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Sample records for heavy ga-doped zno

  1. Microstructure evolution of highly Ga-doped ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Oh, S. J.; Jung, M. N.; Ha, S. Y.; Choi, S. G.; Kim, J. J.; Kobayashi, K.; Lee, S. T.; Lee, H. C.; Cho, Y. R.; Yao, T.; Chang, J. H.

    2008-10-01

    Ga-doped zinc oxide (ZnO) (ZnO:Ga) nanocrystals were synthesized by the vapor-solidification method to investigate morphological and structural evolution induced by Ga-incorporation. Ga-content was controlled in the full composition range (0-100%). As the Ga-content increased, the shape of nanocrystals changed from tetrapod- to rod-type. Hard X-ray photoemission spectroscopy (HXPES) measurement indicates that highly Ga-doped uniphase ZnO:Ga nanocrystals without a serious deterioration of morphology are achieved, which strongly suggests the feasibility of Ga as a successful n-type dopant for ZnO-based nanocrystals.

  2. Analysis of defect luminescence in Ga-doped ZnO nanoparticles.

    PubMed

    Zhu, Wenliang; Kitamura, Shoichiro; Boffelli, Marco; Marin, Elia; Gaspera, Enrico Della; Sturaro, Marco; Martucci, Alessandro; Pezzotti, Giuseppe

    2016-04-14

    We applied cathodoluminescence (CL) spectroscopy to evaluate the defect-induced luminescence within ZnO and Ga-doped ZnO (GZO) nanoparticles. The observed emissions from defect sites present in the GZO lattice exhibited a strong dependence on both dopant content and synthesis methods. The strong and broad defect-induced emissions and inhomogeneous population of intrinsic defects in nano-sized ZnO particles could effectively be suppressed by Ga doping, although large dopant amounts caused the generation of negatively-charged defects, VZn and Oi, with a subsequent increase of the luminescence. Upon deconvolution of the retrieved CL spectra into individual sub-bands, the physical origin of all the sub-bands could be clarified, and related to sample composition and synthesis protocol. This study lays the foundation of quantitative CL evaluation of defects to assess the quality of GZO optoelectronic devices. PMID:26996752

  3. Effect of Ga-doping on the properties of ZnO nanowire

    SciTech Connect

    Ishiyama, Takeshi Nakane, Takaya Fujii, Tsutomu

    2015-02-27

    Arrays of single-crystal zinc oxide (ZnO) nanowires have been synthesized on silicon substrates by vapor-liquid-solid growth techniques. The effect of growth conditions including substrate temperature and Ar gas flow rate on growth properties of ZnO nanowire arrays were studied. Structural and optical characterization was performed using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. SEM images of the ZnO nanowire arrays grown at various Ar gas flow rates indicated that the alignment and structural features of ZnO nanowires were affected by the gas flow rate. The PL of the ZnO nanowire arrays exhibited strong ultraviolet (UV) emission at 380 nm and green emission around 510 nm. Moreover, the green emission reduced in Ga-doped sample.

  4. Ga-doped ZnO conducting antireflection coatings for crystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Estrich, N. A.; Hook, D. H.; Smith, A. N.; Leonard, J. T.; Laughlin, B.; Maria, J.-P.

    2013-06-01

    Transparent, conductive gallium-doped ZnO thin films are evaluated for application as conducting antireflection coatings (ARC) for crystalline silicon solar cells as a means to enhance efficiency by reducing the overall resistivity of the photovoltaic circuit. All Ga-doped ZnO thin films in this study were deposited using pulsed laser deposition. Synthesis conditions were first optimized for maximum electrical resistivity and minimal visible light absorption. The ideal combination contained 1 mol. % Ga doping and exhibited ˜90% transmission, with resistivity in the 1 × 10-3 ohm-cm range. Optimized films were prepared on reference flat silicon wafers with known dopant densities and on commercially obtained solar cell emitters without ARCs. Circular transmission line method measurements were used to measure specific contact resistivity (ρc). For n-type doped solar cell emitters, contact resistivity values of 0.1 mΩ cm2 were observed repeatedly. These values are consistent with, or lower than, contact resistivities associated with conventional silver paste metallization.

  5. Fabrication and characterization of pristine and annealed Ga doped ZnO thin films using sputtering

    NASA Astrophysics Data System (ADS)

    Mishra, Abhisek; Mohapatra, Saswat; Gouda, Himanshu Sekhar; Singh, Udai P.

    2016-05-01

    ZnO is a wide-band gap, transparent, polar semiconductor with unparalleled optoelectronic, piezoelectric, thermal and transport properties, which make it the material of choice for a wide range of applications such as blue/UV optoelectronics, energy conversion, transparent electronics, spintronic, plasmonic and sensor devices. We report, three sets of Ga doped Zinc Oxide (GZO) were fabricated in different sputtering power (100 watt, 200 watt and 300 watt). Thereafter films were annealed in nitrogen ambient for 30 minutes at 400° C. From the optical absorption spectroscopy it was found that pristine films are showing a 75% transmittance in the visible region of light and it increases after the annealing. However, for 300 W grown sample opposite trend has been achieved for the post annealed sample. X-ray diffraction pattern of all the pristine and annealed films showed a preferable growth orientation at (002) phase. Some other weak peaks were also appeared in different angle which indicates that films are polycrystalline in nature. XRD data also reveals that crystallite size increases with sputtering power up to 200 W and thereafter it decreases with the deposition power. It also noted that the crystallite size of the annealed film increases with compare to the non annealed films. At room temperature an enhancement in electrical properties of Ga doped ZnO thin films was noted for the annealed ZnO films except for the film deposited at 300 watt. More significantly, it was found that annealed thin films showed the resistivity in the range of 10-3 ˜ 10-4 ohm-cm. Such a high optical transmittance and conducting zinc-oxide thin film can be used as a window layer in solar cell.

  6. Dye-sensitized solar cells using ZnO nanotips and Ga-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Chen, Hanhong; Du Pasquier, Aurelien; Saraf, Gaurav; Zhong, Jian; Lu, Yicheng

    2008-04-01

    Ga-doped ZnO (GZO) transparent conducting films and well-aligned ZnO nanotips were sequentially grown on a glass substrate using metal-organic chemical vapor deposition (MOCVD). The morphology control of ZnO from dense films to nanotips was realized through temperature-modulated growth. The ZnO nanotips/GZO structure was sensitized with dye N719 to form photoelectrochemical cells. It is found that the power conversion efficiency linearly increases with the length of ZnO nanotips. For the 1.0 cm2 dye-sensitized solar cell built from 4.8 µm ZnO nanotips, a peak incident photo-to-current conversion efficiency of 79% (at ~530 nm) and a power conversion efficiency of 0.77% under the illumination of one sun-simulated sunlight were achieved. UV light harvesting directly by ZnO was observed. The I-V characteristics of the cells were analyzed using a one-diode equivalent circuit model.

  7. Mid-infrared extraordinary transmission through Ga-doped ZnO films with 2D hole arrays

    NASA Astrophysics Data System (ADS)

    Cleary, Justin W.; Nader Esfahani, Nima; Vangala, Shiva; Guo, Junpeng; Hendrickson, Joshua R.; Leedy, Kevin D.; Look, David C.

    2014-03-01

    Extraordinary optical transmission (EOT), through highly conductive ZnO films with sub-wavelength hole arrays is investigated in the long-wavelength infrared regime. EOT is facilitated by the excitation of surface plasmon polaritons (SPPs) on Ga-Doped ZnO films and can be tuned utilizing the physical parameters such as film thickness, period, hole size, and hole shape, as well as doping of the film. Analytical and finite-difference time-domain calculations are completed for 1 micron thick films with square, circular, and triangular hole arrays demonstrating SPP coupling and EOT. The fundamental plasmonic modes are observed in each of these hole shapes at wavelengths that correspond to strong EOT peaks. Doping tunability for these structures is also observed. Ga-doped ZnO films are grown via pulsed laser deposition (PLD) on silicon with plasma frequencies in the near-infrared. The sub-wavelength 2D hole arrays are fabricated in the Ga-doped ZnO films via standard lithography and etching processes. This highly conductive ZnO EOT structure may prove useful in novel integrated components such as tunable biosensors or surface plasmon coupling mechanisms.

  8. Hot-electron energy relaxation time in Ga-doped ZnO films

    SciTech Connect

    Šermukšnis, E. Liberis, J.; Ramonas, M.; Matulionis, A.; Toporkov, M.; Liu, H. Y.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

    2015-02-14

    Hot-electron energy relaxation time is deduced for Ga-doped ZnO epitaxial layers from pulsed hot-electron noise measurements at room temperature. The relaxation time increases from ∼0.17 ps to ∼1.8 ps when the electron density increases from 1.4 × 10{sup 17 }cm{sup −3} to 1.3 × 10{sup 20 }cm{sup −3}. A local minimum is resolved near an electron density of 1.4 × 10{sup 19 }cm{sup −3}. The longest energy relaxation time (1.8 ps), observed at the highest electron density, is in good agreement with the published values obtained by optical time-resolved luminescence and absorption experiments. Monte Carlo simulations provide a qualitative interpretation of our observations if hot-phonon accumulation is taken into account. The local minimum of the electron energy relaxation time is explained by the ultrafast plasmon-assisted decay of hot phonons in the vicinity of the plasmon–LO-phonon resonance.

  9. Structure and Properties of Al and Ga- Doped ZnO

    NASA Astrophysics Data System (ADS)

    Temizer, Namik Kemal

    Recently there is tremendous interest in Transparent conducting oxide (TCO) research due to the unlimited and exciting application areas. Current research is mostly focused on finding alternative low cost and sustainable materials in order to replace indium tin oxide (ITO), which caused serious concern due to the increasing cost of indium and chemical stability issues of ITO. The primary aim of this research is to develop alternative TCO materials with superior properties in order to increase the efficiency in optoelectronic applications, as well as to study the properties of these materials to fully characterize them. We have grown Al and Ga-doped ZnO films with an optimized composition under different deposition conditions in order to understand the effect of processing parameters on the film properties. We report a detailed investigation on the structure-property correlations in Ga and Al codoped ZnO films on c-sapphire substrates where the thin film microstructure varies from nanocrystalline to single crystal. We have achieved highly epitaxial films with very high optical transmittance (close to 90%) and low resistivity (˜110muO-cm) values. The films grown in an ambient oxygen partial pressure (PO2 ) of 50 mTorr and at growth temperatures from room temperature to 600°C showed semiconducting behavior, whereas samples grown at a Po2 of 1 mTorr showed metallic nature. The most striking feature is the occurrence of resistivity minima at relatively high temperatures around 110 K in films deposited at high temperatures. The structure-property correlations reveal that point defects play an important role in modifying the structural, optical, electrical and magnetic properties and such changes in physical properties are controlled predominantly by the defect content. To gain a better understanding of the conduction processes in doped ZnO thin films, we have studied the temperature variation of resistivity of some selected samples that showed some interesting behavior

  10. Synthesis of nano-dimensional ZnO and Ga doped ZnO thin films by vapor phase transport and study as transparent conducting oxide.

    PubMed

    Ghosh, S; Saurav, M; Pandey, B; Srivastava, P

    2008-05-01

    We report synthesis of polycrystalline ZnO and Ga doped ZnO (ZnO:Ga) thin films (approximately 80 nm) on Si and quartz substrates in a non-vacuum muffle furnace, a simple and cost-effective route, without any catalyst/reactive carrier gases, at relatively low processing temperature of 550 degrees C. The crystalline phases of the films are identified by grazing angle X-ray diffraction (GAXRD). The growth of ZnO films is examined with scanning electron microscope (SEM) as a function of deposition time. An optical transmission of approximately 90% is observed for pure ZnO film having a resistivity of approximately 2.1 Omega-cm as measured by van der Pauw technique. Doping with Ga results in single phase ZnO:Ga films, retaining an optical transmission of about 80% and three orders of magnitude decrease in resistivity as compared to pure ZnO film. PMID:18572702

  11. ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

    PubMed

    Hu, Qichang; Li, Yafeng; Huang, Feng; Zhang, Zhaojun; Ding, Kai; Wei, Mingdeng; Lin, Zhang

    2015-01-01

    High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate. PMID:26099568

  12. ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells

    PubMed Central

    Hu, Qichang; Li, Yafeng; Huang, Feng; Zhang, Zhaojun; Ding, Kai; Wei, Mingdeng; Lin, Zhang

    2015-01-01

    High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate. PMID:26099568

  13. Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy

    SciTech Connect

    Gabás, M.; Ramos Barrado, José R.; Torelli, P.; Barrett, N. T.

    2014-01-01

    Al- and Ga-doped sputtered ZnO films (AZO, GZO) are semiconducting and metallic, respectively, despite the same electronic valence structure of the dopants. Using hard X-ray photoelectron spectroscopy we observe that both dopants induce a band in the electronic structure near the Fermi level, accompanied by a narrowing of the Zn 3d/O 2p gap in the valence band and, in the case of GZO, a substantial shift in the Zn 3d. Ga occupies substitutional sites, whereas Al dopants are in both substitutional and interstitial sites. The latter could induce O and Zn defects, which act as acceptors explaining the semiconducting character of AZO and the lack of variation in the optical gap. By contrast, mainly substitutional doping is consistent with the metallic-like behavior of GZO.

  14. Pretreatment of polyethylene terephthalate substrate for the growth of Ga-doped ZnO thin film.

    PubMed

    Kim, D W; Kang, J H; Lim, Y S; Lee, M H; Seo, W S; Park, H H; Seo, K H; Park, M G

    2011-02-01

    The effect of the pretreatment of polyethylene terephthalate (PET) substrate on the growth of transparent conducting Ga-doped ZnO (GZO) thin film was investigated. Because of its high gas and moisture absorption and easy gas permeation, PET substrate was annealed at 100 degrees C in a vacuum chamber prior to the sputtering growth of GZO thin film for the outgassing of impurity gases. GZO thin film was deposited on the pretreated PET substrate by rf-magnetron sputtering and significantly improved electrical properties of GZO thin film was achieved. Electrical and structural characterizations of the GZO thin films were carried out by 4-point probe, Hall measurement, and scanning electron microscopy, and the effects of the pretreatment on the improved properties of GZO thin films were discussed. This result is not only useful to PET substrate, but also could be applicable to other plastic substrates which inevitably containing the moisture and impurity gases. PMID:21456250

  15. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Structural and Electrical Properties of Single Crystalline Ga-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Lu, Zhong-Lin; Zou, Wen-Qin; Xu, Ming-Xiang; Zhang, Feng-Ming; Du, You-Wei

    2009-11-01

    High-quality Ga-doped ZnO (ZnO:Ga) single crystalline films with various Ga concentrations are grown on a-plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2 at.% and the lowest resistivity can reach 1.92 × 10-4 Ω·cm at room temperature, close to the best value reported. In contrast to ZnO:Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO:Ga thin film is discussed.

  16. Long-wavelength infrared surface plasmons on Ga-doped ZnO films excited via 2D hole arrays for extraordinary optical transmission

    NASA Astrophysics Data System (ADS)

    Cleary, Justin W.; Esfahani, Nima Nader; Vangala, Shivashankar; Guo, Junpeng; Hendrickson, Joshua R.; Leedy, Kevin D.; Thomson, Darren; Look, David C.

    2013-09-01

    Extraordinary optical transmission (EOT) through highly conductive ZnO films with sub-wavelength hole arrays is investigated in the long-wavelength infrared regime. EOT is facilitated by the excitation of surface plasmon polaritons (SPPs) and can be tuned utilizing the physical structure size such as period. Pulse laser deposited Ga-doped ZnO has been shown to have fluctuations in optical and electrical parameters based on fabrication techniques, providing a complimentary tuning means. The sub-wavelength 2D hole arrays are fabricated in the Ga-doped ZnO films via standard lithography and etching processes. Optical reflection measurements completed with a microscope coupled FTIR system contain absorption resonances that are in agreement with analytical theories for excitation of SPPs on 2D structures. EOT through Ga-doped ZnO is numerically demonstrated at wavelengths where SPPs are excited. This highly conductive ZnO EOT structure may prove useful in novel integrated components such as tunable biosensors or surface plasmon coupling mechanisms.

  17. Mechanical and transparent conductive properties of ZnO and Ga-doped ZnO films sputtered using electron-cyclotron-resonance plasma on polyethylene naphtalate substrates

    SciTech Connect

    Akazawa, Housei

    2014-03-15

    Transparent conductive ZnO and Ga-doped ZnO (GZO) films were deposited on polyethylene naphtalate (PEN) sheet substrates using electron cyclotron resonance plasma sputtering. Both ZnO and GZO films were highly adhesive to the PEN substrates without inserting an intermediate layer in the interface. When compared at the same thickness, the transparent conductive properties of GZO films on PEN substrates were only slightly inferior to those on glass substrates. However, the carrier concentration of ZnO films on PEN substrates was 1.5 times that of those on glass substrates, whereas their Hall mobility was only 60% at a thickness of 300 nm. The depth profile of elements measured by secondary ion mass spectroscopy revealed the diffusion of hydrocarbons out of the PEN substrate into the ZnO film. Hence, doped carbons may act as donors to enhance carrier concentration, and the intermixing of elements at the interface may deteriorate the crystallinity, resulting in the lower Hall mobility. When the ZnO films were thicker than 400 nm, cracks became prevalent because of the lattice mismatch strain between the film and the substrate, whereas GZO films were free of cracks. The authors investigated how rolling the films around a cylindrical pipe surface affected their conductive properties. Degraded conductivity occurred at a threshold pipe radius of 10 mm when tensile stress was applied to the film, but it occurred at a pipe radius of 5 mm when compressive stress was applied. These values are guidelines for bending actual devices fabricated on PEN substrates.

  18. Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices

    NASA Astrophysics Data System (ADS)

    Yao, I.-Chuan; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Pang

    2012-04-01

    This study investigates the resistive switching behavior of Ga-doped ZnO (GZO) nanorod thin films with various Ga/Zn molar ratios. Vertically well-aligned and uniform GZO nanorod thin films were successfully grown on Au/Ti/SiO2/p-Si substrates using an aqueous solution method. X-ray diffraction (XRD) results indicate that GZO nanorods have [0001] highly preferred orientation. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations show the formation of highly ordered and dense nanorod thin films. These compact GZO nanorod thin films can be used to make resistive switching memory devices. Such memory devices can be reversibly switched between ON and OFF states, with a stable resistance ratio of ten times, narrow dispersion of ON and OFF voltages, and good endurance performance of over 100 cycles. The resistive switching mechanism in these devices is related to the formation and rupture of conducting filaments consisting of oxygen vacancies, occurring at interfaces between GZO nanorods (grain boundaries). Results show that the resulting compact GZO nanorod thin films have a high potential for resistive memory applications.

  19. Comparative studies of Al-doped ZnO and Ga-doped ZnO transparent conducting oxide thin films

    PubMed Central

    2012-01-01

    We have investigated the influences of aluminum and gallium dopants (0 to 2.0 mol%) on zinc oxide (ZnO) thin films regarding crystallization and electrical and optical properties for application in transparent conducting oxide devices. Al- and Ga-doped ZnO thin films were deposited on glass substrates (corning 1737) by sol–gel spin-coating process. As a starting material, AlCl3⋅6H2O, Ga(NO3)2, and Zn(CH3COO)2⋅2H2O were used. A lowest sheet resistance of 3.3 × 103 Ω/□ was obtained for the GZO thin film doped with 1.5 mol% of Ga after post-annealing at 650°C for 60 min in air. All the films showed more than 85% transparency in the visible region. We have studied the structural and microstructural properties as a function of Al and Ga concentrations through X-ray diffraction and scanning electron microscopy analysis. In addition, the optical bandgap and photoluminescence were estimated. PMID:23173885

  20. Removal of Micrometer Size Morphological Defects and Enhancement of Ultraviolet Emission by Thermal Treatment of Ga-Doped ZnO Nanostructures

    PubMed Central

    Manzoor, Umair; Kim, Do K.; Islam, Mohammad; Bhatti, Arshad S.

    2014-01-01

    Mixed morphologies of Ga-doped Zinc Oxide (ZnO) nanostructures are synthesized by vapor transport method. Systematic scanning electron microscope (SEM) studies of different morphologies, after periodic heat treatments, gives direct evidence of sublimation. SEM micrographs give direct evidence that morphological defects of nanostructures can be removed by annealing. Ultra Violet (UV) and visible emission depends strongly on the annealing temperatures and luminescent efficiency of UV emission is enhanced significantly with each subsequent heat treatment. X-Ray diffraction (XRD) results suggest that crystal quality improved by annealing and phase separation may occur at high temperatures. PMID:24489725

  1. Ga-doped ZnO transparent electrodes with TiO2 blocking layer/nanoparticles for dye-sensitized solar cells

    PubMed Central

    2012-01-01

    Ga-doped ZnO [GZO] thin films were employed for the transparent electrodes in dye-sensitized solar cells [DSSCs]. The electrical property of the deposited GZO films was as good as that of commercially used fluorine-doped tin oxide [FTO]. In order to protect the GZO and enhance the photovoltaic properties, a TiO2 blocking layer was deposited on the GZO surface. Then, TiO2 nanoparticles were coated on the blocking layer, and dye was attached for the fabrication of DSSCs. The fabricated DSSCs with the GZO/TiO2 glasses showed an enhanced conversion efficiency of 4.02% compared to the devices with the normal GZO glasses (3.36%). Furthermore, they showed better characteristics even than those using the FTO glasses, which can be attributed to the reduced charge recombination and series resistance. PMID:22222148

  2. Band alignment and photon extraction studies of Na-doped MgZnO/Ga-doped ZnO heterojunction for light-emitter applications

    NASA Astrophysics Data System (ADS)

    Pandey, Sushil Kumar; Awasthi, Vishnu; Sengar, Brajendra Singh; Garg, Vivek; Sharma, Pankaj; Kumar, Shailendra; Mukherjee, C.; Mukherjee, Shaibal

    2015-10-01

    Ultraviolet photoelectron spectroscopy is carried out to measure the energy discontinuity at the interface of p-type Na-doped MgZnO (NMZO)/n-type Ga-doped ZnO (GZO) heterojunction grown by dual ion beam sputtering. The offset values at valence band and conduction band of NMZO/GZO heterojunction are calculated to be 1.93 and -2.36 eV, respectively. The p-type conduction in NMZO film has been confirmed by Hall measurement and band structure. Moreover, the effect of Ar+ ion sputtering on the valence band onset values of NMZO and GZO thin films has been investigated. This asymmetric waveguide structure formed by the lower refractive index of GZO than that of NMZO indicates that easy extraction of photons generated in GZO through the NMZO layer into free space. The asymmetric waveguide structure has potential applications to produce ZnO-based light emitters with high extraction efficiency.

  3. Stress-induced anomalous shift of optical band gap in Ga-doped ZnO thin films: Experimental and first-principles study

    SciTech Connect

    Wang, Yaqin; Tang, Wu E-mail: lan.zhang@mail.xjtu.edu.cn; Liu, Jie; Zhang, Lan E-mail: lan.zhang@mail.xjtu.edu.cn

    2015-04-20

    In this work, highly c-axis oriented Ga-doped ZnO thin films have been deposited on glass substrates by RF magnetron sputtering under different sputtering times. The optical band gap is observed to shift linearly with the electron concentration and in-plane stress. The failure of fitting the shift of band gap as a function of electron concentration using the available theoretical models suggests the in-plane stress, instead of the electron concentration, be regarded as the dominant cause to this anomalous redshift of the optical band gap. And the mechanism of stress-dependent optical band gap is supported by the first-principles calculation based on density functional theory.

  4. Hydrogen induced electric conduction in undoped ZnO and Ga-doped ZnO thin films: Creating native donors via reduction, hydrogen donors, and reactivating extrinsic donors

    SciTech Connect

    Akazawa, Housei

    2014-09-01

    The manner in which hydrogen atoms contribute to the electric conduction of undoped ZnO and Ga-doped ZnO (GZO) films was investigated. Hydrogen atoms were permeated into these films through annealing in an atmospheric H{sub 2} ambient. Because the creation of hydrogen donors competes with the thermal annihilation of native donors at elevated temperatures, improvements to electric conduction from the initial state can be observed when insulating ZnO films are used as samples. While the resistivity of conductive ZnO films increases when annealing them in a vacuum, the degree of increase is mitigated when they are annealed in H{sub 2}. Hydrogenation of ZnO crystals was evidenced by the appearance of OH absorption signals around a wavelength of 2700 nm in the optical transmittance spectra. The lowest resistivity that was achieved by H{sub 2} annealing was limited to 1–2 × 10{sup −2} Ω cm, which is one order of magnitude higher than that by native donors (2–3 × 10{sup −3} Ω cm). Hence, all native donors are converted to hydrogen donors. In contrast, GZO films that have resistivities yet to be improved become more conductive after annealing in H{sub 2} ambient, which is in the opposite direction of GZO films that become more resistive after vacuum annealing. Hydrogen atoms incorporated into GZO crystals should assist in reactivating Ga{sup 3+} donors.

  5. Growth Behavior of Ga-Doped ZnO Thin Films Deposited on Au/SiN/Si(001) Substrates by Radio Frequency Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Seo, Seon Hee; Kang, Hyon Chol

    2013-11-01

    This paper reports the growth behavior of Ga-doped ZnO (ZnO:Ga) thin films deposited on Au/SiN/Si(001) substrates by radio-frequency magnetron sputtering. The microstructures of the overgrown ZnO:Ga thin films were investigated by performing X-ray diffraction, scanning electron microcopy, and transmission electron microscopy analyses. It was confirmed that the growth process proceeds through three stages. In the first stage, nano-scale ZnO:Ga islands were grown on the SiN layer, while a fairly continuous flat structure was formed on the Au nanoparticles (NPs). In the second stage of the growth process, ZnO:Ga domains with different growth orientations, depending strongly on the crystalline planes of the host Au NPs, were nucleated. These domains then grew at different rates, resulting in a change in the morphology from the initial shape reflecting that of the Au NPs to a sunflower-type shape. In the final stage, columnar growth with a preferred (0002) orientation along the surface normal direction became dominant.

  6. Change of scattering mechanism and annealing out of defects on Ga-doped ZnO films deposited by radio-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Nulhakim, Lukman; Makino, Hisao

    2016-06-01

    This study examines the change of carrier scattering mechanism and defects states in Ga-doped ZnO (GZO) thin films deposited by radio-frequency magnetron sputtering as a function of the substrate temperature (Ts) during deposition. The GZO films deposited at room temperature exhibited a high defect density that resulted in a lower carrier concentration, lower Hall mobility, and optical absorption in visible wavelength range. Such defects were created by ion bombardment and were eliminated by increasing the Ts. The defects related to the optical absorption disappeared at a Ts of 125 °C. The defects responsible for the suppression of the carrier concentration gradually decreased with increasing Ts up to 200 °C. As a result, the carrier concentration and in-grain carrier mobility gradually increased. The Hall mobility was also influenced by film structural properties depending on the Ts. In addition to the c-axis preferred orientation, other oriented grains such as the (10 1 ¯ 1 ) plane parallel to the substrate surface appeared below 150 °C. This orientation of the (10 1 ¯ 1 ) plane significantly reduced the Hall mobility via grain boundary scattering. The films deposited at a Ts higher than 175 °C exhibited perfect c-axis orientation and grain boundary scattering was thus negligible in these films. The appearance of the 10 1 ¯ 1 peak in x-ray diffraction profile was correlated with the contribution of grain boundary scattering in heavily doped GZO films.

  7. Band alignment and photon extraction studies of Na-doped MgZnO/Ga-doped ZnO heterojunction for light-emitter applications

    SciTech Connect

    Pandey, Sushil Kumar; Awasthi, Vishnu; Sengar, Brajendra Singh; Garg, Vivek; Sharma, Pankaj; Mukherjee, Shaibal; Kumar, Shailendra; Mukherjee, C.

    2015-10-28

    Ultraviolet photoelectron spectroscopy is carried out to measure the energy discontinuity at the interface of p-type Na-doped MgZnO (NMZO)/n-type Ga-doped ZnO (GZO) heterojunction grown by dual ion beam sputtering. The offset values at valence band and conduction band of NMZO/GZO heterojunction are calculated to be 1.93 and −2.36 eV, respectively. The p-type conduction in NMZO film has been confirmed by Hall measurement and band structure. Moreover, the effect of Ar{sup +} ion sputtering on the valence band onset values of NMZO and GZO thin films has been investigated. This asymmetric waveguide structure formed by the lower refractive index of GZO than that of NMZO indicates that easy extraction of photons generated in GZO through the NMZO layer into free space. The asymmetric waveguide structure has potential applications to produce ZnO-based light emitters with high extraction efficiency.

  8. Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H

    SciTech Connect

    Look, David; Droubay, Timothy C.; McCloy, John S.; Zhu, Zihua; Chambers, Scott A.

    2011-01-11

    Highly conductive thin films of ZnO doped with Ga were grown by pulsed-laser deposition (PLD) with 10 mTorr of H2 in the growth chamber. Compared with a more conventional method of producing conductive films of ZnO, i.e., growth in O2 followed by annealing in forming gas (5% H2 in Ar), the H2 method requires no post-growth anneal and also produces higher carrier concentrations and lower resistivities with better depth uniformity. As an example, a 65-nm-thick sample had a room-temperature mobility of 32 cm2/V-s, a concentration of 6.8 x 1020 cm-3, and a resistivity of 2.9 x 10^-4 ohm-cm. From a scattering model, the donor and acceptor concentrations were calculated as 8.9 x 1020 and 2.1 x 10^20 cm-3, respectively, as compared to the Ga and H concentrations of 11 x 10^20 and 1 x 10^20 cm-3. Thus, H does not play a significant role as a donor in this type of ZnO

  9. Degradation of transparent conductive properties of undoped ZnO and Ga-doped ZnO films left in atmospheric ambient for several years and trials to recover initial conductance

    SciTech Connect

    Akazawa, Housei

    2014-03-15

    This study evaluated the long-term stability of the transparent conductive properties of undoped ZnO and Ga-doped ZnO (GZO) films that had been left in an atmospheric ambient environment for 5 to 6 yr. When ZnO films are stored in a clean room with a controlled temperature and humidity of 23 °C and 45%, respectively, throughout the year, the increases in sheet resistance are less than 5% of their initial value. The ZnO films stored in a non-air-conditioned laboratory room, whose temperature varies between 5 and 35 °C and humidity varies between 30% and 70% per year, suffer from increases in the sheet resistance by almost 13%, which is associated with a slight rise in the near-infrared transmittance level. Postannealing of these degraded ZnO films at 150–200 °C recovers the initial conductance by removing the H{sub 2}O molecules that have penetrated the film. One hour of irradiation with electron cyclotron resonance Ar plasma effectively restores the conductive surfaces while maintaining a temperature below 70 °C. The GZO films containing a few weight percent of Ga{sub 2}O{sub 3} are stable even when stored in a non-air-conditioned laboratory room, with changes in the sheet resistance of less than 3%. The GZO films with a Ga{sub 2}O{sub 3} content larger than 10 wt. %, however, exhibit serious degradation probably due to the strong affinity of segregated Ga{sub 2}O{sub 3} domains with H{sub 2}O vapor molecules. Neither postannealing nor Ar plasma irradiation can recover the initial sheet resistance of these GZO films.

  10. Top-illuminated dye-sensitized solar cells with a room-temperature-processed ZnO photoanode on metal substrates and a Pt-coated Ga-doped ZnO counter electrode

    NASA Astrophysics Data System (ADS)

    Kyaw, A. K. K.; Sun, X. W.; Zhao, J. L.; Wang, J. X.; Zhao, D. W.; Wei, X. F.; Liu, X. W.; Demir, H. V.; Wu, T.

    2011-02-01

    We report on top-illuminated, fluorine tin oxide/indium tin oxide-free (FTO/ITO-free), dye-sensitized solar cells (DSCs) using room-temperature-processed ZnO layers on metal substrates as the working electrodes and Pt-coated Ga-doped ZnO layers (GZO) as the counter electrodes. These top-illuminated DSCs with GZO render comparable efficiency to those employing commercial FTO counter electrodes. Despite a lower current density, the top-illuminated DSCs result in a higher fill factor than conventional DSCs due to a low ohmic loss at the electrode/semiconductor interface. The effect of metal substrate on the performance of the resulting top-illuminated DSCs is also studied by employing various metals with different work functions. Ti is shown to be a suitable metal to be used as the working electrode in the top-illuminated device architecture owing to its low ohmic loss at the electrode/semiconductor interface, minimum catalytic activity on redox reactions and high resistance to corrosion by liquid electrolytes.

  11. Effect of RF power on the optical, electrical, mechanical and structural properties of sputtering Ga-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Tien, Chuen-Lin; Yu, Kuo-Chang; Tsai, Tsung-Yo; Liu, Ming-Chung

    2015-11-01

    We present the influences of radio-frequency (RF) power on the optical, electrical, mechanical, and structural properties of Ga-doped zinc oxide (GZO) thin films by RF magnetron sputtering at room temperature. GZO thin films were grown on unheated glass and silicon substrates using radio-frequency (RF) magnetron sputtering method with different RF powers (from 60 W to 160 W). The optical properties of the GZO thin film were determined by a UV-vis spectrophotometer. The residual stress in GZO films were measured by a home-made Twyman-Green interferometer with the fast Fourier transform (FFT) method. The surface roughness of GZO films were measured by a microscopic interferometry. The microstructure, composition and crystal orientation of the GZO films were determined by scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS), and X-ray diffraction (XRD). This paper revealed that the optical, electrical, mechanical, and structural properties of GZO thin film are subject to the RF power. For the optical spectrum measurement, an average optical transmittance in the visible region of the spectra of 85% was obtained. For the characteristic measurements, all the GZO thin films deposited by RF magnetron sputtering have compressive stress at different RF powers. A minimum residual stress of 0.24 GPa is found at the RF power of 140 W. A four-point probe method was used to measure the resistivity of the GZO thin films with different powers, the results indicate that the resistivity increases with increasing of RF power. In addition, the root-mean-square (RMS) surface roughness of GZO thin films slightly increases as the RF power is increasing. We have also compared the results with the relevant literatures.

  12. Growth of Cu2O on Ga-doped ZnO and their interface energy alignment for thin film solar cells

    NASA Astrophysics Data System (ADS)

    Wong, L. M.; Chiam, S. Y.; Huang, J. Q.; Wang, S. J.; Pan, J. S.; Chim, W. K.

    2010-08-01

    Cu2O thin films are deposited by direct current reactive magnetron sputtering on borofloat glass and indium tin oxide (ITO) coated glass at room temperature. The effect of oxygen partial pressure on the structures and properties of Cu2O thin films are investigated. We show that oxygen partial pressure is a crucial parameter in achieving pure phases of CuO and Cu2O. Based on this finding, we fabricate heterojunctions of p-type Cu2O with n-type gallium doped ZnO (GZO) on ITO coated glass substrates by pulsed laser deposition for GZO thin films. The energy band alignment for thin films of Cu2O/GZO on ITO glass is characterized using high-resolution x-ray photoelectron spectroscopy. The energy band alignment for the Cu2O/GZO heterojunctions is determined to be type II with a valence band offset of 2.82 eV and shows negligible effects of variation with gallium doping. The higher conduction band of the Cu2O relative to that of GZO in the obtained band alignment shows that the heterojunctions are suitable for solar cell application based on energy levels consideration.

  13. Growth of Cu{sub 2}O on Ga-doped ZnO and their interface energy alignment for thin film solar cells

    SciTech Connect

    Wong, L. M.; Chiam, S. Y.; Wang, S. J.; Pan, J. S.; Huang, J. Q.; Chim, W. K.

    2010-08-15

    Cu{sub 2}O thin films are deposited by direct current reactive magnetron sputtering on borofloat glass and indium tin oxide (ITO) coated glass at room temperature. The effect of oxygen partial pressure on the structures and properties of Cu{sub 2}O thin films are investigated. We show that oxygen partial pressure is a crucial parameter in achieving pure phases of CuO and Cu{sub 2}O. Based on this finding, we fabricate heterojunctions of p-type Cu{sub 2}O with n-type gallium doped ZnO (GZO) on ITO coated glass substrates by pulsed laser deposition for GZO thin films. The energy band alignment for thin films of Cu{sub 2}O/GZO on ITO glass is characterized using high-resolution x-ray photoelectron spectroscopy. The energy band alignment for the Cu{sub 2}O/GZO heterojunctions is determined to be type II with a valence band offset of 2.82 eV and shows negligible effects of variation with gallium doping. The higher conduction band of the Cu{sub 2}O relative to that of GZO in the obtained band alignment shows that the heterojunctions are suitable for solar cell application based on energy levels consideration.

  14. Metal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interface

    NASA Astrophysics Data System (ADS)

    Kumar, Manoj; Noh, Youngwook; Polat, Kinyas; Kemal Okyay, Ali; Lee, Dongjin

    2015-12-01

    Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-to-dark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer.

  15. Swift heavy ion irradiation of ZnO nanoparticles embedded in silica: Radiation-induced deoxidation and shape elongation

    NASA Astrophysics Data System (ADS)

    Amekura, H.; Okubo, N.; Ishikawa, N.; Tsuya, D.; Mitsuishi, K.; Nakayama, Y.; Singh, U. B.; Khan, S. A.; Mohapatra, S.; Avasthi, D. K.

    2013-11-01

    ZnO nanoparticles (NPs) embedded in amorphous SiO2 were irradiated with 200 MeV Xe14+ swift heavy ions (SHIs) to a fluence of 5.0 × 1013 ions/cm2. Optical linear dichroism was induced in the samples by the irradiation, indicating shape transformation of the NPs from spheres to anisotropic ones. Transmission electron microscopy observations revealed that some NPs were elongated to prolate shapes; the elongated NPs consisted not of ZnO but of Zn metal. The SHI irradiation induced deoxidation of small ZnO NPs and successive shape elongation of the deoxidized metal NPs.

  16. Swift heavy ion irradiation of ZnO nanoparticles embedded in silica: Radiation-induced deoxidation and shape elongation

    SciTech Connect

    Amekura, H.; Tsuya, D.; Mitsuishi, K.; Nakayama, Y.; Okubo, N.; Ishikawa, N.; Singh, U. B.; Khan, S. A.; Avasthi, D. K.; Mohapatra, S.

    2013-11-11

    ZnO nanoparticles (NPs) embedded in amorphous SiO{sub 2} were irradiated with 200 MeV Xe{sup 14+} swift heavy ions (SHIs) to a fluence of 5.0 × 10{sup 13} ions/cm{sup 2}. Optical linear dichroism was induced in the samples by the irradiation, indicating shape transformation of the NPs from spheres to anisotropic ones. Transmission electron microscopy observations revealed that some NPs were elongated to prolate shapes; the elongated NPs consisted not of ZnO but of Zn metal. The SHI irradiation induced deoxidation of small ZnO NPs and successive shape elongation of the deoxidized metal NPs.

  17. Magnetic properties of Ga doped cobalt ferrite: Compton scattering study

    SciTech Connect

    Sharma, Arvind Mund, H. S.; Ahuja, B. L.; Sahariya, Jagrati; Itou, M.; Sakurai, Y.

    2014-04-24

    We present the spin momentum density of Ga doped CoFe{sub 2}O{sub 4} at 100 K using magnetic Compton scattering. The measurement has been performed using circularly polarized synchrotron radiations of 182.65 keV at SPring8, Japan. The experimental profile is decomposed into its constituent profile to determine the spin moment at individual sites. Co atom has the maximum contribution (about 58%) in the total spin moment of the doped CoFe{sub 2}O{sub 4}.

  18. Transparent conductive and near-infrared reflective Ga-doped ZnO/Cu bilayer films grown at room temperature

    SciTech Connect

    Lu, J. G.; Bie, X.; Wang, Y. P.; Gong, L.; Ye, Z. Z.

    2011-05-15

    Bilayer films consisting of Ga-doped ZnO (GZO) and Cu layers were grown at room temperature by magnetron sputtering. The structural, electrical, and optical properties of GZO/Cu bilayer films were investigated in detail. The crystallinity and transparent-conductive properties of the films were correlated with the Cu layer thickness. The GZO/Cu bilayer film with the Cu layer thickness of 7.8 nm exhibited a low resistivity of 7.6x10{sup -5} {Omega} cm and an average visible transmittance of 74%. The reflectance was up to 65% in the near-infrared region for this film. The transparent conductive and near-infrared reflective GZO/Cu bilayer films could be readily deposited at room temperature. The GZO/Cu bilayer films were thermally stable when annealed at temperatures as high as 500 deg. C.

  19. The effect of ZnO nanoparticles on improved oil recovery in spontaneous imbibition mechanism of heavy oil production

    NASA Astrophysics Data System (ADS)

    Tajmiri, M.; Ehsani, M. R.; Mousavi, S. M.; Roayaei, E.; Emadi, A.

    2015-07-01

    Spontaneous imbibition (SI) gets a controversial subject in oil- wet carbonate reservoirs. The new concept of nanoparticles applications in an EOR area have been recently raised by researches about oil viscosity reduction and generate emulsion without surfactant. But a lot of questions have been remained about which nanoparticles can alter wettability from oil- wet to water- wet to improve oil recovery. This study introduces the new idea of adding ZnO nanoparticles (0.2%wt concentration) by experimental work on oil recovery. The main goals of this research were to prove that ZnO nanoparticles have the ability to reduce viscosity and also alter wettability. The ultimate objective was to determine the potential of these nanoparticles to imbibe into and displace oil. Through the use of Amott- cell, laboratory tests were conducted in two experiments on four cylindrical core samples (three sandstones and one carbonate) were taken from real Iranian heavy oil reservoir. In the first experiment, core samples were saturated by crude oil and in the second experiment, nanoparticles were flooding into core samples and then saturated by crude oil for about two weeks and after that they were immersed in distilled water and the amount of recovery was monitored during 30 days for both tests. We expected that ZnO nanoparticles decreased the surface tension which reduced the capillary forces through SI and wettability alteration took place towards a more water-wet system and caused the oil relative permeability to increase which dominated the gravitational forces to pull out the oil. Our results proved this expectation from ZnO nanoparticles clearly because carbonate core was oil- wet and the capillary pressure was high and negative to push water into the core so the original oil in place (OOIP) was zero whereas by adding ZnO nanoparticles OOIP was increased to 8.89%. SI yielded recovery values from 17.3, 2 and 15 without nanoparticles to 20.68, 17.57 and 36.2 % OOIP with

  20. Enhanced Thermoelectric Properties of Cu2ZnSnSe4 with Ga-doping

    DOE PAGESBeta

    Wei, Kaya; Beauchemin, Laura; Wang, Hsin; Porter, Wallace D.; Martin, Joshua; Nolas, George S.

    2015-08-10

    Gallium doped Cu2ZnSnSe4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, , and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S2/ρ) therefore increases with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach to achieving optimized thermoelectric properties and are part of the continuingmore » effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.« less

  1. Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature

    NASA Astrophysics Data System (ADS)

    Jang, Cholho; Zhizhen, Ye; Jianguo, Lü

    2015-12-01

    Ga doped ZnO (GZO)/Cu grid double layer structures were prepared at room temperature (RT). We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid spacing distance. The optical transmittance and sheet resistance of the GZO/Cu grid double layer are higher than that of the GZO/Cu film double layer regardless of the Cu grid spacing distance and increase as the Cu grid spacing distance increases. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid double layer well follow the trend of the experimentally observed transmittance and sheet resistance ones. For the GZO/Cu grid double layer with a Cu grid spacing distance of 1 mm, the highest figure of merit (ΦTC = 6.19 × 10-3 Ω-1) was obtained. In this case, the transmittance, resistivity and filling factor (FF) of the GZO/Cu grid double layer are 83.74%, 1.10 × 10-4 Ω·cm and 0.173, respectively. Project supported by the Key Project of the National Natural Science Foundation of China (No. 91333203), the Program for Innovative Research Team in University of Ministry of Education of China (No. IRT13037), the National Natural Science Foundation of China (No. 51172204), and the Zhejiang Provincial Department of Science and Technology of China (No. 2010R50020).

  2. Write-once memory effects observed in Ga-doped ZnO/organic semiconductor/MoO3/Au structures

    NASA Astrophysics Data System (ADS)

    Hasegawa, Junya; Nagase, Takashi; Kobayashi, Takashi; Naito, Hiroyoshi

    2016-03-01

    Electrical switching phenomena in a device configuration of inverted organic light-emitting diodes have been observed. The device structure was Ga-doped ZnO (GZO)/N,N‧-dicarbazolyl-3,5-benzene (m-CP)/MoO3 (10 nm)/Au (50 nm) fabricated by solution coating. The devices are write-once-read-many-times (WORM) memory devices with low switching voltage (<3 V) and long retention time (>700 h). Equivalent circuits in OFF and ON states are determined from the Cole-Cole plots measured by impedance spectroscopy. The switching phenomena and nonvolatile memory behavior are attributable to the formation conductive Au filaments in the m-CP layer of the ON state.

  3. First-principle study on Ag-2N heavy codoped of p-type graphene-like ZnO nanosheet

    NASA Astrophysics Data System (ADS)

    Zhang, W. X.; Li, T.; He, C.; Wu, X. L.; Duan, L.; Li, H.; Xu, L.; Gong, S. B.

    2015-02-01

    In this article, two different Ag-2N heavy codoped of graphene-like ZnO nanosheets have been investigated based on first-principles density-functional theory. The geometric optimization, Density of States (DOS) and Band structure (BS) for all models are calculated, respectively. The results indicate that Ag substituted on the cation site (AgZn) exhibit a strong attractive interaction with a nitrogen acceptor located at the nearest-neighbor oxygen site, forming passive Ag-N complex. This study can be a theoretical guidance to improve the electrical conductivity of p-type graphene-like ZnO nanosheet by heavy codoping.

  4. Excellent low-field magnetoresistance effect in Ga-doped MnZn ferrites

    SciTech Connect

    Kim, Hyo-Jin; Yoo, Sang-Im

    2014-12-15

    An excellent low field magnetoresistance (LFMR) property was achieved from the Ga-doped (Mn{sub 0.8}Zn{sub 0.2})Fe{sub 2}O{sub 4} (MnZn) ferrites at room temperature (RT). For this study, undoped and Ga-doped MnZn ferrites with the nominal compositions of (Mn{sub 0.8}Zn{sub 0.2}){sub 1−x}Ga{sub x}Fe{sub 2}O{sub 4} (x = 0 ∼ 0.1) were prepared by the conventional solid state reaction at 1400°C for 2 h in air. From the magneto-transport measurements, Ga-doped MnZn ferrites were found to have not only much lower resistivity values but also greatly improved LFMR ratios in comparison with undoped sample. The highest maximum LFMR ratio of 2.5% at 290 K in 0.5 kOe was achievable from 2 mol% Ga-doped MnZn ferrite. This large LFMR effect is attributable to an increase in spin electrons by Ga{sup 3+} ion substitution for the (Mn, Zn){sup 2+} site.

  5. Low-temperature processed Ga-doped ZnO coatings from colloidal inks.

    PubMed

    Della Gaspera, Enrico; Bersani, Marco; Cittadini, Michela; Guglielmi, Massimo; Pagani, Diego; Noriega, Rodrigo; Mehra, Saahil; Salleo, Alberto; Martucci, Alessandro

    2013-03-01

    We present a new colloidal synthesis of gallium-doped zinc oxide nanocrystals that are transparent in the visible and absorb in the near-infrared. Thermal decomposition of zinc stearate and gallium nitrate after hot injection of the precursors in a mixture of organic amines leads to nanocrystals with tunable properties according to gallium amount. Substitutional Ga(3+) ions trigger a plasmonic resonance in the infrared region resulting from an increase in the free electrons concentration. These nanocrystals can be deposited by spin coating, drop casting, and spray coating resulting in homogeneous and high-quality thin films. The optical transmission of the Ga-ZnO nanoparticle assemblies in the visible is greater than 90%, and at the same time, the near-infrared absorption of the nanocrystals is maintained in the films as well. Several strategies to improve the films electrical and optical properties have been presented, such as UV treatments to remove the organic compounds responsible for the observed interparticle resistance and reducing atmosphere treatments on both colloidal solutions and thin films to increase the free carriers concentration, enhancing electrical conductivity and infrared absorption. The electrical resistance of the nanoparticle assemblies is about 30 kΩ/sq for the as-deposited, UV-exposed films, and it drops down to 300 Ω/sq after annealing in forming gas at 450 °C, comparable with state of the art tin-doped indium oxide coatings deposited from nanocrystal inks. PMID:23394063

  6. Effects of gallium doping on properties of a-plane ZnO films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Han, Seok Kyu; Lee, Hyo Sung; Lim, Dong Seok; Hong, Soon-Ku; Yoon, Nara; Oh, Dong-Cheol; Ahn, Byung Jun; Song, Jung-Hoon; Yao, Takafumi

    2011-05-15

    The authors report on the structural, optical, and electrical properties of Ga-doped a-plane (1120) ZnO films grown by plasma-assisted molecular beam epitaxy. Ga doping level was controlled by changing the Ga cell temperatures from 350 to 470 deg. C with an interval of 30 deg. C. With up to Ga cell temperatures of 440 deg. C, single crystalline Ga-doped a-plane ZnO films were grown; however, the sample with a Ga cell temperature of 470 deg. C showed polycrystalline features. The typical striated surface morphology normally observed from undoped ZnO films disappeared with Ga doping. ZnO films doped with Ga cell temperatures up to 440 deg. C did not show a significant change in full width at half maximum (FWHM) values of (1120) x-ray rocking curves by doping. The smallest FWHM values were 0.433 deg. ({phi}=90 deg.) and 0.522 deg. ({phi}=0 deg. ) for the sample with a Ga cell temperature of 350 deg. C. The polycrystalline ZnO film with excessive Ga doping at the Ga cell temperature of 470 deg. C showed significantly increased FWHM values. Hall measurements at room temperature (RT) revealed that electron concentration began to be saturated at the Ga cell temperature of 440 deg. C and electron mobility was drastically reduced at the Ga cell temperature of 470 deg. C. The carrier concentration of Ga-doped ZnO films were controlled from 7.2x10{sup 18} to 3.6x10{sup 20} cm{sup -3}. Anisotropic electrical properties (carrier concentration and Hall mobility) were observed in measurements by the van der Pauw method depending on the direction (c- or m-direction) for the undoped sample but not observed for the doped samples. RT photoluminescence (PL) spectra from the Ga-doped single crystalline ZnO films showed dominant near band edge (NBE) emissions with negligibly deep level emission. The NBE intensity in PL spectra increases with Ga doping.

  7. Enhanced Thermoelectric Properties of Cu2ZnSnSe4 with Ga-doping

    SciTech Connect

    Wei, Kaya; Beauchemin, Laura; Wang, Hsin; Porter, Wallace D.; Martin, Joshua; Nolas, George S.

    2015-08-10

    Gallium doped Cu2ZnSnSe4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, , and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S2/ρ) therefore increases with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach to achieving optimized thermoelectric properties and are part of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.

  8. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    NASA Astrophysics Data System (ADS)

    Darwish, Ahmed A.; Fadlallah, Mohamed M.; Badawi, Ashraf; Maarouf, Ahmed A.

    2016-07-01

    Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  9. Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

    NASA Astrophysics Data System (ADS)

    Akgul, Guvenc; Aksoy Akgul, Funda; Emrah Unalan, Husnu; Turan, Rasit

    2016-04-01

    In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1 0 0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)-voltage (V) measurements under simulated solar irradiation of AM 1.5 G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37 V, 3.30 mA cm-2, 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100 nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.

  10. Dye-Sensitized Solar Cells Combining ZnO Nanotip Arrays and Nonliquid Gel Electrolytes

    NASA Astrophysics Data System (ADS)

    Chen, Hanhong; Duan, Ziqing; Lu, Yicheng; Du Pasquier, Aurelien

    2009-08-01

    We present a dye-sensitized solar cell (DSSC) using a nanostructured ZnO photoelectrode and a gel electrolyte. The photoelectrode consists of well-aligned ZnO nanotips on a Ga-doped ZnO (GZO) transparent conducting film. The GZO film (400 nm, sheet resistance ~25 Ω/sq, transmittance over 85% in the visible wavelength) and ZnO nanotips (3.2 μm length) are sequentially grown on a glass substrate using metalorganic chemical vapor deposition. The ZnO photoelectrode is sensitized with dye N719 and impregnated with N-methyl pyrolidinone (NMP) gelled with poly(vinyl-difluoroethylene-hexafluoropropylene) copolymer (PVDF-HFP). The cell exhibits an open-circuit voltage of 726 mV and a power conversion efficiency of 0.89% under one sun illumination. The aging testing shows that the cell using a gel electrolyte has better stability than its liquid electrolyte counterpart.

  11. CORRIGENDUM: Spin-coated Ga-doped ZnO transparent conducting thin films for organic light-emitting diodes Spin-coated Ga-doped ZnO transparent conducting thin films for organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Nayak, Pradipta K.; Kim, Jinwoo; Chung, Seungjun; Jeong, Jaewook; Lee, Changhee; Hong, Yongtaek

    2009-07-01

    Two corrections should be made to the previously published version of this article. On page 1, right-hand column, the radius of Zn should be read as 0.074 nm. This value is taken from Lide D R 1991 Handbook of Chemistry and Physics 71st edn (Boca Raton, FL: CRC Press). In the first paragraph of section 2, Diethanolammine and its acronym DEA should be corrected to Monoethanolamine and MEA.

  12. Single phase formation of Co-implanted ZnO thin films by swift heavy ion irradiation: Optical studies

    SciTech Connect

    Kumar, Ravi; Singh, Fouran; Angadi, Basavaraj; Choi, Ji-Won; Choi, Won-Kook; Jeong, Kwangho; Song, Jong-Han; Khan, M. Wasi; Srivastava, J. P.; Kumar, Ajay; Tandon, R. P.

    2006-12-01

    Low temperature photoluminescence and optical absorption studies on 200 MeV Ag{sup +15} ion irradiated Co-implanted ZnO thin films were studied. The Co clusters present in as implanted samples were observed to be dissolved using 200 MeV Ag{sup +15} ion irradiation with a fluence of 1x10{sup 12} ions/cm{sup 2}. The photoluminescence spectrum of pure ZnO thin film was characterized by the I{sub 4} peak due to the neutral donor bound excitons and the broad green emission. The Co-doped ZnO films show three sharp levels and two shoulders corresponding to 3t{sub 2g} and 2e{sub g} levels of crystal field splitted Co d orbitals, respectively. The ultraviolet-visible absorption spectroscopy also shows the systematic variation of band gap after 200 MeV Ag{sup +15} ion irradiation.

  13. Effect of deposition times on structure of Ga-doped ZnO thin films as humidity sensor

    SciTech Connect

    Khalid, Faridzatul Shahira; Awang, Rozidawati

    2014-09-03

    Gallium doped zinc oxide (GZO) has good electrical property. It is widely used as transparent electrode in photovoltaic devices, and sensing element in gas and pressure sensors. GZO thin film was prepared using magnetron sputtering. Film deposition times were set at 10, 15, 20, 25 and 30 minutes to get samples of different thickness. X-ray diffraction (XRD) was used to determine the structure of GZO thin films. Structure for GZO thin film is hexagonal wurtzite structure. Morphology and thickness of GZO thin films was observed from FESEM micrographs. Grain size and thickness of thin films improved with increasing deposition times. However, increasing the thickness of thin films occur below 25 minutes only. Electrical properties of GZO thin films were studied using a four-point probe technique. The changes in the structure of the thin films lead to the changed of their electrical properties resulting in the reduction of the film resistance. These thin films properties significantly implying the potential application of the sample as a humidity sensor.

  14. Aging effects of the precursor solutions on the properties of spin coated Ga-doped ZnO thin films

    SciTech Connect

    Serrao, Felcy Jyothi Dharmaprakash, S. M.

    2015-06-24

    In this study, gallium doped zinc oxide thin films (GZO) were grown on a glass substrate by a simple sol-gel process and spin coating technique using zinc acetate and gallium nitrate (3at%) as precursors for Zn and Ga ions respectively. The effects of aging time of the precursor solution on the structural and optical properties of the GZO films were investigated. The surface morphology, grain size, film thickness and optical properties of the GZO films were found to depend directly on the sol aging time. XRD studies reveal that the films are polycrystalline with a hexagonal wurtzite structure and show the c-axis grain orientation. Optical transmittance spectra of all the films exhibited transmittance higher than about 82% within the visible wavelength region. A sharp fundamental absorption edge with a slight blue shifting was observed with an increase in sol aging time which can be explained by Burstein-Moss effect. The result indicates that an appropriate aging time of the sol is important for the improvement of the structural and optical properties of GZO thin films derived from sol-gel method.

  15. Effects of deposition temperature on the effectiveness of hydrogen doping in Ga-doped ZnO thin films

    SciTech Connect

    Kim, Dong-Ho; Lee, Sung-Hun; Lee, Gun-Hwan; Kim, Hyun-Bum; Kim, Kwang Ho; Lee, Yoon-Gyu; Yu, Tae-Hwan

    2010-07-15

    Gallium-doped zinc oxide thin films were prepared on glass substrates by dc magnetron sputtering under various hydrogen contents in sputtering ambient. The carrier concentration of the films deposited at low-temperatures (80 and 160 deg. C) was increased due to the incorporation of hydrogen atoms, acting as shallow donors. A low resistivity of 4.0x10{sup -4} {Omega} cm was obtained for the film grown at 160 deg. C with H{sub 2} 10%, which has a carrier concentration of 8.2x10{sup 20}/cm{sup 3}. The beneficial effect of hydrogen doping was not observed for the films deposited at 270 deg. C. Both carrier concentration and mobility were decreased by the addition of hydrogen gas in the sputtering ambient. Variations in the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. The hydrogen incorporation was found to induce the lattice expansion and the free carrier absorption in near infrared range. The investigation of the structural and optical properties of the films upon annealing also revealed that the incorporated hydrogen atoms are unstable at high temperature, which is consistent with the results obtained in the electrical properties.

  16. Enhanced thermoelectric properties of Ga-doped In2O3 ceramics via synergistic band gap engineering and phonon suppression.

    PubMed

    Liu, Yong; Xu, Wei; Liu, Da-Bo; Yu, Meijuan; Lin, Yuan-Hua; Nan, Ce-Wen

    2015-05-01

    Ga doped In2O3-based thermoelectric materials were prepared by spark plasma sintering (SPS) using sintered powders in the low temperature solid phase. The solubility of Ga in In2O3 is about 10 at%, much larger than other elements such as Ge, Ce, etc. The larger solubility of Ga allows us to optimize the thermal and electrical transport properties of Ga doped In2O3 in a wider window. While tuning the concentration of dopants, the thermoelectric performance of Ga doped In2O3 was enhanced through a synergistic approach combining band-gap engineering and phonon suppression. The power factor increases from ∼0.5 × 10(-4) to ∼9.6 × 10(-4) W mK(-2) at 700 °C while thermal conductivity reduces from ∼4 to ∼2 W mK(-1) at 700 °C in In1.9Ga0.1O3. The maximum ZT of 0.37, increased by a factor of 4 from the pristine In2O3, is achieved in In1.9Ga0.1O3 at 700 °C. PMID:25829235

  17. The enhanced spontaneous dielectric polarization in Ga doped CuFeO{sub 2}

    SciTech Connect

    Shi, Liran; Wei, Meng; Huang, Junwei; Chen, Borong; Shang, Cui; Xia, Zhengcai Long, Zhuo; Ouyang, Zhongwen; Xia, Nianming

    2014-11-07

    The magnetic and dielectric polarization properties of the single crystal samples of CuFe{sub 1−x}Ga{sub x}O{sub 2} (x = 0 and 0.02) are investigated. Experimental results show that the magnetization and dielectric polarizations are anisotropy and coupled together. Compared with pure CuFeO{sub 2}, in the case with the magnetic field parallel to the c axis, a field-induced phase transition with a hysteresis is clearly observed between the five-sublattice (5SL) and three-sublattice (3SL) phases. Specially, an obvious spontaneous dielectric polarization is observed in CuFe{sub 0.98}Ga{sub 0.02}O{sub 2} in a lower magnetic field region, indicating that the Ga doping has an effect on the enhancement of spontaneous dielectric polarization. Based on the dilution effect, change of exchange interaction, and partial release of the spin frustration due to the structural modulation of the Ga ion dopant, the origin of the magnetization, and spontaneous polarization characteristics are discussed and the complete dielectric polarization diagrams are assumed.

  18. Enhancement of photo sensor properties of nanocrystalline ZnO thin film by swift heavy ion irradiation

    SciTech Connect

    Mahajan, S. V.; Upadhye, D. S.; Bagul, S. B.; Shaikh, S. U.; Birajadar, R. B.; Siddiqui, F. Y.; Huse, N. P.; Sharma, R. B. E-mail: rps.phy@gmail.com

    2015-06-24

    Nanocrystalline Zinc Oxide (ZnO) thin film prepared by Low cost Successive Ionic Layer Adsorption and Reaction (SILAR) method. This film was irradiated by 120 MeV Ni{sup 7+} ions with the fluence of 5x10{sup 12}ions/cm{sup 2}. The X-ray diffraction study was shows polycrystalline nature with wurtzite structure. The optical properties as absorbance were determined using UV-Spectrophotometer and band gap was also calculated. The Photo Sensor nature was calculated by I-V characteristics with different sources of light 40W, 60W and 100W.

  19. Monte-Carlo modeling of excitation of the electron subsystem of ZnO and MgO in tracks of swift heavy ions

    NASA Astrophysics Data System (ADS)

    Voronkov, R. A.; Rymzhanov, R. A.; Medvedev, N. A.; Volkov, A. E.

    2015-12-01

    Monte Carlo code TREKIS is applied to trace kinetics of excitation of the electron subsystem of ZnO and MgO after an impact of a swift heavy ion (SHI). The event-by-event simulations describe excitation of the electron subsystems by a penetrating SHI, spatial spreading of generated electrons and secondary electron cascades. Application of the complex dielectric function (CDF) formalism for calculation of the cross sections of charged particle interaction with a solid target allows to consider collective response of the target to perturbation, which arises from the spatial and temporal correlations in the target electrons ensemble. The method of CDF reconstruction from the experimental optical data is applied. Electron inelastic mean free paths calculated within the CDF formalism are in very good agreement with NIST database. SHI energy losses agree well with those from SRIM and CasP codes. The radial distributions of valence holes, core holes and delocalized electrons as well as their energy densities in SHI tracks are calculated. The analysis of these distributions is presented.

  20. Plasmon generation in sputtered Ga-doped MgZnO thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Awasthi, Vishnu; Pandey, Sushil Kumar; Garg, Vivek; Sengar, Brajendra S.; Sharma, Pankaj; Kumar, Shailendra; Mukherjee, C.; Mukherjee, Shaibal

    2016-06-01

    The crystalline, electrical, morphological, optical properties and plasmonic behaviour of Ga doped MgZnO (GMZO) thin films grown at different substrate temperatures (200-600 °C) by a dual ion beam sputtering (DIBS) system are investigated. Transmittance value of more than ˜94% in 400-1000 nm region is observed for all GMZO films. The particle plasmon features can be detected in the absorption coefficient spectra of GMZO grown at 500 and 600 °C in the form of a peak at ˜4.37 eV, which corresponds to a plasmon resonance peak of nanoclusters formed in GMZO. The presence of such plasmonic features is confirmed by ultraviolet photoelectron spectroscopy measurements. The values of particle plasmon resonance energy of various nanoclusters are in the range of solar spectrum, and these can easily be tuned and excited at the desirable wavelengths while optimizing the efficiency of solar cells (SCs) by simple alteration of DIBS growth temperature. These nanoclusters are extremely promising to enhance the optical scattering and trapping of the incident light, which increases the optical path length in the absorber layer of cost-effective SCs and eventually increases its efficiency.

  1. 266  nm ultraviolet light generation in Ga-doped BaAlBO3F2 crystals.

    PubMed

    Yang, Lei; Yue, Yinchao; Yang, Feng; Hu, Zhanggui; Xu, Zuyan

    2016-04-01

    BaAlBO3F2 (BABF) crystals are a recently developed and promising nonlinear optical material, notably for the third harmonic generation of ultraviolet (UV) light at 355 nm. However, the fourth harmonic generation of UV light at 266 nm has never been obtained by using a BABF crystal due to its relatively small birefringence. We demonstrate that the birefringence of BABF can be effectively increased by doping it with Ga3+. The fourth harmonic generation of UV light at 266 nm was achieved for the first time in a Ga-doped BABF crystal. PMID:27192296

  2. Characteristics of Ga-Rich Cu(In, Ga)Se2 Solar Cells Grown on Ga-Doped ZnO Back Contact.

    PubMed

    Sun, Qian; Kim, Kyoung-Bo; Jeon, Chan-Wook

    2016-05-01

    Wide bandgap Cu(In,Ga)Se2 (CIGS) thin films were deposited on Ga-rich Ga:ZnO (GZO) or MoN/GZO by single-stage co-evaporation. CIGS/TCO interface phases, such as resistive n-type Ga2O3, which are likely to have formed during the high temperature growth of Ga-rich CIGS, can deteriorate the solar cell performance. Although some Ga accumulation was observed in both of the CIGS/GZO and CIGS/MoN/GZO interfaces formed at 520 degrees C, the Ga oxide layer was absent. On the other hand, their current-voltage characteristics showed strong roll-over behavior regardless of the MoN diffusion barrier. The strong Schottky barrier formation at the CLGS/GZO junction due to the low work function of GZO, was attributed to current blocking at a high forward bias. PMID:27483870

  3. Significant mobility enhancement in extremely thin highly doped ZnO films

    SciTech Connect

    Look, David C.; Heller, Eric R.; Yao, Yu-Feng; Yang, C. C.

    2015-04-13

    Highly Ga-doped ZnO (GZO) films of thicknesses d = 5, 25, 50, and 300 nm, grown on 160-nm ZnO buffer layers by molecular beam epitaxy, had 294-K Hall-effect mobilities μ{sub H} of 64.1, 43.4, 37.0, and 34.2 cm{sup 2}/V-s, respectively. This extremely unusual ordering of μ{sub H} vs d is explained by the existence of a very high-mobility Debye tail in the ZnO, arising from the large Fermi-level mismatch between the GZO and the ZnO. Scattering theory in conjunction with Poisson analysis predicts a Debye-tail mobility of 206 cm{sup 2}/V-s at the interface (z = d), falling to 58 cm{sup 2}/V-s at z = d + 2 nm. Excellent fits to μ{sub H} vs d and sheet concentration n{sub s} vs d are obtained with no adjustable parameters.

  4. Stable highly conductive ZnO via reduction of Zn vacancies

    SciTech Connect

    Look, David C.; Droubay, Timothy C.; Chambers, Scott A.

    2012-09-04

    Growth of Ga-doped ZnO by pulsed laser deposition at 200 C in an ambient of Ar and H2 produces a resistivity  of ~ 1.5 x 10-4 -cm, stable to 500 C. Annealing on Zn foil reduces  to ~ 1.2 x 10-4 -cm, one of the lowest values ever reported. The key is reducing the Zn-vacancy acceptor concentration NA to 5 x 1019, only 3% of the Ga-donor concentration ND of 1.6 x 1021 cm-3, with ND and NA determined from a degenerate mobility theory. The plasmonic wavelength is 1060 nm, further bridging the gap between metals and semiconductors.

  5. 100 MeV Ni{sup +7} swift heavy ion induced magnetism in cobalt doped ZnO thin films

    SciTech Connect

    Kumar, Sunil Singh, D. P.; Kumar, Ravi

    2014-04-24

    Zn{sub 0.90}Co{sub 0.10}O thin films were prepared using Sol-Gel spin coating method. Films were irradiated with 100 MeV Ni{sub +7} Swift Heavy Ions (SHI) with fluences 1× 10{sup 13} ions/cm{sup 2} using 15 UD tandem accelerator at IUAC New Delhi and its effect were studied on the structural, optical and magnetic properties of irradiated thin films. X-ray diffraction studies show single phase films with preferred c-axis orientation after irradiation. Ultraviolet-visible absorption spectroscopy shows red shift in the band gap of irradiated thin films. Magnetic field dependence of magnetization reveals weak ferromagnetism in irradiated thin films. AFM studies shows significant increase in the grain size and the surface roughness of the films after irradiation.

  6. Influence of Ga doping on rare earth moment ordering and ferromagnetic transition in Nd0.7Sr0.3Co1-xGaxO3

    NASA Astrophysics Data System (ADS)

    Kumar, Pawan; Maheswar Repaka, D. V.; Aparnadevi, M.; Tripathi, T. S.; Mahendiran, R.

    2013-05-01

    We report the impact of dilution of Co sublattice by non-magnetic Ga3+ ion on the magnetic, electrical, and magnetoresistive properties in Nd0.7Sr0.3Co1-xGaxO3 for x = 0-0.12. Field-cooled magnetization of the parent compound (x = 0) shows an anomalous maximum at T* = 54.6 K much below the onset of ferromagnetic transition (TC = 160 K) of the Co sublattice, which is attributed to the polarization of Nd-4f moments antiparallel to the Co-3d sublattice. Both TC and T* shift to low temperature with increasing x and the Nd-4f spin reverses from antiparallel to parallel with increasing strength of the magnetic field. While the value of high field magnetization is not seriously affected by Ga doping, coercive field at 10 K increases dramatically with increasing x. Ga substitution transforms ferromagnetic metallic state into ferromagnetic insulating state for x ≥ 0.03 and decreases the magnitude of magnetoresistance from 6% for x = 0% to 0.5% for x = 0.12.

  7. Ga-doped TiZnO transparent conductive oxide used as an alternative anode in blue, green, and red phosphorescent OLEDs.

    PubMed

    Chang, Chih-Hao; Liu, Wei-Sheng; Wu, Shen-Yu; Huang, Jun-Lin; Hung, Chao-Yu; Chang, Yu-Lin; Wu, Ying-Chieh; Chen, Wei-Chih; Wu, Yi-Cheng

    2014-09-28

    X-ray diffraction was used to study the optoelectronic characteristics of Ga-doped TiZnO (GTZO) thin film and revealed increased crystallinity with annealing temperatures ranging from as-grown to 450 °C. The low thin film resistivity of 6.1 × 10(-4) Ω cm and the average high optical transmittance of 93% in the wavelength range between 350 and 800 nm make GTZO an alternative candidate for application in organic light-emitting diodes (OLEDs). Both GTZO and indium-tin-oxide (ITO) anodes are employed for the successful fabrication of blue, green, and red phosphorescent OLEDs. The similar device electrical characteristics observed could be interpreted as evidence of the effectiveness of doping Ga in TiZnO. The simplified tri-layer blue, green, and red phosphorescent OLEDs demonstrated high performance with respective maximum efficiencies of 19.0%, 14.5%, and 9.1%, representing an improvement over ITO-based OLEDs. Furthermore, the OLEDs with the GTZO anode exhibited superior performance at higher current densities, demonstrating high potential for OLED display and lighting applications. PMID:25109371

  8. Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

    NASA Astrophysics Data System (ADS)

    Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2016-05-01

    Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnO thin films. The minimum resistivity of 2.54 × 10-3 Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.

  9. Effects of rapid thermal annealing on properties of Ga-doped Mg{sub x}Zn{sub 1−x}O films and Ga-doped Mg{sub x}Zn{sub 1−x}O/AlGaN heterojunction diodes

    SciTech Connect

    Hsueh, Kuang-Po E-mail: kphsueh@mail.vnu.edu.tw; Cheng, Po-Wei

    2014-08-14

    This study investigated the thermal annealing effects of Ga-doped Mg{sub x}Zn{sub 1−x}O (GMZO) films and GMZO/AlGaN heterojunction diodes. GMZO films were deposited using a radio-frequency magnetron sputtering system with a 4-in. ZnO/MgO/Ga{sub 2}O{sub 3} target. In addition, the Hall results, X-ray diffraction, transparent performance, and X-ray photoelectron spectroscopy (XPS) spectra were measured. The as-grown GMZO film deposited in this study exhibited a high transparency with transmittances over 95% in the visible region (360–700 nm) and a sharp absorption edge in the UV region (275–350 nm). The phenomenon of phase separation in the GMZO films was investigated based on the XPS spectra, revealing that an increase in the O-Zn signal accompanied a decline in the O-Ga signal after the thermal annealing. Moreover, the current-voltage (I-V) characteristics of the GMZO/AlGaN n-p junction diodes were examined at different annealing temperatures. The light emission derived from the forward-biased junction and near-ultraviolet (near-UV) light emission was evident at all p-n junctions. The n-GMZO/p-AlGaN diode annealed at 800 °C exhibited a brighter near-UV emission compared with the other diodes. In addition, the spectrum of diode annealed at 800 °C exhibited a broad peak at 474 nm (2.62 eV) and a tail of the emission spectrum extending to 850 nm. Based on these findings, the GMZO films are suitable for forming transparent contact layers in optoelectronic devices, and the n-GMZO/p-AlGaN junction diode is a feasible alternative in near-UV light emission devices.

  10. Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

    SciTech Connect

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

    2011-07-15

    B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10{sup -4}{Omega} cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm{sup 2}/Vs and carrier concentrations on the order of 10{sup 20} cm{sup -3}. All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10{sup -3}-10{sup -4}{Omega} cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

  11. High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation.

    PubMed

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2016-12-01

    Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm(2)/Vs with an N of 2.22 × 10(20) cm(-3). PMID:27365000

  12. High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

    NASA Astrophysics Data System (ADS)

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2016-06-01

    Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility ( μ H) of 50.1 cm2/Vs with a carrier concentration ( N) of 2.55 × 1020 cm-3. Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm2/Vs with an N of 2.22 × 1020 cm-3.

  13. A-site compositional effects in Ga-doped hollandite materials of the form BaxCsyGa2x+yTi8-2x-yO16: implications for Cs immobilization in crystalline ceramic waste forms.

    PubMed

    Xu, Yun; Wen, Yi; Grote, Rob; Amoroso, Jake; Shuller Nickles, Lindsay; Brinkman, Kyle S

    2016-01-01

    The hollandite structure is a promising crystalline host for Cs immobilization. A series of Ga-doped hollandite BaxCsyGa2x+yTi8-2x-yO16 (x = 0, 0.667, 1.04, 1.33; y = 1.33, 0.667, 0.24, 0) was synthesized through a solid oxide reaction method resulting in a tetragonal hollandite structure (space group I4/m). The lattice parameter associated with the tunnel dimension was found to increases as Cs substitution in the tunnel increased. A direct investigation of cation mobility in tunnels using electrochemical impedance spectroscopy was conducted to evaluate the ability of the hollandite structure to immobilize cations over a wide compositional range. Hollandite with the largest tunnel size and highest aspect ratio grain morphology resulting in rod-like microstructural features exhibited the highest ionic conductivity. The results indicate that grain size and optimized Cs stoichiometry control cation motion and by extension, the propensity for Cs release from hollandite. PMID:27273791

  14. A-site compositional effects in Ga-doped hollandite materials of the form BaxCsyGa2x+yTi8−2x−yO16: implications for Cs immobilization in crystalline ceramic waste forms

    PubMed Central

    Xu, Yun; Wen, Yi; Grote, Rob; Amoroso, Jake; Shuller Nickles, Lindsay; Brinkman, Kyle S.

    2016-01-01

    The hollandite structure is a promising crystalline host for Cs immobilization. A series of Ga-doped hollandite BaxCsyGa2x+yTi8−2x−yO16 (x = 0, 0.667, 1.04, 1.33; y = 1.33, 0.667, 0.24, 0) was synthesized through a solid oxide reaction method resulting in a tetragonal hollandite structure (space group I4/m). The lattice parameter associated with the tunnel dimension was found to increases as Cs substitution in the tunnel increased. A direct investigation of cation mobility in tunnels using electrochemical impedance spectroscopy was conducted to evaluate the ability of the hollandite structure to immobilize cations over a wide compositional range. Hollandite with the largest tunnel size and highest aspect ratio grain morphology resulting in rod-like microstructural features exhibited the highest ionic conductivity. The results indicate that grain size and optimized Cs stoichiometry control cation motion and by extension, the propensity for Cs release from hollandite. PMID:27273791

  15. A-site compositional effects in Ga-doped hollandite materials of the form BaxCsyGa2x+yTi8‑2x‑yO16: implications for Cs immobilization in crystalline ceramic waste forms

    NASA Astrophysics Data System (ADS)

    Xu, Yun; Wen, Yi; Grote, Rob; Amoroso, Jake; Shuller Nickles, Lindsay; Brinkman, Kyle S.

    2016-06-01

    The hollandite structure is a promising crystalline host for Cs immobilization. A series of Ga-doped hollandite BaxCsyGa2x+yTi8‑2x‑yO16 (x = 0, 0.667, 1.04, 1.33; y = 1.33, 0.667, 0.24, 0) was synthesized through a solid oxide reaction method resulting in a tetragonal hollandite structure (space group I4/m). The lattice parameter associated with the tunnel dimension was found to increases as Cs substitution in the tunnel increased. A direct investigation of cation mobility in tunnels using electrochemical impedance spectroscopy was conducted to evaluate the ability of the hollandite structure to immobilize cations over a wide compositional range. Hollandite with the largest tunnel size and highest aspect ratio grain morphology resulting in rod-like microstructural features exhibited the highest ionic conductivity. The results indicate that grain size and optimized Cs stoichiometry control cation motion and by extension, the propensity for Cs release from hollandite.

  16. Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells

    SciTech Connect

    Wang, Chao-Chun; Wuu, Dong-Sing; Lin, Yang-Shih; Lien, Shui-Yang; Huang, Yung-Chuan; Liu, Chueh-Yang; Chen, Chia-Fu; Nautiyal, Asheesh; Lee, Shuo-Jen

    2011-11-15

    In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells.

  17. Defects in ZnO

    NASA Astrophysics Data System (ADS)

    McCluskey, M. D.; Jokela, S. J.

    2009-10-01

    Zinc oxide (ZnO) is a wide band gap semiconductor with potential applications in optoelectronics, transparent electronics, and spintronics. The high efficiency of UV emission in this material could be harnessed in solid-state white lighting devices. The problem of defects, in particular, acceptor dopants, remains a key challenge. In this review, defects in ZnO are discussed, with an emphasis on the physical properties of point defects in bulk crystals. As grown, ZnO is usually n-type, a property that was historically ascribed to native defects. However, experiments and theory have shown that O vacancies are deep donors, while Zn interstitials are too mobile to be stable at room temperature. Group-III (B, Al, Ga, and In) and H impurities account for most of the n-type conductivity in ZnO samples. Interstitial H donors have been observed with IR spectroscopy, while substitutional H donors have been predicted from first-principles calculations but not observed directly. Despite numerous reports, reliable p-type conductivity has not been achieved. Ferromagnetism is complicated by the presence of secondary phases, grain boundaries, and native defects. The famous green luminescence has several possible origins, including Cu impurities and Zn vacancies. The properties of group-I (Cu, Li, and Na) and group-V (N, P, As, and Sb) acceptors, and their complexes with H, are discussed. In the future, doping of ZnO nanocrystals will rely on an understanding of these fundamental properties.

  18. Al-doped ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Kadam, Pratibha; Agashe, Chitra; Mahamuni, Shailaja

    2008-11-01

    Al3+-doped ZnO nanocrystals were differently obtained by wet chemical and an electrochemical route. An increase in forbidden gap due to change in crystal size and also due to Al3+ doping in ZnO is critically analyzed. The Moss-Burstein type shift in Al3+-doped ZnO nanocrystals provides an evidence of successful Al3+ doping in ZnO nanocrystals. The possibility of varying the carrier concentration in ZnO nanocrystals is the indirect implication of the present investigations.

  19. A Comparison of ZnO and ZnO(-)

    NASA Technical Reports Server (NTRS)

    Bauschlicher, Charles W., Jr.; Partridge, Harry; Arnold, James (Technical Monitor)

    1998-01-01

    Ab initio electronic structure calculations are performed to support and to help interpret the experimental work reported in the proceeding manuscript. The CCSD(T) approach, in conjunction with a large basis set, is used to compute spectroscopic constants for the X(exp 1)Epsilon(+) and (3)II states of ZnO and the X(exp 2)Epsilon(+) state of ZnO(-). The spectroscopic constants, including the electron affinity, are in good agreement with experiment. The ZnO EA is significantly larger than that of O, thus relative to the atomic ground state asymptotes, ZnO(-) has a larger D(sub o) than the (1)Epsilon(+) state, despite the fact that the extra electron goes into an antibonding orbital. The changes in spectroscopic constants can be understood in terms of the X(exp 1)Epsilon(+) formally dissociating to Zn (1)S + O (1)D while the (3)II and (2)Epsilon(+) states dissociate to Zn (1)S + O (3)P and Zn (1) and O(-) (2)P, respectively.

  20. Highly Conducting Gallium-Doped ZnO Thin Film as Transparent Schottky Contact for Organic- Semiconductor-Based Schottky Diodes

    NASA Astrophysics Data System (ADS)

    Singh, Budhi; Ghosh, Subhasis

    2015-08-01

    Highly conducting and transparent Ga-doped ZnO (GZO) thin films have been grown on transparent substrates at different growth temperatures with Ga content varying from 0.01% to 10%. All films showed pronounced c-axis orientation corresponding to hexagonal wurtzite structure. The minimum resistivity of 4.3 × 10-4 Ω cm was reproducibly obtained in GZO thin film doped with 2% Ga and grown at 600°C. We have further shown that highly conducting transparent GZO thin film can be used as a Schottky contact in copper phthalocyanine (CuPc)-based Schottky diodes. The capacitance-voltage characteristics of the Al/CuPc/Au and GZO/CuPc/Au Schottky diodes show similar built-in potential ( V bi) of 0.98 V, which is close to the difference in work function between Au (5.2 eV) and Al or GZO (4.2 eV), establishing that GZO behaves as a metal electrode with work function similar to Al. Similar values of acceptor concentration (˜1015 cm-3) in CuPc were obtained from the capacitance-voltage characteristics of the Al/CuPc/Au and GZO/CuPc/Au Schottky diodes. These observations indicate the absence of interface states at the metal/organic interface in CuPc-based Schottky diodes.

  1. Acceptors in ZnO

    SciTech Connect

    McCluskey, Matthew D. Corolewski, Caleb D.; Lv, Jinpeng; Tarun, Marianne C.; Teklemichael, Samuel T.; Walter, Eric D.; Norton, M. Grant; Harrison, Kale W.; Ha, Su

    2015-03-21

    Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence indicates these point defects have acceptor levels 3.2, 1.4, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO{sub 2} contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals is attributed to an acceptor, which may involve a Zn vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g{sub ⊥} = 2.0015 and g{sub //} = 2.0056, along with an isotropic center at g = 2.0035.

  2. Acceptors in ZnO

    SciTech Connect

    Mccluskey, Matthew D.; Corolewski, Caleb; Lv, Jinpeng; Tarun, Marianne C.; Teklemichael, Samuel T.; Walter, Eric D.; Norton, M. G.; Harrison, Kale W.; Ha, Su Y.

    2015-03-21

    Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence shows that these point defects have acceptor levels 3.2, 1.5, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO2 contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals has been attributed to an acceptor, which may involve a zinc vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g = 2.0033 and g = 2.0075, along with an isotropic center at g = 2.0053.

  3. Homoepitaxial ZnO Film Growth

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C-H; Lehoczky, S. L.; Harris, M. T.; Callahan, M. J.; McCarty, P.; George, M. A.; Rose, M. Franklin (Technical Monitor)

    2000-01-01

    ZnO films have high potential for many applications, such as surface acoustic wave filters, UV detectors, and light emitting devices due to its structural, electrical, and optical properties. High quality epitaxial films are required for these applications. The Al2O3 substrate is commonly used for ZnO heteroepitaxial growth. Recently, high quality ZnO single crystals are available for grow homoepitaxial films. Epitaxial ZnO films were grown on the two polar surfaces (O-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. As a comparison, films were also deposited on (0001) Al2O3 substrates. It was found that the two polar ZnO surfaces have different photoluminescence (PL) spectrum, surface structure and morphology, which strongly influence the epitaxial film growth. The morphology and structure of homoepitaxial films grown on the ZnO substrates were different from heteroepitaxial films grown on the Al2O3. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite surface. The measurements of PL, low-angle incident x-ray diffraction, and atomic force microscopy of ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth.

  4. Preparation of new morphological ZnO and Ce-doped ZnO

    SciTech Connect

    Chelouche, A.; Djouadi, D.; Aksas, A.

    2013-12-16

    ZnO micro-tori and cerium doped hexangulars ZnO have been prepared by the sol-gel method under methanol hypercritical conditions of temperature and pressure. X-ray diffraction (XRD) measurement has revealed the high crystalline quality and the nanometric size of the samples. Scanning electron microscopy (SEM) has shown that the ZnO powder has a torus-like shape while that of ZnO:Ce has a hexangular-like shape, either standing free or inserted into the cores of ZnO tori. Transmission electron microscopy (TEM) has revealed that the ZnO particles have sizes between 25 and 30 nm while Ce-doped ZnO grains have diameters ranging from 75 nm to 100 nm. Photoluminescence spectra at room temperature of the samples have revealed that the introduction of cerium in ZnO reduces the emission intensity lines, particularly the ZnO red and green ones.

  5. The impact of morphology upon the radiation hardness of ZnO layers.

    PubMed

    Burlacu, A; Ursaki, V V; Skuratov, V A; Lincot, D; Pauporte, T; Elbelghiti, H; Rusu, E V; Tiginyanu, I M

    2008-05-28

    It is shown that ZnO nanorods and nanodots grown by MOCVD exhibit enhanced radiation hardness against high energy heavy ion irradiation as compared to bulk layers. The decrease of the luminescence intensity induced by 130 MeV Xe(23+) irradiation at a dose of 1.5 × 10(14) cm(-2) in ZnO nanorods is nearly identical to that induced by a dose of 6 × 10(12) cm(-2) in bulk layers. The damage introduced by irradiation is shown to change the nature of electronic transitions responsible for luminescence. The change of excitonic luminescence to the luminescence related to the tailing of the density of states caused by potential fluctuations occurs at an irradiation dose around 1 × 10(14) cm(-2) and 5 × 10(12) cm(-2) in nanorods and bulk layers, respectively. More than one order of magnitude enhancement of radiation hardness of ZnO nanorods grown by MOCVD as compared to bulk layers is also confirmed by the analysis of the near-bandgap photoluminescence band broadening and the behavior of resonant Raman scattering lines. The resonant Raman scattering analysis demonstrates that ZnO nanostructures are more radiation-hard as compared to nanostructured GaN layers. High energy heavy ion irradiation followed by thermal annealing is shown to be a way for the improvement of the quality of ZnO nanorods grown by electrodeposition and chemical bath deposition. PMID:21730593

  6. Gold coated ZnO nanorod biosensor for glucose detection

    NASA Astrophysics Data System (ADS)

    Bhattacharya, Anuradha; Jain, Chhavi; Rao, V. Padmanapan; Banerjee, S.

    2012-06-01

    Gold coated ZnO nanorod based biosensor has been fabricated for its glucose detecting abilities and compared with that of ZnO nanorod based biosensor. SEM images of electrochemically grown ZnO nanorods show hexagonally grown ZnO nanorods on an ITO substrate. Electrochemical analysis show that gold coated ZnO based biosensors have higher sensitivity, lower limit of detection and a wider linear range for glucose detection. The results demonstrate that gold coated ZnO nanorod based biosensors are a promising material for biosensor applications over single component ZnO nanorod based biosensor.

  7. Heavy flavors

    SciTech Connect

    Cox, B.; Gilman, F.J.; Gottschalk, T.D.

    1986-11-01

    A range of issues pertaining to heavy flavors at the SSC is examined including heavy flavor production by gluon-gluon fusion and by shower evolution of gluon jets, flavor tagging, reconstruction of Higgs and W bosons, and the study of rare decays and CP violation in the B meson system. A specific detector for doing heavy flavor physics and tuned to this latter study at the SSC, the TASTER, is described. 36 refs., 10 figs.

  8. Stability studies of commercial ZnO engineered nanoparticles in domestic wastewater

    NASA Astrophysics Data System (ADS)

    Chaúque, E. F. C.; Zvimba, J. N.; Ngila, J. C.; Musee, N.

    Most wastewater treatment plants (WWTPs) employ activated sludge processes to treat wastewater. The bacteria found in these systems degrade organic matter but are very sensitive to toxic compounds such as heavy metals, among others. The impact of emerging contaminants, such as engineered nanoparticles (ENPs) on the treatment efficiency of WWTPs is yet to be fully elucidated. The effects of physicochemical parameters; the pH and ionic strength on ZnO ENPs in domestic wastewater were investigated to establish their fate and behavior in wastewater treatment systems, as well as potential release into the environment if they pass untreated. Our findings showed a decrease in zinc concentration in the filtrate as pH and ionic strength increased which indicated its possible removal through the abiotic, biosorption, and biosolid settling mechanisms. This phenomenon was further confirmed by transmission electron microscopy (TEM) images which showed agglomerates of ZnO ENPs in wastewater compared with de-ionized water. The dynamic light scattering (DLS) analysis of ZnO ENPs suspension in the wastewater showed their stability over a period of 2 h, with energy dispersive X-ray (EDS) analysis showing the presence of zinc on the sludge surface, while X-ray diffraction (XRD) analysis confirmed the presence of ZnO ENPs in the sludge over typical wastewater pH ranges. The results of this study will inform the integrated water management on the impact of nanotechnology based industries and the best approach in handling wastewater treatment products.

  9. The nitridation of ZnO nanowires

    PubMed Central

    2012-01-01

    ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. These exhibited clear peaks in the X-ray diffraction corresponding to the hexagonal wurtzite crystal structure of ZnO and a photoluminescence spectrum with a peak at 3.3 eV corresponding to band edge emission close to 3.2 eV determined from the abrupt onset in the absorption-transmission through ZnO NWs grown on 0.5 nm Au/quartz. We find that the post growth nitridation of ZnO NWs under a steady flow of NH3 at temperatures ≤600°C promotes the formation of a ZnO/Zn3N2 core-shell structure as suggested by the suppression of the peaks related to ZnO and the emergence of new ones corresponding to the cubic crystal structure of Zn3N2 while maintaining their integrity. Higher temperatures lead to the complete elimination of the ZnO NWs. We discuss the effect of nitridation time, flow of NH3, ramp rate and hydrogen on the conversion and propose a mechanism for the nitridation. PMID:22397754

  10. Fabrication of ZnO nanoparticles by laser ablation of sintered ZnO in aqueous solution

    NASA Astrophysics Data System (ADS)

    Kawabata, Keisuke; Nanai, Yasushi; Kimura, Seiji; Okuno, Tsuyoshi

    2012-04-01

    Fabrication of ZnO nanoparticles by laser ablation in liquid medium is reported. The possibility of using a sintered ZnO target for the ablation as well as a Zn plate is demonstrated. The appropriate aqueous solution of sodium dodecyl sulfate is found to be 1 mM for ZnO growing. The shape of ZnO nanoparticles is sphere and its diameter is 30˜60 nm. Fourier transform infrared spectra, Raman scattering spectra, and photoluminescence spectra reveal the optical properties of ZnO nanoparticles. Nanoparticles obtained by using ZnO targets show a smaller defect density compared with those by using Zn targets.

  11. Growth of vertically aligned ZnO nanorods using textured ZnO films

    PubMed Central

    2011-01-01

    A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD) is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100) substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.) PMID:21899743

  12. Single ZnO nanocactus gas sensor formed by etching of ZnO nanorod

    NASA Astrophysics Data System (ADS)

    Ryong Ryu, Sung; Ram, S. D. Gopal; Cho, Hak-Dong; Lee, Dong Jin; Won Kang, Tae; Woo, Yongdeuk

    2015-06-01

    Etching of materials on the nanoscale is a challenging but necessary process in nanomaterials science. Gas sensing using a single ZnO nanocactus (NC), which was prepared by facile isotropic nanoetching of zinc oxide nanorods (NR) grown by chemical vapor deposition (CVD) using an organic photoresist (PR) by a thermochemical reaction, is reported in this work. PR consists of carboxylic acid groups (COOH) and cyclopentanone (C5H8O), which can react with zinc and oxygen atoms, respectively, on the surface of a ZnO NR. The thermochemical reaction is controllable by varying the concentration of PR and reaction time. A gas sensor was fabricated using a single NC. Gas sensing was tested using different gases such as CH4, NH3 and carbon monoxide (CO). It was estimated that the surface area of a ZnO NC in the case of 50% PR was found to increase four-fold. When compared with a single ZnO NR gas sensor, the sensitivity of a ZnO NC was found to increase four-fold. This increase in sensitivity is attributed to the increase in surface area of the ZnO NC. The formed single ZnO NC gas sensor has good stability, response and recovery time.Etching of materials on the nanoscale is a challenging but necessary process in nanomaterials science. Gas sensing using a single ZnO nanocactus (NC), which was prepared by facile isotropic nanoetching of zinc oxide nanorods (NR) grown by chemical vapor deposition (CVD) using an organic photoresist (PR) by a thermochemical reaction, is reported in this work. PR consists of carboxylic acid groups (COOH) and cyclopentanone (C5H8O), which can react with zinc and oxygen atoms, respectively, on the surface of a ZnO NR. The thermochemical reaction is controllable by varying the concentration of PR and reaction time. A gas sensor was fabricated using a single NC. Gas sensing was tested using different gases such as CH4, NH3 and carbon monoxide (CO). It was estimated that the surface area of a ZnO NC in the case of 50% PR was found to increase four

  13. Synthesis and antibacterial properties of ZnO brush pens

    NASA Astrophysics Data System (ADS)

    Wang, Dan; Zhang, Rong; Li, Yilin; Weng, Yuan; Liang, Weiquan; Zhang, Wenfeng; Zheng, Weitao; Hu, Haimei

    2015-12-01

    In this paper, ZnO with a novel hierarchical nanostructure has been synthesized by a new solution method. The novel hierarchical structure is named a ‘brush pen’. The biocompatibility and antibacterial properties of ZnO brush pens have been evaluated. The results demonstrate that ZnO brush pens show good antibacterial activity against Staphylococcus aureus.

  14. ZnO nanolasers on graphene films

    NASA Astrophysics Data System (ADS)

    Baek, Hyeonjun; Park, Jun Beom; Park, Jong-woo; Hyun, Jerome K.; Yoon, Hosang; Oh, Hongseok; Yoon, Jiyoung

    2016-06-01

    We grew and characterized zinc oxide (ZnO) nanolasers on graphene films. By using graphene as a growth medium, we were able to prepare position-controlled and vertically aligned ZnO nanotube lasers. The ZnO nanolasers grown on graphene films showed good optical characteristics, evidenced by a low lasing threshold. Furthermore, the nanolaser/graphene system was easily lifted off the original substrate and transferred onto foreign substrates. The lasing performance was observed to be significantly enhanced by depositing a layer of silver on the back of the graphene film during this transfer process, which was quantitatively investigated using finite-difference time-domain simulations. Due to the wide selection of substrates enabled by the use of graphene films, our results suggest promising strategies for preparing practical nanolasers with improved performance.

  15. Dye-Sensitization Of Nanocrystalline ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Ajimsha, R. S.; Tyagi, M.; Das, A. K.; Misra, P.; Kukreja, L. M.

    2010-12-01

    Nannocrystalline and nanoporus thin films of ZnO were synthesized on glass substrates by using wet chemical drop casting method. X-ray diffraction measurements on these samples confirmed the formation of ZnO nanocrystallites in hexagonal wurtzite phase with mean size of ˜20 nm. Photo sensitization of these nanostructured ZnO thin films was carried out using three types of dyes Rhodamine 6 G, Chlorophyll and cocktail of Rhodamine 6 G and Chlorophyll in 1:1 ratio. Dye sensitized ZnO thin films showed enhanced optical absorption in visible spectral region compared to the pristine ZnO thin films.

  16. Dye-Sensitization Of Nanocrystalline ZnO Thin Films

    SciTech Connect

    Ajimsha, R. S.; Tyagi, M.; Das, A. K.; Misra, P.; Kukreja, L. M.

    2010-12-01

    Nannocrystalline and nanoporus thin films of ZnO were synthesized on glass substrates by using wet chemical drop casting method. X-ray diffraction measurements on these samples confirmed the formation of ZnO nanocrystallites in hexagonal wurtzite phase with mean size of {approx}20 nm. Photo sensitization of these nanostructured ZnO thin films was carried out using three types of dyes Rhodamine 6 G, Chlorophyll and cocktail of Rhodamine 6 G and Chlorophyll in 1:1 ratio. Dye sensitized ZnO thin films showed enhanced optical absorption in visible spectral region compared to the pristine ZnO thin films.

  17. NEXAFS and XMCD studies of single-phase Co doped ZnO thin films.

    PubMed

    Singh, Abhinav Pratap; Kumar, Ravi; Thakur, P; Brookes, N B; Chae, K H; Choi, W K

    2009-05-01

    A study of the electronic structure and magnetic properties of Co doped ZnO thin films synthesized by ion implantation followed by swift heavy ion irradiation is presented using near-edge x-ray absorption fine structure (NEXAFS) and x-ray magnetic circular dichroism (XMCD) measurements. The spectral features of NEXAFS at the Co L(3,2)-edge show entirely different features than that of metallic Co clusters and other Co oxide phases. The atomic multiplet calculations are performed to determine the valence state, symmetry and the crystal field splitting, which show that in the present system Co is in the 2+ state and substituted at the Zn site in tetrahedral symmetry with 10Dq = -0.6 eV. The ferromagnetic character of these materials is confirmed through XMCD spectra. To rule out the possibilities of defect induced magnetism, the results are compared with Ar annealed and Ar-ion implanted pure ZnO thin films. The presented results confirm the substitution of Co at the Zn site in the ZnO matrix, which is responsible for room temperature ferromagnetism. PMID:21825451

  18. Controlled doping of graphene using ZnO substrates

    NASA Astrophysics Data System (ADS)

    Si, Misuk; Choi, Won Jin; Jeong, Yoon Jang; Lee, Young Kuk; Kim, Ju-Jin; Lee, Jeong-O.

    2016-06-01

    We show that graphene device could be controllably doped by the bottom substrate by inserting atomic layer deposition grown ZnO between graphene and SiO2 substrate. To clarify the effect of bottom ZnO, length of the graphene transistor channel was varied from 20 to 200 μm, while that of ZnO was fixed to 10 μm. Graphene devices supported on ZnO film show marked difference from those supported on SiO2 substrates; bottom ZnO layer behave as an electron donor. UV illumination experiment on hybrid graphene-ZnO device reveals that the effect of doping from ZnO becomes negligible when the graphene channel length made about four times larger than that of ZnO stripe.

  19. Characterization of reaction between ZnO and COS

    SciTech Connect

    Sasaoka, Eiji; Taniguchi, Kazuo; Uddin, M.A.; Hirano, Shigeru; Kasaoka, Shigeaki; Sakata, Yusaku

    1996-07-01

    In order to understand the behavior of COS in a ZnO desulfurization reactor, the reaction between ZnO and COS was studied in the presence of gases which compose a coal-derived gas. The behavior of COS in the reaction zone of a ZnO packed bed can be predicted as follows: H{sub 2}S in coal-derived gas reacts more easily with ZnO than COS; most of COS is converted to H{sub 2}S by catalytic hydrolysis and then reacts with ZnO, although a part of COS may react directly with ZnO; H{sub 2} accelerates the conversion of COS to H{sub 2}S; the water-gas shift reaction accelerates the reaction between ZnO and COS; and CO{sub 2} does not affect the reaction.

  20. Heavy loads

    SciTech Connect

    Metz, D.

    1982-01-01

    The extreme pressures on the roof and walls of an earth-sheltered residential home are discussed and the need for careful planning is stressed. Pertinent terms are defined. Footings and wall structure (reinforced concrete walls and concrete block walls) are described. Roofing systems are discussed in detail and illustrated: (1) poured-in-place concrete roof slabs; (2) pre-cast concrete planks; and (3) heavy timber roofs. Insulation of earth-sheltered homes is reviewed in terms of using: (1) urethanes; (2) extruded polystyrene; and (3) expanded polystyrene. Advantages, disadvantages, R-factors, costs, and installation are discussed. (MJJ)

  1. Growth of a Novel Nanostructured ZnO Urchin: Control of Cytotoxicity and Dissolution of the ZnO Urchin.

    PubMed

    Imani, Roghayeh; Drašler, Barbara; Kononenko, Veno; Romih, Tea; Eleršič, Kristina; Jelenc, Janez; Junkar, Ita; Remškar, Maja; Drobne, Damjana; Kralj-Iglič, Veronika; Iglič, Aleš

    2015-12-01

    The applications of zinc oxide (ZnO) nanowires (NWs) in implantable wireless devices, such as diagnostic nanobiosensors and nanobiogenerators, have recently attracted enormous attention due to their unique properties. However, for these implantable nanodevices, the biocompatibility and the ability to control the behaviour of cells in contact with ZnO NWs are demanded for the success of these implantable devices, but to date, only a few contrasting results from their biocompatibility can be found. There is a need for more research about the biocompatibility of ZnO nanostructures and the adhesion and viability of cells on the surface of ZnO nanostructures. Here, we introduce synthesis of a new nature-inspired nanostructured ZnO urchin, with the dimensions of the ZnO urchin's acicula being controllable. To examine the biocompatibility and behaviour of cells in contact with the ZnO urchin, the Madin-Darby canine kidney (MDCK) epithelial cell line was chosen as an in vitro experimental model. The results of the viability assay indicated that, compared to control, the number of viable cells attached to the surface of the ZnO urchin and its surrounding area were reduced. The measurements of the Zn contents of cell media confirmed ZnO dissolution, which suggests that the ZnO dissolution in cell culture medium could lead to cytotoxicity. A purposeful reduction of ZnO cytotoxicity was achieved by surface coating of the ZnO urchin with poly(vinylidene fluorid-co-hexafluoropropylene) (PVDF-HFP), which changed the material matrix to slow the Zn ion release and consequently reduce the cytotoxicity of the ZnO urchin without reducing its functionality. PMID:26573932

  2. ZnO quantum dots-decorated ZnO nanowires for the enhancement of antibacterial and photocatalytic performances

    NASA Astrophysics Data System (ADS)

    Wu, Jyh Ming; Tsay, Li-Yi

    2015-10-01

    We demonstrate highly antibacterial activities for killing off Staphylococcus aureus and Escherichia coli using ZnO nanowires decorated with ZnO quantum dots (so-called ZnO QDs/NWs) under visible-light irradiation and dark conditions. The average size of the ZnO QDs is in the range of 3-5 nm; these were uniformly dispersed on the ZnO nanowires’ surface to form the ZnO QDs/NWs. A significant blue-shift effect was observed using photoluminescence (PL) spectra. The size of the ZnO QDs is strongly dependent on the material’s synthesis time. The ZnO QDs/NWs exhibited an excellent photocatalytic activity under visible-light irradiation. The ZnO QDs’ active sites (i.e. the O-H bond and Zn2+) accelerate the photogenerated-carrier migration from the QDs to the NWs. As a consequence, the electrons reacted with the dissolved oxygen to form oxygen ions and produced hydroperoxyl radicals to enhance photocatalytic activity. The antibacterial activities (as indicated by R-factor-inhibiting activity) of the ZnO QDs/NWs for killing off Staphylococcus aureus and Escherichia coli is around 4.9 and 5.5 under visible-light irradiation and dark conditions, respectively. The hydroxyl radicals served as an efficient oxidized agent for decomposing the organic dye and microorganism species. The antibacterial activities of the ZnO QDs/NWs in the dark may be attributed to the Zn2+ ions that were released from the ZnO QDs and infused into the microbial solution against the growth of bacteria thus disrupting the microorganism. The highly antibacterial and photocatalytic activity of the ZnO QDs/NWs can be well implanted on a screen window, thus offering a promising solution to inhibit the spread of germs under visible-light and dark conditions.

  3. Growth of a Novel Nanostructured ZnO Urchin: Control of Cytotoxicity and Dissolution of the ZnO Urchin

    NASA Astrophysics Data System (ADS)

    Imani, Roghayeh; Drašler, Barbara; Kononenko, Veno; Romih, Tea; Eleršič, Kristina; Jelenc, Janez; Junkar, Ita; Remškar, Maja; Drobne, Damjana; Kralj-Iglič, Veronika; Iglič, Aleš

    2015-11-01

    The applications of zinc oxide (ZnO) nanowires (NWs) in implantable wireless devices, such as diagnostic nanobiosensors and nanobiogenerators, have recently attracted enormous attention due to their unique properties. However, for these implantable nanodevices, the biocompatibility and the ability to control the behaviour of cells in contact with ZnO NWs are demanded for the success of these implantable devices, but to date, only a few contrasting results from their biocompatibility can be found. There is a need for more research about the biocompatibility of ZnO nanostructures and the adhesion and viability of cells on the surface of ZnO nanostructures. Here, we introduce synthesis of a new nature-inspired nanostructured ZnO urchin, with the dimensions of the ZnO urchin's acicula being controllable. To examine the biocompatibility and behaviour of cells in contact with the ZnO urchin, the Madin-Darby canine kidney (MDCK) epithelial cell line was chosen as an in vitro experimental model. The results of the viability assay indicated that, compared to control, the number of viable cells attached to the surface of the ZnO urchin and its surrounding area were reduced. The measurements of the Zn contents of cell media confirmed ZnO dissolution, which suggests that the ZnO dissolution in cell culture medium could lead to cytotoxicity. A purposeful reduction of ZnO cytotoxicity was achieved by surface coating of the ZnO urchin with poly(vinylidene fluorid-co-hexafluoropropylene) (PVDF-HFP), which changed the material matrix to slow the Zn ion release and consequently reduce the cytotoxicity of the ZnO urchin without reducing its functionality.

  4. Growth of vertically aligned one-dimensional ZnO nanowire arrays on sol-gel derived ZnO thin films

    NASA Astrophysics Data System (ADS)

    Kitazawa, Nobuaki; Aono, Masami; Watanabe, Yoshihisa

    2014-11-01

    Vertically aligned one-dimensional ZnO nanowire arrays have been synthesized by a hydrothermal method on sol-gel derived ZnO films. Sol-gel derived ZnO films and corresponding ZnO nanowire arrays have been characterized by X-ray diffraction and field-emission scanning electron microscopy. The effect of sol-gel derived ZnO film surface on the morphology of ZnO nanowire arrays has been investigated. The authors suggest from our investigation that sol-gel derived ZnO films affect the growth of one-dimensional ZnO nanostructures. Not only crystalline ZnO films but also amorphous ones can act as a scaffold for ZnO nucleus. Tilted ZnO micro-rods are grown on ZnO gel films, whereas vertically aligned ZnO nanowire arrays are grown on nanometer-sized ZnO grains. The average diameter of ZnO nanowire arrays are correlated strongly with the grain size of sol-gel derived ZnO films.

  5. Synthesis and characterization of ZnO thin films

    NASA Astrophysics Data System (ADS)

    Anilkumar T., S.; Girija M., L.; Venkatesh, J.

    2016-05-01

    Zinc oxide (ZnO) Thin films were deposited on glass substrate using Spin coating method. Zinc acetate dehydrate, Carbinol and Mono-ethanolamine were used as the precursor, solvent and stabilizer respectively to prepare ZnO Thin-films. The molar ratio of Monoethanolamine to Zinc acetate was maintained as approximately 1. The thickness of the films was determined by Interference technique. The optical properties of the films were studied by UV Vis-Spectrophotometer. From transmittance and absorbance curve, the energy band gap of ZnO is found out. Electrical Conductivity measurements of ZnO are carried out by two probe method and Activation energy for the electrical conductivity of ZnO are found out. The crystal structure and orientation of the films were analyzed by XRD. The XRD patterns show that the ZnO films are polycrystalline with wurtzite hexagonal structure.

  6. Physical vapor transport crystal growth of ZnO

    NASA Astrophysics Data System (ADS)

    Yang, Liu; Jianping, Ma; Fuli, Liu; Yuan, Zang; Yantao, Liu

    2014-03-01

    Zinc oxide (ZnO) has a wide band gap, high stability and a high thermal operating range that makes it a suitable material as a semiconductor for fabricating light emitting diodes (LEDs) and laser diodes, photodiodes, power diodes and other semiconductor devices. Recently, a new crystal growth for producing ZnO crystal boules was developed, which was physical vapor transport (PVT), at temperatures exceeding 1500 °C under a certain system pressure. ZnO crystal wafers in sizes up to 50 mm in diameter were produced. The conditions of ZnO crystal growth, growth rate and the quality of ZnO crystal were analyzed. Results from crystal growth and material characterization are presented and discussed. Our research results suggest that the novel crystal growth technique is a viable production technique for producing ZnO crystals and substrates for semiconductor device applications.

  7. Homoepitaxial regrowth habits of ZnO nanowire arrays

    PubMed Central

    2011-01-01

    Synthetic regrowth of ZnO nanowires [NWs] under a similar chemical vapor transport and condensation [CVTC] process can produce abundant ZnO nanostructures which are not possible by a single CVTC step. In this work, we report three different regrowth modes of ZnO NWs: axial growth, radial growth, and both directions. The different growth modes seem to be determined by the properties of initial ZnO NW templates. By varying the growth parameters in the first-step CVTC process, ZnO nanostructures (e.g., nanoantenna) with drastically different morphologies can be obtained with distinct photoluminescence properties. The results have implications in guiding the rational synthesis of various ZnO NW heterostructures. PMID:22151820

  8. Photophysics and photochemistry of quantized ZnO colloids

    SciTech Connect

    Kamat, P.V.; Patrick, B.

    1992-08-06

    The photophysical and photochemical behavior of quantized ZnO colloids in ethanol has been investigated by time-resolved transient absorption and emission measurements. Trapping of electrons at the ZnO surface resulted in broad absorption in the red region. The green emission of ZnO colloids was readily quenched by hole scavengers such as SCN{sup -} and I{sup -}. The photoinduced charge transfer to these hole scavengers was studied by laser flash photolysis. The yield of oxidized product increased considerably when ZnO colloids were coupled with ZnSe. 36 refs., 11 figs., 1 tab.

  9. Substrate Preparations in Epitaxial ZnO Film Growth

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.; Harris, M. T.; Callahan, M. J.; George, M. A.

    2000-01-01

    Epitaxial ZnO films were grown on the two polar surfaces (O-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. Annealing-temperature dependence of ZnO substrates was studied. ZnO films grown on sapphire substrates have also been investigated for comparison purposes and the annealing temperature of A1203 substrates is 1000 C. Substrates and films were characterized using photoluminescence (PL) spectrum, x-ray diffraction, atomic force microscope, energy dispersive spectrum, and electric transport measurements. It has been found that the ZnO film properties were different when films were grown on the two polarity surfaces of ZnO substrates and the A1203 substrates. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite surface. The measurements of homoepitaxial ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth.

  10. Buffer layer effect on ZnO nanorods growth alignment

    NASA Astrophysics Data System (ADS)

    Zhao, Dongxu; Andreazza, Caroline; Andreazza, Pascal; Ma, Jiangang; Liu, Yichun; Shen, Dezhen

    2005-06-01

    Vertical aligned ZnO nanorods array was fabricated on Si with introducing a ZnO thin film as a buffer layer. Two different nucleation mechanisms were found in growth process. With using Au catalyst, Zn vapor could diffuse into Au nanoclusters with forming a solid solution. Then the ZnO nucleation site is mainly on the catalyst by oxidation of Au/Zn alloy. Without catalyst, nucleation could occur directly on the surface of buffer layer by homoepitaxy. The density and the size of ZnO nanorods could be governed by morphological character of catalyst and buffer layer. The nanorods growth is followed by vapor-solid mechanism.

  11. Sodium doping in ZnO crystals

    SciTech Connect

    Parmar, N. S. Lynn, K. G.

    2015-01-12

    ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10{sup 17 }cm{sup −3}. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na{sub Zn} level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature.

  12. Preparation, structural and optical characterization of ZnO, ZnO: Al nanopowder

    SciTech Connect

    Mohan, R. Raj; Rajendran, K.; Sambath, K.

    2014-01-28

    In this paper, ZnO and ZnO:Al nanopowders have been synthesized by low cost hydrothermal method. Zinc nitrate, hexamethylenetetramine (HMT) and aluminium nitrate are used as precursors for ZnO and AZO with different molar ratios. The structural and optical characterization of doped and un-doped ZnO powders have been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDAX), photoluminescence (PL) and ultra violet visible (UV-Vis) absorption studies. The SEM results show that the hydrothermal synthesis can be used to obtain nanoparticles with different morphology. It is observed that the grain size of the AZO nanoparticles increased with increasing of Al concentration. The PL measurement of AZO shows that broad range of green emission around 550nm with high intensity. The green emission resulted mainly because of intrinsic defects.

  13. Spin noise spectroscopy of ZnO

    SciTech Connect

    Horn, H.; Berski, F.; Hübner, J.; Oestreich, M.; Balocchi, A.; Marie, X.; Mansur-Al-Suleiman, M.; Bakin, A.; Waag, A.

    2013-12-04

    We investigate the thermal equilibrium dynamics of electron spins bound to donors in nanoporous ZnO by optical spin noise spectroscopy. The spin noise spectra reveal two noise contributions: A weak spin noise signal from undisturbed localized donor electrons with a dephasing time of 24 ns due to hyperfine interaction and a strong spin noise signal with a spin dephasing time of 5 ns which we attribute to localized donor electrons which interact with lattice defects.

  14. Synthesis, characterization and photocatalytic activity of PVP stabilized ZnO and modified ZnO nanostructures

    NASA Astrophysics Data System (ADS)

    Bandekar, Gauri; Rajurkar, N. S.; Mulla, I. S.; Mulik, U. P.; Amalnerkar, D. P.; Adhyapak, P. V.

    2013-01-01

    In the present study, ZnO nanostructures have been successfully synthesized by hydrothermal, sonochemical and precipitation methods using polyvinyl pyrrolidone (PVP) as the capping agent. The ZnO nanoparticles were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV-Visible spectroscopy and photoluminescence (PL) techniques. The XRD results revealed the hexagonal wurtzite structure of the ZnO nanostructures for all the samples. Furthermore, the morphology of the ZnO particles was obtained from FESEM micrographs. Particles prepared by hydrothermal method were found to be rice grain shaped and that prepared by precipitation and sonochemical methods were spherical shaped. Sunlight driven photocatalytic degradation of methylene blue (MB) was studied for ZnO nanostructures synthesized by various methods. The ZnO nanostructures were further decorated with Ag nanoparticles to enhance its dye degradation efficiency. The Ag decorated ZnO nanoparticles exhibited a higher degradation rate as compared to pure ZnO nanoparticles which was independent of pH. Since this process of dye degradation relies on the degradation of dye due to oxidation by highly reactive hydroxyl radicals, there are many factors which affect the efficiency of this process. Hence a study was conducted on the effect of various parameters on ZnO viz amount of catalyst, reaction pH and concentration of MB dye.

  15. Role of ZnO thin film in the vertically aligned growth of ZnO nanorods by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Son, Nguyen Thanh; Noh, Jin-Seo; Park, Sungho

    2016-08-01

    The effect of ZnO thin film on the growth of ZnO nanorods was investigated. ZnO thin films were sputter-deposited on Si substrate with varying the thickness. ZnO nanorods were grown on the thin film using a chemical bath deposition (CBD) method at 90 °C. The ZnO thin films showed granular structure and vertical roughness on the surface, which facilitated the vertical growth of ZnO nanorods. The average grain size and the surface roughness of ZnO film increased with an increase in film thickness, and this led to the increase in both the average diameter and the average length of vertically grown ZnO nanorods. In particular, it was found that the average diameter of ZnO nanorods was very close to the average grain size of ZnO thin film, confirming the role of ZnO film as a seed layer for the vertical growth of ZnO nanorods. The CBD growth on ZnO seed layers may provide a facile route to engineering vertically aligned ZnO nanorod arrays.

  16. Fast synthesize ZnO quantum dots via ultrasonic method.

    PubMed

    Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-05-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. PMID:26611814

  17. Ultrasonic synthesis of fern-like ZnO nanoleaves and their enhanced photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Ma, Qing Lan; Xiong, Rui; Zhai, Bao-gai; Huang, Yuan Ming

    2015-01-01

    Two-dimensional fern-like ZnO nanoleaves were synthesized by ultrasonicating zinc microcrystals in water. The morphology, crystal structure, optical property and photocatalytic activity of the fern-like ZnO nanoleaves were characterized with scanning electron microscopy, X-ray diffraction, transmission electron microscopy, photoluminescence spectroscopy and ultraviolet-visible spectroscopy, respectively. It is found that one fern-like ZnO nanoleaf is composed of one ZnO nanorod as the central trunk and a number of ZnO nanoplates as the side branches in opposite pairs along the central ZnO nanorod. The central ZnO nanorod in the fern-like nanoleaves is about 1 μm long while the side-branching ZnO nanoplates are about 100 nm long and 20 nm wide. Further analysis has revealed that ZnO nanocrystals are the building blocks of the central ZnO nanorod and the side-branching ZnO nanoplates. Under identical conditions, fern-like ZnO nanoleaves exhibit higher photocatalytic activity in photodegrading methyl orange in aqueous solution than spherical ZnO nanocrystals. The first-order photocatalytic rate constant of the fern-like ZnO nanoleaves is about four times as large as that of the ZnO nanoparticles. The branched architecture of the hierarchical nanoleaves is suggested be responsible for the enhanced photocatalytic activity of the fern-like ZnO nanoleaves.

  18. Fabrication of a ZnO Pyroelectric Sensor

    PubMed Central

    Hsiao, Chun-Ching; Huang, Kuo-Yi; Hu, Yuh-Chung

    2008-01-01

    This paper proposes a two-step radio frequency (RF) sputtering process to form a ZnO film for pyroelectric sensors. It is shown that the two-step sputtering process with a lower power step followed by a higher power step can significantly improve the voltage responsivity of the ZnO pyroelectric sensor. The improvement is attributed mainly to the formation of ZnO film with a strongly preferred orientation towards the c-axis. Furthermore, a nickel film deposited onto the uncovered parts of the ZnO film can effectively improve the voltage responsivity at higher modulating frequencies since the nickel film can enhance the incident energy absorption of the ZnO layer.

  19. A Novel Way for Synthesizing Phosphorus-Doped Zno Nanowires

    PubMed Central

    2011-01-01

    We developed a novel approach to synthesize phosphorus (P)-doped ZnO nanowires by directly decomposing zinc phosphate powder. The samples were demonstrated to be P-doped ZnO nanowires by using scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction spectra, X-ray photoelectron spectroscopy, energy dispersive spectrum, Raman spectra and photoluminescence measurements. The chemical state of P was investigated by electron energy loss spectroscopy (EELS) analyses in individual ZnO nanowires. P was found to substitute at oxygen sites (PO), with the presence of anti-site P on Zn sites (PZn). P-doped ZnO nanowires were high resistance and the related P-doping mechanism was discussed by combining EELS results with electrical measurements, structure characterization and photoluminescence measurements. Our method provides an efficient way of synthesizing P-doped ZnO nanowires and the results help to understand the P-doping mechanism.

  20. Review of zincblende ZnO: Stability of metastable ZnO phases

    NASA Astrophysics Data System (ADS)

    Ashrafi, A.; Jagadish, C.

    2007-10-01

    Common II-VI compound semiconducting materials are stable thermodynamically with zincblende phase, while the II-O materials such as zinc oxide (ZnO) and beryllium oxide (BeO) are stable with wurtzite phase, and cadmium oxide (CdO) and magnesium oxide (MgO) are stable in rocksalt phase. This phase disharmony in the same material family laid a challenge for the basic physics and in practical applications in optoelectronic devices, where ternary and quaternary compounds are employed. Thermodynamically the zincblende ZnO is a metastable phase which is free from the giant internal electric fields in the [001] directions and has an easy cleavage facet in the ⟨110⟩ directions for laser cavity fabrication that combined with evidence for the higher optical gain. The zincblende materials also have lower ionicity that leads to the lower carrier scattering and higher doping efficiencies. Even with these outstanding features in the zincblende materials, the growth of zincblende ZnO and its fundamental properties are still limited. In this paper, recent progress in growth and fundamental properties of zincblende ZnO material has been reviewed.

  1. Synthesis and spectroscopic characterization of water-soluble Mn-doped ZnO xS 1- x quantum dots

    NASA Astrophysics Data System (ADS)

    Xue, Fangfang; Liang, Jiangong; Han, Heyou

    2011-12-01

    A non-cadmium and water-soluble Mn-doped ZnO xS 1- x QDs was synthesized with denatured bovine serum albumin (dBSA) as stabilizer under nitrogen atmosphere, and the as-prepared products were characterized by X-ray powder diffraction (XRD), UV-vis absorption spectroscopy, fluorescence (FL) emission spectroscopy, high resolution transmission electronmicroscopy (HRTEM) and Raman spectrum. XRD patterns indicate that the Mn-doped ZnO xS 1- x QDs have a zinc-blende structure, and that manganese emerges in the form of divalent manganese (Mn 2+) and trivalent manganese (Mn 3+) (the intermediate of the reaction). The size of Mn-doped ZnO xS 1- x QDs is about 3.2 ± 0.7 nm according to HRTEM imaging. The FL spectra reveal that the Mn-doped ZnO xS 1- x QDs have two distinct emission bands: the defect-related emission and the Mn 2+-related emission, which exhibit a competing process. A good FL signal of the transition of Mn 2+ ( 4T 1- 6A 1) is observed when the doping amounts are 1.0% and 20% respectively, and the as-prepared solutions are stable for more than 6 months at 4 °C. This method has the advantages of good stability and environment-friendly stabilizer, for involving no heavy metal ions or toxic reagents.

  2. Polarized Raman scattering of single ZnO nanorod

    SciTech Connect

    Yu, J. L. Lai, Y. F. Wang, Y. Z.; Cheng, S. Y.

    2014-01-21

    Polarized Raman scattering measurement on single wurtzite c-plane (001) ZnO nanorod grown by hydrothermal method has been performed at room temperature. The polarization dependence of the intensity of the Raman scattering for the phonon modes A{sub 1}(TO), E{sub 1}(TO), and E{sub 2}{sup high} in the ZnO nanorod are obtained. The deviations of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules are observed, which can be attributed to the structure defects in the ZnO nanorod as confirmed by the comparison of the transmission electron microscopy, photoluminescence spectra as well as the polarization dependent Raman signal of the annealed and unannealed ZnO nanorod. The Raman tensor elements of A{sub 1}(TO) and E{sub 1}(TO) phonon modes normalized to that of the E{sub 2}{sup high} phonon mode are |a/d|=0.32±0.01, |b/d|=0.49±0.02, and |c/d|=0.23±0.01 for the unannealed ZnO nanorod, and |a/d|=0.33±0.01, |b/d|=0.45±0.01, and |c/d|=0.20±0.01 for the annealed ZnO nanorod, which shows strong anisotropy compared to that of bulk ZnO epilayer.

  3. Synthesis and characterization of ZnO tetrapods

    NASA Astrophysics Data System (ADS)

    Zahran, H. Y.; Yahia, I. S.

    2015-06-01

    ZnO was prepared by direct combustion method of pure zinc metal at 1000 °C for 30 min. After combustion, ZnO was formed as a fumed powder. The as-synthesized ZnO was characterized by means of different techniques such as: X-ray diffraction (XRD), scanning electron microscope (SEM), diffused reflectance and the electrical conductivity measurements. XRD showed that ZnO has a nanocrystalline hexagonal phase with lattice constants a = 3.24982 Å and c = 5.20661 Å as compared to JCDPS card. From the analysis of the diffused reflectance spectra, the optical band gap was calculated and equals 3.2 eV which is in the same range for commercial ZnO and the reported ZnO prepared by other techniques. SEM micrographs showed the nanotetrapods structure of ZnO with highly uniform distribution of tetrapods. The DC electrical conductivity measurement was carried out in the temperature range 293-473 K, and it was found to be increased with increasing temperature forming three different conduction mechanisms associated with three activation energies.

  4. Gold as an intruder in ZnO nanowires.

    PubMed

    Méndez-Reyes, José M; Monroy, B Marel; Bizarro, Monserrat; Güell, Frank; Martínez, Ana; Ramos, Estrella

    2015-09-01

    Several techniques for obtaining ZnO nanowires (ZnO NWs) have been reported in the literature. In particular, vapour-liquid-solid (VLS) with Au as a catalyst is widely used. During this process, Au impurities in the ZnO NWs can be incorporated accidentally, and for this reason we named these impurities as intruders. It is thought that these intruders may produce interesting alterations in the electronic characteristics of nanowires. In the experiment, it is not easy to detect either Au atoms in these nanowires, or the modification that intruders produce in different electrical, optical and other properties. For this reason, in this density functional theory investigation, the effect of Au intruders on ZnO NWs is analysed. Au extended (thread) and point defects (atoms replacing Zn or O, or Au interstitials) are used to simulate the presence of gold atoms. Optimised geometries, band-gaps and density of states indicate that the presence of small amounts of Au drastically modifies the electronic states of ZnO NWs. The results reported here clearly indicate that small amounts of Au have a strong impact on the electronic properties of ZnO NWs, introducing states in the band edges that may promote transitions in the visible spectral region. The presence of Au as an intruder in ZnO NWs enhances the potential use of this system for photonic and photovoltaic applications. PMID:26219752

  5. Superhydrophobic ZnO networks with high water adhesion

    PubMed Central

    2014-01-01

    ZnO structures were deposited using a simple chemical bath deposition technique onto interdigitated electrodes fabricated by a conventional photolithography method on SiO2/Si substrates. The X-ray diffraction studies show that the ZnO samples have a hexagonal wurtzite crystalline structure. The scanning electron microscopy observations prove that the substrates are uniformly covered by ZnO networks formed by monodisperse rods. The ZnO rod average diameter and length were tuned by controlling reactants' concentration and reaction time. Optical spectroscopy measurements demonstrate that all the samples display bandgap values and emission bands typical for ZnO. The electrical measurements reveal percolating networks which are highly sensitive when the samples are exposed to ammonia vapors, a variation in their resistance with the exposure time being evidenced. Other important characteristics are that the ZnO rod networks exhibit superhydrophobicity, with water contact angles exceeding 150° and a high water droplet adhesion. Reproducible, easily scalable, and low-cost chemical bath deposition and photolithography techniques could provide a facile approach to fabricate such ZnO networks and devices based on them for a wide range of applications where multifunctionality, i.e., sensing and superhydrophobicity, properties are required. PACS 81.07.-b; 81.05.Dz; 68.08.Bc PMID:25136286

  6. Growth of Homoepitaxial ZnO Semiconducting Films

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, S. L.; Harris, M. T.; George, Michael A.; McCarty, P.

    1999-01-01

    As a high temperature semiconductor, ZnO has been used for many applications such as wave-guide, solar cells, and surface acoustic wave devices. Since the ZnO material has an energy gap of 3.3 eV at room temperature and an excitonic binding energy (60 meV) that is possible to make excitonic lasering at room temperature a recent surge of interest is to synthesize ZnO films for electro-optical devices. These applications require films with a smooth surface, good crystal quality, and low defect density. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystals are grown by the hydrothermal method. Substrates are mechanically polished and annealed in air for four hours before deposited films. The annealing temperature-dependence of ZnO substrates is studied. Films are synthesized by the off-axis reactive sputtering deposition. The films have very smooth surface with a roughness ZnO films grown of (0001) ZnO and (0001) sapphire substrates will be also compared and discussed in the presentation.

  7. High pressure and high temperature behaviour of ZnO

    SciTech Connect

    Thakar, Nilesh A.; Bhatt, Apoorva D.; Pandya, Tushar C.

    2014-04-24

    The thermodynamic properties with the wurtzite (B4) and rocksalt (B1) phases of ZnO under high pressures and high temperatures have been investigated using Tait's Equation of state (EOS). The effects of pressures and temperatures on thermodynamic properties such as bulk modulus, thermal expansivity and thermal pressure are explored for both two structures. It is found that ZnO material gradually softens with increase of temperature while it hardens with the increment of the pressure. Our predicted results of thermodynamics properties for both the phases of ZnO are in overall agreement with the available data in the literature.

  8. Green emission in carbon doped ZnO films

    SciTech Connect

    Tseng, L. T.; Yi, J. B. Zhang, X. Y.; Xing, G. Z.; Luo, X.; Li, S.; Fan, H. M.; Herng, T. S.; Ding, J.; Ionescu, M.

    2014-06-15

    The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.

  9. Hierarchical structures of ZnO spherical particles synthesized solvothermally

    NASA Astrophysics Data System (ADS)

    Saito, Noriko; Haneda, Hajime

    2011-12-01

    We review the solvothermal synthesis, using a mixture of ethylene glycol (EG) and water as the solvent, of zinc oxide (ZnO) particles having spherical and flower-like shapes and hierarchical nanostructures. The preparation conditions of the ZnO particles and the microscopic characterization of the morphology are summarized. We found the following three effects of the ratio of EG to water on the formation of hierarchical structures: (i) EG restricts the growth of ZnO microcrystals, (ii) EG promotes the self-assembly of small crystallites into spheroidal particles and (iii) the high water content of EG results in hollow spheres.

  10. PAC studies on impurities in ZnO

    NASA Astrophysics Data System (ADS)

    Deubler, S.; Meier, J.; Schütz, R.; Witthuhn, W.

    1992-01-01

    Acceptor-donor pairs in ZnO are studied by the perturbed angular correlation spectroscopy (PAC) using radioactive 111In/ 111Cd probe atoms. In undoped ZnO the trapping of O-vacancies as well as the trapping of Zn-interstitials at the probe atoms which are located at substitutional Zn sites is observed after different sample treatments. In Cu-, Li-, and Na-doped ZnO the acceptor impurities form complexes with the In donors. The structure of these complexes is given and compared with theoretical calculations.

  11. Green emission in carbon doped ZnO films

    NASA Astrophysics Data System (ADS)

    Tseng, L. T.; Yi, J. B.; Zhang, X. Y.; Xing, G. Z.; Fan, H. M.; Herng, T. S.; Luo, X.; Ionescu, M.; Ding, J.; Li, S.

    2014-06-01

    The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60-100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.

  12. ZnO Nanocoral Structures for Photoelectrochemical Cells

    SciTech Connect

    Ahn, K. S.; Yan, Y.; Shet, S.; Jones, K.; Deutsch, T.; Turner, J.; Al-Jassim, M.

    2008-01-01

    We report on synthesis of a uniform and large area of a new form of ZnO nanocorals. These nanostructures can provide suitable electrical pathways for efficient carrier collection as well as large surface areas for the photoelectrochemical (PEC) cells. PEC devices made from these ZnO nanocoral structures demonstrate significantly enhanced photoresponse as compared to ZnO compact and nanorod films. Our results suggest that the nanocoral structures could be an excellent choice for nanomaterial-based applications such as dye-sensitized solar cells, electrochromic windows, and batteries.

  13. Temperature- and frequency-dependent dielectric behaviors of insulator/semiconductor (Al2O3/ZnO) nanolaminates with various ZnO thicknesses

    NASA Astrophysics Data System (ADS)

    Li, Jin; Bi, Xiaofang

    2016-07-01

    Al2O3/ZnO nanolaminates (NLs) with various ZnO sublayer thicknesses were prepared by atomic layer deposition. The Al2O3 sublayers are characterized as amorphous and the ZnO sublayers have an oriented polycrystalline structure. As the ZnO thickness decreases to a certain value, each NL exhibits a critical temperature at which its dielectric constant starts to rise quickly. Moreover, this temperature increases as the ZnO thickness is decreased further. On the other hand, the permittivity demonstrates a large value of several hundred at a frequency  ⩽1000 Hz, followed by a steplike decrease at a higher frequency. The change in the cut-off frequency with ZnO thickness is characterized by a hook function. It is revealed that the Coulomb confinement effect becomes predominant in the dielectric behaviors of the NLs with very thin ZnO. As the ZnO thickness decreases to about the same as or even smaller than the Bohr radius of ZnO, a great change in the carrier concentration and effective mass of ZnO is induced, which is shown to be responsible for the peculiar dielectric behaviors of Al2O3/ZnO with very thin ZnO. These findings provide insight into the prevailing mechanisms to optimize the dielectric properties of semiconductor/insulator laminates with nanoscale sublayer thickness.

  14. Novel ZnO microballs synthesized via pyrolysis of zinc-acetate in oxygen atmosphere

    NASA Astrophysics Data System (ADS)

    Xia, Xianhui; Zhu, Liping; Ye, Zhizhen; Yuan, Guodong; Zhao, Binghui; Qian, Qing

    2005-09-01

    Novel micrometer-sized ZnO balls have been synthesized on (1 1 1)-Si substrates via pyrolysis of zinc acetate in oxygen atmosphere. The ZnO microballs exhibit unique geometrical shapes with partly porous or hollow structures and their walls are composed of large size textured ZnO microcrystals. The growth mechanism of the ZnO microballs is proposed to be a process following the formation of ZnO film layer, ZnO branches and then ZnO microballs. The phase structure and crystalline structure of the as-grown ZnO microballs were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscope (HRTEM), respectively. The room-temperature photoluminescence (PL) spectrum shows prominent UV emission around 394 nm and weak green emission peaks indicating that there are few defects in the single crystal grains of the ZnO microballs.

  15. Direct observation of voltage barriers in ZnO varistors

    NASA Technical Reports Server (NTRS)

    Krivanek, O. L.; Williams, P.; Lin, Y.-C.

    1979-01-01

    Voltage barriers in a ZnO varistor have been imaged by voltage-contrast scanning electron microscopy. They are due to grain boundaries and are capable of supporting voltage differences of up to about 4 V.

  16. Hydrodynamic fabrication of structurally gradient ZnO nanorods.

    PubMed

    Kim, Hyung Min; Youn, Jae Ryoun; Song, Young Seok

    2016-02-26

    We studied a new approach where structurally gradient nanostructures were fabricated by means of hydrodynamics. Zinc oxide (ZnO) nanorods were synthesized in a drag-driven rotational flow in a controlled manner. The structural characteristics of nanorods such as orientation and diameter were determined by momentum and mass transfer at the substrate surface. The nucleation of ZnO was induced by shear stress which plays a key role in determining the orientation of ZnO nanorods. The nucleation and growth of such nanostructures were modeled theoretically and analyzed numerically to understand the underlying physics of the fabrication of nanostructures controlled by hydrodynamics. The findings demonstrated that the precise control of momentum and mass transfer enabled the formation of ZnO nanorods with a structural gradient in diameter and orientation. PMID:26807679

  17. Synthesis and Optical Properties of ZnO Nanostructures

    NASA Astrophysics Data System (ADS)

    Wang, Duo-Fa; Liao, Lei; Li, Jin-Chai; Fu, Qiang; Peng, Ming-Zeng; Zhou, Jun-Ming

    2005-08-01

    ZnO nanostructures with different morphologies were fabricated by changing the partial oxygen pressure. The structures, morphologies and optical properties of ZnO nanostructures were investigated by x-ray diffraction, field emission scanning electron microscopy and photoluminescence (PL) spectra at room temperature. All the samples show preferred orientation along the c-axis. The oxygen partial pressure and the annealing atmosphere have important effect on the PL property of ZnO nanostructures. The high oxygen partial pressure during growth of samples and high-temperature annealing of the ZnO samples in oxygen can increase oxygen vacancies and can especially increase antisite oxygen (Ozn) defects, which degraded the near band-edge emission. However, the annealing in H2 can significantly modify the NBE emission.

  18. Li doped ZnO thin films for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Sandeep, K. M.; Bhat, Shreesha; Serrao, F. J.; Dharmaprakash, S. M.

    2016-05-01

    We have prepared undoped (ZnO) and Li doped ZnO (LZO) thin films using cost effective sol gel spin coating method.The structural properties were analyzed by X-ray diffraction, and it showed that Li ions occupied interstitial positions in the LZO film. The optical properties like band bending effect, absorption length, band edge sharpness, which have direct impact on solar cell performance has been calculated. The room temperature photoluminescence spectra of the films showed dominant blue emission with CIE coordinate numbers (0.1384, 0.0836) for ZnO and (0.1356, 0.0910) for LZO. The dominating wavelength of the blue emission is present at 470.9 nm and 472.3 nm for ZnO and LZO films respectively. The structural and optical parameters determined in the present study could be used in LED applications.

  19. Vapor Transport of ZnO in Closed Ampoules

    NASA Technical Reports Server (NTRS)

    Palosz, Witold

    2005-01-01

    Vapor transport of ZnO by PVT and CVT using carbon, carbon monoxide, and hydrogen as the transport agents was studied. Theoretical calculations of the mass flux were based on equilibrium thermodynamics and 1-D diffusional mass transport. Experimental results were found to be consistent with theoretical predictions. NO apparent kinetic limitations to sublimation were observed. Slow reaction of carbon with ZnO source was found.

  20. Photoluminescence of polycrystalline ZnO under different annealing conditions

    NASA Astrophysics Data System (ADS)

    Hur, Tae-Bong; Jeen, Gwang Soo; Hwang, Yoon-Hwae; Kim, Hyung-Kook

    2003-11-01

    We investigated polycrystalline zinc oxide (ZnO) with different annealing conditions in air by x-ray photoelectron spectroscopy and photoluminescence. We found that the concentration of antisite oxide (OZn) increases when ZnO ceramics were in an O-rich condition. As the concentration of antisite oxide (OZn) increased, the photoluminescence intensity of the green band emission increased. The crossover temperature of the free and bound excitons was roughly estimated as 100 K.

  1. Anodized ZnO nanostructures for photoelectrochemical water splitting

    NASA Astrophysics Data System (ADS)

    Huang, Mao-Chia; Wang, TsingHai; Wu, Bin-Jui; Lin, Jing-Chie; Wu, Ching-Chen

    2016-01-01

    Zinc oxide (ZnO) nanostructures were fabricated on the polished zinc foil by anodic deposition in an alkaline solution containing 1.0 M NaOH and 0.25 M Zn(NO3)2. Potentiostatic anodization was conducted at two potentials (-0.7 V in the passive region and -1.0 V in the active region vs. SCE) which are higher than the open circuit potential (-1.03 V vs. SCE) and as-obtained ZnO nanostrcutures were investigated focusing on their structural, optical, electrical and photoelectrochemical (PEC) characteristics. All samples were confirmed ZnO by X-ray photoelectron spectroscopy and Raman spectra. Observations in the SEM images clearly showed that ZnO nanostructures prepared at -0.7 V vs. SCE were composed of nanowires at while those obtained at -1.0 V vs. SCE possessed nanosheets morphology. Result from transmission electron microscope and X-ray diffraction patterns suggested that the ZnO nanowires belonged to single crystalline with a preferred orientation of (0 0 2) whereas the ZnO nanosheets were polycrystalline. Following PEC experiments indicated that ZnO nanowires had higher photocurrent density of 0.32 mA/cm2 at 0.5 V vs. SCE under 100 mW/cm2 illumination. This value was about 1.9 times higher than that of ZnO nanosheets. Observed higher photocurrent was likely due to the single crystalline, preferred (0 0 2) orientation, higher carrier concentration and lower charge transfer resistance.

  2. Light emission from electrically stressed ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Lucera, Luca; Adnane, Lhacene; Cil, Kadir; Manthina, Venkata; Agrios, Alexander; Silva, Helena; Gokirmak, Ali

    2012-02-01

    Zinc oxide (ZnO) nanorods were grown on various substrates by a chemical growth process based on a ZnO seed solution, and starting from Zinc acetate (ZnAc) material. The nanorods were grown on insulating silicon (low doped) and oxidized silicon substrates, and also over patterned conducting (highly-doped) nanocrystalline silicon microwires. When high voltage is applied directly to the ZnO film using tungsten needles (˜ 50-60 V across ˜ 5-10 μm), high intensity blue and white light emission is observed, both in air and under high vacuum (10-4 - 10-5 Torr). Blue light appears as broad bright flashes covering a large area whereas white light is more localized and appears to come from individual nanostructures. The results suggest a combination of electroluminescence and photoluminescence processes that take place after an electrical breakdown (possibly across individual ZnO nanorods) that is observed as an exponential increase in current. Percolative conduction and light paths are also observed during the measurements. Measurements of the ZnO films of rods on conducting silicon substrate give more repeatable results, likely due to the higher probability of conducting paths between the two probes. The electrical stress results in significant self-heating and modification of the ZnO nanostructures and the contacts.[4pt] [1] Greene L. E. et al. Solution-Grown Zinc oxide nanowires. Innorganic Chemistry. Vol 45. 7535-7543. (2006)

  3. High efficient ZnO nanowalnuts photocatalyst: A case study

    SciTech Connect

    Yan, Feng; Zhang, Siwen; Liu, Yang; Liu, Hongfeng; Qu, Fengyu; Cai, Xue; Wu, Xiang

    2014-11-15

    Highlights: • Walnut-like ZnO nanostructures are synthesized through a facile hydrothermal method. • Morphologies and microstructures of the as-obtained ZnO products were investigated. • The photocatalytic results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. - Abstract: Walnut-like ZnO nanostructures are successfully synthesized through a facile hydrothermal method. The structure and morphology of the as-synthesized products were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The photocatalytic properties of ZnO nanowalnuts are investigated by photodegradating several organic dyes, such as Congo red (CR), methyl orange (MO) and eosin red aqueous solutions under UV irradiation, respectively. The results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. In addition, eosin red and Congo red (CR) aqueous solution degradation experiments are also conducted in the same condition, respectively. It showed that ZnO nanowalnuts represent high photocatalytic activities with a degradation efficiency of 87% for CR with 115 min of irradiation and 97% for eosin red with 55 min of irradiation. The reported ZnO products may be promising candidates as the photocatalysts in waste water treatment.

  4. Luminescence mechanisms of defective ZnO nanoparticles.

    PubMed

    Camarda, Pietro; Messina, Fabrizio; Vaccaro, Lavinia; Agnello, Simonpietro; Buscarino, Gianpiero; Schneider, Reinhard; Popescu, Radian; Gerthsen, Dagmar; Lorenzi, Roberto; Gelardi, Franco Mario; Cannas, Marco

    2016-06-28

    ZnO nanoparticles (NPs) synthesized by pulsed laser ablation (PLAL) of a zinc plate in deionized water were investigated by time-resolved photoluminescence (PL) and complementary techniques (TEM, AFM, μRaman). HRTEM images show that PLAL produces crystalline ZnO NPs in wurtzite structure with a slightly distorted lattice parameter a. Consistently, optical spectra show the typical absorption edge of wurtzite ZnO (Eg = 3.38 eV) and the related excitonic PL peaked at 3.32 eV with a subnanosecond lifetime. ZnO NPs display a further PL peaking at 2.2 eV related to defects, which shows a power law decay kinetics. Thermal annealing in O2 and in a He atmosphere produces a reduction of the A1(LO) Raman mode at 565 cm(-1) associated with oxygen vacancies, accompanied by a decrease of defect-related emission at 2.2 eV. Based on our experimental results the emission at 2.2 eV is proposed to originate from a photo-generated hole in the valence band recombining with an electron deeply trapped in a singly ionized oxygen vacancy. This investigation clarifies important aspects of the photophysics of ZnO NPs and indicates that ZnO emission can be controlled by thermal annealing, which is important in view of optoelectronic applications. PMID:27251452

  5. Growth mechanism of ZnO low-temperature homoepitaxy

    SciTech Connect

    Park, S. H.; Minegishi, T.; Lee, H. J.; Chang, J. H.; Yao, T.; Oh, D. C.; Ko, H. J.

    2011-09-01

    The authors report on the growth mechanism of ZnO homoepitaxy at the low-temperature range of 500 deg. C, which is unavailable to obtain high-quality ZnO films in heteroepitaxy. One typical set of ZnO films were grown on (0001) ZnO substrates by molecular-beam epitaxy: a standard structure without buffer and two buffered structures with high-temperature (HT) homobuffer and low-temperature (LT) homobuffer. As a result, the LT homobuffered structure had the outstanding material properties: the surface roughness is 0.9 nm, the full width at half maximum of x-ray rocking curve is 13 arcsec, and the emission linewidth of donor-bound excitons is 2.4 meV. In terms of the theoretical interpretation of the experimentally obtained electron mobilities, it was found that the LT homobuffered structure suffers less from the dislocation scattering and the ionized-impurity scattering compared to the HT homobuffered structure. It is proposed that, in the ZnO low-temperature homoepitaxy, the LT homobuffer plays a key role in inducing the complete termination of dislocations in the homointerface and suppressing the outdiffusion of contaminants and point defects on the ZnO surface, which results in the formation of smooth wetting layer on the homointerface.

  6. Synthesis, characteristics and antimicrobial activity of ZnO nanoparticles.

    PubMed

    Janaki, A Chinnammal; Sailatha, E; Gunasekaran, S

    2015-06-01

    The utilization of various plant resources for the bio synthesis of metallic nano particles is called green technology and it does not utilize any harmful protocols. Present study focuses on the green synthesis of ZnO nano particles by Zinc Carbonate and utilizing the bio-components of powder extract of dry ginger rhizome (Zingiber officinale). The ZnO nano crystallites of average size range of 23-26 nm have been synthesized by rapid, simple and eco friendly method. Zinc oxide nano particles were characterized by using X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-ray spectroscopy (EDX). FTIR spectra confirmed the adsorption of surfactant molecules at the surface of ZnO nanoparticles and the presence of ZnO bonding. Antimicrobial activity of ZnO nano particles was done by well diffusion method against pathogenic organisms like Klebsiella pneumonia, Staphylococcus aureus and Candida albicans and Penicillium notatum. It is observed that the ZnO synthesized in the process has the efficient antimicrobial activity. PMID:25748589

  7. Effect of silver doping on ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Gawai, U. P.; Khawal, H. A.; Bodke, M. R.; Dole, B. N.

    2016-05-01

    Ag doped ZnO nanocrystals were synthesized by co-precipitation method with the nominal compositions (x=0.00, 0.02, 0.04, 0.06). The as-synthesized Ag doped ZnO nanocrystals were characterized by X-ray diffraction (XRD), FTIR and UV-Vis. From XRD patterns samples shows hexagonal structure. The average crystallite size is in the range of 41-47 nm. All as synthesized Zn1-xAgxO nanocrystals are highly textured, with wurtzite structure along the (101) growth direction. The energy band gap of pure and Ag doped ZnO were calculated from UV-Vis spectra. FTIR spectra were confirmed that Ag substituted into ZnO. Chemical species of the samples were detected using FTIR spectra An increase in the hexagonal lattice parameters of ZnO is observed on increasing the Ag concentration. An optical absorption study shows an increment in the band gap with increasing Ag content. From optical study the samples determines blue shift. Atomic packing fraction (APF) and c/a ratio were calculated using XRD data. It confirms the formation of ZnO with the stretching vibrational mode around at 506 to 510 cm-1.

  8. Controlled modification of multiwalled carbon nanotubes with Zno nanostructures

    SciTech Connect

    Wang Xiuying; Xia Baiying; Zhu Xingfu; Chen Jiesheng; Qiu Shilun; Li Jixue

    2008-04-15

    Multiwalled carbon nanotubes (MWNTs) have been successfully modified with ZnO nanostructures by zinc-ammonitum complex ion covalently attached to the MWNTs through the C-N bonds. Flower-like ZnO on the tips of MWNTs and ZnO nanoparticles on the surface of MWNTs have been obtained, respectively, via adjusting the reaction time. The modified MWNTs have been characterized with X-ray diffraction, scanning electron and transmission electron microscopy. A growth mechanism has been proposed in which the soaking time plays a key role in controlling the size, morphology, and site of ZnO nanostructures. Photoluminescence properties of the as-synthesized products have also been investigated. - Multiwalled carbon nanotube (MWNT)/flower-like ZnO heterojunctions and MWNT/ZnO nanoparticle composites were prepared by zinc-ammonitum complex ion covalently attached to the MWNTs through the C-N bonds via adjusting the reaction time. A growth mechanism has been proposed in which the soaking time plays a key role in controlling the size, morphology, and site of ZnO nanostructures.

  9. Synthesis, characteristics and antimicrobial activity of ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Janaki, A. Chinnammal; Sailatha, E.; Gunasekaran, S.

    2015-06-01

    The utilization of various plant resources for the bio synthesis of metallic nano particles is called green technology and it does not utilize any harmful protocols. Present study focuses on the green synthesis of ZnO nano particles by Zinc Carbonate and utilizing the bio-components of powder extract of dry ginger rhizome (Zingiber officinale). The ZnO nano crystallites of average size range of 23-26 nm have been synthesized by rapid, simple and eco friendly method. Zinc oxide nano particles were characterized by using X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-ray spectroscopy (EDX). FTIR spectra confirmed the adsorption of surfactant molecules at the surface of ZnO nanoparticles and the presence of ZnO bonding. Antimicrobial activity of ZnO nano particles was done by well diffusion method against pathogenic organisms like Klebsiella pneumonia, Staphylococcus aureus and Candida albicans and Penicillium notatum. It is observed that the ZnO synthesized in the process has the efficient antimicrobial activity.

  10. Applicability check of ZnO crystals for device applications

    NASA Astrophysics Data System (ADS)

    Bhowmick, Mithun; Ullrich, Bruno; Ariza, David; Xi, Haowen

    2014-03-01

    There has always been vital interest in wide-band gap semiconductors for their applicability in short-wavelength photonic devices and in electronic devices operating in high frequency regime. Historically, ZnO was never favored as a potential material for the above applications primarily because of difficulty in growing it. This situation, however, has improved drastically in the past decade thereby renewing the attention on this material system. Hence, ZnO is being proposed for potential light emitting devices in the blue and UV regions of electromagnetic spectrum. ZnO single crystals are also being considered for high power transistors. In this work, we present investigations of optical properties of pure (99.99%) ZnO performing transmittance, reflectance, Raman, and photoluminescence measurements. The ZnO single crystals employed in this work, were obtained commercially. We present detailed analysis of the measured data through theoretical calculations. Our results identify the state-of-the-art application potential of commercially available ZnO, revealing its advantages and limitations when compared to similar materials such as GaN.

  11. ZnO based potentiometric and amperometric nanosensors.

    PubMed

    Willander, Magnus; Khun, Kimleang; Ibupoto, Zafar Hussain

    2014-09-01

    The existence of nanomaterials provides the solid platform for sensing applications due to owing of high sensitivity and a low concentration limit of detection. More likely used nanomaterials for sensing applications includes gold nanoparticles, carbon nanotubes, magnetic nanoparticles such as Fe3O4, quantum dots and metal oxides etc. Recently nanomaterial and biological detection becomes an interdisciplinary field and is very much focussed by the researchers. Among metal oxides ZnO is largely considered due to its less toxic nature, biocompatible, cheap and easy to synthesis. ZnO nanomaterial is highly used for the chemical sensing, especially electrochemical sensing due to its fascinating properties such as high surface to volume ratio, atoxic, biosafe and biocompatible. Moreover, ZnO nanostructures exhibit unique features which could expose a suitable nanoenviroment for the immobilization of proteineous material such as enzymes, DNA, antibodies, etc. and in doing so it retains the biological efficiency of the immobilized bio sensitive material. The following review describes the two different coatings (i.e., ionophore and enzyme) on the surface of ZnO nanorods for the chemical sensing of zinc ion detection, thallium (I) ion detection, and L-lactic acid and the measurement of galactose molecules. ZnO nanorods provide the excellent transducing properties in the generation of strong electrical signals. Moreover, this review is very much focused on the applications of ZnO nanostructures in the sensing field. PMID:25924295

  12. Electrochemical growth of ZnO nanoplates

    NASA Astrophysics Data System (ADS)

    Illy, B.; Shollock, B. A.; MacManus-Driscoll, J. L.; Ryan, M. P.

    2005-02-01

    ZnO films were grown on polycrystalline Zn foil by cathodic electrodeposition in an aqueous zinc chloride/calcium chloride solution at 80 °C. Variation in the electrochemical parameters resulted in a variation in growth morphology from 1D (nanorods), 2D ('nanoplates') to 3D crystal growth. An as-received or mechanically polished substrate proved the most suitable substrate finish and allowed more highly aligned, dense structures to be grown; in contrast, electropolished substrates formed inhomogeneous deposits. Substrate annealing gave rise to large homogenous areas of nanorod deposition. Two-dimensional sheet growth was found to occur in conjunction with nanorods under specific electrochemical conditions. Hexagonal 'plates' approximately 50 nm in thickness and several microns in diameter were formed normal to the substrate.

  13. Excitonic transport in ZnO

    NASA Astrophysics Data System (ADS)

    Noltemeyer, Martin; Bertram, Frank; Hempel, Thomas; Bastek, Barbara; Christen, Juergen; Brandt, Matthias; Lorenz, Michael; Grundmann, Marius

    2012-02-01

    The temperature dependence of diffusion length and lifetime or diffusivity of the free exciton is measured in a commercial ZnO-substrate and in an epitaxial ZnO quantum well using nm-spatially and ps-time resolved cathodoluminescence (CL) spectroscopy. The characteristic temperature dependence of the exciton mobility is a fingerprint of the underlying excitonic scattering processes. Since excitons are neutral particles scattering at ionized impurities should be not effective. With decreasing temperature diffusion lengths and lifetimes give rise to a monotonous increase of the excitonic mobility. Two different methods for determining the excitonic transport parameters will be presented. On the one hand we are able to perform completely pulsed excitation experiments and on the other hand a combination of cw- and pulsed excitation in two independent measurements are needed.

  14. Lateral arrays of vertical ZnO nanowalls on a periodically polarity-inverted ZnO template.

    PubMed

    Lee, Sang Hyun; Minegishi, Tsutomu; Ha, Jun-Seok; Park, Jin-sub; Lee, Hyo-Jong; Lee, Hyun Jung; Shiku, Hitoshi; Matsue, Tomokazu; Hong, Soon-Ku; Jeon, Heonsu; Yao, Takafumi

    2009-06-10

    Well aligned ZnO nanowall arrays with submicron pitch were grown on a periodically polarity-inverted ZnO template using a carbothermal reduction process. Under the conditions of a highly dense Au catalyst for increasing nucleation sites, ZnO nanowalls with a thickness of 126 +/- 10 nm, an average height of 3.4 microm, and a length of about 10 mm were formed on the template. The nanowalls were only grown on a Zn-polar surface due to a different growth mode with an O-polar surface. The results of x-ray diffraction and photoluminescence (PL) measurements revealed a single crystalline, vertical alignment on the template, and a large surface to volume ratio of the ZnO nanowalls. PMID:19448285

  15. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    NASA Astrophysics Data System (ADS)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  16. Self-assembled ZnO nanoparticles on ZnO microsheet: ultrafast synthesis and tunable photoluminescence properties

    NASA Astrophysics Data System (ADS)

    Brahma, Sanjaya; Khatei, Jayakrishna; Sunkara, S.; Lo, K.-Y.; Shivashankar, S. A.

    2015-06-01

    We report on the tunable photoluminescence characteristics of porous ZnO microsheets fabricated within 1-5 min of microwave irradiation in the presence of a capping agent such as citric acid, and mixture of citric acid with polyvinylpyrrolidone (PVP). The UV emission intensity reduces to 60% and visible emission increases tenfold when the molar concentration of citric acid is doubled. Further diminution of the intensity of UV emission (25%) is observed when PVP is mixed with citric acid. The addition of nitrogen donor ligands to the parent precursor leads to a red shift in the visible luminescence. The deep level emission covers the entire visible spectrum and gives an impression of white light emission from these ZnO samples. The detailed luminescence mechanism of our ZnO samples is described with the help of a band diagram constructed by using the theoretical models that describe the formation energy of the defect energy levels within the energy band structure. Oxygen vacancies play the key role in the variation of the green luminescence in the ZnO microsheets. Our research findings provide an insight that it is possible to retain the microstructure and simultaneously introduce defects into ZnO. The growth of the ZnO microsheets may be due to the self assembly of the fine sheets formed during the initial stage of nucleation.

  17. Luminance behavior of lithium-doped ZnO nanowires with p-type conduction characteristics.

    PubMed

    Ko, Won Bae; Lee, Jun Seok; Lee, Sang Hyo; Cha, Seung Nam; Sohn, Jung Inn; Kim, Jong Min; Park, Young Jun; Kim, Hyun Jung; Hong, Jin Pyo

    2013-09-01

    The present study describes the room-temperature cathodeluminescence (CL) and temperature-dependent photoluminescence (PL) properties of p-type lithium (Li)-doped zinc oxide (ZnO) nanowires (NWs) grown by hydrothermal doping and post-annealing processes. A ZnO thin film was used as a seed layer in NW growth. The emission wavelengths and intensities of undoped ZnO NWs and p-type Li-doped ZnO NWs were analyzed for comparison. CL and PL observations of post-annealed p-type Li-doped ZnO NWs clearly exhibited a dominant sharp band-edge emission. Finally, a n-type ZnO thin film/p-type annealed Li-doped ZnO NW homojunction diode was prepared to confirm the p-type conduction of annealed Li-doped ZnO NWs as well as the structural properties measured by transmission electron microscopy. PMID:24205635

  18. Fabrication and photovoltaic properties of ZnO nanorods/perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Shirahata, Yasuhiro; Tanaike, Kohei; Akiyama, Tsuyoshi; Fujimoto, Kazuya; Suzuki, Atsushi; Balachandran, Jeyadevan; Oku, Takeo

    2016-02-01

    ZnO nanorods/perovskite solar cells with different lengths of ZnO nanorods were fabricated. The ZnO nanorods were prepared by chemical bath deposition and directly confirmed to be hexagon-shaped nanorods. The lengths of the ZnO nanorads were controlled by deposition condition of ZnO seed layer. Photovoltaic properties of the ZnO nanorods/CH3NH3PbI3 solar cells were investigated by measuring current density-voltage characteristics and incident photon to current conversion efficiency. The highest conversion efficiency was obtained in ZnO nanorods/CH3NH3PbI3 with the longest ZnO nanorods.

  19. Solution precursor plasma deposition of nanostructured ZnO coatings

    SciTech Connect

    Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

    2011-08-15

    Highlights: {yields} The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. {yields} It is highly capable of developing tailorable nanostructures. {yields} This technique can be employed to spray the coatings on any kind of substrates including polymers. {yields} The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance ({approx}65-80%) and reflectivity ({approx}65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 m{Omega} cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

  20. Growth of Homoepitaxial ZnO Semiconducting Films

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.; Harris, M. T.; George, M. A.; McCarty, P.

    1999-01-01

    As a high temperature wide-band-gap (3.3 eV at room temperature) semiconductor, ZnO has been used for many applications such as wave-guides, solar cells, and surface acoustic wave devices, Since ZnO has a 60 meV excitonic binding energy that makes it possible to produce excitonic lasing at room temperature, a recent surge of interest is to synthesize ZnO films for UV/blue/green laser diodes. These applications require films with a smooth surface, good crystal quality, and low defect density. Thus, homoepitaxial film growth is the best choice. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystal substrates grown by the hydrothermal method are mechanically polished and annealed in air for four hours before the films are deposited. The annealing temperature-dependence on ZnO substrate morphology and electrical properties is investigated. Films are synthesized by off-axis reactive sputtering deposition. This produces films that have very smooth surfaces with roughness less than or equal to 5 nm on a 5 microns x 5 microns area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than that of the crystal substrate. Films are also characterized by measuring resistivity, optical transmittance, and photoluminescence. The properties of ZnO films grown on (0001) ZnO and (0001) sapphire substrates will also be compared and discussed.

  1. Heavy quark masses

    NASA Technical Reports Server (NTRS)

    Testa, Massimo

    1990-01-01

    In the large quark mass limit, an argument which identifies the mass of the heavy-light pseudoscalar or scalar bound state with the renormalized mass of the heavy quark is given. The following equation is discussed: m(sub Q) = m(sub B), where m(sub Q) and m(sub B) are respectively the mass of the heavy quark and the mass of the pseudoscalar bound state.

  2. Role of morphology in the aggregation kinetics of ZnO nanoparticles.

    PubMed

    Zhou, Dongxu; Keller, Arturo A

    2010-05-01

    The aggregation kinetics of two types of ZnO nanoparticles were investigated under various conditions. Distinct differences in aggregation kinetics were observed between the two ZnO particles. The aggregation of the nearly spherical ZnO (denoted as Me ZnO) exhibited strong dependence on the ionic strength (IS) of the solution; while minimal influence of IS was seen on the irregularly shaped ZnO (mixture of slab-like and rod-shaped particles, denoted as Mk ZnO) in the IS ranged tested. It is postulated that Mk ZnO possesses a critical coagulation concentration (CCC) below the lowest electrolyte concentration tested (1 mM NaCl) due to the interactions between various surfaces. The CCC of ZnO was found to be a function of pH; the CCC increased significantly as the pH was further away from the point of zero charge. Natural organic matter (NOM) was found to substantially hinder the aggregation of both types of ZnO particles (above 10 mg/L for Me ZnO and above 1 mg/L for Mk ZnO). A Langmuir adsorption model was used to describe the NOM to ZnO nanoparticle adsorption isotherms. To our knowledge, this is the first study to report the effect of particle morphology on nanoparticle aggregation, which outlines the importance of accounting morphology into environmental transport assessment of nanoparticles. PMID:20227744

  3. Gd{sup 3+} incorporated ZnO nanoparticles: A versatile material

    SciTech Connect

    Kumar, Surender Sahare, P.D.

    2014-03-01

    Graphical abstract: - Highlights: • Chemically synthesized Gd{sup 3+} doped ZnO nanoparticles. • The broad visible emission of the ZnO is dependent on the surface defects and can be tailored by Gd{sup 3+} doing. • PL and magnetic properties are modified by Gd{sup 3+} doping. • Photocatalysis experiment reveals that the ZnO: Gd{sup 3+} degrades the Rh B dye faster than the undoped ZnO. - Abstract: Gd{sup 3+} doped ZnO nanoparticles are synthesized by wet chemical route method and investigated through structural, optical, magnetic and photocatalytic properties. Transmission Electron Microscopy technique has been performed on undoped and Gd{sup 3+} doped ZnO nanoparticles. X-ray diffraction, X-ray photoelectron spectroscopy and Raman analyses are carried out in order to examine the desired phase formation and substitution of Gd{sup 3+} in the ZnO matrix. Gd{sup 3+} doped ZnO nanoparticles show enhanced photoluminescent and ferromagnetic properties as compared to undoped ZnO. The broad visible emission of ZnO is found to be largely dependent on the surface defects and these surface defects can be tailored by Gd{sup 3+} doping concentration. Furthermore, Gd{sup 3+} doped ZnO nanoparticles also show improved photocatalytic properties as compared with undoped ZnO nanoparticles under ultraviolet irradiation.

  4. Mutagenicity of heavy metals

    SciTech Connect

    Wong, P.K.

    1988-04-01

    Certain heavy metals are required, as trace elements for normal cellular functions. However, heavy metals are toxic to cells once their levels exceed their low physiological values. The toxicity of heavy metals on microorganisms, and on animals has been well-documented. These interactions may induce the alteration of the primary as well as secondary structures of the DNA and result in mutation(s). The present communication reports the results in determining the mutagenicity and carcinogenicity of ten heavy metals commonly found in polluted areas by using the Salmonella/mammalian-microsome mutagenicity test.

  5. ZnO Thin Film Electronics for More than Displays

    NASA Astrophysics Data System (ADS)

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  6. Controlling Au Photodeposition on Large ZnO Nanoparticles.

    PubMed

    Fernando, Joseph F S; Shortell, Matthew P; Noble, Christopher J; Harmer, Jeffrey R; Jaatinen, Esa A; Waclawik, Eric R

    2016-06-01

    This study investigated how to control the rate of photoreduction of metastable AuCl2(-) at the solid-solution interface of large ZnO nanoparticles (NPs) (50-100 nm size). Band-gap photoexcitation of electronic charge in ZnO by 370 nm UV light yielded Au NP deposition and the formation of ZnO-Au NP hybrids. Au NP growth was observed to be nonepitaxial, and the patterns of Au photodeposition onto ZnO NPs observed by high-resolution transmission electron microscopy were consistent with reduction of AuCl2(-) at ZnO facet edges and corner sites. Au NP photodeposition was effective in the presence of labile oleylamine ligands attached to the ZnO surface; however, when a strong-binding dodecanethiol ligand coated the surface, photodeposition was quenched. Rates of interfacial electron transfer at the ZnO-solution interface were adjusted by changing the solvent, and these rates were observed to strongly depend on the solvent's permittivity (ε) and viscosity. From measurements of electron transfer from ZnO to the organic dye toluidine blue at the ZnO-solution interface, it was confirmed that low ε solvent mixtures (ε ≈ 9.5) possessed markedly higher rates of photocatalytic interfacial electron transfer (∼3.2 × 10(4) electrons·particle(-1)·s(-1)) compared to solvent mixtures with high ε (ε = 29.9, ∼1.9 × 10(4) electrons·particle(-1)·s(-1)). Dissolved oxygen content in the solvent and the exposure time of ZnO to band-gap, near-UV photoexcitation were also identified as factors that strongly affected Au photodeposition behavior. Production of Au clusters was favored under conditions that caused electron accumulation in the ZnO-Au NP hybrid. Under conditions where electron discharge was rapid (such as in low ε solvents), AuCl2(-) precursor ions photoreduced at ZnO surfaces in less than 5 s, leading to deposition of several small, isolated ∼6 nm Au NP on the ZnO host instead. PMID:27196721

  7. Fluorescent security markers on ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Warren, Kristy; Tzolov, Marian

    2012-02-01

    Zink oxide is an efficient emitter of light thanks to the large exciton binding energy of 60 meV. The narrow emission lines from ZnO nanowires can be used as an enhanced security feature in documents and can be easily recognized from the background originating from the paper itself. We have studied the emission properties of ZnO nanowires in the UV range and how they can be implemented into paper products for document security. The zinc oxide nanowires were synthesized by chemical vapor transport and postprocessed in solution. The nanowires were dispersed using a sonicator into nitric acid water solutions with a pH of 2 and 4, and ammonium hydroxide water solution with a pH of 5 and 7. The morphology of the dispersed ZnO nanowires was imaged under a scanning electron microscope. Fluorescence measurements have shown better light emission from the nanoparticles dispersed in the basic pH solution. This material was then implemented into crafted paper and viewed under UV lamps and with a spectrometer. We have studied the loading of the paper with ZnO nanoparticles. A comparison was done with equivalently processed material of ZnO in powder form. The implementation of zinc oxide nanowires into paper products can advance document security at a relatively low cost.

  8. Efficient nitrogen incorporation in ZnO nanowires

    PubMed Central

    Stehr, Jan E.; Chen, Weimin M.; Reddy, Nandanapalli Koteeswara; Tu, Charles W.; Buyanova, Irina A.

    2015-01-01

    One-dimensional ZnO nanowires (NWs) are a promising materials system for a variety of applications. Utilization of ZnO, however, requires a good understanding and control of material properties that are largely affected by intrinsic defects and contaminants. In this work we provide experimental evidence for unintentional incorporation of nitrogen in ZnO NWs grown by rapid thermal chemical vapor deposition, from electron paramagnetic resonance spectroscopy. The incorporated nitrogen atoms are concluded to mainly reside at oxygen sites (NO). The NO centers are suggested to be located in proximity to the NW surface, based on their reduced optical ionization energy as compared with that in bulk. This implies a lower defect formation energy at the NW surface as compared with its bulk value, consistent with theoretical predictions. The revealed facilitated incorporation of nitrogen in ZnO nanostructures may be advantageous for realizing p-type conducting ZnO via N doping. The awareness of this process can also help to prevent such unintentional doping in structures with desired n-type conductivity. PMID:26299157

  9. Hydrogen-Induced Plastic Deformation in ZnO

    NASA Astrophysics Data System (ADS)

    Lukáč, F.; Čížek, J.; Vlček, M.; Procházka, I.; Anwand, W.; Brauer, G.; Traeger, F.; Rogalla, D.; Becker, H.-W.

    In the present work hydrothermally grown ZnO single crystals covered with Pd over-layer were electrochemically loaded with hydrogen and the influence of hydrogen on ZnO micro structure was investigated by positron annihilation spectroscopy (PAS). Nuclear reaction analysis (NRA) was employed for determination of depth profile of hydrogen concentration in the sample. NRA measurements confirmed that a substantial amount of hydrogen was introduced into ZnO by electrochemical charging. The bulk hydrogen concentration in ZnO determined by NRA agrees well with the concentration estimated from the transported charge using the Faraday's law. Moreover, a subsurface region with enhanced hydrogen concentration was found in the loaded crystals. Slow positron implantation spectroscopy (SPIS) investigations of hydrogen-loaded crystal revealed enhanced concentration of defects in the subsurface region. This testifies hydrogen-induced plastic deformation of the loaded crystal. Absorbed hydrogen causes a significant lattice expansion. At low hydrogen concentrations this expansion is accommodated by elastic straining, but at higher concentrations hydrogen-induced stress exceeds the yield stress in ZnO and plastic deformation of the loaded crystal takes place. Enhanced hydrogen concentration detected in the subsurface region by NRA is, therefore, due to excess hydrogen trapped at open volume defects introduced by plastic deformation. Moreover, it was found that hydrogen-induced plastic deformation in the subsurface layer leads to typical surface modification: formation of hexagonal shape pyramids on the surface due to hydrogen-induced slip in the [0001] direction.

  10. Genomic DNA binding to ZnO microrods

    NASA Astrophysics Data System (ADS)

    Guzmán-Embús, D. A.; Cardozo, M. Orrego; Vargas-Hernández, C.

    2015-08-01

    In this work, ZnO microrods were produced by hydrothermal synthesis. DNA was extracted from pork spleen cells by cellular lysis, deproteinization and precipitation. The analysis of the DNA binding to the ZnO was performed using Raman spectroscopy a technique that allowed for the evaluation of the effect that the presence of the ZnO in the complex has on the DNA structure. Vibrational spectral bands from the DNA molecule and hexagonal wurtzite ZnO were observed and classified as E2(M), A1(TO), E2(High), E1(LO) and 2LO. The Raman signals from the vibrational bands corresponding to the phosphodiester bond 5‧-C-O-P-O-C-3‧ and bond stretching of the PO2- group, as well as ring vibrations of the nitrogenous bases of the DNA, were enhanced by the presence of the ZnO microrods. The bands from the modes corresponding to the C-O and Odbnd Psbnd O- molecules of the DNA backbone were observed to exhibit larger spectral shifts due to the compression and tensile stresses generated at the ZnO/DNA interface, respectively. In addition, the relative vibrational mode intensities of the nitrogenous bases increased.

  11. Efficient nitrogen incorporation in ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Stehr, Jan E.; Chen, Weimin M.; Reddy, Nandanapalli Koteeswara; Tu, Charles W.; Buyanova, Irina A.

    2015-08-01

    One-dimensional ZnO nanowires (NWs) are a promising materials system for a variety of applications. Utilization of ZnO, however, requires a good understanding and control of material properties that are largely affected by intrinsic defects and contaminants. In this work we provide experimental evidence for unintentional incorporation of nitrogen in ZnO NWs grown by rapid thermal chemical vapor deposition, from electron paramagnetic resonance spectroscopy. The incorporated nitrogen atoms are concluded to mainly reside at oxygen sites (NO). The NO centers are suggested to be located in proximity to the NW surface, based on their reduced optical ionization energy as compared with that in bulk. This implies a lower defect formation energy at the NW surface as compared with its bulk value, consistent with theoretical predictions. The revealed facilitated incorporation of nitrogen in ZnO nanostructures may be advantageous for realizing p-type conducting ZnO via N doping. The awareness of this process can also help to prevent such unintentional doping in structures with desired n-type conductivity.

  12. Sodium enrichment on glass surface during heating of heavy-metal-containing glasses under a reductive atmosphere

    NASA Astrophysics Data System (ADS)

    Okada, Takashi; Nishimura, Fumihiro; Yonezawa, Susumu

    Sodium enrichment occurs on the surface of the glass that is in contact with the gas phase during the heat treatment of lead-containing glass under a reductive atmosphere. This technique was previously found to promote lead recovery in waste-glass treatment, and may be potentially applied to glasses containing other heavy metal oxides. Thus, the efficiencies of sodium enrichment were compared among glasses with different heavy metal species (PbO, CuO, and ZnO) in the heat-treatment under a CO-containing atmosphere. The sodium enrichment efficiencies in the treatment of the PbO- and CuO-containing glasses were higher than that in the treatment of the ZnO containing glass. This was because the efficiencies were related to the reduction of the heavy metal oxides. The mass ratio of Na to Si on the glass surface increased as the PbO concentration decreased via reduction of PbO. The sodium-rich phase was separated together with a copper-concentrated phase that was generated via the reduction of CuO. However, ZnO in the glass is thermodynamically more difficult to reduce in the CO-containing atmosphere used in the study, resulting in the lower efficiency of the sodium enrichment.

  13. Fabrication of ZnO and doped ZnO waveguides deposited by Spin Coating

    NASA Astrophysics Data System (ADS)

    Mohan, Rosmin Elsa; R, Neha P.; T, Shalu; C, Darshana K.; Sreelatha, K. S.

    2015-02-01

    In this paper, the synthesis of ZnO and doped Zn1-xAgxO (where x=0.03) nanoparticles by co- precipitation is reported. The precursors used were Zinc Nitrate and Potassium hydroxide pellets. For doping, 3% AgNO3 in ZnNO3 was considered as a separate buffer solution. The prepared nanoparticles were subsequently spin coated onto silica glass substrates at a constant chuck rate of 3000 rpm. The substrate acts as the lower cladding of a waveguide structure. The upper cladding is assumed to be air in the present investigation. The nanostructures of the ZnO powders in the doped and undoped cases were studied using X-ray Diffraction patterns. There was a decrease in the grain size with doping which increase the tunability of the powders to be used as photoluminescent devices. The optical characteristics of the sample were also investigated using UV-Visible spectrophotometer at 200-900 nm wavelengths. The photoluminescence peaks also report a dramatic increase in intensity at the same wavelength for the doped case compared to the undoped one.

  14. Structural and optical properties of ZnO rods hydrothermally formed on polyethersulfone substrates

    NASA Astrophysics Data System (ADS)

    Shin, Chang Mi; Jang, Jin-Tak; Kim, Chang-Yong; Ryu, Hyukhyun; Lee, Won-Jae; Chang, Ji-Ho; Son, Chang-Sik; Choi, Heelack

    2012-06-01

    Various unique ZnO morphologies, such as cigar-like and belt-like structures and microrod and nanorod structures, were formed on flexible polyethersulfone (PES) substrates by using a low temperature hydrothermal route. The structural properties of ZnO depended highly on the precursor concentration. The effect of a thin ZnO seed layer deposited the on PES substrate by using atomic layer deposition on the structural and the optical properties of ZnO hydrothermally grown on the ZnO seed layer/PES substrates was studied. Field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL) measurements were employed to analyze the characteristics of hydrothermally-grown ZnO. The diameter of the ZnO nanorods grown on the ZnO seed layer/PES substrates increased with increasing precursor concentration from 0.025 to 0.125 M due to the Ostwald ripening process. ZnO hydrothermally-grown on the ZnO seed layer/PES substrates at a low precursor concentration showed better structural properties than ZnO formed without a seed layer. Well-formed ZnO nanorods deposited on the ZnO seed layer/PES substrates showed two PL peaks, one in the ultraviolet and the other in the visible region, whereas horizontally positioned ZnO formed on the PES substrate in the absence of a seed layer emitted only one broad PL peak in the violet region. The ZnO grown on PES substrates in this work can be used as high-quality transparent electrodes for solar cells fabricated on flexible substrates.

  15. Heavy-electron materials

    SciTech Connect

    Fisk, Z.; Ott, H.R.; Smith, J.L.

    1986-01-01

    De Haas-van Alphen results demonstrated the existence of a Fermi surface at sufficiently low temperature and show that the entire Fermi surface involves heavy electrons. The phase transitions in their heavy-electron state are discussed. These are either magnetic or superconducting. 38 refs., 6 figs., 2 tabs. (WRF)

  16. Electrical Property of Conventionally Sintered ZnO

    NASA Astrophysics Data System (ADS)

    Tak, S. K.; Shekhwat, M. S.; Mangal, R.

    ZnO powder was synthesized by solid state reaction method. The synthesized powder was granulated and pressed using uni-axial press for preparing the pallets. The prepared pellets were sintered in conventional furnace at different temperatures (900-1300° C). The phase study was done by powder X-ray diffraction and it was found that the there is no other phase present in the synthesized material but the peak intensity is increasing with temperature. The crystallite size of the synthesized ZnO powder was found to be increase with temperature. The effect of sintering on grain growth is investigated by scanning electron microscopy (SEM). SEM revels that the average grain size is increases with increase in sintering temperature. AC impedance of these samples was decreased markedly with increased sintering temperature. In present work the effect of sintering temperatures and hold time on micro structural and electrical properties of ZnO ceramics is carried out.

  17. Nanodamage and Nanofailure of 1d Zno Nanomaterials and Nanodevices

    NASA Astrophysics Data System (ADS)

    Li, Peifeng; Yang, Ya; Huang, Yunhua; Zhang, Yue

    2012-08-01

    One-dimensional (1D) ZnO nanomaterials include nanowires, nanobelts, and nanorods etc. The extensive applied fields and excellent properties of 1D ZnO nanomaterials can meet the requests of the electronic and electromechanical devices for "smaller, faster and colder", and would be applied in new energy convention, environmental protection, information science and technology, biomedical, security and defense fields. While micro porous, etching pits nanodamage and brittle fracture, dissolving, functional failure nanofailure phenomena of 1D ZnO nanomaterials and nanodevices are observed in some practical working environments like illumination, currents or electric fields, external forces, and some chemical gases or solvents. The more important thing is to discuss the mechanism and reduce or prohibit their generation.

  18. High mobility ZnO nanowires for terahertz detection applications

    NASA Astrophysics Data System (ADS)

    Liu, Huiqiang; Peng, Rufang; Chu, Sheng; Chu, Shijin

    2014-07-01

    An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (˜0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

  19. Nitrogen is a deep acceptor in ZnO

    DOE PAGESBeta

    Tarun, M. C.; Iqbal, M. Zafar; McCluskey, M. D.

    2011-04-14

    Zinc oxide is a promising material for blue and UV solid-state lighting devices, among other applications. Nitrogen has been regarded as a potential p-type dopant for ZnO. However, recent calculations indicate that nitrogen is a deep acceptor. This paper presents experimental evidence that nitrogen is, in fact, a deep acceptor and therefore cannot produce p-type ZnO. A broad photoluminescence (PL) emission band near 1.7 eV, with an excitation onset of ~2.2 eV, was observed, in agreement with the deep-acceptor model of the nitrogen defect. Thus the deep-acceptor behavior can be explained by the low energy of the ZnO valence bandmore » relative to the vacuum level.« less

  20. Nitrogen is a deep acceptor in ZnO

    SciTech Connect

    Tarun, M. C.; Iqbal, M. Zafar; McCluskey, M. D.

    2011-04-14

    Zinc oxide is a promising material for blue and UV solid-state lighting devices, among other applications. Nitrogen has been regarded as a potential p-type dopant for ZnO. However, recent calculations indicate that nitrogen is a deep acceptor. This paper presents experimental evidence that nitrogen is, in fact, a deep acceptor and therefore cannot produce p-type ZnO. A broad photoluminescence (PL) emission band near 1.7 eV, with an excitation onset of ~2.2 eV, was observed, in agreement with the deep-acceptor model of the nitrogen defect. Thus the deep-acceptor behavior can be explained by the low energy of the ZnO valence band relative to the vacuum level.

  1. Excellent acetone sensing properties of porous ZnO

    NASA Astrophysics Data System (ADS)

    Liu, Chang-Bai; Liu, Xing-Yi; Wang, Sheng-Lei

    2015-01-01

    Porous ZnO was obtained by hydrothermal method. The results of scanning electron microscope revealed the porous structure in the as-prepared materials. The acetone sensing test results of porous ZnO show that porous ZnO possesses excellent acetone gas sensing properties. The response is 35.5 at the optimum operating temperature of 320 °C to 100 ppm acetone. The response and recovery times to 50 ppm acetone are 2 s and 8 s, respectively. The lowest detecting limit to acetone is 0.25 ppm, and the response value is 3.8. Moreover, the sensors also exhibit excellent selectivity and long-time stability to acetone. Projected supported by the Project of Challenge Cup for College Students, China (Grant No. 450060497053).

  2. Mobility of indium on the ZnO(0001) surface

    NASA Astrophysics Data System (ADS)

    Heinhold, R.; Reeves, R. J.; Williams, G. T.; Evans, D. A.; Allen, M. W.

    2015-02-01

    The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at ˜520 °C, with indium migrating from the ( 000 1 ¯ ) underside of the wafer, around the non-polar ( 1 1 ¯ 00 ) and ( 11 2 ¯ 0 ) sidewalls, to form a uniform self-organized (˜20 Å) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In2O3 precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentional In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates.

  3. Mobility of indium on the ZnO(0001) surface

    SciTech Connect

    Heinhold, R.; Reeves, R. J.; Allen, M. W.; Williams, G. T.; Evans, D. A.

    2015-02-02

    The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at ∼520 °C, with indium migrating from the (0001{sup ¯}) underside of the wafer, around the non-polar (11{sup ¯}00) and (112{sup ¯}0) sidewalls, to form a uniform self-organized (∼20 Å) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In{sub 2}O{sub 3} precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentional In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates.

  4. Structural and optical properties of ZnO and ZnO:Fe nanoparticles under dense electronic excitations

    SciTech Connect

    Kumar, Shiv; Singh, Ranjan Kr.; Ghosh, Anup K.; Asokan, K.; Kanjilal, D.; Chatterjee, S.

    2013-10-28

    We report on the changes in structural, morphological, and optical properties of sol-gel derived ZnO and ZnO:Fe nanoparticles due to dense electronic excitations produced by heavy ion irradiations using 200 MeV Ag{sup +15} ion beams. X-ray diffraction studies with Rietveld refinement show that the samples are single phase and tensile strain has been developed in the ion-irradiated samples. The Raman spectroscopy measurements show that ion-irradiation results in microscopic structural disorders and breaking of translational symmetry giving rise to local distortions in the lattice. Atomic force microscopy studies show that roughness of the pellets increases strongly for pure ZnO as compared with Fe-doped ZnO due to ion-irradiation. Fourier transform infrared analysis confirms tetrahedral coordination of O ions surrounding the Zn-ions and surface modification of the nanoparticles. The UV-Vis spectroscopy measurements show that the band gap increases on Fe doping which may be due to 4s–3d and 2p–3d interactions and the Burstein-Moss band filling effect. The band gap decreases after irradiation which can be interpreted on the basis of creation of some new localized energy states above the valence band. Photoluminescence (PL) intensity is enhanced and two new emission bands viz. a blue band at ∼480 nm (related to surface defects) and a green band at ∼525 nm (related to O vacancies) are observed in ion-irradiated nanoparticles. The enhancement of PL-intensity in irradiated samples is attributed to the increase of different defect states and Zn−O bonds on the surfaces of the irradiated nanoparticles arising from surface modification.

  5. Evolution of tetrapod structure in sonochemically synthesized ZnO: B nanopowders

    NASA Astrophysics Data System (ADS)

    Panda, N. R.; Acharya, B. S.; Nayak, P.

    2012-06-01

    Sonochemical synthesis of ZnO and ZnO doped with boron has been carried out in a conventional sonicator and the presence of boron has been confirmed from ICP-OES measurement. PXRD indicates the formation of hexagonal wurzite structure of ZnO with larger crystallite size in the doped samples. TEM studies show the formation of tetrapod like structures for ZnO: B samples which is not seen in ZnO as prepared. The evolution of tetrapods has been explained on the base of impurity adsorption and carbo-thermal reduction taking place during the process of sonication.

  6. Ferromagnetism in Sm doped ZnO nanorods by a hydrothermal method

    NASA Astrophysics Data System (ADS)

    Piao, Jingyuan; Tseng, Li-Ting; Yi, Jiabao

    2016-04-01

    Sm doped ZnO nanorods with various concentrations have been successfully synthesized using a hydrothermal method. XRD analysis indicates that there are no impurities or secondary phases in all the samples. The continuous expansion of d-spacing from XRD and TEM analysis suggests the effective corporation of Sm ions in ZnO. It is found that pure ZnO is paramagnetic. Both 1% and 5% Sm doped ZnO nanorods are ferromagnetic at room temperature. 5% Sm doped ZnO has a large paramagnetic signal at low temperature, suggesting the formation of the precipitation or clusters of samarium oxide.

  7. Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates

    SciTech Connect

    Park, Jinsub; Yao, Takafumi

    2012-10-15

    We report on the fabrication and characterization of periodically polarity inverted (PPI) ZnO heterostructures on (0 0 0 1) Al{sub 2}O{sub 3} substrates. For the periodically inverted array of ZnO polarity, CrN and Cr{sub 2}O{sub 3} polarity selection buffer layers are used for the Zn- and O-polar ZnO films, respectively. The change of polarity and period in fabricated ZnO structures is evaluated by diffraction patterns and polarity sensitive piezo-response microscopy. Finally, PPI ZnO structures with subnanometer scale period are demonstrated by using holographic lithography and regrowth techniques.

  8. Structural and electrical properties of electric field assisted spray deposited pea structured ZnO film

    NASA Astrophysics Data System (ADS)

    Chaturvedi, Neha; Swami, Sanjay Kumar; Dutta, Viresh

    2016-05-01

    Spray deposition of ZnO film was carried out. The uneven growth of ZnO nanostructures is resulted for spray deposited ZnO film. Application of DC voltage (1000V) during spray deposition provides formation of pea like structures with uniform coverage over the substrate. Electric field assisted spray deposition provides increased crystallinity with reduced resistivity and improved mobility of the ZnO film as compared to spray deposited ZnO film without electric field. This with large area deposition makes the process more efficient than other techniques.

  9. Design of Shallow p-type Dopants in ZnO (Presentation)

    SciTech Connect

    Wei, S.H.; Li, J.; Yan. Y.

    2008-05-01

    ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.

  10. Effect of gamma irradiation on DC electrical conductivity of ZnO nanoparticles

    SciTech Connect

    Swaroop, K.; Somashekarappa, H. M.; Naveen, C. S.; Jayanna, H. S.

    2015-06-24

    The temperature dependent dc electrical conductivity of gamma irradiated Zinc oxide (ZnO) nanoparticles is presented in this paper. The X-ray diffraction (XRD) pattern shows hexagonal wurtzite structure of ZnO. Fourier Transform Infrared Spectroscopy (FTIR) confirms Zn-O stretching vibrations. UV-Visible spectroscopy studies show that the energy band gap (E{sub g}) of the prepared ZnO nanoparticles increases with respect to gamma irradiation dose, which can be related to room temperature dc electrical conductivity. The result shows significant variation in the high temperature dc electrical conductivity of ZnO nanoparticles due to gamma irradiation.

  11. Effect of bath temperature on surface morphology and photocatalytic activity of ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Sriharan, N.; Muthukumarasamy, N.; Senthil, T. S.

    2016-05-01

    ZnO nanorods were prepared by using simple hydrothermal method using four different bath temperatures. All the prepared ZnO nanorods are annealed at 450°C and are characterized by using various techniques such as X-ray diffraction, UV spectra and scanning electron microscopy. Photocatalytic activity of the prepared ZnO nanorods is analyzed. A novel photocatalytic reactor designed with ZnO nanorods prepared at 90°C shows enhanced catalytic efficiency. The role of light irradiation time, bath temperature and surface morphology of the ZnO nanorods on the performance of photocatalytic reaction is analyzed.

  12. Characterization of the quality of ZnO thin films using reflective second harmonic generation

    SciTech Connect

    Huang, Y.-J.; Chu, S.-Y.; Lo, K.-Y.; Liu, C.-W.; Liu, C.-C.

    2009-08-31

    A polar mirror symmetrical contribution originated from the arrangement of grain boundaries existing in the ZnO film is detected by reflective second harmonic generation pattern. The ordering of ZnO grain boundary is dependent on the kinetic energy of deposited atoms and affects the quality of ZnO films. The net direction of the grain boundary in ZnO film trends toward the [110] direction of Si(111) to reach the minimum grain energy for better quality ZnO film. The polar structure of the mirrorlike boundaries under the optically macroscopic viewpoint presents a correlation with film quality.

  13. Resistive switching characteristics of a compact ZnO nanorod array grown directly on an Al-doped ZnO substrate

    NASA Astrophysics Data System (ADS)

    Yoo, E. J.; Shin, J. Y.; Yoon, T. S.; Kang, C. J.; Choi, Y. J.

    2016-07-01

    ZnO’s resistive switching properties have drawn much attention because ZnO has a simple chemical composition and is easy to manipulate. The propulsion mechanism for resistive switching in ZnO is based on a conducting filament that consists of oxygen vacancies. In the case of film structure, the random formation of the conducting filaments occasionally leads to unstable switching characteristics. Limiting the direction in which the conducting filaments are formed is one way to solve this problem. In this study, we demonstrate reliable resistive switching behavior in a device with an Au/compact ZnO nanorod array/Al-doped ZnO structure with stable resistive switching over 105 cycles and a long retention time of 104 s by confining conducting filaments along the boundaries between ZnO nanorods. The restrictive formation of conducting filaments along the boundaries between ZnO nanorods is observed directly using conductive atomic force microscopy.

  14. Mutagenicity of heavy metals

    SciTech Connect

    Wong, P.K. )

    1988-05-01

    Certain heavy metals are required, as trace elements for normal cellular functions. However, heavy metals are toxic to cells once their levels exceed their low physiological values. The toxicity of heavy metals on microorganisms, on plants and on animals has been well-documented. These interactions may induce the alteration of the primary as well as secondary structures of the DNA and result in mutation(s). Though the rec assay with Bacillus subtilis and the reversion assay with Escherichia coli were used to assess the mutagenicity of some heavy metals, the present communication reports the results in determining the mutagenicity and carcinogenicity of ten heavy metals commonly found in polluted areas by using the Salmonella/mammalian-microsome mutagenicity test.

  15. Photoluminescence of Sequential Infiltration Synthesized ZnO nanostructures

    NASA Astrophysics Data System (ADS)

    Ocola, Leonidas; Gosztola, David; Yanguas-Gil, Angel; Connolly, Aine

    We have investigated a variation of atomic layer deposition (ALD), called sequential infiltration synthesis (SiS), as an alternate method to incorporate ZnO and other oxides inside polymethylmethacrylate (PMMA) and other polymers. Energy dispersive spectroscopy (EDS) results show that we synthesize ZnO up to 300 nm inside a PMMA film. Photoluminescence data on a PMMA film shows that we achieve a factor of 400X increase in photoluminescence (PL) intensity when comparing a blank Si sample and a 270 nm thick PMMA film, where both were treated with the same 12 alternating cycles of H2O and diethyl zinc (DEZ). PMMA is a well-known ebeam resist. We can expose and develop patterns useful for photonics or sensing applications first, and then convert them afterwards into a hybrid polymer-oxide material. We show that patterning does indeed affect the photoluminescence signature of native ZnO. We demonstrate we can track the growth of the ZnO inside the PMMA polymer using both photoluminescence and Raman spectroscopy and determine the point in the process where ZnO is first photoluminescent and also at which point ZnO first exhibits long range order in the polymer. This work was supported by the Department of Energy under Contract No. DE-AC02-06CH11357. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  16. A high power ZnO thin film piezoelectric generator

    NASA Astrophysics Data System (ADS)

    Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

    2016-02-01

    A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

  17. Comparative study of ZnO nanorods and thin films for chemical and biosensing applications and the development of ZnO nanorods based potentiometric strontium ion sensor

    NASA Astrophysics Data System (ADS)

    Khun, K.; Ibupoto, Z. H.; Chey, C. O.; Lu, Jun.; Nur, O.; Willander, M.

    2013-03-01

    In this study, the comparative study of ZnO nanorods and ZnO thin films were performed regarding the chemical and biosensing properties and also ZnO nanorods based strontium ion sensor is proposed. ZnO nanorods were grown on gold coated glass substrates by the hydrothermal growth method and the ZnO thin films were deposited by electro deposition technique. ZnO nanorods and thin films were characterised by field emission electron microscopy [FESEM] and X-ray diffraction [XRD] techniques and this study has shown that the grown nanostructures are highly dense, uniform and exhibited good crystal quality. Moreover, transmission electron microscopy [TEM] was used to investigate the quality of ZnO thin film and we observed that ZnO thin film was comprised of nano clusters. ZnO nanorods and thin films were functionalised with selective strontium ionophore salicylaldehyde thiosemicarbazone [ST] membrane, galactose oxidase, and lactate oxidase for the detection of strontium ion, galactose and L-lactic acid, respectively. The electrochemical response of both ZnO nanorods and thin films sensor devices was measured by using the potentiometric method. The strontium ion sensor has exhibited good characteristics with a sensitivity of 28.65 ± 0.52 mV/decade, for a wide range of concentrations from 1.00 × 10-6 to 5.00 × 10-2 M, selectivity, reproducibility, stability and fast response time of 10.00 s. The proposed strontium ion sensor was used as indicator electrode in the potentiometric titration of strontium ion versus ethylenediamine tetra acetic acid [EDTA]. This comparative study has shown that ZnO nanorods possessed better performance with high sensitivity and low limit of detection due to high surface area to volume ratio as compared to the flat surface of ZnO thin films.

  18. Optical characterization of ZnO nanomaterial with praseodymium ions

    NASA Astrophysics Data System (ADS)

    Sharma, Y. K.; Pal, Sudha; Goyal, Priyanka; Bind, Umesh Chandra

    2016-05-01

    ZnO nanomaterial with praseodymium ions was prepared by chemical synthesis method. The ZnO nanomaterial was characterized by XRD, SEM and TEM. Their absorption in UV-VIS/NIR regions was measured at room temperature. The experimental oscillator strengths were calculated from the areas under the absorption bands. Eight absorption bands have been observed. From these spectral data various energy interaction parameters like Slater-Condon, Lande, Racah, Nephelauxetic ratio and bonding parameters have been computed. Judd-Ofelt analysis has been carried out using the absorption spectra to evaluate the radiative properties for luminescent levels of the praseodymium ion and discussed. The observed nano particle size is 2nm.

  19. Kinetics of Congruent Vaporization of ZnO Islands

    SciTech Connect

    Kim, B.J.; Stach, E.; Garcia, R.E.

    2011-09-28

    We examine the congruent vaporization of ZnO islands using in situ transmission electron microscopy. Correlating quantitative measurements with a theoretical model offers a comprehensive understanding of the equilibrium conditions of the system, including equilibrium vapor pressure and surface free energy. Interestingly, the surface energy depends on temperature, presumably due to a charged surface at our specific condition of low P and high T. We find that the vaporization temperature decreases with decreasing system size, a trend that is more pronounced at higher T. Applying our results of island decay towards the growth of the ZnO provides new insights into the cooperative facet growth of anisotropic nanocrystals.

  20. Improved Response of ZnO Films for Pyroelectric Devices

    PubMed Central

    Hsiao, Chun-Ching; Yu, Shih-Yuan

    2012-01-01

    Increasing the temperature variation rate is a useful method for enhancing the response of pyroelectric devices. A three-dimensional ZnO film was fabricated by the aerosol deposition (AD) rapid process using the shadow mask method, which induces lateral temperature gradients on the sidewalls of the responsive element, thereby increasing the temperature variation rate. To enhance the quality of the film and reduce the concentration of defects, the film was further treated by laser annealing, and the integration of a comb-like top electrode enhanced the voltage response and reduced the response time of the resulting ZnO pyroelectric devices. PMID:23235444

  1. Structure of graphene oxide dispersed with ZnO nanoparticles

    SciTech Connect

    Yadav, Rishikesh Pandey, Devendra K.; Khare, P. S.

    2014-10-15

    Graphene has been proposed as a promising two-dimensional nanomaterial with outstanding electronic, optical, thermal and mechanical properties for many applications. In present work a process of dispersion of graphene oxide with ZnO nanoparticles in ethanol solution with different pH values, have been studied. Samples have been characterized by XRD, SEM, PL, UV-visible spectroscopy and particles size measurement. The results analysis indicates overall improved emission spectrum. It has been observed that the average diameter of RGO (Reduced Graphene Oxide) decreases in presence of ZnO nanoparticles from 3.8μm to 0.41μm.

  2. Reducing ZnO nanoparticle cytotoxicity by surface modification

    NASA Astrophysics Data System (ADS)

    Luo, Mingdeng; Shen, Cenchao; Feltis, Bryce N.; Martin, Lisandra L.; Hughes, Anthony E.; Wright, Paul F. A.; Turney, Terence W.

    2014-05-01

    Nanoparticulate zinc oxide (ZnO) is one of the most widely used engineered nanomaterials and its toxicology has gained considerable recent attention. A key aspect for controlling biological interactions at the nanoscale is understanding the relevant nanoparticle surface chemistry. In this study, we have determined the disposition of ZnO nanoparticles within human immune cells by measurement of total Zn, as well as the proportions of extra- and intracellular dissolved Zn as a function of dose and surface coating. From this mass balance, the intracellular soluble Zn levels showed little difference in regard to dose above a certain minimal level or to different surface coatings. PEGylation of ZnO NPs reduced their cytotoxicity as a result of decreased cellular uptake arising from a minimal protein corona. We conclude that the key role of the surface properties of ZnO NPs in controlling cytotoxicity is to regulate cellular nanoparticle uptake rather than altering either intracellular or extracellular Zn dissolution.Nanoparticulate zinc oxide (ZnO) is one of the most widely used engineered nanomaterials and its toxicology has gained considerable recent attention. A key aspect for controlling biological interactions at the nanoscale is understanding the relevant nanoparticle surface chemistry. In this study, we have determined the disposition of ZnO nanoparticles within human immune cells by measurement of total Zn, as well as the proportions of extra- and intracellular dissolved Zn as a function of dose and surface coating. From this mass balance, the intracellular soluble Zn levels showed little difference in regard to dose above a certain minimal level or to different surface coatings. PEGylation of ZnO NPs reduced their cytotoxicity as a result of decreased cellular uptake arising from a minimal protein corona. We conclude that the key role of the surface properties of ZnO NPs in controlling cytotoxicity is to regulate cellular nanoparticle uptake rather than

  3. Nonvolatile resistive switching in single crystalline ZnO nanowires.

    PubMed

    Yang, Yuchao; Zhang, Xiaoxian; Gao, Min; Zeng, Fei; Zhou, Weiya; Xie, Sishen; Pan, Feng

    2011-04-01

    We demonstrate nonvolatile resistive switching in single crystalline ZnO nanowires with high ON/OFF ratios and low threshold voltages. Unlike the mechanism of continuous metal filament formation along grain boundaries in polycrystalline films, the resistive switching in single crystalline ZnO nanowires is speculated to be induced by the formation of a metal island chain on the nanowire surface. Resistive memories based on bottom-up semiconductor nanowires hold potential for next generation ultra-dense nonvolatile memories. PMID:21394361

  4. Growth modes of ZnO nanostructures from laser ablation

    SciTech Connect

    Amarilio-Burshtein, I.; Tamir, S.; Lifshitz, Y.

    2010-03-08

    ZnO nanowires (NWs) and other nanostructures were grown by laser ablation of a ZnO containing target onto different substrates with and without the presence of an Au catalyst. The morphology and structure of the NWs were studied using high resolution scanning and transmission electron microscopes [including imaging, selected area electron diffraction (SAED), and energy dispersive x-ray spectroscopy (EDS)]. The different growth modes obtainable could be tuned by varying the Zn concentration in the vapor phase keeping other growth parameters intact. Possible growth mechanisms of these nanowires are suggested and discussed.

  5. Electron-hole quantum physics in ZnO

    NASA Astrophysics Data System (ADS)

    Versteegh, M. A. M.

    2011-09-01

    This dissertation describes several new aspects of the quantum physics of electrons and holes in zinc oxide (ZnO), including a few possible applications. Zinc oxide is a II-VI semiconductor with a direct band gap in the ultraviolet. Experimental and theoretical studies have been performed, both on bulk ZnO and on ZnO nanowires. Chapter 2 presents a new technique for an ultrafast all-optical shutter, based on two-photon absorption in a ZnO crystal. This shutter can be used for luminescence experiments requiring extremely high time-resolution. Chapter 3 describes a time-resolved study on the electron-hole many-body effects in highly excited ZnO at room temperature, in particular band-filling, band-gap renormalization, and the disappearance of the exciton resonance due to screening. In Chapter 4, the quantum many-body theory developed and experimentally verified in Chapter 3, is used to explain laser action in ZnO nanowires, and compared with experimental results. In contrast to current opinion, the results indicate that excitons are not involved in the laser action. The measured emission wavelength, the laser threshold, and the spectral distance between the laser modes are shown to be excellently explained by our quantum many-body theory. Multiple scattering of light in a forest of nanowires can be employed to enhance light absorption in solar cells. Optimization of this technique requires better understanding of light diffusion in such a nanowire forest. In Chapter 5 we demonstrate a method, based on two-photon absorption, to directly measure the residence time of light in a nanowire forest, and we show that scanning electron microscope (SEM) images can be used to predict the photon mean free path. In Chapter 6 we present a new ultrafast all-optical transistor, consisting of a forest of ZnO nanowires. After excitation, laser action in this forest causes rapid recombination of the majority of the electrons and holes, limiting the amplification to 1.2 picoseconds only

  6. Single photon emission from ZnO nanoparticles

    SciTech Connect

    Choi, Sumin; Ton-That, Cuong; Phillips, Matthew R.; Aharonovich, Igor; Johnson, Brett C.; Castelletto, Stefania

    2014-06-30

    Room temperature single photon emitters are very important resources for photonics and emerging quantum technologies. In this work, we study single photon emission from defect centers in 20 nm zinc oxide (ZnO) nanoparticles. The emitters exhibit bright broadband fluorescence in the red spectral range centered at 640 nm with polarized excitation and emission. The studied emitters showed continuous blinking; however, bleaching can be suppressed using a polymethyl methacrylate coating. Furthermore, hydrogen termination increased the density of single photon emitters. Our results will contribute to the identification of quantum systems in ZnO.

  7. Growth modes of ZnO nanostructures from laser ablation

    NASA Astrophysics Data System (ADS)

    Amarilio-Burshtein, I.; Tamir, S.; Lifshitz, Y.

    2010-03-01

    ZnO nanowires (NWs) and other nanostructures were grown by laser ablation of a ZnO containing target onto different substrates with and without the presence of an Au catalyst. The morphology and structure of the NWs were studied using high resolution scanning and transmission electron microscopes [including imaging, selected area electron diffraction (SAED), and energy dispersive x-ray spectroscopy (EDS)]. The different growth modes obtainable could be tuned by varying the Zn concentration in the vapor phase keeping other growth parameters intact. Possible growth mechanisms of these nanowires are suggested and discussed.

  8. Light Confinement-Induced Antireflection of ZnO Nanocones

    SciTech Connect

    Lee, Sang Hyun; Jellison Jr, Gerald Earle; Duty, Chad E; Xu, Jun

    2011-01-01

    The antireflective features of aperiodic vertical aligned ZnO nanocones on Si wafer were studied both experimentally and theoretically through comparison with planar ZnO films on Si substrates and bare Si substrates. The measured diffuse reflectance spectra show that the nanocone-based texture reduces the light reflection in a broad spectral range, and is much more effective than the planar textures. The numerical simulations exhibit a good agreement with the experimental data and suggest that the light confinement inside nanocones by controlling the diameters can bring further improvement of light absorption into Si.

  9. Noise in ZnO nanowire field effect transistors.

    PubMed

    Xiong, Hao D; Wang, Wenyong; Suehle, John S; Richter, Curt A; Hong, Woong-Ki; Lee, Takhee

    2009-02-01

    The noise power spectra in ZnO nanowire field effect transistors (FETs) were experimentally investigated and showed a classical 1/f dependence. A Hooge's constant of 5 x 10(-3) was estimated. This value is within the range reported for CMOS FETs with high-k dielectrics, supporting the concept that nanowires can be utilized for future beyond-CMOS electronic applications from the point of view of device noise properties. ZnO FETs measured in a dry O2 environment displayed elevated noise levels compared to in vacuum. At low temperature, random telegraph signals are observed in the drain current. PMID:19441450

  10. Tunable Lattice Constant and Band Gap of Single- and Few-Layer ZnO.

    PubMed

    Lee, Junseok; Sorescu, Dan C; Deng, Xingyi

    2016-04-01

    Single and few-layer ZnO(0001) (ZnO(nL), n = 1-4) grown on Au(111) have been characterized via scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and density functional theory (DFT) calculations. We find that the in-plane lattice constants of the ZnO(nL, n ≤ 3) are expanded compared to that of the bulk wurtzite ZnO(0001). The lattice constant reaches a maximum expansion of 3% in the ZnO(2L) and decreases to the bulk wurtzite ZnO value in the ZnO(4L). The band gap decreases monotonically with increasing number of ZnO layers from 4.48 eV (ZnO(1L)) to 3.42 eV (ZnO(4L)). These results suggest that a transition from a planar to the bulk-like ZnO structure occurs around the thickness of ZnO(4L). The work also demonstrates that the lattice constant and the band gap in ultrathin ZnO can be tuned by controlling the number of layers, providing a basis for further investigation of this material. PMID:27003692

  11. Control of optical and electrical properties of ZnO nanocrystals by nanosecond-laser annealing

    NASA Astrophysics Data System (ADS)

    Shimogaki, T.; Ofuji, T.; Tetsuyama, N.; Kawahara, H.; Higashihata, M.; Ikenoue, H.; Nakamura, D.; Okada, T.

    2014-03-01

    Effects of laser annealing on electrical and optical properties of Zinc oxide (ZnO) nanocrystals, which are expected as building blocks for optoelectronic devices, have been investigated in this study. In the case of fabricating p-n junction in single one-dimensional ZnO nanocrystal, phosphorus-ions implanted p-type ZnO nanocrystals were recrystallized and recovered in the optical properties by nanosecond-laser annealing using a KrF excimer laser. Antimony-doped p-type ZnO nanocrystals were synthesized by irradiating laminated structure which antimony thin film were deposited on ZnO nanocrystals with the laser beam. Additionally, it is possible to control the growth rate of ZnO nanowires by using laser annealing. Irradiating with pulsed laser a part of ZnO buffer layer deposited on the a-cut sapphire substrate, then ZnO nanowires were grown on the ZnO buffer layer by the nanoparticle assisted pulsed laser deposition method. As a result, the clear boundary of the laser annealed and non-laser annealed area was appeared. It was observed that ZnO nanowires were grown densely at non-laser annealed area, on the other hand, sparse ones were grown at the laser-annealed region. In this report, the possibility of laser annealing techniques to establish the stable and reliable fabrication process of ZnO nanowires-based LD and LED are discussed on the basis of experimental results.

  12. Tunable Surface Wettability of ZnO Nanoparticle Arrays for Controlling the Alignment of Liquid Crystals.

    PubMed

    Chung, Yueh-Feng; Chen, Mu-Zhe; Yang, Sheng-Hsiung; Jeng, Shie-Chang

    2015-05-13

    The control of the liquid crystal (LC) alignment is very important for both academic research and practical applications. LC molecules aligned on the ZnO nanoparticle arrays (ZnO NPAs) are demonstrated and the pretilt angles of LCs can be controlled by using ZnO NPAs with different surface wettability. The wettability of ZnO NPAs fabricated by the solution-based hydrothermal method can be controlled by changing the annealing temperature of the as-prepared ZnO NPAs. The measurements of the energy-dispersive spectra and photoluminescence have shown that the chemical properties of ZnO NPAs have been changed with the annealing temperature. Our results show that the pretilt angle of LCs can be tuned continuously from ∼0 to ∼90° as the contact angle of water on ZnO NPAs changes from 33 to 108°. PMID:25895105

  13. Fluorescence property of ZnO nanoparticles and the interaction with bromothymol blue.

    PubMed

    Yue, Qiaoli; Cheng, Jinmei; Li, Guang; Zhang, Ke; Zhai, Yanling; Wang, Lei; Liu, Jifeng

    2011-05-01

    We synthesized ZnO quantum dots (QDs) simply in alcoholic solution, and investigated the interaction between ZnO QDs and bromothymol blue. The structural, morphological, size and spectral properties of ZnO QDs were studied. It was found that ZnO QDs were spherical nanoparticles in the crystal structure, and the average diameter of ZnO QDs was about 4.8 nm. The excitation and emission peaks were located at 346 nm and 520 nm, respectively, which were obtained on a common fluorophotometer. The quantum yield of ZnO QDs was obtained by using quinine sulfate as a reference reagent. In addition, the fluorescence of ZnO QDs can be quenched by bromothymol blue, and the quenching mechanism was proposed in a dynamic quenching mode. PMID:21170671

  14. Opto-electrical properties of Sb-doped p-type ZnO nanowires

    SciTech Connect

    Kao, Tzu-Hsuan; Chen, Jui-Yuan; Chiu, Chung-Hua; Huang, Chun-Wei; Wu, Wen-Wei

    2014-03-17

    P-type ZnO nanowires (NWs) have attracted much attention in the past years due to the potential applications for optoelectronics and piezotronics. In this study, we have synthesized Sb-doped p-type ZnO NWs on Si (100) substrates by chemical vapor deposition with Aucatalyst. The Sb-doped ZnO NWs are single crystalline with high density, grown along [1-1-2] direction. The doping percentage of Sb is about 2.49%, which has been confirmed by X-ray photoelectron spectroscopy. The ZnO NW field effect transistor demonstrated its p-type characteristics. A high responsivity to ultraviolet photodetection was also observed. In addition, compared to intrinsic ZnO NWs, the conductivity of the Sb-doped ZnO NWs exhibited ∼2 orders of magnitude higher. These properties make the p-type ZnO NWs a promising candidate for electronic and optoelectronic devices.

  15. Built-in electric field in ZnO based semipolar quantum wells grown on (1012) ZnO substrates

    SciTech Connect

    Chauveau, J.-M.; Xia, Y.; Roland, B.; Vinter, B.; University of Nice Sophia Antipolis, Parc Valrose, F-06102 Nice Cedex 2 ; Ben Taazaet-Belgacem, I.; Teisseire, M.; Nemoz, M.; Brault, J.; Damilano, B.; Leroux, M.

    2013-12-23

    We report on the properties of semipolar (Zn,Mg)O/ZnO quantum wells homoepitaxially grown by molecular beam epitaxy on (1012) R-plane ZnO substrates. We demonstrate that atomically flat interfaces can be achieved with fully relaxed quantum wells because the mismatch between (Zn,Mg)O and ZnO is minimal for this growth orientation. The photoluminescence properties evidence a quantum confined Stark effect with an internal electric field estimated to 430 kV/cm for a 17% Mg content in the barriers. The quantum well emission is strongly polarized along the 1210 direction and a comparison with the semipolar bulk ZnO luminescence polarization points to the effect of the confinement.

  16. Dynamics of ZnO nanoparticles formed in the high-pressure phase during growth of ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Nakamura, D.; Shimogaki, T.; Takao, S.; Nakao, S.; Harada, K.; Higashihata, M.; Okada, T.

    2015-03-01

    The dynamics of zinc oxide (ZnO) nanoparticles formed in Ar gas of 200 Torr by laser ablation are visualized by ultraviolet Rayleigh scattering imaging. The time-resolved imaging of the ZnO nanoparticles are presented for several conditions of single-pulse ablation and 10 Hz ablation at room temperature. Scattering light from the nanoparticles appeared at 1-2 ms after ablation, and the spatial distribution was a mushroom like swirling cloud. The cloud propagates forward about 2.6 m/s without lateral expansion. In addition, nanoparticle distribution at a substrate heating condition, which is growth condition of ZnO nanocrystals is investigated. The nanoparticles under heating condition formed almost the same spatial distribution as that of room temperature and their speed was increased to 3.2 m/s at 750 °C.

  17. Study of ZnO and Mg doped ZnO nanoparticles by sol-gel process

    SciTech Connect

    Ansari, Mohd Meenhaz Arshad, Mohd; Tripathi, Pushpendra

    2015-06-24

    Nano-crystalline undoped and Mg doped ZnO (Mg-ZnO) nanoparticles with compositional formula Mg{sub x}Zn{sub 1-x}O (x=0,1,3,5,7,10 and 12 %) were synthesized using sol-gel process. The XRD diffraction peaks match with the pattern of the standard hexagonal structure of ZnO that reveals the formation of hexagonal wurtzite structure in all samples. SEM images demonstrates clearly the formation of spherical ZnO nanoparticles, and change of the morphology of the nanoparticles with the concentration of the magnesium, which is in close agreement with that estimated by Scherer formula based on the XRD pattern. To investigate the doping effect on optical properties, the UV–VIS absorption spectra was obtained and the band gap of the samples calculated.

  18. In vitro antibacterial activity of ZnO and Nd doped ZnO nanoparticles against ESBL producing Escherichia coli and Klebsiella pneumoniae.

    PubMed

    Hameed, Abdulrahman Syedahamed Haja; Karthikeyan, Chandrasekaran; Ahamed, Abdulazees Parveez; Thajuddin, Nooruddin; Alharbi, Naiyf S; Alharbi, Sulaiman Ali; Ravi, Ganasan

    2016-01-01

    Pure ZnO and Neodymium (Nd) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure. From FESEM studies, ZnO and Nd doped ZnO NPs showed nanorod and nanoflower like morphology respectively. The FT-IR spectra confirmed the Zn-O stretching bands at 422 and 451 cm(-1) for ZnO and Nd doped ZnO NPs respectively. From the UV-VIS spectroscopic measurement, the excitonic peaks were found around 373 nm and 380 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of ten different bands due to zinc vacancies, oxygen vacancies and surface defects. The antibacterial studies performed against extended spectrum β-lactamases (ESBLs) producing strains of Escherichia coli and Klebsiella pneumoniae showed that the Nd doped ZnO NPs possessed a greater antibacterial effect than the pure ZnO NPs. From confocal laser scanning microscopic (CLSM) analysis, the apoptotic nature of the cells was confirmed by the cell shrinkage, disorganization of cell wall and cell membrane and dead cell of the bacteria. SEM analysis revealed the existence of bacterial loss of viability due to an impairment of cell membrane integrity, which was highly consistent with the damage of cell walls. PMID:27071382

  19. In vitro antibacterial activity of ZnO and Nd doped ZnO nanoparticles against ESBL producing Escherichia coli and Klebsiella pneumoniae

    NASA Astrophysics Data System (ADS)

    Hameed, Abdulrahman Syedahamed Haja; Karthikeyan, Chandrasekaran; Ahamed, Abdulazees Parveez; Thajuddin, Nooruddin; Alharbi, Naiyf S.; Alharbi, Sulaiman Ali; Ravi, Ganasan

    2016-04-01

    Pure ZnO and Neodymium (Nd) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure. From FESEM studies, ZnO and Nd doped ZnO NPs showed nanorod and nanoflower like morphology respectively. The FT-IR spectra confirmed the Zn-O stretching bands at 422 and 451 cm‑1 for ZnO and Nd doped ZnO NPs respectively. From the UV-VIS spectroscopic measurement, the excitonic peaks were found around 373 nm and 380 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of ten different bands due to zinc vacancies, oxygen vacancies and surface defects. The antibacterial studies performed against extended spectrum β-lactamases (ESBLs) producing strains of Escherichia coli and Klebsiella pneumoniae showed that the Nd doped ZnO NPs possessed a greater antibacterial effect than the pure ZnO NPs. From confocal laser scanning microscopic (CLSM) analysis, the apoptotic nature of the cells was confirmed by the cell shrinkage, disorganization of cell wall and cell membrane and dead cell of the bacteria. SEM analysis revealed the existence of bacterial loss of viability due to an impairment of cell membrane integrity, which was highly consistent with the damage of cell walls.

  20. In vitro antibacterial activity of ZnO and Nd doped ZnO nanoparticles against ESBL producing Escherichia coli and Klebsiella pneumoniae

    PubMed Central

    Hameed, Abdulrahman Syedahamed Haja; Karthikeyan, Chandrasekaran; Ahamed, Abdulazees Parveez; Thajuddin, Nooruddin; Alharbi, Naiyf S.; Alharbi, Sulaiman Ali; Ravi, Ganasan

    2016-01-01

    Pure ZnO and Neodymium (Nd) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure. From FESEM studies, ZnO and Nd doped ZnO NPs showed nanorod and nanoflower like morphology respectively. The FT-IR spectra confirmed the Zn-O stretching bands at 422 and 451 cm−1 for ZnO and Nd doped ZnO NPs respectively. From the UV-VIS spectroscopic measurement, the excitonic peaks were found around 373 nm and 380 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of ten different bands due to zinc vacancies, oxygen vacancies and surface defects. The antibacterial studies performed against extended spectrum β-lactamases (ESBLs) producing strains of Escherichia coli and Klebsiella pneumoniae showed that the Nd doped ZnO NPs possessed a greater antibacterial effect than the pure ZnO NPs. From confocal laser scanning microscopic (CLSM) analysis, the apoptotic nature of the cells was confirmed by the cell shrinkage, disorganization of cell wall and cell membrane and dead cell of the bacteria. SEM analysis revealed the existence of bacterial loss of viability due to an impairment of cell membrane integrity, which was highly consistent with the damage of cell walls. PMID:27071382

  1. Heavy-ion dosimetry

    SciTech Connect

    Schimmerling, W.

    1980-03-01

    This lecture deals with some of the more important physical characteristics of relativistic heavy ions and their measurement, with beam delivery and beam monitoring, and with conventional radiation dosimetry as used in the operation of the BEVALAC biomedical facility for high energy heavy ions (Lyman and Howard, 1977; BEVALAC, 1977). Even so, many fundamental aspects of the interaction of relativistic heavy ions with matter, including important atomic physics and radiation chemical considerations, are not discussed beyond the reminder that such additional understanding is required before an adequte perspective of the problem can be attained.

  2. Self-focused ZnO transducers for ultrasonic biomicroscopy

    PubMed Central

    Cannata, J. M.; Williams, J. A.; Zhou, Q. F.; Sun, L.; Shung, K. K.; Yu, H.; Kim, E. S.

    2008-01-01

    A simple fabrication technique was developed to produce high frequency (100 MHz) self-focused single element transducers with sputtered zinc oxide (ZnO) crystal films. This technique requires the sputtering of a ZnO film directly onto a curved backing substrate. Transducers were fabricated by sputtering an 18 μm thick ZnO layer on 2 mm diameter aluminum rods with ends shaped and polished to produce a 2 mm focus or f-number equal to one. The aluminum rod served a dual purpose as the backing layer and positive electrode for the resultant transducers. A 4 μm Parylene matching layer was deposited on the transducers after housing and interconnect. This matching layer was used to protect the substrate and condition the transfer of acoustic energy between the ZnO film and the load medium. The pulse-echo response for a representative transducer was centered at 101 MHz with a -6 dB bandwidth of 49%. The measured two way insertion loss was 44 dB. A tungsten wire phantom and an adult zebrafish eye were imaged to show the capability of these transducers. PMID:18596925

  3. Ecotoxicity of Manufactured ZnO Nanoparticles - A Review

    EPA Science Inventory

    This report presents an exhaustive literature review on the toxicity of manufactured ZnO nanoparticles (NPs) to ecological receptors across different phylum: bacteria, algae and plants, aquatic and terrestrial invertebrates and freshwater fish. Results show that the majority of s...

  4. Co doped ZnO nanowires as visible light photocatalysts

    NASA Astrophysics Data System (ADS)

    Šutka, Andris; Käämbre, Tanel; Pärna, Rainer; Juhnevica, Inna; Maiorov, Mihael; Joost, Urmas; Kisand, Vambola

    2016-06-01

    High aspect ratio cobalt doped ZnO nanowires showing strong photocatalytic activity and moderate ferromagnetic behaviour were successfully synthesized using a solvothermal method and characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), vibrating sample magnetometry (VSM) and UV-visible absorption spectroscopy. The photocatalytic activities evaluated for visible light driven degradation of an aqueous methylene orange (MO) solution were higher than for Co doped ZnO nanoparticles at the same doping level and synthesized by the same synthesis route. The rate constant for MO visible light photocatalytic degradation was 1.9·10-3 min-1 in case of nanoparticles and 4.2·10-3 min-1 in case of nanowires. We observe strongly enhanced visible light photocatalytic activity for moderate Co doping levels, with an optimum at a composition of Zn0.95Co0.05O. The enhanced photocatalytic activities of Co doped ZnO nanowires were attributed to the combined effects of enhanced visible light absorption at the Co sites in ZnO nanowires, and improved separation efficiency of photogenerated charge carriers at optimal Co doping.

  5. Photoluminescence of spray pyrolysis deposited ZnO nanorods

    PubMed Central

    2011-01-01

    Photoluminescence of highly structured ZnO layers comprising well-shaped hexagonal rods is presented. The ZnO rods (length 500-1,000 nm, diameter 100-300 nm) were grown in air onto a preheated soda-lime glass (SGL) or ITO/SGL substrate by low-cost chemical spray pyrolysis method using zinc chloride precursor solutions and growth temperatures in the range of 450-550°C. We report the effect of the variation in deposition parameters (substrate type, growth temperature, spray rate, solvent type) on the photoluminescence properties of the spray-deposited ZnO nanorods. A dominant near band edge (NBE) emission is observed at 300 K and at 10 K. High-resolution photoluminescence measurements at 10 K reveal fine structure of the NBE band with the dominant peaks related to the bound exciton transitions. It is found that all studied technological parameters affect the excitonic photoluminescence in ZnO nanorods. PACS: 78.55.Et, 81.15.Rs, 61.46.Km PMID:21711895

  6. Perovskite enhanced solid state ZnO solar cells

    NASA Astrophysics Data System (ADS)

    Loh, L.; Briscoe, J.; Dunn, S.

    2013-12-01

    This paper will report on the design, fabrication and testing of a solid-state perovskite enhanced ZnO solar cell. The p-type perovskite material used is bismuth ferrite (BFO) which has an absorption range within the blue range of the visible light spectrum. The solid state solar cell, was sensitized with N719 dye and used a CuSCN hole conductor. A disadvantage of ZnO is its poor chemical stability in acidic and corrosive environments. As chemical solution techniques were used in depositing BFO, a buffer method using an aminosilane ((3-aminopropyltrimethoxysilane or H2N(CH2)3Si(OCH3)3)) coating was used to provide a protective coating on the ZnO nanorods before the BFO film was spin coated onto the ZnO nanorods. The photovoltaic performance of the solar cells were tested using a Keithley 2400 source meter under 100mW/cm2, AM 1.5G simulated sunlight, where improvements in Jsc and efficiency were observed. The BFO was able to harness more electrons and also acted as a buffer from electron recombination.

  7. Self-focused ZnO transducers for ultrasonic biomicroscopy

    SciTech Connect

    Cannata, J. M.; Williams, J. A.; Zhou, Q. F.; Sun, L.; Shung, K. K.; Yu, H.; Kim, E. S.

    2008-04-15

    A simple fabrication technique was developed to produce high frequency (100 MHz) self-focused single element transducers with sputtered zinc oxide (ZnO) crystal films. This technique requires the sputtering of a ZnO film directly onto a curved backing substrate. Transducers were fabricated by sputtering an 18 {mu}m thick ZnO layer on 2 mm diameter aluminum rods with ends shaped and polished to produce a 2 mm focus or f-number equal to one. The aluminum rod served a dual purpose as the backing layer and positive electrode for the resultant transducers. A 4 {mu}m Parylene matching layer was deposited on the transducers after housing and interconnect. This matching layer was used to protect the substrate and condition the transfer of acoustic energy between the ZnO film and the load medium. The pulse-echo response for a representative transducer was centered at 101 MHz with a -6 dB bandwidth of 49%. The measured two way insertion loss was 44 dB. A tungsten wire phantom and an adult zebrafish eye were imaged to show the capability of these transducers.

  8. Ferromagnetism in Co- and Mn-doped ZnO

    NASA Astrophysics Data System (ADS)

    Theodoropoulou, N. A.; Hebard, A. F.; Norton, D. P.; Budai, J. D.; Boatner, L. A.; Lee, J. S.; Khim, Z. G.; Park, Y. D.; Overberg, M. E.; Pearton, S. J.; Wilson, R. G.

    2003-12-01

    Bulk single crystals of Sn-doped ZnO were implanted with Co or Mn at doses designed to produce transition metal concentrations of 3-5 at.% in the near-surface (˜2000 Å) region. The implantation was performed at ˜350 °C to promote dynamic annealing of ion-induced damage. Following annealing at 700 °C, temperature-dependent magnetization measurements showed ordering temperatures of ˜300 K for Co- and ˜250 K for Mn-implanted ZnO. Clear hysteresis loops were obtained at these temperatures. The coercive fields were ⩽100 Oe for all measurement temperatures. X-ray diffraction showed no detectable second phases in the Mn-implanted material. One plausible origin for the ferromagnetism in this case is a carrier-induced mechanism. By sharp contrast, the Co-implanted material showed evidence for the presence of Co precipitates with hexagonal symmetry, which is the cause of the room temperature ferromagnetism. Our results are consistent with the stabilization of ferromagnetic states by electron doping in transition metal-doped ZnO predicted by Sato and Katayama-Yoshida [Jpn. J. Appl. Phys. 40 (2001) L334]. This work shows the excellent promise of Mn-doped ZnO for potential room temperature spintronic applications.

  9. ZnO nanowire-based CO sensor

    NASA Astrophysics Data System (ADS)

    Ho, Mon-Shu; Chen, Wei-Hao; Chen, Yu-Lin; Chang, Meng-Fan

    This study applied ZnO nanowires to the fabrication of a CO gas sensor operable at room temperature. Following the deposition of a seed layer by spin coating, an aqueous solution method was used to grow ZnO nanowires. This was followed by the self-assembly of an electrode array via dielectrophoresis prior to the fabrication of the CO sensing device. The material characteristics were analyzed using FE-SEM, EDS, GIXRD, FE-TEM, and the measurement of photoluminescence (PL). Our results identified the ZnO nanowires as a single crystalline wurtzite structure. Extending the growth period from 30 min to 360 min led to an increase in the length and diameter of the nanowires. After two hours, the ZnO presented a preferred crystal orientation of [002]. Sensor chips were assembled using 60 pairs of electrodes with gaps of 2 μm, over which were lain nanowires to complete the sensing devices. The average sensing response was 48.37 s and the average recovery time was 65.61 s, with a sensing response magnitude of approximately 6.8% at room temperature.

  10. Memristive switching of ZnO nanorod mesh

    NASA Astrophysics Data System (ADS)

    Yevgeniy, Puzyrev; Shen, Xiao; Ni, Kai; Zhang, Xuan; Hachtel, Jordan; Choi, Bo; Chisholm, Matthew; Fleetwood, Daniel; Schrimpf, Ronald; Pantelides, Sokrates

    We present a combined experimental and theoretical study of memristive switching in a self-assembled mesh of ZnO nanorods. A ZnO nanorod mesh spans the area between Ag contacts in a device that exhibits hysteresis with large ON/OFF ratio, reaching ION/IOFF values of 104. We show that switching behavior depends critically on the geometry of the nanorod mesh. We employ density functional theory (DFT) calculations to deduce the mechanism for resistive switching for the nanorod mesh. Redistribution of Ag atoms, driven by an electrical field, leads to the formation and evolution of a conducting path through nanorods. Field-induced migration of Ag atoms changes the doping level of nanorods and modulates their conductivity. Using static DFT and nudged-elastic-band calculations, we investigate the energy of interaction between Ag clusters and a ZnO surface, including migration barriers of Ag atoms. Current-voltage (I-V) characteristics are modeled using percolation theory in a nanorod mesh. To describe the dynamics of SET/RESET phenomena, model parameters include the experimentally observed nanorod geometry and the energetics of Ag on ZnO surfaces, obtained from DFT calculations. This work was supported by NSF Grant DMR-1207241, DOE Grant DE-FG02-09ER46554, and the McMinn Endowment at Vanderbilt University. Computational support was provided by the NSF XSEDE under Grant #DMR TG-DMR130121.

  11. Growth of ZnO and GaN Films

    NASA Astrophysics Data System (ADS)

    Chang, J.; Hong, S.-K.; Matsumoto, K.; Tokunaga, H.; Tachibana, A.; Lee, S. W.; Cho, M.-W.

    . Zinc oxide (ZnO) and gallium nitride (GaN) are wide bandgap semi conductors applicable to light emitting diodes (LEDs) and laser diodes (LDs) with wavelengths ranging from ultraviolet to blue light. Now ZnO and GaN are key ma terials for optoelectronic device applications and their applications are being rapidly expanded to lots of other technology including electronics, biotechnology, nanotech-nology, and fusion technology among all these. As a fundamental starting point for the development of this new technique, epitaxy of ZnO and GaN films is one of the most important key technology. Hence, development of the growth technique for high quality epitaxial films is highly necessary. Among the various kinds of epi taxy technique for semiconductor films developed so far, physical vapor deposition (PVD)-based epitaxy technique has been revealed to be the appropriate way for the high quality ZnO film and related alloy growths, while chemical vapor deposition (CVD)-based epitaxy technique has been proved to be the best method for the high quality GaN film and related alloy growths.

  12. ZnO Nanostructure-Based Intracellular Sensor.

    PubMed

    Asif, Muhammad H; Danielsson, Bengt; Willander, Magnus

    2015-01-01

    Recently ZnO has attracted much interest because of its usefulness for intracellular measurements of biochemical species by using its semiconducting, electrochemical, catalytic properties and for being biosafe and biocompatible. ZnO thus has a wide range of applications in optoelectronics, intracellular nanosensors, transducers, energy conversion and medical sciences. This review relates specifically to intracellular electrochemical (glucose and free metal ion) biosensors based on functionalized zinc oxide nanowires/nanorods. For intracellular measurements, the ZnO nanowires/nanorods were grown on the tip of a borosilicate glass capillary (0.7 µm in diameter) and functionalized with membranes or enzymes to produce intracellular selective metal ion or glucose sensors. Successful intracellular measurements were carried out using ZnO nanowires/nanorods grown on small tips for glucose and free metal ions using two types of cells, human fat cells and frog oocytes. The sensors in this study were used to detect real-time changes of metal ions and glucose across human fat cells and frog cells using changes in the electrochemical potential at the interface of the intracellular micro-environment. Such devices are helpful in explaining various intracellular processes involving ions and glucose. PMID:26007730

  13. Synthesis of ZnO flowers and their photoluminescence properties

    SciTech Connect

    Wu Changle; Qiao Xueliang Luo Langli; Li Haijun

    2008-07-01

    Flower-like ZnO nano/microstructures have been synthesized by thermal treatment of Zn(NH{sub 3}){sub 4}{sup 2+} precursor in aqueous solvent, using ammonia as the structure directing agent. A number of techniques, including X-ray diffraction (XRD), field emission scan electron microscopy (FESEM), transmission electron microscopy (TEM), thermal analysis, and photoluminescence (PL) were used to characterize the obtained ZnO structures. The photoluminescence (PL) measurements indicated that the as-synthesized ZnO structures showed UV ({approx}375 nm), blue ({approx}465 nm), and yellow ({approx}585 nm) emission bands when they were excited by a He-Gd laser using 320 nm as the excitation source. Furthermore, it has been interestingly found that the intensity of light emission at {approx}585 nm remarkably decreased when the obtained ZnO nanocrystals were annealed at 600 deg. C for 3 h in air. The reason might be the possible oxygen vacancies and interstitials in the sample decreased at high temperature.

  14. ZnO for photocatalytic air purification applications

    NASA Astrophysics Data System (ADS)

    Tudose, I. V.; Suchea, M.

    2016-06-01

    Nano and micro-structured ZnO coatings onto various substrates were grown by chemical methods and optimized with respect to their photocatalytic activity against in-doors common air pollutants. Excellent quality coatings with high stability and photocatalytic efficiency were obtained with the scope to be integrated in a novel air-purification system.

  15. Growth Kinetics and Modeling of ZnO Nanoparticles

    ERIC Educational Resources Information Center

    Hale, Penny S.; Maddox, Leone M.; Shapter, Joe G.; Voelcker, Nico H.; Ford, Michael J.; Waclawik, Eric R.

    2005-01-01

    The technique for producing quantum-sized zinc oxide (ZnO) particles is much safer than a technique that used hydrogen sulfide gas to produce cadmium sulfide and zinc sulfide nanoparticles. A further advantage of this method is the ability to sample the solution over time and hence determine the growth kinetics.

  16. Piezotronically modified double Schottky barriers in ZnO varistors.

    PubMed

    Raidl, Nadine; Supancic, Peter; Danzer, Robert; Hofstätter, Michael

    2015-03-25

    Double Schottky barriers in ZnO are modified piezotronically by the application of mechanical stresses. New effects such as the enhancement of the potential barrier height and the increase or decrease of the natural barrier asymmetry are presented. Also, an extended model for the piezotronic modification of double Schottky barriers is given. PMID:25655302

  17. Aerogel tempelated ZnO dye-sensitized solar cells.

    SciTech Connect

    Hamann, T. W.; Martinson , A. B. E.; Elam, J. W.; Pellin, M. J.; Hupp, J. T.; Materials Science Division; Northwestern Univ.

    2008-01-01

    Atomic layer deposition is employed to conformally coat low density, high surface area aerogel films with ZnO. The ZnO/aerogel membranes are incorporated as photoanodes in dye-sensitized solar cells, which exhibit excellent power efficiencies of up to 2.4% under 100 mW cm{sup -2} light intensity.

  18. Photoluminescence of He-implanted ZnO

    SciTech Connect

    Hamby, D. W.; Lucca, D. A.; Lee, J.-K.; Nastasi, Michael Anthony,

    2004-01-01

    A study of the effects of ion-implanted He{sup +} on the 4.2 K photoluminescence (PL) of ZnO is presented. This investigation is motivated by the need to further understand the effects of damage resulting from the implantation process on the PL of ZnO. For this study, 10 keV He{sup +} ions were implanted at a dose of 2.5 x 10{sup 13}/cm{sup 2} in the (0001) Zn-terminated surface. The implantation process is seen to reduce the overall luminescence efficiency, although the number and relative intensities of the bound-exciton peaks are observed to be similar to that of unimplanted ZnO. The 4.2 K PL of the implanted surface exhibits a broad orange/red peak near 1.86 eV nm and is attributed to damage introduced during the implantation process. This peak is identified as donor-acceptor pair (DAP) luminescence with a thermal activation energy of 11 meV. The 1.86 eV peak is not observed for H-implanted ZnO suggesting that H passivates the implantation-induced defects responsible for this luminescence.

  19. Rapid synthesis of flower-like ZnO nanostructures.

    PubMed

    Movahedi, Maryam; Mahjoub, Ali Reza; Yavari, Issa; Kowsari, Elaheh

    2010-09-01

    Flower-like ZnO nanostructures were prepared via microwave assisted heating in the presence and absence of ionic liquid (IL). X-ray diffraction analysis (XRD), Scanning electron microscopy SEM and room temperature photoluminescence (PL) spectra have been employed for characterization of the products. The SEM image illustrates the surface of flower-like ZnO prepared in the presence of IL is not smooth and consists of nanoparticles with grain size of about 48 nm. PL spectra of flower-like ZnO in absence and presence IL reveal similar photoluminescence features: a strong UV, weak blue and green-yellow emissions peak at a bout 393 nm, 448 nm and 583 nm respectively. The strong UV photoluminescence and the weak green emission indicate the good crystallization quality of the flower-like nanostructure. The results show that imidazolium-based IL can be used as template for achieving very high level control over the size and shape of nanostructures. The approach developed in this work can potentially be used as a viable method for making various other uniform nanostructures in the presence of IL. This method is simple, fast, low-cost and suitable for large-scale production of ZnO nanostructures. PMID:21133168

  20. ZnO Nanostructure-Based Intracellular Sensor

    PubMed Central

    Asif, Muhammad H.; Danielsson, Bengt; Willander, Magnus

    2015-01-01

    Recently ZnO has attracted much interest because of its usefulness for intracellular measurements of biochemical species by using its semiconducting, electrochemical, catalytic properties and for being biosafe and biocompatible. ZnO thus has a wide range of applications in optoelectronics, intracellular nanosensors, transducers, energy conversion and medical sciences. This review relates specifically to intracellular electrochemical (glucose and free metal ion) biosensors based on functionalized zinc oxide nanowires/nanorods. For intracellular measurements, the ZnO nanowires/nanorods were grown on the tip of a borosilicate glass capillary (0.7 µm in diameter) and functionalized with membranes or enzymes to produce intracellular selective metal ion or glucose sensors. Successful intracellular measurements were carried out using ZnO nanowires/nanorods grown on small tips for glucose and free metal ions using two types of cells, human fat cells and frog oocytes. The sensors in this study were used to detect real-time changes of metal ions and glucose across human fat cells and frog cells using changes in the electrochemical potential at the interface of the intracellular micro-environment. Such devices are helpful in explaining various intracellular processes involving ions and glucose. PMID:26007730

  1. Characterization of heavy metal particles embedded in tire dust.

    PubMed

    Adachi, Kouji; Tainosho, Yoshiaki

    2004-10-01

    Tire dust is a significant pollutant, especially as a source of zinc in the urban environment. This study characterizes the morphology and chemical composition of heavy metal particles embedded in tire dust and traffic-related materials (brake dust, yellow paint, and tire tread) as measured by a field emission scanning electron microscope equipped with an energy dispersive X-ray spectrometer (FESEM/EDX). In 60 samples of tire dust, we detected 2288 heavy metal particles, which we classified into four groups using cluster analysis according to the following typical elements: cluster 1: Fe, cluster 2: Cr/Pb, cluster 3: multiple elements (Ti, Cr, Fe, Cu, Zn, Sr, Y, Zr, Sn, Sb, Ba, La, Ce, Pb), cluster 4: ZnO. According to their morphologies and chemical compositions, the possible sources of each cluster were as follows: (1) brake dust (particles rich in Fe and with trace Cu, Sb, and Ba), (2) yellow paint (CrPbO(4) particles), (3) brake dust (particulate Ti, Fe, Cu, Sb, Zr, and Ba) and heavy minerals (Y, Zr, La, and Ce), (4) tire tread (zinc oxide). When the chemical composition of tire dust was compared to that of tire tread, the tire dust was found to have greater concentrations of heavy metal elements as well as mineral or asphalt pavement material characterized by Al, Si, and Ca. We conclude that tire dust consists not only of the debris from tire wear but also of assimilated heavy metal particles emitted from road traffic materials such as brake lining and road paint. PMID:15337346

  2. Aerodynamics of Heavy Vehicles

    NASA Astrophysics Data System (ADS)

    Choi, Haecheon; Lee, Jungil; Park, Hyungmin

    2014-01-01

    We present an overview of the aerodynamics of heavy vehicles, such as tractor-trailers, high-speed trains, and buses. We introduce three-dimensional flow structures around simplified model vehicles and heavy vehicles and discuss the flow-control devices used for drag reduction. Finally, we suggest important unsteady flow structures to investigate for the enhancement of aerodynamic performance and future directions for experimental and numerical approaches.

  3. Process for removing heavy metal compounds from heavy crude oil

    DOEpatents

    Cha, Chang Y.; Boysen, John E.; Branthaver, Jan F.

    1991-01-01

    A process is provided for removing heavy metal compounds from heavy crude oil by mixing the heavy crude oil with tar sand; preheating the mixture to a temperature of about 650.degree. F.; heating said mixture to up to 800.degree. F.; and separating tar sand from the light oils formed during said heating. The heavy metals removed from the heavy oils can be recovered from the spent sand for other uses.

  4. Influence of homo buffer layer thickness on the quality of ZnO epilayers.

    PubMed

    Eid, E A; Fouda, A N

    2015-10-01

    ZnO buffer layers with different thicknesses were deposited on a-plane sapphire substrates at 300 °C. ZnO epilayers were grown on ZnO buffers at 600 °C by radio-frequency magnetron sputtering and vacuum annealed at 900 °C for an hour. Influence of nucleation layer thickness on the structural and quality of ZnO thin films was investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and Raman spectroscopy. The best ZnO film quality was obtained with the ZnO buffer layer of 45 nm thick which provided the smoothest surface with RMS value of 0.3 nm. X-ray diffraction measurements reveal that the films have a single phase wurtzite structure with (0001) preferred crystal orientation. As evident from narrow FWHM of ZnO (0002) rocking curve, ZnO buffer can serve as a good template for the growth of high-quality ZnO films with little tilt. In addition, the micro-Raman scattering measurements at room temperature revealed the existence of Raman active phonon modes of ZnO; A1(TO), A1(LO) and E2(high). The latter two modes were not observed in thin buffer layer beside the dis-appearance of E2(low) mode in all films. PMID:25950638

  5. Effect of nanocomposite packaging containing ZnO on growth of Bacillus subtilis and Enterobacter aerogenes.

    PubMed

    Esmailzadeh, Hakimeh; Sangpour, Parvaneh; Shahraz, Farzaneh; Hejazi, Jalal; Khaksar, Ramin

    2016-01-01

    Recent advances in nanotechnology have opened new windows in active food packaging. Nano-sized ZnO is an inexpensive material with potential antimicrobial properties. The aim of the present study is to evaluate the antibacterial effect of low density Polyethylene (LDPE) containing ZnO nanoparticles on Bacillus subtilis and Enterobacter aerogenes. ZnO nanoparticles have been synthesized by facil molten salt method and have been characterized by X-ray diffraction (XRD), and scanning electron microscopy (SEM). Nanocomposite films containing 2 and 4 wt.% ZnO nanoparticles were prepared by melt mixing in a twin-screw extruder. The growth of both microorganisms has decreased in the presence of ZnO containing nanocomposites compared with controls. Nanocomposites with 4 wt.% ZnO nanoparticles had stronger antibacterial effect against both bacteria in comparison with the 2 wt.% ZnO containing nanocomposites. B. subtilis as Gram-positive bacteria were more sensitive to ZnO containing nanocomposite films compared with E. aerogenes as Gram-negative bacteria. There were no significant differences between the migration of Zn ions from 2 and 4 wt.% ZnO containing nanocomposites and the released Zn ions were not significantly increased in both groups after 14 days compared with the first. Regarding the considerable antibacterial effects of ZnO nanoparticles, their application in active food packaging can be a suitable solution for extending the shelf life of food. PMID:26478403

  6. Photocorrosion inhibition and enhancement of photocatalytic activity for ZnO via hybridization with C60.

    PubMed

    Fu, Hongbo; Xu, Tongguang; Zhu, Shengbao; Zhu, Yongfa

    2008-11-01

    C60 molecules with monomolecular layer state dispersed on the surface of ZnO and formed the hybridized interaction between ZnO and C60. C60-hybridized ZnO photocatalyst showed enhanced photocatalytic activity for the degradation of the organic dye and the photocorrosion of ZnO was successfully inhibited bythe hybridization of C60 molecules. The photocorrosion inhibition of ZnO by C60 molecule could be attributed to the reduced activation of surface oxygen atom. The enhanced photocatalytic activity for C60-hybridized ZnO was originated from the high migration efficiency of photoinduced electrons on the interface of C60 and ZnO, which was produced by the interaction of C60 and ZnO with a conjugative pi-system. The enhancement degree of photocatalytic activity was strongly depended on the coverage of C60 molecules on the surface of ZnO nanoparticles, and the optimum hybridization effect was found at a weight ratio of 1.5% (C60/ZnO). The hybridization of C60 with semiconductors could be used to improve the photocatalytic activity as well as the photostability. PMID:19031903

  7. The growth of porous ZnO nanowires by thermal oxidation of ZnS nanowires.

    PubMed

    Hung, Chih-Cheng; Lin, Wen-Tai; Wu, Kuen-Hsien

    2011-12-01

    The growth of porous ZnO nanowires (NWs) via phase transformation of ZnS NWs at 500-850 degrees C in air was studied. The ZnS NWs were first synthesized by thermal evaporation of ZnS powder at 1100 degrees C in Ar. On subsequent annealing at 500 degrees C in air, discrete ZnO epilayers formed on the surface of ZnS NWs. At 600 degrees C, polycrystalline ZnO and the crack along the (0001) interface between the ZnO epilayer and ZnS NW were observed. At 700-750 degrees C ZnS NWs transformed to ZnO NWs, meanwhile nanopores and interfacial cracks were observed in the ZnO NWs. Two factors, the evaporation of SO2 and SO3 and the stress induced by the incompatible structure at the interface of ZnO epilayer and ZnS NW, can be responsible for the formation of porous ZnO NWs from ZnS NW templates on annealing at 700-750 degrees C in air. Rapid growth of ZnO at 850 degrees C could heal the pores and cracks and thus resulted in the well-crystallized ZnO NWs. PMID:22409083

  8. The Antibacterial Activity of Ta-doped ZnO Nanoparticles

    NASA Astrophysics Data System (ADS)

    Guo, Bing-Lei; Han, Ping; Guo, Li-Chuan; Cao, Yan-Qiang; Li, Ai-Dong; Kong, Ji-Zhou; Zhai, Hai-Fa; Wu, Di

    2015-08-01

    A novel photocatalyst of Ta-doped ZnO nanoparticles was prepared by a modified Pechini-type method. The antimicrobial study of Ta-doped ZnO nanoparticles on several bacteria of Gram-positive Bacillus subtilis ( B. subtilis) and Staphylococcus aureus ( S. aureus) and Gram-negative Escherichia coli ( E. coli) and Pseudomonas aeruginosa ( P. aeruginosa) were performed using a standard microbial method. The Ta-doping concentration effect on the minimum inhibitory concentration (MIC) of various bacteria under dark ambient has been evaluated. The photocatalytical inactivation of Ta-doped ZnO nanoparticles under visible light irradiation was examined. The MIC results indicate that the incorporation of Ta5+ ions into ZnO significantly improve the bacteriostasis effect of ZnO nanoparticles on E. coli, S. aureus, and B. subtilis in the absence of light. Compared to MIC results without light irradiation, Ta-doped ZnO and pure ZnO nanoparticles show much stronger bactericidal efficacy on P. aeruginosa, E. coli, and S. aureus under visible light illumination. The possible antimicrobial mechanisms in Ta-doped ZnO systems under visible light and dark conditions were also proposed. Ta-doped ZnO nanoparticles exhibit more effective bactericidal efficacy than pure ZnO in dark ambient, which can be attributed to the synergistic effect of enhanced surface bioactivity and increased electrostatic force due to the incorporation of Ta5+ ions into ZnO. Based on the antibacterial tests, 5 % Ta-doped ZnO is a more effective antimicrobial agent than pure ZnO.

  9. Zn2NF and Related Analogues of ZnO.

    PubMed

    Lingampalli, Srinivasa Rao; Manjunath, Krishnappa; Shenoy, Sandhya; Waghmare, Umesh V; Rao, C N R

    2016-07-01

    Substitution of aliovalent N(3-) and F(-) anions in place of O(2-) in ZnO brings about major changes in the electronic structure and properties, the composition, even with 10 atomic percent or less of the two anions, rendering the material yellow colored with a much smaller band gap. We have examined the variation of band gap of ZnO with progressive substitution of N and F and more importantly prepared Zn2NF which is the composition one obtains ultimately upon complete replacement of O(2-) ions. In this article, we present the results of a first complete study of the crystal and electronic structures as well as of properties of a stable metal nitride fluoride, Zn2NF. This material occurs in two crystal forms, tetragonal and orthorhombic, both with a band gap much smaller than that of ZnO. Electronic structures of Zn2NF as well as ZnO0.2N0.5F0.3 investigated by first-principles calculations show that the valence bands of these are dominated by the N (2p) states lying at the top. Interestingly, the latter is a p-type material, a property that has been anticipated for long time. The calculations predict conduction and valence band edges in Zn2NF to be favorable for water splitting. Zn2NF does indeed exhibit good visible-light-induced hydrogen evolution activity unlike ZnO. The present study demonstrates how aliovalent anion substitution can be employed for tuning band gaps of materials. PMID:27299368

  10. Electronic structure of Co-doped ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Neffati, Ahmed; Souissi, Hajer; Kammoun, Souha

    2012-10-01

    The optical transmission spectra, the photoluminescence (PL), and the photoluminescence excitation (PLE) spectra of the cobalt doped zinc oxide nanorods Zn1-xCoxO (x = 0.01, 0.10) were measured by Loan et al. [J. Phys. D: Appl. Phys. 42, 065412 (2009)] in the region 1.5-4 eV. These spectra exhibit a group of ultraviolet narrow lines in the region of 3.0-3.4 eV related to the near-band-edge emission of the host ZnO materials and a group of emission lines in the red region of 1.8-1.9 eV assigned to the radiative transitions within the tetrahedral Co2+ ions in the ZnO host crystal. The group of lines in the visible region provides important information about the electronic structure of the cobalt doped zinc oxide nanorods. This work investigates a theoretical crystal-field analysis of the visible lines associated to the Co2+ ion transition occupying a Td site symmetry in ZnO host crystal. A satisfactory correlations were obtained between experimental and calculated energy levels. The electronic structure was compared with the reported for cobalt transition ion doped in ZnO nanoparticles and bulk crystals [Volbers et al., Appl. Phys. A 88, 153 (2007) and H. J. Schulz and M. Thiede, Phys. Rev. B 35, 18 (1987)]. In order to explain the existence of excitation peaks observed near the band edge of the ZnO host, an energy transfer mechanism is proposed.