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Sample records for gallium alloys

  1. Method for Plutonium-Gallium Separation by Anodic Dissolution of a Solid Plutonium-Gallium Alloy

    SciTech Connect

    Miller, William E.; Tomczuk, Zygmunt

    1998-12-08

    Purified plutonium and gallium are efficiently recovered from a solid plutonium-gallium (Pu-Ga) alloy by using an electrorefining process. The solid Pu-Ga alloy is the cell anode, preferably placed in a moving basket within the electrolyte. As the surface of the Pu-Ga anode is depleted in plutonium by the electrotransport of the plutonium to a cathode, the temperature of the electrolyte is sufficient to liquify the surface, preferably at about 500 C, resulting in a liquid anode layer substantially comprised of gallium. The gallium drips from the liquified surface and is collected below the anode within the electrochemical cell. The transported plutonium is collected on the cathode surface and is recovered.

  2. Thermodynamic properties of uranium in gallium-aluminium based alloys

    NASA Astrophysics Data System (ADS)

    Volkovich, V. A.; Maltsev, D. S.; Yamshchikov, L. F.; Chukin, A. V.; Smolenski, V. V.; Novoselova, A. V.; Osipenko, A. G.

    2015-10-01

    Activity, activity coefficients and solubility of uranium was determined in gallium-aluminium alloys containing 1.6 (eutectic), 5 and 20 wt.% aluminium. Additionally, activity of uranium was determined in aluminium and Ga-Al alloys containing 0.014-20 wt.% Al. Experiments were performed up to 1073 K. Intermetallic compounds formed in the alloys were characterized by X-ray diffraction. Partial and excess thermodynamic functions of U in the studied alloys were calculated.

  3. [Dimensional changes of silver and gallium-based alloy].

    PubMed

    Ballester, R Y; Markarian, R A; Loguercio, A D

    2001-01-01

    Gallium-based dental alloys were created with the aim of solving the problem of toxicity of mercury. The material shows mechanical properties similar to those of dental amalgam, but researches point out two unfavorable characteristics: great corrosion and excessive post-setting expansion, and the latter is capable of cracking dental structures. The aim of this study was to evaluate, during 7 days, the in vitro dimensional alteration of a gallium dental alloy (Galloy, SDI, Australia), in comparison with a dental amalgam containing zinc (F400, SDI, Australia), as a function of the contact with saline solution (0.9% NaCl) during the setting period. The storage experimental conditions were: storage in dry environment, immersion in saline solution and contamination during condensation. Additionally, the effects of contamination during the trituration of dental amalgam and the effects of protecting the surface of the gallium alloy with a fluid resin were studied. Specimens were stored at 37 degrees C +/- 1 degree C, and measuring was carried out, sequentially, every 24 h during 7 days. When the gallium alloy was either contaminated or immersed, an expansion significantly greater than that observed in the other experimental conditions was noticed after 7 days. The application of a fluid resin to protect the surface of the cylinders was able to avoid the increase in expansion caused by superficial moisture. The amalgam alloy did not show significant dimensional alterations, except when it was contaminated during trituration. PMID:11787323

  4. Microfluidic platforms for gallium-based liquid metal alloy

    NASA Astrophysics Data System (ADS)

    Kim, Daeyoung

    As an alternative to toxic mercury, non-toxic gallium-based liquid metal alloy has been gaining popularity due to its higher thermal and electrical conductivities, and low toxicity along with liquid property. However, it is difficult to handle as the alloy becomes readily oxidized in atmospheric air environment. This instant oxidation causes the gallium-based liquid metal alloy to wet almost any solid surface. Therefore, it has been primarily limited to applications which rely only on its deformability, not on its mobility. In this research, various approaches to mobilize gallium-based liquid metal alloy were investigated. Multi-scale surface patterned with polydimethylsiloxane (PDMS) micro pillar array showed super-lyophobic property against gallium-based liquid metal alloy by minimizing the contact area between the solid surface and the liquid metal, and it was expanded to a three-dimensional tunnel shaped microfluidic channel. Vertically-aligned carbon nanotube forest leads to another promising super-lyophobic surface due to its hierarchical micro/nano scale combined structures and chemical inertness. When the carbon nanotubes were transferred onto flexible PDMS by imprinting, the super-lyophobic property was still maintained even under the mechanical deformation such as stretching and bending. Alternatively, the gallium-based liquid metal can be manipulated by modifying the surface of liquid metal itself. With chemical reaction with HCl 'vapor', the oxidized surface (mainly Ga2O3/Ga2O) of gallium-based liquid metal was converted to GaCl3/InCl 3 resulting in the recovery of non-wetting characteristics. Paper which is intrinsically porous is attractive as a super-lyophobic surface and it was found that hydrochloric acid (HCl) impregnation enhanced the anti-wetting property by the chemical reaction. As another alternative method, by coating the viscoelastic oxidized surface of liquid metal with ferromagnetic materials (CoNiMnP or Fe), it showed non-wetting property and became moveable by applying a magnetic field. Finally, using its metallic and liquid properties, microfluidic-based applications of gallium-based liquid metal alloy such as inkjet printing and reconfigurable photomask were investigated. A clog-free and oxide-free inkjet printing technique was developed by incorporating HCl-impregnated paper as orifice. Inkjet-printed liquid metal line can be used as a metallic interconnect even with significant deformation of the flexible substrate. Additionally, based on its ultraviolet light blocking property, a reconfigurable photolithography using gallium-based liquid metal alloy was demonstrated in a PDMS-based 7-segments microfluidic channel by showing single digit numbers ('0''9') with attainable minimum feature size of 10 microm.

  5. Gallium

    SciTech Connect

    1996-01-01

    Discovered in 1875 through a study of its spectral properties, gallium was the first element to be uncovered following the publication of Mendeleev`s Periodic Table. French chemist, P.E. Lecoq de Boisbaudran, named his element discovery in honor of his native country; gallium is derived from the Latin word for France-{open_quotes}Gallia.{close_quotes}. This paper describes the properties, sources, and market for gallium.

  6. Miniature spherical motor using iron-gallium alloy (Galfenol)

    NASA Astrophysics Data System (ADS)

    Ueno, Toshiyuki; Saito, Chihiro; Imaizumi, Nobuo; Higuchi, Toshiro

    2008-03-01

    We propose a miniature spherical motor using iron-gallium alloy (Galfenol). This motor consists of four rods of Galfenol with square cross-section, a wound coil, a permanent magnet, an iron yoke and a spherical rotor placed on the edge of the rods. The magnetomotive force of the magnet provides bias magnetostriction for the rods and an attractive force that maintains the rotor on the rods. When currents of 180 deg phase difference flow in pairs of opposing coils, a torque is exerted on the rotor is by pushing (expansion) and pulling (contraction) of the rods. Rotation about a single axis is realized by a sawtooth current, such that the rotor rotates with slow expansion and slips at the rapid contraction. The motor can be fabricated at small sizes and driven with a low voltage, suitable for application as a microactuator for rotating the camera and mirror in endoscopes.

  7. A study of the apical microleakage of a gallium alloy as a retrograde filling material.

    PubMed

    Hosoya, N; Lautenschlager, E P; Greener, E H

    1995-09-01

    The feasibility of utilizing mercury-free Gallium alloy GF for retrograde filling was investigated by comparing apical microleakage in 184 extracted human teeth. The teeth were divided into four experimental and two control groups. Three experimental groups were apical cavity retrofillings with the Gallium alloy GF, a mercury-containing amalgam, and a glass ionomer. The fourth experimental group was filled with gutta-percha and heat-burnished after apicoectomy. After 24 h, 1 wk, 4 wk, and 12 wk immersion in dye solution, the roots were vertically sectioned, and the deepest point of dye penetration was recorded. The glass ionomer showed the least leakage, followed by the amalgam group and the gallium group (no significant difference). The gutta-percha heat-burnished group displayed the greatest leakage. Gallium alloy GF was shown to have an equivalent sealing potential to dental amalgam for a retrograde filling material. PMID:8537788

  8. Thermodynamic properties of uranium in liquid gallium, indium and their alloys

    NASA Astrophysics Data System (ADS)

    Volkovich, V. A.; Maltsev, D. S.; Yamshchikov, L. F.; Osipenko, A. G.

    2015-09-01

    Activity, activity coefficients and solubility of uranium was determined in gallium, indium and gallium-indium alloys containing 21.8 (eutectic), 40 and 70 wt.% In. Activity was measured at 573-1073 K employing the electromotive force method, and solubility between room temperature (or the alloy melting point) and 1073 K employing direct physical measurements. Activity coefficients were obtained from the difference of experimentally determined temperature dependencies of uranium activity and solubility. Intermetallic compounds formed in the respective alloys were characterized using X-ray diffraction. Partial and excess thermodynamic functions of uranium in the studied alloys were calculated. Liquidus lines in U-Ga and U-In phase diagrams from the side rich in gallium or indium are proposed.

  9. Liquid-phase gallium-indium alloy electronics with microcontact printing.

    PubMed

    Tabatabai, Arya; Fassler, Andrew; Usiak, Claire; Majidi, Carmel

    2013-05-21

    Liquid-phase electronic circuits are patterned on an elastomer substrate with a microcontact printer. The printer head dips into a pool of a liquid-phase gallium-indium alloy, e.g., eutectic gallium-indium (EGaIn) or gallium-indium-tin (Galinstan), and deposits a single drop on a silicone elastomer substrate. After patterned deposition, the liquid-phase circuit is sealed with an additional layer of silicone elastomer. We also demonstrate patterned deposition of the liquid-phase GaIn alloy with a molded polydimethylsiloxane stamp that is manually inked and pressed into an elastomer substrate. As with other liquid-phase electronics produced through needle injection or masked deposition, the circuit is elastically deformable and can be stretched to several times its natural length without losing electronic functionality. In contrast to existing fabrication techniques, microcontact printing and stamp lithography can be used to produce circuits with any planar geometric feature, including electrodes with large planar area, intersecting and closed-loop wires, and combs with multiple terminal electrodes. In air, the surface of the coalesced droplets oxidize to form a thin oxide skin that preserves the shape of the circuit during sealing. This first demonstration of soft-lithography fabrication with liquid-phase GaIn alloy expands the space of allowable circuit geometries and eliminates the need for mold or mask fabrication. PMID:23659455

  10. Gallium suboxide vapor attack on chromium, cobalt, molybdenum, tungsten and their alloys at 1200 [degrees] C

    SciTech Connect

    Kolman, D. G.; Taylor, T. N.; Park, Y.; Stan, M.; Butt, D. P.; Maggiore, C. J.; Tesmer, Joseph R.; Havrilla, G. J.

    2004-01-01

    Our prior work elucidated the failure mechanism of furnace materi als (304 SS, 316 SS, and Hastelloy C-276) exposed to gallium suboxide (Ga{sub 2}O) and/or gallium oxide (Ga{sub 2}O{sub 3}) during plutonium - gallium compound processing. Failure was hypothesized to result from concurrent alloy oxidation/Ga compound reduction followed by Ga uptake. The aim of the current work is to screen candidate replacement materials. Alloys Haynes 25 (49 Co - 20 Cr - 15 W - 10 Ni - 3 Fe - 2 Mn - 0.4 Si, wt%), 52 Mo - 48 Re (wt%), 62 W - 38 Cu (wt%), and commercially pure Cr, Co, Mo, W, and alumina were examined. Preliminary assessments of commercially pure W and Mo - Re suggest that these materials may be suitable for furnace construction. Thermodynamics calculations indicating that materials containing Al, Cr, Mn, Si, and V would be susceptible to oxidation in the presence of Ga{sub 2}O were validated by experimental results. In contrast to that reported previously, an alternate reaction mechanism for Ga uptake, which does not require concurrent alloy oxidation, controls Ga uptake for certain materials. A correlation between Ga solubility and uptake was noted.

  11. Inhibition of carious lesions in vitro around gallium alloy restorations by fluoride releasing resin-ionomer cement.

    PubMed

    Nagamine, M; Alim, N N; Itota, T; Torii, Y; Staninec, M; Inoue, K

    1999-03-01

    A new fluoride releasing resin-ionomer cement was used for bonding of gallium alloy restorations in vitro. Etching, priming, and fluoride releasing resin-ionomer cement were used in the experimental group (ARG), prior to placement of the gallium alloy restorations. Three different controls were used: gallium alloy only (G), no etching, fluoride releasing resin-ionomer cement, gallium alloy (RG), etching, priming, non-fluoride cement and gallium alloy (ACG). The mean shear bond strengths of ARG group to enamel and dentin were higher than those of the three control groups. Artificial secondary caries lesions around the restorations in the experimental group and the control groups were produced, using a strep. mutans culture. The microradiographs were examined for presence of a caries inhibition zone near the restoration. Caries inhibition zones were clearly detected around RG and ARG, but not around G and ACG. The results indicate that the fluoride releasing resin-ionomer cement provided good adhesion and caries inhibition in enamel and dentin. PMID:10786147

  12. Effects of lining materials on shear bond strength of amalgam and gallium alloy restorations.

    PubMed

    Ng, B P; Purton, D G; Hood, J A

    1998-01-01

    In this in vitro study, where alloys were condensed into unset paste lining materials, shear bond strengths were significantly greater than with the unlined controls. The use of varnish or Paama 2 linings did not significantly increase the shear bond strength of amalgam or gallium alloy restorations. The use of Vitrabond, Vitremer, or Resinomer liners significantly increased the shear bond strength compared to unlined restorations. Permite C restorations lined with Resinomer all showed cohesive failure within the mixed alloy/ liner. Of the unlined restorations, Permite C had significantly higher shear bond strength than Lojic Plus. The experimental method used in the present study proved to be suitable for quantitative comparison of the shear bond strength of different dental materials. PMID:9656921

  13. Frequency-Switchable Metamaterial Absorber Injecting Eutectic Gallium-Indium (EGaIn) Liquid Metal Alloy

    PubMed Central

    Ling, Kenyu; Kim, Hyung Ki; Yoo, Minyeong; Lim, Sungjoon

    2015-01-01

    In this study, we demonstrated a new class of frequency-switchable metamaterial absorber in the X-band. Eutectic gallium-indium (EGaIn), a liquid metal alloy, was injected in a microfluidic channel engraved on polymethyl methacrylate (PMMA) to achieve frequency switching. Numerical simulation and experimental results are presented for two cases: when the microfluidic channels are empty, and when they are filled with liquid metal. To evaluate the performance of the fabricated absorber prototype, it is tested with a rectangular waveguide. The resonant frequency was successfully switched from 10.96 GHz to 10.61 GHz after injecting liquid metal while maintaining absorptivity higher than 98%. PMID:26561815

  14. Frequency-Switchable Metamaterial Absorber Injecting Eutectic Gallium-Indium (EGaIn) Liquid Metal Alloy.

    PubMed

    Ling, Kenyu; Kim, Hyung Ki; Yoo, Minyeong; Lim, Sungjoon

    2015-01-01

    In this study, we demonstrated a new class of frequency-switchable metamaterial absorber in the X-band. Eutectic gallium-indium (EGaIn), a liquid metal alloy, was injected in a microfluidic channel engraved on polymethyl methacrylate (PMMA) to achieve frequency switching. Numerical simulation and experimental results are presented for two cases: when the microfluidic channels are empty, and when they are filled with liquid metal. To evaluate the performance of the fabricated absorber prototype, it is tested with a rectangular waveguide. The resonant frequency was successfully switched from 10.96 GHz to 10.61 GHz after injecting liquid metal while maintaining absorptivity higher than 98%. PMID:26561815

  15. Czochralski growth of gallium indium antimonide alloy crystals

    SciTech Connect

    Tsaur, S.C.

    1998-02-01

    Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochralski process. A transparent furnace was used, with hydrogen purging through the chamber during crystal growth. Single crystal seeds up to about 2 to 5 mole% InSb were grown from seeds of 1 to 2 mole% InSb, which were grown from essentially pure GaSb seeds of the [111] direction. Single crystals were grown with InSb rising from about 2 to 6 mole% at the seed ends to about 14 to 23 mole% InSb at the finish ends. A floating-crucible technique that had been effective in reducing segregation in doped crystals, was used to reduce segregation in Czochralski growth of alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb. Crystals close to the targeted composition of 1 mole% InSb were grown. However, difficulties were encountered in reaching higher targeted InSb concentrations. Crystals about 2 mole% were grown when 4 mole% was targeted. It was observed that mixing occurred between the melts rendering the compositions of the melts; and, hence, the resultant crystal unpredictable. The higher density of the growth melt than that of the replenishing melt could have triggered thermosolutal convection to cause such mixing. It was also observed that the floating crucible stuck to the outer crucible when the liquidus temperature of the replenishing melt was significantly higher than that of the growth melt. The homogeneous Ga{sub 1{minus}x}In{sub x}Sb single crystals were grown successfully by a pressure-differential technique. By separating a quartz tube into an upper chamber for crystal growth and a lower chamber for replenishing. The melts were connected by a capillary tube to suppress mixing between them. A constant pressure differential was maintained between the chambers to keep the growth melt up in the growth chamber. The method was first tested with a low temperature alloy Bi{sub 1{minus}x}Sb{sub x}. Single crystals of Ga{sub 1{minus}x}In{sub x}Sb were grown with uniform compositions up to nearly 5 mole% InSb.

  16. Measured iron-gallium alloy tensile properties under magnetic fields

    NASA Astrophysics Data System (ADS)

    Yoo, Jin-Hyeong; Flatau, Alison B.

    2004-07-01

    Tension testing is used to identify Galfenol material properties under low level DC magnetic bias fields. Dog bone shaped specimens of single crystal Fe100-xGax, where 17<=x<=33, underwent tensile testing along two crystalographic axis orientations, [110] and [100]. The material properties being investigated and calculated from measured quantities are: Young's modulus and Poisson's ratio. Data are presented that demonstrate the dependence of these material properties on applied magnetic field levels and provide a preliminary assessment of the trends in material properties for performance under varied operating conditions. The elastic properties of Fe-Ga alloys were observed to be increasingly anisotropic with rising Ga content for the stoichiometries examined. The largest elastic anisotropies were manifested in [110] Poisson's ratios of as low as -0.63 in one specimen. This negative Poisson's ratio creates a significant in-plane auxetic behavior that could be exploited in applications that capitalize on unique area effects produced under uniaxial loading.

  17. Alloying and Structure of Ultrathin Gallium Films on the (111) and (110) Surfaces of Palladium

    PubMed Central

    2013-01-01

    Growth, thermal stability, and structure of ultrathin gallium films on Pd(111) and Pd(110) are investigated by low-energy ion scattering and low-energy electron diffraction. Common to both surface orientations are growth of disordered Ga films at coverages of a few monolayers (T = 150 K), onset of alloy formation at low temperatures (T ≈ 200 K), and formation of a metastable, mostly disordered 1:1 surface alloy at temperatures around 400–500 K. At higher temperatures a Ga surface fraction of ∼0.3 is slightly stabilized on Pd(111), which we suggest to be related to the formation of Pd2Ga bulk-like films. While on Pd(110) only a Pd-up/Ga-down buckled surface was observed, an inversion of buckling was observed on Pd(111) upon heating. Similarities and differences to the related Zn/Pd system are discussed. PMID:24089625

  18. The microstructural, mechanical, and fracture properties of austenitic stainless steel alloyed with gallium

    NASA Astrophysics Data System (ADS)

    Kolman, D. G.; Bingert, J. F.; Field, R. D.

    2004-11-01

    The mechanical and fracture properties of austenitic stainless steels (SSs) alloyed with gallium require assessment in order to determine the likelihood of premature storage-container failure following Ga uptake. AISI 304 L SS was cast with 1, 3, 6, 9, and 12 wt pct Ga. Increased Ga concentration promoted duplex microstructure formation with the ferritic phase having a nearly identical composition to the austenitic phase. Room-temperature tests indicated that small additions of Ga (less than 3 wt pct) were beneficial to the mechanical behavior of 304 L SS but that 12 wt pct Ga resulted in a 95 pct loss in ductility. Small additions of Ga are beneficial to the cracking resistance of stainless steel. Elastic-plastic fracture mechanics analysis indicated that 3 wt pct Ga alloys showed the greatest resistance to crack initiation and propagation as measured by fatigue crack growth rate, fracture toughness, and tearing modulus. The 12 wt pct Ga alloys were least resistant to crack initiation and propagation and these alloys primarily failed by transgranular cleavage. It is hypothesized that Ga metal embrittlement is partially responsible for increased embrittlement.

  19. Characterization and modeling of the magnetomechanical behavior of iron-gallium alloys

    NASA Astrophysics Data System (ADS)

    Atulasimha, Jayasimha

    Magnetostrictive Iron-Gallium alloys (Galfenol) demonstrate moderate magnetostriction (350 ppm) under very low magnetic fields (100 Oe), have very low hysteresis, high tensile strength (500 MPa), high Curie temperature (675C), are in general machinable, ductile and corrosion resistant. Therefore, they hold great promise in active vibration control, actuation, stress and torque sensing in helicopters, aircrafts and automobiles. To facilitate design of magnetostrictive actuators and sensors using this material, as well as to aid in making it commercially viable, it is necessary to perform a comprehensive characterization and modeling of its magnetomechanical behavior. This dissertation addresses some of these issues, focusing primarily on quasi-static characterization and modeling of the magnetomechanical behavior of single-crystal FeGa alloys with varying gallium content and along different crystallographic directions, and studying the effect of texture on the magnetomechanical behavior of polycrystals. Additionally, improved testing and modeling paradigms for magnetostrictive materials are developed to contribute to a better understanding and prediction of actuation and sensing behavior of FeGa alloys. In particular, the actuation behavior (lambda-H and B-H curves) for 19, 24.7 and 29 at. % Ga <100> oriented single crystal FeGa samples are characterized and the strikingly different characteristics are simulated and explained using an energy based model. Actuation and sensing (B-sigma and ?-sigma curves) behavior of <100> oriented 19 at. % Ga and <110> oriented 18 at. % Ga single crystal samples are characterized. It is demonstrated that the sensing behavior can be predicted by the model, using parameters obtained from the actuation behavior. The actuation and sensing behavior of 18.4 at. % Ga polycrystalline FeGa sample is predicted from the volume fraction of grains close to the [100], [110], [210], [310], [111], [211] and [311] orientations (obtained from cross-section texture analysis). The predictions are benchmarked against experimental actuator and sensor characteristics of the polycrystalline sample.

  20. Magnetostriction and corrosion studies in single crystals of iron-gallium alloys

    NASA Astrophysics Data System (ADS)

    Jayaraman, Tanjore V.

    Iron-gallium alloys have an excellent combination of large low-field magnetostriction, good mechanical properties, low hysteresis, and relatively low cost. This dissertation focuses on the magneto striction and corrosion behaviors of single crystals of Fe-Ga alloys. In the first part, the variation of magnetostrictive coefficient: (3/2) lambda100, with composition and heat treatment conditions of Fe-Ga alloys, is examined. Single crystals with compositions Fe-15 at.% Ga, Fe-20 at.% Ga, and Fe-27.5 at.% Ga were obtained by (a) vertical Bridgman technique (DG) and (b) vertical Bridgman technique followed by long-term annealing (LTA) and quenching. Rapid quenching from a phase region improves the (3/2) lambda 100 value in these alloys. X-ray diffraction characterization showed for the first time the direct evidence of short-range ordering in these alloys. The second part reports the first study of alpha" ordering heat treatment on the elastic properties and magnetostriction of Fe-27.5 at.% Ga alloy single crystals. The elastic constants were measured using resonant ultrasound spectroscopy (RUS), and the elastic properties and magneto-elastic coupling constant were calculated. The (3/2) lambda100 and B1 values obtained for a phase were higher than alpha" phase. The third part examines the first study of corrosion behavior of as-cast FeGa and Fe-Ga-Al alloys in acidic, basic, and simulated seawater environments. Corrosion measurements were performed by Tafel scan and polarization resistance method and in general exhibited good corrosion resistance. The fourth part examines the first study of corrosion behavior of Fe-15 at.% Ga, Fe-20 at.% Ga, and Fe-27.5 at.% Ga DG and LTA alloy single crystals and the dependence of corrosion rates on the crystal orientations. The corrosion resistance was better in basic environments followed by simulated seawater and acidic environments. The fifth part examines the effect of magnetostriction on the corrosion behavior of [100]-oriented single crystal of Fe-20 at.% Ga alloy in acidic and simulated seawater solution, first study ever of this kind. Magnetostrictive strain introduced on the application of saturation magnetic field increased the corrosion rate of [100]-oriented Fe-20 at.% Ga alloy single crystal by 40% in 0.1M HCl and decreased the corrosion rate by 15% in 3.5 wt.% NaCl solution.

  1. Effects of sealers and liners on marginal leakage of amalgam and gallium alloy restorations.

    PubMed

    Ng, B P; Hood, J A; Purton, D G

    1998-01-01

    In an in vitro study, the use of sealers and liners (Fuji varnish, Vitrabond, Vitremer, Paama 2, All-Bond 2, or Resinomer) significantly reduced the amount of marginal leakage around amalgam (Permite C or Lojic Plus) and gallium (Galloy) alloy restorations. This reduction in marginal leakage was produced by all sealers and liners tested, and there were no statistically significant differences between these materials. Unlined restorations of Permite C had significantly less marginal leakage than Galloy or Lojic Plus. Unlined Lojic Plus restorations had the greatest amount of marginal leakage. The experimental method used in the present study proved to be suitable for quantitative comparison of marginal leakage of different dental materials. PMID:9863443

  2. Measurement of magnetic field dependent Young's modulus of iron-gallium alloy in flexural mode

    NASA Astrophysics Data System (ADS)

    Datta, Supratik; Flatau, Alison B.

    2006-03-01

    Iron-Gallium alloys have demonstrated high compressive stress sensitivity (~ 30 T/GPa) along with considerable tensile strength (~ 515 MPa) and Young's modulus (~ 65 GPa) thus making them attractive materials for magnetostrictive sensors. In this work, four-point bending test was performed on single crystal Fe 84Ga 16 (Galfenol) under magnetic field to characterize its magneto-mechanical response in bending mode. The longitudinal and transverse strains (? [100] and ? [010]) obtained under different mechanical loads (P) and DC magnetic bias fields (H) were used to estimate material properties like average Young's modulus (E [100]) and Poisson's ratio (? [010]). The stress-dependent change in magnetic induction (B) at constant bias fields was obtained for different bending loads. The results of this study helps in understanding the behavior of and challenges related to Galfenol based magnetostrictive sensors which work in bending (flexural) mode.

  3. Direct Band Gap Gallium Antimony Phosphide (GaSbxP1‑x) Alloys

    NASA Astrophysics Data System (ADS)

    Russell, H. B.; Andriotis, A. N.; Menon, M.; Jasinski, J. B.; Martinez-Garcia, A.; Sunkara, M. K.

    2016-02-01

    Here, we report direct band gap transition for Gallium Phosphide (GaP) when alloyed with just 1–2 at% antimony (Sb) utilizing both density functional theory based computations and experiments. First principles density functional theory calculations of GaSbxP1‑x alloys in a 216 atom supercell configuration indicate that an indirect to direct band gap transition occurs at x = 0.0092 or higher Sb incorporation into GaSbxP1‑x. Furthermore, these calculations indicate band edge straddling of the hydrogen evolution and oxygen evolution reactions for compositions ranging from x = 0.0092 Sb up to at least x = 0.065 Sb making it a candidate for use in a Schottky type photoelectrochemical water splitting device. GaSbxP1‑x nanowires were synthesized by reactive transport utilizing a microwave plasma discharge with average compositions ranging from x = 0.06 to x = 0.12 Sb and direct band gaps between 2.21 eV and 1.33 eV. Photoelectrochemical experiments show that the material is photoactive with p-type conductivity. This study brings attention to a relatively uninvestigated, tunable band gap semiconductor system with tremendous potential in many fields.

  4. Direct Band Gap Gallium Antimony Phosphide (GaSbxP1-x) Alloys.

    PubMed

    Russell, H B; Andriotis, A N; Menon, M; Jasinski, J B; Martinez-Garcia, A; Sunkara, M K

    2016-01-01

    Here, we report direct band gap transition for Gallium Phosphide (GaP) when alloyed with just 1-2 at% antimony (Sb) utilizing both density functional theory based computations and experiments. First principles density functional theory calculations of GaSbxP1-x alloys in a 216 atom supercell configuration indicate that an indirect to direct band gap transition occurs at x = 0.0092 or higher Sb incorporation into GaSbxP1-x. Furthermore, these calculations indicate band edge straddling of the hydrogen evolution and oxygen evolution reactions for compositions ranging from x = 0.0092 Sb up to at least x = 0.065 Sb making it a candidate for use in a Schottky type photoelectrochemical water splitting device. GaSbxP1-x nanowires were synthesized by reactive transport utilizing a microwave plasma discharge with average compositions ranging from x = 0.06 to x = 0.12 Sb and direct band gaps between 2.21 eV and 1.33 eV. Photoelectrochemical experiments show that the material is photoactive with p-type conductivity. This study brings attention to a relatively uninvestigated, tunable band gap semiconductor system with tremendous potential in many fields. PMID:26860470

  5. Direct Band Gap Gallium Antimony Phosphide (GaSbxP1−x) Alloys

    PubMed Central

    Russell, H. B.; Andriotis, A. N.; Menon, M.; Jasinski, J. B.; Martinez-Garcia, A.; Sunkara, M. K.

    2016-01-01

    Here, we report direct band gap transition for Gallium Phosphide (GaP) when alloyed with just 1–2 at% antimony (Sb) utilizing both density functional theory based computations and experiments. First principles density functional theory calculations of GaSbxP1−x alloys in a 216 atom supercell configuration indicate that an indirect to direct band gap transition occurs at x = 0.0092 or higher Sb incorporation into GaSbxP1−x. Furthermore, these calculations indicate band edge straddling of the hydrogen evolution and oxygen evolution reactions for compositions ranging from x = 0.0092 Sb up to at least x = 0.065 Sb making it a candidate for use in a Schottky type photoelectrochemical water splitting device. GaSbxP1−x nanowires were synthesized by reactive transport utilizing a microwave plasma discharge with average compositions ranging from x = 0.06 to x = 0.12 Sb and direct band gaps between 2.21 eV and 1.33 eV. Photoelectrochemical experiments show that the material is photoactive with p-type conductivity. This study brings attention to a relatively uninvestigated, tunable band gap semiconductor system with tremendous potential in many fields. PMID:26860470

  6. Ab initio study of gallium stabilized ?-plutonium alloys and hydrogen-vacancy complexes.

    PubMed

    Hernandez, Sarah C; Schwartz, Daniel S; Taylor, Christopher D; Ray, Asok K

    2014-06-11

    All-electron density functional theory was used to investigate ?-plutonium (?-Pu) alloyed with gallium (Ga) impurities at 3.125, 6.25, 9.375 atomic (at)% Ga concentrations. The results indicated that the lowest energy structure is anti-ferromagnetic, independent of the Ga concentration. At higher Ga concentrations (>3.125?at%), the position of the Ga atoms are separated by four nearest neighbor Pu-Pu shells. The results also showed that the lattice constant contracts with increasing Ga concentration, which is in agreement with experimental data. Furthermore with increasing Ga concentration, the face-centered-cubic structure becomes more stably coupled with increasing short-range disorder. The formation energies show that the alloying process is exothermic, with an energy range of -0.028 to -0.099?eV/atom. The analyses of the partial density of states indicated that the Pu-Ga interactions are dominated by Pu 6d and Ga 4p hybridizations, as well as Ga 4s-4p hybridizations. Finally, the computed formation energies for vacancy and hydrogen-vacancy complexes within the 3.125?at% Ga cell were 1.12?eV (endothermic) and -3.88?eV (exothermic), respectively. In addition, the hydrogen atom prefers to interact much more strongly to the Pu atom than the Ga atom in the hydrogen-vacancy complex. PMID:24832613

  7. Shear strain mediated magneto-electric effects in composites of piezoelectric lanthanum gallium silicate or tantalate and ferromagnetic alloys

    NASA Astrophysics Data System (ADS)

    Sreenivasulu, G.; Qu, P.; Piskulich, E.; Petrov, V. M.; Fetisov, Y. K.; Nosov, A. P.; Qu, Hongwei; Srinivasan, G.

    2014-07-01

    Shear strain mediated magneto-electric (ME) coupling is studied in composites of piezoelectric Y-cut lanthanum gallium silicate (LGS) or tantalate (LGT) and ferromagnetic Fe-Co-V alloys. It is shown that extensional strain does not result in ME effects in these layered composites. Under shear strain generated by an ac and dc bias magnetic fields along the length and width of the sample, respectively, strong ME coupling is measured at low-frequencies and at mechanical resonance. A model is discussed for the ME effects. These composites of Y-cut piezoelectrics and ferromagnetic alloys are of importance for shear strain based magnetic field sensors.

  8. Shear strain mediated magneto-electric effects in composites of piezoelectric lanthanum gallium silicate or tantalate and ferromagnetic alloys

    SciTech Connect

    Sreenivasulu, G.; Piskulich, E.; Srinivasan, G.; Qu, P.; Qu, Hongwei; Petrov, V. M.; Fetisov, Y. K.; Nosov, A. P.

    2014-07-21

    Shear strain mediated magneto-electric (ME) coupling is studied in composites of piezoelectric Y-cut lanthanum gallium silicate (LGS) or tantalate (LGT) and ferromagnetic Fe-Co-V alloys. It is shown that extensional strain does not result in ME effects in these layered composites. Under shear strain generated by an ac and dc bias magnetic fields along the length and width of the sample, respectively, strong ME coupling is measured at low-frequencies and at mechanical resonance. A model is discussed for the ME effects. These composites of Y-cut piezoelectrics and ferromagnetic alloys are of importance for shear strain based magnetic field sensors.

  9. Controlled Electrochemical Synthesis Of Giant Magnetostrictive Iron-Gallium Alloy Thin Films And Nanowires

    NASA Astrophysics Data System (ADS)

    Reddy, Kotha Sai Madhukar

    Magnetostrictive Galfenol (Fe1-xGax, x = 10%--40%) alloys have generated tremendous interest in recent times because of their potential as functional materials in various micro- and nano-electromechanical systems (MEMS/NEMS)-based transducers and sensors. Among the giant magnetostrictive alloys, Terfenol-D (Tb1-xDyxFe2) has the largest magnetostriction, but its brittle nature limits its applications. In contrast, the next best magnetostrictive alloy, Galfenol, is highly malleable and ductile while having the tensile strength of Iron. Electrochemistry is an economical route to fabricate 'very thick' films (upto several microns) or high-aspect ratio structures like nanowire arrays. However, the highly electropositive nature of gallium makes it very difficult to electrodeposit from aqueous solutions, similar in behavior to other non-ideal elements like molybdenum, phosphorus, tungsten etc. As a result, Fe1-xGa x alloy plating has been severely plagued by non-repeatability in compositions from growth to growth, lack of uniformity in filling of pores when growing nanowires in nanoporous templates, undesired secondary hydrogen evolution reactions etc. In this study, a thorough understanding of the complex interplay between various deposition parameters (pH, overpotential, concentration, hydrodynamic conditions) was achieved, leading to an understanding of the deposition mechanism itself, thus allowing excellent control and ability to tune the alloy compositions. Arrays of nanowires were fabricated with alternating segments of the magnetostrictive alloy Fe1-xGax and Cu in nanoporous anodic aluminum oxide (AAO) templates. A novel rotating disk electrode-template (designed in-house) was used to optimize the nanowire length distributions by controlling the various aspects of electrodeposition like nucleation, kinetics and mass-transfer. Extensive structural characterization was done by X-ray diffraction (XRD), electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM), and magnetic characterization by vibrating sample magnetometry (VSM). Furthermore, of excellent promise in semiconductor spintronics, the feasibility of fabricating epitaxially nucleated Fe1-xGax thin films on GaAs having the desired (001) texture was demonstrated. Structural characterization using microdiffraction, high resolution ? - 2theta and rocking curve analysis revealed that the films grown on GaAs(001) are highly textured with <001> orientation along the substrate normal, and the texture improved further upon annealing at 300 C for 2 hours in N2 environment. This was in contrast to films grown on polycrystalline brass substrates which exhibited undesired <011> texture out-of-plane. Rocking curve analysis on Fe1-xGax/GaAs structures further confirmed that the <001> texture in the Fe1-xGax thin film was indeed due to epitaxial nucleation and growth. A non-linear current-voltage plot was obtained for the Fe1-xGax/GaAs Schottky contacts, characteristic of tunneling injection, and showed improved behavior with annealing.

  10. Gallium nitrogen arsenide and gallium arsenic bismuth: Structural and electronic properties of two resonant state semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Young, Erin Christina

    Semiconductor alloys that are lattice matched to GaAs but have a smaller energy band gap are of interest for numerous applications, including infrared lasers for telecommunications, high efficiency solar cells, and high electron mobility transistors. For high optoelectronic efficiency, these materials must be highly perfect single crystals with low defect densities. In this thesis, two substitutional GaAs-based alloy families, nitrides and bismides, are investigated experimentally. In the first alloy, GaNAs, the addition of N results in a large band gap reduction, though the small size of the N relative to As introduces tensile strain into the lattice, and the high electronegativity of N attracts electrons. The second alloy, GaAsBi, also has a smaller band gap and is formed by the addition of the very large Bi atom to GaAs, which introduces compressive strain and tends to attract holes. The experimental investigations of these alloys focused on elucidating the relationships between the growth process, atomic structure, and electronic properties. Films were grown by molecular beam epitaxy (MBE) with in-situ process monitoring and subject to post-growth structural and electronic characterization. For GaNAs and a related alloy. InGaNAs, degradation in luminescence efficiency, mobility and structural integrity were observed as the nitrogen content of the alloy was increased. A comprehensive study of strain relaxation in compressively strained InGaNAs and InGaAs quantum wells revealed that the nitrogen alloying did not have an effect on the critical thickness for dislocation formation, or the dislocation density in relaxed films. At large lattice mismatch, InGaNAs quantum wells were observed to relax by means of unusually oriented pure edge-type misfit dislocations aligned with <100> directions, likely due to the high stress associated with the large misfit. Use of bismuth as a non-incorporating surfactant during growth was successfully applied to improve the material quality of the nitrides. The Bi surface layer during growth was investigated using in-situ electron diffraction intensity measurements, and was found to improve both the smoothness of nitride films, by promoting a layer-by-layer growth mode, as well as increasing the photoluminescence (PL) intensity by a factor of 2.4. The improvement in PL is attributed to a reduction in nitrogen clusters with the surfactant. In addition, an increase in nitrogen content of up to 50% was observed in films grown with Bi over films grown without the surfactant. The increase in the nitrogen incorporation scales with the Bi flux, and saturates at full Bi coverage. A modified Langmuir model was applied to describe the behaviour of Bi on the surface, as well as the increase in nitrogen incorporation. The bismide alloy family requires atypical MBE growth conditions such as low substrate temperature and low As overpressure in order to achieve Bi incorporation. The conditions are close to those where Ga and Bi droplets form. However, in-situ light scattering was used to identify and avoid growth with droplets, resulting in films with high structural quality as determined by x-ray diffraction, and strong photoluminescence. 1% Bi alloying in GaAs was also found to result in a minimal 15% decrease in electron mobility, as compared with a 94% reduction for 1% N alloying. Finally, a preliminary investigation was made into the concept of co-doping GaAs with both N and Bi. GaNAsBi films showed room temperature PL at long wavelengths commensurate with contributions to band gap reduction from both N and Bi. Since lattice matching to GaAs can be achieved with a Bi/N ratio of 1.7, GaNAsBi and GaAsBi are promising new alloys for the applications described.

  11. Colloidal gallium indium oxide nanocrystals: a multifunctional light-emitting phosphor broadly tunable by alloy composition.

    PubMed

    Farvid, Shokouh S; Wang, Ting; Radovanovic, Pavle V

    2011-05-01

    We demonstrate compositionally tunable photoluminescence in complex transparent conducting oxide nanocrystals. Alloyed gallium indium oxide (GIO) nanocrystals with variable crystal structures are prepared by a colloidal method throughout the full composition range and studied by different structural and spectroscopic methods, including photoluminescence and X-ray absorption. The structures and sizes of the GIO nanocrystals can be simultaneously controlled, owing to the difference in the growth kinetics of In(2)O(3) and Ga(2)O(3) nanocrystals and the polymorphic nature of both materials. Using the synthesized nanocrystal series, we demonstrate the structural and compositional dependences of the photoluminescence of GIO nanocrystals. These dependences, induced by the interactions between specific defect sites acting as electron donors and acceptors, are used to achieve broad emission tunability in the visible spectral range at room temperature. The nature of the photoluminescence is identified as donor-acceptor pair recombination and changes with increasing indium content owing to the changes in the energy states of, and interactions between, donors and acceptors. Structural analysis of GIO nanocrystals by extended X-ray absorption fine structure spectroscopy reveals that In(3+) occupies only octahedral, rather than tetrahedral, sites in the spinel-type ?-Ga(2)O(3) nanocrystal host lattice, until reaching the substitutional incorporation limit of ca. 25%. The emission decay dynamics is also strongly influenced by the nanocrystal structure and composition. The oxygen vacancy defects, responsible for the observed photoluminescence properties, are also implicated in other functional properties, particularly conductivity, enabling the application of colloidal GIO nanocrystals as integrated optoelectronic materials. PMID:21476551

  12. Gallium scan

    MedlinePLUS

    Liver gallium scan; Bony gallium scan ... You will get a radioactive material called gallium injected into your vein. The gallium travels through the bloodstream and collects in the bones and certain organs. Your health care provider will ...

  13. Gallium and gallium arsenide

    SciTech Connect

    Kramer, D.

    1988-01-01

    As part of the Nation's growing concern with the competitiveness of U.S. firms in the world economy, especially with respect to advanced materials, the Bureau of Mines assessed the actual and potential recovery and manufacturing capabilities for gallium and gallium arsenide (GaAs). GaAs has advanced from a laboratory curiosity to a material with important high-tech applications within only the last few years, and although protected North American gallium supplies are currently considered adequate, consumption could grow to the point that this assessment would need reevaluation.

  14. Chemical short range order and magnetic correction in liquid manganese-gallium zero alloy

    NASA Astrophysics Data System (ADS)

    Grosdidier, B.; Ben Abdellah, A.; Osman, S. M.; Ataati, J.; Gasser, J. G.

    2015-12-01

    The Mn66Ga34 alloy at this particular composition is known to be zero alloy in which the linear combination of the two neutron scattering lengths weighted by the atomic compositions vanish. Thus for this specific concentration, the effect of the partial structure factors SNN and SNC is cancelled by a weighted term, which value is zero. Then the measured total structure factor S(q) gives directly the concentration-concentration structure factor SCC(q). We present here the first experimental results of neutron diffraction on the Mn66Ga34 "null matrix alloy" at 1050 °C. The main peak of the experimental SCC(q) gives a strong evidence of a hetero-atomic chemical order in this coordinated alloy. This order also appears in real space radial distribution function which is calculated by the Fourier transform of the structure factor. The degree of hetero-coordination is discussed together with other manganese-polyvalent alloys. However manganese also shows abnormal magnetic scattering in the alloy structure factor which must be corrected. This correction gives an experimental information on the mean effective spin of manganese in this liquid alloy. We present the first critical theoretical calculations of the magnetic correction factor in Mn-Ga zero-alloy based on our accurate experimental measurements of SCC(q).

  15. Thermodynamics of reaction of praseodymium with gallium-indium eutectic alloy

    NASA Astrophysics Data System (ADS)

    Melchakov, S. Yu.; Ivanov, V. A.; Yamshchikov, L. F.; Volkovich, V. A.; Osipenko, A. G.; Kormilitsyn, M. V.

    2013-06-01

    Thermodynamic properties of Ga-In eutectic alloys saturated with praseodymium were determined for the first time employing the electromotive force method. The equilibrium potentials of the Pr-In alloys saturated with praseodymium (8.7-12.1 mol.% Pr) and Pr-Ga-In alloys (containing 0.0012-6.71 mol.% Pr) were measured between 573-1073 K. Pr-In alloy containing solid PrIn3 with known thermodynamic properties was used as the reference electrode when measuring the potentials of ternary Pr-In-Ga alloys. Activity, partial and excessive thermodynamic functions of praseodymium in alloys with indium and Ga-In eutectic were calculated. Activity (a), activity coefficients (γ) and solubility (X) of praseodymium in the studied temperature range can be expressed by the following equations: lgaα-Pr(In) = 4.425 - 11965/T ± 0.026. lgаα-Pr(Ga-In) = 5.866 - 14766/T ± 0.190. lgγα-Pr(Ga-In) = 2.351 - 9996/T ± 0.39. lgХPr(Ga-In) = 3.515 - 4770/T ± 0.20.

  16. Silver catalyzed gallium phosphide nanowires integrated on silicon and in situ Ag-alloying induced bandgap transition

    NASA Astrophysics Data System (ADS)

    Huang, Kangrong; Zhang, Zhang; Zhou, Qingwei; Liu, Liwei; Zhang, Xiaoyan; Kang, Mengyang; Zhao, Fuli; Lu, Xubing; Gao, Xingsen; Liu, Junming

    2015-06-01

    In this work, we demonstrate a silver catalyzed heteroepitaxial growth of gallium phosphide nanowires (GaP NWs) on silicon. The morphology and growth direction of GaP NWs on differently orientated Si substrates were investigated. From crystallographic analysis, we inferred that Ag from catalyst is incorporated into the GaP during the chemical beam epitaxy (CBE) process. Using the PL spectrum and time-resolved emission spectroscopy, the optical properties of Ag-catalyzed GaP NWs were greatly modified, with bandgap transitions in the blue range. The Raman characterizations further confirmed the Ag incorporation into GaP during the growth. From the bandgap calculations, it was deduced that Ag was substituted on the Ga site with bandgap broadening. The in situ Ag-alloying during the growth of Ag-catalyzed GaP NWs greatly modified the band structure of GaP, and could lead to further applications in optoelectronics for low-dimensional GaP-based nanomaterials.

  17. Effect of hydrogen and magnetic field on the mechanical behavior of magnetostrictive iron-gallium alloys

    NASA Astrophysics Data System (ADS)

    Ramanathan, Meenakshisundaram

    Magnetostrictive Fe-Ga and other iron-based alloys are candidates for use in sensing, actuation and large-scale energy harvesting applications. Exposure to aqueous electrochemical environments is anticipated in some of these applications which could potentially introduce hydrogen into the alloy and cause severe ductility reduction due to hydrogen embrittlement. These alloys may also be simultaneously exposed to magnetic field. This study therefore examines the effect of hydrogen and magnetic field on the mechanical behavior of these alloys. This study could also provide an understanding of the relationship between hydrogen embrittlement and magnetoelastic behavior in these alloys. In this work, the effect of hydrogen and magnetic field on the fracture behavior of [100]-oriented Fe-17.5 at.% Ga alloy single crystals and polycrystalline Fe-15 at.% Ga alloy were examined. Three-point bend tests and tensile tests were used to study the fracture behavior. Tests were done in different conditions to understand the effect of hydrogen and magnetic field on the fracture behavior of these materials. Hydrogen loading was done by in-situ electrochemical charging and magnetic field was applied to the samples either by using Nd2Fe 14B permanent magnets or by using solenoid coils. Before doing the three-point bend test on the Fe-Ga single crystal samples, tests were done using high-strength AISI 4340 steel to optimize the testing procedures and parameters. In all cases, the samples tested with hydrogen charging show a drastic reduction in ductility and fracture stress values. In the case of [100]-oriented Fe-17.5 at.% Ga alloy single crystal samples tested with hydrogen charging, the presence of applied magnetic field increased the stress required for fracture and a corresponding increase in bending strain values. This is attributed to a decrease of the elastic modulus values on the application of magnetic field in this magnetostrictive alloy. The hydrogen embrittlement was characterized by a change in fracture surface from a ductile type fracture to a brittle cleavage type fracture. Acoustic emission signals collected during the test correspond to the fracture behavior.

  18. Influence of water on the interfacial behavior of gallium liquid metal alloys.

    PubMed

    Khan, Mohammad R; Trlica, Chris; So, Ju-Hee; Valeri, Michael; Dickey, Michael D

    2014-12-24

    Eutectic gallium indium (EGaIn) is a promising liquid metal for a variety of electrical and optical applications that take advantage of its soft and fluid properties. The presence of a rapidly forming oxide skin on the surface of the metal causes it to stick to many surfaces, which limits the ability to easily reconfigure its shape on demand. This paper shows that water can provide an interfacial slip layer between EGaIn and other surfaces, which allows the metal to flow smoothly through capillaries and across surfaces without sticking. Rheological and surface characterization shows that the presence of water also changes the chemical composition of the oxide skin and weakens its mechanical strength, although not enough to allow the metal to flow freely in microchannels without the slip layer. The slip layer provides new opportunities to control and actuate liquid metal plugs in microchannels-including the use of continuous electrowetting-enabling new possibilities for shape reconfigurable electronics, sensors, actuators, and antennas. PMID:25469554

  19. Measurement of field-dependence elastic modulus of iron-gallium alloy using tensile test

    SciTech Connect

    Yoo, Jin-Hyeong; Flatau, Alison B.

    2005-05-15

    An experimental approach is used to identify Galfenol material properties under dc magnetic bias fields. Dog-bone-shaped specimens of single crystal Fe{sub 100-x}Ga{sub x}, where 18.6{<=}x{<=}33.2, underwent tensile testing along two crystallographic axis orientations, [110] and [100]. Young's modulus and Poisson's ratio sensitivity to magnetic fields and stoichiometry are investigated. Data are presented that demonstrate the dependence of these properties on applied magnetic-field levels and provide a substantial assessment of the trends in material properties for performance of alloys of different stoichiometries under varied operating conditions.

  20. Native point defects in indium nitride and indium-rich indium gallium nitride alloys

    NASA Astrophysics Data System (ADS)

    Li, Sonny Xiao-Zhe

    The recent discovery of the narrow bandgap of InN of 0.7 eV has attracted strong scientific interests on the fundamental properties and possible applications of InN and its ternary alloys. The first part of this thesis was inspired by the proposal of using InxGa1-x N alloy to build high efficiency solar cell for space applications. To test the irradiation hardness of InN and InxGa 1-xN, we have irradiated numerous samples with energetic particles (1-2 MeV electrons, protons, and 4He+ particles). InN and InxGa1-xN displayed superior radiation hardness over current multi-junction solar cell materials such as GaAs and GaInP in terms of electronic and optical properties. Free electron concentrations in InN and In-rich InxGa 1-xN increased with irradiation dose but saturated at a sufficiently high damage dose. According to the amphoteric defect model, the doping effect and the electron concentration saturation originates from irradiation-induced native donors and Fermi level pinning at the Fermi level stabilization energy (EFS). The EFS, an average energy of all localized native defects, dictates the electronic properties (donor or acceptor) of the native point defects. The electron concentration saturation and Fermi level pinning lead to profound changes in the optical properties. Absorption spectra shift to higher energy due to the conduction band-filling effect (Burstein-Moss shift). Photoluminescence (PL) signals broadened and shifted to higher energy as the k-conservation rule collapsed with irradiation damage. The PL intensity of increased slightly with higher carrier concentration before it became quenched by the irradiation-induced carrier traps. Capacitance-voltage (CV) measurements show that the pinning of the surface Fermi energy at EFS is also responsible for the surface electron accumulation effect in InN and In-rich In xGa1-xN alloys. The second part of this thesis focuses on the hydrostatic pressure dependence of group III-nitride alloys. The hydrostatic pressure dependence of the narrow bandgap of InN, In-rich InxGa1-x N (0 < x ? 0.5), and InyAl 1-yN (y = 0.25) alloys was measured by optical absorption and PL experiments with samples mounted in diamond anvil cells. The pressure coefficient of InN was experimentally determined for the first time to be 3.0+/-0.1 meV/kbar. The PL signal exhibits a much weaker pressure dependence than the direct bandgap, which is attributed to the emission process associated with highly localized states. Using the localized states emission as an energy reference, the deformation potential of the band edges of InN and In0.5Ga0.5N were determined.

  1. Metal organic chemical vapor deposition of indium gallium nitride alloys on nanowire substrates

    NASA Astrophysics Data System (ADS)

    Pendyala, Chandrashekhar

    Rising environmental concerns due to our rising population and energy demand along with our excessive dependence on fossil fuels has created an urgent need to find clean, renewable and carbon free source of energy. Photoelectrochemical (PEC) water splitting is a clean and carbon free process where hydrogen is produced from water and sunlight using a semiconductor. To date, no material has been found that meets the stringent requirements of band gap, band edge positions and stability for spontaneous water splitting. It is however possible to use two materials to meet the criteria. In this regard, InGaN alloys with indium rich composition are interesting materials. However, very little is understood about the synthesis of thick (200--300 nm), single crystal InGaN layers for PEC applications. Heteroepitaxial growth of InGaN films on planar substrates induces phase segregation due to stress. Here, we proposed to investigate the role of nanowires as strain relaxing substrates to mitigate phase segregation. GaN nanowires with controlled orientation and small diameters were synthesized on various substrates by controlling the temperature and material flux to control the nuclei formation. The mechanism to control the growth mode using equilibrium solubility was validated with the III-Sb system. InGaN layers with controlled composition were synthesized on the GaN nanowires in a custom built MOCVD reactor. The InGaN layers are single crystalline, without any phase segregation. It was observed that only nanowires with diameters < 30 nm led to the observation while nanowires with larger diameters ( 100 nm) act as planar substrates resulting in polycrystalline growth. The heteroepitaxial growth was observed to evolve from initial InGaN islands coalescing into single crystalline shell on the GaN nanowires. Morphology of the InGaN shells was observed to depend on the orientation of the GaN nanowire substrates with c-GaN nanowires resulting in hexagonal shell while a-GaN nanowires had rectangular shell. We also investigated a novel material system GaSbN using theoretical techniques for its applicability toward PEC water splitting. The electronic structure of GaSbN system with dilute antimony was investigated using theoretical simulations. Results indicate that only very small antimony content (< 10%) is required to achieve the right band gap. Most importantly, the band edges of GaSbN alloy seem to straddle the water splitting potentials that makes it a potential direct water splitting material.

  2. Evaluation of magnetostrictive shunt damper performance using Iron (Fe)-Gallium (Ga) alloy

    NASA Astrophysics Data System (ADS)

    Yoo, JinHyeong; Murray, Andrew; Flatau, Alison B.

    2014-04-01

    This study presents the possibility of dissipating mechanical energy with a proof-of-concept prototype magnetostrictive based shunt circuit using passive electrical components. The device consists of a polycrystalline galfenol (Fe-Ga alloy) strip bonded to a brass cantilever beam. Two brass pieces, each containing a permanent magnet, are used to mass load each end of the beam and to provide a magnetic bias field through the galfenol strip. The voltage induced in an induction coil closely wound around the cantilever beam captures the time rate of change of magnetic flux within the galfenol strip as the beam vibrates. The first bending-mode resonant frequency of the device was 69.42 Hz. To dissipate the electrical voltage from the device, a shunt circuit is attached. The effective mechanical impedance for the magnetostrictive shunt circuit is derived. The shunted model is specialized for two shunt circuits: the case of a resistor and that of a capacitance. The experimental results for both the resistive and capacitance shunt circuits validate the shunted magnetostrictive damping model for couple of cased of resistance and capacitance.

  3. Gallium Safety in the Laboratory

    SciTech Connect

    Lee C. Cadwallader

    2003-06-01

    A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

  4. Gallium Safety in the Laboratory

    SciTech Connect

    Cadwallader, L.C.

    2003-05-07

    A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

  5. Gallium--A smart metal

    USGS Publications Warehouse

    Foley, Nora; Jaskula, Brian

    2013-01-01

    Gallium is a soft, silvery metallic element with an atomic number of 31 and the chemical symbol Ga. The French chemist Paul-Emile Lecoq de Boisbaudran discovered gallium in sphalerite (a zinc-sulfide mineral) in 1875 using spectroscopy. He named the element "gallia" after his native land of France (formerly Gaul; in Latin, Gallia). The existence of gallium had been predicted in 1871 by Dmitri Mendeleev, the Russian chemist who published the first periodic table of the elements. Mendeleev noted a gap in his table and named the missing element "eka-aluminum" because he determined that its location was one place away from aluminum in the table. Mendeleev thought that the missing element (gallium) would be very much like aluminum in its chemical properties, and he was right. Solid gallium has a low melting temperature (~29 degrees Celsius, or C) and an unusually high boiling point (~2,204 C). Because of these properties, the earliest uses of gallium were in high-temperature thermometers and in designing metal alloys that melt easily. The development of a gallium-based direct band-gap semiconductor in the 1960s led to what is now one of the most well-known applications for gallium-based products--the manufacture of smartphones and data-centric networks.

  6. Development of gallium aluminum phosphide electroluminescent diodes

    NASA Technical Reports Server (NTRS)

    Chicotka, R. J.; Lorenz, M. R.; Nethercot, A. H.; Pettit, G. D.

    1972-01-01

    Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.

  7. Gallium complexes and solvent extraction of gallium

    SciTech Connect

    Coleman, J.P.; Graham, C.R.; Monzyk, B.F.

    1988-05-03

    This patent describes a process for recovering gallium from aqueous solutions containing gallium which comprises contacting such a solution with an organic solvent containing at least 2% by weight of a water-insoluble N-organo hydroxamic acid having at least about 8 carbon atoms to extract gallium, and separating the gallium loaded organic solvent phase from the aqueous phase.

  8. Gallium trace on-line preconcentration/separation and determination using a polyurethane foam mini-column and flame atomic absorption spectrometry. Application in aluminum alloys, natural waters and urine.

    PubMed

    Anthemidis, Aristidis N; Zachariadis, George A; Stratis, John A

    2003-07-27

    A sensitive and selective flow injection time-based method for on-line preconcentration/separation and determination of gallium by flame atomic absorption spectrometry at trace levels was developed. The on-line formed gallium chloride complex is sorbed onto a polyether-type polyurethane foam mini-column, followed by on-line quantitative elution with isobutyl methyl ketone and direct introduction into the flame pneumatic nebulizer of the atomic absorption spectrometer. All chemical and flow variables of the system as well as the possible interferences were studied. The manner of strong HCl solutions propulsion was investigated and established using a combination of two displacement bottles. For 90 s preconcentration time, a sample frequency of 28 h(-1), an enhancement factor of 40, a detection limit of 6 microg l(-1) and a precision expressed as relative standard deviation (s(r)) of 3.3% (at 1.00 mg l(-1)) were achieved. The calibration curve is linear over the concentration range 0.02-3.00 mg l(-1). The accuracy of the developed method was sufficient and evaluated by the analysis of a silicon-aluminum alloy standard reference material. Finally, it was successfully applied to gallium determination in commercial aluminum alloys, natural waters and urine. PMID:18969117

  9. Robust solution procedure for the discrete energy-averaged model on the calculation of 3D hysteretic magnetization and magnetostriction of iron-gallium alloys

    NASA Astrophysics Data System (ADS)

    Tari, H.; Scheidler, J. J.; Dapino, M. J.

    2015-06-01

    A reformulation of the Discrete Energy-Averaged model for the calculation of 3D hysteretic magnetization and magnetostriction of iron-gallium (Galfenol) alloys is presented in this paper. An analytical solution procedure based on an eigenvalue decomposition is developed. This procedure avoids the singularities present in the existing approximate solution by offering multiple local minimum energy directions for each easy crystallographic direction. This improved robustness is crucial for use in finite element codes. Analytical simplifications of the 3D model to 2D and 1D applications are also presented. In particular, the 1D model requires calculation for only one easy direction, while all six easy directions must be considered for general applications. Compared to the approximate solution procedure, it is shown that the resulting robustness comes at no expense for 1D applications, but requires almost twice the computational effort for 3D applications. To find model parameters, we employ the average of the hysteretic data, rather than anhysteretic curves, which would require additional measurements. An efficient optimization routine is developed that retains the dimensionality of the prior art. The routine decouples the parameters into exclusive sets, some of which are found directly through a fast preprocessing step to improve accuracy and computational efficiency. The effectiveness of the model is verified by comparison with existing measurement data.

  10. Compositional control of the mixed anion alloys in gallium-free InAs/InAsSb superlattice materials for infrared sensing

    NASA Astrophysics Data System (ADS)

    Haugan, H. J.; Szmulowicz, F.; Mahalingam, K.; Brown, G. J.; Bowers, S. L.; Peoples, J. A.

    2015-08-01

    Gallium (Ga)-free InAs/InAsSb superlattices (SLs) are being actively explored for infrared detector applications due to the long minority carrier lifetimes observed in this material system. However, compositional and dimensional changes through antimony (Sb) segregation during InAsSb growth can significantly alter the detector properties from the original design. At the same time, precise compositional control of this mixed-anion alloy system is the most challenging aspect of Ga-free SL growth. In this study, the authors establish epitaxial conditions that can minimize Sb surface segregation during growth in order to achieve high-quality InAs/InAsSb SL materials. A nominal SL structure of 77 InAs/35 InAs0.7Sb0.3 that is tailored for an approximately six-micron response at 150 K was used to optimize the epitaxial parameters. Since the growth of mixed-anion alloys is complicated by the potential reaction of As2 with Sb surfaces, the authors varied the deposition temperature (Tg) under a variety of Asx flux conditions in order to control the As2 surface reaction on a Sb surface. Experimental results reveal that, with the increase of Tg from 395 to 440 C, Sb-mole fraction x in InAs1-xSbx layers is reduced by 21 %, under high As flux condition and only by 14 %, under low As flux condition. Hence, the Sb incorporation efficiency is extremely sensitive to minor variations in epitaxial conditions. Since a change in the designed compositions and effective layer widths related to Sb segregation disrupts the strain balance and can significantly impact the long-wavelength threshold and carrier lifetime, further epitaxial studies are needed in order to advance the state-of-the-art of this material system.

  11. Bismuth in gallium arsenide: Structural and electronic properties of GaAs1-xBix alloys

    NASA Astrophysics Data System (ADS)

    Reshak, Ali Hussain; Kamarudin, H.; Auluck, S.; Kityk, I. V.

    2012-02-01

    The structural and electronic properties of cubic GaAs1-xBix alloys with bismuth concentration 0.0, 0.25, 0.50, 0.75 and 1.0 are studied using the special quasi-random structures' (SQS) approach of Zunger along with the generalized gradient approximation (GGA) and the Engel-Vosko generalized gradient approximation (EV-GGA). The lattice constant, bulk modulus, derivative of bulk modulus and energy gap vary with bismuth concentration nonlinearly. The present calculations show that the band gap decreases substantially with increasing bismuth concentration and that spin-orbit coupling influences the nature of bonding at high Bi concentrations.

  12. Grain boundary imaging, gallium diffusion and the fracture behavior of Al-Zn Alloy - An in situ study

    NASA Astrophysics Data System (ADS)

    Tsai, W. L.; Hwu, Y.; Chen, C. H.; Chang, L. W.; Je, J. H.; Lin, H. M.; Margaritondo, G.

    2003-01-01

    Phase contrast radiology using unmonochromatic synchrotron X-ray successfully imaged the grain boundaries of Al and AlZn alloy without contrast agent. Combining the high penetration of X-ray and the possibility of 3D reconstruction by tomorgraphy or stereography method, this approach can be very used for nondestructive characterization of polycrystalline materials. By examine the images with 3D perspective, we were able locate the observed void-like defects which lies exclusively on the grain boundary and identify their origin from last stage of the rolling process. We studied the Ga Liquid metal diffusion in the AlZn alloy, under different temperature and stress conditions. High resolution images, 2 ?m, of Ga liquid metal diffusion in AlZn were obtained in real time and diffusion paths alone grain boundaries and surfaces were clearly identified. Embrittled AlZn responses to the tensile stress and fractures in a drastic different manner than the pure AlZn. These results, although very much expected from the known weakening effect of the liquid metal embrittlement demonstrated, however, that this particular radiology method is fully capable of dynamic study in the micrometer scale.

  13. Compatibility of ITER candidate structural materials with static gallium

    SciTech Connect

    Luebbers, P.R.; Michaud, W.F.; Chopra, O.K.

    1993-12-01

    Tests were conducted on the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor, e.g., Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy, as well as Armco iron, Nickel 270, and pure chromium. Type 316 stainless steel is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400{degrees}C, corrosion rates are {approx}4.0, 0.5, and 0.03 mm/yr for type 316 SS, Inconel 625, and Nb-5 Mo- 1 Zr alloy, respectively. The pure metals react rapidly with gallium. In contrast to findings in earlier studies, pure iron shows greater corrosion than nickel. The corrosion rates at 400{degrees}C are {ge}88 and 18 mm/yr, respectively, for Armco iron and Nickel 270. The results indicate that at temperatures up to 400{degrees}C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The solubility data for pure metals and oxygen in gallium are reviewed. The physical, chemical, and radioactive properties of gallium are also presented. The supply and availability of gallium, as well as price predictions through the year 2020, are summarized.

  14. Investigations in gallium removal

    SciTech Connect

    Philip, C.V.; Pitt, W.W.; Beard, C.A.

    1997-11-01

    Gallium present in weapons plutonium must be removed before it can be used for the production of mixed-oxide (MOX) nuclear reactor fuel. The main goal of the preliminary studies conducted at Texas A and M University was to assist in the development of a thermal process to remove gallium from a gallium oxide/plutonium oxide matrix. This effort is being conducted in close consultation with the Los Alamos National Laboratory (LANL) personnel involved in the development of this process for the US Department of Energy (DOE). Simple experiments were performed on gallium oxide, and cerium-oxide/gallium-oxide mixtures, heated to temperatures ranging from 700--900 C in a reducing environment, and a method for collecting the gallium vapors under these conditions was demonstrated.

  15. Bulk cubic gallium nitride

    SciTech Connect

    Purdy, A.P.

    1999-01-01

    Bulk cubic gallium nitride is made by charging into a reaction vessel to a fill of 25--95% having a temperature difference between its ends of at least 1 deg C a gallium precursor, sufficient amount of an acid mineralizer to form product zinc blende gallium nitride, and sufficient amount of ammonia to at least solubilize the precursor; sealing the reaction vessel; heating contents of the reaction vessel to at least 150 deg C while autogenously pressurizing contents of the reaction vessel to at least 500 psi for a duration sufficient to form the product zinc blende gallium nitride; cooling contents of the reaction vessel; and removing from the reaction vessel the product zinc blende gallium nitride.

  16. Preventing Supercooling Of Gallium

    NASA Technical Reports Server (NTRS)

    Massucco, Arthur A.; Wenghoefer, Hans M.; Wilkins, Ronnie

    1994-01-01

    Principle of heterogeneous nucleation exploited to prevent gallium from supercooling, enabling its use as heat-storage material that crystallizes reproducibly at its freezing or melting temperature of 29 to 30 degrees C. In original intended application, gallium used as heat-storage material in gloves of space suits. Terrestrial application lies in preparation of freezing-temperature reference samples for laboratories. Principle of heterogeneous nucleation also exploited similarly in heat pipes filled with sodium.

  17. Interactions of Zircaloy Cladding with Gallium: Final Report

    SciTech Connect

    D.F. Wilson; E.T. Manneschmidt; J.F. King; J.P. Strizak; J.R. DiStefano

    1998-09-01

    The U.S. Department of Energy has established a dual-track approach to the disposition of plutonium arising from the dismantling of nuclear weapons. Both immobilization and reactor-based mixed-oxide (MOX) fuel technologies are being evaluated. The reactor-based MOX fuel option requires assessment of the potential impact of concentrations of gallium (on the order of 1 to 10 ppm), not present in conventional MOX fhel, on cladding material performance. Three previous repmts"3 identified several compatibility issues relating to the presence of gallium in MOX fuel and its possible reaction with fiel cladding. Gallium initially present in weapons-grade (WG) plutonium is largely removed during processing to produce MOX fhel. After blending the plutonium with uranium, only 1 to 10 ppm gallium is expected in the sintered MOX fuel. Gallium present as gallium oxide (G~OJ could be evolved as the suboxide (G~O). Migration of the evolved G~O and diffusion of gallium in the MOX matrix along thermal gradients could lead to locally higher concentrations of G~03. Thus, while an extremely low concentration of gallium in MOX fiel almost ensures a lack of significant interaction of gallium whh Zircaloy fhel cladding, there remains a small probability that corrosion effects will not be negligible. General corrosion in the form of surface alloying resulting from formation of intermetallic compounds between Zircaloy and gallium should be ma& limited and, therefore, superficial because of the expected low ratio of gallium to the surface area or volume of the Zircaloy cladding. Although the expected concentration of gallium is low and there is very limited volubility of gallium in zirconium, especially at temperatures below 700 "C,4 grain boundary penetration and liquid metal embrittlement (LME) are forms of localized corrosion that were also considered. One fuel system darnage mechanism, pellet clad interaction, has led to some failure of the Zircaloy cladding in light-water reactors (LWRS). This has been attributed to stresses in the cladding and one or more aggressive fission products. Stress corrosion cracking by iodines' 6 and LME by cadmium7>8 have been reported, and it is known that Zircaloy can be embrittled by some low-melting metals, (e.g., mercury).g LME is a form of environmentally induced embrittlement that can induce cracking or loss of ductility. LME requties wetting and a tensile stress, but it does not require corrosion penetration. Experimentally, it has been demonstrated that gallium can cause embrittlement of some alloys (e.g., aluminum) at low temperatures,'"' ] ] but experiments relative to LME of zirconium by gallium have been limited and inconclusive.*2 This report describes a series of tests designed to establish the effects of low levels of residual gallium in WG-MOX fhel on its compatibility with Zircaloy. In addition, to establish damage mechanisms it was important to understand types of cladding interactions and available stiety margins with respect to gallium concentration.

  18. Visible light electroluminescent diodes of indium-gallium phosphide

    NASA Technical Reports Server (NTRS)

    Clough, R.; Richman, D.; Tietjen, J.

    1970-01-01

    Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.

  19. Aluminum battery alloys

    DOEpatents

    Thompson, David S.; Scott, Darwin H.

    1985-01-01

    Aluminum alloys suitable for use as anode structures in electrochemical cs are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

  20. Aluminum battery alloys

    DOEpatents

    Thompson, D.S.; Scott, D.H.

    1984-09-28

    Aluminum alloys suitable for use as anode structures in electrochemical cells are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

  1. Aluminum alloy and associated anode and battery

    SciTech Connect

    Tarcy, G.P.

    1990-08-21

    This patent describes an aluminum alloy. It comprises: eutectic amounts of at least two alloying elements selected from the group consisting of bismuth, cadmium, scandium, gallium, indium, lead, mercury, thallium, tin, and zinc with the balance being aluminum and the alloying elements being about 0.01 to 3.0 percent by weight of the alloy.

  2. Resistivity of the liquid gallium-lead miscibility gap system

    NASA Astrophysics Data System (ADS)

    Abdellah, A. Ben; Gasser, J. G.; Makradi, A.; Grosdidier, B.; Hugel, J.

    2003-11-01

    We present our electrical resistivity measurements of the gallium-lead system which shows a very large miscibility gap between 2.4 and 94.5 at. % lead with a critical temperature of 606 C and composition of 40 at. % lead. A small negative deviation of the experimental temperature coefficient of the resistivity (TCR) appears near the critical composition of the alloy. The resistivity of the alloys is interpreted and discussed in terms of the extended Faber-Ziman formula using the t-matrix formalism with hard-sphere and experimental (for pure metals only) structure factors. An approach is proposed, taking into account the information given by the experimental density of states which allowed us to explain the resistivity of pure lead and that of the liquid gallium-lead alloys. As a conclusion it was shown that two electrons in the conduction band of liquid lead better explain the experimental resistivity than four electrons.

  3. Strained gallium nitride nanowires

    NASA Astrophysics Data System (ADS)

    Seo, Hee Won; Bae, Seung Yong; Park, Jeunghee; Yang, Hyunik; Park, Kwang Soo; Kim, Sangsig

    2002-06-01

    Gallium nitride nanowires were synthesized on silicon substrates by chemical vapor deposition using the reaction of gallium and gallium nitride mixture with ammonia. Iron nanoparticles were used as catalysts. The diameter of nanowires is uniform as 25 nm and the lengths are 20-40 ?m. The nanowires have single crystalline wurtzite structure with a few stacking faults. A careful examination into x-ray diffraction and Raman scattering data revealed that the separations of the neighboring lattice planes along the growth direction are shorter than those of bulk gallium nitride. The nanowires would experience biaxial compressive stresses in the inward radial direction and the induced tensile uniaxial stresses in the growth direction. The shifts of the band gap due to the stresses have been estimated using the experimental data, showing that the reduction of the band gap due to the tensile stresses can occur more significantly than the increase due to the compressive stresses. The temperature-dependent photoluminescence (PL) of the nanowires exhibit a strong broad band in the energy range of 2.9-3.6 eV. The PL could originate from the recombination of bound excitons. The strong room-temperature PL would be in line with the existence of strains inside the nanowires. The peak appears at the lower energy than that of the epilayer, which is consistent with the decrease of the band gap predicted from the x-ray diffraction and Raman data. The various strengths of stress may result in the widely distributed PL energy position.

  4. Gallium scans in Paget's sarcoma

    SciTech Connect

    Yeh, S.D.; Rosen, G.; Benua, R.S.

    1982-12-01

    Bone and gallium scans were performed in twelve patients with Paget's sarcoma. Most of these patients had polyostotic Paget's disease. The lesions with sarcomatous changes were usually associated with less /sup 99m/Tc MDP uptake as compared with Pagetoid bone which was not sarcomatous. Gallium uptake in the tumor area was proportionally higher than the MDP uptake and appeared quite irregular. Follow-up scans were available in a limited number of patients. Temporary response to chemotherapy was reflected by the decreased gallium uptake in the tumor area. Gallium scans appear to be useful in confirming the diagnosis of Paget's sarcoma and may be valuable in monitoring therapeutic response.

  5. Compatibility of ITER candidate materials with static gallium

    SciTech Connect

    Luebbers, P.R.; Chopra, O.K.

    1995-09-01

    Corrosion tests have been conducted to determine the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor (ITER) first wall/blanket systems, e.g., Type 316 stainless steel (SS), Inconel 625, and Nb-5 Mo-1 Zr. The results indicate that Type 316 SS is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400 C, corrosion rates for Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy are {approx} 4.0, 0.5, and 0.03 mm/yr, respectively. Iron, nickel, and chromium react rapidly with gallium. Iron shows greater corrosion than nickel at 400 C ({ge} 88 and 18 mm/yr, respectively). The present study indicates that at temperatures up to 400 C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The growth of intermetallic compounds may control the overall rate of corrosion.

  6. Gallium interactions with Zircaloy

    SciTech Connect

    Woods, A.L.; West, M.K.

    1999-01-01

    This study focuses on the effects of gallium ion implantation into zircaloy cladding material to investigate the effects that gallium may have in a reactor. High fluence ion implantation of Ga ions was conducted on heated Zircaloy-4 in the range of 10{sup 16}--10{sup 18} Ga ions/cm2. Surface effects were studied using SEM and electron microprobe analysis. The depth profile of Ga in the Zircaloy was characterized with Rutherford backscattering and SIMS techniques. Results indicate that the Zirc-4 is little affected up to a fluence of 10{sup 17} Ga ions/cm{sup 2}. After implantation of 10{sup 18} Ga ions/cm{sup 2}, sub-grain features on the order of 2 {micro}m were observed which may be due to intermetallic compound formation between Ga and Zr. For the highest fluence implant, Ga content in the Zirc-4 reached a saturation value of between 30 and 40 atomic %; significant enhanced diffusion was observed but gallium was not seen to concentrate at grain boundaries.

  7. Oxidative dissolution of gallium arsenide and separation of gallium from arsenic

    SciTech Connect

    Coleman, J.P.; Monzyk, B.F.

    1988-07-26

    The method of dissociating gallium arsenide into a gallium-containing component and an arsenic-containing component, is described which comprises contacting the gallium arsenide with an oxidizing agent and a liquid comprising hydroxamic acid to convert the gallium to a gallium-hydroxamic acid complex and to oxidize the arsenic to a positive valence state.

  8. Alloy

    NASA Astrophysics Data System (ADS)

    Cabeza, Sandra; Garcés, Gerardo; Pérez, Pablo; Adeva, Paloma

    2014-07-01

    The Mg98.5Gd1Zn0.5 alloy produced by a powder metallurgy route was studied and compared with the same alloy produced by extrusion of ingots. Atomized powders were cold compacted and extruded at 623 K and 673 K (350 °C and 400 °C). The microstructure of extruded materials was characterized by α-Mg grains, and Mg3Gd and 14H-LPSO particles located at grain boundaries. Grain size decreased from 6.8 μm in the extruded ingot, down to 1.6 μm for powders extruded at 623 K (350 °C). Grain refinement resulted in an increase in mechanical properties at room and high temperatures. Moreover, at high temperatures the PM alloy showed superplasticity at high strain rates, with elongations to failure up to 700 pct.

  9. Fabrication of Aluminum Gallium Nitride/Gallium Nitride MESFET And It's Applications in Biosensing

    NASA Astrophysics Data System (ADS)

    Alur, Siddharth

    Gallium Nitride has been researched extensively for the past three decades for its application in Light Emitting Diodes (LED's), power devices and UV photodetectors. With the recent developments in crystal growth technology and the ability to control the doping there has been an increased interest in heterostructures formed between Gallium nitride and it's alloy Aluminium Gallium Nitride. These heterostructures due to the combined effect of spontaneous and piezoelectric effect can form a high density and a high mobility electron gas channel without any intentional doping. This high density electron gas makes these heterostructures ideal to be used as sensors. Gallium Nitride is also chemically very stable. Detection of biomolecules in a fast and reliable manner is very important in the areas of food safety and medical research. For biomolecular detection it is paramount to have a robust binding of the probes on the sensor surface. Therefore, in this dissertation, the fabrication and application of the AlGaN/GaN heterostructures as biological sensors for the detection of DNA and Organophosphate hydrolase enzyme is discussed. In order to use these AlGaN/GaN heterostructures as biological sensors capable of working in a liquid environment photodefinable polydimethyl-siloxane is used as an encapsulant. The immobilization conditions for a robust binding of thiolated DNA and the catalytic receptor enzyme organophosphate hydrolase on gold surfaces is developed with the help of X-ray photoelectron spectroscopy. DNA and OPH are detected by measuring the change in the drain current of the device as a function of time.

  10. Gallium nitride nanotube lasers

    SciTech Connect

    Li, Changyi; Liu, Sheng; Hurtado, Antonio; Wright, Jeremy Benjamin; Xu, Huiwen; Luk, Ting Shan; Figiel, Jeffrey J.; Brener, Igal; Brueck, Steven R. J.; Wang, George T.

    2015-01-01

    Lasing is demonstrated from gallium nitride nanotubes fabricated using a two-step top-down technique. By optically pumping, we observed characteristics of lasing: a clear threshold, a narrow spectral, and guided emission from the nanotubes. In addition, annular lasing emission from the GaN nanotube is also observed, indicating that cross-sectional shape control can be employed to manipulate the properties of nanolasers. The nanotube lasers could be of interest for optical nanofluidic applications or application benefitting from a hollow beam shape.

  11. Gallium Arsenide Domino Circuit

    NASA Technical Reports Server (NTRS)

    Yang, Long; Long, Stephen I.

    1990-01-01

    Advantages include reduced power and high speed. Experimental gallium arsenide field-effect-transistor (FET) domino circuit replicated in large numbers for use in dynamic-logic systems. Name of circuit denotes mode of operation, which logic signals propagate from each stage to next when successive stages operated at slightly staggered clock cycles, in manner reminiscent of dominoes falling in a row. Building block of domino circuit includes input, inverter, and level-shifting substages. Combinational logic executed in input substage. During low half of clock cycle, result of logic operation transmitted to following stage.

  12. Gallium phosphide energy converters

    NASA Technical Reports Server (NTRS)

    Sims, P. E.; DiNetta, Louis C.; DuganCavanagh, K.; Goetz, M. A.

    1996-01-01

    Betavoltaic power supplies based on gallium phosphide can supply long term low-level power with high reliability. Results are presented for GaP devices powered by Ni-63 and tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/cm(exp 2) have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. A small demonstration system has been assembled that generates and stores enough electricity to light up an LED.

  13. Sputtering of tin and gallium-tin clusters

    SciTech Connect

    Lill, T.; Calaway, W.F.; Ma, Z.; Pellin, M.J.

    1994-08-01

    Tin and gallium-tin clusters have been produced by 4 keV Ar{sup +} ion bombardment of polycrystalline tin and the gallium-tin eutectic alloy and analyzed by time-of-flight mass spectrometry. The sputtered neutral species were photoionized with 193 nm (6.4 eV) excimer laser light. Neutral tin clusters containing up to 10 atoms and mixed gallium-tin clusters Ga{sub (n-m)}Sn{sub m} with n {<=} 4 for the neutrals and N {<=} 3 for the sputtered ionic species have been detected. Laser power density dependent intensity measurements, relative yields, and kinetic energy distributions have been measured. The abundance distributions of the mixed clusters have been found to be nonstatistical due to significant differences in the ionization efficiencies for clusters with equal nuclearity but different number of tin atoms. The results indicate that Ga{sub 2}Sn and Ga{sub 3}Sn like the all-gallium clusters have ionization potentials below 6.4 eV. In the case of Sn{sub 5}, Sn{sub 6}, GaSn and Ga{sub (n-m)}Sn{sub m} clusters with n=2 to 4 and m>1, the authors detect species that have sufficient internal energy to be one photon ionized despite ionization potentials that are higher 6.4 eV. The tin atom signal that is detected can be attributed to photofragmentation of dimers for both sputtering from polycrystalline tin and from the gallium-tin eutectic alloy.

  14. Electrospun Gallium Nitride Nanofibers

    SciTech Connect

    Melendez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-04-19

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH{sub 3} flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  15. alloys

    NASA Astrophysics Data System (ADS)

    Pan, Z. B.; Liu, J. J.; Wang, R.; Liu, X. Y.; Wang, J.; Sun, N. K.; Si, P. Z.

    2014-06-01

    Structural, magnetic and magnetostrictive properties of Tb0.4Nd0.6(Fe0.8Co0.2) x (1.50 ? x ? 1.90) alloys have been investigated by means of X-ray diffraction (XRD), a vibrating sample magnetometer and a standard strain technique. XRD analysis shows the presence of single Laves phase with a cubic MgCu2-type structure for the high Nd content alloy around the composition of x = 1.80, which tends to be formed by curing at relatively low annealing temperature. The easy direction of magnetization at room temperature is observed toward <111> axis, accompanied by a rhombohedral distortion with a large spontaneous magnetostriction ?111. An optimized effect on the linear anisotropic magnetostriction, 360 ppm at 3 kOe, was observed for the high Nd content Tb0.4Nd0.6(Fe0.8Co0.2)1.80 alloy, which can be attributed to its single Laves phase, the large ?111 (~1,520 ppm) of the MgCu2-type (Tb,Nd)(Fe,Co)2 phase and the good soft magnetic behaviors.

  16. The interaction of gold with gallium arsenide

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1988-01-01

    Gold and gold-based alloys, commonly used as solar-cell contact materials, are known to react readily with gallium arsenide. Experiments designed to identify the mechanisms involved in these GaAs-metal interactions have yielded several interesting results. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are also explained by invoking this mechanism.

  17. Contact formation in gallium arsenide solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1988-01-01

    Gold and gold-based alloys, commonly used as solar cell contact materials, are known to react readily with gallium arsenide. Experiments were performed to identify the mechanisms involved in these GaAs-metal interactions. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are explained by invoking this mechanism.

  18. Gallium-positive tumor thrombus

    SciTech Connect

    Wenzel, D.J.

    1984-01-01

    A case is presented in which both a clear cell renal tumor and its accurate intravenous propagation were preoperatively depicted by combined information from tomographic gallium imaging and CT scanning.

  19. Gallium localization in dissecting aortic aneurysm

    SciTech Connect

    Haden, H.T.; Lippman, H.R.

    1988-08-01

    Gallium concentration was demonstrated in a dissecting aneurysm of the aortic arch, imaged approximately 2 weeks after dissection. Concentration of gallium was apparently due to the inflammatory reaction associated with the organizing intramural hematoma.

  20. Gallium phosphide energy converters

    SciTech Connect

    Sims, P.E.; Dinetta, L.C.; Goetz, M.A.

    1995-10-01

    Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp {minus}17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

  1. Gallium phosphide energy converters

    NASA Astrophysics Data System (ADS)

    Sims, P. E.; Dinetta, L. C.; Goetz, M. A.

    1995-10-01

    Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

  2. Gallium phosphide energy converters

    NASA Technical Reports Server (NTRS)

    Sims, P. E.; Dinetta, L. C.; Goetz, M. A.

    1995-01-01

    Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

  3. Effect of oxidation on the mechanical properties of liquid gallium and eutectic gallium-indium

    NASA Astrophysics Data System (ADS)

    Xu, Qin; Oudalov, Nikolai; Guo, Qiti; Jaeger, Heinrich M.; Brown, Eric

    2012-06-01

    Liquid metals exhibit remarkable mechanical properties, in particular large surface tension and low viscosity. However, these properties are greatly affected by oxidation when exposed to air. We measure the viscosity, surface tension, and contact angle of gallium and a eutectic gallium-indium alloy while controlling such oxidation by surrounding the metals with an acid bath of variable concentration. Rheometry measurements reveal a yield stress directly attributable to an oxide skin that obscures the intrinsic behavior of the liquid metals. We demonstrate how the intrinsic viscosity can be obtained with precision through a scaling technique that collapses low- and high-Reynolds number data. Measuring surface tension with a pendant drop method, we show that the oxide skin generates a surface stress that mimics surface tension and develop a simple model to relate this to the yield stress obtained from rheometry. We find that yield stress, surface tension, and contact angle all transition from solid-like to liquid behavior at the same critical acid concentration, thereby quantitatively confirming that the wettability of these liquid metals is due to the oxide skin.

  4. Medical Applications and Toxicities of Gallium Compounds

    PubMed Central

    Chitambar, Christopher R.

    2010-01-01

    Over the past two to three decades, gallium compounds have gained importance in the fields of medicine and electronics. In clinical medicine, radioactive gallium and stable gallium nitrate are used as diagnostic and therapeutic agents in cancer and disorders of calcium and bone metabolism. In addition, gallium compounds have displayed anti-inflammatory and immunosuppressive activity in animal models of human disease while more recent studies have shown that gallium compounds may function as antimicrobial agents against certain pathogens. In a totally different realm, the chemical properties of gallium arsenide have led to its use in the semiconductor industry. Gallium compounds, whether used medically or in the electronics field, have toxicities. Patients receiving gallium nitrate for the treatment of various diseases may benefit from such therapy, but knowledge of the therapeutic index of this drug is necessary to avoid clinical toxicities. Animals exposed to gallium arsenide display toxicities in certain organ systems suggesting that environmental risks may exist for individuals exposed to this compound in the workplace. Although the arsenic moiety of gallium arsenide appears to be mainly responsible for its pulmonary toxicity, gallium may contribute to some of the detrimental effects in other organs. The use of older and newer gallium compounds in clinical medicine may be advanced by a better understanding of their mechanisms of action, drug resistance, pharmacology, and side-effects. This review will discuss the medical applications of gallium and its mechanisms of action, the newer gallium compounds and future directions for development, and the toxicities of gallium compounds in current use. PMID:20623028

  5. Mineral resource of the month: gallium

    USGS Publications Warehouse

    Jaskula, Brian

    2009-01-01

    The metal element gallium occurs in very small concentrations in rocks and ores of other metals native gallium is not known. As society gets more and more high-tech, gallium becomes more useful. Gallium is one of only five metals that are liquid at or close to room temperature. It has one of the longest liquid ranges of any metal (29.8 degrees Celsius to 2204 degrees Celsius) and has a low vapor pressure even at high temperatures. Ultra-pure gallium has a brilliant silvery appearance, and the solid metal exhibits conchoidal fracture similar to glass.

  6. Examples of liquiq metal embrittlement in industrial aluminium alloys

    NASA Astrophysics Data System (ADS)

    Bréchet, Y.; Rodine, A.; Véron, M.; Péron, S.; Deschamps, A.

    2002-09-01

    Liquid metal embrittlement (LME) phenomena were investigated in two industrial aluminium alloys. Gallium penetration in 7010 alloys was systematically investigated to shed light on the effect of microstructure and plasticity ahead of the crack tip. Hot temperature shortness in 5083 alloy is given as an example of cleavage induced by LME.

  7. Renal amyloidosis. Evaluation by gallium imaging

    SciTech Connect

    Lee, V.W.; Skinner, M.; Cohen, A.S.; Ngai, S.; Peng, T.T.

    1986-09-01

    A study has been performed to evaluate the efficacy of gallium imaging in the detection of renal amyloidosis. Ten of the 11 patients who had biopsy-proven renal amyloidosis demonstrated marked uptake in both kidneys. One patient revealed moderate gallium uptake in his kidneys. None of the patients had underlying renal or extrarenal pathology other than amyloidosis, which could account for renal gallium uptake (renal infection, neoplasm, hepatic failure or frequent blood transfusions). Four patients also had extrarenal foci of abnormal gallium uptake, suggesting other sites of amyloid deposits. Our data strongly suggest that gallium imaging has a high sensitivity for detection of renal amyloidosis. Its specificity is enhanced significantly by careful review of the clinical history to exclude other known causes of renal gallium uptake. Potentially, gallium imaging may be used to monitor the progress of patients under experimental therapy.

  8. Potential effects of gallium on cladding materials

    SciTech Connect

    Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

    1997-10-01

    This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented.

  9. Liquid gallium rotary electric contract

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J. S.

    1969-01-01

    Due to its low vapor pressure, gallium, when substituted for mercury in a liquid slip ring system, transmits substantial amounts of electrical current to rotating components in an ultrahigh vacuum. It features low electrical loss, little or no wear, and long maintenance-free life.

  10. P-type gallium nitride

    DOEpatents

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  11. P-type gallium nitride

    DOEpatents

    Rubin, Michael (Berkeley, CA); Newman, Nathan (Montara, CA); Fu, Tracy (Berkeley, CA); Ross, Jennifer (Pleasanton, CA); Chan, James (Berkeley, CA)

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  12. Gallium scan in intracerebral sarcoidosis

    SciTech Connect

    Makhija, M.C.; Anayiotos, C.P.

    1981-07-01

    Sarcoidosis involving the nervous system probably occurs in about 4% of patients. The usefulness of brain scintigraphy in these cases has been suggested. In this case of cerebral sarcoid granuloma, gallium imaging demonstrated the lesion before treatment and showed disappearance of the lesion after corticosteroid treatment, which correlated with the patient's clinical improvement.

  13. Atomic scale characterization of threading dislocations in gallium nitride

    NASA Astrophysics Data System (ADS)

    Arslan, Ilke

    Gallium nitride is a semiconducting material that emits light in the blue/green region of the visible spectrum. The development of optoelectronic devices that utilize this part of the spectrum will revolutionize many aspects of the lighting industry by providing efficient, long-lasting sources of light. Furthermore, by alloying gallium nitride with other elements such as indium and aluminum and creating emission across the whole visible spectrum, it is even possible to create white light sources. Although devices utilizing the alloys of gallium nitride are already being fabricated, there are still major issues concerning the materials performance that have yet to be fully understood---issues that are limiting the full realization of the technology. In particular, perhaps the most intriguing issue from a fundamental materials physics perspective, is that devices are known to function despite a density of threading dislocations that is high enough to inhibit emission in other similarly structured semiconducting materials. The aim of this Ph.D. dissertation is to explore the atomic scale origins of the intriguing properties of dislocations in gallium nitride. The analysis of the three types of threading dislocations present in the active layers of gallium nitride based devices, edge, screw and mixed, has been performed utilizing state-of-the-art imaging and analytical techniques in the scanning transmission electron microscope. This dissertation discusses the structural properties of all the cores determined using the incoherent Z-contrast imaging method and includes the first experimental determination of the core structure of mixed dislocations (including the case where it dissociates into partials). The composition of the cores and their electronic properties has been determined experimentally using electron energy loss spectroscopy, which has provided the first direct evidence that the electronic properties of dislocation cores can be controlled by the presence of oxygen impurities. The interpretation of the electronic structure changes observed at the cores has been supported by detailed simulations using both the multiple scattering methodology and ab-initio density functional theory. The correlation between these computational methods and the atomic scale experimental analysis is explored with reference to the development of new levels of resolution in aberration corrected and monochromated electron microscopes.

  14. Gallium nitride electronics

    NASA Astrophysics Data System (ADS)

    Rajan, Siddharth; Jena, Debdeep

    2013-07-01

    In the past two decades, there has been increasing research and industrial activity in the area of gallium nitride (GaN) electronics, stimulated first by the successful demonstration of GaN LEDs. While the promise of wide band gap semiconductors for power electronics was recognized many years before this by one of the contributors to this issue (J Baliga), the success in the area of LEDs acted as a catalyst. It set the field of GaN electronics in motion, and today the technology is improving the performance of several applications including RF cell phone base stations and military radar. GaN could also play a very important role in reducing worldwide energy consumption by enabling high efficiency compact power converters operating at high voltages and lower frequencies. While GaN electronics is a rapidly evolving area with active research worldwide, this special issue provides an opportunity to capture some of the great advances that have been made in the last 15 years. The issue begins with a section on epitaxy and processing, followed by an overview of high-frequency HEMTs, which have been the most commercially successful application of III-nitride electronics to date. This is followed by review and research articles on power-switching transistors, which are currently of great interest to the III-nitride community. A section of this issue is devoted to the reliability of III-nitride devices, an area that is of increasing significance as the research focus has moved from not just high performance but also production-worthiness and long-term usage of these devices. Finally, a group of papers on new and relatively less studied ideas for III-nitride electronics, such as interband tunneling, heterojunction bipolar transistors, and high-temperature electronics is included. These areas point to new areas of research and technological innovation going beyond the state of the art into the future. We hope that the breadth and quality of articles in this issue will make it an excellent reference for newcomers and experienced researchers in this field for several years. We thank Alice Malhador at IOP Publishing for her constant encouragement and guidance in putting together this special issue on GaN electronics.

  15. Effect of Gallium Focused Ion Beam Milling on Preparation of Aluminum Thin Foils

    SciTech Connect

    Unocic, Kinga A; Mills, Michael J.; Daehn, Glenn

    2010-01-01

    Focus Ion Beam (FIB) milling has greatly extended the utility of atom probe and TEM because it enables sample preparation with a level of dimensional control never before possible. Using FIB it is possible to extract the samples from desired and very specific locations. The artifacts associated with this sample preparation method must also be fully understood. In this work issues specifically relevant to the FIB milling of aluminum alloys are presented. After using the FIB as a sample preparation technique it is evident that gallium will concentrate in three areas of the sample: on the surface, on grain boundaries and at interphase boundaries. This work also shows that low energy Ar ion nanomilling is potentially quite effective for removing gallium implantation layers and gallium from the internal surfaces of aluminum thin foils.

  16. Lewis-Acid/Base Effects on Gallium Volatility in Molten Chlorides

    SciTech Connect

    Williams, D.F.

    2001-02-26

    It has been proposed that GaCl{sub 3} can be removed by direct volatilization from a Pu-Ga alloy that is dissolved in a molten chloride salt. Although pure GaCl{sub 3} is quite volatile (boiling point, 201 C), the behavior of GaCl{sub 3} dissolved in chloride salts is different due to solution effects and is critically dependent on the composition of the solvent salt (i.e., its Lewis-acid/base character). In this report, the behavior of gallium in prototypical Lewis-acid and Lewis-base salts is compared. It was found that gallium volatility is suppressed in basic melts and enhanced in acidic melts. The implications of these results on the potential for simple gallium removal in molten salt systems are significant.

  17. A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials

    NASA Technical Reports Server (NTRS)

    Hurley, John S.

    1990-01-01

    Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.

  18. Epitaxial Deposition Of Germanium Doped With Gallium

    NASA Technical Reports Server (NTRS)

    Huffman, James E.

    1994-01-01

    Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

  19. Collector for recovering gallium from weapons plutonium

    SciTech Connect

    Philip, C.V.; Anthony, R.G.; Chokkaram, S.

    1998-09-01

    Currently, the separation of gallium from weapons plutonium involves the use of aqueous processing using either solvent extraction of ion exchange. However, this process generates significant quantities of liquid radioactive wastes. A Thermally Induced Gallium Removal process, or TIGR, developed by researchers at Los Alamos National Laboratories, is a simpler alternative to aqueous processing. This research examined this process, and the behavior of gallium suboxide, a vapor that is swept away by passing hydrogen/argon over gallium trioxide/plutonium oxide heated at 1100 C during the TIGR process. Through experimental procedures, efforts were made to prevent the deposition of corrosive gallium onto furnace and vent surfaces. Experimental procedures included three options for gallium removal and collection: (1) collection of gallium suboxide through use of a cold finger; (2) collection by in situ air oxidation; and (3) collection of gallium on copper. Results conclude all three collection mechanisms are feasible. In addition, gallium trioxide exists in three crystalline forms, and each form was encountered during each experiment, and that each form will have a different reactivity.

  20. Gallium toxicity and adaptation in Pseudomonas fluorescens.

    PubMed

    al-Aoukaty, A; Appanna, V D; Falter, H

    1992-05-01

    When cultured in a defined citrate medium supplemented with 1 mM gallium (III) Pseudomonas fluorescens ATCC 13525 experienced a lag phase of 40 h with no apparent diminution in cellular yield. Following initial uptake of the metal-ligand complex, gallium was secreted in the spent fluid. This lag phase was abolished either by inoculating the medium with gallium adapted cells or by inclusion of iron (III) (20 microM) in the growth medium. In the culture enriched with both gallium and iron (III), X-ray fluorescence spectra revealed a gradual decrease of gallium from the spent fluid as growth progressed. In a phosphate deficient medium, no cellular multiplication was observed in the presence of gallium. The inhibitory influence mediated by the trivalent metal was reversed by the addition of (20 microM) iron (III). Although bacterial growth was accompanied by an initial decrease in exocellular gallium, a marked increment in the concentration of this metal was observed in the spent fluid at stationary phase of growth. Citrate was not detected in the exocellular fluid at cessation of bacterial multiplication. Electrophoretic analyses revealed numerous variations in the cytoplasmic protein profiles of the control and metal stressed cells. Gallium induced the syntheses of polypeptides with apparent molecular masses of 89 kDa, 50 kDa, 39 kDa, 26 kDa and 12 kDa. PMID:1624126

  1. Gallium 67 uptake in thymic rebound

    SciTech Connect

    Hurst, R.; Sabio, H.; Teates, C.D.

    1988-09-01

    We have reported a case of localized thymic enlargement and uptake of gallium 67 in a child who had received antineoplastic chemotherapy. The enlarged thymus showed normal histology, a picture consistent with thymic rebound after nonspecific stress. This case further demonstrates the need to consider thymic rebound as a cause of gallium 67 uptake in children with neoplastic diseases.

  2. Gallium 67 uptake in thymic rebound.

    PubMed

    Hurst, R; Sabio, H; Teates, C D

    1988-09-01

    We have reported a case of localized thymic enlargement and uptake of gallium 67 in a child who had received antineoplastic chemotherapy. The enlarged thymus showed normal histology, a picture consistent with thymic rebound after nonspecific stress. This case further demonstrates the need to consider thymic rebound as a cause of gallium 67 uptake in children with neoplastic diseases. PMID:3420448

  3. Gallium Electromagnetic (GEM) Thrustor Concept and Design

    NASA Technical Reports Server (NTRS)

    Polzin, Kurt A.; Markusic, Thomas E.

    2006-01-01

    We describe the design of a new type of two-stage pulsed electromagnetic accelerator, the gallium electromagnetic (GEM) thruster. A schematic illustration of the GEM thruster concept is given in Fig. 1. In this concept, liquid gallium propellant is pumped into the first stage through a porous metal electrode using an electromagneticpump[l]. At a designated time, a pulsed discharge (approx.10-50 J) is initiated in the first stage, ablating the liquid gallium from the porous electrode surface and ejecting a dense thermal gallium plasma into the second state. The presence of the gallium plasma in the second stage serves to trigger the high-energy (approx.500 I), send-stage puke which provides the primary electromagnetic (j x B) acceleration.

  4. Electrospun Gallium Nitride Nanofibers (abstract)

    NASA Astrophysics Data System (ADS)

    Meléndez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-04-01

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH3 flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  5. Clinical Applications of Gallium-68

    PubMed Central

    Banerjee, Sangeeta Ray; Pomper, Martin G.

    2013-01-01

    Gallium-68 is a positron-emitting radioisotope that is produced from a 68Ge/68Ga generator. As such it is conveniently used, decoupling radiopharmacies from the need for a cyclotron on site. Gallium-68-labeled peptides have been recognized as a new class of radiopharmaceuticals showing fast target localization and blood clearance. 68Ga-DOTATOC, 8Ga-DOTATATE, 68Ga-DOTANOC, are the most prominent radiopharmaceuticals currently in use for imaging and differentiating lesions of various somatostatin receptor subtypes, overexpressed in many neuroendocrine tumors. There has been a tremendous increase in the number of clinical studies with 68Ga over the past few years around the world, including within the United States. An estimated ~10,000 scans are being performed yearly in Europe at about 100 centers utilizing 68Ga-labeled somatostatin analogs within clinical trials. Two academic sites within the US have also begun to undertake human studies. This review will focus on the clinical experience of selected, well-established and recently applied 68Ga-labeled imaging agents used in nuclear medicine. PMID:23522791

  6. Status of gallium-67 in tumor detector

    SciTech Connect

    Hoffer, P.

    1980-04-01

    The efficacy of gallium-67 citrate in detecting specific tumors is discussed. Tumors in which gallium-67 imaging is useful as a diagnostic tool include Hodgkin's disease, histiocystic lymphoma, Burkitt's lymphoma, hepatoma melanoma, and leukemia. It has not been found to be effective in diagnosing head and neck tumors, gastrointestinal tumors, genitourinary tract tumors, breast tumors, and pediatric tumors. Gallium may be useful in the evaluation of non-Hodgkin's lymphoma, testicular carcinoma, mesothelioma, and carcinoma of the lung. It may also be useful for determining response to treatment and prognosis in some neoplasms.

  7. The surface tension of liquid gallium

    NASA Technical Reports Server (NTRS)

    Hardy, S. C.

    1985-01-01

    The surface tension of liquid gallium has been measured using the sessile drop technique in an Auger spectrometer. The experimental method is described. The surface tension in mJ/sq m is found to decrease linearly with increasing temperature and may be represented as 708-0.66(T-29.8), where T is the temperature in centigrade. This result is of interest because gallium has been suggested as a model fluid for Marangoni flow experiments. In addition, the surface tension is of technological significance in the processing of compound semiconductors involving gallium.

  8. In vitro bio-functionality of gallium nitride sensors for radiation biophysics

    SciTech Connect

    Hofstetter, Markus; Howgate, John; Schmid, Martin; Schoell, Sebastian; Sachsenhauser, Matthias; Adiguezel, Denis; Stutzmann, Martin; Sharp, Ian D.; Thalhammer, Stefan

    2012-07-27

    Highlights: Black-Right-Pointing-Pointer Gallium nitride based sensors show promising characteristics to monitor cellular parameters. Black-Right-Pointing-Pointer Cell growth experiments reveal excellent biocompatibiltiy of the host GaN material. Black-Right-Pointing-Pointer We present a biofunctionality assay using ionizing radiation. Black-Right-Pointing-Pointer DNA repair is utilized to evaluate material induced alterations in the cellular behavior. Black-Right-Pointing-Pointer GaN shows no bio-functional influence on the cellular environment. -- Abstract: There is an increasing interest in the integration of hybrid bio-semiconductor systems for the non-invasive evaluation of physiological parameters. High quality gallium nitride and its alloys show promising characteristics to monitor cellular parameters. Nevertheless, such applications not only request appropriate sensing capabilities but also the biocompatibility and especially the biofunctionality of materials. Here we show extensive biocompatibility studies of gallium nitride and, for the first time, a biofunctionality assay using ionizing radiation. Analytical sensor devices are used in medical settings, as well as for cell- and tissue engineering. Within these fields, semiconductor devices have increasingly been applied for online biosensing on a cellular and tissue level. Integration of advanced materials such as gallium nitride into these systems has the potential to increase the range of applicability for a multitude of test devices and greatly enhance sensitivity and functionality. However, for such applications it is necessary to optimize cell-surface interactions and to verify the biocompatibility of the semiconductor. In this work, we present studies of mouse fibroblast cell activity grown on gallium nitride surfaces after applying external noxa. Cell-semiconductor hybrids were irradiated with X-rays at air kerma doses up to 250 mGy and the DNA repair dynamics, cell proliferation, and cell growth dynamics of adherent cells were compared to control samples. The impact of ionizing radiation on DNA, along with the associated cellular repair mechanisms, is well characterized and serves as a reference tool for evaluation of substrate effects. The results indicate that gallium nitride does not require specific surface treatments to ensure biocompatibility and suggest that cell signaling is not affected by micro-environmental alterations arising from gallium nitride-cell interactions. The observation that gallium nitride provides no bio-functional influence on the cellular environment confirms that this material is well suited for future biosensing applications without the need for additional chemical surface modification.

  9. Survey of the market, supply, and availability of gallium

    SciTech Connect

    Rosi, F.D.

    1980-01-01

    The present and potential availability of gallium metal in connection with materials evaluation recommendations for satellite power systems is examined in the following areas: (1) market considerations - the present and emerging uses of gallium, as well as the consumption and price of gallium; (2) supply considerations - present sources of gallium, commercial and new methods for extracting gallium from bauxite, and summary comments; (3) methods for purifying gallium to satisfy market demands; (4) principal suppliers of gallium; and (5) gallium availability from bauxite on the basis of primary aluminum production; and bauxite production, reserves and resources. The study was based on published information as well as information derived from private communications with both major and potential suppliers and users of gallium, and with staff members at the Bureau of Mines. 16 references, 3 figures, 6 tables.

  10. Gallium-67 activity in bronchoalveolar lavage fluid in sarcoidosis

    SciTech Connect

    Trauth, H.A.; Heimes, K.; Schubotz, R.; von Wichert, P.

    1986-01-01

    Roentgenograms and gallium-67 scans and gallium-67 counts of BAL fluid samples, together with differential cell counts, have proved to be useful in assessing activity and lung involvement in sarcoidosis. In active pulmonary sarcoidosis gallium-67 scans are usually positive. Quantitation of gallium-67 uptake in lung scans, however, may be difficult. Because gallium-67 uptake and cell counts in BAL fluid may be correlated, we set out to investigate gallium-67 activity in BAL fluid recovered from patient of different groups. Sixteen patients with recently diagnosed and untreated sarcoidosis, nine patients with healthy lungs, and five patients with CFA were studied. Gallium-67 uptake of the lung, gallium-67 activity in the lavage fluid, SACE and LACE levels, and alpha 1-AT activity were measured. Significantly more gallium-67 activity was found in BAL fluid from sarcoidosis patients than in that from CFA patients (alpha = .001) or patients with healthy lungs (alpha = .001). Gallium-67 activity in BAL fluid could be well correlated with the number of lymphocytes in BAL fluid, but poorly with the number of macrophages. Subjects with increased levels of SACE or serum alpha 1-AT showed higher lavage gallium-67 activity than did normals, but no correlation could be established. High gallium-67 activity in lavage fluid may be correlated with acute sarcoidosis or physiological deterioration; low activity denotes change for the better. The results show that gallium-67 counts in BAL fluid reflects the intensity of gallium-67 uptake and thus of activity of pulmonary sarcoidosis.

  11. Oxidation of gallium sulfides by Thiobacillus ferrooxidans.

    PubMed

    Torma, A E

    1978-07-01

    The bacterial oxidation of naturally occurring gallium-bearing chalcopyrite concentrate and a pure synthetic gallium (III) sulfide has been investigated at pH 1.8 and 35 degree C, using an active culture of Thiobacillus ferrooxidans. This oxidation process may proceed by direct or by indirect bacterial action. The highest dissolved gallium and copper concentrations were about 2.2 and 40.2 g/l, respectively. The order of the specific rate of oxygen uptake by T. ferrooxidans in approximately CuFES2 greater than or equal to gallium-bearing CuFeS2 greater than FeS2 greater than Cu2S greater than Cu2S greater than Ga2S3. PMID:28175

  12. Radiochemical separation of gallium by amalgam exchange

    USGS Publications Warehouse

    Ruch, R.R.

    1969-01-01

    An amalgam-exchange separation of radioactive gallium from a number of interfering radioisotopes has been developed. A dilute (ca. 0.3%) gallium amalgam is agitated with a slightly acidic solution of 72Ga3+ containing concentrations of sodium thiocyanate and either perchlorate or chloride. The amalgam is then removed and the radioactive gallium stripped by agitation with dilute nitric acid. The combined exchange yield of the perchlorate-thiocyanate system is 90??4% and that of the chloride-thiocyanate system is 75??4%. Decontamination yields of most of the 11 interfering isotopes studied were less than 0.02%. The technique is applicable for use with activation analysis for the determination of trace amounts of gallium. ?? 1969.

  13. Recovery of gallium from aluminum industry residues

    SciTech Connect

    Carvalho, M.S.; Neto, K.C.M.; Nobrega, A.W.; Medeiros, J.A.

    2000-01-01

    A procedure is proposed to recover gallium from flue dust aluminum residues produced in plants by using solid-phase extraction with a commercial polyether-type polyurethane foam (PUF). Gallium can be separated from high concentrations of aluminum, iron, nickel, titanium, vanadium, copper, zinc, sulfate, fluoride, and chloride by extraction with PUF from 3 M sulfuric acid and 3 M sodium chloride concentration medium with at least a 92% efficiency. Gallium backextraction was fast and quantitative with ethanol solution. In all recovery steps commercial-grade reagents could be used, including tap water. The recovered gallium was precipitated with sodium hydroxide solution, purified by dissolution and precipitation, calcinated, and the final oxide was 98.6% pure.

  14. Development of gallium arsenide solar cells

    NASA Technical Reports Server (NTRS)

    1973-01-01

    The potential of ion implantation as a means of developing gallium arsenide solar cells with high efficiency performance was investigated. Computer calculations on gallium arsenide cell characteristics are presented to show the effects of surface recombination, junction space-charge recombination, and built-in fields produced by nonuniform doping of the surface region. The fabrication technology is summarized. Electrical and optical measurements on samples of solar cells are included.

  15. Generator for gallium-68 and compositions obtained therefrom

    DOEpatents

    Neirinckx, Rudi D. (Medfield, MA); Davis, Michael A. (Westwood, MA)

    1981-01-01

    A generator for obtaining radioactive gallium-68 from germanium-68 bound in a resin containing unsubstituted phenolic hydroxyl groups. The germanium-68 is loaded into the resin from an aqueous solution of the germanium-68. A physiologically acceptable solution of gallium-68 having an activity of 0.1 to 50 millicuries per milliliter of gallium-68 solution is obtained. The solution is obtained from the bound germanium-68 which forms gallium-68 in situ by eluting the column with a hydrochloric acid solution to form an acidic solution of gallium-68. The acidic solution of gallium-68 can be neutralized.

  16. The solubility of hydrogen and deuterium in alloyed, unalloyed and impure plutonium metal

    SciTech Connect

    Richmond, Scott; Bridgewater, Jon S; Ward, John W; Allen, Thomas A

    2009-01-01

    Pressure-Composition-Temperature (PCT) data are presented for the plutonium-hydrogen (Pu-H) and plutonium-deuterium (Pu-D) systems in the solubility region up to terminal solubility (precipitation of PuH{sub 2}). The heats of solution for PuH{sub s} and PuD{sub s} are determined from PCT data in the ranges 350-625 C for gallium alloyed Pu and 400-575 C for unalloyed Pu. The solubility of high purity plutonium alloyed with 2 at.% gallium is compared to high purity unalloyed plutonium. Significant differences are found in hydrogen solubility for unalloyed Pu versus gallium alloyed Pu. Differences in hydrogen solubility due to an apparent phase change are observable in the alloyed and unalloyed solubilities. The effect of iron impurities on Pu-Ga alloyed Pu is shown via hydrogen solubility data as preventing complete homogenization.

  17. Controlled Electrochemical Deformation of Liquid-Phase Gallium.

    PubMed

    Chrimes, Adam F; Berean, Kyle J; Mitchell, Arnan; Rosengarten, Gary; Kalantar-Zadeh, Kourosh

    2016-02-17

    Pure gallium is a soft metal with a low temperature melting point of 29.8 C. This low melting temperature can potentially be employed for creating optical components with changeable configurations on demand by manipulating gallium in its liquid state. Gallium is a smooth and highly reflective metal that can be readily maneuvered using electric fields. These features allow gallium to be used as a reconfigurable optical reflector. This work demonstrates the use of gallium for creating reconfigurable optical reflectors manipulated through the use of electric fields when gallium is in a liquid state. The use of gallium allows the formed structures to be frozen and preserved as long as the temperature of the metal remains below its melting temperature. The lens can be readily reshaped by raising the temperature above the melting point and reapplying an electric field to produce a different curvature of the gallium reflector. PMID:26820807

  18. Window structure for passivating solar cells based on gallium arsenide

    NASA Technical Reports Server (NTRS)

    Barnett, Allen M. (Inventor)

    1985-01-01

    Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

  19. Gallium-67 scanning for malignant melanoma

    SciTech Connect

    Kagan, R.; Witt, T.; Bines, S.; Mesleh, G.; Economou, S.

    1988-01-15

    Melanoma is characterized by a tendency to metastasize widely throughout the body and its relative affinity for gallium-67. Because of the ability of this nuclide to image tumor sites in numerous organ systems, it has been used to detect metastases in patients with malignant melanoma. The effectiveness of this technique, however, has been controversial. This article documents the retrospective analysis of results from 296 gallium-67 scintiscans from 222 patients with melanoma. Patients were placed in two groups. The low suspicion group (148 patients undergoing 191 scans) consisted of patients with no evidence of disease; the gallium scans were performed solely for screening purposes. There were 175 true-negative scans, nine true-positive scans (eight of the nine were positive only at the untreated primary site), three false-negative scans, and four false-positive scans. Therefore, in only one patient (0.5%) did a screening gallium scan reveal disease that was not expected. The high suspicion group (85 patients undergoing 105 scans) consisted of patients with established evidence of metastatic disease; the gallium scan was performed to confirm those findings and to search for involvement of other organ systems. Of these scans, ten were true-negative, 73 true-positive, 21 false-negative, and one false-positive. In this group the 20% false-negative results indicate that gallium scanning is considerably less sensitive than the combination of clinical and standard radiographic assessment. It was concluded that gallium-67 scintiscanning of patients with melanoma, whether for screening or evaluation of patients with known metastases, provides little information that affects clinical staging or therapeutic design. Therefore, the technique is of limited value for routinely investigating the extent of disease.

  20. Speciation of scandium and gallium in soil.

    PubMed

    Połedniok, Justyna

    2008-09-01

    A method for the speciation of scandium and gallium in soil has been developed. The sequential extraction scheme of Tessier et al. for heavy metals was examined for the scandium and gallium separation. The regents proposed by Tessier were used for the extraction, and only for the residual fraction the HClO4 was replaced with H2SO4. The optimum conditions for leaching scandium and gallium from the soil were chosen for each fraction. Very sensitive, spectrophotometric methods based on the mixed complexes of Sc(III) and Ga(III) with Chrome Azurol S and benzyldodecyldimethylammonium bromide were applied for the scandium and gallium determination after their separation by solvent extraction. 100% mesityl oxide and a 0.5M solution of 2-thenoyltrifluoroacetone in xylene were chosen for the extraction of scandium and butyl acetate was selected for gallium. Soil samples from two different regions of Poland were the object of this research. The content of scandium and gallium found in the individual fractions of Upper Silesia soil (industrial region) was [in microgg(-1)] Sc: I, 1.52; II, 0.53; III, 7.78; IV, 1.79; V, 0.20; Ga: I, 24.7; III, 29.2; IV, 35.4; V, 6.9. In Podlasie soil (agricultural region), the content of both elements was clearly lower. The total content of scandium and gallium in the five soil fractions was in good correlation with the total content of these elements in the soils found after HF-H2SO4 digestion. Analysis using the ICP-OES method gave comparable results. PMID:18653213

  1. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  2. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  3. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  4. Gallium Zeolites for Light Paraffin Aromatization

    SciTech Connect

    Price, G.L.; Dooley, K.M.

    1999-02-10

    The primary original goal of this project was to investigate the active state of gallium-containing MFI catalysts for light paraffin aromatization, in particular the state of gallium in the active material. Our original hypothesis was that the most active and selective materials were those which contained gallium zeolitic cations, and that previously reported conditions for the activation of gallium-containing catalysts served to create these active centers. We believed that in high silica materials such as MFI, ion-exchange is most effectively accomplished with metals in their 1+ oxidation state, both because of the sparsity of the anionic ion-exchange sites associated with the zeolite, and because the large hydration shells associated with aqueous 3+ cations hinder transport. Metals such as Ga which commonly exist in higher oxidation states need to be reduced to promote ion-exchange and this is the reason that reduction of gallium-containing catalysts for light paraffin aromatization often yields a dramatic enhancement in catalytic activity. We have effectively combined reduction with ion-exchange and we term this combined process ''reductive solid-state ion-exchange''. Our hypothesis has largely been proven true, and a number of the papers we have published directly address this hypothesis.

  5. /sup 67/Gallium lung scans in progressive systemic sclerosis

    SciTech Connect

    Baron, M.; Feiglin, D.; Hyland, R.; Urowitz, M.B.; Shiff, B.

    1983-08-01

    /sup 67/Gallium lung scans were performed in 19 patients with progressive systemic sclerosis (scleroderma). Results were expressed quantitatively as the /sup 67/Gallium Uptake Index. The mean total pulmonary /sup 67/Gallium Uptake Index in patients was significantly higher than that in controls (41 versus 25), and 4 patients (21%) fell outside the normal range. There were no clinical or laboratory variables that correlated with the /sup 56/Gallium uptake. Increased pulmonary /sup 67/Gallium uptake in scleroderma may prove useful as an index of pulmonary disease activity.

  6. Gallium nitride-based micro-opto-electro-mechanical systems

    NASA Astrophysics Data System (ADS)

    Stonas, Andreas Robert

    Gallium Nitride and its associated alloys InGaN and AlGaN have many material properties that are highly desirable for micro-electro-mechanical systems (MEMS), and more specifically micro-opto-electro-mechanical systems (MOEMS). The group III-nitrides are tough, stiff, optically transparent, direct bandgap, chemically inert, highly piezoelectric, and capable of functioning at high temperatures. There is currently no other semiconductor system that possesses all of these properties. Taken together, these attributes make the nitrides prime candidates not only for creating new versions of existing device structures, but also for creating entirely unique devices which combine these properties in novel ways. Unfortunately, their chemical resiliency also makes the group III-nitrides extraordinarily difficult to shape into devices. In particular, until this research, no undercut etch technology existed that could controllably separate a selected part of a MEMS device from its sapphire or silicon carbide substrate. This has effectively prevented GaN-based MEMS from being developed. This dissertation describes how this fabrication obstacle was overcome by a novel etching geometry (bandgap-selective backside-illuminated photoelectochemical (BS-BIPEC) etching) and its resulting morphologies. Several gallium-nitride based MEMS devices were created, actuated, and modelled, including cantilevers and membranes. We describe in particular our pursuit of one of the many novel device elements that is possible only in this material system: a transducer that uses an externally applied strain to dynamically change the optical transition energy of a quantum well. While the device objective of a dynamically tunable quantum well was not achieved, we have demonstrated sufficient progress to believe that such a device will be possible soon. We have observed a shift (5.5meV) of quantum well transition energies in released structures, and we have created structures that can apply large biaxial stresses, which are required to produce significantly larger tuning (up to several hundred meV) in quantum well-based devices.

  7. Gallium imaging in cancer of the esophagus

    SciTech Connect

    Pearlman, A.W.

    1981-08-01

    Ga-67-citrate scintigraphy was used in 17 patients with carcinoma of the esophagus as part of the preoperative evaluation. Intense concentration in the primary site was associated with an extensive tumor. In all patients but one in whom resection was attempted, the tumors were found to be unresectable. Gallium scintigraphy diaphragm and in the left supraclavicular fossa. Of special interest were three patients in whom esophagoscopy and contrast radiography suggested a benign stricture. All had intense concentration of gallium at the esophagogastric junction, an indication that proved to be carcinoma.

  8. Radiation damage of gallium arsenide production cells

    NASA Technical Reports Server (NTRS)

    Mardesich, N.; Joslin, D.; Garlick, J.; Lillington, D.; Gillanders, M.; Cavicchi, B.; Scott-Monck, J.; Kachare, R.; Anspaugh, B.

    1987-01-01

    High efficiency liquid phase epitaxy (LPE) gallium arsenide cells were irradiated with 1 Mev electrons up to fluences of 1 times 10 to the 16th power cm-2. Measurements of spectral response and dark and illuminated I-V data were made at each fluence and then, using computer codes, the experimental data was fitted to gallium arsenide cell models. In this way it was possible to determine the extent of the damage, and hence damage coefficients in both the emitter and base of the cell.

  9. The influence of Ga additions on electric and magnetic properties of Co47Fe21B21Si5Nb6 alloy in crystal and liquid states

    NASA Astrophysics Data System (ADS)

    Sidorov, V.; Rojkov, I.; Mikhailov, V.; Svec, P.; Janickovic, D.

    2015-08-01

    The influence of small additions of gallium on electric resistivity and magnetic susceptibility of the bulk glass forming Co47Fe20.9B21.2Si4.6Nb6.3 alloy was studied in a wide temperature range up to 1830 K. Gallium atoms were found to increase resistivity but decrease susceptibility of the alloy. The suppositions about clusters surrounding Ga atoms in the melt and new GFA criterion are given

  10. Synchrotron X-Ray Fluorescence Microscopy of Gallium in Bladder Tissue following Gallium Maltolate Administration during Urinary Tract Infection

    PubMed Central

    Sampieri, Francesca; Chirino, Manuel; Hamilton, Don L.; Blyth, Robert I. R.; Sham, Tsun-Kong; Dowling, Patricia M.; Thompson, Julie

    2013-01-01

    A mouse model of cystitis caused by uropathogenic Escherichia coli was used to study the distribution of gallium in bladder tissue following oral administration of gallium maltolate during urinary tract infection. The median concentration of gallium in homogenized bladder tissue from infected mice was 1.93 μg/g after daily administration of gallium maltolate for 5 days. Synchrotron X-ray fluorescence imaging and X-ray absorption spectroscopy of bladder sections confirmed that gallium arrived at the transitional epithelium, a potential site of uropathogenic E. coli infection. Gallium and iron were similarly but not identically distributed in the tissues, suggesting that at least some distribution mechanisms are not common between the two elements. The results of this study indicate that gallium maltolate may be a suitable candidate for further development as a novel antimicrobial therapy for urinary tract infections caused by uropathogenic E. coli. PMID:23877680

  11. Anisotropy of the magnetic susceptibility of gallium

    USGS Publications Warehouse

    Pankey, T., Jr.

    1960-01-01

    The bulk magnetic susceptibilities of single gallium crystals and polycrystalline gallium spheres were measured at 25??C. The following anisotropic diamagnetic susceptibilities were found: a axis (-0.119??0. 001)??10-6 emu/g, b axis (-0.416??0.002)??10 -6 emu/g, and c axis (-0.229??0.001) emu/g. The susceptibility of the polycrystalline spheres, assumed to be the average value for the bulk susceptibility of gallium, was (-0.257??0.003)??10-6 emu/g at 25??C, and (-0.299??0.003)??10-6 emu/g at -196??C. The susceptibility of liquid gallium was (0.0031??0.001) ??10-6 emu/g at 30??C and 100??C. Rotational diagrams of the susceptibilities in the three orthogonal planes of the unit cell were not sinusoidal. The anisotropy in the single crystals was presumably caused by the partial overlap of Brillouin zone boundaries by the Fermi-energy surface. The large change in susceptibility associated with the change in state was attributed to the absence of effective mass influence in the liquid state. ?? 1960 The American Institute of Physics.

  12. Thermodynamic binding constants for gallium transferrin

    SciTech Connect

    Harris, W.R.; Pecoraro, V.L.

    1983-01-18

    Gallium-67 is widely used as an imaging agent for tumors and inflammatory abscesses. It is well stablished that Ga/sup 3 +/ travels through the circulatory system bound to the serum iron transport protein transferrin and that this protein binding is an essential step in tumor localization. However, there have been conflicting reports on the magnitude of the gallium-transferrin binding constants. Therefore, thermodynamic binding constants for gallium complexation at the two specific metal binding sites of human serum transferrin at pH 7.4 and 5 mM NaHCO/sub 3/ have been determined by UV difference spectroscopy. The conditional constants calculated for 27 mM NaHCO/sub 3/ are log K/sub 1/* = 20.3 and log K/sub 2/* = 19.3. These results are discussed in relation to the thermodynamics of transferrin binding of Fe/sup 3 +/ and to previous reports on gallium binding. The strength of transferrin complexation is also compared to that of a series of low molecular weight ligands by using calculated pM values (pM = -log (Ga(H/sub 2/O)/sub 6/)) to express the effective binding strength at pH 7.4.

  13. Gallium nitride junction field-effect transistor

    DOEpatents

    Zolper, John C.; Shul, Randy J.

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  14. Gallium nitride junction field-effect transistor

    DOEpatents

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  15. 49 CFR 173.162 - Gallium.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... refrigeration. If a refrigerant is used, all of the above materials used in the packaging of gallium must be chemically and physically resistant to the refrigerant and must have impact resistance at the low temperatures of the refrigerant employed. If dry ice is used, the outer packaging must permit the release...

  16. 49 CFR 173.162 - Gallium.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... refrigeration. If a refrigerant is used, all of the above materials used in the packaging of gallium must be chemically and physically resistant to the refrigerant and must have impact resistance at the low temperatures of the refrigerant employed. If dry ice is used, the outer packaging must permit the release...

  17. Gallium-positive Lyme disease myocarditis

    SciTech Connect

    Alpert, L.I.; Welch, P.; Fisher, N.

    1985-09-01

    In the course of a work-up for fever of unknown origin associated with intermittent arrhythmias, a gallium scan was performed which revealed diffuse myocardial uptake. The diagnosis of Lyme disease myocarditis subsequently was confirmed by serologic titers. One month following recovery from the acute illness, the abnormal myocardial uptake completely resolved.

  18. Extrapulmonary localization of gallium in sarcoidosis

    SciTech Connect

    Rohatgi, P.K.; Singh, R.; Vieras, F.

    1987-01-01

    This paper describes the spectrum of extrapulmonary localization of gallium in patients with sarcoidosis. The usefulness of Ga-67 scintiscans in detecting clinically occult lesions, in directing clinicians to accessible sites for biopsy, and in following the course of extrapulmonary sites of involvement with therapy is emphasized.

  19. Gallium Electromagnetic (GEM) Thruster Performance Measurements

    NASA Technical Reports Server (NTRS)

    Thomas, Robert E.; Burton, Rodney L.; Polzin, K. A.

    2009-01-01

    Discharge current, terminal voltage, and mass bit measurements are performed on a coaxial gallium electromagnetic thruster at discharge currents in the range of 7-23 kA. It is found that the mass bit varies quadratically with the discharge current which yields a constant exhaust velocity of 20 km/s. Increasing the electrode radius ratio of the thruster from to 2.6 to 3.4 increases the thruster efficiency from 21% to 30%. When operating with a central gallium anode, macroparticles are ejected at all energy levels tested. A central gallium cathode ejects macroparticles when the current density exceeds 3.7 10(exp 8) A/square m . A spatially and temporally broad spectroscopic survey in the 220-520 nm range is used to determine which species are present in the plasma. The spectra show that neutral, singly, and doubly ionized gallium species are present in the discharge, as well as annular electrode species at higher energy levels. Axial Langmuir triple probe measurements yield electron temperatures in the range of 0.8-3.8 eV and electron densities in the range of 8 x 10(exp )20 to 1.6 x 10(exp 21) m(exp -3) . Triple probe measurements suggest an exhaust plume with a divergence angle of 9 , and a completely doubly ionized plasma at the ablating thruster cathode.

  20. Palladium alloys for biomedical devices.

    PubMed

    Wataha, John C; Shor, Kavita

    2010-07-01

    In the biomedical field, palladium has primarily been used as a component of alloys for dental prostheses. However, recent research has shown the utility of palladium alloys for devices such as vascular stents that do not distort magnetic resonance images. Dental palladium alloys may contain minor or major percentages of palladium. As a minor constituent, palladium hardens, strengthens and increases the melting range of alloys. Alloys that contain palladium as the major component also contain copper, gallium and sometimes tin to produce strong alloys with high stiffness and relatively low corrosion rates. All current evidence suggests that palladium alloys are safe, despite fears about harmful effects of low-level corrosion products during biomedical use. Recent evidence suggests that palladium poses fewer biological risks than other elements, such as nickel or silver. Hypersensitivity to palladium alone is rare, but accompanies nickel hypersensitivity 90-100% of the time. The unstable price of palladium continues to influence the use of palladium alloys in biomedicine. PMID:20583886

  1. Gallium nitride nanowire electromechanical resonators

    NASA Astrophysics Data System (ADS)

    Gray, Jason Michael

    Nanoscale mechanical resonators are of great interest for high-resolution sensing applications, where the small resonator mass and high quality factor (Q, defined as resonance frequency f0 over full width at half maximum power) lead to unprecedented sensitivity. Here, we investigate gallium nitride (GaN) nanowire (NW) resonators. The single-crystal, c-axis NWs are 5 mum -- 20 mum long, with diameters from 50 nm -- 500 nm, and grow essentially free of defects. Our initial experiments involve measuring the resonances of as-grown NWs in a scanning electron microscope, where we observe exceptionally high Q values of 10 4 -- 105, one to two orders of magnitude higher than most NWs of comparable size. Using a single NW as a mass sensor, we then demonstrate a sub-attogram mass sensitivity. To provide a more flexible measurement technique that avoids electron-microscope detection, we fabricate doubly clamped NWs with an entirely electronic drive and readout scheme using a combination of lithographic patterning and dielectrophoresis. An electrostatic gate induces vibration, while readout utilizes the piezoresistivity of GaN. Observed resonances range from 9--36 MHz with Q values typically around 103 at room temperature and 10 -4 Pa. We use the behavior of f0 and Q to sense the NW's local environment, such as the additional sources of energy dissipation not present in the as-grown NWs. By cooling the device to 8 K, Q increases by an order of magnitude to above 104, with a highest value to date of 26,000 under vacuum. We explore additional NW properties through the thermal noise in the NW's mechanical motion and the exponential decay of mechanical motion in the presence of burst drive. Finally, we investigate the low-frequency 1/f parameter noise displayed by f0. We show that the noise in f0 is consistent with noise in the NW's resistance leading to temperature noise from local Joule heating, which in turn generates resonance frequency noise. For sensor applications, there will be optimal drive conditions that balance the f 0 noise with the signal-to-noise ratio of the system. With these insights, along with the simple drive and readout technique, these GaN-NW doubly clamped resonators have significant potential for high-resolution sensing applications.

  2. Gallium 67 scintigraphy in glomerular disease

    SciTech Connect

    Bakir, A.A.; Lopez-Majano, V.; Levy, P.S.; Rhee, H.L.; Dunea, G.

    1988-12-01

    To evaluate the diagnostic usefulness of gallium 67 scintigraphy in glomerular disease, 45 patients with various glomerulopathies, excluding lupus nephritis and renal vasculitis, were studied. Persistent renal visualization 48 hours after the gallium injection, a positive scintigram, was graded as + (less than), ++ (equal to), and +++ (greater than) the hepatic uptake. Positive scintigrams were seen in ten of 16 cases of focal segmental glomerulosclerosis, six of 11 cases of proliferative glomerulonephritis, and one case of minimal change, and one of two cases of membranous nephropathy; also in three of six cases of sickle glomerulopathy, two cases of diabetic neuropathy, one of two cases of amyloidosis, and one case of mild chronic allograft rejection. The 25 patients with positive scans were younger than the 20 with negative scans (31 +/- 12 v 42 +/- 17 years; P less than 0.01), and exhibited greater proteinuria (8.19 +/- 7.96 v 2.9 +/- 2.3 S/d; P less than 0.01) and lower serum creatinine values (2 +/- 2 v 4.1 +/- 2.8 mg/dL; P less than 0.01). The amount of proteinuria correlated directly with the intensity grade of the gallium image (P less than 0.02), but there was no correlation between the biopsy diagnosis and the outcome of the gallium scan. It was concluded that gallium scintigraphy is not useful in the differential diagnosis of the glomerular diseases under discussion. Younger patients with good renal function and heavy proteinuria are likely to have a positive renal scintigram regardless of the underlying glomerulopathy.

  3. Inflammatory pseudotumor: A gallium-avid mobile mesenteric mass

    SciTech Connect

    Auringer, S.T.; Scott, M.D.; Sumner, T.E. )

    1991-08-01

    An 8-yr-old boy with a 1-mo history of culture-negative fever and anemia underwent gallium, ultrasound, and computed tomography studies as part of the evaluation of a fever of unknown origin. These studies revealed a mobile gallium-avid solid abdominal mass subsequently proven to be an inflammatory pseudotumor of the mesentery, a rare benign mass. This report documents the gallium-avid nature of this rare lesion and discusses associated characteristic clinical, pathologic, and radiographic features.

  4. Survey of the market, supply and availability of gallium

    SciTech Connect

    Rosi, F.D.

    1980-07-01

    The objective of this study was to assess the present consumption and supply of gallium, its potential availability in the satellite power system (SPS) implementation time frame, and commercial and new processing methods for increasing the production of gallium. Findings are reported in detail. The findings strongly suggest that with proper long range planning adequate gallium would be available from free-enterprise world supplies of bauxite for SPS implementation.

  5. Interactions of zircaloy cladding with gallium -- 1997 status

    SciTech Connect

    Wilson, D.F.; DiStefano, J.R.; King, J.F.; Manneschmidt, E.T.; Strizak, J.P.

    1997-11-01

    A four phase program has been implemented to evaluate the effect of gallium in mixed oxide (MOX) fuel derived from weapons grade (WG) plutonium on Zircaloy cladding performance. The objective is to demonstrate that low levels of gallium will not compromise the performance of the MOX fuel system in LWR. This graded, four phase experimental program will evaluate the performance of prototypic Zircaloy cladding materials against: (1) liquid gallium (Phase 1), (2) various concentrations of Ga{sub 2}O{sub 3} (Phase 2), (3) centrally heated surrogate fuel pellets with expected levels of gallium (Phase 3), and (4) centrally heated prototypic MOX fuel pellets (Phase 4). This status report describes the results of an initial series of tests for phases 1 and 2. Three types of tests are being performed: (1) corrosion, (2) liquid metal embrittlement (LME), and (3) corrosion mechanical. These tests are designed to determine the corrosion mechanisms, thresholds for temperature and concentration of gallium that may delineate behavioral regimes, and changes in mechanical properties of Zircaloy. Initial results have generally been favorable for the use of WG-MOX fuel. The MOX fuel cladding, Zircaloy, does react with gallium to form intermetallic compounds at {ge} 300 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (in parts per million) of gallium in the MOX fuel. While continued migration of gallium into the initially formed intermetallic compound results in large stresses that can lead to distortion, this is also highly unlikely because of the low mass of gallium or gallium oxide present and expected clad temperatures below 400 C. Furthermore, no evidence for grain boundary penetration by gallium has been observed.

  6. Interactions of Zircaloy cladding with gallium: 1998 midyear status

    SciTech Connect

    Wilson, D.F.; DiStefano, J.R.; Strizak, J.P.; King, J.F.; Manneschmidt, E.T.

    1998-06-01

    A program has been implemented to evaluate the effect of gallium in mixed-oxide (MOX) fuel derived from weapons-grade (WG) plutonium on Zircaloy cladding performance. The objective is to demonstrate that low levels of gallium will not compromise the performance of the MOX fuel system in a light-water reactor. The graded, four-phase experimental program was designed to evaluate the performance of prototypic Zircaloy cladding materials against (1) liquid gallium (Phase 1), (2) various concentrations of Ga{sub 2}O{sub 3} (Phase 2), (3) centrally heated surrogate fuel pellets with expected levels of gallium (Phase 3), and (4) centrally heated prototypic MOX fuel pellets (Phase 4). This status report describes the results of a series of tests for Phases 1 and 2. Three types of tests are being performed: (1) corrosion, (2) liquid metal embrittlement, and (3) corrosion-mechanical. These tests will determine corrosion mechanisms, thresholds for temperature and concentration of gallium that may delineate behavioral regimes, and changes in the mechanical properties of Zircaloy. Initial results have generally been favorable for the use of WG-MOX fuel. The MOX fuel cladding, Zircaloy, does react with gallium to form intermetallic compounds at {ge}300 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (parts per million) of gallium in the MOX fuel. Although continued migration of gallium into the initially formed intermetallic compound can result in large stresses that may lead to distortion, this was shown to be extremely unlikely because of the low mass of gallium or gallium oxide present and expected clad temperatures below 400 C. Furthermore, no evidence for grain boundary penetration by gallium has been observed.

  7. Light Elements in the Core: Constraints from Gallium Partitioning

    NASA Astrophysics Data System (ADS)

    Blanchard, I.; Badro, J.; Siebert, J.; Ryerson, F. J.

    2014-12-01

    The formation of Earth's core has left a compositional imprint on the mantle, depleting and fractionating most of its siderophile (iron-loving) elements. Gallium is a moderately siderophile, hence it should be strongly depleted in the mantle. However, gallium concentration in the mantle matches that of lithophile (silicate-loving) elements having the same volatility. That is to say that either gallium behaves as a lithophile element during core formation, or a large influx of gallium was brought to the Earth after the core had formed. Geochemical evidence does not support the latter hypothesis, as it would require all other lithophile elements with similar volatility to be enriched in the mantle, or for late accretion to be composed of anomalously gallium-rich objects. In order to mitigate this issue, experimental studies have tried to understand how gallium behaves during core segregation by gauging the effects of pressure, temperature and oxygen fugacity on the partitioning of gallium between metal and silicate. None of these parameters provided the first-order change required to match the observation. We investigated the influence of core composition on gallium partitioning. The core in known to contain light-elements (oxygen, silicon sulfur and carbon), and those can change the activity of gallium in the metal, and strongly affect the behavior of gallium during core formation. We performed a series of metal-silicate partitioning experiments (2 GPa, 1673-2073 K) in a piston-cylinder press. We varied the light-element composition of the metal and observed that Si and O have a very strong influence on the activity of gallium, making it more lithophile. We then modeled terrestrial accretion as a continuous process and tested different accretion histories; we can reproduce the mantle concentration of gallium if the core segregates in a deep magma ocean (>40 GPa) and contains large amounts of silicon or oxygen.

  8. Corrosion development between liquid gallium and four typical metal substrates used in chip cooling device

    NASA Astrophysics Data System (ADS)

    Deng, Yue-Guang; Liu, Jing

    2009-06-01

    The limitation of the currently available thermal management method has put an ever serious challenge for computer chip designers. A liquid metal with low melting point around room temperature was recently identified as a powerful coolant of driving heat away because of its superior thermo-physical properties and the unique ability to be driven efficiently by a completely silent electromagnetic pump. However, the adoption of gallium, one of the best candidates as metal coolant so far, may cause serious corrosion to the structure materials and subsequently affect the performance or even dangerous running of the cooling system. To address this emerging critical issue, here the compatibility of gallium with four typical metal substrates (6063 Aluminum-Alloy, T2 Copper-Alloy, Anodic Coloring 6063 Aluminum-Alloy and 1Cr18Ni9 Stainless Steel) was comprehensively investigated in order to better understand the corrosion mechanisms and help find out the most suitable structure material for making a liquid metal cooling device. To grasp in detail the dynamic corrosion behavior, an image acquisition and contrasting method was developed. Moreover, corrosion morphology analyses were performed by means of scanning electron microscope (SEM). The chemical compositions of the corroded layers were evaluated using energy dispersive spectrometry (EDS). According to the experiments, it was found that, the corrosion of the 6063 Aluminum-Alloy was rather evident and serious under the temperature range for chip cooling. The loose corrosion product will not only have no protection for the inner substrate, but also accelerate the corrosion process. Compared to the 6063 Aluminum-Alloy, T2 Copper-Alloy showed a slow and general corrosion, but part of the corrosion product can shed from the substrate, which will accelerate corrosion action and may block the flowing channel. Anodic Coloring 6063 Aluminum-Alloy and 1Cr18Ni9 Stainless Steel were found to have excellent corrosion resistance among these four specimens. No evident corrosion phenomena were found under the examination of SEM and EDS when exposed for 30 days at the temperature of 60C, which suggests their suitability as structure materials for the flow of liquid metal. However, as for the Anodic Coloring 6063 Aluminum-Alloy, surface treatment and protection are of vital importance. The present study is of significance for making a liquid metal chip cooling device which can actually be used in the future computer industry.

  9. Limiting pump intensity for sulfur-doped gallium selenide crystals

    NASA Astrophysics Data System (ADS)

    Guo, J.; Li, D.-J.; Xie, J.-J.; Zhang, L.-M.; Feng, Z.-S.; Andreev, Yu M.; Kokh, K. A.; Lanskii, G. V.; Potekaev, A. I.; Shaiduko, A. V.; Svetlichnyi, V. A.

    2014-05-01

    High optical quality undoped and sulfur-doped gallium selenide crystals were grown from melts by the modified vertical Bridgman method. Detailed study of the damage produced under femtosecond pulse exposure has shown that evaluation of the damage threshold by visual control is unfounded. Black matter spots produced on crystal surfaces do not noticeably decrease either its transparency or its frequency conversion efficiency as opposed to real damage identified as caked well-cohesive gallium structures. For the first time it was demonstrated that optimally sulfur-doped gallium selenide crystal possesses the highest resistivity to optical emission (about four times higher in comparison with undoped gallium?selenide).

  10. Scanning probe microscopy on new dental alloys

    NASA Astrophysics Data System (ADS)

    Reusch, B.; Geis-Gerstorfer, J.; Ziegler, C.

    Surface analytical methods such as scanning force microscopy (SFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) were used to determine the surface properties of amalgam substitutes as tooth filling materials. In particular the corrosion and the passivation behavior of new gallium restorative materials were studied. To give relevant practical data, the measurements were performed with and without the alloys being stored in artificial saliva to simulate physiological oral conditions.

  11. Optical properties and plasmonic response of silver-gallium nanostructures

    SciTech Connect

    Lereu, A. L.; Lemarchand, F.; Zerrad, M.; Yazdanpanah, M.; Passian, A.

    2015-02-14

    Silver and gallium form an alloy Ag{sub 2}Ga via a room temperature spontaneous self-assembly that exhibits remarkable mechanical and electrical properties suitable for nanoscale measurements. However, whether photon excitation of plasmons in this emerging nanomaterial is retained or not has not been established. Here, we present a thin film formation of Ag{sub 2}Ga via a spreading-reactive process of liquid Ga on an Ag film and a characterization of its dielectric function ϵ(E) = ϵ{sub 1}(E) + iϵ{sub 2}(E) in the photon energy range 1.42 eV ≤ E < 4.2 eV. It is observed that while the plasmon damping increases, near an energy of 2.25 eV, the real part of ϵ exhibits a crossing with respect to that of Ag. Furthermore, the impact of new plasmon supporting materials is discussed and in order to enable further applications in plasmonics, the possibility of photon excitation of surface plasmons in Ag{sub 2}Ga is studied.

  12. Efficient water reduction with gallium phosphide nanowires.

    PubMed

    Standing, Anthony; Assali, Simone; Gao, Lu; Verheijen, Marcel A; van Dam, Dick; Cui, Yingchao; Notten, Peter H L; Haverkort, Jos E M; Bakkers, Erik P A M

    2015-01-01

    Photoelectrochemical hydrogen production from solar energy and water offers a clean and sustainable fuel option for the future. Planar III/V material systems have shown the highest efficiencies, but are expensive. By moving to the nanowire regime the demand on material quantity is reduced, and new materials can be uncovered, such as wurtzite gallium phosphide, featuring a direct bandgap. This is one of the few materials combining large solar light absorption and (close to) ideal band-edge positions for full water splitting. Here we report the photoelectrochemical reduction of water, on a p-type wurtzite gallium phosphide nanowire photocathode. By modifying geometry to reduce electrical resistance and enhance optical absorption, and modifying the surface with a multistep platinum deposition, high current densities and open circuit potentials were achieved. Our results demonstrate the capabilities of this material, even when used in such low quantities, as in nanowires. PMID:26183949

  13. Efficient water reduction with gallium phosphide nanowires

    PubMed Central

    Standing, Anthony; Assali, Simone; Gao, Lu; Verheijen, Marcel A.; van Dam, Dick; Cui, Yingchao; Notten, Peter H. L.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

    2015-01-01

    Photoelectrochemical hydrogen production from solar energy and water offers a clean and sustainable fuel option for the future. Planar III/V material systems have shown the highest efficiencies, but are expensive. By moving to the nanowire regime the demand on material quantity is reduced, and new materials can be uncovered, such as wurtzite gallium phosphide, featuring a direct bandgap. This is one of the few materials combining large solar light absorption and (close to) ideal band-edge positions for full water splitting. Here we report the photoelectrochemical reduction of water, on a p-type wurtzite gallium phosphide nanowire photocathode. By modifying geometry to reduce electrical resistance and enhance optical absorption, and modifying the surface with a multistep platinum deposition, high current densities and open circuit potentials were achieved. Our results demonstrate the capabilities of this material, even when used in such low quantities, as in nanowires. PMID:26183949

  14. Efficient water reduction with gallium phosphide nanowires

    NASA Astrophysics Data System (ADS)

    Standing, Anthony; Assali, Simone; Gao, Lu; Verheijen, Marcel A.; van Dam, Dick; Cui, Yingchao; Notten, Peter H. L.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

    2015-07-01

    Photoelectrochemical hydrogen production from solar energy and water offers a clean and sustainable fuel option for the future. Planar III/V material systems have shown the highest efficiencies, but are expensive. By moving to the nanowire regime the demand on material quantity is reduced, and new materials can be uncovered, such as wurtzite gallium phosphide, featuring a direct bandgap. This is one of the few materials combining large solar light absorption and (close to) ideal band-edge positions for full water splitting. Here we report the photoelectrochemical reduction of water, on a p-type wurtzite gallium phosphide nanowire photocathode. By modifying geometry to reduce electrical resistance and enhance optical absorption, and modifying the surface with a multistep platinum deposition, high current densities and open circuit potentials were achieved. Our results demonstrate the capabilities of this material, even when used in such low quantities, as in nanowires.

  15. Positive gallium scan in retroperitoneal fibrosis

    SciTech Connect

    Liebman, R.M.

    1983-11-01

    Many articles have described the computed tomographic (CT) diagnosis of retroperitoneal fibrosis and its similarities to lymphoma and other retroperitoneal processes. The author reports a patient with classic uroradiographic findings of retroperitoneal fibrosis and CT findings consistent with extensive periaortic masses. A gallium-67 (/sup 67/Ga) citrate scan, performed to exclude lymphoma, demonstrated intense periaortic activity. Specimens obtained during laparotomy, however, showed typical pathologic findings of retroperitoneal fibrosis without evidence of lymphoma or other malignancies.

  16. Gallium-67 imaging in muscular sarcoidosis

    SciTech Connect

    Edan, G.; Bourguet, P.; Delaval, P.; Herry, J.Y.

    1984-07-01

    A case is presented of sarcoid myopathy in which radiogallium was seen to accumulate in the sites of muscle involvement. Uptake of the radiotracer disappeared following institution of corticosteroid therapy. The exceptional nature of this case contrasts with the high frequency of biopsy evidence of sarcoid granulomas in muscle. Gallium-67 imaging can be used to determine the extent of muscle involvement and, through evaluation of uptake intensity, the degree of disease activity before and after treatment.

  17. A Gallium multiphase equation of state

    SciTech Connect

    Crockett, Scott D; Greeff, Carl

    2009-01-01

    A new SESAME multiphase Gallium equation of state (EOS) has been developed. The equation of state includes three of the solid phases (Ga I, Ga II, Ga III) and a fluid phase (liquid/gas). The EOS includes consistent latent heat between the phases. We compare the results to the liquid Hugoniol data. We also explore the possibility of re-freezing via dynamic means such as isentropic and shock compression.

  18. High-dose gallium imaging in lymphoma

    SciTech Connect

    Anderson, K.C.; Leonard, R.C.; Canellos, G.P.; Skarin, A.T.; Kaplan, W.D.

    1983-08-01

    The role of gallium-67 imaging in the management of patients with lymphoma, traditionally assessed using low tracer doses and the rectilinear scanner, was assessed when using larger doses (7 to 10 mCi) and a triple-peak Anger camera. Gallium scan results in 51 patients with non-Hodgkin's lymphoma and 21 patients with Hodgkin's disease were compared with simultaneous radiologic, clinical, and histopathologic reports. Subsequent disease course was also evaluated in light of radionuclide findings. Sensitivity and specificity of the scans were 0.90 or greater for both non-Hodgkin's lymphoma and Hodgkin's disease, and overall accuracy by site was 96 percent. Although there are insufficient numbers of pretreatment scans to allow any conclusions, our data suggest that newer approaches to gallium scanning in treated patients are (1) highly specific in all lymphomas and most sensitive in high-grade non-Hodgkin's lymphoma and Hodgkin's disease; (2) valuable in assessing the mediastinum in both non-Hodgkin's lymphoma and Hodgkin's disease; and (3) helpful adjuncts to computed tomographic scanning and ultrasonography in assessing abdominal node disease.

  19. Gallium arsenide for devices and integrated circuits

    SciTech Connect

    Morgan, D.V.; Thomas, H.

    1986-01-01

    Gallium Arsenide has long been hailed as the material of the future and it is only in recent years that the technology associated with its growth and processing has matured to the point where IC production can be contemplated at the industrial level. This point has now been reached and the electronics industries in Europe, the USA and Japan are actively moving from research activities into product development using this and related material. The text is divided into 15 chapters: Gallium Arsenide: Physical and Transport Properties; Liquid phase and Vapour Phase Epitaxy of GaAs and Related Compounds; Expitaxial Growth and GaAs: MBE and MOCVD; Characterization of GaAs I: Electrical Techniques; Characterization of GaAsII: Ion Beam Analysis; Ion Implantation; Wet and Dry Processing GaAs; Microwave and Millimetre - Wave Diodes; GaAs Mesfet's and High Electron Mobility Transistors (HEMT); Optoelectronic Devices and Components; Gallium Arsenide Monolithic Microwave Integrated Circuits; GaAs Digital Integrated Circuits; III-V Semiconductors for Solar Cells.

  20. Interfacing epitaxial oxides to gallium nitride

    NASA Astrophysics Data System (ADS)

    Losego, Mark Daniel

    Molecular beam epitaxy (MBE) is lauded for its ability to control thin film material structures at the atomic level. This precision of control can improve performance of microelectronic devices and cultivate the development of novel device structures. This thesis explores the utility of MBE for designing interfaces between oxide epilayers and the wide band gap semiconductor gallium nitride (GaN). The allure of wide gap semiconductor microelectronics (like GaN, 3.4 eV) is their ability to operate at higher frequencies, higher powers, and higher temperatures than current semiconductor platforms. Heterostructures between ferroelectric oxides and GaN are also of interest for studying the interaction between GaN's fixed polarization and the ferroelectric's switchable polarization. Two major obstacles to successful integration of oxides with GaN are: (1) interfacial trap states; and (2) small electronic band offsets across the oxide/nitride interface due to the semiconductor's large band gap. For this thesis, epitaxial rocksalt oxide interfacial layers (8 eV band gap) are investigated as possible solutions to overcoming the challenges facing oxide integration with GaN. The cubic close-packed structure of rocksalt oxides forms a suitable epitaxial interface with the hexagonal close-packed wurtzite lattice of GaN. Three rocksalt oxide compounds are investigated in this thesis: MgO, CaO, and YbO. All are found to have a (111) MO || (0001) GaN; <1 10> MO || <11 20> GaN epitaxial relationship. Development of the epilayer microstructure is dominated by the high-energy polar growth surface (drives 3D nucleation) and the interfacial symmetry, which permits the formation of twin boundaries. Using STEM, strain relief for these ionicly bonded epilayers is observed to occur through disorder within the initial monolayer of growth. All rocksalt oxides demonstrate chemical stability with GaN to >1000C. Concurrent MBE deposition of MgO and CaO is known to form complete solid solutions. By controlling the composition of these alloys, the oxide's lattice parameter can be engineered to match GaN and reduce interfacial state density. Compositional control is a universal challenge to oxide MBE, and the MgO-CaO system (MCO) is further complicated by magnesium's high volatility and the lack of a thermodynamically stable phase. Through a detailed investigation of MgO's deposition rate and subsequent impact on MCO composition, the process space for achieving lattice-matched compositions to GaN are fully mapped. Lattice-matched compositions are demonstrated to have the narrowest off-axis rocking curve widths ever reported for an epitaxial oxide deposited directly on GaN (0.7 in ?-circle for 200 reflection). Epitaxial deposition of the ferroelectric (Ba,Sr)TiO3 by hot RF sputtering on GaN surfaces is also demonstrated. Simple MOS capacitors are fabricated from epitaxial rocksalt oxides and (Ba,Sr)TiO3 layers deposited on n-GaN substrates. Current-voltage measurements reveal that BST epilayers have 5 orders of magnitude higher current leakage than rocksalt epilayers. This higher leakage is attributed to the smaller band offset expected at this interface; modeling confirms that electronic transport occurs by Schottky emission. In contrast, current transport across the rocksalt oxide/GaN interface occurs by Frenkel-Poole emission and can be reduced with pre-deposition surface treatments. Finally, through this work, it is realized that the integration of oxides with III-nitrides requires an appreciation of many different fields of research including materials science, surface science, and electrical engineering. By recognizing the importance that each of these fields play in designing oxide/III-nitride interfaces, this thesis has the opportunity to explore other related phenomena including accessing metastable phases through MBE (ytterbium monoxide), spinodal decomposition in metastable alloys (MCO), how polar surfaces grown by MBE compensate their bound surface charge, room temperature epitaxy, and the use of surface modification

  1. Compensation and Characterization of Gallium Arsenide

    NASA Astrophysics Data System (ADS)

    Roush, Randy Allen

    1995-01-01

    The properties of transition metals in gallium arsenide have been previously investigated extensively with respect to activation energies, but little effort has been made to correlate processing parameters with electronic characteristics. Diffusion of copper in gallium arsenide is of technological importance due to the development of GaAs:Cu bistable photoconductive devices. Several techniques are demonstrated in this work to develop and characterize compensated gallium arsenide wafers. The material is created by the thermal diffusion of copper into silicon-doped GaAs. Transition metals generally form deep and shallow acceptors in GaAs, and therefore compensation is possible by material processing such that the shallow silicon donors are compensated by deep acceptors. Copper is an example of a transition metal that forms deep acceptors in GaAs, and therefore this work will focus on the compensation and characterization of GaAs:Si:Cu. The compensation of the material has shown that the lower diffusion temperatures (500-600^ circC) form primarily the well-known Cu _{rm B} centers whereas the higher temperature anneals (>750 ^circC) result in the formation of CU_{rm A}. Using compensation curves, the copper density is found by comparing the compensation temperature with copper solubility curves given by others. These curves also show that the formation of CU_{rm B}, EL2, and CU_{rm A} can be manipulated by varying processing parameters such as annealing temperature and arsenic pressure. The compensation results are confirmed using Temperature-Dependent Hall (TDH) measurements to detect the copper levels. Also, the photoconductive properties of the material under illumination from 1.06 and 2.1 ?m wavelength laser pulses have been used to demonstrate the effects of the different processing procedures. The persistent photoconductivity inherent to these devices under illumination from the 1.06 ?m laser pulse is used to predict the concentration of the Cu_ {rm B}<=vel, and the fast hole capture times of the various acceptors are found through the response to a 140 ps (FWHM), 2.1 ?m laser pulse. Finally, the physical distribution of the copper atoms in the gallium arsenide wafer is examined using Glow Discharge and Secondary Ion Mass Spectroscopy (GDMS and SIMS). These techniques have been used to show that the copper diffusion in gallium arsenide is non-uniform with respect to depth and surface position.

  2. Gallium scintigraphy in bone infarction. Correlation with bone imaging

    SciTech Connect

    Armas, R.R.; Goldsmith, S.J.

    1984-01-01

    The appearance of gallium-67 images in bone infarction was studied in nine patients with sickle cell disease and correlated with the bone scan findings. Gallium uptake in acute infarction was decreased or absent with a variable bone scan uptake, and normal in healing infarcts, which showed increased uptake on bone scan. The significance of these findings is discussed.

  3. Studies on the reliability of ni-gate aluminum gallium nitride / gallium nitride high electron mobility transistors using chemical deprocessing

    NASA Astrophysics Data System (ADS)

    Whiting, Patrick Guzek

    Aluminum Gallium Nitride / Gallium Nitride High Electron Mobility Transistors are becoming the technology of choice for applications where hundreds of volts need to be applied in a circuit at frequencies in the hundreds of gigahertz, such as microwave communications. However, because these devices are very new, their reliability in the field is not well understood, partly because of the stochastic nature of the defects which form as a result of their operation. Many analytical techniques are not well suited to the analysis of these defects because they sample regions of the device which are either too small or too large for accurate observation. The use of chemical deprocessing in addition to surface-sensitive analysis techniques such as Scanning Electron Microscopy and Scanning Probe Microscopy can be utilized in the analysis of defect formation in devices formed with nickel gates. Hydrofluoric acid is used to etch the passivation nitride which covers the semiconducting layer of the transistor. A metal etch utilizing FeCN/KI is used to etch the ohmic and gate contacts of the device and a long exposure in various solvent solutions is used to remove organic contaminants, exposing the surface of the semiconducting layer for analysis. Deprocessing was used in conjunction with a variety of metrology techniques to analyze three different defects. One of these defects is a nanoscale crack which emanates from metal inclusions formed during alloying of the ohmic contacts of the device prior to use in the field, could impact the yield of production-level manufacturing of these devices. This defect also appears to grow, in some cases, during electrostatic stressing. Another defect, a native oxide at the surface of the semiconducting layer which appears to react in the presence of an electric field, has not been observed before during post-mortem analysis of degraded devices. It could play a major part in the degredation of the gate contact during high-field, off-mode electrostatic stressing and could be the initiator of the pitting of the semiconducting layer of the gate contact, a defect which was also observed.

  4. Nuclear microprobe imaging of gallium nitrate in cancer cells

    NASA Astrophysics Data System (ADS)

    Ortega, Richard; Suda, Asami; Devès, Guillaume

    2003-09-01

    Gallium nitrate is used in clinical oncology as treatment for hypercalcemia and for cancer that has spread to the bone. Its mechanism of antitumor action has not been fully elucidated yet. The knowledge of the intracellular distribution of anticancer drugs is of particular interest in oncology to better understand their cellular pharmacology. In addition, most metal-based anticancer compounds interact with endogenous trace elements in cells, altering their metabolism. The purpose of this experiment was to examine, by use of nuclear microprobe analysis, the cellular distribution of gallium and endogenous trace elements within cancer cells exposed to gallium nitrate. In a majority of cellular analyses, gallium was found homogeneously distributed in cells following the distribution of carbon. In a smaller number of cells, however, gallium appeared concentrated together with P, Ca and Fe within round structures of about 2-5 μm diameter located in the perinuclear region. These intracellular structures are typical of lysosomial material.

  5. Calcium - niobium - gallium and calcium - lithium - niobium - gallium garnet crystals as active media for diode-pumped lasers

    SciTech Connect

    Voronko, Yu K; Es'kov, N A; Podstavkin, A S; Ryabochkina, P A; Sobol, A A; Ushakov, S N

    2001-06-30

    The energy and spectral parameters of calcium - niobium - gallium and calcium - lithium - niobium - gallium garnet crystals pumped by a 2 - W laser diode are studied. The stable parameters of laser radiation are demonstrated upon small variations in the temperature of the pump laser diode. (lasers, active media)

  6. The Preparation and Structural Characterization of Three Structural Types of Gallium Compounds Derived from Gallium (II) Chloride

    NASA Technical Reports Server (NTRS)

    Gordon, Edward M.; Hepp, Aloysius F.; Duraj. Stan A.; Habash, Tuhfeh S.; Fanwick, Phillip E.; Schupp, John D.; Eckles, William E.; Long, Shawn

    1997-01-01

    The three compounds Ga2Cl4(4-mepy)2 (1),[GaCl2(4-mepy)4]GaCl4x1/2(4-mepy); (2) and GaCl2(4-mepy)2(S2CNEt2); (3) (4-mepy= 4-methylpyridine) have been prepared from reactions of gallium (II) chloride in 4-methylpyridine and characterized by single-crystal X-ray analysis. Small variations in the reaction conditions for gallium(II) chloride can produce crystals with substantially different structural properties. The three compounds described here encompass a neutral gallium(II) dimer in which each gallium is four-coordinate, an ionic compound containing both anionic and cationic gallium complex ions with different coordination numbers and a neutral six-coordinate heteroleptic

  7. Composite droplets: evolution of InGa and AlGa alloys on GaAs(100)

    NASA Astrophysics Data System (ADS)

    Sablon, K. A.; Wang, Zh M.; Salamo, G. J.

    2008-03-01

    We present a comparative study for the evolution of utilizing indium gallium (InGa) and aluminum gallium (AlGa) alloys fabricated on GaAs(100) by means of simultaneous and sequential droplet formation. The composite alloys reported using the sequential approach lack the ability to precisely determine the final alloy composition as well as consistency in the density of the droplets. Further, the composition of the InGa alloy is not uniform, as seen by the size distribution using an atomic force microscope (AFM). Although this approach may be acceptable for materials with similar surface kinetics, as in the case of AlGa, it is not acceptable for InGa. This investigation reveals that the simultaneous approach for fabricating composite alloys is the optimum approach for producing InGa alloys with better control on composition for plasmonic applications such as plasmonic waveguides.

  8. Gallium scintigraphic pattern in lung CMV infections

    SciTech Connect

    Ganz, W.I.; Cohen, D.; Mallin, W.

    1994-05-01

    Due to extensive use of prophylactic therapy for Pneumonitis Carinii Pneumonia (PCP), Cytomegalic Viral (CMV) infection may now be the most common lung infection in AIDS patients. This study was performed to determine Gallium-67 patterns in AIDS patients with CMV. Pathology reports were reviewed in AIDS patients who had a dose of 5 to 10 mCi of Gallium-67 citrate. Analysis of images were obtained 48-72 hours later of the entire body was performed. Gallium-67 scans in 14 AIDS patients with biopsy proven CMV, were evaluated for eye, colon, adrenal, lung and renal uptake. These were compared to 40 AIDS patients without CMV. These controls had infections including PCP, Mycobacterial infections, and lymphocytic interstitial pneumonitis. 100% of CMV patients had bowel uptake greater than or equal to liver. Similar bowel activity was seen in 50% of AIDS patients without CMV. 71% had intense eye uptake which was seen in only 10% of patients without CMV. 50% of CMV patients had renal uptake compared to 5% of non-CMV cases. Adrenal uptake was suggested in 50%, however, SPECT imaging is needed for confirmation. 85% had low grade lung uptake. The low grade lung had perihilar prominence. The remaining 15% had high grade lung uptake (greater than sternum) due to superimposed PCP infection. Colon uptake is very sensitive indicator for CMV infection. However, observing eye, renal, and or adrenal uptake improved the diagnostic specificity. SPECT imaging is needed to confirm renal or adrenal abnormalities due to intense bowel activity present in 100% of cases. When high grade lung uptake is seen superimposed PCP is suggested.

  9. Gallium-67 imaging in muscular sarcoidosis

    SciTech Connect

    Edan, G.; Bourguet, P.; Delaval, P.; Herry, J.Y.

    1984-07-01

    A case is presented of sarcoid myopathy in which radiogallium was seen to accumulate in the sites of muscle involvement. Uptake of the radiotracer disappeared following institution of corticosteroid therapy. The exceptional nature of this case contrasts with the high frequency of biopsy evidence of sarcoid muscle disease but is consistent with the rarity of clinical evidence of sarcoid granulomas in muscle. Gallium-67 imaging can be used to determine the extent of muscle involvement and, through evaluation of uptake intensity, the degree of disease activity before and after treatment.

  10. Dispersion of Polymers in Metallic Gallium.

    PubMed

    Kumar, Vijay Bhooshan; Gedanken, Aharon; Avnir, David; Porat, Ze'ev

    2016-01-01

    This work examines the concept of dispersing polymers in metals. Herein, this was mainly studied with molten gallium, in which 5-18?wt?% of various short-chain polymers were incorporated and mixed. The nature of the solidified products was examined by using X-ray diffraction, electron microscopy, UV/Vis, differential scanning calorimetry, and thermal gravimetric analyses. It was found that some polymers can be dispersed as small domains within molten metals to form a heterogeneous solid. The ability to dope Ga with large polymers opens a new avenue to electronic materials. PMID:26494548

  11. Gallium induces the production of virulence factors in Pseudomonas aeruginosa.

    PubMed

    García-Contreras, Rodolfo; Pérez-Eretza, Berenice; Lira-Silva, Elizabeth; Jasso-Chávez, Ricardo; Coria-Jiménez, Rafael; Rangel-Vega, Adrián; Maeda, Toshinari; Wood, Thomas K

    2014-02-01

    The novel antimicrobial gallium is a nonredox iron III analogue with bacteriostatic and bactericidal properties, effective for the treatment of Pseudomonas aeruginosa in vitro and in vivo in mouse and rabbit infection models. It interferes with iron metabolism, transport, and presumably its homeostasis. As gallium exerts its antimicrobial effects by competing with iron, we hypothesized that it ultimately will lead cells to an iron deficiency status. As iron deficiency promotes the expression of virulence factors in vitro and promotes the pathogenicity of P. aeruginosa in animal models, it is anticipated that treatment with gallium will also promote the production of virulence factors. To test this hypothesis, the reference strain PA14 and two clinical isolates from patients with cystic fibrosis were exposed to gallium, and their production of pyocyanin, rhamnolipids, elastase, alkaline protease, alginate, pyoverdine, and biofilm was determined. Gallium treatment induced the production of all the virulence factors tested in the three strains except for pyoverdine. In addition, as the Ga-induced virulence factors are quorum sensing controlled, co-administration of Ga and the quorum quencher brominated furanone C-30 was assayed, and it was found that C-30 alleviated growth inhibition from gallium. Hence, adding both C-30 and gallium may be more effective in the treatment of P. aeruginosa infections. PMID:24151196

  12. Assessment of gallium-67 scanning in pulmonary and extrapulmonary sarcoidosis

    SciTech Connect

    Israel, H.L.; Gushue, G.F.; Park, C.H.

    1986-01-01

    Gallium-67 scans have been widely employed in patients with sarcoidosis as a means of indicating alveolitis and the need for corticosteroid therapy. Observation of 32 patients followed 3 or more years after gallium scans showed no correlation between findings and later course: of 10 patients with pulmonary uptake, 7 recovered with minor residuals; of 18 patients with mediastinal of extrathoracic uptake, 10 had persistent or progressive disease; of 4 patients with negative initial scans, 2 had later progression. The value of gallium-67 scans as an aid to diagnosis was studied in 40 patients with extrapulmonary sarcoidosis. In 12 patients, abnormal lacrimal, nodal, or pulmonary uptake aided in selection of biopsy sites. Gallium-67 scans and serum ACE levels were compared in 97 patients as indices of clinical activity. Abnormal gallium-67 uptake was observed in 96.3% of the tests in active disease, and ACE level elevation occurred in 56.3%. In 24 patients with inactive or recovered disease, abnormal gallium-67 uptake occurred in 62.5% and ACE level elevation in 37.5%. Gallium-67 scans have a limited but valuable role in the diagnosis and management of sarcoidosis.

  13. Behavior of Zircaloy Cladding in the Presence of Gallium

    SciTech Connect

    DiStefano, J.R.; King, J.F.; Manneschmidt, E.T.; Strizak, J.P.; Wilson, D.F.

    1998-09-28

    The U.S. Department of Energy has established a dual-track approach to the disposition of plutonium arising from the dismantling of nuclear weapons. Both immobilization and reactor-based mixed-oxide (MOX) fuel technologies are being evaluated. The reactor-based MOX fuel option requires assessment of the potential impact of concentrations of gallium (on the order of 1 to 10 ppm), not present in conventional MOX fuel, on cladding material performance. An experimental program was designed to evaluate the performance of prototypic Zircaloy cladding materials against (1) liquid gallium, and (2) various concentrations of G~03. Three types of tests were performed: (1) corrosion, (2) liquid metal embrittlement, and (3) corrosion-mechanical. These tests were to determine corrosion mechanisms, thresholds for temperature and concentration of gallium that delineate behavioral regimes, and changes in the mechanical properties of Zircaloy. Results have generally been favorable for the use of weapons-grade (WG) MOX fhel. The Zircaloy cladding does react with gallium to form intermetallic compounds at >3000 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (parts per million) of gallium in the MOX fuel. Furthermore, no evidence for grain boundary penetration by gallium or liquid metal embrittlement was observed.

  14. Dispersion of submicron Ni particles into liquid gallium

    NASA Astrophysics Data System (ADS)

    Cao, L. F.; Park, H. S.; Dodbiba, G.; Fujita, T.

    2008-06-01

    In this paper a liquid gallium with a low melting temperature and good thermal conductivity was used as a carrier to develop a new magnetorheological (MR) fluid that can be employed in energy convection devices. Submicron nickel particles, coated with silica, were chosen to be dispersed in the liquid gallium. The silica coating was used to improve the dispersion and prepare the composite particles with a density similar to that of the carrier liquid, i.e., liquid gallium. The supercooling phenomenon of liquid gallium was analyzed to better understand the dispersion of particles. The magnetization behaviours of both the silica-coated nickel particles and the synthesized MR fluids were measured. The results showed that the silica-coated nickel particles exhibited a shell-type structure, and the composite particle with a density same as the one of liquid gallium can be obtained by controlling the thickness of the coating layer to approximately 22 nm. The submicron nickel particles with the help of silica coating can be easily dispersed into liquid gallium. It was found that the supercooling of liquid gallium varied from 13.5 K to 19.3 K depending on the thickness of the coating layer of the dispersed particles. The saturation magnetization of the composite particles was reduced due to the occurrence of a non-magnetic silica layer. Figs 5, Refs 14.

  15. Gallium scanning in lymphoid interstitial pneumonitis of children with AIDS

    SciTech Connect

    Schiff, R.G.; Kabat, L.; Kamani, N.

    1987-12-01

    Lymphoid interstitial pneumonitis (LIP) is a frequent pulmonary complication in the child with the acquired immune deficiency syndrome (AIDS) and human immunodeficiency virus (HIV) infection. We report the gallium scan findings in two children with AIDS and LIP. Gallium scintigraphy in both children demonstrated increased radionuclide concentration throughout the lungs, a pattern indistinguishable scintigraphically from that of Pneumocystis carinii pneumonia (PCP). This should alert nuclear medicine practitioners and referring physicians to another cause of diffusely increased gallium uptake in the lungs of patients with AIDS.

  16. Semiquantitative gallium scintigraphy in patients with osteogenic sarcoma

    SciTech Connect

    Yeh, S.D.; Rosen, G.; Caparros, B.; Benua, R.S.

    1984-04-01

    Sequential gallium scans were performed in 37 patients with newly diagnosed osteogenic sarcoma. High gallium uptake was found more often in males in the 10 to 19 age group and in femoral lesions. High uptake was also seen in patients who had predominantly osteoblastic or mixed changes on radiographs and in those who had a soft tissue mass. Following chemotherapy, significant decrease of tumor to nontumor ratio occurred in the patients who responded to treatment as shown by a Grade III or IV response on histologic examinations at the time of en bloc resection. It is concluded that semiquantitative gallium scintigraphy is useful in monitoring therapeutic response in patients with osteogenic sarcoma.

  17. Fabrication, performance and degradation mechanism of aluminum gallium nitride/gallium nitride heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Kim, Hyungtak

    Gallium nitride (GaN) has attracted a lot of attention as the next generation of semiconductor material for microwave power application. The unique and superior material properties of GaN and its heterostructure, such as excellent transport property, high breakdown voltage and sheet carrier concentration, and thermal and mechanical stabilities, enable AlGaN/GaN heterostructure field effect transistors (HFETs) to deliver unprecedented levels of microwave power performance. Potential applications include ultra-wide bandwidth communications and radar systems, wireless base stations, and communications satellites. Tremendous efforts to realize the potential of Al-GaN/GaN HFETs have been made over the last decade focusing on improving microwave power performance via optimizing material growth and semiconductor processing technologies. As the device performance is getting mature, the device's reliability becomes a major concern for manufacturability of commercially available AlGaN/GaN HFETs. However, comprehensive study on the reliability of these devices is still lacking. This dissertation describes the fabrication, performance and degradation characteristics and mechanism of AlGaN/GaN HFETs. The devices were fabricated with alloyed Ti/Al/Ti/Au ohmic contact and Ni/Au mushroom gate contact using E-beam lithography. The device's microwave performance was significantly improved after SiN passivation due to reduced surface effects. Several degradation modes, primarily a decrease of the output current and microwave output power density, were observed under various electrical stress tests including high current stress, high field stress, and RF overdrive. To further investigate the physical mechanism of observed degradations, SiN passivation, pulsed IV (gate lag), low frequency noise measurements, deep level transient spectroscopy (DLTS), and scanning kelvin probe microscopy (SKPM) have all been employed with hot electron stress testing. The results clearly demonstrated that charge accumulation and trap creation at the semiconductor surface and interface induced by hot electron effects are responsible for observed degradation.

  18. Magnetic properties of epoxy-bonded iron-gallium particulate composites

    NASA Astrophysics Data System (ADS)

    Walters, K.; Busbridge, S.; Walters, S.

    2013-02-01

    This paper presents the production process and the results of investigations into the microstructure and magnetic properties of epoxy-bonded iron-gallium (Galfenol) particulate composites. The manufactured composites consist of powdered Fe80Ga20 alloy particles of three different size distributions (ranging from 20 to 200 ?m), bonded in an epoxy matrix with a filling factor of 0.80. The filling factor is defined as the ratio of the volume of Fe-Ga powder to the total volume of the composites constituents. The microstructure of the powdered alloy has been examined using x-ray diffractometry (XRD), and Mssbauer spectroscopy. Results for the measured magnetic hysteresis loop (B-H curve), static magnetostriction (?) versus applied field and dynamic relative permeability (?r33) are presented for the alloy in the forms of bulk material, powders and composites subsequently manufactured. The highest value of magnetostriction (360 ppm) has been found in the composite with grain size in the range of 50-100 ?m. On reversing the magnetic field direction, large magnetostrictive hysteresis for these samples has been observed. The value of ?r33 at a given applied magnetic bias field has been found to decrease with decreasing particle size.

  19. Gallium accumulation in early pulmonary Pneumocystis carinii infection

    SciTech Connect

    Stevens, D.A.; Allegra, J.C.

    1986-09-01

    The accumulation of gallium 67 citrate in pulmonary Pneumocystis carinii is well known. The sensitivity of gallium uptake in detecting early inflammatory processes, even when conventional roentgenograms are normal, would seem to make it possible in immunocompromised patients to make a presumptive diagnosis of this serious infection early in its course without using invasive techniques to demonstrate the organism. However, the presence of gallium uptake in radiation pneumonitis, pulmonary drug toxicity, and other processes that also occur in this group limit its usefulness. In our two patients--a young woman with Hodgkin's disease and an elderly woman with small cell lung cancer--this technique proved helpful. Although the latter patient was successfully treated empirically, such empiric treatment should be reserved for patients unable or unwilling to undergo invasive tests. Pulmonary gallium uptake in patients with respiratory symptoms, even with a normal chest film, should prompt attempts to directly demonstrate the organism.

  20. Neutron diffraction study of gallium nanostructured within a porous glass

    NASA Astrophysics Data System (ADS)

    Kibalin, Y. A.; Golosovsky, I. V.; Kumzerov, Y. A.; Pomjakushin, V. Y.; Bosak, A. A.; Parshin, P. P.

    2012-07-01

    Neutron diffraction studies of structure and atomic vibrations in gallium nanoparticles with the size of 13 nm embedded into a porous glass were performed. At crystallization of gallium, which at room temperature is in a liquid state, the texture effects were observed. The modeling of texture by generalized spherical harmonics allowed us to measure the temperature dependence of the mean-square displacement. It was shown that the contribution of acoustic vibrations in the phonon spectrum of conned gallium is dominant. The Debye temperature of nanostructured gallium appeared to be close to that for the bulk. The Grneisen constant was found to be strongly reduced with respect to the bulk, as well as the thermal expansion coefficient. It was demonstrated that texture affects physical properties, in particular, superconductivity through inner stresses.

  1. Gallium scanning in Paget's disease of bone: effect of calcitonin

    SciTech Connect

    Waxman, A.D.; McKee, D.; Siemsen, J.K.; Singer, F.R.

    1980-02-01

    Calcitonin has been used in the treatment of Paget's disease of bone, and serum alkaline phosphatase level and 24 hr urinary hydroxyproline excretion have been used to follow therapeutic response. The radionuclide bone scan has been used as a visual indicator; however, there is some uncertainty as to its value in following changes in disease activity. Four patients with both serial technetium phosphate bone scans and serial gallium studies were studied. In each case the beneficial effect of calcitonin was demonstrated more accurately with gallium than with technetium diphosphonate. Since biochemical changes in Paget's disease are believed to be mediated at the cellular level and gallium uptake depends on cellular activity, it is proposed that gallium uptake is more appropriate measure of the activity of Paget's disease than a noncellular marker such as a technetium-containing bone scan agent.

  2. Computer simulation of radiation damage in gallium arsenide

    NASA Technical Reports Server (NTRS)

    Stith, John J.; Davenport, James C.; Copeland, Randolph L.

    1989-01-01

    A version of the binary-collision simulation code MARLOWE was used to study the spatial characteristics of radiation damage in proton and electron irradiated gallium arsenide. Comparisons made with the experimental results proved to be encouraging.

  3. Preliminary Experimental Measurements for a Gallium Electromagnetic (GEM) Thruster

    NASA Technical Reports Server (NTRS)

    Thomas, Robert E.; Burton, Rodney L.; Glumac, Nick G.; Polzin, Kurt A.

    2007-01-01

    A low-energy gallium plasma source is used to perform a spatially and temporally broad spectroscopic survey in the 220-520 nm range. Neutral, singly, and doubly ionized gallium are present in a 20 J, 1.8 kA (peak) arc discharge operating with a central cathode. When the polarity of the inner electrode is reversed the discharge current and arc voltage waveforms remain similar. Utilizing a central anode configuration, multiple Ga lines are absent in the 270-340 nm range. In addition, neutral and singly ionized Fe spectral lines are present, indicating erosion of the outer electrode. With graphite present on the insulator to facilitate breakdown, line emission from the gallium species is further reduced and while emissions from singly and doubly ionized carbon atoms and molecular carbon (C2) radicals are observed. These data indicate that a significant fraction of energy is shifted from the gallium and deposited into the various carbon species.

  4. Gallium-69, 71 and nitrogen-14 nuclear magnetic resonance of amorphous gallium nitride

    NASA Astrophysics Data System (ADS)

    Schuster, David Michael

    This work reports results of nuclear magnetic resonance experiments on amorphous gallium nitride (a-GaN) made via room-temperature-MBE deposition on sapphire and aluminum-foil substrates. The amorphous gallium nitride made in this way has been compared with powdered-crystal GaN (px-GaN). The temperature dependence of spin-lattice relaxation time below room temperature was found to be similar, which indicates that the Debye temperature for a-GaN and crystal gallium nitride (x-GaN) may be similar. However, the actual spin-lattice relaxation times are much shorter in a-GaN. Several important distinctions between the materials are also clear. Amorphous gallium nitride has a very broad NMR lineshape, which has been determined to have been broadened by the second-order-quadrupole interaction and further inhomogenously broadened by chemical shifts. This work has also demonstrated that a-GaN's NMR signal results from the central transition of the I = 3/2 gallium nuclei. Using this information, estimates for the electric field gradients present in a-GaN have been obtained. A large distribution of EFG's has been inferred, including a significant fraction of sites experiencing EFG's much greater than those of single-crystal, hexagonal GaN. The spin-lattice relaxation times of a-GaN are two orders of magnitude shorter than those of x-GaN, and between one-fortieth and one-two-hundredth as long as T1's for px-GaN. This is likely due to the significance of local disorder modes (modeled as two-level systems) in the amorphous network, which provide more relaxation pathways than those available to the single-crystal sample. The spin-spin relaxation times of a-GaN have been found to be about 2/3 as long as those of px-GaN, possibly indicating that the disorder modes in a-GaN also play a role in the decay of transverse magnetization. An abundance of local disorder modes could explain the temperature dependence of the a-GaN lineshape and also its uniquely fast relaxation. These disorder modes may result from significant threefold coordination, which is predicted theoretically. The presence of threefold coordination can also explain the large range of EFG's observed in a-GaN.

  5. Electrical contacts to ion cleaned n-type gallium arsenide.

    NASA Technical Reports Server (NTRS)

    Walker, G. H.; Conway, E. J.

    1972-01-01

    The electrical current through silver contacts evaporated onto n-type gallium arsenide is reported as a function of surface treatment. Contacts to untreated gallium arsenide exhibit the expected high resistance. Surface cleaning by argon ion bombardment reduces the resistance by three orders of magnitude. The electrical resistance beyond 850 eV increases rapidly with ion bombardment energy. The resistance minimum at 850 eV is explained semiquantitatively in terms of a balance between cleaning and surface damage.

  6. Generator for ionic gallium-68 based on column chromatography

    DOEpatents

    Neirinckx, Rudi D.; Davis, Michael A.

    1981-01-01

    A physiologically acceptable solution of gallium-68 fluorides, having an activity of 0.1 to 50 millicuries per milliliter of solution is provided. The solution is obtained from a generator comprising germanium-68 hexafluoride bound to a column of an anion exchange resin which forms gallium-68 in situ by eluting the column with an acid solution to form a solution containing .sup.68 Ga-fluorides. The solution then is neutralized prior to administration.

  7. Complexometric determination of gallium with calcein blue as indicator

    USGS Publications Warehouse

    Elsheimer, H.N.

    1967-01-01

    A metalfluorechromic indicator, Calcein Blue, has been used for the back-titration of milligram amounts of EDTA in presence of gallium complexes. The indicator was used in conjunction with an ultraviolet titration assembly equipped with a cadmium sulphide detector cell and a microammeter for enhanced end-point detection. The result is a convenient and rapid method with an accuracy approaching 0.1 % and a relative standard deviation of about 0.4% for 10 mg of gallium. ?? 1967.

  8. Positive gallium-67 scintigraphy associated with pulmonary embolism

    SciTech Connect

    Brown, J.M.; Moreno, A.J.; Weisman, I.; Baker, F.J.; Lundy, M.N.; Brown, T.J.

    1983-08-01

    A 54-year-old man presenting with symptoms and signs of pulmonary embolism demonstrated gallium-67 accumulation within the right lower lung field in the region of a pulmonary embolism with effusion. An associated infectious process was ruled out. This is contrary to the usual clinical experience and identifies a potential pitfall in the use of gallium-67 as an aid in the differential diagnosis of pulmonary embolism and pneumonitis.

  9. Spectroscopy of alloying and low-pressure elements with the thermionic diode

    NASA Astrophysics Data System (ADS)

    Niemax, K.; Weber, K.-H.

    1985-04-01

    We describe a simple modification of the thermionic heat-pipe diode which allows to study spectroscopically alloying and low-pressure elements. The function and the potential of the modified diode is demonstrated by measuring Doppler-free two-photon lines in gallium, indium and thallium.

  10. Gallium arsenide solar array subsystem study

    NASA Technical Reports Server (NTRS)

    Miller, F. Q.

    1982-01-01

    The effects on life cycle costs of a number of technology areas are examined for a gallium arsenide space solar array. Four specific configurations were addressed: (1) a 250 KWe LEO mission - planer array; (2) a 250 KWe LEO mission - with concentration; (3) a 50 KWe GEO mission planer array; (4) a 50 KWe GEO mission - with concentration. For each configuration, a baseline system conceptual design was developed and the life cycle costs estimated in detail. The baseline system requirements and design technologies were then varied and their relationships to life cycle costs quantified. For example, the thermal characteristics of the baseline design are determined by the array materials and masses. The thermal characteristics in turn determine configuration, performance, and hence life cycle costs.

  11. Direct Band Gap Wurtzite Gallium Phosphide Nanowires

    PubMed Central

    2013-01-01

    The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594 nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength is tuned across an important range of the visible light spectrum (555690 nm). This approach of crystal structure engineering enables new pathways to tailor materials properties enhancing the functionality. PMID:23464761

  12. The Soviet-American Gallium Experiment (SAGE)

    SciTech Connect

    Garvey, G.T.

    1989-01-01

    It is a great pleasure for me to have been asked by Louis Rosen to tell you about the Soviet-American Gallium Experiment (SAGE). This undertaking is a multi-institutional collaboration among scientists from the Institute for Nuclear Research, Moscow (INR), Los Alamos National Laboratory (LANL), and several US universities. Its purpose is to measure the number of low-energy electron neutrinos emitted from the Sun that arrive at this planet. As such, it is an extremely important experiment, touching on fundamental physics issues as well as solar dynamics. In contrast to the strategic overviews, plans, and hopes for international collaboration presented earlier today, SAGE is an ongoing working effort with high hopes of producing the first measurement of the Sun's low-energy neutrino flux. This paper reviews this experiment. 3 refs., 3 figs.

  13. Cavity optomechanics in gallium phosphide microdisks

    SciTech Connect

    Mitchell, Matthew; Barclay, Paul E.; Hryciw, Aaron C.

    2014-04-07

    We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8??10{sup 5} and mode volumes <10(?/n){sup 3}, and study their nonlinear and optomechanical properties. For optical intensities up to 8.0??10{sup 4} intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5??m and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g{sub 0}/2??30?kHz for the fundamental mechanical radial breathing mode at 488?MHz.

  14. Rapid synthesis of gallium nitride powder

    NASA Astrophysics Data System (ADS)

    Wu, Huaqiang; Hunting, Janet; Uheda, Kyota; Lepak, Lori; Konkapaka, Phanikumar; DiSalvo, Francis J.; Spencer, Michael G.

    2005-06-01

    The synthesis of high purity, single-phase gallium nitride (GaN) powder has been achieved through the reaction between molten Ga and ammonia (NH 3) using Bi as a catalyst. In this simple apparatus, 25 g Ga can be fully, stoichiometrically converted into GaN within 5 h. The optimum temperature, NH 3 flow rate and reaction time in this hot wall tube furnace were 1000 C, 500 standard cubic centimeters per minute (sccm) and 5 h, respectively. The synthesized powder was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), glow discharge mass spectrometry (GDMS), Raman spectroscopy, and cathodoluminescence (CL). All of these techniques indicated high purity, hexagonal polycrystalline GaN with 1-20 ?m across plate like grains.

  15. Gallium Arsenide solar cell radiation damage experiment

    NASA Technical Reports Server (NTRS)

    Maurer, R. H.; Kinnison, J. D.; Herbert, G. A.; Meulenberg, A.

    1991-01-01

    Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment.

  16. Radiation damage of gallium arsenide production cells

    NASA Technical Reports Server (NTRS)

    Mardesich, N.; Garlick, G. F. J.

    1987-01-01

    High-efficiency gallium arsenide cells, made by the liquid epitaxy method (LPE), have been irradiated with 1-MeV electrons up to fluences of 10 to the 16th e/sq cm. Measurements have been made of cell spectral response and dark and light-excited current-voltage characteristics and analyzed using computer-based models to determine underlying parameters such as damage coefficients. It is possible to use spectral response to sort out damage effects in the different cell component layers. Damage coefficients are similar to other reported in the literature for the emitter and buffer (base). However, there is also a damage effect in the window layer and possibly at the window emitter interface similar to that found for proton-irradiated liquid-phase epitaxy-grown cells. Depletion layer recombination is found to be less than theoretically expected at high fluence.

  17. Graphene on gallium arsenide: Engineering the visibility

    NASA Astrophysics Data System (ADS)

    Friedemann, M.; Pierz, K.; Stosch, R.; Ahlers, F. J.

    2009-09-01

    Graphene consists of single or few layers of crystalline ordered carbon atoms. Its visibility on oxidized silicon (Si/SiO2) enabled its discovery and spawned numerous studies of its unique electronic properties. The combination of graphene with the equally unique electronic material gallium arsenide (GaAs) has up to now lacked such easy visibility. Here we demonstrate that a deliberately tailored GaAs-aluminum arsenide (AlAs) multilayer structure makes graphene just as visible on GaAs as on Si/SiO2. We show that standard microscope images of exfoliated graphite on GaAs/AlAs suffice to identify mono-, bi-, and multilayers of graphene. Raman data confirm our results.

  18. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    SciTech Connect

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  19. Role of the gallium scan in Hodgkin's disease

    SciTech Connect

    Hagemeister, F.B.; Fesus, S.M.; Lamki, L.M.; Haynie, T.P. )

    1990-03-01

    The reports of 240 gallium scans on 165 patients with Hodgkin's disease were reviewed to compare results with higher doses with those in earlier studies that employed lower doses. Tracer concentrations in specific sites were correlated with radiologic and pathologic reports and with the clinical courses of the patients studied. There were no significant differences in overall results between newer and older gallium scanning techniques. For untreated patients, the overall sensitivity was only 64%, but the overall specificity was 98%. For untreated patients and for patients with relapsing disease, the presence of gallium concentration in a specific site was highly predictive of active Hodgkin's disease at that site. However, for routine follow-up of treated patients, 95% of unsuspected relapses were missed by the scan, indicating the limited usefulness of negative scan results in this setting. For patients with residual abnormalities after therapy, demonstrated by other radiographic means, increased uptake of gallium in abdominal or peripheral lymph nodes also indicated active disease, although lack of uptake was reliable only in the mediastinum. Based on these results, it appears that the higher doses used in this study have not substantially improved the role of gallium scanning in this disease. Although it is potentially useful in providing confirmatory data at diagnosis or in patients with new or residual objective abnormalities after treatment, routine use of gallium scanning in Hodgkin's disease is not recommended.

  20. Method of fabricating germanium and gallium arsenide devices

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzban (inventor)

    1990-01-01

    A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

  1. Direct observation of frozen gallium gas on wurtzite gallium nitride (0001) using low-temperature scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Alam, Khan; Foley, Andrew; Lin, Wenzhi; Corbett, Joseph; Ma, Yingqiao; Pak, Jeongihm; Smith, Arthur

    2014-03-01

    Gallium nitride layers are ordinarily grown under gallium-rich growth conditions by molecular beam epitaxy (MBE) to obtain the highest material quality. In 1997, Smith et al. reported the family of reconstructions existing on the growth surface at room temperature, the highest-order being the c(6x12). Additional gallium deposition does not lead to new reconstructions. Instead, excess gallium atoms are presumed to exist in a 2-dimensional gas state. Using a custom-built MBE/low-temperature (4.2 K) STM system, we have imaged this gallium gas for the first time by freezing out the motion. The frozen-out gallium atoms are visualized as asymmetric `L-shaped' features, with left-handed and right-handed L's scattered randomly across the surface. Interestingly, on any given atomic terrace we observe a 4x greater probability of left-handed versus right-handed L's (or vice versa), which inverts across bilayer-height steps. The cause of this asymmetry is explored by zooming in with atomic resolution, revealing two inequivalent adsorption sites.

  2. Data in support of Gallium (Ga3+) antibacterial activities to counteract E. coli and S. epidermidis biofilm formation onto pro-osteointegrative titanium surfaces

    PubMed Central

    Cochis, A.; Azzimonti, B.; Sorrentino, R.; Della Valle, C.; De Giglio, E.; Bloise, N.; Visai, L.; Bruni, G.; Cometa, S.; Pezzoli, D.; Candiani, G.; Rimondini, L.; Chiesa, R.

    2016-01-01

    This paper contains original data supporting the antibacterial activities of Gallium (Ga3+)-doped pro-osteointegrative titanium alloys, obtained via Anodic Spark Deposition (ASD), as described in “The effect of silver or gallium doped titanium against the multidrug resistant Acinetobacter baumannii” (Cochis et al. 2016) [1]. In this article we included an indirect cytocompatibility evaluation towards Saos2 human osteoblasts and extended the microbial evaluation of the Ga3+ enriched titanium surfaces against the biofilm former Escherichia coli and Staphylococcus epidermidis strains. Cell viability was assayed by the Alamar Blue test, while bacterial viability was evaluated by the metabolic colorimetric 3-[4,5-dimethylthiazol-2-yl]-2,5 diphenyl tetrazolium bromide (MTT) assay. Finally biofilm morphology was analyzed by Scanning Electron Microscopy (SEM). Data regarding Ga3+ activity were compared to Silver. PMID:26909385

  3. Data in support of Gallium (Ga(3+)) antibacterial activities to counteract E. coli and S. epidermidis biofilm formation onto pro-osteointegrative titanium surfaces.

    PubMed

    Cochis, A; Azzimonti, B; Sorrentino, R; Della Valle, C; De Giglio, E; Bloise, N; Visai, L; Bruni, G; Cometa, S; Pezzoli, D; Candiani, G; Rimondini, L; Chiesa, R

    2016-03-01

    This paper contains original data supporting the antibacterial activities of Gallium (Ga(3+))-doped pro-osteointegrative titanium alloys, obtained via Anodic Spark Deposition (ASD), as described in "The effect of silver or gallium doped titanium against the multidrug resistant Acinetobacter baumannii" (Cochis et al. 2016) [1]. In this article we included an indirect cytocompatibility evaluation towards Saos2 human osteoblasts and extended the microbial evaluation of the Ga(3+) enriched titanium surfaces against the biofilm former Escherichia coli and Staphylococcus epidermidis strains. Cell viability was assayed by the Alamar Blue test, while bacterial viability was evaluated by the metabolic colorimetric 3-[4,5-dimethylthiazol-2-yl]-2,5 diphenyl tetrazolium bromide (MTT) assay. Finally biofilm morphology was analyzed by Scanning Electron Microscopy (SEM). Data regarding Ga(3+) activity were compared to Silver. PMID:26909385

  4. Gallium Potentiates the Antibacterial Effect of Gentamicin against Francisella tularensis.

    PubMed

    Lindgren, Helena; Sjstedt, Anders

    2015-01-01

    The reasons why aminoglycosides are bactericidal have not been not fully elucidated, and evidence indicates that the cidal effects are at least partly dependent on iron. We demonstrate that availability of iron markedly affects the susceptibility of the facultative intracellular bacterium Francisella tularensis strain SCHU S4 to the aminoglycoside gentamicin. Specifically, the intracellular depots of iron were inversely correlated to gentamicin susceptibility, whereas the extracellular iron concentrations were directly correlated to the susceptibility. Further proof of the intimate link between iron availability and antibiotic susceptibility were the findings that a ?fslA mutant, which is defective for siderophore-dependent uptake of ferric iron, showed enhanced gentamicin susceptibility and that a ?feoB mutant, which is defective for uptake of ferrous iron, displayed complete growth arrest in the presence of gentamicin. Based on the aforementioned findings, it was hypothesized that gallium could potentiate the effect of gentamicin, since gallium is sequestered by iron uptake systems. The ferrozine assay demonstrated that the presence of gallium inhibited >70% of the iron uptake. Addition of gentamicin and/or gallium to infected bone marrow-derived macrophages showed that both 100 ?M gallium and 10 ?g/ml of gentamicin inhibited intracellular growth of SCHU S4 and that the combined treatment acted synergistically. Moreover, treatment of F. tularensis-infected mice with gentamicin and gallium showed an additive effect. Collectively, the data demonstrate that SCHU S4 is dependent on iron to minimize the effects of gentamicin and that gallium, by inhibiting the iron uptake, potentiates the bactericidal effect of gentamicin in vitro and in vivo. PMID:26503658

  5. Application of ultrasound in solvent extraction of nickel and gallium

    SciTech Connect

    Pesic, B.

    1996-07-01

    The effects of ultrasound on the rate of solvent extraction of nickel with Lix 65N and Lix 70, and gallium with Kelex 100 were investigated. These solvent extraction systems are noted by their sluggish nature. Low frequency (20 kHz) ultrasound increased the rates of extraction of nickel by factors of four to seven. The ultrasound had no effect on the final chemical equilibrium. Gallium extraction rates were enhanced with the use of ultrasound by as much as a factor of 15. Again, the ultrasound had no effect on extraction equilibrium. For both nickel and gallium, the enhanced rates were attributed to increased interfacial surface area associated with ultrasonically induced cavitation and microdroplet formation. The stability of the microdroplets permitted intermittent application of ultrasound with corresponding decreases in ultrasonic energy requirements. The lowest energy consumption was observed with short (0.25 to 5 s) bursts of high power (41 to 61 W) ultrasonic inputs. The study also provided insight into the factors that affect the complex extraction of gallium from sodium aluminate solutions. The rate controlling step was found to be the dehydration of the gallate ion, Ga(OH)4, and the first complex formation between gallium and Kelex 100. Sodium was found to enhance the extraction rate up to a point, beyond which increased concentration was detrimental. Increasing aluminum concentration was found to slow extraction rates. Modifiers and diluents were shown to markedly affect extraction rates even without ultrasound. Ketone modifiers, particularly 2-undecanone, when used with Kermac 470B or Escaid 200 diluents enhanced extraction rates of gallium to the point that the use of ultrasound provided no additional benefits. The positive effects of ketone modifiers for the solvent extraction of gallium had not been previously reported.

  6. Alloy materials

    DOEpatents

    Hans Thieme, Cornelis Leo; Thompson, Elliott D.; Fritzemeier, Leslie G.; Cameron, Robert D.; Siegal, Edward J.

    2002-01-01

    An alloy that contains at least two metals and can be used as a substrate for a superconductor is disclosed. The alloy can contain an oxide former. The alloy can have a biaxial or cube texture. The substrate can be used in a multilayer superconductor, which can further include one or more buffer layers disposed between the substrate and the superconductor material. The alloys can be made a by process that involves first rolling the alloy then annealing the alloy. A relatively large volume percentage of the alloy can be formed of grains having a biaxial or cube texture.

  7. Gallium a unique anti-resorptive agent in bone: Preclinical studies on its mechanisms of action

    SciTech Connect

    Bockman, R.; Adelman, R.; Donnelly, R.; Brody, L.; Warrell, R. ); Jones, K.W. )

    1990-01-01

    The discovery of gallium as a new and unique agent for the treatment of metabolic bone disorders was in part fortuitous. Gallium is an exciting new therapeutic agent for the treatment of pathologic states characterized by accelerated bone resorption. Compared to other therapeutic metal compounds containing platinum or germanium, gallium affects its antiresorptive action without any evidence of a cytotoxic effect on bone cells. Gallium is unique amongst all therapeutically available antiresorptive agents in that it favors bone formation. 18 refs., 1 fig.

  8. Gallium based low-interaction anions

    DOEpatents

    King, Wayne A.; Kubas, Gregory J.

    2000-01-01

    The present invention provides: a composition of the formula M.sup.+x (Ga(Y).sub.4.sup.-).sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; a composition of the formula (R).sub.x Q.sup.+ Ga(Y).sub.4.sup.- where Q is selected from the group consisting of carbon, nitrogen, sulfur, phosphorus and oxygen, each R is a ligand selected from the group consisting of alkyl, aryl, and hydrogen, x is an integer selected from the group consisting of 3 and 4 depending upon Q, and each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; an ionic polymerization catalyst composition including an active cationic portion and a gallium based weakly coordinating anion; and bridged anion species of the formula M.sup.+x.sub.y [X(Ga(Y.sub.3).sub.z ].sup.-y.sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, magnesium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, X is a bridging group between two gallium atoms, y is an integer selected from the group consisting 1 and 2, z is an integer of at least 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide.

  9. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  10. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  11. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  12. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  13. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  14. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOEpatents

    Hogan, S.J.

    1983-03-13

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  15. Pure silver ohmic contacts to N- and P- type gallium arsenide materials

    DOEpatents

    Hogan, Stephen J. (Golden, CO)

    1986-01-01

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

  16. Determination of gallium in an iron-aluminium matrix by solvent extraction and flame emission spectroscopy.

    PubMed

    Cresser, M S; Torrent-Castellet, J

    1972-11-01

    Solvent extraction of gallium(III) into methyl isobutyl ketone from hydrochloric acid solutions containing titanium (III) sulphate provides a rapid method for separation of gallium from an iron/aluminium matrix and may be employed to eliminate the interference of these elements in the flame emission spectrometric determination of gallium. PMID:18961209

  17. Gallium scintigraphy in a case of septic cavernous sinus thrombosis

    SciTech Connect

    Palestro, C.J.; Malat, J.; Gladstone, A.G.; Richman, A.H.

    1986-09-01

    Septic cavernous sinus thrombosis, a relatively uncommon disease entity, frequently can be fatal. Early diagnosis is imperative in order that appropriate treatment be instituted. A 59-year-old woman who was admitted to our institution with complaints of diplopia, blurred vision and fevers that developed following a tooth extraction is presented. Initial CT and lumbar puncture on the day of admission were totally normal. A repeat CT performed 48 hours after admission, on the same day as gallium imaging, demonstrated findings consistent with cavernous sinus thrombosis. Gallium imaging demonstrated intense uptake in the left cavernous sinus and left orbit as well as moderately increased activity in the right cavernous sinus and orbit, confirming infection. The patient was treated with antibiotics, and repeat CT and gallium imaging were performed ten days later, both of which demonstrated near total resolution of the disease process. Conceivably, if gallium imaging had been initiated on the day of admission it may have been the first study to demonstrate an infectious process in the cavernous sinus. Gallium imaging should be considered as a diagnostic tool in the noninvasive workup of this entity.

  18. Electrolytic recovery of gallium from dilute solutions employing microelectrodes

    SciTech Connect

    Cahen, G.L.; Gileadi, E.; Paciej, R.C.; Stoner, G.E.

    1985-06-01

    The recovery of gallium from dilute solutions is known to be slow and inefficient due to competing hydrogen evolution and the limitations of mass transport. Methods used to improve the process include pulse plating, inhibition of hydrogen evolution by suitable additives, increasing the pH, and conducting the process at temperatures above the melting point of gallium. In the present work, an alternative approach was taken employing microelectrodes to enhance the rate of mass transport and thus to increase the rate of gallium recovery. Potentiostatic plating and stripping experiments were performed using electrodes ranging in diameter from 1 cm down to 45 ..mu..m. The effect of electrode diameter on the rate and efficiency of the plating of gallium was studied at different potentials and under different conditions of mass transport. The effect of plating time was also determined, and the conditions for the optimum recovery of gallium in terms of the overall rate as well as the current efficiency were evaluated. Carbon fiber epoxy composites can serve as ensembles of microelectrodes. It was shown that, with a typical radius of 3-5 ..mu..m for the individual fibers, considerable enhancement of the rate of recovery of metals from dilute solutions can be expected.

  19. Preliminary Spectroscopic Measurements for a Gallium Electromagnetic (GEM) Thruster

    NASA Technical Reports Server (NTRS)

    Thomas, Robert E.; Burton, Rodney L.; Glumac, Nick G.; Polzin, Kurt A.

    2007-01-01

    As a propellant option for electromagnetic thrusters, liquid ,gallium appears to have several advantages relative to other propellants. The merits of using gallium in an electromagnetic thruster (EMT) are discussed and estimates of discharge current levels and mass flow rates yielding efficient operation are given. The gallium atomic weight of 70 predicts high efficiency in the 1500-2000 s specific impulse range, making it ideal for higher-thrust, near-Earth missions. A spatially and temporally broad spectroscopic survey in the 220-520 nm range is used to determine which species are present in the plasma and estimate electron temperature. The spectra show that neutral, singly, and doubly ionized gallium species are present in a 20 J, 1.8 kA (peak) are discharge. With graphite present on the insulator to facilitate breakdown, singly and doubly ionized carbon atoms are also present, and emission is observed from molecular carbon (CZ) radicals. A determination of the electron temperature was attempted using relative emission line data, and while the spatially and temporally averaged, spectra don't fit well to single temperatures, the data and presence of doubly ionized gallium are consistent with distributions in the 1-3 eV range.

  20. Investigation on gallium ions impacting monolayer graphene

    NASA Astrophysics Data System (ADS)

    Wu, Xin; Zhao, Haiyan; Yan, Dong; Pei, Jiayun

    2015-06-01

    In this paper, the physical phenomena of gallium (Ga+) ion impacting monolayer graphene in the nanosculpting process are investigated experimentally, and the mechanisms are explained by using Monte Carlo (MC) and molecular dynamics (MD) simulations. Firstly, the MC method is employed to clarify the phenomena happened to the monolayer graphene target under Ga+ ion irradiation. It is found that substrate has strong influence on the damage mode of graphene. The mean sputtering yield of graphene under 30 keV Ga+ ion irradiation is 1.77 and the least ion dose to completely remove carbon atoms in graphene is 21.6 ion/nm2. Afterwards, the focused ion beam over 21.6 ion/nm2 is used for the irradiation on a monolayer graphene supported by SiO2 experimentally, resulting in the nanostructures, i.e., nanodot and nanowire array on the graphene. The performances of the nanostructures are characterized by atomic force microscopy and Raman spectrum. A plasma plume shielding model is put forward to explain the nanosculpting results of graphene under different irradiation parameters. In addition, two damage mechanisms are found existing in the fabrication process of the nanostructures by using empirical MD simulations. The results can help us open the possibilities for better control of nanocarbon devices.

  1. Hydrogen in Gallium Nitride Grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Ambacher, O.; Angerer, H.; Dimitrov, R.; Rieger, W.; Stutzmann, M.; Dollinger, G.; Bergmaier, A.

    1997-01-01

    The role of hydrogen in gallium nitride was studied on thin films of GaN on sapphire prepared at substrate temperatures in the range of 600 to 1100 °C. By using triethylgallium and ammonia as precursor and hydrogen and/or nitrogen as transport gases, we have observed a strong influence of molecular hydrogen on the deposition rate and the structural properties of epitaxial GaN. By elastic recoil detection analysis and thermal desorption measurements we were able to determine the total concentration of nitrogen, hydrogen and carbon in the bulk material. Isotope substitution of hydrogen by deuterium in the H2 carrier gas did not give rise to a noticeable deuterium incorporation, showing that the sources for hydrogen are the metalorganic precursor, ammonia or reaction products of both. Once incorporated, thermally activated hydrogen effusion from n-type GaN occurs with an activation energy of more than 3.9 eV. With the help of mass spectrometry we established hydrogen effusion from heavily magnesium-doped (2 at%) GaN at temperatures between 600 and 700 °C, which is the temperature range used for acceptor activation.

  2. Gallium nitride micromechanical resonators for IR detection

    NASA Astrophysics Data System (ADS)

    Rais-Zadeh, Mina

    2012-06-01

    This paper reports on a novel technology for low-noise un-cooled detection of infrared (IR) radiation using a combination of piezoelectric, pyroelectric, electrostrictive, and resonant effects. The architecture consists of a parallel array of high-Q gallium nitride (GaN) micro-mechanical resonators coated with an IR absorbing nanocomposite. The nanocomposite absorber converts the IR energy into heat with high efficiency. The generated heat causes a shift in frequency characteristics of the GaN resonators because of pyroelectric effect. IR detection is achieved by sensing the shift in the resonance frequency and amplitude of the exposed GaN resonator as compared to a reference resonator that is included in the array. This architecture offers improved signal to noise ratio compared with conventional pyroelectric detectors as the resonant effect reduces the background noise and improves sensitivity, enabling IR detection with NEDTs below 5 mK at room temperature. GaN is chosen as the resonant material as it possesses high pyroelectric, electrostrictive, and piezoelectric coefficients and can be grown on silicon substrates for low-cost batch fabrication. Measured results of a GaN IR detector prototype and a thin-film nanocomposite IR absorber are presented in this paper.

  3. Gallium nitride photocathode development for imaging detectors

    NASA Astrophysics Data System (ADS)

    Siegmund, Oswald H. W.; Tremsin, Anton S.; Vallerga, John V.; McPhate, Jason B.; Hull, Jeffrey S.; Malloy, James; Dabiran, Amir M.

    2008-07-01

    Recent progress in Gallium Nitride (GaN, AlGaN, InGaN) photocathodes show great promise for future detector applications in Astrophysical instruments. Efforts with opaque GaN photocathodes have yielded quantum efficiencies up to 70% at 120 nm and cutoffs at ~380 nm, with low out of band response, and high stability. Previous work with semitransparent GaN photocathodes produced relatively low quantum efficiencies in transmission mode (4%). We now have preliminary data showing that quantum efficiency improvements of a factor of 5 can be achieved. We have also performed two dimensional photon counting imaging with 25mm diameter semitransparent GaN photocathodes in close proximity to a microchannel plate stack and a cross delay line readout. The imaging performance achieves spatial resolution of ~50?m with low intrinsic background (below 1 event sec-1 cm-2) and reasonable image uniformity. GaN photocathodes with significant quantum efficiency have been fabricated on ceramic MCP substrates. In addition GaN has been deposited at low temperature onto quartz substrates, also achieving substantial quantum efficiency.

  4. Gallium Nitride Based Logpile Photonic Crystal

    SciTech Connect

    Subramania, Ganapathi; Li, Qiming; Lee, Yun-Ju; Figiel, Jeffrey J.; Wang, George T.; Fischer, Arthur J.

    2011-11-09

    A nine-layer logpile three-dimensional photonic crystal (3DPC) is demonstrated composed of single crystalline gallium nitride (GaN) nanorods, ~ 100 nm in size with lattice constants of 260, 280, and 300 nm with photonic band gap in the visible region. This unique GaN structure is created through a combined approach of a layer-by-layer template fabrication technique and selective metal organic chemical vapor deposition (MOCVD). These GaN 3DPC exhibit a stacking direction band gap characterized by strong optical reflectance between 380 and 500 nm. By introducing a ''line-defect'' cavity in the fifth (middle) layer of the 3DPC, a localized transmission mode with a quality factor of 25–30 is also observed within the photonic band gap. The realization of a group III nitride 3DPC with uniform features and a band gap at wavelengths in the visible region is an important step toward realizing complete control of the electromagnetic environment for group III nitride-based optoelectronic devices.

  5. Gallium nitride based logpile photonic crystals.

    PubMed

    Subramania, Ganapathi; Li, Qiming; Lee, Yun-Ju; Figiel, Jeffrey J; Wang, George T; Fischer, Arthur J

    2011-11-01

    We demonstrate a nine-layer logpile three-dimensional photonic crystal (3DPC) composed of single crystalline gallium nitride (GaN) nanorods, ∼100 nm in size with lattice constants of 260, 280, and 300 nm with photonic band gap in the visible region. This unique GaN structure is created through a combined approach of a layer-by-layer template fabrication technique and selective metal organic chemical vapor deposition (MOCVD). These GaN 3DPC exhibit a stacking direction band gap characterized by strong optical reflectance between 380 and 500 nm. By introducing a "line-defect" cavity in the fifth (middle) layer of the 3DPC, a localized transmission mode with a quality factor of 25-30 is also observed within the photonic band gap. The realization of a group III nitride 3DPC with uniform features and a band gap at wavelengths in the visible region is an important step toward realizing complete control of the electromagnetic environment for group III nitride based optoelectronic devices. PMID:21970551

  6. Radiation induced carbon complexes in gallium arsenide

    NASA Astrophysics Data System (ADS)

    Carlone, Cosmo; Rejeb, Chedly; Jorio, Anouar; Parenteau, Martin; Khanna, Shyam M.

    1994-05-01

    Gallium arsenide grown by the metallorganic chemical vapour deposition method and n-doped to various silicon concentrations was irradiated with reactor neutrons (1 MeV equivalent damage in silicon) in the fluence range 0 to 3 10 15 cm -2. Native defects, including carbon which is a residual impurity of the growth method, and those introduced by irradiation, were characterized by photoluminescence (PL) and deep level transient spectroscopy (DLTS). In some samples with fixed doping value, the PL intensity of all the transitions, including that to the carbon impurity increases at low fluence levels before decreasing at high fluence. At higher fluences, the transition to the carbon impurity goes through other maxima. The carbon PL intensity versus fluence curve depends on initial doping. DLTS results reveal the removal of a trap EL12 at low fluences, but the introduction of other traps at higher fluences. The defect introduction rates depend on fluence. We attribute the variation in the carbon PL intensity to an interaction between the defects introduced by the irradiation and the carbon impurity.

  7. Energy deposition in gallium arsenide. Final report

    SciTech Connect

    McNulty, P.J.

    1985-11-12

    This report pertains to the single-event-upset phenomena in microelectronic circuits with emphasis on those resulting from nuclear reactions induced by energetic protons. The goal is to understand the detailed physical mechanisms leading to SEUs sufficiently to put calculating SEUs on a sound quantitative basis. The author previously had considerable success in predicting the charge generation in well defined slabs of silicon. The purpose of this contract was to try extending the model and the associated simulation codes to GaAs and to begin the experimental measurements necessary to test them. The Clarkson Nuclear Reaction models were modified to handle proton-induced nuclear reactions in gallium arsenide. The codes were immediately useful in analyzing the significance that the edge-effect phenomena, discovered in microbeam studies of GaAs gates, would play in increasing the SEU rates for GaAs memories. Techniques were developed using these codes for calculating SEU rates for select circuits flown in space. Two of these circuits, the 2901B and the 93L422, are responsible for SEU problems aboard US satellites. Charge-collection Measurements were carried out using the GaAs Fat-FET test structures from the Rockwell memories.

  8. Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment.

    PubMed

    Vasquez, M R; Flauta, R E; Wada, M

    2008-02-01

    Monte Carlo simulations were conducted to study the formation of gallium-nitride (GaN) layer on liquid gallium (Ga) sputtering target immersed in nitrogen (N(2)) plasma. In the simulation model, N ions were assumed to possess energy equal to the bias voltage applied to the sputtering target with respect to the plasma. The results showed the surface morphology of GaN changed from a relatively smooth GaN on Ga surface at 50 eV N ion energy to a rough surface with GaN dendrites on liquid Ga at 500 eV ion energy. Further increase in N ion energy up to 1 keV resulted in smaller density of GaN dendrites on surface. Increasing surface coverage of Ga by GaN substantially reduced the sputtering yield of Ga from the target. These simulation results were correlated with previously reported experimental observations on liquid Ga surface immersed in the nitrogen plasma of a plasma-sputter-type ion source. PMID:18315225

  9. Gallium plasmonics: deep subwavelength spectroscopic imaging of single and interacting gallium nanoparticles.

    PubMed

    Knight, Mark W; Coenen, Toon; Yang, Yang; Brenny, Benjamin J M; Losurdo, Maria; Brown, April S; Everitt, Henry O; Polman, Albert

    2015-02-24

    Gallium has recently been demonstrated as a phase-change plasmonic material offering UV tunability, facile synthesis, and a remarkable stability due to its thin, self-terminating native oxide. However, the dense irregular nanoparticle (NP) ensembles fabricated by molecular-beam epitaxy make optical measurements of individual particles challenging. Here we employ hyperspectral cathodoluminescence (CL) microscopy to characterize the response of single Ga NPs of various sizes within an irregular ensemble by spatially and spectrally resolving both in-plane and out-of-plane plasmonic modes. These modes, which include hybridized dipolar and higher-order terms due to phase retardation and substrate interactions, are correlated with finite difference time domain (FDTD) electrodynamics calculations that consider the Ga NP contact angle, substrate, and native Ga/Si surface oxidation. This study experimentally confirms previous theoretical predictions of plasmonic size-tunability in single Ga NPs and demonstrates that the plasmonic modes of interacting Ga nanoparticles can hybridize to produce strong hot spots in the ultraviolet. The controlled, robust UV plasmonic resonances of gallium nanoparticles are applicable to energy- and phase-specific applications such as optical memory, environmental remediation, and simultaneous fluorescence and surface-enhanced Raman spectroscopies. PMID:25629392

  10. Photoluminescence study of gallium vacancy defects in gallium arsenide irradiated by relativistic protons

    SciTech Connect

    Carlone, C.; Parenteau, M.; Houdayer, A.; Hinrichsen, P.; Vincent, J.

    1997-12-01

    Epitaxially grown n-type gallium arsenide films, doped with silicon to concentrations of 2 {times} 10{sup 15} and 2 {times} 10{sup 16} cm{sup {minus}3} were exposed at room temperature to 200, 350, and 500 MeV proton irradiation at fluences of 3 {times} 10{sup 11}, 10{sup 12}, 10{sup 13}, 3 {times} 10{sup 13}, 10{sup 14} and 10{sup 15} cm{sup {minus}2}. The effects of the irradiation were determined through low temperature continuous photoluminescence spectroscopy. Two radiation-induced donor-to-acceptor transitions were observed. The one at 1.476 eV has been associated to the gallium vacancy acceptor (V{sub Ga}) and the other at 1.482 eV to the silicon at the arsenic site acceptor (Si{sub As}). The relative introduction rate of these two defects has been measured in the irradiated samples before and after annealing at 550 C for 30 minutes. The introduction rates are higher than those predicted by relativistic elastic scattering cross-section theory in the energy range studied here. The authors conclude that inelastic scattering contributes to the cross-section. The introduction rates are lower than nonionizing energy loss (NIEL) calculations in the 200 to 500 MeV energy range. They suggest that the proton inelastic scattering parameter used in NIEL needs revision. The relativistic inelastic scattering formula is closer to experiment than present NIEL calculations.

  11. Determination of tin, bismuth, antimony, indium, gallium and arsenic by solvent extraction cum atomic absorption spectrophotometry.

    PubMed

    Venkaji, K; Naidu, P P; Rao, T J

    1994-08-01

    A rapid atomic absorption spectrometric method for the determination of tin, antimony, bismuth, indium, gallium and arsenic in geological materials, steels and alloys is described. The samples are fused with sodium peroxide (for geological samples such as cassiterite and sulphides) or decomposed with sulphuric/hydrochloric acid mixture or by alkaline fusion (for silicates or bauxites) or by acid treatment (for steels, alloys and certain geological samples). The elements of interest are extracted as their iodides into methyl isobutyl ketone, stripped into aqueous solution by treatment with benzene, concentrated nitric acid and water, and determined by flame atomic-absorption spectrometry. Detailed study is made on stripping of the metals from organic phase as there no simple and rapid stripping procedures available. The method allows the determination of Sn, Sb, Bi and In down to 2 ppm and Ga down to 5 ppm. The relative standard deviations range up to 10% with an average of 2.5%. Apparent recoveries of these metals range from 90 to 110 with an average of 95% for Sb and 99% for others. PMID:18966069

  12. Vertical gradient freezing of doped gallium antimonide semiconductor crystals using submerged heater growth and electromagnetic stirring

    NASA Astrophysics Data System (ADS)

    Ma, Nancy; Bliss, David F.; Iseler, Gerald W.

    2003-11-01

    An investigation of the melt growth of uniformly doped gallium-antimonide (GaSb) semiconductor crystals as well as other III-V alloy crystals with uniform composition are underway at the US Air Force Research Laboratory at Hanscom Air Force Base by the vertical gradient freeze (VGF) method utilizing a submerged heater. Stirring can be induced in the GaSb melt just above the crystal growth interface by applying a small radial electric current in the liquid together with an axial magnetic field. The transport of any dopant and/or alloy component by the stirring can promote better melt homogeneity and allow for more rapid growth rates before the onset of constitutional supercooling. This paper presents a numerical model for the unsteady transport of a dopant during the VGF process by submerged heater growth with a steady axial magnetic field and a steady radial electric current. As the strength of the electromagnetic (EM) stirring increases, the convective dopant transport increases, the dopant transport in the melt reaches a steady state at an earlier time during growth, and the top of the crystal which has solidified after a steady state has been achieved exhibits axial dopant homogeneity. For crystal growth with stronger EM stirring, the crystal exhibits less radial segregation and the axially homogeneous section of the crystal is longer. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.

  13. The Soviet-American gallium experiment at Baksan

    SciTech Connect

    Abazov, A. I.; Abdurashitov, D. N.; Anosov, O. L.; Danshin, S. N.; Eroshkina, L. A.; Faizov, E. L.; Gavrin, V. N.; Kalikhov, A. V.; Knodel, T. V.; Knyshenko, I. I.; Kornoukhov, V. N.; Mezentseva, S. A.; Mirmov, I. N.; Ostrinsky, A. I.; Petukhov, V. V; Pshukov, A. M.; Revzin, N. Ye; Shikhin, A. A.; Slyusareva, Ye. D.; Timofeyev, P. V.; Veretenkin, E. P.; Vermul, V. M.; Yantz, V. E.; Zakharov, Yu.; Zatsepin, G. T.; Zhandarov, V. I.

    1990-01-01

    A gallium solar neutrino detector is sensitive to the full range of the solar neutrino spectrum, including the low-energy neutrinos from the fundamental proton-proton fusion reaction. If neutrino oscillations in the solar interior are responsible for the suppressed {sup 8}B flux measured by the Homestake {sup 37}Cl experiment and the Kamiokande water Cherenkov detector, then a comparison of the gallium, chlorine, and water results may make possible a determination of the neutrino mass difference and mixing angle. A 30-ton gallium detector is currently operating in the Baksan laboratory in the Soviet Union, with a ratio of expected solar signal to measured background (during the first one to two {sup 71}Ge half lives) of approximately one. 28 refs.

  14. Effect of bronchoscopy on localization of gallium-67 citrate

    SciTech Connect

    Phillips, B.A.; Cooper, K.R.; Fratkin, M.J.

    1983-03-01

    Bronchoscopy, bronchoalveolar lavage (BAL), and 67Ga lung scans are frequently performed for diagnosis or follow-up of patients with sarcoidosis, interstitial pneumonitis, lymphoma, infections, and bronchogenic carcinoma. Because many patients undergo all 3 of these procedures, it is important to determine what effects bronchoscopy and/or BAL may have on gallium imaging. Because 67Ga accumulates in neutrophils at the site of an inflammatory lesion as well as in those circulating in the vascular compartment, it seems reasonable to postulate that bronchoscopy could cause migration of labeled neutrophils into the lung, resulting in false positive gallium scans. To test this hypothesis, we studied 5 patients with varying chronologic relationships of 67Ga injection, gallium scanning, and bronchoscopy with BAL. In all patients, the repeat 67Ga lung scans remained normal or showed no change after bronchoscopy and BAL. We conclude that bronchoscopy with or without BAL does not cause increased 67Ga uptake by the lung.

  15. Dry process for recovering gallium from weapons plutonium using a rotary furnace equipped with a copper collector

    NASA Astrophysics Data System (ADS)

    Philip, C. V.; Anthony, Rayford G.; Shivraj, Chokkaram; Philip, Elizabeth; Pitt, W. Wilson; Roundhill, Max; Beard, Carl

    2000-07-01

    Currently the separation of gallium from weapons plutonium is achieved using complex aqueous processing involving solvent extraction and ion exchange; this process generates large quantities of wastewater containing radioactive materials. At Los Alamos National Laboratory, researchers have been developing a simpler alternative process referred to as the thermally induced gallium removal (TIGR) process; vaporized gallium suboxide is swept away by passing hydrogen/argon over gallium trioxide/plutonium oxide heated at 1100 C or higher. During the TIGR process some of the gallium suboxide prematurely decomposes to gallium metal and gallium trioxide, which deposit on furnace and vent surfaces.

  16. Interaction of a Liquid Gallium Jet with ISTTOK Edge Plasmas

    NASA Astrophysics Data System (ADS)

    Gomes, R. B.; Fernandes, H.; Silva, C.; Sarakovskis, A.; Pereira, T.; Figueiredo, J.; Carvalho, B.; Soares, A.; Duarte, P.; Varandas, C.; Lielausis, O.; Klyukin, A.; Platacis, E.; Tale, I.

    2008-04-01

    The use of liquid metals as plasma facing components in tokamaks has recently experienced a renewed interest stimulated by their advantages in the development of a fusion reactor. Liquid metals have been proposed to solve problems related to the erosion and neutronic activation of solid walls submitted to high power loads allowing an efficient heat exhaust from fusion devices. Presently the most promising candidate materials are lithium and gallium. However, lithium has a short liquid state range when compared, for example, with gallium that has essentially better thermal properties and lower vapor pressure. To explore further these properties, ISTTOK tokamak is being used to test the interaction of a free flying, fully formed liquid gallium jet with the plasma. The interacting, 2.3 mm diameter, jet is generated by hydrostatic pressure and has a 2.5 m/s flow velocity. The liquid metal injector has been build to allow the positioning of the jet inside the tokamak chamber, within a 13 mm range. This paper presents the first obtained experimental results concerning the liquid gallium jet-plasma interaction. A stable jet has been obtained, which was not noticeably affected by the magnetic field transients. ISTTOK has been successfully operated with the gallium jet without degradation of the discharge or a significant plasma contamination by liquid metal. This observation is supported by spectroscopic measurements showing that gallium radiation is limited to the region around the jet. Furthermore, the power deposited on the jet has been evaluated at different radial locations and the surface temperature increase estimated.

  17. Extremely-efficient, miniaturized, long-lived alpha-voltaic power source using liquid gallium

    NASA Technical Reports Server (NTRS)

    Snyder, G. Jeffrey (Inventor); Patel, Jagdishbhai (Inventor); Fleurial, Jean-Pierre (Inventor)

    2004-01-01

    A power source converts .alpha.-particle energy to electricity for use in electrical systems. Liquid gallium or other liquid medium is subjected to .alpha.-particle emissions. Electrons are freed by collision from neutral gallium atoms to provide gallium ions. The electrons migrate to a cathode while the gallium ions migrate to an anode. A current and/or voltage difference then arises between the cathode and anode because of the work function difference of the cathode and anode. Gallium atoms are regenerated by the receiving of electrons from the anode enabling the generation of additional electrons from additional .alpha.-particle collisions.

  18. Absence of gallium-67 avidity in diffuse pulmonary calcification

    SciTech Connect

    Lecklitner, M.L.; Foster, R.W.

    1985-09-01

    Diffuse pulmonary uptake by bone-seeking radiopharmaceuticals has been reported previously but, in the same patient, would pulmonary uptake of Ga-67 citrate yield clinically meaningful results. A patient with hypercalcemia and renal failure in whom bone scintigraphy demonstrated striking diffuse bilateral pulmonary uptake, but subsequent gallium imaging demonstrated no evidence of pulmonary uptake greater than body background, is discussed. We conclude that pulmonary uptake of gallium cannot be attributed to calcium deposition and should carry the same clinical significance in regard to inflammatory and malignant lesions as would be assigned to patients without pulmonary calcific deposits.

  19. Multiplane gallium tomography in assessment of occupational chest diseases

    SciTech Connect

    Cordasco, E.M.; O'Donnell, J.; MacIntyre, W.; Demeter, S.; Gonzalez, L.; Eren, M.; McMahon, W.; Burns, D.; Feiglin, D.H. )

    1990-01-01

    Gallium-67 scintigraphy is helpful in the evaluation of inflammatory, respiratory diseases. Single-photon emission computed tomography (SPECT) provides three-dimensional tomographic reconstruction of radioisotope distribution in the body. The addition of SPECT to gallium-67 scanning in 27 patients demonstrated an improvement in the sensitivity for detecting the presence and extent of interstitial occupational lung disease. This technique may provide earlier detection of parenchymal lung changes than can the chest x-ray and planar scanning in some patients with asbestosis. Findings in six patients with asbestosis are reported.

  20. On-chip superconductivity via gallium overdoping of silicon

    NASA Astrophysics Data System (ADS)

    Skrotzki, R.; Fiedler, J.; Herrmannsdrfer, T.; Heera, V.; Voelskow, M.; Mcklich, A.; Schmidt, B.; Skorupa, W.; Gobsch, G.; Helm, M.; Wosnitza, J.

    2010-11-01

    We report on superconducting properties of gallium-enriched silicon layers in commercial (100) oriented silicon wafers. Ion implantation and subsequent rapid thermal annealing have been applied for realizing gallium precipitation beneath a silicon-dioxide cover layer. Depending on the preparation parameters, we observe a sharp drop to zero resistance at 7 K. The critical-field anisotropy proofs the thin-film character of superconductivity. In addition, out-of-plane critical fields of above 9 T and critical current densities exceeding 2 kA/cm2 promote these structures to be possible playgrounds for future microelectronic technology.

  1. Gallium-67 uptake by the thyroid associated with progressive systemic sclerosis

    SciTech Connect

    Sjoberg, R.J.; Blue, P.W.; Kidd, G.S.

    1989-01-01

    Although thyroidal uptake of gallium-67 has been described in several thyroid disorders, gallium-67 scanning is not commonly used in the evaluation of thyroid disease. Thyroidal gallium-67 uptake has been reported to occur frequently with subacute thyroiditis, anaplastic thyroid carcinoma, and thyroid lymphoma, and occasionally with Hashimoto's thyroiditis and follicular thyroid carcinoma. A patient is described with progressive systemic sclerosis who, while being scanned for possible active pulmonary involvement, was found incidentally to have abnormal gallium-67 uptake only in the thyroid gland. Fine needle aspiration cytology of the thyroid revealed Hashimoto's thyroiditis. Although Hashimoto's thyroiditis occurs with increased frequency in patients with progressive systemic sclerosis, thyroidal uptake of gallium-67 associated with progressive systemic sclerosis has not, to our knowledge, been previously described. Since aggressive thyroid malignancies frequently are imaged by gallium-67 scintigraphy, fine needle aspiration cytology of the thyroid often is essential in the evaluation of thyroidal gallium-67 uptake.

  2. Gallium arsenide processing for gate array logic

    NASA Technical Reports Server (NTRS)

    Cole, Eric D.

    1989-01-01

    The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

  3. Radiant power degradation of silicon-doped gallium arsenide and gallium aluminum arsenide infrared light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Resimont, William N.

    1987-05-01

    This work investigates the use of the capacitance-voltage (C-V), current-voltage (I-V), and radiant power-current-voltage (P-I-V) diode characteristics as a means of modeling the general radiant power degradation of silicon-doped gallium arsenide and gallium aluminum arsenide (GaAs:Si, GaAlAs:Si) infrared light emmiting diodes. The procedure consists of measuring the initial characteristics, stressing with various operating current densities at room temperature, then periodically repeating the measurements. Control diodes that are not stressed are tested to determine the precision of the measuring apparatus and the normal variations in diode behavior.

  4. Characteristics of epitaxial garnets grown by CVD using single metal alloy sources. [Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Besser, P. J.; Hamilton, T. N.; Mee, J. E.; Stermer, R. L.

    1974-01-01

    Single metal alloys have been explored as the cation source in the chemical vapor deposition (CVD) of iron garnets. Growth of good quality single crystal garnet films containing as many as five different cations has been achieved over a wide range of deposition conditions. The relationship of film composition to alloy compositions and deposition conditions has been determined for several materials. By proper choice of the alloy composition and the deposition conditions, uncrazed deposits were grown on (111) gadolinium gallium garnet (GGG) substrates. Data on physical, magnetic and optical properties of representative films is presented and discussed.

  5. Discovery of gallium, germanium, lutetium, and hafnium isotopes

    SciTech Connect

    Gross, J.L.; Thoennessen, M.

    2012-09-15

    Currently, twenty-eight gallium, thirty-one germanium, thirty-five lutetium, and thirty-six hafnium isotopes have been observed and the discovery of these isotopes is described here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  6. Axial Distribution of Gallium in Silicon Crystals for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    Lee, Kyoung-Hee

    2007-05-01

    The lifetime degradation induced by light illumination or carrier injection observed in Czochralski-grown silicon leads to a significant decrease in solar cell efficiency. The reduction in the extent of this effect has a high potential for the improvement of Czochralski-grown silicon solar cells. An approach to the substitution of boron with gallium in p-type Czochralski-grown silicon crystal has been pursued in a recent study. Since a reduced extent of light-induced degradation of minority carrier lifetime was observed, this approach seems to be very promising. The only disadvantage is the low segregation coefficient of gallium in silicon, resulting in a high resistivity variation over the crystal length compared with that in the case of boron doping. We propose a simple codoping (e.g., gallium and bismuth) method for controlling resistivity variation. Numerical simulations have been performed to study the transport phenomena of dopants in conventional and proposed silicon growth processes using the finite-element method and implicit Euler time integration. It has been demonstrated using mathematical models and numerical analysis that the axial distribution of effective gallium concentration can be modified in Czochralski-grown silicon for photovoltaic applications and made relatively uniform by the proposed doping method.

  7. The 100 micron detector development program. [gallium doped germanium photoconductors

    NASA Technical Reports Server (NTRS)

    Moore, W. J.

    1976-01-01

    An effort to optimize gallium-doped germanium photoconductors (Ge:Ga) for use in space for sensitive detection of far infrared radiation in the 100 micron region is described as well as the development of cryogenic apparatus capable of calibrating detectors under low background conditions.

  8. Photoluminescence of gallium arsenide electron-irradiated at 20 K

    NASA Astrophysics Data System (ADS)

    Korshunov, F. P.; Mudryi, A. V.; Patuk, A. I.; Shakin, I. A.

    1997-01-01

    The processes of defect formation in single crystals of gallium arsenide electron-irradiated at cryogenic temperatures (20 K) have been investigated by the luminescence method. It is shown that at such temperatures the primary radiation-induced defects, in particular, intrinsic interstitial atoms, can migrate in a crystal and form complexes with their participation.

  9. Self- and zinc diffusion in gallium antimonide

    SciTech Connect

    Nicols, Samuel Piers

    2002-03-26

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak, (2001)]. Many of the findings which will be reported here were previously published in three journal articles. Hartmut Bracht was the lead author on two articles on self-diffusion studies in GaSb [Bracht, (2001), (2000)], while this report's author was the lead author on Zn diffusion results [Nicols, (2001)]. Much of the information contained herein can be found in those articles, but a more detailed treatment is presented here.

  10. Pair distribution function study on compression of liquid gallium

    SciTech Connect

    Luo, Shengnian; Yu, Tony; Chen, Jiuhua; Ehm, Lars; Guo, Quanzhong; Parise, John

    2008-01-01

    Integrating a hydrothermal diamond anvil cell (HDAC) and focused high energy x-ray beam from the superconductor wiggler X17 beamline at the National Synchrotron Light Source (NSLS) at the Brookhaven National Laboratory (BNL), we have successfully collected high quality total x-ray scattering data of liquid gallium. The experiments were conducted at a pressure range from 0.1GPa up to 2GPa at ambient temperature. For the first time, pair distribution functions (PDF) for liquid gallium at high pressure were derived up to 10 {angstrom}. Liquid gallium structure has been studied by x-ray absorption (Di Cicco & Filipponi, 1993; Wei et al., 2000; Comez et al., 2001), x-ray diffraction studies (Waseda & Suzuki, 1972), and molecular dynamics simulation (Tsay, 1993; Hui et al., 2002). These previous reports have focused on the 1st nearest neighbor structure, which tells us little about the atomic arrangement outside the first shell in non- crystalline materials. This study focuses on the structure of liquid gallium and the atomic structure change due to compression. The PDF results show that the observed atomic distance of the first nearest neighbor at 2.78 {angstrom} (first G(r) peak and its shoulder at the higher Q position) is consistent with previous studies by x-ray absorption (2.76 {angstrom}, Comez et al., 2001). We have also observed that the first nearest neighbor peak position did not change with pressure increasing, while the farther peaks positions in the intermediate distance range decreased with pressure increasing. This leads to a conclusion of the possible existence of 'locally rigid units' in the liquid. With the addition of reverse Monte Carlo modeling, we have observed that the coordination number in the local rigit unit increases with pressure. The bulk modulus of liquid gallium derived from the volume compression curve at ambient temperature (300K) is 12.1(6) GPa.

  11. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

    PubMed Central

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm2 using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si. PMID:25593562

  12. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate.

    PubMed

    Ghazali, Norizzawati Mohd; Yasui, Kanji; Hashim, Abdul Manaf

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm(2) using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si. PMID:25593562

  13. Brittle-to-ductile transition in polycrystalline aluminum containing gallium in the grain boundaries

    NASA Astrophysics Data System (ADS)

    Itoh, A.; Izumi, J.; Ina, K.; Koizumi, H.

    2010-07-01

    It is well known that aluminum/gallium couple causes liquid metal embrittlement. Gallium atoms penetrate the grain boundaries of polycrystalline aluminum and degrade it. Polycrystalline aluminum specimens were contacted with a small droplet of gallium for 24 h. After gallium was removed from the surface of the specimens, tensile tests were performed between 77 K and 313 K. The specimens are ductile below 230 K and brittle above 303 K, the melting temperature of gallium. Between 280 K and 300 K, the maximum stress is larger in the specimens heated from 77 K than in those cooled from 313 K. This thermal history dependence of the maximum stress is considered to be attributed to the solidification of supercooled gallium in the grain boundaries.

  14. VANADIUM ALLOYS

    DOEpatents

    Smith, K.F.; Van Thyne, R.J.

    1959-05-12

    This patent deals with vanadium based ternary alloys useful as fuel element jackets. According to the invention the ternary vanadium alloys, prepared in an arc furnace, contain from 2.5 to 15% by weight titanium and from 0.5 to 10% by weight niobium. Characteristics of these alloys are good thermal conductivity, low neutron capture cross section, good corrosion resistance, good welding and fabricating properties, low expansion coefficient, and high strength.

  15. BRAZING ALLOYS

    DOEpatents

    Donnelly, R.G.; Gilliland, R.G.; Slaughter, G.M.

    1963-02-26

    A brazing alloy which, in the molten state, is characterized by excellent wettability and flowability, said alloy being capable of forming a corrosion resistant brazed joint wherein at least one component of said joint is graphite and the other component is a corrosion resistant refractory metal, said alloy consisting essentially of 20 to 50 per cent by weight of gold, 20 to 50 per cent by weight of nickel, and 15 to 45 per cent by weight of molybdenum. (AEC)

  16. ''Hot spot'' on gallium-67-citrate scan in renal cell carcinoma. Clinicopathologic and biochemical correlation

    SciTech Connect

    Kawamura, J.; Itoh, H.; Yoshida, O.; Fujita, T.; Torizuka, K.

    1984-09-01

    A frontal tomographic whole-body gallium-67-citrate scan was performed on 30 patients with renal cell carcinoma. Positive gallium uptake by the kidney in 20 patients (66.7%) correlated well with the clinicopathologically higher stage and grade of the tumor and with abnormal values in prognostic indexes in the blood. Thus, a negative gallium uptake may be indicative of an improved clinical course and longer survival in patients with renal cell carcinoma.

  17. Gallium uptake in the thyroid gland in amiodarone-induced hyperthyroidism

    SciTech Connect

    Ling, M.C.; Dake, M.D.; Okerlund, M.D.

    1988-04-01

    Amiodarone is an iodinated antiarrhythmic agent that is effective in the treatment of atrial and ventricular arrhythmias. A number of side effects are seen, including pulmonary toxicity and thyroid dysfunction. A patient with both amiodarone-induced pneumonitis and hyperthyroidism who exhibited abnormal gallium activity in the lungs, as well as diffuse gallium uptake in the thyroid gland is presented. The latter has not been previously reported and supports the concept of iodide-induced thyroiditis with gallium uptake reflecting the inflammatory response.

  18. [Significance of gallium scintigraphy in tumors and granulomatosis of the skin].

    PubMed

    Thiers, G; Munz, D; Altmeyer, P; Holzmann, H

    1984-09-01

    Scintigraphy with gallium has proved useful as a screening method for the diagnosis of certain malignant tumors and systemic diseases. One single scintigraphic investigation is able to detect almost all organs of a man. We checked this radiopharmacon with regard to its usefulness in dermatology. Gallium scintigraphy shows high sensitivity concerning verification and localization of metastases of malignant melanome as well as B- and T-cell lymphomas. Moreover, gallium is effective in controlling the therapie of sarcoidosis. PMID:6485462

  19. Vapor-phase epitaxy of gallium nitride by gallium arc discharge evaporation

    NASA Astrophysics Data System (ADS)

    Heikman, S.; Keller, S.; Mishra, U. K.

    2006-08-01

    Vapor-phase epitaxy of GaN was performed by combining ammonia with gallium evaporated into an inert gas stream by a DC arc discharge, and letting the mixture pass through a pair of heated graphite susceptors. Growth rates as high as 30 ?m/h were achieved. The growth on the top sample was specular in a large area, and was of high quality as characterized by atomic force microscopy and photoluminescence spectroscopy. The bottom sample had a high density of macroscopic defects, presumably caused by Ga droplets in the gas phase resulting from the arc evaporation process. The experimental growth rate was found to be less than {1}/{3} of values predicted in a computer flow dynamic model of the growth system, and Ga-NH 3 pre-reactions were implicated as the likely cause of the discrepancy. The growth efficiency, calculated to 2%, could arguably be improved by reducing the reactor growth pressure, and by changing the reactor geometry to avoid Ga condensation on walls. Potential advantages of the described growth technique are cheap source materials of high purity and low equipment costs. Furthermore, since no corrosive gasses were used, hardware corrosion and gas-phase impurities can be reduced.

  20. Cutaneous gallium uptake in patients with AIDS with mycobacterium avium-intracellulare septicemia

    SciTech Connect

    Allwright, S.J.; Chapman, P.R.; Antico, V.F.; Gruenewald, S.M.

    1988-07-01

    Gallium imaging is increasingly being used for the early detection of complications in patients with AIDS. A 26-year-old homosexual man who was HIV antibody positive underwent gallium imaging for investigation of possible Pneumocystis carinii pneumonia. Widespread cutaneous focal uptake was seen, which was subsequently shown to be due to mycobacterium avium-intracellulare (MAI) septicemia. This case demonstrates the importance of whole body imaging rather than imaging target areas only, the utility of gallium imaging in aiding the early detection of clinically unsuspected disease, and shows a new pattern of gallium uptake in disseminated MAI infection.

  1. Nonpolar m-plane gallium Nitride-based Laser Diodes in the Blue Spectrum

    NASA Astrophysics Data System (ADS)

    Kelchner, Kathryn M.

    Gallium nitride (GaN), together with its alloys with aluminum and indium, have revolutionized the solid-state optoelectronics market for their ability to emit a large portion of the visible electromagnetic spectrum from deep ultraviolet and into the infrared. GaN-based semiconductor laser diodes (LDs) with emission wavelengths in the violet, blue and green are already seeing widespread implementation in applications ranging from energy storage, lighting and displays. However, commercial GaN-based LDs use the basal c-plane orientation of the wurtzite crystal, which can suffer from large internal electric fields due to discontinuities in spontaneous and piezoelectric polarizations, limiting device performance. The nonpolar orientation of GaN benefits from the lack of polarization-induced electric field as well as enhanced gain. This dissertation discusses some of the benefits and limitations of m-plane oriented nonpolar GaN for LD applications in the true blue spectrum (450 nm). Topics include an overview of material growth by metal-organic chemical vapor deposition (MOCVD), waveguide design and processing techniques for improving device performance for multiple lateral mode and single lateral mode ridge waveguides.

  2. Enhanced thermal stability of alpha gallium oxide films supported by aluminum doping

    NASA Astrophysics Data System (ADS)

    Lee, Sam-Dong; Ito, Yoshito; Kaneko, Kentaro; Fujita, Shizuo

    2015-03-01

    In order to enhance the thermal stability of corundum-structured gallium oxide (?-Ga2O3), which is attractive for use in wide-band-gap heterostructure devices and amenable to band gap and function engineering but suffers from phase transformation in high-temperature growth (>500 C) and treatments (>550 C), we attempted aluminum (Al) doping. The thermal stability of the films was enhanced by increasing the Al doping concentration, and under the best doping conditions where the Al concentration was negligible compared with the basic chemical composition of Ga2O3, the growth and successive thermal treatment temperatures were increased to as high as 650 and 750 C, respectively, without the marked appearance of the ?-gallia phase. Under the doping conditions above, the inclusion of Al was not negligible at the growth temperature of 800 C and the film composition was expressed as an alloy of ?-(Al0.2Ga0.8)2O3, but this film remained as the ?-phase at annealing temperatures up to 900 C. Enhanced thermal stability widens the device process windows, contributing to the formation of various high-performance devices.

  3. Critical Fields and Growth Rates of the Tayler Instability as Probed by a Columnar Gallium Experiment

    NASA Astrophysics Data System (ADS)

    Rdiger, Gnther; Gellert, Marcus; Schultz, Manfred; Strassmeier, Klaus G.; Stefani, Frank; Gundrum, Thomas; Seilmayer, Martin; Gerbeth, Gunter

    2012-08-01

    Many astrophysical phenomena (such as the slow rotation of neutron stars or the rigid rotation of the solar core) can be explained by the action of the Tayler instability of toroidal magnetic fields in the radiative zones of stars. In order to place the theory of this instability on a safe fundament, it has been realized in a laboratory experiment measuring the critical field strength, the growth rates, as well as the shape of the supercritical modes. A strong electrical current flows through a liquid metal confined in a resting columnar container with an insulating outer cylinder. As the very small magnetic Prandtl number of the gallium-indium-tin alloy does not influence the critical Hartmann number of the field amplitudes, the electric currents for marginal instability can also be computed with direct numerical simulations. The results of this theoretical concept are confirmed by the experiment. Also the predicted growth rates on the order of minutes for the nonaxisymmetric perturbations are certified by the measurements. That they do not directly depend on the size of the experiment is shown as a consequence of the weakness of the applied fields and the absence of rotation.

  4. Neutron radiographic measurement of macrosegregation in an experimentally solidified binary metal alloy

    SciTech Connect

    Kim, B.; Prescott, P.J.

    1996-12-31

    Neutron radiography is considered as a mean of extending and improving experimental verification methods for alloy solidification models. A gallium-27 wt. pct. indium alloy is solidified in a square cavity, chilled along one vertical side wall, and macrosegregation in solidified ingots is measured using neutron radiography. Neutron radiographs are recorded on X-ray film, and since the neutron capture cross-section of indium is more than an order of magnitude larger than that of gallium, good contrast between indium enriched and depleted zones is obtained. Moreover, calibration, film processing, and digital image processing procedures are developed in order to accurately quantify the macrosegregation recorded on neutron radiographs. The method yields a highly resolved macrosegregation field, rather than a few discrete measurements, and is used to help interpret measured cooling curves and infer thermosolutal convection patterns, which existed during solidification.

  5. Corrosion of alloy 718 in a mercury thermal convection loop

    SciTech Connect

    Pawel, S.J.; DiStefano, J.R.; Manneschmidt, E.T.

    1999-12-01

    Two thermal convection loops (TCLs) fabricated from annealed alloy 718 continuously circulated mercury (Hg) with 1000 wppm gallium (Ga), respectively, for about 5000 h, duplicating previous TCL tests for annealed 316L. In each case, the maximum loop temperature was 305C, the minimum temperature was 242C, and the Hg flow rate was approximately 1.2 m/min. Unlike the 316L exposed to Hg, which above about 260C exhibited a thin, porous surface layer depleted in Ni and Cr, the alloy 718 coupons revealed essentially no wetting and, therefore, no interaction with that Hg at any temperature. Alloy 718 coupons suspended in the loops revealed inconsequentially small weight changes, and both the coupons and loop tubing exhibited no detectable metallographic evidence of attack.

  6. NiAl alloys for high-temperature structural applications

    NASA Astrophysics Data System (ADS)

    Darolia, Ram

    1991-03-01

    If their properties can be improved, nickel aluminide alloys offer significant payoffs in gas turbine engine applications. For these materials, excellent progress has been made toward understanding their mechanical behavior as well as improving their low-temperature ductility and high-temperature strength. For example, recent work shows that room-temperature ductility can be improved dramatically by microalloying with iron, gallium or molybdenum. The next challenge is to develop an alloy which has the required balance of ductility, toughness and strength. Development of design and test methodologies for components made out of low-ductility, anisotropic materials will also be required. While significant challenges remain, the continuing developments suggest that the prognosis for using NiAl alloys as high-temperature structural materials is good.

  7. Ultra-low threshold gallium nitride photonic crystal nanobeam laser

    SciTech Connect

    Niu, Nan Woolf, Alexander; Wang, Danqing; Hu, Evelyn L.; Zhu, Tongtong; Oliver, Rachel A.; Quan, Qimin

    2015-06-08

    We report exceptionally low thresholds (9.1 μJ/cm{sup 2}) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.

  8. Detection of postcardiotomy bacterial pericarditis with gallium-67 citrate

    SciTech Connect

    Zuckier, L.S.; Weissmann, H.S.; Goldman, M.J.; Brodman, R.; Kamholz, S.L.; Freeman, L.M.

    1986-04-01

    A 46-year-old man who had undergone apical cardiac aneurysmectomy with a ventriculotomy graft and implanted automatic cardioverter-defibrillator electrodes, presented with fever, left-sided pleuritic chest pain, and a draining sinus. A Ga-67 scan was performed to aid in determining whether the infection was limited to the chest wall or if it had penetrated deeper to the cardiac structures. Uptake of gallium within the cardiac region, in association with minimal rib uptake of Tc-99m MDP, strongly supported the existence of infection within the pericardium. CT scan demonstrated a pericardial collection which under CT-guided aspiration proved to be purulent. Definitive surgical drainage was performed, and the patient was discharged 4 weeks postoperatively. Ga-67 imaging can provide an accurate and relatively rapid means of localizing infection in the postcardiotomy patient. A thorough bibliography of pericardial gallium uptake is provided.

  9. Thermodynamic properties of liquid gallium from picosecond acoustic velocity measurements

    NASA Astrophysics Data System (ADS)

    Ayrinhac, S.; Gauthier, M.; Le Marchand, G.; Morand, M.; Bergame, F.; Decremps, F.

    2015-07-01

    Due to discrepancies in the literature data the thermodynamic properties of liquid gallium are still in debate. Accurate measurements of adiabatic sound velocities as a function of pressure and temperature have been obtained by the combination of laser picosecond acoustics and surface imaging on sample loaded in diamond anvil cell. From these results the thermodynamic parameters of gallium have been extracted by a numerical procedure up to 10 GPa and 570 K. It is demonstrated that a Murnaghan equation of state accounts well for the whole data set since the isothermal bulk modulus BT has been shown to vary linearly with pressure in the whole temperature range. No evidence for a previously reported liquid-liquid transition has been found in the whole pressure and temperature range explored.

  10. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOEpatents

    Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

    1998-08-08

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  11. Usefulness of gallium imaging in the evaluation of lung cancer

    SciTech Connect

    Alazraki, N.

    1980-01-01

    The current enthusiasm for gallium (Ga) citrate as a tumor imaging agent reflects the need of clinical medicine for a good tumor imaging agent. Ga-67 was most consistently and reliably taken up in lung tumors, with sensitivities of Ga imaging positivity in lung cancer ranging from 85 to 95%. Subsequent studies on Ga-67 led to the recognition of its preferential concentration in inflammatory lesions and abscess. These reports resulted in the clinical application of Ga-67 imaging as a diagnostic tool in the evaluation of patients with suspected abscesses. Mechanisms of Ga localization in tumor and inflammatory lesions are not currently well understood. Data regarding the thresholds of various factors which determine visibility of a lung tumor by Ga-67 imaging have been described in some detail. The factors include lesion size, depth in tissue, gallium concentration in tumor relative to background, type of film and instrumentation used, and count rates obtained.

  12. Neutron detection using boron gallium nitride semiconductor material

    SciTech Connect

    Atsumi, Katsuhiro; Inoue, Yoku; Nakano, Takayuki; Mimura, Hidenori; Aoki, Toru

    2014-03-01

    In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to ?-rays but poor sensitivity to ?-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after ?-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

  13. Mr Fluid of Liquid Gallium Dispersing Magnetic Particles

    NASA Astrophysics Data System (ADS)

    Ito, Ryoji; Dodbiba, Gjergj; Fujita, Toyohisa

    The heat convection, which can be provided from a magneto-rheological (MR) fluid, is a useful process in converting heat from high to low temperature and vice versa. In this work, the property and preparation of liquid gallium-based MR fluid is presented. The prepared MR fluid disperses micron-sized iron or nicked metal powders in liquid gallium (Ga). In this experiment, supercooling of MR fluid was investigated in order to obtain the condition under which the liquid state can be kept below the melting point. Moreover, the viscosity and elasticity of the prepared MR liquid were measured as a function of magnetic flux density. Finally, it was demonstrated that liquid Ga is a useful base for preparing a new type MR fluid.

  14. Thermal modeling of power gallium arsenide microwave integrated circuits

    SciTech Connect

    Webb, P.W. )

    1993-05-01

    Low-power Gallium Arsenide-based microwave circuits have been used for many years for frequencies higher than those possible with silicon technology. At the present time manufacturers are developing power devices for ever higher frequencies using GaAs MESFET's and heterojunction bipolar devices constructed with III-V compounds on GaAs substrates. There is also interest in integrating power devices on Monolithic Microwave Integrated Circuits (MMIC's). A problem with the technology is the low thermal conductivity of Gallium Arsenide and this gives rise to thermal design problems which must be solved if good reliability is to be achieved. The paper uses a three-dimensional numerical simulator to study this problem and in particular examines the approximations which are possible in performing realistic assessments of the thermal resistance of typical GaAs power device structures under steady-state conditions.

  15. Diagnosis of mycotic abdominal aortic aneurysm using 67-gallium citrate

    SciTech Connect

    Blumoff, R.L.; McCartney, W.; Jaques, P.; Johnson, G. Jr.

    1982-11-01

    Mycotic aneurysms of the abdominal aorta are uncommon, but potentially lethal problems. Clinical subtleties may suggest their presence, but in the past, definitive diagnosis has been dependent on surgical exploration or autopsy findings. A case is presented in which 67-gallium citrate abdominal scanning localized the site of sepsis in an abdominal aortic aneurysm and allowed for prompt and successful surgical therapy. This noninvasive technique is recommended as a adjunct in the diagnosis of mycotic abdominal aortic aneurysms.

  16. First-principles total-energy calculation of gallium nitride

    NASA Astrophysics Data System (ADS)

    Min, B. J.; Chan, C. T.; Ho, K. M.

    1992-01-01

    A first-principles total-energy calculation is performed on gallium nitride (GaN). The equilibrium lattice parameters, the bulk modulus, and the cohesive energy of GaN in the wurtzite structure is calculated and compared with experimental values. In our calculation, the ground state of GaN is a zinc-blende structure, and the difference between these two phases is around 1.4 mRy.

  17. Trap influence on the performance of gallium arsenide radiation detectors

    SciTech Connect

    Castaldini, A.; Cavallini, A.; Polenta, L.; Canali, C.; Nava, F.; Papa, C. del

    1996-12-31

    Ohmic contacts play an important role in the performance of LEC gallium arsenide particle detectors since they possibly control the injection of charge carriers. Contact characteristics have been compared and related to electrically active defects induced during contact preparation and to the detector efficiency. The electric field distribution has also been analyzed. Spectroscopic investigations have put into evidence that the contact fabrication process significantly influences the trap density whilst it does not change their signatures.

  18. Piezoelectric coefficients of aluminum nitride and gallium nitride

    SciTech Connect

    Lueng, C.M.; Chan, H.L.W.; Fong, W.K.; Surya, C.; Choy, C.L.

    1999-07-01

    Aluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

  19. Assessment of arsenic exposures and controls in gallium arsenide production.

    PubMed

    Sheehy, J W; Jones, J H

    1993-02-01

    The electronics industry is expanding the use of gallium arsenide in the production of optoelectronic devices and integrated circuits. Workers in the electronics industry using gallium arsenide are exposed to hazardous substances such as arsenic, arsine, and various acids. Arsenic requires stringent controls to minimize exposures (the current OSHA PEL for arsenic is 10 micrograms/m3 and the NIOSH REL is 2 micrograms/m3 ceiling). Inorganic arsenic is strongly implicated in respiratory tract and skin cancer. For these reasons, NIOSH researchers conducted a study of control systems for facilities using gallium arsenide. Seven walk-through surveys were performed to identify locations for detailed study which appeared to have effective controls; three facilities were chosen for in-depth evaluation. The controls were evaluated by industrial hygiene sampling. Including personal breathing zone and area air sampling for arsenic and arsine; wipe samples for arsenic also were collected. Work practices and the use of personal protective equipment were documented. This paper reports on the controls and the arsenic exposure results from the evaluation of the following gallium arsenide processes: Liquid Encapsulated Czochralski (LEC) and Horizontal Bridgeman (HB) crystal growing, LEC cleaning operations, ingot grinding/wafer sawing, and epitaxy. Results at one plant showed that in all processes except epitaxy, average arsenic exposures were at or above the OSHA action level of 5 micrograms/m3. While cleaning the LEC crystal pullers, the average potential arsenic exposure of the cleaning operators was 100 times the OSHA PEL. At the other two plants, personal exposures for arsenic were well controlled in LEC, LEC cleaning, grinding/sawing, and epitaxy operations. PMID:8452098

  20. Generalized stacking fault energies of alloys.

    PubMed

    Li, Wei; Lu, Song; Hu, Qing-Miao; Kwon, Se Kyun; Johansson, Börje; Vitos, Levente

    2014-07-01

    The generalized stacking fault energy (γ surface) provides fundamental physics for understanding the plastic deformation mechanisms. Using the ab initio exact muffin-tin orbitals method in combination with the coherent potential approximation, we calculate the γ surface for the disordered Cu-Al, Cu-Zn, Cu-Ga, Cu-Ni, Pd-Ag and Pd-Au alloys. Studying the effect of segregation of the solute to the stacking fault planes shows that only the local chemical composition affects the γ surface. The calculated alloying trends are discussed using the electronic band structure of the base and distorted alloys.Based on our γ surface results, we demonstrate that the previous revealed 'universal scaling law' between the intrinsic energy barriers (IEBs) is well obeyed in random solid solutions. This greatly simplifies the calculations of the twinning measure parameters or the critical twinning stress. Adopting two twinnability measure parameters derived from the IEBs, we find that in binary Cu alloys, Al, Zn and Ga increase the twinnability, while Ni decreases it. Aluminum and gallium yield similar effects on the twinnability. PMID:24903220

  1. Appraisal of lupus nephritis by renal imaging with gallium-67

    SciTech Connect

    Bakir, A.A.; Lopez-Majano, V.; Hryhorczuk, D.O.; Rhee, H.L.; Dunea, G.

    1985-08-01

    To assess the activity of lupus nephritis, 43 patients with systemic lupus erythematosus (SLE) were studied by gallium imaging. Delayed renal visualization 48 hours after the gallium injection, a positive result, was noted in 25 of 48 scans. Active renal disease was defined by the presence of hematuria, pyuria (10 or more red blood cells or white blood cells per high-power field), proteinuria (1 g or more per 24 hours), a rising serum creatinine level, or a recent biopsy specimen showing proliferative and/or necrotizing lesions involving more than 20 percent of glomeruli. Renal disease was active in 18 instances, inactive in 23, and undetermined in seven (a total of 48 scans). Sixteen of the 18 scans (89 percent) in patients with active renal disease showed positive findings, as compared with only four of 23 scans (17 percent) in patients with inactive renal disease (p less than 0.001). Patients with positive scanning results had a higher rate of hypertension (p = 0.02), nephrotic proteinuria (p = 0.01), and progressive renal failure (p = 0.02). Mild mesangial nephritis (World Health Organization classes I and II) was noted only in the patients with negative scanning results (p = 0.02) who, however, showed a higher incidence of severe extrarenal SLE (p = 0.04). It is concluded that gallium imaging is a useful tool in evaluating the activity of lupus nephritis.

  2. Incidental diagnosis of pregnancy on bone and gallium scintigraphy

    SciTech Connect

    Palestro, C.J.; Malat, J.; Collica, C.J.; Richman, A.H.

    1986-03-01

    Bone and gallium scintigraphy were performed as part of the diagnostic workup of a 21-yr-old woman who presented at our institution with a history of progressively worsening low back pain over a 1-wk period of time. The angiographic phase of the bone scan demonstrated a well-defined radionuclide blush within the pelvis just cephalad to the urinary bladder with persistent hyperemia noted in the blood-pool image. We attribute these findings to a uterine blush secondary to the pronounced uterine muscular hyperplasia, hyperemia, and edema that accompany pregnancy. Gallium scintigraphy demonstrated intense bilateral breast accumulation of the imaging agent in a typical doughnut pattern which is commonly found in the prelactating and lactating breast. Also demonstrated was apparent gallium accumulation in the placenta. This case is presented to emphasize the radionuclide findings that occur during pregnancy, particularly the incidental finding of radionuclide blush during the angiographic phase of a radionuclide scintigraphy which should alert the nuclear physician to the possibility of pregnancy in a woman of childbearing age.

  3. ZIRCONIUM ALLOY

    DOEpatents

    Wilhelm, H.A.; Ames, D.P.

    1959-02-01

    A binary zirconiuin--antimony alloy is presented which is corrosion resistant and hard containing from 0.07% to 1.6% by weight of Sb. The alloys have good corrosion resistance and are useful in building equipment for the chemical industry.

  4. URANIUM ALLOYS

    DOEpatents

    Seybolt, A.U.

    1958-04-15

    Uranium alloys containing from 0.1 to 10% by weight, but preferably at least 5%, of either zirconium, niobium, or molybdenum exhibit highly desirable nuclear and structural properties which may be improved by heating the alloy to about 900 d C for an extended period of time and then rapidly quenching it.

  5. POLLUTION PREVENTION IN THE SEMICONDUCTOR INDUSTRY THROUGH RECOVERY AND RECYCLING OF GALLIUM AND ARSENIC FROM GAAS POLISHING WASTES

    EPA Science Inventory

    A process was developed for the recovery of both arsenic and gallium from gallium arsenide polishing wastes. The economics associated with the current disposal techniques utilizing ferric hydroxide precipitation dictate that sequential recovery of toxic arsenic and valuble galliu...

  6. Smooth cubic commensurate oxides on gallium nitride

    SciTech Connect

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Losego, Mark D.; Mita, Seiji; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul; Biegalski, Michael D.; Christen, Hans M.

    2014-02-14

    Smooth, commensurate alloys of 〈111〉-oriented Mg{sub 0.52}Ca{sub 0.48}O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  7. Smooth cubic commensurate oxides on gallium nitride

    NASA Astrophysics Data System (ADS)

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Biegalski, Michael D.; Christen, Hans M.; Losego, Mark D.; Mita, Seiji; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul

    2014-02-01

    Smooth, commensurate alloys of ⟨111⟩-oriented Mg0.52Ca0.48O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  8. The effect of radiation on the electrical properties of aluminum gallium nitride/gallium nitride heterostructures

    NASA Astrophysics Data System (ADS)

    McClory, John W.

    AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) have attracted radiation effects research interest due to their potential use in high power and high frequency space applications. Some of these applications involve the integration of GaN-based HFETs into satellite systems required to operate in earth orbit for years in a radiation environment at widely varying temperatures. In this study, AlGaN/GaN Heterostructures were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and gate conductance were measured. The results were compared to the charge control model of the drain current and trap-assisted tunneling model of the gate current to determine the source of the radiation-induced changes in these properties. AlGaN/GaN HFETs were generally hardened to radiation effects compared to silicon and gallium arsenide based devices. The HFETs continued to function as transistors after radiation fluences of up to 1014 0.45 MeV electrons/cm2 or 1013 1.0 MeV(eq) neutrons/cm 2. AlGaN/GaN HFETs were susceptible to threshold voltage shifts and changes to drain currents after irradiation. After electron and neutron irradiation applied at 80 K, measurement of the drain current at this temperature without warming showed an increase in the current that saturated after 10 13 electrons/cm2 or 1010 neutrons/cm 2. This low-temperature increase in drain current and negative threshold voltage shift after irradiation is attributed to positive charge in the AlGaN layer. The effect anneals after warming to room temperature as the positive charge is neutralized. Measurement at room temperature after low-temperature irradiation shows a decrease in drain current. The positive charges that cause the low-temperature increase become mobile as the temperature increases and result in charged defects along the AlGaN-GaN interface. These charged defects decrease the mobility in the 2DEG and hence decrease the current. This drain current reduction does not anneal at room temperature as these defects are persistent. AlGaN/GaN HFET gate leakage currents increase after low temperature irradiation. The increased gate current again saturated with additional electron and neutron irradiation above 1013 electrons/cm2 or 10 10 neutrons/cm2. Below 1010 neutrons/cm 2 the increase was not observed. The increase was present throughout the temperature range of 80 K to 300 K and was persistent after room temperature annealing. The increased gate leakage current is attributed to trap-assisted tunneling. The saturation after a relatively low level of irradiation indicates that the defects are based on the complexing of gallium, nitrogen, and/or aluminum defects with an impurity element in the AlGaN. The impurity is of limited quantity in the AlGaN and therefore limits the growth of additional defects. Oxygen is the most likely impurity that is the source of this complexing behavior. The source of the increase in the gate leakage current was modeled using the trap-assisted tunneling (TAT) model. The TAT model was applied to an optimization algorithm to determine which of the variables of the model was the source of increased TAT. Application of the model to post-irradiation vs. pre-irradiation data showed that the dominant parameter change that results in increased gate current was an increase in trap concentration, Nt.

  9. Zintl cluster chemistry in the alkali-metal-gallium systems

    SciTech Connect

    Henning, R.

    1998-03-27

    Previous research into the alkali-metal-gallium systems has revealed a large variety of networked gallium deltahedra. The clusters are analogues to borane clusters and follow the same electronic requirements of 2n+2 skeletal electrons for closo-deltahedra. This work has focused on compounds that do not follow the typical electron counting rules. The first isolated gallium cluster was found in Cs{sub 8}Ga{sub 11}. The geometry of the Ga{sub 11}{sup 7{minus}} unit is not deltahedral but can be described as a penta-capped trigonal prism. The reduction of the charge from a closo-Ga{sub 11}{sup 13{minus}} to Ga{sub 11}{sup 7{minus}} is believed to be the driving force of the distortion. The compound is paramagnetic because of an extra electron but incorporation of a halide atom into the structure captures the unpaired electron and forms a diamagnetic compound. A second isolated cluster has been found in Na{sub 10}Ga{sub 10}Ni where the tetra-capped trigonal prismatic gallium is centered by nickel. Stabilization of the cluster occurs through Ni-Ga bonding. A simple two-dimensional network occurs in the binary K{sub 2}Ga{sub 3} Octahedra are connected through four waist atoms to form a layered structure with the potassium atoms sitting between the layers. Na{sub 30.5}Ga{sub 60{minus}x}Ag{sub x} is nonstoichiometric and needs only a small amount of silver to form (x {approximately} 2--6). The structure is composed of three different clusters which are interconnected to form a three-dimensional structure. The RbGa{sub 3{minus}x}Au{sub x} system is also nonstoichiometric with a three-dimensional structure composed of Ga{sub 8} dodecahedra and four-bonded gallium atoms. Unlike Na{sub 30.5}Ga{sub 60{minus}x}Ag{sub x}, the RbGa{sub 3} binary is also stable. The binary is formally a Zintl phase but the ternary is not. Some chemistry in the alkali-metal-indium system also has been explored. A new potassium-indium binary is discussed but the structure has not been completely characterized.

  10. Elastic properties of crystalline and liquid gallium at high pressures

    SciTech Connect

    Lyapin, A. G.; Gromnitskaya, E. L.; Yagafarov, O. F. Stal'gorova, O. V.; Brazhkin, V. V.

    2008-11-15

    The elastic properties of gallium, such as the bulk modulus B, the shear modulus G, and the Poisson's ratio {sigma}, are investigated and the relative change in the volume is determined in the stability regions of the Ga I, Ga II, and liquid phases at pressures of up to 1.7 GPa. The observed lines of the Ga I-Ga II phase transition and the melting curves of the Ga I and Ga II phases are in good agreement with the known phase diagram of gallium; in this case, the coordinates of the Ga I-Ga II-melt triple point are determined to be 1.24 {+-} 0.40 GPa and 277 {+-} 2 K. It is shown that the Ga I-Ga II phase transition is accompanied by a considerable decrease in the moduli B (by 30%) and G (by 55%) and an increase in the density by 5.7%. The Poisson's ratio exhibits a jump from typically covalent values of approximately 0.22-0.25 to values of approximately 0.32-0.33, which are characteristic of metals. The observed behavior of the elastic characteristics is described in the framework of the model of the phase transition from a 'quasi-molecular' (partially covalent) metal state to a 'normal' metal state. An increase in the Poisson's ratio in the Ga I phase from 0.22 to 0.25 with an increase in the pressure can be interpreted as a decrease in the degree of covalence, i.e., the degree of spatial anisotropy of the electron density along the bonds, whereas the large value of the pressure derivative of the bulk modulus (equal to approximately 8) observed up to the transition to the Ga II phase or the melt is associated not only with the quasicovalent nature of the Ga I phase but also with the structural features. In view of the presence of seven neighbors for each gallium atom in the Ga I phase, the gallium lattice can be treated as a structure intermediate between typical open-packed and close-packed structures. Premelting effects, such as a flattening of the isothermal dependence of the shear modulus G(p) with increasing pressure and an increase in the slope of the isobaric dependences G(T) with increasing temperature, are revealed in the vicinity of the melting curve. The bulk modulus of liquid gallium near the melting curve proves to be rather close to the corresponding values for the normal metal Ga II.

  11. Properties of Closed-Shell Titanium Silicate and Gallium-Containing Semiconductor Systems

    NASA Astrophysics Data System (ADS)

    Stoute, Nicholas Aaron

    We demonstrate that an atomic-scale approach may be appropriate for the analysis of the compositional and bonding properties of titanium silicate alloys and shallow d-core level reflectance spectra of gallium-compound semiconductors. Ti silicate analysis was conducted using X-Ray Absorption Spectroscopy (XAS), X-Ray Photoemission Spectroscopy (XPS), and Spectroscopic Ellipsometry (SE) data taken on a range of Ti-silicate alloys. XAS data were obtained by the Lucovsky group at Stanford Synchrotron Radiation Laboratories (SSRL) at the Stanford Linear Accelerator Center (SLAC), and were used as the primary source of information. To bolster conclusions we solicited XPS data from the Opila Laboratory at the University of Delaware, which were provided by Les Fleming. We also took SE data on Ti silicate alloys annealed at different temperatures using two ellipsometers, one of which was built by the author specifically to probe energies in the vacuum uv range. Reflectance data from 20 to 25 eV, which contain spectral features due to transitions from Ga3d core levels, were obtained on GaP, GaAs, GaSb, GaSe, and GaPxAs1{x at the storage ring Tantalus 1 at the Stoughton Synchrotron Radiation Center by Aspnes and co-workers from about 1980 to 1982. Ti L2,3 XAS data were fitted with reference spectra to obtain 4-fold coordination concentrations (in differing symmetries) and 6-fold coordination concentrations with respect to alloy composition and annealing. Analyzing the concentrations allowed us to draw conclusions on coordination with respect to alloy composition and annealing. We were able to model the 4-fold in solution to 6-fold phase-segregated conversion as a stochastic process, and we found a complete conversion to 6-fold phase-segregated TiO 2 through annealing with at least 36% Ti and above. We attributed this phase segregation to a striation effect previously reported in the literature. XAS OK1 spectra corroborate these results. Investigation of the XPS Ti L 2,3 data verified the formal Ti valence in the Ti silicate alloys as +4. Through atomic-multiplet calculations, we show that because of Coulombic and spin orbit effects the final states of the Ti L2,3 spectra do not maintain any significant degeneracy, even in the absence of a crystal field. Dielectric functions from 1.5 to 9.0 eV, extracted from the SE data obtained on annealed Ti silicate alloys, verified that significant coordination change occurred between the annealing temperature of 500 and 700 C. A local atomic multiplet theory was applied to investigate the Ga3d shallow core-level spectra of GaP, GaAs, GaSb, GaSe, and GaAs1-xP x. This is a novel application of an existing theory that is typically used for higher-energy transitions. We modeled these spectra quantitatively as a Ga+3 closed-shell ion affected by perturbations on 3d hole-4p electron final states, specifically spin-orbit effects on the hole and electron, and a crystal-field effect on the hole. The crystal-field perturbation arises from the surrounding bond charges and positive ligand anions. Radial-strength parameters were obtained through a least-squares process, and general trends identified with respect to anion electronegativity. Primary conclusion drawn is that the crystal-field effect, in addition to the spin-orbit interaction, plays a significant role in breaking d-level degeneracy, and consequently is necessary to understand shallow 3d core level spectra.

  12. Thermodynamics of Ca-Ga alloys

    SciTech Connect

    Prabhakara Reddy, B.; Babu, R.; Nagarajan, K.; Vasudeva Rao, P.R.

    1999-06-01

    The enthalpies of formation of the intermetallic compounds CaGa{sub 4}, Ca{sub 3}Ga{sub 8}, and CaGa{sub 2}, at 298.15 K, were determined by high-temperature liquid gallium solution calorimetric measurements to be {minus}24.9 {+-} 4.9 kJ{center_dot}g at.{sup {minus}1}, {minus}25.4 {+-} 2.4 kJ{center_dot}g at.{sup {minus}1}, and {minus}38.8 {+-} 4.8 kJ{center_dot}g at.{sup {minus}1}, respectively. The integral enthalpy of mixing of the (Ca-Ga) liquid alloys ({Delta}H{sup 0}) measured at 1309 K are described by the following Redlich-Kister equation: ({Delta}H{sup 0}) = x{sub Ca} (1 {minus} x{sub Ca}) f(y) with f(y) = 48.00y{sup 2} {minus} 9.34y {minus} 161.16 and y = x{sub Ca} {minus} x{sub Ga}. The partial enthalpy of calcium in gallium at infinite dilution ({Delta}(bar H){sub Ca}{sup 0}), deduced from the measured integral enthalpies of mixing at 1309 K, is {minus}104.8 {+-} 1.7 kJ{center_dot}g at.{sup {minus}1}, which is in very good agreement with that derived from the gallium solution calorimetric measurements at 1074 K ({minus}108.2 {+-} 6.9 kJ{center_dot}g at.{sup {minus}1}).

  13. Spintronics: Towards room temperature ferromagnetic devices via manganese and rare earth doped gallium nitride

    NASA Astrophysics Data System (ADS)

    Luen, Melvyn Oliver

    Spintronics is a multidisciplinary field aimed at the active manipulation of spin degrees of freedom in solid-state systems. The goal being the understanding of the interaction between the particle spin and its solid-state environment, and the making of useful devices based on the acquired knowledge. If Moore's law is to continue, then we need to find alternatives to conventional microelectronics. Where conventional electronic devices rely on manipulating charge to produce desired functions, spintronic devices would manipulate both the charge flow and electron spin within that flow. This would add an extra degree of freedom to microelectronics and usher in the era of truly nanoelectronic devices. Research aimed at a whole new generation of electronic devices is underway by introducing electron spin as a new or additional physical variable, and semiconductor devices that exploit this new freedom will operate faster and more efficiently than conventional microelectronic devices and offer new functionality that promises to revolutionize the electronics industry. Long recognized as the material of choice for next-generation solid-state lighting, gallium nitride (GaN) also has proven uses in the field of high power, high frequency field-effect transistors (FETs). But its promise as a material system for spintronic applications may be its ultimate legacy. In this dissertation, the growth of gallium-manganese-nitride (GaMnN) compound semiconductor alloy was investigated through the use of an in-house built metal-organic chemical vapor deposition (MOCVD) reactor. Building on previous investigations of ferromagnetic mechanisms in GaMnN, where ferromagnetism was shown to be carrier mediated, a above room temperature ferromagnetic GaMnN i-p-n diode structure was conceived. This device proved to be the first of its kind in the world, where ferromagnetic properties are controlled via proximity of the mediating holes, upon voltage bias of adjacent structure layers. Simultaneously, post-growth diffusion of ferromagnetic, rare earth species into GaN template thin films also was investigated. Structural, electrical, optical and magnetic characterization of diffused films grown on sapphire was performed. Optimization of the conditions leading to the first successful diffusion of neodymium into GaN thin films, and the magnetic and optical studies that followed are detailed. A mechanism governing and conditions promoting ferromagnetism in rare earth (RE) doped GaN is proposed. The magnetic relationship between two similar and dissimilar rare earth elements, in a single GaN crystal are investigated. Finally, spin valve and magnetic tunnel junction devices based on the magnetic properties of RE-GaN thin films are investigated.

  14. Failure of Gallium-67 scintigraphy to identify reliably noninfectious interstitial nephritis: concise communication

    SciTech Connect

    Graham, G.D.; Lundy, M.M.; Moreno, A.J.

    1983-07-01

    Gallium-67 scintigraphy has been reported to be useful in the diagnosis of noninfectious interstitial nephritis. We studied 12 patients with Ga-67 citrate that were diagnosed as having noninfectious interstitial nephritis on renal biopsy. Only seven of the twelve patients with interstitial nephritis on biopsy were scan-positive. Gallium-67 scintigraphy may not reliably identify noninfectious interstitial nephritis.

  15. Low temperature recombination and trapping analysis in high purity gallium arsenide by microwave photodielectric techniques

    NASA Technical Reports Server (NTRS)

    Khambaty, M. B.; Hartwig, W. H.

    1972-01-01

    Some physical theories pertinent to the measurement properties of gallium arsenide are presented and experimental data are analyzed. A model for explaining recombination and trapping high purity gallium arsenide, valid below 77 K is assembled from points made at various places and an appraisal is given of photodielectric techniques for material property studies.

  16. Unexpected gallium uptake in benign pulmonary pathology. Report of two cases

    SciTech Connect

    McLean, R.G.; Choy, D.; Murray, I.P.

    1984-12-01

    Two cases in which pulmonary gallium uptake was demonstrated in benign conditions are reported. In one, the abnormality permitted localization of a benign mesothelioma, while in the other patient it was associated with pulmonary fibrosis resulting from therapeutic irradiation. These cases extend the causes of gallium accumulation in which neither malignancy nor infection is responsible.

  17. The development and implementation of industrial hydrometallurgical gallium recovery of the Clarksville Refinery waste residue

    NASA Astrophysics Data System (ADS)

    Fayram, Todd S.

    Todd Fayram, the Gordonsville Operation of Pasminco US Inc., and the Center for Advanced Mineral and Metallurgical Processing (CAMP) at Montana Tech studied, developed and implemented a pilot scale hydrometallurgical facility for the industrial recovery of gallium. This thesis describes the testing and engineering program that culminated in this successful recovery of gallium through process described herein.

  18. Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium

    DOEpatents

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2000-01-01

    Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

  19. Synthesis and characterization of functional multicomponent nanosized gallium chelated gold crystals.

    PubMed

    Zambre, Ajit; Silva, Francisco; Upendran, Anandhi; Afrasiabi, Zahra; Xin, Yan; Paulo, Antnio; Kannan, Raghuraman

    2014-03-28

    In this communication, we describe a novel synthetic method for fabricating multicomponent gold nanoparticles containing both gallium ions and biomolecules on the surface. Detailed compositional analysis, using STEM-HAADF and EELS spectroscopy, confirmed the crystalline nature of gold and chelation of gallium ions. The presence of the biomolecule was validated using conventional ELISA. PMID:24480799

  20. Preparation of radiopharmaceuticals labeled with gallium and indium: Progress report, June 1, 1986--June 30, 1989

    SciTech Connect

    Welch, M.J.

    1989-06-01

    This project was designed to carry out routine production of Ga-68 labeled radiopharmaceuticals for use, particularly in pulmonary studies; to continue work on the development of Ga-68 labeled radiopharmaceuticals that could be used with positron emission tomography; to evaluate indium-111 and possibly gallium-68 labeled antibodies in animal models; to continue development of new chelates and bifunctional chelates for use as radiopharmaceuticals; and to develop new approaches to the delivery of radiopharmaceuticals to the brain. We have made major advances in all of these areas. In area one, we have shown that gallium-68 radiopharmaceuticals can be produced routinely under robotic control for patient studies. This has resulted in several publications by us and by our collaborators in the Pulmonary Division at Washington University. In the second area, we have continued to study gallium-68 labeled radiopharmaceuticals and have carried out the work to allow gallium-68 labeled macroaggregated albumin to be administered to patients. This was necessary due to the fact that our previous gallium-68 particulate tracer, gallium-68 labeled microspheres could not be prepared due to the fact that the microsphere kit from 3M was removed from the market. In the area of labeled antibodies we have studied indium-111 labeled antibodies in two animal models and compared gallium-68 labeled antibodies with indium and iodine antibodies in one of these models. It appears that gallium-68 labeled antibody fragments may have promise as radiopharmaceuticals.

  1. PLUTONIUM ALLOYS

    DOEpatents

    Chynoweth, W.

    1959-06-16

    The preparation of low-melting-point plutonium alloys is described. In a MgO crucible Pu is placed on top of the lighter alloying metal (Fe, Co, or Ni) and the temperature raised to 1000 or 1200 deg C. Upon cooling, the alloy slug is broke out of the crucible. With 14 at. % Ni the m.p. is 465 deg C; with 9.5 at. % Fe the m.p. is 410 deg C; and with 12.0 at. % Co the m.p. is 405 deg C. (T.R.H.) l6262 l6263 ((((((((Abstract unscannable))))))))

  2. The Inhibition of Escherichia coli Biofilm Formation by Gallium Nitrate-Modified Titanium.

    PubMed

    Zhu, Yuanyuan; Qiu, Yan; Chen, Ruiqi; Liao, Lianming

    2015-08-01

    Periprosthetic infections are notoriously difficult to treat due to biofilm formation. Previously, we reported that gallium-EDTA attached to PVC (polyvinyl chloride) surface could prevent bacterial colonization. Herein we examined the effect of this gallium-EDTA complex on Escherichia coli biofilm formation on titanium. It was clearly demonstrated that gallium nitrate significantly inhibited the growth and auto-aggregation of Escherichia coli. Furthermore, titanium with gallium-EDTA coating resisted bacterial colonization as indicated by crystal violet staining. When the chips were immersed in human serum and incubated at 37 °C, they demonstrated significant antimicrobial activity after more than 28 days of incubation. These findings indicate that gallium-EDTA coating of implants can result in a surface that can resist bacterial colonization. This technology holds great promise for the prevention and treatment of periprosthetic infections. PMID:26369125

  3. Pulmonary Kaposi sarcoma in patients with AIDS: Scintigraphic diagnosis with sequential thallium and gallium scanning

    SciTech Connect

    Lee, V.W.; Fuller, J.D.; O'Brien, M.J.; Parker, D.R.; Cooley, T.P.; Liebman, H.A. )

    1991-08-01

    Pulmonary Kaposi sarcoma associated with acquired immunodeficiency syndrome (AIDS) is difficult to diagnose because the clinical presentations and radiographic findings are nonspecific. The authors report three proved cases of AIDS-associated pulmonary Kaposi sarcoma diagnosed with sequential thallium and gallium scans. These scans demonstrated abnormal increase of pulmonary thallium uptake, whereas the gallium uptake was negative. In the authors' experience and in reports in the radiology literature, infected areas of the chest are generally thallium-negative on the delayed (3-hour) scans but are gallium-avid, whereas lymphomas are both thallium- and gallium-avid. The authors conclude that sequential thallium and gallium scans can be used to help diagnose pulmonary Kaposi sarcoma and distinguish it from other common AIDS-associated chest complications such as lymphoma and infections.

  4. Investigation of the variations in the crystallization front shape during growth of gadolinium gallium and terbium gallium crystals by the Czochralski method

    SciTech Connect

    Budenkova, O. N. Vasiliev, M. G.; Yuferev, V. S.; Ivanov, I. A.; Bul'kanov, A. M.; Kalaev, V. V.

    2008-12-15

    Numerical investigation of the variations in the crystallization front shape during growth of gadolinium gallium and terbium gallium garnet crystals in the same thermal zone and comparison of the obtained results with the experimental data have been performed. It is shown that the difference in the behavior of the crystallization front during growth of the crystals is related to their different transparency in the IR region. In gadolinium gallium garnet crystals, which are transparent to thermal radiation, a crystallization front, strongly convex toward the melt, is formed in the growth stage, which extremely rapidly melts under forced convection. Numerical analysis of this process has been performed within the quasistationary and nonstationary models. At the same time, in terbium gallium garnet crystals, which are characterized by strong absorption of thermal radiation, the phase boundary shape changes fairly smoothly and with a small amplitude. In this case, as the crystal is pulled, the crystallization front tends to become convex toward the crystal bulk.

  5. Measurement of achievable plutonium decontamination from gallium by means of PUREX solvent extraction

    SciTech Connect

    Collins, E.D.; Campbell, D.O.; Felker, L.K.

    2000-01-01

    The objective of the work described herein was to measure, experimentally, the achievable decontamination of plutonium from gallium by means of the PUREX solvent extraction process. Gallium is present in surplus weapons-grade plutonium (WG-Pu) at a concentration of approximately 1 wt%. Plans are to dispose of surplus WG-Pu by converting it to UO{sub 2}-PuO{sub 2} mixed oxide (MOX) fuel and irradiating it in commercial power reactors. However, the presence of high concentrations of gallium in plutonium is a potential corrosion problem during the process of MOX fuel irradiation. The batch experiments performed in this study were designed to measure the capability of the PUREX solvent extraction process to separate gallium from plutonium under idealized conditions. Radioactive tracing of the gallium with {sup 72}Ga enabled the accurate measurement of low concentrations of extractable gallium. The experiments approximated the proposed flowsheet for WG-Pu purification, except that only one stage was used for each process: extraction, scrubbing, and stripping. With realistic multistage countercurrent systems, much more efficient separations are generally obtained. The gallium decontamination factor (DF) obtained after one extraction stage was about 3 x 10{sup 6}. After one scrub stage, all gallium measurements were less than the detection limit, which corresponded to DFs >5 x 10{sup 6}. All these values exceed a 10{sup 6} DF needed to meet a hypothetical 10-ppb gallium impurity limit in MOX fuel. The results of this study showed no inherent or fundamental problem with regard to removing gallium from plutonium.

  6. Potential use of gallium-doped phosphate-based glass material for periodontitis treatment.

    PubMed

    Sahdev, Rohan; Ansari, Tahera I; Higham, Susan M; Valappil, Sabeel P

    2015-07-01

    This study aimed at evaluating the potential effect of gallium-incorporated phosphate-based glasses towards periodontitis-associated bacteria, Porphyromonas gingivalis, and matrix metalloproteinase-13. Periodontitis describes a group of inflammatory diseases of the gingiva and supporting structures of the periodontium. They are initiated by the accumulation of plaque bacteria, such as the putative periodontal pathogen Porphyromonas gingivalis, but the host immune response such as elevated matrix metalloproteinases are the major contributing factor for destruction of periodontal tissues. Antibacterial assays of gallium-incorporated phosphate-based glasses were conducted on Porphyromonas gingivalis ATCC 33277 using disc diffusion assay on fastidious anaerobe agar and liquid broth assay in a modified tryptic soy broth. In vitro study investigated the effect of gallium on purified recombinant human matrix metalloproteinase-13 activity using matrix metalloproteinase assay kit. In vivo biocompatibility of gallium-incorporated phosphate-based glass was evaluated in rats as subcutaneous implants. Antibacterial assay of gallium displayed activity against Porphyromonas gingivalis (inhibition zone of 22??0.5?mm compared with 0?mm for control glass, c-PBG). Gallium in the glass contributed to growth inhibitory effect on Porphyromonas gingivalis (up to 1.30 reductions in log?10 values of the viable counts compared with control) in a modified tryptic soy broth. In vitro study showed gallium-incorporated phosphate-based glasses inhibited matrix metalloproteinase activity significantly (p???0.01) compared with c-PBG. Evaluation of in vivo biocompatibility of gallium-incorporated phosphate-based glasses in rats showed a non-toxic and foreign body response after 2 weeks of implantation. The results indicate that gallium ions might act on multiple targets of biological mechanisms underlying periodontal disease. Moreover, gallium-incorporated phosphate-based glasses are biocompatible in a rat model. The findings warrant further investigation and will have important clinical implications in the future treatment and management of periodontitis. PMID:25681404

  7. Modified silicon-germanium alloys with improved performance. [thermoelectric material

    NASA Technical Reports Server (NTRS)

    Pisharody, R. K.; Garvey, L. P.

    1978-01-01

    This paper discusses the results of a program on the modification of silicon-germanium alloys by means of small extraneous material additions in order to improve their figures-of-merit. A review of the properties that constitute the figure-of-merit indicates that it is the relatively high thermal conductivity of silicon-germanium alloys that is responsible for their low values of figure-of-merit. The intent of the effort discussed in this paper is therefore the reduction of the thermal conductivity of silicon-germanium alloys by minor alloy additions and/or changes in the basic structure of the material. Because Group III and V elements are compatible with silicon and germanium, the present effort in modifying silicon-germanium alloys has concentrated on additions of gallium phosphide. A significant reduction in thermal conductivity, approximately 40 to 50 percent, has been demonstrated while the electrical properties are only slightly affected as a result. The figure-of-merit of the resultant material is enhanced over that of silicon-germanium alloys and when fully optimized is potentially better than that of any other presently available thermoelectric material.

  8. BRAZING ALLOYS

    DOEpatents

    Donnelly, R.G.; Gilliland, R.G.; Slaughter, G.M.

    1962-02-20

    A brazing alloy is described which, in the molten state, is characterized by excellent wettability and flowability and is capable of forming a corrosion-resistant brazed joint. At least one component of said joint is graphite and the other component is a corrosion-resistant refractory metal. The brazing alloy consists essentially of 40 to 90 wt % of gold, 5 to 35 wt% of nickel, and 1 to 45 wt% of tantalum. (AEC)

  9. Aluminum and gallium hydrazides as precursors to metal nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Peters, David Walter

    2000-10-01

    The solution phase reaction chemistry of aluminum and gallium alkyls with a variety of hydrazines has been explored. Substitution patterns include unsubstituted, symmetric and unsymmetric disubstituted and monosubstituted hydrazines. Both the size and the electronic characteristics of the hydrazine substituents were varied. All three factors---size, electronics, and pattern---were found to influence the initial reaction products and subsequent thermolysis products. In most cases, the first product isolated was a Lewis acid-base adduct which was characterized by spectroscopic methods. Thermolysis of the adduct led to elimination of alkane from the metal and the formation of a new product which was characterized crystallographically. In the case of unsymmetric disubstituted hydrazines, the product was determined to be a dimeric ring of the formula (R2MNHNR'2)2. Bulky monosubstituted hydrazines led to a dimeric ring as well while further thermolysis resulted in a second alkane elimination and the formation of a cage structure with the formula (RMNHNR')4. Monosubstituted hydrazines with smaller substituents, formed a double-ringed complex of the formula ((R2Ga)2NHNHR')2NHNR ' upon thermolysis with gallium alkyls. Evidence for the reduction of acetonitrile with Me3Ga and unsubstituted hydrazine was observed, and the product characterized by X-ray crystallography. With one exception, symmetric disubstituted hydrazines formed symmetric products upon reaction with gallium or aluminum alkyls. The exception, Et3Al, formed an aluminum-nitrogen cubane upon thermolysis with 1,2-diphenylhydrazine. The addition of a second equivalent of alkyl metal to the dimers described above led to a new species, (Me3M)2:(Me2MNHNMe 2)2, with both covalent and dative bonds, or a ladder type compound, (Me2NN(Me2Al)2MeAlNNMe2) 2, if Me3Al was added to the aluminum dimer. In addition, a mixed metal compound of the formula (Me2MNHNMe2) 2 M = Ga/Al was synthesized by simple mixing of the dimers in solution. Thermal degradation of the products characterized above was carried out by thermogravimetric analyses and bulk scale thermolysis under a variety of gasses. The results were evaluated by X-ray powder diffraction. Gallium nitride formation was demonstrated with several of the products at temperatures as low as 600C.

  10. Microwave dielectric constants of silicon, gallium arsenide, and quartz

    SciTech Connect

    Seeger, K.

    1988-06-01

    For a determination of the dielectric constants epsilon of semiconductors, a microwave transmission interference method has been applied. For the first time, a calculation is presented which yields the full interference spectrum, not only the position of the extremal points. A comparison of the theoretical and experimental spectra results in a higher precision than previously obtained. A metal evaporation of the sample faces which are in contact with the waveguide walls turns out to be very important. Relative dielectric constants of 11.6 for silicon, 12.8 for gallium arsenide, and 4.6 for crystalline quartz, all +- 0.05, have been obtained.

  11. Spectroscopy of vanadium (III) doped gallium lanthanum sulphide chalcogenide glass

    NASA Astrophysics Data System (ADS)

    Hughes, M.; Rutt, H.; Hewak, D.; Curry, R. J.

    2007-01-01

    Vanadium doped gallium lanthanum sulphide glass (V:GLS) displays three absorption bands at 580, 730, and 1155nm identified by photoluminescence excitation measurements. Broad photoluminescence, with a full width at half maximum of 500nm, is observed peaking at 1500nm when exciting at 514, 808, and 1064nm. The fluorescence lifetime and quantum efficiency at 300K were measured to be 33.4?s and 4%, respectively. From the available spectroscopic data, the authors propose the vanadium ions' valence to be 3+ and be in tetrahedral coordination. The results indicate a potential for the development of a laser or optical amplifier based on V:GLS.

  12. Two gallium antimony sulfides built on a novel heterometallic cluster.

    PubMed

    Feng, Mei-Ling; Xie, Zai-Lai; Huang, Xiao-Ying

    2009-05-01

    Two gallium antimony sulfides, [Ni(en)(3)][Ga(2)Sb(2)S(7)] (1) and [(Me)(2)NH(2)](2)[Ga(2)Sb(2)S(7)] (2), have been prepared under mild solvothermal conditions. Both structures feature a two-dimensional network in which two GaS(4) tetrahedra and two SbS(3) trigonal pyramids are combined to form a heterometallic cluster of {Ga(2)Sb(2)S(9)} as a new secondary building unit. The thermal properties of 1 and 2 have been studied by thernogravimetric analysis, and the optical properties of 1 and 2 have been characterized by UV-vis spectra. PMID:19331385

  13. Improved performance design of gallium arsenide solar cells for space

    NASA Technical Reports Server (NTRS)

    Parekh, R. H.; Barnett, A. M.

    1984-01-01

    An improved design, shallow junction heteroface, n-p, gallium arsenide solar cell for space applications is reported, with a predicted AM0 efficiency in the 21.9 to 23.0 percent range. The optimized n-p structure, while slightly more efficient, has the added advantage of being less susceptible to radiation-induced degradation by virtue of this thin top junction layer. Detailed spectral response curves and an analysis of the loss mechanisms are reported. The details of the design are readily measurable. The optimized designs were reached by quantifying the dominant loss mechanisms and then minimizing them by using computer simulations.

  14. Interdiffusion of magnesium and iron dopants in gallium nitride

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Tomonobu; Kitatani, Takeshi; Terano, Akihisa; Mochizuki, Kazuhiro

    2015-03-01

    The interdiffusion of magnesium and iron in gallium nitride (GaN), i.e., magnesium-iron interdiffusion, was investigated using magnesium-doped GaN layers on iron-doped GaN substrates. The investigation confirms that the magnesium-iron interdiffusion strongly depends on the concentrations of magnesium and iron, that is, it occurs when the iron and magnesium concentrations are high (magnesium: 2 × 1020 cm-3 iron: 2 × 1019 cm-3). It also confirms that diffused iron in the magnesium-doped GaN layer acts as a nonradiative recombination center in GaN.

  15. Gallium uptake in tryptophan-related pulmonary disease

    SciTech Connect

    Kim, S.M.; Park, C.H.; Intenzo, C.M.; Patel, R. )

    1991-02-01

    We describe a patient who developed fever, fatigue, muscle weakness, dyspnea, skin rash, and eosinophilia after taking high doses of tryptophan for insomnia for two years. A gallium-67 scan revealed diffuse increased uptake in the lung and no abnormal uptake in the muscular distribution. Bronchoscopy and biopsy confirmed inflammatory reactions with infiltration by eosinophils, mast cells, and lymphocytes. CT scan showed an interstitial alveolar pattern without fibrosis. EMG demonstrated diffuse myopathy. Muscle biopsy from the right thigh showed an inflammatory myositis with eosinophilic and lymphocytic infiltrations.

  16. Bulk GaN growth by Gallium Vapor Transport technique

    NASA Astrophysics Data System (ADS)

    Wu, Huaqiang; Konkapaka, Phanikumar; Makarov, Yuri; Spencer, Michael G.

    2005-05-01

    GaN crystals were grown in a dedicated, resistively heated reactor at 1165 C and 600 Torr. In this approach, gaseous gallium was obtained by the decomposition of GaN powder while nitrogen was provided from the dissociation of ammonia. GaN was grown at a rate of exceeding 200 ?m/hr by using this stable Ga source. GaN single crystals grown using this method were extensively characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Secondary Ion Mass Spectrometry (SIMS), and Glow Discharge Mass Spectrometry (GDMS).

  17. Testing of gallium arsenide solar cells on the CRRES vehicle

    NASA Technical Reports Server (NTRS)

    Trumble, T. M.

    1985-01-01

    A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage.

  18. Magnetohydrodynamic damping of convective flows in molten gallium

    NASA Astrophysics Data System (ADS)

    Hof, B.; Juel, A.; Mullin, T.

    2003-05-01

    We report the results of an experimental study of magnetohydrodynamic damping of sidewall convection in a rectangular enclosure filled with gallium. In particular we investigate the suppression of convection when a steady magnetic field is applied separately in each of the three principal directions of the flow. The strongest damping of the steady flow is found for a vertical magnetic field, which is in agreement with theory. However, we observe that the application of a field transverse to the flow provides greater damping than a longitudinal one, which seems to contradict available theory. We provide a possible resolution of this apparent dichotomy in terms of the length scale of the experiment.

  19. Study on natural convection capability of liquid gallium for passive decay heat removal system (PDHRS)

    SciTech Connect

    Kang, S.; Ha, K. S.; Lee, S. W.; Park, S. D.; Kim, S. M.; Seo, H.; Kim, J. H.; Bang, I. C.

    2012-07-01

    The safety issues of the SFRs are important due to the fact that it uses sodium as a nuclear coolant, reacting vigorously with water and air. For that reason, there are efforts to seek for alternative candidates of liquid metal coolants having excellent heat transfer property and to adopt improved safety features to the SFR concepts. This study considers gallium as alternative liquid metal coolant applicable to safety features in terms of chemical activity issue of the sodium and aims to experimentally investigate the natural convection capability of gallium as a feasibility study for the development of gallium-based passive safety features in SFRs. In this paper, the design and construction of the liquid gallium natural convection loop were carried out. The experimental results of heat transfer coefficient of liquid gallium resulting in heat removal {approx}2.53 kW were compared with existing correlations and they were much lower than the correlations. To comparison of the experimental data with computer code analysis, gallium property code was developed for employing MARS-LMR (Korea version of RELAP) based on liquid gallium as working fluid. (authors)

  20. Technetium-99m DTPA aerosol and gallium scanning in acquired immune deficiency syndrome

    SciTech Connect

    Picard, C.; Meignan, M.; Rosso, J.; Cinotti, L.; Mayaud, C.; Revuz, J.

    1987-07-01

    In 11 non-smoking AIDS patients suspected of pneumocystis carinii pneumonia (PCP), the results of Tc-99m DTPA aerosol clearances, gallium scans, and arterial blood gases were compared with those of bronchoalveolar lavage (BAL). Nine patients had PCP. All had increased clearances five times higher than the normal (5.6 +/- 2.3% X min-1 vs 1.1 +/- 0.34% X min-1, N = 10, P less than 0.001), suggesting an increased alveolar permeability. Gallium scans were abnormal in six patients but normal or slightly abnormal in the three others. Four of these nine patients had normal chest x-rays. In two of these the gallium scan was abnormal, but in the two others, only the increased Tc-99m DTPA clearances showed evidence of lung disease. Two patients had normal BAL, with normal clearances and gallium scans. Four out of the nine patients with PCP were studied after treatment. Three recovered and had normal clearance and gallium scans. One still had PCP with increased clearance but normal gallium scan. Gallium scanning and Tc-99m DTPA clearance are useful for detecting lung disease in AIDS patients with suspected PCP and for prompting BAL when chest x-rays and PaO/sub 2/ levels are normal. Due to its high sensitivity, a normal Tc-99m DTPA clearance could avoid BAL.

  1. Tomographic gallium-67 citrate scanning: useful new surveillance for metastatic melanoma

    SciTech Connect

    Kirkwood, J.M.; Myers, J.E.; Vlock, D.R.; Neumann, R.; Ariyan, S.; Gottschalk, A.; Hoffer, P.

    1982-11-01

    Conventional gallium scans are not useful to evaluate patients with metastatic melanoma. We evaluated a new method of tomographic gallium imaging. One hundred fourteen tomographic scans were obtained in a prospective surveillance study of 67 patients over a 3-year period. Scans were evaluated and compared to findings of independent clinical evaluations. Sensitivity of gallium identification of tumor involving peripheral lymph nodes and soft tissues, abdomen, mediastinum, and osseous sites was 68% to 100%; overall sensitivity of this technique is 82% with specificity of 99% in 570 organ system assessments. Analysis of discordant findings when a site was clinically occult but gallium-positive showed gallium uptake to be true-positive in six of seven lymphatic sites, three of three lung and mediastinal sites, six of six abdominal sites, but in no brain or bone sites. Gallium lesions identified by computed tomographic scans proved to be false-positive at one lymphatic and one bone site, and false-negative at four otherwise clinically evident lymph node and soft tissue sites, seven pulmonary sites, and four brain sites. Gallium tomographic scanning provides a composite assessment of melanoma and may eliminate the need for other studies.

  2. Tomographic gallium-67 citrate scanning. Useful new surveillance for metastatic melanoma

    SciTech Connect

    Kirkwood, J.M.; Myers, J.E.; Vlock, D.R.; Neumann, R.; Ariyan, S.; Gottschalk, A.; Hoffer, P.

    1983-07-01

    Conventional gallium scans are not useful to evaluate patients with metastatic melanoma. We evaluated a new method of tomographic gallium imaging. One hundred fourteen tomographic scans were obtained in a prospective surveillance study of 67 patients over a 3-year period. Scans were evaluated and compared to findings of independent clinical evaluations. Sensitivity of gallium identification of tumor involving peripheral lymph nodes and soft tissues, abdomen, mediastinum, and osseous sites was 68% to 100%; overall sensitivity of this technique is 82% with specificity of 99% in 570 organ system assessments. Analysis of discordant findings when a site was clinically occult but gallium-positive showed gallium uptake to be true-positive in six of seven lymphatic sites, three of three lung and mediastinal sites, six of six abdominal sites, but in no brain or bone sites. Gallium lesions identified by computed tomographic scans proved to be false-positive at one lymphatic and one bone site, and false-negative at four otherwise clinically evident lymph node and soft tissue sites, seven pulmonary sites, and four brain sites. Gallium tomographic scanning provides a composite assessment of melanoma and may eliminate the need for other studies.

  3. Gallium nitride microcavities formed by photoenhanced wet oxidation

    SciTech Connect

    Peng, L.-H.; Lu, C.-Y.; Wu, W.-H.; Wang, S.-L.

    2005-10-17

    We report the formation of gallium nitride (GaN) microcavities by manipulating a photoenhanced oxidation rate difference between the polar and nonpolar crystallographic planes of GaN. When immersed in a buffered acetic (CH{sub 3}COOH) electrolyte of pH{approx}6.2 at room temperature, it is shown that the photo-oxidation can proceed at a rate that is one order of magnitude slower on the nonpolar plane of {l_brace}1100{r_brace}{sub GaN} than on the polar plane of {l_brace}0001{r_brace}{sub GaN} due to the reduced surface field action. Gallium nitride microcavities bounded by optically smooth {l_brace}1100{r_brace} and {l_brace}1103{r_brace} facets can thus be preferentially formed on the c-plane sapphire substrate after dissolving the oxide layer. The optical properties of these GaN hexagonal cavities reveal characteristic peaks of whispering gallery modes in resonance with the GaN band edge emission spectrum. A typical cavity Q factor of 10{sup 3} is observed in these GaN microcavities due to a reduced optical scattering loss in the wet chemical reaction process.

  4. Exciton pumping across type-I gallium chalcogenide heterojunctions

    NASA Astrophysics Data System (ADS)

    Cai, Hui; Kang, Jun; Sahin, Hasan; Chen, Bin; Suslu, Aslihan; Wu, Kedi; Peeters, Francois; Meng, Xiuqing; Tongay, Sefaattin

    2016-02-01

    Quasi-two-dimensional gallium chalcogenide heterostructures are created by transferring exfoliated few-layer GaSe onto bulk GaTe sheets. Luminescence spectroscopy measurements reveal that the light emission from underlying GaTe layers drastically increases on heterojunction regions where GaSe layers make contact with the GaTe. Density functional theory (DFT) and band offset calculations show that conduction band minimum (CBM) (valance band maximum (VBM)) values of GaSe are higher (lower) in energy compared to GaTe, forming type-I band alignment at the interface. Consequently, GaSe layers provide photo-excited electrons and holes to GaTe sheets through relatively large built-in potential at the interface, increasing overall exciton population and light emission from GaTe. Observed results are not specific to the GaSe/GaTe system but observed on GaS/GaSe heterolayers with type-I band alignment. Observed experimental findings and theoretical studies provide unique insights into interface effects across dissimilar gallium chalcogenides and offer new ways to boost optical performance by simple epitaxial coating.

  5. Low temperature solid-state synthesis of nanocrystalline gallium nitride

    SciTech Connect

    Wang, Liangbiao; Shi, Liang; Li, Qianwen; Si, Lulu; Zhu, Yongchun; Qian, Yitai

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ► GaN nanocrystalline was prepared via a solid-state reacion at relatively low temperature. ► The sizes and crystallinities of the GaN samples obtained at the different temperatures are investigated. ► The GaN sample has oxidation resistance and good thermal stability below 1000 °C. -- Abstract: Nanocrystalline gallium nitride was synthesized by a solid-state reaction of metallic magnesium powder, gallium sesquioxide and sodium amide in a stainless steel autoclave at a relatively low temperature (400–550 °C). The structures and morphologies of the obtained products were derived from X-ray powder diffraction (XRD) and transmission electron microscopy (TEM). XRD patterns indicated that the products were hexagonal GaN (JCPDS card no. 76-0703). The influence of reaction temperature on size of the products was studied by XRD and TEM. Furthermore, the thermal stability and oxidation resistance of the nanocrystalline GaN were also investigated. It had good thermal stability and oxidation resistance below 800 °C in air.

  6. Investigation of Structural Phase Transitions on Wurtzite Gallium Nitride Surfaces

    NASA Astrophysics Data System (ADS)

    Chen, Tianjiao; Chinchore, Abhijit; Liu, Yinghao; Wang, Kangkang; Lin, Wenzhi; Smith, Arthur

    2009-03-01

    Surface structures of wurtzite gallium nitride (w-GaN) have been investigated previously,[1][2] and it is well known that above 300K there exist order-disorder phase transitions. For N-polar w-GaN (000-1) at 300K, a family of surface reconstructions occurs, including 1x1, 3x3, 6x6, and c(6x12). Not much is known, however, about what happens to these structures as they are cooled below 300K. We have recently developed a new epitaxy/analysis system, including a sample stage which can be both heated and cooled. The N-polar w-GaN surfaces are prepared using rf N-plasma-assisted molecular beam epitaxy, and monitored in-situ using reflection high energy electron diffraction (RHEED). The approach is to monitor the [11-20] and [10-10] RHEED diffractions during cryogenic cooling, starting with the 1x1 or 3x3 structures. A critical issue to explore is the interrelationship between surface gallium concentration and structural deformation. This study may provide the missing link to new reconstructions of w-GaN recently observed using LT scanning tunneling microscopy.[3] This work is supported by NSF (Grant No. 0730257). [1] A. R. Smith et al., Phys. Rev. Lett. 79, 3934 (1997). [2] A. R. Smith et al., Surface Science 423, 70 (1999). [3] D. Acharya, S.-W. Hla et al., unpublished.

  7. Exciton pumping across type-I gallium chalcogenide heterojunctions.

    PubMed

    Cai, Hui; Kang, Jun; Sahin, Hasan; Chen, Bin; Suslu, Aslihan; Wu, Kedi; Peeters, Francois; Meng, Xiuqing; Tongay, Sefaattin

    2016-02-12

    Quasi-two-dimensional gallium chalcogenide heterostructures are created by transferring exfoliated few-layer GaSe onto bulk GaTe sheets. Luminescence spectroscopy measurements reveal that the light emission from underlying GaTe layers drastically increases on heterojunction regions where GaSe layers make contact with the GaTe. Density functional theory (DFT) and band offset calculations show that conduction band minimum (CBM) (valance band maximum (VBM)) values of GaSe are higher (lower) in energy compared to GaTe, forming type-I band alignment at the interface. Consequently, GaSe layers provide photo-excited electrons and holes to GaTe sheets through relatively large built-in potential at the interface, increasing overall exciton population and light emission from GaTe. Observed results are not specific to the GaSe/GaTe system but observed on GaS/GaSe heterolayers with type-I band alignment. Observed experimental findings and theoretical studies provide unique insights into interface effects across dissimilar gallium chalcogenides and offer new ways to boost optical performance by simple epitaxial coating. PMID:26759069

  8. Iron-Targeting Antitumor Activity of Gallium Compounds and Novel Insights Into Triapine-Metal Complexes

    PubMed Central

    Antholine, William E.

    2013-01-01

    Abstract Significance: Despite advances made in the treatment of cancer, a significant number of patients succumb to this disease every year. Hence, there is a great need to develop new anticancer agents. Recent Advances: Emerging data show that malignant cells have a greater requirement for iron than normal cells do and that proteins involved in iron import, export, and storage may be altered in cancer cells. Therefore, strategies to perturb these iron-dependent steps in malignant cells hold promise for the treatment of cancer. Recent studies show that gallium compounds and metal-thiosemicarbazone complexes inhibit tumor cell growth by targeting iron homeostasis, including iron-dependent ribonucleotide reductase. Chemical similarities of gallium(III) with iron(III) enable the former to mimic the latter and interpose itself in critical iron-dependent steps in cellular proliferation. Newer gallium compounds have emerged with additional mechanisms of action. In clinical trials, the first-generation-compound gallium nitrate has exhibited activity against bladder cancer and non-Hodgkin's lymphoma, while the thiosemicarbazone Triapine has demonstrated activity against other tumors. Critical Issues: Novel gallium compounds with greater cytotoxicity and a broader spectrum of antineoplastic activity than gallium nitrate should continue to be developed. Future Directions: The antineoplastic activity and toxicity of the existing novel gallium compounds and thiosemicarbazone-metal complexes should be tested in animal tumor models and advanced to Phase I and II clinical trials. Future research should identify biologic markers that predict tumor sensitivity to gallium compounds. This will help direct gallium-based therapy to cancer patients who are most likely to benefit from it. Antioxid. Redox Signal. 00, 000000. PMID:22900955

  9. A hypothesis for anti-nanobacteria effects of gallium with observations from treating kidney disease.

    PubMed

    Eby, George A

    2008-10-01

    Nanobacteria, 100-fold smaller than common bacteria, have been purported to exist in urine, and by precipitating calcium and other minerals into carbonate apatite around themselves, induce the formation of surrounding kidney stones. Nanobacteria-like structures have also been shown in blood, within arteries, aortic aneurysms, and cardiac valves. Gallium has antibiotic properties to iron-dependent bacteria and has potent anti-inflammatory, anticancer and anti-hypercalcemic properties, and it readily reverses osteoporosis. It was hypothesized that gallium nitrate might have benefit in treating kidney stones. Gallium nitrate (120mg gallium) was mixed with water making two liters of a gallium mineral water drink to treat chronic, treatment-resistant kidney stone pain and urinary tract bleeding in a 110 pound woman. On the third day of gallium mineral water treatment, the urine appeared snow white, thick (rope-like) and suggestive of a calcific crystalline nature. After release of the white urine, the urine returned to normal in color, viscosity and pH, kidney pain was no longer present, and there was no further evidence of blood in the urine. There were no treatment side effects or sequela. For a one year observation period thereafter, no kidney stones, white urine, kidney or urinary tract pain or blood in the urine was noted. The hypothetical susceptibility of nanobacteria to gallium treatment also suggests application to atherosclerosis and other diseases. Although some support for gallium in treating kidney stones is presented, this hypothesis is built upon another hypothesis, is extremely speculative, and alternative explanations for the white urine exist. Further research into gallium's effects on kidney disease and other nanobacteria-induced diseases such as cardiovascular diseases is suggested. PMID:18579317

  10. High-surface Thermally Stable Mesoporous Gallium Phosphates Constituted by Nanoparticles as Primary Building Blocks

    SciTech Connect

    V Parvulescu; V Parvulescu; D Ciuparu; C Hardacre; H Garcia

    2011-12-31

    In constant, search for micro/mesoporous materials, gallium phosphates, have attracted continued interest due to the large pore size reported for some of these solids in comparison with analogous aluminum phosphates. However up to now, the porosity of gallium phosphates collapsed upon template removal or exposure to the ambient moisture. In the present work, we describe high-surface thermally stable mesoporous gallium phosphates synthesized from gallium propoxide and PCl{sub 3} and different templating agents such as amines (dipropylamine, piperidine and aminopiperidine) and quaternary ammonium salts (C{sub 16}H{sub 33}(CH{sub 3})3NBr and C{sub 16}PyCl). These highly reactive precursors have so far not been used as gallium and phosphate sources for the synthesis of gallophosphates. Conceptually, our present synthetic procedure is based on the fast formation of gallium phosphate nanoparticles via the reaction of gallium propoxide with PCl{sub 3} and subsequent construction of the porous material with nanoparticles as building blocks. The organization of the gallophosphate nanoparticles in stable porous structures is effected by the templates. Different experimental procedures varying the molar composition of the sol-gel, pH and the pretreatment of gallium precursor were assayed, most of them leading to satisfactory materials in terms of thermal stability and porosity. In this way, a series of gallium phosphates with surface are above 200 m{sup 2} g{sup -1}, and narrow pore size from 3 to 6 nm and remarkable thermal stability (up to 550 C) have been prepared. In some cases, the structure tends to show some periodicity and regularity as determined by XRD. The remarkable stability has allowed us to test the catalytic activity of gallophosphates for the aerobic oxidation of alkylaromatics with notable good results. Our report reopens the interest for gallophosphates in heterogeneous catalysis.

  11. Electrodeposition of crystalline GaAs on liquid gallium electrodes in aqueous electrolytes.

    PubMed

    Fahrenkrug, Eli; Gu, Junsi; Maldonado, Stephen

    2013-01-01

    Crystalline GaAs (c-GaAs) has been prepared directly through electroreduction of As(2)O(3) dissolved in an alkaline aqueous solution at a liquid gallium (Ga(l)) electrode at modest temperatures (T ? 80 C). Ga(l) pool electrodes yielded consistent electrochemical behavior, affording repetitive measurements that illustrated the interdependences of applied potential, concentration of dissolved As(2)O(3), and electrodeposition temperature on the quality of the resultant c-GaAs(s). Raman spectra indicated the composition of the resultant film was strongly dependent on both the electrodeposition temperature and dissolved concentration of As(2)O(3) but not to the applied bias. For electrodepositions performed either at room temperature or with high (?0.01 M) concentrations of dissolved As(2)O(3), Raman spectra of the electrodeposited films were consistent with amorphous As(s). X-ray diffractograms of As(s) films collected after thermal annealing indicated metallurgical alloying occurred only at temperatures in excess of 200 C. Optical images and Raman spectra separately showed the composition of the as-electrodeposited film in dilute (?0.001 M) solutions of dissolved As(2)O(3)(aq) was pure c-GaAs(s) at much lower temperatures than 200 C. Diffractograms and transmission electron microscopy performed on as-prepared films confirmed the identity of c-GaAs(s). The collective results thus provide the first clear demonstration of an electrochemical liquid-liquid-solid (ec-LLS) process involving a liquid metal that serves simultaneously as an electrode, a solvent/medium for crystal growth, and a coreactant for the synthesis of a polycrystalline semiconductor. The presented data serve as impetus for the further development of the ec-LLS process as a controllable, simple, and direct route for technologically important optoelectronic materials such as c-GaAs(s). PMID:23265429

  12. Elevated temperature aluminum alloys

    NASA Technical Reports Server (NTRS)

    Meschter, Peter (Inventor); Lederich, Richard J. (Inventor); O'Neal, James E. (Inventor)

    1989-01-01

    Three aluminum-lithium alloys are provided for high performance aircraft structures and engines. All three alloys contain 3 wt % copper, 2 wt % lithium, 1 wt % magnesium, and 0.2 wt % zirconium. Alloy 1 has no further alloying elements. Alloy 2 has the addition of 1 wt % iron and 1 wt % nickel. Alloy 3 has the addition of 1.6 wt % chromium to the shared alloy composition of the three alloys. The balance of the three alloys, except for incidentql impurities, is aluminum. These alloys have low densities and improved strengths at temperatures up to 260.degree. C. for long periods of time.

  13. Phase Tuning of Nanostructured Gallium Oxide via Hybridization with Reduced Graphene Oxide for Superior Anode Performance in Li-Ion Battery: An Experimental and Theoretical Study.

    PubMed

    Patil, Sharad B; Kim, In Young; Gunjakar, Jayavant L; Oh, Seung Mi; Eom, Taedaehyeong; Kim, Hyungjun; Hwang, Seong-Ju

    2015-08-26

    The crystal phase of nanostructured metal oxide can be effectively controlled by the hybridization of gallium oxide with reduced graphene oxide (rGO) at variable concentrations. The change of the ratio of Ga2O3/rGO is quite effective in tailoring the crystal structure and morphology of nanostructured gallium oxide hybridized with rGO. This is the first example of the phase control of metal oxide through a change of the content of rGO hybridized. The calculations based on density functional theory (DFT) clearly demonstrate that the different surface formation energy and Ga local symmetry of Ga2O3 phases are responsible for the phase transition induced by the change of rGO content. The resulting Ga2O3-rGO nanocomposites show promising electrode performance for lithium ion batteries. The intermediate Li-Ga alloy phases formed during the electrochemical cycling are identified with the DFT calculations. Among the present Ga2O3-rGO nanocomposites, the material with mixed ?-Ga2O3/?-Ga2O3/?-Ga2O3 phase can deliver the largest discharge capacity with the best cyclability and rate characteristics, highlighting the importance of the control of Ga2O3/rGO ratio in optimizing the electrode activity of the composite materials. The present study underscores the usefulness of the phase-control of nanostructured metal oxides achieved by the change of rGO content in exploring novel functional nanocomposite materials. PMID:26258574

  14. Gallium scintigraphy for diagnosis of septic arthritis and osteomyelitis in children

    SciTech Connect

    Borman, T.R.; Johnson, R.A.; Sherman, F.C.

    1986-05-01

    Thirty-four children with presumptive acute osteomyelitis or septic arthritis underwent early gallium-67 citrate scintigraphy and have been retrospectively reviewed. Diagnostic accuracy using this technique was 91%. Gallium-67 citrate is a more reliable radiopharmaceutical agent for the detection of selected acute musculoskeletal infections than either technetium methylene diphosphonate or indium-111. However, the radiation dosage from gallium is higher than from other radiopharmaceutical agents, and the authors would recommend its use only in cases where the diagnosis cannot be made on the basis of clinical, laboratory, or plain roentgenographic criteria.

  15. Magnetic Domains in Magnetostrictive Fe-Ga Alloys

    SciTech Connect

    Q. Xing; T.A. Lograsso

    2008-11-03

    Lorentz microscopy was applied to the observation of magnetic domains in iron-gallium (Fe-Ga) alloys. Results did not show any link between the magnetic domains and the magnetostriction enhancement by Ga addition, but did reveal that the drastic decrease in magnetostriction for Fe-31.2 at. % Ga was due to the presence of large scale precipitates. Magnetic domain features did not change in the alloys of A2, D0{sub 3}, A2+D0{sub 3}, A2+B2+D0{sub 3}, and A2+fine scale precipitates. Large scale precipitates within the slow-cooled Fe-31.2 at. % Ga affected both the distribution and wall motion of magnetic domains.

  16. Identification of a physical metallurgy surrogate for the plutonium1 wt.?% gallium alloy

    NASA Astrophysics Data System (ADS)

    Gibbs, Frank E.; Olson, David L.; Hutchinson, William

    2000-07-01

    Future plutonium research is expected to be limited due to the downsizing of the nuclear weapons complex and an industry focus on environmental remediation and decommissioning of former manufacturing and research facilities. However, the need to further the understanding of the behavior of plutonium has not diminished. Disposition of high level residues, long-term storage of wastes, and certification of the nuclear stockpile through the Stockpile Stewardship Program are examples of the complex issues that must be addressed. Limited experimental facilities and the increasing cost of conducting plutonium research provide a strong argument for the development of surrogate materials. The purpose of this work was to identify a plutonium surrogate based on fundamental principles such as electronic structure, and then to experimentally demonstrate its viability.

  17. A study of surface tension driven segregation in monotectic alloy systems

    NASA Technical Reports Server (NTRS)

    Andrews, J. Barry; Andrews, Rosalia N.; Gowens, Terrell F.

    1988-01-01

    The compatibilities of various monotectic alloy systems with several different crucible materials were evaluated. The study was carried out using small candidate alloy samples of compositions that produced fifty volume percent of each liquid phase at the monotectic temperature. Compatibility was based on the evaluation of the wetting tendency of the two immiscible phases with the crucible material in a one-g solidified sample. Three types of wetting phenomena were observed during the evaluation. Type 1 indicates an alloy-crucible combination where the L2 phase preferentially wets the crucible material. Since L2 is usually the minority phase in desirable alloys, this material combination would be difficult to process and is therefore considered incompatible. Type 2 behavior indicates an alloy-crucible combination where the L1 phase preferentially wets the crucible material. This type of combination is considered compatible since surface tension effects should aid in processing the alloy to a useful form. Type 3 indicates any combination that leads to major reactions between the alloy and crucible material, gas entrapment, or separation of the metal from the crucible wall. Additional compatibility evaluations would have to be carried out on combinations of this category. The five alloy systems studied included aluminum-bismuth, copper-lead, aluminum-indium, aluminum-lead and cadmium-gallium. The systems were combined with crucibles of alumina, boron nitride, mullite, quartz, silicon carbide and zirconia.

  18. Gallium Content in PuO{sub 2} Using Laser Induced Breakdown Spectroscopy (LIBS)

    SciTech Connect

    Smith, C.A.; Martinez, M.A.; Veirs, D.K.

    1999-08-29

    Laser Induced Breakdown Spectroscopy (LIBS) has been applied to the semi-quantitative analysis of gallium in plutonium oxide at the Los Alamos Plutonium Facility. The oxide samples were generated by the Thermally Induced Gallium Removal (TIGR) process, a pretreatment step prior to MOX fuel processing. The TIGR process uses PuO{sub 2} containing 1 wt% gallium (nominal) as feed material. Following the TIGR process, gallium content was analyzed by LIBS and also by conventional wet chemical analysis (ICP-MS). Although the data range was insufficient to obtain an adequate calibration, general agreement between the two techniques was good. LIBS was found to have a useful analytical range of 34-400 ppm for Ga in PuO{sub 2}.

  19. Measurement of Quantized Conductance in Gallium Using a Scanning Tunneling Microscope

    NASA Astrophysics Data System (ADS)

    Lewis, B. B.; Vandervoort, K. G.

    1998-03-01

    A scanning tunneling microscope was employed to form nanometer diameter wires in gallium in various states. Nanowires form when objects come in and out of contact, much like the filaments that form when you step on a piece of gum and pull your foot away. When nanowires form, quantized steps in conductance occur and can be measured. The low melting point of gallium was utilized to study the quantized conductance dependence on the physical state of the metal. For temperatures adequately below gallium's melting point, quantized effects are seen that correspond to other studies performed on gold, copper, and aluminum. At temperatures near the melting point of gallium, there appears to be a weaker quantum effect. By varying the type of STM tip, the dependence on the contact metal was observed. Statistical analysis of conductance steps was performed and will be discussed.

  20. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

    SciTech Connect

    Podhorodecki, A.; Banski, M.; Misiewicz, J.; Lecerf, C.; Marie, P.; Cardin, J.; Portier, X.

    2010-09-15

    Gallium oxide and more particularly {beta}-Ga{sub 2}O{sub 3} matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

  1. Empyema of the gallbladder detected by gallium scan and abdominal ultrasonography

    SciTech Connect

    Garcia, O.M.; Kovac, A.; Plauche, W.E.

    1981-08-01

    A case history of patient with a abnormal gallium uptake and sonogram in the region of the gallbladder is described. The abnormality was interpreted as empyema of the gallbladder and later proven surgically. A liver-spleen scan was normal except for slight prominence of the hilar structures. Gallium citrate Ga-67 scans done at 24 and 48 hours showed a persistent area of increased tracer localization around the gallbladder with a central clear zone in the latter scan. Ultrasonography revealed poor definition and slight thickening of the gallbladder wall. Because of the lack of specificity of gallium scans, the combination of ultrasonic imaging and gallium uptake scans appears much superior in diagnostic efficiency than either of the two alone. The sequence of performing these two examinations does not seem to be critical though it was prefered that the scintigraphy precede the sonography.

  2. Process for producing gallium-containing solution from the aluminum smelting dust

    SciTech Connect

    Era, A.; Matsui, S.; Ikeda, H.

    1988-03-01

    A process is described for producing a gallium-containing solution from aluminum smelting dust comprising leaching aluminum smelting dust with a mineral acid selected from the group consisting of sulfuric acid, hydrochloric acid and nitric acid, and adding an oxidizing agent to the aluminum smelting dust at the time of leaching to preferentially leach and extract gallium from the aluminum smelting dust without extracting aluminum from the aluminum smelting dust. The oxidizing agent is selected from the group consisting of potassium permanganate, manganese dioxide, hydrogen peroxide, ozone, potassium chromate, potassium dichromate, ammonium persulfate, sodium hydrochlorite, sodium chlorite and sodium chlorate. The leached aluminum smelting dust is filtered to obtain a gallium-containing solution of dissolved gallium.

  3. The high-temperature behaviour of gallium and indium liquid metal ion sources

    NASA Astrophysics Data System (ADS)

    Hornsey, R. I.

    1989-12-01

    Energy distribution diagrams and derived data are presented for gallium and indium liquid metal ion sources operated at elevated temperatures. Results for the gallium source confirm that a secondary peak is formed on the energy distribution diagram at source temperatures above 250C. Contrary to the findings of other research workers, data presented here show that the indium source displays similar characteristics to that of gallium. Off-axis data are also given, showing that secondary peak formation is not limited to the centre of the beam. Present hypotheses propose that secondary peak formation is the result of an increased contribution to emission by free-space field ionisation at elevated temperatures. Data presented here for the gallium and indium sources are discussed and the above hypotheses are examined. It is concluded that a field ionisation mechanism does not satisfactorily explain the form of the high temperature liquid metal ion source energy distributions.

  4. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Banski, M.; Misiewicz, J.; Lecerf, C.; Marie, P.; Cardin, J.; Portier, X.

    2010-09-01

    Gallium oxide and more particularly ?-Ga2O3 matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

  5. Gallium-67 scintigraphy, bronchoalveolar lavage, and pathologic changes in patients with pulmonary sarcoidosis

    SciTech Connect

    Abe, S.; Munakata, M.; Nishimura, M.; Tsuneta, Y.; Terai, T.; Nakano, I.; Ohsaki, Y.; Kawakami, Y.

    1984-05-01

    The intensity of gallium-67 scintiscans, lymphocyte counts in bronchoalveolar lavage fluid, and pathologic changes were studied in 26 patients with untreated pulmonary sarcoidosis. Noncaseating granulomas were recognized with significantly greater frequency in stage 2 (80 percent; 8/10 cases) than in stage 1 (43 percent; 6/14 cases). Alveolitis showed little relation to the roentgenographic stage. There was a strong correlation between the intensity of gallium uptake in pulmonary parenchyma and the detection rate of granuloma; however, the detection rate of alveolitis was not statistically different from the intensity of gallium uptake. A highly significant correlation was revealed between the lymphocyte counts in bronchoalveolar lavage fluid and the intensity of alveolitis. These observations suggest that the gallium uptake reflects mainly the presence of granuloma, and the lymphocyte count in bronchoalveolar lavage fluid reflects the intensity of alveolitis in patients with pulmonary sarcoidosis.

  6. Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

  7. The clinical value of bone and gallium scintigraphy for soft-tissue sarcomas of the extremities

    SciTech Connect

    Kirchner, P.T.; Simon, M.A.

    1984-03-01

    In a prospective study of forty-five patients, we evaluated the usefulness of bone and gallium scintigraphy prior to definitive surgery for a soft-tissue sarcoma in an extremity. Bone scintigraphy provides a baseline for staging and often reveals periosteal invasion that is not detected by routine radiographs. Blood-pool scintigraphy with bone tracers is very sensitive for a diagnosis of malignant disease. Gallium scintigraphy appeared to be a reliable preoperative indicator of malignant disease of soft tissue (sensitivity, 85 per cent; specificity, 92 per cent) and was useful for detecting the infrequent occult, non-pulmonary metastasis. Combined gallium and bone scintigraphy with blood-pool imaging provided a reliable prediction of the presence or absence of a malignant lesion in patients with a soft-tissue mass in an extremity. We recommend that bone and gallium scintigraphy be routinely used in the initial clinical staging of soft-tissue sarcomas.

  8. Renal gallium accumulation in the absence of renal pathology in patients with severe hepatocellular disease

    SciTech Connect

    Alazraki, N.; Sterkel, B.; Taylor, A. Jr.

    1983-05-01

    Visualization of Ga-67 citrate in the kidneys at 48 hours and 72 hours post injection is usually interpreted as evidence of renal pathology. In reviewing approximately 200 consecutive patients referred for gallium scans, 40 patients who also underwent liver/spleen Tc-99m sulfur colloid (SC) studies within one month of the gallium study were identified. Fourteen of these patients showed advanced hepatocellular dysfunction on the Tc-99m SC liver/spleen images. Of these 14 patients, nine had persistent renal accumulation of gallium at 48 or 72 hours. Five of these nine patients had no evidence of primary renal disease by clinical or postmortem examination and subsequent clinical information indicated that two additional patients probably had no significant renal pathology. Therefore, bilateral symmetrically increased renal uptake of gallium in patients with advanced hepatocellular disease should not necessarily be interpreted as evidence of renal pathology.

  9. Morphology, mechanical stability, and protective properties of ultrathin gallium oxide coatings.

    PubMed

    Lawrenz, Frank; Lange, Philipp; Severin, Nikolai; Rabe, Jrgen P; Helm, Christiane A; Block, Stephan

    2015-06-01

    Ultrathin gallium oxide layers with a thickness of 2.8 0.2 nm were transferred from the surface of liquid gallium onto solid substrates, including conjugated polymer poly(3-hexylthiophene) (P3HT). The gallium oxide exhibits high mechanical stability, withstanding normal pressures of up to 1 GPa in contact mode scanning force microscopy imaging. Moreover, it lowers the rate of photodegradation of P3HT by 4 orders of magnitude, as compared to uncovered P3HT. This allows us to estimate the upper limits for oxygen and water vapor transmission rates of 0.08 cm(3) m(-2) day(-1) and 0.06 mg m(-2) day(-1), respectively. Hence, similar to other highly functional coatings such as graphene, ultrathin gallium oxide layers can be regarded as promising candidates for protective layers in flexible organic (opto-)electronics and photovoltaics because they offer permeation barrier functionalities in conjunction with high optical transparency. PMID:25945521

  10. Haemophilus parainfluenzae bacteremia associated with a pacemaker wire localized by gallium scan

    SciTech Connect

    Rosenbaum, G.S.; Calubiran, O.; Cunha, B.A. )

    1990-05-01

    A young woman with a history of sick sinus syndrome and placement of a permanent pacemaker 6 months before admission had fever and Haemophilus parainfluenzae bacteremia. A gallium scan localized the infection to the site of the pacemaker wire. Echocardiograms were negative for any vegetations. The patient responded to cefotaxime and trimethoprim-sulfamethoxazole therapy. We believe that this is the first case of H. parainfluenzae bacteremia associated with a pacemaker wire and localized by gallium scan.

  11. Gallium compounds in solar cells. (Latest citations from the Aerospace database). Published Search

    SciTech Connect

    Not Available

    1993-12-01

    The bibliography contains citations concerning the use of gallium compounds in solar cells to increase solar cell efficiency. Computer models, theories, and performance tests are included. Gallium compounds used in thin film cells, cascade solar cells, large area solar cells, cells designed for industrial and space applications, and as antireflection coatings are discussed. Resistance to radiation damage, cooling to improve efficiency, grain boundary behavior, and economic considerations are also covered. (Contains 250 citations and includes a subject term index and title list.)

  12. First Results of the Testing of the Liquid Gallium Jet Limiter Concept for ISTTOK

    NASA Astrophysics Data System (ADS)

    Gomes, R. B.; Fernandes, H.; Silva, C.; Borba, D.; Carvalho, B.; Varandas, C.; Lielausis, O.; Klyukin, A.; Platacis, E.; Mikelsons, A.; Platnieks, I.

    2006-12-01

    The use of liquid metals as plasma facing components in tokamaks has recently experienced a renewed interest stimulated by their advantages to the development of a fusion reactor. Liquid metals have been proposed to solve problems related to the erosion and neutronic activation of solid walls submitted to high power loads allowing an efficient heat exhaustion from fusion devices. Presently the most promising materials are Lithium and Gallium. ISTTOK, a small size tokamak, will be used to test the behavior of a liquid Gallium jet in the vacuum chamber and its influence on the plasma. This paper presents a description of the conceived setup as well as experimental results. The liquid Gallium jet is generated by hydrostatic pressure and injected in a radial position close to a moveable stainless steel limiter. Both the jet and the limiter positions are variable allowing for a controlled exposure of the liquid Gallium to the edge plasma. The main components of the Gallium loop are a MHD pump, the liquid metal injector and a filtering system. The MHD pump is of the induction type, based on rotating permanent magnets. The injector is build from a ? stainless steel pipe ended by a shaping nozzle. A setup has been developed to introduce oxide-free Gallium inside the loop's main supply tank. Raw liquid metal is placed inside a chamber heated and degassed under high vacuum while clean Gallium is extracted from the main body of the liquefied metal. Prior to installation on the tokamak, the experimental rig has been implemented using a Pyrex tube as test chamber to investigate the stability of the Gallium jet and its break-up length for several nozzle sizes. Results are presented in this paper. This rig was also useful to assess the behavior of the overall implemented apparatus.

  13. Gallium-67 scintigraphy in the evaluation of patients with clinical or laboratory evidence of hepatoma

    SciTech Connect

    Gentili, A.; Sfakianakis, G.; Jeffers, L.J.; Reddy, K.; Schiff, E.; Serafini, A.N.

    1985-05-01

    Previous reports had shown that gallium-67 accumulates in hepatoma in 70 to 100% of cases according to different authors. The authors evaluated the significance of Ga-67 scintigraphy in 50 patients, 45 cirrhotics and 5 with other problems. All the patients had either focal defects (44) or patchy uptake (6) on a Tc-99m sulphur colloid scintigram (SC). Routine Ga-67 scintigraphy (5mCi, 48-72 hours imaging, planar gamma camera, medium energy collimator, 2-3 peak energy use) was performed and evaluated in conjunction with the associated Tc-99m SC scintigraphy. Of the 50 pts. 25 had hepatomas. All of them had focal defects on Tc-99m SC scans and incongruent gallium images with either filling of the defects or hot spots. Alfafetoprotein was measured in 18 patients and was normal in 5. Of the remaining 25 pts. without hepatoma 22 had cirrhosis (16 had focal defects and 6 patchy uptake on Tc-99m SC images, but all showed congruent gallium distribution, alfafetoprotein was measured in 12 pts. and was abnormally high in 5) and 3 had abscess, lymphoma or adrenal carcinoma (all had focal defect on Tc-99m SC images and incongruent gallium distribution with hot spots filling the defects of the Tc SC scan). In the series gallium was found to be very useful in separating focal liver abnormalities on Tc-99 SCS in cirrhotics. When a lesion didn't take up gallium, no hepatoma was present. When a defects on SC scintigraphy disappeared or picked up more activity on gallium, the patient had hepatoma (25), or abscess (1), lymphoma (1), adrenal ca. (1). In no case cirrhotic scarring showed gallium uptake. Alfafetoprotein, however, was positive in 5 cirrhotics and negative in 5 hepatomas.

  14. Controlled delivery of antimicrobial gallium ions from phosphate-based glasses.

    PubMed

    Valappil, S P; Ready, D; Abou Neel, E A; Pickup, D M; O'Dell, L A; Chrzanowski, W; Pratten, J; Newport, R J; Smith, M E; Wilson, M; Knowles, J C

    2009-05-01

    Gallium-doped phosphate-based glasses (PBGs) have been recently shown to have antibacterial activity. However, the delivery of gallium ions from these glasses can be improved by altering the calcium ion concentration to control the degradation rate of the glasses. In the present study, the effect of increasing calcium content in novel gallium (Ga2O3)-doped PBGs on the susceptibility of Pseudomonas aeruginosa is examined. The lack of new antibiotics in development makes gallium-doped PBG potentially a highly promising new therapeutic agent. The results show that an increase in calcium content (14, 15 and 16 mol.% CaO) cause a decrease in degradation rate (17.6, 13.5 and 7.3 microg mm(-2) h(-1)), gallium ion release and antimicrobial activity against planktonic P. aeruginosa. The most potent glass composition (containing 14 mol.% CaO) was then evaluated for its ability to prevent the growth of biofilms of P. aeruginosa. Gallium release was found to reduce biofilm growth of P. aeruginosa with a maximum effect (0.86 log(10) CFU reduction compared to Ga2O3-free glasses) after 48 h. Analysis of the biofilms by confocal microscopy confirmed the anti-biofilm effect of these glasses as it showed both viable and non-viable bacteria on the glass surface. Results of the solubility and ion release studies show that this glass system is suitable for controlled delivery of Ga3+. 71Ga NMR and Ga K-edge XANES measurements indicate that the gallium is octahedrally coordinated by oxygen atoms in all samples. The results presented here suggest that PBGs may be useful in controlled drug delivery applications, to deliver gallium ions in order to prevent infections due to P. aeruginosa biofilms. PMID:18974026

  15. Tumoral calcinosis associated with sarcoidosis and positive bone and gallium imaging

    SciTech Connect

    Wolpe, F.M.; Khedkar, N.Y.; Gordon, D.; Werner, P.; Shirazi, P.; Al-Sabban, M.H.

    1987-07-01

    A 63-year-old female with biopsy proven tumoral calcinosis presented with progressive and recurrent swelling and tenderness of the right hip, thigh, elbow, and wrist. Both gallium and bone imaging demonstrated intense, congruent uptake in these areas. This is the third case of tumoral calcinosis with sarcoidosis documented in the literature. However, these are the first published bone and gallium scans in a patient with a history of sarcoidosis and tumoral calcinosis.

  16. Heterotopic ossification (myositis ossificans) in acquired immune deficiency syndrome. Detection by gallium scintigraphy

    SciTech Connect

    Drane, W.E.; Tipler, B.M.

    1987-06-01

    A case of heterotopic ossification (myositis ossificans) secondary to the central nervous system complications of acquired immune deficiency syndrome (AIDS) is reported. Because of the overwhelming suspicion of infection in this patient, this diagnosis was not considered until a gallium scan revealed the typical findings of heterotopic ossification. Because of the increasing utilization of gallium imaging in the AIDS population, every imaging specialist should be aware of this potential disorder.

  17. Gallium scanning and tomography in the preoperative evaluation of lung cancer

    SciTech Connect

    Santiago, S.; Houston, D.; Ezer, J.; Rose, J.; Nagai, E.; Williams, A.

    1986-07-15

    Discrepant reports on the utility of gallium scanning in the preoperative evaluation of patients with lung cancer prompted a prospective study of the test. The authors studied 47 patients with lung cancer who underwent preoperative gallium scanning and frontal tomography of the mediastinum. Both tests were found to be most accurate in predicting the presence of mediastinal metastases among patients with squamous cell carcinoma. Both test may help direct surgical planning in patients with known squamous cell carcinoma of the lung.

  18. Bit-systolic arithmetic arrays using dynamic differential gallium arsenide circuits

    NASA Technical Reports Server (NTRS)

    Beagles, Grant; Winters, Kel; Eldin, A. G.

    1992-01-01

    A new family of gallium arsenide circuits for fine grained bit-systolic arithmetic arrays is introduced. This scheme combines features of two recent techniques of dynamic gallium arsenide FET logic and differential dynamic single-clock CMOS logic. The resulting circuits are fast and compact, with tightly constrained series FET propagation paths, low fanout, no dc power dissipation, and depletion FET implementation without level shifting diodes.

  19. Determination of Hg traces in gallium by anodic stripping voltametry on glassy carbon

    SciTech Connect

    Pezzatini, G.; Pergola, F.

    1986-01-01

    An A.S.V. (anodic stripping voltametry) method for determination of mercury in ultrapure gallium has been developed. The procedure is very simple and allows a sensitivity high enough to verify the highest purity level of Ga as concerns Hg traces (i.e. 1 x 10/sup -5/ % Hg in Ga by weight). The above method was applied to some samples of gallium used in this laboratory. 15 references, 3 figures.

  20. Energy dependence of proton-induced displacement damage in gallium arsenide

    SciTech Connect

    Burke, E.A.; Dale, C.J.; Campbell, A.B.; Summers, G.P.; Palmer, T.; Zuleeg, R.; Stapor, W.J.; Xapsos, M.A.

    1987-12-01

    Nonionizing energy deposition in gallium arsenide has been calculated for protons with energies ranging from 1 to 1000 MeV. The calculations are compared with new experimental results for ion implanted gallium arsenide resistors and Hall samples irradiated with protons in the energy range 1 to 60 MeV. Results are also compared with recent studies of proton induced displacement damage in silicon.

  1. Concerning the energy levels of silver in Ge-Si alloys

    SciTech Connect

    Tahirov, V. I.; Agamaliev, Z. A.; Sadixova, S. R.; Guliev, A. F.; Gahramanov, N. F.

    2012-03-15

    The emission from impurity states of silver (an element of the IB subgroup) in a Ge-Si alloy, containing 18 at % Si, has been studied. The donor level of silver has been found in crystals doubly doped with gallium and silver, while its first acceptor level has been revealed in crystals doped with only silver. Single crystals were grown by pulling from a melt using a feeding rod. Doping with gallium was performed by introducing this element into the feeding rod, and silver was introduced into the crystals via diffusion. The positions of the donor and first acceptor Ag levels with respect to the top of the valence band were found by analyzing the temperature dependence of the Hall coefficient and the electroneutrality equation for the crystal: 0.06 and 0.29 eV, respectively.

  2. Interplay of disorder and geometrical frustration in Gadolinium Gallium Garnet

    NASA Astrophysics Data System (ADS)

    Woo, Nayoon; Silevitch, D. M.; Rosenbaum, T. F.

    2015-03-01

    We study the effects of disorder on the geometrically frustrated Heisenberg antiferromagnet Gadolinium Gallium Garnet (GGG) using neodymium doping (0.1 to 1%) in combination with linear and nonlinear ac magnetic susceptibility. The Nd doping actually alleviates the effects of disorder due to excess Gd ions occupying Ga sites. The linear, frequency-dependent susceptibility reveals that 1% Nd doping suppresses the appearance of any long-range order from approximately 80mK to below 30mK. The dynamics of isolated, correlated spin clusters were studied as a function of doping level using nonlinear susceptometry. In this regime, both the aggregate moment of the clustered spins and the activation field required to excite a nonlinear response were inversely correlated with the dopant density.

  3. Experimental study on SPDT machining of Gallium Phosphide

    NASA Astrophysics Data System (ADS)

    Vaclavk, J.; Dole?ek, R.; Ldl, V.; Psota, P.

    2013-09-01

    Gallium Phosphide (GaP) is widely used semiconductor material, but can be also used as a material for visible and infrared optical elements. Combination of its optical and mechanical properties such as high mechanical durability, transparency from visible to infrared wavelengths and high refractive index makes it very interesting material for design of high performance optical systems in NIR and MWIR. Manufacturing of optical elements for such wavelength ranges is shifting from traditional grinding and polishing techniques to a more versatile SPDT machining. It is therefore useful to employ SPDT in production of optical surfaces on GaP. As the GaP is similar to GaAs, but harder and more brittle, all all the problems already known for GaAs are present. Here we report results of experiments with SPDT machining of optical surfaces on GaP substrates and comparison with classical machining methods.

  4. Near-electrode processes in lanthanum-gallium tantalate crystals

    SciTech Connect

    Buzanov, O. A.; Zabelina, E. V. Kozlova, N. S. Sagalova, T. B.

    2008-09-15

    The near-electrode processes on the surfaces of the polar cuts of lanthanum-gallium tantalate crystals grown in different atmospheres were investigated. The temperature dependences of short-circuit currents in the temperature range 20-700{sup o}C were measured and phase analysis of the sample surfaces after the temperature tests were performed. It is shown that short-circuit currents arise on the surfaces of polar cuts with identical conducting coatings without preliminary polarization. These currents are caused by the generation of intrinsic emf as a result of the electrochemical reactions on opposite polar cut surfaces coming in contact with a conducting coating. It is established that the crystal growth atmosphere and the conducting coating material significantly affect the temperature dependences of short-circuit currents.

  5. Electron microscopy of gallium nitride growth on polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Webster, R. F.; Cherns, D.; Kuball, M.; Jiang, Q.; Allsopp, D.

    2015-11-01

    Transmission and scanning electron microscopy were used to examine the growth of gallium nitride (GaN) on polycrystalline diamond substrates grown by metalorganic vapour phase epitaxy with a low-temperature aluminium nitride (AlN) nucleation layer. Growth on unmasked substrates was in the (0001) orientation with threading dislocation densities ?7 109 cm-2. An epitaxial layer overgrowth technique was used to reduce the dislocation densities further, by depositing silicon nitride stripes on the surface and etching the unmasked regions down to the diamond substrate. A re-growth was then performed on the exposed side walls of the original GaN growth, reducing the threading dislocation density in the overgrown regions by two orders of magnitude. The resulting microstructures and the mechanisms of dislocation reduction are discussed.

  6. Raman scattering of magnetoelectric gallium ferrite thin films.

    PubMed

    Thomasson, Alexandre; Kreisel, Jens; Lefvre, Christophe; Roulland, Franois; Versini, Gilles; Barre, Sophie; Viart, Nathalie

    2013-01-30

    Gallium ferrite, Ga(2-x)Fe(x)O(3) (GFO), is a promising magnetoelectric material as it exhibits both magnetic and electric orders close to room temperature. Here, we report a temperature-dependent investigation of GFO thin films with x = 1.0 and 1.4 by using Raman scattering. Our investigation suggests the absence of a structural phase transition of both films in the investigated 90-500 K temperature range, which is similar to earlier observations on bulk samples. We note, however, the occurrence of weak anomalies in the temperature-dependent band position of some phonons, which we attribute to spin-phonon coupling as the anomalies occur close to the Nel temperature of the materials. PMID:23258119

  7. Growth and characterization of gallium nitride nanocrystals on carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Suresh Kumar, V.; Kumar, J.; Srivastava, Rajesh Kumar; Srivastava, Anchal; Srivastava, O. N.

    2008-04-01

    Gallium nitride (GaN) nanocrystals have been grown on the tip of aligned carbon nanotubes (CNTs) substrate by chemical vapour transport method. It was found that GaN nanocrystals were formed on the tip and outermost shells of CNT bundles in the form of nanorods. X-ray diffraction (XRD) pattern shows that the GaN nanocrystals are of wurtzite structure. Scanning electron microscopy (SEM) images show the nanocrystals ranging from 10 to 100 nm has been realized under different experimental conditions exhibiting different shapes. Heterojunctions between CNTs and GaN nanocrystals, depending on their unique property, can be utilized for nanosized optical and optoelectronic devices. UV-optical absorption spectrum show the band edge at 360 nm, which is related to the bandgap energy of GaN.

  8. Low-threshold indium gallium nitride quantum dot microcavity lasers

    NASA Astrophysics Data System (ADS)

    Woolf, Alexander J.

    Gallium nitride (GaN) microcavities with embedded optical emitters have long been sought after as visible light sources as well as platforms for cavity quantum electrodynamics (cavity QED) experiments. Specifically, materials containing indium gallium nitride (InGaN) quantum dots (QDs) offer an outstanding platform to study light matter interactions and realize practical devices, such as on-chip light emitting diodes and nanolasers. Inherent advantages of nitride-based microcavities include low surface recombination velocities, enhanced room-temperature performance (due to their high exciton binding energy, as high as 67 meV for InGaN QDs), and emission wavelengths in the blue region of the visible spectrum. In spite of these advantages, several challenges must be overcome in order to capitalize on the potential of this material system. Such diffculties include the processing of GaN into high-quality devices due to the chemical inertness of the material, low material quality as a result of strain-induced defects, reduced carrier recombination effciencies due to internal fields, and a lack of characterization of the InGaN QDs themselves due to the diffculty of their growth and therefore lack of development relative to other semiconductor QDs. In this thesis we seek to understand and address such issues by investigating the interaction of light coupled to InGaN QDs via a GaN microcavity resonator. Such coupling led us to the demonstration of the first InGaN QD microcavity laser, whose performance offers insights into the properties and current limitations of the nitride materials and their emitters. This work is organized into three main sections. Part I outlines the key advantages and challenges regarding indium gallium nitride (InGaN) emitters embedded within gallium nitride (GaN) optical microcavities. Previous work is also discussed which establishes context for the work presented here. Part II includes the fundamentals related to laser operation, including the derivation and analysis of the laser rate equations. A thorough examination of the rate equations serves as a natural motivation for QDs and high-quality factor low-modal volume resonators as an optimal laser gain medium and cavity, respectively. The combination of the two theoretically yields the most efficient semiconductor laser device possible. Part III describes in detail the design, growth, fabrication and characterization of the first InGaN QD microcavity laser. Additional experiments are also conducted in order to conclusively prove that the InGaN QDs serve as the gain medium and facilitate laser oscillation within the microdisk cavities. Part III continues with work related towards the development of the next generation of nitride light emitting devices. This includes the realization of photonic crystal cavity (PCC) fragmented quantum well (FQW) lasers that exhibit record low lasing thresholds of 9.1 muJ/cm2, comparable to the best devices in other III-V material systems. Part III also discusses cavity QED experiments on InGaN QDs embedded within GaN PCCs in order to quantify the degree of light-matter interaction. The lack of experimental evidence for weak or strong coupling, in the form of the Purcell Effect or cavity-mode anti-crossing respectively, naturally motivates the question of what mechanism is limiting the device performance. Part III concludes with cathodoluminesence and tapered fiber measurements in order to identify the limiting factor towards achieving strong coupling between InGaN QDs and GaN microcavities.

  9. A high open-circuit voltage gallium nitride betavoltaic microbattery

    NASA Astrophysics Data System (ADS)

    Cheng, Zaijun; Chen, Xuyuan; San, Haisheng; Feng, Zhihong; Liu, Bo

    2012-07-01

    A high open-circuit voltage betavoltaic microbattery based on a gallium nitride (GaN) p-i-n homojunction is demonstrated. As a beta-absorbing layer, the low electron concentration of the n-type GaN layer is achieved by the process of Fe compensation doping. Under the irradiation of a planar solid 63Ni source with activity of 0.5 mCi, the open-circuit voltage of the fabricated microbattery with 2 2 mm2 area reaches as much as 1.64 V, which is the record value reported for betavoltaic batteries with 63Ni source, the short-circuit current was measured as 568 pA and the conversion effective of 0.98% was obtained. The experimental results suggest that GaN is a high-potential candidate for developing the betavoltaic microbattery.

  10. Charge accumulation at a threading edge dislocation in gallium nitride

    SciTech Connect

    Leung, K.; Wright, A.F.; Stechel, E.B.

    1999-04-01

    We have performed Monte Carlo calculations to determine the charge accumulation on threading edge dislocations in GaN as a function of the dislocation density and background dopant density. Four possible core structures have been examined, each of which produces defect levels in the gap and may therefore act as electron or hole traps. Our results indicate that charge accumulation, and the resulting electrostatic interactions, can change the relative stabilities of the different core structures. Structures having Ga and N vacancies at the dislocation core are predicted to be stable under nitrogen-rich and gallium-rich growth conditions, respectively. Due to dopant depletion at high dislocation density and the multitude of charge states, the line charge exhibits complex crossover behavior as the dopant and dislocation densities vary. {copyright} {ital 1999 American Institute of Physics.}

  11. Solar cells with gallium phosphide/silicon heterojunction

    NASA Astrophysics Data System (ADS)

    Darnon, Maxime; Varache, Renaud; Descazeaux, Mdric; Quinci, Thomas; Martin, Mickal; Baron, Thierry; Muoz, Delfina

    2015-09-01

    One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on 55 cm2 polished samples.

  12. Fabrication and properties of gallium phosphide variable colour displays

    NASA Technical Reports Server (NTRS)

    Effer, D.; Macdonald, R. A.; Macgregor, G. M.; Webb, W. A.; Kennedy, D. I.

    1973-01-01

    The unique properties of single-junction gallium phosphide devices incorporating both red and green radiative recombination centers were investigated in application to the fabrication of monolithic 5 x 7 displays capable of displaying symbolic and alphanumeric information in a multicolor format. A number of potentially suitable material preparation techniques were evaluated in terms of both material properties and device performance. Optimum results were obtained for double liquid-phase-epitaxial process in which an open-tube dipping technique was used for n-layer growth and a sealed tipping procedure for subsequent p-layer growth. It was demonstrated that to prepare devices exhibiting a satisfactory range of dominant wavelengths which can be perceived as distinct emission colors extending from the red through green region of the visible spectrum involves a compromise between the material properties necessary for efficient red emission and those considered optimum for efficient green emission.

  13. Ion-beam-irradiation induced defects in gallium nitride

    NASA Astrophysics Data System (ADS)

    Jiang, W.; Weber, W. J.; Wang, C. M.

    2003-05-01

    Epitaxial single-crystal gallium nitride (GaN) films on sapphire were irradiated at low and room temperatures using O + ions over a range of fluences. The accumulation of disorder on the Ga sublattice has been investigated based on He + Rutherford backscattering analysis along the <0 0 0 1> -axial channeling direction. The degree of disorder in the O + irradiated GaN increases at low doses and saturates above 10 displacements per atom (dpa). The microstructures of two O +-irradiated specimens are characterized using high-resolution transmission electron microscopy. Similar planar defect structures at the saturated disorder level are observed for as-irradiated and thermally annealed GaN. The growth and annihilation of these defects during ion irradiation and thermal annealing are believed to contribute to the saturation and stability of defect concentrations.

  14. Thermal lensing in silver gallium selenide parametric oscillator crystals.

    PubMed

    Marquardt, C L; Cooper, D G; Budni, P A; Knights, M G; Schepler, K L; Dedomenico, R; Catella, G C

    1994-05-20

    We performed an experimental investigation of thermal lensing in silver gallium selenide (AgGaSe(2)) optical parametric oscillator crystals pumped by a 2-m laser at ambient temperature. We determined an empirical expression for the effective thermal focusing power in terms of the pump power, beam diameter, crystal length, and absorption coefficient. This relation may be used to estimate average power limitations in designing AgGaSe(2) optical parametric oscillators. We also demonstrated an 18% slope efficiency from a 2-m pumped AgGaSe(2) optical parametric oscillator operated at 77 K, at which temperature thermal lensing is substantially reduced because of an increase in the thermal conductivity and a decrease in the thermal index gradient dn/dT. Cryogenic cooling may provide an additional option for scaling up the average power capability of a 2-m pumped AgGaSe(2) optical parametric oscillator. PMID:20885687

  15. Ion-Beam-Irradiation Induced Defects in Gallium Nitride

    SciTech Connect

    Jiang, Weilin; Weber, William J.; Wang, Chong M.

    2003-05-16

    Epitaxial single-crystal gallium nitride (GaN) films on sapphire were irradiated at low and room temperatures using O ions over a range of fluences. The accumulation of disorder on the Ga sublattice has been investigated based on He Rutherford backscattering analysis along the <0001>-axial channeling direction. The degree of disorder in the O irradiated GaN increases at low doses and saturates above 10 displacements per atom (dpa). The microstructures of two O-irradiated specimens are characterized using high-resolution transmission electron microscopy. Similar planar defect structures at the saturated disorder level are observed for as-irradiated and thermally annealed GaN. The growth and annihilation of these defects during ion irradiation and thermal annealing are believed to contribute to the saturation and stability of defect concentrations.

  16. Dynamical and transport properties of liquid gallium at high pressures.

    PubMed

    Sheppard, D; Mazevet, S; Cherne, F J; Albers, R C; Kadau, K; Germann, T C; Kress, J D; Collins, L A

    2015-06-01

    Quantum molecular dynamics (QMD) simulations are used to calculate the equation of state, structure, and transport properties of liquid gallium along the principal shock Hugoniot. The calculated Hugoniot is in very good agreement with experimental data up to a pressure of 150 GPa as well as with our earlier classical molecular dynamics calculations using a modified embedded atom method (MEAM) potential. The self-diffusion and viscosity calculated using QMD agree with experimental measurements better than the MEAM results, which we attribute to capturing the complexity of the electronic structure at elevated temperatures. Calculations of the DC conductivity were performed around the Hugoniot. Above a density of 7.5 g/cm(3), the temperature increases rapidly along the Hugoniot, and the optical conductivity decreases, indicating simple liquid metal behavior. PMID:26172802

  17. Dynamical and transport properties of liquid gallium at high pressures

    NASA Astrophysics Data System (ADS)

    Sheppard, D.; Mazevet, S.; Cherne, F. J.; Albers, R. C.; Kadau, K.; Germann, T. C.; Kress, J. D.; Collins, L. A.

    2015-06-01

    Quantum molecular dynamics (QMD) simulations are used to calculate the equation of state, structure, and transport properties of liquid gallium along the principal shock Hugoniot. The calculated Hugoniot is in very good agreement with experimental data up to a pressure of 150 GPa as well as with our earlier classical molecular dynamics calculations using a modified embedded atom method (MEAM) potential. The self-diffusion and viscosity calculated using QMD agree with experimental measurements better than the MEAM results, which we attribute to capturing the complexity of the electronic structure at elevated temperatures. Calculations of the DC conductivity were performed around the Hugoniot. Above a density of 7.5 g/cm3, the temperature increases rapidly along the Hugoniot, and the optical conductivity decreases, indicating simple liquid metal behavior.

  18. Recognition of distinctive patterns of gallium-67 distribution in sarcoidosis

    SciTech Connect

    Sulavik, S.B.; Spencer, R.P.; Weed, D.A.; Shapiro, H.R.; Shiue, S.T.; Castriotta, R.J. )

    1990-12-01

    Assessment of gallium-67 ({sup 67}Ga) uptake in the salivary and lacrimal glands and intrathoracic lymph nodes was made in 605 consecutive patients including 65 with sarcoidosis. A distinctive intrathoracic lymph node {sup 67}Ga uptake pattern, resembling the Greek letter lambda, was observed only in sarcoidosis (72%). Symmetrical lacrimal gland and parotid gland {sup 67}Ga uptake (panda appearance) was noted in 79% of sarcoidosis patients. A simultaneous lambda and panda pattern (62%) or a panda appearance with radiographic bilateral, symmetrical, hilar lymphadenopathy (6%) was present only in sarcoidosis patients. The presence of either of these patterns was particularly prevalent in roentgen Stages I (80%) or II (74%). We conclude that simultaneous (a) lambda and panda images, or (b) a panda image with bilateral symmetrical hilar lymphadenopathy on chest X-ray represent distinctive patterns which are highly specific for sarcoidosis, and may obviate the need for invasive diagnostic procedures.

  19. Elasto-optic effect anisotropy in gallium phosphide crystals.

    PubMed

    Mytsyk, B G; Demyanyshyn, N M; Sakharuk, O M

    2015-10-01

    Elasto-optic coefficients of gallium phosphide (GaP) crystals were calculated on the basis of their piezo-optic and elastic coefficients. Surfaces of the spatial distribution of piezo- and elasto-optic effects in these crystals were built. The maxima of the surfaces of the elasto-optic effect and the geometries of acousto-optic interaction that correspond to these maxima were found. Ratios that describe the rotation of optical indicatrix, depending on direction of the action of uniaxial pressure or deformation on cubic crystal, were recorded. It was shown that such rotations induced by mechanical stress do not exceed 1.5 in GaP, but in some cubic crystals they can reach tens of degrees. PMID:26479633

  20. Compilation of gallium resource data for bauxite deposits

    USGS Publications Warehouse

    Schulte, Ruth F.; Foley, Nora K.

    2014-01-01

    Gallium (Ga) concentrations for bauxite deposits worldwide have been compiled from the literature to provide a basis for research regarding the occurrence and distribution of Ga worldwide, as well as between types of bauxite deposits. In addition, this report is an attempt to bring together reported Ga concentration data into one database to supplement ongoing U.S. Geological Survey studies of critical mineral resources. The compilation of Ga data consists of location, deposit size, bauxite type and host rock, development status, major oxide data, trace element (Ga) data and analytical method(s) used to derive the data, and tonnage values for deposits within bauxite provinces and districts worldwide. The range in Ga concentrations for bauxite deposits worldwide is

  1. A model for pore growth in anodically etched gallium phosphide

    NASA Astrophysics Data System (ADS)

    Ricci, P. C.; Salis, M.; Anedda, A.

    2005-06-01

    The electrochemical etching process of porous gallium phosphide was studied by means of the characteristic current-potential (I-V) curves. Measurements were performed in H2SO4 0.5-M aqueous solution both in the dark and by illuminating the samples with the 351-nm line of an argon laser. Raman spectroscopy was applied to investigate the surface morphology of the samples prepared under different anodizing conditions within the potentiostatic regime. Based on a few reasonable assumptions, a simple model of pore growth is proposed. The enhancing effect in current intensity due to the branching of pores and the opposite effect due to a concomitant decrease in the effective cross area available for carrier transport are accounted for to explain the main features of the recorded I -V curves.

  2. Results from the Soviet-American gallium experiment

    SciTech Connect

    Abazov, A.I.; Anosov, O.L.; Faizov, E.L.; Gavrin, V.N.; Kalikhov, A.V.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mezentseva, S.A.; Mirmov, I.N.; Ostrinsky, A.V.; Pshukov, A.M.; Revzin, N.E.; Shikhin, A.A.; Timofeyev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Zatsepin, G.T.; Bowles, T.J.; Cleveland, B.T.; Elliott, S.R.; O`Brien, H.A.; Wark, D.L.; Wilkerson, J.F.; Davis, R. Jr.; Lande, K.; Cherry, M.L.; Kouzes, R.T.

    1991-12-31

    A radiochemical {sup 71}Ga-{sup 71}Ge experiment to determine the primary flux of neutrinos from the Sun has begun operation at the Baksan Neutrino Observatory. The number of {sup 71}Ge atoms extracted from thirty tons of gallium was measured in five runs during the period of January to July 1990. Assuming that the extraction efficiency for {sup 71}Ge atoms produced by solar neutrinos is the same as from natural Ge carrier, we observed the capture rate to be 20 + 15/{minus}20 (stat) {plus_minus} 32 (syst) SNU, resulting in a limit of less than 79 SNU (90% CL). This is to be compared with 132 SNU predicted by the Standard Solar Model.

  3. Results from the Soviet-American gallium experiment

    SciTech Connect

    Abazov, A.I.; Anosov, O.L.; Faizov, E.L.; Gavrin, V.N.; Kalikhov, A.V.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mezentseva, S.A.; Mirmov, I.N.; Ostrinsky, A.V.; Pshukov, A.M.; Revzin, N.E.; Shikhin, A.A.; Timofeyev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Zatsepin, G.T. . Inst. Yadernykh Issledovanij); Bowles, T.J.; Cleveland, B.T.; Elliott, S.R.; O'Brien, H.A.; Wark, D.L.; Wilkerson, J.F.

    1991-01-01

    A radiochemical {sup 71}Ga-{sup 71}Ge experiment to determine the primary flux of neutrinos from the Sun has begun operation at the Baksan Neutrino Observatory. The number of {sup 71}Ge atoms extracted from thirty tons of gallium was measured in five runs during the period of January to July 1990. Assuming that the extraction efficiency for {sup 71}Ge atoms produced by solar neutrinos is the same as from natural Ge carrier, we observed the capture rate to be 20 + 15/{minus}20 (stat) {plus minus} 32 (syst) SNU, resulting in a limit of less than 79 SNU (90% CL). This is to be compared with 132 SNU predicted by the Standard Solar Model.

  4. Coated gallium arsenide neutron detectors : results of characterizationmeasurements.

    SciTech Connect

    Klann, R. T.; Perret, G.; Sanders, J.

    2006-09-29

    Effective detection of special nuclear materials (SNM) is essential for reducing the threat associated with stolen or improvised nuclear devices. Passive radiation detection technologies are primarily based on gamma-ray detection and subsequent isotope identification or neutron detection (specific to neutron sources and SNM). One major effort supported by the Department of Homeland Security in the area of advanced passive detection is handheld or portable neutron detectors for search and localization tasks in emergency response and interdiction settings. A successful SNM search detector will not only be able to confirm the presence of fissionable materials but also establish the location of the source in as short of time as possible while trying to minimize false alarms due to varying background or naturally occurring radioactive materials (NORM). For instruments based on neutron detectors, this translates to detecting neutrons from spontaneous fission or alpha-n reactions and being able to determine the direction of the source (or localizing the source through subsequent measurements). Polyethylene-coated gallium arsenide detectors were studied because the detection scheme is based on measuring the signal in the gallium arsenide wafers from the electrical charge of the recoil protons produced from the scattering of neutrons from the hydrogen nucleus. The inherent reaction has a directional dependence because the neutron and hydrogen nucleus have equivalent masses. The assessment and measurement of polyethylene-coated gallium arsenide detector properties and characteristics was the first phase of a project being performed for the Department of Homeland Security and the results of these tests are reported in this report. The ultimate goal of the project was to develop a man-portable neutron detection system that has the ability to determine the direction of the source from the detector. The efficiency of GaAs detectors for different sizes of polyethylene layers and different angles between the detector and the neutron source were determined. Preliminary measurements with a neutron generator based on a deuterium-tritium reaction ({approx}14 MeV neutrons) were performed and the results are discussed. This report presents the results of these measurements in terms of efficiency and angular efficiency and compares them to Monte Carlo calculations to validate the calculation scheme in view of further applications. Based on the results of this study, the polyethylene-coated gallium arsenide detectors provide adequate angular resolution based on proton recoil detection from the neutron scattering reaction from hydrogen. However, the intrinsic efficiency for an individual detector is extremely low. Because of this low efficiency, large surface area detectors ( or a large total surface area from many small detectors) would be required to generate adequate statistics to perform directional detection in near-real time. Large surface areas could be created by stacking the detector wafers with only a negligible attenuation of source neutrons. However, the cost of creating such a large array of GaAs is cost-prohibitive at this time.

  5. Single event upsets in gallium arsenide dynamic logic

    SciTech Connect

    Fouts, D.J. . ECE Dept.); Weatherford, T. ); McMorrow, C.; Melinger, J.S.; Campbell, A.B. )

    1994-12-01

    The advantages and disadvantages of using gallium arsenide (GaAs) dynamic logic in computers and digital systems are briefly discussed, especially with respect to space applications. A short introduction to the topology and operation of GaAs Two-Phase Dynamic FET Logic (TDFL) circuits is presented. Experiments for testing the SEU sensitivity of GaAs TDFL, using a laser to create charge collection events, are described. Results are used to estimate the heavy-ion, soft error rate for TDFL in a spacecraft in geosynchronous orbit, and the dependence of the SEU sensitivity on clock frequency, clock voltage, and clock phase. Analysis of the data includes a comparison between the SEU sensitivities of TDFL and the more common static form of GaAs logic, Directly Coupled FET Logic (DCFL). This is the first reported SEU testing of GaAs dynamic logic.

  6. Design and Performance Estimates of an Ablative Gallium Electromagnetic Thruster

    NASA Technical Reports Server (NTRS)

    Thomas, Robert E.

    2012-01-01

    The present study details the high-power condensable propellant research being conducted at NASA Glenn Research Center. The gallium electromagnetic thruster is an ablative coaxial accelerator designed to operate at arc discharge currents in the range of 10-25 kA. The thruster is driven by a four-parallel line pulse forming network capable of producing a 250 microsec pulse with a 60 kA amplitude. A torsional-type thrust stand is used to measure the impulse of a coaxial GEM thruster. Tests are conducted in a vacuum chamber 1.5 m in diameter and 4.5 m long with a background pressure of 2 microtorr. Electromagnetic scaling calculations predict a thruster efficiency of 50% at a specific impulse of 2800 seconds.

  7. Temperature dependence of carrier capture by defects in gallium arsenide

    SciTech Connect

    Wampler, William R.; Modine, Normand A.

    2015-08-01

    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  8. Preparation of gallium oxynitride powder and its nanofibers by the nitridation of a gallium oxide precursor doped with nickel or cobalt obtained via the citrate route.

    PubMed

    Miyaake, A; Masubuchi, Y; Takeda, T; Motohashi, T; Kikkawa, S

    2010-07-14

    Acicular crystals were grown in gallium oxynitride powder prepared by ammonia nitridation of amorphous gallium oxide precursors containing less than 5 at% of either Ni or Co, via the citrate route. The crystals were several tens of nanometres wide, several micrometres long, and grown in the temperature range 750 to 850 degrees C in a flow of ammonia of less than 200 mL min(-1). The crystal structure of the gallium oxynitride was a highly disordered 2H wurtzite-type with some 3C zinc blende-type stacking faults. The crystals grew in their basal plane changing their aspect ratio with the supplying method of small amounts of Ni or Co and an amount of residual carbon. The acicular crystals were grown by the catalytic behavior of Ni or Co to enhance one-dimensional growth in the hexagonal c-plane. PMID:20571651

  9. Sequential technetium-99m HMDP-gallium-67 citrate imaging for the evaluation of infection in the painful prosthesis

    SciTech Connect

    Merkel, K.D.; Brown, M.L.; Fitzgerald, R.H. Jr.

    1986-09-01

    In order to evaluate the clinical utility of sequential technetium-99m HMDP-gallium-67 scanning in patients with painful orthopedic prosthesis, a retrospective review was made of 154 sequential scans performed in 130 patients. Criteria for a positive study included spatially incongruent gallium-technetium uptake or gallium uptake that was congruent but more intense than technetium. Images were interpreted as negative if gallium was congruent and less intense than technetium. Sixty-six patients underwent surgery (31 infected, 35 aseptic), and 64 were evaluated clinically (3 infected, 61 aseptic). The combined results of the surgical and nonsurgical patients yielded a sensitivity of 66%, a specificity of 81%, and an accuracy of 77%. In this series, the technetium-gallium scan combination has proven to be helpful but more recent techniques such as indium-111-labeled leukocytes may prove to be superior to sequential technetium-gallium imaging.

  10. Novel ethylenediamine-gallium phosphate containing 6-fold coordinated gallium atoms with unusual four equatorial GaN bonds

    SciTech Connect

    Torre-Fernndez, Laura; Espina, Arnzazu; Khainakov, Sergei A.; Amghouz, Zakariae; Garca, Jos R.; Garca-Granda, Santiago

    2014-07-01

    A novel ethylenediamine-gallium phosphate, formulated as Ga(H{sub 2}NCH{sub 2}CH{sub 2}NH{sub 2}){sub 2}PO{sub 4}2H{sub 2}O, was synthesized under hydrothermal conditions. The crystal structure, including hydrogen positions, was determined using single-crystal X-ray diffraction data (monoclinic, a=9.4886(3) , b=6.0374(2) , c=10.2874(3) , and ?=104.226(3), space group Pc) and the bulk was characterized by chemical (GaPCHN) and thermal analysis (TGMS and DSC), including activation energy data of its thermo-oxidative degradation, powder X-ray diffraction (PXRD), solid-state nuclear magnetic resonance (SS-NMR) measurements, and transmission electron microscopy (TEM, SAED/NBD, and STEM BF-EDX). The crystal structure is built up of infinite zig-zag chains running along the c-axis, formed by vertex-shared (PO{sub 4}) and (GaO{sub 2}N{sub 4}) polyhedra. The new compound is characterized by unusual four equatorial GaN bonds coming from two nonequivalent ethylenediamine molecules and exhibits strong blue emission at 430 nm (?{sub ex}=350 nm) in the solid state at room temperature. - Graphical abstract: Single crystals of a new ethylenediamine-gallium phosphate, Ga(H{sub 2}NCH{sub 2}CH{sub 2}NH{sub 2}){sub 2}PO{sub 4}2H{sub 2}O, were obtained and the structural features presented. This structure is one of the scarce examples of GaPO with GaN bonds reported. - Highlights: A novel ethylenediamine-gallium phosphate was hydrothermally synthesized. The new compound is characterized by unusual four equatorial GaN bonds. Void-volume analysis shows cages and channels with sizes ideally suited to accommodate small molecules. The new compound exhibits strong blue emission.

  11. Solar neutrino measurement with radiochemical gallium detector (GALLEX)

    NASA Astrophysics Data System (ADS)

    von Ammon, Reinhard

    1994-04-01

    The GALLEX experiment for the detection of solar neutrinos by means of a radiochemical gallium detector is operated by groups from Italy, France, Germany, Israel and the USA in the Gran Sasso underground laboratory (LNGS) near L'Aquila (Italy). It consists of (1) the technical scale tank made of glass fiber reinforced polyester fabric containing 101 metric tons (54 cu m) of a highly concentrated (8 moles per liter) GaCl3 solution; (2) a gas sparging system for desorption of GeCl4 which has been formed by interaction of the neutrinos with gallium according to Ga-71 + nue yields Ge-71 + e(-) and by addition of ca. 1 mg of a stable Ge isotope; (3) the absorption columns for concentration of GeCl4 into a volume of 1 l of water; (4) the laboratory scale apparatus for conversion of GeCl4 to GeH4 and mixing with the counting gas Xe; (5) the counter filling station, and (6) the low level proportional counters. Contributions of possible side reactions which have to be corrected for, e.g. by cosmic muons, fast neutrons and alpha-emitters are discussed, as well as the purification of the target solution from long-lived ( t1/2 = 271 d) cosmogenic Ge-68. A first preliminary result after one year of solar neutrino measurement is presented. This constitutes the first direct measurement of the basic proton-proton fusion reaction in the core of the sun. This result, appreciably below the predictions of the standard solar model (SSM) (132 Solar Neutrino Units (SNU)) can be interpreted, together with the results of the chlori ne and KAMIOKANDE experiments either by astrophysics or by neutrino oscillations (Mikheyev-Smirnov-Wolfenstein (MSW) effect). The solar neutrino measurements are continuing and a calibration experiment with a Cr-51 source is in preparation.

  12. Study of Magnetohydrodynamic Surface Waves on Liquid Gallium

    SciTech Connect

    Hantao Ji; William Fox; David Pace; H.L. Rappaport

    2004-05-13

    Magnetohydrodynamic (MHD) surface waves on liquid gallium are studied theoretically and experimentally in the small magnetic Reynolds number limit. A linear dispersion relation is derived when a horizontal magnetic field and a horizontal electric current is imposed. No wave damping is found in the shallow liquid limit while waves always damp in the deep liquid limit with a magnetic field parallel to the propagation direction. When the magnetic field is weak, waves are weakly damped and the real part of the dispersion is unaffected, while in the opposite limit waves are strongly damped with shortened wavelengths. In a table-top experiment, planar MHD surface waves on liquid gallium are studied in detail in the regime of weak magnetic field and deep liquid. A non-invasive diagnostic accurately measures surface waves at multiple locations by reflecting an array of lasers off the surface onto a screen, which is recorded by an Intensified-CCD camera. The measured dispersion relation is consistent with the linear theory with a reduced surface tension likely due to surface oxidation. In excellent agreement with linear theory, it is observed that surface waves are damped only when a horizontal magnetic field is imposed parallel to the propagation direction. No damping is observed under a perpendicular magnetic field. The existence of strong wave damping even without magnetic field suggests the importance of the surface oxide layer. Implications to the liquid metal wall concept in fusion reactors, especially on the wave damping and a Rayleigh-Taylor instability when the Lorentz force is used to support liquid metal layer against gravity, are discussed.

  13. The use of gallium-67 scintigraphy in the diagnosis of acute interstitial nephritis

    PubMed Central

    Graham, François; Lord, Martin; Froment, Daniel; Cardinal, Héloise; Bollée, Guillaume

    2016-01-01

    Background Gallium-67 scintigraphy has been suggested as a noninvasive method to diagnose acute interstitial nephritis (AIN). However, its diagnostic performance and usefulness remain controversial. Methods We retrospectively reviewed the charts of 76 patients who underwent gallium-67 scintigraphy for a suspicion of AIN. Patients were classified based on kidney biopsy and/or clinical probability of AIN. Gallium-67 scintigraphy results were reinterpreted blindly using both posterior planar and single photon emission computed tomography (SPECT) imaging. Intensity of radioisotope uptake in the kidney was graded from 0 to 5. Results The diagnosis of AIN was confirmed in 23 patients and excluded in 44. Nine patients with an uncertain diagnosis were excluded from subsequent analysis. A gallium-67 kidney uptake cutoff of 1 gave a negative predictive value of 100%, whereas a cutoff of 5 had an excellent specificity and positive predictive value for the diagnosis of AIN. When using a cutoff of 3, which had previously been used in the literature, we obtained a sensitivity of 61% and a specificity of 75% with posterior planar imaging. The results of both SPECT and posterior planar imaging modalities were comparable. Conclusions Gallium-67 scintigraphy may be of interest in patients with a clinical suspicion of AIN, especially in those who are unable to undergo kidney biopsy. However, results need to be interpreted with caution and depend on the intensity of gallium-67 kidney uptake. PMID:26798465

  14. Study of liquid gallium at high pressure using synchrotron x-ray

    SciTech Connect

    Yu, Tony; Guo Quanzhong; Parise, John; Chen Jiuhua; Ehm, Lars; Huang Shu; Luo Shengnian

    2012-06-01

    Liquid gallium has been studied at high pressure up to 2 GPa and ambient temperature in a diamond anvil cell using high energy synchrotron x-ray beam. The total x-ray scattering data of liquid gallium were collected up to Q = 12 A{sup -1} and analyzed using pair distribution functions (PDF). The results indicate that the first nearest neighbor peak and second nearest neighbor (shoulder) peak of PDF in liquid gallium does not change with pressure, whereas the higher order (i.e., third and fourth) nearest neighbor peaks shift towards shorter distance with increasing pressure. Reverse Monte Carlo modeling based on the observed data shows that the coordination number in the liquid gallium increases with pressure from 10.5 at 0.3 GPa to 11.6 at 2 GPa. An atomic arrangement similar to the crystalline phase of Ga(II) with coordination number of 12 is proposed for the locally dense-packed rigid unit in liquid gallium. The volume compression data derived from the structure modeling yield a bulk modulus of 12.1(6) GPa for liquid gallium.

  15. High-Temperature Decomposition of Brnsted Acid Sites in Gallium-Substituted Zeolites

    SciTech Connect

    K Al-majnouni; N Hould; W Lonergan; D Vlachos; R Lobo

    2011-12-31

    The dehydroxylation of Broensted acid sites (BAS) in Ga-substituted zeolites was investigated at temperatures up to 850 C using X-ray absorption spectroscopy (XAS), Fourier transform infrared spectroscopy (FTIR), and mass spectrometry-temperature programmed desorption (MS-TPD). X-ray absorption near-edge spectroscopy (XANES) revealed that the majority of gallium has tetrahedral coordination even after complete dehydroxylation. The interatomic gallium-oxygen distance and gallium coordination number determined by extended X-ray absorption fine structure (EXAFS) are consistent with gallium in tetrahedral coordination at low T (< 550 C). Upon heating Ga-Beta and Ga-ZSM5 to 850 C, analysis of the EXAFS showed that 70 and 80% of the gallium was still in tetrahedral coordination. The remainder of the gallium was found to be in octahedral coordination. No trigonal Ga atoms were observed. FTIR measurements carried out at similar temperatures show that the intensity of the OH vibration due to BAS has been eliminated. MS-TPD revealed that hydrogen in addition to water evolved from the samples during dehydroxylation. This shows that dehydrogenation in addition to dehydration is a mechanism that contributes to BAS decomposition. Dehydrogenation was further confirmed by exposing the sample to hydrogen to regenerate some of the BAS as monitored by FTIR and MS-TPD.

  16. Mechanisms of uptake of gallium by human neuroblastoma cells and effects of gallium and aluminum on cell growth, lysosomal protease, and choline acetyl transferase activity.

    PubMed

    Dobson, C B; Graham, J; Itzhaki, R F

    1998-10-01

    We have studied the uptake and removal of gallium, used as an analogue of aluminum, and the effects of aluminum itself on cultured human neuroblastoma cells treated with soluble metal complexes. The prohibitively high cost of measurement of the only available radioisotope of aluminum (26Al) precluded its usage, and so we considered that gallium, which is chemically extremely similar, would be the most suitable model. Gallium has been used thus in a number of previous biological studies and has been found to behave like aluminum in many respects. We have previously shown that Al-EDTA treatment results in uptake of aluminum and expression of hyperphosphorylated tau, a key component of Alzheimer's disease paired helical filaments. Here we demonstrate that gallium uptake can occur by two separate methods, both leading to physiologically relevant intracellular metal concentrations. Uptake from medium containing bovine transferrin occurred mainly by pinocytosis, but in the presence of human transferrin (hTf), uptake by transferrin-mediated endocytosis occurred also, despite a very low level of hTf saturation, indicating that Tf-mediated uptake is a very effective method of Ga internalization. The intracellular gallium is relatively stable, though partially removable by (1 mM) EDTA, desferrioxamine, or 1,2-dimethyl-3-hydroxypyrid-4-one. Aluminum and gallium treatment were found to increase the overall activity of lysosomal proteases, enzymes implicated in amyloid precursor protein cleavage. No effects were detected on choline acetyl transferase activity, cell growth, or tritiated thymidine incorporation or on the structure of the cells, as judged by light or electron microscopy. PMID:9784293

  17. Distribution of trace levels of therapeutic gallium in bone as mapped by synchrotron x-ray microscopy.

    PubMed Central

    Bockman, R S; Repo, M A; Warrell, R P; Pounds, J G; Schidlovsky, G; Gordon, B M; Jones, K W

    1990-01-01

    Gallium nitrate, a drug that inhibits calcium release from bone, has been proven a safe and effective treatment for the accelerated bone resorption associated with cancer. Though bone is a target organ for gallium, the kinetics, sites, and effects of gallium accumulation in bone are not known. We have used synchrotron x-ray microscopy to map the distribution of trace levels of gallium in bone. After short-term in vivo administration of gallium nitrate to rats, trace (nanogram) amounts of gallium preferentially localized to the metabolically active regions in the metaphysis as well as the endosteal and periosteal surfaces of diaphyseal bone, regions where new bone formation and modeling were occurring. The amounts measured were well below the levels known to be cytotoxic. Iron and zinc, trace elements normally found in bone, were decreased in amount after in vivo administration of gallium. These studies represent a first step toward understanding the mechanism(s) of action of gallium in bone by suggesting the possible cellular, structural, and elemental "targets" of gallium. Images PMID:2349224

  18. Alloy softening in binary molybdenum alloys

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Witzke, W. R.

    1972-01-01

    An investigation was conducted to determine the effects of alloy additions of Hf, Ta, W, Re, Os, Ir, and Pt on the hardness of Mo. Special emphasis was placed on alloy softening in these binary Mo alloys. Results showed that alloy softening was produced by those elements having an excess of s+d electrons compared to Mo, while those elements having an equal number or fewer s+d electrons than Mo failed to produce alloy softening. Alloy softening and hardening can be correlated with the difference in number of s+d electrons of the solute element and Mo.

  19. Growth and analysis of gallium arsenide-gallium antimonide single and two-phase nanoparticles

    NASA Astrophysics Data System (ADS)

    Schamp, Crispin T.

    When evaluating the path of phase transformations in systems with nanoscopic dimensions one often relies on bulk phase diagrams for guidance because of the lack of phase diagrams that show the effect of particle size. The GaAs-GaSb pseudo-binary alloy is chosen for study to gain insight into the size dependence of solid-solubility in a two-phase system. To this end, a study is performed using independent laser ablation of high purity targets of GaAs and GaSb. The resultant samples are analyzed by transmission electron microscopy. Experimental results indicate that GaAs-GaSb nanoparticles have been formed with compositions that lie within the miscibility gap of bulk GaAs-GaSb. An unusual nanoparticle morpohology resembling the appearance of ice cream cones has been observed in single component experiments. These particles are composed of a spherical cap of Ga in contact with a crystalline cone of either GaAs or GaSb. The cones take the projected 2-D shape of a triangle or a faceted gem. The liquid Ga is found to consistently be of spherical shape and wets to the widest corners of the cone, suggesting an energy minimum exists at that wetting condition. To explore this observation a liquid sphere is modeled as being penetrated by a solid gem. The surface energies of the solid and liquid, and interfacial energy are summed as a function of penetration depth, with the sum showing a cusped minimum at the penetration depth corresponding to the waist of the gem. The angle of contact of the liquid wetting the cone is also calculated, and Young's contact angle is found to occur when the derivative of the total energy with respect to penetration depth is zero, which can be a maximum or a minimum depending on the geometrical details. The spill-over of the meniscus across the gem corners is found to be energetically favorable when the contact angle achieves the value of the equilibrium angle; otherwise the meniscus is pinned at the corners.

  20. Saddle-like deformation in a dielectric elastomer actuator embedded with liquid-phase gallium-indium electrodes

    SciTech Connect

    Wissman, J.; Finkenauer, L.; Deseri, L.; Majidi, C.

    2014-10-14

    We introduce a dielectric elastomer actuator (DEA) composed of liquid-phase Gallium-Indium (GaIn) alloy electrodes embedded between layers of poly(dimethylsiloxane) (PDMS) and examine its mechanics using a specialized elastic shell theory. Residual stresses in the dielectric and sealing layers of PDMS cause the DEA to deform into a saddle-like geometry (Gaussian curvature K<0). Applying voltage Φ to the liquid metal electrodes induces electrostatic pressure (Maxwell stress) on the dielectric and relieves some of the residual stress. This reduces the longitudinal bending curvature and corresponding angle of deflection ϑ. Treating the elastomer as an incompressible, isotropic, NeoHookean solid, we develop a theory based on the principle of minimum potential energy to predict the principal curvatures as a function of Φ. Based on this theory, we predict a dependency of ϑ on Φ that is in strong agreement with experimental measurements performed on a GaIn-PDMS composite. By accurately modeling electromechanical coupling in a soft-matter DEA, this theory can inform improvements in design and fabrication.

  1. Saddle-like deformation in a dielectric elastomer actuator embedded with liquid-phase gallium-indium electrodes

    NASA Astrophysics Data System (ADS)

    Wissman, J.; Finkenauer, L.; Deseri, L.; Majidi, C.

    2014-10-01

    We introduce a dielectric elastomer actuator (DEA) composed of liquid-phase Gallium-Indium (GaIn) alloy electrodes embedded between layers of poly(dimethylsiloxane) (PDMS) and examine its mechanics using a specialized elastic shell theory. Residual stresses in the dielectric and sealing layers of PDMS cause the DEA to deform into a saddle-like geometry (Gaussian curvature K <0). Applying voltage ? to the liquid metal electrodes induces electrostatic pressure (Maxwell stress) on the dielectric and relieves some of the residual stress. This reduces the longitudinal bending curvature and corresponding angle of deflection ?. Treating the elastomer as an incompressible, isotropic, NeoHookean solid, we develop a theory based on the principle of minimum potential energy to predict the principal curvatures as a function of ?. Based on this theory, we predict a dependency of ? on ? that is in strong agreement with experimental measurements performed on a GaIn-PDMS composite. By accurately modeling electromechanical coupling in a soft-matter DEA, this theory can inform improvements in design and fabrication.

  2. Composition of the core from gallium metal-silicate partitioning experiments

    NASA Astrophysics Data System (ADS)

    Blanchard, I.; Badro, J.; Siebert, J.; Ryerson, F. J.

    2015-10-01

    Gallium concentration (normalized to CI chondrites) in the mantle is at the same level as that of lithophile elements with similar volatility, implying that there must be little to no gallium in Earth's core. Metal-silicate partitioning experiments, however, have shown that gallium is a moderately siderophile element and should be therefore depleted in the mantle by core formation. Moreover, gallium concentrations in the mantle (4 ppm) are too high to be only brought by the late veneer; and neither pressure, nor temperature, nor silicate composition has a large enough effect on gallium partitioning to make it lithophile. We therefore systematically investigated the effect of core composition (light element content) on the partitioning of gallium by carrying out metal-silicate partitioning experiments in a piston-cylinder press at 2 GPa between 1673 K and 2073 K. Four light elements (Si, O, S, C) were considered, and their effect was found to be sufficiently strong to make gallium lithophile. The partitioning of gallium was then modeled and parameterized as a function of pressure, temperature, redox and core composition. A continuous core formation model was used to track the evolution of gallium partitioning during core formation, for various magma ocean depths, geotherms, core light element contents, and magma ocean composition (redox) during accretion. The only model for which the final gallium concentration in the silicate Earth matched the observed value is the one involving a light-element rich core equilibrating in a FeO-rich deep magma ocean (>1300 km) with a final pressure of at least 50 GPa. More specifically, the incorporation of S and C in the core provided successful models only for concentrations that lie far beyond their allowable cosmochemical or geophysical limits, whereas realistic O and Si amounts (less than 5 wt.%) in the core provided successful models for magma oceans deeper that 1300 km. These results offer a strong argument for an O- and Si-rich core, formed in a deep terrestrial magma ocean, along with oxidizing conditions.

  3. Gallium-containing phospho-silicate glasses: synthesis and in vitro bioactivity.

    PubMed

    Franchini, Mirco; Lusvardi, Gigliola; Malavasi, Gianluca; Menabue, Ledi

    2012-08-01

    A series of Ga-containing phospho-silicate glasses based on Bioglass 45S5, having molar formula 46.2SiO2·24.3Na2O·26.9CaO·2.6P2O5·xGa2O3 (x=1.0, 1.6, 3.5), were prepared by fusion method. The reference Bioglass 45S5 without gallium was also prepared. The synthesized glasses were immersed in simulated body fluid (SBF) for 30 days in order to observe ion release and hydroxyapatite (HA) formation. All Ga-containing glasses maintain the ability of HA formation as indicated by main X-ray diffractometric peaks and/or electronic scanning microscopy results. HA layer was formed after 1 day of SBF soaking in 45S5 glass containing up to 1.6% Ga2O3 content. Moreover, gallium released by the glasses was found to be partially precipitated on the glass surface as gallium phosphate. Further increase in gallium content reduced the ion release in SBF. The maximum of Ga(3+) concentration measured in solution is ~6 ppm determined for 3.5% Ga2O3 content. This amount is about half of the toxic level (14 ppm) of gallium and the glasses release gallium till 30 days of immersion in SBF. Considering the above results, the studied materials can be proposed as bioactive glasses with additional antimicrobial effect of gallium having no toxic outcome. PMID:24364938

  4. Investigating the effect of gallium curcumin and gallium diacetylcurcumin complexes on the structure, function and oxidative stability of the peroxidase enzyme and their anticancer and antibacterial activities.

    PubMed

    Jahangoshaei, Parisa; Hassani, Leila; Mohammadi, Fakhrossadat; Hamidi, Akram; Mohammadi, Khosro

    2015-10-01

    Curcumin has a wide spectrum of biological and pharmacological activities including anti-inflammatory, antioxidant, antiproliferative, antimicrobial and anticancer activities. Complexation of curcumin with metals has gained attention in recent years for improvement of its stability. In this study, the effect of gallium curcumin and gallium diacetylcurcumin on the structure, function and oxidative stability of horseradish peroxidase (HRP) enzyme were evaluated by spectroscopic techniques. In addition to the enzymatic investigation, the cytotoxic effect of the complexes was assessed on bladder, MCF-7 breast cancer and LNCaP prostate carcinoma cell lines by MTT assay. Furthermore, antibacterial activity of the complexes against S. aureus and E. coli was explored by dilution test method. The results showed that the complexes improve activity of HRP and also increase its tolerance against the oxidative condition. After addition of the complexes, affinity of HRP for hydrogen peroxide substrate decreases, while the affinity increases for phenol substrate. Circular dichroism, intrinsic and synchronous fluorescence spectra showed that the enzyme structure around the catalytic heme group becomes less compact and also the distance between the heme group and tryptophan residues increases due to binding of the complexes to HRP. On the whole, it can be concluded that the change in the enzyme structure upon binding to the gallium curcumin and gallium diacetylcurcumin complexes results in an increase in the antioxidant efficiency and activity of the peroxidise enzyme. The result of anticancer and antibacterial activities suggested that the complexes exhibit the potential for cancer treatment, but they have no significant antibacterial activity. PMID:26369539

  5. Gallium in Feldspar Minerals - an Underutilized Source of Petrogenetic Information

    NASA Astrophysics Data System (ADS)

    Renno, A. D.

    2007-12-01

    The trace element gallium is routinely analyzed in all kind of rocks. Regardless of this fact it is rarely used as a petrogenetic indicator element. Arguably the best known exception is the discrimination of A-type granites according to the Ga/Al value. Interpreting these data requires our understanding of how Ga is distributed between coexisting crystal phases and liquids. Because of the great importance of the feldspar minerals for the geochemical evolution of Ga a two- step method for Ga analysis of feldspar minerals using the electron microprobe was developed. The first step includes a screening for increased Ga-values during the routine feldspar analyses. A threshold of 100 ppm Ga was used to define 'Ga-rich feldspars'. These feldspars were analyzed for Ga using a special routine with optimized conditions for trace element analysis. To minimize the well known effects of diffusion of alkaline metals and to maintain the high spatial resolution an accelerating voltage of 15 kV was used. In order to improve precision and the lower detection limit long peak counting times of 360 - 600 seconds were chosen. The background curvature and possible interferences of both Ga-Kα and Ga-Lα lines were studied using standards very poor in gallium. The influence of the beam current on the stability of different feldspar types was tested. In order to ensure the integrity of the sample and the compliance of the analytical task an optimal ratio of beam current to beam diameter has to be chosen for every analysis. Using optimal conditions with low spatial resolution a lower detection limit of 33 ppm was reached. Using this two-step method we found unexpected high Ga values in feldspars of different rock types. Characteristic examples are albite with a Ga-Ca - ratio of > 1 from albite granites in the Central Eastern Desert (Egypt) and zoned plagioclase from mafic microgranular enclaves in granites formed by magma mixing (Karkonosze Mountains in Poland) with Ga-contents greater than 1000 ppm.

  6. Micro and nano-structured green gallium indium nitride/gallium nitride light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Stark, Christoph J. M.

    Light-emitting diodes (LEDs) are commonly designed and studied based on bulk material properties. In this thesis different approaches based on patterns in the nano and micrometer length scale range are used to tackle low efficiency in the green spectral region, which is known as green gap. Since light generation and extraction are governed by microscopic processes, it is instructive to study LEDs with lateral mesa sizes scaled to the nanometer range. Besides the well-known case of the quantum size effect along the growth direction, a continuous lateral scaling could reveal the mechanisms behind the purported absence of a green gap in nanowire LEDs and the role of their extraction enhancement. Furthermore the possibility to modulate strain and piezoelectric polarization by post growth patterning is of practical interest, because the internal electric fields in conventional wurtzite GaN LEDs cause performance problems. A possible alternative is cubic phase GaN, which is free of built-in polarization fields. LEDs on cubic GaN could show the link between strong polarization fields and efficiency roll-off at high current densities, also known as droop. An additional problem for all nitride-based LEDs is efficient light extraction. For a planar GaN LED only roughly 8% of the generated light can be extracted. Novel lightextraction structures with extraction-favoring geometry can yield significant increase in light output power. To investigate the effect of scaling the mesa dimension, micro and nano-sized LED arrays of variable structure size were fabricated. The nano-LEDs were patterned by electron beam lithography and dry etching. They contained up to 100 parallel nano-stripe LEDs connected to one common contact area. The mesa width was varied over 1 ?m, 200 nm, and 50 nm. These LEDs were characterized electrically and optically, and the peak emission wavelength was found to depend on the lateral structure size. An electroluminescence (EL) wavelength shift of 3 nm towards smaller values was observed when the stripe width was reduced from 1 ?m to 50 nm. At the same time a strong fourfold enhancement of the light emission from the patterned region over the unpatterned area was observed. Micro-patterned LEDs showed non-linear scaling of the light output power, and an enhancement of 39 % was achieved for structures with an area fill ratio of 0.5 over an LED with square mesa. Growth of cubic GaN and cubic GaInN/GaN LEDs was shown by M-OVPE in Vshaped grooves formed by the {111} planes of etched silicon. SEM images of the GaN layer in small ( 0.5 ?m) regions show a contrast change where the phase boundary between cubic and wurtzite GaN is expected to occur. The growth parameter space is explored for optimal conditions while minimizing the alloying problem for GaN growth on Si. The cubic GaN phase is confirmed by electron back-scatter diffraction (EBSD) in the V-groove center, whereas wurtzite GaN is found near the groove edges. Luminescence of undoped GaN and GaInN/GaN multi-quantum well structures was studied by cathodoluminescence (CL). The undoped cubic GaN structure showed strong band-edge luminescence at 385 nm (3.22 eV) at 78 K, whereas for the MQW device strong emission at 498 nm is observed, even at room temperature. Full cubic LED structures were grown, and wavelength-stable electroluminescence at 489 nm was demonstrated. LEDs with integrated light extraction structures are grown on free-standing GaN substrates with different off-cut angles. The devices with different off-cut show pronounced features at the top surface that also penetrate the active region. For a 2.24 off-cut, these features resemble fish scales, where the feature sizes are in the ?m-range. The 2.24 off-cut LED shows a 3.6-fold increased light output power compared to a LED on virtually on-axis substrate with 0.06 off-cut. The enhancement found in the fish scale LEDs is attributed to increased light scattering, effectively reducing the fraction of trapped light. These results show the potential of structures on the micro and nanometer scale for LED device performance and the progress on cubic GaN could open alternative ways to understand the droop problem.

  7. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOEpatents

    Marks, Tobin J.; Chen, You-Xian

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  8. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOEpatents

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2002-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  9. Cleansing the colon in gallium-67 scintigraphy: a prospective comparison of regimens

    SciTech Connect

    Novetsky, G.J.; Turner, D.A.; Ali, A.; Raynor, W.J. Jr.; Fordham, E.W.

    1981-01-01

    Colonic accumulation of gallium-67 frequently complicates the interpretation of gallium-67 scintigrams. Although various modes of cleansing the colon prior to scintigraphy have been suggested, there is controversy over their efficacy and none have been tested prospectively. Three hundred nine patients undergoing gallium-67 scintigraphy were randomly assigned to one of four cleansing regimens: (1) a high fiber diet (78 patients); (2) castor oil (76); (3) milk of magnesia and cascara (76); and (4) not preparation (79). Patient compliance rates for the four regimens were 17%, 32%, 36%, and 46%, respectively. After noncompliant patients were excluded, gallium-67 scintigrams were graded for colonic activity on a scale of 0-3 by three independent, experienced observers. Gallium-67 activity in the colon was significantly less after administration of castor oil than after no preparation (p . 0.047). A high fiber diet also resulted in a substantial reduction of colonic activity when compared with no preparation; the difference, however, was not statistically significant (p . 0.083). Regimen 3 did not produce significantly better results than regimen 4 (p . 0.42). A major impediment to the success of any cleansing regimen seems to be poor compliance of patients.

  10. Cleansing the colon in gallium-67 scintigraphy: a prospective comparison of regimens

    SciTech Connect

    Novetsky, G.J.; Turner, D.A.; Ali, A.; Raynor, W.J.; Fordham, E.W.

    1981-11-01

    Colonic accumulation of gallium-67 frequently complicates the interpretation of gallium-67 scintigrams. Although various modes of cleansing the colon prior to scintigraphy have been suggested, there is controversy over their efficacy and none have been tested prospectively. Three hundred nine patients undergoing gallium-67 scintigraphy were randomly assigned to one of four cleansing regimens: (1) a high fiber diet (78 patients); (2) castor oil (76); (3) milk of magnesia and cascara (76); and (4) no preparation (79). Patient compliance rates for the four regimens were 17%, 32%, 36%, and 46%, respectively. After noncompliant patients were excluded, gallium-67 scintigrams were graded for colonic activity on a scale of 0-3 by three independent, experienced observers. Gallium-67 activity in the colon was significantly less after adminstration of castor oil than after no prepartion (p = 0.083). Regimen 3 did not produce significantly better results than regimen 4 (p = 0.42). A major impediment to the success of any cleansing regimen seems to be poor compliance of patients.

  11. Selective etching of focused gallium ion beam implanted regions from silicon as a nanofabrication method

    NASA Astrophysics Data System (ADS)

    Han, Zhongmei; Vehkamäki, Marko; Mattinen, Miika; Salmi, Emma; Mizohata, Kenichiro; Leskelä, Markku; Ritala, Mikko

    2015-07-01

    A focused ion beam (FIB) is otherwise an efficient tool for nanofabrication of silicon structures but it suffers from the poor thermal stability of the milled surfaces caused by segregation of implanted gallium leading to severe surface roughening upon already slight annealing. In this paper we show that selective etching with KOH:H2O2 solutions removes the surface layer with high gallium concentration while blocking etching of the surrounding silicon and silicon below the implanted region. This remedies many of the issues associated with gallium FIB nanofabrication of silicon. After the gallium removal sub-nm surface roughness is retained even during annealing. As the etching step is self-limited to a depth of 25-30 nm for 30 keV ions, it is well suited for defining nanoscale features. In what is essentially a reversal of gallium resistless lithography, local implanted areas can be prepared and then subsequently etched away. Nanopore arrays and sub-100 nm trenches can be prepared this way. When protective oxide masks such as Al2O3 grown with atomic layer deposition are used together with FIB milling and KOH:H2O2 etching, ion-induced amorphization can be confined to sidewalls of milled trenches.

  12. Cleansing the colon in gallium-67 scintigraphy: a prospective comparison of regimens.

    PubMed

    Novetsky, G J; Turner, D A; Ali, A; Raynor, W J; Fordham, E W

    1981-11-01

    Colonic accumulation of gallium-67 frequently complicates the interpretation of gallium-67 scintigrams. Although various modes of cleansing the colon prior to scintigraphy have been suggested, there is controversy over their efficacy and none have been tested prospectively. Three hundred nine patients undergoing gallium-67 scintigraphy were randomly assigned to one of four cleansing regimens: (1) a high fiber diet (78 patients); (2) castor oil (76); (3) milk of magnesia and cascara (76); and (4) not preparation (79). Patient compliance rates for the four regimens were 17%, 32%, 36%, and 46%, respectively. After noncompliant patients were excluded, gallium-67 scintigrams were graded for colonic activity on a scale of 0-3 by three independent, experienced observers. Gallium-67 activity in the colon was significantly less after administration of castor oil than after no preparation (p = 0.047). A high fiber diet also resulted in a substantial reduction of colonic activity when compared with no preparation; the difference, however, was not statistically significant (p = 0.083). Regimen 3 did not produce significantly better results than regimen 4 (p = 0.42). A major impediment to the success of any cleansing regimen seems to be poor compliance of patients. PMID:6270994

  13. Selective etching of focused gallium ion beam implanted regions from silicon as a nanofabrication method.

    PubMed

    Han, Zhongmei; Vehkamäki, Marko; Mattinen, Miika; Salmi, Emma; Mizohata, Kenichiro; Leskelä, Markku; Ritala, Mikko

    2015-07-01

    A focused ion beam (FIB) is otherwise an efficient tool for nanofabrication of silicon structures but it suffers from the poor thermal stability of the milled surfaces caused by segregation of implanted gallium leading to severe surface roughening upon already slight annealing. In this paper we show that selective etching with KOH:H2O2 solutions removes the surface layer with high gallium concentration while blocking etching of the surrounding silicon and silicon below the implanted region. This remedies many of the issues associated with gallium FIB nanofabrication of silicon. After the gallium removal sub-nm surface roughness is retained even during annealing. As the etching step is self-limited to a depth of 25-30 nm for 30 keV ions, it is well suited for defining nanoscale features. In what is essentially a reversal of gallium resistless lithography, local implanted areas can be prepared and then subsequently etched away. Nanopore arrays and sub-100 nm trenches can be prepared this way. When protective oxide masks such as Al2O3 grown with atomic layer deposition are used together with FIB milling and KOH:H2O2 etching, ion-induced amorphization can be confined to sidewalls of milled trenches. PMID:26062985

  14. Biofilm formation on titanium implants counteracted by grafting gallium and silver ions.

    PubMed

    Cochis, Andrea; Azzimonti, Barbara; Della Valle, Cinzia; Chiesa, Roberto; Arciola, Carla Renata; Rimondini, Lia

    2015-03-01

    Biofilm-associated infections remain the leading cause of implant failure. Thanks to its established biocompatibility and biomechanical properties, titanium has become one of the most widely used materials for bone implants. Engineered surface modifications of titanium able to thwart biofilm formation while endowing a safe anchorage to eukaryotic cells are being progressively developed. Here surfaces of disks of commercial grade 2 titanium for bone implant were grafted with gallium and silver ions by anodic spark deposition. Scanning electron microscopy of the surface morphology and energy dispersive X-ray spectroscopy were used for characterization. Gallium-grafted titanium was evaluated in comparison with silver-grafted titanium for both in vivo and in vitro antibiofilm properties and for in vitro compatibility with human primary gingival fibroblasts. Surface-modified materials showed: (i) homogeneous porous morphology, with pores of micrometric size; (ii) absence of cytotoxic effects; (iii) ability to support in vitro the adhesion and spreading of gingival fibroblasts; and (iv) antibiofilm properties. Although both silver and gallium exhibited in vitro strong antibacterial properties, in vivo gallium was significantly more effective than silver in reducing number and viability of biofilm bacteria colonies. Gallium-based treatments represent promising titanium antibiofilm coatings to develop new bone implantable devices for oral, maxillofacial, and orthopedic applications. PMID:25044610

  15. Synthesis and Structural characterization of β-ketoiminate-stabilized gallium hydrides for chemical vapor deposition applications.

    PubMed

    Marchand, Peter; Pugh, David; Parkin, Ivan P; Carmalt, Claire J

    2014-08-11

    Bis-β-ketoimine ligands of the form [(CH2 )n {N(H)C(Me)CHC(Me)O}2 ] (L(n) H2 , n=2, 3 and 4) were employed in the formation of a range of gallium complexes [Ga(L(n) )X] (X=Cl, Me, H), which were characterised by NMR spectroscopy, mass spectrometry and single-crystal X-ray diffraction analysis. The β-ketoimine ligands have also been used for the stabilisation of rare gallium hydride species [Ga(L(n) )H] (n=2 (7); n=3 (8)), which have been structurally characterised for the first time, confirming the formation of five-coordinate, monomeric species. The stability of these hydrides has been probed through thermal analysis, revealing stability at temperatures in excess of 200 °C. The efficacy of all the gallium β-ketoiminate complexes as molecular precursors for the deposition of gallium oxide thin films by chemical vapour deposition (CVD) has been investigated through thermogravimetric analysis and deposition studies, with the best results being found for a bimetallic gallium methyl complex [L(3) {GaMe2 }2 ] (5) and the hydride [Ga(L(3) )H] (8). The resulting films (F5 and F8, respectively) were amorphous as-deposited and thus were characterised primarily by XPS, EDXA and SEM techniques, which showed the formation of stoichiometric (F5) and oxygen-deficient (F8) Ga2 O3 thin films. PMID:25043194

  16. The global anthropogenic gallium system: determinants of demand, supply and efficiency improvements.

    PubMed

    Løvik, Amund N; Restrepo, Eliette; Müller, Daniel B

    2015-05-01

    Gallium has been labeled as a critical metal due to rapidly growing consumption, importance for low-carbon technologies such as solid state lighting and photovoltaics, and being produced only as a byproduct of other metals (mainly aluminum). The global system of primary production, manufacturing, use and recycling has not yet been described or quantified in the literature. This prevents predictions of future demand, supply and possibilities for efficiency improvements on a system level. We present a description of the global anthropogenic gallium system and quantify the system using a combination of statistical data and technical parameters. We estimated that gallium was produced from 8 to 21% of alumina plants in 2011. The most important applications of gallium are NdFeB permanent magnets, integrated circuits and GaAs/GaP-based light-emitting diodes, demanding 22-37%, 16-27%, and 11-21% of primary metal production, respectively. GaN-based light-emitting diodes and photovoltaics are less important, both with 2-6%. We estimated that 120-170 tons, corresponding to 40-60% of primary production, ended up in production wastes that were either disposed of or stored. While demand for gallium is expected to rise in the future, our results indicated that it is possible to increase primary production substantially with conventional technology, as well as improve the system-wide material efficiency. PMID:25884251

  17. Metal alloy identifier

    DOEpatents

    Riley, William D.; Brown, Jr., Robert D.

    1987-01-01

    To identify the composition of a metal alloy, sparks generated from the alloy are optically observed and spectrographically analyzed. The spectrographic data, in the form of a full-spectrum plot of intensity versus wavelength, provide the "signature" of the metal alloy. This signature can be compared with similar plots for alloys of known composition to establish the unknown composition by a positive match with a known alloy. An alternative method is to form intensity ratios for pairs of predetermined wavelengths within the observed spectrum and to then compare the values of such ratios with similar values for known alloy compositions, thereby to positively identify the unknown alloy composition.

  18. Gallium Nitride high temperature electronics for Venus 90-day Lander

    NASA Astrophysics Data System (ADS)

    Frampton, Robert; Peltz, Leora; Rubin, Seymour

    2008-09-01

    NASA Science exploration Roadmap includes a "Venus Mobile Lander" mission to operate on the surface of Venus for at least 90 days. Venus Mobile Lander will explore Venus surface as either an aerial vehicle or rover for several months. Previous missions to Venus operated for less than 2 hours. Electronics available today is not capable of supporting design of spacecraft avionics, power systems, or science instruments to operate in the Venus surface environment for 90 days. Thus this long duration mission will spawn a technology development program that can support science instrument and spacecraft design to meet mission requirements. Boeing, together with HRL Laboratory, is developing high temperature electronics for the Venus environment (480 Celsius, 90 bars carbon dioxide atmosphere) using the gallium nitride technology. Examples from our recent validation tests in harsh environments illustrate the performance of the electronic components and modules. In addition to the GaN-based semiconductor material, the characteristics, reliability and viability of the electronics is affected by constituent materials (metallization, dielectric layers) and by the packaging (die attach, wire bonding).

  19. Packaging of an iron-gallium (Galfenol) nanowire acoustic sensor

    NASA Astrophysics Data System (ADS)

    Jain, Rupal; McCluskey, F. Patrick; Flatau, Alison B.; Stadler, Bethanie J. H.

    2007-04-01

    Packaging is a key issue for the effective working of an iron-gallium (Galfenol) nanowire acoustic sensor for underwater applications. The nanowire acoustic sensor incorporates cilia-like nanowires made of galfenol, a magnetostrictive material, which responds by changing magnetic flux flowing through it due to bending stress induced by the incoming acoustic waves. This stress induced change in the magnetic flux density is detected by a GMR sensor. An effective package should provide a suitably protective environment to these nanowires, while allowing sound waves to reach the nanowires with a minimum level of attenuation. A bio-inspired MEMS package has been designed, analogous to a human-ear cochlea for the nanowire acoustic sensor. In this paper, the process sequence for fabrication of the package is presented. Unlike other microphones, the nanoacoustic sensor has been enclosed in a cavity to allow free movement of the nanowires in a fluid medium. The package also ensures resisting ingression of sea water and salt ions to prevent the corrosion of sensor components. The effect of package material on sensor performance was investigated by conducting experiments on acoustic impedance and attenuation characteristics, and salt water absorption properties. The package filled with silicone oil and molded with polydimethylsiloxane (PDMS) is observed to outperform other packages at all frequencies by minimizing attenuation of the acoustic waves.

  20. Greyscale proton beam writing in p-type Gallium Arsenide

    NASA Astrophysics Data System (ADS)

    Diering, D.; Spemann, D.; Lenzner, J.; Mller, St.; Bntgen, T.; von Wenckstern, H.

    2013-07-01

    Proton beam writing (PBW) is a well known method for micromachining, e.g. of semiconductors. Up to now, only few indication is given on how the resulting structure height in micromachined semiconductors can be controlled by means of fluence variation. This approach for 3D-microstructuring, called Greyscale PBW, was already successfully demonstrated for negative photoresists. In this study (1 0 0) p-type Gallium Arsenide (GaAs) was irradiated with 2.28 MeV protons and fluences in the range from 1.21014 H+ cm-2 to 1.01018 H+ cm-2 at the ion beam laboratory LIPSION and subsequently electrochemically etched with 10%-KOH. A linear dependency of structure height on ion fluence was established. In this way, pyramid-like structures as well as concave-shaped structures could be created. GaAs showed a lateral anisotropic etch behaviour during the development step with preferential etching along the [0 1 1] directions. On some structures the surface roughness and the change of conductivity were investigated by atomic force and scanning capacitance microscopy, respectively. The rms roughness of the surface of the structures was 5.4 nm and 10.6 nm for a fluence of 7.81015 H+ cm-2 and 1.21017 H+ cm-2, respectively. We observed an increasing etching rate for fluences larger than 1016 H+ cm-2.

  1. Epitaxial Zinc Oxide Semiconductor Film deposited on Gallium Nitride Substrate

    NASA Astrophysics Data System (ADS)

    McMaster, Michael; Oder, Tom

    2011-04-01

    Zinc oxide (ZnO) is a wide bandgap semiconductor which is very promising for making efficient electronic and optical devices. The goal of this research was to produce high quality ZnO film on gallium nitride (GaN) substrate by optimizing the substrate temperature. The GaN substrates were chemically cleaned and mounted on a ceramic heater and loaded into a vacuum deposition chamber that was pumped down to a base pressure of 3 x 10-7 Torr. The film deposition was preceded by a 30 minute thermal desorption carried in vacuum at 500 ^oC. The ZnO thin film was then sputter-deposited using an O2/Ar gas mixture onto GaN substrates heated at temperatures varying from 20 ^oC to 500 ^oC. Post-deposition annealing was done in a rapid thermal processor at 900 ^oC for 5 min in an ultrapure N2 ambient to improve the crystal quality of the films. The films were then optically characterized using photoluminescence (PL) measurement with a UV laser excitation. Our measurements reveal that ZnO films deposited on GaN substrate held at 200 ^oC gave the best film with the highest luminous intensity, with a peak energy of 3.28 eV and a full width half maximum of 87.4 nm. Results from low temperature (10 K) PL measurements and from x-ray diffraction will also be presented.

  2. Aligned Gallium Nitride Nanowire Growth by Chemical Beam Epitaxy Method

    NASA Astrophysics Data System (ADS)

    Munden, Ryan; Vacic, Aleksandar; Castiglione, Erik; Guan, Weihua; Broadbridge, Christine; Reed, Mark

    2009-03-01

    Gallium Nitride (GaN) Nanowires (NWs) have successfully been grown via a chemical beam epitaxy method. Source gases of Trimethylgallium (TMGa) and Ammonia (NH3) are impinged directly onto a hot growth substrate (800 C) in high vacuum (1x10-8 torr, base; 1x10-5 torr, growth). A thin metal film acts as catalyst, but NWs were also grown without catalyst. By this method NWs have been grown on silicon, alumina, sapphire, and GaN-film substrates. NWs grown on GaN films grow aligned to the growth substrate, perpendicular to the c-plane GaN film surface. Wires aligned to the GaN a-planes can also be observed. NWs have been studied by SEM, TEM, and electrical characterization. NW lengths are 2.5 micron with diameters of 25 nm. NWs are uniform, straight, and aligned with the substrate over large areas. However closer inspection of the NWs by TEM shows that the NWs are often polycrystalline in nature. There are distinct segments ``stacked'' into a nanowire leading to noticeable diameter variations on the nanoscale. Diameter modulation can be enhanced through choice of growth substrate, temperature, and pulsing of the TMGa source.

  3. Low-temperature thermal conductivity of terbium-gallium garnet

    SciTech Connect

    Inyushkin, A. V. Taldenkov, A. N.

    2010-11-15

    Thermal conductivity of paramagnetic Tb{sub 3}Ga{sub 5}O{sub 12} (TbGG) terbium-gallium garnet single crystals is investigated at temperatures from 0.4 to 300 K in magnetic fields up to 3.25 T. A minimum is observed in the temperature dependence {kappa}(T) of thermal conductivity at T{sub min} = 0.52 K. This and other singularities on the {kappa}(T) dependence are associated with scattering of phonons from terbium ions. The thermal conductivity at T = 5.1 K strongly depends on the magnetic field direction relative to the crystallographic axes of the crystal. Experimental data are considered using the Debye theory of thermal conductivity taking into account resonance scattering of phonons from Tb{sup 3+} ions. Analysis of the temperature and field dependences of the thermal conductivity indicates the existence of a strong spin-phonon interaction in TbGG. The low-temperature behavior of the thermal conductivity (field and angular dependences) is mainly determined by resonance scattering of phonons at the first quasi-doublet of the electron spectrum of Tb{sup 3+} ion.

  4. Investigation of a Gallium MPD Thruster with an Ablating Cathode

    NASA Technical Reports Server (NTRS)

    Thomas, Robert E.; Burton, Rodney L.; Polzin, Kurt A.

    2010-01-01

    Arc impedance, exhaust velocity, and plasma probe measurements are presented. The thruster is driven by a 50 microsecond pulse from a 6.2 milliohm pulse forming network, and gallium is supplied to the discharge by evaporation of the cathode. The arc voltage is found to vary linearly with the discharge current with an arc impedance of 6.5 milliohms. Electrostatic probes yield an exhaust velocity that is invariant with the discharge current and has a peak value of 20 kilometers per second, which is in reasonable agreement with the value (16 plus or minus 1 kilometer per second) calculated from the mass bit and discharge current data. Triple probe measurements yield on axis electron temperatures in the range of 0.8-3.8 eV, electron densities in the range of 1.6 x 10(exp 21) to 2.1 x 10(exp 22) per cubic meter, and a divergence half angle of 16 degrees. Measurements within the interelectrode region yield a peak magnetic field of 0.8 T, and the observed radial trends are consistent with an azimuthally symmetric current distribution. A cathode power balance model is coupled with an ablative heat conduction model predicting mass bit values that are within 20% of the experimental values.

  5. Nanostructured gallium nitride powder functionalized with a fluorophore terminated peptide

    NASA Astrophysics Data System (ADS)

    Berg, Nora; Ivanisevic, Albena

    2015-09-01

    Nanostructured gallium nitride (GaN) powder was functionalized with a biomolecule terminated with a fluorophore. The fluorophore was used to enhance and modulate the luminescent properties of the semiconductor powder. A simple two-step wet-chemistry in situ modification approach resulted in covalent attachment of the peptide to the powder. X-ray photoelectron spectroscopy survey data confirmed qualitatively that the peptide molecules were successfully attached to the surface of the powder with the presence of a phosphorus peak as well as an increase in nitrogen atomic percentage on the surface of the material. The bonding and stability of the modification to the nanostructured surface was assessed by quantitatively analyzing high-resolution regional scans. Photoluminescence Spectroscopy mapped changes to the optical properties of the powder upon dye terminated peptide attachment. A clear shift in the luminescence peak was recorded after the powder was functionalized. The results demonstrate a straight-forward way to alter the emission characteristics of a nanostructured semiconductor material. The role of material defects on the powder surface is used to explain the initial and altered luminescence properties.

  6. Enhanced photothermal conversion in vertically oriented gallium arsenide nanowire arrays.

    PubMed

    Walia, Jaspreet; Dhindsa, Navneet; Flannery, Jeremy; Khodabad, Iman; Forrest, James; LaPierre, Ray; Saini, Simarjeet S

    2014-10-01

    The photothermal properties of vertically etched gallium arsenide nanowire arrays are examined using Raman spectroscopy. The nanowires are arranged in square lattices with a constant pitch of 400 nm and diameters ranging from 50 to 155 nm. The arrays were illuminated using a 532 nm laser with an incident energy density of 10 W/mm(2). Nanowire temperatures were highly dependent on the nanowire diameter and were determined by measuring the spectral red-shift for both TO and LO phonons. The highest temperatures were observed for 95 nm diameter nanowires, whose top facets and sidewalls heated up to 600 and 440 K, respectively, and decreased significantly for the smaller or larger diameters studied. The diameter-dependent heating is explained by resonant coupling of the incident laser light into optical modes of the nanowires, resulting in increased absorption. Photothermal activity in a given nanowire diameter can be optimized by proper wavelength selection, as confirmed using computer simulations. This demonstrates that the photothermal properties of GaAs nanowires can be enhanced and tuned by using a photonic lattice structure and that smaller nanowire diameters are not necessarily better to achieve efficient photothermal conversion. The diameter and wavelength dependence of the optical coupling could allow for localized temperature gradients by creating arrays which consist of different diameters. PMID:25233265

  7. Spin-phonon coupling in scandium doped gallium ferrite

    SciTech Connect

    Chakraborty, Keka R. E-mail: smyusuf@barc.gov.in; Mukadam, M. D.; Basu, S.; Yusuf, S. M. E-mail: smyusuf@barc.gov.in; Paul, Barnita; Roy, Anushree; Grover, Vinita; Tyagi, A. K.

    2015-03-28

    We embarked on a study of Scandium (Sc) doped (onto Ga site) gallium ferrite (GaFeO{sub 3}) and found remarkable magnetic properties. In both doped as well as parent compounds, there were three types of Fe{sup 3+} ions (depending on the symmetry) with the structure conforming to space group Pna2{sub 1} (Sp. Grp. No. 33) below room temperature down to 5?K. We also found that all Fe{sup 3+} ions occupy octahedral sites, and carry high spin moment. For the higher Sc substituted sample (Ga{sub 1?x}Sc{sub x}FeO{sub 3}: x?=?0.3), a canted magnetic ordered state is found. Spin-phonon coupling below Nel temperature was observed in doped compounds. Our results indicated that Sc doping in octahedral site modifies spin-phonon interactions of the parent compound. The spin-phonon coupling strength was estimated for the first time in these Sc substituted compounds.

  8. Unusually low thermal conductivity of gallium nitride nanowires

    NASA Astrophysics Data System (ADS)

    Guthy, Csaba; Nam, Chang-Yong; Fischer, John E.

    2008-03-01

    We report measurements of thermal conductivity κ on individual gallium nitride nanowires (GaN NWs) with diameters ranging from 97to181nm grown by thermal chemical vapor deposition. We observed unexpectedly small κ values, in the range of 13-19W/mK at 300K, with very weak diameter dependence. We also observe unusual power law κ ˜Tn behavior with n =1.8 at low temperature. Electron-energy-loss-spectroscopy measurements indicate Si and O concentrations in the ranges of 0.1-1 and 0.01-0.1at.%, respectively. Based on extensive numerical calculations, we conclude that both the unexpectedly low κ and the T1.8 dependence are caused by unusually large mass-difference scattering, primarily from Si impurities. Our analysis also suggests that mass-difference scattering rates are significantly enhanced by the reduced phonon group velocity in nanoscale systems. Planar defects running the length of the NW, previously characterized in detail, may also play a role in limiting the phonon mean free path.

  9. Hydrogenation of palladium rich compounds of aluminium, gallium and indium

    SciTech Connect

    Kohlmann, H.

    2010-02-15

    Palladium rich intermetallic compounds of aluminium, gallium and indium have been studied before and after hydrogenation by powder X-ray diffraction and during hydrogenation by in situ thermal analysis (DSC) at hydrogen gas pressures up to 39 MPa and temperatures up to 700 K. Very weak DSC signals and small unit cell increases of below 1% for AlPd{sub 2}, AlPd{sub 3}, GaPd{sub 2}, Ga{sub 5}Pd{sub 13}, In{sub 3}Pd{sub 5}, and InPd{sub 2} suggest negligible hydrogen uptake. In contrast, for both tetragonal modifications of InPd{sub 3} (ZrAl{sub 3} and TiAl{sub 3} type), heating to 523 K at 2 MPa hydrogen pressure leads to a rearrangement of the intermetallic structure to a cubic AuCu{sub 3} type with an increase in unit cell volume per formula unit by 3.6-3.9%. Gravimetric analysis suggests a composition InPd{sub 3}H{sub a}pprox{sub 0.8} for the hydrogenation product. Very similar behaviour is found for the deuteration of InPd{sub 3}. - Graphical abstract: In situ differential scanning calorimetry of the hydrogenation of tetragonal InPd{sub 3} (ZrAl{sub 3} type) at 1.3 MPa hydrogen pressure.

  10. Promises and failures of gallium as an antibacterial agent.

    PubMed

    Minandri, Fabrizia; Bonchi, Carlo; Frangipani, Emanuela; Imperi, Francesco; Visca, Paolo

    2014-01-01

    Gallium has a long history as a diagnostic and chemotherapeutic agent. The pharmacological properties of Ga(III) rely on chemical mimicry; when Ga(III) is exogenously supplied to living cells it can replace Fe(III) within target molecules, thereby perturbing bacterial metabolism. Ga(III)-induced metabolic distresses are dramatic in fast-growing cells, like bacterial cells. Interest in the antibacterial properties of Ga(III) has been raised by the compelling need for novel drugs to combat multidrug-resistant bacteria and by the shortage of new antibiotic candidates in the pharmaceutical pipeline. Ga(III) activity has been demonstrated, both in vitro and in animal models of infections, on several bacterial pathogens, also including intracellular and biofilm-forming bacteria. Ga(III) activity is affected by iron availability and the metabolic state of the cell, being maximal in iron-poor media and in respiring cells. Synergism between Ga(III) and antibiotics holds promise as last resort therapy for infections sustained by pandrug-resistant bacteria. PMID:24762310

  11. Gallium arsenide deep-level optical emitter for fibre optics.

    PubMed

    Pan, Janet L; McManis, Joseph E; Osadchy, Thomas; Grober, Louise; Woodall, Jerry M; Kindlmann, Peter J

    2003-06-01

    Fibre-optic components fabricated on the same substrate as integrated circuits are important for future high-speed communications. One industry response has been the costly push to develop indium phosphide (InP) electronics. However, for fabrication simplicity, reliability and cost, gallium arsenide (GaAs) remains the established technology for integrated optoelectronics. Unfortunately, the GaAs bandgap wavelength (0.85 microm) is far too short for fibre optics at 1.3-1.5 microm. This has led to work on materials that have a large lattice mismatch on GaAs. Here we demonstrate the first light-emitting diode (LED) that emits at 1.5 microm fibre-optic wavelengths in GaAs using optical transitions from arsenic antisite (As(Ga)) deep levels. This is an enabling technology for fibre-optic components that are lattice-matched to GaAs integrated circuits. We present experimental results showing significant internal optical power (24 mW) and speed (in terahertz) from GaAs optical emitters using deep-level transitions. Finally, we present theory showing the ultimate limit to the efficiency-bandwidth product of semiconductor deep-level optical emitters. PMID:12738958

  12. Spectrum of gallium-67 renal activity in patients with no evidence of renal disease

    SciTech Connect

    Garcia, J.E.; Van Nostrand, D.; Howard, W.H. III; Kyle, R.W.

    1984-05-01

    Thirty-seven gallium-67 images were reviewed retrospectively to determine relative renal gallium activity (RGA) in patients with no evidence of renal disease. Twenty-four patients were classified as having no evidence of renal disease (NRD). RGA was identified in 50.0% (12/24) of patients in the NRD group. The authors conclude that the presence of RGA neither suggests nor rules out renal disease. Altered nonrenal biological factors (such as saturation of iron-binding capacity) may decrease soft-tissue gallium accumulation while activity in the kidney remains unchanged. The latter provides renal images with better signal-to-noise ratio. Current imaging equipment may allow renal visualization in these patients.

  13. Process for producing gallium-containing solution from aluminum smelting dust

    SciTech Connect

    Ikeda, H.; Matsui, S.; Era, A.

    1988-02-16

    A process for producing a gallium-containing solution from aluminum smelting dust is described comprising mixing aluminum smelting dust with 5 to 50% by weight of an alkaline flux selected from the group consisting of sodium carbonate, sodium hydroxide, potassium carbonate, potassium hydroxide and mixtures thereof, heating the mixture to a temperature sufficient to roast the mixture without fusing the mixture, leaching the roasted mixture at a temperature of 80/sup 0/C. to 100/sup 0/C. with a mineral acid selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid and mixtures thereof to preferentially solubilize gallium from other material in the roasted mixture, and filtering the leached mixture to separate the solubilized gallium solution therefrom.

  14. Renal gallium accumulation in rats with antibiotic-induced nephritis: clinical implications. Concise communication

    SciTech Connect

    Taylor, A.; Nelson, H.; Vasquez, M.; Hollenbeck, J.

    1980-07-01

    To determine the effect of antibiotic-induced nephrotoxicity on the renal accumulation of gallium, groups of ten Sprague-Dawley rats were given intraperitoneal injections of gentamycin, amphotericin, or neomycin for a period of 16 to 21 days. In all cases, mild to moderate nephrotoxicity was documented by one or more of the following parameters: serum creatinine, renal weight, urine volume (renal concentrating ability), light microscopy, and electron microscopy. In none of these cases was the renal accumulation of gallium increased over control values. Consequently, diffuse renal accumulation of gallium in patients with subclinical or mild nephrotoxicity is unlikely to be related to short-term treatment with aminoglycosides or amphotericin. In such cases, the physician should seek some other clinical explanation, such as infection.

  15. Gallium oxide films for filter and solar-blind UV detector

    NASA Astrophysics Data System (ADS)

    Ji, Zhenguo; Du, Juan; Fan, Jia; Wang, Wei

    2006-03-01

    Gallium oxide thin films were deposited by pulsed spray pyrolysis in air using ethanol solution of gallium trichloride as precursor. X-ray diffraction measurements showed that monoclinic gallium oxide thin films were formed. The optical band-gap of the film deposited on quartz substrates was 5.16 eV, and the transmittance was greater than 80% for ? > 275 nm, as determined by UV-vis absorption spectrum. Photoconductivity of Ga2O3 film with inter-digital electrodes showed a weak sensitivity to direct sun light, while a very strong sensitivity to 254 nm UV light, which indicating possible applications of ?-Ga2O3 in solar-blind UV-detection and deep UV transparent conducting materials.

  16. Interplay of disorder and geometrical frustration in doped gadolinium gallium garnet.

    PubMed

    Woo, N; Silevitch, D M; Ferri, C; Ghosh, S; Rosenbaum, T F

    2015-07-29

    The geometrically frustrated triangular antiferromagnet Gadolinium Gallium Garnet (Gd3Ga5O12 or GGG) exhibits a rich mix of short-range order and isolated quantum states. We investigate the effects of up to 1% neodymium substitution for gallium on the ac magnetic response at temperatures below 1?K in both the linear and nonlinear regimes. Substitutional disorder actually drives the system toward a more perfectly frustrated state, apparently compensating for the effects of imperfect gadolinium/gallium stoichiometry, while at the same time more closely demarcating the boundaries of isolated, coherent clusters composed of hundreds of spins. Optical measurements of the local Nd environment substantiate the picture of an increased frustration index with doping. PMID:26154501

  17. Gallium-assisted growth of silicon nanowires by electron cyclotron resonance plasmas

    NASA Astrophysics Data System (ADS)

    Hernández, M. J.; Cervera, M.; Ruiz, E.; Pau, J. L.; Piqueras, J.; Avella, M.; Jiménez, J.

    2010-11-01

    The use of gallium droplets for growing Si nanowires (SiNWs) by electron cyclotron resonance plasmas is investigated. First, the relationship between evaporation time and resultant size of the gallium droplets is studied. Through the use of spectroscopic ellipsometry, the dependence of the surface plasmon resonance (SPR) energy on the droplet size is determined. From these gallium droplets, SiNWs were grown at 300 and 550 °C in electron cyclotron resonance plasmas containing SiH4, Ar, and H2. Scanning electron microscopy results show that tapered NWs are obtained for a wide range of growth conditions. Besides, it is found that H2 plays an important role in the parasitic axial growth of the SiNWs. Namely, H2 inhibits the radial growth and contributes dramatically to increasing the SiNW defects.

  18. Gallium scanning in differentiating malignant from benign asbestos-related pleural disease

    SciTech Connect

    Teirstein, A.S.; Chahinian, P.; Goldsmith, S.J.; Sorek, M.

    1986-01-01

    In order to assess the utility of 67gallium citrate in delineating malignant pleural mesothelioma from benign asbestos-related pleural disease, 49 patients with malignant mesothelioma and 16 with benign asbestos-related pleural disease were studied. Seven patients with malignant mesothelioma had no history of asbestos exposure, while the remaining 58 patients were exposed. Forty-three of the 49 patients (88%) with malignant mesothelioma had a positive 67gallium scan including 36 of the 42 (86%) patients with asbestos exposure and all 7 patients without a history of asbestos exposure. Three of 16 patients (19%) with benign asbestos-related pleural disease had a positive scan. 67Gallium radionuclide imaging is nonspecific but may be valuable in noninvasive monitoring of asbestos-exposed populations, which have a high risk for the late development of benign and/or malignant pleural disease.

  19. Piecewise simulaton proton test of gallium arsenide and thin silicon solar cells

    NASA Technical Reports Server (NTRS)

    Peterson, D. G.; Billets, S. A.

    1984-01-01

    Gallium Arsenide (GaAs) solar cells are viewed as a potential primary power source on certain future Earth orbiting satellites. However, the relative merits of gallium arsenide over silicon in a space radiation environment are largely unknown because a general degradation model for gallium arsenide does not exist. The results of a test simulating the proton radiation environment existing in a polar orbit and the concomitant effects on GaAs and thin silicon (Si) solar cells are presented. The objectives and methodology of the simulation test were discussed. The electrical characteristics of GaAs and Si solar cells are given in graph form. It was concluded that GaAs cells are viable for use on satellites in low Earth orbit.

  20. Gallium-based thermal interface material with high compliance and wettability

    NASA Astrophysics Data System (ADS)

    Gao, Yunxia; Liu, Jing

    2012-06-01

    This study reports a gallium-based thermal interface material (GBTIM) consisting of gallium oxides dispersed uniformly into the 99 % gallium metal. The wettability of GBTIM with other materials is disclosed and compared. The thermal conductivity of GBTIM measured by a computer-controlled Mathis TCi thermal analyzer is 13.07 W m-1 K-1 at room temperature, which is significantly higher than that of conventional thermal greases. An experimental facility is described to measure the thermal resistance across the GBTIM under steady-state conditions and the thermal interface resistance is measured as low as 2.6 mm2 kW-1 with a pressure of 0.05 MPa, which is an order lower than that of the best commercialized thermal greases. Further, the GBTIM is formed into a desired shape to enhance thermal transfer, such as semi-liquid paste or thermal pad, which can be cut into a required shape.

  1. Scintigraphy with gallium-67 citrate in staging of soft-tissue sarcomas of the extremity

    SciTech Connect

    Finn, H.A.; Simon, M.A.; Martin, W.B.; Darakjian, H.

    1987-07-01

    We performed a retrospective study of sixty patients who had a soft-tissue sarcoma of the extremity to determine the usefulness of scintigraphy with gallium-67 citrate as a staging modality. Abnormal activity of the gallium was present in forty-one of forty-eight sites in which there was macroscopic primary tumor. In six of the forty-eight patients, the imaging demonstrated non-pulmonary metastases that had not been detected by any other staging studies. Scintigraphy with gallium-67 citrate should be employed routinely for staging of soft-tissue sarcomas because of its utility in detecting non-pulmonary metastases that are not otherwise detected on routine staging studies.

  2. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    SciTech Connect

    Yang, Seong-Uk; Jung, Woo-Shik; Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho; Park, Jin-Hong

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  3. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    NASA Astrophysics Data System (ADS)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-01

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, Pmax was 8.91nW/cm with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  4. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    SciTech Connect

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  5. Total neutron scattering investigation of the structure of a cobalt gallium oxide spinel prepared by solvothermal oxidation of gallium metal

    NASA Astrophysics Data System (ADS)

    Playford, Helen Y.; Hannon, Alex C.; Tucker, Matthew G.; Lees, Martin R.; Walton, Richard I.

    2013-11-01

    A new solvothermal synthesis route to mixed-metal gallium oxides with the spinel structure has been developed for ternary oxides of ideal composition Ga3-xMxO4-y (M=Co, Zn, Ni). The structure of the novel cobalt gallate produced in this manner, Ga1.767(8)Co0.973(8)O3.752(8), has been determined from total neutron scattering to be a partially defective spinel with mixed-valent cobalt (approximately 25% Co3+ and 75% Co2+) and with vacancies on approximately 6% of oxygen sites. Pair distribution function (PDF) analysis reveals significant local deviations from the average cubic structure, which are attributed to the conflicting coordination preferences of the Co2+ (potential Jahn-Teller distortion) and Ga3+ (Ga off-centring). Reverse Monte Carlo (RMC) modelling supports this conclusion since different metal-oxygen bond-distance distributions are found for the two cations in the refined configuration. An investigation of magnetic properties shows evidence of short-range magnetic order and spin-glass-like behaviour, consistent with the structural disorder of the material.

  6. Crystal chemistry and self-lubricating properties of monochalcogenides gallium selenide and tin selenide

    SciTech Connect

    Erdemir, A.

    1993-02-01

    This paper describes the fundamentals of the crystal chemistry and self-lubricating mechanisms of two monochalcogenides; tin selenide and gallium selenide. Specifically, it enumerates their inter-atomic array and bond structure in crystalline states, and correlates this fundamental knowledge with their self-lubricating capacity. Friction tests assessing the self-lubricating performance of gallium and tin selenides were carried out on a pin-on-disk machine. Specifically, large crystalline pieces of gallium selenide and tin selenide were cut and cleaved into flat squares and subsequently rubbed against the sapphire balls. In another case, the fine powders (particle size {approx} 50--100 {mu}m) of gallium selenide and tin selenide were manually fed into the sliding interfaces of 440C pins and 440C disks. For the specific test conditions explored, it was found that the friction coefficients of the sapphire/gallium selenide and sapphire/tin selenide pairs were {approx} 0.23 and {approx} 0.35, respectively. The friction coefficients of 440C pin/440C disk test pairs with gallium selenide and tin selenide powders were on the orders of {approx} 0.22 and {approx} 0.38, respectively. For comparison, a number of parallel friction tests were performed with MoS{sub 2} powders and compacts and the results of these tests were also reported. The friction data together with the crystal-chemical knowledge and the electron microscopic evidence supported the conclusion that the lubricity and self-lubricating mechanisms of these solids are closely related to their crystal chemistry and the nature of interlayer bonding.

  7. Aspergillosis of the sphenoid sinus: presentation as a pituitary mass and postoperative gallium-67 imaging.

    PubMed

    Parker, K M; Nicholson, J K; Cezayirli, R C; Biggs, P J

    1996-04-01

    Invasive aspergillosis of the paranasal sinuses is an uncommon, but well-recognized, form of fungal infection. We describe an elderly female patient with invasive aspergillosis of the sphenoid sinus and associated osteomyelitis of the skull base, with clinical presentation as a pituitary mass. Postoperative gallium scan showed intense uptake in the sphenoid sinus, which resolved after treatment with amphotericin-B. This case demonstrates some of the pathologic and clinical features of invasive aspergillosis and suggests a potential role for gallium-67 imagining in monitoring clinical response to therapy. PMID:8607085

  8. Results of the Gallium-Clad Phase 3 and Phase 4 tasks (canceled prior to completion)

    SciTech Connect

    Morris, R.N.

    1998-08-01

    This report summarizes the results of the Gallium-Clad interactions Phase 3 and 4 tasks. Both tasks were to involve examining the out-of-pile stability of residual gallium in short fuel rods with an imposed thermal gradient. The thermal environment was to be created by an electrical heater in the center of the fuel rod and coolant flow on the rod outer cladding. Both tasks were canceled due to difficulties with fuel pellet fabrication, delays in the preparation of the test apparatus, and changes in the Fissile Materials Disposition program budget.

  9. Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power Transistors

    NASA Technical Reports Server (NTRS)

    Patterson, Richard L.; Boomer, Kristen T.; Scheick, Leif; Lauenstein, Jean-Marie; Casey, Megan; Hammoud, Ahmad

    2014-01-01

    The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.

  10. Growth of epitaxial bismuth and gallium substituted lutetium iron garnet films by pulsed laser deposition

    SciTech Connect

    Leitenmeier, Stephan; Heinrich, Andreas; Lindner, Joerg K. N.; Stritzker, Bernd

    2006-04-15

    Epitaxial bismuth and gallium substituted lutetium iron garnet thin films have been grown on (100) oriented gadolinium gallium garnet Gd{sub 3}Ga{sub 5}O{sub 12} substrates by pulsed laser deposition. The films have been studied using x-ray diffraction, high resolution x-ray diffraction, Rutherford backscattering spectroscopy, transmission electron microscopy, and electron diffraction. We obtained smooth films with thicknesses between 0.3 and 1.0 {mu}m showing good crystalline quality and epitaxial growth.

  11. Effect of magnetic field on the mechanical properties of magnetostrictive iron-gallium nanowires

    SciTech Connect

    Downey, Patrick R.; Flatau, Alison B.; McGary, Patrick D.; Stadler, Bethanie J. H.

    2008-04-01

    This study experimentally investigates the elastic properties of individual iron-gallium nanowires with and without an applied magnetic bias field. The experiments were conducted with a custom manipulator stage designed for use within a scanning electron microscope, where nanowires were mechanically tested both statically and dynamically. Experiments were also performed in the presence of a 20 Oe dc magnetic field in order to identify any variation in wire properties. The results suggest that iron-gallium nanowires possess an elastic modulus very similar to the macroscale value, tensile strengths of more than double the bulk material, and minor magnetic field induced stiffening at low stresses.

  12. Patterns of gallium-67 scintigraphy in patients with acquired immunodeficiency syndrome and the AIDS related complex

    SciTech Connect

    Bitran, J.; Bekerman, C.; Weinstein, R.; Bennett, C.; Ryo, U.; Pinsky, S.

    1987-07-01

    Thirty-two patients with AIDS related complex (ARC) or acquired immunodeficiency syndrome (AIDS) underwent /sup 67/Ga scans as part of their evaluation. Three patterns of /sup 67/Ga biodistribution were found: lymph node uptake alone; diffuse pulmonary uptake; normal scan. Gallium-67 scans were useful in identifying clinically occult Pneumocystis carinii pneumonia in seven of 15 patients with ARC who were asymptomatic and had normal chest radiographs. Gallium scans are a useful ancillary procedure in the evaluation of patients with ARC or AIDS.

  13. Percolation of gallium dominates the electrical resistance of focused ion beam deposited metals

    SciTech Connect

    Faraby, H.; DiBattista, M.; Bandaru, P. R.

    2014-04-28

    Metal deposition through focused ion beam (FIB) based systems is thought to result in material composed of the primary metal from the metallo-organic precursor in addition to carbon, oxygen, and gallium. We determined, through electrical resistance and chemical composition measurements on a wide range of FIB deposited platinum and tungsten lines, that the gallium ion (Ga{sup +}) concentration in the metal lines plays the dominant role in controlling the electrical resistivity. Effective medium theory, based on McLachlan's formalisms, was used to describe the relationship between the Ga{sup +} concentration and the corresponding resistivity.

  14. Recovery of gallium and arsenic from GaAs wafer manufacturing slurries

    SciTech Connect

    Jadvar, R.; McCoy, B.J. ); Ford, B.; Galt, J. )

    1991-11-01

    Lapping and polishing slurries from the gallium arsenide (GaAs) wafer manufacturing process were used to develop simple and inexpensive methods for separation and recovery of valuable gallium and toxic arsenic. The lapping slurry, containing GaAs, glycerol, alumina, iron oxide, and water, is treated by a process involving water addition, dissolution of GaAs, mixing, sedimentation, decantation, and evaporation. The polishing slurry, containing GaAs, silica, sodium bicarbonate, sodium hypochlorite and water, is treated simply by a repetitive cycle of adding water, mixing, settling, decanting, and evaporating. After treatment, the slurries contain less than 5 ppm of dissolved arsenic and are considered non-hazardous.

  15. Wavelength dependence of light diffusion in strongly scattering macroporous gallium phosphide

    NASA Astrophysics Data System (ADS)

    Peeters, W. H.; Vellekoop, I. M.; Mosk, A. P.; Lagendijk, A.

    2008-03-01

    We present time-resolved measurements of light transport through strongly scattering macroporous gallium phosphide at various vacuum wavelengths between 705 nm and 855 nm. Within this range the transport mean free path is strongly wavelength dependent, whereas the observed energy velocity is shown to be independent of the wavelength. We conclude that microscopic resonances, which can strongly slow down the diffusion process in, e.g., granular TiO2 , are absent in macroporous gallium phosphide in the wavelength region of concern.

  16. Gallium-SPECT in the detection of prosthetic valve endocarditis and aortic ring abscess

    SciTech Connect

    O'Brien, K.; Barnes, D.; Martin, R.H.; Rae, J.R. )

    1991-09-01

    A 52-yr-old man who had a bioprosthetic aortic valve developed Staphylococcus aureus bacteremia. Despite antibiotic therapy he had persistent pyrexia and developed new conduction system disturbances. Echocardiography did not demonstrate vegetations on the valve or an abscess, but gallium scintigraphy using SPECT clearly identified a focus of intense activity in the region of the aortic valve. The presence of valvular vegetations and a septal abscess was confirmed at autopsy. Gallium scintigraphy, using SPECT, provided a useful noninvasive method for the demonstration of endocarditis and the associated valve ring abscess.

  17. Role of Oxidative Stress in the Induction of Metallothionein-2A and Heme Oxygenase-1 Gene Expression by the Antineoplastic Agent Gallium Nitrate in Human Lymphoma Cells

    PubMed Central

    Yang, Meiying; Chitambar, Christopher R.

    2008-01-01

    The mechanisms of action of gallium nitrate, an antineoplastic drug, are only partly understood. Using a DNA microarray to examine genes induced by gallium nitrate in CCRF-CEM cells, we found that gallium increased metallothionein-2A (MT2A) and heme oxygenase-1 (HO-1) gene expression and altered the levels of other stress-related genes. MT2A and HO-1 were increased after 6 and 16 h of incubation with gallium nitrate. An increase in oxidative stress, evidenced by a decrease in cellular GSH and GSH/GSSG ratio, and an increase in dichlorodihydrofluoroscein (DCF) fluorescence, was seen after 1 – 4 h incubation of cells with gallium nitrate. DCF fluorescence was blocked by the mitochondria-targeted antioxidant mitoquinone. N-acetyl-L-cysteine blocked gallium-induced MT2A and HO-1 expression and increased gallium’s cytotoxicity. Studies with a zinc-specific fluoroprobe suggested that gallium produced an expansion of an intracellular labile zinc pool, suggesting an action of gallium on zinc homeostasis. Gallium nitrate increased the phosphorylation of p38 mitogen-activated protein kinase and activated Nrf-2, a regulator of HO-1 gene transcription. Gallium-induced Nrf-2 activation and HO-1 expression were diminished by a p38 MAP kinase inhibitor. We conclude that gallium nitrate induces cellular oxidative stress as an early event which then triggers the expression of HO-1 and MT2A through different pathways. PMID:18586083

  18. Calculation of Gallium-metal-Arsenic phase diagrams

    NASA Technical Reports Server (NTRS)

    Scofield, J. D.; Davison, J. E.; Ray, A. E.; Smith, S. R.

    1991-01-01

    Electrical contacts and metallization to GaAs solar cells must survive at high temperatures for several minutes under specific mission scenarios. The determination of which metallizations or alloy systems that are able to withstand extreme thermal excursions with minimum degradation to solar cell performance can be predicted by properly calculated temperature constitution phase diagrams. A method for calculating a ternary diagram and its three constituent binary phase diagrams is briefly outlined and ternary phase diagrams for three Ga-As-X alloy systems are presented. Free energy functions of the liquid and solid phase are approximated by the regular solution theory. Phase diagrams calculated using this method are presented for the Ga-As-Ge and Ga-As-Ag systems.

  19. Millimeter wave ferromagnetic resonance in gallium-substituted ?-iron oxide

    SciTech Connect

    Chao, Liu Afsar, Mohammed N.; Ohkoshi, Shin-ichi

    2014-05-07

    In millimeter wave frequency range, hexagonal ferrites with high uniaxial anisotropic magnetic fields are used as absorbers. These ferrites include M-type barium ferrite (BaFe{sub 12}O{sub 19}) and strontium ferrite (SrFe{sub 12}O{sub 19}), which have natural ferromagnetic resonant frequency range from 40 GHz to 60?GHz. However, the higher frequency range lacks suitable materials that support the higher frequency ferromagnetic resonance. A new series of gallium-substituted ?-iron oxides (?-Ga{sub x}Fe{sub 2?x}O{sub 3}) are synthesized which have ferromagnetic resonant frequencies appearing over the frequency range 30 GHz150 GHz. The ?-Ga{sub x}Fe{sub 2?x}O{sub 3} is synthesized by the combination of reverse micelle and sol-gel techniques or the sol-gel method only. The particle sizes are observed to be smaller than 100 nm. In this paper, the free space magneto-optical approach has been employed to study these newly developed ?-Ga{sub x}Fe{sub 2?x}O{sub 3} particles in millimeter waves. This technique enables to obtain precise transmission spectra to determine the dielectric and magnetic properties of both isotropic and anisotropic ferrites in the millimeter wave frequency range from a single set of direct measurements. The transmittance and absorbance spectra of ?-Ga{sub x}Fe{sub 2?x}O{sub 3} are shown in this paper. Strong ferromagnetic resonances at different frequencies determined by the x parameter are found.

  20. Ultra-thin film nanostructured gallium arsenide solar cells

    NASA Astrophysics Data System (ADS)

    Kang, Yangsen; Chen, Yusi; Huo, Yijie; Zhao, Li; Jia, Jieyang; Deng, Huiyang; Harris, James S.

    2014-11-01

    State-of-the-art III-V cells have reached the highest energy conversion efficiency among all types of solar cells. However, these cells are not applicable to widespread terrestrial solar energy system yet due to the high cost of epitaxial growth. Ultra-thin film absorbers with advanced light management is one of the most promising solutions to drive down the cost. In this paper, we present an ultra-thin film nano-window gallium arsenide (GaAs) solar cell design. This ultrathin cell consists of a nano-structured Al0.8Ga0.2As window layer on the front side to reduce the reflection and to trap the light, and a metal reflector on the back side to further increase the light path. The 300 nm thick GaAs cell with Al0.8Ga0.2As nano-window shows a broad band absorption enhancement from visible to near infrared (NIR), achieving a spectrally averaged absorption of 94% under normal incidence. In addition, this cell shows excellent angular absorption properties, achieving over 85% spectral averaged absorption at up to 60 degree off normal incidence. Meanwhile, this structure with planar junction and nano-window has solved the issue of low fill factor and low open-circuit voltage in nano-structured GaAs solar cell. A nano-window cell with a 3 μm thick GaAs junction demonstrated an open circuit voltage of 0.9V.

  1. Synthesis and characterisation of chromium lutetium gallium garnet solid solution

    SciTech Connect

    Galindo, R.; Badenes, J.A. . E-mail: jbadenes@qio.uji.es; Llusar, M.; Tena, M.A.; Monros, G.

    2007-03-22

    The chromium lutetium gallium garnet system has been studied. Samples with 2xCaOxCr{sub 2}O{sub 3}(3 - 2x)Lu{sub 2}O{sub 3}5Ga{sub 2}O{sub 3} (x = 0.025, 0.05, 0.075, 0.1, 0.2 and 0.3,) and xCr{sub 2}O{sub 3}(3 - x)Lu{sub 2}O{sub 3}5Ga{sub 2}O{sub 3} (x = 0, 0.05, 0.075 and 0.3) compositions have been prepared in Ca,Cr:LGG and Cr:LGG systems, respectively. Samples were prepared by ceramic method, fired at 1250 deg. C/6 h and characterised by XRD, lattice parameters, UV-vis-NIR spectroscopy, CIE L * a * b * measurements and SEM/EDX. Results indicate that Ca,Cr:LGG and Cr:LGG solid solutions are obtained. In Cr:LGG system only Cr(III) is stabilised in octahedral positions substituting for Lu(III) and Ga(III). Both Cr(III) and Cr(IV) are present in Ca,Cr:LGG. The calcium is a charge compensator to stabilise Cr(IV) and this is the predominant oxidation state up to x = 0.075 composition. From this composition, Cr(III) becomes more stabilised in garnet lattice. Cr(IV) occupies generally tetrahedral and dodecahedral sites substituting for Ga(III) and Lu(III), while Cr(III) is in octahedral site substituting for Ga(III)

  2. High-speed self-timed circuits in gallium arsenide

    NASA Astrophysics Data System (ADS)

    Michell, Nicholas Albert

    Applying asynchronous methods to the design of high performance systems opens up a whole new region of design space. The goal of this dissertation is to explore some of this new space, showing the promise of asynchronous logic for creating high-speed circuits and examining some of the trade-offs that occur. The use of an asynchronous rather than a synchronous design style changes significantly the choices that can be made at several design levels. It affects the logic families used, the implementation of larger blocks such as state machines, and the high level architectural design of a system. Gallium arsenide (GaAs) is used as the implementation technology, since it currently offers speeds comparable to the best CMOS or BiCMOS processes and is available to the academic community through the MOSIS program. The combination of a self-timed design method and GaAs technology is a synergistic one; GaAs provides the raw speed while the self-timed techniques described here make that performance usable at the system level. As an example, in a synchronous system the higher performance offered by GaAs will be greatly reduced if clock skew increases as a percentage of the cycle time, and faster gates do not help much if the overall cycle time is limited by interconnect dominated paths. The local interconnects possible in most self-timed circuits allow faster gates to result in higher performance, and long wires slow down only the affected signals, rather than the entire chip. Narrowing the design space to self-timed GaAs circuits makes the subject tractable as the focus of a Ph.D. dissertation. Nevertheless it is an extremely large area to cover, and mostly virgin territory. Therefore, this dissertation tends to be more broad than deep, but specific examples and actual test circuits provide the detail that might otherwise be missing in such a wide sweep.

  3. Immunosensing platform based on gallium nanoparticle arrays on silicon substrates.

    PubMed

    García Marín, Antonio; Hernández, María Jesús; Ruiz, Eduardo; Abad, Jose María; Lorenzo, Encarnación; Piqueras, Juan; Pau, Jose Luis

    2015-12-15

    Gallium nanoparticles (GaNPs) of different sizes are deposited on Si(100) substrates by thermal evaporation. Through ellipsometric analysis, it is possible to investigate the plasmonic effects in the GaNPs and exploit them to develop biosensors. The excitation of the resonant modes for certain incidence angles leads to negative values of the imaginary part of the pseudodielectric function (<εi>) obtained in ellipsometry. Furthermore, there is an abrupt sign change when the difference between the phase shifts of p- and s-polarization components reaches 180° at an energy of around 3.15 eV. At that energy, reversal of the polarization handedness (RPH) occurs for an elliptically-polarized input beam. The energy of the RPH condition reduces as the evaporation time increases. The slope of <εi> at the RPH condition is extremely sensitive to changes in the surrounding medium of the NP surface and prompts the use of the GaNP/Si system as sensor platform. Fourier transformed infrared spectroscopy (FTIR) is used before and after functionalization with 3,3'-dithiodipropionic acid di(N-succinimidyl ester) and a glutathione-specific antibody to confirm the chemical modification of the sample surface. The developed immunosensor is exposed to different concentrations of glutathione (GSH) showing a linear relationship between the slope of the pseudodielectric function at the RPH condition and the GSH concentration. The immunosensor shows a limit of detection of 10nM enabling its use for the detection of low GSH levels in different medical conditions. PMID:26276543

  4. Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.

    2005-01-01

    Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

  5. Gallium arsenide fast photodetectors: Selection criteria and predicted response

    NASA Astrophysics Data System (ADS)

    Foulon, F.; Bergonzo, P.; Brullot, B.; Rubbelynck, C.; Flicstein, J.; Petit, P.

    2000-09-01

    The main characteristics (sensitivity, response time, dynamic range) of a photoconductive detector (PCD) depend on the intrinsic physical (lattice parameter, extended and local defects) and electrical properties (resistivity, mobility, carrier lifetime) of the material. Selection criteria for semi-insulating undoped gallium arsenide (GaAs) were thoroughly examined for their capacity to select the more suitable material for the fabrication of fast PCDs, used in gamma-ray pulse (E1.2 MeV, ?FWHM=30 ns) metrology. An analytical model, which assumes that carrier recombination takes place through EL2 type recombination centers [M. O. Manasreh and B. C. Covington, Phys. Rev. B 35, 2524 (1987)], was developed. Taking into account the initial physical and electrical properties of the GaAs material, the model accurately predicts the response of the PCDs after a neutron preirradiation step (dose range: 51014 to 11016 neutrons/cm2), which was used to optimize the PCD characteristics and in particular to reduce the response time to values lower than 100 ps. This led to the identification and validation of key parameters of the initial properties of single crystal GaAs materials influencing the PCDs final characteristics. Thus, depending on the user defined specifications, GaAs material initial properties and neutron preirradiation dose can be fixed to fabricate GaAs PCDs exhibiting the desired response time, sensitivity, and dynamic range. The study established that the PCDs characteristics are controlled only by the initial GaAs material properties when neutron preirradiation doses remain below 11015 neutrons/cm2, whereas they are mainly controlled by neutron induced crystal defects above this dose.

  6. Ductile alloy and process for preparing composite superconducting wire

    DOEpatents

    Verhoeven, John D. (Ames, IA); Finnemore, Douglas K. (Ames, IA); Gibson, Edwin D. (Ames, IA); Ostenson, Jerome E. (Ames, IA)

    1983-03-29

    An alloy for the commercial production of ductile superconducting wire is prepared by melting together copper and at least 15 weight percent niobium under non-oxygen-contaminating conditions, and rapidly cooling the melt to form a ductile composite consisting of discrete, randomly distributed and orientated dendritic-shaped particles of niobium in a copper matrix. As the wire is worked, the dendritric particles are realigned parallel to the longitudinal axis and when drawn form a plurality of very fine ductile superconductors in a ductile copper matrix. The drawn wire may be tin coated and wound into magnets or the like before diffusing the tin into the wire to react with the niobium. Impurities such as aluminum or gallium may be added to improve upper critical field characteristics.

  7. Turbine Blade Alloy

    NASA Technical Reports Server (NTRS)

    MacKay, Rebecca

    2001-01-01

    The High Speed Research Airfoil Alloy Program developed a fourth-generation alloy with up to an +85 F increase in creep rupture capability over current production airfoil alloys. Since improved strength is typically obtained when the limits of microstructural stability are exceeded slightly, it is not surprising that this alloy has a tendency to exhibit microstructural instabilities after high temperature exposures. This presentation will discuss recent results obtained on coated fourth-generation alloys for subsonic turbine blade applications under the NASA Ultra-Efficient Engine Technology (UEET) Program. Progress made in reducing microstructural instabilities in these alloys will be presented. In addition, plans will be presented for advanced alloy development and for computational modeling, which will aid future alloy development efforts.

  8. Cobalt-base alloy

    NASA Technical Reports Server (NTRS)

    Dreshfield, R. L.; Sandrock, G. D.; Freche, J. C. (Inventor)

    1973-01-01

    A microstructurally stable, high strength cobalt based alloy for use at elevated temperatures to 2125 F was developed. The alloys are particularly directed for use in stators and other low stress components in advanced gas turbines.

  9. Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Chiamori, Heather C.; Miller, Ruth; Suria, Ateeq; Broad, Nicholas; Senesky, Debbie G.

    2015-05-01

    Ultraviolet (UV) photodetectors are used for applications such as flame detection, space navigation, biomedical and environmental monitoring. Robust operation within large ranges of temperatures, radiation, salinity and/or corrosive chemicals require sensor materials with the ability to withstand and function reliably within these extreme harsh environments. For example, spacecraft can utilize a sun sensor (light-based sensor) to assist with determination of orientation and may be exposed to both ionizing radiation and extreme temperature swings during operation. Gallium nitride (GaN), a wide bandgap semiconductor material, has material properties enabling visible-blindness, tunable cutoff wavelength selection based on ternary alloy mole fraction, high current density, thermal/chemical stability and high radiation tolerance due to the strength of the chemical bond. Graphene, with outstanding electrical, optical and mechanical properties and a flat absorption spectrum from 300 to 2,500 nm, has potential use as a transparent conductor for GaN-based metal-semiconductor-metal (MSM) photodetectors. Here, graphene-enhanced MSM UV photodetectors are fabricated with transparent and conductive graphene interdigitated electrodes on thin film GaN-on-sapphire substrates serving as back-to-back Schottky contacts. We report on the irradiation response of graphene/GaN-based MSM UV photodetectors up to 750 krad total ionizing dose (TID) then tested under dark and UV light (365 nm) conditions. In addition, based on current-voltage measurements from 75 krad to 750 krad TID, calculated photodetector responsivity values change slightly by 25% and 11% at -5 V and -2 V, respectively. These initial findings suggest that graphene/GaN MSM UV photodetectors could potentially be engineered to reliably operate within radiation environments.

  10. Gallium citrate Ga 67 accumulation in pulmonary lesions after chemotherapy (MOPP)

    SciTech Connect

    Wells, J.D.; Huskison, W.T.; Davenport, O.L.

    1986-10-01

    We have described a patient with Hodgkin's disease who had fever and pulmonary infiltrates after treatment with mantle x-ray therapy and two courses of MOPP. Gallium affinity of the lung lesions proved at biopsy not to be due to Hodgkin's disease, but probably to chemotherapy-induced pulmonary toxicity.

  11. Mid-infrared spectral broadening in an ultrafast laser inscribed gallium lanthanum sulphide waveguide.

    PubMed

    McCarthy, John E; Bookey, Henry T; Psaila, Nicholas D; Thomson, Robert R; Kar, Ajoy K

    2012-01-16

    We report the successful fabrication of mid-infrared waveguides written in a gallium lanthanum sulphide (GLS) substrate via the ultrafast laser inscription technique. Single mode guiding at 2485 nm and 3850 nm is observed. Spectral broadening spanning 1500 nm (-15dB points) is demonstrated under 3850 nm excitation. PMID:22274497

  12. Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells

    NASA Astrophysics Data System (ADS)

    Laurent, T.; Nouvel, P.; Torres, J.; Chusseau, L.; Palermo, C.; Varani, L.; Cordier, Y.; Faurie, J.-P.; Beaumont, B.; Starikov, E.; Shiktorov, P.; Gruinskis, V.

    2009-11-01

    We present continuous-wave terahertz spectroscopic results obtained with a photomixing emitter and a bolometric detection. The tested elements are candidates for a further cryogenic THz experiment which will consist to demonstrate the effective amplification by optical phonon transit time resonance in gallium nitride quantum wells.

  13. Gallium arsenide integrated optical devices for high-speed diagnostic systems

    SciTech Connect

    McWright, G.; Lowry, M.; Takeuchi, E.; Murphy, G.; Tindall, W.; Koo, J.; Roeske, F.

    1987-01-01

    The design, fabrication, and evaluation of waveguide electro-optic modulators in gallium arsenide for application to high-speed diagnostic systems are discussed specifically. This paper is focused on high bandwidth, single event analog modulation, and radiation susceptibility of these devices.

  14. Bilateral Comparison of Mercury and Gallium Fixed-Point Cells Using Standard Platinum Resistance Thermometer

    NASA Astrophysics Data System (ADS)

    Bojkovski, J.; Veliki, T.; Zvizdi?, D.; Drnovek, J.

    2011-08-01

    The objective of project EURAMET 1127 (Bilateral comparison of triple point of mercury and melting point of gallium) in the field of thermometry is to compare realization of a triple point of mercury (-38.8344 C) and melting point of gallium (29.7646 C) between the Slovenian national laboratory MIRS/UL-FE/LMK and the Croatian national laboratory HMI/FSB-LPM using a long-stem 25 ? standard platinum resistance thermometer (SPRT). MIRS/UL/FE-LMK participated in a number of intercomparisons on the level of EURAMET. On the other hand, the HMI/LPM-FSB laboratory recently acquired new fixed-point cells which had to be evaluated in the process of intercomparisons. A quartz-sheathed SPRT has been selected and calibrated at HMI/LPM-FSB at the triple point of mercury, the melting point of gallium, and the water triple point. A second set of measurements was made at MIRS/UL/FE-LMK. After its return, the SPRT was again recalibrated at HMI/LPM-FSB. In the comparison, the W value of the SPRT has been used. Results of the bilateral intercomparison confirmed that the new gallium cell of the HMI/LPM-FSB has a value that is within uncertainty limits of both laboratories that participated in the exercise, while the mercury cell experienced problems. After further research, a small leakage in the mercury fixed-point cell has been found.

  15. Electro-optic modulator for infrared laser using gallium arsenide crystal

    NASA Technical Reports Server (NTRS)

    Walsh, T. E.

    1968-01-01

    Gallium arsenide electro-optic modulator used for infrared lasers has a mica quarter-wave plate and two calcite polarizers to amplitude or phase modulate an infrared laser light source in the wavelength range from 1 to 3 microns. The large single crystal has uniformly high resistivities, is strain free, and comparable in quality to good optical glass.

  16. Case report: gallium study showing a rare form of multiple myeloma

    SciTech Connect

    Meyers, E.; Kasner, J.R.

    1981-12-01

    A case study is presented in which a rare form of multiple myeloma with soft tissue involvememt was diagnosed by a gallium scan using 3 mCi of Ga-67 citrate. Subsequent resting cardiac blood pool images suggested pericardial rather than myocardial involvement. (JMT)

  17. Radiographic and radionuclide imaging in multiple myeloma: the role of gallium scintigraphy: concise communication

    SciTech Connect

    Waxman, A.D.; Siemsen, J.K.; Levine, A.M.; Holdorf, D.; Suzuki, R.; Singer, F.R.; Bateman, J.

    1981-03-01

    Eighteen patients with multiple myeloma were studied using radiographs of the skeletal system, technetium phosphate bone scans, and gallium-67 scintigraphy. A total of 94 sites were used as the basis for comparison in these 18 patients. Radiographic sensitivity on a patient basis was 94%, and was 82% on a site basis. Bone scans were positive in 78% of patients and in 46% of sites. Gallium scans were positive in 56% of patients and in 40% of sites. In five of the 18 patients, gallium scans showed activity in abnormal sites wth a greater lesion-to-nonlesion ratio than did the bone scan. In this subgroup of patients, the disease was fulminant, and all died within 3 mo of their study. The finding of high gallium uptake in osseous sites that are normal or only slightly abnormal on bone scan has served to identify a subgroup of patients with rapidly progressive disease who may benefit from alternative treatment modalities such as radiation therapy.

  18. Growth and impurity-trapping kinetics in sulfur-doped gallium arsenide epitaxy

    SciTech Connect

    Vilisova, M.D.; Lavrent'eva, L.G.; Porokhovnichenko, L.P.; Chernov, N.A.

    1988-07-01

    Measurements have been made on the effects of crystallization conditions on the growth rates and electrophysical parameters for sulfur-doped epitaxial gallium arsenide films: gas speed, supersaturation, and deposition temperature. There is a correlation between the impurity concentration and the growth rate. The results are discussed from a model that incorporates interaction between impurity atoms and matrix ones.

  19. Discordant gallium-67 and indium-111 leukocyte images in a suspected pelvic abscess

    SciTech Connect

    Intenzo, C.; Thakur, M.L.; Park, C.

    1984-11-01

    An Indium-111 labeled white blood cell scan suggested the presence of a pelvic abscess in a woman at four weeks postpartum. This was not identified on a subsequent gallium scan. This discrepancy can be attributed to the normal accumulation of white blood cells within the uterus at one month postpartum.

  20. Soliton Scattering by an Interface of Gallium Nanoparticles and Monomode Optical Fiber

    NASA Astrophysics Data System (ADS)

    Naruka, Preeti; Bissa, Shivangi; Mathur, Radha; Nagar, A. K.

    2011-07-01

    In the present paper, the propagation of a self focused channel (optical beam) at an interface separating a thin film of gallium nanoparticles and monomode optical fiber has been studied. This interface is formed by two nonlinear media and has a step like inhomogeneity. The analysis has been made by applying the perturbation theory for solitons based on the inverse scattering technique.

  1. Skylab experiment performance evaluation manual. Appendix J: Experiment M555 gallium arsenide single crystal growth (MSFC)

    NASA Technical Reports Server (NTRS)

    Byers, M. S.

    1973-01-01

    Analyses for Experiment M555, Gallium Arsenide Single Crystal Growth (MSFC), to be used for evaluating the performance of the Skylab corollary experiments under preflight, inflight, and post-flight conditions are presented. Experiment contingency plan workaround procedure and malfunction analyses are presented in order to assist in making the experiment operationally successful.

  2. Influence of various factors on the accuracy of gallium-67 imaging for occult infection

    SciTech Connect

    Maderazo, E.G.; Hickingbotham, N.B.; Woronick, C.L.; Sziklas, J.J.

    1988-05-01

    To examine whether the results and interpretation of gallium-67 citrate imaging may be adversely influenced by factors present in compromised patients, we reviewed our 1-year experience in 69 patients in intensive care units, renal transplants, and those on hemodialysis. Our results indicate that it is an inappropriate diagnostic procedure for acute pancreatitis since seven of nine had false-negative results. Using loglinear modeling and chi-square analysis we found that treatment with antiinflammatory steroids, severe liver disease, end-stage renal disease, and renal transplantation with immunosuppressive therapy did not interfere with gallium-67 uptake. Increased rate of true-negative results in patients with end-stage renal disease was due to a greater and earlier use of the test in the febrile transplant patient and in hemodialysis patients with infections not amenable to diagnosis with gallium-67 scan (transient bacteremia and bacteriuria). We conclude that gallium-67 imaging is a useful diagnostic tool that, with the exception of acute pancreatitis, has very few false-negative results.

  3. Structure and optical properties of cubic gallium oxynitride synthesized by solvothermal route

    SciTech Connect

    Oberlnder, Andreas; Kinski, Isabel; Zhu, Wenliang; Pezzotti, Giuseppe; Michaelis, Alexander

    2013-04-15

    Cubic gallium oxynitride was synthesized using a solvothermal processing route. Crystal structure, chemical composition, optical properties and the influence of heat treatment in either reactive or inert atmospheres have been investigated. Despite a strongly distorted lattice revealed using X-ray diffraction, the Raman active modes of a cubic gallium oxynitride structure could be observed. With diffusive reflectance UVVis spectroscopy a band gap at around 4.8 eV has been observed. Additionally, cathodoluminescence spectroscopy exhibited observable luminescence caused by defect-related transitions within the optical gap. Cathodoluminescence and photoluminescence spectra collected after heat treatments showed significant changes in the defect structure. In particular, for annealing in ammonia the main spectral modifications were related to the substitution of oxygen by nitrogen on anion sites. - Graphical abstract: CL spectra of gallium oxynitride: As-prepared and heat-treated at temperatures of 500 C in different atmospheres. Highlights: ? Raman spectrum of cubic gallium oxynitride. ? Experimental determination of optical band gap. ? Shift of band gap energy due to heat treatment. ? Nitrogen incorporation leads to deep level acceptor states. ? Red shifted luminescence spectrum.

  4. Uncooled pulsed cadmium sulfide and gallium arsenide lasers pumped longitudinally by an electron beam

    SciTech Connect

    Bogdankevich, O.V.; Zverev, M.M.; Kostin, N.N.; Kopyt, S.P.; Krasavina, E.M.; Kryukova, I.V.; Matveenko, E.V.; Pevtsov, V.F.; Ushakhin, V.A.; Yakushin, V.K.

    1985-07-01

    A report is given of the fabrication of multielement uncooled lasers with an output power of 17 MW per pulse in the case of cadmium sulfide and 4.5 MW in the case of gallium arsenide pumped longitudinally by an electron beam. Ways of improving the characteristics of these lasers are considered.

  5. A mobility study of the radiation induced order effect in gallium arsenide

    SciTech Connect

    Jorio, A.; Parenteau, M.; Aubin, M.; Carlone, C. . Dept. de Physique); Khanna, S.M. ); Gerdes, J.W. Jr. )

    1994-12-01

    N-type gallium arsenide doped with silicon was irradiated with reactor neutrons to 10[sup 12], 3 [times] 10[sup 12], 10[sup 13], 3 [times] 10[sup 13], 10[sup 14], 3 [times] 10[sup 14], 10[sup 15], and 3 [times] 10[sup 15] cm[sup [minus]2] (1 MeV equivalent fluence). The temperature dependence of the mobility was obtained after irradiation and annealing to 550 C for 30 minutes. The maximum value of the mobility, [mu][sub max], with respect to temperature was obtained as a function of fluence. For samples which have been irradiated and then annealed, [mu][sub max] goes through a maximum at a fluence of 10[sup 13] cm[sup [minus]2] and is 10% higher than in the unirradiated samples. At higher fluences, the mobility degrades. The authors attribute the increase in mobility at lower fluences to a radiation induced order effect. The disappearance of the deep level EL12 could be associated with this effect. At higher fluences where the mobility degrades, they observe by photoluminescence spectroscopy, the gallium vacancy, a point defect introduced by the irradiation, and the transfer of the silicon atom from the gallium site to the arsenic site. This suggests that growth of the gallium vacancy or the silicon at the arsenic site can be associated with mobility degradation.

  6. Three cases demonstrating the role of gallium scanning in relapsing Hodgkin's disease and non-Hodgkin lymphoma

    SciTech Connect

    Zollars, L.E.; Nagel, J.S.; Tumeh, S.S.

    1987-10-01

    Restaging of Hodgkin's disease and non-Hodgkin lymphoma for chemotherapy traditionally requires chest radiograph and abdominal computerized tomogram (CT) for routine follow-up examination. Although gallium scanning has had a poor record in the past, recent studies suggest that improved techniques have given this method high sensitivity. We present three cases in which gallium correctly staged lymphoma that had been missed or misinterpreted by chest radiographs and abdominal CT. Gallium imaging is useful in follow-up of lymphoma patients especially when the CT scan is difficult to interpret.

  7. SUPERCONDUCTING VANADIUM BASE ALLOY

    DOEpatents

    Cleary, H.J.

    1958-10-21

    A new vanadium-base alloy which possesses remarkable superconducting properties is presented. The alloy consists of approximately one atomic percent of palladium, the balance being vanadium. The alloy is stated to be useful in a cryotron in digital computer circuits.

  8. DELTA PHASE PLUTONIUM ALLOYS

    DOEpatents

    Cramer, E.M.; Ellinger, F.H.; Land. C.C.

    1960-03-22

    Delta-phase plutonium alloys were developed suitable for use as reactor fuels. The alloys consist of from 1 to 4 at.% zinc and the balance plutonium. The alloys have good neutronic, corrosion, and fabrication characteristics snd possess good dimensional characteristics throughout an operating temperature range from 300 to 490 deg C.

  9. Spin-phonon coupling and ferroelectricity in magnetoelectric gallium ferrite

    NASA Astrophysics Data System (ADS)

    Mukherjee, Somdutta

    2014-03-01

    Gallium ferrite (GaFeO3 or GFO) is a low temperature ferrimagnet and room temperature piezoelectric wherein the magnetic transition temperature (TC) could be tailored to room temperature and above by tuning the stoichiometry and processing conditions. Such tunability of the magnetic transition temperature renders GFO a unique perspective in the research of multiferroics to potentially demonstrate room temperature magnetoelectric effect attractive for futuristic digital memory applications. Recent studies in several transition metal oxides highlight the importance of spin-phonon coupling in designing novel multiferroics by means of strain induced phase transition. In the present work, we have systematically studied the evolution of phonons in good quality samples of GFO across the TC using Raman spectroscopy. Using the phonon softening behavior and nearest neighbor spin-spin correlation function below TC we estimated spin-phonon coupling strength in the magnetically ordered state. In the process, we also show, for the first time, the presence of a spin glass phase in GFO where the spin-glass transition has a signature of abrupt change in spin-phonon coupling strength. Though GFO is piezoelectric and crystallizes in polar Pc21n symmetry, its ferroelectric nature remained controversial probably due to the large leakage current in the bulk material. To address this issue, we deposited epitaxial thin film on single crystalline yttria stabilized zirconia (YSZ) substrate using indium tin oxide (ITO) as a bottom conducting layer. We demonstrate clear evidence of room temperature ferroelectricity in the thin films from the 180o phase shift of the piezoresponse upon switching the electric field. Further, suppression of dielectric anomaly in presence of an external magnetic field clearly reveals a pronounced magneto-dielectric coupling across the magnetic transition temperature. In addition, using first principles calculations we elucidate that Fe ions are not only responsible for ferrimagnetism as observed earlier, but give rise to the observed ferroelectricity also, making GFO an unique single phase multiferroic. I thank to my collaborators (Somdutta Mukherjee, Amritendu Roy, Sushil Auluck, Rajendra Prasad, Rajeev Gupta,and Ashish Garg) for their contributions in the present work. This work was partially funded by DST, India.

  10. As-Grown Gallium Nitride Nanowire Electromechanical Resonators

    NASA Astrophysics Data System (ADS)

    Montague, Joshua R.

    Technological development in recent years has led to a ubiquity of micro- and nano-scale electromechanical devices. Sensors for monitoring temperature, pressure, mass, etc., are now found in nearly all electronic devices at both the industrial and consumer levels. As has been true for integrated circuit electronics, these electromechanical devices have continued to be scaled down in size. For many nanometer-scale structures with large surface-to-volume ratio, dissipation (energy loss) becomes prohibitively large causing a decreasing sensitivity with decreasing sensor size. In this work, gallium nitride (GaN) nanowires are investigated as singly-clamped (cantilever) mechanical resonators with typical mechanical quality factors, Q (equal to the ratio of resonance frequency to peak full-width-at-half-maximum-power) and resonance frequencies, respectively, at or above 30,000, and near 1 MHz. These Q values---in vacuum at room temperature---indicate very low levels of dissipation; they are essentially the same as those for bulk quartz crystal resonators that form the basis of simple clocks and mass sensors. The GaN nanowires have lengths and diameters, respectively, of approximately 15 micrometers and hundreds of nanometers. As-grown GaN nanowire Q values are larger than other similarly-sized, bottom-up, cantilever resonators and this property makes them very attractive for use as resonant sensors. We demonstrate the capability of detecting sub-monolayer levels of atomic layer deposited (ALD) films, and the robust nature of the GaN nanowires structure that allows for their 'reuse' after removal of such layers. In addition to electron microscope-based measurement techniques, we demonstrate the successful capacitive detection of a single nanowire using microwave homodyne reflectometry. This technique is then extended to allow for simultaneous measurements of large ensembles of GaN nanowires on a single sample, providing statistical information about the distribution of individual nanowire properties. We observe nanowire-to-nanowire variations in the temperature dependence of GaN nanowire resonance frequency and in the observed mechanical dissipation. We also use this ensemble measurement technique to demonstrate unique, very low-loss resonance behavior at low temperatures. The low dissipation (and corresponding large Q values) observed in as-grown GaN nanowires also provides a unique opportunity for studying fundamental energy loss mechanisms in nano-scale objects. With estimated mass sensitivities on the level of zeptograms (10-21 g) in a one second averaging time, GaN nanowires may be a significant addition to the field of resonant sensors and worthy of future research and device integration.

  11. 3D structures of liquid-phase GaIn alloy embedded in PDMS with freeze casting.

    PubMed

    Fassler, Andrew; Majidi, Carmel

    2013-11-21

    Liquid phase electronic circuits are created by freeze casting gallium-indium (GaIn) alloys, such as eutectic gallium-indium (EGaIn), and encapsulating these frozen components within an elastomer. These metal alloys are liquid at room temperature, and can be cast using either injection or a vacuum to fill a PDMS mold and placing the mold in a freezer. Once solidified, a GaIn alloy segment can be manipulated, altered, or bonded to other circuit elements. A stretchable circuit can be fabricated by placing frozen components onto an elastomer substrate, which can be either patterned or flat, and sealing with an additional layer of elastomer. Circuits produced in this fashion are soft, stretchable, and can have complex 3D channel geometries. In contrast, current fabrication techniques, including needle injection, mask deposition, and microcontact printing, are limited to 2D planar designs. Additionally, freeze casting fabrication can create closed loops, multi-terminal circuits with branching features, and large area geometries. PMID:24067934

  12. High strength alloys

    SciTech Connect

    Maziasz, Phillip James; Shingledecker, John Paul; Santella, Michael Leonard; Schneibel, Joachim Hugo; Sikka, Vinod Kumar; Vinegar, Harold J; John, Randy Carl; Kim, Dong Sub

    2010-08-31

    High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tubular that is at least partially made from a material containing at least one of the metal alloys.

  13. High strength alloys

    SciTech Connect

    Maziasz, Phillip James; Shingledecker, John Paul; Santella, Michael Leonard; Schneibel, Joachim Hugo; Sikka, Vinod Kumar; Vinegar, Harold J.; John, Randy Carl; Kim, Dong Sub

    2012-06-05

    High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tublar that is at least partially made from a material containing at least one of the metal alloys.

  14. Spark alloying of an AL9 alloy by hard alloys

    NASA Astrophysics Data System (ADS)

    Kuptsov, S. G.; Fominykh, M. V.; Mukhinov, D. V.; Magomedova, R. S.; Nikonenko, E. A.

    2015-08-01

    The phase compositions of spark coatings of Kh12M steel with a VT1-0 (titanium) alloy and T15K6 and T30K4 hard alloys are studied. It is shown that the TiC titanium carbide forms in all cases and tungsten carbide decomposes with the formation of tungsten in a coating. These processes are intensified by increasing time, capacitance, and frequency. The surface hardness, the sample weight, and the white layer thickness increase monotonically.

  15. Single-Crystal NiAl-X Alloys Tested for Hot Corrosion

    NASA Technical Reports Server (NTRS)

    Nesbitt, James A.

    1999-01-01

    Single-crystal nickel aluminide (NiAl) has been investigated extensively throughout the last several years as a potential structural material in aero-gas turbine engines. The attractive features of NiAl in comparison to Ni-base superalloys include a higher melting point, lower density, higher thermal conductivity, and excellent oxidation resistance. However, NiAl suffers from a lack of ductility and fracture toughness at low temperatures and a low creep strength at high temperatures. Alloying additions of hafnium (Hf), gallium (Ga), titanium (Ti), and chromium (Cr) have each shown some benefit to the mechanical properties over that of the binary alloy. However, the collective effect of these alloying additions on the environmental resistance of NiAl-X was unclear. Hence, the present study was undertaken to examine the hot corrosion behavior of these alloys. A companion study examined the cyclic oxidation resistance of these alloys. Several single-crystal NiAl-X alloys (where X is Hf, Ti, Cr, or Ga) underwent hot corrosion testing in a Mach 0.3 burner rig at the NASA Lewis Research Center. Samples were tested for up to 300 1-hr cycles at a temperature of 900 C. It was found that increasing the Ti content from 1 to 5 at.% degraded the hot corrosion behavior. This decline in the behavior was reflected in high weight gains and large corrosion mound formation during testing (see the figures). However, the addition of 1 to 2 at.% Cr to alloys containing 4 to 5 at.% Ti appeared to greatly reduce the susceptibility of these alloys to hot corrosion attack and negated the deleterious effect of the increased Ti addition.

  16. Creep Resistant Zinc Alloy

    SciTech Connect

    Frank E. Goodwin

    2002-12-31

    This report covers the development of Hot Chamber Die Castable Zinc Alloys with High Creep Strengths. This project commenced in 2000, with the primary objective of developing a hot chamber zinc die-casting alloy, capable of satisfactory service at 140 C. The core objectives of the development program were to: (1) fill in missing alloy data areas and develop a more complete empirical model of the influence of alloy composition on creep strength and other selected properties, and (2) based on the results from this model, examine promising alloy composition areas, for further development and for meeting the property combination targets, with the view to designing an optimized alloy composition. The target properties identified by ILZRO for an improved creep resistant zinc die-casting alloy were identified as follows: (1) temperature capability of 1470 C; (2) creep stress of 31 MPa (4500 psi); (3) exposure time of 1000 hours; and (4) maximum creep elongation under these conditions of 1%. The project was broadly divided into three tasks: (1) Task 1--General and Modeling, covering Experimental design of a first batch of alloys, alloy preparation and characterization. (2) Task 2--Refinement and Optimization, covering Experimental design of a second batch of alloys. (3) Task 3--Creep Testing and Technology transfer, covering the finalization of testing and the transfer of technology to the Zinc industry should have at least one improved alloy result from this work.

  17. Weldability of High Alloys

    SciTech Connect

    Maroef, I

    2003-01-22

    The purpose of this study was to investigate the effect of silicon and iron on the weldability of HAYNES HR-160{reg_sign} alloy. HR-I60 alloy is a solid solution strengthened Ni-Co-Cr-Si alloy. The alloy is designed to resist corrosion in sulfidizing and other aggressive high temperature environments. Silicon is added ({approx}2.75%) to promote the formation of a protective oxide scale in environments with low oxygen activity. HR-160 alloy has found applications in waste incinerators, calciners, pulp and paper recovery boilers, coal gasification systems, and fluidized bed combustion systems. HR-160 alloy has been successfully used in a wide range of welded applications. However, the alloy can be susceptible to solidification cracking under conditions of severe restraint. A previous study by DuPont, et al. [1] showed that silicon promoted solidification cracking in the commercial alloy. In earlier work conducted at Haynes, and also from published work by DuPont et al., it was recognized that silicon segregates to the terminal liquid, creating low melting point liquid films on solidification grain boundaries. Solidification cracking has been encountered when using the alloy as a weld overlay on steel, and when joining HR-160 plate in a thickness greater than19 millimeters (0.75 inches) with matching filler metal. The effect of silicon on the weldability of HR-160 alloy has been well documented, but the effect of iron is not well understood. Prior experience at Haynes has indicated that iron may be detrimental to the solidification cracking resistance of the alloy. Iron does not segregate to the terminal solidification product in nickel-base alloys, as does silicon [2], but iron may have an indirect or interactive influence on weldability. A set of alloys covering a range of silicon and iron contents was prepared and characterized to better understand the welding metallurgy of HR-160 alloy.

  18. Lymphocytic interstitial pneumonitis: a cause of pulmonary gallium-67 uptake in a child with acquired immunodeficiency syndrome

    SciTech Connect

    Zuckier, L.S.; Ongseng, F.; Goldfarb, C.R.

    1988-05-01

    Lymphocytic interstitial pneumonitis (LIP) is currently recognized as a frequent pediatric manifestation of the acquired immunodeficiency syndrome (AIDS). We report the gallium scan findings in a 3-yr-old girl with this disorder and review its clinical, radiologic, and pathologic features. LIP must be a prime consideration in the differential diagnosis of diffuse pulmonary gallium uptake in pediatric AIDS patients. Further experience will afford greater perspective on the diagnostic role that nuclear medicine will ultimately play in this disease. 49 references.

  19. The 13.9 GHz short pulse radar noise figure measurements utilizing silicon and gallium-arsenide mixer diodes

    NASA Technical Reports Server (NTRS)

    Dombrowski, M.

    1977-01-01

    An analysis was made on two commercially available silicon and gallium arsenide Schottky barrier diodes. These diodes were selected because of their particularly low noise figure in the frequency range of interest. The specified noise figure for the silicon and gallium arsenide diodes were 6.3 db and 5.3 db respectively when functioning as mixers in the 13.6 GHz region with optimum local oscillator drive.

  20. Alloying of aluminum-beryllium alloys

    NASA Astrophysics Data System (ADS)

    Molchanova, L. V.; Ilyushin, V. N.

    2013-01-01

    The existing phase diagrams of Al-Be- X alloys, where X is an alloying element, are analyzed. Element X is noted to poorly dissolve in both aluminum and beryllium. It is shown that the absence of intermetallic compounds in the Al-Be system affects the phase equilibria in an Al-Be- X system. Possible phase equilibria involving phases based on aluminum, beryllium, and intermetallic compounds are proposed, and the types of strengthening of Al-Be alloys by an addition of a third element are classified.