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Sample records for gating memory related

  1. Multiple gates on working memory

    PubMed Central

    Chatham, Christopher H; Badre, David

    2015-01-01

    The contexts for action may be only transiently visible, accessible, and relevant. The corticobasal ganglia (BG) circuit addresses these demands by allowing the right motor plans to drive action at the right times, via a BG-mediated gate on motor representations. A long-standing hypothesis posits these same circuits are replicated in more rostral brain regions to support gating of cognitive representations. Key evidence now supports the prediction that BG can act as a gate on the input to working memory, as a gate on its output, and as a means of reallocating working memory representations rendered irrelevant by recent events. These discoveries validate key tenets of many computational models, circumscribe motor and cognitive models of recurrent cortical dynamics alone, and identify novel directions for research on the mechanisms of higher-level cognition. PMID:26719851

  2. MEMORIAL WALK WITH MEMORIALS, TOWARD ENTRANCE GATE. VIEW TO WEST. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    MEMORIAL WALK WITH MEMORIALS, TOWARD ENTRANCE GATE. VIEW TO WEST. - Rock Island National Cemetery, Rock Island Arsenal, 0.25 mile north of southern tip of Rock Island, Rock Island, Rock Island County, IL

  3. ENTRANCE GATE AND MEMORIAL AVENUE APPROACH, LOOKING INTO CEMETERY WITH ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    ENTRANCE GATE AND MEMORIAL AVENUE APPROACH, LOOKING INTO CEMETERY WITH ADMINISTRATION BUILDING IN BACKGROUND. VIEW TO NORTHWEST. - Mountain Home National Cemetery, Mountain Home, Washington County, TN

  4. Radiation Issues and Applications of Floating Gate Memories

    NASA Technical Reports Server (NTRS)

    Scheick, L. Z.; Nguyen, D. N.

    2000-01-01

    The radiation effects that affect various systems that comprise floating gate memories are presented. The wear-out degradation results of unirradiated flash memories are compared to irradiated flash memories. The procedure analyzes the failure to write and erase caused by wear-out and degradation of internal charge pump circuits. A method is described for characterizing the radiation effects of the floating gate itself. The rate dependence, stopping power dependence, SEU susceptibility and applications of floating gate in radiation environment are presented. The ramifications for dosimetry and cell failure are discussed as well as for the long term use aspects of non-volatile memories.

  5. Stacked-Gate FET's For Analog Memory Elements

    NASA Technical Reports Server (NTRS)

    Thakoor, Anilkumar P.; Moopenn, Alexander W.

    1991-01-01

    Three-terminal, double-stacked-gate field-effect transistor (FET), developed as analog memory element. Particularly suited for use as synapse with variable connection strength in electronic neural network. Provides programmable, nonvolatile resistive connection, somewhat in manner of porous-gate FET described in "Porous-Floating-Gate Field-Effect Transistor" (NPO-17532). Resembles commercial erasable programmable read-only memory (EPROM) device, except for thickness of layers of silicon dioxide electrically isolating gates. Either p-channel or n-channel device.

  6. GETTYSBURG ADDRESS TABLET BESIDE ENTRANCE GATE AT MEMORIAL WALK. VIEW ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    GETTYSBURG ADDRESS TABLET BESIDE ENTRANCE GATE AT MEMORIAL WALK. VIEW TO EAST. - Rock Island National Cemetery, Rock Island Arsenal, 0.25 mile north of southern tip of Rock Island, Rock Island, Rock Island County, IL

  7. DETAIL OF FENCE FLANKING GATE AT ENTRANCE TO MEMORIAL WALK. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    DETAIL OF FENCE FLANKING GATE AT ENTRANCE TO MEMORIAL WALK. VIEW TO NORTHEAST. - Rock Island National Cemetery, Rock Island Arsenal, 0.25 mile north of southern tip of Rock Island, Rock Island, Rock Island County, IL

  8. GATE AND FLANKING FENCE AT ENTRANCE TO MEMORIAL WALK. VIEW ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    GATE AND FLANKING FENCE AT ENTRANCE TO MEMORIAL WALK. VIEW TO NORTHEAST. - Rock Island National Cemetery, Rock Island Arsenal, 0.25 mile north of southern tip of Rock Island, Rock Island, Rock Island County, IL

  9. Improved Reading Gate For Vertical-Bloch-Line Memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1994-01-01

    Improved design for reading gate of vertical-Bloch-line magnetic-bubble memory increases reliability of discrimination between binary ones and zeros. Magnetic bubbles that signify binary "1" and "0" produced by applying sufficiently large chopping currents to memory stripes. Bubbles then propagated differentially in bubble sorter. Method of discriminating between ones and zeros more reliable.

  10. Organic nano-floating-gate transistor memory with metal nanoparticles

    NASA Astrophysics Data System (ADS)

    Van Tho, Luu; Baeg, Kang-Jun; Noh, Yong-Young

    2016-04-01

    Organic non-volatile memory is advanced topics for various soft electronics applications as lightweight, low-cost, flexible, and printable solid-state data storage media. As a key building block, organic field-effect transistors (OFETs) with a nano-floating gate are widely used and promising structures to store digital information stably in a memory cell. Different types of nano-floating-gates and their various synthesis methods have been developed and applied to fabricate nanoparticle-based non-volatile memory devices. In this review, recent advances in the classes of nano-floating-gate OFET memory devices using metal nanoparticles as charge-trapping sites are briefly reviewed. Details of device fabrication, characterization, and operation mechanisms are reported based on recent research activities reported in the literature.

  11. Configurable Unitary Transformations and Linear Logic Gates Using Quantum Memories

    NASA Astrophysics Data System (ADS)

    Campbell, G. T.; Pinel, O.; Hosseini, M.; Ralph, T. C.; Buchler, B. C.; Lam, P. K.

    2014-08-01

    We show that a set of optical memories can act as a configurable linear optical network operating on frequency-multiplexed optical states. Our protocol is applicable to any quantum memories that employ off-resonant Raman transitions to store optical information in atomic spins. In addition to the configurability, the protocol also offers favorable scaling with an increasing number of modes where N memories can be configured to implement arbitrary N-mode unitary operations during storage and readout. We demonstrate the versatility of this protocol by showing an example where cascaded memories are used to implement a conditional cz gate.

  12. Solution processed molecular floating gate for flexible flash memories

    PubMed Central

    Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

    2013-01-01

    Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices. PMID:24172758

  13. Solution processed molecular floating gate for flexible flash memories.

    PubMed

    Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V A L

    2013-01-01

    Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices. PMID:24172758

  14. Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

    NASA Astrophysics Data System (ADS)

    Liu, Yongxun; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Masahara, Meishoku

    2014-01-01

    Three-dimensional (3D) fin-channel charge trapping (CT) flash memories with different gate materials of physical-vapor-deposited (PVD) titanium nitride (TiN) and n+-polycrystalline silicon (poly-Si) have successfully been fabricated by using (100)-oriented silicon-on-insulator (SOI) wafers and orientation-dependent wet etching. Electrical characteristics of the fabricated flash memories including statistical threshold voltage (Vt) variability, endurance, and data retention have been comparatively investigated. It was experimentally found that a larger memory window and a deeper erase are obtained in PVD-TiN-gated metal-oxide-nitride-oxide-silicon (MONOS)-type flash memories than in poly-Si-gated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type memories. The larger memory window and deeper erase of MONOS-type flash memories are contributed by the higher work function of the PVD-TiN metal gate than of the n+-poly-Si gate, which is effective for suppressing electron back tunneling during erase operation. It was also found that the initial Vt roll-off due to the short-channel effect (SCE) is directly related to the memory window roll-off when the gate length (Lg) is scaled down to 46 nm or less.

  15. Learning to use working memory: a reinforcement learning gating model of rule acquisition in rats.

    PubMed

    Lloyd, Kevin; Becker, Nadine; Jones, Matthew W; Bogacz, Rafal

    2012-01-01

    Learning to form appropriate, task-relevant working memory representations is a complex process central to cognition. Gating models frame working memory as a collection of past observations and use reinforcement learning (RL) to solve the problem of when to update these observations. Investigation of how gating models relate to brain and behavior remains, however, at an early stage. The current study sought to explore the ability of simple RL gating models to replicate rule learning behavior in rats. Rats were trained in a maze-based spatial learning task that required animals to make trial-by-trial choices contingent upon their previous experience. Using an abstract version of this task, we tested the ability of two gating algorithms, one based on the Actor-Critic and the other on the State-Action-Reward-State-Action (SARSA) algorithm, to generate behavior consistent with the rats'. Both models produced rule-acquisition behavior consistent with the experimental data, though only the SARSA gating model mirrored faster learning following rule reversal. We also found that both gating models learned multiple strategies in solving the initial task, a property which highlights the multi-agent nature of such models and which is of importance in considering the neural basis of individual differences in behavior. PMID:23115551

  16. The split-gate flash memory with an extra select gate for automotive applications

    NASA Astrophysics Data System (ADS)

    Tsair, Yong-Shiuan; Fang, Yean-Kuen; Wang, Yu-Hsiung; Chu, Wen-Ting; Hsieh, Chia-Ta; Lin, Yung-Tao; Wang, Chung S.; Wong, Myron; Lee, Scott; Smolen, Richard; Liu, Bill

    2009-10-01

    In this paper, novel split-gate flash memory with an extra select gate (ESG) to improve the operation window has been investigated in details. Experimental results show that with the ESG (called 2.5T cell), the cell showed a better program wordline disturb window than that of the traditional split-gate flash memory cells (called 1.5T cell) around 0.5 V (at Vs = 10 V). The offset of minimum drain voltage to avoid punch through disturb between without and with wordline stress for 2.5T cell and 1.5T cell are around 0.05 V and 0.2 V, respectively. We attribute these improvements in wordline disturb behaviors to the reduction of channel leakage current with the addition of ESG. During the erase stage, the gate oxide of the ESG suffers free stress, thus having better oxide integrity to resist the generation of channel leakage current. In addition, the ESG offers a reverse bias to retard the leakage current from drain to source.

  17. Auto and hetero-associative memory using a 2-D optical logic gate

    NASA Technical Reports Server (NTRS)

    Chao, Tien-Hsin (Inventor)

    1992-01-01

    An optical system for auto-associative and hetero-associative recall utilizing Hamming distance as the similarity measure between a binary input image vector V(sup k) and a binary image vector V(sup m) in a first memory array using an optical Exclusive-OR gate for multiplication of each of a plurality of different binary image vectors in memory by the input image vector. After integrating the light of each product V(sup k) x V(sup m), a shortest Hamming distance detection electronics module determines which product has the lowest light intensity and emits a signal that activates a light emitting diode to illuminate a corresponding image vector in a second memory array for display. That corresponding image vector is identical to the memory image vector V(sup m) in the first memory array for auto-associative recall or related to it, such as by name, for hetero-associative recall.

  18. Numerical simulation study of organic nonvolatile memory with polysilicon floating gate

    NASA Astrophysics Data System (ADS)

    Zhao-wen, Yan; Jiao, Wang; Jian-li, Qiao; Wen-jie, Chen; Pan, Yang; Tong, Xiao; Jian-hong, Yang

    2016-06-01

    A polysilicon-based organic nonvolatile floating-gate memory device with a bottom-gate top-contact configuration is investigated, in which polysilicon is sandwiched between oxide layers as a floating gate. Simulations for the electrical characteristics of the polysilicon floating gate-based memory device are performed. The shifted transfer characteristics and corresponding charge trapping mechanisms during programing and erasing (P/E) operations at various P/E voltages are discussed. The simulated results show that present memory exhibits a large memory window of 57.5 V, and a high read current on/off ratio of ≈ 103. Compared with the reported experimental results, these simulated results indicate that the polysilicon floating gate based memory device demonstrates remarkable memory effects, which shows great promise in device designing and practical application.

  19. Memory effect in silicon time-gated single-photon avalanche diodes

    SciTech Connect

    Dalla Mora, A.; Contini, D. Di Sieno, L.; Tosi, A.; Boso, G.; Villa, F.; Pifferi, A.

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  20. Floating gate memory-based monolayer MoS2 transistor with metal nanocrystals embedded in the gate dielectrics.

    PubMed

    Wang, Jingli; Zou, Xuming; Xiao, Xiangheng; Xu, Lei; Wang, Chunlan; Jiang, Changzhong; Ho, Johnny C; Wang, Ti; Li, Jinchai; Liao, Lei

    2015-01-14

    Charge trapping layers are formed from different metallic nanocrystals in MoS2 -based nanocrystal floating gate memory cells in a process compatible with existing fabrication technologies. The memory cells with Au nanocrystals exhibit impressive performance with a large memory window of 10 V, a high program/erase ratio of approximately 10(5) and a long retention time of 10 years. PMID:25115804

  1. Nonvolatile Quantum Dot Gate Memory (NVQDM): Tunneling Rate from Quantum Well Channel to Quantum Dot Gate

    NASA Astrophysics Data System (ADS)

    Hasaneen, El-Sayed; Heller, Evan; Bansal, Rajeev; Jain, Faquir

    2003-10-01

    In this paper, we compute the tunneling of electrons in a nonvolatile quantum dot memory (NVQDM) cell during the WRITE operation. The transition rate of electrons from a quantum well channel to the quantum dots forming the floating gate is calculated using a recently reported method by Chuang et al.[1]. Tunneling current is computed based on transport of electrons from the channel to the floating quantum dots. The maximum number of electrons on a dot is calculated using surface electric field and break down voltage of the tunneling dielectric material. Comparison of tunneling for silicon oxide and high-k dielectric gate insulators is also described. Capacitance-Voltage characteristics of a NVQDM device are calculated by solving the Schrodinger and Poisson equations self-consistently. In addition, the READ operation of the memory has been investigated analytically. Results for 70 nm channel length Si NVQDMs are presented. Threshold voltage is calculated including the effect of the charge on nanocrystal quantum dots. Current-voltage characteristics are obtained using BSIM3v3 model [2-3]. This work is supported by Office of Navel Research (N00014210883, Dr. D. Purdy, Program Monitor), Connecticut Innovations Inc./TranSwitch (CII # 00Y17), and National Science Foundation (CCR-0210428) grants. [1] S. L. Chuang and N. Holonyak, Appl. Phys. Lett., 80, pp. 1270, 2002. [2] Y. Chen et. al., BSIM3v3 Manual, Elect. Eng. and Comp. Dept., U. California, Berkeley, CA, 1996. [3] W. Liu, MOSFET Models for SPICE Simulation, John Wiley & Sons, Inc., 2001.

  2. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    SciTech Connect

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

    2014-10-20

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  3. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

    SciTech Connect

    Han, Jinhua; Wang, Wei Ying, Jun; Xie, Wenfa

    2014-01-06

    An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.

  4. Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors

    NASA Astrophysics Data System (ADS)

    Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

    2013-10-01

    In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements.In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr02987e

  5. Determining the state of non-volatile memory cells with floating gate using scanning probe microscopy

    NASA Astrophysics Data System (ADS)

    Hanzii, D.; Kelm, E.; Luapunov, N.; Milovanov, R.; Molodcova, G.; Yanul, M.; Zubov, D.

    2013-01-01

    During a failure analysis of integrated circuits, containing non-volatile memory, it is often necessary to determine its contents while Standard memory reading procedures are not applicable. This article considers how the state of NVM cells with floating gate can be determined using scanning probe microscopy. Samples preparation and measuring procedure are described with the example of Microchip microcontrollers with the EPROM memory (PIC12C508) and flash-EEPROM memory (PIC16F876A).

  6. Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

    SciTech Connect

    Wang, Wei Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

    2014-09-22

    Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm{sup 2}/V s. The unidirectional shift of turn-on voltage (V{sub on}) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (V{sub P}/V{sub E}) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm{sup 2}/V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the V{sub P}/V{sub E} of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional V{sub on} shift. As a result, an enlarged memory window of 28.6 V at the V{sub P}/V{sub E} of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.

  7. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

    NASA Astrophysics Data System (ADS)

    Che, Yongli; Zhang, Yating; Cao, Xiaolong; Song, Xiaoxian; Cao, Mingxuan; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

    2016-07-01

    Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔVth ˜ 15 V) and a long retention time (>105 s). The magnitude of ΔVth depended on both P/E voltages and the bias voltage (VDS): ΔVth was a cubic function to VP/E and linearly depended on VDS. Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.

  8. MOSFET nonvolatile memory with a high-density tungsten nanodot floating gate formed by self-assembled nanodot deposition

    NASA Astrophysics Data System (ADS)

    Pei, Y.; Yin, C.; Bea, J. C.; Kino, H.; Fukushima, T.; Tanaka, T.; Koyanagi, M.

    2009-04-01

    Metal-oxide-semiconductor field-effect transistor (MOSFET) nonvolatile memories with high-density tungsten nanodots (W-NDs) dispersed in silicon nitride as a floating gate were fabricated and characterized. The W-NDs with a high density of ~5 × 1012 cm-2 and small sizes of 2-3 nm were formed by self-assembled nanodot deposition (SAND). A large memory window of ~1.7 V was observed with bi-directional gate voltage sweeping between -10 and +10 V. Considering that there is no hysteresis memory window for the reference sample without W-NDs, this result indicates the charge trapping in W-NDs or related defects. Finally, the program/erase speed and retention characteristics were investigated and discussed in this paper.

  9. Flash Memory Device with ‘I’ Shape Floating Gate for Sub-70 nm NAND Flash Memory

    NASA Astrophysics Data System (ADS)

    Jung, Sang-Goo; Lee, Jong-Ho

    2006-11-01

    In this article, we proposed a novel ‘I’ shape floating gate applicable to the sub-70 nm flash memory cell with high performance and scalability. It has modified floating gate of conventional flash memory to have high coupling-ratio (\\mathit{CR}), low effect of interference or cross-talk. Specifically, it has ˜13% higher \\mathit{CR} and ˜33/46% lower effect of cross-talk of the bit-line/word-line state than those of conventional flash memory cell with scale-downed geometry. In addition, ‘I’ shape flash memory cell shows improved characteristics about programming time, drain disturbance, read current, sub-threshold swing, and drain induced barrier lowering than conventional flash memory cell.

  10. Organic field-effect transistor nonvolatile memories based on hybrid nano-floating-gate

    NASA Astrophysics Data System (ADS)

    Gao, Xu; She, Xiao-Jian; Liu, Chang-Hai; Sun, Qi-Jun; Liu, Jie; Wang, Sui-Dong

    2013-01-01

    High performance organic field-effect transistor nonvolatile memory is achieved by integrating gold nanoparticles and graphene oxide sheets as the hybrid nano-floating-gate. The device shows a large memory window of about 40 V, high ON/OFF ratio of reading current over 104, excellent programming/erasing endurance, and retention ability. The hybrid nano-floating-gate can increase the density of charge trapping sites, which are electrically separate from each other and thus suppress the stored charge leakage. The memory window is increased under illumination, and the results indicate that the photon-generated carriers facilitate the electron trapping but have almost no effect on the hole trapping.

  11. Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

    NASA Astrophysics Data System (ADS)

    Yuan, C. L.; Chan, M. Y.; Lee, P. S.; Darmawan, P.; Setiawan, Y.

    2007-04-01

    The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al2O3 nanocrystals embedded in amorphous Lu2O3 high k dielectric using pulsed laser ablation. The mean size and density of the Al2O3 nanocrystals are estimated to be about 5 nm and 7x1011 cm-2, respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical.

  12. Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage.

    PubMed

    Han, Su-Ting; Zhou, Ye; Chen, Bo; Wang, Chundong; Zhou, Li; Yan, Yan; Zhuang, Jiaqing; Sun, Qijun; Zhang, Hua; Roy, V A L

    2016-01-20

    Here, a single-device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch gate for field effect transistor (FET) on a flexible substrate. A high performance flexible RRAM with a three-layered structure is fabricated by utilizing solution-processed MoS2 nanosheets sandwiched between poly(methyl methacrylate) polymer layers. Gate coupling with the pentacene-based transistor can be controlled by the RRAM memory state to produce a nonprogrammed state (inactive) and a programmed state (active) with a well-defined memory window. Compared to the reference flash memory device based on the MoS2 floating gate, the hybrid device presents robust access speed and retention ability. Furthermore, the hybrid RRAM-gated FET is used to build an integrated logic circuit and a wide logic window in inverter logic is achieved. The controllable, well-defined memory window, long retention time, and fast access speed of this novel hybrid device may open up new possibilities of realizing fully functional nonvolatile memory for high-performance flexible electronics. PMID:26578160

  13. The Role of Anterior Nuclei of the Thalamus: A Subcortical Gate in Memory Processing: An Intracerebral Recording Study

    PubMed Central

    Štillová, Klára; Jurák, Pavel; Chládek, Jan; Chrastina, Jan; Halámek, Josef; Bočková, Martina; Goldemundová, Sabina; Říha, Ivo; Rektor, Ivan

    2015-01-01

    Objective To study the involvement of the anterior nuclei of the thalamus (ANT) as compared to the involvement of the hippocampus in the processes of encoding and recognition during visual and verbal memory tasks. Methods We studied intracerebral recordings in patients with pharmacoresistent epilepsy who underwent deep brain stimulation (DBS) of the ANT with depth electrodes implanted bilaterally in the ANT and compared the results with epilepsy surgery candidates with depth electrodes implanted bilaterally in the hippocampus. We recorded the event-related potentials (ERPs) elicited by the visual and verbal memory encoding and recognition tasks. Results P300-like potentials were recorded in the hippocampus by visual and verbal memory encoding and recognition tasks and in the ANT by the visual encoding and visual and verbal recognition tasks. No significant ERPs were recorded during the verbal encoding task in the ANT. In the visual and verbal recognition tasks, the P300-like potentials in the ANT preceded the P300-like potentials in the hippocampus. Conclusions The ANT is a structure in the memory pathway that processes memory information before the hippocampus. We suggest that the ANT has a specific role in memory processes, especially memory recognition, and that memory disturbance should be considered in patients with ANT-DBS and in patients with ANT lesions. ANT is well positioned to serve as a subcortical gate for memory processing in cortical structures. PMID:26529407

  14. Working memory gating mechanisms explain developmental change in rule-guided behavior.

    PubMed

    Unger, Kerstin; Ackerman, Laura; Chatham, Christopher H; Amso, Dima; Badre, David

    2016-10-01

    Cognitive control requires choosing contextual information to update into working memory (input gating), maintaining it there (maintenance) stable against distraction, and then choosing which subset of maintained information to use in guiding action (output gating). Recent work has raised the possibility that the development of rule-guided behavior, in the transition from childhood to adolescence, is linked specifically to changes in the gating components of working memory (Amso, Haas, McShane, & Badre, 2014). Given the importance of effective rule-guided behavior for decision making in this developmental transition, we used hierarchical rule tasks to probe the precise developmental dynamics of working memory gating. This mechanistic precision informs ongoing efforts to train cognitive control and working memory operations across typical and atypical development. The results of Experiment 1 verified that the development of rule-guided behavior is uniquely linked to increasing hierarchical complexity but not to increasing maintenance demands across 1st, 2nd, and 3rd order rule tasks. Experiment 2 then investigated whether this developmental trajectory in rule-guided behavior is best explained by change in input gating or output gating. Further, as input versus output gating also tend to correlate with a more proactive versus reactive control strategy in these tasks, we assessed developmental change in the degree to which these two processes were deployed efficiently given the task. Experiment 2 shows that the developmental change observed in Experiment 1 and in Amso et al. (2014) is likely a result of increased efficacy of output gating processes, as well as greater strategic efficiency in that adolescents opt for this costly process less often than children. PMID:27336178

  15. Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

    SciTech Connect

    Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin E-mail: chilf@suda.edu.cn Chi, Li-Feng E-mail: chilf@suda.edu.cn Wang, Sui-Dong E-mail: chilf@suda.edu.cn

    2015-03-23

    Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

  16. Auto- and hetero-associative memory using a 2-D optical logic gate

    NASA Technical Reports Server (NTRS)

    Chao, Tien-Hsin

    1989-01-01

    An optical associative memory system suitable for both auto- and hetero-associative recall is demonstrated. This system utilizes Hamming distance as the similarity measure between a binary input and a memory image with the aid of a two-dimensional optical EXCLUSIVE OR (XOR) gate and a parallel electronics comparator module. Based on the Hamming distance measurement, this optical associative memory performs a nearest neighbor search and the result is displayed in the output plane in real-time. This optical associative memory is fast and noniterative and produces no output spurious states as compared with that of the Hopfield neural network model.

  17. Isolated nanographene crystals for nano-floating gate in charge trapping memory

    PubMed Central

    Yang, Rong; Zhu, Chenxin; Meng, Jianling; Huo, Zongliang; Cheng, Meng; Liu, Donghua; Yang, Wei; Shi, Dongxia; Liu, Ming; Zhang, Guangyu

    2013-01-01

    Graphene exhibits unique electronic properties, and its low dimensionality, structural robustness, and high work-function make it very promising as the charge storage media for memory applications. Along with the development of miniaturized and scaled up devices, nanostructured graphene emerges as an ideal material candidate. Here we proposed a novel non-volatile charge trapping memory utilizing isolate and uniformly distributed nanographene crystals as nano-floating gate with controllable capacity and excellent uniformity. Nanographene charge trapping memory shows large memory window (4.5 V) at low operation voltage (±8 V), good retention (>10 years), chemical and thermal stability (1000°C), as well as tunable memory performance employing with different tunneling layers. The fabrication of such memory structure is compatible with existing semiconductor processing thus has promise on low-cost integrated nanoscale memory applications. PMID:23820388

  18. Radiation-hardened optically reconfigurable gate array exploiting holographic memory characteristics

    NASA Astrophysics Data System (ADS)

    Seto, Daisaku; Watanabe, Minoru

    2015-09-01

    In this paper, we present a proposal for a radiation-hardened optically reconfigurable gate array (ORGA). The ORGA is a type of field programmable gate array (FPGA). The ORGA configuration can be executed by the exploitation of holographic memory characteristics even if 20% of the configuration data are damaged. Moreover, the optoelectronic technology enables the high-speed reconfiguration of the programmable gate array. Such a high-speed reconfiguration can increase the radiation tolerance of its programmable gate array to 9.3 × 104 times higher than that of current FPGAs. Through experimentation, this study clarified the configuration dependability using the impulse-noise emulation and high-speed configuration capabilities of the ORGA with corrupt configuration contexts. Moreover, the radiation tolerance of the programmable gate array was confirmed theoretically through probabilistic calculation.

  19. A buffered nondestructive-readout Josephson memory cell with three gates

    SciTech Connect

    Yuh, P.F. )

    1991-03-01

    This paper describes the design and testing of a nondestructive readout memory cell wit buffer gates to eliminate the half-select problem and to increase the operating margins. A 50{mu}m {times} 52{mu}m cell has been fabricated using a Nb/AlO{sub x}/Nb process with 2.5 {mu}m line width and 3.75 {mu}m junction size. The measured margins for data, read-enable, and sense lines are {plus minus}27%, {plus minus}17%, and {plus minus}48%, respectively. Variations of this buffer-gate memory design are also discussed.

  20. Attention Gating in Short-Term Visual Memory.

    ERIC Educational Resources Information Center

    Reeves, Adam; Sperling, George

    1986-01-01

    An experiment is conducted showing that an attention shift to a stream of numerals presented in rapid serial visual presentation mode produces not a total loss, but a systematic distortion of order. An attention gating model (AGM) is developed from a more general attention model. (Author/LMO)

  1. An attention-gating recurrent working memory architecture for emergent speech representation

    NASA Astrophysics Data System (ADS)

    Elshaw, Mark; Moore, Roger K.; Klein, Michael

    2010-06-01

    This paper describes an attention-gating recurrent self-organising map approach for emergent speech representation. Inspired by evidence from human cognitive processing, the architecture combines two main neural components. The first component, the attention-gating mechanism, uses actor-critic learning to perform selective attention towards speech. Through this selective attention approach, the attention-gating mechanism controls access to working memory processing. The second component, the recurrent self-organising map memory, develops a temporal-distributed representation of speech using phone-like structures. Representing speech in terms of phonetic features in an emergent self-organised fashion, according to research on child cognitive development, recreates the approach found in infants. Using this representational approach, in a fashion similar to infants, should improve the performance of automatic recognition systems through aiding speech segmentation and fast word learning.

  2. A novel symmetrical split-gate structure for 2-bit per cell flash memory

    NASA Astrophysics Data System (ADS)

    Liang, Fang; Weiran, Kong; Jing, Gu; Bo, Zhang; Shichang, Zou

    2014-07-01

    A fully self-aligned symmetrical split-gate cell structure for 2-bit per cell flash memory with a very competitive bit size is presented. One common select gate is located between two floating gates and a pair of source/drain junctions are shared by the 2 bits. The fabrication method utilized here to create a self-aligned structure is to form a spacer against the prior layer without any additional mask. Although the cell consists of three channels in a series, the attributes from conventional split gate flash are still preserved with appropriate bias conditions. Program and erase operation is performed by using a source side injection (SSI) and a poly-to-poly tunneling mechanism respectively.

  3. Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

    NASA Astrophysics Data System (ADS)

    Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

    2016-01-01

    Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

  4. Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

    PubMed Central

    Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

    2016-01-01

    Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer. PMID:26813710

  5. The nature of working memory gating in Parkinson's disease: A multi-domain signal detection examination.

    PubMed

    Uitvlugt, Mitchell G; Pleskac, Timothy J; Ravizza, Susan M

    2016-04-01

    Distractions are ubiquitous; our brains are inundated with task-irrelevant information. Thus, to remember successfully, one must actively maintain relevant information and prevent distraction from entering working memory. Researchers suggest the basal ganglia-prefrontal pathways are vital to this process by acting as a working memory gate. Using Parkinson's disease as a model of frontostriatal functioning and with signal detection analyses, the present study aims to better characterize the contribution of frontostriatal pathways of this gating process and to determine how it operates across multiple domains. To achieve this, Parkinson's disease patients and healthy controls completed verbal and spatial working memory tasks consisting of three conditions: low-load without distraction; low-load with distraction; and high-load without distraction. Patients were tested both ON and OFF dopaminergic medication, allowing for assessment of the contribution of dorsal and ventral frontostriatal pathways. The results demonstrate that when medication is withheld, Parkinson's patients have a response bias to answer "NO" across all conditions and domains, supporting our hypothesis that the basal ganglia-prefrontal pathways allow or prevent updates of working memory. Contrastingly, medication status affects d' in the distraction condition but not in the high- or low-load conditions. We attribute this to stimulus valuation processes that were impaired by dopaminergic medication overdosing the ventral pathway. These findings are both consistent with the hypothesis that the working memory gate filters spatial and verbal information before it enters into the working memory system, adding support for the gate being a domain-general mechanism of the central executive. PMID:26518210

  6. High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

    PubMed Central

    Shih, Chien-Chung; Lee, Wen-Ya; Chiu, Yu-Cheng; Hsu, Han-Wen; Chang, Hsuan-Chun; Liu, Cheng-Liang; Chen, Wen-Chang

    2016-01-01

    Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plasmon resonance effects of metal NPs. To address this issue, we demonstrate a novel NFGM using the blends of hole-trapping poly (9-(4-vinylphenyl) carbazole) (PVPK) and electron-trapping ZnO NPs as the charge storage element. The memory devices exhibited a remarkably programmable memory window up to 60 V during the program/erase operations, which was attributed to the trapping/detrapping of charge carriers in ZnO NPs/PVPK composite. Furthermore, the devices showed the long-term retention time (>105 s) and WRER test (>200 cycles), indicating excellent electrical reliability and stability. Additionally, the fabricated transistor memory devices exhibited a relatively high transparency of 90% at the wavelength of 500 nm based on the spray-coated PEDOT:PSS as electrode, suggesting high potential for transparent organic electronic memory devices. PMID:26831222

  7. High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

    NASA Astrophysics Data System (ADS)

    Shih, Chien-Chung; Lee, Wen-Ya; Chiu, Yu-Cheng; Hsu, Han-Wen; Chang, Hsuan-Chun; Liu, Cheng-Liang; Chen, Wen-Chang

    2016-02-01

    Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plasmon resonance effects of metal NPs. To address this issue, we demonstrate a novel NFGM using the blends of hole-trapping poly (9-(4-vinylphenyl) carbazole) (PVPK) and electron-trapping ZnO NPs as the charge storage element. The memory devices exhibited a remarkably programmable memory window up to 60 V during the program/erase operations, which was attributed to the trapping/detrapping of charge carriers in ZnO NPs/PVPK composite. Furthermore, the devices showed the long-term retention time (>105 s) and WRER test (>200 cycles), indicating excellent electrical reliability and stability. Additionally, the fabricated transistor memory devices exhibited a relatively high transparency of 90% at the wavelength of 500 nm based on the spray-coated PEDOT:PSS as electrode, suggesting high potential for transparent organic electronic memory devices.

  8. Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film

    NASA Astrophysics Data System (ADS)

    Kanashima, Takeshi; Katsura, Yuu; Okuyama, Masanori

    2014-01-01

    An organic ferroelectric gate field-effect transistor (FET) memory has been fabricated using an organic semiconductor of rubrene thin film with a high mobility and a gate insulating layer of poly(vinylidene fluoride-tetrafluoroethylene) [P(VDF-TeFE)] thin film. A rubrene thin-film sheet was grown by physical vapor transport (PVT), and placed onto a spin-coated P(VDF-TeFE) thin-film layer, and Au source and drain electrodes were formed on this rubrene thin film. A hysteresis loop of the drain current-gate voltage (ID-VG) characteristic has been clearly observed in the ferroelectric gate FET, and is caused by the ferroelectricity. The maximum drain current is 1.5 × 10-6 A, which is about two orders of magnitude larger than that of the P(VDF-TeFE) gate FET using a pentacene thin film. Moreover, the mobility of this organic ferroelectric gate FET using rubrene thin film is 0.71 cm2 V-1 s-1, which is 35 times larger than that of the FET with pentacene thin film.

  9. Slow oscillations in two pairs of dopaminergic neurons gate long-term memory formation in Drosophila.

    PubMed

    Plaçais, Pierre-Yves; Trannoy, Séverine; Isabel, Guillaume; Aso, Yoshinori; Siwanowicz, Igor; Belliart-Guérin, Ghislain; Vernier, Philippe; Birman, Serge; Tanimoto, Hiromu; Preat, Thomas

    2012-04-01

    A fundamental duty of any efficient memory system is to prevent long-lasting storage of poorly relevant information. However, little is known about dedicated mechanisms that appropriately trigger production of long-term memory (LTM). We examined the role of Drosophila dopaminergic neurons in the control of LTM formation and found that they act as a switch between two exclusive consolidation pathways leading to LTM or anesthesia-resistant memory (ARM). Blockade, after aversive olfactory conditioning, of three pairs of dopaminergic neurons projecting on mushroom bodies, the olfactory memory center, enhanced ARM, whereas their overactivation conversely impaired ARM. Notably, blockade of these neurons during the intertrial intervals of a spaced training precluded LTM formation. Two pairs of these dopaminergic neurons displayed sustained calcium oscillations in naive flies. Oscillations were weakened by ARM-inducing massed training and were enhanced during LTM formation. Our results indicate that oscillations of two pairs of dopaminergic neurons control ARM levels and gate LTM. PMID:22366756

  10. Logic gates and memory cells based on single C60 electromechanical transistors

    NASA Astrophysics Data System (ADS)

    Ami, S.; Joachim, C.

    2001-03-01

    The equivalent electrical circuit of a single C60 electromechanical transistor in a planar lay-out is presented using its experimental STM characteristics. This circuit is used to demonstrate that such a hybrid molecular electronic device can be used as a class A amplifier, a NOT or NOR gate and to implement an SRAM memory point. All the devices are simulated using the SPICE routine to find their optimum load resistance and cantilever grid size. The class A amplifier can operate with a cut-off frequency of a few gigahertz while the logic gate and memory are limited to a few tens of megahertz, but for a very small power design in the picowatt range.

  11. Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

    NASA Astrophysics Data System (ADS)

    Wang, Shun; Gao, Xu; Zhong, Ya-Nan; Zhang, Zhong-Da; Xu, Jian-Long; Wang, Sui-Dong

    2016-07-01

    High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

  12. An embedded nonvolatile memory cell with spacer floating gate for power management integrated circuit applications

    NASA Astrophysics Data System (ADS)

    Na, Kee-Yeol; Baek, Ki-Ju; Lee, Gun-Woong; Kim, Yeong-Seuk

    2013-08-01

    This paper describes a simple nonvolatile memory cell with a poly-Si spacer floating gate for power management integrated circuit applications. The proposed memory cell is fabricated using a 0.35 μm double-poly high-voltage CMOS process which includes PIP capacitor, LV (5 V), and HV (20 V) CMOS devices. The floating gates of the proposed cell are buried under a LDD spacer oxide; thus the unit cell can be scaled easily in the channel length direction. In addition, any extra photo masking step is not required for the proposed cell in the applied fabrication process. The proposed cell shows an acceptable threshold voltage window of up to 104 cycles and less than 2% threshold voltage shifts in an 85 °C retention test.

  13. Gate controllable resistive random access memory devices using reduced graphene oxide

    NASA Astrophysics Data System (ADS)

    Hazra, Preetam; Resmi, A. N.; Jinesh, K. B.

    2016-04-01

    The biggest challenge in the resistive random access memory (ReRAM) technology is that the basic operational parameters, such as the set and reset voltages, the current on-off ratios (hence the power), and their operational speeds, strongly depend on the active and electrode materials and their processing methods. Therefore, for its actual technological implementations, the unification of the operational parameters of the ReRAM devices appears to be a difficult task. In this letter, we show that by fabricating a resistive memory device in a thin film transistor configuration and thus applying an external gate bias, we can control the switching voltage very accurately. Taking partially reduced graphene oxide, the gate controllable switching is demonstrated, and the possible mechanisms are discussed.

  14. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    NASA Astrophysics Data System (ADS)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  15. High-Performance Flexible Organic Nano-Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles.

    PubMed

    Jung, Ji Hyung; Kim, Sunghwan; Kim, Hyeonjung; Park, Jongnam; Oh, Joon Hak

    2015-10-01

    Nano-floating gate memory (NFGM) devices are transistor-type memory devices that use nanostructured materials as charge trap sites. They have recently attracted a great deal of attention due to their excellent performance, capability for multilevel programming, and suitability as platforms for integrated circuits. Herein, novel NFGM devices have been fabricated using semiconducting cobalt ferrite (CoFe2O4) nanoparticles (NPs) as charge trap sites and pentacene as a p-type semiconductor. Monodisperse CoFe2O4 NPs with different diameters have been synthesized by thermal decomposition and embedded in NFGM devices. The particle size effects on the memory performance have been investigated in terms of energy levels and particle-particle interactions. CoFe2O4 NP-based memory devices exhibit a large memory window (≈73.84 V), a high read current on/off ratio (read I(on)/I(off)) of ≈2.98 × 10(3), and excellent data retention. Fast switching behaviors are observed due to the exceptional charge trapping/release capability of CoFe2O4 NPs surrounded by the oleate layer, which acts as an alternative tunneling dielectric layer and simplifies the device fabrication process. Furthermore, the NFGM devices show excellent thermal stability, and flexible memory devices fabricated on plastic substrates exhibit remarkable mechanical and electrical stability. This study demonstrates a viable means of fabricating highly flexible, high-performance organic memory devices. PMID:26153227

  16. The relation between prospective memory and working memory: Evidence from event-related potential data.

    PubMed

    Wang, Ya; Cao, Xiao-Yan; Cui, Ji-Fang; Shum, David H K; Chan, Raymond C K

    2013-08-01

    Event-related potentials were used in this study to investigate the neural correlates of prospective memory and whether working memory is involved in prospective remembering. Thirty undergraduate or graduate students participated in the study. All participants completed a working memory test, namely, the Chinese Letter-Number Span Test, and were divided into two groups: the longer and shorter working memory span groups. They also undertook a prospective memory task while electrophysiological data were recorded. The results showed that participants in the longer working memory span group had shorter reaction times and smaller amplitudes in prospective positivity than participants in the shorter working memory span group. The results suggested that working memory resources are involved in the intention retrieval process of prospective remembering. PMID:26271181

  17. Wavelet analysis and HHG in nanorings: their applications in logic gates and memory mass devices

    NASA Astrophysics Data System (ADS)

    Cricchio, Dario; Fiordilino, Emilio

    2016-01-01

    We study the application of one nanoring driven by a laser field in different states of polarization in logic circuits. In particular we show that assigning Boolean values to different states of the incident laser field and to the emitted signals, we can create logic gates such as OR, XOR and AND. We also show the possibility of making logic circuits such as half-adder and full-adder using one and two nanorings respectively. Using two nanorings we made the Toffoli gate. Finally we use the final angular momentum acquired by the electron to store information and hence show the possibility of using an array of nanorings as a mass memory device.

  18. Wavelet analysis and HHG in nanorings: their applications in logic gates and memory mass devices.

    PubMed

    Cricchio, Dario; Fiordilino, Emilio

    2016-01-28

    We study the application of one nanoring driven by a laser field in different states of polarization in logic circuits. In particular we show that assigning Boolean values to different states of the incident laser field and to the emitted signals, we can create logic gates such as OR, XOR and AND. We also show the possibility of making logic circuits such as half-adder and full-adder using one and two nanorings respectively. Using two nanorings we made the Toffoli gate. Finally we use the final angular momentum acquired by the electron to store information and hence show the possibility of using an array of nanorings as a mass memory device. PMID:26662194

  19. Spatial Relational Memory Requires Hippocampal Adult Neurogenesis

    PubMed Central

    Koehl, Muriel; Ichas, François; De Giorgi, Francesca; Costet, Pierre; Abrous, Djoher Nora; Piazza, Pier Vincenzo

    2008-01-01

    The dentate gyrus of the hippocampus is one of the few regions of the mammalian brain where new neurons are generated throughout adulthood. This adult neurogenesis has been proposed as a novel mechanism that mediates spatial memory. However, data showing a causal relationship between neurogenesis and spatial memory are controversial. Here, we developed an inducible transgenic strategy allowing specific ablation of adult-born hippocampal neurons. This resulted in an impairment of spatial relational memory, which supports a capacity for flexible, inferential memory expression. In contrast, less complex forms of spatial knowledge were unaltered. These findings demonstrate that adult-born neurons are necessary for complex forms of hippocampus-mediated learning. PMID:18509506

  20. In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device.

    PubMed

    Tian, He; Zhao, Haiming; Wang, Xue-Feng; Xie, Qian-Yi; Chen, Hong-Yu; Mohammad, Mohammad Ali; Li, Cheng; Mi, Wen-Tian; Bie, Zhi; Yeh, Chao-Hui; Yang, Yi; Wong, H-S Philip; Chiu, Po-Wen; Ren, Tian-Ling

    2015-12-16

    A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density. PMID:26500160

  1. Quantum memory and phase gate in Optical cavities based on EIT

    NASA Astrophysics Data System (ADS)

    Borges, Halyne; Villas-Bôas, Celso

    In this work we investigate theoretically the implementation of an optical quantum memory in a system composed by a single atom, trapped in a high finesse optical cavity. In order to analyse the feasibility of implementing a quantum memory in the atom-cavity system based on the EIT phenomenon, we investigated in detail which parameter configuration the memory efficiency is optimized considering the two different setups. Our results shows that for a asymmetric one-sided cavity, which is the experimental setup commonly used to observe the EIT effect, the memory efficiency value saturates at about 8 . 5 % . Meanwhile, for an one-sided cavity, we observe for a sufficiently high value of the coupling constant g, the efficiency has its maximum value increased considerably, close to 100 % . However, this experimental setup is not suitable to observe cavity-EIT in the transmission spectrum, being necessary another kind of experiment, such as measurements phase difference field that leaves the cavity induced by the control field. Considering this configuration we also showed the implementation of a quantum phase gate based on the same nonlinear effect, where the pulse probe can experience a phase shift on the order of π, due to the presence or absence of a control pulse. Supported by FAPESP (Proc. 2014/12740-1) and INCT-IQ.

  2. More than Memory Impairment in Voltage-Gated Potassium Channel Complex Encephalopathy

    PubMed Central

    Bettcher, Brianne M.; Gelfand, Jeffrey M.; Irani, Sarosh R.; Neuhaus, John; Forner, Sven; Hess, Christopher P.; Geschwind, Michael D.

    2014-01-01

    Objective Autoimmune encephalopathies (AE) are a heterogeneous group of neurological disorders that affect cognition. Although memory difficulties are commonly endorsed, few reports of AE inclusively assess all cognitive domains in detail. Our aim was to perform an unbiased cognitive evaluation of AE patients with voltage-gated potassium channel complex antibodies (VGKCC-Abs) in order to delineate cognitive strengths and weaknesses. Methods We assessed serial VGKCC-Abs AE subjects (n=12) with a comprehensive evaluation of memory, executive functions, visuospatial skills, and language. Clinical MRI (n=10/12) was evaluated. Five subjects had serial cognitive testing available, permitting descriptive analysis of change. Results Subjects demonstrated mild to moderate impairment in memory (mean Z=−1.9) and executive functions (mean Z=−1.5), with variable impairments in language and sparing of visuospatial skills. MRI findings showed T2 hyperintensities in medial temporal lobe (10/10) and basal ganglia (2/10). Serial cognitive examination revealed heterogeneity in cognitive function; whereas most patients improved in one or more domains, residual impairments were observed in some patients. Conclusions This study augments prior neuropsychological analyses in VGKCC-Ab AE by identifying not only memory and executive function deficits, but also language impairments, with preservation of visuospatial functioning. This study further highlights the importance of domain-specific testing to parse out the complex cognitive phenotypes of VGKCC-Ab AE. PMID:24981998

  3. Competition and Cooperation among Relational Memory Representations.

    PubMed

    Schwarb, Hillary; Watson, Patrick D; Campbell, Kelsey; Shander, Christopher L; Monti, Jim M; Cooke, Gillian E; Wang, Jane X; Kramer, Arthur F; Cohen, Neal J

    2015-01-01

    Mnemonic processing engages multiple systems that cooperate and compete to support task performance. Exploring these systems' interaction requires memory tasks that produce rich data with multiple patterns of performance sensitive to different processing sub-components. Here we present a novel context-dependent relational memory paradigm designed to engage multiple learning and memory systems. In this task, participants learned unique face-room associations in two distinct contexts (i.e., different colored buildings). Faces occupied rooms as determined by an implicit gender-by-side rule structure (e.g., male faces on the left and female faces on the right) and all faces were seen in both contexts. In two experiments, we use behavioral and eye-tracking measures to investigate interactions among different memory representations in both younger and older adult populations; furthermore we link these representations to volumetric variations in hippocampus and ventromedial PFC among older adults. Overall, performance was very accurate. Successful face placement into a studied room systematically varied with hippocampal volume. Selecting the studied room in the wrong context was the most typical error. The proportion of these errors to correct responses positively correlated with ventromedial prefrontal volume. This novel task provides a powerful tool for investigating both the unique and interacting contributions of these systems in support of relational memory. PMID:26619203

  4. Competition and Cooperation among Relational Memory Representations

    PubMed Central

    Schwarb, Hillary; Watson, Patrick D.; Campbell, Kelsey; Shander, Christopher L.; Monti, Jim M.; Cooke, Gillian E.; Wang, Jane X.; Kramer, Arthur F.; Cohen, Neal J.

    2015-01-01

    Mnemonic processing engages multiple systems that cooperate and compete to support task performance. Exploring these systems’ interaction requires memory tasks that produce rich data with multiple patterns of performance sensitive to different processing sub-components. Here we present a novel context-dependent relational memory paradigm designed to engage multiple learning and memory systems. In this task, participants learned unique face-room associations in two distinct contexts (i.e., different colored buildings). Faces occupied rooms as determined by an implicit gender-by-side rule structure (e.g., male faces on the left and female faces on the right) and all faces were seen in both contexts. In two experiments, we use behavioral and eye-tracking measures to investigate interactions among different memory representations in both younger and older adult populations; furthermore we link these representations to volumetric variations in hippocampus and ventromedial PFC among older adults. Overall, performance was very accurate. Successful face placement into a studied room systematically varied with hippocampal volume. Selecting the studied room in the wrong context was the most typical error. The proportion of these errors to correct responses positively correlated with ventromedial prefrontal volume. This novel task provides a powerful tool for investigating both the unique and interacting contributions of these systems in support of relational memory. PMID:26619203

  5. Serotonergic Mechanisms in Addiction-Related Memories

    PubMed Central

    Nic Dhonnchadha, Bríd Á; Cunningham, Kathryn A.

    2008-01-01

    Drug-associated memories are a hallmark of addiction and a contributing factor in the continued use and relapse to drugs of abuse. Repeated association of drugs of abuse with conditioned stimuli leads to long-lasting behavioral responses that reflect reward-controlled learning and participate in the establishment of addiction. A greater understanding of the mechanisms underlying the formation and retrieval of drug-associated memories may shed light on potential therapeutic approaches to effectively intervene with drug use-associated memory. There is evidence to support the involvement of serotonin (5-HT) neurotransmission in learning and memory formation through the families of the 5-HT1 receptor (5-HT1R) and 5-HT2R which have also been shown to play a modulatory role in the behavioral effects induced by many psychostimulants. While there is a paucity of studies examining the effects of selective 5-HT1AR ligands, the available dataset suggests that 5-HT1BR agonists may inhibit retrieval of cocaine-associated memories. The 5-HT2AR and 5-HT2CR appear to be integral in the strong conditioned associations made between cocaine and environmental cues with 5-HT2AR antagonists and 5-HT2CR agonists possessing potency in blocking retrieval of cocaine-associated memories following cocaine self-administration procedures. The complex anatomical connectivity between 5-HT neurons and other neuronal phenotypes in limbic-corticostriatal brain structures, the heterogeneity of 5-HT receptors (5-HTXR) and the conflicting results of behavioral experiments which employ non-specific 5-HTXR ligands contribute to the complexity of interpreting the involvement of 5-HT systems in addictive-related memory processes. This review briefly traces the history of 5-HT involvement in retrieval of drug-cue associations and future targets of serotonergic manipulation that may reduce the impact that drug cues have on addictive behavior and relapse. PMID:18639587

  6. Investigation of metal oxide dielectrics for non-volatile floating gate and resistance switching memory applications

    NASA Astrophysics Data System (ADS)

    Chakrabarti, Bhaswar

    Floating gate transistor based flash memories have seen more than a decade of continuous growth as the prominent non-volatile memory technology. However, the recent trends indicate that the scaling of flash memory is expected to saturate in the near future. Several alternative technologies are being considered for the replacement of flash in the near future. The basic motivation for this work is to investigate the material properties of metal oxide based high-k dielectrics for potential applications in floating gate and resistance switching memory applications. This dissertation can be divided into two main sections. In the first section, the tunneling characteristics of the SiO2/HfO 2 stacks were investigated. Previous theoretical studies for thin SiO 2/ thick high-k stacks predict an increase in tunneling current in the high-bias regime (better programming) and a decrease in the low-bias regime (better retention) in comparison to pure SiO2 of same equivalent oxide thickness (EOT). However, our studies indicated that the performance improvement in SiO2/HfO2 stacks with thick HfO2 layer is difficult due to significant amount of charge traps in thick HfO2 layers. Oxygen anneal on the stacks did not improve the programming current and retention. X-ray photoelectron spectroscopy (XPS) studies indicated that this was due to formation of an interfacial oxide layer. The second part of the dissertation deals with the investigation of resistive switching in metal oxides. Although promising, practical applications of resistive random access memories (RRAM) require addressing several issues including high forming voltage, large operating currents and reliability. We first investigated resistive switching in HfTiOx nanolaminate with conventional TiN electrodes. The forming-free switching observed in the structures could be described by the quantum point contact model. The modelling results indicated that the forming-free characteristics can be due to a higher number of

  7. Novel process for widening memory window of sub-200 nm ferroelectric-gate field-effect transistor by ferroelectric coating the gate-stack sidewall

    NASA Astrophysics Data System (ADS)

    Van Hai, Le; Takahashi, Mitsue; Zhang, Wei; Sakai, Shigeki

    2015-01-01

    Ferroelectric-gate field-effect transistors (FeFETs) with metallurgical-gate lengths of 140 nm, 160 nm and 190 nm were successfully fabricated using a novel fabrication process. The gate stacks of the FeFETs were Pt/Sr0.8Ca0.2Bi2Ta2O9(SCBT)/HfO2/Si. Key to the process was covering the as-etched gate-stack sidewalls with SCBT precursor films and annealing altogether. The FeFETs which underwent the novel process showed larger memory windows than those without the process by about 0.5 V at scanned gate-voltages of 1 ± 5 V. Endurances of the FeFETs made by the novel process were measured up to 109 cycles with good separations of the on- and off-states. The endurance pulses were 1 ± 5 V with 2 μs period. Good data-retentions of them were also demonstrated which were measured for at least 6.5 days.

  8. Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology

    SciTech Connect

    Mueller, T.; Heinig, K.-H.; Moeller, W.; Bonafos, C.; Coffin, H.; Cherkashin, N.; Assayag, G. Ben; Schamm, S.; Zanchi, G.; Claverie, A.; Tence, M.; Colliex, C.

    2004-09-20

    Scalability and performance of current flash memories can be improved substantially by replacing the floating polycrystalline-silicon gate by a layer of Si dots. Here, we present both experimental and theoretical studies on ion beam synthesis of multi-dot layers consisting of Si nanocrystals (NCs) embedded in the gate oxide. Former studies have suffered from the weak Z contrast between Si and SiO{sub 2} in transmission electron microscopy (TEM). This letter maps Si plasmon losses with a scanning TEM equipped with a parallel electron energy loss spectroscopy system. Kinetic Monte Carlo simulations of Si phase separation have been performed and compared with Si plasmon maps. Predicted and measured Si morphologies agree remarkably well, both change with increasing ion fluence from isolated NCs to spinodal pattern. However, the predicted fluences are lower than the experimental ones. We identify as the main reason of this discrepancy the partial oxidation of implanted Si by atmospheric humidity, which penetrates into the as-implanted SiO{sub 2}.

  9. Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

    SciTech Connect

    Park, C. H.; Im, Seongil; Yun, Jungheum; Lee, Gun Hwan; Lee, Byoung H.; Sung, Myung M.

    2009-11-30

    We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgO{sub x} and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgO{sub x} gate operates under low voltage write-erase (WR-ER) pulse of {+-}20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of {+-}70 V for WR and ER states. Both devices stably operated under visible illuminations.

  10. Memory characteristics of metal-oxide-semiconductor capacitor with high density cobalt nanodots floating gate and HfO2 blocking dielectric

    NASA Astrophysics Data System (ADS)

    Pei, Yanli; Yin, Chengkuan; Kojima, Toshiya; Nishijima, Masahiko; Fukushima, Takafumi; Tanaka, Tetsu; Koyanagi, Mitsumasa

    2009-07-01

    In this letter, cobalt nanodots (Co-NDs) had been formed via a self-assembled nanodot deposition. High resolution transmission electron microscopy and x-ray photoelectron spectroscopy analyses clearly show that the high metallic Co-ND is crystallized with small size of ˜2 nm and high density of (4-5)×1012/cm2. The metal-oxide-semiconductor device with high density Co-NDs floating gate and high-k HfO2 blocking dielectric exhibits a wide range memory window (0-12 V) due to the charge trapping into and distrapping from Co-NDs. After 10 years retention, a large memory window of ˜1.3 V with a low charge loss of ˜47% was extrapolated. The relative longer data retention demonstrates the advantage of Co-NDs for nonvolatile memory application.

  11. Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio.

    PubMed

    Vu, Quoc An; Shin, Yong Seon; Kim, Young Rae; Nguyen, Van Luan; Kang, Won Tae; Kim, Hyun; Luong, Dinh Hoa; Lee, Il Min; Lee, Kiyoung; Ko, Dong-Su; Heo, Jinseong; Park, Seongjun; Lee, Young Hee; Yu, Woo Jong

    2016-01-01

    Concepts of non-volatile memory to replace conventional flash memory have suffered from low material reliability and high off-state current, and the use of a thick, rigid blocking oxide layer in flash memory further restricts vertical scale-up. Here, we report a two-terminal floating gate memory, tunnelling random access memory fabricated by a monolayer MoS2/h-BN/monolayer graphene vertical stack. Our device uses a two-terminal electrode for current flow in the MoS2 channel and simultaneously for charging and discharging the graphene floating gate through the h-BN tunnelling barrier. By effective charge tunnelling through crystalline h-BN layer and storing charges in graphene layer, our memory device demonstrates an ultimately low off-state current of 10(-14) A, leading to ultrahigh on/off ratio over 10(9), about ∼10(3) times higher than other two-terminal memories. Furthermore, the absence of thick, rigid blocking oxides enables high stretchability (>19%) which is useful for soft electronics. PMID:27586841

  12. FOREWORD: Shape Memory and Related Technologies

    NASA Astrophysics Data System (ADS)

    Liu, Yong

    2005-10-01

    The International Symposium on Shape Memory and Related Technologies (SMART2004) successfully took place in Singapore from November 24 to 26, 2004. SMART2004 aimed to provide a forum for presenting and discussing recent developments in the processing, characterization, application and performance prediction of shape memory materials, particularly shape memory alloys and magnetic shape memory materials. In recent years, we have seen a surge in the research and application of shape memory materials. This is due on the one hand to the successful applications of shape memory alloys (SMAs), particularly NiTi (nitinol), in medical practices and, on the other hand, to the discovery of magnetic shape memory (MSM) materials (or, ferromagnetic shape memory alloys, FSMAs). In recent years, applications of SMAs in various engineering practices have flourished owing to the unique combination of novel properties including high power density related to shape recovery, superelasticity with tunable hysteresis, high damping capacity combined with good fatigue resistance, excellent wear resistance due to unconventional deformation mechanisms (stress-induced phase transformation and martensite reorientation), and excellent biocompatibility and anticorrosion resistance, etc. In~the case of MSMs (or FSMAs), their giant shape change in a relatively low magnetic field has great potential to supplement the traditional actuation mechanisms and to have a great impact on the world of modern technology. Common mechanisms existing in both types of materials, namely thermoelastic phase transformation, martensite domain switching and their controlling factors, are of particular interest to the scientific community. Despite some successful applications, some fundamental issues remain unsatisfactorily understood. This conference hoped to link the fundamental research to engineering practices, and to further identify remaining problems in order to further promote the applications of shape memory

  13. Dynamic memory of a single voltage-gated potassium ion channel: A stochastic nonequilibrium thermodynamic analysis

    SciTech Connect

    Banerjee, Kinshuk

    2015-05-14

    In this work, we have studied the stochastic response of a single voltage-gated potassium ion channel to a periodic external voltage that keeps the system out-of-equilibrium. The system exhibits memory, resulting from time-dependent driving, that is reflected in terms of dynamic hysteresis in the current-voltage characteristics. The hysteresis loop area has a maximum at some intermediate voltage frequency and disappears in the limits of low and high frequencies. However, the (average) dissipation at long-time limit increases and finally goes to saturation with rising frequency. This raises the question: how diminishing hysteresis can be associated with growing dissipation? To answer this, we have studied the nonequilibrium thermodynamics of the system and analyzed different thermodynamic functions which also exhibit hysteresis. Interestingly, by applying a temporal symmetry analysis in the high-frequency limit, we have analytically shown that hysteresis in some of the periodic responses of the system does not vanish. On the contrary, the rates of free energy and internal energy change of the system as well as the rate of dissipative work done on the system show growing hysteresis with frequency. Hence, although the current-voltage hysteresis disappears in the high-frequency limit, the memory of the ion channel is manifested through its specific nonequilibrium thermodynamic responses.

  14. All-solution-processed nonvolatile flexible nano-floating gate memory devices

    NASA Astrophysics Data System (ADS)

    Kim, Chaewon; Song, Ji-Min; Lee, Jang-Sik; Lee, Mi Jung

    2014-01-01

    Organic semiconductors have great potential for future electronic applications owing to their inherent flexibility, low cost, light weight and ability to easily cover large areas. However, all of these advantageous material properties can only be harnessed if simple, cheap and low-temperature fabrication processes, which exclude the need for vacuum deposition and are compatible with flexible plastic substrates, are employed. There are a few solution-based techniques such as spin-coating and inkjet printing that meet the above criteria. In this paper, we describe a novel all-solution-processed nonvolatile memory device fabricated on a flexible plastic substrate. The source, drain and gate electrodes were printed using an inkjet printer with a conducting organic solution, while the semiconducting layer was spin-coated with an n-type polymer. The charge-trapping layer was composed of spin-coated reduced graphene oxide (rGO), which was prepared in the form of a solution using Hummer’s method. The fabricated device was characterized in order to confirm the memory characteristics. Device parameters such as threshold voltage shift, retention/endurance characteristics, mechanical robustness and reliability upon bending were also analyzed.

  15. Dynamic memory of a single voltage-gated potassium ion channel: A stochastic nonequilibrium thermodynamic analysis.

    PubMed

    Banerjee, Kinshuk

    2015-05-14

    In this work, we have studied the stochastic response of a single voltage-gated potassium ion channel to a periodic external voltage that keeps the system out-of-equilibrium. The system exhibits memory, resulting from time-dependent driving, that is reflected in terms of dynamic hysteresis in the current-voltage characteristics. The hysteresis loop area has a maximum at some intermediate voltage frequency and disappears in the limits of low and high frequencies. However, the (average) dissipation at long-time limit increases and finally goes to saturation with rising frequency. This raises the question: how diminishing hysteresis can be associated with growing dissipation? To answer this, we have studied the nonequilibrium thermodynamics of the system and analyzed different thermodynamic functions which also exhibit hysteresis. Interestingly, by applying a temporal symmetry analysis in the high-frequency limit, we have analytically shown that hysteresis in some of the periodic responses of the system does not vanish. On the contrary, the rates of free energy and internal energy change of the system as well as the rate of dissipative work done on the system show growing hysteresis with frequency. Hence, although the current-voltage hysteresis disappears in the high-frequency limit, the memory of the ion channel is manifested through its specific nonequilibrium thermodynamic responses. PMID:25978913

  16. Single-crystal C60 needle/CuPc nanoparticle double floating-gate for low-voltage organic transistors based non-volatile memory devices.

    PubMed

    Chang, Hsuan-Chun; Lu, Chien; Liu, Cheng-Liang; Chen, Wen-Chang

    2015-01-01

    Low-voltage organic field-effect transistor memory devices exhibiting a wide memory window, low power consumption, acceptable retention, endurance properties, and tunable memory performance are fabricated. The performance is achieved by employing single-crystal C60 needles and copper phthalocyanine nanoparticles to produce an ambipolar (hole/electron) trapping effect in a double floating-gate architecture. PMID:25358891

  17. Sensorimotor gating and memory deficits in an APP/PS1 double transgenic mouse model of Alzheimer's disease.

    PubMed

    Wang, Hongxing; He, Jue; Zhang, Ruiguo; Zhu, Shenghua; Wang, Junhui; Kong, Lynda; Tan, Qingrong; Li, Xin-Min

    2012-07-15

    Alzheimer's disease (AD) is a neurodegenerative disorder associated with cognitive deterioration and neuropsychiatric symptoms. Sensorimotor gating deficit has been identified in neuropsychiatric diseases. The aim of the present study was to evaluate the possible sensorimotor gating deficit and its correlation to memory impairment and cerebral β-amyloid (Aβ) plaque deposits in an amyloid precursor protein (APP)/presenilin-1 (PS1) double transgenic mouse model of AD. The sensorimotor gating in 3-, 7- and-22-month-old non-transgenic and transgenic mice was evaluated in a prepulse inhibition (PPI) task. Results revealed that the PPI was lower in the 7- and 22-month-old transgenic mice compared with the age-matched control, while the response to startle pulse-alone in the transgenic and non-transgenic mice was comparable. Congo red staining showed that Aβ neuropathology of transgenic mice aggravated with age, and the 3-month-old transgenic mice started to have minimum brain Aβ plaques, corresponding to the early stage of AD phenotype. Furthermore, memory impairment in the 7-month-old transgenic mice was detected in a water maze test. These results suggest that the sensorimotor gating is impaired with the progressing of AD phenotype, and its deficit may be correlated to cerebral Aβ neuropathology and memory impairment in the APP/PS1 transgenic mouse model of AD. PMID:22595040

  18. Investigation of charge trapping mechanism for nanocrystal-based organic nonvolatile floating gate memory devices by band structure analysis

    NASA Astrophysics Data System (ADS)

    Lee, Dong-Hoon; Lim, Ki-Tae; Park, Eung-Kyu; Shin, Ha-Chul; Kim, Chung Soo; Park, Kee-Chan; Ahn, Joung-Real; Bang, Jin Ho; Kim, Yong-Sang

    2016-05-01

    This paper investigates the charge trapping mechanism and electrical performance of CdSe nanocrystals, such as nanoparticles and nanowires in organic floating gate memory devices. Despite of same chemical component, each nanocrystals show different electrical performances with distinct trapping mechanism. CdSe nanoparticles trap holes in the memory device; on the contrary, nanowires trap electrons. This phenomenon is mainly due to the difference of energy band structures between nanoparticles and nanowires, measured by the ultraviolet photoelectron spectroscopy. Also, we investigated the memory performance with C- V characteristics, charging and discharging phenomena, and retention time. The nanoparticle based hole trapping memory device has large memory window while the nanowire based electron trapping memory shows a narrow memory window. In spite of narrow memory window, the nanowire based memory device shows better retention performance of about 55% of the charge even after 104 sec of charging. The contrasting performance of nanoparticle and nanowire is attributed to the difference in their energy band and the morphology of thin layer in the device. [Figure not available: see fulltext.

  19. Asymmetric dual-gate-structured one-transistor dynamic random access memory cells for retention characteristics improvement

    NASA Astrophysics Data System (ADS)

    Kim, Hyungjin; Lee, Jong-Ho; Park, Byung-Gook

    2016-08-01

    One of the major concerns of one-transistor dynamic random access memory (1T-DRAM) is poor retention time. In this letter, a 1T-DRAM cell with two separated asymmetric gates was fabricated and evaluated to improve sensing margin and retention characteristics. It was observed that significantly enhanced sensing margin and retention time over 1 s were obtained using a negatively biased second gate and trapped electrons in the nitride layer because of increased hole capacity in the floating body. These findings indicate that the proposed device could serve as a promising candidate for overcoming retention issues of 1T-DRAM cells.

  20. Verbal declarative memory impairments in specific language impairment are related to working memory deficits

    PubMed Central

    Lum, Jarrad A.G.; Ullman, Michael T.; Conti-Ramsden, Gina

    2015-01-01

    This study examined verbal declarative memory functioning in SLI and its relationship to working memory. Encoding, recall, and recognition of verbal information was examined in children with SLI who had below average working memory (SLILow WM), children with SLI who had average working memory (SLIAvg. WM) and, a group of non-language impaired children with average working memory (TDAvg. WM). The SLILow WM group was significantly worse than both the SLIAvg. WM and TDAvg. WM groups at encoding verbal information and at retrieving verbal information following a delay. In contrast, the SLIAvg. WM group showed no verbal declarative memory deficits. The study demonstrates that verbal declarative memory deficits in SLI only occur when verbal working memory is impaired. Thus SLI declarative memory is largely intact and deficits are likely to be related to working memory impairments. PMID:25660053

  1. Memory styles and related abilities in presentation of self.

    PubMed

    Sehulster, J R

    1995-01-01

    The notion of a person's memory style (elaborated in Sehulster, 1988) was investigated as it relates to the presentation of self. A memory style is defined as a combination of a subject's (perceived) ability in verbal memory, auto- biographical memory, and prospective memory, as measured by the Memory Scale (Sehulster, 1981b). In addition to filling out the Memory Scale, 325 subjects completed a 72-item questionnaire that tapped descriptions of abilities and experiences. The range of abilities and experiences was drawn loosely from Gardner's (1985) notion of multiple intelligences. Distinct patterns of self-report were observed for different memory styles. For instance, a love of listening to music was associated with the memory style that is high in both verbal and autobiographical memory but low in prospective memory; a love for numbers and mathematics was associated with the memory style that is high in both verbal and prospective memory but low in autobiographical memory. The results suggest broad individual differences in information processing. Gender differences are discussed in relation to memory styles. PMID:7733413

  2. Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

    SciTech Connect

    Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S.

    2013-12-21

    Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices.

  3. Could Talk Therapy Ease Chemo-Related Memory Issues?

    MedlinePlus

    ... 158606.html Could Talk Therapy Ease Chemo-Related Memory Issues? Researchers suggest their approach could improve survivors' ... developed a cognitive-behavioral therapy (CBT) program called Memory and Attention Adaptation Training to help cancer survivors ...

  4. A nonvolatile memory device made of a ferroelectric polymer gate nanodot and a single-walled carbon nanotube.

    PubMed

    Son, Jong Yeog; Ryu, Sangwoo; Park, Yoon-Cheol; Lim, Yun-Tak; Shin, Yun-Sok; Shin, Young-Han; Jang, Hyun Myung

    2010-12-28

    We demonstrate a field-effect nonvolatile memory device made of a ferroelectric copolymer gate nanodot and a single-walled carbon nanotube (SW-CNT). A position-controlled dip-pen nanolithography was performed to deposit a poly(vinylidene fluoride-ran-trifluoroethylene) (PVDF-TrFE) nanodot onto the SW-CNT channel with both a source and drain for field-effect transistor (FET) function. PVDF-TrFE was chosen as a gate dielectric nanodot in order to efficiently exploit its bipolar chemical nature. A piezoelectric force microscopy study confirmed the canonical ferroelectric responses of the PVDF-TrFE nanodot fabricated at the center of the SW-CNT channel. The two distinct ferroelectric polarization states with the stable current retention and fatigue-resistant characteristics make the present PVDF-TrFE-based FET suitable for nonvolatile memory applications. PMID:21050014

  5. Control of Turing patterns and their usage as sensors, memory arrays, and logic gates

    NASA Astrophysics Data System (ADS)

    Muzika, František; Schreiber, Igor

    2013-10-01

    We study a model system of three diffusively coupled reaction cells arranged in a linear array that display Turing patterns with special focus on the case of equal coupling strength for all components. As a suitable model reaction we consider a two-variable core model of glycolysis. Using numerical continuation and bifurcation techniques we analyze the dependence of the system's steady states on varying rate coefficient of the recycling step while the coupling coefficients of the inhibitor and activator are fixed and set at the ratios 100:1, 1:1, and 4:5. We show that stable Turing patterns occur at all three ratios but, as expected, spontaneous transition from the spatially uniform steady state to the spatially nonuniform Turing patterns occurs only in the first case. The other two cases possess multiple Turing patterns, which are stabilized by secondary bifurcations and coexist with stable uniform periodic oscillations. For the 1:1 ratio we examine modular spatiotemporal perturbations, which allow for controllable switching between the uniform oscillations and various Turing patterns. Such modular perturbations are then used to construct chemical computing devices utilizing the multiple Turing patterns. By classifying various responses we propose: (a) a single-input resettable sensor capable of reading certain value of concentration, (b) two-input and three-input memory arrays capable of storing logic information, (c) three-input, three-output logic gates performing combinations of logical functions OR, XOR, AND, and NAND.

  6. Relating color working memory and color perception.

    PubMed

    Allred, Sarah R; Flombaum, Jonathan I

    2014-11-01

    Color is the most frequently studied feature in visual working memory (VWM). Oddly, much of this work de-emphasizes perception, instead making simplifying assumptions about the inputs served to memory. We question these assumptions in light of perception research, and we identify important points of contact between perception and working memory in the case of color. Better characterization of its perceptual inputs will be crucial for elucidating the structure and function of VWM. PMID:25038028

  7. The relations among abuse, depression, and adolescents' autobiographical memory.

    PubMed

    Johnson, Rebecca J; Greenhoot, Andrea Follmer; Glisky, Elizabeth; McCloskey, Laura A

    2005-06-01

    This study examined the relations among early and recent experiences with abuse, depression, and adolescents' autobiographical memory in a longitudinal study of family violence. Participants' (N = 134) exposure to violence was documented when they were 6 to 12 years old and again when they were 12 to 18 years old. The second assessment included measures of depression and autobiographical memory for childhood experiences. Memory problems were more consistently related to current circumstances than childhood abuse history. For instance, depressive symptoms were associated with increased rates of "overgeneral" childhood memories. Recent exposure to family violence predicted more overgeneral memories, shorter memories, and lower rates of negative memories. The patterns suggest that adolescents currently stressed by depression or family violence might strategically avoid the details of past experiences to regulate affect. PMID:15901224

  8. Sparse distributed memory and related models

    NASA Technical Reports Server (NTRS)

    Kanerva, Pentti

    1992-01-01

    Described here is sparse distributed memory (SDM) as a neural-net associative memory. It is characterized by two weight matrices and by a large internal dimension - the number of hidden units is much larger than the number of input or output units. The first matrix, A, is fixed and possibly random, and the second matrix, C, is modifiable. The SDM is compared and contrasted to (1) computer memory, (2) correlation-matrix memory, (3) feet-forward artificial neural network, (4) cortex of the cerebellum, (5) Marr and Albus models of the cerebellum, and (6) Albus' cerebellar model arithmetic computer (CMAC). Several variations of the basic SDM design are discussed: the selected-coordinate and hyperplane designs of Jaeckel, the pseudorandom associative neural memory of Hassoun, and SDM with real-valued input variables by Prager and Fallside. SDM research conducted mainly at the Research Institute for Advanced Computer Science (RIACS) in 1986-1991 is highlighted.

  9. Multifunctional organic phototransistor-based nonvolatile memory achieved by UV/ozone treatment of the Ta₂O₅ gate dielectric.

    PubMed

    Liu, Xiaohui; Zhao, Haoyan; Dong, Guifang; Duan, Lian; Li, Dong; Wang, Liduo; Qiu, Yong

    2014-06-11

    An organic phototransistor (OPT) shows nonvolatile memory effect due to its novel optical writing and electrical erasing processes. In this work, we utilize an organic light-emitting diode (OLED) as the light source to investigate OPT-based memory (OPTM) performance. It is found that the OPTM can be used as either flash memory or write-once read-many-times memory by adjusting the properties of the Ta2O5 gate dielectric layer. UV/ozone treatment is applied to effectively change dielectric properties of the Ta2O5 film. The mechanisms for this are examined by X-ray photoelectron spectroscopy and capacitance-voltage measurement. It turns out that the densities of oxygen vacancies and defects in the first 1.8 nm Ta2O5 films near the Ta2O5/semiconductor interface are reduced. Furthermore, for the first time, we use this multifunctional OPTM, which unites the photosensitive and memory properties in one single device, as an optical feedback system to tune the brightness of the OLED. Our study suggests that these OPTMs have potential applications in tuning the brightness uniformity, improving the display quality and prolonging the lifetime of flat panel displays. PMID:24813352

  10. Relations between the functions of autobiographical memory and psychological wellbeing.

    PubMed

    Waters, Theodore E A

    2014-01-01

    Researchers have proposed that autobiographical memory serves three basic functions in everyday life: self-definition, social connection, and directing behaviour (e.g., Bluck, Alea, Habermas, & Rubin, 2005). However, no research has examined relations between the functions of autobiographical memory and healthy functioning (i.e., psychological wellbeing). The present research examined the relations between the self, social, and directive functions of autobiographical memory and three factors of psychological wellbeing in single and recurring autobiographical memories. A total of 103 undergraduate students were recruited and provided ratings of each function for four autobiographical memories (two single, two recurring events). Results found that individuals who use their autobiographical memories to serve self, social, and directive functions reported higher levels of Purpose and Communion and Positive Relationships, and that these relations differ slightly by event type. PMID:23537126

  11. Non-Alzheimer's disease—related memory impairment and dementia

    PubMed Central

    Arlt, Sönke

    2013-01-01

    Although Alzheimer's disease (AD) is a common cause of memory impairment and dementia in the elderly disturbed memory function is a widespread subjective and/or objective symptom in a variety of medical conditions. The early detection and correct distinction of AD from non-AD memory impairment is critically important to detect possibly treatable and reversible underlying causes. In the context of clinical research, it is crucial to correctly distinguish between AD or non-AD memory impairment in order to build homogenous study populations for the assessment of new therapeutic possibilities. The distinction of AD from non-AD memory impairment may be difficult, especially in mildly affected patients, due to an overlap of clinical symptoms and biomarker alterations between AD and certain non-AD conditions. This review aims to describe recent aspects of the differential diagnosis of AD and non-AD related memory impairment and how these may be considered in the presence of memory deficits. PMID:24459413

  12. Attending to items in working memory: Evidence that refreshing and memory search are closely related

    PubMed Central

    Vergauwe, Evie; Cowan, Nelson

    2014-01-01

    Refreshing refers to the use of attention to reactivate items in working memory (WM). The current study aims at testing the hypothesis that refreshing is closely related to memory search. The assumption is that refreshing and memory search both rely on a basic covert memory process that quickly retrieves the memory items into the focus of attention, thereby reactivating the information (Cowan, 1992; Vergauwe & Cowan, 2014). Consistent with the idea that people use their attention to prevent loss from WM, previous research has shown that increasing the proportion of time during which attention is occupied by concurrent processing, thereby preventing refreshing, results in poorer recall performance in complex span tasks (Barrouillet, Portrat, & Camos, 2011). Here, we tested whether recall performance is differentially affected by prolonged attentional capture caused by memory search. If memory search and refreshing both rely on retrieval from WM, then prolonged attentional capture caused by memory search should not lead to forgetting because memory items are assumed to be reactivated during memory search, in the same way as they would if that period of time were to be used for refreshing. Consistent with this idea, prolonged attentional capture had a disruptive effect when it was caused by the need to retrieve knowledge from long-term memory but not when it was caused by the need to search through the content of WM. The current results support the idea that refreshing operates through a process of retrieval of information into the focus of attention. PMID:25361821

  13. Attending to items in working memory: evidence that refreshing and memory search are closely related.

    PubMed

    Vergauwe, Evie; Cowan, Nelson

    2015-08-01

    Refreshing refers to the use of attention to reactivate items in working memory (WM). In the present study, we aimed to test the hypothesis that refreshing is closely related to memory search. The assumption is that refreshing and memory search both rely on a basic covert memory process that quickly retrieves the memory items into the focus of attention, thereby reactivating the information (Cowan, 1992; Vergauwe & Cowan, 2014). Consistent with the idea that people use their attention to prevent loss from WM, previous research has shown that increasing the proportion of time during which attention is occupied by concurrent processing, thereby preventing refreshing, results in poorer recall performance in complex span tasks (Barrouillet, Portrat, & Camos, Psychological Review, 118, 175-192, 2011). Here, we tested whether recall performance is differentially affected by prolonged attentional capture caused by memory search. If memory search and refreshing both rely on retrieval from WM, then prolonged attentional capture caused by memory search should not lead to forgetting, because memory items are assumed to be reactivated during memory search, in the same way that they would be if that period of time were used for refreshing. Consistent with this idea, prolonged attentional capture had a disruptive effect when it was caused by the need to retrieve knowledge from long-term memory, but not when it was caused by the need to search through the content of WM. The present results support the idea that refreshing operates through a process of retrieval of information into the focus of attention. PMID:25361821

  14. Relational Memory during Infancy: Evidence from Eye Tracking

    ERIC Educational Resources Information Center

    Richmond, Jenny; Nelson, Charles A.

    2009-01-01

    Here we report evidence from a new eye-tracking measure of relational memory that suggests that 9-month-old infants can encode memories in terms of the relations among items, a function putatively subserved by the hippocampus. Infants learned about the association between faces that were superimposed on unique scenic backgrounds. During test…

  15. Course of Relational and Non-Relational Recognition Memory across the Adult Lifespan

    ERIC Educational Resources Information Center

    Soei, Eleonore; Daum, Irene

    2008-01-01

    Human recognition memory shows a decline during normal ageing, which is thought to be related to age-associated dysfunctions of mediotemporal lobe structures. Whether the hippocampus is critical for human general relational memory or for spatial relational memory only is still disputed. The human perirhinal cortex is thought to be critically…

  16. Cognitive mechanisms associated with auditory sensory gating.

    PubMed

    Jones, L A; Hills, P J; Dick, K M; Jones, S P; Bright, P

    2016-02-01

    Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants additionally completed a paired-stimulus paradigm as a measure of auditory sensory gating. A correlational analysis revealed that several tasks correlated significantly with sensory gating. However once fluid intelligence and working memory were accounted for, only a measure of latent inhibition and accuracy scores on the continuous performance task showed significant sensitivity to sensory gating. We conclude that sensory gating reflects the identification of goal-irrelevant information at the encoding (input) stage and the subsequent ability to selectively attend to goal-relevant information based on that previous identification. PMID:26716891

  17. Cognitive mechanisms associated with auditory sensory gating

    PubMed Central

    Jones, L.A.; Hills, P.J.; Dick, K.M.; Jones, S.P.; Bright, P.

    2016-01-01

    Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants additionally completed a paired-stimulus paradigm as a measure of auditory sensory gating. A correlational analysis revealed that several tasks correlated significantly with sensory gating. However once fluid intelligence and working memory were accounted for, only a measure of latent inhibition and accuracy scores on the continuous performance task showed significant sensitivity to sensory gating. We conclude that sensory gating reflects the identification of goal-irrelevant information at the encoding (input) stage and the subsequent ability to selectively attend to goal-relevant information based on that previous identification. PMID:26716891

  18. Advantages of using relative-phase Toffoli gates with an application to multiple control Toffoli optimization

    NASA Astrophysics Data System (ADS)

    Maslov, Dmitri

    2016-02-01

    Various implementations of the Toffoli gate up to a relative phase have been known for years. The advantage over the regular Toffoli gate is its smaller circuit size. However, its use has been often limited to a demonstration of quantum control in designs such as those where the Toffoli gate is being applied last or otherwise for some specific reasons the relative phase does not matter. It was commonly believed that the relative-phase deviations would prevent the relative-phase Toffoli gates from being very helpful in practical large-scale designs. In this paper, we report three circuit identities that provide the means for replacing certain configurations of the multiple control Toffoli gates with their simpler relative-phase implementations, up to a selectable unitary on certain qubits, and without changing the overall functionality. We illustrate the advantage via applying those identities to the optimization of the known circuits implementing multiple control Toffoli gates, and report the reductions in the controlled-not count, T count, as well as the number of ancillae used. We suggest that a further study of the relative-phase Toffoli implementations and their use may yield other optimizations.

  19. Are memory self-efficacy and memory performance related? A meta-analysis.

    PubMed

    Beaudoin, Marine; Desrichard, Olivier

    2011-03-01

    The association between memory self-efficacy (MSE) and memory performance is highly documented in the literature. However, previous studies have produced inconsistent results, and there is no consensus on the existence of a significant link between these two variables. In order to evaluate whether or not the effect size of the MSE-memory performance relationship in healthy adults is significant and to test several theory-driven moderators, we conducted a meta-analysis of published and unpublished studies. A random-effects model analysis of data from 107 relevant studies (673 effect sizes) indicated a low but significant weighted mean correlation between MSE and memory performance, r = .15, 95% CI [.13, .17]. In addition, the mean effect size was significantly moderated by the way MSE was assessed. Memory performance was more strongly related to concurrent MSE (perceived current ability to perform a given task) than it was to global MSE (perceived usual memory ability in general). Furthermore, we found marginally larger MSE-memory performance correlations when the memory situations used to assess MSE involved familiar stimuli. No effect of the method used to assess global MSE or domain MSE (memory rating vs. performance predictions) was found. The results also show that the resource demands of the memory tasks have a moderator effect, as the MSE-performance correlation is larger with free-recall and cued-recall tasks than it is with recognition tasks. Limitations (generalization issues, moderators not considered) and implications for future research are discussed. PMID:21244133

  20. P50 sensory gating is related to performance on select tasks of cognitive inhibition

    PubMed Central

    Yadon, Carly A.; Bugg, Julie M.; Kisley, Michael A.; Davalos, Deana B.

    2009-01-01

    P50 suppression deficits have been documented in clinical and nonclinical populations, but the behavioral correlates of impaired auditory sensory gating remain poorly understood. In the present study, we examined the relationship between P50 gating and healthy adults’ performance on cognitive inhibition tasks. On the basis of load theory (Lavie, Hirst, de Fockert, & Viding, 2004), we predicted that a high perceptual load, a possible consequence of poor auditory P50 sensory gating, would have differential (i.e., positive vs. negative) effects on performance of cognitive inhibition tasks. A dissociation was observed such that P50 gating was negatively related to interference resolution on a Stroop task and positively related to response inhibition on a go/no-go task. Our findings support the idea that a high perceptual load may be beneficial to Stroop performance because of the reduced processing of distractors but detrimental to performance on the go/no-go task because of interference with stimulus discrimination. PMID:19897797

  1. Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.

    PubMed

    Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

    2015-07-21

    Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10(5) times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use. PMID:26098677

  2. Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories.

    PubMed

    Han, Su-Ting; Zhou, Ye; Chen, Bo; Zhou, Li; Yan, Yan; Zhang, Hua; Roy, V A L

    2015-11-01

    Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 10(4) s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure. PMID:26445097

  3. Distributed Learning Enhances Relational Memory Consolidation

    ERIC Educational Resources Information Center

    Litman, Leib; Davachi, Lila

    2008-01-01

    It has long been known that distributed learning (DL) provides a mnemonic advantage over massed learning (ML). However, the underlying mechanisms that drive this robust mnemonic effect remain largely unknown. In two experiments, we show that DL across a 24 hr interval does not enhance immediate memory performance but instead slows the rate of…

  4. Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ma, Zhongyuan; Wang, Wen; Yang, Huafeng; Jiang, Xiaofan; Yu, Jie; Qin, Hua; Xu, Ling; Chen, Kunji; Huang, Xinfan; Li, Wei; Xu, Jun; Feng, Duan

    2016-02-01

    The down-scaling of nanocrystal Si (nc-Si) floating gate memory must overcome the challenge of leakage current induced by the conventional ultra-thin tunnel layer. We demonstrate that an improved memory performance based on the Al/SiNx/nc-Si/Al2O3/Si structure can be achieved by adopting the Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition. A larger memory window of 7.9 V and better retention characteristics of 4.7 V after 105 s can be obtained compared with the devices containing a conventional SiO2 tunnel layer of equivalent thickness. The capacitance-voltage characteristic reveals that the Al2O3 tunnel layer has a smaller electron barrier height, which ensures that more electrons are injected into the nc-Si dots through the Al2O3/Si interface. The analysis of the conductance-voltage and high-resolution cross-section transmission microscopy reveals that the smaller nc-Si dots dominate in the charge injection in the nc-Si floating gate MOS device with an Al2O3 tunnel layer. With an increase of the nc-Si size, both nc-Si and the interface contribute to the charge storage capacity and retention. The introduction of the Al2O3 tunnel layer in nc-Si floating gate memory provides a method to achieve an improved performance of nc-Si floating gate memory.

  5. Memory-related brain lateralisation in birds and humans.

    PubMed

    Moorman, Sanne; Nicol, Alister U

    2015-03-01

    Visual imprinting in chicks and song learning in songbirds are prominent model systems for the study of the neural mechanisms of memory. In both systems, neural lateralisation has been found to be involved in memory formation. Although many processes in the human brain are lateralised--spatial memory and musical processing involves mostly right hemisphere dominance, whilst language is mostly left hemisphere dominant--it is unclear what the function of lateralisation is. It might enhance brain capacity, make processing more efficient, or prevent occurrence of conflicting signals. In both avian paradigms we find memory-related lateralisation. We will discuss avian lateralisation findings and propose that birds provide a strong model for studying neural mechanisms of memory-related lateralisation. PMID:25036892

  6. Emotional learning selectively and retroactively strengthens memories for related events.

    PubMed

    Dunsmoor, Joseph E; Murty, Vishnu P; Davachi, Lila; Phelps, Elizabeth A

    2015-04-16

    Neurobiological models of long-term memory propose a mechanism by which initially weak memories are strengthened through subsequent activation that engages common neural pathways minutes to hours later. This synaptic tag-and-capture model has been hypothesized to explain how inconsequential information is selectively consolidated following salient experiences. Behavioural evidence for tag-and-capture is provided by rodent studies in which weak early memories are strengthened by future behavioural training. Whether a process of behavioural tagging occurs in humans to transform weak episodic memories into stable long-term memories is unknown. Here we show, in humans, that information is selectively consolidated if conceptually related information, putatively represented in a common neural substrate, is made salient through an emotional learning experience. Memory for neutral objects was selectively enhanced if other objects from the same category were paired with shock. Retroactive enhancements as a result of emotional learning were observed following a period of consolidation, but were not observed in an immediate memory test or for items strongly encoded before fear conditioning. These findings provide new evidence for a generalized retroactive memory enhancement, whereby inconsequential information can be retroactively credited as relevant, and therefore selectively remembered, if conceptually related information acquires salience in the future. PMID:25607357

  7. Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories

    NASA Astrophysics Data System (ADS)

    Han, Su-Ting; Zhou, Ye; Chen, Bo; Zhou, Li; Yan, Yan; Zhang, Hua; Roy, V. A. L.

    2015-10-01

    Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 104 s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure.Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal

  8. Could Talk Therapy Ease Chemo-Related Memory Issues?

    MedlinePlus

    ... of Health, the U.S. Department of Health and Human Services, or federal policy. More Health News on: Cancer Chemotherapy Cancer--Living with Cancer Memory Recent Health News Related MedlinePlus Health Topics Cancer ...

  9. Sensory gating, inhibition control and child intelligence: an event-related potentials study.

    PubMed

    Liu, T; Xiao, T; Shi, J; Zhao, L

    2011-08-25

    The current study explored the relationship among sensory gating, inhibition control and human intelligence in two groups of children with different intellectual levels. A Go-Nogo task was adopted to investigate children's behavioral performances in inhibition control processing, and a paired-click paradigm with event-related potentials (ERP) recording was used to explore children's neural activation during sensory gating processing. The behavioral results showed that the intellectually gifted children committed significantly less commission error rate, which indicated that gifted children had better inhibition control than their average peers. The electrophysiological results showed that the gifted group had lower S2P50/S1P50 amplitude ratio than the average group and illustrated that gifted children had stronger sensory gating. The results of correlation analysis between inhibition control performances and sensory gating showed that children with stronger P50 suppression (lower S2/S1 latency ratio) in the fronto-central area and stronger N100 suppression (lower S2/S1 amplitude ratio) in the frontal and fronto-central areas had shorter reaction time in the Go-Nogo task. Moreover, the correlation patterns between sensory gating and inhibition control were different between two groups of children. The present findings further demonstrated the close relationship among sensory gating, inhibition control and human intelligence in children. PMID:21640164

  10. Self-images and related autobiographical memories in schizophrenia.

    PubMed

    Bennouna-Greene, Mehdi; Berna, Fabrice; Conway, Martin A; Rathbone, Clare J; Vidailhet, Pierre; Danion, Jean-Marie

    2012-03-01

    Schizophrenia is a severe mental illness, which affects sense of identity. While the ability to have a coherent vision of the self (i.e., self-images) relies partly on its reciprocal relationships with autobiographical memories, little is known about how memories ground "self-images" in schizophrenia. Twenty-five patients with schizophrenia and 25 controls were asked to give six autobiographical memories related to four self-statements they considered essential for defining their identity. Results showed that patients' self-images were more passive than those of controls. Autobiographical memories underlying self-images were less thematically linked to these self-images in patients. We also found evidence of a weakened sense of self and a deficient organization of autobiographical memories grounding the self in schizophrenia. These abnormalities may account for the poor cohesiveness of the self in schizophrenia. PMID:22040535

  11. Voltage-Gated Sodium Channels: Biophysics, Pharmacology, and Related Channelopathies

    PubMed Central

    Savio-Galimberti, Eleonora; Gollob, Michael H.; Darbar, Dawood

    2012-01-01

    Voltage-gated sodium channels (VGSC) are multi-molecular protein complexes expressed in both excitable and non-excitable cells. They are primarily formed by a pore-forming multi-spanning integral membrane glycoprotein (α-subunit) that can be associated with one or more regulatory β-subunits. The latter are single-span integral membrane proteins that modulate the sodium current (INa) and can also function as cell adhesion molecules. In vitro some of the cell-adhesive functions of the β-subunits may play important physiological roles independently of the α-subunits. Other endogenous regulatory proteins named “channel partners” or “channel interacting proteins” (ChiPs) like caveolin-3 and calmodulin/calmodulin kinase II (CaMKII) can also interact and modulate the expression and/or function of VGSC. In addition to their physiological roles in cell excitability and cell adhesion, VGSC are the site of action of toxins (like tetrodotoxin and saxitoxin), and pharmacologic agents (like antiarrhythmic drugs, local anesthetics, antiepileptic drugs, and newly developed analgesics). Mutations in genes that encode α- and/or β-subunits as well as the ChiPs can affect the structure and biophysical properties of VGSC, leading to the development of diseases termed sodium “channelopathies”.  This review will outline the structure, function, and biophysical properties of VGSC as well as their pharmacology and associated channelopathies and highlight some of the recent advances in this field. PMID:22798951

  12. Aging-related episodic memory decline: are emotions the key?

    PubMed Central

    Kinugawa, Kiyoka; Schumm, Sophie; Pollina, Monica; Depre, Marion; Jungbluth, Carolin; Doulazmi, Mohamed; Sebban, Claude; Zlomuzica, Armin; Pietrowsky, Reinhard; Pause, Bettina; Mariani, Jean; Dere, Ekrem

    2013-01-01

    Episodic memory refers to the recollection of personal experiences that contain information on what has happened and also where and when these events took place. Episodic memory function is extremely sensitive to cerebral aging and neurodegerative diseases. We examined episodic memory performance with a novel test in young (N = 17, age: 21–45), middle-aged (N = 16, age: 48–62) and aged but otherwise healthy participants (N = 8, age: 71–83) along with measurements of trait and state anxiety. As expected we found significantly impaired episodic memory performance in the aged group as compared to the young group. The aged group also showed impaired working memory performance as well as significantly decreased levels of trait anxiety. No significant correlation between the total episodic memory and trait or state anxiety scores was found. The present results show an age-dependent episodic memory decline along with lower trait anxiety in the aged group. Yet, it still remains to be determined whether this difference in anxiety is related to the impaired episodic memory performance in the aged group. PMID:23378831

  13. Floating-gated memory based on carbon nanotube field-effect transistors with Si floating dots

    NASA Astrophysics Data System (ADS)

    Seike, Kohei; Fujii, Yusuke; Ohno, Yasuhide; Maehashi, Kenzo; Inoue, Koichi; Matsumoto, Kazuhiko

    2014-01-01

    We have fabricated a carbon nanotube field-effect transistor (CNTFET)-based nonvolatile memory device with Si floating dots. The electrical characteristics of this memory device were compared with those of devices with a HfO2 charge storage layer or Au floating dots. For a sweep width of 6 V, the memory window of the devices with the Si floating dots increased twofold as compared with that of the devices with the HfO2 layer. Moreover, the retention characteristics revealed that, for the device with the Au floating dots, the off-state had almost the same current as the on-state at the 400th s. However, the devices with the Si floating dots had longer-retention characteristics. The results indicate that CNTFET-based devices with Si floating dots are promising candidates for low-power consumption nonvolatile memory devices.

  14. Aerobic fitness predicts relational memory but not item memory performance in healthy young adults.

    PubMed

    Baym, Carol L; Khan, Naiman A; Pence, Ari; Raine, Lauren B; Hillman, Charles H; Cohen, Neal J

    2014-11-01

    Health factors such as an active lifestyle and aerobic fitness have long been linked to decreased risk of cardiovascular disease, stroke, and other adverse health outcomes. Only more recently have researchers begun to investigate the relationship between aerobic fitness and memory function. Based on recent findings in behavioral and cognitive neuroscience showing that the hippocampus might be especially sensitive to the effects of exercise and fitness, the current study assessed hippocampal-dependent relational memory and non-hippocampal-dependent item memory in young adults across a range of aerobic fitness levels. Aerobic fitness was assessed using a graded exercise test to measure oxygen consumption during maximal exercise (VO2max), and relational and item memory were assessed using behavioral and eye movement measures. Behavioral results indicated that aerobic fitness was positively correlated with relational memory performance but not item memory performance, suggesting that the beneficial effects of aerobic fitness selectively affect hippocampal function and not that of the surrounding medial temporal lobe cortex. Eye movement results further supported the specificity of this fitness effect to hippocampal function, in that aerobic fitness predicted disproportionate preferential viewing of previously studied relational associations but not of previously viewed items. Potential mechanisms underlying this pattern of results, including neurogenesis, are discussed. PMID:24893739

  15. Memory deficit in patients with schizophrenia and posttraumatic stress disorder: relational vs item-specific memory

    PubMed Central

    Jung, Wookyoung; Lee, Seung-Hwan

    2016-01-01

    It has been well established that patients with schizophrenia have impairments in cognitive functioning and also that patients who experienced traumatic events suffer from cognitive deficits. Of the cognitive deficits revealed in schizophrenia or posttraumatic stress disorder (PTSD) patients, the current article provides a brief review of deficit in episodic memory, which is highly predictive of patients’ quality of life and global functioning. In particular, we have focused on studies that compared relational and item-specific memory performance in schizophrenia and PTSD, because measures of relational and item-specific memory are considered the most promising constructs for immediate tangible development of clinical trial paradigm. The behavioral findings of schizophrenia are based on the tasks developed by the Cognitive Neuroscience Treatment Research to Improve Cognition in Schizophrenia (CNTRICS) initiative and the Cognitive Neuroscience Test Reliability and Clinical Applications for Schizophrenia (CNTRACS) Consortium. The findings we reviewed consistently showed that schizophrenia and PTSD are closely associated with more severe impairments in relational memory compared to item-specific memory. Candidate brain regions involved in relational memory impairment in schizophrenia and PTSD are also discussed. PMID:27274250

  16. Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors

    NASA Astrophysics Data System (ADS)

    Bak, Jun Yong; Kim, So-Jung; Byun, Chun-Won; Pi, Jae-Eun; Ryu, Min-Ki; Hwang, Chi Sun; Yoon, Sung-Min

    2015-09-01

    Device designs of charge-trap oxide memory thin-film transistors (CTM-TFTs) were investigated to enhance their nonvolatile memory performances. The first strategy was to optimize the film thicknesses of the tunneling and charge-trap (CT) layers in order to meet requirements of both higher operation speed and longer retention time. While the program speed and memory window were improved for the device with a thinner tunneling layer, a long retention time was obtained only for the device with a tunneling layer thicker than 5 nm. The carrier concentration and charge-trap densities were optimized in the 30-nm-thick CT layer. It was observed that 10-nm-thick tunneling, 30-nm-thick CT, and 50-nm-thick blocking layers were the best configuration for our proposed CTM-TFTs, where a memory on/off margin higher than 107 was obtained, and a memory margin of 6.6 × 103 was retained even after the lapse of 105 s. The second strategy was to examine the effects of the geometrical relations between the CT and active layers for the applications of memory elements embedded in circuitries. The CTM-TFTs fabricated without an overlap between the CT layer and the drain electrode showed an enhanced program speed by the reduced parasitic capacitance. The drain-bias disturbance for the memory off-state was effectively suppressed even when a higher read-out drain voltage was applied. Appropriate device design parameters, such as the film thicknesses of each component layer and the geometrical relations between them, can improve the memory performances and expand the application fields of the proposed CTM-TFTs.

  17. Novel gate-all-around polycrystalline silicon nanowire memory device with HfAlO charge-trapping layer

    NASA Astrophysics Data System (ADS)

    Lee, Ko-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan

    2014-01-01

    Gate-all-around (GAA) nanowire (NW) memory devices with a SiN- or Hf-based charge-trapping (CT) layer of the same thickness were studied in this work. The GAA NW devices were fabricated with planar thin-film transistors (TFTs) on the same substrate using a novel scheme without resorting to the use of advanced lithographic tools. Owing to their higher dielectric constant, the GAA NW devices with a HfO2 or HfAlO CT layer show greatly enhanced programming/erasing (P/E) efficiency as compared with those with a SiN CT layer. Furthermore, the incorporation of Al into the Hf-based dielectric increases the thermal stability of the CT layer, improving retention and endurance characteristics.

  18. Formation of holographic memory for optically reconfigurable gate array by angle-multiplexing recording of multi-circuit information in liquid crystal composites

    NASA Astrophysics Data System (ADS)

    Ogiwara, Akifumi; Maekawa, Hikaru; Watanabe, Minoru; Moriwaki, Retsu

    2014-02-01

    A holographic polymer-dispersed liquid crystal (HPDLC) memory to record multi-context information for an optically reconfigurable gate array is formed by the angle-multiplexing recording using a successive laser exposure in liquid crystal (LC) composites. The laser illumination system is constructed using the half mirror and photomask written by the different configuration contexts placed on the motorized stages under the control of a personal computer. The fabricated holographic memory implements a precise reconstruction of configuration contexts corresponding to the various logical circuits such as OR circuit and NOR circuit by the laser illumination at different incident angle in the HPDLC memory.

  19. Azobenzene-functionalized gold nanoparticles as hybrid double-floating-gate in pentacene thin-film transistors/memories with enhanced response, retention, and memory windows.

    PubMed

    Tseng, Chiao-Wei; Huang, Ding-Chi; Tao, Yu-Tai

    2013-10-01

    Gold nanoparticles (Au-NPs) with surfaces covered with a self-assembled monolayer of azobenzene derivatives were prepared at the interface of dielectric insulator SiO2 and pentacene thin film. Transistors constructed with these composite channel materials exhibited electric bistability upon different gate biases, with the monolayer serving as a barrier layer, a work function modulator, as well as additional charge trapping sites at the Au-NPs/semiconductor interface at the same time. In comparison with simple alkanethiol monolayer-covered Au-NPs, the CH3-substituted azobenzene-functionalized Au-NPs result in a transistor memory device with about 70% more charges trapped, much faster response time as well as higher retention time. Besides, depending on the substituent on the azobenzene moieties (CH3, H, or CF3) and the tethering alkyl chain length, the speed at which the carriers are trapped (affecting switching response) and the stability of the carriers that are trapped (affecting memory retention) can be modulated to improve the device performance. The structural characterization and electronic characteristics of these devices will be detailed. PMID:24025199

  20. The role of nicotine on respiratory sensory gating measured by respiratory-related evoked potentials.

    PubMed

    Chan, Pei-Ying Sarah; Davenport, P W

    2010-03-01

    Respiratory perception can be altered by changes in emotional or psychological states. This may be due to affective (i.e., anxiety) modulation of respiratory sensory gating. Nicotine withdrawal induces elevated anxiety and decreased somatosensory gating. Respiratory sensory gating is evidenced by decreased amplitude of the respiratory-related evoked potentials (RREP) N(1) peak for the second occlusion (S2) when two 150-ms occlusions are presented with a 500-ms interval during an inspiration. The N(1) peak amplitude ratio of the S2 and first occlusion (S1) (S2/S1) is <0.5 and due to central neural sensory gating. We hypothesized that withdrawal from nicotine is anxiogenic and reduces respiratory gating in smokers. The RREP was recorded in smokers with 12-h withdrawal from nicotine and nonsmokers using a paired occlusion protocol. In smokers, the RREP was measured after nicotine withdrawal, then with either nicotine or placebo gum, followed by the second RREP trial. Nonsmokers received only placebo gum. After nicotine withdrawal, the smokers had a higher state anxiety compared with nonsmokers. There was a significant interaction between groups (nonsmokers vs. smokers with nicotine vs. smokers with placebo) and test (pre- vs. posttreatment) in RREP N(1) peak amplitude S2/S1. The S2/S1 in the smokers were larger than in nonsmokers before treatment. After gum treatment, the smoker-with-placebo group had a significantly larger S2/S1 than the other two groups. The S2/S1 was significantly decreased after the administration of nicotine gum in smokers due to significantly decreased S2 amplitudes. The RREP N(f) and P(1) peaks were unaffected. These results demonstrated that respiratory sensory gating was decreased in smokers after nicotine withdrawal. Nicotine increased respiratory sensory gating in smokers with a S2/S1 similar to that of the nonsmokers. Nicotine did not change respiratory sensory information arrival, but secondary information processing in respiratory

  1. Graphene quantum dots as a highly efficient solution-processed charge trapping medium for organic nano-floating gate memory.

    PubMed

    Ji, Yongsung; Kim, Juhan; Cha, An-Na; Lee, Sang-A; Lee, Myung Woo; Suh, Jung Sang; Bae, Sukang; Moon, Byung Joon; Lee, Sang Hyun; Lee, Dong Su; Wang, Gunuk; Kim, Tae-Wook

    2016-04-01

    A highly efficient solution-processible charge trapping medium is a prerequisite to developing high-performance organic nano-floating gate memory (NFGM) devices. Although several candidates for the charge trapping layer have been proposed for organic memory, a method for significantly increasing the density of stored charges in nanoscale layers remains a considerable challenge. Here, solution-processible graphene quantum dots (GQDs) were prepared by a modified thermal plasma jet method; the GQDs were mostly composed of carbon without any serious oxidation, which was confirmed by x-ray photoelectron spectroscopy. These GQDs have multiple energy levels because of their size distribution, and they can be effectively utilized as charge trapping media for organic NFGM applications. The NFGM device exhibited excellent reversible switching characteristics, with an on/off current ratio greater than 10(6), a stable retention time of 10(4) s and reliable cycling endurance over 100 cycles. In particular, we estimated that the GQDs layer trapped ∼7.2 × 10(12) cm(-2) charges per unit area, which is a much higher density than those of other solution-processible nanomaterials, suggesting that the GQDs layer holds promise as a highly efficient nanoscale charge trapping material. PMID:26905768

  2. Floating gate memory with charge storage dots array formed by Dps protein modified with site-specific binding peptides

    NASA Astrophysics Data System (ADS)

    Kamitake, Hiroki; Uenuma, Mutsunori; Okamoto, Naofumi; Horita, Masahiro; Ishikawa, Yasuaki; Yamashita, Ichro; Uraoka, Yukiharu

    2015-05-01

    We report a nanodot (ND) floating gate memory (NFGM) with a high-density ND array formed by a biological nano process. We utilized two kinds of cage-shaped proteins displaying SiO2 binding peptide (minTBP-1) on their outer surfaces: ferritin and Dps, which accommodate cobalt oxide NDs in their cavities. The diameters of the cobalt NDs were regulated by the cavity sizes of the proteins. Because minTBP-1 is strongly adsorbed on the SiO2 surface, high-density cobalt oxide ND arrays were obtained by a simple spin coating process. The densities of cobalt oxide ND arrays based on ferritin and Dps were 6.8 × 1011 dots cm-2 and 1.2 × 1012 dots cm-2, respectively. After selective protein elimination and embedding in a metal-oxide-semiconductor (MOS) capacitor, the charge capacities of both ND arrays were evaluated by measuring their C-V characteristics. The MOS capacitor embedded with the Dps ND array showed a wider memory window than the device embedded with the ferritin ND array. Finally, we fabricated an NFGM with a high-density ND array based on Dps, and confirmed its competent writing/erasing characteristics and long retention time.

  3. Revised associative inference paradigm confirms relational memory impairment in schizophrenia

    PubMed Central

    Armstrong, Kristan; Williams, Lisa E.; Heckers, Stephan

    2013-01-01

    Objective Patients with schizophrenia have widespread cognitive impairments, with selective deficits in relational memory. We previously reported a differential relational memory deficit in schizophrenia using the Associative Inference Paradigm (AIP), a task suggested by the Cognitive Neuroscience Treatment Research to Improve Cognition in Schizophrenia (CNTRICS) initiative to examine relational memory. However, the AIP had limited feasibility for testing in schizophrenia due to high attrition of schizophrenia patients during training. Here we developed and tested a revised version of the AIP to improve feasibility. Method 30 healthy control and 37 schizophrenia subjects received 3 study-test sessions on 3 sets of paired associates: H-F1 (house paired with face), H-F2 (same house paired with new face), and F3-F4 (two novel faces). After training, subjects were tested on the trained, non-inferential Face-Face pairs (F3-F4) and novel, inferential Face-Face pairs (F1-F2), constructed from the faces of the trained House-Face pairs. Results Schizophrenia patients were significantly more impaired on the inferential F1-F2 pairs than the non-inferential F3-F4 pairs, providing evidence for a differential relational memory deficit. Only 8 percent of schizophrenia patients were excluded from testing due to poor training performance. Conclusions The revised AIP confirmed the previous finding of a relational memory deficit in a larger and more representative sample of schizophrenia patients. PMID:22612578

  4. The hippocampus and memory for orderly stimulus relations.

    PubMed

    Dusek, J A; Eichenbaum, H

    1997-06-24

    Human declarative memory involves a systematic organization of information that supports generalizations and inferences from acquired knowledge. This kind of memory depends on the hippocampal region in humans, but the extent to which animals also have declarative memory, and whether inferential expression of memory depends on the hippocampus in animals, remains a major challenge in cognitive neuroscience. To examine these issues, we used a test of transitive inference pioneered by Piaget to assess capacities for systematic organization of knowledge and logical inference in children. In our adaptation of the test, rats were trained on a set of four overlapping odor discrimination problems that could be encoded either separately or as a single representation of orderly relations among the odor stimuli. Normal rats learned the problems and demonstrated the relational memory organization through appropriate transitive inferences about items not presented together during training. By contrast, after disconnection of the hippocampus from either its cortical or subcortical pathway, rats succeeded in acquiring the separate discrimination problems but did not demonstrate transitive inference, indicating that they had failed to develop or could not inferentially express the orderly organization of the stimulus elements. These findings strongly support the view that the hippocampus mediates a general declarative memory capacity in animals, as it does in humans. PMID:9192700

  5. Positive and Negative Symptoms in Schizophrenia Relate to Distinct Oscillatory Signatures of Sensory Gating

    PubMed Central

    Keil, Julian; Roa Romero, Yadira; Balz, Johanna; Henjes, Melissa; Senkowski, Daniel

    2016-01-01

    Oscillatory activity in neural populations and temporal synchronization within these populations are important mechanisms contributing to perception and cognition. In schizophrenia, perception and cognition are impaired. Aberrant gating of irrelevant sensory information, which has been related to altered oscillatory neural activity, presumably contributes to these impairments. However, the link between schizophrenia symptoms and sensory gating deficits, as reflected in oscillatory activity, is not clear. In this electroencephalography study, we used a paired-stimulus paradigm to investigate frequency-resolved oscillatory activity in 22 schizophrenia patients and 22 healthy controls. We found sensory gating deficits in patients compared to controls, as reflected in reduced gamma-band power and alpha-band phase synchrony difference between the first and the second auditory stimulus. We correlated these markers of neural activity with a five-factor model of the Positive and Negative Syndrome Scale. Gamma-band power sensory gating was positively correlated with positive symptoms. Moreover, alpha-band phase synchrony sensory gating was negatively correlated with negative symptoms. A cluster analysis revealed three schizophrenia phenotypes, characterized by (i) aberrant gamma-band power and high positive symptoms, (ii) aberrant alpha-band phase synchrony, low positive, and low negative symptom scores or (iii) by intact sensory gating and high negative symptoms. Our study demonstrates that aberrant neural synchronization, as reflected in gamma-band power and alpha-band phase synchrony, relates to the schizophrenia psychopathology. Different schizophrenia phenotypes express distinct levels of positive and negative symptoms as well as varying degrees of aberrant oscillatory neural activity. Identifying the individual phenotype might improve therapeutic interventions in schizophrenia. PMID:27014035

  6. Organic transistor memory with a charge storage molecular double-floating-gate monolayer.

    PubMed

    Tseng, Chiao-Wei; Huang, Ding-Chi; Tao, Yu-Tai

    2015-05-13

    A flexible, low-voltage, and nonvolatile memory device was fabricated by implanting a functional monolayer on an aluminum oxide dielectric surface in a pentacene-based organic transistor. The monolayer-forming molecule contains a phosphonic acid group as the anchoring moiety and a charge-trapping core group flanked between two alkyl chain spacers as the charge trapping site. The memory characteristics strongly depend on the monolayer used due to the localized charge-trapping capability for different core groups, including the diacetylenic (DA) unit as the hole carrier trap, the naphthalenetetracarboxyldiimide (ND) unit as the electron carrier trap, and the one with both DA and ND units present, respectively. The device with the monolayer carrying both DA and ND groups has a larger memory window than that for the one containing DA only and a longer retention time than that for the one containing DA or ND only, giving a memory window of 1.4 V and a retention time around 10(9) s. This device with hybrid organic monolayer/inorganic dielectrics also exhibited rather stable device characteristics upon bending of the polymeric substrate. PMID:25875747

  7. Taking electrons out of bioelectronics: bioprotonic memories and enzymatic logic gates (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Rolandi, Marco

    2015-10-01

    In living systems, protonic and ionic currents are the basis for all information processing. As such, artificial devices based on protonic and ionic currents offer an exciting opportunity for bioelectronics. Proton transport in nature is important for ATP oxidative phosphorylation, the HCVN1 voltage gated proton channel, light activated proton pumping in bacteriorhodopsin, and the proton conducting single water file of the antibiotic gramicidin. In these systems, protons move along hydrogen bond networks formed by water and the hydrated biomolecules (proton wires). We have previously demonstrated complementary H+- and OH-- FETs with acid and base doped biopolymer proton wires and PdHx proton conducting contacts. Here, I will discuss proton-conducting devices based oh highly conductive proton wires that emulate brain synapses, display memristive behaviour, and are connected to form shift registries. Furthermore, I will present the integration of these devices with enzymatic logic gates for integrated biotic-abiotic protonic information processing. Preliminary results on using these devices to affect biological function will be discussed.

  8. Arousal Cues Arousal-Related Material in Memory: Implications for Understanding Effects of Mood on Memory.

    ERIC Educational Resources Information Center

    Clark, Margaret S.; And Others

    1983-01-01

    Discusses research showing that material people learn when in a high arousal state and material they learn when in a normal arousal state is subsequently best recalled when they are in a similar arousal state. Speculates that this effect may partially underlie mood cuing, mood-related material from memory. (EKN)

  9. Categorical and associative relations increase false memory relative to purely associative relations.

    PubMed

    Coane, Jennifer H; McBride, Dawn M; Termonen, Miia-Liisa; Cutting, J Cooper

    2016-01-01

    The goal of the present study was to examine the contributions of associative strength and similarity in terms of shared features to the production of false memories in the Deese/Roediger-McDermott list-learning paradigm. Whereas the activation/monitoring account suggests that false memories are driven by automatic associative activation from list items to nonpresented lures, combined with errors in source monitoring, other accounts (e.g., fuzzy trace theory, global-matching models) emphasize the importance of semantic-level similarity, and thus predict that shared features between list and lure items will increase false memory. Participants studied lists of nine items related to a nonpresented lure. Half of the lists consisted of items that were associated but did not share features with the lure, and the other half included items that were equally associated but also shared features with the lure (in many cases, these were taxonomically related items). The two types of lists were carefully matched in terms of a variety of lexical and semantic factors, and the same lures were used across list types. In two experiments, false recognition of the critical lures was greater following the study of lists that shared features with the critical lure, suggesting that similarity at a categorical or taxonomic level contributes to false memory above and beyond associative strength. We refer to this phenomenon as a "feature boost" that reflects additive effects of shared meaning and association strength and is generally consistent with accounts of false memory that have emphasized thematic or feature-level similarity among studied and nonstudied representations. PMID:26250805

  10. Life Experience with Death: Relation to Death Attitudes and to the Use of Death-Related Memories

    ERIC Educational Resources Information Center

    Bluck, Susan; Dirk, Judith; Mackay, Michael M.; Hux, Ashley

    2008-01-01

    The study examines the relation of death experience to death attitudes and to autobiographical memory use. Participants (N = 52) completed standard death attitude measures and wrote narratives about a death-related autobiographical memory and (for comparison) a memory of a low point. Self-ratings of the memory narratives were used to assess their…

  11. Spatial Relational Memory in 9-Month-Old Macaque Monkeys

    ERIC Educational Resources Information Center

    Lavenex, Pierre; Lavenex, Pamela Banta

    2006-01-01

    This experiment assesses spatial and nonspatial relational memory in freely moving 9-mo-old and adult (11-13-yr-old) macaque monkeys ("Macaca mulatta"). We tested the use of proximal landmarks, two different objects placed at the center of an open-field arena, as conditional cues allowing monkeys to predict the location of food rewards hidden in…

  12. Working Memory and Intelligence Are Highly Related Constructs, but Why?

    ERIC Educational Resources Information Center

    Colom, Roberto; Abad, Francisco J.; Quiroga, M. Angeles; Shih, Pei Chun; Flores-Mendoza, Carmen

    2008-01-01

    Working memory and the general factor of intelligence (g) are highly related constructs. However, we still don't know why. Some models support the central role of simple short-term storage, whereas others appeal to executive functions like the control of attention. Nevertheless, the available empirical evidence does not suffice to get an answer,…

  13. The Relations Among Abuse, Depression, and Adolescents' Autobiographical Memory

    ERIC Educational Resources Information Center

    Johnson, Rebecca J.; Greenhoot, Andrea Follmer; Glisky, Elizabeth; McCloskey, Laura A.

    2005-01-01

    This study examined the relations among early and recent experiences with abuse, depression, and adolescents' autobiographical memory in a longitudinal study of family violence. Participants' (N = 134) exposure to violence was documented when they were 6 to 12 years old and again when they were 12 to 18 years old. The second assessment included…

  14. The relationship between task-related and subsequent memory effects.

    PubMed

    de Chastelaine, Marianne; Rugg, Michael D

    2014-08-01

    The primary aim of this fMRI study was to assess the proposal that negative subsequent memory effects-greater activity for later forgotten relative to later remembered study items-are localized to regions demonstrating task-negative effects, and hence to potential components of the default mode network. Additionally, we assessed whether positive subsequent memory effects overlapped with regions demonstrating task-positive effects. Eighteen participants were scanned while they made easy or difficult relational judgments on visually presented word pairs. Easy and hard task blocks were interleaved with fixation-only rest periods. In the later unscanned test phase, associative recognition judgments were required on intact word pairs (studied pairs), rearranged pairs (pairs formed from words presented on different study trials) and new pairs. Subsequent memory effects were identified by contrasting the activity elicited by study pairs that went on to be correctly endorsed as intact versus incorrectly endorsed as rearranged. Task effects were identified by contrasting all study items and rest blocks. Both task-negative and task-positive effects were evident in widespread cortical regions and negative and positive subsequent memory effects were generally confined to task-negative and task-positive regions respectively. However, subsequent memory effects could be identified in only a fraction of task-sensitive voxels and, unlike task effects, were insensitive to the difficulty manipulation. The findings for the negative subsequent memory effects are consistent with recent proposals that the default mode network is functionally heterogeneous, and suggest that these effects are not accurately characterized as reflections of the modulation of the network as a whole. PMID:24615858

  15. Cerebrovascular Damage Mediates Relations Between Aortic Stiffness and Memory.

    PubMed

    Cooper, Leroy L; Woodard, Todd; Sigurdsson, Sigurdur; van Buchem, Mark A; Torjesen, Alyssa A; Inker, Lesley A; Aspelund, Thor; Eiriksdottir, Gudny; Harris, Tamara B; Gudnason, Vilmundur; Launer, Lenore J; Mitchell, Gary F

    2016-01-01

    Aortic stiffness is associated with cognitive decline. Here, we examined the association between carotid-femoral pulse wave velocity and cognitive function and investigated whether cerebrovascular remodeling and parenchymal small vessel disease damage mediate the relation. Analyses were based on 1820 (60% women) participants in the Age, Gene/Environment Susceptibility-Reykjavik Study. Multivariable linear regression models adjusted for vascular and demographic confounders showed that higher carotid-femoral pulse wave velocity was related to lower memory score (standardized β: -0.071±0.023; P=0.002). Cerebrovascular resistance and white matter hyperintensities were each associated with carotid-femoral pulse wave velocity and memory (P<0.05). Together, cerebrovascular resistance and white matter hyperintensities (total indirect effect: -0.029; 95% CI, -0.043 to -0.017) attenuated the direct relation between carotid-femoral pulse wave velocity and memory (direct effect: -0.042; 95% CI, -0.087 to 0.003; P=0.07) and explained ≈41% of the observed effect. Our results suggest that in older adults, associations between aortic stiffness and memory are mediated by pathways that include cerebral microvascular remodeling and microvascular parenchymal damage. PMID:26573713

  16. Memory for Items and Relationships among Items Embedded in Realistic Scenes: Disproportionate Relational Memory Impairments in Amnesia

    PubMed Central

    Hannula, Deborah E.; Tranel, Daniel; Allen, John S.; Kirchhoff, Brenda A.; Nickel, Allison E.; Cohen, Neal J.

    2014-01-01

    Objective The objective of this study was to examine the dependence of item memory and relational memory on medial temporal lobe (MTL) structures. Patients with amnesia, who either had extensive MTL damage or damage that was relatively restricted to the hippocampus, were tested, as was a matched comparison group. Disproportionate relational memory impairments were predicted for both patient groups, and those with extensive MTL damage were also expected to have impaired item memory. Method Participants studied scenes, and were tested with interleaved two-alternative forced-choice probe trials. Probe trials were either presented immediately after the corresponding study trial (lag 1), five trials later (lag 5), or nine trials later (lag 9) and consisted of the studied scene along with a manipulated version of that scene in which one item was replaced with a different exemplar (item memory test) or was moved to a new location (relational memory test). Participants were to identify the exact match of the studied scene. Results As predicted, patients were disproportionately impaired on the test of relational memory. Item memory performance was marginally poorer among patients with extensive MTL damage, but both groups were impaired relative to matched comparison participants. Impaired performance was evident at all lags, including the shortest possible lag (lag 1). Conclusions The results are consistent with the proposed role of the hippocampus in relational memory binding and representation, even at short delays, and suggest that the hippocampus may also contribute to successful item memory when items are embedded in complex scenes. PMID:25068665

  17. A 0.5-V Six-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Tanakamaru, Shuhei; Hatanaka, Teruyoshi; Yajima, Ryoji; Miyaji, Kousuke; Takahashi, Mitsue; Sakai, Shigeki; Takeuchi, Ken

    2010-12-01

    A 0.5 V six-transistor static random access memory (6T-SRAM) with ferroelectric-gate field-effect-transistors (Fe-FETs) is proposed and experimentally demonstrated for the first time. During the read and the hold, the threshold voltage (VTH) of Fe-FETs automatically changes to increase the static noise margin (SNM) by 60%. During the stand-by, the VTH of the proposed SRAM cell increases to decrease the leakage current by 42%. In case of the read, the VTH of the read transistor decreases and increases the cell read current to achieve the fast read. During the write, the VTH of the SRAM cell dynamically changes and assist the cell data to flip, realizing a write assist function. The enlarged SNM realizes the VDD reduction by 0.11 V, which decreases the active power by 32%. The proposed SRAM layout is the same as the conventional 6T-SRAM and there is no area penalty.

  18. Etiological Distinction of Working Memory Components in Relation to Mathematics.

    PubMed

    Lukowski, Sarah L; Soden, Brooke; Hart, Sara A; Thompson, Lee A; Kovas, Yulia; Petrill, Stephen A

    2014-11-01

    Working memory has been consistently associated with mathematics achievement, although the etiology of these relations remains poorly understood. The present study examined the genetic and environmental underpinnings of math story problem solving, timed calculation, and untimed calculation alongside working memory components in 12-year-old monozygotic (n = 105) and same-sex dizygotic (n = 143) twin pairs. Results indicated significant phenotypic correlation between each working memory component and all mathematics outcomes (r = 0.18 - 0.33). Additive genetic influences shared between the visuo-spatial sketchpad and mathematics achievement was significant, accounting for roughly 89% of the observed correlation. In addition, genetic covariance was found between the phonological loop and math story problem solving. In contrast, despite there being a significant observed relationship between phonological loop and timed and untimed calculation, there was no significant genetic or environmental covariance between the phonological loop and timed or untimed calculation skills. Further analyses indicated that genetic overlap between the visuo-spatial sketchpad and math story problem solving and math fluency was distinct from general genetic factors, whereas g, phonological loop, and mathematics shared generalist genes. Thus, although each working memory component was related to mathematics, the etiology of their relationships may be distinct. PMID:25477699

  19. Screen memory: its importance to object relations and transference.

    PubMed

    Reichbart, Richard

    2008-06-01

    A screen memory of an obsessive and narcissistic man, reported early in psychoanalysis, both represented and disguised the patient's oedipal conflict, incestuous wishes, and sibling rivalry. It symbolized for him his relationship with his mother and was treated by him, in a repetitive and fetishistic manner throughout treatment, as the reason for his bitterness toward life, his sense of entitlement, his narcissism, and his distrust of women. In the transference, the memory-far from being inert- constantly played an active role in his wishes and disappointments regarding the analyst, and in his fantasied oedipal triumph over him. As the analysis progressed, and after years of treatment, the encapsulated nature of this memory began to give way to the patient's growing awareness of his oedipal wishes, the full range of his feelings toward his mother, and his sense of abandonment by her. The nature of screen memory is explored, including how it relates to a patient's personality and use of the past in general, how it may figure in the development of a person's object relations, and the decisive role it may play throughout a treatment. PMID:18515702

  20. Etiological Distinction of Working Memory Components in Relation to Mathematics

    PubMed Central

    Lukowski, Sarah L.; Soden, Brooke; Hart, Sara A.; Thompson, Lee A.; Kovas, Yulia; Petrill, Stephen A.

    2014-01-01

    Working memory has been consistently associated with mathematics achievement, although the etiology of these relations remains poorly understood. The present study examined the genetic and environmental underpinnings of math story problem solving, timed calculation, and untimed calculation alongside working memory components in 12-year-old monozygotic (n = 105) and same-sex dizygotic (n = 143) twin pairs. Results indicated significant phenotypic correlation between each working memory component and all mathematics outcomes (r = 0.18 – 0.33). Additive genetic influences shared between the visuo-spatial sketchpad and mathematics achievement was significant, accounting for roughly 89% of the observed correlation. In addition, genetic covariance was found between the phonological loop and math story problem solving. In contrast, despite there being a significant observed relationship between phonological loop and timed and untimed calculation, there was no significant genetic or environmental covariance between the phonological loop and timed or untimed calculation skills. Further analyses indicated that genetic overlap between the visuo-spatial sketchpad and math story problem solving and math fluency was distinct from general genetic factors, whereas g, phonological loop, and mathematics shared generalist genes. Thus, although each working memory component was related to mathematics, the etiology of their relationships may be distinct. PMID:25477699

  1. Can DRYAD explain age-related associative memory deficits?

    PubMed

    Smyth, Andrea C; Naveh-Benjamin, Moshe

    2016-02-01

    A recent interesting theoretical account of aging and memory judgments, the DRYAD (density of representations yields age-related deficits; Benjamin, 2010; Benjamin, Diaz, Matzen, & Johnson, 2012), attributes the extensive findings of disproportional age-related deficits in memory for source, context, and associations, to a global decline in memory fidelity. It is suggested that this global deficit, possibly due to a decline in attentional processes, is moderated by weak representation of contextual information to result in disproportional age-related declines. In the current article, we evaluate the DRYAD model, comparing it to specific age-related deficits theories, in particular, the ADH (associative deficit hypothesis, Naveh-Benjamin, 2000). We question some of the main assumptions/hypotheses of DRYAD in light of data reported in the literature, and we directly assess the role of attention in age-related deficits by manipulations of divided attention and of the instructions regarding what to pay attention to in 2 experiments (one from the literature and a new one). The results of these experiments fit the predictions of the ADH and do not support the main assumption/hypotheses of DRYAD. PMID:25961878

  2. When memory meets beauty: Insights from event-related potentials.

    PubMed

    Marzi, T; Viggiano, M P

    2010-05-01

    Facial attractiveness plays a key role in human social and affective behavior. To study the time course of the neural processing of attractiveness and its influence on recognition memory we investigated the event-related potentials (ERPs) elicited in an old/new recognition task in response to faces with a neutral expression that, at encoding, were rated for their attractiveness. Highly attractive faces elicited a specific early positive-going component on frontal sites; in addition, with respect to less attractive faces, they elicited larger later components related to structural encoding and recognition memory. All in all, our results show that facial attractiveness, independently from facial expression, modulates face processing throughout all stages from encoding to retrieval. PMID:20109520

  3. 5 V driving organic non-volatile memory transistors with poly(vinyl alcohol) gate insulator and poly(3-hexylthiophene) channel layers

    NASA Astrophysics Data System (ADS)

    Nam, Sungho; Seo, Jooyeok; Kim, Hwajeong; Kim, Youngkyoo

    2015-10-01

    Organic non-volatile memory devices were fabricated by employing organic field-effect transistors (OFETs) with poly(vinyl alcohol) (PVA) and poly(3-hexylthiophene) as a gate insulating layer and a channel layer, respectively. The 10-nm-thick nickel layers were inserted for better charge injection between the channel layer and the top source/drain electrodes. The fabricated PVA-OFET memory devices could be operated at low voltages (≤5 V) and showed pronounced hysteresis characteristics in the transfer curves, even though very small hysteresis was measured from the output curves. The degree of hysteresis was considerably dependent on the ratio of channel width (W) to channel length (L). The PVA-OFET memory device with the smaller W/L ratio (25) exhibited better retention characteristics upon 700 cycles of writing-reading-erasing-reading operations, which was assigned to the stability of charged states in devices.

  4. A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory

    PubMed Central

    2014-01-01

    This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. The advantages of this device include the simplicity of its use and the ease with which it can be embedded in Si wafer, glass, and flexible substrates. This device exhibits excellent retention, with a memory window maintained 2 V after 104 s. By extrapolation, 95% of the original charge can be stored for 10 years. In the future, this device will be applied to multi-layer Si ICs in fully functional systems on panels, active-matrix liquid-crystal displays, and three-dimensional (3D) stacked flash memory. PMID:25404873

  5. Olfactory memory in the old and very old: relations to episodic and semantic memory and APOE genotype.

    PubMed

    Larsson, Maria; Hedner, Margareta; Papenberg, Goran; Seubert, Janina; Bäckman, Lars; Laukka, Erika J

    2016-02-01

    The neuroanatomical organization that underlies olfactory memory is different from that of other memory types. The present work examines olfactory memory in an elderly population-based sample (Swedish National Study on Aging and Care in Kungsholmen) aged 60-100 years (n = 2280). We used structural equation modeling to investigate whether olfactory memory in old age is best conceptualized as a distinct category, differentiated from episodic and semantic memory. Further, potential olfactory dedifferentiation and genetic associations (APOE) to olfactory function in late senescence were investigated. Results are in support of a 3-factor solution where olfactory memory, as indexed by episodic odor recognition and odor identification, is modeled separately from episodic and semantic memory for visual and verbal information. Increasing age was associated with poorer olfactory memory performance, and observed age-related deficits were further exacerbated for carriers of the APOE ε4 allele; these effects tended to be larger for olfactory memory compared to episodic and semantic memory pertaining to other sensory systems (vision, auditory). Finally, stronger correlations between olfactory and episodic memory, indicating dedifferentiation, were observed in the older age groups. PMID:26827650

  6. Age-related differences in memory and in the memory effects of nootropic drugs.

    PubMed

    Petkov, V D; Mosharrof, A H; Petkov, V V; Kehayov, R A

    1990-01-01

    In experiments of 2-, 5-, 10- and 22-month old rats, using active avoidance with punishment reinforcement (maze and shuttle-box) and passive avoidance (step-down), we found that acquisition and retention in aged rats were impaired significantly or only as a trend. The nootropics adafenoxate, meclofenoxate, citicholine, aniracetam and the standardized ginseng extract administered orally for 7 to 10 days usually facilitated learning and improved memory in the rats of all ages. By some of the indices used the drugs gave more pronounced favourable effects in old rats, while by others better effects were observed in young or adult rats. The results demonstrate significant age-related differences in learning and memory in rats and in the effects of nootropic drugs on these processes. PMID:2281798

  7. Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

    PubMed

    Kim, So-Jung; Jeon, Da-Bin; Park, Jung-Ho; Ryu, Min-Ki; Yang, Jong-Heon; Hwang, Chi-Sun; Kim, Gi-Heon; Yoon, Sung-Min

    2015-03-01

    Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 °C. To improve the process compatibility of the synthethic paper substrate, an Al2O3 thin film was introduced as adhesion and barrier layers by atomic layer deposition. The dielectric properties of biomaterial albumen gate insulator were also enhanced by the preparation of Al2O3 capping layer. The nonvolatile bistabilities were realized by the switching phenomena of residual polarization within the albumen thin film. The fabricated device exhibited a counterclockwise hysteresis with a memory window of 11.8 V, high on/off ratio of approximately 1.1 × 10(6), and high saturation mobility (μsat) of 11.5 cm(2)/(V s). Furthermore, these device characteristics were not markedly degraded even after the delamination and under the bending situration. When the curvature radius was set as 5.3 cm, the ION/IOFF ratio and μsat were obtained to be 5.9 × 10(6) and 7.9 cm(2)/(V s), respectively. PMID:25679117

  8. Medial temporal lobe viscoelasticity and relational memory performance.

    PubMed

    Schwarb, Hillary; Johnson, Curtis L; McGarry, Matthew D J; Cohen, Neal J

    2016-05-15

    Structural and functional imaging studies have been among converging lines of evidence demonstrating the importance of the hippocampus in successful memory performance. The advent of a novel neuroimaging technique - magnetic resonance elastography (MRE) - now makes it possible for us to investigate the relationship between the microstructural integrity of hippocampal tissue and successful memory processing. Mechanical properties of brain tissue estimated with MRE provide a measure of the integrity of the underlying tissue microstructure and have proven to be sensitive measures of tissue health in neurodegeneration. However, until recently, MRE methods lacked sufficient resolution necessary to accurately examine specific neuroanatomical structures in the brain, and thus could not contribute to examination of specific structure-function relationships. In this study, we took advantage of recent developments in MRE spatial resolution and mechanical inversion techniques to measure the viscoelastic properties of the human hippocampus in vivo, and investigated how these properties reflect hippocampal function. Our data reveal a strong relationship between relative elastic/viscous behavior of the hippocampus and relational memory performance (N=20). This is the first report linking the mechanical properties of brain tissue with functional performance. PMID:26931816

  9. Subjective aspects of working memory performance: memoranda-related imagery.

    PubMed

    Jantz, Tiffany K; Tomory, Jessica J; Merrick, Christina; Cooper, Shanna; Gazzaley, Adam; Morsella, Ezequiel

    2014-04-01

    Although it is well accepted that working memory (WM) is intimately related to consciousness, little research has illuminated the liaison between the two phenomena. To investigate this under-explored nexus, we used an imagery monitoring task to investigate the subjective aspects of WM performance. Specifically, in two experiments, we examined the effects on consciousness of (a) holding in mind information having a low versus high memory load, and (b) holding memoranda in mind during the presentation of distractors (e.g., visual stimuli associated with a response incompatible with that of the memoranda). Higher rates of rehearsal (conscious imagery) occurred in the high load and distractor conditions than in comparable control conditions. Examination of the temporal properties of the rehearsal-based imagery revealed that, across subjects, imagery events occurred evenly throughout the delay. We hope that future variants of this new imagery monitoring task will reveal additional insights about WM, consciousness, and action control. PMID:24583457

  10. Affective recognition memory processing and event-related brain potentials

    PubMed Central

    Kaestner, Erik J.

    2011-01-01

    Recognition memory was examined for visual affective stimuli using behavioral and event-related brain potential (ERP) measures. Images from the International Affective Picture System (IAPS) that varied systematically in arousal level (low, high) and valence direction (unpleasant, pleasant) were first viewed passively. Then, during a response phase, the original images were intermixed with an equal number of new images and presented, and participants were instructed to press a button to indicate whether each stimulus picture was previously viewed (target) or new (foil). Participants were more sensitive to unpleasant- than to pleasant-valence stimuli and were biased to respond to high-arousal unpleasant stimuli as targets, whether the stimuli were previously viewed or new. Response times (RTs) to target stimuli were systematically affected by valence, whereas RTs to foil stimuli were influenced by arousal level. ERP component amplitudes were generally larger for high than for low arousal levels. The P300 (late positive component) amplitude was largest for high-arousal unpleasant target images. These and other amplitude effects suggest that high-arousal unpleasant stimuli engage a privileged memory-processing route during stimulus processing. Theoretical relationships between affective and memory processes are discussed. PMID:21384231

  11. Cognitive Dissonance Resolution Is Related to Episodic Memory

    PubMed Central

    Maillet, Mathurin; Naccache, Lionel

    2014-01-01

    The notion that our past choices affect our future behavior is certainly one of the most influential concepts of social psychology since its first experimental report in the 50 s, and its initial theorization by Festinger within the “cognitive dissonance” framework. Using the free choice paradigm (FCP), it was shown that choosing between two similarly rated items made subjects reevaluate the chosen items as more attractive and the rejected items as less attractive. However, in 2010 a major work by Chen and Risen revealed a severe statistical flaw casting doubt on most previous studies. Izuma and colleagues (2010) supplemented the traditional FCP with original control conditions and concluded that the effect observed could not be solely attributed to this methodological flaw. In the present work we aimed at establishing the existence of genuine choice-induced preference change and characterizing this effect. To do so, we replicated Izuma et al.’ study and added a new important control condition which was absent from the original study. Moreover, we added a memory test in order to measure the possible relation between episodic memory of choices and observed behavioral effects. In two experiments we provide experimental evidence supporting genuine choice-induced preference change obtained with FCP. We also contribute to the understanding of the phenomenon by showing that choice-induced preference change effects are strongly correlated with episodic memory. PMID:25264950

  12. Cognitive dissonance resolution is related to episodic memory.

    PubMed

    Salti, Moti; El Karoui, Imen; Maillet, Mathurin; Naccache, Lionel

    2014-01-01

    The notion that our past choices affect our future behavior is certainly one of the most influential concepts of social psychology since its first experimental report in the 50 s, and its initial theorization by Festinger within the "cognitive dissonance" framework. Using the free choice paradigm (FCP), it was shown that choosing between two similarly rated items made subjects reevaluate the chosen items as more attractive and the rejected items as less attractive. However, in 2010 a major work by Chen and Risen revealed a severe statistical flaw casting doubt on most previous studies. Izuma and colleagues (2010) supplemented the traditional FCP with original control conditions and concluded that the effect observed could not be solely attributed to this methodological flaw. In the present work we aimed at establishing the existence of genuine choice-induced preference change and characterizing this effect. To do so, we replicated Izuma et al.' study and added a new important control condition which was absent from the original study. Moreover, we added a memory test in order to measure the possible relation between episodic memory of choices and observed behavioral effects. In two experiments we provide experimental evidence supporting genuine choice-induced preference change obtained with FCP. We also contribute to the understanding of the phenomenon by showing that choice-induced preference change effects are strongly correlated with episodic memory. PMID:25264950

  13. Is sleep-related verbal memory consolidation impaired in sleepwalkers?

    PubMed

    Uguccioni, Ginevra; Pallanca, Olivier; Golmard, Jean-Louis; Leu-Semenescu, Smaranda; Arnulf, Isabelle

    2015-04-01

    In order to evaluate verbal memory consolidation during sleep in subjects experiencing sleepwalking or sleep terror, 19 patients experiencing sleepwalking/sleep terror and 19 controls performed two verbal memory tasks (16-word list from the Free and Cued Selective Reminding Test, and a 220- and 263-word modified story recall test) in the evening, followed by nocturnal video polysomnography (n = 29) and morning recall (night-time consolidation after 14 h, n = 38). The following morning, they were given a daytime learning task using the modified story recall test in reverse order, followed by an evening recall test after 9 h of wakefulness (daytime consolidation, n = 38). The patients experiencing sleepwalking/sleep terror exhibited more frequent awakenings during slow-wave sleep and longer wakefulness after sleep onset than the controls. Despite this reduction in sleep quality among sleepwalking/sleep terror patients, they improved their scores on the verbal tests the morning after sleep compared with the previous evening (+16 ± 33%) equally well as the controls (+2 ± 13%). The performance of both groups worsened during the daytime in the absence of sleep (-16 ± 15% for the sleepwalking/sleep terror group and -14 ± 11% for the control group). There was no significant correlation between the rate of memory consolidation and any of the sleep measures. Seven patients experiencing sleepwalking also sleep-talked during slow-wave sleep, but their sentences were unrelated to the tests or the list of words learned during the evening. In conclusion, the alteration of slow-wave sleep during sleepwalking/sleep terror does not noticeably impact on sleep-related verbal memory consolidation. PMID:25212397

  14. Meaning-making in memories: a comparison of memories of death-related and low point life experiences.

    PubMed

    Mackay, Michael M; Bluck, Susan

    2010-09-01

    Because of their extensive experience with death and dying, hospice volunteers may be more successful at engaging in meaning-making regarding their death-related experiences than their low point life experiences (e.g., job loss). Consequently, their memories of death-related experiences will manifest more meaning-making strategies (e.g., bendfit-finding) than their low point memories. Fifty-two hospice volunteers wrote memory narratives of death-related and low point experiences and provided ratings of their memories. Results show that death memory narratives exhibit more meaning-making strategies, are rated as more emotionally positive, and are more frequently rehearsed. The long-term significance of the use of meaning-making strategies is discussed. PMID:24482847

  15. Ageing-related stereotypes in memory: When the beliefs come true.

    PubMed

    Bouazzaoui, Badiâa; Follenfant, Alice; Ric, François; Fay, Séverine; Croizet, Jean-Claude; Atzeni, Thierry; Taconnat, Laurence

    2016-05-01

    Age-related stereotype concerns culturally shared beliefs about the inevitable decline of memory with age. In this study, stereotype priming and stereotype threat manipulations were used to explore the impact of age-related stereotype on metamemory beliefs and episodic memory performance. Ninety-two older participants who reported the same perceived memory functioning were divided into two groups: a threatened group and a non-threatened group (control). First, the threatened group was primed with an ageing stereotype questionnaire. Then, both groups were administered memory complaints and memory self-efficacy questionnaires to measure metamemory beliefs. Finally, both groups were administered the Logical Memory task to measure episodic memory, for the threatened group the instructions were manipulated to enhance the stereotype threat. Results indicated that the threatened individuals reported more memory complaints and less memory efficacy, and had lower scores than the control group on the logical memory task. A multiple mediation analysis revealed that the stereotype threat effect on the episodic memory performance was mediated by both memory complaints and memory self-efficacy. This study revealed that stereotype threat impacts belief in one's own memory functioning, which in turn impairs episodic memory performance. PMID:26057336

  16. Awareness of Memory Ability and Change: (In)Accuracy of Memory Self-Assessments in Relation to Performance

    PubMed Central

    Rickenbach, Elizabeth Hahn; Agrigoroaei, Stefan; Lachman, Margie E.

    2015-01-01

    Little is known about subjective assessments of memory abilities and decline among middle-aged adults or their association with objective memory performance in the general population. In this study we examined self-ratings of memory ability and change in relation to episodic memory performance in two national samples of middle-aged and older adults from the Midlife in the United States study (MIDUS II in 2005-06) and the Health and Retirement Study (HRS; every two years from 2002 to 2012). MIDUS (Study 1) participants (N=3,581) rated their memory compared to others their age and to themselves five years ago; HRS (Study 2) participants (N=14,821) rated their current memory and their memory compared to two years ago, with up to six occasions of longitudinal data over ten years. In both studies, episodic memory performance was the total number of words recalled in immediate and delayed conditions. When controlling for demographic and health correlates, self-ratings of memory abilities, but not subjective change, were related to performance. We examined accuracy by comparing subjective and objective memory ability and change. More than one third of the participants across the studies had self-assessments that were inaccurate relative to their actual level of performance and change, and accuracy differed as a function of demographic and health factors. Further understanding of self-awareness of memory abilities and change beginning in midlife may be useful for identifying early warning signs of decline, with implications regarding policies and practice for early detection and treatment of cognitive impairment. PMID:25821529

  17. Death-Related versus Fond Memories of a Deceased Attachment Figure: Examining Emotional Arousal

    ERIC Educational Resources Information Center

    Rochman, Daniel

    2013-01-01

    Grieving is infused by memories and emotions. In this study, bereaved participants recalled either death-related or fond memories of their loved ones. Their emotional arousal was examined via physiologic and voice analytic measures. Both death-related and fond memories generated an acoustic profile indicative of sadness (reflected by voice quality…

  18. The Differential Relations between Verbal, Numerical and Spatial Working Memory Abilities and Children's Reading Comprehension

    ERIC Educational Resources Information Center

    Oakhill, Jane; Yuill, Nicola; Garnham, Alan

    2011-01-01

    Working memory predicts children's reading comprehension but it is not clear whether this relation is due to a modality-specific or general working memory. This study, which investigated the relations between children's reading skills and working memory (WM) abilities in 3 modalities, extends previous work by including measures of both reading…

  19. Decay of Iconic Memory Traces Is Related to Psychometric Intelligence: A Fixed-Links Modeling Approach

    ERIC Educational Resources Information Center

    Miller, Robert; Rammsayer, Thomas H.; Schweizer, Karl; Troche, Stefan J.

    2010-01-01

    Several memory processes have been examined regarding their relation to psychometric intelligence with the exception of sensory memory. This study examined the relation between decay of iconic memory traces, measured with a partial-report task, and psychometric intelligence, assessed with the Berlin Intelligence Structure test, in 111…

  20. Predicting fluctuations in widespread interest: memory decay and goal-related memory accessibility in internet search trends.

    PubMed

    Masicampo, E J; Ambady, Nalini

    2014-02-01

    Memory and interest respond in similar ways to people's shifting needs and motivations. We therefore tested whether memory and interest might produce similar, observable patterns in people's responses over time. Specifically, the present studies examined whether fluctuations in widespread interest (as measured by Internet search trends) resemble two well-established memory patterns: memory decay and goal-related memory accessibility. We examined national and international events (e.g., Nobel Prize selections, holidays) that produced spikes in widespread interest in certain people and foods. When the events that triggered widespread interest were incidental (e.g., the death of a celebrity), widespread interest conformed to memory decay patterns: It rose quickly, fell slowly according to a power function, and was higher after the event than before it. When the events that triggered widespread interest were goal related (e.g., political elections), widespread interest conformed to patterns of goal-related memory accessibility: It rose slowly, fell quickly according to a sigmoid function, and was lower after the event than before it. Fluctuations in widespread interest over time are thus similar to standard memory patterns observed at the individual level due perhaps to common mechanisms and functions. PMID:23127417

  1. Simulation of Nanoscale Two-Bit Not-And-type Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory Devices with a Separated Double-Gate Fin Field Effect Transistor Structure Containing Different Tunneling Oxide Thicknesses

    NASA Astrophysics Data System (ADS)

    Oh, Se Woong; Park, Sang Su; Kim, Dong Hun; Kim, Hyun Woo; Kim, Tae Whan

    2009-06-01

    Not-and (NAND)-type silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory (NVM) devices with a separated double-gate (SDG) Fin field effect transistor structure were proposed to reduce the unit cell size of such memory devices and increase their memory density in comparison with that of conventional NVM devices. The proposed memory device consisted of a pair of control gates separated along the length of the Fin channel direction. Each SDG had a different thickness of the tunneling oxide to operate the proposed memory device as a two-bit/cell device. A technology computer-aided design simulation was performed to investigate the program/erase and two-bit characteristics. The simulation results show that the proposed devices can be used to increase the scaling down capability and charge storage density of NAND-type SONOS NVM devices.

  2. Alzheimer's disease and age-related memory decline (preclinical).

    PubMed

    Terry, Alvin V; Callahan, Patrick M; Hall, Brandon; Webster, Scott J

    2011-08-01

    An unfortunate result of the rapid rise in geriatric populations worldwide is the increasing prevalence of age-related cognitive disorders such as Alzheimer's disease (AD). AD is a devastating neurodegenerative illness that is characterized by a profound impairment of cognitive function, marked physical disability, and an enormous economic burden on the afflicted individual, caregivers, and society in general. The rise in elderly populations is also resulting in an increase in individuals with related (potentially treatable) conditions such as "Mild Cognitive Impairment" (MCI) which is characterized by a less severe (but abnormal) level of cognitive impairment and a high-risk for developing dementia. Even in the absence of a diagnosable disorder of cognition (e.g., AD and MCI), the perception of increased forgetfulness and declining mental function is a clear source of apprehension in the elderly. This is a valid concern given that even a modest impairment of cognitive function is likely to be associated with significant disability in a rapidly evolving, technology-based society. Unfortunately, the currently available therapies designed to improve cognition (i.e., for AD and other forms of dementia) are limited by modest efficacy and adverse side effects, and their effects on cognitive function are not sustained over time. Accordingly, it is incumbent on the scientific community to develop safer and more effective therapies that improve and/or sustain cognitive function in the elderly allowing them to remain mentally active and productive for as long as possible. As diagnostic criteria for memory disorders evolve, the demand for pro-cognitive therapeutic agents is likely to surpass AD and dementia to include MCI and potentially even less severe forms of memory decline. The purpose of this review is to provide an overview of the contemporary therapeutic targets and preclinical pharmacologic approaches (with representative drug examples) designed to enhance memory

  3. Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input

    NASA Astrophysics Data System (ADS)

    Lu, Bin; Cheng, Xiaomin; Feng, Jinlong; Guan, Xiawei; Miao, Xiangshui

    2016-07-01

    Nonvolatile memory devices or circuits that can implement both storage and calculation are a crucial requirement for the efficiency improvement of modern computer. In this work, we realize logic functions by using [GeTe/Sb2Te3]n super lattice phase change memory (PCM) cell in which higher threshold voltage is needed for phase change with a magnetic field applied. First, the [GeTe/Sb2Te3]n super lattice cells were fabricated and the R-V curve was measured. Then we designed the logic circuits with the super lattice PCM cell verified by HSPICE simulation and experiments. Seven basic logic functions are first demonstrated in this letter; then several multi-input logic gates are presented. The proposed logic devices offer the advantages of simple structures and low power consumption, indicating that the super lattice PCM has the potential in the future nonvolatile central processing unit design, facilitating the development of massive parallel computing architecture.

  4. Memory.

    ERIC Educational Resources Information Center

    McKean, Kevin

    1983-01-01

    Discusses current research (including that involving amnesiacs and snails) into the nature of the memory process, differentiating between and providing examples of "fact" memory and "skill" memory. Suggests that three brain parts (thalamus, fornix, mammilary body) are involved in the memory process. (JN)

  5. Integrative and semantic relations equally alleviate age-related associative memory deficits.

    PubMed

    Badham, Stephen P; Estes, Zachary; Maylor, Elizabeth A

    2012-03-01

    Two experiments compared effects of integrative and semantic relations between pairs of words on lexical and memory processes in old age. Integrative relations occur when two dissimilar and unassociated words are linked together to form a coherent phrase (e.g., horse-doctor). In Experiment 1, older adults completed a lexical-decision task where prime and target words were related either integratively or semantically. The two types of relation both facilitated responses compared to a baseline condition, demonstrating that priming can occur in older adults with minimal preexisting associations between primes and targets. In Experiment 2, young and older adults completed a cued recall task with integrative, semantic, and unrelated word pairs. Both integrative and semantic pairs showed significantly smaller age differences in associative memory compared to unrelated pairs. Integrative relations facilitated older adults' memory to a similar extent as semantic relations despite having few preexisting associations in memory. Integratability of stimuli is therefore a new factor that reduces associative deficits in older adults, most likely by supporting encoding and retrieval mechanisms. PMID:21639644

  6. Relation of Physical Activity to Memory Functioning in Older Adults: The Memory Workout Program.

    ERIC Educational Resources Information Center

    Rebok, George W.; Plude, Dana J.

    2001-01-01

    The Memory Workout, a CD-ROM program designed to help older adults increase changes in physical and cognitive activity influencing memory, was tested with 24 subjects. Results revealed a significant relationship between exercise time, exercise efficacy, and cognitive function, as well as interest in improving memory and physical activity.…

  7. Perceptual abnormalities related to sensory gating deficit are core symptoms in adults with ADHD.

    PubMed

    Micoulaud-Franchi, Jean-Arthur; Lopez, Régis; Vaillant, Florence; Richieri, Raphaëlle; El-Kaim, Alexandre; Bioulac, Stéphanie; Philip, Pierre; Boyer, Laurent; Lancon, Christophe

    2015-12-15

    This study investigated and compared perceptual abnormalities related to sensory gating deficit in adult patients with Attention Deficit Disorder with Hyperactivity (A-ADHD) and adult patients with schizophrenia. Subjects were evaluated with the Sensory Gating Inventory (SGI). We compared SGI scores between patients with A-ADHD, patients with schizophrenia and healthy subjects. We also assessed the relationship between SGI scores and clinical symptoms, and evaluated the ability of the SGI to detect perceptual abnormalities in A-ADHD. Seventy adult patients with ADHD reported higher SGI scores than the 70 healthy subjects and the 70 patients with schizophrenia. The inattention factor of the ASRS correlated significantly with the overall SGI score. The ROC AUC for the overall SGI score in the A-ADHD group (versus the healthy group) illustrated good performance. The findings suggest that i) perceptual abnormalities are core symptoms of adult patients with ADHD and ii) the attention of patients with A-ADHD may be involuntarily drowned by many irrelevant environmental stimuli leading to their impaired attention on relevant stimuli. They also confirm that the SGI could be a useful self-report instrument to diagnose the clinical features of A-ADHD. PMID:26416589

  8. Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

    NASA Astrophysics Data System (ADS)

    Yoon, Sung-Min; Yang, Shin-Hyuk; Park, Sang-Hee Ko; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; Hwang, Chi-Sun; Yu, Byoung-Gon

    2009-12-01

    Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al2O3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8 V at the gate voltage of -10 to 12 V, and 107 on/off ratio, and a gate leakage current of 10-11 A.

  9. Young and Older Adults’ Beliefs about Effective Ways to Mitigate Age-Related Memory Decline

    PubMed Central

    Horhota, Michelle; Lineweaver, Tara; Ositelu, Monique; Summers, Kristi; Hertzog, Christopher

    2013-01-01

    This study investigated whether young and older adults vary in their beliefs about the impact of various mitigating factors on age-related memory decline. Eighty young (ages 18–23) and eighty older (ages 60–82) participants reported their beliefs about their own memory abilities and the strategies that they use in their everyday lives to attempt to control their memory. Participants also reported their beliefs about memory change with age for hypothetical target individuals who were described as using (or not using) various means to mitigate memory decline. There were no age differences in personal beliefs about control over current or future memory ability. However, the two age groups differed in the types of strategies they used in their everyday life to control their memory. Young adults were more likely to use internal memory strategies, whereas older adults were more likely to focus on cognitive exercise and maintaining physical health as ways to optimize their memory ability. There were no age differences in rated memory change across the life span in hypothetical individuals. Both young and older adults perceived strategies related to improving physical and cognitive health as effective means of mitigating memory loss with age, whereas internal memory strategies were perceived as less effective means for controlling age-related memory decline. PMID:22082012

  10. Entropic Uncertainty Relation and Information Exclusion Relation for multiple measurements in the presence of quantum memory.

    PubMed

    Zhang, Jun; Zhang, Yang; Yu, Chang-shui

    2015-01-01

    The Heisenberg uncertainty principle shows that no one can specify the values of the non-commuting canonically conjugated variables simultaneously. However, the uncertainty relation is usually applied to two incompatible measurements. We present tighter bounds on both entropic uncertainty relation and information exclusion relation for multiple measurements in the presence of quantum memory. As applications, three incompatible measurements on Werner state and Horodecki's bound entangled state are investigated in details. PMID:26118488

  11. Entropic Uncertainty Relation and Information Exclusion Relation for multiple measurements in the presence of quantum memory

    PubMed Central

    Zhang, Jun; Zhang, Yang; Yu, Chang-shui

    2015-01-01

    The Heisenberg uncertainty principle shows that no one can specify the values of the non-commuting canonically conjugated variables simultaneously. However, the uncertainty relation is usually applied to two incompatible measurements. We present tighter bounds on both entropic uncertainty relation and information exclusion relation for multiple measurements in the presence of quantum memory. As applications, three incompatible measurements on Werner state and Horodecki’s bound entangled state are investigated in details. PMID:26118488

  12. Entropic Uncertainty Relation and Information Exclusion Relation for multiple measurements in the presence of quantum memory

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Zhang, Yang; Yu, Chang-Shui

    2015-06-01

    The Heisenberg uncertainty principle shows that no one can specify the values of the non-commuting canonically conjugated variables simultaneously. However, the uncertainty relation is usually applied to two incompatible measurements. We present tighter bounds on both entropic uncertainty relation and information exclusion relation for multiple measurements in the presence of quantum memory. As applications, three incompatible measurements on Werner state and Horodecki’s bound entangled state are investigated in details.

  13. Repetition Priming in Adults with Williams Syndrome: Age-Related Dissociation between Implicit and Explicit Memory

    ERIC Educational Resources Information Center

    Krinsky-McHale, Sharon J.; Kittler, Phyllis; Brown, W. Ted; Jenkins, Edmund C.; Devenny, Darlynne A.

    2005-01-01

    We examined implicit and explicit memory in adults with Williams syndrome. An age-related dissociation was found; repetition priming (reflecting implicit memory) did not show change with age, but free recall (reflecting explicit memory) was markedly reduced. We also compared the performance of adults with Williams syndrome to adults with Down…

  14. Examining factors involved in stress-related working memory impairments: Independent or conditional effects?

    PubMed

    Banks, Jonathan B; Tartar, Jaime L; Tamayo, Brittney A

    2015-12-01

    A large and growing body of research demonstrates the impact of psychological stress on working memory. However, the typical study approach tests the effects of a single biological or psychological factor on changes in working memory. The current study attempted to move beyond the standard single-factor assessment by examining the impact of 2 possible factors in stress-related working memory impairments. To this end, 60 participants completed a working memory task before and after either a psychological stressor writing task or a control writing task and completed measures of both cortisol and mind wandering. We also included a measure of state anxiety to examine the direct and indirect effect on working memory. We found that mind wandering mediated the relationship between state anxiety and working memory at the baseline measurement. This indirect relationship was moderated by cortisol, such that the impact of mind wandering on working memory increased as cortisol levels increased. No overall working memory impairment was observed following the stress manipulation, but increases in state anxiety and mind wandering were observed. State anxiety and mind wandering independently mediated the relationship between change in working memory and threat perception. The indirect paths resulted in opposing effects on working memory. Combined, the findings from this study suggest that cortisol enhances the impact of mind wandering on working memory, that state anxiety may not always result in stress-related working memory impairments, and that high working memory performance can protect against mind wandering. PMID:26098727

  15. Respiratory sensory gating measured by respiratory-related evoked potentials in generalized anxiety disorder

    PubMed Central

    Chan, Pei-Ying S.; Cheng, Chia-Hsiung; Hsu, Shih-Chieh; Liu, Chia-Yih; Davenport, Paul W.; von Leupoldt, Andreas

    2015-01-01

    The perception of respiratory sensations plays an important role both in respiratory diseases and in anxiety disorders. However, little is known about the neural processes underlying respiratory sensory perception, especially in patient groups. Therefore, the present study examined whether patients with generalized anxiety disorder (GAD) would demonstrate altered respiratory sensory gating compared to a healthy control group. Respiratory-related evoked potentials (RREP) were measured in a paired inspiratory occlusion paradigm presenting two brief occlusion stimuli (S1 and S2) within one inspiration. The results showed a significantly greater S2/S1 ratio for the N1 component of the RREP in the GAD group compared to the control group. Our findings suggest altered respiratory sensory processing in patients with GAD, which might contribute to altered perception of respiratory sensations in these patients. PMID:26217278

  16. Neuroanatomical Correlates of Malingered Memory Impairment: Event-related fMRI of Deception on a Recognition Memory Task

    PubMed Central

    Browndyke, Jeffrey N.; Paskavitz, James; Sweet, Lawrence H.; Cohen, Ronald A.; Tucker, Karen A.; Welsh-Bohmer, Kathleen A.; Burke, James R.; Schmechel, Donald E.

    2010-01-01

    Primary objective Event-related, functional magnetic resonance imaging (fMRI) data were acquired in healthy participants during purposefully malingered and normal recognition memory performances to evaluate the neural substrates of feigned memory impairment. Methods and procedures Pairwise, between-condition contrasts of neural activity associated with discrete recognition memory responses were conducted to isolate dissociable neural activity between normal and malingered responding while simultaneously controlling for shared stimulus familiarity and novelty effects. Response timing characteristics were also examined for any association with observed between-condition activity differences. Outcomes and results Malingered recognition memory errors, regardless of type, were associated with inferior parietal and superior temporal activity relative to normal performance, while feigned recognition target misses produced additional dorsomedial frontal activation and feigned foil false alarms activated bilateral ventrolateral frontal regions. Malingered response times were associated with activity in the dorsomedial frontal, temporal, and inferior parietal regions. Normal memory responses were associated with greater inferior occipitotemporal and dorsomedial parietal activity, suggesting greater reliance upon visual/attentional networks for proper task performance. Conclusions The neural substrates subserving feigned recognition memory deficits are influenced by response demand and error type, producing differential activation of cortical regions important to complex visual processing, executive control, response planning, and working memory processes. PMID:18465389

  17. Relations between Vocabulary Development and Verbal Short-Term Memory: The Relative Importance of Short-Term Memory for Serial Order and Item Information

    ERIC Educational Resources Information Center

    Majerus, Steve; Poncelet, Martine; Greffe, Christelle; Van der Linden, Martial

    2006-01-01

    Although many studies have shown an association between verbal short-term memory (STM) and vocabulary development, the precise nature of this association is not yet clear. The current study reexamined this relation in 4- to 6-year-olds by designing verbal STM tasks that maximized memory for either item or serial order information. Although…

  18. Memory strategy training in children with cerebral infarcts related to sickle cell disease.

    PubMed

    Yerys, Benjamin E; White, Desirée A; Salorio, Cynthia F; McKinstry, Robert; Moinuddin, Asif; DeBaun, Michael

    2003-06-01

    Cerebral infarcts occur in approximately 30% of children with sickle cell disease (SCD), but little information exists regarding remediation of associated cognitive deficits. The authors examined the benefits of training children with infarcts to use memory strategies. Six children with SCD-related infarcts received academic tutoring; three of these children received additional training in memory strategies (silent rehearsal to facilitate short-term memory and semantic organization to facilitate long-term memory). The performance of children receiving strategy training appeared to improve more than that of children receiving only tutoring. Memory in children with SCD-related infarcts may be enhanced through strategy training. PMID:12794531

  19. The Relations between Early Working Memory Abilities and Later Developing Reading Skills: A Longitudinal Study from Kindergarten to Fifth Grade

    ERIC Educational Resources Information Center

    Nevo, Einat; Bar-Kochva, Irit

    2015-01-01

    This study investigated the relations of early working-memory abilities (phonological and visual-spatial short-term memory [STM] and complex memory and episodic buffer memory) and later developing reading skills. Sixty Hebrew-speaking children were followed from kindergarten through Grade 5. Working memory was tested in kindergarten and reading in…

  20. Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications

    NASA Astrophysics Data System (ADS)

    Yamauchi, Yoshimitsu; Kamakura, Yoshinari; Isagi, Yousuke; Matsuoka, Toshimasa; Malotaux, Satoshi

    2013-09-01

    A novel floating-gate oxide semiconductor (FLOTOS) memory using a wide-band-gap indium-gallium-zinc oxide (IGZO) is presented for low-power system-on-panel applications. An IGZO thin-film-transistor (TFT) is used as a memory transistor for controlling read current as well as a switching transistor for storing charges in a storage capacitor (Cs). The FLOTOS memory is fabricated using a standard IGZO TFT process without any additional process or mask steps. The proposed precharge-assisted threshold voltage compensation technique makes it possible to realize an infinite number of write cycles and a low-power write operation with a bit-line voltage of 5 V. Furthermore, excellent data retention longer than 10 h is obtained at 60 °C even under the worst bias-stress condition of read operation with the ultra low off-state leakage (2.8×10-20 A/µm) of the IGZO TFTs, which is estimated to be smaller by more than 7 orders of magnitude than that of polycrystalline silicon TFTs.

  1. Effect of the chemical composition at the memory behavior of Al/BST/SiO2/Si-gate-FET structure

    NASA Astrophysics Data System (ADS)

    Saif, Ala'eddin A.; Jamal, Z. A. Z.; Poopalan, P.

    2011-09-01

    The effect of the chemical composition of the ferroelectric barium strontium titanate (BST) on the memory window behavior of Al/BST/SiO2/Si-gate-field effect transistor structure has been investigated. Nanocrystalline Ba x Sr1- x TiO3 thin films with different x values have been fabricated as metal-ferroelectric-insulator-semiconductor (MFIS) and metal-ferroelectric-metal (MFM) configurations using a sol-gel technique. The variation of the dielectric constant (ɛ) and tan δ with frequency for MFM samples have been studied to ensure the dielectric quality of the material. At low frequencies, ɛ increases as the strontium content decreases, whereas at high frequencies, it shows the opposite variation, which is attributed to the dipole dynamics. The ferroelectricity of the BST within MFM structure has been investigated using C-V characteristics, which show that the ferroelectric hysteresis strength increases as the strontium content decreases. The ferroelectric memory behavior of the MFIS samples has been investigated using C-V characteristics. The results show that the memory window width increases as the strontium content decreases; this is attributed to the grain size and dipole dynamics effect.

  2. Investing the effectiveness of retention performance in a non-volatile floating gate memory device with a core-shell structure of CdSe nanoparticles

    NASA Astrophysics Data System (ADS)

    Lee, Dong-Hoon; Kim, Jung-Min; Lim, Ki-Tae; Cho, Hyeong Jun; Bang, Jin Ho; Kim, Yong-Sang

    2016-03-01

    In this paper, we empirically investigate the retention performance of organic non-volatile floating gate memory devices with CdSe nanoparticles (NPs) as charge trapping elements. Core-structured CdSe NPs or core-shell-structured ZnS/CdSe NPs were mixed in PMMA and their performance in pentacene based device was compared. The NPs and self-organized thin tunneling PMMA inside the devices exhibited hysteresis by trapping hole during capacitance-voltage characterization. Despite of core-structured NPs showing a larger memory window, the retention time was too short to be adopted by an industry. By contrast core-shell structured NPs showed an improved retention time of >10000 seconds than core-structure NCs. Based on these results and the energy band structure, we propose the retention mechanism of each NPs. This investigation of retention performance provides a comparative and systematic study of the charging/discharging behaviors of NPs based memory devices. [Figure not available: see fulltext.

  3. Hippocampal representation of related and opposing memories develop within distinct, hierarchically organized neural schemas.

    PubMed

    McKenzie, Sam; Frank, Andrea J; Kinsky, Nathaniel R; Porter, Blake; Rivière, Pamela D; Eichenbaum, Howard

    2014-07-01

    Recent evidence suggests that the hippocampus may integrate overlapping memories into relational representations, or schemas, that link indirectly related events and support flexible memory expression. Here we explored the nature of hippocampal neural population representations for multiple features of events and the locations and contexts in which they occurred. Hippocampal networks developed hierarchical organizations of associated elements of related but separately acquired memories within a context, and distinct organizations for memories where the contexts differentiated object-reward associations. These findings reveal neural mechanisms for the development and organization of relational representations. PMID:24910078

  4. Age-related differences in working memory updating components.

    PubMed

    Linares, Rocío; Bajo, M Teresa; Pelegrina, Santiago

    2016-07-01

    The aim of this study was to investigate possible age-related changes throughout childhood and adolescence in different component processes of working memory updating (WMU): retrieval, transformation, and substitution. A set of numerical WMU tasks was administered to four age groups (8-, 11-, 14-, and 21-year-olds). To isolate the effect of each of the WMU components, participants performed different versions of a task that included different combinations of the WMU components. The results showed an expected overall decrease in response times and an increase in accuracy performance with age. Most important, specific age-related changes in the retrieval component were found, demonstrating that the effect of retrieval on accuracy was larger in children than in adolescents or young adults. These findings indicate that the availability of representations from outside the focus of attention may change with age. Thus, the retrieval component of updating could contribute to the age-related changes observed in the performance of many updating tasks. PMID:26985577

  5. Are Memory Self-Efficacy and Memory Performance Related? A Meta-Analysis

    ERIC Educational Resources Information Center

    Beaudoin, Marine; Desrichard, Olivier

    2011-01-01

    The association between memory self-efficacy (MSE) and memory performance is highly documented in the literature. However, previous studies have produced inconsistent results, and there is no consensus on the existence of a significant link between these two variables. In order to evaluate whether or not the effect size of the MSE-memory…

  6. Working Memory, Animacy, and Verb Class in the Processing of Relative Clauses

    ERIC Educational Resources Information Center

    Traxler, M.J.; Williams, R.S.; Blozis, S.A.; Morris, R.K.

    2005-01-01

    In three eye-movement monitoring experiments, participants' working memory capacity was assessed and they read sentences containing subject-extracted and object-extracted relative clauses. In Experiment 1, sentences lacked helpful semantic cues, object-relatives were harder to process than subject relatives, and working memory capacity did not…

  7. College students' memory for vocabulary in their majors: evidence for a nonlinear relation between knowledge and memory.

    PubMed

    DeMarie, Darlene; Aloise-Young, Patricia A; Prideaux, Cheri L; Muransky-Doran, Jean; Gerda, Julie Hart

    2004-09-01

    The effect of domain knowledge on students' memory for vocabulary terms was investigated. Participants were 142 college students (94 education majors and 48 business majors). The measure of domain knowledge was the number of courses completed in the major. Students recalled three different lists (control, education, and business) of 20 words. Knowledge effects were estimated controlling for academic aptitude, academic achievement, and general memory ability. Domain-specific knowledge consistently predicted recall, above and beyond the effect of these control variables. Moreover, nonlinear models better represented the relation between knowledge and memory, with very similar functions predicting recall in both knowledge domains. Specifically, early in the majors more classes corresponded with increased memory performance, but a plateau period, when more classes did not result in higher recall, was evident for both majors. Longitudinal research is needed to explore at what point in learning novices' performance begins to resemble experts' performance. PMID:15487438

  8. Goal orientation and self-efficacy in relation to memory in adulthood

    PubMed Central

    Hastings, Erin C.; West, Robin L.

    2011-01-01

    The achievement goal framework (Dweck, 1986) has been well-established in children and college-students, but has rarely been examined empirically with older adults. The current study, including younger and older adults, examined the effects of memory self-efficacy, learning goals (focusing on skill mastery over time) and performance goals (focusing on performance outcome evaluations) on memory performance. Questionnaires measured memory self-efficacy and general orientation toward learning and performance goals; free and cued recall was assessed in a subsequent telephone interview. As expected, age was negatively related and education was positively related to memory self-efficacy, and memory self-efficacy was positively related to memory, in a structural equation model. Age was also negatively related to memory performance. Results supported the positive impact of learning goals and the negative impact of performance goals on memory self-efficacy. There was no significant direct effect of learning or performance goals on memory performance; their impact occurred via their effect on memory self-efficacy. The present study supports past research suggesting that learning goals are beneficial, and performance goals are maladaptive, for self-efficacy and learning, and validates the achievement goal framework in a sample including older adults. PMID:21728891

  9. Goal orientation and self-efficacy in relation to memory in adulthood.

    PubMed

    Hastings, Erin C; West, Robin L

    2011-07-01

    The achievement goal framework (Dweck, 1986, American Psychologist, 41, 1040) has been well-established in children and college-students, but has rarely been examined empirically with older adults. The current study, including younger and older adults, examined the effects of memory self-efficacy, learning goals (focusing on skill mastery over time) and performance goals (focusing on performance outcome evaluations) on memory performance. Questionnaires measured memory self-efficacy and general orientation toward learning and performance goals; free and cued recall was assessed in a subsequent telephone interview. As expected, age was negatively related and education was positively related to memory self-efficacy, and memory self-efficacy was positively related to memory, in a structural equation model. Age was also negatively related to memory performance. Results supported the positive impact of learning goals and the negative impact of performance goals on memory self-efficacy. There was no significant direct effect of learning or performance goals on memory performance; their impact occurred via their effect on memory self-efficacy. The present study supports past research suggesting that learning goals are beneficial, and performance goals are maladaptive, for self-efficacy and learning, and validates the achievement goal framework in a sample including older adults. PMID:21728891

  10. Meaning-Making in Memories: A Comparison of Memories of Death-Related and Low Point Life Experiences

    ERIC Educational Resources Information Center

    Mackay, Michael M.; Bluck, Susan

    2010-01-01

    Because of their extensive experience with death and dying, hospice volunteers may be more successful at engaging in meaning-making regarding their death-related experiences than their low point life experiences (e.g., job loss). Consequently, their memories of death-related experiences will manifest more meaning-making strategies (e.g.,…

  11. Surface photovoltage analysis of iron contamination in silicon processing and the relation to gate oxide integrity

    NASA Astrophysics Data System (ADS)

    Henley, Worth B.

    1995-09-01

    Surface photovoltage (SPV), a contactless optical technique for measuring minority carrier lifetime, is used to quantify the relationship between silicon iron contamination level and thin gate oxide integrity. Iron concentration levels in the range of 1 X 1010 cm-3 to 5 X 1013 cm-3 are evaluated for oxide thicknesses of 8 to 20 nm. Ramp voltage electrical breakdown and time dependant dielectric breakdown measurement on the iron contaminated gate oxide capacitors are reported. Distinct iron contamination threshold limits based on defect density and gate oxide integrity evaluate cleaning efficiencies and metallic cross contamination effects during thermal processing contamination. Iron-silicide precipitation kinetics are investigated by the lifetime analysis procedure.

  12. Control gate length, spacing, channel hole diameter, and stacked layer number design for bit-cost scalable-type three-dimensional stackable NAND flash memory

    NASA Astrophysics Data System (ADS)

    Miyaji, Kousuke; Yanagihara, Yuki; Hirasawa, Reo; Ning, Sheyang; Takeuchi, Ken

    2014-02-01

    A cell design for three-dimensional (3D) stackable NAND (3D NAND) flash memory are investigated with emphases on control gate length (Lg), spacing (Lspace) and channel hole diameter (Φ). The requirements for the Lg and Lspace are derived from the 3D device simulation and the effective cell size that competes with the planar NAND. The simulations reveal that Lg = Lspace = 20 nm (40 nm layer pitch) is achievable for bit-cost scalable (BiCS)-type 3D NAND with the 90 nm diameter hole. If the number of stacked layers is 22 with the layer pitch of 40 nm, the effective cell size of the 3D NAND corresponds to that of 15 nm planar NAND technology. Furthermore, cell characteristics of the macaroni body channel with various Φ are investigated. Although macaroni body channel improves cell characteristics at Φ = 90 nm, a cell with Φ = 60 nm without macaroni body structure shows better characteristics.

  13. Residual Clamping Force and Dynamic Random Access Memory Data Retention Improved by Gate Tungsten Etch Dechucking Condition in a Bipolar Electrostatic Chuck

    NASA Astrophysics Data System (ADS)

    Lee, Chung-Yuan; Lai, Chao-Sung; Yang, Chia-Ming; Wang, David HL; Lin, Betty; Lee, Siimon; Huang, Chi-Hung; Wei, Chen Chang

    2012-08-01

    It was found that the residual clamping force of bipolar electrostatic chucks created by the residual charge between a wafer and an electrode would not only cause a wafer sticking problem but also degrade dynamic random access memory (DRAM) data retention performance. The residual clamping force and data retention fail bit count (FBC) of DRAM showed strong correlations to the gate tungsten etch dechucking process condition. Wafer sticking only degraded DRAM cell retention performance, and did not influence any in-line measurement or electrical parameters. Electrical characterization analysis of the FBC proved that the retention loss was mainly due to junction leakage rather than gate-induced-drain-leakage current. A new approach was proposed to suppress this leakage by introducing N2 gas instead of O2 to supply more plasma charges for neutralizing the wafer surface residual charges. The wafer shift dynamic alignment (DA) offset and retention FBC could be reduced by 50 and 40%, respectively. Poor data retention was suspected because of the compressive stress caused by wafer sticking DA shift resulting in a high electric field at the junction and an increase in junction leakage at the storage node.

  14. Relative recency influences object-in-context memory

    PubMed Central

    Tam, Shu K.E.; Bonardi, Charlotte; Robinson, Jasper

    2015-01-01

    In two experiments rats received training on an object-in-context (OIC) task, in which they received preexposure to object A in context x, followed by exposure to object B in context y. In a subsequent test both A and B are presented in either context x or context y. Usually more exploration is seen of the object that has not previously been paired with the test context, an effect attributed to the ability to remember where an object was encountered. However, in the typical version of this task, object A has also been encountered less recently than object B at test. This is precisely the arrangement in tests of ‘relatively recency’ (RR), in which more remotely presented objects are explored more than objects experienced more recently. RR could contaminate performance on the OIC task, by enhancing the OIC effect when animals are tested in context y, and masking it when the test is in context x. This possibility was examined in two experiments, and evidence for superior performance in context y was obtained. The implications of this for theoretical interpretations of recognition memory and the procedures used to explore it are discussed. PMID:25546721

  15. Relative recency influences object-in-context memory.

    PubMed

    Tam, Shu K E; Bonardi, Charlotte; Robinson, Jasper

    2015-03-15

    In two experiments rats received training on an object-in-context (OIC) task, in which they received preexposure to object A in context x, followed by exposure to object B in context y. In a subsequent test both A and B are presented in either context x or context y. Usually more exploration is seen of the object that has not previously been paired with the test context, an effect attributed to the ability to remember where an object was encountered. However, in the typical version of this task, object A has also been encountered less recently than object B at test. This is precisely the arrangement in tests of 'relatively recency' (RR), in which more remotely presented objects are explored more than objects experienced more recently. RR could contaminate performance on the OIC task, by enhancing the OIC effect when animals are tested in context y, and masking it when the test is in context x. This possibility was examined in two experiments, and evidence for superior performance in context y was obtained. The implications of this for theoretical interpretations of recognition memory and the procedures used to explore it are discussed. PMID:25546721

  16. Relation of Three Mechanisms of Working Memory to Children's Complex Span Performance

    ERIC Educational Resources Information Center

    Magimairaj, Beula; Montgomery, James; Marinellie, Sally; McCarthy, John

    2009-01-01

    There is a paucity of research examining the relative contribution of the different mechanisms of working memory (short-term storage [STM], processing speed) to children's complex memory span. This study served to replicate and extend the few extant studies that have examined the issue. In this study, the relative contribution of three mechanisms…

  17. Mechanisms of Age-Related Decline in Memory Search across the Adult Life Span

    ERIC Educational Resources Information Center

    Hills, Thomas T.; Mata, Rui; Wilke, Andreas; Samanez-Larkin, Gregory R.

    2013-01-01

    Three alternative mechanisms for age-related decline in memory search have been proposed, which result from either reduced processing speed (global slowing hypothesis), overpersistence on categories (cluster-switching hypothesis), or the inability to maintain focus on local cues related to a decline in working memory (cue-maintenance hypothesis).…

  18. Dietary lipids are differentially associated with hippocampal-dependent relational memory in prepubescent children1234

    PubMed Central

    Khan, Naiman A; Monti, Jim M; Raine, Lauren B; Drollette, Eric S; Moore, R Davis; Scudder, Mark R; Kramer, Arthur F; Hillman, Charles H; Cohen, Neal J

    2014-01-01

    Background: Studies in rodents and older humans have shown that the hippocampus—a brain structure critical to relational/associative memory—has remarkable plasticity as a result of lifestyle factors (eg, exercise). However, the effect of dietary intake on hippocampal-dependent memory during childhood has remained unexamined. Objective: We investigated the cross-sectional relation of dietary components characteristic of the Western diet, including saturated fatty acids (SFAs), omega-3 (n−3) fatty acids, and refined sugar, with hippocampal-dependent relational memory in prepubescent children. Design: Participants aged 7–9 y (n = 52) reported their dietary intake by using the Youth-Adolescent Food-Frequency Questionnaire and completed memory tasks designed to assess relational (hippocampal-dependent) and item (hippocampal-independent) memory. Performance on the memory tasks was assessed with both direct (accuracy) and indirect (eye movement) measures. Results: Partial correlations adjusted for body mass index showed a positive relation between relational memory accuracy and intake of omega-3 fatty acids and a negative relation of both relational and item memory accuracy with intake of SFAs. Potential confounding factors of age, sex, intelligence quotient, socioeconomic status, pubertal timing, and aerobic fitness (maximal oxygen volume) were not significantly related to any of the dietary intake measures. Eye movement measures of relational memory (preferential viewing to the target stimulus) showed a negative relation with intake of added sugar. Conclusions: SFA intake was negatively associated with both forms of memory, whereas omega-3 fatty acid intake was selectively positively associated with hippocampal-dependent relational memory. These findings are among the first to show a link between habitual dietary intake and cognitive health as pertaining to hippocampal function in childhood. The Fitness Improves Thinking Kids (FITKids) and FITKids2 trials were

  19. Modifying Memory for a Museum Tour in Older Adults: Reactivation-Related Updating that Enhances and Distorts Memory is Reduced in Aging

    PubMed Central

    St Jacques, Peggy L.; Montgomery, Daniel; Schacter, Daniel L.

    2015-01-01

    Memory reactivation, the activation of a latent memory trace when we are reminded of a past experience, strengthens memory but can also contribute to distortions if new information present during reactivation is integrated with existing memory. In a previous study in young adults we found that the quality of memory reactivation, manipulated using the principle of encoding specificity and indexed by recollection ratings, modulated subsequent true and false memories for events experienced during a museum tour. Here, we examined age-related changes in the quality of memory reactivation on subsequent memory. Young and older adults reactivated memories for museum stops immediately followed by the presentation of a novel lure photo from an alternate tour version (i.e., reactivation plus new information). There was an increase in subsequent true memories for reactivated targets and for subsequent false memories for lures that followed reactivated targets, when compared to baseline target and lure photos. However, the influence of reactivation on subsequent memories was reduced in older adults. These data reveal that aging alters reactivation-related updating processes that allow memories to be strengthened and updated with new information-consequently reducing memory distortions in older compared to young adults. PMID:24993055

  20. An age-related deficit in spatial-feature reference memory in homing pigeons (Columba livia).

    PubMed

    Coppola, Vincent J; Flaim, Mary E; Carney, Samantha N; Bingman, Verner P

    2015-03-01

    Age-related memory decline in mammals has been well documented. By contrast, very little is known about memory decline in birds as they age. In the current study we trained younger and older homing pigeons on a reference memory task in which a goal location could be encoded by spatial and feature cues. Consistent with a previous working memory study, the results revealed impaired acquisition of combined spatial-feature reference memory in older compared to younger pigeons. Following memory acquisition, we used cue-conflict probe trials to provide an initial assessment of possible age-related differences in cue preference. Both younger and older pigeons displayed a similarly modest preference for feature over spatial cues. PMID:25449841

  1. Systems and methods for detecting a failure event in a field programmable gate array

    NASA Technical Reports Server (NTRS)

    Ng, Tak-Kwong (Inventor); Herath, Jeffrey A. (Inventor)

    2009-01-01

    An embodiment generally relates to a method of self-detecting an error in a field programmable gate array (FPGA). The method includes writing a signature value into a signature memory in the FPGA and determining a conclusion of a configuration refresh operation in the FPGA. The method also includes reading an outcome value from the signature memory.

  2. Central Adiposity is Negatively Associated with Hippocampal-Dependent Relational Memory among Overweight and Obese Children

    PubMed Central

    Khan, Naiman A.; Baym, Carol L.; Monti, Jim M.; Raine, Lauren B.; Drollette, Eric S.; Scudder, Mark R.; Moore, R. Davis; Kramer, Arthur F.; Hillman, Charles H.; Cohen, Neal J.

    2014-01-01

    Objective To assess associations between adiposity and hippocampal-dependent and hippocampal-independent memory forms among prepubertal children. Study design Prepubertal children (7–9-year-olds, n = 126), classified as non-overweight (<85th %tile BMI-for-age [n = 73]) or overweight/obese (≥85th %tile BMI-for-age [n = 53]), completed relational (hippocampal-dependent) and item (hippocampal-independent) memory tasks, and performance was assessed with both direct (behavioral accuracy) and indirect (preferential disproportionate viewing [PDV]) measures. Adiposity (%whole body fat mass, subcutaneous abdominal adipose tissue, visceral adipose tissue, and total abdominal adipose tissue) was assessed using DXA. Backward regressions identified significant (P <0.05) predictive models of memory performance. Covariates included age, sex, pubertal timing, socioeconomic status, IQ, oxygen consumption (VO2max), and body mass index (BMI) z-score. Results Among overweight/obese children, total abdominal adipose tissue was a significant negative predictor of relational memory behavioral accuracy, and pubertal timing together with socioeconomic status jointly predicted the PDV measure of relational memory. In contrast, among non-overweight children, male sex predicted item memory behavioral accuracy, and a model consisting of socioeconomic status and BMI z-score jointly predicted the PDV measure of relational memory. Conclusions Regional, and not whole body, fat deposition was selectively and negatively associated with hippocampal-dependent relational memory among overweight/obese prepubertal children. PMID:25454939

  3. Working memory maintenance contributes to long-term memory formation: evidence from slow event-related brain potentials.

    PubMed

    Khader, Patrick; Ranganath, Charan; Seemüller, Anna; Rösler, Frank

    2007-09-01

    Behavioral research has led to conflicting views regarding the relationship between working memory (WM) maintenance and long-term memory (LTM) formation. We used slow event-related brain potentials to investigate the degree to which neural activity during WM maintenance is associated with successful LTM formation. Participants performed a WM task with objects and letter strings, followed by a surprise LTM test. Slow potentials were found to be more negative over the parietal and occipital cortex for objects and over the left frontal cortex for letter strings during WM maintenance. Within each category, they were enhanced for items that were subsequently successfully remembered. These effects were topographically distinct, with maximum effects at those electrodes that showed the maximum negativity during WM maintenance in general. Together, these results are strongly consistent with the ideas that WM maintenance contributes to LTM formation and that this may occur through strengthening of stimulus-specific cortical memory traces. PMID:17993207

  4. Exploratory study of the relations between spatial ability and drawing from memory.

    PubMed

    Czarnolewski, Mark Y; Eliot, John

    2012-04-01

    Test scores of 119 students, attending either a public four-year college or a technical school, were related to their proportionality and detail drawing scores on the Memory for Designs Test. In regression models, the ETS Maze Tracing, Eliot-Price Mental Rotations, and Bender-Gestalt tests were consistent predictors of proportionality scores, with the latter two tests uniquely related to these. The ETS Shapes Memory Test and the Form Board Test were the strongest predictors for detail accuracy scores. The Shapes test predicted proportionality when the CTY Visual Memory Test BB was excluded. The models then provided support for the hypothesis that drawing designs from memory, a critical skill in drawing, regardless of whether one focuses on accuracy for proportionality scores or for detail scores, is jointly related to the measures of recognition, production, and traditional spatial ability measures. This study identified multifaceted skills in drawing from memory. PMID:22755465

  5. Relations between episodic memory, suggestibility, theory of mind, and cognitive inhibition in the preschool child.

    PubMed

    Melinder, Annika; Endestad, Tor; Magnussen, Svein

    2006-12-01

    The development of episodic memory, its relation to theory of mind (ToM), executive functions (e.g., cognitive inhibition), and to suggestibility was studied. Children (n= 115) between 3 and 6 years of age saw two versions of a video film and were tested for their memory of critical elements of the videos. Results indicated similar developmental trends for all memory measures, ToM, and inhibition, but ToM and inhibition were not associated with any memory measures. Correlations involving source memory was found in relation to specific questions, whereas inhibition and ToM were significantly correlated to resistance to suggestions. A regression analysis showed that age was the main contributor to resistance to suggestions, to correct source monitoring, and to correct responses to specific questions. Inhibition was also a significant main predictor of resistance to suggestive questions, whereas the relative contribution of ToM was wiped out when an extended model was tested. PMID:17107497

  6. Working Memory Effects of Gap-Predictions in Normal Adults: An Event-Related Potentials Study

    ERIC Educational Resources Information Center

    Hestvik, Arild; Bradley, Evan; Bradley, Catherine

    2012-01-01

    The current study examined the relationship between verbal memory span and the latency with which a filler-gap dependency is constructed. A previous behavioral study found that low span listeners did not exhibit antecedent reactivation at gap sites in relative clauses, in comparison to high verbal memory span subjects (Roberts et al. in "J…

  7. Gender Differences in Memory Processing: Evidence from Event-Related Potentials to Faces

    ERIC Educational Resources Information Center

    Guillem, F.; Mograss, M.

    2005-01-01

    This study investigated gender differences on memory processing using event-related potentials (ERPs). Behavioral data and ERPs were recorded in 16 males and 10 females during a recognition memory task for faces. The behavioral data results showed that females performed better than males. Gender differences on ERPs were evidenced over anterior…

  8. Who, When, and Where? Age-Related Differences on a New Memory Test

    ERIC Educational Resources Information Center

    Sumida, Catherine A.; Holden, Heather M.; Van Etten, Emily J.; Wagner, Gabrielle M.; Hileman, Jacob D.; Gilbert, Paul E.

    2016-01-01

    Our study examined age-related differences on a new memory test assessing memory for "who," "when," and "where," and associations among these elements. Participants were required to remember a sequence of pictures of different faces paired with different places. Older adults remembered significantly fewer correct…

  9. Working Memory Effects in the L2 Processing of Ambiguous Relative Clauses

    ERIC Educational Resources Information Center

    Hopp, Holger

    2014-01-01

    This article investigates whether and how L2 sentence processing is affected by memory constraints that force serial parsing. Monitoring eye movements, we test effects of working memory on L2 relative-clause attachment preferences in a sample of 75 late-adult German learners of English and 25 native English controls. Mixed linear regression…

  10. Developmental Changes in Memory-Related Linguistic Skills and Their Relationship to Episodic Recall in Children

    PubMed Central

    Uehara, Izumi

    2015-01-01

    This longitudinal study of nine children examined two issues concerning infantile amnesia: the time at which memories for events experienced before the age of 3–4 years disappear from consciousness and whether this timing of memory loss is related to the development of specific aspects of episodic and autobiographical memory. This study followed children from infancy to early childhood and examined the central role of three verbal–cognitive milestones related to autobiographical memory: the age at which children begin to report autobiographical memories using the past tense (Milestone 1); the age at which they begin to verbally acknowledge past events (Milestone 2); and the age at which they begin to spontaneously use memory-related verbs (Milestone 3). As expected, memories of events that occurred before 3–4 years of age were affected by infantile amnesia. Achievement of these milestones followed almost the same developmental progression: Milestone 1 (1 year; 10 months (1;10) to 3 years; 4 months (3;4)) was followed by Milestones 2 (3;1 to 4;0) and 3 (3;5 to 4;4). Milestone 2 was typically related to the onset of infantile amnesia, whereas Milestone 1 occurred during the period for which the children became amnesic as they aged. These data suggest that linguistic meta-cognitive awareness of personal memory is the key feature in infantile amnesia. PMID:26331479

  11. The Relation between Mathematics and Working Memory in Young Children with Fetal Alcohol Spectrum Disorders

    ERIC Educational Resources Information Center

    Rasmussen, Carmen; Bisanz, Jeffrey

    2011-01-01

    The goal of this study was to examine the relation between mathematics and working memory in young children with Fetal Alcohol Spectrum Disorders (FASD). Children with FASD and comparison children (4 to 6 years old) completed standardized tests of mathematics and working memory. Children with FASD showed impairments on mathematics (applied…

  12. Developmental Changes in Memory Encoding: Insights from Event-Related Potentials

    ERIC Educational Resources Information Center

    Rollins, Leslie; Riggins, Tracy

    2013-01-01

    The aim of the present study was to investigate developmental changes in encoding processes between 6-year-old children and adults using event-related potentials (ERPs). Although episodic memory ("EM") effects have been reported in both children and adults at retrieval and subsequent memory effects have been established in adults, no…

  13. Time-Related Decay or Interference-Based Forgetting in Working Memory?

    ERIC Educational Resources Information Center

    Portrat, Sophie; Barrouillet, Pierre; Camos, Valerie

    2008-01-01

    The time-based resource-sharing model of working memory assumes that memory traces suffer from a time-related decay when attention is occupied by concurrent activities. Using complex continuous span tasks in which temporal parameters are carefully controlled, P. Barrouillet, S. Bernardin, S. Portrat, E. Vergauwe, & V. Camos (2007) recently…

  14. Relation between Intelligence and Short-Term Memory

    ERIC Educational Resources Information Center

    Cohen, Ronald L.; Sandberg, Tor

    1977-01-01

    Intelligence and short-term memory correlations in children were measured using probed serial recall of supraspan digit lists. Results showed the predictive power of intelligence to range from a maximum in the case of recall for recency items to practically zero in the case of primacy items. (Author/MV)

  15. Working Memory Compensates for Hearing Related Phonological Processing Deficit

    ERIC Educational Resources Information Center

    Classon, Elisabet; Rudner, Mary; Ronnberg, Jerker

    2013-01-01

    Acquired hearing impairment is associated with gradually declining phonological representations. According to the Ease of Language Understanding (ELU) model, poorly defined representations lead to mismatch in phonologically challenging tasks. To resolve the mismatch, reliance on working memory capacity (WMC) increases. This study investigated…

  16. Age-related decline of precision and binding in visual working memory.

    PubMed

    Peich, Muy-Cheng; Husain, Masud; Bays, Paul M

    2013-09-01

    Working memory declines with normal aging, but the nature of this impairment is debated. Studies based on detecting changes to arrays of visual objects have identified two possible components to age-related decline: a reduction in the number of items that can be stored, or a deficit in maintaining the associations (bindings) between individual object features. However, some investigations have reported intact binding with aging, and specific deficits arising only in Alzheimer's disease. Here, using a recently developed continuous measure of recall fidelity, we tested the precision with which adults of different ages could reproduce from memory the orientation and color of a probed array item. The results reveal a further component of cognitive decline: an age-related decrease in the resolution with which visual information can be maintained in working memory. This increase in recall variability with age was strongest under conditions of greater memory load. Moreover, analysis of the distribution of errors revealed that older participants were more likely to incorrectly report one of the unprobed items in memory, consistent with an age-related increase in misbinding. These results indicate a systematic decline with age in working memory resources that can be recruited to store visual information. The paradigm presented here provides a sensitive index of both memory resolution and feature binding, with the potential for assessing their modulation by interventions. The findings have implications for understanding the mechanisms underpinning working memory deficits in both health and disease. PMID:23978008

  17. Age-related Changes in the Sleep-dependent Reorganization of Declarative Memories.

    PubMed

    Baran, Bengi; Mantua, Janna; Spencer, Rebecca M C

    2016-06-01

    Consolidation of declarative memories has been associated with slow wave sleep in young adults. Previous work suggests that, in spite of changes in sleep, sleep-dependent consolidation of declarative memories may be preserved with aging, although reduced relative to young adults. Previous work on young adults shows that, with consolidation, retrieval of declarative memories gradually becomes independent of the hippocampus. To investigate whether memories are similarly reorganized over sleep at the neural level, we compared functional brain activation associated with word pair recall following a nap and equivalent wake in young and older adults. SWS during the nap predicted better subsequent memory recall and was negatively associated with retrieval-related hippocampal activation in young adults. In contrast, in older adults there was no relationship between sleep and memory performance or with retrieval-related hippocampal activation. Furthermore, compared with young adults, postnap memory retrieval in older adults required strong functional connectivity of the hippocampus with the PFC, whereas there were no differences between young and older adults in the functional connectivity of the hippocampus following wakefulness. These results suggest that, although neural reorganization takes place over sleep in older adults, the shift is unique from that seen in young adults, perhaps reflecting memories at an earlier stage of stabilization. PMID:26918588

  18. Band bending effect induced by gate voltage on the charge loss behavior of charge trap flash memory devices

    NASA Astrophysics Data System (ADS)

    Chang, M.; Hwang, H.; Jeon, S.

    2010-02-01

    We found that the polarity of the gate voltage (Vg) during the retention characteristics for a SiO2/Si3N4/Al2O3 (ONA) stack can affect the charge loss direction, due to band bending. Positive Vg could induce electron de-trapping through Al2O3, while a negative Vg could induce the same through SiO2. Consequently, the charge loss rates exhibited a hairpin curve with Vg. We clearly observed that increases of the SiO2 thickness of the ONA stack induced negative shifts of hairpin curve. This result suggests that the dominant charge loss path could be changed from SiO2 to Al2O3 by increasing the SiO2 thickness without Vg.

  19. The relation between navigation strategy and associative memory: An individual differences approach.

    PubMed

    Ngo, Chi T; Weisberg, Steven M; Newcombe, Nora S; Olson, Ingrid R

    2016-04-01

    Although the hippocampus is implicated in both spatial navigation and associative memory, very little is known about whether individual differences in the 2 domains covary. People who prefer to navigate using a hippocampal-dependent place strategy may show better performance on associative memory tasks than those who prefer a caudate-dependent response strategy (Bohbot, Gupta, Banner, & Dahmani, 2011), but not all studies suggest such an effect (Woollett & Maguire, 2009, 2012). Here we tested nonexpert young adults and found that preference for a place strategy positively correlated with spatial (object-location) associative memory performance but did not correlate with nonspatial (face-name) associative memory performance. Importantly, these correlations differed from each other, indicating that the relation between navigation strategy and associative memory is specific to the spatial domain. In addition, the 2 associative memory tasks significantly correlated, suggesting that object-location memory taps into processes relevant to both hippocampal-dependent navigation and nonspatial associative memory. Our findings also suggest that individual differences in spatial associative memory may account for some of the variance in navigation strategies. (PsycINFO Database Record PMID:26501930

  20. Familiarity is related to conceptual implicit memory: an examination of individual differences.

    PubMed

    Wang, Wei-chun; Yonelinas, Andrew P

    2012-12-01

    Explicit memory is thought to be distinct from implicit memory. However, growing evidence has indicated that explicit familiarity-based recognition memory judgments rely on the same process that supports conceptual implicit memory. We tested this hypothesis by examining individual differences using a paradigm wherein we measured both familiarity and conceptual implicit memory within the same participants. In Experiments 1a and 1b, we examined recognition memory confidence ROCs and remember/know responses, respectively, to estimate recollection and familiarity, and used a free association task to measure conceptual implicit memory. The results demonstrated that, across participants, familiarity, but not recollection, was significantly correlated with conceptual priming. In contrast, in Experiment 2, utilizing a similar paradigm, a comparison of recognition memory ROCs and explicit associative cued-recall performance indicated that cued recall was related to both recollection and familiarity. These results are consistent with models assuming that familiarity-based recognition and conceptual implicit memory rely on similar underlying processes. PMID:22833341

  1. Low working memory capacity is only spuriously related to poor reading comprehension.

    PubMed

    Van Dyke, Julie A; Johns, Clinton L; Kukona, Anuenue

    2014-06-01

    Accounts of comprehension failure, whether in the case of readers with poor skill or when syntactic complexity is high, have overwhelmingly implicated working memory capacity as the key causal factor. However, extant research suggests that this position is not well supported by evidence on the span of active memory during online sentence processing, nor is it well motivated by models that make explicit claims about the memory mechanisms that support language processing. The current study suggests that sensitivity to interference from similar items in memory may provide a better explanation of comprehension failure. Through administration of a comprehensive skill battery, we found that the previously observed association of working memory with comprehension is likely due to the collinearity of working memory with many other reading-related skills, especially IQ. In analyses which removed variance shared with IQ, we found that receptive vocabulary knowledge was the only significant predictor of comprehension performance in our task out of a battery of 24 skill measures. In addition, receptive vocabulary and non-verbal memory for serial order-but not simple verbal memory or working memory-were the only predictors of reading times in the region where interference had its primary affect. We interpret these results in light of a model that emphasizes retrieval interference and the quality of lexical representations as key determinants of successful comprehension. PMID:24657820

  2. Computer memory access technique

    NASA Technical Reports Server (NTRS)

    Zottarelli, L. J.

    1967-01-01

    Computer memory access commutator and steering gate configuration produces bipolar current pulses while still employing only the diodes and magnetic cores of the classic commutator, thereby appreciably reducing the complexity of the memory assembly.

  3. Insightful Imagery is Related to Working Memory Updating

    PubMed Central

    Nęcka, Edward; Żak, Piotr; Gruszka, Aleksandra

    2016-01-01

    Available body of evidence concerning the relationship between insight problem solving and working memory (WM) is ambiguous. Several authors propose that restructuring of the problem representation requires controlled search processes, which needs planning and involvement of WM. Other researchers suggest that the restructuring is achieved through the automatic spread of activation in long-term memory, assigning a limited role to WM capacity. In the present study we examined the correlations between insight problem solving performance and measures of WM updating function (n-back task), including general intelligence (as measured by Raven’s Advanced Progressive Matrices). The results revealed that updating function shared up to 30% of variance with the insight problem task performance, even when the influence of general mental ability was controlled for. These results suggest that insight problem solving is constrained by individual ability to update the content of WM. PMID:26973549

  4. Insightful Imagery is Related to Working Memory Updating.

    PubMed

    Nęcka, Edward; Żak, Piotr; Gruszka, Aleksandra

    2016-01-01

    Available body of evidence concerning the relationship between insight problem solving and working memory (WM) is ambiguous. Several authors propose that restructuring of the problem representation requires controlled search processes, which needs planning and involvement of WM. Other researchers suggest that the restructuring is achieved through the automatic spread of activation in long-term memory, assigning a limited role to WM capacity. In the present study we examined the correlations between insight problem solving performance and measures of WM updating function (n-back task), including general intelligence (as measured by Raven's Advanced Progressive Matrices). The results revealed that updating function shared up to 30% of variance with the insight problem task performance, even when the influence of general mental ability was controlled for. These results suggest that insight problem solving is constrained by individual ability to update the content of WM. PMID:26973549

  5. Motivated encoding selectively promotes memory for future inconsequential semantically-related events.

    PubMed

    Oyarzún, Javiera P; Packard, Pau A; de Diego-Balaguer, Ruth; Fuentemilla, Lluis

    2016-09-01

    Neurobiological models of long-term memory explain how memory for inconsequential events fades, unless these happen before or after other relevant (i.e., rewarding or aversive) or novel events. Recently, it has been shown in humans that retrospective and prospective memories are selectively enhanced if semantically related events are paired with aversive stimuli. However, it remains unclear whether motivating stimuli, as opposed to aversive, have the same effect in humans. Here, participants performed a three phase incidental encoding task where one semantic category was rewarded during the second phase. A memory test 24h after, but not immediately after encoding, revealed that memory for inconsequential items was selectively enhanced only if items from the same category had been previously, but not subsequently, paired with rewards. This result suggests that prospective memory enhancement of reward-related information requires, like previously reported for aversive memories, of a period of memory consolidation. The current findings provide the first empirical evidence in humans that the effects of motivated encoding are selectively and prospectively prolonged over time. PMID:27224885

  6. Retrograde amnesia: a study of its relation to anterograde amnesia and semantic memory deficits.

    PubMed

    Schmidtke, K; Vollmer, H

    1997-04-01

    This group study of 24 amnesic patients and 40 control subjects examined the hypothesis that retrograde memory deficits result from a combination of two impairment mechanisms: (1) a deficit in the retrieval of contents that is related to dysfunctioning of the hippocampal anterograde memory system, and (2) a deficit in the storage and/or retrieval of contents that is related to concomitant neocortical lesions. Retrograde amnesia was evaluated with the use of new Famous Persons and Autobiographical Memory Tests. The postulated components of retrograde memory impairment were assessed using the Wechsler Memory Scale and a new Semantic Memory Test, respectively. Regression analyses showed that recent episodic autobiography was exclusively related to the hippocampal component, while memory for famous persons and childhood autobiography was related to the neocortical component. In the case of details concerning people of recent fame, both components were identified as independent determinants. The temporal gradient of patients' impairment at the Famous Persons Test was marked for detailed knowledge, but small for overlearned knowledge. The present results thus support the combination hypothesis. They conform to the view that the transition from a hippocampus-dependent to a neocortex-dependent mnemonic representation of new contents is mediated by reiteration, and occurs within 5-10 years. PMID:9106279

  7. Memories.

    ERIC Educational Resources Information Center

    Brand, Judith, Ed.

    1998-01-01

    This theme issue of the journal "Exploring" covers the topic of "memories" and describes an exhibition at San Francisco's Exploratorium that ran from May 22, 1998 through January 1999 and that contained over 40 hands-on exhibits, demonstrations, artworks, images, sounds, smells, and tastes that demonstrated and depicted the biological,…

  8. Effects of memory strategy training on performance and event-related brain potentials of children with ADHD in an episodic memory task.

    PubMed

    Jonkman, Lisa M; Hurks, Petra P; Schleepen, Tamara M J

    2016-10-01

    Evidence for memory problems in children with attention deficit hyperactivity disorder (ADHD) is accumulating. Attempting to counter such problems, in the present study children with ADHD aged 8-12 years underwent a six-week metacognitive memory strategy training (MST) or one of two other active trainings, either a metacognitive attention-perceptual-motor training (APM) or placebo training consisting of playing board games (PLA). Effects of the training on episodic memory and underlying brain processes were investigated by comparing performance and event-related brain potentials (ERPs) on pre- and post-training sessions in an old/new recognition task between the three training groups. Potential far transfer effects of the memory strategy training were investigated by measuring performance on neuropsychological attention and memory-span tasks and parent-rated ADHD symptoms. The metacognitive memory strategy training led to significantly improved memory performance and enhanced amplitude of left parietal P600 activity associated with the process of memory recollection when compared to PLA, but APM training evoked similar improvements. Memory performance gains were significantly correlated with the memory-related ERP effects. Preliminary far transfer effects of MST training were found on attention and working memory performance and on parent-rated ADHD symptoms, although these results need replication with larger and better IQ-matched groups. PMID:26251965

  9. Increased attention and memory for beloved-related information during infatuation: behavioral and electrophysiological data

    PubMed Central

    Olivier, Jamie R.; Köhlen, Martine E.; Nijs, Ilse M.; Van Strien, Jan W.

    2015-01-01

    Emotionally salient information is well attended and remembered. It has been shown that infatuated individuals have increased attention for their beloved. It is unknown whether this attention bias generalizes to information related to the beloved. Moreover, infatuated individuals report to remember trivial things about their beloved, but this has not yet been tested empirically. In two studies, we tested whether infatuated individuals have increased attention and memory for beloved-related information. In a passive viewing task (Study 1), the late positive potential, an event-related potential (ERP) component reflecting motivated attention, was enhanced for beloved-related vs friend-related words/phrases. In a recognition task (Study 2), memory performance and the frontal and parietal ERP old/new effects, reflecting familiarity and recollection, respectively, were not enhanced for beloved-related compared with friend-related words/phrases. In free recall tasks in both studies, memory was better for beloved-related than friend-related words/phrases. This research reveals that attention and memory are enhanced for beloved-related information. These attention and memory biases for beloved-related information were not due to valence, semantic relatedness, or experience, but to arousal. To conclude, romantic love has profound effects on cognition that play a clear role in daily life. PMID:24526182

  10. Increased attention and memory for beloved-related information during infatuation: behavioral and electrophysiological data.

    PubMed

    Langeslag, Sandra J E; Olivier, Jamie R; Köhlen, Martine E; Nijs, Ilse M; Van Strien, Jan W

    2015-01-01

    Emotionally salient information is well attended and remembered. It has been shown that infatuated individuals have increased attention for their beloved. It is unknown whether this attention bias generalizes to information related to the beloved. Moreover, infatuated individuals report to remember trivial things about their beloved, but this has not yet been tested empirically. In two studies, we tested whether infatuated individuals have increased attention and memory for beloved-related information. In a passive viewing task (Study 1), the late positive potential, an event-related potential (ERP) component reflecting motivated attention, was enhanced for beloved-related vs friend-related words/phrases. In a recognition task (Study 2), memory performance and the frontal and parietal ERP old/new effects, reflecting familiarity and recollection, respectively, were not enhanced for beloved-related compared with friend-related words/phrases. In free recall tasks in both studies, memory was better for beloved-related than friend-related words/phrases. This research reveals that attention and memory are enhanced for beloved-related information. These attention and memory biases for beloved-related information were not due to valence, semantic relatedness, or experience, but to arousal. To conclude, romantic love has profound effects on cognition that play a clear role in daily life. PMID:24526182

  11. Executive function deficits in early Alzheimer's disease and their relations with episodic memory.

    PubMed

    Baudic, Sophie; Barba, Gianfranco Dalla; Thibaudet, Marie Claude; Smagghe, Alain; Remy, Philippe; Traykov, Latchezar

    2006-01-01

    Previous research suggests that patients with Alzheimer's disease (AD) are impaired on executive function early in the course of disease, but negative findings were reported. To evaluate the performance on executive tasks in early AD and to determine the involvement of memory on the outcome of executive tasks. Thirty-six AD patients were divided into two subgroups on the basis of the MMSE: very mild and mild. The comparison with 17 normal controls shows that very mild AD patients had deficits on visuospatial short-term memory, episodic memory, flexibility and self-monitoring abilities, concept formation and reasoning. The mild AD patients showed additional deficits on the Similarities test. Episodic memory and executive deficits occur in the very early stage of AD and precede impairment in constructional praxis, language and sustained attention. With the progression of the disease, additional deficit is observed in abstract thinking. In mild AD, memory failure is also related to executive impairment. PMID:16125364

  12. Individual differences in algebraic cognition: Relation to the approximate number and semantic memory systems.

    PubMed

    Geary, David C; Hoard, Mary K; Nugent, Lara; Rouder, Jeffrey N

    2015-12-01

    The relation between performance on measures of algebraic cognition and acuity of the approximate number system (ANS) and memory for addition facts was assessed for 171 ninth graders (92 girls) while controlling for parental education, sex, reading achievement, speed of numeral processing, fluency of symbolic number processing, intelligence, and the central executive component of working memory. The algebraic tasks assessed accuracy in placing x,y pairs in the coordinate plane, speed and accuracy of expression evaluation, and schema memory for algebra equations. ANS acuity was related to accuracy of placements in the coordinate plane and expression evaluation but not to schema memory. Frequency of fact retrieval errors was related to schema memory but not to coordinate plane or expression evaluation accuracy. The results suggest that the ANS may contribute to or be influenced by spatial-numerical and numerical-only quantity judgments in algebraic contexts, whereas difficulties in committing addition facts to long-term memory may presage slow formation of memories for the basic structure of algebra equations. More generally, the results suggest that different brain and cognitive systems are engaged during the learning of different components of algebraic competence while controlling for demographic and domain general abilities. PMID:26255604

  13. Lead-Induced Impairments in the Neural Processes Related to Working Memory Function

    PubMed Central

    Jin, Seong-Uk; Park, Jang Woo; Kim, Yang-Tae; Ryeom, Hun-Kyu; Lee, Jongmin; Suh, Kyung Jin; Kim, Suk Hwan; Park, Sin-Jae; Jeong, Kyoung Sook; Ham, Jung-O; Kim, Yangho; Chang, Yongmin

    2014-01-01

    Background It is well known that lead exposure induces neurotoxic effects, which can result in a variety of neurocognitive dysfunction. Especially, occupational lead exposures in adults are associated with decreases in cognitive performance including working memory. Despite recent advances in human neuroimaging techniques, the neural correlates of lead-exposed cognitive impairment remain unclear. Therefore, this study was aimed to compare the neural activations in relation to working memory function between the lead-exposed subjects and healthy controls. Methodology/Principal Findings Thirty-one lead-exposed subjects and 34 healthy subjects performed an n-back memory task during MRI scan. We performed fMRI using the 1-back and 2-back memory tasks differing in cognitive demand. Functional MRI data were analyzed using within- and between-group analysis. We found that the lead-exposed subjects showed poorer working memory performance during high memory loading task than the healthy subjects. In addition, between-group analyses revealed that the lead-exposed subjects showed reduced activation in the dorsolateral prefrontal cortex, ventrolateral prefrontal cortex, pre supplementary motor areas, and inferior parietal cortex. Conclusions/Significance Our findings suggest that functional abnormalities in the frontoparietal working memory network might contribute to impairments in maintenance and manipulation of working memory in the lead-exposed subjects. PMID:25141213

  14. Low working memory capacity is only spuriously related to poor reading comprehension

    PubMed Central

    Van Dyke, Julie A.; Johns, Clinton L.; Kukona, Anuenue

    2014-01-01

    Accounts of comprehension failure, whether in the case of readers with poor skill or when syntactic complexity is high, have overwhelmingly implicated working memory capacity as the key causal factor. However, extant research suggests that this position is not well supported by evidence on the span of active memory during online sentence processing, nor is it well motivated by models that make explicit claims about the memory mechanisms that support language processing. The current study suggests that sensitivity to interference from similar items in memory may provide a better explanation of comprehension failure. Through administration of a comprehensive skill battery, we found that the previously observed association of working memory with comprehension is likely due to the collinearity of working memory with many other reading-related skills, especially IQ. In analyses which removed variance shared with IQ, we found that receptive vocabulary knowledge was the only significant predictor of comprehension performance in our task out of a battery of 24 skill measures. In addition, receptive vocabulary and non-verbal memory for serial order—but not simple verbal memory or working memory—were the only predictors of reading times in the region where interference had its primary affect. We interpret these results in light of a model that emphasizes retrieval interference and the quality of lexical representations as key determinants of successful comprehension. PMID:24657820

  15. Phase of Spontaneous Slow Oscillations during Sleep Influences Memory-Related Processing of Auditory Cues

    PubMed Central

    Creery, Jessica D.; Paller, Ken A.

    2016-01-01

    Slow oscillations during slow-wave sleep (SWS) may facilitate memory consolidation by regulating interactions between hippocampal and cortical networks. Slow oscillations appear as high-amplitude, synchronized EEG activity, corresponding to upstates of neuronal depolarization and downstates of hyperpolarization. Memory reactivations occur spontaneously during SWS, and can also be induced by presenting learning-related cues associated with a prior learning episode during sleep. This technique, targeted memory reactivation (TMR), selectively enhances memory consolidation. Given that memory reactivation is thought to occur preferentially during the slow-oscillation upstate, we hypothesized that TMR stimulation effects would depend on the phase of the slow oscillation. Participants learned arbitrary spatial locations for objects that were each paired with a characteristic sound (eg, cat–meow). Then, during SWS periods of an afternoon nap, one-half of the sounds were presented at low intensity. When object location memory was subsequently tested, recall accuracy was significantly better for those objects cued during sleep. We report here for the first time that this memory benefit was predicted by slow-wave phase at the time of stimulation. For cued objects, location memories were categorized according to amount of forgetting from pre- to post-nap. Conditions of high versus low forgetting corresponded to stimulation timing at different slow-oscillation phases, suggesting that learning-related stimuli were more likely to be processed and trigger memory reactivation when they occurred at the optimal phase of a slow oscillation. These findings provide insight into mechanisms of memory reactivation during sleep, supporting the idea that reactivation is most likely during cortical upstates. SIGNIFICANCE STATEMENT Slow-wave sleep (SWS) is characterized by synchronized neural activity alternating between active upstates and quiet downstates. The slow-oscillation upstates are

  16. Working memory performance inversely predicts spontaneous delta and theta-band scaling relations.

    PubMed

    Euler, Matthew J; Wiltshire, Travis J; Niermeyer, Madison A; Butner, Jonathan E

    2016-04-15

    Electrophysiological studies have strongly implicated theta-band activity in human working memory processes. Concurrently, work on spontaneous, non-task-related oscillations has revealed the presence of long-range temporal correlations (LRTCs) within sub-bands of the ongoing EEG, and has begun to demonstrate their functional significance. However, few studies have yet assessed the relation of LRTCs (also called scaling relations) to individual differences in cognitive abilities. The present study addressed the intersection of these two literatures by investigating the relation of narrow-band EEG scaling relations to individual differences in working memory ability, with a particular focus on the theta band. Fifty-four healthy adults completed standardized assessments of working memory and separate recordings of their spontaneous, non-task-related EEG. Scaling relations were quantified in each of the five classical EEG frequency bands via the estimation of the Hurst exponent obtained from detrended fluctuation analysis. A multilevel modeling framework was used to characterize the relation of working memory performance to scaling relations as a function of general scalp location in Cartesian space. Overall, results indicated an inverse relationship between both delta and theta scaling relations and working memory ability, which was most prominent at posterior sensors, and was independent of either spatial or individual variability in band-specific power. These findings add to the growing literature demonstrating the relevance of neural LRTCs for understanding brain functioning, and support a construct- and state-dependent view of their functional implications. PMID:26872594

  17. The relation between working memory components and ADHD symptoms from a developmental perspective.

    PubMed

    Tillman, Carin; Eninger, Lilianne; Forssman, Linda; Bohlin, Gunilla

    2011-01-01

    The objective was to examine the relations between attention deficit hyperactivity disorder (ADHD) symptoms and four working memory (WM) components (short-term memory and central executive in verbal and visuospatial domains) in 284 6-16-year-old children from the general population. The results showed that verbal and visuospatial short-term memory and verbal central executive uniquely contributed to inattention symptoms. Age interacted with verbal short-term memory in predicting inattention, with the relation being stronger in older children. These findings support the notion of ADHD as a developmental disorder, with changes in associated neuropsychological deficits across time. The results further indicate ADHD-related deficits in several specific WM components. PMID:21347920

  18. The influence of object relative size on priming and explicit memory.

    PubMed

    Uttl, Bob; Graf, Peter; Siegenthaler, Amy L

    2008-01-01

    We investigated the effects of object relative size on priming and explicit memory for color photos of common objects. Participants were presented with color photos of pairs of objects displayed in either appropriate or inappropriate relative sizes. Implicit memory was assessed by speed of object size ratings whereas explicit memory was assessed by an old/new recognition test. Study-to-test changes in relative size reduced both priming and explicit memory and had large effects for objects displayed in large vs. small size at test. Our findings of substantial size-specific influences on priming with common objects under some but not other conditions are consistent with instance views of object perception and priming but inconsistent with structural description views. PMID:18769670

  19. Mitigation of cache memory using an embedded hard-core PPC440 processor in a Virtex-5 Field Programmable Gate Array.

    SciTech Connect

    Learn, Mark Walter

    2010-02-01

    Sandia National Laboratories is currently developing new processing and data communication architectures for use in future satellite payloads. These architectures will leverage the flexibility and performance of state-of-the-art static-random-access-memory-based Field Programmable Gate Arrays (FPGAs). One such FPGA is the radiation-hardened version of the Virtex-5 being developed by Xilinx. However, not all features of this FPGA are being radiation-hardened by design and could still be susceptible to on-orbit upsets. One such feature is the embedded hard-core PPC440 processor. Since this processor is implemented in the FPGA as a hard-core, traditional mitigation approaches such as Triple Modular Redundancy (TMR) are not available to improve the processor's on-orbit reliability. The goal of this work is to investigate techniques that can help mitigate the embedded hard-core PPC440 processor within the Virtex-5 FPGA other than TMR. Implementing various mitigation schemes reliably within the PPC440 offers a powerful reconfigurable computing resource to these node-based processing architectures. This document summarizes the work done on the cache mitigation scheme for the embedded hard-core PPC440 processor within the Virtex-5 FPGAs, and describes in detail the design of the cache mitigation scheme and the testing conducted at the radiation effects facility on the Texas A&M campus.

  20. Early age-related changes in episodic memory retrieval as revealed by event-related potentials.

    PubMed

    Guillaume, Cécile; Clochon, Patrice; Denise, Pierre; Rauchs, Géraldine; Guillery-Girard, Bérengère; Eustache, Francis; Desgranges, Béatrice

    2009-01-28

    Familiarity is better preserved than recollection in ageing. The age at which changes first occur and the slope of the subsequent decline, however, remain unclear. In this study, we investigated changes in episodic memory, by using event-related potentials (ERPs) in young (m=24), middle-aged (m=58) and older (m=70) adults. Although behavioural performance did not change before the age of 65 years, changes in ERP correlates were already present in the middle-aged adults. The ERP correlates of recollection and monitoring processes were the first to be affected by ageing, with a linear decrease as age increased. Conversely, the ERP correlate of familiarity remained unchanged, at least up to the age of 65 years. These results suggest a differential time course for the age effects on episodic retrieval. PMID:19104457

  1. [Current understanding of sleep, dreaming and related memory consolidation].

    PubMed

    Han, Victor Z; Shi, Jun-Han

    2013-12-01

    Sleep is a naturally recurring state found throughout the animal kingdom and characterized by a reversible loss of consciousness. Although in humans the daily amount of sleep decreases with aging, the total amount of time spent for sleep is estimated as up to one-third of one's lifetime. In mammals, sleep shows a clear daily rhythmicity as well as nightly phases, which are strongly controlled by the circadian clock located in the hypothalamic suprachiasmatic nuclei and are also regulated by ambient light. While it is certain that sleep is critical for survival in general, the functional significance of sleep is still under investigation. Dreaming is a common psychological phenomenon occurring during human sleep, yet its content and natural function, if any, are still a matter of debate. In recent years, accumulated evidence strongly supports the notion that new information acquired during the day time is processed and transformed into long-term memory in a complicated and sophisticated way during sleeping. Such information processing is commonly referred to as memory consolidation. PMID:24665738

  2. The Associative Memory Deficit in Aging Is Related to Reduced Selectivity of Brain Activity during Encoding.

    PubMed

    Saverino, Cristina; Fatima, Zainab; Sarraf, Saman; Oder, Anita; Strother, Stephen C; Grady, Cheryl L

    2016-09-01

    Human aging is characterized by reductions in the ability to remember associations between items, despite intact memory for single items. Older adults also show less selectivity in task-related brain activity, such that patterns of activation become less distinct across multiple experimental tasks. This reduced selectivity or dedifferentiation has been found for episodic memory, which is often reduced in older adults, but not for semantic memory, which is maintained with age. We used fMRI to investigate whether there is a specific reduction in selectivity of brain activity during associative encoding in older adults, but not during item encoding, and whether this reduction predicts associative memory performance. Healthy young and older adults were scanned while performing an incidental encoding task for pictures of objects and houses under item or associative instructions. An old/new recognition test was administered outside the scanner. We used agnostic canonical variates analysis and split-half resampling to detect whole-brain patterns of activation that predicted item versus associative encoding for stimuli that were later correctly recognized. Older adults had poorer memory for associations than did younger adults, whereas item memory was comparable across groups. Associative encoding trials, but not item encoding trials, were predicted less successfully in older compared with young adults, indicating less distinct patterns of associative-related activity in the older group. Importantly, higher probability of predicting associative encoding trials was related to better associative memory after accounting for age and performance on a battery of neuropsychological tests. These results provide evidence that neural distinctiveness at encoding supports associative memory and that a specific reduction of selectivity in neural recruitment underlies age differences in associative memory. PMID:27082043

  3. Tracking the intrusion of unwanted memories into awareness with event-related potentials.

    PubMed

    Hellerstedt, Robin; Johansson, Mikael; Anderson, Michael C

    2016-08-01

    Involuntary retrieval of unwanted memories is a common symptom in several clinical disorders, including post-traumatic stress disorder. With an aim to track the temporal dynamics of such memory intrusions, we recorded electrophysiological measures of brain activity while participants engaged in a Think/No-Think task. We presented the left hand word (the cue) of previously encoded word pairs in green or red font. We asked participants to think of the associated right hand word (the associate) when the cue appeared in green (Think condition) and to avoid thinking of the associate when the cue appeared in red (No-Think condition). To isolate cases when participants experienced an intrusive memory, at the end of each trial, participants judged whether the response had come to mind; we classified memories that came to mind during No-Think trials, despite efforts to stop retrieval, as intrusions. In an event-related potential (ERP) analysis, we observed a negative going slow wave (NSW) effect that indexed the duration of a trace in mnemonic awareness; whereas voluntary retrieval and maintenance of the associate was related to a sustained NSW that lasted throughout the 3-s recording epoch, memory intrusions generated short-lived NSWs that were rapidly truncated. Based on these findings, we hypothesize that the intrusion-NSW reflects the associate briefly penetrating working memory. More broadly, these findings exploit the high temporal resolution of ERPs to track the online dynamics of memory intrusions. PMID:27396675

  4. Insulin-like growth factor 2 rescues aging-related memory loss in rats.

    PubMed

    Steinmetz, Adam B; Johnson, Sarah A; Iannitelli, Dylan E; Pollonini, Gabriella; Alberini, Cristina M

    2016-08-01

    Aging is accompanied by declines in memory performance, and particularly affects memories that rely on hippocampal-cortical systems, such as episodic and explicit. With aged populations significantly increasing, the need for preventing or rescuing memory deficits is pressing. However, effective treatments are lacking. Here, we show that the level of the mature form of insulin-like growth factor 2 (IGF-2), a peptide regulated in the hippocampus by learning, required for memory consolidation and a promoter of memory enhancement in young adult rodents, is significantly reduced in hippocampal synapses of aged rats. By contrast, the hippocampal level of the immature form proIGF-2 is increased, suggesting an aging-related deficit in IGF-2 processing. In agreement, aged compared to young adult rats are deficient in the activity of proprotein convertase 2, an enzyme that likely mediates IGF-2 posttranslational processing. Hippocampal administration of the recombinant, mature form of IGF-2 rescues hippocampal-dependent memory deficits and working memory impairment in aged rats. Thus, IGF-2 may represent a novel therapeutic avenue for preventing or reversing aging-related cognitive impairments. PMID:27318130

  5. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    NASA Astrophysics Data System (ADS)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at -17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at -14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  6. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack

    SciTech Connect

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-15

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack under a maximal processing temperature of 300 {sup o}C. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 10{sup 3} P/E cycles, and a memory window of 1.1 V was retained after 10{sup 5} s retention time.

  7. Spatial working memory deficits in schizophrenia patients and their first degree relatives from Palau, Micronesia.

    PubMed

    Myles-Worsley, Marina; Park, Sohee

    2002-08-01

    Spatial working memory deficits associated with dorsolateral prefrontal dysfunction have been found in Caucasian samples of schizophrenia patients and their first-degree relatives. This study evaluated spatial working memory function in affected and unaffected members of multiplex schizophrenia families from the Republic of Palau to determine whether the spatial working memory deficits associated with schizophrenia extend to this non-Caucasian population. Palau is an isolated island nation in Micronesia with an elevated prevalence of schizophrenia and an aggregation of cases in large multigenerational families. Our objective was to evaluate the potential for spatial working memory function to serve as one of multiple endophenotypes in a genetic linkage study of these Palauan schizophrenia families. A spatial delayed response task requiring resistance to distraction and a sensorimotor control task were used to assess spatial working memory in 32 schizophrenia patients, 28 of their healthy first-degree relatives, and 19 normal control subjects. Schizophrenia patients and their relatives were significantly less accurate than normal control subjects on the spatial delayed response task but not on the sensorimotor control task. On both tasks, patients and relatives were slower to respond than the normal controls. There were no age or gender effects on accuracy, and working memory performance in schizophrenia patients was not significantly correlated with medication dosage. In summary, spatial working memory deficits that have been found in Caucasian schizophrenia patients and relatives were confirmed in this isolated Pacific Island family sample. These results suggest that spatial working memory deficits may be a potentially useful addition to the endophenotypic characterization of family members to be used in a comprehensive genome wide linkage analysis of these Palauan families. PMID:12210274

  8. Examining Event-Related Potential (ERP) Correlates of Decision Bias in Recognition Memory Judgments

    PubMed Central

    Hill, Holger; Windmann, Sabine

    2014-01-01

    Memory judgments can be based on accurate memory information or on decision bias (the tendency to report that an event is part of episodic memory when one is in fact unsure). Event related potentials (ERP) correlates are important research tools for elucidating the dynamics underlying memory judgments but so far have been established only for investigations of accurate old/new discrimination. To identify the ERP correlates of bias, and observe how these interact with ERP correlates of memory, we conducted three experiments that manipulated decision bias within participants via instructions during recognition memory tests while their ERPs were recorded. In Experiment 1, the bias manipulation was performed between blocks of trials (automatized bias) and compared to trial-by-trial shifts of bias in accord with an external cue (flexibly controlled bias). In Experiment 2, the bias manipulation was performed at two different levels of accurate old/new discrimination as the memory strength of old (studied) items was varied. In Experiment 3, the bias manipulation was added to another, bottom-up driven manipulation of bias induced via familiarity. In the first two Experiments, and in the low familiarity condition of Experiment 3, we found evidence of an early frontocentral ERP component at 320 ms poststimulus (the FN320) that was sensitive to the manipulation of bias via instruction, with more negative amplitudes indexing more liberal bias. By contrast, later during the trial (500–700 ms poststimulus), bias effects interacted with old/new effects across all three experiments. Results suggest that the decision criterion is typically activated early during recognition memory trials, and is integrated with retrieved memory signals and task-specific processing demands later during the trial. More generally, the findings demonstrate how ERPs can help to specify the dynamics of recognition memory processes under top-down and bottom-up controlled retrieval conditions. PMID

  9. The Role of Hippocampal Iron Concentration and Hippocampal Volume in Age-Related Differences in Memory

    PubMed Central

    Rodrigue, Karen M.; Daugherty, Ana M.; Haacke, E. Mark; Raz, Naftali

    2013-01-01

    The goal of this study was to examine the relationships between 2 age-sensitive indices of brain integrity—volume and iron concentration—and the associated age differences in memory performance. In 113 healthy adults (age 19–83 years), we measured the volume and estimated iron concentration in the hippocampus (HC), caudate nucleus (Cd), and primary visual cortex (VC) in vivo with T2* relaxation times, and assessed memory performance with multiple tests. We applied structural equation modeling to evaluate the contribution of individual differences in 2 indices of integrity, volume and T2*, to age-related memory variance. The results show that in healthy adults, age differences in memory can be explained in part by individual differences in HC volume that in turn are associated with differences in HC iron concentration. Lower memory scores were linked to smaller HC and higher HC iron concentration. No such associations were noted for Cd and VC. We conclude that the association between age-related declines in memory and reduced hippocampal volume may reflect the impact of oxidative stress related to increase in free iron concentration. Longitudinal follow-up is needed to test whether altered iron homeostasis in the HC is an early marker for age-related cognitive decline. PMID:22645251

  10. Training Working Memory in Childhood Enhances Coupling between Frontoparietal Control Network and Task-Related Regions

    PubMed Central

    Barnes, Jessica J.; Nobre, Anna Christina; Woolrich, Mark W.; Baker, Kate

    2016-01-01

    Working memory is a capacity upon which many everyday tasks depend and which constrains a child's educational progress. We show that a child's working memory can be significantly enhanced by intensive computer-based training, relative to a placebo control intervention, in terms of both standardized assessments of working memory and performance on a working memory task performed in a magnetoencephalography scanner. Neurophysiologically, we identified significantly increased cross-frequency phase amplitude coupling in children who completed training. Following training, the coupling between the upper alpha rhythm (at 16 Hz), recorded in superior frontal and parietal cortex, became significantly coupled with high gamma activity (at ∼90 Hz) in inferior temporal cortex. This altered neural network activity associated with cognitive skill enhancement is consistent with a framework in which slower cortical rhythms enable the dynamic regulation of higher-frequency oscillatory activity related to task-related cognitive processes. SIGNIFICANCE STATEMENT Whether we can enhance cognitive abilities through intensive training is one of the most controversial topics of cognitive psychology in recent years. This is particularly controversial in childhood, where aspects of cognition, such as working memory, are closely related to school success and are implicated in numerous developmental disorders. We provide the first neurophysiological account of how working memory training may enhance ability in childhood, using a brain recording technique called magnetoencephalography. We borrowed an analysis approach previously used with intracranial recordings in adults, or more typically in other animal models, called “phase amplitude coupling.” PMID:27559180