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Sample records for gallium alloys

  1. Thermodynamic properties of uranium in gallium-aluminium based alloys

    NASA Astrophysics Data System (ADS)

    Volkovich, V. A.; Maltsev, D. S.; Yamshchikov, L. F.; Chukin, A. V.; Smolenski, V. V.; Novoselova, A. V.; Osipenko, A. G.

    2015-10-01

    Activity, activity coefficients and solubility of uranium was determined in gallium-aluminium alloys containing 1.6 (eutectic), 5 and 20 wt.% aluminium. Additionally, activity of uranium was determined in aluminium and Ga-Al alloys containing 0.014-20 wt.% Al. Experiments were performed up to 1073 K. Intermetallic compounds formed in the alloys were characterized by X-ray diffraction. Partial and excess thermodynamic functions of U in the studied alloys were calculated.

  2. Thermodynamic properties of uranium in gallium-aluminium based alloys

    NASA Astrophysics Data System (ADS)

    Volkovich, V. A.; Maltsev, D. S.; Yamshchikov, L. F.; Chukin, A. V.; Smolenski, V. V.; Novoselova, A. V.; Osipenko, A. G.

    2015-10-01

    Activity, activity coefficients and solubility of uranium was determined in gallium-aluminium alloys containing 1.6 (eutectic), 5 and 20 wt.% aluminium. Additionally, activity of uranium was determined in aluminium and Ga-Al alloys containing 0.014-20 wt.% Al. Experiments were performed up to 1073 K. Intermetallic compounds formed in the alloys were characterized by X-ray diffraction. Partial and excess thermodynamic functions of U in the studied alloys were calculated.

  3. Mechanical retention versus bonding of amalgam and gallium alloy restorations.

    PubMed

    Eakle, W S; Staninec, M; Yip, R L; Chavez, M A

    1994-10-01

    The retention of amalgam and gallium alloy restorations in proximal box forms was measured in vitro, and three different adhesives to conventional undercuts were compared. For control, restorations were placed without undercuts or adhesives. No significant difference was found between amalgam and gallium alloys with each of the five methods of retention used. Alloys placed without retention or adhesives were significantly less retentive than all other groups. When Tytin alloy was used, no difference was found in retention among the restorations retained with Panavia or All-Bond adhesive or an occlusal dovetail and retention grooves, but Amalgambond adhesive was less retentive than all three of these methods. When gallium alloy was used, both Panavia and All-Bond adhesive were more retentive than undercuts, but the effect of Amalgambond adhesive was more retentive than undercuts, but the effect of Amalgambond adhesive was comparable to that of undercuts. The results of this study indicate that adhesives could be used in place of traditional undercuts to retain amalgam and gallium alloys, thus saving a considerable amount of tooth structure. PMID:7990038

  4. Aluminum additions in polycrystalline iron-gallium (Galfenol) alloys

    NASA Astrophysics Data System (ADS)

    Brooks, M. D.; Summers, E.; Meloy, R.; Mosley, J.

    2008-03-01

    Galfenol alloys show promise as a new magnetically activated smart material based on their unique combination of relatively high magnetostrictive performance and good mechanical robustness. Investigations of aluminum additions to single crystal iron-gallium alloys have been done previously, and the magnetostrictive response seems to follow the rule of mixtures with decreasing saturation magnetostriction with increasing aluminum content. Aluminum is assumed to substitute for Ga directly in the alloy. Directionally solidified polycrystalline Galfenol alloys with aluminum additions were produced to determine the effects on the magnetic properties. Iron-gallium-aluminum alloys were investigated for two primary reasons: (1) Fe-Al alloys are well established and are typically manufactured using conventional thermo-mechanical processing techniques such as rolling; it is anticipated that aluminum additions will aid in the development of Galfenol alloy rolled sheets (2) Gallium prices continue to rise and a cost effective alternative needs to be investigated. Several Fe-Ga-Al alloy compositions were prepared using the Free Stand Zone Melting (FSZM) directional solidification technique. Alloy composition ranges investigated include: Fe 80.5Ga xAl 19.5-x (4.9<=x<=13), Fe 81.6Ga yAl 18.4-y (4.6<=y<=13.8), and Fe 85Ga zAl 15-z (3.75<=z<=11.25). Alloys were studied using EDS (chemistry verification), EBSD (crystallite orientation), and magnetic characterization techniques to determine the effect of aluminum addition on the polycrystalline binary Fe-Ga system. Magnetic properties such as saturation magnetostriction (λ sat), piezomagnetic constant (d 33), and relative magnetic permeability (μ r) of directionally solidified Fe-Ga-Al polycrystalline alloys will be compared to binary Fe-Ga alloys including investigations into the crystal orientation effects on these properties. Results suggest that up to 50% aluminum can be substituted in the alloy while maintaining considerable

  5. Gallium

    SciTech Connect

    1996-01-01

    Discovered in 1875 through a study of its spectral properties, gallium was the first element to be uncovered following the publication of Mendeleev`s Periodic Table. French chemist, P.E. Lecoq de Boisbaudran, named his element discovery in honor of his native country; gallium is derived from the Latin word for France-{open_quotes}Gallia.{close_quotes}. This paper describes the properties, sources, and market for gallium.

  6. A study of the apical microleakage of a gallium alloy as a retrograde filling material.

    PubMed

    Hosoya, N; Lautenschlager, E P; Greener, E H

    1995-09-01

    The feasibility of utilizing mercury-free Gallium alloy GF for retrograde filling was investigated by comparing apical microleakage in 184 extracted human teeth. The teeth were divided into four experimental and two control groups. Three experimental groups were apical cavity retrofillings with the Gallium alloy GF, a mercury-containing amalgam, and a glass ionomer. The fourth experimental group was filled with gutta-percha and heat-burnished after apicoectomy. After 24 h, 1 wk, 4 wk, and 12 wk immersion in dye solution, the roots were vertically sectioned, and the deepest point of dye penetration was recorded. The glass ionomer showed the least leakage, followed by the amalgam group and the gallium group (no significant difference). The gutta-percha heat-burnished group displayed the greatest leakage. Gallium alloy GF was shown to have an equivalent sealing potential to dental amalgam for a retrograde filling material. PMID:8537788

  7. Thermodynamic properties of uranium in liquid gallium, indium and their alloys

    NASA Astrophysics Data System (ADS)

    Volkovich, V. A.; Maltsev, D. S.; Yamshchikov, L. F.; Osipenko, A. G.

    2015-09-01

    Activity, activity coefficients and solubility of uranium was determined in gallium, indium and gallium-indium alloys containing 21.8 (eutectic), 40 and 70 wt.% In. Activity was measured at 573-1073 K employing the electromotive force method, and solubility between room temperature (or the alloy melting point) and 1073 K employing direct physical measurements. Activity coefficients were obtained from the difference of experimentally determined temperature dependencies of uranium activity and solubility. Intermetallic compounds formed in the respective alloys were characterized using X-ray diffraction. Partial and excess thermodynamic functions of uranium in the studied alloys were calculated. Liquidus lines in U-Ga and U-In phase diagrams from the side rich in gallium or indium are proposed.

  8. Sputtering of the gallium-indium eutectic alloy in the liquid phase

    NASA Technical Reports Server (NTRS)

    Dumke, M. F.; Tombrello, T. A.; Weller, R. A.; Housley, R. M.; Cirlin, E. H.

    1983-01-01

    Watson and Haff (1980) have discussed a theory which is designed to explain quantitatively isotopic fractionation effects observed during sputtering of simple or complex targets. This theory is based on the assumption that most of the atoms sputtered from a surface originate in the top monolayer. The present investigation is mainly concerned with a direct experimental test of that assumption. The sputtering of both solid and liquid phases of gallium, indium, and the gallium-indium eutectic alloy is studied. Results obtained with the aid of ion scattering and Auger spectroscopy show that, in agreement with rough theoretical expectations, the surface monolayer of a gallium-indium alloy with 16.5 percent indium in bulk contains more than 94 percent indium, while the next layer can be only slightly enriched.

  9. Development of highly magnetostrictive iron-gallium and iron-gallium-aluminum alloys

    NASA Astrophysics Data System (ADS)

    Srisukhumbowornchai, Nakorn

    2001-10-01

    Magnetostrictive materials that exhibit high mechanical strength, good ductility, large magnetostriction at low saturation fields under both no-load and high-imposed loading conditions, and low cost are of great interest for use in numerous magnetomechanical sensors and actuators. The main purposes of this research are to (i)identify such alloys based on Fe and relatively inexpensive alloying elements, (ii)develop low cost processing of these alloys using directional solidification and thermomechanical processing, and (iii)develop an understanding of how alloying elements and crystal structures influence magnetostriction in Fe. This work for the first time shows that BCC Fe-Ga based alloys show large low field magnetostriction. The magnetostriction values increase as Ga content increases and a preferred [001] crystallographic texture is approached. The values as high as 271 × 10-6 are obtained in the polycrystalline Fe-27.5 at.% Ga rod directionally grown at the rate of 22.5 mm/hour. These large values are obtained at very low applied fields (as low as 65 Oe) and with very small hysteresis. Alloys investigated here include Fe-x at.% Ga (x = 15, 20 and 27.5), Fe-y at.% Ga- (20-y) at.% Al (y = 0, 5, 10 and 15), Fe-13.75 at.% Ga- 13.75 at.% Al, Fe-15 at.% Al, Fe-15 at.% Al-4 at.% Co, Fe-15 at.% Ga-4 at.% Co, Fe-15 at.% Mo, Fe-20 at.% Re, Fe-20 at.% Rh and Fe-10 at.% Sn. A directional casting process involving solidification by rapid one-dimensional heat extraction produced rods with a weak [110] preferred orientation resulting in low magnetostriction. A directional growth process involving controlled crucible movement in a furnace down the temperature gradient resulted in rods with a preferred orientation approaching [001] direction and a large magnetostriction. Orientation imaging microscopy study of texture evolution showed that a low-cost thermomechanical processing sequence of hot rolling, two-stage warm rolling reduction of about 60-65% with 900°C intermediate

  10. Fabrication methods and applications of microstructured gallium based liquid metal alloys

    NASA Astrophysics Data System (ADS)

    Khondoker, M. A. H.; Sameoto, D.

    2016-09-01

    This review contains a comparative study of reported fabrication techniques of gallium based liquid metal alloys embedded in elastomers such as polydimethylsiloxane or other rubbers as well as the primary challenges associated with their use. The eutectic gallium–indium binary alloy (EGaIn) and gallium–indium–tin ternary alloy (galinstan) are the most common non-toxic liquid metals in use today. Due to their deformability, non-toxicity and superior electrical conductivity, these alloys have become very popular among researchers for flexible and reconfigurable electronics applications. All the available manufacturing techniques have been grouped into four major classes. Among them, casting by needle injection is the most widely used technique as it is capable of producing features as small as 150 nm width by high-pressure infiltration. One particular fabrication challenge with gallium based liquid metals is that an oxide skin is rapidly formed on the entire exposed surface. This oxide skin increases wettability on many surfaces, which is excellent for keeping patterned metal in position, but is a drawback in applications like reconfigurable circuits, where the position of liquid metal needs to be altered and controlled accurately. The major challenges involved in many applications of liquid metal alloys have also been discussed thoroughly in this article.

  11. Controlling Surface Chemistry of Gallium Liquid Metal Alloys to Enhance their Fluidic Properties

    NASA Astrophysics Data System (ADS)

    Ilyas, Nahid; Cumby, Brad; Cook, Alexander; Durstock, Michael; Tabor, Christopher; Materials; Manufacturing Directorate Team

    Gallium liquid metal alloys (GaLMAs) are one of the key components of emerging technologies in reconfigurable electronics, such as tunable radio frequency antennas and electronic switches. Reversible flow of GaLMA in microchannels of these types of devices is hindered by the instantaneous formation of its oxide skin in ambient environment. The oxide film sticks to most surfaces leaving unwanted metallic residues that can cause undesired electronic properties. In this report, residue-free reversible flow of a binary alloy of gallium (eutectic gallium indium) is demonstrated via two types of surface modifications where the oxide film is either protected by an organic thin film or chemically removed. An interface modification layer (alkyl phosphonic acids) was introduced into the microfluidic system to modify the liquid metal surface and protect its oxide layer. Alternatively, an ion exchange membrane was utilized as a 'sponge-like' channel material to store and slowly release small amounts of HCl to react with the surface oxide of the liquid metal. Characterization of these interfaces at molecular level by surface spectroscopy and microscopy provided with mechanistic details for the interfacial interactions between the liquid metal surface and the channel materials.

  12. Frequency-Switchable Metamaterial Absorber Injecting Eutectic Gallium-Indium (EGaIn) Liquid Metal Alloy.

    PubMed

    Ling, Kenyu; Kim, Hyung Ki; Yoo, Minyeong; Lim, Sungjoon

    2015-01-01

    In this study, we demonstrated a new class of frequency-switchable metamaterial absorber in the X-band. Eutectic gallium-indium (EGaIn), a liquid metal alloy, was injected in a microfluidic channel engraved on polymethyl methacrylate (PMMA) to achieve frequency switching. Numerical simulation and experimental results are presented for two cases: when the microfluidic channels are empty, and when they are filled with liquid metal. To evaluate the performance of the fabricated absorber prototype, it is tested with a rectangular waveguide. The resonant frequency was successfully switched from 10.96 GHz to 10.61 GHz after injecting liquid metal while maintaining absorptivity higher than 98%. PMID:26561815

  13. Frequency-Switchable Metamaterial Absorber Injecting Eutectic Gallium-Indium (EGaIn) Liquid Metal Alloy

    PubMed Central

    Ling, Kenyu; Kim, Hyung Ki; Yoo, Minyeong; Lim, Sungjoon

    2015-01-01

    In this study, we demonstrated a new class of frequency-switchable metamaterial absorber in the X-band. Eutectic gallium-indium (EGaIn), a liquid metal alloy, was injected in a microfluidic channel engraved on polymethyl methacrylate (PMMA) to achieve frequency switching. Numerical simulation and experimental results are presented for two cases: when the microfluidic channels are empty, and when they are filled with liquid metal. To evaluate the performance of the fabricated absorber prototype, it is tested with a rectangular waveguide. The resonant frequency was successfully switched from 10.96 GHz to 10.61 GHz after injecting liquid metal while maintaining absorptivity higher than 98%. PMID:26561815

  14. Cerium, gallium and zinc containing mesoporous bioactive glass coating deposited on titanium alloy

    NASA Astrophysics Data System (ADS)

    Shruti, S.; Andreatta, F.; Furlani, E.; Marin, E.; Maschio, S.; Fedrizzi, L.

    2016-08-01

    Surface modification is one of the methods for improving the performance of medical implants in biological environment. In this study, cerium, gallium and zinc substituted 80%SiO2-15%CaO-5%P2O5 mesoporous bioactive glass (MBG) in combination with polycaprolactone (PCL) were coated over Ti6Al4 V substrates by dip-coating method in order to obtain an inorganic-organic hybrid coating (MBG-PCL). Structural characterization was performed using XRD, nitrogen adsorption, SEM-EDXS, FTIR. The MBG-PCL coating uniformly covered the substrate with the thickness found to be more than 1 μm. Glass and polymer phases were detected in the coating along with the presence of biologically potent elements cerium, gallium and zinc. In addition, in vitro bioactivity was investigated by soaking the coated samples in simulated body fluid (SBF) for up to 30 days at 37 °C. The apatite-like layer was monitored by FTIR, SEM-EDXS and ICP measurements and it formed in all the samples within 15 days except zinc samples. In this way, an attempt was made to develop a new biomaterial with improved in vitro bioactive response due to bioactive glass coating and good mechanical strength of Ti6Al4 V alloy along with inherent biological properties of cerium, gallium and zinc.

  15. Czochralski growth of gallium indium antimonide alloy crystals

    SciTech Connect

    Tsaur, S.C.

    1998-02-01

    Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochralski process. A transparent furnace was used, with hydrogen purging through the chamber during crystal growth. Single crystal seeds up to about 2 to 5 mole% InSb were grown from seeds of 1 to 2 mole% InSb, which were grown from essentially pure GaSb seeds of the [111] direction. Single crystals were grown with InSb rising from about 2 to 6 mole% at the seed ends to about 14 to 23 mole% InSb at the finish ends. A floating-crucible technique that had been effective in reducing segregation in doped crystals, was used to reduce segregation in Czochralski growth of alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb. Crystals close to the targeted composition of 1 mole% InSb were grown. However, difficulties were encountered in reaching higher targeted InSb concentrations. Crystals about 2 mole% were grown when 4 mole% was targeted. It was observed that mixing occurred between the melts rendering the compositions of the melts; and, hence, the resultant crystal unpredictable. The higher density of the growth melt than that of the replenishing melt could have triggered thermosolutal convection to cause such mixing. It was also observed that the floating crucible stuck to the outer crucible when the liquidus temperature of the replenishing melt was significantly higher than that of the growth melt. The homogeneous Ga{sub 1{minus}x}In{sub x}Sb single crystals were grown successfully by a pressure-differential technique. By separating a quartz tube into an upper chamber for crystal growth and a lower chamber for replenishing. The melts were connected by a capillary tube to suppress mixing between them. A constant pressure differential was maintained between the chambers to keep the growth melt up in the growth chamber. The method was first tested with a low temperature alloy Bi{sub 1{minus}x}Sb{sub x}. Single crystals of Ga{sub 1{minus}x}In{sub x}Sb were grown with uniform

  16. The microstructural, mechanical, and fracture properties of austenitic stainless steel alloyed with gallium

    NASA Astrophysics Data System (ADS)

    Kolman, D. G.; Bingert, J. F.; Field, R. D.

    2004-11-01

    The mechanical and fracture properties of austenitic stainless steels (SSs) alloyed with gallium require assessment in order to determine the likelihood of premature storage-container failure following Ga uptake. AISI 304 L SS was cast with 1, 3, 6, 9, and 12 wt pct Ga. Increased Ga concentration promoted duplex microstructure formation with the ferritic phase having a nearly identical composition to the austenitic phase. Room-temperature tests indicated that small additions of Ga (less than 3 wt pct) were beneficial to the mechanical behavior of 304 L SS but that 12 wt pct Ga resulted in a 95 pct loss in ductility. Small additions of Ga are beneficial to the cracking resistance of stainless steel. Elastic-plastic fracture mechanics analysis indicated that 3 wt pct Ga alloys showed the greatest resistance to crack initiation and propagation as measured by fatigue crack growth rate, fracture toughness, and tearing modulus. The 12 wt pct Ga alloys were least resistant to crack initiation and propagation and these alloys primarily failed by transgranular cleavage. It is hypothesized that Ga metal embrittlement is partially responsible for increased embrittlement.

  17. Atomistic model of helium bubbles in gallium-stabilized plutonium alloys

    SciTech Connect

    Valone, S. M.; Baskes, M. I.; Martin, R. L.

    2006-06-01

    The varying thermodynamic stability of gallium- (Ga-) stabilized plutonium (Pu) alloys with temperature affords a unique setting for the development of self-irradiation damage. Here, fundamental characteristics of helium (He) bubbles in these alloys with respect to temperature, gallium concentration, and He-to-vacancy ratio are modeled at the atomistic level with a modified embedded atom potential that takes account of this varying stability. Aside from the bubbles themselves, the surrounding matrix material is single-crystal metal or alloy. As a function of temperature, with a 2:1 He-to-vacancy ratio in a 5-at. % Ga fcc lattice, a 1.25-nm bubble is very stable up to about 1000 K. At 1000 K, the bubble distorts the surrounding lattice and precipitates a liquid zone, as is consistent with the phase diagram for the model material. Between 300 and 500 K, this same bubble relaxes slightly through interstitial emission. At 300 K, with a 2:1 He-to-vacancy ratio in a 2.5-at. % Ga fcc lattice, the Ga stabilization is less effective in the model to the point where the bubble distorts the local lattice and expands significantly. Similarly, at 300 K, if the He-to-vacancy ratio is increased to 3:1, there is significant local lattice distortion, as well as ejection of some He atoms into the lattice. The formation of new bubbles is not observed, because those events take place on a longer time scale than can be simulated with the present approach.

  18. Effect of microtextured surface topography on the wetting behavior of eutectic gallium-indium alloys.

    PubMed

    Kramer, Rebecca K; Boley, J William; Stone, Howard A; Weaver, James C; Wood, Robert J

    2014-01-21

    Liquid-embedded elastomer electronics have recently attracted much attention as key elements of highly deformable and "soft" electromechanical systems. Many of these fluid-elastomer composites utilize liquid metal alloys because of their high conductivities and inherent compliance. Understanding how these alloys interface with surfaces of various composition and texture is critical to the development of parallel processing technology, which is needed to create more complex and low-cost systems. In this work, we explore the wetting behaviors between droplets of gallium-indium alloys and thin metal films, with an emphasis on tin and indium substrates. We find that metallic droplets reactively wet thin metal foils, but the wettability of the foils may be tuned by the surface texture (produced by sputtering). The effects of both composition and texture of the substrate on wetting dynamics are quantified by measuring contact angle and droplet contact diameter as a function of time. Finally, we apply the Cassie-Baxter model to the sputtered and native substrates to gain insight into the behavior of liquid metals and the role of the oxide formation during interfacial processes. PMID:24358994

  19. Direct Band Gap Gallium Antimony Phosphide (GaSbxP1−x) Alloys

    PubMed Central

    Russell, H. B.; Andriotis, A. N.; Menon, M.; Jasinski, J. B.; Martinez-Garcia, A.; Sunkara, M. K.

    2016-01-01

    Here, we report direct band gap transition for Gallium Phosphide (GaP) when alloyed with just 1–2 at% antimony (Sb) utilizing both density functional theory based computations and experiments. First principles density functional theory calculations of GaSbxP1−x alloys in a 216 atom supercell configuration indicate that an indirect to direct band gap transition occurs at x = 0.0092 or higher Sb incorporation into GaSbxP1−x. Furthermore, these calculations indicate band edge straddling of the hydrogen evolution and oxygen evolution reactions for compositions ranging from x = 0.0092 Sb up to at least x = 0.065 Sb making it a candidate for use in a Schottky type photoelectrochemical water splitting device. GaSbxP1−x nanowires were synthesized by reactive transport utilizing a microwave plasma discharge with average compositions ranging from x = 0.06 to x = 0.12 Sb and direct band gaps between 2.21 eV and 1.33 eV. Photoelectrochemical experiments show that the material is photoactive with p-type conductivity. This study brings attention to a relatively uninvestigated, tunable band gap semiconductor system with tremendous potential in many fields. PMID:26860470

  20. Ab initio study of gallium stabilized δ-plutonium alloys and hydrogen-vacancy complexes.

    PubMed

    Hernandez, Sarah C; Schwartz, Daniel S; Taylor, Christopher D; Ray, Asok K

    2014-06-11

    All-electron density functional theory was used to investigate δ-plutonium (δ-Pu) alloyed with gallium (Ga) impurities at 3.125, 6.25, 9.375 atomic (at)% Ga concentrations. The results indicated that the lowest energy structure is anti-ferromagnetic, independent of the Ga concentration. At higher Ga concentrations (>3.125 at%), the position of the Ga atoms are separated by four nearest neighbor Pu-Pu shells. The results also showed that the lattice constant contracts with increasing Ga concentration, which is in agreement with experimental data. Furthermore with increasing Ga concentration, the face-centered-cubic structure becomes more stably coupled with increasing short-range disorder. The formation energies show that the alloying process is exothermic, with an energy range of -0.028 to -0.099 eV/atom. The analyses of the partial density of states indicated that the Pu-Ga interactions are dominated by Pu 6d and Ga 4p hybridizations, as well as Ga 4s-4p hybridizations. Finally, the computed formation energies for vacancy and hydrogen-vacancy complexes within the 3.125 at% Ga cell were 1.12 eV (endothermic) and -3.88 eV (exothermic), respectively. In addition, the hydrogen atom prefers to interact much more strongly to the Pu atom than the Ga atom in the hydrogen-vacancy complex. PMID:24832613

  1. Shear strain mediated magneto-electric effects in composites of piezoelectric lanthanum gallium silicate or tantalate and ferromagnetic alloys

    SciTech Connect

    Sreenivasulu, G.; Piskulich, E.; Srinivasan, G.; Qu, P.; Qu, Hongwei; Petrov, V. M.; Fetisov, Y. K.; Nosov, A. P.

    2014-07-21

    Shear strain mediated magneto-electric (ME) coupling is studied in composites of piezoelectric Y-cut lanthanum gallium silicate (LGS) or tantalate (LGT) and ferromagnetic Fe-Co-V alloys. It is shown that extensional strain does not result in ME effects in these layered composites. Under shear strain generated by an ac and dc bias magnetic fields along the length and width of the sample, respectively, strong ME coupling is measured at low-frequencies and at mechanical resonance. A model is discussed for the ME effects. These composites of Y-cut piezoelectrics and ferromagnetic alloys are of importance for shear strain based magnetic field sensors.

  2. Shear strain mediated magneto-electric effects in composites of piezoelectric lanthanum gallium silicate or tantalate and ferromagnetic alloys

    NASA Astrophysics Data System (ADS)

    Sreenivasulu, G.; Qu, P.; Piskulich, E.; Petrov, V. M.; Fetisov, Y. K.; Nosov, A. P.; Qu, Hongwei; Srinivasan, G.

    2014-07-01

    Shear strain mediated magneto-electric (ME) coupling is studied in composites of piezoelectric Y-cut lanthanum gallium silicate (LGS) or tantalate (LGT) and ferromagnetic Fe-Co-V alloys. It is shown that extensional strain does not result in ME effects in these layered composites. Under shear strain generated by an ac and dc bias magnetic fields along the length and width of the sample, respectively, strong ME coupling is measured at low-frequencies and at mechanical resonance. A model is discussed for the ME effects. These composites of Y-cut piezoelectrics and ferromagnetic alloys are of importance for shear strain based magnetic field sensors.

  3. Gallium nitrogen arsenide and gallium arsenic bismuth: Structural and electronic properties of two resonant state semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Young, Erin Christina

    Semiconductor alloys that are lattice matched to GaAs but have a smaller energy band gap are of interest for numerous applications, including infrared lasers for telecommunications, high efficiency solar cells, and high electron mobility transistors. For high optoelectronic efficiency, these materials must be highly perfect single crystals with low defect densities. In this thesis, two substitutional GaAs-based alloy families, nitrides and bismides, are investigated experimentally. In the first alloy, GaNAs, the addition of N results in a large band gap reduction, though the small size of the N relative to As introduces tensile strain into the lattice, and the high electronegativity of N attracts electrons. The second alloy, GaAsBi, also has a smaller band gap and is formed by the addition of the very large Bi atom to GaAs, which introduces compressive strain and tends to attract holes. The experimental investigations of these alloys focused on elucidating the relationships between the growth process, atomic structure, and electronic properties. Films were grown by molecular beam epitaxy (MBE) with in-situ process monitoring and subject to post-growth structural and electronic characterization. For GaNAs and a related alloy. InGaNAs, degradation in luminescence efficiency, mobility and structural integrity were observed as the nitrogen content of the alloy was increased. A comprehensive study of strain relaxation in compressively strained InGaNAs and InGaAs quantum wells revealed that the nitrogen alloying did not have an effect on the critical thickness for dislocation formation, or the dislocation density in relaxed films. At large lattice mismatch, InGaNAs quantum wells were observed to relax by means of unusually oriented pure edge-type misfit dislocations aligned with <100> directions, likely due to the high stress associated with the large misfit. Use of bismuth as a non-incorporating surfactant during growth was successfully applied to improve the material

  4. Characterization of bending magnetostriction in iron-gallium alloys for nanowire sensor applications

    NASA Astrophysics Data System (ADS)

    Downey, Patrick Ramon

    This research explores the possibility of using electrochemically deposited nanowires of magnetostrictive iron-gallium (Galfenol) to mimic the sensing capabilities of biological cilia. Sensor design calls for incorporating Galfenol nanowires cantilevered from a membrane and attached to a conventional magnetic field sensor. As the wires deflect in response to acoustic, air flow, or tactile excitation, the resultant bending stresses induce changes in magnetization that due to the scale of the nanowires offer the potential for excellent spatial resolution and frequency bandwidth. In order to determine the suitability for using Galfenol nanowires in this role, the first task was experimentally characterizing magnetostrictive transduction in bending beam structures, as this means of operation has been unattainable in previous materials research due to low tensile strengths in conventional alloys such as Terfenol-D. Results show that there is an appreciable sensing response from cantilevered Galfenol beams and that this phenomenon can be accurately modeled with an energy based formulation. For progressing experiments to the nanowire scale, a nanomanipulation instrument was designed and constructed that interfaces within a scanning electron microscope and allows for real time characterization of individual wires with diameters near 100 nm. The results of mechanical tensile testing and dynamic resonance identification reveal that the Galfenol nanowires behave similarly to the bulk material with the exception of a large increase in ultimate tensile strength. The magnetic domain structure of the nanowires was theoretically predicted and verified with magnetic force microscopy. An experimental methodology was developed to observe the coupling between bending stress and magnetization that is critical for accurate sensing, and the key results indicate that specific structural modifications need to be made to reduce the anisotropy in the nanowires in order to improve the

  5. Gallium scan

    MedlinePlus

    Liver gallium scan; Bony gallium scan ... You will get a radioactive material called gallium injected into your vein. The gallium travels through the bloodstream and collects in the bones and certain organs. Your health care provider will ...

  6. Magnetic and Magnetocaloric Properties in Non-Stoichiometric Gallium Deficient Ni2MnGa1-x Heusler Alloys

    NASA Astrophysics Data System (ADS)

    Madden, Alexander; Corrigan, Mollie; Barton, Linda

    Magnetic data show that off-stoichiometric gallium deficient Heusler alloys of the form Ni2MnGa1-x have structural martensite transition temperatures that increase strongly with x, while their ferromagnetic Curie temperatures remain nearly unchanged. The martensite transition approaches room temperature for x = 0 . 13 . Samples were prepared by rf induction heating. The influence of quenching and post annealing on magnetic properties, as well as structural grain sizes and magnetic domain structure, were investigated. Since the first order structural phase transition can be adjusted to any convenient temperature, these materials offer intriguing possibilities as magnetic refrigerants. Magnetocaloric properties were investigated by direct measurement of ΔT with the application of field ΔH .

  7. Effect of gallium alloying on the structure, the phase composition, and the thermoelastic martensitic transformations in ternary Ni-Mn-Ga alloys

    NASA Astrophysics Data System (ADS)

    Belosludtseva, E. S.; Kuranova, N. N.; Marchenkova, E. B.; Popov, A. G.; Pushin, V. G.

    2016-04-01

    The effect of gallium alloying on the structure, the phase composition, and the properties of quasibinary Ni50Mn50- z Ga z (0 ⩽ z ⩽ 25 at %) alloys is studied over a wide temperature range. The influence of the alloy composition on the type of crystal structure in high-temperature austenite and martensite and the critical martensitic transformation temperatures is analyzed. A general phase diagram of the magnetic and structural transformations in the alloys is plotted. The temperature-concentration boundaries of the B2 and L21 superstructures in the austenite field, the tetragonal L10 (2 M) martensite, and the 10 M and 14 M martensite phases with complex multilayer crystal lattices are found. The predominant morphology of martensite is shown to be determined by the hierarchy of the packets of thin coherent lamellae of nano- and submicrocrystalline crystals with planar habit plane boundaries close to {011} B2. Martensite crystals are twinned along one of the 24 24{ {011} }{< {01bar 1} rangle _{B2}} "soft" twinning shear systems, which provides coherent accommodation of the martensitic transformation-induced elastic stresses.

  8. Chemical short range order and magnetic correction in liquid manganese-gallium zero alloy

    NASA Astrophysics Data System (ADS)

    Grosdidier, B.; Ben Abdellah, A.; Osman, S. M.; Ataati, J.; Gasser, J. G.

    2015-12-01

    The Mn66Ga34 alloy at this particular composition is known to be zero alloy in which the linear combination of the two neutron scattering lengths weighted by the atomic compositions vanish. Thus for this specific concentration, the effect of the partial structure factors SNN and SNC is cancelled by a weighted term, which value is zero. Then the measured total structure factor S(q) gives directly the concentration-concentration structure factor SCC(q). We present here the first experimental results of neutron diffraction on the Mn66Ga34 "null matrix alloy" at 1050 °C. The main peak of the experimental SCC(q) gives a strong evidence of a hetero-atomic chemical order in this coordinated alloy. This order also appears in real space radial distribution function which is calculated by the Fourier transform of the structure factor. The degree of hetero-coordination is discussed together with other manganese-polyvalent alloys. However manganese also shows abnormal magnetic scattering in the alloy structure factor which must be corrected. This correction gives an experimental information on the mean effective spin of manganese in this liquid alloy. We present the first critical theoretical calculations of the magnetic correction factor in Mn-Ga zero-alloy based on our accurate experimental measurements of SCC(q).

  9. Thermodynamics of reaction of praseodymium with gallium-indium eutectic alloy

    NASA Astrophysics Data System (ADS)

    Melchakov, S. Yu.; Ivanov, V. A.; Yamshchikov, L. F.; Volkovich, V. A.; Osipenko, A. G.; Kormilitsyn, M. V.

    2013-06-01

    Thermodynamic properties of Ga-In eutectic alloys saturated with praseodymium were determined for the first time employing the electromotive force method. The equilibrium potentials of the Pr-In alloys saturated with praseodymium (8.7-12.1 mol.% Pr) and Pr-Ga-In alloys (containing 0.0012-6.71 mol.% Pr) were measured between 573-1073 K. Pr-In alloy containing solid PrIn3 with known thermodynamic properties was used as the reference electrode when measuring the potentials of ternary Pr-In-Ga alloys. Activity, partial and excessive thermodynamic functions of praseodymium in alloys with indium and Ga-In eutectic were calculated. Activity (a), activity coefficients (γ) and solubility (X) of praseodymium in the studied temperature range can be expressed by the following equations: lgaα-Pr(In) = 4.425 - 11965/T ± 0.026. lgаα-Pr(Ga-In) = 5.866 - 14766/T ± 0.190. lgγα-Pr(Ga-In) = 2.351 - 9996/T ± 0.39. lgХPr(Ga-In) = 3.515 - 4770/T ± 0.20.

  10. Silver catalyzed gallium phosphide nanowires integrated on silicon and in situ Ag-alloying induced bandgap transition.

    PubMed

    Huang, Kangrong; Zhang, Zhang; Zhou, Qingwei; Liu, Liwei; Zhang, Xiaoyan; Kang, Mengyang; Zhao, Fuli; Lu, Xubing; Gao, Xingsen; Liu, Junming

    2015-01-26

    In this work, we demonstrate a silver catalyzed heteroepitaxial growth of gallium phosphide nanowires (GaP NWs) on silicon. The morphology and growth direction of GaP NWs on differently orientated Si substrates were investigated. From crystallographic analysis, we inferred that Ag from catalyst is incorporated into the GaP during the chemical beam epitaxy (CBE) process. Using the PL spectrum and time-resolved emission spectroscopy, the optical properties of Ag-catalyzed GaP NWs were greatly modified, with bandgap transitions in the blue range. The Raman characterizations further confirmed the Ag incorporation into GaP during the growth. From the bandgap calculations, it was deduced that Ag was substituted on the Ga site with bandgap broadening. The in situ Ag-alloying during the growth of Ag-catalyzed GaP NWs greatly modified the band structure of GaP, and could lead to further applications in optoelectronics for low-dimensional GaP-based nanomaterials. PMID:26044077

  11. ISOTHERMAL (DELTA)/(ALPHA-PRIME) TRANSFORMATION AND TTT DIAGRAM IN A PLUTONIUM GALLIUM ALLOY

    SciTech Connect

    Oudot, B P; Blobaum, K M; Wall, M A; Schwartz, A J

    2005-11-11

    Differential scanning calorimetry (DSC) is used as an alternative approach to determining the tine-temperature-transformation (TTT) diagram for the martensitic delta to alpha-prime transformation in a Pu-2.0 at% Ga alloy. Previous work suggests that the TTT diagram for a similar alloy exhibits an unusual double-C curve for isothermal holds of less than 100 minutes. Here, we extend this diagram to 18 hours, and confirm the double-C curve behavior. When the sample is cooled prior to the isothermal holds, the delta to alpha-prime transformation is observed as several overlapping exothermic peaks. These peaks are very reproducible, and they are believed to be the result of different kinds of delta to alpha-prime martensitic transformation. This may be due to the presence of different nucleation sites and/or different morphologies.

  12. Measurement of field-dependence elastic modulus of iron-gallium alloy using tensile test

    SciTech Connect

    Yoo, Jin-Hyeong; Flatau, Alison B.

    2005-05-15

    An experimental approach is used to identify Galfenol material properties under dc magnetic bias fields. Dog-bone-shaped specimens of single crystal Fe{sub 100-x}Ga{sub x}, where 18.6{<=}x{<=}33.2, underwent tensile testing along two crystallographic axis orientations, [110] and [100]. Young's modulus and Poisson's ratio sensitivity to magnetic fields and stoichiometry are investigated. Data are presented that demonstrate the dependence of these properties on applied magnetic-field levels and provide a substantial assessment of the trends in material properties for performance of alloys of different stoichiometries under varied operating conditions.

  13. Orientation dependences of surface morphologies and energies of iron-gallium alloys

    NASA Astrophysics Data System (ADS)

    Costa, Marcio; Wang, Hui; Hu, Jun; Wu, Ruqian; Na, Suok-Min; Chun, Hyunsuk; Flatau, Alison B.

    2016-05-01

    We investigated the surface energies of several low-index surfaces of the D03-type FeGa alloys (Galfenol), using density functional theory (DFT) simulations and contact angle measurements. DFT calculations predict that (1) the Ga-covered (110) surface of Galfenol is more stable in the Ga-rich condition, while Ga-covered (001) surface of Galfenol become more favorable in Ga-poor condition; and (2) a full Ga overlayer tends to form on top of Galfenol surfaces regardless their orientation, both in agreement with the experimental observation. We also studied Ga segregation in the bcc Fe matrix in order to explore the possibility of Ga precipitation away from Fe. It was found that the Fe-Ga separation is unlikely to occur since Ga diffusion toward the surface is effectively self-stopped once the Ga overlayers form on the facets.

  14. Orientation dependences of surface morphologies and energies of iron-gallium alloys

    NASA Astrophysics Data System (ADS)

    Costa, Marcio; Wang, Hui; Hu, Jun; Wu, Ruqian; Na, Suok-Min; Chun, Hyunsuk; Flatau, Alison B.; University of California, Irvine Collaboration; University of Maryland Collaboration

    Magnetostrictive Fe-Ga alloys (Galfenol) are very promising rare-earth free materials for applications in sensors, actuators, energy-harvesters and spintronic devices. Investigation on surface energies of Galfenol based on density functional calculations (DFT) and contact angle measurements may provide fundamental understandings and guidance to further optimize the performance of Galfenol. DFT calculations predict that Ga-covered (110) surface of Galfenol is more stable in Ga-rich condition, while Ga-covered (001) surface of Galfenol surface become more favorable in Ga-poor condition. Moreover, a full Ga overlayer tends to form on top of Gafenol surfaces regardless their orientation, both in agreement with the experimental observation. Further studies on Ga segregation in the Fe bcc matrix demonstrate that the Fe-Ga separation is unlikely to occur since Ga diffusion toward the surface is effectively self-stopped once the Ga overlayers form on the facets. This work was supported by the National Science Foundation through the SUSCHEM-Collaborative Research program (Grant Numbers: DMR-1310494 at UCI and DMR-1310447 at UMD). Work at UCI was also supported by the ONR (Grant Number: N00014-13-1-0445).

  15. Surface reconstructions and morphology of indium gallium arsenide compound semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Riposan, Alexandru

    Lattice-matched In0.53Ga0.47As/InP(001) and compressively strained In0.27Ga0.73As/GaAs(001) and In0.81Ga 0.19As/InP(001) compound semiconductor layers were grown by molecular beam epitaxy (MBE) and analyzed by in-situ scanning tunneling microscopy (STM) and ex-situ atomic force microscopy (AFM). Regular (4x3) and irregular (nx3) alloy reconstructions were observed at all compositions. In addition, the strained surfaces contain alpha2(2x4) and beta2(2x4) reconstructions at the lower and higher In compositions, respectively. New models were proposed for the (4x3) reconstruction, which are consistent with the experimental results and obey the electron counting rule. In these models, the (4x3) reconstruction is As-rich, but contains As-metal heterodimers, in addition to As dimers and metal dimers. These models can also be used to compose disordered (nx3) surfaces while still obeying the electron counting rule. The experiments suggest that the (2x4) reconstructions are favored by compressive misfit strain and are enriched in In compared with the (4x3)/(nx3) reconstructions. At moderate misfit strains and temperatures, the critical film thickness for three-dimensional (3D) growth is increased by increasing the As overpressure during film deposition. This effect provides an additional method to control the transition to 3D growth and has applications in device fabrication. Large 3D islands form during the annealing of planar pseudomorphic In 0.27Ga0.73As/GaAs films, and later disappear with continuing annealing. These islands are different from those formed during film deposition. The formation of these features is strain-driven, while their dissolution is triggered by In desorption. A step instability was also observed during annealing at this composition, consisting in the cusping of step edges and the formation of surface pits and step bunches. The driving force for this instability is likely the creation of new step line due to the compressive strain, through step

  16. Structure and properties of dilute nitride gallium arsenic nitride alloy films

    NASA Astrophysics Data System (ADS)

    Reason, Matthew J.

    Dilute nitride semiconductor alloys are useful for a wide range of applications. A fundamental understanding of how various growth regimes affect the structural, optical and electronic properties is needed for further optimization of device performance. This thesis explores these issues in GaAsN. We investigated the temperature-dependent mechanisms of growth for GaAsN films. At low temperatures, limited adatom surface mobility leads to layer-by-layer growth. As the temperature increases, the interplay between adatom surface diffusivity and the step-edge diffusion barrier leads to the formation of "mounds". For sufficiently high temperatures, adatoms overcome the step-edge diffusion barrier, resulting in layer-by-layer growth once again. Using a combination of nuclear reaction analysis and Rutherford backscattering spectrometry, we observe significant composition-dependent incorporation of N into non-substitutional sites, presumably as either N-N or N-As split interstitials. The (2x1) reconstruction is identified as the surface structure which leads to the highest substitutional N incorporation, presumably due to the high number of group V sites per unit area available for N-As surface exchange. For coherently strained films, a comparison of stresses measured via in-situ wafer curvature measurements, with those determined from x-ray rocking curves is used to quantify composition-dependent elastic constant bowing parameters. For films with x>2.5%, we observe that stress relaxation occurs by a combination of elastic relaxation via island formation and plastic relaxation associated with the formation of stacking faults. Optical absorption measurements reveal a substitutional nitrogen composition-dependent band gap energy reduction, which is less significant than typical literature reports. However, when the data are corrected to account for the typical 20% incorporation of non-substitutional nitrogen, all measurements reveal a band gap reduction of ˜125 meV per 1% N

  17. Gallium Safety in the Laboratory

    SciTech Connect

    Cadwallader, L.C.

    2003-05-07

    A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

  18. Gallium Safety in the Laboratory

    SciTech Connect

    Lee C. Cadwallader

    2003-06-01

    A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

  19. Gallium--A smart metal

    USGS Publications Warehouse

    Foley, Nora; Jaskula, Brian

    2013-01-01

    Gallium is a soft, silvery metallic element with an atomic number of 31 and the chemical symbol Ga. The French chemist Paul-Emile Lecoq de Boisbaudran discovered gallium in sphalerite (a zinc-sulfide mineral) in 1875 using spectroscopy. He named the element "gallia" after his native land of France (formerly Gaul; in Latin, Gallia). The existence of gallium had been predicted in 1871 by Dmitri Mendeleev, the Russian chemist who published the first periodic table of the elements. Mendeleev noted a gap in his table and named the missing element "eka-aluminum" because he determined that its location was one place away from aluminum in the table. Mendeleev thought that the missing element (gallium) would be very much like aluminum in its chemical properties, and he was right. Solid gallium has a low melting temperature (~29 degrees Celsius, or °C) and an unusually high boiling point (~2,204 °C). Because of these properties, the earliest uses of gallium were in high-temperature thermometers and in designing metal alloys that melt easily. The development of a gallium-based direct band-gap semiconductor in the 1960s led to what is now one of the most well-known applications for gallium-based products--the manufacture of smartphones and data-centric networks.

  20. Development of gallium aluminum phosphide electroluminescent diodes

    NASA Technical Reports Server (NTRS)

    Chicotka, R. J.; Lorenz, M. R.; Nethercot, A. H.; Pettit, G. D.

    1972-01-01

    Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.

  1. Acoustic and NMR investigations of melting and crystallization of indium-gallium alloys in pores of synthetic opal matrices

    NASA Astrophysics Data System (ADS)

    Pirozerskii, A. L.; Charnaya, E. V.; Lee, M. K.; Chang, L. J.; Nedbai, A. I.; Kumzerov, Yu. A.; Fokin, A. V.; Samoilovich, M. I.; Lebedeva, E. L.; Bugaev, A. S.

    2016-05-01

    The paper presents the results of studying the crystallization and melting processes of Ga-In eutectic alloys, which are embedded in opal matrices, using acoustic and NMR methods. The indium concentrations in the alloys were 4, 6, 9, and 15 at %. Measurements were performed upon cooling from room temperature to complete crystallization of the alloys and subsequent heating. It is revealed how the size effects and alloy composition influence the formation of phases with α- and β-Ga structures and on changes in the melting-temperature ranges. A difference was observed between the results obtained using acoustic and NMR methods, which was attributed to different temperature measurement conditions.

  2. Gallium trace on-line preconcentration/separation and determination using a polyurethane foam mini-column and flame atomic absorption spectrometry. Application in aluminum alloys, natural waters and urine.

    PubMed

    Anthemidis, Aristidis N; Zachariadis, George A; Stratis, John A

    2003-07-27

    A sensitive and selective flow injection time-based method for on-line preconcentration/separation and determination of gallium by flame atomic absorption spectrometry at trace levels was developed. The on-line formed gallium chloride complex is sorbed onto a polyether-type polyurethane foam mini-column, followed by on-line quantitative elution with isobutyl methyl ketone and direct introduction into the flame pneumatic nebulizer of the atomic absorption spectrometer. All chemical and flow variables of the system as well as the possible interferences were studied. The manner of strong HCl solutions propulsion was investigated and established using a combination of two displacement bottles. For 90 s preconcentration time, a sample frequency of 28 h(-1), an enhancement factor of 40, a detection limit of 6 microg l(-1) and a precision expressed as relative standard deviation (s(r)) of 3.3% (at 1.00 mg l(-1)) were achieved. The calibration curve is linear over the concentration range 0.02-3.00 mg l(-1). The accuracy of the developed method was sufficient and evaluated by the analysis of a silicon-aluminum alloy standard reference material. Finally, it was successfully applied to gallium determination in commercial aluminum alloys, natural waters and urine. PMID:18969117

  3. Compositional control of the mixed anion alloys in gallium-free InAs/InAsSb superlattice materials for infrared sensing

    NASA Astrophysics Data System (ADS)

    Haugan, H. J.; Szmulowicz, F.; Mahalingam, K.; Brown, G. J.; Bowers, S. L.; Peoples, J. A.

    2015-08-01

    Gallium (Ga)-free InAs/InAsSb superlattices (SLs) are being actively explored for infrared detector applications due to the long minority carrier lifetimes observed in this material system. However, compositional and dimensional changes through antimony (Sb) segregation during InAsSb growth can significantly alter the detector properties from the original design. At the same time, precise compositional control of this mixed-anion alloy system is the most challenging aspect of Ga-free SL growth. In this study, the authors establish epitaxial conditions that can minimize Sb surface segregation during growth in order to achieve high-quality InAs/InAsSb SL materials. A nominal SL structure of 77 Å InAs/35 Å InAs0.7Sb0.3 that is tailored for an approximately six-micron response at 150 K was used to optimize the epitaxial parameters. Since the growth of mixed-anion alloys is complicated by the potential reaction of As2 with Sb surfaces, the authors varied the deposition temperature (Tg) under a variety of Asx flux conditions in order to control the As2 surface reaction on a Sb surface. Experimental results reveal that, with the increase of Tg from 395 to 440 °C, Sb-mole fraction x in InAs1-xSbx layers is reduced by 21 %, under high As flux condition and only by 14 %, under low As flux condition. Hence, the Sb incorporation efficiency is extremely sensitive to minor variations in epitaxial conditions. Since a change in the designed compositions and effective layer widths related to Sb segregation disrupts the strain balance and can significantly impact the long-wavelength threshold and carrier lifetime, further epitaxial studies are needed in order to advance the state-of-the-art of this material system.

  4. Optical, structural, and transport properties of indium nitride, indium gallium nitride alloys grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Khan, Neelam

    InGaN based, blue and green light emitting diodes (LEDs) have been successfully produced over the past decade. But the progress of these LEDs is often limited by the fundamental problems of InGaN such as differences in lattice constants, thermal expansion coefficients and physical properties between InN and GaN. This difficulty could be addressed by studying pure InN and InxGa 1-xN alloys. In this context Ga-rich InxGa1-xN (x ≤ 0.4) epilayers were grown by metal organic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) measurements showed InxGa1-xN films with x= 0.37 had single phase. Phase separation occurred for x ˜ 0.4. To understand the issue of phase separation in Ga-rich InxGa 1-xN, studies on growth of pure InN and In-rich InxGa 1-xN alloys were carried out. InN and In-rich InxGa1-xN (x ˜ 0.97-0.40) epilayers were grown on AlN/Al2O3 templates. A Hall mobility of 1400 cm2/Vs with a carrier concentration of 7x1018cm -3 was observed for InN epilayers grown on AlN templates. Photoluminescence (PL) emission spectra revealed a band to band emission peak at ˜0.75 eV for InN. This peak shifted to 1.15 eV when In content was varied from 1.0 to 0.63 in In-rich InxGa1-xN epilayers. After growth parameter optimization of In-rich InxGa1-xN alloys with (x = 0.97-0.40) were successfully grown without phase separation. Effects of Mg doping on the PL properties of InN epilayers grown on GaN/Al 2O3 templates were investigated. An emission line at ˜ 0.76 eV, which was absent in undoped InN epilayers and was about 60 meV below the band edge emission peak at ˜ 0.82 eV, was observed to be the dominant emission in Mg-doped InN epilayers. PL peak position and the temperature dependent emission intensity corroborated each other and suggested that Mg acceptor level in InN is about 60 meV above the valance band maximum. Strain effects on the emission properties of InGaN/GaN multiple quantum wells (MQWs) were studied using a single blue LED wafer possessing a continuous

  5. Gallium fluoroarsenates.

    PubMed

    Marshall, Kayleigh L; Armstrong, Jennifer A; Weller, Mark T

    2015-07-28

    Six new phases in the gallium-fluoride-arsenate system have been synthesised hydrofluorothermally using a fluoride-rich medium and "HAsF6" (HF : AsF5) as a reactant. RbGaF3(H2AsO4), KGaF(H2AsO4) and [piperazine-H2]2[Ga2F8(HAsO4)]·H2O have one dimensional structures, [DABCO-H2]2[Ga4F7O2H(AsO4)2]·4H2O consists of two dimensionally connected polyhedral layers, while GaF(AsO3[OH,F])2 and (NH4)3Ga4F9(AsO4)2 both have three-dimensionally connected polyhedral frameworks. PMID:26095086

  6. Compatibility of ITER candidate structural materials with static gallium

    SciTech Connect

    Luebbers, P.R.; Michaud, W.F.; Chopra, O.K.

    1993-12-01

    Tests were conducted on the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor, e.g., Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy, as well as Armco iron, Nickel 270, and pure chromium. Type 316 stainless steel is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400{degrees}C, corrosion rates are {approx}4.0, 0.5, and 0.03 mm/yr for type 316 SS, Inconel 625, and Nb-5 Mo- 1 Zr alloy, respectively. The pure metals react rapidly with gallium. In contrast to findings in earlier studies, pure iron shows greater corrosion than nickel. The corrosion rates at 400{degrees}C are {ge}88 and 18 mm/yr, respectively, for Armco iron and Nickel 270. The results indicate that at temperatures up to 400{degrees}C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The solubility data for pure metals and oxygen in gallium are reviewed. The physical, chemical, and radioactive properties of gallium are also presented. The supply and availability of gallium, as well as price predictions through the year 2020, are summarized.

  7. Investigations in gallium removal

    SciTech Connect

    Philip, C.V.; Pitt, W.W.; Beard, C.A.

    1997-11-01

    Gallium present in weapons plutonium must be removed before it can be used for the production of mixed-oxide (MOX) nuclear reactor fuel. The main goal of the preliminary studies conducted at Texas A and M University was to assist in the development of a thermal process to remove gallium from a gallium oxide/plutonium oxide matrix. This effort is being conducted in close consultation with the Los Alamos National Laboratory (LANL) personnel involved in the development of this process for the US Department of Energy (DOE). Simple experiments were performed on gallium oxide, and cerium-oxide/gallium-oxide mixtures, heated to temperatures ranging from 700--900 C in a reducing environment, and a method for collecting the gallium vapors under these conditions was demonstrated.

  8. Gallium nitride optoelectronic devices

    NASA Technical Reports Server (NTRS)

    Chu, T. L.; Chu, S. S.

    1972-01-01

    The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

  9. Isoelectronic Traps in Gallium Phosphide

    NASA Astrophysics Data System (ADS)

    Christian, Theresa; Alberi, Kirstin; Beaton, Daniel; Fluegel, Brian; Mascarenhas, Angelo

    2015-03-01

    Isoelectronic substitutional dopants can result in strongly localized exciton traps within a host bandstructure such as gallium arsenide (GaAs) or gallium phosphide (GaP). These traps have received great attention for their role in the anomalous bandgap bowing of nitrogen or bismuth-doped GaAs, creating the dramatic bandgap tunability of these unusual dilute alloys. In the wider, indirect-bandgap host material GaP, these same isoelectronic dopants create bound states within the gap that can have very high radiative efficiency and a wealth of discrete spectral transitions illuminating the symmetry of the localized excitonic trap state. We will present a comparative study of nitrogen and bismuth isoelectronic traps in GaP. Research was supported by the U. S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division under contract DE-AC36-08GO28308 and by the Department of Energy Office of Science Graduate Fellowship Program (DOE SCGF), made possible in part by the American Recovery and Reinvestment Act of 2009, administered by ORISE-ORAU under contract no. DE-AC05-06OR23100.

  10. Reversible expansion of gallium-stabilized delta-plutonium

    SciTech Connect

    Wolfer, W; Oudot, B; Baclet, N

    2006-01-26

    The transient expansion of plutonium-gallium alloys observed both in the lattice parameter as well as in the dimension of a sample held at ambient temperature is explained by assuming incipient precipitation of Pu{sub 3}Ga. However, this ordered {zeta}{prime}-phase is also subject to radiation-induced disordering. As a result, the gallium-stabilized {delta}-phase, being metastable at ambient temperature, is both driven towards thermodynamic equilibrium by radiation-enhanced diffusion of gallium and at the same time pushed back to its metastable state by radiation-induced disordering. A steady state is reached in which only a modest fraction of the gallium present is tied up in the {zeta}{prime}-phase.

  11. Reversible expansion of gallium-stabilized (delta)-plutonium

    SciTech Connect

    Wolfer, W G; Oudot, B; Baclet, N

    2006-02-27

    It is shown that the transient expansion of plutonium-gallium alloys observed both in the lattice parameter as well as in the dimension of a sample held at ambient temperature can be explained by assuming incipient precipitation of Pu{sub 3}Ga. However, this ordered {zeta}-phase is also subject to radiation-induced disordering. As a result, the gallium-stabilized {delta}-phase, being metastable at ambient temperature, is driven towards thermodynamic equilibrium by radiation-enhanced diffusion of gallium and at the same time reverted back to its metastable state by radiation-induced disordering. A steady state is reached in which only a modest fraction of the gallium present is arranged in ordered {zeta}-phase regions.

  12. Lung gallium scan

    MedlinePlus

    ... inflammation in the lungs, most often due to sarcoidosis or a certain type of pneumonia. Normal Results ... up very little gallium. What Abnormal Results Mean Sarcoidosis Other respiratory infections, most often pneumocystis jirovecii pneumonia ...

  13. Preventing Supercooling Of Gallium

    NASA Technical Reports Server (NTRS)

    Massucco, Arthur A.; Wenghoefer, Hans M.; Wilkins, Ronnie

    1994-01-01

    Principle of heterogeneous nucleation exploited to prevent gallium from supercooling, enabling its use as heat-storage material that crystallizes reproducibly at its freezing or melting temperature of 29 to 30 degrees C. In original intended application, gallium used as heat-storage material in gloves of space suits. Terrestrial application lies in preparation of freezing-temperature reference samples for laboratories. Principle of heterogeneous nucleation also exploited similarly in heat pipes filled with sodium.

  14. Electrodeposition of gallium for photovoltaics

    DOEpatents

    Bhattacharya, Raghu N.

    2016-08-09

    An electroplating solution and method for producing an electroplating solution containing a gallium salt, an ionic compound and a solvent that results in a gallium thin film that can be deposited on a substrate.

  15. Optical Properties and Electronic Structures of d- and F-Electron Metals and Alloys, Silver-Indium Nickel - GOLD-GALLIUM(2), PLATINUM-GALLIUM(2), - - Cobalt-Aluminum CERIUM-TIN(3), and LANTHANUM-TIN(3)

    NASA Astrophysics Data System (ADS)

    Kim, Kwang Joo

    1990-01-01

    Optical properties and electronic structures of disordered Ag_{1-x}In_ {x} (x = 0.0, 0.04, 0.08, 0.12) and Ni_{1-x}Cu_{x }(x = 0.0, 0.1, 0.3, 0.4) alloys and ordered AuGa_2, PtGa _2, beta^' -NiAl, beta^' -CoAl, CeSn_3, and LaSn_3 have been studied. The complex dielectric functions have been determined for Ag_{1-x}In _{x},Ni_{1-x}Cu_ {x},AuGa_2, and PtGa_2 in the 1.2-5.5 eV region and for CeSn_3 and LaSn_3 in the 1.5-4.5 eV region using spectroscopic ellipsometry. Self-consistent relativistic band calculations using the linearized-augmented -plane-wave method have been performed for AuGa _2, PtGa_2,beta^' -CoAl, CeSn_3, and LaSn_3 to interpret the experimental optical spectra. In Ag_{1-x}In_{x} , the intraband scattering rate increases with increasing In concentration in the low-energy region (<3.5 eV). As the In concentration increases, the onset energy of the L_3to L_sp{2}{'}( E_{F}) transitions, 4.03 eV for pure Ag, shifts to higher energies, while that of the L_sp{2}{'}(E _{F}) to L_1 transitions, 3.87 eV for pure Ag, shifts to lower energies. This is only partly attributable to the rise of the Fermi level E_{F} caused by an increase in the average number of electrons per atom due to the In solute and to the narrowing of the Ag 4d-bands. The L_1-band may also lower as In is added. In Ni_{1-x}Cu_ {x}, the 4.7-eV edge (from transitions between the s-d-hybridized bands well below E_ {F} and the s-p-like bands above E _{F}, e.g., X_1 to X_sp{4}{'} ) shifts to higher energies, while the 1.5-eV edge (from transitions between a p-like band below E _{F} and a d-band above E _{F}, e.g., L_sp {2}{'} to L_3) remains at the same energy as the Cu concentration increases. A structure grows in the (2-3)-eV region as Cu is added, and it is interpreted as being due to transitions between the localized Cu subbands. For AuGa_2 and PtGa _2, both compounds show interband absorption at low photon energies (<1.3 eV). The interband absorption for AuGa_2 is strong at about 2 eV while

  16. Non-Invasive Drosophila ECG Recording by Using Eutectic Gallium-Indium Alloy Electrode: A Feasible Tool for Future Research on the Molecular Mechanisms Involved in Cardiac Arrhythmia

    PubMed Central

    Kuo, Po-Hung; Tzeng, Te-Hsuen; Huang, Yi-Chun; Chen, Yu-Hao; Chang, Yi-Chung; Ho, Yi-Lwun; Wu, June-Tai; Lee, Hsiu-Hsian; Lai, Po-Jung; Liu, Kwei-Yan; Cheng, Ya-Chen; Lu, Shey-Shi

    2014-01-01

    Background Drosophila heart tube is a feasible model for cardiac physiological research. However, obtaining Drosophila electrocardiograms (ECGs) is difficult, due to the weak signals and limited contact area to apply electrodes. This paper presents a non-invasive Gallium-Indium (GaIn) based recording system for Drosophila ECG measurement, providing the heart rate and heartbeat features to be observed. This novel, high-signal-quality system prolongs the recording time of insect ECGs, and provides a feasible platform for research on the molecular mechanisms involved in cardiovascular diseases. Methods In this study, two types of electrode, tungsten needle probes and GaIn electrodes, were used respectively to noiselessly conduct invasive and noninvasive ECG recordings of Drosophila. To further analyze electrode properties, circuit models were established and simulated. By using electromagnetic shielded heart signal acquiring system, consisted of analog amplification and digital filtering, the ECG signals of three phenotypes that have different heart functions were recorded without dissection. Results and Discussion The ECG waveforms of different phenotypes of Drosophila recorded invasively and repeatedly with n value (n>5) performed obvious difference in heart rate. In long period ECG recordings, non-invasive method implemented by GaIn electrodes acts relatively stable in both amplitude and period. To analyze GaIn electrode, the correctness of GaIn electrode model established by this paper was validated, presenting accuracy, stability, and reliability. Conclusions Noninvasive ECG recording by GaIn electrodes was presented for recording Drosophila pupae ECG signals within a limited contact area and signal strength. Thus, the observation of ECG changes in normal and SERCA-depleted Drosophila over an extended period is feasible. This method prolongs insect survival time while conserving major ECG features, and provides a platform for electrophysiological signal research

  17. Aluminum battery alloys

    DOEpatents

    Thompson, David S.; Scott, Darwin H.

    1985-01-01

    Aluminum alloys suitable for use as anode structures in electrochemical cs are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

  18. Aluminum battery alloys

    DOEpatents

    Thompson, D.S.; Scott, D.H.

    1984-09-28

    Aluminum alloys suitable for use as anode structures in electrochemical cells are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

  19. Interaction of sodium with tellurium in gallium melts

    SciTech Connect

    Dergacheva, M.B.; Sarsekeeva, R.Zh.; Kozin, L.F.

    1988-09-20

    The purpose of this work was to study interaction of sodium with admixtures of tellurium and to determine the composition and phase state of the intermetallic compounds formed. The investigations were carried out by a potentiometric method with measurement of emf of the concentration cells. Sodium was introduced into the original gallium-tellurium binary alloy by electrolysis. The results of measurements of the emf of the cell were used for plotting potentiometric curves. The emf values found on the horizontal region of the potentiometric were subjected to mathematical analysis for determination of deviations from the regression line of the results of three parallel series of measurement. The emf of concentration cells with a solid electrolyte, based on melts of the gallium-sodium-tellurium ternary system, deviate from the theoretical values at 855 K; this is attributed to formation of the intermetallic compound, sparingly soluble in gallium, the free energy of formation of which is -266 +/- 15 kJ/mole.

  20. Gallium-containing anticancer compounds

    PubMed Central

    Chitambar, Christopher R

    2013-01-01

    There is an ever pressing need to develop new drugs for the treatment of cancer. Gallium nitrate, a group IIIa metal salt, inhibits the proliferation of tumor cells in vitro and in vivo and has shown activity against non-Hodgkin’s lymphoma and bladder cancer in clinical trials. Gallium can function as an iron mimetic and perturb iron-dependent proliferation and other iron-related processes in tumor cells. Gallium nitrate lacks cross resistance with conventional chemotherapeutic drugs and is not myelosuppressive; it can be used when other drugs have failed or when the blood count is low. Given the therapeutic potential of gallium, newer generations of gallium compounds are now in various phases of preclinical and clinical development. These compounds hold the promise of greater anti-tumor activity against a broader spectrum of cancers. The development of gallium compounds for cancer treatment and their mechanisms of action will be discussed. PMID:22800370

  1. Gallium interactions with Zircaloy

    SciTech Connect

    Woods, A.L.; West, M.K.

    1999-01-01

    This study focuses on the effects of gallium ion implantation into zircaloy cladding material to investigate the effects that gallium may have in a reactor. High fluence ion implantation of Ga ions was conducted on heated Zircaloy-4 in the range of 10{sup 16}--10{sup 18} Ga ions/cm2. Surface effects were studied using SEM and electron microprobe analysis. The depth profile of Ga in the Zircaloy was characterized with Rutherford backscattering and SIMS techniques. Results indicate that the Zirc-4 is little affected up to a fluence of 10{sup 17} Ga ions/cm{sup 2}. After implantation of 10{sup 18} Ga ions/cm{sup 2}, sub-grain features on the order of 2 {micro}m were observed which may be due to intermetallic compound formation between Ga and Zr. For the highest fluence implant, Ga content in the Zirc-4 reached a saturation value of between 30 and 40 atomic %; significant enhanced diffusion was observed but gallium was not seen to concentrate at grain boundaries.

  2. Compatibility of ITER candidate materials with static gallium

    SciTech Connect

    Luebbers, P.R.; Chopra, O.K.

    1995-09-01

    Corrosion tests have been conducted to determine the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor (ITER) first wall/blanket systems, e.g., Type 316 stainless steel (SS), Inconel 625, and Nb-5 Mo-1 Zr. The results indicate that Type 316 SS is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400 C, corrosion rates for Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy are {approx} 4.0, 0.5, and 0.03 mm/yr, respectively. Iron, nickel, and chromium react rapidly with gallium. Iron shows greater corrosion than nickel at 400 C ({ge} 88 and 18 mm/yr, respectively). The present study indicates that at temperatures up to 400 C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The growth of intermetallic compounds may control the overall rate of corrosion.

  3. Gallium phosphide energy converters

    NASA Technical Reports Server (NTRS)

    Sims, P. E.; DiNetta, Louis C.; DuganCavanagh, K.; Goetz, M. A.

    1996-01-01

    Betavoltaic power supplies based on gallium phosphide can supply long term low-level power with high reliability. Results are presented for GaP devices powered by Ni-63 and tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/cm(exp 2) have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. A small demonstration system has been assembled that generates and stores enough electricity to light up an LED.

  4. Gallium Arsenide Domino Circuit

    NASA Technical Reports Server (NTRS)

    Yang, Long; Long, Stephen I.

    1990-01-01

    Advantages include reduced power and high speed. Experimental gallium arsenide field-effect-transistor (FET) domino circuit replicated in large numbers for use in dynamic-logic systems. Name of circuit denotes mode of operation, which logic signals propagate from each stage to next when successive stages operated at slightly staggered clock cycles, in manner reminiscent of dominoes falling in a row. Building block of domino circuit includes input, inverter, and level-shifting substages. Combinational logic executed in input substage. During low half of clock cycle, result of logic operation transmitted to following stage.

  5. Gallium nitride nanotube lasers

    SciTech Connect

    Li, Changyi; Liu, Sheng; Hurtado, Antonio; Wright, Jeremy Benjamin; Xu, Huiwen; Luk, Ting Shan; Figiel, Jeffrey J.; Brener, Igal; Brueck, Steven R. J.; Wang, George T.

    2015-01-01

    Lasing is demonstrated from gallium nitride nanotubes fabricated using a two-step top-down technique. By optically pumping, we observed characteristics of lasing: a clear threshold, a narrow spectral, and guided emission from the nanotubes. In addition, annular lasing emission from the GaN nanotube is also observed, indicating that cross-sectional shape control can be employed to manipulate the properties of nanolasers. The nanotube lasers could be of interest for optical nanofluidic applications or application benefitting from a hollow beam shape.

  6. Fabrication of Aluminum Gallium Nitride/Gallium Nitride MESFET And It's Applications in Biosensing

    NASA Astrophysics Data System (ADS)

    Alur, Siddharth

    Gallium Nitride has been researched extensively for the past three decades for its application in Light Emitting Diodes (LED's), power devices and UV photodetectors. With the recent developments in crystal growth technology and the ability to control the doping there has been an increased interest in heterostructures formed between Gallium nitride and it's alloy Aluminium Gallium Nitride. These heterostructures due to the combined effect of spontaneous and piezoelectric effect can form a high density and a high mobility electron gas channel without any intentional doping. This high density electron gas makes these heterostructures ideal to be used as sensors. Gallium Nitride is also chemically very stable. Detection of biomolecules in a fast and reliable manner is very important in the areas of food safety and medical research. For biomolecular detection it is paramount to have a robust binding of the probes on the sensor surface. Therefore, in this dissertation, the fabrication and application of the AlGaN/GaN heterostructures as biological sensors for the detection of DNA and Organophosphate hydrolase enzyme is discussed. In order to use these AlGaN/GaN heterostructures as biological sensors capable of working in a liquid environment photodefinable polydimethyl-siloxane is used as an encapsulant. The immobilization conditions for a robust binding of thiolated DNA and the catalytic receptor enzyme organophosphate hydrolase on gold surfaces is developed with the help of X-ray photoelectron spectroscopy. DNA and OPH are detected by measuring the change in the drain current of the device as a function of time.

  7. Sputtering of tin and gallium-tin clusters

    SciTech Connect

    Lill, T.; Calaway, W.F.; Ma, Z.; Pellin, M.J.

    1994-08-01

    Tin and gallium-tin clusters have been produced by 4 keV Ar{sup +} ion bombardment of polycrystalline tin and the gallium-tin eutectic alloy and analyzed by time-of-flight mass spectrometry. The sputtered neutral species were photoionized with 193 nm (6.4 eV) excimer laser light. Neutral tin clusters containing up to 10 atoms and mixed gallium-tin clusters Ga{sub (n-m)}Sn{sub m} with n {<=} 4 for the neutrals and N {<=} 3 for the sputtered ionic species have been detected. Laser power density dependent intensity measurements, relative yields, and kinetic energy distributions have been measured. The abundance distributions of the mixed clusters have been found to be nonstatistical due to significant differences in the ionization efficiencies for clusters with equal nuclearity but different number of tin atoms. The results indicate that Ga{sub 2}Sn and Ga{sub 3}Sn like the all-gallium clusters have ionization potentials below 6.4 eV. In the case of Sn{sub 5}, Sn{sub 6}, GaSn and Ga{sub (n-m)}Sn{sub m} clusters with n=2 to 4 and m>1, the authors detect species that have sufficient internal energy to be one photon ionized despite ionization potentials that are higher 6.4 eV. The tin atom signal that is detected can be attributed to photofragmentation of dimers for both sputtering from polycrystalline tin and from the gallium-tin eutectic alloy.

  8. Electrospun Gallium Nitride Nanofibers

    SciTech Connect

    Melendez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-04-19

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH{sub 3} flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  9. The interaction of gold with gallium arsenide

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1988-01-01

    Gold and gold-based alloys, commonly used as solar-cell contact materials, are known to react readily with gallium arsenide. Experiments designed to identify the mechanisms involved in these GaAs-metal interactions have yielded several interesting results. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are also explained by invoking this mechanism.

  10. Contact formation in gallium arsenide solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1988-01-01

    Gold and gold-based alloys, commonly used as solar cell contact materials, are known to react readily with gallium arsenide. Experiments were performed to identify the mechanisms involved in these GaAs-metal interactions. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are explained by invoking this mechanism.

  11. Substoichiometric neutron-activation determination of gallium: extraction from HCl with tri-n-octylphosphine oxide in cyclohexane.

    PubMed

    Mitchell, J W; Riley, J E

    1975-07-01

    A highly precise method for the determination of traces of gallium by neutron activation is described. Conditions for the extraction of gallium are reported and general requirements for substoichiometric isolation of cations from HCl with neutral donors are discussed. The mean of determinations of gallium at concentrations of 40 ng ml in a solution prepared by dissolving a standard reference aluminium alloy was 213.9 +/- 1.3 ng. The relative standard deviation and the total error of the method (based on the SRM value) were 0.7 and 10.5% respectively. PMID:18961688

  12. Gallium phosphide energy converters

    NASA Technical Reports Server (NTRS)

    Sims, P. E.; Dinetta, L. C.; Goetz, M. A.

    1995-01-01

    Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

  13. 49 CFR 173.162 - Gallium.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 2 2014-10-01 2014-10-01 false Gallium. 173.162 Section 173.162 Transportation... PACKAGINGS Non-bulk Packaging for Hazardous Materials Other Than Class 1 and Class 7 § 173.162 Gallium. (a) Except when packaged in cylinders or steel flasks, gallium must be packaged in packagings which meet...

  14. 49 CFR 173.162 - Gallium.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 2 2010-10-01 2010-10-01 false Gallium. 173.162 Section 173.162 Transportation... PACKAGINGS Non-bulk Packaging for Hazardous Materials Other Than Class 1 and Class 7 § 173.162 Gallium. (a) Except when packaged in cylinders or steel flasks, gallium must be packaged in packagings which meet...

  15. 49 CFR 173.162 - Gallium.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 2 2011-10-01 2011-10-01 false Gallium. 173.162 Section 173.162 Transportation... PACKAGINGS Non-bulk Packaging for Hazardous Materials Other Than Class 1 and Class 7 § 173.162 Gallium. (a) Except when packaged in cylinders or steel flasks, gallium must be packaged in packagings which meet...

  16. 49 CFR 173.162 - Gallium.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 2 2013-10-01 2013-10-01 false Gallium. 173.162 Section 173.162 Transportation... PACKAGINGS Non-bulk Packaging for Hazardous Materials Other Than Class 1 and Class 7 § 173.162 Gallium. (a) Except when packaged in cylinders or steel flasks, gallium must be packaged in packagings which meet...

  17. 49 CFR 173.162 - Gallium.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 2 2012-10-01 2012-10-01 false Gallium. 173.162 Section 173.162 Transportation... PACKAGINGS Non-bulk Packaging for Hazardous Materials Other Than Class 1 and Class 7 § 173.162 Gallium. (a) Except when packaged in cylinders or steel flasks, gallium must be packaged in packagings which meet...

  18. Mineral resource of the month: gallium

    USGS Publications Warehouse

    Jaskula, Brian

    2009-01-01

    The metal element gallium occurs in very small concentrations in rocks and ores of other metals — native gallium is not known. As society gets more and more high-tech, gallium becomes more useful. Gallium is one of only five metals that are liquid at or close to room temperature. It has one of the longest liquid ranges of any metal (29.8 degrees Celsius to 2204 degrees Celsius) and has a low vapor pressure even at high temperatures. Ultra-pure gallium has a brilliant silvery appearance, and the solid metal exhibits conchoidal fracture similar to glass.

  19. Potential effects of gallium on cladding materials

    SciTech Connect

    Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

    1997-10-01

    This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented.

  20. Liquid gallium rotary electric contract

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J. S.

    1969-01-01

    Due to its low vapor pressure, gallium, when substituted for mercury in a liquid slip ring system, transmits substantial amounts of electrical current to rotating components in an ultrahigh vacuum. It features low electrical loss, little or no wear, and long maintenance-free life.

  1. Gallium scan in intracerebral sarcoidosis

    SciTech Connect

    Makhija, M.C.; Anayiotos, C.P.

    1981-07-01

    Sarcoidosis involving the nervous system probably occurs in about 4% of patients. The usefulness of brain scintigraphy in these cases has been suggested. In this case of cerebral sarcoid granuloma, gallium imaging demonstrated the lesion before treatment and showed disappearance of the lesion after corticosteroid treatment, which correlated with the patient's clinical improvement.

  2. P-type gallium nitride

    DOEpatents

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  3. P-type gallium nitride

    DOEpatents

    Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  4. Gallium nitride electronics

    NASA Astrophysics Data System (ADS)

    Rajan, Siddharth; Jena, Debdeep

    2013-07-01

    In the past two decades, there has been increasing research and industrial activity in the area of gallium nitride (GaN) electronics, stimulated first by the successful demonstration of GaN LEDs. While the promise of wide band gap semiconductors for power electronics was recognized many years before this by one of the contributors to this issue (J Baliga), the success in the area of LEDs acted as a catalyst. It set the field of GaN electronics in motion, and today the technology is improving the performance of several applications including RF cell phone base stations and military radar. GaN could also play a very important role in reducing worldwide energy consumption by enabling high efficiency compact power converters operating at high voltages and lower frequencies. While GaN electronics is a rapidly evolving area with active research worldwide, this special issue provides an opportunity to capture some of the great advances that have been made in the last 15 years. The issue begins with a section on epitaxy and processing, followed by an overview of high-frequency HEMTs, which have been the most commercially successful application of III-nitride electronics to date. This is followed by review and research articles on power-switching transistors, which are currently of great interest to the III-nitride community. A section of this issue is devoted to the reliability of III-nitride devices, an area that is of increasing significance as the research focus has moved from not just high performance but also production-worthiness and long-term usage of these devices. Finally, a group of papers on new and relatively less studied ideas for III-nitride electronics, such as interband tunneling, heterojunction bipolar transistors, and high-temperature electronics is included. These areas point to new areas of research and technological innovation going beyond the state of the art into the future. We hope that the breadth and quality of articles in this issue will make it

  5. Lewis-Acid/Base Effects on Gallium Volatility in Molten Chlorides

    SciTech Connect

    Williams, D.F.

    2001-02-26

    It has been proposed that GaCl{sub 3} can be removed by direct volatilization from a Pu-Ga alloy that is dissolved in a molten chloride salt. Although pure GaCl{sub 3} is quite volatile (boiling point, 201 C), the behavior of GaCl{sub 3} dissolved in chloride salts is different due to solution effects and is critically dependent on the composition of the solvent salt (i.e., its Lewis-acid/base character). In this report, the behavior of gallium in prototypical Lewis-acid and Lewis-base salts is compared. It was found that gallium volatility is suppressed in basic melts and enhanced in acidic melts. The implications of these results on the potential for simple gallium removal in molten salt systems are significant.

  6. A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials

    NASA Technical Reports Server (NTRS)

    Hurley, John S.

    1990-01-01

    Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.

  7. In vitro bio-functionality of gallium nitride sensors for radiation biophysics.

    PubMed

    Hofstetter, Markus; Howgate, John; Schmid, Martin; Schoell, Sebastian; Sachsenhauser, Matthias; Adigüzel, Denis; Stutzmann, Martin; Sharp, Ian D; Thalhammer, Stefan

    2012-07-27

    There is an increasing interest in the integration of hybrid bio-semiconductor systems for the non-invasive evaluation of physiological parameters. High quality gallium nitride and its alloys show promising characteristics to monitor cellular parameters. Nevertheless, such applications not only request appropriate sensing capabilities but also the biocompatibility and especially the biofunctionality of materials. Here we show extensive biocompatibility studies of gallium nitride and, for the first time, a biofunctionality assay using ionizing radiation. Analytical sensor devices are used in medical settings, as well as for cell- and tissue engineering. Within these fields, semiconductor devices have increasingly been applied for online biosensing on a cellular and tissue level. Integration of advanced materials such as gallium nitride into these systems has the potential to increase the range of applicability for a multitude of test devices and greatly enhance sensitivity and functionality. However, for such applications it is necessary to optimize cell-surface interactions and to verify the biocompatibility of the semiconductor. In this work, we present studies of mouse fibroblast cell activity grown on gallium nitride surfaces after applying external noxa. Cell-semiconductor hybrids were irradiated with X-rays at air kerma doses up to 250 mGy and the DNA repair dynamics, cell proliferation, and cell growth dynamics of adherent cells were compared to control samples. The impact of ionizing radiation on DNA, along with the associated cellular repair mechanisms, is well characterized and serves as a reference tool for evaluation of substrate effects. The results indicate that gallium nitride does not require specific surface treatments to ensure biocompatibility and suggest that cell signaling is not affected by micro-environmental alterations arising from gallium nitride-cell interactions. The observation that gallium nitride provides no bio-functional influence on

  8. Epitaxial Deposition Of Germanium Doped With Gallium

    NASA Technical Reports Server (NTRS)

    Huffman, James E.

    1994-01-01

    Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

  9. Tuberculosis peritonitis: gallium-67 scintigraphic appearance.

    PubMed

    Sumi, Y; Ozaki, Y; Hasegawa, H; Shindoh, N; Katayama, H; Tamamoto, F

    1999-06-01

    Tuberculosis peritonitis is a rare manifestation of extrapulmonary tuberculosis. The results of gallium-67 scintigraphy of three patients with tuberculosis peritonitis were reviewed to assess its usefulness in the diagnosis of this condition. Tuberculosis peritonitis was associated with diffuse or focal abdominal localization and decreased hepatic accumulation of gallium-67. These gallium-67 scan features of tuberculosis peritonitis may help to optimize the diagnosis and management of this disease. PMID:10435380

  10. Thermal oxidation of gallium arsenide

    SciTech Connect

    Monteiro, O.R.; Evans, J.W.

    1989-01-01

    Here we present some results of transmission electron microscopy and secondary ion mass spectroscopy of thermally oxidized gallium arsenide with different types of dopants. At temperatures below 400 /sup 0/C an amorphous oxide is formed. Oxidation at temperatures between 500 and 600 /sup 0/C initially produces an epitaxial film of ..gamma..-Ga/sub 2/O/sub 3/. As the reaction proceeds, this film becomes polycrystalline and then transforms to ..beta..-Ga/sub 2/O/sub 3/. This film contains small crystallites of As/sub 2/O/sub 5/ and As/sub 2/O/sub 3/ in the case of the chromium doped samples, whereas only the former was detected in the case of silicon and tellurium doped samples. Elemental arsenic was always found at the interface between the oxide and GaAs. Chromium doped gallium also exhibited a slower oxidation kinetics than the other materials.

  11. Recovering gallium from residual bayer process liquor

    NASA Astrophysics Data System (ADS)

    Afonso de Magalhães, Maria Elizabeth; Tubino, Matthieu

    1991-06-01

    Gallium is normally obtained by direct electrolysis as a by-product from Bayer process residual liquor at an aluminum processing plant. However, to permit any net accumulation of the metal, the gallium concentration must be at least about 0.3 g/l in the liquor. This article describes a continuous process of extraction with organic solvents and rhodamine-B, followed by a re-extraction step into aqueous media. The final product is a solid containing up to 18 wt.% Ga in a solid mixture of hydroxides and oxides of gallium and aluminum. This final product can then be electrolyzed to recover the gallium more efficiently.

  12. Decreased gallium uptake in acute hematogenous osteomyelitis

    SciTech Connect

    Ang, J.G.; Gelfand, M.J.

    1983-07-01

    Decreased radiopharmaceutical uptake was noted on both bone and gallium scans in the case of acute hematogenous osteomyelitis of the right ilium (acetabular roof). This combination of findings is probably rare. The mechanism of decreased gallium uptake is unknown, but may be related to decreased blood flow.

  13. Gallium Electromagnetic (GEM) Thrustor Concept and Design

    NASA Technical Reports Server (NTRS)

    Polzin, Kurt A.; Markusic, Thomas E.

    2006-01-01

    We describe the design of a new type of two-stage pulsed electromagnetic accelerator, the gallium electromagnetic (GEM) thruster. A schematic illustration of the GEM thruster concept is given in Fig. 1. In this concept, liquid gallium propellant is pumped into the first stage through a porous metal electrode using an electromagneticpump[l]. At a designated time, a pulsed discharge (approx.10-50 J) is initiated in the first stage, ablating the liquid gallium from the porous electrode surface and ejecting a dense thermal gallium plasma into the second state. The presence of the gallium plasma in the second stage serves to trigger the high-energy (approx.500 I), send-stage puke which provides the primary electromagnetic (j x B) acceleration.

  14. Myocardial gallium-67 imaging in dilated cardiomyopathy

    PubMed Central

    O'Connell, John B.; Henkin, Robert E.

    1985-01-01

    The use of gallium-67, an isotope that is avid for areas of inflammation in patients with dilated cardiomyopathy, is described and compared with endomyocardial biopsy in 68 consecutive patients with dilated cardiomyopathy. Myocarditis was diagnosed in 8% on biopsy and the likelihood of a positive biopsy when the gallium scan was positive for inflammation, rose to 36%. It is concluded that gallium scanning is a useful adjunct to biopsy in detecting myocarditis in patients with dilated cardiomyopathy and in following patients with evidence of myocarditis on biopsy. Disadvantages of gallium-67 imaging include the radiation dose accumulated with multiple scans and 72h delay from initial injection of the isotope to imaging. It is suggested that definitive conclusions regarding the technique should await the results of a large multicentre trial evaluating gallium in comparison with endomyocardial biopsy in the diagnosis of myocarditis. ImagesFigure 1Figure 2

  15. Processing to obtain high-purity gallium

    NASA Astrophysics Data System (ADS)

    Bautista, Renato G.

    2003-03-01

    Gallium has become increasingly popular as a substrate material for electronic devices. Aside from ore, gallium can be obtained from such industrial sources as the Bayer process caustic liquor that is a byproduct of bauxite processing, flue dust removed from the fume-collection system in plants that produce aluminum by the electrolytic process, zinc refinery residues, gallium scrap materials, and coal fly ash. The purification process for gallium can start with solvent-extraction processes where the concentrations of impurities, especially metals, are reduced to the ppm range. This article describes how ultra-purification techniques can be employed to reduce the undesirable impurities to the low ppb range. The various procedures described give an idea as to the extent of work needed to obtain and prepare high-purity gallium for electronic application.

  16. Electrospun Gallium Nitride Nanofibers (abstract)

    NASA Astrophysics Data System (ADS)

    Meléndez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-04-01

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH3 flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  17. Status of gallium-67 in tumor detector

    SciTech Connect

    Hoffer, P.

    1980-04-01

    The efficacy of gallium-67 citrate in detecting specific tumors is discussed. Tumors in which gallium-67 imaging is useful as a diagnostic tool include Hodgkin's disease, histiocystic lymphoma, Burkitt's lymphoma, hepatoma melanoma, and leukemia. It has not been found to be effective in diagnosing head and neck tumors, gastrointestinal tumors, genitourinary tract tumors, breast tumors, and pediatric tumors. Gallium may be useful in the evaluation of non-Hodgkin's lymphoma, testicular carcinoma, mesothelioma, and carcinoma of the lung. It may also be useful for determining response to treatment and prognosis in some neoplasms.

  18. The surface tension of liquid gallium

    NASA Technical Reports Server (NTRS)

    Hardy, S. C.

    1985-01-01

    The surface tension of liquid gallium has been measured using the sessile drop technique in an Auger spectrometer. The experimental method is described. The surface tension in mJ/sq m is found to decrease linearly with increasing temperature and may be represented as 708-0.66(T-29.8), where T is the temperature in centigrade. This result is of interest because gallium has been suggested as a model fluid for Marangoni flow experiments. In addition, the surface tension is of technological significance in the processing of compound semiconductors involving gallium.

  19. In vitro bio-functionality of gallium nitride sensors for radiation biophysics

    SciTech Connect

    Hofstetter, Markus; Howgate, John; Schmid, Martin; Schoell, Sebastian; Sachsenhauser, Matthias; Adiguezel, Denis; Stutzmann, Martin; Sharp, Ian D.; Thalhammer, Stefan

    2012-07-27

    Highlights: Black-Right-Pointing-Pointer Gallium nitride based sensors show promising characteristics to monitor cellular parameters. Black-Right-Pointing-Pointer Cell growth experiments reveal excellent biocompatibiltiy of the host GaN material. Black-Right-Pointing-Pointer We present a biofunctionality assay using ionizing radiation. Black-Right-Pointing-Pointer DNA repair is utilized to evaluate material induced alterations in the cellular behavior. Black-Right-Pointing-Pointer GaN shows no bio-functional influence on the cellular environment. -- Abstract: There is an increasing interest in the integration of hybrid bio-semiconductor systems for the non-invasive evaluation of physiological parameters. High quality gallium nitride and its alloys show promising characteristics to monitor cellular parameters. Nevertheless, such applications not only request appropriate sensing capabilities but also the biocompatibility and especially the biofunctionality of materials. Here we show extensive biocompatibility studies of gallium nitride and, for the first time, a biofunctionality assay using ionizing radiation. Analytical sensor devices are used in medical settings, as well as for cell- and tissue engineering. Within these fields, semiconductor devices have increasingly been applied for online biosensing on a cellular and tissue level. Integration of advanced materials such as gallium nitride into these systems has the potential to increase the range of applicability for a multitude of test devices and greatly enhance sensitivity and functionality. However, for such applications it is necessary to optimize cell-surface interactions and to verify the biocompatibility of the semiconductor. In this work, we present studies of mouse fibroblast cell activity grown on gallium nitride surfaces after applying external noxa. Cell-semiconductor hybrids were irradiated with X-rays at air kerma doses up to 250 mGy and the DNA repair dynamics, cell proliferation, and cell growth

  20. Gallium and its competing roles with iron in biological systems.

    PubMed

    Chitambar, Christopher R

    2016-08-01

    Gallium, a group IIIa metal, shares chemical properties with iron. Studies have shown that gallium-based compounds have potential therapeutic activity against certain cancers and infectious microorganisms. By functioning as an iron mimetic, gallium perturbs iron-dependent proliferation processes in tumor cells. Gallium's action on iron homeostasis leads to disruption of ribonucleotide reductase, mitochondrial function, and the regulation of transferrin receptor and ferritin. In addition, gallium nitrate stimulates an increase in mitochondrial reactive oxygen species in cells which triggers downstream upregulation of metallothionein and hemoxygenase-1. Gallium's anti-infective activity against bacteria and fungi results from disruption of microbial iron utilization through mechanisms which include gallium binding to siderophores and downregulation of bacterial iron uptake. Gallium compounds lack cross-resistance to conventional chemotherapeutic drugs and antibiotics thus making them attractive agents for drug development. This review will focus on the mechanisms of action of gallium with emphasis on its interaction with iron and iron proteins. PMID:27150508

  1. Gallium-67 activity in bronchoalveolar lavage fluid in sarcoidosis

    SciTech Connect

    Trauth, H.A.; Heimes, K.; Schubotz, R.; von Wichert, P.

    1986-01-01

    Roentgenograms and gallium-67 scans and gallium-67 counts of BAL fluid samples, together with differential cell counts, have proved to be useful in assessing activity and lung involvement in sarcoidosis. In active pulmonary sarcoidosis gallium-67 scans are usually positive. Quantitation of gallium-67 uptake in lung scans, however, may be difficult. Because gallium-67 uptake and cell counts in BAL fluid may be correlated, we set out to investigate gallium-67 activity in BAL fluid recovered from patient of different groups. Sixteen patients with recently diagnosed and untreated sarcoidosis, nine patients with healthy lungs, and five patients with CFA were studied. Gallium-67 uptake of the lung, gallium-67 activity in the lavage fluid, SACE and LACE levels, and alpha 1-AT activity were measured. Significantly more gallium-67 activity was found in BAL fluid from sarcoidosis patients than in that from CFA patients (alpha = .001) or patients with healthy lungs (alpha = .001). Gallium-67 activity in BAL fluid could be well correlated with the number of lymphocytes in BAL fluid, but poorly with the number of macrophages. Subjects with increased levels of SACE or serum alpha 1-AT showed higher lavage gallium-67 activity than did normals, but no correlation could be established. High gallium-67 activity in lavage fluid may be correlated with acute sarcoidosis or physiological deterioration; low activity denotes change for the better. The results show that gallium-67 counts in BAL fluid reflects the intensity of gallium-67 uptake and thus of activity of pulmonary sarcoidosis.

  2. Radiochemical separation of gallium by amalgam exchange

    USGS Publications Warehouse

    Ruch, R.R.

    1969-01-01

    An amalgam-exchange separation of radioactive gallium from a number of interfering radioisotopes has been developed. A dilute (ca. 0.3%) gallium amalgam is agitated with a slightly acidic solution of 72Ga3+ containing concentrations of sodium thiocyanate and either perchlorate or chloride. The amalgam is then removed and the radioactive gallium stripped by agitation with dilute nitric acid. The combined exchange yield of the perchlorate-thiocyanate system is 90??4% and that of the chloride-thiocyanate system is 75??4%. Decontamination yields of most of the 11 interfering isotopes studied were less than 0.02%. The technique is applicable for use with activation analysis for the determination of trace amounts of gallium. ?? 1969.

  3. NIM Realization of the Gallium Triple Point

    NASA Astrophysics Data System (ADS)

    Xiaoke, Yan; Ping, Qiu; Yuning, Duan; Yongmei, Qu

    2003-09-01

    In the last three years (1999 to 2001), the gallium triple-point cell has been successfully developed, and much corresponding research has been carried out at the National Institute of Metrology (NIM), Beijing, China. This paper presents the cell design, apparatus and procedure for realizing the gallium triple point, and presents studies on the different freezing methods. The reproducibility is 0.03 mK, and the expanded uncertainty of realization of the gallium triple point is evaluated to be 0.17 mK (p=0.99, k=2.9). Also, the reproducibility of the gallium triple point was compared with that of the triple point of water.

  4. Recovery of gallium from aluminum industry residues

    SciTech Connect

    Carvalho, M.S.; Neto, K.C.M.; Nobrega, A.W.; Medeiros, J.A.

    2000-01-01

    A procedure is proposed to recover gallium from flue dust aluminum residues produced in plants by using solid-phase extraction with a commercial polyether-type polyurethane foam (PUF). Gallium can be separated from high concentrations of aluminum, iron, nickel, titanium, vanadium, copper, zinc, sulfate, fluoride, and chloride by extraction with PUF from 3 M sulfuric acid and 3 M sodium chloride concentration medium with at least a 92% efficiency. Gallium backextraction was fast and quantitative with ethanol solution. In all recovery steps commercial-grade reagents could be used, including tap water. The recovered gallium was precipitated with sodium hydroxide solution, purified by dissolution and precipitation, calcinated, and the final oxide was 98.6% pure.

  5. Development of gallium arsenide solar cells

    NASA Technical Reports Server (NTRS)

    1973-01-01

    The potential of ion implantation as a means of developing gallium arsenide solar cells with high efficiency performance was investigated. Computer calculations on gallium arsenide cell characteristics are presented to show the effects of surface recombination, junction space-charge recombination, and built-in fields produced by nonuniform doping of the surface region. The fabrication technology is summarized. Electrical and optical measurements on samples of solar cells are included.

  6. Generator for gallium-68 and compositions obtained therefrom

    DOEpatents

    Neirinckx, Rudi D.; Davis, Michael A.

    1981-01-01

    A generator for obtaining radioactive gallium-68 from germanium-68 bound in a resin containing unsubstituted phenolic hydroxyl groups. The germanium-68 is loaded into the resin from an aqueous solution of the germanium-68. A physiologically acceptable solution of gallium-68 having an activity of 0.1 to 50 millicuries per milliliter of gallium-68 solution is obtained. The solution is obtained from the bound germanium-68 which forms gallium-68 in situ by eluting the column with a hydrochloric acid solution to form an acidic solution of gallium-68. The acidic solution of gallium-68 can be neutralized.

  7. Window structure for passivating solar cells based on gallium arsenide

    NASA Technical Reports Server (NTRS)

    Barnett, Allen M. (Inventor)

    1985-01-01

    Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

  8. Controlled Electrochemical Deformation of Liquid-Phase Gallium.

    PubMed

    Chrimes, Adam F; Berean, Kyle J; Mitchell, Arnan; Rosengarten, Gary; Kalantar-zadeh, Kourosh

    2016-02-17

    Pure gallium is a soft metal with a low temperature melting point of 29.8 °C. This low melting temperature can potentially be employed for creating optical components with changeable configurations on demand by manipulating gallium in its liquid state. Gallium is a smooth and highly reflective metal that can be readily maneuvered using electric fields. These features allow gallium to be used as a reconfigurable optical reflector. This work demonstrates the use of gallium for creating reconfigurable optical reflectors manipulated through the use of electric fields when gallium is in a liquid state. The use of gallium allows the formed structures to be frozen and preserved as long as the temperature of the metal remains below its melting temperature. The lens can be readily reshaped by raising the temperature above the melting point and reapplying an electric field to produce a different curvature of the gallium reflector. PMID:26820807

  9. The solubility of hydrogen and deuterium in alloyed, unalloyed and impure plutonium metal

    SciTech Connect

    Richmond, Scott; Bridgewater, Jon S; Ward, John W; Allen, Thomas A

    2009-01-01

    Pressure-Composition-Temperature (PCT) data are presented for the plutonium-hydrogen (Pu-H) and plutonium-deuterium (Pu-D) systems in the solubility region up to terminal solubility (precipitation of PuH{sub 2}). The heats of solution for PuH{sub s} and PuD{sub s} are determined from PCT data in the ranges 350-625 C for gallium alloyed Pu and 400-575 C for unalloyed Pu. The solubility of high purity plutonium alloyed with 2 at.% gallium is compared to high purity unalloyed plutonium. Significant differences are found in hydrogen solubility for unalloyed Pu versus gallium alloyed Pu. Differences in hydrogen solubility due to an apparent phase change are observable in the alloyed and unalloyed solubilities. The effect of iron impurities on Pu-Ga alloyed Pu is shown via hydrogen solubility data as preventing complete homogenization.

  10. Metal Insulator Semiconductor Structures on Gallium Arsenide.

    NASA Astrophysics Data System (ADS)

    Connor, Sean Denis

    Available from UMI in association with The British Library. The compound semiconductor gallium arsenide and its associated aluminium alloys have been the subject of intensive research in recent years. These materials offer the advantage of high electron mobilities coupled with the ability to be 'barrier engineered' leading to high injection efficiencies in bipolar devices. From a technological viewpoint however these materials are difficult to work with and device realisation is a major problem. Both thermal and anodic oxidation of these materials fail to produce a dielectric of sufficient quality for device applications and as a result devices tend to be complex non planar, mesa structures. A technique is proposed whereby the electrical interface is separated from the dielectric by means of a thin layer of AlGaAs, carrier confinement in the active GaAs region being maintained by the potential barriers to holes and electrons formed by the GaAs-AlGaAs junction. The integrity of these barriers is maintained by the provision of a suitable 'capping' dielectric. The electrical characteristics of various dielectric systems on GaAs have been investigated by means of current -voltage, capacitance-voltage and electronic breakdown measurements. Transport mechanisms for leakage current through these systems are identified and the interface properties (viz Fermi level pinning etc.) assessed by means of a direct comparison between experimental capacitance-voltage curves and theoretical data obtained from classical theory. As a technique for producing a convenient, in house 'capping' dielectric with good electrical and mechanical properties, the plasma anodisation of deposited aluminium films has been investigated. The anodisation parameters have been optimised for oxidation of these films in a microwave sustained oxygen plasma to give alumina films of around 500 A. A qualitative model for the anodisation process, involving linear and parabolic growth kinetics is proposed and

  11. Magnetohydrodynamic convection in liquid gallium.

    NASA Astrophysics Data System (ADS)

    Juel, Anne; Mullin, Tom

    1996-11-01

    Results are presented from a study of convective flow of liquid gallium confined in a rectangular cavity of length/depth ratio 4, subject to a horizontal temperature gradient. The origin of the problem lies in the area of crystal growth, where it is known that the dynamics of the fluid flow in semiconductor geometries are of vital importance in determining the quality of the crystal. Application of a magnetic field, for instance, damps out the time-dependent convection in the liquid phase that creates striations in the crystal and reduces its quality. Prior to the study of dynamical phenomena, the nature of the steady flow is investigated. In the absence of a magnetic field, a direct comparison between experimental results, the Hadley cell model and two and three-dimensional numerical simulations clearly shows that the flow is three-dimensional in nature. The effect of a uniform transverse magnetic field is then examined. Direct comparison between experimental results and three dimensional simulations shows identical damping of the convective circulation. Numerically, it is found that the magnetic field restricts the flow to 2d motion. Experimentally, this is confirmed from the measurement of isotherms. Hence, the detailed knowledge of the steady flow provides us with a robust basis for studies of time dependent behaviour.

  12. Single gallium nitride nanowire lasers.

    PubMed

    Johnson, Justin C; Choi, Heon-Jin; Knutsen, Kelly P; Schaller, Richard D; Yang, Peidong; Saykally, Richard J

    2002-10-01

    There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasersand nonlinear optical frequency converters. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet-blue light-emitting diodes, lasers and photodetectors. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films. Here we report the observation of ultraviolet-blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry-Perot modes (Q approximately 10(3)) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV microJ x cm(-2)) supports the idea that the electron-hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet-blue coherent light sources. PMID:12618824

  13. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  14. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  15. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  16. Phase Change of Gallium Enables Highly Reversible and Switchable Adhesion.

    PubMed

    Ye, Zhou; Lum, Guo Zhan; Song, Sukho; Rich, Steven; Sitti, Metin

    2016-07-01

    Gallium exhibits highly reversible and switchable adhesion when it undergoes a solid-liquid phase transition. The robustness of gallium is notable as it exhibits strong performance on a wide range of smooth and rough surfaces, under both dry and wet conditions. Gallium may therefore find numerous applications in transfer printing, robotics, electronic packaging, and biomedicine. PMID:27146217

  17. Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control.

    PubMed

    Sarkar, Sujoy; Sampath, S

    2016-05-11

    A ternary, ionically conducting, deep eutectic solvent based on acetamide, urea and gallium nitrate is reported for the electrodeposition of gallium nitride/gallium indium nitride under ambient conditions; blue and white light emitting photoluminescent deposits are obtained under potential control. PMID:27074315

  18. Radiation damage of gallium arsenide production cells

    NASA Technical Reports Server (NTRS)

    Mardesich, N.; Joslin, D.; Garlick, J.; Lillington, D.; Gillanders, M.; Cavicchi, B.; Scott-Monck, J.; Kachare, R.; Anspaugh, B.

    1987-01-01

    High efficiency liquid phase epitaxy (LPE) gallium arsenide cells were irradiated with 1 Mev electrons up to fluences of 1 times 10 to the 16th power cm-2. Measurements of spectral response and dark and illuminated I-V data were made at each fluence and then, using computer codes, the experimental data was fitted to gallium arsenide cell models. In this way it was possible to determine the extent of the damage, and hence damage coefficients in both the emitter and base of the cell.

  19. /sup 67/Gallium lung scans in progressive systemic sclerosis

    SciTech Connect

    Baron, M.; Feiglin, D.; Hyland, R.; Urowitz, M.B.; Shiff, B.

    1983-08-01

    /sup 67/Gallium lung scans were performed in 19 patients with progressive systemic sclerosis (scleroderma). Results were expressed quantitatively as the /sup 67/Gallium Uptake Index. The mean total pulmonary /sup 67/Gallium Uptake Index in patients was significantly higher than that in controls (41 versus 25), and 4 patients (21%) fell outside the normal range. There were no clinical or laboratory variables that correlated with the /sup 56/Gallium uptake. Increased pulmonary /sup 67/Gallium uptake in scleroderma may prove useful as an index of pulmonary disease activity.

  20. Four Terminal Gallium Nitride MOSFETs

    NASA Astrophysics Data System (ADS)

    Veety, Matthew Thomas

    All reported gallium nitride (GaN) transistors to date have been three-terminal devices with source, drain, and gate electrodes. In the case of GaN MOSFETs, this leaves the bulk of the device at a floating potential which can impact device threshold voltage. In more traditional silicon-based MOSFET fabrication a bulk contact can be made on the back side of the silicon wafer. For GaN grown on sapphire substrates, however, this is not possible and an alternate, front-side bulk contact must be investigated. GaN is a III-V, wide band gap semiconductor that as promising material parameters for use in high frequency and high power applications. Possible applications are in the 1 to 10 GHz frequency band and power inverters for next generation grid solid state transformers and inverters. GaN has seen significant academic and commercial research for use in Heterojunction Field Effect Transistors (HFETs). These devices however are depletion-mode, meaning the device is considered "on" at zero gate bias. A MOSFET structure allows for enhancement mode operation, which is normally off. This mode is preferrable in high power applications as the device has lower off-state power consumption and is easier to implement in circuits. Proper surface passivation of seminconductor surface interface states is an important processing step for any device. Preliminary research on surface treatments using GaN wet etches and depletion-mode GaN devices utilizing this process are discussed. Devices pretreated with potassium pursulfate prior to gate dielectric deposition show significant device improvements. This process can be applied to any current GaN FET. Enhancement-mode GaN MOSFETs were fabricated on magnesium doped p-type Wurtzite gallium nitride grown by Metal Organic Chemical Vapor Deposition (MOCVD) on c-plane sapphire substrates. Devices utilized ion implant source and drain which was activated under NH3 overpressure in MOCVD. Also, devices were fabricated with a SiO2 gate dielectric

  1. Quantitative chemical analysis of nickel-chromium dental casting alloys.

    PubMed

    Nagayama, K; Kuroiwa, A; Ando, Y; Hashimoto, H

    1990-01-01

    Twenty-nine brands of dental casting nickel-chromium alloys made in Japan for small castings were analyzed by electron probe X-ray microanalyzer. Nickel-chromium alloys for metal-ceramic application were composed primarily of nickel, chromium, and molybdenum with the exception of one brand. Of the nickel-chromium alloys for inlay, crown, and bridgework applications, 11 of the 22 alloys were up to the standard of the Ministry of Welfare specifications. And additive metal elements of these alloys were molybdenum, iron, copper, manganese, aluminum, silicon, tin, indium, silver, titanium, and gallium. PMID:2134288

  2. Gallium nitride-based micro-opto-electro-mechanical systems

    NASA Astrophysics Data System (ADS)

    Stonas, Andreas Robert

    Gallium Nitride and its associated alloys InGaN and AlGaN have many material properties that are highly desirable for micro-electro-mechanical systems (MEMS), and more specifically micro-opto-electro-mechanical systems (MOEMS). The group III-nitrides are tough, stiff, optically transparent, direct bandgap, chemically inert, highly piezoelectric, and capable of functioning at high temperatures. There is currently no other semiconductor system that possesses all of these properties. Taken together, these attributes make the nitrides prime candidates not only for creating new versions of existing device structures, but also for creating entirely unique devices which combine these properties in novel ways. Unfortunately, their chemical resiliency also makes the group III-nitrides extraordinarily difficult to shape into devices. In particular, until this research, no undercut etch technology existed that could controllably separate a selected part of a MEMS device from its sapphire or silicon carbide substrate. This has effectively prevented GaN-based MEMS from being developed. This dissertation describes how this fabrication obstacle was overcome by a novel etching geometry (bandgap-selective backside-illuminated photoelectochemical (BS-BIPEC) etching) and its resulting morphologies. Several gallium-nitride based MEMS devices were created, actuated, and modelled, including cantilevers and membranes. We describe in particular our pursuit of one of the many novel device elements that is possible only in this material system: a transducer that uses an externally applied strain to dynamically change the optical transition energy of a quantum well. While the device objective of a dynamically tunable quantum well was not achieved, we have demonstrated sufficient progress to believe that such a device will be possible soon. We have observed a shift (5.5meV) of quantum well transition energies in released structures, and we have created structures that can apply large biaxial

  3. Long-chain amine-templated synthesis of gallium sulfide and gallium selenide nanotubes

    NASA Astrophysics Data System (ADS)

    Seral-Ascaso, A.; Metel, S.; Pokle, A.; Backes, C.; Zhang, C. J.; Nerl, H. C.; Rode, K.; Berner, N. C.; Downing, C.; McEvoy, N.; Muñoz, E.; Harvey, A.; Gholamvand, Z.; Duesberg, G. S.; Coleman, J. N.; Nicolosi, V.

    2016-06-01

    We describe the soft chemistry synthesis of amine-templated gallium chalcogenide nanotubes through the reaction of gallium(iii) acetylacetonate and the chalcogen (sulfur, selenium) using a mixture of long-chain amines (hexadecylamine and dodecylamine) as a solvent. Beyond their role as solvent, the amines also act as a template, directing the growth of discrete units with a one-dimensional multilayer tubular nanostructure. These new materials, which broaden the family of amine-stabilized gallium chalcogenides, can be tentatively classified as direct large band gap semiconductors. Their preliminary performance as active material for electrodes in lithium ion batteries has also been tested, demonstrating great potential in energy storage field even without optimization.We describe the soft chemistry synthesis of amine-templated gallium chalcogenide nanotubes through the reaction of gallium(iii) acetylacetonate and the chalcogen (sulfur, selenium) using a mixture of long-chain amines (hexadecylamine and dodecylamine) as a solvent. Beyond their role as solvent, the amines also act as a template, directing the growth of discrete units with a one-dimensional multilayer tubular nanostructure. These new materials, which broaden the family of amine-stabilized gallium chalcogenides, can be tentatively classified as direct large band gap semiconductors. Their preliminary performance as active material for electrodes in lithium ion batteries has also been tested, demonstrating great potential in energy storage field even without optimization. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01663d

  4. In-situ Observation of Surface Graphitization of Gallium Droplet and Concentration of Carbon in Liquid Gallium

    NASA Astrophysics Data System (ADS)

    Ueki, Ryuichi; Nishijima, Takuya; Hikata, Takeshi; Ookubo, Soichiro; Utsunomiya, Risa; Matsuba, Teruaki; Fujita, Jun-ichi

    2012-06-01

    Although carbon has been recognized to be insoluble in gallium, we found that the outermost surface of gallium has unexpectedly high carbon solubility, particularly the limited region of about a few nanometers in depth. Our in-situ transmission electron microscope observations revealed that a graphene layer was precipitated at the surface of a gallium droplet simultaneously with gallium evaporation, and some of the droplets created an internal graphitic layer. On the basis of these experimental data, we evaluated a substantial carbon solubility that seemed to exceed about 50 at. %, but was realized in a very thin surface region of about 4 nm in depth. We believe that this high carbon solubility at the gallium surface is the key mechanism for the catalytic ability of gallium that was observed at the interface between liquid gallium and solid amorphous carbon.

  5. Gallium Nitride Crystals: Novel Supercapacitor Electrode Materials.

    PubMed

    Wang, Shouzhi; Zhang, Lei; Sun, Changlong; Shao, Yongliang; Wu, Yongzhong; Lv, Jiaxin; Hao, Xiaopeng

    2016-05-01

    A type of single-crystal gallium nitride mesoporous membrane is fabricated and its supercapacitor properties are demonstrated for the first time. The supercapacitors exhibit high-rate capability, stable cycling life at high rates, and ultrahigh power density. This study may expand the range of crystals as high-performance electrode materials in the field of energy storage. PMID:27007502

  6. Gallium Electromagnetic (GEM) Thruster Performance Measurements

    NASA Technical Reports Server (NTRS)

    Thomas, Robert E.; Burton, Rodney L.; Polzin, K. A.

    2009-01-01

    Discharge current, terminal voltage, and mass bit measurements are performed on a coaxial gallium electromagnetic thruster at discharge currents in the range of 7-23 kA. It is found that the mass bit varies quadratically with the discharge current which yields a constant exhaust velocity of 20 km/s. Increasing the electrode radius ratio of the thruster from to 2.6 to 3.4 increases the thruster efficiency from 21% to 30%. When operating with a central gallium anode, macroparticles are ejected at all energy levels tested. A central gallium cathode ejects macroparticles when the current density exceeds 3.7 10(exp 8) A/square m . A spatially and temporally broad spectroscopic survey in the 220-520 nm range is used to determine which species are present in the plasma. The spectra show that neutral, singly, and doubly ionized gallium species are present in the discharge, as well as annular electrode species at higher energy levels. Axial Langmuir triple probe measurements yield electron temperatures in the range of 0.8-3.8 eV and electron densities in the range of 8 x 10(exp )20 to 1.6 x 10(exp 21) m(exp -3) . Triple probe measurements suggest an exhaust plume with a divergence angle of 9 , and a completely doubly ionized plasma at the ablating thruster cathode.

  7. Extrapulmonary localization of gallium in sarcoidosis

    SciTech Connect

    Rohatgi, P.K.; Singh, R.; Vieras, F.

    1987-01-01

    This paper describes the spectrum of extrapulmonary localization of gallium in patients with sarcoidosis. The usefulness of Ga-67 scintiscans in detecting clinically occult lesions, in directing clinicians to accessible sites for biopsy, and in following the course of extrapulmonary sites of involvement with therapy is emphasized.

  8. Solar cell with a gallium nitride electrode

    DOEpatents

    Pankove, Jacques I.

    1979-01-01

    A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

  9. Gallium-positive Lyme disease myocarditis

    SciTech Connect

    Alpert, L.I.; Welch, P.; Fisher, N.

    1985-09-01

    In the course of a work-up for fever of unknown origin associated with intermittent arrhythmias, a gallium scan was performed which revealed diffuse myocardial uptake. The diagnosis of Lyme disease myocarditis subsequently was confirmed by serologic titers. One month following recovery from the acute illness, the abnormal myocardial uptake completely resolved.

  10. Gallium nitride junction field-effect transistor

    DOEpatents

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  11. Gallium nitride junction field-effect transistor

    DOEpatents

    Zolper, John C.; Shul, Randy J.

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  12. Anisotropy of the magnetic susceptibility of gallium

    USGS Publications Warehouse

    Pankey, T., Jr.

    1960-01-01

    The bulk magnetic susceptibilities of single gallium crystals and polycrystalline gallium spheres were measured at 25??C. The following anisotropic diamagnetic susceptibilities were found: a axis (-0.119??0. 001)??10-6 emu/g, b axis (-0.416??0.002)??10 -6 emu/g, and c axis (-0.229??0.001) emu/g. The susceptibility of the polycrystalline spheres, assumed to be the average value for the bulk susceptibility of gallium, was (-0.257??0.003)??10-6 emu/g at 25??C, and (-0.299??0.003)??10-6 emu/g at -196??C. The susceptibility of liquid gallium was (0.0031??0.001) ??10-6 emu/g at 30??C and 100??C. Rotational diagrams of the susceptibilities in the three orthogonal planes of the unit cell were not sinusoidal. The anisotropy in the single crystals was presumably caused by the partial overlap of Brillouin zone boundaries by the Fermi-energy surface. The large change in susceptibility associated with the change in state was attributed to the absence of effective mass influence in the liquid state. ?? 1960 The American Institute of Physics.

  13. Thermodynamic binding constants for gallium transferrin

    SciTech Connect

    Harris, W.R.; Pecoraro, V.L.

    1983-01-18

    Gallium-67 is widely used as an imaging agent for tumors and inflammatory abscesses. It is well stablished that Ga/sup 3 +/ travels through the circulatory system bound to the serum iron transport protein transferrin and that this protein binding is an essential step in tumor localization. However, there have been conflicting reports on the magnitude of the gallium-transferrin binding constants. Therefore, thermodynamic binding constants for gallium complexation at the two specific metal binding sites of human serum transferrin at pH 7.4 and 5 mM NaHCO/sub 3/ have been determined by UV difference spectroscopy. The conditional constants calculated for 27 mM NaHCO/sub 3/ are log K/sub 1/* = 20.3 and log K/sub 2/* = 19.3. These results are discussed in relation to the thermodynamics of transferrin binding of Fe/sup 3 +/ and to previous reports on gallium binding. The strength of transferrin complexation is also compared to that of a series of low molecular weight ligands by using calculated pM values (pM = -log (Ga(H/sub 2/O)/sub 6/)) to express the effective binding strength at pH 7.4.

  14. Thermodynamics and Structure of Plutonium Alloys

    SciTech Connect

    Allen, P G; Turchi, P A; Gallegos, G F

    2004-01-30

    The goal of this project was to investigate the chemical and structural effects of gallium and impurity elements, iron and nickel, on the phase behavior and crystallography of Pu-Ga alloys. This was done utilizing a theoretical chemical approach to predict binary and ternary alloy energetics, phase stability, and transformations. The modeling results were validated with experimental data derived from the synthesis of selected alloys and advanced characterization tools. The ultimate goal of this work was to develop a robust predictive capability for studying the thermodynamics and the structure-properties relationships in complex materials of high relevance to the Laboratory and DOE mission.

  15. Ammonothermal Growth of Gallium Nitride

    NASA Astrophysics Data System (ADS)

    Pimputkar, Siddha

    Bulk, single crystal Gallium Nitride (GaN) crystals are essential for enabling high performance electronic and optoelectronic devices by providing arbitrarily oriented, high quality, large, single crystal GaN substrates. Methods of producing single crystals of sufficient size and quality at a rate that would enable successful commercialization has been a major focus for research groups and companies worldwide. Recent advances have demonstrated remarkable improvements, though high cost and lack of high volume production remain key challenges. Major investments in bulk GaN growth were made at UCSB with particular focus on the ammonothermal method. The existing lab was upgraded and a new facility was designed and built with improved experimental setups for ammonothermal growth of GaN. The facilities can simultaneously operate up to 15 reactors of differing designs and capabilities with the ability to grow crystals up to 2 inches in diameter. A novel in-situ technique was devised to investigate the growth chemistry which occurs at typical operating conditions of 3,000 atm and 600 °C. Improvements in ammonothermal GaN include improved growth rates for c-plane by a factor of four to 344 μm/day with an overall record growth rate of 544 μm/day achieved for the (112¯2) plane. Crystal qualities comparable to that of the seed crystal were achieved. Impurity concentrations for transition metals were consistently reduced by a factor of 100 to concentrations below 1017 atoms/cm3. Optical transparency was improved by significantly reducing the yellow coloration typically seen for ammonothermal GaN. Single crystal GaN was successfully grown on large seeds and a 1 inch x ½ inch x ½ inch GaN crystal was demonstrated. To better understand the growth chemistry, models were created for the decomposition of ammonia under growth conditions, with initial experiments performed using the designed in-situ setup to verify the model's accuracy. To investigate the surface morphology and

  16. Gallium 67 scintigraphy in glomerular disease

    SciTech Connect

    Bakir, A.A.; Lopez-Majano, V.; Levy, P.S.; Rhee, H.L.; Dunea, G.

    1988-12-01

    To evaluate the diagnostic usefulness of gallium 67 scintigraphy in glomerular disease, 45 patients with various glomerulopathies, excluding lupus nephritis and renal vasculitis, were studied. Persistent renal visualization 48 hours after the gallium injection, a positive scintigram, was graded as + (less than), ++ (equal to), and +++ (greater than) the hepatic uptake. Positive scintigrams were seen in ten of 16 cases of focal segmental glomerulosclerosis, six of 11 cases of proliferative glomerulonephritis, and one case of minimal change, and one of two cases of membranous nephropathy; also in three of six cases of sickle glomerulopathy, two cases of diabetic neuropathy, one of two cases of amyloidosis, and one case of mild chronic allograft rejection. The 25 patients with positive scans were younger than the 20 with negative scans (31 +/- 12 v 42 +/- 17 years; P less than 0.01), and exhibited greater proteinuria (8.19 +/- 7.96 v 2.9 +/- 2.3 S/d; P less than 0.01) and lower serum creatinine values (2 +/- 2 v 4.1 +/- 2.8 mg/dL; P less than 0.01). The amount of proteinuria correlated directly with the intensity grade of the gallium image (P less than 0.02), but there was no correlation between the biopsy diagnosis and the outcome of the gallium scan. It was concluded that gallium scintigraphy is not useful in the differential diagnosis of the glomerular diseases under discussion. Younger patients with good renal function and heavy proteinuria are likely to have a positive renal scintigram regardless of the underlying glomerulopathy.

  17. Wetting, spreading and Marangoni convection in gallium-bismuth alloys

    NASA Astrophysics Data System (ADS)

    Kolevzon, Vladimir

    2000-02-01

    The present study reports several novel results pertinent to the wetting transition in Ga-Bi. These results show that complete wetting depends crucially on the boundary conditions between the liquid sample and the container. If liquid Ga does not wet the container wall a thick Bi film of about 50 µ spreads over the Ga surface at nearly room temperature due to the Marangoni effect. If Ga wets the wall the wetting transition occurs near to the monotectic temperature of this system. The interfacial tension inferred from the surface light scattering data displays non-monotonic behaviour on heating.

  18. Indium gallium nitride/gallium nitride quantum wells grown on polar and nonpolar gallium nitride substrates

    NASA Astrophysics Data System (ADS)

    Lai, Kun-Yu

    Nonpolar (m-plane or a-plane) gallium nitride (GaN) is predicted to be a potential substrate material to improve luminous efficiencies of nitride-based quantum wells (QWs). Numerical calculations indicated that the spontaneous emission rate in a single In0.15Ga0.85N/GaN QW could be improved by ˜2.2 times if the polarization-induced internal field was avoided by epitaxial deposition on nonpolar substrates. A challenge for nonpolar GaN is the limited size (less than 10x10 mm2) of substrates, which was addressed by expansion during the regrowth by Hydride Vapor Phase Epitaxy (HVPE). Subsurface damage in GaN substrates were reduced by annealing with NH3 and N2 at 950°C for 60 minutes. It was additionally found that the variation of m-plane QWs' emission properties was significantly increased when the substrate miscut toward a-axis was increased from 0° to 0.1°. InGaN/GaN QWs were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on c-plane and m-plane GaN substrates. The QWs were studied by cathodoluminescence spectroscopy with different incident electron beam probe currents (0.1 nA ˜ 1000 nA). Lower emission intensities and longer peak wavelengths from c-plane QWs were attributed to the Quantum-confined Stark Effect (QCSE). The emission intensity ratios of m-plane QWs to c-plane QWs decreased from 3.04 at 1 nA to 1.53 at 1000 nA. This was identified as the stronger screening effects of QCSE at higher current densities in c-plane QWs. To further investigate these effects in a fabricated structure, biased photoluminescence measurements were performed on m-plane InGaN/GaN QWs. The purpose was to detect the possible internal fields induced by the dot-like structure in the InGaN layer through the response of these internal fields under externally applied fields. No energy shifts of the QWs were observed, which was attributed to strong surface leakage currents.

  19. Light Elements in the Core: Constraints from Gallium Partitioning

    NASA Astrophysics Data System (ADS)

    Blanchard, I.; Badro, J.; Siebert, J.; Ryerson, F. J.

    2014-12-01

    The formation of Earth's core has left a compositional imprint on the mantle, depleting and fractionating most of its siderophile (iron-loving) elements. Gallium is a moderately siderophile, hence it should be strongly depleted in the mantle. However, gallium concentration in the mantle matches that of lithophile (silicate-loving) elements having the same volatility. That is to say that either gallium behaves as a lithophile element during core formation, or a large influx of gallium was brought to the Earth after the core had formed. Geochemical evidence does not support the latter hypothesis, as it would require all other lithophile elements with similar volatility to be enriched in the mantle, or for late accretion to be composed of anomalously gallium-rich objects. In order to mitigate this issue, experimental studies have tried to understand how gallium behaves during core segregation by gauging the effects of pressure, temperature and oxygen fugacity on the partitioning of gallium between metal and silicate. None of these parameters provided the first-order change required to match the observation. We investigated the influence of core composition on gallium partitioning. The core in known to contain light-elements (oxygen, silicon sulfur and carbon), and those can change the activity of gallium in the metal, and strongly affect the behavior of gallium during core formation. We performed a series of metal-silicate partitioning experiments (2 GPa, 1673-2073 K) in a piston-cylinder press. We varied the light-element composition of the metal and observed that Si and O have a very strong influence on the activity of gallium, making it more lithophile. We then modeled terrestrial accretion as a continuous process and tested different accretion histories; we can reproduce the mantle concentration of gallium if the core segregates in a deep magma ocean (>40 GPa) and contains large amounts of silicon or oxygen.

  20. Inflammatory pseudotumor: A gallium-avid mobile mesenteric mass

    SciTech Connect

    Auringer, S.T.; Scott, M.D.; Sumner, T.E. )

    1991-08-01

    An 8-yr-old boy with a 1-mo history of culture-negative fever and anemia underwent gallium, ultrasound, and computed tomography studies as part of the evaluation of a fever of unknown origin. These studies revealed a mobile gallium-avid solid abdominal mass subsequently proven to be an inflammatory pseudotumor of the mesentery, a rare benign mass. This report documents the gallium-avid nature of this rare lesion and discusses associated characteristic clinical, pathologic, and radiographic features.

  1. Survey of the market, supply and availability of gallium

    SciTech Connect

    Rosi, F.D.

    1980-07-01

    The objective of this study was to assess the present consumption and supply of gallium, its potential availability in the satellite power system (SPS) implementation time frame, and commercial and new processing methods for increasing the production of gallium. Findings are reported in detail. The findings strongly suggest that with proper long range planning adequate gallium would be available from free-enterprise world supplies of bauxite for SPS implementation.

  2. Efficient water reduction with gallium phosphide nanowires

    PubMed Central

    Standing, Anthony; Assali, Simone; Gao, Lu; Verheijen, Marcel A.; van Dam, Dick; Cui, Yingchao; Notten, Peter H. L.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

    2015-01-01

    Photoelectrochemical hydrogen production from solar energy and water offers a clean and sustainable fuel option for the future. Planar III/V material systems have shown the highest efficiencies, but are expensive. By moving to the nanowire regime the demand on material quantity is reduced, and new materials can be uncovered, such as wurtzite gallium phosphide, featuring a direct bandgap. This is one of the few materials combining large solar light absorption and (close to) ideal band-edge positions for full water splitting. Here we report the photoelectrochemical reduction of water, on a p-type wurtzite gallium phosphide nanowire photocathode. By modifying geometry to reduce electrical resistance and enhance optical absorption, and modifying the surface with a multistep platinum deposition, high current densities and open circuit potentials were achieved. Our results demonstrate the capabilities of this material, even when used in such low quantities, as in nanowires. PMID:26183949

  3. Efficient water reduction with gallium phosphide nanowires

    NASA Astrophysics Data System (ADS)

    Standing, Anthony; Assali, Simone; Gao, Lu; Verheijen, Marcel A.; van Dam, Dick; Cui, Yingchao; Notten, Peter H. L.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

    2015-07-01

    Photoelectrochemical hydrogen production from solar energy and water offers a clean and sustainable fuel option for the future. Planar III/V material systems have shown the highest efficiencies, but are expensive. By moving to the nanowire regime the demand on material quantity is reduced, and new materials can be uncovered, such as wurtzite gallium phosphide, featuring a direct bandgap. This is one of the few materials combining large solar light absorption and (close to) ideal band-edge positions for full water splitting. Here we report the photoelectrochemical reduction of water, on a p-type wurtzite gallium phosphide nanowire photocathode. By modifying geometry to reduce electrical resistance and enhance optical absorption, and modifying the surface with a multistep platinum deposition, high current densities and open circuit potentials were achieved. Our results demonstrate the capabilities of this material, even when used in such low quantities, as in nanowires.

  4. Optical properties and plasmonic response of silver-gallium nanostructures

    SciTech Connect

    Lereu, A. L.; Lemarchand, F.; Zerrad, M.; Yazdanpanah, M.; Passian, A.

    2015-02-14

    Silver and gallium form an alloy Ag{sub 2}Ga via a room temperature spontaneous self-assembly that exhibits remarkable mechanical and electrical properties suitable for nanoscale measurements. However, whether photon excitation of plasmons in this emerging nanomaterial is retained or not has not been established. Here, we present a thin film formation of Ag{sub 2}Ga via a spreading-reactive process of liquid Ga on an Ag film and a characterization of its dielectric function ϵ(E) = ϵ{sub 1}(E) + iϵ{sub 2}(E) in the photon energy range 1.42 eV ≤ E < 4.2 eV. It is observed that while the plasmon damping increases, near an energy of 2.25 eV, the real part of ϵ exhibits a crossing with respect to that of Ag. Furthermore, the impact of new plasmon supporting materials is discussed and in order to enable further applications in plasmonics, the possibility of photon excitation of surface plasmons in Ag{sub 2}Ga is studied.

  5. Optical properties and plasmonic response of silver-gallium nanostructures

    DOE PAGESBeta

    Lereu, Aude; Lemarchand, F.; Zerrad, M.; Yazdanpanah, M.; Passian, Ali

    2015-02-12

    Silver and gallium form an alloy Ag2Ga via a room temperature spontaneous self-assembly that exhibits remarkable mechanical and electrical properties [1] suitable for nanoscale measurements [2]. However, whether photon excitation of plasmons in this emerging nanomaterial is retained or not has not been established. Here, we present a thin lm formation of Ag2Ga via a spreading- reactive process of liquid Ga on an Ag lm and a characterization of its dielectric function (E) = 1(E) - i 2(E) in the photon energy range 1.42 eV E <4.2 eV. It is observed that while the plasmon damping increases, near an energymore » of 3.4 eV, the real part of exhibits a crossing with respect to that of Ag. Furthermore, the impact of new plasmon supporting materials [3] is discussed and in order to enable further applications in plasmonics, the possibility of photon excitation of surface plasmons in Ag2Ga is studied.« less

  6. Optical properties and plasmonic response of silver-gallium nanostructures

    SciTech Connect

    Lereu, Aude; Zerrad, M.; Yazdanpanah, M.; Passian, Ali

    2015-02-12

    Silver and gallium form an alloy Ag2Ga via a room temperature spontaneous self-assembly that exhibits remarkable mechanical and electrical properties [1] suitable for nanoscale measurements [2]. However, whether photon excitation of plasmons in this emerging nanomaterial is retained or not has not been established. Here, we present a thin lm formation of Ag2Ga via a spreading- reactive process of liquid Ga on an Ag lm and a characterization of its dielectric function (E) = 1(E) - i 2(E) in the photon energy range 1.42 eV E <4.2 eV. It is observed that while the plasmon damping increases, near an energy of 3.4 eV, the real part of exhibits a crossing with respect to that of Ag. Furthermore, the impact of new plasmon supporting materials [3] is discussed and in order to enable further applications in plasmonics, the possibility of photon excitation of surface plasmons in Ag2Ga is studied.

  7. Spontaneous atomic ordering in MOVPE grown gallium arsenide antimonide

    NASA Astrophysics Data System (ADS)

    Jiang, Weiyang

    Spontaneous atomic ordering of semiconductor alloys is of great practical and fundamental interest. Atomic ordering of III-V alloys such as InGaP has been extensively studied experimentally and theoretically. In this thesis, we investigate a little-studied, atomic-ordering phenomenon, the so-called CuAu structure in the III-V material GaAsSb, grown by the technique of metalorganic vapor-phase epitaxy (MOVPE). Despite being first observed in 1986 in this material, there is as yet no detailed microscopic model for its formation mechanism. A key part of the thesis involves the study of surfactant effects on the ordering process in GaAsSb. Surfactants are elements which modify the growth surface without incorporation in the bulk. Nevertheless, they influence the incorporation of the bulk elements. We first explored the surfactant behavior of Bi on GaAs in order to understand how Bi incorporates at the surface and in the bulk in a related III-V material. For GaAs (001), Bi surface layers are stable at temperatures below 500°C but rapidly desorb at temperatures of 550°C and higher. Bi coverages of over 1 ML induce the formation of Bi islands, whose sizes increase with increasing Bi exposure. Bulk incorporation of Bi remains essentially zero at typical MOVPE growth temperatures. In the case of GaAsSb alloys, Bi surfactant was found to induce CuAu ordering, with no measurable Bi incorporation in the bulk. High resolution TEM was used to study the detailed microstructural features for ordered and disordered samples. The domain sizes of the ordered regions are from 5 nm to 20 nm under all growth conditions. In contrast to orderings in other alloys such as InGaP, CuAu ordering had no observable effect on the bandgap. CuAu ordering in GaAsSb was studied in a function of growth conditions, including Bi surfactant concentration, growth temperature, growth rate, and substrate miscut. All of these experiments confirm that bulk CuAu ordering is a surface driven, rather than bulk

  8. Gallium-67 imaging in muscular sarcoidosis

    SciTech Connect

    Edan, G.; Bourguet, P.; Delaval, P.; Herry, J.Y.

    1984-07-01

    A case is presented of sarcoid myopathy in which radiogallium was seen to accumulate in the sites of muscle involvement. Uptake of the radiotracer disappeared following institution of corticosteroid therapy. The exceptional nature of this case contrasts with the high frequency of biopsy evidence of sarcoid granulomas in muscle. Gallium-67 imaging can be used to determine the extent of muscle involvement and, through evaluation of uptake intensity, the degree of disease activity before and after treatment.

  9. A Gallium multiphase equation of state

    SciTech Connect

    Crockett, Scott D; Greeff, Carl

    2009-01-01

    A new SESAME multiphase Gallium equation of state (EOS) has been developed. The equation of state includes three of the solid phases (Ga I, Ga II, Ga III) and a fluid phase (liquid/gas). The EOS includes consistent latent heat between the phases. We compare the results to the liquid Hugoniol data. We also explore the possibility of re-freezing via dynamic means such as isentropic and shock compression.

  10. Long-chain amine-templated synthesis of gallium sulfide and gallium selenide nanotubes.

    PubMed

    Seral-Ascaso, A; Metel, S; Pokle, A; Backes, C; Zhang, C J; Nerl, H C; Rode, K; Berner, N C; Downing, C; McEvoy, N; Muñoz, E; Harvey, A; Gholamvand, Z; Duesberg, G S; Coleman, J N; Nicolosi, V

    2016-06-01

    We describe the soft chemistry synthesis of amine-templated gallium chalcogenide nanotubes through the reaction of gallium(iii) acetylacetonate and the chalcogen (sulfur, selenium) using a mixture of long-chain amines (hexadecylamine and dodecylamine) as a solvent. Beyond their role as solvent, the amines also act as a template, directing the growth of discrete units with a one-dimensional multilayer tubular nanostructure. These new materials, which broaden the family of amine-stabilized gallium chalcogenides, can be tentatively classified as direct large band gap semiconductors. Their preliminary performance as active material for electrodes in lithium ion batteries has also been tested, demonstrating great potential in energy storage field even without optimization. PMID:27221399

  11. GaN growth using gallium hydride generated by hydrogenation of liquid gallium

    NASA Astrophysics Data System (ADS)

    Nagayoshi, H.; Nishimura, S.; Takeuchi, T.; Hirai, M.; Terashima, K.

    2005-02-01

    The novel growth method of GaN using hydrogen radicals has been investigated. This paper is the first report of gallium hydrogenation reaction and deposition of GaN using hydrogenated gallium. We found that gallium (Ga) could be volatilized at low temperature by hydrogenation reaction with hydrogen radicals. In this reaction, Ga assumed to be volatilized as GaH 3. The GaN deposition was attempted by using gas phase reaction of NH 3 and GaH 3 generated by the reaction between liquid Ga and hydrogen radicals. Hydrogen radicals were generated by hot tungsten filament, which works as a catalyst during hydrogen cracking, whose temperature was 1600 °C. Surface morphology, deposition rate, and film structure were investigated. It was confirmed that GaN could be deposited by this method. The source materials of this method are safe and of low cost compared to the conventional methods.

  12. High-dose gallium imaging in lymphoma

    SciTech Connect

    Anderson, K.C.; Leonard, R.C.; Canellos, G.P.; Skarin, A.T.; Kaplan, W.D.

    1983-08-01

    The role of gallium-67 imaging in the management of patients with lymphoma, traditionally assessed using low tracer doses and the rectilinear scanner, was assessed when using larger doses (7 to 10 mCi) and a triple-peak Anger camera. Gallium scan results in 51 patients with non-Hodgkin's lymphoma and 21 patients with Hodgkin's disease were compared with simultaneous radiologic, clinical, and histopathologic reports. Subsequent disease course was also evaluated in light of radionuclide findings. Sensitivity and specificity of the scans were 0.90 or greater for both non-Hodgkin's lymphoma and Hodgkin's disease, and overall accuracy by site was 96 percent. Although there are insufficient numbers of pretreatment scans to allow any conclusions, our data suggest that newer approaches to gallium scanning in treated patients are (1) highly specific in all lymphomas and most sensitive in high-grade non-Hodgkin's lymphoma and Hodgkin's disease; (2) valuable in assessing the mediastinum in both non-Hodgkin's lymphoma and Hodgkin's disease; and (3) helpful adjuncts to computed tomographic scanning and ultrasonography in assessing abdominal node disease.

  13. Scanning probe microscopy on new dental alloys

    NASA Astrophysics Data System (ADS)

    Reusch, B.; Geis-Gerstorfer, J.; Ziegler, C.

    Surface analytical methods such as scanning force microscopy (SFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) were used to determine the surface properties of amalgam substitutes as tooth filling materials. In particular the corrosion and the passivation behavior of new gallium restorative materials were studied. To give relevant practical data, the measurements were performed with and without the alloys being stored in artificial saliva to simulate physiological oral conditions.

  14. P-n junctions formed in gallium antimonide

    NASA Technical Reports Server (NTRS)

    Clough, R.; Richman, D.; Tietjen, J.

    1970-01-01

    Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required.

  15. Gallium scintigraphy in bone infarction. Correlation with bone imaging

    SciTech Connect

    Armas, R.R.; Goldsmith, S.J.

    1984-01-01

    The appearance of gallium-67 images in bone infarction was studied in nine patients with sickle cell disease and correlated with the bone scan findings. Gallium uptake in acute infarction was decreased or absent with a variable bone scan uptake, and normal in healing infarcts, which showed increased uptake on bone scan. The significance of these findings is discussed.

  16. Laser photochemistry of gallium-containing compounds. [Trimethylgallium

    SciTech Connect

    Baughcum, S.L.; Oldenborg, R.C.

    1986-01-01

    The production of gas-phase gallium atoms in the photolysis of trimethylgallium has been investigated at 193 nm and at other laser wavelengths. Ground state (4 /sup 2/P/sup 0//sub 1/2) and metastable (4 /sup 2/P/sup 0//sub 3/2/) gallium atoms are detected using laser-induced fluorescence techniques. Our results indicate that gallium atoms continue to be produced at long times after the laser pulse. The observed dependence on photolysis laser fluence, trimethylgallium pressure, and buffer gas pressure are consistent with a mechanism in which highly excited gallium methyl radicals undergo unimolecular decomposition to produce gallium atoms. Since this process is observed to happen on the time scale of hundreds of microseconds, these results have important implications for studies of metal deposition and direct laser writing by laser photolysis of organometallic compounds. 31 refs., 5 figs.

  17. Gallium scintigraphic pattern in lung CMV infections

    SciTech Connect

    Ganz, W.I.; Cohen, D.; Mallin, W.

    1994-05-01

    Due to extensive use of prophylactic therapy for Pneumonitis Carinii Pneumonia (PCP), Cytomegalic Viral (CMV) infection may now be the most common lung infection in AIDS patients. This study was performed to determine Gallium-67 patterns in AIDS patients with CMV. Pathology reports were reviewed in AIDS patients who had a dose of 5 to 10 mCi of Gallium-67 citrate. Analysis of images were obtained 48-72 hours later of the entire body was performed. Gallium-67 scans in 14 AIDS patients with biopsy proven CMV, were evaluated for eye, colon, adrenal, lung and renal uptake. These were compared to 40 AIDS patients without CMV. These controls had infections including PCP, Mycobacterial infections, and lymphocytic interstitial pneumonitis. 100% of CMV patients had bowel uptake greater than or equal to liver. Similar bowel activity was seen in 50% of AIDS patients without CMV. 71% had intense eye uptake which was seen in only 10% of patients without CMV. 50% of CMV patients had renal uptake compared to 5% of non-CMV cases. Adrenal uptake was suggested in 50%, however, SPECT imaging is needed for confirmation. 85% had low grade lung uptake. The low grade lung had perihilar prominence. The remaining 15% had high grade lung uptake (greater than sternum) due to superimposed PCP infection. Colon uptake is very sensitive indicator for CMV infection. However, observing eye, renal, and or adrenal uptake improved the diagnostic specificity. SPECT imaging is needed to confirm renal or adrenal abnormalities due to intense bowel activity present in 100% of cases. When high grade lung uptake is seen superimposed PCP is suggested.

  18. Gallium-67 imaging in muscular sarcoidosis

    SciTech Connect

    Edan, G.; Bourguet, P.; Delaval, P.; Herry, J.Y.

    1984-07-01

    A case is presented of sarcoid myopathy in which radiogallium was seen to accumulate in the sites of muscle involvement. Uptake of the radiotracer disappeared following institution of corticosteroid therapy. The exceptional nature of this case contrasts with the high frequency of biopsy evidence of sarcoid muscle disease but is consistent with the rarity of clinical evidence of sarcoid granulomas in muscle. Gallium-67 imaging can be used to determine the extent of muscle involvement and, through evaluation of uptake intensity, the degree of disease activity before and after treatment.

  19. Resonant cavity modes in gallium oxide microwires

    NASA Astrophysics Data System (ADS)

    López, Iñaki; Nogales, Emilio; Méndez, Bianchi; Piqueras, Javier

    2012-06-01

    Fabry Perot resonant modes in the optical range 660-770 nm have been detected from single and coupled Cr doped gallium oxide microwires at room temperature. The luminescence is due to chromium ions and dominated by the broad band involving the 4T2-4A2 transition, strongly coupled to phonons, which could be of interest in tunable lasers. The confinement of the emitted photons leads to resonant modes detected at both ends of the wires. The separation wavelength between maxima follows the Fabry-Perot dependence on the wire length and the group refractive index for the Ga2O3 microwires.

  20. The Preparation and Structural Characterization of Three Structural Types of Gallium Compounds Derived from Gallium (II) Chloride

    NASA Technical Reports Server (NTRS)

    Gordon, Edward M.; Hepp, Aloysius F.; Duraj. Stan A.; Habash, Tuhfeh S.; Fanwick, Phillip E.; Schupp, John D.; Eckles, William E.; Long, Shawn

    1997-01-01

    The three compounds Ga2Cl4(4-mepy)2 (1),[GaCl2(4-mepy)4]GaCl4x1/2(4-mepy); (2) and GaCl2(4-mepy)2(S2CNEt2); (3) (4-mepy= 4-methylpyridine) have been prepared from reactions of gallium (II) chloride in 4-methylpyridine and characterized by single-crystal X-ray analysis. Small variations in the reaction conditions for gallium(II) chloride can produce crystals with substantially different structural properties. The three compounds described here encompass a neutral gallium(II) dimer in which each gallium is four-coordinate, an ionic compound containing both anionic and cationic gallium complex ions with different coordination numbers and a neutral six-coordinate heteroleptic

  1. Assessment of gallium-67 scanning in pulmonary and extrapulmonary sarcoidosis

    SciTech Connect

    Israel, H.L.; Gushue, G.F.; Park, C.H.

    1986-01-01

    Gallium-67 scans have been widely employed in patients with sarcoidosis as a means of indicating alveolitis and the need for corticosteroid therapy. Observation of 32 patients followed 3 or more years after gallium scans showed no correlation between findings and later course: of 10 patients with pulmonary uptake, 7 recovered with minor residuals; of 18 patients with mediastinal of extrathoracic uptake, 10 had persistent or progressive disease; of 4 patients with negative initial scans, 2 had later progression. The value of gallium-67 scans as an aid to diagnosis was studied in 40 patients with extrapulmonary sarcoidosis. In 12 patients, abnormal lacrimal, nodal, or pulmonary uptake aided in selection of biopsy sites. Gallium-67 scans and serum ACE levels were compared in 97 patients as indices of clinical activity. Abnormal gallium-67 uptake was observed in 96.3% of the tests in active disease, and ACE level elevation occurred in 56.3%. In 24 patients with inactive or recovered disease, abnormal gallium-67 uptake occurred in 62.5% and ACE level elevation in 37.5%. Gallium-67 scans have a limited but valuable role in the diagnosis and management of sarcoidosis.

  2. Dispersion of submicron Ni particles into liquid gallium

    NASA Astrophysics Data System (ADS)

    Cao, L. F.; Park, H. S.; Dodbiba, G.; Fujita, T.

    2008-06-01

    In this paper a liquid gallium with a low melting temperature and good thermal conductivity was used as a carrier to develop a new magnetorheological (MR) fluid that can be employed in energy convection devices. Submicron nickel particles, coated with silica, were chosen to be dispersed in the liquid gallium. The silica coating was used to improve the dispersion and prepare the composite particles with a density similar to that of the carrier liquid, i.e., liquid gallium. The supercooling phenomenon of liquid gallium was analyzed to better understand the dispersion of particles. The magnetization behaviours of both the silica-coated nickel particles and the synthesized MR fluids were measured. The results showed that the silica-coated nickel particles exhibited a shell-type structure, and the composite particle with a density same as the one of liquid gallium can be obtained by controlling the thickness of the coating layer to approximately 22 nm. The submicron nickel particles with the help of silica coating can be easily dispersed into liquid gallium. It was found that the supercooling of liquid gallium varied from 13.5 K to 19.3 K depending on the thickness of the coating layer of the dispersed particles. The saturation magnetization of the composite particles was reduced due to the occurrence of a non-magnetic silica layer. Figs 5, Refs 14.

  3. Gallium increases bone calcium and crystallite perfection of hydroxyapatite.

    PubMed

    Bockman, R S; Boskey, A L; Blumenthal, N C; Alcock, N W; Warrell, R P

    1986-12-01

    Gallium, a group IIIa metal, is known to interact with hydroxyapatite as well as the cellular components of bone. In recent studies we have found gallium to be a potent inhibitor of bone resorption that is clinically effective in controlling cancer-related hypercalcemia as well as the accelerated bone resorption associated with bone metastases. To begin to elucidate gallium's mechanism of action we have examined its effects on bone mineral properties. After short-term (14 days) administration to rats, gallium nitrate produced measurable changes in bone mineral properties. Using atomic absorption spectroscopy, low levels of gallium were noted to preferentially accumulate in regions of active bone formation, 0.54 +/- .07 microgram/mg bone in the metaphyses versus 0.21 +/- .03 microgram/mg bone in the diaphyses, P less than 0.001. The bones of treated animals had increased calcium content measured spectrophotometrically. Rats injected with radiolabeled calcium during gallium treatment had greater 45-calcium content compared to control animals. By wide-angle X-ray analyses, larger and/or more perfect hydroxyapatite was observed. The combined effects of gallium on bone cell function and bone mineral may explain its clinical efficacy in blocking accelerated bone resorption. PMID:3026592

  4. Gallium induces the production of virulence factors in Pseudomonas aeruginosa.

    PubMed

    García-Contreras, Rodolfo; Pérez-Eretza, Berenice; Lira-Silva, Elizabeth; Jasso-Chávez, Ricardo; Coria-Jiménez, Rafael; Rangel-Vega, Adrián; Maeda, Toshinari; Wood, Thomas K

    2014-02-01

    The novel antimicrobial gallium is a nonredox iron III analogue with bacteriostatic and bactericidal properties, effective for the treatment of Pseudomonas aeruginosa in vitro and in vivo in mouse and rabbit infection models. It interferes with iron metabolism, transport, and presumably its homeostasis. As gallium exerts its antimicrobial effects by competing with iron, we hypothesized that it ultimately will lead cells to an iron deficiency status. As iron deficiency promotes the expression of virulence factors in vitro and promotes the pathogenicity of P. aeruginosa in animal models, it is anticipated that treatment with gallium will also promote the production of virulence factors. To test this hypothesis, the reference strain PA14 and two clinical isolates from patients with cystic fibrosis were exposed to gallium, and their production of pyocyanin, rhamnolipids, elastase, alkaline protease, alginate, pyoverdine, and biofilm was determined. Gallium treatment induced the production of all the virulence factors tested in the three strains except for pyoverdine. In addition, as the Ga-induced virulence factors are quorum sensing controlled, co-administration of Ga and the quorum quencher brominated furanone C-30 was assayed, and it was found that C-30 alleviated growth inhibition from gallium. Hence, adding both C-30 and gallium may be more effective in the treatment of P. aeruginosa infections. PMID:24151196

  5. Composite droplets: evolution of InGa and AlGa alloys on GaAs(100).

    PubMed

    Sablon, K A; Wang, Zh M; Salamo, G J

    2008-03-26

    We present a comparative study for the evolution of utilizing indium gallium (InGa) and aluminum gallium (AlGa) alloys fabricated on GaAs(100) by means of simultaneous and sequential droplet formation. The composite alloys reported using the sequential approach lack the ability to precisely determine the final alloy composition as well as consistency in the density of the droplets. Further, the composition of the InGa alloy is not uniform, as seen by the size distribution using an atomic force microscope (AFM). Although this approach may be acceptable for materials with similar surface kinetics, as in the case of AlGa, it is not acceptable for InGa. This investigation reveals that the simultaneous approach for fabricating composite alloys is the optimum approach for producing InGa alloys with better control on composition for plasmonic applications such as plasmonic waveguides. PMID:21817741

  6. Gallium scanning in lymphoid interstitial pneumonitis of children with AIDS

    SciTech Connect

    Schiff, R.G.; Kabat, L.; Kamani, N.

    1987-12-01

    Lymphoid interstitial pneumonitis (LIP) is a frequent pulmonary complication in the child with the acquired immune deficiency syndrome (AIDS) and human immunodeficiency virus (HIV) infection. We report the gallium scan findings in two children with AIDS and LIP. Gallium scintigraphy in both children demonstrated increased radionuclide concentration throughout the lungs, a pattern indistinguishable scintigraphically from that of Pneumocystis carinii pneumonia (PCP). This should alert nuclear medicine practitioners and referring physicians to another cause of diffusely increased gallium uptake in the lungs of patients with AIDS.

  7. Limiting pump intensity for sulfur-doped gallium selenide crystals

    NASA Astrophysics Data System (ADS)

    Guo, J.; Li, D.-J.; Xie, J.-J.; Zhang, L.-M.; Feng, Z.-S.; Andreev, Yu M.; Kokh, K. A.; Lanskii, G. V.; Potekaev, A. I.; Shaiduko, A. V.; Svetlichnyi, V. A.

    2014-05-01

    High optical quality undoped and sulfur-doped gallium selenide crystals were grown from melts by the modified vertical Bridgman method. Detailed study of the damage produced under femtosecond pulse exposure has shown that evaluation of the damage threshold by visual control is unfounded. Black matter spots produced on crystal surfaces do not noticeably decrease either its transparency or its frequency conversion efficiency as opposed to real damage identified as caked well-cohesive gallium structures. For the first time it was demonstrated that optimally sulfur-doped gallium selenide crystal possesses the highest resistivity to optical emission (about four times higher in comparison with undoped gallium selenide).

  8. Thin Films of Gallium Arsenide and Gallium Aluminum Arsenide by Metalorganic Chemical Vapor Deposition.

    NASA Astrophysics Data System (ADS)

    Look, Edward Gene Lun

    Low pressure metalorganic chemical vapor deposition (LPMOCVD) of thin films of gallium arsenide (GaAs) and gallium aluminum arsenide (GaAlAs) was performed in a horizontal cold wall chemical vapor deposition (CVD) reactor. The organometallic (group III) sources were triethylgallium (TEGa) and triethylaluminum (TEAl), used in conjunction with arsine (AsH_3) as the group V source. It was found that growth parameters such as growth temperature, pressure, source flow rates and temperatures have a profound effect on the film quality and composition. Depending on the particular combination of conditions, both the surface and overall morphologies may be affected. The films were nondestructively analyzed by Raman and photoreflectance spectroscopies, x-ray diffraction and rocking curve studies, scanning electron microscopy, energy dispersive spectroscopy, Hall measurements and film thicknesses were determined with a step profilometer.

  9. Preliminary Experimental Measurements for a Gallium Electromagnetic (GEM) Thruster

    NASA Technical Reports Server (NTRS)

    Thomas, Robert E.; Burton, Rodney L.; Glumac, Nick G.; Polzin, Kurt A.

    2007-01-01

    A low-energy gallium plasma source is used to perform a spatially and temporally broad spectroscopic survey in the 220-520 nm range. Neutral, singly, and doubly ionized gallium are present in a 20 J, 1.8 kA (peak) arc discharge operating with a central cathode. When the polarity of the inner electrode is reversed the discharge current and arc voltage waveforms remain similar. Utilizing a central anode configuration, multiple Ga lines are absent in the 270-340 nm range. In addition, neutral and singly ionized Fe spectral lines are present, indicating erosion of the outer electrode. With graphite present on the insulator to facilitate breakdown, line emission from the gallium species is further reduced and while emissions from singly and doubly ionized carbon atoms and molecular carbon (C2) radicals are observed. These data indicate that a significant fraction of energy is shifted from the gallium and deposited into the various carbon species.

  10. Usefulness of gallium-67 citrate scanning in testicular seminoma

    SciTech Connect

    Willan, B.D.; Penney, H.; Castor, W.R.; McGowan, D.G.

    1987-10-01

    An analysis of 77 consecutive patients with a histologic diagnosis of seminoma testis, assessed and treated at the Cross Cancer Institute between 1977 and 1982, is presented. Ga-67 citrate was first used in the assessment of patients with malignant testicular tumors in 1973. Following three years of study that supported the observation of the gallium-avid nature of seminoma, gallium scans became routine in the initial staging assessment and were used also when recurrence was suspected. From 1977 through 1982, 72 patients with biopsy-proven seminoma testis were assessed initially for extent of disease by Ga-67 scanning. Comparison with intravenous pyelography and bipedal lymphography was possible for accuracy of tumor assessment. The scan sensitivity was 83%, and the specificity was 95%. During the same period, gallium was studied in nonseminomatous testicular tumors but the results were disappointing and its use was discontinued. The gallium-avid nature of seminoma testis may be useful in determining the extent of disease.

  11. Computer simulation of radiation damage in gallium arsenide

    NASA Technical Reports Server (NTRS)

    Stith, John J.; Davenport, James C.; Copeland, Randolph L.

    1989-01-01

    A version of the binary-collision simulation code MARLOWE was used to study the spatial characteristics of radiation damage in proton and electron irradiated gallium arsenide. Comparisons made with the experimental results proved to be encouraging.

  12. Hyperfine Magnetic Field Measurements in the Heusler Alloys COBALT(2)-TITANIUM-Z, COBALT(2)-MAGNESIUM-Z (z = Silicon, Germanium, and Tin) and COBALT(2)-MAGNESIUM- Gallium Using the Moessbauer Effect (me) and the Time Differential Perturbed Angular Correlation (tdpac) Techniques

    NASA Astrophysics Data System (ADS)

    Lahamer, Amer Said

    1990-01-01

    Measurements of the hyperfine magnetic field in a series of Heusler alloys were performed. The probes were in (^{119}Sn) and cadmium (^{111}Cd). These measurements were performed at the University of Cincinnati in Cincinnati, Ohio. Two techniques were used. The first technique was the Mossbauer effect, which was used to measure the hyperfine magnetic field on ^{119 }Sn in Co_2TiZ (Z = Si, Ge, and Sn), and the second technique was the Time Differential Perturbed Angular Correlation which was used to measure the hyperfine magnetic field on ^ {111}Cd in the Co_2MnZ (Z = Si, Ge, Sn, and Ga). The probes are expected to go to the Z sites of the alloys. The hyperfine magnetic field measurements on ^{119}Sn in Co _2TiZ (Z = Si, Ge, and Sn) alloys were done at room, dry ice and liquid nitrogen temperatures by using the Mossbauer effect technique. The data were fitted by using a least squares fit from which three parameters were extracted. These parameters are the isomer shift, the quadrupole splitting and the hyperfine magnetic field. Temperature variation measurements of the hyperfine magnetic field were performed on ^{111 }Cd in Co_2MnZ (Z = Si, Ge, Sn, and Ga) alloys. The data were fitted again by using a least squares fit from which the Larmor frequency which is related to the hyperfine magnetic field was extracted. Also the Fourier Transforms were taken of the data, on the one hand to confirm the results of the least squares fit and on the other hand to look for more frequencies. Results of the Fourier Transforms show that some of the probe, ^{111}In, did go to the Co site in the Co_2MnZ (Z = Ga, Si, and Ge) alloys. The hmf on ^{111 }Cd in the Co site of these alloys is found to be 68 kOe which is consistent with the value found in the literature. Two theoretical models were examined for the trends of hyperfine magnetic field on ^{119 }Sn and ^{111}Cd in Co_2MnZ (Z = Si, Ge, Sn, and Ga) alloys. These are the Campbell and Blandin model and the Stearns' overlap model

  13. Gallium arsenide solar array subsystem study

    NASA Technical Reports Server (NTRS)

    Miller, F. Q.

    1982-01-01

    The effects on life cycle costs of a number of technology areas are examined for a gallium arsenide space solar array. Four specific configurations were addressed: (1) a 250 KWe LEO mission - planer array; (2) a 250 KWe LEO mission - with concentration; (3) a 50 KWe GEO mission planer array; (4) a 50 KWe GEO mission - with concentration. For each configuration, a baseline system conceptual design was developed and the life cycle costs estimated in detail. The baseline system requirements and design technologies were then varied and their relationships to life cycle costs quantified. For example, the thermal characteristics of the baseline design are determined by the array materials and masses. The thermal characteristics in turn determine configuration, performance, and hence life cycle costs.

  14. Cavity optomechanics in gallium phosphide microdisks

    NASA Astrophysics Data System (ADS)

    Mitchell, Matthew; Hryciw, Aaron C.; Barclay, Paul E.

    2014-04-01

    We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8 × 105 and mode volumes <10(λ/n)3, and study their nonlinear and optomechanical properties. For optical intensities up to 8.0 × 104 intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5 μm and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g0/2π˜30 kHz for the fundamental mechanical radial breathing mode at 488 MHz.

  15. Cavity optomechanics in gallium phosphide microdisks

    SciTech Connect

    Mitchell, Matthew; Barclay, Paul E.; Hryciw, Aaron C.

    2014-04-07

    We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8 × 10{sup 5} and mode volumes <10(λ/n){sup 3}, and study their nonlinear and optomechanical properties. For optical intensities up to 8.0 × 10{sup 4} intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5 μm and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g{sub 0}/2π∼30 kHz for the fundamental mechanical radial breathing mode at 488 MHz.

  16. Gallium Arsenide solar cell radiation damage experiment

    NASA Technical Reports Server (NTRS)

    Maurer, R. H.; Kinnison, J. D.; Herbert, G. A.; Meulenberg, A.

    1991-01-01

    Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment.

  17. Producing gallium arsenide crystals in space

    NASA Technical Reports Server (NTRS)

    Randolph, R. L.

    1984-01-01

    The production of high quality crystals in space is a promising near-term application of microgravity processing. Gallium arsenide is the selected material for initial commercial production because of its inherent superior electronic properties, wide range of market applications, and broad base of on-going device development effort. Plausible product prices can absorb the high cost of space transportation for the initial flights provided by the Space Transportation System. The next step for bulk crystal growth, beyond the STS, is planned to come later with the use of free flyers or a space station, where real benefits are foreseen. The use of these vehicles, together with refinement and increasing automation of space-based crystal growth factories, will bring down costs and will support growing demands for high quality GaAs and other specialty electronic and electro-optical crystals grown in space.

  18. Radiation damage of gallium arsenide production cells

    NASA Technical Reports Server (NTRS)

    Mardesich, N.; Garlick, G. F. J.

    1987-01-01

    High-efficiency gallium arsenide cells, made by the liquid epitaxy method (LPE), have been irradiated with 1-MeV electrons up to fluences of 10 to the 16th e/sq cm. Measurements have been made of cell spectral response and dark and light-excited current-voltage characteristics and analyzed using computer-based models to determine underlying parameters such as damage coefficients. It is possible to use spectral response to sort out damage effects in the different cell component layers. Damage coefficients are similar to other reported in the literature for the emitter and buffer (base). However, there is also a damage effect in the window layer and possibly at the window emitter interface similar to that found for proton-irradiated liquid-phase epitaxy-grown cells. Depletion layer recombination is found to be less than theoretically expected at high fluence.

  19. Direct Band Gap Wurtzite Gallium Phosphide Nanowires

    PubMed Central

    2013-01-01

    The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594 nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength is tuned across an important range of the visible light spectrum (555–690 nm). This approach of crystal structure engineering enables new pathways to tailor materials properties enhancing the functionality. PMID:23464761

  20. The Soviet-American Gallium Experiment (SAGE)

    SciTech Connect

    Garvey, G.T.

    1989-01-01

    It is a great pleasure for me to have been asked by Louis Rosen to tell you about the Soviet-American Gallium Experiment (SAGE). This undertaking is a multi-institutional collaboration among scientists from the Institute for Nuclear Research, Moscow (INR), Los Alamos National Laboratory (LANL), and several US universities. Its purpose is to measure the number of low-energy electron neutrinos emitted from the Sun that arrive at this planet. As such, it is an extremely important experiment, touching on fundamental physics issues as well as solar dynamics. In contrast to the strategic overviews, plans, and hopes for international collaboration presented earlier today, SAGE is an ongoing working effort with high hopes of producing the first measurement of the Sun's low-energy neutrino flux. This paper reviews this experiment. 3 refs., 3 figs.

  1. The effect of copper and gallium compounds on ribonucleotide reductase

    SciTech Connect

    Narasimhan, J.

    1992-01-01

    The mode of action of copper complexes (CuL and CuKTS) and gallium compounds (gallium nitrate and citrate) in cytotoxicity was studied. The effects of these agents on the enzyme ribonucleotide reductase was investigated by monitoring the tyrosyl free radical present in the active site of the enzyme through electron spin resonance (ESR) spectroscopy. Ribonucleotide reductase, a key enzyme in cellular proliferation, consists of two subunits. M1, a dimer of molecular weight 170,000 contains the substrate and effector binding sites. M2, a dimer of molecular weight 88,000, contains non-heme iron and tyrosyl free radical essential for the activity of the enzyme. In studies using copper complexes, the cellular oxidative chemistry was examined by ESR studies on adduct formation with membranes, and oxidation of thiols. Membrane thiols were oxidized through the reduction of the ESR signal of the thiol adduct and the analysis of sulfhydryl content. Using the radiolabel [sup 59]Fe, the inhibitory action of copper thiosemicarbazones on cellular iron uptake was shown. The inhibitory action of CuL on ribonucleotide reductase was shown by the quenching of the tyrosyl free radical on the M2 subunit. The hypothesis that gallium directly interacts with the M2 subunit of the enzyme and displaces the iron from it was proven. The tyrosyl free radical signal from cell lysates was inhibited by the direct addition of gallium compounds. Gallium content in the cells was measured by a fluorimetric method, to ensure the presence of sufficient amounts of gallium to compete with the iron in the M2 subunit. The enzyme activity, measured by the conversion of [sup 14]C-CDP to the labeled deoxy CDP, was inhibited by the addition of gallium nitrate in a cell free assay system. The immunoprecipitation studies of the [sup 59]Fe labeled M2 protein using the monoclonal antibody directed against this subunit suggested that gallium releases iron from the M2 subunit.

  2. Complexometric determination of gallium with calcein blue as indicator

    USGS Publications Warehouse

    Elsheimer, H.N.

    1967-01-01

    A metalfluorechromic indicator, Calcein Blue, has been used for the back-titration of milligram amounts of EDTA in presence of gallium complexes. The indicator was used in conjunction with an ultraviolet titration assembly equipped with a cadmium sulphide detector cell and a microammeter for enhanced end-point detection. The result is a convenient and rapid method with an accuracy approaching 0.1 % and a relative standard deviation of about 0.4% for 10 mg of gallium. ?? 1967.

  3. Generator for ionic gallium-68 based on column chromatography

    DOEpatents

    Neirinckx, Rudi D.; Davis, Michael A.

    1981-01-01

    A physiologically acceptable solution of gallium-68 fluorides, having an activity of 0.1 to 50 millicuries per milliliter of solution is provided. The solution is obtained from a generator comprising germanium-68 hexafluoride bound to a column of an anion exchange resin which forms gallium-68 in situ by eluting the column with an acid solution to form a solution containing .sup.68 Ga-fluorides. The solution then is neutralized prior to administration.

  4. Gallium lung scintigraphy in amiodarone pulmonary toxicity

    SciTech Connect

    Zhu, Y.Y.; Botvinick, E.; Dae, M.; Golden, J.; Hattner, R.; Scheinman, M.

    1988-06-01

    We sought to assess the role of gallium-67 lung scintigrams in the evaluation of amiodarone pulmonary toxicity. Images and laboratory studies were evaluated in 54 patients who had chest radiographs and scintigraphic studies during amiodarone treatment of more than one month's duration among 561 patients receiving the medication for refractory arrhythmias. There were 22 patients with pulmonary symptoms and clinical evidence of amiodarone pulmonary toxicity (group 1); 19 patients had other causes for pulmonary symptoms (group 2); and 21 patients were without symptoms or other clinical evidence of pulmonary toxicity (group 3). There was no difference among groups in treatment duration or total amiodarone dose. Symptomatic presentation could not differentiate between group 1 and group 2 patients. However, radiographic findings of isolated pulmonary congestion or a normal radiograph in the presence of symptoms made amiodarone toxicity unlikely, while the appearance of new, dense radiographic infiltrates--often in a nodular distribution--were more frequent among group 1 patients (p less than 0.01). During symptomatic periods, 18 of 22 group 1 patients had abnormal gallium lung uptake, while four revealed more subtle serial changes but there was only one abnormal scintigram among symptomatic group 2 patients. Nonspecific radiographic abnormalities in patients with pulmonary symptoms on amiodarone therapy were rarely attributed to toxicity in the presence of a normal scintigram. One group 3 patient developed scintigraphic abnormalities early during amiodarone treatment, suggesting toxicity in the presence of a normal chest x-ray examination. Comparison of radiographic and scintigraphic studies performed during symptoms with those performed prior to symptom development best indicated the diagnosis, while comparison with later images assessed the efficacy of treatment.

  5. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    SciTech Connect

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  6. Method of fabricating germanium and gallium arsenide devices

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzban (Inventor)

    1990-01-01

    A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

  7. THERMALLY-INDUCED GALLIUM REMOVAL FROM PLUTONIUM DIOXIDE FOR MOX FUEL PRODUCTION

    SciTech Connect

    D. KOLMAN; M. GRIEGO; ET AL

    1999-09-01

    A process for the separation of gallium oxide from plutonium dioxide using a ''dry'' process has been developed. The process uses a reducing gas to generate a volatile gallium specie which is collected downstream. The effects of temperature, duration, flow rate, and sample size have been examined. Results indicate that temperature plays a strong role in the efficacy of gallium removal. Other variables have a much smaller effect on gallium removal efficiency. Gallium removal to approximately 1 ppm (atomic) has been observed. Gallium removal to sub-ppm levels appears feasible based on results-to-date.

  8. Gallium Adhesion: Phase Change of Gallium Enables Highly Reversible and Switchable Adhesion (Adv. Mater. 25/2016).

    PubMed

    Ye, Zhou; Lum, Guo Zhan; Song, Sukho; Rich, Steven; Sitti, Metin

    2016-07-01

    M. Sitti and co-workers find that gallium exhibits highly reversible and switchable adhesive characteristics during the liquid-solid phase change. As described on page 5088, this reversible adhesive allows miniature capsule-like robots, which are able to easily pick-and-place objects with irregular geometries and rough surfaces, and thus assemble such objects into a complex structure. The contact interface between gallium and the rough object is illustrated in the magnified image. PMID:27372722

  9. Gallium Potentiates the Antibacterial Effect of Gentamicin against Francisella tularensis

    PubMed Central

    Lindgren, Helena

    2015-01-01

    The reasons why aminoglycosides are bactericidal have not been not fully elucidated, and evidence indicates that the cidal effects are at least partly dependent on iron. We demonstrate that availability of iron markedly affects the susceptibility of the facultative intracellular bacterium Francisella tularensis strain SCHU S4 to the aminoglycoside gentamicin. Specifically, the intracellular depots of iron were inversely correlated to gentamicin susceptibility, whereas the extracellular iron concentrations were directly correlated to the susceptibility. Further proof of the intimate link between iron availability and antibiotic susceptibility were the findings that a ΔfslA mutant, which is defective for siderophore-dependent uptake of ferric iron, showed enhanced gentamicin susceptibility and that a ΔfeoB mutant, which is defective for uptake of ferrous iron, displayed complete growth arrest in the presence of gentamicin. Based on the aforementioned findings, it was hypothesized that gallium could potentiate the effect of gentamicin, since gallium is sequestered by iron uptake systems. The ferrozine assay demonstrated that the presence of gallium inhibited >70% of the iron uptake. Addition of gentamicin and/or gallium to infected bone marrow-derived macrophages showed that both 100 μM gallium and 10 μg/ml of gentamicin inhibited intracellular growth of SCHU S4 and that the combined treatment acted synergistically. Moreover, treatment of F. tularensis-infected mice with gentamicin and gallium showed an additive effect. Collectively, the data demonstrate that SCHU S4 is dependent on iron to minimize the effects of gentamicin and that gallium, by inhibiting the iron uptake, potentiates the bactericidal effect of gentamicin in vitro and in vivo. PMID:26503658

  10. Application of ultrasound in solvent extraction of nickel and gallium

    SciTech Connect

    Pesic, B.

    1996-07-01

    The effects of ultrasound on the rate of solvent extraction of nickel with Lix 65N and Lix 70, and gallium with Kelex 100 were investigated. These solvent extraction systems are noted by their sluggish nature. Low frequency (20 kHz) ultrasound increased the rates of extraction of nickel by factors of four to seven. The ultrasound had no effect on the final chemical equilibrium. Gallium extraction rates were enhanced with the use of ultrasound by as much as a factor of 15. Again, the ultrasound had no effect on extraction equilibrium. For both nickel and gallium, the enhanced rates were attributed to increased interfacial surface area associated with ultrasonically induced cavitation and microdroplet formation. The stability of the microdroplets permitted intermittent application of ultrasound with corresponding decreases in ultrasonic energy requirements. The lowest energy consumption was observed with short (0.25 to 5 s) bursts of high power (41 to 61 W) ultrasonic inputs. The study also provided insight into the factors that affect the complex extraction of gallium from sodium aluminate solutions. The rate controlling step was found to be the dehydration of the gallate ion, Ga(OH)4, and the first complex formation between gallium and Kelex 100. Sodium was found to enhance the extraction rate up to a point, beyond which increased concentration was detrimental. Increasing aluminum concentration was found to slow extraction rates. Modifiers and diluents were shown to markedly affect extraction rates even without ultrasound. Ketone modifiers, particularly 2-undecanone, when used with Kermac 470B or Escaid 200 diluents enhanced extraction rates of gallium to the point that the use of ultrasound provided no additional benefits. The positive effects of ketone modifiers for the solvent extraction of gallium had not been previously reported.

  11. Data in support of Gallium (Ga(3+)) antibacterial activities to counteract E. coli and S. epidermidis biofilm formation onto pro-osteointegrative titanium surfaces.

    PubMed

    Cochis, A; Azzimonti, B; Sorrentino, R; Della Valle, C; De Giglio, E; Bloise, N; Visai, L; Bruni, G; Cometa, S; Pezzoli, D; Candiani, G; Rimondini, L; Chiesa, R

    2016-03-01

    This paper contains original data supporting the antibacterial activities of Gallium (Ga(3+))-doped pro-osteointegrative titanium alloys, obtained via Anodic Spark Deposition (ASD), as described in "The effect of silver or gallium doped titanium against the multidrug resistant Acinetobacter baumannii" (Cochis et al. 2016) [1]. In this article we included an indirect cytocompatibility evaluation towards Saos2 human osteoblasts and extended the microbial evaluation of the Ga(3+) enriched titanium surfaces against the biofilm former Escherichia coli and Staphylococcus epidermidis strains. Cell viability was assayed by the Alamar Blue test, while bacterial viability was evaluated by the metabolic colorimetric 3-[4,5-dimethylthiazol-2-yl]-2,5 diphenyl tetrazolium bromide (MTT) assay. Finally biofilm morphology was analyzed by Scanning Electron Microscopy (SEM). Data regarding Ga(3+) activity were compared to Silver. PMID:26909385

  12. Data in support of Gallium (Ga3+) antibacterial activities to counteract E. coli and S. epidermidis biofilm formation onto pro-osteointegrative titanium surfaces

    PubMed Central

    Cochis, A.; Azzimonti, B.; Sorrentino, R.; Della Valle, C.; De Giglio, E.; Bloise, N.; Visai, L.; Bruni, G.; Cometa, S.; Pezzoli, D.; Candiani, G.; Rimondini, L.; Chiesa, R.

    2016-01-01

    This paper contains original data supporting the antibacterial activities of Gallium (Ga3+)-doped pro-osteointegrative titanium alloys, obtained via Anodic Spark Deposition (ASD), as described in “The effect of silver or gallium doped titanium against the multidrug resistant Acinetobacter baumannii” (Cochis et al. 2016) [1]. In this article we included an indirect cytocompatibility evaluation towards Saos2 human osteoblasts and extended the microbial evaluation of the Ga3+ enriched titanium surfaces against the biofilm former Escherichia coli and Staphylococcus epidermidis strains. Cell viability was assayed by the Alamar Blue test, while bacterial viability was evaluated by the metabolic colorimetric 3-[4,5-dimethylthiazol-2-yl]-2,5 diphenyl tetrazolium bromide (MTT) assay. Finally biofilm morphology was analyzed by Scanning Electron Microscopy (SEM). Data regarding Ga3+ activity were compared to Silver. PMID:26909385

  13. Gallium based low-interaction anions

    DOEpatents

    King, Wayne A.; Kubas, Gregory J.

    2000-01-01

    The present invention provides: a composition of the formula M.sup.+x (Ga(Y).sub.4.sup.-).sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; a composition of the formula (R).sub.x Q.sup.+ Ga(Y).sub.4.sup.- where Q is selected from the group consisting of carbon, nitrogen, sulfur, phosphorus and oxygen, each R is a ligand selected from the group consisting of alkyl, aryl, and hydrogen, x is an integer selected from the group consisting of 3 and 4 depending upon Q, and each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; an ionic polymerization catalyst composition including an active cationic portion and a gallium based weakly coordinating anion; and bridged anion species of the formula M.sup.+x.sub.y [X(Ga(Y.sub.3).sub.z ].sup.-y.sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, magnesium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, X is a bridging group between two gallium atoms, y is an integer selected from the group consisting 1 and 2, z is an integer of at least 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide.

  14. Gallium a unique anti-resorptive agent in bone: Preclinical studies on its mechanisms of action

    SciTech Connect

    Bockman, R.; Adelman, R.; Donnelly, R.; Brody, L.; Warrell, R. ); Jones, K.W. )

    1990-01-01

    The discovery of gallium as a new and unique agent for the treatment of metabolic bone disorders was in part fortuitous. Gallium is an exciting new therapeutic agent for the treatment of pathologic states characterized by accelerated bone resorption. Compared to other therapeutic metal compounds containing platinum or germanium, gallium affects its antiresorptive action without any evidence of a cytotoxic effect on bone cells. Gallium is unique amongst all therapeutically available antiresorptive agents in that it favors bone formation. 18 refs., 1 fig.

  15. Preliminary Spectroscopic Measurements for a Gallium Electromagnetic (GEM) Thruster

    NASA Technical Reports Server (NTRS)

    Thomas, Robert E.; Burton, Rodney L.; Glumac, Nick G.; Polzin, Kurt A.

    2007-01-01

    As a propellant option for electromagnetic thrusters, liquid ,gallium appears to have several advantages relative to other propellants. The merits of using gallium in an electromagnetic thruster (EMT) are discussed and estimates of discharge current levels and mass flow rates yielding efficient operation are given. The gallium atomic weight of 70 predicts high efficiency in the 1500-2000 s specific impulse range, making it ideal for higher-thrust, near-Earth missions. A spatially and temporally broad spectroscopic survey in the 220-520 nm range is used to determine which species are present in the plasma and estimate electron temperature. The spectra show that neutral, singly, and doubly ionized gallium species are present in a 20 J, 1.8 kA (peak) are discharge. With graphite present on the insulator to facilitate breakdown, singly and doubly ionized carbon atoms are also present, and emission is observed from molecular carbon (CZ) radicals. A determination of the electron temperature was attempted using relative emission line data, and while the spatially and temporally averaged, spectra don't fit well to single temperatures, the data and presence of doubly ionized gallium are consistent with distributions in the 1-3 eV range.

  16. Silicon Nitride For Gallium Arsenide Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Nagle, J.; Morgan, David V.

    1987-04-01

    Gallium Arsenide, unlike silicon does not have a natural oxide with the dielectric and interface qualities of SiO2. As a consequence alternative techniques have to be developed for device and IC processing applications. Plasma deposited silicon nitride films are currently being investigated in many laboratories. This paper will deal with the characterization of such films deposited under a range of gas and plasma deposition conditions. The techniques of Infra Red Spectroscopy and Rutherford backscattering have been used for characterization of both "as deposited layers" and layers which have been annealed up to temperatures of 800 °C, after deposition. The use of RBS for silicon nitride on GaAs is limited since the relatively small nitride spectrum is superimposed on much larger GaAs spectrum. The problem can be removed by placing carbon test substrates alongside the GaAs wafers. This separates the silicon and nitrogen spectra from the substrate enabling enhanced accuracy to be obtained. In this paper the range of results obtained will be discussed in the context of the deposition condition in order to identify the optimum conditions for obtaining a stoichiometric compound and a high quality interface.

  17. Gallium-68 PSMA uptake in adrenal adenoma.

    PubMed

    Law, W Phillip; Fiumara, Frank; Fong, William; Miles, Kenneth A

    2016-08-01

    Gallium-68 (Ga-68) labelled prostate-specific membrane antigen (PSMA) imaging by positron emission tomography (PET) has emerged as a promising tool for staging of prostate cancer and restaging of disease in recurrence or biochemical failure after definitive treatment of prostate cancer. Ga-68 PSMA PET produces high target-to-background images of prostate cancer and its metastases which are reflective of the significant overexpression of PSMA in these cells and greatly facilitates tumour detection. However, relatively little is known about the PSMA expression of benign neoplasms and non-prostate epithelial malignancies. This is a case report of PSMA uptake in an adrenal adenoma incidentally discovered on PET performed for restaging of biochemically suspected prostate cancer recurrence. With the increasing use of PSMA PET in the management of prostate cancer - and the not infrequent occurrence of adrenal adenomas - the appearance of low- to moderate-grade PSMA uptake in adrenal adenomas should be one with which reporting clinicians are familiar. PMID:26394552

  18. Investigation on gallium ions impacting monolayer graphene

    SciTech Connect

    Wu, Xin; Zhao, Haiyan Yan, Dong; Pei, Jiayun

    2015-06-15

    In this paper, the physical phenomena of gallium (Ga{sup +}) ion impacting monolayer graphene in the nanosculpting process are investigated experimentally, and the mechanisms are explained by using Monte Carlo (MC) and molecular dynamics (MD) simulations. Firstly, the MC method is employed to clarify the phenomena happened to the monolayer graphene target under Ga{sup +} ion irradiation. It is found that substrate has strong influence on the damage mode of graphene. The mean sputtering yield of graphene under 30 keV Ga{sup +} ion irradiation is 1.77 and the least ion dose to completely remove carbon atoms in graphene is 21.6 ion/nm{sup 2}. Afterwards, the focused ion beam over 21.6 ion/nm{sup 2} is used for the irradiation on a monolayer graphene supported by SiO2 experimentally, resulting in the nanostructures, i.e., nanodot and nanowire array on the graphene. The performances of the nanostructures are characterized by atomic force microscopy and Raman spectrum. A plasma plume shielding model is put forward to explain the nanosculpting results of graphene under different irradiation parameters. In addition, two damage mechanisms are found existing in the fabrication process of the nanostructures by using empirical MD simulations. The results can help us open the possibilities for better control of nanocarbon devices.

  19. Gallium-based avalanche photodiode optical crosstalk

    NASA Astrophysics Data System (ADS)

    Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

    2006-11-01

    Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time.

  20. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  1. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  2. Pure silver ohmic contacts to N- and P- type gallium arsenide materials

    DOEpatents

    Hogan, Stephen J.

    1986-01-01

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

  3. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  4. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  5. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  6. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOEpatents

    Hogan, S.J.

    1983-03-13

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  7. Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment.

    PubMed

    Vasquez, M R; Flauta, R E; Wada, M

    2008-02-01

    Monte Carlo simulations were conducted to study the formation of gallium-nitride (GaN) layer on liquid gallium (Ga) sputtering target immersed in nitrogen (N(2)) plasma. In the simulation model, N ions were assumed to possess energy equal to the bias voltage applied to the sputtering target with respect to the plasma. The results showed the surface morphology of GaN changed from a relatively smooth GaN on Ga surface at 50 eV N ion energy to a rough surface with GaN dendrites on liquid Ga at 500 eV ion energy. Further increase in N ion energy up to 1 keV resulted in smaller density of GaN dendrites on surface. Increasing surface coverage of Ga by GaN substantially reduced the sputtering yield of Ga from the target. These simulation results were correlated with previously reported experimental observations on liquid Ga surface immersed in the nitrogen plasma of a plasma-sputter-type ion source. PMID:18315225

  8. Short channel effects on gallium nitride/gallium oxide nanowire transistors

    NASA Astrophysics Data System (ADS)

    Yu, J.-W.; Yeh, P.-C.; Wang, S.-L.; Wu, Y.-R.; Mao, M.-H.; Lin, H.-H.; Peng, L.-H.

    2012-10-01

    Gallium nitride/gallium oxide GaN/Ga2O3 nanowire metal-oxide-semiconductor field-effect-transistors are shown to operate at an average electron velocity of ˜1.24 × 107 cm/s and threshold-voltage roll-off of -0.2 V as the transistor gate length Lg reduced from 500 to 50 nm. Improvement of saturation current to 120 μA and unity current/power-gain cut-off frequency to 150/180 GHz is observed on Lg = 50 nm devices. Our study reveals the advantages of using (i) polarization-induced positive charges and high-k dielectric at the {11¯01¯}GaN/{002}Ga2O3 interface to provide carrier confinement and to shield the drain field, and (ii) polarization-induced negative charges at the (0001)GaN/sapphire interface to form a back-barrier to suppress leakage and improve the short-channel transport properties.

  9. Measuring Nanoscale Heat Transfer for Gold-(Gallium Oxide)-Gallium Nitride Interfaces as a Function

    NASA Astrophysics Data System (ADS)

    Szwejkowski, Chester; Sun, Kai; Constantin, Costel; Giri, Ashutosh; Saltonstall, Christopher; Hopkins, Patrick; NanoSynCh Team; Exsite Team

    2014-03-01

    Gallium nitride (GaN) is considered the most important semiconductor after the discovery of Silicon. Understanding the properties of GaN is imperative in determining the utility and applicability of this class of materials to devices. We present results of time domain thermoreflectance (TDTR) measurements as a function of surface root mean square (RMS) roughness. We used commercially available 5mm x 5mm, single-side polished GaN (3-7 μm)/Sapphire (430 μm) substrates that have a Wurtzite crystal structure and are slightly n-type doped. The GaN substrates were annealed in the open atmosphere for 10 minutes (900-1000 °C). This high-temperature treatment produced RMS values from 1-60 nm and growth of gallium oxide (GaO) as measured with an atomic force microscopy and transmission electron microscopy respectively. A gold film (80nm) was deposited on the GaN surface using electron beam physical vapor deposition which was verified using ellipsometry and profilometry. The TDTR measurements suggest that the thermal conductivity decays exponentially with RMS roughness and that there is a minimum value for thermal boundary conductance at a roughness of 15nm.

  10. Antibacterial effect of gallium and silver on Pseudomonas aeruginosa treated with gallium-silver-phosphate-based glasses.

    PubMed

    Valappil, Sabeel P; Higham, Susan M

    2014-01-01

    Gallium and silver incorporated phosphate-based glasses were evaluated for antibacterial effect on the growth of Pseudomonas aeruginosa, which is a leading cause of opportunistic infections. The glasses were produced by conventional melt quenching methods at 1100°C for 1 h. Glass degradation studies were conducted by weight loss method. Disc diffusion assay and cell viability assay displayed statistically significant (p ≤ 0.0005) effect on P. aeruginosa growth which increased with decreasing calcium content in the glasses. The gallium ion release rates (1.83, 0.69 and 0.48 ppm·h(-1)) and silver ion release rates (2.97, 2.84 and 2.47 ppm·h(-1)) were found to account for this variation. Constant depth film fermentor was used to evaluate the anti-biofilm properties of the glasses. Both gallium and silver in the glass contributed to biofilm growth inhibitory effect on P. aeruginosa (up to 2.68 reduction in log 10 values of the viable counts compared with controls). The glasses were found to deliver gallium and silver in a controlled way and exerted cumulative antibacterial action on planktonic and biofilm growth of P. aeruginosa. The antibacterial, especially anti-biofilm, properties of the gallium and silver incorporated phosphate-based glasses make them a potential candidate to combat infections caused by P. aeruginosa. PMID:24840197

  11. Alloy materials

    DOEpatents

    Hans Thieme, Cornelis Leo; Thompson, Elliott D.; Fritzemeier, Leslie G.; Cameron, Robert D.; Siegal, Edward J.

    2002-01-01

    An alloy that contains at least two metals and can be used as a substrate for a superconductor is disclosed. The alloy can contain an oxide former. The alloy can have a biaxial or cube texture. The substrate can be used in a multilayer superconductor, which can further include one or more buffer layers disposed between the substrate and the superconductor material. The alloys can be made a by process that involves first rolling the alloy then annealing the alloy. A relatively large volume percentage of the alloy can be formed of grains having a biaxial or cube texture.

  12. Effect of bronchoscopy on localization of gallium-67 citrate

    SciTech Connect

    Phillips, B.A.; Cooper, K.R.; Fratkin, M.J.

    1983-03-01

    Bronchoscopy, bronchoalveolar lavage (BAL), and 67Ga lung scans are frequently performed for diagnosis or follow-up of patients with sarcoidosis, interstitial pneumonitis, lymphoma, infections, and bronchogenic carcinoma. Because many patients undergo all 3 of these procedures, it is important to determine what effects bronchoscopy and/or BAL may have on gallium imaging. Because 67Ga accumulates in neutrophils at the site of an inflammatory lesion as well as in those circulating in the vascular compartment, it seems reasonable to postulate that bronchoscopy could cause migration of labeled neutrophils into the lung, resulting in false positive gallium scans. To test this hypothesis, we studied 5 patients with varying chronologic relationships of 67Ga injection, gallium scanning, and bronchoscopy with BAL. In all patients, the repeat 67Ga lung scans remained normal or showed no change after bronchoscopy and BAL. We conclude that bronchoscopy with or without BAL does not cause increased 67Ga uptake by the lung.

  13. The Soviet-American gallium experiment at Baksan

    SciTech Connect

    Abazov, A. I.; Abdurashitov, D. N.; Anosov, O. L.; Danshin, S. N.; Eroshkina, L. A.; Faizov, E. L.; Gavrin, V. N.; Kalikhov, A. V.; Knodel, T. V.; Knyshenko, I. I.; Kornoukhov, V. N.; Mezentseva, S. A.; Mirmov, I. N.; Ostrinsky, A. I.; Petukhov, V. V; Pshukov, A. M.; Revzin, N. Ye; Shikhin, A. A.; Slyusareva, Ye. D.; Timofeyev, P. V.; Veretenkin, E. P.; Vermul, V. M.; Yantz, V. E.; Zakharov, Yu.; Zatsepin, G. T.; Zhandarov, V. I.

    1990-01-01

    A gallium solar neutrino detector is sensitive to the full range of the solar neutrino spectrum, including the low-energy neutrinos from the fundamental proton-proton fusion reaction. If neutrino oscillations in the solar interior are responsible for the suppressed {sup 8}B flux measured by the Homestake {sup 37}Cl experiment and the Kamiokande water Cherenkov detector, then a comparison of the gallium, chlorine, and water results may make possible a determination of the neutrino mass difference and mixing angle. A 30-ton gallium detector is currently operating in the Baksan laboratory in the Soviet Union, with a ratio of expected solar signal to measured background (during the first one to two {sup 71}Ge half lives) of approximately one. 28 refs.

  14. Liquid gallium jet-plasma interaction studies in ISTTOK tokamak

    NASA Astrophysics Data System (ADS)

    Gomes, R. B.; Fernandes, H.; Silva, C.; Sarakovskis, A.; Pereira, T.; Figueiredo, J.; Carvalho, B.; Soares, A.; Duarte, P.; Varandas, C.; Lielausis, O.; Klyukin, A.; Platacis, E.; Tale, I.; Alekseyv, A.

    2009-06-01

    Liquid metals have been pointed out as a suitable solution to solve problems related to the use of solid walls submitted to high power loads allowing, simultaneously, an efficient heat exhaustion process from fusion devices. The most promising candidate materials are lithium and gallium. However, lithium has a short liquid state temperature range when compared with gallium. To explore further this property, ISTTOK tokamak is being used to test the interaction of a free flying liquid gallium jet with the plasma. ISTTOK has been successfully operated with this jet without noticeable discharge degradation and no severe effect on the main plasma parameters or a significant plasma contamination by liquid metal. Additionally the response of an infrared sensor, intended to measure the jet surface temperature increase during its interaction with the plasma, has been studied. The jet power extraction capability is extrapolated from the heat flux profiles measured in ISTTOK plasmas.

  15. Interaction of a Liquid Gallium Jet with ISTTOK Edge Plasmas

    NASA Astrophysics Data System (ADS)

    Gomes, R. B.; Fernandes, H.; Silva, C.; Sarakovskis, A.; Pereira, T.; Figueiredo, J.; Carvalho, B.; Soares, A.; Duarte, P.; Varandas, C.; Lielausis, O.; Klyukin, A.; Platacis, E.; Tale, I.

    2008-04-01

    The use of liquid metals as plasma facing components in tokamaks has recently experienced a renewed interest stimulated by their advantages in the development of a fusion reactor. Liquid metals have been proposed to solve problems related to the erosion and neutronic activation of solid walls submitted to high power loads allowing an efficient heat exhaust from fusion devices. Presently the most promising candidate materials are lithium and gallium. However, lithium has a short liquid state range when compared, for example, with gallium that has essentially better thermal properties and lower vapor pressure. To explore further these properties, ISTTOK tokamak is being used to test the interaction of a free flying, fully formed liquid gallium jet with the plasma. The interacting, 2.3 mm diameter, jet is generated by hydrostatic pressure and has a 2.5 m/s flow velocity. The liquid metal injector has been build to allow the positioning of the jet inside the tokamak chamber, within a 13 mm range. This paper presents the first obtained experimental results concerning the liquid gallium jet-plasma interaction. A stable jet has been obtained, which was not noticeably affected by the magnetic field transients. ISTTOK has been successfully operated with the gallium jet without degradation of the discharge or a significant plasma contamination by liquid metal. This observation is supported by spectroscopic measurements showing that gallium radiation is limited to the region around the jet. Furthermore, the power deposited on the jet has been evaluated at different radial locations and the surface temperature increase estimated.

  16. On-chip superconductivity via gallium overdoping of silicon

    SciTech Connect

    Skrotzki, R.; Herrmannsdoerfer, T.; Heera, V.; Voelskow, M.; Muecklich, A.; Schmidt, B.; Skorupa, W.; Helm, M.; Wosnitza, J.; Fiedler, J.; Gobsch, G.

    2010-11-08

    We report on superconducting properties of gallium-enriched silicon layers in commercial (100) oriented silicon wafers. Ion implantation and subsequent rapid thermal annealing have been applied for realizing gallium precipitation beneath a silicon-dioxide cover layer. Depending on the preparation parameters, we observe a sharp drop to zero resistance at 7 K. The critical-field anisotropy proofs the thin-film character of superconductivity. In addition, out-of-plane critical fields of above 9 T and critical current densities exceeding 2 kA/cm{sup 2} promote these structures to be possible playgrounds for future microelectronic technology.

  17. Absence of gallium-67 avidity in diffuse pulmonary calcification

    SciTech Connect

    Lecklitner, M.L.; Foster, R.W.

    1985-09-01

    Diffuse pulmonary uptake by bone-seeking radiopharmaceuticals has been reported previously but, in the same patient, would pulmonary uptake of Ga-67 citrate yield clinically meaningful results. A patient with hypercalcemia and renal failure in whom bone scintigraphy demonstrated striking diffuse bilateral pulmonary uptake, but subsequent gallium imaging demonstrated no evidence of pulmonary uptake greater than body background, is discussed. We conclude that pulmonary uptake of gallium cannot be attributed to calcium deposition and should carry the same clinical significance in regard to inflammatory and malignant lesions as would be assigned to patients without pulmonary calcific deposits.

  18. Pade spectroscopy of structural correlation functions: Application to liquid gallium

    NASA Astrophysics Data System (ADS)

    Chtchelkatchev, N. M.; Klumov, B. A.; Ryltsev, R. E.; Khusnutdinoff, R. M.; Mokshin, A. V.

    2016-03-01

    We propose the new method of fluid structure investigation based on numerical analytic continuation of structural correlation functions with Pade approximants. The method particularly allows extracting hidden structural features of disordered condensed matter systems from experimental diffraction data. The method has been applied to investigate the local order of liquid gallium, which has a non-trivial structure in both the liquid and solid states. Processing the correlation functions obtained from molecular dynamic simulations, we show the method proposed reveals non-trivial structural features of liquid gallium such as the spectrum of length-scales and the existence of different types of local clusters in the liquid.

  19. Multiplane gallium tomography in assessment of occupational chest diseases

    SciTech Connect

    Cordasco, E.M.; O'Donnell, J.; MacIntyre, W.; Demeter, S.; Gonzalez, L.; Eren, M.; McMahon, W.; Burns, D.; Feiglin, D.H. )

    1990-01-01

    Gallium-67 scintigraphy is helpful in the evaluation of inflammatory, respiratory diseases. Single-photon emission computed tomography (SPECT) provides three-dimensional tomographic reconstruction of radioisotope distribution in the body. The addition of SPECT to gallium-67 scanning in 27 patients demonstrated an improvement in the sensitivity for detecting the presence and extent of interstitial occupational lung disease. This technique may provide earlier detection of parenchymal lung changes than can the chest x-ray and planar scanning in some patients with asbestosis. Findings in six patients with asbestosis are reported.

  20. First results from the Soviet-American Gallium Experiment

    SciTech Connect

    Abazov, A.I.; Abdurashitov, D.N.; Anosov, O.L.; Eroshkina, L.A.; Faizov, E.L.; Gavrin, V.N.; Kalikhov, A.V.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mezentseva, S.A.; Mirmov, I.N.; Ostrinsky, A.I.; Petukhov, V.V.; Pshukov, A.M.; Revzin, N.Y.; Shikhin, A.A.; Timofeyev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Zakharov, Y.; Zatsepin, G.T.; Zhandarov, V.I. . Inst. Yadernykh Issledovanij); Bowl

    1990-01-01

    The Soviet-American Gallium Experiment is the first experiment able to measure the dominant flux of low energy p-p solar neutrinos. Four extractions made during January to May 1990 from 30 tons of gallium have been counted and indicate that the flux is consistent with 0 SNU and is less than 72 SNU (68% CL) and less than 138 SNU (95% CL). This is to be compared with the flux of 132 SNU predicted by the Standard Solar Model. 10 refs., 4 figs., 1 tab.

  1. Extremely-efficient, miniaturized, long-lived alpha-voltaic power source using liquid gallium

    NASA Technical Reports Server (NTRS)

    Snyder, G. Jeffrey (Inventor); Patel, Jagdishbhai (Inventor); Fleurial, Jean-Pierre (Inventor)

    2004-01-01

    A power source converts .alpha.-particle energy to electricity for use in electrical systems. Liquid gallium or other liquid medium is subjected to .alpha.-particle emissions. Electrons are freed by collision from neutral gallium atoms to provide gallium ions. The electrons migrate to a cathode while the gallium ions migrate to an anode. A current and/or voltage difference then arises between the cathode and anode because of the work function difference of the cathode and anode. Gallium atoms are regenerated by the receiving of electrons from the anode enabling the generation of additional electrons from additional .alpha.-particle collisions.

  2. Gallium arsenide processing for gate array logic

    NASA Technical Reports Server (NTRS)

    Cole, Eric D.

    1989-01-01

    The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

  3. Gallium-67 uptake by the thyroid associated with progressive systemic sclerosis

    SciTech Connect

    Sjoberg, R.J.; Blue, P.W.; Kidd, G.S.

    1989-01-01

    Although thyroidal uptake of gallium-67 has been described in several thyroid disorders, gallium-67 scanning is not commonly used in the evaluation of thyroid disease. Thyroidal gallium-67 uptake has been reported to occur frequently with subacute thyroiditis, anaplastic thyroid carcinoma, and thyroid lymphoma, and occasionally with Hashimoto's thyroiditis and follicular thyroid carcinoma. A patient is described with progressive systemic sclerosis who, while being scanned for possible active pulmonary involvement, was found incidentally to have abnormal gallium-67 uptake only in the thyroid gland. Fine needle aspiration cytology of the thyroid revealed Hashimoto's thyroiditis. Although Hashimoto's thyroiditis occurs with increased frequency in patients with progressive systemic sclerosis, thyroidal uptake of gallium-67 associated with progressive systemic sclerosis has not, to our knowledge, been previously described. Since aggressive thyroid malignancies frequently are imaged by gallium-67 scintigraphy, fine needle aspiration cytology of the thyroid often is essential in the evaluation of thyroidal gallium-67 uptake.

  4. Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

    SciTech Connect

    Fontcuberta i Morral, A.; Colombo, C.; Abstreiter, G.; Arbiol, J.; Morante, J. R.

    2008-02-11

    Molecular beam epitaxy Ga-assisted synthesis of GaAs nanowires is demonstrated. The nucleation and growth are seen to be related to the presence of a SiO{sub 2} layer previously deposited on the GaAs wafer. The interaction of the reactive gallium with the SiO{sub 2} pinholes induces the formation of nanocraters, found to be the key for the nucleation of the nanowires. With SiO{sub 2} thicknesses up to 30 nm, nanocraters reach the underlying substrate, resulting into a preferential growth orientation of the nanowires. Possibly related to the formation of nanocraters, we observe an incubation period of 258 s before the nanowires growth is initiated.

  5. Abnormal gallium scintigraphy in pulmonary alveolar proteinosis (PAP)

    SciTech Connect

    Yeh, S.D.; White, D.A.; Stover-Pepe, D.E.; Caravelli, J.F.; Van Uitert, C.; Benua, R.S.

    1987-04-01

    A patient with medulloblastoma of the cerebellum developed dyspnea and hypoxemia. Pulmonary function tests showed decreased lung volume and diffusing capacity, while the chest radiographs initially showed only mild interstitial infiltrates. Repeated gallium scans showed diffuse lung uptake and diagnosis of pulmonary alveolar proteinosis was made by open lung biopsy.

  6. Discovery of gallium, germanium, lutetium, and hafnium isotopes

    SciTech Connect

    Gross, J.L.; Thoennessen, M.

    2012-09-15

    Currently, twenty-eight gallium, thirty-one germanium, thirty-five lutetium, and thirty-six hafnium isotopes have been observed and the discovery of these isotopes is described here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  7. Cellular uptake and anticancer activity of carboxylated gallium corroles.

    PubMed

    Pribisko, Melanie; Palmer, Joshua; Grubbs, Robert H; Gray, Harry B; Termini, John; Lim, Punnajit

    2016-04-19

    We report derivatives of gallium(III) tris(pentafluorophenyl)corrole, 1 [Ga(tpfc)], with either sulfonic (2) or carboxylic acids (3, 4) as macrocyclic ring substituents: the aminocaproate derivative, 3 [Ga(ACtpfc)], demonstrated high cytotoxic activity against all NCI60 cell lines derived from nine tumor types and confirmed very high toxicity against melanoma cells, specifically the LOX IMVI and SK-MEL-28 cell lines. The toxicities of 1, 2, 3, and 4 [Ga(3-ctpfc)] toward prostate (DU-145), melanoma (SK-MEL-28), breast (MDA-MB-231), and ovarian (OVCAR-3) cancer cells revealed a dependence on the ring substituent: IC50values ranged from 4.8 to >200 µM; and they correlated with the rates of uptake, extent of intracellular accumulation, and lipophilicity. Carboxylated corroles 3 and 4, which exhibited about 10-fold lower IC50values (<20 µM) relative to previous analogs against all four cancer cell lines, displayed high efficacy (Emax= 0). Confocal fluorescence imaging revealed facile uptake of functionalized gallium corroles by all human cancer cells that followed the order: 4 > 3 > 2 > 1 (intracellular accumulation of gallium corroles was fastest in melanoma cells). We conclude that carboxylated gallium corroles are promising chemotherapeutics with the advantage that they also can be used for tumor imaging. PMID:27044076

  8. The 100 micron detector development program. [gallium doped germanium photoconductors

    NASA Technical Reports Server (NTRS)

    Moore, W. J.

    1976-01-01

    An effort to optimize gallium-doped germanium photoconductors (Ge:Ga) for use in space for sensitive detection of far infrared radiation in the 100 micron region is described as well as the development of cryogenic apparatus capable of calibrating detectors under low background conditions.

  9. Gallium Oxide Nanostructures for High Temperature Sensors

    SciTech Connect

    Chintalapalle, Ramana V.

    2015-04-30

    Gallium oxide (Ga2O3) thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts=25-800 °C). The structural characteristics and electronic properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga2O3 films. XRD and SEM analyses indicate that the Ga2O3 films grown at lower temperatures were amorphous while those grown at Ts≥500 oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films at Ts=300-800 °C. The electronic structure determination indicated that the nanocrystalline Ga2O3films exhibit a band gap of ~5 eV. Tungsten (W) incorporated Ga2O3 films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. No secondary phase formation was observed in W-incorporated Ga2O3 films. W-induced effects were significant on the structure and electronic properties of Ga2O3 films. The band gap of Ga2O3 films without W-incorporation was ~5 eV. Oxygen sensor characteristics evaluated using optical and electrical methods indicate a faster response in W-doped Ga2O3 films compared to intrinsic Ga2O3 films. The results demonstrate the applicability of both intrinsic and W-doped Ga-oxide films for oxygen sensor application at temperatures ≥700 °C.

  10. Self- and zinc diffusion in gallium antimonide

    SciTech Connect

    Nicols, Samuel Piers

    2002-03-26

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak

  11. Characteristics of epitaxial garnets grown by CVD using single metal alloy sources. [Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Besser, P. J.; Hamilton, T. N.; Mee, J. E.; Stermer, R. L.

    1974-01-01

    Single metal alloys have been explored as the cation source in the chemical vapor deposition (CVD) of iron garnets. Growth of good quality single crystal garnet films containing as many as five different cations has been achieved over a wide range of deposition conditions. The relationship of film composition to alloy compositions and deposition conditions has been determined for several materials. By proper choice of the alloy composition and the deposition conditions, uncrazed deposits were grown on (111) gadolinium gallium garnet (GGG) substrates. Data on physical, magnetic and optical properties of representative films is presented and discussed.

  12. Pair distribution function study on compression of liquid gallium

    SciTech Connect

    Luo, Shengnian; Yu, Tony; Chen, Jiuhua; Ehm, Lars; Guo, Quanzhong; Parise, John

    2008-01-01

    Integrating a hydrothermal diamond anvil cell (HDAC) and focused high energy x-ray beam from the superconductor wiggler X17 beamline at the National Synchrotron Light Source (NSLS) at the Brookhaven National Laboratory (BNL), we have successfully collected high quality total x-ray scattering data of liquid gallium. The experiments were conducted at a pressure range from 0.1GPa up to 2GPa at ambient temperature. For the first time, pair distribution functions (PDF) for liquid gallium at high pressure were derived up to 10 {angstrom}. Liquid gallium structure has been studied by x-ray absorption (Di Cicco & Filipponi, 1993; Wei et al., 2000; Comez et al., 2001), x-ray diffraction studies (Waseda & Suzuki, 1972), and molecular dynamics simulation (Tsay, 1993; Hui et al., 2002). These previous reports have focused on the 1st nearest neighbor structure, which tells us little about the atomic arrangement outside the first shell in non- crystalline materials. This study focuses on the structure of liquid gallium and the atomic structure change due to compression. The PDF results show that the observed atomic distance of the first nearest neighbor at 2.78 {angstrom} (first G(r) peak and its shoulder at the higher Q position) is consistent with previous studies by x-ray absorption (2.76 {angstrom}, Comez et al., 2001). We have also observed that the first nearest neighbor peak position did not change with pressure increasing, while the farther peaks positions in the intermediate distance range decreased with pressure increasing. This leads to a conclusion of the possible existence of 'locally rigid units' in the liquid. With the addition of reverse Monte Carlo modeling, we have observed that the coordination number in the local rigit unit increases with pressure. The bulk modulus of liquid gallium derived from the volume compression curve at ambient temperature (300K) is 12.1(6) GPa.

  13. Gallium vacancies and gallium antisites as acceptors in electron-irradiated semi-insulating GaAs

    SciTech Connect

    Corbel, C.; Pierre, F. ); Saarinen, K.; Hautojaervi, P. ); Moser, P. )

    1992-02-15

    Positron-lifetime measurements show that acceptors are produced in semi-insulating GaAs by 1.5-MeV electron irradiation at 20 K. Two types of acceptors can be separated. The first ones are negative vacancy-type defects which anneal out over a very broad range of temperature between 77 and 500 K. The second ones are negative ion-type defects which are stable still at 450 K. The data show that these two types of defects are independent and do not form close pairs. We attribute both to gallium-related defects. We identify the ion-type acceptors as isolated gallium antisites. The vacancy-type acceptors are identified as gallium vacancies which are isolated or involved in negatively charged complexes. The introduction rate of the gallium antisite is estimated to be 1.8{plus minus}0.3 cm{sup {minus}1} in the fluence range 10{sup 17}--10{sup 18} cm{sup {minus}2} for 1.5-MeV electron irradiation at 20 K.

  14. Far-Infrared and Optical Studies of Gallium Arsenide and Aluminum Gallium Arsenide Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Stanaway, Mark Brian

    Available from UMI in association with The British Library. Requires signed TDF. This thesis reports far-infrared (FIR) and photoluminescence studies, performed at low temperatures (4.2K) and at magnetic fields up to 25T, of selectively and inadvertently doped bulk and low dimensional gallium arsenide (GaAs) and aluminium gallium arsenide (AlGaAs) semiconductor structures grown by molecular beam epitaxy. High-resolution FIR magnetospectroscopy of ultra -high mobility n-GaAs reveals a variety of shallow donor intra-impurity transitions plus spin-split higher Landau level transitions in the photoconductive response. The first observation of polarons bound to D^ - ions in bulk n-GaAs is reported. The excited state spectrum of the confined silicon donor in GaAs/AlGaAs multi-quantum wells (MQWs) has been examined. Narrower linewidths and more higher excited state donor transitions are noted in the present photoconductive investigation compared with previous reports. The electron recombination dynamics has been examined in silicon-doped GaAs/AlGaAs MQWs and homogeneous and sheet -doped bulk n-GaAs samples using time-resolved FIR photoconductivity. The extrinsic response of doped MQW structures suggests a potential use as a fast, sensitive detectors of FIR. FIR transmission measurements are reported for GaAs/AlGaAs quantum wells (QWs) of various widths in magnetic fields of up to 20T, tilted away from the normal to the QW plane by angles up to theta = 50^circ. Deviation of the cyclotron resonance field from a costheta law are interpreted using theoretical models describing Landau level/electric subband coupling. The in-plane magnetic field and excitation power dependence of the photoluminescence intensity of a GaAs/AlGaAs QW spectral feature is interpreted in terms of charge transfer in the QW, using a coupled oscillator model, and the efficiency of nonradiative electronic traps. In-plane magnetic field studies of the photoluminescence from a superlattice structure

  15. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

    PubMed Central

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm2 using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si. PMID:25593562

  16. Vapor-phase epitaxy of gallium nitride by gallium arc discharge evaporation

    NASA Astrophysics Data System (ADS)

    Heikman, S.; Keller, S.; Mishra, U. K.

    2006-08-01

    Vapor-phase epitaxy of GaN was performed by combining ammonia with gallium evaporated into an inert gas stream by a DC arc discharge, and letting the mixture pass through a pair of heated graphite susceptors. Growth rates as high as 30 μm/h were achieved. The growth on the top sample was specular in a large area, and was of high quality as characterized by atomic force microscopy and photoluminescence spectroscopy. The bottom sample had a high density of macroscopic defects, presumably caused by Ga droplets in the gas phase resulting from the arc evaporation process. The experimental growth rate was found to be less than {1}/{3} of values predicted in a computer flow dynamic model of the growth system, and Ga-NH 3 pre-reactions were implicated as the likely cause of the discrepancy. The growth efficiency, calculated to 2%, could arguably be improved by reducing the reactor growth pressure, and by changing the reactor geometry to avoid Ga condensation on walls. Potential advantages of the described growth technique are cheap source materials of high purity and low equipment costs. Furthermore, since no corrosive gasses were used, hardware corrosion and gas-phase impurities can be reduced.

  17. Gallium uptake in the thyroid gland in amiodarone-induced hyperthyroidism

    SciTech Connect

    Ling, M.C.; Dake, M.D.; Okerlund, M.D.

    1988-04-01

    Amiodarone is an iodinated antiarrhythmic agent that is effective in the treatment of atrial and ventricular arrhythmias. A number of side effects are seen, including pulmonary toxicity and thyroid dysfunction. A patient with both amiodarone-induced pneumonitis and hyperthyroidism who exhibited abnormal gallium activity in the lungs, as well as diffuse gallium uptake in the thyroid gland is presented. The latter has not been previously reported and supports the concept of iodide-induced thyroiditis with gallium uptake reflecting the inflammatory response.

  18. The influence of Ga additions on electric and magnetic properties of Co{sub 47}Fe{sub 21}B{sub 21}Si{sub 5}Nb{sub 6} alloy in crystal and liquid states

    SciTech Connect

    Sidorov, V. Rojkov, I.; Mikhailov, V.; Svec, P.; Janickovic, D.

    2015-08-17

    The influence of small additions of gallium on electric resistivity and magnetic susceptibility of the bulk glass forming Co{sub 47}Fe{sub 20.9}B{sub 21.2}Si{sub 4.6}Nb{sub 6.3} alloy was studied in a wide temperature range up to 1830 K. Gallium atoms were found to increase resistivity but decrease susceptibility of the alloy. The suppositions about clusters surrounding Ga atoms in the melt and new GFA criterion are given.

  19. Gallium arsenide pilot line for high performance components

    NASA Astrophysics Data System (ADS)

    Vehse, Robert C.; Lapham, E. F.

    1991-08-01

    The Gallium Arsenide Pilot Line for High Performance Components (Pilot Line III) is to develop a facility for the fabrication of GaAs logic and memory chips. Physical and electrical analysis conclusively demonstrated that the EFET problem was caused by residual AlGaAs remaining in the EFET tubs. For our Self Aligned Refractory Gate Integrated Circuit (SARGIC) process to perform as designed, the FET gates must be placed directly on Gallium Arsenide. Residual AlGaAs increases the FET thresholds and thereby substantially changes device characteristics. We solved the problem by developing a new etch process using a PP etchant (H3PO4 and H2O2). AlGaAs is now completely removed from EFET tubs and EFET threshold control has been restored. With wafer starts suspended and other program work minimized to conserve resources, there was little primary circuit testing. A new result is that the 32-Bit Multiplier is functional at 60 MHz.

  20. Vapor-Phase Synthesis of Gallium Phosphide Nanowires

    SciTech Connect

    Gu, Dr Zhanjun; Paranthaman, Mariappan Parans; Pan, Zhengwei

    2009-01-01

    Gallium phosphide (GaP) nanowires were synthesized in a high yield by vapor-phase reaction of gallium vapor and phosphorus vapor at 1150 C in a tube furnace system. The nanowires have diameters in the range of 25-100 nm and lengths of up to tens of micrometers. Twinning growth occurs in GaP nanowires, and as a result most nanowires contain a high density of twinning faults. Novel necklacelike GaP nanostructures that were formed by stringing tens of amorphous Ga-P-O microbeads upon one crystalline GaP nanowires were also found in some synthesis runs. This simple vapor-phase approach may be applied to synthesize other important group III-V compound nanowires.

  1. Neutron detection using boron gallium nitride semiconductor material

    SciTech Connect

    Atsumi, Katsuhiro; Inoue, Yoku; Nakano, Takayuki; Mimura, Hidenori; Aoki, Toru

    2014-03-01

    In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after α-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

  2. Synthesis and biological evaluation of gallium polyaminothiols (PAT).

    PubMed

    John, C S; Kinuya, S; Minear, G; Keast, R K; Paik, C H

    1993-02-01

    Two polyaminothiol ligands, one hexadentate, N,N',N"-tris[2-methyl(2-propanethiol)]-1,4,7-triazacyclononane (TACN), and another potentially heptadentate, tris[2-methyl(2-propanethiol)]aminoethylamine (TMAE), were synthesized and characterized using spectroscopic and analytical methods. Both ligands were labeled with gallium-67 at pH 3.0-3.5 in high yields. The resulting gallium chelates were lipophilic. The biodistribution studies for both the chelates showed hepatic uptake and biliary clearance. The total % ID activity for [67Ga]TACN in liver and intestine at 5 min was 33.86 increasing gradually to 61.4% at 30 min. The chelates were in vivo stable to plasma-transferrin transchelation as confirmed by scintigraphic images obtained by [67Ga]TACN in rats and by plasma incubation of the chelates. These results indicate that Ga-TACN is a potentially useful tracer for hepatobiliary imaging using PET. No brain uptake was found. PMID:8448576

  3. Ultra-low threshold gallium nitride photonic crystal nanobeam laser

    SciTech Connect

    Niu, Nan Woolf, Alexander; Wang, Danqing; Hu, Evelyn L.; Zhu, Tongtong; Oliver, Rachel A.; Quan, Qimin

    2015-06-08

    We report exceptionally low thresholds (9.1 μJ/cm{sup 2}) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.

  4. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOEpatents

    Bhattacharya, Raghu N.; Contreras, Miguel A.; Keane, James; Tennant, Andrew L. , Tuttle, John R.; Ramanathan, Kannan; Noufi, Rommel

    1998-08-08

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  5. Cutaneous gallium uptake in patients with AIDS with mycobacterium avium-intracellulare septicemia

    SciTech Connect

    Allwright, S.J.; Chapman, P.R.; Antico, V.F.; Gruenewald, S.M.

    1988-07-01

    Gallium imaging is increasingly being used for the early detection of complications in patients with AIDS. A 26-year-old homosexual man who was HIV antibody positive underwent gallium imaging for investigation of possible Pneumocystis carinii pneumonia. Widespread cutaneous focal uptake was seen, which was subsequently shown to be due to mycobacterium avium-intracellulare (MAI) septicemia. This case demonstrates the importance of whole body imaging rather than imaging target areas only, the utility of gallium imaging in aiding the early detection of clinically unsuspected disease, and shows a new pattern of gallium uptake in disseminated MAI infection.

  6. Nonpolar m-plane gallium Nitride-based Laser Diodes in the Blue Spectrum

    NASA Astrophysics Data System (ADS)

    Kelchner, Kathryn M.

    Gallium nitride (GaN), together with its alloys with aluminum and indium, have revolutionized the solid-state optoelectronics market for their ability to emit a large portion of the visible electromagnetic spectrum from deep ultraviolet and into the infrared. GaN-based semiconductor laser diodes (LDs) with emission wavelengths in the violet, blue and green are already seeing widespread implementation in applications ranging from energy storage, lighting and displays. However, commercial GaN-based LDs use the basal c-plane orientation of the wurtzite crystal, which can suffer from large internal electric fields due to discontinuities in spontaneous and piezoelectric polarizations, limiting device performance. The nonpolar orientation of GaN benefits from the lack of polarization-induced electric field as well as enhanced gain. This dissertation discusses some of the benefits and limitations of m-plane oriented nonpolar GaN for LD applications in the true blue spectrum (450 nm). Topics include an overview of material growth by metal-organic chemical vapor deposition (MOCVD), waveguide design and processing techniques for improving device performance for multiple lateral mode and single lateral mode ridge waveguides.

  7. Diagnosis of mycotic abdominal aortic aneurysm using 67-gallium citrate

    SciTech Connect

    Blumoff, R.L.; McCartney, W.; Jaques, P.; Johnson, G. Jr.

    1982-11-01

    Mycotic aneurysms of the abdominal aorta are uncommon, but potentially lethal problems. Clinical subtleties may suggest their presence, but in the past, definitive diagnosis has been dependent on surgical exploration or autopsy findings. A case is presented in which 67-gallium citrate abdominal scanning localized the site of sepsis in an abdominal aortic aneurysm and allowed for prompt and successful surgical therapy. This noninvasive technique is recommended as a adjunct in the diagnosis of mycotic abdominal aortic aneurysms.

  8. Two-photon photovoltaic effect in gallium arsenide.

    PubMed

    Ma, Jichi; Chiles, Jeff; Sharma, Yagya D; Krishna, Sanjay; Fathpour, Sasan

    2014-09-15

    The two-photon photovoltaic effect is demonstrated in gallium arsenide at 976 and 1550 nm wavelengths. A waveguide-photodiode biased in its fourth quadrant harvests electrical power from the optical energy lost to two-photon absorption. The experimental results are in good agreement with simulations based on nonlinear wave propagation in waveguides and the drift-diffusion model of carrier transport in semiconductors. Power efficiency of up to 8% is theoretically predicted in optimized devices. PMID:26466255

  9. Pyochelin potentiates the inhibitory activity of gallium on Pseudomonas aeruginosa.

    PubMed

    Frangipani, Emanuela; Bonchi, Carlo; Minandri, Fabrizia; Imperi, Francesco; Visca, Paolo

    2014-09-01

    Gallium (Ga) is an iron mimetic that has successfully been repurposed for antibacterial chemotherapy. To improve the antibacterial potency of Ga on Pseudomonas aeruginosa, the effect of complexation with a variety of siderophores and synthetic chelators was tested. Ga complexed with the pyochelin siderophore (at a 1:2 ratio) was more efficient than Ga(NO3)3 in inhibiting P. aeruginosa growth, and its activity was dependent on increased Ga entrance into the cell through the pyochelin translocon. PMID:24957826

  10. Use of Gallium-67 in the diagnosis of occult infections

    SciTech Connect

    Hoffer, P.B.

    1981-05-01

    The mechanism of Ga-67 citrates in the diagnosis of infection involves the rapid binding of gallium by transferrin. The Ga-67-transferrin complex gains access into inflammatory tissue to some extent through the leaky endothelium of vessels at sites of inflammation. In addition, Ga-67 binds to a limited extent to circulating neutrophils. Advances in imaging techniques using Ga-67 citrates are discussed. The clinical applications include the diagnosis of bone and joint infections, pulmonary lesions, and infections of the urinary tract.

  11. Smooth cubic commensurate oxides on gallium nitride

    SciTech Connect

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Losego, Mark D.; Mita, Seiji; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul; Biegalski, Michael D.; Christen, Hans M.

    2014-02-14

    Smooth, commensurate alloys of 〈111〉-oriented Mg{sub 0.52}Ca{sub 0.48}O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  12. Appraisal of lupus nephritis by renal imaging with gallium-67

    SciTech Connect

    Bakir, A.A.; Lopez-Majano, V.; Hryhorczuk, D.O.; Rhee, H.L.; Dunea, G.

    1985-08-01

    To assess the activity of lupus nephritis, 43 patients with systemic lupus erythematosus (SLE) were studied by gallium imaging. Delayed renal visualization 48 hours after the gallium injection, a positive result, was noted in 25 of 48 scans. Active renal disease was defined by the presence of hematuria, pyuria (10 or more red blood cells or white blood cells per high-power field), proteinuria (1 g or more per 24 hours), a rising serum creatinine level, or a recent biopsy specimen showing proliferative and/or necrotizing lesions involving more than 20 percent of glomeruli. Renal disease was active in 18 instances, inactive in 23, and undetermined in seven (a total of 48 scans). Sixteen of the 18 scans (89 percent) in patients with active renal disease showed positive findings, as compared with only four of 23 scans (17 percent) in patients with inactive renal disease (p less than 0.001). Patients with positive scanning results had a higher rate of hypertension (p = 0.02), nephrotic proteinuria (p = 0.01), and progressive renal failure (p = 0.02). Mild mesangial nephritis (World Health Organization classes I and II) was noted only in the patients with negative scanning results (p = 0.02) who, however, showed a higher incidence of severe extrarenal SLE (p = 0.04). It is concluded that gallium imaging is a useful tool in evaluating the activity of lupus nephritis.

  13. Incidental diagnosis of pregnancy on bone and gallium scintigraphy

    SciTech Connect

    Palestro, C.J.; Malat, J.; Collica, C.J.; Richman, A.H.

    1986-03-01

    Bone and gallium scintigraphy were performed as part of the diagnostic workup of a 21-yr-old woman who presented at our institution with a history of progressively worsening low back pain over a 1-wk period of time. The angiographic phase of the bone scan demonstrated a well-defined radionuclide blush within the pelvis just cephalad to the urinary bladder with persistent hyperemia noted in the blood-pool image. We attribute these findings to a uterine blush secondary to the pronounced uterine muscular hyperplasia, hyperemia, and edema that accompany pregnancy. Gallium scintigraphy demonstrated intense bilateral breast accumulation of the imaging agent in a typical doughnut pattern which is commonly found in the prelactating and lactating breast. Also demonstrated was apparent gallium accumulation in the placenta. This case is presented to emphasize the radionuclide findings that occur during pregnancy, particularly the incidental finding of radionuclide blush during the angiographic phase of a radionuclide scintigraphy which should alert the nuclear physician to the possibility of pregnancy in a woman of childbearing age.

  14. Defects in gallium nitride nanowires: first principles calculations

    SciTech Connect

    Wang, Zhiguo; Li, Jingbo; Gao, Fei; Weber, William J.

    2010-08-15

    Atomic configurations and formation energies of native defects in an unsaturated GaN nanowire grown along the [001] direction and with (100) lateral facets are studied using large-scale ab initio calculation. Cation and anion vacancies, antisites and interstitials in the neutral charge state are all considered. The nitrogen related defects are more stable than the gallium related defects under nitrogen-rich conditions. The configurations of these defects in the core region of the nanowire are same as those in the bulk GaN. The relaxation of vacancies is generally small, but the relaxation around antisite defects is large. The nitrogen interstitial relaxes into a split interstitial configuration. The configurations of the defects in the outermost free surface region are different than those in the core. A Ga atom on the outmost surface is replaced by a Ga interstital, and is ejected on to the surface to become an adsorbed atom. A gallium atom at the outermost surface can also be ejected out to become an adsorbed atom. Nitrogen interstitials form a split-interstitial configuration with one of the nearest-neighbor nitrogens. For a Ga vacancy at the edge of the side plane of the nanowire, nitrogen atom at a gallium site and nitrogen interstitial often induced the formation of N2 molecules with low formation energy, which agrees well with experiment findings [Nano Letters 9, 1844 (2009)].

  15. Comparison of the antimicrobial activities of gallium nitrate and gallium maltolate against Mycobacterium avium subsp. paratuberculosis in vitro.

    PubMed

    Fecteau, Marie-Eve; Aceto, Helen W; Bernstein, Lawrence R; Sweeney, Raymond W

    2014-10-01

    Johne's disease (JD) is an enteric infection of cattle and other ruminants caused by Mycobacterium avium subsp. paratuberculosis (MAP). This study compared the antimicrobial activities of gallium nitrate (GaN) and gallium maltolate (GaM) against two field MAP isolates by use of broth culture. The concentrations that resulted in 99% growth inhibition of isolates 1 and 2 were, respectively, 636 µM and 183 µM for GaN, and 251 µM and 142 µM for GaM. For both isolates, time to detection was significantly higher for GaM than GaN. These results suggest that GaM is more efficient than GaN in inhibiting MAP growth in vitro. PMID:25155307

  16. BRAZING ALLOYS

    DOEpatents

    Donnelly, R.G.; Gilliland, R.G.; Slaughter, G.M.

    1963-02-26

    A brazing alloy which, in the molten state, is characterized by excellent wettability and flowability, said alloy being capable of forming a corrosion resistant brazed joint wherein at least one component of said joint is graphite and the other component is a corrosion resistant refractory metal, said alloy consisting essentially of 20 to 50 per cent by weight of gold, 20 to 50 per cent by weight of nickel, and 15 to 45 per cent by weight of molybdenum. (AEC)

  17. VANADIUM ALLOYS

    DOEpatents

    Smith, K.F.; Van Thyne, R.J.

    1959-05-12

    This patent deals with vanadium based ternary alloys useful as fuel element jackets. According to the invention the ternary vanadium alloys, prepared in an arc furnace, contain from 2.5 to 15% by weight titanium and from 0.5 to 10% by weight niobium. Characteristics of these alloys are good thermal conductivity, low neutron capture cross section, good corrosion resistance, good welding and fabricating properties, low expansion coefficient, and high strength.

  18. Bone tissue incorporates in vitro gallium with a local structure similar to gallium-doped brushite.

    PubMed

    Korbas, M; Rokita, E; Meyer-Klaucke, W; Ryczek, J

    2004-01-01

    During mineral growth in rat bone-marrow stromal cell cultures, gallium follows calcium pathways. The dominant phase of the cell culture mineral constitutes the poorly crystalline hydroxyapatite (HAP). This model system mimics bone mineralization in vivo. The structural characterization of the Ga environment was performed by X-ray absorption spectroscopy at the Ga K-edge. These data were compared with Ga-doped synthetic compounds (poorly crystalline hydroxyapatite, amorphous calcium phosphate and brushite) and with strontium-treated bone tissue, obtained from the same culture model. It was found that Sr(2+) substitutes for Ca(2+) in the HAP crystal lattice. In contrast, the replacement by Ga(3+) yielded a much more disordered local environment of the probe atom in all investigated cell culture samples. The coordination of Ga ions in the cell culture minerals was similar to that of Ga(3+), substituted for Ca(2+), in the Ga-doped synthetic brushite (Ga-DCPD). The Ga atoms in the Ga-DCPD were coordinated by four oxygen atoms (1.90 A) of the four phosphate groups and two oxygen atoms at 2.02 A. Interestingly, the local environment of Ga in the cell culture minerals was not dependent on the onset of Ga treatment, the Ga concentration in the medium or the age of the mineral. Thus, it was concluded that Ga ions were incorporated into the precursor phase to the HAP mineral. Substitution for Ca(2+ )with Ga(3+) distorted locally this brushite-like environment, which prevented the transformation of the initially deposited phase into the poorly crystalline HAP. PMID:14648284

  19. POLLUTION PREVENTION IN THE SEMICONDUCTOR INDUSTRY THROUGH RECOVERY AND RECYCLING OF GALLIUM AND ARSENIC FROM GAAS POLISHING WASTES

    EPA Science Inventory

    A process was developed for the recovery of both arsenic and gallium from gallium arsenide polishing wastes. The economics associated with the current disposal techniques utilizing ferric hydroxide precipitation dictate that sequential recovery of toxic arsenic and valuble galliu...

  20. Zintl cluster chemistry in the alkali-metal-gallium systems

    SciTech Connect

    Henning, R.

    1998-03-27

    Previous research into the alkali-metal-gallium systems has revealed a large variety of networked gallium deltahedra. The clusters are analogues to borane clusters and follow the same electronic requirements of 2n+2 skeletal electrons for closo-deltahedra. This work has focused on compounds that do not follow the typical electron counting rules. The first isolated gallium cluster was found in Cs{sub 8}Ga{sub 11}. The geometry of the Ga{sub 11}{sup 7{minus}} unit is not deltahedral but can be described as a penta-capped trigonal prism. The reduction of the charge from a closo-Ga{sub 11}{sup 13{minus}} to Ga{sub 11}{sup 7{minus}} is believed to be the driving force of the distortion. The compound is paramagnetic because of an extra electron but incorporation of a halide atom into the structure captures the unpaired electron and forms a diamagnetic compound. A second isolated cluster has been found in Na{sub 10}Ga{sub 10}Ni where the tetra-capped trigonal prismatic gallium is centered by nickel. Stabilization of the cluster occurs through Ni-Ga bonding. A simple two-dimensional network occurs in the binary K{sub 2}Ga{sub 3} Octahedra are connected through four waist atoms to form a layered structure with the potassium atoms sitting between the layers. Na{sub 30.5}Ga{sub 60{minus}x}Ag{sub x} is nonstoichiometric and needs only a small amount of silver to form (x {approximately} 2--6). The structure is composed of three different clusters which are interconnected to form a three-dimensional structure. The RbGa{sub 3{minus}x}Au{sub x} system is also nonstoichiometric with a three-dimensional structure composed of Ga{sub 8} dodecahedra and four-bonded gallium atoms. Unlike Na{sub 30.5}Ga{sub 60{minus}x}Ag{sub x}, the RbGa{sub 3} binary is also stable. The binary is formally a Zintl phase but the ternary is not. Some chemistry in the alkali-metal-indium system also has been explored. A new potassium-indium binary is discussed but the structure has not been completely

  1. NiAl alloys for high-temperature structural applications

    NASA Astrophysics Data System (ADS)

    Darolia, Ram

    1991-03-01

    If their properties can be improved, nickel aluminide alloys offer significant payoffs in gas turbine engine applications. For these materials, excellent progress has been made toward understanding their mechanical behavior as well as improving their low-temperature ductility and high-temperature strength. For example, recent work shows that room-temperature ductility can be improved dramatically by microalloying with iron, gallium or molybdenum. The next challenge is to develop an alloy which has the required balance of ductility, toughness and strength. Development of design and test methodologies for components made out of low-ductility, anisotropic materials will also be required. While significant challenges remain, the continuing developments suggest that the prognosis for using NiAl alloys as high-temperature structural materials is good.

  2. Properties of Closed-Shell Titanium Silicate and Gallium-Containing Semiconductor Systems

    NASA Astrophysics Data System (ADS)

    Stoute, Nicholas Aaron

    We demonstrate that an atomic-scale approach may be appropriate for the analysis of the compositional and bonding properties of titanium silicate alloys and shallow d-core level reflectance spectra of gallium-compound semiconductors. Ti silicate analysis was conducted using X-Ray Absorption Spectroscopy (XAS), X-Ray Photoemission Spectroscopy (XPS), and Spectroscopic Ellipsometry (SE) data taken on a range of Ti-silicate alloys. XAS data were obtained by the Lucovsky group at Stanford Synchrotron Radiation Laboratories (SSRL) at the Stanford Linear Accelerator Center (SLAC), and were used as the primary source of information. To bolster conclusions we solicited XPS data from the Opila Laboratory at the University of Delaware, which were provided by Les Fleming. We also took SE data on Ti silicate alloys annealed at different temperatures using two ellipsometers, one of which was built by the author specifically to probe energies in the vacuum uv range. Reflectance data from 20 to 25 eV, which contain spectral features due to transitions from Ga3d core levels, were obtained on GaP, GaAs, GaSb, GaSe, and GaPxAs1ƒ{x at the storage ring Tantalus 1 at the Stoughton Synchrotron Radiation Center by Aspnes and co-workers from about 1980 to 1982. Ti L2,3 XAS data were fitted with reference spectra to obtain 4-fold coordination concentrations (in differing symmetries) and 6-fold coordination concentrations with respect to alloy composition and annealing. Analyzing the concentrations allowed us to draw conclusions on coordination with respect to alloy composition and annealing. We were able to model the 4-fold ¡§in solution¡¨ to 6-fold phase-segregated conversion as a stochastic process, and we found a complete conversion to 6-fold phase-segregated TiO 2 through annealing with at least 36% Ti and above. We attributed this phase segregation to a striation effect previously reported in the literature. XAS OK1 spectra corroborate these results. Investigation of the XPS Ti L

  3. Spintronics: Towards room temperature ferromagnetic devices via manganese and rare earth doped gallium nitride

    NASA Astrophysics Data System (ADS)

    Luen, Melvyn Oliver

    Spintronics is a multidisciplinary field aimed at the active manipulation of spin degrees of freedom in solid-state systems. The goal being the understanding of the interaction between the particle spin and its solid-state environment, and the making of useful devices based on the acquired knowledge. If Moore's law is to continue, then we need to find alternatives to conventional microelectronics. Where conventional electronic devices rely on manipulating charge to produce desired functions, spintronic devices would manipulate both the charge flow and electron spin within that flow. This would add an extra degree of freedom to microelectronics and usher in the era of truly nanoelectronic devices. Research aimed at a whole new generation of electronic devices is underway by introducing electron spin as a new or additional physical variable, and semiconductor devices that exploit this new freedom will operate faster and more efficiently than conventional microelectronic devices and offer new functionality that promises to revolutionize the electronics industry. Long recognized as the material of choice for next-generation solid-state lighting, gallium nitride (GaN) also has proven uses in the field of high power, high frequency field-effect transistors (FETs). But its promise as a material system for spintronic applications may be its ultimate legacy. In this dissertation, the growth of gallium-manganese-nitride (GaMnN) compound semiconductor alloy was investigated through the use of an in-house built metal-organic chemical vapor deposition (MOCVD) reactor. Building on previous investigations of ferromagnetic mechanisms in GaMnN, where ferromagnetism was shown to be carrier mediated, a above room temperature ferromagnetic GaMnN i-p-n diode structure was conceived. This device proved to be the first of its kind in the world, where ferromagnetic properties are controlled via proximity of the mediating holes, upon voltage bias of adjacent structure layers

  4. ZIRCONIUM ALLOY

    DOEpatents

    Wilhelm, H.A.; Ames, D.P.

    1959-02-01

    A binary zirconiuin--antimony alloy is presented which is corrosion resistant and hard containing from 0.07% to 1.6% by weight of Sb. The alloys have good corrosion resistance and are useful in building equipment for the chemical industry.

  5. URANIUM ALLOYS

    DOEpatents

    Seybolt, A.U.

    1958-04-15

    Uranium alloys containing from 0.1 to 10% by weight, but preferably at least 5%, of either zirconium, niobium, or molybdenum exhibit highly desirable nuclear and structural properties which may be improved by heating the alloy to about 900 d C for an extended period of time and then rapidly quenching it.

  6. Failure of Gallium-67 scintigraphy to identify reliably noninfectious interstitial nephritis: concise communication

    SciTech Connect

    Graham, G.D.; Lundy, M.M.; Moreno, A.J.

    1983-07-01

    Gallium-67 scintigraphy has been reported to be useful in the diagnosis of noninfectious interstitial nephritis. We studied 12 patients with Ga-67 citrate that were diagnosed as having noninfectious interstitial nephritis on renal biopsy. Only seven of the twelve patients with interstitial nephritis on biopsy were scan-positive. Gallium-67 scintigraphy may not reliably identify noninfectious interstitial nephritis.

  7. Low temperature recombination and trapping analysis in high purity gallium arsenide by microwave photodielectric techniques

    NASA Technical Reports Server (NTRS)

    Khambaty, M. B.; Hartwig, W. H.

    1972-01-01

    Some physical theories pertinent to the measurement properties of gallium arsenide are presented and experimental data are analyzed. A model for explaining recombination and trapping high purity gallium arsenide, valid below 77 K is assembled from points made at various places and an appraisal is given of photodielectric techniques for material property studies.

  8. Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium

    DOEpatents

    Marks, Tobin J.; Chen, You-Xian

    2000-01-01

    Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

  9. X-ray microscopy studies on the pharmaco-dynamics of therapeutic gallium in rat bones

    SciTech Connect

    Bockman, R.; Repo, M.; Warrell, R.; Pounds, J.G.; Kwiatek, W.M.; Long, G.J.; Schidlovksy, G.; Jones, K.W.

    1987-01-01

    We describe here our preliminary results on gallium and calcium quantitation and localization using x-ray microscopy techniques at the X-26 beam line of the National Synchrotron Light Source (NSLS) at 50 to 100 ..mu..m resolution and 10/sup )minus/6) gg detection levels. Since the original observation of exogenous gallium accumulation in bones, several studies have demonstrated that gallium nitrate is extremely effective in preserving boen mienral content both in vivo and in vitro. Gallium nitrate therapy normalized serum calcium levels in a study of patients with caner-related hypercalcemia, resistant to standard hydration and diuretic therapy. Recently, gallium nitrate treatment has been shown to halt the accelerated bone resorption that is frequently associated with cancers metastatic to bone. Several lines of evidence from vitro studies recently led to the demonstration of increased bone calcium and improvement in hydroxyapatite crystallinity in adult gallium-treated rats. Evidence is rapidly accumulating that gallium nitrate is an effective, new therapeutic agent for inhibition of accelerated bone resorption associated with cancer-related hypercalcemia. It has also been suggested that gallium could have wide clinical applications in disorders characterized by accelerated calcium loss from bone. 7 refs., 3 figs., 1 tab

  10. Investigation of the variations in the crystallization front shape during growth of gadolinium gallium and terbium gallium crystals by the Czochralski method

    SciTech Connect

    Budenkova, O. N. Vasiliev, M. G.; Yuferev, V. S.; Ivanov, I. A.; Bul'kanov, A. M.; Kalaev, V. V.

    2008-12-15

    Numerical investigation of the variations in the crystallization front shape during growth of gadolinium gallium and terbium gallium garnet crystals in the same thermal zone and comparison of the obtained results with the experimental data have been performed. It is shown that the difference in the behavior of the crystallization front during growth of the crystals is related to their different transparency in the IR region. In gadolinium gallium garnet crystals, which are transparent to thermal radiation, a crystallization front, strongly convex toward the melt, is formed in the growth stage, which extremely rapidly melts under forced convection. Numerical analysis of this process has been performed within the quasistationary and nonstationary models. At the same time, in terbium gallium garnet crystals, which are characterized by strong absorption of thermal radiation, the phase boundary shape changes fairly smoothly and with a small amplitude. In this case, as the crystal is pulled, the crystallization front tends to become convex toward the crystal bulk.

  11. Alternative substrates for gallium nitride epitaxy and devices: Laterally overgrown gallium nitride and silicon(111)

    NASA Astrophysics Data System (ADS)

    Marchand, Hugues

    Gallium nitride films grown on sapphire or silicon carbide using the conventional 'two-step' technique typically exhibit threading dislocations on the order of ˜109 cm-2, which are detrimental to device performance. In addition, sapphire and silicon carbide substrates are expensive and available only in limited size (2-3 inch diameter). This work addresses both issues by evaluating the properties of GaN films synthesized by lateral epitaxial overgrowth (LEO) and conventional growth on sapphire and Si(111) substrates. LEO consists of partially masking a previously-grown seed layer and performing a subsequent regrowth such that the regrown features extend over the masked areas. Under favorable conditions the threading dislocations originating from the seed material are blocked by the mask material or redirected by the growing facets. In this work dislocation densities as low as ˜106 cm-2 were observed in the laterally-overgrown areas. The overgrown features exhibited well-defined facets ((0001), {11¯01}, {112¯0}, {112¯1}, {112¯2}), the persistence of which depended on the orientation of the mask as well as on the growth conditions. The relationship between the morphology of the LEO stripes and the growth conditions (temperature, pressure, ammonia and trimethylgallium partial pressures) was characterized for LEO on GaN/sapphire substrates. A qualitative model of the growth mechanisms was presented based on the microscopic structure of the growing surfaces. Microstructural characterization revealed a crystallographic tilt between the seed and the LEO region, which resulted in the formation of dislocations above the mask edge and at the junction plane of adjacent stripes. GaN stripes laterally overgrown on AlN/Si(111) exhibited similar properties. However, chemical interactions between the substrate and the precursors caused morphological degradation, which could be avoided by using a thick (≥180 nm) AlN buffer layer. In addition, thermal expansion mismatch

  12. Pulmonary Kaposi sarcoma in patients with AIDS: Scintigraphic diagnosis with sequential thallium and gallium scanning

    SciTech Connect

    Lee, V.W.; Fuller, J.D.; O'Brien, M.J.; Parker, D.R.; Cooley, T.P.; Liebman, H.A. )

    1991-08-01

    Pulmonary Kaposi sarcoma associated with acquired immunodeficiency syndrome (AIDS) is difficult to diagnose because the clinical presentations and radiographic findings are nonspecific. The authors report three proved cases of AIDS-associated pulmonary Kaposi sarcoma diagnosed with sequential thallium and gallium scans. These scans demonstrated abnormal increase of pulmonary thallium uptake, whereas the gallium uptake was negative. In the authors' experience and in reports in the radiology literature, infected areas of the chest are generally thallium-negative on the delayed (3-hour) scans but are gallium-avid, whereas lymphomas are both thallium- and gallium-avid. The authors conclude that sequential thallium and gallium scans can be used to help diagnose pulmonary Kaposi sarcoma and distinguish it from other common AIDS-associated chest complications such as lymphoma and infections.

  13. Measurement of achievable plutonium decontamination from gallium by means of PUREX solvent extraction

    SciTech Connect

    Collins, E.D.; Campbell, D.O.; Felker, L.K.

    2000-01-01

    The objective of the work described herein was to measure, experimentally, the achievable decontamination of plutonium from gallium by means of the PUREX solvent extraction process. Gallium is present in surplus weapons-grade plutonium (WG-Pu) at a concentration of approximately 1 wt%. Plans are to dispose of surplus WG-Pu by converting it to UO{sub 2}-PuO{sub 2} mixed oxide (MOX) fuel and irradiating it in commercial power reactors. However, the presence of high concentrations of gallium in plutonium is a potential corrosion problem during the process of MOX fuel irradiation. The batch experiments performed in this study were designed to measure the capability of the PUREX solvent extraction process to separate gallium from plutonium under idealized conditions. Radioactive tracing of the gallium with {sup 72}Ga enabled the accurate measurement of low concentrations of extractable gallium. The experiments approximated the proposed flowsheet for WG-Pu purification, except that only one stage was used for each process: extraction, scrubbing, and stripping. With realistic multistage countercurrent systems, much more efficient separations are generally obtained. The gallium decontamination factor (DF) obtained after one extraction stage was about 3 x 10{sup 6}. After one scrub stage, all gallium measurements were less than the detection limit, which corresponded to DFs >5 x 10{sup 6}. All these values exceed a 10{sup 6} DF needed to meet a hypothetical 10-ppb gallium impurity limit in MOX fuel. The results of this study showed no inherent or fundamental problem with regard to removing gallium from plutonium.

  14. Survival of rabbit platelets labeled with gallium 67

    SciTech Connect

    Mazoyer, E.; Carpenter, D.; Ebbe, S.; Yano, Y.; Dalal, K.; Singh, M.; Mazoyer, B.

    1988-02-01

    The viability of rabbit platelets labeled with radioactive gallium was determined to analyze the feasibility of using platelets labeled with gallium 67 as an imaging reagent for positron emission tomography. Platelets were labeled with a complex of the longer lived gallium 67 and mercaptopyridine-N-oxide (MPO) or with sodium chromate Cr 51. Their survival after transfusion was measured. Labelling efficiency of /sup 67/Ga-MPO was 6.5% to 45.8% (26.8% +/- 2.8%) when platelets were suspended in saline solution, but was much lower (1.6% +/- 0.8%) in plasma. Platelets labeled with either radioisotope in a saline medium survived as well as platelets labeled with 51Cr in plasma. Recovery values 1 hour after transfusion and mean platelet survivals were 68.6% +/- 4.9% and 3.4 +/- 0.2 days for /sup 67/Ga in saline solution, 76.5% +/- 6.8% and 3.8 +/- 0.5 days for /sup 51/Cr in saline solution, and 73.7% +/- 7.4% and 3.6 +/- 0.5 days for /sup 51/Cr in plasma. Labeled platelet concentrates always contained extra radioactivity not firmly bound to viable platelets. A postlabeling wash in saline solution did not reduce this contamination and resulted in reduction of the number of viable platelets. The results showed that rabbit platelets labeled with /sup 67/Ga-MPO survived in the circulation as well as those labeled by a standard protocol with sodium chromate Cr 51.

  15. Gallium-68 chemistry for labeling platelets, proteins and lipoproteins

    SciTech Connect

    Yano, Y.; Budinger, T.F.; Ebbe, S.N.; Mathis, C.A.; Moore, D.H.; Singh, M.; Brennan, K.; Moyer, B.R.; Nichols, A.

    1984-07-01

    Generator produced gallium-68 is a convenient useful radionuclide for positron emission tomography (PET) investigations. Gallium-68 labeled platelets and low density lipoproteins would be useful agents for PET studies of thrombosis and atherosclerosis in cardiovascular disease. To label these agents with Ga-68, we have studied the effects of trace metal contaminants in 1 N HCl elutions of Ga-68 from germanium-68 absorbed on a stannic oxide column. Studies were conducted on the formation and characteristics of Ga-68 complexes with the ligands 8-hydroxyquinoline, tropolone, and mercaptopyridine-N-oxide (MPO). Various parameters such as pH, buffers, concentration of ligand, and incubation or stability with time were investigated. High performance liquid chromatography and instant thin layer chromatography were used to analyze the Ga-68 ligand preparations. Platelets separated from human, dog, and rabbit plasma were incubated with the Ga-68 complexes and the labeling yields and in vivo survival were determined. The accumulation of the platelets in the ballon catheter scraped aorta of the rabbit was determined by PET imaging studies, tissue counting in a gamma well counter, and en-face autoradiography of the arterial wall. The Ga-68 complexes of MPO gave 40 to 60% labeling efficiency of rabbit platelets which accumulated about fourfold more in the damaged aorta compared to the normal. Gallium-68 was attached to low density lipoproteins (LDL) with the bifunctional chelate of DTPA. Low pressure gel column chromatography and HPLC were used to preparatively separate and analyze the Ga-68 LDL for uptake studies in the healing endothelium of the scraped aorta rabbit model. The Ga-68 LDL labeling yield was 80 to 85% with a radiochemical purity 90 to 95%. 22 references, 10 figures, 4 tables.

  16. A gallium phosphide high-temperature bipolar junction transistor

    NASA Technical Reports Server (NTRS)

    Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.

    1981-01-01

    Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

  17. High growth speed of gallium nitride using ENABLE-MBE

    NASA Astrophysics Data System (ADS)

    Williams, J. J.; Fischer, A. M.; Williamson, T. L.; Gangam, S.; Faleev, N. N.; Hoffbauer, M. A.; Honsberg, C. B.

    2015-09-01

    Films of gallium nitride were grown at varying growth speeds, while all other major variables were held constant. Films grown determine the material impact of the high flux capabilities of the unique nitrogen plasma source ENABLE. Growth rates ranged from 13 to near 60 nm/min. X-ray ω scans of GaN (0002) have FWHM in all samples less than 300 arc sec. Cathodoluminescence shows radiative recombination for all samples at the band edge. In general material quality overall is high with slight degradation as growth speeds increase to higher rates.

  18. Gallium uptake in tryptophan-related pulmonary disease

    SciTech Connect

    Kim, S.M.; Park, C.H.; Intenzo, C.M.; Patel, R. )

    1991-02-01

    We describe a patient who developed fever, fatigue, muscle weakness, dyspnea, skin rash, and eosinophilia after taking high doses of tryptophan for insomnia for two years. A gallium-67 scan revealed diffuse increased uptake in the lung and no abnormal uptake in the muscular distribution. Bronchoscopy and biopsy confirmed inflammatory reactions with infiltration by eosinophils, mast cells, and lymphocytes. CT scan showed an interstitial alveolar pattern without fibrosis. EMG demonstrated diffuse myopathy. Muscle biopsy from the right thigh showed an inflammatory myositis with eosinophilic and lymphocytic infiltrations.

  19. Microwave dielectric constants of silicon, gallium arsenide, and quartz

    SciTech Connect

    Seeger, K.

    1988-06-01

    For a determination of the dielectric constants epsilon of semiconductors, a microwave transmission interference method has been applied. For the first time, a calculation is presented which yields the full interference spectrum, not only the position of the extremal points. A comparison of the theoretical and experimental spectra results in a higher precision than previously obtained. A metal evaporation of the sample faces which are in contact with the waveguide walls turns out to be very important. Relative dielectric constants of 11.6 for silicon, 12.8 for gallium arsenide, and 4.6 for crystalline quartz, all +- 0.05, have been obtained.

  20. Improved performance design of gallium arsenide solar cells for space

    NASA Technical Reports Server (NTRS)

    Parekh, R. H.; Barnett, A. M.

    1984-01-01

    An improved design, shallow junction heteroface, n-p, gallium arsenide solar cell for space applications is reported, with a predicted AM0 efficiency in the 21.9 to 23.0 percent range. The optimized n-p structure, while slightly more efficient, has the added advantage of being less susceptible to radiation-induced degradation by virtue of this thin top junction layer. Detailed spectral response curves and an analysis of the loss mechanisms are reported. The details of the design are readily measurable. The optimized designs were reached by quantifying the dominant loss mechanisms and then minimizing them by using computer simulations.

  1. Testing of gallium arsenide solar cells on the CRRES vehicle

    NASA Technical Reports Server (NTRS)

    Trumble, T. M.

    1985-01-01

    A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage.

  2. Visible light metasurfaces based on gallium nitride high contrast gratings

    NASA Astrophysics Data System (ADS)

    Wang, Zhenhai; He, Shumin; Liu, Qifa; Wang, Wei

    2016-05-01

    We propose visible-light metasurfaces (VLMs) capable of serving as lens and beam deflecting element based on gallium nitride (GaN) high contrast gratings (HCGs). By precisely manipulating the wavefront of the transmitted light, we theoretically demonstrate an HCG focusing lens with transmissivity of 86.3%, and a VLM with beam deflection angle of 6.09° and transmissivity as high as 91.4%. The proposed all-dielectric metasurfaces are promising for GaN-based visible light-emitting diodes (LEDs), which would be robust and versatile for controlling the output light propagation and polarization, as well as enhancing the extraction efficiency of the LEDs.

  3. Electronic structure and properties of layered gallium telluride

    NASA Astrophysics Data System (ADS)

    Shenoy, U. Sandhya; Gupta, Uttam; Narang, Deepa S.; Late, Dattatray J.; Waghmare, Umesh V.; Rao, C. N. R.

    2016-05-01

    Layer-dependent electronic structure and properties of gallium monochalcogenides, GaX where X = S, Se, Te, have been investigated using first-principles calculations based on various functionals, with a motivation to assess their use in photocatalytic water splitting. Since hydrogen evolution by water splitting using visible light provides a promising way for solar energy conversion, both theoretical and experimental studies have been carried out on the photochemical hydrogen evolution by GaTe. We also present the Raman spectra of GaTe examined by both theory and experiment.

  4. Frequency conversion in free-standing periodically oriented gallium nitride

    NASA Astrophysics Data System (ADS)

    Brown, Christopher G.; Bowman, Steven R.; Hite, Jennifer K.; Freitas, Jaime A.; Kub, Francis J.; Eddy, Charles R.; Vurgaftman, Igor; Meyer, Jerry R.; Leach, Jacob H.; Udwary, Kevin

    2016-03-01

    Gallium nitride's (GaN) material properties of broadband transparency, high thermal conductivity, and wide-band gap make it a promising candidate for high-power frequency conversion devices. The strong internal polarization of GaN leads to large second-order nonlinearity, but conventional phase matching is prevented due to weak birefringence. To obtain efficient nonlinear optic frequency conversion, patterned inversion growth has been developed to induce quasiphase matching (QPM). We have fabricated and tested periodically oriented GaN (PO-GaN) devices to obtain QPM frequency conversion. This report discusses our recent measurements of second harmonic generation resonances for these devices.

  5. Gallium-doped germanium, evaluation of photoconductors, part 1

    NASA Technical Reports Server (NTRS)

    Moore, W. J.

    1979-01-01

    Gallium-doped germanium far infrared detectors were evaluated at low temperatures and low background simulating the space environment. Signal and noise characteristics were determined for detector temperatures in the 2K to 4K range. Optimum performance occurs at about 2.5K for all devices tested. The minimum average NEP in the 40-130 micron region was found to be approximately 4 x 10 to the minus 17th power watt Hz(-1/2) at a frequency of 1 Hz.

  6. PLUTONIUM ALLOYS

    DOEpatents

    Chynoweth, W.

    1959-06-16

    The preparation of low-melting-point plutonium alloys is described. In a MgO crucible Pu is placed on top of the lighter alloying metal (Fe, Co, or Ni) and the temperature raised to 1000 or 1200 deg C. Upon cooling, the alloy slug is broke out of the crucible. With 14 at. % Ni the m.p. is 465 deg C; with 9.5 at. % Fe the m.p. is 410 deg C; and with 12.0 at. % Co the m.p. is 405 deg C. (T.R.H.) l6262 l6263 ((((((((Abstract unscannable))))))))

  7. Aluminum alloy

    NASA Technical Reports Server (NTRS)

    Blackburn, Linda B. (Inventor); Starke, Edgar A., Jr. (Inventor)

    1989-01-01

    This invention relates to aluminum alloys, particularly to aluminum-copper-lithium alloys containing at least about 0.1 percent by weight of indium as an essential component, which are suitable for applications in aircraft and aerospace vehicles. At least about 0.1 percent by weight of indium is added as an essential component to an alloy which precipitates a T1 phase (Al2CuLi). This addition enhances the nucleation of the precipitate T1 phase, producing a microstructure which provides excellent strength as indicated by Rockwell hardness values and confirmed by standard tensile tests.

  8. Modified silicon-germanium alloys with improved performance. [thermoelectric material

    NASA Technical Reports Server (NTRS)

    Pisharody, R. K.; Garvey, L. P.

    1978-01-01

    This paper discusses the results of a program on the modification of silicon-germanium alloys by means of small extraneous material additions in order to improve their figures-of-merit. A review of the properties that constitute the figure-of-merit indicates that it is the relatively high thermal conductivity of silicon-germanium alloys that is responsible for their low values of figure-of-merit. The intent of the effort discussed in this paper is therefore the reduction of the thermal conductivity of silicon-germanium alloys by minor alloy additions and/or changes in the basic structure of the material. Because Group III and V elements are compatible with silicon and germanium, the present effort in modifying silicon-germanium alloys has concentrated on additions of gallium phosphide. A significant reduction in thermal conductivity, approximately 40 to 50 percent, has been demonstrated while the electrical properties are only slightly affected as a result. The figure-of-merit of the resultant material is enhanced over that of silicon-germanium alloys and when fully optimized is potentially better than that of any other presently available thermoelectric material.

  9. BRAZING ALLOYS

    DOEpatents

    Donnelly, R.G.; Gilliland, R.G.; Slaughter, G.M.

    1962-02-20

    A brazing alloy is described which, in the molten state, is characterized by excellent wettability and flowability and is capable of forming a corrosion-resistant brazed joint. At least one component of said joint is graphite and the other component is a corrosion-resistant refractory metal. The brazing alloy consists essentially of 40 to 90 wt % of gold, 5 to 35 wt% of nickel, and 1 to 45 wt% of tantalum. (AEC)

  10. COATED ALLOYS

    DOEpatents

    Harman, C.G.; O'Bannon, L.S.

    1958-07-15

    A coating is described for iron group metals and alloys, that is particularly suitable for use with nickel containing alloys. The coating is glassy in nature and consists of a mixture containing an alkali metal oxide, strontium oxide, and silicon oxide. When the glass coated nickel base metal is"fired'' at less than the melting point of the coating, it appears the nlckel diffuses into the vitreous coating, thus providing a closely adherent and protective cladding.

  11. Gallium-67 citrate imaging in underground coal miners

    SciTech Connect

    Kanner, R.E.; Barkman, H.W. Jr.; Rom, W.N.; Taylor, A.T. Jr.

    1985-01-01

    Twenty-two underground coal workers with 27 or more years of coal dust exposure were studied with gallium-67 citrate (Ga-67) imaging. Radiographic evidence of coal workers indicates that pneumoconiosis (CWP) was present in 12 subjects. The Ga-67 scan was abnormal in 11 of 12 with, and 9 of 10 without, CWP. The Ga-67 uptake index was significantly correlated with total dust exposure (p less than 0.01) and approached significant correlation with the radiographic profusion of the nodules (0.10 greater than p greater than 0.05). There was no correlation between Ga-67 uptake and spirometric function, which was normal in this group of patients; furthermore, increased lung uptake of gallium did not indicate a poor prognosis in subjects no longer exposed to coal dust. While coal dust exposure may be associated with positive Ga-67 lung scan in coal miners with many years of coal dust exposure, the scan provided no information not already available from a careful exposure history and a chest radiograph. Since Ga-67 scanning is a relatively expensive procedure the authors would recommend that its use in subjects with asymptomatic CWP be limited to an investigative role and not be made part of a routine evaluation.

  12. Multiscale modelling of gallium induced embrittlement in aluminium

    NASA Astrophysics Data System (ADS)

    Bhogireddy, Venkata Sai Pavan Kumar; Todorova, Mira; Spatschek, Robert; Neugebauer, Jörg

    Liquid metal embrittlement is a degradation phenomenon in which a solid metal undergoes brittle failure when it is stressed while in contact with a liquid metal. The transition from ductile to brittle metal failure manifests itself by rapid crack propagations which reduces the elongation to failure ratio. Combining density functional theory calculations with continuum methods, we study the liquid metal embrittlement of aluminium in contact with gallium. Comparing ab initio calculated energies for a Σ 3 and a Σ 5 Al grain boundary and their corresponding surface energies in the presence and absence of Ga, we identify critical Ga concentrations which result in a weakening of the mechanical strength of aluminium. Parametrising the DFT results in continuum model we obtain the concentration as a function of the strain in the system. In a final step we extend this approach and compute the stress field induced by cracks in bulk and at grain boundaries. The stress field explains the large segregation of gallium atoms at the crack tip and the crack tip's subsequent propagation.

  13. Investigation of Structural Phase Transitions on Wurtzite Gallium Nitride Surfaces

    NASA Astrophysics Data System (ADS)

    Chen, Tianjiao; Chinchore, Abhijit; Liu, Yinghao; Wang, Kangkang; Lin, Wenzhi; Smith, Arthur

    2009-03-01

    Surface structures of wurtzite gallium nitride (w-GaN) have been investigated previously,[1][2] and it is well known that above 300K there exist order-disorder phase transitions. For N-polar w-GaN (000-1) at 300K, a family of surface reconstructions occurs, including 1x1, 3x3, 6x6, and c(6x12). Not much is known, however, about what happens to these structures as they are cooled below 300K. We have recently developed a new epitaxy/analysis system, including a sample stage which can be both heated and cooled. The N-polar w-GaN surfaces are prepared using rf N-plasma-assisted molecular beam epitaxy, and monitored in-situ using reflection high energy electron diffraction (RHEED). The approach is to monitor the [11-20] and [10-10] RHEED diffractions during cryogenic cooling, starting with the 1x1 or 3x3 structures. A critical issue to explore is the interrelationship between surface gallium concentration and structural deformation. This study may provide the missing link to new reconstructions of w-GaN recently observed using LT scanning tunneling microscopy.[3] This work is supported by NSF (Grant No. 0730257). [1] A. R. Smith et al., Phys. Rev. Lett. 79, 3934 (1997). [2] A. R. Smith et al., Surface Science 423, 70 (1999). [3] D. Acharya, S.-W. Hla et al., unpublished.

  14. Gold and Gallium Nanoparticle Growth on Silicon (100)

    NASA Astrophysics Data System (ADS)

    Madsen, Rees; Brown, Hunter L.; Ames, Sadie; Rasmussen, J. Leland; Tobler, Samuel

    2014-03-01

    Nanoparticles are used for various applications in today's research. Some researcher's interests involve using the nanoparticles to grow silicon nanowires on a silicon substrate. Before growing nanowires can be accomplished a study must be made of the formation of nanoparticles. Most often the metal used to make the nanoparticles is gold. In this study both gold and gallium were used to make the nanoparticles, by thermal evaporation. The gold and gallium nanoparticles were grown on silicon (100). Between one to three monolayers of material was added to the substrate, with the particle sizes ranging from 0.5 microns to 3 microns in diameter. Densities of nanoparticles varied based on the time of growth and on the intensity of the source. The variable sizes were seen with sample temperatures between 700 C and 900 C measured using a disappearing filament optical pyrometer. The growth process occurred at pressures below 3e-7 Torr. This presentation will summarize the growth process and show the similarities and differences between the two metals.

  15. Low temperature solid-state synthesis of nanocrystalline gallium nitride

    SciTech Connect

    Wang, Liangbiao; Shi, Liang; Li, Qianwen; Si, Lulu; Zhu, Yongchun; Qian, Yitai

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ► GaN nanocrystalline was prepared via a solid-state reacion at relatively low temperature. ► The sizes and crystallinities of the GaN samples obtained at the different temperatures are investigated. ► The GaN sample has oxidation resistance and good thermal stability below 1000 °C. -- Abstract: Nanocrystalline gallium nitride was synthesized by a solid-state reaction of metallic magnesium powder, gallium sesquioxide and sodium amide in a stainless steel autoclave at a relatively low temperature (400–550 °C). The structures and morphologies of the obtained products were derived from X-ray powder diffraction (XRD) and transmission electron microscopy (TEM). XRD patterns indicated that the products were hexagonal GaN (JCPDS card no. 76-0703). The influence of reaction temperature on size of the products was studied by XRD and TEM. Furthermore, the thermal stability and oxidation resistance of the nanocrystalline GaN were also investigated. It had good thermal stability and oxidation resistance below 800 °C in air.

  16. Experimental investigation of electron transport properties of gallium nitride nanowires

    NASA Astrophysics Data System (ADS)

    Motayed, Abhishek; Davydov, Albert V.; Mohammad, S. N.; Melngailis, John

    2008-07-01

    We report transport properties of gallium nitride (GaN) nanowires grown using direct reaction of ammonia and gallium vapor. Reliable devices, such as four-terminal resistivity measuring structures and field-effect transistors, were realized by dielectrophoretically aligning the nanowires on an oxidized silicon substrate and subsequently applying standard microfabrication techniques. Room-temperature resistivity in the range of (1.0-6.2)×10-2 Ω cm was obtained for the nanowires with diameters ranging from 200 to 90 nm. Temperature-dependent resistivity and mobility measurements indicated the possible sources for the n-type conductivity and high background charge carrier concentration in these nanowires. Specific contact resistance in the range of 5.0×10-5 Ω cm2 was extracted for Ti/Al/Ti/Au metal contacts to GaN nanowires. Significant reduction in the activation energy of the dopants at low temperatures (<200 K) was observed in the temperature-dependent resistivity measurement of these nanowires, which is linked to the onset of degeneracy. Temperature-dependent field-effect mobility measurements indicated that the ionized impurity scattering is the dominant mechanism in these nanowires at all temperatures.

  17. Exciton pumping across type-I gallium chalcogenide heterojunctions

    NASA Astrophysics Data System (ADS)

    Cai, Hui; Kang, Jun; Sahin, Hasan; Chen, Bin; Suslu, Aslihan; Wu, Kedi; Peeters, Francois; Meng, Xiuqing; Tongay, Sefaattin

    2016-02-01

    Quasi-two-dimensional gallium chalcogenide heterostructures are created by transferring exfoliated few-layer GaSe onto bulk GaTe sheets. Luminescence spectroscopy measurements reveal that the light emission from underlying GaTe layers drastically increases on heterojunction regions where GaSe layers make contact with the GaTe. Density functional theory (DFT) and band offset calculations show that conduction band minimum (CBM) (valance band maximum (VBM)) values of GaSe are higher (lower) in energy compared to GaTe, forming type-I band alignment at the interface. Consequently, GaSe layers provide photo-excited electrons and holes to GaTe sheets through relatively large built-in potential at the interface, increasing overall exciton population and light emission from GaTe. Observed results are not specific to the GaSe/GaTe system but observed on GaS/GaSe heterolayers with type-I band alignment. Observed experimental findings and theoretical studies provide unique insights into interface effects across dissimilar gallium chalcogenides and offer new ways to boost optical performance by simple epitaxial coating.

  18. Study on natural convection capability of liquid gallium for passive decay heat removal system (PDHRS)

    SciTech Connect

    Kang, S.; Ha, K. S.; Lee, S. W.; Park, S. D.; Kim, S. M.; Seo, H.; Kim, J. H.; Bang, I. C.

    2012-07-01

    The safety issues of the SFRs are important due to the fact that it uses sodium as a nuclear coolant, reacting vigorously with water and air. For that reason, there are efforts to seek for alternative candidates of liquid metal coolants having excellent heat transfer property and to adopt improved safety features to the SFR concepts. This study considers gallium as alternative liquid metal coolant applicable to safety features in terms of chemical activity issue of the sodium and aims to experimentally investigate the natural convection capability of gallium as a feasibility study for the development of gallium-based passive safety features in SFRs. In this paper, the design and construction of the liquid gallium natural convection loop were carried out. The experimental results of heat transfer coefficient of liquid gallium resulting in heat removal {approx}2.53 kW were compared with existing correlations and they were much lower than the correlations. To comparison of the experimental data with computer code analysis, gallium property code was developed for employing MARS-LMR (Korea version of RELAP) based on liquid gallium as working fluid. (authors)

  19. Byproduct Metal Availability Constrained by Dynamics of Carrier Metal Cycle: The Gallium-Aluminum Example.

    PubMed

    Løvik, Amund N; Restrepo, Eliette; Müller, Daniel B

    2016-08-16

    Future availability of byproduct metals is not limited by geological stocks, but by the rate of primary production of their carrier metals, which in turn depends on the development of their in-use stocks, the product lifetimes, and the recycling rates. This linkage, while recognized conceptually in past studies, has not been adequately taken into account in resource availability estimates. Here, we determine the global supply potential for gallium up to 2050 based on scenarios for the global aluminum cycle, and compare it with scenarios for gallium demand derived from a dynamic model of the gallium cycle. We found that the gallium supply potential is heavily influenced by the development of the in-use stocks and recycling rates of aluminum. With current applications, a shortage of gallium is unlikely by 2050. However, the gallium industry may need to introduce ambitious recycling- and material efficiency strategies to meet its demand. If in-use stocks of aluminum saturate or decline, a shift to other gallium sources such as zinc or coal fly ash may be required. PMID:27400378

  20. High-surface Thermally Stable Mesoporous Gallium Phosphates Constituted by Nanoparticles as Primary Building Blocks

    SciTech Connect

    V Parvulescu; V Parvulescu; D Ciuparu; C Hardacre; H Garcia

    2011-12-31

    In constant, search for micro/mesoporous materials, gallium phosphates, have attracted continued interest due to the large pore size reported for some of these solids in comparison with analogous aluminum phosphates. However up to now, the porosity of gallium phosphates collapsed upon template removal or exposure to the ambient moisture. In the present work, we describe high-surface thermally stable mesoporous gallium phosphates synthesized from gallium propoxide and PCl{sub 3} and different templating agents such as amines (dipropylamine, piperidine and aminopiperidine) and quaternary ammonium salts (C{sub 16}H{sub 33}(CH{sub 3})3NBr and C{sub 16}PyCl). These highly reactive precursors have so far not been used as gallium and phosphate sources for the synthesis of gallophosphates. Conceptually, our present synthetic procedure is based on the fast formation of gallium phosphate nanoparticles via the reaction of gallium propoxide with PCl{sub 3} and subsequent construction of the porous material with nanoparticles as building blocks. The organization of the gallophosphate nanoparticles in stable porous structures is effected by the templates. Different experimental procedures varying the molar composition of the sol-gel, pH and the pretreatment of gallium precursor were assayed, most of them leading to satisfactory materials in terms of thermal stability and porosity. In this way, a series of gallium phosphates with surface are above 200 m{sup 2} g{sup -1}, and narrow pore size from 3 to 6 nm and remarkable thermal stability (up to 550 C) have been prepared. In some cases, the structure tends to show some periodicity and regularity as determined by XRD. The remarkable stability has allowed us to test the catalytic activity of gallophosphates for the aerobic oxidation of alkylaromatics with notable good results. Our report reopens the interest for gallophosphates in heterogeneous catalysis.

  1. A hypothesis for anti-nanobacteria effects of gallium with observations from treating kidney disease.

    PubMed

    Eby, George A

    2008-10-01

    Nanobacteria, 100-fold smaller than common bacteria, have been purported to exist in urine, and by precipitating calcium and other minerals into carbonate apatite around themselves, induce the formation of surrounding kidney stones. Nanobacteria-like structures have also been shown in blood, within arteries, aortic aneurysms, and cardiac valves. Gallium has antibiotic properties to iron-dependent bacteria and has potent anti-inflammatory, anticancer and anti-hypercalcemic properties, and it readily reverses osteoporosis. It was hypothesized that gallium nitrate might have benefit in treating kidney stones. Gallium nitrate (120mg gallium) was mixed with water making two liters of a gallium mineral water drink to treat chronic, treatment-resistant kidney stone pain and urinary tract bleeding in a 110 pound woman. On the third day of gallium mineral water treatment, the urine appeared snow white, thick (rope-like) and suggestive of a calcific crystalline nature. After release of the white urine, the urine returned to normal in color, viscosity and pH, kidney pain was no longer present, and there was no further evidence of blood in the urine. There were no treatment side effects or sequela. For a one year observation period thereafter, no kidney stones, white urine, kidney or urinary tract pain or blood in the urine was noted. The hypothetical susceptibility of nanobacteria to gallium treatment also suggests application to atherosclerosis and other diseases. Although some support for gallium in treating kidney stones is presented, this hypothesis is built upon another hypothesis, is extremely speculative, and alternative explanations for the white urine exist. Further research into gallium's effects on kidney disease and other nanobacteria-induced diseases such as cardiovascular diseases is suggested. PMID:18579317

  2. Electrodeposition of crystalline GaAs on liquid gallium electrodes in aqueous electrolytes.

    PubMed

    Fahrenkrug, Eli; Gu, Junsi; Maldonado, Stephen

    2013-01-01

    Crystalline GaAs (c-GaAs) has been prepared directly through electroreduction of As(2)O(3) dissolved in an alkaline aqueous solution at a liquid gallium (Ga(l)) electrode at modest temperatures (T ≥ 80 °C). Ga(l) pool electrodes yielded consistent electrochemical behavior, affording repetitive measurements that illustrated the interdependences of applied potential, concentration of dissolved As(2)O(3), and electrodeposition temperature on the quality of the resultant c-GaAs(s). Raman spectra indicated the composition of the resultant film was strongly dependent on both the electrodeposition temperature and dissolved concentration of As(2)O(3) but not to the applied bias. For electrodepositions performed either at room temperature or with high (≥0.01 M) concentrations of dissolved As(2)O(3), Raman spectra of the electrodeposited films were consistent with amorphous As(s). X-ray diffractograms of As(s) films collected after thermal annealing indicated metallurgical alloying occurred only at temperatures in excess of 200 °C. Optical images and Raman spectra separately showed the composition of the as-electrodeposited film in dilute (≤0.001 M) solutions of dissolved As(2)O(3)(aq) was pure c-GaAs(s) at much lower temperatures than 200 °C. Diffractograms and transmission electron microscopy performed on as-prepared films confirmed the identity of c-GaAs(s). The collective results thus provide the first clear demonstration of an electrochemical liquid-liquid-solid (ec-LLS) process involving a liquid metal that serves simultaneously as an electrode, a solvent/medium for crystal growth, and a coreactant for the synthesis of a polycrystalline semiconductor. The presented data serve as impetus for the further development of the ec-LLS process as a controllable, simple, and direct route for technologically important optoelectronic materials such as c-GaAs(s). PMID:23265429

  3. Dioxime kinetic enhancer for solvent extraction of gallium from basic aqueous solutions thereof

    SciTech Connect

    Gefvert, D.L.

    1989-08-08

    This patent describes an improvement in a process for recovering gallium values contained in a basic aqueous solution by liquid/liquid extraction thereof comprising contacting the basic aqueous solution with a water-immiscible, organic phase comprising a substituted hydroxy-quinoline dissolved in an organic solvent therefor, whereby gallium is extracted into the organic phase; separating the organic phase from the basic aqueous phase; and recovering gallium from the separated organic phase. The improvement comprises: the organic phase further comprising dissolved therein an organic dioxime compound.

  4. Gallium scintigraphy for diagnosis of septic arthritis and osteomyelitis in children

    SciTech Connect

    Borman, T.R.; Johnson, R.A.; Sherman, F.C.

    1986-05-01

    Thirty-four children with presumptive acute osteomyelitis or septic arthritis underwent early gallium-67 citrate scintigraphy and have been retrospectively reviewed. Diagnostic accuracy using this technique was 91%. Gallium-67 citrate is a more reliable radiopharmaceutical agent for the detection of selected acute musculoskeletal infections than either technetium methylene diphosphonate or indium-111. However, the radiation dosage from gallium is higher than from other radiopharmaceutical agents, and the authors would recommend its use only in cases where the diagnosis cannot be made on the basis of clinical, laboratory, or plain roentgenographic criteria.

  5. Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

    DOE PAGESBeta

    Jacobs, Benjamin W.; Ayres, Virginia M.; Stallcup, Richard E.; Hartman, Alan; Tupta, Mary Ann; Baczewski, Andrew David; Crimp, Martin A.; Halpern, Joshua B.; He, Maoqi; Shaw, Harry C.

    2007-10-19

    Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

  6. Microscopic properties of liquid gallium from quasi-elastic neutron scattering experiments

    NASA Astrophysics Data System (ADS)

    Blagoveshchenskii, N. M.; Novikov, A. G.; Puchkov, A. V.; Savostin, V. V.

    2014-11-01

    The results of the neutron diffraction study of liquid gallium on the DIN-2PI spectrometer (IBR-2 reactor, JINR, Dubna) have been discussed. The analysis of the experimental data has provided temperature dependences of diffusion and relaxation characteristics of liquid gallium in the temperature range of 313-793 K. It has been found that an increase in the temperature is accompanied by the gradual deviation of the temperature dependence of the self-diffusion coefficient from the known dependences obtained from the data on viscosity. Such a behavior is explained by the beginning clustering of liquid gallium induced by the prevailing covalent character of interatomic bonds.

  7. Lysosomal accumulation of gallium-67 in Morris hepatoma-7316A and Shionogi mammary carcinoma-115.

    PubMed

    Takeda, S; Okuyama, S; Takusagawa, K; Matsuzawa, T

    1978-04-01

    Intracellular localization of gallium-67 was investigated in Morris hepatoma-7316A and Shionogi mammary carcinoma-115 cells by the cell fractionation method 48 hr after an intraperitoneal injection of the nuclide. When lysosomes were purified from both tumors by discontinuous sucrose density gradient centrifugation, they had a strikingly high relative specific activity of the nuclide. From these results it was confirmed that gallium-67 is concentrated most specifically in the lysosomes of both tumor cells, which consist chiefly of phagolysosomes and can engulf only limited amount of foreign materials such as Triton and gallium-67. PMID:210077

  8. Identification of a physical metallurgy surrogate for the plutonium—1 wt. % gallium alloy

    NASA Astrophysics Data System (ADS)

    Gibbs, Frank E.; Olson, David L.; Hutchinson, William

    2000-07-01

    Future plutonium research is expected to be limited due to the downsizing of the nuclear weapons complex and an industry focus on environmental remediation and decommissioning of former manufacturing and research facilities. However, the need to further the understanding of the behavior of plutonium has not diminished. Disposition of high level residues, long-term storage of wastes, and certification of the nuclear stockpile through the Stockpile Stewardship Program are examples of the complex issues that must be addressed. Limited experimental facilities and the increasing cost of conducting plutonium research provide a strong argument for the development of surrogate materials. The purpose of this work was to identify a plutonium surrogate based on fundamental principles such as electronic structure, and then to experimentally demonstrate its viability.

  9. Elevated temperature aluminum alloys

    NASA Technical Reports Server (NTRS)

    Meschter, Peter (Inventor); Lederich, Richard J. (Inventor); O'Neal, James E. (Inventor)

    1989-01-01

    Three aluminum-lithium alloys are provided for high performance aircraft structures and engines. All three alloys contain 3 wt % copper, 2 wt % lithium, 1 wt % magnesium, and 0.2 wt % zirconium. Alloy 1 has no further alloying elements. Alloy 2 has the addition of 1 wt % iron and 1 wt % nickel. Alloy 3 has the addition of 1.6 wt % chromium to the shared alloy composition of the three alloys. The balance of the three alloys, except for incidentql impurities, is aluminum. These alloys have low densities and improved strengths at temperatures up to 260.degree. C. for long periods of time.

  10. Gallium-67 scintigraphy, bronchoalveolar lavage, and pathologic changes in patients with pulmonary sarcoidosis

    SciTech Connect

    Abe, S.; Munakata, M.; Nishimura, M.; Tsuneta, Y.; Terai, T.; Nakano, I.; Ohsaki, Y.; Kawakami, Y.

    1984-05-01

    The intensity of gallium-67 scintiscans, lymphocyte counts in bronchoalveolar lavage fluid, and pathologic changes were studied in 26 patients with untreated pulmonary sarcoidosis. Noncaseating granulomas were recognized with significantly greater frequency in stage 2 (80 percent; 8/10 cases) than in stage 1 (43 percent; 6/14 cases). Alveolitis showed little relation to the roentgenographic stage. There was a strong correlation between the intensity of gallium uptake in pulmonary parenchyma and the detection rate of granuloma; however, the detection rate of alveolitis was not statistically different from the intensity of gallium uptake. A highly significant correlation was revealed between the lymphocyte counts in bronchoalveolar lavage fluid and the intensity of alveolitis. These observations suggest that the gallium uptake reflects mainly the presence of granuloma, and the lymphocyte count in bronchoalveolar lavage fluid reflects the intensity of alveolitis in patients with pulmonary sarcoidosis.

  11. Process for producing gallium-containing solution from the aluminum smelting dust

    SciTech Connect

    Era, A.; Matsui, S.; Ikeda, H.

    1988-03-01

    A process is described for producing a gallium-containing solution from aluminum smelting dust comprising leaching aluminum smelting dust with a mineral acid selected from the group consisting of sulfuric acid, hydrochloric acid and nitric acid, and adding an oxidizing agent to the aluminum smelting dust at the time of leaching to preferentially leach and extract gallium from the aluminum smelting dust without extracting aluminum from the aluminum smelting dust. The oxidizing agent is selected from the group consisting of potassium permanganate, manganese dioxide, hydrogen peroxide, ozone, potassium chromate, potassium dichromate, ammonium persulfate, sodium hydrochlorite, sodium chlorite and sodium chlorate. The leached aluminum smelting dust is filtered to obtain a gallium-containing solution of dissolved gallium.

  12. Homogeneous dispersion of gallium nitride nanoparticles in a boron nitride matrix by nitridation with urea.

    PubMed

    Kusunose, Takafumi; Sekino, Tohru; Ando, Yoichi

    2010-07-01

    A Gallium Nitride (GaN) dispersed boron nitride (BN) nanocomposite powder was synthesized by heating a mixture of gallium nitrate, boric acid, and urea in a hydrogen atmosphere. Before heat treatment, crystalline phases of urea, boric acid, and gallium nitrate were recognized, but an amorphous material was produced by heat treatment at 400 degrees C, and then was transformed into GaN and turbostratic BN (t-BN) by further heat treatment at 800 degrees C. TEM obsevations of this composite powder revealed that single nanosized GaN particles were homogeneously dispersed in a BN matrix. Homogeneous dispersion of GaN nanoparticles was thought to be attained by simultaneously nitriding gallium nitrate and boric acid to GaN and BN with urea. PMID:21128417

  13. Preliminary survey report: control technology for gallium arsenide processing at Hewlett Packard, San Jose, California

    SciTech Connect

    Lenihan, K.L.

    1987-04-01

    A walk-through survey of the Hewlett Packard Company facility in San Jose, California, was prompted by an interest in the use of gallium arsenide as an alternative to silicon for the semiconductor industry. This facility produced gallium-arsenide and gallium phosphide Potential hazards existed from solvents, acids, and gases employed in wafer production. Some of the solvents included fluorocarbon compounds, xylene, and 1,1,1-trichloroethane Arsine, phosphine, hydrogen, and silane gases were used in the production processes. Worker exposures to gallium arsenide or arsenic dust were lower during the cleaning operation than they had been in other similar facilities, perhaps due to the small size of the crystal pullers used at this particular facility. According to the author, this facility is a possible candidate for an in-depth industry survey, but may not be representative of the entire industry.

  14. Empyema of the gallbladder detected by gallium scan and abdominal ultrasonography

    SciTech Connect

    Garcia, O.M.; Kovac, A.; Plauche, W.E.

    1981-08-01

    A case history of patient with a abnormal gallium uptake and sonogram in the region of the gallbladder is described. The abnormality was interpreted as empyema of the gallbladder and later proven surgically. A liver-spleen scan was normal except for slight prominence of the hilar structures. Gallium citrate Ga-67 scans done at 24 and 48 hours showed a persistent area of increased tracer localization around the gallbladder with a central clear zone in the latter scan. Ultrasonography revealed poor definition and slight thickening of the gallbladder wall. Because of the lack of specificity of gallium scans, the combination of ultrasonic imaging and gallium uptake scans appears much superior in diagnostic efficiency than either of the two alone. The sequence of performing these two examinations does not seem to be critical though it was prefered that the scintigraphy precede the sonography.

  15. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Banski, M.; Misiewicz, J.; Lecerf, C.; Marie, P.; Cardin, J.; Portier, X.

    2010-09-01

    Gallium oxide and more particularly β-Ga2O3 matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

  16. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

    SciTech Connect

    Podhorodecki, A.; Banski, M.; Misiewicz, J.; Lecerf, C.; Marie, P.; Cardin, J.; Portier, X.

    2010-09-15

    Gallium oxide and more particularly {beta}-Ga{sub 2}O{sub 3} matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

  17. Ultrasonic cavitation of molten gallium: formation of micro- and nano-spheres.

    PubMed

    Kumar, Vijay Bhooshan; Gedanken, Aharon; Kimmel, Giora; Porat, Ze'ev

    2014-05-01

    Pure gallium has a low melting point (29.8°C) and can be melted in warm water or organic liquids, thus forming two immiscible liquid phases. Irradiation of this system with ultrasonic energy causes cavitation and dispersion of the molten gallium as microscopic spheres. The resultant spheres were found to have radii range of 0.2-5 μm and they do not coalesce upon cessation of irradiation, although the ambient temperature is well above the m.p. of gallium. It was found that the spheres formed in water are covered with crystallites of GaO(OH), whereas those formed in organic liquids (hexane and n-dodecane) are smooth, lacking such crystallites. However, Raman spectroscopy revealed that the spheres formed in organic liquids are coated with a carbon film. The latter may be the factor preventing their coalescence at temperatures above the m.p. of gallium. PMID:24296070

  18. Radiology of pulmonary disease. Chest radiography, computed tomography, and gallium scanning

    SciTech Connect

    Golden, J.A.; Sollitto, R.A.

    1988-09-01

    A review of the radiologic manifestations of AIDS pulmonary diseases, with an emphasis on the utility of gallium scanning in the context of the normal or equivocal chest x-ray, is presented.99 references.

  19. Gallium(iii) and iron(iii) complexes of quinolone antimicrobials.

    PubMed

    Mjos, Katja Dralle; Cawthray, Jacqueline F; Polishchuk, Elena; Abrams, Michael J; Orvig, Chris

    2016-08-16

    Iron is an essential nutrient for many microbes. According to the "Trojan Horse Hypothesis", biological systems have difficulties distinguishing between Fe(3+) and Ga(3+), which constitutes the antimicrobial efficacy of the gallium(iii) ion. Nine novel tris(quinolono)gallium(iii) complexes and their corresponding iron(iii) analogs have been synthesized and fully characterized. Quinolone antimicrobial agents from three drug generations were used in this study: ciprofloxacin, enoxacin, fleroxacin, levofloxacin, lomefloxacin, nalidixic acid, norfloxacin, oxolinic acid, and pipemidic acid. The antimicrobial efficacy of the tris(quinolono)gallium(iii) complexes was studied against E. faecalis and S. aureus (both Gram-positive), as well as E. coli, K. pneumonia, and P. aeruginosa (all Gram-negative) in direct comparison to the tris(quinolono)iron(iii) complexes and the corresponding free quinolone ligands at various concentrations. For the tris(quinolono)gallium(iii) complexes, no combinational antimicrobial effects between Ga(3+) and the quinolone antimicrobial agents were observed. PMID:27315225

  20. Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

  1. Design and Performance Estimates of an Ablative Gallium Electromagnetic Thruster

    NASA Technical Reports Server (NTRS)

    Thomas, Robert E.

    2012-01-01

    The present study details the high-power condensable propellant research being conducted at NASA Glenn Research Center. The gallium electromagnetic thruster is an ablative coaxial accelerator designed to operate at arc discharge currents in the range of 10-25 kA. The thruster is driven by a four-parallel line pulse forming network capable of producing a 250 microsec pulse with a 60 kA amplitude. A torsional-type thrust stand is used to measure the impulse of a coaxial GEM thruster. Tests are conducted in a vacuum chamber 1.5 m in diameter and 4.5 m long with a background pressure of 2 microtorr. Electromagnetic scaling calculations predict a thruster efficiency of 50% at a specific impulse of 2800 seconds.

  2. Electron microscopy of gallium nitride growth on polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Webster, R. F.; Cherns, D.; Kuball, M.; Jiang, Q.; Allsopp, D.

    2015-11-01

    Transmission and scanning electron microscopy were used to examine the growth of gallium nitride (GaN) on polycrystalline diamond substrates grown by metalorganic vapour phase epitaxy with a low-temperature aluminium nitride (AlN) nucleation layer. Growth on unmasked substrates was in the (0001) orientation with threading dislocation densities ≈7 × 109 cm-2. An epitaxial layer overgrowth technique was used to reduce the dislocation densities further, by depositing silicon nitride stripes on the surface and etching the unmasked regions down to the diamond substrate. A re-growth was then performed on the exposed side walls of the original GaN growth, reducing the threading dislocation density in the overgrown regions by two orders of magnitude. The resulting microstructures and the mechanisms of dislocation reduction are discussed.

  3. Localized surface phonon polariton resonances in polar gallium nitride

    SciTech Connect

    Feng, Kaijun Islam, S. M.; Verma, Jai; Hoffman, Anthony J.; Streyer, William; Wasserman, Daniel; Jena, Debdeep

    2015-08-24

    We demonstrate the excitation of localized surface phonon polaritons in an array of sub-diffraction pucks fabricated in an epitaxial layer of gallium nitride (GaN) on a silicon carbide (SiC) substrate. The array is characterized via polarization- and angle-dependent reflection spectroscopy in the mid-infrared, and coupling to several localized modes is observed in the GaN Reststrahlen band (13.4–18.0 μm). The same structure is simulated using finite element methods and the charge density of the modes are studied; transverse dipole modes are identified for the transverse electric and magnetic polarizations and a quadrupole mode is identified for the transverse magnetic polarization. The measured mid-infrared spectrum agrees well with numerically simulated spectra. This work could enable optoelectronic structures and devices that support surface modes at mid- and far-infrared wavelengths.

  4. Localized surface phonon polariton resonances in polar gallium nitride

    NASA Astrophysics Data System (ADS)

    Feng, Kaijun; Streyer, William; Islam, S. M.; Verma, Jai; Jena, Debdeep; Wasserman, Daniel; Hoffman, Anthony J.

    2015-08-01

    We demonstrate the excitation of localized surface phonon polaritons in an array of sub-diffraction pucks fabricated in an epitaxial layer of gallium nitride (GaN) on a silicon carbide (SiC) substrate. The array is characterized via polarization- and angle-dependent reflection spectroscopy in the mid-infrared, and coupling to several localized modes is observed in the GaN Reststrahlen band (13.4-18.0 μm). The same structure is simulated using finite element methods and the charge density of the modes are studied; transverse dipole modes are identified for the transverse electric and magnetic polarizations and a quadrupole mode is identified for the transverse magnetic polarization. The measured mid-infrared spectrum agrees well with numerically simulated spectra. This work could enable optoelectronic structures and devices that support surface modes at mid- and far-infrared wavelengths.

  5. Single event upsets in gallium arsenide dynamic logic

    SciTech Connect

    Fouts, D.J. . ECE Dept.); Weatherford, T. ); McMorrow, C.; Melinger, J.S.; Campbell, A.B. )

    1994-12-01

    The advantages and disadvantages of using gallium arsenide (GaAs) dynamic logic in computers and digital systems are briefly discussed, especially with respect to space applications. A short introduction to the topology and operation of GaAs Two-Phase Dynamic FET Logic (TDFL) circuits is presented. Experiments for testing the SEU sensitivity of GaAs TDFL, using a laser to create charge collection events, are described. Results are used to estimate the heavy-ion, soft error rate for TDFL in a spacecraft in geosynchronous orbit, and the dependence of the SEU sensitivity on clock frequency, clock voltage, and clock phase. Analysis of the data includes a comparison between the SEU sensitivities of TDFL and the more common static form of GaAs logic, Directly Coupled FET Logic (DCFL). This is the first reported SEU testing of GaAs dynamic logic.

  6. Modeling and simulation of bulk gallium nitride power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Sabui, G.; Parbrook, P. J.; Arredondo-Arechavala, M.; Shen, Z. J.

    2016-05-01

    Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range.

  7. Band structures in silicene on monolayer gallium phosphide substrate

    NASA Astrophysics Data System (ADS)

    Ren, Miaojuan; Li, Mingming; Zhang, Changwen; Yuan, Min; Li, Ping; Li, Feng; Ji, Weixiao; Chen, Xinlian

    2016-07-01

    Opening a sizable band gap in the zero-gap silicene is a key issue for its application in nanoelectronics. We design new 2D silicene and GaP heterobilayer (Si/GaP HBL) composed of silicene and monolayer (ML) GaP. Based on first-principles calculations, we find that the interaction energies are in the range of -295.5 to -297.5 meV per unit cell, indicating a weak interaction between silicene and gallium phosphide (GaP) monolayer. The band gap changes ranging from 0.06 to 0.44 eV in hybrid HBLs. An unexpected indirect-direct band gap crossover is also observed in HBLs, dependent on the stacking pattern. These provide a possible way to design effective FETs out of silicene on GaP monolayer.

  8. Temperature dependence of carrier capture by defects in gallium arsenide

    SciTech Connect

    Wampler, William R.; Modine, Normand A.

    2015-08-01

    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  9. Low-threshold indium gallium nitride quantum dot microcavity lasers

    NASA Astrophysics Data System (ADS)

    Woolf, Alexander J.

    Gallium nitride (GaN) microcavities with embedded optical emitters have long been sought after as visible light sources as well as platforms for cavity quantum electrodynamics (cavity QED) experiments. Specifically, materials containing indium gallium nitride (InGaN) quantum dots (QDs) offer an outstanding platform to study light matter interactions and realize practical devices, such as on-chip light emitting diodes and nanolasers. Inherent advantages of nitride-based microcavities include low surface recombination velocities, enhanced room-temperature performance (due to their high exciton binding energy, as high as 67 meV for InGaN QDs), and emission wavelengths in the blue region of the visible spectrum. In spite of these advantages, several challenges must be overcome in order to capitalize on the potential of this material system. Such diffculties include the processing of GaN into high-quality devices due to the chemical inertness of the material, low material quality as a result of strain-induced defects, reduced carrier recombination effciencies due to internal fields, and a lack of characterization of the InGaN QDs themselves due to the diffculty of their growth and therefore lack of development relative to other semiconductor QDs. In this thesis we seek to understand and address such issues by investigating the interaction of light coupled to InGaN QDs via a GaN microcavity resonator. Such coupling led us to the demonstration of the first InGaN QD microcavity laser, whose performance offers insights into the properties and current limitations of the nitride materials and their emitters. This work is organized into three main sections. Part I outlines the key advantages and challenges regarding indium gallium nitride (InGaN) emitters embedded within gallium nitride (GaN) optical microcavities. Previous work is also discussed which establishes context for the work presented here. Part II includes the fundamentals related to laser operation, including the

  10. Fabrication and properties of gallium phosphide variable colour displays

    NASA Technical Reports Server (NTRS)

    Effer, D.; Macdonald, R. A.; Macgregor, G. M.; Webb, W. A.; Kennedy, D. I.

    1973-01-01

    The unique properties of single-junction gallium phosphide devices incorporating both red and green radiative recombination centers were investigated in application to the fabrication of monolithic 5 x 7 displays capable of displaying symbolic and alphanumeric information in a multicolor format. A number of potentially suitable material preparation techniques were evaluated in terms of both material properties and device performance. Optimum results were obtained for double liquid-phase-epitaxial process in which an open-tube dipping technique was used for n-layer growth and a sealed tipping procedure for subsequent p-layer growth. It was demonstrated that to prepare devices exhibiting a satisfactory range of dominant wavelengths which can be perceived as distinct emission colors extending from the red through green region of the visible spectrum involves a compromise between the material properties necessary for efficient red emission and those considered optimum for efficient green emission.

  11. A model for pore growth in anodically etched gallium phosphide

    NASA Astrophysics Data System (ADS)

    Ricci, P. C.; Salis, M.; Anedda, A.

    2005-06-01

    The electrochemical etching process of porous gallium phosphide was studied by means of the characteristic current-potential (I-V) curves. Measurements were performed in H2SO4 0.5-M aqueous solution both in the dark and by illuminating the samples with the 351-nm line of an argon laser. Raman spectroscopy was applied to investigate the surface morphology of the samples prepared under different anodizing conditions within the potentiostatic regime. Based on a few reasonable assumptions, a simple model of pore growth is proposed. The enhancing effect in current intensity due to the branching of pores and the opposite effect due to a concomitant decrease in the effective cross area available for carrier transport are accounted for to explain the main features of the recorded I -V curves.

  12. Compilation of gallium resource data for bauxite deposits

    USGS Publications Warehouse

    Schulte, Ruth F.; Foley, Nora K.

    2014-01-01

    Gallium (Ga) concentrations for bauxite deposits worldwide have been compiled from the literature to provide a basis for research regarding the occurrence and distribution of Ga worldwide, as well as between types of bauxite deposits. In addition, this report is an attempt to bring together reported Ga concentration data into one database to supplement ongoing U.S. Geological Survey studies of critical mineral resources. The compilation of Ga data consists of location, deposit size, bauxite type and host rock, development status, major oxide data, trace element (Ga) data and analytical method(s) used to derive the data, and tonnage values for deposits within bauxite provinces and districts worldwide. The range in Ga concentrations for bauxite deposits worldwide is

  13. Results from the Soviet-American gallium experiment

    SciTech Connect

    Abazov, A.I.; Anosov, O.L.; Faizov, E.L.; Gavrin, V.N.; Kalikhov, A.V.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mezentseva, S.A.; Mirmov, I.N.; Ostrinsky, A.V.; Pshukov, A.M.; Revzin, N.E.; Shikhin, A.A.; Timofeyev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Zatsepin, G.T. . Inst. Yadernykh Issledovanij); Bowles, T.J.; Cleveland, B.T.; Elliott, S.R.; O'Brien, H.A.; Wark, D.L.; Wilkerson, J.F.

    1991-01-01

    A radiochemical {sup 71}Ga-{sup 71}Ge experiment to determine the primary flux of neutrinos from the Sun has begun operation at the Baksan Neutrino Observatory. The number of {sup 71}Ge atoms extracted from thirty tons of gallium was measured in five runs during the period of January to July 1990. Assuming that the extraction efficiency for {sup 71}Ge atoms produced by solar neutrinos is the same as from natural Ge carrier, we observed the capture rate to be 20 + 15/{minus}20 (stat) {plus minus} 32 (syst) SNU, resulting in a limit of less than 79 SNU (90% CL). This is to be compared with 132 SNU predicted by the Standard Solar Model.

  14. Results from the Soviet-American gallium experiment

    SciTech Connect

    Abazov, A.I.; Anosov, O.L.; Faizov, E.L.; Gavrin, V.N.; Kalikhov, A.V.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mezentseva, S.A.; Mirmov, I.N.; Ostrinsky, A.V.; Pshukov, A.M.; Revzin, N.E.; Shikhin, A.A.; Timofeyev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Zatsepin, G.T.; Bowles, T.J.; Cleveland, B.T.; Elliott, S.R.; O`Brien, H.A.; Wark, D.L.; Wilkerson, J.F.; Davis, R. Jr.; Lande, K.; Cherry, M.L.; Kouzes, R.T.

    1991-12-31

    A radiochemical {sup 71}Ga-{sup 71}Ge experiment to determine the primary flux of neutrinos from the Sun has begun operation at the Baksan Neutrino Observatory. The number of {sup 71}Ge atoms extracted from thirty tons of gallium was measured in five runs during the period of January to July 1990. Assuming that the extraction efficiency for {sup 71}Ge atoms produced by solar neutrinos is the same as from natural Ge carrier, we observed the capture rate to be 20 + 15/{minus}20 (stat) {plus_minus} 32 (syst) SNU, resulting in a limit of less than 79 SNU (90% CL). This is to be compared with 132 SNU predicted by the Standard Solar Model.

  15. Recognition of distinctive patterns of gallium-67 distribution in sarcoidosis

    SciTech Connect

    Sulavik, S.B.; Spencer, R.P.; Weed, D.A.; Shapiro, H.R.; Shiue, S.T.; Castriotta, R.J. )

    1990-12-01

    Assessment of gallium-67 ({sup 67}Ga) uptake in the salivary and lacrimal glands and intrathoracic lymph nodes was made in 605 consecutive patients including 65 with sarcoidosis. A distinctive intrathoracic lymph node {sup 67}Ga uptake pattern, resembling the Greek letter lambda, was observed only in sarcoidosis (72%). Symmetrical lacrimal gland and parotid gland {sup 67}Ga uptake (panda appearance) was noted in 79% of sarcoidosis patients. A simultaneous lambda and panda pattern (62%) or a panda appearance with radiographic bilateral, symmetrical, hilar lymphadenopathy (6%) was present only in sarcoidosis patients. The presence of either of these patterns was particularly prevalent in roentgen Stages I (80%) or II (74%). We conclude that simultaneous (a) lambda and panda images, or (b) a panda image with bilateral symmetrical hilar lymphadenopathy on chest X-ray represent distinctive patterns which are highly specific for sarcoidosis, and may obviate the need for invasive diagnostic procedures.

  16. Coated gallium arsenide neutron detectors : results of characterizationmeasurements.

    SciTech Connect

    Klann, R. T.; Perret, G.; Sanders, J.

    2006-09-29

    Effective detection of special nuclear materials (SNM) is essential for reducing the threat associated with stolen or improvised nuclear devices. Passive radiation detection technologies are primarily based on gamma-ray detection and subsequent isotope identification or neutron detection (specific to neutron sources and SNM). One major effort supported by the Department of Homeland Security in the area of advanced passive detection is handheld or portable neutron detectors for search and localization tasks in emergency response and interdiction settings. A successful SNM search detector will not only be able to confirm the presence of fissionable materials but also establish the location of the source in as short of time as possible while trying to minimize false alarms due to varying background or naturally occurring radioactive materials (NORM). For instruments based on neutron detectors, this translates to detecting neutrons from spontaneous fission or alpha-n reactions and being able to determine the direction of the source (or localizing the source through subsequent measurements). Polyethylene-coated gallium arsenide detectors were studied because the detection scheme is based on measuring the signal in the gallium arsenide wafers from the electrical charge of the recoil protons produced from the scattering of neutrons from the hydrogen nucleus. The inherent reaction has a directional dependence because the neutron and hydrogen nucleus have equivalent masses. The assessment and measurement of polyethylene-coated gallium arsenide detector properties and characteristics was the first phase of a project being performed for the Department of Homeland Security and the results of these tests are reported in this report. The ultimate goal of the project was to develop a man-portable neutron detection system that has the ability to determine the direction of the source from the detector. The efficiency of GaAs detectors for different sizes of polyethylene layers and

  17. Overlapping-Gate Ccd Imagers On Gallium Arsenide

    NASA Astrophysics Data System (ADS)

    Kosel, P. B.; Katzer, D. S.; Poore, R. E...

    1987-01-01

    Charge-coupled device (CCD) imagers have been fabricated on gallium arsenide (GaAs) with very closely spaced (<100nm) Schottky-barrier metal electrodes. The short interelectrode spacing was achieved by using anodic oxidation in an ethylene glycol based electrolyte. All the active device regions of the CCD imagers were formed by silicon implantation into semi-insulating GaAs substrates followed by rapid thermal activation. The photodetectors were Schottky barrier diodes formed with thin aluminum metal anodes over silicon-implanted active regions in the semi-insulating substrate. The detectors formed a linear array along one side of the CCD channel and a three-phase transfer electrode structure was used. The imagers have been tested with front side illumination at clocking speeds up to 25 MHz.

  18. Kinetically controlled growth of gallium on stepped Si (553) surface

    NASA Astrophysics Data System (ADS)

    Kumar, Mukesh; Pasha, Syed Khalid; Govind

    2013-10-01

    Kinetically controlled growth of gallium (Ga) metal has been reported on high index stepped Si (553) surface and its thermal stability with various novel superstructural phases has been analyzed. Auger electron spectroscopy studies revealed that the adsorption of Ga at room temperature (RT) follows Frank-van der Merwe (FM) growth mode while for higher substrate temperature, Ga adsorption remains within the submonolayer range. Thermal desorption and low energy electron diffraction studies investigated the formation of thermally stable Ga-islands and the various Ga induced superstructural phase on Si (553). During room temperature adsorption, (1 1 1)7 × 7 facet of Si (553) reconstructed into (1 1 1)6 × 6 facet while during desorption process, stable (1 1 1)6 × 6 and (1 1 1)√3 × √3-R30° surface reconstructions has been observed.

  19. Tumoral calcinosis associated with sarcoidosis and positive bone and gallium imaging

    SciTech Connect

    Wolpe, F.M.; Khedkar, N.Y.; Gordon, D.; Werner, P.; Shirazi, P.; Al-Sabban, M.H.

    1987-07-01

    A 63-year-old female with biopsy proven tumoral calcinosis presented with progressive and recurrent swelling and tenderness of the right hip, thigh, elbow, and wrist. Both gallium and bone imaging demonstrated intense, congruent uptake in these areas. This is the third case of tumoral calcinosis with sarcoidosis documented in the literature. However, these are the first published bone and gallium scans in a patient with a history of sarcoidosis and tumoral calcinosis.

  20. Early supradiaphragmatic Hodgkin's disease. High-dose gallium scanning obviates the need for staging laparotomy

    SciTech Connect

    Blackwell, E.A.; Joshua, D.E.; McLaughlin, A.F.; Green, D.; Kronenberg, H.; May, J.

    1986-08-15

    Experience with 16 sequential patients with Stage IA/IIA supradiaphragmatic Hodgkin's disease who had no evidence of intra-abdominal disease using high-dose gallium and computerized tomography scanning is reported. Subsequent staging laparotomy also was negative in all these patients and did not alter management decisions. It is suggested that high-dose, whole-body gallium scanning and other noninvasive staging procedures give reliable data for therapeutic decisions.

  1. First Results of the Testing of the Liquid Gallium Jet Limiter Concept for ISTTOK

    SciTech Connect

    Gomes, R. B.; Fernandes, H.; Silva, C.; Borba, D.; Carvalho, B.; Varandas, C.

    2006-12-04

    The use of liquid metals as plasma facing components in tokamaks has recently experienced a renewed interest stimulated by their advantages to the development of a fusion reactor. Liquid metals have been proposed to solve problems related to the erosion and neutronic activation of solid walls submitted to high power loads allowing an efficient heat exhaustion from fusion devices. Presently the most promising materials are Lithium and Gallium. ISTTOK, a small size tokamak, will be used to test the behavior of a liquid Gallium jet in the vacuum chamber and its influence on the plasma. This paper presents a description of the conceived setup as well as experimental results. The liquid Gallium jet is generated by hydrostatic pressure and injected in a radial position close to a moveable stainless steel limiter. Both the jet and the limiter positions are variable allowing for a controlled exposure of the liquid Gallium to the edge plasma. The main components of the Gallium loop are a MHD pump, the liquid metal injector and a filtering system. The MHD pump is of the induction type, based on rotating permanent magnets. The injector is build from a stainless steel pipe ended by a shaping nozzle. A setup has been developed to introduce oxide-free Gallium inside the loop's main supply tank. Raw liquid metal is placed inside a chamber heated and degassed under high vacuum while clean Gallium is extracted from the main body of the liquefied metal. Prior to installation on the tokamak, the experimental rig has been implemented using a Pyrex tube as test chamber to investigate the stability of the Gallium jet and its break-up length for several nozzle sizes. Results are presented in this paper. This rig was also useful to assess the behavior of the overall implemented apparatus.

  2. Bit-systolic arithmetic arrays using dynamic differential gallium arsenide circuits

    NASA Technical Reports Server (NTRS)

    Beagles, Grant; Winters, Kel; Eldin, A. G.

    1992-01-01

    A new family of gallium arsenide circuits for fine grained bit-systolic arithmetic arrays is introduced. This scheme combines features of two recent techniques of dynamic gallium arsenide FET logic and differential dynamic single-clock CMOS logic. The resulting circuits are fast and compact, with tightly constrained series FET propagation paths, low fanout, no dc power dissipation, and depletion FET implementation without level shifting diodes.

  3. Gallium compounds in solar cells. (Latest citations from the Aerospace database). Published Search

    SciTech Connect

    Not Available

    1993-12-01

    The bibliography contains citations concerning the use of gallium compounds in solar cells to increase solar cell efficiency. Computer models, theories, and performance tests are included. Gallium compounds used in thin film cells, cascade solar cells, large area solar cells, cells designed for industrial and space applications, and as antireflection coatings are discussed. Resistance to radiation damage, cooling to improve efficiency, grain boundary behavior, and economic considerations are also covered. (Contains 250 citations and includes a subject term index and title list.)

  4. Sequential technetium-99m/gallium-67 scintigraphic evaluation of subclinical osteomyelitis complicating fracture nonunion

    SciTech Connect

    Esterhai, J.; Alavi, A.; Mandell, G.A.; Brown, J.

    1985-01-01

    Twenty-four patients with a history of post-traumatic fracture nonunion underwent sequential /sup 99m/Tc and /sup 67/Ga citrate scintigraphy in an attempt to differentiate between posttraumatic fracture nonunion and nonunion complicated by subclinical osteomyelitis. Neither technetium nor gallium studies alone nor in combination, with or without clinical correlation, could help delineate between fracture nonunion and nonunion complicated by subclinical osteomyelitis because of the increased technetium and gallium radioisotope uptake associated with the nonunion site.

  5. Gallium-68: a systematic review of its nononcological applications.

    PubMed

    Vorster, Mariza; Maes, Alex; Van deWiele, Christophe; Sathekge, Mike

    2013-09-01

    The increased availability of PET facilities worldwide has sparked renewed interest in the use of generator-produced tracers such as gallium-68 (Ga). Imaging with Ga provides exciting opportunities in terms of new ligand-labelling possibilities and the exploration of novel clinical applications. The aim of the study was to summarize and appraise what has been published on the clinical applications of Ga outside oncology practice. This systematic review was based on the PRISMA guidelines. Databases searched include PubMed, Medline, Scopus, Web of Science and Google Scholar. The following search strategy was used: 'Ga' OR 'Gallium' (all fields) NOT the following (title and abstract): Oncology/NET/neuroendocrine tumour/tumor/DOTATOC, DOTATATE, DOTANOC. These results were further limited to English publications, which resulted in 205 publications on PubMed. After duplicates and irrelevant articles were removed, 72 publications remained for inclusion. Only those studies in which compounds were labelled with Ga for applications other than in oncology-related indications were included. Publications in which the focus was on oncology-related applications of Ga imaging or in which the emphasis was on aspects relating to generators, radiochemistry or physics were excluded. Although a multitude of tracers have been labelled with Ga over several decades, it has not been established in routine clinical practice yet. In addition, neuroendocrine and other oncological applications have dominated the field until relatively recently following reports of applications in infection and inflammation. The majority of publications to date involve small numbers of subjects in mainly preclinical settings. Differences in methodology preclude grouping of studies to reach a clear conclusion. There is wide scope for Ga tracer application outside oncological practice, which remains greatly underutilized. Larger clinical trials are needed to validate these applications. PMID:23812409

  6. Solar neutrino measurement with radiochemical gallium detector (GALLEX)

    NASA Astrophysics Data System (ADS)

    von Ammon, Reinhard

    1994-04-01

    The GALLEX experiment for the detection of solar neutrinos by means of a radiochemical gallium detector is operated by groups from Italy, France, Germany, Israel and the USA in the Gran Sasso underground laboratory (LNGS) near L'Aquila (Italy). It consists of (1) the technical scale tank made of glass fiber reinforced polyester fabric containing 101 metric tons (54 cu m) of a highly concentrated (8 moles per liter) GaCl3 solution; (2) a gas sparging system for desorption of GeCl4 which has been formed by interaction of the neutrinos with gallium according to Ga-71 + nue yields Ge-71 + e(-) and by addition of ca. 1 mg of a stable Ge isotope; (3) the absorption columns for concentration of GeCl4 into a volume of 1 l of water; (4) the laboratory scale apparatus for conversion of GeCl4 to GeH4 and mixing with the counting gas Xe; (5) the counter filling station, and (6) the low level proportional counters. Contributions of possible side reactions which have to be corrected for, e.g. by cosmic muons, fast neutrons and alpha-emitters are discussed, as well as the purification of the target solution from long-lived ( t1/2 = 271 d) cosmogenic Ge-68. A first preliminary result after one year of solar neutrino measurement is presented. This constitutes the first direct measurement of the basic proton-proton fusion reaction in the core of the sun. This result, appreciably below the predictions of the standard solar model (SSM) (132 Solar Neutrino Units (SNU)) can be interpreted, together with the results of the chlori ne and KAMIOKANDE experiments either by astrophysics or by neutrino oscillations (Mikheyev-Smirnov-Wolfenstein (MSW) effect). The solar neutrino measurements are continuing and a calibration experiment with a Cr-51 source is in preparation.

  7. The use of gallium-67 scintigraphy in the diagnosis of acute interstitial nephritis

    PubMed Central

    Graham, François; Lord, Martin; Froment, Daniel; Cardinal, Héloise; Bollée, Guillaume

    2016-01-01

    Background Gallium-67 scintigraphy has been suggested as a noninvasive method to diagnose acute interstitial nephritis (AIN). However, its diagnostic performance and usefulness remain controversial. Methods We retrospectively reviewed the charts of 76 patients who underwent gallium-67 scintigraphy for a suspicion of AIN. Patients were classified based on kidney biopsy and/or clinical probability of AIN. Gallium-67 scintigraphy results were reinterpreted blindly using both posterior planar and single photon emission computed tomography (SPECT) imaging. Intensity of radioisotope uptake in the kidney was graded from 0 to 5. Results The diagnosis of AIN was confirmed in 23 patients and excluded in 44. Nine patients with an uncertain diagnosis were excluded from subsequent analysis. A gallium-67 kidney uptake cutoff of 1 gave a negative predictive value of 100%, whereas a cutoff of 5 had an excellent specificity and positive predictive value for the diagnosis of AIN. When using a cutoff of 3, which had previously been used in the literature, we obtained a sensitivity of 61% and a specificity of 75% with posterior planar imaging. The results of both SPECT and posterior planar imaging modalities were comparable. Conclusions Gallium-67 scintigraphy may be of interest in patients with a clinical suspicion of AIN, especially in those who are unable to undergo kidney biopsy. However, results need to be interpreted with caution and depend on the intensity of gallium-67 kidney uptake. PMID:26798465

  8. Study of liquid gallium at high pressure using synchrotron x-ray

    SciTech Connect

    Yu, Tony; Guo Quanzhong; Parise, John; Chen Jiuhua; Ehm, Lars; Huang Shu; Luo Shengnian

    2012-06-01

    Liquid gallium has been studied at high pressure up to 2 GPa and ambient temperature in a diamond anvil cell using high energy synchrotron x-ray beam. The total x-ray scattering data of liquid gallium were collected up to Q = 12 A{sup -1} and analyzed using pair distribution functions (PDF). The results indicate that the first nearest neighbor peak and second nearest neighbor (shoulder) peak of PDF in liquid gallium does not change with pressure, whereas the higher order (i.e., third and fourth) nearest neighbor peaks shift towards shorter distance with increasing pressure. Reverse Monte Carlo modeling based on the observed data shows that the coordination number in the liquid gallium increases with pressure from 10.5 at 0.3 GPa to 11.6 at 2 GPa. An atomic arrangement similar to the crystalline phase of Ga(II) with coordination number of 12 is proposed for the locally dense-packed rigid unit in liquid gallium. The volume compression data derived from the structure modeling yield a bulk modulus of 12.1(6) GPa for liquid gallium.

  9. High-Temperature Decomposition of Brønsted Acid Sites in Gallium-Substituted Zeolites

    SciTech Connect

    K Al-majnouni; N Hould; W Lonergan; D Vlachos; R Lobo

    2011-12-31

    The dehydroxylation of Broensted acid sites (BAS) in Ga-substituted zeolites was investigated at temperatures up to 850 C using X-ray absorption spectroscopy (XAS), Fourier transform infrared spectroscopy (FTIR), and mass spectrometry-temperature programmed desorption (MS-TPD). X-ray absorption near-edge spectroscopy (XANES) revealed that the majority of gallium has tetrahedral coordination even after complete dehydroxylation. The interatomic gallium-oxygen distance and gallium coordination number determined by extended X-ray absorption fine structure (EXAFS) are consistent with gallium in tetrahedral coordination at low T (< 550 C). Upon heating Ga-Beta and Ga-ZSM5 to 850 C, analysis of the EXAFS showed that 70 and 80% of the gallium was still in tetrahedral coordination. The remainder of the gallium was found to be in octahedral coordination. No trigonal Ga atoms were observed. FTIR measurements carried out at similar temperatures show that the intensity of the OH vibration due to BAS has been eliminated. MS-TPD revealed that hydrogen in addition to water evolved from the samples during dehydroxylation. This shows that dehydrogenation in addition to dehydration is a mechanism that contributes to BAS decomposition. Dehydrogenation was further confirmed by exposing the sample to hydrogen to regenerate some of the BAS as monitored by FTIR and MS-TPD.

  10. Early recognition of recurrent hepatocellular carcinoma utilizing gallium-67 citrate scintigraphy

    SciTech Connect

    Serafini, A.N.; Jeffers, L.J.; Reddy, K.R.; Heiba, S.; Schiff, E.R.

    1988-05-01

    Gallium-67 scintigraphy is a valuable test together with other screening tests such as alpha feto-protein (AFP) and other imaging modalities in following up recurrent hepatocellular carcinoma (HCC). Three patients were followed in our institution for intervals varying from 2-24 mo after successful resection of uninodular localized hepatomas. In the first patient, gallium scan showed abnormal localized activity while the computed tomography (CT) scan and the magnetic resonance imaging were negative. Liver function tests and AFP were also normal and the patient was operated upon only on the basis of the gallium scan. The second patient had a follow-up gallium scan 2 mo after the first operation that showed an area of increased activity along the inferior aspect of the right lobe. A CT scan done after that showed no evidence of recurrence, but subsequently became positive when repeated 4 mo later. The third patient had abnormal simultaneous gallium scan and CT scan demonstrating a recurrence in the left adrenal gland while both AFP and carcinoembryonic antigen were normal. This has led us to consider every patient a candidate for a baseline and follow-up gallium scan for evaluation for recurrence following HCC.

  11. A study of surface tension driven segregation in monotectic alloy systems

    NASA Technical Reports Server (NTRS)

    Andrews, J. Barry; Andrews, Rosalia N.; Gowens, Terrell F.

    1988-01-01

    The compatibilities of various monotectic alloy systems with several different crucible materials were evaluated. The study was carried out using small candidate alloy samples of compositions that produced fifty volume percent of each liquid phase at the monotectic temperature. Compatibility was based on the evaluation of the wetting tendency of the two immiscible phases with the crucible material in a one-g solidified sample. Three types of wetting phenomena were observed during the evaluation. Type 1 indicates an alloy-crucible combination where the L2 phase preferentially wets the crucible material. Since L2 is usually the minority phase in desirable alloys, this material combination would be difficult to process and is therefore considered incompatible. Type 2 behavior indicates an alloy-crucible combination where the L1 phase preferentially wets the crucible material. This type of combination is considered compatible since surface tension effects should aid in processing the alloy to a useful form. Type 3 indicates any combination that leads to major reactions between the alloy and crucible material, gas entrapment, or separation of the metal from the crucible wall. Additional compatibility evaluations would have to be carried out on combinations of this category. The five alloy systems studied included aluminum-bismuth, copper-lead, aluminum-indium, aluminum-lead and cadmium-gallium. The systems were combined with crucibles of alumina, boron nitride, mullite, quartz, silicon carbide and zirconia.

  12. Growth and analysis of gallium arsenide-gallium antimonide single and two-phase nanoparticles

    NASA Astrophysics Data System (ADS)

    Schamp, Crispin T.

    When evaluating the path of phase transformations in systems with nanoscopic dimensions one often relies on bulk phase diagrams for guidance because of the lack of phase diagrams that show the effect of particle size. The GaAs-GaSb pseudo-binary alloy is chosen for study to gain insight into the size dependence of solid-solubility in a two-phase system. To this end, a study is performed using independent laser ablation of high purity targets of GaAs and GaSb. The resultant samples are analyzed by transmission electron microscopy. Experimental results indicate that GaAs-GaSb nanoparticles have been formed with compositions that lie within the miscibility gap of bulk GaAs-GaSb. An unusual nanoparticle morpohology resembling the appearance of ice cream cones has been observed in single component experiments. These particles are composed of a spherical cap of Ga in contact with a crystalline cone of either GaAs or GaSb. The cones take the projected 2-D shape of a triangle or a faceted gem. The liquid Ga is found to consistently be of spherical shape and wets to the widest corners of the cone, suggesting an energy minimum exists at that wetting condition. To explore this observation a liquid sphere is modeled as being penetrated by a solid gem. The surface energies of the solid and liquid, and interfacial energy are summed as a function of penetration depth, with the sum showing a cusped minimum at the penetration depth corresponding to the waist of the gem. The angle of contact of the liquid wetting the cone is also calculated, and Young's contact angle is found to occur when the derivative of the total energy with respect to penetration depth is zero, which can be a maximum or a minimum depending on the geometrical details. The spill-over of the meniscus across the gem corners is found to be energetically favorable when the contact angle achieves the value of the equilibrium angle; otherwise the meniscus is pinned at the corners.

  13. Origin of optical bistability and hysteretic reflectivity on account of nonlinearity at optically induced gallium silica interface

    NASA Astrophysics Data System (ADS)

    Sharma, Arvind; Nagar, A. K.

    2016-05-01

    The origin of optical bistability and hysterectic reflectivity on account of nonlinearity at optically induced Gallium silica interface has been investigated. Assuming the wave to be incident from the gallium nano particle layer side at gallium silica interface. The coupling between incident and reflected waves has shown nonlinear effects on Snell's law and Fresnel law. Effect of these nonlinear processes optical bistability and hysterectic reflectivity theoretically has been investigated. Theoretical results obtained are consistent with the available experimental results.

  14. Concerning the energy levels of silver in Ge-Si alloys

    SciTech Connect

    Tahirov, V. I.; Agamaliev, Z. A.; Sadixova, S. R.; Guliev, A. F.; Gahramanov, N. F.

    2012-03-15

    The emission from impurity states of silver (an element of the IB subgroup) in a Ge-Si alloy, containing 18 at % Si, has been studied. The donor level of silver has been found in crystals doubly doped with gallium and silver, while its first acceptor level has been revealed in crystals doped with only silver. Single crystals were grown by pulling from a melt using a feeding rod. Doping with gallium was performed by introducing this element into the feeding rod, and silver was introduced into the crystals via diffusion. The positions of the donor and first acceptor Ag levels with respect to the top of the valence band were found by analyzing the temperature dependence of the Hall coefficient and the electroneutrality equation for the crystal: 0.06 and 0.29 eV, respectively.

  15. [Is it useful to perform a (67)gallium scintigraphy in the follow-up of patients with gastric lymphoma?].

    PubMed

    Ruiz Hernández, G; Pallardó-Calatayud, J; Ferrer Albiach, C; Balaguer-Martínez, J V; Romero-de-Avila, C; Castillo-Pallarés, F J

    2001-02-01

    Gastric (67)gallium uptake in patients with peptic ulcer has been described in many publications literature. We present the case of a jejunal (67)gallium uptake in a patient with a background of total gastrectomy due to a diffuse large B cell gastric lymphoma, associated to benign peptic ulcer which had been identified by endoscopy. We have not found any similar cases in regards to (67)gallium reported in the literature. This study aims to present a review of the causes of gastrointestinal uptake of (67)gallium and of the utility of the radiotracer in patients with gastric lymphoma. PMID:11181327

  16. Understanding the Impact of Point Defects on the Optoelectronic Properties of Gallium Nitride from First-Principles

    NASA Astrophysics Data System (ADS)

    Lewis, Kirk; Matsubara, Masahiko; Bellotti, Enrico; Sharifzadeh, Sahar

    Gallium nitride (GaN) and related alloys form a class of wide bandgap semiconductors that have broad applications as components in optoelectronic devices; in particular, power electronics and blue and ultraviolet optical devices. Nitride films grow with high defect densities, and understanding the relationship between structural defects and optoelectronic function will be central to the design of new high-performance materials. Here, we take a first-principles density functional theory (DFT) and many-body perturbation theory (MBPT) approach to quantify the influence of defects on the electronic and optical properties of GaN. We predict, as expected, that introduction of a N or Ga vacancy results in several energetically favorable charged states within bulk GaN; these energetically favorable defects result in a significant modification of the quasiparticle and excitonic properties of GaN. We will discuss the implications of defect-induced-states for the electron transport and absorption properties of GaN. This work was partially supported by the Army Research Office (ARO) within the Collaborative Research Alliance (CRA-MSME).

  17. Saddle-like deformation in a dielectric elastomer actuator embedded with liquid-phase gallium-indium electrodes

    SciTech Connect

    Wissman, J.; Finkenauer, L.; Deseri, L.; Majidi, C.

    2014-10-14

    We introduce a dielectric elastomer actuator (DEA) composed of liquid-phase Gallium-Indium (GaIn) alloy electrodes embedded between layers of poly(dimethylsiloxane) (PDMS) and examine its mechanics using a specialized elastic shell theory. Residual stresses in the dielectric and sealing layers of PDMS cause the DEA to deform into a saddle-like geometry (Gaussian curvature K<0). Applying voltage Φ to the liquid metal electrodes induces electrostatic pressure (Maxwell stress) on the dielectric and relieves some of the residual stress. This reduces the longitudinal bending curvature and corresponding angle of deflection ϑ. Treating the elastomer as an incompressible, isotropic, NeoHookean solid, we develop a theory based on the principle of minimum potential energy to predict the principal curvatures as a function of Φ. Based on this theory, we predict a dependency of ϑ on Φ that is in strong agreement with experimental measurements performed on a GaIn-PDMS composite. By accurately modeling electromechanical coupling in a soft-matter DEA, this theory can inform improvements in design and fabrication.

  18. Composition of the core from gallium metal-silicate partitioning experiments

    NASA Astrophysics Data System (ADS)

    Blanchard, I.; Badro, J.; Siebert, J.; Ryerson, F. J.

    2015-10-01

    Gallium concentration (normalized to CI chondrites) in the mantle is at the same level as that of lithophile elements with similar volatility, implying that there must be little to no gallium in Earth's core. Metal-silicate partitioning experiments, however, have shown that gallium is a moderately siderophile element and should be therefore depleted in the mantle by core formation. Moreover, gallium concentrations in the mantle (4 ppm) are too high to be only brought by the late veneer; and neither pressure, nor temperature, nor silicate composition has a large enough effect on gallium partitioning to make it lithophile. We therefore systematically investigated the effect of core composition (light element content) on the partitioning of gallium by carrying out metal-silicate partitioning experiments in a piston-cylinder press at 2 GPa between 1673 K and 2073 K. Four light elements (Si, O, S, C) were considered, and their effect was found to be sufficiently strong to make gallium lithophile. The partitioning of gallium was then modeled and parameterized as a function of pressure, temperature, redox and core composition. A continuous core formation model was used to track the evolution of gallium partitioning during core formation, for various magma ocean depths, geotherms, core light element contents, and magma ocean composition (redox) during accretion. The only model for which the final gallium concentration in the silicate Earth matched the observed value is the one involving a light-element rich core equilibrating in a FeO-rich deep magma ocean (>1300 km) with a final pressure of at least 50 GPa. More specifically, the incorporation of S and C in the core provided successful models only for concentrations that lie far beyond their allowable cosmochemical or geophysical limits, whereas realistic O and Si amounts (less than 5 wt.%) in the core provided successful models for magma oceans deeper that 1300 km. These results offer a strong argument for an O- and Si

  19. Pulmonary gallium uptake in rats with granulomatosis induced by complete Freund adjuvant

    SciTech Connect

    Stanislas-Leguern, G.; Masse, R.; Jaubert, F.; Chretien, J.; Huchon, G.

    1988-01-01

    To investigate the mechanism of gallium-67 uptake in lung granulomatosis, we studied 13 rats in which lung granulomatosis was induced by injection of complete Freund adjuvant (CFA) and 14 controls. Gallium uptake was assessed in bronchoalveolar lavage fluid and lavaged lung. The cells responsible for gallium uptake were identified by latent image activation autoradiography. Gallium activity in both lavaged lungs and bronchoalveolar cells (BAC) was higher in CFA-treated animals than in controls (172,205 +/- 134,783 DPM versus 44,456 +/- 14,486 DPM +/- SD (p less than 0.05) and 40,083 +/- 16,350 DPM versus 9100 +/- 4114 DPM (p less than 0.05), respectively). In control rats, about two-thirds of total lung gallium was located in the interstitium, whereas in CFA-treated rats it was found in the mononuclear cells of lung granulomas. Gallium tracks were more numerous in the alveolar macrophages (AM) of CFA-treated rats than in control AM (28.4 +/- 10.0/field versus 8.4 +/- 3.8/field, p less than 0.001) but the number of tracks was proportional to the number of AM (52.4 +/- 18.7 versus 12.2 +/- 4.3, respectively; p less than 0.001). It is concluded that in rats with CFA-induced lung granulomatosis 1) pulmonary gallium uptake increases, 2) mononuclear cells are responsible for this uptake in both granulomas and AM, and 3) the increased uptake is due to the increased number of mononuclear cells.

  20. Gallium-containing phospho-silicate glasses: synthesis and in vitro bioactivity.

    PubMed

    Franchini, Mirco; Lusvardi, Gigliola; Malavasi, Gianluca; Menabue, Ledi

    2012-08-01

    A series of Ga-containing phospho-silicate glasses based on Bioglass 45S5, having molar formula 46.2SiO2·24.3Na2O·26.9CaO·2.6P2O5·xGa2O3 (x=1.0, 1.6, 3.5), were prepared by fusion method. The reference Bioglass 45S5 without gallium was also prepared. The synthesized glasses were immersed in simulated body fluid (SBF) for 30 days in order to observe ion release and hydroxyapatite (HA) formation. All Ga-containing glasses maintain the ability of HA formation as indicated by main X-ray diffractometric peaks and/or electronic scanning microscopy results. HA layer was formed after 1 day of SBF soaking in 45S5 glass containing up to 1.6% Ga2O3 content. Moreover, gallium released by the glasses was found to be partially precipitated on the glass surface as gallium phosphate. Further increase in gallium content reduced the ion release in SBF. The maximum of Ga(3+) concentration measured in solution is ~6 ppm determined for 3.5% Ga2O3 content. This amount is about half of the toxic level (14 ppm) of gallium and the glasses release gallium till 30 days of immersion in SBF. Considering the above results, the studied materials can be proposed as bioactive glasses with additional antimicrobial effect of gallium having no toxic outcome. PMID:24364938

  1. Investigating the effect of gallium curcumin and gallium diacetylcurcumin complexes on the structure, function and oxidative stability of the peroxidase enzyme and their anticancer and antibacterial activities.

    PubMed

    Jahangoshaei, Parisa; Hassani, Leila; Mohammadi, Fakhrossadat; Hamidi, Akram; Mohammadi, Khosro

    2015-10-01

    Curcumin has a wide spectrum of biological and pharmacological activities including anti-inflammatory, antioxidant, antiproliferative, antimicrobial and anticancer activities. Complexation of curcumin with metals has gained attention in recent years for improvement of its stability. In this study, the effect of gallium curcumin and gallium diacetylcurcumin on the structure, function and oxidative stability of horseradish peroxidase (HRP) enzyme were evaluated by spectroscopic techniques. In addition to the enzymatic investigation, the cytotoxic effect of the complexes was assessed on bladder, MCF-7 breast cancer and LNCaP prostate carcinoma cell lines by MTT assay. Furthermore, antibacterial activity of the complexes against S. aureus and E. coli was explored by dilution test method. The results showed that the complexes improve activity of HRP and also increase its tolerance against the oxidative condition. After addition of the complexes, affinity of HRP for hydrogen peroxide substrate decreases, while the affinity increases for phenol substrate. Circular dichroism, intrinsic and synchronous fluorescence spectra showed that the enzyme structure around the catalytic heme group becomes less compact and also the distance between the heme group and tryptophan residues increases due to binding of the complexes to HRP. On the whole, it can be concluded that the change in the enzyme structure upon binding to the gallium curcumin and gallium diacetylcurcumin complexes results in an increase in the antioxidant efficiency and activity of the peroxidise enzyme. The result of anticancer and antibacterial activities suggested that the complexes exhibit the potential for cancer treatment, but they have no significant antibacterial activity. PMID:26369539

  2. Micro and nano-structured green gallium indium nitride/gallium nitride light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Stark, Christoph J. M.

    towards smaller values was observed when the stripe width was reduced from 1 μm to 50 nm. At the same time a strong fourfold enhancement of the light emission from the patterned region over the unpatterned area was observed. Micro-patterned LEDs showed non-linear scaling of the light output power, and an enhancement of 39 % was achieved for structures with an area fill ratio of 0.5 over an LED with square mesa. Growth of cubic GaN and cubic GaInN/GaN LEDs was shown by M-OVPE in Vshaped grooves formed by the {111} planes of etched silicon. SEM images of the GaN layer in small ( 0.5 μm) regions show a contrast change where the phase boundary between cubic and wurtzite GaN is expected to occur. The growth parameter space is explored for optimal conditions while minimizing the alloying problem for GaN growth on Si. The cubic GaN phase is confirmed by electron back-scatter diffraction (EBSD) in the V-groove center, whereas wurtzite GaN is found near the groove edges. Luminescence of undoped GaN and GaInN/GaN multi-quantum well structures was studied by cathodoluminescence (CL). The undoped cubic GaN structure showed strong band-edge luminescence at 385 nm (3.22 eV) at 78 K, whereas for the MQW device strong emission at 498 nm is observed, even at room temperature. Full cubic LED structures were grown, and wavelength-stable electroluminescence at 489 nm was demonstrated. LEDs with integrated light extraction structures are grown on free-standing GaN substrates with different off-cut angles. The devices with different off-cut show pronounced features at the top surface that also penetrate the active region. For a 2.24° off-cut, these features resemble fish scales, where the feature sizes are in the μm-range. The 2.24° off-cut LED shows a 3.6-fold increased light output power compared to a LED on virtually on-axis substrate with 0.06° off-cut. The enhancement found in the fish scale LEDs is attributed to increased light scattering, effectively reducing the fraction of

  3. Alloy softening in binary molybdenum alloys

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Witzke, W. R.

    1972-01-01

    An investigation was conducted to determine the effects of alloy additions of Hf, Ta, W, Re, Os, Ir, and Pt on the hardness of Mo. Special emphasis was placed on alloy softening in these binary Mo alloys. Results showed that alloy softening was produced by those elements having an excess of s+d electrons compared to Mo, while those elements having an equal number or fewer s+d electrons than Mo failed to produce alloy softening. Alloy softening and hardening can be correlated with the difference in number of s+d electrons of the solute element and Mo.

  4. Thermoelastic martensitic transformations in ternary Ni50Mn50- z Ga z alloys

    NASA Astrophysics Data System (ADS)

    Belosludtseva, E. S.; Kuranova, N. N.; Marchenkova, E. B.; Popov, A. G.; Pushin, V. G.

    2016-01-01

    We have studied the effect of gallium alloying on the structure, phase composition, and physical properties of ternary alloys of the Ni50Mn50- z Ga z (0 ≤ z ≤ 25 at %) quasi-binary section in a broad temperature range. Dependences of the type of crystalline structure of the high-temperature austenite phase and martensite, as well as the critical temperatures of martensitic transformations on the alloy composition, are determined. A phase diagram of the structural and magnetic transformations is constructed. Concentration boundaries of the existence of tetragonal L10 (2 M) martensite and martensitic phases (10 M and 14 M) with complex multilayer crystalline lattices are found. It is established that the predominant martensite morphology is determined by the hierarchy of packets of thin coherent nano- and submicrocrystalline plates with habit planes close to {011} B2, pairwise twinned along one of 24 equivalent {011}<011> B2 twinning shear systems.

  5. Cleansing the colon in gallium-67 scintigraphy: a prospective comparison of regimens

    SciTech Connect

    Novetsky, G.J.; Turner, D.A.; Ali, A.; Raynor, W.J.; Fordham, E.W.

    1981-11-01

    Colonic accumulation of gallium-67 frequently complicates the interpretation of gallium-67 scintigrams. Although various modes of cleansing the colon prior to scintigraphy have been suggested, there is controversy over their efficacy and none have been tested prospectively. Three hundred nine patients undergoing gallium-67 scintigraphy were randomly assigned to one of four cleansing regimens: (1) a high fiber diet (78 patients); (2) castor oil (76); (3) milk of magnesia and cascara (76); and (4) no preparation (79). Patient compliance rates for the four regimens were 17%, 32%, 36%, and 46%, respectively. After noncompliant patients were excluded, gallium-67 scintigrams were graded for colonic activity on a scale of 0-3 by three independent, experienced observers. Gallium-67 activity in the colon was significantly less after adminstration of castor oil than after no prepartion (p = 0.083). Regimen 3 did not produce significantly better results than regimen 4 (p = 0.42). A major impediment to the success of any cleansing regimen seems to be poor compliance of patients.

  6. Cleansing the colon in gallium-67 scintigraphy: a prospective comparison of regimens

    SciTech Connect

    Novetsky, G.J.; Turner, D.A.; Ali, A.; Raynor, W.J. Jr.; Fordham, E.W.

    1981-01-01

    Colonic accumulation of gallium-67 frequently complicates the interpretation of gallium-67 scintigrams. Although various modes of cleansing the colon prior to scintigraphy have been suggested, there is controversy over their efficacy and none have been tested prospectively. Three hundred nine patients undergoing gallium-67 scintigraphy were randomly assigned to one of four cleansing regimens: (1) a high fiber diet (78 patients); (2) castor oil (76); (3) milk of magnesia and cascara (76); and (4) not preparation (79). Patient compliance rates for the four regimens were 17%, 32%, 36%, and 46%, respectively. After noncompliant patients were excluded, gallium-67 scintigrams were graded for colonic activity on a scale of 0-3 by three independent, experienced observers. Gallium-67 activity in the colon was significantly less after administration of castor oil than after no preparation (p . 0.047). A high fiber diet also resulted in a substantial reduction of colonic activity when compared with no preparation; the difference, however, was not statistically significant (p . 0.083). Regimen 3 did not produce significantly better results than regimen 4 (p . 0.42). A major impediment to the success of any cleansing regimen seems to be poor compliance of patients.

  7. The global anthropogenic gallium system: determinants of demand, supply and efficiency improvements.

    PubMed

    Løvik, Amund N; Restrepo, Eliette; Müller, Daniel B

    2015-05-01

    Gallium has been labeled as a critical metal due to rapidly growing consumption, importance for low-carbon technologies such as solid state lighting and photovoltaics, and being produced only as a byproduct of other metals (mainly aluminum). The global system of primary production, manufacturing, use and recycling has not yet been described or quantified in the literature. This prevents predictions of future demand, supply and possibilities for efficiency improvements on a system level. We present a description of the global anthropogenic gallium system and quantify the system using a combination of statistical data and technical parameters. We estimated that gallium was produced from 8 to 21% of alumina plants in 2011. The most important applications of gallium are NdFeB permanent magnets, integrated circuits and GaAs/GaP-based light-emitting diodes, demanding 22-37%, 16-27%, and 11-21% of primary metal production, respectively. GaN-based light-emitting diodes and photovoltaics are less important, both with 2-6%. We estimated that 120-170 tons, corresponding to 40-60% of primary production, ended up in production wastes that were either disposed of or stored. While demand for gallium is expected to rise in the future, our results indicated that it is possible to increase primary production substantially with conventional technology, as well as improve the system-wide material efficiency. PMID:25884251

  8. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOEpatents

    Marks, Tobin J.; Chen, You-Xian

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  9. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOEpatents

    Marks, Tobin J.; Chen, You-Xian

    2002-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  10. Epitaxial Zinc Oxide Semiconductor Film deposited on Gallium Nitride Substrate

    NASA Astrophysics Data System (ADS)

    McMaster, Michael; Oder, Tom

    2011-04-01

    Zinc oxide (ZnO) is a wide bandgap semiconductor which is very promising for making efficient electronic and optical devices. The goal of this research was to produce high quality ZnO film on gallium nitride (GaN) substrate by optimizing the substrate temperature. The GaN substrates were chemically cleaned and mounted on a ceramic heater and loaded into a vacuum deposition chamber that was pumped down to a base pressure of 3 x 10-7 Torr. The film deposition was preceded by a 30 minute thermal desorption carried in vacuum at 500 ^oC. The ZnO thin film was then sputter-deposited using an O2/Ar gas mixture onto GaN substrates heated at temperatures varying from 20 ^oC to 500 ^oC. Post-deposition annealing was done in a rapid thermal processor at 900 ^oC for 5 min in an ultrapure N2 ambient to improve the crystal quality of the films. The films were then optically characterized using photoluminescence (PL) measurement with a UV laser excitation. Our measurements reveal that ZnO films deposited on GaN substrate held at 200 ^oC gave the best film with the highest luminous intensity, with a peak energy of 3.28 eV and a full width half maximum of 87.4 nm. Results from low temperature (10 K) PL measurements and from x-ray diffraction will also be presented.

  11. Investigation of a Gallium MPD Thruster with an Ablating Cathode

    NASA Technical Reports Server (NTRS)

    Thomas, Robert E.; Burton, Rodney L.; Polzin, Kurt A.

    2010-01-01

    Arc impedance, exhaust velocity, and plasma probe measurements are presented. The thruster is driven by a 50 microsecond pulse from a 6.2 milliohm pulse forming network, and gallium is supplied to the discharge by evaporation of the cathode. The arc voltage is found to vary linearly with the discharge current with an arc impedance of 6.5 milliohms. Electrostatic probes yield an exhaust velocity that is invariant with the discharge current and has a peak value of 20 kilometers per second, which is in reasonable agreement with the value (16 plus or minus 1 kilometer per second) calculated from the mass bit and discharge current data. Triple probe measurements yield on axis electron temperatures in the range of 0.8-3.8 eV, electron densities in the range of 1.6 x 10(exp 21) to 2.1 x 10(exp 22) per cubic meter, and a divergence half angle of 16 degrees. Measurements within the interelectrode region yield a peak magnetic field of 0.8 T, and the observed radial trends are consistent with an azimuthally symmetric current distribution. A cathode power balance model is coupled with an ablative heat conduction model predicting mass bit values that are within 20% of the experimental values.

  12. Low-temperature thermal conductivity of terbium-gallium garnet

    SciTech Connect

    Inyushkin, A. V. Taldenkov, A. N.

    2010-11-15

    Thermal conductivity of paramagnetic Tb{sub 3}Ga{sub 5}O{sub 12} (TbGG) terbium-gallium garnet single crystals is investigated at temperatures from 0.4 to 300 K in magnetic fields up to 3.25 T. A minimum is observed in the temperature dependence {kappa}(T) of thermal conductivity at T{sub min} = 0.52 K. This and other singularities on the {kappa}(T) dependence are associated with scattering of phonons from terbium ions. The thermal conductivity at T = 5.1 K strongly depends on the magnetic field direction relative to the crystallographic axes of the crystal. Experimental data are considered using the Debye theory of thermal conductivity taking into account resonance scattering of phonons from Tb{sup 3+} ions. Analysis of the temperature and field dependences of the thermal conductivity indicates the existence of a strong spin-phonon interaction in TbGG. The low-temperature behavior of the thermal conductivity (field and angular dependences) is mainly determined by resonance scattering of phonons at the first quasi-doublet of the electron spectrum of Tb{sup 3+} ion.

  13. Gallium in the Carlin-type gold deposits

    SciTech Connect

    Owens, P.A.; Ikramuddin, M.

    1985-01-01

    Gallium and aluminum are dispersed elements and are associated with each other because of their similar geochemical characteristics. The somewhat larger size of the Ga ion suggests that it may concentrate in residual melts and hydrothermal solutions. Ga and Al are also presumed to have different mobilities at a pH range of 3.4-4.1 and in alkaline solutions. Very little precise and accurate data exist on the concentration of Ga in hydrothermally altered rocks. In order to understand the behavior of Ga during hydrothermal processes and to explore the possibility of utilizing Ga as a guide to mineral deposits, unmineralized and mineralized rocks from four Carlin-type gold deposits were studied. Ga was analyzed by a newly developed precise and accurate method by electrothermal atomic absorption spectrophotometry. The Carlin-type gold deposits studied include Carlin and Alligator Ridge deposits of Nevada, Mercur deposit of Utah, and north Moccasin deposits of Montana. In all the mineralized areas there is more Ga in hydrothermally altered (mineralized) rocks than in unaltered (unmineralized) rocks. The enrichment factors for Ga differ from deposit to deposit. The highest enrichment of Ga is found in the north Moccasin deposits, where the average values in unmineralized and mineralized rocks are about 2 ppm and 10 ppm respectively. The oxidized mineralized rocks of the Carlin-type gold deposits have higher contents of Ga than carbonaceous rocks, while siliceous rocks contain the lowest Ga concentrations.

  14. Thermoluminescence in gallium sulfide crystals: an unusual heating rate dependence

    NASA Astrophysics Data System (ADS)

    Delice, S.; Bulur, E.; Gasanly, N. M.

    2015-03-01

    Trap centres in gallium sulfide single crystals have been investigated by thermoluminescence measurements in the temperature range of 10-230 K. A curve-fitting method was utilized to evaluate the activation energies (52, 200 and 304 meV) of the revealed three trap centres. The heating rate dependence and trap distribution of the peaks have been studied using experimental techniques based on various heating rates and various illumination temperatures, respectively. An anomalous heating rate dependence of the high-temperature peak was found by carrying out TL measurements with various heating rates between 0.2 and 1.0 K/s. This behaviour was explained on the basis of a semi-localized transition model. Whereas normal heating rate dependence was established for low-temperature peak, that is, the TL intensity of the glow curve decreases and the peak maximum temperature shifts to higher values with increasing the heating rate. Moreover, a quasi-continuous trap distribution with the increase of activation energies from 52 to 90 meV, from 200 to 268 meV and from 304 to 469 meV for the observed three different traps was established employing the various illumination temperatures method.

  15. Size-dependent pyroelectric properties of gallium nitride nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Jin; Wang, Chengyuan

    2016-04-01

    The size scale effect on the pyroelectric properties is studied for gallium nitride (GaN) nanowires (NWs) based on molecular dynamics simulations and the theoretical analysis. Due to the significant influence of the surface thermoelasticity and piezoelectricity at the nanoscale, the pyroelectric coefficient of GaN NWs is found to depend on the cross-sectional size. This size-dependent pyroelectric coefficient of GaN NWs together with the size-dependent dielectric constant reported in our previous study is employed to study the pyroelectric potential of GaN NWs subjected to heating. The results show that the size scale effect is significant for thin NWs (cross-sectional size in nanometers) and may raise the pyroelectric potential of GaN NWs by over 10 times. Such a size scale effect on the pyroelectric properties of NWs originates from the influence of thermoelasticity, piezoelectricity, and dielectricity at the nanoscale and decreases with increasing cross-section of GaN NWs. It is expected that the present study may have strong implication in the field of energy harvesting at the nanoscale, as pyroelectricity offers a new avenue to the design of novel nanogenerators.

  16. Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires

    PubMed Central

    2016-01-01

    Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material. PMID:27175743

  17. Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires.

    PubMed

    Greil, J; Assali, S; Isono, Y; Belabbes, A; Bechstedt, F; Valega Mackenzie, F O; Silov, A Yu; Bakkers, E P A M; Haverkort, J E M

    2016-06-01

    Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material. PMID:27175743

  18. Spin-phonon coupling in scandium doped gallium ferrite

    SciTech Connect

    Chakraborty, Keka R. E-mail: smyusuf@barc.gov.in; Mukadam, M. D.; Basu, S.; Yusuf, S. M. E-mail: smyusuf@barc.gov.in; Paul, Barnita; Roy, Anushree; Grover, Vinita; Tyagi, A. K.

    2015-03-28

    We embarked on a study of Scandium (Sc) doped (onto Ga site) gallium ferrite (GaFeO{sub 3}) and found remarkable magnetic properties. In both doped as well as parent compounds, there were three types of Fe{sup 3+} ions (depending on the symmetry) with the structure conforming to space group Pna2{sub 1} (Sp. Grp. No. 33) below room temperature down to 5 K. We also found that all Fe{sup 3+} ions occupy octahedral sites, and carry high spin moment. For the higher Sc substituted sample (Ga{sub 1−x}Sc{sub x}FeO{sub 3}: x = 0.3), a canted magnetic ordered state is found. Spin-phonon coupling below Néel temperature was observed in doped compounds. Our results indicated that Sc doping in octahedral site modifies spin-phonon interactions of the parent compound. The spin-phonon coupling strength was estimated for the first time in these Sc substituted compounds.

  19. Electrochemical desorption of hydrogen atoms adsorbed on liquid gallium

    SciTech Connect

    Krivenko, A.G.; Vekin, A.B.; Benderskii, V.A.

    1987-12-01

    Laser-pulse electron photoemission was used to measure absolute values of the rate constants, W/sub 3/, of electrochemical desorption (ECD) of hydrogen atoms from liquid gallium. The W/sub 3/ were shown to be a linear function of hydrogen concentration, in accord with the fact that both hydrogen ions and water molecules are involved in desorption. The components of W/sub 3/ arising from the two reaction channels are exponential functions of electrode potential, and in their order of magnitude (approx. 10/sup 8/ liter/mole x sec and approx. 10/sup 6/ sec/sup -1/) are close to the corresponding constants for mercury and bismuth. In the desorption involving hydrogen ions, the H/D isotope effect decreases from 5 to 3 as the overpotential is raised from 0.75 to 1.15 V. It was suggested that isotope effects which are higher than those found for Hg and Bi electrodes arise from longer proton tunneling distance.

  20. Vertical Bridgman growth of calcium lithium niobium gallium garnet crystals

    NASA Astrophysics Data System (ADS)

    Xu, Xuewu; Chong, Tow-Chong; Zhang, Guangyu; Li, Minghua; Soo, Lay Hiok; Xu, Wei; Freeman, Bill

    2003-03-01

    The growth of calcium lithium niobium gallium garnet (CLNGG) crystal has been carried out using platinum crucibles in a vertical Bridgman (VB) furnace with three resistance-heating zones. Transparent CLNGG crystals grown from the congruent melts with and without weight loss compensation are different in color and are 25 mm in diameter and about 70 mm in length. The phase identification of the sintered raw materials, grown crystals and white compound formed on the side surface of the grown crystal has been done using the powder X-ray diffraction method. The formation of the white compound is related to the {1 0 0} facet growth near the side surface. The naturally selected growth direction of the CLNGG crystal grown without a seed is near <1 1 1> , which is in good agreement with the morphological importance analysis according to the BFDH law. The VB-grown CLNGG also shows a cleavable feature parallel to {1 1 0} face and no absorption peaks in the wavelength range of 1100-1600 nm. The linear thermal-expansion coefficient of the CLNGG crystal along <1 1 1> direction is also reported and compared with that of CNGG, GGG and platinum crucible.

  1. Probing the Surface Defect States of Gallium Nitride Nanowires

    NASA Astrophysics Data System (ADS)

    Simonsen, Lauren; Yang, Yuchen; Borys, Nicholas; Ghimire, Anil; Schuck, James; Aloni, Shaul; Gerton, Jordan

    2016-03-01

    In this work, we investigate gallium nitride nanowires (NWs) as a potential system for solar-driven water splitting. Although bulk GaN has a UV bandgap, the synthesized NWs exhibit strong absorption and fluorescence emission across the visible spectrum. Density functional theory calculations suggest that this visible fluorescence originates from mid-gap surface-defect states along the triangular facets of the NWs. The orientation of the NWs can be controlled during MOCVD growth, leading to different exposed crystallographic surface terminations with various electronic structures. High resolution microscopy techniques using AFM and confocal hyper-spectral imaging show spectral inhomogeneity across the widths of the NWs, providing evidence that various crystallographic terminations produce different surface states. These NWs also exhibit wave guiding properties, leading to Fabry-Perot fringes and high intensity spectra at the ends of the wires. Photoluminescence excitation spectroscopy reveals a non-linear dependence of the emission spectral features on excitation wavelength, indicating a complex distribution of mid-gap defect states. Time-resolved spectroscopy reveals non-exponential decay dynamics through a complicated manifold of mid-gap states.

  2. Probing the Surface Defect States of Gallium Nitride Nanowires

    NASA Astrophysics Data System (ADS)

    Simonsen, Lauren; Yang, Yuchen; Borys, Nicholas; Ghimire, Anil; Schuck, James; Aloni, Shaul; Gerton, Jordan

    In this work, we investigate gallium nitride nanowires (NWs) as a potential system for solar-driven water splitting. Although bulk GaN has a UV bandgap, the synthesized NWs exhibit strong absorption and fluorescence emission across the visible spectrum. Density functional theory calculations suggest that this visible fluorescence originates from mid-gap surface-defect states along the triangular facets of the NWs. The orientation of the NWs can be controlled during MOCVD growth, leading to different exposed crystallographic surface terminations with different electronic structures. High resolution microscopy techniques using AFM and confocal hyper-spectral imaging show spectral inhomogeneity across the widths of the NWs, providing evidence that various crystallographic terminations produce different surface states. These NWs also exhibit wave guiding properties, leading to Fabry-Perot fringes and high intensity spectra and the ends of the wires. Photoluminescence excitation spectroscopy reveals a non-linear dependence of the emission spectral features on excitation wavelength, indicating a complex distribution of mid-gap defect states. Time-resolved spectroscopy reveals non-exponential decay dynamics through a complicated manifold of mid-gap states.

  3. Gate modulation of anodically etched gallium arsenide nanowire random network

    NASA Astrophysics Data System (ADS)

    Aikawa, Shinya; Yamada, Kohei; Asoh, Hidetaka; Ono, Sachiko

    2016-06-01

    Gallium arsenide nanowires (GaAs NWs) formed by anodic etching show an electrically semi-insulating behavior because of charge carrier depletion caused by high interface state density. Here, we demonstrate the gate modulation of an anodically etched GaAs NW random network. By applying a reverse bias voltage after anodic etching of bulk GaAs, hydrogen ion exposure of the depleted NW region occurs, and then the interface state density is possibly decreased owing to the reduction in the amount of excess As generated at the interface between the amorphous Ga2O3 and GaAs layers. Consequently, the drain current of the thin-film transistor (TFT) with the GaAs NW random network was increased and was changed by the gate voltage. In contrast, the random network film remained in the insulator in the absence of reverse electrolysis treatment. The TFT performance is still insufficient but may be improved by optimizing the hydrogen ion exposure conditions.

  4. Greyscale proton beam writing in p-type Gallium Arsenide

    NASA Astrophysics Data System (ADS)

    Diering, D.; Spemann, D.; Lenzner, J.; Müller, St.; Böntgen, T.; von Wenckstern, H.

    2013-07-01

    Proton beam writing (PBW) is a well known method for micromachining, e.g. of semiconductors. Up to now, only few indication is given on how the resulting structure height in micromachined semiconductors can be controlled by means of fluence variation. This approach for 3D-microstructuring, called Greyscale PBW, was already successfully demonstrated for negative photoresists. In this study (1 0 0) p-type Gallium Arsenide (GaAs) was irradiated with 2.28 MeV protons and fluences in the range from 1.2×1014 H+ cm-2 to 1.0×1018 H+ cm-2 at the ion beam laboratory LIPSION and subsequently electrochemically etched with 10%-KOH. A linear dependency of structure height on ion fluence was established. In this way, pyramid-like structures as well as concave-shaped structures could be created. GaAs showed a lateral anisotropic etch behaviour during the development step with preferential etching along the [0 1 1] directions. On some structures the surface roughness and the change of conductivity were investigated by atomic force and scanning capacitance microscopy, respectively. The rms roughness of the surface of the structures was 5.4 nm and 10.6 nm for a fluence of 7.8×1015 H+ cm-2 and 1.2×1017 H+ cm-2, respectively. We observed an increasing etching rate for fluences larger than 1016 H+ cm-2.

  5. Gallium arsenide pilot line for high performance components

    NASA Astrophysics Data System (ADS)

    1990-01-01

    The Gallium Arsenide Pilot Line for High Performance Components (Pilot Line III) is to develop a facility for the fabrication of GaAs logic and memory chips. The first thirty months of this contract are now complete, and this report covers the period from March 27 through September 24, 1989. Similar to the PT-2M SRAM function for memories, the six logic circuits of PT-2L and PT-2M have served their functions as stepping stones toward the custom, standard cell, and cell array logic circuits. All but one of these circuits was right first time; the remaining circuit had a layout error due to a bug in the design rule checker that has since been fixed. The working devices all function over the full temperature range from -55 to 125 C. They all comfortably meet the 200 MHz requirement. They do not solidly conform to the required input and output voltage levels, particularly Vih. It is known that these circuits were designed with the older design models and that they came from an era where the DFET thresholds were often not on target.

  6. LASERS: Efficient neodymium-doped gadolinium gallium garnet crystal laser

    NASA Astrophysics Data System (ADS)

    Doroshenko, Maxim E.; Osiko, Vyacheslav V.; Sigachev, V. B.; Timoshechkin, M. I.

    1991-07-01

    An investigation was made of the stimulated emission parameters of a laser utilizing a gadolinium gallium garnet crystal doped with neodymium ions (YAG:Nd) at the 1.062 μm wavelength. The free-running efficiency was the highest so far achieved for flashlamp-pumped lasers utilizing unsensitized garnets. For an active element 8 mm in diameter and 120 mm long the absolute efficiency was 5.4% and the differential efficiency was 5.9%. The average free-running power was 170 W. A comparison was made of the optical powers of thermal lenses in cylindrical GGG:Nd and YAG:Nd active elements and this was found to be 2.4 times higher for a GGG:Nd crystal at the same pump powers. It was shown that by using traditional methods of compensating for the thermal lens in cylindrical active elements, it is possible to develop pulsed GGG:Nd crystal lasers having an average output power higher than 100 W, an efficiency of ~ 4%, and an angular divergence of less than 10 mrad.

  7. Investigation of radiation defects in gallium arsenide under hydrostatic pressure

    SciTech Connect

    Brudnyi, V.N.; Vilisov, A.A.; Diamant, V.M.; Krivorotov, N.P.

    1980-01-01

    The spectral characteristics of gallium arsenide photodiodes irradiated with electrons (2 MeV, 300/sup 0/K) were used to study the influence of hydrostatic compression (up to 8 kbar) and temperature (77--300/sup 0/K) on the energy positions of radiation-defect levels. The pressure coefficients of the spectral positions of the impurity absorption bands at 1.2 and 1.37 eV indicated a genetic relationship between localized states H/sub 0/ (approx.E/sub v/+0.1 eV) and H/sub 1/ (approx.E/sub v/+0.25 eV) and the band extrema E/sub v/(GAMMA/sub 15/) and E/sub c/(GAMMA/sub 1/), respectively. The high piezoresistance coefficient (1/rho)(drho/dP)approx. =3.5 x 10/sup -4/ bar/sup -1/, recorded for the first time for n-type GaAs compensated by electron irradiation, was attributed to the influence of a state split off from the valence band and located in the upper half of the band gap at E/sub c/-0.3--0.4 eV. Isochronous annealing of radiation defects was investigated in the temperature range 300--35/sup 0/K.

  8. Thickness-induced structural phase transformation of layered gallium telluride.

    PubMed

    Zhao, Q; Wang, T; Miao, Y; Ma, F; Xie, Y; Ma, X; Gu, Y; Li, J; He, J; Chen, B; Xi, S; Xu, L; Zhen, H; Yin, Z; Li, J; Ren, J; Jie, W

    2016-07-28

    The thickness-dependent electronic states and physical properties of two-dimensional materials suggest great potential applications in electronic and optoelectronic devices. However, the enhanced surface effect in ultra-thin materials might significantly influence the structural stability, as well as the device reliability. Here, we report a spontaneous phase transformation of gallium telluride (GaTe) that occurred when the bulk was exfoliated to a few layers. Transmission electron microscopy (TEM) results indicate a structural variation from a monoclinic to a hexagonal structure. Raman spectra suggest a critical thickness for the structural transformation. First-principle calculations and thermodynamic analysis show that the surface energy and the interlayer interaction compete to dominate structural stability in the thinning process. A two-stage transformation process from monoclinic (m) to tetragonal (T) and then from tetragonal to hexagonal (h) is proposed to understand the phase transformation. The results demonstrate the crucial role of interlayer interactions in the structural stability, which provides a phase engineering strategy for device applications. PMID:27198938

  9. Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

    NASA Astrophysics Data System (ADS)

    Kim, Jun Ho; Kim, Da-Som; Kim, Sun-Kyung; Yoo, Young-Zo; Lee, Jeong Hwan; Kim, Sang-Woo; Seong, Tae-Yeon

    2016-08-01

    In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm-3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke's figure of merit (FOM) was calculated to be 1.94 × 10-3 for the ITO film and 45.02 × 10-3 Ω-1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

  10. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    SciTech Connect

    Yang, Seong-Uk; Jung, Woo-Shik; Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho; Park, Jin-Hong

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  11. Novel ethylenediamine-gallium phosphate containing 6-fold coordinated gallium atoms with unusual four equatorial Ga-N bonds

    NASA Astrophysics Data System (ADS)

    Torre-Fernández, Laura; Espina, Aránzazu; Khainakov, Sergei A.; Amghouz, Zakariae; García, José R.; García-Granda, Santiago

    2014-07-01

    A novel ethylenediamine-gallium phosphate, formulated as Ga(H2NCH2CH2NH2)2PO4·2H2O, was synthesized under hydrothermal conditions. The crystal structure, including hydrogen positions, was determined using single-crystal X-ray diffraction data (monoclinic, a=9.4886(3) Å, b=6.0374(2) Å, c=10.2874(3) Å, and β=104.226(3)°, space group Pc) and the bulk was characterized by chemical (Ga-P-C-H-N) and thermal analysis (TG-MS and DSC), including activation energy data of its thermo-oxidative degradation, powder X-ray diffraction (PXRD), solid-state nuclear magnetic resonance (SS-NMR) measurements, and transmission electron microscopy (TEM, SAED/NBD, and STEM BF-EDX). The crystal structure is built up of infinite zig-zag chains running along the c-axis, formed by vertex-shared {PO4} and {GaO2N4} polyhedra. The new compound is characterized by unusual four equatorial Ga-N bonds coming from two nonequivalent ethylenediamine molecules and exhibits strong blue emission at 430 nm (λex=350 nm) in the solid state at room temperature.

  12. Total neutron scattering investigation of the structure of a cobalt gallium oxide spinel prepared by solvothermal oxidation of gallium metal.

    PubMed

    Playford, Helen Y; Hannon, Alex C; Tucker, Matthew G; Lees, Martin R; Walton, Richard I

    2013-11-13

    A new solvothermal synthesis route to mixed-metal gallium oxides with the spinel structure has been developed for ternary oxides of ideal composition Ga(3-x)M(x)O(4-y) (M=Co, Zn, Ni). The structure of the novel cobalt gallate produced in this manner, Ga(1.767(8))Co(0.973(8))O(3.752(8)), has been determined from total neutron scattering to be a partially defective spinel with mixed-valent cobalt (approximately 25% Co(3+) and 75% Co(2+)) and with vacancies on approximately 6% of oxygen sites. Pair distribution function (PDF) analysis reveals significant local deviations from the average cubic structure, which are attributed to the conflicting coordination preferences of the Co(2+) (potential Jahn-Teller distortion) and Ga(3+) (Ga off-centring). Reverse Monte Carlo (RMC) modelling supports this conclusion since different metal-oxygen bond-distance distributions are found for the two cations in the refined configuration. An investigation of magnetic properties shows evidence of short-range magnetic order and spin-glass-like behaviour, consistent with the structural disorder of the material. PMID:24141264

  13. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    SciTech Connect

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  14. Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

    NASA Astrophysics Data System (ADS)

    Kim, Jun Ho; Kim, Da-Som; Kim, Sun-Kyung; Yoo, Young-Zo; Lee, Jeong Hwan; Kim, Sang-Woo; Seong, Tae-Yeon

    2016-05-01

    In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm-3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke's figure of merit (FOM) was calculated to be 1.94 × 10-3 for the ITO film and 45.02 × 10-3 Ω-1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

  15. Gallium-based thermal interface material with high compliance and wettability

    NASA Astrophysics Data System (ADS)

    Gao, Yunxia; Liu, Jing

    2012-06-01

    This study reports a gallium-based thermal interface material (GBTIM) consisting of gallium oxides dispersed uniformly into the 99 % gallium metal. The wettability of GBTIM with other materials is disclosed and compared. The thermal conductivity of GBTIM measured by a computer-controlled Mathis TCi thermal analyzer is ˜13.07 W m-1 K-1 at room temperature, which is significantly higher than that of conventional thermal greases. An experimental facility is described to measure the thermal resistance across the GBTIM under steady-state conditions and the thermal interface resistance is measured as low as 2.6 mm2 kW-1 with a pressure of 0.05 MPa, which is an order lower than that of the best commercialized thermal greases. Further, the GBTIM is formed into a desired shape to enhance thermal transfer, such as semi-liquid paste or thermal pad, which can be cut into a required shape.

  16. Process for producing gallium-containing solution from aluminum smelting dust

    SciTech Connect

    Ikeda, H.; Matsui, S.; Era, A.

    1988-02-16

    A process for producing a gallium-containing solution from aluminum smelting dust is described comprising mixing aluminum smelting dust with 5 to 50% by weight of an alkaline flux selected from the group consisting of sodium carbonate, sodium hydroxide, potassium carbonate, potassium hydroxide and mixtures thereof, heating the mixture to a temperature sufficient to roast the mixture without fusing the mixture, leaching the roasted mixture at a temperature of 80/sup 0/C. to 100/sup 0/C. with a mineral acid selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid and mixtures thereof to preferentially solubilize gallium from other material in the roasted mixture, and filtering the leached mixture to separate the solubilized gallium solution therefrom.

  17. 67Gallium citrate scintigraphy to assess metastatic spread in a dog with an oral melanoma.

    PubMed

    Liuti, T; de Vos, J; Bosman, T; van de Wiele, C; Grinwis, G C M; van Bree, H; Peremans, K

    2009-01-01

    Gallium scintigraphy was used to evaluate therapeutic response in a 10-year-old, male, Dutch sheepdog, suffering from an oral melanoma. Treatment was performed with a combination of carboplatin and hypofractionated radiation. Nineteen weeks after radiation therapy, the left submandibular lymph node was surgically removed because of metastatic disease. Thirty weeks after radiation therapy, 67Gallium scintigraphy was performed to assess for residual disease and metastasis. Increased uptake in the right submandibular lymph node area was noted and identified as a melanoma metastasis on cytology. Surgical excision was performed. Twenty-one weeks later, the dog was euthanased because of advanced pulmonary metastases. This report of a case of oral melanoma illustrates the advantages of 67Gallium scintigraphy in monitoring for the presence of metastatic disease and effectiveness of therapy. PMID:19037892

  18. Preparation of a smooth GaN-Gallium solid-liquid interface

    NASA Astrophysics Data System (ADS)

    de Jong, A. E. F.; Vonk, V.; Ruat, M.; Boćkowski, M.; Kamler, G.; Grzegory, I.; Honkimäki, V.; Vlieg, E.

    2016-08-01

    We discuss the preparation of an atomically flat solid-liquid interface between solid gallium nitride and liquid gallium using in situ surface X-ray diffraction to probe the interface roughness. For the creation of this interface it is necessary to start the experiment with liquid gallium which first etches into the solid at a temperature of 823 K in a nitrogen free ambient. After this rigorous cleaning procedure there is perfect wetting between solid and liquid. The roughness created due to the fast etching of the solid has to be repaired at a nitrogen pressure of 10-20 bar and a temperature around 1150 K. The (2,1) crystal truncation rod data are excellently described by a surface model having 0±0.1 Å roughness, which indicates a successful repair. The lateral length scale on which the roughness is determined has a lower limit of 750±50 Å.

  19. Quantitative separation of gallium from other elements by cation-exchange chromatography

    SciTech Connect

    van der Walt, T.N.; Strelow, F.W.E.

    1983-02-01

    Trace amounts and up to 1.5 mg of gallium can be separated from up to gram amounts of Al, Cd, Cu, In, Mn, Ni, Pb, U(VI), and many other elements by eluting these elements with 8.0 M hydrochloric acid from a column containing 13.0 mL (3.0 g) of AG 50W-X4 cation-exchange resin of 100-200 mesh particle size in the H-form. Gallium can be separated from up to 2 g of iron(II) and up to 10 mg of scandium by eluting the iron with 8.0 M hydrochloric acid containing 0.30% titanium(III) chloride and eluting the scandium with 7.0 M hydrochloric acid. The retained gallium is effectively eluted with 2.5 M hydrochloric acid. Separations are sharp and quantitative. 5 figures, 3 tables.

  20. Gallium nitrate induces fibrinogen flocculation: an explanation for its hemostatic effect?

    PubMed

    Bauters, A; Holt, D J; Zerbib, P; Rogosnitzky, M

    2013-12-01

    A novel hemostatic effect of gallium nitrate has recently been discovered. Our aim was to perform a preliminary investigation into its mode of action. Thromboelastography® showed no effect on coagulation but pointed instead to changes in fibrinogen concentration. We measured functional fibrinogen in whole blood after addition of gallium nitrate and nitric acid. We found that gallium nitrate induces fibrinogen precipitation in whole blood to a significantly higher degree than solutions of nitric acid alone. This precipitate is not primarily pH driven, and appears to occur via flocculation. This behavior is in line with the generally observed ability of metals to induce fibrinogen precipitation. Further investigation is required into this novel phenomenon. PMID:23959335

  1. Crystal chemistry and self-lubricating properties of monochalcogenides gallium selenide and tin selenide

    SciTech Connect

    Erdemir, A.

    1993-02-01

    This paper describes the fundamentals of the crystal chemistry and self-lubricating mechanisms of two monochalcogenides; tin selenide and gallium selenide. Specifically, it enumerates their inter-atomic array and bond structure in crystalline states, and correlates this fundamental knowledge with their self-lubricating capacity. Friction tests assessing the self-lubricating performance of gallium and tin selenides were carried out on a pin-on-disk machine. Specifically, large crystalline pieces of gallium selenide and tin selenide were cut and cleaved into flat squares and subsequently rubbed against the sapphire balls. In another case, the fine powders (particle size {approx} 50--100 {mu}m) of gallium selenide and tin selenide were manually fed into the sliding interfaces of 440C pins and 440C disks. For the specific test conditions explored, it was found that the friction coefficients of the sapphire/gallium selenide and sapphire/tin selenide pairs were {approx} 0.23 and {approx} 0.35, respectively. The friction coefficients of 440C pin/440C disk test pairs with gallium selenide and tin selenide powders were on the orders of {approx} 0.22 and {approx} 0.38, respectively. For comparison, a number of parallel friction tests were performed with MoS{sub 2} powders and compacts and the results of these tests were also reported. The friction data together with the crystal-chemical knowledge and the electron microscopic evidence supported the conclusion that the lubricity and self-lubricating mechanisms of these solids are closely related to their crystal chemistry and the nature of interlayer bonding.

  2. Metal alloy identifier

    DOEpatents

    Riley, William D.; Brown, Jr., Robert D.

    1987-01-01

    To identify the composition of a metal alloy, sparks generated from the alloy are optically observed and spectrographically analyzed. The spectrographic data, in the form of a full-spectrum plot of intensity versus wavelength, provide the "signature" of the metal alloy. This signature can be compared with similar plots for alloys of known composition to establish the unknown composition by a positive match with a known alloy. An alternative method is to form intensity ratios for pairs of predetermined wavelengths within the observed spectrum and to then compare the values of such ratios with similar values for known alloy compositions, thereby to positively identify the unknown alloy composition.

  3. Results of the Gallium-Clad Phase 3 and Phase 4 tasks (canceled prior to completion)

    SciTech Connect

    Morris, R.N.

    1998-08-01

    This report summarizes the results of the Gallium-Clad interactions Phase 3 and 4 tasks. Both tasks were to involve examining the out-of-pile stability of residual gallium in short fuel rods with an imposed thermal gradient. The thermal environment was to be created by an electrical heater in the center of the fuel rod and coolant flow on the rod outer cladding. Both tasks were canceled due to difficulties with fuel pellet fabrication, delays in the preparation of the test apparatus, and changes in the Fissile Materials Disposition program budget.

  4. Growth of epitaxial bismuth and gallium substituted lutetium iron garnet films by pulsed laser deposition

    SciTech Connect

    Leitenmeier, Stephan; Heinrich, Andreas; Lindner, Joerg K. N.; Stritzker, Bernd

    2006-04-15

    Epitaxial bismuth and gallium substituted lutetium iron garnet thin films have been grown on (100) oriented gadolinium gallium garnet Gd{sub 3}Ga{sub 5}O{sub 12} substrates by pulsed laser deposition. The films have been studied using x-ray diffraction, high resolution x-ray diffraction, Rutherford backscattering spectroscopy, transmission electron microscopy, and electron diffraction. We obtained smooth films with thicknesses between 0.3 and 1.0 {mu}m showing good crystalline quality and epitaxial growth.

  5. Recovery of gallium and arsenic from GaAs wafer manufacturing slurries

    SciTech Connect

    Jadvar, R.; McCoy, B.J. ); Ford, B.; Galt, J. )

    1991-11-01

    Lapping and polishing slurries from the gallium arsenide (GaAs) wafer manufacturing process were used to develop simple and inexpensive methods for separation and recovery of valuable gallium and toxic arsenic. The lapping slurry, containing GaAs, glycerol, alumina, iron oxide, and water, is treated by a process involving water addition, dissolution of GaAs, mixing, sedimentation, decantation, and evaporation. The polishing slurry, containing GaAs, silica, sodium bicarbonate, sodium hypochlorite and water, is treated simply by a repetitive cycle of adding water, mixing, settling, decanting, and evaporating. After treatment, the slurries contain less than 5 ppm of dissolved arsenic and are considered non-hazardous.

  6. Percolation of gallium dominates the electrical resistance of focused ion beam deposited metals

    SciTech Connect

    Faraby, H.; DiBattista, M.; Bandaru, P. R.

    2014-04-28

    Metal deposition through focused ion beam (FIB) based systems is thought to result in material composed of the primary metal from the metallo-organic precursor in addition to carbon, oxygen, and gallium. We determined, through electrical resistance and chemical composition measurements on a wide range of FIB deposited platinum and tungsten lines, that the gallium ion (Ga{sup +}) concentration in the metal lines plays the dominant role in controlling the electrical resistivity. Effective medium theory, based on McLachlan's formalisms, was used to describe the relationship between the Ga{sup +} concentration and the corresponding resistivity.

  7. The clinical significance of radionuclide bone and gallium scanning in osteomyelitis of the head and neck

    SciTech Connect

    Noyek, A.M.; Kirsh, J.C.; Greyson, N.D.; Wortzman, G.; Jazrawy, H.; Freeman, J.L.; Blair, R.L.; Chapnik, J.S.

    1984-05-01

    Osteomyelitis of the head and neck remains a difficult clinical problem both in diagnosis and treatment evaluation. The purpose of this manuscript is to review our clinical experience with 25 cases of osteomyelitis distributed evenly among the temporal bone and skull base, the paranasal sinuses, and the mandible. Radionuclide bone and gallium scan images accurately depicted the biologic activity of the disease process and permitted accurate treatment evaluation and patient monitoring. This work demonstrates the potentials and limitations of radionuclide imaging with bone and gallium scan agents and attempts to define a role for their contemporary use in the management of osteomyelitis of the head and neck.

  8. Patterns of gallium-67 scintigraphy in patients with acquired immunodeficiency syndrome and the AIDS related complex

    SciTech Connect

    Bitran, J.; Bekerman, C.; Weinstein, R.; Bennett, C.; Ryo, U.; Pinsky, S.

    1987-07-01

    Thirty-two patients with AIDS related complex (ARC) or acquired immunodeficiency syndrome (AIDS) underwent /sup 67/Ga scans as part of their evaluation. Three patterns of /sup 67/Ga biodistribution were found: lymph node uptake alone; diffuse pulmonary uptake; normal scan. Gallium-67 scans were useful in identifying clinically occult Pneumocystis carinii pneumonia in seven of 15 patients with ARC who were asymptomatic and had normal chest radiographs. Gallium scans are a useful ancillary procedure in the evaluation of patients with ARC or AIDS.

  9. Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power Transistors

    NASA Technical Reports Server (NTRS)

    Patterson, Richard L.; Boomer, Kristen T.; Scheick, Leif; Lauenstein, Jean-Marie; Casey, Megan; Hammoud, Ahmad

    2014-01-01

    The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.

  10. Gallium-SPECT in the detection of prosthetic valve endocarditis and aortic ring abscess

    SciTech Connect

    O'Brien, K.; Barnes, D.; Martin, R.H.; Rae, J.R. )

    1991-09-01

    A 52-yr-old man who had a bioprosthetic aortic valve developed Staphylococcus aureus bacteremia. Despite antibiotic therapy he had persistent pyrexia and developed new conduction system disturbances. Echocardiography did not demonstrate vegetations on the valve or an abscess, but gallium scintigraphy using SPECT clearly identified a focus of intense activity in the region of the aortic valve. The presence of valvular vegetations and a septal abscess was confirmed at autopsy. Gallium scintigraphy, using SPECT, provided a useful noninvasive method for the demonstration of endocarditis and the associated valve ring abscess.

  11. Calculation of Gallium-metal-Arsenic phase diagrams

    NASA Technical Reports Server (NTRS)

    Scofield, J. D.; Davison, J. E.; Ray, A. E.; Smith, S. R.

    1991-01-01

    Electrical contacts and metallization to GaAs solar cells must survive at high temperatures for several minutes under specific mission scenarios. The determination of which metallizations or alloy systems that are able to withstand extreme thermal excursions with minimum degradation to solar cell performance can be predicted by properly calculated temperature constitution phase diagrams. A method for calculating a ternary diagram and its three constituent binary phase diagrams is briefly outlined and ternary phase diagrams for three Ga-As-X alloy systems are presented. Free energy functions of the liquid and solid phase are approximated by the regular solution theory. Phase diagrams calculated using this method are presented for the Ga-As-Ge and Ga-As-Ag systems.

  12. Immunosensing platform based on gallium nanoparticle arrays on silicon substrates.

    PubMed

    García Marín, Antonio; Hernández, María Jesús; Ruiz, Eduardo; Abad, Jose María; Lorenzo, Encarnación; Piqueras, Juan; Pau, Jose Luis

    2015-12-15

    Gallium nanoparticles (GaNPs) of different sizes are deposited on Si(100) substrates by thermal evaporation. Through ellipsometric analysis, it is possible to investigate the plasmonic effects in the GaNPs and exploit them to develop biosensors. The excitation of the resonant modes for certain incidence angles leads to negative values of the imaginary part of the pseudodielectric function (<εi>) obtained in ellipsometry. Furthermore, there is an abrupt sign change when the difference between the phase shifts of p- and s-polarization components reaches 180° at an energy of around 3.15 eV. At that energy, reversal of the polarization handedness (RPH) occurs for an elliptically-polarized input beam. The energy of the RPH condition reduces as the evaporation time increases. The slope of <εi> at the RPH condition is extremely sensitive to changes in the surrounding medium of the NP surface and prompts the use of the GaNP/Si system as sensor platform. Fourier transformed infrared spectroscopy (FTIR) is used before and after functionalization with 3,3'-dithiodipropionic acid di(N-succinimidyl ester) and a glutathione-specific antibody to confirm the chemical modification of the sample surface. The developed immunosensor is exposed to different concentrations of glutathione (GSH) showing a linear relationship between the slope of the pseudodielectric function at the RPH condition and the GSH concentration. The immunosensor shows a limit of detection of 10nM enabling its use for the detection of low GSH levels in different medical conditions. PMID:26276543

  13. Combined Silicon and Gallium Arsenide Solar Cell UV Testing

    NASA Technical Reports Server (NTRS)

    Willowby, Douglas

    2005-01-01

    The near and long-term effect of UV on silicon solar cells is relatively understood. In an effort to learn more about the effects of UV radiation on the performance of GaAs/Ge solar cells, silicon and gallium arsenide on germanium (GaAs/Ge) solar cells were placed in a vacuum chamber and irradiated with ultraviolet light by a Spectrolab XT 10 solar simulator. Seventeen GaAs/Ge and 8 silicon solar cells were mounted on an 8 inch copper block. By having all the cells on the same test plate we were able to do direct comparison of silicon and GaAs/Ge solar cell degradation. The test article was attached to a cold plate in the vacuum chamber to maintain the cells at 25 degrees Celsius. A silicon solar cell standard was used to measure beam uniformity and any degradation of the ST-10 beam. The solar cell coverings tested included cells with AR-0213 coverglass, fused silica coverglass, BRR-0213 coverglass and cells without coverglass. Of interest in the test is the BRR-0213 coverglass material manufactured by OCLI. It has an added Infrared rejection coating to help reduce the solar cell operating temperature. This coverglass is relatively new and of interest to several current and future programs at Marshall. Due to moves of the laboratory equipment and location only 350 hours of UV degradation have been completed. During this testing a significant leveling off in the rate of degradation was reached. Data from the test and comparisons of the UV effect of the bare cells and cells with coverglass material will be presented.

  14. Gallium-68 EDTA PET/CT for Renal Imaging.

    PubMed

    Hofman, Michael S; Hicks, Rodney J

    2016-09-01

    Nuclear medicine renal imaging provides important functional data to assist in the diagnosis and management of patients with a variety of renal disorders. Physiologically stable metal chelates like ethylenediaminetetraacetic acid (EDTA) and diethylenetriamine penta-acetate (DTPA) are excreted by glomerular filtration and have been radiolabelled with a variety of isotopes for imaging glomerular filtration and quantitative assessment of glomerular filtration rate. Gallium-68 ((68)Ga) EDTA PET usage predates Technetium-99m ((99m)Tc) renal imaging, but virtually disappeared with the widespread adoption of gamma camera technology that was not optimal for imaging positron decay. There is now a reemergence of interest in (68)Ga owing to the greater availability of PET technology and use of (68)Ga to label other radiotracers. (68)Ga EDTA can be used a substitute for (99m)Tc DTPA for wide variety of clinical indications. A key advantage of PET for renal imaging over conventional scintigraphy is 3-dimensional dynamic imaging, which is particularly helpful in patients with complex anatomy in whom planar imaging may be nondiagnostic or difficult to interpret owing to overlying structures containing radioactive urine that cannot be differentiated. Other advantages include accurate and absolute (rather than relative) camera-based quantification, superior spatial and temporal resolution and integrated multislice CT providing anatomical correlation. Furthermore, the (68)Ga generator enables on-demand production at low cost, with no additional patient radiation exposure compared with conventional scintigraphy. Over the past decade, we have employed (68)Ga EDTA PET/CT primarily to answer difficult clinical questions in patients in whom other modalities have failed, particularly when it was envisaged that dynamic 3D imaging would be of assistance. We have also used it as a substitute for (99m)Tc DTPA if unavailable owing to supply issues, and have additionally examined the role of

  15. Synthesis and characterisation of chromium lutetium gallium garnet solid solution

    SciTech Connect

    Galindo, R.; Badenes, J.A. . E-mail: jbadenes@qio.uji.es; Llusar, M.; Tena, M.A.; Monros, G.

    2007-03-22

    The chromium lutetium gallium garnet system has been studied. Samples with 2xCaOxCr{sub 2}O{sub 3}(3 - 2x)Lu{sub 2}O{sub 3}5Ga{sub 2}O{sub 3} (x = 0.025, 0.05, 0.075, 0.1, 0.2 and 0.3,) and xCr{sub 2}O{sub 3}(3 - x)Lu{sub 2}O{sub 3}5Ga{sub 2}O{sub 3} (x = 0, 0.05, 0.075 and 0.3) compositions have been prepared in Ca,Cr:LGG and Cr:LGG systems, respectively. Samples were prepared by ceramic method, fired at 1250 deg. C/6 h and characterised by XRD, lattice parameters, UV-vis-NIR spectroscopy, CIE L * a * b * measurements and SEM/EDX. Results indicate that Ca,Cr:LGG and Cr:LGG solid solutions are obtained. In Cr:LGG system only Cr(III) is stabilised in octahedral positions substituting for Lu(III) and Ga(III). Both Cr(III) and Cr(IV) are present in Ca,Cr:LGG. The calcium is a charge compensator to stabilise Cr(IV) and this is the predominant oxidation state up to x = 0.075 composition. From this composition, Cr(III) becomes more stabilised in garnet lattice. Cr(IV) occupies generally tetrahedral and dodecahedral sites substituting for Ga(III) and Lu(III), while Cr(III) is in octahedral site substituting for Ga(III)

  16. Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.

    2005-01-01

    Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

  17. Gallium-cladding compatibility testing plan: Phase 3 -- Test plan for centrally heated surrogate rodlet test. Revision 2

    SciTech Connect

    Morris, R.N.; Baldwin, C.A.; Wilson, D.F.

    1998-07-01

    The Fissile Materials Disposition Program (FMDP) is investigating the use of weapons grade plutonium in mixed oxide (MOX) fuel for light-water reactors (LWR). Commercial MOX fuel has been successfully used in overseas reactors for many years; however, weapons derived fuel may differ from the previous commercial fuels because of small amounts of gallium impurities. A concern presently exists that the gallium may migrate out of the fuel, react with and weaken the clad, and thereby promote loss of fuel pin integrity. Phases 1 and 2 of the gallium task are presently underway to investigate the types of reactions that occur between gallium and clad materials. This is a Level-2 document as defined in the Fissile Materials Disposition Program Light-Water Reactor Mixed-Oxide Fuel Irradiation Test Project Plan. This Plan summarizes the projected Phase 3 Gallium-Cladding compatibility heating test and the follow-on post test examination (PTE). This work will be performed using centrally-heated surrogate pellets, to avoid unnecessary complexities and costs associated with working with plutonium and an irradiation environment. Two sets of rodlets containing pellets prepared by two different methods will be heated. Both sets will have an initial bulk gallium content of approximately 10 ppm. The major emphasis of the PTE task will be to examine the material interactions, particularly indications of gallium transport from the pellets to the clad.

  18. Iron-Targeting Antitumor Activity of Gallium Compounds and Novel Insights Into Triapine®-Metal Complexes

    PubMed Central

    Antholine, William E.

    2013-01-01

    Abstract Significance: Despite advances made in the treatment of cancer, a significant number of patients succumb to this disease every year. Hence, there is a great need to develop new anticancer agents. Recent Advances: Emerging data show that malignant cells have a greater requirement for iron than normal cells do and that proteins involved in iron import, export, and storage may be altered in cancer cells. Therefore, strategies to perturb these iron-dependent steps in malignant cells hold promise for the treatment of cancer. Recent studies show that gallium compounds and metal-thiosemicarbazone complexes inhibit tumor cell growth by targeting iron homeostasis, including iron-dependent ribonucleotide reductase. Chemical similarities of gallium(III) with iron(III) enable the former to mimic the latter and interpose itself in critical iron-dependent steps in cellular proliferation. Newer gallium compounds have emerged with additional mechanisms of action. In clinical trials, the first-generation-compound gallium nitrate has exhibited activity against bladder cancer and non-Hodgkin's lymphoma, while the thiosemicarbazone Triapine® has demonstrated activity against other tumors. Critical Issues: Novel gallium compounds with greater cytotoxicity and a broader spectrum of antineoplastic activity than gallium nitrate should continue to be developed. Future Directions: The antineoplastic activity and toxicity of the existing novel gallium compounds and thiosemicarbazone-metal complexes should be tested in animal tumor models and advanced to Phase I and II clinical trials. Future research should identify biologic markers that predict tumor sensitivity to gallium compounds. This will help direct gallium-based therapy to cancer patients who are most likely to benefit from it. Antioxid. Redox Signal. 00, 000–000. PMID:22900955

  19. Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Chiamori, Heather C.; Miller, Ruth; Suria, Ateeq; Broad, Nicholas; Senesky, Debbie G.

    2015-05-01

    Ultraviolet (UV) photodetectors are used for applications such as flame detection, space navigation, biomedical and environmental monitoring. Robust operation within large ranges of temperatures, radiation, salinity and/or corrosive chemicals require sensor materials with the ability to withstand and function reliably within these extreme harsh environments. For example, spacecraft can utilize a sun sensor (light-based sensor) to assist with determination of orientation and may be exposed to both ionizing radiation and extreme temperature swings during operation. Gallium nitride (GaN), a wide bandgap semiconductor material, has material properties enabling visible-blindness, tunable cutoff wavelength selection based on ternary alloy mole fraction, high current density, thermal/chemical stability and high radiation tolerance due to the strength of the chemical bond. Graphene, with outstanding electrical, optical and mechanical properties and a flat absorption spectrum from 300 to 2,500 nm, has potential use as a transparent conductor for GaN-based metal-semiconductor-metal (MSM) photodetectors. Here, graphene-enhanced MSM UV photodetectors are fabricated with transparent and conductive graphene interdigitated electrodes on thin film GaN-on-sapphire substrates serving as back-to-back Schottky contacts. We report on the irradiation response of graphene/GaN-based MSM UV photodetectors up to 750 krad total ionizing dose (TID) then tested under dark and UV light (365 nm) conditions. In addition, based on current-voltage measurements from 75 krad to 750 krad TID, calculated photodetector responsivity values change slightly by 25% and 11% at -5 V and -2 V, respectively. These initial findings suggest that graphene/GaN MSM UV photodetectors could potentially be engineered to reliably operate within radiation environments.

  20. Direct electron beam writing of gallium oxide on GaAs(111) As surfaces

    NASA Astrophysics Data System (ADS)

    Alonso, M.; Sacedón, J. L.; Soria, F.

    1984-07-01

    In this letter we show the possibility of a direct electron beam writing on GaAs (111) As by electron stimulated oxidation. An estimate of the writing velocity is also given. The analysis of the profiles of the oxide spots by Auger spectroscopy indicates the stability of the gallium oxide formed, and the post-oxidation formation of an As-rich interface.

  1. Gallium and Functionalized-Porphyrins Combine to Form Potential Lysosome-Specific Multimodal Bioprobes.

    PubMed

    Pan, Jie; Harriss, Bethany I; Chan, Chi-Fai; Jiang, Lijun; Tsoi, Tik-Hung; Long, Nicholas J; Wong, Wing-Tak; Wong, Wai-Kwok; Wong, Ka-Leung

    2016-07-18

    A water-soluble bimetallic normal ("cold") and radiochemical ("hot") gallium-porphyrin-ruthenium-bipyridine complex (GaporRu-1) has been synthesized by microwave methodology in short reaction times with good (>85%) yields. (68)GaporRu-1 is demonstrated to be a potential multimodal and functional bioprobe for positron emission tomography (PET), lysosome specific optical imaging, and photodynamic therapy. PMID:27355871

  2. Gallium nitrate inhibits calcium resorption from bone and is effective treatment for cancer-related hypercalcemia.

    PubMed Central

    Warrell, R P; Bockman, R S; Coonley, C J; Isaacs, M; Staszewski, H

    1984-01-01

    Approximately two-thirds of patients who receive the anticancer drug gallium nitrate develop mild hypocalcemia. To evaluate the mechanism of drug-induced hypocalcemia, we tested the effects of gallium nitrate upon in vitro release of 45Ca++ from explanted fetal rat bones. The drug significantly inhibited 45Ca++ release in response to stimulation with both parathyroid hormone and a lymphokine preparation with osteoclast activating factor activity. The inhibitory effects on bone resorption were both time- and dose-dependent. Later, in a pilot study, we treated 10 patients who had cancer-related hypercalcemia with gallium nitrate administered by continuous infusion. All patients responded by a reduction of total serum calcium to normal or subnormal concentrations (13.8 +/- 1.05 mg/dl, mean +/- SD pretreatment, to 8.03 +/- 1.03 mg/dl, mean posttreatment nadir). Our results indicate that gallium nitrate effectively treats cancer-related hypercalcemia and that it probably acts by inhibiting calcium release from bone. Images PMID:6715548

  3. Bilateral Comparison of Mercury and Gallium Fixed-Point Cells Using Standard Platinum Resistance Thermometer

    NASA Astrophysics Data System (ADS)

    Bojkovski, J.; Veliki, T.; Zvizdić, D.; Drnovšek, J.

    2011-08-01

    The objective of project EURAMET 1127 (Bilateral comparison of triple point of mercury and melting point of gallium) in the field of thermometry is to compare realization of a triple point of mercury (-38.8344 °C) and melting point of gallium (29.7646 °C) between the Slovenian national laboratory MIRS/UL-FE/LMK and the Croatian national laboratory HMI/FSB-LPM using a long-stem 25 Ω standard platinum resistance thermometer (SPRT). MIRS/UL/FE-LMK participated in a number of intercomparisons on the level of EURAMET. On the other hand, the HMI/LPM-FSB laboratory recently acquired new fixed-point cells which had to be evaluated in the process of intercomparisons. A quartz-sheathed SPRT has been selected and calibrated at HMI/LPM-FSB at the triple point of mercury, the melting point of gallium, and the water triple point. A second set of measurements was made at MIRS/UL/FE-LMK. After its return, the SPRT was again recalibrated at HMI/LPM-FSB. In the comparison, the W value of the SPRT has been used. Results of the bilateral intercomparison confirmed that the new gallium cell of the HMI/LPM-FSB has a value that is within uncertainty limits of both laboratories that participated in the exercise, while the mercury cell experienced problems. After further research, a small leakage in the mercury fixed-point cell has been found.

  4. Infected cyst localization with gallium SPECT imaging in polycystic kidney disease

    SciTech Connect

    Amesur, P.; Castronuovo, J.J.; Chandramouly, B.

    1988-01-01

    This case report describes a 43-year-old woman with polycystic renal disease and cyst infection. Infected cysts of the left kidney were successfully localized with Ga-67 citrate SPECT imaging and CT. Other imaging, including planar gallium imaging, was helpful diagnostically, but could not determine the exact location of infection within the kidney.

  5. Gallium-67 breast uptake in a patient with hypothalamic granuloma (sarcoid)

    SciTech Connect

    Vazquez, R.; Oates, E.; Sarno, R.C.; Fay, J.; Gale, D.R.

    1988-01-01

    An unusual case is presented of bilateral breast uptake of (/sup 67/Ga)citrate in a patient with a hypothalamic granuloma in the absence of galactorrhea is presented. A possible mechanism for this incidental finding is elevated prolactin levels, as other causes of gallium breast uptake such as drug therapy, and intrinsic breast disease, were not present.

  6. Skylab experiment performance evaluation manual. Appendix J: Experiment M555 gallium arsenide single crystal growth (MSFC)

    NASA Technical Reports Server (NTRS)

    Byers, M. S.

    1973-01-01

    Analyses for Experiment M555, Gallium Arsenide Single Crystal Growth (MSFC), to be used for evaluating the performance of the Skylab corollary experiments under preflight, inflight, and post-flight conditions are presented. Experiment contingency plan workaround procedure and malfunction analyses are presented in order to assist in making the experiment operationally successful.

  7. Structure and optical properties of cubic gallium oxynitride synthesized by solvothermal route

    SciTech Connect

    Oberländer, Andreas; Kinski, Isabel; Zhu, Wenliang; Pezzotti, Giuseppe; Michaelis, Alexander

    2013-04-15

    Cubic gallium oxynitride was synthesized using a solvothermal processing route. Crystal structure, chemical composition, optical properties and the influence of heat treatment in either reactive or inert atmospheres have been investigated. Despite a strongly distorted lattice revealed using X-ray diffraction, the Raman active modes of a cubic gallium oxynitride structure could be observed. With diffusive reflectance UV–Vis spectroscopy a band gap at around 4.8 eV has been observed. Additionally, cathodoluminescence spectroscopy exhibited observable luminescence caused by defect-related transitions within the optical gap. Cathodoluminescence and photoluminescence spectra collected after heat treatments showed significant changes in the defect structure. In particular, for annealing in ammonia the main spectral modifications were related to the substitution of oxygen by nitrogen on anion sites. - Graphical abstract: CL spectra of gallium oxynitride: As-prepared and heat-treated at temperatures of 500 °C in different atmospheres. Highlights: ► Raman spectrum of cubic gallium oxynitride. ► Experimental determination of optical band gap. ► Shift of band gap energy due to heat treatment. ► Nitrogen incorporation leads to deep level acceptor states. ► Red shifted luminescence spectrum.

  8. Influence of various factors on the accuracy of gallium-67 imaging for occult infection

    SciTech Connect

    Maderazo, E.G.; Hickingbotham, N.B.; Woronick, C.L.; Sziklas, J.J.

    1988-05-01

    To examine whether the results and interpretation of gallium-67 citrate imaging may be adversely influenced by factors present in compromised patients, we reviewed our 1-year experience in 69 patients in intensive care units, renal transplants, and those on hemodialysis. Our results indicate that it is an inappropriate diagnostic procedure for acute pancreatitis since seven of nine had false-negative results. Using loglinear modeling and chi-square analysis we found that treatment with antiinflammatory steroids, severe liver disease, end-stage renal disease, and renal transplantation with immunosuppressive therapy did not interfere with gallium-67 uptake. Increased rate of true-negative results in patients with end-stage renal disease was due to a greater and earlier use of the test in the febrile transplant patient and in hemodialysis patients with infections not amenable to diagnosis with gallium-67 scan (transient bacteremia and bacteriuria). We conclude that gallium-67 imaging is a useful diagnostic tool that, with the exception of acute pancreatitis, has very few false-negative results.

  9. NMR microspectroscopy using 100 microns planar RF coils fabricated on gallium arsenide substrates.

    PubMed

    Peck, T L; Magin, R L; Kruse, J; Feng, M

    1994-07-01

    A family of planar gold RF microcoils were fabricated using microlithography on a gallium arsenide substrate. The microcoils were used in 1H nuclear magnetic resonance (NMR) spectroscopy experiments at 300 MHz (7.05 T). These new microcoils are a key component in the design of integrated MR coils and amplifiers for NMR microspectroscopy. PMID:7523278

  10. Case report: gallium study showing a rare form of multiple myeloma

    SciTech Connect

    Meyers, E.; Kasner, J.R.

    1981-12-01

    A case study is presented in which a rare form of multiple myeloma with soft tissue involvememt was diagnosed by a gallium scan using 3 mCi of Ga-67 citrate. Subsequent resting cardiac blood pool images suggested pericardial rather than myocardial involvement. (JMT)

  11. Radiographic and radionuclide imaging in multiple myeloma: the role of gallium scintigraphy: concise communication

    SciTech Connect

    Waxman, A.D.; Siemsen, J.K.; Levine, A.M.; Holdorf, D.; Suzuki, R.; Singer, F.R.; Bateman, J.

    1981-03-01

    Eighteen patients with multiple myeloma were studied using radiographs of the skeletal system, technetium phosphate bone scans, and gallium-67 scintigraphy. A total of 94 sites were used as the basis for comparison in these 18 patients. Radiographic sensitivity on a patient basis was 94%, and was 82% on a site basis. Bone scans were positive in 78% of patients and in 46% of sites. Gallium scans were positive in 56% of patients and in 40% of sites. In five of the 18 patients, gallium scans showed activity in abnormal sites wth a greater lesion-to-nonlesion ratio than did the bone scan. In this subgroup of patients, the disease was fulminant, and all died within 3 mo of their study. The finding of high gallium uptake in osseous sites that are normal or only slightly abnormal on bone scan has served to identify a subgroup of patients with rapidly progressive disease who may benefit from alternative treatment modalities such as radiation therapy.

  12. Electro-optic modulator for infrared laser using gallium arsenide crystal

    NASA Technical Reports Server (NTRS)

    Walsh, T. E.

    1968-01-01

    Gallium arsenide electro-optic modulator used for infrared lasers has a mica quarter-wave plate and two calcite polarizers to amplitude or phase modulate an infrared laser light source in the wavelength range from 1 to 3 microns. The large single crystal has uniformly high resistivities, is strain free, and comparable in quality to good optical glass.

  13. Ductile alloy and process for preparing composite superconducting wire

    DOEpatents

    Verhoeven, J.D.; Finnemore, D.K.; Gibson, E.D.; Ostenson, J.E.

    An alloy for the commercial production of ductile superconducting wire is prepared by melting together copper and at least 15 weight percent niobium under non-oxygen-contaminating conditions, and rapidly cooling the melt to form a ductile composite consisting of discrete, randomly distributed and oriented dendritic-shaped particles of niobium in a copper matrix. As the wire is worked, the dendritic particles are realigned parallel to the longitudinal axis and when drawn form a plurality of very fine ductile superconductors in a ductile copper matrix. The drawn wire may be tin coated and wound into magnets or the like before diffusing the tin into the wire to react with the niobium. Impurities such as aluminum or gallium may be added to improve upper critical field characteristics.

  14. Ductile alloy and process for preparing composite superconducting wire

    DOEpatents

    Verhoeven, John D.; Finnemore, Douglas K.; Gibson, Edwin D.; Ostenson, Jerome E.

    1983-03-29

    An alloy for the commercial production of ductile superconducting wire is prepared by melting together copper and at least 15 weight percent niobium under non-oxygen-contaminating conditions, and rapidly cooling the melt to form a ductile composite consisting of discrete, randomly distributed and orientated dendritic-shaped particles of niobium in a copper matrix. As the wire is worked, the dendritric particles are realigned parallel to the longitudinal axis and when drawn form a plurality of very fine ductile superconductors in a ductile copper matrix. The drawn wire may be tin coated and wound into magnets or the like before diffusing the tin into the wire to react with the niobium. Impurities such as aluminum or gallium may be added to improve upper critical field characteristics.

  15. [Spectrophotometric determination of scandium,gallium and vanadium in white cabbage leaves].

    PubMed

    Buhl, F; Połedniok, J

    1997-01-01

    Scandium, gallium and vanadium contents in plants is on the ppm level, although plants from industrial areas can show higher concentrations of these elements. In Department of Analytical Chemistry of Silesian University there have been elaborated new, sensitive, spectrophotometric methods of determination of scandium, gallium and vanadium using Chrome Azurol S (CAS) and Sterinol (ST). The aim of this study was the application of these methods in analysis of cultivated plants from polluted regions. White cabbage from Upper Silesia was chosen. Because the spectrophotometric methods are not selective, scandium, gallium and vanadium should be preliminary separated from interfering elements. The solvent reaction was applied for the isolation from main and trace components of investigated material. Tienoiltrifluoracetone solution in xylene was used for the extraction of scandium, mesithyloxide for vanadium and n-butyl acetate--for gallium. Interfering and not separated Fe(III) was isolated using the extraction with acetylacetone solution in CHCl3 in the case of scandium and the reduction to Fe(II) by ascorbic acid in the case of gallium and vanadium. Due to influence of Fe(II) on the vanadium determination, KCN was used as a masking agent directly after the reduction. Scandium, gallium and vanadium were determined in 6 independent samples of white cabbage after dry or wet mineralization and contents of these leemnets were found from calibration graphs. Obtain results were checked by the internal standard addition method and Atomic Emission Spectrometry Method (ICP AES). The amounts of gallium and vanadium in white cabbage from Upper Silesia District determined by elaborated methods are in good correlation with a literature data, although the contents of vanadium are on the toxic level. The scandium concentration is higher than in plants from not industrial areas. The standard recovery is satisfactory. The Atomic Emission Spectrometry Method gave comparable results. The

  16. Three cases demonstrating the role of gallium scanning in relapsing Hodgkin's disease and non-Hodgkin lymphoma

    SciTech Connect

    Zollars, L.E.; Nagel, J.S.; Tumeh, S.S.

    1987-10-01

    Restaging of Hodgkin's disease and non-Hodgkin lymphoma for chemotherapy traditionally requires chest radiograph and abdominal computerized tomogram (CT) for routine follow-up examination. Although gallium scanning has had a poor record in the past, recent studies suggest that improved techniques have given this method high sensitivity. We present three cases in which gallium correctly staged lymphoma that had been missed or misinterpreted by chest radiographs and abdominal CT. Gallium imaging is useful in follow-up of lymphoma patients especially when the CT scan is difficult to interpret.

  17. Slow and fast singlet energy transfers in BODIPY-gallium(III)corrole dyads linked by flexible chains.

    PubMed

    Brizet, Bertrand; Desbois, Nicolas; Bonnot, Antoine; Langlois, Adam; Dubois, Adrien; Barbe, Jean-Michel; Gros, Claude P; Goze, Christine; Denat, Franck; Harvey, Pierre D

    2014-04-01

    Red (no styryl), green (monostyryl), and blue (distyryl) BODIPY-gallium(III) (BODIPY = boron-dipyrromethene) corrole dyads have been prepared in high yields using click chemistry, and their photophysical properties are reported. An original and efficient control of the direction of the singlet energy transfers is reported, going either from BODIPY to the gallium-corrole units or from gallium-corroles to BODIPY, depending upon the nature of the substitution on BODIPY. In one case (green), both directions are possible. The mechanism for the energy transfers is interpreted by means of through-space Förster resonance energy transfer (FRET). PMID:24661249

  18. Preconceptual design for separation of plutonium and gallium by ion exchange

    SciTech Connect

    DeMuth, S.F.

    1997-09-30

    The disposition of plutonium from decommissioned nuclear weapons, by incorporation into commercial UO{sub 2}-based nuclear reactor fuel, is a viable means to reduce the potential for theft of excess plutonium. This fuel, which would be a combination of plutonium oxide and uranium oxide, is referred to as a mixed oxide (MOX). Following power generation in commercial reactors with this fuel, the remaining plutonium would become mixed with highly radioactive fission products in a spent fuel assembly. The radioactivity, complex chemical composition, and large size of this spent fuel assembly, would make theft difficult with elaborate chemical processing required for plutonium recovery. In fabricating the MOX fuel, it is important to maintain current commercial fuel purity specifications. While impurities from the weapons plutonium may or may not have a detrimental affect on the fuel fabrication or fuel/cladding performance, certifying the effect as insignificant could be more costly than purification. Two primary concerns have been raised with regard to the gallium impurity: (1) gallium vaporization during fuel sintering may adversely affect the MOX fuel fabrication process, and (2) gallium vaporization during reactor operation may adversely affect the fuel cladding performance. Consequently, processes for the separation of plutonium from gallium are currently being developed and/or designed. In particular, two separation processes are being considered: (1) a developmental, potentially lower cost and lower waste, thermal vaporization process following PuO{sub 2} powder preparation, and (2) an off-the-shelf, potentially higher cost and higher waste, aqueous-based ion exchange (IX) process. While it is planned to use the thermal vaporization process should its development prove successful, IX has been recommended as a backup process. This report presents a preconceptual design with material balances for separation of plutonium from gallium by IX.

  19. Structure and Properties of Epitaxial Dielectrics on gallium nitride

    NASA Astrophysics Data System (ADS)

    Wheeler, Virginia Danielle

    GaN is recognized as a possible material for metal oxide semiconductor field effect transistors (MOSFETs) used in high temperature, high power and high speed electronic applications. However, high gate leakage and low device breakdown voltages limit their use in these applications. The use of high-kappa dielectrics, which have both a high permittivity (ε) and high band gap energy (Eg), can reduce the leakage current density that adversely affects MOS devices. La2O3 and Sc2O 3 are rare earth oxides with a large Eg (6.18 eV and 6.3 eV respectively) and a relatively high ε (27 and 14.1 respectively), which make them good candidates for enhancing MOSFET performance. Epitaxial growth of oxides is a possible approach to reducing leakage current and Fermi level pinning related to a high density of interface states for dielectrics on compound semiconductors. In this work, La2O3 and Sc2O 3 were characterized structurally and electronically as potential epitaxial gate dielectrics for use in GaN based MOSFETs. GaN surface treatments were examined as a means for additional interface passivation and influencing subsequent oxide formation. Potassium persulfate (K2(SO4)2) and potassium hydroxide (KOH) were explored as a way to achieve improved passivation and desired surface termination for GaN films deposited on sapphire substrates by metal organic chemical vapor deposition (MOCVD). X-ray photoelectron spectroscopy (XPS) showed that KOH left a nitrogen-rich interface, while K2(SO 4)2 left a gallium-rich interface, which provides a way to control surface oxide formation. K2(SO4)2 exhibited a shift in the O1s peak indicating the formation of a gallium-rich GaOx at the surface with decreased carbon contaminants. GaO x acts as a passivating layer prior to dielectric deposition, which resulted in an order of magnitude reduction in leakage current, a reduced hysteresis window, and an overall improvement in device performance. Furthermore, K2(SO4)2 resulted in an additional 0.4 eV of

  20. Turbine Blade Alloy

    NASA Technical Reports Server (NTRS)

    MacKay, Rebecca

    2001-01-01

    The High Speed Research Airfoil Alloy Program developed a fourth-generation alloy with up to an +85 F increase in creep rupture capability over current production airfoil alloys. Since improved strength is typically obtained when the limits of microstructural stability are exceeded slightly, it is not surprising that this alloy has a tendency to exhibit microstructural instabilities after high temperature exposures. This presentation will discuss recent results obtained on coated fourth-generation alloys for subsonic turbine blade applications under the NASA Ultra-Efficient Engine Technology (UEET) Program. Progress made in reducing microstructural instabilities in these alloys will be presented. In addition, plans will be presented for advanced alloy development and for computational modeling, which will aid future alloy development efforts.

  1. SUPERCONDUCTING VANADIUM BASE ALLOY

    DOEpatents

    Cleary, H.J.

    1958-10-21

    A new vanadium-base alloy which possesses remarkable superconducting properties is presented. The alloy consists of approximately one atomic percent of palladium, the balance being vanadium. The alloy is stated to be useful in a cryotron in digital computer circuits.

  2. Separation in Binary Alloys

    NASA Technical Reports Server (NTRS)

    Frazier, D. O.; Facemire, B. R.; Kaukler, W. F.; Witherow, W. K.; Fanning, U.

    1986-01-01

    Studies of monotectic alloys and alloy analogs reviewed. Report surveys research on liquid/liquid and solid/liquid separation in binary monotectic alloys. Emphasizes separation processes in low gravity, such as in outer space or in free fall in drop towers. Advances in methods of controlling separation in experiments highlighted.

  3. DELTA PHASE PLUTONIUM ALLOYS

    DOEpatents

    Cramer, E.M.; Ellinger, F.H.; Land. C.C.

    1960-03-22

    Delta-phase plutonium alloys were developed suitable for use as reactor fuels. The alloys consist of from 1 to 4 at.% zinc and the balance plutonium. The alloys have good neutronic, corrosion, and fabrication characteristics snd possess good dimensional characteristics throughout an operating temperature range from 300 to 490 deg C.

  4. PLUTONIUM-THORIUM ALLOYS

    DOEpatents

    Schonfeld, F.W.

    1959-09-15

    New plutonium-base binary alloys useful as liquid reactor fuel are described. The alloys consist of 50 to 98 at.% thorium with the remainder plutonium. The stated advantages of these alloys over unalloyed plutonium for reactor fuel use are easy fabrication, phase stability, and the accompanying advantuge of providing a means for converting Th/sup 232/ into U/sup 233/.

  5. Lymphocytic interstitial pneumonitis: a cause of pulmonary gallium-67 uptake in a child with acquired immunodeficiency syndrome

    SciTech Connect

    Zuckier, L.S.; Ongseng, F.; Goldfarb, C.R.

    1988-05-01

    Lymphocytic interstitial pneumonitis (LIP) is currently recognized as a frequent pediatric manifestation of the acquired immunodeficiency syndrome (AIDS). We report the gallium scan findings in a 3-yr-old girl with this disorder and review its clinical, radiologic, and pathologic features. LIP must be a prime consideration in the differential diagnosis of diffuse pulmonary gallium uptake in pediatric AIDS patients. Further experience will afford greater perspective on the diagnostic role that nuclear medicine will ultimately play in this disease. 49 references.

  6. Thin-film gallium arsenide solar-cell research. Annual project report, March 1, 1980-February 28, 1981

    SciTech Connect

    Chu, S.S.

    1981-03-01

    The optimization of the deposition of gallium arsenide films of 10 ..mu..m thickness or less has been carried out with the objective of obtaining gallium arsenide films with uniform microstructure and good electrical properties. Gallium arsenide films of 10 ..mu..m or less thickness deposited on tungsten/graphite substrates exhibit, in most cases, pronounced shunting effects in large area MOS solar cells due to grain boundaries. The effective passivation of grain boundaries is necessary to produce solar cells with good conversion efficiency. Different grain boundary passivation techniques have been investigated to determine their effectiveness for large area solar cells from the deposited gallium arsenide films. The combination of ruthenium treatment and thermal oxidation has been shown to be the most effective passivation technique for large area MOS solar cells. MOS solar cells have been fabricated from gallium arsenide films of 10 ..mu..m thickness. The gallium arsenide films were treated with ruthenium ion and followed by thermal oxidation. The solar cells are of the configuration TiO/sub 2//Ag(grid contact)/Au/oxide/n-GaAs/n/sup +/-GaAs/W/graphite. MOS solar cells of 9 cm/sup 2/ area with an AM1 efficiency of up to 8.5% have been prepared reproducibly. The fabrication and characterization of thin film gallium arsenide homojunction solar cells have been initiated. The p/sup +/-n junction was formed in-situ by depositing the Zn-doped p/sup +/-layer immediately after the deposition of n/n/sup +/-layers. Without any surface passivation treatment, solar cells of 8 cm/sup 2/ area with an AM1 efficiency of about 7% have been prepared. With proper optimization in the fabrication processes, the conversion efficiency should be greatly improved. Therefore homojunction structure is a promising approach for the fabrication of thin film gallium arsenide solar cells.

  7. 3D structures of liquid-phase GaIn alloy embedded in PDMS with freeze casting.

    PubMed

    Fassler, Andrew; Majidi, Carmel

    2013-11-21

    Liquid phase electronic circuits are created by freeze casting gallium-indium (GaIn) alloys, such as eutectic gallium-indium (EGaIn), and encapsulating these frozen components within an elastomer. These metal alloys are liquid at room temperature, and can be cast using either injection or a vacuum to fill a PDMS mold and placing the mold in a freezer. Once solidified, a GaIn alloy segment can be manipulated, altered, or bonded to other circuit elements. A stretchable circuit can be fabricated by placing frozen components onto an elastomer substrate, which can be either patterned or flat, and sealing with an additional layer of elastomer. Circuits produced in this fashion are soft, stretchable, and can have complex 3D channel geometries. In contrast, current fabrication techniques, including needle injection, mask deposition, and microcontact printing, are limited to 2D planar designs. Additionally, freeze casting fabrication can create closed loops, multi-terminal circuits with branching features, and large area geometries. PMID:24067934

  8. Effects of Organic Chelation on the Behavior of Aluminum Relative to Gallium During Pedogenesis

    NASA Astrophysics Data System (ADS)

    Herz, M. M.; Derry, L. A.

    2003-12-01

    This study of gallium and aluminum behavior in the soil weathering environment provides a first step toward using Ga/Al as a tracer of aluminum dynamics during pedogenesis. Previously, the interpretation of aluminum behavior in soils was confounded by the monoisotopic nature of aluminum and its subsequent lack of a comparative tracer. Like aluminum, gallium is a strongly hydrolyzing group III element. It is included in the same mineral systems as aluminum and the two are believed to have similar chemistries in most natural environments. Aluminum is a highly toxic metal whose removal from mineral matrices is enhanced by acid deposition and chelation by organic ligands. As much as 80% of dissolved aluminum in upper soil horizons can be complexed by organic ligands, most of which are secreted by plant and soil microorganisms to detoxify their surroundings. However, gallium makes comparatively unstable complexes with organic chelators, and is not expected to be carried into solution or leached from the soil profile by them to the same extent as aluminum. The Hawaiian Islands provide a unique opportunity to study the evolution of aluminum and gallium concentrations during soil development along gradients where age or climate varies, but all other soil forming factors are held constant. Ga/Al in older and more intensely weathered soils can be as high as 2.58 (mg/g), whereas the basaltic parent material is almost 10 times lower (0.30 mg/g). The factor driving soil Ga/Al ratios away from those found in parent material may be the strong control that organic chelation exerts over aluminum mobility. The enhancement of aluminum dissolution by organic chelation can be inferred from the decrease in Ga/Al ratios of exchangeable cations along a gradient of increasing rainfall; where wetter, more organic rich sites have Ga/Al ratios 10 to 100 times lower than drier sites where organic chelation is a less important factor in driving aluminum dynamics. Along this same gradient, the

  9. Properties of plutonium and its alloys for use as fast reactor fuels

    NASA Astrophysics Data System (ADS)

    Hecker, Siegfried S.; Stan, Marius

    2008-12-01

    Early interest in metallic plutonium fuels for fast reactors led to much research on plutonium alloy systems including binary solid solutions with the addition of aluminum, gallium, or zirconium and low melting eutectic alloys with iron and nickel or cobalt. There was also interest in ternaries of these elements with plutonium and cerium. The solid solution and eutectic alloys have most unusual properties, including negative thermal expansion in some solid-solution alloys and the highest viscosity known for liquid metals in the Pu-Fe system. Although metallic fuels have many potential advantages over ceramic fuels, the early attempts were unsuccessful because these fuels suffered from high swelling rates during burn up and high smearing densities. The liquid metal fuels experienced excessive corrosion. Subsequent work on higher melting U-Pu-Zr metallic fuels was much more promising. In light of the recent rebirth of interest in fast reactors, we review some of the key properties of the early fuels and discuss the challenges presented by the ternary alloys.

  10. Single-Crystal NiAl-X Alloys Tested for Hot Corrosion

    NASA Technical Reports Server (NTRS)

    Nesbitt, James A.

    1999-01-01

    Single-crystal nickel aluminide (NiAl) has been investigated extensively throughout the last several years as a potential structural material in aero-gas turbine engines. The attractive features of NiAl in comparison to Ni-base superalloys include a higher melting point, lower density, higher thermal conductivity, and excellent oxidation resistance. However, NiAl suffers from a lack of ductility and fracture toughness at low temperatures and a low creep strength at high temperatures. Alloying additions of hafnium (Hf), gallium (Ga), titanium (Ti), and chromium (Cr) have each shown some benefit to the mechanical properties over that of the binary alloy. However, the collective effect of these alloying additions on the environmental resistance of NiAl-X was unclear. Hence, the present study was undertaken to examine the hot corrosion behavior of these alloys. A companion study examined the cyclic oxidation resistance of these alloys. Several single-crystal NiAl-X alloys (where X is Hf, Ti, Cr, or Ga) underwent hot corrosion testing in a Mach 0.3 burner rig at the NASA Lewis Research Center. Samples were tested for up to 300 1-hr cycles at a temperature of 900 C. It was found that increasing the Ti content from 1 to 5 at.% degraded the hot corrosion behavior. This decline in the behavior was reflected in high weight gains and large corrosion mound formation during testing (see the figures). However, the addition of 1 to 2 at.% Cr to alloys containing 4 to 5 at.% Ti appeared to greatly reduce the susceptibility of these alloys to hot corrosion attack and negated the deleterious effect of the increased Ti addition.

  11. High strength alloys

    SciTech Connect

    Maziasz, Phillip James; Shingledecker, John Paul; Santella, Michael Leonard; Schneibel, Joachim Hugo; Sikka, Vinod Kumar; Vinegar, Harold J.; John, Randy Carl; Kim, Dong Sub

    2012-06-05

    High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tublar that is at least partially made from a material containing at least one of the metal alloys.

  12. High strength alloys

    SciTech Connect

    Maziasz, Phillip James; Shingledecker, John Paul; Santella, Michael Leonard; Schneibel, Joachim Hugo; Sikka, Vinod Kumar; Vinegar, Harold J; John, Randy Carl; Kim, Dong Sub

    2010-08-31

    High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tubular that is at least partially made from a material containing at least one of the metal alloys.

  13. Spark alloying of an AL9 alloy by hard alloys

    NASA Astrophysics Data System (ADS)

    Kuptsov, S. G.; Fominykh, M. V.; Mukhinov, D. V.; Magomedova, R. S.; Nikonenko, E. A.

    2015-08-01

    The phase compositions of spark coatings of Kh12M steel with a VT1-0 (titanium) alloy and T15K6 and T30K4 hard alloys are studied. It is shown that the TiC titanium carbide forms in all cases and tungsten carbide decomposes with the formation of tungsten in a coating. These processes are intensified by increasing time, capacitance, and frequency. The surface hardness, the sample weight, and the white layer thickness increase monotonically.

  14. Creep Resistant Zinc Alloy

    SciTech Connect

    Frank E. Goodwin

    2002-12-31

    This report covers the development of Hot Chamber Die Castable Zinc Alloys with High Creep Strengths. This project commenced in 2000, with the primary objective of developing a hot chamber zinc die-casting alloy, capable of satisfactory service at 140 C. The core objectives of the development program were to: (1) fill in missing alloy data areas and develop a more complete empirical model of the influence of alloy composition on creep strength and other selected properties, and (2) based on the results from this model, examine promising alloy composition areas, for further development and for meeting the property combination targets, with the view to designing an optimized alloy composition. The target properties identified by ILZRO for an improved creep resistant zinc die-casting alloy were identified as follows: (1) temperature capability of 1470 C; (2) creep stress of 31 MPa (4500 psi); (3) exposure time of 1000 hours; and (4) maximum creep elongation under these conditions of 1%. The project was broadly divided into three tasks: (1) Task 1--General and Modeling, covering Experimental design of a first batch of alloys, alloy preparation and characterization. (2) Task 2--Refinement and Optimization, covering Experimental design of a second batch of alloys. (3) Task 3--Creep Testing and Technology transfer, covering the finalization of testing and the transfer of technology to the Zinc industry should have at least one improved alloy result from this work.

  15. Weldability of High Alloys

    SciTech Connect

    Maroef, I

    2003-01-22

    The purpose of this study was to investigate the effect of silicon and iron on the weldability of HAYNES HR-160{reg_sign} alloy. HR-I60 alloy is a solid solution strengthened Ni-Co-Cr-Si alloy. The alloy is designed to resist corrosion in sulfidizing and other aggressive high temperature environments. Silicon is added ({approx}2.75%) to promote the formation of a protective oxide scale in environments with low oxygen activity. HR-160 alloy has found applications in waste incinerators, calciners, pulp and paper recovery boilers, coal gasification systems, and fluidized bed combustion systems. HR-160 alloy has been successfully used in a wide range of welded applications. However, the alloy can be susceptible to solidification cracking under conditions of severe restraint. A previous study by DuPont, et al. [1] showed that silicon promoted solidification cracking in the commercial alloy. In earlier work conducted at Haynes, and also from published work by DuPont et al., it was recognized that silicon segregates to the terminal liquid, creating low melting point liquid films on solidification grain boundaries. Solidification cracking has been encountered when using the alloy as a weld overlay on steel, and when joining HR-160 plate in a thickness greater than19 millimeters (0.75 inches) with matching filler metal. The effect of silicon on the weldability of HR-160 alloy has been well documented, but the effect of iron is not well understood. Prior experience at Haynes has indicated that iron may be detrimental to the solidification cracking resistance of the alloy. Iron does not segregate to the terminal solidification product in nickel-base alloys, as does silicon [2], but iron may have an indirect or interactive influence on weldability. A set of alloys covering a range of silicon and iron contents was prepared and characterized to better understand the welding metallurgy of HR-160 alloy.

  16. Osteomyelitis and infarction in sickle cell hemoglobinopathies: differentiation by combined technetium and gallium scintigraphy

    SciTech Connect

    Amundsen, T.R.; Siegel, M.J.; Siegel, B.A.

    1984-12-01

    Clinical records and scintigrams were reviewed of 18 patients with sickle cell hemoglobinophaties who had undergone combined technetium and gallium scintigraphy during 22 separate episodes of suspected osseous infection. The combined scintigrams were correctly interpreted as indicating osteomyelitis in four studies. Of 18 studies in patients with infarction, the combined scintigrams were correctly interpreted in 16 and showed either no local accumulation of Ga-67 or less accumulation than that of Tc-99m MDP at symptomatic sites. In the other two studies, the scintigrams were falsely interpreted as indicating osteomyelitis and showed congruent, increased accumulation of both Tc-99, MDP and Ga-67. This pattern must be considered indeterminate. Overall, the results indicate that the combination of technetium and gallium scintigraphy is an effective means to distinguish osteomyelitis from infarction in patients with sickle cell hemoglobinopathies.

  17. Gallium antimonide texturing for enhanced light extraction from infrared optoelectronics devices

    NASA Astrophysics Data System (ADS)

    Wassweiler, Ella; Toor, Fatima

    2016-06-01

    The use of gallium antimonide (GaSb) is increasing, especially for optoelectronic devices in the infrared wavelengths. It has been demonstrated in gallium nitride (GaN) devices operating at ultraviolet (UV) wavelengths, that surface textures increase the overall device efficiency. In this work, we fabricated eight different surface textures in GaSb to be used in enhancing efficiency in infrared wavelength devices. Through chemical etching with hydrofluoric acid, hydrogen peroxide, and tartaric acid we characterize the types of surface textures formed and the removal rate of entire layers of GaSb. Through optimization of the etching recipes we lower the reflectivity from 35.7% to 1% at 4 μm wavelength for bare and textured GaSb, respectively. In addition, we simulate surface textures using ray optics in finite element method solver software to provide explanation of our experimental findings.

  18. Gallium-67 citrate imaging in head and neck tumors: report of Cooperative Group.

    PubMed

    Teates, C D; Preston, D F; Boyd, C M

    1980-07-01

    This report summarizes the experiences of the Oak Ridge Associated Universities Cooperative Group with the scanning of head and neck cancer using carrier-free gallium-67 citrate. Central nervous system and thyroid tumors and lymphomas were excluded. Fifty-six percent of primary head and neck tumors and their metastases were detected in 65 patients. The detection rates for primary and metastatic lesions were similar. Results of 1306 scans on patients with many types of cancer and suspicion of head and neck involvement indicate that a positive gallium scan was associated with tumor involvement five to nine times as often as no tumor, but a negative scan cannot reliably rule out involvement. In head and neck tumors, both primary and metastatic, lesions over 3 cm in diameter had a significantly higher detection rate than smaller lesions. Previous radiation or surgery did not affect accuracy. PMID:7391834

  19. Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride

    SciTech Connect

    Pak, J.; Lin, W.; Wang, K.; Chinchore, A.; Shi, M.; Ingram, D. C.; Smith, A. R.; Sun, K.; Lucy, J. M.; Hauser, A. J.; Yang, F. Y.

    2010-07-15

    The authors report the growth of iron nitride on zinc-blende gallium nitride using molecular beam epitaxy. First, zinc-blende GaN is grown on a magnesium oxide substrate having (001) orientation; second, an ultrathin layer of FeN is grown on top of the GaN layer. In situ reflection high-energy electron diffraction is used to monitor the surface during growth, and a well-defined epitaxial relationship is observed. Cross-sectional transmission electron microscopy is used to reveal the epitaxial continuity at the gallium nitride-iron nitride interface. Surface morphology of the iron nitride, similar to yet different from that of the GaN substrate, can be described as plateau valley. The FeN chemical stoichiometry is probed using both bulk and surface sensitive methods, and the magnetic properties of the sample are revealed.

  20. High magneto-optical characteristics of Holmium-doped terbium gallium garnet crystal.

    PubMed

    Chen, Zhe; Yang, Lei; Wang, Xiangyong; Yin, Hang

    2016-06-01

    Magneto-optical characteristics of a new magneto-active material, (Tb(1-x)Hox)3Ga5O12 crystal, have been grown by the Czochralski (Cz) method. A high value of the Verdet constant was obtained at room temperature-namely, 214.9 and 77.8  rad·m-1 T-1 for 632.8 and 1064 nm, respectively. The Verdet constant of the Ho-doped terbium gallium garnet crystal at 1064 nm is about 2 times higher than that of terbium gallium garnet crystal. High value of magneto-optical figure-of-merit makes it an attractive next-generation magneto-optics material for high-power Faraday isolators. PMID:27244419

  1. P-doping mechanisms in catalyst-free gallium arsenide nanowires.

    PubMed

    Dufouleur, Joseph; Colombo, Carlo; Garma, Tonko; Ketterer, Bernt; Uccelli, Emanuele; Nicotra, Marco; Fontcuberta i Morral, Anna

    2010-05-12

    Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurements. Along with theoretical considerations, the doping mechanisms have been revealed. Two competing mechanisms have been revealed: dopant incorporation from the side facets and from the gallium droplet. In the latter incorporation path, doping compensation seems to play an important role in the effective dopant concentration. Hole concentrations of at least 2.4 x 10(18) cm(-3) have been achieved, which to our knowledge is the largest p doping range obtained up to date. This work opens the avenue for the use of doped GaAs nanowires in advanced applications and in mesoscopic physics experiments. PMID:20373777

  2. Anomalous Magneto-Optical Behavior of Rare Earth Doped Gallium Nitride

    NASA Astrophysics Data System (ADS)

    Helbers, Andrew; Mitchell, Brandon; Woodward, Nathaniel; Dierolf, Volkmar

    We have observed unusual magneto-optical properties in rare earth doped gallium nitride. Specifically, the reversal of a magnetic field applied parallel to the c-axis produces unexpected, marked differences in luminescence spectra in several of our samples. Notably, relative emission strengths of Zeeman-split lines from the rare earth ions appear to change when the field is reversed. These effects were not observed in rare earth doped lithium niobate and lithium tantalate, which are also hexagonal and polar. Measurements for erbium doped gallium nitride suggest that these asymmetries seem to be linked to the degree of ferromagnetism of the samples. Results are presented showing these differences. The symmetry of the observed effects requires a perturbation of the RE states with a screw like symmetry. We explore whether this may be accomplished by defects such as threading dislocations. The work related to ferroelectric materials was supported by NSF Grant (DMR-1008075).

  3. Gallium-67 citrate localization in osteoclast nuclei of Paget's disease of bone

    SciTech Connect

    Mills, B.G.; Masuoka, L.S.; Graham, C.C. Jr.; Singer, F.R.; Waxman, A.D.

    1988-06-01

    Gallium-67 citrate scintigraphy has been used to indicate the extent of bone involvement in patients with Paget's disease of bone and is an excellent marker in monitoring the effects of specific therapy. Since gallium uptake is dependent on cellular function, autoradiographic techniques can be applied to cells of Paget's lesions to understand better the mechanism of (/sup 67/Ga)citrate uptake. Bone biopsies were obtained from sites of increased uptake using (/sup 67/Ga)citrate scintigraphy in two patients with Paget's disease. In both patients electron microscopic autoradiographs demonstrated a high concentration of silver grains over the nuclei of osteoclasts. The cellular mechanism is unknown but may be related to the known inhibitory effect of calcitonin on osteoclast activity. The association of (/sup 67/Ga)citrate with the nucleus of the osteoclasts is unique and different from tumor cells in which there is a high association of (/sup 67/Ga)citrate with the lysosome fraction within the cytoplasm.

  4. Thermodynamic property evaluation and magnetic refrigeration cycle analysis for gadolinium gallium garnet

    SciTech Connect

    Murphy, R.W.

    1994-12-01

    Based on relevant material property data and previous model formulations, a magnetothermodynamic property map for gadolinium gallium garnet (Gd{sub 3}Ga{sub 5}O{sub 12}) was adapted for refrigeration cycle analysis in the temperature range 4-40 K and the magnetic field range 0-6 T. Employing methods similar to those previously developed for other materials and temperature ranges, assessments of limitations and relative performance were made for Carnot, ideal regenerative, and pseudo-constant field regenerative cycles. It was found that although Carnot cycle limitations on available temperature lift for gadolinium gallium garnet are not as severe as the limitations for materials previously examined, considerable improvement in cooling capacity and temperature lift combinations can be achieved by using regenerative cycles if serious loss mechanisms are avoided.

  5. A New Stainless Steel-Cased Gallium Cell and its Automatic Maintenance Apparatus

    NASA Astrophysics Data System (ADS)

    Li, X.; Davis, D.; Sjogren, A.; Farley, D.; Zhao, M.; Chen, D.

    2003-09-01

    A new stainless steel-cased gallium cell has been developed. The new cell design, including an open cell version, is described. A new cell was compared against a NIST-certified gallium cell, and the difference between them was well within 0.1 mK. Multiple cells of the new design were intercompared with each other, with differences well within 0.1 mK. A new automatic maintenance apparatus has been developed for simplifying the operation. A melting plateau as long as seven days is easy to obtain using the new apparatus. The expanded uncertainty (k=2) was estimated to be about 0.2 mK for the whole system.

  6. Proof-of-Concept Experiments on a Gallium-Based Ignitron for Pulsed Power Applications

    NASA Technical Reports Server (NTRS)

    Ali, H. K.; Hanson, V. S.; Polzin, K. A.; Pearson, J. B.

    2015-01-01

    ignitron designs have used mercury as the liquid metal cathode, owing to its presence as a liquid at room temperatures and a vapor pressure of 10 Pa (75 mtorr) at room temperature. While these are favorable properties, there are obvious environmental and personal safety concerns with the storage, handling, and use of mercury and its compounds. The purpose of the present work was to fabricate and test an ignitron that used as its cathode an alternate liquid metal that was safe to handle and store. To that end, an ignitron test article that used liquid gallium as the cathode material was developed and tested. Gallium is a metal that has a melting temperature of 29.76 C, which is slightly above room temperature, and a boiling point of over 2,300 C at atmospheric pressure. This property makes gallium the element with the largest relative difference between melting and boiling points. Gallium has a limited role in biology, and when ingested, it will be subsequently processed by the body and expelled rather than accumulating to toxic levels. The next section of this Technical Memorandum (TM) provides background information on the development of mercury-based ignitrons, which serves as the starting point for the development of the gallium-based variant. Afterwards, the experimental hardware and setup used in proof-of-concept testing of a basic gallium ignitron are presented. Experimental data, consisting of discharge voltage and current waveforms as well as high-speed imaging of the gallium arc discharge in the gallium ignitron test article, are presented to demonstrate the efficacy of the concept. Discussion of the data and suggestions on improvements for future iterations of the design are presented in the final two sections of this TM.

  7. Novel approach for n-type doping of HVPE gallium nitride with germanium

    NASA Astrophysics Data System (ADS)

    Hofmann, Patrick; Krupinski, Martin; Habel, Frank; Leibiger, Gunnar; Weinert, Berndt; Eichler, Stefan; Mikolajick, Thomas

    2016-09-01

    We present a novel method for germanium doping of gallium nitride by in-situ chlorination of solid germanium during the hydride vapour phase epitaxy (HVPE) process. Solid germanium pieces were placed in the doping line with a hydrogen chloride flow directed over them. We deduce a chlorination reaction taking place at 800 ° C , which leads to germanium chloroform (GeHCl3) or germanium tetrachloride (GeCl4). The reactor shows a germanium rich residue after in-situ chlorination experiments, which can be removed by hydrogen chloride etching. All gallium nitride crystals exhibit n-type conductivity, which shows the validity of the in-situ chlorination of germanium for doping. A complex doping profile is found for each crystal, which was assigned to a combination of localised supply of the dopant and sample rotation during growth and switch-off effects of the HVPE reactor.

  8. Chronic osteomyelitis: bone and gallium scan patterns associated with active disease

    SciTech Connect

    Tumeh, S.S.; Aliabadi, P.; Weissman, B.N.; McNeil, B.J.

    1986-03-01

    Bone and gallium scans are used to assess osteomyelitis patients with prior bone disease. To refine the criteria for interpreting these scans, the data from 136 consecutive patients with clinically suspected osteomyelitis were reviewed. Active osteomyelitis was diagnosed with surgery or biopsy and culture in 49 patients, excluded with the same criteria in 16, and excluded by clinical follow-up for at least 6 months in 71. Five different scintigraphic patterns were found. The true-positive and false-positive ratios, the likelihood ratios, and posterior probabilities for active osteomyelitis in each pattern were calculated. Only one pattern (gallium uptake exceeding bone-seeking radiopharmaceutical uptake) was indicative of active disease. Other patterns slightly raised or decreased the probability of disease. The extent of these changes varies directly with the prior probability of disease, determined from patient-specific factors (e.g., clinical data, laboratory data, findings on plain films) known best by the referring clinician.

  9. Direct growth of graphene on gallium nitride using C2H2 as carbon source

    NASA Astrophysics Data System (ADS)

    Wang, Bing; Zhao, Yun; Yi, Xiao-Yan; Wang, Guo-Hong; Liu, Zhi-Qiang; Duan, Rui-Rei; Huang, Peng; Wang, Jun-Xi; Li, Jin-Min

    2016-04-01

    Growing graphene on gallium nitride (GaN) at temperatures greater than 900°C is a challenge that must be overcome to obtain high quality of GaN epi-layers. We successfully met this challenge using C2H2 as the carbon source. We demonstrated that graphene can be grown both on copper and directly on GaN epi-layers. The Raman spectra indicated that the graphene films were about 4-5 layers thick. Meanwhile, the effects of the growth temperature on the growth of the graphene films were systematically studied, and 830°C was found to be the optimum growth temperature. We successfully grew high-quality graphene films directly on gallium nitride.

  10. Correlation of contrast angiography and histologic pattern with gallium uptake in primary liver-cell carcinoma: noncorrelation with alpha-feto protein. Concise communication

    SciTech Connect

    Waxman, A.D.; Richmond, R.; Juttner, H.; Siemsen, J.K.; Heffelinger, M.J.; Fink, E.

    1980-04-01

    Seventeen patients with histologically proven primary liver-cell carcinoma were evaluated by a technetium-99m sulfur colloid liver scan as well as the gallium-67 citrate. Twelve of the 17 patients (71%) showed gallium uptake in the tumor. Eleven of the 12 patients (92%) with a moderately or well-differentiated tumor showed increased gallium activity in the abnormality seen on the sulfur colloid scan. The exception in this group was a tumor with a large central area of necrosis. Four of five patients with a poorly differentiated or atypical carcinoma showed absence of gallium activity. Only six of 11 patients with a hypervascular tumor showed a marked increase in gallium uptake. Correlation of gallium with alpha-feto protein, and with hepatitis antigen A, was poor. We conclude that gallium uptake in primary liver-cell carcinoma will be significant when the tumor shows a moderately to well-differentiated histologic pattern, unless significant necrosis is present. If the blood supply is markedly impaired, gallium uptake is reduced. However, a hypervascular blood supply does not necessarily ensure increased gallium avidity.

  11. Investigation of spin transport and accumulation in aluminum gallium arsenide

    NASA Astrophysics Data System (ADS)

    Misuraca, Jennifer

    This dissertation describes spin injection, transport, and detection experiments from Fe electrodes into a bulk AlGaAs channel. This semiconducting alloy is one of a class of persistent photoconductors, chosen as the spin transport medium because its carrier density can be tuned in a controlled manner via photoexcitation through the metal to insulator transition (MIT) in situ. This allows one to determine the dependence of spin lifetime on a variety of external parameters including carrier density, all on one sample. This research represents the first electrical spin-dependent measurements in this material and describes the dependence of the Hanle signal size and spin lifetime on bias, temperature, and carrier density. The photoexcitation needed to change the carrier density in this material comes from an infrared light-emitting diode (IR LED). The first step of this project was to characterize the new, highly Si doped Al0.3Ga 0.7As heterostructures, in order to determine how the illumination of the sample will affect the parameters of the material. To complete this study, Hall crosses were fabricated from the AlGaAs material and the transport properties were measured between 350 mK and 165 K. The resistivity, carrier density, and mobility were determined as a function of temperature for a variety of different illumination times. From this data, the MIT, scattering mechanisms, and the shape of the band tail of the density of states (DOS) were investigated. In fact, this is the first work to electrically probe the DOS in AlGaAs. Once the materials were characterized, they were used to fabricate lateral spin transport devices. Spin transport and accumulation were studied in detail via Hanle effect measurements, which measure the dephasing of electron spins in a perpendicular magnetic field. From these measurements, the spin lifetime of the material can be calculated, and is in the nanosecond range for all measured carrier densities. The spin lifetimes are measured

  12. An advanced space photovoltaic concentrator array using Fresnel lenses, gallium arsenide cells, and prismatic cell covers

    NASA Technical Reports Server (NTRS)

    O'Neill, Mark J.; Piszczor, Michael F.

    1988-01-01

    The current status of a space concentrator array which uses refractive optics, gallium arsenide cells, and prismatic cell covers to achieve excellent performance at a very low array mass is documented. The prismatically covered cells have established records for space cell performance (24.2 percent efficient at 100 AM0 suns and 25 C) and terrestrial single-junction cell performance (29.3 percent efficient at 200 AM1.5 suns and 25 C).

  13. Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

    1994-01-01

    Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

  14. In vitro and in vivo antimicrobial activities of gallium nitrate against multidrug-resistant Acinetobacter baumannii.

    PubMed

    Antunes, Luísa C S; Imperi, Francesco; Minandri, Fabrizia; Visca, Paolo

    2012-11-01

    Multidrug-resistant Acinetobacter baumannii poses a tremendous challenge to traditional antibiotic therapy. Due to the crucial role of iron in bacterial physiology and pathogenicity, we investigated iron metabolism as a possible target for anti-A. baumannii chemotherapy using gallium as an iron mimetic. Due to chemical similarity, gallium competes with iron for binding to several redox enzymes, thereby interfering with a number of essential biological reactions. We found that Ga(NO(3))(3), the active component of an FDA-approved drug (Ganite), inhibits the growth of a collection of 58 A. baumannii strains in both chemically defined medium and human serum, at concentrations ranging from 2 to 80 μM and from 4 to 64 μM, respectively. Ga(NO(3))(3) delayed the entry of A. baumannii into the exponential phase and drastically reduced bacterial growth rates. Ga(NO(3))(3) activity was strongly dependent on iron availability in the culture medium, though the mechanism of growth inhibition was independent of dysregulation of gene expression controlled by the ferric uptake regulator Fur. Ga(NO(3))(3) also protected Galleria mellonella larvae from lethal A. baumannii infection, with survival rates of ≥75%. At therapeutic concentrations for humans (28 μM plasma levels), Ga(NO(3))(3) inhibited the growth in human serum of 76% of the multidrug-resistant A. baumannii isolates tested by ≥90%, raising expectations on the therapeutic potential of gallium for the treatment of A. baumannii bloodstream infections. Ga(NO(3))(3) also showed strong synergism with colistin, suggesting that a colistin-gallium combination holds promise as a last-resort therapy for infections caused by pan-resistant A. baumannii. PMID:22964249

  15. Tetrahedral site ordering in synthetic gallium albite: A 29Si MAS NMR study

    NASA Astrophysics Data System (ADS)

    Sherriff, Barbara L.; Fleet, Michael E.; Burns, Peter C.

    1991-09-01

    The ordering of Si in the tetrahedral sites of gallium albite (NaGaSi 3O 8) has been studied by MAS NMR and Rietveld structure refinement of X-ray powder diffraction data. Low structural state (ordered) material was annealed at about 800°C under a load pressure of 1 kbar, and by Rietveld refinement has tetrahedral-site occupancies for Si of T1O = 0.24(3), T1m = 0.89(2), T2O = 0.98(2), and T2m = 0.89(2), respectively. Corresponding Si occupancies for high structural state (disordered) material are 0.71(2), 0.78(1), 0.76(2), and 0.74(2), respectively. The 29Si MAS NMR spectra of low gallium albite is equivalent to the three-peak spectrum of natural (Amelia) albite, with resonances at -89.6, -96.4, and -104.2 ppm but with relative peak areas of 0.79:1.0:0.77. The tetrahedral-site occupancies derived from the MAS NMR spectrum are in good agreement with those obtained by Rietveld refinement and, in particular, indicate that the -96.4 ppm peak must correspond to Si in T2O. This is the first independent assignment of the 29Si peak at -96 ppm in the spectrum of ordered albite to the T2O site. A peak at -96 ppm is also resolved in the spectrum of high gallium albite. The systematic differences in peak position between the 29Si MAS NMR spectra of low gallium albite and those of Amelia albite cannot be explained simply by the direct replacement of Al by Ga, without a change in angle at the bridging oxygen atoms.

  16. Contribution of gallium experiments to the understanding of solar physics and neutrino physics

    SciTech Connect

    Gavrin, V. N.

    2013-10-15

    The results of gallium measurements of solar neutrino and measurements with artificial sources of neutrinos are presented. Conclusions are drawn from these results, and the potential of the SAGE experiment for studying transitions of active neutrinos to sterile states for {Delta}m{sup 2} > 0.5 eV{sup 2} and a sensitivity of a few percent to the disappearance of electron neutrinos is examined.

  17. The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

    NASA Technical Reports Server (NTRS)

    Patterson, Richard L.; Hammoud, Ahmad

    2012-01-01

    Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

  18. Interaction of vector solitons and beam break up at thin film gallium-silica waveguide structure

    NASA Astrophysics Data System (ADS)

    Sharma, Arvind; Nagar, A. K.

    2016-05-01

    We investigate the interaction of optical vector soliton with a symmetric thin-film gallium-silica waveguide structure using the equivalent particle theory. The relevant nonlinear Schrodinger equation has been solved by the method of phase plane analysis. The analysis shows beam break up into transmitted, reflected and nonlinear surface waves at the interface. The stability properties of the solitons so formed have been discussed.

  19. Gallium scintigraphy demonstration of an appendiceal mucocele: a proposed mechanism of uptake

    SciTech Connect

    Alpert, L.; Friedman, R.

    1981-08-01

    An appendiceal mucocele demonstrated intense early avidity for Ga-67, despite the lack of inflammatory cells to account for the uptake. It is proposed that the acid mucopolysaccharide component of the mucus within the lumen and lining cells accounted for the uptake of the gallium ion, in a similar manner to the uptake of its analogue, the ferric ion, as demonstrated by intense staining of mucus by the colloidal iron technique.

  20. Low valent and hydride complexes of NHC coordinated gallium and indium.

    PubMed

    Ball, Graham E; Cole, Marcus L; McKay, Alasdair I

    2012-01-21

    The reactions of the N-heterocyclic carbene 1,3-dimesitylimidazol-2-ylidene (IMes) with Ga[GaCl(4)], "GaI", InCl(2) and GaBr(3) have been examined. All reactions using a low valent gallium or indium starting material led to species of the form [{MX(2)(IMes)}(2)], where M = Ga, X = Cl (1), I (2); M = In, X = Cl (3), with disproportionation and loss of gallium metal in the case of 2. Reaction of IMes with gallium tribromide yields the air and moisture stable complex [GaBr(3)(IMes)] (4), which has been used as a precursor to the mixed bromohydrides [GaBrH(2)(IMes)] (5) and [GaBr(2)H(IMes)] (6) by (i) ligand redistribution with [GaH(3)(IMes)], (ii) hydride-bromide exchange with triethylsilane, and (iii) alkylation with (n)butyllithium followed by β-hydride elimination (6 only). Attempts to prepare 1, or monovalent analogues such as [{GaCl(IMes)}(n)], by thermally induced reductive elimination of dihydrogen from the chlorohydride congeners of 5 and 6 resulted in isolation of the known compounds [IMesCl][Cl] (IMesCl = 1,3-dimesityl-2-chloroimidazolium), and/or 1,3-dimesityl-2-dihydroimidazole, and gallium metal. Preliminary photochemical NMR spectroscopy and catalytic studies of 5 and 6 aimed at reductive dehydrogenation under milder conditions are reported. Compounds 1 and 4 have been characterised by single crystal X-ray structure determination. PMID:22080333

  1. Optical absorption of Ni2+ and Ni3+ ions in gadolinium gallium garnet epitaxial films

    NASA Astrophysics Data System (ADS)

    Vasileva, N. V.; Gerus, P. A.; Sokolov, V. O.; Plotnichenko, V. G.

    2012-12-01

    Single-crystal Ni-doped gadolinium gallium garnet films were grown for the first time from supercooled Bi2O3-B2O3-based melt solutions by liquid-phase epitaxy. Optical absorption bands due to Ni2+, Ni3+ and Bi3+ ions were observed in those films. Interpretation and tabulation of all absorption bands of nickel ions occupying octahedral and tetrahedral sites in the garnet lattice are presented.

  2. Ventricular patch endocarditis caused by Propionibacterium acnes: advantages of gallium scanning.

    PubMed

    Vandenbos, F; Roger, P M; Mondain-Miton, V; Dunais, B; Fouché, R; Kreitmann, P; Carles, D; Migneco, O; Dellamonica, P

    2001-11-01

    Propionibacterium acnes is a weakly pathogenic commensal of the skin. When isolated from blood cultures it is often considered a contaminant. However, P. acnes may be responsible for severe infections and its role in certain cases of infectious endocarditis has now been definitely established.(1) We report a case of endocarditis due to P. acnes stemming from a ventricular patch and revealed by a gallium 67 scan. PMID:11869063

  3. Altered biodistribution of gallium-67 in a patient with aluminum toxicity treated with desferoxamine

    SciTech Connect

    Brown, S.J.; Slizofski, W.J.; Dadparvar, S. )

    1990-01-01

    Markedly altered biodistribution of ({sup 67}Ga)citrate was observed in a 66-yr-old hemodialysis patient imaged at 48 hr postinjection. A review of the patient's hospital records revealed toxic serum levels of aluminum, treated with the chelating agent desferoxamine. Based on what is known about the biologic interactions between gallium, aluminum, transferrin, and desferoxamine, we believe that both toxic serum aluminum levels and desferoxamine therapy may cause altered biodistribution on ({sup 67}Ga)citrate scintigraphy.

  4. Morphology control of layer-structured gallium selenide nanowires.

    PubMed

    Peng, Hailin; Meister, Stefan; Chan, Candace K; Zhang, Xiao Feng; Cui, Yi

    2007-01-01

    Layer-structured group III chalcogenides have highly anisotropic properties and are attractive materials for stable photocathodes and battery electrodes. We report the controlled synthesis and characterization of layer-structured GaSe nanowires via a catalyst-assisted vapor-liquid-solid (VLS) growth mechanism during GaSe powder evaporation. GaSe nanowires consist of Se-Ga-Ga-Se layers stacked together via van der Waals interactions to form belt-shaped nanowires with a growth direction along the [11-20], width along the [1-100], and height along the [0001] direction. Nanobelts exhibit a variety of morphologies including straight, zigzag, and saw-tooth shapes. These morphologies are realized by controlling the growth temperature and time so that the actual catalysts have a chemical composition of Au, Au-Ga alloy, or Ga. The participation of Ga in the VLS catalyst is important for achieving different morphologies of GaSe. In addition, GaSe nanotubes are also prepared by a slow growth process. PMID:17212464

  5. Ingestion of gallium phosphide nanowires has no adverse effect on Drosophila tissue function

    NASA Astrophysics Data System (ADS)

    Adolfsson, Karl; Schneider, Martina; Hammarin, Greger; Häcker, Udo; Prinz, Christelle N.

    2013-07-01

    Engineered nanoparticles have been under increasing scrutiny in recent years. High aspect ratio nanoparticles such as carbon nanotubes and nanowires have raised safety concerns due to their geometrical similarity to asbestos fibers. III-V epitaxial semiconductor nanowires are expected to be utilized in devices such as LEDs and solar cells and will thus be available to the public. In addition, clean-room staff fabricating and characterizing the nanowires are at risk of exposure, emphasizing the importance of investigating their possible toxicity. Here we investigated the effects of gallium phosphide nanowires on the fruit fly Drosophila melanogaster. Drosophila larvae and/or adults were exposed to gallium phosphide nanowires by ingestion with food. The toxicity and tissue interaction of the nanowires was evaluated by investigating tissue distribution, activation of immune response, genome-wide gene expression, life span, fecundity and somatic mutation rates. Our results show that gallium phosphide nanowires applied through the diet are not taken up into Drosophila tissues, do not elicit a measurable immune response or changes in genome-wide gene expression and do not significantly affect life span or somatic mutation rate.

  6. Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

    NASA Technical Reports Server (NTRS)

    Francis, R. W.; Betz, F. E.

    1985-01-01

    The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

  7. Study of Magnetorotational Instability and MHD Surface Waves in Liquid Gallium

    NASA Astrophysics Data System (ADS)

    Ji, H.; Chen, F.; Kageyama, A.; Goodman, J.; Shoshan, E.; Rappaport, H.; Borg, M.; Halcrow, J.

    2002-11-01

    Two liquid gallium experiments have been constructed in PPPL to study basic MHD physics related to astrophysics and fusion sciences. The first experiment focuses on laboratory studies of the magnetorotational instability (MRI) in a rotating gallium disk or a short Couette flow geometry. The MRI has been proposed as a dominant mechanism for fast angular momentum transport in electrically-conducting accretion disks ranging from quasars and X-ray binaries to cataclysmic variables and perhaps even protoplanetary disks. Experiments using a prototype water disk has revealed importance of Ekman circulation, consistent with 2D hydrodynamic simulations. A revised design using multiple rings at each end of the flow are being implemented. The second experiment focuses on MHD surface waves in a large liquid gallium pool. It has been found that the damping rates of driven 1D surface waves propogating along a magnetic field are consistent with linear theory. The parametric excitation of 2D surface waves is being studied to elucidate effects of a horizonally imposed magnetic field on the dynamics of pattern formation. Detailed results will be presented for both experiments and implications to astrophysics and to the liquid metal wall concept in fusion reactors will be discussed. This work is supported by DoE.

  8. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

    SciTech Connect

    Kerr, A. J.; Chagarov, E.; Kaufman-Osborn, T.; Kummel, A. C.; Gu, S.; Wu, J.; Asbeck, P. M.; Madisetti, S.; Oktyabrsky, S.

    2014-09-14

    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al{sub 2}O{sub 3} gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001)

  9. Discriminating a deep gallium antisite defect from shallow acceptors in GaAs using supercell calculations

    NASA Astrophysics Data System (ADS)

    Schultz, Peter A.

    2016-03-01

    For the purposes of making reliable first-principles predictions of defect energies in semiconductors, it is crucial to distinguish between effective-mass-like defects, which cannot be treated accurately with existing supercell methods, and deep defects, for which density functional theory calculations can yield reliable predictions of defect energy levels. The gallium antisite defect GaA s is often associated with the 78/203 meV shallow double acceptor in Ga-rich gallium arsenide. Within a conceptual framework of level patterns, analyses of structure and spin stabilization can be used within a supercell approach to distinguish localized deep defect states from shallow acceptors such as BA s. This systematic approach determines that the gallium antisite supercell results has signatures inconsistent with an effective mass state and cannot be the 78/203 shallow double acceptor. The properties of the Ga antisite in GaAs are described, total energy calculations that explicitly map onto asymptotic discrete localized bulk states predict that the Ga antisite is a deep double acceptor and has at least one deep donor state.

  10. Discriminating a deep gallium antisite defect from shallow acceptors in GaAs using supercell calculations

    DOE PAGESBeta

    Schultz, Peter A.

    2016-03-01

    For the purposes of making reliable first-principles predictions of defect energies in semiconductors, it is crucial to distinguish between effective-mass-like defects, which cannot be treated accurately with existing supercell methods, and deep defects, for which density functional theory calculations can yield reliable predictions of defect energy levels. The gallium antisite defect GaAs is often associated with the 78/203 meV shallow double acceptor in Ga-rich gallium arsenide. Within a conceptual framework of level patterns, analyses of structure and spin stabilization can be used within a supercell approach to distinguish localized deep defect states from shallow acceptors such as BAs. This systematicmore » approach determines that the gallium antisite supercell results has signatures inconsistent with an effective mass state and cannot be the 78/203 shallow double acceptor. Lastly, the properties of the Ga antisite in GaAs are described, total energy calculations that explicitly map onto asymptotic discrete localized bulk states predict that the Ga antisite is a deep double acceptor and has at least one deep donor state.« less

  11. Gallium maltolate inhibits human cutaneous T-cell lymphoma tumor development in mice.

    PubMed

    Wu, Xuesong; Wang, Timothy W; Lessmann, George M; Saleh, Jamal; Liu, Xiping; Chitambar, Christopher R; Hwang, Sam T

    2015-03-01

    Cutaneous T-cell lymphomas (CTCLs) represent a heterogeneous group of non-Hodgkin's lymphoma characterized by an accumulation of malignant CD4 T cells in the skin. The group IIIa metal salt, gallium nitrate, is known to have antineoplastic activity against B-cell lymphoma in humans, but its activity in CTCLs has not been elaborated in detail. Herein, we examined the antineoplastic efficacy of a gallium compound, gallium maltolate (GaM), in vitro and in vivo with murine models of CTCLs. GaM inhibited cell growth and induced apoptosis of cultured CTCL cells. In human CTCL xenograft models, peritumoral injection of GaM limited the growth of CTCL cells, shown by fewer tumor formations, smaller tumor sizes, and decreased neovascularization in tumor microenvironment. To identify key signaling pathways that have a role in GaM-mediated reduction of tumor growth, we analyzed inflammatory cytokines, as well as signal transduction pathways in CTCL cells treated by GaM. IFN-γ-induced chemokines and IL-13 were found to be notably increased in GaM-treated CTCL cells. However, immunosuppressive cytokines, such as IL-10, were decreased with GaM treatment. Interestingly, both oxidative stress and p53 pathways were involved in GaM-induced cytotoxicity. These results warrant further investigation of GaM as a therapeutic agent for CTCLs. PMID:25371972

  12. Activity of Gallium Meso- and Protoporphyrin IX against Biofilms of Multidrug-Resistant Acinetobacter baumannii Isolates

    PubMed Central

    Chang, David; Garcia, Rebecca A.; Akers, Kevin S.; Mende, Katrin; Murray, Clinton K.; Wenke, Joseph C.; Sanchez, Carlos J.

    2016-01-01

    Acinetobacter baumannii is a challenging pathogen due to antimicrobial resistance and biofilm development. The role of iron in bacterial physiology has prompted the evaluation of iron-modulation as an antimicrobial strategy. The non-reducible iron analog gallium(III) nitrate, Ga(NO3)3, has been shown to inhibit A. baumannii planktonic growth; however, utilization of heme-iron by clinical isolates has been associated with development of tolerance. These observations prompted the evaluation of iron-heme sources on planktonic and biofilm growth, as well as antimicrobial activities of gallium meso- and protoporphyrin IX (Ga-MPIX and Ga-PPIX), metal heme derivatives against planktonic and biofilm bacteria of multidrug-resistant (MDR) clinical isolates of A. baumannii in vitro. Ga(NO3)3 was moderately effective at reducing planktonic bacteria (64 to 128 µM) with little activity against biofilms (≥512 µM). In contrast, Ga-MPIX and Ga-PPIX were highly active against planktonic bacteria (0.25 to 8 µM). Cytotoxic effects in human fibroblasts were observed following exposure to concentrations exceeding 128 µM of Ga-MPIX and Ga-PPIX. We observed that the gallium metal heme conjugates were more active against planktonic and biofilm bacteria, possibly due to utilization of heme-iron as demonstrated by the enhanced effects on bacterial growth and biofilm formation. PMID:26999163

  13. Gallium-67 imaging in human heart transplantation: correlation with endomyocardial biopsy

    SciTech Connect

    Meneguetti, J.C.; Camargo, E.E.; Soares, J. Jr.; Bellotti, G.; Bocchi, E.; Higuchi, M.L.; Stolff, N.; Hironaka, F.H.; Buchpiguel, C.A.; Pileggi, F.

    1987-05-01

    Endomyocardial biopsy seems to be the most accurate method to use for diagnosis and follow-up of acute rejection of the transplanted heart. This investigation compared a noninvasive procedure, gallium-67 imaging, with endomyocardial biopsy in the detection of acute rejection in heart transplantation. Seven male patients (aged 41 to 54 years) sequentially had 46 gallium-67 scintigrams and 46 endomyocardial biopsies between 1 week and 8 months after transplantation. Both studies were obtained in the same day, 48 hours after the administration of an intravenous injection of gallium-67 citrate. Cardiac uptake was graded as negative, mild, moderate, and marked according to an increasing count ratio with rib and sternal uptakes. Histologic findings were graded as negative, mild acute rejection, moderate acute rejection, severe acute rejection, resolving rejection, and nonspecific reaction. Negative biopsies were not found with moderate uptake, and neither moderate nor severe acute rejection were found with negative scintigrams. Imaging sensitivity was 83% with 17% false negatives and 9% false positives. Of seven studies with moderate uptake, five showed moderate acute rejection, and the patients had specific therapy with a decline in uptake, which correlated with resolving rejection. It is conceivable that in the future this technique may be used as a screening procedure for sequential endomyocardial biopsies in the follow-up of heart transplant patients.

  14. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20 MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin ½ was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystals—ionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and γ-radiation.

  15. Deposition of metallic gallium on re-crystallized ceramic material during focused ion beam milling

    SciTech Connect

    Muñoz-Tabares, J.A.; Reyes-Gasga, J.

    2013-12-15

    We report a new kind of artifact observed in the preparation of a TEM sample of zirconia by FIB, which consists in the deposition of metallic gallium nano-dots on the TEM sample surface. High resolution TEM images showed a microstructure of fine equiaxed grains of ∼ 5 nm, with some of them possessing two particular characteristics: high contrast and well-defined fast Fourier transform. These grains could not be identified as any phase of zirconia but it was possible to identify them as gallium crystals in the zone axis [110]. Based on HRTEM simulations, the possible orientations between zirconia substrate and deposited gallium are discussed in terms of lattice mismatch and oxygen affinity. - Highlights: • We show a new type of artifact induced during preparation of TEM samples by FIB. • Deposition of Ga occurs due to its high affinity for oxygen. • Materials with small grain size (∼ 5 nm) could promote Ga deposition. • Small grain size permits the elastic accommodation of deposited Ga.

  16. Anomalous properties and the liquid-liquid phase transition in gallium.

    PubMed

    Li, Renzhong; Sun, Gang; Xu, Limei

    2016-08-01

    A group of materials including water and silicon exhibit many anomalous behaviors, e.g., density anomaly and diffusivity anomaly (increase upon compression). These materials are hypothesized to have a liquid-liquid phase transition (LLPT) and the critical fluctuation in the vicinity of the liquid-liquid critical point is considered as the origin of different anomalies. Liquid gallium was also reported to have a LLPT, yet whether it shows similar water-like anomalies is not yet studied. Using molecular dynamics simulations on a modified embedded-atom model, we study the thermodynamic, dynamic, and structural properties of liquid gallium as well as its LLPT. We find that, similar to water-like materials predicted to have the LLPT, gallium also shows different anomalous behaviors (e.g., density anomaly, diffusivity anomaly, and structural anomaly). We also find that its thermodynamic and structural response functions are continuous and show maxima in the supercritical region, the loci of which asymptotically approach to the other and merge to the Widom line. These phenomena are consistent with the supercritical phenomenon in a category of materials with a liquid-liquid critical point, which could be common features in most materials with a LLPT. PMID:27497564

  17. Thermal expansion of gallium arsenide layers grown by molecular beam epitaxy at low temperatures

    NASA Astrophysics Data System (ADS)

    Leszczynski, M.; Walker, J. F.

    1993-03-01

    The thermal expansion of low-temperature (190-220 °C) MBE grown gallium arsenide (LT GaAs) was measured using x-ray diffraction methods. The experiment was performed in order to observe the influence of high nonstoichiometric excess (about 1%) of arsenic on the thermal expansion of gallium arsenide. The diffraction measurements enabled the simultaneous monitoring of the lattice constants of the LT GaAs layers and their semi-insulating GaAs substrates. Their lattice mismatch was only slightly temperature dependent and decreased by about 5% with a temperature rise from 77 K (in dark) up to 550 K. This means that the value of the thermal expansion coefficient of as-grown LT GaAs was lower only by about 0.05×10-6 K-1 than that of the semi-insulating GaAs substrate. Reduction of arsenic excess by air annealing at 420 °C resulted in the decrease of lattice mismatch and the difference in the thermal expansion. This means that both are related to such point defects as arsenic antisites and interstitials. The experimental results are compared with the previously published data for variously doped gallium arsenide samples.

  18. Discriminating a deep defect from shallow acceptors in supercell calculations: gallium antisite in GaAs

    NASA Astrophysics Data System (ADS)

    Schultz, Peter

    To make reliable first principles predictions of defect energies in semiconductors, it is crucial to discriminate between effective-mass-like defects--for which existing supercell methods fail--and deep defects--for which density functional theory calculations can yield reliable predictions of defect energy levels. The gallium antisite GaAs is often associated with the 78/203 meV shallow double acceptor in Ga-rich gallium arsenide. Within a framework of level occupation patterns, analyses of structure and spin stabilization can be used within a supercell approach to distinguish localized deep defect states from shallow acceptors such as BAs. This systematic analysis determines that the gallium antisite is inconsistent with a shallow state, and cannot be the 78/203 shallow double acceptor. The properties of the Ga antisite in GaAs are described, predicting that the Ga antisite is a deep double acceptor and has two donor states, one of which might be accidentally shallow. -- Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  19. Anomalous properties and the liquid-liquid phase transition in gallium

    NASA Astrophysics Data System (ADS)

    Li, Renzhong; Sun, Gang; Xu, Limei

    2016-08-01

    A group of materials including water and silicon exhibit many anomalous behaviors, e.g., density anomaly and diffusivity anomaly (increase upon compression). These materials are hypothesized to have a liquid-liquid phase transition (LLPT) and the critical fluctuation in the vicinity of the liquid-liquid critical point is considered as the origin of different anomalies. Liquid gallium was also reported to have a LLPT, yet whether it shows similar water-like anomalies is not yet studied. Using molecular dynamics simulations on a modified embedded-atom model, we study the thermodynamic, dynamic, and structural properties of liquid gallium as well as its LLPT. We find that, similar to water-like materials predicted to have the LLPT, gallium also shows different anomalous behaviors (e.g., density anomaly, diffusivity anomaly, and structural anomaly). We also find that its thermodynamic and structural response functions are continuous and show maxima in the supercritical region, the loci of which asymptotically approach to the other and merge to the Widom line. These phenomena are consistent with the supercritical phenomenon in a category of materials with a liquid-liquid critical point, which could be common features in most materials with a LLPT.

  20. Phase change cells and the verification of gallium as a thermal calibration reference in space

    NASA Astrophysics Data System (ADS)

    Latvikoski, Harri; Bingham, Gail E.; Topham, T. S.; Podolski, Igor

    2015-09-01

    The validation of models of global climate change and accurate measurement of the atmosphere and surface temperatures require that orbital sensors have low drift rates, and are monitored or regularly recalibrated by accepted standards. Phase change materials (PCM), such as those that make up the ITS-90 standard, are the basis for international commerce and have been suggested for monitoring and recalibration of orbital temperature sensors. Space Dynamics Laboratory (SDL) and its partners have been developing miniaturized phase change reference technologies that could be deployed on an orbital blackbody for nearly a decade. A significant part of this effort has been the exploration of the behavior of gallium (Ga) and its eutectics, gallium-tin (GaSn) and gallium-indium (GaIn) in conditions expected to be encountered in this application. In this paper, these behaviors are detailed and an example of a hardware design that could be used as an infrared blackbody calibration monitor is presented. To determine if and how microgravity will affect the behavior of Ga, the authors conducted an experiment on the International Space Station (ISS) and compared the observed phase change temperature with earth-based measurements. This paper also provides a brief description of the experiment hardware, microgravity considerations, and the pre-flight, flight and post-flight data analysis.