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Sample records for germanium thin films

  1. Hydrogenated nanocrystalline silicon germanium thin films

    NASA Astrophysics Data System (ADS)

    Yusoff, A. R. M.; Syahrul, M. N.; Henkel, K.

    2007-08-01

    Hydrogenated nanocrystalline silicon germanium thin films (nc-SiGe:H) is an interesting alternative material to replace hydrogenated nanocrystalline silicon (nc-Si:H) as the narrow bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc-Si) triple-junction solar cell due to its higher optical absorption in the wavelength range of interest. In this paper, we present results of optical, structural investigations and electrical characterization of nc-SiGe:H thin films made by hot-wire chemical vapor deposition (HWCVD) with a coil-shaped tungsten filament and with a disilane/germane/hydrogen gas mixture. The optical band gaps of a-SiGe:H and nc-SiGe:H thin-films, which are deposited with the same disilane/germane/hydrogen gas mixture ratio of 3.4:1.7:7, are about 1.58 eV and 2.1 eV, respectively. The nc-SiGe:H thin film exhibits a larger optical absorption coefficient of about 2-4 in the 600-900 nm range when compared to nc-Si:H thin film. Therefore, a thinner nc-SiGe:H layer of sim500 nm thickness may be sufficient for the narrow bandgap absorber in an a-Si based multiple-junction solar cell. We enhanced the transport properties as measured by the photoconductivity frequency mixing technique. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale as measured by small-angle X-ray scattering. Decreasing both the filament temperature and substrate temperature produced a film with relatively low structural heterogeneity while photoluminescence showed an order of magnitude increase in defect density for a similar change in the process.

  2. Germanium Lift-Off Masks for Thin Metal Film Patterning

    NASA Technical Reports Server (NTRS)

    Brown, Ari

    2012-01-01

    A technique has been developed for patterning thin metallic films that are, in turn, used to fabricate microelectronics circuitry and thin-film sensors. The technique uses germanium thin films as lift-off masks. This requires development of a technique to strip or undercut the germanium chemically without affecting the deposited metal. Unlike in the case of conventional polymeric lift-off masks, the substrate can be exposed to very high temperatures during processing (sputter deposition). The reason why polymeric liftoff masks cannot be exposed to very high temperatures (greater than 100 C) is because (a) they can become cross linked, making lift-off very difficult if not impossible, and (b) they can outgas nitrogen and oxygen, which then can react with the metal being deposited. Consequently, this innovation is expected to find use in the fabrication of transition edge sensors and microwave kinetic inductance detectors, which use thin superconducting films deposited at high temperature as their sensing elements. Transition edge sensors, microwave kinetic inductance detectors, and their circuitry are comprised of superconducting thin films, for example Nb and TiN. Reactive ion etching can be used to pattern these films; however, reactive ion etching also damages the underlying substrate, which is unwanted in many instances. Polymeric lift-off techniques permit thin-film patterning without any substrate damage, but they are difficult to remove and the polymer can outgas during thin-film deposition. The outgassed material can then react with the film with the consequence of altered and non-reproducible materials properties, which, in turn, is deleterious for sensors and their circuitry. The purpose of this innovation was to fabricate a germanium lift-off mask to be used for patterning thin metal films.

  3. Deposition and characterizations of ultrasmooth silver thin films assisted with a germanium wetting layer

    NASA Astrophysics Data System (ADS)

    Zhang, Junce; Fryauf, David M.; Diaz Leon, Juan J.; Garrett, Matthew; VJ, Logeeswaran; Islam, Saif M.; Kobayashi, Nobuhiko P.

    2015-08-01

    In this paper, silver thin films deposited on SiO2 substrates with a germanium wetting layer fabricated by electron-beam evaporation were studied. The characterization methods of XTEM, FTIR, XRD and XRR were used to study the structural properties of silver thin films with various thicknesses of germanium layers. Silver films deposited with very thin (1-5nm) germanium wetting layers show about one half of improvement in the crystallite sizes comparing silver films without germanium layer. The surface roughness of silver thin films significantly decrease with a thin germanium wetting layer, reaching a roughness minimum around 1-5nm of germanium, but as the germanium layer thickness increases, the silver thin film surface roughness increases. The relatively higher surface energy of germanium and bond dissociation energy of silver-germanium were introduced to explain the effects the germanium layer made to the silver film deposition. However, due to the Stranski-Krastanov growth mode of germanium layer, germanium island formation started with increased thickness (5-15nm), which leads to a rougher surface of silver films. The demonstrated silver thin films are very promising for large-scale applications as molecular anchors, optical metamaterials, plasmonic devices, and several areas of nanophotonics.

  4. Optical Properties of Nanoporous Germanium Thin Films.

    PubMed

    Cavalcoli, Daniela; Impellizzeri, Giuliana; Romano, Lucia; Miritello, Maria; Grimaldi, Maria Grazia; Fraboni, Beatrice

    2015-08-12

    In the present article we report enhanced light absorption, tunable size-dependent blue shift, and efficient electron-hole pairs generation in Ge nanoporous films (np-Ge) grown on Si. The Ge films are grown by sputtering and molecular beam epitaxy; subsequently, the nanoporous structure is obtained by Ge+ self-implantation. We show, by surface photovoltage spectroscopy measurements, blue shift of the optical energy gap and strong signal enhancement effects in the np-Ge films. The blue shift is related to quantum confinement effects at the wall separating the pore in the structure, the signal enhancement to multiple light-scattering events, which result in enhanced absorption. All these characteristics are highly stable with time. These findings demonstrate that nanoporous Ge films can be very promising for photovoltaic applications. PMID:26177652

  5. Submicron fabrication by local anodic oxidation of germanium thin films

    NASA Astrophysics Data System (ADS)

    Oliveira, A. B.; Medeiros-Ribeiro, G.; Azevedo, A.

    2009-08-01

    Here we describe a lithography scheme based on the local anodic oxidation of germanium film by a scanning atomic force microscope in a humidity-controlled atmosphere. The oxidation kinetics of the Ge film were investigated by a tapping mode, in which a pulsed bias voltage was synchronized and applied with the resonance frequency of the cantilever, and by a contact mode, in which a continuous voltage was applied. In the tapping mode we clearly identified two regimes of oxidation as a function of the applied voltage: the trench width increased linearly during the vertical growth and increased exponentially during the lateral growth. Both regimes of growth were interpreted taking into consideration the Cabrera-Mott mechanism of oxidation applied to the oxide/Ge interface. We also show the feasibility of the bottom-up fabrication process presented in this work by showing a Cu nanowire fabricated on top of a silicon substrate.

  6. Germanium and Silicon Nanocrystal Thin-Film Field-Effect Transistors from Solution

    SciTech Connect

    Holman, Zachary C.; Liu, Chin-Yi; Kortshagen, Uwe R.

    2010-07-09

    Germanium and silicon have lagged behind more popular II-VI and IV-VI semiconductor materials in the emerging field of semiconductor nanocrystal thin film devices. We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films. Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0.02 and 0.006 cm2 V-1 s-1, respectively. Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology.

  7. Preparation and characterization of hydrogenated amorphous germanium and hydrogenated amorphous germanium carbide thin films

    NASA Astrophysics Data System (ADS)

    Wu, Hai-Sheng

    1989-02-01

    Hydrogenated amorphous germanium (a-Ge:H) and germanium carbide (a-Ge(1-x)Cx:H) films were prepared by rf sputtering of a polycrystalline Ge target in a vacuum approximately 4 x 10 to the 7th Torr at various rf power 50 less than or equal to P less than or equal to 600 W (0.27 to 3.3 W/sq cm), target-substrate distance 1 less than or equal to d less than or equal to 7 minutes, varying partial pressures of Ar, H2, and C3H8, and flow rates f. The vibrational and opto-electronic properties such as infrared (IR) absorption, optical gap, electron-spin-resonance (ESR) signals, and conductivities vary with deposition conditions. The photoconductivity sigma sub ph, in particular, was carefully monitored as a function of the deposition conditions to optimize it.

  8. Preparation and characterization of hydrogenated amorphous germanium and hydrogenated amorphous germanium-carbide thin films

    SciTech Connect

    Wu, H.S.

    1988-01-01

    Hydrogenated amorphous germanium (a-Ge:H) and germanium carbide (a-Ge{sub 1{minus}x}C{sub x}:H) films were prepared by rf sputtering of a polycrystalline Ge target in a vacuum {approximately}4 {times} 10{sup {minus}7} Torr at various rf power, target-substrate distance, varying partial pressures of Ar, H{sub 2}, and C{sub 3}H{sub 8}, and flow rates. The vibrational and opto-electronic properties such as infrared (IR) absorption, optical gap, electron-spin-resonance (ESR) signals, and conductivities vary with deposition conditions. The photoconductivity, in particular, was carefully monitored as a function of the deposition conditions to optimize it. The concentration of Ge-H bonds and the optical gap generally decrease as P is increased. Results of annealing showed the enhanced segregation effect of Ge-C bonds {ge} 300{degree}C. The evolution of bonded hydrogen with temperature is studied. Deposition rates of a-Ge:H films are estimated and compared. The thermalization curve for a Ge target is constructed. Deposition rate was found to decrease exponentially with increasing target-substrate distances to decrease with increasing partial pressures of H{sub 2} and C{sub 3}H{sub 8} and increasing flow rates. Hydrogen incorporation markedly increased photoconductivity.

  9. Preparation and characterization of hydrogenated amorphous germanium and hydrogenated amorphous germanium carbide thin films

    SciTech Connect

    Wu, Hai-Sheng

    1989-02-01

    Hydrogenated amorphous germanium (a-Ge:H) and germanium carbide (a-Ge/sub 1-x/C/sub x/:H) films were prepared by rf sputtering of a polycrystalline Ge target in a vacuum /approximately/ 4 /times/ 10/sup /minus/7/ Torr at various rf power 50 less than or equal to P less than or equal to 600 W (0. 27-3.3 W/cm/sup 2/), target-substrate distance 1 less than or equal to d less than or equal to 7'', varying partial pressures of Ar, H/sub 2/, and C/sub 3/H/sub 8/, and flow rates f. The vibrational and opto-electronic properties such as infrared (IR) absorption, optical gap, electron-spin-resonance (ESR) signals, and conductivities vary with deposition conditions. The photoconductivity sigma/sub ph/, in particular, was carefully monitored as a function of the deposition conditions to optimize it. 96 refs., 49 figs., 7 tabs.

  10. Preparation and Characterization of Hydrogenated Amorphous Germanium and Hydrogenated Amorphous Germanium - Thin Films.

    NASA Astrophysics Data System (ADS)

    Wu, Hai-Sheng

    Hydrogenated amorphous germanium (a-Ge:H) and germanium carbide (a-Ge_{rm 1 -x}C_{rm x} :H) films were prepared by rf sputtering of a polycrystalline Ge target in a vacuum ~4 times 10^{-7} Torr at various rf power 50 <=q P <=q 600 W (0.27-3.3 W/cm ^2), target-substrate distance 1 <=q d <=q 7 ^{''}, varying partial pressures of Ar, H_2, and C_3H_8, and flow rates f. The vibrational and opto-electronic properties such as infrared (IR) absorption, optical gap, electron -spin-resonance (ESR) signals, and conductivities vary with deposition conditions. The photoconductivity sigma_{rm ph}, in particular, was carefully monitored as a function of the deposition conditions to optimize it. The concentration of Ge-H bonds and the optical gap (E_{rm g}), generally decrease as P is increased. E_ {rm g} of the a-Ge_ {rm 1-x}C_{ rm x}:H films range from 0.85-2.3 eV. The ESR results range from 2 times 10 ^{17} to 2 times 10^{19}^ins/cm ^3. Results of annealing showed the enhanced segregation effect of Ge-C bonds >=q300^circC. The evolution of bonded hydrogen with temperature is studied. Deposition rates (R_{rm d}) of a-Ge:H films are estimated and compared. The thermalization curve for a Ge target is constructed. R _{rm d} was found to decrease exponentially with increasing d, to decrease with increasing partial pressures of H_2 and C_3H_8 and increasing flow rates. R_{ rm d} is maximal at some P_ {rm Ar} and is relatively insensitive to the substrate temperature T_{rm s}, and rises linearly with the rf power. Hydrogen incorporation markedly increased sigma_{rm ph}. The dark conductivity sigma_{rm d} and sigma_{rm ph} increase with increasing d, up to an optimal value at d ~ 6^ {''}, increase at f < 1 sccm, and increase with P and T _{rm s}. Incorporation of significant amounts of carbon sharply reduces sigma_{rm ph}. However, a small amount has little effect on sigma _{rm ph}. Although all increases in sigma_{rm ph} are significant relative to those of previously reported rf

  11. Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

    NASA Astrophysics Data System (ADS)

    Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovanni; Sakat, Emilie; Pellegrini, Giovanni; Biagioni, Paolo; Bollani, Monica; Napolitani, Enrico; Manganelli, Costanza; Virgilio, Michele; Grupp, Alexander; Fischer, Marco P.; Brida, Daniele; Gallacher, Kevin; Paul, Douglas J.; Baldassarre, Leonetta; Calvani, Paolo; Giliberti, Valeria; Nucara, Alessandro; Ortolani, Michele

    2016-08-01

    Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in the 5 to 50 μ m wavelength range at least. In this work, we investigate the electrodynamics of heavily n -type-doped germanium epilayers at infrared frequencies beyond the assumptions of the Drude model. The films are grown on silicon and germanium substrates, are in situ doped with phosphorous in the 1017 to 1019 cm-3 range, then screened plasma frequencies in the 100 to 1200 cm-1 range were observed. We employ infrared spectroscopy, pump-probe spectroscopy, and dc transport measurements to determine the tunability of the plasma frequency. Although no plasmonic structures have been realized in this work, we derive estimates of the decay time of mid-infrared plasmons and of their figures of merit for field confinement and for surface plasmon propagation. The average electron scattering rate increases almost linearly with excitation frequency, in agreement with quantum calculations based on a model of the ellipsoidal Fermi surface at the conduction band minimum of germanium accounting for electron scattering with optical phonons and charged impurities. Instead, we found weak dependence of plasmon losses on neutral impurity density. In films where a transient plasma was generated by optical pumping, we found significant dependence of the energy relaxation times in the few-picosecond range on the static doping level of the film, confirming the key but indirect role played by charged impurities in energy relaxation. Our results indicate that underdamped mid-infrared plasma oscillations are attained in n -type-doped germanium at room temperature.

  12. Electronic transport in nanocrystalline germanium/hydrogenated amorphous silicon composite thin films

    NASA Astrophysics Data System (ADS)

    Bodurtha, Kent Edward

    Recent interest in composite materials based on hydrogenated amorphous silicon (a-Si:H) stems in part from its potential for technical applications in thin film transistors and solar cells. Previous reports have shown promising results for films of a-Si:H with embedded silicon nanocrystals, with the goal of combining the low cost, large area benefits of hydrogenated amorphous silicon with the superior electronic characteristics of crystalline material. These materials are fabricated in a dual-chamber plasma-enhanced chemical vapor deposition system in which the nanocrystals are produced separately from the amorphous film, providing the flexibility to independently tune the growth parameters of each phase; however, electronic transport through these and other similar materials is not well understood. This thesis reports the synthesis and characterization of thin films composed of germanium nanocrystals embedded in a-Si:H. The results presented here describe detailed measurements of the conductivity, photoconductivity and thermopower which reveal a transition from conduction through the a-Si:H for samples with few germanium nanocrystals, to conduction through the nanocrystal phase as the germanium crystal fraction XGe is increased. These films display reduced photosensitivity as XGe is increased, but an unexpected increase in the dark conductivity is found in samples with X Ge > 5% after long light exposures. Detailed studies of the conductivity temperature dependence in these samples exposes a subtle but consistent deviation from the standard Arrhenius expression; the same departure is found in samples of pure a-Si:H; a theoretical model is presented which accurately describes the actual conductivity temperature dependence.

  13. Design and Development of Binary Diffractive Germanium Lens by Thin Film Deposition

    NASA Astrophysics Data System (ADS)

    Alshami, M.; Wabby, A.; Mousselly, M. F.

    2015-11-01

    The design and development of infrared (λ: [8]-[12] μm) binary diffractive germanium lens (BDGL) by two - steps thin film deposition (Physical vapor deposition (PVD) technique) is presented. The optical design of the required elements using the optical design code Zemax, the design of the 4 steps binary surface and its required metallic masks using the programming language Delphi, the procedures of fabrication, and the measurement of the resulting profile, were presented. The comparison between the refractive/diffractive lenses by measuring the minimum resolvable temperature difference (MRTD) shows the advantages of binary diffractive surface.

  14. A flexible method for depositing dense nanocrystal thin films: impaction of germanium nanocrystals

    SciTech Connect

    Holman, Zachary C.; Kortshagen, Uwe R.

    2010-07-27

    Nanomaterials are exciting candidates for use in new optical and electronic devices ranging from solar cells to gas sensors. However, to reach their full potential, nanomaterials must be deposited as dense thin films on flexible substrates using inexpensive processing technologies such as roll-to-roll printing. We report a new, flexible technique for depositing aerosolized nanocrystals that lends itself to roll-to-roll processes. Germanium nanocrystals produced in a plasma are accelerated through a slit orifice by a supersonic gas jet and are impacted onto a translated substrate. A uniform nanocrystal film is quickly deposited over large areas, and features as small as 2 µm can then be patterned using conventional lift-off photolithography. The density of a deposited film depends on the pressures upstream and downstream of the orifice, their ratio, and the distance between the orifice and the substrate. Nanocrystal film densities exceeding 50% of the density of bulk germanium are routinely achieved with several sizes of nanocrystals, approaching the theoretical limit for randomly packed spheres. A simple model is presented that shows that the calculated nanocrystal velocity upon impaction is strongly correlated with the resulting film density.

  15. Investigation of silver-induced crystallization of germanium thin films fabricated on different substrates

    NASA Astrophysics Data System (ADS)

    Kabacelik, Ismail; Kulakci, Mustafa; Turan, Rasit

    2015-06-01

    Silver-induced crystallizations of amorphous germanium (α-Ge) thin films were fabricated through electron beam evaporation on crystalline silicon (c-Si) (100), aluminum-doped zinc oxide (AZO), and glass substrates at room temperature. The solid-phase crystallization (SPC) of α-Ge films was investigated for various post-annealing temperatures between 300 and 500 °C for 60 min. Two crystallization approaches were compared: SPC and metal-induced crystallization (MIC). The structural properties of the Ge thin films fabricated by both methods were studied with Raman and X-ray diffraction (XRD) measurements. The Raman and XRD results indicated that the metal-induced crystallization of the Ge thin films yielded crystallization at temperatures considerably lower than those used in the SPC technique. As expected, the amount of crystallization and the quality of the films were improved with increased annealing temperatures. It was also demonstrated that the same material properties could be obtained using different substrates without any significant variation.

  16. Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

    NASA Astrophysics Data System (ADS)

    Liu, Pei; Longo, Paolo; Zaslavsky, Alexander; Pacifici, Domenico

    2016-01-01

    Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Tauc and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO2 superlattices with single and multiple a-Ge layers down to 2 nm thickness.

  17. Temperature induced phonon behaviour in germanium selenide thin films probed by Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Taube, A.; Łapińska, A.; Judek, J.; Wochtman, N.; Zdrojek, M.

    2016-08-01

    Here we report a detailed study of temperature-dependent phonon properties of exfoliated germanium selenide thin films (several tens of nanometers thick) probed by Raman spectroscopy in the 70–350 K temperature range. The temperature-dependent behavior of the positions and widths of the Raman modes was nonlinear. We concluded that the observed effects arise from anharmonic phonon–phonon interactions and are explained by the phenomenon of optical phonon decay into acoustic phonons. At temperatures above 200 K, the position of the Raman modes tended to be linearly dependent, and the first order temperature coefficients χ were  ‑0.0277, ‑0.0197 and  ‑0.031 cm‑1 K‑1 for B 3g , A g(1) and A g(2) modes, respectively.

  18. Thin film germanium on silicon created via ion implantation and oxide trapping

    NASA Astrophysics Data System (ADS)

    Anthony, R.; Knights, A. P.

    2015-06-01

    We present a novel process for integrating germanium with silicon-on-insulator (SOI) wafers. Germanium is implanted into SOI which is then oxidized, trapping the germanium between the two oxide layers (the grown oxide and the buried oxide). With careful control of the implantation and oxidation conditions this process creates a thin layer (current experiments indicate up to 20-30nm) of almost pure germanium. The layer can be used potentially for fabrication of integrated photo-detectors sensitive to infrared wavelengths, or may serve as a seed for further germanium growth. Results are presented from electron microscopy and Rutherford back-scattering analysis, as well as preliminary modelling using an analytical description of the process.

  19. Laser-induced self-organization in silicon-germanium thin films

    SciTech Connect

    Weizman, M.; Nickel, N. H.; Sieber, I.; Yan, B.

    2008-05-01

    We report on the formation of self-organized structures in thin films of silicon-germanium (Si{sub 1-x}Ge{sub x}) with 0.3films to laser irradiation. Amorphous SiGe samples that are exposed to a single laser pulse exhibit a ripple structure that changes to a hillock structure when the samples are irradiated with additional laser pulses. The topographic structure is coupled to a periodic compositional variation of the SiGe alloy. The periodicity length of the structure after a single laser pulse is in the range of 0.3-1.1 {mu}m, depending on Ge content, layer thickness, and laser fluence, and rapidly grows with increasing number of laser pulses. In situ conductivity measurements during solidification support the theoretical instability analysis that we have done, based on the Mullins-Sekerka theory, to elucidate the nature of this phenomenon. Moreover, as theoretically predicted, the self-organization phenomenon can be turned off by increasing the solidification velocity.

  20. High-performance p-channel polycrystalline-germanium thin-film transistors via excimer laser crystallization and counter doping

    NASA Astrophysics Data System (ADS)

    Liao, Chan-Yu; Huang, Ching-Yu; Huang, Ming-Hui; Chou, Chia-Hsin; Cheng, Huang-Chung

    2016-04-01

    High-quality polycrystalline-germanium (poly-Ge) thin films have been successfully fabricated by excimer laser crystallization (ELC). Grains as large as 1 µm were achieved by ELC at 300 mJ/cm2. Meanwhile, the defect-generated hole concentrations in Ge thin films were significantly reduced. Furthermore, the majority carriers could then be converted to n-type by counter doping (CD) with a suitable dose. Then, high-performance p-channel Ge thin-film transistors (TFTs) with a high on/off current ratio of up to 1.7 × 103 and a high field-effect mobility of up to 208 cm2 V-1 s-1 were demonstrated for a channel width and length both of 0.5 µm. It was revealed that ELC combined with CD is effective for attaining high-performance p-channel poly-Ge TFTs.

  1. High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process

    NASA Astrophysics Data System (ADS)

    Wada, Akira; Zhang, Rui; Takagi, Shinichi; Samukawa, Seiji

    2012-05-01

    High-quality germanium dioxide (GeO2) as a gate oxide is in high demand for use in future high mobility Ge-channel field-effect transistors. GeO2 thin films were directly formed by using a damage-free and low-temperature process of neutral beam oxidation (NBO) after treatment with hydrogen (H) radicals. GeO2 thin films (equivalent oxide thickness (EOT) = 1.7 nm) with a high-quality interface and an extremely low interface state density (<1 × 1011 cm-2 eV-1) could be formed even at low temperature (300 °C) by combining the H radical treatment, which resulted in the removal of native oxides, with the NBO process we developed.

  2. Characterization of a controlled electroless deposition of copper thin film on germanium and silicon surfaces

    NASA Astrophysics Data System (ADS)

    Scudiero, Louis; Fasasi, Ayuba; Griffiths, Peter R.

    2011-02-01

    Nanofilms of copper were deposited on silicon and, for the first time, on polycrystalline germanium substrates by electroless deposition. Germanium or silicon disks were immersed in a 10 mM copper sulfate solution containing dilute hydrofluoric acid at room temperature. This simple one-step deposition does not require the use of laborious operations or expensive equipment, that the reaction medium be degassed, or that the film be annealed. The copper film grows in a few minutes, producing a film on both Ge and Si that covers a very large area of the substrate in contrast to other metals such as Au, Ag, Pt and Pd for which deposition on Ge and Si produces islands or dendrites. Atomic force microscopy, X-ray photoelectron spectroscopy (XPS) and powder X-ray diffraction (PXRD) were used to characterize the microstructure and confirmed the formation of elemental copper nanofilms. The AFM micrographs reveal a Stranski-Krastanov type of film growth (layers + islands) that varies with the length of time the Ge or Si substrate is immersed in the CuSO4 solution. Thicker films were observed on the Ge than on the Si substrate resulting in larger particles and rougher surface than on Si. XPS analysis shows that the elemental copper is deposited on both Ge and Si substrates and that the films oxidize over a period of weeks with air exposure at room temperature. Finally, PXRD data reveal two preferential orientations (1 1 1) and (2 0 0) for the copper crystallites grown on both Ge and Si. The same intensity of the (1 1 1)-texture was measured on both Ge and Si substrate which is an important result because it has been shown that the (1 1 1) texture reduces stress-induced voiding and increases resistance to electromigration in metal interconnects.

  3. Origin of additional broad peaks in Raman spectra from thin germanium-rich silicon–germanium films

    NASA Astrophysics Data System (ADS)

    Takeuchi, Kazuma; Kosemura, Daisuke; Yokogawa, Ryo; Usuda, Koji; Ogura, Atsushi

    2016-07-01

    Additional broad peaks in Raman spectra from thin Ge-rich SiGe films were examined in detail. The broad peak on the low-wavenumber side of first-order optical phonon was also present for pure Ge, which indicates that the localized mode is not the reason for the broad peaks. Furthermore, other factors, e.g., strain, defect, phonon confinement effect, Fano effect, and fluorescence from oil, were excluded from the origin of the broad peaks. We assigned the broad peaks to surface optical phonon modes. The dependence of this surface mode on Ge concentration in Ge-rich SiGe was also investigated and the behavior was discussed.

  4. Optical diagnostics of the laser-induced phase transformations in thin germanium films on silicon, sapphire, and fused silica

    NASA Astrophysics Data System (ADS)

    Novikov, H. A.; Batalov, R. I.; Bayazitov, R. M.; Faizrakhmanov, I. A.; Ivlev, G. D.; Prokop'ev, S. L.

    2015-03-01

    The in-situ procedure is used to study the modification of thin (200-600 nm) germanium films induced by nanosecond pulses of a ruby laser. The films are produced using the ion-beam or magnetron sputtering on single-crystalline silicon (Si), sapphire (Al2O3), and fused silica (α-SiO2) substrates. The results on the dynamics of the laser-induced processes are obtained using the optical probing of the irradiated region at wavelengths of λ = 0.53 and 1.06 μm. The results of probing make it possible to determine the threshold laser energy densities that correspond to the Ge and Si melting and the generation of the Ge ablation plasma versus the amount of deposited Ge and thermophysical parameters of the substrate. The reflection oscillograms are used to obtain the dependences of the melt lifetime on the laser-pulse energy density.

  5. Boron- and phosphorus-doped silicon germanium alloy nanocrystals—Nonthermal plasma synthesis and gas-phase thin film deposition

    SciTech Connect

    Rowe, David J. E-mail: kortshagen@umn.edu; Kortshagen, Uwe R. E-mail: kortshagen@umn.edu

    2014-02-01

    Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs) synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si{sub 1−x}Ge{sub x} for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films.

  6. Development of Thin Film Germanium-Gold Thermistors for Calorimetric Detection of Nuclear Radiation.

    NASA Astrophysics Data System (ADS)

    Wang, Xunxie

    1995-01-01

    The present work is to produce thin film semiconductor thermistors which can be directly fabricated on radiation absorbers to act as ultra low-mass, highly sensitive cryogenic phonon sensors for detecting single nuclear radiation interaction invents. The specific application envisioned for these devices is in the search for galactic Dark Matter, which is proposed to exist in the form of weakly interacting massive particles in the galaxy. Thin film Au doped Ge thermistors were directly fabricated on single crystal silicon absorbers using vacuum filament evaporation and microfabrication techniques. The fabrication procedure developed in the present work gives micron-scale thin film GeAu thermistors with highly reproducible characteristics. Electrical and thermal properties of thin film Ge_{rm 1-x}Au _{rm x} for 0.019 < x < 0.17 were studied between room temperature and 0.019K and in magnetic fields up to 4.0T. Measurements indicated that variable-range-hopping dominates the conductivity of GeAu thin film at temperatures below 10K. Metal-insulator transition of the film is found to occur for x > 0.17. The observed magnetoresistance is explained by using a field-dependent hopping exponent proposed in the present work combined with Mott's hopping conductivity theory. A new treatment of electrical field-induced nonlinearity in variable-range-hopping is also given which quantitatively reproduced the observed nonlinear resistivity. Electrical heat pulse and particle detection measurements showed that the total effective heat capacity of the device was dominated by the silicon absorber substrate at a bath temperature of 1.5 K and by electron system of the thermistor itself of the device when the bath temperatures were below 100 mK. Excellent responsivity of GeAu thin film calorimeters has been demonstrated in AC electrical pulse and nuclear radiation detection experiments. At optimal bias power, the responsivity (|DeltaV/ DeltaE|) of the present devices reaches 10^8 V/J at

  7. Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

    DOE PAGESBeta

    Li, T. T.; Bayu Aji, L. B.; Heo, T. W.; Santala, M. K.; Kucheyev, S. O.; Campbell, G. H.

    2016-06-03

    Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar+ ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. In conclusion, the propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

  8. A study of the optical properties and adhesion of zinc sulfide anti-reflection thin film coated on a germanium substrate

    NASA Astrophysics Data System (ADS)

    Firoozifar, S. A. R.; Behjat, A.; Kadivar, E.; Ghorashi, S. M. B.; Zarandi, M. Borhani

    2011-11-01

    To conduct this study, zinc sulfide (ZnS) thin films deposited on germanium (Ge) substrates were prepared by an evaporation method. The effects of deposition rate and annealing on the optical properties and adhesion of the ZnS thin films were investigated. The transmission intensity and the X-ray diffraction (XRD) pattern of the samples showed that the transmittance of the samples decreases by increasing the evaporation rates. However, with the increase of the annealing temperature, crystallinity of the thin films improves which, in turn, results in the enhancement of the transmission intensity in a far infrared region. The maximum grain size was obtained at the annealing temperature of 225 °C. Our experimental results also show that evaporation rate and annealing influences the adhesion of ZnS thin films to Ge substrates.

  9. Ultra-doped n-type germanium thin films for sensing in the mid-infrared.

    PubMed

    Prucnal, Slawomir; Liu, Fang; Voelskow, Matthias; Vines, Lasse; Rebohle, Lars; Lang, Denny; Berencén, Yonder; Andric, Stefan; Boettger, Roman; Helm, Manfred; Zhou, Shengqiang; Skorupa, Wolfgang

    2016-01-01

    A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) for the fabrication of heavily doped n-type Ge with high mobility. This approach, in contrast to conventional annealing procedures, leads to the full recrystallization of Ge films and high P activation. In this way single crystalline Ge thin films free of defects with maximum attained carrier concentrations of 2.20 ± 0.11 × 10(20) cm(-3) and carrier mobilities above 260 cm(2)/(V·s) were obtained. The obtained ultra-doped Ge films display a room-temperature plasma frequency above 1,850 cm(-1), which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range. PMID:27282547

  10. Ultra-doped n-type germanium thin films for sensing in the mid-infrared

    PubMed Central

    Prucnal, Slawomir; Liu, Fang; Voelskow, Matthias; Vines, Lasse; Rebohle, Lars; Lang, Denny; Berencén, Yonder; Andric, Stefan; Boettger, Roman; Helm, Manfred; Zhou, Shengqiang; Skorupa, Wolfgang

    2016-01-01

    A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) for the fabrication of heavily doped n-type Ge with high mobility. This approach, in contrast to conventional annealing procedures, leads to the full recrystallization of Ge films and high P activation. In this way single crystalline Ge thin films free of defects with maximum attained carrier concentrations of 2.20 ± 0.11 × 1020 cm−3 and carrier mobilities above 260 cm2/(V·s) were obtained. The obtained ultra-doped Ge films display a room-temperature plasma frequency above 1,850 cm−1, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range. PMID:27282547

  11. Ultra-doped n-type germanium thin films for sensing in the mid-infrared

    NASA Astrophysics Data System (ADS)

    Prucnal, Slawomir; Liu, Fang; Voelskow, Matthias; Vines, Lasse; Rebohle, Lars; Lang, Denny; Berencén, Yonder; Andric, Stefan; Boettger, Roman; Helm, Manfred; Zhou, Shengqiang; Skorupa, Wolfgang

    2016-06-01

    A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) for the fabrication of heavily doped n-type Ge with high mobility. This approach, in contrast to conventional annealing procedures, leads to the full recrystallization of Ge films and high P activation. In this way single crystalline Ge thin films free of defects with maximum attained carrier concentrations of 2.20 ± 0.11 × 1020 cm‑3 and carrier mobilities above 260 cm2/(V·s) were obtained. The obtained ultra-doped Ge films display a room-temperature plasma frequency above 1,850 cm‑1, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range.

  12. Growth and characterization of crystalline germanium carbide thin films and devices

    NASA Astrophysics Data System (ADS)

    Herrold, Jason Thomas

    2000-10-01

    Alloys of Group IV elements have been routinely studied because new materials can be developed for microelectronic applications in extreme environments, high frequency applications, high efficiency optoelectronic devices or high power density circuits. One of the greatest practical benefits of these materials is that they can be made to work with established Si fabrication technologies, thus greatly reducing the difficulty in manufacturing devices made from these materials. However, there is a Group IV alloy that has remained virtually unexplored, the crystalline Ge:C system, as Ge and C are insoluble in one another at all temperatures and pressures. However, it has been demonstrated that metastable crystalline Ge1-xCx thin films can be produced with limited success. These materials are of great interest because they can potentially offer the superior mobility and optical characteristics of Ge as compared to those of Si, while the addition of C can raise the bandgap and reduce the lattice constant of the material to be comparable to those of Si. The work presented here uses ECRPECVD processing to grow crystalline Ge1-xCx films on Si wafers. The first stage of the work is designed to study the characteristics of the plasma source and how the plasma processing parameters affect the material properties of the resulting films. The basic material, optical and electrical properties of the films were studied to build a knowledge resource on this new material. For comparison and to deepen the understanding of the nature of the alloy, pure Ge films were grown with similar parameters to the Ge1-xC x alloy films. The films are characterized by UV/VIS/NIR Spectroscopy, Raman spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, four point probe conductivity and Hall mobility measurements. The second stage of the research was to dope the material n and p type and to determine the affect on the electrical properties. The final stage was

  13. Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

    SciTech Connect

    Cariou, R.; Ruggeri, R.; Tan, X.; Nassar, J.; Roca i Cabarrocas, P.; Mannino, Giovanni

    2014-07-15

    We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 10{sup 6} cm{sup −2} are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD.

  14. Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

    SciTech Connect

    Lu, Cimang Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira

    2015-08-17

    We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

  15. Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films

    SciTech Connect

    Meaudre, M.; Gueunier-Farret, M.E.; Meaudre, R.; Kleider, J.P.; Vignoli, S.; Canut, B.

    2005-08-01

    Hydrogenated silicon-germanium alloys (SiGe:H) are deposited by plasma-enhanced chemical vapor deposition in a plasma regime close to that of the formation of powder. It is thus possible to obtain nanostructured materials that we call polymorphous materials, pm-Si{sub 1-x}Ge{sub x}:H. Studies of space-charge-limited currents and space-charge relaxation allow to get information on midgap states originating from Ge. It is observed that the electron-capture cross section of states at the Fermi level increases linearly with their concentration. This is supported by modulated photocurrent experiments. Finally, it is shown that the variations of both the Ge dangling bond concentration and their electron-capture cross section with Ge content account for the photoresponse in these materials.

  16. Epitaxial growth of germanium thin films on crystal silicon substrates by solid phase crystallization

    NASA Astrophysics Data System (ADS)

    Isomura, Masao; Kanai, Mikuri

    2015-04-01

    We have investigated the solid phase crystallization (SPC) of amorphous germanium (a-Ge) precursors on single crystalline silicon (c-Si) substrates as seed layers and successfully obtained the epitaxial growth of Ge. The n-type (100) Si substrate is most suitable for preferential growth following the substrate orientation, because the velocity of preferential growth is higher than those on the other substrates and preferential growth is completed before random nucleation. The impurity contamination in the a-Ge precursors probably enhances random nucleation. The epitaxial growth is disturbed by the impurity contamination at a relatively high SPC temperature in the intrinsic and p-type Si substrates with the (100) orientation and the n-type and intrinsic Si substrates with the (111) orientation, because the lower velocity of preferential growth allows random crystallization. Almost no epitaxial growth is observed on the p-type (111) Si substrates even when low-impurity a-Ge precursors are used.

  17. Stabilization of amorphous structure in silicon thin film by adding germanium

    SciTech Connect

    Makino, Nobuaki; Shigeta, Yukichi

    2015-06-21

    The stabilization of the amorphous structure in amorphous silicon film by adding Ge atoms was studied using Raman spectroscopy. Amorphous Si{sub 1−x}Ge{sub x} (x = 0.0, 0.03, 0.14, and 0.27) films were deposited on glass substrates from electron beam evaporation sources and annealed in N{sub 2} atmosphere. The change in the amorphous states and the phase transition from amorphous to crystalline were characterized using the TO, LO, and LA phonons in the Raman spectra. The temperature of the transition from the amorphous phase to the crystalline phase was higher for the a-Si{sub 1−x}Ge{sub x} (x = 0.03, 0.14) films, and the crystallization was hindered. The reason why the addition of a suitable quantity of Ge atoms into the three-dimensional amorphous silicon network stabilizes its amorphous structure is discussed based on the changes in the Raman signals of the TO, LO, and LA phonons during annealing. The characteristic bond length of the Ge atoms allows them to stabilize the random network of the amorphous Si composed of quasi-tetrahedral Si units, and obstruct its rearrangement.

  18. Carbon thin film thermometry

    NASA Technical Reports Server (NTRS)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  19. Polysilicon thin films and interfaces

    SciTech Connect

    Kamins, T. ); Raicu, B. ); Thompson, C.V. )

    1990-01-01

    This volume contains the proceedings of a symposium on polysilicon thin films and interfaces, held as part of the 1990 Materials Research Society Spring Meeting. Topics covered include: crystal grown fo silicon and germanium wafers for photovoltaic devices, microanalysis of tungsten silicide interface, thermal processing of polysilicon thin films, and electrical and optical properties of polysilicon sheets for photovoltaic devices.

  20. The investigation of optimal Silicon/Silicon(1-x)Germanium(x) thin-film solar cells with quantitative analysis

    NASA Astrophysics Data System (ADS)

    Ehsan, Md Amimul

    Thin-film solar cells are emerging from the research laboratory to become commercially available devices for low cost electrical power generation applications. Silicon which is a cheap, abundant and non-toxic elemental semiconductor is an attractive candidate for these solar cells. Advanced modeling and simulation of Si thin-film solar cells has been performed to make this technology more cost effective without compromising the performance and efficiency. In this study, we focus on the design and optimization of Si/Si1-xGex heterostructures, and microcrystalline and nanocrystalline Si thin-film solar cells. Layer by layer optimization of these structures was performed by using advanced bandgap engineering followed by numerical analysis for their structural, electrical and optical characterizations. Special care has been introduced for the selection of material layers which can help to improve the light absorption properties of these structures for harvesting the solar spectrum. Various strategies such as the optimization of the doping concentrations, Ge contents in Si1-xGex buffer layer, incorporation of the absorber layers and surface texturing have been in used to improve overall conversion efficiencies of the solar cells. To be more specific, the observed improvement in the conversion efficiency of these solar cells has been calculated by tailoring the thickness of the buffer, absorber, and emitter layers. In brief, an approach relying on the phenomena of improved absorption of the buffer and absorber layer which leads to a corresponding gain in the open circuit voltage and short circuit current is explored. For numerical analysis, a PC1D simulator is employed that uses finite element analysis technique for solving semiconductor transport equations. A comparative study of the Si/Si1-xGex and Ge/Si1-xGex is also performed. We found that due to the higher lattice mismatch of Ge to Si, thin-film solar cells based on Si/Si1-xGex heterostructures performed much

  1. Thin Film?

    NASA Astrophysics Data System (ADS)

    Kariper, İ. Afşin

    2014-09-01

    This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension.

  2. Germanium films by polymer-assisted deposition

    SciTech Connect

    Jia, Quanxi; Burrell, Anthony K.; Bauer, Eve; Ronning, Filip; McCleskey, Thomas Mark; Zou, Guifu

    2013-01-15

    Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.

  3. Thin Films

    NASA Astrophysics Data System (ADS)

    Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

    2014-11-01

    Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

  4. A pseudo-single-crystalline germanium film for flexible electronics

    SciTech Connect

    Higashi, H.; Yamada, S.; Kanashima, T.; Hamaya, K.; Kasahara, K.; Park, J.-H.; Miyao, M.; Kudo, K.; Okamoto, H.; Moto, K.; Tsunoda, I.

    2015-01-26

    We demonstrate large-area (∼600 μm), (111)-oriented, and high-crystallinity, i.e., pseudo-single-crystalline, germanium (Ge) films at 275 °C, where the temperature is lower than the softening temperature of a flexible substrate. A modulated gold-induced layer exchange crystallization method with an atomic-layer deposited Al{sub 2}O{sub 3} barrier and amorphous-Ge/Au multilayers is established. From the Raman measurements, we can judge that the crystallinity of the obtained Ge films is higher than those grown by aluminum-induced-crystallization methods. Even on a flexible substrate, the pseudo-single-crystalline Ge films for the circuit with thin-film transistor arrays can be achieved, leading to high-performance flexible electronics based on an inorganic-semiconductor channel.

  5. Thin Films

    NASA Astrophysics Data System (ADS)

    Naffouti, Wafa; Nasr, Tarek Ben; Mehdi, Ahmed; Kamoun-Turki, Najoua

    2014-11-01

    Titanium dioxide (TiO2) thin films were synthesized on glass substrates by spray pyrolysis. The effect of solution flow rate on the physical properties of the films was investigated by use of x-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy (AFM), and spectrophotometry techniques. XRD analysis revealed the tetragonal anatase phase of TiO2 with highly preferred (101) orientation. AFM images showed that grain size on top of TiO2 thin films depended on solution flow rate. An indirect band gap energy of 3.46 eV was determined by means of transmission and reflection measurements. The envelope method, based on the optical transmission spectrum, was used to determine film thickness and optical constants, for example real and imaginary parts of the dielectric constant, refractive index, and extinction coefficient. Ultraviolet and visible photoluminescence emission peaks were observed at room temperature. These peaks were attributed to the intrinsic emission and to the surface defect states, respectively.

  6. Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium

    NASA Astrophysics Data System (ADS)

    Jain, N.; Zhu, Y.; Maurya, D.; Varghese, R.; Priya, S.; Hudait, M. K.

    2014-01-01

    We have investigated the structural and band alignment properties of nanoscale titanium dioxide (TiO2) thin films deposited on epitaxial crystallographic oriented Ge layers grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy. The TiO2 thin films deposited at low temperature by physical vapor deposition were found to be amorphous in nature, and high-resolution transmission electron microscopy confirmed a sharp heterointerface between the TiO2 thin film and the epitaxially grown Ge with no traceable interfacial layer. A comprehensive assessment on the effect of substrate orientation on the band alignment at the TiO2/Ge heterointerface is presented by utilizing x-ray photoelectron spectroscopy and spectroscopic ellipsometry. A band-gap of 3.33 ± 0.02 eV was determined for the amorphous TiO2 thin film from the Tauc plot. Irrespective of the crystallographic orientation of the epitaxial Ge layer, a sufficient valence band-offset of greater than 2 eV was obtained at the TiO2/Ge heterointerface while the corresponding conduction band-offsets for the aforementioned TiO2/Ge system were found to be smaller than 1 eV. A comparative assessment on the effect of Ge substrate orientation revealed a valence band-offset relation of ΔEV(100) > ΔEV(111) > ΔEV(110) and a conduction band-offset relation of ΔEC(110) > ΔEC(111) > ΔEC(100). These band-offset parameters are of critical importance and will provide key insight for the design and performance analysis of TiO2 for potential high-κ dielectric integration and for future metal-insulator-semiconductor contact applications with next generation of Ge based metal-oxide field-effect transistors.

  7. All-Inorganic Germanium Nanocrystal Films by Cationic Ligand Exchange.

    PubMed

    Wheeler, Lance M; Nichols, Asa W; Chernomordik, Boris D; Anderson, Nicholas C; Beard, Matthew C; Neale, Nathan R

    2016-03-01

    We introduce a new paradigm for group IV nanocrystal surface chemistry based on room temperature surface activation that enables ionic ligand exchange. Germanium nanocrystals synthesized in a gas-phase plasma reactor are functionalized with labile, cationic alkylammonium ligands rather than with traditional covalently bound groups. We employ Fourier transform infrared and (1)H nuclear magnetic resonance spectroscopies to demonstrate the alkylammonium ligands are freely exchanged on the germanium nanocrystal surface with a variety of cationic ligands, including short inorganic ligands such as ammonium and alkali metal cations. This ionic ligand exchange chemistry is used to demonstrate enhanced transport in germanium nanocrystal films following ligand exchange as well as the first photovoltaic device based on an all-inorganic germanium nanocrystal absorber layer cast from solution. This new ligand chemistry should accelerate progress in utilizing germanium and other group IV nanocrystals for optoelectronic applications. PMID:26796765

  8. All-inorganic Germanium nanocrystal films by cationic ligand exchange

    DOE PAGESBeta

    Wheeler, Lance M.; Nichols, Asa W.; Chernomordik, Boris D.; Anderson, Nicholas C.; Beard, Matthew C.; Neale, Nathan R.

    2016-01-21

    In this study, we introduce a new paradigm for group IV nanocrystal surface chemistry based on room temperature surface activation that enables ionic ligand exchange. Germanium nanocrystals synthesized in a gas-phase plasma reactor are functionalized with labile, cationic alkylammonium ligands rather than with traditional covalently bound groups. We employ Fourier transform infrared and 1H nuclear magnetic resonance spectroscopies to demonstrate the alkylammonium ligands are freely exchanged on the germanium nanocrystal surface with a variety of cationic ligands, including short inorganic ligands such as ammonium and alkali metal cations. This ionic ligand exchange chemistry is used to demonstrate enhanced transport inmore » germanium nanocrystal films following ligand exchange as well as the first photovoltaic device based on an all-inorganic germanium nanocrystal absorber layer cast from solution. This new ligand chemistry should accelerate progress in utilizing germanium and other group IV nanocrystals for optoelectronic applications.« less

  9. Interfacial band alignment and structural properties of nanoscale TiO{sub 2} thin films for integration with epitaxial crystallographic oriented germanium

    SciTech Connect

    Jain, N.; Zhu, Y.; Hudait, M. K.; Maurya, D.; Varghese, R.; Priya, S.

    2014-01-14

    We have investigated the structural and band alignment properties of nanoscale titanium dioxide (TiO{sub 2}) thin films deposited on epitaxial crystallographic oriented Ge layers grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy. The TiO{sub 2} thin films deposited at low temperature by physical vapor deposition were found to be amorphous in nature, and high-resolution transmission electron microscopy confirmed a sharp heterointerface between the TiO{sub 2} thin film and the epitaxially grown Ge with no traceable interfacial layer. A comprehensive assessment on the effect of substrate orientation on the band alignment at the TiO{sub 2}/Ge heterointerface is presented by utilizing x-ray photoelectron spectroscopy and spectroscopic ellipsometry. A band-gap of 3.33 ± 0.02 eV was determined for the amorphous TiO{sub 2} thin film from the Tauc plot. Irrespective of the crystallographic orientation of the epitaxial Ge layer, a sufficient valence band-offset of greater than 2 eV was obtained at the TiO{sub 2}/Ge heterointerface while the corresponding conduction band-offsets for the aforementioned TiO{sub 2}/Ge system were found to be smaller than 1 eV. A comparative assessment on the effect of Ge substrate orientation revealed a valence band-offset relation of ΔE{sub V}(100) > ΔE{sub V}(111) > ΔE{sub V}(110) and a conduction band-offset relation of ΔE{sub C}(110) > ΔE{sub C}(111) > ΔE{sub C}(100). These band-offset parameters are of critical importance and will provide key insight for the design and performance analysis of TiO{sub 2} for potential high-κ dielectric integration and for future metal-insulator-semiconductor contact applications with next generation of Ge based metal-oxide field-effect transistors.

  10. Germanium

    SciTech Connect

    Major-Sosias, M.A.

    1996-01-01

    Germanium is an important semiconductor material, or metalloid which, by definition, is a material whose electrical properties are halfway between those of metallic conductors and electrical insulators. This paper describes the properties, sources, and market for germanium.

  11. The Growth and Characterization of Germanium-Carbon Alloy Thin Films and Solid Phase Equilibria for Metal-Silicon - Ternary Systems: Magnesium, Calcium, Strontium, Barium, Scandium, Yttrium, Lanthanum, Titanium, Zirconium and Hafnium

    NASA Astrophysics Data System (ADS)

    Yuan, Haojie

    1992-09-01

    Thin films of pure germanium-carbon alloys (Ge _{rm x}C _{rm 1-x} with 0 <=q x <=q 1) have been grown on Si and Al_2O_3 substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray 0-20 diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00 eV to 0.85 eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples have a bonding structure that is a mixture of sp^2 and sp^3 hybridizations. The presence of the sp^2 C is apparently what causes the bandgap of amorphous Ge-C alloys to decrease with increasing carbon concentration. The solidus portion of the ternary phase diagrams of the type M-Si-O, where M = Mg, Ca, Sr, Ba, Sc, Y, La, Ti, Zr and Hf have been derived at 298K and 1 atm oxygen partial pressure by investigating the bulk reactions possible in these systems. These phase diagrams, which have been determined by experiments and by calculations using thermodynamic data available, can be used to predict the occurrence of the reaction products or the stability of the phases present at the interfaces between different solid materials. Hence, they provide guides in designing thin film structures and in selecting candidate materials to form chemically stable interfaces. A research effort has been made on the investigation of the growth of diamond thin films from a carbon containing solid-CI_4, using laser ablation technique. The film grown by laser ablation from CI _4 is mainly composed of carbon with very small amount of oxygen and iodine as indicated by x-ray photoelectron spectroscopy data. The Auger electron spectroscopy result shows

  12. Pyrolyzed thin film carbon

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  13. Thin film metrology.

    PubMed

    Nitsch, Gerald; Flinn, Gregory

    2007-10-01

    Thin film metrology is suitable for characterising and performing quality control of a variety of coatings and films used in medical applications. The capabilities of today's systems are described. PMID:18078184

  14. High Precision Metal Thin Film Liftoff Technique

    NASA Technical Reports Server (NTRS)

    Brown, Ari D. (Inventor); Patel, Amil A. (Inventor)

    2015-01-01

    A metal film liftoff process includes applying a polymer layer onto a silicon substrate, applying a germanium layer over the polymer layer to create a bilayer lift off mask, applying a patterned photoresist layer over the germanium layer, removing an exposed portion of the germanium layer, removing the photoresist layer and a portion of the polymer layer to expose a portion of the substrate and create an overhanging structure of the germanium layer, depositing a metal film over the exposed portion of the substrate and the germanium layer, and removing the polymer and germanium layers along with the overlaying metal film.

  15. Ceramic Composite Thin Films

    NASA Technical Reports Server (NTRS)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  16. Biomimetic thin film synthesis

    SciTech Connect

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  17. Thin film hydrogen sensor

    DOEpatents

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  18. Thin film hydrogen sensor

    DOEpatents

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  19. Multifunctional thin film surface

    SciTech Connect

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  20. Thin film tritium dosimetry

    DOEpatents

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  1. Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

    SciTech Connect

    Posseme, N. Pollet, O.; Barnola, S.

    2014-08-04

    Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ions implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.

  2. Electronic Structure of Germanium Nanocrystal Films Probed with Synchrotron Radiation

    SciTech Connect

    Bostedt, C

    2002-05-01

    The fundamental structure--property relationship of semiconductor quantum dots has been investigated. For deposited germanium nanocrystals strong quantum confinement effects have been determined with synchrotron radiation based x-ray absorption and photoemission techniques. The nanocrystals are condensed out of the gas phase with a narrow size distribution and subsequently deposited in situ onto various substrates. The particles are crystalline in the cubic phase with a structurally disordered surface shell and the resulting film morphology depends strongly on the substrate material and condition. The disordered surface region has an impact on the overall electronic structure of the particles. In a size-dependent study, the conduction and valence band edge of germanium nanocrystals have been measured for the first time and compared to the bulk crystal. The band edges move to higher energies as the particle size is decreased, consistent with quantum confinement theory. To obtain a more accurate analysis of confinement effects in the empty states, a novel analysis method utilizing an effective particle size for the x-ray absorption experiment, which allows a deconvolution of absorption edge broadening effects, has been introduced. Comparison of the present study to earlier studies on silicon reveals that germanium exhibits stronger quantum confinement effects than silicon. Below a critical particle size of 2.3 {+-} 0.7 nm, the band gap of germanium becomes larger than that of silicon--even if it is the opposite for bulk materials. This result agrees phenomenologically with effective mass and tight binding theories but contradicts the findings of recent pseudopotential calculations. The discrepancy between theory and experiments is attributed to the differences in the theoretical models and experimental systems. The experimentally observed structural disorder of the particle surface has to be included in the theoretical models.

  3. Jet thinning of germanium for TEM using automatic termination of polishing

    SciTech Connect

    Kestel, B.J.

    1993-01-01

    This report describes an automated jet electropolishing technique, using modified commercial equipment, for the production of germanium TEM specimens. This technique allows rapid and reliable thinning of large areas and results in clean surfaces.

  4. Evaporated VOx Thin Films

    NASA Astrophysics Data System (ADS)

    Stapinski, Tomasz; Leja, E.

    1989-03-01

    VOx thin films on glass were obtained by thermal evaporation of V205, powder. The structural investigations were carried out with the use of X-ray diffractometer. The electrical properties of the film were examined by means of temperature measurements of resistivity for the samples heat-treated in various conditions. Optical transmission and reflection spectra of VOX films of various composition showed the influence of the heat treatment.

  5. Thin film photovoltaics

    SciTech Connect

    Zweibel, K; Ullal, H S

    1989-05-01

    Thin films are considered a potentially attractive technological approach to making cost-effective electricity by photovoltaics. Over the last twenty years, many have been investigated and some (cadmium telluride, copper indium diselenide, amorphous silicon) have become leading candidates for future large-scale commercialization. This paper surveys the past development of these key thin films and gives their status and future prospects. In all cases, significant progress toward cost-effective PV electricity has been made. If this progress continues, it appears that thin film PV could provide electricity that is competitive for summer daytime peaking power requirements by the middle of the 1990s; and electricity in a range that is competitive with fossil fuel costs (i.e., 6 cents/kilowatt-hour) should be available from PV around the turn of the century. 22 refs., 9 figs.

  6. Thin film temperature sensor

    NASA Technical Reports Server (NTRS)

    Grant, H. P.; Przybyszewski, J. S.

    1980-01-01

    Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

  7. Thin film photovoltaic device

    DOEpatents

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  8. Thin film ceramic thermocouples

    NASA Technical Reports Server (NTRS)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  9. Thin film photovoltaic device

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  10. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  11. Thin film solar cell workshop

    NASA Technical Reports Server (NTRS)

    Armstrong, Joe; Jeffrey, Frank

    1993-01-01

    A summation of responses to questions posed to the thin-film solar cell workshop and the ensuing discussion is provided. Participants in the workshop included photovoltaic manufacturers (both thin film and crystalline), cell performance investigators, and consumers.

  12. Thin films for material engineering

    NASA Astrophysics Data System (ADS)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  13. Roughening transition in nanoporous hydrogenated amorphous germanium: Roughness correlation to film stress

    NASA Astrophysics Data System (ADS)

    Carroll, M. S.; Verley, J. C.; Sheng, J. J.; Banks, J.

    2007-03-01

    Hydrogenated amorphous germanium (a-Ge:H) is a material of interest for optoelectronic applications such as solar cells and radiation detectors because of the material's potential to extend the wavelength sensitivity of hydrogenated amorphous silicon (a-Si:H). An increase in porosity is observed in amorphous germanium compared to a-Si :H, and this increase in porosity has been correlated with a degradation of the electrical performance. Improved understanding of the mechanisms of porous formation in a-Ge :H films is therefore desirable in order to better control it. In this paper we describe a correlation between film stress and surface roughness, which evolves with increasing thickness of a-Ge :H. A roughening transition from planar two-dimensional growth to three-dimensional growth at a critical thickness less than 800Å results in a network of needlelike nanotrench cavities which stretch from the transition thickness to the surface in films up to 4000Å thick. Surface roughness measurements by atomic force microscope and transmission electron microscopy indicate that the transition is abrupt and that the roughness increases linearly after the transition thickness. The roughening transition thickness is, furthermore, found to correlate with the maxima of the integrated compressive stress. The compressive stress is reduced after this transition thickness due to the incorporation of nanovoids into the film that introduce tensile stress as the islands coalesce together. The roughening transition behavior is similar to that found in a general class of Volmer-Weber mode thin film deposition (e.g., Cu, Ag, and nonhydrogenated amorphous silicon), which offers additional insight into the underlying mechanisms of the stress and roughening in these a-Ge :H films. The suppression of the roughening transition by changing the kinetics of the deposition rates (e.g., slowing the deposition rate with a weak sputtering bias) is also observed and discussed.

  14. Thin-film optical initiator

    DOEpatents

    Erickson, Kenneth L.

    2001-01-01

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  15. Poisson Ratio of Epitaxial Germanium Films Grown on Silicon

    NASA Astrophysics Data System (ADS)

    Bharathan, Jayesh; Narayan, Jagdish; Rozgonyi, George; Bulman, Gary E.

    2013-01-01

    An accurate knowledge of elastic constants of thin films is important in understanding the effect of strain on material properties. We have used residual thermal strain to measure the Poisson ratio of Ge films grown on Si ⟨001⟩ substrates, using the sin2 ψ method and high-resolution x-ray diffraction. The Poisson ratio of the Ge films was measured to be 0.25, compared with the bulk value of 0.27. Our study indicates that use of Poisson ratio instead of bulk compliance values yields a more accurate description of the state of in-plane strain present in the film.

  16. NMR characterization of thin films

    DOEpatents

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  17. NMR characterization of thin films

    DOEpatents

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  18. Selective inorganic thin films

    SciTech Connect

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T.

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  19. Thin film photovoltaic cell

    DOEpatents

    Meakin, John D.; Bragagnolo, Julio

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  20. Thin film scintillators

    NASA Astrophysics Data System (ADS)

    McDonald, Warren; McKinney, George; Tzolov, Marian

    2015-03-01

    Scintillating materials convert energy flux (particles or electromagnetic waves) into light with spectral characteristic matching a subsequent light detector. Commercial scintillators such as yttrium aluminum garnet (YAG) and yttrium aluminum perovskite (YAP) are commonly used. These are inefficient at lower energies due to the conductive coating present on their top surface, which is needed to avoid charging. We hypothesize that nano-structured thin film scintillators will outperform the commercial scintillators at low electron energies. We have developed alternative thin film scintillators, zinc tungstate and zinc oxide, which show promise for higher sensitivity to lower energy electrons since they are inherently conductive. Zinc tungstate films exhibit photoluminescence quantum efficiency of 74%. Cathodoluminescence spectroscopy was applied in transmission and reflection geometries. The comparison between the thin films and the YAG and YAP commercial scintillators shows much higher light output from the zinc tungstate and zinc oxide at electron energies less than 5 keV. Our films were integrated in a backscattered electron detector. This detector delivers better images than an identical detector with commercial YAG scintillator at low electron energies. Dr. Nicholas Barbi from PulseTor LLC, Dr. Anura Goonewardene, NSF Grants: #0806660, #1058829, #0923047.

  1. Thin film superconductor magnetic bearings

    SciTech Connect

    Weinberger, B.R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft that is subject to a load (L) and rotatable around an axis of rotation, a magnet mounted to the shaft, and a stator in proximity to the shaft. The stator has a superconductor thin film assembly positioned to interact with the magnet to produce a levitation force on the shaft that supports the load (L). The thin film assembly includes at least two superconductor thin films and at least one substrate. Each thin film is positioned on a substrate and all the thin films are positioned such that an applied magnetic field from the magnet passes through all the thin films. A similar bearing in which the thin film assembly is mounted on the shaft and the magnet is part of the stator also can be constructed. 8 figs.

  2. Thin film superconductor magnetic bearings

    DOEpatents

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  3. Chiral atomically thin films

    NASA Astrophysics Data System (ADS)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm–1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  4. Chiral atomically thin films.

    PubMed

    Kim, Cheol-Joo; Sánchez-Castillo, A; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm(-1)) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra. PMID:26900756

  5. Biomimetic thin film deposition

    SciTech Connect

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  6. Advanced thin film thermocouples

    NASA Astrophysics Data System (ADS)

    Kreider, K. G.; Semancik, S.; Olson, C.

    1984-10-01

    The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

  7. Advanced thin film thermocouples

    NASA Technical Reports Server (NTRS)

    Kreider, K. G.; Semancik, S.; Olson, C.

    1984-01-01

    The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

  8. thin films as absorber

    NASA Astrophysics Data System (ADS)

    González, J. O.; Shaji, S.; Avellaneda, D.; Castillo, G. A.; Das Roy, T. K.; Krishnan, B.

    2014-09-01

    Photovoltaic structures were prepared using AgSb(S x Se1- x )2 as absorber and CdS as window layer at various conditions via a hybrid technique of chemical bath deposition and thermal evaporation followed by heat treatments. Silver antimony sulfo selenide thin films [AgSb(S x Se1- x )2] were prepared by heating multilayers of sequentially deposited Sb2S3/Ag dipped in Na2SeSO3 solution, glass/Sb2S3/Ag/Se. For this, Sb2S3 thin films were deposited from a chemical bath containing SbCl3 and Na2S2O3. Then, Ag thin films were thermally evaporated on glass/Sb2S3, followed by selenization by dipping in an acidic solution of Na2SeSO3. The duration of dipping was varied as 3, 4 and 5 h. Two different heat treatments, one at 350 °C for 20 min in vacuum followed by a post-heat treatment at 325 °C for 2 h in Ar, and the other at 350 °C for 1 h in Ar, were applied to the multilayers of different configurations. X-ray diffraction results showed the formation of AgSb(S x Se1- x )2 thin films as the primary phase and AgSb(S,Se)2 and Sb2S3 as secondary phases. Morphology and elemental detection were done by scanning electron microscopy and energy dispersive X-ray analysis. X-ray photoelectron spectroscopic studies showed the depthwise composition of the films. Optical properties were determined by UV-vis-IR transmittance and reflection spectral analysis. AgSb(S x Se1- x )2 formed at different conditions was incorporated in PV structures glass/FTO/CdS/AgSb(S x Se1- x )2/C/Ag. Chemically deposited post-annealed CdS thin films of various thicknesses were used as window layer. J- V characteristics of the cells were measured under dark and AM1.5 illumination. Analysis of the J- V characteristics resulted in the best solar cell parameters of V oc = 520 mV, J sc = 9.70 mA cm-2, FF = 0.50 and η = 2.7 %.

  9. Polycrystalline thin film photovoltaics

    NASA Astrophysics Data System (ADS)

    Zweibel, K.; Ullal, H. S.; Mitchell, R. L.

    Significant progress has recently been made towards improving the efficiencies of polycrystalline thin-film solar cells and modules using CuInSe2 and CdTe. The history of using CuInSe2 and CdTe for solar cells is reviewed. Initial outdoor stability tests of modules are encouraging. Progress in semiconductor deposition techniques has also been substantial. Both CuInSe2 and CdTe are positioned for commercialization during the 1990s. The major participants in developing these materials are described. The US DOE/SERI (Solar Energy Research Institute) program recognizes the rapid progress and important potential of polycrystalline thin films to meet ambitious cost and performance goals. US DOE/SERI is in the process of funding an initiative in this area with the goal of ensuring US leadership in the development of these technologies. The polycrystalline thin-film module development initiative, the modeling and stability of the devices, and health and safety issues are discussed.

  10. Thin film mechanics

    NASA Astrophysics Data System (ADS)

    Cooper, Ryan C.

    This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate

  11. Polycrystalline thin film photovoltaic technology

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  12. Center for thin film studies

    NASA Astrophysics Data System (ADS)

    Shannon, Robert P.; Gibson, Ursula J.

    1987-11-01

    This report covers the first year of operation of the URI Thin Film Center (TFC), and describes a diverse array of studies on thin-film materials, substrates, and their processing and analysis. Individual efforts are highlighted in sections on nucleation studies, ion-assisted deposition, Rutherford backscattering spectrometry, Brillouin scattering, a continuum theory of the evolution of structure in thin films, a study of polishing parameters relevant to the preparation of substrates, and the setup of a characterization facility for the Center.

  13. Thin film hydrogen sensor

    DOEpatents

    Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  14. Polycrystalline thin-films

    NASA Astrophysics Data System (ADS)

    Zweibel, K.; Mitchell, R.

    1986-02-01

    This annual report summarizes the status, accomplishments, and projected future research directions of the Polycrystalline Thin Film Task in the Photovoltaic Program Branch of the Solar Energy Research Institute's Solar Electric Research Division. Major subcontracted work in this area has concentrated on development of CuInSe2 and CdTe technologies. During FY 1985, major progress was achieved by subcontractors in: (1) developing a new, low-cost method of fabricating CuInSe2, and (2) improving the efficiency of CuInSe2 devices by about 10% (relative). The report also lists research planned to meet the Department of Energy's goals in these technologies.

  15. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  16. Host thin films incorporating nanoparticles

    NASA Astrophysics Data System (ADS)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  17. Thin film atomic hydrogen detectors

    NASA Technical Reports Server (NTRS)

    Gruber, C. L.

    1977-01-01

    Thin film and bead thermistor atomic surface recombination hydrogen detectors were investigated both experimentally and theoretically. Devices were constructed on a thin Mylar film substrate. Using suitable Wheatstone bridge techniques sensitivities of 80 microvolts/2x10 to the 13th power atoms/sec are attainable with response time constants on the order of 5 seconds.

  18. Thin film ion conducting coating

    DOEpatents

    Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  19. Ferromagnetic thin films

    DOEpatents

    Krishnan, Kannan M.

    1994-01-01

    A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

  20. Ferromagnetic thin films

    DOEpatents

    Krishnan, K.M.

    1994-12-20

    A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

  1. Polyimide Aerogel Thin Films

    NASA Technical Reports Server (NTRS)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  2. Polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Zweibel, K.; Mitchell, R.; Ullal, H.

    1987-02-01

    This annual report for fiscal year 1986 summarizes the status, accomplishments, and projected future research directions of the Polycrystalline Thin Film Task in the Photovoltaic Program Branch of the Solar Energy Research Institute's Solar Electric Research Division. Subcontracted work in this area has concentrated on the development of CuInSe2 and CdTe technologies. During FY 1986, major progress was achieved by subcontractors in (1) achieving 10.5% (SERI-verified) efficiency with CdTe, (2) improving the efficiency of selenized CuInSe2 solar cells to nearly 8%, and (3) developing a transparent contact to CdTe cells for potential use in the top cells of tandem structures.

  3. Thin-film microextraction.

    PubMed

    Bruheim, Inge; Liu, Xiaochuan; Pawliszyn, Janusz

    2003-02-15

    The properties of a thin sheet of poly(dimethylsiloxane) (PDMS) membrane as an extraction phase were examined and compared to solid-phase microextraction (SPME) PDMS-coated fiber for application to semivolatile analytes in direct and headspace modes. This new PDMS extraction approach showed much higher extraction rates because of the larger surface area to extraction-phase volume ratio of the thin film. Unlike the coated rod formats of SPME using thick coatings, the high extraction rate of the membrane SPME technique allows larger amounts of analytes to be extracted within a short period of time. Therefore, higher extraction efficiency and sensitivity can be achieved without sacrificing analysis time. In direct membrane SPME extraction, a linear relationship was found between the initial rate of extraction and the surface area of the extraction phase. However, for headspace extraction, the rates were somewhat lower because of the resistance to analyte transport at the sample matrix/headspace barrier. It was found that the effect of this barrier could be reduced by increasing either agitation, temperature, or surface area of the sample matrix/headspace interface. A method for the determination of PAHs in spiked lake water samples was developed based on the membrane PDMS extraction coupled with GC/MS. A linearity of 0.9960 and detection limits in the low-ppt level were found. The reproducibility was found to vary from 2.8% to 10.7%. PMID:12622398

  4. Increasing sp3 hybridized carbon atoms in germanium carbide films by increasing the argon ion energy and germanium content

    NASA Astrophysics Data System (ADS)

    Hu, C. Q.; Zheng, B.; Zhu, J. Q.; Han, J. C.; Zheng, W. T.; Guo, L. F.

    2010-04-01

    We have prepared germanium carbide (Ge1-xCx) films on Si(0 0 1) by radio frequency (RF) reactive sputtering a pure Ge(1 1 1) target in a CH4/Ar mixture discharge, and found that the sp3 hybridized carbon atoms in the Ge1-xCx film can be significantly increased in two ways. One is by increasing the Ge content via increasing the RF power during the film deposition, which can lead to a transition from sp2 C-C to sp3 C-Ge bonding in the film. Another is by increasing the Ar ion energy in a discharge Ar/CH4 gas by applying the negative bias voltage, which plays an important role in inducing the compressive stress in film. We find that when the compressive stress increases above a critical value of 2.2 GPa, an abrupt transition from sp2 C-C to sp3 C-C bonding occurs in the Ge1-xCx film, which is a consequence of energy minimization.

  5. Ultra-Low-Cost Room Temperature SiC Thin Films

    NASA Technical Reports Server (NTRS)

    Faur, Maria

    1997-01-01

    The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

  6. Interference Colors in Thin Films.

    ERIC Educational Resources Information Center

    Armstrong, H. L.

    1979-01-01

    Explains interference colors in thin films as being due to the removal, or considerable reduction, of a certain color by destructive inteference that results in the complementary color being seen. (GA)

  7. Thin film cell development workshop report

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.

    1991-01-01

    The Thin Film Development Workshop provided an opportunity for those interested in space applications of thin film cells to debate several topics. The unique characteristics of thin film cells as well as a number of other issues were covered during the discussions. The potential of thin film cells, key research and development issues, manufacturing issues, radiation damage, substrates, and space qualification of thin film cells were discussed.

  8. Thin-Film Power Transformers

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  9. Vapor deposition of thin films

    DOEpatents

    Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  10. Nano-Structured Silicon Thin Films for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    Taylor, P. Craig

    2008-03-01

    The current technology for thin-film silicon photovoltaic panels is based on hydrogenated amorphous silicon and related alloys, such as silicon-germanium and silicon-carbon. Currently there is great interest in using some form of thin-film silicon that includes nano-structured components. This interest is driven in part by the potential for decreased cost, increased efficiency, and increased stability. Also driving this interest is the abundance of silicon as an element and its lack of toxicity. I will review various structures that have been suggested, and discuss recent results on inhomogeneous films of hydrogenated amorphous silicon that contain nanocrystalline inclusions. In particular, I will describe the mechanisms for optical absorption, carrier transport and the role of defects.

  11. Calorimetry of epitaxial thin films.

    PubMed

    Cooke, David W; Hellman, F; Groves, J R; Clemens, B M; Moyerman, S; Fullerton, E E

    2011-02-01

    Thin film growth allows for the manipulation of material on the nanoscale, making possible the creation of metastable phases not seen in the bulk. Heat capacity provides a direct way of measuring thermodynamic properties of these new materials, but traditional bulk calorimetric techniques are inappropriate for such a small amount of material. Microcalorimetry and nanocalorimetry techniques exist for the measurements of thin films but rely on an amorphous membrane platform, limiting the types of films which can be measured. In the current work, ion-beam-assisted deposition is used to provide a biaxially oriented MgO template on a suspended membrane microcalorimeter in order to measure the specific heat of epitaxial thin films. Synchrotron x-ray diffraction showed the biaxial order of the MgO template. X-ray diffraction was also used to prove the high quality of epitaxy of a film grown onto this MgO template. The contribution of the MgO layer to the total heat capacity was measured to be just 6.5% of the total addenda contribution. The heat capacity of a Fe(.49)Rh(.51) film grown epitaxially onto the device was measured, comparing favorably to literature data on bulk crystals. This shows the viability of the MgO∕SiN(x)-membrane-based microcalorimeter as a way of measuring the thermodynamic properties of epitaxial thin films. PMID:21361612

  12. The Thin Oil Film Equation

    NASA Technical Reports Server (NTRS)

    Brown, James L.; Naughton, Jonathan W.

    1999-01-01

    A thin film of oil on a surface responds primarily to the wall shear stress generated on that surface by a three-dimensional flow. The oil film is also subject to wall pressure gradients, surface tension effects and gravity. The partial differential equation governing the oil film flow is shown to be related to Burgers' equation. Analytical and numerical methods for solving the thin oil film equation are presented. A direct numerical solver is developed where the wall shear stress variation on the surface is known and which solves for the oil film thickness spatial and time variation on the surface. An inverse numerical solver is also developed where the oil film thickness spatial variation over the surface at two discrete times is known and which solves for the wall shear stress variation over the test surface. A One-Time-Level inverse solver is also demonstrated. The inverse numerical solver provides a mathematically rigorous basis for an improved form of a wall shear stress instrument suitable for application to complex three-dimensional flows. To demonstrate the complexity of flows for which these oil film methods are now suitable, extensive examination is accomplished for these analytical and numerical methods as applied to a thin oil film in the vicinity of a three-dimensional saddle of separation.

  13. Annealing effects on the bonding structures, optical and mechanical properties for radio frequency reactive sputtered germanium carbide films

    NASA Astrophysics Data System (ADS)

    Hu, C. Q.; Zhu, J. Q.; Zheng, W. T.; Han, J. C.

    2009-01-01

    The effects of thermal annealing in vacuum on the bonding structures, optical and mechanical properties for germanium carbide (Ge 1- xC x) thin films, deposited by radio frequency (RF) reactive sputtering of pure Ge(1 1 1) target in a CH 4/Ar mixture discharge, are investigated. We find that there are no significant changes in the bonding structure of the films annealed below 300 °C. The fraction of Ge-H bonds for the film annealed at temperatures ( Ta) above 300 °C decreases, whereas that of C-H bonds show a decrease only when Ta exceeds 400 °C. The out-diffusion of hydrogen promotes the formation of Ge-C bonds at Ta above 400 °C and thus leads to a substantial increase in the compressive stress and hardness for the film. The refractive indices and optical gaps for Ge 1- xC x films are almost constant against Ta, which can be ascribed to the unchanged ratios of Ge/C and sp 2-C/sp 3-C concentrations. Furthermore, we also find that the excellent optical transmission for an antireflection Ge 1- xC x double-layer film on ZnS substrate is still maintained after annealing at 700 °C.

  14. Thin-film metal hydrides.

    PubMed

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis. PMID:18980236

  15. Thin film of biocompatible polysaccharides

    NASA Astrophysics Data System (ADS)

    Richert, Ludovic; Lavalle, Philippe; Schaaf, Pierre; Voegel, Jean-Claude; Picart, Catherine

    2003-03-01

    The layer-by-layer deposition method proposed by Decher et al. (1991) is a very simple and versatile method used to build thin films. These films are of interest for bioengineering because of their unique properties and of the possible insertion of bioactive molecules. We present here the peculiar properties of a new kind of film formed with natural biopolymers, namely hyaluronan (HA)and chitosan (CHI). The films may be used as biomimetic substrates to control bacterial and cell adhesion. These polysaccharides are of particular interest because they are biodegradable, non toxic, and can be found in various tissues. Hyaluronan is also a natural ligand for a numerous type of cells through the CD44 receptor. Chitosan has already largely been used for its biological and anti-microbial properties. (CHI/HA) films were built in acidic pH at different ionic strength. The buildup was followed in situ by optical waveguide lightmode spectroscopy (OWLS), quartz crystal microbalance, streaming potential measurements and atomic force microscopy. The kinetics of adsorption and desorption of the polyelectrolytes depended on the ionic strength. Small islands were initially present on the surface which grew by mutual coalescence until becoming a flat film. The films were around 200 nm in thickness. These results suggest that different types of thin films constituted of polysaccharides can be built on any type of surface. These films are currently investigated toward their cell adhesion and bacterial adhesion properties.

  16. (Thin films under chemical stress)

    SciTech Connect

    Not Available

    1990-01-01

    As stated above the purpose of this research is to enable workers in a variety of fields to understand the chemical and physical changes which take place when thin films (primarily organic films) are placed under chemical stress. This stress may occur because the film is being swelled by penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). These questions are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers, which might have unique functional properties. In the past year we have concentrated on the following objectives: (1) understanding how the two possible diffusion mechanisms contribute to the swelling of thin films of organic polymers place in solution, (2) identifying systems which are appropriate polymer media for the construction of composite membranes for use in aqueous environments, and (3) understanding the self-assembly process for long chain fatty acids at model surfaces. Progress in meeting each of these objectives will be described in this report. 4 figs.

  17. Thin-film forces in pseudoemulsion films

    SciTech Connect

    Bergeron, V.; Radke, C.J. |

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  18. Beryllium thin films for resistor applications

    NASA Technical Reports Server (NTRS)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  19. Thin films under chemical stress

    SciTech Connect

    Not Available

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  20. Rain erosion behavior of germanium carbide films grown on ZnS substrates

    NASA Astrophysics Data System (ADS)

    Mackowski, Jean-Marie; Cimma, B.; Pignard, R.; Colardelle, P.; Laprat, Patrice

    1992-12-01

    Thick germanium carbine films (GeC) are successfully grown on various Zinc Sulfide and Germanium substrates at temperatures up to 350 degree(s)C by two methods: Plasma Enhanced Chemical Vapor Deposition (PECVD) in gas mixtures of methane and germane and by Reactive Radio-Frequency Sputtering (RRFS) starting from a germanium target in a sputtering medium of methane and argon. The optical and mechanical properties of the GeC coatings depend on the composition determined by the deposition parameters. The refractive index at 633 nm varies from 4.9 to 4.3 for a carbon content ranging from 3 to 25% and the correlated refractive index in the 8 to 12 micrometers range is found to be between 3.96 and 3.1. For these coatings, the absorption coefficient is ranging from 270 to 40 cm-1. All films are amorphous in nature with domains ranging from 13 to 20 angstroms. The hydrogen content varies from 2 to 25% coming from C:H, Ge:H and C:Ge:H bonding. The XPS analysis shows the Ge:C precipitation kinetic for high deposition temperature or annealed films. The rain erosion resistance of GeC films and GeC with a protective diamond like-carbon (DLC) coating on top is measured for 1.2 mm water drop with an impact velocity ranging from 210 to 265 m/s on the Saab-Scania whirling-arm rig (Linkoping, Sweden).

  1. Thin film-coated polymer webs

    DOEpatents

    Wenz, Robert P.; Weber, Michael F.; Arudi, Ravindra L.

    1992-02-04

    The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

  2. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  3. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  4. Low work function, stable thin films

    DOEpatents

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2000-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  5. Investigation of defects in highly photosensitive germanosilicate thin films

    SciTech Connect

    Simmons-Potter, K.; Potter, B.G. Jr.; Warren, W.L.

    1997-02-01

    Germanosilicate glasses exhibit a significant photosensitive response which has been linked to the presence of oxygen-deficient germanium point defects in the glass structure. Based on this correlation, highly photosensitive thin films have been engineered which demonstrate the largest reported ultraviolet-induced refractive index perturbations (An) in an as-synthesized material. Our thin-film fabrication process avoids the use of hydrogen sensitizing treatments and, thus, yields stable films which retain their predisposition for large photosensitivity for over one year of storage. Understanding the nature of the defects in such films and their relationship to charge trapping and enhanced photosensitivity is of paramount importance in designing and optimizing the materials. Toward this end, our films have been studied using electron paramagnetic resonance (EPR), capacitance-voltage, and optical bleaching and absorption spectroscopies. We find experimental evidence suggesting a model in which a change in spin state and charge state of isolated paramagnetic neutral Ge dangling bonds form either diamagnetic positively or negatively charged Ge sites which are largely responsible for the charge trapping and photosensitivity in these thin films. We present experimental data and theoretical modeling to support our defect model and to show the relevance of the work.

  6. Thin Film Solid Lubricant Development

    NASA Technical Reports Server (NTRS)

    Benoy, Patricia A.

    1997-01-01

    Tribological coatings for high temperature sliding applications are addressed. A sputter-deposited bilayer coating of gold and chromium is investigated as a potential solid lubricant for protection of alumina substrates during sliding at high temperature. Evaluation of the tribological properties of alumina pins sliding against thin sputtered gold films on alumina substrates is presented.

  7. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, D.K.; Arnold, C. Jr.; Delnick, F.M.

    1996-12-31

    Novel hybrid thin film electrolytes, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1} cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  8. Hybrid thin-film amplifier

    NASA Technical Reports Server (NTRS)

    Cleveland, G.

    1977-01-01

    Miniature amplifier for bioelectronic instrumentation consumes only about 100 mW and has frequency response flat to within 0.5 dB from 0.14 to 450 Hz. Device consists of five thin film substrates, which contain eight operational amplifiers and seven field-effect transistor dice.

  9. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, Dora K.; Arnold, Jr., Charles; Delnick, Frank M.

    1996-01-01

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  10. Thin films and uses

    DOEpatents

    Baskaran, Suresh; Graff, Gordon L.; Song, Lin

    1998-01-01

    The invention provides a method for synthesizing a titanium oxide-containing film comprising the following steps: (a) preparing an aqueous solution of a titanium chelate with a titanium molarity in the range of 0.01M to 0.6M. (b) immersing a substrate in the prepared solution, (c) decomposing the titanium chelate to deposit a film on the substrate. The titanium chelate maybe decomposed acid, base, temperature or other means. A preferred method provides for the deposit of adherent titanium oxide films from C2 to C5 hydroxy carboxylic acids. In another aspect the invention is a novel article of manufacture having a titanium coating which protects the substrate against ultraviolet damage. In another aspect the invention provides novel semipermeable gas separation membranes, and a method for producing them.

  11. Polyimide thin-film dielectrics on ferroelectrics

    NASA Technical Reports Server (NTRS)

    Galiardi, R. V.

    1977-01-01

    Conducting layers of multi-layered thin-film ferroelectric device, such as is used in liquid crystal/ferroelectric display, can be electrically isolated using thin-film layer of polyimide. Ease of application and high electrical-breakdown strength allow dependable and economical means of providing dielectric for other thin-film microelectronic devices.

  12. Thin film materials and devices for resistive temperature sensing applications

    NASA Astrophysics Data System (ADS)

    Basantani, Hitesh A.

    Thin films of vanadium oxide (VOx) and hydrogenated amorphous silicon (a-Si:H) are the two dominant material systems used in resistive infrared radiation detectors (microbolometers) for sensing long wave infrared (LWIR) wavelengths in the 8--14 microm range. Typical thin films of VO x (x < 2) currently used in the bolometer industry have a magnitude of temperature coefficient of resistance (TCR) between 2%/K -- 3%/K. In contrast, thin films of hydrogenated germanium (SiGe:H) have |TCR| between 3%/K to 4%/K. Devices made from either of these materials have resulted in similar device performance with NETD ≈ 25 mK. The performance of the microbolometers is limited by the electronic noise, especially 1/f noise. Therefore, regardless of the choice of bolometer sensing material and read out circuitry, manufacturers are constantly striving to reduce 1/f noise while simultaneously increasing TCR to give better signal to noise ratios in their bolometers and ultimately, better image quality with more thermal information to the end user. In this work, thin films of VOx and hydrogenated germanium (Ge:H), having TCR values > 4 %/K are investigated as potential candidates for higher sensitivity next generation of microbolometers. Thin films of VO x were deposited by Biased Target Ion Beam Deposition (BTIBD) (˜85 nm thick). Electrical characterization of lateral resistor structures showed resistivity ranging from 104 O--cm to 2.1 x 104 O--cm, TCR varying from --4%/K to --5%/K, normalized Hooge parameter (alphaH/n) of 5 x 10 -21 to 5 x 10-18 cm3. Thin films of Ge:H were deposited by plasma enhanced chemical vapor deposition (PECVD) by incorporating an increasing amount of crystal fraction in the growing thin films. Thin films of Ge:H having a mixed phase, amorphous + nanocrystalline, having a |TCR| > 6 %/K were deposited with resistivity < 2,300 O--cm and a normalized Hooge's parameter 'alphaH/n' < 2 x 10-20 cm3. Higher TCR materials are desired, however, such materials have

  13. Evaluation of 1/f noise in prospective IR imaging thin films

    NASA Astrophysics Data System (ADS)

    Basantani, Hitesh A.; Saint John, David B.; Podraza, Nikolas J.; Jackson, Thomas N.; Horn, Mark W.

    2014-06-01

    Vanadium oxide (VOx) and hydrogenated silicon germanium (SixGe1-x) are the two predominant thin film material systems used as the active layer in resistive infrared imaging. Thin films of VOx used in microbolometers have a resistivity typically between 0.1 and 1 Ω-cm with a temperature coefficient of resistance, |TCR| between 1.4%/K to 2.4%/K, while SixGe1-x:H thin films have a resistivity between 200-4,000 Ω-cm with a |TCR| between 2.9%/K to 3.9%/K. Future devices may require higher TCR materials, however, higher TCR is loosely associated with higher resistivity and therefore also with high noise. This work compares 1/f noise of high resistivity VOx and Ge:H thin films having |TCR| < 3.6%/K. The high TCR thin films of VOx were found to be amorphous while, depending on the deposition conditions, the Ge:H thin films were either amorphous or mixed phase of amorphous + nanocrystalline. Evaluation of these VOx and Ge:H thin films indicates a prospects for a superior process-property relation of 1/f noise in Ge:H thin films in comparison with thin films of VOx.

  14. Phase Coarsening in Thin Films

    NASA Astrophysics Data System (ADS)

    Wang, K. G.; Glicksman, M. E.

    2015-08-01

    Phase coarsening (Ostwald ripening) phenomena are ubiquitous in materials growth processes such as thin film formation. The classical theory explaining late-stage phase coarsening phenomena was developed by Lifshitz and Slyozov, and by Wagner in the 1960s. Their theory is valid only for a vanishing volume fraction of the second phase in three dimensions. However, phase coarsening in two-dimensional systems is qualitatively different from that in three dimensions. In this paper, the many-body concept of screening length is reviewed, from which we derive the growth law for a `screened' phase island, and develop diffusion screening theory for phase coarsening in thin films. The coarsening rate constant, maximum size of phase islands in films, and their size distribution function will be derived from diffusion screening theory. A critical comparison will be provided of prior coarsening concepts and improvements derived from screening approaches.

  15. Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge2+xSb2Te5 (x = 0,1) thin films for phase-change memory

    NASA Astrophysics Data System (ADS)

    Cheng, Limin; Wu, Liangcai; Song, Zhitang; Rao, Feng; Peng, Cheng; Yao, Dongning; Liu, Bo; Xu, Ling

    2013-01-01

    The phase-change behavior and microstructure changes of N-doped Ge3Sb2Te5 [N-GST(3/2/5)] and Ge2Sb2Te5 [GST(2/2/5)] films during the phase transition from an amorphous to a crystalline phase were studied using in situ temperature-dependent sheet resistance measurements, X-ray diffraction, and transmission electron microscopy. The optical band gaps of N-GST(3/2/5) films are higher than that of GST(2/2/5) film in both the amorphous and face-centered-cubic (fcc) phases. Ge nitride formation by X-ray photoelectron spectroscopy analysis increased the optical band gap and suppressed crystalline grain growth, resulting in an increase in the crystallization temperature and resistance in the fcc phase. As a result, the Ge- and N-doped GST(2/2/5) composite films can be considered as a promising material for phase-change memory application because of improved thermal stability and reduced power consumption.

  16. Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge{sub 2+x}Sb{sub 2}Te{sub 5} (x = 0,1) thin films for phase-change memory

    SciTech Connect

    Cheng Limin; Wu Liangcai; Song Zhitang; Rao Feng; Peng Cheng; Yao Dongning; Liu Bo; Xu Ling

    2013-01-28

    The phase-change behavior and microstructure changes of N-doped Ge{sub 3}Sb{sub 2}Te{sub 5}[N-GST(3/2/5)] and Ge{sub 2}Sb{sub 2}Te{sub 5}[GST(2/2/5)] films during the phase transition from an amorphous to a crystalline phase were studied using in situ temperature-dependent sheet resistance measurements, X-ray diffraction, and transmission electron microscopy. The optical band gaps of N-GST(3/2/5) films are higher than that of GST(2/2/5) film in both the amorphous and face-centered-cubic (fcc) phases. Ge nitride formation by X-ray photoelectron spectroscopy analysis increased the optical band gap and suppressed crystalline grain growth, resulting in an increase in the crystallization temperature and resistance in the fcc phase. As a result, the Ge- and N-doped GST(2/2/5) composite films can be considered as a promising material for phase-change memory application because of improved thermal stability and reduced power consumption.

  17. Selective inorganic thin films

    SciTech Connect

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J.

    1997-04-01

    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  18. Thin film buried anode battery

    DOEpatents

    Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

    2009-12-15

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  19. Thin film concentrator panel development

    NASA Astrophysics Data System (ADS)

    Zimmerman, D. K.

    1982-07-01

    The development and testing of a rigid panel concept that utilizes a thin film reflective surface for application to a low-cost point-focusing solar concentrator is discussed. It is shown that a thin film reflective surface is acceptable for use on solar concentrators, including 1500 F applications. Additionally, it is shown that a formed steel sheet substrate is a good choice for concentrator panels. The panel has good optical properties, acceptable forming tolerances, environmentally resistant substrate and stiffeners, and adaptability to low to mass production rates. Computer simulations of the concentrator optics were run using the selected reflector panel design. Experimentally determined values for reflector surface specularity and reflectivity along with dimensional data were used in the analysis. The simulations provided intercept factor and net energy into the aperture as a function of aperture size for different surface errors and pointing errors. Point source and Sun source optical tests were also performed.

  20. Superconducting UBe 13 thin films

    NASA Astrophysics Data System (ADS)

    Quateman, J. H.; Tedrow, P. M.

    1985-12-01

    Of the known heavy fermion superconductors only UBe 13 can have a low resistivity ratio and still go superconducting. In addition, it is a line compound with a melting temperature of nearly twice that of the constituents. These facts make UBe 13 a promising choice for fabrication in thin film form. We have successfully made 2000 Å UBe 13 films by coevaporation of uranium and beryllium on 700°C substrates which were then heated in situ to 1100°C. These films were polycrystalline as shown by X-ray diffraction and have Tc's of 0.85 K, that of the bulk. The resistivity rise at approximately 2 K and the strong negative magnetoresistance were also of the same magnitude as that of the bulk, as were both the perpendicular and parallel critical fields. Thin films of UBe 13 will make more accessible tunneling and proximity effect experiments which can help elucidate the nature of the superconductivity of this compound.

  1. Quantitative assessment of molecular dynamics-grown amorphous silicon and germanium films on silicon (111)

    NASA Astrophysics Data System (ADS)

    Käshammer, Peter; Borgardt, Nikolai I.; Seibt, Michael; Sinno, Talid

    2016-09-01

    Molecular dynamics based on the empirical Tersoff potential was used to simulate the deposition of amorphous silicon and germanium on silicon(111) at various deposition rates and temperatures. The resulting films were analyzed quantitatively by comparing one-dimensional atomic density profiles to experimental measurements. It is found that the simulations are able to capture well the structural features of the deposited films, which exhibit a gradual loss of crystalline order over several monolayers. A simple mechanistic model is used to demonstrate that the simulation temperature may be used to effectively accelerate the surface relaxation processes during deposition, leading to films that are consistent with experimental samples grown at deposition rates many orders-of-magnitude slower than possible in a molecular dynamics simulation.

  2. Zinc oxide thin film acoustic sensor

    NASA Astrophysics Data System (ADS)

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Mansour, Hazim Louis; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah

    2013-12-01

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  3. Zinc oxide thin film acoustic sensor

    SciTech Connect

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah; Mansour, Hazim Louis

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  4. High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

    SciTech Connect

    Yong Liu

    2002-05-31

    Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H{sub 2}, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are reduced

  5. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  6. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  7. Thin film based plasmon nanorulers

    NASA Astrophysics Data System (ADS)

    Taylor, Alexander D.; Lu, Chang; Geyer, Scott; Carroll, D. L.

    2016-07-01

    In this work, isolated metal nanoparticles are supported on a dielectric thin film that is placed on a conducting plane. The optical scattering characteristics of these metal nanoparticles are directly correlated with the localized surface plasmon states of the nanoparticle—image particle dimer, formed in the conducting plane below. Quantification of plasmon resonance shifts can be directly correlated with the application of the plasmon nanoruler equation. This simple geometry shows that direct optical techniques can be used to resolve thickness variations in dielectrics of only a few nanometers.

  8. Thin film solar energy collector

    DOEpatents

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  9. Mechanical stresses and crystallization of lithium phosphorous oxynitride-coated germanium electrodes during lithiation and delithiation

    NASA Astrophysics Data System (ADS)

    Al-Obeidi, Ahmed; Kramer, Dominik; Mönig, Reiner; Thompson, Carl V.

    2016-02-01

    The evolution of mechanical stresses during the cycling of lithium phosphorous oxynitride (LiPON) coated germanium thin film electrodes was monitored using substrate curvature measurements. By coating germanium thin films with LiPON, morphology evolution, e.g. crack and island formation, can be strongly suppressed. LiPON-coated germanium thin film electrodes can retain their planar form during cycling, resulting in a clear and reproducible stress response originating primarily from the electrochemical processes occurring during lithiation and delithiation. Together with the electrochemical data, stress measurements were used to infer mechanisms underlying the alloying of lithium with germanium. The stress signatures associated with individual phases, crystallization, and amorphization of lithium-germanium alloys are reported and discussed.

  10. New devices using ferroelectric thin films

    SciTech Connect

    Land, C.E.; Butler, M.A.; Martin, S.J.

    1989-01-01

    Recent developments in the fabrication technologies of ferroelectric thin films in general and of PZT (lead zirconate titanate) and PLZT (lead lanthanum zirconate titanate) thin films in particular have suggested the feasibility of several new devices. Integrated optical devices for information processing and high-speed switching, high-density optical information processing and storage devices and spatial light modulators are some of the applications currently being investigated for these films. Ongoing studies of the longitudinal electrooptic effects and the photosensitivities of PZT and PLZT thin films have established the feasibility of erasable/rewritable optical memories with fast switching and potentially long lifetimes compared to current magneto-optic thin film devices. Some properties of PZT thin films and of new devices based on those properties are described in this paper. 15 refs., 5 figs., 1 tab.

  11. Crystalline silicon germanium films grown on crystalline silicon substrates by solid phase crystallization

    NASA Astrophysics Data System (ADS)

    Kojima, Yuji; Isomura, Masao

    2015-08-01

    We researched on crystalline silicon-germanium films (c-SiGe) for bottom cells of silicon-based multijunction solar cells. We conducted the epitaxial crystal growth of SiGe with approximately 75% Ge fraction due to solid phase crystallization (SPC) from amorphous silicon-germanium (a-SiGe) precursors on n-type (100) Si substrates. We evaluated the preparation conditions of a-SiGe precursors for the SPC epitaxial growth. The epitaxial growth was successfully conducted and (100)-oriented c-SiGe films were formed. The epitaxial growth was effectively promoted in the a-SiGe precursors prepared at the substrate temperature from 250 to 300 °C, but is not sufficiently promoted in the a-SiGe precursors prepared below 250 °C. The density of a-SiGe precursors is relatively low at the substrate temperature below 250 °C, and the low-density structures cause the impurity incorporation from the air-exposed surface. The impurities are probably the main cause of disturbance of the epitaxial growth. On the other hand, the random crystallization occurred in the SPC of the a-SiGe precursors prepared at 350 °C. The precursors have the slightly crystallized structure and are not suitable for the SPC.

  12. Electrostatic thin film chemical and biological sensor

    DOEpatents

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  13. Thin films of mixed metal compounds

    DOEpatents

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  14. Characteristics Of Vacuum Deposited Sucrose Thin Films

    NASA Astrophysics Data System (ADS)

    Ungureanu, F.; Predoi, D.; Ghita, R. V.; Vatasescu-Balcan, R. A.; Costache, M.

    Thin films of sucrose (C12H22O11) were deposited on thin cut glass substrates by thermal evaporation technique (p ~ 10-5 torr). The surface morphology was putted into evidence by FT-IR and SEM analysis. The experimental results confirm a uniform deposition of an adherent sucrose layer. The biological tests (e.g., cell morphology and cell viability evaluated by measuring mitochondrial dehydrogenise activity with MTT assay) confirm the properties of sucrose thin films as bioactive material. The human fetal osteoblast system grown on thin sucrose film was used for the determination of cell proliferation, cell viability and cell morphology studies.

  15. Cellulose triacetate, thin film dielectric capacitor

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  16. Cellulose triacetate, thin film dielectric capacitor

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1993-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  17. A monolithic thin film electrochromic window

    SciTech Connect

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. . Electro-Optics Technology Center); Wei, G. ); Yu, P.C. )

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  18. A monolithic thin film electrochromic window

    SciTech Connect

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K.; Wei, G.; Yu, P.C.

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  19. Preparation and Characterization of PZT Thin Films

    SciTech Connect

    Bose, A.; Sreemany, M.; Bhattacharyya, D. K.; Sen, Suchitra; Halder, S. K.

    2008-07-29

    In analogy with Piezoelectric Wafer Active Sensors (PWAS), Lead Zirconate Titanate (PZT) thin films also seem to be promising for Structural Health Monitoring (SHM) due to a number of reasons. Firstly, PZT thin films with well oriented domains show enhanced piezoelectric response. Secondly, PWAS requires comparatively large voltage leading to a demand for thin PZT films (<< {mu}m in thickness) for low voltage operation at {<=}10 V. This work focuses on two different aspects: (a) growing oriented PZT thin films in ferroelectric perovskite phase in the range of (80-150) nm thickness on epitaxial Si/Pt without a seed layer and (b) synthesizing perovskite phase in PZT thin films on Corning glass 1737 using a seed layer of TiO{sub x} (TiO{sub x} thickness ranging between 30 nm to 500 nm)

  20. Thin film bioreactors in space

    NASA Technical Reports Server (NTRS)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  1. Thin-film optical shutter

    NASA Astrophysics Data System (ADS)

    Matlow, S. L.

    1981-02-01

    The ideal solution to the excessive solar gain problem is an optical shutter, a device which switches from being highly transmissive to solar radiation to being highly reflective to solar radiation when a critical temperature is reached in the enclosure. The switching occurs because one or more materials in the device undergo a phase transition at the critical temperature. A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, was chosen as the one most likely to meet all of the requirements of the thin film optical shutter project (TFOS). The reason for this choice is explored. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a quantum mechanical method, the equilibrium bond length (EBL) theory, was developed. Some results of EBL theory are included.

  2. BDS thin film damage competition

    SciTech Connect

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  3. Wrinkle motifs in thin films

    PubMed Central

    Budrikis, Zoe; Sellerio, Alessandro L.; Bertalan, Zsolt; Zapperi, Stefano

    2015-01-01

    On length scales from nanometres to metres, partial adhesion of thin films with substrates generates a fascinating variety of patterns, such as ‘telephone cord’ buckles, wrinkles, and labyrinth domains. Although these patterns are part of everyday experience and are important in industry, they are not completely understood. Here, we report simulation studies of a previously-overlooked phenomenon in which pairs of wrinkles form avoiding pairs, focusing on the case of graphene over patterned substrates. By nucleating and growing wrinkles in a controlled way, we characterize how their morphology is determined by stress fields in the sheet and friction with the substrate. Our simulations uncover the generic behaviour of avoiding wrinkle pairs that should be valid at all scales. PMID:25758174

  4. Dynamic delamination of patterned thin films

    NASA Astrophysics Data System (ADS)

    Kandula, Soma S. V.; Tran, Phuong; Geubelle, Philippe H.; Sottos, Nancy R.

    2008-12-01

    We investigate laser-induced dynamic delamination of a patterned thin film on a substrate. Controlled delamination results from our insertion of a weak adhesion region beneath the film. The inertial forces acting on the weakly bonded portion of the film lead to stable propagation of a crack along the film/substrate interface. Through a simple energy balance, we extract the critical energy for interfacial failure, a quantity that is difficult and sometimes impossible to characterize by more conventional methods for many thin film/substrate combinations.

  5. Infrared radiation of thin plastic films.

    NASA Technical Reports Server (NTRS)

    Tien, C. L.; Chan, C. K.; Cunnington, G. R.

    1972-01-01

    A combined analytical and experimental study is presented for infrared radiation characteristics of thin plastic films with and without a metal substrate. On the basis of the thin-film analysis, a simple analytical technique is developed for determining band-averaged optical constants of thin plastic films from spectral normal transmittance data for two different film thicknesses. Specifically, the band-averaged optical constants of polyethylene terephthalate and polyimide were obtained from transmittance measurements of films with thicknesses in the range of 0.25 to 3 mil. The spectral normal reflectance and total normal emittance of the film side of singly aluminized films are calculated by use of optical constants; the results compare favorably with measured values.

  6. AES analysis of barium fluoride thin films

    NASA Astrophysics Data System (ADS)

    Kashin, G. N.; Makhnjuk, V. I.; Rumjantseva, S. M.; Shchekochihin, Ju. M.

    1993-06-01

    AES analysis of thin films of metal fluorides is a difficult problem due to charging and decomposition of such films under electron bombardment. We have developed a simple algorithm for a reliable quantitative AES analysis of metal fluoride thin films (BaF 2 in our work). The relative AES sensitivity factors for barium and fluorine were determined from BaF 2 single-crystal samples. We have investigated the dependence of composition and stability of barium fluoride films on the substrate temperature during film growth. We found that the instability of BaF 2 films grown on GaAs substrates at high temperatures (> 525°C) is due to a loss of fluorine. Our results show that, under the optimal electron exposure conditions, AES can be used for a quantitative analysis of metal fluoride thin films.

  7. Thin film nitinol microstent for aneurysm occlusion.

    PubMed

    Chun, Youngjae; Levi, Daniel S; Mohanchandra, K P; Vinuela, Fernando; Vinuela, Fernando; Carman, Gregory P

    2009-05-01

    Thin film nitinol produced by sputter deposition was used in the design of microstents intended to treat small vessel aneurysms. Thin film microstents were fabricated by "hot-target" dc sputter deposition. Both stress-strain curves and differential scanning calorimetry curves were generated for the film used to fabricate stents. The films used for stents had an A(f) temperature of approximately 36 degrees C allowing for body activated response from a microcatheter. The 10 microm film was only slightly radio-opaque; thus, a Td marker was attached to the stents to guide fluoroscopic delivery. Thin film microstents were tested in a flow loop with and without nitinol support skeletons to give additional radial support. Stents could be compressed into and easily delivered with <3 Fr catheters. Theoretical frictional and wall drag forces on a thin film nitinol small vessel vascular stent were calculated, and the radial force exerted by thin film stents was evaluated theoretically and experimentally. In vivo studies in swine confirmed that thin film nitinol microstents could be deployed accurately and consistently in the swine cranial vasculature. PMID:19388784

  8. Method of producing thin cellulose nitrate film

    DOEpatents

    Lupica, S.B.

    1975-12-23

    An improved method for forming a thin nitrocellulose film of reproducible thickness is described. The film is a cellulose nitrate film, 10 to 20 microns in thickness, cast from a solution of cellulose nitrate in tetrahydrofuran, said solution containing from 7 to 15 percent, by weight, of dioctyl phthalate, said cellulose nitrate having a nitrogen content of from 10 to 13 percent.

  9. Rapid thermal chemical vapor deposition of in situ boron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications

    NASA Astrophysics Data System (ADS)

    Li, V. Z.-Q.; Mirabedini, M. R.; Kuehn, R. T.; Wortman, J. J.; Öztürk, M. C.; Batchelor, D.; Christensen, K.; Maher, D. M.

    1997-12-01

    In situ boron-doped polycrystalline Si1-xGex (x>0.4) films have been formed on the thermally grown oxides in a rapid thermal chemical vapor deposition processor using SiH4-GeH4-B2H6-H2 gas system. Our results showed that in situ boron-doped Si1-xGex films can be directly deposited on the oxide surface, in contrast to the rapid thermal deposition of undoped silicon-germanium (Si1-xGex) films on oxides which is a partially selective process and requires a thin silicon film pre-deposition to form a continuous film. For the in situ boron-doped Si1-xGex films, we observed that with the increase of the germane percentage in the gas source, the Ge content and the deposition rate of the film are increased, while its resistivity is decreased down to 0.66 mΩ cm for a Ge content of 73%. Capacitance-voltage characteristics of p-type metal-oxide-semiconductor capacitors with p+-Si1-xGex gates showed negligible polydepletion effect for a 75 Å gate oxide, indicating that a high doping level of boron at the poly-Si1-xGex/oxide interface was achieved.

  10. Optical information storage in PLZT thin films

    SciTech Connect

    Land, C.E.

    1989-01-01

    The feasibility of storing and reading high density optical information in lead zirconate titanate (PZT) and in lead lanthanum zirconate titanate (PLZT) thin films depends on both the longitudinal electrooptic coefficients and the photosensitivities of the films. This paper describes the methods used to measure both the longitudinal electrooptic effects and the photosensitivities of the thin films. The results of these measurements were used to evaluate a longitudinal quadratic electrooptic R coefficient, a linear electrooptic r/sub c/ coefficient and the wavelength dependence of the photosensitivity of a composition of PZT polycrystalline thin film. The longitudinal electrooptic R and r/sub c/ coefficients are about an order of magnitude less than the transverse R and R/sub c/ coefficients of the bulk ceramics of similar compositions. This is attributed to clamping of the film by the rigid substrate. The large birefringence after poling (>10/sup /minus/2/) suggests that the optic axes of the films are preferentially oriented normal to the film surface. The techniques used for evaluating the photosensitivities of the thin films are based on measuring the photocurrent generated rather than the reduction in coercive voltage (used previously for bulk ceramics) when the film is exposed to light. The thin film photosensitivities appear to be about three orders of magnitude higher than those of bulk ceramics of similar compositions. 14 refs., 12 figs., 1 tab.

  11. Thin film solar cell module

    SciTech Connect

    Gay, R.R.

    1987-01-20

    A thin film solar cell module is described comprising a first solar cell panel containing an array of solar cells consisting of a TFS semiconductor sandwiched between a transparent conductive zinc oxide layer and a transparent conductive layer selected from the group consisting of tin oxide, indium tin oxide, and zinc oxide deposited upon a transparent superstrate, and a second solar cell panel containing an array of solar cells consisting of a CIS semiconductor layer sandwiched between a zinc oxide semiconductor layer and a conductive metal layer deposited upon an insulating substrate. The zinc oxide semiconductor layer contains a first relatively thin layer of high resistivity zinc oxide adjacent the CIS semiconductor and a second relatively thick layer of low resistivity zinc oxide overlying the high resistivity zinc oxide layer. The transparent conductive zinc oxide layer of the first panel faces the low resistivity zinc oxide layer of the second panel, the first and second panels being positioned optically in series and separated by a transparent insulating layer.

  12. VUV thin films, chapter 7

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.

    1993-01-01

    The application of thin film technology to the vacuum ultraviolet (VUV) wavelength region from 120 nm to 230 nm has not been fully exploited in the past because of absorption effects which complicate the accurate determination of the optical functions of dielectric materials. The problem therefore reduces to that of determining the real and imaginary parts of a complex optical function, namely the frequency dependent refractive index n and extinction coefficient k. We discuss techniques for the inverse retrieval of n and k for dielectric materials at VUV wavelengths from measurements of their reflectance and transmittance. Suitable substrate and film materials are identified for application in the VUV. Such applications include coatings for the fabrication of narrow and broadband filters and beamsplitters. The availability of such devices open the VUV regime to high resolution photometry, interferometry and polarimetry both for space based and laboratory applications. This chapter deals with the optics of absorbing multilayers, the determination of the optical functions for several useful materials, and the design of VUV multilayer stacks as applied to the design of narrow and broadband reflection and transmission filters and beamsplitters. Experimental techniques are discussed briefly, and several examples of the optical functions derived for selected materials are presented.

  13. Synthesis of periodic mesoporous silica thin films

    SciTech Connect

    Anderson, M.T.; Martin, J.E.; Odinek, J.G.; Newcomer, P.

    1996-06-01

    We have synthesized periodic mesoporous silica thin films from homogeneous solutions. To synthesize the films, a thin layer of a pH 7 micellar coating solution that contains TMOS (tetramethoxysilane) is dip or spin-coated onto Si wafers, borosilicate glass, or quartz substrates. NH3 gas is diffused into the solution and causes rapid hydrolysis and condensation of the TMOS and the formation of periodic mesoporous thin films within 10 seconds. Combination of homogenous solutions and rapid product formation maximizes the concentration of the desired product and provides a controlled, predictable microstructure. The films have been made continuous and crack-free by optimizing initial silica concentration and film thickness. The films are being evaluated as high surface area, size-selective coatings for surface acoustic wave (SAW) sensors.

  14. Flexible thin metal film thermal sensing system

    NASA Technical Reports Server (NTRS)

    Thomsen, Donald L. (Inventor)

    2010-01-01

    A flexible thin metal film thermal sensing system is provided. A self-metallized polymeric film has a polymeric film region and a metal surface disposed thereon. A layer of electrically-conductive metal is deposited directly onto the self-metallized polymeric film's metal surface. Coupled to at least one of the metal surface and the layer of electrically-conductive metal is a device/system for measuring an electrical characteristic associated therewith as an indication of temperature.

  15. Macro stress mapping on thin film buckling

    SciTech Connect

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-11-06

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.

  16. Surface roughness evolution of nanocomposite thin films

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; Hosson, J. Th. M. de

    2009-01-01

    An analysis of dynamic roughening and smoothening mechanisms of thin films grown with pulsed-dc magnetron sputtering is presented. The roughness evolution has been described by a linear stochastic equation, which contains the second- and fourth-order gradient terms. Dynamic smoothening of the growing interface is explained by ballistic effects resulting from impingements of ions to the growing thin film. These ballistic effects are sensitive to the flux and energy of impinging ions. The predictions of the model are compared with experimental data, and it is concluded that the thin film roughness can be further controlled by adjusting waveform, frequency, and width of dc pulses.

  17. Photonics applications of nanostructured thin films

    NASA Astrophysics Data System (ADS)

    Kennedy, Scott Ronald

    Using an advanced thin film fabrication technique known as Glancing Angle Deposition (GLAD), it is possible to fabricate unique thin film nanostructures with characteristic dimensions on the order of a wavelength of light. By tailoring the morphologies of the films, they can be designed to exhibit particular optical properties that can be customized through advanced substrate motion and highly oblique flux incidence angles. In applications to photonics, controlling the flow of light for a specified task, GLAD thin films can be fabricated to provide the ability to manipulate incident light through controlled interactions of optical frequency electromagnetic radiation with the thin film nanostructures. Tetragonal square spiral photonic band gap crystals, a new class of periodic dielectric material that is characterized by the elimination of the density of states for frequencies lying in the stop gap of the crystal, can be fabricated using GLAD in a virtual single step process. The design and fabrication of these unique devices has been performed and the resultant crystals characterized in terms of optical response with respect to forbidden propagation modes, material properties, and advanced deposition techniques used to improve the overall structure. Chiral or helical thin films deposited using GLAD were also investigated, and have been shown to exhibit optical activity and circular birefringence due to their inherent structural anisotropy. It has been shown that the addition of nematic liquid crystals (LCs) to chiral thin films enhances the overall device performance due to order induced in the LCs by the film structure. This effect was investigated for a variety of materials and film structures. Finally, by developing a modified GLAD technique whereby the deposited film porosity is controlled through the angle of flux incidence, porous broadband antireflection coatings were produced. Using an appropriate effective medium theory to describe the index of refraction

  18. Demonstration of ultra-thin buried oxide germanium-on-insulator MOSFETs by direct wafer bonding and polishing techniques

    NASA Astrophysics Data System (ADS)

    Zheng, Zejie; Yu, Xiao; Xie, Min; Cheng, Ran; Zhang, Rui; Zhao, Yi

    2016-07-01

    The ultra-thin body and ultra-thin buried-oxide (UTBB) Germanium-on-Insulator (GeOI) substrates have been fabricated by direct wafer bonding and polishing techniques. The Ge and BOX layer thicknesses are as thin as 9 and 13 nm, respectively. The UTBB GeOI substrates exhibit superior crystal quality (similar to the bulk single crystalline Ge) and sufficiently reduced surface roughness. As a result, the Hall hole mobility of UTBB GeOI reaches 1330 cm2/V s with a carrier concentration of 2 × 1016 cm-3. The inversion mode UTBB GeOI nMOSFETs have also been demonstrated with suppressed mobility degradation during Ge layer thinning, indicating the feasibility of this GeOI substrate formation technique in future CMOS technologies.

  19. Passivation Effects in Copper Thin Films

    SciTech Connect

    Wiederhirn, G.; Nucci, J.; Richter, G.; Arzt, E.; Balk, T. J.; Dehm, G.

    2006-02-07

    We studied the influence of a 10 nm AlxOy passivation on the stress-temperature behavior of 100 nm and 1 {mu}m thick Cu films. At low temperatures, the passivation induces a large tensile stress increase in the 100 nm film; however, its effect on the 1 {mu}m film is negligible. At high temperatures, the opposite behavior is observed; while the passivation does not change the 100 nm film behavior, it strengthens the 1 {mu}m film by driving it deeper into compression. These observations are explained in light of a combination of constrained diffusional creep and dislocation dynamics unique to ultra-thin films.

  20. Research on Advanced Thin Film Batteries

    SciTech Connect

    Goldner, Ronald B.

    2003-11-24

    During the past 7 years, the Tufts group has been carrying out research on advanced thin film batteries composed of a thin film LiCo02 cathode (positive electrode), a thin film LiPON (lithium phosphorous oxynitride) solid electrolyte, and a thin film graphitic carbon anode (negative electrode), under grant DE FG02-95ER14578. Prior to 1997, the research had been using an rfsputter deposition process for LiCoOi and LiPON and an electron beam evaporation or a controlled anode arc evaporation method for depositing the carbon layer. The pre-1997 work led to the deposition of a single layer cell that was successfully cycled for more than 400 times [1,2] and the research also led to the deposition of a monolithic double-cell 7 volt battery that was cycled for more than 15 times [3]. Since 1997, the research has been concerned primarily with developing a research-worthy and, possibly, a production-worthy, thin film deposition process, termed IBAD (ion beam assisted deposition) for depositing each ofthe electrodes and the electrolyte of a completely inorganic solid thin film battery. The main focus has been on depositing three materials - graphitic carbon as the negative electrode (anode), lithium cobalt oxide (nominally LiCoCb) as the positive electrode (cathode), and lithium phosphorus oxynitride (LiPON) as the electrolyte. Since 1998, carbon, LiCoOa, and LiPON films have been deposited using the IBAD process with the following results.

  1. Performance Characterization of Monolithic Thin Film Resistors

    NASA Astrophysics Data System (ADS)

    Yin, Rong

    Thin film resistors have a large resistance range and stable performance under high temperature operating condition. Thin film resistors trimmed by laser beam are able to achieve very high precision on resistance value. As a result, thin film resistors have been widely used to improve the performance of integrated circuits such as operational amplifier, analog-to-digital (A/D) and digital -to-analog (D/A) converters, etc. In this dissertation, a new class of thin film resistors, silicon chrome (SiCr) thin film resistors, has been investigated at length. From thin film characterization to aging behavior modelling, we have carried out a series of engineering activities. The characteristics of the SiCr thin film incorporated into three bipolar processes were first determined. After laser trimming, we have measured a couple of physical parameters of the SiCr film in the heat affected zone (HAZ). This is the first time the sheet resistance and the temperature coefficient of resistance (TCR) of thin film in the HAZ have been characterized. Both thermal and d.c. load accelerated aging tests were performed. The test structures were subjected to the aging for 1000 hours. Based on the test data, we not only evaluated the classical thermal aging model for untrimmed thin film resistors, but also established several empirical thermal aging models for trimmed resistors and d.c. load aging models for both trimmed and untrimmed thin film resistors. All the experiments were carried out for both conventional bar resistors and our new Swiss Cheese (SC) resistors. For the first time, the performance of laser trimmed SC resistors, which was experimentally evaluated, shown a clear superiority over that of trimmed bar resistors. Besides these experiments, we have examined different die attach techniques and their effects on thin film resistors. Also, we have developed a number of hardware systems and software tools, such as a temperature controller, d.c. current source, temperature

  2. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

    1995-01-01

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  3. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

    1995-12-05

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

  4. Ferromagnetic properties of fcc Gd thin films

    SciTech Connect

    Bertelli, T. P. Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y.

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  5. Thin film production method and apparatus

    DOEpatents

    Loutfy, Raouf O.; Moravsky, Alexander P.; Hassen, Charles N.

    2010-08-10

    A method for forming a thin film material which comprises depositing solid particles from a flowing suspension or aerosol onto a filter and next adhering the solid particles to a second substrate using an adhesive.

  6. Thermally tunable ferroelectric thin film photonic crystals.

    SciTech Connect

    Lin, P. T.; Wessels, B. W.; Imre, A.; Ocola, L. E.; Northwestern Univ.

    2008-01-01

    Thermally tunable PhCs are fabricated from ferroelectric thin films. Photonic band structure and temperature dependent diffraction are calculated by FDTD. 50% intensity modulation is demonstrated experimentally. This device has potential in active ultra-compact optical circuits.

  7. Mechanical Properties of Silicon Carbonitride Thin Films

    NASA Astrophysics Data System (ADS)

    Peng, Xiaofeng; Hu, Xingfang; Wang, Wei; Song, Lixin

    2003-02-01

    Silicon carbonitride thin films were synthesized by reactive rf sputtering a silicon carbide target in nitrogen and argon atmosphere, or sputtering a silicon nitride target in methane and argon atmosphere, respectively. The Nanoindentation technique (Nanoindenter XP system with a continuous stiffness measurement technique) was employed to measure the hardness and elastic modulus of thin films. The effects of sputtering power on the mechanical properties are different for the two SiCN thin films. With increasing sputtering power, the hardness and the elastic modulus decrease for the former but increase for the latter. The tendency is similar to the evolution trend of Si-C bonds in SiCN materials. This reflects that Si-C bonds provide greater hardness for SiCN thin films than Si-N and C-N bonds.

  8. Highly stretchable wrinkled gold thin film wires

    NASA Astrophysics Data System (ADS)

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D.; Khine, Michelle

    2016-02-01

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  9. Recent developments in thin film solar cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    The present status of the development of thin film solar cells is reviewed, with emphasis on important areas for further research. The following aperture-area efficiencies were measured for thin film modules: a-Si:H, 9.8 percent, 933 sq cm; CuIn(Ga)Se2, 11.1 percent, 938 sq cm; and CdTe, 7.3 percent, 838 sq cm. CuIn(Ga)Se2 cells and modules demonstrated excellent efficiencies and stability. The cost advantage of thin film modules and the higher efficiency and improved stability resulting from multijunctions are shown. Engineering solutions are found to minimize light-induced degradation of a-Si:H solar cells. CdTe cells and modules, and cleaved epitaxial thin film III-V compound cells showed remarkable efficiencies.

  10. Microstructure Related Properties of Optical Thin Films.

    NASA Astrophysics Data System (ADS)

    Wharton, John James, Jr.

    Both the optical and physical properties of thin film optical interference coatings depend upon the microstructure of the deposited films. This microstructure is strongly columnar with voids between the columns. Computer simulations of the film growth process indicate that the two most important factors responsible for this columnar growth are a limited mobility of the condensing molecules and self-shadowing by molecules already deposited. During the vacuum deposition of thin films, the microstructure can be influenced by many parameters, such as substrate temperature and vacuum pressure. By controlling these parameters and introducing additional ones, thin film coatings can be improved. In this research, ultraviolet irradiation and ion bombardment were examined as additional parameters. Past studies have shown that post-deposition ultraviolet irradiation can be used to relieve stress and reduce absorption in the far ultraviolet of silicon dioxide films. Ion bombardment has been used to reduce stress, improve packing density, and increase resistance to moisture penetration. Three refractory oxide materials commonly used in thin film coatings were studied; they are silicon dioxide, titanium dioxide, and zirconium dioxide. Both single-layer films and narrowband filters made of these materials were examined. A 1000-watt mercury-xenon lamp was used to provide ultraviolet irradiation. An inverted magnetron ion source was used to produce argon and oxygen ions. Ultraviolet irradiation was found to reduce the absorption and slightly increase the index of refraction in zirconium oxide films. X-ray diffraction analysis revealed that ultraviolet irradiation caused titanium oxide films to become more amorphous; their absorption in the ultraviolet was slightly reduced. No changes were noted in film durability. Ion bombardment enhanced the tetragonal (lll) peak of zirconium oxide but increased the absorption of both zirconium oxide and titanium oxide films. The titanium oxide

  11. Review of CdO thin films

    NASA Astrophysics Data System (ADS)

    Chandiramouli, R.; Jeyaprakash, B. G.

    2013-02-01

    Cadmium Oxide (CdO) thin film is one of the first transparent conducting oxide semiconductors. Its excellent optical and electronic properties have made CdO a promising material for flat panel displays. In this article, we provide a comprehensive review of the state-of-the-art research activities related to the 'preparation-property-application' triangle of CdO thin films.

  12. Thin-film reliability and engineering overview

    NASA Technical Reports Server (NTRS)

    Ross, R. G., Jr.

    1984-01-01

    The reliability and engineering technology base required for thin film solar energy conversions modules is discussed. The emphasis is on the integration of amorphous silicon cells into power modules. The effort is being coordinated with SERI's thin film cell research activities as part of DOE's Amorphous Silicon Program. Program concentration is on temperature humidity reliability research, glass breaking strength research, point defect system analysis, hot spot heating assessment, and electrical measurements technology.

  13. Epitaxial thin film growth in outer space

    NASA Technical Reports Server (NTRS)

    Ignatiev, Alex; Chu, C. W.

    1988-01-01

    A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.

  14. Advances in CZTS thin films and nanostructured

    NASA Astrophysics Data System (ADS)

    Ali, N.; Ahmed, R.; Bakhtiar-Ul-Haq; Shaari, A.

    2015-06-01

    Already published data for the optical band gap (Eg) of thin films and nanostructured copper zinc tin sulphide (CZTS) have been reviewed and combined. The vacuum (physical) and non-vacuum (chemical) processes are focused in the study for band gap comparison. The results are accumulated for thin films and nanostructured in different tables. It is inferred from the re- view that the nanostructured material has plenty of worth by engineering the band gap for capturing the maximum photons from solar spectrum.

  15. Thin wetting film lensless imaging

    NASA Astrophysics Data System (ADS)

    Allier, C. P.; Poher, V.; Coutard, J. G.; Hiernard, G.; Dinten, J. M.

    2011-03-01

    Lensless imaging has recently attracted a lot of attention as a compact, easy-to-use method to image or detect biological objects like cells, but failed at detecting micron size objects like bacteria that often do not scatter enough light. In order to detect single bacterium, we have developed a method based on a thin wetting film that produces a micro-lens effect. Compared with previously reported results, a large improvement in signal to noise ratio is obtained due to the presence of a micro-lens on top of each bacterium. In these conditions, standard CMOS sensors are able to detect single bacterium, e.g. E.coli, Bacillus subtilis and Bacillus thuringiensis, with a large signal to noise ratio. This paper presents our sensor optimization to enhance the SNR; improve the detection of sub-micron objects; and increase the imaging FOV, from 4.3 mm2 to 12 mm2 to 24 mm2, which allows the detection of bacteria contained in 0.5μl to 4μl to 10μl, respectively.

  16. Microstructural evolution of tungsten oxide thin films

    NASA Astrophysics Data System (ADS)

    Hembram, K. P. S. S.; Thomas, Rajesh; Rao, G. Mohan

    2009-10-01

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 °C were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a "instability wheel" model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  17. Printable CIGS thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fan, Xiaojuan

    2014-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film cells have been considered as the most promising alternatives to silicon solar cells because of their high photo-electricity efficiency, reliability, and stability. However, many fabrication of CIGS thin film are based on vacuum processes such as evaporation sputtering techniques which are not cost efficient. This work develops a method using paste or ink liquid spin-coated on glass that would be to conventional ways in terms of cost effective, non-vacuum needed, quick processing. A mixture precursor was prepared by dissolving appropriate amounts of chemicals. After the mixture solution was cooled, a viscous paste prepared and ready for spin-coating process. A slight bluish CIG thin film substrate was then put in a tube furnace with evaporation of metal Se by depositing CdS layer and ZnO nanoparticle thin film coating to a solar cell fabrication. Structure, absorption spectrum, and photo-conversion efficiency for the as-grown CIGS thin film solar cell under study.

  18. Printable CIGS thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fan, Xiaojuan

    2013-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film solar cells have been considered as the most promising alternatives to crystalline silicon solar cells because of their high photo-electricity conversion efficiency, reliability, and stability. However, many fabrication methods of CIGS thin film are based on vacuum processes such as evaporation and sputtering techniques which are not cost efficient. This work develops a solution method using paste or ink liquid spin-coated on glass that would be competitive to conventional ways in terms of cost effective, non-vacuum needed, and quick processing. A mixture precursor was prepared by dissolving appropriate amounts of composition chemicals. After the mixture solution was cooled, a viscous paste was prepared and ready for spin-coating process. A slight bluish CIG thin film on substrate was then put in a tube furnace with evaporation of metal Se followed by depositing CdS layer and ZnO nanoparticle thin film coating to complete a solar cell fabrication. Structure, absorption spectrum, and photo-electricity conversion efficiency for the as-grown CIGS thin film solar cell are under study.

  19. Laser processing for thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Compaan, Alvin D.

    1995-04-01

    Over the past decade major advances have occurred in the field of thin- film photovoltaics (PV) with many of them a direct consequence of the application of laser processing. Improved cell efficiencies have been achieved in crystalline and polycrystalline Si, in hydrogenated amorphous silicon, and in two polycrystalline thin-film materials. The use of lasers in photovoltaics includes laser hole drilling for emitter wrap-through, laser trenching for buried bus lines, and laser texturing of crystalline and polycrystalline Si cells. In thin-film devices, laser scribing is gaining increased importance for module interconnects. Pulsed laser recrystallization of boron-doped hydrogenated amorphous silicon is used to form highly conductive p-layers in p-i-n amorphous silicon cells and in thin-film transistors. Optical beam melting appears to be an attractive method for forming metal semiconductor alloys for contact formation. Finally, pulsed lasers are used for deposition of the entire semiconductor absorber layer in two types of polycrystalline thin-film cells-those based on copper indium diselenide and those based on cadmium telluride. In our lab we have prepared and studied heavily doped polycrystalline silicon thin films and also have used laser physical vapor deposition (LPVD) to prepare 'all-LPVD' CdS/CdTe solar cells on glass with efficiencies tested at NREL at 10.5%. LPVD is highly flexible and ideally suited for prototyping PV cells using ternary or quaternary alloys and for exploring new dopant combinations.

  20. Carbon Nanotube Thin-Film Antennas.

    PubMed

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of <10 ohm/sq is needed to achieve a 10 dB return loss in the unbalanced antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed. PMID:27454334

  1. Anomalous hopping conduction in nanocrystalline/amorphous composites and amorphous semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Kakalios, James; Bodurtha, Kent

    Composite nanostructured materials consisting of nanocrystals (nc) embedded within a thin film amorphous matrix can exhibit novel opto-electronic properties. Composite films are synthesized in a dual-chamber co-deposition PECVD system capable of producing nanocrystals of material A and embedding then within a thin film matrix of material B. Electronic conduction in composite thin films of hydrogenated amorphous silicon (a-Si:H) containing nc-germanium or nc-silicon inclusions, as well as in undoped a-Si:H, does not follow an Arrhenius temperature dependence, but rather is better described by an anomalous hopping expression (exp[-(To/T)3/4) , as determined from the ``reduced activation energy'' proposed by Zabrodskii and Shlimak. This temperature dependence has been observed in other thin film resistive materials, such as ultra-thin disordered films of Ag, Bi, Pb and Pd; carbon-black polymer composites; and weakly coupled Au and ZnO quantum dot arrays. There is presently no accepted theoretical understanding of this expression. The concept of a mobility edge, accepted for over four decades, appears to not be necessary to account for charge transport in amorphous semiconductors. Supported by NSF-DMR and the Minnesota Nano Center.

  2. Correlation between optical properties and chemical composition of sputter-deposited germanium oxide (GeOx) films

    NASA Astrophysics Data System (ADS)

    Murphy, N. R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, C. V.

    2014-05-01

    Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50-1.00, where the films become GeO2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

  3. Thin-Film Nanocapacitor and Its Characterization

    ERIC Educational Resources Information Center

    Hunter, David N.; Pickering, Shawn L.; Jia, Dongdong

    2007-01-01

    An undergraduate thin-film nanotechnology laboratory was designed. Nanocapacitors were fabricated on silicon substrates by sputter deposition. A mask was designed to form the shape of the capacitor and its electrodes. Thin metal layers of Au with a 80 nm thickness were deposited and used as two infinitely large parallel plates for a capacitor.…

  4. Thin transparent films formed from powdered glass

    NASA Technical Reports Server (NTRS)

    1965-01-01

    Glass film less than five mils thick is formed from powdered glass dispersed in an organic liquid, deposited on a substrate, and fused into place. The thin films can be cut and shaped for contact lenses, optical filters and insulating layers.

  5. An Extension of Thin Film Optics

    NASA Astrophysics Data System (ADS)

    Apell, P.

    1985-10-01

    The classical McIntyre formula for p-polarized light incident on a thin film on a substrate is extended in general terms to include a realistic description of the interfaces and the possible excitation of plasma waves in the film. An earlier extension is critized and criteria are given for when the classical result is applicable.

  6. Thin films, asphaltenes, and reservoir wettability

    SciTech Connect

    Kaminsky, R.; Bergeron, V.; Radke, C.J. |

    1993-04-01

    Reservoir wettability impacts the success of oil recovery by waterflooding and other methods. To understand wettability and its alteration, thin-film forces in solid-aqueous-oil systems must be elucidated. Upon rupture of thick aqueous films separating the oil and rock phases, asphaltene components in the crude oil adsorb irreversibly on the solid surface, changing it from water-wet to oil-wet. Conditions of wettability alteration can be found by performing adhesion tests, in which an oil droplet is brought into contact with a solid surface. Exceeding a critical capillary pressure destabilizes the film, causing spontaneous film rupture to a molecularly adsorbed layer and oil adhesion accompanied by pinning at the three-phase contact line. The authors conduct adhesion experiments similar to those of Buckley and Morrow and simultaneously examine the state of the underlying thin film using optical microscopy and microinterferometry. Aqueous thin films between an asphaltic Orcutt crude oil and glass surfaces are studied as a function of aqueous pH and salinity. For the first time, they prove experimentally that strongly water-wet to strongly oil-wet wettability alteration and contact-angle pinning occur when thick aqueous films thin to molecularly adsorbed films and when the oil phase contains asphaltene molecules.

  7. Liquid phase deposition of electrochromic thin films

    SciTech Connect

    Richardson, Thomas J.; Rubin, Michael D.

    2000-08-18

    Thin films of titanium, zirconium and nickel oxides were deposited on conductive SnO2:F glass substrates by immersion in aqueous solutions. The films are transparent, conformal, of uniform thickness and appearance, and adhere strongly to the substrates. On electrochemical cycling, TiO2, mixed TiO2-ZrO2, and NiOx films exhibited stable electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared with films prepared by other non-vacuum techniques. The method is simple, inexpensive, energy efficient, and readily scalable to larger substrates.

  8. Induced electronic anisotropy in bismuth thin films

    SciTech Connect

    Liao, Albert D.; Yao, Mengliang; Opeil, Cyril; Katmis, Ferhat; Moodera, Jagadeesh S.; Li, Mingda; Tang, Shuang; Dresselhaus, Mildred S.

    2014-08-11

    We use magneto-resistance measurements to investigate the effect of texturing in polycrystalline bismuth thin films. Electrical current in bismuth films with texturing such that all grains are oriented with the trigonal axis normal to the film plane is found to flow in an isotropic manner. By contrast, bismuth films with no texture such that not all grains have the same crystallographic orientation exhibit anisotropic current flow, giving rise to preferential current flow pathways in each grain depending on its orientation. Extraction of the mobility and the phase coherence length in both types of films indicates that carrier scattering is not responsible for the observed anisotropic conduction. Evidence from control experiments on antimony thin films suggests that the anisotropy is a result of bismuth's large electron effective mass anisotropy.

  9. Adhesion and friction of thin metal films

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.

    1976-01-01

    Sliding friction experiments were conducted in vacuum with thin films of titanium, chromium, iron, and platinum sputter deposited on quartz or mica substrates. A single crystal hemispherically tipped gold slider was used in contact with the films at loads of 1.0 to 30.0 and at a sliding velocity of 0.7 mm/min at 23 C. Test results indicate that the friction coefficient is dependent on the adhesion of two interfaces, that between the film and its substrate and the slider and the film. There exists a relationship between the percent d bond character of metals in bulk and in thin film form and the friction coefficient. Oxygen can increase adhesive bonding of a metal film (platinum) to a substrate.

  10. Flexible Thin Metal Film Thermal Sensing System

    NASA Technical Reports Server (NTRS)

    Thomsen, Donald Laurence (Inventor)

    2012-01-01

    A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

  11. Microcrystalline organic thin-film solar cells.

    PubMed

    Verreet, Bregt; Heremans, Paul; Stesmans, Andre; Rand, Barry P

    2013-10-11

    Microcrystalline organic films with tunable thickness are produced directly on an indium-tin-oxide substrate, by crystallizing a thin amorphous rubrene film followed by its use as a template for subsequent homoepitaxial growth. These films, with exciton diffusion lengths exceeding 200 nm, produce solar cells with increasing photocurrents at thicknesses up to 400 nm with a fill factor >65%, demonstrating significant potential for microcrystalline organic electronic devices. PMID:23939936

  12. Process for making thin film solar cell

    SciTech Connect

    Eberspacher, C.; Ermer, J.H.; Mitchell, K.W.

    1991-09-03

    This paper describes a semiconducting thin film forced on a substrate by the method. It comprises: depositing a composite film of copper and indium on a substrate, the film having an atomic copper to indium ratio of about one, depositing a film of selenium on the composite copper indium film, the selenium film thickness selected to provide an atomic ratio of selenium to copper and indium of less than one, and heating the substrate with the composite copper indium film and the selenium film in the presence of H{sub 2}S gas for a time and at a temperature sufficient to cause interdiffusion of copper, indium, selenium and sulfur to form a semiconductor of the class CuInSe{sub 2{minus}x}S{sub x} where x is less than two.

  13. Thin-film Rechargeable Lithium Batteries

    DOE R&D Accomplishments Database

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1995-06-01

    Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

  14. Thin-film rechargeable lithium batteries

    SciTech Connect

    Dudney, N.J.; Bates, J.B.; Lubben, D.

    1995-06-01

    Thin-film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin-film battery.

  15. Thin Ice Films at Mineral Surfaces.

    PubMed

    Yeşilbaş, Merve; Boily, Jean-François

    2016-07-21

    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood. PMID:27377606

  16. The preparation of ACEL thin films

    NASA Astrophysics Data System (ADS)

    Vecht, Aron

    1990-05-01

    Although thin film ACEL devices have become commercially available, the number of companies producing these displays has continued to diminish. The cause of their demise was not display performance, as both sufficient brightness and efficiency has been achieved, but the low return on the heavy capital investment due to the poor yields obtained in production. In order to make ACEL thin film devices more viable, the capital investment needs to be low and/or the production yields high. Opting for relatively expensive sputtering or ALE techniques as the sole methods of fabricating EL structures, is both commercially and scientifically ill-advised. Considerable effort was spent in developing cheaper alternative techniques for thin film deposition. The main objectives of the contract can be summarized as follows: (1) to deposit high quality ZnS thin films by MOCVD, (2) to dope the ZnS thin film with Mn, (3) to deposit high quality dielectric films using a novel spray pyrolysis process, (4) to evaluate optimized insulator/ZnS-Mn/insulator structures, and (5) the fabrication of large area XY matrix ACEL structures.

  17. Thin film absorber for a solar collector

    DOEpatents

    Wilhelm, William G.

    1985-01-01

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  18. Carrier lifetimes in thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  19. Adhesive transfer of thin viscoelastic films.

    PubMed

    Shull, Kenneth R; Martin, Elizabeth F; Drzal, Peter L; Hersam, Mark C; Markowitz, Alison R; McSwain, Rachel L

    2005-01-01

    Micellar suspensions of acrylic diblock copolymers are excellent model materials for studying the adhesive transfer of viscoelastic solids. The micellar structure is maintained in films with a variety of thicknesses, giving films with a well-defined structure and viscoelastic character. Thin films were cast onto elastomeric silicone substrates from micellar suspensions in butanol, and the adhesive interactions between these coated elastomeric substrates and a rigid indenter were quantified. By controlling the adhesive properties of the film/indenter and film/substrate interfaces we were able to obtain very clean transfer of the film from the substrate to the portion of the glass indenter with which the film was in contact. Adhesive failure at the film/substrate interface occurs when the film/indenter interface is able to support an applied energy release rate that is sufficient to result in cavity nucleation at the film/substrate interface. Cavity formation is rapidly followed by delamination of the entire region under the indenter. The final stage in the transfer process involves the failure of the film that bridges the indenter and the elastomeric substrate. This film is remarkably robust and is extended to three times its original width prior to failure. Failure of this film occurs at the periphery of the indenter, giving a transferred film that conforms to the original contact area between the indenter and the coated substrate. PMID:15620300

  20. Simulated Thin-Film Growth and Imaging

    NASA Astrophysics Data System (ADS)

    Schillaci, Michael

    2001-06-01

    Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

  1. Coalescence and percolation in thin metal films

    SciTech Connect

    Yu, X.; Duxbury, P.M.; Jeffers, G.; Dubson, M.A. Center for Fundamental Materials Research, Michigan State University, East Lansing, Michigan 48824-1116 )

    1991-12-15

    Metals thermally evaporated onto warm insulating substrates evolve to the thin-film state via the morphological sequence: compact islands, elongated islands, percolation, hole filling, and finally the thin-film state. The coverage at which the metal percolates ({ital p}{sub {ital c}}) is often considerably higher than that predicted by percolation models, such as inverse swiss cheese or lattice percolation. Using a simple continuum model, we show that high-{ital p}{sub {ital c}}'s arise naturally in thin films that exhibit a crossover from full coalescence of islands at early stages of growth to partial coalescence at later stages. In this interrupted-coalescence model, full coalescence of islands occurs up to a critical island radius {ital R}{sub {ital c}}, after which islands overlap, but do not fully coalesce. We present the morphology of films and the critical area coverages generated by this model.

  2. Method for making thin polypropylene film

    DOEpatents

    Behymer, R.D.; Scholten, J.A.

    1985-11-21

    An economical method is provided for making uniform thickness polypropylene film as thin as 100 Angstroms. A solution of polypropylene dissolved in xylene is formed by mixing granular polypropylene and xylene together in a flask at an elevated temperature. A substrate, such as a glass plate or microscope slide is immersed in the solution. When the glass plate is withdrawn from the solution at a uniform rate, a thin polypropylene film forms on a flat surface area of the glass plate as the result of xylene evaporation. The actual thickness of the polypropylene film is functional of the polypropylene in xylene solution concentration, and the particular withdrawal rate of the glass plate from the solution. After formation, the thin polypropylene film is floated from the glass plate onto the surface of water, from which it is picked up with a wire hoop.

  3. Tungsten-doped thin film materials

    DOEpatents

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  4. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    DOEpatents

    Brinker, Charles Jeffrey; Prakash, Sai Sivasankaran

    1999-01-01

    A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  5. Niobium Thin Film Characterization for Thin Film Technology Used in Superconducting Radiofrequency Cavities

    NASA Astrophysics Data System (ADS)

    Dai, Yishu; Valente-Feliciano, Anne-Marie

    2015-10-01

    Superconducting RadioFrequency (SRF) penetrates about 40-100 nm of the top surface, making thin film technology possible in producing superconducting cavities. Thin film is based on the deposition of a thin Nb layer on top of a good thermal conducting material such as Al or Cu. Thin film allows for better control of the surface and has negligible response to the Earth's magnetic field, eliminating the need for magnetic shielding of the cavities. Thin film superconductivity depends heavily on coating process conditions, involving controllable parameters such as crystal plane orientation, coating temperature, and ion energy. MgO and Al2O3 substrates are used because they offer very smooth surfaces, ideal for studying film growth. Atomic Force Microscopy is used to characterize surface's morphology. It is evident that a lower nucleation energy and a long coating time increases the film quality in the r-plane sapphire crystal orientation. The quality of the film increases with thickness. Nb films coated on r-plane, grow along the (001) plane and yield a much higher RRR compared to the films grown on a- and c-planes. This information allows for further improvement on the research process for thin film technology used in superconducting cavities for the particle accelerators. National Science Foundation, Department of Energy, Jefferson Lab, Old Dominion University.

  6. Protective infrared antireflection coating based on sputtered germanium carbide

    NASA Astrophysics Data System (ADS)

    Gibson, Des; Waddell, Ewan; Placido, Frank

    2011-09-01

    This paper describes optical, durablility and environmental performance of a germanium carbide based durable antireflection coating. The coating has been demonstrated on germanium and zinc selenide infra-red material however is applicable to other materials such as zinc sulphide. The material is deposited using a novel reactive closed field magnetron sputtering technique, offering significant advantages over conventional evaporation processes for germanium carbide such as plasma enhanced chemical vapour deposition. The sputtering process is "cold", making it suitable for use on a wide range of substrates. Moreover, the drum format provide more efficient loading for high throughput production. The use of the closed field and unbalanced magnetrons creates a magnetic confinement that extends the electron mean free path leading to high ion current densities. The combination of high current densities with ion energies in the range ~30eV creates optimum thin film growth conditions. As a result the films are dense, spectrally stable, supersmooth and low stress. Films incorporate low hydrogen content resulting in minimal C-H absorption bands within critical infra-red passbands such as 3 to 5um and 8 to 12um. Tuning of germanium carbide (Ge(1-x)Cx) film refractive index from pure germanium (refractive index 4) to pure germanium carbide (refractive index 1.8) will be demonstrated. Use of film grading to achieve single and dual band anti-reflection performance will be shown. Environmental and durability levels are shown to be suitable for use in harsh external environments.

  7. Corrosion Behaviour of Sputtered Alumina Thin Films

    NASA Astrophysics Data System (ADS)

    Reddy, I. Neelakanta; Dey, Arjun; Sridhara, N.; Anoop, S.; Bera, Parthasarathi; Rani, R. Uma; Anandan, Chinnasamy; Sharma, Anand Kumar

    2015-10-01

    Corrosion studies of sputtered alumina thin films grown on stainless steel (SS) 304 were carried out by linear polarization and electrochemical impedance spectroscopy. Noticeable changes were not observed in morphology and surface roughness of films after carrying out the corrosion test. Corrosion current density (icorr) of alumina coated SS decreased up to 10-10 A cm-2 while icorr value in the range of 10-5-10-6 A cm-2 was observed for bare SS. The direct sputtered film showed superior corrosion resistance behaviour than the reactive sputtered film. This might be attributed to the difference in thickness of the films sputtered by direct and reactive methods. The electronic structure of deposited alumina films was studied both before and after corrosion test by X-ray photoelectron spectroscopy technique which also confirmed no structural changes of alumina film after exposing it to corrosive environment.

  8. Mirrorlike pulsed laser deposited tungsten thin film

    SciTech Connect

    Mostako, A. T. T.; Khare, Alika; Rao, C. V. S.

    2011-01-15

    Mirrorlike tungsten thin films on stainless steel substrate deposited via pulsed laser deposition technique in vacuum (10{sup -5} Torr) is reported, which may find direct application as first mirror in fusion devices. The crystal structure of tungsten film is analyzed using x-ray diffraction pattern, surface morphology of the tungsten films is studied with scanning electron microscope and atomic force microscope. The film composition is identified using energy dispersive x-ray. The specular and diffuse reflectivities with respect to stainless steel substrate of the tungsten films are recorded with FTIR spectra. The thickness and the optical quality of pulsed laser deposition deposited films are tested via interferometric technique. The reflectivity is approaching about that of the bulk for the tungsten film of thickness {approx}782 nm.

  9. Mirrorlike pulsed laser deposited tungsten thin film.

    PubMed

    Mostako, A T T; Rao, C V S; Khare, Alika

    2011-01-01

    Mirrorlike tungsten thin films on stainless steel substrate deposited via pulsed laser deposition technique in vacuum (10(-5) Torr) is reported, which may find direct application as first mirror in fusion devices. The crystal structure of tungsten film is analyzed using x-ray diffraction pattern, surface morphology of the tungsten films is studied with scanning electron microscope and atomic force microscope. The film composition is identified using energy dispersive x-ray. The specular and diffuse reflectivities with respect to stainless steel substrate of the tungsten films are recorded with FTIR spectra. The thickness and the optical quality of pulsed laser deposition deposited films are tested via interferometric technique. The reflectivity is approaching about that of the bulk for the tungsten film of thickness ∼782 nm. PMID:21280810

  10. A high performance thin film thermoelectric cooler

    SciTech Connect

    Rowe, D.M.; Min, G.; Volklein, F.

    1998-07-01

    Thin film thermoelectric devices with small dimensions have been fabricated using microelectronics technology and operated successfully in the Seebeck mode as sensors or generators. However, they do not operate successfully in the Peltier mode as coolers, because of the thermal bypass provided by the relatively thick substrate upon which the thermoelectric device is fabricated. In this paper a processing sequence is described which dramatically reduces this thermal bypass and facilitates the fabrication of high performance integrated thin film thermoelectric coolers. In the processing sequence a very thin amorphous SiC (or SiO{sub 2}SiN{sub 4}) film is deposited on a silicon substrate using conventional thin film deposition and a membrane formed by removing the silicon substrate over a desired region using chemical etching or micro-machining. Thermoelements are deposited on the membrane using conventional thin film deposition and patterning techniques and configured so that the region which is to be cooled is abutted to the cold junctions of the Peltier thermoelements while the hot junctions are located at the outer peripheral area which rests on the silicon substrate rim. Heat is pumped laterally from the cooled region to the silicon substrate rim and then dissipated vertically through it to an external heat sink. Theoretical calculations of the performance of a cooler described above indicate that a maximum temperature difference of about 40--50K can be achieved with a maximum heat pumping capacity of around 10 milliwatts.

  11. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    SciTech Connect

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-11-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 {Angstrom}), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 {Angstrom} of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films.

  12. Thin film dielectric composite materials

    DOEpatents

    Jia, Quanxi; Gibbons, Brady J.; Findikoglu, Alp T.; Park, Bae Ho

    2002-01-01

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  13. Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

    SciTech Connect

    Gajula, D. R. Baine, P.; Armstrong, B. M.; McNeill, D. W.; Modreanu, M.; Hurley, P. K.

    2014-01-06

    Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al{sub 2}O{sub 3} interfacial layer (∼2.8 nm). For diodes with an Al{sub 2}O{sub 3} interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO{sub 2} interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm.

  14. Crystallization of zirconia based thin films.

    PubMed

    Stender, D; Frison, R; Conder, K; Rupp, J L M; Scherrer, B; Martynczuk, J M; Gauckler, L J; Schneider, C W; Lippert, T; Wokaun, A

    2015-07-28

    The crystallization kinetics of amorphous 3 and 8 mol% yttria stabilized zirconia (3YSZ and 8YSZ) thin films grown by pulsed laser deposition (PLD), spray pyrolysis and dc-magnetron sputtering are explored. The deposited films were heat treated up to 1000 °C ex situ and in situ in an X-ray diffractometer. A minimum temperature of 275 °C was determined at which as-deposited amorphous PLD grown 3YSZ films fully crystallize within five hours. Above 325 °C these films transform nearly instantaneously with a high degree of micro-strain when crystallized below 500 °C. In these films the t'' phase crystallizes which transforms at T > 600 °C to the t' phase upon relaxation of the micro-strain. Furthermore, the crystallization of 8YSZ thin films grown by PLD, spray pyrolysis and dc-sputtering are characterized by in situ XRD measurements. At a constant heating rate of 2.4 K min(-1) crystallization is accomplished after reaching 800 °C, while PLD grown thin films were completely crystallized already at ca. 300 °C. PMID:26119755

  15. Mesoscale morphologies in polymer thin films.

    SciTech Connect

    Ramanathan, M.; Darling, S. B.

    2011-06-01

    In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

  16. Capillary stress in microporous thin films

    SciTech Connect

    Samuel, J.; Hurd, A.J.; Frink, L.J.D.; Swol, F. van; Brinker, C.J. |; Raman, N.K.

    1996-06-01

    Development of capillary stress in porous xerogels, although ubiquitous, has not been systematically studied. The authors have used the beam bending technique to measure stress isotherms of microporous thin films prepared by a sol-gel route. The thin films were prepared on deformable silicon substrates which were then placed in a vacuum system. The automated measurement was carried out by monitoring the deflection of a laser reflected off the substrate while changing the overlying relative pressure of various solvents. The magnitude of the macroscopic bending stress was found to reach a value of 180 MPa at a relative pressure of methanol, P/Po = 0.001. The observed stress is determined by the pore size distribution and is an order of magnitude smaller in mesoporous thin films. Density Functional Theory (DFT) indicates that for the microporous materials, the stress at saturation is compressive and drops as the relative pressure is reduced.

  17. Vibration welding system with thin film sensor

    DOEpatents

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  18. Thin film ferroelectric electro-optic memory

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita (Inventor); Thakoor, Anilkumar P. (Inventor)

    1993-01-01

    An electrically programmable, optically readable data or memory cell is configured from a thin film of ferroelectric material, such as PZT, sandwiched between a transparent top electrode and a bottom electrode. The output photoresponse, which may be a photocurrent or photo-emf, is a function of the product of the remanent polarization from a previously applied polarization voltage and the incident light intensity. The cell is useful for analog and digital data storage as well as opto-electric computing. The optical read operation is non-destructive of the remanent polarization. The cell provides a method for computing the product of stored data and incident optical data by applying an electrical signal to store data by polarizing the thin film ferroelectric material, and then applying an intensity modulated optical signal incident onto the thin film material to generate a photoresponse therein related to the product of the electrical and optical signals.

  19. Thin Film Transistors On Plastic Substrates

    DOEpatents

    Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

    2004-01-20

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  20. Method for synthesizing thin film electrodes

    DOEpatents

    Boyle, Timothy J.

    2007-03-13

    A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

  1. Immersion Deposition of Metal Films on Silicon and Germanium Substrates in Supercritical Carbon Dioxide

    SciTech Connect

    Ye, Xiang-Rong; Wai, Chien M.; Zhang, Daqing; Kranov, Yanko; Mcilroy, David; Lin, Yuehe; Engelhard, Mark H.

    2003-01-29

    A low temperature carbon dioxide based on immersion deposition technology (SFID) has been developed for producing palladium, copper, silver, and other metal films on silicon-based substrates in supercritical CO2. The reaction is initiated by oxidation of elemental silicon to SiF4 or H2SiF6 by HF with the release of electrons that cause the reduction of metal ions in an organometallic precursor to the metallic form on silicon surface in CO2. Only the substrate surfaces are coated with metals using this method. Based on surface analysis of the films and spectroscopic analysis of the reaction products, the mechanism of metal film deposition is discussed. The metal films (Pd, Cu, and Ag) formed on silicon surfaces by the SFID method exhibit good coverage, smooth and dense texture, high purity and a metallic behavior. Similarly, metal films can also be deposited onto geranium substrates using SFID. The gas-like properties and the high pressure of the supercritical fluids, combined with the low reaction temperature, make this SFID method potentially useful for depositing thin metal films in small features, which are difficult to accomplish by conventional CVD methods.

  2. Thin film oxygen partial pressure sensor

    NASA Technical Reports Server (NTRS)

    Wortman, J. J.; Harrison, J. W.; Honbarrier, H. L.; Yen, J.

    1972-01-01

    The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.

  3. Solid-state thin-film supercapacitor with ruthenium oxide and solid electrolyte thin films

    NASA Astrophysics Data System (ADS)

    Yoon, Y. S.; Cho, W. I.; Lim, J. H.; Choi, D. J.

    Direct current reactive sputtering deposition of ruthenium oxide thin films (bottom and top electrodes) at 400°C are performed to produce a solid-state thin-film supercapacitor (TFSC). The supercapacitor has a cell structure of RuO 2/Li 2.94PO 2.37N 0.75 (Lipon)/RuO 2/Pt. Radio frequency, reactive sputtering deposition of an Li 2.94PO 2.37N 0.75 electrolyte film is performed on the bottom RuO 2 film at room temperature to separate the bottom and top RuO 2 electrodes electrically. The stoichiometry of the RuO 2 thin film is investigated by Rutherford back-scattering spectrometry (RBS). X-ray diffraction (XRD) shows that the as-deposited RuO 2 thin film is an amorphous phase. Scanning electron microscopy (SEM) measurements reveal that the RuO 2/Lipon/RuO 2 hetero-interfaces have no inter-diffusion problems. Charge-discharge measurements with constant current at room temperature clearly reveal typical supercapacitor behaviour for a RuO 2/Lipon/RuO 2/Pt cell structure. Since the electrolyte thin film has low ionic mobility, the capacity and cycle performance are inferior to those of a bulk type of supercapacitor. These results indicate that a high performance, TFSC can be fabricated by a solid electrolyte thin film with high ionic conductivity.

  4. Borocarbide thin films and tunneling measurements.

    SciTech Connect

    Iavarone, M.; Andreone, A.; Cassinese, A.; Dicapual, R.; giannil, L.; Vagliol, R.; DeWilde, Y.; Crabtree, G. W.

    2000-06-15

    The results obtained by their group in thin film fabrication and STM tunneling on superconducting borocarbides YNi{sub 2}B{sub 2}C have been be briefly reviewed. Results concerning the microwave surface impedance and the S/N planar junctions on LuNi{sub 2}B{sub 2}C thin films have been also presented and analyzed. These new data unambiguously confirm the full BCS nature of the superconducting gap in borocarbides and the absence of significant pair-breaking effects in LuNi{sub 2}B{sub 2}C.

  5. Feasibility Study of Thin Film Thermocouple Piles

    NASA Technical Reports Server (NTRS)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  6. Emittance Theory for Thin Film Selective Emitter

    NASA Technical Reports Server (NTRS)

    Chubb, Donald L.; Lowe, Roland A.; Good, Brian S.

    1994-01-01

    Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

  7. Structural and photoelectronic properties of a-SiGe:H thin films with varied Ge prepared by PECVD

    NASA Astrophysics Data System (ADS)

    Xu, Rui; Li, Wei; He, Jian; Qi, Kang-Cheng; Jiang, Ya-Dong

    2011-12-01

    Hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy thin films were fabricated by conventional radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) with a gas mixture of silane (SiH4) and germane (GeH4). The structural, optical and electrical properties of the films with different gas volume fraction of germane were investigated by Raman and Fourier transform infrared (FTIR) spectroscopy, ultraviolet and visible (UV-vis) spectroscopy and I-V curves, respectively. The amorphous network and structural disorder in the a-SiGe:H thin films were evaluated by Raman spectroscopy. Meanwhile, the Si-H and Ge-H configurations of the films were investigated by FTIR spectroscopy. From UV-vis spectroscopy and I-V curves, the optical and electrical properties of the testing films could be deduced with varied germanium. It can be concluded that the structural and photoelectronic properties of a-SiGe:H thin films can be influenced apparently by varing of GeH4/(SiH4+ GeH4) ratio in PECVD process.

  8. Annealed CVD molybdenum thin film surface

    DOEpatents

    Carver, Gary E.; Seraphin, Bernhard O.

    1984-01-01

    Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

  9. Dynamics of liquid films and thin jets

    NASA Technical Reports Server (NTRS)

    Zak, M.

    1979-01-01

    The theory of liquid films and thin jets as one- and two-dimensional continuums is examined. The equations of motion have led to solutions for the characteristic speeds of wave propagation for the parameters characterizing the shape. The formal analogy with a compressible fluid indicates the possibility of shock wave generation in films and jets and the formal analogy to the theory of threads and membranes leads to the discovery of some new dynamic effects. The theory is illustrated by examples.

  10. Superconducting thin films on potassium tantalate substrates

    DOEpatents

    Feenstra, Roeland; Boatner, Lynn A.

    1992-01-01

    A superconductive system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.