Science.gov

Sample records for ge intermediate layer

  1. GaAs/Si epitaxial integration utilizing a two-step, selectively grown Ge intermediate layer

    NASA Astrophysics Data System (ADS)

    Cederberg, Jeffrey G.; Leonhardt, Darin; Sheng, Josephine J.; Li, Qiming; Carroll, Malcolm S.; Han, Sang M.

    2010-04-01

    We describe efforts to epitaxially integrate GaAs with Si, using thin, relaxed Ge layers. The Ge films are deposited by molecular beam epitaxy using a self-assembled, selective-area growth technique, where atomic Ge etches an SiO 2 mask layer and then grows from pores extending to the Si substrate. The resulting Ge film coalesces over the SiO 2 mask and is planarized, using H 2O 2-based chemical-mechanical polishing. We subsequently deposit a GaAs/AlAs heterostructure on the polished Ge on Si substrate by metal-organic vapor phase epitaxy. While the initial Ge films were completely relaxed and dislocation-free, they contain a high density of stacking faults that propagate through the GaAs/AlAs heterostructure. These stacking faults create phase domains that appear as non-radiative recombination centers in cathodoluminescence images. Further development of two-step Ge epitaxy with an anneal near the Ge melting point eliminates stacking faults in the Ge, but decomposes the SiO 2 mask allowing threading dislocations to form and propagate through the GaAs/AlAs heterostructure. We discuss our strategy to prevent the loss of the SiO 2 mask and thus reduce threading dislocations.

  2. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    NASA Astrophysics Data System (ADS)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  3. Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers

    NASA Astrophysics Data System (ADS)

    Schwartz, B.; Arguirov, T.; Kittler, M.; Oehme, M.; Kostecki, K.; Kasper, E.; Schulze, J.

    2015-02-01

    We analyzed Ge- and GeSn/Ge multiple quantum well (MQW) light emitting diodes (LEDs). The structures were grown by molecular beam epitaxy (MBE) on Si. In the Ge LEDs the active layer was 300 nm thick. Sb doping was ranging from 1×1018 to 1×1020 cm-3. An unintentionally doped Ge-layer served as reference. The LEDs with the MQWs consist of ten alternating GeSn/Ge-layers. The Ge-layers were 10 nm thick and the GeSn-layers were grown with 6 % Sn and thicknesses between 6 and 12 nm. The top contact of all LEDs was identical. Accordingly, the light extraction is comparable. The electroluminescence (EL) analysis was performed under forward bias at different currents. Sample temperatures between <300 K and 80 K were studied. For the reference LED the direct transition at 0.8 eV dominates. With increasing current the peak is slightly redshifted due to Joule heating. Sb doping of the active Ge-layer affects the intensity and at 3×1019 cm-3 the strongest emission appears. It is ~4 times higher as compared to the reference. Moreover a redshift of the peak position is caused by bandgap narrowing. The LEDs with undoped GeSn/Ge-MQWs as active layer show a very broad luminescence band with a peak around 0.65 eV, pointing to a dominance of the GeSn-layers. The light emission intensity is at least 17 times stronger as compared to the reference Ge-LED. Due to incorporation of Sn in the MQWs the active layer should approach to a direct semiconductor. In indirect Si and Ge we observed an increase of intensity with increasing temperature, whereas the intensity of GeSn/Ge-MQWs was much less affected. But a deconvolution of the spectra revealed that the energy of indirect transition in the wells is still below the one of the direct transition.

  4. Characterization of High Ge Content SiGe Heterostructures and Graded Alloy Layers Using Spectroscopic Ellipsometry

    NASA Technical Reports Server (NTRS)

    Heyd, A. R.; Alterovitz, S. A.; Croke, E. T.

    1995-01-01

    Si(x)Ge(1-x)heterostructures on Si substrates have been widely studied due to the maturity of Si technology. However, work on Si(x)Ge)1-x) heterostructures on Ge substrates has not received much attention. A Si(x)Ge(1-x) layer on a Si substrate is under compressive strain while Si(x)Ge(1-x) on Ge is under tensile strain; thus the critical points will behave differently. In order to accurately characterize high Ge content Si(x)Ge(1-x) layers the energy shift algorithm used to calculate alloy compositions, has been modified. These results have been used along with variable angle spectroscopic ellipsometry (VASE) measurements to characterize Si(x)Ge(1-x)/Ge superlattices grown on Ge substrates. The results agree closely with high resolution x-ray diffraction measurements made on the same samples. The modified energy shift algorithm also allows the VASE analysis to be upgraded in order to characterize linearly graded layers. In this work VASE has been used to characterize graded Si(x)Ge(1-x) layers in terms of the total thickness, and the start and end alloy composition. Results are presented for a 1 micrometer Si(x)Ge(1-x) layer linearly graded in the range 0.5 less than or equal to x less than or equal to 1.0.

  5. Formation process of high-purity Ge-on-insulator layers by Ge-condensation technique

    NASA Astrophysics Data System (ADS)

    Nakaharai, S.; Tezuka, T.; Hirashita, N.; Toyoda, E.; Moriyama, Y.; Sugiyama, N.; Takagi, S.

    2009-01-01

    Formation process of Ge-on-insulator (GOI) layers by Ge condensation with very high purity of Ge is clarified in terms of diffusion behaviors of Si and Ge in a SiGe layer. It is shown that the diffusion behavior affects the Ge condensation process, and the purity of GOI layer can be determined by the relation between oxidation and diffusion of Si. Experimental results support a model of GOI formation that the selective oxidation of Si in SiGe continues until the formation of a GOI layer with the residual Si fraction of less than 0.01%. Based on this model, we quantitatively clarify the reason why GOI layers can reach very low residual Si fraction without oxidizing Ge by calculating the diffusion behavior of Si during the Ge condensation process. As a result, we have found that the thermal diffusion of Si is sufficiently fast so that the selective oxidation of Si can continue during the GOI formation process until the averaged residual Si fraction in the SGOI layer becomes lower than 0.03%, which is essentially consistent with the experimental results. In addition, we have found that, even if the GOI layer is thick, the Ge purity of GOI layer can approach 100% infinitely in principle by enhancing the Si diffusion in SGOI compared to the oxidation rate of SGOI.

  6. Fabrication of GeO2 layers using a divalent Ge precursor

    NASA Astrophysics Data System (ADS)

    Perego, M.; Scarel, G.; Fanciulli, M.; Fedushkin, I. L.; Skatova, A. A.

    2007-04-01

    Good quality and perfectly stoichiometric GeO2 layers are promising interlayers to be implemented in alternative devices based on high dielectric constant oxide/Ge(100). In this work, the authors report on the growth by atomic layer deposition of GeO2 films using a divalent Ge precursor combined with O3. The films are composed of smooth and perfectly stoichiometric GeO2. The contamination level is extremely low. The deposited GeO2 films have a band gap of 5.81±0.04eV. The conduction and valence band offsets at the GeO2/Ge heterojunction are found to be 0.6±0.1 and 4.5±0.1eV, respectively.

  7. Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

    SciTech Connect

    Hudait, Mantu K.; Zhu Yan

    2013-03-21

    Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

  8. Excess carrier lifetimes in Ge layers on Si

    SciTech Connect

    Geiger, R. E-mail: hans.sigg@psi.ch; Sigg, H. E-mail: hans.sigg@psi.ch; Frigerio, J.; Chrastina, D.; Isella, G.; Süess, M. J.; Spolenak, R.; Faist, J.

    2014-02-10

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6 ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3 ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  9. An ultra-thin buffer layer for Ge epitaxial layers on Si

    SciTech Connect

    Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K.; Sawano, K.

    2013-03-25

    Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

  10. Ion beam synthesis of SiGe alloy layers

    NASA Astrophysics Data System (ADS)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into (100) oriented Si wafers yielded various Ge peak concentrations after the following doses, 2x10(exp 16)cm(exp -2), 3x10(exp 16)cm(exp -2), and 5x10(exp 16)cm(exp -2). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800 C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3x10(exp 16)cm(exp -2) dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at percent peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at percent Ge peak show high densities of misfit-induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at percent Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C greater than 0.55 at percent, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at percent C peak concentration under a 12 at percent Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial (100) planar interface decomposes into a (111) faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  11. Ion beam synthesis of SiGe alloy layers

    SciTech Connect

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  12. Characterization of SiGe/Ge heterostructures and graded layers using variable angle spectroscopic ellipsometry

    NASA Technical Reports Server (NTRS)

    Croke, E. T.; Wang, K. L.; Heyd, A. R.; Alterovitz, S. A.; Lee, C. H.

    1996-01-01

    Variable angle spectroscopic ellipsometry (VASE) has been used to characterize Si(x)Ge(1-x)/Ge superlattices (SLs) grown on Ge substrates and thick Si(x)Ge(1-x)/Ge heterostructures grown on Si substrates. Our VASE analysis yielded the thicknesses and alloy compositions of all layers within the optical penetration depth of the surface. In addition, strain effects were observed in the VASE results for layers under both compressive and tensile strain. Results for the SL structures were found to be in close agreement with high resolution x-ray diffraction measurements made on the same samples. The VASE analysis has been upgraded to characterize linearly graded Si(x)Ge(1-x) buffer layers. The algorithm has been used to determine the total thickness of the buffer layer along with the start and end alloy composition by breaking the total thickness into many (typically more than 20) equal layers. Our ellipsometric results for 1 (mu)m buffer layers graded in the ranges 0.7 less than or = x less than or = 1.0, and 0.5 less than or = x less than or = 1.0 are presented, and compare favorably with the nominal values.

  13. Atomic Layer Epitaxy of Si and Ge on Si(100)-(2x1)

    NASA Astrophysics Data System (ADS)

    Veyan, Jean-Francois; Choi, Heesung; Ballard, Joshua; McDonnell, Stephen; Kirk, Willey P.; Wallace, Robert M.; Randall, John; Cho, Kyeongjae; Chabal, Yves J.

    2011-03-01

    Atomic Layer Epitaxy of Si and Ge on Si(100) surface using disilane (Si 2 H6) and digermane (Ge 2 H6) as precursors is a critical step for constructing 3-D nano-structures, and is indispensable for Atomically Precise Manufacturing of new devices such as quantum dots. Using IRAS and STM together with DFT calculations, we show that Si 2 H6 chemisorbs on clean Si(100)-(2x1) via beta-hydride elimination pathway, involving the intermediate states Si-H and Si- Si H2 - Si H3 . Thermal decomposition of the chemisorbed Si 2 H5 leads to the formation of Si 2 H2 as an added dimer rotated 90 degrees with respect to the initial dimer row. A similar chemisorption pathway is observed for Ge 2 H6 on Si(100)x(2x1). The thermal decomposition of Ge 2 H5 involves the migration of H from Ge to Si, and Ge ad-dimer formation. Evidence for Ge epitaxial growth on Si(100)x(2x1) using Ge 2 H6 will be presented.

  14. Si/NiFe seed layers for Ru intermediate layer in perpendicular magnetic recording tape media

    NASA Astrophysics Data System (ADS)

    Saemma, Gaku; Takahashi, Shota; Matsunuma, Satoshi; Inoue, Tetsutaro; Nakagawa, Shigeki

    2012-04-01

    Si/NiFe seed layers prepared at room temperature is effective to attain better c-axis orientation of Ru intermediate layer in the FeCoB/Ru/CoPtCr-SiO2 granular type recording tape media. The crystallinity and c-axis orientation of Ru layer with Si/NiFe seed layers were improved than that without Si/NiFe seed layer deposited on the laminated FeCoB SULs. When the Ru is thicker than 8 nm, Δθ50 of the CoPtCr-SiO2 recording layer shows small value of about 6.5°. Furthermore, even though the Ru thickness was only 3 nm, the Δθ50 retained comparatively small value of 8.0°. Si/NiFe layer is effective as a seed layer for the Ru intermediate layer.

  15. Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

    PubMed

    Zhang, Liangliang; Li, Huanglong; Guo, Yuzheng; Tang, Kechao; Woicik, Joseph; Robertson, John; McIntyre, Paul C

    2015-09-23

    Effective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding goal of research on germanium metal-oxide-semiconductor devices. In this paper, we use photoelectron spectroscopy to probe the formation of a GeO2 interface layer between an atomic layer deposited Al2O3 gate dielectric and a Ge(100) substrate during forming gas anneal (FGA). Capacitance- and conductance-voltage data were used to extract the interface trap density energy distribution. These results show selective passivation of interface traps with energies in the top half of the Ge band gap under annealing conditions that produce GeO2 interface layer growth. First-principles modeling of Ge/GeO2 and Ge/GeO/GeO2 structures and calculations of the resulting partial density of states (PDOS) are in good agreement with the experiment results. PMID:26334784

  16. Review of an intermediate-layer lithography approach

    NASA Astrophysics Data System (ADS)

    Luo, Cheng

    2007-04-01

    Conducting polymers, because of their promising potential to replace silicon and metals in building devices, have attracted great attention since the discovery of high conductivity in doped polyacetylene in 1977. Lithographic techniques present significant technical challenges when working with conducting polymers. Sensitivity of conducting polymers to environmental conditions (e.g., air, oxygen, moisture, high temperature and chemical solutions) makes current photolithographic methods unsuitable for patterning the conducting polymers due to the involvement of wet and/or dry etching processes in those methods. Existing non-photolithographic approaches have limitations in throughput, resolution or electrical insulation. Therefore, an intermediate-layer lithography (ILL) approach has been recently developed by my group to produce conducting polymer micro/nanostructures. In the ILL method, an intermediate layer of an electrically insulating polymer is coated between the substrate and a layer of the conducting polymer to be printed. Subsequently, the conducting polymer is printed through mold insertion using a hot-embossing process. The current hot-embossing based methods face the obstacles of residual layer and depth of field (i.e., the height variation in the mold structures). In contrast, the ILL approach does not leave a residual layer in the material of interest, making conducting polymer patterns isolated from one another and avoiding the shorting problem in the electrical applications of these patterns. Furthermore, in the ILL, the height variation potentially existing among the mold structures has been transferred to the intermediate layer, ensuring that all patterns in the mold have been properly transferred to the conducting polymer layer. In addition to conducting polymers, the ILL can also be applied to pattern metals as well as other types of polymers. This paper gives a review of this ILL method and reports the results that we have achieved to date.

  17. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    SciTech Connect

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a corresponding dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.

  18. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE PAGESBeta

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore » dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  19. Silicon solar cell using optimized intermediate reflector layer

    NASA Astrophysics Data System (ADS)

    Khalifa, Ahmed E.; Swillam, Mohamed A.

    2016-03-01

    Thin film silicon based photovoltaic cells have the advantages of using low cost nontoxic abundant constituents and low thermal manufacturing budget. However, better long-term efficiencies need to be achieved overcoming its inherent bad electrical properties of amorphous and/or microcrystalline Silicon. For the goal of achieving best results, multijunction cells of amorphous and microcrystalline silicon thin layers are industrially and lab utilized in addition to using one or more light management techniques such as textured layers, periodic and plasmonic back reflectors, flattened reflective substrates and intermediate reflector layer (IRL) between multijunction cells. The latter, IRL, which is the focus of this paper, serves as spectrally selective layer between different cells of the multijunction silicon thin film solar cell. IRL, reflects to the top cell short wavelength while permitting and scattering longer ones to achieve the best possible short circuit current. In this study, a new optimized periodic design of Intermediate reflector layer in micromorph (two multijunction cells of Microcrystalline and Amorphous Silicon) thin film solar cells is proposed. The optically simulated short circuit current reaches record values for same thickness designs when using all-ZnO design and even better results is anticipated if Lacquer material is used in combination with ZnO. The design methodology used in the paper can be easily applied to different types of IRL materials and also extended to triple and the relatively newly proposed quadruple thin films solar cells.

  20. Tandem photovoltaic cells with a composite intermediate layer

    SciTech Connect

    Travkin, V. V. Pakhomov, G. L.; Luk’anov, A. Yu.; Stuzhin, P. A.

    2015-11-15

    We have fabricated and tested tandem photovoltaic cells containing series-connected subcells of the “oxide–organic semiconductor–metal” type. The organic semiconductors were two phthalocyanine dyes (SubPc and PcVO); Al or Ag:Mg were used as capping metallic electrodes. A semitransparent composite metal–oxide layer formed by molybdenum oxide MoO{sub x} deposited over an ultrathin Al layer is used to join the subcells. Additionally, a MoO{sub x} layer deposited onto glass/ITO substrates serves as an anode buffer in the front subcell, and LiF deposited onto the dye layers serves as a cathode buffer in the front or rear subcells. Upon optimization of the thickness and composition of the intermediate layer, the open circuit voltage U{sub oc} amounts to 1.6 V reflecting total summation of the contributions from the each of the subcells at a wide spectral coating from 300–1000 nm. The fill factor in the tandem cell is not worse than in individually made single cells with the same scheme or in disconnected subcells.

  1. Intermediate coating layer for high temperature rubbing seals for rotary regenerators

    DOEpatents

    Schienle, James L.; Strangman, Thomas E.

    1995-01-01

    A metallic regenerator seal is provided having multi-layer coating comprising a NiCrAlY bond layer, a yttria stabilized zirconia (YSZ) intermediate layer, and a ceramic high temperature solid lubricant surface layer comprising zinc oxide, calcium fluoride, and tin oxide. Because of the YSZ intermediate layer, the coating is thermodynamically stable and resists swelling at high temperatures.

  2. Atomically flat Ge buffer layers and alternating shutter growth of CaGe2 for large area germanane

    NASA Astrophysics Data System (ADS)

    Xu, Jinsong; Katoch, Jyoti; Ahmed, Adam; Pinchuk, Igor; Williams, Robert; McComb, David; Kawakami, Roland

    Germanane (GeH), which is converted from CaGe2 by soaking in HCl acid, has recently attracted interest because of its novel properties, such as large band gap (1.56eV), spin orbit coupling and predictions of high mobility (18000 cm2/Vs). Previously CaGe2 was successfully grown on Ge(111) substrates by molecular beam epitaxy (MBE) growth. But there were cracks between µm-sized islands, which is not desirable for scientific study and application, and limits the material quality. By growing atomically flat Ge buffer layers and using alternating shutter MBE growth, we are able to grow crack-free, large area films of CaGe2 films. Reflection high energy electron diffraction (RHEED) patterns of Ge buffer layer and CaGe2 indicates high quality two dimensional surfaces, which is further confirmed by atomic force microscopy (AFM), showing atomically flat and uniform Ge buffer layer and CaGe2. The appearance of Laue oscillation in X-ray diffraction (XRD) and Kiessig fringes in X-ray reflectivity (XRR) proves the uniformity of CaGe2 film and the smoothness of the interface. The high quality of CaGe2 film makes it promising to explore novel properties of GeH. Funded by NSF MRSEC DMR-1420451.

  3. On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

    NASA Astrophysics Data System (ADS)

    Arapkina, Larisa V.; Yuryev, Vladimir A.

    2013-09-01

    Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along ⟨110⟩ directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

  4. Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures

    SciTech Connect

    Zhang, Rui; School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 ; Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi

    2013-02-25

    The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

  5. The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process

    NASA Astrophysics Data System (ADS)

    Nakaharai, S.; Tezuka, T.; Hirashita, N.; Toyoda, E.; Moriyama, Y.; Sugiyama, N.; Takagi, S.

    2007-01-01

    The formation process of crystal defects in a Ge-on-insulator (GOI) layer fabricated by oxidizing a SiGe-on-insulator (SGOI) layer, known as the Ge-condensation technique, is studied systematically. It is found that the crystal defects in the GOI layer are threading dislocations and microtwins that are formed mainly in the Ge fraction range larger than ~0.5. Also, when the Ge fraction reaches ~1 and the GOI layer is formed, the density of microtwins significantly decreases and their width considerably increases. The relaxation of compressive strain, observed in SGOI and GOI layers, is not attributable to the formation of the microtwins, but to the perfect dislocations that cannot be detected as defects in the lattice image.

  6. Photoconductivity of ultra-thin Ge(GeSn) layers grown in Si by low-temperature molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Talochkin, A. B.; Chistokhin, I. B.; Mashanov, V. I.

    2016-04-01

    Photoconductivity (PC) spectra of Si/Ge(GeSn)/Si structures with the ultra-thin (1.0-2.3 nm) Ge and GeSn alloy layers grown by the low-temperature (T = 100 °C) molecular beam epitaxy are studied. Photoresponse in the range of 1.2-0.4 eV related to light absorption in the buried Ge(GeSn) layer is observed. It is shown that in case of lateral PC, a simple diffusion model can be used to determine the absorption coefficient of this layer α ˜ 105 cm-1. This value is 100 times larger than that of a single Ge quantum dot layer and is reached significantly above the band gap of most bulk semiconductors. The observed absorption is caused by optical transitions between electron and hole states localized at the interfaces. The anomalous high value of α can be explained by the unusual state of Ge(GeSn) layer with high concentration of dangling bonds, the optical properties of which have been predicted theoretically by Knief and von Niessen (Phys. Rev. B 59, 12940 (1999)).

  7. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    PubMed

    Zhang, Liangliang; Guo, Yuzheng; Hassan, Vinayak Vishwanath; Tang, Kechao; Foad, Majeed A; Woicik, Joseph C; Pianetta, Piero; Robertson, John; McIntyre, Paul C

    2016-07-27

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit. PMID:27345195

  8. Barrier enhancement of Ge MSM IR photodetector with Ge layer optimization

    NASA Astrophysics Data System (ADS)

    Asar, Tarık; Özçelik, Süleyman

    2015-12-01

    Germanium thin films were deposited on n-type Silicon substrates with three different sputter power by using DC magnetron sputtering system at room temperature. The structural and morphological properties of the samples have been obtained by means of X-ray diffraction and atomic force microscopy measurements. Then, Germanium metal-semiconductor-metal infrared photodetectors were fabricated on these structures. The carrier recombination lifetime and the diffusion length of the devices were also calculated by using the carrier density and mobility data was obtained from the room temperature Hall Effect measurements. The dark current-voltage measurements of devices were achieved at room temperature. The electrical parameters such as ideality factor, Schottky barrier height, saturation current and series resistance were extracted from dark current-voltage characteristics. Finally, it has been shown that the barrier enhancement of Ge MSM IR photodetector can be achieved by Ge layer optimization.

  9. Investigation of Diffusion Barrier Layers for Bi-Doped Mg2(Si,Ge) Thermoelectric Legs

    NASA Astrophysics Data System (ADS)

    Prahoveanu, Codrin; Laversenne, Laetitia; de Vaulx, Cédric; Bès, Alexandre; Azzouz, Kamel; Lacoste, Ana

    2016-08-01

    The performance of thermoelectric (TE) modules is governed not only by the thermoelectric materials whose properties are capitalized, but also on the quality of the electrical contacts which are ubiquitous in the design of the device. To ensure the necessary stability of the interfaces between the TE materials and the electrodes, diffusion barriers are generally used. In this study, attempts are presented in finding diffusion barriers that would be suitable for Mg2(Si,Ge) TE materials. These involved the deposition by microwave plasma-assisted co-sputtering of intermediate gradient layers starting from Mg and Si, ending up with a Ni layer, or the deposition of metallic layers (Ti, Cr, W and Ta). The effectiveness of the deposited layers as diffusion barriers is assessed after the legs were subjected to a brazing process, with the results favoring the use of gradient layers with a thick Ni layer and metallic layers based on Ta and Cr, despite some adherence issues for the latter.

  10. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect

    Prestat, E. Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A.

    2014-03-10

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  11. Growth and characterization of epitaxial layers of Ge on Si substrates

    SciTech Connect

    Fathy, D.; White, C.W.; Holland, O.W.

    1987-03-01

    Thin single crystalline layers of Ge with atomically sharp boundaries have been formed epitaxially on (100) Si substrates. This was done by /sup 74/Ge ion implantation into Si followed by steam oxidation. Using both Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM), we have found that a Ge layer forms as a result of Ge segregated at the moving SiO/sub 2/ interface during steam oxidation. For a SiO/sub 2/ layer that has swept through the implanted region, essentially all of the Ge is snow-ploughed and no Ge is lost to the oxide layer. The Ge layers and its two bounding interfaces, i.e., Ge/SiO/sub 2/ and Ge/Si, have been characterized as a function of the implantation dose and energy. The thickness of the Ge layer formed is dependent on the implantation dose. Thicknesses from a fraction of a monolayer to greater than 50 monolayers of Ge can be formed on Si by this mechanism. Initially the Ge layer forms a coherent interface with the underlying Si with no misfit dislocations, and misfit dislocations only appear as the thickness of the film is increased.

  12. Formation of alternating interfacial layers in Au-12Ge/Ni joints

    PubMed Central

    Lin, Shih-kang; Tsai, Ming-yueh; Tsai, Ping-chun; Hsu, Bo-hsun

    2014-01-01

    Au-Ge alloys are promising materials for high-power and high-frequency packaging, and Ni is frequently used as diffusion barriers. This study investigates interfacial reactions in Au-12Ge/Ni joints at 300°C and 400°C. For the reactions at 300°C, typical interfacial morphology was observed and the diffusion path was (Au) + (Ge)/NiGe/Ni5Ge3/Ni. However, an interesting phenomenon – the formation of (Au,Ni,Ge)/NiGe alternating layers – was observed for the reactions at 400°C. The diffusion path across the interface was liquid/(Au,Ni,Ge)/NiGe/···/(Au,Ni,Ge)/NiGe/Ni2Ge/Ni. The periodic thermodynamic instability at the NiGe/Ni2Ge interface caused the subsequent nucleation of new (Au,Ni,Ge)/NiGe pairs. The thermodynamic foundation and mechanism of formation of the alternating layers are elaborated in this paper. PMID:24690992

  13. Impact of hydrogen surfactant on crystallinity of Ge1-xSnx epitaxial layers

    NASA Astrophysics Data System (ADS)

    Asano, Takanori; Taoka, Noriyuki; Hozaki, Koya; Takeuchi, Wakana; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2015-04-01

    The effect of a hydrogen surfactant on the crystallinity of a Ge1-xSnx epitaxial layer was investigated. The improvement of crystallinity on the in-plane uniformity of Ge1-xSnx epitaxial layer was observed by X-ray diffuse scattering and transmission electron microscopy. We also observed the decrease in the surface roughness of the Ge1-xSnx epitaxial layer. This indicates the suppression of the three-dimensional growth mode of Ge1-xSnx epitaxial layer due to a compressive strain. In addition, we observed the reduction in acceptor-like defect density in an undoped-Ge1-xSnx epitaxial layer from the capacitance-voltage characteristics of a metal-oxide-semiconductor capacitor. Consequently, introducing hydrogen during the growth leads to the improvement of the crystalline quality of the Ge1-xSnx epitaxial layer.

  14. Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers

    NASA Astrophysics Data System (ADS)

    Shimura, Yosuke; Tsutsui, Norimasa; Nakatsuka, Osamu; Sakai, Akira; Zaima, Shigeaki

    2009-04-01

    We investigated the relationship between Sn precipitation and strain relaxation in Ge1-xSnx buffer layers grown by the compositionally step-graded (CSG) method on a virtual Ge substrate. We found that the strain in the upper Ge1-xSnx layers is reduced by Sn precipitation rather than the lateral propagation of misfit dislocations at the interfaces of upper Ge1-xSnx layers in the CSG method. The critical misfit strain was increased to 5.8 ×10-3 compared with that in our previous work by lowering the temperature of the postdeposition annealing, and a Sn content of 6.3% in the Ge1-xSnx buffer layer was achieved with a large degree of strain relaxation using only two stacked layers of the CSG structure. An in-plane tensile strain of 0.62% in a 30-nm-thick Ge layer fabricated on these Ge1-xSnx buffer layers was achieved.

  15. Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process

    NASA Astrophysics Data System (ADS)

    Kurosawa, Masashi; Ohta, Akio; Araidai, Masaaki; Zaima, Shigeaki

    2016-08-01

    We have developed a new method of growing Si or Ge ultrathin films on a Ag(111) surface by using a Ag-induced layer exchange (ALEX) process toward the creation of 2D honeycomb sheets of Si and Ge, known as silicene and germanene, respectively. In the present paper, we clarify ALEX features, specifically the surface segregation of Si (or Ge) atoms from the underlying substrate, focusing on the annealing temperature and time. Hard X-ray photoelectron spectroscopy analyses demonstrate that surface-segregated Si (or Ge) exists on the Ag surfaces after the epitaxial growth of the Ag layer on Si(111) [or Ge(111)] substrates; the amount of segregated Si (or Ge) can be controlled by a subsequent annealing. Also, we find that the segregation of an ultrathin Si or Ge layer proceeds at an interface between Ag and the AlO x capping layer.

  16. Epitaxial growth and anisotropic strain relaxation of Ge1-xSnx layers on Ge(1 1 0) substrates

    NASA Astrophysics Data System (ADS)

    Asano, Takanori; Shimura, Yosuke; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki

    2013-05-01

    We have investigated the strain relaxation behavior and dislocation structures of Ge1-xSnx epitaxial layers on Ge(1 1 0) substrates. We found that the anisotropic strain relaxation of a Ge0.966Sn0.034 layer along the [0 0 1] direction preferentially occurs during postdeposition annealing over 500 °C. Transmission electron microscopy observation revealed that the anisotropic strain relaxation is attributed to the propagation of misfit dislocations along the two directions of [1¯ 1 0] and <1 1 2> at the Ge1-xSnx/Ge(1 1 0) interface. We found that the propagation of 60° dislocations preferentially occurs, which contributes to the strain relaxation only for the [0 0 1] direction.

  17. Optimization of ISBD embedded SiGe layers to prevent delamination process for MOSFET applications

    NASA Astrophysics Data System (ADS)

    Wasyluk, Joanna; Ge, Yang; Wurster, Kai; Lenski, Markus; Reichel, Carsten

    2015-08-01

    An interaction between in situ boron doped SiGe layers deposited by low pressure chemical vapor deposition and NH3 plasma treatments was studied in this work. It is shown that NH3 plasma strips introduce H atoms into SiGe layer which further leads to unwanted blistering and exfoliation of the SiGe layer. The SiGe layers with varied boron profiles were examined in this work in order to understand influence of B doping on H accumulation. It is shown that B peak at SiGe/Si interface can be modulated by the temperature and pressure changes between the layers' deposition. It was found that less H atoms diffuse into ISBD SiGe layer with higher B peak at Si cap/main SiGe layer. The SiGe layer with removed B peak at buffer/main SiGe layer interface and increased B peak at Si cap was proven to be delamination free and robust for HN3 plasma strips.

  18. GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy

    NASA Astrophysics Data System (ADS)

    Zheng, Jun; Wang, Suyuan; Liu, Zhi; Cong, Hui; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

    2016-01-01

    We report an investigation of normal-incidence GeSn-based p-i-n photodetectors (PDs) with a Ge0.94Sn0.06 active layer grown using sputter epitaxy on a Ge(100) substrate. A low dark current density of 0.24 A/cm2 was obtained at a reverse bias of 1 V. A high optical responsivity of the Ge0.94Sn0.06/Ge p-i-n PDs at zero bias was achieved, with an optical response wavelength extending to 1985 nm. The temperature-dependent optical-response measurement was performed, and a clear redshift absorption edge was observed. This work presents an approach for developing efficient and cost-effective GeSn-based infrared devices.

  19. Self-Diffusion of 31Si and 71Ge in Relaxed Si0.20Ge0.80 Layers

    NASA Astrophysics Data System (ADS)

    Laitinen, P.; Strohm, A.; Huikari, J.; Nieminen, A.; Voss, T.; Grodon, C.; Riihimäki, I.; Kummer, M.; Äystö, J.; Dendooven, P.; Räisänen, J.; Frank, W.

    2002-08-01

    Self-diffusion of implanted 31Si and 71Ge in relaxed Si0.20Ge0.80 layers has been studied in the tempera­ture range 730-950 °C by means of a modified radiotracer technique. The temperature dependences of the diffusion coefficients were found to be Arrhenius-type with activation enthalpies of 3.6eV and 3.5eV and preexponential factors of 7.5×10-3 m2 s-1 and 8.1×10-3 m2 s-1 for 31Si and 71Ge, respectively. These results suggest that, as in Ge, in Si0.20Ge0.80 both 31Si and 71Ge diffuse via a vacancy mechanism. Since in Si0.20Ge0.80 71Ge diffuses only slightly faster than 31Si, in self-diffusion studies on Si-Ge 71Ge radioisotopes may be used as substitutes for the ``uncomfortably'' short-lived 31Si radiotracer atoms.

  20. Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

    NASA Astrophysics Data System (ADS)

    Nakaharai, Shu; Tezuka, Tsutomu; Sugiyama, Naoharu; Moriyama, Yoshihiko; Takagi, Shin-ichi

    2003-10-01

    A strained Ge-on-insulator (GOI) structure with a 7-nm-thick Ge layer was fabricated for applications to high-speed transistors. The GOI layer was formed by thermal oxidation of a strained SiGe layer grown epitaxially on a silicon-on-insulator (SOI) wafer. In transmission electron microscopy measurements, the obtained GOI layer exhibited a single-crystal structure with the identical orientation to an original SOI substrate and a smooth Ge/SiO2 interface. The rms of the surface roughness of the GOI layer was evaluated to be 0.4 nm by atomic force microscopy. The residual Si fraction in the GOI layer was estimated to be lower than the detection limit of Raman spectroscopy of 0.5% and also than the electron energy loss spectroscope measurements of 3%. It was found that the obtained GOI layer was compressively strained with a strain of 1.1%, which was estimated by the Raman spectroscopy. Judging from the observed crystal quality and the strain value, this technique is promising for fabrication of high-mobility strained Ge channel of high-performance GOI metal-insulator-semiconductor (MIS) transistors.

  1. Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO2 insulator layer.

    PubMed

    Ke, Shaoying; Lin, Shaoming; Li, Xin; Li, Jun; Xu, Jianfang; Li, Cheng; Chen, Songyan

    2016-02-01

    The tunneling effect and interface state in the p-Ge/GeO2p-Si structure of a wafer-bonding Ge/Si avalanche photodiode (APD) are investigated. It is found that the thin interfacial GeO2 layer (1-2 nm) formed by the hydrophilic reaction at the wafer-bonding interface significantly affects the performance of the Ge/Si APD. With the increase of the GeO2 thickness, the dark current of the Ge/Si APD decreases enormously due to the blocking effect of this GeO2 layer. Owing to the carrier accumulation in Ge layer under illumination condition, the voltage sharing effect of the GeO2 layer (thicker) becomes serious, leading to the absence of the electric field in Ge layer. The photon-generated electrons at Ge/GeO2 interface can be captured and released by the interface states at certain reverse bias. This can adjust the avalanche current of the Ge/Si APD. The stronger interface recombination induced by the larger interface state density (ISD) results in the decrease of the electric field in Ge layer. This increases the transit time of carriers, which in turn decreases the 3dB-bandwidth. Due to the drastic increase of the dark current (larger ISD), the gain of the Ge/Si APD decreases. PMID:26906771

  2. Long-Wavelength Stacked SiGe/Si Heterojunction Internal Photoemission Infrared Detectors Using Multiple SiGe/Si Layers

    NASA Technical Reports Server (NTRS)

    Park, J. S.; Lin, T. L.; Jones, E. W.; Castillo, H. M. Del; Gunapala, S. D.

    1994-01-01

    Utilizing low temperature silicon molecular beam epitaxy (MBE) growth, long-wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. Using an elemental boron source, high doping concentrations (approximately equal to 4 x 10(sup 20) cm(sup -3)) has been achieved and high crystalline quality multiple Si(sub 0.7)Ge(sub 0.3)/Si layers have been obtained. The detector structure consists of several periods of degenerately boron doped (approximately equal to 4 x 10(sup 20) cm(sup -3)) thin (less than or equal to 50 u Si(sub 0.7)Ge(sub 0.3) layers and undoped thick (approximately equal to 300u Si layers. The multiple p(sup +) - Si(sub 0.7)Ge(sub 0.3)/undoped-Si layers show strong infrared absorption in the long-wavelength regime mainly through free carrier absorption. The stacked Si(sub 0.7)Ge(sub 0.3)/Si HIP detectors with p = 4 x 10(sup 20) cm(sup -3) exhibit strong photoresponse at wavelengths ranging from 2 to 20 (micro)m with quantum efficiencies of about 4% and 1.5% at 10 and 15 (micro)m wavelengths, respectively. The detectors show near ideal thermionic-emission limited dark current characteristics.

  3. Impact of intermediate localized states on nonlinear optical absorption of Ga-Ge-Se nanocolloidal solutions

    NASA Astrophysics Data System (ADS)

    Sebastian, Indu; Divya, S.; Nampoori, V. P. N.; Radhakrishnan, P.; Thomas, Sheenu

    2013-01-01

    We present the linear and nonlinear optical studies on nanocolloidal solutions of Ga9Ge27Se64 glass with varying concentrations. Optical bandgap of the material is found to vary with respect to the concentration of the solute in the solution. An intermediate peak in the band tail of the absorption spectra is observed due to the presence of energy band in the forbidden gap. The existence of fluorescence emission confirms the above argument. Nonlinear absorption is studied using open aperture Z-scan technique. The mechanism behind nonlinear absorption is predicted as two photon as well as two step photon absorption. Nonlinearity increases with decrease in optical bandgap which in turn depends on the concentration of the nanocolloidal solutions.

  4. Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

    PubMed

    Shklyaev, A A; Latyshev, A V

    2016-12-01

    We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications. PMID:27541814

  5. Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

    SciTech Connect

    Oh, Hoon Jung; Choi, Kyu Jin; Loh, Wei Yip; Htoo, Thwin; Chua, Soo Jin; Cho, Byung Jin

    2007-09-01

    A GaAs defect-free epitaxial layer has been grown on Si via a Ge concentration graded SiGe on insulator (SGOI) for application in high channel-mobility metal-oxide-semiconductor field effect transistor. The SGOI layer, 42 nm thick, serves as the compliant and intermediate buffer to reduce the lattice and thermal expansion mismatches between Si and GaAs. A modified two-step Ge condensation technique achieves the surface Ge concentration in SGOI as high as 71%. It is also found that low-temperature migration enhanced epitaxy during the initial GaAs nucleation on the SGOI surface is critical to obtain a device quality GaAs layer by epitaxial growth.

  6. Infrared Detectors Containing Stacked Si(1-x)Ge(x)/Si Layers

    NASA Technical Reports Server (NTRS)

    Park, Jin S.; Lin, True-Lon; Jones, Eric; Del Castillo, Hector; Gunapala, Sarath

    1996-01-01

    Long-wavelength-infrared detectors containing multiple layers of high-quality crystalline p(+) Si(1-x)Ge(x) alternating with layers of Si undergoing development. Each detector comprises stack of Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) photodetectors. In comparison with older HIP detectors containing single Si(1-x)Ge(x)/Si heterojunctions, developmental detectors feature greater quantum efficiencies and stronger photoresponses.

  7. Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(1 0 0) by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Su, Shaojian; Zhang, Dongliang; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen

    2013-12-01

    Low-temperature molecular beam epitaxy was employed to grow Ge1-xSnx/Ge strained-layer superlattices (SLSs) on Si(1 0 0) substrates with a Ge buffer layer. The Ge1-xSnx and Ge layers in the SLSs were deposited at the same temperature as low as 180 °C. Surface roughening during the growth was investigated by in situ reflection high-energy electron diffraction (RHEED). The periods, compositions, and quality of the SLSs were characterized by high resolution X-ray diffraction (HR-XRD), random and aligned Rutherford backscattering spectra (RBS), transmission electron microscopy (TEM), and scanning TEM. Besides, a Ge1-xSnx/Ge SLS sample was grown directly on Si(1 0 0) for comparison. It’s found that the quality of the Ge1-xSnx/Ge SLSs grown on a Ge buffer was significantly better than that grown directly on Si(1 0 0) substrate.

  8. The nature of intermediate-range order in Ge-As-S glasses : results from reverse Monte Carlo modeling.

    SciTech Connect

    Soyer-Uzun, S.; Benmore, C. J.; Siewenie, J. E.; Sen, S.; X-Ray Science Division; Univ.of California at Davis; LANL

    2010-01-01

    The experimental neutron and x-ray diffraction data for stoichiometric and S-deficient Ge{sub x}As{sub x}S{sub 100-2x} glasses with x = 18.2, 25.0, and 33.3 at.% have been modeled simultaneously using the reverse Monte Carlo (RMC) technique. Nearest-neighbor coordination environments, as obtained in previous x-ray absorption spectroscopy and diffraction experiments, have been employed as short-range order constraints in these simulations. The large scale three-dimensional structural models thus obtained from RMC simulation are used to investigate the nature and compositional evolution of intermediate-range structural order in these ternary glasses. The intermediate-range structural order is controlled by (1) a corner-shared three-dimensional network of AsS{sub 3} pyramids and GeS{sub 4} tetrahedra in the stoichiometric Ge{sub 18.2}As{sub 18.2}S{sub 63.6} glass, (2) a heterogeneous structure that consists of homopolar bonded As-rich regions coexisting with a GeS{sub 2} network in the S-deficient Ge{sub 25}As{sub 25}S{sub 50} glass, and (3) a homogeneous structure resulting from the disruption of the topological continuity of the GeS{sub 2} network and As-rich clusters regions due to the formation of Ge-As bonds in the most S-deficient Ge{sub 33.3}As{sub 33.3}S{sub 33.3} glass. This scenario of the compositional evolution of intermediate-range structural order is consistent with and provides an atomistic explanation of the corresponding evolution in the position, width and intensity of the first sharp diffraction peak and the magnitude of small angle scattering in these glasses.

  9. Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures

    SciTech Connect

    Antonov, A. V.; Drozdov, M. N.; Novikov, A. V. Yurasov, D. V.

    2015-11-15

    The segregation of Sb in Ge epitaxial layers grown by the method of molecular beam epitaxy on Ge (001) substrates is investigated. For a growth temperature range of 180–325°C, the temperature dependence is determined for the segregation ratio of Sb in Ge, which shows a sharp increase (by more than three orders of magnitude) with increasing temperature. The strong dependence of the segregation properties of Sb on the growth temperature makes it possible to adapt a method based on the controlled use of segregation developed previously for the doping of Si structures for the selective doping of Ge structures with a donor impurity. Using this method selectively doped Ge:Sb structures, in which the bulk impurity concentration varies by an order of magnitude at distances of 3–5 nm, are obtained.

  10. Improved interfacial and electrical properties of Ge MOS devices with ZrON/GeON dual passivation layer

    NASA Astrophysics Data System (ADS)

    Wenyu, Yuan; Jingping, Xu; Lu, Liu; Yong, Huang; Zhixiang, Cheng

    2016-05-01

    The interfacial and electrical characteristics of Ge metal–oxide–semiconductor (MOS) devices with a dual passivation layer of ZrON/GeON formed by NH3- or N2-plasma treatment are investigated. The experimental results show that the NH3-plasma treated sample exhibits significantly improved interfacial and electrical properties as compared to the samples with N2-plasma treatment and no treatment: a lower interface-state density at the midgap (1.64 × 1011 cm‑2 · eV‑1) and gate leakage current (9.32 × 10‑5 A/cm2 at Vfb + 1 V), a small capacitance equivalent thickness (1.11 nm) and a high k value (32). X-ray photoelectron spectroscopy is used to analyze the involved mechanisms. It is indicated that more GeON and less GeOx (x < 2) are formed on the Ge surface during NH3-plasma treatment than the N2-plasma treatment, resulting in a high-quality high-k/Ge interface, because H atoms and NH radicals in NH3-plasma can enhance volatilization of the unstable low-k GeOx, creating high-quality GeON passivation layer. Moreover, more nitrogen incorporation in ZrON/GeON induced by NH3-plasma treatment can build a stronger N barrier and thus more effectively inhibit in-diffusion of O and Ti from high-k gate dielectric and out-diffusion of Ge. Project supported by the National Natural Science Foundation of China (Nos. 6127411261176100, 61404055).

  11. Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

    NASA Astrophysics Data System (ADS)

    Lee, Kwang Hong; Bao, Shuyu; Wang, Bing; Wang, Cong; Yoon, Soon Fatt; Michel, Jurgen; Fitzgerald, Eugene A.; Tan, Chuan Seng

    2016-02-01

    High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate with 6° off-cut using a heavily arsenic (As) doped Ge seed layer. The growth steps consists of (i) growth of a heavily As-doped Ge seed layer at low temperature (LT, at 400 °C), (ii) Ge growth with As gradually reduced to zero at high temperature (HT, at 650 °C), (iii) pure Ge growth at HT. This is followed by thermal cyclic annealing in hydrogen at temperature ranging from 600 to 850 °C. Analytical characterization have shown that the Ge epitaxial film with a thickness of ˜1.5 µm experiences thermally induced tensile strain of 0.20% with a treading dislocation density (TDD) of mid 106/cm2 which is one order of magnitude lower than the control group without As doping and surface roughness of 0.37 nm. The reduction in TDD is due to the enhancement in velocity of dislocations in an As-doped Ge film.

  12. Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack

    NASA Astrophysics Data System (ADS)

    Kanematsu, Masayuki; Shibayama, Shigehisa; Sakashita, Mitsuo; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

    2016-08-01

    We investigated the effect of GeO2 deposition temperature (T depo) on electronic properties of Al/Al2O3/GeO2/Ge MOS capacitors. Capacitance–voltage characteristics show frequency dispersions under depletion and strong inversion conditions, which can be attributed from the interface states at the atomic layer deposition (ALD)-GeO2/Ge interface and from the defect states in the quasi-neutral region in the Ge substrate, respectively. We found that the interface state density (D it) shows similar values and energy distributions as T depo decreases to 200 from 300 °C, while a higher D it is observed at a T depo of 150 °C. Also, from the temperature dependence of conductance, the frequency dispersion under the strong inversion condition can be related to the minority carrier diffusion to the quasi-neutral region of the Ge substrate. The frequency dependence of conductance reveals that the undesirable increment of the bulk defect density can be suppressed by decreasing T depo. In this study, the bulk defect density in a MOS capacitor prepared at a T depo of 200 °C decreases one tenth compared with that at a T depo of 300 °C. The ALD of GeO2 at a low temperature of around 200 °C is effective for both obtaining a low D it and preventing the undesirable introduction of bulk defect density.

  13. Antiferromagnetic iridium manganese based intermediate layers for perpendicular magnetic recording media

    NASA Astrophysics Data System (ADS)

    Srinivasan, Kumar; Piramanayagam, S. N.; Sbiaa, Rachid

    2008-08-01

    Current generation CoCrPt oxide based perpendicular magnetic recording media use two Ru-based intermediate layers in order to grow crystallographically textured, and magnetically isolated granular media. In this work, the advantage of replacing the Ru grain isolation layer with antiferromagnetic IrMn is demonstrated. Media samples using 7.5nm thick IrMn intermediate layers show perpendicular texture with dispersion below 4°, coercivity of over 4000Oe alongside magnetic exchange decoupling, average grain sizes of 6nm with distributions under 14%, and thermal stability factor of 88. The IrMn layer may also help to stabilize the recording layer grains against thermal instability effects.

  14. Growth of ultrahigh-Sn-content Ge1- x Sn x epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact

    NASA Astrophysics Data System (ADS)

    Suzuki, Akihiro; Nakatsuka, Osamu; Shibayama, Shigehisa; Sakashita, Mitsuo; Takeuchi, Wakana; Kurosawa, Masashi; Zaima, Shigeaki

    2016-04-01

    We examined the epitaxial growth of an ultrahigh-Sn-content Ge1- x Sn x layer on a Ge substrate and investigated the impact of a Ge1- x Sn x interlayer on the Schottky barrier height (SBH) of the metal/Ge contact. In this study, we considered guidelines of the strain energy and growth temperature to realize a high-Sn-content Ge1- x Sn x layer while keeping the epitaxial growth and suppressing the Sn precipitation. By reducing the film thickness and keeping a low growth temperature, we formed an atomically flat and uniform Ge1- x Sn x epitaxial layer with a Sn content up to 46% on a Ge(001) substrate. We also performed the current density-voltage measurement for Al/Ge1- x Sn x /n-Ge Schottky diodes to estimate the SBH. We found that the SBH of Al/Ge1- x Sn x /n-Ge contact decreases with increasing Sn content in the Ge1- x Sn x interlayer. The shift of the pinning position towards the conduction band edge of Ge is one of the reasons for the SBH reduction of Al/Ge1- x Sn x /n-Ge contact because the valence band edge of Ge1- x Sn x would rise as the Sn content increases.

  15. GeOx interfacial layer scavenging remotely induced by metal electrode in metal/HfO2/GeOx/Ge capacitors

    NASA Astrophysics Data System (ADS)

    Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Lee, Sung Bo; Park, In-Sung; Ahn, Jinho

    2016-07-01

    The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeOx interfacial layer (IL) between HfO2 dielectric and Ge substrate in metal/HfO2/GeOx/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeOx IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeOx IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO2 interface.

  16. THIN-LAYER SEPARATION OF CITRIC ACID CYCLE INTERMEDIATES, LACTIC ACID, AND THE AMINO ACID TAURINE

    EPA Science Inventory

    This paper describes a two-dimensional mixed-layer method for separating citric acid cycle intermediates, lactic acid and the amino acid taurine. The method cleanly separates all citric acid cycle intermediates tested, excepting citric acid and isocitric acid. The solvents are in...

  17. Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure

    NASA Astrophysics Data System (ADS)

    Huang, Zhong-Mei; Huang, Wei-Qi; Liu, Shi-Rong; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke; Qin, Cao-Jian

    2016-04-01

    In our experiment, it was observed that the emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional (1D) structure. The results of experiment and calculation demonstrate that the uniaxial tensile strain in the (111) and (110) direction can efficiently transform Ge to a direct bandgap material with the bandgap energy useful for technological application. It is interested that under the tensile strain from Ge-GeSn layers on 1D structure in which the uniaxial strain could be obtained by curved layer (CL) effect, the two bandgaps EΓg and ELg in the (111) direction become nearly equal at 0.83 eV related to the emission of direct-gap band near 1500 nm in the experiments. It is discovered that the red-shift of the peaks from 1500 nm to 1600 nm occurs with change of the uniaxial tensile strain, which proves that the peaks come from the emission of direct-gap band.

  18. Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure.

    PubMed

    Huang, Zhong-Mei; Huang, Wei-Qi; Liu, Shi-Rong; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke; Qin, Cao-Jian

    2016-01-01

    In our experiment, it was observed that the emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional (1D) structure. The results of experiment and calculation demonstrate that the uniaxial tensile strain in the (111) and (110) direction can efficiently transform Ge to a direct bandgap material with the bandgap energy useful for technological application. It is interested that under the tensile strain from Ge-GeSn layers on 1D structure in which the uniaxial strain could be obtained by curved layer (CL) effect, the two bandgaps EΓg and ELg in the (111) direction become nearly equal at 0.83 eV related to the emission of direct-gap band near 1500 nm in the experiments. It is discovered that the red-shift of the peaks from 1500 nm to 1600 nm occurs with change of the uniaxial tensile strain, which proves that the peaks come from the emission of direct-gap band. PMID:27097990

  19. Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure

    PubMed Central

    Huang, Zhong-Mei; Huang, Wei-Qi; Liu, Shi-Rong; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke; Qin, Cao-Jian

    2016-01-01

    In our experiment, it was observed that the emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional (1D) structure. The results of experiment and calculation demonstrate that the uniaxial tensile strain in the (111) and (110) direction can efficiently transform Ge to a direct bandgap material with the bandgap energy useful for technological application. It is interested that under the tensile strain from Ge-GeSn layers on 1D structure in which the uniaxial strain could be obtained by curved layer (CL) effect, the two bandgaps EΓg and ELg in the (111) direction become nearly equal at 0.83 eV related to the emission of direct-gap band near 1500 nm in the experiments. It is discovered that the red-shift of the peaks from 1500 nm to 1600 nm occurs with change of the uniaxial tensile strain, which proves that the peaks come from the emission of direct-gap band. PMID:27097990

  20. Atomic-layer etching of Ge using an ultraclean ECR plasma

    NASA Astrophysics Data System (ADS)

    Sugiyama, Takayuki; Matsuura, Takashi; Murota, Junichi

    1997-03-01

    Self-limited atomic-layer etching of Ge(100) has been investigated by alternated chlorine adsorption and Ar + ion irradiation using an ultraclean ECR plasma. With short Ar + ion irradiation, about a quarter of atomic-layer thickness was etched in each cycle under the saturated adsorption condition, which corresponds with the case of Si(100). With increasing irradiation amount of Ar + ions, the etch rate per cycle increases and tends to saturate to the atomic-layer thickness of Ge(100). Taking Ar + ion induced reaction into consideration, a simple exponentially-saturating equation well describes the atomic-layer etch rate of Ge. From measured Ar + ion flux density distribution, it is estimated that the energy of Ar + ions predominantly contributing to the atomic-layer etching of Ge is higher than the order of ˜13 eV.

  1. Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates

    NASA Astrophysics Data System (ADS)

    Nakatsuka, Osamu; Tsutsui, Norimasa; Shimura, Yosuke; Takeuchi, Shotaro; Sakai, Akira; Zaima, Shigeaki

    2010-04-01

    We have investigated the behaviors of the carrier mobility and concentration of the undoped Ge1-xSnx layers epitaxially grown on silicon-on-insulator (SOI) substrates. Hall measurement revealed the conduction of holes excited from acceptor levels related to vacancy defects whose concentration was as high as 1018 cm-3 in Ge1-xSnx layers. The temperature dependences of the carrier mobility and concentration in the valence band was estimated by reducing the parallel conduction component in the impurity band. The incorporation of Sn at a content lower than 4.0% hardly degraded the hole mobility of heteroepitaxial Ge1-xSnx layers. In contrast, the mobility of the Ge1-xSnx layers was improved by reducing the carrier concentration of the Ge1-xSnx layers by Sn incorporation compared with that of the Ge layer formed under the same growth and annealing conditions. This result suggests that the incorporation of Sn into Ge leads to reducing the hole concentration of the electrically active vacancy defects due to the formation of Sn-vacancy pairs.

  2. Diffractive intermediate layer enables broadband light trapping for high efficiency ultrathin c-Si tandem cells

    NASA Astrophysics Data System (ADS)

    Li, Guijun; Ho, Jacob Y. L.; Li, He; Kwok, Hoi-Sing

    2014-06-01

    Light management through the intermediate reflector in the tandem cell configuration is of great practical importance for achieving high stable efficiency and also low cost production. So far, however, the intermediate reflectors employed currently are mainly focused on the light absorption enhancement of the top cell. Here, we present a diffractive intermediate layer that allows for light trapping over a broadband wavelength for the ultrathin c-Si tandem solar cell. Compared with the standard intermediate reflector, this nanoscale architectural intermediate layer results in a 35% and 21% remarkable enhancement of the light absorption in the top (400-800 nm) and bottom (800-1100 nm) cells simultaneously, and ultrathin c-Si tandem cells with impressive conversion efficiency of 13.3% are made on the glass substrate.

  3. Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22 nm node pMOSFETs

    NASA Astrophysics Data System (ADS)

    Wang, Guilei; Moeen, M.; Abedin, A.; Xu, Yefeng; Luo, Jun; Guo, Yiluan; Qin, Changliang; Tang, Zhaoyun; Yin, Haizhou; Li, Junfeng; Yan, Jiang; Zhu, Huilong; Zhao, Chao; Chen, Dapeng; Ye, Tianchun; Kolahdouz, M.; Radamson, Henry H.

    2015-12-01

    Pattern dependency of selective epitaxy of Si1-xGex (0.20 ⩽ x ⩽ 0.45) grown in recessed source/drain regions of 22 nm pMOSFETs has been studied. A complete substrate mapping over 200 mm wafers was performed and the transistors' characteristics were measured. The designed SiGe profile included a layer with Ge content of 40% at the bottom of recess (40 nm) and capped with 20% Ge as a sacrificial layer (20 nm) for silicide formation. The induced strain in the channel was simulated before and after silicidation. The variation of strain was localized and its effect on the transistors' performance was determined. The chips had a variety of SiGe profile depending on their distance (closest, intermediate and central) from the edge of the 200 mm wafer. SiGe layers with poor epi-quality were observed when the coverage of exposed Si of the chip was below 1%. This causes high Ge contents with layer thicknesses above the critical thickness.

  4. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2012-07-31

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  5. Dilute group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2015-02-24

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  6. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

    SciTech Connect

    Drozdov, Yu. N. Drozdov, M. N.; Yunin, P. A.; Yurasov, D. V.; Shaleev, M. A.; Novikov, A. V.

    2015-01-15

    It is demonstrated using X-ray diffraction and atomic force microscopy that elastic stresses in GeSi layers on Si (115) substrates relax more effectively than in the same layers on Si (001) substrates. This fact is attributed to the predominant contribution of one of the (111) slip planes on the (115) cut. The atomicforce-microscopy image of the GeSi/Si(115) surface reveals unidirectional slip planes, while the GeSi/Si(001) image contains a grid of orthogonal lines and defects at the points of their intersection. As a result, thick GeSi layers on Si (115) have a reduced surface roughness. A technique for calculating the parameters of relaxation of the layer on the Si (115) substrate using X-ray diffraction data is discussed.

  7. Anomalously elastic intermediate phase in randomly layered superfluids, superconductors, and planar magnets.

    PubMed

    Mohan, Priyanka; Goldbart, Paul M; Narayanan, Rajesh; Toner, John; Vojta, Thomas

    2010-08-20

    We show that layered quenched randomness in planar magnets leads to an unusual intermediate phase between the conventional ferromagnetic low-temperature and paramagnetic high-temperature phases. In this intermediate phase, which is part of the Griffiths region, the spin-wave stiffness perpendicular to the random layers displays anomalous scaling behavior, with a continuously variable anomalous exponent, while the magnetization and the stiffness parallel to the layers both remain finite. Analogous results hold for superfluids and superconductors. We study the two phase transitions into the anomalous elastic phase, and we discuss the universality of these results, and implications of finite sample size as well as possible experiments. PMID:20868107

  8. Magneto-optical properties of Co /Ge(100) with ultrathin Ag buffer layers

    NASA Astrophysics Data System (ADS)

    Su, C. W.; Tsay, J. S.; Hwang, C. H.; Yao, Y. D.

    2005-05-01

    Magnetic properties of Co films (<2nm) with Ag buffer layers (<0.7nm) grown on Ge(100) at room temperature and 200K were studied by surface magneto-optical Kerr effect. Without the buffer, the films reveal in-plane magnetic anisotropy even Co and Ge forms nonmagnetic interfacial alloys. The hysteresis due to intercalation of Ag can be detected at thinner Co thicknesses. The buffer can effectively cutoff the intermixing of Co and Ge. As the thickness of Ag is reduced, out-of-plane magnetic anisotropy due to the interface interactions between Co /Ag and Co /Ge was discovered and was only at 200K.

  9. GSMBE growth and structural characterisation of SiGeC layers for HBT

    NASA Astrophysics Data System (ADS)

    Zhang, J.; Neave, J. H.; Li, X. B.; Fewster, P. F.; El Mubarek, H. A. W.; Ashburn, P.; Mitrovic, I. Z.; Buiu, O.; Hall, S.

    2005-05-01

    Gas source molecular beam epitaxy is used for the growth of SiGeC layers from disilane, germane and methylsilane precursors at low substrate temperatures. A systematic method of carbon concentration determination based on a combination of X-ray diffraction and X-ray reflectivity is examined. The grown layers were annealed using rapid thermal annealing and analysed with X-ray diffraction, X-ray reflectivity and secondary ion mass spectrometry. The recovery of compressive strain in the SiGeC layer is correlated to the loss of carbon through diffusion and indicates that the carbon atoms are incorporated substitutionally in the as-grown layers.

  10. Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

    NASA Astrophysics Data System (ADS)

    Korotchenkov, Oleg; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin-Chi; Li, Pei-Wen; Cantarero, Andres

    2014-03-01

    The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ≈200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.

  11. Versatile buffer layer architectures based on Ge1-xSnx alloys

    NASA Astrophysics Data System (ADS)

    Roucka, R.; Tolle, J.; Cook, C.; Chizmeshya, A. V. G.; Kouvetakis, J.; D'Costa, V.; Menendez, J.; Chen, Zhihao D.; Zollner, S.

    2005-05-01

    We describe methodologies for integration of compound semiconductors with Si via buffer layers and templates based on the GeSn system. These layers exhibit atomically flat surface morphologies, low defect densities, tunable thermal expansion coefficients, and unique ductile properties, which enable them to readily absorb differential stresses produced by mismatched overlayers. They also provide a continuous selection of lattice parameters higher than that of Ge, which allows lattice matching with technologically useful III-V compounds. Using this approach we have demonstrated growth of GaAs, GeSiSn, and pure Ge layers at low temperatures on Si(100). These materials display extremely high-quality structural, morphological, and optical properties opening the possibility of versatile integration schemes directly on silicon.

  12. Relaxation of strain during solid phase epitaxial growth of Ge + ion implanted layers in silicon

    NASA Astrophysics Data System (ADS)

    Holmén, G.; Songsiriritthigul, Prayoon

    1998-09-01

    Formation of Si 1- xGe x-alloy layers by solid phase epitaxial growth (SPEG) of Ge + ion implanted silicon has been studied. The ion implantations were performed with 40, 100, 150, 200 and 300 keV 74Ge + ions and various ion doses. The SPEG of the ion implanted layers was carried out in a conventional furnace at 850°C for 20 min under a flow of nitrogen gas. The Si 1- xGe x-alloy layers were characterised by Rutherford backscattering spectrometry and transmission electron microscopy (TEM). For a given ion energy, a Si 1- xGe x-alloy layer with no observable extended defects can be manufactured if the ion dose is below a critical value and strain-induced defects are formed in the alloy layer when the ion dose is equal to or above this value. The critical Ge + ion dose increases with ion energy, while the critical maximum Ge concentration decreases. For ion energies ⩽150 keV, the defects observed in the alloy layers are mostly stacking faults parallel to the {1 1 1} planes. For higher ion energies, 200 keV and above, the majority of defects in the alloy layer are hairpin dislocations. In the whole ion energy range, the critical ion dose and the depth position of the nucleation site for the stacking faults obtained from the measurements are in good agreement with theoretical predictions. Extended defects are formed in the alloy layer during the SPEG when the regrowth of the crystalline/amorphous interface has reached the depth position in the crystal where the accumulated strain energy density is equal to the critical value of 235 mJ/m 2.

  13. The role of Ag buffer layer in Fe islands growth on Ge (111) surfaces

    SciTech Connect

    Fu, Tsu-Yi Wu, Jia-Yuan; Jhou, Ming-Kuan; Hsu, Hung-Chan

    2015-05-07

    Sub-monolayer iron atoms were deposited at room temperature on Ge (111)-c(2 × 8) substrates with and without Ag buffer layers. The behavior of Fe islands growth was investigated by using scanning tunneling microscope (STM) after different annealing temperatures. STM images show that iron atoms will cause defects and holes on substrates at room temperature. As the annealing temperature rises, iron atoms pull out germanium to form various kinds of alloyed islands. However, the silver layer can protect the Ag/Ge(111)-(√3×√3) reconstruction from forming defects. The phase diagram shows that ring, dot, and triangular defects were only found on Ge (111)-c(2 × 8) substrates. The kinds of islands found in Fe/Ge system are similar to Fe/Ag/Ge system. It indicates that Ge atoms were pulled out to form islands at high annealing temperatures whether there was a Ag layer or not. But a few differences in big pyramidal or strip islands show that the silver layer affects the development of islands by changing the surface symmetry and diffusion coefficient. The structure characters of various islands are also discussed.

  14. Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method

    NASA Astrophysics Data System (ADS)

    Tsukamoto, Takahiro; Hirose, Nobumitsu; Kasamatsu, Akifumi; Mimura, Takashi; Matsui, Toshiaki; Suda, Yoshiyuki

    2013-10-01

    The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 Ω cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.

  15. Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method

    SciTech Connect

    Tsukamoto, Takahiro; Suda, Yoshiyuki; Hirose, Nobumitsu; Kasamatsu, Akifumi; Mimura, Takashi; Matsui, Toshiaki

    2013-10-21

    The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 Ω cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.

  16. Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

    SciTech Connect

    Chu, R. L.; Liu, Y. C.; Lee, W. C.; Huang, M. L.; Kwo, J. E-mail: mhong@phys.ntu.edu.tw; Lin, T. D.; Hong, M. E-mail: mhong@phys.ntu.edu.tw; Pi, T. W.

    2014-05-19

    A high-quality high-κ/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high κ dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5 Å to 1 Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high κ dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-κ/Ge interface using the Ge epi-layer approach.

  17. Ge 1- xC x double-layer antireflection and protection coatings

    NASA Astrophysics Data System (ADS)

    Hu, C. Q.; Zheng, W. T.; Li, J. J.; Jiang, Q.; Tian, H. W.; Lu, X. Y.; Liu, J. W.; Xu, L.; Wang, J. B.

    2006-09-01

    The antireflection Germanium carbide (Ge 1- xC x) coating, deposited using RF reactive sputtering, on both sides of ZnS substrate wafer has been developed. The infrared (IR) transmittance spectra show that the IR transmittance in the wavelength region between 8 and 12 μm for the designed system Ge 1- xC x/ZnS/Ge 1- xC x is greatly enhanced compared to that for ZnS substrate. In addition, the double-layer coated ZnS substrate is approximately four times as hard as uncoated ZnS substrate. This investigation indicates that a double-layer Ge 1- xC x coating can be used as an effective antireflection and protection coating on ZnS infrared window.

  18. Electrochemistry of layered GaSe and GeS: applications to ORR, OER and HER.

    PubMed

    Tan, Shu Min; Chua, Chun Kiang; Sedmidubský, David; Sofer, Zdene Combining Breve K; Pumera, Martin

    2016-01-21

    Though many studies examined the properties of the class of IIIA-VIA and IVA-VIA layered materials, few have delved into the electrochemical aspect of such materials. In light of the burgeoning interest in layered structures towards various electrocatalytic applications, we endeavored to study the inherent electrochemical properties of representative layered materials of this class, GaSe and GeS, and their impact towards electrochemical sensing of redox probes as well as catalysis of oxygen reduction, oxygen evolution and hydrogen evolution reactions. In contrast to the typical sandwich structure of MoS2 layered materials, GeS is isoelectronic to black phosphorus with the same structure; GaSe is a layered material consisting of GaSe sheets bonded in the sequence Se-Ga-Ga-Se. We characterized GaSe and GeS by employing scanning electron microscopy, X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy complemented by electronic structure calculations. It was found that the encompassing surface oxide layers on GaSe and GeS greatly influenced their electrochemical properties, especially their electrocatalytic capabilities towards hydrogen evolution reaction. These findings provide fresh insight into the electrochemical properties of these IIIA-VIA and IVA-VIA layered structures which enables development for future applications. PMID:26675834

  19. Bidimensional intercalation of Ge between SiC(0001) and a heteroepitaxial graphite top layer

    SciTech Connect

    Kubler, L.; Dentel, D.; Bischoff, J.-L.; Derivaz, M.; Aiet-Mansour, K.; Diani, M.

    2005-09-15

    High temperature annealing of 4H- or 6H-SiC(0001) crystals is well known to desorb Si from the surface and to generate a C-rich (6{radical}3x6{radical}3)R30 deg. (6{radical}3) reconstruction explained as a graphite monolayer in heteroepitaxial registry with the substrate. Ge deposition at room temperature and in the monolayer range on this graphitized reconstruction results in Ge islands. Using a number of surface techniques, we follow subsequent Ge morphology evolutions as a function of isochronal post-annealing treatments at increasing temperatures. In a particular temperature window Ge reacts with the substrate by diffusion under the graphite planes and wets the Si-terminated SiC surface. In spite of this bidimensional insertion of a Ge layer, the epitaxial relationship between the SiC substrate and the graphite is maintained as shown by very clear graphite-(1x1) LEED or RHEED patterns. They denote extended and well-ordered graphite planes at the surface of a graphite/Ge/SiC heterostructure. XPS analyses reveal a complete passivation of the intercalated Ge layer against oxidation by the overlying graphite sheets. Moreover, drastic spectroscopic changes on the bulk-SiC Si 2p and C 1s core levels are observed, depending on whether graphite(6{radical}3)/SiC or graphite(1x1)/Ge/SiC terminations are analyzed. In the latter case, the observed core level splitting of the bulk components is interpreted by a significant upward band bending ({approx}1.2 eV) of the n-doped SiC, making this second interface to act as a Schottky barrier. Above 1300 deg. C, a delayed Ge desorption takes place that allows the graphite sheets to re-form in their initial 6{radical}3 form, i.e., without Ge and with flatter bands.

  20. Effect of Diffusion Control Layer on Reverse Al-Induced Layer Exchange Process for High-Quality Ge/Al/Glass Structure

    NASA Astrophysics Data System (ADS)

    Nakazawa, K.; Toko, K.; Suemasu, T.

    2015-05-01

    Fabricating large-grained polycrystalline Ge (poly-Ge) thin films on conducting-layer coated glass is a promising approach to lower the manufacturing cost of high-efficiency III-V tandem solar cells. We investigated the self-organizing formation of poly-Ge/Al/glass structures by using Al-induced layer exchange. The layer exchange between amorphous Ge and Al layers was completed at a low temperature of 350°C. Forming the interlayer between Ge and Al, i.e., limiting the diffusion of Ge to Al lowered the Ge nucleation rate and then enlarged the grain size of the resulting poly-Ge layer. The natively oxidized Al interlayer, formed by exposing a thin Al membrane (2-nm thickness) to air for 180 min, led to the poly-Ge with grains 46 μm in size. Moreover, the Ge layer was highly (111)-oriented. This Ge/Al/glass structure appears promising for use in the bottom cell of the III-V semiconductor based tandem solar cells, as well as in the epitaxial templates for aligned nanowires and other advanced materials.

  1. Porous Ge based Electric Double Layer Capacitors with High Compatibility for Low Threshold Voltage Diode Rectifiers

    NASA Astrophysics Data System (ADS)

    Sekiguchi, A.; Hara, M.; Oguchi, H.; Kuwano, H.

    2014-11-01

    The final goal of this study is to develop all-Ge-based energy harvesting modules consisting of mechanical generators, rectifiers, capacitors and power managing digital circuits. To make basis for the development of modules, we focused on development of the Ge electrodes for electric double layer capacitors (EDLC). Firstly, to establish a method to make high surface area Ge electrodes, we studied surface etching of the Ge(100) substrates in the acid solution. We found that the substrates with higher dopant concentration forms smaller size micro-pores with higher area density that leads to higher surface area. Secondly we studied stability of Ge in the ionic liquid (IL) electrolyte by ac impedance measurements. The impedance plots verified that Ge is reactive in IL electrolyte, thus not appropriate for electrodes without surface modification. Finally we oxidized Ge surface and tested the stability again. The impedance plot of the surface- oxidized Ge showed little reaction, proving that we succeeded to improve the surface stability.

  2. Growth of high quality GaN layer on carbon nanotube-graphene network structure as intermediate layer

    NASA Astrophysics Data System (ADS)

    Seo, Taeo Hoon; Park, Ah Hyun; Park, Sungchan; Kim, Myung Jong; Suh, Eun-Kyung

    2015-03-01

    In general, high-quality GaN layers are synthesized on low-temperature (LT) GaN buffer layer on a single crystal sapphire substrate. However, large differences in fundamental properties such as lattice constants and thermal expansion coefficients between GaN layer and sapphire substrate generate high density of threading dislocation (TD) that leads to deterioration of optical and structural properties. Graphene has been attracting much attention due to its excellent physical properties However, direct epitaxial growth of GaN film onto graphene layer on substrates is not easily accessible due to the lack of chemical reactivity on graphene which consisted of C-C bond of sp2 hexagonally arranged carbon atoms with no dangling bonds. In this work, an intermediate layer for the GaN growth on sapphire substrate was constructed by inserting carbon nanotubes and graphene hybrid structure (CGH) Optical and structural properties of GaN layer grown on CGH were compared with those of GaN layer directly grown on sapphire CNTs act as nucleation sites and play a crucial role in the growth of single crystal high-quality GaN on graphene layer. Also, graphene film acts as a mask for epitaxial lateral overgrowth of GaN layer, which can effectively reduce TD density. A grant from the Korea Institute of Science and Technology (KIST) institutional program.

  3. Characteristic length scale of the intermediate structure in zero-pressure-gradient boundary layer flow

    PubMed Central

    Barenblatt, G. I.; Chorin, A. J.; Prostokishin, V. M.

    2000-01-01

    In a turbulent boundary layer over a smooth flat plate with zero pressure gradient, the intermediate structure between the viscous sublayer and the free stream consists of two layers: one adjacent to the viscous sublayer and one adjacent to the free stream. When the level of turbulence in the free stream is low, the boundary between the two layers is sharp, and both have a self-similar structure described by Reynolds-number-dependent scaling (power) laws. This structure introduces two length scales: one—the wall-region thickness—determined by the sharp boundary between the two intermediate layers and the second determined by the condition that the velocity distribution in the first intermediate layer be the one common to all wall-bounded flows and in particular coincide with the scaling law previously determined for pipe flows. Using recent experimental data, we determine both these length scales and show that they are close. Our results disagree with the classical model of the “wake region.” PMID:10760253

  4. Layered YSZ/SCSZ/YSZ Electrolytes for Intermediate Temperature SOFC Part I: Design and Manufacturing

    SciTech Connect

    Orlovskaya, Nina; Klimov, Mikhail; Huang, Xinyu; Cullen, David A; Graule, Thomas; Kuebler, Jakob

    2012-01-01

    (Sc2O3)0.1(CeO2)0.01(ZrO2)0.89 (SCSZ) ceramic electrolyte has superior ionic conductivity in the intermediate temperature range (700 800 C), but it does not exhibit good phase and chemical stability in comparison with 8 mol% Y2O3 ZrO2 (YSZ). To maintain high ionic conductivity and improve the stability in the whole electrolyte, layered structures with YSZ outer layers and SCSZ inner layers were designed. Because of a mismatch of coefficients of thermal expansion and Young's moduli of SCSZ and YSZ phases, upon cooling of the electrolytes after sintering, thermal residual stresses will arise, leading to a possible strengthening of the layered composite and, therefore, an increase in the reliability of the electrolyte. Laminated electrolytes with three, four, and six layers design were manufactured using tape-casting, lamination, and sintering techniques. After sintering, while the thickness of YSZ outer layers remained constant at 30 m, the thickness of the SCSZ inner layer varied from 30 m for a Y SC Y three-layered electrolyte, 60 m for a Y 2SC Y four-layered electrolyte, and 120 m for a Y 4SC Y six-layered electrolyte. The microstructure, crystal structure, impurities present, and the density of the sintered electrolytes were characterized by scanning and transmission electron microscopy, X-ray and neutron diffraction, secondary ion mass spectroscopy, and water immersion techniques.

  5. Spin polarized surface resonance bands in single layer Bi on Ge(1 1 1).

    PubMed

    Bottegoni, F; Calloni, A; Bussetti, G; Camera, A; Zucchetti, C; Finazzi, M; Duò, L; Ciccacci, F

    2016-05-18

    The spin features of surface resonance bands in single layer Bi on Ge(1 1 1) are studied by means of spin- and angle-resolved photoemission spectroscopy and inverse photoemission spectroscopy. We characterize the occupied and empty surface states of Ge(1 1 1) and show that the deposition of one monolayer of Bi on Ge(1 1 1) leads to the appearance of spin-polarized surface resonance bands. In particular, the C 3v symmetry, which Bi adatoms adopt on Ge(1 1 1), allows for the presence of Rashba-like occupied and unoccupied electronic states around the [Formula: see text] point of the Bi surface Brillouin zone with a giant spin-orbit constant [Formula: see text] eV · Å. PMID:27073190

  6. Spin polarized surface resonance bands in single layer Bi on Ge(1 1 1)

    NASA Astrophysics Data System (ADS)

    Bottegoni, F.; Calloni, A.; Bussetti, G.; Camera, A.; Zucchetti, C.; Finazzi, M.; Duò, L.; Ciccacci, F.

    2016-05-01

    The spin features of surface resonance bands in single layer Bi on Ge(1 1 1) are studied by means of spin- and angle-resolved photoemission spectroscopy and inverse photoemission spectroscopy. We characterize the occupied and empty surface states of Ge(1 1 1) and show that the deposition of one monolayer of Bi on Ge(1 1 1) leads to the appearance of spin-polarized surface resonance bands. In particular, the C 3v symmetry, which Bi adatoms adopt on Ge(1 1 1), allows for the presence of Rashba-like occupied and unoccupied electronic states around the \\overline{\\text{M}} point of the Bi surface Brillouin zone with a giant spin–orbit constant |{α\\text{R}}| =≤ft(1.4+/- 0.1\\right) eV · Å.

  7. Ge wetting layer increases ohmic plasmon losses in Ag film due to segregation.

    PubMed

    Wróbel, Piotr; Stefaniuk, Tomasz; Trzcinski, Marek; Wronkowska, Aleksandra A; Wronkowski, Andrzej; Szoplik, Tomasz

    2015-05-01

    We have investigated the influence of the Ge wetting layer on both ohmic and scattering losses of a surface plasmon-polariton (SPP) wave in Ag film deposited on SiO2 substrate with an e-beam evaporator. Samples were examined by means of atomic force microscopy (AFM), spectroscopic ellipsometry (SE), two-dimensional X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and microscopic four-point probe (M4PP) sheet resistance measurements. Ag films of 100 nm thickness were deposited at 180 and 295 K directly onto the substrates with or without a Ge interlayer. In AFM scans, we confirm the fact that the commonly used Ge adhesion layer smooths the surface of Ag film and therefore reduces scattering losses of the SPP wave on surface roughness. However, our ellipsometric measurements indicate for the first time that segregation of Ge leads to a considerable increase in ohmic losses connected with a boost of the imaginary part of Ag permittivity in the 500-800 nm spectral range. Moreover, the trend develops over time, as confirmed in a series of measurements performed over an interval of three months. XPS analysis confirms the Ge segregation to the Ag free surface and most probably to grain boundaries. M4PP measurements show that the specific resistivity in Ag films evaporated on a Ge interlayer at 295 K is nearly twice as high as in layers deposited directly on a SiO2 substrate. The use of an amorphous Al2O3 overlayer prevents Ge segregation to free surface. PMID:25871505

  8. Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

    NASA Technical Reports Server (NTRS)

    Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.

    1993-01-01

    An ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer super lattices grown by MBE at low temperature (500 C) is presented, and results are compared with x ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. It is shown that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. It was also noted that we do not observe any strain effect on the E(sub 1) critical point.

  9. Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

    NASA Technical Reports Server (NTRS)

    Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.

    1993-01-01

    We present an ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer superlattices grown by MBE at low temperature (500 C), and compare our results with X-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. We show that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. We also note that we do not observe any strain effect on the E1 critical point.

  10. Intermediate range chemical ordering in amorphous and liquid water, Si, and Ge

    SciTech Connect

    Benmore, C.J.; Hart, R.T.; Mei, Q.; Price, D.L.; Yarger, J.; Tulk, C.A.; Klug, D.D.

    2005-10-01

    Neutron and x-ray diffraction data for low, high, and very high density amorphous ice and liquid water, silicon, and germanium have been compared in terms of the first sharp diffraction peak in the structure factor and at the radial distribution function level. The low and high density forms of H{sub 2}O, Si, and Ge are shown to have very similar structures if the contributions from the hydrogen correlations in water are neglected. The very high density amorphous ice form is shown to be structurally analogous to recently reported high pressure liquid forms of Si and Ge, although there are slight differences in the way interstitial atoms or molecules are pushed into the first coordination shell.

  11. GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

    NASA Astrophysics Data System (ADS)

    Tseng, H. H.; Li, H.; Mashanov, V.; Yang, Y. J.; Cheng, H. H.; Chang, G. E.; Soref, R. A.; Sun, G.

    2013-12-01

    We report an investigation of GeSn-based p-i-n photodiodes with an active GeSn layer that is almost fully strained. The results show that (a) the response of the Ge/GeSn/Ge heterojunction photodiodes is stronger than that of the reference Ge-based photodiodes at photon energies above the 0.8 eV direct bandgap of bulk Ge (<1.55 μm), and (b) the optical response extends to lower energy regions (1.55-1.80 μm wavelengths) as characterized by the strained GeSn bandgap. A cusp-like spectral characteristic is observed for samples with high Sn contents, which is attributed to the significant strain-induced energy splitting of heavy and light hole bands. This work represents a step forward in developing GeSn-based infrared photodetectors.

  12. Manifestation of intermediate phase in mechanical properties: Nano-indentation studies on Ge-Te-Si bulk chalcogenide glasses

    NASA Astrophysics Data System (ADS)

    Das, Chandasree; Kiran, M. S. R. N.; Ramamurty, U.; Asokan, S.

    2012-12-01

    Nano-indentation studies have been undertaken on bulk Ge15Te85-xSix glasses (0≤x≤9), to estimate hardness, H and elastic modulus, E. It is found that E and H increase initially with the increase in the atomic percent of Si. Further, a plateau is seen in the composition dependence of E and H in the composition range 2≤x≤6. It is also seen that the addition of up to 2 at% Si increases the density ρ of the glass considerably; however, further additions of Si lead to a near linear reduction in ρ, in the range 2≤x≤6. Beyond x=6, ρ increases again with Si content. The variation of molar volume Vm brings out a more fascinating picture. A plateau is seen in the intermediate phase suggesting that the molecular structure of the glasses is adapting to keep the count of constraints fixed in this particular phase. The observed variations in mechanical properties are associated with the Boolchand's intermediate phase in the present glassy system, in the composition range 2≤x≤6, suggested earlier from calorimetric and electrical switching studies. The present results reveal rather directly the existence of the intermediate phase in elastic and plastic properties of chalcogenide glasses.

  13. A Metal Bump Bonding Method Using Ag Nanoparticles as Intermediate Layer

    NASA Astrophysics Data System (ADS)

    Fu, Weixin; Nimura, Masatsugu; Kasahara, Takashi; Mimatsu, Hayata; Okada, Akiko; Shoji, Shuichi; Ishizuka, Shugo; Mizuno, Jun

    2015-11-01

    The future development of low-temperature and low-pressure bonding technology is necessary for fine-pitch bump application. We propose a bump structure using Ag nanoparticles as an intermediate layer coated on a fine-pitch Cu pillar bump. The intermediate layer is prepared using an efficient and cost-saving squeegee-coating method followed by a 100°C baking process. This bump structure can be easily flattened before the bonding process, and the low-temperature sinterability of the nanoparticles is retained. The bonding experiment was successfully performed at 250°C and 39.8 MPa and the bonding strength was comparable to that achieved via other bonding technology utilizing metal particles or porous material as bump materials.

  14. Electrical properties of magnesium oxide layers with different surface pretreatment on high mobility Ge1-xSnx and Ge MOS capacitors

    NASA Astrophysics Data System (ADS)

    Su, Chen-Yi; Lieten, Ruben; Bakalov, Petar; Tseng, Wei-Jhih; Dillemans, Leander; Menghini, Mariela; Smets, Tomas; Seo, Jin Won; Locquet, Jean-Pierre

    2014-02-01

    Germanium based channels are interesting for high performance CMOS devices because of their high carrier mobility. In this study, the electrical properties of MgO on both GeSn and Ge MOS capacitors have been investigated. The low equivalent oxide thickness (EOT) of 2.1 nm for MgO on GeSn with a Ge cap layer indicates the high potential for MOSFET applications. A surface treatment prior to oxide deposition is found essential to reduce the gate leakage. It is shown that HCl and H2O2 dipping followed by ozone treatment improves the leakage and leads to good capacitance-voltage (C-V) behavior.

  15. A study on intermediate buffer layer of coated Fiber Bragg Grating cryogenic temperature sensors

    NASA Astrophysics Data System (ADS)

    Freitas, R.; Araujo, F.; Araujo, J.; Neumann, H.; Ramalingam, R.

    2015-12-01

    The sensor characteristics of a coated Fiber Bragg grating (FBG) thermal sensor for cryogenic temperatures depends mainly on the coating materials. The sensitivity of the coated FBG can be improved by enhancing the effective thermal strain transfer between the different layers and the bare FBG. The dual coated FBG's has a primary layer and the secondary layer. The primary coating acts as an intermediate buffer between the secondary coating and the bare FBG. The outer secondary coating is normally made of metals with high thermal expansion coefficient. In this work, a detailed study is carried out on chromium and titanium intermediate buffer layers with various coating thicknesses and combinations. To improve the sensitivity, the secondary coating layer was tested with Indium, Lead and Tin. The sensors were then calibrated in a cryogenic temperature calibration facility at Institute of Technical Physics (ITEP), Karlsruhe Institute of Technology. The sensors were subjected to several thermal cycles between 4.2 and 80 K to study the sensor performance and its thermal characteristics. The sensor exhibits a Bragg wavelength shift of 13pm at 20K. The commercially available detection equipment with a resolution of 1pm can result in a temperature resolution of 0.076 K at 20K.

  16. Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures.

    PubMed

    Lotnyk, Andriy; Ross, Ulrich; Bernütz, Sabine; Thelander, Erik; Rauschenbach, Bernd

    2016-01-01

    Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importance from a fundamental point of view and for data storage applications. In this view, a detailed knowledge of the atomic structure in such alloys is central to understanding the functional properties both in the more commonly utilized amorphous-crystalline transition and in recently proposed interfacial phase change memory based on the transition between two crystalline structures. Aberration-corrected scanning transmission electron microscopy allows direct imaging of local arrangement in the crystalline lattice with atomic resolution. However, due to the non-trivial influence of thermal diffuse scattering on the high-angle scattering signal, a detailed examination of the image contrast requires comparison with theoretical image simulations. This work reveals the local atomic structure of trigonal Ge-Sb-Te thin films by using a combination of direct imaging of the atomic columns and theoretical image simulation approaches. The results show that the thin films are prone to the formation of stacking disorder with individual building blocks of the Ge2Sb2Te5, Ge1Sb2Te4 and Ge3Sb2Te6 crystal structures intercalated within randomly oriented grains. The comparison with image simulations based on various theoretical models reveals intermixed cation layers with pronounced local lattice distortions, exceeding those reported in literature. PMID:27220411

  17. Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures

    PubMed Central

    Lotnyk, Andriy; Ross, Ulrich; Bernütz, Sabine; Thelander, Erik; Rauschenbach, Bernd

    2016-01-01

    Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importance from a fundamental point of view and for data storage applications. In this view, a detailed knowledge of the atomic structure in such alloys is central to understanding the functional properties both in the more commonly utilized amorphous–crystalline transition and in recently proposed interfacial phase change memory based on the transition between two crystalline structures. Aberration-corrected scanning transmission electron microscopy allows direct imaging of local arrangement in the crystalline lattice with atomic resolution. However, due to the non-trivial influence of thermal diffuse scattering on the high-angle scattering signal, a detailed examination of the image contrast requires comparison with theoretical image simulations. This work reveals the local atomic structure of trigonal Ge-Sb-Te thin films by using a combination of direct imaging of the atomic columns and theoretical image simulation approaches. The results show that the thin films are prone to the formation of stacking disorder with individual building blocks of the Ge2Sb2Te5, Ge1Sb2Te4 and Ge3Sb2Te6 crystal structures intercalated within randomly oriented grains. The comparison with image simulations based on various theoretical models reveals intermixed cation layers with pronounced local lattice distortions, exceeding those reported in literature. PMID:27220411

  18. Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures

    NASA Astrophysics Data System (ADS)

    Lotnyk, Andriy; Ross, Ulrich; Bernütz, Sabine; Thelander, Erik; Rauschenbach, Bernd

    2016-05-01

    Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importance from a fundamental point of view and for data storage applications. In this view, a detailed knowledge of the atomic structure in such alloys is central to understanding the functional properties both in the more commonly utilized amorphous–crystalline transition and in recently proposed interfacial phase change memory based on the transition between two crystalline structures. Aberration-corrected scanning transmission electron microscopy allows direct imaging of local arrangement in the crystalline lattice with atomic resolution. However, due to the non-trivial influence of thermal diffuse scattering on the high-angle scattering signal, a detailed examination of the image contrast requires comparison with theoretical image simulations. This work reveals the local atomic structure of trigonal Ge-Sb-Te thin films by using a combination of direct imaging of the atomic columns and theoretical image simulation approaches. The results show that the thin films are prone to the formation of stacking disorder with individual building blocks of the Ge2Sb2Te5, Ge1Sb2Te4 and Ge3Sb2Te6 crystal structures intercalated within randomly oriented grains. The comparison with image simulations based on various theoretical models reveals intermixed cation layers with pronounced local lattice distortions, exceeding those reported in literature.

  19. Strain analysis in ultrathin SiGe-on-insulator layers formed from strained Si-on-insulator substrates by Ge-condensation process

    NASA Astrophysics Data System (ADS)

    Tezuka, Tsutomu; Hirashita, Norio; Moriyama, Yoshihiko; Nakaharai, Shu; Sugiyama, Naoharu; Takagi, Shin-ichi

    2007-04-01

    Ultrathin strained SiGe-on-insulator (sSGOI) layers were fabricated by Ge condensation, in which Si1-xGex layers on strained Si-on-insulator (sSOI) substrates were oxidized, and their strain and defects were investigated. With increasing the Ge fraction x, the compressive strain in the SGOI layers was found to linearly increase up to ˜2%. The linear strain dependence on x was offset by the preexisting tensile strain in the sSOI substrate compared to that of conventional SGOI layers formed on unstrained SOI substrates. As a result, pseudomorphic sSGOI layers were obtained on the sSOI substrate up to higher x (˜0.75) than on a SOI substrate.

  20. Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

    NASA Astrophysics Data System (ADS)

    Kim, Hyoungsub; Chui, Chi On; Saraswat, Krishna C.; McIntyre, Paul C.

    2003-09-01

    High-k dielectric deposition processes for gate dielectric preparation on Si surfaces usually result in the unavoidable and uncontrolled formation of a thin interfacial oxide layer. Atomic layer deposition of ˜55-Å ZrO2 film on a Ge (100) substrate using ZrCl4 and H2O at 300 °C was found to produce local epitaxial growth [(001) Ge//(001) ZrO2 and [100] Ge//[100] ZrO2] without a distinct interfacial layer, unlike the situation observed when ZrO2 is deposited using the same method on Si. Relatively large lattice mismatch (˜10%) between ZrO2 and Ge produced a high areal density of interfacial misfit dislocations. Large hysteresis (>200 mV) and high frequency dispersion were observed in capacitance-voltage measurements due to the high density of interface states. However, a low leakage current density, comparable to values obtained on Si substrates, was observed with the same capacitance density regardless of the high defect density.

  1. Unconventional Superconductivity in the Layered Iron Germanide YFe_{2}Ge_{2}.

    PubMed

    Chen, Jiasheng; Semeniuk, Konstantin; Feng, Zhuo; Reiss, Pascal; Brown, Philip; Zou, Yang; Logg, Peter W; Lampronti, Giulio I; Grosche, F Malte

    2016-03-25

    The iron-based intermetallic YFe_{2}Ge_{2} stands out among transition metal compounds for its high Sommerfeld coefficient of the order of 100  mJ/(mol K^{2}), which signals strong electronic correlations. A new generation of high quality samples of YFe_{2}Ge_{2} show superconducting transition anomalies below 1.8 K in thermodynamic, magnetic, and transport measurements, establishing that superconductivity is intrinsic in this layered iron compound outside the known superconducting iron pnictide or chalcogenide families. The Fermi surface geometry of YFe_{2}Ge_{2} resembles that of KFe_{2}As_{2} in the high pressure collapsed tetragonal phase, in which superconductivity at temperatures as high as 10 K has recently been reported, suggesting an underlying connection between the two systems. PMID:27058094

  2. Uniaxial strain relaxation in He{sup +} ion implanted (110) oriented SiGe layers

    SciTech Connect

    Minamisawa, R. A.; Buca, D.; Trinkaus, H.; Hollaender, B.; Mantl, S.; Destefanis, V.; Hartmann, J. M.

    2009-07-20

    Uniaxially strained (011)Si is attractive for high performance p-channel metal oxide semiconductor field effect transistor devices due to the predicted high hole mobilities. Here, we demonstrate the realization of purely uniaxially relaxed (011) SiGe virtual substrates by He{sup +} ion implantation and thermal annealing. Perfect uniaxial relaxation is evidenced by precise ion channeling angular yield scan measurements and plan view transmission electron microscopy as predicted theoretically on the basis of the layer symmetry dependent dislocation dynamics. Strikingly, misfit dislocations propagate exclusively along the [011] direction in the (011) oriented crystal and, in contrast to (100)Si, no crosshatch is formed. We describe dislocation formation and propagation inducing strain relaxation of (011)SiGe and enlighten the differences to (100) oriented SiGe on Si.

  3. Improved conductivity of indium-tin-oxide film through the introduction of intermediate layer

    NASA Astrophysics Data System (ADS)

    Ng, S. W.; Yam, F. K.; Beh, K. P.; Tneh, S. S.; Hassan, Z.

    2016-09-01

    A thin intermediate layer (Ag, AuSn, In, Ni, Sn, SiO2) was individually deposited on glass substrates prior to the deposition of indium-tin-oxide (ITO) thin film by radio-frequency (RF) magnetron sputtering employing ITO target (composition ratio of In2O3:SnO2 = 9:1). The structural, optical and electrical properties were investigated to compare the ITO thin film with and without an intermediate layer. The preferential orientation of all ITO films was along (222) plane. Although all thin films were polycrystalline, the presence of intermediate layer promoted the overall crystallinity. The sheet resistance and resistivity of the ITO film were reduced from ∼68 Ω/□ to ∼29-45 Ω/□, and 16.2 × 10-4 Ω cm up to 7.58 × 10-4 Ω cm, respectively, by inserting a thin metal layer underneath the ITO film, and it is dependent on the degree of crystallization. The optical transmittance in the visible region varies from 40 to 88% for different samples. Based on the evaluation from Tauc plot, the optical band gap falls in the range of 4.02-4.12 eV. Physical film thickness was compared with that evaluated by optical measurement in the visible range and the physical thickness was found to be smaller. Similarly, the carrier concentration/scattering time from Hall effect measurement were also compared with that from optical measurement in the infrared region. Haacke's figure of merit (FOM) was employed to assess the quality of the ITO films, and the highest FOM is credited to ITO/In up to ∼8 × 10-3 Ω-1 in the visible light region.

  4. Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si.

    PubMed

    Salvalaglio, Marco; Bergamaschini, Roberto; Isa, Fabio; Scaccabarozzi, Andrea; Isella, Giovanni; Backofen, Rainer; Voigt, Axel; Montalenti, Francesco; Capellini, Giovanni; Schroeder, Thomas; von Känel, Hans; Miglio, Leo

    2015-09-01

    The move from dimensional to functional scaling in microelectronics has led to renewed interest toward integration of Ge on Si. In this work, simulation-driven experiments leading to high-quality suspended Ge films on Si pillars are reported. Starting from an array of micrometric Ge crystals, the film is obtained by exploiting their temperature-driven coalescence across nanometric gaps. The merging process is simulated by means of a suitable surface-diffusion model within a phase-field approach. The successful comparison between experimental and simulated data demonstrates that the morphological evolution is driven purely by the lowering of surface-curvature gradients. This allows for fine control over the final morphology to be attained. At fixed annealing time and temperature, perfectly merged films are obtained from Ge crystals grown at low temperature (450 °C), whereas some void regions still persist for crystals grown at higher temperature (500 °C) due to their different initial morphology. The latter condition, however, looks very promising for possible applications. Indeed, scanning tunneling electron microscopy and high-resolution transmission electron microscopy analyses show that, at least during the first stages of merging, the developing film is free from threading dislocations. The present findings, thus, introduce a promising path to integrate Ge layers on Si with a low dislocation density. PMID:26252761

  5. FePtC magnetic recording media with (200) textured MoC intermediate layer

    SciTech Connect

    Tsai, Jai-Lin Tseng, Yun-Ting; Li, Chia-Ru; Fu, Sheng-Chun

    2015-05-07

    The FePt films with thickness of 4–10 nm were deposited on MoC/CrRu/glass at 425 °C by using magnetron sputtering. The Mo{sub 40}C{sub 60} target was used to form the MoC and C two phases after deposition. The MoC intermediate layer was epitaxially grown on the (200) textured CrRu seed layer at 425 °C and the MoC (200) diffraction peak was not clearly indexed below 10 nm but observed at 25 nm. Finally, the FePt film was prepared on (200) textured MoC at 425 °C and shown the strong (001) texture. Perpendicular anisotropy of 1.7 × 10{sup 7} erg/cm{sup 3} and out-of-plane coercivity of 7.5 kOe has been demonstrated in 10 nm thick FePt film. From microstructure, the FePt grains were distributed in- or between-islands like structure and further separated by excess carbon from MoC intermediate layer. Thinner FePt film was more separated by excess carbon and shown higher coercivity.

  6. Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Linder, K. K.; Zhang, F. C.; Rieh, J.-S.; Bhattacharya, P.

    1997-05-01

    Several types of buffer layer structures, including superlattice and step-graded layers, have been employed to reduce the threading dislocation in SiGe epitaxial layers. A new technique, using a 0.1 μm thick Si buffer grown at 450°C by molecular beam epitaxy, provides the best results. For a 0.5 μm thick Si 0.85Ge 0.15 layer, the dislocation density is ⩽ 10 5cm -2. Hall measurements indicate an improvement in the hole mobility of a 1 μm thick Boron doped Si 0.7Ge 0.3 layer. A {SiGe}/{Si} heterojunction bipolar transistor has been fabricated exploiting the low temperature Si buffer. Transmission electron microscopy of the structure does not indicate any evidence of threading dislocations.

  7. Spectroscopic ellipsometric characterization of Si/Si(1-x)Ge(x) strained-layer superlattices

    NASA Technical Reports Server (NTRS)

    Yao, H.; Woollam, J. A.; Wang, P. J.; Tejwani, M. J.; Alterovitz, S. A.

    1993-01-01

    Spectroscopic ellipsometry (SE) was employed to characterize Si/Si(1-x)Ge(x) strained-layer superlattices. An algorithm was developed, using the available optical constants measured at a number of fixed x values of Ge composition, to compute the dielectric function spectrum of Si(1-x)Ge(x) at an arbitrary x value in the spectral range 17 to 5.6 eV. The ellipsometrically determined superlattice thicknesses and alloy compositional fractions were in excellent agreement with results from high-resolution x ray diffraction studies. The silicon surfaces of the superlattices were subjected to a 9:1 HF cleaning prior to the SE measurements. The HF solution removed silicon oxides on the semiconductor surface, and terminated the Si surface with hydrogen-silicon bonds, which were monitored over a period of several weeks, after the HF cleaning, by SE measurements. An equivalent dielectric layer model was established to describe the hydrogen-terminated Si surface layer. The passivated Si surface remained unchanged for greater than 2 h, and very little surface oxidation took place even over 3 to 4 days.

  8. High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors

    NASA Astrophysics Data System (ADS)

    Barreteau, C.; Michon, B.; Besnard, C.; Giannini, E.

    2016-06-01

    Silicon and Germanium monopnictides SiP, SiAs, GeP and GeAs form a family of 2D layered semiconductors. We have succeeded in growing bulk single crystals of these compounds by melt-growth under high pressure (0.5-1 GPa) in a cubic anvil hot press. Large (mm-size), shiny, micaceous crystals of GeP, GeAs and SiAs were obtained, and could be exfoliated into 2D flakes. Small and brittle crystals of SiP were yielded by this method. High-pressure sintered polycrystalline SiP and GeAs have also been successfully used as a precursor in the Chemical Vapor Transport growth of these crystals in the presence of I2 as a transport agent. All compounds are found to crystallize in the expected layered structure and do not undergo any structural transition at low temperature, as shown by Raman spectroscopy down to T=5 K. All materials exhibit a semiconducting behavior. The electrical resistivity of GeP, GeAs and SiAs is found to depend on temperature following a 2D-Variable Range Hopping conduction mechanism. The availability of bulk crystals of these compounds opens new perspectives in the field of 2D semiconducting materials for device applications.

  9. Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix.

    PubMed

    Buljan, M; Radić, N; Sancho-Paramon, J; Janicki, V; Grenzer, J; Bogdanović-Radović, I; Siketić, Z; Ivanda, M; Utrobičić, A; Hübner, R; Weidauer, R; Valeš, V; Endres, J; Car, T; Jerčinović, M; Roško, J; Bernstorff, S; Holy, V

    2015-02-13

    We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells. PMID:25605224

  10. Strain relaxation in Si - xGe x layers on Si(001)

    NASA Astrophysics Data System (ADS)

    Capano, M. A.; Hart, L.; Bowen, D. K.; Gordon-Smith, D.; Thomas, C. R.; Gibbings, C. J.; Halliwell, M. A. G.; Hobbs, L. W.

    1992-02-01

    The lattice relaxation of strained Si 1- xGe x layers on Si (001) substrates has been examined. Three specimens consisting of a single Si 1- xGe x layer were grown by molecular beam epitaxy. All layers were grown with a nominal composition of x = 0.14 to thicknesses of 0.5, 1.0 or 1.5 μm. Double-crystal and white-radiation topographic methods were used to reveal the misfit dislocation structure and distribution. The misfit dislocations were shown to extend from heterogeneous nucleation sites along the <110> directions in the plane of the interface. A symmetric distribution of dislocations between the orthogonal <110> directions was observed. The Burgers vectors of the misfit dislocation array were evenly distributed amongst the available 60°-type candidates. Double-crystal X-ray diffractometry showed the 0.5 and 1.0 μm layers to be fully strained to within the experimental uncertainty. Secondary branching of misfit dislocations was observed in the 1.0μm layer which indicated cross-slip of the threading dislocation segments.

  11. In-situ observations of intermediate layers in the night time ionosphere

    NASA Astrophysics Data System (ADS)

    Gregory, J.; Swenson, C. M.; Humphries, S.; Fish, C.; Carlson, C.; Barjatya, A.

    2005-12-01

    Night time ionospheric electron density profiles have been obtained using impedance and Langmuir probe techniques showing the presence of intermediate layers. Four sounding rockets were launched in July of 2003 at Wallops Island, VA and two more were launched in August of 2004 from Kwajalein atoll, Marshall Islands. Although these rocket campaigns were conducted at different latitudes they both indicated a patchy spatial structure. All six flights used essentially the same plasma impedance probe but the later campaign included a sweeping Langmuir probe. More emphasis is given to the data from the later campaign, "Scattering Layer in the Bottomside Equatorial F-region Ionosphere" investigation, which was a part of the NASA EQUIS II campaign. Electron density from this data set is analyzed using Balmain's theory for a short antenna in a cold magnetoplasma and compared with data from the sweeping Langmuir probe.

  12. Stress reduction in epitaxial GaN films on Si using cubic SiC as intermediate layers

    NASA Astrophysics Data System (ADS)

    Komiyama, Jun; Abe, Yoshihisa; Suzuki, Shunichi; Nakanishi, Hideo

    2006-08-01

    Stress in the epitaxial films of GaN on Si is reduced by using SiC as intermediate layers. The crystalline films of cubic SiC (0-1μm), thin AlN (50nm), and GaN (1-3μm) were prepared on 3in. (1 1 1) Si substrates—stacked in the order of GaN /AlN/SiC/Si—by metalorganic vapor-phase epitaxy. It is revealed by Raman spectroscopy that the tensile stress in GaN is reduced to half (reduction of about 300MPa) for GaN on Si with SiC intermediate layers compared with GaN on Si without SiC intermediate layers. Because of stress reduction, crack-free GaN on Si with a thickness of 2μm was obtained by using SiC intermediate layers. Cracking was minimized even on thicker GaN on Si (3μm thick) with SiC intermediate layers. The SiC intermediate layers are promising for the realization of nitride based electronic devices on Si.

  13. Discharger Using Cascaded Switched Capacitor Converters and Selectable Intermediate Taps for Electric Double-Layer Capacitors

    NASA Astrophysics Data System (ADS)

    Uno, Masatoshi; Tanaka, Koji

    Electric double-layer capacitors (EDLCs) offer several advantages over traditional batteries, such as long cycle life, high power capability, good low-temperature performance, etc. However, their major drawbacks, such as low specific energy and large voltage variation due to charge/discharge cycling, necessitate the use of high-efficiency power conversion electronics that can be used to efficiently discharge EDLCs and thus completely utilize the precious stored energy. In this study, we propose a novel discharger for EDLCs; this discharger uses cascaded switched capacitor converters (SCCs) and selectable intermediate taps. Although the voltage conversion ratio of SCCs is fixed, the load voltage can be maintained within a desired voltage range by the selectable intermediate taps. The circuit configuration, operating principle, and procedure for designing SCCs and selectable intermediate taps are presented. Experimental tests were performed using an EDLC module and a 200W prototype of the discharger. The obtained results showed that the 60V EDLC could be discharged to 30V with an average efficiency of 96% when the load voltage was maintained within the range 30-40V.

  14. Atomic-layer surface reaction of chlorine on Si and Ge assisted by an ultraclean ECR plasma

    NASA Astrophysics Data System (ADS)

    Matsuura, T.; Sugiyama, T.; Murota, J.

    1998-05-01

    Atomic-layer surface adsorption and reaction of chlorine on Si(100) and Ge(100) as well as Si 0.5Ge 0.5(100) assisted by low-energy Ar + ion irradiation were investigated using an ultraclean ECR plasma system with surface analysis by XPS and FTIR/RAS. Hydrogen termination on Si and Ge prepared by HF-treatment or annealing in H 2 was removed by Ar + ion irradiation, and that on Ge was removed, while not on Si, only by the chlorine molecular supply. By repeating alternate chlorine molecular supply (≳0.02 Pa·s) and Ar + ion irradiation (˜4×10 15 cm -2), atomic-layer etching of Si, Ge, and Si 0.5Ge 0.5 was observed with a saturated etch rate per cycle of 1/4 atomic-layer thickness. When Ar + ion irradiation was increased further under a condition of saturated chlorine molecular adsorption, the etch rate per cycle tended to increase with Ar + ion irradiation up to a saturation value of the single atomic-layer thickness. The Ge atoms indicated a higher reactivity than the Si atoms in the atomic-layer etching.

  15. Low-frequency conductance fluctuations in Si:P and Ge:P δ-layers

    NASA Astrophysics Data System (ADS)

    Shamim, Saquib; Mahapatra, Suddhasatta; Scappucci, Giordano; Klesse, W. M.; Simmons, Michelle Y.; Ghosh, Arindam

    Delta doped Si:P and Ge:P devices offer a formidable platform for application towards quantum computation. The fabrication of single donor devices by STM-lithography takes us forward to address the solid state quantum bits. The atomic scale control however makes the devices extremely sensitive to fluctuations and disorder which affect their long term stability. Hence, a study of low frequency 1/f noise for these devices is desirable. We measure 1/f noise in Si:P and Ge:P δ-layers of varying doping density. Fluctuations in conductivity arise due to fluctuations in mobility and the Hooge parameter scales inversely with mobility as 1 /μ3 for all devices. For highly doped Ge:P δ-layer, the noise magnitude in a perpendicular magnetic field (B⊥) reduces by factors of two at the phase breaking breaking field and the Zeeman field indicating universal conductance fluctuations (UCF). The phase breaking length lϕUCF extracted by fitting the B⊥ dependence of noise to the crossover function matches well with lϕWL extracted from weak localization (WL) fits to magnetoconductivity indicating that both UCF and WL are governed by same scattering rates. Present Address: QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands.

  16. Buffer effects of Ag layers on magneto-optical Co/Ge(1 0 0) ultrathin films

    NASA Astrophysics Data System (ADS)

    Su, C. W.; Tsay, J. S.; Yao, Y. D.

    2006-09-01

    Magnetic properties of the Co/Ag/Ge(1 0 0) films grown at room temperature and 200 K were studied by the surface magneto-optical Kerr effect (SMOKE). More than 1.5 monolayer Ag buffer layers not only effectively block the interdiffusion between the capped Co layers and the Ge(1 0 0) substrate but also stabilize the magnetic phase. The temperature and thickness dependence on coercivity measurements show that interactions upon the interfaces are strongly correlated to the microstructures.

  17. LETTER TO THE EDITOR: Breakdown of intermediate-range order in liquid GeSe2 at high temperatures

    NASA Astrophysics Data System (ADS)

    Massobrio, C.; van Roon, F. H. M.; Pasquarello, Alfredo; DeLeeuw, S. W.

    2000-11-01

    The structure of liquid GeSe2 at T = 1373 K has been investigated by first-principles molecular dynamics. The calculated total neutron structure factor is in good agreement with recent experimental data. We found that the disappearance with increasing temperature of the first sharp diffraction peak (FSDP) in the total neutron structure factor is due to an increase of short-range chemical disorder. At T = 1373 K various bonding configurations coexist in close amounts, such as the Ge-GeSe3, Ge-GeSe2 and Se-SeGe2 motifs. This contrasts with the behaviour of liquid GeSe2 at T = 1050 K, for which more than half of the Ge atoms are four-fold coordinated to Se atoms in regular GeSe4 tetrahedra. Our result correlates the appearance of the FSPD in disordered AX2 network-forming materials to the predominant presence of AX4 subunits.

  18. Low-temperature studies of magnetic phases of the interfacial layers for Co/Ge(100) and Co/Ge(111) films

    NASA Astrophysics Data System (ADS)

    Tsay, J. S.; Su, C. W.; Hwang, C. H.; Yao, Y. D.

    2005-07-01

    Magnetic phases of the interfacial layers were comparatively investigated for Co/Ge(100) and Co/Ge(111) films thinner than 13 ML using surface magneto-optic Kerr effect technique. Co/Ge(100) films are nonferromagnetic up to 12 ML as deposited and measured at 300 K. A transition from nonferromagnetism to ferromagnetism occurs upon cryogenic treatments. Systematic investigations of the magnetic properties for Co/Ge(100) reveal a magnetic phase diagram. The boundary between nonferromagnetic and ferromagnetic phases was experimentally determined to be from below 150 K to above 300 K as the cobalt thickness increases from 9 to 13 ML. This behavior is consistent with the thickness-dependent scaling law of the Curie temperature for a thin film system. Because of the difference of the densities of surface atoms, the different thickness of the formed interfacial compounds could explain the shift of the phase boundary to higher Co thickness side as compared to the Co/Ge(111) system. In addition, the critical exponent β in the power law relationship of magnetization for Co/Ge(100) films lies close to the value expected by the three-dimensional Heisenberg model, while the critical exponent of Co/Ge(111) is close to the value of the two-dimensional XY model. The different behaviors of the magnetic transition are attributed to the different interfacial structures.

  19. Hydrogen gettering and strain-induced platelet nucleation in tensilely strained Si0.4Ge0.6/Ge for layer exfoliation applications

    NASA Astrophysics Data System (ADS)

    Pitera, Arthur J.; Fitzgerald, E. A.

    2005-05-01

    We show that tensilely strained epitaxial layers getter interstitially dissolved hydrogen and accelerate the nucleation of platelets. Both of these result in subsurface crack propagation leading to surface blistering and eventual exfoliation of a H+-implanted semiconductor surface. In this work, a strained Si0.4Ge0.6 layer was used to enhance the exfoliation kinetics of relaxed Ge/Si1-xGex/Si virtual substrates by gettering hydrogen and providing a preferential nucleation site for platelets. Using platelet morphology and strain relaxation data, a nucleation and growth model was formulated accounting for both chemical and strain energy contributions to the free energy of platelet formation, revealing two kinetically limited growth regimes for platelets in tensilely strained Si0.4Ge0.6 films. Low-temperature (<200°C) annealing nucleates 1011-cm-2 platelets which grow in the strain-limited regime with minimal loss of hydrogen to surface effusion. At 250 °C, platelet growth is diffusion limited, requiring transport of H2 molecules to the strained layer. Subsequent annealing of strained Si0.4Ge0.6/Ge gettering structures at a temperature exceeding 300 °C results in significantly improved surface blistering kinetics over samples which do not contain a gettering layer. Incorporation of tensilely strained layers has the potential of reducing the implantation dose and annealing temperature necessary for layer transfer. Combined with virtual substrate bonding, they provide a promising solution for economical integration of high-performance semiconductors with silicon.

  20. Impact of the H 2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si

    NASA Astrophysics Data System (ADS)

    Hartmann, J. M.; Abbadie, A.; Barnes, J. P.; Fédéli, J. M.; Billon, T.; Vivien, L.

    2010-02-01

    Using a low temperature/high temperature strategy, we have grown thin (0.27 μm) and thick (2.45 μm) Ge layers on Si(0 0 1) substrates that we have submitted to various constant temperature (750 °C) or cyclic (750 °C/890 °C) H 2 anneals, the objective being to identify those yielding the smoothest surfaces, the lowest threading dislocations densities (TDDs) and the highest near infra-red optical absorptions. The best trade-off for thin layers was 750 °C, 60 min H 2 anneals. Using longer duration 750 °C anneals and especially 750 °C/890 °C cyclic anneals indeed yielded rougher surfaces and vastly degraded optical absorption (deleterious formation of GeSi alloys). By contrast, short 750 °C/890 °C thermal cyclings yielded the best metrics in thick Ge layers (while being at the same time the best in terms of throughput): root mean square surface roughness around 0.8 nm, TDD around 10 7 cm -2, slightly tensily-strained layers (which a plus for optical absorption as the absorption edge is shifted to higher wavelengths), a limited penetration of Si into Ge (and thus absorption coefficients at 1.3 and 1.55 μm almost equal to those of as-grown layers), etc. We have also described the low temperature (450 °C/525 °C) process that we have developed to passivate Ge surfaces thanks to SiH 4 prior to gate stack deposition. Si layer thickness should be below 20 Å in order to have conformal deposition. A transition of the growth front to 3 dimensions has indeed been evidenced for 20 Å and higher.

  1. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  2. Adjustment of residual stress and intermediate layer to BDD/porous Ti composite membrane

    NASA Astrophysics Data System (ADS)

    Tian, Cheng-lu; Li, Xiao-wei; Chang, Ming

    2013-05-01

    Diamond films are deposited on porous Ti substrates by hot filament chemical vapor deposition (HFCVD) method. For adjusting the residual stress of substrate and the titanium carbide (TiC) intermediate layer, the substrates are under annealing process firstly, then are put into alkaline solution with electricity oxidation, and finally composite membranes are obtained by HFCVD, which are characterized by X-ray diffraction (XRD), metalloscope and scanning electron microscope (SEM). Results show that the composite membranes deposited on unannealed substrates are cracked obviously in both sides and broken off easily. After annealing process, the membranes are no longer cracked easily, because the tensile stress distributed in substrates is significantly relieved. After passivation process, TiC generated between diamond film and substrate is less than that without passivation process.

  3. Two-layer stratified flows over pronounced obstacles at low-to-intermediate Froude numbers

    NASA Astrophysics Data System (ADS)

    Cabeza, Cecilia; Varela, Juan; Bove, Italo; Freire, Daniel; Martí, Arturo C.; Sarasúa, L. G.; Usera, Gabriel; Montagne, Raul; Araujo, Moacyr

    2009-04-01

    Two-layer stratified flows over abrupt topographic obstacles, simulating relevant situations in oceanographic problems, are investigated numerically and experimentally in a simplified two-dimensional situation. Experimental results and numerical simulations are presented at low-to-intermediate Froude numbers for two different obstacles: one semicylindrical and the other prismatic. In both cases, four different flow regimes downstream of the obstacles are found: (I) subcritical flow, (II) internal hydraulic jump, (III) Kelvin-Helmholtz instability at the interface, and (IV) shedding of billows. The critical values of the Froude number for the transition between different regimes depend strongly on the shape of the obstacle. In regime (III), we show that the characteristics of the lee wave that appears past the obstacle can be explained with a theoretical stability analysis. Almost independence of the vortex shedding frequency with upstream velocity is observed and explained.

  4. Inversion layer on the Ge(001) surface from the four-probe conductance measurements

    SciTech Connect

    Wojtaszek, Mateusz; Lis, Jakub Zuzak, Rafal; Such, Bartosz; Szymonski, Marek

    2014-07-28

    We report four-probe conductance measurements with sub-micron resolution on atomically clean Ge(001) surfaces. A qualitative difference between n-type and p-type crystals is observed. The scaling behavior of the resistance on n-type samples indicates two-dimensional current flow, while for the p-type crystal a three-dimensional description is appropriate. We interpret this in terms of the formation of an inversion layer at the surface. This result points to the surface states, i.e., dangling bonds, as the driving force behind band bending in germanium. It also explains the intrinsic character of band bending in germanium.

  5. Enhanced Sensitivity of Anti-Symmetrically Structured Surface Plasmon Resonance Sensors with Zinc Oxide Intermediate Layers

    PubMed Central

    Tu, Yi-Chen; Huang, Teng-Yi; Chiu, Nan-Fu

    2014-01-01

    We report a novel design wherein high-refractive-index zinc oxide (ZnO) intermediary layers are used in anti-symmetrically structured surface plasmon resonance (SPR) devices to enhance signal quality and improve the full width at half maximum (FWHM) of the SPR reflectivity curve. The surface plasmon (SP) modes of the ZnO intermediary layer were excited by irradiating both sides of the Au film, thus inducing a high electric field at the Au/ZnO interface. We demonstrated that an improvement in the ZnO (002) crystal orientation led to a decrease in the FWHM of the SPR reflectivity curves. We optimized the design of ZnO thin films using different parameters and performed analytical comparisons of the ZnO with conventional chromium (Cr) and indium tin oxide (ITO) intermediary layers. The present study is based on application of the Fresnel equation, which provides an explanation and verification for the observed narrow SPR reflectivity curve and optical transmittance spectra exhibited by (ZnO/Au), (Cr/Au), and (ITO/Au) devices. On exposure to ethanol, the anti-symmetrically structured showed a huge electric field at the Au/ZnO interface and a 2-fold decrease in the FWHM value and a 1.3-fold larger shift in angle interrogation and a 4.5-fold high-sensitivity shift in intensity interrogation. The anti-symmetrically structured of ZnO intermediate layers exhibited a wider linearity range and much higher sensitivity. It also exhibited a good linear relationship between the incident angle and ethanol concentration in the tested range. Thus, we demonstrated a novel and simple method for fabricating high-sensitivity, high-resolution SPR biosensors that provide high accuracy and precision over relevant ranges of analyte measurement. PMID:24361929

  6. Enhanced sensitivity of anti-symmetrically structured surface plasmon resonance sensors with zinc oxide intermediate layers.

    PubMed

    Chiu, Nan-Fu; Tu, Yi-Chen; Huang, Teng-Yi

    2013-01-01

    We report a novel design wherein high-refractive-index zinc oxide (ZnO) intermediary layers are used in anti-symmetrically structured surface plasmon resonance (SPR) devices to enhance signal quality and improve the full width at half maximum (FWHM) of the SPR reflectivity curve. The surface plasmon (SP) modes of the ZnO intermediary layer were excited by irradiating both sides of the Au film, thus inducing a high electric field at the Au/ZnO interface. We demonstrated that an improvement in the ZnO (002) crystal orientation led to a decrease in the FWHM of the SPR reflectivity curves. We optimized the design of ZnO thin films using different parameters and performed analytical comparisons of the ZnO with conventional chromium (Cr) and indium tin oxide (ITO) intermediary layers. The present study is based on application of the Fresnel equation, which provides an explanation and verification for the observed narrow SPR reflectivity curve and optical transmittance spectra exhibited by (ZnO/Au), (Cr/Au), and (ITO/Au) devices. On exposure to ethanol, the anti-symmetrically structured showed a huge electric field at the Au/ZnO interface and a 2-fold decrease in the FWHM value and a 1.3-fold larger shift in angle interrogation and a 4.5-fold high-sensitivity shift in intensity interrogation. The anti-symmetrically structured of ZnO intermediate layers exhibited a wider linearity range and much higher sensitivity. It also exhibited a good linear relationship between the incident angle and ethanol concentration in the tested range. Thus, we demonstrated a novel and simple method for fabricating high-sensitivity, high-resolution SPR biosensors that provide high accuracy and precision over relevant ranges of analyte measurement. PMID:24361929

  7. Polydopamine as an intermediate layer for silver and hydroxyapatite immobilisation on metallic biomaterials surface.

    PubMed

    Saidin, Syafiqah; Chevallier, Pascale; Abdul Kadir, Mohammed Rafiq; Hermawan, Hendra; Mantovani, Diego

    2013-12-01

    Hydroxyapatite (HA) coated implant is more susceptible to bacterial infection as the micro-structure surface which is beneficial for osseointegration, could also become a reservoir for bacterial colonisation. The aim of this study was to introduce the antibacterial effect of silver (Ag) to the biomineralised HA by utilising a polydopamine film as an intermediate layer for Ag and HA immobilisation. Sufficient catechol groups in polydopamine were required to bind chemically stainless steel 316 L, Ag and HA elements. Different amounts of Ag nanoparticles were metallised on the polydopamine grafted stainless steel by varying the immersion time in silver nitrate solution from 12 to 24 h. Another polydopamine layer was then formed on the metallised film, followed by surface biomineralisation in 1.5 Simulated Body Fluid (SBF) solution for 3 days. Several characterisation techniques including X-Ray Photoelectron Spectroscopy, Atomic Force Microscopy, Scanning Electron Microscopy and Contact Angle showed that Ag nanoparticles and HA agglomerations were successfully immobilised on the polydopamine film through an element reduction process. The Ag metallisation at 24 h has killed the viable bacteria with 97.88% of bactericidal ratio. The Ag was ionised up to 7 days which is crucial to prevent bacterial infection during the first stage of implant restoration. The aged functionalised films were considered stable due to less alteration of its chemical composition, surface roughness and wettability properties. The ability of the functionalised film to coat complex and micro scale metal make it suitable for dental and orthopaedic implants application. PMID:24094179

  8. Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer

    NASA Astrophysics Data System (ADS)

    Kurosawa, Masashi; Taoka, Noriyuki; Sakashita, Mitsuo; Nakatsuka, Osamu; Miyao, Masanobu; Zaima, Shigeaki

    2013-09-01

    Effects of surface oxide layers on liquid-Sn-driven GeSn crystallization on insulators at various temperatures (<475 °C) are investigated. An amorphous Ge in neighborhood of patterned-Sn (<3.5 μm) becomes to polycrystalline Ge1-xSnx (x ≈ 0.025 - 0.14) after annealing at 150-475 °C, which is independent of the surface oxide thickness. Interestingly, a 50-μm-length lateral growth of polycrystalline Ge0.99Sn0.01 layers achieved by combination of thickening of the surface-oxide treated by NH4OH and annealing above melting temperature of Sn (231.9 °C). The growth length is 15 times longer than without the treatment. The advanced process promises to achieve group-IV-based optic and electronic devices on flexible substrates and Si platforms.

  9. Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

    NASA Astrophysics Data System (ADS)

    Linder, K. K.; Zhang, F. C.; Rieh, J.-S.; Bhattacharya, P.; Houghton, D.

    1997-06-01

    The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ˜104cm-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.

  10. Two-layered dissolving microneedles formulated with intermediate-acting insulin.

    PubMed

    Ito, Yukako; Hirono, Muneyuki; Fukushima, Keizo; Sugioka, Nobuyuki; Takada, Kanji

    2012-10-15

    Two-layered dissolving microneedles (DMs) containing intermediate-acting insulin, protamine sulfate insulin (PSI), were prepared. Then a pharmacodynamic study was performed to evaluate the prolonged hypoglycemic effects in rats. The DMs were approximately 497±5 μm long, with 303±3 μm diameter at their base. The length of the insulin loaded space was 182±4 μm. PSI contents in DMs were 0.51±0.02 IU. A three-month stability study showed that 99.9±1.4% of PSI was recovered at 4 °C. As the temperature increased to 40 °C, recovery decreased to 97.5±2.0%. PSI was released within 5 min from DMs. Hypoglycemic effects of PSI DMs were evaluated in rats where subcutaneous injection preparations were used as references. Total area above the plasma glucose level (% of the pre-dose level) vs. time curve as an index of hypoglycemic effect was 144.0±16.0% h and 243.3±8.5% h for PSI DMs at 1.46 and 3.28 IU/kg. The relative pharmacologic availability of PSI from DMs were 100.2±9.8% and 91.4±4.1%. No significant difference of hypoglycemic curves was found between DMs and injection solutions, which suggests the usefulness of two-layered DMs of PSI for the displacement therapy of sc injection preparation. PMID:22750407

  11. Interface induce growth of intermediate layer for bandgap engineering insights into photoelectrochemical water splitting.

    PubMed

    Zhang, Jian; Zhang, Qiaoxia; Wang, Lianhui; Li, Xing'ao; Huang, Wei

    2016-01-01

    A model of interface induction for interlayer growing is proposed for bandgap engineering insights into photocatalysis. In the interface of CdS/ZnS core/shell nanorods, a lamellar solid solution intermediate with uniform thickness and high crystallinity was formed under interface induction process. Merged the novel charge carrier transfer layer, the photocurrent of the core/shell/shell nanorod (css-NR) array was significantly improved to 14.0 mA cm(-2) at 0.0 V vs. SCE, nearly 8 times higher than that of the perfect CdS counterpart and incident photon to electron conversion efficiency (IPCE) values above 50% under AM 1.5G irradiation. In addition, this array photoelectrode showed excellent photocatalytic stability over 6000 s. These results suggest that the CdS/Zn1-xCdxS/ZnS css-NR array photoelectrode provides a scalable charge carrier transfer channel, as well as durability, and therefore is promising to be a large-area nanostructured CdS-based photoanodes in photoelectrochemical (PEC) water splitting system. PMID:27250648

  12. Growth of monolithic full-color GaN-based LED with intermediate carrier blocking layers

    NASA Astrophysics Data System (ADS)

    El-Ghoroury, Hussein S.; Yeh, Milton; Chen, J. C.; Li, X.; Chuang, Chih-Li

    2016-07-01

    Specially designed intermediate carrier blocking layers (ICBLs) in multi-active regions of III-nitride LEDs were shown to be effective in controlling the carrier injection distribution across the active regions. In principle, the majority of carriers, both holes and electrons, can be guided into targeted quantum wells and recombine to generate light of specific wavelengths at controlled current-densities. Accordingly we proposed and demonstrated a novel monolithic InGaN-based LED to achieve three primary colors of light from one device at selected current densities. This LED structure, which has three different sets of quantum wells separated with ICBLs for three primary red-green-blue (RGB) colors, was grown by metal-organic chemical vapor deposition (MOCVD). Results show that this LED can emit light ranging from 460 to 650 nm to cover the entire visible spectrum. The emission wavelength starts at 650 nm and then decreases to 460 nm or lower as the injection current increases. In addition to three primary colors, many other colors can be obtained by color mixing techniques. To the best of our knowledge, this is the first demonstration of monolithic full-color LED grown by a simple growth technique without using re-growth process.

  13. Interface induce growth of intermediate layer for bandgap engineering insights into photoelectrochemical water splitting

    PubMed Central

    Zhang, Jian; Zhang, Qiaoxia; Wang, Lianhui; Li, Xing’ao; Huang, Wei

    2016-01-01

    A model of interface induction for interlayer growing is proposed for bandgap engineering insights into photocatalysis. In the interface of CdS/ZnS core/shell nanorods, a lamellar solid solution intermediate with uniform thickness and high crystallinity was formed under interface induction process. Merged the novel charge carrier transfer layer, the photocurrent of the core/shell/shell nanorod (css-NR) array was significantly improved to 14.0 mA cm−2 at 0.0 V vs. SCE, nearly 8 times higher than that of the perfect CdS counterpart and incident photon to electron conversion efficiency (IPCE) values above 50% under AM 1.5G irradiation. In addition, this array photoelectrode showed excellent photocatalytic stability over 6000 s. These results suggest that the CdS/Zn1−xCdxS/ZnS css-NR array photoelectrode provides a scalable charge carrier transfer channel, as well as durability, and therefore is promising to be a large-area nanostructured CdS-based photoanodes in photoelectrochemical (PEC) water splitting system. PMID:27250648

  14. Interface induce growth of intermediate layer for bandgap engineering insights into photoelectrochemical water splitting

    NASA Astrophysics Data System (ADS)

    Zhang, Jian; Zhang, Qiaoxia; Wang, Lianhui; Li, Xing’Ao; Huang, Wei

    2016-06-01

    A model of interface induction for interlayer growing is proposed for bandgap engineering insights into photocatalysis. In the interface of CdS/ZnS core/shell nanorods, a lamellar solid solution intermediate with uniform thickness and high crystallinity was formed under interface induction process. Merged the novel charge carrier transfer layer, the photocurrent of the core/shell/shell nanorod (css-NR) array was significantly improved to 14.0 mA cm‑2 at 0.0 V vs. SCE, nearly 8 times higher than that of the perfect CdS counterpart and incident photon to electron conversion efficiency (IPCE) values above 50% under AM 1.5G irradiation. In addition, this array photoelectrode showed excellent photocatalytic stability over 6000 s. These results suggest that the CdS/Zn1‑xCdxS/ZnS css-NR array photoelectrode provides a scalable charge carrier transfer channel, as well as durability, and therefore is promising to be a large-area nanostructured CdS-based photoanodes in photoelectrochemical (PEC) water splitting system.

  15. Critical stresses for Si/sub x/Ge/sub 1-//sub x/ strained-layer plasticity

    SciTech Connect

    Tsao, J.Y.; Dodson, B.W.; Picraux, S.T.; Cornelison, D.M.

    1987-11-23

    We have measured the temperature-dependent onset of strain relief in metastable Si/sub x/Ge/sub 1-//sub x/ strained layers grown on Ge substrates. On the basis of these measurements, and physical arguments, we propose that strained-layer breakdown is most directly determined not by thickness and lattice mismatch, but rather by (1) an ''excess'' stress (the difference between that due to misfit strain and that due to dislocation line tension) and (2) temperature. With use of these parameters, observed regimes of stability and metastability are shown to be described within a simple, unified framework.

  16. Growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on various types of substrates

    NASA Astrophysics Data System (ADS)

    Takeuchi, Shotaro; Sakai, Akira; Yamamoto, Koji; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki

    2007-01-01

    We have performed growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on Si(0 0 1), virtual Ge(0 0 1) and bulk Ge(0 0 1) substrates. In the case of Si(0 0 1), amorphous Ge1-xSnx phases are partially formed as well as many threading dislocations in Ge0.98Sn0.02 layers. Employing virtual Ge substrates to reduce the lattice mismatch at the interface leads to epitaxial Ge0.978Sn0.022 layers with a flat surface. Most of threading dislocations in the Ge0.978Sn0.022 layer comes from pre-existing ones in the virtual Ge substrate and propagates laterally, leaving misfit segments at the Ge0.978Sn0.022/virtual Ge interface, after post-deposition annealing (PDA). This simultaneously results in the reduction of threading dislocation density and the promotion of strain relaxation. In the case of bulk Ge(0 0 1), although low threading dislocation density can be achieved, less than 106 cm-2, the film exhibits surface undulation and a lesser degree of strain relaxation even after PDA.

  17. Three dimensional finite element modeling and characterization of intermediate states in single active layer phase change memory devices

    NASA Astrophysics Data System (ADS)

    Cinar, I.; Aslan, O. B.; Gokce, A.; Dincer, O.; Karakas, V.; Stipe, B.; Katine, J. A.; Aktas, G.; Ozatay, O.

    2015-06-01

    The high contrast in the electrical resistivity between amorphous and crystalline states of a phase change material can potentially enable multiple memory levels for efficient use of a data storage medium. We report on our investigation of the role of the current injection site geometry (circular and square) in stabilizing such intermediate states within a nanoscale single-phase change material system (Ge2Sb2Te5). We have developed a three dimensional multiphysics model, which includes phase change kinetics, electrical, thermal, thermoelectric, and percolation effects, all as a function of temperature, using an iterative approach with coupled differential equations. Our model suggests that the physical origin of the formation of stable intermediate states in square top contact devices is mainly due to anisotropic heating during the application of a programming current pulse. Furthermore, the threshold current requirement and the width of the programming window are determined by crystallite nucleation and growth rates such that a higher crystallization rate leads to a narrower range of current pulses for switching to intermediate resistance level(s). The experimentally determined resistance maps, those that are indicative of the crystallinity, show good agreement with the simulated phase change behavior confirming the existence of stable intermediate states. Our model successfully predicts the required programming conditions for such mixed-phase levels, which can be used to optimize memory cells for future ultra-high density data storage applications.

  18. Intermediate valence to heavy fermion through a quantum phase transition in Yb3(Rh1-xTx)4Ge13 (T = Co, Ir) single crystals

    NASA Astrophysics Data System (ADS)

    Rai, Binod; Morosan, Emilia

    Single crystals of Yb3(Rh1-x Tx)4Ge13 (T = Co, Ir) have been grown using the self-flux method. Powder X-ray diffraction data on these compounds are consistent with the cubic structure with space group Pm 3 n . Intermediate valence behavior is observed in Yb3(Rh1-x Tx)4Ge13 upon T = Co doping, while T = Ir doping drives the system into a heavy fermion state. Antiferromagnetic order is observed in the Ir-doped samples Yb3(Rh1-x Tx)4Ge13 for 0.5 < x <= 1 with TN = 0.96 K for Yb3Ir4Ge13. With decreasing x, the magnetic order is suppressed towards a quantum critical point around xc = 0.5, accompanied by non-Fermi liquid behavior evidenced by logarithmic divergence of the specific heat and linear temperature dependence of the resistivity. The Fermi liquid behavior is recovered with the application of large magnetic fields. Gordon and Betty Moore Foundation EPiQS initiative through Grant GBMF4417 and Welch Foundation.

  19. Differential Gene Expression of the Intermediate and Outer Interzone Layers of Developing Articular Cartilage in Murine Embryos

    PubMed Central

    IJpma, Arne; Cleary, Mairead; Heijsman, Daphne; Narcisi, Roberto; van der Spek, Peter J.; Kremer, Andreas; van Weeren, René; Brama, Pieter; van Osch, Gerjo J.V.M.

    2014-01-01

    Nascent embryonic joints, interzones, contain a distinct cohort of progenitor cells responsible for the formation of the majority of articular tissues. However, to date the interzone has largely been studied using in situ analysis for candidate genes in the context of the embryo rather than using an unbiased genome-wide expression analysis on isolated interzone cells, leaving significant controversy regarding the exact role of the intermediate and outer interzone layers in joint formation. Therefore, in this study, using laser capture microdissection (three biological replicates), we selectively harvested the intermediate and outer interzones of mouse embryos at gestational age 15.5 days, just prior to cavitation, when the differences between the layers should be most profound. Microarray analysis (Agilent Whole Mouse Genome Oligo Microarrays) was performed and the differential gene expression between the intermediate interzone cells and outer interzone cells was examined by performing a two-sided paired Student's t-test and pathway analysis. One hundred ninety-seven genes were differentially expressed (≥2-fold) between the intermediate interzone and the outer interzone with a P-value≤0.01. Of these, 91 genes showed higher expression levels in the intermediate interzone and 106 were expressed higher in the outer interzone. Pathway analysis of differentially expressed genes suggests an important role for inflammatory processes in the interzone layers, especially in the intermediate interzone, and hence in joint and articular cartilage development. The high representation of genes relevant to chondrocyte hypertrophy and endochondral ossification in the outer interzone suggests that it undergoes endochondral ossification. PMID:24738827

  20. Differential gene expression of the intermediate and outer interzone layers of developing articular cartilage in murine embryos.

    PubMed

    Jenner, Florien; IJpma, Arne; Cleary, Mairead; Heijsman, Daphne; Narcisi, Roberto; van der Spek, Peter J; Kremer, Andreas; van Weeren, René; Brama, Pieter; van Osch, Gerjo J V M

    2014-08-15

    Nascent embryonic joints, interzones, contain a distinct cohort of progenitor cells responsible for the formation of the majority of articular tissues. However, to date the interzone has largely been studied using in situ analysis for candidate genes in the context of the embryo rather than using an unbiased genome-wide expression analysis on isolated interzone cells, leaving significant controversy regarding the exact role of the intermediate and outer interzone layers in joint formation. Therefore, in this study, using laser capture microdissection (three biological replicates), we selectively harvested the intermediate and outer interzones of mouse embryos at gestational age 15.5 days, just prior to cavitation, when the differences between the layers should be most profound. Microarray analysis (Agilent Whole Mouse Genome Oligo Microarrays) was performed and the differential gene expression between the intermediate interzone cells and outer interzone cells was examined by performing a two-sided paired Student's t-test and pathway analysis. One hundred ninety-seven genes were differentially expressed (≥ 2-fold) between the intermediate interzone and the outer interzone with a P-value ≤ 0.01. Of these, 91 genes showed higher expression levels in the intermediate interzone and 106 were expressed higher in the outer interzone. Pathway analysis of differentially expressed genes suggests an important role for inflammatory processes in the interzone layers, especially in the intermediate interzone, and hence in joint and articular cartilage development. The high representation of genes relevant to chondrocyte hypertrophy and endochondral ossification in the outer interzone suggests that it undergoes endochondral ossification. PMID:24738827

  1. Behavior and mixing of a cold intermediate layer near a sloping boundary

    NASA Astrophysics Data System (ADS)

    Cyr, Frédéric; Bourgault, Daniel; Galbraith, Peter S.

    2015-03-01

    As in many other subarctic basins, a cold intermediate layer (CIL) is found during ice-free months in the Lower St. Lawrence Estuary (LSLE), Canada. This study examines the behavior of the CIL above the sloping bottom using a high-resolution mooring deployed on the northern side of the estuary. Observations show successive swashes/backwashes of the CIL on the slope at a semi-diurnal frequency. It is shown that these upslope and downslope motions are likely caused by internal tides generated at the nearby channel head sill. Quantification of mixing from 322 turbulence casts reveals that in the bottom 10 m of the water column, the time-average dissipation rate of turbulent kinetic energy is 𝜖 10 m = 1.6×10-7Wkg-1, an order of magnitude greater than found in the interior of the basin, far from boundaries. Near-bottom dissipation during the flood phase of the M2 tide cycle (upslope flow) is about four times greater than during the ebb phase (downslope flow). Bottom shear stress, shear instabilities, and internal wave scattering are considered as potential boundary mixing mechanisms near the seabed. In the interior of the water column, far from the bottom, increasing dissipation rates are observed with both increasing stratification and shear, which suggests some control of the dissipation by the internal wave field. However, poor fits with a parametrization for large-scale wave-wave interactions suggests that the mixing is partly driven by more complex non-linear and/or smaller scale waves.

  2. Intermediate Progenitor Cohorts Differentially Generate Cortical Layers and Require Tbr2 for Timely Acquisition of Neuronal Subtype Identity.

    PubMed

    Mihalas, Anca B; Elsen, Gina E; Bedogni, Francesco; Daza, Ray A M; Ramos-Laguna, Kevyn A; Arnold, Sebastian J; Hevner, Robert F

    2016-06-28

    Intermediate progenitors (IPs) amplify the production of pyramidal neurons, but their role in selective genesis of cortical layers or neuronal subtypes remains unclear. Using genetic lineage tracing in mice, we find that IPs destined to produce upper cortical layers first appear early in corticogenesis, by embryonic day 11.5. During later corticogenesis, IP laminar fates are progressively limited to upper layers. We examined the role of Tbr2, an IP-specific transcription factor, in laminar fate regulation using Tbr2 conditional mutant mice. Upon Tbr2 inactivation, fewer neurons were produced by immediate differentiation and laminar fates were shifted upward. Genesis of subventricular mitoses was, however, not reduced in the context of a Tbr2-null cortex. Instead, neuronal and laminar differentiation were disrupted and delayed. Our findings indicate that upper-layer genesis depends on IPs from many stages of corticogenesis and that Tbr2 regulates the tempo of laminar fate implementation for all cortical layers. PMID:27320921

  3. The structure and photoconductivity of SiGe/Si epitaxial layers modified by single-pulse laser radiation

    NASA Astrophysics Data System (ADS)

    Ivlev, G. D.; Kazuchits, N. M.; Prakopyeu, S. L.; Rusetsky, M. S.; Gaiduk, P. I.

    2014-12-01

    The effect of nanosecond pulses of ruby laser radiation on the structural state and morphology of the epitaxial layers of a SiO0.5Ge0.5 solid solution on silicon with the initiation of a crystal-melt phase transition has been studied by electron microscopy. Data on the photoelectric parameters of the laser-modified layers having a cellular structure owing to the segregation of germanium during the solidification of the binary melt have been derived.

  4. Impact of using high-density polyethylene geomembrane layer as landfill intermediate cover on landfill gas extraction.

    PubMed

    Chen, Zezhi; Gong, Huijuan; Zhang, Mengqun; Wu, Weili; Liu, Yu; Feng, Jin

    2011-05-01

    Clay is widely used as a traditional cover material for landfills. As clay becomes increasingly costly and scarce, and it also reduces the storage capacity of landfills, alternative materials with low hydraulic conductivity are employed. In developing countries such as China, landfill gas (LFG) is usually extracted for utilization during filling stage, therefore, the intermediate covering system is an important part in a landfill. In this study, a field test of LFG extraction was implemented under the condition of using high-density polyethylene (HDPE) geomembrane layer as the only intermediate cover on the landfill. Results showed that after welding the HDPE geomembranes together to form a whole airtight layer upon a larger area of landfill, the gas flow in the general pipe increased 25% comparing with the design that the HDPE geomembranes were not welded together, which means that the gas extraction ability improved. However as the heat isolation capacity of the HDPE geomembrane layer is low, the gas generation ability of a shallow landfill is likely to be weakened in cold weather. Although using HDPE geomembrane layer as intermediate cover is acceptable in practice, the management and maintenance of it needs to be investigated in order to guarantee its effective operation for a long term. PMID:21232931

  5. Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1-xSnx layer on Ge(0 0 1) substrate

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Li, Lingzi; Zhou, Qian; Pan, Jisheng; Zhang, Zheng; Tok, Eng Soon; Yeo, Yee-Chia

    2014-12-01

    Annealing of strained Ge1-xSnx epitaxial layers grown on Ge(0 0 1) substrate results in two distinctive regimes marked by changes in composition and morphology. Annealing at low temperatures (200-300 °C or Regime-I) leads to surface enrichment of Sn due to Sn segregation, as indicated by X-ray photoelectron spectroscopy (XPS) results, while the bulk Sn composition (from X-ray diffraction (XRD)) and the surface morphology (from atomic force microscopy (AFM)) do not show discernible changes as compared to the as-grown sample. Annealing at temperatures ranging from 300 °C to 500 °C (Regime-II) leads to a decrease in the surface Sn composition. While the Ge1-xSnx layer remains fully strained, a reduction in the bulk Sn composition is observed when the annealing temperature reaches 500 °C. At this stage, surface roughening also occurs with formation of 3D islands. The island size increases as the annealing temperature is raised to 600 °C. The decrease in the Sn composition at the surface and in the bulk in Regime-II is attributed to additional thermally activated kinetic processes associated with Sn desorption and formation of Sn-rich 3D islands on the surface.

  6. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Germanium implantation

    NASA Astrophysics Data System (ADS)

    Guo, Hui; Wang, Yue-Hu; Zhang, Yu-Ming; Qiao, Da-Yong; Zhang, Yi-Men

    2009-10-01

    By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P+ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρc as low as 4.23 × 10-5 Ωcm2 is achieved after annealing in N2 at 800 °C for 3 min, which is much lower than that (> 900 °C) in the typical SiC metallisation process. The sheet resistance Rsh of the implanted layers is 1.5 kΩ/□. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge+ ion implantations.

  7. Metal-HfO{sub 2}-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO{sub 2} layer

    SciTech Connect

    Park, In-Sung; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho; Lee, Sung Bo

    2015-01-15

    The charge trapping properties of metal-HfO{sub 2}-Ge capacitor as a nonvolatile memory have been investigated with (NH{sub 4}){sub 2}S-treated Ge substrate and atomic-layer-deposited HfO{sub 2} layer. The interfacial layer generated by (NH{sub 4}){sub 2}S-treated Ge substrate reveals a trace of -S- bonding, very sharp interface edges, and smooth surface morphology. The Ru-HfO{sub 2}-Ge capacitor with (NH{sub 4}){sub 2}S-treated Ge substrate shows an enhanced interface state with little frequency dispersion, a lower leakage current, and very reliable properties with the enhanced endurance and retention than Ru-HfO{sub 2}-Ge capacitor with cyclic-cleaned Ge substrate.

  8. Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer

    SciTech Connect

    Pantzas, Konstantinos; Patriarche, Gilles; Talneau, Anne; Youssef, Jamal Ben

    2014-10-06

    Direct bonding of yttrium iron garnet (YIG) on silicon without the use of an intermediate bonding layer is demonstrated and characterized using scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy. During the bonding experiment, the garnet is reduced in the presence of oxide-free silicon. As a result, a 5 nm thick SiO{sub 2}/amorphous-YIG bilayer is formed and welds the garnet to silicon.

  9. Study of the intermediate layer at the n{sup +}-CdS/p-CdTe interface

    SciTech Connect

    Muzafarova, S. A. Aitbaev, B. U.; Mirsagatov, Sh. A.; Durshimbetov, K.; Zhanabergenov, Zh.

    2008-12-15

    The effect of production conditions and subsequent stimulation by ultrasonic irradiation on the formation of a solid solution at the n-CdS/p-CdTe interface in solar cells has been investigated. The phase composition of the solid-solution transient layer was investigated by a nondestructive photoelectric method (measurement of the spectral distribution of photosensitivity in the gate and photodiode modes). It is shown that the phase composition and thickness of the intermediate CdTe{sub 1-x}S{sub x} layer depend strongly on the heterostructure formation conditions.

  10. Threading dislocation reduction in a GaN film with a buffer layer grown at an intermediate temperature

    NASA Astrophysics Data System (ADS)

    Cho, Youngji; Chang, Jiho; Ha, Joonseok; Lee, Hyun-jae; Fujii, Katsushi; Yao, Takafumi; Lee, Woong; Sekiguchi, Takashi; Yang, Jun-Mo; Yoo, Jungho

    2015-01-01

    Remarkable reduction of the threading dislocation (TD) density has been achieved by inserting a GaN layer grown at an intermediate temperature (900 °C) (IT-GaN layer), just prior to the growth of GaN at 1040 °C by using a hydride vapor phase epitaxy. The variation in the dislocation density variation along the growth direction was observed by using cathodoluminescence (CL) and transmission electron microscopy (TEM). A cross-sectional CL image revealed that the reduction of the TD density happened during the growth of IT-GaN layer. The TEM measurement provided the proof that the TD reduction could be ascribed to the masking of the TD by stacking faults in the IT-GaN layer.

  11. Three-dimensional nanostructures on Ge/Si(100) wetting layers: Hillocks and pre-quantum dots

    NASA Astrophysics Data System (ADS)

    Ramalingam, Gopalakrishnan; Floro, Jerrold A.; Reinke, Petra

    2016-05-01

    The annealing of sub-critical Ge wetting layers (WL < 3.5 ML) initiates the formation of 3D nanostructures, whose shape and orientation is determined by the WL thickness and thus directly related to the strain energy. The emergence of these nanostructures, hillocks and pre-quantum dots, is studied by scanning tunneling microscopy. A wetting layer deposited at 350 °C is initially rough on the nanometer length-scale and undergoes a progressive transformation and smoothening during annealing at T < 460 °C when vacancy lines and the 2xn reconstruction are observed. The metastable Ge WL then collapses to form 3D nanostructures whose morphology is controlled by the WL thickness: first, the hillocks, with a wedding cake-type structure where the step edges run parallel to the ⟨110⟩ direction, are formed from thin wetting layers, while {105}-faceted structures, called pre-quantum dots (p-QDs), are formed from thicker layers. The wetting layer thickness and thus the misfit strain energy controls the type of structure. The crossover thickness between the hillock and p-QDs regime is between 1.6 and 2.1 ML. The hillocks have larger lateral dimensions and volumes than p-QDs, and the p-QDs are exceptionally small quantum dots with a lower limit of 10 nm in width. Our work opens a new pathway to the control of nanostructure morphology and size in the elastically strained Ge/Si system.

  12. Effect of high-pressure H{sub 2}O treatment on elimination of interfacial GeO{sub X} layer between ZrO{sub 2} and Ge stack

    SciTech Connect

    Huang, Chen-Shuo; Liu, Po-Tsun

    2011-08-22

    This investigation demonstrates the effect of high-pressure H{sub 2}O treatment on the elimination of the interfacial germanium suboxide (GeO{sub X}) layer between ZrO{sub 2} and Ge. The formation of GeO{sub X} interlayer increases the gate-leakage current and worsen the controllability of the gate during deposition or thermal cycles. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy reveal that high-pressure H{sub 2}O treatment eliminates the interfacial GeO{sub X} layer. The physical mechanism involves the oxidation of non-oxidized Zr with H{sub 2}O and the reduction of GeO{sub X} by H{sub 2}. Treatment with H{sub 2}O reduces the gate-leakage current of a ZrO{sub 2}/Ge capacitor by a factor of 1000.

  13. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    NASA Astrophysics Data System (ADS)

    Höger, Ingmar; Himmerlich, Marcel; Gawlik, Annett; Brückner, Uwe; Krischok, Stefan; Andrä, Gudrun

    2016-01-01

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiOxNy) or silicon oxide (SiO2) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiOxNy formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiOxNy top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  14. Initial stage growth of GexSi1−x layers and Ge quantum dot formation on GexSi1−x surface by MBE

    PubMed Central

    2012-01-01

    Critical thicknesses of two-dimensional to three-dimensional growth in GexSi1−x layers were measured as a function of composition for different growth temperatures. In addition to the (2 × 1) superstructure for a Ge film grown on Si(100), the GexSi1−x layers are characterized by the formation of (2 × n) reconstruction. We measured n for all layers of Ge/GexSi1−x/Ge heterosystem using our software with respect to the video recording of reflection high-energy electron diffraction (RHEED) pattern during growth. The n reaches a minimum value of about 8 for clear Ge layer, whereas for GexSi1−x films, n is increased from 8 to 14. The presence of a thin strained film of the GexSi1−x caused not only the changes in critical thicknesses of the transitions, but also affected the properties of the germanium nanocluster array for the top Ge layer. Based on the RHEED data, the hut-like island form, which has not been previously observed by us between the hut and dome islands, has been detected. Data on the growth of Ge/GexSi1−x/Ge heterostructures with the uniform array of islands in the second layer of the Ge film have been received. PMID:23043796

  15. Tuneable Magnetic Phase Transitions in Layered CeMn2Ge(2-x)Six Compounds.

    PubMed

    Md Din, M F; Wang, J L; Cheng, Z X; Dou, S X; Kennedy, S J; Avdeev, M; Campbell, S J

    2015-01-01

    The structural and magnetic properties of seven CeMn2Ge(2-x)Six compounds with x = 0.0-2.0 have been investigated in detail. Substitution of Ge with Si leads to a monotonic decrease of both a and c along with concomitant contraction of the unit cell volume and significant modifications of the magnetic states - a crossover from ferromagnetism at room temperature for Ge-rich compounds to antiferromagnetism for Si-rich compounds. The magnetic phase diagram has been constructed over the full range of CeMn2Ge(2-x)Six compositions and co-existence of ferromagnetism and antiferromagnetism has been observed in CeMn2Ge1.2Si0.8, CeMn2Ge1.0Si1.0 and CeMn2Ge0.8Si1.2 with novel insight provided by high resolution neutron and X-ray synchrotron radiation studies. CeMn2Ge(2-x)Six compounds (x = 0, 0.4 and 0.8) exhibit moderate isothermal magnetic entropy accompanied with a second-order phase transition around room temperature. Analysis of critical behaviour in the vicinity of TC(inter) for CeMn2Ge2 compound indicates behaviour consistent with three-dimensional Heisenberg model predictions. PMID:26090940

  16. Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

    NASA Astrophysics Data System (ADS)

    Song, Sannian; Yao, Dongning; Song, Zhitang; Gao, Lina; Zhang, Zhonghua; Li, Le; Shen, Lanlan; Wu, Liangcai; Liu, Bo; Cheng, Yan; Feng, Songlin

    2015-02-01

    Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge2Sb2Te5 (GST) and GeSb8Te thin films were deposited by plasma-enhanced atomic layer deposition (ALD) method using Ge [(CH3)2 N]4, Sb [(CH3)2 N]3, Te(C4H9)2 as precursors and plasma-activated H2 gas as reducing agent of the metallorganic precursors. Compared with GST-based device, GeSb8Te-based device exhibits a faster switching speed and reduced reset voltage, which is attributed to the growth-dominated crystallization mechanism of the Sb-rich GeSb8Te films. These results show that ALD is an attractive method for preparation of phase-change materials.

  17. Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon.

    PubMed

    Song, Sannian; Yao, Dongning; Song, Zhitang; Gao, Lina; Zhang, Zhonghua; Li, Le; Shen, Lanlan; Wu, Liangcai; Liu, Bo; Cheng, Yan; Feng, Songlin

    2015-01-01

    Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge2Sb2Te5 (GST) and GeSb8Te thin films were deposited by plasma-enhanced atomic layer deposition (ALD) method using Ge [(CH3)2 N]4, Sb [(CH3)2 N]3, Te(C4H9)2 as precursors and plasma-activated H2 gas as reducing agent of the metallorganic precursors. Compared with GST-based device, GeSb8Te-based device exhibits a faster switching speed and reduced reset voltage, which is attributed to the growth-dominated crystallization mechanism of the Sb-rich GeSb8Te films. These results show that ALD is an attractive method for preparation of phase-change materials. PMID:25852385

  18. Crystal chemistry of layered carbide, Ti3(Si0.43Ge0.57)C2

    NASA Astrophysics Data System (ADS)

    Yang, Hexiong; Manoun, B.; Downs, R. T.; Ganguly, A.; Barsoum, M. W.

    2006-12-01

    The crystal structure of a layered ternary carbide, Ti3(Si0.43Ge0.57)C2, was studied with single-crystal X-ray diffraction. The compound has a hexagonal symmetry with space group P63/mmc and unit-cell parameters a=3.0823(1) Å, c=17.7702(6) Å, and V=146.21(1) Å3. The Si and Ge atoms in the structure occupy the same crystallographic site surrounded by six Ti atoms at an average distance of 2.7219 Å, and the C atoms are octahedrally coordinated by two types of symmetrically distinct Ti atoms, with an average C Ti distance of 2.1429 Å. The atomic displacement parameters for C and Ti are relatively isotropic, whereas those for A (=0.43Si+0.57Ge) are appreciably anisotropic, with U11 (=U22) being about three times greater than U33. Compared to Ti3SiC2, the substitution of Ge for Si results in an increase in both A Ti and C Ti bond distances. An electron density analysis based on the refined structure shows that each A atom is bonded to 6Ti atoms as well as to its 6 nearest neighbor A site atoms, whether the site is occupied by Si or Ge, suggesting that these bond paths may be significantly involved with electron transport properties.

  19. Characterization of Y-Ba-Cu-O thin films and yttria-stabilized zirconia intermediate layers on metal alloys grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Reade, R. P.; Mao, X. L.; Russo, R. E.

    1991-08-01

    The use of an intermediate layer is necessary for the growth of YBaCuO thin films on polycrystalline metallic alloys for tape conductor applications. A pulsed laser deposition process to grow controlled-orientation yttria-stabilized zirconia (YSZ) films as intermediate layers on Haynes Alloy No. 230 was developed and characterized. YBaCuO films deposited on these YSZ-coated substrates are primarily c-axis oriented and superconducting as deposited. The best YBaCuO films grow on (001)-oriented YSZ intermediate layers and have Tc (R = 0) = 86.0 K and Jc about 3000 A/sq cm at 77 K.

  20. Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

    PubMed Central

    2013-01-01

    Barium titanate (BaTiO3) thin films are prepared by conventional 2-methoxy ethanol-based chemical solution deposition. We report highly c-axis-oriented BaTiO3 thin films grown on silicon substrates, coated with a lanthanum oxynitrate buffer layer of 8.9 nm. The influence of the intermediate buffer layer on the crystallization of BaTiO3 film is investigated. The annealing temperature and buffer layer sintering conditions are optimized to obtain good crystal growth. X-ray diffraction measurements show the growth of highly oriented BaTiO3 thin films having a single perovskite phase with tetragonal geometry. The scanning electron microscopy and atomic force microscopy studies indicate the presence of smooth, crack-free, uniform layers, with densely packed crystal grains on the silicon surface. A BaTiO3 film of 150-nm thickness, deposited on a buffer layer of 7.2 nm, shows a dielectric constant of 270, remnant polarization (2Pr) of 5 μC/cm2, and coercive field (Ec) of 60 kV/cm. PMID:23391429

  1. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

    SciTech Connect

    Yurasov, D. V.; Bobrov, A. I.; Daniltsev, V. M.; Novikov, A. V.; Pavlov, D. A.; Skorokhodov, E. V.; Shaleev, M. V.; Yunin, P. A.

    2015-11-15

    Influence of the Ge layer thickness and annealing conditions on the parameters of relaxed Ge/Si(001) layers grown by molecular beam epitaxy via two-stage growth is investigated. The dependences of the threading dislocation density and surface roughness on the Ge layer thickness, annealing temperature and time, and the presence of a hydrogen atmosphere are obtained. As a result of optimization of the growth and annealing conditions, relaxed Ge/Si(001) layers which are thinner than 1 μm with a low threading dislocation density on the order of 10{sup 7} cm{sup –2} and a root mean square roughness of less than 1 nm are obtained.

  2. Thermal properties of a pyroelectric-ceramic infrared detector with metallic intermediate layer

    NASA Astrophysics Data System (ADS)

    Lee, Moon H.; Bae, Seong H.; Bhalla, Amar S.

    1998-06-01

    Infrared thermal detectors were prepared with pyroelectric PSN-PT-PZ (1/47/52) ceramics, where a signal electrode had a structure Au/metallic buffer/Pb(Zr,Ti)O3 ceramic. The effect of a metallic buffer layer on the voltage responsivity was investigated with a response to a step signal, made by a dynamic pyroelectric measurement. A pyroelectric ceramic wafer was prepared by a mixed-oxide technique. The Au layer (thickness 50 nm) and the metallic buffers (thickness 0 to 20 nm) of Cr, NiCr (80:20), and Ti were prepared by dc magnetron sputtering. In order to improve the light absorptivity, Au black was coated on the Au signal electrode by thermal evaporation. A detector without a buffer layer showed a noisy and fluctuating output signal. Among the three kinds of buffer materials, NiCr (80:20) and Ti adhered well with ceramics and showed good electrical and thermal contact, whereas Cr resulted in bad contacts. Considering the output voltage and thermal properties, the optimum thickness of the buffer layer was about 15 to 20 nm, and sensors with a Ti buffer 15 to 20 nm in thickness showed good detectivity. Thus, the stability and reliability of the infrared thermal sensors could be improved by using an appropriate buffer layer.

  3. GeP and (Ge{sub 1−x}Sn{sub x})(P{sub 1−y}Ge{sub y}) (x≈0.12, y≈0.05): Synthesis, structure, and properties of two-dimensional layered tetrel phosphides

    SciTech Connect

    Lee, Kathleen; Synnestvedt, Sarah; Bellard, Maverick; Kovnir, Kirill

    2015-04-15

    GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The layered crystal structures of these compounds were characterized by single crystal X-ray diffraction. Both phosphides crystallize in a GaTe structure type in the monoclinic space group C2/m (No. 12) with GeP: a=15.1948(7) Å, b=3.6337(2) Å, c=9.1941(4) Å, β=101.239(2)°; Ge{sub 0.93(3)}P{sub 0.95(1)}Sn{sub 0.12(3)}: a=15.284(9) Å, b=3.622(2) Å, c=9.207(5) Å, β=101.79(1)°. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Each layer is built of Ge–Ge dumbbells surrounded by a distorted antiprism of phosphorus atoms. Sn-doped GeP has a similar structural motif, but with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Graphical abstract: Layered phosphides GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Sn-doped GeP has a similar structural motif with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Highlights: • GeP crystallizes in a layered crystal structure. • Doping of Sn into GeP causes large structural distortions. • GeP is narrow bandgap semiconductor. • Sn-doped GeP exhibits an order of magnitude higher resistivity due to disorder.

  4. Ferromagnetic Order, Strong Magnetocrystalline Anisotropy, and Magnetocaloric Effect in the Layered Telluride Fe(3-δ)GeTe2.

    PubMed

    Verchenko, Valeriy Yu; Tsirlin, Alexander A; Sobolev, Alexei V; Presniakov, Igor A; Shevelkov, Andrei V

    2015-09-01

    The ternary transition-metal compound Fe(3-δ)GeTe2 is formed for 0 < δ < 0.3. X-ray diffraction and Mössbauer spectroscopy reveal its layered crystal structure with occasional Fe vacancies in the Fe2 site, whereas no Fe atoms occupy the interlayer space, so that only van der Waals interactions exist between adjacent layers. We explore magnetic behavior and ensuing functional properties of Fe(2.9)GeTe2 via neutron diffraction, thermodynamic and transport measurements, Mössbauer spectroscopy, and electronic structure calculations. Below T(C) = 225 K, Fe(2.9)GeTe2 is ferromagnetically ordered with the magnetic moments of 1.95(5) and 1.56(4) μ(B) at T = 1.5 K, both directed along c, which is the magnetic easy axis. Electronic structure calculations confirm this magnetic structure and reveal a remarkably high easy-axis anisotropy of 4.2 meV/f.u. Mössbauer spectra reveal the magnetic ordering too, although a drastic influence of Fe vacancies on quadrupolar splittings and local magnetic fields has been observed. A moderate magnetocaloric effect with the magnetic entropy change upon the ferromagnetic ordering transition, -ΔS ∼ 1.1 J·kg(-1)·K(-1) at 5 T, is found. PMID:26267350

  5. Development of Thermal Barrier Coating System with Superior Thermal Cyclic Properties with an Intermediate Layer Containing MoSi2

    NASA Astrophysics Data System (ADS)

    Sonoya, Keiji; Tobe, Shogo

    The authors have developed a method of improving the thermal cyclic resistance of the thermal barrier coating system that is deposited on gas turbine components. A conventional thermal barrier coating consists of a duplex system: a top coating and a bond coating. The developed system has a protective intermediate layer of MoSi2 which prevents oxidation of the bond coating. The conventional duplex plasma -sprayed coating was delaminated after 20 thermal cycles. On the other hand, the developed triple-layered coating system was not delaminated after 60 cycles. The reason for the enhanced resistance to thermal cycles of the developed triple-layered coating system is that the MoSi2 layer between the top coating and the bond coating has a self-repairing property. MoSi2 oxidizes to form SiO2, which seals the cracks and pores formed between the top coating and the bond coating. Thus, the formation of a thermally grown oxide(TGO), which causes the delamination of the coating, is prevented and the thermal cyclic resistance is improved.

  6. Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer

    NASA Astrophysics Data System (ADS)

    Taoka, Noriyuki; Capellini, Giovanni; von den Driesch, Nils; Buca, Dan; Zaumseil, Peter; Schubert, Markus Andreas; Klesse, Wolfgang Matthias; Montanari, Michele; Schroeder, Thomas

    2016-03-01

    A key factor for controlling Sn migration during GeSn deposition at a high temperature of 400 °C was investigated. Calculated results with a simple model for the Sn migration and experimental results clarified that low-deposition-speed (vd) deposition with vd’s of 0.68 and 2.8 nm/min induces significant Sn precipitation, whereas high-deposition-speed (vd = 13 nm/min) deposition leads to high crystallinity and good photoluminescence spectrum of the GeSn layer. These results indicate that vd is a key parameter, and that control of Sn migration at a high temperature is possible. These results are of great relevance for the application of high-quality Sn-based alloys in future optoelectronics devices.

  7. Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1- x Sn x epitaxial layer

    NASA Astrophysics Data System (ADS)

    Jeon, Jihee; Asano, Takanori; Shimura, Yosuke; Takeuchi, Wakana; Kurosawa, Masashi; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2016-04-01

    We examined the molecular beam epitaxy of Ge1- x Sn x with in situ Sb doping on Ge substrates. The effects of Sb doping on the crystalline and electrical characteristics of Ge1- x Sn x epitaxial layer were investigated in detail. We found that Sb doping with a concentration of 1020 cm-3 remarkably improves the crystallinity, and surface uniformity of the Ge1- x Sn x epitaxial layer by changing the growth mode by the surfactant effect of Sb atoms. Low-temperature Ge1- x Sn x growth with in situ Sb doping realizes a very high electron concentration of 1020 cm-3, which is above the thermal equilibrium solid solubility, as a result of suppressing Sb segregation and precipitation.

  8. Interface magnetism of Co{sub 2}FeGe Heusler alloy layers and magnetoresistance of Co{sub 2}FeGe/MgO/Fe magnetic tunnel junctions

    SciTech Connect

    Tanaka, M. A. Maezaki, D.; Ishii, T.; Okubo, A.; Mibu, K.; Hiramatsu, R.; Ono, T.

    2014-10-28

    The interface magnetism between Co{sub 2}FeGe Heusler alloy layers and MgO layers was investigated using {sup 57}Fe Mössbauer spectroscopy. Interface-sensitive samples, where the {sup 57}Fe isotope was used only for the interfacial atomic layer of the Co{sub 2}FeGe layer on the MgO layer, were prepared using atomically controlled alternate deposition. The {sup 57}Fe Mössbauer spectra of the interface-sensitive samples at room temperature were found similar to those of the bulk-sensitive Co{sub 2}FeGe films in which the {sup 57}Fe isotope was distributed throughout the films. On the other hand, the tunnel magnetoresistance effect of magnetic tunnel junctions with Co{sub 2}FeGe layers as the ferromagnetic electrodes showed strong reduction at room temperature. These results indicate that the strong temperature dependence of the tunneling magnetoresistance of magnetic tunnel junctions using Heusler alloy electrodes cannot be attributed simply to the reduction of the magnetization at the interfaces between the Heusler alloy and insulator layers.

  9. New class of Si-based superlattices - Alternating layers of crystalline Si and porous amorphous Si(1-x)Ge(x) alloys

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; George, T.; Jones, E. W.; Pike, W. T.; Ksendzov, A.; Vasquez, R. P.

    1992-01-01

    Superlattices consisting of alternating layers of crystalline Si and porous amorphous Si(1-x)Ge(x) have been fabricated. This is accomplished by first growing a Si/Si(0.7)Ge(0.3) superlattice by molecular beam epitaxy, followed by Ar-ion milling to form mesa structures, and finally by immersion in HF:HNO3:H2O. This solution creates a porous structure similar to that created by anodic etching, and a high selectivity is observed for the conversion of the alloy layers relative to the Si layers. The degree of selectivity is found to depend on alloy-layer thickness and strain. Superlattices have been fabricated from 1-micron wide mesas with Si(0.7)Ge(0.3) layers fully converted to 5-nm thick porous amorphous material.

  10. Intermediate honeycomb ordering to trigger oxygen redox chemistry in layered battery electrode

    PubMed Central

    Mortemard de Boisse, Benoit; Liu, Guandong; Ma, Jiangtao; Nishimura, Shin-ichi; Chung, Sai-Cheong; Kiuchi, Hisao; Harada, Yoshihisa; Kikkawa, Jun; Kobayashi, Yoshio; Okubo, Masashi; Yamada, Atsuo

    2016-01-01

    Sodium-ion batteries are attractive energy storage media owing to the abundance of sodium, but the low capacities of available cathode materials make them impractical. Sodium-excess metal oxides Na2MO3 (M: transition metal) are appealing cathode materials that may realize large capacities through additional oxygen redox reaction. However, the general strategies for enhancing the capacity of Na2MO3 are poorly established. Here using two polymorphs of Na2RuO3, we demonstrate the critical role of honeycomb-type cation ordering in Na2MO3. Ordered Na2RuO3 with honeycomb-ordered [Na1/3Ru2/3]O2 slabs delivers a capacity of 180 mAh g−1 (1.3-electron reaction), whereas disordered Na2RuO3 only delivers 135 mAh g−1 (1.0-electron reaction). We clarify that the large extra capacity of ordered Na2RuO3 is enabled by a spontaneously ordered intermediate Na1RuO3 phase with ilmenite O1 structure, which induces frontier orbital reorganization to trigger the oxygen redox reaction, unveiling a general requisite for the stable oxygen redox reaction in high-capacity Na2MO3 cathodes. PMID:27088834

  11. Intermediate honeycomb ordering to trigger oxygen redox chemistry in layered battery electrode

    NASA Astrophysics Data System (ADS)

    Mortemard de Boisse, Benoit; Liu, Guandong; Ma, Jiangtao; Nishimura, Shin-Ichi; Chung, Sai-Cheong; Kiuchi, Hisao; Harada, Yoshihisa; Kikkawa, Jun; Kobayashi, Yoshio; Okubo, Masashi; Yamada, Atsuo

    2016-04-01

    Sodium-ion batteries are attractive energy storage media owing to the abundance of sodium, but the low capacities of available cathode materials make them impractical. Sodium-excess metal oxides Na2MO3 (M: transition metal) are appealing cathode materials that may realize large capacities through additional oxygen redox reaction. However, the general strategies for enhancing the capacity of Na2MO3 are poorly established. Here using two polymorphs of Na2RuO3, we demonstrate the critical role of honeycomb-type cation ordering in Na2MO3. Ordered Na2RuO3 with honeycomb-ordered [Na1/3Ru2/3]O2 slabs delivers a capacity of 180 mAh g-1 (1.3-electron reaction), whereas disordered Na2RuO3 only delivers 135 mAh g-1 (1.0-electron reaction). We clarify that the large extra capacity of ordered Na2RuO3 is enabled by a spontaneously ordered intermediate Na1RuO3 phase with ilmenite O1 structure, which induces frontier orbital reorganization to trigger the oxygen redox reaction, unveiling a general requisite for the stable oxygen redox reaction in high-capacity Na2MO3 cathodes.

  12. Intermediate honeycomb ordering to trigger oxygen redox chemistry in layered battery electrode.

    PubMed

    Mortemard de Boisse, Benoit; Liu, Guandong; Ma, Jiangtao; Nishimura, Shin-Ichi; Chung, Sai-Cheong; Kiuchi, Hisao; Harada, Yoshihisa; Kikkawa, Jun; Kobayashi, Yoshio; Okubo, Masashi; Yamada, Atsuo

    2016-01-01

    Sodium-ion batteries are attractive energy storage media owing to the abundance of sodium, but the low capacities of available cathode materials make them impractical. Sodium-excess metal oxides Na2MO3 (M: transition metal) are appealing cathode materials that may realize large capacities through additional oxygen redox reaction. However, the general strategies for enhancing the capacity of Na2MO3 are poorly established. Here using two polymorphs of Na2RuO3, we demonstrate the critical role of honeycomb-type cation ordering in Na2MO3. Ordered Na2RuO3 with honeycomb-ordered [Na1/3Ru2/3]O2 slabs delivers a capacity of 180 mAh g(-1) (1.3-electron reaction), whereas disordered Na2RuO3 only delivers 135 mAh g(-1) (1.0-electron reaction). We clarify that the large extra capacity of ordered Na2RuO3 is enabled by a spontaneously ordered intermediate Na1RuO3 phase with ilmenite O1 structure, which induces frontier orbital reorganization to trigger the oxygen redox reaction, unveiling a general requisite for the stable oxygen redox reaction in high-capacity Na2MO3 cathodes. PMID:27088834

  13. Intermediate valence in single crystals of (Lu{sub 1−x}Y b{sub x}){sub 3}Rh{sub 4}Ge{sub 13} (0 ≤ x ≤ 1)

    SciTech Connect

    Rai, Binod K.; Morosan, E.

    2015-04-01

    Single crystals of (Lu{sub 1−x}Y b{sub x}){sub 3}Rh{sub 4}Ge{sub 13} were characterized by magnetization, specific heat, and electrical resistivity measurements. Doping Yb into the non-magnetic Lu{sub 3}Rh{sub 4}Ge{sub 13} compound tunes this cubic system’s properties from a superconductor with disordered metal normal state (x < 0.05) to a Kondo for 0.05 ≤ x ≤0.2 and intermediate valence at the highest Yb concentrations. The evidence for intermediate Yb valence comes from a broad maximum in the magnetic susceptibility and X-ray photoelectron spectroscopy. Furthermore, the resistivity displays a local maximum at finite temperatures at intermediate compositions x, followed by apparent metallic behavior closest to the Yb end compound in the series.

  14. Ge-related faceting and segregation during the growth of metastable (GaAs){sub 1{minus}x}(Ge{sub 2}){sub x} alloy layers by metal{endash}organic vapor-phase epitaxy

    SciTech Connect

    Norman, A.G.; Olson, J.M.; Geisz, J.F.; Moutinho, H.R.; Mason, A.; Al-Jassim, M.M.; Vernon, S.M.

    1999-03-01

    (GaAs){sub 1{minus}x}(Ge{sub 2}){sub x} alloy layers, 0{lt}x{lt}0.22, have been grown by metal{endash}organic vapor-phase epitaxy on vicinal (001) GaAs substrates. Transmission electron microscopy revealed pronounced phase separation in these layers, resulting in regions of GaAs-rich zinc-blende and Ge-rich diamond cubic material that appears to lead to substantial band-gap narrowing. For x=0.1 layers, the phase-separated microstructure consisted of intersecting sheets of Ge-rich material on {l_brace}115{r_brace}B planes surrounding cells of GaAs-rich material, with little evidence of antiphase boundaries. Atomic force microscopy revealed {l_brace}115{r_brace}B surface faceting associated with the phase separation. {copyright} {ital 1999 American Institute of Physics.}

  15. Antiferromagnetic Kondo lattice in the layered compounds Re2NiGa9Ge2 (Re =Ce, Pr, Sm)

    NASA Astrophysics Data System (ADS)

    Zhu, Yanglin; Liu, Jinyu; Hu, Jin; Adams, Daniel; Spinu, Leonard; Mao, Zhiqiang

    Intermetallic compounds containing rare-earth/actinide elements with 4f/5f electrons have formed a special family of strongly correlated materials, i.e. heavy fermion systems. We have recently found a new layered rare earth intermetallic system showing moderate heavy fermion behavior: Re2NiGa9Ge2 (Re =Ce, Sm, Pr). The Re =Ce and Sm members were previously synthesized, while their electronic properties have not been reported. We have recently grown single crystals of Re2NiGa9Ge2 (Re =Ce, Sm, Pr) and characterized their electronic and magnetic properties. We find all these materials are antiferromagnetic, with TN = 2.5 K, 5 K, 3.4 K respectively for Re =Ce, Pr and Sm. Moreover, they also exhibit large values of electronic specific coefficient: γ ~ 101 mJ mol-Ce-1 K-2 for Re =Ce, 368 mJ mol-Pr-1 K-2 for Re =Pr, and 196.4 mJ mol-Sm-1 K-2 for Re =Sm, indicating enhanced Kondo effect and the presence of AFM Kondo lattice. Our findings suggest that Re2NiGa9Ge2 (Re =Ce, Pr, Sm) could be interesting candidate materials for exploring novel exotic properties of correlated electrons through external parameter tuning such as chemical substitution and pressure.

  16. Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF2 buffer layers

    NASA Astrophysics Data System (ADS)

    Lord, R. J.; Su, P.-Y.; Bhat, I.; Zhang, S. B.; Lu, T.-M.; Wang, G.-C.

    2015-09-01

    Heteroepitaxial CdTe films were grown by metal organic chemical vapor deposition on glass substrates through nanostructured Ge/CaF2 buffer layers which were biaxially oriented. It allows us to explore the structural properties of multilayer biaxial semiconductor films which possess small angle grain boundaries and to test the principle of a solar cell made of such low-cost, low-growth-temperature semiconductor films. Through the x-ray diffraction and x-ray pole figure analysis, the heteroepitaxial relationships of the mutilayered films are determined as [111] in the out-of-plane direction and <1\\bar{1}0>CdTe//<1\\bar{1}0>Ge//{< \\bar{1}10> }{{{CaF}}2} in the in-plane direction. The I-V curves measured from an ITO/CdS/CdTe/Ge/CaF2/glass solar cell test structure shows a power conversion efficiency of ˜η = 1.26%, illustrating the initial success of such an approach. The observed non-ideal efficiency is believed to be due to a low shunt resistance and high series resistance as well as some residual large-angle grain boundary effects, leaving room for significant further improvement.

  17. Three-Dimensional Multiscale Modeling of Stable Intermediate State Formation Mechanism in a Single Active Layer- Phase Change Memory Cell

    NASA Astrophysics Data System (ADS)

    Dincer, Onur; Cinar, Ibrahim; Karakas, Vedat; Aslan, Ozgur Burak; Gokce, Aisha; Stipe, Barry; Katine, Jordan A.; Aktas, Gulen; Ozatay, Ozhan

    2014-03-01

    Phase change memory (PCM) appears as a potential memory technology with its superior scalability which could be enhanced by a boost in storage density via multiple-bit per cell functionality. Given the large contrast between set and reset states of a PCM cell it is yet unclear whether it is possible to create intermediate logic states reproducibly and controllably in a device with a single active phase change layer. Here we report the results of a 3D finite element model that pinpoints the direct effect of current distribution and the indirect effect of device top contact fabrication induced defects through modification of phase change kinetics (crystallite nucleation and growth rates) on stabilization of intermediate states. A comprehensive picture of the electrical, thermal and phase change dynamics is obtained using a multiphysics approach. Our study shows that homogeneous and heterogeneous phase transition can be induced in the active region such that nonuniform temperature distribution and modification of switching dynamics with various contact shapes and sizes play a major role in the stabilization of a mixed phase state. This work has been supported by the European Commission FP7 Marie Curie IRG grant: PCM-256281 and TUBITAK grant: 113F385.

  18. Experimental Study of Acoustic Properties of (0-3) Composite Materials for Intermediate Layer or Backing of Ultrasonic Transducers

    NASA Astrophysics Data System (ADS)

    Sugawara, Keisuke; Nishihira, Morimasa; Imano, Kazuhiko

    2005-06-01

    The acoustic properties of composite materials used for an intermediate layer or backing of an ultrasonic transducer are studied experimentally. (0-3) composite materials are formed from a mixture of epoxy resin and tungsten powder for various weight ratios and their acoustic properties are measured. The experimental results are compared with the results predicted by different models, which are based on the elastic-wave scattering theory, to verify if the measured acoustic properties agree with theoretical estimations. For the ultrasonic velocities, the estimations of the Devaney model were closest to the experimental results. The weight fractions of tungsten powder for the composite materials, which have objective acoustic properties, can easily be estimated by theoretical calculations using the Devaney model.

  19. Structural and electrical studies of ultrathin layers with Si{sub 0.7}Ge{sub 0.3} nanocrystals confined in a SiGe/SiO{sub 2} superlattice

    SciTech Connect

    Vieira, E. M. F.; Martin-Sanchez, J.; Rolo, A. G.; Levichev, S.; Gomes, M. J. M.; Parisini, A.; Buljan, M.; Capan, I.; Alves, E.; Barradas, N. P.; Conde, O.; Bernstorff, S.; Chahboun, A.

    2012-05-15

    In this work, SiGe/SiO{sub 2} multi-layer (ML) films with layer thickness in the range of a few nanometers were successfully fabricated by conventional RF-magnetron sputtering at 350 deg. C. The influence of the annealing treatment on SiGe nanocrystals (NCs) formation and crystalline properties were investigated by Raman spectroscopy and grazing incidence x-ray diffraction. At the annealing temperature of 800 deg. C, where well defined SiGe NCs were observed, a thorough structural investigation of the whole ML structure has been undertaken by Rutherford backscattering spectroscopy, grazing incidence small angle x-ray scattering, high resolution transmission electron microscopy, and annular dark field scanning transmission electron microscopy. Our results show that the onset of local modifications to the ML composition takes place at this temperature for annealing times of the order of a few tens of minutes with the formation of defective regions in the upper portion of the ML structure. Only the very first layers over the Si substrate appear immune to this problem. This finding has been exploited for the fabrication of a defect free metal-oxide-semiconductor structure with a well-defined single layer of SiGe NCs. A memory effect attributed to the presence of the SiGe NCs has been demonstrated by high frequency capacitance-voltage measurements.

  20. Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy

    SciTech Connect

    Ali, Dyan; Richardson, Christopher J. K.

    2012-11-15

    The authors present a study on the thermal evolution of the reflection high-energy electron diffraction pattern of chemically cleaned (001)-oriented Si, Ge, and SiGe surfaces, associating observed changes in the reconstructions with the desorption of known residual contaminants for Si and Ge surfaces. The implications of residual oxides prior to epitaxy on stacking fault densities in the grown films are presented. Further evidence for the two-phase nature of oxides on SiGe surfaces is provided, demonstrating that it is necessary to heat a SiGe surface up to the thermal deoxidation temperature of a Si surface to obtain stacking fault-free growth.

  1. Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

    SciTech Connect

    Okba, F.; Cherkashin, N.; Claverie, A.; Rossi, F.; Merabet, A.

    2010-07-19

    We have quantitatively studied by transmission electron microscopy the growth kinetics of platelets formed during the continuous hydrogenation of a Si substrate/SiGe/Si heterostructure. We have evidenced and explained the massive transfer of hydrogen from a population of platelets initially generated in the upper Si layer by plasma hydrogenation towards a population of larger platelets located in the SiGe layer. We demonstrate that this type of process can be used not only to precisely localize the micro-cracks, then the fracture line at a given depth but also to 'clean' the top layer from pre-existing defects.

  2. Effect of RuCoCr-oxide intermediate layers on the growth, microstructure, and recording performance of CoCrPt-SiO2 perpendicular recording media

    NASA Astrophysics Data System (ADS)

    Srinivasan, Kumar; Piramanayagam, S. N.; Kay, Yew Seng

    2010-02-01

    The crystallographic growth, magnetic properties, microstructure, and recording performance of CoCrPt-SiO2 perpendicular magnetic recording media on RuCoCr type of intermediate layers were systematically investigated. Excellent Co (00•2) crystallographic texture with dispersion Δθ50 as low as 3.2° could be obtained on the RuCoCr as the grain isolation layer, whereas the Δθ50 on the pure Ru grain isolation layer was 3.9°. Upon injecting oxygen into the RuCoCr layer via reactive sputtering and at high sputter pressures, grain center-to-center distance as small as 5.9 nm with a distribution of about 13% was achieved. The Δθ50 deteriorated on the RuCoCr-oxide type of intermediate layers, however, it remained comparable to that on the pure Ru layers. Signal-to-noise ratio also increased on the RuCoCr-oxide grain isolation layers due to the decreased grain sizes. The effectiveness of the RuCoCr-oxide type of intermediate layers toward grain size reduction and in improving the performance of perpendicular magnetic recording media is discussed.

  3. Characterization of Y-Ba-Cu-O thin films and yttria-stabilized zirconia intermediate layers on metal alloys grown by pulsed laser deposition

    SciTech Connect

    Reade, R.P.; Mao, X.L.; Russo, R.E. )

    1991-08-05

    The use of an intermediate layer is necessary for the growth of YBaCuO thin films on polycrystalline metallic alloys for tape conductor applications. A pulsed laser deposition process to grow controlled-orientation yttria-stabilized zirconia (YSZ) films as intermediate layers on Haynes Alloy No. 230 was developed and characterized. YBaCuO films deposited on these YSZ-coated substrates are primarily {ital c}-axis oriented and superconducting as deposited. The best YBaCuO films grow on (001) oriented YSZ intermediate layers and have {ital T}{sub {ital c}} ({ital R}=0) = 86.0 K and {ital J}{sub {ital c}} {similar to} 3{times}10{sup 3} A/cm{sup 2} at 77 K.

  4. Enhancement of recombination process using silver and graphene quantum dot embedded intermediate layer for efficient organic tandem cells.

    PubMed

    Ho, Nhu Thuy; Tien, Huynh Ngoc; Jang, Se-Joeng; Senthilkumar, Velusamy; Park, Yun Chang; Cho, Shinuk; Kim, Yong Soo

    2016-01-01

    High performance of organic tandem solar cell is largely dependent on transparent and conductive intermediate layer (IML). The current work reports the design and fabrication of an IML using a simple solution process. The efficiency of a homo-tandem device with poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester as an active layer and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/poly(ethylenimine) as an IML was initially found to be 3.40%. Further enhancement of the cell efficiency was achieved using silver nanoparticles (Ag-NPs) of different sizes and graphene quantum dot embedded IML. A maximum efficiency of 4.03% was achieved using 7 nm Ag-NPs that contribute to a better recombination process. Also, the performance of the tandem cell was solely based on the electrical improvements indicated by the current - voltage measurements, external quantum efficiency and impedance analysis. The use of Ag-NPs in the IML has been shown to lengthen the life time of electron-hole pairs in the device. This study thus paves way to develop such efficient IMLs for more efficient tandem solar cells. PMID:27453530

  5. Enhancement of recombination process using silver and graphene quantum dot embedded intermediate layer for efficient organic tandem cells

    PubMed Central

    Ho, Nhu Thuy; Tien, Huynh Ngoc; Jang, Se-Joeng; Senthilkumar, Velusamy; Park, Yun Chang; Cho, Shinuk; Kim, Yong Soo

    2016-01-01

    High performance of organic tandem solar cell is largely dependent on transparent and conductive intermediate layer (IML). The current work reports the design and fabrication of an IML using a simple solution process. The efficiency of a homo-tandem device with poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester as an active layer and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/poly(ethylenimine) as an IML was initially found to be 3.40%. Further enhancement of the cell efficiency was achieved using silver nanoparticles (Ag-NPs) of different sizes and graphene quantum dot embedded IML. A maximum efficiency of 4.03% was achieved using 7 nm Ag-NPs that contribute to a better recombination process. Also, the performance of the tandem cell was solely based on the electrical improvements indicated by the current - voltage measurements, external quantum efficiency and impedance analysis. The use of Ag-NPs in the IML has been shown to lengthen the life time of electron-hole pairs in the device. This study thus paves way to develop such efficient IMLs for more efficient tandem solar cells. PMID:27453530

  6. Enhancement of recombination process using silver and graphene quantum dot embedded intermediate layer for efficient organic tandem cells

    NASA Astrophysics Data System (ADS)

    Ho, Nhu Thuy; Tien, Huynh Ngoc; Jang, Se-Joeng; Senthilkumar, Velusamy; Park, Yun Chang; Cho, Shinuk; Kim, Yong Soo

    2016-07-01

    High performance of organic tandem solar cell is largely dependent on transparent and conductive intermediate layer (IML). The current work reports the design and fabrication of an IML using a simple solution process. The efficiency of a homo-tandem device with poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester as an active layer and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/poly(ethylenimine) as an IML was initially found to be 3.40%. Further enhancement of the cell efficiency was achieved using silver nanoparticles (Ag-NPs) of different sizes and graphene quantum dot embedded IML. A maximum efficiency of 4.03% was achieved using 7 nm Ag-NPs that contribute to a better recombination process. Also, the performance of the tandem cell was solely based on the electrical improvements indicated by the current - voltage measurements, external quantum efficiency and impedance analysis. The use of Ag-NPs in the IML has been shown to lengthen the life time of electron-hole pairs in the device. This study thus paves way to develop such efficient IMLs for more efficient tandem solar cells.

  7. Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment

    NASA Astrophysics Data System (ADS)

    Gupta, Suyog; Chen, Robert; Harris, James S.; Saraswat, Krishna C.

    2013-12-01

    GeSn is quickly emerging as a potential candidate for high performance Si-compatible transistor technology. Fabrication of high-ĸ gate stacks on GeSn with good interface properties is essential for realizing high performance field effect transistors based on this material system. We demonstrate an effective surface passivation scheme for n-Ge0.97Sn0.03 alloy using atomic layer deposition (ALD) of Al2O3. The effect of pre-ALD wet chemical surface treatment is analyzed and shown to be critical in obtaining a good quality interface between GeSn and Al2O3. Using proper surface pre-treatment, mid-gap trap density for the Al2O3/GeSn interface of the order of 1012 cm-2 has been achieved.

  8. Electromodulation spectroscopy of direct optical transitions in Ge1-xSnx layers under hydrostatic pressure and built-in strain

    NASA Astrophysics Data System (ADS)

    Dybała, F.; Żelazna, K.; Maczko, H.; Gladysiewicz, M.; Misiewicz, J.; Kudrawiec, R.; Lin, H.; Chen, R.; Shang, C.; Huo, Y.; Kamins, T. I.; Harris, J. S.

    2016-06-01

    Unstrained Ge1-xSnx layers of various Sn concentration (1.5%, 3%, 6% Sn) and Ge0.97Sn0.03 layers with built-in compressive (ɛ = -0.5%) and tensile (ɛ = 0.3%) strain are grown by molecular beam epitaxy and studied by electromodulation spectroscopy (i.e., contactless electroreflectance and photoreflectance (PR)). In order to obtain unstrained GeSn layers and layers with different built-in in-plane strains, virtual InGaAs substrates of different compositions are grown prior to the deposition of GeSn layers. For unstrained Ge1-xSnx layers, the pressure coefficient for the direct band gap transition is determined from PR measurements at various hydrostatic pressures to be 12.2 ± 0.2 meV/kbar, which is very close to the pressure coefficient for the direct band gap transition in Ge (12.9 meV/kbar). This suggests that the hydrostatic deformation potentials typical of Ge can be applied to describe the pressure-induced changes in the electronic band structure of Ge1-xSnx alloys with low Sn concentrations. The same conclusion is derived for the uniaxial deformation potential, which describes the splitting between heavy-hole (HH) and light-hole (LH) bands as well as the strain-related shift of the spin-orbit (SO) split-off band. It is observed that the HH, LH, and SO related transitions shift due to compressive and tensile strain according to the Bir-Pikus theory. The dispersions of HH, LH, and SO bands are calculated for compressive and tensile strained Ge0.97Sn0.03 with the 8-band kp Hamiltonian including strain effects, and the mixing of HH and LH bands is discussed. In addition, the dispersion of the electronic band structure is calculated for unstrained Ge1-xSnx layers (3% and 6% Sn) at high hydrostatic pressure with the 8-band kp Hamiltonian, and the pressure-induced changes in the electronic band structure are discussed.

  9. Coarse, Intermediate and High Resolution Numerical Simulations of the Transition of a Tropical Wave Critical Layer to a Tropical Storm

    NASA Technical Reports Server (NTRS)

    Montgomery, M. T.; Dunkerton, T. J.; Wang, Z.

    2010-01-01

    Recent work has hypothesized that tropical cyclones in the deep Atlantic and eastern Pacific basins develop from within the cyclonic Kelvin cat's eye of a tropical easterly wave critical layer located equatorward of the easterly jet axis. The cyclonic critical layer is thought to be important to tropical cyclogenesis because its cat's eye provides (i) a region of cyclonic vorticity and weak deformation by the resolved flow, (ii) containment of moisture entrained by the developing flow and/or lofted by deep convection therein, (iii) confinement of mesoscale vortex aggregation, (iv) a predominantly convective type of heating profile, and (v) maintenance or enhancement of the parent wave until the developing proto-vortex becomes a self-sustaining entity and emerges from the wave as a tropical depression. This genesis sequence and the overarching framework for describing how such hybrid wave-vortex structures become tropical depressions/storms is likened to the development of a marsupial infant in its mother's pouch, and for this reason has been dubbed the "marsupial paradigm". Here we conduct the first multi-scale test of the marsupial paradigm in an idealized setting by revisiting the Kurihara and Tuleya problem examining the transformation of an easterly wave-like disturbance into a tropical storm vortex using the WRF model. An analysis of the evolving winds, equivalent potential temperature, and relative vertical vorticity is presented from coarse (28 km), intermediate (9 km) and high resolution (3.1 km) simulations. The results are found to support key elements of the marsupial paradigm by demonstrating the existence of rotationally dominant region with minimal strain/shear deformation near the center of the critical layer pouch that contains strong cyclonic vorticity and high saturation fraction. This localized region within the pouch serves as the "attractor" for an upscale "bottom up" development process while the wave pouch and proto-vortex move together.

  10. Enhanced heteroepitaxial growth of CoCrPt-SiO{sub 2} perpendicular magnetic recording media on optimized Ru intermediate layers

    SciTech Connect

    Srinivasan, Kumar; Piramanayagam, S. N.

    2008-01-15

    The crystallographic growth, interfacial roughness, and magnetic properties of CoCrPt-SiO{sub 2} perpendicular magnetic recording media prepared on various types of Ru intermediate growth layers were systematically investigated based on high angle and omega offset x-ray diffraction scans, rocking curve scans, synchrotron radiation based grazing incidence reflectivity scans, and magneto-optical Kerr hysteresis loops. For samples that make use of one Ru growth layer, voltage bias applied on the Ru layer was seen to have two observable effects: (1) the dispersion in the Ru(00{center_dot}2) perpendicular texture increased, but that of the Co(00{center_dot}2) remained unchanged, leading to identical layered growth and (2) the in-plane a-lattice parameter of the Ru decreased leading to enhanced heteroepitaxy with the Co. There was no significant change in the Ru-Co interfacial roughness with changing the bias on the Ru layer. The bias effect can be used to optimize the design of the Ru intermediate layers. A scheme that makes use of two Ru growth layers consisting of a bottom Ru layer prepared under zero bias, which is inserted below a second Ru layer prepared under biased conditions, is shown to lead to significant benefits such as improved texture without affecting the magnetic properties. This is due to the different functional roles ascribed to each of the Ru growth layers.

  11. Enhanced heteroepitaxial growth of CoCrPt -SiO2 perpendicular magnetic recording media on optimized Ru intermediate layers

    NASA Astrophysics Data System (ADS)

    Srinivasan, Kumar; Piramanayagam, S. N.

    2008-01-01

    The crystallographic growth, interfacial roughness, and magnetic properties of CoCrPt -SiO2 perpendicular magnetic recording media prepared on various types of Ru intermediate growth layers were systematically investigated based on high angle and omega offset x-ray diffraction scans, rocking curve scans, synchrotron radiation based grazing incidence reflectivity scans, and magneto-optical Kerr hysteresis loops. For samples that make use of one Ru growth layer, voltage bias applied on the Ru layer was seen to have two observable effects: (1) the dispersion in the Ru(00ṡ2) perpendicular texture increased, but that of the Co(00ṡ2) remained unchanged, leading to identical layered growth and (2) the in-plane a-lattice parameter of the Ru decreased leading to enhanced heteroepitaxy with the Co. There was no significant change in the Ru-Co interfacial roughness with changing the bias on the Ru layer. The bias effect can be used to optimize the design of the Ru intermediate layers. A scheme that makes use of two Ru growth layers consisting of a bottom Ru layer prepared under zero bias, which is inserted below a second Ru layer prepared under biased conditions, is shown to lead to significant benefits such as improved texture without affecting the magnetic properties. This is due to the different functional roles ascribed to each of the Ru growth layers.

  12. Atomic structure and composition of the 2×N reconstruction of the Ge wetting layer on Si(001) investigated by surface x-ray diffraction

    NASA Astrophysics Data System (ADS)

    Zhou, T.; Renaud, G.; Revenant, C.; Issartel, J.; Schülli, T. U.; Felici, R.; Malachias, A.

    2011-05-01

    The 2 × N reconstruction of the Ge/Si(001) wetting layer has been investigated by surface x-ray diffraction. At a substrate temperature of 670ˆC, the average N periodicity decreases from N = 11.5 to 8 with an increasing Ge coverage from one to three monolayers (ML). The top layer consists of asymmetric dimers with a bond length in the range of 2.50-2.60 Å and a buckling angle in the range of 9.4°-15.6°, depending on the Ge coverage. The obtained dimer bond lengths are similar to those calculated for alternating asymmetric mixed dimers. Intermixing of Ge with Si is found down to the sixth (eighth) layer for 2 (from 3 to 5) ML coverage. For 2 ML coverage, a quantitative surface x-ray diffraction data set has been measured. It is analyzed using a model describing the atomic structure and Ge occupation probability with a limited set of parameters to bypass the intrinsic lack of appreciable reflections of the 2 × N (N = 9) reconstruction. The Ge occupation probability varies periodically along the N direction, having its minimum value below the dimer vacancy lines. In addition, a more direct calculation of the Lorentz and detector acceptance corrections is given for rocking and radial scans.

  13. Study of formation process of cold intermediate layer based on reanalysis of Black Sea hydrophysical fields for 1971-1993

    NASA Astrophysics Data System (ADS)

    Korotaev, G. K.; Knysh, V. V.; Kubryakov, A. I.

    2014-01-01

    A reanalysis of hydrophysical fields for 1971-1993 is used to study the formation mechanisms of the cold intermediate layer (CIL): the advective mechanism (associated with the advection of cold waters formed in the northwestern shelf (NWS)) and the convective mechanism (caused by wintertime convection inside cyclonic gyres in the central part of the sea). We consider the periods of alternating atmospheric conditions: the mild winter of 1980-1981, normal winter of 1987-1988, and cold winter of 1992-1993. Interannual features of replenishment and renewal of "old" CIL waters caused by these mechanisms are identified. In particular, cooled shelf waters sink along the continental slope and merge with "old" CIL waters during the mild winter of 1980-1981 more than 1 month later than during the cold winter 1992-1993 and more than 3 weeks later than during the normal winter of 1987-1988. The Sevastopol anticyclonic gyre and the northwest branch of the Black Sea Rim Current markedly influence the transformation of entrained cold NWS waters transported to the southwest and the central part of the water area. The local formation process of cold intermediate waters is found to be caused by the wintertime penetrating convection over domelike isosurfaces of temperature and salinity arising due to rising constant halocline (pycnocline) at the centers of cyclonic gyres because of the intensification of the wintertime circulation. Anomalously cold surface water, characterized by increased density, gradually sinks. An analysis of TS indices indicates that the transformed cold water spreads out over isopycnic surfaces with time, being entrained in cyclonic circulation and spreading throughout the sea, thus renewing "old" CIL waters.

  14. Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

    NASA Astrophysics Data System (ADS)

    Usuda, Koji; Mizuno, Tomohisa; Tezuka, Tsutomu; Sugiyama, Naoharu; Moriyama, Yoshihiko; Nakaharai, Shu; Takagi, Shin-ichi

    2004-03-01

    Strained-Si-on-insulator (strained-SOI) MOSFETs are one of the most promising device structures for high-speed and/or low-power CMOS. In realizing strained-Si MOS LSI, fabrication of strained-Si MOSFETs with small active area is indispensable, and thus the strain relaxation of strained-SOI mesa islands was investigated in this study. Thin strained-Si films were grown on thin relaxed SiGe-on-insulator (SGOI) structures. The isolation process was carried out by using chemical-dry-etching (CDE) to fabricate samples with small active areas. Using Raman spectroscopy, strained-Si islands on SGOI substrates were investigated. As a result, it was confirmed that the strained-Si layers grown on relaxed SiGe ( x=0.28) before and after mesa isolation, down to 5 μm in size, had almost no relaxation after rapid-thermal-annealing (RTA) at 1000 °C. Furthermore, it was confirmed that the nano-beam electron diffraction (NBD) measurement showed a similar tendency regarding the strain relaxation.

  15. Generation of conducting polymer-based heterojunctions, diodes, and capacitors using an intermediate-layer lithography method

    NASA Astrophysics Data System (ADS)

    Liu, Xinchuan; Chakraborty, Anirban; Parthasarathi, Ganga; Luo, Cheng

    2007-04-01

    In this work, conducting polymer-based heterojunctions, diodes and capacitors have been generated using an intermediate-layer lithography (ILL) approach which has been recently developed in our group. Polypyrrole (PPy) and poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS), Poly(methyl methacrylate) (PMMA) and aluminum were used as component materials in these devices. Compared with Si-based devices, conducting polymerbased devices have distinctive advantages of low weight and good flexibility, and may potentially replace the corresponding Si-based devices. A challenge is how to fabricate the conducting polymer-based microsystems. Most conducting polymers are sensitive to the environment, and their electrical properties tend to deteriorate over time due to overoxidation (air), moisture, high temperature and chemical alteration. The current fabrication techniques (e.g. lift-off, dry and wet etching processes) used in lithographic approaches involve ultra-violet, electron-beam, x-ray, gases (e.g., oxygen and nitrogen), DI water, and/or chemical solution (e.g. photoresist and acetone), making them improper to pattern conducting polymers. Since the ILL method does not involve aggressive chemistry in generation of patterns, it has been employed in this work to fabricate conducting polymer-based microdevices, particularly diodes and capacitors. In fabrication of the devices, multiple layers of polymers (e.g., PPy and PEDOT) and metals (e.g., Al) are coated on a PMMA sheet followed by the patterning with the insertion of Si molds. The detailed fabrication procedure and testing results are given in this paper.

  16. Bipolar resistive switching behavior of an amorphous Ge2Sb2Te5 thin films with a Te layer

    NASA Astrophysics Data System (ADS)

    Yoo, Sijung; Eom, Taeyong; Gwon, Taehong; Hwang, Cheol Seong

    2015-03-01

    The mechanism of bipolar resistive switching (BRS) of amorphous Ge2Sb2Te5 (GST) thin films sandwiched between inert electrodes (Ti and Pt) was examined. Typical bipolar resistive switching behavior with a high resistance ratio (~103) and reliable switching characteristics was achieved. High-resolution transmission electron microscopy revealed the presence of a conductive Te-filament bridging between the top and bottom electrodes through an amorphous GST matrix. The conduction mechanism analysis showed that the low-resistance state was semiconducting and dominated by band transport, whereas Poole-Frenkel conduction governed the carrier transport in the high-resistance state. Thus, the BRS behavior can be attributed to the formation and rupture of the semiconducting conductive Te bridge through the migration of the Te ions in the amorphous GST matrix under a high electric field. The Te ions are provided by the thin (~5 nm) Te-rich layer formed at the bottom electrode interface.

  17. Electrical characterization of low temperature deposited TiO 2 films on strained-SiGe layers

    NASA Astrophysics Data System (ADS)

    Dalapati, G. K.; Chatterjee, S.; Samanta, S. K.; Maiti, C. K.

    2003-04-01

    Thin films of titanium dioxide have been deposited on strained Si 0.82Ge 0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C 3H 7) 4] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density ( Dit), fixed oxide charge density ( Qf/ q) and flat-band voltage ( VFB) of as-deposited films were found to be 13.2, 40.6 Å, 6×10 11 eV -1 cm -2, 3.1×10 11 cm -2 and -1.4 V, respectively. The capacitance-voltage ( C- V), current-voltage ( I- V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications.

  18. Effect of nonstoichiometry on the electrophysical properties of the layered compounds Ge{sub 3}Bi{sub 2}Te{sub 6} and GeBi{sub 2}Te{sub 4}

    SciTech Connect

    Shelimova, L.E.; Karpinskii, O.G.; Avilov, E.S.; Kretova, M.A.; Lubman, C.U.

    1994-12-01

    The objective of this work was to investigate the effect of deviation from stoichiometry on the electrophysical properties (electrical and thermal conductivity, thermoelectric power, and carrier concentration) of the ternary layered semiconducting compounds Ge{sub 3{plus_minus}{delta}1}Bi{sub 2+{delta}2}Te{sub 6+{delta}3} and Ge{sub 1{plus_minus}{delta}3}, which are promising for use in thermoelectric converters.The electrophysical properties were measured at 300 K. The Ge{sub 1-{delta}1}Bi{sub 2+{delta}3} alloys were studied by powder X-ray diffraction analysis on a DRON UM-1 diffractometer (CoK{sub {alpha}} radiation). It was found that Ge{sub 3{plus_minus}{delta}1} Bi{sub 2+{delta}2}Te{sub 6{plus_minus}{delta}3} is a nonstoichiometric phase with p-type conductivity throughout the {delta}{sub 1}, {delta}{sub 2}, and {delta}{sub 3} ranges examined. Our results suggest that cation vacancies are likely to be the dominant nonstoichiometric defects responsible for the high concentration of holes. The conductivity of Ge{sub 1{plus_minus}{delta}1}Bi{sub 2}Te{sub 4} changes from the p-type in the Ge-deficient alloys to the n-type in the Gerich alloys.

  19. Evidence of oxygen vacancy and possible intermediate gap state in layered α-MoO3 single-crystal nanobelts

    NASA Astrophysics Data System (ADS)

    Chen, C. Z.; Li, Y.; Tang, X. D.

    2016-01-01

    Multilayered meso-structured MoO3 nanobelts have been synthesized by thermally oxidizing a molybdenum chip in a reduced oxygen atmosphere, with a view to disclosing the existence of oxygen vacancy and understanding the mechanism behind the influence of oxygen vacancy on the electronic structure of molybdenum oxides. Based on the measurements from X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscope (SEM) and transmission electron microscope (TEM), it is found that the as-grown sample is single-crystal α-MoO3 with a (001) preferred orientation, which shows an irregular belt-like morphology being composed of some ~20 nm single-crystal thin layers. The present sample includes a lot of oxygen vacancies in the lattice, as evidenced by the considerably reduced coordination number of the central Mo atoms from X-ray absorption spectra (XAS) as well as the red shift of the main Raman peaks. The existence of the oxygen vacancies are further tested by the photoluminescence (PL) results as the main emission peak shows an obvious red shift with the corresponding optical band gap reduced to 2.3 eV. Very importantly, an extra emission positioned at 738 nm (1.68 eV) is believed to originate from the recombination of the electrons from the intermediate band (IB) to the valence band (VB), and the formation of the IB in the gap is also caused by oxygen-ion vacancies.

  20. Magnesium substituted hydroxyapatite coating on titanium with nanotublar TiO2 intermediate layer via electrochemical deposition

    NASA Astrophysics Data System (ADS)

    Yajing, Yan; Qiongqiong, Ding; Yong, Huang; Han, Shuguang; Pang, Xiaofeng

    2014-06-01

    Hydroxyapatite (HAp) coatings doped with magnesium ion is an attractive method to improve the biocompatibility and biodegradability of HAp coatings. In this paper, we used electrochemical deposition to study the production of magnesium-doped HAp (MgHAp) coatings onto pure titanium with anodized titanium oxide (TiO2) nanotubes as intermediate layer. The morphology and composition of coatings were studied by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, and Fourier-transform infrared spectroscopy. Results indicated that Mg was uniformly distributed in the coatings, and each coating was found to be 21 μm thick. With Mg2+ incorporation, Ca2+ was substituted by Mg2+ in the MgHAp coating, thereby reducing apatite crystallinity and weekly increasing bond strength. The bioactivity and corrosion resistance of the coatings were improved in simulated body fluid and polarization tests, respectively. Cell culture tests indicated that the magnesium-substituted coatings had good biocompatibility and no adverse effect.

  1. Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer

    NASA Astrophysics Data System (ADS)

    Dev, Sachin; Remesh, Nayana; Rawal, Yaksh; Manik, Prashanth Paramahans; Wood, Bingxi; Lodha, Saurabh

    2016-03-01

    This work demonstrates the benefit of a lower contact barrier height, and hence reduced contact resistivity (ρc), using a low work-function metal (Yb) in unpinned metal-interfacial layer-semiconductor (MIS) contacts on n-type Ge. Fermi-level unpinning in MIS contacts on n-Ge is first established by introducing a 2 nm TiO2-x interfacial layer between various contact metals (Yb, Ti, Ni, Pt) and n-Ge. Further, Yb/TiO2-x/n-Ge MIS contact diodes exhibit higher current densities (up to 100×) and lower effective contact barrier height (up to 30%) versus Ti/TiO2-x control devices over a wide range of TiO2-x thickness (1-5 nm). Finally, low work-function Yb combined with doped TiO2-x having a low conduction band offset with Ge and high substrate doping (n+-Ge: 2.5 ×1019 cm-3) is shown to result in an ultra-low ρc value of 1.4 × 10-8 Ω cm2, 10 × lower than Ti/TiO2-x control devices.

  2. Coarse, intermediate and high resolution numerical simulations of the transition of a tropical wave critical layer to a tropical storm

    NASA Astrophysics Data System (ADS)

    Montgomery, M. T.; Wang, Z.; Dunkerton, T. J.

    2010-11-01

    Recent work has hypothesized that tropical cyclones in the deep Atlantic and eastern Pacific basins develop from within the cyclonic Kelvin cat's eye of a tropical easterly wave critical layer located equatorward of the easterly jet axis. The cyclonic critical layer is thought to be important to tropical cyclogenesis because its cat's eye provides (i) a region of cyclonic vorticity and weak deformation by the resolved flow, (ii) containment of moisture entrained by the developing flow and/or lofted by deep convection therein, (iii) confinement of mesoscale vortex aggregation, (iv) a predominantly convective type of heating profile, and (v) maintenance or enhancement of the parent wave until the developing proto-vortex becomes a self-sustaining entity and emerges from the wave as a tropical depression. This genesis sequence and the overarching framework for describing how such hybrid wave-vortex structures become tropical depressions/storms is likened to the development of a marsupial infant in its mother's pouch, and for this reason has been dubbed the "marsupial paradigm". Here we conduct the first multi-scale test of the marsupial paradigm in an idealized setting by revisiting the Kurihara and Tuleya problem examining the transformation of an easterly wave-like disturbance into a tropical storm vortex using the WRF model. An analysis of the evolving winds, equivalent potential temperature, and relative vertical vorticity is presented from coarse (28 km), intermediate (9 km) and high resolution (3.1 km) simulations. The results are found to support key elements of the marsupial paradigm by demonstrating the existence of a rotationally dominant region with minimal strain/shear deformation near the center of the critical layer pouch that contains strong cyclonic vorticity and high saturation fraction. This localized region within the pouch serves as the "attractor" for an upscale "bottom up" development process while the wave pouch and proto-vortex move together

  3. A high-sensitivity fiber-optic evanescent wave sensor with a three-layer structure composed of Canada balsam doped with GeO2.

    PubMed

    Zhong, Nianbing; Zhao, Mingfu; Zhong, Lianchao; Liao, Qiang; Zhu, Xun; Luo, Binbin; Li, Yishan

    2016-11-15

    In this paper, we present a high-sensitivity polymer fiber-optic evanescent wave (FOEW) sensor with a three-layer structure that includes bottom, inter-, and surface layers in the sensing region. The bottom layer and inter-layer are POFs composed of standard cladding and the core of the plastic optical fiber, and the surface layer is made of dilute Canada balsam in xylene doped with GeO2. We examine the morphology of the doped GeO2, the refractive index and composition of the surface layer and the surface luminous properties of the sensing region. We investigate the effects of the content and morphology of the GeO2 particles on the sensitivity of the FOEW sensors by using glucose solutions. In addition, we examine the response of sensors incubated with staphylococcal protein A plus mouse IgG isotype to goat anti-mouse IgG solutions. Results indicate very good sensitivity of the three-layer FOEW sensor, which showed a 3.91-fold improvement in the detection of the target antibody relative to a conventional sensor with a core-cladding structure, and the novel sensor showed a lower limit of detection of 0.2ng/l and a response time around 320s. The application of this high-sensitivity FOEW sensor can be extended to biodefense, disease diagnosis, biomedical and biochemical analysis. PMID:27311112

  4. Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer

    DOE PAGESBeta

    Lu, T. M.; Gamble, J. K.; Muller, R. P.; Nielsen, E.; Bethke, D.; Ten Eyck, G. A.; Pluym, T.; Wendt, J. R.; Dominguez, J.; Lilly, M. P.; et al

    2016-08-29

    Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si0.8Ge0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used heremore » leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.« less

  5. Investigating the origin of intense photoluminescence in Si capping layer on Ge1-xSnx nanodots by transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Kikkawa, Jun; Nakamura, Yoshiaki; Fujinoki, Norihito; Ichikawa, Masakazu

    2013-02-01

    The authors investigated the annealing effects on atomic structures and elemental compositions in a stacking structure, Si capping layer on Ge1-xSnx nanodots on Si substrate covered with ultrathin SiO2 film, to clarify the origin of intense photoluminescence at ˜0.8 eV from the structure, using transmission electron microscopy. After the annealing, it was found that decay of Ge1-xSnx nanodots, formation of SiOx precipitates embedded in Si-rich Si1-xGex layer at the Si cap/Si substrate interface, formation of SnO2 nanoparticles on the oxidized surface of the Si capping layer, and morphological change of dislocations in the Si capping layer occur. Reaction products that appear as a result of the movement of dislocations can be related to the origin of intense photoluminescence.

  6. Si Waveguide-Integrated Metal-Semiconductor-Metal and p-i-n-Type Ge Photodiodes Using Si-Capping Layer

    NASA Astrophysics Data System (ADS)

    Fujikata, Junichi; Miura, Makoto; Noguchi, Masataka; Okamoto, Daisuke; Horikawa, Tsuyoshi; Arakawa, Yasuhiko

    2013-04-01

    We studied Si waveguide-integrated metal-semiconductor-metal (MSM) and p-i-n-type Ge photodiodes (Ge-PDs), using a Si-capping layer. As for an MSM Ge-PD, the Schottky barrier height was increased up to 0.44 V by applying a 8-20 nm Si-capping layer, and a very low dark current density of approximately 0.4 nA/µm2 was achieved with a high responsivity of 0.8 A/W. In addition, a small electrode spacing of 1 µm realized high-speed photodetection of 20 Gbps. As for a p-i-n-type Ge-PD, by applying a 10-20 nm Si capping layer, the contact resistance between a metal electrode of Ti/TiN/Al and n+-Si capping layer was successfully reduced to 1×10-5 Ω.cm2. A 45 GHz bandwidth was obtained with a low dark current density of 0.8 nA/µm2. Moreover, a more than 20 GHz bandwidth was achieved with zero-bias voltage. In the case of zero-bias voltage operation, a 3 dB bandwidth was a little affected by input power, which would originate from the photocarrier screening effect on the built-in electric field.

  7. Changes in switching fields of CoCrPt-SiO2 perpendicular recording media due to Ru intermediate layer under low and high gas pressures

    NASA Astrophysics Data System (ADS)

    Xia, Weixing; Murakami, Yasukazu; Shindo, Daisuke; Takahashi, Migaku

    2009-01-01

    It is well known that the deposition of an intermediate Ru layer under high Ar pressure during the fabrication of CoCrPt-SiO2 perpendicular recording media is effective in improving the magnetic properties of the upper CoCrPt-SiO2 layer. The change in the switching fields of the CoCrPt-SiO2 recording layer resulting from the presence of the high-pressure Ru layer is investigated through experiments and computer simulation. The monotonous increase in the magnetic anisotropy Ku and the decrease in the intergranular exchange coupling of the CoCrPt grains due to the presence of the high-pressure Ru layer result in a slight increase in the nucleation field, a significant increase in the coercivity and the saturation field, and a decrease in the slope of the hysteresis loop.

  8. Layered Seed-Growth of AgGe Football-like Microspheres via Precursor-Free Picosecond Laser Synthesis in Water

    NASA Astrophysics Data System (ADS)

    Zhang, Dongshi; Gökce, Bilal; Notthoff, Christian; Barcikowski, Stephan

    2015-09-01

    Hybrid particles are of great significance in terms of their adjustable optical, electronic, magnetic, thermal and mechanical properties. As a novel technique, laser ablation in liquids (LAL) is famous for its precursor-free, “clean” synthesis of hybrid particles with various materials. Till now, almost all the LAL-generated particles originate from the nucleation-growth mechanism. Seed-growth of particles similar to chemical methods seems difficult to be achieved by LAL. Here, we not only present novel patch-joint football-like AgGe microspheres with a diameter in the range of 1 ~ 7 μm achievable by laser ablation in distilled water but also find direct evidences of their layered seed growth mechanism. Many critical factors contribute to the formation of AgGe microspheres: fast laser-generated plasma process provide an excellent condition for generating large amount of Ge and Ag ions/atoms, their initial nucleation and galvanic replacement reaction, while cavitation bubble confinement plays an important role for the increase of AgGe nuclei and subsequent layered growth in water after bubble collapse. Driven by work function difference, Ge acts as nucleation agent for silver during alloy formation. This new seed-growth mechanism for LAL technique opens new opportunities to develop a large variety of novel hybrid materials with controllable properties.

  9. Layered Seed-Growth of AgGe Football-like Microspheres via Precursor-Free Picosecond Laser Synthesis in Water

    PubMed Central

    Zhang, Dongshi; Gökce, Bilal; Notthoff, Christian; Barcikowski, Stephan

    2015-01-01

    Hybrid particles are of great significance in terms of their adjustable optical, electronic, magnetic, thermal and mechanical properties. As a novel technique, laser ablation in liquids (LAL) is famous for its precursor-free, “clean” synthesis of hybrid particles with various materials. Till now, almost all the LAL-generated particles originate from the nucleation-growth mechanism. Seed-growth of particles similar to chemical methods seems difficult to be achieved by LAL. Here, we not only present novel patch-joint football-like AgGe microspheres with a diameter in the range of 1 ~ 7 μm achievable by laser ablation in distilled water but also find direct evidences of their layered seed growth mechanism. Many critical factors contribute to the formation of AgGe microspheres: fast laser-generated plasma process provide an excellent condition for generating large amount of Ge and Ag ions/atoms, their initial nucleation and galvanic replacement reaction, while cavitation bubble confinement plays an important role for the increase of AgGe nuclei and subsequent layered growth in water after bubble collapse. Driven by work function difference, Ge acts as nucleation agent for silver during alloy formation. This new seed-growth mechanism for LAL technique opens new opportunities to develop a large variety of novel hybrid materials with controllable properties. PMID:26334136

  10. Growth and characterization of highly tensile strained Ge1-xSnx formed on relaxed InyGa1-yP buffer layers

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Loke, Wan Khai; Yin, Tingting; Zhang, Zheng; D'Costa, Vijay Richard; Dong, Yuan; Liang, Gengchiau; Pan, Jisheng; Shen, Zexiang; Yoon, Soon Fatt; Tok, Eng Soon; Yeo, Yee-Chia

    2016-03-01

    Ge0.94Sn0.06 films with high tensile strain were grown on strain-relaxed InyGa1-yP virtual substrates using solid-source molecular beam epitaxy. The in-plane tensile strain in the Ge0.94Sn0.06 film was varied by changing the In mole fraction in InxGa1-xP buffer layer. The tensile strained Ge0.94Sn0.06 films were investigated by transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. An in-plane tensile strain of up to 1% in the Ge0.94Sn0.06 was measured, which is much higher than that achieved using other buffer systems. Controlled thermal anneal experiment demonstrated that the strain was not relaxed for temperatures up to 500 °C. The band alignment of the tensile strained Ge0.94Sn0.06 on In0.77Ga0.23P was obtained by high resolution x-ray photoelectron spectroscopy. The Ge0.94Sn0.06/In0.77Ga0.23P interface was found to be of the type I band alignment, with a valence band offset of 0.31 ± 0.12 eV and a conduction band offset of 0.74 ± 0.12 eV.

  11. Magnetic anisotropy induced by crystal distortion in Ge{sub 1−x}Mn{sub x}Te/PbTe//KCl (001) ferromagnetic semiconductor layers

    SciTech Connect

    Knoff, W. Łusakowski, A.; Domagała, J. Z.; Minikayev, R.; Taliashvili, B.; Łusakowska, E.; Pieniążek, A.; Szczerbakow, A.; Story, T.

    2015-09-21

    Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge{sub 1−x}Mn{sub x}Te with x = 0.14 grown by molecular beam epitaxy on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge{sub 1−x}Mn{sub x}Te layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.

  12. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    SciTech Connect

    Baidakova, N. A.; Bobrov, A. I.; Drozdov, M. N.; Novikov, A. V.; Pavlov, D. A.; Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F.

    2015-08-15

    The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

  13. High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

    SciTech Connect

    Zhylik, A.; Benediktovich, A.; Ulyanenkov, A.; Guerault, H.; Myronov, M.; Dobbie, A.; Leadley, D. R.; Ulyanenkova, T.

    2011-06-15

    This work presents a detailed characterization, using high-resolution x-ray diffraction, of multilayered Si{sub 1-x}Ge{sub x} heterostructures grown on (001), (011), and (111) Si substrates by reduced pressure chemical vapor deposition. Reciprocal space mapping has been used to determine both the strain and Ge concentration depth profiles within each layer of the heterostructures after initially determining the crystallographic tilt of all the layers. Both symmetric and asymmetric reciprocal space maps were measured on each sample, and the evaluation was performed simultaneously for the whole data set. The ratio of misfit to threading dislocation densities has been estimated for each individual layer based on an analysis of diffuse x-ray scattering from the defects.

  14. Very low temperature (450 °C) selective epitaxial growth of heavily in situ boron-doped SiGe layers

    NASA Astrophysics Data System (ADS)

    Aubin, J.; Hartmann, J. M.; Veillerot, M.; Essa, Z.; Sermage, B.

    2015-11-01

    We have investigated the feasibility of selectively growing SiGe:B layers at 450 °C, 20 Torr in a 300 mm industrial reduced pressure chemical vapor deposition tool. A reduced H2 carrier gas mass-flow has been used in order to have acceptable growth rates at such a temperature, which is very low indeed. We have first of all studied on blanket Si wafers the in situ boron doping of SiGe with Si2H6, GeH4 and B2H6. A growth rate increase by a factor close to 7 together with a Ge concentration decrease from 53% down to 32% occurred as the diborane mass-flow increased. Very high B+ ion concentrations were obtained in layers that were single crystalline and smooth. Their concentration increased almost linearly with the B2H6 mass-flow, from 1.8 up to 8.3 × 1020 cm-3. The associated resistivity dropped from 0.43 down to 0.26 mΩ cm. We have then tested whether or not selectivity versus SiO2 could be achieved by adding various amounts of HCl to Si2H6 + GeH4 +B2H6. Single crystalline growth rates of intrinsic SiGe(:B) on Si were very similar to poly-crystalline growth rates on SiO2-covered substrates irrespective of the HCl flow. Straightforward selectivity was thus not feasible with a co-flow approach. As a consequence, a 450 °C deposition/etch (DE) process was evaluated. Growth occurred at 20 Torr with the above-mentioned chemistry, while the selective etch of poly-SiGe:B versus c-SiGe:B was conducted at 740 Torr with a medium HCl mass-flow (F(HCl)/F(H2) = 0.2) and a high H2 flow. A 2.2 etch selectivity was achieved while retaining single crystalline if slightly rough SiGe:B layers.

  15. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    SciTech Connect

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.

    2015-12-15

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al{sub 2}O{sub 3} and HfO{sub 2}. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO{sub 3}), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.

  16. Ternary arsenides ATt3As3 (A=K, Rb; Tt=Ge, Sn) with layered structures

    NASA Astrophysics Data System (ADS)

    Khatun, Mansura; Stoyko, Stanislav S.; Mar, Arthur

    2016-06-01

    The four ternary arsenides ATt3As3 (A=K, Rb; Tt=Ge, Sn) were obtained by reaction of the elements at 600-650 °C. They adopt an orthorhombic structure (space group Pnma, Z=4, with cell parameters ranging from a=9.9931(11) Å, b=3.7664(4) Å, c=18.607(2) Å for KGe3As3 to a=10.3211(11) Å, b=4.0917(4) Å, c=19.570(2) Å for RbSn3As3) containing corrugated [Tt3As3] layers built from Tt-centred trigonal pyramids and tetrahedra forming five-membered rings decorated with As handles. They can be considered to be Zintl phases with Tt atoms in +4, +3, and +1 oxidation states. Band structure calculations predict that these compounds are semiconductors with narrow band gaps (0.71 eV in KGe3As3, 0.50 eV in KSn3As3).

  17. High-performance ultraviolet detection and visible-blind photodetector based on Cu{sub 2}O/ZnO nanorods with poly-(N-vinylcarbazole) intermediate layer

    SciTech Connect

    Perng, Dung-Ching

    2015-12-14

    This study reports a high-performance hybrid ultraviolet (UV) photodetector with visible-blind sensitivity fabricated by inserting a poly-(N-vinylcarbazole) (PVK) intermediate layer between low-cost processed Cu{sub 2}O film and ZnO nanorods (NRs). The PVK layer acts as an electron-blocking/hole-transporting layer between the n-ZnO and p-Cu{sub 2}O films. The Cu{sub 2}O/PVK/ZnO NR photodetector exhibited a responsivity of 13.28 A/W at 360 nm, a high detectivity of 1.03 × 10{sup 13} Jones at a low bias of −0.1 V under a low UV light intensity of 24.9 μW/cm{sup 2}. The photo-to-dark current ratios of the photodetector with and without the PVK intermediate layer at a bias of −0.5 V are 1.34 × 10{sup 2} and 3.99, respectively. The UV-to-visible rejection ratios (R{sub 360 nm}/R{sub 450 nm}) are 350 and 1.735, respectively. Several features are demonstrated: (a) UV photo-generated holes at the ZnO NRs can effectively be transported through the PVK layer to the p-Cu{sub 2}O layer; (b) the insertion of a PVK buffer layer significantly minimizes the reverse-bias leakage current, which leads to a larger amplification of the photocurrent; and (c) the PVK buffer layer greatly improves the UV-to-visible responsivity ratio, allowing the device to achieve high UV detection sensitivity at a low bias voltage using a very low light intensity.

  18. Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric.

    PubMed

    Dalapati, G K; Chia, C K; Tan, C C; Tan, H R; Chiam, S Y; Dong, J R; Das, A; Chattopadhyay, S; Mahata, C; Maiti, C K; Chi, D Z

    2013-02-01

    High quality surface passivation on bulk-GaAs substrates and epitaxial-GaAs/Ge (epi-GaAs) layers were achieved by using atomic layer deposited (ALD) titanium aluminum oxide (TiAlO) alloy dielectric. The TiAlO alloy dielectric suppresses the formation of defective native oxide on GaAs layers. X-ray photoelectron spectroscopy (XPS) analysis shows interfacial arsenic oxide (As(x)O(y)) and elemental arsenic (As) were completely removed from the GaAs surface. Energy dispersive X-ray diffraction (EDX) analysis and secondary ion mass spectroscopy (SIMS) analysis showed that TiAlO dielectric is an effective barrier layer for reducing the out-diffusion of elemental atoms, enhancing the electrical properties of bulk-GaAs based metal-oxide-semiconductor (MOS) devices. Moreover, ALD TiAlO alloy dielectric on epi-GaAs with AlGaAs buffer layer realized smooth interface between epi-GaAs layers and TiAlO dielectric, yielding a high quality surface passivation on epi-GaAs layers, much sought-after for high-speed transistor applications on a silicon platform. Presence of a thin AlGaAs buffer layer between epi-GaAs and Ge substrates improved interface quality and gate dielectric quality through the reduction of interfacial layer formation (Ga(x)O(y)) and suppression of elemental out-diffusion (Ga and As). The AlGaAs buffer layer and TiAlO dielectric play a key role to suppress the roughening, interfacial layer formation, and impurity diffusion into the dielectric, which in turn largely enhances the electrical property of the epi-GaAs MOS devices. PMID:23331503

  19. Dependence of the surface topology and raman scattering spectra of Ge{sub x}Si{sub 1-x}/Si films on the composition variation over the layer thickness

    SciTech Connect

    Lunin, L. S.; Sysoev, I. A.; Bavizhev, M. D.; Lapin, V. A.; Kuleshov, D. S.; Malyavin, F. F.

    2013-05-15

    The surface topology and Raman scattering spectra of Ge{sub x}Si{sub 1-x}/Si(100) films are investigated in dependence of the composition variation over the film thickness. It is shown that the character of the Ge content variation in the Ge{sub x}Si{sub 1-x} alloy at the constant cumulative Ge fraction in the film (x{sub int} = 0.5) affects the surface morphology of the grown Ge{sub x}Si{sub 1-x}/Si layer. The heterostructures were grown by molecular-beam epitaxy.

  20. Effect of As Passivation on Vapor-Phase Epitaxial Growth of Ge on (211)Si as a Buffer Layer for CdTe Epitaxy

    NASA Astrophysics Data System (ADS)

    Shintri, Shashidhar; Rao, Sunil; Sarney, Wendy; Garg, Saurabh; Palosz, Witold; Trivedi, Sudhir; Wijewarnasuriya, Priyalal; Bhat, Ishwara

    2011-08-01

    We report an investigation of epitaxial germanium grown by chemical vapor deposition (CVD) on arsenic-terminated (211)Si, which is the preferred substrate in the USA for fabrication of night-vision devices based on mercury cadmium telluride (MCT) grown by molecular-beam epitaxy (MBE). The films were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), cross-sectional transmission electron microscopy (XTEM), and x-ray diffraction (XRD). Arsenic passivation was found to be effective in preventing cross-contamination of unwanted residual species present inside the reactor chamber and also in prolonging the evolution of layer-by-layer growth of Ge for significantly more monolayers than on nonpassivated Si. The two-dimensional (2D) to three-dimensional (3D) transition resulted in Ge islands, the density and morphology of which showed a clear distinction between passivated and nonpassivated (211)Si. Finally, thick Ge layers (˜250 nm) were grown at 525°C and 675°C with and without As passivation, where the layers grown with As passivation resulted in higher crystal quality and smooth surface morphology.

  1. Atomic layer deposition of crystalline SrHfO{sub 3} directly on Ge (001) for high-k dielectric applications

    SciTech Connect

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Hu, Chengqing; Jiang, Aiting; Yu, Edward T.; Lu, Sirong; Smith, David J.; Posadas, Agham; Demkov, Alexander A.

    2015-02-07

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO{sub 3} (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10{sup −5} A/cm{sup 2} at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D{sub it}) is estimated to be as low as ∼2 × 10{sup 12 }cm{sup −2 }eV{sup −1} under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D{sub it} value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.

  2. The properties of SiO 2 films using direct photo-chemical vapor deposition on strained SiGe layers

    NASA Astrophysics Data System (ADS)

    Lin, C. T.; Chang, S. J.; Nayak, D. K.; Shiraki, Y.

    1996-02-01

    Low temperature silicon-dioxide (SiO 2) layers were deposited on strained SiGe by using direct photo-chemical vapor deposition (DPCVD) with a deuterium lamp as the excitation source. It was found that the deposition rate increases linearly with the chamber pressure. The Auger electron spectroscopy profile shows that neither was Ge rejected nor was a Ge-rich layer formed after devices were fabricated. The capacitance-voltage ( C- V) measurements show that the flat-band voltage is about -1.1 V with an effective oxide charge of about 7 × 10 10 cm -2 and interface trap density of 3 × 10 11 cm -2 eV -1. At room temperature, the leakage current is about 3 × 10 -9 A/cm 2 under a 2 × 10 6 V/cm electric field. The breakdown field can reach over 16 MV/cm at 1 μA/cm 2 for these SiGe metal-oxide semiconductor (MOS) diodes.

  3. Design and fabrication of multi-layers infrared antireflection coating consisting of ZnS and Ge on ZnS substrate

    NASA Astrophysics Data System (ADS)

    Zarei Moghadam, R.; Ahmadvand, H.; Jannesari, M.

    2016-03-01

    We have designed, fabricated and characterized a multi-layers antireflection coating on multispectral ZnS substrate, suitable for the infrared range of 8-12 μm. The 4-layers coating (Ge/ZnS/Ge/ZnS) with optimized thicknesses was fabricated by PVD technique and studied by FTIR, nanoindentation and AFM. From FTIR spectroscopy it was found that, in the wavelength range of 8-12 μm, the average transmittance of the double-side coated sample increases by about 26% and its maximum reaches about 98%. To improve the mechanical hardness, a bilayer of Y2O3/carbon was deposited on the coating. Nanoindentation test shows that the coating enhances the mechanical properties. The final coating have successfully passed durability and environmental tests.

  4. Pseudomorphic GeSn/Ge (001) heterostructures

    SciTech Connect

    Tonkikh, A. A.; Talalaev, V. G.; Werner, P.

    2013-11-15

    The synthesis of pseudomorphic GeSn heterostructures on a Ge (001) substrate by molecular-beam epitaxy is described. Investigations by transmission electron microscopy show that the GeSn layers are defect free and possess cubic diamondlike structure. Photoluminescence spectroscopy reveals interband radiative recombination in the GeSn quantum wells, which is identified as indirect transitions between the subbands of heavy electrons and heavy holes. On the basis of experimental data and modeling of the band structure of pseudomorphic GeSn compounds, the lower boundary of the bowing parameter for the indirect band gap is estimated as b{sub L} {>=} 1.47 eV.

  5. Lanthanide Germanate Cluster Organic Frameworks Based on {Ln8Ge12} Clusters: From One-Dimensional Chains to Two-Dimensional Layers and Three-Dimensional Frameworks.

    PubMed

    Li, Lei-Lei; Cao, Gao-Juan; Zhao, Jun-Wei; He, Huan; Yang, Bai-Feng; Yang, Guo-Yu

    2016-06-01

    Under hydrothermal conditions, six series of novel lanthanide (Ln) organogermanates (LnGs) [Ln8Ge12(μ3-O)24E12(H2O)16]·14H2O (Ln(3+) = Pr(3+), 1; Nd(3+), 2; Sm(3+), 3; Eu(3+), 4; Gd(3+), 5; one-dimensional (1-D) LnG cluster organic chain (LnGCOC)), {[Nd8Ge12(μ3-O)24E12(H2O)10](μ2-H2O)2[Nd8Ge12(μ3-O)24E12(H2O)16]}·18H2O (6, two-dimensional (2-D) planar LnG cluster organic layer (LnGCOL)), {[Ln2GeE(HO)2O(H2O)(CH3COO)2(CO3)]2[Ln8Ge12E12(μ3-O)24(H2O)10]}·6H2O (Ln(3+) = Pr(3+), 7; Nd(3+), 8; 2-D wave-shaped LnGCOL), [TbGeE(HO)2O(H2O)(pca)]2[Tb8Ge12E12(μ3-O)24(H2O)8]·10H2O (9, three-dimensional (3-D) LnG cluster organic framework (LnGCOF)), {([Nd(pza)2(H2O)2]2[Nd8Ge12E12(μ3-O)24(H2O)12])([Nd(pza)2]2[Nd8Ge12E12(Hpza)2(μ3-O)24(H2O)10])}·4OH·14H2O (10, 3-D LnGCOF), {[Nd8Ge12E12(μ3-O)24(H2O)10][Nd(pca)(pda)(H2O)]2}·12H2O (11, 3-D LnGCOF) and {[Nd8Ge12E12(μ3-O)24(H2O)10][Nd(pza)(pda)(H2O)]2}·12H2O (12, 3-D LnGCOF) (Hpca = 2-picolinic acid, H2pda = 2,6-pyridinedicarboxylic acid, Hpza = 2-pyrazinecarboxylic acid) were prepared by introducing the second auxiliary ligands into the organogermanate-lanthanide-oxide reaction system. The obtainment of these LnGs realized the utilization of the second auxiliary ligands inducing the assembly from 1-D LnGCOCs to 2-D LnGCOLs and 3-D LnGCOFs based on LnG cluster (LnGC) {Ln8Ge12E12(μ3-O)24(H2O)16}({Ln8Ge12}) units and Ln-organic complexes or organic ligand connectors. It should be noted that the well-organized structural constructions of 1-12 can be visualized as the gradual replacement of active water sites located at equatorial and polar positions on the hypothetical [Ln8Ge12(μ3-O)24E12(H2O)18] LnGC core with oxygen or nitrogen atoms from organic ligands. The solid-state luminescent properties of 2, 3, 4, 6, and 8-12 have been investigated at room temperature. PMID:27216949

  6. Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-κ insulators

    NASA Astrophysics Data System (ADS)

    Zhang, Yan; Fischetti, M. V.; Sorée, B.; O'Regan, T.

    2010-12-01

    We present a comprehensive investigation of the low-field hole mobility in strained Ge and III-V (GaAs, GaSb, InSb, and In1-xGaxAs) p-channel inversion layers with both SiO2 and high-κ insulators. The valence (sub)band structure of Ge and III-V channels, relaxed and under biaxial strain (tensile and compressive) is calculated using an efficient self-consistent method based on the six-band k ṡp perturbation theory. The hole mobility is then computed using the Kubo-Greenwood formalism accounting for nonpolar hole-phonon scattering (acoustic and optical), surface roughness scattering, polar phonon scattering (III-Vs only), alloy scattering (alloys only) and remote phonon scattering, accounting for multisubband dielectric screening. As expected, we find that Ge and III-V semiconductors exhibit a mobility significantly larger than the "universal" Si mobility. This is true for MOS systems with either SiO2 or high-κ insulators, although the latter ones are found to degrade the hole mobility compared to SiO2 due to scattering with interfacial optical phonons. In addition, III-Vs are more sensitive to the interfacial optical phonons than Ge due to the existence of the substrate polar phonons. Strain—especially biaxial tensile stress for Ge and biaxial compressive stress for III-Vs (except for GaAs)—is found to have a significant beneficial effect with both SiO2 and HfO2. Among strained p-channels, InSb exhibits the largest mobility enhancement. In0.7Ga0.3As also exhibits an increased hole mobility compared to Si, although the enhancement is not as large. Finally, our theoretical results are favorably compared with available experimental data for a relaxed Ge p-channel with a HfO2 insulator.

  7. Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiCx:H Buffer Layer.

    PubMed

    Cemin, F; Bim, L T; Leidens, L M; Morales, M; Baumvol, I J R; Alvarez, F; Figueroa, C A

    2015-07-29

    Amorphous carbon (a-C) and several related materials (DLCs) may have ultralow friction coefficients that can be used for saving-energy applications. However, poor chemical bonding of a-C/DLC films on metallic alloys is expected, due to the stability of carbon-carbon bonds. Silicon-based intermediate layers are employed to enhance the adherence of a-C:H films on ferrous alloys, although the role of such buffer layers is not yet fully understood in chemical terms. The chemical bonding of a-C:H thin films on ferrous alloy intermediated by a nanometric SiCx:H buffer layer was analyzed by X-ray photoelectron spectroscopy (XPS). The chemical profile was inspected by glow discharge optical emission spectroscopy (GDOES), and the chemical structure was evaluated by Raman and Fourier transform infrared spectroscopy techniques. The nature of adhesion is discussed by analyzing the chemical bonding at the interfaces of the a-C:H/SiCx:H/ferrous alloy sandwich structure. The adhesion phenomenon is ascribed to specifically chemical bonding character at the buffer layer. Whereas carbon-carbon (C-C) and carbon-silicon (C-Si) bonds are formed at the outermost interface, the innermost interface is constituted mainly by silicon-iron (Si-Fe) bonds. The oxygen presence degrades the adhesion up to totally delaminate the a-C:H thin films. The SiCx:H deposition temperature determines the type of chemical bonding and the amount of oxygen contained in the buffer layer. PMID:26135943

  8. Atomic imaging and modeling of H{sub 2}O{sub 2}(g) surface passivation, functionalization, and atomic layer deposition nucleation on the Ge(100) surface

    SciTech Connect

    Kaufman-Osborn, Tobin; Chagarov, Evgueni A.; Kummel, Andrew C.

    2014-05-28

    Passivation, functionalization, and atomic layer deposition nucleation via H{sub 2}O{sub 2}(g) and trimethylaluminum (TMA) dosing was studied on the clean Ge(100) surface at the atomic level using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Chemical analysis of the surface was performed using x-ray photoelectron spectroscopy, while the bonding of the precursors to the substrate was modeled with density functional theory (DFT). At room temperature, a saturation dose of H{sub 2}O{sub 2}(g) produces a monolayer of a mixture of –OH or –O species bonded to the surface. STS confirms that H{sub 2}O{sub 2}(g) dosing eliminates half-filled dangling bonds on the clean Ge(100) surface. Saturation of the H{sub 2}O{sub 2}(g) dosed Ge(100) surface with TMA followed by a 200 °C anneal produces an ordered monolayer of thermally stable Ge–O–Al bonds. DFT models and STM simulations provide a consistent model of the bonding configuration of the H{sub 2}O{sub 2}(g) and TMA dosed surfaces. STS verifies the TMA/H{sub 2}O{sub 2}/Ge surface has an unpinned Fermi level with no states in the bandgap demonstrating the ability of a Ge–O–Al monolayer to serve as an ideal template for further high-k deposition.

  9. Ab initio geometry optimization and ground state properties of layered ternary carbides Ti3MC2 (M = Al, Si and Ge)

    NASA Astrophysics Data System (ADS)

    Zhou, Yanchun; Sun, Zhimei; Wang, Xiaohui; Chen, Shengqi

    2001-11-01

    The crystal structures of all layered ternary carbides called '312' phases including Ti3AlC2, Ti3SiC2 and Ti3GeC2 have been fully optimized by means of ab initio total-energy calculations. The equilibrium lattice parameters, the atomic positions in the unit cell and interatomic distances have been determined. The differences between the calculated and the measured lattice constants are generally less than 1%. It is also shown that c/a of the hexagonal lattices decreases from Ti3AlC2 to Ti3GeC2. The calculated bulk moduli are 190 GPa for Ti3AlC2, 202 GPa for Ti3SiC2 and 198 GPa for Ti3GeC2, respectively, which are comparable to that of TiC. The electronic structures reveal that the Ti(1, 2) and C atoms form a strong Ti(2)-C-Ti(1)-C-Ti(2) covalent bond chain, while the bonding between Ti(2) and M (M = Al, Si, Ge) is relatively weak. The strong Ti(2)-C-Ti(1)-C-Ti(2) covalent bond chain corresponds to the high strength and modulus, while the metallic bond corresponds to the metallic conductivity of these ternaries.

  10. High current density and high PVCR Si/Si 1-xGe x DQW RTD formed with quadruple-layer buffer

    NASA Astrophysics Data System (ADS)

    Maekawa, Hirotaka; Sano, Yoshihiro; Ueno, Chihiro; Suda, Yoshiyuki

    2007-04-01

    As a strain-relief relaxed Si 1-xGe x buffer that is used for type II band offset formation, we have proposed a quadruple-Si 1-xGe x-layer (QL) buffer where misfit dislocations are evenly distributed in the lower two interfaces and a buffer surface with good crystallinity was obtained. The crystallinity of the buffer surface does not degrade by high P doping with a P concentration of ˜10 19 cm -3 during the buffer growth. A vertical-type electron-tunneling Si/Si 1-xGe x resonant tunneling diode (RTD) formed with the highly P-doped QL buffer exhibits a high current density and a high peak-to-valley current ratio (PVCR) value. A planer-type electron-tunneling Si/ Si 1-xGe x RTD formed with the same buffer using tetramethyl ammonium hydroxide (TMAH) etching and polyimide insulator, which is better suited for device integration, also exhibits a high current density and a high PVCR value and good initial static performance reproducibility.

  11. Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

    NASA Technical Reports Server (NTRS)

    Ringel, S. A.; Carlin, J. A.; Andre, C. L.; Hudait, M. K.; Gonzalez, M.; Wilt, D. M.; Clark, E. B.; Jenkins, P.; Scheiman, D.; Allerman, A.

    2002-01-01

    Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

  12. Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

    SciTech Connect

    Cariou, R.; Ruggeri, R.; Tan, X.; Nassar, J.; Roca i Cabarrocas, P.; Mannino, Giovanni

    2014-07-15

    We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 10{sup 6} cm{sup −2} are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD.

  13. A Resultant Stress Effect of Contact Etching Stop Layer and Geometrical Designs of Poly Gate on Nanoscaled nMOSFETs with a Si1-xGe(x) Channel.

    PubMed

    Lee, Chang-Chun; Liu, Chuan-Hsi; Chen, Zih-Han; Tzeng, Tzai-Liang

    2015-03-01

    In this research, an n-type metal-oxide-semiconductor field effect transistor (nMOSFET) device with a SiGe channel exerted by the combination of a contact etching stop layer (CESL) and silicon germanium (Si1-xGe(x)) channel stressors is proposed. To explore the foregoing mechanical effect on the stress distribution of nMOSFETs within the channel region, a process-oriented simulated technique is adopted for the concerned nMOSFET device. The loading sources are a 1.1 GPa tensile CESL (t-CESL) and a SiGe channel structure constructed with 0%, 22.5%, and 25%, germanium (Ge) mole fractions. The results of the simulation show that the stress components of the Si1-xGe(x) channel evidently increase when the Ge mole fraction within a Si1-xGe(x) layer is increased. A pulling force exerted on the protruding gate structure by the CESL layer that causes dominant bending deformation and channel stress variation behaviors is a major reason for this phenomenon. Therefore, the degree of bending effect caused by the protruding gate structure is concluded as being the key to determining the trends and stress magnitudes of the Si1-xGe(x) device channel. PMID:26413636

  14. High efficiency Cu(In,Ga)Se{sub 2} thin film solar cells without intermediate buffer layers

    SciTech Connect

    Ramanathan, K.; Wiesner, H.; Asher, S.; Niles, D.; Bhattacharya, R.N.; Keane, J.; Contreras, M.A.; Noufi, R.

    1998-09-01

    The nature of the interface between CuInGaSe{sub 2} (CIGS) and the chemical bath deposited CdS layer has been investigated. The authors show that heat-treating the absorbers in Cd- or Zn-containing solutions in the presence of ammonium hydroxide sets up an interfacial reaction with the possibility of an ion exchange occurring between Cd and Cu. The characteristics of devices made in this manner suggest that the reaction generates a thin, n-doped region in the absorber. The authors suggest that this aspect might be more important than the CdS layer in the formation of the junction. It is quite possible that the CdS/CuInSe{sub 2} device is a buried, shallow junction with a CdS window layer, rather than a heterojunction between CdS and CIGS. The authors use these ideas to develop methods for fabricating diodes without CdS or Cd.

  15. Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset

    SciTech Connect

    Brehm, Moritz; Grydlik, Martyna; Lichtenberger, Herbert; Hrauda, Nina; Fromherz, Thomas; Schaeffler, Friedrich; Bauer, Guenther; Montalenti, Francesco; Vastola, Guglielmo; Miglio, Leo; Beck, Matthew J.

    2009-11-15

    The commonly accepted Stranski-Krastanow model, according to which island formation occurs on top of a wetting layer (WL) of a certain thickness, predicts for the morphological evolution an increasing island aspect ratio with volume. We report on an apparent violation of this thermodynamic understanding of island growth with deposition. In order to investigate the actual onset of three-dimensional islanding and the critical WL thickness in the Ge/Si(001) system, a key issue is controlling the Ge deposition with extremely high resolution [0.025 monolayer (ML)]. Atomic force microscopy and photoluminescence measurements on samples covering the deposition range 1.75-6.1 ML, taken along a Ge deposition gradient on 4 in. Si substrates and at different growth temperatures (T{sub g}), surprisingly reveal that for T{sub g}>675 deg. C steeper multifaceted domes apparently nucleate prior to shallow (105)-faceted pyramids, in a narrow commonly overlooked deposition range. The puzzling experimental findings are explained by a quantitative modeling of the total energy with deposition. We accurately matched ab initio calculations of layer and surface energies to finite-element method simulations of the elastic energy in islands, in order to compare the thermodynamic stability of different island shapes with respect to an increasing WL thickness. Close agreement between modeling and experiments is found, pointing out that the sizeable progressive lowering of the surface energy in the first few MLs of the WL reverts the common understanding of the SK growth onset. Strong similarities between islanding in SiGe and III/V systems are highlighted.

  16. Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H2O2(g) and trimethylaluminum dosing

    NASA Astrophysics Data System (ADS)

    Kaufman-Osborn, Tobin; Chagarov, Evgueni A.; Park, Sang Wook; Sahu, Bhagawan; Siddiqui, Shariq; Kummel, Andrew C.

    2014-12-01

    Passivation, functionalization, and atomic layer deposition (ALD) via H2O2(g) and trimethylaluminum (TMA) dosing were studied on the clean Si0.6Ge0.4(001) surface at the atomic level using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Chemical analysis of the surface was performed with in-situ X-ray photoelectron spectroscopy (XPS) while density functional theory (DFT) was employed to model the bonding of H2O2(g) chemisorbates to the substrate. A room temperature saturation dose of H2O2(g) covers the surface with a monolayer of sbnd OH and sbnd O chemisorbates. XPS and DFT demonstrate that the room temperature H2O2/SiGe surface is composed of only Gesbnd OH and Gesbnd O bonds while annealing induces an atomic layer exchange bringing Si to the surface to bond with sbnd OH or sbnd O while pushing Ge subsurface. The resulting Sisbnd OH and Sisbnd O surface is optimal because it can be used to nucleate high-k ALD and Si dangling bonds are readily passivated by forming gas. After H2O2(g) functionalization, TMA dosing, and a subsequent 230 °C anneal, ordering along the dimer row direction is observed on the surface. STS verifies that the TMA/H2O2/SiGe surface has an unpinned Fermi level with no states in the band gap demonstrating the ability to serve as an ideal template for further high-k deposition.

  17. HfO2 gate dielectric on Ge (1 1 1) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

    NASA Astrophysics Data System (ADS)

    Agrawal, Khushabu S.; Patil, Vilas S.; Khairnar, Anil G.; Mahajan, Ashok M.

    2016-02-01

    Interfacial properties of the ALD deposited HfO2 over the surface nitrided germanium substrate have been studied. The formation of GeON (∼1.7 nm) was confirmed by X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron spectroscopy (HRTEM) over the germanium surface. The effect of post deposition annealing temperature was investigated to study the interfacial and electrical properties of hafnium oxide/germanium oxynitride gate stacks. The high-k MOS devices with ultrathin GeON layer shows the good electrical characteristics including higher k value ∼18, smaller equivalent oxide thickness (EOT) around 1.5 nm and smaller hysteresis value less than 170 mV. The Qeff and Dit values are somewhat greater due to the (1 1 1) orientation of the germanium and may be due to the presence of nitrogen at the interface. The Fowler-Northeim (FN) tunneling of Ge MOS devices has been studied. The barrier height ΦB extracted from the plot is ∼1 eV.

  18. Performance of (La,Sr)(Co,Fe)O 3- x double-layer cathode films for intermediate temperature solid oxide fuel cell

    NASA Astrophysics Data System (ADS)

    Marinha, D.; Hayd, J.; Dessemond, L.; Ivers-Tiffée, E.; Djurado, E.

    In this study the performance evaluation of (La,Sr)(Co,Fe)O 3- x (LSCF) double-layer films characterized by impedance spectroscopy between 403 and 603 °C to be used for intermediate temperature solid oxide fuel cells (IT-SOFCs) is presented. Two LSCF layers with different microstructures were sequentially deposited onto Ce 0.9Gd 0.1O 1.95 (CGO) substrates in a symmetrical fashion. A first layer of La 0.6Sr 0.4Co 0.2Fe 0.8O 3- x with a thickness of 7 μm and a nano-scaled particle size was deposited by electrostatic spray deposition (ESD) technique. Different deposition conditions were used in preparing the ESD films to evaluate the influence of film morphology on the electrochemical performance. After annealing, a current collector layer of La 0.58Sr 0.4Co 0.2Fe 0.8O 3- x with ∼45 μm in thickness and a larger particle size was deposited by screen printing. Area specific resistances (ASRs) were determined from impedance spectroscopy measurements performed in air between 403 and 603 °C, at 25 °C steps. A dependence of electrochemical performance on the morphology of the LSCF layer deposited by ESD was observed. The lowest ASR, measured during 130 h of isothermal dwelling at 603 °C, averaged 0.13 Ω cm 2 with negligible variation and is the lowest reported value for this composition, to the best of our knowledge. Reported results assure an excellent suitability of this type of assembly for IT-SOFCs.

  19. Cobalt based layered perovskites as cathode material for intermediate temperature Solid Oxide Fuel Cells: A brief review

    NASA Astrophysics Data System (ADS)

    Pelosato, Renato; Cordaro, Giulio; Stucchi, Davide; Cristiani, Cinzia; Dotelli, Giovanni

    2015-12-01

    Nowadays, the cathode is the most studied component in Intermediate Temperature-Solid Oxide Fuel Cells (IT-SOFCs). Decreasing SOFCs operating temperature implies slow oxygen reduction kinetics and large polarization losses. Double perovskites with general formula REBaCo2O5+δ are promising mixed ionic-electronic conductors, offering a remarkable enhancement of the oxygen diffusivity and surface exchange respect to disordered perovskites. In this review, more than 250 compositions investigated in the literature were analyzed. The evaluation was performed in terms of electrical conductivity, Area Specific Resistance (ASR), chemical compatibility with electrolytes and Thermal Expansion Coefficient (TEC). The most promising materials have been identified as those bearing the mid-sized rare earths (Pr, Nd, Sm, Gd). Doping strategies have been analyzed: Sr doping on A site promotes higher electrical conductivity, but worsen ASR and TECs; B-site doping (Fe, Ni, Mn) helps lowering TECs, but is detrimental for the electrochemical properties. A promising boost of the electrochemical activity is obtained by simply introducing a slight Ba under-stoichiometry. Still, the high sensitivity of the electrochemical properties against slight changes in the stoichiometry hamper a conclusive comparison of all the investigated compounds. Opportunities for an improvement of double perovskite cathodes performance is tentatively foreseen in combining together the diverse effective doping strategies.

  20. Syntheses, structural variants and characterization of AInM‧S4 (A=alkali metals, Tl; M‧ = Ge, Sn) compounds; facile ion-exchange reactions of layered NaInSnS4 and KInSnS4 compounds

    NASA Astrophysics Data System (ADS)

    Yohannan, Jinu P.; Vidyasagar, Kanamaluru

    2016-06-01

    Ten AInM‧S4 (A=alkali metals, Tl; M‧= Ge, Sn) compounds with diverse structure types have been synthesized and characterized by single crystal and powder X-ray diffraction and a variety of spectroscopic methods. They are wide band gap semiconductors. KInGeS4(1-β), RbInGeS4(2), CsInGeS4(3-β), TlInGeS4(4-β), RbInSnS4(8-β) and CsInSnS4(9) compounds with three-dimensional BaGa2S4 structure and CsInGeS4(3-α) and TlInGeS4(4-α) compounds with a layered TlInSiS4 structure have tetrahedral [InM‧S4]- frameworks. On the other hand, LiInSnS4(5) with spinel structure and NaInSnS4(6), KInSnS4(7), RbInSnS4(8-α) and TlInSnS4(10) compounds with layered structure have octahedral [InM‧S4]- frameworks. NaInSnS4(6) and KInSnS4(7) compounds undergo facile topotactic ion-exchange, at room temperature, with various mono-, di- and tri-valent cations in aqueous medium to give rise to metastable layered phases.

  1. Vertical distribution and diel migration of macrozooplankton in the St. Lawrence marine system (Canada) in relation with the cold intermediate layer thermal properties

    NASA Astrophysics Data System (ADS)

    Harvey, Michel; Galbraith, Peter S.; Descroix, Aurélie

    2009-01-01

    Vertical distribution of various species and stages of macrozooplankton (euphausiacea, chaetognatha, cnidaria, mysidacea, amphipoda) were determined for different times of the day and related to the physical environment. Stratified sampling with the BIONESS was carried out during seven cruises in spring and fall 1998, 2000, and 2001, and fall 1999, in two different habitats in the St. Lawrence marine system: the lower St. Lawrence Estuary and the NW Gulf of St. Lawrence. Our results indicate that the various macrozooplankton species were distributed throughout the whole water column including the surface layer, the cold intermediate layer (CIL), and the deep layer at different times of day and night in both areas during all periods. Moreover, three types of migrational patterns were observed within this zooplanktonic community: (1) nocturnal ascent by the whole population, (2) segregation into two groups; one which performed nocturnal accent and another which remained in the deep, and (3) no detectable migration. We also observed that the diel vertical migration (DVM) amplitude in most of the macrozooplankton species varied as a function of physical factors, in particular the spatio-temporal variations of the CIL thermal properties, including the upper and the lower limits of the CIL and the depth of the CIL core temperature. Finally, the different DVM patterns coupled with estuarine circulation patterns and bottom topography could place animals in different flow regimes by night and by day and contribute to their retention (aggregation) and/or dispersion in different areas, time of the day, and seasons.

  2. Performance enhancement of a plasmonic structure comprising of indium oxide-zirconium dioxide-silver-zinc oxide intermediate layers working in visible and infrared wavelength region

    NASA Astrophysics Data System (ADS)

    Brahmachari, Kaushik; Ray, Mina

    2016-07-01

    Modeling of a fused silica (SiO2) glass prism-based plasmonic structure comprising of indium oxide (In2O3)-zirconium dioxide (ZrO2)-silver (Ag)-zinc oxide (ZnO) intermediate layers showing enhancement in sensitivity and figure-of-merit (FOM) in visible and infrared regime has been reported in this paper. Performance of the proposed plasmonic structure has been demonstrated in terms of sensitivity, half width (HW), detection accuracy (DA), and FOM parameters in visible (632.8 nm) and infrared (1200 nm) wavelength of light. High sensitivity of fused silica glass material, In2O3, ZnO films along with high DA and high FOM of Ag and inclusion of ZrO2 as an oxidation protective layer in between In2O3 and Ag have been the most exciting and advantageous features of our proposed structure. Simulated sensitivity values of our proposed structure were found to be 73.8 deg/RIU at 632.8 nm wavelength and it was found enhanced to 109.6 deg/RIU at 1200 nm wavelength and simulated FOM values were also found enhanced from 23.3544 RIU-1 at 632.8 nm to 62.6285 RIU-1 at 1200 nm wavelength for change in sensing layer refractive indices from 1.30 RIU to 1.35 RIU.

  3. Effect of intermediate fiber layer on the fracture load and failure mode of maxillary incisors restored with laminate veneers.

    PubMed

    Turkaslan, Suha; Tezvergil-Mutluay, Arzu; Bagis, Bora; Shinya, Akikazu; Vallittu, Pekka K; Lassila, Lippo V

    2008-01-01

    This study evaluated the fracture load and failure mode of various veneer materials cemented with or without the addition of a fiber-reinforced composite (FRC) layer at the adhesive interface. Sixty intact incisors were randomly divided into three groups. Group 1 was fabricated with the heat-press technique (IPS Empress 2); Group 2 with the copy milling technique (ZirkonZahn); and Group 3 with the direct or indirect composite technique (Z250)--and specimens were cemented either with or without FRC at the adhesive interface. The specimens were thermocycled and tested with a universal testing machine. No significant differences in fracture load (p>0.05) were found among the various veneer materials. The addition of FRC at the adhesive layer did not lead to significant differences in the fracture load (p>0.05) but resulted in differences in the failure mode. Laminate veneers made of composite, zirconia, and Empress 2 showed comparable mean fracture loads. However, the use of FRC at the interface changed their failure modes. PMID:18309613

  4. Intermediate and high resolution numerical simulations of the transition of a tropical wave critical layer to a tropical storm

    NASA Astrophysics Data System (ADS)

    Montgomery, M. T.; Wang, Z.; Dunkerton, T. J.

    2009-12-01

    Recent work has hypothesized that tropical cyclones in the deep Atlantic and eastern Pacific basins develop from the cyclonic Kelvin cat's eye of a tropical easterly wave critical layer located equatorward of the easterly jet axis that typifies the trade wind belt. The cyclonic critical layer is thought to be important to tropical cyclogenesis because its cat's eye provides (i) a region of cyclonic vorticity and weak deformation by the resolved flow, (ii) containment of moisture entrained by the developing flow and/or lofted by deep convection therein, (iii) confinement of mesoscale vortex aggregation, (iv) a predominantly convective type of heating profile, and (v) maintenance or enhancement of the parent wave until the developing proto-vortex becomes a self-sustaining entity and emerges from the wave as a tropical depression. This genesis sequence and the overarching framework for describing how such hybrid wave-vortex structures become tropical depressions/storms is likened to the development of a marsupial infant in its mother's pouch, and for this reason has been dubbed the "marsupial paradigm". Here we conduct the first multi-scale test of the marsupial paradigm in an idealized setting by revisiting the problem of the transformation of an easterly wave-like disturbance into a tropical storm vortex using the WRF model. An analysis of the evolving winds, equivalent potential temperature, and relative vertical vorticity is presented from coarse (28 km) and high resolution (3.1 km) simulations. The results are found to support key elements of the marsupial paradigm by demonstrating the existence of a vorticity dominant region with minimal strain/shear deformation within the critical layer pouch that contains strong cyclonic vorticity and high saturation fraction. This localized region within the pouch serves as the "attractor" for an upscale "bottom up" development process while the wave pouch and proto-vortex move together. Implications of these findings are

  5. Azimuthal Anisotropy at Intermediate Rapidity in √SNN = 200 GeV Au-Au Collisions in PHENIX at RHIC-BNL

    NASA Astrophysics Data System (ADS)

    Norman, Benjamin

    2005-04-01

    In mid-central heavy ion collisions, the nuclear overlap region is almond shaped. This spatial anisotropy leads to a momentum space anisotropy, which has symmetry about the plane defined by the beam axis and the impact parameter. This reaction plane (or event plane) can be determined in experiment using the final particle azimuthal distribution. The reaction plane resolution depends on particle multiplicity, azimuthal angle resolution, azimuthal hermeticity, and the amount of actual asymmetry that exists in the collision. We will present the effect of these factors on the resolution of the reaction plane for Au-Au collisions in general and more specifically for the pad planes of the PHENIX Multiplicity Vertex Detector (MVD). These pad planes are in the pseudorapidity range 1.8 < |eta| < 2.6 on either side of the vertex region for which PHOBOS data (nucl-ex/0403025) suggest a v2 of about 4 percent for mid-central Au-Au collisions at √SNN of 200 GeV.

  6. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    SciTech Connect

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  7. Laser-induced nondestructive patterning of a thin ferroelectric polymer film with controlled crystals using Ge8Sb2Te11 alloy layer for nonvolatile memory.

    PubMed

    Bae, Insung; Kim, Richard Hahnkee; Hwang, Sun Kak; Kang, Seok Ju; Park, Cheolmin

    2014-09-10

    We present a simple but robust nondestructive process for fabricating micropatterns of thin ferroelectric polymer films with controlled crystals. Our method is based on utilization of localized heat arising from thin Ge(8)Sb(2)Te(11) (GST) alloy layer upon exposure of 650 nm laser. The heat was generated on GST layer within a few hundred of nanosecond exposure and subsequently transferred to a thin poly(vinylidene fluoride-co-trifluoroethylene) film deposited on GST layer. By controlling exposure time and power of the scanned laser, ferroelectric patterns of one or two microns in size are fabricated with various shape. In the micropatterned regions, ferroelectric polymer crystals were efficiently controlled in both degree of the crystallinity and the molecular orientations. Nonvolatile memory devices with laser scanned ferroelectric polymer layers exhibited excellent device performance of large remnant polarization, ON/OFF current ratio and data retention. The results are comparable with devices containing ferroelectric films thermally annealed at least for 2 h, making our process extremely efficient for saving time. Furthermore, our approach can be conveniently combined with a number of other functional organic materials for the future electronic applications. PMID:25127181

  8. Variability of GeV gamma-ray emission in QSO B0218+357 due to microlensing on intermediate size structures

    NASA Astrophysics Data System (ADS)

    Sitarek, J.; Bednarek, W.

    2016-06-01

    Strong gravitational lensing leads to an occurrence of multiple images, with different magnifications, of a lensed source. Those magnifications can in turn be modified by microlensing on smaller mass scales within the lens. Recently, measurements of the changes in the magnification ratio of the individual images have been proposed as a powerful tool for estimation of the size and velocity of the emission region in the lensed source. The changes of the magnification ratios in blazars PKS1830-211 and QSO B0218+357, if interpreted as caused by a microlensing on individual stars, put strong constraints on those two variables. These constraints are difficult to accommodate with the current models of gamma-ray emission in blazars. In this paper we study if similar changes in the magnification ratio can be caused by microlensing on intermediate size structures in the lensing galaxy. We investigate in details three classes of possible lenses: globular clusters (GCs), open clusters (OCs) and giant molecular clouds (GMCs). We apply this scenario to the case of QSO B0218+357. Our numerical simulations show that changes in magnifications with similar time-scales can be obtained for relativistically moving emission regions with sizes up to 0.01 pc in the case of microlensing on the cores of GCs or clumps in GMCs. From the density of such structures in spiral galaxies we estimate however that lensing in GMCs would be more common.

  9. An unusual phenomenon of surface reaction observed during Ge overgrowth on Mn5Ge3/Ge(111) heterostructures

    NASA Astrophysics Data System (ADS)

    Dau, Minh-Tuan; Le Thanh, Vinh; Michez, Lisa A.; Petit, Matthieu; Le, Thi-Giang; Abbes, Omar; Spiesser, Aurélie; Ranguis, Alain

    2012-10-01

    The Mn5Ge3 compound, thanks to its room-temperature ferromagnetism, metallic character and ability to epitaxially grow on germanium, acts as a potential candidate for spin injection into group-IV semiconductors. Understanding and controlling Ge overgrowth behaviour on Mn5Ge3/Ge heterostructures represents a crucial step to realize Ge/Mn5Ge3/Ge multilayers for numerous spintronic applications. Here, we have combined structural and morphological characterizations with magnetic analyses to study the mechanisms of Ge overgrowth on epitaxial Mn5Ge3 layers in the temperature range of 450-550 °C. It is found that deposited Ge instantly reacts with Mn to form a Mn5Ge3 surface layer, which, acting as a surfactant, continuously floats upwards from the growing surface to a distance larger than 70 nm. New Ge layers are successively formed underneath, allowing such a floating Mn5Ge3 surface layer to be stabilized by epitaxy. These observations can be considered as a typical example in which the stabilization of metastable thin films by epitaxy can overcome thermodynamic equilibrium. We have also investigated the effect of carbon adsorption on the top of the Mn5Ge3 layer prior to Ge deposition to control the Mn:Ge reaction. It is shown that adsorbed carbon effectively reduces the out-diffusion of Mn from Mn5Ge3, allowing Ge layers to stack up on top of Mn5Ge3. However, at temperatures of 450-550 °C, carbon may react with Mn to form manganese carbides and the resulting Ge overlayers are found to change their orientation from the (111) plane to the (001) plane, which has a higher surface energy. Finally, a strategy to realize Ge/Mn5Ge3/Ge multilayers will be addressed.

  10. Bacterial processes in the intermediate and deep layers of the Ionian Sea in winter 1999: Vertical profiles and their relationship to the different water masses

    NASA Astrophysics Data System (ADS)

    Zaccone, R.; Monticelli, L. S.; Seritti, A.; Santinelli, C.; Azzaro, M.; Boldrin, A.; La Ferla, R.; Ribera D'Alcalã, M.

    2003-09-01

    Dissolved and particulate organic carbon, bacterial biomass, microbial enzymatic activities (EEA: leucine aminopeptidase, β-glucosidase, and alkaline phosphatase), bacterial production, respiration rates, and bacterial growth efficiency were determined in 10 stations of the Ionian Sea (winter 1998-1999) with the aim of characterizing the recycling of biogenic carbon and phosphorus in the different water masses, previously identified on the basis of their hydrographical properties. All microbial activities decreased markedly with depth, with a sharp increase in the benthic boundary layer, where potential remineralization rates of phosphorus up to 1.03 μg P·dm-3d-1 and bacterial carbon production of 0.078 μg C·dm-3 d-1 were recorded. Those rates were close to the surface ones; the bacterial growth efficiency was also around 20%, similar to the surface value, sustaining the microbial food chain at the bottom. The daily hydrolysis of the organic carbon pool estimated by EEA varied from 0.67% (Ionian Surface Water) to 0.02% (Deep Water). Alkaline phosphatase activity was generally low in the intermediate and deep layers, in relation to the higher inorganic P content. The last facts support the hypothesis that deep waters of Ionian Sea, and in general of the entire Mediterranean basin, because of their young age, carry a larger amount of labile dissolved organic carbon, which reduces the need for a high recycling activity by bacterial community. As a matter of fact, a relatively higher activity per cell in carbon production rates was found in the deep layer where a large volume of the very recently formed Cretan Sea Outflow Water was present.