inverted structures by using secondary ion mass spectroscopy and correlate the results with the observed performance of the devices. We also describe a technique for growing a GaInAsN contact layer in the inverted configuration and show that it achieves a specific contact resistance comparable to what is normally observed in non-inverted cells.

  11. Absorption enhancement of GaInP nanowires by tailoring transparent shell thicknesses and its application in III-V nanowire/Si film two-junction solar cells.

    PubMed

    Li, Xinhua; Shi, Tongfei; Liu, Guangqiang; Wen, Long; Zhou, BuKang; Wang, Yuqi

    2015-09-21

    A non-absorbing transparent shell is proposed to be coated on the outer surface of the core photoactive GaInP nanowire array (NWA) of the III-V nanowire (NW)/Si film two-junction solar cell. Interestingly, the diluted (at the filling ratio of 0.25) GaInP NWA with core / transparent shell structure can absorb more light than that in bare denser (at the filling ratio of 0.5) NWA. This allows for less source material consumption during the fabrication of III-V NWA/Si film two-junction cell. Meanwhile, the condition of current matching between the top III-V NWA and Si film sub cell can be easily fulfilled by tailoring the coating thickness of the transparent coating. Beyond the advantages on light absorption, the surface passivation effects introduced by the addition of some transparent dielectric coatings can reduce the surface recombination rate at the top NWA sub cell surface. This facilitates the effective extraction of photo-generated carriers and enhances output stability of the top NWA sub cell. From electrical simulation, a power conversion efficiency of 29.9% can be obtained at the optimized coating geometry. PMID:26406728

  12. On-Sun Comparison of GaInP2/GaAs Tandem Cells with Top-Cell Thickness Varied

    SciTech Connect

    McMahon, W. E.; Emery, K. A.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2005-01-01

    This study compares the on-sun performance of a set of GaInP2/GaAs tandem cells with different GaInP2 top-cell thicknesses. Because high-efficiency III-V cells are best suited to concentrating photovoltaic (CPV) applications, the cells were mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for an ''air mass 1.5 global'' (AM 1.5G) or a ''low aerosol optical depth'' (Low AOD) spectrum perform the best, and (2) a simple device model using the measured direct spectra as an input gives the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

  13. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy

    SciTech Connect

    Masuda, T; Tomasulo, S; Lang, JR; Lee, ML

    2015-03-07

    We have investigated similar to 2.0 eV (AlxGa1-x)(0.51)In0.49P and similar to 1.9 eV Ga0.51In0.49P single junction solar cells grown on both on-axis and misoriented GaAs substrates by molecular beam epitaxy (MBE). Although lattice-matched (AlxGa1-x)(0.51)In0.49P solar cells are highly attractive for space and concentrator photovoltaics, there have been few reports on the MBE growth of such cells. In this work, we demonstrate open circuit voltages (V-oc) ranging from 1.29 to 1.30 V for Ga0.51In0.49P cells, and 1.35-1.37 V for (AlxGa1-x)(0.51)In0.49P cells. Growth on misoriented substrates enabled the bandgap-voltage offset (W-oc = E-g/q - V-oc) of Ga0.51In0.49P cells to decrease from similar to 575 mV to similar to 565 mV, while that of (AlxGa1-x)(0.51)In0.49P cells remained nearly constant at 620 mV. The constant Woc as a function of substrate offcut for (AlxGa1-x)(0.51)In0.49P implies greater losses from non-radiative recombination compared with the Ga0.51In0.49P devices. In addition to larger Woc values, the (AlxGa1-x)(0.51)In0.49P cells exhibited significantly lower internal quantum efficiency (IQE) values than Ga0.51In0.49P cells due to recombination at the emitter/window layer interface. A thin emitter design is experimentally shown to be highly effective in improving IQE, particularly at short wavelengths. Our work shows that with further optimization of both cell structure and growth conditions, MBE-grown (AlxGa1-x)(0.51)In0.49P will be a promising wide-bandgap candidate material for high-efficiency, lattice-matched multi-junction solar cells. (C) 2015 AIP Publishing LLC.

  14. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy

    SciTech Connect

    Masuda, Taizo Tomasulo, Stephanie; Lang, Jordan R.; Lee, Minjoo Larry

    2015-03-07

    We have investigated ∼2.0 eV (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P and ∼1.9 eV Ga{sub 0.51}In{sub 0.49}P single junction solar cells grown on both on-axis and misoriented GaAs substrates by molecular beam epitaxy (MBE). Although lattice-matched (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P solar cells are highly attractive for space and concentrator photovoltaics, there have been few reports on the MBE growth of such cells. In this work, we demonstrate open circuit voltages (V{sub oc}) ranging from 1.29 to 1.30 V for Ga{sub 0.51}In{sub 0.49}P cells, and 1.35–1.37 V for (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells. Growth on misoriented substrates enabled the bandgap-voltage offset (W{sub oc} = E{sub g}/q − V{sub oc}) of Ga{sub 0.51}In{sub 0.49}P cells to decrease from ∼575 mV to ∼565 mV, while that of (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells remained nearly constant at 620 mV. The constant W{sub oc} as a function of substrate offcut for (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P implies greater losses from non-radiative recombination compared with the Ga{sub 0.51}In{sub 0.49}P devices. In addition to larger W{sub oc} values, the (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells exhibited significantly lower internal quantum efficiency (IQE) values than Ga{sub 0.51}In{sub 0.49}P cells due to recombination at the emitter/window layer interface. A thin emitter design is experimentally shown to be highly effective in improving IQE, particularly at short wavelengths. Our work shows that with further optimization of both cell structure and growth conditions, MBE-grown (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P will be a promising wide-bandgap candidate material for high-efficiency, lattice-matched multi-junction solar cells.

  15. GaInP2/GaAs tandem cells for space applications

    NASA Technical Reports Server (NTRS)

    Olson, J. M.; Kurtz, S. R.; Kibbler, A. E.; Bertness, K. A.; Friedman, D. J.

    1991-01-01

    The monolithic, tunnel-junction-interconnected tandem combination of a GaInP2 top cell and a GaAs bottom cell has achieved a one-sun, AM1.5 efficiency of 27.3 percent. With proper design of the top cell, air mass zero (AM0) efficiencies greater than 25 percent are possible. A description and the advantages of this device for space applications are presented and discussed. The advantages include high-voltage, low-current, two-terminal operation for simple panel fabrication, and high conversion efficiency with low-temperature coefficient. Also, because the active regions of the device are Al-free, the growth of high efficiency devices is not affected by trace levels of O2 or H2O in the MOCVD growth system.

  16. Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy

    SciTech Connect

    Park, K. W.; Ravindran, Sooraj; Kang, S. J.; Hwang, H. Y.; Jho, Y. D.; Park, C. Y.; Jo, Y. R.; Kim, B. J.; Lee, Y. T.

    2014-07-28

    We report the enhancement of the minority carrier lifetime of GaInP with a lateral composition modulated (LCM) structure grown using molecular beam epitaxy (MBE). The structural and optical properties of the grown samples are studied by transmission electron microscopy and photoluminescence, which reveal the formation of vertically aligned bright and dark slabs corresponding to Ga-rich and In-rich GaInP regions, respectively, with good crystal quality. With the decrease of V/III ratio during LCM GaInP growth, it is seen that the band gap of LCM GaInP is reduced, while the PL intensity remains high and is comparable to that of bulk GaInP. We also investigate the minority carrier lifetime of LCM structures made with different flux ratios. It is found that the minority carrier lifetime of LCM GaInP is ∼37 times larger than that of bulk GaInP material, due to the spatial separation of electrons and holes by In-rich and Ga-rich regions of the LCM GaInP, respectively. We further demonstrate that the minority carrier lifetime of the grown LCM GaInP structures can easily be tuned by simply adjusting the V/III flux ratio during MBE growth, providing a simple yet powerful technique to tailor the electrical and optical properties at will. The exceptionally high carrier lifetime and the reduced band gap of LCM GaInP make them a highly attractive candidate for forming the top cell of multi-junction solar cells and can enhance their efficiency, and also make them suitable for other optoelectronics devices, such as photodetectors, where longer carrier lifetime is beneficial.

  17. TJ Solar Cell

    SciTech Connect

    Friedman, Daniel

    2009-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  18. The progress of large area GaInP2/GaAs/Ge triple junction cell development at Spectrolab

    SciTech Connect

    Chiang, P.K.; Krut, D.; Cavicchi, B.T.

    1995-10-01

    In this paper the authors report the successful fabrication of large area, monolithic triple junction, n on p, GaInP2/GaAs/Ge cells. The highest open circuit voltage and cell efficiency (cell area: 4.078 sq cm) were measured at 2.573 V and 23.3%, respectively, under 1 sun, AMO illumination. To the authors knowledge, this is the highest single crystal, monolithic, two terminal triple junction cell efficiency demonstrated. In addition, excellent uniformity across a 3 inch diameter Ge substrates has also been achieved. An average cell efficiency of 22.8% across the 3 inch diameter wafer has been measured. They have also successfully fabricated welded cell-interconnect-cover (CIC) assemblies using these triple junction devices. The highest CIC efficiency was 23.2% (bare cell efficiency was 23.3%). The average efficiency for 25 CICs was 21.8%, which is very comparable to the 22.0% average bare cell efficiency before they were fabricated into the CICs. Finally, the authors have measured temperature coefficient and 1 MeV electron irradiation data. These will be presented in the paper.

  19. The progress of large area GaInP2/GaAs/Ge triple junction cell development at Spectrolab

    NASA Technical Reports Server (NTRS)

    Chiang, P. K.; Krut, D.; Cavicchi, B. T.

    1995-01-01

    In this paper we report the successful fabrication of large area, monolithic triple junction, n on p, GaInP2/GaAs/Ge cells. The highest open circuit voltage and cell efficiency (cell area: 4.078 sq cm) were measured at 2.573 V and 23.3%, respectively, under 1 sun, AMO illumination. To our knowledge, this is the highest single crystal, monolithic, two terminal triple junction cell efficiency demonstrated. In addition, excellent uniformity across a 3 inch diameter Ge substrates has also been achieved. An average cell efficiency of 22.8% across the 3 inch diameter wafer has been measured. We have also successfully fabricated welded cell-interconnect-cover (CIC) assemblies using these triple junction devices. The highest CIC efficiency was 23.2% (bare cell efficiency was 23.3%). The average efficiency for 25 CICs was 21.8%, which is very comparable to the 22.0% average bare cell efficiency before they were fabricated into the CICs. Finally, we have measured temperature coefficient and 1 MeV electron irradiation data. These will be presented in the paper.

  20. Status of multijunction solar cells

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.; Chu, C. L.

    1996-01-01

    This paper describes Applied Solar's present activity on Multijunction (MJ) space cells. We have worked on a variety of MJ cells, both monolithic and mechanically stacked. In recent years, most effort has been directed to GaInP2/GaAs monolithic cells, grown on Ge substrates, and the status of this cell design will be reviewed here. MJ cells are in demand to provide satellite power because of the acceptance of the overwhelming importance of high efficiency to reduce the area, weight and cost of space PV power systems. The need for high efficiencies has already accelerated the production of GaAs/Ge cells, with efficiencies 18.5-19%. When users realized that MJ cells could provide higher efficiencies (from 22% to 26%) with only fractional increase in costs, the demand for production MJ cells increased rapidly. The main purpose of the work described is to transfer the MOCVD growth technology of MJ high efficiency cells to a production environment, providing all the space requirements of users.

  1. Numerical modeling of GaInP/GaAs monolithic tandem solar cells

    NASA Astrophysics Data System (ADS)

    Mahfoud, Abderrezak; Fathi, Mohamed; Belghachi, Abderrahmane; Djahli, Farid

    2016-07-01

    In this work, we present simulation of a monolithic tandem GaInP/GaAs solar cell made from a top GaInP cell and a bottom GaAs cell. For this purpose we used one dimensional simulation program tool called Solar Cell Capacitance Simulator in one Dimension (SCAPS-1D), the proposed methodology consists of simulating each cell separately. For enhanced electric characteristics of a tandem solar cell, the current-match condition between the top and bottom cells should be satisfied, which in turn requires careful design of the tandem parameters. To fulfill this condition, the top cell base thickness of (GaInP) is adjusted accordingly. The solar spectrum reaching the lower cell is computed by subtracting the top cell spectrum from the total solar spectrum. The optimal value of the short circuit current density corresponds to a top cell's base thickness of 0.7 μm; this results in an open circuit voltage of 2.397 V, a short circuit current density of 13.87 mA/cm2, an efficiency of 29.83 % and a fill factor of 89.74 % under the AM1.5G solar spectrum.

  2. Solar cells

    NASA Astrophysics Data System (ADS)

    Cuquel, A.; Roussel, M.

    The physical and electronic characteristics of solar cells are discussed in terms of space applications. The principles underlying the photovoltaic effect are reviewed, including an analytic model for predicting the performance of individual cells and arrays of cells. Attention is given to the effects of electromagnetic and ionizing radiation, micrometeors, thermal and mechanical stresses, pollution and degassing encountered in space. The responses of different types of solar cells to the various performance-degrading agents are examined, with emphasis on techniques for quality assurance in the manufacture and mounting of Si cells.

  3. Radiation Effects on Luminescent Coupling in III-V Solar Cells

    SciTech Connect

    Steiner, Myles A.; Lumb, Matthew P.; Hoheisel, Raymond; Geisz, John F.; France, Ryan M.; Scheiman, David; Walters, Robert J.; Jenkins, Phillip P.

    2015-06-14

    Advances in the architecture of GaInP solar cells have recently lead to ~21% conversion efficiencies under the global spectrum due to high radiative efficiencies, and the resulting strong luminescent coupling in GaInP/GaAs tandems has lead to record dual-junction efficiencies. The suitability of these newer GaInP cells to space applications has not been examined, however. Here we present a study to compare the radiation hardness of rear-heterojunction and more traditional GaInP junctions and the resulting luminescent coupling. Pairs of GaInP/GaAs tandem cells were irradiated with 1 MeV electrons at fluences up to 1015 e/cm2. The cells were thoroughly characterized, before and after irradiation, by measuring the quantum efficiency, IV characteristics, electroluminescence and luminescent coupling. We find the luminescent coupling to be unchanged below ~1013 e/cm2, and to decrease to zero by 1015 e/cm2. For all fluence levels, the rear heterojunction structure had a higher coupling constant than the front junction structure. Despite these advantages, the efficiency degraded at the same rate for both structures.

  4. NREL Spurred the Success of Multijunction Solar Cells (Fact Sheet)

    SciTech Connect

    Not Available

    2013-08-01

    Many scientists once believed that high-quality gallium indium phosphide (GaInP) alloys could not be grown for use as semiconductors because the alloys would separate. However, researchers at the National Renewable Energy Laboratory (NREL) thought differently, and they employed GaInP in a material combination that allowed the multijunction cell to flourish. The multijunction cell is now the workhorse that powers satellites and the catalyst for renewed interest in concentrator photovoltaic products.

  5. NREL Scientists Spurred the Success of Multijunction Solar Cells (Fact Sheet)

    SciTech Connect

    Not Available

    2012-09-01

    Before 1984, many scientists believed that high-quality gallium indium phosphide (GaInP) alloys could not be grown for use as semiconductors because the alloys would separate. One researcher at the Solar Energy Research Institute (SERI) thought differently. His name was Jerry Olson, and his innovative thinking changed solar history. Olson identified a material combination that allowed the multijunction cell to flourish. It is now the workhorse that powers satellites and the catalyst for renewed interest in concentrator photovoltaic (CPV) products.

  6. Solar cells

    NASA Astrophysics Data System (ADS)

    Treble, F. C.

    1980-11-01

    The history, state of the art, and future prospects of solar cells are reviewed. Solar cells are already competitive in a wide range of low-power applications, and during the 1980's they are expected to become cheaper to run than diesel or gasoline generators, the present mainstay of isolated communities. At this stage they will become attractive for water pumping, irrigation, and rural electrification, particularly in developing countries. With further cost reduction, they may be used to augment grid supplies in domestic, commercial, institutional, and industrial premises. Cost reduction to the stage where photovoltaics becomes economic for large-scale power generation in central stations depends on a technological breakthrough in the development of thin-film cells. DOE aims to reach this goal by 1990, so that by the end of the century about 20% of the estimated annual additions to their electrical generating capacity will be photovoltaic.

  7. Cross-Sectional Transport Imaging in a Multijunction Solar Cell

    SciTech Connect

    Haegel, Nancy M.; Ke, Chi-Wen; Taha, Hesham; Guthrey, Harvey; Fetzer, C. M.; King, Richard

    2015-06-14

    Combining highly localized electron-beam excitation at a point with the spatial resolution capability of optical near-field imaging, we have imaged carrier transport in a cross-sectioned multijunction (GaInP/GaInAs/Ge) solar cell. We image energy transport associated with carrier diffusion throughout the full width of the middle (GaInAs) cell and luminescent coupling from point excitation in the top cell GaInP to the middle cell. Supporting cathodoluminescence and near-field photoluminescence measurements demonstrate excitation-dependent Fermi level splitting effects that influence cross-sectioned spectroscopy results as well as transport limitations on the spatial resolution of cross-sectional measurements.

  8. Fill Factor as a Probe of Current-Matching for GaInP2/GaAs Tandem Cells in a Concentrator System During Outdoor Operation

    SciTech Connect

    McMahon, W. E.; Emery, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2008-01-01

    Designing a tandem solar cell for use in a concentrator system is challenging because: (a) the conditions are variable, so solar cells rarely operate under optimal conditions, and (b) the conditions are not controlled, so any design problems are difficult to characterize. Here, we show how the fill factor can be used as a diagnostic tool to either verify correct system design and operation or to help identify a problem. We give particular attention to the detection of spectral skewing by the concentrator optics, as this can reduce the performance of GaInP{sub 2}/GaAs tandem cells and is difficult to characterize. The conclusions are equally valid for GaInP{sub 2}/GaAs/Ge triple-junction cells.

  9. Development of Highly-Efficient GaInP/Si Tandem Solar Cells

    SciTech Connect

    Essig, Stephanie; Geisz, John F.; Steiner, Myles A.; Merkle, Agnes; Peibst, Robby; Schmidt, Jan; Brendel, Rolf; Ward, Scott; Friedman, Daniel J.; Stradins, Paul; Young, David L.

    2015-06-14

    Dual-junction solar cells consisting of rear-heterojunction GaInP top cells and back-junction, back-contacted crystalline Si bottom cells were fabricated and characterized. Our calculations show that theoretical efficiencies up to 38.9% can be achieved with Si-based tandem devices. In our experiments, the two subcells were fabricated separately and stacked with an index matching fluid. In contrast to conventional mechanically stacked solar cells, that contain two metal grids at the interface, our concept includes a fully back contacted bottom cell which reduces the shadow losses in the device. A 1-sun AM1.5g cumulative efficiency of (26.2 +/- 0.6)% has been achieved with this novel GaInP/Si 4-terminal tandem solar cell.

  10. Progress towards a 30% efficient GaInP/Si tandem solar cells

    SciTech Connect

    Essig, Stephanie; Ward, Scott; Steiner, Myles A.; Friedman, Daniel J.; Geisz, John F.; Stradins, Paul; Young, David L.

    2015-08-28

    The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9 eV to a standard silicon solar cell enables efficiencies over 38%. Currently, top junctions of GaInP (1.8 eV) are the most promising as they can achieve 1-sun efficiencies of 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27% under AM1.5 g spectral conditions. Furthermore, higher efficiencies can be achieved by using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.

  11. Progress towards a 30% efficient GaInP/Si tandem solar cells

    DOE PAGESBeta

    Essig, Stephanie; Ward, Scott; Steiner, Myles A.; Friedman, Daniel J.; Geisz, John F.; Stradins, Paul; Young, David L.

    2015-08-28

    The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9 eV to a standard silicon solar cell enables efficiencies over 38%. Currently, top junctions of GaInP (1.8 eV) are the most promising as they can achieve 1-sun efficiencies of 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27% under AM1.5 g spectral conditions. Furthermore, higher efficiencies can be achieved bymore » using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.« less

  12. New approaches for high-efficiency solar cells. Final report

    SciTech Connect

    Bedair, S M; El-Masry, N A

    1997-12-01

    This report summarizes the activities carried out in this subcontract. These activities cover, first the atomic layer epitaxy (ALE) growth of GaAs, AlGaAs and InGaP at fairly low growth temperatures. This was followed by using ALE to achieve high levels of doping both n-type and p-type required for tunnel junctions (Tj) in the cascade solar cell structures. Then the authors studied the properties of AlGaAs/InGaP and AlGaAs/GaAs tunnel junctions and their performances at different growth conditions. This is followed by the use of these tunnel junctions in stacked solar cell structures. The effect of these tunnel junctions on the performance of stacked solar cells was studied at different temperatures and different solar fluences. Finally, the authors studied the effect of different types of black surface fields (BSF), both p/n and n/p GaInP solar cell structures, and their potential for window layer applications. Parts of these activities were carried in close cooperation with Dr. Mike Timmons of the Research Triangle Institute.

  13. High efficiency, radiation-hard solar cells

    SciTech Connect

    Ager III, J.W.; Walukiewicz, W.

    2004-10-22

    The direct gap of the In{sub 1-x}Ga{sub x}N alloy system extends continuously from InN (0.7 eV, in the near IR) to GaN (3.4 eV, in the mid-ultraviolet). This opens the intriguing possibility of using this single ternary alloy system in single or multi-junction (MJ) solar cells of the type used for space-based surveillance satellites. To evaluate the suitability of In{sub 1-x}Ga{sub x}N as a material for space applications, high quality thin films were grown with molecular beam epitaxy and extensive damage testing with electron, proton, and alpha particle radiation was performed. Using the room temperature photoluminescence intensity as a indirect measure of minority carrier lifetime, it is shown that In{sub 1-x}Ga{sub x}N retains its optoelectronic properties at radiation damage doses at least 2 orders of magnitude higher than the damage thresholds of the materials (GaAs and GaInP) currently used in high efficiency MJ cells. This indicates that the In{sub 1-x}Ga{sub x}N is well-suited for the future development of ultra radiation-hard optoelectronics. Critical issues affecting development of solar cells using this material system were addressed. The presence of an electron-rich surface layer in InN and In{sub 1-x}Ga{sub x}N (0 < x < 0.63) was investigated; it was shown that this is a less significant effect at large x. Evidence of p-type activity below the surface in Mg-doped InN was obtained; this is a significant step toward achieving photovoltaic action and, ultimately, a solar cell using this material.

  14. Progress in the Multijunction Solar Cell Mantech Program

    NASA Technical Reports Server (NTRS)

    Keener, David N.; Marvin, Dean; Brinker, David J.; Curtis, Henry B.

    2004-01-01

    In September, 1995, the joint Wright Laboratory/Phillips Laboratory/NASA Lewis Multijunction Solar Cell Manufacturing Technology (ManTech) Program began to improve multijunction cell performance and scale them up to production size and quantity to support Air Force and commercial satellite programs. The first milestone of the program has been reached and the purpose of this paper is to present the results of the program so far. The objectives of the Multijunction Solar Cell ManTech Program are to increase the GaInP2/GaAs/Ge lot average cell efficiency to 24-26%, increase the cell size to > or equal to 16 sq cm while maintaining high efficiency, and limit the per cell costs to < or equal to 1.15X state of the art GaAs/Ge cells. Advanced manufacturing technology and process control techniques such as in-situ process monitoring and real time process feedback are being used to optimize multijunction solar cell growth processes to achieve these goals. This paper will discuss progress made in Phase I of the program and give an overview of Phase II but will focus on side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase I deliverable cells from both vendors. Cell performance, pre- and post radiation, and temperature coefficient results on initial production multijunction solar cells will be presented and discussed. The data shows that this technology meets the objectives of the program, and that, in the interim before a new solar simulation standard becomes widely available, the measurement techniques being used by the major space solar cell manufacturers are providing adequate testing results for solar array design.

  15. Space Solar Cell Research and Development Projects at Emcore Photovoltaics

    NASA Technical Reports Server (NTRS)

    Sharps, Paul; Aiken,Dan; Stan, Mark; Cornfeld, Art; Newman, Fred; Endicter, Scott; Girard, Gerald; Doman, John; Turner, Michele; Sandoval, Annette; Fatemi, Navid

    2007-01-01

    The GaInP2/InGaAs/Ge triple junction device lattice matched to germanium has achieved the highest power conversion efficiency and the most commercial success for space applications [1]. What are the practical performance limits of this technology? In this paper we will describe what we consider to be the practical performance limits of the lattice matched GaInP2/InGaAs/Ge triple junction cell. In addition, we discuss the options for next generation space cell performance.

  16. Moth eye antireflection coated GaInP/GaAs/GaInNAs solar cell

    NASA Astrophysics Data System (ADS)

    Aho, Arto; Tommila, Juha; Tukiainen, Antti; Polojärvi, Ville; Niemi, Tapio; Guina, Mircea

    2014-09-01

    The performance of a GaInP/GaAs/GaInNAs solar cell incorporating AlInP moth eye antireflection coating is reported and compared with the performance of a similar cell comprising TiO2/SiO2 antireflection coating. The moth eye coating exhibits an average reflectance of only 2% within the spectral range from 400 nm to 1600 nm. EQE measurements revealed absorption-related losses in the AlInP moth eye coating at wavelengths below 510 nm. Short wavelength absorption decreases the current generation in the top GaInP junction by 10%. Despite the absorption losses, the moth eye patterned GaInP/GaAs/GaInNAs solar cell exhibited higher current generation under AM1.5G real sun illumination.

  17. Indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, Irving

    1991-01-01

    The direction for InP solar cell research; reduction of cell cost; increase of cell efficiency; measurements needed to better understand cell performance; n/p versus p/n; radiation effects; major problems in cell contacting; and whether the present level of InP solar cell research in the USA should be maintained, decreased, or increased were considered.

  18. Solar Photovoltaic Cells.

    ERIC Educational Resources Information Center

    Mickey, Charles D.

    1981-01-01

    Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

  19. Profiling the Built-in Electrical Potential in III-V Multijunction Solar Cells: Preprint

    SciTech Connect

    Jiang, C.-S.; Friedman, D. J.; Moutinho, H. R.; Al-Jassim, M. M.

    2006-05-01

    We report on a direct measurement of the electrical potential on cross-sections of GaInP2/GaAs multiple-junction solar cells by using an ultrahigh-vacuum scanning Kelvin probe microscope (UHV-SKPM). The UHV-SKPM allows us to measure the potential without air molecules being adsorbed on the cross-sectional surface. Moreover, it uses a GaAs laser with photon energy of 1.4 eV for the atomic force microscope (AFM) operation. This eliminated the light-absorption-induced bottom-junction flattening and top-junction enhancement, which happened in our previous potential measurement using a 1.85-eV laser for the AFM operation. Three potentials were measured at the top, tunneling, and bottom junctions. Values of the potentials are smaller than the potentials in the bulk. This indicates that the Fermi level on the UHV-cleaved (110) surface was pinned, presumably due to defects upon cleaving. We also observed higher potentials at atomic steps than on the terraces for both GaInP2 epitaxial layer and GaAs substrate. Combining scanning tunneling microscopy (STM) and SKPM measurements, we found that the potential height at steps of the GaAs substrate depends on the step direction, which is probably a direct result of unbalanced cations and anions at the steps.

  20. Photovoltaic solar cell

    DOEpatents

    Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat; Watts, Michael R.

    2015-09-08

    A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

  1. Solar cell device

    SciTech Connect

    Nishiura, M.; Haruki, H.; Miyagi, M.; Sakai, H.; Uchida, Y.

    1984-06-26

    A solar cell array is equipped with serially or parallel connected reverse polarity diodes formed simultaneously with the array. The diodes are constituted by one or more solar cells of the array which may be shaded to prevent photoelectric conversion, and which are electrically connected in reverse polarity with respect to the remaining cells.

  2. Solar cell encapsulation

    NASA Technical Reports Server (NTRS)

    Gupta, Amitava (Inventor); Ingham, John D. (Inventor); Yavrouian, Andre H. (Inventor)

    1983-01-01

    A polymer syrup for encapsulating solar cell assemblies. The syrup includes uncrosslinked poly(n-butyl)acrylate dissolved in n-butyl acrylate monomer. Preparation of the poly(n-butyl)acrylate and preparation of the polymer syrup is disclosed. Methods for applying the polymer syrup to solar cell assemblies as an encapsulating pottant are described. Also included is a method for solar cell construction utilizing the polymer syrup as a dual purpose adhesive and encapsulating material.

  3. Heterojunction solar cell

    DOEpatents

    Olson, Jerry M.

    1994-01-01

    A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.

  4. Heterojunction solar cell

    DOEpatents

    Olson, J.M.

    1994-08-30

    A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.

  5. Solar cell shingle

    NASA Technical Reports Server (NTRS)

    Forestieri, A. F.; Ratajczak, A. F.; Sidorak, L. G. (Inventor)

    1977-01-01

    A solar cell shingle was made of an array of solar cells on a lower portion of a substantially rectangular shingle substrate made of fiberglass cloth or the like. The solar cells may be encapsulated in flourinated ethylene propylene or some other weatherproof translucent or transparent encapsulant to form a combined electrical module and a roof shingle. The interconnected solar cells were connected to connectors at the edge of the substrate through a connection to a common electrical bus or busses. An overlap area was arranged to receive the overlap of a cooperating similar shingle so that the cell portion of the cooperating shingle may overlie the overlap area of the roof shingle. Accordingly, the same shingle serves the double function of an ordinary roof shingle which may be applied in the usual way and an array of cooperating solar cells from which electrical energy may be collected.

  6. The Angular Performance Behavior Of Triple Junction Solar Cells With Different Antireflection Coatings For High Temperature Space Missions

    NASA Astrophysics Data System (ADS)

    Hulsheger, Tim; Brandt, Christian; Caon, Antonio; Fiebrich, Horst K.; Andreev, Thomas

    2011-10-01

    The angular behavior of GaInP2/GaAs/Ge triple junction solar cells is studied from 0° up to 86°. Angle dependent short circuit currents of cells with antireflection coatings such as TiO2/Al2O3 and Al2O3 are compared to results of uncoated cells. Performance benefits from each coating are measured before and after cover glass coverage. Related temperature effects are predicted taking into account measured absorption coefficients in order to address on the coating of choice for high temperature solar generators. The influence of the sun light intensities from 1 AM0 to 8 AM0 is put in relation with basic semiconductor properties.

  7. AC solar cell

    SciTech Connect

    Schutten, H.P.; Benjamin, J.A.; Lade, R.W.

    1986-03-18

    An AC solar cell is described comprising: a pair of PN junction type solar cells connected in antiparallel between a pair of main terminals; and means for electrically directing light alternatingly without mechanical movement on the PN junctions to generate an alternating potential across the main terminals.

  8. Heterostructure solar cells

    NASA Technical Reports Server (NTRS)

    Chang, K. I.; Yeh, Y. C. M.; Iles, P. A.; Morris, R. K.

    1987-01-01

    The performance of gallium arsenide solar cells grown on Ge substrates is discussed. In some cases the substrate was thinned to reduce overall cell weight with good ruggedness. The conversion efficiency of 2 by 2 cm cells under AMO reached 17.1 percent with a cell thickness of 6 mils. The work described forms the basis for future cascade cell structures, where similar interconnecting problems between the top cell and the bottom cell must be solved. Applications of the GaAs/Ge solar cell in space and the expected payoffs are discussed.

  9. Solar cell radiation handbook

    NASA Technical Reports Server (NTRS)

    Tada, H. Y.; Carter, J. R., Jr.

    1977-01-01

    Solar cell theory cells are manufactured, and how they are modeled mathematically is reviewed. The interaction of energetic charged particle radiation with solar cells is discussed in detail and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Finally, an extensive body of data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence is presented.

  10. Enhanced-Depletion-Width GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy

    SciTech Connect

    Ptak, A. J.; Friedman, D. J.

    2005-01-01

    The 3-junction, GaInP2/GaAs/Ge solar cell is a non-optimized structure due to excess light falling on the Ge junction. Because of this, a fourth junction inserted between the GaAs and Ge subcells could use the excess light and provide an increase in device efficiency. Unfortunately, the leading candidate material, GaInNAs, suffers from very low minority-carrier diffusion lengths compared to its parent compound, GaAs. These low diffusion lengths do not allow for the collection of adequate current to keep the overall 4-junction structure current matched. If the currents generated from the GaInNAs subcell are increased, the possibility exists for practical efficiencies of greater than 40% from this structure.

  11. Solar cell activation system

    SciTech Connect

    Apelian, L.

    1983-07-05

    A system for activating solar cells involves the use of phosphorescent paint, the light from which is amplified by a thin magnifying lens and used to activate solar cells. In a typical system, a member painted with phosphorescent paint is mounted adjacent a thin magnifying lens which focuses the light on a predetermined array of sensitive cells such as selenium, cadmium or silicon, mounted on a plastic board. A one-sided mirror is mounted adjacent the cells to reflect the light back onto said cells for purposes of further intensification. The cells may be coupled to rechargeable batteries or used to directly power a small radio or watch.

  12. Dye Sensitized Solar Cells

    PubMed Central

    Wei, Di

    2010-01-01

    Dye sensitized solar cell (DSSC) is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO2, ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed. PMID:20480003

  13. Dye sensitized solar cells.

    PubMed

    Wei, Di

    2010-01-01

    Dye sensitized solar cell (DSSC) is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO(2), ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed. PMID:20480003

  14. Solar cell radiation handbook

    SciTech Connect

    Tada, H.Y.; Carter, J.R. Jr.; Anspaugh, B.E.

    1982-11-01

    The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.

  15. Solar cell radiation handbook

    NASA Technical Reports Server (NTRS)

    Tada, H. Y.; Carter, J. R., Jr.; Anspaugh, B. E.; Downing, R. G.

    1982-01-01

    The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.

  16. Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?

    PubMed

    Su, Z C; Ning, J Q; Deng, Z; Wang, X H; Xu, S J; Wang, R X; Lu, S L; Dong, J R; Yang, H

    2016-04-01

    Anderson localization is a predominant phenomenon in condensed matter and materials physics. In fact, localized and delocalized states often co-exist in one material. They are separated by a boundary called the mobility edge. Mott transition may take place between these two regimes. However, it is widely recognized that an apparent demonstration of Anderson localization or Mott transition is a challenging task. In this article, we present a direct optical observation of a transition of radiative recombination dominant channels from delocalized (i.e., local extended) states to Anderson localized states in the GaInP base layer of a GaInP/GaAs single junction solar cell by the means of the variable-temperature electroluminescence (EL) technique. It is found that by increasing temperature, we can boost a remarkable transition of radiative recombination dominant channels from the delocalized states to the localized states. The delocalized states are induced by the local atomic ordering domains (InP/GaP monolayer superlattices) while the localized states are caused by random distribution of indium (gallium) content. The efficient transfer and thermal redistribution of carriers between the two kinds of electronic states was revealed to result in both a distinct EL mechanism transition and an electrical resistance evolution with temperature. Our study gives rise to a self-consistent precise picture for carrier localization and transfer in a GaInP alloy, which is an extremely technologically important energy material for fabricating high-efficiency photovoltaic devices. PMID:26960547

  17. Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?

    NASA Astrophysics Data System (ADS)

    Su, Z. C.; Ning, J. Q.; Deng, Z.; Wang, X. H.; Xu, S. J.; Wang, R. X.; Lu, S. L.; Dong, J. R.; Yang, H.

    2016-03-01

    Anderson localization is a predominant phenomenon in condensed matter and materials physics. In fact, localized and delocalized states often co-exist in one material. They are separated by a boundary called the mobility edge. Mott transition may take place between these two regimes. However, it is widely recognized that an apparent demonstration of Anderson localization or Mott transition is a challenging task. In this article, we present a direct optical observation of a transition of radiative recombination dominant channels from delocalized (i.e., local extended) states to Anderson localized states in the GaInP base layer of a GaInP/GaAs single junction solar cell by the means of the variable-temperature electroluminescence (EL) technique. It is found that by increasing temperature, we can boost a remarkable transition of radiative recombination dominant channels from the delocalized states to the localized states. The delocalized states are induced by the local atomic ordering domains (InP/GaP monolayer superlattices) while the localized states are caused by random distribution of indium (gallium) content. The efficient transfer and thermal redistribution of carriers between the two kinds of electronic states was revealed to result in both a distinct EL mechanism transition and an electrical resistance evolution with temperature. Our study gives rise to a self-consistent precise picture for carrier localization and transfer in a GaInP alloy, which is an extremely technologically important energy material for fabricating high-efficiency photovoltaic devices.

  18. Photovoltaic solar cell

    DOEpatents

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2013-11-26

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  19. Photovoltaic solar cell

    DOEpatents

    Nielson, Gregory N; Cruz-Campa, Jose Luis; Okandan, Murat; Resnick, Paul J

    2014-05-20

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electricity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  20. Solar cell array interconnects

    DOEpatents

    Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

    1995-11-14

    Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

  1. Solar cell array interconnects

    DOEpatents

    Carey, Paul G.; Thompson, Jesse B.; Colella, Nicolas J.; Williams, Kenneth A.

    1995-01-01

    Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

  2. Nanocrystal Solar Cells

    SciTech Connect

    Gur, Ilan

    2006-12-15

    This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

  3. Thin silicon solar cells

    SciTech Connect

    Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  4. Lightweight solar cell

    SciTech Connect

    Hotaling, S.P.

    1993-06-22

    A lightweight solar cell is described comprising: (a) an LD aerogel substrate having a density of between 10-1,000 mg/cc, the surface of the substrate being polished (b) a dielectric planarization layer being applied to the polished surface, and (c) at least one layer of PV material deposited thereon. The solar cell having a plurality of PV layers deposited on the planarization layer.

  5. Photoelectrochemical Solar Cells.

    ERIC Educational Resources Information Center

    McDevitt, John T.

    1984-01-01

    This introduction to photoelectrochemical (PEC) cells reviews topics pertaining to solar energy conversion and demonstrates the ease with which a working PEC cell can be prepared with n-type silicon as the photoanode and a platinum counter electrode (both immersed in ethanolic ferrocene/ferricenium solutions). Experiments using the cell are…

  6. Sliver solar cells

    NASA Astrophysics Data System (ADS)

    Franklin, Evan; Blakers, Andrew; Everett, Vernie; Weber, Klaus

    2007-12-01

    Sliver solar cells are thin, mono-crystalline silicon solar cells, fabricated using micro-machining techniques combined with standard solar cell fabrication technology. Sliver solar modules can be efficient, low cost, bifacial, transparent, flexible, shadow-tolerant, and lightweight. Sliver modules require only 5 to 10% of the pure silicon and less than 5% of the wafer starts per MW p of factory output when compared with conventional photovoltaic modules. At ANU, we have produced 20% efficient Sliver solar cells using a robust, optimised cell fabrication process described in this paper. We have devised a rapid, reliable and simple method for extracting Sliver cells from a Sliver wafer, and methods for assembling modularised Sliver cell sub-modules. The method for forming these Sliver sub-modules, along with a low-cost method for rapidly forming reliable electrical interconnections, are presented. Using the sub-module approach, we describe low-cost methods for assembling and encapsulating Sliver cells into a range of module designs.

  7. Screening of solar cells

    NASA Technical Reports Server (NTRS)

    Appelbaum, J.; Chait, A.; Thompson, D. A.

    1993-01-01

    Because solar cells in a production batch are not identical, screening is performed to obtain similar cells for aggregation into arrays. A common technique for screening is based on a single operating point of the I-V characteristic of the cell, usually the maximum power point. As a result, inferior cell matching may occur at the actual operating points. Screening solar cells based on the entire I-V characteristic will inherently result in more similar cells in the array. An array consisting of more similar cells is likely to have better overall characteristics and more predictable performance. Solar cell screening methods and cell ranking are discussed. The concept of a mean cell is defined as a cell 'best' representing all the cells in the production batch. The screening and ranking of all cells are performed with respect to the mean cell. The comparative results of different screening methods are illustrated on a batch of 50 silicon cells of the Space Station Freedom.

  8. Screening of solar cells

    SciTech Connect

    Appelbaum, J.; Chait, A.; Thompson, D.A.

    1993-07-01

    Because solar cells in a production batch are not identical, screening is performed to obtain similar cells for aggregation into arrays. A common technique for screening is based on a single operating point of the I-V characteristic of the cell, usually the maximum power point. As a result, inferior cell matching may occur at the actual operating points. Screening solar cells based on the entire I-V characteristic will inherently result in more similar cells in the array. An array consisting of more similar cells is likely to have better overall characteristics and more predictable performance. Solar cell screening methods and cell ranking are discussed. The concept of a mean cell is defined as a cell 'best' representing all the cells in the production batch. The screening and ranking of all cells are performed with respect to the mean cell. The comparative results of different screening methods are illustrated on a batch of 50 silicon cells of the Space Station Freedom.

  9. Broad spectrum solar cell

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man; Wu, Junqiao; Schaff, William J.

    2007-05-15

    An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In.sub.1-xGa.sub.xN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.

  10. Parameterization of solar cells

    NASA Astrophysics Data System (ADS)

    Appelbaum, J.; Chait, A.; Thompson, D.

    1992-10-01

    The aggregation (sorting) of the individual solar cells into an array is commonly based on a single operating point on the current-voltage (I-V) characteristic curve. An alternative approach for cell performance prediction and cell screening is provided by modeling the cell using an equivalent electrical circuit, in which the parameters involved are related to the physical phenomena in the device. These analytical models may be represented by a double exponential I-V characteristic with seven parameters, by a double exponential model with five parameters, or by a single exponential equation with four or five parameters. In this article we address issues concerning methodologies for the determination of solar cell parameters based on measured data points of the I-V characteristic, and introduce a procedure for screening of solar cells for arrays. We show that common curve fitting techniques, e.g., least squares, may produce many combinations of parameter values while maintaining a good fit between the fitted and measured I-V characteristics of the cell. Therefore, techniques relying on curve fitting criteria alone cannot be directly used for cell parameterization. We propose a consistent procedure which takes into account the entire set of parameter values for a batch of cells. This procedure is based on a definition of a mean cell representing the batch, and takes into account the relative contribution of each parameter to the overall goodness of fit. The procedure is demonstrated on a batch of 50 silicon cells for Space Station Freedom.

  11. Parameterization of solar cells

    NASA Technical Reports Server (NTRS)

    Appelbaum, J.; Chait, A.; Thompson, D.

    1992-01-01

    The aggregation (sorting) of the individual solar cells into an array is commonly based on a single operating point on the current-voltage (I-V) characteristic curve. An alternative approach for cell performance prediction and cell screening is provided by modeling the cell using an equivalent electrical circuit, in which the parameters involved are related to the physical phenomena in the device. These analytical models may be represented by a double exponential I-V characteristic with seven parameters, by a double exponential model with five parameters, or by a single exponential equation with four or five parameters. In this article we address issues concerning methodologies for the determination of solar cell parameters based on measured data points of the I-V characteristic, and introduce a procedure for screening of solar cells for arrays. We show that common curve fitting techniques, e.g., least squares, may produce many combinations of parameter values while maintaining a good fit between the fitted and measured I-V characteristics of the cell. Therefore, techniques relying on curve fitting criteria alone cannot be directly used for cell parameterization. We propose a consistent procedure which takes into account the entire set of parameter values for a batch of cells. This procedure is based on a definition of a mean cell representing the batch, and takes into account the relative contribution of each parameter to the overall goodness of fit. The procedure is demonstrated on a batch of 50 silicon cells for Space Station Freedom.

  12. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  13. Solar cell radiation handbook

    NASA Technical Reports Server (NTRS)

    Carter, J. R., Jr.; Tada, H. Y.

    1973-01-01

    A method is presented for predicting the degradation of a solar array in a space radiation environment. Solar cell technology which emphasizes the cell parameters that degrade in a radiation environment, is discussed along with the experimental techniques used in the evaluation of radiation effects. Other topics discussed include: theoretical aspects of radiation damage, methods for developing relative damage coefficients, nature of the space radiation environment, method of calculating equivalent fluence from electron and proton energy spectrums and relative damage coefficients, and comparison of flight data with estimated degradation.

  14. Flexible Solar Cells

    NASA Technical Reports Server (NTRS)

    1994-01-01

    Solar cell "modules" are plastic strips coated with thin films of photovoltaic silicon that collect solar energy for instant conversion into electricity. Lasers divide the thin film coating into smaller cells to build up voltage. Developed by Iowa Thin Film Technologies under NASA and DOE grants, the modules are used as electrical supply for advertising displays, battery rechargers for recreational vehicles, and to power model airplanes. The company is planning other applications both in consumer goods and as a power source in underdeveloped countries.

  15. Monolithic tandem solar cell

    DOEpatents

    Wanlass, Mark W.

    1991-01-01

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell on the first subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. The solar cell can be provided as a two-terminal device or a three-terminal device.

  16. Making Ultrathin Solar Cells

    NASA Technical Reports Server (NTRS)

    Cogan, George W.; Christel, Lee A.; Merchant, J. Thomas; Gibbons, James F.

    1991-01-01

    Process produces extremely thin silicon solar cells - only 50 micrometers or less in thickness. Electrons and holes have less opportunity to recombine before collected at cell surfaces. Efficiency higher and because volume of silicon small, less chance of radiation damage in new cells. Initial steps carried out at normal thickness to reduce breakage and avoid extra cost of special handling. Cells then thinned mechanically and chemically. Final cell includes reflective layer on back surface. Layer bounces unabsorbed light back into bulk silicon so it absorbs and produces useful electrical output.

  17. Amorphous semiconductor solar cell

    DOEpatents

    Dalal, Vikram L.

    1981-01-01

    A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

  18. NASA Facts, Solar Cells.

    ERIC Educational Resources Information Center

    National Aeronautics and Space Administration, Washington, DC.

    The design and function of solar cells as a source of electrical power for unmanned space vehicles is described in this pamphlet written for high school physical science students. The pamphlet is one of the NASA Facts Science Series (each of which consists of four pages) and is designed to fit in the standard size three-ring notebook. Review…

  19. Schottky barrier solar cell

    SciTech Connect

    Cohen, M.J.; Harris, J.S.

    1980-10-14

    A solar cell is constructed by coating an n-type conductivity semiconductor with a thin layer of bromine doped, polymeric sulfur-nitride, (SnBr/sub 0/ /sub 4/)/sub x/. Metal deposits are provided on both materials for making electrical contact to the cell. In a preferred embodiment, the semiconductor is silicon. In a second preferred embodiment, the semiconductor is GaAs on an n+-type conductivity GaAs substrate.

  20. Thin, Lightweight Solar Cell

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr.; Weinberg, Irving

    1991-01-01

    Improved design for thin, lightweight solar photovoltaic cells with front contacts reduces degradation of electrical output under exposure to energetic charged particles (protons and electrons). Increases ability of cells to maintain structural integrity under exposure to ultraviolet radiation by eliminating ultraviolet-degradable adhesives used to retain cover glasses. Interdigitated front contacts and front junctions formed on semiconductor substrate. Mating contacts formed on back surface of cover glass. Cover glass and substrate electrostatically bonded together.

  1. EDITORIAL: Nanostructured solar cells Nanostructured solar cells

    NASA Astrophysics Data System (ADS)

    Greenham, Neil C.; Grätzel, Michael

    2008-10-01

    Conversion into electrical power of even a small fraction of the solar radiation incident on the Earth's surface has the potential to satisfy the world's energy demands without generating CO2 emissions. Current photovoltaic technology is not yet fulfilling this promise, largely due to the high cost of the electricity produced. Although the challenges of storage and distribution should not be underestimated, a major bottleneck lies in the photovoltaic devices themselves. Improving efficiency is part of the solution, but diminishing returns in that area mean that reducing the manufacturing cost is absolutely vital, whilst still retaining good efficiencies and device lifetimes. Solution-processible materials, e.g. organic molecules, conjugated polymers and semiconductor nanoparticles, offer new routes to the low-cost production of solar cells. The challenge here is that absorbing light in an organic material produces a coulombically bound exciton that requires dissociation at a donor-acceptor heterojunction. A thickness of at least 100 nm is required to absorb the incident light, but excitons only diffuse a few nanometres before decaying. The problem is therefore intrinsically at the nano-scale: we need composite devices with a large area of internal donor-acceptor interface, but where each carrier has a pathway to the respective electrode. Dye-sensitized and bulk heterojunction cells have nanostructures which approach this challenge in different ways, and leading research in this area is described in many of the articles in this special issue. This issue is not restricted to organic or dye-sensitized photovoltaics, since nanotechnology can also play an important role in devices based on more conventional inorganic materials. In these materials, the electronic properties can be controlled, tuned and in some cases completely changed by nanoscale confinement. Also, the techniques of nanoscience are the natural ones for investigating the localized states, particularly at

  2. Very high efficiency solar cells

    NASA Astrophysics Data System (ADS)

    Barnett, Allen; Kirkpatrick, Douglas; Honsberg, Christiana

    2006-08-01

    The Defense Advanced Research Projects Agency has initiated the Very High Efficiency Solar Cell (VHESC) program to address the critical need of the soldier for power in the field. Very High Efficiency Solar Cells for portable applications that operate at greater than 55 percent efficiency in the laboratory and 50 percent in production are being developed. We are integrating the optical design with the solar cell design, and have entered previously unoccupied design space that leads to a new architecture paradigm. An integrated team effort is now underway that requires us to invent, develop and transfer to production these new solar cells. Our approach is driven by proven quantitative models for the solar cell design, the optical design and the integration of these designs. We start with a very high performance crystalline silicon solar cell platform. Examples will be presented. Initial solar cell device results are shown for devices fabricated in geometries designed for this VHESC Program.

  3. Quantum Dot Solar Cells

    NASA Astrophysics Data System (ADS)

    Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.

    2002-10-01

    We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.

  4. Nanowire Solar Cells

    NASA Astrophysics Data System (ADS)

    Garnett, Erik C.; Brongersma, Mark L.; Cui, Yi; McGehee, Michael D.

    2011-08-01

    The nanowire geometry provides potential advantages over planar wafer-based or thin-film solar cells in every step of the photoconversion process. These advantages include reduced reflection, extreme light trapping, improved band gap tuning, facile strain relaxation, and increased defect tolerance. These benefits are not expected to increase the maximum efficiency above standard limits; instead, they reduce the quantity and quality of material necessary to approach those limits, allowing for substantial cost reductions. Additionally, nanowires provide opportunities to fabricate complex single-crystalline semiconductor devices directly on low-cost substrates and electrodes such as aluminum foil, stainless steel, and conductive glass, addressing another major cost in current photovoltaic technology. This review describes nanowire solar cell synthesis and fabrication, important characterization techniques unique to nanowire systems, and advantages of the nanowire geometry.

  5. Quantum Dot Solar Cells

    NASA Technical Reports Server (NTRS)

    Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.

    2002-01-01

    We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.

  6. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    NASA Technical Reports Server (NTRS)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, Sarah; Moriarty, T.; Romero, M. J.

    2007-01-01

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of approx.1 eV. For the last several years, research has been conducted by a number of organizations to develop approx.1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) approx.1- eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1- eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm2) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include

  7. Solar cell grid patterns

    NASA Technical Reports Server (NTRS)

    Yasui, R. K.; Berman, P. A. (Inventor)

    1976-01-01

    A grid pattern is described for a solar cell of the type which includes a semiconductive layer doped to a first polarity and a top counter-doped layer. The grid pattern comprises a plurality of concentric conductive grids of selected geometric shapes which are centered about the center of the exposed active surface of the counter-doped layer. Connected to the grids is one or more conductors which extend to the cell's periphery. For the pattern area, the grids and conductors are arranged in the pattern to minimize the maximum distance which any injected majority carriers have to travel to reach any of the grids or conductors. The pattern has a multiaxes symmetry with respect to the cell center to minimize the maximum temperature differentials between points on the cell surface and to provide a more uniform temperature distribution across the cell face.

  8. Novel chlorophyll solar cell

    SciTech Connect

    Ludlow, J.C.

    1981-01-01

    A novel solar battery is being developed which uses chlorophyll a for the generation of a voltage. The battery consists of platinum foil electrode, onto which a mixture of chlorophyll a and lipoic acid is deposited, and a platinum current collector. With such a device, voltages greater than 0.35 volts can reproducibly generated. The dependence of the output of the cell as a function of chlorophyll levels and light intensity has been determined. 9 refs.

  9. Solar-cell defect analyzer

    NASA Technical Reports Server (NTRS)

    Gauthier, M. K.; Miller, E. L.; Shumka, A.

    1980-01-01

    Laser-Scanning System pinpoints imperfections in solar cells. Entire solar panels containing large numbers of cells can be scanned. Although technique is similar to use of scanning electron microscope (SEM) to locate microscopic imperfections, it differs in that large areas may be examined, including entire solar panels, and it is not necessary to remove cover glass or encapsulants.

  10. Silicon Solar Cell Turns 50

    SciTech Connect

    Perlin, J.

    2004-08-01

    This short brochure describes a milestone in solar (or photovoltaic, PV) research-namely, the 50th anniversary of the invention of the first viable silicon solar cell by three researchers at Bell Laboratories.

  11. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

    DOEpatents

    Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

    2001-01-01

    A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

  12. Development of a 2.0 eV AlGaInP Solar Cell Grown by OMVPE

    SciTech Connect

    Perl, Emmett E.; Simon, John; Geisz, John F.; Olavarria, Waldo; Young, Michelle; Duda, Anna; Dippo, Pat; Friedman, Daniel J.; Steiner, Myles A.

    2015-06-14

    AlGaInP solar cells with a bandgap (Eg) of ~2.0 eV are developed for use in next-generation multijunction photovoltaic devices. This material system is of great interest for both space and concentrator photovoltaics due to its high bandgap, which enables the development of high-efficiency five-junction and six-junction devices and is also useful for solar cells operated at elevated temperatures. In this work, we explore the conditions for the Organometallic Vapor Phase Epitaxy (OMVPE) growth of AlGaInP and study their effects on cell performance. A ~2.0 eV AlGaInP solar cell is demonstrated with an open circuit voltage (VOC) of 1.59V, a bandgap-voltage offset (WOC) of 420mV, a fill factor (FF) of 88.0%, and an efficiency of 14.8%. These AlGaInP cells have attained a similar FF, WOC and internal quantum efficiency (IQE) to the best upright GaInP cells grown in our lab to date.

  13. Emcore High Efficiency Space Solar Cell Technology: 30% And Beyond

    NASA Astrophysics Data System (ADS)

    Sharps, P. R.; Aiken, D.; Boca, A.; Buitrago, O.; Cho, B.; Chummney, D.; Cornfield, A.; Garnica, R.; Guzie, B.; Haney, D.; Lin, Y.; Newman, F.; Patel, P.; Stan, M.; Steinfeld, J.; Spann, J.; Torino, C.; Varghese, T.

    2011-10-01

    We present data on the Emcore 29.5% class ZTJ cell that has been qualified to the AIAA S-111 cell standard, and is now in high volume production for a number of flights. We present a summary of the results from the cell qualification tests, focussing on the testing methodology as well as the results for the combined effects test. In addition, the ZTJ cell has been qualified to the AIAA S-112 SCA (CIC) integration standard, and a summary of these results will be presented as well. The 30% efficiency level for space applications is considered limiting for the lattice matched GaInP2/InGaAs/Ge triple junction device. In the past decade the efficiency of the GaInP2/GaAs based cell has increased from 23% to nearly 30%, and surpassing this value requires novel device designs. While multi- junction cells have been receiving considerable attention for terrestrial applications because of their ability to achieve high efficiencies, there are additional requirements for performance and survival in the space environment. In typical operation in space the degradation caused by particle radiation as well as weight requirements place constraints on what cell architectures can be utilized. We present data for an inverted metamorphic multi-junction (IMM) approach that has demonstrated a clear path to higher efficiencies as well as a very high specific power. The IMM approach also opens opportunities for novel cell packaging and array designs.

  14. Epitaxial solar cells fabrication

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Kressel, H.

    1975-01-01

    Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

  15. Solar cell module lamination process

    DOEpatents

    Carey, Paul G.; Thompson, Jesse B.; Aceves, Randy C.

    2002-01-01

    A solar cell module lamination process using fluoropolymers to provide protection from adverse environmental conditions and thus enable more extended use of solar cells, particularly in space applications. A laminate of fluoropolymer material provides a hermetically sealed solar cell module structure that is flexible and very durable. The laminate is virtually chemically inert, highly transmissive in the visible spectrum, dimensionally stable at temperatures up to about 200.degree. C. highly abrasion resistant, and exhibits very little ultra-violet degradation.

  16. Monolithic tandem solar cell

    DOEpatents

    Wanlass, M.W.

    1994-06-21

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. 9 figs.

  17. Floating emitter solar cell

    NASA Technical Reports Server (NTRS)

    Chih, Sah (Inventor); Cheng, Li-Jen (Inventor)

    1987-01-01

    A front surface contact floating emitter solar cell transistor is provided in a semiconductor body (n-type), in which floating emitter sections (p-type) are diffused or implanted in the front surface. Between the emitter sections, a further section is diffused or implanted in the front surface, but isolated from the floating emitter sections, for use either as a base contact to the n-type semiconductor body, in which case the section is doped n+, or as a collector for the adjacent emitter sections.

  18. Photoelectric solar cell array

    SciTech Connect

    Lidorenko, N.S.; Afian, V.V.; Martirosian, R.G.; Ryabikov, S.V.; Strebkov, D.S.; Vartanian, A.V.

    1983-11-29

    A photoelectric solar cell device comprises a dispersing element exposed to the sun's radiation and followed in the optical path by photocells having different spectral sensitivities. Each photocell has its working surface so oriented that the light beam with the wavelength corresponding to the maximum spectral sensitivity of that photocell impinges on its working surface. The dispersing element is a hologram representing light sources with different wavelengths. The photocells are positioned in the image planes of the light sources producing the light beams of the corresponding wavelengths.

  19. "Pelled-film" solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1980-01-01

    Cells are lighter and less expensive than conventional cells. GaAs cells are deposited on GaAs substrate coated with thin etchable layer that allows completed cell film to be peeled away from substrate. At estimated conversion of 18 percent, array of cells delivers about 1 kW of electricity per kilogram of cell material. Blanket of cells delivers energy at power-to-weight ratio about 4 times that of conventional 2-mil (0.5-mm) silicon solar cells. GaAs solar cells have better radiation resistance than silicon cells.

  20. Schottky barrier solar cell

    SciTech Connect

    Stirn, R.J.; Yeh, Y.C.M.

    1981-07-01

    A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. Official Gazette of the U.S. Patent and Trademark Office

  1. Schottky barrier solar cell

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M. (Inventor)

    1981-01-01

    A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.

  2. Quantum junction solar cells.

    PubMed

    Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO(2)); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. PMID:22881834

  3. Carbon Nanotube Solar Cells

    PubMed Central

    Klinger, Colin; Patel, Yogeshwari; Postma, Henk W. Ch.

    2012-01-01

    We present proof-of-concept all-carbon solar cells. They are made of a photoactive side of predominantly semiconducting nanotubes for photoconversion and a counter electrode made of a natural mixture of carbon nanotubes or graphite, connected by a liquid electrolyte through a redox reaction. The cells do not require rare source materials such as In or Pt, nor high-grade semiconductor processing equipment, do not rely on dye for photoconversion and therefore do not bleach, and are easy to fabricate using a spray-paint technique. We observe that cells with a lower concentration of carbon nanotubes on the active semiconducting electrode perform better than cells with a higher concentration of nanotubes. This effect is contrary to the expectation that a larger number of nanotubes would lead to more photoconversion and therefore more power generation. We attribute this to the presence of metallic nanotubes that provide a short for photo-excited electrons, bypassing the load. We demonstrate optimization strategies that improve cell efficiency by orders of magnitude. Once it is possible to make semiconducting-only carbon nanotube films, that may provide the greatest efficiency improvement. PMID:22655070

  4. Silicon MINP solar cells

    NASA Technical Reports Server (NTRS)

    Olsen, L. C.; Addis, F. W.; Miller, W. A.

    1985-01-01

    The MINP solar cell concept refers to a cell structure designed to be a base region dominated device. Thus, it is desirable that recombination losses are reduced to the point that they occur only in the base region. The most unique feature of the MINP cell design is that a tunneling contact is utilized for the metallic contact on the front surface. The areas under the collector grid and bus bar are passivated by a thin oxide of tunneling thickness. Efforts must also be taken to minimize recombination at the surface between grid lines, at the junction periphery and within the emitter. Results of both theoretical and experimental studies of silicon MINP cells are given. Performance calculations are described which give expected efficiencies as a function of base resistivity and junction depth. Fabrication and characterization of cells are discussed which are based on 0.2 ohm-cm substrates, diffused emitters on the order of 0.15 to 0.20 microns deep, and with Mg MIS collector grids. A total area AM 1 efficiency of 16.8% was achieved. Detailed analyses of photocurrent and current loss mechanisms are presented and utilized to discuss future directions of research. Finally, results reported by other workers are discussed.

  5. III-V Growth on Silicon Toward a Multijunction Cell

    SciTech Connect

    Geisz, J.; Olson, J.; McMahon, W.; Friedman, D.; Kibbler, A.; Kramer, C.; Young, M.; Duda, A.; Ward, S.; Ptak, A.; Kurtz, S.; Wanlass, M.; Ahrenkiel, P.; Jiang, C. S.; Moutinho, H.; Norman, A.; Jones, K.; Romero, M.; Reedy, B.

    2005-11-01

    A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make more traditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.

  6. High-efficiency, thin-film solar cells. Annual subcontractor report, 1 July 1991--30 June 1992

    SciTech Connect

    Gale, R.P.

    1994-01-01

    This report describes work on a 3-year research program to investigate thin-film GaAs/GaInP cells using the cleavage of lateral epitaxial film for transfer (CLEFT) technique, and to determine the process to enable overgrowth of GaAs films using organometallic chemistry. Application of the CLEFT thin-film technique to GaInP/GaAs solar cells and organometallic overgrowth was investigated. A problem of alloy contamination was identified and controlled, leading to higher quality layers. Solar cell structures were grown and fabricated using previously determined growth parameters for GaAs and GaInP. With the improved materials developed significant improvements were made in solar cell performance. Conditions for in-situ overgrowth by organometallic chemical vapor deposition (OMCVD) were determined and continuous GaAs layers were grown over a separation mask layer. The layers were successfully separated from their substrate using the CLEFT process, demonstrating the application of overgrowth using OM chemistry with HCl.

  7. Lunar production of solar cells

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Perino, Maria Antonietta

    1989-01-01

    The feasibility of manufacturing of solar cells on the moon for spacecraft applications is examined. Because of the much lower escape velocity, there is a great advantage in lunar manufacture of solar cells compared to Earth manufacture. Silicon is abundant on the moon, and new refining methods allow it to be reduced and purified without extensive reliance on materials unavailable on the moon. Silicon and amorphous silicon solar cells could be manufactured on the moon for use in space. Concepts for the production of a baseline amorphous silicon cell are discussed, and specific power levels are calculated for cells designed for both lunar and Earth manufacture.

  8. Thin film solar cell workshop

    NASA Technical Reports Server (NTRS)

    Armstrong, Joe; Jeffrey, Frank

    1993-01-01

    A summation of responses to questions posed to the thin-film solar cell workshop and the ensuing discussion is provided. Participants in the workshop included photovoltaic manufacturers (both thin film and crystalline), cell performance investigators, and consumers.

  9. Inversion layer MOS solar cells

    NASA Technical Reports Server (NTRS)

    Ho, Fat Duen

    1986-01-01

    Inversion layer (IL) Metal Oxide Semiconductor (MOS) solar cells were fabricated. The fabrication technique and problems are discussed. A plan for modeling IL cells is presented. Future work in this area is addressed.

  10. An Introduction to Solar Cells

    ERIC Educational Resources Information Center

    Feldman, Bernard J.

    2010-01-01

    Most likely, solar cells will play a significant role in this country's strategy to address the two interrelated issues of global warming and dependence on imported oil. The purpose of this paper is to present an explanation of how solar cells work at an introductory high school, college, or university physics course level. The treatment presented…

  11. Facility for testing solar cells

    NASA Technical Reports Server (NTRS)

    Yasui, R. K.

    1974-01-01

    Primary components of facility are test chamber and external solar simulator. Voltage--current performance characteristics of solar cells at various combinations of temperature and light intensity are plotted on X-Y recorder. Data are fed into computer for calculation of maximum power, curve shape factor, cell efficiency, and averages of each parameter.

  12. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    History of GaAs solar cell development is provided. Photovoltaic equations are described along with instrumentation techniques for measuring solar cells. Radiation effects in solar cells, electrical performance, and spacecraft flight data for solar cells are discussed. The space radiation environment and solar array degradation calculations are addressed.

  13. Controlled reflectance solar cell

    SciTech Connect

    Dill, H.G.; Lillington, D.R.

    1989-06-13

    A solar cell is described comprising: A semiconductor body having a front layer of a first conductivity type and an adjacent back layer of a second conductivity type opposite of the first conductivity type. The front and back layers form front and back major surfaces, respectively the semiconductor body further having openings through the back major surface and back layer which form recesses extending to the front layer. The recesses having walls which are doped to the first conductivity type; a first electrical contact disposed in the recesses making electrical contact the first conductivity type layer; and a second electrical contact disposed on the back major surface making electrical contact to the second conductivity type layer.

  14. Back wall solar cell

    NASA Technical Reports Server (NTRS)

    Brandhorst, H. W., Jr. (Inventor)

    1978-01-01

    A solar cell is disclosed which comprises a first semiconductor material of one conductivity type with one face having the same conductivity type but more heavily doped to form a field region arranged to receive the radiant energy to be converted to electrical energy, and a layer of a second semiconductor material, preferably highly doped, of opposite conductivity type on the first semiconductor material adjacent the first semiconductor material at an interface remote from the heavily doped field region. Instead of the opposite conductivity layer, a metallic Schottky diode layer may be used, in which case no additional back contact is needed. A contact such as a gridded contact, previous to the radiant energy may be applied to the heavily doped field region of the more heavily doped, same conductivity material for its contact.

  15. Upconversion in solar cells

    PubMed Central

    2013-01-01

    The possibility to tune chemical and physical properties in nanosized materials has a strong impact on a variety of technologies, including photovoltaics. One of the prominent research areas of nanomaterials for photovoltaics involves spectral conversion. Modification of the spectrum requires down- and/or upconversion or downshifting of the spectrum, meaning that the energy of photons is modified to either lower (down) or higher (up) energy. Nanostructures such as quantum dots, luminescent dye molecules, and lanthanide-doped glasses are capable of absorbing photons at a certain wavelength and emitting photons at a different (shorter or longer) wavelength. We will discuss upconversion by lanthanide compounds in various host materials and will further demonstrate upconversion to work for thin-film silicon solar cells. PMID:23413889

  16. Germanium Nanocrystal Solar Cells

    NASA Astrophysics Data System (ADS)

    Holman, Zachary Charles

    Greenhouse gas concentrations in the atmosphere are approaching historically unprecedented levels from burning fossil fuels to meet the ever-increasing world energy demand. A rapid transition to clean energy sources is necessary to avoid the potentially catastrophic consequences of global warming. The sun provides more than enough energy to power the world, and solar cells that convert sunlight to electricity are commercially available. However, the high cost and low efficiency of current solar cells prevent their widespread implementation, and grid parity is not anticipated to be reached for at least 15 years without breakthrough technologies. Semiconductor nanocrystals (NCs) show promise for cheap multi-junction photovoltaic devices. To compete with photovoltaic materials that are currently commercially available, NCs need to be inexpensively cast into dense thin films with bulk-like electrical mobilities and absorption spectra that can be tuned by altering the NC size. The Group II-VI and IV-VI NC communities have had some success in achieving this goal by drying and then chemically treating colloidal particles, but the more abundant and less toxic Group IV NCs have proven more challenging. This thesis reports thin films of plasma-synthesized Ge NCs deposited using three different techniques, and preliminary solar cells based on these films. Germanium tetrachloride is dissociated in the presence of hydrogen in a nonthermal plasma to nucleate Ge NCs. Transmission electron microscopy and X-ray diffraction indicate that the particles are nearly monodisperse (standard deviations of 10-15% the mean particle diameter) and the mean diameter can be tuned from 4-15 nm by changing the residence time of the Ge NCs in the plasma. In the first deposition scheme, a Ge NC colloid is formed by reacting nanocrystalline powder with 1-dodecene and dispersing the functionalized NCs in a solvent. Films are then formed on substrates by drop-casting the colloid and allowing it to dry

  17. Multiple Exciton Generation Solar Cells

    SciTech Connect

    Luther, J. M.; Semonin, O. E.; Beard, M. C.; Gao, J.; Nozik, A. J.

    2012-01-01

    Heat loss is the major factor limiting traditional single junction solar cells to a theoretical efficiency of 32%. Multiple Exciton Generation (MEG) enables efficient use of the solar spectrum yielding a theoretical power conversion efficiency of 44% in solar cells under 1-sun conditions. Quantum-confined semiconductors have demonstrated the ability to generate multiple carriers but present-day materials deliver efficiencies far below the SQ limit of 32%. Semiconductor quantum dots of PbSe and PbS provide an active testbed for developing high-efficiency, inexpensive solar cells benefitting from quantum confinement effects. Here, we will present recent work of solar cells employing MEG to yield external quantum efficiencies exceeding 100%.

  18. Module level solutions to solar cell polarization

    DOEpatents

    Xavier, Grace , Li; Bo

    2012-05-29

    A solar cell module includes interconnected solar cells, a transparent cover over the front sides of the solar cells, and a backsheet on the backsides of the solar cells. The solar cell module includes an electrical insulator between the transparent cover and the front sides of the solar cells. An encapsulant protectively packages the solar cells. To prevent polarization, the insulator has resistance suitable to prevent charge from leaking from the front sides of the solar cells to other portions of the solar cell module by way of the transparent cover. The insulator may be attached (e.g., by coating) directly on an underside of the transparent cover or be a separate layer formed between layers of the encapsulant. The solar cells may be back junction solar cells.

  19. Bifacial space silicon solar cell

    NASA Astrophysics Data System (ADS)

    Strobl, G.; Kasper, C.; Rasch, K.-D.; Roy, K.

    A bifacial light sensitive solar cell for use in space solar generators is presented. A bifacial cell is almost transparent for infrared radiation, resulting in a low solar absorptance (0.63 for a bare cell). The operating temperature in space is estimated to be 10-20 C lower than for BSR cells. This advantage holds for both LEO and GEO missions. In addition to the direct sun radiation the bifacial cell converts the albedo radiation reflected by the earth and illuminates the back side of the bifacial cell. This is particularly important for LEO missions. The efficiency of experimental cells, 50 to 180 microns thick, was found to be up to 40 percent higher than for conventional BSFR cells.

  20. Mean transverse energy and response time measurements of GaInP based photocathodes

    SciTech Connect

    Jin, Xiuguang; Yamamoto, Masahiro; Miyajima, Tsukasa; Honda, Yosuke; Uchiyama, Takashi; Tabuchi, Masao; Takeda, Yoshikazu

    2014-08-14

    GaInP, which has a wider band gap than GaAs, is introduced as a photocathode for energy recovery linac (ERL). The wide band gap of material is expected to reduce the heating effect in the thermal relaxation process after high energy excitation. GaInP photocathodes exhibited higher quantum efficiency than GaAs and low thermal emittance as the same as GaAs photocathodes under green laser light irradiation. A short picosecond electron pulse was also achieved with the GaInP photocathode under 532 nm pulse laser irradiation. These experimental results demonstrate that the GaInP photocathode is an important candidate for ERL.

  1. Fundamentals of thin solar cells

    SciTech Connect

    Yablonovitch, E.

    1995-08-01

    It is now widely recognized that thin solar cells can present certain advantages for performance and cost. This is particularly the case when light trapping in the semiconductor film is incorporated, as compensation for the diminished single path thickness of the solar cell. In a solar cell thinner than a minority carrier diffusion length, the current collection is of course very easy. More importantly the concentration of an equivalent number of carriers in a thinner volume results in a higher Free Energy, or open circuit voltage. This extra Free Energy may be regarded as due to the concentration factor, just as it would be for photons, electrons, or for any chemical species. The final advantage of a thin solar cell is in the diminished material usage, a factor of considerable importance when we consider the material cost of the high quality semiconductors which we hope to employ.

  2. (Ga,In)P nanowires grown without intentional catalyst

    NASA Astrophysics Data System (ADS)

    Cerqueira, Carolina F.; Viana, Bartolomeu C.; Luz-Lima, Cleanio da; Perea-Lopez, Nestor; Terrones, Mauricio; Falcão, Eduardo H. L.; Gomes, Anderson S. L.; Chassagnon, Remi; Pinto, André L.; Sampaio, Luiz C.; Sacilotti, Marco

    2015-12-01

    We have grown (Ga,In)P nanowires through the MOCVD method without a intentional catalyst. The organometallic precursor triethylgallium ((C2H5)3 Ga), used as Ga source, is transported by the N2 gas carrier to the reactor chamber where reacts with the InP vapor pressure producing the nanowires. Two different reactor pressures (70 and 740 Torr) were used leading to nanowires with different In contents. The nanowires are straight or wool-like and exhibit a twinned structure. They emit an intense orange to red color visible even to the naked eyes. Interface tunneling process at Ga1-xInx P /Ga1-yIny P interfaces (x ≠ y) is proposed to explain this efficient light emission mechanism.

  3. Solar cell with back side contacts

    DOEpatents

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J; Wanlass, Mark Woodbury; Clews, Peggy J

    2013-12-24

    A III-V solar cell is described herein that includes all back side contacts. Additionally, the positive and negative electrical contacts contact compoud semiconductor layers of the solar cell other than the absorbing layer of the solar cell. That is, the positive and negative electrical contacts contact passivating layers of the solar cell.

  4. Plasma Etching Improves Solar Cells

    NASA Technical Reports Server (NTRS)

    Bunyan, S. M.

    1982-01-01

    Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.

  5. Dust Removal from Solar Cells

    NASA Technical Reports Server (NTRS)

    Ashpis, David E. (Inventor)

    2015-01-01

    A solar panel cleaning device includes a solar panel having a plurality of photovoltaic cells arranged in rows and embedded in the solar panel with space between the rows. A transparent dielectric overlay is affixed to the solar panel. A plurality of electrode pairs each of which includes an upper and a lower electrode are arranged on opposite sides of the transparent dielectric and are affixed thereto. The electrodes may be transparent electrodes which may be arranged without concern for blocking sunlight to the solar panel. The solar panel may be a dielectric and its dielectric properties may be continuously and spatially variable. Alternatively the dielectric used may have dielectric segments which produce different electrical field and which affects the wind "generated."

  6. Dust removal from solar cells

    NASA Technical Reports Server (NTRS)

    Ashpis, David E. (Inventor)

    2011-01-01

    A solar panel cleaning device includes a solar panel having a plurality of photovoltaic cells arranged in rows and embedded in the solar panel with space between the rows. A transparent dielectric overlay is affixed to the solar panel. A plurality of electrode pairs each of which includes an upper and a lower electrode are arranged on opposite sides of the transparent dielectric and are affixed thereto. The electrodes may be transparent electrodes which may be arranged without concern for blocking sunlight to the solar panel. The solar panel may be a dielectric and its dielectric properties may be continuously and spatially variable. Alternatively the dielectric used may have dielectric segments which produce different electrical field and which affects the wind "generated."

  7. Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells

    SciTech Connect

    Jiang, C.-S.; Friedman, D. J.; Moutinho, H. R.; Al-Jassim, M. M.

    2006-01-01

    We report on a direct measurement of the electrical potential on cross-sections of GaInP{sub 2}/GaAs multiple-junction solar cells by using an ultrahigh-vacuum scanning Kelvin probe microscope (UHV-SKPM). The UHV-SKPM allows us to measure the potential without air molecules being adsorbed on the cross-sectional surface. Moreover, it uses a GaAs laser with photon energy of 1.4 eV for the atomic force microscope (AFM) operation. This eliminated the light-absorption-induced bottom-junction flattening and top-junction enhancement, which happened in our previous potential measurement using a 1.85-eV laser for the AFM operation. Three potentials were measured at the top, tunneling, and bottom junctions. Values of the potentials are smaller than the potentials in the bulk. This indicates that the Fermi level on the UHV-cleaved (110) surface was pinned, presumably due to defects upon cleaving. We also observed higher potentials at atomic steps than on the terraces for both GaInP2 epitaxial layer and GaAs substrate. Combining scanning tunneling microscopy (STM) and SKPM measurements, we found that the potential height at steps of the GaAs substrate depends on the step direction, which is probably a direct result of unbalanced cations and anions at the steps.

  8. Terrestrial concentrator solar cell module

    SciTech Connect

    Fraas, L.M.; Mansoori, N.; Kim, N.B.; Avery, J.E.

    1992-06-02

    This patent describes a solar cell module having a plurality of discrete cell units wherein each cell unit constitutes a tandem cell comprising an upper cell of a first semiconductive material and a lower cell of a second semiconductive material. It comprises a housing having a base and an upper portion; primary outer lens elements supported by the housing upper portion; a secondary radiant energy concentrating element associated with each primary lens element for protecting the carrier tape against incident light; each of the solar cell units being thermally coupled to the base; and parallel spaced strips of conductive material carried by the tape with means for separately connecting the strips to predetermined contact surfaces of the upper and lower cells of each cell unit.

  9. Silicon solar cell

    SciTech Connect

    Hovel, H.J.

    1983-03-01

    A high efficiency silicon solar cell may be constructed by providing a two-stage drift field emitter with a 1 micron thickness on a drift field base region with a back surface field region. The stage of the drift field emitter adjacent to the junction is moderately doped from 1018 to 1016 atoms/cc adjacent the junction to minimize bandgap shrin and to maximize carrier lifetime while the stage of the emitter adjacent the surface is highly doped at 1019 atoms/cc to minimize sheet resistance. The drift field is aiding in both the emitter and base regions. The size of the base is less than an effective diffusion length. There is a difference in doping level in the base depending on the conductivity type of the silicon. For n-conductivity type the base is doped 1013 atoms/cc at the pn junction, increasing to 1016 atoms/cc in the drift field region. For p-conductivity type the base is doped 1016 at the junction, increasing to 1018 atoms/cc in the drift field. A back surface field is provided adjacent the ohmic contact on the part of the base remote from the junction by doping to 1020 to 1021 atoms/cc. A passivating antireflective layer is added to the light incident surface. The 1 micron emitter region contains a 0.1 to 0.2 mu m thick high conducting region adjacent the antireflective coating on the light incident surface and a drift field region 0.3 to 0.9 mu m thick. The base region has a drift field region 20 to 100 mu m thick and the overall base region is 50 to 450 mu m thick. The back surface field region is 1 mu m thick.

  10. Crystalline Silicon Solar Cells

    NASA Astrophysics Data System (ADS)

    Green, Martin A.

    2015-10-01

    The following sections are included: * Overview * Silicon cell development * Substrate production * Cell processing * Cell costs * Opportunities for improvement * Silicon-supported thin films * Summary * Acknowledgement * References

  11. Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

    NASA Technical Reports Server (NTRS)

    Alfano, R. R.; Wang, W. B.; Mohaidat, J. M.; Cavicchia, M. A.; Raisky, O. Y.

    1995-01-01

    The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

  12. Multicrystalline silicon bifacial solar cells

    NASA Astrophysics Data System (ADS)

    Jimeno, J. C.; Luque, A.

    The results of several batches of multicrystalline silicon bifacial solar cells (HEM and cast) are analyzed. I-V curves are measured under front and back illuminations and also in the dark, at several temperatures. It is concluded that HEM wafers might be used to manufacture commercial bifacial cells, while the high base recombination prevents the use of cast wafers for this purpose.

  13. Gap/silicon Tandem Solar Cell with Extended Temperature Range

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A. (Inventor)

    2006-01-01

    A two-junction solar cell has a bottom solar cell junction of crystalline silicon, and a top solar cell junction of gallium phosphide. A three (or more) junction solar cell has bottom solar cell junctions of silicon, and a top solar cell junction of gallium phosphide. The resulting solar cells exhibit improved extended temperature operation.

  14. Thin film solar cell module

    SciTech Connect

    Gay, R.R.

    1987-01-20

    A thin film solar cell module is described comprising a first solar cell panel containing an array of solar cells consisting of a TFS semiconductor sandwiched between a transparent conductive zinc oxide layer and a transparent conductive layer selected from the group consisting of tin oxide, indium tin oxide, and zinc oxide deposited upon a transparent superstrate, and a second solar cell panel containing an array of solar cells consisting of a CIS semiconductor layer sandwiched between a zinc oxide semiconductor layer and a conductive metal layer deposited upon an insulating substrate. The zinc oxide semiconductor layer contains a first relatively thin layer of high resistivity zinc oxide adjacent the CIS semiconductor and a second relatively thick layer of low resistivity zinc oxide overlying the high resistivity zinc oxide layer. The transparent conductive zinc oxide layer of the first panel faces the low resistivity zinc oxide layer of the second panel, the first and second panels being positioned optically in series and separated by a transparent insulating layer.

  15. Nanocrystal-polymer solar cells

    NASA Astrophysics Data System (ADS)

    Huynh, Wendy Uyen

    The ability to structure materials on a nanometer dimension enables the processes of solar energy conversion to be optimized at their most fundamental length scale. In semiconducting nanocrystals, optical absorption and electrical transport can be tailored by changing their radius and length, respectively. The unique features of quantum confinement and shape manipulation characteristic for inorganic nanocrystals can be utilized to fabricate solar cells with properties not observed in organic or conventional inorganic solar cells. Furthermore, their solution processibility provides fabrication advantages in the production of low cost, large area, and flexible solar cells. By blending organic conjugated polymers with CdSe nanocrystals efficient thin film solar cells have been constructed. Intimate contact for efficient charge transfer between the polymer and nanocrystal components of the blend was achieved by removing the organic ligands on the surface of the nanocrystal and by using solvent mixtures. Control of the nanocrystal length and therefore the distance on which electrons are transported directly through a thin film device enabled the creation of direct pathways for the transport of electrons. In addition, tuning the band gap by altering the nanocrystal radius as well as using alternate materials such as CdTe the overlap between the absorption spectrum of the cell and the solar emission spectrum could be optimized. A photovoltaic device consisting of 7nm by 60nm CdSe nanorods and the conjugated polymer poly-3(hexylthiophene) was assembled from solution with an external quantum efficiency of over 54% and a monochromatic power conversion efficiency of up to 7% under illumination at low light intensity. Under AM 1.5 Global solar conditions, we obtained a power conversion efficiency of 1.7%.

  16. Silicon concentrator solar cell research

    SciTech Connect

    Green, M.A.; Zhao, J.; Wang, A.; Dai, X.; Milne, A.; Cai, S.; Aberle, A.; Wenham, S.R.

    1993-06-01

    This report describes work conducted between December 1990 and May 1992 continuing research on silicon concentrator solar cells. The objectives of the work were to improve the performance of high-efficiency cells upon p-type substrates, to investigate the ultraviolet stability of such cells, to develop concentrator cells based on n-type substrates, and to transfer technology to appropriate commercial environments. Key results include the identification of contact resistance between boron-defused areas and rear aluminum as the source of anomalously large series resistance in both p- and n-type cells. A major achievement of the present project was the successful transfer of cell technology to both Applied Solar Energy Corporation and Solarex Corporation.

  17. Development of concentrator solar cells

    SciTech Connect

    Not Available

    1994-08-01

    A limited pilot production run on PESC silicon solar cells for use at high concentrations (200 to 400 suns) is summarized. The front contact design of the cells was modified for operation without prismatic covers. The original objective of the contract was to systematically complete a process consolidation phase, in which all the, process improvements developed during the contract would be combined in a pilot production run. This pilot run was going to provide, a basis for estimating cell costs when produced at high throughput. Because of DOE funding limitations, the Photovoltaic Concentrator Initiative is on hold, and Applied Solar`s contract was operated at a low level of effort for most of 1993. The results obtained from the reduced scope pilot run showed the effects of discontinuous process optimization and characterization. However, the run provided valuable insight into the technical areas that can be optimized to achieve the original goals of the contract.

  18. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  19. Solar cell spectral response characterization

    NASA Technical Reports Server (NTRS)

    Zalewski, E. F.; Geist, J.

    1979-01-01

    The absolute spectral response of solar cells is reported in the 400-1000-nm spectral region. Measurements were performed using two different types of monochromatic sources: amplitude-stabilized CW laser lines and interference filters with an incandescent lamp. Both types of calibration procedures use electrical substitution radiometry as the basis of traceability to absolute SI units. The accuracy of the calibration is shown to be limited by the nonideal characteristics of the solar cells themselves, specifically spatial nonuniformities and nonlinearities induced by high light levels.

  20. Solar cell circuit and method for manufacturing solar cells

    NASA Technical Reports Server (NTRS)

    Mardesich, Nick (Inventor)

    2010-01-01

    The invention is a novel manufacturing method for making multi-junction solar cell circuits that addresses current problems associated with such circuits by allowing the formation of integral diodes in the cells and allows for a large number of circuits to readily be placed on a single silicon wafer substrate. The standard Ge wafer used as the base for multi-junction solar cells is replaced with a thinner layer of Ge or a II-V semiconductor material on a silicon/silicon dioxide substrate. This allows high-voltage cells with multiple multi-junction circuits to be manufactured on a single wafer, resulting in less array assembly mass and simplified power management.

  1. Coupling light to solar cells

    SciTech Connect

    Luque, A. |

    1993-11-01

    Efficiencies of more than 33% have been achieved today in the photovoltaic conversion of solar energy into electricity. Part of this achievement is due to a effective coupling of sunlight to the solar cell. In particular three aspects of light-cell coupling are studied here: (a) the achievement of high irradiance on the cell; that is, the study of concentration; (b) the increase of the absorption in the cell and (c) the matching of the sun spectrum to the cell, with the use of several cells or thermo-photovoltaic devices. Finally, the ultimate limits of the efficiency of solar cells, and photovoltaic devices in general, are studied. It is found that efficiencies in the range of 85% (depending on the spectrum of the sun) are theoretically possible. Also the conditions for thermodynamically reversible operation are analyzed. Some laboratory results are presented and the role of the light-cell coupling in the achievement of this high efficiency is stressed. 70 refs., 30 figs., 6 tabs.

  2. Impurities in silicon solar cells

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.

    1985-01-01

    Metallic impurities, both singly and in combinations, affect the performance of silicon solar cells. Czochralski silicon web crystals were grown with controlled additions of secondary impurities. The primary electrical dopants were boron and phosphorus. The silicon test ingots were grown under controlled and carefully monitored conditions from high-purity charge and dopant material to minimize unintentional contamination. Following growth, each crystal was characterized by chemical, microstructural, electrical, and solar cell tests to provide a detailed and internally consistent description of the relationships between silicon impurity concentration and solar cell performance. Deep-level spectroscopy measurements were used to measure impurity concentrations at levels below the detectability of other techniques and to study thermally-induced changes in impurity activity. For the majority of contaminants, impurity-induced performance loss is due to a reduction of the base diffusion length. From these observations, a semi-empirical model which predicts cell performance as a function of metal impurity concentration was formulated. The model was then used successfully to predict the behavior of solar cells bearing as many as 11 different impurities.

  3. Alining Solder Pads on a Solar Cell

    NASA Technical Reports Server (NTRS)

    Lazzery, A. G.

    1984-01-01

    Mechanism consisting of stylus and hand-operated lever incorporated into screening machine to precisely register front and back solder pads during solar-cell assembly. Technique may interest those assembling solar cells manually for research or prototype work.

  4. Organic solar cells: Going green

    NASA Astrophysics Data System (ADS)

    Luo, Guoping; Wu, Hongbin

    2016-02-01

    High-performance polymer solar cells are normally processed with halogenated solvents, which are toxic and hazardous. Now, high power-conversion efficiency in bulk-heterojunction devices is achieved by using a non-toxic hydrocarbon solvent through an environmentally friendly processing route.

  5. Solar-Cell Slide Rule

    NASA Technical Reports Server (NTRS)

    Yamakawa, K. A.

    1983-01-01

    Slide rule relates efficiency, impurity types, impurity concentrations, and process types. Solar cell slide rule calculations are determination of allowable impurity concentration for nonredistributive process, determination of impurity buildup factor for redistributive process and determination of allowable impurity concentration for redistributive process.

  6. Low cost solar cell arrays

    NASA Technical Reports Server (NTRS)

    Iles, P. A.; Mclennan, H.

    1975-01-01

    Limitations in both space and terrestial markets for solar cells are described. Based on knowledge of the state-of-the-art, six cell options are discussed; as a result of this discussion, the three most promising options (involving high, medium and low efficiency cells respectively) were selected and analyzed for their probable costs. The results showed that all three cell options gave promise of costs below $10 per watt in the near future. Before further cost reductions can be achieved, more R and D work is required; suggestions for suitable programs are given.

  7. Process of making solar cell module

    DOEpatents

    Packer, M.; Coyle, P.J.

    1981-03-09

    A process is presented for the manufacture of solar cell modules. A solution comprising a highly plasticized polyvinyl butyral is applied to a solar cell array. The coated array is dried and sandwiched between at last two sheets of polyvinyl butyral and at least two sheets of a rigid transparent member. The sandwich is laminated by the application of heat and pressure to cause fusion and bonding of the solar cell array with the rigid transparent members to produce a solar cell module.

  8. Key Physical Mechanisms in Nanostructured Solar Cells

    SciTech Connect

    Dr Stephan Bremner

    2010-07-21

    The objective of the project was to study both theoretically and experimentally the excitation, recombination and transport properties required for nanostructured solar cells to deliver energy conversion efficiencies well in excess of conventional limits. These objectives were met by concentrating on three key areas, namely, investigation of physical mechanisms present in nanostructured solar cells, characterization of loss mechanisms in nanostructured solar cells and determining the properties required of nanostructured solar cells in order to achieve high efficiency and the design implications.

  9. Sheet plastic filters for solar cells

    NASA Technical Reports Server (NTRS)

    Wizenick, R. J.

    1972-01-01

    Poly(vinylidene fluoride) (PVF) film protects solar cells on Mars surface from radiation and prevents degradation of solar cell surfaces by Martian dust storms. PVF films may replace glass or quartz windows on solar cell arrays used to generate power on earth.

  10. Silicon solar cells: Physical metallurgy principles

    NASA Astrophysics Data System (ADS)

    Mauk, Michael G.

    2003-05-01

    This article reviews the physical metallurgy aspects of silicon solar cells. The production of silicon solar cells relies on principles of thermochemical extractive metallurgy, phase equilibria, solidification, and kinetics. The issues related to these processes and their impact on solar cell performance and cost are discussed.

  11. A novel chlorophyll solar cell

    NASA Astrophysics Data System (ADS)

    Ludlow, J. C.

    The photosynthetic process is reviewed in order to produce a design for a chlorophyll solar cell. In a leaf, antenna chlorophyll absorbs light energy and conducts it to an energy trap composed of a protein and two chlorophyll molecules, which perform the oxidation-reduction chemistry. The redox potential of the trap changes from 0.4 to -0.6 V, which is sufficient to reduce nearby molecules with redox potentials in that range. The reduction occurs by transfer of an electron, and a chlorophyll solar cell would direct the transferred electron to a current carrier. Chlorophyll antenna and traps are placed on a metallic support immersed in an electron acceptor solution, and resulting electrons from exposure to light are gathered by a metallic current collector. Spinach chlorophyll extracted, purified, and applied in a cell featuring a Pt collector and an octane water emulsion resulted in intensity independent voltages.

  12. Nanostructured Materials for Solar Cells

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila; Raffaelle, Ryne; Castro, Stephanie; Fahey, S.; Gennett, T.; Tin, P.

    2003-01-01

    The use of both inorganic and organic nanostructured materials in producing high efficiency photovoltaics is discussed in this paper. Recent theoretical results indicate that dramatic improvements in device efficiency may be attainable through the use of semiconductor quantum dots in an ordinary p-i-n solar cell. In addition, it has also recently been demonstrated that quantum dots can also be used to improve conversion efficiencies in polymeric thin film solar cells. A similar improvement in these types of cells has also been observed by employing single wall carbon nanotubes. This relatively new carbon allotrope may assist both in the disassociation of excitons as well as carrier transport through the composite material. This paper reviews the efforts that are currently underway to produce and characterize these nanoscale materials and to exploit their unique properties.

  13. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    The handbook discusses the history of GaAs solar cell development, presents equations useful for working with GaAs solar cells, describes commonly used instrumentation techniques for assessing radiation effects in solar cells and fundamental processes occurring in solar cells exposed to ionizing radiation, and explains why radiation decreases the electrical performance of solar cells. Three basic elements required to perform solar array degradation calculations: degradation data for GaAs solar cells after irradiation with 1 MeV electrons at normal incidence; relative damage coefficients for omnidirectional electron and proton exposure; and the definition of the space radiation environment for the orbit of interest, are developed and used to perform a solar array degradation calculation.

  14. Towards stable silicon nanoarray hybrid solar cells

    PubMed Central

    He, W. W.; Wu, K. J.; Wang, K.; Shi, T. F.; Wu, L.; Li, S. X.; Teng, D. Y.; Ye, C. H.

    2014-01-01

    Silicon nanoarray hybrid solar cells benefit from the ease of fabrication and the cost-effectiveness of the hybrid structure, and represent a new research focus towards the utilization of solar energy. However, hybrid solar cells composed of both inorganic and organic components suffer from the notorious stability issue, which has to be tackled before the hybrid solar cells could become a viable alternative for harvesting solar energy. Here we show that Si nanoarray/PEDOT:PSS hybrid solar cells with improved stability can be fabricated via eliminating the water inclusion in the initial formation of the heterojunction between Si nanoarray and PEDOT:PSS. The Si nanoarray hybrid solar cells are stable against rapid degradation in the atmosphere environment for several months without encapsulation. This finding paves the way towards the real-world applications of Si nanoarray hybrid solar cells. PMID:24430057

  15. Mixed ternary heterojunction solar cell

    DOEpatents

    Chen, Wen S.; Stewart, John M.

    1992-08-25

    A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.

  16. Double-sided solar-cell package

    NASA Technical Reports Server (NTRS)

    Shelpuk, B.

    1978-01-01

    Cost-effective solar-cell package is proposed for development of practical solar-cell system. Since cells are enclosed in inexpensive plastic tubes, forced-air-cooling loop is proposed to maintain cell temperature at adequate levels. Loop must include desiccant to remove moisture from hermetic enclosures to prevent cell corrosion.

  17. Design Rules for Efficient Organic Solar Cells

    NASA Astrophysics Data System (ADS)

    Zhu, Z.; Mühlbacher, D.; Morana, M.; Koppe, M.; Scharber, M. C.; Waller, D.; Dennler, G.; Brabec, C. J.

    There has been an intensive search for cost-effective photovoltaics since the development of the first solar cells in the 1950s [1-3]. Among all the alternative technologies to silicon-based pn-junction solar cells, organic solar cells are the approach that could lead to the most significant cost reduction [4]. The field of organic photovoltaics (OPV) is composed of organic/inorganic nanostructures, like the dyesensitized solar cell, multilayers of small organic molecules and mixtures of organic materials (bulk-heterojunction solar cell). A review of several so-called organic photovoltaic (OPV) technologies was recently presented [5].

  18. Hybrid emitter all back contact solar cell

    DOEpatents

    Loscutoff, Paul; Rim, Seung

    2016-04-12

    An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

  19. 22. 8% efficient silicon solar cell

    SciTech Connect

    Blakers, A.W.; Wang, A.; Milne, A.M.; Zhao, J.; Green, M.A. )

    1989-09-25

    A new silicon solar cell structure, the passivated emitter and rear cell, is described. The cell structure has yielded independently confirmed efficiencies of up to 22.8%, the highest ever reported for a silicon cell.

  20. Compensated amorphous silicon solar cell

    DOEpatents

    Devaud, Genevieve

    1983-01-01

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

  1. High Temperature Solar Cell Development

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Raffaelle, Ryne P.; Merritt, Danielle

    2004-01-01

    The majority of satellites and near-earth probes developed to date have used photovoltaic arrays for power generation. If future mission to probe environments close to the sun will be able to use photovoltaic power, solar cells that can function at high temperatures, under high light intensity, and high radiation conditions must be developed. In this paper, we derive the optimum bandgap as a function of the operating temperature.

  2. Solar Cells for Lunar Application

    NASA Technical Reports Server (NTRS)

    Freundlich, Alex; Ignatiev, Alex

    1997-01-01

    In this work a preliminary study of the vacuum evaporation of silicon extracted from the lunar regolith has been undertaken. An electron gun vacuum evaporation system has been adapted for this purpose. Following the calibration of the system using ultra high purity silicon deposited on Al coated glass substrates, thin films of lunar Si were evaporated on a variety of crystalline substrates as well as on glass and lightweight 1 mil (25 microns) Al foil. Extremely smooth and featureless films with essentially semiconducting properties were obtained. Optical absorption analysis sets the bandgap (about 1.1 eV) and the refractive index (n=3.5) of the deposited thin films close to that of crystalline silicon. Secondary ion mass spectroscopy and energy dispersive spectroscopy analysis indicated that these films are essentially comparable to high purity silicon and that the evaporation process resulted in a substantial reduction of impurity levels. All layers exhibited a p-type conductivity suggesting the presence of a p-type dopant in the fabricated layers. While the purity of the 'lunar waste material' is below that of the 'microelectronic-grade silicon', the vacuum evaporated material properties seems to be adequate for the fabrication of average performance Si-based devices such as thin film solar cells. Taking into account solar cell thickness requirements (greater than 10 microns) and the small quantities of lunar material available for this study, solar cell fabrication was not possible. However, the high quality of the optical and electronic properties of evaporated thin films was found to be similar to those obtained using ultra-high purity silicon suggest that thin film solar cell production on the lunar surface with in situ resource utilization may be a viable approach for electric power generation on the moon.

  3. Silicon Carbide Solar Cells Investigated

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Raffaelle, Ryne P.

    2001-01-01

    The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

  4. High Efficiency Cascade Solar Cells

    SciTech Connect

    Shuguang Deng, Seamus Curran, Igor Vasiliev

    2010-09-28

    This report summarizes the main work performed by New Mexico State University and University of Houston on a DOE sponsored project High Efficiency Cascade Solar Cells. The main tasks of this project include materials synthesis, characterization, theoretical calculations, organic solar cell device fabrication and test. The objective of this project is to develop organic nano-electronic-based photovoltaics. Carbon nanotubes and organic conjugated polymers were used to synthesize nanocomposites as the new active semiconductor materials that were used for fabricating two device architectures: thin film coating and cascade solar cell fiber. Chemical vapor deposition technique was employed to synthesized a variety of carbon nanotubes (single-walled CNT, doubled-walled CNT, multi-walled CNT, N-doped SWCNT, DWCNT and MWCNT, and B-doped SWCNT, DWCNT and MWCNT) and a few novel carbon structures (CNT-based nanolance, nanocross and supported graphene film) that have potential applications in organic solar cells. Purification procedures were developed for removing amorphous carbons from carbon nanotubes, and a controlled oxidation method was established for partial truncation of fullerene molecules. Carbon nanotubes (DWCNT and DWCNT) were functionalized with fullerenes and dyes covalently and used to form nanocomposites with conjugated polymers. Biologically synthesized Tellurium nanotubes were used to form composite with the conjugated polymers as well, which generated the highest reported optical limiting values from composites. Several materials characterization technique including SEM/TEM, Raman, AFM, UV-vis, adsorption and EDS were employed to characterize the physical and chemical properties of the carbon nanotubes, the functionalized carbon nanotubes and the nanocomposites synthesized in this project. These techniques allowed us to have a spectroscopic and morphological control of the composite formation and to understand the materials assembled. A parallel 136-CPU

  5. Noise Diagnostics of Solar Cells

    NASA Astrophysics Data System (ADS)

    Koktavy, Pavel; Raska, Michal; Sadovsky, Petr; Krcal, Ondrej

    2007-07-01

    This paper deals with the use of micro-plasma noise for solar cells diagnostic purposes. When a high electric field is applied to a PN junction containing some technological imperfections, enhanced impact ionization arises in micro-sized regions, thus producing so-called micro-plasmas, which in turn can lead to the deterioration in quality or destruction of the PN junction. It is therefore advisable to use methods which can indicate the presence of micro-plasma in the junction and make the quality assessment and quantitative description of the tested cells possible.

  6. Three-junction solar cell

    DOEpatents

    Ludowise, Michael J.

    1986-01-01

    A photovoltaic solar cell is formed in a monolithic semiconductor. The cell contains three junctions. In sequence from the light-entering face, the junctions have a high, a medium, and a low energy gap. The lower junctions are connected in series by one or more metallic members connecting the top of the lower junction through apertures to the bottom of the middle junction. The upper junction is connected in voltage opposition to the lower and middle junctions by second metallic electrodes deposited in holes 60 through the upper junction. The second electrodes are connected to an external terminal.

  7. Recent Advances in Solar Cell Technology

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Bailey, Sheila G.; Piszczor, Michael F., Jr.

    1996-01-01

    The advances in solar cell efficiency, radiation tolerance, and cost over the last decade are reviewed. Potential performance of thin-film solar cells in space are discussed, and the cost and the historical trends in production capability of the photovoltaics industry are considered with respect to the requirements of space power systems. Concentrator cells with conversion efficiency over 30%, and nonconcentrating solar cells with efficiency over 25% are now available, and advanced radiation-tolerant cells and lightweight, thin-film arrays are both being developed. Nonsolar applications of solar cells, including thermophotovoltaics, alpha- and betavoltaics, and laser power receivers, are also discussed.

  8. Spectral sensitization of nanocrystalline solar cells

    DOEpatents

    Spitler, Mark T.; Ehret, Anne; Stuhl, Louis S.

    2002-01-01

    This invention relates to dye sensitized polycrystalline photoelectrochemical solar cells for use in energy transduction from light to electricity. It concerns the utility of highly absorbing organic chromophores as sensitizers in such cells and the degree to which they may be utilized alone and in combination to produce an efficient photoelectrochemical cell, e.g., a regenerative solar cell.

  9. Solar Coronal Cells as Seen by STEREO

    NASA Video Gallery

    The changes of a coronal cell region as solar rotation carries it across the solar disk as seen with NASA's STEREO-B spacecraft. The camera is fixed on the region (panning with it) and shows the pl...

  10. Extended Temperature Solar Cell Technology Development

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Jenkins, Phillip; Scheiman, David; Rafaelle, Ryne

    2004-01-01

    Future NASA missions will require solar cells to operate both in regimes closer to the sun, and farther from the sun, where the operating temperatures will be higher and lower than standard operational conditions. NASA Glenn is engaged in testing solar cells under extended temperature ranges, developing theoretical models of cell operation as a function of temperature, and in developing technology for improving the performance of solar cells for both high and low temperature operation.

  11. The advanced solar cell orbital test

    NASA Technical Reports Server (NTRS)

    Marvin, D. C.; Gates, M.

    1991-01-01

    The motivation for advanced solar cell flight experiments is discussed and the Advanced Solar Cell Orbital Test (ASCOT) flight experiment is described. Details of the types of solar cells included in the test and the kinds of data to be collected are given. The orbit will expose the cells to a sufficiently high radiation dose that useful degradation data will be obtained in the first year.

  12. Work Station For Inverting Solar Cells

    NASA Technical Reports Server (NTRS)

    Feder, H.; Frasch, W.

    1982-01-01

    Final work station along walking-beam conveyor of solar-array assembly line turns each pretabbed solar cell over, depositing it back-side-up onto landing pad, which centers cell without engaging collector surface. Solar cell arrives at inverting work station collector-side-up with two interconnect tabs attached to collector side. Cells are inverted so that second soldering operation takes place in plain view of operator. Inversion protects collector from damage when handled at later stages of assembly.

  13. Supramolecular photochemistry and solar cells

    PubMed

    Iha

    2000-01-01

    Supramolecular photochemistry as well as solar cells are fascinating topics of current interest in Inorganic Photochemistry and very active research fields which have attracted wide attention in last two decades. A brief outline of the investigations in these fields carried out in our Laboratory of Inorganic Photochemistry and Energy Conversion is given here with no attempt of an exhaustive coverage of the literature. The emphasis is placed on recent work and information on the above mentioned subjects. Three types of supramolecular systems have been the focus of this work: (i) cage-type coordination compounds; (ii) second-sphere coordination compounds, exemplified by ion-pair photochemistry of cobalt complexes and (iii) covalently-linked systems. In the latter, modulation of the photoluminescence and photochemistry of some rhenium complexes are discussed. Solar energy conversion and development of thin-layer photoelectrochemical solar cells based on sensitization of nanocrystalline semiconductor films by some ruthenium polypyridyl complexes are presented as an important application that resulted from specifically engineered artificial assemblies. PMID:10932106

  14. Energy Conversion: Nano Solar Cell

    NASA Astrophysics Data System (ADS)

    Yahaya, Muhammad; Yap, Chi Chin; Mat Salleh, Muhamad

    2009-09-01

    Problems of fossil-fuel-induced climate change have sparked a demand for sustainable energy supply for all sectors of economy. Most laboratories continue to search for new materials and new technique to generate clean energy at affordable cost. Nanotechnology can play a major role in solving the energy problem. The prospect for solar energy using Si-based technology is not encouraging. Si photovoltaics can produce electricity at 20-30 c//kWhr with about 25% efficiency. Nanoparticles have a strong capacity to absorb light and generate more electrons for current as discovered in the recent work of organic and dye-sensitized cell. Using cheap preparation technique such as screen-printing and self-assembly growth, organic cells shows a strong potential for commercialization. Thin Films research group at National University Malaysia has been actively involved in these areas, and in this seminar, we will present a review works on nanomaterials for solar cells and particularly on hybrid organic solar cell based on ZnO nanorod arrays. The organic layer consisting of poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEHPPV) and [6, 6]-phenyl C61-butyric acid 3-ethylthiophene ester (PCBE) was spin-coated on ZnO nanorod arrays. ZnO nanorod arrays were grown on FTO glass substrates which were pre-coated with ZnO nanoparticles using a low temperature chemical solution method. A gold electrode was used as the top contact. The device gave a short circuit current density of 2.49×10-4 mA/cm2 and an open circuit voltage of 0.45 V under illumination of a projector halogen light at 100 mW/cm2.

  15. Eutectic Contact Inks for Solar Cells

    NASA Technical Reports Server (NTRS)

    Ross, B.

    1985-01-01

    Low-resistance electrical contacts formed on solar cells by melting powders of eutectic composition of semiconductor and dopant. Process improves cell performance without subjecting cell to processing temperatures high enough to degrade other characteristics.

  16. Solar cell system having alternating current output

    NASA Technical Reports Server (NTRS)

    Evans, J. C., Jr. (Inventor)

    1980-01-01

    A monolithic multijunction solar cell was modified by fabricating an integrated circuit inverter on the back of the cell to produce a device capable of generating an alternating current output. In another embodiment, integrated curcuit power conditioning electronics was incorporated in a module containing a solar cell power supply.

  17. Search for new solar cell heats up

    SciTech Connect

    Lipkin, R.

    1990-11-05

    Researchers are in the process of developing an organic solar energy cell with a plasticlike material that simplifies the complicated process of creating a working cell - one that is cheap, easy to produce and has a variety of potential applications. The chemical is polyacetylene and can be painted on anything to become a solar cell.

  18. Ultrasonic Bonding of Solar-Cell Leads

    NASA Technical Reports Server (NTRS)

    Frasch, W.

    1984-01-01

    Rolling ultrasonic spot-bonding method successfully joins aluminum interconnect fingers to silicon solar cells with copper metalization. Technique combines best features of ultrasonic rotary seam welding and ultrasonic spot bonding: allows fast bond cycles and high indexing speeds without use of solder or flux. Achieves reliable bonds at production rates without damage to solar cells. Bonding system of interest for all solar-cell assemblies and other assemblies using flat leads (rather than round wires).

  19. New experimental techniques for solar cells

    NASA Technical Reports Server (NTRS)

    Lenk, R.

    1993-01-01

    Solar cell capacitance has special importance for an array controlled by shunting. Experimental measurements of solar cell capacitance in the past have shown disagreements of orders of magnitude. Correct measurement technique depends on maintaining the excitation voltage less than the thermal voltage. Two different experimental methods are shown to match theory well, and two effective capacitances are defined for quantifying the effect of the solar cell capacitance on the shunting system.

  20. Bypass diode for a solar cell

    SciTech Connect

    Rim, Seung Bum; Kim, Taeseok; Smith, David D.; Cousins, Peter J.

    2012-03-13

    Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

  1. Solar Cell Modules With Improved Backskin

    DOEpatents

    Gonsiorawski, Ronald C.

    2003-12-09

    A laminated solar cell module comprises a front light transmitting support, a plurality of interconnected solar cells encapsulated by a light-transmitting encapsulant material, and an improved backskin formed of an ionomer/nylon alloy. The improved backskin has a toughness and melting point temperature sufficiently great to avoid any likelihood of it being pierced by any of the components that interconnect the solar cells.

  2. Status of polycrystalline solar cell technologies

    NASA Astrophysics Data System (ADS)

    Kapur, Vijay K.; Basol, Bulent M.

    Thin-film cadmium telluride (CdTe) and thin-film copper indium diselenide (CIS) solar cells are discussed. The issues these technologies face before commercialization are addressed. High-efficiency (15-18 percent) polycrystalline silicon modules could dominate the market in the near future, and impressive results for thin-film CdTe and CIS solar cells and their outdoor stability can attract increased interest in these solar cells, which will accelerate their development.

  3. Improved monolithic tandem solar cell

    SciTech Connect

    Wanlass, M.W.

    1991-04-23

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surf ace of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched.

  4. Noise of Reverse Biased Solar Cells

    NASA Astrophysics Data System (ADS)

    Skarvada, P.; Macku, R.; Koktavy, P.; Raska, M.

    2009-04-01

    The non-destructive testing and analysis of single crystal silicon solar cell is the focal point of our research. The noise spectroscopy and I-V curve measurement of reverse biased pn junction provide information that is connected with solar cell reliability and that provide for not only local defect characterization. We propose a new electric solar cell model, as a base for an enhanced noise model, which is in accordance with the experimentally obtained I-V curves. We suggest the physical nature of an unconventional behavior in reverse I-V characteristics, which is typical for solar cells without apparent local avalanche breakdowns.

  5. Laser-assisted solar cell metallization processing

    NASA Technical Reports Server (NTRS)

    Rohatgi, A.; Gupta, S.; Mcmullin, P. G.; Palaschak, P. A.

    1985-01-01

    Laser-assisted processing techniques for producing high-quality solar cell metallization patterns are being investigated, developed, and characterized. The tasks comprising these investigations are outlined.

  6. Very High Efficiency Solar Cell Modules

    SciTech Connect

    Barnett, A.; Kirkpatrick, D.; Honsberg, C.; Moore, D.; Wanlass, M.; Emery, K.; Schwartz, R.; Carlson, D.; Bowden, S.; Aiken, D.; Gray, A.; Kurtz, S.; Kazmerski, L., et al

    2009-01-01

    The Very High Efficiency Solar Cell (VHESC) program is developing integrated optical system - PV modules for portable applications that operate at greater than 50% efficiency. We are integrating the optical design with the solar cell design, and have entered previously unoccupied design space. Our approach is driven by proven quantitative models for the solar cell design, the optical design, and the integration of these designs. Optical systems efficiency with an optical efficiency of 93% and solar cell device results under ideal dichroic splitting optics summing to 42.7 {+-} 2.5% are described.

  7. Front contact solar cell with formed emitter

    DOEpatents

    Cousins, Peter John

    2014-11-04

    A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

  8. Front contact solar cell with formed emitter

    DOEpatents

    Cousins, Peter John

    2012-07-17

    A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

  9. Monolithic and mechanical multijunction space solar cells

    SciTech Connect

    Jain, R.K.; Flood, D.J. )

    1993-05-01

    High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be realized by developing multijunction, multibandgap solar cells. Monolithic and mechanically stacked tandem solar cells surpassing single-junction cell efficiencies have been fabricated. This article surveys the current status of monolithic and mechanically stacked multibandgap space solar cells, and outlines problems yet to be resolved. The monolithic and mechanically stacked cells each have their own problems related to size, processing, current and voltage matching, weight, and other factors. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full-spectrum range simulators are also needed to measure efficiencies correctly. Cost issues are not addressed, since the two approaches are still in the developmental stage.

  10. Monolithic and mechanical multijunction space solar cells

    SciTech Connect

    Jain, R.K.; Flood, D.J.

    1992-08-01

    High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be realized by developing multijunction, multibandgap solar cells. Monolithic and mechanically stacked tandem solar cells surpassing single-junction cell efficiencies have been fabricated. This article surveys the current status of monolithic and mechanically stacked multibandgap space solar cells, and outlines problems yet to be resolved. The monolithic and mechanically stacked cells each have their own problems related to size, processing, current and voltage matching, weight, and other factors. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full-spectrum range simulators are also needed to measure efficiencies correctly. Cost issues are not addressed, since the two approaches are still in the developmental stage.

  11. Monolithic and mechanical multijunction space solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1992-01-01

    High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be realized by developing multijunction, multibandgap solar cells. Monolithic and mechanically stacked tandem solar cells surpassing single-junction cell efficiencies have been fabricated. This article surveys the current status of monolithic and mechanically stacked multibandgap space solar cells, and outlines problems yet to be resolved. The monolithic and mechanically stacked cells each have their own problems related to size, processing, current and voltage matching, weight, and other factors. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full-spectrum range simulators are also needed to measure efficiencies correctly. Cost issues are not addressed, since the two approaches are still in the developmental stage.

  12. Solar cell modules for plasma interaction evaluation

    NASA Technical Reports Server (NTRS)

    1981-01-01

    A plasma interaction analysis in support of the solar electric propulsion subsystem examined the effects of a large high voltage solar array interacting with an ion thruster produced plasma. Two solar array test modules consisting of 36 large area wraparound contact solar cells welded to a flexible Kapton integrated circuit substrate were abricated. The modules contained certain features of the effects of insulation, din-holes, and bonding of the cell to the substrate and a ground plane. The possibility of a significant power loss occurring due to the collection of charged particles on the solar array interconnects was the focus of the research.

  13. Method for processing silicon solar cells

    DOEpatents

    Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

    1997-05-06

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

  14. Method for processing silicon solar cells

    DOEpatents

    Tsuo, Y. Simon; Landry, Marc D.; Pitts, John R.

    1997-01-01

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

  15. Solar power satellites - Heat engine or solar cells

    NASA Technical Reports Server (NTRS)

    Oman, H.; Gregory, D. L.

    1978-01-01

    A solar power satellite is the energy-converting element of a system that can deliver some 10 GW of power to utilities on the earth's surface. We evaluated heat engines and solar cells for converting sunshine to electric power at the satellite. A potassium Rankine cycle was the best of the heat engines, and 50 microns thick single-crystal silicon cells were the best of the photovoltaic converters. Neither solar cells nor heat engines had a clear advantage when all factors were considered. The potassium-turbine power plant, however, was more difficult to assemble and required a more expensive orbital assembly base. We therefore based our cost analyses on solar-cell energy conversion, concluding that satellite-generated power could be delivered to utilities for around 4 to 5 cents a kWh.

  16. Coupling of Luminescent Solar Concentrators to Plasmonic Solar Cells

    NASA Astrophysics Data System (ADS)

    Wang, Shu-Yi

    To make inexpensive solar cells is a continuous goal for solar photovoltaic (PV) energy industry. Thin film solar cells of various materials have been developed and continue to emerge in order to replace bulk silicon solar cells. A thin film solar cell not only uses less material but also requires a less expensive refinery process. In addition, other advantages coming along with small thickness are higher open circuit voltage and higher conversion efficiency. However, thin film solar cells, especially those made of silicon, have significant optical losses. In order to address this problem, this thesis investigates the spectral coupling of thin films PV to luminescent solar concentrators (LSC). LSC are passive devices, consisting of plastic sheets embedded with fluorescent dyes which absorb part of the incoming radiation spectrum and emit at specific wavelength. The emitted light is concentrated by total internal reflection to the edge of the sheet, where the PVs are placed. Since the light emitted from the LSC edge is usually in a narrow spectral range, it is possible to employ diverse strategies to enhance PV absorption at the peak of the emission wavelength. Employing plasmonic nanostructures has been shown to enhance absorption of thin films via forward scattering, diffraction and localized surface plasmon. These two strategies are theoretically investigated here for improving the absorption and elevating the output power of a thin film solar cell. First, the idea of spectral coupling of luminescent solar concentrators to plasmonic solar cells is introduced to assess its potential for increasing the power output. This study is carried out employing P3HT/PC60BM organic solar cells and LSC with Lumogen Red dyes. A simplified spectral coupling analysis is employed to predict the power density, considering the output spectrum of the LSC equivalent to the emission spectrum of the dye and neglecting any angular dependence. Plasmonic tuning is conducted to enhance

  17. Current status of silicon solar cell technology

    NASA Technical Reports Server (NTRS)

    Brandhorst, H. W., Jr.

    1975-01-01

    In quest of higher efficiency, major progress has occurred in solar cell technology. Cell efficiency has climbed about 50 percent. Technical approaches leading to increased output include back surface fields, shallow junctions, improved antireflection coatings, surface texturizing, and fine grid patterns on the cell surface. The status of current solar cell technology and its incorporation into cell production is discussed. Research and development leading to improved performance and reduced cost are also described.

  18. Current and lattice matched tandem solar cell

    DOEpatents

    Olson, Jerry M.

    1987-01-01

    A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga.sub.x In.sub.1-x P (0.505.ltoreq.X.ltoreq.0.515) top cell semiconductor lattice matched to a GaAs bottom cell semiconductor at a low-resistance heterojunction, preferably a p+/n+ heterojunction between the cells. The top and bottom cells are both lattice matched and current matched for high efficiency solar radiation conversion to electrical energy.

  19. Plasmon Enhanced Hetero-Junction Solar Cell

    NASA Astrophysics Data System (ADS)

    Long, Gen; Ching, Levine; Sadoqi, Mostafa; Xu, Huizhong

    2015-03-01

    Here we report a systematic study of plasmon-enhanced hetero-junction solar cells made of colloidal quantum dots (PbS) and nanowires (ZnO), with/without metal nanoparticles (Au). The structure of solar cell devices was characterized by AFM, SEM and profilometer, etc. The power conversion efficiencies of solar cell devices were characterized by solar simulator (OAI TriSOL, AM1.5G Class AAA). The enhancement in the photocurrent due to introduction of metal nanoparticles was obvious. We believe this is due to the plasmonic effect from the metal nanoparticles. The correlation between surface roughness, film uniformity and device performance was also studied.

  20. Ga-rich GaxIn1-xP solar cells on Si with 1.95 eV bandgap for ideal III-V/Si photovoltaics

    NASA Astrophysics Data System (ADS)

    Ratcliff, Christopher; Grassman, T. J.; Carlin, J. A.; Chmielewski, D. J.; Ringel, S. A.

    2014-03-01

    Theoretical models for III-V compound multijunction solar cells show that solar cells with bandgaps of 1.95-2.3 eV are needed to create ideal optical partitioning of the solar spectrum for device architectures containing three, four and more junctions. For III-V solar cells integrated with an active Si sub-cell, GaInP alloys in the Ga-rich regime are ideal since direct bandgaps of up to ~ 2.25 eV are achieved at lattice constants that can be integrated with appropriate GaAsP, SiGe and Si materials, with efficiencies of almost 50% being predicted using practical solar cell models under concentrated sunlight. Here we report on Ga-rich, lattice-mismatched Ga0.57In0.43P sub-cell prototypes with a bandgap of 1.95 eV grown on tensile step-graded metamorphic GaAsyP1-y buffers on GaAs substrates. The goal is to create a high bandgap top cell for integration with Si-based III-V/Si triple-junction devices. Excellent carrier collection efficiency was measured via internal quantum efficiency measurements and with their design being targeted for multijunction implementation (i.e. they are too thin for single junction cells), initial cell results are encouraging. The first generation of identical 1.95 eV cells on Si were fabricated as well, with efficiencies for these large bandgap, thin single junction cells ranging from 7% on Si to 11% on GaAs without antireflection coatings, systematically tracking the change in defect density as a function of growth substrate.

  1. Perovskite Solar Cells with Large-Area CVD-Graphene for Tandem Solar Cells.

    PubMed

    Lang, Felix; Gluba, Marc A; Albrecht, Steve; Rappich, Jörg; Korte, Lars; Rech, Bernd; Nickel, Norbert H

    2015-07-16

    Perovskite solar cells with transparent contacts may be used to compensate for thermalization losses of silicon solar cells in tandem devices. This offers a way to outreach stagnating efficiencies. However, perovskite top cells in tandem structures require contact layers with high electrical conductivity and optimal transparency. We address this challenge by implementing large-area graphene grown by chemical vapor deposition as a highly transparent electrode in perovskite solar cells, leading to identical charge collection efficiencies. Electrical performance of solar cells with a graphene-based contact reached those of solar cells with standard gold contacts. The optical transmission by far exceeds that of reference devices and amounts to 64.3% below the perovskite band gap. Finally, we demonstrate a four-terminal tandem device combining a high band gap graphene-contacted perovskite top solar cell (Eg = 1.6 eV) with an amorphous/crystalline silicon bottom solar cell (Eg = 1.12 eV). PMID:26266857

  2. Monolithic cells for solar fuels.

    PubMed

    Rongé, Jan; Bosserez, Tom; Martel, David; Nervi, Carlo; Boarino, Luca; Taulelle, Francis; Decher, Gero; Bordiga, Silvia; Martens, Johan A

    2014-12-01

    Hybrid energy generation models based on a variety of alternative energy supply technologies are considered the best way to cope with the depletion of fossil energy resources and to limit global warming. One of the currently missing technologies is the mimic of natural photosynthesis to convert carbon dioxide and water into chemical fuel using sunlight. This idea has been around for decades, but artificial photosynthesis of organic molecules is still far away from providing real-world solutions. The scientific challenge is to perform in an efficient way the multi-electron transfer reactions of water oxidation and carbon dioxide reduction using holes and single electrons generated in an illuminated semiconductor. In this tutorial review the design of photoelectrochemical (PEC) cells that combine solar water oxidation and CO2 reduction is discussed. In such PEC cells simultaneous transport and efficient use of light, electrons, protons and molecules has to be managed. It is explained how efficiency can be gained by compartmentalisation of the water oxidation and CO2 reduction processes by proton exchange membranes, and monolithic concepts of artificial leaves and solar membranes are presented. Besides transferring protons from the anode to the cathode compartment the membrane serves as a molecular barrier material to prevent cross-over of oxygen and fuel molecules. Innovative nano-organized multimaterials will be needed to realise practical artificial photosynthesis devices. This review provides an overview of synthesis techniques which could be used to realise monolithic multifunctional membrane-electrode assemblies, such as Layer-by-Layer (LbL) deposition, Atomic Layer Deposition (ALD), and porous silicon (porSi) engineering. Advances in modelling approaches, electrochemical techniques and in situ spectroscopies to characterise overall PEC cell performance are discussed. PMID:24526085

  3. Amorphous silicon solar cell allowing infrared transmission

    DOEpatents

    Carlson, David E.

    1979-01-01

    An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

  4. Low-Reflectance Surfaces For Solar Cells

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Landis, Geoffrey A.; Fatemi, Navid; Jenkins, Phillip P.

    1994-01-01

    Improved method for increasing solar cell efficiency has potential application for space-based and terrestrial solar power systems and optoelectronic devices. Etched low-angle grooves help recover reflected light. Light reflected from v-grooved surface trapped in cover glass and adhesive by total internal reflection. Reflected light redirected onto surface, and greater fraction of incident light absorbed, producing more electrical energy in InP solar photovoltaic cell.

  5. Si concentrator solar cell development. [Final report

    SciTech Connect

    Krut, D.D.

    1994-10-01

    This is the final report of a program to develop a commercial, high-efficiency, low-cost concentrator solar cell compatible with Spectrolab`s existing manufacturing infrastructure for space solar cells. The period covered is between 1991 and 1993. The program was funded through Sandia National Laboratories through the DOE concentrator initiative and, was also cost shared by Spectrolab. As a result of this program, Spectrolab implemented solar cells achieving an efficiency of over 19% at 200 to 300X concentration. The cells are compatible with DOE guidelines for a cell price necessary to achieve a cost of electricity of 12 cents a kilowatthour.

  6. Monolithic cascade-type solar cells

    NASA Technical Reports Server (NTRS)

    Yamamoto, S.; Shibukawa, A.; Yamaguchi, M.

    1985-01-01

    Solar cells consist of a semiconductor base, a bottom cell with a band-gap energy of E1, and a top cell with a band-gap energy of E2, and 0.96 E1 1.36 eV and (0.80 E + 0.77) eV E2 (0.80 E1 + 0.92) eV. A monolithic cascade-type solar cell was prepared with an n(+)-type GaAs base, a GaInAs bottom solar cell, and a GaAiInAs top solar cell. The surface of the cell is coated with a SiO antireflection film. The efficiency of the cell is 32%.

  7. Perovskite solar cells: Different facets of performance

    NASA Astrophysics Data System (ADS)

    Eperon, Giles E.; Ginger, David S.

    2016-08-01

    The electronic properties of halide perovskites vary significantly between crystalline grains, but the impact of this heterogeneity on solar cell performance is unclear. Now, this variability is shown to limit the photovoltaic properties of solar cells, and its origins are linked to differing properties between crystal facets.

  8. Introduction to basic solar cell measurements

    NASA Technical Reports Server (NTRS)

    Brandhorst, H. W., Jr.

    1976-01-01

    The basic approaches to solar cell performance and diagnostic measurements are described. The light sources, equipment for I-V curve measurement, and the test conditions and procedures for performance measurement are detailed. Solar cell diagnostic tools discussed include analysis of I-V curves, series resistance and reverse saturation current determination, spectral response/quantum yield measurement, and diffusion length/lifetime determination.

  9. Theory of bifacial sunlit silicon solar cells

    NASA Astrophysics Data System (ADS)

    Gasparyan, Ferdinand V.; Aroutiounian, Vladimir M.

    2001-11-01

    Bifacial sunlit solar cells made of silicon p+nn+ structures are investigated theoretically. It is shown that the short circuit current, open circuit voltage, fill-factor and efficiency strongly depend on both p+n junction parameters and n+n isojunction. Possibilities of manufacturing high-efficiency bifacial solar cells using silicon p+nn+ structures are discussed.

  10. Double-sided solar cell package

    NASA Technical Reports Server (NTRS)

    Shelpuk, B. (Inventor)

    1979-01-01

    In a solar cell array of terrestrial use, an improved double-sided solar cell package, consisting of a photovoltaic cell having a metallized P-contact strip and an N-contact grid, provided on opposite faces of the cell, a transparent tubular body forming an enclosure for the cell. A pedestal supporting the cell from within the enclosure comprising an electrical conductor connected with the P-contact strip provided for each face of the cell, and a reflector having an elongated reflective surface disposed in substantially opposed relation with one face of the cell for redirecting light were also included.

  11. A simplified solar cell array modelling program

    NASA Technical Reports Server (NTRS)

    Hughes, R. D.

    1982-01-01

    As part of the energy conversion/self sufficiency efforts of DSN engineering, it was necessary to have a simplified computer model of a solar photovoltaic (PV) system. This article describes the analysis and simplifications employed in the development of a PV cell array computer model. The analysis of the incident solar radiation, steady state cell temperature and the current-voltage characteristics of a cell array are discussed. A sample cell array was modelled and the results are presented.

  12. Fullerene surfactants and their use in polymer solar cells

    SciTech Connect

    Jen, Kwan-Yue; Yip, Hin-Lap; Li, Chang-Zhi

    2015-12-15

    Fullerene surfactant compounds useful as interfacial layer in polymer solar cells to enhance solar cell efficiency. Polymer solar cell including a fullerene surfactant-containing interfacial layer intermediate cathode and active layer.

  13. Bonder for Solar-Cell Strings

    NASA Technical Reports Server (NTRS)

    Garwood, G.; Frasch, W.

    1982-01-01

    String bonder for solar-cell arrays eliminates tedious manual assembly procedure that could damage cell face. Vacuum arm picks up face-down cell from cell-inverting work station and transfers it to string conveyor without changing cell orientation. Arm is activated by signal from microprocessor.

  14. Epitaxial silicon growth for solar cells

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Richman, D.

    1979-01-01

    The epitaxial procedures, solar cell fabrication, and evaluation techniques are described. The development of baseline epitaxial solar cell structures grown on high quality conventional silicon substrates is discussed. Diagnostic layers and solar cells grown on four potentially low cost silicon substrates are considered. The crystallographic properties of such layers and the performance of epitaxially grown solar cells fabricated on these materials are described. An advanced epitaxial reactor, the rotary disc, is described along with the results of growing solar cell structures of the baseline type on low cost substrates. The add on cost for the epitaxial process is assessed and the economic advantages of the epitaxial process as they relate to silicon substrate selection are examined.

  15. Nanowire-based All Oxide Solar Cells

    SciTech Connect

    Yang*, Benjamin D. Yuhas and Peidong; Yang, Peidong

    2008-12-07

    We present an all-oxide solar cell fabricated from vertically oriented zinc oxide nanowires and cuprous oxide nanoparticles. Our solar cell consists of vertically oriented n-type zinc oxide nanowires, surrounded by a film constructed from p-type cuprous oxide nanoparticles. Our solution-based synthesis of inexpensive and environmentally benign oxide materials in a solar cell would allow for the facile production of large-scale photovoltaic devices. We found that the solar cell performance is enhanced with the addition of an intermediate oxide insulating layer between the nanowires and the nanoparticles. This observation of the important dependence of the shunt resistance on the photovoltaic performance is widely applicable to any nanowire solar cell constructed with the nanowire array in direct contact with one electrode.

  16. High Radiation Resistance IMM Solar Cell

    NASA Technical Reports Server (NTRS)

    Pan, Noren

    2015-01-01

    Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

  17. Methodologies for high efficiency perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Park, Nam-Gyu

    2016-06-01

    Since the report on long-term durable solid-state perovskite solar cell in 2012, perovskite solar cells based on lead halide perovskites having organic cations such as methylammonium CH3NH3PbI3 or formamidinium HC(NH2)2PbI3 have received great attention because of superb photovoltaic performance with power conversion efficiency exceeding 22 %. In this review, emergence of perovskite solar cell is briefly introduced. Since understanding fundamentals of light absorbers is directly related to their photovoltaic performance, opto-electronic properties of organo lead halide perovskites are investigated in order to provide insight into design of higher efficiency perovskite solar cells. Since the conversion efficiency of perovskite solar cell is found to depend significantly on perovskite film quality, methodologies for fabricating high quality perovskite films are particularly emphasized, including various solution-processes and vacuum deposition method.

  18. Silicon film solar cell process

    NASA Technical Reports Server (NTRS)

    Hall, R. B.; Mcneely, J. B.; Barnett, A. M.

    1984-01-01

    The most promising way to reduce the cost of silicon in solar cells while still maintaining performance is to utilize thin films (10 to 20 microns thick) of crystalline silicon. The method of solution growth is being employed to grow thin polycrystalline films of silicon on dissimilar substrates. The initial results indicate that, using tin as the solvent, this growth process only requires operating temperatures in the range of 800 C to 1000 C. Growth rates in the range of 0.4 to 2.0 microns per minute and grain sizes in the range of 20 to 100 microns were achieved on both quartz and coated steel substrates. Typically, an aspect ratio of two to three between the width and the Si grain thickness is seen. Uniform coverage of Si growth on quartz over a 2.5 x 2.5 cm area was observed.

  19. Coating Processes Boost Performance of Solar Cells

    NASA Technical Reports Server (NTRS)

    2012-01-01

    NASA currently has spacecraft orbiting Mercury (MESSENGER), imaging the asteroid Vesta (Dawn), roaming the red plains of Mars (the Opportunity rover), and providing a laboratory for humans to advance scientific research in space (the International Space Station, or ISS). The heart of the technology that powers those missions and many others can be held in the palm of your hand - the solar cell. Solar, or photovoltaic (PV), cells are what make up the panels and arrays that draw on the Sun s light to generate electricity for everything from the Hubble Space Telescope s imaging equipment to the life support systems for the ISS. To enable NASA spacecraft to utilize the Sun s energy for exploring destinations as distant as Jupiter, the Agency has invested significant research into improving solar cell design and efficiency. Glenn Research Center has been a national leader in advancing PV technology. The Center s Photovoltaic and Power Technologies Branch has conducted numerous experiments aimed at developing lighter, more efficient solar cells that are less expensive to manufacture. Initiatives like the Forward Technology Solar Cell Experiments I and II in which PV cells developed by NASA and private industry were mounted outside the ISS have tested how various solar technologies perform in the harsh conditions of space. While NASA seeks to improve solar cells for space applications, the results are returning to Earth to benefit the solar energy industry.

  20. High-Temperature Solar Cell Development

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Raffaelle, Ryne P.; Merritt, Danielle

    2004-01-01

    The vast majority of satellites and near-earth probes developed to date have relied upon photovoltaic power generation. If future missions to probe environments close to the sun will be able to use photovoltaic power, solar cells that can function at high temperatures, under high light intensity, and high radiation conditions must be developed. For example, the equilibrium temperature of a Mercury surface station will be about 450 C, and the temperature of solar arrays on the proposed "Solar Probe" mission will extend to temperatures as high as 2000 C (although it is likely that the craft will operate on stored power rather than solar energy during the closest approach to the sun). Advanced thermal design principles, such as replacing some of the solar array area with reflectors, off-pointing, and designing the cells to reflect rather than absorb light out of the band of peak response, can reduce these operating temperature somewhat. Nevertheless, it is desirable to develop approaches to high-temperature solar cell design that can operate under temperature extremes far greater than today's cells. Solar cells made from wide bandgap (WBG) compound semiconductors are an obvious choice for such an application. In order to aid in the experimental development of such solar cells, we have initiated a program studying the theoretical and experimental photovoltaic performance of wide bandgap materials. In particular, we have been investigating the use of GaP, SiC, and GaN materials for space solar cells. We will present theoretical results on the limitations on current cell technologies and the photovoltaic performance of these wide-bandgap solar cells in a variety of space conditions. We will also give an overview of some of NASA's cell developmental efforts in this area and discuss possible future mission applications.

  1. Porphyrin-sensitized solar cells.

    PubMed

    Li, Lu-Lin; Diau, Eric Wei-Guang

    2013-01-01

    Nature has chosen chlorophylls in plants as antennae to harvest light for the conversion of solar energy in complicated photosynthetic processes. Inspired by natural photosynthesis, scientists utilized artificial chlorophylls - the porphyrins - as efficient centres to harvest light for solar cells sensitized with a porphyrin (PSSC). After the first example appeared in 1993 of a porphyrin of type copper chlorophyll as a photosensitizer for PSSC that achieved a power conversion efficiency of 2.6%, no significant advance of PSSC was reported until 2005; beta-linked zinc porphyrins were then reported to show promising device performances with a benchmark efficiency of 7.1% reported in 2007. Meso-linked zinc porphyrin sensitizers in the first series with a push-pull framework appeared in 2009; the best cell performed comparably to that of a N3-based device, and a benchmark 11% was reported for a porphyrin sensitizer of this type in 2010. With a structural design involving long alkoxyl chains to envelop the porphyrin core to suppress the dye aggregation for a push-pull zinc porphyrin, the PSSC achieved a record 12.3% in 2011 with co-sensitization of an organic dye and a cobalt-based electrolyte. The best PSSC system exhibited a panchromatic feature for light harvesting covering the visible spectral region to 700 nm, giving opportunities to many other porphyrins, such as fused and dimeric porphyrins, with near-infrared absorption spectral features, together with the approach of molecular co-sensitization, to enhance the device performance of PSSC. According to this historical trend for the development of prospective porphyrin sensitizers used in PSSC, we review systematically the progress of porphyrins of varied kinds, and their derivatives, applied in PSSC with a focus on reports during 2007-2012 from the point of view of molecular design correlated with photovoltaic performance. PMID:23023240

  2. Tandem photovoltaic solar cells and increased solar energy conversion efficiency

    NASA Technical Reports Server (NTRS)

    Loferski, J. J.

    1976-01-01

    Tandem photovoltaic cells, as proposed by Jackson (1955) to increase the efficiency of solar energy conversion, involve the construction of a system of stacked p/n homojunction photovoltaic cells composed of different semiconductors. It had been pointed out by critics, however, that the total power which could be extracted from the cells in the stack placed side by side was substantially greater than the power obtained from the stacked cells. A reexamination of the tandem cell concept in view of the development of the past few years is conducted. It is concluded that the use of tandem cell systems in flat plate collectors, as originally envisioned by Jackson, may yet become feasible as a result of the development of economically acceptable solar cells for large scale terrestrial power generation.

  3. Solar Cell Panel and the Method for Manufacturing the Same

    NASA Technical Reports Server (NTRS)

    Richards, Benjamin C. (Inventor); Sarver, Charles F. (Inventor); Naidenkova, Maria (Inventor)

    2016-01-01

    According to an aspect of an embodiment of the present disclosure, there is provided a solar cell panel and a method for manufacturing the same. The solar cell panel comprises: a solar cell for generating electric power from sunlight; a coverglass for covering the solar cell; transparent shims, which are disposed between the solar cell and the coverglass at the points where the distance between the solar cell and the coverglass needs to be controlled, and form a space between the solar cell and the coverglass; and adhesive layer, which fills the space between the solar cell and the coverglass and has the thickness the same as that of the transparent shims.

  4. Semiconductor quantum dot-sensitized solar cells

    PubMed Central

    Tian, Jianjun; Cao, Guozhong

    2013-01-01

    Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future. PMID:24191178

  5. Research on crystalline silicon solar cells

    SciTech Connect

    Milstein, J.B.; Tsuo, Y.S.

    1984-06-01

    Since the 16th IEEE Photovoltaic Specialists Conference, the focus of the Crystalline Silicon Solar Cell Task at the Solar Energy Research Institute (SERI) has narrowed somewhat. Responsibility for silicon material preparation and ribbon growth were consolidated at the Jet Propulsion Laboratory (JPL) at the end of FY 1983. Five subcontracts were awarded under RFP No. RB-2-02090, Research on Basic Understanding of High Efficiency in Silicon Solar Cells. JPL and Oak Ridge National Laboratory are also working on high-efficiency solar cell research under SERI subcontract. Reports of past solar cell improvements have prompted appreciable interest in the physical, chemical, and electrical transport properties of grain boundaries and other electrically active defects. Studies to achieve better understanding of the hydrogen passivation process are being conducted at various subcontractors, and our in-house research continues. This paper presents the results of these efforts as well as future directions.

  6. LDEF solar cell radiation effects analysis

    NASA Technical Reports Server (NTRS)

    Rives, Carol J.; Azarewicz, Joseph L.; Massengill, Lloyd

    1993-01-01

    Because of the extended time that the Long Duration Exposure Facility (LDEF) mission stayed in space, the solar cells on the satellite experienced greater environments than originally planned. The cells showed an overall degradation in performance that is due to the combined effects of the various space environments. The purpose of this analysis is to calculate the effect of the accumulated radiation on the solar cells, thereby helping Marshall Space Flight Center (MSFC) to unravel the relative power degradation from the different environments.

  7. Development of gallium arsenide solar cells

    NASA Technical Reports Server (NTRS)

    1973-01-01

    The potential of ion implantation as a means of developing gallium arsenide solar cells with high efficiency performance was investigated. Computer calculations on gallium arsenide cell characteristics are presented to show the effects of surface recombination, junction space-charge recombination, and built-in fields produced by nonuniform doping of the surface region. The fabrication technology is summarized. Electrical and optical measurements on samples of solar cells are included.

  8. Silicon solar cells improved by lithium doping

    NASA Technical Reports Server (NTRS)

    Berman, P. A.

    1970-01-01

    Results of conference on characteristics of lithium-doped silicon solar cells and techniques required for fabrication indicate that output of cells has been improved to point where cells exhibit radiation resistance superior to those currently in use, and greater control and reproducibility of cell processing have been achieved.

  9. Organic Tandem Solar Cells: Design and Formation

    NASA Astrophysics Data System (ADS)

    Chen, Chun-Chao

    In the past decade, research on organic solar cells has gone through an important development stage leading to major enhancements in power conversion efficiency, from 4% to 9% in single-junction devices. During this period, there are many novel processing techniques and device designs that have been proposed and adapted in organic solar-cell devices. One well-known device architecture that helps maximize the solar cell efficiency is the multi-junction tandem solar-cell design. Given this design, multiple photoactive absorbers as subcells are stacked in a monolithic fashion and assembled via series connection into one complete device, known as the tandem solar cell. Since multiple absorbers with different optical energy bandgaps are being applied in one tandem solar-cell device, the corresponding solar cell efficiency is maximized through expanded absorption spectrum and reduced carrier thermalization loss. In Chapter 3, the architecture of solution-processible, visibly transparent solar cells is introduced. Unlike conventional organic solar-cell devices with opaque electrodes (such as silver, aluminum, gold and etc.), the semi-transparent solar cells rely on highly transparent electrodes and visibly transparent photoactive absorbers. Given these two criteria, we first demonstrated the visibly transparent single-junction solar cells via the polymer absorber with near-infrared absorption and the top electrode based on solution-processible silver nanowire conductor. The highest visible transparency (400 ˜ 700 nm) of 65% was achieved for the complete device structure. More importantly, power conversion efficiency of 4% was also demonstrated. In Chapter 4, we stacked two semi-transparent photoactive absorbers in the tandem architecture in order to realize the semi-transparent tandem solar cells. A noticeable performance improvement from 4% to 7% was observed. More importantly, we modified the interconnecting layers with the incorporation of a thin conjugated

  10. JPL lithium doped solar cell development program

    NASA Technical Reports Server (NTRS)

    Berman, P. A.

    1972-01-01

    One of the most significant problems encountered in the use of silicon solar cells in space is the sensitivity of the device to electron and proton radiation exposure. The p-diffused-into-n-base solar cells were replaced with the more radiation tolerant n-diffused-into-p-base solar cells. Another advancement in achieving greater radiation tolerance was the discovery that the addition of lithium to n-base silicon resulted in what appeared to be annealing of radiation-induced defects. This phenomenon is being exploited to develop a high efficiency radiation resistant lithium-doped solar cell. Lithium-doped solar cells fabricated from oxygen-lean and oxygen-rich silicon were obtained with average initial efficiencies of 11.9% at air mass zero and 28 C, as compared to state-of-the-art n-p cells fabricated from 10 ohm cm silicon with average efficiencies of 11.3% under similar conditions. Lithium-doped cells demonstrated the ability to withstand three to five times the fluence of 1-MeV electrons before degrading to a power equivalent to state-of-the-art solar cells. The principal investigations are discussed with respect to fabrication of high efficiency radiation resistant lithium-doped cells, including starting material, p-n junction diffusion, lithium source introduction, and lithium diffusion.

  11. Electron irradiation of modern solar cells

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.; Miyahira, T. F.

    1977-01-01

    A number of modern solar cell types representing 1976 technology (as well as some older types) were irradiated with 1 MeV electrons (and a limited number with 2 MeV electrons and 10 MeV protons). After irradiation, the cells were annealed, with I-V curves measured under AMO at 30 C. The purpose was to provide data to be incorporated in the revision of the solar cell radiation handbook. Cell resistivities ranged from 2 to 20 ohm-cm, and cell thickness from 0.05 to 0.46 mm. Cell types examined were conventional, shallow junction, back surface field (BSF), textured, and textured with BSF.

  12. Development of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Mcnally, P. J.

    1972-01-01

    Calculations of GaAs solar cell output parameters were refined and a computer model was developed for parameter optimization. The results were analyzed to determine the material characteristics required for a high efficiency solar cell. Calculated efficiencies for a P/N cell polarity are higher than an N/P cell. Both cell polarities show efficiency to have a larger dependence on short circuit current than an open circuit voltage under nearly all conditions considered. The tolerances and requirements of a cell fabrication process are more critical for an N/P type than for a P/N type cell. Several solar cell fabrication considerations relative to junction formation using ion implantation are also discussed.

  13. Heterojunction solar cell with passivated emitter surface

    DOEpatents

    Olson, J.M.; Kurtz, S.R.

    1994-05-31

    A high-efficiency heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer. 1 fig.

  14. Bypass diode for a solar cell

    DOEpatents

    Rim, Seung Bum; Kim, Taeseok; Smith, David D; Cousins, Peter J

    2013-11-12

    Methods of fabricating bypass diodes for solar cells are described. In once embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed on the first conductive region. In another embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed within, and surrounded by, an uppermost portion of the first conductive region but is not formed in a lowermost portion of the first conductive region.

  15. Heterojunction solar cell with passivated emitter surface

    DOEpatents

    Olson, Jerry M.; Kurtz, Sarah R.

    1994-01-01

    A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

  16. Solar Cell Production using UMG Silicon

    SciTech Connect

    Hovel, Harold; Prettyman, Kevin

    2009-09-21

    Materials studies and solar cells made from various blends of UMG Si are compared with reference solar (PV) grade in terms of efficiencies, voltages, currents, diffusion lengths, minority carrier lifetimes and compositions. The UMG material used in this study performed unexpectedly well when used in cells manufactured both in a lab environment and on a commercial PV line. The limited number of cells of each composition does not support a full statistical analysis. However in comparing solar efficiencies, it is clear that a relatively minor delta exists between UMG blends and the particular PV grade material used in this study. That delta is between zero and 0.5 percentage points.

  17. Solar cell with silicon oxynitride dielectric layer

    SciTech Connect

    Shepherd, Michael; Smith, David D

    2015-04-28

    Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0

  18. Thermodynamic efficiency limit of excitonic solar cells

    SciTech Connect

    Giebink, Noel C.; Wiederrecht, Gary P.; Wasielewski, Michael R.; Forrest, Stephen R.

    2011-01-01

    Excitonic solar cells, comprised of materials such as organic semiconductors, inorganic colloidal quantum dots, and carbon nanotubes, are fundamentally different than crystalline, inorganic solar cells in that photogeneration of free charge occurs through intermediate, bound exciton states. Here, we show that the Second Law of Thermodynamics limits the maximum efficiency of excitonic solar cells below the maximum of 31% established by Shockley and Queisser [J. Appl. Phys. 32, 510 (1961)] for inorganic solar cells (whose exciton-binding energy is small). In the case of ideal heterojunction excitonic cells, the free energy for charge transfer at the interface, ΔG, places an additional constraint on the limiting efficiency due to a fundamental increase in the recombination rate, with typical -ΔG in the range 0.3 to 0.5 eV decreasing the maximum efficiency to 27% and 22%, respectively.

  19. Optical models for silicon solar cells

    SciTech Connect

    Marshall, T.; Sopori, B.

    1995-08-01

    Light trapping is an important design feature for high-efficiency silicon solar cells. Because light trapping can considerably enhance optical absorption, a thinner substrate can be used which, in turn, can lower the bulk carrier recombination and concommitantly increase open-circuit voltage, and fill factor of the cell. The basic concepts of light trapping are similar to that of excitation of an optical waveguide, where a prism or a grating structure increases the phase velocity of the incoming optical wave such that waves propagated within the waveguide are totally reflected at the interfaces. Unfortunately, these concepts break down because the entire solar cell is covered with such a structure, making it necessary to develop new analytical approaches to deal with incomplete light trapping in solar cells. This paper describes two models that analyze light trapping in thick and thin solar cells.

  20. Temperature coefficients of multijunction solar cells

    NASA Technical Reports Server (NTRS)

    Virshup, G. F.; Chung, B.-C.; Ladle Ristow, M.; Kuryla, M. S.; Brinker, D.

    1990-01-01

    Temperature coefficients measured in solar simulators with those measured under AM0 solar illumination are compared to illustrate the challenges in making these measurements. It is shown that simulator measurements of the short-circuit current (delta Jsc/delta T) are inaccurate due to the mismatch between the solar spectrum and the simulators at the bandgaps of the solar cells. Especially susceptible to error is the delta Jsc/delta T of cells which are components in monolithic multijunction solar cells, such as GaAs filtered by 1.93-eV AlGaAs, which has an AM0 coefficient of 6.82 micro-A/sq cm/deg C, compared to a Xenon simulator coefficient of 22.2 micro-A/sq cm/deg C.

  1. Cascade solar cell having conductive interconnects

    DOEpatents

    Borden, Peter G.; Saxena, Ram R.

    1982-10-26

    Direct ohmic contact between the cells in an epitaxially grown cascade solar cell is obtained by means of conductive interconnects formed through grooves etched intermittently in the upper cell. The base of the upper cell is directly connected by the conductive interconnects to the emitter of the bottom cell. The conductive interconnects preferably terminate on a ledge formed in the base of the upper cell.

  2. Solar cell with a gallium nitride electrode

    DOEpatents

    Pankove, Jacques I.

    1979-01-01

    A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

  3. Apollony photonic sponge based photoelectrochemical solar cells.

    PubMed

    Ramiro-Manzano, Fernando; Atienzar, Pedro; Rodriguez, Isabelle; Meseguer, Francisco; Garcia, Hermenegildo; Corma, Avelino

    2007-01-21

    We have developed a quasi-fractal colloidal crystal to localize efficiently photons in a very broad optical spectral range; it has been applied to prepare dye sensitized photoelectrochemical solar (PES) cells able to harvest very efficiently photons from the ultraviolet (UV) and the visible (VIS) regions of the solar spectrum. PMID:17299626

  4. Indium oxide/n-silicon heterojunction solar cells

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  5. Solar cell anomaly detection method and apparatus

    NASA Technical Reports Server (NTRS)

    Miller, Emmett L. (Inventor); Shumka, Alex (Inventor); Gauthier, Michael K. (Inventor)

    1981-01-01

    A method is provided for detecting cracks and other imperfections in a solar cell, which includes scanning a narrow light beam back and forth across the cell in a raster pattern, while monitoring the electrical output of the cell to find locations where the electrical output varies significantly. The electrical output can be monitored on a television type screen containing a raster pattern with each point on the screen corresponding to a point on the solar cell surface, and with the brightness of each point on the screen corresponding to the electrical output from the cell which was produced when the light beam was at the corresponding point on the cell. The technique can be utilized to scan a large array of interconnected solar cells, to determine which ones are defective.

  6. Method of fabricating solar cells

    SciTech Connect

    Micheels, R.H.; Valdivia, P.; Hanoka, J.I.

    1992-01-21

    This patent describes a method of fabricating a solar cell. It comprises providing a substrate in the form of a silicon ribbon having front and back surfaces and a polygonal edge configuration formed by a series of side edge surfaces; using a source of phosphorus to form a PN junction in the substrate so that the junction extends adjacent to the front and back surfaces and the side edge surfaces; and using an excimer laser to form a trench in one of the front and back surfaces so that the trench extends adjacent to and has a configuration similar to the peripheral configuration, the trench extends through and interrupts the junction along the entire length of the trench in the one surface, whereby an ohmic contact formed on the front surface will be electrically isolated from an ohmic contact formed on the rear surface, and the use of the excimer laser to form the trench does not cause phosphorus to diffuse deeper into the substrate.

  7. Dye-sensitized solar cells

    DOEpatents

    Skotheim, T.A.

    1980-03-04

    A low-cost dye-sensitized Schottky barrier solar cell is comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent. 3 figs.

  8. Dye-sensitized solar cells

    DOEpatents

    Skotheim, Terje A. [Berkeley, CA

    1980-03-04

    A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent.

  9. Highly stable tandem solar cell monolithically integrating dye-sensitized and CIGS solar cells

    PubMed Central

    Chae, Sang Youn; Park, Se Jin; Joo, Oh-Shim; Jun, Yongseok; Min, Byoung Koun; Hwang, Yun Jeong

    2016-01-01

    A highly stable monolithic tandem solar cell was developed by combining the heterogeneous photovoltaic technologies of dye-sensitized solar cell (DSSC) and solution-processed CuInxGa1-xSeyS1-y (CIGS) thin film solar cells. The durability of the tandem cell was dramatically enhanced by replacing the redox couple from to [Co(bpy)3]2+ /[Co(bpy)3]3+), accompanied by a well-matched counter electrode (PEDOT:PSS) and sensitizer (Y123). A 1000 h durability test of the DSSC/CIGS tandem solar cell in ambient conditions resulted in only a 5% decrease in solar cell efficiency. Based on electrochemical impedance spectroscopy and photoelectrochemical cell measurement, the enhanced stability of the tandem cell is attributed to minimal corrosion by the cobalt-based polypyridine complex redox couple. PMID:27489138

  10. Highly stable tandem solar cell monolithically integrating dye-sensitized and CIGS solar cells

    NASA Astrophysics Data System (ADS)

    Chae, Sang Youn; Park, Se Jin; Joo, Oh-Shim; Jun, Yongseok; Min, Byoung Koun; Hwang, Yun Jeong

    2016-08-01

    A highly stable monolithic tandem solar cell was developed by combining the heterogeneous photovoltaic technologies of dye-sensitized solar cell (DSSC) and solution-processed CuInxGa1-xSeyS1-y (CIGS) thin film solar cells. The durability of the tandem cell was dramatically enhanced by replacing the redox couple from to [Co(bpy)3]2+ /[Co(bpy)3]3+), accompanied by a well-matched counter electrode (PEDOT:PSS) and sensitizer (Y123). A 1000 h durability test of the DSSC/CIGS tandem solar cell in ambient conditions resulted in only a 5% decrease in solar cell efficiency. Based on electrochemical impedance spectroscopy and photoelectrochemical cell measurement, the enhanced stability of the tandem cell is attributed to minimal corrosion by the cobalt-based polypyridine complex redox couple.