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Sample records for hf-based high-k gate

  1. Interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates

    NASA Astrophysics Data System (ADS)

    He, Gang; Chen, Xiaoshuang; Sun, Zhaoqi

    2013-03-01

    Recently, III-V materials have been extensively studied as potential candidates for post-Si complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle to implement III-V compound semiconductors for CMOS applications is the lack of high quality and thermodynamically stable insulators with low interface trap densities. Due to their excellent thermal stability and relatively high dielectric constants, Hf-based high-k gate dielectrics have been recently highlighted as the most promising high-k dielectrics for III-V-based devices. This paper provides an overview of interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates. We begin with a survey of methods developed for generating Hf-based high-k gate dielectrics. To address the impact of these hafnium based materials, their interfaces with GaAs as well as a variety of semiconductors are discussed. After that, the integration issues are highlighted, including the development of high-k deposition without Fermi level pinning, surface passivation and interface state, and integration of novel device structure with Si technology. Finally, we conclude this review with the perspectives and outlook on the future developments in this area. This review explores the possible influences of research breakthroughs of Hf-based gate dielectrics on the current and future applications for nano-MOSFET devices.

  2. Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

    NASA Astrophysics Data System (ADS)

    Dentoni Litta, E.; Hellström, P.-E.; Östling, M.

    2015-06-01

    High-k interfacial layers have been proposed as a way to extend the scalability of Hf-based high-k/metal gate CMOS technology, which is currently limited by strong degradations in threshold voltage control, channel mobility and device reliability when the chemical oxide (SiOx) interfacial layer is scaled below 0.4 nm. We have previously demonstrated that thulium silicate (TmSiO) is a promising candidate as a high-k interfacial layer, providing competitive advantages in terms of EOT scalability and channel mobility. In this work, the effect of the TmSiO interfacial layer on threshold voltage control is evaluated, showing that the TmSiO/HfO2 dielectric stack is compatible with threshold voltage control techniques commonly used with SiOx/HfO2 stacks. Specifically, we show that the flatband voltage can be set in the range -1 V to +0.5 V by the choice of gate metal and that the effective workfunction of the stack is properly controlled by the metal workfunction in a gate-last process flow. Compatibility with a gate-first approach is also demonstrated, showing that integration of La2O3 and Al2O3 capping layers can induce a flatband voltage shift of at least 150 mV. Finally, the effect of the annealing conditions on flatband voltage is investigated, finding that the duration of the final forming gas anneal can be used as a further process knob to tune the threshold voltage. The evaluation performed on MOS capacitors is confirmed by the fabrication of TmSiO/HfO2/TiN MOSFETs achieving near-symmetric threshold voltages at sub-nm EOT.

  3. Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

    NASA Astrophysics Data System (ADS)

    Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

    2013-06-01

    In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

  4. A new analytical threshold voltage model for symmetrical double-gate MOSFETs with high- k gate dielectrics

    NASA Astrophysics Data System (ADS)

    Chiang, T. K.; Chen, M. L.

    2007-03-01

    Based on the fully two-dimensional (2D) Poisson's solution in both silicon film and insulator layer, a compact and analytical threshold voltage model, which accounts for the fringing field effect of the short channel symmetrical double-gate (SDG) MOSFETs, has been developed. Exploiting the new model, a concerned analysis combining FIBL-enhanced short-channel effects and high- k gate dielectrics assess their overall impact on SDG MOSFET's scaling. It is found that for the same equivalent oxide thickness, the gate insulator with high- k dielectric constant which keeps a great characteristic length allows less design space than SiO 2 to sustain the same FIBL induced threshold voltage degradation.

  5. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    NASA Astrophysics Data System (ADS)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  6. Divergent dielectric characteristics in cascaded high-K gate stacks with reverse gradient bandgap structures

    NASA Astrophysics Data System (ADS)

    Tsai, Meng-Chen; Cheng, Po-Hsien; Lee, Min-Hung; Lin, Hsin-Chih; Chen, Miin-Jang

    2016-07-01

    The characteristics of cascaded high-K gate stacks with reverse dielectric sequence, TiO2/ZrO2/Al2O3 and Al2O3/ZrO2/ TiO2, on the Si substrate were investigated. The reverse sequence with different gradient bandgap structure gives rise to distinct conduction pathways, resulting in significant divergence of the leakage current density (J g) and the capacitance equivalent thickness (CET). The trapping sites in the high-permittivity TiO2 layer dominate the leakage current paths and strongly impact the conductance and the capacitance of the cascaded high-K gate stacks. Thus, a low CET of 1.05 nm and a low J g of ∼5  ×  10–4 A cm‑2 were achieved due to effective suppression of the leakage current through the traps of TiO2 in the cascaded TiO2/ZrO2/Al2O3 gate stack. In addition, the TiO2 layer gets crystallized in the cascaded TiO2/ZrO2/Al2O3 structure to achieve a higher capacitance because of the intermixing between TiO2 and ZrO2 due to the different reactivity of the precursors for Ti and Zr. This study demonstrates a way to effectively incorporate the high permittivity and low-bandgap materials, such as TiO2, into high-K gate stacks, to further improve device scaling.

  7. Analysis of high-k spacer on symmetric underlap DG-MOSFET with Gate Stack architecture

    NASA Astrophysics Data System (ADS)

    Das, Rahul; Chakraborty, Shramana; Dasgupta, Arpan; Dutta, Arka; Kundu, Atanu; Sarkar, Chandan K.

    2016-09-01

    This paper shows the systematic study of underlap double gate (U-DG) NMOSFETs with Gate Stack (GS) under the influence of high-k spacers. In highly scaled devices, underlap is used at the Source and Drain side so as to reduce the short channel effects (SCE's), however, it significantly reduces the on current due to the increased channel resistance. To overcome these drawbacks, the use of high-k spacers is projected as one of the remedies. In this paper, the analog performance of the devices is studied on the basis of parameters like transconductance (gm), transconductance generation factor (gm/Id) and intrinsic gain (gmro). The RF performance is analyzed on the merits of intrinsic capacitance (Cgd, Cgs), resistance (Rgd, Rgs), transport delay (τm), inductance (Lsd), cutoff frequency (fT), and the maximum frequency of oscillation (fmax). The circuit performance of the devices are studied by implementing the device as the driver MOSFET in a Single Stage Common Source Amplifier. The Gain Bandwidth Product (GBW) has been analyzed from the frequency response of the circuit.

  8. Lifetime of high-k gate dielectrics and analogy with strength of quasibrittle structures

    NASA Astrophysics Data System (ADS)

    Le, Jia-Liang; Bažant, Zdeněk P.; Bazant, Martin Z.

    2009-11-01

    The two-parameter Weibull distribution has been widely adopted to model the lifetime statistics of dielectric breakdown under constant voltage, but recent lifetime testing for high-k gate dielectrics has revealed a systematic departure from Weibull statistics, evocative of lifetime statistics for small quasibrittle structures under constant stress. Here we identify a mathematical analogy between the dielectric breakdown in semiconductor electronic devices and the finite-size weakest-link model for mechanical strength of quasibrittle structures and adapt a recently developed probabilistic theory of structural failure to gate dielectrics. Although the theory is general and does not rely on any particular model of local breakdown events, we show how its key assumptions can be derived from the classical dielectric breakdown model, which predicts certain scaling exponents. The theory accurately fits the observed kinked shape of the histograms of lifetime plotted in Weibull scale, as well as the measured dependence of the median lifetime on the gate area (or size), including its deviation from a power law. The theory also predicts that the Weibull modulus for breakdown lifetime increases in proportion to the thickness of the oxide layer and suggests new ideas for more effective reliability testing.

  9. Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

    NASA Astrophysics Data System (ADS)

    Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Ajayan, J.

    2016-09-01

    This work covers the impact of dual metal gate engineered Junctionless MOSFET with various high-k dielectric in Nanoscale circuits for low power applications. Due to gate engineering in junctionless MOSFET, graded potential is obtained and results in higher electron velocity of about 31% for HfO2 than SiO2 in the channel region, which in turn improves the carrier transport efficiency. The simulation is done using sentaurus TCAD, ON current, OFF current, ION/IOFF ratio, DIBL, gain, transconductance and transconductance generation factor parameters are analysed. When using HfO2, DIBL shows a reduction of 61.5% over SiO2. The transconductance and transconductance generation factor shows an improvement of 44% and 35% respectively. The gain and output resistance also shows considerable improvement with high-k dielectrics. Using this device, inverter circuit is implemented with different high-k dielectric material and delay have been decreased by 4% with HfO2 when compared to SiO2. In addition, a significant reduction in power dissipation of the inverter circuit is obtained with high-k dielectric Dual Metal Surround Gate Junctionless Transistor than SiO2 based device. From the analysis, it is found that HfO2 will be a better alternative for the future nanoscale device.

  10. Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions.

    PubMed

    Wu, Jun; Babadi, Aein Shiri; Jacobsson, Daniel; Colvin, Jovana; Yngman, Sofie; Timm, Rainer; Lind, Erik; Wernersson, Lars-Erik

    2016-04-13

    In this paper, we correlate the growth of InAs nanowires with the detailed interface trap density (Dit) profile of the vertical wrap-gated InAs/high-k nanowire semiconductor-dielectric gate stack. We also perform the first detailed characterization and optimization of the influence of the in situ doping supplied during the nanowire epitaxial growth on the sequential transistor gate stack quality. Results show that the intrinsic nanowire channels have a significant reduction in Dit as compared to planar references. It is also found that introducing tetraethyltin (TESn) doping during nanowire growth severely degrades the Dit profile. By adopting a high temperature, low V/III ratio tailored growth scheme, the influence of doping is minimized. Finally, characterization using a unique frequency behavior of the nanowire capacitance-voltage (C-V) characteristics reveals a change of the dopant incorporation mechanism as the growth condition is changed. PMID:26978479

  11. A high-k ferroelectric relaxor terpolymer as a gate dielectric for orgnaic thin film transistors

    SciTech Connect

    Wu, Shan; Shao, Ming; Burlingame, Quinn; Chen, Xiangzhong; Lin, Minren; Xiao, Kai; Zhang, Qiming

    2013-01-01

    Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE- CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/ off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained

  12. Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET

    NASA Astrophysics Data System (ADS)

    Sharma, Aniruddh; Jain, Arushi; Pratap, Yogesh; Gupta, R. S.

    2016-09-01

    In this paper, the impact of asymmetric gate stack architecture using a combination of vacuum and high-k dielectrics on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET has been investigated. A comparative evaluation of short channel effects (SCEs) for various device structures has also been carried out with figure of merit (FOM) metrics such as electric field, electron temperature, drain current (Ids), and drain induced barrier lowering (DIBL). A two-dimensional analytical model has been developed for the asymmetric architecture using Poisson's equation in cylindrical coordinates assuming a parabolic potential profile. It is observed that the asymmetric gate stack device demonstrates effectiveness in suppressing hot carrier degradation and short channel effects along with improving the current drivability of the device as compared to the other device configurations. The analytical results have been verified with the simulated data obtained from ATLAS 3-D device simulator.

  13. Hard X-ray photoemission experiments on novel Ge-based metal gate/high-k stacks

    NASA Astrophysics Data System (ADS)

    Rubio-Zuazo, J.; Martinez, E.; Batude, P.; Clavelier, L.; Soria, F.; Chabli, A.; Castro, G. R.

    2007-09-01

    The scaling of CMOS devices makes mandatory the study of new materials to overcome the physical limitations of the Si technology. Germanium is a good candidate to replace silicon for the channel to improve the carrier mobility. High-K dielectrics such as HfO2 are investigated to replace the gate oxide (SiO2) to decrease both leakage currents and EOT. For the gate electrode, it is also crucial to move from poly-silicon to a metal gate like TiN to adjust work function and to suppress poly-depletion in order to decrease EOT. However, to reach optimal device performances, both the Ge/high-K and high-K/TiN interfaces need to be optimized. In order to passive and prevent Ge oxidation we have deposited a very thin Si interlayer prior to the high-k growth. A thin Si layer (Si capping) is epitaxially grown on Ge and then partially oxidized before high-k deposition. The exact control of the Si capping layer is of major importance. It must be enough thick to prevent germanium oxidation when the partial oxidation of Si is realized and as low as possible in order to keep the benefit of the better transport properties in germanium. In this contribution, we present non-destructive chemical and concentration profile of both critical buried interfaces by mean of Hard X-ray Photoelectron Spectroscopy (HAXPES) of a Ge/Si/SiO2/HfO2/TiN stack, with thickness of 2500, 0.9, 0.5, 4 and 4 nm, respectively. Experiments are performed at the SpLine HAXPES station of the ESRF equipped with a novel photoemission set-up in combination with surface X-ray diffraction (SXRD). The profiles obtained clearly show that the Si interlayer prevents the Ge oxidation and the presence of a new Hf state which is related to an interface chemical shift. Our results demonstrate the excellent capability of HAXPES to study buried interfaces.

  14. Band Offsets of a Ruthenium Gate on Ultrathin High-k Oxide Films on Silicon

    SciTech Connect

    Rangan, S.; Bersch, W; Bartynski, R; Garfunkel, E; Vescovo, E

    2009-01-01

    Valence-band and conduction-band edges of ultrathin oxides and their shifts upon sequential metallization with ruthenium have been measured using synchrotron-radiation-excited x-ray, ultraviolet, and inverse photoemissions. From these techniques, the offsets between the valence-band and conduction-band edges of the oxides, and the ruthenium metal gate Fermi edge have been directly measured. In addition the core levels of the oxides and the ruthenium have been characterized. Upon deposition, Ru remains metallic and no chemical alteration of the underlying oxide gates, or interfacial SiO{sub 2} in the case of the high-? thin films, can be detected. However a clear shift of the band edges is measured for all samples due to the creation of an interface dipole at the ruthenium-oxide interface. Using the energy gap, the electron affinity of the oxides, and the ruthenium work function that have been directly measured on these samples, the experimental band offsets are compared to those predicted by the induced gap states model.

  15. Cross-linking high-k fluoropolymer gate dielectrics enhances the charge mobility in rubrene field effect transistors

    NASA Astrophysics Data System (ADS)

    Adhikari, Jwala; Gadinski, Matthew; Wang, Qing; Gomez, Enrique

    2015-03-01

    Polymer dielectrics are promising materials where the chemical flexibility enables gate insulators with desired properties. For example, polar groups can be introduced to enhance the dielectric constant, although fluctuations in chain conformations at the semiconductor-dielectric interface can introduce energetic disorder and limit charge mobilities in thin-film transistors. Here, we demonstrate a photopatternable high-K fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant between 8 and 11. The bromotrifluoroethylene moiety enables photo-crosslinking and stabilization of gate insulator films while also significantly enhancing the population of trans torsional conformations of the chains. Using rubrene single crystals as the active layer, charge mobilities exceeding 10 cm2/Vs are achieved in thin film transistors with cross-linked P(VDF-BTFE) gate dielectrics. We hypothesize that crosslinking reduces energetic disorder at the dielectric-semiconductor interface by suppressing segmental motion and controlling chain conformations of P(VDF-BTFE), thereby leading to approximately a three-fold enhancement in the charge mobility of rubrene thin-film transistors over devices incorporating uncross-linked dielectrics or silicon oxide. Center for Flexible Electronic, Penn State; The Dow Chemical Company.

  16. Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

    NASA Astrophysics Data System (ADS)

    Yuan, C. L.; Chan, M. Y.; Lee, P. S.; Darmawan, P.; Setiawan, Y.

    2007-04-01

    The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al2O3 nanocrystals embedded in amorphous Lu2O3 high k dielectric using pulsed laser ablation. The mean size and density of the Al2O3 nanocrystals are estimated to be about 5 nm and 7x1011 cm-2, respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical.

  17. The understanding on the evolution of stress-induced gate leakage in high-k dielectric metal-oxide-field-effect transistor by random-telegraph-noise measurement

    NASA Astrophysics Data System (ADS)

    Hsieh, E. R.; Chung, Steve S.

    2015-12-01

    The evolution of gate-current leakage path has been observed and depicted by RTN signals on metal-oxide-silicon field effect transistor with high-k gate dielectric. An experimental method based on gate-current random telegraph noise (Ig-RTN) technique was developed to observe the formation of gate-leakage path for the device under certain electrical stress, such as Bias Temperature Instability. The results show that the evolution of gate-current path consists of three stages. In the beginning, only direct-tunnelling gate current and discrete traps inducing Ig-RTN are observed; in the middle stage, interaction between traps and the percolation paths presents a multi-level gate-current variation, and finally two different patterns of the hard or soft breakdown path can be identified. These observations provide us a better understanding of the gate-leakage and its impact on the device reliability.

  18. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    NASA Astrophysics Data System (ADS)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Ogawa, Shingo; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2015-06-01

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlOx) interlayers. A step-by-step in situ procedure by deposition of AlOx and hafnium oxide (HfOx) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO2/AlOx/GeOx/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlOx interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 1011 cm-2eV-1 with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  19. Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys.

    PubMed

    Schulte-Braucks, C; von den Driesch, N; Glass, S; Tiedemann, A T; Breuer, U; Besmehn, A; Hartmann, J-M; Ikonic, Z; Zhao, Q T; Mantl, S; Buca, D

    2016-05-25

    (Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential for low power electronics due to the fundamental direct band gap and prospects as high mobility material. In this Article, we present a systematic study of HfO2/TaN high-k/metal gate stacks on (Si)GeSn ternary alloys and low temperature processes for large scale integration of Sn based alloys. Our investigations indicate that SiGeSn ternaries show enhanced thermal stability compared to GeSn binaries, allowing the use of the existing Si technology. Despite the multielemental interface and large Sn content of up to 14 atom %, the HfO2/(Si)GeSn capacitors show small frequency dispersion and stretch-out. The formed TaN/HfO2/(Si)GeSn capacitors present a low leakage current of 2 × 10(-8) A/cm(2) at -1 V and a high breakdown field of ∼8 MV/cm. For large Sn content SiGeSn/GeSn direct band gap heterostructures, process temperatures below 350 °C are required for integration. We developed an atomic vapor deposition process for TaN metal gate on HfO2 high-k dielectric and validated it by resistivity as well as temperature and frequency dependent capacitance-voltage measurements of capacitors on SiGeSn and GeSn. The densities of interface traps are deduced to be in the low 10(12) cm(-2) eV(-1) range and do not depend on the Sn-concentration. The new processes developed here are compatible with (Si)GeSn integration in large scale applications. PMID:27149260

  20. Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors

    NASA Astrophysics Data System (ADS)

    Suri, Rahul

    The purpose of this research work was to investigate the surface passivation methods and metal gate/high-k dielectric gate stacks for metal-oxide-semiconductor devices (MOS) on III-V compound semiconductor materials -- (i) GaAs for future high-speed low-power logic devices and (ii) AlGaN/GaN heterostructure for future high-speed high-power devices. GaAs is a candidate material for high-mobility channel in a NMOS transistor to extend the CMOS scaling up to and beyond the 16-nm technology node. AlGaN/GaN heterostructure is useful in a MOS-high electron mobility transistor (MOS-HEMT) device for providing a high current-carrying two dimensional electron gas (2DEG) channel. The interaction of GaAs surface with atomic layer deposition of high- k dielectrics was investigated to gain fundamental insights into the chemical properties of GaAs surface oxides and high-k/GaAs interface. Electrical characterization of devices was performed to understand the impact of high-k/GaAs interface on MOS device characteristics in order to form a suitable metal/high-k/GaAs gatestack for future high-speed logic and power devices. Reduction of native oxides on GaAs was found to occur during atomic layer deposition (ALD) of high-k dielectrics- HfO2 and Al2O3/HfO 2 nanolaminates on GaAs. Reaction between ALD metal precursor and native oxides on GaAs was identified to be the cause for consumption of native oxides. It was established that the ALD growth temperature has a strong impact on this phenomenon. During post-dielectric annealing the residual arsenic oxides at the interface decomposed leading to an increase in the interfacial gallium oxides. Presence of gallium oxide, Ga2O3 was identified as a cause for observed frequency dispersion in MOS capacitance-voltage curves indicative of a high interface state density. The chemical properties of the AlGaN/GaN heterostructure surface prepared by wet chemical treatment using HCl/HF and NH4OH solutions were investigated and compared. Both HCl and

  1. Understanding the Structure of High-K Gate Oxides - Oral Presentation

    SciTech Connect

    Miranda, Andre

    2015-08-25

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  2. A quantum mechanical treatment of low frequency noise in high-K NMOS transistors with ultra-thin gate dielectrics

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaochen; White, Marvin H.

    2012-12-01

    Our paper presents a quantum mechanical treatment of low-frequency noise in scaled NMOS transistors to extend the "unified" noise model and includes remote Coulomb scattering and surface roughness - the latter is a new consideration in the theory. Our experimental work focuses on scaled NMOS devices with a composite dielectric consisting of a 0.5 nm SiO2 covered with a high-K, 1.6 nm HfO2 with a metal gate. In the past, Coulomb scattering was assumed to arise from trapping centers located at the Si-SiO2 interface; however, this cannot give rise to a 1/f noise spectrum. We model remote Coulomb scattering into the dielectric film as traps in these films easily lie within a tunneling distance from the interface. This approach explains the decrease in the Coulomb scattering parameter (α) as a function of gate voltage. In addition, we introduce surface roughness scattering through fluctuations in the normal electric field due to fluctuations in the free carrier density with a surface scattering parameter (β) proportional to the SPICE surface roughness parameter, θS. Good agreement is obtained between our model and experimental results for both IDS-VGS and the power spectral density, SId, characteristics in very strong inversion region where surface quantization of the 2D subbands is strong.

  3. Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

    NASA Astrophysics Data System (ADS)

    Xu, Hao; Yang, Hong; Wang, Yan-Rong; Wang, Wen-Wu; Luo, Wei-Chun; Qi, Lu-Wei; Li, Jun-Feng; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2016-08-01

    High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes. The reliability of thin dielectric films becomes a limitation to device manufacturing, especially to the breakdown characteristic. In this work, a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up, and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation. It is found that all degradation factors, such as trap generation rate time exponent m, Weibull slope β and percolation factor s, each could be expressed as a function of trap density time exponent α. Based on the percolation relation and power law lifetime projection, a temperature related trap generation model is proposed. The validity of this model is confirmed by comparing with experiment results. For other device and material conditions, the percolation relation provides a new way to study the relationship between trap generation and lifetime projection. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

  4. Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.

    PubMed

    Rigante, Sara; Scarbolo, Paolo; Wipf, Mathias; Stoop, Ralph L; Bedner, Kristine; Buitrago, Elizabeth; Bazigos, Antonios; Bouvet, Didier; Calame, Michel; Schönenberger, Christian; Ionescu, Adrian M

    2015-05-26

    Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technology, instead of bulk MOSFETs, raise new opportunities and questions about the most suitable device architectures for sensing integrated circuits. In this work, we propose pH and ion sensors exploiting FinFETs fabricated on bulk silicon by a fully CMOS compatible approach, as an alternative to the widely investigated silicon nanowires on silicon-on-insulator substrates. We also provide an analytical insight of the concept of sensitivity for the electronic integration of sensors. N-channel fully depleted FinFETs with critical dimensions on the order of 20 nm and HfO2 as a high-k gate insulator have been developed and characterized, showing excellent electrical properties, subthreshold swing, SS ∼ 70 mV/dec, and on-to-off current ratio, Ion/Ioff ∼ 10(6), at room temperature. The same FinFET architecture is validated as a highly sensitive, stable, and reproducible pH sensor. An intrinsic sensitivity close to the Nernst limit, S = 57 mV/pH, is achieved. The pH response in terms of output current reaches Sout = 60%. Long-term measurements have been performed over 4.5 days with a resulting drift in time δVth/δt = 0.10 mV/h. Finally, we show the capability to reproduce experimental data with an extended three-dimensional commercial finite element analysis simulator, in both dry and wet environments, which is useful for future advanced sensor design and optimization. PMID:25817336

  5. Wet Etching of Heat Treated Atomic Layer Chemical Vapor Deposited Zirconium Oxide in HF Based Solutions

    NASA Astrophysics Data System (ADS)

    Balasubramanian, Sriram; Raghavan, Srini

    2008-06-01

    Alternative materials are being considered to replace silicon dioxide as gate dielectric material. Of these, the oxides of hafnium and zirconium show the most promise. However, integrating these new high-k materials into the existing complementary metal-oxide-semiconductor (CMOS) process remains a challenge. One particular area of concern is the wet etching of heat treated high-k dielectrics. In this paper, work done on the wet etching of heat treated atomic layer chemical vapor deposited (ALCVD) zirconium oxide in HF based solutions is presented. It was found that heat treated material, while refractory to wet etching at room temperature, is more amenable to etching at higher temperatures when methane sulfonic acid is added to dilute HF solutions. Selectivity over SiO2 is still a concern.

  6. Effect of atomic-arrangement matching on La2O3/Ge heterostructures for epitaxial high-k-gate-stacks

    NASA Astrophysics Data System (ADS)

    Kanashima, T.; Nohira, H.; Zenitaka, M.; Kajihara, Y.; Yamada, S.; Hamaya, K.

    2015-12-01

    We demonstrate a high-quality La2O3 layer on germanium (Ge) as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La2O3(001) and Ge(111). Structural analyses reveal that (001)-oriented La2O3 layers were grown epitaxially only when we used Ge(111) despite low growth temperatures less than 300 °C. The permittivity (k) of the La2O3 layer is roughly estimated to be ˜19 from capacitance-voltage (C-V) analyses in Au/La2O3/Ge structures after post-metallization-annealing treatments, although the C-V curve indicates the presence of carrier traps near the interface. By using X-ray photoelectron spectroscopy analyses, we find that only Ge-O-La bonds are formed at the interface, and the thickness of the equivalent interfacial Ge oxide layer is much smaller than that of GeO2 monolayer. We discuss a model of the interfacial structure between La2O3 and Ge(111) and comment on the C-V characteristics.

  7. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    SciTech Connect

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji Shimura, Takayoshi; Watanabe, Heiji; Ogawa, Shingo; Yoshigoe, Akitaka; Teraoka, Yuden

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  8. Mechanisms of temperature dependence of threshold voltage in high-k/metal gate transistors with different TiN thicknesses

    NASA Astrophysics Data System (ADS)

    Nishida, Yukio; Yokoyama, Shin

    2016-04-01

    The change in temperature coefficient of the threshold voltage (=dVth/dT) for poly-Si/TiN/high-k gate insulator metal-oxide-semiconductor field-effect transistors (MOSFETs) was systematically investigated with respect to various TiN thicknesses for both n- and p-channel MOSFETs. With increasing TiN thickness, dVth/dT shifts towards negative values for both n- and p-MOSFETs. A mechanism that changes dVth/dT, depending on TiN thickness is proposed. The main origins are the work function of TiN (ΦTiN) and its temperature coefficient (dΦTiN/dT). These are revealed to change when decreasing the thickness of the TiN layer, because the crystallinity of the TiN layer is degraded for thinner films, which was confirmed by ultraviolet photoelectron spectroscopy (UPS), transmission electron microscopy (TEM) and X-ray diffraction (XRD).

  9. A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

    NASA Astrophysics Data System (ADS)

    Chaowen, Liu; Jingping, Xu; Lu, Liu; Hanhan, Lu; Yuan, Huang

    2016-02-01

    A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. Project supported by the National Natural Science Foundation of China (No. 61176100).

  10. Characterization of high-k gate dielectrics based on hafnium oxide and titanium oxide for CMOS application

    NASA Astrophysics Data System (ADS)

    Lee, Sanghyun

    Hafnium oxide, Titanium oxide, and ternary alloys with nitrided films of each of the above on Silicon and Germanium substrate were investigated in effort of understanding origins and various factors governing intrinsic band edge defects and interface trapped charges which are crucial to implent the high-k dielectrics into CMOS device below Electrical Equivalent Thickness (EOT) < 1nm. Novel design of atomic scale molecule was applied to achieve superb quality guided by the bond constrain theory. Tetrahedral bonding of Hf and Ti oxide in each Hf/Ti Silicon oxynitride gave the chemical stability upon annealing up to 1100°C. From the spectroscopic and electrical measurements, defect states were suppressed by reducing oxygen vacancy related defect states in Hf/Ti Silicon oxynitride. Conduction and valence band edge defect states were detected and reduced by limiting the thickness of HfO2 to 2 nm which is critical length for forming coherent inter-primitive pi bonding between Hf dpi-O ppi orbitals. As a result, Jahn-Teller d state term splittings were suppressed. The application of ultrathin Hf oxide and Hf Si oxynitride films onto Ge (100) and Ge (111) substrates resulted in the elimination of interfacial transition layer by removing Ge-N and possibly Ge-O bond after 800°C anneal. This could afford re-grown Ge epitaxial layer on top of Ge substrate which dramatically reduced the defect states between Hf Silicon oxynitride and Ge substrate. The gate leakage current for Hf Silicon oxynitride was lower than that on Si substrate.

  11. Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device

    NASA Astrophysics Data System (ADS)

    Xu, Qiuxia; Xu, G.; Zhou, H.; Zhu, H.; Liu, J.; Wang, Y.; Li, J.; Xiang, J.; Liang, Q.; Wu, H.; Zhong, J.; Xu, M.; Xu, W.; Ma, X.; Wang, X.; Tong, X.; Chen, D.; Yan, J.; Zhao, C.; Ye, T.

    2016-01-01

    Attainment of dual band-edge effective work functions by using a single metal gate and single high k gate dielectric via P/BF2 implantation into a TiN metal gate for HP HKMG CMOS device applications are investigated under a gate-last process flow for the first time. The flat band voltage (VFB) modulations of about -750 mV/570 mV for N-/P-type MOS device with P/BF2 implanted TiN/HfO2/ILSiO2 gate stack are obtained respectively in the experiment range. Suitable low threshold voltages of CMOSFETs are gotten while simultaneously shrinking the EOT. The effects of P/BF2 ion implantation energy, dose and TiN gate thickness on the properties of implanted TiN/HfO2/ILSiO2 gate stack are studied, the possible mechanisms are discussed. This technique has been successfully integrated into the fabrications of aggressively scaled HP HKMG CMOSFETs and 32 CMOS frequency dividers under a gate-last process flow.

  12. Fabrication of high-k/metal-gate MoS2 field-effect transistor by device isolation process utilizing Ar-plasma etching

    NASA Astrophysics Data System (ADS)

    Ninomiya, Naruki; Mori, Takahiro; Uchida, Noriyuki; Watanabe, Eiichiro; Tsuya, Daiju; Moriyama, Satoshi; Tanaka, Masatoshi; Ando, Atsushi

    2015-04-01

    We investigated a device isolation process for MoS2-based devices and fabricated high-k/metal-gate MoS2 MOSFETs. An Ar-ion etching process was utilized for the device isolation process. It circumvents damage in the device channel, as confirmed by Raman spectroscopy. A top-gate MoS2 MOSFET was fabricated with a HfO2 thin film 16 nm thick as the gate insulator. Utilizing capacitance-voltage (C-V) measurements, the capacitance equivalent thickness (CET) was estimated to be 5.36 nm, which indicates that a gate stack with the sufficiently thin insulator was successfully realized. The device exhibited a mobility of 25.3 cm2/(V·s), a subthreshold swing (SS) of 86.0 mV/decade, and an ON/OFF ratio of 107. This satisfactory device performance demonstrates the feasibility of the proposed device isolation process.

  13. Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for various Al concentrations

    NASA Astrophysics Data System (ADS)

    Kothari, Shraddha; Joishi, Chandan; Ghosh, Sayantan; Biswas, Dipankar; Vaidya, Dhirendra; Ganguly, Swaroop; Lodha, Saurabh

    2016-07-01

    We demonstrate improved Ge n-channel gate stack performance versus HfO2 using HfAlO high-k dielectric for a wide (1.5–33%) range of Al% and post-high-k-deposition annealing (PDA) at 400 °C. Addition of Al to HfO2 is shown to mitigate degradation of the GeO2/Ge interface during PDA. HfAlO stacks with an equivalent oxide thickness (EOT) of 8 nm and large Al% exhibit improved transistor mobility (1.8 times higher) and midgap D it (2 times lower), whereas thin (1.9 nm) EOT HfAlO stacks show reduced gate leakage J g (by 10 times) and D it (by 1.5 times) and 1.6 times higher mobility for Al% as low as 1.5% at matched EOT.

  14. Evolution of metal-compound residues on the walls of plasma etching reactor and their effect on critical dimensions of high-k/metal gate

    SciTech Connect

    Iwakoshi, Takehisa; Ono, Tetsuo; Aoyama, Takayuki; Nara, Yasuo; Ohji, Yuzuru

    2009-05-15

    It was found that critical dimensions of high-k/metal gates obey the multivariate linear approximation with the precision of 3{sigma}={+-}0.86 nm, whose explanatory variables are amounts of metal compounds remaining on the plasma reactor walls. To measure their amounts, the authors assumed they are proportional to amounts of atoms sputtered out by Ar plasma and falling onto a Si wafers placed on a wafer stage. In this study, effects of metal compounds of W, Ti, Ta, and Hf, which are used to construct full-metal/high-k gates, were measured. It was found that Ti and Ta compounds dominate the fluctuation of critical dimensions and the dependency of their amount on wafer numbers being etched obeys a simple difference equation. From these results, they can estimate and minimize the fluctuations of critical dimensions in mass fabrications.

  15. Extremely scaled high-k/In₀.₅₃Ga₀.₄₇As gate stacks with low leakage and low interface trap densities

    SciTech Connect

    Chobpattana, Varistha; Mikheev, Evgeny; Zhang, Jack Y.; Mates, Thomas E.; Stemmer, Susanne

    2014-09-28

    Highly scaled gate dielectric stacks with low leakage and low interface trap densities are required for complementary metal-oxide-semiconductor technology with III-V semiconductor channels. Here, we show that a novel pre-deposition technique, consisting of alternating cycles of nitrogen plasma and tetrakis(dimethylamino)titanium, allows for HfO₂ and ZrO₂ gate stacks with extremely high accumulation capacitance densities of more than 5 μF/cm₂ at 1 MHz, low leakage current, low frequency dispersion, and low midgap interface trap densities (10¹²cm⁻²eV⁻¹range). Using x-ray photoelectron spectroscopy, we show that the interface contains TiO₂ and small quantities of In₂O₃, but no detectable Ga- or As-oxides, or As-As bonding. The results allow for insights into the microscopic mechanisms that control leakage and frequency dispersion in high-k/III-V gate stacks.

  16. Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

    NASA Astrophysics Data System (ADS)

    Li, Yun; Jiang, Hai; Lun, Zhiyuan; Wang, Yijiao; Huang, Peng; Hao, Hao; Du, Gang; Zhang, Xing; Liu, Xiaoyan

    2016-04-01

    Degradation behaviors in the high-k/metal gate stacks of nMOSFETs are investigated by three-dimensional (3D) kinetic Monte-Carlo (KMC) simulation with multiple trap coupling. Novel microscopic mechanisms are simultaneously considered in a compound system: (1) trapping/detrapping from/to substrate/gate; (2) trapping/detrapping to other traps; (3) trap generation and recombination. Interacting traps can contribute to random telegraph noise (RTN), bias temperature instability (BTI), and trap-assisted tunneling (TAT). Simulation results show that trap interaction induces higher probability and greater complexity in trapping/detrapping processes and greatly affects the characteristics of RTN and BTI. Different types of trap distribution cause largely different behaviors of RTN, BTI, and TAT. TAT currents caused by multiple trap coupling are sensitive to the gate voltage. Moreover, trap generation and recombination have great effects on the degradation of HfO2-based nMOSFETs under a large stress.

  17. Study of Hf-Ti-O Thin Film as High-k Gate Dielectric and Application for ETSOI MOSFETs

    NASA Astrophysics Data System (ADS)

    Chen, Xiaoqiang; Zhao, Hongbin; Xiong, Yuhua; Wei, Feng; Du, Jun; Tang, Zhaoyun; Tang, Bo; Yan, Jiang

    2016-05-01

    This work focused on the metal-oxide-semiconductor (MOS) capacitor and extremely thin silicon-on-insulator (ETSOI) p-type MOS field-effect transistor (pMOSFET) with laminated hafnium and titanium oxide (Hf-Ti-O) thin films as gate dielectric. The electrical behavior of the MOS capacitor shows that the capacitor with Hf-Ti-O gate dielectric has high performance with low equivalent oxide thickness (EOT, ~0.77 nm), small hysteresis (ΔV fb, ~4 mV), and gate current density of 0.33 A/cm2 at V g = V fb - 1 V. The dominant conduction mechanism of the Hf-Ti-O thin film (25°C to 125°C) was Schottky emission at lower gate voltage (-0.8 V to -0.2 V) and Fowler-Nordheim (F-N) tunneling at higher gate voltage (<-0.8 V). An ETSOI pMOSFET with 25 nm gate length (L g) also exhibited good electrical properties with switch ratio of 3.2 × 104, appropriate threshold voltage of -0.16 V, maximum transconductance (G max) of 2.63 mS, drain-induced barrier lowering of 53 mV/V, and subthreshold swing of 65 mV/dec.

  18. Study of Hf-Ti-O Thin Film as High- k Gate Dielectric and Application for ETSOI MOSFETs

    NASA Astrophysics Data System (ADS)

    Chen, Xiaoqiang; Zhao, Hongbin; Xiong, Yuhua; Wei, Feng; Du, Jun; Tang, Zhaoyun; Tang, Bo; Yan, Jiang

    2016-08-01

    This work focused on the metal-oxide-semiconductor (MOS) capacitor and extremely thin silicon-on-insulator (ETSOI) p-type MOS field-effect transistor ( pMOSFET) with laminated hafnium and titanium oxide (Hf-Ti-O) thin films as gate dielectric. The electrical behavior of the MOS capacitor shows that the capacitor with Hf-Ti-O gate dielectric has high performance with low equivalent oxide thickness (EOT, ~0.77 nm), small hysteresis (Δ V fb, ~4 mV), and gate current density of 0.33 A/cm2 at V g = V fb - 1 V. The dominant conduction mechanism of the Hf-Ti-O thin film (25°C to 125°C) was Schottky emission at lower gate voltage (-0.8 V to -0.2 V) and Fowler-Nordheim (F-N) tunneling at higher gate voltage (<-0.8 V). An ETSOI pMOSFET with 25 nm gate length ( L g) also exhibited good electrical properties with switch ratio of 3.2 × 104, appropriate threshold voltage of -0.16 V, maximum transconductance ( G max) of 2.63 mS, drain-induced barrier lowering of 53 mV/V, and subthreshold swing of 65 mV/dec.

  19. High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment

    NASA Astrophysics Data System (ADS)

    Liu, Chao-Wen; Xu, Jing-Ping; Liu, Lu; Lu, Han-Han

    2015-12-01

    High-k gate dielectric HfTiON GaAs metal-oxide-semiconductor (MOS) capacitors with LaON as interfacial passivation layer (IPL) and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither LaON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated GaAs MOS device with a stacked gate dielectric of HfTiON/LaON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, LaON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/GaAs interface. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112).

  20. W versus Co-Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22 nm Technology Nodes

    NASA Astrophysics Data System (ADS)

    Veloso, Anabela; Aik Chew, Soon; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Tielens, Hilde; Heylen, Nancy; Devriendt, Katia; Sebaai, Farid; Brus, Stephan; Ragnarsson, Lars-Åke; Pantisano, Luigi; Eneman, Geert; Carbonell, Laure; Richard, Olivier; Favia, Paola; Geypen, Jef; Bender, Hugo; Higuchi, Yuichi; Phatak, Anup; Thean, Aaron; Horiguchi, Naoto

    2013-04-01

    In this work we provide a comprehensive evaluation of a novel, low-resistance Co-Al alloy vs W to fill aggressively scaled gates with high aspect-ratios [gate height (Hgate) ˜50-60 nm, gate length (Lgate) ≥20-25 nm]. We demonstrate that, with careful liner/barrier materials selection and tuning, well-behaved devices are obtained, showing: tight gate resistance (Rgate) distributions down to Lgate˜20 nm, low threshold voltage (VT) values, comparable DC and bias temperature instability (BTI) behavior, and improved RF response. The impact of fill-metals intrinsic stress, including the presence of occasional voids in narrow W-gates, on devices fabrication and performance is also explored.

  1. High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors.

    PubMed

    Wirths, Stephan; Stange, Daniela; Pampillón, Maria-Angela; Tiedemann, Andreas T; Mussler, Gregor; Fox, Alfred; Breuer, Uwe; Baert, Bruno; San Andrés, Enrique; Nguyen, Ngoc D; Hartmann, Jean-Michel; Ikonic, Zoran; Mantl, Siegfried; Buca, Dan

    2015-01-14

    We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nmAl2O3/4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance-voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations. PMID:25531887

  2. Electric field-induced transport modulation in VO2 FETs with high-k oxide/organic parylene-C hybrid gate dielectric

    NASA Astrophysics Data System (ADS)

    Wei, Tingting; Kanki, Teruo; Fujiwara, Kohei; Chikanari, Masashi; Tanaka, Hidekazu

    2016-02-01

    We report on the observation of reversible and immediate resistance switching by high-k oxide Ta2O5/organic parylene-C hybrid dielectric-gated VO2 thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO2 through the electrostatic field-induced transport modulation.

  3. Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation

    NASA Astrophysics Data System (ADS)

    Kao, Tsung-Hsien; Chang, Shoou-Jinn; Fang, Yean-Kuen; Huang, Po-Chin; Wang, Bo-Chin; Wu, Chung-Yi; Wu, San-Lein

    2016-01-01

    In this study, the properties of dielectric traps by the impact of Fluorine (F) implantation on 1/f noise and the random telegraph noise (RTN) of high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) were investigated. The incorporation of F has been identified as an effective method to passivate oxygen vacancies, defect sites, and reduce the gate leakage current in pMOSFETs. Compared with a control device, the F-implanted HK/MG devices show that the trap positions were closer to the SiO2 interfacial layer (IL)/Si channel. Furthermore, we found that F implantation could result in a smaller tunneling attenuation length (λ) and smaller slow oxide interface trap density (Nt).

  4. Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology

    NASA Astrophysics Data System (ADS)

    Veloso, Anabela; Aik Chew, Soon; Higuchi, Yuichi; Ragnarsson, Lars-Åke; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, Michael S.; Lu, Xinliang; Ganguli, Seshadri; Lei, Yu; Tang, Wei; Fu, Xinyu; Gandikota, Srinivas; Noori, Atif; Brand, Adam; Yoshida, Naomi; Thean, Aaron; Horiguchi, Naoto

    2013-04-01

    This work reports on aggressively scaled replacement metal gate, high-k last devices (RMG-HKL), exploring several options for effective work function (EWF) engineering, and targeting logic high-performance and low-power applications. Tight low-threshold voltage (VT) distributions for scaled NMOS devices are obtained by controlled TiN/TiAl-alloying, either by using RF-physical vapor deposition (RF-PVD) or atomic layer deposition (ALD) for TiN growth. The first technique allows optimization of the TiAl/TiN thicknesses at the bottom of gate trenches while maximizing the space to be filled with a low-resistance metal; using ALD minimizes the occurrence of preferential paths, at gate sidewalls, for Al diffusion into the high-k dielectric, reducing gate leakage (JG). For multi-gate fin field-effect transistors (FinFETs) which require smaller EWF shifts from mid-gap for low-VT: 1) conformal, lower-JG ALD-TiN/TaSiAl; and 2) Al-rich ALD-TiN by controlled Al diffusion from the fill-metal are demonstrated to be promising candidates. Comparable bias temperature instability (BTI), improved noise behavior, and slightly reduced equivalent oxide thickness (EOT) are measured on Al-rich EWF-metal stacks.

  5. An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness

    NASA Astrophysics Data System (ADS)

    Xueli, Ma; Hong, Yang; Wenwu, Wang; Huaxiang, Yin; Huilong, Zhu; Chao, Zhao; Dapeng, Chen; Tianchun, Ye

    2014-09-01

    We evaluated the TiN/TaN/TiAl triple-layer to modulate the effective work function (EWF) of a metal gate stack for the n-type metal-oxide-semiconductor (NMOS) devices application by varying the TiN/TaN thickness. In this paper, the effective work function of EWF ranges from 4.22 to 4.56 eV with different thicknesses of TiN and TaN. The thinner TiN and/or thinner in situ TaN capping, the closer to conduction band of silicon the EWF is, which is appropriate for 2-D planar NMOS. Mid-gap work function behavior is observed with thicker TiN, thicker in situ TaN capping, indicating a strong potential candidate of metal gate material for replacement gate processed three-dimensional devices such as FIN shaped field effect transistors. The physical understandings of the sensitivity of EWF to TiN and TaN thickness are proposed. The thicker TiN prevents the Al diffusion then induces the EWF to shift to mid-gap. However, the TaN plays a different role in effective work function tuning from TiN, due to the Ta—O dipoles formed at the interface between the metal gate and the high-k layer.

  6. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure

    PubMed Central

    2012-01-01

    A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal–semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials. PMID:22853458

  7. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

    PubMed

    Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

    2012-01-01

    A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials. PMID:22853458

  8. Structural and electrical properties of thin SrHfON films for high-k gate dielectric

    SciTech Connect

    Feng Liping; Liu Zhengtang

    2009-06-22

    Thin SrHfON films were prepared by reactive cosputtering of Hf-O and Sr-O targets in Ar/N{sub 2} ambient environment. Structural and electrical properties of the as-deposited and annealed SrHfON films used as gate dielectrics have been investigated. The SrHfON films have crystallization temperature higher than 900 deg. C. After annealing at 900 deg. C, high dielectric constant of 19.3 and effective work function of 4.13 eV was obtained for the SrHfON films. It is worth mentioning that the leakage current density of Au/SrHfON/IL SiO{sub x} gate stack is two orders of magnitude lower than that of polycrystalline silicon/HfO{sub 2} structure.

  9. Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT.

    PubMed

    Zhou, Changjian; Wang, Xinsheng; Raju, Salahuddin; Lin, Ziyuan; Villaroman, Daniel; Huang, Baoling; Chan, Helen Lai-Wa; Chan, Mansun; Chai, Yang

    2015-05-21

    MoS2 and other atomic-level thick layered materials have been shown to have a high potential for outperforming Si transistors at the scaling limit. In this work, we demonstrate a MoS2 transistor with a low voltage and high ON/OFF ratio. A record small equivalent oxide thickness of ∼1.1 nm has been obtained by using ultra high-k gate dielectric Pb(Zr0.52Ti0.48)O3. The low threshold voltage (<0.5 V) is comparable to that of the liquid/gel gated MoS2 transistor. The small sub-threshold swing of 85.9 mV dec(-1), the high ON/OFF ratio of ∼10(8) and the negligible hysteresis ensure a high performance of the MoS2 transistor operating at 1 V. The extracted field-effect mobility of 1-10 cm(2) V(-1) s(-1) suggests a high crystalline quality of the CVD-grown MoS2 flakes. The combination of the two-dimensional layered semiconductor and the ultra high-k dielectric may enable the development of low-power electronic applications. PMID:25907959

  10. Electric Field-induced Resistance Switching in VO2 Channels using Hybrid Gate Dielectric of High- k Ta2O5/Organic material Parylene-C

    NASA Astrophysics Data System (ADS)

    Wei, Tingting; Kanki, Teruo; Fujiwara, Kohei; Chikanari, Masashi; Tanaka, Hidekazu

    Electrostatic approach utilizing field-effect transistor (FET) with correlated electron materials provides an avenue to realize the novel devices (Mott-transistor) and to clarify condensed matter physics. In this study, we have prepared Mott-transistors using vanadium dioxide (VO2) channels and employed hybrid gate dielectric consisted of high- k material Ta2O5 and organic polymer parylene-C to trigger carrier transport modulation in VO2. Obvious resistance modulations were observed in insulating regime through time-dependent resistance measurement at varied square-shaped gate bias (VG) . Contrasting to the hysteretic response in electric double layer transistor (EDLT), an abrupt resistance switching in less than of 2-second-interval enables us to attribute such immediate modulation to pure electrostatic effect. Moreover, the maximum of resistance change was identified to appear around phase transition temperature (TMI) , which confirmed the disordered heterogeneous regime at TMI. Taking advantage of systematic modulation using VO2-based devices, we demonstrated the pronounced shifts of TMI by gate bias. Another fascinating behavior on asymmetric drop in TMI by hole-electron carrier doping was observed.

  11. Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si

    NASA Astrophysics Data System (ADS)

    Dai, J. Y.; Lee, P. F.; Wong, K. H.; Chan, H. L. W.; Choy, C. L.

    2003-07-01

    Epitaxial yttrium-stabilized HfO2 thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550 °C. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si//(100)HfO2 and [001]Si//[001]HfO2. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion. X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO2 thin film on bare Si is via a direct growth mechanism without involving the reaction between Hf atoms and SiO2 layer. High-frequency capacitance-voltage measurement on an as-grown 40-Å yttrium-stabilized HfO2 epitaxial film yielded an effective dielectric constant of about 14 and equivalent oxide thickness to SiO2 of 12 Å. The leakage current density is 7.0×10-2 A/cm2 at 1 V gate bias voltage.

  12. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

    NASA Astrophysics Data System (ADS)

    Hao, Xu; Hong, Yang; Yanrong, Wang; Wenwu, Wang; Guangxing, Wan; Shangqing, Ren; Weichun, Luo; Luwei, Qi; Chao, Zhao; Dapeng, Chen; Xinyu, Liu; Tianchun, Ye

    2016-05-01

    The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler–Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process. Project supported by the National High Technology Research and Development Program (863 Program) of China (No. SS2015AA010601), the National Natural Science Foundation of China (Nos. 61176091, 61306129), and the Opening Project of the Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.

  13. Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/f noise measurements

    NASA Astrophysics Data System (ADS)

    Kao, Tsung-Hsien; Wu, San-Lein; Tsai, Kai-Shiang; Fang, Yean-Kuen; Lai, Chien-Ming; Hsu, Chia-Wei; Chen, Yi-Wen; Cheng, Osbert; Chang, Shoou-Jinn

    2014-01-01

    In this study, the impact of aluminum ion implantation on 1/f noise characteristics and random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) was investigated. Aluminum ion implantation (Al I/I) into TiN/HfO2/SiO2 was implemented to tune an effective work function (EWF) in pMOSFETs without EOT increase complicated processes. RTN and 1/f results revealed that regardless of the implanted dose, HK/MG devices with Al I/I exhibit lower slow oxide trap densities than the control devices, which are responsible for the reduced trap position (xt) from the SiO2 interfacial layer (IL)/Si interface. For the HK/MG devices with different implanted doses, no significant differences in trap properties were observed.

  14. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric

    NASA Astrophysics Data System (ADS)

    Ling, Zhi-Peng; Zhu, Jun-Tao; Liu, Xinke; Ang, Kah-Wee

    2016-05-01

    Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits strong in-plane anisotropic charge transport. Discovering its interface properties between BP and high-k gate dielectric is fundamentally important for enhancing the carrier mobility and electrostatics control. Here, we investigate the impact of interface engineering on the transport properties of BP transistors with an ultra-thin hafnium-dioxide (HfO2) gate dielectric of ~3.4 nm. A high hole mobility of ~536 cm2V‑1s‑1 coupled with a near ideal subthreshold swing (SS) of ~66 mV/dec were simultaneously achieved at room temperature by improving the BP/HfO2 interface quality through thermal treatment. This is attributed to the passivation of phosphorus dangling bonds by hafnium (Hf) adatoms which produces a more chemically stable interface, as evidenced by the significant reduction in interface states density. Additionally, we found that an excessively high thermal treatment temperature (beyond 200 °C) could detrimentally modify the BP crystal structure, which results in channel resistance and mobility degradation due to charge-impurities scattering and lattice displacement. This study contributes to an insight for the development of high performance BP-based transistors through interface engineering.

  15. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric

    PubMed Central

    Ling, Zhi-Peng; Zhu, Jun-Tao; Liu, Xinke; Ang, Kah-Wee

    2016-01-01

    Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits strong in-plane anisotropic charge transport. Discovering its interface properties between BP and high-k gate dielectric is fundamentally important for enhancing the carrier mobility and electrostatics control. Here, we investigate the impact of interface engineering on the transport properties of BP transistors with an ultra-thin hafnium-dioxide (HfO2) gate dielectric of ~3.4 nm. A high hole mobility of ~536 cm2V−1s−1 coupled with a near ideal subthreshold swing (SS) of ~66 mV/dec were simultaneously achieved at room temperature by improving the BP/HfO2 interface quality through thermal treatment. This is attributed to the passivation of phosphorus dangling bonds by hafnium (Hf) adatoms which produces a more chemically stable interface, as evidenced by the significant reduction in interface states density. Additionally, we found that an excessively high thermal treatment temperature (beyond 200 °C) could detrimentally modify the BP crystal structure, which results in channel resistance and mobility degradation due to charge-impurities scattering and lattice displacement. This study contributes to an insight for the development of high performance BP-based transistors through interface engineering. PMID:27222074

  16. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric.

    PubMed

    Ling, Zhi-Peng; Zhu, Jun-Tao; Liu, Xinke; Ang, Kah-Wee

    2016-01-01

    Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits strong in-plane anisotropic charge transport. Discovering its interface properties between BP and high-k gate dielectric is fundamentally important for enhancing the carrier mobility and electrostatics control. Here, we investigate the impact of interface engineering on the transport properties of BP transistors with an ultra-thin hafnium-dioxide (HfO2) gate dielectric of ~3.4 nm. A high hole mobility of ~536 cm(2)V(-1)s(-1) coupled with a near ideal subthreshold swing (SS) of ~66 mV/dec were simultaneously achieved at room temperature by improving the BP/HfO2 interface quality through thermal treatment. This is attributed to the passivation of phosphorus dangling bonds by hafnium (Hf) adatoms which produces a more chemically stable interface, as evidenced by the significant reduction in interface states density. Additionally, we found that an excessively high thermal treatment temperature (beyond 200 °C) could detrimentally modify the BP crystal structure, which results in channel resistance and mobility degradation due to charge-impurities scattering and lattice displacement. This study contributes to an insight for the development of high performance BP-based transistors through interface engineering. PMID:27222074

  17. Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

    PubMed Central

    Hussin, H.; Soin, N.; Bukhori, M. F.; Wan Muhamad Hatta, S.; Abdul Wahab, Y.

    2014-01-01

    We present a simulation study on negative bias temperature instability (NBTI) induced hole trapping in E′ center defects, which leads to depassivation of interface trap precursor in different geometrical structures of high-k PMOSFET gate stacks using the two-stage NBTI model. The resulting degradation is characterized based on the time evolution of the interface and hole trap densities, as well as the resulting threshold voltage shift. By varying the physical thicknesses of the interface silicon dioxide (SiO2) and hafnium oxide (HfO2) layers, we investigate how the variation in thickness affects hole trapping/detrapping at different stress temperatures. The results suggest that the degradations are highly dependent on the physical gate stack parameters for a given stress voltage and temperature. The degradation is more pronounced by 5% when the thicknesses of HfO2 are increased but is reduced by 11% when the SiO2 interface layer thickness is increased during lower stress voltage. However, at higher stress voltage, greater degradation is observed for a thicker SiO2 interface layer. In addition, the existence of different stress temperatures at which the degradation behavior differs implies that the hole trapping/detrapping event is thermally activated. PMID:25221784

  18. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    SciTech Connect

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-10-06

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO{sub 2} interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  19. Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor

    NASA Astrophysics Data System (ADS)

    Lim, Han Jin; Kim, Youngkuk; Sang Jeon, In; Yeo, Jaehyun; Im, Badro; Hong, Soojin; Kim, Bong-Hyun; Nam, Seok-Woo; Kang, Ho-kyu; Jung, E. S.

    2013-06-01

    The positive bias temperature instability (PBTI) characteristics of the n-channel metal-oxide-semiconductor field emission transistors which had different kinds of high-k dielectric gate oxides were studied with the different stress-relaxation times. The degradation in the threshold voltage followed a power-law on the stress times. In particular, we found that their PBTI behaviors were closely related to the structural phase of the high-k dielectric gate oxide. In an amorphous gate oxide, the negative charges were trapped into the stress-induced defects of which energy level was so deep that the trapped charges were de-trapped slowly. Meanwhile, in a crystalline gate oxide, the negative charges were trapped mostly in the pre-existing defects in the crystallized films during early stage of the stress time and de-trapped quickly due to the shallow energy level of the defects.

  20. Improved thermal stability and electrical properties of atomic layer deposited HfO{sub 2}/AlN high-k gate dielectric stacks on GaAs

    SciTech Connect

    Cao, Yan-Qiang; Li, Xin; Zhu, Lin; Cao, Zheng-Yi; Wu, Di; Li, Ai-Dong

    2015-01-15

    The thermal stability and electrical properties of atomic layer deposited HfO{sub 2}/AlN high-k gate dielectric stacks on GaAs were investigated. Compared to HfO{sub 2}/Al{sub 2}O{sub 3} gate dielectric, significant improvements in interfacial quality as well as electrical characteristics after postdeposition annealing are confirmed by constructing HfO{sub 2}/AlN dielectric stacks. The chemical states were carefully explored by the x-ray photoelectron spectroscopy, which indicates the AlN layers effectively prevent from the formation of defective native oxides at elevated temperatures. In addition, it is found that NH{sub 3} plasma during AlN plasma-enhanced atomic layer deposition also has the self-cleaning effect as Al(CH{sub 3}){sub 3} in removing native oxides. The passivating AlN layers suppress the formation of interfacial oxide and trap charge, leading to the decrease of capacitance equivalent thickness after annealing. Moreover, HfO{sub 2}/AlN/GaAs sample has a much lower leakage current density of 2.23 × 10{sup −4} A/cm{sup 2} than HfO{sub 2}/Al{sub 2}O{sub 3}/GaAs sample of 2.58 × 10{sup −2} A/cm{sup 2}. For the HfO{sub 2}/AlN/GaAs sample annealed at 500 °C, it has a lowest interface trap density value of 2.11 × 10{sup 11} eV{sup −1} cm{sup −2}. These results indicate that adopting HfO{sub 2}/AlN dielectric stacks may be a promising approach for the realization of high quality GaAs-based transistor devices.

  1. Preliminary results on low power sigmoid neuron transistor response in 28 nm high-k metal gate Fully Depleted SOI technology

    NASA Astrophysics Data System (ADS)

    Galy, Ph.; Dehan, P.; Jimenez, J.; Heitz, B.

    2013-11-01

    The purpose of this paper is to describe a preliminary approach to achieve a sigmoid neuron transistor response using the 28 nm high-k metal gate Fully Depleted SOI (FDSOI) technology. It is well known that a neural network is an ambitious way to handle signal and/or data flow. Of interest also is the 'learning phase' of the proposed structure. However, the major difficulty of such structures, where the elementary device is a "Neuron Design (ND)" is in their integration. The elementary ND is based upon a circuit with at least ten interconnected CMOS transistors in order to obtain a sigmoid response activation function (in this example) with multiple inputs typically as per the McCulloch and Pitts model. Given that a large number of NDs are required to build an Artificial Neural Network (ANN), the power consumption of such a structure is a key topic that is also addressed. Another open question concerns the dispersion response due to process variability. This study reports on a new single undoped Formal Neuron Transistor (NT) solution.

  2. Effect of atomic-arrangement matching on La{sub 2}O{sub 3}/Ge heterostructures for epitaxial high-k-gate-stacks

    SciTech Connect

    Kanashima, T. Zenitaka, M.; Kajihara, Y.; Yamada, S.; Hamaya, K.; Nohira, H.

    2015-12-14

    We demonstrate a high-quality La{sub 2}O{sub 3} layer on germanium (Ge) as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La{sub 2}O{sub 3}(001) and Ge(111). Structural analyses reveal that (001)-oriented La{sub 2}O{sub 3} layers were grown epitaxially only when we used Ge(111) despite low growth temperatures less than 300 °C. The permittivity (k) of the La{sub 2}O{sub 3} layer is roughly estimated to be ∼19 from capacitance-voltage (C-V) analyses in Au/La{sub 2}O{sub 3}/Ge structures after post-metallization-annealing treatments, although the C-V curve indicates the presence of carrier traps near the interface. By using X-ray photoelectron spectroscopy analyses, we find that only Ge–O–La bonds are formed at the interface, and the thickness of the equivalent interfacial Ge oxide layer is much smaller than that of GeO{sub 2} monolayer. We discuss a model of the interfacial structure between La{sub 2}O{sub 3} and Ge(111) and comment on the C-V characteristics.

  3. Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last high-k/metal-gate pMOSFETs

    NASA Astrophysics Data System (ADS)

    Qin, Changliang; Wang, Guilei; Hong, Peizhen; Liu, Jinbiao; Yin, Huaxiang; Yin, Haizhou; Ma, Xiaolong; Cui, Hushan; Lu, Yihong; Meng, Lingkuan; Xiang, Jinjuan; Zhong, Huicai; Zhu, Huilong; Xu, Qiuxia; Li, Junfeng; Yan, Jian; Zhao, Chao; Radamson, Henry H.

    2016-09-01

    In this paper, the technology of recessed embedded SiGe (e-SiGe) source/drain (S/D) module is optimized for the performance enhancement in 22 nm all-last high-k/metal-gate (HK/MG) pMOSFETs. Different Si recess-etch techniques were applied in S/D regions to increase the strain in the channel and subsequently, improve the performance of transistors. A new recess-etch method consists of a two-step etch method is proposed. This process is an initial anisotropic etch for the formation of shallow trench followed by a final isotropic etch. By introducing the definition of the upper edge distance (D) between the recessed S/D region and the channel region, the process advantage of the new approach is clearly presented. It decreases the value of D than those by conventional one-step isotropic or anisotropic etch of Si. Therefore, the series resistance is reduced and the channel strain is increased, which confirmed by the simulation results. The physical reason of D reducing is analyzed in brief. Applying this recess design, the implant conditions for S/D extension (SDE) are also optimized by using a two-step implantation of BF2 in SiGe layers. The overlap space between doping junction and channel region has great effect on the device's performance. The designed implantation profile decreases the overlap space while keeps a shallow junction depth for a controllable short channel effect. The channel resistance as well as the transfer ID-VG curves varying with different process conditions are demonstrated. It shows the drive current of the device with the optimized SDE implant condition and Si recess-etch process is obviously improved. The change trend of on-off current distributions extracted from a series of devices confirmed the conclusions. This study provides a useful guideline for developing high performance strained PMOS SiGe technology.

  4. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    NASA Astrophysics Data System (ADS)

    Liu, Hsi-Wen; Chang, Ting-Chang; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Kuan-Ju; Lu, Ying-Hsin; Lin, Chien-Yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-04-01

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  5. Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme

    NASA Astrophysics Data System (ADS)

    Veloso, Anabela; Boccardi, Guillaume; Ragnarsson, Lars-Åke; Higuchi, Yuichi; Arimura, Hiroaki; Lee, Jae Woo; Simoen, Eddy; Cho, Moon Ju; Roussel, Philippe J.; Paraschiv, Vasile; Shi, Xiaoping; Schram, Tom; Aik Chew, Soon; Brus, Stephan; Dangol, Anish; Vecchio, Emma; Sebaai, Farid; Kellens, Kristof; Heylen, Nancy; Devriendt, Katia; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Conard, Thierry; Vaesen, Inge; Richard, Olivier; Bender, Hugo; Athimulam, Raja; Chiarella, Thomas; Thean, Aaron; Horiguchi, Naoto

    2014-01-01

    We report on aggressively scaled replacement metal gate, high-k last (RMG-HKL) planar and multi-gate fin field-effect transistor (FinFET) devices, systematically investigating the impact of post high-k deposition thermal (PDA) and plasma (SF6) treatments on device characteristics, and providing a deeper insight into underlying degradation mechanisms. We demonstrate that: 1) substantially reduced gate leakage (JG) and noise can be obtained for both type of devices with PDA and F incorporation in the gate stack by SF6, without equivalent oxide thickness (EOT) penalty; 2) SF6 enables improved mobility and reduced interface trapped charge density (Nit) down to narrower fin devices [fin width (WFin) ≥ 5 nm], mitigating the impact of fin patterning and fin sidewall crystal orientations, while allowing a simplified dual-effective work function (EWF) CMOS scheme suitable for both device architectures; 3) PDA yields smaller, in absolute values, PMOS threshold voltage |VT|, and substantially improved reliability behavior due to reduction of bulk defects.

  6. Electrical properties of Ge metal–oxide–semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti

    NASA Astrophysics Data System (ADS)

    Huoxi, Xu; Jingping, Xu

    2016-06-01

    LaON, LaTiO and LaTiON films are deposited as gate dielectrics by incorporating N or/and Ti into La2O3 using the sputtering method to fabricate Ge MOS capacitors, and the electrical properties of the devices are carefully examined. LaON/Ge capacitors exhibit the best interface quality, gate leakage property and device reliability, but a smaller k value (14.9). LaTiO/Ge capacitors exhibit a higher k value (22.7), but a deteriorated interface quality, gate leakage property and device reliability. LaTiON/Ge capacitors exhibit the highest k value (24.6), and a relatively better interface quality (3.1 × 1011 eV‑1 cm‑2), gate leakage property (3.6 × 10‑3 A/cm2 at V g = 1 V + V fb) and device reliability. Therefore, LaTiON is more suitable for high performance Ge MOS devices as a gate dielectric than LaON and LaTiO materials. Project supported by the National Natural Science Foundation of China (No. 61274112), the Natural Science Foundation of Hubei Province (No. 2011CDB165), and the Scientific Research Program of Huanggang Normal University (No. 2012028803).

  7. Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high- k LaTiON gate dielectric

    NASA Astrophysics Data System (ADS)

    Xu, H. X.; Xu, J. P.; Li, C. X.; Chan, C. L.; Lai, P. T.

    2010-06-01

    Ge Metal-Oxide-Semiconductor (MOS) capacitors with LaON gate dielectric incorporating different Ti contents are fabricated and their electrical properties are measured and compared. It is found that Ti incorporation can increase the dielectric permittivity, and the higher the Ti content, the larger is the permittivity. However, the interfacial and gate-leakage properties become poorer as the Ti content increases. Therefore, optimization of Ti content is important in order to obtain a good trade-off among the electrical properties of the device. For the studied range of the Ti/La2O3 ratio, a suitable Ti/La2O3 ratio of 14.7% results in a high relative permittivity of 24.6, low interface-state density of 3.1×1011 eV-1 cm-2, and relatively low gate-leakage current density of 2.0×10-3 A cm-2 at a gate voltage of 1 V.

  8. Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

    SciTech Connect

    Kao, Tsung-Hsien; Chang, Shoou-Jinn Fang, Yean-Kuen; Huang, Po-Chin; Wu, Chung-Yi; Wu, San-Lein

    2014-08-11

    In this study, the impact of aluminum ion implantation (Al I/I) on random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect-transistors (pMOSFETs) was investigated. The trap parameters of HK/MG pMOSFETs with Al I/I, such as trap energy level, capture time and emission time, activation energies for capture and emission, and trap location in the gate dielectric, were determined. The configuration coordinate diagram was also established. It was observed that the implanted Al could fill defects and form a thin Al{sub 2}O{sub 3} layer and thus increase the tunneling barrier height for holes. It was also observed that the trap position in the Al I/I samples was lower due to the Al I/I-induced dipole at the HfO{sub 2}/SiO{sub 2} interface.

  9. Impact of parylene-C thickness on performance of KTaO3 field-effect transistors with high-k oxide/parylene-C hybrid gate dielectric

    NASA Astrophysics Data System (ADS)

    Wei, Tingting; Fujiwara, Kohei; Kanki, Teruo; Tanaka, Hidekazu

    2016-01-01

    The proposal of a hybrid gate dielectric systematically modulated with low-k material layer has been shown to be a promising strategy in the development of low-consumption field-effect transistors (FETs) with high performance. In this work, by fabricating KTaO3 FETs containing Y-doped Ta2O5/parylene-C hybrid gate dielectrics with different ratios of component thicknesses, we explored the dependence of the transistor electrical properties on the parylene-C layer thickness. Based on the results and analysis, an optimized transistor performance was achieved with an appropriate Y-doped Ta2O5/parylene-C thickness ratio from the point of view on low voltage operation. This study contributes to provide guidance for future device design and applications.

  10. Structure, sodium ion role, and practical issues for β-alumina as a high-k solution-processed gate layer for transparent and low-voltage electronics.

    PubMed

    Zhang, Bo; Liu, Yu; Agarwala, Shweta; Agarwal, Shweta; Yeh, Ming-Ling; Katz, Howard E

    2011-11-01

    Sodium β-alumina (SBA)-based gate dielectric films have been developed for all solution-processed, transparent and low voltage field-effect transistors (FETs). Its high dielectric constant has been ascribed to sodium (Na+) ions in the crystal structure; however, there are no published experimental results concerning the contribution of Na+ ions to the dielectric behavior, and the degree of crystallinity of the thin films. In addition, as an ionic conductor, β-alumina could give rise to some issues such as leakage current caused by Na diffusion, threshold voltage shift due to interface charge accumulation and longer response time due to slower polarization of the Na+ ions. This paper will address these issues using zinc tin oxide (ZTO) FETs, and propose possible measures to further improve SBA-based gate materials for electronic devices. PMID:21978249

  11. Enhanced Breakdown Reliability and Spatial Uniformity of Atomic Layer Deposited High-k Gate Dielectrics on Graphene via Organic Seeding Layers

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Filippone, Stephen; Karmel, Hunter; Johns, James; Alaboson, Justice; Marks, Tobin; Lauhon, Lincoln; Hersam, Mark

    2013-03-01

    Ultra-thin high- κ top-gate dielectrics are essential for high-speed graphene-based nanoelectronic circuits. Motivated by the need for high reliability and spatial uniformity, we report here the first statistical analysis of the breakdown characteristics of dielectrics grown on graphene. Based on these measurements, a rational approach is devised that simultaneously optimizes the gate capacitance and the key parameters of large-area uniformity and dielectric strength. In particular, vertically heterogeneous oxide stacks grown via atomic-layer deposition (ALD) seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) organic monolayer result in improved reliability (Weibull shape parameter β > 25) compared to the control dielectric directly grown on graphene without PTCDA (β < 1). The optimized sample also showed a large breakdown strength (Weibull scale parameter, EBD > 7 MV/cm) that is comparable to that of the control dielectric grown on Si substrates.

  12. The role of ZrN capping layer deposited on ultra-thin high-k Zr-doped yttrium oxide for metal-gate metal–insulator–semiconductor applications

    SciTech Connect

    Juan, Pi-Chun; Mong, Fan-Chen; Huang, Jen-Hung

    2013-08-28

    Metal-gate MIS structures with and without ZrN capping layer on high-k Y{sub 2}O{sub 3}:Zr/Y{sub 2}O{sub 3} stack were fabricated. The binding energies and depth profiles were investigated by x-ray photoelectron spectroscopy (XPS). The x-ray diffraction (XRD) patterns were compared. It is found that Ti out-diffusion into Zr-based high-k dielectric becomes lesser with the insertion of ZrN capping layer. The electrical properties of current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured in the postannealing temperature range of 550–850 °C. According to the defect reaction model, Zr cation vacancies are associated with the concentration of Ti ion by a transition from +3 to +2 states. The amount of Zr cation vacancies is quantified and equal to a half of Ti substitution amount at Zr site. The reduction in cation vacancies at high temperatures can well explain the decrease in ΔV{sub FB} for samples with ZrN layer. In contrast, an excess of Ti outdiffusion will produce the interstitial defects in high-k films without ZrN capping.

  13. In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

    NASA Astrophysics Data System (ADS)

    Tsai, Meng-Chen; Lee, Min-Hung; Kuo, Chin-Lung; Lin, Hsin-Chih; Chen, Miin-Jang

    2016-11-01

    Amorphous and crystalline ZrO2 gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (Jg) of ∼7 × 10-4 A/cm2 with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiOxNy in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO2 from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar Jg of ∼1.4 × 10-5 A/cm2 as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO2 gate dielectrics, and the nitrogen incorporation at the top of crystalline ZrO2 is an effective approach to scale the CET and Jg, as well as to improve the reliability.

  14. Impact of the TiN barrier layer on the positive bias temperature instabilities of high-k/metal-gate field effect transistors

    NASA Astrophysics Data System (ADS)

    Huang, Da-Cheng; Gong, Jeng; Huang, Chih-Fang; Chung, Steve S.

    2015-04-01

    This study examined the impact of positive bias temperature instability (PBTI) on n-channel metal-oxide-semiconductor field-effect transistor (n-MOSFET) with TiN barrier layer sandwiched between metal gate electrode and HfO2 dielectric. The experimental results clearly demonstrate that the diffusion mechanism of oxygen and nitrogen as a result of the post metallization treatment was the root cause of the PBTI. In this mechanism, the oxygen during the post metallization annealing (PMA) was diffused into TiN layer and replaced the nitrogen in the TiN layer. Subsequently, these replaced nitrogens were diffused into the HfO2, from which these replaced nitrogen atoms were used to passivate the defects in the HfO2. Results show that by increasing the thickness of TiN barrier layer, the driving current and the PBTI of n-MOSFET can be greatly improved. The larger the thickness of the TiN layer is, the better the PBTI reliability becomes.

  15. Interface engineering and reliability characteristics of hafnium dioxide with poly silicon gate and dual metal (ruthenium-tantalum alloy, ruthenium) gate electrode for beyond 65 nm technology

    NASA Astrophysics Data System (ADS)

    Kim, Young-Hee

    Chip density and performance improvements have been driven by aggressive scaling of semiconductor devices. In both logic and memory applications, SiO 2 gate dielectrics has reached its physical limit, direct tunneling resulting from scaling down of dielectrics thickness. Therefore high-k dielectrics have attracted a great deal of attention from industries as the replacement of conventional SiO2 gate dielectrics. So far, lots of candidate materials have been evaluated and Hf-based high-k dielectrics were chosen to the promising materials for gate dielectrics. However, lots of issues were identified and more thorough researches were carried out on Hf-based high-k dielectrics. For instances, mobility degradation, charge trapping, crystallization, Fermi level pinning, interface engineering, and reliability studies. In this research, reliability study of HfO2 were explored with poly gate and dual metal (Ru-Ta alloy, Ru) gate electrode as well as interface engineering. Hard breakdown and soft breakdown were compared and Weibull slope of soft breakdown was smaller than that of hard breakdown, which led to a potential high-k scaling issue. Dynamic reliability has been studied and the combination of trapping and detrapping contributed the enhancement of lifetime projection. Polarity dependence was shown that substrate injection might reduce lifetime projection as well as it increased soft breakdown behavior. Interface tunneling mechanism was suggested with dual metal gate technology. Soft breakdown (l st breakdown) was mainly due to one layer breakdown of bi-layer structure. Low weibull slope was in part attributed to low barrier height of HfO 2 compared to interface layer. Interface layer engineering was thoroughly studied in terms of mobility, swing, and short channel effect using deep sub-micron MOSFET devices. In fact, Hf-based high-k dielectrics could be scaled down to below EOT of ˜10A and it successfully achieved the competitive performance goals. However, it is

  16. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

    NASA Astrophysics Data System (ADS)

    Xu, Hao; Yang, Hong; Luo, Wei-Chun; Xu, Ye-Feng; Wang, Yan-Rong; Tang, Bo; Wang, Wen-Wu; Qi, Lu-Wei; Li, Jun-Feng; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2016-08-01

    The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it/N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

  17. Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation.

    PubMed

    Wang, Jingli; Li, Songlin; Zou, Xuming; Ho, Johnny; Liao, Lei; Xiao, Xiangheng; Jiang, Changzhong; Hu, Weida; Wang, Jianlu; Li, Jinchai

    2015-11-25

    A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2 , and multilayered samples are less susceptible than monolayer ones. PMID:26426344

  18. The effects of STI induced mechanical strain on GIDL current in Hf-based and SiON MOSFETs

    NASA Astrophysics Data System (ADS)

    Cheng, C. Y.; Fang, Y. K.; Liao, J. C.; Wang, T. J.; Hou, Y. T.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S.

    2009-08-01

    The effects of shallow trench isolation (STI) induced mechanical strain on gate induced drain leakage (GIDL) current in Hf-based and SiON n-type metal oxide semiconductor field effect transistors (nMOSFETs) are investigated in detail. With T-CAD simulator, the compressive strain is found to increase with decreasing active area length. The STI-induced mechanical strain induces band narrowing and increases intrinsic carrier concentration, thus enhancing GIDL current via both trap-assisted tunneling and band-to-band tunneling. In addition, the HfO 2 gated nMOSFET has higher strain sensitivity than that of the SiON gated device for the higher density of interface states induced by the mechanical strain. Finally, the symmetric layout shows a higher ability to suppress the STI-enhanced GIDL current with the same active area length.

  19. Plasma etching of Hf-based high-k thin films. Part III. Modeling the reaction mechanisms

    SciTech Connect

    Martin, Ryan M.; Chang, Jane P.

    2009-03-15

    A generalized etch rate model was formulated to describe metal oxide etching in complex plasma chemistries, based on the understanding gained from detailed plasma characterization and experimental investigation into the metal oxide etching mechanisms. Using a surface site balance-based approach, the correct etch rate dependencies on neutral-to-ion flux ratio, ion energy, competing deposition and etching reaction pathways, and film properties were successfully incorporated into the model. The applicability of the model was assessed by fitting to experimental etch rate data in both Cl{sub 2} and BCl{sub 3} chemistries. Plasma gas phase analysis as well as etch and deposition rate measurements were used to calculate initial values and appropriate ranges for model parameter variation. Physically meaningful parameter values were extracted from the modeling fitting to the experimental data, thereby demonstrating the applicability of this model in assessing the plasma etching of other complex materials systems.

  20. Plasma etching of Hf-based high-k thin films. Part II. Ion-enhanced surface reaction mechanisms

    SciTech Connect

    Martin, Ryan M.; Blom, Hans-Olof; Chang, Jane P.

    2009-03-15

    The mechanism for ion-enhanced chemical etching of hafnium aluminate thin films in Cl{sub 2}/BCl{sub 3} plasmas was investigated in this work, specifically how the film composition, ion energy, and plasma chemistry determine their etch rates. Several compositions of Hf{sub 1-x}Al{sub x}O{sub y} thin films ranging from pure HfO{sub 2} to pure Al{sub 2}O{sub 3} were etched in BCl{sub 3}/Cl{sub 2} plasmas and their etch rates were found to scale with {radical}(E{sub ion}) in both Cl{sub 2} and BCl{sub 3} plasmas. In Cl{sub 2} plasmas, a transition point was observed around 50 eV, where the etch rate was significantly enhanced while the linear dependence to {radical}(E{sub ion}) was maintained, corresponding to a change in the removal of fully chlorinated to less chlorinated reaction products. In BCl{sub 3} plasma, deposition dominates at ion energies below 50 eV, while etching occurs above that energy with an etch rate of three to seven times that in Cl{sub 2}. The faster etch rate in BCl{sub 3} was attributed to a change in the dominant ion from Cl{sub 2}{sup +} in Cl{sub 2} plasma to BCl{sub 2}{sup +} in BCl{sub 3}, which facilitated the formation of more volatile etch products and their removal. The surface chlorination (0-3 at. %) was enhanced with increasing ion energy while the amount of boron on the surface increases with decreasing ion energy, highlighting the effect of different plasma chemistries on the etch rates, etch product formation, and surface termination.

  1. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    NASA Astrophysics Data System (ADS)

    Yu, Ai-Fang; Qi, Qiong; Jiang, Peng; Jiang, Chao

    2009-07-01

    Carrier mobility enhancement from 0.09 to 0.59 cm2/Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski-Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility.

  2. Thermally deposited Ag-doped CdS thin film transistors with high-k rare-earth oxide Nd{sub 2}O{sub 3} as gate dielectric

    SciTech Connect

    Gogoi, P.

    2013-03-15

    The performance of thermally deposited CdS thin film transistors doped with Ag has been reported. Ag-doped CdS thin films have been prepared using chemical method. High dielectric constant rare earth oxide Nd{sub 2}O{sub 3} has been used as gate insulator. The thin film trasistors are fabricated in coplanar electrode structure on ultrasonically cleaned glass substrates with a channel length of 50 {mu}m. The thin film transistors exhibit a high mobility of 4.3 cm{sup 2} V{sup -1} s{sup -1} and low threshold voltage of 1 V. The ON-OFF ratio of the thin film transistors is found as 10{sup 5}. The TFTs also exhibit good transconductance and gain band-width product of 1.15 Multiplication-Sign 10{sup -3} mho and 71 kHz respectively.

  3. Dielectric relaxation of high-k oxides

    PubMed Central

    2013-01-01

    Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics. For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material. It was attributed to the enhancement of the correlations among polar nanodomain. The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary. PMID:24180696

  4. Assessment of technological and geometrical device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs

    NASA Astrophysics Data System (ADS)

    Koyama, M.; Cassé, M.; Barraud, S.; Ghibaudo, G.; Iwai, H.; Faynot, O.; Reimbold, G.

    2015-06-01

    A study of the gate oxide/channel interface quality in ultra-scaled SOI omega-gate nanowire NMOS FETs with cross-section as small as 10 nm × 10 nm is experimentally presented by low-frequency noise measurements. The noise study has been efficiently applied for the characterization of various technological parameters, including strained channel, additional hydrogen anneal, or channel orientation difference. A method for rigorous contribution assessment of the two oxide/channel interfaces (top surface vs. side-walls) is also demonstrated. Quality of the interface is slightly altered among the 4-types of technological parameters and the structural variety down to nanowire. However, an excellent quality of Hf-based high-k/metal gate stack is observed and sustained in all the devices. In particular, efficient tensile strain stressor is demonstrated with high enhancement of the NMOS FET performance and preserved 1/f noise performance fulfilling the requirement for future CMOS logic node stated in the international technology roadmap for semiconductors.

  5. Reactions for yttrium silicate high-k dielectrics

    NASA Astrophysics Data System (ADS)

    Chambers, James Joseph

    The continued scaling of metal-oxide-semiconductor-field-effect-transistors (MOSFETs) will require replacing the silicon dioxide gate dielectric with an alternate high dielectric constant (high-k) material. We have exploited the high reactivity of yttrium with both silicon and oxygen to form yttrium silicate high-k dielectrics. Yttrium silicate films with composition of (Y 2O3)x ·(SiO2)1-x and x = 0.32 to 0.87 are formed by oxidizing yttrium on silicon where yttrium reacts concurrently with silicon and oxygen. The competition between silicon and oxygen for yttrium is studied using X-ray photoelectron spectroscopy (XPS) and medium energy ion scattering (MEIS). The initial yttrium thickness mediates the silicon consumption, and a critical thickness (˜40--80 A) exists below which silicon is consumed to form yttrium silicate and above which Y2O3 forms without silicon incorporation. Engineered interfaces modify the silicon consumption, and a nitrided silicon interface results in film with composition close to Y2O3. The silicon consumption also depends on the oxidation temperature, and oxidation at higher temperature generally results in greater silicon incorporation with an activation energy of 0.3--0.5 eV. Yttrium silicate films (˜40 A) formed by oxidation of yttrium on silicon have an amorphous microstructure and an equivalent silicon dioxide thickness of ˜12 A with leakage current <1 A/cm2. Yttrium silicate formation on silicon is also demonstrated using plasma oxidation of yttrium on silicon, reactive sputtering of yttrium and annealing/oxidation of yttrium on thermal SiO 2. The interface reactions described here for yttrium are expected to be active during both physical and chemical vapor deposition of other high-k dielectrics containing Hf, Zr and La.

  6. Charge Trapping Flash Memory With High-k Dielectrics

    NASA Astrophysics Data System (ADS)

    Eun, Dong Seog

    2011-12-01

    High capacity and affordable price of flash memory make portable electronic devices popular, which in turn stimulates the further scaling down effort of the flash memory cells. Indeed the flash memory cells have been scaling down aggressively and face several crucial challenges. As a result, the technology trend is shifting from the floating-gate cell to the charge-trap cell in order to overcome fatal interference problems between cells. There are critical problems in the charge-trap memory cell which will become main-stream in the near future. The first potential problem is related to the memory retention which is degraded by the charge leakage through thin tunnel dielectrics. The second is the reduction of charge-storage capacity in the scaled down SiN trapping layer. The third is the low operation-efficiency resulting from the methods used to solve the first two problems. Using high-k tunnel dielectrics can solve the first problem. The second problem can be overcome by adopting a high-k trapping dielectric. The dielectric constant of the blocking layer must be higher than those of the tunnel dielectric and the trapping dielectric in order to maintain operation efficiency. This dissertation study is focused on adopting high-k dielectrics in all three of the aforementioned layers for figure generations of flash memory technology. For the high-k tunnel dielectric, the MAD Si3N4 and the MAD Al2O3 are used to fabricate the MANNS structure and the MANAS structure. The MANNS structure has the advantage of reducing the erase voltage due to its low barrier height for holes. In addition, the retention characteristic of the MANAS structure is not sensitive to temperature. The reason is that the carrier transport in MAD Al2O3 is dominated by F-N tunneling, which is nearly independent of temperature. Adopting TiOx as the trapping dielectric forms the MATAS structure. Although the charge capacity of TiOx is not very high, the operating voltage can be reduced to less than 10V

  7. HF-based etching processes for improving laser damage resistance of fused silica optical surfaces

    SciTech Connect

    Suratwala, T I; Miller, P E; Bude, J D; Steele, R A; Shen, N; Monticelli, M V; Feit, M D; Laurence, T A; Norton, M A; Carr, C W; Wong, L L

    2010-02-23

    The effect of various HF-based etching processes on the laser damage resistance of scratched fused silica surfaces has been investigated. Conventionally polished and subsequently scratched fused silica plates were treated by submerging in various HF-based etchants (HF or NH{sub 4}F:HF at various ratios and concentrations) under different process conditions (e.g., agitation frequencies, etch times, rinse conditions, and environmental cleanliness). Subsequently, the laser damage resistance (at 351 or 355 nm) of the treated surface was measured. The laser damage resistance was found to be strongly process dependent and scaled inversely with scratch width. The etching process was optimized to remove or prevent the presence of identified precursors (chemical impurities, fracture surfaces, and silica-based redeposit) known to lead to laser damage initiation. The redeposit precursor was reduced (and hence the damage threshold was increased) by: (1) increasing the SiF{sub 6}{sup 2-} solubility through reduction in the NH4F concentration and impurity cation impurities, and (2) improving the mass transport of reaction product (SiF{sub 6}{sup 2-}) (using high frequency ultrasonic agitation and excessive spray rinsing) away from the etched surface. A 2D finite element crack-etching and rinsing mass transport model (incorporating diffusion and advection) was used to predict reaction product concentration. The predictions are consistent with the experimentally observed process trends. The laser damage thresholds also increased with etched amount (up to {approx}30 {micro}m), which has been attributed to: (1) etching through lateral cracks where there is poor acid penetration, and (2) increasing the crack opening resulting in increased mass transport rates. With the optimized etch process, laser damage resistance increased dramatically; the average threshold fluence for damage initiation for 30 {micro}m wide scratches increased from 7 to 41 J/cm{sup 2}, and the statistical

  8. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    NASA Astrophysics Data System (ADS)

    Consiglio, Steven P.

    To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

  9. Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

    SciTech Connect

    Lin, Chi-Chou; Kuo, Yue

    2014-02-28

    Metal-oxide-semiconductor capacitors made of the nanocrystalline cadmium selenide nc-CdSe embedded Zr-doped HfO{sub 2} high-k stack on the p-type silicon wafer have been fabricated and studied for their charge trapping, detrapping, and retention characteristics. Both holes and electrons can be trapped to the nanocrystal-embedded dielectric stack depending on the polarity of the applied gate voltage. With the same magnitude of applied gate voltage, the sample can trap more holes than electrons. A small amount of holes are loosely trapped at the nc-CdSe/high-k interface and the remaining holes are strongly trapped to the bulk nanocrystalline CdSe site. Charges trapped to the nanocrystals caused the Coulomb blockade effect in the leakage current vs. voltage curve, which is not observed in the control sample. The addition of the nanocrystals to the dielectric film changed the defect density and the physical thickness, which are reflected on the leakage current and the breakdown voltage. More than half of the originally trapped holes can be retained in the embedded nanocrystals for more than 10 yr. The nanocrystalline CdSe embedded high-k stack is a useful gate dielectric for this nonvolatile memory device.

  10. Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack

    NASA Astrophysics Data System (ADS)

    Bhuyian, M. N.; Sengupta, R.; Vurikiti, P.; Misra, D.

    2016-05-01

    This work evaluates the defects in high quality atomic layer deposited (ALD) HfAlOx with extremely low Al (<3% Al/(Al + Hf)) incorporation in the Hf based high-k dielectrics. The defect activation energy estimated by the high temperature current voltage measurement shows that the charged oxygen vacancies, V+/V2+, are the primary source of defects in these dielectrics. When Al is added in HfO2, the V+ type defects with a defect activation energy of Ea ˜ 0.2 eV modify to V2+ type to Ea ˜ 0.1 eV with reference to the Si conduction band. When devices were stressed in the gate injection mode for 1000 s, more V+ type defects are generated and Ea reverts back to ˜0.2 eV. Since Al has a less number of valence electrons than do Hf, the change in the co-ordination number due to Al incorporation seems to contribute to the defect level modifications. Additionally, the stress induced leakage current behavior observed at 20 °C and at 125 °C demonstrates that the addition of Al in HfO2 contributed to suppressed trap generation process. This further supports the defect engineering model as reduced flat-band voltage shifts were observed at 20 °C and at 125 °C.

  11. Hard magnetic property enhancement of Co{sub 7}Hf-based ribbons by boron doping

    SciTech Connect

    Chang, H. W.; Liao, M. C.; Shih, C. W.; Chang, W. C.; Yang, C. C.; Hsiao, C. H.; Ouyang, H.

    2014-11-10

    Hard magnetic property enhancement of melt spun Co{sub 88}Hf{sub 12} ribbons by boron doping is demonstrated. B-doping could not only remarkably enhance the magnetic properties from energy product ((BH){sub max}) of 2.6 MGOe and intrinsic coercivity ({sub i}H{sub c}) of 1.5 kOe for B-free Co{sub 88}Hf{sub 12} ribbons to (BH){sub max} = 7.7 MGOe and {sub i}H{sub c} = 3.1 kOe for Co{sub 85}Hf{sub 12}B{sub 3} ribbons but also improve the Curie temperature (T{sub C}) of 7:1 phase. The (BH){sub max} value achieved in Co{sub 85}Hf{sub 12}B{sub 3} ribbons is the highest in Co-Hf alloy ribbons ever reported, which is about 15% higher than that of Co{sub 11}Hf{sub 2}B ribbons spun at 16 m/s [M. A. McGuire, O. Rios, N. J. Ghimire, and M. Koehler, Appl. Phys. Lett. 101, 202401 (2012)]. The structural analysis confirms that B enters the orthorhombic Co{sub 7}Hf (7:1) crystal structure as interstitial atoms, forming Co{sub 7}HfB{sub x}, in the as-spun state. Yet B may diffuse out from the 7:1 phase after post-annealing, leading to the reduction of Curie temperature and the magnetic properties. The uniformly refined microstructure with B-doping results in high remanence (B{sub r}) and improves the squareness of demagnetization curve. The formation of interstitial-atom-modified Co{sub 7}HfB{sub x} phase and the microstructure refinement are the main reasons to give rise to the enhancement of hard magnetic properties in the B-containing Co{sub 7}Hf-based ribbons.

  12. Gate dielectric scaling in MOSFETs device

    NASA Astrophysics Data System (ADS)

    Jing, K. Hui; Arshad, M. K. Md.; Huda, A. R. N.; Ruslinda, A. R.; Gopinath, Subash C. B.; M. Nuzaihan M., N.; Ayub, R. M.; Fathil, M. F. M.; Othman, Noraini; Hashim, U.

    2016-07-01

    Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a basic type of transistor to be used as a switch since 1959. Since then, the successful of MOSFET is due to good properties between silicon and silicon dioxide. The reduction of silicon oxide thickness provide further enhancement in device performance. At 90 and 65 nm technology nodes, the gate oxide could not be scaled anymore due to the direct tunneling effect resulting significant increase of leakage current. At 45 nm the high-k + metal gate has been introduced. Recently, the ferroelectric effect material is introduced which significantly reduce the gate leakage current. This paper review the evolution of gate dielectric scaling from the era of silicon dioxide to high-k + metal gate and ferroelectric effect material.

  13. Silicate formation and thermal stability of ternary rare earth oxides as high-k dielectrics

    SciTech Connect

    Elshocht, S. van; Adelmann, C.; Conard, T.; Delabie, A.; Franquet, A.; Nyns, L.; Richard, O.; Lehnen, P.; Swerts, J.; Gendt, S. de

    2008-07-15

    Hf-based dielectrics are currently being introduced into complementary metal oxide semiconductor transistors as replacement for SiON to limit gate leakage current densities. Alternative materials such as rare earth based dielectrics are of interest to obtain proper threshold voltages as well as to engineer a material with a high thermal stability. The authors have studied rare earth based dielectrics such as Dy{sub 2}O{sub 3}, DyHfO{sub x}, DyScO{sub x}, La{sub 2}O{sub 3}, HfLaO{sub x}, and LaAlO{sub x} by means of ellipsometry, time of flight secondary ion mass spectroscopy x-ray diffraction, and x-ray photoelectron spectroscopy. The authors show that ellipsometry is an easy and powerful tool to study silicate formation. For ternary rare earth oxides, this behavior is heavily dependent on the composition of the deposited layer and demonstrates a nonlinear dependence. The system evolves to a stable composition that is controlled by the thermal budget and the rare earth content of the layer. It is shown that silicate formation can lead to a severe overestimation of the thermal stability of ternary rare earth oxides.

  14. Indium diffusion through high-k dielectrics in high-k/InP stacks

    SciTech Connect

    Dong, H.; Cabrera, W.; Santosh KC,; Brennan, B.; Qin, X.; McDonnell, S.; Hinkle, C. L.; Cho, K.; Chabal, Y. J.; Galatage, R. V.; Zhernokletov, D.; Wallace, R. M.

    2013-08-05

    Evidence of indium diffusion through high-k dielectric (Al{sub 2}O{sub 3} and HfO{sub 2}) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a PO{sub x} rich interface.

  15. High-k shallow traps observed by charge pumping with varying discharging times

    SciTech Connect

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang; Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju; Wang, Bin-Wei; Cao, Xi-Xin; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu

    2013-11-07

    In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO{sub 2}/metal gate stacks. N{sub T}-V{sub high} {sub level} characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N{sub T} for extra contribution of I{sub cp} traps. N{sub T} is the number of traps, and I{sub cp} is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I{sub cp} traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti{sub x}N{sub 1−x} metal gate concentrations. Next, N{sub T}-V{sub high} {sub level} characteristic curves with different falling times (t{sub falling} {sub time}) and base level times (t{sub base} {sub level}) show that extra contribution of I{sub cp} traps decrease with an increase in t{sub falling} {sub time}. By fitting discharge formula for different t{sub falling} {sub time}, the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t{sub falling} {sub time}. This current cannot be measured by the charge pumping technique. Subsequent measurements of N{sub T} by charge pumping technique at t{sub base} {sub level} reveal a remainder of electrons trapped in high-k bulk shallow traps.

  16. Charge trapping at Pt/high- k dielectric (Ta 2O 5) interface

    NASA Astrophysics Data System (ADS)

    Stojanovska-Georgievska, L.; Novkovski, N.; Atanassova, E.

    2011-09-01

    A detailed analysis of the effects of constant low current injection was done, both in accumulation ( J=0.001-0.2 mA cm -2) and in inversion ( J=0.001-0.04 mA/cm 2). The samples under investigation were metal-insulator-silicon structures containing high- k dielectric Ta 2O 5 radio frequency sputtered on p-type Si wafers, with Pt metal gate electrodes. The obtained results were compared with the ones obtained for Al gate samples. This experiment confirms the occurrence of charge trapping in the case of high-work-function Pt as metal. The effect has been attributed to emitting of electrons into the Pt conduction band during which creation of empty traps in the dielectric occurs, which then attract electrons injected in the dielectric. In order to examine the reversibility of the process, successive short runs as well as long runs (up to 10000 s) were performed.

  17. 20. DETAIL VIEW OF NONSUBMERSIBLE TAINTER GATE, SHOWING GATE, GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    20. DETAIL VIEW OF NONSUBMERSIBLE TAINTER GATE, SHOWING GATE, GATE ARM, TRUNNION PIN, PIER AND GATE GAUGE, LOOKING WEST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 10, Guttenberg, Clayton County, IA

  18. 17. DETAIL VIEW OF NONSUBMERSIBLE TAINTER GATE, SHOWING GATES, GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    17. DETAIL VIEW OF NON-SUBMERSIBLE TAINTER GATE, SHOWING GATES, GATE ARMS, PIERS AND DAM BRIDGE, WITH ROLLER GATE HEADHOUSE IN BACKGROUND, LOOKING SOUTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 9, Lynxville, Crawford County, WI

  19. 20. DETAIL VIEW OF SUBMERSIBLE GATE, SHOWING GATE ARMS, GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    20. DETAIL VIEW OF SUBMERSIBLE GATE, SHOWING GATE ARMS, GATE PIERS, TRUNNION PIN AND GATE GAUGE, LOOKING NORTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  20. 21. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE, GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    21. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE, GATE ARM, TRUNNION PIN, PIER AND GATE GAUGE, LOOKING EAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 10, Guttenberg, Clayton County, IA

  1. Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides

    PubMed Central

    2011-01-01

    The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL) signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001) QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices. PMID:21711749

  2. Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface.

    PubMed

    Winter, Roy; Shekhter, Pini; Tang, Kechao; Floreano, Luca; Verdini, Alberto; McIntyre, Paul C; Eizenberg, Moshe

    2016-07-01

    One of the main challenges in the path to incorporating InGaAs based metal-oxide-semiconductor structures in nanoelectronics is the passivation of high-k/InGaAs interfaces. Here, the oxygen scavenging effect of thin Ti layers on high-k/InGaAs gate stacks was studied. Electrical measurements and synchrotron X-ray photoelectron spectroscopy measurements, with in situ metal deposition, were used. Oxygen removal from the InGaAs native oxide surface layer remotely through interposed Al2O3 and HfO2 layers observed. Synchrotron X-ray photoelectron spectroscopy has revealed a decrease in the intensity of InOx features relative to In in InGaAs after Ti deposition. The signal ratio decreases further after annealing. In addition, Ti 2p spectra clearly show oxidation of the thin Ti layer in the ultrahigh vacuum XPS environment. Using capacitance-voltage and conductance-voltage measurements, Pt/Ti/Al2O3/InGaAs and Pt/Al2O3/InGaAs capacitors were characterized both before and after annealing. It was found that the remote oxygen scavenging from the oxide/semiconductor interface using a thin Ti layer can influence the density of interface traps in the high-k/InGaAs interface. PMID:27282201

  3. Spectroscopic Study of Band Alignment in Alternative High-k MOS Dielectric Stacks

    NASA Astrophysics Data System (ADS)

    Bersch, E.; Rangan, S.; Garfunkel, E.; Bartynski, R. A.

    2007-03-01

    The study of high-k dielectrics and metal gate electrodes is critical to next generation MOSFETs. We have measured the band offsets of alternative MOS stacks using photoemission and inverse photoemission in the same chamber as well as synchrotron photoemission. At Rutgers, we have measured the valence and conduction band densities of states (DOS) and edges with UV photoemission and inverse photoemission, respectively, in situ. Using synchrotron photoemission we have measured the core level positions as well as the valence band DOS of clean and metallized dielectric/Si systems. The measurement of the chemical shifts of the core levels upon metallization enables us to evaluate the conduction band offset at the metal/dielectric interface. For Hf(x)Si(1-x)O(2), we find the conduction band offset (CBO) does not change as x is varied from 1 to 0.8, but the valence band offset increases by 0.4 eV. Titanium, aluminum and ruthenium were chosen as gate metals because of their prospective use as low and high workfunction metals in dual metal gate CMOS devices. We measured the CBO for the Ti, Al and Ru/Hf(x)Si(1-x)O(2) interfaces and found barriers involving Ti and Ru to be in good agreement with the interface gap state model, whereas the barrier involving Al deviated substantially from it due to the formation of an AlO(X) layer at the interface.

  4. 18. DETAIL VIEW OF NONSUBMERSIBLE TAINTER GATE, SHOWING GATES, GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    18. DETAIL VIEW OF NON-SUBMERSIBLE TAINTER GATE, SHOWING GATES, GATE ARMS, PIERS AND DAM BRIDGE, LOOKING SOUTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 9, Lynxville, Crawford County, WI

  5. 16. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE, GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    16. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE, GATE ARM, TRUNNION PIN AND PIER, LOOKING NORTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  6. High-K States as a Probe of Nuclear Structure

    NASA Astrophysics Data System (ADS)

    Dracoulis, G. D.

    High-K states played a key part in the discovery and understanding of deformed nuclei. An example is given of the recent use of high-K states as a signature of axially-symmetric prolate deformation in a nucleus which is predicted to show co-existence between spherical, oblate and prolate shapes. When associated bands can be identified, high-K states can also be used as a probe of pairing, and its modifiication of rotational motion. New results in 178W imply that the underlying rigid moment-of-inertia revealed when orbits are blocked to form multi-quasiparticle high-K states is substantially less than the “classical” rigid-body value. The corollary is that static pairing is quenched when only a few orbits are blocked. Recent measurements of g-factors in related high-K states in 179W allow the extraction of gR values whose behaviour as a function of seniority agrees with this suggestion.

  7. Analytical modeling and simulation of multigate FinFET devices and the impact of high-k dielectrics on short channel effects (SCEs)

    NASA Astrophysics Data System (ADS)

    Narendar, Vadthiya; Mishra, R. A.

    2015-09-01

    The Fin shaped Field Effect Transistor (FinFET), is a leading contender in modern microelectronics. Its unique structure allows to scale the device at sub-nanometer regime and to mimic the electrical characteristics of a MOSFET. A three-dimensional (3D) analytical modeling of SOI multigate (Gate-All-Around (GAA), Triple-Gate (TG) and Double-Gate (DG)) FinFETs and relative comparison among them is presented. The channel potential is derived from 3D Poisson's equation of each FinFET using the superposition method with appropriate boundary conditions, effective dimensions. The analytically modeled data are in good agreement with numerically simulated data of all the structures and the channel potential of GAA FinFET demonstrates the ameliorated electrostatic control over the other two structures. The impact of gate-stack (GS) high-k gate dielectrics on short channel effects (SCEs) of all aforementioned devices has been investigated with fin thickness (Tfin) variations. The GS C4 configuration reveals a significant suppression of SCEs in all FinFETs. It has been noticed that among the stated devices, the GAA FinFET with C4 configuration manifests the alleviated subthreshold swing (SS), drain induced barrier lowering (DIBL). In overall comparison, the SCEs are reasonably controlled with GS high-k gate dielectrics. The numerical simulations were performed on 3D ATLAS™.

  8. High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing

    PubMed Central

    Reddy, Bobby; Dorvel, Brian R.; Go, Jonghyun; Nair, Pradeep R.; Elibol, Oguz H.; Credo, Grace M.; Daniels, Jonathan S.; Chow, Edmond K. C.; Su, Xing; Varma, Madoo; Alam, Muhammad A.

    2011-01-01

    Over the last decade, field-effect transistors (FETs) with nanoscale dimensions have emerged as possible label-free biological and chemical sensors capable of highly sensitive detection of various entities and processes. While significant progress has been made towards improving their sensitivity, much is yet to be explored in the study of various critical parameters, such as the choice of a sensing dielectric, the choice of applied front and back gate biases, the design of the device dimensions, and many others. In this work, we present a process to fabricate nanowire and nanoplate FETs with Al2O3 gate dielectrics and we compare these devices with FETs with SiO2 gate dielectrics. The use of a high-k dielectric such as Al2O3 allows for the physical thickness of the gate dielectric to be thicker without losing sensitivity to charge, which then reduces leakage currents and results in devices that are highly robust in fluid. This optimized process results in devices stable for up to 8 h in fluidic environments. Using pH sensing as a benchmark, we show the importance of optimizing the device bias, particularly the back gate bias which modulates the effective channel thickness. We also demonstrate that devices with Al2O3 gate dielectrics exhibit superior sensitivity to pH when compared to devices with SiO2 gate dielectrics. Finally, we show that when the effective electrical silicon channel thickness is on the order of the Debye length, device response to pH is virtually independent of device width. These silicon FET sensors could become integral components of future silicon based Lab on Chip systems. PMID:21203849

  9. Thermally stable yttrium-scandium oxide high-k dielectrics deposited by a solution process

    NASA Astrophysics Data System (ADS)

    Hu, Wenbing; Frost, Bradley; Peterson, Rebecca L.

    2016-03-01

    We investigated the thermal stability of electrical properties in ternary alloy (Y x Sc1-x )2O3 high-k oxides as a function of yttrium fraction, x. The yttrium-scandium oxide dielectric films are deposited using a facile ink-based process. The oxides have a stoichiometry-dependent relative dielectric constant of 26.0 to 7.7 at 100 kHz, low leakage current density of 10-8 A·cm-2, high breakdown field of 4 MVṡcm-1, and interface trap density of 1012 cm-2·eV-1 with silicon. Compared with binary oxides, ternary alloys exhibit less frequency dispersion of the dielectric constant and a higher crystallization temperature. After crystallization is induced through a 900 °C anneal, ternary (Y0.6Sc0.4)2O3 films maintain their low leakage current and high breakdown field. In contrast, the electrical performance of the binary oxides significantly degrades following the same treatment. The solution-processed ternary oxide dielectrics demonstrated here may be used as high-k gate insulators in complementary metal-oxide semiconductor (CMOS) technologies, in novel electronic material systems and devices, and in printed, flexible thin film electronics, and as passivation layers for high power devices. These oxides may also be used as insulators in fabrication process flows that require a high thermal budget.

  10. Breakdown-induced thermochemical reactions in HfO2 high-κ/polycrystalline silicon gate stacks

    NASA Astrophysics Data System (ADS)

    Ranjan, R.; Pey, K. L.; Tung, C. H.; Tang, L. J.; Ang, D. S.; Groeseneken, G.; De Gendt, S.; Bera, L. K.

    2005-12-01

    The chemistry of dielectric-breakdown-induced microstructural changes in HfO2 high-κ/polycrystalline silicon gate nMOSFETs under constant voltage stress has been studied. Based on an electron energy loss spectrometry analysis, the hafnium and oxygen chemical bonding in the breakdown induced Hf-based compounds of a "ball-shaped" defect is found to be different compared to the stoichiometric HfO2 and SiO2. The formation of possibly HfSixOy and HfSix compounds in the "ball-shaped" defect is attributed to a thermochemical reaction triggered by the gate dielectric breakdown.

  11. The work function engineering and thermal stability of novel metal gate electrodes for advanced CMOS devices

    NASA Astrophysics Data System (ADS)

    Zhao, Penghui

    The continuous scaling of Complementary Metal Oxide Semiconductor (CMOS) integrated circuits requires the replacement of the conventional poly-silicon gate electrode and silicon dioxide gate dielectric with metal gate electrodes and high-agate dielectrics, respectively. The most critical requirements for alternative metal gates are proper work function and good thermal stability. This dissertation has focused on the effective work function and thermal stability of molybdenum-based metal gates (Mo, MoN, and MoSiN) and fully silicided (FUSI) NiSi metal gates. Capacitance-Voltage (C-V) and Current-Voltage (I-V) measurements of MOS capacitors were performed to investigate the electrical properties of molybdenum-based metal gates. Four-point probe resistivity measurements, Rutherford Backscattering Spectroscopy (RBS), X-ray Photoelectron Spectroscopy (XPS), High Resolution Transmission Electron Microscopy (HR-TEM), Electron Nanodiffraction analysis, X-ray Diffraction (XRD) and backside Secondary Ion Mass Spectroscopy (SIMS) methods were performed as well, to characterize the thermal stability of metal gate electrodes. The effective work function and thermal stability of molybdenum-based metal gates (Mo, MoN and MoSiN) on both SiO2 and Hf-based high-kappadielectrics have been evaluated systematically. The effects of silicon and nitrogen concentrations on the work function and thermal stability are discussed. The effective work function of molybdenum nitrides on both SiO2 and Hf-based high-kappadielectrics can be tuned to ˜4.4-4.5 eV, however, the thermal budgets should be less than 900°C 10 sec due to nitrogen loss and the phase transformation behavior of molybdenum nitrides. Silicon incorporation in the Mo-N system can improve the film thermal stability and diffusion barrier properties at the interface of metal gates/dielectrics due to the presence of Si-N bonds. By optimizing the film composition, the work function of MoSiN gates on SiO2 can be tuned for fully

  12. Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

    PubMed

    Zhang, Liangliang; Li, Huanglong; Guo, Yuzheng; Tang, Kechao; Woicik, Joseph; Robertson, John; McIntyre, Paul C

    2015-09-23

    Effective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding goal of research on germanium metal-oxide-semiconductor devices. In this paper, we use photoelectron spectroscopy to probe the formation of a GeO2 interface layer between an atomic layer deposited Al2O3 gate dielectric and a Ge(100) substrate during forming gas anneal (FGA). Capacitance- and conductance-voltage data were used to extract the interface trap density energy distribution. These results show selective passivation of interface traps with energies in the top half of the Ge band gap under annealing conditions that produce GeO2 interface layer growth. First-principles modeling of Ge/GeO2 and Ge/GeO/GeO2 structures and calculations of the resulting partial density of states (PDOS) are in good agreement with the experiment results. PMID:26334784

  13. Seeding atomic layer deposition of high-k dielectric on graphene with ultrathin poly(4-vinylphenol) layer for enhanced device performance and reliability

    NASA Astrophysics Data System (ADS)

    Cheol Shin, Woo; Yong Kim, Taek; Sul, Onejae; Jin Cho, Byung

    2012-07-01

    We demonstrate that ultrathin poly(4-vinylphenol) (PVP) acts as an effective organic seeding layer for atomic layer deposition (ALD) of high-k dielectric on large-scale graphene fabricated by chemical vapor deposition (CVD). While identical ALD conditions result in incomplete and rough dielectric deposition on CVD graphene, the reactive groups provided by the PVP seeding layer yield conformal and pinhole-free dielectric films throughout the large-scale graphene. Top-gate graphene field effect transistors fabricated with the high quality, PVP-seeded Al2O3 gate dielectric show superior carrier mobility and enhanced reliability performance, which are desirable for graphene nanoelectronics.

  14. FLOW GATING

    DOEpatents

    Poppelbaum, W.J.

    1962-12-01

    BS>This invention is a fast gating system for eiectronic flipflop circuits. Diodes connect the output of one circuit to the input of another, and the voltage supply for the receiving flip-flop has two alternate levels. When the supply is at its upper level, no current can flow through the diodes, but when the supply is at its lower level, current can flow to set the receiving flip- flop to the same state as that of the circuit to which it is connected. (AEC)

  15. A hetero-dielectric stack gate SOI-TFET with back gate and its application as a digital inverter

    NASA Astrophysics Data System (ADS)

    Mitra, Suman Kr.; Goswami, Rupam; Bhowmick, Brinda

    2016-04-01

    A Silicon based two dimensional (2D) hetero-dielectric stack gate SOI Tunneling Field Effect Transistor (SOI-TFET) with back-gate is proposed. Simulation results show that the proposed structure can be scaled down without affecting Subthreshold Swing unlike conventional TFETs with SiO2 as gate dielectric. On state of the device is independent of back-gate voltage unlike MOSFETs. The effects of gate lengths, lengths of high-k dielectric in lower stack (L) and back-gate voltages on the threshold voltage, Ion/Ioff and Subthreshold Swing (SS) of the SOI-TFET are analyzed. Capacitance components CGG, CGD, CGS are also observed and device shows good performance as an inverter. The fall time, overshoot and undershoot are not above 27 fs, 1.712% and 0.77% respectively considering mixed mode device and circuit simulation of capacitive loaded inverter.

  16. Modelling and extraction procedure for gate insulator and fringing gate capacitance components of an MIS structure

    NASA Astrophysics Data System (ADS)

    Tinoco, J. C.; Martinez-Lopez, A. G.; Lezama, G.; Mendoza-Barrera, C.; Cerdeira, A.; Estrada, M.

    2016-07-01

    CMOS technology has been guided by the continuous reduction of MOS transistors used to fabricate integrated circuits. Additionally, the use of high-k dielectrics as well as a metal gate electrode have promoted the development of nanometric MOS transistors. Under this scenario, the proper modelling of the gate capacitance, with the aim of adequately evaluating the dielectric film thickness, becomes challenging for nanometric metal-insulator-semiconductor (MIS) structures due to the presence of extrinsic fringing capacitance components which affect the total gate capacitance. In this contribution, a complete intrinsic–extrinsic model for gate capacitance under accumulation of an MIS structure, together with an extraction procedure in order to independently determine the different capacitance components, is presented. ATLAS finite element simulation has been used to validate the proposed methodology.

  17. Subthreshold analysis of nanoscale FinFETs for ultra low power application using high-k materials

    NASA Astrophysics Data System (ADS)

    Nirmal, D.; Vijayakumar, P.; Chella Samuel, P. Patrick; Jebalin, Binola K.; Mohankumar, N.

    2013-06-01

    Fin Field Effect Transistors (FinFETs) are used for Complementary Metal Oxide Semiconductor applications beyond the 45 nm node of the Semiconductor Industry Association (SIA) roadmap because of their excellent scalability and better immunity to short channel effects. This article examines the impact of high-k dielectrics on FinFETs. The FinFET device performance is analysed for On Current, Off Current, I on/I off ratio, drain induced barrier lowering, electrostatic potential along the channel, electric field along the channel, transconductance, output resistance, intrinsic gain, gate capacitance and transconductance generation factor, by replacing the conventional silicon dioxide gate dielectric material, with various high dielectric constant materials. Nanosize ZrO2 (zirconium-di-oxide) is found out to be the best alternative for SiO2 (silicon-di-oxide). It is also observed that the integration of high-k dielectrics in the devices significantly reduces the short channel effects and leakage current. The suitability of nanoscale FinFETs is observed with the help of an inverter circuit and their gain values are calculated for circuit applications.

  18. Novel gate-all-around polycrystalline silicon nanowire memory device with HfAlO charge-trapping layer

    NASA Astrophysics Data System (ADS)

    Lee, Ko-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan

    2014-01-01

    Gate-all-around (GAA) nanowire (NW) memory devices with a SiN- or Hf-based charge-trapping (CT) layer of the same thickness were studied in this work. The GAA NW devices were fabricated with planar thin-film transistors (TFTs) on the same substrate using a novel scheme without resorting to the use of advanced lithographic tools. Owing to their higher dielectric constant, the GAA NW devices with a HfO2 or HfAlO CT layer show greatly enhanced programming/erasing (P/E) efficiency as compared with those with a SiN CT layer. Furthermore, the incorporation of Al into the Hf-based dielectric increases the thermal stability of the CT layer, improving retention and endurance characteristics.

  19. Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides.

    PubMed

    Zeng, Qingfeng; Oganov, Artem R; Lyakhov, Andriy O; Xie, Congwei; Zhang, Xiaodong; Zhang, Jin; Zhu, Qiang; Wei, Bingqing; Grigorenko, Ilya; Zhang, Litong; Cheng, Laifei

    2014-02-01

    High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as a fitness function in conjunction with first-principles calculations and the global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO2 and HfO2, some of which correspond to known phases and some of which are new. The results allow us to propose characteristics (genes) common to high-fitness structures--these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO2-SiO2 system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue for discovering novel high-k dielectrics with both fixed and variable compositions, and will speed up the process of materials discovery. PMID:24508952

  20. Mechanical Design of the NSTX High-k Scattering Diagnostic

    SciTech Connect

    Feder, R.; Mazzucato, E.; Munsat, T.; Park, H,; Smith, D. R.; Ellis, R.; Labik, G.; Priniski, C.

    2005-09-26

    The NSTX High-k Scattering Diagnostic measures small-scale density fluctuations by the heterodyne detection of waves scattered from a millimeter wave probe beam at 280 GHz and {lambda}=1.07 mm. To enable this measurement, major alterations were made to the NSTX vacuum vessel and Neutral Beam armor. Close collaboration between the PPPL physics and engineering staff resulted in a flexible system with steerable launch and detection optics that can position the scattering volume either near the magnetic axis ({rho} {approx} .1) or near the edge ({rho} {approx} .8). 150 feet of carefully aligned corrugated waveguide was installed for injection of the probe beam and collection of the scattered signal in to the detection electronics.

  1. An effective approach for restraining electrochemical corrosion of polycrystalline silicon caused by an HF-based solution and its application for mass production of MEMS devices

    NASA Astrophysics Data System (ADS)

    Liu, Yunfei; Xie, Jing; Zhao, Hui; Luo, Wei; Yang, Jinling; An, Ji; Yang, Fuhua

    2012-03-01

    This paper presents a novel method to effectively protect the structural material polycrystalline silicon (polysilicon) from electrochemical corrosion, which often occurs when the MEMS device is released in HF-based solutions, especially when the device contains a noble metal. This corrosion seriously degrades the electrical and mechanical performance as well as the reliability of MEMS devices. In this method, a photoresist (PR) is employed to cover the noble metal, which is electrically coupled with the underlying polysilicon layer. This PR cover can effectually prevent an HF-based solution from diffusing through and arriving at the surface of the noble metal, thus cutting off the electrical current of the electrochemical corrosion reaction. The polysilicon is well protected for longer than 80 min in 49% concentrated HF solutions by a 3 µm-thick AZ 6130 PR film. This fabrication process is simple, reliable and suitable for mass production of high-end micromechanical disk resonators. Benefiting from the technology breakthrough mentioned above, a novel low-cost microfabrication method for disk resonators with high performance has been developed, and the VHF polysilicon disk resonators with resonance frequencies around 282 MHz and Q values larger than 2000 at atmosphere have been produced at wafer level.

  2. High-k Scattering and FIReTIP Diagnostic Upgrades for NSTX-U

    NASA Astrophysics Data System (ADS)

    Barchfeld, Robert; Scott, Evan; Domier, Calvin; Muscatello, Christopher; Riemenschneider, Paul; Sohrabi, Mohammad; Luhmann, Neville; Ren, Yang; Kaita, Robert

    2015-11-01

    A major upgrade to the High-k Scattering system is underway on NSTX-U, which is being transformed from a primarily toroidal detection geometry (for kr measurements) to a poloidal detection geometry (for kθ measurements) in which a probe beam is launched from Bay G and collected on Bay L. Combined with an increase in probing frequency to 693 GHz, the poloidal wavenumber sensitivity has been extended from kθ = 7 cm-1 up to 40 cm-1. The system will be installed and commissioned in 2016 with an initial 4-channel receiver, with plans to eventually upgrade to an 8x2 configuration, which can probe the plasma from the core out to the edge of the pedestal region. The Far Infrared Tangential Interferometer/Polarimeter (FIReTIP) system is being upgraded with field programmable gate array (FPGA) electronics to support real time feedback density control, and will be installed on Bay G this fall. Design and implementation details regarding both diagnostics will be presented. Work supported in part by U.S. DOE Grant DE-FG02-99ER54518 and DE-AC02-09CH1146.

  3. The energy-band alignment at molybdenum disulphide and high-k dielectrics interfaces

    SciTech Connect

    Tao, Junguang; Chai, J. W.; Zhang, Z.; Pan, J. S.; Wang, S. J.

    2014-06-09

    Energy-band alignments for molybdenum disulphide (MoS{sub 2}) films on high-k dielectric oxides have been studied using photoemission spectroscopy. The valence band offset (VBO) at monolayer MoS{sub 2}/Al{sub 2}O{sub 3} (ZrO{sub 2}) interface was measured to be 3.31 eV (2.76 eV), while the conduction-band offset (CBO) was 3.56 eV (1.22 eV). For bulk MoS{sub 2}/Al{sub 2}O{sub 3} interface, both VBO and CBO increase by ∼0.3 eV, due to the upwards shift of Mo 4d{sub z{sup 2}} band. The symmetric change of VBO and CBO implies Fermi level pinning by interfacial states. Our finding ensures the practical application of both p-type and n-type MoS{sub 2} based complementary metal-oxide semiconductor and other transistor devices using Al{sub 2}O{sub 3} and ZrO{sub 2} as gate materials.

  4. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Gate arm and gate mechanism. 234.255 Section 234... Maintenance, Inspection, and Testing Inspections and Tests § 234.255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall...

  5. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month....

  6. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month....

  7. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Gate arm and gate mechanism. 234.255 Section 234... Maintenance, Inspection, and Testing Inspections and Tests § 234.255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall...

  8. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month....

  9. Contactless analysis of electric dipoles at high-k/SiO2 interfaces by surface-charge-switched electron spectroscopy

    NASA Astrophysics Data System (ADS)

    Toyoda, S.; Fukuda, K.; Itoh, E.; Sugaya, H.; Morita, M.; Nakata, A.; Uchimoto, Y.; Matsubara, E.

    2016-05-01

    The continuous development of silicon devices has been supported by fundamental understanding of the two interfaces that predict the device properties: high-dielectric oxide (high-k)/SiO2 and SiO2/Si. In the absence of metal electrode fabrication, it is challenging to use spectroscopic approaches to deduce the electric dipoles in these interfaces for the prediction of electrical characteristics such as the leakage current and threshold voltage. Here, we propose a method to analyze the permanent dipole at the high-k/SiO2 interface by surface-charge-switched electron spectroscopy (SuCSES). An electron flood gun was used to switch the electrical polarity at the insulating surface to extract the interface-dipole contribution from the macroscopic dielectric polarization in the high-k/SiO2/Si stack structure. TaO3- nanosheet (TaNS) crystallites, which are a family of high-k tantalate materials deposited on the SiO2/Si substrates, were annealed to prepare a nanoscale model interface. The properties of this interface were examined as a function of annealing temperature across the crystalline-to-amorphous transition. Macroscopic dielectric polarization of the TaNS/SiO2/Si gate stack was found to exhibit a gradual decay that depended upon the quantum tunneling processes of induced carriers at the SiO2/Si interface. Additionally, the dipole at the high-k/thin-SiO2 interface abruptly changed by ˜0.4 eV before and after annealing at 400 °C, which may be the result of a decrease in conduction-band offsets at the high-k/Si interface. Thus, SuCSES can aid in determining the inherent valence-band offsets in dielectric interfaces by using X-ray photoelectron spectroscopy with high accuracy and precision. Furthermore, SuCSES can determine whether dielectric polarization, including the interfacial dipole, affects the experimental value of the band offsets.

  10. High-k lithium phosphorous oxynitride thin films

    NASA Astrophysics Data System (ADS)

    Fu, Zheng-Wen; Liu, Wen-Yuan; Li, Chi-Lin; Qin, Qi-Zong; Yao, Yin; Lu, Fang

    2003-12-01

    Lithium phosphorous oxynitride (Lipon) thin films have been fabricated onto n-Si substrate at room temperature by nitrogen plasma-assisted deposition of electron-beam reactive evaporated Li3PO4. The capacitance-voltage (C-V) and I-V characteristics of Al/Lipon/Si capacitors were measured. The accumulation, depletion, and inversion phenomena in the C-V curves of the as-deposited Lipon thin film could be clearly observed. The isothermal transient ionic current of Al/Lipon/Al as a function of time during voltage stepping from 0 to 3 V exhibits a large current response due to dipole orientation. The dielectric constant of Lipon thin films is found to be 16.6, and the leakage current density at an applied electric field of 5 kV/cm is about 6.0×10-7 A/cm2. These results suggest that lithium phosphorous oxynitride thin films are high-k materials. The incorporation of N into amorphous of Li3PO4 could significantly increase the dielectric constant of Lipon thin films.

  11. 21. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE ARM, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    21. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE ARM, GATE PIER, TRUNNION PIN AND GATE GAUGE, LOOKING SOUTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 9, Lynxville, Crawford County, WI

  12. A model for the frequency dispersion of the high-k metal-oxide-semiconductor capacitance in accumulation

    NASA Astrophysics Data System (ADS)

    Yao, B.; Fang, Z. B.; Zhu, Y. Y.; Ji, T.; He, G.

    2012-05-01

    High-frequency capacitance-voltage measurements have been made on metal-oxide-semiconductor capacitors by using single crystalline Er2O3 high-k gate dielectrics. Based on our analysis, it has been found that frequency dispersion of Er2O3 capacitance in accumulation decreases consistently with the increase of the frequency. A correction model is proposed to explain these frequency dispersion phenomena and the capacitance-frequency equations are obtained from the impedance expression of the equivalent circuit. Based on the simulated capacitance-frequency, it can be concluded that frequency dispersion of Er2O3 capacitance in accumulation originates from the existence of the parasitic resistances, the series resistances, and the formed SiOx interfacial layer.

  13. Low-voltage Organic Thin Film Transistors (OTFTs) with Solution-processed High-k Dielectric cum Interface Engineering

    NASA Astrophysics Data System (ADS)

    Su, Yaorong

    Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs), the high operation voltage resulting from the low gate areal capacitance of traditional SiO 2 remains a severe limitation that hinders OTFTs' development in practical applications. In this regard, developing new materials with high- k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. In this thesis, we first describe a simple solution-based method to fabricate a high-k bilayer Al2Oy/TiOx (ATO) dielectric system at low temperature. Then the dielectric properties of the ATO are characterized and discussed in detail. Furthermore, by employing the high-k ATO as gate dielectric, low-voltage copper phthalocyanine (CuPc) based OTFTs are successfully developed. Interestingly, the obtained low-voltage CuPc TFT exhibits outstanding electrical performance, which is even higher than the device fabricated on traditional low-k SiO2. The above results seem to be contradictory to the reported results due to the fact that high-k usually shows adverse effect on the device performance. This abnormal phenomenon is then studied in detail. Characterization on the initial growth shows that the CuPc molecules assemble in a "rod-like" nano crystal with interconnected network on ATO, which probably promotes the charge carrier transport, whereas, they form isolated small islands with amorphous structure on SiO2. In addition, a better metal/organic contact is observed on ATO, which benefits the charge carrier injection. Our studies suggest that the low-temperature, solution-processed high-k ATO is a promising candidate for fabrication of high-performance, low-voltage OTFTs. Furthermore, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. Hence, investigation the effects of interfaces

  14. Parallelizable adiabatic gate teleportation

    NASA Astrophysics Data System (ADS)

    Nakago, Kosuke; Hajdušek, Michal; Nakayama, Shojun; Murao, Mio

    2015-12-01

    To investigate how a temporally ordered gate sequence can be parallelized in adiabatic implementations of quantum computation, we modify adiabatic gate teleportation, a model of quantum computation proposed by Bacon and Flammia [Phys. Rev. Lett. 103, 120504 (2009), 10.1103/PhysRevLett.103.120504], to a form deterministically simulating parallelized gate teleportation, which is achievable only by postselection. We introduce a twisted Heisenberg-type interaction Hamiltonian, a Heisenberg-type spin interaction where the coordinates of the second qubit are twisted according to a unitary gate. We develop parallelizable adiabatic gate teleportation (PAGT) where a sequence of unitary gates is performed in a single step of the adiabatic process. In PAGT, numeric calculations suggest the necessary time for the adiabatic evolution implementing a sequence of L unitary gates increases at most as O (L5) . However, we show that it has the interesting property that it can map the temporal order of gates to the spatial order of interactions specified by the final Hamiltonian. Using this property, we present a controlled-PAGT scheme to manipulate the order of gates by a control qubit. In the controlled-PAGT scheme, two differently ordered sequential unitary gates F G and G F are coherently performed depending on the state of a control qubit by simultaneously applying the twisted Heisenberg-type interaction Hamiltonians implementing unitary gates F and G . We investigate why the twisted Heisenberg-type interaction Hamiltonian allows PAGT. We show that the twisted Heisenberg-type interaction Hamiltonian has an ability to perform a transposed unitary gate by just modifying the space ordering of the final Hamiltonian implementing a unitary gate in adiabatic gate teleportation. The dynamics generated by the time-reversed Hamiltonian represented by the transposed unitary gate enables deterministic simulation of a postselected event of parallelized gate teleportation in adiabatic

  15. Digital Microfluidic Logic Gates

    NASA Astrophysics Data System (ADS)

    Zhao, Yang; Xu, Tao; Chakrabarty, Krishnendu

    Microfluidic computing is an emerging application for microfluidics technology. We propose microfluidic logic gates based on digital microfluidics. Using the principle of electrowetting-on-dielectric, AND, OR, NOT and XOR gates are implemented through basic droplet-handling operations such as transporting, merging and splitting. The same input-output interpretation enables the cascading of gates to create nontrivial computing systems. We present a potential application for microfluidic logic gates by implementing microfluidic logic operations for on-chip HIV test.

  16. Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor.

    PubMed

    Cho, Jun Hee; Lee, Sang-Ick; Kim, Jong Hyun; Yim, Sang Jun; Shin, Hyung Soo; Han, Mi Jeong; Chae, Won Mook; Lee, Sung Duck; Ahn, Chi Young; Kim, Myong-Woon

    2015-01-01

    Zirconium based thin film have been deposited by atomic layer deposition (ALD) process using Zr and Si containing Zr precursor with ozone as oxidant. We have pursued a means to control composition by varying Zr and Si containing precursor by cycle frequency. The molar ratio of Si to Zr in the Zr based films was 0.2, 0.25, 0.33, and 0.5. Addition of Si containing Zr precursor on Zirconium based thin films was effective for the decrease of the roughness, while an increase of density. XPS analysis indicated that the addition of Si containing Zr precursors in the Zr based film formed the silicate structure. The XRD analysis of the all ZrO2-SiO2 mixed films annealed at 600 degrees C for 5 min indicated the presence of amorphous. However, the ZrO2 film showed diffraction peaks at 2θ = 30.6 degrees due to the presence of the Tetragonal ZrO2. The incorporation of Si into ZrO2 films helps stabilize an amorphous structure during deposition and annealing. The Zr based thin film (Si/Zr = 0.25) exhibited that the leakage current density was 6.2 x 10(-7) A/cm2 at a bias of - 1.5 V. PMID:26328365

  17. Gated strip proportional detector

    DOEpatents

    Morris, Christopher L.; Idzorek, George C.; Atencio, Leroy G.

    1987-01-01

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10.sup.6. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  18. Gated strip proportional detector

    DOEpatents

    Morris, C.L.; Idzorek, G.C.; Atencio, L.G.

    1985-02-19

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10/sup 6/. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  19. Range gated imaging experiments using gated intensifiers

    SciTech Connect

    McDonald, T.E. Jr.; Yates, G.J.; Cverna, F.H.; Gallegos, R.A.; Jaramillo, S.A.; Numkena, D.M.; Payton, J.; Pena-Abeyta, C.R.

    1999-03-01

    A variety of range gated imaging experiments using high-speed gated/shuttered proximity focused microchannel plate image intensifiers (MCPII) are reported. Range gated imaging experiments were conducted in water for detection of submerged mines in controlled turbidity tank test and in sea water for the Naval Coastal Sea Command/US Marine Corps. Field experiments have been conducted consisting of kilometer range imaging of resolution targets and military vehicles in atmosphere at Eglin Air Force Base for the US Air Force, and similar imaging experiments, but in smoke environment, at Redstone Arsenal for the US Army Aviation and Missile Command (AMCOM). Wavelength of the illuminating laser was 532 nm with pulse width ranging from 6 to 12 ns and comparable gate widths. These tests have shown depth resolution in the tens of centimeters range from time phasing reflected LADAR images with MCPII shutter opening.

  20. Four-Quasiparticle High-K States in Neutron-Deficient Lead and Polonium Nuclei

    NASA Astrophysics Data System (ADS)

    Shi, Yue; Xu, Furong

    2012-06-01

    Configuration-constrained potential energy surface calculations have been performed to investigate four-quasiparticle high-K configurations in neutron-deficient lead and polonium isotopes. A good agreement between the calculations and the experimental data has been found for the excitation energy of the observed Kπ = 19- state in 188Pb. Several lowly excited high-K states are predicted, and the large oblate deformation and low energy indicate high-K isomerism in these nuclei.

  1. 6. DETAIL VIEW OF DAM, SHOWING TAINTER GATES, GATE PIERS ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    6. DETAIL VIEW OF DAM, SHOWING TAINTER GATES, GATE PIERS AND DAM BRIDGE, WITH ROLLER GATE HEADHOUSE IN BACKGROUND, LOOKING EAST, UPSTREAM - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 10, Guttenberg, Clayton County, IA

  2. 5. DETAIL VIEW OF DAM, SHOWING TAINTER GATES, GATE PIERS ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. DETAIL VIEW OF DAM, SHOWING TAINTER GATES, GATE PIERS AND DAM BRIDGE, WITH ROLLER GATE HEADHOUSES IN BACKGROUND, LOOKING NORTHWEST, UPSTREAM - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 10, Guttenberg, Clayton County, IA

  3. 8. VIEW OF ROLLER GATE PIER AND ROLLER GATE OPERATING ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    8. VIEW OF ROLLER GATE PIER AND ROLLER GATE OPERATING MACHINERY HOUSE, SHOWING SERVICE BRIDGE AND ROLLER GATE, LOOKING EAST - Upper Mississippi River Nine-Foot Channel Project, Lock & Dam No. 25, Cap au Gris, Lincoln County, MO

  4. 28. VIEW OF MITER GATE OPERATING MACHINERY, SHOWING MITER GATE, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    28. VIEW OF MITER GATE OPERATING MACHINERY, SHOWING MITER GATE, GATE STRUT, AND SECTOR ARM, LOOKING EAST - Upper Mississippi River Nine-Foot Channel Project, Lock & Dam No. 25, Cap au Gris, Lincoln County, MO

  5. 19. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE ARM, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    19. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE ARM, PIER, TRUNNION PIN AND GATE GAUGE, LOOKING NORTH - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  6. 15. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATES AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    15. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATES AND GATE ARMS, PIERS AND DAM BRIDGE, LOOKING NORTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  7. 4. DETAIL VIEW OF TAINTER GATE PIER AND TAINTER GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. DETAIL VIEW OF TAINTER GATE PIER AND TAINTER GATE NO. 7 AND NON-SUBMERSIBLE TAINTER GATES, LOOKING WEST (UPSTREAM) - Upper Mississippi River 9-Foot Channel Project, Lock & Dam 26R, Alton, Madison County, IL

  8. Sliding-gate valve

    DOEpatents

    Usnick, George B.; Ward, Gene T.; Blair, Henry O.; Roberts, James W.; Warner, Terry N.

    1979-01-01

    This invention is a novel valve of the slidable-gate type. The valve is designed especially for long-term use with highly abrasive slurries. The sealing surfaces of the gate are shielded by the valve seats when the valve is fully open or closed, and the gate-to-seat clearance is swept with an inflowing purge gas while the gate is in transit. A preferred form of the valve includes an annular valve body containing an annular seat assembly defining a flow channel. The seat assembly comprises a first seat ring which is slidably and sealably mounted in the body, and a second seat ring which is tightly fitted in the body. These rings cooperatively define an annular gap which, together with passages in the valve body, forms a guideway extending normal to the channel. A plate-type gate is mounted for reciprocation in the guideway between positions where a portion of the plate closes the channel and where a circular aperture in the gate is in register with the channel. The valve casing includes opposed chambers which extend outwardly from the body along the axis of the guideway to accommodate the end portions of the gate. The chambers are sealed from atmosphere; when the gate is in transit, purge gas is admitted to the chambers and flows inwardly through the gate-to-seat-ring, clearance, minimizing buildup of process solids therein. A shaft reciprocated by an external actuator extends into one of the sealed chambers through a shaft seal and is coupled to an end of the gate. Means are provided for adjusting the clearance between the first seat ring and the gate while the valve is in service.

  9. Adiabatically implementing quantum gates

    SciTech Connect

    Sun, Jie; Lu, Songfeng Liu, Fang

    2014-06-14

    We show that, through the approach of quantum adiabatic evolution, all of the usual quantum gates can be implemented efficiently, yielding running time of order O(1). This may be considered as a useful alternative to the standard quantum computing approach, which involves quantum gates transforming quantum states during the computing process.

  10. Gates Speaks to Librarians.

    ERIC Educational Resources Information Center

    St. Lifer, Evan

    1997-01-01

    In an interview, Microsoft CEO Bill Gates answers questions about the Gates Library Foundation; Libraries Online; tax-support for libraries; comparisons to Andrew Carnegie; charges of "buying" the library market; Internet filters, policies, and government censorship; the future of the World Wide Web and the role of librarians in its future.(PEN)

  11. Optical NAND gate

    DOEpatents

    Skogen, Erik J.; Raring, James; Tauke-Pedretti, Anna

    2011-08-09

    An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  12. 18. DETAIL VIEW OF NONSUBMERSIBLE TAINTER GATE, SHOWING GATE AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    18. DETAIL VIEW OF NON-SUBMERSIBLE TAINTER GATE, SHOWING GATE AND GATE ARMS, GATE PIER AND DAM BRIDGE, LOOKING NORTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  13. 17. DETAIL VIEW OF NONSUBMERSIBLE TAINTER GATE, SHOWING GATE AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    17. DETAIL VIEW OF NON-SUBMERSIBLE TAINTER GATE, SHOWING GATE AND GATE ARM, GATE PIER AND DAM BRIDGE, LOOKING SOUTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  14. Optical NOR gate

    DOEpatents

    Skogen, Erik J.; Tauke-Pedretti, Anna

    2011-09-06

    An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  15. Optical XOR gate

    SciTech Connect

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  16. Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

    NASA Astrophysics Data System (ADS)

    Liu, Ao; Liu, Guoxia; Zhu, Huihui; Shin, Byoungchul; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

    2016-06-01

    Solution-processed p-type oxide semiconductors have recently attracted increasing interests for the applications in low-cost optoelectronic devices and low-power consumption complementary metal-oxide-semiconductor circuits. In this work, p-type nickel oxide (NiOx) thin films were prepared using low-temperature solution process and integrated as the channel layer in thin-film transistors (TFTs). The electrical properties of NiOx TFTs, together with the characteristics of NiOx thin films, were systematically investigated as a function of annealing temperature. By introducing aqueous high-k aluminum oxide (Al2O3) gate dielectric, the electrical performance of NiOx TFT was improved significantly compared with those based on SiO2 dielectric. Particularly, the hole mobility was found to be 60 times enhancement, quantitatively from 0.07 to 4.4 cm2/V s, which is mainly beneficial from the high areal capacitance of the Al2O3 dielectric and high-quality NiOx/Al2O3 interface. This simple solution-based method for producing p-type oxide TFTs is promising for next-generation oxide-based electronic applications.

  17. Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

    SciTech Connect

    Lu, Cimang Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira

    2015-08-17

    We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

  18. Detection of high k turbulence using two dimensional phase contrast imaging on LHD

    SciTech Connect

    Michael, C. A.; Tanaka, K.; Akiyama, T.; Kawahata, K.; Vyacheslavov, L. N.; Sanin, A.; Kharchev, N. K.; Okajima, S.

    2008-10-15

    High k turbulence, up to 30 cm{sup -1}, can be measured using the two dimensional CO2 laser phase contrast imaging system on LHD. Recent hardware improvements and experimental results are presented. Precise control over the lens positions in the detection system is necessary because of the short depth of focus for high k modes. Remote controllable motors to move optical elements were installed, which, combined with measurements of the response to ultrasound injection, allowed experimental verification and shot-to-shot adjustment of the object plane. Strong high k signals are observed within the first 100-200 ms after the initial electron cyclotron heating (ECH) breakdown, in agreement with gyrotron scattering. During later times in the discharge, the entire k spectrum shifts to lower values (although the total amplitude does not change significantly), and the weaker high k signals are obscured by leakage of low k components at low frequency, and detector noise, at high frequency.

  19. Detection of high k turbulence using two dimensional phase contrast imaging on LHD.

    PubMed

    Michael, C A; Tanaka, K; Vyacheslavov, L N; Sanin, A; Kharchev, N K; Akiyama, T; Kawahata, K; Okajima, S

    2008-10-01

    High k turbulence, up to 30 cm(-1), can be measured using the two dimensional CO2 laser phase contrast imaging system on LHD. Recent hardware improvements and experimental results are presented. Precise control over the lens positions in the detection system is necessary because of the short depth of focus for high k modes. Remote controllable motors to move optical elements were installed, which, combined with measurements of the response to ultrasound injection, allowed experimental verification and shot-to-shot adjustment of the object plane. Strong high k signals are observed within the first 100-200 ms after the initial electron cyclotron heating (ECH) breakdown, in agreement with gyrotron scattering. During later times in the discharge, the entire k spectrum shifts to lower values (although the total amplitude does not change significantly), and the weaker high k signals are obscured by leakage of low k components at low frequency, and detector noise, at high frequency. PMID:19044541

  20. Optimal simulation of Deutsch gates and the Fredkin gate

    NASA Astrophysics Data System (ADS)

    Yu, Nengkun; Ying, Mingsheng

    2015-03-01

    In this paper, we study the optimal simulation of the three-qubit unitary using two-qubit gates. First, we completely characterize the two-qubit gate cost of simulating the Deutsch gate (controlled-controlled gate) by generalizing our result on the two-qubit cost of the Toffoli gate. The function of any Deutsch gate is simply a three-qubit controlled-unitary gate and can be intuitively explained as follows: The gate outputs the states of the two control qubits directly, and applies the given one-qubit unitary u on the target qubit only if both the states of the control qubits are |1 > . Previously, it was only known that five two-qubit gates are sufficient for implementing such a gate [Sleator and Weinfurter, Phys. Rev. Lett. 74, 4087 (1995), 10.1103/PhysRevLett.74.4087]. We show that if the determinant of u is 1, four two-qubit gates are optimal. Otherwise, five two-qubit gates are required. For the Fredkin gate (the controlled-swap gate), we prove that five two-qubit gates are necessary and sufficient, which settles the open problem introduced in Smolin and DiVincenzo [Phys. Rev. A 53, 2855 (1996), 10.1103/PhysRevA.53.2855].

  1. Nitric Oxide-mediated Relaxation by High K in Human Gastric Longitudinal Smooth Muscle.

    PubMed

    Kim, Young Chul; Choi, Woong; Yun, Hyo-Young; Sung, Rohyun; Yoo, Ra Young; Park, Seon-Mee; Yun, Sei Jin; Kim, Mi-Jung; Song, Young-Jin; Xu, Wen-Xie; Lee, Sang Jin

    2011-12-01

    This study was designed to elucidate high-K(+)induced response of circular and longitudinal smooth muscle from human gastric corpus using isometric contraction. Contraction from circular and longitudinal muscle stripes of gastric corpus greater curvature and lesser curvature were compared. Circular smooth muscle from corpus greater curvature showed high K(+) (50 mM)-induced tonic contraction. On the contrary, however, longitudinal smooth muscle strips showed high K(+) (50 mM)-induced sustained relaxation. To find out the reason for the discrepancy we tested several relaxation mechanisms. Protein kinase blockers like KT5720, PKA inhibitor, and KT5823, PKG inhibitor, did not affect high K(+)-induced relaxation. K(+) channel blockers like tetraethylammonium (TEA), apamin (APA), glibenclamide (Glib) and barium (Ba(2+)) also had no effect. However, N(G)-nitro-L-arginine (L-NNA) and 1H-(1,2,4) oxadiazolo (4,3-A) quinoxalin-1-one (ODQ), an inhibitor of soluble guanylate cyclase (sGC) and 4-AP (4-aminopyridine), voltage-dependent K(+) channel (K(V)) blocker, inhibited high K(+)-induced relaxation, hence reversing to tonic contraction. High K(+)-induced relaxation was observed in gastric corpus of human stomach, but only in the longitudinal muscles from greater curvature not lesser curvature. L-NNA, ODQ and K(V) channel blocker sensitive high K(+)-induced relaxation in longitudinal muscle of higher portion of corpus was also observed. These results suggest that longitudinal smooth muscle from greater curvature of gastric corpus produced high K(+)-induced relaxation which was activated by NO/sGC pathway and by K(V) channel dependent mechanism. PMID:22359479

  2. Explicit model for direct tunneling current in double-gate MOSFETs through a dielectric stack

    NASA Astrophysics Data System (ADS)

    Chaves, Ferney; Jiménez, David; Suñé, Jordi

    2012-10-01

    In this paper, we present an explicit compact quantum model for the direct tunneling current through dual layer SiO2/high-K dielectrics in Double Gate (DG) structures. Specifically, an explicit closed-form expression is proposed, useful to study the impact of dielectric constants and band offsets in determining the gate leakage, allowing to identify materials to construct these devices, and useful for the fast evaluation of the gate leakage in the context of electrical circuit simulators. A comparison with self-consistent numerical solution of Schrödinger-Poisson (SP) equations has been performed to demonstrate the accuracy of the model. Finally, a benchmarking test of different gate stacks have been proposed searching to fulfill the gate tunneling limits as projected by the International Technology Roadmap for Semiconductors.

  3. The human respiratory gate

    NASA Technical Reports Server (NTRS)

    Eckberg, Dwain L.

    2003-01-01

    Respiratory activity phasically alters membrane potentials of preganglionic vagal and sympathetic motoneurones and continuously modulates their responsiveness to stimulatory inputs. The most obvious manifestation of this 'respiratory gating' is respiratory sinus arrhythmia, the rhythmic fluctuations of electrocardiographic R-R intervals observed in healthy resting humans. Phasic autonomic motoneurone firing, reflecting the throughput of the system, depends importantly on the intensity of stimulatory inputs, such that when levels of stimulation are low (as with high arterial pressure and sympathetic activity, or low arterial pressure and vagal activity), respiratory fluctuations of sympathetic or vagal firing are also low. The respiratory gate has a finite capacity, and high levels of stimulation override the ability of respiration to gate autonomic responsiveness. Autonomic throughput also depends importantly on other factors, including especially, the frequency of breathing, the rate at which the gate opens and closes. Respiratory sinus arrhythmia is small at rapid, and large at slow breathing rates. The strong correlation between systolic pressure and R-R intervals at respiratory frequencies reflects the influence of respiration on these two measures, rather than arterial baroreflex physiology. A wide range of evidence suggests that respiratory activity gates the timing of autonomic motoneurone firing, but does not influence its tonic level. I propose that the most enduring significance of respiratory gating is its use as a precisely controlled experimental tool to tease out and better understand otherwise inaccessible human autonomic neurophysiological mechanisms.

  4. Advanced insulated gate bipolar transistor gate drive

    DOEpatents

    Short, James Evans; West, Shawn Michael; Fabean, Robert J.

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  5. CFTR Gating I

    PubMed Central

    Bompadre, Silvia G.; Ai, Tomohiko; Cho, Jeong Han; Wang, Xiaohui; Sohma, Yoshiro; Li, Min; Hwang, Tzyh-Chang

    2005-01-01

    The CFTR chloride channel is activated by phosphorylation of serine residues in the regulatory (R) domain and then gated by ATP binding and hydrolysis at the nucleotide binding domains (NBDs). Studies of the ATP-dependent gating process in excised inside-out patches are very often hampered by channel rundown partly caused by membrane-associated phosphatases. Since the severed ΔR-CFTR, whose R domain is completely removed, can bypass the phosphorylation-dependent regulation, this mutant channel might be a useful tool to explore the gating mechanisms of CFTR. To this end, we investigated the regulation and gating of the ΔR-CFTR expressed in Chinese hamster ovary cells. In the cell-attached mode, basal ΔR-CFTR currents were always obtained in the absence of cAMP agonists. Application of cAMP agonists or PMA, a PKC activator, failed to affect the activity, indicating that the activity of ΔR-CFTR channels is indeed phosphorylation independent. Consistent with this conclusion, in excised inside-out patches, application of the catalytic subunit of PKA did not affect ATP-induced currents. Similarities of ATP-dependent gating between wild type and ΔR-CFTR make this phosphorylation-independent mutant a useful system to explore more extensively the gating mechanisms of CFTR. Using the ΔR-CFTR construct, we studied the inhibitory effect of ADP on CFTR gating. The Ki for ADP increases as the [ATP] is increased, suggesting a competitive mechanism of inhibition. Single channel kinetic analysis reveals a new closed state in the presence of ADP, consistent with a kinetic mechanism by which ADP binds at the same site as ATP for channel opening. Moreover, we found that the open time of the channel is shortened by as much as 54% in the presence of ADP. This unexpected result suggests another ADP binding site that modulates channel closing. PMID:15767295

  6. Constant voltage stress induced current in Ta2O5 stacks and its dependence on a gate electrode

    NASA Astrophysics Data System (ADS)

    Atanassova, E.; Stojadinovic, N.; Paskaleva, A.; Spassov, D.; Vracar, L.; Georgieva, M.

    2008-07-01

    Response of 8 nm Ta2O5 stacks with different gates (Al, W and Au) to voltage stress at gate injection is studied by probing under various voltage/time conditions at room temperature and at 100 °C. A stress-induced leakage current (SILC) is detected in all samples and reveals gate dependence. It is established that the pre-existing traps actually govern this response, and the impact of gate-induced defects is stronger. The Au-gated devices are the most susceptible to the stress degradation. Two processes—electron trapping at pre-existing traps and positive charge build-up—are suggested to be responsible for generation of SILC. It is concluded that despite some gate effects, the origin of CVS degradation in this particular high-k dielectric is different from that in SiO2.

  7. The human respiratory gate

    PubMed Central

    Eckberg, Dwain L

    2003-01-01

    Respiratory activity phasically alters membrane potentials of preganglionic vagal and sympathetic motoneurones and continuously modulates their responsiveness to stimulatory inputs. The most obvious manifestation of this ‘respiratory gating’ is respiratory sinus arrhythmia, the rhythmic fluctuations of electrocardiographic R–R intervals observed in healthy resting humans. Phasic autonomic motoneurone firing, reflecting the throughput of the system, depends importantly on the intensity of stimulatory inputs, such that when levels of stimulation are low (as with high arterial pressure and sympathetic activity, or low arterial pressure and vagal activity), respiratory fluctuations of sympathetic or vagal firing are also low. The respiratory gate has a finite capacity, and high levels of stimulation override the ability of respiration to gate autonomic responsiveness. Autonomic throughput also depends importantly on other factors, including especially, the frequency of breathing, the rate at which the gate opens and closes. Respiratory sinus arrhythmia is small at rapid, and large at slow breathing rates. The strong correlation between systolic pressure and R–R intervals at respiratory frequencies reflects the influence of respiration on these two measures, rather than arterial baroreflex physiology. A wide range of evidence suggests that respiratory activity gates the timing of autonomic motoneurone firing, but does not influence its tonic level. I propose that the most enduring significance of respiratory gating is its use as a precisely controlled experimental tool to tease out and better understand otherwise inaccessible human autonomic neurophysiological mechanisms. PMID:12626671

  8. Gate dielectric degradation: Pre-existing vs. generated defects

    SciTech Connect

    Veksler, Dmitry E-mail: gennadi.bersuker@sematech.org; Bersuker, Gennadi E-mail: gennadi.bersuker@sematech.org

    2014-01-21

    We consider the possibility that degradation of the electrical characteristics of high-k gate stacks under low voltage stresses of practical interest is caused primarily by activation of pre-existing defects rather than generation of new ones. In nFETs in inversion, in particular, defect activation is suggested to be associated with the capture of an injected electron: in this charged state, defects can participate in a fast exchange of charge carriers with the carrier reservoir (substrate or gate electrode) that constitutes the physical process underlying a variety of electrical measurements. The degradation caused by the activation of pre-existing defects, as opposed to that of new defect generation, is both reversible and exhibits a tendency to saturate through the duration of stress. By using the multi-phonon assisted charge transport description, it is demonstrated that the trap activation concept allows reproducing a variety of experimental results including stress time dependency of the threshold voltage, leakage current, charge pumping current, and low frequency noise. Continuous, long-term degradation described by the power law time dependency is shown to be determined by the activation of defects located in the interfacial SiO{sub 2} layer of the high-k gate stacks. The findings of this study can direct process optimization efforts towards reduction of as-grown precursors of the charge trapping defects as the major factor affecting reliability.

  9. 25. DETAIL VIEW OF TAINTER GATE, SHOWING GATE PIER, SWITCH ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    25. DETAIL VIEW OF TAINTER GATE, SHOWING GATE PIER, SWITCH AND CHAIN MOUNTED ON UNDERSIDE OF DAM BRIDGE, LOOKING SOUTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 10, Guttenberg, Clayton County, IA

  10. 24. DETAIL VIEW OF TAINTER GATE, SHOWING GATE PIER, SWITCH ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    24. DETAIL VIEW OF TAINTER GATE, SHOWING GATE PIER, SWITCH AND CHAIN MOUNTED ON UNDERSIDE OF DAM BRIDGE, LOOKING SOUTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 10, Guttenberg, Clayton County, IA

  11. 7. DETAIL VIEW OF DAM, SHOWING ROLLER GATES, GATE PIERS, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. DETAIL VIEW OF DAM, SHOWING ROLLER GATES, GATE PIERS, HEADHOUSES AND DAM BRIDGE, LOOKING NORTHWEST, UPSTREAM - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 9, Lynxville, Crawford County, WI

  12. 5. VIEW OF DAM, SHOWING TAINTER GATE PIERS, TAINTER GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. VIEW OF DAM, SHOWING TAINTER GATE PIERS, TAINTER GATE NO. 1, AND SERVICE BRIDGE, LOOKING SOUTHEAST (DOWNSTREAM) - Upper Mississippi River Nine-Foot Channel Project, Lock & Dam No. 25, Cap au Gris, Lincoln County, MO

  13. 4. VIEW OF DAM, SHOWING TAINTER GATE PIERS, TAINTER GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. VIEW OF DAM, SHOWING TAINTER GATE PIERS, TAINTER GATE NO. 1 SERVICE BRIDGE, AND LOCOMOTIVE CRANE, LOOKING NORTHEAST (UPSTREAM) - Upper Mississippi River Nine-Foot Channel Project, Lock & Dam No. 25, Cap au Gris, Lincoln County, MO

  14. Detail of gate, gate slots, and connection between the two ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Detail of gate, gate slots, and connection between the two segments of the rectangular rearing tank. Pump house (1962) at entrance is in the background. View to the southwest. - Prairie Creek Fish Hatchery, Hwy. 101, Orick, Humboldt County, CA

  15. High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition

    SciTech Connect

    Li, Flora M.; Bayer, Bernhard C.; Hofmann, Stephan; Milne, William I.; Flewitt, Andrew J.; Dutson, James D.; Wakeham, Steve J.; Thwaites, Mike J.

    2011-06-20

    Amorphous hafnium oxide (HfO{sub x}) is deposited by sputtering while achieving a very high k{approx}30. Structural characterization suggests that the high k is a consequence of a previously unreported cubiclike short range order in the amorphous HfO{sub x} (cubic k{approx}30). The films also possess a high electrical resistivity of 10{sup 14} {Omega} cm, a breakdown strength of 3 MV cm{sup -1}, and an optical gap of 6.0 eV. Deposition at room temperature and a high deposition rate ({approx}25 nm min{sup -1}) makes these high-k amorphous HfO{sub x} films highly advantageous for plastic electronics and high throughput manufacturing.

  16. Cardiac gated ventilation

    SciTech Connect

    Hanson, C.W. III; Hoffman, E.A.

    1995-12-31

    There are several theoretic advantages to synchronizing positive pressure breaths with the cardiac cycle, including the potential for improving distribution of pulmonary and myocardial blood flow and enhancing cardiac output. The authors evaluated the effects of synchronizing respiration to the cardiac cycle using a programmable ventilator and electron beam CT (EBCT) scanning. The hearts of anesthetized dogs were imaged during cardiac gated respiration with a 50 msec scan aperture. Multi slice, short axis, dynamic image data sets spanning the apex to base of the left ventricle were evaluated to determine the volume of the left ventricular chamber at end-diastole and end-systole during apnea, systolic and diastolic cardiac gating. The authors observed an increase in cardiac output of up to 30% with inspiration gated to the systolic phase of the cardiac cycle in a non-failing model of the heart.

  17. Cardiac gated ventilation

    NASA Astrophysics Data System (ADS)

    Hanson, C. William, III; Hoffman, Eric A.

    1995-05-01

    There are several theoretic advantages to synchronizing positive pressure breaths with the cardiac cycle, including the potential for improving distribution of pulmonary and myocardial blood flow and enhancing cardiac output. We evaluated the effects of synchronizing respiration to the cardiac cycle using a programmable ventilator and electron beam CT (EBCT) scanning. The hearts of anesthetized dogs were imaged during cardiac gated respiration with a 50msec scan aperture. Multislice, short axis, dynamic image data sets spanning the apex to base of the left ventricle were evaluated to determine the volume of the left ventricular chamber at end-diastole and end-systole during apnea, systolic and diastolic cardiac gating. We observed an increase in cardiac output of up to 30% with inspiration gated to the systolic phase of the cardiac cycle in a nonfailing model of the heart.

  18. Charge trapping characterization methodology for the evaluation of hafnium-based gate dielectric film systems

    NASA Astrophysics Data System (ADS)

    Young, Chadwin Delin

    Scaling of advanced CMOS device dimensions, as set forth for future technology nodes by the International Technology Roadmap for Semiconductors (ITRS), will require reduction of the equivalent oxide thickness (EOT) of gate dielectrics below a point that can be physically realized using silicon dioxide. In order to continue EOT scaling below ˜1.5nm and reduce gate leakage current, higher dielectric constant materials will be needed to replace SiO2. Hafnium-based dielectrics are being widely investigated as potential candidates for the gate dielectric application. Their charge trapping characteristics were identified as a primary issue preventing the introduction of Hf-based materials into CMOS technology, potentially causing threshold voltage instability and mobility degradation. Several measurement techniques can be used to study and quantify charge trapping: Capacitance-Voltage (C-V) hysteresis, alternating stress and sense Vfb/Vt instability, charge pumping (CP), and fast transient Id-Vg (FT) measurement. The two most promising techniques are CP and FT measurements. Fixed-amplitude (FA) CP can measure interface state densities, while variable-amplitude (VA) CP can measure trap densities in the high-kappa bulk. In the FT measurement, the shift of the Id -Vg curves generated by the up and down swing of a trapezoidal pulse (i.e., DeltaVt) corresponds to the amount of the trapped charge. By using these two measurement approaches on varying physical thicknesses of Hf-based gate dielectric stacks, the impact of interfacial and bulk high-kappa charge-trapping properties on device performance (i.e., mobility) was investigated. Fixed-amplitude CP gives low interface state densities for all depositions indicating good interface passivation, whereas VA CP and FT shows large trap densities in the bulk of the high-kappa layer. Results demonstrate that the bulk trapping in the high-kappa film contributes to the degradation of device performance. Using fast transient

  19. Geochronology of high-K aluminous mare basalt clasts from Apollo 14 breccia 14304

    NASA Technical Reports Server (NTRS)

    Shih, C.-Y.; Bansal, B. M.; Nyquist, L. E.; Bogard, D. D.; Dasch, E. J.

    1987-01-01

    Two aluminous mare basalt clasts of high K abundances from Apollo 14 breccia 14304 (the 14304,127 and 14304,128 samples) were characterized with respect to the Rb and Sr concentrations and isotopic compositions, and the Rb-Sr, K-Ar, and Sm-Nd isotopic age determinations were carried out. The results suggest that these high-K basalts were melts derived from mantle material and that they have experienced about ten-fold Rb/Sr and K/La enrichments at approximately the time of crystallization.

  20. Effects of high-order deformation on high-K isomers in superheavy nuclei

    SciTech Connect

    Liu, H. L.; Bertulani, C. A.; Xu, F. R.; Walker, P. M.

    2011-01-15

    Using, for the first time, configuration-constrained potential-energy-surface calculations with the inclusion of {beta}{sub 6} deformation, we find remarkable effects of the high-order deformation on the high-K isomers in {sup 254}No, the focus of recent spectroscopy experiments on superheavy nuclei. For shapes with multipolarity six, the isomers are more tightly bound and, microscopically, have enhanced deformed shell gaps at N=152 and Z=100. The inclusion of {beta}{sub 6} deformation significantly improves the description of the very heavy high-K isomers.

  1. Geochronology of high-K aluminous mare basalt clasts from Apollo 14 breccia 14304

    NASA Astrophysics Data System (ADS)

    Shih, C.-Y.; Nyquist, L. E.; Bogard, D. D.; Dasch, E. J.; Bansal, B. M.; Wiesmann, H.

    1987-12-01

    Two aluminous mare basalt clasts of high K abundances from Apollo 14 breccia 14304 (the 14304,127 and 14304,128 samples) were characterized with respect to the Rb and Sr concentrations and isotopic compositions, and the Rb-Sr, K-Ar, and Sm-Nd isotopic age determinations were carried out. The results suggest that these high-K basalts were melts derived from mantle material and that they have experienced about ten-fold Rb/Sr and K/La enrichments at approximately the time of crystallization.

  2. Atomic layer deposition of crystalline SrHfO{sub 3} directly on Ge (001) for high-k dielectric applications

    SciTech Connect

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Hu, Chengqing; Jiang, Aiting; Yu, Edward T.; Lu, Sirong; Smith, David J.; Posadas, Agham; Demkov, Alexander A.

    2015-02-07

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO{sub 3} (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10{sup −5} A/cm{sup 2} at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D{sub it}) is estimated to be as low as ∼2 × 10{sup 12 }cm{sup −2 }eV{sup −1} under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D{sub it} value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.

  3. Outlet side of gate, showing the Radial Gate, hoist mechanism ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Outlet side of gate, showing the Radial Gate, hoist mechanism and concrete walkway across the canal. The concrete baffle separating the afterbay and the cipoletti weir is in the foreground - Wellton-Mohawk Irrigation System, Radial Gate Check with Drop, Wellton Canal 9.9, West of Avenue 34 East & north of County Ninth Street, Wellton, Yuma County, AZ

  4. Silicon Nanowires with High-k Hafnium Oxide Dielectrics for Sensitive Detection of Small Nucleic Acid Oligomers

    PubMed Central

    Dorvel, Brian R.; Reddy, Bobby; Go, Jonghyun; Guevara, Carlos Duarte; Salm, Eric; Alam, Muhammad Ashraful; Bashir, Rashid

    2012-01-01

    Nanobiosensors based on silicon nanowire field effect transistors offer advantages of low cost, label-free detection, and potential for massive parallelization. As a result, these sensors have often been suggested as an attractive option for applications in Point-of-care (POC) medical diagnostics. Unfortunately, a number of performance issues such as gate leakage and current instability due to fluid contact, have prevented widespread adoption of the technology for routine use. High-k dielectrics, such as hafnium oxide (HfO2), have the known ability to address these challenges by passivating the exposed surfaces against destabilizing concerns of ion transport. With these fundamental stability issues addressed, a promising target for POC diagnostics and SiNWFET’s has been small oligonucleotides, more specifically microRNA (miRNA). MicroRNA’s are small RNA oligonucleotides which bind to messenger RNA’s, causing translational repression of proteins, gene silencing, and expressions are typically altered in several forms of cancer. In this paper, we describe a process for fabricating stable HfO2 dielectric based silicon nanowires for biosensing applications. Here we demonstrate sensing of single stranded DNA analogues to their microRNA cousins using miR-10b and miR-21 as templates, both known to be upregulated in breast cancer. We characterize the effect of surface functionalization on device performance using the miR-10b DNA analogue as the target sequence and different molecular weight poly-l-lysine as the functionalization layer. By optimizing the surface functionalization and fabrication protocol, we were able to achieve <100fM detection levels of miR-10b DNA analogue, with a theoretical limit of detection of 1fM. Moreover, the non-complementary DNA target strand, based on miR-21, showed very little response, indicating a highly sensitive and highly selective biosensing platform. PMID:22695179

  5. The four-gate transistor

    NASA Technical Reports Server (NTRS)

    Mojarradi, M. M.; Cristoveanu, S.; Allibert, F.; France, G.; Blalock, B.; Durfrene, B.

    2002-01-01

    The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

  6. Stanford, Duke, Rice,... and Gates?

    ERIC Educational Resources Information Center

    Carey, Kevin

    2009-01-01

    This article presents an open letter to Bill Gates. In his letter, the author suggests that Bill Gates should build a brand-new university, a great 21st-century institution of higher learning. This university will be unlike anything the world has ever seen. He asks Bill Gates not to stop helping existing colleges create the higher-education system…

  7. Strategy Retooled at Gates

    ERIC Educational Resources Information Center

    Robelen, Erik W.

    2008-01-01

    In rolling out plans last week to revamp its high school strategy and launch a major new effort on the postsecondary front, the Bill & Melinda Gates Foundation is undertaking a more sweeping approach to grantmaking that appears aimed at reshaping some core elements of the U.S. education system. The philanthropy's agenda on secondary schools…

  8. Toll Gate Metrication Project

    ERIC Educational Resources Information Center

    Izzi, John

    1974-01-01

    The project director of the Toll Gate Metrication Project describes the project as the first structured United States public school educational experiment in implementing change toward the adoption of the International System of Units. He believes the change will simplify, rather than complicate, the educational task. (AG)

  9. A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high-k dielectric

    NASA Astrophysics Data System (ADS)

    Gopi Krishna, Saramekala; Sarvesh, Dubey; Pramod, Kumar Tiwari

    2015-10-01

    In this paper, a surface potential based threshold voltage model of fully-depleted (FD) recessed-source/drain (Re-S/D) silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is presented while considering the effects of high-k gate-dielectric material induced fringing-field. The two-dimensional (2D) Poisson’s equation is solved in a channel region in order to obtain the surface potential under the assumption of the parabolic potential profile in the transverse direction of the channel with appropriate boundary conditions. The accuracy of the model is verified by comparing the model’s results with the 2D simulation results from ATLAS over a wide range of channel lengths and other parameters, including the dielectric constant of gate-dielectric material. The author, Pramod Kumar Tiwari, was supported by the Science and Engineering Research Board (SERB), Department of Science and Technology, Ministry of Human Resource and Development, Government of India under Young Scientist Research (Grant No. SB/FTP/ETA-415/2012).

  10. Hydraulic Tomography: Continuity and Discontinuity of High-K and Low-K Zones.

    PubMed

    Hochstetler, David L; Barrash, Warren; Leven, Carsten; Cardiff, Michael; Chidichimo, Francesco; Kitanidis, Peter K

    2016-03-01

    Hydraulic tomography is an emerging field and modeling method that provides a continuous hydraulic conductivity (K) distribution for an investigated region. Characterization approaches that rely on interpolation between one-dimensional (1D) profiles have limited ability to accurately identify high-K channels, juxtapositions of lenses with high K contrast, and breaches in layers or channels between such profiles. However, locating these features is especially important for groundwater flow and transport modeling, and for design and operation of in situ remediation in complex hydrogeologic environments. We use transient hydraulic tomography to estimate 3D K in a volume of 15-m diameter by 20-m saturated thickness in a highly heterogeneous unconfined alluvial (clay to sand-and-gravel) aquifer with a K range of approximately seven orders of magnitude at an active industrial site in Assemini, Sardinia, Italy. A modified Levenberg-Marquardt algorithm was used for geostatistical inversion to deal with the nonlinear nature of the highly heterogeneous system. The imaging results are validated with pumping tests not used in the tomographic inversion. These tests were conducted from three of five clusters of continuous multichannel tubing (CMTs) installed for observation in the tomographic testing. Locations of high-K continuity and discontinuity, juxtaposition of very high-K and very low-K lenses, and low-K "plugs" are evident in regions of the investigated volume where they likely would not have been identified with interpolation from 1D profiles at the positions of the pumping well and five CMT clusters. Quality assessment methods identified a suspect high-K feature between the tested volume and a lateral boundary of the model. PMID:26096272

  11. Universal Superreplication of Unitary Gates

    NASA Astrophysics Data System (ADS)

    Chiribella, G.; Yang, Y.; Huang, C.

    2015-03-01

    Quantum states obey an asymptotic no-cloning theorem, stating that no deterministic machine can reliably replicate generic sequences of identically prepared pure states. In stark contrast, we show that generic sequences of unitary gates can be replicated deterministically at nearly quadratic rates, with an error vanishing on most inputs except for an exponentially small fraction. The result is not in contradiction with the no-cloning theorem, since the impossibility of deterministically transforming pure states into unitary gates prevents the application of the gate replication protocol to states. In addition to gate replication, we show that N parallel uses of a completely unknown unitary gate can be compressed into a single gate acting on O (log2N ) qubits, leading to an exponential reduction of the amount of quantum communication needed to implement the gate remotely.

  12. Universal superreplication of unitary gates.

    PubMed

    Chiribella, G; Yang, Y; Huang, C

    2015-03-27

    Quantum states obey an asymptotic no-cloning theorem, stating that no deterministic machine can reliably replicate generic sequences of identically prepared pure states. In stark contrast, we show that generic sequences of unitary gates can be replicated deterministically at nearly quadratic rates, with an error vanishing on most inputs except for an exponentially small fraction. The result is not in contradiction with the no-cloning theorem, since the impossibility of deterministically transforming pure states into unitary gates prevents the application of the gate replication protocol to states. In addition to gate replication, we show that N parallel uses of a completely unknown unitary gate can be compressed into a single gate acting on O(log_{2}N) qubits, leading to an exponential reduction of the amount of quantum communication needed to implement the gate remotely. PMID:25860728

  13. Ion polarization behavior in alumina under pulsed gate bias stress

    SciTech Connect

    Liu, Yu; Diallo, Abdou Karim; Katz, Howard E.

    2015-03-16

    Alkali metal ion incorporation in alumina significantly increases alumina capacitance by ion polarization. With high capacitance, ion-incorporated aluminas become promising high dielectric constant (high-k) gate dielectric materials in field-effect transistors (FETs) to enable reduced operating voltage, using oxide or organic semiconductors. Alumina capacitance can be manipulated by incorporation of alkali metal ions, including potassium (K{sup +}), sodium (Na{sup +}), and lithium (Li{sup +}), having different bond strengths with oxygen. To investigate the electrical stability of zinc tin oxide-based transistors using ion incorporated alumina as gate dielectrics, pulsed biases at different duty cycles (20%, 10%, and 2% representing 5 ms, 10 ms, and 50 ms periods, respectively) were applied to the gate electrode, sweeping the gate voltage over series of these cycles. We observed a particular bias stress-induced decrease of saturation field-effect mobility accompanied by threshold voltage shifts (ΔV{sub th}) in potassium and sodium-incorporated alumina (abbreviated as PA and SA)-based FETs at high duty cycle that persisted over multiple gate voltage sweeps, suggesting a possible creation of new defects in the semiconductor. This conclusion is also supported by the greater change in the mobility-capacitance (μC) product than in capacitance itself. Moreover, a more pronounced ΔV{sub th} over shorter times was observed in lithium-incorporated alumina (abbreviated as LA)-based transistors, suggesting trapping of electrons in existing interfacial states. ΔV{sub th} from multiple gate voltage sweeps over time were fit to stretched exponential forms. All three dielectrics show good stability using 50-ms intervals (20-Hz frequencies), corresponding to 2% duty cycles.

  14. Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation

    SciTech Connect

    Yamashita, Y.; Yoshikawa, H.; Kobayashi, K.; Chikyo, T.

    2014-01-28

    Although gate stack structures with high-k materials have been extensively investigated, there are some issues to be solved for the formation of high quality gate stack structures. In the present study, we employed hard x-ray photoelectron spectroscopy in operating devices. This method allows us to investigate bias dependent electronic states, while keeping device structures intact. Using this method, we have investigated electronic states and potential distribution in gate metal/HfO{sub 2} gate stack structures under device operation. Analysis of the core levels shifts as a function of the bias voltage indicated that a potential drop occurred at the Pt/HfO{sub 2} interface for a Pt/HfO{sub 2} gate structure, while a potential gradient was not observed at the Ru/HfO{sub 2} interface for a Ru/HfO{sub 2} gate structure. Angle resolved photoelectron spectroscopy revealed that a thicker SiO{sub 2} layer was formed at the Pt/HfO{sub 2} interface, indicating that the origin of potential drop at Pt/HfO{sub 2} interface is formation of the thick SiO{sub 2} layer at the interface. The formation of the thick SiO{sub 2} layer at the metal/high-k interface might concern the Fermi level pinning, which is observed in metal/high-k gate stack structures.

  15. A quantum Fredkin gate

    PubMed Central

    Patel, Raj B.; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C.; Pryde, Geoff J.

    2016-01-01

    Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently. PMID:27051868

  16. A quantum Fredkin gate.

    PubMed

    Patel, Raj B; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C; Pryde, Geoff J

    2016-03-01

    Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently. PMID:27051868

  17. Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure

    SciTech Connect

    Coh, Sinisa; Heeg, Tassilo; Haeni, Jeffery; Biegalski, Michael D; Letteri, James; Bernhagen, M; Reiche, Paul; O'brien, Kevin; Uecker, Rinhold; Trolier-McKinstry, Susan; Schlom, Darrell; Vanderbilt, David

    2010-01-01

    We analyze both experimentally (where possible) and theoretically from first-principles the dielectric tensor components and crystal structure of five classes of Pbnm perovskites. All of these materials are believed to be stable on silicon and are therefore promising candidates for high-K dielectrics. We also analyze the structure of these materials with various simple models, decompose the lattice contribution to the dielectric tensor into force constant matrix eigenmode contributions, explore a peculiar correlation between structural and dielectric anisotropies in these compounds and give phonon frequencies and infrared activities of those modes that are infrared-active. We find that CaZrO3, SrZrO3, LaHoO3, and LaYO3 are among the most promising candidates for high-K dielectrics among the compounds we considered.

  18. High-K isomers in transactinide nuclei close to N = 162

    SciTech Connect

    Prassa, V. Nikšić, T.; Vretenar, D.; Lu, Bing-Nan; Ackermann, D.

    2015-10-15

    Transactinide nuclei around neutron number N = 162 display axially deformed equilibrium shapes, as shown in our previous analysis [1] of constrained mean-field energy surfaces and collective excitation spectra. In the present study we are particularly interested in the occurrence of high-K isomers in the axially deformed isotopes of Rf (Z = 104), Sg (Z = 106), Hs (Z = 108), and Ds (Z = 110), with neutron number N = 160 − 166 and the effect of the N=162 closure on the structure and distribution of two-quasiparticle (2qp) states. The evolution of high-K isomers is analysed in a self-consistent axially-symmetric relativistic Hartree-Bogoliubov calculation using the blocking approximation with time-reversal symmetry breaking.

  19. Spatial resolution study and power calibration of the high-k scattering system on NSTX

    SciTech Connect

    Lee, W.; Park, H. K.; Cho, M. H.; Namkung, W.; Smith, D. R.; Domier, C. W.; Luhmann, N. C. Jr

    2008-10-15

    NSTX high-k scattering system has been extensively utilized in studying the microturbulence and coherent waves. An absolute calibration of the scattering system was performed employing a new millimeter-wave source and calibrated attenuators. One of the key parameters essential for the calibration of the multichannel scattering system is the interaction length. This interaction length is significantly different from the conventional one due to the curvature and magnetic shear effect.

  20. Tailoring Dielectric Properties and Energy Density of Ferroelectric Polymer Nanocomposites by High-k Nanowires.

    PubMed

    Wang, Guanyao; Huang, Xingyi; Jiang, Pingkai

    2015-08-19

    High dielectric constant (k) polymer nanocomposites have shown great potential in dielectric and energy storage applications in the past few decades. The introduction of high-k nanomaterials into ferroelectric polymers has proven to be a promising strategy for the fabrication of high-k nanocomposites. One-dimensional large-aspect-ratio nanowires exhibit superiority in enhancing k values and energy density of polymer nanocomposites in comparison to their spherical counterparts. However, the impact of their intrinsic properties on the dielectric properties of polymer nanocomposites has been seldom investigated. Herein, four kinds of nanowires (Na2Ti3O7, TiO2, BaTiO3, and SrTiO3) with different inherent characteristics are elaborately selected to fabricate high-k ferroelectric polymer nanocomposites. Dopamine functionalization facilitates the excellent dispersion of these nanowires in the ferroelectric polymer matrix because of the strong polymer/nanowire interfacial adhesion. A thorough comparative study on the dielectric properties and energy storage capability of the nanowires-based nanocomposites has been presented. The results reveal that, among the four types of nanowires, BaTiO3 NWs show the best potential in improving the energy storage capability of the proposed nanocomposites, resulting from the most signficant increase of k while retaining the rather low dielectric loss and leakage current. PMID:26225887

  1. Candidates for long-lived high-K ground states in superheavy nuclei

    NASA Astrophysics Data System (ADS)

    Jachimowicz, P.; Kowal, M.; Skalski, J.

    2015-10-01

    On the basis of systematic calculations for 1364 heavy and superheavy (SH) nuclei, including odd systems, we have found a few candidates for high-K ground states in superheavy nuclei. The macroscopic-microscopic model based on the deformed Woods-Saxon single-particle potential that we use offers a reasonable description of SH systems, including known nuclear masses, Qα values, fission barriers, ground state (g.s.) deformations, and super- and hyperdeformed minima in the heaviest nuclei. Exceptionally untypical high-K intruder contents of the g.s. found for some nuclei, accompanied by a sizable excitation of the parent configuration in the daughter, suggest a dramatic hindrance of the α decay. Multidimensional hypercube configuration-constrained calculations of the potential energy surfaces (PESs) for one especially promising candidate, 272Mt, shows a ⋍ 6 MeV increase in the fission barrier above the configuration-unconstrained barrier. There is a possibility that one such high-K ground or low-lying state may be the longest-lived superheavy isotope.

  2. Origin of Indium Diffusion in High-k Oxide HfO2.

    PubMed

    Hu, Yaoqiao; Wang, Changhong; Dong, Hong; Wallace, Robert M; Cho, Kyeongjae; Wang, Wei-Hua; Wang, Weichao

    2016-03-23

    Indium (In) out-diffusion through high-k oxides severely undermines the thermal reliability of the next generation device of III-V/high-k based metal oxide semiconductor (MOS). To date, the microscopic mechanism of In diffusion is not yet fully understood. Here, we utilize angle resolved X-ray photoelectron spectroscopy (ARXPS) and density functional theory (DFT) to explore In diffusion in high-k oxide HfO2. Our ARXPS results confirm the In diffusion through as-prepared and annealed HfO2 grown on InP substrate. The theoretical results show that the In diffusion barrier is reduced to ∼0.88 eV in the presence of oxygen vacancies (VO), whereas this barrier is as high as ∼4.78 eV in pristine HfO2. Fundamentally, we found that the high feasibility of In diffusion is owing to In nonbonding with its neighboring atoms. These findings can be extended to understand the In diffusion in other materials in addition to HfO2. PMID:26939534

  3. Mechanisms of Ca uptake in high K/low Na solutions

    SciTech Connect

    Lodge, N.J.; Gelband, H.

    1986-03-05

    Ca uptake into neonatal rat atrium was measured with /sup 45/Ca. Extracellular /sup 45/Ca was displaced by washing tissues (45 min) in ice-cold Tyrode's containing 6.8 mM Ca/5 mM EGTA. Unless otherwise stated, solutions were pH balanced with HCO/sub 3//PO/sub 4//CO/sub 2/. Solutions in which 129 mM K or choline were substituted for 129 mM Na significantly stimulated Ca uptake (p < 0.001 for both). Inhibition of the Na/K pump (0 mM K solution), to increase intracellular Na, increased subsequent Ca uptakes measured in control, choline/low Na and high K/low Na solutions. The choline/low Na-stimulated uptake was increased by 104% while the high K/low Na stimulated uptake was increased only 11%. Cadmium (0.01-10 mM) blockade of the choline/low Na and high K/low Na uptakes was tested. Hepes buffered (HCO/sub 3//PO/sub 4//CO/sub 2/-free) solutions were used to avoid precipitation of Cd salts. The high K/low Na (Hepes) uptake was significantly (p < 0.001) greater than control and was 50% inhibited by 0.3 mM Cd. Choline/low Na in Hepes buffer increased Ca uptake only 5.1 +/- 4.3 ..mu..mol/kg (n=22) above control. In separate experiments, the choline/low Na (Hepes)-stimulated uptake (12.8 +/- 4.3 ..mu..mol/kg, n=8) was increased to 29.3 +/- 4.7 ..mu..mol/kg (n=8) by the addition of 1.8 mM PO/sub 4/. This intervention reduced the high K/low Na (Hepes)-stimulated uptake (47.1 +/- 6.4 ..mu..mol/kg, n=8) to 33.8 +/- 4.5 ..mu..mol/kg (n=8). They hypothesize that the uptake of Ca, induced by solutions of elevated K and lowered Na, is mediated by a minimum of two mechanisms; one stimulated by PO/sub 4/ and sensitive to transmembrane ion gradients, the other reduced by PO/sub 4/ and relatively insensitive to ion gradients.

  4. Low leakage current gate dielectrics prepared by ion beam assisted deposition for organic thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Chang Su; Jo, Sung Jin; Kim, Jong Bok; Ryu, Seung Yoon; Noh, Joo Hyon; Baik, Hong Koo; Lee, Se Jong; Kim, Youn Sang

    2007-12-01

    This communication reports on the fabrication of low operating voltage pentacene thin-film transistors with high-k gate dielectrics by ion beam assisted deposition (IBAD). These densely packed dielectric layers by IBAD show a much lower level of leakage current than those created by e-beam evaporation. These results, from the fact that those thin films deposited with low adatom mobility, have an open structure, consisting of spherical grains with pores in between, that acts as a significant path for leakage current. By contrast, our results demonstrate the potential to limit this leakage. The field effect mobility, on/off current ratio, and subthreshold slope obtained from pentacene thin-film transistors (TFTs) were 1.14 cm2/V s, 105, and 0.41 V/dec, respectively. Thus, the high-k gate dielectrics obtained by IBAD show promise in realizing low leakage current, low voltage, and high mobility pentacene TFTs.

  5. Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Anderson, Travis J.; Wheeler, Virginia D.; Shahin, David I.; Tadjer, Marko J.; Koehler, Andrew D.; Hobart, Karl D.; Christou, Aris; Kub, Francis J.; Eddy, Charles R., Jr.

    2016-07-01

    Advanced applications of AlGaN/GaN high-electron-mobility transistors (HEMTs) in high-power RF and power switching are driving the need for insulated gate technology. We present a metal–oxide–semiconductor (MOS) gate structure using atomic-layer-deposited ZrO2 as a high-k, high-breakdown gate dielectric for reduced gate leakage and a recessed barrier structure for enhancement mode operation. Compared to a Schottky metal-gate HEMT, the recessed MOS-HEMT structure demonstrated a reduction in the gate leakage current by 4 orders of magnitude and a threshold voltage shift of +6 V to a record +3.99 V, enabled by a combination of a recessed barrier structure and negative oxide charge.

  6. ONE SHAKE GATE FORMER

    DOEpatents

    Kalibjian, R.; Perez-Mendez, V.

    1957-08-20

    An improved circuit for forming square pulses having substantially short and precise durations is described. The gate forming circuit incorporates a secondary emission R. F. pentode adapted to receive input trigger pulses amd having a positive feedback loop comnected from the dynode to the control grid to maintain conduction in response to trigger pulses. A short circuited pulse delay line is employed to precisely control the conducting time of the tube and a circuit for squelching spurious oscillations is provided in the feedback loop.

  7. Tide gate valve

    SciTech Connect

    Raftis, S. G.

    1985-01-08

    A tide gate check valve in which at least three converging sides are provided at a tapered region of a flexible sleeve, so that on reverse back pressure build-up of fluid, reverse fluid flow is prevented, while the valve sleeve does not invert or collapse. The present configuration features embedded reinforcing elements for resisting inversion or collapsing when the back pressure builds up. This feature is especially important for large-sized conduits of 36'' or 72'' diameter, or even larger, such as are common in storm sewer applications.

  8. Compact gate valve

    DOEpatents

    Bobo, Gerald E.

    1977-01-01

    This invention relates to a double-disc gate valve which is compact, comparatively simple to construct, and capable of maintaining high closing pressures on the valve discs with low frictional forces. The valve casing includes axially aligned ports. Mounted in the casing is a sealed chamber which is pivotable transversely of the axis of the ports. The chamber contains the levers for moving the valve discs axially, and an actuator for the levers. When an external drive means pivots the chamber to a position where the discs are between the ports and axially aligned therewith, the actuator for the levers is energized to move the discs into sealing engagement with the ports.

  9. 12. INTERIOR VIEW OF GATE OPERATOR ROOM, SHOWING SLIDES GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    12. INTERIOR VIEW OF GATE OPERATOR ROOM, SHOWING SLIDES GATE OPERATORS, LOOKING NORTHWEST. - Sacramento River Water Treatment Plant Intake Pier & Access Bridge, Spanning Sacramento River approximately 175 feet west of eastern levee on river; roughly .5 mile downstream from confluence of Sacramento & American Rivers, Sacramento, Sacramento County, CA

  10. 5. GATE 5, INTAKE CHANNEL LOOKING SOUTH; WATER FROM GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. GATE 5, INTAKE CHANNEL LOOKING SOUTH; WATER FROM GATE 5 ENTERED DITCH AND IRRIGATED HONDIUS' FIELDS. - Hondius Water Line, 1.6 miles Northwest of Park headquarters building & 1 mile Northwest of Beaver Meadows entrance station, Estes Park, Larimer County, CO

  11. A novel optical gating method for laser gated imaging

    NASA Astrophysics Data System (ADS)

    Ginat, Ran; Schneider, Ron; Zohar, Eyal; Nesher, Ofer

    2013-06-01

    For the past 15 years, Elbit Systems is developing time-resolved active laser-gated imaging (LGI) systems for various applications. Traditional LGI systems are based on high sensitive gated sensors, synchronized to pulsed laser sources. Elbit propriety multi-pulse per frame method, which is being implemented in LGI systems, improves significantly the imaging quality. A significant characteristic of the LGI is its ability to penetrate a disturbing media, such as rain, haze and some fog types. Current LGI systems are based on image intensifier (II) sensors, limiting the system in spectral response, image quality, reliability and cost. A novel propriety optical gating module was developed in Elbit, untying the dependency of LGI system on II. The optical gating module is not bounded to the radiance wavelength and positioned between the system optics and the sensor. This optical gating method supports the use of conventional solid state sensors. By selecting the appropriate solid state sensor, the new LGI systems can operate at any desired wavelength. In this paper we present the new gating method characteristics, performance and its advantages over the II gating method. The use of the gated imaging systems is described in a variety of applications, including results from latest field experiments.

  12. 14. DETAIL: Gate recess at east gate area. Planking of ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    14. DETAIL: Gate recess at east gate area. Planking of chamber walls and spikes (rear corner) are clearly visible. - Wabash & Erie Canal, Lock No. 2, 8 miles east of Fort Wayne, adjacent to U.S. Route 24, New Haven, Allen County, IN

  13. Radial gate hoist mechanisms mounted above radial gates, view to ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Radial gate hoist mechanisms mounted above radial gates, view to the east - Wellton-Mohawk Irrigation System, Wasteway No. 1, Wellton-Mohawk Canal, North side of Wellton-Mohawk Canal, bounded by Gila River to North & the Union Pacific Railroad & Gila Mountains to south, Wellton, Yuma County, AZ

  14. 16. Little Hell Gate Bridge with Big Hell Gate Bridge ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    16. Little Hell Gate Bridge with Big Hell Gate Bridge in background. Wards Island, New York Co., NY. Sec. 4207, MP 8.02. - Northeast Railroad Corridor, Amtrak Route between New Jersey/New York & New York/Connecticut State Lines, New York County, NY

  15. 3. TAINTER GATES (LEFT FOREGROUND) AND ROLLING SECTOR GATE AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    3. TAINTER GATES (LEFT FOREGROUND) AND ROLLING SECTOR GATE AND SPILLWAY (BACKGROUND) OF THE NORTH CHANNEL DAM, LOOKING SOUTH. - Washington Water Power Company Post Falls Power Plant, North Channel Dam, West of intersection of Spokane & Fourth Streets, Post Falls, Kootenai County, ID

  16. High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

    SciTech Connect

    Wang, C. H. Hsu, W. C.; Doornbos, G.; Astromskas, G.; Vellianitis, G.; Oxland, R.; Holland, M. C.; Passlack, M.; Huang, M. L.; Lin, C. H.; Hsieh, C. H.; Chang, Y. S.; Lee, T. L.; Chen, Y. Y.; Diaz, C. H.; Ramvall, P.; Lind, E.; Wernersson, L.-E.; Droopad, R.

    2014-04-15

    Two high-k dielectric materials (Al{sub 2}O{sub 3} and HfO{sub 2}) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (D{sub it}). X-ray photoelectron spectroscopy analyses (XPS) for native oxides of (100) and (110) as-grown n-InAs epi wafers show an increase in As-oxide on the (100) surface and an increase in InOx on the (110) surface. In addition, XPS analyses of high-k (Al{sub 2}O{sub 3} and HfO{sub 2}) on n-InAs epi show that the intrinsic native oxide difference between (100) and (110) epi surfaces were eliminated by applying conventional in-situ pre-treatment (TriMethyAluminium (TMA)) before the high-k deposition. The capacitance-voltage (C-V) characterization of HfO{sub 2} and Al{sub 2}O{sub 3} MOSCAPs on both types of n-InAs surfaces shows very similar C-V curves. The interface trap density (D{sub it}) profiles show D{sub it} minima of 6.1 × 10{sup 12}/6.5 × 10{sup 12} and 6.6 × 10{sup 12}/7.3 × 10{sup 12} cm{sup −2} eV{sup −1} for Al{sub 2}O{sub 3} and HfO{sub 2}, respectively for (100) and (110) InAs surfaces. The similar interface trap density (D{sub it}) on (100) and (110) surface orientation were observed, which is beneficial to future InAs FinFET device with both (100) and (110) surface channel orientations present.

  17. Penn State DOE GATE Program

    SciTech Connect

    Anstrom, Joel

    2012-08-31

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  18. Gates Learns to Think Big

    ERIC Educational Resources Information Center

    Robelen, Erik W.

    2006-01-01

    This article discusses how the philanthropy of Microsoft Corp software magnate co-chairs, Bill Gates and his wife Melinda, are reshaping the American high school nowadays. Gates and his wife have put the issue on the national agenda like never before, with a commitment of more than 1.3 billion US dollars this decade toward the foundation's agenda…

  19. Responses of rat hippocampal slices in a high-K+ medium following in vivo global ischaemia.

    PubMed

    el-Sabban, F; Reid, K H; Edmonds, H L

    1998-01-01

    1. We hypothesized that burst activity induced in rat hippocampal tissue by a high-K+ medium in vitro would be increased by a previous episode of global ischaemia, severe enough to induce persistent neurological dysfunction. 2. Male Wistar rats that were subjected to 9 min of chest compression, sufficient to reduce blood pressure (BP) to zero, showed evidence of neurological damage attributed to a global ischaemic insult. Hindlimb function was impaired for 24-48 h and a susceptibility to sound-induced seizures was induced in 25 to 35 rats. The seizure susceptibility cleared spontaneously within 2 weeks in 10 of 25 rats. 3. Hippocampal slices from postischaemic rats were prepared, tested for viability and were then exposed to an 8.0 mmol/L K+ artificial cerebrospinal fluid in vitro. Spontaneous epileptiform bursting activity in the high-K+ medium was not increased. Instead, burst size decreased with time after ischaemia. 4. The decrement in bursting activity is attributed to loss of cellular activity or integrity. These changes correlate with functional changes described by others, but not necessarily to histologically verifiable cell death. The time course of these changes was remarkably long, continuing for almost 3 weeks. Thus, a less-than-lethal ischaemia appears to induce neuronal changes, possibly reversible, that continue for at least 20 days after the global ischaemic insult. PMID:9673437

  20. Elemental maps in human allantochorial placental vessels cells: 1. High K + and acetylcholine effects

    NASA Astrophysics Data System (ADS)

    Michelet-Habchi, C.; Barberet, Ph.; Dutta, R. K.; Guiet-Bara, A.; Bara, M.; Moretto, Ph.

    2003-09-01

    Regulation of vascular tone in the fetal extracorporeal circulation most likely depends on circulating hormones, local paracrine mechanisms and changes in membrane potential of vascular smooth muscle cells (VSMCs) and of vascular endothelial cells (VECs). The membrane potential is a function of the physiological activities of ionic channels (particularly, K + and Ca 2+ channels in these cells). These channels regulate the ionic distribution into these cells. Micro-particle induced X-ray emission (PIXE) analysis was applied to determine the ionic composition of VSMC and of VEC in the placental human allantochorial vessels in a physiological survival medium (Hanks' solution) modified by the addition of acetylcholine (ACh: which opens the calcium-sensitive K + channels, K Ca) and of high concentration of K + (which blocks the voltage-sensitive K + channels, K df). In VSMC (media layer), the addition of ACh induced no modification of the Na, K, Cl, P, S, Mg and Ca concentrations and high K + medium increased significantly the Cl and K concentrations, the other ion concentrations remaining constant. In endothelium (VEC), ACh addition implicated a significant increase of Na and K concentration, and high K + medium, a significant increase in Cl and K concentration. These results indicated the importance of K df, K Ca and K ATP channels in the regulation of K + intracellular distribution in VSMC and VEC and the possible intervention of a Na-K-2Cl cotransport and corroborated the previous electrophysiological data.

  1. Influence of the octupole mode on nuclear high-K isomeric properties

    NASA Astrophysics Data System (ADS)

    Minkov, Nikolay; Walker, Phil

    2014-05-01

    The influence of quadrupole-octupole deformations on the energy and magnetic properties of high-K isomeric states in even-even actinide (U, Pu, Cm, Fm, No), rare-earth (Nd, Sm and Gd), and superheavy (^{270}\\text{Ds}) nuclei is examined within a deformed shell model with pairing interaction. The neutron two-quasiparticle (2qp) isomeric energies and magnetic dipole moments are calculated over a wide range in the plane of quadrupole and octupole deformations. In most cases the magnetic moments exhibit a pronounced sensitivity to the octupole deformation. At the same time, the calculations outline three different groups of nuclei: with pronounced, shallow, and missing minima in the 2qp energy surfaces with respect to the octupole deformation. The result indicates regions of nuclei with octupole softness as well as with possible octupole deformation in the high-K isomeric states. These findings show the need for further theoretical analysis as well as of detailed experimental measurements of magnetic moments in heavy deformed nuclei.

  2. Effects of papaverine on carbachol- and high K+-induced contraction in the bovine abomasum

    PubMed Central

    KANEDA, Takeharu; SAITO, Erika; KANDA, Hidenori; URAKAWA, Norimoto; SHIMIZU, Kazumasa

    2015-01-01

    The effects of papaverine on carbachol (CCh) -and high K+- induced contraction in the bovine abomasum were investigated. Papaverine inhibited CCh (1 µM) -and KCl (65 mM) -induced contractions in a concentration-dependent manner. Forskolin or sodium nitroprusside inhibited CCh-induced contractions in a concentration-dependent manner in association with increases in the cAMP or cGMP contents, whereas papaverine increased cGMP contents only at 30 µM. Changes in the extracellular Ca2+ from 1.5 mM to 7.5 mM reduced verapamil-induced relaxation in high K+-depolarized muscles, but papaverine-induced relaxation did not change. Futhermore, papaverine (30 µM) and NaCN (300 µM) decreased the creatine phosphate contents. These results suggest that the relaxing effects of papaverine on the bovine abomasum are mainly due to the inhibition of aerobic energy metabolism. PMID:26018357

  3. The influence of carbon doping on the performance of Gd{sub 2}O{sub 3} as high-k gate dielectric

    SciTech Connect

    Shekhter, P.; Yehezkel, S.; Shriki, A.; Eizenberg, M.; Chaudhuri, A. R.; Osten, H. J.; Laha, A.

    2014-12-29

    One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd{sub 2}O{sub 3} layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures.

  4. Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications

    NASA Astrophysics Data System (ADS)

    Niu, D.; Ashcraft, R. W.; Kelly, M. J.; Chambers, J. J.; Klein, T. M.; Parsons, G. N.

    2002-05-01

    This article describes the kinetics of reactions that result in substrate consumption during formation of ultrathin transition metal oxides on silicon. Yttrium silicate films (˜40 Å) with an equivalent silicon dioxide thickness of ˜11 Å are demonstrated by physical vapor deposition (PVD) routes. Interface reactions that occur during deposition and during postdeposition treatment are observed and compared for PVD and chemical vapor deposition (CVD) yttrium oxides and CVD aluminum-oxide systems. Silicon diffusion, metal-silicon bond formation, and reactions involving hydroxides are proposed as critical processes in interface layer formation. For PVD of yttrium silicate, oxidation is thermally activated with an effective barrier of 0.3 eV, consistent with the oxidation of silicide being the rate-limited step. For CVD aluminum oxide, interface oxidation is consistent with a process limited by silicon diffusion into the deposited oxide layer.

  5. Dry-etching properties of TiN for metal/high-k gate stack using BCl{sub 3}-based inductively coupled plasma

    SciTech Connect

    Kim, Dong-Pyo; Yang Xue; Woo, Jong-Chang; Um, Doo-Seung; Kim, Chang-Il

    2009-11-15

    The etch rate of TiN film and the selectivities of TiN/SiO{sub 2} and TiN/HfO{sub 2} were systematically investigated in Cl{sub 2}/BCl{sub 3}/Ar plasmas as functions of Cl{sub 2} flow rate, radio-frequency (rf) power, and direct-current (dc) bias voltage under different substrate temperatures of 10 and 80 degree sign C. The etch rate of TiN films increased with increasing Cl{sub 2} flow rate, rf power, and dc-bias voltage at a fixed substrate temperature. In addition, the etch rate of TiN films at 80 degree sign C were higher than that at 10 degree sign C when other plasma parameters were fixed. However, the selectivities of TiN/SiO{sub 2} and TiN/HfO{sub 2} showed different tendencies compared with etch-rate behavior as a function of rf power and dc bias voltage. The relative-volume densities of Ar (750.0 nm), Cl (725.2 nm), and Cl{sup +} (386.6 nm) were monitored with an optical-emission spectroscopy. When rf power increased, the relative-volume densities of all studied particles were increased. X-ray photoelectron spectroscopy was carried out to detect nonvolatile etch by-products from the surface, and nonvolatile peaks (TiCl{sub x} bonds) in Ti 2p and Cl 2p were observed due to their high melting points. Based on the experimental results, we can conclude that the TiN etch is dependent on the substrate temperature when other plasma parameters are fixed. This can be explained by the enhanced chemical pathway with the assistance of ion bombardment.

  6. Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

    SciTech Connect

    Vitale, Steven A.; Wyatt, Peter W.; Hodson, Chris J.

    2012-01-15

    Atomic layer deposition (ALD) of high-quality gadolinium oxide thin films is achieved using Gd(iPrCp){sub 3} and O{sub 2} plasma. Gd{sub 2}O{sub 3} growth is observed from 150 to 350 deg. C, though the optical properties of the film improve at higher temperature. True layer-by-layer ALD growth of Gd{sub 2}O{sub 3} occurred in a relatively narrow window of temperature and precursor dose. A saturated growth rate of 1.4 A/cycle was observed at 250 deg. C. As the temperature increases, high-quality films are deposited, but the growth mechanism appears to become CVD-like, indicating the onset of precursor decomposition. At 250 deg. C, the refractive index of the film is stable at {approx}1.80 regardless of other deposition conditions, and the measured dispersion characteristics are comparable to those of bulk Gd{sub 2}O{sub 3}. XPS data show that the O/Gd ratio is oxygen deficient at 1.3, and that it is also very hygroscopic. The plasma etching rate of the ALD Gd{sub 2}O{sub 3} film in a high-density helicon reactor is very low. Little difference is observed in etching rate between Cl{sub 2} and pure Ar plasmas, suggesting that physical sputtering dominates the etching. A threshold bias power exists below which etching does not occur; thus it may be possible to etch a metal gate material and stop easily on the Gd{sub 2}O{sub 3} gate dielectric. The Gd{sub 2}O{sub 3} film has a dielectric constant of about 16, exhibits low C-V hysteresis, and allows a 50 x reduction in gate leakage compared to SiO{sub 2}. However, the plasma enhanced atomic layer deposition (PE-ALD) process causes formation of an {approx}1.8 nm SiO{sub 2} interfacial layer, and generates a fixed charge of -1.21 x 10{sup 12} cm{sup -2}, both of which may limit use of PE-ALD Gd{sub 2}O{sub 3} as a gate dielectric.

  7. Ferroelectric gated electrical transport in CdS nanotetrapods.

    PubMed

    Fu, Wangyang; Qin, Shengyong; Liu, Lei; Kim, Tae-Hwan; Hellstrom, Sondra; Wang, Wenlong; Liang, Wenjie; Bai, Xuedong; Li, An-Ping; Wang, Enge

    2011-05-11

    Complex nanostructures such as branched semiconductor nanotetrapods are promising building blocks for next-generation nanoelectronics. Here we report on the electrical transport properties of individual CdS tetrapods in a field effect transistor (FET) configuration with a ferroelectric Ba(0.7)Sr(0.3)TiO(3) film as high-k, switchable gate dielectric. A cryogenic four-probe scanning tunneling microscopy (STM) is used to probe the electrical transport through individual nanotetrapods at different temperatures. A p-type field effect is observed at room temperature, owing to the enhanced gate capacitance coupling. And the reversible remnant polarization of the ferroelectric gate dielectric leads to a well-defined nonvolatile memory effect. The field effect is shown to originate from the channel tuning in the arm/core/arm junctions of nanotetrapods. At low temperature (8.5 K), the nanotetrapod devices exhibit a ferroelectric-modulated single-electron transistor (SET) behavior. The results illustrate how the characteristics of a ferroelectric such as switchable polarization and high dielectric constant can be exploited to control the functionality of individual three-dimensional nanoarchitectures. PMID:21513340

  8. Impact of post metal annealing on gate work function engineering for advanced MOS applications

    NASA Astrophysics Data System (ADS)

    Kumar, S. Sachin; Prasad, Amitesh; Sinha, Amrita; Raut, Pratikhya; Das, Palash; Mahato, S. S.; Mallik, S.

    2016-05-01

    Ultra thin HfO2 high-k gate dielectric has been deposited directly on strained Si0.81Ge0.19 by Atomic Layer Deposition (ALD) technique. The influence of different types of metal gate electrodes (Al, Au, Pt) on electrical characteristics of Metal-Oxide-Semiconductor capacitors has been studied. Our results show that the electrical characteristics of MOS device are highly dependent on the gate electrodes used. The dependency of electrical characteristics on post metal annealing was studied in detail. The measured flat band (Vfb) and hysteresis (ΔVfb) from high frequency C-V characteristics were used to study the pre-existing traps in the dielectric. Impact of PMA on interface state density (Dit), border trap density (Nbt) and oxide trap density (Qf/q) of high-k gate stack were also examined for all the devices. The Nbt and frequency dispersion significantly reduces to ~2.77x1010 cm-2 and ~11.34 % respectively in case of Al electrode with a Dit value of ~4x1012 eV-1cm-2 after PMA (350°C) in N2, suggesting an improvement in device performance while Pt electrode shows a much less value of ΔVfb (~0.02 V) and Dit (~3.44x1012 eV-1cm-2) after PMA.

  9. Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)

    NASA Astrophysics Data System (ADS)

    Choi, Woo Young; Lee, Hyun Kook

    2016-06-01

    The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scaling supply voltage is the most effective way for low-power consumption, performance degradation is occurred for metal-oxide-semiconductor field-effect transistors (MOSFETs) when supply voltage is reduced because subthreshold swing (SS) of MOSFETs cannot be lower than 60 mV/dec. Thus, in this thesis, hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) are investigated as one of the most promising alternatives to MOSFETs. By replacing source-side gate insulator with a high- k material, HG TFETs show higher on-current, suppressed ambipolar current and lower SS than conventional TFETs. Device design optimization through simulation was performed and fabrication based on simulation demonstrated that performance of HG TFETs were better than that of conventional TFETs. Especially, enlargement of gate insulator thickness while etching gate insulator at the source side was improved by introducing HF vapor etch process. In addition, the proposed HG TFETs showed higher performance than our previous results by changing structure of sidewall spacer by high- k etching process.

  10. 1500 Gate standard cell compatible radiation hard gate array

    SciTech Connect

    Mills, B.D.; Shafer, B.D.; Melancon, E.P.

    1984-11-01

    The G1500 gate array combines Sandia Labs' 4/3..mu.. CMOS silicon gate radiation hard process with a novel gate isolated standard cell compatible design for quick turnaround time, low cost, and radiation hardness. This device is hard to 5 x 10/sup 5/ rads, utilizes a configuration that provides high packing density, and is supported on both the Daisy and Mentor workstations. This paper describes Sandia Labs' radiation hard 4/3..mu.. process, the G1500's unique design, and the complete design capabilities offered by the workstations.

  11. Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET

    NASA Astrophysics Data System (ADS)

    Jin, Zhang; Yuling, Liu; Chenqi, Yan; Yangang, He; Baohong, Gao

    2016-04-01

    The replacement metal gate (RMG) defectivity performance control is very challenging in high-k metal gate (HKMG) chemical mechanical polishing (CMP). In this study, three major defect types, including fall-on particles, micro-scratch and corrosion have been investigated. The research studied the effects of polishing pad, pressure, rotating speed, flow rate and post-CMP cleaning on the three kinds of defect, which finally eliminated the defects and achieved good surface morphology. This study will provide an important reference value for the future research of aluminum metal gate CMP. Project supported by the Major National Science and Technology Special Projects (No. 2009ZX02308), the Natural Science Foundation for the Youth of Hebei Province (Nos. F2012202094, F2015202267), and the Outstanding Youth Science and Technology Innovation Fund of Hebei University of Technology (No. 2013010).

  12. A charge transport study in diamond, surface passivated by high-k dielectric oxides

    SciTech Connect

    Kovi, Kiran Kumar Majdi, Saman; Gabrysch, Markus; Isberg, Jan

    2014-11-17

    The recent progress in the growth of high-quality single-crystalline diamond films has sparked interest in the realization of efficient diamond power electronic devices. However, finding a suitable passivation is essential to improve the reliability and electrical performance of devices. In the current work, high-k dielectric materials such as aluminum oxide and hafnium oxide were deposited by atomic layer deposition on intrinsic diamond as a surface passivation layer. The hole transport properties in the diamond films were evaluated and compared to unpassivated films using the lateral time-of-flight technique. An enhancement of the near surface hole mobility in diamond films of up to 27% is observed when using aluminum oxide passivation.

  13. Graphene liquid crystal retarded percolation for new high-k materials.

    PubMed

    Yuan, Jinkai; Luna, Alan; Neri, Wilfrid; Zakri, Cécile; Schilling, Tanja; Colin, Annie; Poulin, Philippe

    2015-01-01

    Graphene flakes with giant shape anisotropy are extensively used to establish connectedness electrical percolation in various heterogeneous systems. However, the percolation behaviour of graphene flakes has been recently predicted to be far more complicated than generally anticipated on the basis of excluded volume arguments. Here we confirm experimentally that graphene flakes self-assemble into nematic liquid crystals below the onset of percolation. The competition of percolation and liquid crystal transition provides a new route towards high-k materials. Indeed, near-percolated liquid-crystalline graphene-based composites display unprecedented dielectric properties with a dielectric constant improved by 260-fold increase as compared with the polymer matrix, while maintaining the loss tangent as low as 0.4. This performance is shown to depend on the structure of monodomains of graphene liquid-crystalline phases. Insights into how the liquid crystal phase transition interferes with percolation transition and thus alters the dielectric constant are discussed. PMID:26567720

  14. Graphene liquid crystal retarded percolation for new high-k materials

    NASA Astrophysics Data System (ADS)

    Yuan, Jinkai; Luna, Alan; Neri, Wilfrid; Zakri, Cécile; Schilling, Tanja; Colin, Annie; Poulin, Philippe

    2015-11-01

    Graphene flakes with giant shape anisotropy are extensively used to establish connectedness electrical percolation in various heterogeneous systems. However, the percolation behaviour of graphene flakes has been recently predicted to be far more complicated than generally anticipated on the basis of excluded volume arguments. Here we confirm experimentally that graphene flakes self-assemble into nematic liquid crystals below the onset of percolation. The competition of percolation and liquid crystal transition provides a new route towards high-k materials. Indeed, near-percolated liquid-crystalline graphene-based composites display unprecedented dielectric properties with a dielectric constant improved by 260-fold increase as compared with the polymer matrix, while maintaining the loss tangent as low as 0.4. This performance is shown to depend on the structure of monodomains of graphene liquid-crystalline phases. Insights into how the liquid crystal phase transition interferes with percolation transition and thus alters the dielectric constant are discussed.

  15. Theory of an improved vertical power MOSFET using high-k insulator

    NASA Astrophysics Data System (ADS)

    Huang, Mingmin; Chen, Xingbi

    2015-12-01

    An improved structure of the vertical power MOSFET using high-k insulator (Hk-MOSFET), which has a better relationship between specific on-resistance (Ron) and breakdown voltage (VB) than the conventional Hk-MOSFET and the superjunction MOSFET, is studied. An analytic model of this improved Hk-MOSFET is proposed, which can be used to well explain the physical reason of the improvement as well as to obtain an optimal design. It is found that the theoretical results match well with the numerical simulation results, where the errors of VB and Ron are both less than 7%. Moreover, the numerical simulation results show that, with the guidance of the proposed analytic model, Ron of the improved Hk-MOSFET can be optimized to be about 30%-50% lower than that of the conventional Hk-MOSFET with VB = 300-1000 V.

  16. Graphene liquid crystal retarded percolation for new high-k materials

    PubMed Central

    Yuan, Jinkai; Luna, Alan; Neri, Wilfrid; Zakri, Cécile; Schilling, Tanja; Colin, Annie; Poulin, Philippe

    2015-01-01

    Graphene flakes with giant shape anisotropy are extensively used to establish connectedness electrical percolation in various heterogeneous systems. However, the percolation behaviour of graphene flakes has been recently predicted to be far more complicated than generally anticipated on the basis of excluded volume arguments. Here we confirm experimentally that graphene flakes self-assemble into nematic liquid crystals below the onset of percolation. The competition of percolation and liquid crystal transition provides a new route towards high-k materials. Indeed, near-percolated liquid-crystalline graphene-based composites display unprecedented dielectric properties with a dielectric constant improved by 260-fold increase as compared with the polymer matrix, while maintaining the loss tangent as low as 0.4. This performance is shown to depend on the structure of monodomains of graphene liquid-crystalline phases. Insights into how the liquid crystal phase transition interferes with percolation transition and thus alters the dielectric constant are discussed. PMID:26567720

  17. Gate protective device for insulated gate field-effect transistors

    NASA Technical Reports Server (NTRS)

    Sunshine, R. A.

    1972-01-01

    Device, which protects insulated gate field-effect transistors, improves reliability through utilization of layers of conductive material on top of each alternating semiconductor material region. Separation of layers is necessary to prevent shorting out junctions between alternating regions.

  18. Reversible logic gates on Physarum Polycephalum

    SciTech Connect

    Schumann, Andrew

    2015-03-10

    In this paper, we consider possibilities how to implement asynchronous sequential logic gates and quantum-style reversible logic gates on Physarum polycephalum motions. We show that in asynchronous sequential logic gates we can erase information because of uncertainty in the direction of plasmodium propagation. Therefore quantum-style reversible logic gates are more preferable for designing logic circuits on Physarum polycephalum.

  19. 49 CFR 234.223 - Gate arm.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Gate arm. 234.223 Section 234.223 Transportation... SYSTEMS Maintenance, Inspection, and Testing Maintenance Standards § 234.223 Gate arm. Each gate arm, when... maintained in a condition sufficient to be clearly viewed by approaching highway users. Each gate arm...

  20. 49 CFR 234.223 - Gate arm.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false Gate arm. 234.223 Section 234.223 Transportation... SYSTEMS Maintenance, Inspection, and Testing Maintenance Standards § 234.223 Gate arm. Each gate arm, when... maintained in a condition sufficient to be clearly viewed by approaching highway users. Each gate arm...

  1. 49 CFR 234.223 - Gate arm.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false Gate arm. 234.223 Section 234.223 Transportation... SYSTEMS Maintenance, Inspection, and Testing Maintenance Standards § 234.223 Gate arm. Each gate arm, when... maintained in a condition sufficient to be clearly viewed by approaching highway users. Each gate arm...

  2. 49 CFR 234.223 - Gate arm.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Gate arm. 234.223 Section 234.223 Transportation... Maintenance Standards § 234.223 Gate arm. Each gate arm, when in the downward position, shall extend across... clearly viewed by approaching highway users. Each gate arm shall start its downward motion not less...

  3. 49 CFR 234.223 - Gate arm.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Gate arm. 234.223 Section 234.223 Transportation... Maintenance Standards § 234.223 Gate arm. Each gate arm, when in the downward position, shall extend across... clearly viewed by approaching highway users. Each gate arm shall start its downward motion not less...

  4. Multiple gates on working memory

    PubMed Central

    Chatham, Christopher H; Badre, David

    2015-01-01

    The contexts for action may be only transiently visible, accessible, and relevant. The corticobasal ganglia (BG) circuit addresses these demands by allowing the right motor plans to drive action at the right times, via a BG-mediated gate on motor representations. A long-standing hypothesis posits these same circuits are replicated in more rostral brain regions to support gating of cognitive representations. Key evidence now supports the prediction that BG can act as a gate on the input to working memory, as a gate on its output, and as a means of reallocating working memory representations rendered irrelevant by recent events. These discoveries validate key tenets of many computational models, circumscribe motor and cognitive models of recurrent cortical dynamics alone, and identify novel directions for research on the mechanisms of higher-level cognition. PMID:26719851

  5. Shortcut to adiabatic gate teleportation

    NASA Astrophysics Data System (ADS)

    Santos, Alan C.; Silva, Raphael D.; Sarandy, Marcelo S.

    2016-01-01

    We introduce a shortcut to the adiabatic gate teleportation model of quantum computation. More specifically, we determine fast local counterdiabatic Hamiltonians able to implement teleportation as a universal computational primitive. In this scenario, we provide the counterdiabatic driving for arbitrary n -qubit gates, which allows to achieve universality through a variety of gate sets. Remarkably, our approach maps the superadiabatic Hamiltonian HSA for an arbitrary n -qubit gate teleportation into the implementation of a rotated superadiabatic dynamics of an n -qubit state teleportation. This result is rather general, with the speed of the evolution only dictated by the quantum speed limit. In particular, we analyze the energetic cost for different Hamiltonian interpolations in the context of the energy-time complementarity.

  6. The Gates, 1979-2005

    ERIC Educational Resources Information Center

    School Arts: The Art Education Magazine for Teachers, 2005

    2005-01-01

    One art critic called it pure Despite the mixed reviews of Christo and Jeanne-Claude's temporary art installation in New York's Central Park, the public reaction to The Gates was largely positive.The Gates consisted of 7,500 orange PVC frames straddling the park's walkways that varied in widths from 5 1/2 feet to 18 feet. Eight-foot-long ripstop…

  7. A molecular logic gate

    PubMed Central

    Kompa, K. L.; Levine, R. D.

    2001-01-01

    We propose a scheme for molecule-based information processing by combining well-studied spectroscopic techniques and recent results from chemical dynamics. Specifically it is discussed how optical transitions in single molecules can be used to rapidly perform classical (Boolean) logical operations. In the proposed way, a restricted number of states in a single molecule can act as a logical gate equivalent to at least two switches. It is argued that the four-level scheme can also be used to produce gain, because it allows an inversion, and not only a switching ability. The proposed scheme is quantum mechanical in that it takes advantage of the discrete nature of the energy levels but, we here discuss the temporal evolution, with the use of the populations only. On a longer time range we suggest that the same scheme could be extended to perform quantum logic, and a tentative suggestion, based on an available experiment, is discussed. We believe that the pumping can provide a partial proof of principle, although this and similar experiments were not interpreted thus far in our terms. PMID:11209046

  8. Latest design of gate valves

    SciTech Connect

    Kurzhofer, U.; Stolte, J.; Weyand, M.

    1996-12-01

    Babcock Sempell, one of the most important valve manufacturers in Europe, has delivered valves for the nuclear power industry since the beginning of the peaceful application of nuclear power in the 1960s. The latest innovation by Babcock Sempell is a gate valve that meets all recent technical requirements of the nuclear power technology. At the moment in the United States, Germany, Sweden, and many other countries, motor-operated gate and globe valves are judged very critically. Besides the absolute control of the so-called {open_quotes}trip failure,{close_quotes} the integrity of all valve parts submitted to operational forces must be maintained. In case of failure of the limit and torque switches, all valve designs have been tested with respect to the quality of guidance of the gate. The guidances (i.e., guides) shall avoid a tilting of the gate during the closing procedure. The gate valve newly designed by Babcock Sempell fulfills all these characteristic criteria. In addition, the valve has cobalt-free seat hardfacing, the suitability of which has been proven by friction tests as well as full-scale blowdown tests at the GAP of Siemens in Karlstein, West Germany. Babcock Sempell was to deliver more than 30 gate valves of this type for 5 Swedish nuclear power stations by autumn 1995. In the presentation, the author will report on the testing performed, qualifications, and sizing criteria which led to the new technical design.

  9. The Meaning of High K2O Volcanism In the U.S. Cordillera

    NASA Astrophysics Data System (ADS)

    Putirka, K. D.; Busby, C.

    2010-12-01

    K2O contents provide a highly effective discriminant between volcanic rocks erupted in the Cascades and Basin-and Range-provinces, with Cascades volcanics having lower K2O contents at a given SiO2. To differentiate these suites, we use a K-index, where K-index = K2Oobserved - 0.12[SiO2] + 5.1 (oxides in wt. %). In the Sierra Nevada, regional K2O contents are not controlled by wall-rock assimilation. In addition, none are candidates for K-metasomatism, and none are likely to be derived by partial melting of a K-metasomatized source. As to the latter issue, even volcanic rocks with the highest K2O in the Sierra Nevada have K2O/Na2O <5, and most such ratios are <3. In contrast, K-metasomatized rocks have K2O/Na2O >5, and as high as 30-40 (Brooks and Snee (1996). Also, Sierra-wide K2O variations are not connected to indices of subduction-related mantle enrichments (such as La/Nb, Ba/Nb or Sr/P2O5), and so K2O is unconnected to regional variations in source composition. K2O contents are instead controlled by the degree of partial melting (F) in the mantle source and fractional crystallization. Putirka and Busby (2007) show that maximum K2O in the Sierra increases with increasing crust thickness, and this relationship also holds across the U.S. the Cordillera (at 39oN latitude). This relationship implies that low F magmas more easily transit thick, low-density upper crust (Putirka and Busby, 2007), which is a consequence of the fact that low F melts are enriched not just in K2O, but also in H2O, which greatly lowers magma density (Ochs and Lange, 1999). This model can explain the contrast in Cascade and Basin-and-Range K2O contents: the modern Cascades are built on the thinner crust of accreted terranes, while typical Basin-and-Range volcanics are erupted on older, and thicker, cratonized crust. Mean crust density, however, cannot be the only explanation of high K2O. In the central Sierra Nevada, the Colorado River Extensional Corridor, and at the Lunar Crater

  10. Nonvolatile Quantum Dot Gate Memory (NVQDM): Tunneling Rate from Quantum Well Channel to Quantum Dot Gate

    NASA Astrophysics Data System (ADS)

    Hasaneen, El-Sayed; Heller, Evan; Bansal, Rajeev; Jain, Faquir

    2003-10-01

    In this paper, we compute the tunneling of electrons in a nonvolatile quantum dot memory (NVQDM) cell during the WRITE operation. The transition rate of electrons from a quantum well channel to the quantum dots forming the floating gate is calculated using a recently reported method by Chuang et al.[1]. Tunneling current is computed based on transport of electrons from the channel to the floating quantum dots. The maximum number of electrons on a dot is calculated using surface electric field and break down voltage of the tunneling dielectric material. Comparison of tunneling for silicon oxide and high-k dielectric gate insulators is also described. Capacitance-Voltage characteristics of a NVQDM device are calculated by solving the Schrodinger and Poisson equations self-consistently. In addition, the READ operation of the memory has been investigated analytically. Results for 70 nm channel length Si NVQDMs are presented. Threshold voltage is calculated including the effect of the charge on nanocrystal quantum dots. Current-voltage characteristics are obtained using BSIM3v3 model [2-3]. This work is supported by Office of Navel Research (N00014210883, Dr. D. Purdy, Program Monitor), Connecticut Innovations Inc./TranSwitch (CII # 00Y17), and National Science Foundation (CCR-0210428) grants. [1] S. L. Chuang and N. Holonyak, Appl. Phys. Lett., 80, pp. 1270, 2002. [2] Y. Chen et. al., BSIM3v3 Manual, Elect. Eng. and Comp. Dept., U. California, Berkeley, CA, 1996. [3] W. Liu, MOSFET Models for SPICE Simulation, John Wiley & Sons, Inc., 2001.

  11. Charge-plasma based dual-material and gate-stacked architecture of junctionless transistor for enhanced analog performance

    NASA Astrophysics Data System (ADS)

    Amin, S. Intekhab; Sarin, R. K.

    2015-12-01

    Charge plasma based doping-less dual material double gate (DL-DMDG) junctionless transistor (JLT) is proposed. This paper also demonstrate the potential impact of gate stacking (GS) (high-k + Sio2) on DL-DMDG (DL-GSDMDG) JLT device. The efficient charge plasma is created in an intrinsic silicon film to form n + source/drain (S/D) by selecting proper work function of S/D electrode which helps to minimize threshold voltage fluctuation that occurs in a heavily doped JLT device. The analog performance parameters are analyzed for both the device structures. Results are also compared with conventional dual material double gate (DMDG) and gate stacked dual material double gate (GSDMDG) JLT devices. A DL-DMDG JLT device shows improved early voltage (VEA), intrinsic gain (AV = gm/gDS) and reduced output conductance (gDS) as compared to conventional DMDG and GSDMDG JLT devices. These values are further improved for DL-GSDMDG JLT. The effect of control gate length (L1) for a fixed gate length (L = L1+L2) are also analyzed.

  12. Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices

    NASA Astrophysics Data System (ADS)

    Zuozhen, Fu; Huaxiang, Yin; Xiaolong, Ma; Shumin, Chai; Jianfeng, Gao; Dapeng, Chen

    2013-06-01

    The optimizations to metal gate structure and film process were extensively investigated for great metal-gate stress (MGS) in 20 nm high-k/metal-gate-last (HK/MG-last) nMOS devices. The characteristics of advanced MGS technologies on device performances were studied through a process and device simulation by TCAD tools. The metal gate electrode with different stress values (0 to -6 GPa) was implemented in the device simulation along with other traditional process-induced-strain (PIS) technologies like e-SiC and nitride capping layer. The MGS demonstrated a great enhancing effect on channel carriers transporting in the device as device pitch scaling down. In addition, the novel structure for a tilted gate electrode was proposed and relationships between the tilt angle and channel stress were investigated. Also with a new method of fully stressed replacement metal gate (FSRMG) and using plane-shape-HfO to substitute U-shape-HfO, the effect of MGS was improved. For greater film stress in the metal gate, the process conditions for physical vapor deposition (PVD) TiNx were optimized. The maximum compressive stress of -6.5 GPa TiNx was achieved with thinner film and greater RF power as well as about 6 sccm N ratio.

  13. Perpendicular magnetic anisotropy in thin ferromagnetic films adjacent to high-k oxides

    NASA Astrophysics Data System (ADS)

    Xu, Meng; Bi, Chong; Rosales, Marcus; Newhouse-Illige, Ty; Almasi, Hamid; Wang, Weigang

    2015-03-01

    Perpendicular magnetic anisotropy (PMA) in thin ferromagnetic films has attracted a great deal of attention due to interesting physics and promising application in spintronic devices. The strength of PMA is often found to be strongly influenced by the adjacent heavy metal layer and oxide layer. A strong interest has emerged recently to control the PMA of these ultra-thin films by electric fields. Here we report the fabrication and characterization of perpendicularly magnetized 3d transitional metal films next to high-k oxides such as HfO2 and ZrO2. We have investigated structural, magnetic and transport properties of these films. The PMA strongly depends on the thickness of the ferromagnetic layers and the interfacial oxidation level of the bilayers. We will also discuss electric field controlled magnetic properties in these systems. This work was supported in part by NSF (ECCS-1310338) and by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  14. Identification of yrast high-K intrinsic states in {sup 188}Os

    SciTech Connect

    Modamio, V.; Jungclaus, A.; Podolyak, Zs.; Shi, Y.; Xu, F. R.; Algora, A.; Escrig, D.; Fraile, L. M.; Marginean, N.; Martinez, T.; Napoli, D. R.; Schwengner, R.; Ur, C. A.

    2009-02-15

    The high-spin structure of the Z=76 nucleus {sup 188}Os has been studied using the incomplete fusion reaction {sup 7}Li+{sup 186}W. A K{sup {pi}}=10{sup +} band has been established up to spin (24{sup +}) and its crossing with the ground-state band has been studied. In addition, intrinsic high-K states have been identified and on top of two of them, K{sup {pi}}=7{sup -} and K{sup {pi}}=10{sup -}, regular bands have been observed. The K{sup {pi}}=16{sup +} and K{sup {pi}}=18{sup +} states are yrast whereas the K{sup {pi}}=14{sup +} level lies only 33 keV above the yrast line and decays with a low reduced hindrance of f{sub {nu}}<1.3 to the ground-state band ({delta}K=14). The results are discussed by means of a systematic comparison with the even-even neighboring nucleus {sup 186}Os. Configuration-constrained multiquasiparticle potential-energy-surface calculations have been performed to identify the configurations of multiquasiparticle states.

  15. High-k Dielectric Passivation: Novel Considerations Enabling Cell Specific Lysis Induced by Electric Fields.

    PubMed

    Wassermann, Klemens J; Barth, Sven; Keplinger, Franz; Noehammer, Christa; Peham, Johannes R

    2016-08-24

    A better understanding of the electrodynamic behavior of cells interacting with electric fields would allow for novel scientific insights and would lead to the next generation of cell manipulation, diagnostics, and treatment. Here, we introduce a promising electrode design by using metal oxide high-k dielectric passivation. The thermally generated dielectric passivation layer enables efficient electric field coupling to the fluid sample comprising cells while simultaneously decoupling the electrode ohmically from the electrolyte, allowing for better control and adjustability of electric field effects due to reduced electrochemical reactions at the electrode surface. This approach demonstrates cell-size specific lysis with electric fields in a microfluidic flow-through design resulting in 99.8% blood cell lysis at 6 s exposure without affecting the viability of Gram-positive and Gram-negative bacterial spike-ins. The advantages of this new approach can support next-generation investigations of electrodynamics in biological systems and their exploitation for cell manipulation in multiple fields of medicine, life science, and industry. PMID:27466697

  16. Psychometrics and life history strategy: the structure and validity of the High K Strategy Scale.

    PubMed

    Copping, Lee T; Campbell, Anne; Muncer, Steven

    2014-01-01

    In this paper, we critically review the conceptualization and implementation of psychological measures of life history strategy associated with Differential K theory. The High K Strategy Scale (HKSS: Giosan, 2006) was distributed to a large British sample (n = 809) with the aim of assessing its factor structure and construct validity in relation to theoretically relevant life history variables: age of puberty, age of first sexual encounter, and number of sexual partners. Exploratory and confirmatory factor analyses indicated that the HKSS in its current form did not show an adequate statistical fit to the data. Modifications to improve fit indicated four correlated factors (personal capital, environmental stability, environmental security, and social capital). Later puberty in women was positively associated with measures of the environment and personal capital. Among men, contrary to Differential K predictions but in line with female mate preferences, earlier sexual debut and more sexual partners were positively associated with more favorable environments and higher personal and social capital. We raise concerns about the use of psychometric indicators of lifestyle and personality as proxies for life history strategy when they have not been validated against objective measures derived from contemporary life history theory and when their status as causes, mediators, or correlates has not been investigated. PMID:25299760

  17. High-k dielectric characterization by VUV spectroscopic ellipsometry and X-ray reflection

    NASA Astrophysics Data System (ADS)

    Boher, P.; Evrard, P.; Piel, J. P.; Defranoux, C.; Fouere, J. C.; Bellandi, E.; Bender, H.

    2003-09-01

    In this study, we use vacuum UV spectroscopic ellipsometry (VUVSE) to characterize new high dielectric materials. Indeed, all the candidates for high k dielectrics become strongly absorbent when the wavelength is reduced down to 140nm. So, the correlation between thickness and refractive index is reduced in the VUV range and much more precise structural information can be deduced. HfO2, Al2O3 and mixed HfAlOx layers have been studied with and without thin SiO2 oxide at the interface. X-ray reflectometry (XRR) has been used to measure precisely the layer thickness and roughness. The two techniques are included in the same automated metrology system dedicated to 300mm technology which is also presented. We show in particular that VUVSE can detect the crystalline character of the layers and their composition can be measured in addition to the layer thickness. Results are compared to those obtained by transmission electron microscopy (TEM), x-ray fluorescence analysis (XRF) and x-ray photoemission (XPS).

  18. High [K+] alters the stimulus-hydrosmotic response coupling in toad bladder.

    PubMed

    Grosso, A; de Sousa, R C

    1984-04-01

    Substitution of K+ for Na+ in the Ringer solution bathing the inner surface of toad urinary bladders (Bufo marinus) had no effect on basal water permeability but significantly altered the stimulus-hydrosmotic response of this epithelium. In chloride-Ringer, high [K+] increased the hydrosmotic responses to submaximal stimulations induced by vasopressin or exogenous cAMP, while the responses to theophylline or serosal hypertonicity were decreased. In sulfate-Ringer, all these responses were enhanced but for that induced by serosal hypertonicity which was actually diminished. As a step towards determining if Ca2+ might mediate the K+-induced effects on water flow, experiments were conducted either in the presence of a Ca2+ "antagonist" (cobalt) or in nominally Ca2+-free Ringer. In both conditions the hydrosmotic effects of vasopressin and cAMP were markedly reduced. The results raise the possibility that a transient Ca2+ influx through voltage-sensitive, Co2+-blockade Ca2+ channels may play a role in the stimulus-hydrosmotic response of toad urinary bladder. PMID:6087265

  19. Single event gate rupture in thin gate oxides

    SciTech Connect

    Sexton, F.W.; Fleetwood, D.M.; Shaneyfelt, M.R.; Dodd, P.E.; Hash, G.L.

    1997-06-01

    As integrated circuit densities increase with each new technology generation, both the lateral and vertical dimensions shrink. Operating voltages, however, have not scaled as aggressively as feature size, with a resultant increase in the electric fields within advanced geometry devices. Oxide electric fields are in fact increasing to greater than 5 MV/cm as feature size approaches 0.1 {micro}m. This trend raises the concern that single event gate rupture (SEGR) may limit the scaling of advanced integrated circuits (ICs) for space applications. The dependence of single event gate rupture (SEGR) critical field on oxide thickness is examined for thin gate oxides. Critical field for SEGR increases with decreasing oxide thickness, consistent with an increasing intrinsic breakdown field.

  20. Vertical gating of sketched nanodevices

    NASA Astrophysics Data System (ADS)

    Pai, Yun-Yi; Park, Dong-Wook; Huang, Mengchen; Annadi, Anil; Lee, Hyungwoo; Ma, Zhenqiang; Eom, Chang-Beom; Irvin, Patrick; Levy, Jeremy

    Conductive-atomic force microscope (c-AFM) lithography at the LaAlO3/SrTiO3 interface has enabled the creation of various classes of nanostructures, such as nanoscale transistors, single-electron transistors and has proven to be a promising testbed for mesoscopic physics. To date, these devices have used lithographically-defined side gates, which are limited by leakage currents. To reduce leakage and improve the electric field effect, we have investigated nanostructures with in-situ grown gold top gate. We will discuss designs of logic devices such as inverters, NAND, and NOR gates. In the quantum regime, we compare the performance of in-situ vertical top gates and that of written coplanar side gates with Quantum Dot devices. We gratefully acknowledge financial support from the following agencies and grants: AFOSR (FA9550-­10-­1­-0524(JL), FA9550-­12-­1-­0342(CBE)), NSF (DMR­1124131 (JL, CBE) and DMR­1234096 (CBE)), ONR (N00014-15-1-2847 (JL)).

  1. Low Na, High K Diet and the Role of Aldosterone in BK-Mediated K Excretion

    PubMed Central

    Cornelius, Ryan J.; Wen, Donghai; Li, Huaqing; Yuan, Yang; Wang-France, Jun; Warner, Paige C.; Sansom, Steven C.

    2015-01-01

    A low Na, high K diet (LNaHK) is associated with a low rate of cardiovascular (CV) disease in many societies. Part of the benefit of LNaHK relies on its diuretic effects; however, the role of aldosterone (aldo) in the diuresis is not understood. LNaHK mice exhibit an increase in renal K secretion that is dependent on the large, Ca-activated K channel, (BK-α with accessory BK-β4; BK-α/β4). We hypothesized that aldo causes an osmotic diuresis by increasing BK-α/β4-mediated K secretion in LNaHK mice. We found that the plasma aldo concentration (P[aldo]) was elevated by 10-fold in LNaHK mice compared with control diet (Con) mice. We subjected LNaHK mice to either sham surgery (sham), adrenalectomy (ADX) with low aldo replacement (ADX-LA), or ADX with high aldo replacement (ADX-HA). Compared to sham, the urinary flow, K excretion rate, transtubular K gradient (TTKG), and BK-α and BK-β4 expressions, were decreased in ADX-LA, but not different in ADX-HA. BK-β4 knockout (β4KO) and WT mice exhibited similar K clearance and TTKG in the ADX-LA groups; however, in sham and ADX-HA, the K clearance and TTKG of β4KO were less than WT. In response to amiloride treatment, the osmolar clearance was increased in WT Con, decreased in WT LNaHK, and unchanged in β4KO LNaHK. These data show that the high P[aldo] of LNaHK mice is necessary to generate a high rate of BK-α/β4-mediated K secretion, which creates an osmotic diuresis that may contribute to a reduction in CV disease. PMID:25607984

  2. Goosenest Volcano, southern Oregon: High K[sub 2]O, BA and Sr basaltic andesite extrusives

    SciTech Connect

    Mertzman, S.A. . Dept. of Geosciences)

    1992-01-01

    Goosenest Volcano, a cinder cone with coeval lava flows, is located nearly 5 miles WNW of the south entrance into Crater Lake National Park. A summit crater unmodified by glacial erosion but with a blanket of Mazama pumice, suggests the age of latest activity to be between 20,000 and 6850 B.P. The pyroclastics and lavas from Goosenest are augite olivine basaltic andesites, with a strong tendency for these minerals to form 2--5 mm in diameter glomeroporphyritic clumps [+-] plagioclase. Three samples from the cone (2 bombs and 1 spatter agglutinate) and five from lava flows were analyzed for major and trace elements through XRF and ICP techniques. These extrusive are calc-alkaline medium to high K[sub 2]O basaltic andesites; in particular, SiO[sub 2] ranges from 53 to 54 wt. %, K[sub 2]O from 1.39 to 1.94, MgO from 6.3 to 7.3, Ba from 774 to 1,069 ppm and Sr from 1,463 to 1,951 ppm. With increasing K[sub 2]O: P[sub 2]O[sub 5], Ba, Be, Ce, La, Sr, and Zr increase in concentration while Ni, Cr, and Co decrease. All major elements are virtually constant or scatter randomly; Y,V,Sc, and Yb follow the same pattern. The lower Al[sub 2]O[sub 3] content (16 to 17 wt.%) precludes the addition of a large plagioclase component as an explanation of the high Sr content. Batch partial melting of a mineralogically homogeneous source that has been fluxed by variable amounts of an LILE-rich fluid phase whose ultimate origin is tied to the subduction process, is a likely scheme which explains the unusual chemical composition of the Gossenest extrusive rocks.

  3. Efficient Toffoli Gate in Circuit Quantum Electrodynamics

    NASA Astrophysics Data System (ADS)

    Reed, Matthew; Dicarlo, Leonardo; Sun, Luyan; Frunzio, Luigi; Schoelkopf, Robert

    2011-03-01

    The fidelity of quantum gates in circuit quantum electrodynamics is typically limited by qubit decoherence. As such, significant improvements can be realized by shortening gate duration. The three-qubit Toffoli gate, also called the controlled-controlled NOT, is an important operation in basic quantum error correction. We report a scheme for a Toffoli gate that exploits interactions with non-computational excited states of transmon qubits which can be executed faster than an equivalent construction using one- and two-qubit gates. The application of this gate to efficient measurement-free quantum error correction will be discussed. Research supported by NSF, NSA, and ARO.

  4. Glutamate-gated Chloride Channels*

    PubMed Central

    Wolstenholme, Adrian J.

    2012-01-01

    Glutamate-gated chloride channels (GluCls) are found only in protostome invertebrate phyla but are closely related to mammalian glycine receptors. They have a number of roles in these animals, controlling locomotion and feeding and mediating sensory inputs into behavior. In nematodes and arthropods, they are targeted by the macrocyclic lactone family of anthelmintics and pesticides, making the GluCls of considerable medical and economic importance. Recently, the three-dimensional structure of a GluCl was solved, the first for any eukaryotic ligand-gated anion channel, revealing a macrocyclic lactone-binding site between the channel domains of adjacent subunits. This minireview will highlight some unique features of the GluCls and illustrate their contribution to our knowledge of the entire Cys loop ligand-gated ion channel superfamily. PMID:23038250

  5. Quantum gates by periodic driving

    PubMed Central

    Shi, Z. C.; Wang, W.; Yi, X. X.

    2016-01-01

    Topological quantum computation has been extensively studied in the past decades due to its robustness against decoherence. One way to realize the topological quantum computation is by adiabatic evolutions—it requires relatively long time to complete a gate, so the speed of quantum computation slows down. In this work, we present a method to realize single qubit quantum gates by periodic driving. Compared to adiabatic evolution, the single qubit gates can be realized at a fixed time much shorter than that by adiabatic evolution. The driving fields can be sinusoidal or square-well field. With the sinusoidal driving field, we derive an expression for the total operation time in the high-frequency limit, and an exact analytical expression for the evolution operator without any approximations is given for the square well driving. This study suggests that the period driving could provide us with a new direction in regulations of the operation time in topological quantum computation. PMID:26911900

  6. Reading Gate Positions with a Smartphone

    NASA Astrophysics Data System (ADS)

    van Overloop, Peter-Jules; Hut, Rolf

    2015-04-01

    Worldwide many flow gates are built in water networks in order to direct water to appropriate locations. Most of these gates are adjusted manually by field operators of water management organizations and it is often centrally not known what the new position of the gate is. This makes centralized management of the entire water network difficult. One of the reasons why the measurement of the gate position is usually not executed, is that for certain gates it is not easy to do such a reading. Tilting weirs or radial gates are examples where operators need special equipment (measuring rod and long level) to determine the position and it could even be a risky procedure. Another issue is that once the measurement is done, the value is jotted down in a notebook and later, at the office, entered in a computer system. So the entire monitoring procedure is not real-time and prone to human errors. A new way of monitoring gate positions is introduced. It consists of a level that is attached to the gate and an app with which a picture can be taken from the level. Using dedicated pattern recognition algorithms, the gate position can be read by using the angle of the level versus reference points on the gate, the radius of that gate and the absolute level of the joint around which the gate turn. The method uses gps-localization of the smartphone to store the gate position in the right location in the central database.

  7. Localizing a gate in CFTR.

    PubMed

    Gao, Xiaolong; Hwang, Tzyh-Chang

    2015-02-24

    Experimental and computational studies have painted a picture of the chloride permeation pathway in cystic fibrosis transmembrane conductance regulator (CFTR) as a short narrow tunnel flanked by wider inner and outer vestibules. Although these studies also identified a number of transmembrane segments (TMs) as pore-lining, the exact location of CFTR's gate(s) remains unknown. Here, using a channel-permeant probe, [Au(CN)2](-), we provide evidence that CFTR bears a gate that coincides with the predicted narrow section of the pore defined as residues 338-341 in TM6. Specifically, cysteines introduced cytoplasmic to the narrow region (i.e., positions 344 in TM6 and 1148 in TM12) can be modified by intracellular [Au(CN)2](-) in both open and closed states, corroborating the conclusion that the internal vestibule does not harbor a gate. However, cysteines engineered to positions external to the presumed narrow region (e.g., 334, 335, and 337 in TM6) are all nonreactive toward cytoplasmic [Au(CN)2](-) in the absence of ATP, whereas they can be better accessed by extracellular [Au(CN)2](-) when the open probability is markedly reduced by introducing a second mutation, G1349D. As [Au(CN)2](-) and chloride ions share the same permeation pathway, these results imply a gate is situated between amino acid residues 337 and 344 along TM6, encompassing the very segment that may also serve as the selectivity filter for CFTR. The unique position of a gate in the middle of the ion translocation pathway diverges from those seen in ATP-binding cassette (ABC) transporters and thus distinguishes CFTR from other members of the ABC transporter family. PMID:25675504

  8. Localizing a gate in CFTR

    PubMed Central

    Gao, Xiaolong; Hwang, Tzyh-Chang

    2015-01-01

    Experimental and computational studies have painted a picture of the chloride permeation pathway in cystic fibrosis transmembrane conductance regulator (CFTR) as a short narrow tunnel flanked by wider inner and outer vestibules. Although these studies also identified a number of transmembrane segments (TMs) as pore-lining, the exact location of CFTR’s gate(s) remains unknown. Here, using a channel-permeant probe, [Au(CN)2]−, we provide evidence that CFTR bears a gate that coincides with the predicted narrow section of the pore defined as residues 338–341 in TM6. Specifically, cysteines introduced cytoplasmic to the narrow region (i.e., positions 344 in TM6 and 1148 in TM12) can be modified by intracellular [Au(CN)2]− in both open and closed states, corroborating the conclusion that the internal vestibule does not harbor a gate. However, cysteines engineered to positions external to the presumed narrow region (e.g., 334, 335, and 337 in TM6) are all nonreactive toward cytoplasmic [Au(CN)2]− in the absence of ATP, whereas they can be better accessed by extracellular [Au(CN)2]− when the open probability is markedly reduced by introducing a second mutation, G1349D. As [Au(CN)2]− and chloride ions share the same permeation pathway, these results imply a gate is situated between amino acid residues 337 and 344 along TM6, encompassing the very segment that may also serve as the selectivity filter for CFTR. The unique position of a gate in the middle of the ion translocation pathway diverges from those seen in ATP-binding cassette (ABC) transporters and thus distinguishes CFTR from other members of the ABC transporter family. PMID:25675504

  9. Dual gated nuclear cardiac images

    SciTech Connect

    Zubal, I.G.; Bennett, G.W.; Bizais, Y.; Brill, A.B.

    1984-02-01

    A data acquisition system has been developed to collect camera events simultaneously with continually digitized electrocardiograph signals and respiratory flow measurements. Software processing of the list mode data creates more precisely gated cardiac frames. Additionally, motion blur due to heart movement during breathing is reduced by selecting events within a specific respiratory phase. Thallium myocardium images of a healthy volunteer show increased definition. This technique of combined cardiac and respiratory gating has the potential of improving the detectability of small lesions, and the characterization of cardiac wall motion.

  10. Biophysics of BK Channel Gating.

    PubMed

    Pantazis, A; Olcese, R

    2016-01-01

    BK channels are universal regulators of cell excitability, given their exceptional unitary conductance selective for K(+), joint activation mechanism by membrane depolarization and intracellular [Ca(2+)] elevation, and broad expression pattern. In this chapter, we discuss the structural basis and operational principles of their activation, or gating, by membrane potential and calcium. We also discuss how the two activation mechanisms interact to culminate in channel opening. As members of the voltage-gated potassium channel superfamily, BK channels are discussed in the context of archetypal family members, in terms of similarities that help us understand their function, but also seminal structural and biophysical differences that confer unique functional properties. PMID:27238260

  11. HELLS GATE ROADLESS AREA, ARIZONA.

    USGS Publications Warehouse

    Conway, Clay M.; McColly, Robert A.

    1984-01-01

    Although no mineral-resource potential was identified in the Hells Gate Roadless Area during mineral surveys, the area is largely underlain by a regionally extensive Proterozoic granite-rhyolite complex which is tin-bearing. The geologic setting precludes the occurrence of fossil fuel resources and no other energy resources were identified. The potential for tin and associated metals in the Hells Gate Roadless Area and the region cannot be fully evaluated at this point. The granophyre and the upper part of the granite pluton along the northwestern margin of the area should be explored.

  12. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure

    PubMed Central

    Khan, Z. N.; Ahmed, S.; Ali, M.

    2016-01-01

    Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device’s output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application. PMID:27571412

  13. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.

    PubMed

    Khan, Z N; Ahmed, S; Ali, M

    2016-01-01

    Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device's output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application. PMID:27571412

  14. Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks

    NASA Astrophysics Data System (ADS)

    Vais, Abhitosh; Franco, Jacopo; Lin, Han-Chung; Collaert, Nadine; Mocuta, Anda; De Meyer, Kristin; Thean, Aaron

    2015-11-01

    In this work, we discuss how the position of the flat band voltage with respect to the starting voltage of the C-V measurement sweep can influence the estimation of the hysteresis in high-k/InGaAs MOS devices. We show that, with the support of experimental data and conceptual oxide defect band calculations, the interpretation and subsequent parameter extraction from flat-band voltage shifts observed in III-V MOS devices is more complex as compared to Si gate stacks. It is demonstrated that such complication arises due to the wider distribution of defect levels in the dielectric band gap in the case of InGaAs/high-k stack as compared to standard Si/SiO2/HfO2 MOS. In particular, for Al2O3 deposited on InGaAs, two wide, partially overlapping oxide defect bands are identified, centered ˜1.5 eV and ˜0.5 eV above and below the channel conduction band, respectively. Such defect levels are expected to affect the device operation and reliability.

  15. Dynamic gating window for compensation of baseline shift in respiratory-gated radiation therapy

    SciTech Connect

    Pepin, Eric W.; Wu Huanmei; Shirato, Hiroki

    2011-04-15

    Purpose: To analyze and evaluate the necessity and use of dynamic gating techniques for compensation of baseline shift during respiratory-gated radiation therapy of lung tumors. Methods: Motion tracking data from 30 lung tumors over 592 treatment fractions were analyzed for baseline shift. The finite state model (FSM) was used to identify the end-of-exhale (EOE) breathing phase throughout each treatment fraction. Using duty cycle as an evaluation metric, several methods of end-of-exhale dynamic gating were compared: An a posteriori ideal gating window, a predictive trend-line-based gating window, and a predictive weighted point-based gating window. These methods were evaluated for each of several gating window types: Superior/inferior (SI) gating, anterior/posterior beam, lateral beam, and 3D gating. Results: In the absence of dynamic gating techniques, SI gating gave a 39.6% duty cycle. The ideal SI gating window yielded a 41.5% duty cycle. The weight-based method of dynamic SI gating yielded a duty cycle of 36.2%. The trend-line-based method yielded a duty cycle of 34.0%. Conclusions: Dynamic gating was not broadly beneficial due to a breakdown of the FSM's ability to identify the EOE phase. When the EOE phase was well defined, dynamic gating showed an improvement over static-window gating.

  16. Positive and negative dipole layer formation at high-k/SiO2 interfaces simulated by classical molecular dynamics

    NASA Astrophysics Data System (ADS)

    Shimura, Kosuke; Kunugi, Ryota; Ogura, Atsushi; Satoh, Shinichi; Fei, Jiayang; Kita, Koji; Watanabe, Takanobu

    2016-04-01

    We show the electric dipole layer formed at a high-k/SiO2 interface can be explained by the imbalance between the migration of oxygen ions and metal cations across the high-k/SiO2 interface. Classical molecular dynamics (MD) simulations are performed for Al2O3/SiO2, MgO/SiO2, and SrO/SiO2 interfaces. The simulations qualitatively reproduce the experimentally observed flatband voltage (V FB) shifts of these systems. In the case of the Al2O3/SiO2 interface, a dipole layer is formed by the migration of oxygen ions from the Al2O3 side to the SiO2 side. By way of contrast, opposite dipole moments appear at the MgO/SiO2 and SrO/SiO2 interfaces, because of a preferential migration of metal cations from the high-k oxide toward the SiO2 layer in the course of the formation of a stable silicate phase. These results indicate that the migrations of both oxygen ions and metal cations are responsible for the formation of the dipole layer in high-k/SiO2 interfaces.

  17. Double-disc gate valve

    DOEpatents

    Wheatley, Seth J.

    1979-01-01

    This invention relates to an improvement in a conventional double-disc gate valve having a vertically movable gate assembly including a wedge, spreaders slidably engaged therewtih, a valve disc carried by the spreaders. When the gate assembly is lowered to a selected point in the valve casing, the valve discs are moved transversely outward to close inlet and outlet ports in the casing. The valve includes hold-down means for guiding the disc-and-spreader assemblies as they are moved transversely outward and inward. If such valves are operated at relatively high differential pressures, they sometimes jam during opening. Such jamming has been a problem for many years in gate valves used in gaseous diffusion plants for the separtion of uranium isotopes. The invention is based on the finding that the above-mentioned jamming results when the outlet disc tilts about its horizontal axis in a certain way during opening of the valve. In accordance with the invention, tilting of the outlet disc is maintained at a tolerable value by providing the disc with a rigid downwardly extending member and by providing the casing with a stop for limiting inward arcuate movement of the member to a preselected value during opening of the valve.

  18. Talking with Microsoft's Bill Gates.

    ERIC Educational Resources Information Center

    EDUCOM Review, 1994

    1994-01-01

    Presents the transcript of an interview with William Gates, chairman of Microsoft Corporation. Topics discussed include continued support from the information technology industry for higher education; experiences with recent college graduates in the industry; new technologies developing in the near future; alliances in the computer industry; and…

  19. High-Frequency Gated Oscillator

    NASA Technical Reports Server (NTRS)

    Berard, C. A.

    1982-01-01

    New gated oscillator generates bursts of high-frequency sine waves, square waves, and triangular waves in response to control signals. Each burst starts at zero phase, with tight tolerances on signal amplitude and frequency. Frequencies in megahertz range are made possible by using high-speed comparators and high-speed flip-flop as fast-response threshold detector.

  20. Developing ICALL Tools Using GATE

    ERIC Educational Resources Information Center

    Wood, Peter

    2008-01-01

    This article discusses the use of the General Architecture for Text Engineering (GATE) as a tool for the development of ICALL and NLP applications. It outlines a paradigm shift in software development, which is mainly influenced by projects such as the Free Software Foundation. It looks at standards that have been proposed to facilitate the…

  1. Resonant gate driver with efficient gate energy recovery and switching loss reduction

    NASA Astrophysics Data System (ADS)

    Kim, I.-G.; Kwak, S.-S.

    2016-04-01

    This article describes a novel resonant gate driver for charging the gate capacitor of power metal-oxide semiconductor field-effect-transistors (MOSFETs) that operate at a high switching frequency in power converters. The proposed resonant gate driver is designed with three small MOSFETs to build up the inductor current in addition to an inductor for temporary energy storage. The proposed resonant gate driver recovers the CV2 gate loss, which is the largest loss dissipated in the gate resistance in conventional gate drivers. In addition, the switching loss is reduced at the instants of turn on and turn off in the power MOSFETs of power converters by using the proposed gate driver. Mathematical analyses of the total loss appearing in the gate driver circuit and the switching loss reduction in the power switch of power converters are discussed. Finally, the proposed resonant gate driver is verified with experimental results at a switching frequency of 1 MHz.

  2. Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

    SciTech Connect

    Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K.

    2014-02-24

    We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

  3. Reduced carbonic fluid and possible nature of high K magmas of Kamchatka.

    NASA Astrophysics Data System (ADS)

    Simakin, Alexander; Zelensky, Michael; Salova, Tamara

    2014-05-01

    High potassium magmatism in Kamchatka is usually interpreted as reflection of the small degree mantle melting in back arc environment. Strong eruption of Tolbachik volcano located in typical subduction magmatism setting and lasted for several months in 2012-2013 argues against such interpretation. Erupted basaltic magmas contain up to 2.5-3.5 wt.% of K2O. They bear all attributes of high-K magmas such as high Ba (600 ppm) and Zr (250 ppm) contents [Volynets et al., 2013]. Moreover recent [Ponamareva et al., 2013] estimates of the volume of the compositionally similar early Holocene pyroclastics from located nearby Plosky volcano give significant value of ca 10 km3. Syneruptive probing of the fluid on Tolbachik [Zelensky, in preparation] yields high CO2 and SO2content and reveals micro-inclusions of elemental carbon and native alloys of Ni-Fe, Pt and Pt-Ag. These observations stay for the intrinsic reduced carbon-bearing nature of this fluid. We suggest that nature of the fluid plays decisive role in the potassium magma specialization. New experimental data on the melting with reduced carbon bearing fluid supports this suggestion. Experiments have been performed in IHPV at P=2-5 kbar and T=900-1000oC. Initial content of CO in the dry CO2-CO mixture was about 14 wt.%, maximum final water content of H2O in the final fluid was about 13 wt.%. At dehydration melting through CO2-CO fluid transport of the spilitized basaltic andesite we get melt with up to 330 ppm of ZrO2 and 9 wt.% of K2O (source rock contains only 1 wt.% K2O). With oxidized carbonic fluid normal sodium bearing melt was produced. Carbon enrichment of the mantle fluid can be explained as follows. Current geodynamic regime and volcanism in Kamchatka are affected by geologically recent accretion of Kronotsky paleoarc approximately 5 Myrs ago (northern part). In the new geodynamic model [Simakin, 2013] at the certain rheologic parameters accreted terrains are overstepped by subduction zone with temporary

  4. Environmental noise reduction for holonomic quantum gates

    SciTech Connect

    Parodi, Daniele; Zanghi, Nino; Sassetti, Maura; Solinas, Paolo

    2007-07-15

    We study the performance of holonomic quantum gates, driven by lasers, under the effect of a dissipative environment modeled as a thermal bath of oscillators. We show how to enhance the performance of the gates by a suitable choice of the loop in the manifold of the controllable parameters of the laser. For a simplified, albeit realistic model, we find the surprising result that for a long time evolution the performance of the gate (properly estimated in terms of average fidelity) increases. On the basis of this result, we compare holonomic gates with the so-called stimulated raman adiabatic passage (STIRAP) gates.

  5. A gating mechanism of pentameric ligand-gated ion channels

    PubMed Central

    Calimet, Nicolas; Simoes, Manuel; Changeux, Jean-Pierre; Karplus, Martin; Taly, Antoine; Cecchini, Marco

    2013-01-01

    Pentameric ligand-gated ion channels (pLGICs) play a central role in intercellular communication in the nervous system and are involved in fundamental processes such as attention, learning, and memory. They are oligomeric protein assemblies that convert a chemical signal into an ion flux through the postsynaptic membrane, but the molecular mechanism of gating ions has remained elusive. Here, we present atomistic molecular dynamics simulations of the prokaryotic channels from Gloeobacter violaceus (GLIC) and Erwinia chrysanthemi (ELIC), whose crystal structures are thought to represent the active and the resting states of pLGICs, respectively, and of the eukaryotic glutamate-gated chloride channel from Caenorhabditis elegans (GluCl), whose open-channel structure was determined complexed with the positive allosteric modulator ivermectin. Structural observables extracted from the trajectories of GLIC and ELIC are used as progress variables to analyze the time evolution of GluCl, which was simulated in the absence of ivermectin starting from the structure with bound ivermectin. The trajectory of GluCl with ivermectin removed shows a sequence of structural events that couple agonist unbinding from the extracellular domain to ion-pore closing in the transmembrane domain. Based on these results, we propose a structural mechanism for the allosteric communication leading to deactivation/activation of the GluCl channel. This model of gating emphasizes the coupling between the quaternary twisting and the opening/closing of the ion pore and is likely to apply to other members of the pLGIC family. PMID:24043807

  6. Voltage-Gated Hydrophobic Nanopores

    SciTech Connect

    Lavrik, Nickolay V

    2011-01-01

    Hydrophobicity is a fundamental property that is responsible for numerous physical and biophysical aspects of molecular interactions in water. Peculiar behavior is expected for water in the vicinity of hydrophobic structures, such as nanopores. Indeed, hydrophobic nanopores can be found in two distinct states, dry and wet, even though the latter is thermodynamically unstable. Transitions between these two states are kinetically hindered in long pores but can be much faster in shorter pores. As it is demonstrated for the first time in this paper, these transitions can be induced by applying a voltage across a membrane with a single hydrophobic nanopore. Such voltage-induced gating in single nanopores can be realized in a reversible manner through electrowetting of inner walls of the nanopores. The resulting I-V curves of such artificial hydrophobic nanopores mimic biological voltage-gated channels.

  7. Microscale Digital Vacuum Electronic Gates

    NASA Technical Reports Server (NTRS)

    Manohara, Harish (Inventor); Mojarradi, Mohammed M. (Inventor)

    2014-01-01

    Systems and methods in accordance with embodiments of the invention implement microscale digital vacuum electronic gates. In one embodiment, a microscale digital vacuum electronic gate includes: a microscale field emitter that can emit electrons and that is a microscale cathode; and a microscale anode; where the microscale field emitter and the microscale anode are disposed within at least a partial vacuum; where the microscale field emitter and the microscale anode are separated by a gap; and where the potential difference between the microscale field emitter and the microscale anode is controllable such that the flow of electrons between the microscale field emitter and the microscale anode is thereby controllable; where when the microscale anode receives a flow of electrons, a first logic state is defined; and where when the microscale anode does not receive a flow of electrons, a second logic state is defined.

  8. Engineering the propagation of high-k bulk plasmonic waves in multilayer hyperbolic metamaterials by multiscale structuring

    NASA Astrophysics Data System (ADS)

    Zhukovsky, Sergei V.; Lavrinenko, Andrei V.; Sipe, J. E.

    2013-10-01

    Propagation of large-wavevector bulk plasmonic waves in multilayer hyperbolic metamaterials (HMMs) with two levels of structuring is theoretically studied. It is shown that when the parameters of a subwavelength metal-dielectric multilayer ("substructure") are modulated ("superstructured") on a larger, wavelength scale, the propagation of bulk plasmon polaritons in the resulting multiscale HMM is subject to photonic band gap phenomena. A great degree of control over such plasmons can be exerted by varying the superstructure geometry. As an example, Bragg reflection and Fabry-Perot resonances are demonstrated in multiscale HMMs with periodic superstructures. More complicated, aperiodically ordered superstructures are also considered, with fractal Cantor-like multiscale HMMs exhibiting characteristic self-similar spectral signatures in the high-k band. The multiscale HMM concept is shown to be a promising platform for using high-k bulk plasmonic waves as a new kind of information carriers, which can be used in far-field subwavelength imaging and plasmonic communication.

  9. Gated high speed optical detector

    NASA Technical Reports Server (NTRS)

    Green, S. I.; Carson, L. M.; Neal, G. W.

    1973-01-01

    The design, fabrication, and test of two gated, high speed optical detectors for use in high speed digital laser communication links are discussed. The optical detectors used a dynamic crossed field photomultiplier and electronics including dc bias and RF drive circuits, automatic remote synchronization circuits, automatic gain control circuits, and threshold detection circuits. The equipment is used to detect binary encoded signals from a mode locked neodynium laser.

  10. Voltage-gated Proton Channels

    PubMed Central

    DeCoursey, Thomas E.

    2014-01-01

    Voltage-gated proton channels, HV1, have vaulted from the realm of the esoteric into the forefront of a central question facing ion channel biophysicists, namely the mechanism by which voltage-dependent gating occurs. This transformation is the result of several factors. Identification of the gene in 2006 revealed that proton channels are homologues of the voltage-sensing domain of most other voltage-gated ion channels. Unique, or at least eccentric, properties of proton channels include dimeric architecture with dual conduction pathways, perfect proton selectivity, a single-channel conductance ~103 smaller than most ion channels, voltage-dependent gating that is strongly modulated by the pH gradient, ΔpH, and potent inhibition by Zn2+ (in many species) but an absence of other potent inhibitors. The recent identification of HV1 in three unicellular marine plankton species has dramatically expanded the phylogenetic family tree. Interest in proton channels in their own right has increased as important physiological roles have been identified in many cells. Proton channels trigger the bioluminescent flash of dinoflagellates, facilitate calcification by coccolithophores, regulate pH-dependent processes in eggs and sperm during fertilization, secrete acid to control the pH of airway fluids, facilitate histamine secretion by basophils, and play a signaling role in facilitating B-cell receptor mediated responses in B lymphocytes. The most elaborate and best-established functions occur in phagocytes, where proton channels optimize the activity of NADPH oxidase, an important producer of reactive oxygen species. Proton efflux mediated by HV1 balances the charge translocated across the membrane by electrons through NADPH oxidase, minimizes changes in cytoplasmic and phagosomal pH, limits osmotic swelling of the phagosome, and provides substrate H+ for the production of H2O2 and HOCl, reactive oxygen species crucial to killing pathogens. PMID:23798303

  11. Atom-ion quantum gate

    SciTech Connect

    Doerk, Hauke; Idziaszek, Zbigniew; Calarco, Tommaso

    2010-01-15

    Ultracold collisions of ions with neutral atoms in traps are studied. Recently, ultracold atom-ion systems have become available in experimental setups, where their quantum states can be coherently controlled. This control allows for an implementation of quantum information processing, combining the advantages of charged and neutral particles. The state-dependent dynamics that is a necessary ingredient for quantum computation schemes is provided in this case by the short-range interaction forces that depend on the hyperfine states of both particles. In this work, a theoretical description of spin-state-dependent trapped atom-ion collisions is developed in the framework of a multichannel quantum-defect theory and an effective single-channel model is formulated that reduces the complexity of the problem. Based on this description, a two-qubit phase gate between a {sup 135}Ba{sup +} ion and a {sup 87}Rb atom is simulated using a realistic combination of the singlet and triplet scattering lengths. The gate process is optimized and accelerated with the help of optimal control techniques. The result is a gate fidelity of 1-10{sup -3} within 350 mus.

  12. Modes of glutamate receptor gating

    PubMed Central

    Popescu, Gabriela K

    2012-01-01

    Abstract The time course of excitatory synaptic currents, the major means of fast communication between neurons of the central nervous system, is encoded in the dynamic behaviour of post-synaptic glutamate-activated channels. First-pass attempts to explain the glutamate-elicited currents with mathematical models produced reaction mechanisms that included only the most basic functionally defined states: resting vs. liganded, closed vs. open, responsive vs. desensitized. In contrast, single-molecule observations afforded by the patch-clamp technique revealed an unanticipated kinetic multiplicity of transitions: from microseconds-lasting flickers to minutes-long modes. How these kinetically defined events impact the shape of the synaptic response, how they relate to rearrangements in receptor structure, and whether and how they are physiologically controlled represent currently active research directions. Modal gating, which refers to the slowest, least frequently observed ion-channel transitions, has been demonstrated for representatives of all ion channel families. However, reaction schemes have been largely confined to the short- and medium-range time scales. For glutamate receptors as well, modal gating has only recently come under rigorous scrutiny. This article reviews the evidence for modal gating of glutamate receptors and the still developing hypotheses about the mechanism(s) by which modal shifts occur and the ways in which they may impact the time course of synaptic transmission. PMID:22106181

  13. Dipole correlation effects on the local field and the effective dielectric constant in composite dielectrics containing high-k inclusions.

    PubMed

    Allahyarov, Elshad; Löwen, Hartmut; Zhu, Lei

    2016-07-28

    Mixing dielectric polymers with high permittivity (high-k) inclusions can affect their electrical properties. In actuation applications of dielectric elastomers, the polarized inclusions generate additional volume polarization-related electrostriction. In energy storage applications, it is possible to store more energy in dielectric composites because of additional polarization of the inclusions and interfaces. However, mixing an electroactive polymer with high-k inclusions also brings several disadvantages. The expulsion of the field from the interior of high-k fillers and the presence of two poles on the filler surface along the applied field direction result in higher local fields EL near the inclusion poles. The resulting field enhancement lowers the breakdown field (Eb) threshold for the material and therefore compromises the actuation and energy storage capabilities of dielectric composites. To mitigate this issue, the dependence of EL on the morphology of inclusion distribution, the field localization effect in chained configurations, and the role of the dipole-dipole correlation effects in the enhancement of the dipolar field of inclusions are analyzed. We show that the dipolar correlation effects are strong in large inclusion composites and their contribution to the inclusion dipole moment μ and to the local fields EL can reach 30-50%. A new method for deriving the composite permittivity from the field EL distribution, based on a caged probe technique, is also presented. PMID:27357433

  14. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    SciTech Connect

    Ruppalt, Laura B. Cleveland, Erin R.; Champlain, James G.; Bennett, Brian R.; Prokes, Sharka M.

    2014-12-15

    In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD) high-k dielectric stacks with device-quality p-type GaSb(001) epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H{sub 2}/Ar plasma treatment and subsequently removed to air. High-k HfO{sub 2} and Al{sub 2}O{sub 3}/HfO{sub 2} bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS) capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H{sub 2}-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H{sub 2}-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  15. Alkanols inhibit voltage-gated K+ channels via a distinct gating modifying mechanism that prevents gate opening

    PubMed Central

    Martínez-Morales, Evelyn; Kopljar, Ivan; Snyders, Dirk J.; Labro, Alain J.

    2015-01-01

    Alkanols are small aliphatic compounds that inhibit voltage-gated K+ (Kv) channels through a yet unresolved gating mechanism. Kv channels detect changes in the membrane potential with their voltage-sensing domains (VSDs) that reorient and generate a transient gating current. Both 1-Butanol (1-BuOH) and 1-Hexanol (1-HeOH) inhibited the ionic currents of the Shaker Kv channel in a concentration dependent manner with an IC50 value of approximately 50 mM and 3 mM, respectively. Using the non-conducting Shaker-W434F mutant, we found that both alkanols immobilized approximately 10% of the gating charge and accelerated the deactivating gating currents simultaneously with ionic current inhibition. Thus, alkanols prevent the final VSD movement(s) that is associated with channel gate opening. Applying 1-BuOH and 1-HeOH to the Shaker-P475A mutant, in which the final gating transition is isolated from earlier VSD movements, strengthened that neither alkanol affected the early VSD movements. Drug competition experiments showed that alkanols do not share the binding site of 4-aminopyridine, a drug that exerts a similar effect at the gating current level. Thus, alkanols inhibit Shaker-type Kv channels via a unique gating modifying mechanism that stabilizes the channel in its non-conducting activated state. PMID:26616025

  16. Contact gating at GHz frequency in graphene

    PubMed Central

    Wilmart, Q.; Inhofer, A.; Boukhicha, M.; Yang, W.; Rosticher, M.; Morfin, P.; Garroum, N.; Fève, G.; Berroir, J.-M.; Plaçais, B.

    2016-01-01

    The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates underneath the contact region which allow a full control of the Klein barrier taking place at the contact edge. In particular, our work demonstrates the GHz operation of transistors driven by independent contact gates. We benchmark the standard channel and novel contact gating and report for the later dynamical transconductance levels at the state of the art. Our finding may find applications in electronics and optoelectronics whenever there is need to control independently the Fermi level and the electrostatic potential of electronic sources or to get rid of cumbersome local channel gates. PMID:26879709

  17. Cognitive mechanisms associated with auditory sensory gating.

    PubMed

    Jones, L A; Hills, P J; Dick, K M; Jones, S P; Bright, P

    2016-02-01

    Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants additionally completed a paired-stimulus paradigm as a measure of auditory sensory gating. A correlational analysis revealed that several tasks correlated significantly with sensory gating. However once fluid intelligence and working memory were accounted for, only a measure of latent inhibition and accuracy scores on the continuous performance task showed significant sensitivity to sensory gating. We conclude that sensory gating reflects the identification of goal-irrelevant information at the encoding (input) stage and the subsequent ability to selectively attend to goal-relevant information based on that previous identification. PMID:26716891

  18. Quantum gates with controlled adiabatic evolutions

    NASA Astrophysics Data System (ADS)

    Hen, Itay

    2015-02-01

    We introduce a class of quantum adiabatic evolutions that we claim may be interpreted as the equivalents of the unitary gates of the quantum gate model. We argue that these gates form a universal set and may therefore be used as building blocks in the construction of arbitrary "adiabatic circuits," analogously to the manner in which gates are used in the circuit model. One implication of the above construction is that arbitrary classical boolean circuits as well as gate model circuits may be directly translated to adiabatic algorithms with no additional resources or complexities. We show that while these adiabatic algorithms fail to exhibit certain aspects of the inherent fault tolerance of traditional quantum adiabatic algorithms, they may have certain other experimental advantages acting as quantum gates.

  19. Cognitive mechanisms associated with auditory sensory gating

    PubMed Central

    Jones, L.A.; Hills, P.J.; Dick, K.M.; Jones, S.P.; Bright, P.

    2016-01-01

    Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants additionally completed a paired-stimulus paradigm as a measure of auditory sensory gating. A correlational analysis revealed that several tasks correlated significantly with sensory gating. However once fluid intelligence and working memory were accounted for, only a measure of latent inhibition and accuracy scores on the continuous performance task showed significant sensitivity to sensory gating. We conclude that sensory gating reflects the identification of goal-irrelevant information at the encoding (input) stage and the subsequent ability to selectively attend to goal-relevant information based on that previous identification. PMID:26716891

  20. Reversible logic gate using adiabatic superconducting devices

    PubMed Central

    Takeuchi, N.; Yamanashi, Y.; Yoshikawa, N.

    2014-01-01

    Reversible computing has been studied since Rolf Landauer advanced the argument that has come to be known as Landauer's principle. This principle states that there is no minimum energy dissipation for logic operations in reversible computing, because it is not accompanied by reductions in information entropy. However, until now, no practical reversible logic gates have been demonstrated. One of the problems is that reversible logic gates must be built by using extremely energy-efficient logic devices. Another difficulty is that reversible logic gates must be both logically and physically reversible. Here we propose the first practical reversible logic gate using adiabatic superconducting devices and experimentally demonstrate the logical and physical reversibility of the gate. Additionally, we estimate the energy dissipation of the gate, and discuss the minimum energy dissipation required for reversible logic operations. It is expected that the results of this study will enable reversible computing to move from the theoretical stage into practical usage. PMID:25220698

  1. Experimental superposition of orders of quantum gates.

    PubMed

    Procopio, Lorenzo M; Moqanaki, Amir; Araújo, Mateus; Costa, Fabio; Alonso Calafell, Irati; Dowd, Emma G; Hamel, Deny R; Rozema, Lee A; Brukner, Časlav; Walther, Philip

    2015-01-01

    Quantum computers achieve a speed-up by placing quantum bits (qubits) in superpositions of different states. However, it has recently been appreciated that quantum mechanics also allows one to 'superimpose different operations'. Furthermore, it has been shown that using a qubit to coherently control the gate order allows one to accomplish a task--determining if two gates commute or anti-commute--with fewer gate uses than any known quantum algorithm. Here we experimentally demonstrate this advantage, in a photonic context, using a second qubit to control the order in which two gates are applied to a first qubit. We create the required superposition of gate orders by using additional degrees of freedom of the photons encoding our qubits. The new resource we exploit can be interpreted as a superposition of causal orders, and could allow quantum algorithms to be implemented with an efficiency unlikely to be achieved on a fixed-gate-order quantum computer. PMID:26250107

  2. Contact gating at GHz frequency in graphene.

    PubMed

    Wilmart, Q; Inhofer, A; Boukhicha, M; Yang, W; Rosticher, M; Morfin, P; Garroum, N; Fève, G; Berroir, J-M; Plaçais, B

    2016-01-01

    The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates underneath the contact region which allow a full control of the Klein barrier taking place at the contact edge. In particular, our work demonstrates the GHz operation of transistors driven by independent contact gates. We benchmark the standard channel and novel contact gating and report for the later dynamical transconductance levels at the state of the art. Our finding may find applications in electronics and optoelectronics whenever there is need to control independently the Fermi level and the electrostatic potential of electronic sources or to get rid of cumbersome local channel gates. PMID:26879709

  3. Contact gating at GHz frequency in graphene

    NASA Astrophysics Data System (ADS)

    Wilmart, Q.; Inhofer, A.; Boukhicha, M.; Yang, W.; Rosticher, M.; Morfin, P.; Garroum, N.; Fève, G.; Berroir, J.-M.; Plaçais, B.

    2016-02-01

    The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates underneath the contact region which allow a full control of the Klein barrier taking place at the contact edge. In particular, our work demonstrates the GHz operation of transistors driven by independent contact gates. We benchmark the standard channel and novel contact gating and report for the later dynamical transconductance levels at the state of the art. Our finding may find applications in electronics and optoelectronics whenever there is need to control independently the Fermi level and the electrostatic potential of electronic sources or to get rid of cumbersome local channel gates.

  4. Four Great Gates: Dilemmas, Directions and Distractions in Educational Research

    ERIC Educational Resources Information Center

    Delamont, Sara

    2005-01-01

    In James Elroy Flecker's poem "The Gates of Damascus", the poet imagines four exits from the safe comfortable city to the outside world. Each gate takes the traveller into a different set of temptations and dangers. The Aleppo Gate leads to trade and commerce, the Mecca Gate is for faith and pilgrimage, the Lebanon Gate is for exploration and the…

  5. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    PubMed

    Zhang, Liangliang; Guo, Yuzheng; Hassan, Vinayak Vishwanath; Tang, Kechao; Foad, Majeed A; Woicik, Joseph C; Pianetta, Piero; Robertson, John; McIntyre, Paul C

    2016-07-27

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit. PMID:27345195

  6. The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics

    PubMed Central

    2014-01-01

    When pushing the gate dielectric thickness of metal-oxide-semiconductor (MOS) devices down to the subnanometer scale, the most challenging issue is the interface. The interfacial transition layers between the high-k dielectric/Si and between the high-k dielectric/gate metal become the critical constraints for the smallest achievable film thickness. This work presents a detailed study on the interface bonding structures of the tungsten/lanthanum oxide/silicon (W/La2O3/Si) MOS structure. We found that both W/La2O3 and La2O3/Si are thermally unstable. Thermal annealing can lead to W oxidation and the forming of a complex oxide layer at the W/La2O3 interface. For the La2O3/Si interface, thermal annealing leads to a thick low-k silicate layer. These interface layers do not only cause significant device performance degradation, but also impose a limit on the thinnest equivalent oxide thickness (EOT) to be achievable which may be well above the requirements of our future technology nodes. PMID:25246873

  7. Gate engineered performance of single molecular transistor

    NASA Astrophysics Data System (ADS)

    Ray, S. J.

    2016-05-01

    The operation, performance and electrostatics of multigated Single Molecular Transistor (SMT) devices are investigated using first-principles based density functional theory calculations for planar (pentacene) and non-planar (sucrose) molecules as islands. It has been found that the incorporation of larger numbers of gates allows enhanced electrostatic control in the SMT operation which has been quantified from the energy calculations and estimation of the gate capacitances. The effect of multiple gates is more dominant for a non-planar molecule than a planar molecule within an SMT which indicates the usefulness of such multi-gate architectures for future nanoelectronic devices.

  8. Characterizing universal gate sets via dihedral benchmarking

    NASA Astrophysics Data System (ADS)

    Carignan-Dugas, Arnaud; Wallman, Joel J.; Emerson, Joseph

    2015-12-01

    We describe a practical experimental protocol for robustly characterizing the error rates of non-Clifford gates associated with dihedral groups, including small single-qubit rotations. Our dihedral benchmarking protocol is a generalization of randomized benchmarking that relaxes the usual unitary 2-design condition. Combining this protocol with existing randomized benchmarking schemes enables practical universal gate sets for quantum information processing to be characterized in a way that is robust against state-preparation and measurement errors. In particular, our protocol enables direct benchmarking of the π /8 gate even under the gate-dependent error model that is expected in leading approaches to fault-tolerant quantum computation.

  9. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

    PubMed

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  10. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

    PubMed Central

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  11. An investigation of the work function of metal gate electrodes for advanced CMOS applications

    NASA Astrophysics Data System (ADS)

    Wong, Gloria Man Ting

    Scaling the gate length and oxide thickness of the metal oxide semiconductor field effect transistor (MOSFET) offers great potential to improve device performance and circuit density. The use of metals for the gate electrode eliminates problems associated with conventional polycrystalline silicon, and shows better compatibility with high-k gate dielectrics. In order to optimize transistor performance, metals with appropriate work functions for both NMOS and PMOS must be identified and integrated into the conventional CMOS process flow. In this work, both single metal and two-component metal gate systems were investigated to develop a fundamental understanding of the factors that influence the metal gate electrode work function. The work function of tungsten was found to be higher in evaporated electrodes than in sputter-deposited films, which may be related to differences in roughness, density, grain size and as-grown oxygen content observed by physical characterization. In the two-component systems, metal gates were fabricated using a stacked bilayer structure. In previous work, it was found that the work function can be controlled by the thickness of the underlayer metal (the layer closest to the oxide). Depending on the amount of diffusion, the influence of the overlayer on the atomic concentration at the dielectric interface varies. Three two-component systems were investigated: Nb-W, Ti-W and Pt-Ti. By selecting materials systems that exhibit differences in diffusion and phase formation (as predicted by their phase diagrams), the change in work function due to underlayer thickness and composition for all three metal pairs is elucidated. The diffusion behavior in bilayer metal gates was investigated using x-ray reflectivity of multilayer films and was also modeled to quantify the differences between these three metal-metal systems. The effect of composition on the work function was directly probed by fabricating alloy metal gate electrodes by co-sputtering. A

  12. Voltage-Gated Calcium Channels

    NASA Astrophysics Data System (ADS)

    Zamponi, Gerald Werner

    Voltage Gated Calcium Channels is the first comprehensive book in the calcium channel field, encompassing over thirty years of progress towards our understanding of calcium channel structure, function, regulation, physiology, pharmacology, and genetics. This book balances contributions from many of the leading authorities in the calcium channel field with fresh perspectives from risings stars in the area, taking into account the most recent literature and concepts. This is the only all-encompassing calcium channel book currently available, and is an essential resource for academic researchers at all levels in the areas neuroscience, biophysics, and cardiovascular sciences, as well as to researchers in the drug discovery area.

  13. Surface potential due to charge accumulation during vacuum ultraviolet exposure for high-k and low-k dielectrics

    SciTech Connect

    Ren, H.; Sinha, H.; Sehgal, A.; Nichols, M. T.; Shohet, J. L.; Antonelli, G. A.; Nishi, Y.

    2010-08-16

    The surface potential due to charge accumulation during vacuum ultraviolet irradiation of high-k and low-k thin dielectric films is measured. Measurement of the substrate current, which is the sum of the charge-accumulation and photoinjection currents, allows an in situ monitoring of the charge accumulation during irradiation. The relationship between the substrate current and the calculated in situ surface potential is also found, eliminating the need for a separate surface-potential measurement. With a high photon dose, the surface potential and substrate current reach a steady-state value with no further net charge accumulation.

  14. Direct transitions from high-K isomers to low-K bands -- {gamma} softness or coriolis coupling

    SciTech Connect

    Shimizu, Yoshifumi R.; Narimatsu, Kanako; Ohtsubo, Shin-Ichi

    1996-12-31

    Recent measurements of direct transitions from high-K isomers to low-K bands reveal severe break-down of the K-selection rule and pose the problem of how to understand the mechanism of such K-violation. The authors recent systematic calculations by using a simple {gamma}-tunneling model reproduced many of the observed hindrances, indicating the importance of the {gamma} softness. However, there are some data which cannot be explained in terms of the {gamma}-degree of freedom. In this talk, the authors also discuss the results of conventional Coriolis coupling calculations, which is considered to be another important mechanism.

  15. 3D analytical model for the SOI LDMOS with alternating silicon and high-k dielectric pillars

    NASA Astrophysics Data System (ADS)

    Yao, Jia-fei; Guo, Yu-feng; Xia, Tian; Zhang, Jun; Lin, Hong

    2016-08-01

    In this paper, a 3D analytical model for the SOI LDMOS with alternating silicon and high-k dielectric pillars (HK LDMOS) is presented. By solving the 3D Poisson's equation, the surface potential and electric field distribution are derived. A criterion for obtaining the optimal breakdown voltage and drift region doping concentration is obtained. The analytical results are well matched with the numerical results, which confirms the model validity. Based on these models and the numerical simulation, the electric field modulation mechanism and the breakdown characteristics of HK LDMOS are investigated.

  16. Modeling of nonlinearities in the capacitance-voltage characteristics of high-k metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Gonon, P.; Vallée, C.

    2007-04-01

    Metal-insulator-metal capacitors using high-k oxides are known to display nonlinear capacitance-voltage (C-V) characteristics. In the present work it is proposed that such nonlinearities arise from an electrode polarization mechanism. By considering a field activated hopping conduction in the bulk (related to oxygen vacancies), a simple analytical expression is derived which relates the capacitance to the applied bias. The model is able to predict voltage coefficients of capacitance and is found to be in good agreement with experimental C-V.

  17. TiO2/GeOxNy stacked gate dielectrics for Ge-MOSFETs

    NASA Astrophysics Data System (ADS)

    Bera, M. K.; Mahata, C.; Chakraborty, A. K.; Nandi, S. K.; Tiwari, Jitendra N.; Hung, Jui-Yi; Maiti, C. K.

    2007-12-01

    In this work, we present the results of physical and electrical characterization of Ti-based high-k gate dielectrics on Ge substrates. Titanium tetrakis iso- propoxide (TTIP) was used as the organometallic source for the deposition of ultra-thin TiO2 films on p-Ge (1 0 0) at low temperature (<200 °C) by plasma enhanced chemical vapor deposition (PECVD) technique in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of ~65 Pa. The presence of an ultra-thin lossy GeO2 interfacial layer between the deposited high-k film and the substrate, results in frequency-dependent capacitance-voltage (C-V) characteristics in strong accumulation and a high interface state density (~1013 cm-2 eV-1). To improve the electrical properties, nitrogen engineering has been employed to convert the lossy GeO2 interfacial layer to its oxynitride, thus forming TiO2/GeOxNy/Ge stacked-gate structure with improved interface/electrical properties. Different N sources, such as NO, NH3 and NO/NH3, have been used for nitrogen engineering. XPS and Raman spectroscopy analyses have been used for surface morphological study. Electrical properties, such as gate leakage current density, interface state density, charge trapping, flatband voltage shift, etc, have been studied in detail for TiO2/GeOxNy/Ge MIS capacitors using the current-voltage (I-V), capacitance-voltage (C-V), conductance-voltage (G-V) and stress (both constant voltage and current) measurements. Although a significant improvement in electrical characteristics has been observed after nitridation in general, the formation of the interfacial GeOxNy layer, obtained from NO-plasma nitridation, is found to provide the maximum improvement among all the nitridation techniques used in this study. It is shown that the insertion of an ultra-thin oxynitride (GeOxNy) interfacial layer is advantageous for producing gate-quality TiO2 high-k dielectric stacks on Ge substrates.

  18. Effect of film properties for non-linear DPL model in a nanoscale MOSFET with high-k material: ZrO2/HfO2/La2O3

    NASA Astrophysics Data System (ADS)

    Shomali, Zahra; Ghazanfarian, Jafar; Abbassi, Abbas

    2015-07-01

    Numerical simulation of non-linear non-Fourier heat conduction within a nano-scale metal-oxide-semiconductor field-effect transistor (MOSFET) is presented under the framework of Dual-Phase-Lag model including the boundary phonon scattering. The MOSFET is modeled in four cases of: (I) thin silicon slab, (II) including uniform heat generation, (III) double-layered buried oxide MOSFET with uniform heat generation in silicon-dioxide layer, and (IV) high-k/metal gate transistor. First, four cases are studied under four conditions of (a) constant bulk and (b) constant film thermal properties, (c) temperature-dependent properties of bulk silicon, and (d) temperature-dependent thermal properties of film silicon. The heat source and boundary conditions are similar to what existed in a real MOSFET. It is concluded that in all cases, considering the film properties lowers the temperature jump due to the reduction of the Knudsen number. Furthermore, the speed of heat flux penetration for film properties is less than that of the cases concerning bulk properties. Also, considering the temperature-dependent properties drastically changes the temperature and heat flux distributions within the transistor, which increases the diffusion speed and more, decreases the steady state time. Calculations for case (III) presents that all previous studies have underestimated the value of the peak temperature rise by considering the constant bulk properties of silicon. Also, it is found that among the high-k dielectrics investigated in case (IV), zirconium dioxide shows the least peak temperature rise. This presents that zirconium dioxide is a good candidate as far as the thermal issues are concerned.

  19. 22. DETAIL VIEW OF NONSUBMERSIBLE TAINTER GATE, SHOWING TRUNNION PIN, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    22. DETAIL VIEW OF NONSUBMERSIBLE TAINTER GATE, SHOWING TRUNNION PIN, GATE ARM AND GATE GAUGE, LOOKING NORTHWEST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 10, Guttenberg, Clayton County, IA

  20. 23. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING TRUNNION PIN, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    23. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING TRUNNION PIN, GATE ARM AND GATE GAUGE, LOOKING SOUTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 10, Guttenberg, Clayton County, IA

  1. 17. DETAIL VIEW OF TAINTER GATE, SHOWING SUBMERSIBLE (LEFT) AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    17. DETAIL VIEW OF TAINTER GATE, SHOWING SUBMERSIBLE (LEFT) AND NONSUBMERSIBLE (RIGHT) GATES, PIERS AND DAM BRIDGE, WITH ROLLER GATE HEADHOUSE IN BACKGROUND, LOOKING NORTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 10, Guttenberg, Clayton County, IA

  2. The impact of energy barrier height on border traps in the metal insulator semicondoctor gate stacks on III–V semiconductors

    NASA Astrophysics Data System (ADS)

    Yoshida, Shinichi; Taniguchi, Satoshi; Minari, Hideki; Lin, Dennis; Ivanov, Tsvetan; Watanabe, Heiji; Nakazawa, Masashi; Collaert, Nadine; Thean, Aaron

    2016-08-01

    We investigated the effect of a thin interfacial layer (IL) made of silicon or germanium between high-k dielectrics and III–V semiconductors on the frequency dispersion of the capacitance–voltage (C–V) curves in detail. We demonstrated experimentally that the frequency dispersion at accumulation voltage is strongly dependent on the energy barrier height (ΦB) between high-k dielectrics and semiconductors. It was revealed that the improvement of frequency dispersion for n-type III–V semiconductors with IL is attributed to the increase in ΦB realized by inserting Ge IL. Moreover, the border trap density did not necessarily decrease with IL through the assessment of border trap density using a distributed bulk-oxide trap model. Finally, we proved that it is important to increase ΦB to suppress the carrier exchange and improve high-k/III–V gate stack reliability.

  3. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    SciTech Connect

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  4. Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

    NASA Astrophysics Data System (ADS)

    Condori Quispe, Hugo O.; Encomendero-Risco, Jimy J.; Xing, Huili Grace; Sensale-Rodriguez, Berardi

    2016-08-01

    We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

  5. Petrological and geochemical characteristics of Cenozoic high-K calc-alkaline volcanism in Konya, Central Anatolia, Turkey

    NASA Astrophysics Data System (ADS)

    Temel, Abidin; Gündoğdu, M. Niyazi; Gourgaud, Alain

    1998-10-01

    Late Miocene to Pliocene volcanic rocks outcrop west, northwest and southwest of the Konya area in Central Anatolia, Turkey. Volcanic products are lava domes, nuée ardentes and ignimbrite deposits, predominantly andesitic to dasitic in composition, together with rare basalt, basaltic andesite, basaltic trachyandesite and trachyandesite (50.35-69.39% SiO 2). The serie exhibits high-K calc-alkaline affinities. Fractional crystallization of pyroxene, plagioclase and Fe-Ti oxides is the main process in the magmatic evolution of Konya volcanic rocks. Volcanic units exhibit typical high-K calc-alkaline character. Their geochemical characteristics (e.g., enrichments in LIL elements such as K, Rb, Ba, Sr, depletion in HFSE such as Ti, Nb, and high Ba/Nb and Low Nb/Y ratios) are consistent with those of active continental margin regions. High 87Sr/ 86Sr (0.704841-0.707340) and low 143Nd/ 144Nd (0.512390-0.512618) ratios suggest crustal involvement in their petrogenesis. Correlations between 86Sr/ 87Sr isotope with Rb, Rb/Nb, Rb/Ba, and Rb/Sr also emphasize the effect of crustal contamination on the andesitic and dacitic magmas. As a consequence, Konya volcanic rocks are products of assimilation and fractional crystallization (AFC) processes of a magma which seems to be linked to the subduction of the African plate underneath the Anatolian plate during Miocene.

  6. Quantum logic gates for superconducting resonator qudits

    SciTech Connect

    Strauch, Frederick W.

    2011-11-15

    We study quantum information processing using superpositions of Fock states in superconducting resonators as quantum d-level systems (qudits). A universal set of single and coupled logic gates is theoretically proposed for resonators coupled by superconducting circuits of Josephson junctions. These gates use experimentally demonstrated interactions and provide an attractive route to quantum information processing using harmonic oscillator modes.

  7. Metric optimized gating for fetal cardiac MRI.

    PubMed

    Jansz, Michael S; Seed, Mike; van Amerom, Joshua F P; Wong, Derek; Grosse-Wortmann, Lars; Yoo, Shi-Joon; Macgowan, Christopher K

    2010-11-01

    Phase-contrast magnetic resonance imaging can be used to complement echocardiography for the evaluation of the fetal heart. Cardiac imaging typically requires gating with peripheral hardware; however, a gating signal is not readily available in utero. No successful application of existing technologies to human fetal phase-contrast magnetic resonance imaging has been reported to date in the literature. The purpose of this work is to develop a technique for phase-contrast magnetic resonance imaging of the fetal heart that does not require measurement of a gating signal. Metric optimized gating involves acquiring data without gating and retrospectively determining the proper reconstruction by optimizing an image metric. The effects of incorrect gating on phase contrast images were investigated, and the time-entropy of the series of images was found to provide a good measure of the level of corruption. The technique was validated with a pulsatile flow phantom, experiments with adult volunteers, and in vivo application in the fetal population. Images and flow curves from these measurements are presented. Additionally, numerical simulations were used to investigate the degree to which heart rate variability affects the reconstruction process. Metric optimized gating enables imaging with conventional phase-contrast magnetic resonance imaging sequences in the absence of a gating signal, permitting flow measurements in the great vessels in utero. PMID:20632406

  8. Retaining latch for a water pit gate

    DOEpatents

    Beale, A.R.

    1997-11-18

    A retaining latch is described for use in a hazardous materials storage or handling facility to adjustably retain a water pit gate in a gate frame. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame. 4 figs.

  9. Reconstruction of dynamic gated cardiac SPECT

    SciTech Connect

    Jin Mingwu; Yang Yongyi; King, Michael A.

    2006-11-15

    In this paper we propose an image reconstruction procedure which aims to unify gated single photon emission computed tomography (SPECT) and dynamic SPECT into a single method. We divide the cardiac cycle into a number of gate intervals as in gated SPECT, but treat the tracer distribution for each gate as a time-varying signal. By using both dynamic and motion-compensated temporal regularization, our reconstruction procedure will produce an image sequence that shows both cardiac motion and time-varying tracer distribution simultaneously. To demonstrate the proposed reconstruction method, we simulated gated cardiac perfusion imaging using the gated mathematical cardiac-torso (gMCAT) phantom with Tc99m-Teboroxime as the imaging agent. Our results show that the proposed method can produce more accurate reconstruction of gated dynamic images than independent reconstruction of individual gate frames with spatial smoothness alone. In particular, our results show that the former could improve the contrast to noise ratio of a simulated perfusion defect by as much as 100% when compared to the latter.

  10. Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

    PubMed

    Bae, Jong-Ho; Lee, Jong-Ho

    2016-05-01

    A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec. PMID:27483846

  11. Gating of Permanent Molds for ALuminum Casting

    SciTech Connect

    David Schwam; John F. Wallace; Tom Engle; Qingming Chang

    2004-03-30

    This report summarizes a two-year project, DE-FC07-01ID13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings.

  12. Electro-optical graphene plasmonic logic gates.

    PubMed

    Ooi, Kelvin J A; Chu, Hong Son; Bai, Ping; Ang, Lay Kee

    2014-03-15

    The versatile control of graphene's plasmonic modes via an external gate-voltage inspires us to design efficient electro-optical graphene plasmonic logic gates at the midinfrared wavelengths. We show that these devices are superior to the conventional optical logic gates because the former possess cut-off states and interferometric effects. Moreover, the designed six basic logic gates (i.e., NOR/AND, NAND/OR, XNOR/XOR) achieved not only ultracompact size lengths of less than λ/28 with respect to the operating wavelength of 10 μm, but also a minimum extinction ratio as high as 15 dB. These graphene plasmonic logic gates are potential building blocks for future nanoscale midinfrared photonic integrated circuits. PMID:24690855

  13. Locking apparatus for gate valves

    DOEpatents

    Fabyan, Joseph; Williams, Carl W.

    1988-01-01

    A locking apparatus for fluid operated valves having a piston connected to the valve actuator which moves in response to applied pressure within a cylinder housing having a cylinder head, a catch block is secured to the piston, and the cylinder head incorporates a catch pin. Pressure applied to the cylinder to open the valve moves the piston adjacent to the cylinder head where the catch pin automatically engages the catch block preventing futher movement of the piston or premature closure of the valve. Application of pressure to the cylinder to close the valve, retracts the catch pin, allowing the valve to close. Included are one or more selector valves, for selecting pressure application to other apparatus depending on the gate valve position, open or closed, protecting such apparatus from damage due to premature closing caused by pressure loss or operational error.

  14. Locking apparatus for gate valves

    DOEpatents

    Fabyan, J.; Williams, C.W.

    A locking apparatus for fluid operated valves having a piston connected to the valve actuator which moves in response to applied pressure within a cylinder housing having a cylinder head, a catch block is secured to the piston, and the cylinder head incorporates a catch pin. Pressure applied to the cylinder to open the valve moves the piston adjacent to the cylinder head where the catch pin automatically engages the catch block preventing further movement of the piston or premature closure of the valve. Application of pressure to the cylinder to close the valve, retracts the catch pin, allowing the valve to close. Included are one or more selector valves, for selecting pressure application to other apparatus depending on the gate valve position, open or closed, protecting such apparatus from damage due to premature closing caused by pressure loss or operational error.

  15. Regulation of CFTR channel gating.

    PubMed

    Gadsby, D C; Hwang, T C; Baukrowitz, T; Nagel, G; Horie, M; Nairn, A C

    1994-01-01

    Findings outlined here support a complex model for the regulation of cystic fibrosis transmembrane conductance regulator (CFTR) Cl channel gating that incorporates incremental protein kinase A (PKA) phosphorylation of CFTR at multiple sites which, in turn, differentially control the activity of CFTR's two nucleotide-binding domains (NBDs). The NBDs are functionally distinct: only one can respond to the non-hydrolyzable ATP analogue AMP-PNP, and then only after ATP has acted at the other. Moreover, the nature of the responses to AMP-PNP, and to the inorganic phosphate analogue orthovanadate, argues that ATP hydrolysis normally occurs at both NBDs, at one to initiate channel opening and at the other to initiate closing. PMID:7752525

  16. Mechanosensitive gating of Kv channels.

    PubMed

    Morris, Catherine E; Prikryl, Emil A; Joós, Béla

    2015-01-01

    K-selective voltage-gated channels (Kv) are multi-conformation bilayer-embedded proteins whose mechanosensitive (MS) Popen(V) implies that at least one conformational transition requires the restructuring of the channel-bilayer interface. Unlike Morris and colleagues, who attributed MS-Kv responses to a cooperative V-dependent closed-closed expansion↔compaction transition near the open state, Mackinnon and colleagues invoke expansion during a V-independent closed↔open transition. With increasing membrane tension, they suggest, the closed↔open equilibrium constant, L, can increase >100-fold, thereby taking steady-state Popen from 0→1; "exquisite sensitivity to small…mechanical perturbations", they state, makes a Kv "as much a mechanosensitive…as…a voltage-dependent channel". Devised to explain successive gK(V) curves in excised patches where tension spontaneously increased until lysis, their L-based model falters in part because of an overlooked IK feature; with recovery from slow inactivation factored in, their g(V) datasets are fully explained by the earlier model (a MS V-dependent closed-closed transition, invariant L≥4). An L-based MS-Kv predicts neither known Kv time courses nor the distinctive MS responses of Kv-ILT. It predicts Kv densities (hence gating charge per V-sensor) several-fold different from established values. If opening depended on elevated tension (L-based model), standard gK(V) operation would be compromised by animal cells' membrane flaccidity. A MS V-dependent transition is, by contrast, unproblematic on all counts. Since these issues bear directly on recent findings that mechanically-modulated Kv channels subtly tune pain-related excitability in peripheral mechanoreceptor neurons we undertook excitability modeling (evoked action potentials). Kvs with MS V-dependent closed-closed transitions produce nuanced mechanically-modulated excitability whereas an L-based MS-Kv yields extreme, possibly excessive (physiologically

  17. Oxygen migration in TiO{sub 2}-based higher-k gate stacks

    SciTech Connect

    Kim, Sang Bum; Brown, Stephen L.; Rossnagel, Stephen M.; Bruley, John; Copel, Matthew; Hopstaken, Marco J. P.; Narayanan, Vijay; Frank, Martin M.

    2010-03-15

    We report on the stability of high-permittivity (high-k) TiO{sub 2} films incorporated in metal-oxide-silicon capacitor structures with a TiN metal gate electrode, focusing on oxygen migration. Titanium oxide films are deposited by either Ti sputtering [physical vapor deposition (PVD)] followed by radical shower oxidation or by plasma-enhanced atomic layer deposition (PEALD) from titanium isopropoxide (Ti{l_brace}OCH(CH{sub 3}){sub 2{r_brace}4}) and O{sub 2} plasma. Both PVD and PEALD films result in near-stoichiometric TiO{sub 2} prior to high-temperature annealing. We find that dopant activation anneals of TiO{sub 2}-containing gate stacks at 1000 deg. C cause 5 A or more of additional SiO{sub 2} to be formed at the gate-dielectric/Si-channel interface. Furthermore, we demonstrate for the first time that oxygen released from TiO{sub 2} diffuses through the TiN gate electrode and oxidizes the poly-Si contact. The thickness of this upper SiO{sub 2} layer continues to increase with increasing TiO{sub 2} thickness, while the thickness of the regrown SiO{sub 2} at the gate-dielectric/Si interface saturates. The upper SiO{sub 2} layer degrades gate stack capacitance, and simultaneously the oxygen-deficient TiO{sub x} becomes a poor insulator. In an attempt to mitigate O loss from the TiO{sub 2}, top and bottom Al{sub 2}O{sub 3} layers are added to the TiO{sub 2} gate dielectric as oxygen barriers. However, they are found to be ineffective, due to Al{sub 2}O{sub 3}-TiO{sub 2} interdiffusion during activation annealing. Bottom HfO{sub 2}/Si{sub 3}N{sub 4} interlayers are found to serve as more effective oxygen barriers, reducing, though not preventing, oxygen downdiffusion.

  18. Searching for high-k RE2O3 nanoparticles embedded in SiO2 glass matrix

    NASA Astrophysics Data System (ADS)

    Mukherjee, S.; Lin, Y. H.; Kao, T. H.; Chou, C. C.; Yang, H. D.

    2012-03-01

    Significant experimental effort has been explored to search and characterize high-k materials with magnetodielectric effect (MDE) of series of rare earth (RE) oxide (RE2O3) nanoparticles (NPs) embedded in SiO2 glass matrix by a sol-gel route. Properly annealed sol-gel glass (in which RE = Sm, Gd, and Er) shows colossal response of dielectric constant along with diffuse phase transition and MDE around room temperature. The radial distribution functions, reconstructed from extended x-ray absorption fine structure, show the shortening of RE3 + -O depending on the RE2O3 NP size, which is consistent with oxygen vacancy induced dielectric anomaly. The magnetoresistive MDE is very much conditioned by magnetic property of RE2O3 NP grain, the degree of deformation of the lattice and constituent host.

  19. Connections between high-K and low-K states in the s-process nucleus {sup 176}Lu

    SciTech Connect

    Dracoulis, G. D.; Lane, G. J.; Byrne, A. P.; Kondev, F. G.; Carpenter, M. P.; Janssens, R. V. F.; Lauritsen, T.; Lister, C. J.; Seweryniak, D.; Chowdhury, P.

    2010-01-15

    Gamma-ray branches that connect high-K states to low-K states in the s-process nucleus {sup 176}Lu were observed, thus providing a link between the 58 Gyr, 7{sup -} ground state and the 5.3 h, 1{sup -} isomeric state. High sensitivity and unambiguous placement were achieved through the study of the decay of the 58 {mu}s K{sup {pi}}=14{sup +} isomer using {gamma}-{gamma}-coincidence measurements. The large number of decay paths from the isomer provides a means of populating a broad selection of states from above, resulting, paradoxically, in higher sensitivity than in cases where low-spin input reactions are used. The out-of band decay widths important for excitation processes in stars are quantified.

  20. Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Vallée, C.; Gonon, P.; Jorel, C.; El Kamel, F.

    2010-06-01

    This work highlights the influence of the oxygen affinity of the metal electrodes used in high-k metal-insulator-metal capacitors. Several metallic electrodes are tested in order to investigate the role of the metal work function, and the role of the electrode oxygen-affinity in nonlinear behavior of HfO2 and BaTiO3 capacitors. It is shown that the magnitude of the quadratic coefficient of nonlinearity is better explained by the electrode oxygen-affinity rather than by its work function. It is thought that electrode oxidation increases the number of oxygen vacancies at the electrode/dielectric interface, and so increases the magnitude of nonlinearity.

  1. Mechanical properties of low- and high-k dielectric thin films: A surface Brillouin light scattering study

    NASA Astrophysics Data System (ADS)

    Zizka, J.; King, S.; Every, A. G.; Sooryakumar, R.

    2016-04-01

    Surface Brillouin light scattering measurements are used to determine the elastic constants of nano-porous low-k SiOC:H (165 nm) and high-k HfO2 (25 nm) as well as BN:H (100 nm) films grown on Si substrates. In addition, the study investigates the mechanical properties of ultra-thin (25 nm) blanket TiN cap layers often used as hard masks for patterning, and their effects on the underlying low-k dielectrics that support a high level of interconnected porosity. Depending on the relative material properties of individual component layers, the acoustic modes manifest as confined, propagating, or damped resonances in the light scattering spectra, thereby enabling the mechanical properties of the ultra-thin films to be determined.

  2. Distribution of anomalously high K2O volcanic rocks in Arizona: metasomatism at the Picacho Peak detachment fault.

    USGS Publications Warehouse

    Brooks, W.E.

    1986-01-01

    Metasomatized Tertiary lavas with anomalously high K2O and lower Na2O content are distributed within the NW-trending extensional terrain of SW Arizona. These rocks are common near core-complex-related detachment faults at Picacho Peak and the Harcuvar Mountains and in listric-faulted terrain at the Vulture Mountains. These rocks are also enriched in Zr but depleted in MgO. Fine-grained, euhedral orthoclase (adularia) is the dominant K-mineral; other secondary introduced minerals are quartz and calcite. Spatial association of metasomatism with the detachment faults suggests that detachment provided a conduit for hydrothermal fluids that altered the initial chemistry of the Tertiary volcanics and charged the upper plate rocks with mineralizing fluids that carried Zr and Ba, along with Au, Ag and Cu during detachment 17-18 m.y. ago.-L.C.H.

  3. Adaptive quantum gate-set tomography

    NASA Astrophysics Data System (ADS)

    Blume-Kohout, Robin

    2013-03-01

    Quantum information hardware needs to be characterized and calibrated. This is the job of quantum state and process tomography, but standard tomographic methods have an Achilles heel: to characterize an unknown process, they rely on a set of absolutely calibrated measurements. But many technologies (e.g., solid-state qubits) admit only a single native measurement basis, and other bases are measured using unitary control. So tomography becomes circular - tomographic protocols are using gates to calibrate themselves! Gate-set tomography confronts this problem head-on and resolves it by treating gates relationally. We abandon all assumptions about what a given gate operation does, and characterize entire universal gate sets from the ground up using only the observed statistics of an [unknown] 2-outcome measurement after various strings of [unknown] gate operations. The accuracy and reliability of the resulting estimate depends critically on which gate strings are used, and benefits greatly from adaptivity. Sandia National Labs is a multiprogram laboratory operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Dept. of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000

  4. Modeling and simulation of electrostatically gated nanochannels.

    PubMed

    Pardon, G; van der Wijngaart, W

    2013-11-01

    Today, despite the growing interest in nanofluidics, the descriptions of the many complex physical phenomena occurring at this scale remain scattered in the literature. Due to the additional complexity encountered when considering electrostatic nanofluidic gating, it is important to regroup several relevant theories and discuss them with regard to this application. In this work, we present a theoretical study of electrostatically gated phenomena and propose a model for the electrostatic gating of ion and molecular transport in nanochannels. In addition to the classical electrokinetic equations, that are reviewed in this work, several relevant phenomena are considered and combined to describe gating effects on nanofluidic properties more accurately. Dynamic surface charging is accounted for and is shown to be an essential element for electrostatic gating. The autoprotolysis of water is also considered to allow for accurate computing of the surface charge. Modifications of the Nernst-Planck equations are considered for more accurate computing of the concentration profiles at higher surface potentials by accounting for ion crowding near charge walls. The sensitivity of several parameters to the electric field and ion crowding is also studied. Each of these models is described separately before their implementation in a finite element model. The model is verified against previous experimental work. Finally, the model is used to simulate the tuning of the ionic current through the nanochannel via electrostatic gating. The influence of the additional models on these results is discussed. Guidelines for potentially better gating efficiencies are finally proposed. PMID:23915526

  5. Cardiac imaging using gated magnetic resonance

    SciTech Connect

    Lanzer, P.; Botvinick, E.H.; Schiller, N.B.

    1984-01-01

    To overcome the limitations of magnetic resonance (MR) cardiac imaging using nongated data acquisition, three methods for acquiring a gating signal, which could be applied in the presence of a magnetic field, were tested; an air-filled plethysmograph, a laser-Doppler capillary perfusion flowmeter, and an electrocardiographic gating device. The gating signal was used for timing of MR imaging sequences (IS). Application of each gating method yielded significant improvements in structural MR image resolution of the beating heart, although with both plethysmography and laser-Doppler velocimetry it was difficult to obtain cardiac images from the early portion of the cardiac cycle due to an intrinsic delay between the ECG R wave and peripheral detection of the gating signal. Variations in the temporal relationship between the R wave and plethysmographic and laser-Doppler signals produced inconsistencies in the timing of IS. Since the ECG signal is virtually free of these problems, the preferable gating technique is IS synchronization with an electrocardiogram. The gated images acquired with this method provide sharp definition of internal cardiac morphology and can be temporarily referenced to end diastole and end systole or intermediate points.

  6. Range gating experiments through a scattering media

    SciTech Connect

    Payton, J.; Cverna, F.; Gallegos, R.; McDonald, T.; Numkena, D.; Obst, A.; Pena-Abeyta, C.; Yates, G.

    1998-12-31

    This paper discusses range-gated imaging experiments performed recently at Redstone Arsenal in Huntsville, Alabama. Range gating is an imaging technique that uses a pulsed laser and gated camera to image objects at specific ranges. The technique can be used for imaging through scattering media such as dense smoke or fog. Range gating uses the fact that light travels at 3 x 10{sup 8} m/s. Knowing the speed of light the authors can calculate the time it will take the laser light to travel a known distance, then gate open a Micro Channel Plate Image Intensifier (MCPII) at the time the reflected light returns from the target. In the Redstone experiment the gate width on the MCPII was set to equal the laser pulse width ({approximately} 8 ns) for the highest signal to noise ratio. The gate allows the light reflected form the target and a small portion of the light reflected from the smoke in the vicinity of the target to be imaged. They obtained good results in light and medium smoke but the laser they were used did not have sufficient intensity to penetrate the thickest smoke. They did not diverge the laser beam to cover the entire target in order to maintain a high flux that would achieve better penetration through the smoke. They were able to image an Armored Personnel Carrier (APC) through light and medium smoke but they were not able to image the APC through heavy smoke. The experiment and results are presented.

  7. Graduate Automotive Technology Education (GATE) Center

    SciTech Connect

    Jeffrey Hodgson; David Irick

    2005-09-30

    The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its sixth year of operation. During this period the Center has involved thirteen GATE Fellows and ten GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center's focus area: hybrid drive trains and control systems. Eighteen GATE students have graduated, and three have completed their course work requirements. Nine faculty members from three departments in the College of Engineering have been involved in the GATE Center. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as internships, equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $4,000,000. Problem areas are discussed in the hope that future activities may benefit from the operation of the current program.

  8. KGS-HighK: A Fortran 90 program for simulation of hydraulic tests in highly permeable aquifers

    USGS Publications Warehouse

    Zhan, X.; Butler, J.J., Jr.

    2006-01-01

    Slug and pumping tests (hydraulic tests) are frequently used by hydrogeologists to obtain in-situ estimates of the transmissive and storage properties of a formation (Streltsova, 1988; Kruseman and de Ridder, 1990; Butler, 1998). In aquifers of high hydraulic conductivity, hydraulic tests are affected by mechanisms that are not considered in the analysis of tests in less permeable media (Bredehoeft et al., 1966). Inertia-induced oscillations in hydraulic head are the most common manifestation of such mechanisms. Over the last three decades, a number of analytical solutions that incorporate these mechanisms have been developed for the analysis of hydraulic tests in highly permeable aquifers (see Butler and Zhan (2004) for a review of this previous work). These solutions, however, are restricted to a subset of the conditions commonly encountered in the field. Recently, a more general solution has been developed that builds on this previous work to remove many of the limitations imposed by these earlier approaches (Butler and Zhan, 2004). The purpose of this note is to present a Fortran 90 program, KGS-HighK, for the evaluation of this new solution. This note begins with a brief overview of the conceptual model that motivated the development of the solution of Butler and Zhan (2004) for pumping- and slug-induced flow to/from a central well. The major steps in the derivation of that solution are described, but no details are given. Instead, a Mathematica notebook is provided for those interested in the derivation details. The key algorithms used in KGS-HighK are then described and the program structure is briefly outlined. A field example is provided to demonstrate program performance. The note concludes with a short summary section. ?? 2005 Elsevier Ltd. All rights reserved.

  9. Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers.

    PubMed

    Alaboson, Justice M P; Wang, Qing Hua; Emery, Jonathan D; Lipson, Albert L; Bedzyk, Michael J; Elam, Jeffrey W; Pellin, Michael J; Hersam, Mark C

    2011-06-28

    The development of high-performance graphene-based nanoelectronics requires the integration of ultrathin and pinhole-free high-k dielectric films with graphene at the wafer scale. Here, we demonstrate that self-assembled monolayers of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) act as effective organic seeding layers for atomic layer deposition (ALD) of HfO(2) and Al(2)O(3) on epitaxial graphene on SiC(0001). The PTCDA is deposited via sublimation in ultrahigh vacuum and shown to be highly ordered with low defect density by molecular-resolution scanning tunneling microscopy. Whereas identical ALD conditions lead to incomplete and rough dielectric deposition on bare graphene, the chemical functionality provided by the PTCDA seeding layer yields highly uniform and conformal films. The morphology and chemistry of the dielectric films are characterized by atomic force microscopy, ellipsometry, cross-sectional scanning electron microscopy, and X-ray photoelectron spectroscopy, while high-resolution X-ray reflectivity measurements indicate that the underlying graphene remains intact following ALD. Using the PTCDA seeding layer, metal-oxide-graphene capacitors fabricated with a 3 nm Al(2)O(3) and 10 nm HfO(2) dielectric stack show high capacitance values of ∼700 nF/cm(2) and low leakage currents of ∼5 × 10(-9) A/cm(2) at 1 V applied bias. These results demonstrate the viability of sublimated organic self-assembled monolayers as seeding layers for high-k dielectric films in graphene-based nanoelectronics. PMID:21553842

  10. Low-voltage and hysteresis-free organic thin-film transistors employing solution-processed hybrid bilayer gate dielectrics

    SciTech Connect

    Ha, Tae-Jun

    2014-07-28

    This study presents a promising approach to realize low-voltage (<3 V) organic thin-film transistors (OTFTs) exhibiting improved electrical and optical stability. Such device performance results from the use of solution-processed hybrid bilayer gate dielectrics consisting of zirconium dioxide (high-k dielectric) and amorphous fluoropolymer, CYTOP{sup ®} (low-k dielectric). Employing a very thin amorphous fluoropolymer film reduces interfacial defect-states by repelling water molecules and other aqueous chemicals from an organic semiconductor active layer due to the hydrophobic surface-property. The chemically clean interface, stemming from decrease in density of trap states improves all the key device properties such as field-effect mobility, threshold voltage, and sub-threshold swing. Furthermore, degradation by electrical bias-stress and photo-induced hysteresis were suppressed in OTFTs employing hybrid bilayer gate dielectrics.

  11. Low-voltage and hysteresis-free organic thin-film transistors employing solution-processed hybrid bilayer gate dielectrics

    NASA Astrophysics Data System (ADS)

    Ha, Tae-Jun

    2014-07-01

    This study presents a promising approach to realize low-voltage (<3 V) organic thin-film transistors (OTFTs) exhibiting improved electrical and optical stability. Such device performance results from the use of solution-processed hybrid bilayer gate dielectrics consisting of zirconium dioxide (high-k dielectric) and amorphous fluoropolymer, CYTOP® (low-k dielectric). Employing a very thin amorphous fluoropolymer film reduces interfacial defect-states by repelling water molecules and other aqueous chemicals from an organic semiconductor active layer due to the hydrophobic surface-property. The chemically clean interface, stemming from decrease in density of trap states improves all the key device properties such as field-effect mobility, threshold voltage, and sub-threshold swing. Furthermore, degradation by electrical bias-stress and photo-induced hysteresis were suppressed in OTFTs employing hybrid bilayer gate dielectrics.

  12. Determination of the density of the defect states in Hf{sub 0.5}Zr{sub 0.5}O{sub 2} high-k film Deposited by using rf-magnetron sputtering technique

    SciTech Connect

    Lu, W.; Lu, J. X.; Ou, X.; Liu, X. J.; Cao, Y. Q.; Li, A. D.; Xu, B.; Xia, Y. D.; Yin, J.; Liu, Z. G.

    2014-08-15

    A memory structure Pt/Al{sub 2}O{sub 3}/Hf{sub 0.5}Zr{sub 0.5}O{sub 2}/Al{sub 2}O{sub 3}/p-Si was fabricated by using atomic layer deposition and rf-magnetron sputtering techniques, and its microstructure has been investigated by using the high resolution transmission electron microscopy (HRTEM). By measuring the applied gate voltage dependence of the capacitance for the memory structure, the planar density of the trapped charges in Hf{sub 0.5}Zr{sub 0.5}O{sub 2} high-k film was estimated as 6.63 × 10{sup 12} cm{sup −2}, indicating a body defect density of larger than 2.21 × 10{sup 19} cm{sup −3}. It is observed that the post-annealing in N{sub 2} can reduces the defect density in Hf{sub 0.5}Zr{sub 0.5}O{sub 2} film, which was ascribed to the occupancy of oxygen vacancies by nitrogen atoms.

  13. Coherent error suppression in multiqubit entangling gates.

    PubMed

    Hayes, D; Clark, S M; Debnath, S; Hucul, D; Inlek, I V; Lee, K W; Quraishi, Q; Monroe, C

    2012-07-13

    We demonstrate a simple pulse shaping technique designed to improve the fidelity of spin-dependent force operations commonly used to implement entangling gates in trapped ion systems. This extension of the Mølmer-Sørensen gate can theoretically suppress the effects of certain frequency and timing errors to any desired order and is demonstrated through Walsh modulation of a two qubit entangling gate on trapped atomic ions. The technique is applicable to any system of qubits coupled through collective harmonic oscillator modes. PMID:23030141

  14. Stay vane and wicket gate relationship study

    SciTech Connect

    None, None

    2005-01-19

    This report evaluates potential environmental and performance gains that can be achieved in a Kaplan turbine through non-structural modifications to stay vane and wicket gate assemblies. This summary is based primarily on data and conclusions drawn from models and studies of Lower Granite Dam. Based on this investigation, the study recommends (1) a proof of concept at Lower Granite Dam to establish predicted improvements for the existing turbine and to further refine the stay vane wicket gate designs for fish passage; and (2) consideration of the stay vane wicket gate systems in any future turbine rehabilitation studies.

  15. Gate assisted turn-off thyristor with cathode shunts and dynamic gate

    NASA Technical Reports Server (NTRS)

    Schlegel, E. S.; Page, D. J.

    1976-01-01

    A 1,000-V, 200-A gate-assisted turn-off thyristor (GATT) is described, whose design features include an interdigitated shunted cathode, a dynamic gate, a means for optimizing the carrier lifetime level, and a bypass diode. The device physics of gate-assisted turn-off are reviewed. Based on this, improvements in the design are described. It is shown that a prime failure mode can be eliminated and that the gate-assist signal voltage can be substantially decreased by employing a shunted cathode emitter. The test data show excellent turn-on characteristics due to the dynamic gate and the long perimeter of the edge of the main cathode. Turn-off times as short as 3 microsec are obtained. The combination of controlling the carrier lifetime with a precisely controlled and easily variable irradiation dose of high energy electrons with gate assist current provides for simple, precision tailoring of the device characteristics to the intended application.

  16. EduGATE - basic examples for educative purpose using the GATE simulation platform.

    PubMed

    Pietrzyk, Uwe; Zakhnini, Abdelhamid; Axer, Markus; Sauerzapf, Sophie; Benoit, Didier; Gaens, Michaela

    2013-02-01

    EduGATE is a collection of basic examples to introduce students to the fundamental physical aspects of medical imaging devices. It is based on the GATE platform, which has received a wide acceptance in the field of simulating medical imaging devices including SPECT, PET, CT and also applications in radiation therapy. GATE can be configured by commands, which are, for the sake of simplicity, listed in a collection of one or more macro files to set up phantoms, multiple types of sources, detection device, and acquisition parameters. The aim of the EduGATE is to use all these helpful features of GATE to provide insights into the physics of medical imaging by means of a collection of very basic and simple GATE macros in connection with analysis programs based on ROOT, a framework for data processing. A graphical user interface to define a configuration is also included. PMID:22909417

  17. 7. DETAIL VIEW OF TAINTER GATE PIER AND NONSUBMERSIBLE TAINTER ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. DETAIL VIEW OF TAINTER GATE PIER AND NON-SUBMERSIBLE TAINTER GATES DURING ERECTION, SHOWING LEFT GATE IN OPEN POSITION AND RIGHT GATE IN CLOSED POSITION, LOOKING NORTH (UPSTREAM). NOTE TEMPORARY SERVICE BRIDGE. - Upper Mississippi River 9-Foot Channel Project, Lock & Dam 26R, Alton, Madison County, IL

  18. Mechanosensitive Gating of Kv Channels

    PubMed Central

    Morris, Catherine E.; Prikryl, Emil A.; Joós, Béla

    2015-01-01

    K-selective voltage-gated channels (Kv) are multi-conformation bilayer-embedded proteins whose mechanosensitive (MS) Popen(V) implies that at least one conformational transition requires the restructuring of the channel-bilayer interface. Unlike Morris and colleagues, who attributed MS-Kv responses to a cooperative V-dependent closed-closed expansion↔compaction transition near the open state, Mackinnon and colleagues invoke expansion during a V-independent closed↔open transition. With increasing membrane tension, they suggest, the closed↔open equilibrium constant, L, can increase >100-fold, thereby taking steady-state Popen from 0→1; “exquisite sensitivity to small…mechanical perturbations”, they state, makes a Kv “as much a mechanosensitive…as…a voltage-dependent channel”. Devised to explain successive gK(V) curves in excised patches where tension spontaneously increased until lysis, their L-based model falters in part because of an overlooked IK feature; with recovery from slow inactivation factored in, their g(V) datasets are fully explained by the earlier model (a MS V-dependent closed-closed transition, invariant L≥4). An L-based MS-Kv predicts neither known Kv time courses nor the distinctive MS responses of Kv-ILT. It predicts Kv densities (hence gating charge per V-sensor) several-fold different from established values. If opening depended on elevated tension (L-based model), standard gK(V) operation would be compromised by animal cells’ membrane flaccidity. A MS V-dependent transition is, by contrast, unproblematic on all counts. Since these issues bear directly on recent findings that mechanically-modulated Kv channels subtly tune pain-related excitability in peripheral mechanoreceptor neurons we undertook excitability modeling (evoked action potentials). Kvs with MS V-dependent closed-closed transitions produce nuanced mechanically-modulated excitability whereas an L-based MS-Kv yields extreme, possibly excessive

  19. Synthesizing Biomolecule-based Boolean Logic Gates

    PubMed Central

    Miyamoto, Takafumi; Razavi, Shiva; DeRose, Robert; Inoue, Takanari

    2012-01-01

    One fascinating recent avenue of study in the field of synthetic biology is the creation of biomolecule-based computers. The main components of a computing device consist of an arithmetic logic unit, the control unit, memory, and the input and output devices. Boolean logic gates are at the core of the operational machinery of these parts, hence to make biocomputers a reality, biomolecular logic gates become a necessity. Indeed, with the advent of more sophisticated biological tools, both nucleic acid- and protein-based logic systems have been generated. These devices function in the context of either test tubes or living cells and yield highly specific outputs given a set of inputs. In this review, we discuss various types of biomolecular logic gates that have been synthesized, with particular emphasis on recent developments that promise increased complexity of logic gate circuitry, improved computational speed, and potential clinical applications. PMID:23526588

  20. Extending Double Optical Gating to the Midinfrared

    NASA Astrophysics Data System (ADS)

    Gorman, Timothy; Camper, Antoine; Agostini, Pierre; Dimauro, Louis

    2015-05-01

    In the past decade there has been great interest in creating broadband isolated attosecond pulses (IAPs). Primarily these IAPs have been generated using Ti:Sapphire 800nm short pulses, namely through spatiotemporal gating with the attosecond lighthouse technique, amplitude gating, polarization gating, and double optical gating (DOG). Here we present theoretical calculations and experimental investigations into extending DOG to using a 2 μm driving wavelength, the benefits of which include extended harmonic cutoff and longer input driving pulse durations. It is proposed that broadband IAPs with cutoffs extending up to 250 eV can be generated in Argon by using >30 fs pulses from the passively-CEP stabilized 2 μm idler out of an optical parametric amplifier combined with a collinear DOG experimental setup.

  1. Integrated photonic quantum gates for polarization qubits

    PubMed Central

    Crespi, Andrea; Ramponi, Roberta; Osellame, Roberto; Sansoni, Linda; Bongioanni, Irene; Sciarrino, Fabio; Vallone, Giuseppe; Mataloni, Paolo

    2011-01-01

    The ability to manipulate quantum states of light by integrated devices may open new perspectives both for fundamental tests of quantum mechanics and for novel technological applications. However, the technology for handling polarization-encoded qubits, the most commonly adopted approach, is still missing in quantum optical circuits. Here we demonstrate the first integrated photonic controlled-NOT (CNOT) gate for polarization-encoded qubits. This result has been enabled by the integration, based on femtosecond laser waveguide writing, of partially polarizing beam splitters on a glass chip. We characterize the logical truth table of the quantum gate demonstrating its high fidelity to the expected one. In addition, we show the ability of this gate to transform separable states into entangled ones and vice versa. Finally, the full accessibility of our device is exploited to carry out a complete characterization of the CNOT gate through a quantum process tomography. PMID:22127062

  2. Active gated imaging in driver assistance system

    NASA Astrophysics Data System (ADS)

    Grauer, Yoav

    2014-04-01

    In this paper, we shall present the active gated imaging system (AGIS) in relation to the automotive field. AGIS is based on a fast-gated camera and pulsed illuminator, synchronized in the time domain to record images of a certain range of interest. A dedicated gated CMOS imager sensor and near infra-red (NIR) pulsed laser illuminator, is presented in this paper to provide active gated technology. In recent years, we have developed these key components and learned the system parameters, which are most beneficial to nighttime (in all weather conditions) driving in terms of field of view, illumination profile, resolution, and processing power. We shall present our approach of a camera-based advanced driver assistance systems (ADAS) named BrightEye™, which makes use of the AGIS technology in the automotive field.

  3. Semiconductor photon counter with nanosecond gating capability

    NASA Astrophysics Data System (ADS)

    Kral, Lukas; Prochazka, Ivan; Hamal, Karel

    2007-05-01

    Single photon avalanche diodes (SPADs) based on various semiconductors have been developed at the Czech Technical University in Prague during the last 20 years. Much attention has been also paid to development of high-speed active quenching circuits for these detectors. Recently, we have performed a series of experiments to characterize our silicon-based photon counters and their capability of operation in a gated mode with the gate duration of single nanoseconds and the detector sensitivity rise time of hundreds of picoseconds. This performance has been achieved by optimizing the active quenching circuit and its components. The fast gating is needed in cases, when the photons of interest are generated short time after a strong optical signal, which cannot be suppressed in optical domain. The time dependence of detection sensitivity, detection delay and timing resolution within the nanosecond gates has been measured.

  4. Digital gate pulse generator for cycloconverter control

    DOEpatents

    Klein, Frederick F.; Mutone, Gioacchino A.

    1989-01-01

    The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

  5. Gated STED microscopy with time-gated single-photon avalanche diode

    PubMed Central

    Hernández, Iván Coto; Buttafava, Mauro; Boso, Gianluca; Diaspro, Alberto; Tosi, Alberto; Vicidomini, Giuseppe

    2015-01-01

    Stimulated emission depletion (STED) microscopy provides fluorescence imaging with sub-diffraction resolution. Experimentally demonstrated at the end of the 90s, STED microscopy has gained substantial momentum and impact only in the last few years. Indeed, advances in many fields improved its compatibility with everyday biological research. Among them, a fundamental step was represented by the introduction in a STED architecture of the time-gated detection, which greatly reduced the complexity of the implementation and the illumination intensity needed. However, the benefits of the time-gated detection came along with a reduction of the fluorescence signal forming the STED microscopy images. The maximization of the useful (within the time gate) photon flux is then an important aspect to obtain super-resolved images. Here we show that by using a fast-gated single-photon avalanche diode (SPAD), i.e. a detector able to rapidly (hundreds picoseconds) switch-on and -off can improve significantly the signal-to-noise ratio (SNR) of the gated STED image. In addition to an enhancement of the image SNR, the use of the fast-gated SPAD reduces also the system complexity. We demonstrate these abilities both on calibration and biological sample. The experiments were carried on a gated STED microscope based on a STED beam operating in continuous-wave (CW), although the fast-gated SPAD is fully compatible with gated STED implementations based on pulsed STED beams. PMID:26114044

  6. Smart gating membranes with in situ self-assembled responsive nanogels as functional gates

    NASA Astrophysics Data System (ADS)

    Luo, Feng; Xie, Rui; Liu, Zhuang; Ju, Xiao-Jie; Wang, Wei; Lin, Shuo; Chu, Liang-Yin

    2015-10-01

    Smart gating membranes, inspired by the gating function of ion channels across cell membranes, are artificial membranes composed of non-responsive porous membrane substrates and responsive gates in the membrane pores that are able to dramatically regulate the trans-membrane transport of substances in response to environmental stimuli. Easy fabrication, high flux, significant response and strong mechanical strength are critical for the versatility of such smart gating membranes. Here we show a novel and simple strategy for one-step fabrication of smart gating membranes with three-dimensionally interconnected networks of functional gates, by self-assembling responsive nanogels on membrane pore surfaces in situ during a vapor-induced phase separation process for membrane formation. The smart gating membranes with in situ self-assembled responsive nanogels as functional gates show large flux, significant response and excellent mechanical property simultaneously. Because of the easy fabrication method as well as the concurrent enhancement of flux, response and mechanical property, the proposed smart gating membranes will expand the scope of membrane applications, and provide ever better performances in their applications.

  7. Gated STED microscopy with time-gated single-photon avalanche diode.

    PubMed

    Hernández, Iván Coto; Buttafava, Mauro; Boso, Gianluca; Diaspro, Alberto; Tosi, Alberto; Vicidomini, Giuseppe

    2015-06-01

    Stimulated emission depletion (STED) microscopy provides fluorescence imaging with sub-diffraction resolution. Experimentally demonstrated at the end of the 90s, STED microscopy has gained substantial momentum and impact only in the last few years. Indeed, advances in many fields improved its compatibility with everyday biological research. Among them, a fundamental step was represented by the introduction in a STED architecture of the time-gated detection, which greatly reduced the complexity of the implementation and the illumination intensity needed. However, the benefits of the time-gated detection came along with a reduction of the fluorescence signal forming the STED microscopy images. The maximization of the useful (within the time gate) photon flux is then an important aspect to obtain super-resolved images. Here we show that by using a fast-gated single-photon avalanche diode (SPAD), i.e. a detector able to rapidly (hundreds picoseconds) switch-on and -off can improve significantly the signal-to-noise ratio (SNR) of the gated STED image. In addition to an enhancement of the image SNR, the use of the fast-gated SPAD reduces also the system complexity. We demonstrate these abilities both on calibration and biological sample. The experiments were carried on a gated STED microscope based on a STED beam operating in continuous-wave (CW), although the fast-gated SPAD is fully compatible with gated STED implementations based on pulsed STED beams. PMID:26114044

  8. Smart gating membranes with in situ self-assembled responsive nanogels as functional gates

    PubMed Central

    Luo, Feng; Xie, Rui; Liu, Zhuang; Ju, Xiao-Jie; Wang, Wei; Lin, Shuo; Chu, Liang-Yin

    2015-01-01

    Smart gating membranes, inspired by the gating function of ion channels across cell membranes, are artificial membranes composed of non-responsive porous membrane substrates and responsive gates in the membrane pores that are able to dramatically regulate the trans-membrane transport of substances in response to environmental stimuli. Easy fabrication, high flux, significant response and strong mechanical strength are critical for the versatility of such smart gating membranes. Here we show a novel and simple strategy for one-step fabrication of smart gating membranes with three-dimensionally interconnected networks of functional gates, by self-assembling responsive nanogels on membrane pore surfaces in situ during a vapor-induced phase separation process for membrane formation. The smart gating membranes with in situ self-assembled responsive nanogels as functional gates show large flux, significant response and excellent mechanical property simultaneously. Because of the easy fabrication method as well as the concurrent enhancement of flux, response and mechanical property, the proposed smart gating membranes will expand the scope of membrane applications, and provide ever better performances in their applications. PMID:26434387

  9. Multipulse interferometric frequency-resolved optical gating

    SciTech Connect

    Siders, C.W.; Siders, J.L.W.; Omenetto, F.G.; Taylor, A.J.

    1999-04-01

    The authors review multipulse interferometric frequency-resolved optical gating (MI-FROG) as a technique, uniquely suited for pump-probe coherent spectroscopy using amplified visible and near-infrared short-pulse systems and/or emissive targets, for time-resolving ultrafast phase shifts and intensity changes. Application of polarization-gate MI-FROG to the study of ultrafast ionization in gases is presented.

  10. GaTe semiconductor for radiation detection

    DOEpatents

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  11. Modulation of CFTR gating by permeant ions

    PubMed Central

    Yeh, Han-I; Yeh, Jiunn-Tyng

    2015-01-01

    Cystic fibrosis transmembrane conductance regulator (CFTR) is unique among ion channels in that after its phosphorylation by protein kinase A (PKA), its ATP-dependent gating violates microscopic reversibility caused by the intimate involvement of ATP hydrolysis in controlling channel closure. Recent studies suggest a gating model featuring an energetic coupling between opening and closing of the gate in CFTR’s transmembrane domains and association and dissociation of its two nucleotide-binding domains (NBDs). We found that permeant ions such as nitrate can increase the open probability (Po) of wild-type (WT) CFTR by increasing the opening rate and decreasing the closing rate. Nearly identical effects were seen with a construct in which activity does not require phosphorylation of the regulatory domain, indicating that nitrate primarily affects ATP-dependent gating steps rather than PKA-dependent phosphorylation. Surprisingly, the effects of nitrate on CFTR gating are remarkably similar to those of VX-770 (N-(2,4-Di-tert-butyl-5-hydroxyphenyl)-4-oxo-1,4-dihydroquinoline-3-carboxamide), a potent CFTR potentiator used in clinics. These include effects on single-channel kinetics of WT CFTR, deceleration of the nonhydrolytic closing rate, and potentiation of the Po of the disease-associated mutant G551D. In addition, both VX-770 and nitrate increased the activity of a CFTR construct lacking NBD2 (ΔNBD2), indicating that these gating effects are independent of NBD dimerization. Nonetheless, whereas VX-770 is equally effective when applied from either side of the membrane, nitrate potentiates gating mainly from the cytoplasmic side, implicating a common mechanism for gating modulation mediated through two separate sites of action. PMID:25512598

  12. Modulation of CFTR gating by permeant ions.

    PubMed

    Yeh, Han-I; Yeh, Jiunn-Tyng; Hwang, Tzyh-Chang

    2015-01-01

    Cystic fibrosis transmembrane conductance regulator (CFTR) is unique among ion channels in that after its phosphorylation by protein kinase A (PKA), its ATP-dependent gating violates microscopic reversibility caused by the intimate involvement of ATP hydrolysis in controlling channel closure. Recent studies suggest a gating model featuring an energetic coupling between opening and closing of the gate in CFTR's transmembrane domains and association and dissociation of its two nucleotide-binding domains (NBDs). We found that permeant ions such as nitrate can increase the open probability (Po) of wild-type (WT) CFTR by increasing the opening rate and decreasing the closing rate. Nearly identical effects were seen with a construct in which activity does not require phosphorylation of the regulatory domain, indicating that nitrate primarily affects ATP-dependent gating steps rather than PKA-dependent phosphorylation. Surprisingly, the effects of nitrate on CFTR gating are remarkably similar to those of VX-770 (N-(2,4-Di-tert-butyl-5-hydroxyphenyl)-4-oxo-1,4-dihydroquinoline-3-carboxamide), a potent CFTR potentiator used in clinics. These include effects on single-channel kinetics of WT CFTR, deceleration of the nonhydrolytic closing rate, and potentiation of the Po of the disease-associated mutant G551D. In addition, both VX-770 and nitrate increased the activity of a CFTR construct lacking NBD2 (ΔNBD2), indicating that these gating effects are independent of NBD dimerization. Nonetheless, whereas VX-770 is equally effective when applied from either side of the membrane, nitrate potentiates gating mainly from the cytoplasmic side, implicating a common mechanism for gating modulation mediated through two separate sites of action. PMID:25512598

  13. Gate fidelity fluctuations and quantum process invariants

    SciTech Connect

    Magesan, Easwar; Emerson, Joseph; Blume-Kohout, Robin

    2011-07-15

    We characterize the quantum gate fidelity in a state-independent manner by giving an explicit expression for its variance. The method we provide can be extended to calculate all higher order moments of the gate fidelity. Using these results, we obtain a simple expression for the variance of a single-qubit system and deduce the asymptotic behavior for large-dimensional quantum systems. Applications of these results to quantum chaos and randomized benchmarking are discussed.

  14. Boolean gates on actin filaments

    NASA Astrophysics Data System (ADS)

    Siccardi, Stefano; Tuszynski, Jack A.; Adamatzky, Andrew

    2016-01-01

    Actin is a globular protein which forms long polar filaments in the eukaryotic cytoskeleton. Actin networks play a key role in cell mechanics and cell motility. They have also been implicated in information transmission and processing, memory and learning in neuronal cells. The actin filaments have been shown to support propagation of voltage pulses. Here we apply a coupled nonlinear transmission line model of actin filaments to study interactions between voltage pulses. To represent digital information we assign a logical TRUTH value to the presence of a voltage pulse in a given location of the actin filament, and FALSE to the pulse's absence, so that information flows along the filament with pulse transmission. When two pulses, representing Boolean values of input variables, interact, then they can facilitate or inhibit further propagation of each other. We explore this phenomenon to construct Boolean logical gates and a one-bit half-adder with interacting voltage pulses. We discuss implications of these findings on cellular process and technological applications.

  15. Range gated strip proximity sensor

    DOEpatents

    McEwan, T.E.

    1996-12-03

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance. 6 figs.

  16. Range gated strip proximity sensor

    DOEpatents

    McEwan, Thomas E.

    1996-01-01

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance.

  17. Crystalline silicotitanate gate review analysis

    SciTech Connect

    Schlahta, S.N.; Carreon, R.; Gentilucci, J.A.

    1997-11-01

    Crystalline silicotitanate (CST) is an ion-exchange method for removing radioactive cesium from tank waste to allow the separation of the waste into high- and low-level fractions. The CST, originally developed Sandia National Laboratories personnel in association with Union Oil Products Corporation, has both a high affinity and selectivity for sorbing cesium-137 from highly alkaline or acidic solutions. For several years now, the U.S. Department of Energy has funded work to investigate applying CST to large-scale removal of cesium-137 from radioactive tank wastes. In January 1997, an expert panel sponsored by the Tanks Focus Area met to review the current state of the technology and to determine whether it was ready for routine use. The review also sought to identify any technical issues that must be resolved or additional CST development that must occur before full implementation by end-users. The CST Gate Review Group concluded that sufficient work has been done to close developmental work on CST and turn the remaining site-specific tasks over to the users. This report documents the review group`s findings, issues, concerns, and recommendations as well as responses from the Tanks Focus Area expert staff to specific pretreatment and immobilization issues.

  18. Gramicidin Channels Are Internally Gated

    PubMed Central

    Jones, Tyson L.; Fu, Riqiang; Nielson, Frederick; Cross, Timothy A.; Busath, David D.

    2010-01-01

    Abstract Gramicidin channels are archetypal molecular subjects for solid-state NMR studies and investigations of single-channel or cation conductance. Until now, the transitions between on and off conductance states have been thought, based on multichannel studies, to represent monomer ↔ dimer reactions. Here we use a single-molecule deposition method (vesicle fusion to a planar bilayer) to show that gramicidin dimer channels do not normally dissociate when conductance terminates. Furthermore, the observation of two 13C peaks in solid-state NMR indicates very stable dichotomous conformations for both the first and second peptide bonds in the monomers, and a two-dimensional chemical exchange spectrum with a 12-s mixing time demonstrates that the Val1 carbonyl conformations exchange slowly, with lifetimes of several seconds. It is proposed that gramicidin channels are gated by small conformational changes in the channel near the permeation pathway. These studies demonstrate how regulation of conformations governing closed ↔ open transitions may be achieved and studied at the molecular level. PMID:20409467

  19. Sensory gating deficits in parents of schizophrenics

    SciTech Connect

    Waldo, M.; Madison, A.; Freedman, R.

    1995-12-18

    Although schizophrenia clusters in families, it is not inherited in Mendelian fashion. This suggests that there may be alternative phenotypic expressions of genes that convey risk for schizophrenia, such as more elementary physiological or biochemical defects. One proposed phenotype is impaired inhibitory gating of the auditory evoked potential to repeated stimuli. Normally, the amplitude of the P50 response to the second stimulus is significantly less than the response to the first, but this gating of response is generally impaired in schizophrenia. Clinically unaffected individuals within a pedigree who have both an ancestral and descendant history of schizophrenia may be useful for studying whether this physiological defect is a possible alternative phenotype. We have studied inhibitory gating of the auditory P50 response to pairs of auditory stimuli in 17 nuclear families. In 11, there was one parent who had another relative with a chronic psychotic illness, in addition to the schizophrenic proband. AR of the parents with family histories of schizophrenia had gating of the P50 response similar to their schizophrenia offspring, whereas only 7% of the parents without family history had gating of the P50 response in the abnormal range. These results support loss of gating of the auditory P50 wave as an inherited deficit related to schizophrenia and suggest that studies of parents may help elucidate the neurobiological expression of genes that convey risk for schizophrenia. 36 refs., 2 figs., 2 tabs.

  20. Shielded silicon gate complementary MOS integrated circuit.

    NASA Technical Reports Server (NTRS)

    Lin, H. C.; Halsor, J. L.; Hayes, P. J.

    1972-01-01

    An electrostatic shield for complementary MOS integrated circuits was developed to minimize the adverse effects of stray electric fields created by the potentials in the metal interconnections. The process is compatible with silicon gate technology. N-doped polycrystalline silicon was used for all the gates and the shield. The effectiveness of the shield was demonstrated by constructing a special field plate over certain transistors. The threshold voltages obtained on an oriented silicon substrate ranged from 1.5 to 3 V for either channel. Integrated inverters performed satisfactorily from 3 to 15 V, limited at the low end by the threshold voltages and at the high end by the drain breakdown voltage of the n-channel transistors. The stability of the new structure with an n-doped silicon gate as measured by the shift in C-V curve under 200 C plus or minus 20 V temperature-bias conditions was better than conventional aluminum gate or p-doped silicon gate devices, presumably due to the doping of gate oxide with phosphorous.

  1. Gated entry into the ciliary compartment.

    PubMed

    Takao, Daisuke; Verhey, Kristen J

    2016-01-01

    Cilia and flagella play important roles in cell motility and cell signaling. These functions require that the cilium establishes and maintains a unique lipid and protein composition. Recent work indicates that a specialized region at the base of the cilium, the transition zone, serves as both a barrier to entry and a gate for passage of select components. For at least some cytosolic proteins, the barrier and gate functions are provided by a ciliary pore complex (CPC) that shares molecular and mechanistic properties with nuclear gating. Specifically, nucleoporins of the CPC limit the diffusional entry of cytosolic proteins in a size-dependent manner and enable the active transport of large molecules and complexes via targeting signals, importins, and the small G protein Ran. For membrane proteins, the septin protein SEPT2 is part of the barrier to entry whereas the gating function is carried out and/or regulated by proteins associated with ciliary diseases (ciliopathies) such as nephronophthisis, Meckel–Gruber syndrome and Joubert syndrome. Here, we discuss the evidence behind these models of ciliary gating as well as the similarities to and differences from nuclear gating. PMID:26472341

  2. Radiation-Insensitive Inverse Majority Gates

    NASA Technical Reports Server (NTRS)

    Manohara, Harish; Mojarradi, Mohammad

    2008-01-01

    To help satisfy a need for high-density logic circuits insensitive to radiation, it has been proposed to realize inverse majority gates as microscopic vacuum electronic devices. In comparison with solid-state electronic devices ordinarily used in logic circuits, vacuum electronic devices are inherently much less adversely affected by radiation and extreme temperatures. The proposed development would involve state-of-the-art micromachining and recent advances in the fabrication of carbon-nanotube-based field emitters. A representative three-input inverse majority gate would be a monolithic, integrated structure that would include three gate electrodes, six bundles of carbon nanotubes (serving as electron emitters) at suitable positions between the gate electrodes, and an overhanging anode. The bundles of carbon nanotubes would be grown on degenerately doped silicon substrates that would be parts of the monolithic structure. The gate electrodes would be fabricated as parts of the monolithic structure by means of a double-silicon-on-insulator process developed at NASA's Jet Propulsion Laboratory. The tops of the bundles of carbon nanotubes would lie below the plane of the tops of the gate electrodes. The particular choice of shapes, dimensions, and relative positions of the electrodes and bundles of carbon nanotubes would provide for both field emission of electrons from the bundles of carbon nanotubes and control of the electron current to obtain the inverse majority function, which is described in the paper.

  3. The gating isomerization of neuromuscular acetylcholine receptors

    PubMed Central

    Auerbach, Anthony

    2010-01-01

    Acetylcholine receptor-channels are allosteric proteins that isomerize (‘gate’) between conformations that have a low vs. high affinity for the transmitter and conductance for ions. In order to comprehend the mechanism by which the affinity and conductance changes are linked it is of value to know the magnitude, timing and distribution of energy flowing through the system. Knowing both the di- and unliganded gating equilibrium constants (E2 and E0) is a foundation for understanding the AChR gating mechanism and for engineering both the ligand and the protein to operate in predictable ways. In adult mouse neuromuscular receptors activated by acetylcholine, E2= 28 and E0≈ 6.5 × 10−7. At each (equivalent) transmitter binding site acetylcholine provides ∼5.2 kcal mol−1 to motivate the isomerization. The partial agonist choline provides ∼3.3 kcal mol−1. The relative time of a residue's gating energy change is revealed by the slope of its rate–equilibrium constant relationship. A map of this parameter suggests that energy propagates as a conformational cascade between the transmitter binding sites and the gate region. Although gating energy changes are widespread throughout the protein, some residues are particularly sensitive to perturbations. Several specific proposals for the structural events that comprise the gating conformational cascade are discussed. PMID:19933754

  4. Gate-set tomography and beyond

    NASA Astrophysics Data System (ADS)

    Blume-Kohout, Robin

    Four years ago, there was no reliable way to characterize and debug quantum gates. Process tomography required perfectly pre-calibrated gates, while randomized benchmarking only yielded an overall error rate. Gate-set tomography (GST) emerged around 2012-13 in several variants (most notably at IBM; see PRA 87, 062119) to address this need, providing complete and calibration-free characterization of gates. At Sandia, we have pushed the capabilities of GST well beyond these initial goals. In this talk, I'll demonstrate our open web interface, show how we characterize gates with accuracy at the Heisenberg limit, discuss how we put error bars on the results, and present experimental GST estimates with 1e-5 error bars. I'll also present preliminary results of GST on 2-qubit gates, including a brief survey of the tricks we use to make it possible. I'll conclude with an analysis of GST's limitations (e.g., it scales poorly), and the techniques under development for characterizing and debugging larger (3+ qubit) systems.

  5. The Pan-African high-K calc-alkaline peraluminous Elat granite from southern Israel: geology, geochemistry and petrogenesis

    NASA Astrophysics Data System (ADS)

    Eyal, M.; Litvinovsky, B. A.; Katzir, Y.; Zanvilevich, A. N.

    2004-10-01

    Calc-alkaline leucocratic granites that were emplaced at the late post-collision stage of the Pan-African orogeny are abundant in the northern half of the Arabian-Nubian Shield. Commonly, they are referred to as the Younger Granite II suite. In southern Israel such rocks are known as Elat granite. Studies of these rocks enable to recognize two types of granites: coarse-grained, massive Elat granite (EG), and fine- to medium-grained Shahmon gneissic granite (SGG). Both granite types are high-K and peraluminous ( ASI ranges from 1.03 to 1.16). They are similar in modal composition, mineral and whole-rock chemistry. Within the EG, a noticeable distinction in whole-rock chemistry and mineral composition is observed between rocks making up different plutons. In particular, the granite of Wadi Shelomo, as compared to the Rehavam pluton, is enriched in SiO 2, FeO∗, K 2O, Ba, Zr, Th, LREE and impoverished in MgO, Na 2O, Sr, and HREE. The Eu/Eu∗ values in the granite are low, up to 0.44. Mass-balance calculations suggest that chemical and mineralogical variations were caused by fractionation of ˜16 wt.% plagioclase from the parental Rehavam granite magma at temperature of 760-800 °C (muscovite-biotite geothermometer). The Rb-Sr isochrons yielded a date of 623 ± 24 Ma for the EG, although high value of age-error does not allow to constrain time of emplacement properly. The Rb-Sr date for SGG is 640 ± 9 Ma; however, it is likely that this date points to the time of metamorphism. A survey of the literature shows that peraluminous, high-K granites, similar to the EG, are abundant among the Younger Granite II plutons in the Sinai Peninsula and Eastern Desert, Egypt. They were emplaced at the end of the batholithic (late post-collision) stage. The most appropriate model for the generation of the peraluminous granitic magma is partial melting of metapelite and metagreywacke.

  6. Cardiac gating with a pulse oximeter for dual-energy imaging

    NASA Astrophysics Data System (ADS)

    Shkumat, N. A.; Siewerdsen, J. H.; Dhanantwari, A. C.; Williams, D. B.; Paul, N. S.; Yorkston, J.; Van Metter, R.

    2008-11-01

    The development and evaluation of a prototype cardiac gating system for double-shot dual-energy (DE) imaging is described. By acquiring both low- and high-kVp images during the resting phase of the cardiac cycle (diastole), heart misalignment between images can be reduced, thereby decreasing the magnitude of cardiac motion artifacts. For this initial implementation, a fingertip pulse oximeter was employed to measure the peripheral pulse waveform ('plethysmogram'), offering potential logistic, cost and workflow advantages compared to an electrocardiogram. A gating method was developed that accommodates temporal delays due to physiological pulse propagation, oximeter waveform processing and the imaging system (software, filter-wheel, anti-scatter Bucky-grid and flat-panel detector). Modeling the diastolic period allowed the calculation of an implemented delay, timp, required to trigger correctly during diastole at any patient heart rate (HR). The model suggests a triggering scheme characterized by two HR regimes, separated by a threshold, HRthresh. For rates at or below HRthresh, sufficient time exists to expose on the same heartbeat as the plethysmogram pulse [timp(HR) = 0]. Above HRthresh, a characteristic timp(HR) delays exposure to the subsequent heartbeat, accounting for all fixed and variable system delays. Performance was evaluated in terms of accuracy and precision of diastole-trigger coincidence and quantitative evaluation of artifact severity in gated and ungated DE images. Initial implementation indicated 85% accuracy in diastole-trigger coincidence. Through the identification of an improved HR estimation method (modified temporal smoothing of the oximeter waveform), trigger accuracy of 100% could be achieved with improved precision. To quantify the effect of the gating system on DE image quality, human observer tests were conducted to measure the magnitude of cardiac artifact under conditions of successful and unsuccessful diastolic gating. Six observers

  7. Cardiac gating with a pulse oximeter for dual-energy imaging.

    PubMed

    Shkumat, N A; Siewerdsen, J H; Dhanantwari, A C; Williams, D B; Paul, N S; Yorkston, J; Van Metter, R

    2008-11-01

    The development and evaluation of a prototype cardiac gating system for double-shot dual-energy (DE) imaging is described. By acquiring both low- and high-kVp images during the resting phase of the cardiac cycle (diastole), heart misalignment between images can be reduced, thereby decreasing the magnitude of cardiac motion artifacts. For this initial implementation, a fingertip pulse oximeter was employed to measure the peripheral pulse waveform ('plethysmogram'), offering potential logistic, cost and workflow advantages compared to an electrocardiogram. A gating method was developed that accommodates temporal delays due to physiological pulse propagation, oximeter waveform processing and the imaging system (software, filter-wheel, anti-scatter Bucky-grid and flat-panel detector). Modeling the diastolic period allowed the calculation of an implemented delay, t(imp), required to trigger correctly during diastole at any patient heart rate (HR). The model suggests a triggering scheme characterized by two HR regimes, separated by a threshold, HR(thresh). For rates at or below HR(thresh), sufficient time exists to expose on the same heartbeat as the plethysmogram pulse [t(imp)(HR) = 0]. Above HR(thresh), a characteristic t(imp)(HR) delays exposure to the subsequent heartbeat, accounting for all fixed and variable system delays. Performance was evaluated in terms of accuracy and precision of diastole-trigger coincidence and quantitative evaluation of artifact severity in gated and ungated DE images. Initial implementation indicated 85% accuracy in diastole-trigger coincidence. Through the identification of an improved HR estimation method (modified temporal smoothing of the oximeter waveform), trigger accuracy of 100% could be achieved with improved precision. To quantify the effect of the gating system on DE image quality, human observer tests were conducted to measure the magnitude of cardiac artifact under conditions of successful and unsuccessful diastolic gating

  8. Polaron-electron assisted giant dielectric dispersion in SrZrO3 high-k dielectric

    NASA Astrophysics Data System (ADS)

    Borkar, Hitesh; Barvat, Arun; Pal, Prabir; Shukla, A. K.; Pulikkotil, J. J.; Kumar, Ashok

    2016-06-01

    The SrZrO3 is a well known high-k dielectric constant (˜22) and high optical bandgap (˜5.8 eV) material and one of the potential candidates for future generation nanoelectronic logic elements (8 nm node technology) beyond silicon. Its dielectric behavior is fairly robust and frequency independent till 470 K; however, it suffers a strong small-polaron based electronic phase transition (Te) linking 650 to 750 K. The impedance spectroscopy measurements revealed the presence of conducting grains and grain boundaries at elevated temperature which provide energetic mobile charge carriers with activation energy in the range of 0.7 to 1.2 eV supporting the oxygen ions and proton conduction. X-ray photoemission spectroscopy measurements suggest the presence of weak non-stoichiometric O2- anions and hydroxyl species bound to different sites at the surface and bulk. These thermally activated charge carriers at elevated temperature significantly contribute to the polaronic based dielectric anomaly and conductivity. Our dielectric anomaly supports pseudo phase transition due to high degree of change in ZrO6 octahedral angle in the temperature range of 650-750 K, where electron density and phonon vibration affect the dielectric and conductivity properties.

  9. Tb{sub 2}O{sub 3} thin films: An alternative candidate for high-k dielectric applications

    SciTech Connect

    Gray, Nathan W.; Prestgard, Megan C.; Tiwari, Ashutosh

    2014-12-01

    We are reporting the growth and structural, optical, and dielectric properties of Tb{sub 2}O{sub 3}, a relatively unexplored high-k dielectric material. A pulsed-laser deposition technique was used to grow Tb{sub 2}O{sub 3} thin-films on four different substrates: Si(100), SrTiO{sub 3}(100), LaAlO{sub 3}(100), and MgO(100). High-resolution X-ray diffraction and transmission electron microscopy results confirmed that film growth in an oxygen-rich (10{sup −1 }Torr) environment yields nearly single-crystal C-phase films, while a low-oxygen (10{sup −6 }Torr) environment growth results in the formation of monoclinic polycrystalline B-phase films. Optical transmission measurements showed that the bandgap of Tb{sub 2}O{sub 3} is direct in nature with a value of 2.8 eV and 3.4 eV for the cubic and monoclinic phases, respectively. By measuring the capacitance of test devices, quite high dielectric constants of 13.5 and 24.9 were obtained for the B- and C-phase Tb{sub 2}O{sub 3} films, respectively.

  10. Structural and electrical characteristics of RF-sputtered HfO 2 high-k based MOS capacitors

    NASA Astrophysics Data System (ADS)

    Tirmali, P. M.; Khairnar, Anil G.; Joshi, Bhavana N.; Mahajan, A. M.

    2011-08-01

    The HfO 2 high-k thin films have been deposited on p-type (1 0 0) silicon wafer using RF magnetron sputtering technique. The XRD, AFM and Ellipsometric characterizations have been performed for crystal structure, surface morphology and thickness measurements respectively. The monoclinic structured, smooth surface HfO 2 thin films with 9.45 nm thickness have been used for Al/HfO 2/p-Si metal-oxide-semiconductor (MOS) structures fabrication. The fabricated Al/HfO2/Si structure have been used for extracting electrical properties viz dielectric constant, EOT, barrier height, doping concentration and interface trap density through capacitance voltage and current-voltage measurements. The dielectric constant, EOT, barrier height, effective charge carriers, interface trap density and leakage current density are determined are 22.47, 1.64 nm, 1.28 eV, 0.93 × 10 10, 9.25 × 10 11 cm -2 eV -1 and 9.12 × 10 -6 A/cm 2 respectively for annealed HfO 2 thin films.

  11. A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

    NASA Astrophysics Data System (ADS)

    Maity, Niladri Pratap; Maity, Reshmi; Thapa, R. K.; Baishya, Srimanta

    2016-07-01

    In this paper, an analytical model for evaluation of tunneling current density of ultra thin MOS devices is presented. The impacts of the promising high-k dielectric material, HfO2 on the current density model have been carried out. In this work, improvement in the results is brought in by taking into account the barrier height lowering due to the image force effect. The considered voltage range is from 0 to ψ1/e i.e., 0 < V < ψ1/e, where ψ1 is the barrier height at the interface of metal and the oxide. Initially we are neglecting the image force effect for a MOS device consisting asymmetric barrier. Later, image force effect of ultra thin oxide layer has been introduced for practical potential barrier by superimposing the potential barrier on the trapezoidal barrier. Theoretical predictions are compared with the results obtained by the 2-D numerical device simulator ATLAS and published experimental results. Excellent agreements among the three are observed.

  12. Geology and 40Ar/39Ar geochronology of the medium- to high-K Tanaga volcanic cluster, western Aleutians

    USGS Publications Warehouse

    Jicha, Brian R.; Coombs, Michelle L.; Calvert, Andrew T.; Singer, Brad S.

    2012-01-01

    We used geologic mapping and geochemical data augmented by 40Ar/39Ar dating to establish an eruptive chronology for the Tanaga volcanic cluster in the western Aleutian arc. The Tanaga volcanic cluster is unique in comparison to other central and western Aleutian volcanoes in that it consists of three closely spaced, active, volumetrically significant edifices (Sajaka, Tanaga, and Takawangha), the eruptive products of which have unusually high K2O contents. Thirty-five new 40Ar/39Ar ages obtained in two different laboratories constrain the duration of Pleistocene–Holocene subaerial volcanism to younger than 295 ka. The eruptive activity has been mostly continuous for the last 150 k.y., unlike most other well-characterized arc volcanoes, which tend to grow in discrete pulses. More than half of the analyzed Tanaga volcanic cluster lavas are basalts that have erupted throughout the lifetime of the cluster, although a considerable amount of basaltic andesite and basaltic trachyandesite has also been produced since 200 ka. Major- and trace-element variations suggest that magmas from Sajaka and Tanaga volcanoes are likely to have crystallized pyroxene and/or amphibole at greater depths than the older Takawangha magmas, which experienced a larger percentage of plagioclase-dominated fractionation at shallower depths. Magma output from Takawangha has declined over the last 86 k.y. At ca. 19 ka, the focus of magma flux shifted to the west beneath Tanaga and Sajaka volcanoes, where hotter, more mafic magma erupted.

  13. Thermodynamics and kinetic behaviors of thickness-dependent crystallization in high-k thin films deposited by atomic layer deposition

    SciTech Connect

    Nie, Xianglong; Ma, Fei; Ma, Dayan; Xu, Kewei

    2015-01-15

    Atomic layer deposition is adopted to prepare HfO{sub 2} and Al{sub 2}O{sub 3} high-k thin films. The HfO{sub 2} thin films are amorphous at the initial growth stage, but become crystallized when the film thickness (h) exceeds a critical value (h{sub critical}{sup *}). This phase transition from amorphous to crystalline is enhanced at higher temperatures and is discussed, taking into account the effect of kinetic energy. At lower temperatures, the amorphous state can be maintained even when h>h{sub critical}{sup *} owing to the small number of activated atoms. However, the number of activated atoms increases with the temperature, allowing crystallization to occur even in films with smaller thickness. The Al{sub 2}O{sub 3} thin films, on the other hand, maintain their amorphous state independent of the film thickness and temperature owing to the limited number of activated atoms. A thermodynamic model is proposed to describe the thickness-dependent phase transition.

  14. Distribution of anomalously high K2O volcanic rocks in Arizona: Metasomatism at the Picacho Peak detachment fault

    NASA Astrophysics Data System (ADS)

    Brooks, William E.

    1986-04-01

    Metasomatized Tertiary lavas with anomalously high K2O and low Na2O content are distributed within the northwest-trending Miocene extensional terrane of southwestern Arizona. These rocks are common near core-complex related detachment faults at Picacho Peak and the Harcuvar Mountains and in listric-faulted terrane at the Vulture Mountains. In addition to systematic changes in K2O and Na2O, the rocks have been enriched in Zr and depleted in MgO. Secondary, introduced minerals include orthoclase, quartz, and calcite. Fine-grained, euhedral orthoclase (var. adularia), from 2 to 10 μm, is the dominant potassium mineral. Metasomatic changes at Picacho Peak are spatially associated with a major detachment fault. Thus, it is interpreted that detachment provided a conduit for hydrothermal fluids that altered the initial chemical composition of the Tertiary volcanics by potassium metasomatism and charged the upper-plate rocks with mineralizing fluids that carried Zr and Ba, along with Au, Ag, and Cu, during detachment 17 18 Ma.

  15. Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

    NASA Astrophysics Data System (ADS)

    Nagaiah, Padmaja

    As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p

  16. Controlled Logic Gates-Switch Gate and Fredkin Gate Based on Enzyme-Biocatalyzed Reactions Realized in Flow Cells.

    PubMed

    Fratto, Brian E; Katz, Evgeny

    2016-04-01

    Controlled logic gates, where the logic operations on the Data inputs are performed in the way determined by the Control signal, were designed in a chemical fashion. Specifically, the systems where the Data output signals directed to various output channels depending on the logic value of the Control input signal have been designed based on enzyme biocatalyzed reactions performed in a multi-cell flow system. In the Switch gate one Data signal was directed to one of two possible output channels depending on the logic value of the Control input signal. In the reversible Fredkin gate the routing of two Data signals between two output channels is controlled by the third Control signal. The flow devices were created using a network of flow cells, each modified with one enzyme that biocatalyzed one chemical reaction. The enzymatic cascade was realized by moving the solution from one reacting cell to another which were organized in a specific network. The modular design of the enzyme-based systems realized in the flow device allowed easy reconfiguration of the logic system, thus allowing simple extension of the logic operation from the 2-input/3-output channels in the Switch gate to the 3-input/3-output channels in the Fredkin gate. Further increase of the system complexity for realization of various logic processes is feasible with the use of the flow cell modular design. PMID:26748763

  17. Gallium arsenide processing for gate array logic

    NASA Technical Reports Server (NTRS)

    Cole, Eric D.

    1989-01-01

    The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

  18. Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO{sub 2}/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside

    SciTech Connect

    Toyoda, S.; Kumigashira, H.; Oshima, M.; Kamada, H.; Tanimura, T.; Ohtsuka, T.; Hata, Y.; Niwa, M.

    2010-01-25

    We have investigated annealing effects on in-depth profile and band discontinuity for a metal gate/high-k gate stack structure on a Si substrate using backside angle-resolved photoemission spectroscopy with synchrotron radiation. In-depth profiles analyzed from angle-resolved photoemission spectroscopy show that La atoms diffuse through the HfSiO layer and reach interfacial SiO{sub 2} layers by rapid thermal annealing. Chemical shift of Si 2p core-level spectra suggests that there are changes in the band discontinuity at the high-k/SiO{sub 2} interface, which is well related to the V{sub th} shift based on the interface dipole model.

  19. AutoGate: fast and automatic Doppler gate localization in B-mode echocardiogram.

    PubMed

    Park, JinHyeong; Zhou, S Kevin; Simopoulos, Costas; Comaniciu, Dorin

    2008-01-01

    In this paper, we propose an algorithm for fast and automatic Doppler gate localization in spectral Doppler echocardiography using the B-mode image information. The algorithm has two components: 1) cardiac standard view classification and 2) gate location inference. For cardiac view classification, we incorporate the probabilistic boosting network (PBN) principle to local-structure-dependent object classification, which speeds up the processing time as it breaks down the computational dependency on the number of classes. The gate location is computed using a data-driven shape inference approach. Clinical evaluation was performed by implementing the algorithm on an ultrasound system. Experiment results show that the performance of the proposed algorithm is comparable to the Doppler gate placement by an expert user. To the best of our knowledge, this is the first algorithm that provides a real time solution to the automated Doppler gate placement in the clinical environment. PMID:18982610

  20. Medium Energy Ion Scattering Study of Oxygen Diffusion-Reactions in High-k Dielectrics on Si

    NASA Astrophysics Data System (ADS)

    Goncharova, Lyudmila; Bersuker, Gennadi

    2005-03-01

    Understanding the thermodynamics and kinetics of film growth during fabrication of high-κ gate stacks is vital to establish atomic level control of interfacial layers and to minimize defects. Annealing such films in different atmospheres may lead to diffusion and reactions with significant consequences on the electrical properties. We have used high-resolution medium energy ion scattering in combination with isotope tracing to investigate oxygen transport in model systems, including Hf and Ce oxides. The reaction of oxygen (pO2=10-2 Torr) with HfO2(SiO2)x/Si films at 500^oC was dominated by oxygen isotopic exchange (not SiO2 interfacial growth). The oxygen exchange rate decreases with an increase of SiO2 fraction in Hf silicate films and is almost fully suppressed (at 500^oC) for a (HfO2):(SiO2)=1:1 film composition. This reaction saturated with time and appeared to be enhanced after film recrystallization. Annealing in a nitrogen-containing atmosphere result in reduced O^18 incorporation and exchange. In comparison to Hf dielectrics, Ce silicates exhibit rapid interface growth upon oxygen exposure. Incorporating nitrogen into the structure lowers the rate of subsequent oxygen diffusion and incorporation.

  1. Sliding-gate valve for use with abrasive materials

    DOEpatents

    Ayers, Jr., William J.; Carter, Charles R.; Griffith, Richard A.; Loomis, Richard B.; Notestein, John E.

    1985-01-01

    The invention is a flow and pressure-sealing valve for use with abrasive solids. The valve embodies special features which provide for long, reliable operating lifetimes in solids-handling service. The valve includes upper and lower transversely slidable gates, contained in separate chambers. The upper gate provides a solids-flow control function, whereas the lower gate provides a pressure-sealing function. The lower gate is supported by means for (a) lifting that gate into sealing engagement with its seat when the gate is in its open and closed positions and (b) lowering the gate out of contact with its seat to permit abrasion-free transit of the gate between its open and closed positions. When closed, the upper gate isolates the lower gate from the solids. Because of this shielding action, the sealing surface of the lower gate is not exposed to solids during transit or when it is being lifted or lowered. The chamber containing the lower gate normally is pressurized slightly, and a sweep gas is directed inwardly across the lower-gate sealing surface during the vertical translation of the gate.

  2. BK channels: multiple sensors, one activation gate.

    PubMed

    Yang, Huanghe; Zhang, Guohui; Cui, Jianmin

    2015-01-01

    Ion transport across cell membranes is essential to cell communication and signaling. Passive ion transport is mediated by ion channels, membrane proteins that create ion conducting pores across cell membrane to allow ion flux down electrochemical gradient. Under physiological conditions, majority of ion channel pores are not constitutively open. Instead, structural region(s) within these pores breaks the continuity of the aqueous ion pathway, thereby serves as activation gate(s) to control ions flow in and out. To achieve spatially and temporally regulated ion flux in cells, many ion channels have evolved sensors to detect various environmental stimuli or the metabolic states of the cell and trigger global conformational changes, thereby dynamically operate the opening and closing of their activation gate. The sensors of ion channels can be broadly categorized as chemical sensors and physical sensors to respond to chemical (such as neural transmitters, nucleotides and ions) and physical (such as voltage, mechanical force and temperature) signals, respectively. With the rapidly growing structural and functional information of different types of ion channels, it is now critical to understand how ion channel sensors dynamically control their gates at molecular and atomic level. The voltage and Ca(2+) activated BK channels, a K(+) channel with an electrical sensor and multiple chemical sensors, provide a unique model system for us to understand how physical and chemical energy synergistically operate its activation gate. PMID:25705194

  3. BK channels: multiple sensors, one activation gate

    PubMed Central

    Yang, Huanghe; Zhang, Guohui; Cui, Jianmin

    2015-01-01

    Ion transport across cell membranes is essential to cell communication and signaling. Passive ion transport is mediated by ion channels, membrane proteins that create ion conducting pores across cell membrane to allow ion flux down electrochemical gradient. Under physiological conditions, majority of ion channel pores are not constitutively open. Instead, structural region(s) within these pores breaks the continuity of the aqueous ion pathway, thereby serves as activation gate(s) to control ions flow in and out. To achieve spatially and temporally regulated ion flux in cells, many ion channels have evolved sensors to detect various environmental stimuli or the metabolic states of the cell and trigger global conformational changes, thereby dynamically operate the opening and closing of their activation gate. The sensors of ion channels can be broadly categorized as chemical sensors and physical sensors to respond to chemical (such as neural transmitters, nucleotides and ions) and physical (such as voltage, mechanical force and temperature) signals, respectively. With the rapidly growing structural and functional information of different types of ion channels, it is now critical to understand how ion channel sensors dynamically control their gates at molecular and atomic level. The voltage and Ca2+ activated BK channels, a K+ channel with an electrical sensor and multiple chemical sensors, provide a unique model system for us to understand how physical and chemical energy synergistically operate its activation gate. PMID:25705194

  4. Noisy signaling through promoter logic gates

    NASA Astrophysics Data System (ADS)

    Gerstung, Moritz; Timmer, Jens; Fleck, Christian

    2009-01-01

    We study the influence of noisy transcription factor signals on cis-regulatory promoter elements. These elements process the probability of binary binding events analogous to computer logic gates. At equilibrium, this probability is given by the so-called input function. We show that transcription factor noise causes deviations from the equilibrium value due to the nonlinearity of the input function. For a single binding site, the correction is always negative resulting in an occupancy below the mean-field level. Yet for more complex promoters it depends on the correlation of the transcription factor signals and the geometry of the input function. We present explicit solutions for the basic types of AND and OR gates. The correction size varies among these different types of gates and signal types, mainly being larger in AND gates and for correlated fluctuations. In all cases we find excellent agreement between the analytical results and numerical simulations. We also study the E. coli Lac operon as an example of an AND NOR gate. We present a consistent mathematical method that allows one to separate different sources of noise and quantifies their effect on promoter occupation. A surprising result of our analysis is that Poissonian molecular fluctuations, in contrast to external fluctuations, do no contribute to the correction.

  5. Gate dielectric development for flexible electronics

    SciTech Connect

    Joshi, P. C.; Voutsas, A. T.; Hartzell, J. W.

    2007-07-15

    Thin film transistors integrated on flexible substrates are becoming increasingly attractive for low cost displays, sensors, and rf communication applications. The successful development of the flexible devices will be dictated by the enhancement in the thermal stability of the substrates and the low temperature (<300 deg. C) processing of the gate dielectric. The plasma-enhanced chemical-vapor deposition (PECVD) technique has successfully met the demands of the gate dielectric for display devices at processing temperatures lower than 600 deg. C. However, a further reduction in the processing temperatures below 300 deg. C is essential to realize low cost, highly functional devices on flexible substrates. The low temperature processing of gate dielectric films necessitates the development of processes and techniques with plasma controlled reaction kinetics dominating the thin film growth rather than the thermal state of the substrate. In the present work, the authors report on the processing of high quality gate dielectric films by high density PECVD technique at process temperatures lower than 300 deg. C. The bulk and interfacial electrical quality and reliability of the metal-oxide-semiconductor capacitors as a function of process temperature are discussed in this article. A comparison with the high temperature gate oxide films deposited by PECVD technique employing capacitively coupled plasma source has been made to establish the film quality and reliability. The films processed at low temperatures have shown good electrical performance and reliability as evaluated in terms of the leakage current, flatband voltage, midgap interface trap concentration, and bias temperature stress reliability characteristics.

  6. Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics

    SciTech Connect

    Zheng, Shan; Yang, Wen; Sun, Qing-Qing E-mail: linchen@fudan.edu.cn; Zhou, Peng; Wang, Peng-Fei; Wei Zhang, David; Chen, Lin; Xiao, Fei

    2013-12-23

    Fermi level pinning at metal/n-InP interface and effective Schottky barrier height (Φ{sub B,eff}) were optimized by inserting ultrathin dielectrics in this work. Comparing the inserted monolayer and bilayer high-k dielectrics, we demonstrated that the introduction of bilayer dielectrics can further reduce Φ{sub B,eff} (from 0.49 eV to 0.22 eV) than the monolayer dielectric (from 0.49 eV to 0.32 eV) even though the overall dielectric thickness was thicker. The additional dipole formed at high-k/high-k interfaces could be used to expound the mechanism. This work proposed an effective solution to reduce resistance contacts for InP based transistors and Schottky barrier transistors.

  7. Geochemistry and petrogenesis of the late Archaean high-K granites in the southern Musoma-Mara Greenstone Belt: Their influence in evolution of Archaean Tanzania Craton

    NASA Astrophysics Data System (ADS)

    Mshiu, Elisante Elisaimon; Maboko, Makenya A. H.

    2012-05-01

    Musoma-Mara Greenstone Belt (MMGB) is abundantly occupied by the post-orogenic high-K granites which also they mark the end of magmatism in the area. The granites are characterized by high SiO2 and Al2O3 contents that average 74.42% and 13.08% by weight respectively. They have low Na2O content (mean = 3.36 wt.%) and high K2O contents (mean = 4.95 wt.%) which resulted to relatively high K2O/Na2O ratios (mean = 1.50). They also characterized by low Mg# (mean = 33) as well as low contents of transition elements such as Cr and Ni which are below detection limit (<20 ppm). Negative anomalies in Eu (Eu/Eu*, mean = 0.56), Nd, Ta and Ti elements as shown in the chondrite and primitive mantle normalized diagrams indicate MMGB high-K granites originated from a subduction related environments. These high-K granites also characterized by relative enrichment of the LREE compared to HREE as revealed by their high (La/Yb)CN ratio ranging from 8.71 to 50.93 (mean = 26.32). They have relatively flat HREE pattern with (Tb/Yb)CN ratio varying between 0.81 and 2.12 (mean = 1.55). Their linear trend in the variation diagrams of both major and trace elements indicate magmatic differentiation was also an important process during their formation. Conclusively, the geochemical characteristics as well as experimental evidences suggests MMGB high-K granites were formed from partial melting of pre-existing TTG rocks, under low pressure at 15 km depth or less and temperature around 950 °C in which plagioclase minerals were the stable phases in the melt.

  8. Four-gate transistor analog multiplier circuit

    NASA Technical Reports Server (NTRS)

    Mojarradi, Mohammad M. (Inventor); Blalock, Benjamin (Inventor); Cristoloveanu, Sorin (Inventor); Chen, Suheng (Inventor); Akarvardar, Kerem (Inventor)

    2011-01-01

    A differential output analog multiplier circuit utilizing four G.sup.4-FETs, each source connected to a current source. The four G.sup.4-FETs may be grouped into two pairs of two G.sup.4-FETs each, where one pair has its drains connected to a load, and the other par has its drains connected to another load. The differential output voltage is taken at the two loads. In one embodiment, for each G.sup.4-FET, the first and second junction gates are each connected together, where a first input voltage is applied to the front gates of each pair, and a second input voltage is applied to the first junction gates of each pair. Other embodiments are described and claimed.

  9. Active gated imaging for automotive safety applications

    NASA Astrophysics Data System (ADS)

    Grauer, Yoav; Sonn, Ezri

    2015-03-01

    The paper presents the Active Gated Imaging System (AGIS), in relation to the automotive field. AGIS is based on a fast gated-camera equipped with a unique Gated-CMOS sensor, and a pulsed Illuminator, synchronized in the time domain to record images of a certain range of interest which are then processed by computer vision real-time algorithms. In recent years we have learned the system parameters which are most beneficial to night-time driving in terms of; field of view, illumination profile, resolution and processing power. AGIS provides also day-time imaging with additional capabilities, which enhances computer vision safety applications. AGIS provides an excellent candidate for camera-based Advanced Driver Assistance Systems (ADAS) and the path for autonomous driving, in the future, based on its outstanding low/high light-level, harsh weather conditions capabilities and 3D potential growth capabilities.

  10. Majorana fermions in nanowires without gating superconductors

    NASA Astrophysics Data System (ADS)

    Lin, Chien-Hung; Hui, Hoi Yin; Sau, Jay; Das Sarma, Sankar

    2011-03-01

    Majorana fermions have been proposed to be realizable at the end of the semiconductor nanowire on top of an s-wave superconductor [1,2]. These proposals require gating the nanowire directly in contact with a superconductor which may be difficult in experiments. We analyze [1,2] in configurations where the wire is only gated away from the superconductor. We show that some signatures of the Majorana mode remain but the Majorana mode is not localized and hence not suitable for quantum computation. Therefore we propose an 1D periodic heterostructure which can support localized Majorana modes at the end of the wire without gating on the superconductor. This work is supported by DARPA-QuEST, JQI-NSF-PFC, and LPS-NSA.

  11. Respiration gated radiotherapy treatment: a technical study

    NASA Astrophysics Data System (ADS)

    Kubo, Hideo D.; Hill, Bruce C.

    1996-01-01

    In order to optimize external-beam conformal radiotherapy, patient movement during treatment must be minimized. For treatment on the upper torso, the target organs are known to move substantially due to patient respiration. This paper deals with the technical aspects of gating the radiotherapy beam synchronously with respiration: the optimal respiration monitoring system, measurements of organ displacement and linear accelerator gating. Several respiration sensors including a thermistor, a thermocouple, a strain gauge and a pneumotachograph were examined to find the optimal sensor. The magnitude of breast, chest wall and lung motion were determined using playback of fluoroscopic x-ray images recorded on a VCR during routine radiotherapy simulation. Total dose, beam symmetry and beam uniformity were examined to determine any effects on the Varian 2100C linear accelerator due to gating.

  12. Clinically applicable gated cardiac computed tomography

    SciTech Connect

    Cipriano, P.R.; Nassi, M.; Brody, W.R.

    1983-03-01

    Several attempts have been made to improve cardiac images obtained with x-ray transmission computed tomography (CT) by stopping cardiac motion through electrocardiographic gating. These methods reconstruct images that correspond to time intervals of the cardiac cycle identified by electrocardiography using either a pulsed x-ray beam at a selected time in the cardiac cycle or selected measurements in retrospect from regularly pulsed measurements made over several cardiac cycles. Missing CT angles of view (line integrals) have been a major problem contributing to degradation of such gated cardiac CT images. A new method for CT reconstruction from an incomplete set of projection data is presented that can be used clinically with a standard fan-beam reconstruction algorithm to improve gated cardiac CT images.

  13. The airport gate assignment problem: a survey.

    PubMed

    Bouras, Abdelghani; Ghaleb, Mageed A; Suryahatmaja, Umar S; Salem, Ahmed M

    2014-01-01

    The airport gate assignment problem (AGAP) is one of the most important problems operations managers face daily. Many researches have been done to solve this problem and tackle its complexity. The objective of the task is assigning each flight (aircraft) to an available gate while maximizing both conveniences to passengers and the operational efficiency of airport. This objective requires a solution that provides the ability to change and update the gate assignment data on a real time basis. In this paper, we survey the state of the art of these problems and the various methods to obtain the solution. Our survey covers both theoretical and real AGAP with the description of mathematical formulations and resolution methods such as exact algorithms, heuristic algorithms, and metaheuristic algorithms. We also provide a research trend that can inspire researchers about new problems in this area. PMID:25506074

  14. Robust Microcompartments with Hydrophobically Gated Shells.

    PubMed

    Sander, Jonathan S; Steinacher, Mathias; Loiseau, Eve; Demirörs, Ahmet F; Zanini, Michele; Isa, Lucio; Studart, André R

    2015-06-30

    We report on robust synthetic microcompartments with hydrophobically gated shells that can reversibly swell and contract multiple times upon external stimuli. The gating mechanism relies on a hydrophilic-hydrophobic transition of a polymer layer that is grafted on inorganic colloidosomes using atom-transfer radical polymerization. As a result of such a transition, the initially tight hydrophobic shell becomes permeable to the diffusion of hydrophilic solutes across the microcompartment walls. Surprisingly, the microcompartments are strong enough to retain their spherical shape during several swelling and contraction cycles. This provides a powerful alternative platform for the creation of synthetic microreactors and protocells that interact with the surrounding media through a simple gating mechanism and are sufficiently robust for further engineering of increasingly complex compartmentalized structures. PMID:26061672

  15. The Airport Gate Assignment Problem: A Survey

    PubMed Central

    Ghaleb, Mageed A.; Salem, Ahmed M.

    2014-01-01

    The airport gate assignment problem (AGAP) is one of the most important problems operations managers face daily. Many researches have been done to solve this problem and tackle its complexity. The objective of the task is assigning each flight (aircraft) to an available gate while maximizing both conveniences to passengers and the operational efficiency of airport. This objective requires a solution that provides the ability to change and update the gate assignment data on a real time basis. In this paper, we survey the state of the art of these problems and the various methods to obtain the solution. Our survey covers both theoretical and real AGAP with the description of mathematical formulations and resolution methods such as exact algorithms, heuristic algorithms, and metaheuristic algorithms. We also provide a research trend that can inspire researchers about new problems in this area. PMID:25506074

  16. Mr. Gates's summer vacation: a centennial remembrance.

    PubMed

    Bryan, C S

    1997-07-15

    In 1897, Frederick T. Gates, a Baptist minister and adviser to John D. Rockefeller Sr., read the entire second edition of The Principles and Practice of Medicine by William Osler while on a summer vacation at Lake Liberty, New York. The book reinforced the low opinion Gates had of the efficacy of medicine but convinced him that medical science would be a wise investment for the Rockefeller fortune. The results of this investment included the Rockefeller Institute for Medical Research, the General Education Board, the Rockefeller Foundation, and the International Health Board. Gates sponsored Rockefeller funding of full-time clinical professorships, an idea that Osler opposed but that eventually became the prevailing model for medical departments at universities in the United States. PMID:9230006

  17. ISAC's Gating-ML 2.0 data exchange standard for gating description.

    PubMed

    Spidlen, Josef; Moore, Wayne; Brinkman, Ryan R

    2015-07-01

    The lack of software interoperability with respect to gating has traditionally been a bottleneck preventing the use of multiple analytical tools and reproducibility of flow cytometry data analysis by independent parties. To address this issue, ISAC developed Gating-ML, a computer file format to encode and interchange gates. Gating-ML 1.5 was adopted and published as an ISAC Candidate Recommendation in 2008. Feedback during the probationary period from implementors, including major commercial software companies, instrument vendors, and the wider community, has led to a streamlined Gating-ML 2.0. Gating-ML has been significantly simplified and therefore easier to support by software tools. To aid developers, free, open source reference implementations, compliance tests, and detailed examples are provided to stimulate further commercial adoption. ISAC has approved Gating-ML as a standard ready for deployment in the public domain and encourages its support within the community as it is at a mature stage of development having undergone extensive review and testing, under both theoretical and practical conditions. PMID:25976062

  18. Lipid-dependent gating of a voltage-gated potassium channel

    PubMed Central

    Zheng, Hui; Liu, Weiran; Anderson, Lingyan Y.; Jiang, Qiu-Xing

    2011-01-01

    Recent studies hypothesized that phospholipids stabilize two voltage-sensing arginine residues of certain voltage-gated potassium channels in activated conformations. It remains unclear how lipids directly affect these channels. Here, by examining the conformations of the KvAP in different lipids, we showed that without voltage change, the voltage-sensor domains switched from the activated to the resting state when their surrounding lipids were changed from phospholipids to nonphospholipids. Such lipid-determined conformational change was coupled to the ion-conducting pore, suggesting that parallel to voltage gating, the channel is gated by its annular lipids. Our measurements recognized that the energetic cost of lipid-dependent gating approaches that of voltage gating, but kinetically it appears much slower. Our data support that a channel and its surrounding lipids together constitute a functional unit, and natural nonphospholipids such as cholesterol should exert strong effects on voltage-gated channels. Our first observation of lipid-dependent gating may have general implications to other membrane proteins. PMID:21427721

  19. Maritime target identification in gated viewing imagery

    NASA Astrophysics Data System (ADS)

    Hammer, Marcus; Hebel, Marcus; Arens, Michael

    2015-10-01

    The growing interest in unmanned surface vehicles, accident avoidance for naval vessels and automated maritime surveillance leads to a growing need for automatic detection, classification and pose estimation of maritime objects in medium and long ranges. Laser radar imagery is a well proven tool for near to medium range, but up to now for higher distances neither the sensor range nor the sensor resolution was satisfying. As a result of the mentioned limitations of laser radar imagery the potential of laser illuminated gated viewing for automated classification and pose estimation was investigated. The paper presents new techniques for segmentation, pose estimation and model-based identification of naval vessels in gated viewing imagery in comparison with the corresponding results of long range data acquired with a focal plane array laser radar system. The pose estimation in the gated viewing data is directly connected with the model-based identification which makes use of the outline of the object. By setting a sufficient narrow gate, the distance gap between the upper part of the ship and the background leads to an automatic segmentation. By setting the gate the distance to the object is roughly known. With this distance and the imaging properties of the camera, the width of the object perpendicular to the line of sight can be calculated. For each ship in the model library a set of possible 2D appearances in the known distance is calculated and the resulting contours are compared with the measured 2D outline. The result is a match error for each reasonable orientation of each model of the library. The result gained from the gated viewing data is compared with the results of target identification by laser radar imagery of the same maritime objects.

  20. Structure, dynamics and implied gating mechanism of a human cyclic nucleotide-gated channel.

    PubMed

    Gofman, Yana; Schärfe, Charlotta; Marks, Debora S; Haliloglu, Turkan; Ben-Tal, Nir

    2014-12-01

    Cyclic nucleotide-gated (CNG) ion channels are nonselective cation channels, essential for visual and olfactory sensory transduction. Although the channels include voltage-sensor domains (VSDs), their conductance is thought to be independent of the membrane potential, and their gating regulated by cytosolic cyclic nucleotide-binding domains. Mutations in these channels result in severe, degenerative retinal diseases, which remain untreatable. The lack of structural information on CNG channels has prevented mechanistic understanding of disease-causing mutations, precluded structure-based drug design, and hampered in silico investigation of the gating mechanism. To address this, we built a 3D model of the cone tetrameric CNG channel, based on homology to two distinct templates with known structures: the transmembrane (TM) domain of a bacterial channel, and the cyclic nucleotide-binding domain of the mouse HCN2 channel. Since the TM-domain template had low sequence-similarity to the TM domains of the CNG channels, and to reconcile conflicts between the two templates, we developed a novel, hybrid approach, combining homology modeling with evolutionary coupling constraints. Next, we used elastic network analysis of the model structure to investigate global motions of the channel and to elucidate its gating mechanism. We found the following: (i) In the main mode of motion, the TM and cytosolic domains counter-rotated around the membrane normal. We related this motion to gating, a proposition that is supported by previous experimental data, and by comparison to the known gating mechanism of the bacterial KirBac channel. (ii) The VSDs could facilitate gating (supplementing the pore gate), explaining their presence in such 'voltage-insensitive' channels. (iii) Our elastic network model analysis of the CNGA3 channel supports a modular model of allosteric gating, according to which protein domains are quasi-independent: they can move independently, but are coupled to each

  1. Pressure Sensitive Insulated Gate Field Effect Transistor

    NASA Astrophysics Data System (ADS)

    Suminto, James Tjan-Meng

    A pressure sensitive insulated gate field effect transistor has been developed. The device is an elevated gate field-effect-transistor. It consists of a p-type silicon substrate in which two n^+ region, the source and drain, are formed. The gate electrode is a metal film sandwiched in an insulated micro-diaphragm resembling a pill-box which covers the gate oxide, drain, and source. The space between the gate electrode and the oxide is vacuum or an air-gap. When pressure is applied on the diaphragm it deflects and causes a change in the gate capacitance, and thus modulates the conductance of the channel between source and drain. A general theory dealing with the characteristic of this pressure sensitive insulated gate field effect transistor has been derived, and the device fabricated. The fabrication process utilizes the standard integrated circuit fabrication method. It features a batch fabrication of field effect devices followed by the batch fabrication of the deposited diaphragm on top of each field effect device. The keys steps of the diaphragm fabrication are the formation of spacer layer, formation of the diaphragm layer, and the subsequent removal of the spacer layer. The chip size of the device is 600 μm x 1050 mum. The diaphragm size is 200 μm x 200 mum. Characterization of the device has been performed. The current-voltage characteristics with pressure as parameters have been demonstrated and the current-pressure transfer curves obtained. They show non-linear characteristics as those of conventional capacitive pressure sensors. The linearity of threshold voltage versus pressure transfer curves has been demonstrated. The temperature effect on the device performances has been tested. The temperature coefficient of threshold voltage, rather than the electron mobility, has dominated the temperature coefficient of the device. Two temperature compensation schemes have been tested: one method is by connecting two identical PSIGFET in a differential amplifier

  2. The vertical replacement-gate (VRG) MOSFET

    NASA Astrophysics Data System (ADS)

    Hergenrother, J. M.; Oh, Sang-Hyun; Nigam, T.; Monroe, D.; Klemens, F. P.; Kornblit, A.

    2002-07-01

    We have fabricated and demonstrated a new device called the vertical replacement-gate (VRG) MOSFET. This is the first MOSFET ever built in which: (1) all critical transistor dimensions are controlled precisely without lithography and dry etch, (2) the gate length is defined by a deposited film thickness, independently of lithography and etch, and (3) a high-quality gate oxide is grown on a single-crystal Si channel. In addition to this unique combination, the VRG-MOSFET includes self-aligned source/drain extensions (SDEs) formed by solid source diffusion (SSD), small parasitic overlap, junction, and source/drain capacitances, and a replacement-gate approach to enable alternative gate stacks. We have demonstrated nMOSFETs with an initial VRG process, and pMOSFETs with a more mature process. Since both sides of the device pillar drive in parallel, the drive current per μm of coded width can far exceed that of advanced planar MOSFETs. Our 100 nm VRG-pMOSFETs with tOX=25 Å drive 615 μA/μm at 1.5 V with IOFF=8 nA/μm—80% more drive than specified in the 1999 ITRS Roadmap at the same IOFF. Our 50 nm VRG-pMOSFETs with tOX=25 Å approach the 1.0 V roadmap target of ION=350 μA/μm at IOFF=20 nA/μm without the need for a hyperthin (<20 Å) gate oxide. We have described a process for integrating n-channel and p-channel VRG-MOSFETs to form side-by-side CMOS that retains the key VRG advantages while providing packing density and process complexity that is competitive with traditional planar CMOS. All of this is achieved using current manufacturing methods, materials, and tools, and high-performance devices with 50 nm physical gate lengths ( LG) have been demonstrated with precise gate length control without advanced lithography.

  3. Digital flux-gate magnetometer structural analysis

    NASA Astrophysics Data System (ADS)

    Korepanov, Valery; Berkman, Rikhard

    1999-08-01

    Analogue and digital structures of the flux-gate magnetometer are compared. The main disturbing factors in digital circuit were singled out and the additional errors associated with the digital structure are estimated. The reader's attention is drawn to some specific problems associated with digital circuits - the special influence of the unbalanced voltage amplitude at the flux-gate-sensor output and ADC-DAC switching-time instabilities. The given analytical results could be useful for the designer when it is necessary to make a choice of the structural type of magnetometer.

  4. Gated IR Images of Shocked Surfaces

    SciTech Connect

    S. S. Lutz; W. D. Turley; P. M. Rightley; L. E. Primas

    2001-06-01

    Gated infrared (IR) images have been taken of a series of shocked surface geometries in tin. Metal coupons machined with steps and flats were mounted directly to the high explosive. The explosive was point-initiated and 500-ns to 1-microsecond-wide gated images of the target were taken immediately following shock breakout using a Santa Barbara Focalplane InSb camera (SBF-134). Spatial distributions of surface radiance were extracted from the images of the shocked samples and found to be non-single-valued. Several geometries were modeled using CTH, a two-dimensional Eulerian hydrocode.

  5. Gated IR Images of Shocked Surfaces

    NASA Astrophysics Data System (ADS)

    Lutz, Stephen S.; Turley, W. Dale; Rightley, Paul M.; Primas, Lori E.

    2002-07-01

    Gated infrared (IR) images have been taken of a series of shocked surface geometries in tin. Metal coupons machined with steps and flats were mounted directly to the high explosive. The explosive was point-initiated and 500-ns to 1-microsecond-wide gated images of the target were taken immediately following shock breakout using a Santa Barbara Focalplane InSb camera (SBF-134). Spatial distributions of surface radiance were extracted from the images of the shocked samples and found to be non-single-valued. Several surfaces were modeled using CTH, a 2- or 3-dimensional Eulerian hydrocode.

  6. Gated IR images of shocked surfaces.

    SciTech Connect

    Lutz, S. S.; Turley, W. D.; Rightley, P. M.; Primas, L. E.

    2001-01-01

    Gated infrared (IR) images have been taken of a series of shocked surface geometries in tin. Metal coupons machined with steps and flats were mounted directly to the high explosive. The explosive was point-initiated and 500-ns to 1-microsecond-wide gated images of the target were taken immediately following shock breakout using a Santa Barbara Focalplane InSb camera (SBF-134). Spatial distributions of surface radiance were extracted from the images of the shocked samples and found to be non-single-valued. Several geometries were modeled using CTH, a two-dimensional Eulerian hydrocode.

  7. Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride

    NASA Astrophysics Data System (ADS)

    Yang, Jialing; Eller, Brianna S.; Zhu, Chiyu; England, Chris; Nemanich, Robert J.

    2012-09-01

    Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H2/N2 plasma at 650 °C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 °C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 °C. The valence band and conduction band offsets (VBOs and CBOs) of the Al2O3/GaN and HfO2/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al2O3 layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO2/IPL/GaN structures. The VBOs were ˜0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO2 with respect to Al2O3 and GaN, respectively.

  8. Washington Water Power Spokane River Upper Falls Hydroelectric Development, Gates ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Washington Water Power Spokane River Upper Falls Hydroelectric Development, Gates & Gate-Lifting Mechanisms, Spokane River, approximately 0.5 mile northeast of intersection of Spokane Falls Boulevard & Post Street, Spokane, Spokane County, WA

  9. 2. ALABAMA GATES LOOKING SOUTHEAST ALONG LINED CHANNEL, NOTE CHEMICAL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    2. ALABAMA GATES LOOKING SOUTHEAST ALONG LINED CHANNEL, NOTE CHEMICAL PURIFICATION TANK IN DISTANCE FOR KEEPING DOWN GROWTH OF ALGAE - Los Angeles Aqueduct, Alabama Gates, Los Angeles, Los Angeles County, CA

  10. 39. VIEW OF AUXILIARY LOCK MITER GATE, WITH MAIN LOCK ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    39. VIEW OF AUXILIARY LOCK MITER GATE, WITH MAIN LOCK UPSTREAM MITER GATE AND UPSTREAM GUIDEWALL IN BACKGROUND, LOOKING NORTHWEST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 10, Guttenberg, Clayton County, IA

  11. 4. DETAIL VIEW OF DAM, SHOWING TAINTER AND ROLLER GATES, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. DETAIL VIEW OF DAM, SHOWING TAINTER AND ROLLER GATES, GATE PIERS AND DAM BRIDGE, LOOKING SOUTHWEST, DOWNSTREAM - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 10, Guttenberg, Clayton County, IA

  12. DOWNSTREAM LOCK GATE DETAIL VIEW WITH DOG HOUSE. NOTE CONTROL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    DOWNSTREAM LOCK GATE DETAIL VIEW WITH DOG HOUSE. NOTE CONTROL ARM AND GEAR FOR GATE. LOOKING NORTHWEST. - Illinois Waterway, Dresden Island Lock and Dam , 7521 North Lock Road, Channahon, Will County, IL

  13. UPSTREAM LOCK GATE DETAIL AND DOG HOUSE. NOTE ARM AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    UPSTREAM LOCK GATE DETAIL AND DOG HOUSE. NOTE ARM AND GEARING FOR CONTROLLING LOCK GATE. LOOKING WEST SOUTHWEST. - Illinois Waterway, Brandon Road Lock and Dam , 1100 Brandon Road, Joliet, Will County, IL

  14. 2. VIEW NORTHWEST, RACK AND PINION GATE MECHANISM, WITH WRENCH ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    2. VIEW NORTHWEST, RACK AND PINION GATE MECHANISM, WITH WRENCH USED TO OPERATE GEARS - Norwich Water Power Company, Canal Drain Gate, West bank of Shetucket River opposite Twelfth Street, Greenville section, Norwich, New London County, CT

  15. 10. FACING SOUTH FROM WALKWAY OVER HEADRACE TOWARD TRASH GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    10. FACING SOUTH FROM WALKWAY OVER HEADRACE TOWARD TRASH GATE (BOTTOM) AND MILL NO. 1. NOTE GATE HOIST CRANKS ON LEFT, WHEELS ON RIGHT. - Prattville Manufacturing Company, Number One, 242 South Court Street, Prattville, Autauga County, AL

  16. 15. OVERALL VIEW OF UPSTREAM FACE OF LIFT GATE SECTION ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    15. OVERALL VIEW OF UPSTREAM FACE OF LIFT GATE SECTION WITH TAINTER GATE SECTION OF SPILLWAY TO THE LEFT. VIEW TO SOUTHWEST. - Starved Rock Locks & Dam, Illinois Waterway River mile 231, Peru, La Salle County, IL

  17. 19. STAIRWAY TO TAINTER GATE SECTION OF SPILLWAY, SHOWING STEAM ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    19. STAIRWAY TO TAINTER GATE SECTION OF SPILLWAY, SHOWING STEAM PIPES EMERGING FROM BOILERHOUSE (RIGHT) AND CONCRETE TAINTER GATE COUNTER WEIGHTS (BACKGROUND RIGHT). VIEW TO SOUTH. - Starved Rock Locks & Dam, Illinois Waterway River mile 231, Peru, La Salle County, IL

  18. 10. UPSTREAM SIDE OF UPPER MITER GATES SHOWING STOWED LEFT ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    10. UPSTREAM SIDE OF UPPER MITER GATES SHOWING STOWED LEFT WING OF UPPER GUARD GATE (FAR LEFT). VIEW TO NORTHWEST. - Starved Rock Locks & Dam, Illinois Waterway River mile 231, Peru, La Salle County, IL

  19. Improved Classical Simulation of Quantum Circuits Dominated by Clifford Gates

    NASA Astrophysics Data System (ADS)

    Bravyi, Sergey; Gosset, David

    2016-06-01

    We present a new algorithm for classical simulation of quantum circuits over the Clifford+T gate set. The runtime of the algorithm is polynomial in the number of qubits and the number of Clifford gates in the circuit but exponential in the number of T gates. The exponential scaling is sufficiently mild that the algorithm can be used in practice to simulate medium-sized quantum circuits dominated by Clifford gates. The first demonstrations of fault-tolerant quantum circuits based on 2D topological codes are likely to be dominated by Clifford gates due to a high implementation cost associated with logical T gates. Thus our algorithm may serve as a verification tool for near-term quantum computers which cannot in practice be simulated by other means. To demonstrate the power of the new method, we performed a classical simulation of a hidden shift quantum algorithm with 40 qubits, a few hundred Clifford gates, and nearly 50 T gates.

  20. WEST PIER OF NORTH GATE (490 NORTH & 900 EAST), ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    WEST PIER OF NORTH GATE (490 NORTH & 900 EAST), SALT LAKE CITY, UT. VIEW LOOKING SOUTH AT THE WEST PIER OF THE CEMETERY'S NORTH GATE. - Salt Lake City Cemetery, 200 N Street, Salt Lake City, Salt Lake County, UT

  1. NORTH GATE AT 11TH AVENUE (490 NORTH & 900 EAST), ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    NORTH GATE AT 11TH AVENUE (490 NORTH & 900 EAST), SALT LAKE CITY, UT. VIEW LOOKING SOUTH AT CEMETERY'S NORTH GATE (WPA PROJECT, 1938-1941). - Salt Lake City Cemetery, 200 N Street, Salt Lake City, Salt Lake County, UT

  2. 7. South gate to Migel Estate and Farm along original ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. South gate to Migel Estate and Farm along original alignment. Gate located at intersection of Orange Turnpike and Harriman Heights Road. View looking north. - Orange Turnpike, Parallel to new Orange Turnpike, Monroe, Orange County, NY

  3. 1. UPPER SEGMENT OF SPILLWAY CHANNEL, DRUM GATES ALONG SIDE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    1. UPPER SEGMENT OF SPILLWAY CHANNEL, DRUM GATES ALONG SIDE OF CHANNEL, LOOKING SOUTH (up the channel) - Tieton Dam, Spillway & Drum Gates, South & East side of State Highway 12, Naches, Yakima County, WA

  4. 4. SPILLWAY DRUM GATES AND CHANNEL, LOOKING NORTHEAST (upstream face ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. SPILLWAY DRUM GATES AND CHANNEL, LOOKING NORTHEAST (upstream face and Control House in background) - Tieton Dam, Spillway & Drum Gates, South & East side of State Highway 12, Naches, Yakima County, WA

  5. 5. DETAIL VIEW OF DAM, SHOWING ROLLER AND TAINTER GATES, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. DETAIL VIEW OF DAM, SHOWING ROLLER AND TAINTER GATES, GATE PIERS, HEADHOUSES AND DAM BRIDGE, LOOKING NORTHWEST, UPSTREAM - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 9, Lynxville, Crawford County, WI

  6. 13. DETAILED INTERIOR VIEW OF ROLLER GATE OPERATING MACHINERY HOUSE, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    13. DETAILED INTERIOR VIEW OF ROLLER GATE OPERATING MACHINERY HOUSE, SHOWING ROLLER GATE OPERATING MACHINERY, LOOKING NORTH - Upper Mississippi River Nine-Foot Channel Project, Lock & Dam No. 25, Cap au Gris, Lincoln County, MO

  7. 14. DETAIL VIEW OF BRONZE ROLLER GATE GAUGE, LOOKING SOUTHEAST ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    14. DETAIL VIEW OF BRONZE ROLLER GATE GAUGE, LOOKING SOUTHEAST INSIDE ROLLER GATE OPERATING MACHINERY HOUSE - Upper Mississippi River Nine-Foot Channel Project, Lock & Dam No. 25, Cap au Gris, Lincoln County, MO

  8. 12. DETAILED INTERIOR VIEW OF ROLLER GATE OPERATING MACHINERY HOUSE, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    12. DETAILED INTERIOR VIEW OF ROLLER GATE OPERATING MACHINERY HOUSE, SHOWING ROLLER GATE OPERATING MACHINERY, LOOKING SOUTH - Upper Mississippi River Nine-Foot Channel Project, Lock & Dam No. 25, Cap au Gris, Lincoln County, MO

  9. 12. DETAIL VIEW OF CIRCULAR BRONZE ROLLER GATE POSITION GAUGE, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    12. DETAIL VIEW OF CIRCULAR BRONZE ROLLER GATE POSITION GAUGE, ROLLER GATE PIER HOUSE, TYPE 2A, DAM - Mississippi River 9-Foot Channel Project, Lock & Dam No. 11, Upper Mississippi River, Dubuque, Dubuque County, IA

  10. 6. DETAIL VIEW OF TAINTER GATE PIER AND NONSUBMERSIBLE TAINTER ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    6. DETAIL VIEW OF TAINTER GATE PIER AND NON-SUBMERSIBLE TAINTER GATE, SHOWING MAIN LOCK IN BACKGROUND, LOOKING NORTH (UPSTREAM) - Upper Mississippi River 9-Foot Channel Project, Lock & Dam 26R, Alton, Madison County, IL

  11. Gate sequence for continuous variable one-way quantum computation

    PubMed Central

    Su, Xiaolong; Hao, Shuhong; Deng, Xiaowei; Ma, Lingyu; Wang, Meihong; Jia, Xiaojun; Xie, Changde; Peng, Kunchi

    2013-01-01

    Measurement-based one-way quantum computation using cluster states as resources provides an efficient model to perform computation and information processing of quantum codes. Arbitrary Gaussian quantum computation can be implemented sufficiently by long single-mode and two-mode gate sequences. However, continuous variable gate sequences have not been realized so far due to an absence of cluster states larger than four submodes. Here we present the first continuous variable gate sequence consisting of a single-mode squeezing gate and a two-mode controlled-phase gate based on a six-mode cluster state. The quantum property of this gate sequence is confirmed by the fidelities and the quantum entanglement of two output modes, which depend on both the squeezing and controlled-phase gates. The experiment demonstrates the feasibility of implementing Gaussian quantum computation by means of accessible gate sequences.

  12. 5. VIEW OF INCLINED OUTLET GATE WHEEL, STEM AND STEM ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. VIEW OF INCLINED OUTLET GATE WHEEL, STEM AND STEM GUIDE, (12' DIAMETER HARDESTY MODEL 112 CIRCULAR GATE), LOOKING NORTHEAST - High Mountain Dams in Bonneville Unit, Island Lake Dam, Wasatch National Forest, Kamas, Summit County, UT

  13. 7. VIEW OF UPRIGHT OUTLET GATE, WHEEL STEM AND STEM ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. VIEW OF UPRIGHT OUTLET GATE, WHEEL STEM AND STEM GUIDE (14' DIAMETER CIRCULAR CALCO CAST IRON SLIDE GATE), LOOKING SOUTHEAST - High Mountain Dams in Bonneville Unit, Fire Lake Dam, Wasatch National Forest, Kamas, Summit County, UT

  14. 4. VIEW NORTHWEST, INTERIOR OF GATEHOUSE, SHOWING ROW OF GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. VIEW NORTHWEST, INTERIOR OF GATEHOUSE, SHOWING ROW OF GATE OPERATING MECHANISMS; HEIGHT OF STEMS INDICATES FOREGROUND GATE IS OPEN - Norwich Water Power Company, Headgates, West bank of Shetucket River opposite Fourteenth Street, Greenville section, Norwich, New London County, CT

  15. 7. VIEW OF INCLINED OUTLET GATE WHEEL, STEM AND STEM ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. VIEW OF INCLINED OUTLET GATE WHEEL, STEM AND STEM GUIDE (15' HARDESTY MODEL 115 GATE), LOOKING NORTHWEST - High Mountain Dams in Bonneville Unit, Marjorie Lake Dam, Wasatch National Forest, Kamas, Summit County, UT

  16. 5. VIEW OF UPRIGHT OUTLET GATE WHEEL, STEM AND STEM ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. VIEW OF UPRIGHT OUTLET GATE WHEEL, STEM AND STEM GUIDE (HARDESTY CAST IRON RECTANGULAR SLIDE GATE), LOOKING SOUTHWEST - High Mountain Dams in Bonneville Unit, Lost Lake Dam, Kamas, Summit County, UT

  17. 5. VIEW OF UPRIGHT OUTLET GATE, STEM, STEM GUIDE AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. VIEW OF UPRIGHT OUTLET GATE, STEM, STEM GUIDE AND WHEEL (10' HARDESTY CAST IRON VERTICAL LIFT GATE), LOOKING WEST - High Mountain Dams in Bonneville Unit, Weir Lake Dam, Wasatch National Forest, Kamas, Summit County, UT

  18. 4. VIEW OF INCLINED OUTLET GATE, STEM, STEM GUIDE AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. VIEW OF INCLINED OUTLET GATE, STEM, STEM GUIDE AND WHEEL (10' HARDESTY VERTICAL LIFT GATE), LOOKING NORTHWEST - High Mountain Dams in Bonneville Unit, Pot Lake Dam, Wasatch National Forest, Kamas, Summit County, UT

  19. 6. VIEW SHOWING INCLINED OUTLET GATE WHEEL, STEM AND STEM ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    6. VIEW SHOWING INCLINED OUTLET GATE WHEEL, STEM AND STEM GUIDE (18' HARDESTY GATE), LOOKING SOUTHEAST - High Mountain Dams in Bonneville Unit, Long Lake Dam, Wasatch National Forest, Kamas, Summit County, UT

  20. 14. DETAILS OF GATE OPERATING MECHANISM, SHOWING RACK SECTION, CUT ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    14. DETAILS OF GATE OPERATING MECHANISM, SHOWING RACK SECTION, CUT TEETH, CAST TEETH, GATE PINION (1907) - Nine Mile Hydroelectric Development, Powerhouse, State Highway 291 along Spokane River, Nine Mile Falls, Spokane County, WA

  1. 5. DETAIL VIEW OF THE RADIAL GATE AT THE OUTLET ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. DETAIL VIEW OF THE RADIAL GATE AT THE OUTLET WORKS AT DAM 96, LOOKING WEST. THE GATE IS IN THE DOWN POSITION, ALLOWING PARTIAL DISCHARGE. - Upper Souris National Wildlife Refuge, Dam 96, Souris River Basin, Foxholm, Surrey (England), ND

  2. Determination of prospective displacement-based gate threshold for respiratory-gated radiation delivery from retrospective phase-based gate threshold selected at 4D CT simulation

    SciTech Connect

    Vedam, S.; Archambault, L.; Starkschall, G.; Mohan, R.; Beddar, S.

    2007-11-15

    Four-dimensional (4D) computed tomography (CT) imaging has found increasing importance in the localization of tumor and surrounding normal structures throughout the respiratory cycle. Based on such tumor motion information, it is possible to identify the appropriate phase interval for respiratory gated treatment planning and delivery. Such a gating phase interval is determined retrospectively based on tumor motion from internal tumor displacement. However, respiratory-gated treatment is delivered prospectively based on motion determined predominantly from an external monitor. Therefore, the simulation gate threshold determined from the retrospective phase interval selected for gating at 4D CT simulation may not correspond to the delivery gate threshold that is determined from the prospective external monitor displacement at treatment delivery. The purpose of the present work is to establish a relationship between the thresholds for respiratory gating determined at CT simulation and treatment delivery, respectively. One hundred fifty external respiratory motion traces, from 90 patients, with and without audio-visual biofeedback, are analyzed. Two respiratory phase intervals, 40%-60% and 30%-70%, are chosen for respiratory gating from the 4D CT-derived tumor motion trajectory. From residual tumor displacements within each such gating phase interval, a simulation gate threshold is defined based on (a) the average and (b) the maximum respiratory displacement within the phase interval. The duty cycle for prospective gated delivery is estimated from the proportion of external monitor displacement data points within both the selected phase interval and the simulation gate threshold. The delivery gate threshold is then determined iteratively to match the above determined duty cycle. The magnitude of the difference between such gate thresholds determined at simulation and treatment delivery is quantified in each case. Phantom motion tests yielded coincidence of simulation

  3. Stochastic 16-state model of voltage gating of gap-junction channels enclosing fast and slow gates.

    PubMed

    Paulauskas, Nerijus; Pranevicius, Henrikas; Mockus, Jonas; Bukauskas, Feliksas F

    2012-06-01

    Gap-junction (GJ) channels formed of connexin (Cx) proteins provide a direct pathway for electrical and metabolic cell-cell interaction. Each hemichannel in the GJ channel contains fast and slow gates that are sensitive to transjunctional voltage (Vj). We developed a stochastic 16-state model (S16SM) that details the operation of two fast and two slow gates in series to describe the gating properties of homotypic and heterotypic GJ channels. The operation of each gate depends on the fraction of Vj that falls across the gate (VG), which varies depending on the states of three other gates in series, as well as on parameters of the fast and slow gates characterizing 1), the steepness of each gate's open probability on VG; 2), the voltage at which the open probability of each gate equals 0.5; 3), the gating polarity; and 4), the unitary conductances of the gates and their rectification depending on VG. S16SM allows for the simulation of junctional current dynamics and the dependence of steady-state junctional conductance (gj,ss) on Vj. We combined global coordinate optimization algorithms with S16SM to evaluate the gating parameters of fast and slow gates from experimentally measured gj,ss-Vj dependencies in cells expressing different Cx isoforms and forming homotypic and/or heterotypic GJ channels. PMID:22713562

  4. Stochastic 16-State Model of Voltage Gating of Gap-Junction Channels Enclosing Fast and Slow Gates

    PubMed Central

    Paulauskas, Nerijus; Pranevicius, Henrikas; Mockus, Jonas; Bukauskas, Feliksas F.

    2012-01-01

    Gap-junction (GJ) channels formed of connexin (Cx) proteins provide a direct pathway for electrical and metabolic cell-cell interaction. Each hemichannel in the GJ channel contains fast and slow gates that are sensitive to transjunctional voltage (Vj). We developed a stochastic 16-state model (S16SM) that details the operation of two fast and two slow gates in series to describe the gating properties of homotypic and heterotypic GJ channels. The operation of each gate depends on the fraction of Vj that falls across the gate (VG), which varies depending on the states of three other gates in series, as well as on parameters of the fast and slow gates characterizing 1), the steepness of each gate's open probability on VG; 2), the voltage at which the open probability of each gate equals 0.5; 3), the gating polarity; and 4), the unitary conductances of the gates and their rectification depending on VG. S16SM allows for the simulation of junctional current dynamics and the dependence of steady-state junctional conductance (gj,ss) on Vj. We combined global coordinate optimization algorithms with S16SM to evaluate the gating parameters of fast and slow gates from experimentally measured gj,ss-Vj dependencies in cells expressing different Cx isoforms and forming homotypic and/or heterotypic GJ channels. PMID:22713562

  5. Reliability study of refractory gate gallium arsenide MESFETS

    NASA Technical Reports Server (NTRS)

    Yin, J. C. W.; Portnoy, W. M.

    1981-01-01

    Refractory gate MESFET's were fabricated as an alternative to aluminum gate devices, which have been found to be unreliable as RF power amplifiers. In order to determine the reliability of the new structures, statistics of failure and information about mechanisms of failure in refractory gate MESFET's are given. Test transistors were stressed under conditions of high temperature and forward gate current to enhance failure. Results of work at 150 C and 275 C are reported.

  6. Effect of Ti doping on Ta 2O 5 stacks with Ru and Al gates

    NASA Astrophysics Data System (ADS)

    Paskaleva, A.; Tapajna, M.; Atanassova, E.; Frohlich, K.; Vincze, A.; Dobročka, E.

    2008-07-01

    The Ti-doped Ta 2O 5 thin films (<10 nm) obtained by rf sputtering are studied with respect to their composition, dielectric and electrical properties. The incorporation of Ti is performed by two methods - a surface doping, where a thin Ti layer is deposited on the top of Ta 2O 5 and a bulk doping where the Ti layer is sandwiched between two layers of Ta 2O 5. The effect of the process parameters (the method and level of doping) on the elemental distribution in-depth of the films is investigated by the time of flight secondary ion mass spectroscopy (ToF-SIMS). The Ti and Ta 2O 5 are intermixed throughout the whole thickness but the layers are very inhomogeneous. Two sub-layers exist in all the samples — a near interfacial region which is a mixture of Ta-, Ti-, Si-oxides as well as TaSiO, and an upper Ti-doped Ta 2O 5 sub-layer. For both methods of doping, Ti tends to pile-up at the Si interface. The electrical characterisation is performed on capacitors with Al- and Ru-gate electrodes. The two types of MIS structures exhibit distinctly different electrical behavior: the Ru gate provides higher dielectric permittivity while the stacks with Al electrode are better in terms of leakage currents. The specific metal-dielectric reactions and metal-induced electrically active defects for each metal electrode/high- k dielectric stack define its particular electrical behavior. It is demonstrated that the Ti doping of Ta 2O 5 is a way of remarkable improvement of leakage characteristics (the current reduction with more than four orders of magnitude as compared with undoped Ta 2O 5) of Ru-gated capacitors which originates from Ti induced suppression of the oxygen vacancy related defects.

  7. Inhibition of voltage-gated calcium channels by fluoxetine in rat hippocampal pyramidal cells.

    PubMed

    Deák, F; Lasztóczi, B; Pacher, P; Petheö, G L; Valéria Kecskeméti; Spät, A

    2000-04-01

    Fluoxetine, an antidepressant which is used world-wide, is a prominent member of the class of selective serotonin re-uptake inhibitors. Recently, inhibition of voltage-gated Na(+) and K(+) channels by fluoxetine has also been reported. We examined the effect of fluoxetine on voltage-gated calcium channels using the patch-clamp technique in the whole-cell configuration. In hippocampal pyramidal cells, fluoxetine inhibited the low-voltage-activated (T-type) calcium current with an IC(50) of 6.8 microM. Fluoxetine decreased the high-voltage-activated (HVA) calcium current with an IC(50) between 1 and 2 microM. Nifedipine and omega-conotoxin GVIA inhibited the HVA current by 24% and 43%, respectively. Fluoxetine (3 microM), applied in addition to nifedipine or omega-conotoxin, further reduced the current. When fluoxetine (3 microM) was applied first neither nifedipine nor omega-conotoxin attenuated the remaining component of the HVA current. This observation indicates that fluoxetine inhibits both L- and N-type currents. In addition, fluoxetine inhibited the HVA calcium current in carotid body type I chemoreceptor cells and pyramidal neurons prepared from prefrontal cortex. In hippocampal pyramidal cells high K(+)-induced seizure-like activity was inhibited by 1 microM fluoxetine; the mean burst duration was shortened by an average of 44%. These results provide evidence for inhibition of T-, N- and L-type voltage-gated calcium channels by fluoxetine at therapeutically relevant concentrations. PMID:10727713

  8. Multiqubit controlled unitary gate by adiabatic passage with an optical cavity

    SciTech Connect

    Goto, Hayato; Ichimura, Kouichi

    2004-07-01

    A new implementation of quantum gates by adiabatic passage with an optical cavity is proposed. This implementation allows one to perform not only elementary gates, such as one-qubit gates and a controlled-NOT gate, but also multiqubit controlled unitary gates. Some quantum gates are numerically simulated. From the simulation results, it is concluded that this implementation of the three-qubit controlled gates is more efficient than decomposing into the elementary gates.

  9. Field calibration of submerged sluice gates in irrigation canals

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Four rectangular sluice gates were calibrated for submerged-flow conditions using nearly 16,000 field-measured data points on Canal B of the B-XII irrigation scheme in Lebrija, Spain. Water depth and gate opening values were measured using acoustic sensors at each of the gate structures, and the dat...

  10. 30 CFR 56.19070 - Closing cage doors or gates.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Closing cage doors or gates. 56.19070 Section... Hoisting Hoisting Procedures § 56.19070 Closing cage doors or gates. Cage doors or gates shall be closed while persons are being hoisted; they shall not be opened until the cage has come to a stop....

  11. 30 CFR 56.19070 - Closing cage doors or gates.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Closing cage doors or gates. 56.19070 Section... Hoisting Hoisting Procedures § 56.19070 Closing cage doors or gates. Cage doors or gates shall be closed while persons are being hoisted; they shall not be opened until the cage has come to a stop....

  12. 30 CFR 57.19070 - Closing cage doors or gates.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Closing cage doors or gates. 57.19070 Section... Hoisting Hoisting Procedures § 57.19070 Closing cage doors or gates. Cage doors or gates shall be closed while persons are being hoisted; they shall not be opened until the cage has come to a stop....

  13. 30 CFR 57.19070 - Closing cage doors or gates.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Closing cage doors or gates. 57.19070 Section... Hoisting Hoisting Procedures § 57.19070 Closing cage doors or gates. Cage doors or gates shall be closed while persons are being hoisted; they shall not be opened until the cage has come to a stop....

  14. 30 CFR 56.19070 - Closing cage doors or gates.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Closing cage doors or gates. 56.19070 Section... Hoisting Hoisting Procedures § 56.19070 Closing cage doors or gates. Cage doors or gates shall be closed while persons are being hoisted; they shall not be opened until the cage has come to a stop....

  15. 30 CFR 57.19070 - Closing cage doors or gates.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Closing cage doors or gates. 57.19070 Section... Hoisting Hoisting Procedures § 57.19070 Closing cage doors or gates. Cage doors or gates shall be closed while persons are being hoisted; they shall not be opened until the cage has come to a stop....

  16. 30 CFR 57.19070 - Closing cage doors or gates.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Closing cage doors or gates. 57.19070 Section... Hoisting Hoisting Procedures § 57.19070 Closing cage doors or gates. Cage doors or gates shall be closed while persons are being hoisted; they shall not be opened until the cage has come to a stop....

  17. 30 CFR 57.19070 - Closing cage doors or gates.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Closing cage doors or gates. 57.19070 Section... Hoisting Hoisting Procedures § 57.19070 Closing cage doors or gates. Cage doors or gates shall be closed while persons are being hoisted; they shall not be opened until the cage has come to a stop....

  18. 30 CFR 56.19070 - Closing cage doors or gates.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Closing cage doors or gates. 56.19070 Section... Hoisting Hoisting Procedures § 56.19070 Closing cage doors or gates. Cage doors or gates shall be closed while persons are being hoisted; they shall not be opened until the cage has come to a stop....

  19. 30 CFR 56.19070 - Closing cage doors or gates.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Closing cage doors or gates. 56.19070 Section... Hoisting Hoisting Procedures § 56.19070 Closing cage doors or gates. Cage doors or gates shall be closed while persons are being hoisted; they shall not be opened until the cage has come to a stop....

  20. 2. CLOSEUP OF SOUTH FACADE OF UPPER FALLS GATE HOUSE, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    2. CLOSEUP OF SOUTH FACADE OF UPPER FALLS GATE HOUSE, SHOWING TRASH RACKS, REMOVABLE STEEL DOORS, TRASH RAKE STRUCTURE, AND DERRICK, WINCH AND CABLE GATE LIFTING DEVICE, LOOKING SOUTH/SOUTHWEST. - Washington Water Power Spokane River Upper Falls Hydroelectric Development, Gate House, Spokane River, approximately 0.5 mile northeast of intersection of Spokane Falls Boulevard & Post Street, Spokane, Spokane County, WA

  1. CHARACTERISTICS OF FLAP GATES AT THE END OF DRAIN PIPES

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Flap gates are commonly used at the end of pipe drains and pump outlets to prevent back flows of water and entry of small animals. Flap gates are relatively inexpensive, with low maintenance costs, but can trap debris in their hinge systems. Many texts refer to studies performed on flap gates at t...

  2. Intake side of the gate. The reservoir, stilling well, and ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Intake side of the gate. The reservoir, stilling well, and drop to the main canal channel are visible beyond the gate - Wellton-Mohawk Irrigation System, Radial Gate Check with Drop, Wellton Canal 9.9, West of Avenue 34 East & north of County Ninth Street, Wellton, Yuma County, AZ

  3. Detail of elevation gauge, radial gate hoist mechanism, and concrete ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Detail of elevation gauge, radial gate hoist mechanism, and concrete walkway on top of the gate. View to the south-southwest - Wellton-Mohawk Irrigation System, Radial Gate Check with Drop, Wellton Canal 9.9, West of Avenue 34 East & north of County Ninth Street, Wellton, Yuma County, AZ

  4. Rapidly Reconfigurable All-Optical Universal Logic Gates

    SciTech Connect

    Goddard, L L; Kallman, J S; Bond, T C

    2006-06-21

    We present designs and simulations for a highly cascadable, rapidly reconfigurable, all-optical, universal logic gate. We will discuss the gate's expected performance, e.g. speed, fanout, and contrast ratio, as a function of the device layout and biasing conditions. The gate is a three terminal on-chip device that consists of: (1) the input optical port, (2) the gate selection port, and (3) the output optical port. The device can be built monolithically using a standard multiple quantum well graded index separate confinement heterostructure laser configuration. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog electrical or optical signal at the gate selection port. Specifically, the same gate can be selected to execute one of the 2 basic unary operations (NOT or COPY), or one of the 6 binary operations (OR, XOR, AND, NOR, XNOR, or NAND), or one of the many logic operations involving more than two inputs. The speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal modulation speed of a laser, which can be on the order of tens of GHz. The reprogrammable nature of the universal gate offers maximum flexibility and interchangeability for the end user since the entire application of a photonic integrated circuit built from cascaded universal logic gates can be changed simply by adjusting the gate selection port signals.

  5. SUPPRESSION OF AFTERPULSING IN PHOTOMULTIPLIERS BY GATING THE PHOTOCATHODE

    EPA Science Inventory

    A number of gating schemes to minimize the long-term afterpulse signal in photomultipliers have been evaluated. Blocking the excitation pulse by gating the photocathode was found to reduce the gate-on afterpulse background by a factor of 230 over that for nongated operation. Thi...

  6. 15. VIEW SHOWING WATER FLOWING THROUGH THE ORIGINAL DIVERSION GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    15. VIEW SHOWING WATER FLOWING THROUGH THE ORIGINAL DIVERSION GATE FROM THE OUTLET CHANNEL INTO THE BY-PASS CHANNEL LEADING TO THE ORIGINAL SOURIS RIVER CHANNEL (Note: this gate has since been replaced with concrete diversion gates, see HAER Photograph No ND-3-A-7) - Upper Souris National Wildlife Refuge, Dam 83, Souris River Basin, Foxholm, Surrey (England), ND

  7. High-fidelity gates in quantum dot spin qubits

    PubMed Central

    Koh, Teck Seng; Coppersmith, S. N.; Friesen, Mark

    2013-01-01

    Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet–triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning ϵ, which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound that is specific to the qubit-gate combination. We show that similar gate fidelities should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins. PMID:24255105

  8. Influence of Underlap on Gate Stack DG-MOSFET for analytical study of Analog/RF performance

    NASA Astrophysics Data System (ADS)

    Kundu, Atanu; Dasgupta, Arpan; Das, Rahul; Chakraborty, Shramana; Dutta, Arka; Sarkar, Chandan K.

    2016-06-01

    In this paper, the characteristics of 18 nm Underlap Double Gate (U-DG) NMOSFET with gate stack, (GS) are presented. The high-k dielectric as gate insulator under consideration is Hafnium Dioxide (HfO2). The SiO2 padding reduces the effect of scattering at the silicon and oxide interface. The ratio of on current to off current is used for optimizing the underlap length. The Analog and RF performance comparison are shown in this paper considering the drain current (Id), the transconductance (gm), the intrinsic gain (gmRo), the intrinsic capacitances (Cgs, Cgd), the intrinsic resistances (Rgs, Rgd), the transport delay (τm), the intrinsic inductance (Hsd), the unity current gain cut-off frequency (fT) and the maximum frequency of oscillation (fmax). RF parameters are extracted using the Non Quasi Static (NQS) model of the U-DG MOSFET. The performance of single stage amplifiers using the devices is also analyzed. The sharpest transition is shown in case of U-DG-GS MOSFET with optimized underlap length and enhancement in the intrinsic capacitances and resistances, and unity Gain Bandwidth product in case of devices with GS.

  9. Spin qubits with electrically gated polyoxometalate molecules.

    PubMed

    Lehmann, Jörg; Gaita-Arino, Alejandro; Coronado, Eugenio; Loss, Daniel

    2007-05-01

    Spin qubits offer one of the most promising routes to the implementation of quantum computers. Very recent results in semiconductor quantum dots show that electrically-controlled gating schemes are particularly well-suited for the realization of a universal set of quantum logical gates. Scalability to a larger number of qubits, however, remains an issue for such semiconductor quantum dots. In contrast, a chemical bottom-up approach allows one to produce identical units in which localized spins represent the qubits. Molecular magnetism has produced a wide range of systems with properties that can be tailored, but so far, there have been no molecules in which the spin state can be controlled by an electrical gate. Here we propose to use the polyoxometalate [PMo12O40(VO)2]q-, where two localized spins with S = 1/2 can be coupled through the electrons of the central core. Through electrical manipulation of the molecular redox potential, the charge of the core can be changed. With this setup, two-qubit gates and qubit readout can be implemented. PMID:18654290

  10. Protected gates for topological quantum field theories

    NASA Astrophysics Data System (ADS)

    Koenig, Robert

    2015-03-01

    We give restrictions on the locality-preserving unitary automorphisms U, which are protected gates, for topologically ordered systems. For arbitrary anyon models, we show that such unitaries only generate a finite group, and hence do not provide universality. For abelian anyon models, we find that the logical action of U is contained in a proper subgroup of the generalized Clifford group. In the case D(?2), which describes Kitaev's toric code, this represents a tightening of statement previously obtained within the stabilizer framework (PRL 110:170503). For non-abelian models, we find that such automorphisms are very limited: for example, there is no non-trivial gate for Fibonacci anyons. For Ising anyons, protected gates are elements of the Pauli group. These results are derived by relating such automorphisms to symmetries of the underlying anyon model: protected gates realize automorphisms of the Verlinde algebra. We additionally use the compatibility with basis changes to characterize the logical action. This is joint work with M. Beverland, F. Pastawski, J. Preskill and S. Sijher.

  11. Penumbras of Care beyond the Schoolhouse Gate.

    ERIC Educational Resources Information Center

    Hagenau, W. Paul

    1980-01-01

    Examines the responsibility of care owed to students by the school when the student is off the school premises. Concludes that prudent administrators must never presume that students automatically shed the protective mantle of the school's duty of care when they leave the schoolhouse gate. (Author/IRT)

  12. Interface Modification of Pentacene OFET Gate Dielectrics

    NASA Astrophysics Data System (ADS)

    Jakabovič, Ján; Kováč, Jaroslav; Srnánek, Rudolf; Kováč, Jaroslav; Sokolský, Michal; Cirák, Július; Haško, Daniel; Resel, Roland; Zojer, Egbert

    Pentacene organic field effect transistors (OFETs) electrical and structural properties have already been analysed from the point of view of different gate dielectric and growth conditions utilization. The AFM and micro Raman investigations show that the first organic monolayer at the pentacene/dielectric interface are essential determinants of carrier transport phenomena and achievable drain current of pentacene OFETs.

  13. A fail-safe CMOS logic gate

    NASA Technical Reports Server (NTRS)

    Bobin, V.; Whitaker, S.

    1990-01-01

    This paper reports a design technique to make Complex CMOS Gates fail-safe for a class of faults. Two classes of faults are defined. The fail-safe design presented has limited fault-tolerance capability. Multiple faults are also covered.

  14. Pulse Shaping Entangling Gates and Error Supression

    NASA Astrophysics Data System (ADS)

    Hucul, D.; Hayes, D.; Clark, S. M.; Debnath, S.; Quraishi, Q.; Monroe, C.

    2011-05-01

    Control of spin dependent forces is important for generating entanglement and realizing quantum simulations in trapped ion systems. Here we propose and implement a composite pulse sequence based on the Molmer-Sorenson gate to decrease gate infidelity due to frequency and timing errors. The composite pulse sequence uses an optical frequency comb to drive Raman transitions simultaneously detuned from trapped ion transverse motional red and blue sideband frequencies. The spin dependent force displaces the ions in phase space, and the resulting spin-dependent geometric phase depends on the detuning. Voltage noise on the rf electrodes changes the detuning between the trapped ions' motional frequency and the laser, decreasing the fidelity of the gate. The composite pulse sequence consists of successive pulse trains from counter-propagating frequency combs with phase control of the microwave beatnote of the lasers to passively suppress detuning errors. We present the theory and experimental data with one and two ions where a gate is performed with a composite pulse sequence. This work supported by the U.S. ARO, IARPA, the DARPA OLE program, the MURI program; the NSF PIF Program; the NSF Physics Frontier Center at JQI; the European Commission AQUTE program; and the IC postdoc program administered by the NGA.

  15. Corner Office Interview: Gates Foundation's Deborah Jacobs

    ERIC Educational Resources Information Center

    Miller, Rebecca

    2010-01-01

    U.S. libraries gave the world a top talent when Deborah Jacobs left her transformational role as City Librarian of Seattle in 2008 to head the Bill & Melinda Gates Foundation's Global Libraries program, the international sibling to the U.S. Libraries program. The initiative fosters national-scale projects with grantees in transitioning countries…

  16. Gates Fund Creates Plan for College Completion

    ERIC Educational Resources Information Center

    Gose, Ben

    2008-01-01

    The Bill & Melinda Gates Foundation plans to spend several hundred million dollars over the next five years to double the number of low-income young people who complete a college degree or certificate program by age 26. Foundation officials described the ambitious plan to an exclusive group of education leaders, citing 2025 as a target goal. If…

  17. Slime mould gates, roads and sensors

    NASA Astrophysics Data System (ADS)

    Adamatzky, Andrew

    2015-03-01

    The photographs present a wide range of problems solved by the slime mould P. polycephalum: imitation of human-made transport pathways, realisation of Boolean logical gates, fabrication of self-repairing routable biowires, implementation of delay elements in computing circuits, computational geometry, sensors and a would-be nervous system...

  18. Hafnium dioxide gate dielectrics, metal gate electrodes, and phenomena occurring at their interfaces

    NASA Astrophysics Data System (ADS)

    Schaeffer, James Kenyon, III

    As metal-oxide-semiconductor field-effect transistor (MOSFET) gate lengths scale down below 45 nm, the gate oxide thickness approaches 1 nm equivalent oxide thickness. At this thickness, conventional silicon dioxide (SiO 2) gate dielectrics suffer from excessive gate leakage. Higher permittivity dielectrics are required to counter the increase in gate leakage. Hafnium dioxide (HfO2) has emerged as a promising dielectric candidate. HfO2 films deposited using metal organic chemical vapor deposition are being studied to determine the impact of process and annealing conditions on the physical and electrical properties of the gate dielectric. This study indicates that deposition and annealing temperatures influence the microstructure, density, impurity concentration, chemical environment of the impurities, and band-gap of the HfO2 dielectric. Correlations of the electrical and physical properties of the films indicate that impurities in the form of segregated carbon clusters, and low HfO2 density are detrimental to the leakage properties of the gate dielectric. Additionally, as the HfO2 thickness scales, the additional series capacitance due to poly-silicon depletion plays a larger roll in reducing the total gate capacitance. To solve this problem, high performance bulk MOSFETs will require dual metal gate electrodes possessing work functions near the silicon band edges for optimized drive current. This investigation evaluates TiN, Ta-Si-N, Ti-Al-N, WN, TaN, TaSi, Ir and IrO2 electrodes as candidate electrodes on HfO2 dielectrics. The metal-dielectric compatibility was studied by annealing the gate stacks at different temperatures. The physical stability and effective work functions of metal electrodes on HfO2 are discussed. Finally, Fermi level pinning of the metal is a barrier to identifying materials with appropriate threshold voltages. The contributions to the Fermi level pinning of platinum electrodes on HfO2 gate dielectrics are investigated by examining the

  19. COHERENTLY DEDISPERSED GATED IMAGING OF MILLISECOND PULSARS

    SciTech Connect

    Roy, Jayanta; Bhattacharyya, Bhaswati

    2013-03-10

    Motivated by the need for rapid localization of newly discovered faint millisecond pulsars (MSPs), we have developed a coherently dedispersed gating correlator. This gating correlator accounts for the orbital motions of MSPs in binaries while folding the visibilities with a best-fit topocentric rotational model derived from a periodicity search in a simultaneously generated beamformer output. Unique applications of the gating correlator for sensitive interferometric studies of MSPs are illustrated using the Giant Metrewave Radio Telescope (GMRT) interferometric array. We could unambiguously localize five newly discovered Fermi MSPs in the on-off gated image plane with an accuracy of {+-}1''. Immediate knowledge of such a precise position enables the use of sensitive coherent beams of array telescopes for follow-up timing observations which substantially reduces the use of telescope time ({approx}20 Multiplication-Sign for the GMRT). In addition, a precise a priori astrometric position reduces the effect of large covariances in the timing fit (with discovery position, pulsar period derivative, and an unknown binary model), which in-turn accelerates the convergence to the initial timing model. For example, while fitting with the precise a priori position ({+-}1''), the timing model converges in about 100 days, accounting for the effect of covariance between the position and pulsar period derivative. Moreover, such accurate positions allow for rapid identification of pulsar counterparts at other wave bands. We also report a new methodology of in-beam phase calibration using the on-off gated image of the target pulsar, which provides optimal sensitivity of the coherent array removing possible temporal and spacial decoherences.

  20. Statistical Determination of the Gating Windows for Respiratory-Gated Radiotherapy Using a Visible Guiding System.

    PubMed

    Oh, Se An; Yea, Ji Woon; Kim, Sung Kyu

    2016-01-01

    Respiratory-gated radiation therapy (RGRT) is used to minimize the radiation dose to normal tissue in lung-cancer patients. Although determining the gating window in the respiratory phase of patients is important in RGRT, it is not easy. Our aim was to determine the optimal gating window when using a visible guiding system for RGRT. Between April and October 2014, the breathing signals of 23 lung-cancer patients were recorded with a real-time position management (RPM) respiratory gating system (Varian, USA). We performed statistical analysis with breathing signals to find the optimal gating window for guided breathing in RGRT. When we compared breathing signals before and after the breathing training, 19 of the 23 patients showed statistically significant differences (p < 0.05). The standard deviation of the respiration signals after breathing training was lowest for phases of 30%-70%. The results showed that the optimal gating window in RGRT is 40% (30%-70%) with respect to repeatability for breathing after respiration training with the visible guiding system. RGRT was performed with the RPM system to confirm the usefulness of the visible guiding system. The RPM system and our visible guiding system improve the respiratory regularity, which in turn should improve the accuracy and efficiency of RGRT. PMID:27228097