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Sample records for gallium zinc oxide

  1. Epitaxial Zinc Oxide Semiconductor Film deposited on Gallium Nitride Substrate

    NASA Astrophysics Data System (ADS)

    McMaster, Michael; Oder, Tom

    2011-04-01

    Zinc oxide (ZnO) is a wide bandgap semiconductor which is very promising for making efficient electronic and optical devices. The goal of this research was to produce high quality ZnO film on gallium nitride (GaN) substrate by optimizing the substrate temperature. The GaN substrates were chemically cleaned and mounted on a ceramic heater and loaded into a vacuum deposition chamber that was pumped down to a base pressure of 3 x 10-7 Torr. The film deposition was preceded by a 30 minute thermal desorption carried in vacuum at 500 ^oC. The ZnO thin film was then sputter-deposited using an O2/Ar gas mixture onto GaN substrates heated at temperatures varying from 20 ^oC to 500 ^oC. Post-deposition annealing was done in a rapid thermal processor at 900 ^oC for 5 min in an ultrapure N2 ambient to improve the crystal quality of the films. The films were then optically characterized using photoluminescence (PL) measurement with a UV laser excitation. Our measurements reveal that ZnO films deposited on GaN substrate held at 200 ^oC gave the best film with the highest luminous intensity, with a peak energy of 3.28 eV and a full width half maximum of 87.4 nm. Results from low temperature (10 K) PL measurements and from x-ray diffraction will also be presented.

  2. Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

    NASA Astrophysics Data System (ADS)

    Kim, Jun Ho; Kim, Da-Som; Kim, Sun-Kyung; Yoo, Young-Zo; Lee, Jeong Hwan; Kim, Sang-Woo; Seong, Tae-Yeon

    2016-08-01

    In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm-3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke's figure of merit (FOM) was calculated to be 1.94 × 10-3 for the ITO film and 45.02 × 10-3 Ω-1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

  3. Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

    NASA Astrophysics Data System (ADS)

    Kim, Jun Ho; Kim, Da-Som; Kim, Sun-Kyung; Yoo, Young-Zo; Lee, Jeong Hwan; Kim, Sang-Woo; Seong, Tae-Yeon

    2016-05-01

    In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm-3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke's figure of merit (FOM) was calculated to be 1.94 × 10-3 for the ITO film and 45.02 × 10-3 Ω-1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

  4. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    SciTech Connect

    Guo, Li Qiang Ding, Jian Ning; Huang, Yu Kai; Zhu, Li Qiang

    2015-08-15

    Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO{sub 2} electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO{sub 2} electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  5. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    NASA Astrophysics Data System (ADS)

    Guo, Li Qiang; Zhu, Li Qiang; Ding, Jian Ning; Huang, Yu Kai

    2015-08-01

    Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO2 electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO2 electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  6. Highly bendable characteristics of amorphous indium-gallium-zinc-oxide transistors embedded in a neutral plane

    NASA Astrophysics Data System (ADS)

    Park, Chang Bum; Na, HyungIl; Yoo, Soon Sung; Park, Kwon-Shik

    2015-11-01

    The electromechanical response of an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) fabricated on a polyimide substrate was investigated as a function of the neutral axis location and strain history of the bending system. Here, we demonstrate the pronounced bending characteristics of a-IGZO TFTs and their backplane under extreme mechanical strain when they are embedded in a neutral plane (NP). After being subjected to tensile stress, the devices positioned near the NP were observed to function well against a cyclic bending stress of 2 mm radius with 100,000 times, while TFTs farther from the neutral surface exhibited modified electrical properties.

  7. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

    SciTech Connect

    Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih; Sze, Simon M.

    2014-04-14

    In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

  8. Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide

    SciTech Connect

    Choi, Seung-Ha; Jung, Woo-Shik; Park, Jin-Hong

    2012-11-19

    In this work, thermal diffusion phenomenon of Ti into amorphous indium gallium zinc oxide ({alpha}-IGZO) was carefully investigated with secondary ion mass spectroscopy, I-V, and R{sub s} measurement systems and HSC chemistry simulation tool. According to the experimental and simulated results, the diffused Ti atoms were easily oxidized due to its lowest oxidation free energy. Since oxygen atoms were decomposed from the {alpha}-IGZO during the oxidation of Ti, the number of oxygen vacancies working as electron-donating sites in {alpha}-IGZO was dramatically increased, contributing to the decrease of resistivity ({rho}) from 1.96 {Omega} cm (as-deposited {alpha}-IGZO) to 1.33 Multiplication-Sign 10{sup -3}{Omega} cm (350 Degree-Sign C annealed {alpha}-IGZO).

  9. Solvothermal synthesis of gallium-doped zinc oxide nanoparticles with tunable infrared absorption

    NASA Astrophysics Data System (ADS)

    Zhou, Haifeng; Wang, Hua; Tian, Xingyou; Zheng, Kang; Xu, Fei; Su, Zheng; Tian, Konghu; li, Qiulong; Fang, Fei

    2014-12-01

    The doping of ZnO nanoparticles (NPs) has been attracting a lot of attention both for fundamental studies and potential applications. In this manuscript, we report the preparation of gallium doped zinc oxide (GZO) NPs through the solvothermal method. In order to obtain the effective Ga doping in the ZnO crystalline lattice, we identified the optimal reaction conditions in terms of different Zn precursors, temperature, and heating rate. The results show that GZO NPs with tunable infrared absorption can be received using different molar ratios of Ga(NO3)3 and zinc stearate (Zn[CH3(CH2)16COO]2, ZnSt2) kept in the sealed autoclaves at 160 °C for 8 h. Furthermore, the growth of the GZO NPs was investigated by monitoring the optical absorption spectral and the corresponding chemical composition of aliquots extracted at different reaction time intervals.

  10. Reduced contact resistance in inkjet printed high-performance amorphous indium gallium zinc oxide transistors.

    PubMed

    Hennek, Jonathan W; Xia, Yu; Everaerts, Ken; Hersam, Mark C; Facchetti, Antonio; Marks, Tobin J

    2012-03-01

    Solution processing of amorphous metal oxide materials to fabricate thin-film transistors (TFTs) has received great recent interest. We demonstrate here an optimized "ink" and printing process for inkjet patterning of amorphous indium gallium zinc oxide (a-IGZO) TFTs and investigate the effects of device structure on derived electron mobility. Bottom-gate top-contact (BGTC) TFTs are fabricated and shown to exhibit electron mobilities comparable to a-Si:H. Furthermore, a record electron mobility of 2.5 cm(2) V(-1) s(-1) is demonstrated for bottom-gate bottom-contact (BGBC) TFTs. The mechanism underlying such impressive performance is investigated using transmission line techniques, and it is shown that the semiconductor-source/drain electrode interface contact resistance is nearly an order of magnitude lower for BGBC transistors versus BGTC devices. PMID:22321212

  11. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    SciTech Connect

    Sallis, S.; Williams, D. S.; Butler, K. T.; Walsh, A.; Quackenbush, N. F.; Junda, M.; Podraza, N. J.; Fischer, D. A.; Woicik, J. C.; White, B. E.; Piper, L. F. J.

    2014-06-09

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  12. Deep Subgap Feature in Amorphous Indium Gallium Zinc Oxide. Evidence Against Reduced Indium

    SciTech Connect

    Sallis, Shawn; Quackenbush, Nicholas F.; Williams, Deborah S.; Senger, Mikell; Woicik, Joseph C.; White, Bruce E.; Piper, Louis F.

    2015-01-14

    Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. In spite of the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. We present evidence against In+ lone pair active electrons as the origin of the deep subgap features. No In+ species are observed, only In0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states.

  13. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    SciTech Connect

    Yang, Seong-Uk; Jung, Woo-Shik; Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho; Park, Jin-Hong

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  14. In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process

    SciTech Connect

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo

    2013-07-01

    The origin of negative ions in the dc magnetron sputtering process using a ceramic indium-gallium-zinc oxide target has been investigated by in situ analyses. The observed negative ions are mainly O{sup -} with energies corresponding to the target voltage, which originates from the target and barely from the reactive gas (O{sub 2}). Dissociation of ZnO{sup -}, GaO{sup -}, ZnO{sub 2}{sup -}, and GaO{sub 2}{sup -} radicals also contributes to the total negative ion flux. Furthermore, we find that some sputtering parameters, such as the type of sputtering gas (Ar or Kr), sputtering power, total gas pressure, and magnetic field strength at the target surface, can be used to control the energy distribution of the O{sup -} ion flux.

  15. Interface location-controlled indium gallium zinc oxide thin-film transistors using a solution process

    NASA Astrophysics Data System (ADS)

    Na, Jae Won; Kim, Yeong-gyu; Jung, Tae Soo; Tak, Young Jun; Park, Sung Pyo; Park, Jeong Woo; Kim, Si Joon; Kim, Hyun Jae

    2016-03-01

    The role of an interface as an electron-trapping layer in double-stacked indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was investigated and interface location-controlled (ILC) IGZO TFTs were introduced. In the ILC TFTs, the thickness of the top and bottom IGZO layers is controlled to change the location of the interface layer. The system exhibited improved electrical characteristics as the location of the interface layer moved further from the gate insulator: field-effect mobility increased from 0.36 to 2.17 cm2 V-1 s-1, and the on-current increased from 2.43  ×  10-5 to 1.33  ×  10-4 A. The enhanced electrical characteristics are attributed to the absence of an electron-trapping interface layer in the effective channel layer where electrons are accumulated under positive gate bias voltage.

  16. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    SciTech Connect

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  17. Thermal Conductivity of Amorphous Indium-Gallium-Zinc Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Toru; Yagi, Takashi; Oka, Nobuto; Jia, Junjun; Yamashita, Yuichiro; Hattori, Koichiro; Seino, Yutaka; Taketoshi, Naoyuki; Baba, Tetsuya; Shigesato, Yuzo

    2013-02-01

    We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In:Ga:Zn= 1:1:0.6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O2 sputtering gas. The carrier density of the films was systematically controlled from 1014 to >1019 cm-3 by varying the O2 flow ratio. Their Hall mobility was slightly higher than 10 cm2·V-1·s-1. Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was ˜5.4×10-7 m2·s-1 and was almost independent of the carrier density. The average thermal conductivity was 1.4 W·m-1·K-1.

  18. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    NASA Astrophysics Data System (ADS)

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-03-01

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as -2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to -15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  19. The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc; McCall, Briana; Alston, Robert; Collis, Ward; Iyer, Shanthi

    2015-10-01

    With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of -3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V-1s-1, and sub-threshold swing of 0.38 V dec-1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

  20. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    SciTech Connect

    Lee, Ching-Ting Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  1. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-01

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance gm change, threshold voltage VT change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  2. Surface Composition, Work Function, and Electrochemical Characteristics of Gallium-Doped Zinc Oxide

    SciTech Connect

    Ratcliff, E. L.; Sigdel, A. K.; Macech, M. R.; Nebesny, K.; Lee, P. A.; Ginley, D. S.; Armstrong, N. R.; Berry, J. J.

    2012-06-30

    Gallium-doped zinc oxide (GZO) possesses the electric conductivity, thermal stability, and earth abundance to be a promising transparent conductive oxide replacement for indium tin oxide electrodes in a number of molecular electronic devices, including organic solar cells and organic light emitting diodes. The surface chemistry of GZO is complex and dominated by the hydrolysis chemistry of ZnO, which influences the work function via charge transfer and band bending caused by adsorbates. A comprehensive characterization of the surface chemical composition and electrochemical properties of GZO electrodes is presented, using both solution and surface adsorbed redox probe molecules. The GZO surface is characterized using monochromatic X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy after the following pretreatments: (i) hydriodic acid etch, (ii) potassium hydroxide etch, (iii) RF oxygen plasma etching, and (iv) high-vacuum argon-ion sputtering. The O 1s spectra for the GZO electrodes have contributions from the stoichiometric oxide lattice, defects within the lattice, hydroxylated species, and carbonaceous impurities, with relative near-surface compositions varying with pretreatment. Solution etching procedures result in an increase of the work function and ionization potential of the GZO electrode, but yield different near surface Zn:Ga atomic ratios, which significantly influence charge transfer rates for a chemisorbed probe molecule. The near surface chemical composition is shown to be the dominant factor in controlling surface work function and significantly influences the rate of electron transfer to both solution and tethered probe molecules.

  3. Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

    NASA Astrophysics Data System (ADS)

    Gupta, S.; Lacour, S. P.

    2016-03-01

    Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditions (37°C, 5% CO2). Here, we report on the reliable performance of parylene encapsulated indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) after prolonged exposure to phosphate buffer saline solution in an incubator. The encapsulated IGZO TFTs (W/L = 500 μm/20 μm) have an ON/OFF current ratio of 107 and field effect mobility of 8.05 ± 0.78 cm2/Vs. The transistors operate within 4 V; their threshold voltages and subthreshold slope are ~1.9 V and 200 mV/decade, respectively. After weeks immersed in saline solution and at 37°C, we did not observe any significant deterioration in the transistors' performance. The long-term stability of IGZO transistors at physiological conditions is a promising result in the direction of metal oxide bioelectronics.

  4. Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

    NASA Astrophysics Data System (ADS)

    Gupta, S.; Lacour, S. P.

    2016-06-01

    Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditions (37°C, 5% CO2). Here, we report on the reliable performance of parylene encapsulated indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) after prolonged exposure to phosphate buffer saline solution in an incubator. The encapsulated IGZO TFTs (W/L = 500 μm/20 μm) have an ON/OFF current ratio of 107 and field effect mobility of 8.05 ± 0.78 cm2/Vs. The transistors operate within 4 V; their threshold voltages and subthreshold slope are ~1.9 V and 200 mV/decade, respectively. After weeks immersed in saline solution and at 37°C, we did not observe any significant deterioration in the transistors' performance. The long-term stability of IGZO transistors at physiological conditions is a promising result in the direction of metal oxide bioelectronics.

  5. Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film

    NASA Astrophysics Data System (ADS)

    Hendrickson, Joshua R.; Vangala, Shivashankar; Nader, Nima; Leedy, Kevin; Guo, Junpeng; Cleary, Justin W.

    2015-11-01

    Near-perfect light absorption in subwavelength trench arrays etched in highly conductive gallium-doped zinc oxide films was experimentally observed in the mid infrared regime. At wavelengths corresponding to the resonant excitation of surface plasmons, up to 99% of impinging light is efficiently trapped and absorbed in the periodic trenches. Scattering cross sectional calculations reveal that each individual trench acts like a vertical split ring resonator with a broad plasmon resonance spectrum. The coupling of these individual plasmon resonators in the grating structure leads to enhanced photon absorption and significant resonant spectral linewidth narrowing. Ellipsometry measurements taken before and after device fabrication result in different permittivity values for the doped zinc oxide material, indicating that localized annealing occurred during the plasma etching process due to surface heating. Simulations, which incorporate a 50 nm annealed region at the zinc oxide surface, are in a good agreement with the experimental results.

  6. Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film

    SciTech Connect

    Hendrickson, Joshua R. Leedy, Kevin; Cleary, Justin W.; Vangala, Shivashankar; Nader, Nima; Guo, Junpeng

    2015-11-09

    Near-perfect light absorption in subwavelength trench arrays etched in highly conductive gallium-doped zinc oxide films was experimentally observed in the mid infrared regime. At wavelengths corresponding to the resonant excitation of surface plasmons, up to 99% of impinging light is efficiently trapped and absorbed in the periodic trenches. Scattering cross sectional calculations reveal that each individual trench acts like a vertical split ring resonator with a broad plasmon resonance spectrum. The coupling of these individual plasmon resonators in the grating structure leads to enhanced photon absorption and significant resonant spectral linewidth narrowing. Ellipsometry measurements taken before and after device fabrication result in different permittivity values for the doped zinc oxide material, indicating that localized annealing occurred during the plasma etching process due to surface heating. Simulations, which incorporate a 50 nm annealed region at the zinc oxide surface, are in a good agreement with the experimental results.

  7. Sol-gel deposition and plasma treatment of intrinsic, aluminum-doped, and gallium-doped zinc oxide thin films as transparent conductive electrodes

    NASA Astrophysics Data System (ADS)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2015-09-01

    Zinc oxide and aluminum/gallium-doped zinc oxide thin films were deposited via sol-gel spin-coating technique. Employing plasma treatment as alternative to post thermal annealing, we found that the morphologies of these thin films have changed and the sheet resistances have been significantly enhanced. These plasma-treated thin films also show very good optical properties, with transmittance above 90% averaged over the visible wavelength range. Our best aluminum/gallium-doped zinc oxide thin films exhibit sheet resistances (Rs) of ~ 200 Ω/sq and ~ 150 Ω/sq, respectively.

  8. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz

    NASA Astrophysics Data System (ADS)

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-07-01

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

  9. Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

    PubMed

    Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

    2015-04-22

    This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants. PMID:25805699

  10. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    SciTech Connect

    Arora, H.; Malinowski, P. E. Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S.; Heremans, P.

    2015-04-06

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm{sup 2} at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C{sub 61}-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10{sup 12} Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO{sub x} as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  11. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz.

    PubMed

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-01-01

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning. PMID:26138510

  12. Low-voltage indium gallium zinc oxide thin film transistors on paper substrates

    NASA Astrophysics Data System (ADS)

    Lim, Wantae; Douglas, E. A.; Norton, D. P.; Pearton, S. J.; Ren, F.; Heo, Young-Woo; Son, S. Y.; Yuh, J. H.

    2010-02-01

    We have fabricated bottom-gate amorphous (α-) indium-gallium-zinc-oxide (InGaZnO4) thin film transistors (TFTs) on both paper and glass substrates at low processing temperature (≤100 °C). As a water and solvent barrier layer, cyclotene (BCB 3022-35 from Dow Chemical) was spin-coated on the entire paper substrate. TFTs on the paper substrates exhibited saturation mobility (μsat) of 1.2 cm2 V-1 s-1, threshold voltage (VTH) of 1.9 V, subthreshold gate-voltage swing (S ) of 0.65 V decade-1, and drain current on-to-off ratio (ION/IOFF) of ˜104. These values were only slightly inferior to those obtained from devices on glass substrates (μsat˜2.1 cm2 V-1 s-1, VTH˜0 V, S ˜0.74 V decade-1, and ION/IOFF=105-106). The uneven surface of the paper sheet led to relatively poor contact resistance between source-drain electrodes and channel layer. The ability to achieve InGaZnO TFTs on cyclotene-coated paper substrates demonstrates the enormous potential for applications such as low-cost and large area electronics.

  13. Device performances of organic light-emitting diodes with indium tin oxide, gallium zinc oxide, and indium zinc tin oxide anodes deposited at room temperature.

    PubMed

    Lee, Changhun; Ko, Yoonduk; Kim, Youngsung

    2013-12-01

    Thin films of Indium tin oxide (ITO), Gallium zinc oxide (GZO), and Indium zinc tin oxide (IZTO) were deposited on glass substrates by pulsed direct current magnetron sputtering at room temperature. The structural, optical, and electrical properties of the films were investigated towards evaluating their applications as flexible anodes. IZTO films exhibited the lowest resistivity (6.3 x 10(-4) Omega cm). Organic light-emitting diodes (OLEDs) were fabricated using the ITO, GZO, and IZTO films as anode layers. The turn-on voltages at a current density of 4.5 mA/cm2, 5.5 mA/cm2, 6.5 mA/cm2 were 5.5 V, 13.7 V, and 4.7 V for the devices with ITO, GZO, and IZTO anodes, respectively. The best performance was observed with the IZTO film, indicating its suitability as an alternative material for conventional ITO anodes used in OLEDs and flexible displays. PMID:24266182

  14. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

    SciTech Connect

    Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua; Jin, Jidong; Du, Lulu; Xin, Qian; Song, Aimin

    2015-08-31

    The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

  15. Electromechanical properties of amorphous indium-gallium-zinc-oxide transistors structured with an island configuration on plastic

    NASA Astrophysics Data System (ADS)

    Park, Chang Bum; Na, Hyung Il; Yoo, Soon Sung; Park, Kwon-Shik

    2016-03-01

    A comparative study of the electromechanical properties was carried out on a low-temperature-processed amorphous indium-gallium-zinc-oxide thin-film transistor, particularly with regard to the structural design of the device under the stress accumulation of an outward bending surface. Shown herein is the reliable electromechanical integrity of island-structured devices against the mechanical strain at bending radii of mm order. The onset of crack strain also closely corresponded to the electrical failure of the stressed device. These results revealed that the island configuration on the bending surface effectively suppresses the stress accumulation on sheets composed of inorganic stacked layers in a uniaxial direction.

  16. Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

    PubMed

    Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

    2016-04-20

    In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation. PMID:27007748

  17. Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

    NASA Astrophysics Data System (ADS)

    Zhu, Wencong

    Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because

  18. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  19. Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

    SciTech Connect

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin; Migliorato, Piero

    2014-04-07

    We report on the generation and characterization of a hump in the transfer characteristics of amorphous indium gallium zinc-oxide thin-film transistors by positive bias temperature stress. The hump depends strongly on the gate bias stress at 100 °C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. Migration of donor defects from the interface towards the bulk may also occur under PBST at 100 °C.

  20. Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

    SciTech Connect

    Lee, Sangwon; Jeon, Kichan; Park, Jun-Hyun; Kim, Sungchul; Kong, Dongsik; Kim, Dong Myong; Kim, Dae Hwan; Kim, Sangwook; Kim, Sunil; Hur, Jihyun; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Park, Youngsoo; Jung, U-In

    2009-09-28

    Bipolar ac stress-induced instability of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors is comparatively investigated with that under a positive dc gate bias stress. While the positive dc gate bias stress-induced threshold voltage shift ({delta}V{sub T}) is caused by the charge trapping into the interface/gate dielectric as reported in previous works, the dominant mechanism of the ac stress-induced {delta}V{sub T} is observed to be due to the increase in the acceptorlike deep states of the density of states (DOS) in the a-IGZO active layer. Furthermore, it is found that the variation of deep states in the DOS makes a parallel shift in the I{sub DS}-V{sub GS} curve with an insignificant change in the subthreshold slope, as well as the deformation of the C{sub G}-V{sub G} curves.

  1. Sol-gel deposited gallium-doped zinc oxide electrode for polymer light-emitting diode applications

    NASA Astrophysics Data System (ADS)

    Kim, Donghyun; Ha, Jaeheung; Lee, Changhee; Hong, Yongtaek

    2012-09-01

    We have made a sol-gel deposited gallium-doped zinc oxide (GZO) film as a transparent conductive anode in polymer light-emitting diode (PLED) applications. The GZO films were obtained by spin-coating GZO precursor solutions followed by consecutive thermal annealing in the air and in the hydrogen-rich atmosphere. The resistance of GZO film was reduced to ~100 Ω/□ after thermal annealing in the hydrogen environment. Its surface roughness was sufficiently low (1.159 nm RMS) for depositing other polymer layers. We have fabricated PLEDs with quartz substrate / solution-processed GZO electrode (anode) / PEDOT:PSS (HITL) / SPG-01T (Green polymer light-emitting material purchased from Merck, EML) / Ca (EIL) / Al (Cathode). The fabricated devices showed current efficiency of 3.06 cd/A and power efficiency of 1.25 lm/W at luminance of 1000 cd/m2.

  2. Gallium-doped zinc oxide films as transparent electrodes for organic solar cell applications

    NASA Astrophysics Data System (ADS)

    Bhosle, V.; Prater, J. T.; Yang, Fan; Burk, D.; Forrest, S. R.; Narayan, J.

    2007-07-01

    We report microstructural characteristics and properties of gallium-doped ZnO films deposited on glass by pulsed laser deposition. The Zn0.95Ga0.05O film deposited at 200 °C and 1×10-3 Torr showed predominant ⟨0001⟩ orientation with a metallic behavior and a resistivity of 2×10-4 Ω cm at room temperature. Low resistivity of the ZnGaO films has been explained in terms of optimal combination of carrier concentration and minimized scattering, and is correlated with the microstructure and the deposition parameters. Power conversion efficiency comparable to indium tin oxide-based devices (1.25±0.05%) is achieved on a Zn0.95Ga0.05O/Cu-phthalocyanine/C60 double-heterojunction solar cell.

  3. Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors.

    PubMed

    Jaisutti, Rawat; Kim, Jaeyoung; Park, Sung Kyu; Kim, Yong-Hoon

    2016-08-10

    We report on highly stable amorphous indium-gallium-zinc oxide (IGZO) gas sensors for ultraviolet (UV)-activated room-temperature detection of volatile organic compounds (VOCs). The IGZO sensors fabricated by a low-temperature photochemical activation process and exhibiting two orders higher photocurrent compared to conventional zinc oxide sensors, allowed high gas sensitivity against various VOCs even at room temperature. From a systematic analysis, it was found that by increasing the UV intensity, the gas sensitivity, response time, and recovery behavior of an IGZO sensor were strongly enhanced. In particular, under an UV intensity of 30 mW cm(-2), the IGZO sensor exhibited gas sensitivity, response time and recovery time of 37%, 37 and 53 s, respectively, against 750 ppm concentration of acetone gas. Moreover, the IGZO gas sensor had an excellent long-term stability showing around 6% variation in gas sensitivity over 70 days. These results strongly support a conclusion that a low-temperature solution-processed amorphous IGZO film can serve as a good candidate for room-temperature VOCs sensors for emerging wearable electronics. PMID:27430635

  4. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiNx coupled junction

    NASA Astrophysics Data System (ADS)

    Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun

    2015-08-01

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiNx). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiNx junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm2 on-current density measured at -7 V; lower than 7.3 × 10-9 A/cm2 off-current density; 2.53 ideality factor; and high rectifying ratio of 108-109. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiNx/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

  5. Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments

    NASA Astrophysics Data System (ADS)

    Tak, Young Jun; Du Ahn, Byung; Park, Sung Pyo; Kim, Si Joon; Song, Ae Ran; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-02-01

    Indium-gallium-zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M-O) bonds through the decomposition-rearrangement of M-O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm2/Vs, 3.96 × 107 to 1.03 × 108, and 11.2 to 7.2 V, respectively.

  6. Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments.

    PubMed

    Tak, Young Jun; Ahn, Byung Du; Park, Sung Pyo; Kim, Si Joon; Song, Ae Ran; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-01-01

    Indium-gallium-zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M-O) bonds through the decomposition-rearrangement of M-O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm(2)/Vs, 3.96 × 10(7) to 1.03 × 10(8), and 11.2 to 7.2 V, respectively. PMID:26902863

  7. High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes.

    PubMed

    Secor, Ethan B; Smith, Jeremy; Marks, Tobin J; Hersam, Mark C

    2016-07-13

    Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm(2)/V·s and current on/off ratio of ∼10(5). The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications. PMID:27327555

  8. Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects

    NASA Astrophysics Data System (ADS)

    de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

    2015-11-01

    We study the evolution of the structural and electronic properties of crystalline indium gallium zinc oxide (IGZO) upon amorphization by first-principles calculation. The bottom of the conduction band (BCB) is found to be constituted of a pseudo-band of molecular orbitals that resonate at the same energy on different atomic sites. They display a bonding character between the s orbitals of the metal sites and an anti-bonding character arising from the interaction between the oxygen and metal s orbitals. The energy level of the BCB shifts upon breaking of the crystal symmetry during the amorphization process, which may be attributed to the reduction of the coordination of the cationic centers. The top of the valence band (TVB) is constructed from anti-bonding oxygen p orbitals. In the amorphous state, they have random orientation, in contrast to the crystalline state. This results in the appearance of localized tail states in the forbidden gap above the TVB. Zinc is found to play a predominant role in the generation of these tail states, while gallium hinders their formation. Last, we study the dependence of the fundamental gap and effective mass of IGZO on mechanical strain. The variation of the gap under strain arises from the enhancement of the anti-bonding interaction in the BCB due to the modification of the length of the oxygen-metal bonds and/or to a variation of the cation coordination. This effect is less pronounced for the amorphous material compared to the crystalline material, making amorphous IGZO a semiconductor of choice for flexible electronics. Finally, the effective mass is found to increase upon strain, in contrast to regular materials. This counterintuitive variation is due to the reduction of the electrostatic shielding of the cationic centers by oxygen, leading to an increase of the overlaps between the metal orbitals at the origin of the delocalization of the BCB. For the range of strain typically met in flexible electronics, the induced

  9. Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

    PubMed Central

    2014-01-01

    Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10−4 Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films. PMID:25352768

  10. Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices.

    PubMed

    Chang, Shang-Chou

    2014-01-01

    Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10(-4) Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films. PMID:25352768

  11. Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Chang, Shang-Chou

    2014-10-01

    Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10-4 Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films.

  12. Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Qian, Hui-Min; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Tang, Lan-Feng; Zhou, Dong; Ren, Fang-Fang; Zhang, Rong; Zheng, You-Liao; Huang, Xiao-Ming

    2015-07-01

    The time and temperature dependence of threshold voltage shift under positive-bias stress (PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτstress = 0.72 eV for the PBS process and an average effective energy barrier Eτrecovery = 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China

  13. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    SciTech Connect

    Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin

    2015-05-15

    We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  14. Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

    SciTech Connect

    Jo, Kwang-Won; Cho, Won-Ju

    2014-11-24

    In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV{sub ON}) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress.

  15. Crystallization behavior of amorphous indium-gallium-zinc-oxide films and its effects on thin-film transistor performance

    NASA Astrophysics Data System (ADS)

    Suko, Ayaka; Jia, JunJun; Nakamura, Shin-ichi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo

    2016-03-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) films were deposited by DC magnetron sputtering and post-annealed in air at 300-1000 °C for 1 h to investigate the crystallization behavior in detail. X-ray diffraction, electron beam diffraction, and high-resolution electron microscopy revealed that the IGZO films showed an amorphous structure after post-annealing at 300 °C. At 600 °C, the films started to crystallize from the surface with c-axis preferred orientation. At 700-1000 °C, the films totally crystallized into polycrystalline structures, wherein the grains showed c-axis preferred orientation close to the surface and random orientation inside the films. The current-gate voltage (Id-Vg) characteristics of the IGZO thin-film transistor (TFT) showed that the threshold voltage (Vth) and subthreshold swing decreased markedly after the post-annealing at 300 °C. The TFT using the totally crystallized films also showed the decrease in Vth, whereas the field-effect mobility decreased considerably.

  16. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

    SciTech Connect

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin; Migliorato, Piero

    2015-06-21

    We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.

  17. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    SciTech Connect

    Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

    2014-01-13

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

  18. Stabilities of amorphous indium gallium zinc oxide thin films under light illumination with various wavelengths and intensities

    NASA Astrophysics Data System (ADS)

    Kim, Ju-Yeon; Jeong, So Hyeon; Yu, Kyeong Min; Yun, Eui-Jung; Bae, Byung Seong

    2014-08-01

    We investigated the photo responses of an amorphous indium gallium zinc oxide (a-IGZO) thin film under light illumination with various wavelengths and intensities. By using the measured photo-conductivities of a-IGZO thin films, we extracted the photo excitation activation energy and dark relaxation activation energy through extended stretched exponential analysis. The stretched exponential analysis was found to describe well both the photoexcitation and the dark-relaxation characteristics. These analyses indicated that recombination takes place more slowly and through activation processes that are more deeply bound with the broader distribution of activation energies (Eac) than those corresponding to the photo-generation process. The longer wavelength of the incident light, the slower the dark-relaxation occurs because of the formation of higher Eac for the ionized oxygen vacancy (Vo2+) states. For the dark-relaxation process, we also observed that the stretching exponent increases and the distribution of energy levels became narrower for longer wavelengths. This suggests that the neutralization of Vo2+ to Vo is slower for longer wavelengths due to the higher energy barrier height (Eac) for the neutralization of Vo2+.

  19. Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics--a Comparative Study with Gallium Nitride.

    PubMed

    Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L; Roy, Ajit K; Luo, Tengfei

    2016-01-01

    Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN)--another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics. PMID:26928396

  20. Microscopic structure and electrical transport property of sputter-deposited amorphous indium-gallium-zinc oxide semiconductor films

    NASA Astrophysics Data System (ADS)

    Yabuta, H.; Kaji, N.; Shimada, M.; Aiba, T.; Takada, K.; Omura, H.; Mukaide, T.; Hirosawa, I.; Koganezawa, T.; Kumomi, H.

    2014-06-01

    We report on microscopic structures and electrical and optical properties of sputter-deposited amorphous indium-gallium-zinc oxide (a-IGZO) films. From electron microscopy observations and an x-ray small angle scattering analysis, it has been confirmed that the sputtered a-IGZO films consist of a columnar structure. However, krypton gas adsorption measurement revealed that boundaries of the columnar grains are not open-pores. The conductivity of the sputter-deposited a-IGZO films shows a change as large as seven orders of magnitude depending on post-annealing atmosphere; it is increased by N2-annealing and decreased by O2-annealing reversibly, at a temperature as low as 300°C. This large variation in conductivity is attributed to thermionic emission of carrier electrons through potential barriers at the grain boundaries, because temperature dependences of the carrier density and the Hall mobility exhibit thermal activation behaviours. The optical band-gap energy of the a-IGZO films changes between before and after annealing, but is independent of the annealing atmosphere, in contrast to the noticeable dependence of conductivity described above. For exploring other possibilities of a-IGZO, we formed multilayer films with an artificial periodic lattice structure consisting of amorphous InO, GaO, and ZnO layers, as an imitation of the layer-structured InGaZnO4 homologous phase. The hall mobility of the multilayer films was almost constant for thicknesses of the constituent layer between 1 and 6 Å, suggesting rather small contribution of lateral two-dimensional conduction It increased with increasing the thickness in the range from 6 to 15 Å, perhaps owing to an enhancement of two-dimensional conduction in InO layers.

  1. Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics - a Comparative Study with Gallium Nitride

    NASA Astrophysics Data System (ADS)

    Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L.; Roy, Ajit K.; Luo, Tengfei

    2016-03-01

    Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN) - another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics.

  2. Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics – a Comparative Study with Gallium Nitride

    PubMed Central

    Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L.; Roy, Ajit K.; Luo, Tengfei

    2016-01-01

    Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN) – another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics. PMID:26928396

  3. Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals

    NASA Astrophysics Data System (ADS)

    Gadre, Mandar J.; Alford, T. L.

    2011-08-01

    Amorphous indium gallium zinc oxide (a-IGZO) thin films of the highest transmittance reported in literature were initially deposited onto flexible polymer substrates at room temperature. The films were annealed in vacuum, air, and oxygen to enhance their electrical and optical performances. Electrical and optical characterizations were done before and after anneals. A partial reversal of the degradation in electrical properties upon annealing in oxygen was achieved by subjecting the films to subsequent vacuum anneals. A model was developed based on film texture and structural defects which showed close agreement between the measured and calculated carrier mobility values at low carrier concentrations (2-6 × 1019 cm-3).

  4. Non-equilibrium origin of high electrical conductivity in gallium zinc oxide thin films

    SciTech Connect

    Zakutayev, Andriy Ginley, David S.; Lany, Stephan; Perry, Nicola H.; Mason, Thomas O.

    2013-12-02

    Non-equilibrium state defines physical properties of materials in many technologies, including architectural, metallic, and semiconducting amorphous glasses. In contrast, crystalline electronic and energy materials, such as transparent conductive oxides (TCO), are conventionally thought to be in equilibrium. Here, we demonstrate that high electrical conductivity of crystalline Ga-doped ZnO TCO thin films occurs by virtue of metastable state of their defects. These results imply that such defect metastability may be important in other functional oxides. This finding emphasizes the need to understand and control non-equilibrium states of materials, in particular, their metastable defects, for the design of novel functional materials.

  5. Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

    PubMed

    Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

    2014-12-01

    The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions. PMID:25971080

  6. Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications

    NASA Astrophysics Data System (ADS)

    Yamauchi, Yoshimitsu; Kamakura, Yoshinari; Isagi, Yousuke; Matsuoka, Toshimasa; Malotaux, Satoshi

    2013-09-01

    A novel floating-gate oxide semiconductor (FLOTOS) memory using a wide-band-gap indium-gallium-zinc oxide (IGZO) is presented for low-power system-on-panel applications. An IGZO thin-film-transistor (TFT) is used as a memory transistor for controlling read current as well as a switching transistor for storing charges in a storage capacitor (Cs). The FLOTOS memory is fabricated using a standard IGZO TFT process without any additional process or mask steps. The proposed precharge-assisted threshold voltage compensation technique makes it possible to realize an infinite number of write cycles and a low-power write operation with a bit-line voltage of 5 V. Furthermore, excellent data retention longer than 10 h is obtained at 60 °C even under the worst bias-stress condition of read operation with the ultra low off-state leakage (2.8×10-20 A/µm) of the IGZO TFTs, which is estimated to be smaller by more than 7 orders of magnitude than that of polycrystalline silicon TFTs.

  7. Electrical and optical properties of gallium-doped magnesium zinc oxide system

    NASA Astrophysics Data System (ADS)

    Wei, Wei

    The primary aim in this thesis is to investigate Ga-doped Mg1-x ZnxO, as well as undoped Mg1-xZnxO for the application of transparent conducting oxide. For this thesis work, the films have been grown on sapphire using pulsed laser deposition technique. The films were grown under various deposition conditions in order to understand the effect of processing on the film properties. The grown films have been characterized using various techniques, including XRD, TEM, XPS, 4-probe resistivity measurements, Hall measurements and absorption/transmission spectroscopy. Undoped Mg1-xZnxO films have been grown at several temperatures between room temperature and 750°C. Photoluminescence was correlated with Urbach energy values which were determined from absorption spectrum. The film grown at 350°C exhibited lowest band-tail parameter values and highest photoluminescence values than the other films. The optical and electrical properties of heavily Ga-doped MgxZn 1-xO thin films were investigated. The film transparency is greater than 90% in the visible spectrum range. The absorption can be extended to lower wavelength range with higher magnesium concentration, which can improve the transparency in the ultraviolet wavelength range; however, conductivity is decreased. The optimum Ga concentration was found to be 0.5 at.%. At this Ga concentration, the film resistivity increased from 1.9x10 -3 to 3.62x10-2 O·cm as the magnesium concentration increased from 5 at.% to 15 at.%. The optical and electrical properties of Ga-doped MgxZn 1-xO thin films were investigated systematically. In these films, the Ga content was varied from 0.05 at.% to 7 at.% and the Mg content was varied from 5 at.% to 15 at.%. X-ray diffraction showed that the solid solubility limit of Ga in MgxZn1-xO is less than 3 at.%. The absorption spectra were fitted to examine Ga doping effects on bandgap and band tail characteristics. Distinctive trends in fitted bandgap and band tail characteristics were

  8. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    NASA Astrophysics Data System (ADS)

    Niang, K. M.; Barquinha, P. M. C.; Martins, R. F. P.; Cobb, B.; Powell, M. J.; Flewitt, A. J.

    2016-02-01

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 107 s-1. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

  9. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect

    Lai, Hsin-Cheng; Pei, Zingway; Jian, Jyun-Ruri; Tzeng, Bo-Jie

    2014-07-21

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

  10. Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals

    SciTech Connect

    Gadre, Mandar J.; Alford, T. L.

    2011-08-01

    Amorphous indium gallium zinc oxide (a-IGZO) thin films of the highest transmittance reported in literature were initially deposited onto flexible polymer substrates at room temperature. The films were annealed in vacuum, air, and oxygen to enhance their electrical and optical performances. Electrical and optical characterizations were done before and after anneals. A partial reversal of the degradation in electrical properties upon annealing in oxygen was achieved by subjecting the films to subsequent vacuum anneals. A model was developed based on film texture and structural defects which showed close agreement between the measured and calculated carrier mobility values at low carrier concentrations (2-6 x 10{sup 19} cm{sup -3}).

  11. Realization of write-once-read-many-times memory device with O{sub 2} plasma-treated indium gallium zinc oxide thin film

    SciTech Connect

    Liu, P. Chen, T. P. Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2014-01-20

    A write-once-read-many-times (WORM) memory devices based on O{sub 2} plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2 V is ∼10{sup 9} Ω for a device with the radius of 50 μm) as a result of the O{sub 2} plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2 V is ∼10{sup 3} Ω for the radius of 50 μm) by applying a voltage pulse (e.g., 10 V/1 μs). The WORM device has good data-retention and reading-endurance capabilities.

  12. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  13. Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

    NASA Astrophysics Data System (ADS)

    Kim, Joonwoo; Jeong, Soon Moon; Jeong, Jaewook

    2015-11-01

    We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 µm. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the field-effect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters.

  14. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymeric Gate Dielectric on a Flexible Substrate

    NASA Astrophysics Data System (ADS)

    Hyung, Gun Woo; Park, Jaehoon; Wang, Jian-Xun; Lee, Ho Won; Li, Zhao-Hui; Koo, Ja-Ryong; Kwon, Sang Jik; Cho, Eou-Sik; Kim, Woo Young; Kim, Young Kwan

    2013-07-01

    Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a solution-processed polymeric gate dielectric of cross-linked poly(4-vinylphenol) (c-PVP) film were fabricated on a poly(ethylene terephthalate) (PET) substrate on which an a-IGZO film, as the active channel layer, was deposited by radio frequency (RF) sputtering. The entire TFT fabrication process was carried out at a temperature below 110 °C. The device exhibited an on/off ratio of 1.5×106 and a high field-effect mobility of 10.2 cm2 V-1 s-1, which is, to our knowledge, the best result ever achieved among a-IGZO TFTs with polymeric gate dielectrics on a plastic substrate.

  15. Thermal oxidation of gallium arsenide

    SciTech Connect

    Monteiro, O.R.; Evans, J.W.

    1989-01-01

    Here we present some results of transmission electron microscopy and secondary ion mass spectroscopy of thermally oxidized gallium arsenide with different types of dopants. At temperatures below 400 /sup 0/C an amorphous oxide is formed. Oxidation at temperatures between 500 and 600 /sup 0/C initially produces an epitaxial film of ..gamma..-Ga/sub 2/O/sub 3/. As the reaction proceeds, this film becomes polycrystalline and then transforms to ..beta..-Ga/sub 2/O/sub 3/. This film contains small crystallites of As/sub 2/O/sub 5/ and As/sub 2/O/sub 3/ in the case of the chromium doped samples, whereas only the former was detected in the case of silicon and tellurium doped samples. Elemental arsenic was always found at the interface between the oxide and GaAs. Chromium doped gallium also exhibited a slower oxidation kinetics than the other materials.

  16. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation

    NASA Astrophysics Data System (ADS)

    An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin

    2014-08-01

    We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y2O3) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y2O3 passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO3-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

  17. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

    SciTech Connect

    Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun

    2015-08-03

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

  18. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

    NASA Astrophysics Data System (ADS)

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-03-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

  19. A normally-off microcontroller unit with an 85% power overhead reduction based on crystalline indium gallium zinc oxide field effect transistors

    NASA Astrophysics Data System (ADS)

    Ohshima, Kazuaki; Kobayashi, Hidetomo; Nishijima, Tatsuji; Yoneda, Seiichi; Tomatsu, Hiroyuki; Maeda, Shuhei; Tsukida, Kazuki; Takahashi, Kei; Sato, Takehisa; Watanabe, Kazunori; Yamamoto, Ro; Kozuma, Munehiro; Aoki, Takeshi; Yamade, Naoto; Ieda, Yoshinori; Miyairi, Hidekazu; Atsumi, Tomoaki; Shionoiri, Yutaka; Kato, Kiyoshi; Maehashi, Yukio; Koyama, Jun; Yamazaki, Shunpei

    2014-01-01

    A low-power normally-off microcontroller unit (NMCU) having state-retention flip-flops (SRFFs) using a c-axis aligned crystalline oxide semiconductor (CAAC-OS) such as indium gallium zinc oxide (IGZO) transistors and employing a distributed backup and recovery method (distributed method) is fabricated. Compared to an NMCU employing a centralized backup and recovery method (centralized method), the NMCU employing the distributed method can be powered off approximately 75 µs earlier after main processing and can start the main processing approximately 75 µs earlier after power-on. The NMCU employing the distributed method can reduce power overhead by approximately 85% and power consumption by approximately 18% compared to the NMCU employing the centralized method. The NMCU employing the distributed method can retain data even when it is powered off, can back up data at high speed, and can start effective processing immediately after power-on. The NMCU could be applied to a low-power MCU.

  20. Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

    SciTech Connect

    Watanabe, Ken; Lee, Dong-Hee; Sakaguchi, Isao; Haneda, Hajime; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo; Ohashi, Naoki

    2013-11-11

    An isotope tracer study, i.e., {sup 18}O/{sup 16}O exchange using {sup 18}O{sub 2} and H{sub 2}{sup 18}O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium–gallium–zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200 °C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for {sup 18}O{sub 2} than for H{sub 2}{sup 18}O. PDA in a humid atmosphere at 400 °C further suppressed the reactivity of O{sub 2} at the a-IGZO film surface, which is attributable to –OH-terminated surface formation.

  1. Low temperature near infrared plasmonic gas sensing of gallium and aluminum doped zinc oxide thin films from colloidal inks (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Sturaro, Marco; Della Gaspera, Enrico; Martucci, Alessandro; Guglielmi, Massimo

    2015-08-01

    We obtained Gallium-doped and Aluminum-doped Zinc Oxide nanocrystals by non aqueous colloidal heat-up synthesis. These nanocrystals are transparent in the visible range but exhibit localized surface plasmon resonances (LSPRs) in the near IR range, tunable and shiftable with dopant concentration (up to 20% mol nominal). GZO and AZO inks can be deposited by spin coating, dip coating or spray coating on glass or silicon, leading to uniform and high optical quality thin films. To enhance absorbtion in the infrared region, samples can be annealed in inert or reductant atmosphere (N2/Argon or H2 in Argon) resulting in plasmon intensity enhancement due to oxygen vacancies and conduction band electrons density increment. Then IR plasmon has been exploited for gas sensing application, according to the plasmon shifting for carrier density variations, due to electrons injection or removal by the target gas/sample chemical interactions. To obtain a functional sensor at low temperature, another treatment was investigated, involving surfanctant removal by dipping deposited films in a solution of organic acid, tipically oxalic acid in acetonitrile; such process could pave the way to obtain similar sensors deposited on plastics. Finally, GZO and AZO thin films proved sensibility to H2 and NOx, and in particular circumstances also to CO, from room temperature to 200°C. Sensibility behavior for different dopant concentration and temperture was investigated both in IR plasmon wavelengths (~2400 nm) and zinc oxide band gap (~370 nm). An enhancement in sensitivity to H2 is obtained by adding Pt nanoparticles, exploiting catalytic properties of Platinum for hydrogen splitting.

  2. Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

    NASA Astrophysics Data System (ADS)

    Gupta, Pranav

    This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

  3. Properties of c-axis-aligned crystalline indium-gallium-zinc oxide field-effect transistors fabricated through a tapered-trench gate process

    NASA Astrophysics Data System (ADS)

    Asami, Yoshinobu; Kurata, Motomu; Okazaki, Yutaka; Higa, Eiji; Matsubayashi, Daisuke; Okamoto, Satoru; Sasagawa, Shinya; Moriwaka, Tomoaki; Kakehata, Tetsuya; Yakubo, Yuto; Kato, Kiyoshi; Hamada, Takashi; Sakakura, Masayuki; Hayakawa, Masahiko; Yamazaki, Shunpei

    2016-04-01

    To achieve both low power consumption and high-speed operation, we fabricated c-axis-aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) field-effect transistors (FETs) with In-rich IGZO and common IGZO (\\text{In}:\\text{Ga}:\\text{Zn} = 1:1:1 in atomic ratio) active layers through a simple process using trench gates, and evaluated their characteristics. The results confirm that 60-nm-node IGZO FETs fabricated through a 450 °C process show an extremely low off-state current below the detection limit (at most 2 × 10-16 A) even at a measurement temperature of 150 °C. The results also reveal that the FETs with the In-rich IGZO active layer show a higher on-state current than those with the common IGZO active layer and have excellent frequency characteristics with a cutoff frequency and a maximum oscillation frequency of up to 20 and 6 GHz, respectively. Thus, we demonstrated that CAAC-IGZO FETs with trench gates are promising for achieving both low power consumption and high-speed operation.

  4. Improvement in reliability of amorphous indium-gallium-zinc oxide thin-film transistors with Teflon/SiO2 bilayer passivation under gate bias stress

    NASA Astrophysics Data System (ADS)

    Fan, Ching-Lin; Tseng, Fan-Ping; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der; Huang, Bohr-Ran

    2016-02-01

    The reliability of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with Teflon/SiO2 bilayer passivation prepared under positive and negative gate bias stresses (PGBS and NGBS, respectively) was investigated. Heavier electrical degradation was observed under PGBS than under NGBS, indicating that the environmental effects under PGBS are more evident than those under NGBS. The device with bilayer passivation under PGBS shows two-step degradation. The positive threshold voltage shifts during the initial stressing period (before 500 s), owing to the charges trapped in the gate insulator or at the gate insulator/a-IGZO active layer interface. The negative threshold voltage shift accompanies the increase in subthreshold swing (SS) for the continuous stressing period (after 500 s) owing to H2O molecules from ambience diffused within the a-IGZO TFTs. It is believed that Teflon/SiO2 bilayer passivation can effectively improve the reliability of the a-IGZO TFTs without passivation even though the devices are stressed under gate bias.

  5. Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N{sub 2}O plasma treatment

    SciTech Connect

    Jhu, Jhe-Ciou; Chang, Ting-Chang; Chang, Geng-Wei; Tai, Ya-Hsiang; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi

    2013-11-28

    An abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N{sub 2}O plasma treatment. Experimental verification shows that the N{sub 2}O plasma treatment enhances the thin film bonding strength, thereby suppressing the formation of temperature-dependent holes, which are generated above 400 K by oxygen atoms leaving their original sites. The N{sub 2}O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N{sub 2}O plasma treatment is much lower than that in as-fabricated devices. The N{sub 2}O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.

  6. Indium-gallium-zinc-oxide layer used to increase light transmittance efficiency of adhesive layer for stacked-type multijunction solar cells

    NASA Astrophysics Data System (ADS)

    Yoshidomi, Shinya; Kimura, Shunsuke; Hasumi, Masahiko; Sameshima, Toshiyuki

    2015-11-01

    We report the increase in transmittance efficiency of the intermediate layer for multijunction solar cells caused by the indium-gallium-zinc-oxide (IGZO) layer used as the antireflection layer. Si substrates coated with a 200-nm-thick IGZO layer with a refractive index of 1.85 were prepared. The resistivity of the IGZO layer was increased from 0.0069 (as-deposited) to 0.032 Ω cm by heat treatment at 350 °C for 1 h to prevent free-carrier optical absorption. Samples with the Si/IGZO/adhesive/IGZO/Si structure were fabricated. The average transmissivity for wavelengths between 1200 and 1600 nm was 49%, which was close to 55% of single-crystal silicon substrates. A high effective transmittance efficiency of 89% was experimentally achieved. The numerical calculation showed in an effective transmittance efficiency of 99% for 170-nm-thick antireflection layers with a resistivity of 0.6 Ω cm and a refractive index of 2.1.

  7. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    NASA Astrophysics Data System (ADS)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-01

    We have studied the effect of top gate bias (VTG) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm2 intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the VTG from -15 to +15 V. By changing VTG from negative to positive, the Fermi level (EF) shifts toward conduction band edge (EC), which substantially controls the conversion of neutral vacancy to charged one (VO → VO+/VO2+ + e-/2e-), peroxide (O22-) formation or conversion of ionized interstitial (Oi2-) to neutral interstitial (Oi), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows -2.7 V shift at VTG = -15 V, which gradually decreases to -0.42 V shift at VTG = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (VO+/VO2+/O22-/Oi) and/or hole trapping in the a-IGZO /interfaces.

  8. Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

    NASA Astrophysics Data System (ADS)

    Chun, Minkyu; Um, Jae Gwang; Park, Min Sang; Chowdhury, Md Delwar Hossain; Jang, Jin

    2016-07-01

    We report the abnormal behavior of the threshold voltage (VTH) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (VTG), while bottom gate bias (VBG) is less effect than VTG. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of In metal diffusion to the top SiO2/a-IGZO and also the existence of large amount of In+ under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH- at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of VTG both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.

  9. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C.

    PubMed

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-01-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm(2)/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites. PMID:26972476

  10. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

    PubMed Central

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-01-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites. PMID:26972476

  11. Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.

    PubMed

    Luo, Dongxiang; Xu, Hua; Zhao, Mingjie; Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

    2015-02-18

    Amorphous indium-gallium-zinc-oxide thin film transistors (α-IGZO TFTs) with damage-free back channel wet-etch (BCE) process were achieved by introducing a carbon nanofilm as a barrier layer. We investigate the effects of different source-and-drain (S/D) materials on TFT performance. We find the TFT with Ti/C S/D electrodes exhibits a superior performance with higher output current, lower threshold voltage, and higher effective electron mobility compared to that of Mo/C S/D electrodes. Transmittance electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) are employed to analysis the interfacial interaction between S/D metal/C/α-IGZO layers. The results indicate that the better performance of TFTs with Ti/C electrodes should be attributed to the formations of Ti-C and Ti-O at the Ti/C-contact regions, which lead to a lower contact resistance, whereas Mo film is relatively stable and does not react easily with C nanofilm, resulting in a nonohmic contact behavior between Mo/C and α-IGZO layer. However, both kinds of α-IGZO TFTs show good stability under thermal bias stress, indicating that the inserted C nanofilms could avoid the impact on the α-IGZO channel regions during S/D electrodes formation. Finally, we successfully fabricated a high-definition active-matrix organic lighting emitting diode prototype driven by α-IGZO TFTs with Ti/C electrodes in a pilot line. PMID:25619280

  12. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    SciTech Connect

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-07

    We have studied the effect of top gate bias (V{sub TG}) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm{sup 2} intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the V{sub TG} from −15 to +15 V. By changing V{sub TG} from negative to positive, the Fermi level (E{sub F}) shifts toward conduction band edge (E{sub C}), which substantially controls the conversion of neutral vacancy to charged one (V{sub O} → V{sub O}{sup +}/V{sub O}{sup 2+} + e{sup −}/2e{sup −}), peroxide (O{sub 2}{sup 2−}) formation or conversion of ionized interstitial (O{sub i}{sup 2−}) to neutral interstitial (O{sub i}), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at V{sub TG} = −15 V, which gradually decreases to −0.42 V shift at V{sub TG} = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (V{sub O}{sup +}/V{sub O}{sup 2+}/O{sub 2}{sup 2−}/O{sub i}) and/or hole trapping in the a-IGZO /interfaces.

  13. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

    SciTech Connect

    Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan E-mail: drlife@kookmin.ac.kr; Park, Jozeph; Ahn, Byung Du; Kim, Hyun-Suk E-mail: drlife@kookmin.ac.kr

    2015-03-23

    The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

  14. Zinc oxide overdose

    MedlinePlus

    Zinc oxide is an ingredient in many products. Some of these are certain creams and ointments used ... prevent or treat minor skin burns and irritation. Zinc oxide overdose occurs when someone eats one of ...

  15. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    SciTech Connect

    Flewitt, A. J.; Powell, M. J.

    2014-04-07

    It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65–0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10{sup 6}−10{sup 7} s{sup −1}, which suggests a weak localization of carriers in band tail states over a 20–40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage

  16. UV-Assisted Alcohol Sensors using Gallium Nitride Nanowires Functionalized with Zinc Oxide and Tin Dioxide Nanoparticles

    NASA Astrophysics Data System (ADS)

    Bajpai, Ritu

    The motivation behind this work has been to address two of the most challenging issues posed to semiconductor gas sensors--- tuning the device selectivity and sensitivity to a wide variety of gases. In a chemiresistor type nanowire sensor, the sensitivity and selectivity depend on the interaction of different chemical analytes with the nanowire surface. Constrained by the surface properties of the nanowire material, most nanowire sensors can detect only specific type of analytes. In order to make a nano-sensor array for a wide range of analytes, there is a need to tune the device sensitivity and selectivity towards different chemicals. Employing the inherent advantages of nanostructure based sensing such as large surface area, miniature size, low power consumption, and nmol/mol (ppb) sensitivity, an attempt has been made to propose a device with tunable selectivity and sensitivity. The idea proposed in this work is to functionalize GaN nanowires which have relatively inactive surface properties (i.e., with no chemiresistive sensitivity to different classes of organic vapors), with analyte dependent active metal oxides. The selectivity of the sensor devices is controlled independent of the surface properties of the nanowire itself. It is the surface properties of the functionalizing metal oxides which determine the selectivity of these sensors. Further facilitated by the proposed fabrication technique, these sensors can be easily tuned to detect different gases. The prototype developed in this work is that of a UV assisted alcohol sensor using GaN nanowires functionalized with ZnO and SnO2 nanoparticles. As opposed to the widely demonstrated metal oxide based sensors assisted by elevated temperature, the operation of photoconductive semiconductor sensor devices such as those fabricated in this work, can also be assisted by UV illumination at room temperature. Temperature assisted sensing requires an integrated on-chip heater, which could impose constraints on the

  17. UV-Assisted Alcohol Sensors using Gallium Nitride Nanowires Functionalized with Zinc Oxide and Tin Dioxide Nanoparticles

    NASA Astrophysics Data System (ADS)

    Bajpai, Ritu

    The motivation behind this work has been to address two of the most challenging issues posed to semiconductor gas sensors--- tuning the device selectivity and sensitivity to a wide variety of gases. In a chemiresistor type nanowire sensor, the sensitivity and selectivity depend on the interaction of different chemical analytes with the nanowire surface. Constrained by the surface properties of the nanowire material, most nanowire sensors can detect only specific type of analytes. In order to make a nano-sensor array for a wide range of analytes, there is a need to tune the device sensitivity and selectivity towards different chemicals. Employing the inherent advantages of nanostructure based sensing such as large surface area, miniature size, low power consumption, and nmol/mol (ppb) sensitivity, an attempt has been made to propose a device with tunable selectivity and sensitivity. The idea proposed in this work is to functionalize GaN nanowires which have relatively inactive surface properties (i.e., with no chemiresistive sensitivity to different classes of organic vapors), with analyte dependent active metal oxides. The selectivity of the sensor devices is controlled independent of the surface properties of the nanowire itself. It is the surface properties of the functionalizing metal oxides which determine the selectivity of these sensors. Further facilitated by the proposed fabrication technique, these sensors can be easily tuned to detect different gases. The prototype developed in this work is that of a UV assisted alcohol sensor using GaN nanowires functionalized with ZnO and SnO2 nanoparticles. As opposed to the widely demonstrated metal oxide based sensors assisted by elevated temperature, the operation of photoconductive semiconductor sensor devices such as those fabricated in this work, can also be assisted by UV illumination at room temperature. Temperature assisted sensing requires an integrated on-chip heater, which could impose constraints on the

  18. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

    SciTech Connect

    Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin

    2014-12-08

    We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm{sup 2}/V s to 17.9 cm{sup 2}/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO{sub 2}. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm{sup −3} to 5.83 g cm{sup −3} (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability.

  19. Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride

    SciTech Connect

    Pak, J.; Lin, W.; Wang, K.; Chinchore, A.; Shi, M.; Ingram, D. C.; Smith, A. R.; Sun, K.; Lucy, J. M.; Hauser, A. J.; Yang, F. Y.

    2010-07-15

    The authors report the growth of iron nitride on zinc-blende gallium nitride using molecular beam epitaxy. First, zinc-blende GaN is grown on a magnesium oxide substrate having (001) orientation; second, an ultrathin layer of FeN is grown on top of the GaN layer. In situ reflection high-energy electron diffraction is used to monitor the surface during growth, and a well-defined epitaxial relationship is observed. Cross-sectional transmission electron microscopy is used to reveal the epitaxial continuity at the gallium nitride-iron nitride interface. Surface morphology of the iron nitride, similar to yet different from that of the GaN substrate, can be described as plateau valley. The FeN chemical stoichiometry is probed using both bulk and surface sensitive methods, and the magnetic properties of the sample are revealed.

  20. Self- and zinc diffusion in gallium antimonide

    SciTech Connect

    Nicols, Samuel Piers

    2002-03-26

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak

  1. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

    SciTech Connect

    An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin

    2014-08-04

    We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

  2. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Park, Sang-Hee Ko; Choi, Kyung Cheol

    2016-05-01

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al2O3, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔVth) was 0 V even after a PBS time (tstress) of 3000 s under a gate voltage (VG) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔVth value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔVth values resulting from PBS quantitatively, the average oxide charge trap density (NT) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher NT resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of NT near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  3. High-performance low-cost back-channel-etch amorphous gallium-indium-zinc oxide thin-film transistors by curing and passivation of the damaged back channel.

    PubMed

    Park, Jae Chul; Ahn, Seung-Eon; Lee, Ho-Nyeon

    2013-12-11

    High-performance, low-cost amorphous gallium-indium-zinc oxide (a-GIZO) thin-film-transistor (TFT) technology is required for the next generation of active-matrix organic light-emitting diodes. A back-channel-etch structure is the most appropriate device structure for high-performance, low-cost a-GIZO TFT technology. However, channel damage due to source/drain etching and passivation-layer deposition has been a critical issue. To solve this problem, the present work focuses on overall back-channel processes, such as back-channel N2O plasma treatment, SiOx passivation deposition, and final thermal annealing. This work has revealed the dependence of a-GIZO TFT characteristics on the N2O plasma radio-frequency (RF) power and frequency, the SiH4 flow rate in the SiOx deposition process, and the final annealing temperature. On the basis of these results, a high-performance a-GIZO TFT with a field-effect mobility of 35.7 cm(2) V(-1) s(-1), a subthreshold swing of 185 mV dec(-1), a switching ratio exceeding 10(7), and a satisfactory reliability was successfully fabricated. The technology developed in this work can be realized using the existing facilities of active-matrix liquid-crystal display industries. PMID:24221957

  4. Investigation of the influence of cadmium processing on zinc gallium oxide:manganese thin films for photoluminescent and thin film electroluminescent applications

    NASA Astrophysics Data System (ADS)

    Flynn, Michael John

    concentration left by the sublimed material, which aided the incorporation and activation of the manganese. The cadmium in the sputtering targets also impacted the crystal structure of the films. Films from cadmium free targets exhibited a strong (111) x-ray diffraction peak, while those from cadmium processed targets more closely resembled the powder structure. The optimum thin film electroluminescent performance was obtained for films sputtered from targets processed with between 5% and 15% cadmium substituted for zinc. This was the result of improved diffusion during the anneals, due to the sublimation of cadmium oxide and the resulting large vacancy concentration. The best performance was obtained for films annealed at between 875°C and 900°C for 6--12 hours. These films exhibited both the maximum luminance (55 cd/m2 at 60 Hz) and the lowest transferred charge (˜20 muC/cm2). This combined for a peak efficiency of 0.5 lm/W at 60 Hz). Beyond 12 hours at 900°C or temperatures higher than this, EL performance degraded due to the decomposition of the thin film. It was concluded that the luminescent performance of this material is strongly influenced by the loss of cadmium during processing. The enhanced diffusion afforded by the cadmium sublimation results in improved EL performance at annealing temperature lower that that of pure zinc gallate.

  5. Resonant cavity modes in gallium oxide microwires

    NASA Astrophysics Data System (ADS)

    López, Iñaki; Nogales, Emilio; Méndez, Bianchi; Piqueras, Javier

    2012-06-01

    Fabry Perot resonant modes in the optical range 660-770 nm have been detected from single and coupled Cr doped gallium oxide microwires at room temperature. The luminescence is due to chromium ions and dominated by the broad band involving the 4T2-4A2 transition, strongly coupled to phonons, which could be of interest in tunable lasers. The confinement of the emitted photons leads to resonant modes detected at both ends of the wires. The separation wavelength between maxima follows the Fabry-Perot dependence on the wire length and the group refractive index for the Ga2O3 microwires.

  6. Doped zinc oxide microspheres

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1993-01-01

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel.

  7. Doped zinc oxide microspheres

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-12-14

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

  8. Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

    DOE PAGESBeta

    Jacobs, Benjamin W.; Ayres, Virginia M.; Stallcup, Richard E.; Hartman, Alan; Tupta, Mary Ann; Baczewski, Andrew David; Crimp, Martin A.; Halpern, Joshua B.; He, Maoqi; Shaw, Harry C.

    2007-10-19

    Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

  9. Arsenic doped zinc oxide

    SciTech Connect

    Volbers, N.; Lautenschlaeger, S.; Leichtweiss, T.; Laufer, A.; Graubner, S.; Meyer, B. K.; Potzger, K.; Zhou Shengqiang

    2008-06-15

    As-doping of zinc oxide has been approached by ion implantation and chemical vapor deposition. The effect of thermal annealing on the implanted samples has been investigated by using secondary ion mass spectrometry and Rutherford backscattering/channeling geometry. The crystal damage, the distribution of the arsenic, the diffusion of impurities, and the formation of secondary phases is discussed. For the thin films grown by vapor deposition, the composition has been determined with regard to the growth parameters. The bonding state of arsenic was investigated for both series of samples using x-ray photoelectron spectroscopy.

  10. Interstitial zinc clusters in zinc oxide

    NASA Astrophysics Data System (ADS)

    Gluba, M. A.; Nickel, N. H.; Karpensky, N.

    2013-12-01

    Doped zinc oxide (ZnO) exhibits anomalous Raman modes in the range of 270 to 870 cm-1. Commonly, the resonance at 275 cm-1 is attributed to the local vibration of Zn atoms in the vicinity of extrinsic dopants. We revisit this assignment by investigating the influence of isotopically purified zinc oxide thin films on the frequency of the vibrational mode around 275 cm-1. For this purpose, undoped and nitrogen-doped ZnO thin-films with Zn isotope compositions of natural Zn, 64Zn, 68Zn, and a 1:1 mixture of 64Zn and 68Zn were grown by pulsed laser deposition. The isotopic shift and the line shape of the Raman resonance around 275 cm-1 are analyzed in terms of three different microscopic models, which involve the vibration of (i) interstitial zinc atoms bound to extrinsic defects, (ii) interstitial diatomic Zn molecules, and (iii) interstitial zinc clusters. The energy diagram of interstitial Zn-Zn bonds in a ZnO matrix is derived from density functional theory calculations. The interstitial Zn-Zn bond is stabilized by transferring electrons from the antibonding orbital into the ZnO conduction band. This mechanism facilitates the formation of interstitial Zn clusters and fosters the common n-type doping asymmetry of ZnO.

  11. Gallium

    SciTech Connect

    1996-01-01

    Discovered in 1875 through a study of its spectral properties, gallium was the first element to be uncovered following the publication of Mendeleev`s Periodic Table. French chemist, P.E. Lecoq de Boisbaudran, named his element discovery in honor of his native country; gallium is derived from the Latin word for France-{open_quotes}Gallia.{close_quotes}. This paper describes the properties, sources, and market for gallium.

  12. Gallium Oxide Nanostructures for High Temperature Sensors

    SciTech Connect

    Chintalapalle, Ramana V.

    2015-04-30

    Gallium oxide (Ga2O3) thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts=25-800 °C). The structural characteristics and electronic properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga2O3 films. XRD and SEM analyses indicate that the Ga2O3 films grown at lower temperatures were amorphous while those grown at Ts≥500 oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films at Ts=300-800 °C. The electronic structure determination indicated that the nanocrystalline Ga2O3films exhibit a band gap of ~5 eV. Tungsten (W) incorporated Ga2O3 films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. No secondary phase formation was observed in W-incorporated Ga2O3 films. W-induced effects were significant on the structure and electronic properties of Ga2O3 films. The band gap of Ga2O3 films without W-incorporation was ~5 eV. Oxygen sensor characteristics evaluated using optical and electrical methods indicate a faster response in W-doped Ga2O3 films compared to intrinsic Ga2O3 films. The results demonstrate the applicability of both intrinsic and W-doped Ga-oxide films for oxygen sensor application at temperatures ≥700 °C.

  13. Influence of doping with third group oxides on properties of zinc oxide thin films

    SciTech Connect

    Palimar, Sowmya Bangera, Kasturi V.; Shivakumar, G. K.

    2013-03-15

    The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 10{sup 3} {Omega}{sup -1} cm{sup -1}. The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band.

  14. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then...

  15. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then...

  16. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then...

  17. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then...

  18. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then...

  19. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1993-01-01

    Varistors and/or resistors that includes doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  20. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-07-27

    Varistors and/or resistors are described that include doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  1. Cerium, gallium and zinc containing mesoporous bioactive glass coating deposited on titanium alloy

    NASA Astrophysics Data System (ADS)

    Shruti, S.; Andreatta, F.; Furlani, E.; Marin, E.; Maschio, S.; Fedrizzi, L.

    2016-08-01

    Surface modification is one of the methods for improving the performance of medical implants in biological environment. In this study, cerium, gallium and zinc substituted 80%SiO2-15%CaO-5%P2O5 mesoporous bioactive glass (MBG) in combination with polycaprolactone (PCL) were coated over Ti6Al4 V substrates by dip-coating method in order to obtain an inorganic-organic hybrid coating (MBG-PCL). Structural characterization was performed using XRD, nitrogen adsorption, SEM-EDXS, FTIR. The MBG-PCL coating uniformly covered the substrate with the thickness found to be more than 1 μm. Glass and polymer phases were detected in the coating along with the presence of biologically potent elements cerium, gallium and zinc. In addition, in vitro bioactivity was investigated by soaking the coated samples in simulated body fluid (SBF) for up to 30 days at 37 °C. The apatite-like layer was monitored by FTIR, SEM-EDXS and ICP measurements and it formed in all the samples within 15 days except zinc samples. In this way, an attempt was made to develop a new biomaterial with improved in vitro bioactive response due to bioactive glass coating and good mechanical strength of Ti6Al4 V alloy along with inherent biological properties of cerium, gallium and zinc.

  2. Zinc oxide nanorods

    NASA Astrophysics Data System (ADS)

    Chik, Hope Wuming

    Non-lithographic, bottom-up techniques have been developed to advance the state of the art and contribute to the development of new material structures, fabrication methods, devices, and applications using the Zinc Oxide material system as a demonstration vehicle. The novel low temperature catalytic vapour-liquid-solid growth process developed is technologically simple, inexpensive, and a robust fabrication technique offering complete control over the physical dimensions of the nanorod such as its diameter and length, and over the positioning of the nanorods for site-selective growth. By controlling the distribution of the Au catalysts with the use of a self-organized anodized aluminum oxide nanopore membrane as a template, we have been able to synthesize highly ordered, hexagonally packed, array of ZnO nanorods spanning a large area. These nanorods are single crystal, hexagonally shaped, indicative of the wurtzite structure, and are vertically aligned to the substrate. By pre-patterning the template, arbitrary nanorod patterns can be formed. We have also demonstrated the assembly of the nanorods into functional devices using controlled methods that are less resource intensive, easily scalable, and adaptable to other material systems, without resorting to the manipulation of each individual nanostructures. Examples of these devices include the random network device that exploits the common attributes of the nanorods, and those formed using an external field to control the nanorod orientation. Two and three terminal device measurements show that the as-grown nanorods are n-type doped, and that by controlling the external optical excitation and its test environment, the photoconductivity can be altered dramatically. Self assemble techniques such as the spontaneous formation of nanodendrites into complex networks of interconnects were studied. Controlled formation of interconnects achieved by controlling the placement of the catalyst is demonstrated by growing the

  3. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is...

  4. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 6 2013-04-01 2013-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is...

  5. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Zinc oxide. 182.8991 Section 182.8991 Food and... CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally recognized as safe when used...

  6. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of §...

  7. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of §...

  8. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 6 2014-04-01 2014-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is...

  9. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 3 2012-04-01 2012-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and... CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally recognized as safe when used...

  10. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is...

  11. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and... CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally recognized as safe when used...

  12. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and... CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally recognized as safe when used...

  13. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 6 2012-04-01 2012-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is...

  14. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of...

  15. Short channel effects on gallium nitride/gallium oxide nanowire transistors

    NASA Astrophysics Data System (ADS)

    Yu, J.-W.; Yeh, P.-C.; Wang, S.-L.; Wu, Y.-R.; Mao, M.-H.; Lin, H.-H.; Peng, L.-H.

    2012-10-01

    Gallium nitride/gallium oxide GaN/Ga2O3 nanowire metal-oxide-semiconductor field-effect-transistors are shown to operate at an average electron velocity of ˜1.24 × 107 cm/s and threshold-voltage roll-off of -0.2 V as the transistor gate length Lg reduced from 500 to 50 nm. Improvement of saturation current to 120 μA and unity current/power-gain cut-off frequency to 150/180 GHz is observed on Lg = 50 nm devices. Our study reveals the advantages of using (i) polarization-induced positive charges and high-k dielectric at the {11¯01¯}GaN/{002}Ga2O3 interface to provide carrier confinement and to shield the drain field, and (ii) polarization-induced negative charges at the (0001)GaN/sapphire interface to form a back-barrier to suppress leakage and improve the short-channel transport properties.

  16. Zinc oxide overdose

    MedlinePlus

    Desitin overdose; Calamine lotion overdose; Zinaderm overdose; Amalox overdose; Azo 22 overdose ... oxide ointment Diaper rash medicines Hemorrhoid medicines Skin lotions Calamine lotion Caladryl lotion Sunscreen lotion Cosmetics Paint ...

  17. Simultaneous determination of gallium and zinc in biological samples, wine, drinking water, and wastewater by derivative synchronous fluorescence spectrometry

    SciTech Connect

    Pozo, M.E.U.; de Torres, A.G.; Pavon, J.M.C.

    1987-04-15

    A simple, rapid, sensitive, and selective method for the simultaneous determination of gallium and zinc using derivative synchronous fluorescence spectrometry has been studied. This determination is based upon the formation of fluorescent complexes with salicylaldehyde thiocarbohydrazone (SATCH). The reaction is carried out at pH 4.7 in aqueous-ethanol medium (52% (v/v) ethanol). The use of second-derivative synchronous fluorescence spectrometry permits the simultaneous determination of gallium and zinc in the concentration intervals of 2-40 and 20-1500 ng/mL, respectively. The effect of interferences was studied. The method has been applied to the determination of gallium and zinc in biological samples (after destruction of the organic matter by using a HNO/sub 3/-H/sub 2/O/sub 2/ mixture), wine, drinking water, and wastewater.

  18. Measuring Nanoscale Heat Transfer for Gold-(Gallium Oxide)-Gallium Nitride Interfaces as a Function

    NASA Astrophysics Data System (ADS)

    Szwejkowski, Chester; Sun, Kai; Constantin, Costel; Giri, Ashutosh; Saltonstall, Christopher; Hopkins, Patrick; NanoSynCh Team; Exsite Team

    2014-03-01

    Gallium nitride (GaN) is considered the most important semiconductor after the discovery of Silicon. Understanding the properties of GaN is imperative in determining the utility and applicability of this class of materials to devices. We present results of time domain thermoreflectance (TDTR) measurements as a function of surface root mean square (RMS) roughness. We used commercially available 5mm x 5mm, single-side polished GaN (3-7 μm)/Sapphire (430 μm) substrates that have a Wurtzite crystal structure and are slightly n-type doped. The GaN substrates were annealed in the open atmosphere for 10 minutes (900-1000 °C). This high-temperature treatment produced RMS values from 1-60 nm and growth of gallium oxide (GaO) as measured with an atomic force microscopy and transmission electron microscopy respectively. A gold film (80nm) was deposited on the GaN surface using electron beam physical vapor deposition which was verified using ellipsometry and profilometry. The TDTR measurements suggest that the thermal conductivity decays exponentially with RMS roughness and that there is a minimum value for thermal boundary conductance at a roughness of 15nm.

  19. Zinc absorption from zinc oxide, zinc sulfate, zinc oxide + EDTA, or sodium-zinc EDTA does not differ when added as fortificants to maize tortillas.

    PubMed

    Hotz, Christine; DeHaene, Jessica; Woodhouse, Leslie R; Villalpando, Salvador; Rivera, Juan A; King, Janet C

    2005-05-01

    The fortification of staple foods with zinc may play an important role in achieving adequate zinc intakes in countries at risk of zinc deficiency. However, little is known about the relative bioavailability of different zinc compounds that may be used in food fortification. The objective of this study was to measure and compare fractional zinc absorption from a test meal that included a maize tortilla fortified with zinc oxide, zinc sulfate, zinc oxide + EDTA, or sodium-zinc EDTA. A double isotopic tracer ratio method ((67)Zn as oral tracer and (70)Zn as intravenous tracer) was used to estimate zinc absorption in 42 Mexican women living in a periurban community of Puebla State, Mexico. The test meal consisted of maize tortillas, yellow beans, chili sauce, and milk with instant coffee; it contained 3.3 mg zinc and had a phytate:zinc molar ratio of 17. Fractional zinc absorption did not differ significantly between the test groups (ANOVA; P > 0.05). Percent absorptions were (mean +/- SD) zinc oxide, 10.8 +/- 0.9; zinc sulfate, 10.0 +/- 0.02; zinc oxide + EDTA, 12.7 +/- 1.5; and sodium-zinc EDTA, 11.1 +/- 0.7. We conclude that there was no difference in zinc absorption from ZnO and ZnSO(4) when added as fortificants to maize tortillas and consumed with beans and milk. The addition of EDTA with zinc oxide or the use of prechelated sodium-zinc EDTA as fortificants did not result in higher zinc absorption from the test meal. PMID:15867288

  20. Smooth cubic commensurate oxides on gallium nitride

    SciTech Connect

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Losego, Mark D.; Mita, Seiji; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul; Biegalski, Michael D.; Christen, Hans M.

    2014-02-14

    Smooth, commensurate alloys of 〈111〉-oriented Mg{sub 0.52}Ca{sub 0.48}O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  1. Bidirectional reflectance of zinc oxide

    NASA Technical Reports Server (NTRS)

    Scott, R.

    1973-01-01

    This investigation was undertaken to determine original and useful information about the bidirection reflectance of zinc oxide. The bidirectional reflectance will be studied for the spectra between .25-2.5 microns and the hemisphere above the specimen. The following factors will be considered: (1) surface conditions; (2) specimen preparation; (3) specimen substrate, (4) polarization; (5) depolarization; (6) wavelength; and (7) angles of incident and reflection. The bidirectional reflectance will be checked by experimentally determined angular hemispherical measurements or hemispherical measurements will be used to obtain absolute bidirectional reflectance.

  2. Directed spatial organization of zinc oxide nanostructures

    DOEpatents

    Hsu, Julia; Liu, Jun

    2009-02-17

    A method for controllably forming zinc oxide nanostructures on a surface via an organic template, which is formed using a stamp prepared from pre-defined relief structures, inking the stamp with a solution comprising self-assembled monolayer (SAM) molecules, contacting the stamp to the surface, such as Ag sputtered on Si, and immersing the surface with the patterned SAM molecules with a zinc-containing solution with pH control to form zinc oxide nanostructures on the bare Ag surface.

  3. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The... (a)(1) and (b). (b) Uses and restrictions. Zinc oxide may be safely used in cosmetics, including cosmetics intended for use in the area of the eye, in amounts consistent with good manufacturing...

  4. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The... (a)(1) and (b). (b) Uses and restrictions. Zinc oxide may be safely used in cosmetics, including cosmetics intended for use in the area of the eye, in amounts consistent with good manufacturing...

  5. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The... (a)(1) and (b). (b) Uses and restrictions. Zinc oxide may be safely used in cosmetics, including cosmetics intended for use in the area of the eye, in amounts consistent with good manufacturing...

  6. Transformation of zinc hydroxide chloride monohydrate to crystalline zinc oxide.

    PubMed

    Moezzi, Amir; Cortie, Michael; McDonagh, Andrew

    2016-04-25

    Thermal decomposition of layered zinc hydroxide double salts provides an interesting alternative synthesis for particles of zinc oxide. Here, we examine the sequence of changes occurring as zinc hydroxide chloride monohydrate (Zn5(OH)8Cl2·H2O) is converted to crystalline ZnO by thermal decomposition. The specific surface area of the resultant ZnO measured by BET was 1.3 m(2) g(-1). A complicating and important factor in this process is that the thermal decomposition of zinc hydroxide chloride is also accompanied by the formation of volatile zinc-containing species under certain conditions. We show that this volatile compound is anhydrous ZnCl2 and its formation is moisture dependent. Therefore, control of atmospheric moisture is an important consideration that affects the overall efficiency of ZnO production by this process. PMID:27030646

  7. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

    PubMed Central

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm2 using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si. PMID:25593562

  8. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Banski, M.; Misiewicz, J.; Lecerf, C.; Marie, P.; Cardin, J.; Portier, X.

    2010-09-01

    Gallium oxide and more particularly β-Ga2O3 matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

  9. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

    SciTech Connect

    Podhorodecki, A.; Banski, M.; Misiewicz, J.; Lecerf, C.; Marie, P.; Cardin, J.; Portier, X.

    2010-09-15

    Gallium oxide and more particularly {beta}-Ga{sub 2}O{sub 3} matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

  10. Direct electron beam writing of gallium oxide on GaAs(111) As surfaces

    NASA Astrophysics Data System (ADS)

    Alonso, M.; Sacedón, J. L.; Soria, F.

    1984-07-01

    In this letter we show the possibility of a direct electron beam writing on GaAs (111) As by electron stimulated oxidation. An estimate of the writing velocity is also given. The analysis of the profiles of the oxide spots by Auger spectroscopy indicates the stability of the gallium oxide formed, and the post-oxidation formation of an As-rich interface.

  11. Reference Data for the Density and Viscosity of Liquid Cadmium, Cobalt, Gallium, Indium, Mercury, Silicon, Thallium, and Zinc

    SciTech Connect

    Assael, Marc J.; Armyra, Ivi J.; Brillo, Juergen; Stankus, Sergei V.; Wu Jiangtao; Wakeham, William A.

    2012-09-15

    The available experimental data for the density and viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc have been critically examined with the intention of establishing both a density and a viscosity standard. All experimental data have been categorized into primary and secondary data according to the quality of measurement, the technique employed and the presentation of the data, as specified by a series of criteria. The proposed standard reference correlations for the density of liquid cadmium, cobalt, gallium, indium, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 0.6, 2.1, 0.4, 0.5, 2.2, 0.9, and 0.7, respectively. In the case of mercury, since density reference values already exist, no further work was carried out. The standard reference correlations for the viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 9.4, 14.0, 13.5, 2.1, 7.3, 15.7, 5.1, and 9.3, respectively.

  12. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    NASA Astrophysics Data System (ADS)

    Burghoorn, M.; Kniknie, B.; van Deelen, J.; Xu, M.; Vroon, Z.; van Ee, R.; van de Belt, R.; Buskens, P.

    2014-12-01

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.

  13. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    SciTech Connect

    Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van; Xu, M.; Vroon, Z.; Belt, R. van de; Buskens, P. E-mail: buskens@dwi.rwth-aachen.de

    2014-12-15

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.

  14. Total neutron scattering investigation of the structure of a cobalt gallium oxide spinel prepared by solvothermal oxidation of gallium metal.

    PubMed

    Playford, Helen Y; Hannon, Alex C; Tucker, Matthew G; Lees, Martin R; Walton, Richard I

    2013-11-13

    A new solvothermal synthesis route to mixed-metal gallium oxides with the spinel structure has been developed for ternary oxides of ideal composition Ga(3-x)M(x)O(4-y) (M=Co, Zn, Ni). The structure of the novel cobalt gallate produced in this manner, Ga(1.767(8))Co(0.973(8))O(3.752(8)), has been determined from total neutron scattering to be a partially defective spinel with mixed-valent cobalt (approximately 25% Co(3+) and 75% Co(2+)) and with vacancies on approximately 6% of oxygen sites. Pair distribution function (PDF) analysis reveals significant local deviations from the average cubic structure, which are attributed to the conflicting coordination preferences of the Co(2+) (potential Jahn-Teller distortion) and Ga(3+) (Ga off-centring). Reverse Monte Carlo (RMC) modelling supports this conclusion since different metal-oxygen bond-distance distributions are found for the two cations in the refined configuration. An investigation of magnetic properties shows evidence of short-range magnetic order and spin-glass-like behaviour, consistent with the structural disorder of the material. PMID:24141264

  15. 1-Dimensional Zinc Oxide Nanomaterial Growth and Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Choi, Hyung Woo

    Zinc oxide (ZnO) has attracted much interest during last decades as a functional material. Furthermore, ZnO is a potential material for transparent conducting oxide material competing with indium tin oxide (ITO), graphene, and carbon nanotube film. It has been known as a conductive material when doped with elements such as indium, gallium and aluminum. The solubility of those dopant elements in ZnO is still debatable; but, it is necessary to find alternative conducting materials when their form is film or nanostructure for display devices. This is a consequence of the ever increasing price of indium. In addition, a new generation solar cell (nanostructured or hybrid photovoltaics) requires compatible materials which are capable of free standing on substrates without seed or buffer layers and have the ability introduce electrons or holes pathway without blocking towards electrodes. The nanostructures for solar cells using inorganic materials such as silicon (Si), titanium oxide (TiO2), and ZnO have been an interesting topic for research in solar cell community in order to overcome the limitation of efficiency for organic solar cells. This dissertation is a study of the rational solution-based synthesis of 1-dimentional ZnO nanomaterial and its solar cell applications. These results have implications in cost effective and uniform nanomanufacturing for the next generation solar cells application by controlling growth condition and by doping transition metal element in solution.

  16. Patterned Fabrication of Zinc Oxide Nanowire Arrays

    NASA Astrophysics Data System (ADS)

    Khan, Sahar; Lamson, Thomas; Xu, Huizhong

    Zinc oxide nanowires possess desirable mechanical, thermodynamic, electrical, and optical properties. Although the hydrothermal growth process can be applied in tolerable growth conditions, the dimension and density of nanowires has a complex dependence on substrate pre-treatment, precursor concentrations, and growth conditions. Precise control of the geometry and density of nanowires as well as the location of nanowires would allow for the fabrication of useful nanowaveguide devices. In this work, we used electron beam lithography to pattern hole arrays in a polymer layer on gold-coated glass substrates and synthesized zinc oxide nanowires inside these holes. Arrays of nanowires with diameters ranging from 50 nm to 140 nm and various spacings were obtained. The transmission of light through these zinc oxide nanowire arrays in a silver film was also studied. This research was supported by the Seed Grant Program of St. John's University and the National Science Foundation under Grant No. CBET-0953645.

  17. Zinc oxide interdigitated electrode for biosensor application

    NASA Astrophysics Data System (ADS)

    Sin L., L.; Arshad, M. K. Md.; Fathil, M. F. M.; Adzhri, R.; M. Nuzaihan M., N.; Ruslinda, A. R.; Gopinath, Subash C. B.; Hashim, U.

    2016-07-01

    In biosensors, zinc oxide (ZnO) thin film plays a crucial role in term of stability, sensitivity, biocompatibility and low cost. Interdigitated electrode (IDE) design is one of the device architecture in biosensor for label free, stability and sensitivity. In this paper, we discuss the fabrication of zinc oxide deposited on the IDE as a transducer for sensing of biomolecule. The formation of APTES had increase the performance of the surface functionalization..Furthermore we extend the discuss on the surface functionalization process which is utilized for probe attachment onto the surface of biosensor through surface immobilization process, thus enables the sensing of biomolecules for biosensor application.

  18. Photoemission studies of wurtzite zinc oxide.

    NASA Technical Reports Server (NTRS)

    Powell, R. A.; Spicer, W. E.; Mcmenamin, J. C.

    1972-01-01

    The electronic structure of wurtzite zinc oxide, investigated over the widest possible photon energy range by means of photoemission techniques, is described. Of particular interest among the results of the photoemission study are the location of the Zn 3rd core states, the width of the upper valence bands, and structure in the conduction-band and valence-band density of states.

  19. Aluminum doped zinc oxide for organic photovoltaics

    SciTech Connect

    Murdoch, G. B.; Hinds, S.; Sargent, E. H.; Tsang, S. W.; Mordoukhovski, L.; Lu, Z. H.

    2009-05-25

    Aluminum doped zinc oxide (AZO) was grown via magnetron sputtering as a low-cost alternative to indium tin oxide (ITO) for organic photovoltaics (OPVs). Postdeposition ozone treatment resulted in devices with lower series resistance, increased open-circuit voltage, and power conversion efficiency double that of devices fabricated on untreated AZO. Furthermore, cells fabricated using ozone treated AZO and standard ITO displayed comparable performance.

  20. A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide

    NASA Technical Reports Server (NTRS)

    Kuhlman, G. J.

    1979-01-01

    The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.

  1. Zinc in +III oxidation state

    NASA Astrophysics Data System (ADS)

    Samanta, Devleena; Jena, Puru

    2012-02-01

    The possibility of Group 12 elements, such as Zn, Cd, and Hg existing in an oxidation state of +III or higher has fascinated chemists for decades. Significant efforts have been made in the past to achieve higher oxidation states for the heavier congener mercury (since the 3^rd ionization potential of the elements decrease as we go down the periodic table). It took nearly 20 years before experiment could confirm the theoretical prediction that Hg indeed can exist in an oxidation state of +IV. While this unusual property of Hg is attributed to the relativistic effects, Zn being much lighter than Hg has not been expected to have an oxidation state higher than +II. Using density functional theory we show that an oxidation state of +III for Zn can be realized by choosing specific ligands with large electron affinities i.e. superhalogens. We demonstrate this by a systematic study of the interaction of Zn with F, BO2, and AuF6 ligands whose electron affinities are progressively higher, namely, 3.4 eV, 4.4 eV, and 8.4 eV, respectively. Discovery of higher oxidation states of elements can help in the formulation of new reactions and hence in the development of new chemistry.

  2. Correlation of Zinc with Oxidative Stress Biomarkers

    PubMed Central

    Morales-Suárez-Varela, María; Llopis-González, Agustín; González-Albert, Verónica; López-Izquierdo, Raúl; González-Manzano, Isabel; Cháves, Javier; Huerta-Biosca, Vicente; Martin-Escudero, Juan C.

    2015-01-01

    Hypertension and smoking are related with oxidative stress (OS), which in turn reports on cellular aging. Zinc is an essential element involved in an individual’s physiology. The aim of this study was to evaluate the relation of zinc levels in serum and urine with OS and cellular aging and its effect on the development of hypertension. In a Spanish sample with 1500 individuals, subjects aged 20–59 years were selected, whose zinc intake levels fell within the recommended limits. These individuals were classified according to their smoking habits and hypertensive condition. A positive correlation was found (Pearson’s C = 0.639; p = 0.01) between Zn serum/urine quotient and oxidized glutathione levels (GSSG). Finally, risk of hypertension significantly increased when the GSSG levels exceeded the 75 percentile; OR = 2.80 (95%CI = 1.09–7.18) and AOR = 3.06 (95%CI = 0.96–9.71). Low zinc levels in serum were related with OS and cellular aging and were, in turn, to be a risk factor for hypertension.  PMID:25774936

  3. Formation of zinc oxide films using submicron zinc particle dispersions

    SciTech Connect

    Rajachidambaram, Meena Suhanya; Varga, Tamas; Kovarik, Libor; Sanghavi, Rahul P.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Han, Seungyeol; Chang, Chih-hung; Herman, Gregory S.

    2012-07-27

    The thermal oxidation of submicron metallic Zn particles was studied as a method to form nanostructured ZnO films. The particles used for this work were characterized by electron microscopy, x-ray diffraction and thermal analysis to evaluate the Zn-ZnO core shell structure, surface morphology, and oxidation characteristics. Significant nanostructural changes were observed for films annealed to 400 °C or higher, where nanoflakes, nanoribbons, nanoneedles and nanorods were formed as a result of stress induced fractures arising in the ZnO outer shell due to differential thermal expansion between the metallic Zn core and the ZnO shell. Mass transport occurs through these defects due to the high vapor pressure for metallic Zn at temperatures above 230 °C, whereupon the Zn vapor rapidly oxidizes in air to form the ZnO nanostructures. The Zn particles were also incorporated into zinc indium oxide precursor solutions to form thin film transistor test structures to evaluate the potential of forming nanostructured field effect sensors using simple solution processing.

  4. Network array of zinc oxide whiskers

    NASA Astrophysics Data System (ADS)

    Xu, C. X.; Sun, X. W.; Chen, B. J.; Dong, Z. L.; Yu, M. B.; Zhang, X. H.; Chua, S. J.

    2005-01-01

    A zinc oxide (ZnO) whisker network array with sixfold symmetry was fabricated on ZnO-buffered (0001) sapphire substrate by the vapour-phase transport method using a mixture of zinc oxide and graphite powders as source materials and patterned gold as catalyst. From the ZnO buffer layer, hexagonal ZnO nanorods with identical in-plane structure grew epitaxially along the [0001] orientation to form vertical stems. The branches grew horizontally from six side-surfaces of the vertical stem along [01\\bar {1}0] and other equivalent directions. Most whiskers were confined along the six preferential orientations and interconnected with each other to form a regular network structure. The growth mechanism is discussed.

  5. Summary review of health effects associated with zinc and zinc oxide: health issue assessment

    SciTech Connect

    Not Available

    1987-07-01

    Zinc is a dense, bluish-white, relatively soft metal used extensively in the galvanizing of iron and steel. Zinc oxide, the most valued of the variety of compounds formed by zinc is used principally in rubber products as an activator in the vulcanization process and in the treatment of burns, infections, and skin diseases. Zinc occurs naturally in the environment; however, zinc may also enter the environment as the result of mining and processing the production of zinc oxide and the manufacture and use of products containing zinc oxide, the combustion of coal and oil, the production of iron and steel, and the incineration of refuse. Humans are mainly exposed to zinc through the ingestion of food (between 8 and 18.6 mg/kg/day) and drink (averaging up to 10 mg/day). Based on annual average airborne zinc concentrations in areas throughout the United States without mines or smelters of generally < 1mg/cu. m., the contribution of zinc from inhaled air represents an insignificant amount of daily zinc exposure, averaging approximately 20 micrograms. The literature on the toxic effects of zinc is limited. The most widely known systemic effect resulting from acute inhalation of freshly formed zinc oxide fumes is a disease called metal fume fever. Metal fume fever occurs in certain occupational settings and the exposure level at which the fever occurs is not known.

  6. Process for preparing zinc oxide-based sorbents

    DOEpatents

    Gangwal, Santosh Kumar; Turk, Brian Scott; Gupta, Raghubir Prasad

    2011-06-07

    The disclosure relates to zinc oxide-based sorbents, and processes for preparing and using them. The sorbents are preferably used to remove one or more reduced sulfur species from gas streams. The sorbents comprise an active zinc component, optionally in combination with one or more promoter components and/or one or more substantially inert components. The active zinc component is a two phase material, consisting essentially of a zinc oxide (ZnO) phase and a zinc aluminate (ZnAl.sub.2O.sub.4) phase. Each of the two phases is characterized by a relatively small crystallite size of typically less than about 500 Angstroms. Preferably the sorbents are prepared by converting a precursor mixture, comprising a precipitated zinc oxide precursor and a precipitated aluminum oxide precursor, to the two-phase, active zinc oxide containing component.

  7. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

    SciTech Connect

    Kerr, A. J.; Chagarov, E.; Kaufman-Osborn, T.; Kummel, A. C.; Gu, S.; Wu, J.; Asbeck, P. M.; Madisetti, S.; Oktyabrsky, S.

    2014-09-14

    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al{sub 2}O{sub 3} gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001)

  8. Copper, silver, gold and zinc, cadmium, mercury oxides and hydroxides

    SciTech Connect

    Dirkse, T.P.

    1986-01-01

    This book provides a compilation of solubility data published up to 1984, including evaluations of the data. Data are presented on the following: copper (I) oxide; copper (II) oxide and hydroxide; silver (I) oxide; silver (II) oxide; gold (III) hydroxide; zinc oxide and hydroxide; cadmium oxide and hydroxide; and mercury (II) oxide.

  9. Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowiresvia Chemical Vapor Transport

    SciTech Connect

    Johnson, M.C.; Aloni, S.; McCready, D.E.; Bourret-Courchesne, E.D.

    2006-03-13

    We utilized a vapor-liquid-solid growth technique to synthesize indium oxide, gallium oxide, and tin oxide nanowires using chemical vapor transport with gold nanoparticles as the catalyst. Using identical growth parameters we were able to synthesize single crystal nanowires typically 40-100 nm diameter and more than 10-100 microns long. The products were characterized by means of XRD, SEM and HRTEM. All the wires were grown under the same growth conditions with growth rates inversely proportional to the source metal vapor pressure. Initial experiments show that different transparent oxide nanowires can be grown simultaneously on a single substrate with potential application for multi-component gas sensors.

  10. The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

    NASA Technical Reports Server (NTRS)

    Littlejohn, M. A.; Anikara, R.

    1972-01-01

    The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.

  11. Characterization of Amorphous Zinc Tin Oxide Semiconductors

    SciTech Connect

    Rajachidambaram, Jaana Saranya; Sanghavi, Shail P.; Nachimuthu, Ponnusamy; Shutthanandan, V.; Varga, Tamas; Flynn, Brendan T.; Thevuthasan, Suntharampillai; Herman, Gregory S.

    2012-06-12

    Amorphous zinc tin oxide (ZTO) was investigated to determine the effect of deposition and post annealing conditions on film structure, composition, surface contamination, and thin film transistor (TFT) device performance. X-ray diffraction results indicated that the ZTO films remain amorphous even after annealing to 600 °C. We found that the bulk Zn:Sn ratio of the sputter deposited films were slightly tin rich compared to the composition of the ceramic sputter target, and there was a significant depletion of zinc at the surface. X-ray photoelectron spectroscopy also indicated that residual surface contamination depended strongly on the sample post-annealing conditions where water, carbonate and hydroxyl species were absorbed to the surface. Electrical characterization of ZTO films, using TFT test structures, indicated that mobilities as high as 17 cm2/Vs could be obtained for depletion mode devices.

  12. Recovery of gallium from aluminum industry residues

    SciTech Connect

    Carvalho, M.S.; Neto, K.C.M.; Nobrega, A.W.; Medeiros, J.A.

    2000-01-01

    A procedure is proposed to recover gallium from flue dust aluminum residues produced in plants by using solid-phase extraction with a commercial polyether-type polyurethane foam (PUF). Gallium can be separated from high concentrations of aluminum, iron, nickel, titanium, vanadium, copper, zinc, sulfate, fluoride, and chloride by extraction with PUF from 3 M sulfuric acid and 3 M sodium chloride concentration medium with at least a 92% efficiency. Gallium backextraction was fast and quantitative with ethanol solution. In all recovery steps commercial-grade reagents could be used, including tap water. The recovered gallium was precipitated with sodium hydroxide solution, purified by dissolution and precipitation, calcinated, and the final oxide was 98.6% pure.

  13. Zinc oxide nanostructures and nanoengineering

    NASA Astrophysics Data System (ADS)

    Banerjee, Debasish

    ZnO is a large band-gap (3.37 eV) semiconductor, a potentially important material for numerous optoelectronic applications. Nanostructures, by definition are the structures having at least one dimension between 1--100 nm. In this thesis we will investigate a brief account of the strategies to grow ZnO nanostructures. Since invariably nanomaterial properties tend to change significantly during scale-up from development on limited volume equipment. Goal of this study is to demonstrate a practical technique which is able to synthesize large quantities of nanowires while keeping the unique properties of nano-sized materials. Using ZnO as an example, we discussed a strategy to produce nanowires in gram quantity. Ability to define position, size, and density of nanostructures on surfaces enable detailed studies of the properties of individual sites as well as collective properties of the assembly. These periodic structures are usually manufactured using electron beam lithography, photolithography, or x-ray lithography techniques. These methods allow fabrication of nanostructures and provide highly reproducible results. However, they are mostly not scalable to large areas, and are limited by a multistage, time-consuming, and expensive preparation procedure. We described an unique technique combining nanosphere self-assembly lithography and vapor-liquid-solid (VLS) approach of fabricating periodic array of catalyst dots in various geometry and subsequently grow vertically aligned ZnO nanowires in a large area hoping to achieve enhanced ultraviolet lasing and many other photonic devices. ZnO being a transparent conducting oxide, the fabrication of ZnO field emitters can be easily integrated with ITO and ZnO thin film fabrication process. Thus a low cost solution for fabrication of field emission display can be realized using ZnO nanowires as field emitters. There have been several demonstrations of using ZnO nanowires as field emitters. However no significant improvement in

  14. Zinc absorption by young adults from supplemental zinc citrate is comparable with that from zinc gluconate and higher than from zinc oxide.

    PubMed

    Wegmüller, Rita; Tay, Fabian; Zeder, Christophe; Brnic, Marica; Hurrell, Richard F

    2014-02-01

    The water-soluble zinc salts gluconate, sulfate, and acetate are commonly used as supplements in tablet or syrup form to prevent zinc deficiency and to treat diarrhea in children in combination with oral rehydration. Zinc citrate is an alternative compound with high zinc content, slightly soluble in water, which has better sensory properties in syrups but no absorption data in humans. We used the double-isotope tracer method with (67)Zn and (70)Zn to measure zinc absorption from zinc citrate given as supplements containing 10 mg of zinc to 15 healthy adults without food and compared absorption with that from zinc gluconate and zinc oxide (insoluble in water) using a randomized, double-masked, 3-way crossover design. Median (IQR) fractional absorption of zinc from zinc citrate was 61.3% (56.6-71.0) and was not different from that from zinc gluconate with 60.9% (50.6-71.7). Absorption from zinc oxide at 49.9% (40.9-57.7) was significantly lower than from both other supplements (P < 0.01). Three participants had little or no absorption from zinc oxide. We conclude that zinc citrate, given as a supplement without food, is as well absorbed by healthy adults as zinc gluconate and may thus be a useful alternative for preventing zinc deficiency and treating diarrhea. The more insoluble zinc oxide is less well absorbed when given as a supplement without food and may be minimally absorbed by some individuals. This trial was registered at clinicaltrials.gov as NCT01576627. PMID:24259556

  15. Zinc Absorption by Young Adults from Supplemental Zinc Citrate Is Comparable with That from Zinc Gluconate and Higher than from Zinc Oxide123

    PubMed Central

    Wegmüller, Rita; Tay, Fabian; Zeder, Christophe; Brnić, Marica; Hurrell, Richard F.

    2014-01-01

    The water-soluble zinc salts gluconate, sulfate, and acetate are commonly used as supplements in tablet or syrup form to prevent zinc deficiency and to treat diarrhea in children in combination with oral rehydration. Zinc citrate is an alternative compound with high zinc content, slightly soluble in water, which has better sensory properties in syrups but no absorption data in humans. We used the double-isotope tracer method with 67Zn and 70Zn to measure zinc absorption from zinc citrate given as supplements containing 10 mg of zinc to 15 healthy adults without food and compared absorption with that from zinc gluconate and zinc oxide (insoluble in water) using a randomized, double-masked, 3-way crossover design. Median (IQR) fractional absorption of zinc from zinc citrate was 61.3% (56.6–71.0) and was not different from that from zinc gluconate with 60.9% (50.6–71.7). Absorption from zinc oxide at 49.9% (40.9–57.7) was significantly lower than from both other supplements (P < 0.01). Three participants had little or no absorption from zinc oxide. We conclude that zinc citrate, given as a supplement without food, is as well absorbed by healthy adults as zinc gluconate and may thus be a useful alternative for preventing zinc deficiency and treating diarrhea. The more insoluble zinc oxide is less well absorbed when given as a supplement without food and may be minimally absorbed by some individuals. This trial was registered at clinicaltrials.gov as NCT01576627. PMID:24259556

  16. Varistor action in zinc oxide suspension

    NASA Astrophysics Data System (ADS)

    Negita, K.; Yamaguchi, T.; Tsuchie, T.; Shigematsu, N.

    2003-04-01

    In a suspension composed of zinc oxide (ZnO) particles and silicone oil, it is found that the current density dramatically increases above a specific electric field (break down field Eb). In ac measurement, the nonlinear coefficient (α), which characterizes the relationship between current density J and the electric field E as J∝Eα, changes from ˜1 to ˜30 when increasing the electric field through Eb. On the basis of the α value, temperature dependence of Eb, etc., the mechanism of the fluid varistor is briefly discussed.

  17. Recent developments in zinc oxide target chemistry

    SciTech Connect

    Heaton, R.C.; Taylor, W.A.; Phillips, D.R.; Jamriska, D.J. Sr.; Garcia, J.B.

    1994-04-01

    Zinc oxide targets irradiated with high energy protons at the Los Alamos Meson Physics Facility (LAMPF) contain a number of radioactive spallation products in quantities large enough to warrant recovery. This paper describes methods for recovering {sup 7}Be, {sup 46}Sc, and {sup 48}V from such targets and offers suggestions on possible ways to recover additional isotopes. The proposed methods are based on traditional precipitation and ion exchange techniques, are readily adaptable to hot cell use, and produce no hazardous waste components. The products are obtained in moderate to high yields and have excellent radiopurity.

  18. Zinc oxide nanowire networks for macroelectronic devices

    NASA Astrophysics Data System (ADS)

    Unalan, Husnu Emrah; Zhang, Yan; Hiralal, Pritesh; Dalal, Sharvari; Chu, Daping; Eda, Goki; Teo, K. B. K.; Chhowalla, Manish; Milne, William I.; Amaratunga, Gehan A. J.

    2009-04-01

    Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.

  19. Hydrogen transport properties in zinc oxide

    NASA Astrophysics Data System (ADS)

    Nickel, N. H.

    2007-07-01

    Hydrogen diffusion in single crystal and polycrystalline zinc oxide (ZnO) was investigated by deuterium diffusion and hydrogen effusion measurements. The diffusion coefficient exhibits thermally activated behavior and varies between EA=0.17 and 0.37 eV. Interestingly, the change in EA is accompanied by a variation of the diffusion prefactor by about eight orders of magnitude. This indicates that EA does not represent the diffusion barrier. On the other hand, the H density of states derived from effusion data is consistent with originally reported values of the diffusion activation energy of EA≈1.0 eV.

  20. Directed spatial organization of zinc oxide nanorods.

    SciTech Connect

    Simmons, Neil C.; Liu, Jun; Voigt, James A.; Hsu, Julia W. P.; Tian, Zhengrong Ryan; Matzke, Carolyn M.

    2004-09-01

    The ability to precisely place nanomaterials at predetermined locations is necessary for realizing applications using these new materials. Using an organic template, we demonstrate directed growth of zinc oxide (ZnO) nanorods on silver films from aqueous solution. Spatial organization of ZnO nanorods in prescribed arbitrary patterns was achieved, with unprecedented control in selectivity, crystal orientation, and nucleation density. Surprisingly, we found that caboxylate endgroups of {omega}-alkanethiol molecules strongly inhibit ZnO nucleation. The mechanism for this observed selectivity is discussed.

  1. Investigating the effect of gallium curcumin and gallium diacetylcurcumin complexes on the structure, function and oxidative stability of the peroxidase enzyme and their anticancer and antibacterial activities.

    PubMed

    Jahangoshaei, Parisa; Hassani, Leila; Mohammadi, Fakhrossadat; Hamidi, Akram; Mohammadi, Khosro

    2015-10-01

    Curcumin has a wide spectrum of biological and pharmacological activities including anti-inflammatory, antioxidant, antiproliferative, antimicrobial and anticancer activities. Complexation of curcumin with metals has gained attention in recent years for improvement of its stability. In this study, the effect of gallium curcumin and gallium diacetylcurcumin on the structure, function and oxidative stability of horseradish peroxidase (HRP) enzyme were evaluated by spectroscopic techniques. In addition to the enzymatic investigation, the cytotoxic effect of the complexes was assessed on bladder, MCF-7 breast cancer and LNCaP prostate carcinoma cell lines by MTT assay. Furthermore, antibacterial activity of the complexes against S. aureus and E. coli was explored by dilution test method. The results showed that the complexes improve activity of HRP and also increase its tolerance against the oxidative condition. After addition of the complexes, affinity of HRP for hydrogen peroxide substrate decreases, while the affinity increases for phenol substrate. Circular dichroism, intrinsic and synchronous fluorescence spectra showed that the enzyme structure around the catalytic heme group becomes less compact and also the distance between the heme group and tryptophan residues increases due to binding of the complexes to HRP. On the whole, it can be concluded that the change in the enzyme structure upon binding to the gallium curcumin and gallium diacetylcurcumin complexes results in an increase in the antioxidant efficiency and activity of the peroxidise enzyme. The result of anticancer and antibacterial activities suggested that the complexes exhibit the potential for cancer treatment, but they have no significant antibacterial activity. PMID:26369539

  2. Zinc oxide doped graphene oxide films for gas sensing applications

    NASA Astrophysics Data System (ADS)

    Chetna, Kumar, Shani; Garg, A.; Chowdhuri, A.; Dhingra, V.; Chaudhary, S.; Kapoor, A.

    2016-05-01

    Graphene Oxide (GO) is analogous to graphene, but presence of many functional groups makes its physical and chemical properties essentially different from those of graphene. GO is found to be a promising material for low cost fabrication of highly versatile and environment friendly gas sensors. Selectivity, reversibility and sensitivity of GO based gas sensor have been improved by hybridization with Zinc Oxide nanoparticles. The device is fabricated by spin coating of deionized water dispersed GO flakes (synthesized using traditional hummer's method) doped with Zinc Oxide on standard glass substrate. Since GO is an insulator and functional groups on GO nanosheets play vital role in adsorbing gas molecules, it is being used as an adsorber. Additionally, on being exposed to certain gases the electric and optical characteristics of GO material exhibit an alteration in behavior. For the conductivity, we use Zinc Oxide, as it displays a high sensitivity towards conduction. The effects of the compositions, structural defects and morphologies of graphene based sensing layers and the configurations of sensing devices on the performances of gas sensors were investigated by Raman Spectroscopy, X-ray diffraction(XRD) and Keithley Sourcemeter.

  3. Photocatalytic oxidation of methane over silver decorated zinc oxide nanocatalysts.

    PubMed

    Chen, Xuxing; Li, Yunpeng; Pan, Xiaoyang; Cortie, David; Huang, Xintang; Yi, Zhiguo

    2016-01-01

    The search for active catalysts that efficiently oxidize methane under ambient conditions remains a challenging task for both C1 utilization and atmospheric cleansing. Here, we show that when the particle size of zinc oxide is reduced down to the nanoscale, it exhibits high activity for methane oxidation under simulated sunlight illumination, and nano silver decoration further enhances the photo-activity via the surface plasmon resonance. The high quantum yield of 8% at wavelengths <400 nm and over 0.1% at wavelengths ∼470 nm achieved on the silver decorated zinc oxide nanostructures shows great promise for atmospheric methane oxidation. Moreover, the nano-particulate composites can efficiently photo-oxidize other small molecular hydrocarbons such as ethane, propane and ethylene, and in particular, can dehydrogenize methane to generate ethane, ethylene and so on. On the basis of the experimental results, a two-step photocatalytic reaction process is suggested to account for the methane photo-oxidation. PMID:27435112

  4. Photocatalytic oxidation of methane over silver decorated zinc oxide nanocatalysts

    PubMed Central

    Chen, Xuxing; Li, Yunpeng; Pan, Xiaoyang; Cortie, David; Huang, Xintang; Yi, Zhiguo

    2016-01-01

    The search for active catalysts that efficiently oxidize methane under ambient conditions remains a challenging task for both C1 utilization and atmospheric cleansing. Here, we show that when the particle size of zinc oxide is reduced down to the nanoscale, it exhibits high activity for methane oxidation under simulated sunlight illumination, and nano silver decoration further enhances the photo-activity via the surface plasmon resonance. The high quantum yield of 8% at wavelengths <400 nm and over 0.1% at wavelengths ∼470 nm achieved on the silver decorated zinc oxide nanostructures shows great promise for atmospheric methane oxidation. Moreover, the nano-particulate composites can efficiently photo-oxidize other small molecular hydrocarbons such as ethane, propane and ethylene, and in particular, can dehydrogenize methane to generate ethane, ethylene and so on. On the basis of the experimental results, a two-step photocatalytic reaction process is suggested to account for the methane photo-oxidation. PMID:27435112

  5. Respiratory response of guinea pigs to zinc oxide fume

    SciTech Connect

    Amdur, M.O.; McCarthy, J.F.; Gill, M.W.

    1983-02-01

    Zinc has been found enriched in the fine particle fraction of atmospheric aerosols and in the surface layer of fly ash. Experimental combustion studies of coal have demonstrated that zinc is vaporized and recondensed into the submicrometer fraction of the combustion aerosols. This size fraction may contain as much as 1.5% zinc when a coal of high zinc content (Illinois No. 6) is used. Zinc sulfate and zinc ammonium sulfate are among the sulfates with demonstrable irritant potency. Zinc oxide was thus chosen as the initial aerosol for studies of biological and chemical interaction of high temperature generated submicrometer metal oxides with sulfur dioxide. This paper reports the respiratory response of guinea pigs to short term exposure to freshly formed zinc oxide fume. These studies of zinc oxide alone have relevance to industrial exposure. The recommended TLV for zinc oxide is 5 mg/m/sup 3/ and the recommended STEL is 10 mg/m/sup 3/. Concentrations used in our studies were below these recommended levels.

  6. Different Shades of Oxide: Wetting Mechanisms of Gallium-based Liquid Metal Drops

    NASA Astrophysics Data System (ADS)

    Doudrick, Kyle; Liu, Shanliangzui; Mutunga, Eva M.; Klein, Kate L.; Damle, Viraj; Varanasi, Kripa K.; Rykaczewski, Konrad

    2014-11-01

    Gallium-based liquid metals are of interest for a number of applications including biomedical devices, flexible electronics, and soft robotics. Yet, device fabrication with these materials is challenging because they adhere strongly to majority of common substrates. This unusually high adhesion is attributed to the formation of a thin gallium oxide shell, however, its role in the adhesion process has not yet been determined. Here, we show that, dependent on formation process and resulting morphology of the liquid metal-substrate interface, Galinstan adhesion can occur in two modes. The first mode occurs when the oxide shell is not broken as it comes in contact with the surface. Because of the nanoscale topology of the oxide, this mode results in minimal adhesion between the liquid metal and most solids, regardless of substrate's surface energy or texture. In the second mode, the formation of the Galinstan-substrate interface involves breaking of the original oxide skin and formation of a composite interface that includes contact between the substrate and pieces of old oxide, bare liquid metal, and new oxide. We show that in this mode Galinstan adhesion is dominated by the new oxide-substrate contact. KR acknowledges startup funding from ASU.

  7. Surface effects in zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Combe, Nicolas; Chassaing, Pierre-Marie; Demangeot, François

    2009-01-01

    Structural properties of zinc oxide nanoparticles are theoretically studied focusing on the effects induced by the surfaces. In this aim, we compare two models: an atomistic and an elastic model. Atomistic model uses a semiempirical potential: the shell model. Effects of surface relaxation and surface stress are taken into account in this model while they were not in the elastic model. Studying nanoparticles with sizes varying from 1.5 to 4.5 nm, we show that surface relaxation occurs on a typical length of about 1 nm in the vicinity of surfaces within the atomistic model. This significant length is due to the existence of long-range interaction forces in zinc oxide which is an ionocovalent material. Because this typical length is comparable to nanoparticle size, elasticity fails to reproduce correctly structural properties of the nanoparticles. As an illustration of structural properties changes by decreasing nanoparticles sizes, we study the nanoparticles acoustic vibrations eigenfrequencies focusing on the mostly observable modes by vibration spectroscopy. Differences between elasticity and atomistic calculations are attributed to surface effects. If elasticity acceptably provides vibration frequencies of most studied nanoparticles, it fails to reproduce them for nanoparticles with a size below an approximate value of 2.5 nm. We expect such effects to be experimentally observable.

  8. Transient laser annealing of zinc oxide nanoparticle inks to fabricate zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Willemann, Michael

    Display technology, which relies exclusively on amorphous silicon as the active material for driver electronics, has reached multiple impasses that limit future progress. In order to deliver higher resolutions, higher refresh rates, new display technologies, and innovative form factors, driver electronics must transition to higher performance materials like amorphous oxide semiconductors (AOSs). Transient laser annealing offers an attractive means to maximize performance while minimizing thermal budget, making it compatible with flexible back plane materials and roll-to-roll processing. This research investigates the deposition and annealing of zinc oxide nanoparticle inks to form fully densified crystalline and amorphous zinc oxide films. Processing routes for nanoparticle annealing, including ligand removal, calcining, and excimer pulse laser sintering on the nanosecond time scale, will be introduced that minimize defect formation and suppress the anomalous n-conductivity which is a major challenge to zinc oxide processing. Resistivities as high as 6 x 107 O-cm have been demonstrated. Laser processing on longer millisecond time scales can control defect formation to produce ZnO films without extrinsic doping which have low resistivity for intrinsic oxides, in the range of 10-1 - 10-2 O-cm. Finally, a viable process for the production of backgated ZnO transistors with promising characteristics is presented and the future implications for AOSs and transient thermal processing will be discussed.

  9. New CVD-based method for the growth of high-quality crystalline zinc oxide layers

    NASA Astrophysics Data System (ADS)

    Huber, Florian; Madel, Manfred; Reiser, Anton; Bauer, Sebastian; Thonke, Klaus

    2016-07-01

    High-quality zinc oxide (ZnO) layers were grown using a new chemical vapour deposition (CVD)-based low-cost growth method. The process is characterized by total simplicity, high growth rates, and cheap, less hazardous precursors. To produce elementary zinc vapour, methane (CH4) is used to reduce a ZnO powder. By re-oxidizing the zinc with pure oxygen, highly crystalline ZnO layers were grown on gallium nitride (GaN) layers and on sapphire substrates with an aluminum nitride (AlN) nucleation layer. Using simple CH4 as precursor has the big advantage of good controllability and the avoidance of highly toxic gases like nitrogen oxides. In photoluminescence (PL) measurements the samples show a strong near-band-edge emission and a sharp line width at 5 K. The good crystal quality has been confirmed in high resolution X-ray diffraction (HRXRD) measurements. This new growth method has great potential for industrial large-scale production of high-quality single crystal ZnO layers.

  10. Chelator free gallium-68 radiolabelling of silica coated iron oxide nanorods via surface interactions.

    PubMed

    Burke, Benjamin P; Baghdadi, Neazar; Kownacka, Alicja E; Nigam, Shubhanchi; Clemente, Gonçalo S; Al-Yassiry, Mustafa M; Domarkas, Juozas; Lorch, Mark; Pickles, Martin; Gibbs, Peter; Tripier, Raphaël; Cawthorne, Christopher; Archibald, Stephen J

    2015-09-28

    The commercial availability of combined magnetic resonance imaging (MRI)/positron emission tomography (PET) scanners for clinical use has increased demand for easily prepared agents which offer signal or contrast in both modalities. Herein we describe a new class of silica coated iron-oxide nanorods (NRs) coated with polyethylene glycol (PEG) and/or a tetraazamacrocyclic chelator (DO3A). Studies of the coated NRs validate their composition and confirm their properties as in vivo T2 MRI contrast agents. Radiolabelling studies with the positron emitting radioisotope gallium-68 (t1/2 = 68 min) demonstrate that, in the presence of the silica coating, the macrocyclic chelator was not required for preparation of highly stable radiometal-NR constructs. In vivo PET-CT and MR imaging studies show the expected high liver uptake of gallium-68 radiolabelled nanorods with no significant release of gallium-68 metal ions, validating our innovation to provide a novel simple method for labelling of iron oxide NRs with a radiometal in the absence of a chelating unit that can be used for high sensitivity liver imaging. PMID:26292197

  11. Relative Penetration of Zinc Oxide and Zinc Ions into Human Skin after Application of Different Zinc Oxide Formulations.

    PubMed

    Holmes, Amy M; Song, Zhen; Moghimi, Hamid R; Roberts, Michael S

    2016-02-23

    Zinc oxide (ZnO) is frequently used in commercial sunscreen formulations to deliver their broad range of UV protection properties. Concern has been raised about the extent to which these ZnO particles (both micronized and nanoparticulate) penetrate the skin and their resultant toxicity. This work has explored the human epidermal skin penetration of zinc oxide and its labile zinc ion dissolution product that may potentially be formed after application of ZnO nanoparticles to human epidermis. Three ZnO nanoparticle formulations were used: a suspension in the oil, capric caprylic triglycerides (CCT), the base formulation commonly used in commercially available sunscreen products; an aqueous ZnO suspension at pH 6, similar to the natural skin surface pH; and an aqueous ZnO suspension at pH 9, a pH at which ZnO is stable and there is minimal pH-induced impairment of epidermal integrity. In each case, the ZnO in the formulations did not penetrate into the intact viable epidermis for any of the formulations but was associated with an enhanced increase in zinc ion fluorescence signal in both the stratum corneum and the viable epidermis. The highest labile zinc fluorescence was found for the ZnO suspension at pH 6. It is concluded that, while topically applied ZnO does not penetrate into the viable epidermis, these applications are associated with hydrolysis of ZnO on the skin surface, leading to an increase in zinc ion levels in the stratum corneum, thence in the viable epidermis and subsequently in the systemic circulation and the urine. PMID:26741484

  12. An assessment of the validity of cerium oxide as a surrogate for plutonium oxide gallium removal studies

    SciTech Connect

    Kolman, D.G.; Park, Y.; Stan, M.; Hanrahan, R.J. Jr.; Butt, D.P.

    1999-03-01

    Methods for purifying plutonium metal have long been established. These methods use acid solutions to dissolve and concentrate the metal. However, these methods can produce significant mixed waste, that is, waste containing both radioactive and chemical hazards. The volume of waste produced from the aqueous purification of thousands of weapons would be expensive to treat and dispose. Therefore, a dry method of purification is highly desirable. Recently, a dry gallium removal research program commenced. Based on initial calculations, it appeared that a particular form of gallium (gallium suboxide, Ga{sub 2}O) could be evaporated from plutonium oxide in the presence of a reducing agent, such as small amounts of hydrogen dry gas within an inert environment. Initial tests using ceria-based material (as a surrogate for PuO{sub 2}) showed that thermally-induced gallium removal (TIGR) from small samples (on the order of one gram) was indeed viable. Because of the expense and difficulty of optimizing TIGR from plutonium dioxide, TIGR optimization tests using ceria have continued. This document details the relationship between the ceria surrogate tests and those conducted using plutonia.

  13. Microstructure and optoelectronic properties of galliumtitanium-zinc oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Shou-bu; Lu, Zhou; Zhong, Zhi-you; Long, Hao; Gu, Jin-hua; Long, Lu

    2016-07-01

    Gallium-titanium-zinc oxide (GTZO) transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.

  14. Kinetics of the reduction of the zinc oxide in zinc ferrite with iron

    SciTech Connect

    Donald, J.R.; Pickles, C.A.

    1995-12-31

    Electric arc furnace (EAF) dust, which can be considered as a by-product of the steel recycling process, contains significant quantities of recoverable zinc and iron, as well as hazardous elements such as cadmium, lead and chromium, which can be leached by ground water. The zinc in the EAF dust is found almost entirely in the form of either zinc oxide or zinc ferrite, the latter accounting for 20 to 50 percent of the total zinc. It is important that an efficient process be developed which renders the dust inert, while reclaiming the valuable metals to off-set processing costs. During the conventional carbothermic reduction processes, iron is formed, and this iron can participate in the reduction of the zinc oxide in zinc ferrite. In the present work, the reduction of the zinc oxide in zinc ferrite by iron according to the following reaction: ZnO{sup {sm_bullet}}Fe{sub 2}O{sub (s.s.)} + 2 Fe{sub (s)} = Zn{sub (g)} + 4 FeO{sub (s)} was studied in an argon atmosphere using a thermogravimetric technique. First, a thermodynamic analysis was performed using the F*A*C*T computational system. Then, the effects of briquette aspect ratio (l/d), temperature, zinc ferrite particle size, amount of iron added, as well as additions such as lime, sodium chloride, and calcium fluoride were investigated.

  15. Electrical characterization of plasma-grown oxides on gallium arsenide

    NASA Technical Reports Server (NTRS)

    Hshieh, F. I.; Bhat, K. N.; Ghandhi, S. K.; Borrego, J. M.

    1985-01-01

    Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.

  16. Investigations in gallium removal

    SciTech Connect

    Philip, C.V.; Pitt, W.W.; Beard, C.A.

    1997-11-01

    Gallium present in weapons plutonium must be removed before it can be used for the production of mixed-oxide (MOX) nuclear reactor fuel. The main goal of the preliminary studies conducted at Texas A and M University was to assist in the development of a thermal process to remove gallium from a gallium oxide/plutonium oxide matrix. This effort is being conducted in close consultation with the Los Alamos National Laboratory (LANL) personnel involved in the development of this process for the US Department of Energy (DOE). Simple experiments were performed on gallium oxide, and cerium-oxide/gallium-oxide mixtures, heated to temperatures ranging from 700--900 C in a reducing environment, and a method for collecting the gallium vapors under these conditions was demonstrated.

  17. Cubic zirconia as a species permeable coating for zinc diffusion in gallium arsenide

    SciTech Connect

    Bisberg, J.E.; Dabkowski, F.P.; Chin, A.K.

    1988-10-31

    Diffusion of zinc into GaAs through an yttria-stabilized cubic zirconia (YSZ) passivation layer has been demonstrated with an open-tube diffusion method. Pure zinc or GaAs/Zn/sub 2/As/sub 3/ sources produced high quality planar p-n junctions. The YSZ layer protects the GaAs surface from excessive loss of arsenic, yet is permeable to zinc, allowing its diffusion into the semiconductor. The YSZ films, deposited by electron beam evaporation, were typically 2000 A thick. Zinc diffusion coefficients (D/sub T/) at 650 /sup 0/C in the YSZ passivated GaAs ranged from 3.6 x 10/sup -10/ cm/sup 2//min for the GaAs/Zn/sub 2/As/sub 3/ source to 1.9 x 10/sup -9/ cm/sup 2//min for the pure zinc source. Doping concentrations for both YSZ passivated and uncapped samples were approximately 5 x 10/sup 19/ cm/sup -3/.

  18. Antifouling properties of zinc oxide nanorod coatings.

    PubMed

    Al-Fori, Marwan; Dobretsov, Sergey; Myint, Myo Tay Zar; Dutta, Joydeep

    2014-01-01

    In laboratory experiments, the antifouling (AF) properties of zinc oxide (ZnO) nanorod coatings were investigated using the marine bacterium Acinetobacter sp. AZ4C, larvae of the bryozoan Bugula neritina and the microalga Tetraselmis sp. ZnO nanorod coatings were fabricated on microscope glass substrata by a simple hydrothermal technique using two different molar concentrations (5 and 10 mM) of zinc precursors. These coatings were tested for 5 h under artificial sunlight (1060 W m(-2) or 530 W m(-2)) and in the dark (no irradiation). In the presence of light, both the ZnO nanorod coatings significantly reduced the density of Acinetobacter sp. AZ4C and Tetraselmis sp. in comparison to the control (microscope glass substratum without a ZnO coating). High mortality and low settlement of B. neritina larvae was observed on ZnO nanorod coatings subjected to light irradiation. In darkness, neither mortality nor enhanced settlement of larvae was observed. Larvae of B. neritina were not affected by Zn(2+) ions. The AF effect of the ZnO nanorod coatings was thus attributed to the reactive oxygen species (ROS) produced by photocatalysis. It was concluded that ZnO nanorod coatings effectively prevented marine micro and macrofouling in static conditions. PMID:25115521

  19. Zinc oxide thin film acoustic sensor

    NASA Astrophysics Data System (ADS)

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Mansour, Hazim Louis; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah

    2013-12-01

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  20. Photocatalytic paper using zinc oxide nanorods

    NASA Astrophysics Data System (ADS)

    Baruah, Sunandan; Jaisai, Mayuree; Imani, Reza; Nazhad, Mousa M.; Dutta, Joydeep

    2010-10-01

    Zinc oxide (ZnO) nanorods were grown on a paper support prepared from soft wood pulp. The photocatalytic activity of a sheet of paper with ZnO nanorods embedded in its porous matrix has been studied. ZnO nanorods were firmly attached to cellulose fibers and the photocatalytic paper samples were reused several times with nominal decrease in efficiency. Photodegradation of up to 93% was observed for methylene blue in the presence of paper filled with ZnO nanorods upon irradiation with visible light at 963 Wm-2 for 120 min. Under similar conditions, photodegradation of approximately 35% was observed for methyl orange. Antibacterial tests revealed that the photocatalytic paper inhibits the growth of Escherichia coli under room lighting conditions.

  1. Zinc oxide thin film acoustic sensor

    SciTech Connect

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah; Mansour, Hazim Louis

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  2. Production of nano zinc, zinc sulphide and nanocomplex of magnetite zinc oxide by Brevundimonas diminuta and Pseudomonas stutzeri.

    PubMed

    Mirhendi, Mansoureh; Emtiazi, Giti; Roghanian, Rasoul

    2013-12-01

    ZnO (Zincite) nanoparticle has many industrial applications and is mostly produced by chemical reactions, usually prepared by decomposition of zinc acetate or hot-injection and heating-up method. Synthesis of semi-conductor nanoparticles such as ZnS (Sphalerite) by ultrasonic was previously reported. In this work, high-zinc tolerant bacteria were isolated and used for nano zinc production. Among all isolated microorganisms, a gram negative bacterium which was identified as Brevundimonas diminuta could construct nano magnetite zinc oxide on bacterial surface with 22 nm in size and nano zinc with 48.29 nm in size. A piece of zinc metal was immersed in medium containing of pure culture of B. diminuta. Subsequently, a yellow-white biofilm was formed which was collected from the surface of zinc. It was dried at room temperature. The isolated biofilm was analysed by X-ray diffractometer. Interestingly, the yield of these particles was higher in the light, with pH 7 at 23°C. To the best of the authors knowledge, this is the first report about the production of nano zinc metal and nano zinc oxide that are stable and have anti-bacterial activities with magnetite property. Also ZnS (sized 12 nm) produced by Pseudomonas stutzeri, was studied by photoluminescence and fluorescent microscope. PMID:24206770

  3. Zinc

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Zinc was recognized as an essential trace metal for humans during the studies of Iranian adolescent dwarfs in the early 1960s. Zinc metal existing as Zn2+ is a strong electron acceptor in biological systems without risks of oxidant damage to cells. Zn2+ functions in the structure of proteins and is ...

  4. Microwave Synthesis of Zinc Hydroxy Sulfate Nanoplates and Zinc Oxide Nanorods in the Classroom

    ERIC Educational Resources Information Center

    Dziedzic, Rafal M.; Gillian-Daniel, Anne Lynn; Peterson, Greta M.; Martínez-Herna´ndez, Kermin J.

    2014-01-01

    In this hands-on, inquiry-based lab, high school and undergraduate students learn about nanotechnology by synthesizing their own nanoparticles in a single class period. This simple synthesis of zinc oxide nanorods and zinc hydroxy sulfate nanoplates can be done in 15 min using a household microwave oven. Reagent concentration, reaction…

  5. Diffusion of zinc vacancies and interstitials in zinc oxide

    NASA Astrophysics Data System (ADS)

    Erhart, Paul; Albe, Karsten

    2006-05-01

    The self-diffusion coefficient of zinc in ZnO is derived as a function of the chemical potential and Fermi level from first-principles calculations. Density functional calculations in combination with the climbing image-nudged elastic band method are used in order to determine migration barriers for vacancy, interstitial, and interstitialcy jumps. Zinc interstitials preferentially diffuse to second nearest neighbor positions. They become mobile at temperatures as low as 90-130K and therefore allow for rapid defect annealing. Under predominantly oxygen-rich and n-type conditions self-diffusion occurs via a vacancy mechanism.

  6. Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern

    NASA Astrophysics Data System (ADS)

    Han, Nam; Viet Cuong, Tran; Han, Min; Deul Ryu, Beo; Chandramohan, S.; Bae Park, Jong; Hye Kang, Ji; Park, Young-Jae; Bok Ko, Kang; Yun Kim, Hee; Kyu Kim, Hyun; Hyoung Ryu, Jae; Katharria, Y. S.; Choi, Chel-Jong; Hong, Chang-Hee

    2013-02-01

    The future of solid-state lighting relies on how the performance parameters will be improved further for developing high-brightness light-emitting diodes. Eventually, heat removal is becoming a crucial issue because the requirement of high brightness necessitates high-operating current densities that would trigger more joule heating. Here we demonstrate that the embedded graphene oxide in a gallium nitride light-emitting diode alleviates the self-heating issues by virtue of its heat-spreading ability and reducing the thermal boundary resistance. The fabrication process involves the generation of scalable graphene oxide microscale patterns on a sapphire substrate, followed by its thermal reduction and epitaxial lateral overgrowth of gallium nitride in a metal-organic chemical vapour deposition system under one-step process. The device with embedded graphene oxide outperforms its conventional counterpart by emitting bright light with relatively low-junction temperature and thermal resistance. This facile strategy may enable integration of large-scale graphene into practical devices for effective heat removal.

  7. Toxicokinetics of zinc oxide nanoparticles in rats

    NASA Astrophysics Data System (ADS)

    Chung, H. E.; Yu, J.; Baek, M.; Lee, J. A.; Kim, M. S.; Kim, S. H.; Maeng, E. H.; Lee, J. K.; Jeong, J.; Choi, S. J.

    2013-04-01

    Zinc oxide (ZnO) nanoparticle have been extensively applied to diverse industrial fields because they possess UV light absorption, catalytic, semi-conducting, and magnetic characteristics as well as antimicrobial property. However, up to date, toxicological effects of ZnO nanoparticles in animal models have not been completely determined. Moreover, little information is available about kinetic behaviors of ZnO nanoparticles in vivo, which will be crucial to predict their potential chronic toxicity after long-term exposure. The aim of this study was, therefore, to evaluate the pharmacokinetics and toxicokinetics of ZnO nanoparticles after single-dose and repeated dose 90-day oral administration in male and female rats, respectively. The blood samples were collected following administration of three different doses (125, 250, and 500 mg/kg) and ZnO concentration was assessed by measuring zinc level with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The result showed that the plasma ZnO concentration significantly increased in a dose-dependent manner, but decreased within 24 h after single-dose oral administration up to 500 mg/kg, without any significant difference between gender. However, when repeated dose 90-day oral toxicity study was performed, the elevated plasma concentrations did not return to normal control levels in all the cases, indicating their toxicity potential. These findings suggest that repeated oral exposure to ZnO nanoparticles up to the dose of 125 mg/kg could accumulate in the systemic circulation, thereby implying that the NOAEL values could be less than 125 mg/kg via oral intake.

  8. Bioavailability of Zinc in Wistar Rats Fed with Rice Fortified with Zinc Oxide

    PubMed Central

    Della Lucia, Ceres Mattos; Santos, Laura Luiza Menezes; Rodrigues, Kellen Cristina da Cruz; Rodrigues, Vivian Cristina da Cruz; Martino, Hércia Stampini Duarte; Pinheiro Sant’Ana, Helena Maria

    2014-01-01

    The study of zinc bioavailability in foods is important because this mineral intake does not meet the recommended doses for some population groups. Also, the presence of dietary factors that reduce zinc absorption contributes to its deficiency. Rice fortified with micronutrients (Ultra Rice®) is a viable alternative for fortification since this cereal is already inserted into the population habit. The aim of this study was to evaluate the bioavailability of zinc (Zn) in rice fortified with zinc oxide. During 42 days, rats were divided into four groups and fed with diets containing two different sources of Zn (test diet: UR® fortified with zinc oxide, or control diet: zinc carbonate (ZnCO3)), supplying 50% or 100%, respectively, of the recommendations of this mineral for animals. Weight gain, food intake, feed efficiency ratio, weight, thickness and length of femur; retention of zinc, calcium (Ca) and magnesium (Mg) in the femur and the concentrations of Zn in femur, plasma and erythrocytes were evaluated. Control diet showed higher weight gain, feed efficiency ratio, retention of Zn and Zn concentration in the femur (p < 0.05). However, no differences were observed (p > 0.05) for dietary intake, length and thickness of the femur, erythrocyte and plasmatic Zn between groups. Although rice fortified with zinc oxide showed a lower bioavailability compared to ZnCO3, this food can be a viable alternative to be used as a vehicle for fortification. PMID:24932657

  9. The kinetic of photoreactions in zinc oxide microrods

    NASA Astrophysics Data System (ADS)

    Fiedot, M.; Rac, O.; Suchorska-Woźniak, P.; Nawrot, W.; Teterycz, H.

    2016-01-01

    Zinc oxide is the oldest sensing material used in the chemical resistive gas sensors which allow to detect many gases, such as carbon oxide, nitrogen oxides and other. This material is also widely used in medicine and daily life as antibacterial agent. For this reason this semiconductor is often synthesized on the polymer substrates such as foils and textiles. In presented results zinc oxide was deposited on the surface of poly(ethylene terephthalate) foil to obtain antibacterial material. As synthesis method chemical bath deposition was chosen. The growth of zinc oxide structures was carried out in water solution of zinc nitrate (V) and hexamethylenetetramine in 90°C during 9 h. Because antibacterial properties of ZnO are strongly depended on photocatalytic and electric properties of this semiconductor impedance spectroscopy measurements were carried out. During the measurements material was tested with and without UV light to determinate the kinetic of photoreactions in zinc oxide. Moreover the composite was analyzed by XRD diffraction and scanning electron microscope. The X-ray analysis indicated that obtained material has the structure of wurtzite which is typical of zinc oxide. SEM images showed that on the PET foil microrods of ZnO were formed. The impedance spectroscopy measurements of ZnO layer showed that in UV light significant changes in the conductivity of the material are observed.

  10. Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions

    SciTech Connect

    Zhang, Xueqiang; Lamere, Edward; Ptasinska, Sylwia; Liu, Xinyu; Furdyna, Jacek K.

    2014-05-05

    The manipulation of semiconductor surfaces by tuning their electronic properties and surface chemistry is an essential ingredient for key applications in areas such as electronics, sensors, and photovoltaic devices. Here, in-situ surface reactions on gallium arsenide (GaAs) are monitored for two morphologies: a simple planar crystalline surface with (100) orientation and an ensemble of GaAs nanowires, both exposed to oxygen environment. A variety of oxide surface species, with a significant enhancement in oxidation states in the case of nanowires, are detected via near ambient pressure X-ray photoelectron spectroscopy. This enhancement in oxidation of GaAs nanowires is due to their higher surface area and the existence of more active sites for O{sub 2} dissociation.

  11. Zinc oxide nanoflowers make new blood vessels

    NASA Astrophysics Data System (ADS)

    Barui, Ayan Kumar; Veeriah, Vimal; Mukherjee, Sudip; Manna, Joydeb; Patel, Ajay Kumar; Patra, Sujata; Pal, Krishnendu; Murali, Shruthi; Rana, Rohit K.; Chatterjee, Suvro; Patra, Chitta Ranjan

    2012-11-01

    It is well established that angiogenesis is the process of formation of new capillaries from pre-existing blood vessels. It is a complex process, involving both pro- and anti-angiogenic factors, and plays a significant role in physiological and pathophysiological processes such as embryonic development, atherosclerosis, post-ischemic vascularization of the myocardium, tumor growth and metastasis, rheumatoid arthritis etc. This is the first report of zinc oxide (ZnO) nanoflowers that show significant pro-angiogenic properties (formation of new capillaries from pre-existing blood vessels), observed by in vitro and in vivo angiogenesis assays. The egg yolk angiogenesis assay using ZnO nanoflowers indicates the presence of matured blood vessels formation. Additionally, it helps to promote endothelial cell (EA.hy926 cells) migration in wound healing assays. Formation of reactive oxygen species (ROS), especially hydrogen peroxide (H2O2)--a redox signaling molecule, might be the plausible mechanism for nanoflower-based angiogenesis. Angiogenesis by nanoflowers may provide the basis for the future development of new alternative therapeutic treatment strategies for cardiovascular and ischemic diseases, where angiogenesis plays a significant role.It is well established that angiogenesis is the process of formation of new capillaries from pre-existing blood vessels. It is a complex process, involving both pro- and anti-angiogenic factors, and plays a significant role in physiological and pathophysiological processes such as embryonic development, atherosclerosis, post-ischemic vascularization of the myocardium, tumor growth and metastasis, rheumatoid arthritis etc. This is the first report of zinc oxide (ZnO) nanoflowers that show significant pro-angiogenic properties (formation of new capillaries from pre-existing blood vessels), observed by in vitro and in vivo angiogenesis assays. The egg yolk angiogenesis assay using ZnO nanoflowers indicates the presence of matured blood

  12. Nonstoichiometric zinc oxide and indium-doped zinc oxide: Electrical conductivity and {sup 111}In-TDPAC studies

    SciTech Connect

    Wang, R.; Sleight, A.W.; Platzer, R.; Gardner, J.A.

    1996-02-15

    Indium-doped zinc oxide powders have been prepared which show room-temperature electrical conductivities as high as 30 {Omega}{sup {minus}1} cm{sup {minus}1}. The indium doping apparently occurs as Zn{sub 1-x}In{sub x}O,Zn{sub 1-y}In{sub y}O{sub 1+y/2}, or a combination of these. Optimum conductivity occurs for Zn{sub 1-x}In{sub x}O where the maximum value of x obtained was about 0.5 at%. The degrees of sample reduction were determined by iodimetric titration. Time differential perturbed angular correlation (TDPAC) spectroscopy on indium doped zinc oxide is consistent with indium substituting at normal zinc sites in the ZnO lattice. TDPAC studies on zinc oxide annealed under zinc vapors show a second environment for the {sup 111}In probe. In this case, there is an unusually high temperature dependence of the electric field gradient which may be caused by a nearby zinc interstitial. An important conclusion of this work is that zinc interstitials are not ionized and do not therefore contribute significantly to the increased conductivity of reduced zinc oxide.

  13. Acetone sensor based on zinc oxide hexagonal tubes

    SciTech Connect

    Hastir, Anita Singh, Onkar Anand, Kanika Singh, Ravi Chand

    2014-04-24

    In this work hexagonal tubes of zinc oxide have been synthesized by co-precipitation method. For structural, morphological, elemental and optical analysis synthesized powders were characterized by using x-ray diffraction, field emission scanning microscope, EDX, UV-visible and FTIR techniques. For acetone sensing thick films of zinc oxide have been deposited on alumina substrate. The fabricated sensors exhibited maximum sensing response towards acetone vapour at an optimum operating temperature of 400°C.

  14. Gallium scan

    MedlinePlus

    Liver gallium scan; Bony gallium scan ... You will get a radioactive material called gallium injected into your vein. The gallium travels through the bloodstream and collects in the bones and certain organs. Your health care provider will ...

  15. Nano zinc oxide-sodium alginate antibacterial cellulose fibres.

    PubMed

    Varaprasad, Kokkarachedu; Raghavendra, Gownolla Malegowd; Jayaramudu, Tippabattini; Seo, Jongchul

    2016-01-01

    In the present study, antibacterial cellulose fibres were successfully fabricated by a simple and cost-effective procedure by utilizing nano zinc oxide. The possible nano zinc oxide was successfully synthesized by precipitation technique and then impregnated effectively over cellulose fibres through sodium alginate matrix. XRD analysis revealed the 'rod-like' shape alignment of zinc oxide with an interplanar d-spacing of 0.246nm corresponding to the (101) planes of the hexagonal wurtzite structure. TEM analysis confirmed the nano dimension of the synthesized zinc oxide nanoparticles. The presence of nano zinc oxide over cellulose fibres was evident from the SEM-EDS experiments. FTIR and TGA studies exhibited their effective bonding interaction. The tensile stress-strain curves data indicated the feasibility of the fabricated fibres for longer duration utility without any significant damage or breakage. The antibacterial studies against Escherichia coli revealed the excellent bacterial devastation property. Further, it was observed that when all the parameters remained constant, the variation of sodium alginate concentration showed impact in devastating the E. coli. In overall, the fabricated nano zinc oxide-sodium alginate cellulose fibres can be effectively utilized as antibacterial fibres for biomedical applications. PMID:26453887

  16. Electrochemical synthesis and characterization of zinc carbonate and zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Pourmortazavi, Seied Mahdi; Marashianpour, Zahra; Karimi, Meisam Sadeghpour; Mohammad-Zadeh, Mohammad

    2015-11-01

    Zinc oxide and its precursor i.e., zinc carbonate is widely utilized in various fields of industry, especially in solar energy conversion, optical, and inorganic pigments. In this work, a facile and clean electrodeposition method was utilized for the synthesis of zinc carbonate nanoparticles. Also, zinc oxide nanoparticles were produced by calcination of the prepared zinc carbonate powder. Zinc carbonate nanoparticles with different sizes were electrodeposited by electrolysis of a zinc plate as anode in the solution of sodium carbonate. It was found that the particle size of zinc carbonate might be tuned by process parameters, i.e., electrolysis voltage, carbonate ion concentration, solvent composition and stirring rate of the electrolyte solution. An orthogonal array design was utilized to identify the optimum experimental conditions. The experimental results showed that the minimum size of the electrodeposited ZnCO3 particles is about 24 nm whereas the maximum particle size is around 40 nm. The TG-DSC studies of the nanoparticles indicated that the main thermal degradation of ZnCO3 occurs in two steps over the temperature ranges of 150-250 and 350-400 °C. The electrosynthesized ZnCO3 nanoparticles were calcined at the temperature of 600 °C to prepare ZnO nanoparticles. The prepared ZnCO3 and ZnO nanoparticles were characterized by SEM, X-ray diffraction (XRD), and FT-IR techniques.

  17. Biomedical Applications of Zinc Oxide Nanomaterials

    PubMed Central

    Zhang, Yin; Nayak, Tapas R.; Hong, Hao; Cai, Weibo

    2013-01-01

    Nanotechnology has witnessed tremendous advancement over the last several decades. Zinc oxide (ZnO), which can exhibit a wide variety of nanostructures, possesses unique semiconducting, optical, and piezoelectric properties hence has been investigated for a wide variety of applications. One of the most important features of ZnO nanomaterials is low toxicity and biodegradability. Zn2+ is an indispensable trace element for adults (~10 mg of Zn2+ per day is recommended) and it is involved in various aspects of metabolism. Chemically, the surface of ZnO is rich in -OH groups, which can be readily functionalized by various surface decorating molecules. In this review article, we summarized the current status of the use of ZnO nanomaterials for biomedical applications, such as biomedical imaging (which includes fluorescence, magnetic resonance, positron emission tomography, as well as dual-modality imaging), drug delivery, gene delivery, and biosensing of a wide array of molecules of interest. Research in biomedical applications of ZnO nanomaterials will continue to flourish over the next decade, and much research effort will be needed to develop biocompatible/biodegradable ZnO nanoplatforms for potential clinical translation. PMID:24206130

  18. The solubility of gallium oxide in vapor and two-phase fluid filtration in hydrothermal systems

    NASA Astrophysics Data System (ADS)

    Bychkov, Andrew; Matveeva, Svetlana; Nekrasov, Stanislav

    2010-05-01

    The solubility of gallium and aluminum oxides in gas phase in the system Ga2O3 (Al2O3)-HCl-H2O was studied at 150-350°C and pressure up to saturated vapor. The concentration of gallium increases with the increasing of HCl pressure. The formulae of gallium gaseous specie was determined as GaOHCl2. The constant of gallium oxide solubility reaction was calculated at 150, 200, 250, 300 and 350°C. The concentration of aluminum in gas phase is insignificant in the same conditions. The possibility of gallium transportation in gas phase with small quantity of Al allow to divide this elements in hydrothermal processes with gas phase. The Ga/Al ratio in muscovite can be used as the indicator of gas phase separation and condensation. This indicator was not considered in the geochemical literature earlier. The separation of gas and liquid phases was determined in Akchatau (Kazahstan) and Spokoinoe (Russia) greisen W deposit by carbon isotope fractionation of carbon dioxide in fluid inclusion. The important feature of both ore mains is heterogenization and boiling of ore-forming fluids. Greisen ore bodies are formed as a result of strongly focused solution flow in the T-P gradient fields. It is possible to divide ore bodies of Akchatau in two types: muscovite and quartz. Muscovite type veins are thin and have small metasyntactic zone. Quartz type veins are localized in fault with large vertical extent (500 m) and content the large quantity of wolframite. These veins formed in condition of significant pressure decreasing from 2.5 to 0.5 kbar with fluid boiling. Gas and liquid phase separation specifies the vertical zonality of quartz type veins. The gas phase with the high gallium concentration is separated from a flow of liquid phase. Liquid phase react with the granites forming greisen metasomatites. Condensation of the gas phase in upper parts of massive produces the increasing of Ga/Al ratio in muscovite 3-5 times more, then in granites and bottom part of vein (from 2×10

  19. Chemiluminescence spectra of the reaction products of gallium, indium and thallium vapors with nitrous oxide

    SciTech Connect

    Eliseev, M.V.; Koryazhkin, V.A.; Mal'tsev, A.A.; Popov, A.D.

    1983-03-01

    The search for active media for chemical lasers generating in the visible range has led to numerous investigations of the chemiluminescence of oxidation reactions of metals in the gas phase. In the present work, the chemiluminescence spectra of flames of gallium, indium, and thallium vapors in nitrous oxide in an argon flux are investigated. The chemiluminescence intensity was studied as a function of the total pressure in the reactor, the rate of admission of the nitrous oxide, the rate of admission of argon and the cell temperature. The oxide molecules formed are in vibrational levels of the electronic ground state that are close to the dissociational limit. As a result of collisions with argon atoms, the oxide molecule passes to the excited electronic state. The thermal effects of the above reaction and the equal dissociational energies of the oxide molecules are sufficient for excitation of the vibrational levels 10 and 2 of the excited electronic states of the GaO and InO molecules, respectively. Atomic chemiluminescence is evidently a consequence of collision of metal oxide molecules with metal atoms in the electronic ground states.

  20. Genotoxic effects of zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Heim, Julia; Felder, Eva; Tahir, Muhammad Nawaz; Kaltbeitzel, Anke; Heinrich, Ulf Ruediger; Brochhausen, Christoph; Mailänder, Volker; Tremel, Wolfgang; Brieger, Juergen

    2015-05-01

    The potential toxicity of nanoparticles has currently provoked public and scientific discussions, and attempts to develop generally accepted handling procedures for nanoparticles are under way. The investigation of the impact of nanoparticles on human health is overdue and reliable test systems accounting for the special properties of nanomaterials must be developed. Nanoparticular zinc oxide (ZnO) may be internalised through ambient air or the topical application of cosmetics, only to name a few, with unpredictable health effects. Therefore, we analysed the determinants of ZnO nanoparticle (NP) genotoxicity. ZnO NPs (15-18 nm in diameter) were investigated at concentrations of 0.1, 10 and 100 μg mL-1 using the cell line A549. Internalised NPs were only infrequently detectable by TEM, but strongly increased Zn2+ levels in the cytoplasm and even more in the nuclear fraction, as measured by atom absorption spectroscopy, indicative of an internalised zinc and nuclear accumulation. We observed a time and dosage dependent reduction of cellular viability after ZnO NP exposure. ZnCl2 exposure to cells induced similar impairments of cellular viability. Complexation of Zn2+ with diethylene triamine pentaacetic acid (DTPA) resulted in the loss of toxicity of NPs, indicating the relevant role of Zn2+ for ZnO NP toxicity. Foci analyses showed the induction of DNA double strand breaks (DSBs) by ZnO NPs and increased intracellular reactive oxygen species (ROS) levels. Treatment of the cells with the ROS scavenger N-acetyl-l-cysteine (NAC) resulted in strongly decreased intracellular ROS levels and reduced DNA damage. However, a slow increase of ROS after ZnO NP exposure and reduced but not quashed DSBs after NAC-treatment suggest that Zn2+ may exert genotoxic activities without the necessity of preceding ROS-induction. Our data indicate that ZnO NP toxicity is a result of cellular Zn2+ intake. Subsequently increased ROS-levels cause DNA damage. However, we found evidence for

  1. Genotoxic effects of zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Heim, Julia; Felder, Eva; Tahir, Muhammad Nawaz; Kaltbeitzel, Anke; Heinrich, Ulf Ruediger; Brochhausen, Christoph; Mailänder, Volker; Tremel, Wolfgang; Brieger, Juergen

    2015-05-01

    The potential toxicity of nanoparticles has currently provoked public and scientific discussions, and attempts to develop generally accepted handling procedures for nanoparticles are under way. The investigation of the impact of nanoparticles on human health is overdue and reliable test systems accounting for the special properties of nanomaterials must be developed. Nanoparticular zinc oxide (ZnO) may be internalised through ambient air or the topical application of cosmetics, only to name a few, with unpredictable health effects. Therefore, we analysed the determinants of ZnO nanoparticle (NP) genotoxicity. ZnO NPs (15-18 nm in diameter) were investigated at concentrations of 0.1, 10 and 100 μg mL-1 using the cell line A549. Internalised NPs were only infrequently detectable by TEM, but strongly increased Zn2+ levels in the cytoplasm and even more in the nuclear fraction, as measured by atom absorption spectroscopy, indicative of an internalised zinc and nuclear accumulation. We observed a time and dosage dependent reduction of cellular viability after ZnO NP exposure. ZnCl2 exposure to cells induced similar impairments of cellular viability. Complexation of Zn2+ with diethylene triamine pentaacetic acid (DTPA) resulted in the loss of toxicity of NPs, indicating the relevant role of Zn2+ for ZnO NP toxicity. Foci analyses showed the induction of DNA double strand breaks (DSBs) by ZnO NPs and increased intracellular reactive oxygen species (ROS) levels. Treatment of the cells with the ROS scavenger N-acetyl-l-cysteine (NAC) resulted in strongly decreased intracellular ROS levels and reduced DNA damage. However, a slow increase of ROS after ZnO NP exposure and reduced but not quashed DSBs after NAC-treatment suggest that Zn2+ may exert genotoxic activities without the necessity of preceding ROS-induction. Our data indicate that ZnO NP toxicity is a result of cellular Zn2+ intake. Subsequently increased ROS-levels cause DNA damage. However, we found evidence for

  2. Synthetic silver oxide and mercury-free zinc electrodes for silver-zinc reserve batteries

    NASA Astrophysics Data System (ADS)

    Smith, David F.; Gucinski, James A.

    Reserve activated silver oxide-zinc cells were constructed with synthetic silver oxide (Ag 2O) electrodes with Pb-treated zinc electrodes produced by a non-electrolytic process. The cells were tested before and after thermally accelerated aging. At discharge rates up to 80 mA cm -2, the discharge was limited by the Ag 2O electrode, with a coulombic efficiency between 89-99%. At higher rates, the cells are apparently zinc-limited. Test cells were artificially aged at 90°C for 19 h and discharged at 21°C at 80 mA cm -2. No capacity loss was measured, but a delayed activation rise time was noted (192 ms fresh vs. 567 ms aged). The delay is thought to be caused by zinc passivation due to the outgassing of cell materials.

  3. Thermodynamics and kinetics of extracting zinc from zinc oxide ore by the ammonium sulfate roasting method

    NASA Astrophysics Data System (ADS)

    Sun, Yi; Shen, Xiao-yi; Zhai, Yu-chun

    2015-05-01

    Thermodynamic analyses and kinetic studies were performed on zinc oxide ore treatment by (NH4)2SO4 roasting technology. The results show that it is theoretically feasible to realize a roasting reaction between the zinc oxide ore and (NH4)2SO4 in a temperature range of 573-723 K. The effects of reaction temperature and particle size on the extraction rate of zinc were also examined. It is found that a surface chemical reaction is the rate-controlling step in roasting kinetics. The calculated activation energy of this process is about 45.57 kJ/mol, and the kinetic model can be expressed as follows: 1 - (1 - α)1/3 = 30.85 exp(-45.57/ RT)· t. An extraction ratio of zinc as high as 92% could be achieved under the optimum conditions.

  4. Morphological Control of Metal Oxide-Doped Zinc Oxide and Application to Cosmetics

    NASA Astrophysics Data System (ADS)

    Goto, Takehiro; Yin, Shu; Sato, Tsugio; Tanaka, Takumi

    2012-06-01

    Zinc oxide shows excellent transparency and ultraviolet radiation shielding ability, and is used for various cosmetics.1-3 However, it possesses high catalytic activity and lower dispersibility. Therefore, spherical particles of zinc oxide have been synthesized by soft solution reaction using zinc nitrate, ethylene glycol, sodium hydroxide and triethanolamine as starting materials. After dissolving these compounds in water, the solution was heated at 90°C for 1 h to form almost mono-dispersed spherical zinc oxide particles. The particle size changed depending on zinc ion concentration, ethylene glycol concentration and so on. Furthermore, with doping some metal ions, the phtocatalytic activity could be decreased. The obtained monodispersed metal ion-doped spherical zinc oxides showed excellent UV shielding ability and low photocatalytic activity. Therefore, they are expected to be used as cosmetics ingredients.

  5. Zinc-oxide-based nanostructured materials for heterostructure solar cells

    SciTech Connect

    Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A. Somov, P. A.; Terukov, E. I.

    2015-10-15

    Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics.

  6. Leaching of oxidic zinc materials with chlorine and chlorine hydrate

    NASA Astrophysics Data System (ADS)

    Thomas, B. K.; Fray, D. J.

    1981-06-01

    Low grade zinc ores and residues were leached in chlorine water and chlorine hydrate water mixtures. It was found that the rate of leaching Adrar ore and Electric Arc Furnace dust obeyed a shrinking core diffusion model, whereas, the rate of leaching of Turkish ore appeared to be controlled by a surface reaction. In all cases, lead leached with the zinc but the iron oxides remained virtually undissolved.

  7. Plasma in-liquid method for reduction of zinc oxide in zinc nanoparticle synthesis

    NASA Astrophysics Data System (ADS)

    Amaliyah, Novriany; Mukasa, Shinobu; Nomura, Shinfuku; Toyota, Hiromichi; Kitamae, Tomohide

    2015-02-01

    Metal air-batteries with high-energy density are expected to be increasingly applied in electric vehicles. This will require a method of recycling air batteries, and reduction of metal oxide by generating plasma in liquid has been proposed as a possible method. Microwave-induced plasma is generated in ethanol as a reducing agent in which zinc oxide is dispersed. Analysis by energy-dispersive x-ray spectrometry (EDS) and x-ray diffraction (XRD) reveals the reduction of zinc oxide. According to images by transmission electron microscopy (TEM), cubic and hexagonal metallic zinc particles are formed in sizes of 30 to 200 nm. Additionally, spherical fiber flocculates approximately 180 nm in diameter are present.

  8. Group-IV Impurity Defect Levels in beta-Gallium Oxide

    NASA Astrophysics Data System (ADS)

    Badescu, Stefan

    2015-03-01

    Beta-Gallium Oxide (β-Ga2O3) is a wide-bandgap semiconductor with a significant potential as a native substrate for electronic devices. One avenue for tuning its carrier concentration and electronic properties is doping with group-IV impurity atoms. This work presents a first-principles understanding of the effects of C, Si, Ge and Sn dopants at Ga sites. C is found to act like a bistable center whereas the other dopants preserve the symmetry of the Ga site. Hybrid functionals are used to describe accurately the effects that occur mainly in the conduction band. A Brillouin zone unfolding is used that enables a direct comparison to possible spectroscopy experiments. We delineate the effects on bandgap modulation induced by charge density on the one hand, and by conduction band resonances and effective masses on the other hand.

  9. An Evaluation of Zinc Oxide Photovoltaic Devices

    NASA Astrophysics Data System (ADS)

    Wang, Jun

    Zinc oxide (ZnO) is attractive for photovoltaic applications due to its conductivity when doped with aluminum and transparency to the visible range of sunlight, i.e. minimized optical and electrical loss. Zinc oxide can form a stable n-n isotype heterojunction with silicon, which is comparable with conventional p-n junctions. The performance of such a junction heavily relies on the Fermi energy tuning of ZnO by Al doping. As an n-type dopant to ZnO, Al greatly improves the conductivity of ZnO. Moreover, Al-doped ZnO (AZO) is relatively abundant and cheap compared to other transparent conductive oxides (TCO), so that potentially the cost of electricity generation ($/KW) can be decreased. In order to boost the poor open circuit voltages resulted from the structures such as ITO/n-Si and AZO/n-Si, a thin 40 nm AZO film was introduced in our design as a buffer layer between the emitter and base. Our goal is to discover what Al content in the buffer layer achieves the optimum performance. Aluminum doped ZnO films were grown by a co-sputtering method which was a combination of RF sputtered ZnO with a fixed power of 300 W and DC sputtered Al with varied powers of 15-40 W. The Al content in AZO increases with increasing power used in Al sputtering. In this research, two types of heterojunction solar cells, ITO/AZO/n-Si and AZO/AZO/n-Si, were fabricated, analyzed and compared. The middle layer of AZO is the buffer layer which has varied Al doping and plays a key role in improving open circuit voltage. For the structure AZO/AZO/n-Si, the top emitter AZO layer has a fixed Al doping of 6.12 wt% at which AZO demonstrates the highest conductivity. With Al doping of the buffer AZO layer ranging from 0-7 wt.%, 6.34 wt.% of Al doping yields the best performance for both types of solar cell structures. At its best performance, ITO/AZO/n-Si demonstrates an open circuit voltage (Voc) of 0.42 V, a short circuit current density (J sc) of 26.0 mA/cm2, and a conversion efficiency of 5

  10. Zinc Oxide Nanoparticles for Revolutionizing Agriculture: Synthesis and Applications

    PubMed Central

    Sabir, Sidra; Arshad, Muhammad

    2014-01-01

    Nanotechnology is the most innovative field of 21st century. Extensive research is going on for commercializing nanoproducts throughout the world. Due to their unique properties, nanoparticles have gained considerable importance compared to bulk counterparts. Among other metal nanoparticles, zinc oxide nanoparticles are very much important due to their utilization in gas sensors, biosensors, cosmetics, drug-delivery systems, and so forth. Zinc oxide nanoparticles (ZnO NPs) also have remarkable optical, physical, and antimicrobial properties and therefore have great potential to enhance agriculture. As far as method of formation is concerned, ZnO NPs can be synthesized by several chemical methods such as precipitation method, vapor transport method, and hydrothermal process. The biogenic synthesis of ZnO NPs by using different plant extracts is also common nowadays. This green synthesis is quite safe and ecofriendly compared to chemical synthesis. This paper elaborates the synthesis, properties, and applications of zinc oxide nanoparticles. PMID:25436235

  11. Crystalline state and acoustic properties of zinc oxide films

    SciTech Connect

    Kal'naya, G.I.; Pryadko, I.F.; Yarovoi, Yu.A.

    1988-08-01

    We study the effect of the crystalline state of zinc oxide films, prepared by magnetron sputtering, on the efficiency of SAW transducers based on the layered system textured ZnO film-interdigital transducer (IDT)-fused quartz substrate. The crystalline perfection of the ZnO films was studied by the x-ray method using a DRON-2.0 diffractometer. The acoustic properties of the layered system fused quartz substrate-IDT-zinc oxide film were evaluated based on the squared electromechanical coupling constant K/sup 2/ for strip filters. It was found that K/sup 2/ depends on the magnitude of the mechanical stresses. When zinc oxide films are deposited by the method of magnetron deposition on fused quartz substrates, depending on the process conditions limitations can arise on the rate of deposition owing to mechanical stresses, which significantly degrade the efficiency of SAW transducers based on them, in the ZnO films.

  12. Zinc oxide nanoparticles for revolutionizing agriculture: synthesis and applications.

    PubMed

    Sabir, Sidra; Arshad, Muhammad; Chaudhari, Sunbal Khalil

    2014-01-01

    Nanotechnology is the most innovative field of 21st century. Extensive research is going on for commercializing nanoproducts throughout the world. Due to their unique properties, nanoparticles have gained considerable importance compared to bulk counterparts. Among other metal nanoparticles, zinc oxide nanoparticles are very much important due to their utilization in gas sensors, biosensors, cosmetics, drug-delivery systems, and so forth. Zinc oxide nanoparticles (ZnO NPs) also have remarkable optical, physical, and antimicrobial properties and therefore have great potential to enhance agriculture. As far as method of formation is concerned, ZnO NPs can be synthesized by several chemical methods such as precipitation method, vapor transport method, and hydrothermal process. The biogenic synthesis of ZnO NPs by using different plant extracts is also common nowadays. This green synthesis is quite safe and ecofriendly compared to chemical synthesis. This paper elaborates the synthesis, properties, and applications of zinc oxide nanoparticles. PMID:25436235

  13. Heterostructured nanohybrid of zinc oxide-montmorillonite clay.

    PubMed

    Hur, Su Gil; Kim, Tae Woo; Hwang, Seong-Ju; Hwang, Sung-Ho; Yang, Jae Hun; Choy, Jin-Ho

    2006-02-01

    We have synthesized heterostructured zinc oxide-aluminosilicate nanohybrids through a hydrothermal reaction between the colloidal suspension of exfoliated montmorillonite nanosheets and the sol solution of zinc acetate. According to X-ray diffraction, N2 adsorption-desorption isotherm, and field emission-scanning electron microscopic analyses, it was found that the intercalation of zinc oxide nanoparticles expands the basal spacing of the host montmorillonite clay, and the crystallites of the nanohybrids are assembled to form a house-of-cards structure. From UV-vis spectroscopic investigation, it becomes certain that calcined nanohybrid contains two kinds of the zinc oxide species in the interlayer space of host lattice and in mesopores formed by the house-of-cards type stacking of the crystallites. Zn K-edge X-ray absorption near-edge structure/extended X-ray absorption fine structure analyses clearly demonstrate that guest species in the nanohybrids exist as nanocrystalline zinc oxides with wurzite-type structure. PMID:16471722

  14. Analysis of cellular responses of macrophages to zinc ions and zinc oxide nanoparticles: a combined targeted and proteomic approach

    NASA Astrophysics Data System (ADS)

    Triboulet, Sarah; Aude-Garcia, Catherine; Armand, Lucie; Gerdil, Adèle; Diemer, Hélène; Proamer, Fabienne; Collin-Faure, Véronique; Habert, Aurélie; Strub, Jean-Marc; Hanau, Daniel; Herlin, Nathalie; Carrière, Marie; van Dorsselaer, Alain; Rabilloud, Thierry

    2014-05-01

    Two different zinc oxide nanoparticles, as well as zinc ions, are used to study the cellular responses of the RAW 264 macrophage cell line. A proteomic screen is used to provide a wide view of the molecular effects of zinc, and the most prominent results are cross-validated by targeted studies. Furthermore, the alteration of important macrophage functions (e.g. phagocytosis) by zinc is also investigated. The intracellular dissolution/uptake of zinc is also studied to further characterize zinc toxicity. Zinc oxide nanoparticles dissolve readily in the cells, leading to high intracellular zinc concentrations, mostly as protein-bound zinc. The proteomic screen reveals a rather weak response in the oxidative stress response pathway, but a strong response both in the central metabolism and in the proteasomal protein degradation pathway. Targeted experiments confirm that carbohydrate catabolism and proteasome are critical determinants of sensitivity to zinc, which also induces DNA damage. Conversely, glutathione levels and phagocytosis appear unaffected at moderately toxic zinc concentrations.Two different zinc oxide nanoparticles, as well as zinc ions, are used to study the cellular responses of the RAW 264 macrophage cell line. A proteomic screen is used to provide a wide view of the molecular effects of zinc, and the most prominent results are cross-validated by targeted studies. Furthermore, the alteration of important macrophage functions (e.g. phagocytosis) by zinc is also investigated. The intracellular dissolution/uptake of zinc is also studied to further characterize zinc toxicity. Zinc oxide nanoparticles dissolve readily in the cells, leading to high intracellular zinc concentrations, mostly as protein-bound zinc. The proteomic screen reveals a rather weak response in the oxidative stress response pathway, but a strong response both in the central metabolism and in the proteasomal protein degradation pathway. Targeted experiments confirm that carbohydrate

  15. Thin zinc oxide and cuprous oxide films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Jeong, Seongho

    Metal oxide semiconductors and heterojunctions made from thin films of metal oxide semiconductors have broad range of functional properties and high potential in optical, electrical and magnetic devices such as light emitting diodes, spintronic devices and solar cells. Among the oxide semiconductors, zinc oxide (ZnO) and cuprous oxide (Cu2O) are attractive because they are inexpensive, abundant and nontoxic. As synthesized ZnO is usually an intrinsic n - type semiconductor with wide band gap (3.4 eV) and can be used as the transparent conducting window layer in solar cells. As synthesized Cu2O is usually a p - type semiconductor with a band gap of 2.17 eV and has been considered as a potential material for the light absorbing layer in solar cells. I used various techniques including metal organic chemical vapor deposition, magnetron sputtering and atomic layer deposition to grow thin films of ZnO and Cu2O and fabricated Cu2O/ZnO heterojunctions. I specifically investigated the optical and electrical properties of Cu 2O thin films deposited on ZnO by MOCVD and showed that Cu2O thin films grow as single phase with [110] axis aligned perpendicular to the ZnO surface which is (0001) plane and with in-plane rotational alignment due to (220) Cu2O || (0002)ZnO; [001]Cu2O || [12¯10]ZnO epitaxy. Moreover, I fabricated solar cells based on these Cu2O/ZnO heterojunctions and characterized them. Electrical characterization of these solar cells as a function of temperature between 100 K and 300 K under illumination revealed that interface recombination and tunneling at the interface are the factors that limit the solar cell performance. To date solar cells based on Cu2O/ZnO heterojunctions had low open circuit voltages (~ 0.3V) even though the expected value is around 1V. I achieved open circuit voltages approaching 1V at low temperature (~ 100 K) and showed that if interfacial recombination is reduced these cells can achieve their predicted potential.

  16. Exoemission accompanying the decomposition of methanol on zinc oxide

    NASA Astrophysics Data System (ADS)

    Krylova, I. V.

    2008-09-01

    The electronic phenomena accompanying the adsorption and dehydrogenation of methanol on zinc oxide were studied using the method of exoemission of negative charges. Postemission excited from ZnO by an electron beam was found to be suppressed by the adsorption of methanol vapor, which exhibited electron acceptor properties. Subsequent heating to temperatures close to the temperature of the beginning of methanol decomposition increased the intensity of exoemission, which was evidence of the participation of emission centers (Oδ-) in dehydrogenation. A possible mechanism of methanol decomposition with the participation of surface V s hole centers (Oδ-) of zinc oxide was suggested.

  17. Hydrogen Reduction of Zinc and Iron Oxides Containing Mixtures

    NASA Astrophysics Data System (ADS)

    de Siqueira, Rogério Navarro C.; de Albuquerque Brocchi, Eduardo; de Oliveira, Pamela Fernandes; Motta, Marcelo Senna

    2013-10-01

    Zinc is a metal of significant technological importance and its production from secondary sources has motivated the development of alternative processes, such as the chemical treatment of electrical arc furnace (EAF) dust. Currently, the extraction of zinc from the mentioned residue using a carbon-containing reducing agent is in the process of being established commercially and technically. In the current study, the possibility of reducing zinc from an EAF dust sample through a H2 constant flux in a horizontal oven is studied. The reduction of a synthetic oxide mixture of analogous composition is also investigated. The results indicated that the reduction process is thermodynamically viable for temperatures higher than 1123 K (850 °C), and all zinc metal produced is transferred to the gas stream, enabling its complete separation from iron. The same reaction in the presence of zinc crystals was considered for synthesizing FeZn alloys. However, for the experimental conditions employed, although ZnO reduction was indeed thermodynamically hindered because of the presence of zinc crystals (the metal's partial pressure was enhanced), the zinc metal's escape within the gaseous phase could not be effectively avoided.

  18. Effect of modifying agents on the hydrophobicity and yield of zinc borate synthesized by zinc oxide

    NASA Astrophysics Data System (ADS)

    Acarali, Nil Baran; Bardakci, Melek; Tugrul, Nurcan; Derun, Emek Moroydor; Piskin, Sabriye

    2013-06-01

    The aim of this study was to synthesize zinc borate using zinc oxide, reference boric acid, and reference zinc borate (reference ZB) as the seed, and to investigate the effects of modifying agents and reaction parameters on the hydrophobicity and yield, respectively. The reaction parameters include reaction time (1-5 h), reactant ratio (H3BO3/ZnO by mass: 2-5), seed ratio (seed crystal/(H3BO3+ZnO) by mass: 0-2wt%), reaction temperature (50-120°C), cooling temperature (10-80°C), and stirring rate (400-700 r/min); the modifying agents involve propylene glycol (PG, 0-6wt%), kerosene (1wt%-6wt%), and oleic acid (OA, 1wt%-6wt%) with solvents (isopropyl alcohol (IPA), ethanol, and methanol). The results of reaction yield obtained from either magnetically or mechanically stirred systems were compared. Zinc borate produced was characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), and contact angle tests to identify the hydrophobicity. In conclusion, zinc borate is synthesized successfully under the optimized reaction conditions, and the different modifying agents with various solvents affect the hydrophobicity of zinc borate.

  19. Nanostructured zinc oxide thin film by simple vapor transport deposition

    NASA Astrophysics Data System (ADS)

    Athma, P. V.; Martinez, Arturo I.; Johns, N.; Safeera, T. A.; Reshmi, R.; Anila, E. I.

    2015-09-01

    Zinc oxide (ZnO) nanostructures find applications in optoelectronic devices, photo voltaic displays and sensors. In this work zinc oxide nanostructures in different forms like nanorods, tripods and tetrapods have been synthesized by thermal evaporation of zinc metal and subsequent deposition on a glass substrate by vapor transport in the presence of oxygen. It is a comparatively simpler and environment friendly technique for the preparation of thin films. The structure, morphology and optical properties of the synthesized nanostructured thin film were characterized in detail by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and photoluminescence (PL). The film exhibited bluish white emission with Commission International d'Eclairage (CIE) coordinates x = 0.22, y = 0.31.

  20. Size effects in the thermal conductivity of gallium oxide (β-Ga2O3) films grown via open-atmosphere annealing of gallium nitride

    NASA Astrophysics Data System (ADS)

    Szwejkowski, Chester J.; Creange, Nicole C.; Sun, Kai; Giri, Ashutosh; Donovan, Brian F.; Constantin, Costel; Hopkins, Patrick E.

    2015-02-01

    Gallium nitride (GaN) is a widely used semiconductor for high frequency and high power devices due to of its unique electrical properties: a wide band gap, high breakdown field, and high electron mobility. However, thermal management has become a limiting factor regarding efficiency, lifetime, and advancement of GaN devices and GaN-based applications. In this work, we study the thermal conductivity of beta-phase gallium oxide (β-Ga2O3) thin films, a component of typical gate oxides used in such devices. We use time domain thermoreflectance to measure the thermal conductivity of a variety of polycrystalline β-Ga2O3 films of different thicknesses grown via open atmosphere annealing of the surfaces of GaN films on sapphire substrates. We show that the measured effective thermal conductivity of these β-Ga2O3 films can span 1.5 orders of magnitude, increasing with an increased film thickness, which is indicative of the relatively large intrinsic thermal conductivity of the β-Ga2O3 grown via this technique (8.8 ± 3.4 W m-1 K-1) and large mean free paths compared to typical gate dielectrics commonly used in GaN device contacts. By conducting time domain thermoreflectance (TDTR) measurements with different metal transducers (Al, Au, and Au with a Ti wetting layer), we attribute this variation in effective thermal conductivity to a combination of size effects in the β-Ga2O3 film resulting from phonon scattering at the β-Ga2O3/GaN interface and thermal transport across the β-Ga2O3/GaN interface. The measured thermal properties of open atmosphere-grown β-Ga2O3 and its interface with GaN set the stage for thermal engineering of gate contacts in high frequency GaN-based devices.

  1. Resputtering of zinc oxide films prepared by radical assisted sputtering

    SciTech Connect

    Song Qiuming; Jiang Yousong; Song Yizhou

    2009-02-15

    Sputtering losses of zinc oxide films prepared by radical assisted sputtering were studied. It was found that the sputtering loss can be very severe in oxygenous sputtering processes of zinc oxide films. In general, resputtering caused by negative oxygen ions dominates the sputtering loss, while diffuse deposition plays a minor role. Resputtering is strongly correlated with the sputtering threshold energy of the deposited films and the concentration of O{sup -} in the sputtering zone. The balance between the oxygen concentration in the sputtering zone and the oxidation degree of the growing films depends on the sputtering rate. Our research suggests that a lower oxygen concentration in the sputtering zone and a higher oxidation degree of the growing films are favorable for reducing the resputtering losses. The sputtering loss mechanisms discussed in this work are also helpful for understanding the deposition processes of other magnetron sputtering systems.

  2. Investigation of Optical Properties of Zinc Oxide Photodetector

    NASA Astrophysics Data System (ADS)

    Chism, Tyler

    UV photodetection devices have many important applications for uses in biological detection, gas sensing, weaponry detection, fire detection, chemical analysis, and many others. Today's photodetectors often utilize semiconductors such as GaAs to achieve high responsivity and sensitivity. Zinc oxide, unlike many other semiconductors, is cheap, abundant, non-toxic, and easy to grow different morphologies at the micro and nano scale. With the proliferation of these devices also comes the impending need to further study optics and photonics in relation to phononics and plasmonics, and the general principles underlying the interaction of photons with solid state matter and, specifically, semiconductors. For this research a metal-semiconductor-metal UV photodetector has been fabricated by using a quartz substrate on top of which was deposited micropatterned gold in an interdigitated electrode design. On this, sparsely coated zinc oxide nano trees were hydrothermally grown. The UV photodetection device showed promise for detection applications, especially because zinc oxide is also very thermally stable, a quality which is highly sought after in today's UV photodetectors. Furthermore, the newly synthesized photodetector was used to investigate optical properties and how they respond to different stimuli. It was discovered that the photons transmitted through the sparsely coated zinc oxide nano trees decreased as the voltage across the device increased. This research is aimed at better understanding photons interaction with matter and also to open the door for new devices with tunable optical properties such as transmission.

  3. Interfacial electron transfer dynamics of photosensitized zinc oxide nanoclusters

    SciTech Connect

    Murakoshi, Kei; Yanagida, Shozo; Capel, M.

    1997-06-01

    The authors have prepared and characterized photosensitized zinc oxide (ZnO) nanoclusters, dispersed in methanol, using carboxylated coumarin dyes for surface adsorption. Femtosecond time-resolved emission spectroscopy allows the authors to measure the photo-induced charge carrier injection rate constant from the adsorbed photosensitizer to the n-type semiconductor nanocluster. These results are compared with other photosensitized semiconductors.

  4. Chemical vapor deposition of fluorine-doped zinc oxide

    DOEpatents

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  5. Process for fabricating doped zinc oxide microsphere gel

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1991-01-01

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel.

  6. Process for fabricating doped zinc oxide microsphere gel

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1991-11-05

    Disclosed are a new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

  7. Application of zinc oxide quantum dots in food safety

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Zinc oxide quantum dots (ZnO QDs) are nanoparticles of purified powdered ZnO. The ZnO QDs were directly added into liquid foods or coated on the surface of glass jars using polylactic acid (PLA) as a carrier. The antimicrobial activities of ZnO QDs against Listeria monocytogenes, Salmonella Enteriti...

  8. Potassium silicate-zinc oxide solution for metal finishes

    NASA Technical Reports Server (NTRS)

    Schutt, J. B.

    1970-01-01

    Examples of zinc dust formulations, which are not subject to cracking or crazing, are fire retardant, and have high adhesive qualities, are listed. The potassium silicate in these formulations has mol ratios of dissolved silica potassium oxide in the range 4.8 to 1 - 5.3 to 1.

  9. Synthesis of substituted β-diketiminate gallium hydrides via oxidative addition of H-O bonds.

    PubMed

    Herappe-Mejía, Eduardo; Trujillo-Hernández, Karla; Carlos Garduño-Jiménez, Juan; Cortés-Guzmán, Fernando; Martínez-Otero, Diego; Jancik, Vojtech

    2015-10-14

    Oxidative addition of LGa into the OH bonds from HCCCH2OH, Ph2Si(OH)2, (nBuO)2P(O)(OH) and 4-MeC6H4S(O)2(OH) results in the formation of four compounds of the general formula LGa(H)(O-X). The correlation of the Ga-O bond length and the strength of the Ga-H bond depending on the acidity of the OH group in the starting materials has been demonstrated. The molecular structures of all four compounds have been determined using single crystal X-ray diffraction experiments. DFT calculations were performed on the reacting complex of LGa with propargyl alcohol and show an OHGa hydrogen bond as the first interaction between the reagents. This reacting complex changes into a D-A complex where the oxygen atom of the propargyl alcohol coordinates to the gallium atom and in a concerted reaction the oxidative addition product is formed. PMID:26351779

  10. Analysis of cellular responses of macrophages to zinc ions and zinc oxide nanoparticles: a combined targeted and proteomic approach.

    PubMed

    Triboulet, Sarah; Aude-Garcia, Catherine; Armand, Lucie; Gerdil, Adèle; Diemer, Hélène; Proamer, Fabienne; Collin-Faure, Véronique; Habert, Aurélie; Strub, Jean-Marc; Hanau, Daniel; Herlin, Nathalie; Carrière, Marie; Van Dorsselaer, Alain; Rabilloud, Thierry

    2014-06-01

    Two different zinc oxide nanoparticles, as well as zinc ions, are used to study the cellular responses of the RAW 264 macrophage cell line. A proteomic screen is used to provide a wide view of the molecular effects of zinc, and the most prominent results are cross-validated by targeted studies. Furthermore, the alteration of important macrophage functions (e.g. phagocytosis) by zinc is also investigated. The intracellular dissolution/uptake of zinc is also studied to further characterize zinc toxicity. Zinc oxide nanoparticles dissolve readily in the cells, leading to high intracellular zinc concentrations, mostly as protein-bound zinc. The proteomic screen reveals a rather weak response in the oxidative stress response pathway, but a strong response both in the central metabolism and in the proteasomal protein degradation pathway. Targeted experiments confirm that carbohydrate catabolism and proteasome are critical determinants of sensitivity to zinc, which also induces DNA damage. Conversely, glutathione levels and phagocytosis appear unaffected at moderately toxic zinc concentrations. PMID:24788578