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Sample records for high al stress

  1. Creep Strain and Strain Rate Response of 2219 Al Alloy at High Stress Levels

    NASA Technical Reports Server (NTRS)

    Taminger, Karen M. B.; Wagner, John A.; Lisagor, W. Barry

    1998-01-01

    As a result of high localized plastic deformation experienced during proof testing in an International Space Station connecting module, a study was undertaken to determine the deformation response of a 2219-T851 roll forging. After prestraining 2219-T851 Al specimens to simulate strains observed during the proof testing, creep tests were conducted in the temperature range from ambient temperature to 107 C (225 F) at stress levels approaching the ultimate tensile strength of 2219-T851 Al. Strain-time histories and strain rate responses were examined. The strain rate response was extremely high initially, but decayed rapidly, spanning as much as five orders of magnitude during primary creep. Select specimens were subjected to incremental step loading and exhibited initial creep rates of similar magnitude for each load step. Although the creep rates decreased quickly at all loads, the creep rates dropped faster and reached lower strain rate levels for lower applied loads. The initial creep rate and creep rate decay associated with primary creep were similar for specimens with and without prestrain; however, prestraining (strain hardening) the specimens, as in the aforementioned proof test, resulted in significantly longer creep life.

  2. High-Temperature Flow Stress and Recrystallization Characteristics of Al-Bearing Microalloyed TWIP Steels

    NASA Astrophysics Data System (ADS)

    Somani, Mahesh Chandra; Porter, David A.; Hamada, Atef S.; Karjalainen, L. Pentti

    2015-11-01

    In this study, the effects of microalloying (Nb,V) and aluminum on the constitutive flow behavior and static recrystallization (SRX) characteristics of microalloyed TWIP steels (Fe-20Mn-0.6C-Al-(Nb,V)) have been investigated under hot deformation conditions. Compression tests in a Gleeble simulator, including the double-hit technique, enabled the acquisition of flow stress and recrystallization data. These were analyzed to determine the powers of strain and strain rate as well as the activation energies of deformation and recrystallization ( Q def and Q rex). Aluminum increased the flow stress and activation energy of deformation and delayed the onset of dynamic recrystallization of microalloyed TWIP steels. While microalloying with V up to 0.3 pct seems to have little or no effect on the SRX kinetics, microalloying with 0.026 pct Nb significantly slowed down the SRX rate, similarly as in the case of low C-Mn steels. Addition of high aluminum (4.9 pct) marginally retarded the SRX kinetics in comparison with the steels with low aluminum (1.5 pct), with or without microalloying with V.

  3. The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Choi, Sukwon; Heller, Eric; Dorsey, Donald; Vetury, Ramakrishna; Graham, Samuel

    2013-10-01

    Coupled electro-thermo-mechanical simulation and Raman thermometry were utilized to analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors (HEMTs). This combined analysis was correlated with electrical step stress tests to determine the influence of mechanical stress on the degradation of actual devices under diverse bias conditions. It was found that the total stress as opposed to one dominant stress component correlated the best with the degradation of the HEMT devices. These results suggest that minimizing the total stress as opposed to the inverse piezoelectric stress in the device is necessary in order to avoid device degradation which can be accomplished through various growth methods.

  4. Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Choi, Sukwon; Heller, Eric; Dorsey, Donald; Vetury, Ramakrishna; Graham, Samuel

    2013-03-01

    A comparative analysis of the residual stress distributions across the conductive channel of Ga-face AlGaN/GaN high electron mobility transistors (HEMTs) is presented. Stress was measured by means of micro-Raman spectroscopy and micro-photoluminescence (PL). Raman measurements probed the volume average of the stress through the GaN layer whereas the stress near the GaN surface (AlGaN/GaN heterointerface) was acquired via PL. By combining Raman, PL, and x-ray diffraction, a self-consistent method was developed to accurately determine the variation in magnitude of stress throughout the thickness of the GaN layer. Based on this framework, it is observed in AlGaN/GaN HEMTs that a depth variation in the GaN residual stress occurs near the gate and ohmic electrodes. At these regions, the stress near the AlGaN/GaN interface (or GaN surface) exhibits a tensile shift compared to the stress averaged through the entire thickness of GaN. Across the conductive channel (away from the metal pads), the bulk average stress and the stress near this interface remain nearly identical, showing little evidence of a vertical gradient. It is expected that the induced tensile strain at the drain side gate edge will have an impact on device reliability by contributing to the elastic energy built in the AlGaN barrier in addition to the inverse piezoelectric contribution at operating conditions, which may lead to formation of crystallographic defects.

  5. The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses

    NASA Astrophysics Data System (ADS)

    Ma, Xiao-Hua; Jiao, Ying; Ma, Ping; He, Qiang; Ma, Ji-Gang; Zhang, Kai; Zhang, Hui-Long; Zhang, Jin-Cheng; Hao, Yue

    2011-12-01

    In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors (HEMTs) still lack solid reliability. Devices under accelerated DC stress tests (off-state, VDS = 0 state, and on-state step-stress) are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] (Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415). However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.

  6. Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal-insulator-semiconductor high-electron mobility transistor for power applications

    NASA Astrophysics Data System (ADS)

    Hsieh, Ting-En; Lin, Yueh-Chin; Liao, Jen-Ting; Lan, Wei-Cheng; Chin, Ping-Chieh; Chang, Edward Yi

    2015-10-01

    We demonstrate an Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistor (MIS-HEMT) device with stable electrical properties under high-voltage stress, by using an Al2O3/AlN stack layer as the gate dielectric layer. Excellent quality AlN/Al2O3 GaN interface was obtained by using plasma-enhanced ALD (PE-ALD), resulting in a very low interface trap density (Dit) of ˜1.8 × 1011 eV-1 cm-2, obtained by using the conductance method. The device exhibits a small threshold voltage hysteresis of ˜200 mV and a lower gate-source leakage current. No obvious changes in the drain-source current and ON-resistance were observed for the device that was subject to the drain-source voltage stress of 100 V for 15 h.

  7. High-resolution stress mapping of Al 2O 3/monoclinic ZrO 2 and Al 2O 3/cubic ZrO 2(Y 2O 3) eutectics using scanning near-field optical microscopy

    NASA Astrophysics Data System (ADS)

    Fukura, S.; Kagi, H.; Nakai, M.; Sugiyama, K.; Fukuda, T.

    2009-01-01

    Scanning near-field optical microscopy (SNOM) technique was applied to nanometer-scale residual stress mapping for directionally solidified Al 2O 3/monochromic ZrO 2 and Al 2O 3/cubic ZrO 2(Y 2O 3) eutectics, which are ranked as candidates for high-strength materials at high temperatures. These eutectic composites were grown using the micro pulling down (?-PD) method with a radio frequency heating system. Topographic images and fluorescence spectra of those eutectic composites were measured simultaneously for each pixel on a sample. Its peak intensity, peak position, and peak width, which, respectively, correspond to the abundance of Al 2O 3, stress in the grain, and the anisotropy of that stress, were estimated for each fluorescence spectrum. The distribution of residual stress was observed on a sample surface with spatial resolution of 300 nm; the spatial resolution was constrained by the optical fiber aperture size. Tensile stress was observed in Al 2O 3 of Al 2O 3/mZrO 2 and compressive stress was observed in Al 2O 3 of Al 2O 3/cZrO 2. The stress distributions were visualized within a single Al 2O 3 grain. Considerable stress anisotropy was detected in the grain boundary between Al 2O 3 and ZrO 2 for both eutectics.

  8. Protective effects of andrographolide derivative AL-1 on high glucose-induced oxidative stress in RIN-m cells.

    PubMed

    Yan, Hui; Li, Yongmei; Yang, Yali; Zhang, Zaijun; Zhang, Gaoxiao; Sun, Yewei; Yu, Pei; Wang, Yuqiang; Xu, Lipeng

    2016-01-01

    AL-1 is a novel andrographolide derivative synthesized by conjugating andrographolide and alpha lipoic acid. AL-1 has been found to increase insulin secretion, decrease blood glucose level and protect ?-cell mass and function in alloxan-induced diabetic mouse model. However, the protective mechanism of AL-1 on high glucose-induced pancreatic ?-cell injury is still not clear. In the present study, we found that AL-1 reduced reactive oxygen species (ROS) and nitric oxide (NO) generation induced by high glucose in RIN-m cells, and which elevated the activities of superoxide dismutase (SOD) and catalase (CAT). In addition, AL-1 increased the expression of NF-E2-related factor 2 (Nrf2), thioredoxin-1 (Trx-1) and heme oxygenase-1 (HO- 1) proteins in RIN-m cells. These results suggest that AL-1 prevented RIN-m cells from high glucose-induced oxidative damage via upregulation of Nrf2 signaling pathway. PMID:26391852

  9. Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

    NASA Astrophysics Data System (ADS)

    Kim, Byung-Jae; Hwang, Ya-Hsi; Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Lu, Liu; Ren, Fan; Holzworth, M. R.; Jones, Kevin S.; Pearton, Stephen J.; Smith, David J.; Kim, Jihyun; Zhang, Ming-Lan

    2015-04-01

    The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing.

  10. Electron velocity of 6 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Arulkumaran, S.; Ng, G. I.; Manoj Kumar, C. M.; Ranjan, K.; Teo, K. L.; Shoron, O. F.; Rajan, S.; Bin Dolmanan, S.; Tripathy, S.

    2015-02-01

    A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In0.17Al0.83N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (Weff) exhibited a very high IDmax of 3940 mA/mm and a highest gm of 1417 mS/mm. This dramatic increase of ID and gm in the 3D TT-gate In0.17Al0.83N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (ve) of 6.0 107 cm/s, which is 1.89 higher than that of the conventional In0.17Al0.83N/GaN HEMT (3.17 107 cm/s). The ve in the conventional III-nitride transistors are typically limited by highly efficient optical-phonon emission. However, the unusually high ve at 300 K in the 3D TT-gate In0.17Al0.83N/GaN NC Fin-HEMT is attributed to the increase of in-plane tensile stress component by SiN passivation in the formed NC which is also verified by micro-photoluminescence (0.47 0.02 GPa) and micro-Raman spectroscopy (0.39 0.12 GPa) measurements. The ability to reach the ve = 6 107 cm/s at 300 K by a stress engineered 3D TT-gate lattice-matched In0.17Al0.83N/GaN NC Fin-HEMTs shows they are promising for next-generation ultra-scaled high-speed device applications.

  11. Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress

    NASA Astrophysics Data System (ADS)

    Lei, Shi; Shiwei, Feng; Kun, Liu; Yamin, Zhang

    2015-07-01

    The phenomenon of self-changing on the device parameters and characteristics after a step voltage stress was applied to the gate is studied in AlGaN/GaN high electron mobility transistors. The device was measured every 5 min after the stress was removed. The large-signal parasitic source (drain) resistance, transfer characteristics, threshold voltage, drain-source current, gate-source (drain) reverse current-voltage characteristics changed spontaneously after the removal of the stress. The time constant of the self-changing was about 25-27 min. The gate-source (drain) capacitance-voltage characteristics were constant during this process. Electrons were trapped by the surface states and traps in the AlGaN barrier layer when the device was under stress. The traps in the AlGaN barrier layer then released electrons in less than 10 s. The surface states released electrons continuously during the entire measurement stage, leading to the self-changing of mearsurement result. Project supported by the National Natural Science Foundation of China (Nos. 61376077, 61201046, 61204081), and the Beijing Natural Science Foundation (Nos. 4132022, 4122005).

  12. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    NASA Astrophysics Data System (ADS)

    Anand, M. J.; Ng, G. I.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.; Syamal, B.; Zhou, X.

    2015-02-01

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-RDS[ON]) and threshold-voltage shift (?Vth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current (ID) transients. Different EF was realized with devices of different gate-drain spacing (Lgd) under the same OFF-state stress. Under high-EF (Lgd = 2 ?m), the devices exhibited higher dyn-RDS[ON] degradation but a small ?Vth (120 mV). However, at low-EF (Lgd = 5 ?m), smaller dyn-RDS[ON] degradation but a larger ?Vth (380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-RDS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ?Vth. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by ID-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

  13. High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

    SciTech Connect

    Cheng, Jianpeng; Yang, Xuelin Sang, Ling; Guo, Lei; Hu, Anqi; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo

    2015-04-06

    A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm{sup 2}/(V·s) at sheet charge density of 8.4 × 10{sup 12 }cm{sup −2}. Strain relaxation and dislocation evolution mechanisms have been investigated. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer. Our results show a great potential for fabrication of low-cost and high performance GaN-on-Si power devices.

  14. Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

    SciTech Connect

    Chen, Wei-Wei; Ma, Xiao-Hua E-mail: yhao@xidian.edu.cn; Hou, Bin; Zhu, Jie-Jie; Chen, Yong-He; Zheng, Xue-Feng; Zhang, Jin-Cheng; Hao, Yue E-mail: yhao@xidian.edu.cn

    2014-10-27

    Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors are investigated. The gate leakage current decreases significantly upon removing the SiN layer and no clear critical voltage for the sudden degradation of the gate leakage current can be observed in the reverse-bias step-stress experiments. Gate-lag measurements reveal the decrease of the fast-state surface traps and the increase of slow-state traps after the passivation layer removal. It is postulated that consistent surface charging relieves the electric field peak on the gate edge, thus the inverse piezoelectric effect is shielded.

  15. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    SciTech Connect

    Anand, M. J. E-mail: eging@ntu.edu.sg; Ng, G. I. E-mail: eging@ntu.edu.sg; Syamal, B.; Zhou, X.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.

    2015-02-23

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-R{sub DS[ON]}) and threshold-voltage shift (?V{sub th}) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I{sub DS}-V{sub DS}) and drain current (I{sub D}) transients. Different EF was realized with devices of different gate-drain spacing (L{sub gd}) under the same OFF-state stress. Under high-EF (L{sub gd}?=?2??m), the devices exhibited higher dyn-R{sub DS[ON]} degradation but a small ?V{sub th} (?120?mV). However, at low-EF (L{sub gd}?=?5??m), smaller dyn-R{sub DS[ON]} degradation but a larger ?V{sub th} (?380?mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R{sub DS[ON]} degradation, whereas under low-EF, trapping is mostly confined under the gate causing ?V{sub th}. A trap with activation energy 0.33?eV was identified in the AlGaN barrier by I{sub D}-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

  16. Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

    SciTech Connect

    Sun, Huarui Bajo, Miguel Montes; Uren, Michael J.; Kuball, Martin

    2015-01-26

    Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage “hot spots” at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7–0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which is consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites.

  17. Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

    NASA Astrophysics Data System (ADS)

    Zeng, Chang; Liao, XueYang; Li, RuGuan; Wang, YuanSheng; Chen, Yiqiang; Su, Wei; Liu, Yuan; Wang, Li Wei; Lai, Ping; Huang, Yun; En, YunFei

    2015-09-01

    In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Based on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress.

  18. Stress evolution during ultrasonic Al ribbon bonding

    NASA Astrophysics Data System (ADS)

    Ando, Masaya; Takashima, Kazumasa; Maeda, Masakatsu; Takahashi, Yasuo

    2014-08-01

    The present study reveals the stress distribution in the substrate during ultrasonic bonding. The deformations of the Si substrate, Al ribbon, and Al pad were numerically analyzed using a finite element method. Experimental observation of the interface using a highspeed video camera was also conducted to determine the actual interfacial slip amplitude. This amplitude becomes smaller than that of tool-tip with bonding time. It was suggested from the numerical simulations that frictional adhesion enhanced the friction force, resulting in an increase in the equivalent stress in the ribbon and pad. As a result, very large stresses occur in the substrate during ultrasonic bonding. These stresses evolve with the progress of ultrasonic bonding, i.e., frictional adhesion.

  19. ALS and Oxidative Stress: The Neurovascular Scenario

    PubMed Central

    Thakur, Keshav; Gupta, Pawan Kumar

    2013-01-01

    Oxidative stress and angiogenic factors have been placed as the prime focus of scientific investigations after an establishment of link between vascular endothelial growth factor promoter (VEGF), hypoxia, and amyotrophic lateral sclerosis (ALS) pathogenesis. Deletion of the hypoxia-response element in the vascular endothelial growth factor promoter and mutant superoxide dismutase 1 (SOD1) which are characterised by atrophy and muscle weakness resulted in phenotype resembling human ALS in mice. This results in lower motor neurodegeneration thus establishing an important link between motor neuron degeneration, vasculature, and angiogenic molecules. In this review, we have presented human, animal, and in vitro studies which suggest that molecules like VEGF have a therapeutic, diagnostic, and prognostic potential in ALS. Involvement of vascular growth factors and hypoxia response elements also highlights the converging role of oxidative stress and neurovascular network for understanding and treatment of various neurodegenerative disorders like ALS. PMID:24367722

  20. Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress

    NASA Astrophysics Data System (ADS)

    Jesudas Anand, Mulagumoottil; Ng, Geok Ing; Arulkumaran, Subramaniam; Syamal, Binit; Zhou, Xing

    2015-10-01

    The distribution of trap energy (DTE) levels was observed in the energy band gap of buffer GaN by temperature-dependent current transient measurements on AlGaN/GaN HEMTs under fully ON drain-stress (VD[ON]_Stress) conditions. The activation energies (Eas) obtained from current transients increase with increasing VD[ON]_Stress. Using a multitrap energy (MTE) model, the applied-VD[ON]_Stress-dependent Ea is attributed to DTE levels in the GaN energy band gap, rather than to discrete single trap energy levels. An effective activation energy (Ea_eff) corresponding to trap energy levels activated by the applied VD[ON]_Stress is thus obtained. This observation is validated with two-dimensional numerical simulations. This study will help device designers develop a DTE-dependent emission time constant model that is readily applicable for the reliability modelling of future GaN-based circuits.

  1. Yield stress anomaly in B2 FeAl

    SciTech Connect

    Yoshimi, K.; Hanada, S.; Yoo, M.H.

    1996-12-31

    The studies on yield stress anomaly of B2 FeAl single crystals are reviewed in this paper. A positive temperature dependence of yield stress, so-called yield stress anomaly, is observed in B2 FeAl in which excess vacancies are fully annealed out. Associated with the anomaly, characteristic asymmetry is found between tension and compression. While the strain-rate sensitivity is almost zero in the temperature range of the yield stress anomaly, the stress relaxation becomes significant with increasing temperature, indicating that a recovery process is thermally activated. It is ascertained by the two-surface trace analysis that slip transition from <111> direction at intermediate temperature to <100> at high temperature occurs around the peak temperature. Even at the peak temperature, in addition, operative slip vector for yielding is confirmed to be predominantly <111> by TEM. Also, it is observed that <111>-type superdislocations are frequently climb-dissociated in the temperature range of the anomaly. APB formation on {l_brace}111{r_brace} plane is energetically favorable, which is in agreement with the Flinn`s calculation for the B2 superlattice that APB energy on {l_brace}111{r_brace} plane is lower than that on {l_brace}110{r_brace} plane. Such an anisotropy of APB energy would offer specific driving force for the climb dissociation on <111> superdislocations. On the basis of the observed results, the anomalous strengthening behavior of B2 FeAl single crystals is discussed.

  2. Fatigue crack growth at high R ratio in Ti-6Al-4V at 1.5kHz: The effect of periodic removal of mean stress

    SciTech Connect

    Davidson, D.L.

    1999-07-01

    The components of gas turbine engines operate at high mean stresses due to the centrifugal loads caused by high rotational speeds. The turbine blades also have vibratory stresses that are superimposed on the mean stresses. Any fatigue problems that are experienced by turbine blades are driven by the vibratory stresses, but fatigue phenomena are also well known to depend strongly on mean stress effects. Here, fatigue cracks were grown under high mean stress at {approx}1.5 kHz at rates of 10{sup {minus}10} to 10{sup {minus}12} m/cycle within the scanning electron microscope in vacuum. Periodically, mean stress was removed, then reapplied, and the effect on subsequent crack growth rate was measured. This process has been called HCF/LCF interaction. Detailed crack tip micromechanics analyses were made of these load interactions. The only HCF/LCF effect detected was less than a factor of ten change in crack growth rate, in agreement with expectations from the micromechanics analysis, and previous experimental results in air.

  3. Local stress-induced effects on AlGaAs/AlOx oxidation front shape

    NASA Astrophysics Data System (ADS)

    Chouchane, F.; Almuneau, G.; Cherkashin, N.; Arnoult, A.; Lacoste, G.; Fontaine, C.

    2014-07-01

    The lateral oxidation of thick AlGaAs layers (>500 nm) is studied. An uncommon shape of the oxide tip is evidenced and attributed to the embedded stress distribution, inherent to the oxidation reaction. Experimental and numerical studies of the internal strain in oxidized AlxGa1-xAs/GaAs structures were carried out by dark-field electron holography and finite element methods. A mapping of the strain distribution around the AlGaAs/oxide interface demonstrates the main role of internal stress on the shaping of the oxide front. These results demonstrate the high relevance of strain in oxide-confined III-V devices, in particular, with over-500-nm thick AlOx confinement layers.

  4. Surface Residual Stresses in Ti-6Al-4V Friction Stir Welds: Pre- and Post-Thermal Stress Relief

    NASA Astrophysics Data System (ADS)

    Edwards, P.; Ramulu, M.

    2015-09-01

    The purpose of this study was to determine the residual stresses present in titanium friction stir welds and if a post-weld thermal stress relief cycle would be effective in minimizing those weld-induced residual stresses. Surface residual stresses in titanium 6Al-4V alloy friction stir welds were measured in butt joint thicknesses ranging from 3 to 12 mm. The residual stress states were also evaluated after the welds were subjected to a post-weld thermal stress relief cycle of 760 °C for 45 min. High (300-400 MPa) tensile residual stresses were observed in the longitudinal direction prior to stress relief and compressive residual stresses were measured in the transverse direction. After stress relief, the residual stresses were decreased by an order of magnitude to negligible levels.

  5. On the effect of deep-rolling and laser-peening on the stress-controlled low- and high-cycle fatigue behavior of Ti-6Al-4V at elevated temperatures up to 550?C

    SciTech Connect

    Ritchie, IAltenberger, RKNalla, YSano LWagner, RO

    2012-04-01

    The effect of surface treatment on the stress/life fatigue behavior of a titanium Ti-6Al-4V turbine fan blade alloy is investigated in the regime of 102 to 106 cycles to failure under fully reversed stress-controlled isothermal push-pull loading between 25? and 550?C at a frequency of 5 Hz. Specifically, the fatigue behavior was examined in specimens in the deep-rolled and laser-shock peened surface conditions, and compared to results on samples in the untreated (machined and stress annealed) condition. Although the fatigue resistance of the Ti-6Al-4V alloy declined with increasing test temperature regardless of surface condition, deep-rolling and laser-shock peening surface treatments were found to extend the fatigue lives by factors of more than 30 and 5-10, respectively, in the high-cycle and low-cycle fatigue regimes at temperatures as high as 550?C. At these temperatures, compressive residual stresses are essentially relaxed; however, it is the presence of near-surface work hardened layers, with a nanocystalline structure in the case of deep-rolling and dense dislocation tangles in the case of laser-shock peening, which remain fairly stable even after cycling at 450?-550?C, that provide the basis for the beneficial role of mechanical surface treatments on the fatigue strength of Ti-6Al-4V at elevated temperatures.

  6. Stress-strain behavior of fine-grained Al/Al[sub 3]Ti alloys

    SciTech Connect

    Wang, S.H.; Kao, P.W.; Chang, C.P. )

    1993-08-01

    It has been recognized that dispersion strengthening with hard, stable, high melting point phases offers an effective technique for improving the stiffness of aluminum alloys over a wider temperature range compared to precipitation strengthening. Recent research indicates that mechanically alloyed (MA) Al-Ti alloys have good ambient and elevated temperature properties. The MA Al-Ti alloys are characterized by the presence of large volume fractions of submicron sized Al[sub 3]Ti dispersoids within a fine grain aluminum matrix. In addition, such alloys contain a significant amount of ultrafine Al[sub 4]C[sub 3] and Al[sub 2]O[sub 3] dispersoids incorporated during the MA process. The carbide and oxide dispersoids reside mainly along grain boundaries and can stabilize a fine-grain structure even after long term exposure at elevated temperature. The high temperature strength of these MA aluminum alloys is strongly controlled by carbide and oxide dispersoids. The Young's modulus of Al[sub 3]Ti phase was determined to be about 220 GPa. Hence, the presence of the Al[sub 3]Ti phase is very effective in increasing the stiffness of the MA aluminum alloys is strongly controlled by carbide and oxide dispersoids. The Young's modulus of Al[sub 3]Ti phase was determined to be about 220 GPa. Hence, the presence of the Al[sub 3]Ti phase is very effective in increasing the stiffness of the MA aluminum alloys. The strength of such alloys increases with increasing Al[sub 3]Ti content; however, the strengthening effect of Al[sub 3]Ti dispersoids diminishes at temperatures above about 400C. On the other hand, such dispersoids also appear responsible for improving the high temperature ductility of the MA Al-Ti alloys. A better understanding of the strengthening mechanisms is desirable. This paper presents the room temperature stress-strain behavior of two Al-Al[sub 3]Ti alloys made by mechanical alloying and hot-pressing.

  7. ER Dysfunction and Protein Folding Stress in ALS

    PubMed Central

    Matus, Soledad; Valenzuela, Vicente; Medinas, Danilo B.; Hetz, Claudio

    2013-01-01

    Amyotrophic lateral sclerosis (ALS) is the most frequent paralytic disease in adults. Most ALS cases are considered sporadic with no clear genetic component. The disruption of protein homeostasis due to chronic stress responses at the endoplasmic reticulum (ER) and the accumulation of abnormal protein inclusions are extensively described in ALS mouse models and patient-derived tissue. Recent studies using pharmacological and genetic manipulation of the unfolded protein response (UPR), an adaptive reaction against ER stress, have demonstrated a complex involvement of the pathway in experimental models of ALS. In addition, quantitative changes in ER stress-responsive chaperones in body fluids have been proposed as possible biomarkers to monitor the disease progression. Here we review most recent advances attributing a causal role of ER stress in ALS. PMID:24324498

  8. ER Dysfunction and Protein Folding Stress in ALS.

    PubMed

    Matus, Soledad; Valenzuela, Vicente; Medinas, Danilo B; Hetz, Claudio

    2013-01-01

    Amyotrophic lateral sclerosis (ALS) is the most frequent paralytic disease in adults. Most ALS cases are considered sporadic with no clear genetic component. The disruption of protein homeostasis due to chronic stress responses at the endoplasmic reticulum (ER) and the accumulation of abnormal protein inclusions are extensively described in ALS mouse models and patient-derived tissue. Recent studies using pharmacological and genetic manipulation of the unfolded protein response (UPR), an adaptive reaction against ER stress, have demonstrated a complex involvement of the pathway in experimental models of ALS. In addition, quantitative changes in ER stress-responsive chaperones in body fluids have been proposed as possible biomarkers to monitor the disease progression. Here we review most recent advances attributing a causal role of ER stress in ALS. PMID:24324498

  9. Degradation analysis and characterization of multifilamentary conduction patterns in high-field stressed atomic-layer-deposited TiO2/Al2O3 nanolaminates on GaAs

    NASA Astrophysics Data System (ADS)

    Miranda, E.; Suñé, J.; Das, T.; Mahata, C.; Maiti, C. K.

    2012-09-01

    In this paper, the effects of applying a high-field electrical stress on TiO2/Al2O3 nanolaminates grown by atomic layer deposition onto a p-type GaAs substrate are investigated. First, it is shown that the current-time (I-t) characteristic of the devices during a constant voltage stress follows the extended Curie-von Schweidler law for dielectric degradation. The application of voltage sweeps from negative to positive bias and back also reveals an hysteretic behavior of the current-voltage (I-V) characteristic typical of the resistive switching mechanism ocurring in these and others high permittivity oxide films. Second, we show that after the detection of the breakdown event the capacitors exhibit a random spot pattern on the top metal electrode (Al) associated with the generation of multifilamentary conduction paths running across the insulating film. The number of generated spots depends on the magnitude of the electrical stress and for a sufficiently large density, it is possible to demonstrate that they are spatially uncorrelated. The analysis is carried out using spatial statistics techniques such as the intensity plot, the interspot distance histogram, and the pair correlation function.

  10. Clinical Perspective of Oxidative Stress in Sporadic ALS

    PubMed Central

    D’Amico, Emanuele; Factor-Litvak, Pam; Santella, Regina M.; Mitsumoto, Hiroshi

    2013-01-01

    Sporadic amyotrophic lateral sclerosis (sALS) is one of the most devastating neurological diseases; most patients die within 3 to 4 years after symptom onset. Oxidative stress is a disturbance in the pro-oxidative/anti-oxidative balance favoring the pro-oxidative state. Autopsy and laboratory studies in ALS indicate that oxidative stress plays a major role in motor neuron degeneration and astrocyte dysfunction. Oxidative stress biomarkers in cerebrospinal fluid, plasma, and urine, are elevated, suggesting that abnormal oxidative stress is generated outside of the central nervous system. Our review indicates that agricultural chemicals, heavy metals, military service, professional sports, excessive physical exertion, chronic head trauma, and certain foods might be modestly associated with ALS risk, with a stronger association between risk and smoking. At the cellular level, these factors are all involved in generating oxidative stress. Experimental studies indicate that a combination of insults that induce modest oxidative stress can exert additive deleterious effects on motor neurons, suggesting multiple exposures in real-world environments are important. As the disease progresses, nutritional deficiency, cachexia, psychological stress, and impending respiratory failure may further increase oxidative stress. Moreover, accumulating evidence suggests that ALS is possibly a systemic disease. Laboratory, pathologic, and epidemiologic evidence clearly support the hypothesis that oxidative stress is central in the pathogenic process, particularly in genetically susceptive individuals. If we are to improve ALS treatment, well-designed biochemical and genetic epidemiological studies, combined with a multidisciplinary research approach, are needed and will provide knowledge crucial to our understanding of ALS etiology, pathophysiology, and prognosis. PMID:23797033

  11. Electron velocity of 6 × 10{sup 7 }cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

    SciTech Connect

    Arulkumaran, S. Manoj Kumar, C. M.; Ranjan, K.; Teo, K. L.; Ng, G. I.; Shoron, O. F.; Rajan, S.; Bin Dolmanan, S.; Tripathy, S.

    2015-02-02

    A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In{sub 0.17}Al{sub 0.83}N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (W{sub eff}) exhibited a very high I{sub Dmax} of 3940 mA/mm and a highest g{sub m} of 1417 mS/mm. This dramatic increase of I{sub D} and g{sub m} in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (v{sub e}) of 6.0 × 10{sup 7 }cm/s, which is ∼1.89× higher than that of the conventional In{sub 0.17}Al{sub 0.83}N/GaN HEMT (3.17 × 10{sup 7 }cm/s). The v{sub e} in the conventional III-nitride transistors are typically limited by highly efficient optical-phonon emission. However, the unusually high v{sub e} at 300 K in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT is attributed to the increase of in-plane tensile stress component by SiN passivation in the formed NC which is also verified by micro-photoluminescence (0.47 ± 0.02 GPa) and micro-Raman spectroscopy (0.39 ± 0.12 GPa) measurements. The ability to reach the v{sub e} = 6 × 10{sup 7 }cm/s at 300 K by a stress engineered 3D TT-gate lattice-matched In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMTs shows they are promising for next-generation ultra-scaled high-speed device applications.

  12. Stress Development and Relaxation in Al2O3 during Early StageOxidation of beta-NiAl

    SciTech Connect

    Hou, P.Y.; Paulikas, A.P.; Veal, B.W.

    2005-04-20

    Using a glancing synchrotron X-ray beam (Advanced Photon Source, Beamline 12BM, Argonne National Laboratory), Debye-Scherrer diffraction patterns from thermally grown oxides on NiAl samples were recorded during oxidation at 1000 or 1100 C in air. The diffraction patterns were analyzed to determine strain and phase changes in the oxide scale as it developed and evolved. Strain was obtained from measurements of the elliptical distortion of the Debye-Scherrer rings, where data from several rings of a single phase were used. Results were obtained from {alpha}-Al{sub 2}O{sub 3} as well as from the transition alumina, in this case {theta}-Al{sub 2}O{sub 3}, which formed during the early stage. Compressive stress was found in the first-formed transition alumina, but the initial stress in {alpha}-Al{sub 2}O{sub 3} was tensile, with a magnitude high enough to cause Al{sub 2}O{sub 3} fracture. New {alpha}-Al{sub 2}O{sub 3} patches nucleated at the scale/alloy interface and spread laterally and upward. This transformation not only puts the alpha alumina in tension, but can also cause the transition alumina to be in tension. After a complete {alpha}-Al{sub 2}O{sub 3} layer formed at the interface, the strain level in {alpha}-Al{sub 2}O{sub 3} became compressive, reaching a steady state level around -75 MPa at 1100 C. To study a specimen's response to stress perturbation, samples with different thickness, after several hours of oxidation at 1100 C, were quickly cooled to 950 C to impose a compressive thermal stress in the scale. The rate of stress relaxation was the same for 1 and 3.5 mm thick samples, having a strain rate of {approx} 1 x 10{sup -8}/s. This behavior indicates that oxide creep is the major stress relaxation mechanism.

  13. Sleep in High Stress Occupations

    NASA Technical Reports Server (NTRS)

    Flynn-Evans, Erin

    2014-01-01

    High stress occupations are associated with sleep restriction, circadian misalignment and demanding workload. This presentation will provide an overview of sleep duration, circadian misalignment and fatigue countermeasures and performance outcomes during spaceflight and commercial aviation.

  14. Stress relaxation and electromigration confined Al(Cu) line structures

    NASA Astrophysics Data System (ADS)

    Moske, M. A.; Ho, P. S.; Hu, C. K.; Small, M. B.

    1992-08-01

    The confinement of interconnect lines by a dielectric layer gives rise to a triaxial stress state in the line structure. Relaxation of the stress under operating conditions can lead to void formation in fine lines. The principal stress components and their relaxation behavior have been determined in Al(Cu) line structures passivated by a quartz dielectric layer on a Si substrate. This was carried out using a bending beam method to measure the thermal deformation of periodic line structures with parallel and perpendicular line configurations. By analyzing the mechanics of quartz confinement, we are able to deduce the magnitude and relaxation behavior of the three principal stress components. Results of the measurements are consistent with those determined using X-ray techniques, showing a substantial stress enhancement as a result of quartz confinement. The stress relaxation behavior is characterized by a two-stage process, first with fast followed by slow kinetics. The results are attributed to the relaxation mechanism and interaction at the metal-dielectric interface. Electromigration can also generate stress in a metal line with a finite length, which has been measured for Al(Cu) fine lines using a drift velocity technique. The stress induced by electromigration was found to be comparable to the thermal stress. The implications on void formation are discussed.

  15. High Temperature Mechanical Characterization and Analysis of Al2O3 /Al2O3 Composition

    NASA Technical Reports Server (NTRS)

    Gyekenyesi, John Z.; Jaskowiak, Martha H.

    1999-01-01

    Sixteen ply unidirectional zirconia coated single crystal Al2O3 fiber reinforced polycrystalline Al2O3 was tested in uniaxial tension at temperatures to 1400 C in air. Fiber volume fractions ranged from 26 to 31%. The matrix has primarily open porosity of approximately 40%. Theories for predicting the Young's modulus, first matrix cracking stress, and ultimate strength were applied and evaluated for suitability in predicting the mechanical behavior of Al2O3/Al2O3 composites. The composite exhibited pseudo tough behavior (increased area under the stress/strain curve relative to monolithic alumina) from 22 to 1400 C. The rule-of-mixtures provides a good estimate of the Young's modulus of the composite using the constituent properties from room temperature to approximately 1200 C for short term static tensile tests in air. The ACK theory provides the best approximation of the first matrix cracking stress while accounting for residual stresses at room temperature. Difficulties in determining the fiber/matrix interfacial shear stress at high temperatures prevented the accurate prediction of the first matrix cracking stress above room temperature. The theory of Cao and Thouless, based on Weibull statistics, gave the best prediction for the composite ultimate tensile strength.

  16. Profilin 1 Associates with Stress Granules and ALS-Linked Mutations Alter Stress Granule Dynamics

    PubMed Central

    Figley, Matthew D.; Bieri, Gregor; Kolaitis, Regina-Maria; Taylor, J. Paul

    2014-01-01

    Mutations in the PFN1 gene encoding profilin 1 are a rare cause of familial amyotrophic lateral sclerosis (ALS). Profilin 1 is a well studied actin-binding protein but how PFN1 mutations cause ALS is unknown. The budding yeast, Saccharomyces cerevisiae, has one PFN1 ortholog. We expressed the ALS-linked profilin 1 mutant proteins in yeast, demonstrating a loss of protein stability and failure to restore growth to profilin mutant cells, without exhibiting gain-of-function toxicity. This model provides for simple and rapid screening of novel ALS-linked PFN1 variants. To gain insight into potential novel roles for profilin 1, we performed an unbiased, genome-wide synthetic lethal screen with yeast cells lacking profilin (pfy1Δ). Unexpectedly, deletion of several stress granule and processing body genes, including pbp1Δ, were found to be synthetic lethal with pfy1Δ. Mutations in ATXN2, the human ortholog of PBP1, are a known ALS genetic risk factor and ataxin 2 is a stress granule component in mammalian cells. Given this genetic interaction and recent evidence linking stress granule dynamics to ALS pathogenesis, we hypothesized that profilin 1 might also associate with stress granules. Here we report that profilin 1 and related protein profilin 2 are novel stress granule-associated proteins in mouse primary cortical neurons and in human cell lines and that ALS-linked mutations in profilin 1 alter stress granule dynamics, providing further evidence for the potential role of stress granules in ALS pathogenesis. PMID:24920614

  17. Reduction of Residual Stress and Improvement of Dimensional Accuracy by Uphill Quenching for Al6061 Tube

    NASA Astrophysics Data System (ADS)

    Lim, Hak-Jin; Ko, Dae-Hoon; Ko, Dae-Cheol; Kim, Byung-Min

    2014-04-01

    The purpose of this study is to reduce the residual stress and machining distortion of an Al6061 tube by using uphill quenching. During uphill quenching, solid-solution heat-treated aluminum parts are usually immersed in LN2 at 77 K (-196 C), followed by the rapid heating of the parts, to produce a new residual stress that is opposite in nature to the original. The uphill quenching method used in this study employed two types of heating methods: boiling water at 373 K (100 C) and high-velocity steam at 448 K (175 C). First, FE-simulation coupled with a CFD analysis was performed to predict the residual stress of the backward hot-extruded Al6061 tube with the following dimensions: 200 mm h200 mm t10 mm. Experiment of uphill quenching was also conducted to measure the residual stress using the boiling water and high-velocity steam uphill quenching methods. The predicted residual stresses were compared with the experimental results obtained via micro-indentation and saw-cutting tests, and a deviation of about 10.4 pct was found. In addition, the experimental results showed that uphill quenching could relieve up to 91 pct of the residual stress induced by water quenching. Finally, the dimensional accuracy of uphill quenched tubes was evaluated by measuring the roundness after the machining process, which showed that the uphill quenching method could improve the dimensional accuracy of an Al6061 tube by reducing the residual stress.

  18. Commentary: Beyond Stressful Life Events and Depression?--Reflections on Bogdan et al. (2014)

    ERIC Educational Resources Information Center

    Belsky, Jay

    2014-01-01

    In light of continuing disagreement, even at the meta-analytic level, as to whether the gene-נ-environment (GE) interaction involving 5-HTTLPR and stressful life events (SLEs) predicts depression, Bogdan and associates (this issue, Bogdan etal., 2014) sought to extend research on what has become a highly controversial general (GxE) and

  19. TRANSCRIPTIONAL ANALYSIS BETWEEN TWO WHEAT NEAR-ISOGENIC LINES CONTRASTING IN ALUMINUM (AL) TOLERANCE UNDER AL STRESS

    Technology Transfer Automated Retrieval System (TEKTRAN)

    To understand the mechanisms of aluminum (Al) tolerance and identify genes responsible for Al tolerance in wheat (Triticum aestivum L.), suppression subtractive hybridization (SSH) libraries were constructed from Al-stressed roots for two wheat near- isogenic lines (NILs), Chisholm-T (Al-tolerant) a...

  20. Alloys based on NiAl for high temperature applications

    NASA Technical Reports Server (NTRS)

    Vedula, K. M.; Pathare, V.; Aslanidis, I.; Titran, R. H.

    1984-01-01

    The NiAl alloys for potential high temperature applications were studied. Alloys were prepared by powder metallurgy techniques. Flow stress values at slow strain rates and high temperatures were measured. Some ternary alloying additions (Hf, Ta and Nb) were identified. The mechanism of strengthening in alloys containing these additions appears to be a form of particle dislocation interaction. The effects of grain size and stoichiometry in binary alloys are also presented.

  1. Alloys based on NiAl for high temperature applications

    NASA Technical Reports Server (NTRS)

    Vedula, K.; Pathare, V.; Aslanidis, I.; Titran, R. H.

    1985-01-01

    The NiAl alloys for potential high temperature applications were studied. Alloys were prepared by powder metallurgy techniques. Flow stress values at slow strain rates and high temperatures were measured. Some ternary alloying additions (Hf, Ta and Nb) were identified. The mechanism of strengthening in alloys containing these additions appears to be a form of particle dislocation interaction. The effects of grain size and stoichiometry in binary alloys are also presented.

  2. RBM45 homo-oligomerization mediates association with ALS-linked proteins and stress granules

    PubMed Central

    Li, Yang; Collins, Mahlon; Geiser, Rachel; Bakkar, Nadine; Riascos, David; Bowser, Robert

    2015-01-01

    The aggregation of RNA-binding proteins is a pathological hallmark of amyotrophic lateral sclerosis (ALS) and frontotemporal lobar degeneration (FTLD). RBM45 is an RNA-binding protein that forms cytoplasmic inclusions in neurons and glia in ALS and FTLD. To explore the role of RBM45 in ALS and FTLD, we examined the contribution of the protein’s domains to its function, subcellular localization, and interaction with itself and ALS-linked proteins. We find that RBM45 forms homo-oligomers and physically associates with the ALS-linked proteins TDP-43 and FUS in the nucleus. Nuclear localization of RBM45 is mediated by a bipartite nuclear-localization sequence (NLS) located at the C-terminus. RBM45 mutants that lack a functional NLS accumulate in the cytoplasm and form TDP-43 positive stress granules. Moreover, we identify a novel structural element, termed the homo-oligomer assembly (HOA) domain, that is highly conserved across species and promote homo-oligomerization of RBM45. RBM45 mutants that fail to form homo-oligomers exhibit significantly reduced association with ALS-linked proteins and inclusion into stress granules. These results show that RMB45 may function as a homo-oligomer and that its oligomerization contributes to ALS/FTLD RNA-binding protein aggregation. PMID:26391765

  3. Finite Element Analysis of Stress Evolution in Al-Si Alloy

    NASA Astrophysics Data System (ADS)

    Joseph, Sudha; Kumar, S.

    2015-01-01

    A 2D multi-particle model is carried out to understand the effect of microstructural variations and loading conditions on the stress evolution in Al-Si alloy under compression. A total of six parameters are varied to create 26 idealized microstructures: particle size, shape, orientation, matrix temper, strain rate, and temperature. The effect of these parameters is investigated to understand the fracture of Si particles and the yielding of Al matrix. The Si particles are modeled as a linear elastic solid and the Al matrix is modeled as an elasto-plastic solid. The results of the study demonstrate that the increase in particle size decreases the yield strength of the alloy. The particles with high aspect ratio and oriented at 0 and 90 to the loading axis show higher stress values. This implies that the particle shape and orientation are dominant factors in controlling particle fracture. The heat treatment of the alloy is found to increase the stress levels of both particles and matrix. Stress calculations also show that higher particle fracture and matrix yielding is expected at higher strain rate deformation. Particle fracture decreases with increase in temperature and the Al matrix plays an important role in controlling the properties of the alloy at higher temperatures. Further, this strain rate and temperature dependence is more pronounced in the heat-treated microstructure. These predictions are consistent with the experimentally observed Si particle fracture in real microstructure.

  4. Thermal stresses and electromigration behaviors of Al/low kappa polymer interconnect structures

    NASA Astrophysics Data System (ADS)

    Wang, Pei-Hua

    The National Technology Roadmap for Semiconductors calls for an increase of functionality and an improvement in performance for every technology generation. For back-end-of-line integration, low dielectric constant materials have been explored to improve on-chip performance in the areas of signal propagation speed, cross-talk noise, and power dissipation. A leading group of candidates for dielectric constant kappa < 3 has been polymeric dielectrics which show promising results both electrically and mechanically. Yet, the integrity and reliability of the Al/polymer multilayer wiring structures are not fully understood. Structural integrity issues stem from the thermal expansion and mechanical modulus mismatch between metal and polymer. Compounding the problem is the different role the polymer plays in passivation compared to oxide. Finite element modeling and X-ray stress measurement were employed to understand the stress level in the metal under different polymer passivations. In the Al/oxide case, a near hydrostatic stress state has been found in the passivated line structure. This high stress induces void formation and causes reliability problems. For the Al/polymer case, a significantly reduced stress level is found in the metal, however a large shear strain is observed in the dielectric near the metal line corners. This may cause structural integrity problems during processing. Electromigration lifetime testing was used to characterize the reliability of TEOS and a low kappa polymer, poly(arylene ether) (PAE) passivated lines. A longer lifetime was found for PAE passivated lines due to improved Al microstructure induced by the polymer curing step which also anneals the Al. A different electromigration damage mode was observed in PAE passivated lines which can be attributed to the compliant nature of polymeric materials.

  5. Stress corrosion cracking of an Al-Li alloy

    NASA Astrophysics Data System (ADS)

    Wang, Z. F.; Zhu, Z. Y.; Zhang, Y.; Ke, W.

    1992-12-01

    Stress corrosion cracking (SCC) has been studied in an Al-Li alloy with variables of orientation of specimen, heat treatment, and applied potentials. The distribution of the electrochemical potential resulting from precipitate clusters was measured, and the hydrogen content on the specimen surface was detected. The results showed that the SCC susceptibility under the peak- aged (PA) condition was higher than that under the natural (NA) and overaged (OA) conditions. The transverse (TL) specimen was more susceptible to SCC propagation than the longitudinal (LT) specimen. The SCC susceptibility and the hydrogen content on the specimen surface were dependent on the applied potentials. The hydrogen content increased when the applied potential changed to positive or negative directions. There was a critical hydrogen content, below which local anodic dissolution (LAD) plays an important role, above which hydrogen embrittlement (HE) plays an important role.

  6. Fractography of Stress Corrosion Cracking of Mg-Al Alloys

    NASA Astrophysics Data System (ADS)

    Winzer, Nicholas; Atrens, A.; Dietzel, W.; Song, G.; Kainer, K. U.

    2008-05-01

    Mechanisms for the stress corrosion cracking (SCC) of Mg-Al alloys have been investigated by scanning electron microscopy (SEM) of the fracture surfaces, for the two-phase alloy AZ91 and the single-phase alloys AZ31 and AM30 in distilled water. The mechanism for crack initiation in AZ31 and AM30 involves localized dissolution. The mechanisms for crack propagation in AZ31 and AM30 involve microvoid coalescence and cleavage, respectively. The mechanism for crack initiation in AZ91 is unclear, but may involve the fracture of ? particles near the surface. The mechanism for crack propagation at moderate strain rates in AZ91 is similar to that in AZ31, with ? particles acting as sources of H for mobile dislocations. The fracture surface for AZ91 tested at the strain rate 3 10-8 s-1 was similar to that for specimens precharged in gaseous H2. This fracture surface is the result of (1) the nucleation and growth of MgH2 particles, (2) sudden fracture through the MgH2 particles at some critical stress, and (3) decomposition of the MgH2 particles after fracture.

  7. Growth kinetics and thermal stress in AlN bulk crystal growth

    NASA Astrophysics Data System (ADS)

    Wu, Bei; Ma, Ronghui; Zhang, Hui; Dudley, Michael; Schlesser, Raoul; Sitar, Zlatko

    2003-06-01

    Group III nitrides, such as GaN, AlN and InGaN, have attracted great attention due to their applications in blue-green and ultraviolet light emitting diodes and lasers. In this paper, an integrated model has been developed based on the conservation of momentum, mass, chemical species and energy together with boundary conditions that account for heterogeneous chemical reactions both at the source and seed surfaces. The predicted temperature profiles have been compared with measurements for different power levels and flow rates in a reactor for AlN crystal growth at the North Carolina State University. We have found that the heat power level affects the entire temperature distribution greatly while the flow rate has insignificant effect on the temperature distribution; the overall thermal stress level is higher than the critical resolved shear stress, indicating that thermal elastic stress can be a major source to induce high dislocation density in the as-grown crystal. The stress level is strongly dependent on the temperature gradient in the as-grown crystal. Results are correlated well with defects showing in an X-ray topograph for the AlN plate crystal.

  8. Stress evolution during and after sputter deposition of thin Cu Al alloy films

    NASA Astrophysics Data System (ADS)

    Pletea, M.; Wendrock, H.; Kaltofen, R.; Schmidt, O. G.; Koch, R.

    2008-06-01

    The stress evolution during and after sputter deposition of thin Cu-Al alloy films containing 1 and 2 at.% Al onto oxidized Si(100) substrates has been studied up to thicknesses of 300 nm by means of in situ substrate curvature measurements. In order to correlate stress and morphology, the microstructure was investigated by focused ion beam microscopy, scanning electron microscopy, and atomic force microscopy. The evolution of the stress and microstructure of the Cu-Al alloy films is similar to that for sputtered pure Cu films. Film growth proceeds in the Volmer-Weber mode, typical for high mobility metals. It is characterized by nucleation, island, percolation, and channel stages before the films become continuous, as well as lateral grain growth in the compact films. With increasing Al content the overall atom mobility and, thus, the average grain size of the alloy films are reduced. Increase of the sputter pressure from 0.5 to 2 Pa leads to films with larger grain size, rougher surface morphology and higher electrical resistivity.

  9. Joule-Heating-Induced Damage in Cu-Al Wedge Bonds Under Current Stressing

    NASA Astrophysics Data System (ADS)

    Yang, Tsung-Han; Lin, Yu-Min; Ouyang, Fan-Yi

    2014-01-01

    Copper wires are increasingly used to replace gold wires in wire-bonding technology owing to their better electrical properties and lower cost. However, not many studies have been conducted on electromigration-induced failure of Cu wedge bonds on Al metallization. In this study, we investigated the failure mechanism of Cu-Al wedge bonds under high current stressing from 4 104 A/cm2 to 1 105 A/cm2 at ambient temperature of 175C. The resistance evolution of samples during current stressing and the microstructure of the joint interface between the Cu wire and Al-Si bond pad were examined. The results showed that abnormal crack formation accompanying significant intermetallic compound growth was observed at the second joint of the samples, regardless of the direction of electric current for both current densities of 4 104 A/cm2 and 8 104 A/cm2. We propose that this abnormal crack formation at the second joint is mainly due to the higher temperature induced by the greater Joule heating at the second joint for the same current stressing, because of its smaller bonded area compared with the first joint. The corresponding fluxes induced by the electric current and chemical potential difference between Cu and Al were calculated and compared to explain the failure mechanism. For current density of 1 105 A/cm2, the Cu wire melted within 0.5 h owing to serious Joule heating.

  10. Ratcheting fatigue behaviour of Al-7075 T6 alloy: Influence of stress parameters

    NASA Astrophysics Data System (ADS)

    Amarnath, Lala; Bhattacharjee, Antara; Dutta, K.

    2016-02-01

    The use of aluminium and aluminium based alloys are increasing rapidly on account of its high formability, good thermal and electrical conductivity, high strength and lightness. Aluminium alloys are extensively used in aerospace, automobile, marine and space research industries and are also put into structural applications where chances of fatigue damage cannot be ruled out. In the current work, it is intended to study the ratcheting fatigue behavior of 7075-T6 aluminium alloy at room temperature. This Al alloy is potentially used in aviation, marine and automotive components as well as in bicycle parts, rock mounting equipment and parts of ammunition where there is every chance of failure of the parts due to deformation caused by ratcheting. Ratcheting is the process of accruement of plastic stain produced when a component is subjected to asymmetric cyclic loading under the influence of low cycle fatigue. To accomplish the requirements of the projected research, stress-controlled cyclic loading experiments were done using a ±250 kN servo-hydraulic universal testing machine (Instron: 8800R). The effect of stress parameters such as mean stress and stress amplitude were investigated on the ratcheting behavior of the selected aluminium alloy. It was observed that, ratcheting strain increased with increase in the value of stress amplitude at any constant mean stress while a saturation in strain accumulation attained in the investigated material after around 10-20 cycles, under all test conditions. The analyses of hysteresis loop generated during cyclic loading indicate that the material exhibits cyclic hardening in the initial fifty cycles which gets softened in further loading up to about 70-80 cycles and finally attains a steady state. The increase in the ratcheting strain value with stress parameters happens owing to increased deformation domain during cycling. The cyclic hardening accompanied by softening is correlated with characteristic precipitation features of the investigated Al 7075 alloy.

  11. High Density Sliding at Ta/Al and Al/Al Interfaces

    SciTech Connect

    Hammerberg, J. E.; Germann, T. C.; Ravelo, R.

    2006-07-28

    We present 3D-nonequilibrium molecular dynamics results for the velocity dependence of the frictional force at smooth sliding interfaces for Ta and Al single crystals. For Ta/Al we consider Al(100)/Ta(100) and Al(111)/Ta(110) interfaces sliding along [001] and [11(bar sign)0]fcc /[001]bcc respectively. These are compared with Al(111)/Al(100) interfaces at the same loads, corresponding to a pressure of 15 GPa. Both interfacial pairs show similar behavior in the velocity dependence of the frictional force: a low velocity regime with an increasing frictional force followed by a strain induced transformation regime at velocities above approximately 1/10 the transverse sound speed, followed by a fluidized interface at high velocities. For both interfacial pairs, the high velocity dependence of the frictional force exhibits power law behavior, Ft {proportional_to} v-{beta} with {beta}=3/4. We discuss the structural changes that influence dissipation in each of these regimes.

  12. Stress and texture evolution of Ni/Al multi-film by laser interference irradiation

    SciTech Connect

    Daniel, Claus; Lasagni, Andres Fabian; M�cklich, Frank

    2004-01-01

    Ni/Al multi-layered thin film systems are important to protect the mechanical and chemical impact on the bulk component. The mechanical properties of these compounds can be further improved by combining different stress and texture situations. Such optimized surface composites have been achieved by laser interference irradiation. In this study, the thin film system Ni/Al was produced by physical vapor deposition and irradiated by the interference pattern of two coherent laser beams. A thermal simulation of the irradiation with a focus on the temperature and phase transition evolution was investigated. The stress and texture distribution before and after interference irradiation were thoroughly investigated by high resolution X-ray diffraction.

  13. Photosynthesis: response to high temperature stress.

    PubMed

    Mathur, Sonal; Agrawal, Divya; Jajoo, Anjana

    2014-08-01

    Global warming has led to increased temperature of the earth which is a major abiotic stress posing a serious threat to the plants. Photosynthesis is amongst the plant cell functions that is highly sensitive to high temperature stress and is often inhibited before other cell functions are impaired. The primary sites of targets of high temperature stress are Photosystem II (PSII), ribulose-1,5-bisphosphate carboxylase/oxygenase (Rubisco) while Cytochrome b559 (Cytb559) and plastoquinone (PQ) are also affected. As compared to PSII, PSI is stable at higher temperatures. ROS production, generation of heat shock proteins, production of secondary metabolites are some of the consequences of high temperature stress. In this review we have summarized the physiological, biochemical and molecular aspects of high temperature stress on the process of photosynthesis, as well as the tolerance and adaptive mechanisms involved. PMID:24796250

  14. High temperature aqueous stress corrosion testing device

    DOEpatents

    Bornstein, A.N.; Indig, M.E.

    1975-12-01

    A description is given of a device for stressing tensile samples contained within a high temperature, high pressure aqueous environment, thereby permitting determination of stress corrosion susceptibility of materials in a simple way. The stressing device couples an external piston to an internal tensile sample via a pull rod, with stresses being applied to the sample by pressurizing the piston. The device contains a fitting/seal arrangement including Teflon and weld seals which allow sealing of the internal system pressure and the external piston pressure. The fitting/seal arrangement allows free movement of the pull rod and the piston.

  15. Stress-Induced Grain Growth in an Ultra-Fine Grained Al Alloy

    NASA Astrophysics Data System (ADS)

    Lin, Yaojun; Wen, Haiming; Li, Ying; Wen, Bin; Liu, Wei; Lavernia, Enrique J.

    2014-06-01

    This paper reports on a study of the stress-induced grain growth phenomenon in the presence of second-phase particles and solutes segregated at grain boundaries (GBs) during high-temperature deformation of an ultra-fine grained (UFG) Al alloy synthesized via the consolidation of mechanically milled powders. Our results show that grain growth was essentially inhibited during annealing at 673 K (400 C) in the absence of an externally applied stress, whereas in contrast, grain growth was enhanced by a factor of approximately 2.7 during extrusion at 673 K (400 C). These results suggest that significant grain growth during hot extrusion was attributable to the externally applied stresses stemming from the state of stress imposed during extrusion and that the externally applied stresses can overcome the resistance forces generated by second-phase particles and solutes segregated at GBs. The mechanisms underlying stress-induced grain growth were identified as GB migration and grain rotation, which were accompanied by dynamic recovery and possible geometric dynamic recrystallization, while discontinuous dynamic recrystallization did not appear to be operative.

  16. Erratum: Erratum to: Stress-Induced Grain Growth in an Ultra-Fine Grained Al Alloy

    NASA Astrophysics Data System (ADS)

    Lin, Yaojun; Wen, Haiming; Li, Ying; Wen, Bin; Liu, Wei; Lavernia, Enrique J.

    2014-10-01

    This paper reports on a study of the stress-induced grain growth phenomenon in the presence of second-phase particles and solutes segregated at grain boundaries (GBs) during high-temperature deformation of an ultra-fine grained (UFG) Al alloy synthesized via the consolidation of mechanically milled powders. Our results show that grain growth was essentially inhibited during annealing at 673 K (400 C) in the absence of an externally applied stress, whereas in contrast, grain growth was enhanced by a factor of approximately 2.7 during extrusion at 673 K (400 C). These results suggest that significant grain growth during hot extrusion was attributable to the externally applied stresses stemming from the state of stress imposed during extrusion and that the externally applied stresses can overcome the resistance forces generated by second-phase particles and solutes segregated at GBs. The mechanisms underlying stress-induced grain growth were identified as GB migration and grain rotation, which were accompanied by dynamic recovery and possible geometric dynamic recrystallization, while discontinuous dynamic recrystallization did not appear to be operative.

  17. Growth and Stress-induced Transformation of Zinc blende AlN Layers in Al-AlN-TiN Multilayers

    PubMed Central

    Li, Nan; Yadav, Satyesh K.; Wang, Jian; Liu, Xiang-Yang; Misra, Amit

    2015-01-01

    AlN nanolayers in sputter deposited {111}Al/AlN/TiN multilayers exhibit the metastable zinc-blende-structure (z-AlN). Based on density function theory calculations, the growth of the z-AlN is ascribed to the kinetically and energetically favored nitridation of the deposited aluminium layer. In situ nanoindentation of the as-deposited {111}Al/AlN/TiN multilayers in a high-resolution transmission electron microscope revealed the z-AlN to wurzite AlN phase transformation through collective glide of Shockley partial dislocations on every two {111} planes of the z-AlN. PMID:26681109

  18. Growth and Stress-induced Transformation of Zinc blende AlN Layers in Al-AlN-TiN Multilayers

    NASA Astrophysics Data System (ADS)

    Li, Nan; Yadav, Satyesh K.; Wang, Jian; Liu, Xiang-Yang; Misra, Amit

    2015-12-01

    AlN nanolayers in sputter deposited {111}Al/AlN/TiN multilayers exhibit the metastable zinc-blende-structure (z-AlN). Based on density function theory calculations, the growth of the z-AlN is ascribed to the kinetically and energetically favored nitridation of the deposited aluminium layer. In situ nanoindentation of the as-deposited {111}Al/AlN/TiN multilayers in a high-resolution transmission electron microscope revealed the z-AlN to wurzite AlN phase transformation through collective glide of Shockley partial dislocations on every two {111} planes of the z-AlN.

  19. Growth and Stress-induced Transformation of Zinc blende AlN Layers in Al-AlN-TiN Multilayers.

    PubMed

    Li, Nan; Yadav, Satyesh K; Wang, Jian; Liu, Xiang-Yang; Misra, Amit

    2015-01-01

    AlN nanolayers in sputter deposited {111}Al/AlN/TiN multilayers exhibit the metastable zinc-blende-structure (z-AlN). Based on density function theory calculations, the growth of the z-AlN is ascribed to the kinetically and energetically favored nitridation of the deposited aluminium layer. In situ nanoindentation of the as-deposited {111}Al/AlN/TiN multilayers in a high-resolution transmission electron microscope revealed the z-AlN to wurzite AlN phase transformation through collective glide of Shockley partial dislocations on every two {111} planes of the z-AlN. PMID:26681109

  20. Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer

    NASA Astrophysics Data System (ADS)

    Kida, Yoshihiro; Shibata, Tomohiko; Miyake, Hideto; Hiramatsu, Kazumasa

    2003-06-01

    The crystalline quality of AlGaN with high AlN molar fraction grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) was improved by using high-quality epitaxial AlN film on sapphire (0001). Atomically flat AlxGa1-xN (0.2AlN film. Lattice constants of the Al0.48Ga0.52N and the AlN at growth temperature were estimated from high-temperature X-ray diffraction measurement. The results showed that the in-plane lattice constant of the Al0.48Ga0.52N was stress-free or slightly compressed even at the growth temperature. The smaller in-plane lattice constant of AlN than that of AlGaN is considered to play a great important role in restraining generation of cracks.

  1. STRESS ANNEALING INDUCED DIFFUSE SCATTERING FROM Ni3(Al,Si) PRECIPITATES

    SciTech Connect

    Barabash, Rozaliya; Ice, Gene E; Karapetrova, Evgenia; Zschack, P.

    2012-01-01

    Diffuse scattering caused by L12 type Ni3 (Al,Si) precipitates after stress annealing of Ni-Al-Si alloys is studied. Experimental reciprocal space maps are compared to the theoretical ones. Oscillations of diffuse scattering due to Ni3 (Al,Sc) precipitates are observed. Peculiarities of diffuse scattering in asymptotic region as compared to Huang scattering region are discussed. Coupling between the stress annealing direction and the precipitate shape is demonstrated.

  2. Stress corrosion cracking of Ti-8Al-1 Mo-1V in molten salts

    NASA Technical Reports Server (NTRS)

    Smyrl, W. H.; Blackburn, M. J.

    1975-01-01

    The stress corrosion cracking (SCC) behavior of Ti-8Al-1 Mo-1V has been studied in several molten salt environments. Extensive data are reported for the alloy in highly pure LiCl-KCl. The influence of the metallurgical heat treatment and texture, and the mechanical microstructure show similarities with aqueous solutions at lower temperature. The fracture path and cracking modes are also similar to that found in other environments. The influence of H2O and H(-) in molten LiCl-KCl lead to the conclusion that hydrogen does not play a major role in crack extension in this environment.

  3. Dysregulated miRNA biogenesis downstream of cellular stress and ALS-causing mutations: a new mechanism for ALS.

    PubMed

    Emde, Anna; Eitan, Chen; Liou, Lee-Loung; Libby, Ryan T; Rivkin, Natali; Magen, Iddo; Reichenstein, Irit; Oppenheim, Hagar; Eilam, Raya; Silvestroni, Aurelio; Alajajian, Betty; Ben-Dov, Iddo Z; Aebischer, Julianne; Savidor, Alon; Levin, Yishai; Sons, Robert; Hammond, Scott M; Ravits, John M; Möller, Thomas; Hornstein, Eran

    2015-11-01

    Interest in RNA dysfunction in amyotrophic lateral sclerosis (ALS) recently aroused upon discovering causative mutations in RNA-binding protein genes. Here, we show that extensive down-regulation of miRNA levels is a common molecular denominator for multiple forms of human ALS. We further demonstrate that pathogenic ALS-causing mutations are sufficient to inhibit miRNA biogenesis at the Dicing step. Abnormalities of the stress response are involved in the pathogenesis of neurodegeneration, including ALS. Accordingly, we describe a novel mechanism for modulating microRNA biogenesis under stress, involving stress granule formation and re-organization of DICER and AGO2 protein interactions with their partners. In line with this observation, enhancing DICER activity by a small molecule, enoxacin, is beneficial for neuromuscular function in two independent ALS mouse models. Characterizing miRNA biogenesis downstream of the stress response ties seemingly disparate pathways in neurodegeneration and further suggests that DICER and miRNAs affect neuronal integrity and are possible therapeutic targets. PMID:26330466

  4. Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

    PubMed Central

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Zhang, Jie; Wang, Jiaming; He, Chenguang; Zhang, Lisheng; Wang, Maojun; Xu, Fujun; Tang, Ning; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

    2016-01-01

    By employing a single AlGaN layer with low Al composition, high quality and uniformity AlGaN/GaN heterostructures have been successfully grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). The heterostructures exhibit a high electron mobility of 2150 cm2/Vs with an electron density of 9.3 × 1012 cm−2. The sheet resistance is 313 ± 4 Ω/◻ with ±1.3% variation. The high uniformity is attributed to the reduced wafer bow resulting from the balance of the compressive stress induced and consumed during the growth, and the thermal tensile stress induced during the cooling down process. By a combination of theoretical calculations and in situ wafer curvature measurements, we find that the compressive stress consumed by the dislocation relaxation (~1.2 GPa) is comparable to the value of the thermal tensile stress (~1.4 GPa) and we should pay more attention to it during growth of GaN on Si substrates. Our results demonstrate a promising approach to simplifying the growth processes of GaN-on-Si to reduce the wafer bow and lower the cost while maintaining high material quality. PMID:26960730

  5. Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition.

    PubMed

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Zhang, Jie; Wang, Jiaming; He, Chenguang; Zhang, Lisheng; Wang, Maojun; Xu, Fujun; Tang, Ning; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

    2016-01-01

    By employing a single AlGaN layer with low Al composition, high quality and uniformity AlGaN/GaN heterostructures have been successfully grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). The heterostructures exhibit a high electron mobility of 2150 cm(2)/Vs with an electron density of 9.3 × 10(12) cm(-2). The sheet resistance is 313 ± 4 Ω/◻ with ±1.3% variation. The high uniformity is attributed to the reduced wafer bow resulting from the balance of the compressive stress induced and consumed during the growth, and the thermal tensile stress induced during the cooling down process. By a combination of theoretical calculations and in situ wafer curvature measurements, we find that the compressive stress consumed by the dislocation relaxation (~1.2 GPa) is comparable to the value of the thermal tensile stress (~1.4 GPa) and we should pay more attention to it during growth of GaN on Si substrates. Our results demonstrate a promising approach to simplifying the growth processes of GaN-on-Si to reduce the wafer bow and lower the cost while maintaining high material quality. PMID:26960730

  6. Characterization of Quench-Extracted High Pressure Stressed Microorganisms

    NASA Astrophysics Data System (ADS)

    Sharma, P.; Sharma, A.

    2011-12-01

    In-situ high pressure microbiology work by Sharma et al (2002) presented a unique approach with diamond anvil cells to the study of microbes under environmental stress. This study focused on high pressure exposure as the stress component and provided a technique to directly monitor microbial activity. However, it lacked the much desired biochemical and biophysical information that could reflect the state of surviving microorganisms with insights into the process of adaptation at extreme. More recent work (Sharma et al 2011) expands on the previous study by including synergistic effect of high temperature with increased pressures along variable time scale. With the cell extraction and subsequent cell growth demonstrated, Sharma et al. (2011) show that more than pressure, temperature remains the environmental variable that defines the limits of life's survival. In this study we have refined the extraction process from the diamond anvil cell such that the stressed microorganisms can be routinely available for in-depth physiological study using conventional and state-of-the-art high resolution imaging tools. Here we present some recent in-depth FESEM, AFM and optical spectroscopy data to study the effect of stress on Escherichia coli. Contrary to earlier studies where various cell membrane ruptures were reported after moderate pressure exposure, we find that most cells remain viable and except for some occasional anomalous morphology, the surviving cells were similar to the unstressed state. Preliminary results suggest that the stress response in Escherichia coli exposed to short term extreme pressures (ranging from 1 -24 hrs) seems rapidly reversible. Biophysical entities such as the cell membrane, therefore, remain intact in the whole organism (and colony of microorganisms) at significantly higher pressure conditions than 300 MPa as reported in previous biophysics literature.

  7. A stress and arousal mood scale for low vocabulary subjects: a reworking of Mackay et al. (1978).

    PubMed

    Cruickshank, P J

    1984-02-01

    In an experiment investigating patient mood in an out-patient setting, a Mood Adjective Checklist (Mackay et al., 1978) was administered to 189 patients before and after their consultations, obtaining 366 completed questionnaires. Both the stress and arousal scales in the Mackay et al. checklist contain unequal numbers of positive and negative items, and are thus subject to response bias. When the results were analysed, it was noted that some items in the checklist led to large numbers of question mark responses, and it was discovered that word frequency, used as an estimate of word unfamiliarity, was correlated with the use of the question mark. Furthermore, when question mark responses were treated as missing data, as recommended by Meddis (1972), the factor analytic distinction between stress and arousal disappeared. Next, items giving rise to 15 per cent or more question mark responses were omitted from analysis, and the remaining items factor analysed. The resulting checklist comprised nine high stress items, nine low stress items, four high arousal items and four low arousal items. Mackay et al.'s stress and arousal scales were reconstructed using these items; they were no longer subject to response bias, and were more accessible to low vocabulary subjects. PMID:6704636

  8. Oxidative stress and mitochondrial damage: importance in non-SOD1 ALS

    PubMed Central

    Carr, Maria Teresa; Valle, Cristiana; Bozzo, Francesca; Cozzolino, Mauro

    2015-01-01

    It is well known that mitochondrial damage (MD) is both the major contributor to oxidative stress (OS) (the condition arising from unbalance between production and removal of reactive oxygen species) and one of the major consequences of OS, because of the high dependance of mitochondrial function on redox-sensitive targets such as intact membranes. Conditions in which neuronal cells are not able to cope with MD and OS seem to lead or contribute to several neurodegenerative diseases including Amyotrophic Lateral Sclerosis (ALS), at least in the most studied superoxide dismutase 1 (SOD1)-linked genetic variant. As summarized in this review, new evidence indicates that MD and OS play a role also in non-SOD1 ALS and thus they may represent a target for therapy despite previous failures in clinical trials. PMID:25741238

  9. Softening Kinetics in High Al and High Al-Nb-Microalloyed Steels

    NASA Astrophysics Data System (ADS)

    Pereda, B.; Aretxabaleta, Z.; Lpez, B.

    2015-03-01

    Double-hit torsion tests were performed in order to study the effect of high Al levels (up to 2 wt.%) and Nb microalloying (up to 0.07 wt.%) on the static softening kinetics of 0.2%C-2%Mn steels. The addition of 1%Al leads to a delay in the softening kinetics due to solute-drag effect, equivalent to that exerted by 0.027%Nb. For the 2%Al steels, at temperatures below 1000 C, ? ? ? phase transformation occurs after deformation, resulting in a larger retardation of the softening kinetics. At temperatures higher than 1000 C, Nb in solid solution also contributes to the retardation of the static softening kinetics, and at lower temperatures NbC strain-induced precipitation leads to incomplete softening for the 1%Al steel, and to a complex interaction between softening, phase transformation, and NbC strain-induced precipitation for the 2%Al-Nb steels. The effect of Al on the static softening kinetics was quantified and introduced in a model developed in previous works for the prediction of the austenite microstructural evolution. In order to validate the results of the model, multipass torsion tests were carried out at conditions representative of hot strip and plate rolling mills. Model predictions show reasonable agreement with the results obtained at different deformation conditions.

  10. Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

    SciTech Connect

    Fltotto, D. Wang, Z. M.; Jeurgens, L. P. H.; Mittemeijer, E. J.

    2014-03-03

    The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al{sub 2}O{sub 3} films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively.

  11. Low-energy deposition of high-strength Al(0) alloys from an ECR plasma

    SciTech Connect

    Barbour, J.C.; Follstaedt, D.M.; Knapp, J.A.; Myers, S.M.; Marshall, D.A.; Lad, R.J.

    1995-12-31

    Low-energy deposition of Al(O) alloys from an electron cyclotron resonance (ECR) plasma offers a scaleable method for the synthesis of thick, high-strength Al layers. This work compares alloy layers formed by an ECR-0{sub 2} plasma in conjunction with Al evaporation to 0-implanted Al (ion energies 25-200 keV); and it examines the effects of volume fraction of A1{sub 2}0{sub 3} phase and deposition temperature on the yield stress of the material. TEM showed the Al(O) alloys contain a dense dispersion of small {gamma}-Al{sub 2}0{sub 3} precipitates ({approximately}l nm) in a fine-grain (10-100 nm) fcc Al matrix when deposited at a temperature of {approximately}100C, similar to the microstructure for gigapascal-strength 0-implanted Al. Nanoindentation gave hardnesses for ECR films from 1.1 to 3.2 GPa, and finite-element modeling gave yield stresses up to 1.3 {plus_minus} 0.2 GPa with an elastic modulus of 66 GPa {plus_minus} 6 GPa (similar to pure bulk Al). The yield stress of a polycrystalline pure Al layer was only 0.19 {plus_minus} 0.02 GPa, which was increased to 0.87 {plus_minus} 0.15 GPa by implantation with 5 at. % 0.

  12. Utilizing various test methods to study the stress corrosion behavior of Al-Li-Cu alloys

    NASA Technical Reports Server (NTRS)

    Pizzo, P. P.; Galvin, R. P.; Nelson, H. G.

    1984-01-01

    Recently, much attention has been given to aluminum-lithium alloys because of rather substantial specific-strength and specific-stiffness advantages offered over commercial 2000and 7000-series aluminum alloys. An obstacle to Al-Li alloy development has been inherent limited ductility. In order to obtain a more refined microstructure, powder metallurgy (P/M) has been employed in alloy development programs. As stress corrosion (SC) of high-strength aluminum alloys has been a major problem in the aircraft industry, the possibility of an employment of Al-Li alloys has been considered, taking into account a use of Al-Li-Cu alloys. Attention is given to a research program concerned with the evaluation of the relative SC resistance of two P/M processed Al-Li-Cu alloys. The behavior of the alloys, with and without an addition of magnesium, was studied with the aid of three test methods. The susceptibility to SC was found to depend on the microstructure of the alloys.

  13. Modelling Of Residual Stresses Induced By High Speed Milling Process

    SciTech Connect

    Desmaison, Olivier; Mocellin, Katia; Jardin, Nicolas

    2011-05-04

    Maintenance processes used in heavy industries often include high speed milling operations. The reliability of the post-process material state has to be studied. Numerical simulation appears to be a very interesting way to supply an efficient residual stresses (RS) distribution prediction.Because the adiabatic shear band and the serrated chip shaping are features of the austenitic stainless steel high speed machining, a 2D high speed orthogonal cutting model is briefly presented. This finite element model, developed on Forge registered software, is based on data taken from Outeiro and al.'s paper [1]. A new behaviour law fully coupling Johnson-Cook's constitutive law and Latham and Cockcroft's damage model is detailed in this paper. It ensures results that fit those found in literature.Then, the numerical tools used on the 2D model are integrated to a 3D high speed milling model. Residual stresses distribution is analysed, on the surface and into the depth of the material. Various revolutions and passes of the two teeth hemispheric mill on the workpiece are simulated. Thus the sensitivity of the residual stresses generation to the cutting conditions can be discussed. In order to validate the 3D model, a comparison of the cutting forces measured by EDF R and D to those given by numerical simulations is achieved.

  14. Modelling Of Residual Stresses Induced By High Speed Milling Process

    NASA Astrophysics Data System (ADS)

    Desmaison, Olivier; Mocellin, Katia; Jardin, Nicolas

    2011-05-01

    Maintenance processes used in heavy industries often include high speed milling operations. The reliability of the post-process material state has to be studied. Numerical simulation appears to be a very interesting way to supply an efficient residual stresses (RS) distribution prediction. Because the adiabatic shear band and the serrated chip shaping are features of the austenitic stainless steel high speed machining, a 2D high speed orthogonal cutting model is briefly presented. This finite element model, developed on Forge software, is based on data taken from Outeiro & al.'s paper [1]. A new behaviour law fully coupling Johnson-Cook's constitutive law and Latham and Cockcroft's damage model is detailed in this paper. It ensures results that fit those found in literature. Then, the numerical tools used on the 2D model are integrated to a 3D high speed milling model. Residual stresses distribution is analysed, on the surface and into the depth of the material. Various revolutions and passes of the two teeth hemispheric mill on the workpiece are simulated. Thus the sensitivity of the residual stresses generation to the cutting conditions can be discussed. In order to validate the 3D model, a comparison of the cutting forces measured by EDF R&D to those given by numerical simulations is achieved.

  15. Stress Corrosion Cracking in Al-Zn-Mg-Cu Aluminum Alloys in Saline Environments

    NASA Astrophysics Data System (ADS)

    Holroyd, N. J. Henry; Scamans, G. M.

    2013-03-01

    Stress corrosion cracking of Al-Zn-Mg-Cu (AA7xxx) aluminum alloys exposed to saline environments at temperatures ranging from 293 K to 353 K (20 C to 80 C) has been reviewed with particular attention to the influences of alloy composition and temper, and bulk and local environmental conditions. Stress corrosion crack (SCC) growth rates at room temperature for peak- and over-aged tempers in saline environments are minimized for Al-Zn-Mg-Cu alloys containing less than ~8 wt pct Zn when Zn/Mg ratios are ranging from 2 to 3, excess magnesium levels are less than 1 wt pct, and copper content is either less than ~0.2 wt pct or ranging from 1.3 to 2 wt pct. A minimum chloride ion concentration of ~0.01 M is required for crack growth rates to exceed those in distilled water, which insures that the local solution pH in crack-tip regions can be maintained at less than 4. Crack growth rates in saline solution without other additions gradually increase with bulk chloride ion concentrations up to around 0.6 M NaCl, whereas in solutions with sufficiently low dichromate (or chromate), inhibitor additions are insensitive to the bulk chloride concentration and are typically at least double those observed without the additions. DCB specimens, fatigue pre-cracked in air before immersion in a saline environment, show an initial period with no detectible crack growth, followed by crack growth at the distilled water rate, and then transition to a higher crack growth rate typical of region 2 crack growth in the saline environment. Time spent in each stage depends on the type of pre-crack ("pop-in" vs fatigue), applied stress intensity factor, alloy chemistry, bulk environment, and, if applied, the external polarization. Apparent activation energies ( E a) for SCC growth in Al-Zn-Mg-Cu alloys exposed to 0.6 M NaCl over the temperatures ranging from 293 K to 353 K (20 C to 80 C) for under-, peak-, and over-aged low-copper-containing alloys (<0.2 wt pct) are typically ranging from 80 to 85 kJ/mol, whereas for high-copper-containing alloys (>~0.8 wt pct), they are typically ranging from 20 to 40 kJ/mol for under- and peak-aged alloys, and based on limited data, around 85 kJ/mol for over-aged tempers. This means that crack propagation in saline environments is most likely to occur by a hydrogen-related process for low-copper-containing Al-Zn-Mg-Cu alloys in under-, peak- and over-aged tempers, and for high-copper alloys in under- and peak-aged tempers. For over-aged high-copper-containing alloys, cracking is most probably under anodic dissolution control. Future stress corrosion studies should focus on understanding the factors that control crack initiation, and insuring that the next generation of higher performance Al-Zn-Mg-Cu alloys has similar longer crack initiation times and crack propagation rates to those of the incumbent alloys in an over-aged condition where crack rates are less than 1 mm/month at a high stress intensity factor.

  16. High-cycle fatigue characterization of titanium 5Al-2.5Sn alloy

    NASA Technical Reports Server (NTRS)

    Mahfuz, H.; Xin, Yu T.; Jeelani, S.

    1993-01-01

    High-cycle fatigue behavior of titanium 5Al 2.5Sn alloy at room temperature has been studied. S-N curve characterization is performed at different stress ratios ranging from 0 to 0.9 on a subsized fatigue specimen. Both two-stress and three-stress level tests are conducted at different stress ratios to study the cumulative fatigue damage. Life prediction techniques of linear damage rule, double linear damage rule and damage curve approaches are applied, and results are compared with the experimental data. The agreement between prediction and experiment is found to be excellent.

  17. Bending fatigue tests on SiC-Al tapes under alternating stress at room temperature

    NASA Technical Reports Server (NTRS)

    Herzog, J. A.

    1981-01-01

    The development of a testing method for fatigue tests on SiC-Al tapes containing a small amount of SiC filaments under alternating stress is reported. The fatigue strength curves resulting for this composite are discussed. They permit an estimate of its behavior under continuous stress and in combination with various other matrices, especially metal matrices.

  18. Al/C60 Nanocomposites Fabricated by High-Pressure Torsion

    NASA Astrophysics Data System (ADS)

    Asgharzadeh, Hamed; Joo, Soo-Hyun; Kim, Hyoung Seop

    2015-05-01

    Al-2 vol pct fullerene (C60) composites with relative densities of >0.98 are manufactured by high-pressure torsion of ball-milled powders under an applied pressure of 6 GPa. A considerable Al grain refinement to ~53 nm and a homogeneous distribution of fullerenes give rise to a very high hardness of 152 Hv and yield stress of 405 MPa. Nevertheless, the poor tensile ductility due to the low work-hardening rate is achieved.

  19. Stress corrosion cracking and hydrogen embrittlement of an Al-Zn-Mg-Cu alloy

    SciTech Connect

    Song, R.G.; Dietzel, W.; Zhang, B.J.; Liu, W.J.; Tseng, M.K.; Atrens, A

    2004-09-20

    The age hardening, stress corrosion cracking (SCC) and hydrogen embrittlement (HE) of an Al-Zn-Mg-Cu 7175 alloy were investigated experimentally. There were two peak-aged states during ageing. For ageing at 413 K, the strength of the second peak-aged state was slightly higher than that of the first one, whereas the SCC susceptibility was lower, indicating that it is possible to heat treat 7175 to high strength and simultaneously to have high SCC resistance. The SCC susceptibility increased with increasing Mg segregation at the grain boundaries. Hydrogen embrittlement (HE) increased with increased hydrogen charging and decreased with increasing ageing time for the same hydrogen charging conditions. Computer simulations were carried out of (a) the Mg grain boundary segregation using the embedded atom method and (b) the effect of Mg and H segregation on the grain boundary strength using a quasi-chemical approach. The simulations showed that (a) Mg grain boundary segregation in Al-Zn-Mg-Cu alloys is spontaneous, (b) Mg segregation decreases the grain boundary strength, and (c) H embrittles the grain boundary more seriously than does Mg. Therefore, the SCC mechanism of Al-Zn-Mg-Cu alloys is attributed to the combination of HE and Mg segregation induced grain boundary embrittlement.

  20. The Influence of Al-Anon on Stress of Wives of Alcoholics.

    ERIC Educational Resources Information Center

    McGregor, Phyllis W.

    This study assessed Alcoholics Anonymous (Al-Anon) participation as a factor in stress of wives of alcoholics. Additional data focused on attitude and behavior variables. Two groups of 20 subjects each were enlisted from Al-Anon, personal contacts, treatment centers, and referrals in three urban areas in the southeastern United States. Group A

  1. Insights into the proteomic response of soybean towards Al2O3, ZnO, and Ag nanoparticles stress.

    PubMed

    Hossain, Zahed; Mustafa, Ghazala; Sakata, Katsumi; Komatsu, Setsuko

    2016-03-01

    Understanding the complex mechanisms involved in plant response to nanoparticles is indispensable in assessing the impact of nano-pollutants on environment. The present study compares the phytotoxicity of three different metal-based nanoparticles (Al2O3, ZnO, and Ag) in soybean seedling at proteome level. Plant growth, rigidity of roots, and root cell viability were markedly affected by ZnO- and Ag-NPs stress; while, Al2O3-NPs challenged soybean maintained normal seedling growth like control. Moreover, severe oxidative burst was evident in ZnO-NPs and Ag-NPs treatments. Gel-free proteomic analysis of NPs stressed soybean roots revealed 104 commonly changed proteins primarily associated with secondary metabolism, cell organization, and hormone metabolism. Oxidation-reduction cascade related genes, such as GDSL motif lipase 5, SKU5 similar 4, galactose oxidase, and quinone reductase were up-regulated in Al2O3-NPs challenged roots and down-regulated in ZnO- and Ag-NPs treatments. In comparison to root, 16 common proteins were found to be significantly changed in leaves of NPs exposed soybean that were predominantly associated to photosystem and protein degradation. The proteomic findings suggest that high abundance of proteins involved in oxidation-reduction, stress signaling, hormonal pathways related to growth and development might be the principal key for optimum growth of soybean under Al2O3-NPs stress. PMID:26561753

  2. Effect of thermal residual stress on the mechanical properties of NiAl-based composites

    SciTech Connect

    Choo, H.; Bourke, M.; Nash, P.

    1999-07-01

    NiAl-based hybrid composites containing 5, 15 and 30 volume percent of Al{sub 2}O{sub 3} fibers in addition to AlN dispersion particles were fabricated via a powder metallurgy route. The strengthening mechanisms associated with the short Al{sub 2}O{sub 3} fiber in NiAl-(AlN){sub dispersion}-(Al{sub 2}O{sub 3}){sub fiber} composite were studied with an emphasis on the effect of thermal residual stress on the compressive strength at room temperature and 1,300K. At 300K, the yield strength of the composites was predicted using a linear superposition of the monolithic yield strength, direct fiber strengthening and tensile matrix residual stresses. The prediction shows good agreement with the measured data. The majority of the room temperature strengthening is attributable to the residual stress. At 1,300K, the strengthening was achieved only by the load sharing of the fibers and there is no direct influence from the process-induced thermal residual stresses since they were completely relaxed at this temperature.

  3. Optimization on hardness and internal stress of micro-electroformed NiCo/nano-Al2O3 composites with the constraint of low surface roughness

    NASA Astrophysics Data System (ADS)

    Hung, Shih-Yu

    2009-01-01

    In this paper, Ni-Co/nano-Al2O3 composite electroforming was used to make the metallic micro-mold for a microlens array. The microstructures require higher hardness to improve the wear resistance and lifetime. Nano-Al2O3 was applied to strengthen the Ni-Co matrix by a new micro-electroforming technique. The hardness and internal stress of Ni-Co/nano-Al2O3 composite deposit were investigated. The results showed that the hardness increased with the increasing Al2O3 content, but at the cost of deformation. Increasing the Al2O3 content in the composite was not always beneficial to the electroformed mold for microlens array fabrication. This work will concentrate on the relationship between important mechanical properties and electrolyte parameters of Ni-Co/nano-Al2O3 composite electroforming. Electrolyte parameters such as Al2O3 content, Al2O3 particle diameter, Co content, stress reducer and current density will be examined with respect to internal stress and hardness. In the present study, low stress and high hardness electroforming with the constraint of low surface roughness is carried out using SNAOA algorithm to reduce internal stress and increase service life of micro-mold during the forming process. The results show that the internal stress and the RMS roughness are only 0.54 MPa and 4.8 nm, respectively, for the optimal electrolyte parameters combination of SNAOA design.

  4. High temperature deformation of NiAl and CoAl

    NASA Technical Reports Server (NTRS)

    Nix, W. D.

    1982-01-01

    The high temperature mechanical properties of the aluminides are reviewed with respect to their potential as high temperature structural materials. It is shown that NiAl and CoAl are substantially stronger than the pure metals Ni and Co at high temperatures and approach the strength of some superalloys, particularly when those superalloys are tested in "weak" directions. The factors that limit and control the high temperature strengths of NiAl and CoAl are examined to provide a basis for the development of intermetallic alloys of this type.

  5. Stress effects in twisted highly birefringent fibers

    NASA Astrophysics Data System (ADS)

    Wolinski, Tomasz R.

    1994-03-01

    Hydrostatic pressure and uniaxial longitudinal strain effects in twisted highly birefringent optical fibers have been investigated from the point of the Marcuse mode-coupling theory. The problem is analyzed in terms of local normal modes of the ideal fiber and in the limit of weak twist, where large linear birefringence dominates over twist effect, and therefore twist coupling between local modes is not effective. The authors present the results of birefringence measurements in highly birefringent bow-tie fibers influenced simultaneously by hydrostatic pressure up to 100 MPa and twisting the result for highly birefringent elliptical-core fibers influenced by uniaxial longitudinal strain up to 4000 (mu) (epsilon) and twisting effect. The birefringence measurement method is based on twist-induced effects and has been successfully applied in a stress environment. The experiment was conducted with a specially designed stress generating device that makes it possible to simultaneously generate various mechanical perturbations such as hydrostatic and radial pressure, axial strain and twist, allowing study of their influence on mode propagation in optical fibers. A comparison with theoretical results as well as with pervious experimental data on stress influence on the beat length parameter in highly birefringent fibers is also provided.

  6. Numerical Simulation of Residual Stress in an Al-Cu Alloy Block During Quenching and Aging

    NASA Astrophysics Data System (ADS)

    Dong, Ya-Bo; Shao, Wen-Zhu; Lu, Liang-Xing; Jiang, Jian-Tang; Zhen, Liang

    2015-12-01

    In this study, residual stresses after different quenching and aging processes of Al-Cu forged blocks were investigated by numerical simulation method and experimental measurements. An iterative zone-based heat transfer calculation was coupled with the hyperbolic sine-type constitutive model to simulate the residual stress during quenching process. The simulation results were compared with experiment data using both x-ray diffraction and crack compliance methods. The simulation results were in good agreement with the experimental measurements with around 9-13% deviation at the largest. Residual stress reduction can be achieved by decreasing the cooling rate during quenching. Quenching in water with different temperatures of 60, 80, and 100 C resulted in the maximum compressive residual stress reduction of approximately 28.2, 75.7, and 88.9%, respectively, in Al-Cu alloy samples. When quenched in 10, 20, and 30% PAG solution, the reduction of maximum compressive residual stress in Al-Cu alloy samples was approximately 35.1, 47.8, and 53.2%, respectively. In addition, in order to study the amount of residual stress relief after aging treatments, aging treatments at 140 and 170 C for different times were also studied. Aging treatment used to obtain the peak-aged (T6) and overaged (T7) condition produces only about 22.5 to 34.7% reduction in residual stresses.

  7. Numerical Simulation of Residual Stress in an Al-Cu Alloy Block During Quenching and Aging

    NASA Astrophysics Data System (ADS)

    Dong, Ya-Bo; Shao, Wen-Zhu; Lu, Liang-Xing; Jiang, Jian-Tang; Zhen, Liang

    2015-11-01

    In this study, residual stresses after different quenching and aging processes of Al-Cu forged blocks were investigated by numerical simulation method and experimental measurements. An iterative zone-based heat transfer calculation was coupled with the hyperbolic sine-type constitutive model to simulate the residual stress during quenching process. The simulation results were compared with experiment data using both x-ray diffraction and crack compliance methods. The simulation results were in good agreement with the experimental measurements with around 9-13% deviation at the largest. Residual stress reduction can be achieved by decreasing the cooling rate during quenching. Quenching in water with different temperatures of 60, 80, and 100 C resulted in the maximum compressive residual stress reduction of approximately 28.2, 75.7, and 88.9%, respectively, in Al-Cu alloy samples. When quenched in 10, 20, and 30% PAG solution, the reduction of maximum compressive residual stress in Al-Cu alloy samples was approximately 35.1, 47.8, and 53.2%, respectively. In addition, in order to study the amount of residual stress relief after aging treatments, aging treatments at 140 and 170 C for different times were also studied. Aging treatment used to obtain the peak-aged (T6) and overaged (T7) condition produces only about 22.5 to 34.7% reduction in residual stresses.

  8. High-performance nonvolatile Al/AlOx/CdTe:Sb nanowire memory device

    NASA Astrophysics Data System (ADS)

    Xie, Chao; Nie, Biao; Zhu, Long; Zeng, Long-Hui; Yu, Yong-Qiang; Wang, Xian-He; Fang, Qun-Ling; Luo, Lin-Bao; Wu, Yu-Cheng

    2013-09-01

    Here we demonstrate a room temperature processed nonvolatile memory device based on an Al/AlOx/CdTe:Sb nanowire (NW) heterojunction. Electrical analysis shows an echelon hysteresis composed of a high-resistance state (HRS) and a low-resistance state (LRS), which can allow it to write and erase data from the device. The conductance ratio is as high as 106, with a retention time of 3 104 s. Moreover, the SET voltages ranged from +6 to +8 V, whilst the RESET voltage ?0 V. In addition, flexible memory nano-devices on PET substrate with comparable switching performance at bending condition were fabricated. XPS analysis of the Al/AlOx/CdTe:Sb NW heterojunction after controlled Ar+ bombardment reveals that this memory behavior is associated with the presence of ultra-thin AlOx film. This Al/AlOx/CdTe:Sb NW heterojunction will open up opportunities for new memory devices with different configurations.

  9. Analysis of residual stresses in Al-Li repair welds and mitigation techniques

    SciTech Connect

    Dong, P.; Hong, J.K.; Rogers, P.

    1998-11-01

    In this paper, the recent results based on a comprehensive study on repair weld residual stresses are presented. Advanced finite element techniques were used to characterize the residual stress evolution in Al-Li alloy weldments, particularly under repair welding conditions. The present analysis procedures considered three-dimensional residual stress characteristics in the repair welds using a shell element model. Local residual stress details were analyzed by a generalized plane-strain model with prescribed translation and rotation conditions established from the global shell element model. Experimental residual stress measurements were conducted using X-ray diffraction methods. A good agreement between the finite element results and experimental measurements was obtained. Finally, a novel welding repair procedure (termed as a thermal stretching technique) was proposed to mitigate the weld residual stresses in repair.

  10. Sintering Stress and Viscosity of Ni/Al2O3 Powder Mixtures

    NASA Astrophysics Data System (ADS)

    Shinagawa, Kazunari

    2008-02-01

    Sinter-forging tests of Ni/Al2O3 powder compacts with mixing ratios ranging from 0/100 to 100/0 are performed to reveal the influence of mixing different types of powder on the sintering properties. The sintering stress and the viscosity are evaluated from the data of strain-time curves with different loads at an elevated temperature. The sintering stress as well as the viscosity of pure Ni powder compact is lower than that of pure Al2O3. The increase in viscosity of the powder mixtures by adding Al2O3 into Ni is large compared with that in sintering stress within small amounts of addition, which corresponds to the retard of the sintering rate.

  11. The Influence of Hydrogen on the Stress Corrosion Cracking of Low-Strength AL-MG Alloys

    SciTech Connect

    Jones, Russell H.

    2003-02-01

    There is growing evidence for hydrogen uptake in aluminum alloys and its contribution to the crack growth of high-strength aluminum alloys but less evidence for low-strength alloys. This paper summarizes the evidence for hydrogen uptake in a low-strength alloy AA5083 and its contribution to the stress corrosion cracking of this alloy. A key factor is the anodic dissolution of grain boundary b phase (Al3Mg2) and the associated hydrogen reduction that accompanies this dissolution.

  12. Minimization of Residual Stress in an Al-Cu Alloy Forged Plate by Different Heat Treatments

    NASA Astrophysics Data System (ADS)

    Dong, Ya-Bo; Shao, Wen-Zhu; Jiang, Jian-Tang; Zhang, Bao-You; Zhen, Liang

    2015-06-01

    In order to improve the balance of mechanical properties and residual stress, various quenching and aging treatments were applied to Al-Cu alloy forged plate. Residual stresses determined by the x-ray diffraction method and slitting method were compared. The surface residual stress measured by x-ray diffraction method was consistent with that measured by slitting method. The residual stress distribution of samples quenched in water with different temperatures (20, 60, 80, and 100 °C) was measured, and the results showed that the boiling water quenching results in a 91.4% reduction in residual stress magnitudes compared with cold water quenching (20 °C), but the tensile properties of samples quenched in boiling water were unacceptably low. Quenching in 80 °C water results in 75% reduction of residual stress, and the reduction of yield strength is 12.7%. The residual stress and yield strength level are considerable for the dimensional stability of aluminum alloy. Quenching samples into 30% polyalkylene glycol quenchants produced 52.2% reduction in the maximum compressive residual stress, and the reduction in yield strength is 19.7%. Moreover, the effects of uphill quenching and thermal-cold cycling on the residual stress were also investigated. Uphill quenching and thermal-cold cycling produced approximately 25-40% reduction in residual stress, while the effect on tensile properties is quite slight.

  13. Luminescence sensing of stress in Ti/Al{sub 2}O{sub 3} fiber reinforced composites

    SciTech Connect

    Hough, H.; Demas, J.; Williams, T.O.; Wadley, H.N.G.

    1995-02-01

    The high temperature processing of fibrous metal matrix composites has been predicted to result in the development of large residual stresses because of a difference between the coefficients of thermal expansion (CTE) of the fibers and matrix. The R1 and R2 optical luminescence line shifts of single crystal {alpha}-Al{sub 2}O{sub 3} fibers embedded in a titanium matrix have been measured using a fiber optic method and related to the reinforcing fiber`s principal stresses. The fiber`s axial stress component has been found to be more than twice that predicted by a concentric cylinder`s (CTE difference) model, while the fiber`s radial (and hoop) direction stresses are smaller than expected. The authors propose that the stress in these composites is affected by two presently unmodeled effects: an elevation of composite`s residual stress due to the large CTE difference between the tooling used for processing of the composite and a relaxation of the transverse stress components by radial matrix cracking. The result has important consequences for the manufacture of metal matrix composites and for efforts to predict their mechanical properties.

  14. The evaluation and measurement of AlGaN epitaxial layer with high Al mole fraction

    NASA Astrophysics Data System (ADS)

    Meng, Zhao; Yu, Libo; Li, Xiao; Liu, Qibin; Duan, Huiqiang; Yu, Chenhui; Chen, Changqing

    2009-08-01

    The epitaxial layer quality of AlxGa1-xN (x>0.6) on sapphire substrate grown by metal organic chemical vapor deposition (MOCVD) needs to be further improved. In this paper, we evaluated the properties of defects, lattice mismatch between epitaxial layer and substrate, crystal quality and conductivity for these high Al mole fraction materials from the viewpoint of fabricating high performance solar blind detectors by comprehensive utilizing various undamaged measurements. The measurement of transmission spectrum was used to evaluate the absorption edge, band gap, mole fraction of Al content, hetero-epitaxial interface, and transmissivity in the ultraviolet spectral range. X-ray diffraction (XRD) was used to measure the component of the AlGaN material, uniformity of the material and crystal quality. The conductivity of the surface layer of the AlGaN film material was obtained by using high precision current-voltage curve measurement. In short, the material quality, optical and electrical properties, and uniformity for high Al mole fraction AlGaN epitaxial layers were qualitatively or quantitatively measured and analyzed. These works lay the foundation for manufacturing high performance solar blind ultraviolet detectors based on high Al mole fraction AlGaN epitaxial materials on sapphire substrate.

  15. Effect of laser spot size on the residual stress field of pure Al treated by laser shock processing: Simulations

    NASA Astrophysics Data System (ADS)

    Dai, F. Z.; Lu, J. Z.; Zhang, Y. K.; Wen, D. P.; Ren, X. D.; Zhou, J. Z.

    2014-10-01

    Laser shock processing (LSP) is a unique surface treatment technique. It induces high-depth compressive residual stresses for improved fatigue or stress corrosion cracking resistance. FEM simulation is an effective method to predict material behavior by LSP. A 2D quarter-infinite model was used to simulate the material behaviors of commercially pure Al by LSP. Different peak pressure with different laser spot diameter was applied to surface of pure Al. Each simulation included two steps: (i) explicit dynamics analysis for the analysis of the LSP; (ii) static equilibrium analysis for springback deformation analysis. The following conclusions could be made: (1) Plastically affected depth increased with the increase of laser spot diameter. There was an ultimate value about plastically affected depth when the laser spot diameter increased to some value, and the ultimate value was consistent with Ballard' model. When the laser spot diameter was small, there still existed tensile residual stresses on the surface layer of material although the peak pressure was below 2.5 HEL. When the diameter laser spot diameter was big enough, the tensile residual stresses on the surface layer of material were converted into compressive residual stresses although the peak pressure was higher than 2.5 HEL.

  16. Trends in residual stress for GaN/AlN/6H-SiC heterostructures

    NASA Astrophysics Data System (ADS)

    Edwards, N. V.; Bremser, M. D.; Davis, R. F.; Batchelor, A. D.; Yoo, S. D.; Karan, C. F.; Aspnes, D. E.

    1998-11-01

    We discuss trends in residual stress as a function of film thickness, growth temperature, and substrate orientation for GaN/AlN/6H-SiC heterostructures. Films are mostly compressive for samples less than about 0.7 ?m thick, are tensile up to about 2 ?m, then abruptly become less tensile with stress values near 1 kbar thereafter. We interpret this as a successive relief of lattice mismatch and thermal stresses culminating in a catastrophic relief by unknown mechanisms at moderate thicknesses. These data indicate that relaxation processes in these heterostructures are not as well understood as previously supposed.

  17. High temperature deformation of a submicron grained Al-12 wt% Ti alloy

    SciTech Connect

    Wang, S.H.; Kao, P.W.

    1997-06-15

    Compressive deformation behavior of a MA Al-12wt%Ti alloy has been studied at 623--773 K with strain rates from 4 {times} 10{sup {minus}5} to 1 {times} 10{sup {minus}1} s{sup {minus}1}. A high stress exponent was observed in the stress dependence of strain rate. By assuming that the presence of a threshold stress is the cause of the high stress exponent, the experimental data were analyzed and compared with existing models. The creep behavior of this alloy is found similar to the dispersion strengthened Al-Al{sub 2}O{sub 3} alloys. It is suggested that the high temperature deformation of this alloy is mainly governed by the fine carbide and oxide strengthened aluminum matrix, which can be described by lattice-diffusion controlled creep with a constant structure. In addition, a strong temperature dependence of the threshold stress was observed. It might be related to certain grain boundary processes and/or thermally activated deformation of strengthening particles.

  18. A critical evaluation of the stress-corrosion cracking mechanism in high-strength aluminum alloys

    NASA Astrophysics Data System (ADS)

    Lee, Seong-Min; Pyun, Su-Il; Chun, Young-Gab

    1991-10-01

    Attempts have been made to elucidate the mechanism of stress-corrosion cracking (SCC) in high-strength Al-Zn-Mg and Al-Li-Zr alloys exposed to aqueous environments by considering the temperature dependence of SCC susceptibility based upon the anodic dissolution and hydrogen embrittlement models. A quantitative correlation which involves the change of threshold stress intensity, K ISCC, with temperature on the basis of anodic dissolution has been developed with the aid of linear elastic fracture mechanics. From the derived correlation, it is concluded that the threshold stress intensity decreases as the test temperature increases. This suggestion is inconsistent with that predicted on the basis of hydrogen embrittlement. It is experimentally observed from the Al-Zn-Mg and Al-Li-Zr alloys that the threshold stress intensity, K,ISCC, decreases and the crack propagation rate, da/dt, over the stress intensity increases with increasing test temperature. From considering the change in SCC susceptibility with temperature, it is suggested that a gradual transition in the mechanism for the stress-corrosion crack propagation occurs from anodic dissolution in stage I, where the crack propagation rate increases sharply with stress intensity, to hydrogen embrittlement in stage II, where the crack propagation rate is independent of stress intensity.

  19. NiAl-Base Composite Containing High Volume Fraction of AIN Particulate for Advanced Engines

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan G.; Whittenberger, J. D.; Lowell, C. E.; Garg, A.

    1995-01-01

    Cryomilling of prealloyed NiAl containing 53 at. % AJ was carried out to achieve high nitrogen levels. The consolidation of cryomilled powder by extrusion or hot pressing/ hot isostatic pressing resulted in a fully dense NiAl-base composite containing 30 vol. % of inhomogeneously distributed, nanosized AIN particulate. The NiAl-30AIN composite exhibited the highest compression yield strengths at all temperatures between 300 and 1300 K as compared with other compositions of NiAl-AIN composite. The NiAl-30AIN specimens tested under compressive creep loading between 1300 and 1500 K also exhibited the highest creep resistance with very little surface oxidation indicating also their superior elevated temperature oxidation resistance. In the high stress exponent regime, the strength is proportional to the square root of the AIN content and in the low stress exponent regime, the influence of AIN content on strength appears to be less dramatic. The specific creep strength of this material at 1300 K is superior to a first generation Ni-base single crystal superalloy. The improvements in elevated temperature creep strength and oxidation resistance have been achieved without sacrificing the room temperature fracture toughness of the NiAl-base material. Based on its attractive combination of properties, the NiAl-30AIN composite is a potential candidate for advanced engine applications,

  20. High-temperature deformation of uniaxially aligned lamellar TiAl/Ti{sub 3}Al

    SciTech Connect

    Heinrich, H.; Abaecherli, V.; Wilkins, D.J.; Kostorz, G.

    1999-07-01

    Uniaxially aligned polysynthetically twinned two-phase TiAl/Ti{sub 3}Al material is produced by induction zone melting and deformed in uniaxial compression. Above 1,000 K the strain rate sensitivity is independent of the lamellar orientation and increases strongly with increasing deformation temperature. Results for the strain rate sensitivity parameters are somewhat lower than those obtained for {gamma}-TiAl single- and polycrystals. If the lamellae are oriented parallel or perpendicular to the deformation axis, the flow stress decreases with increasing strain. After plastic deformation the dislocation density in the lamellae is remarkably low indicating recovery processes. At the lamellar interfaces misfit dislocations and periodic arrangements of dislocations with Burgers vectors inclined to the lamellar boundaries are found. In contrast to deformation at lower temperatures, deformation twinning is rare.

  1. High temperature dispersion strengthening of NiAl

    NASA Technical Reports Server (NTRS)

    Sherman, M.; Vedula, K.

    1986-01-01

    A potential high temperature strengthening mechanism for alloys based on the intermetallic compound NiAl was investigated. This study forms part of an overall program at NASA Lewis Research Center for exploring the potential of alloys based on NiAl for high temperature applications. An alloy containing 2.26 at% Nb and produced by hot extrusion of blended powders was examined in detail using optical and electron microscopy. Interdiffusion between the blended Nb and NiAl powders results in the formation of intermediate phases. A fine dispersion of precipitates of a hexagonal, ordered NiAlNb phases in a matrix of NiAl can be produced and this results in strengthening of the alloy by interfering with dislocation motion at high temperature. These precipitates are, however, found to coarsen during the high temperature (1300 K) deformation at slow strain rates and this may impose some limitatioins on the use of this strengthening mechanism.

  2. Deposition of ultrathin AlN films for high frequency electroacoustic devices

    SciTech Connect

    Felmetsger, Valery V.; Laptev, Pavel N.; Graham, Roger J.

    2011-03-15

    The authors investigate the microstructure, crystal orientation, and residual stress of reactively sputtered aluminum nitride (AlN) films having thicknesses as low as 200 down to 25 nm. A two-step deposition process by the dual cathode ac (40 kHz) powered S-gun magnetron enabling better conditions for AlN nucleation on the surface of the molybdenum (Mo) bottom electrode was developed to enhance crystallinity of ultrathin AlN films. Using the two-step process, the residual in-plane stress as well as the stress gradient through the film thickness can be effectively controlled. X-ray rocking curve measurements have shown that ultrathin films grown on Mo using this technology are highly c-axis oriented with full widths at half maximum of 1.8 deg. and 3.1 deg. for 200- and 25-nm-thick films, respectively, which are equal to or even better than the results previously reported for relatively thick AlN films. High-resolution transmission electron microscopy and fast Fourier transform analyses have confirmed strong grain orientation in 25-100-nm-thick films. A fine columnar texture and a continuous lattice microstructure within a single grain from the interface with the Mo substrate through to the AlN surface have been elicited even in the 25-nm-thick film.

  3. Tropical soils with high aluminum concentrations cause oxidative stress in two tomato genotypes.

    PubMed

    Nogueirol, Roberta Corra; Monteiro, Francisco Antonio; Grato, Priscila Lupino; Borgo, Luclia; Azevedo, Ricardo Antunes

    2015-03-01

    Tropical and subtropical soils are usually acidic and have high concentrations of aluminum (Al). Aluminum toxicity in plants is caused by the high affinity of the Al cation for cell walls, membranes, and metabolites. In this study, the response of the antioxidant-enzymatic system to Al was examined in two tomato genotypes: Solanum lycopersicum var. esculentum (Calabash Rouge) and Solanum lycopersicum var. cerasiforme (CNPH 0082) grown in tropical soils with varying levels of Al. Plant growth; activities of superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), guaiacol peroxidase (GPOX), and glutathione reductase (GR) enzymes; stress-indicating compounds (malondialdehyde (MDA) and hydrogen peroxide); and morphology (root length and surface area) were analyzed. Increased levels of Al in soils were correlated with reduced shoot and root biomass and with reduced root length and surface area. Calabash Rouge exhibited low Al concentrations and increased growth in soils with the highest levels of Al. Plants grown in soils with high availability of Al exhibited higher levels of stress indicators (MDA and hydrogen peroxide) and higher enzyme activity (CAT, APX, GPOX, and GR). Calabash Rouge absorbed less Al from soils than CNPH 0082, which suggests that the genotype may possess mechanisms for Al tolerance. PMID:25647795

  4. Evolution of residual stresses in micro-arc oxidation ceramic coatings on 6061 Al alloy

    NASA Astrophysics Data System (ADS)

    Shen, Dejiu; Cai, Jingrui; Guo, Changhong; Liu, Peiyu

    2013-11-01

    Most researches on micro-arc oxidation mainly focus on the application rather than discovering the evolution of residual stresses. However, residual stresses in the surface coatings of structural components have adverse effects on their properties, such as fatigue life, dimensional stability and corrosion resistance, etc. The micro-arc oxidation ceramic coatings are produced on the surfaces of 6061 aluminum alloy by a homemade asymmetric AC type of micro-arc oxidation equipment of 20 kW. A constant current density of 4.40.1 A/dm2 and a self-regulated composite electrolyte are used. The micro-arc oxidation treatment period ranges from 10 min to 40 min, and the thickness of the ceramic coatings is more than 20 ?m. Residual stresses attributed to ?-Al2O3 constituent in the coatings at different micro-arc oxidation periods are analyzed by an X-ray diffractometer using the sin2 ? method. The analysis results show that the residual stress in the ceramic coatings is compressive in nature, and it increases first and then decreases with micro-arc oxidation time increase. The maximum stress value is 1 66720 MPa for period of 20 min. Through analyzing the coating thickness, surface morphology and phase composition, it is found that the residual stress in the ceramic coatings is linked closely with the coating growth, the phase composition and the micro cracks formed. It is also found that both the heat treatment and the ultrasonic action release remarkably the residual compressive stress. The heat treatment makes the residual compressive stress value decrease 1 378 MPa. The ultrasonic action even alters the nature of the residual stress, making the residual compressive stress change into a residual tensile stress.

  5. Time-dependent stress concentration and microcrack nucleation in TiAl

    SciTech Connect

    Yoo, M.H.

    1995-07-01

    Localized stress evolution associated with the interaction of slip or twinning with an interface is treated by means of a superposition of the {open_quotes}internal loading{close_quotes} of a crystalline subsystem by dynamic dislocation pile-up and the stress relaxation by climb of interfacial dislocations. The peak value of a stress concentration factor depends on both the angular function that includes the effect of mode mixity and the ratio of characteristic times for stress relaxation and internal loading. The available experimental data on orientation and strain-rate dependences of interfacial fracture mode in polysynthetically twinned TiAl crystals are discussed in view of the theoretical concepts presented in this paper.

  6. Effect of particle bombardment on the orientation and the residual stress of sputtered AlN films for SAW devices.

    PubMed

    Iborra, Enrique; Clement, Marta; Sangrador, Jess; Sanz-Hervs, Alfredo; Vergara, Luca; Aguilar, Miguel

    2004-03-01

    We present a study of the effect of particle bombardment on the preferred orientation and the residual stress of polycrystalline aluminum nitride (AlN) thin films for surface acoustic wave (SAW) applications. Films were deposited on silicon (100) substrates by radio frequency (RF) sputtering of an aluminum target in an argon and nitrogen gas mixture. The main deposition parameters were changed as follows: the total pressure from 4 mTorr to 11 mTorr, the N2 content in the gas mixture from 20% to 80%, and the substrate self-bias voltage from -10 V to -30 V. If a sufficiently high negative substrate self-bias voltage is induced, (00.2)-oriented films are obtained over the full ranges of pressure and N2 content. Such films have values of residual stress ranging from -3 GPa to +1 GPa, depending on the deposition conditions. Our results suggest that the energy of the Ar ions colliding with the substrate controls the preferred orientation of the films, whereas the directionality of the ions (for the same energy) is the main factor determining the residual stress. To demonstrate the suitability of our material for the intended application, SAW filters with good electroacoustic response have been fabricated using AlN thin films with optimized (00.2) orientation and controlled residual stress. PMID:15128222

  7. Stress investigation of the AlGaN/GaN micromachined circular diaphragms of a pressure sensor

    NASA Astrophysics Data System (ADS)

    Dzuba, J.; Vanko, G.; Drk, M.; Rger, I.; Vallo, M.; Kuti, V.; Hako, D.; Choleva, P.; Lalinsk, T.

    2015-01-01

    In this paper, selected mechanical properties of a circular AlGaN/GaN diaphragm with an integrated circular high electron mobility transistor (HEMT) intended for pressure sensing are investigated. Two independent methods were used to determine the residual stress in the proposed diaphragms. The resonant frequency method using laser Doppler vibrometry (LDV) for vibration measurement was chosen to measure the natural frequencies while the diaphragms were excited by acoustic impulse. It is shown that resonant frequency is strongly dependent on the built-in residual stress. The finite element analysis (FEM) in Ansys software was performed to determine the stress value from frequency spectra measured. The transition behavior of proposed diaphragms between the ideal circular membrane and plate is observed and discussed. Secondly, the bulging method and white light interferometry (WLI) are used to determine the stress-dependent deflection response of the AlGaN/GaN diaphragm under static pressure loading. Regarding the results obtained, the optimal design of the sensing electrodes is outlined.

  8. Growth strains and stress relaxation in alumina scales during high temperature oxidation

    SciTech Connect

    Hou, P.Y.; Paulikas, A.P.; Veal, B.W.

    2004-03-23

    A novel X-ray technique was used, exploiting synchrotron radiation at the Advanced Photon Source at Argonne National Laboratory, to investigate the growth stresses in {alpha}-Al{sub 2}O{sub 3}. In-situ measurements of Debye-Scherrer diffraction patterns from the scale were recorded during oxidation and cooling, and the elliptical distortion of the diffraction rings was analyzed to yield the in-plane strain. Fe-28Al, Fe-40Al, Fe-40Al-0.2Hf, Fe-20Cr-10Al and Ni-50Al (at. %) were studied. Data were acquired in air at temperatures between 950-1100 C and during cool down. In all cases, the steady stage growth strain was relatively low (<0.1%) and was either tensile or compressive depending on the alloy. A higher tensile strain often existed during the initial oxidation period when transition alumina was present. Thermal stresses imposed on NiAl by reducing the sample temperature to 950 C for a period of time showed noticeable stress relaxation by creep. Different degrees of relaxation were also found during cooling depending on alloy composition and scale microstructure. On all Fe-based alloys, the first formed {alpha}-Al{sub 2}O{sub 3} was highly textured with the degree of texture decreasing with further oxidation. The relationships between stress development, scale wrinkling, oxide phase changes, and the effect of reactive element addition on growth stresses are discussed. Results are compared with other reports of growth stresses in Al{sub 2}O{sub 3} scales.

  9. Magnetic properties and high frequency characteristics of FeCoAlON alloy films

    NASA Astrophysics Data System (ADS)

    Zheng, Kuohai; Yang, Shengsheng; Zheng, Fu; Luo, Feilong; Bai, Jianmin; Cao, Jiangwei; Wei, Fulin

    2015-06-01

    In this work, we report the magnetic properties, domain structures and high frequency properties of FeCoAlON alloy films prepared by reactive magnetron sputtering. With increasing N addition content, the films transfer from in-plane anisotropic properties to isotropic behavior. The obvious stripe domain structure is observed in the films with high N content, and the domain parameters depend on the thickness of the films. The XRD analysis indicates that the stripe domain may origin from the stress-induced perpendicular anisotropy by Al, O and N addition. Meanwhile, a double-peak resonance behavior is observed in the permeability spectra of the films with stripe domain structure.

  10. Observation of morphology and stress distribution around dislocation in Ni3Al on the atomic scale

    NASA Astrophysics Data System (ADS)

    Ma, S. Y.; Ren, N. N.; Zhang, J. X.

    2015-06-01

    Dislocation is very important for the properties of materials. In this work, morphology and stress distribution around dislocation in Ni3Al are observed in atomic scale by the molecular dynamics. We obtained the dislocation morphology by the simulation and found that the atom distribution around the dislocation core is irregular. Layers of atoms on both the left and right sides of the dislocation core leans to the core, and about six layers of atoms are fractured due to the missing of the half plane of atoms. Along the [1 1 1] direction, there are about eight layers of atoms deviating from its equilibrium position. These results demonstrated that influenced area of dislocation is pipe-like. The stress distribution agrees with the results from the formula. Both normal stress and shear stress components exist in the edge dislocation stress field, normal stress mainly concentrating on two sides of the dislocation line, while the shear stress exist several angstrom away from the dislocation line.

  11. The rate dependence of the saturation flow stress of Cu and 1100 Al

    SciTech Connect

    Preston, D.L.; Tonks, D.L.; Wallace, D.C.

    1991-01-01

    The strain-rate dependence of the saturation flow stress of OFHC Cu and 1100 Al from 10{sup {minus}3}s{sup {minus}1} to nearly to 10{sup 12}s{sup {minus}1} is examined. The flow stress above 10{sup 9}s{sup {minus}1} is estimated using Wallace's theory of overdriven shocks in metals. A transition to the power-law behavior {Psi} {approximately} {tau}{sub s}{sup 5} occurs at a strain rate of order 10{sup 5}s{sup {minus}1}. 10 refs., 2 figs.

  12. High temperature oxidation behavior of TiAl-based intermetallics

    SciTech Connect

    Stroosnijder, M.F.; Sunderkoetter, J.D.; Haanappel, V.A.C.

    1996-10-01

    TiAl-based intermetallic compounds have attracted considerable interest as structural materials for high-temperature applications due to their low density and substantial mechanical strength at high temperatures. However, one major drawback hindering industrial application arises from the insufficient oxidation resistance at temperatures beyond 700 C. In the present contribution some general aspects of high temperature oxidation of TiAl-based intermetallics will be presented. This will be followed by a discussion of the influence of alloying elements, in particular niobium, and of the effect of nitrogen in the oxidizing environment on the high temperature oxidation behavior of such materials.

  13. Crystallized Ohmic Contact Effect in AlGaN/GaN High Electron Mobility Transistor

    NASA Astrophysics Data System (ADS)

    Liao, Sheng Yu; Chang, Tsu; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Chang, Liann-Be; Cheng, Chin-Pao; Teng, Tun-Chien

    2013-08-01

    In this study, we investigate the grain size effect of high electron mobility transistor devices with ohmic contact metals of stacked Ti/Al/Ni/Au and Ti/Al/Mo/Au. In addition to a comparison of electrical characteristics, the ohmic contacts were also examined by a scratch test for the observation of adhesion behavior. The experimental results demonstrate that the metal grain size is strongly dependent on metal adhesion, which may lead to bonding issues. Moreover, the grain-induced lateral stress lowers the drive current and increases the off-state current owing to the degraded gate swing and transconductance of transistor switching characteristics.

  14. High School Seniors Tell Why They Are "Stressed Out."

    ERIC Educational Resources Information Center

    Amen, John; Reglin, Gary

    1992-01-01

    Determines through the analysis of data collected from students the primary causes of stress among high school seniors. Presents research findings based on 348 responses to open-ended questions regarding stress. Lists stresses in six categories: school, family, employment, intimate relationships, friends/peers, and worrying about college. (HB)

  15. Nrf2/ARE Signaling Pathway: Key Mediator in Oxidative Stress and Potential Therapeutic Target in ALS

    PubMed Central

    Petri, Susanne; Krner, Sonja; Kiaei, Mahmoud

    2012-01-01

    Nrf2 (nuclear erythroid 2-related factor 2) is a basic region leucine-zipper transcription factor which binds to the antioxidant response element (ARE) and thereby regulates the expression of a large battery of genes involved in the cellular antioxidant and anti-inflammatory defence as well as mitochondrial protection. As oxidative stress, inflammation and mitochondrial dysfunctions have been identified as important pathomechanisms in amyotrophic lateral sclerosis (ALS), this signaling cascade has gained interest both with respect to ALS pathogenesis and therapy. Nrf2 and Keap1 expressions are reduced in motor neurons in postmortem ALS tissue. Nrf2-activating compounds have shown therapeutic efficacy in the ALS mouse model and other neurodegenerative disease models. Alterations in Nrf2 and Keap1 expression and dysregulation of the Nrf2/ARE signalling program could contribute to the chronic motor neuron degeneration in ALS and other neurodegenerative diseases. Therefore, Nrf2 emerges as a key neuroprotective molecule in neurodegenerative diseases. Our recent studies strongly support that the Nrf2/ARE signalling pathway is an important mediator of neuroprotection and therefore represents a promising target for development of novel therapies against ALS, Parkinson's disease (PD), Huntington's disease (HD), and Alzheimer's disease (AD). PMID:23050144

  16. Stress-diffusion interaction during oxidation at high temperature

    NASA Astrophysics Data System (ADS)

    Dong, Xuelin; Feng, Xue; Hwang, Keh-Chih

    2014-10-01

    Superalloy or other thermal protective materials are often oxidized seriously at high temperature. For most materials diffusion is the controlling step of oxidation. During oxidation, stress would be induced by growth strain and it can affect the diffusion process through chemical potential and diffusivity. Governing equation for diffusion is derived considering chemo-mechanical potential and diffusivity affected by stress. Oxidation kinetics is obtained to interpret the stress-diffusion coupling effects. The stress and its gradient influences on oxidation are also discussed.

  17. Particle weakening in superplastic SiC/2124 Al composites at high temperature

    SciTech Connect

    Kim, W.J.; Sherby, O.D.

    2000-05-11

    High-strain-rate superplastic behavior of powder-metallurgy-processed 2124 Al matrix alloy and 10%, 20%, and 30% SiC particulate reinforced 2124 Al composites were investigated over the temperature range from 370 C to 565 C, and the strain rate range from 10{sup {minus}4}/s to 1/s. The true activation energy for the plastic flow after threshold stress compensation was close to that for lattice diffusion in aluminum for the 2124 Al alloy, while the activation energies for the 2124 composites were considerably higher than those for the unreinforced alloy, increasing with an increase in the volume fraction of SiC. The strength of the 2124 Al composites is lower than the strength of the 2124 Al alloy at high temperatures. The strength differential between the unreinforced and reinforced 2124 Al alloys is a function of temperature and is seen to decrease systematically with decrease in temperature and virtually vanishes at 460 C. Particle weakening is discussed in the light of load transfer effect, interphase diffusion, dissolution of second phase particles into matrix and the presence of liquid phase. It is proposed that interphase weakening, possibly with some liquid formation, is the principal factor contributing to the results obtained. Interphase and boundary sliding is believed to be the rate-controlling process in plastic flow of the SiC/2124 Al composites.

  18. ZERODUR glass ceramics for high stress applications

    NASA Astrophysics Data System (ADS)

    Hartmann, Peter; Nattermann, Kurt; Dhring, Thorsten; Jedamzik, Ralf; Kuhr, Markus; Thomas, Peter; Kling, Guenther; Lucarelli, Stefano

    2009-08-01

    Recently SCHOTT has shown in a series of investigations the suitability of the zero expansion glass ceramic material ZERODUR for applications like mirrors and support structures of complicated design used at high mechanical loads. Examples are vibrations during rocket launches, bonded elements to support single mirrors or mirrors of a large array, or controlled deformations for optical image correction, i.e. adaptive mirrors. Additional measurements have been performed on the behavior of ZERODUR with respect to the etching process, which is capable of increasing strength significantly. It has been determined, which minimum layer thickness has to be removed in order to achieve the strength increase reliably. New data for the strength of the material variant ZERODUR K20 prepared with a diamond grain tool D151 are available and compared with the data of ZERODUR specimens prepared in the same way. Data for the stress corrosion coefficient n of ZERODUR for dry and normal humid environment have been measured already in the 1980s. It has been remeasured with the alternative double cleavage drilled compression (DCDC) method.

  19. High horizontal stress effects on longwall gate entry stability

    SciTech Connect

    Wang, Yajie; Peng, S.S.

    1996-12-01

    High horizontal stress and its adverse effects on longwall gate entries have been witnessed in many US coal mines for the past years. It can cause cutter roofs and leads to roof falls either in the headgate or tailgate entries depending on the relative orientation of the panel to the maximum principal horizontal stress. Underground observations have shown that if the maximum principal horizontal stress is perpendicular to the panel entries, the roof is in the worst condition and if the maximum principal horizontal stress is parallel to the entries, the entry is in the best condition. However, little has been done about the high horizontal stress effects on panel entries subject to different orientations of high horizontal stress. In order to design a longwall panel and control the roof effectively, the redistribution and concentration of high horizontal stress field must be fully understood. Using 3-D finite element analysis, this paper presents the high horizontal stress redistribution and concentration for a retreat longwall face with different orientations of high horizontal stress. Based on the results, possible roof failures for different orientations of high horizontal stress are analyzed. A panel design criterion is recommended.

  20. Coping with the Stress of High Stakes Testing

    ERIC Educational Resources Information Center

    Kruger, Louis J.; Wandle, Caroline; Struzziero, Joan

    2007-01-01

    High stakes testing puts considerable pressure on schools, teachers, and students to achieve at high levels. Therefore, how schools and individuals cope with this major source of stress may have important implications for the success of high stakes testing. This article reviews relevant theory and research on stress as they relate to public

  1. High-temperature Oxidation Resistance of Al2O3-Au Laminated Composite Coating Prepared on TiAl-based Alloy

    NASA Astrophysics Data System (ADS)

    Ma, Xiaoxu; He, Yedong; Wang, Deren; Lin, Junpin; Gao, Wei

    2012-04-01

    Novel composite coatings consist of Al2O3 micro-layers alternating with Au nano-layers have been prepared on TiAl-based alloy by magnetron sputtering. The results of high-temperature cyclic oxidation test at 900 C for 200 h revealed that the multi-sealed ?-Al2O3 and Au layers effectively suppress the inward diffusion of oxygen to a low level. The formed oxide scales and composite coatings are compact and free of cracks. The thermal stress is decreased owing to the increase of thermal-expansion coefficient. And the surface scratch test exhibited that the brittle/ductile laminated structure can remarkably enhance the strength and toughness in combination with improved damage resistance of the Al2O3-Au laminated composite coatings. Consequently, the oxidation and spallation resistance of TiAl-based alloy have been improved significantly.

  2. In situ Formed ?-Al2O3 Nanocrystals Repaired the Preexisting Microcracks in Plasma-Sprayed Al2O3 Coating via Stress-Induced Phase Transformation

    NASA Astrophysics Data System (ADS)

    Yang, Kai; Feng, Jingwei; Rong, Jian; Liu, Chenguang; Tao, Shunyan; Ding, Chuanxian

    2015-12-01

    In the present study, the phase composition and generation mechanism of the nanocrystals located in the microcracks of plasma-sprayed Al2O3 coating were reevaluated. The Al2O3 coatings were investigated using transmission electron microscopy and x-ray diffraction. We supply the detailed explanations to support the new viewpoint that in situ formation of ?-Al2O3 nanocrystals in the preexisting microcracks of the as-sprayed Al2O3 coating may be due to the stress-induced phase transformation. Owing to the partially coherent relationship, the phase interfaces between the ?-Al2O3 nanocrystals with the preferred orientation and the ?-Al2O3 matrix may possess better bonding strength. The ?-Al2O3 nanocrystals could repair the microcracks in the coating, which further strengthens grain boundaries. Grain boundary strengthening is beneficial to the coating fracture toughness enhancement.

  3. Stress corrosion cracking of sensitized AA5083 (Al-4.5Mg-1.0Mn)

    NASA Astrophysics Data System (ADS)

    Searles, J. L.; Gouma, P. I.; Buchheit, R. G.

    2001-11-01

    The AA5083 (Al-4.4Mg-0.7Mn-0.15Cr) alloy is a nonheat-treatable aluminum alloy known for its excellent corrosion resistance. However, it can become susceptible to intergranular stress corrosion cracking (IGSCC) when exposed to temperatures ranging from 50 C to 200 C for sufficient lengths of time. This IGSCC is widely believed to be associated with dissolution of the electrochemically active ? phase, Al3Mg2, which is precipitated on grain boundaries. Recently, alternative mechanisms have been invoked related to hydrogen effects and/or free Mg segregation or depletion in the grainboundary regions. To establish a baseline for the sensitization effect, constant-extension-rate tests (CERTs) were conducted under open-circuit conditions and under potential control in 3.5 pct NaCl on samples isothermally treated at 150 C. To aid in interpreting the CERT results, grain-boundary precipitation and solute depletion were characterized by transmission electron microscopy (TEM). Additionally, the electrochemical behavior of the ? phase was characterized by anodic polarization of the intermetallic compound synthesized in bulk form. In CERTs under open-circuit conditions, the measured ductility depended strongly on sensitization time, reaching a minimum at 189 hours, followed by a slight increase at longer times. This trend correlated well with the fractional coverage of ? phase on grain boundaries, which increased up to 189 hours, where it existed with nearly continuous coverage. At longer times, this film coarsened and became discontinuous. Correspondingly, some resistance to IGSCC was recovered. In polarization experiments, bulk synthesized ? phase was found to be spontaneously passive from its corrosion potential (-1.40 VSCE) up to about -0.92 VSCE, where passivity was observed to break down. Sensitized AA5083 samples polarized below the ?-phase breakdown potential showed almost no evidence of IGSCC, indicating that a high ? dissolution rate is a requirement for IGSCC. Mg-depleted zones were observed along grain boundaries in sensitized alloys, but a clear role for solute depletion in IGSCC could not be defined on the basis of the results developed in this study.

  4. Thermal stress in high temperature cylindrical fasteners

    NASA Technical Reports Server (NTRS)

    Blosser, Max L.

    1988-01-01

    Uninsulated structures fabricated from carbon or silicon-based materials, which are allowed to become hot during flight, are attractive for the design of some components of hypersonic vehicles. They have the potential to reduce weight and increase vehicle efficiency. Because of manufacturing contraints, these structures will consist of parts which must be fastened together. The thermal expansion mismatch between conventional metal fasteners and carbon or silicon-based structural materials may make it difficult to design a structural joint which is tight over the operational temperature range without exceeding allowable stress limits. In this study, algebraic, closed-form solutions for calculating the thermal stresses resulting from radial thermal expansion mismatch around a cylindrical fastener are developed. These solutions permit a designer to quickly evaluate many combinations of materials for the fastener and the structure. Using the algebraic equations developed, material properties and joint geometry were varied to determine their effect on thermal stresses. Finite element analyses were used to verify that the closed-form solutions derived give the correct thermal stress distribution around a cylindrical fastener and to investigate the effect of some of the simplifying assumptions made in developing the closed-form solutions for thermal stresses.

  5. Energetic-particle synthesis of high-strength Al(O) alloys

    SciTech Connect

    Follstaedt, D.M.; Knapp, J.A.; Barbour, J.C.; Myers, S.M.; Dugger, M.T.

    1995-09-28

    High-strength Al(O) alloys, initially discovered by ion implantation, have now been produced with electron-cyclotron resonance plasma deposition and pulsed-laser deposition. The mechanical properties of these deposited alloy layers were examined with nanoindentation, and finite element modeling of the indented layer on Si substrates was used to determine yield stresses for the alloys of {approximately} 1--5 GPa. The key to these high strengths is the high density of nanometer-size {gamma}-Al{sub 2}O{sub 3} precipitates formed when high concentrations (5--30 at.%) of oxygen are introduced into aluminum as individual atoms or molecules. The strongest alloys have precipitates as small as 1 nm, implying that such small precipitates block dislocation motion. Based upon previous studies with oxygen-implanted aluminum, improved tribological properties are expected for layers made by the two new deposition methods.

  6. Ab initio local energy and local stress: application to tilt and twist grain boundaries in Cu and Al.

    PubMed

    Wang, Hao; Kohyama, Masanori; Tanaka, Shingo; Shiihara, Yoshinori

    2013-07-31

    The energy-density and stress-density schemes (Shiihara etal 2010 Phys. Rev. B 81 075441) within the projector augmented wave (PAW) method based on the generalized gradient approximation (GGA) have been applied to tilt and twist grain boundaries (GBs) and single vacancies in Cu and Al. Local energy and local stress at GBs and defects are obtained by integrating the energy and stress densities in each local region by the Bader integration using a recent algorithm (Yu etal 2011 J. Chem. Phys. 134 064111) as well as by the layer-by-layer integration so as to settle the gauge-dependent problem in the kinetic terms. Results are compared with those by the fuzzy-Voronoi integration and by the embedded atom method (EAM). The features of local energy and local stress at GBs and vacancies depend on the bonding nature of each material. Valence electrons in Al mainly located in the interatomic regions show remarkable response to structural disorder as significant valence charge redistribution or bond reconstruction, often leading to long-range variations of charges, energies and stresses, quite differently from d electrons in Cu mainly located near nuclei. All these features can be well represented by our local energy and local stress. The EAM potential for Al does not reproduce correct local energy or local stress, while the EAM potential for Cu provides satisfactory results. PMID:23835349

  7. Ab initio local energy and local stress: application to tilt and twist grain boundaries in Cu and Al

    NASA Astrophysics Data System (ADS)

    Wang, Hao; Kohyama, Masanori; Tanaka, Shingo; Shiihara, Yoshinori

    2013-07-01

    The energy-density and stress-density schemes (Shiihara et al 2010 Phys. Rev. B 81 075441) within the projector augmented wave (PAW) method based on the generalized gradient approximation (GGA) have been applied to tilt and twist grain boundaries (GBs) and single vacancies in Cu and Al. Local energy and local stress at GBs and defects are obtained by integrating the energy and stress densities in each local region by the Bader integration using a recent algorithm (Yu et al 2011 J. Chem. Phys. 134 064111) as well as by the layer-by-layer integration so as to settle the gauge-dependent problem in the kinetic terms. Results are compared with those by the fuzzy-Voronoi integration and by the embedded atom method (EAM). The features of local energy and local stress at GBs and vacancies depend on the bonding nature of each material. Valence electrons in Al mainly located in the interatomic regions show remarkable response to structural disorder as significant valence charge redistribution or bond reconstruction, often leading to long-range variations of charges, energies and stresses, quite differently from d electrons in Cu mainly located near nuclei. All these features can be well represented by our local energy and local stress. The EAM potential for Al does not reproduce correct local energy or local stress, while the EAM potential for Cu provides satisfactory results.

  8. Low-stress and high-stress singing have contrasting effects on glucocorticoid response

    PubMed Central

    Fancourt, Daisy; Aufegger, Lisa; Williamon, Aaron

    2015-01-01

    Performing music in public is widely recognized as a potentially stress-inducing activity. However, despite the interest in music performance as an acute psychosocial stressor, there has been relatively little research on the effects of public performance on the endocrine system. This study examined the impact of singing in a low-stress performance situation and a high-stress live concert on levels of glucocorticoids (cortisol and cortisone) in 15 professional singers. The results showed a significant decrease in both cortisol and cortisone across the low-stress condition, suggesting that singing in itself is a stress-reducing (and possibly health-promoting) activity, but significant increases across the high-stress condition. This is the first study to demonstrate that singing affects cortisol as well as cortisone responses and that these responses are modulated by the conditions of performance. PMID:26388794

  9. On the stress corrosion cracking of Al-Li alloys: The role of grain boundary precipitates

    NASA Astrophysics Data System (ADS)

    Ricker, R. E.; Fink, J. L.; Vasudvan, A. K.

    1991-01-01

    The stress corrosion cracking (SCC) behavior of precipitation-hardened alloys may depend on a large number of microstructural parameters that vary during fabrication and heat treatment, such as grain size, grain boundary (GB) solute segregation, matrix precipitate size, GB precipitate size, precipitate-free zone size, and matrix slip character.[1] Since all of these factors vary simultaneously during normal heat treatments, it is difficult to assess independently the contribution of each microstructural factor to the SCC behavior of an alloy. In particular, a series of experiments was designed which would allow the evaluation of the role of GB precipitates in the SCC behavior of Al-Li and Al-Li-Cu alloys independent of the other factors (such as matrix precipitate microstructure) that normally vary during aging treatments. For these experiments, the matrix precipitates of a binary Al-Li alloy were held constant, keeping the yield strength constant, while the GB precipitate size and volume percent were systematically varied. In contrast, to keep the yield strength of the ternary Al-Li-Cu alloy constant at the same level as the binary alloy, the matrix precipitate size and distribution were varied with the GB precipitate size.

  10. Neutron-diffraction measurement of residual stresses in Al-Cu cold-cut welding

    NASA Astrophysics Data System (ADS)

    Fiori, F.; Marcantoni, M.

    Usually, when it is necessary to join different materials with a large difference in their melting points, welding should be avoided. To overcome this problem we designed and built a device to obtain cold-cut welding, which is able to strongly decrease oxidation problems of the surfaces to be welded. Thanks to this device it is possible to achieve good joining between different pairs of materials (Al-Ti, Cu-Al, Cu-Al alloys) without reaching the material melting point. The mechanical and microstructural characterisation of the joining and the validation of its quality were obtained using several experimental methods. In particular, in this work neutron-diffraction experiments for the evaluation of residual stresses in Cu-Al junctions are described, carried out at the G5.2 diffractometer of LLB, Saclay. Neutron-diffraction results are presented and related to other experimental tests such as microstructural characterisation (through optical and scanning electron microscopy) and mechanical characterisation (tensile-strength tests) of the welded interface.

  11. ALS Patient Stem Cells for Unveiling Disease Signatures of Motoneuron Susceptibility: Perspectives on the Deadly Mitochondria, ER Stress and Calcium Triad

    PubMed Central

    Kaus, Anjoscha; Sareen, Dhruv

    2015-01-01

    Amyotrophic lateral sclerosis (ALS) is a largely sporadic progressive neurodegenerative disease affecting upper and lower motoneurons (MNs) whose specific etiology is incompletely understood. Mutations in superoxide dismutase-1 (SOD1), TAR DNA-binding protein 43 (TARDBP/TDP-43) and C9orf72, have been identified in subsets of familial and sporadic patients. Key associated molecular and neuropathological features include ubiquitinated TDP-43 inclusions, stress granules, aggregated dipeptide proteins from mutant C9orf72 transcripts, altered mitochondrial ultrastructure, dysregulated calcium homeostasis, oxidative and endoplasmic reticulum (ER) stress, and an unfolded protein response (UPR). Such impairments have been documented in ALS animal models; however, whether these mechanisms are initiating factors or later consequential events leading to MN vulnerability in ALS patients is debatable. Human induced pluripotent stem cells (iPSCs) are a valuable tool that could resolve this “chicken or egg” causality dilemma. Relevant systems for probing pathophysiologically affected cells from large numbers of ALS patients and discovering phenotypic disease signatures of early MN susceptibility are described. Performing unbiased ‘OMICS and high-throughput screening in relevant neural cells from a cohort of ALS patient iPSCs, and rescuing mitochondrial and ER stress impairments, can identify targeted therapeutics for increasing MN longevity in ALS. PMID:26635528

  12. Implications of tangential shear stress induced failure during transverse loading of SiC/Ti-6Al-4V composites

    SciTech Connect

    Warrier, S.G.; Majumdar, B.S.; Gundel, D.B.; Miracle, D.B.

    1997-08-01

    During transverse loading of fiber-matrix composites, the interface is subjected to both tangential shear stresses and radial stresses. Interface failure in several carbon/carbon-rich coated SiC Ti-6Al-4V composites can occur by tangential shear stresses before the observed non-linearity in the experimental stress-strain curve due to normal interface separation. In this study, the effect of frictional sliding before normal interface separation on the stress redistribution and the stress-strain response of SiC Ti-6Al-4V composites was examined using finite element analysis. The interface was modeled by contact elements with varying coefficients of friction, representing two different types of carbon/carbon-rich composite interfaces. Results indicate that stress redistribution due to tangential shear sliding may significantly modify both interface radial stress distribution and matrix hoop stress. The matrix equivalent stresses, however, are not significantly affected by tangential shear sliding until normal interface separation occurs. A methodology and pertinent plots are provided for determining the stress concentration factor and the normal bond strength of an interface where tangential shear sliding is known to occur. Using this approach, the normal bond strengths for the Trimarc 1/Ti-6Al-4V and the SCS-6/Ti-6Al-4V interfaces were estimated as 40 MPa and 145 MPa, respectively. These values are significantly higher than those calculated without considering frictional sliding. The progression of interface failure under transverse loading and its effects on the stress-strain response is also discussed.

  13. Texture and microstructure development in Al-2%Mg during high- temperature deformation

    SciTech Connect

    Chen, S.R.; Kocks, U.F.

    1990-12-01

    The high rate sensitivity of the flow stress that is exhibited by alloys under solute drag control, such as Al-Mg at high temperatures, influences texture development because more slip systems contribute to deformation. Al-2% Mg was tested in channel-die compression, i.e. idealized rolling, at 290{degree}C and 400{degree}C, at strain rates from 10{sup {minus}1}/s to 10{sup {minus}5}/s. The texture development in rolling predicted by polycrystal plasticity simulation indicates that the brass component increases while the copper component decreases when the rate sensitivity is raised. The experimental results are in good agreement with this prediction. In addition, cube component appears when microstructural change occurs due to dynamic recrystallization. This microstructural change leads to the shift from {l angle}011{r angle} to {l angle}001{r angle} fiber texture in free compression at high temperature. 18 refs., 13 figs.

  14. ?-MnAl with high coercivity and saturation magnetization

    SciTech Connect

    Wei, J. Z.; Song, Z. G.; Yang, Y. B.; Liu, S. Q.; Du, H. L.; Han, J. Z.; Zhou, D.; Wang, C. S.; Yang, Y. C.; Franz, A.; Tbbens, D.; Yang, J. B.

    2014-12-15

    In this paper, high purity ?-Mn{sub 54}Al{sub 46} and Mn{sub 54?x}Al{sub 46}C{sub x}alloys were successfully prepared using conventional arc-melting, melt-spinning, and heat treatment process. The magnetic and the structural properties were examined using x-ray diffraction (XRD), powder neutron diffraction and magnetic measurements. A room temperature saturation magnetization of 650.5 kAm{sup -1}, coercivity of 0.5 T, and a maximum energy product of (BH){sub max} = 24.7 kJm{sup -3} were achieved for the pure Mn{sub 54}Al{sub 46} powders without carbon doping. The carbon substituted Mn{sub 54?x}Al{sub 46}C{sub x}, however, reveals a lower Curie temperature but similar saturation magnetization as compared to the carbon-free sample. The electronic structure of MnAl shows that the Mn atom possesses a magnetic moment of 2.454 ?{sub B} which results from strong hybridization between Mn-Al and Mn-Mn. We also investigated the volume and c/a ratio dependence of the magnetic moments of Mn and Al. The results indicate that an increase in the intra-atomic exchange splitting due to the cell volume expansion, leads to a large magnetic moment for the Mn atom. The Mn magnetic moment can reach a value of 2.9 ?{sub B} at a volume expansion rate of ?V/V ? 20%.

  15. Relation between surface slip topography and stress corrosion cracking in Ti-8 wt % Al

    NASA Technical Reports Server (NTRS)

    Boyd, J. D.; Hoagland, R. G.

    1974-01-01

    The deformation behavior of Ti-8 wt % Al has been investigated in an inert environment (air), and an aggressive environment (salt water). Details of surface slip geometry were examined by high resolution surface replicas at various stages of deformation in both environments. Specimens aged to contain a fine dispersion of Ti3Al precipitates failed by subcritical crack growth in salt water, whereas specimens in the single phase condition showed no effects of environment on the yield or fracture characteristics. The Ti3Al precipitates produce little change in strength level or slip character compared to the single phase alloy, and there is no evidence of any effects of environment on the character of surface slip. Rather, the presence of trenches along slip bands on the surface of aged specimens suggest that the specific effect of the Ti3Al precipitates is to render the surface slip steps chemically active relative to the surrounding matrix by slip induced dissolution of the particles.

  16. Phase transformation in rapidly solidified Al-Al2O3 alloys by high-frequency melting

    NASA Astrophysics Data System (ADS)

    Bourbia, A.; Boulkhessaim, S.; Bedboudi, H.; Draissia, M.

    2012-05-01

    The microstructure properties of rapidly solidified Al-0-40 wt% (?-Al2O3) alloys by high-frequency (HF) melting were investigated by means of x-ray diffraction measurements, optical observations and combined scanning electronic microscopy and energy-dispersive x-ray spectroscopy (SEM/EDX) analyses. Phase transformation was correlated by heat treatment with pure Al and solid ?-Al2O3 alumina spectra. It was found that the microstructure is a solid solution of the Al phase with a notable solubility of ?-Al2O3 in the Al matrix for lower contents. For 4wt.% of alumina compositions and above, it was a mixture of phases, Al solid solution and ?-Al2O3, with a tendency to reach the ?-Al2O3 alumina morphology. Other forms of alumina phases are observed in the heat-treated (HF) alloys.

  17. High-temperature creep of Nb-Al-V alloys

    SciTech Connect

    Rong, T.S.; Aindow, M.

    1999-07-01

    Nb-15Al-20V alloys with about 45% by volume of an A15 phase in a B2 matrix have been subjected to creep deformation at temperatures between 1,000 C and 1,200 C and stresses from 80 MPa to 240 MPa in vacuum. The creep curves show a rapid transition from primary to steady-state creep with a well-defined activation energy. Microstructural observations show that the creep deformation occurs mainly in the B2 matrix and is controlled by dislocation mechanisms. Samples which had been cold-rolled and annealed to reduce the size of A15 precipitates and increase the yield strength were found to have lower creep resistance than those with unrefined microstructures. The significance of these observations for the creep mechanisms is discussed.

  18. Nanotopography and Surface Stress Analysis of Ti6Al4V Bioimplant: An Alternative Design for Stability

    NASA Astrophysics Data System (ADS)

    Patel, Sweetu; Solitro, Giovanni Francesco; Sukotjo, Cortino; Takoudis, Christos; Mathew, Mathew T.; Amirouche, Farid; Shokuhfar, Tolou

    2015-11-01

    The mechanical stability of biomedical Ti6Al4V rods with vertically aligned nanotubes structure formed on their surface has yet to be fully tested during insertion into the bone. The surface of rods impacted during insertion into a bone makes shear contact with bone, generating an interfacial stress. This stress plays an important role in osseointegration and may contribute to loosening between the bone and the implant during surgery. In the current study, the mechanical stability of various Ti6Al4V surfaces, including machined (M), rough (R), machined-anodized (MA), and rough-anodized (RA) surfaces, were tested and fully analyzed during insertion and pullout test into a simulant bone with densities 15 and 20 pounds per cubic foot (pcf). Our initial results from the field emission scanning electron microscopy images taken before and after insertion reveal that titania nanotubes remained stable and maintained their structural integrity during the insertion and pullout Instron test. Furthermore, from the interfacial stress calculation during the insertion, it was observed that compared with nonanodized rods, a higher force was required to insert the anodized rods. The interfacial stress generated during the insertion of anodized rods was 1.03 ± 0.11 MPa for MA and 1.10 ± 0.36 MPa for RA, which is significantly higher ( p < 0.05) than nonanodized rods with 0.36 ± 0.07 MPa for M and 0.36 ± 0.08 MPa for R in simulant bone with density of 15 pcf. Similar behavior was also observed in 20 pcf simulant bone. Energy dissipated during anodized rod insertion (i.e., MA = 1.3 ± 0.04 Nm and RA = 1.23 ± 0.24 Nm) was not significantly different than nonanodized rod insertion (i.e., M = 0.9 ± 0.05 Nm and R = 1.04 ± 0.04 Nm) into 15 pcf simulant bone. The high stress during insertion of anodized rods suggests that the nanotubes on the surface can cause gripping and high friction on the radial side, resisting the counter motion of the bone. The latter may play a beneficial role in preventing micromotion between the bone and implant and therefore reducing the chance of fretting/fatigue corrosion.

  19. Flow stress of rapidly solidified Al-5Cr-2Zr alloy as a function of processing variables

    SciTech Connect

    Brahmi, A.; Gerique, T.; Torralba, M.; Lieblich, M.

    1997-12-01

    In a previous work, Lieblich et al. determined that room temperature hardness and tensile strength of as-extruded Al-5Cr-2Zr (wt.%) alloys obtained by gas atomization increased with decreasing powder particle size and extrusion temperature, and depended only very little on extrusion ratio and ram speed. The aim of the present study was to determine the influence of powder particle diameter and extrusion temperature on the flow stress of Al-5Cr-2Zr at temperatures ranging from 373 to 773 K. The contribution to the flow stress of different strengthening mechanisms is evaluated and related to the processing parameters.

  20. Experimental Study of the Impact Damage on AN Al2O3-COATED Glass Under Stress

    NASA Astrophysics Data System (ADS)

    Suh, Chang-Min; Kim, Sung-Ho; Suh, Duck-Young

    The impact damage of an Al2O3-coated soda-lime glass under tensile and compressive stress conditions was investigated by an impact test using a steel ball (2mm dia.). The size of the glass specimens was 40405(mm). In order to change the porosity percent of each specimen, the target distance was set at 120mm and 70mm. Also, the effect of the thickness of the coating layer was shown by two amounts (100 ?m and 50 ?m). The velocity of the steel balls was set between 30 and 60m/s. After the impact test, the crack patterns and lengths were measured using a stereo-microscope. The tensile and compressive specimens were prepared by inflation and deflation of air pressure within a pressure vessel. It was confirmed that the crack length of the glass under tensile stress was longer than that of glass under compressive stress. Also, the optimum conditions were a target distance of 70mm and 100 ?m of a coating thickness, thus resulting in a minimization of porosity percent and area.

  1. Stress controlled pulsed direct current co-sputtered Al1-xScxN as piezoelectric phase for micromechanical sensor applications

    NASA Astrophysics Data System (ADS)

    Fichtner, Simon; Reimer, Tim; Chemnitz, Steffen; Lofink, Fabian; Wagner, Bernhard

    2015-11-01

    Scandium alloyed aluminum nitride (Al1-xScxN) thin films were fabricated by reactive pulsed direct current co-sputtering of separate scandium and aluminum targets with x ? 0.37. A significant improvement of the clamped transversal piezoelectric response to strain e31,f from -1.28 C/m2 to -3.01 C/m2 was recorded, while dielectric constant and loss angle remain low. Further, the built-in stress level of Al1-xScxN was found to be tuneable by varying pressure, Ar/N2 ratio, and Sc content. The thus resulting enhancement of the expectable signal to noise ratio by a factor of 2.1 and the ability to control built-in stress make the integration of Al1-xScxN as the piezoelectric phase of micro-electro-mechanical system sensor applications highly attractive.

  2. Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress

    NASA Astrophysics Data System (ADS)

    Sun, Wei-Wei; Zheng, Xue-Feng; Fan, Shuang; Wang, Chong; Du, Ming; Zhang, Kai; Chen, Wei-Wei; Cao, Yan-Rong; Mao, Wei; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

    2015-01-01

    The degradation mechanism of enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) fabricated by fluorine plasma ion implantation technology is one major concern of HEMTs reliability. It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress. The degradation does not originate from the presence of as-grown traps in the AlGaN barrier layer or the generated traps during fluorine ion implantation process. By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions, a good agreement is observed. It provides direct experimental evidence to support the impact ionization physical model, in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the AlGaN barrier layer by electrons injected from 2DEG channel. Furthermore, our results show that there are few new traps generated in the AlGaN barrier layer during the gate overdrive stress, and the ionized fluorine ions cannot recapture the electrons. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the Opening Project of Science and Techology on Reliability Physics and Application Technology of Electronic Component Laboratory (Grant No. ZHD201206), the New Experiment Development Funds for Xidian University, China (Grant No. SY1213), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars.

  3. High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

    NASA Astrophysics Data System (ADS)

    Li, Guowang; Cao, Yu; Xing, Huili Grace; Jena, Debdeep

    2010-11-01

    We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm2/V s. The 2DEG density was tunable at 0.4-3.71013/cm2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

  4. High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

    SciTech Connect

    Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

    2010-11-29

    We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm{sup 2}/V s. The 2DEG density was tunable at 0.4-3.7x10{sup 13}/cm{sup 2} by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

  5. NiAl-base composite containing high volume fraction of AlN for advanced engines

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan (Inventor); Whittenbeger, John D. (Inventor); Lowell, Carl F. (Inventor)

    1994-01-01

    A particulate reinforced NiAl-AlN composite alloy has a NiAl matrix and greater than about 13 volume percent fine particles of AlN within the matrix. The particles preferably have a diameter from about 15 nanometers to about 50 nanometers. The particulate reinforced NiAl-AlN composite alloy may be prepared by cryomilling prealloyed NiAl in liquid nitrogen using grinding media having a diameter of from about 2 to 6 mm at an impeller speed of from about 450 RPM to about 800 RPM. The cryomilling may be done for a duration of from about 4 hours to about 20 hours to obtain a cryomilled powder. The cryomilled powder may be consolidated to form the particulate reinforced NiAl-AlN composite alloy. The particulate reinforced alloy can further include a toughening alloy. The toughening alloy may include NiCrAlY, FeCrAlY, and FeAl.

  6. Regional aspect of highly water-stressed population estimated by world water resources under SRES scenarios

    NASA Astrophysics Data System (ADS)

    Kiguchi, M.; Shen, Y.; Kanae, S.; Oki, T.

    2008-12-01

    Global and regional populations lived in highly water-stressed basin for a function of the temperature were estimated using the socio-economical data and the outputs of GCMs. In global, the highly water-stressed population in scenario A2 rapidly increased when the anomaly of temperature is exceeding to about +1.5 deg.. In the case of the scenario A1b, the gradient of increase of highly water-stressed population was less than that in the case of the scenario A2. When the value of temperature anomaly was exceeding to about + 1.5 deg., the gradient of increase of highly water-stressed population became loose. On the other hand, the highly water-stressed population in the scenario B1 decreased when the temperature anomaly was exceeding to about +1.2 deg.. According to the estimation of the highly water-stressed population when the effect of climate change was ignored (that is, runoff was not changed), the highly water-stressed population was almost same. This result implied that it is strongly contributed by not the climate change but the socio- economical factors (ex; an irrigated area, increase of industrial water use, increase of population itself). Parry et al. (2001) pointed out that the influence on the water risk by the climate change is serious when the anomaly of temperature is exceeding to +2 deg.. However, our assessment disagrees with their assignment. When the highly water-stressed population assessment is estimated within the social elements (ex., the increase of irrigation demand, industrial demand, and population itself), the climate change is not so effective. Part of this study was financially supported by the Global Environment Research Fund, "S-4" and "S-5", from the Japanese Ministry of the Environment.

  7. High temperature, oxidation resistant noble metal-Al alloy thermocouple

    NASA Technical Reports Server (NTRS)

    Smialek, James L. (inventor); Gedwill, Michael G. (inventor)

    1994-01-01

    A thermocouple is disclosed. The thermocouple is comprised of an electropositive leg formed of a noble metal-Al alloy and an electronegative leg electrically joined to form a thermocouple junction. The thermocouple provides for accurate and reproducible measurement of high temperatures (600 - 1300 C) in inert, oxidizing or reducing environments, gases, or vacuum. Furthermore, the thermocouple circumvents the need for expensive, strategic precious metals such as rhodium as a constituent component. Selective oxidation of rhodium is also thereby precluded.

  8. Simulation of distortion and residual stress in high pressure die casting - modelling and experiments

    NASA Astrophysics Data System (ADS)

    Hofer, P.; Kaschnitz, E.; Schumacher, P.

    2012-07-01

    Two individual high-pressure die-casting geometries were developed in order to study the influence of process parameters and different alloys on the distortion behaviour of castings. These geometries were a stress lattice and a V-shaped sample tending to form residual stress due to different wall thickness respectively by a deliberate massive gating system. In the experimental castings the influence of the most important process parameters such as die temperature and die opening time and the cooling regime was examined. The time evolution of process temperatures was measured using thermal imaging. The heat transfer coefficients were adapted to the observed temperature distributions. Castings were produced from the two alloys AlSi12 and AlSi10MnMg. The distortion of the castings was measured by means of a tactile measuring device. For the alloy AlSi10MnMg thermo-physical and thermo-mechanical data were obtained using differential scanning calorimetry, laser flash technique, dilatometry and tensile testing at elevated temperatures. These data were used for modelling the material behaviour of the AlSi10MnMg alloy in the numerical model while for the alloy AlSi12(Fe) literature data were used. Process and stress simulation were conducted using the commercial FEM software ANSYS Workbench. A survey on the results of the comparison between simulation and experiment is given for both alloys.

  9. Corrosion Fatigue of High-Strength Titanium Alloys Under Different Stress Gradients

    NASA Astrophysics Data System (ADS)

    Baragetti, Sergio; Villa, Francesco

    2015-05-01

    Ti-6Al-4V is the most widely used high strength-to-mass ratio titanium alloy for advanced engineering components. Its adoption in the aerospace, maritime, automotive, and biomedical sectors is encouraged when highly stressed components with severe fatigue loading are designed. The extents of its applications expose the alloy to several aggressive environments, which can compromise its brilliant mechanical characteristics, leading to potentially catastrophic failures. Ti-6Al-4V stress-corrosion cracking and corrosion-fatigue sensitivity has been known since the material testing for pressurized tanks for Apollo missions, although detailed investigations on the effects of harsh environment in terms of maximum stress reduction have been not carried out until recent times. In the current work, recent experimental results from the authors' research group are presented, quantifying the effects of aggressive environments on Ti-6Al-4V under fatigue loading in terms of maximum stress reduction. R = 0.1 axial fatigue results in laboratory air, 3.5 wt.% NaCl solution, and CH3OH methanol solution at different concentrations are obtained for mild notched specimens ( K t = 1.18) at 2e5 cycles. R = 0.1 tests are also conducted in laboratory air, inert environment, 3.5 wt.% NaCl solution for smooth, mild and sharp notched specimens, with K t ranging from 1 to 18.65, highlighting the environmental effects for the different load conditions induced by the specimen geometry.

  10. The Role of PentaCoordinated Al3+ Ions in the High Temperature Phase Transformation of ?-Al2O3

    SciTech Connect

    Kwak, Ja Hun; Hu, Jian Zhi; Lukaski, Adrienne C.; Kim, Do Heui; Szanyi, Janos; Peden, Charles HF

    2008-06-26

    In this work, the structural stability of gamma-alumina (?-Al2O3) was investigated by a combination of XRD and high resolution solid state 27Al MAS NMR at an ultra-high magnetic field of 21.1 tesla. XRD measurements show that ?-Al2O3 undergoes a phase transition to ?-Al2O3 during calcination at 1000oC for 10hr. The formation of the ?-Al2O3 phase is further confirmed by 27Al MAS NMR; additional 27Al peaks centered at 10.5 and ~78 ppm were observed in samples calcined at this high temperature. Both the XRD and NMR results indicate that, after calcination at 1000C for 10 hrs, the ratio of the ?-Al2O3 phase to the total alumina in samples modified by either BaO or La2O3 is significantly reduced in comparison with ?-Al2O3. 27Al MAS NMR spectra revealed that the reduction in the extent of ?-Al2O3 formation was highly correlated with the reduction in the amount of penta-coordinated aluminum ions, measured after 500C calcination, in both BaO- and La2O3-modified ?-Al2O3 samples. These results strongly suggest that the penta-coordinated aluminum ions, present exclusively on the surface of ?-Al2O3, play a critical role in the phase transformation of ?-Al2O3 to ?-Al2O3. The role of the modifiers, in our case BaO or La2O3, is to convert the penta-coordinated aluminum ions into octahedral ones, thereby improving the thermal stabilities of the samples. Oxide additives, on the other hand, had no beneficial effect on preventing the specific surface area reduction that occurred during high temperature (?1000C) calcination.

  11. Effects of Crystal Orientation on Stress Rupture Behavior of a Ni3Al-BASE Single Crystal Superalloy IC6SX

    NASA Astrophysics Data System (ADS)

    Jiang, Liwu; Li, Shusuo; Wu, Meiling; Han, Yafang

    The effect of the crystal orientation on the stress rupture behavior of the Ni3Al-base Single Crystal alloy IC6SX under the test condition of 1100°C/120Mpa has been studied. The results showed that the stress rupture lives of the specimens with [001], [011] and [111] crystal orientations were 205.45h, 268.6h and 485h, respectively, i.e., the specimen with [111] crystal orientation had the longest stress rupture life. The results of the tests also showed the significant different of high temperature stress rupture elongation and area reduction for different crystal orientation specimens, i.e., the ruptured elongations for the specimens with [001], [011] and [111] crystal orientations were 61.9%, 22.9% and 28.8%, and the values of area reduction for the specimens with [001], [011]and [111] crystal orientations were 11.7%, 12.2%and 7.3% respectively.

  12. High-Risk Stress Fractures: Diagnosis and Management.

    PubMed

    McInnis, Kelly C; Ramey, Lindsay N

    2016-03-01

    Stress fractures are common overuse injuries in athletes. They occur during periods of increased training without adequate rest, disrupting normal bone reparative mechanisms. There are a host of intrinsic and extrinsic factors, including biochemical and biomechanical, that put athletes at risk. In most stress fractures, the diagnosis is primarily clinical, with imaging indicated at times, and management focused on symptom-free relative rest with advancement of activity as tolerated. Overall, stress fractures in athletes have an excellent prognosis for return to sport, with little risk of complication. There is a subset of injuries that have a greater risk of fracture progression, delayed healing, and nonunion and are generally more challenging to treat with nonoperative care. Specific locations of high-risk stress fracture include the femoral neck (tension side), patella, anterior tibia, medial malleolus, talus, tarsal navicular, proximal fifth metatarsal, and great toe sesamoids. These sites share a characteristic region of high tensile load and low blood flow. High-risk stress fractures require a more aggressive approach to evaluation, with imaging often necessary, to confirm early and accurate diagnosis and initiate immediate treatment. Treatment consists of nonweight-bearing immobilization, often with a prolonged period away from sport, and a more methodic and careful reintroduction to athletic activity. These stress fractures may require surgical intervention. A high index of suspicion is essential to avoid delayed diagnosis and optimize outcomes in this subset of stress fractures. PMID:26972260

  13. Functions of FUS/TLS From DNA Repair to Stress Response: Implications for ALS

    PubMed Central

    Sama, Reddy Ranjith Kumar; Ward, Catherine L.

    2014-01-01

    Fused in sarcoma/translocated in liposarcoma (FUS/TLS or FUS) is a multifunctional DNA-/RNA-binding protein that is involved in a variety of cellular functions including transcription, protein translation, RNA splicing, and transport. FUS was initially identified as a fusion oncoprotein, and thus, the early literature focused on the role of FUS in cancer. With the recent discoveries revealing the role of FUS in neurodegenerative diseases, namely amyotrophic lateral sclerosis and frontotemporal lobar degeneration, there has been a renewed interest in elucidating the normal functions of FUS. It is not clear which, if any, endogenous functions of FUS are involved in disease pathogenesis. Here, we review what is currently known regarding the normal functions of FUS with an emphasis on DNA damage repair, RNA processing, and cellular stress response. Further, we discuss how ALS-causing mutations can potentially alter the role of FUS in these pathways, thereby contributing to disease pathogenesis. PMID:25289647

  14. Life expectancy of modular Ti6Al4V hip implants: influence of stress and environment.

    PubMed

    Chandra, A; Ryu, J J; Karra, P; Shrotriya, P; Tvergaard, V; Gaisser, M; Weik, T

    2011-11-01

    Stress dependent electrochemical dissolution is identified as one of the key mechanisms governing surface degradation in fretting and crevice corrosion of biomedical implants. The present study focuses on delineating the roles of mechanical stress and chemical conditions on the life expectancy of modular hip implants. First, material removal on a stressed surface of Ti6Al4V subjected to single asperity contact is investigated experimentally to identify the influence of contact load, in-plane stress and chemical environment on mean wear rates. A range of known stress levels are applied to the specimen while its surface is mechanically stimulated in different non-reactive to oxidizing aqueous environments. Evolution of surface degradation is monitored, and its mechanism is elucidated. This phase allows estimation of Preston Constant which is later used in the analysis. Second phase of the work is semi-analytical and computational, where, based on the estimated Preston constant and other material and process parameters, the scratch propensity (consisting of magnitude of scratch depth and their frequency per unit area) due to micro-motion in modular hip implants is estimated. The third phase views these scratches as initial notches and utilizes a mixed-mode fatigue crack propagation model to estimate the critical crack length for onset of instability. The number of loading cycles needed to reach this critical crack length is then labeled as the expected life of the implant under given mechanical and chemical conditions. Implications of different material and process conditions to life expectancy of orthopedic implants are discussed. It is observed that transverse micro-motion, compared to longitudinal micro-motion, plays a far more critical role in determining the implant life. Patient body weight, as well as proximity of the joint fluid to its iso-electric point play key roles in determining wear rates and associated life expectancies of modular hip implants. Sustained aeration of joint fluid, as well as proper tolerancing of mating surfaces, along with a proper choice of material microstructure may be utilized to extend implant life. PMID:22098898

  15. Shot-Peening Effect on High Cycling Fatigue of Al-Cu Alloy

    NASA Astrophysics Data System (ADS)

    Fouad, Yasser; Metwally, Mostafa El

    2013-12-01

    The present work was aimed at evaluating the effects of shot-peening on the high cycle fatigue performance of the age-hardening aircraft alloy Al 2024 at different almen intensities. Shot-peening to full coverage (100 pct) was performed using spherically conditioned cut wire (SCCW 14) with an average shot size of 0.36 mm and at almen intensities of 0.1, 0.2, and 0.3 mmA. After applying the various mechanical surface treatments, the changes in the surface and near-surface layer properties such as microhardness, residual stress-depth profiles, and surface roughness were determined. The microhardness, surface roughness, and the residual stresses increased proportionally with the almen intensity. Electropolitically polished conditions were used as reference in the mechanically surface treated specimens. A significant improvement was seen in the fatigue performance of the 0.1 mmA.

  16. Effect of Laser Shock Peening on surface properties and residual stress of Al6061-T6

    NASA Astrophysics Data System (ADS)

    Salimianrizi, A.; Foroozmehr, E.; Badrossamay, M.; Farrokhpour, H.

    2016-02-01

    The purpose of this study is to investigate the effects of Laser Shock Peening (LSP) on Al 6061-T6. The confined LSP regime using Nd: YAG laser with 1200 mJ of energy per pulse and 8 ns of pulse width were applied. The treated specimens were evaluated by means of surface integrity with optical microscopy, scanning electron microscope, microhardness, surface roughness and induced residual stress using an X-ray diffraction method. Results showed that by the use of LSP, compressive residual stress could effectively be induced on the surface of treated material. It was also revealed that the hardened depth of the material, up to a maximum depth of 1875 μm, could be achieved due to work hardening and grain refinement. In addition, surface roughness measurements showed that the LSP could deteriorate surface quality depending on the LSP parameters. The influences of beam overlap rates, number of laser shots and scanning pattern on microhardness as well as surface roughness are discussed.

  17. The stress and spalling behavior of the oxide scale formed on polycrystalline Ni{sub 3}Al

    SciTech Connect

    Christensen, R.J.; Lipkin, D.M.; Clarke, D.R.

    1996-09-01

    The residual stress in the oxide scale formed on polycrystalline Ni{sub 3}Al in air in the range of 900--1,200 C was determined at room temperature using optical fluorescence piezospectroscopy. The stress was found to be almost independent of time or temperature of oxidation. In contrast, the spalling behavior was strongly dependent on the oxidation temperature, not occurring below 1,100 C and profusely at 1,200 C. In the intermediate temperature regime ({approximately}1,100 C), spallation of the oxide scale occurred preferentially in the vicinity of grain boundaries in the Ni{sub 3}Al. This is attributed to a buckling instability driven by the residual thermal mismatch stress and induced by both void formation and a non-planar interface structure resulting from preferential diffusion along the Ni{sub 3}Al grain boundaries.

  18. Design of a High Field Nb3Al Common Coil Magnet

    SciTech Connect

    Xu, Qingjin; Sasaki, Kenichi; Nakamoto, Tatsushi; Terashima, Akio; Tsuchiya, Kiyosumi; Yamamoto, Akira; Kikuchi, Akihiro; Takeuchi, Takao; Sabbi, GianLuca; Caspi, Shlomo; Ferracin, Paolo; Felice, Helene; Hafalia, Ray; Zlobin, Alexander; Barzi, Emauela; Yamada, Ryuji

    2009-10-19

    A high field Nb{sub 3}Al common coil magnet is under development as an R&D of 'Advanced Superconducting Magnets for the LHC Luminosity Upgrade', in the framework of the CERN-KEK cooperation program. The goal of this research is to demonstrate the feasibility of high field magnet wound with Nb{sub 3}Al cable. The common coil approach and the shell-based structure were adopted in the design of this magnet. Besides three Nb{sub 3}Al coils, two Nb{sub 3}Sn coils were included to increase the peak field of the whole magnet. The two types of coils were designed with different straight lengths to reduce the peak field of the Nb{sub 3}Sn coils. The peak fields of the Nb{sub 3}Al and Nb{sub 3}Sn coils are 13.1 T and 11.8 T respectively. An aluminum shell together with four aluminum rods applies stress to the coils to overcome the Lorenz force during excitation. Two different support structures for the superconducting coils were introduced in this paper. The development status is also presented.

  19. High quality semipolar (11{sup }02) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities

    SciTech Connect

    Ichikawa, S. Iwata, Y.; Funato, M.; Kawakami, Y.; Nagata, S.

    2014-06-23

    Adjusting the growth conditions from those for c-plane growth realizes high-quality semipolar (11{sup }02) AlGaN/AlN quantum wells (QWs) with atomically smooth surfaces and abrupt interfaces on AlN substrates. Upon comparing the optical properties to those of c-plane QWs using time-integrated and time-resolved photoluminescence spectroscopy, the estimated internal electric field is much smaller in (11{sup }02) AlGaN/AlN QWs than in c-plane QWs. Thus, (11{sup }02) AlGaN/AlN QWs have narrower emission line widths and remarkably faster radiative recombination lifetimes, realizing highly efficient deep ultraviolet emissions.

  20. The stress-corrosion behavior of Al-Li-Cu alloys: A comparison of test methods

    NASA Technical Reports Server (NTRS)

    Rizzo, P. P.; Galvin, R. P.; Nelson, H. G.

    1982-01-01

    Two powder metallurgy processed (Al-Li-Cu) alloys with and without Mg addition were studied in aqueous 3.5% NaCl solution during the alternate immersion testing of tuning fork specimens, slow crack growth tests using fracture mechanics specimens, and the slow strain rate testing of straining electrode specimens. Scanning electron microscopy and optical metallography were used to demonstrate the character of the interaction between the Al-Li-Cu alloys and the selected environment. Both alloys are susceptible to SC in an aqueous 3.5% NaCl solution under the right electrochemical and microstructural conditions. Each test method yields important information on the character of the SC behavior. Under all conditions investigated, second phase particles strung out in rows along the extrusion direction in the alloys were rapidly attacked, and played principal role in the SC process. With time, larger pits developed from these rows of smaller pits and under certain electrochemical conditions surface cracks initiated from the larger pits and contributed directly to the fracture process. Evidence to support slow crack growth was observed in both the slow strain rate tests and the sustained immersion tests of precracked fracture mechanics specimens. The possible role of H2 in the stress corrosion cracking process is suggested.

  1. Proteomics of rice grain under high temperature stress

    PubMed Central

    Mitsui, Toshiaki; Shiraya, Takeshi; Kaneko, Kentaro; Wada, Kaede

    2013-01-01

    Recent proteomic analyses revealed dynamic changes of metabolisms during rice grain development. Interestingly, proteins involved in glycolysis, citric acid cycle, lipid metabolism, and proteolysis were accumulated at higher levels in mature grain than those of developing stages. High temperature (HT) stress in rice ripening period causes damaged (chalky) grains which have loosely packed round shape starch granules. The HT stress response on protein expression is complicated, and the molecular mechanism of the chalking of grain is obscure yet. Here, the current state on the proteomics research of rice grain grown under HT stress is briefly overviewed. PMID:23508632

  2. AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering for SAW applications

    NASA Astrophysics Data System (ADS)

    Ait Aissa, K.; Achour, A.; Elmazria, O.; Simon, Q.; Elhosni, M.; Boulet, P.; Robert, S.; Djouadi, M. A.

    2015-04-01

    In this work, aluminium nitride (AlN) films were deposited on silicon substrates buffered by an epitaxial AlN thin film for surface acoustic wave (SAW) applications. The films were deposited by dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) deposition techniques. The structural properties of AlN films were investigated using x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy and atomic force microscopy. In both cases of films deposited by dcMS and HiPIMS, the XRD results showed that the obtained films are oriented, with full width at half maximum rocking curves of around 1°. Raman spectroscopy revealed higher residual stress relaxation in the AlN epilayers grown by HiPIMS compared to AlN grown by dcMS, highlighted by a blue shift in the E2(high) Raman mode. The SAW measurements indicated an insertion loss of AlN-SAW devices of about 53 and 35 dB for the AlN films deposited by dcMS and HiPIMS respectively. The relation between the structural properties of AlN and the characteristics of AlN-SAW devices were correlated and discussed.

  3. Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Chul; Her, Jin-Cherl; Han, Sang-Myeon; Seo, Kwang-Seok; Han, Min-Koo

    2004-04-01

    The effects of electrostatic discharge (ESD) on the variation of electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs), such as on-current, leakage current of gate and transconductance (gm), have been investigated. The failure phenomena of HEMTs due to the ESD stress have also been studied. We have applied the ESD stress by transmission line pulsing (TLP) method, which is widely used in ESD stress experiments, and measured the electrical characteristics before and after applying ESD stress. The on-current after applying ESD stress was increased because the space between the drain and the gate was narrowed due to the migration of the metal caused by the high electric field and temperature under the ESD stress. The leakage current was decreased and gm was changed slightly. The failure points were located mainly in the middle and on each side of the gate. AlGaN/GaN HEMTs, in contrast with GaAs HEMTs, have been shown to easily fail due to the poor thermal characteristics of the sapphire substrate.

  4. Yield Strength of Transparent MgAl2O4 Nano-Ceramic at High Pressure and Temperature

    PubMed Central

    2010-01-01

    We report here experimental results of yield strength and stress relaxation measurements of transparent MgAl2O4 nano-ceramics at high pressure and temperature. During compression at ambient temperature, the differential strain deduced from peak broadening increased significantly with pressure up to 2 GPa, with no clear indication of strain saturation. However, by then, warming the sample above 400C under 4 GPa, stress relaxation was obviously observed, and all subsequent plastic deformation cycles are characterized again by peak broadening. Our results reveal a remarkable reduction in yield strength as the sintering temperature increases from 400 to 900C. The low temperature for the onset of stress relaxation has attracted attention regarding the performance of transparent MgAl2O4 nano-ceramics as an engineering material. PMID:20676198

  5. Relationship between copper concentration and stress during electromigration in an Al(0.25 at.?% Cu) conductor line

    NASA Astrophysics Data System (ADS)

    Kao, H.-K.; Cargill, G. S.; Giuliani, F.; Hu, C.-K.

    2003-03-01

    Synchrotron-based x-ray microbeam fluorescence and diffraction have been used for in situ measurements of Cu concentration and biaxial stress in a 200-?m-long, 10-?m-wide Al(0.25 at. % Cu) conductor line with 1.5-?m-thick SiO2 passivation during electromigration. Measurements over 48 h with T=300 C and j=1.5105 A/cm2 show that a stress gradient of 3 MPa/?m develops over the upstream 130 ?m of line length where Cu concentration drops below 0.15 at. %, and a 10-?m-long void develops at the cathode end of the line, but little change in stress occurs over the downstream 70 ?m of line length where Cu concentration remains above 0.15 at. %. These experimental results have been reproduced by a finite element model in which the downstream Cu transport is accompanied by a counter flow of Al in the upstream direction, and downstream Al motion is blocked where the local Cu concentration is above 0.15 at. %. Defect mediated coupling between Al and Cu diffusive flows, e.g., Cu-vacancy binding, is proposed as the cause for the counterflow of Al when the Cu concentration is above the critical concentration, and as the mechanism by which Cu reduces the rate of electromigration damage in Al(Cu) conductor lines.

  6. Effect of Stress Ratio on the Fatigue Behavior of a Friction Stir Processed Cast Al-Si-Mg Alloy

    SciTech Connect

    Jana, Saumyadeep; Mishra, Rajiv S.; Baumann, John B.; Grant, Glenn J.

    2009-11-01

    The effect of friction stir processing (FSP) on the fatigue life of a cast Al-7Si-0.6Mg alloy at a stress ratio of R=0 was evaluated. Two types of specimen geometry were used for the FSPed condition, through-thickness processed and partial thickness processed. FSP enhanced the fatigue life by a factor of 15 for the through thickness processed samples at lower stress amplitudes. This is different from the FSP specimens tested at R=-1 and similar stress amplitudes where a 5 times improvement in fatigue life was observed. In light of these observations, various closure mechanisms were examined.

  7. High-resolution electron microscopy study of tunnelling junctions with AlN and AlON barriers

    NASA Astrophysics Data System (ADS)

    Shang, Ping; Petford-Long, Amanda K.; Nickel, Janice H.; Sharma, Manish; Anthony, Thomas C.

    2001-06-01

    Spin-dependent tunnel junctions with AlON and AlN barriers have been investigated using high-resolution electron microscopy. Plasma gas composition, nitridation time, and deposited Al thickness were studied independently. Plasma-nitrided Al produces thinner tunnel barriers than those obtained with an oxygen or oxygen+nitrogen plasma, for the same plasma exposure time. Experiments to study an increase in plasma nitridation time for a constant Al deposition thickness showed that overexposure to the plasma resulted in a thinner barrierpossibly due to the competing processes of nitride formation and slight etching of the barrier. The AlN barrier thickness increases monotonically with deposited Al thickness for a constant nitridation time. Electron energy loss spectroscopy compositional mapping has confirmed that nitrogen is present in the barrier layer. The roughness between the barrier layer and the two ferromagnetic layers has also been estimated.

  8. High-resolution electron microscopy of dislocation cores in NiAl

    SciTech Connect

    Stoeckle, D.; Sigle, W.; Seeger, A.

    1999-07-01

    The atomic structure of dislocation cores in NiAl is studied by high-resolution transmission electron microscopy (HRTEM) and molecular dynamics (MD) calculations. Results are presented on dislocations with Burgers vectors b = a{lt}100{gt} and a{lt}111{gt}. A comparison of HRTEM image simulations indicates that the core of a 45{degree} a{lt}100{gt} dislocation consists of Al atoms. The Burgers vector distribution shows a width of 2.2b. This corresponds very closely to MD results and is consistent with the relatively low Peierls stress of this dislocation. By detailed image analysis the angular dependence of the shear stress components of the dislocation are made visible. MD results obtained from 45{degree} dislocations with opposite screw components suggest, that the helicity of the screw component might be discernible from high-resolution electron micrographs. A a{lt}111{gt} dislocation with {l{underscore}angle}110{r{underscore}angle} line direction is shown which exhibits a rather wide dissociation, probably into two a/2{lt}111{gt} partials.

  9. High voltage bushing having weathershed and surrounding stress relief collar

    DOEpatents

    Cookson, Alan H. (Pittsburgh, PA)

    1981-01-01

    A high voltage electric bushing comprises a hollow elongated dielectric weathershed which encloses a high voltage conductor. A collar formed of high voltage dielectric material is positioned over the weathershed and is bonded thereto by an interface material which precludes moisture-like contaminants from entering between the bonded portions. The collar is substantially thicker than the adjacent weathershed which it surrounds, providing relief of the electric stresses which would otherwise appear on the outer surface of the weathershed. The collar may include a conductive ring or capacitive foil to further relieve electric stresses experienced by the bushing.

  10. Uncertainties in obtaining high reliability from stress-strength models

    NASA Technical Reports Server (NTRS)

    Neal, Donald M.; Matthews, William T.; Vangel, Mark G.

    1992-01-01

    There has been a recent interest in determining high statistical reliability in risk assessment of aircraft components. The potential consequences are identified of incorrectly assuming a particular statistical distribution for stress or strength data used in obtaining the high reliability values. The computation of the reliability is defined as the probability of the strength being greater than the stress over the range of stress values. This method is often referred to as the stress-strength model. A sensitivity analysis was performed involving a comparison of reliability results in order to evaluate the effects of assuming specific statistical distributions. Both known population distributions, and those that differed slightly from the known, were considered. Results showed substantial differences in reliability estimates even for almost nondetectable differences in the assumed distributions. These differences represent a potential problem in using the stress-strength model for high reliability computations, since in practice it is impossible to ever know the exact (population) distribution. An alternative reliability computation procedure is examined involving determination of a lower bound on the reliability values using extreme value distributions. This procedure reduces the possibility of obtaining nonconservative reliability estimates. Results indicated the method can provide conservative bounds when computing high reliability. An alternative reliability computation procedure is examined involving determination of a lower bound on the reliability values using extreme value distributions. This procedure reduces the possibility of obtaining nonconservative reliability estimates. Results indicated the method can provide conservative bounds when computing high reliability.

  11. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect

    Liu, L.; Xi, Y. Y.; Ren, F.; Pearton, S. J.; Laboutin, O.; Cao, Yu; Johnson, Wayne J.; Kravchenko, Ivan I

    2012-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  12. NiAl alloys for high-temperature structural applications

    NASA Astrophysics Data System (ADS)

    Darolia, Ram

    1991-03-01

    If their properties can be improved, nickel aluminide alloys offer significant payoffs in gas turbine engine applications. For these materials, excellent progress has been made toward understanding their mechanical behavior as well as improving their low-temperature ductility and high-temperature strength. For example, recent work shows that room-temperature ductility can be improved dramatically by microalloying with iron, gallium or molybdenum. The next challenge is to develop an alloy which has the required balance of ductility, toughness and strength. Development of design and test methodologies for components made out of low-ductility, anisotropic materials will also be required. While significant challenges remain, the continuing developments suggest that the prognosis for using NiAl alloys as high-temperature structural materials is good.

  13. Effects of Cd and Al stress on secondary metabolites, antioxidant and antibacterial activity of Hypoxis hemerocallidea Fisch. & C.A. Mey.

    PubMed

    Okem, Ambrose; Stirk, Wendy A; Street, Rene A; Southway, Colin; Finnie, Jeffrey F; Van Staden, Johannes

    2015-12-01

    This study investigated the effects of cadmium (Cd) and aluminium (Al) on the accumulation of phenolics, flavonoids and the bioactive compound hypoxoside in Hypoxis hemerocallidea. In addition, antioxidant scavenging and antibacterial activity were assessed to evaluate if Cd and Al stress affect the accumulation of bioactive compounds in H.hemerocallidea. Invitro grown plantlets of H.hemerocallidea were acclimatized for seven months in a greenhouse. Thereafter plants were exposed to various concentrations of Cd and Al both singularly and in combination in the form of Cd(NO3)2 (2, 5, 10mg Cd/L); Al3(NO3)3 (500, 1000, 1500mg Al/L) and combinations of Cd and Al (Cd 2:Al 500, Cd 5:Al 1000 and Cd 10:Al 1500mg/L) for a further six weeks. The highest amounts of Cd and Al translocated to the shoot were 34 and 1608mg/L respectively. Phytochemical screening showed significantly high amounts of total phenolics and flavonoids at the moderate Cd treatment (5mg/L) compared to the controls. Exposure to Cd and Al significantly decreased the accumulation of hypoxoside. There was a significant increase in diphenylpicrylhydrazyl (DPPH) antioxidant scavenging activity in most of the metal-treated plants compared to the positive control ascorbic acid. Extracts from Cd 2mg/L treatment exhibited moderate antibacterial activity against Staphylococcus aureus compared to the control. The results of the present study revealed that cultivating H.hemerocallidea on metal contaminated soils affects the accumulation of the bioactive compound, hypoxoside. PMID:26473664

  14. Cryogenic Treatment of Al-Li Alloys for Improved Weldability, Repairability, and Reduction of Residual Stresses

    NASA Technical Reports Server (NTRS)

    Malone, Tina W.; Graham, Benny F.; Gentz, Steven J. (Technical Monitor)

    2001-01-01

    Service performance has shown that cryogenic treatment of some metals provides improved strength, fatigue life, and wear resistance to the processed material. Effects such as these were initially discovered by NASA engineers while evaluating spacecraft that had returned from the cold vacuum of space. Factors such as high cost, poor repairability, and poor machinability are currently prohibitive for wide range use of some aerospace aluminum alloys. Application of a cryogenic treatment process to these alloys is expected provide improvements in weldability and weld properties coupled with a reduction in repairs resulting in a significant reduction in the cost to manufacture and life cycle cost of aerospace hardware. The primary purpose of this effort was to evaluate the effects of deep cryogenic treatment of some aluminum alloy plate products, welds, and weld repairs, and optimize a process for the treatment of these materials. The optimized process is being evaluated for improvements in properties of plate and welds, improvements in weldability and repairability of treated materials, and as an alternative technique for the reduction of residual stresses in repaired welds. This paper will present the results of testing and evaluation conducted in this effort. These results will include assessments of changes in strength, toughness, stress corrosion susceptability, weldability, repairability, and reduction in residual stresses of repaired welds.

  15. The stress relaxation of cement clinkers under high temperature

    NASA Astrophysics Data System (ADS)

    Wang, Xiufang; Bao, Yiwang; Liu, Xiaogen; Qiu, Yan

    2015-12-01

    The energy consumption of crushing is directly affected by the mechanical properties of cement materials. This research provides a theoretical proof for the mechanism of the stress relaxation of cement clinkers under high temperature. Compression stress relaxation under various high temperatures is discussed using a specially developed load cell, which can measure stress and displacement under high temperatures inside an autoclave. The cell shows that stress relaxation dramatically increases and that the remaining stress rapidly decreases with an increase in temperature. Mechanical experiments are conducted under various temperatures during the cooling process to study the changes in the grinding resistance of the cement clinker with temperature. The effects of high temperature on the load-displacement curve, compressive strength, and elastic modulus of cement clinkers are systematically studied. Results show that the hardening phenomenon of the clinker becomes apparent with a decrease in temperature and that post-peak behaviors manifest characteristics of the transformation from plasticity to brittleness. The elastic modulus and compressive strength of cement clinkers increase with a decrease in temperature. The elastic modulus increases greatly when the temperature is lower than 1000 C. The compressive strength of clinkers increases by 73.4% when the temperature drops from 1100 to 800 C.

  16. The stress relaxation of cement clinkers under high temperature

    NASA Astrophysics Data System (ADS)

    Wang, Xiufang; Bao, Yiwang; Liu, Xiaogen; Qiu, Yan

    2015-10-01

    The energy consumption of crushing is directly affected by the mechanical properties of cement materials. This research provides a theoretical proof for the mechanism of the stress relaxation of cement clinkers under high temperature. Compression stress relaxation under various high temperatures is discussed using a specially developed load cell, which can measure stress and displacement under high temperatures inside an autoclave. The cell shows that stress relaxation dramatically increases and that the remaining stress rapidly decreases with an increase in temperature. Mechanical experiments are conducted under various temperatures during the cooling process to study the changes in the grinding resistance of the cement clinker with temperature. The effects of high temperature on the load-displacement curve, compressive strength, and elastic modulus of cement clinkers are systematically studied. Results show that the hardening phenomenon of the clinker becomes apparent with a decrease in temperature and that post-peak behaviors manifest characteristics of the transformation from plasticity to brittleness. The elastic modulus and compressive strength of cement clinkers increase with a decrease in temperature. The elastic modulus increases greatly when the temperature is lower than 1000 C. The compressive strength of clinkers increases by 73.4% when the temperature drops from 1100 to 800 C.

  17. Identification of a high-risk anterior tibial stress fracture.

    PubMed

    Thelen, Mark D

    2010-12-01

    The patient was a deployed 34-year-old female soldier with a chief complaint of bilateral anterior shin pain for the past 8 weeks. Due to concern for a stress fracture, radiographic views of the bilateral tibia and fibula were completed, which revealed cortical thickening through the anterior midtibial regions bilaterally, consistent with stress reactive changes. Furthermore, a transverse lucency through the anterior cortex of the anterior right midtibial region was noted, which was consistent with a stress fracture. The patient was immediately placed in a short leg cast and was given strict non-weight-bearing instructions for gait. She was subsequently evacuated to her home duty station for consultation with an orthopaedic surgeon to determine if surgical intervention was warranted. This report illustrates the importance of identifying stress fractures considered to be high risk. PMID:21169720

  18. Anodizing of High Electrically Stressed Components

    SciTech Connect

    Flores, P.; Henderson, D. J.; Good, D. E.; Hogge, K.; Mitton, C. V.; Molina, I.; Naffziger, C.; Codova, S. R.; Ormond, E. U.

    2013-06-01

    Anodizing creates an aluminum oxide coating that penetrates into the surface as well as builds above the surface of aluminum creating a very hard ceramic-type coating with good dielectric properties. Over time and use, the electrical carrying components (or spools in this case) experience electrical breakdown, yielding undesirable x-ray dosages or failure. The spool is located in the high vacuum region of a rod pinch diode section of an x-ray producing machine. Machine operators have recorded decreases in x-ray dosages over numerous shots using the reusable spool component, and re-anodizing the interior surface of the spool does not provide the expected improvement. A machine operation subject matter expert coated the anodized surface with diffusion pump oil to eliminate electrical breakdown as a temporary fix. It is known that an anodized surface is very porous, and it is because of this porosity that the surface may trap air that becomes a catalyst for electrical breakdown. In this paper we present a solution of mitigating electrical breakdown by oiling. We will also present results of surface anodizing improvements achieved by surface finish preparation and surface sealing. We conclude that oiling the anodized surface and using anodized hot dip sealing processes will have similar results.

  19. Ultrafast Bulk Diffusion of AlHxin High-Entropy Dehydrogenation Intermediates of NaAlH4

    SciTech Connect

    Zhang, Feng; Wood, Brandon C; Wang, Yan; Wang, Cai-Zhuang; Ho, Kai-Ming; Chou, Mei-Yin

    2014-08-14

    Using first-principles molecular dynamics (FPMD) and total-energy calculations, we demonstrate low-barrier bulk diffusion of Al-bearing species in γ-NaAlH4, a recently proposed high-entropy polymorph of NaAlH4. For charged AlH4– and neutral AlH3 vacancies, the computed barriers for diffusion are <0.1 eV, and we directly observe the predicted diffusive pathways in FPMD simulations at picosecond time scales. In contrast, such diffusion in the α phase is inaccessible to FPMD, consistent with much higher barriers. The transport behavior of γ-NaAlH4, in addition to key dynamical and structural signatures, is consistent with experimental observations of high-mobility species, strongly supporting the idea that an intermediate transition from the α phase to a high-entropy polymorph facilitates the hydrogen-releasing decomposition of NaAlH4. Our results provide an answer to longstanding questions regarding the responsible agent for the experimentally observed efficient Al transport during dehydrogenation and suggest that mass transport and phase transformation kinetics are coupled. Implications for understanding the (de)hydrogenation of undoped and catalyzed NaAlH4 are discussed.

  20. Alterations in stress granule dynamics driven by TDP-43 and FUS: a link to pathological inclusions in ALS?

    PubMed Central

    Aulas, Anaïs; Vande Velde, Christine

    2015-01-01

    Stress granules (SGs) are RNA-containing cytoplasmic foci formed in response to stress exposure. Since their discovery in 1999, over 120 proteins have been described to be localized to these structures (in 154 publications). Most of these components are RNA binding proteins (RBPs) or are involved in RNA metabolism and translation. SGs have been linked to several pathologies including inflammatory diseases, cancer, viral infection, and neurodegenerative diseases such as amyotrophic lateral sclerosis (ALS) and frontotemporal dementia (FTD). In ALS and FTD, the majority of cases have no known etiology and exposure to external stress is frequently proposed as a contributor to either disease initiation or the rate of disease progression. Of note, both ALS and FTD are characterized by pathological inclusions, where some well-known SG markers localize with the ALS related proteins TDP-43 and FUS. We propose that TDP-43 and FUS serve as an interface between genetic susceptibility and environmental stress exposure in disease pathogenesis. Here, we will discuss the role of TDP-43 and FUS in SG dynamics and how disease-linked mutations affect this process. PMID:26557057

  1. Nanocrystalline Ni-Al ferrites for high frequency applications

    NASA Astrophysics Data System (ADS)

    Ramesh, T.; Bharadwaj, S.; Shinde, R. S.; Murthy, S. R.

    2013-02-01

    Nanocrystalline Ni0.94Co0.03Mn0.04Cu0.03Fe1.96-xAlxO4(x = 0,0.1,0.3,0.5,0.7and0.9) were synthesized using microwave hydrothermal method at 160°C/40 min. The synthesized powders were characterized using XRD, TEM and FTIR. The nanopowders were sintered using microwave sintering method at 950°C/30 min. The prepared samples were characterized using XRD and SEM. The substitution of Al3+ ions in place of Fe3+ ions results decrease of the density and lattice constant. The increase in D.C resistivity and reduction in the initial permeability, Ms and TC has been observed with an increase of Al3+ ions. High D.C resistivity, thereby decrease in the dielectric losses and an excellent temperature stability of Magnetization (4πMs) are desired characteristics of ferrites used for fabrication of microwave devices.

  2. 222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template

    NASA Astrophysics Data System (ADS)

    Hirayama, Hideki; Noguchi, Norimichi; Fujikawa, Sachie; Norimatsu, Jun; Kamata, Norihiko; Takano, Takayoshi; Tsubaki, Kenji

    2009-02-01

    We demonstrate 222-282 nm AlGaN and InAlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN template. Low TDD AlN templates were realized by using ammonia (NH3) pulse-flow multilayer (ML) growth technique. The edge- and screw-type dislocation densities of AlN layer were reduced to 7.5108 and 3.8107, respectively. We obtained significant increase of an AlGaN quantum well (QW) emission (by more than 50 times) by fabricating them on a low TDD ML-AlN template. We fabricated AlGaN multi (M)QW DUV-LEDs with emission range of 222-273 nm on ML-AlN templates. Single-peaked electroluminescence (EL) was obtained for AlGaN DUV-LEDs. We obtained the maximum output power of 1.1, 2.4 and 3.3 mW for the AlGaN LEDs with wavelengths of 241, 253 and 273 nm, respectively, under RT CW operation. The maximum output power of 227 and 222 nm AlGaN-QW were 0.15mW and 0.014mW, respectively, under RT pulsed operation. The maximum external quantum efficiency (EQE) of the 227 and 250 nm AlGaN LEDs were 0.2% and 0.43 %, respectively. We also fabricated 280 nm-band quaternary InAlGaN-MQW DUV-LEDs with p-type InAlGaN layers on low TDD ML-AlN templates. We obtained significant increase of photoluminescence (PL) intensity by introducing Si-doped InAlGaN buffer and barrier layers and undoped InAlGaN interlayer. We then demonstrated high internal quantum efficiency (IQE) of 284 nm InAlGaN-QW emission, which was confirmed by the fact that the ratio of the integrated intensity of the RT-PL against the 77K-PL was 86%. The maximum output power and EQE of the 282 nm InAlGaN LED were 10.6 mW and 1.2%, respectively, under RT CW operation.

  3. Flow Stress-Strain Rate Behavior of Ti-3Al-2.5V Alloy at Low Temperatures in the Superplastic Range

    NASA Astrophysics Data System (ADS)

    Salam, A.

    2012-02-01

    Flow stress-strain rate behavior of Ti-3Al-2.5V, an ? + ? titanium alloy was studied at 750 and 800 C by using the method of crosshead speed cycling. The alloy was found to exhibit superplasticity at these temperatures on the basis of complete flow stress, strain rate and strain rate sensitivity data. Strain-induced softening was observed in the alloy to a small extent at 750 C and was thought to be related to the grain refinement occurring in both ?- and ?-phases during the initial stages of deformation. However, at 800 C the effect was seen only under increasing strain-rate conditions. Flow stress versus strain rate curves generally exhibited only region II which corresponded to low- and intermediate-strain rates and region III corresponding to high-strain rates.

  4. Precipitation strengthening, yield stress anomaly and strain rate sensitivity of an L1{sub 2}-ordered intermetallic (Ni, Co){sub 3}(Al, Ti) alloy

    SciTech Connect

    Liu, W.; Krol, T.; Nembach, E.

    1998-10-13

    The L1{sub 2}-type long-range ordered {gamma}{prime} intermetallic alloys Ni{sub 3}Al, Ni{sub 3}Si and Co{sub 3}Ti have attracted much attention because of their potential as high temperature structural materials. However, such intermetallics suffer from low-temperature brittleness and inadequate high-temperature creep resistance. Recently, efforts have been made to introduce a ductile second phase into the {gamma}{prime} intermetallic alloys, in order to improve their strength, ductility and creep resistance. For this purpose, the new family of quaternary L1{sub 2}-ordered intermetallic alloys (Ni,CO){sub 3} (Al,Ti), (Ni,Co){sub 3} (Si,Ti) and Ni{sub 3}(Al,Si,Ti) has been developed, in which homogeneously distributed, coherent precipitates of the disordered f.c.c. {gamma} phase can be obtained by suitable aging treatments. Precipitation strengthening of {gamma}{prime} intermetallics by the disordered {gamma} phase has been studied on the basis of the interaction of superdislocations with {gamma} precipitates. The objective of the present work was to study the mechanical properties of an L1{sub 2}- ordered intermetallic (Ni,Co){sub 3} (Al,Ti) alloy. Emphasis is placed on the observation of the precipitation process and age hardening as well as on the measurements of the temperature dependence and strain rate sensitivity of the yield stress and flow stress.

  5. Stress Concentration and Fracture at Inter-variant Boundaries in an Al-Li Alloy

    NASA Technical Reports Server (NTRS)

    Crooks, Roy; Tayon, Wes; Domack, Marcia; Wagner, John; Beaudoin, Armand

    2009-01-01

    Delamination fracture has limited the use of lightweight Al-Li alloys. Studies of secondary, delamination cracks in alloy 2090, L-T fracture toughness samples showed grain boundary failure between variants of the brass texture component. Although the adjacent texture variants, designated B(sub s1) and B(sub s2), behave similarly during rolling, their plastic responses to mechanical tests can be quite different. EBSD data from through-thickness scans were used to generate Taylor factor maps. When a combined boundary normal and shear tensor was used in the calculation, the delaminating grains showed the greatest Taylor Factor differences of any grain pairs. Kernel Average Misorientation (KAM) maps also showed damage accumulation on one side of the interface. Both of these are consistent with poor slip accommodation from a crystallographically softer grain to a harder one. Transmission electron microscopy was used to confirm the EBSD observations and to show the role of slip bands in the development of large, interfacial stress concentrations. A viewgraph presentation accompanies the provided abstract.

  6. Quantitative prediction of twinning stress in fcc alloys: Application to Cu-Al

    NASA Astrophysics Data System (ADS)

    Kibey, Sandeep A.; Wang, L. L.; Liu, J. B.; Johnson, H. T.; Sehitoglu, H.; Johnson, D. D.

    2009-06-01

    Twinning is one of most prevalent deformation mechanisms in materials. Having established a quantitative theory to predict onset twinning stress ?crit in fcc elemental metals from their generalized planar-fault-energy (GPFE) surface, we exemplify its use in alloys where the Suzuki effect (i.e., solute energetically favors residing at and near planar faults) is operative; specifically, we apply it in Cu-xAl ( x is 0, 5, and 8.3at.% ) in comparison with experimental data. We compute the GPFE via density-functional theory, and we predict the solute dependence of the GPFE and ?crit , in agreement with measured values. We show that ?crit correlates monotonically with the unstable twin fault energies (the barriers to twin nucleation) rather than the stable intrinsic stacking-fault energies typically suggested. We correlate the twinning behavior and electronic structure with changes in solute content and proximity to the fault planes through charge-density redistribution at the fault and changes to the layer- and site-resolved density of states, where increased bonding charge correlates with decrease in fault energies and ?crit .

  7. A study on flow stress of Al-SiC composites deformed in a large range of strain

    SciTech Connect

    Liu, Y.L.

    1996-07-15

    The work-hardening behavior of aluminum metal matrix composites (Al MMCs) has been studied theoretically and experimentally. But only limited information is available about the flow stress behavior and its relationship to the evolution of the deformation microstructure during large strain deformation. The present work was therefore initiated to investigate the flow stress behavior and the microstructure of Al-SiC MMCs resulting from room-temperature deformation from small to medium and large strains. The flow stress at small strains has been determined by uniaxial tension. To determine the flow stress at medium and large strains an indirect testing method has been used. The materials were prestrained by cold rolling and subsequently tested in uniaxial tension. In this way a strain (von Mises strain) range up to 2.7 has been covered. The materials studied were aluminum containing SiC in the form of whisker (SiC{sub w}) and of particulate (SiC{sub p}). In this paper the flow stress behavior of these materials as a function of strains in a large range ({epsilon} = 0--2.7) is studied with the emphasis on the effect of medium and large strains ({epsilon} >0.2). Also the influence of shape and volume concentration of the reinforcement on the flow stress behavior is investigated.

  8. High Temperature Mechanical Behavior of Ti-45Al-8Nb and Its Cavity Evolution in Deformation

    NASA Astrophysics Data System (ADS)

    Du, Zhihao; Zhang, Kaifeng; Jiang, Shaosong; Zhu, Ruican; Li, Shuguang

    2015-10-01

    The tensile property of a high Nb containing TiAl-based alloy (Ti-45Al-8Nb) was investigated in the temperature range of 900-1050 C and strain rate range of 1 10-3 to 2.5 10-2 s-1. The results revealed that the yield stress decreased with increasing temperature and decreasing strain rate, while the tensile elongation increased with an increase in temperature and a decrease in strain rate. Hence, The minimum yield stress of 119.2 MPa and the maximum elongation of 237% were obtained at the temperature of 1050 C and strain rate of 1 10-3 s-1. Based on the experimental data, the activation energy of the alloy was calculated to be 360 kJ/mol. Moreover, the microstructure and the fracture morphology of the specimens were observed, and the results revealed that the distribution of cavities was related to deformation parameters and the fracture mode was typically dimple-type.

  9. L. V. Al'tshuler, and High Energy Density Research

    NASA Astrophysics Data System (ADS)

    Gibson, Carl H.; Krikorian, Nerses H.; Keeler, R. Norris

    2012-03-01

    Knowledge of high energy densities critical to cosmology and astrophysics was achieved and exchanged among a very few scientists at a time when science was even more constrained by political considerations that it is today. Resources for the early studies necessarily involved atomic weaponry. A history of L. V. Al'tshuler and some others in his science is given in cosmological context. In the beginning of cosmology and the Universe, negative Fortov-Planck1 pressures c7h-1G-2 of 4.6 10115 Pa are overcome by inertial-vortex anti-gravity (dark energy) pressures to achieve a turbulent big bang and the first turbulent combustion with power 1066 watts at the Kolmogorov-Planck scale 10-35 meters. The big bang event ceased when negative- pressure gluon-viscous-forces extracted 10100 kg of mass-energy from the vacuum to produce the observed fossil vorticity turbulence Universe and its inflation with power 10145 watts.

  10. Machine Learning for High-Throughput Stress Phenotyping in Plants.

    PubMed

    Singh, Arti; Ganapathysubramanian, Baskar; Singh, Asheesh Kumar; Sarkar, Soumik

    2016-02-01

    Advances in automated and high-throughput imaging technologies have resulted in a deluge of high-resolution images and sensor data of plants. However, extracting patterns and features from this large corpus of data requires the use of machine learning (ML) tools to enable data assimilation and feature identification for stress phenotyping. Four stages of the decision cycle in plant stress phenotyping and plant breeding activities where different ML approaches can be deployed are (i) identification, (ii) classification, (iii) quantification, and (iv) prediction (ICQP). We provide here a comprehensive overview and user-friendly taxonomy of ML tools to enable the plant community to correctly and easily apply the appropriate ML tools and best-practice guidelines for various biotic and abiotic stress traits. PMID:26651918

  11. TorsinA rescues ER-associated stress and locomotive defects in C. elegans models of ALS.

    PubMed

    Thompson, Michelle L; Chen, Pan; Yan, Xiaohui; Kim, Hanna; Borom, Akeem R; Roberts, Nathan B; Caldwell, Kim A; Caldwell, Guy A

    2014-02-01

    Molecular mechanisms underlying neurodegenerative diseases converge at the interface of pathways impacting cellular stress, protein homeostasis and aging. Targeting the intrinsic capacities of neuroprotective proteins to restore neuronal function and/or attenuate degeneration represents a potential means toward therapeutic intervention. The product of the human DYT1 gene, torsinA, is a member of the functionally diverse AAA+ family of proteins and exhibits robust molecular-chaperone-like activity, both in vitro and in vivo. Although mutations in DYT1 are associated with a rare form of heritable generalized dystonia, the native function of torsinA seems to be cytoprotective in maintaining the cellular threshold to endoplasmic reticulum (ER) stress. Here we explore the potential for torsinA to serve as a buffer to attenuate the cellular consequences of misfolded-protein stress as it pertains to the neurodegenerative disease amyotrophic lateral sclerosis (ALS). The selective vulnerability of motor neurons to degeneration in ALS mouse models harboring mutations in superoxide dismutase (SOD1) has been found to correlate with regional-specific ER stress in brains. Using Caenorhabditis elegans as a system to model ER stress, we generated transgenic nematodes overexpressing either wild-type or mutant human SOD1 to evaluate their relative impact on ER stress induction in vivo. These studies revealed a mutant-SOD1-specific increase in ER stress that was further exacerbated by changes in temperature, all of which was robustly attenuated by co-expression of torsinA. Moreover, through complementary behavioral analysis, torsinA was able to restore normal neuronal function in mutant G85R SOD1 animals. Furthermore, torsinA targeted mutant SOD1 for degradation via the proteasome, representing mechanistic insight on the activity that torsinA has on aggregate-prone proteins. These results expand our understanding of proteostatic mechanisms influencing neuronal dysfunction in ALS, while simultaneously highlighting the potential for torsinA as a novel target for therapeutic development. PMID:24311730

  12. The characteristics of two-phase Al-Cu and Zn-Al alloys processed by high-pressure torsion

    NASA Astrophysics Data System (ADS)

    Kawasaki, Megumi; Langdon, Terence G.

    2014-08-01

    Experiments were conducted on two different two-phase alloys, the Al-33% Cu eutectic and the Zn-22% Al eutectoid. These alloys were processed by high-pressure torsion (HPT) and then measurements were taken to determine the distributions of hardness values across the disk diameters and tensile tests were conducted to examine the potential for achieving superplastic elongations. Both alloys showed grain refinement through the HPT processing but the Al-Cu alloy exhibited a conventional work-hardening with torsional straining whereas the Zn-Al alloy exhibited a work-softening due to the loss of Zn-rich precipitates under the high imposed pressure. Excellent superplastic elongations were achieved in both alloys when pulled in tension at elevated temperatures with a maximum elongation of 1800% in the Zn-Al alloy.

  13. The Effect of Ballistic Impacts on the High Cycle Fatigue Properties of Ti-48Al-2Nb-2Cr (at.%)

    NASA Technical Reports Server (NTRS)

    Draper, S. L.; Lerch, B. A.; Pereira, J. M.; Nathal, M. V.; Austin, C. M.; Erdman, O.

    2000-01-01

    The ability of gamma - TiAl to withstand potential foreign and/or domestic object damage is a technical risk to the implementation of gamma - TiAl in low pressure turbine (LPT) blade applications. The overall purpose of the present study was to determine the influence of ballistic impact damage on the high cycle fatigue strength of gamma - TiAl simulated LPT blades. Impact and specimen variables included ballistic impact energy, projectile hardness, impact temperature, impact location, and leading edge thickness. The level of damage induced by the ballistic impacting was studied and quantified on both the impact (front) and backside of the specimens. Multiple linear regression was used to model the cracking and fatigue response as a function of the impact variables. Of the impact variables studied, impact energy had the largest influence on the response of gamma - TiAl to ballistic impacting. Backside crack length was the best predictor of remnant fatigue strength for low energy impacts (<0.74J) whereas Hertzian crack length (impact side damage) was the best predictor for higher energy impacts. The impacted gamma - TiAl samples displayed a classical mean stress dependence on the fatigue strength. For the fatigue design stresses of a 6th stage LPT blade in a GE90 engine, a Ti-48Al-2Nb-2Cr LPT blade would survive an impact of normal service conditions.

  14. The Effect of Laves Phase (Fe,Al)2Zr on the High-Temperature Strength of Carbon-Alloyed Fe3Al Aluminide

    NASA Astrophysics Data System (ADS)

    Kratochvíl, Petr; Vodičková, Věra; Král, Robert; Švec, Martin

    2015-12-01

    The effects of carbon on the phase structure and on the yield stress σ 0.2 in the temperature range from 873 K to 1073 K (600 °C to 800 °C) of the Fe3Al type aluminides alloyed by Zr are analyzed. Four alloys with Zr and C in ranging from 1.0 to 5.0 at. pct of additives were used. The appearing of either Laves phase (Fe,Al)2Zr and/or carbides depend on the difference in concentrations, c Zr - c C. This parameter (c Zr - c C) has been selected instead of the concentration ratio c Zr/c C used in previous works since it exhibits a significantly better correlation with the Laves phase concentration which influences the high-temperature yield stress, σ 0.2, of the tested alloys. The presence of Laves phase or eutectic (matrix—Laves phase), respectively, enhances the value of the yield stress σ 0.2. The amount of Laves phase is decreased by the presence of C due to the affinity of carbon to Zr.

  15. The Effect of Laves Phase (Fe,Al)2Zr on the High-Temperature Strength of Carbon-Alloyed Fe3Al Aluminide

    NASA Astrophysics Data System (ADS)

    Kratochvíl, Petr; Vodičková, Věra; Král, Robert; Švec, Martin

    2016-03-01

    The effects of carbon on the phase structure and on the yield stress σ 0.2 in the temperature range from 873 K to 1073 K (600 °C to 800 °C) of the Fe3Al type aluminides alloyed by Zr are analyzed. Four alloys with Zr and C in ranging from 1.0 to 5.0 at. pct of additives were used. The appearing of either Laves phase (Fe,Al)2Zr and/or carbides depend on the difference in concentrations, c Zr - c C. This parameter ( c Zr - c C) has been selected instead of the concentration ratio c Zr/ c C used in previous works since it exhibits a significantly better correlation with the Laves phase concentration which influences the high-temperature yield stress, σ 0.2, of the tested alloys. The presence of Laves phase or eutectic (matrix—Laves phase), respectively, enhances the value of the yield stress σ 0.2. The amount of Laves phase is decreased by the presence of C due to the affinity of carbon to Zr.

  16. Stress

    MedlinePLUS

    ... to time. Not all stress is bad. All animals have a stress response, and it can be ... natural disaster. This type of stress can cause post-traumatic stress disorder (PTSD). Different people may feel stress in different ...

  17. Stress evolution during growth of GaN (0001)/Al2O3(0001) by reactive dc magnetron sputter epitaxy

    NASA Astrophysics Data System (ADS)

    Junaid, M.; Sandstrm, P.; Palisaitis, J.; Darakchieva, V.; Hsiao, C.-L.; Persson, P. O. .; Hultman, L.; Birch, J.

    2014-04-01

    We study the real time stress evolution, by in situ curvature measurements, during magnetron sputter epitaxy of GaN (0?0?0?1) epilayers at different growth temperatures, directly on Al2O3(0?0?0?1) substrates. The epilayers are grown by sputtering from a liquid Ga target in a mixed N2/Ar discharge. For 600 C, a tensile biaxial stress evolution is observed, while for 700 C and 800 C, compressive stress evolutions are observed. Structural characterization by cross-sectional transmission electron microscopy, and atomic force microscopy, revealed that films grew at 700 C and 800 C in a layer-by-layer mode while a growth temperature of 600 C led to an island growth mode. High resolution x-ray diffraction data showed that edge and screw threading dislocation densities decreased with increasing growth temperature, with a total density of 5.5 1010 cm-2 at 800 C. The observed stress evolution and growth modes are explained by a high surface mobility during magnetron sputter epitaxy at 700-800 C. Other possible reasons for the different stress evolutions are also discussed.

  18. Creep and rupture of an ODS alloy with high stress rupture ductility. [Oxide Dispersion Strengthened

    NASA Technical Reports Server (NTRS)

    Mcalarney, M. E.; Arsons, R. M.; Howson, T. E.; Tien, J. K.; Baranow, S.

    1982-01-01

    The creep and stress rupture properties of an oxide (Y2O3) dispersion strengthened nickel-base alloy, which also is strengthened by gamma-prime precipitates, was studied at 760 and 1093 C. At both temperatures, the alloy YDNiCrAl exhibits unusually high stress rupture ductility as measured by both elongation and reduction in area. Failure was transgranular, and different modes of failure were observed including crystallographic fracture at intermediate temperatures and tearing or necking almost to a chisel point at higher temperatures. While the rupture ductility was high, the creep strength of the alloy was low relative to conventional gamma prime strengthened superalloys in the intermediate temperature range and to ODS alloys in the higher temperature range. These findings are discussed with respect to the alloy composition; the strengthening oxide phases, which are inhomogeneously dispersed; the grain morphology, which is coarse and elongated and exhibits many included grains; and the second phase inclusion particles occurring at grain boundaries and in the matrix. The creep properties, in particular the high stress dependencies and high creep activation energies measured, are discussed with respect to the resisting stress model of creep in particle strengthened alloys.

  19. Thermal oxidation of medical Ti6Al4V blasted with ceramic particles: Effects on the microstructure, residual stresses and mechanical properties.

    PubMed

    Lieblich, M; Barriuso, S; Multigner, M; Gonzlez-Doncel, G; Gonzlez-Carrasco, J L

    2016-02-01

    Roughening of Ti6Al4V by blasting with alumina or zirconia particles improves the mechanical fixation of implants by increasing the surface area available for bone/implant apposition. Additional thermal oxidation treatments of the blasted alloy have already shown to be a complementary low-cost solution to enhancing the in vitro biocompatibility and corrosion resistance of the alloy. In this work, the effects of oxidation treatment on a grit blasted Ti6Al4V biomedical alloy have been analysed in order to understand the net effect of the combined treatments on the alloy fatigue properties. Synchrotron radiation diffraction experiments have been performed to measure residual stresses before and after the treatments and microstructural and hardness changes have been determined. Although blasting of Ti6Al4V with small spherical zirconia particles increases the alloy fatigue resistance with respect to unblasted specimens, fatigue strength after oxidation decreases below the unblasted value, irrespective of the type of particle used for blasting. Moreover, at 700C the as-blasted compressive residual stresses (700MPa) are not only fully relaxed but even moderate tensile residual stresses, of about 120MPa, are found beneath the blasted surfaces. Contrary to expectations, a moderate increase in hardness occurs towards the blasted surface after oxidation treatments. This can be attributed to the fact that grit blasting modifies the crystallographic texture of the Ti6Al4V shifting it to a random texture, which affects the hardness values as shown by additional experiments on cold rolled samples. The results indicate that the oxidation treatment performed to improve biocompatibility and corrosion resistance of grit blasted Ti6Al4V should be carried out with caution since the alloy fatigue strength can be critically diminished below the value required for high load-bearing components. PMID:26458115

  20. Stresses and strains in high-pressure composite hoses

    SciTech Connect

    Nair, S.; Dollar, A.

    1997-08-01

    A simple mechanical model for a high-pressure hose made of ethylene-propylene rubber reinforced with two helical steel wires and a layer of fabric is analyzed. The model assumes perfect bonding between the different constituents and the torsional effect due to the right-handed helical wires is neglected. Both linear and nonlinear stress-strain relations are considered for the rubber which is assumed to be incompressible. Stresses and strains of the constituents are obtained for different internal pressures and geometrical parameters.

  1. Oxidation and microstructure evolution of Al-Si coated Ni3Al based single crystal superalloy with high Mo content

    NASA Astrophysics Data System (ADS)

    Tu, Xiaolu; Peng, Hui; Zheng, Lei; Qi, Wenyan; He, Jian; Guo, Hongbo; Gong, Shengkai

    2015-01-01

    A Si modified aluminide (Al-Si) coating was prepared on a Ni3Al based single crystal superalloy with high Mo content by high-activity pack cementation. Cyclic oxidation test at 1150 °C was carried out and the microstructure evolution of the coating was investigated. The results show that the oxidation resistance of the substrate was greatly increased by applying an Al-Si coating. During oxidation, outward diffusion of Mo was effectively blocked due to its high affinity with Si. Besides, a layered structure was formed as a result of the elements inter-diffusion. An obvious degradation of the Al-Si coating was observed after 100 h oxidation. Possible mechanisms related to the oxidation and elements inter-diffusion behaviours were also discussed.

  2. Characterization of AlInN/GaN structures on AlN templates for high-performance ultraviolet photodiodes

    NASA Astrophysics Data System (ADS)

    Sakai, Yusuke; Khai, Pum Chian; Ichikawa, Junki; Egawa, Takashi; Jimbo, Takashi

    2011-02-01

    The authors characterize AlInN/GaN structures on AlN templates for high-performance ultraviolet photodiodes. AlInN/GaN structures were grown with various growth parameters by metal organic chemical vapor deposition. In the case of nearly lattice-matched to GaN underlying layers, AlInN/GaN structures are found to have smooth interface. AlInN layers grown at the low pressure are confirmed to have high crystal quality from x-ray diffraction measurements and good surface morphology from atomic force microscope images. The noble AlInN-based photodiodes were fabricated. Their performances show the leakage current of 48 nA at a reverse voltage of 5 V and the cutoff wavelength around 260 nm. A cutoff-wavelength responsivity of 21.84 mA/W is obtained, corresponding to quantum efficiency of 10.6%. It may be possible to realize high-performance ultraviolet photodiodes by further optimizing AlInN/GaN structures.

  3. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Xie, Jinqiao; Mita, Seiji

    2015-04-06

    The internal quantum efficiency (IQE) of Al{sub 0.55}Ga{sub 0.45}N/AlN and Al{sub 0.55}Ga{sub 0.45}N/Al{sub 0.85}Ga{sub 0.15}N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth conditions, such as V/III ratio, on the optical quality of AlGaN based MQWs from the influence of dislocations. At a high V/III ratio, a record high IQE of ∼80% at a carrier density of 10{sup 18 }cm{sup −3} was achieved at ∼258 nm. The high IQE was correlated with the decrease of the non-radiative coefficient A and a reduction of midgap defect luminescence, all suggesting that, in addition to dislocations, point defects are another major factor that strongly influences optical quality of AlGaN MQW structures.

  4. Fatigue crack closure behavior at high stress ratios

    NASA Technical Reports Server (NTRS)

    Turner, C. Christopher; Carman, C. Davis; Hillberry, Ben M.

    1988-01-01

    Fatigue crack delay behavior at high stress ratio caused by single peak overloads was investigated in two thicknesses of 7475-T731 aluminum alloy. Closure measurements indicated no closure occurred before or throughout the overload plastic zones following the overload. This was further substantiated by comparing the specimen compliance following the overload with the compliance of a low R ratio test when the crack was fully open. Scanning electron microscope studies revealed that crack tunneling and possibly reinitiation of the crack occurred, most likely a result of crack-tip blunting. The number of delay cycles was greater for the thinner mixed mode stress state specimen than for the thicker plane strain stress state specimen, which is similar to low R ratio test results and may be due to a larger plastic zone for the mixed mode cased.

  5. Resilience in highly stressed urban children: concepts and findings.

    PubMed Central

    Cowen, E. L.; Wyman, P. A.; Work, W. C.

    1996-01-01

    The Rochester Child Resilience Project is a coordinated set of studies of the correlates and antecedents of outcomes relating to resilience among profoundly stressed urban children. The studies have been conducted over the course of the past decade. Based on child test data, parent, teacher, and self ratings of child adjustment, and in-depth individual interviews with parents and children, a cohesive picture has developed of child and family milieu variables that consistently differentiate children with resilient versus stress-affected outcomes within this highly stressed sample. Resilient children are characterized by an easy temperament and higher IQ; sound parent/child relationships; a parent's sense of efficacy; the parent's own wellness, especially mental health; and the child's perceived competence, realistic control, empathy, and social problem-solving. PMID:8982521

  6. High-G stress and orientational stress: physiologic effects of aerial maneuvering.

    PubMed

    Gillingham, K K

    1988-11-01

    G stress can readily incapacitate pilots of modern fighter aircraft and result in mishaps due to G-induced loss of consciousness (GLC). The physiologic effects of high-G stress, including decreased head-level blood pressure due to hydrostatic pressure drop and decreased cardiac output due to inadequate venous return, result in the symptoms of visual loss and GLC. The body's primary natural defenses against the effects of G stress in flight, i.e., the neural tissue energy reserve and the cardiovascular baroceptor reflexes, determine the characteristic shape of the G-time tolerance curve, which is presented. Means of raising G tolerance fall into three categories: mechanical, physiological, and educational. Mechanical means include anti-G suits and valves, assisted positive-pressure breathing (APPB) systems, and special seats in which the seatback is reclined and/or the pilot's legs are elevated. Physiological means include frequent exposure to G stress, physical conditioning (weight training and moderate aerobic conditioning), selection of pilots for high natural tolerance, and performance of a vigorous and efficient anti-G straining maneuver. Educational means include briefings on methods of enhancing tolerance, and high-G training in a centrifuge to allow the pilot to perfect his anti-G straining maneuver. An improved anti-G valve, physical conditioning, high-G awareness briefings, and centrifuge training are now being applied in efforts to prevent GLC in current fighter aircraft. Future generations of even more maneuverable aircraft will probably necessitate the use of APPB, pilot selection, and high-G seats for protection of pilots from the effect of sustained high G forces. PMID:3060092

  7. Shear Load Transfer in High and Low Stress Tendons

    PubMed Central

    Kondratko-Mittnacht, Jaclyn; Duenwald-Kuehl, Sarah; Lakes, Roderic; Vanderby, Ray

    2016-01-01

    Background Tendon is an integral part of joint movement and stability, as it functions to transmit load from muscle to bone. It has an anisotropic, fibrous hierarchical structure that is generally loaded in the direction of its fibers/fascicles. Internal load distributions are altered when joint motion rotates an insertion site or when local damage disrupts fibers/fascicles, potentially causing inter-fiber (or inter-fascicular) shear. Tendons with different microstructure (helical versus linear) may redistribute loads differently. Method of Approach This study explored how shear redistributes axial loads in rat tail tendon (low stress tendons with linear microstructure) and porcine flexor tendon (high stress with helical microstructure) by creating lacerations on opposite sides of the tendon, ranging from about 20-60% of the tendon width, to create various magnitudes of shear. Differences in fascicular orientation were quantified using polarized light microscopy. Results and Conclusions Unexpectedly, both tendon types maintained about 20% of pre-laceration stress values after overlapping cuts of 60% of tendon width (no intact fibers end to end) suggesting that shear stress transfer can contribute more to overall tendon strength and stiffness than previously reported. All structural parameters for both tendon types decreased linearly with increasing laceration depth. The tail tendon had a more rapid decline in post-laceration elastic stress and modulus parameters as well as a more linear and less tightly packed fascicular structure, suggesting that positional tendons may be less well suited to redistribute loads via a shear mechanism. PMID:25700261

  8. High-temperature mechanical properties and deformation behavior of high Nb containing TiAl alloys fabricated by spark plasma sintering

    NASA Astrophysics Data System (ADS)

    Lu, Xin; Zhao, Li-hua; Zhu, Lang-ping; Zhang, Bin; Qu, Xuan-hui

    2012-04-01

    A high Nb containing TiAl alloy was prepared from the pre-alloyed powder of Ti-45Al-8.5Nb-0.2B-0.2W-0.02Y (at%) by spark plasma sintering (SPS). Its high-temperature mechanical properties and compressive deformation behavior were investigated in a temperature range of 700 to 1050C and a strain rate range of 0.002 to 0.2 s-1. The results show that the high-temperature mechanical properties of the high Nb containing TiAl alloy are sensitive to deformation temperature and strain rate, and the sensitivity to strain rate tends to rise with the deformation temperature increasing. The hot workability of the alloy is good at temperatures higher than 900C, while fracture occurs at lower temperatures. The flow curves of the samples compressed at or above 900C exhibit obvious flow softening after the peak stress. Under the deformation condition of 900-1050C and 0.002-0.2 s-1, the interrelations of peak flow stress, strain rate, and deformation temperature follow the Arrhenius' equation modified by a hyperbolic sine function with a stress exponent of 5.99 and an apparent activation energy of 441.2 kJmol-1.

  9. Al-Li alloy AA2198's very high cycle fatigue crack initiation mechanism and its fatigue thermal effect

    NASA Astrophysics Data System (ADS)

    Xu, Luopeng; Cao, Xiaojian; Chen, Yu; Wang, Qingyuan

    2015-10-01

    AA2198 alloy is one of the third generation Al-Li alloys which have low density, high elastic modulus, high specific strength and specific stiffness. Compared With the previous two generation Al-Li alloys, the third generation alloys have much improved in alloys strength, corrosion resistance and weldable characteristic. For these advantages, the third generation Al-Li alloys are used as aircraft structures, such as C919 aviation airplane manufactured by China and Russia next generation aviation airplane--MS-21. As we know, the aircraft structures are usually subjected to more than 108 cycles fatigue life during 20-30 years of service, however, there is few reported paper about the third generation Al-Li alloys' very high cycle fatigue(VHCF) which is more than 108 cycles fatigue. The VHCF experiment of AA2198 have been carried out. The two different initiation mechanisms of fatigue fracture have been found in VHCF. The cracks can initiate from the interior of the testing material with lower stress amplitude and more than 108 cycles fatigue life, or from the surface or subsurface of material which is the dominant reason of fatigue failures. During the experiment, the infrared technology is used to monitor the VHCF thermal effect. With the increase of the stress, the temperature of sample is also rising up, increasing about 15 °C for every 10Mpa. The theoretical thermal analysis is also carried out.

  10. High field 27Al ENDOR reveals the coordination mode of Cu2+ in low Si/Al zeolites.

    PubMed

    Carl, Patrick J; Vaughan, David E W; Goldfarb, Daniella

    2006-06-01

    The siting of Cu2+ in zeolites with low exchange levels has been a subject for debate due to the lack of experimental evidence that provide directly the interaction between the Cu2+ ion and the zeolite framework. High field 27Al ENDOR provided highly resolved orientation selective ENDOR spectra from which both the 27Al hyperfine and quadrupole principal components and orientations relative to the g tensor principal axis system were determined for a dehydrated Cu2+ exchanged zeolite X with Si/Al = 1. The results show that all three Cu-Al distances in the six-member ring are equivalent, in contrast to DFT predictions using cluster models. PMID:16734459

  11. Heat treatment of high manganese type X57MnAl27-5 austenitic steel

    NASA Astrophysics Data System (ADS)

    Jab?o?ska, M.; ?miglewicz, A.; Niewielski, G.; Hetma?czyk, M.

    2011-05-01

    In the paper, the influence of heat treatment parameters on microstructure and mechanical properties of high manganese type X57MnAl27-5 austenitic steel was investigated. The as-forged bar with diameter of 15 mm were underwent a saturation process at six different temperatures. The microstructural changes of austenite and the influence of heat treatment on the mechanical properties were considered. The quantitative analysis of austenite phase of the examined steel indicated that the parameters of saturation process resulted in changes of morphology and grain size of austenite. It was revealed that treatment temperature in the range of 950 C-1100 C slightly influenced grain size, stress limit and hardness of the investigated steel. Treatment at temperature higher than 1150 C resulted in the growth of austenite grain size and the decrease of mechanical properties.

  12. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  13. Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Tapajna, M.; Hilt, O.; Bahat-Treidel, E.; Würfl, J.; Kuzmík, J.

    2015-11-01

    Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ˜105 s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due to coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.

  14. Interfacial shear stress measurement using high spatial resolution multiphase PIV

    NASA Astrophysics Data System (ADS)

    Andr, Matthieu A.; Bardet, Philippe M.

    2015-06-01

    In multiphase flows, form drag and viscous shear stress transfer momentum between phases. For numerous environmental and man-made flows, it is of primary importance to predict this transfer at a liquid-gas interface. In its general expression, interfacial shear stress involves local velocity gradients as well as surface velocity, curvature, and surface tension gradients. It is therefore a challenging quantity to measure experimentally or compute numerically. In fact, no experimental work to date has been able to directly resolve all the terms contributing to the shear stress in the case of curved and moving surfaces. In an attempt to fully resolve the interface shear stress when surface tension gradients are negligible, high-resolution particle image velocimetry (PIV) data are acquired simultaneously on both sides of a water-air interface. The flow consists of a well-conditioned uniform and homogeneous water jet discharging in quiescent air, which exhibits two-dimensional surface waves as a result of a shear layer instability below the surface. PIV provides velocity fields in both phases, while planar laser-induced fluorescence is used to track the interface and obtain its curvature. To compute the interfacial shear stress from the data, several processing schemes are proposed and compared, using liquid and/or gas phase data. Vorticity at the surface, which relates to the shear stress through the dynamic boundary condition at the surface, is also computed and provides additional strategies for estimating the shear. The various schemes are in agreement within the experimental uncertainties, validating the methodology for experimentally resolving this demanding quantity.

  15. Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

    NASA Astrophysics Data System (ADS)

    Mohan, Nagaboopathy; Singh, Manikant; Soman, Rohith; Raghavan, Srinivasan

    2015-10-01

    AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 109/cm2 and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600-1900 cm2/V s at a carrier concentration of 0.7-0.9 1013/cm2. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.

  16. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

    PubMed Central

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed. PMID:25206318

  17. High-Temperature CO2 Sorption on Hydrotalcite Having a High Mg/Al Molar Ratio.

    PubMed

    Kim, Suji; Jeon, Sang Goo; Lee, Ki Bong

    2016-03-01

    Hydrotalcites having a Mg/Al molar ratio between 3 and 30 have been synthesized as promising high-temperature CO2 sorbents. The existence of NaNO3 in the hydrotalcite structure, which originates from excess magnesium nitrate in the precursor, markedly increases CO2 sorption uptake by hydrotalcite up to the record high value of 9.27 mol kg(-1) at 240 C and 1 atm CO2. PMID:26927529

  18. Multiple stress-time profiles in a RDX/AP/Al/HTPB plastic bonded explosive

    NASA Astrophysics Data System (ADS)

    Sutherland, G. T.; Forbes, J. W.; Lemar, E. R.; Ashwell, K. D.; Baker, R. N.

    1994-07-01

    PBXN-111 samples were shocked using light-gas guns. Six experiments were instrumented with in situ manganin or ytterbium gauges. Two experiments were instrumented with a rear surface quartz gauge. A linear relationship between shock velocity and particle velocity was obtained for stresses to 42 kbar. These results are compared with those from a wedge test study. Experimental stress-time profiles suggest a low level reaction occurs behind the shock front for stresses above about 16 kbar.

  19. High PAE high reliability AlN/GaN double heterostructure

    NASA Astrophysics Data System (ADS)

    Medjdoub, F.; Zegaoui, M.; Linge, A.; Grimbert, B.; Silvestri, R.; Meneghini, M.; Meneghesso, G.; Zanoni, E.

    2015-11-01

    We report on AlN/GaN double heterostructures for high frequency applications. 600 h preliminary reliability assessment has been performed on these emerging RF devices, showing promising millimeter-wave 100 nm gate length GaN-on-Si device stability for the first time. A 150 nm AlN/GaN double heterostructure has been developed and evaluated on SiC substrate. State-of-the-art CW power-added-efficiencies (PAE) up to 40 GHz have been achieved on ultrathin barrier (6 nm) GaN devices while operating at a drain bias exceeding 30 V.

  20. AlN/single crystalline diamond piezoelectric structure as a high overtone bulk acoustic resonator

    NASA Astrophysics Data System (ADS)

    Sorokin, B. P.; Kvashnin, G. M.; Volkov, A. P.; Bormashov, V. S.; Aksenenkov, V. V.; Kuznetsov, M. S.; Gordeev, G. I.; Telichko, A. V.

    2013-03-01

    First, the Al/AlN/Al/Cr/diamond single crystal piezoelectric layered structure has been developed, and its properties have been investigated up to 8 GHz. The peculiarities associated with the influence of piezoelectric film on the Q factor of high overtones of substrate have been pointed out. High Q 104 has been found at 6-7 GHz band.

  1. High-Resolution Chromatin Dynamics during a Yeast Stress Response

    PubMed Central

    Weiner, Assaf; Hsieh, Tsung-Han S.; Appleboim, Alon; Chen, Hsiuyi V.; Rahat, Ayelet; Amit, Ido; Rando, Oliver J.; Friedman, Nir

    2015-01-01

    Summary Covalent histone modifications are highly conserved and play multiple roles in eukaryotic transcription regulation. Here, we mapped 26 histone modifications genome-wide in exponentially growing yeast and during a dramatic transcriptional reprogramming—the response to diamide stress. We extend prior studies showing that steady-state histone modification patterns reflect genomic processes, especially transcription, and display limited combinatorial complexity. Interestingly, during the stress response we document a modest increase in the combinatorial complexity of histone modification space, resulting from roughly 3% of all nucleosomes transiently populating rare histone modification states. Most of these rare histone states result from differences in the kinetics of histone modification that transiently uncouple highly correlated marks, with slow histone methylation changes often lagging behind the more rapid acetylation changes. Explicit analysis of modification dynamics uncovers ordered sequences of events in gene activation and repression. Together, our results provide a comprehensive view of chromatin dynamics during a massive transcriptional upheaval. PMID:25801168

  2. Stress versus strain relationship of high strength concrete under high lateral confinement

    SciTech Connect

    Candappa, D.P.; Setunge, S.; Sanjayan, J.G.

    1999-12-01

    A common application of high strength concrete (HSC) is in columns subjected to large compressive forces. However, a major problem is the insufficient ductility available in HSC columns. To determine the required lateral reinforcement to maintain sufficient ductility, a good understanding of the stress-strain behavior of confined concrete needs to be established. This paper describes a testing program carried out to obtain experimental data of complete (ascending and descending) stress-strain relationships between axial stress, axial strain and lateral strain for HSC. Compressive strengths of concrete tested were 100 MPa and 60 MPa. The confining pressures used were 4 MPa, 8 MPa and 12 MPa. A total of 18 stress-strain curves are presented. The experimental results obtained seem to indicate that, for high confining pressures, the lateral strain at peak stress for 100 MPa concrete was 20% less than that of the 60 MPa concrete.

  3. Effects of residual stress and texture on the high-cycle fatigue properties of light metals

    NASA Astrophysics Data System (ADS)

    Jiang, Xiuping

    2007-12-01

    High cycle fatigue tests were conducted on a commercially pure Ti, a forged Ti-6Al-4V alloy, and newly developed high strength AA2026 and AA2099 Al alloys in four-point bend. The effects of surface compressive residual stress and texture on the fatigue properties of these alloys were systematically investigated. The resistance to fatigue crack growth in an alloy was estimated using a simple model that took into account texture and grain structure. The resistance calculations were able to explain the observed behaviors of fatigue crack growth in planar slip materials. Due to strengthening in the surface by enhancement treatment, fatigue cracks were found to be initiated in the subsurface region in the short peened Ti-6Al-4V alloy and sandblasted CP Ti, in contrast to crack initiation on the surface of the untreated samples. When the shot peened Ti-6A1-4V alloy was tested between 25C and 200C, the surface compressive residual stress could only be slightly relaxed due to thermal exposure, which did not deteriorate the fatigue strength of the alloy. Similarly, no obvious redistribution of the residual stress was observed when the sandblasted Ti was annealed below 200C. With increase in the annealing temperature (300C700C), the compressive residual stresses were significantly relaxed, leading to relatively a lower fatigue strength. In AA2026 & AA2099 Al alloys, crack growth was found to be in a predominantly crystallographic mode in unrecrystallized regions, and a non-crystallographic mode in recrystallized regions. Fatigue cracks were deflected at grain boundaries usually with small twist angles in the unrecrystallized regions, but with large twist angles in the recrystallized regions. The theoretical analysis verified that a large percentage of recrystallized grains could provide strong resistance to fatigue crack growth by producing larger twist angles of crack deflection at their grain boundaries than those of most of the gains in unrecrystallized regions, and that a <111> fiber texture presented stronger resistance to fatigue crack growth than that of a typical rolling texture. These theoretical analyses provided a quantitative understanding of the effects of macro- and micro textures on the short fatigue crack initiation and propagation in f.c.c. materials. Keywords. Four-point bend fatigue, Surface enhancement treatment, Compressive residual stress, Micro- and Macro-texture effects, Fatigue crack initiation and growth

  4. Effect of Al2O3 on the Crystallization of Mold Flux for Casting High Al Steel

    NASA Astrophysics Data System (ADS)

    Zhou, Lejun; Wang, Wanlin; Zhou, Kechao

    2015-06-01

    In order to lower the weight of automotive bodies for better fuel-efficiency and occupant safety, the demand for high Al-containing advanced high strength steel, such as transformation-induced plasticity and twinning-induced plasticity steel, is increasing. However, high aluminum content in steels would tend to significantly affect the properties of mold flux during the continuous casting process. In this paper, a kinetic study of the effect of Al2O3 content on the crystallization behavior of mold flux was conducted by using the single hot thermocouple technique and the Johnson-Mehl-Avrami model combined with the Arrhenius Equation. The results suggested that Al2O3 behaves as an amphoteric oxide in the crystallization process of mold flux. The precipitated phases of mold flux change from cuspidine (Ca4Si2O7F2) into nepheline (NaAlSiO4) and CaF2, and then into gehlenite (Ca2Al2SiO7) with the increase of Al2O3 content. The kinetics study of the isothermal crystallization process indicated that the effective crystallization rate ( k) and Avrami exponent ( n) also first increased and then decreased with the increase of Al2O3 content. The values for the crystallization activation energy of mold flux with different Al2O3 contents were E R0.8A7 = 150.76 ± 17.89 kJ/mol, E R0.8A20 = 136.43 ± 6.48 kJ/mol, E R0.8A30 = 108.63 ± 12.25 kJ/mol and E R0.8A40 = 116.15 ± 8.17 kJ/mol.

  5. Critical current of a rapid-quenched Nb3Al conductor under transverse compressive and axial tensile stress

    NASA Astrophysics Data System (ADS)

    Seeber, B.; Ferreira, A.; Mondonico, G.; Buta, F.; Senatore, C.; Flkiger, R.; Takeuchi, T.

    2011-03-01

    The electromechanical behavior of a Nb3Al wire manufactured according to the RHQT process (rapid-heating, quenching and transformation) has been investigated at magnetic fields between 15 and 19 T at 4.2 K. Of particular interest was the critical current, Ic, as a function of transverse pressure up to 300 MPa and as a function of axial tensile stress. The studied wires are pieces of a 870 m long copper stabilized Nb3Al wire with a rectangular cross section of 1.81 mm 0.80 mm. It was observed that the critical current at 300 MPa transverse pressure, applied to the narrow side, is reduced to 93%, 90% and 88% of its stress free value at 15 T, 17 T and 19 T, respectively. After unloading from 300 MPa Ic recovers to 94% and 97% at 19 T and 15 T, respectively. A field dependence of the effect is visible above 200 MPa. For completeness, the critical current was also measured under axial tensile strain. The maximum of Ic is at 0.15% applied strain and irreversibility has been observed above 0.26%. Finally a stress versus strain measurement at 4.2 K has been carried out allowing the conversion from axial strain to stress.

  6. High temperature battery cell comprising stress free hollow fiber bundle

    SciTech Connect

    Anand, J. N.; Revak, T. T.; Rossini, F. J.

    1985-04-16

    Thermal stressing of hollow fibers constituting the electrolyte-separator in a high temperature battery cell, and of certain other elements thereof, is avoided by suspending the assembly comprising the anolyte tank, the tube-sheet, the hollow fibers and a cathodic current collector-distributor within the casing and employing a limp connection between the collector-distributor and the cathode terminal of the cell.

  7. The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

    SciTech Connect

    Liao, W. C.; Chen, Y. L.; Chen, C. H.; Chyi, J. I.; Hsin, Y. M.

    2014-01-20

    A measurement methodology involving the synchronous switching of gate to source voltage and drain to source voltage (V{sub DS}) was proposed for determining the shift of threshold voltage after an AlGaN/GaN heterostructure transistor endures high V{sub DS} off-state stress. The measurement results indicated slow electron detrapping behavior. The trap level was determined as (E{sub C} – 0.6 eV). Simulation tool was used to analyze the measurement results. The simulation results were consistent with the experimental results; and a relationship between the buffer trap and threshold voltage shift over time was observed.

  8. Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering

    SciTech Connect

    Sah, R. E.; Kirste, L.; Baeumler, M.; Hiesinger, P.; Cimalla, V.; Lebedev, V.; Baumann, H.; Zschau, H.-E.

    2010-05-15

    The authors report on the stability of mechanical stress with aging and thermal cycling for columnar structured stoichiometric and homogeneous aluminum nitride thin films grown using radio frequency magnetron sputtering technique. The set of deposition parameters were optimized for the best possible orientation of crystallites in the c axis of compositionally stoichiometric films. The as-grown stress in the slightly nitrogen-rich film does not change when exposed to the atmosphere following deposition, while that in the nitrogen-deficient film, it changes due to oxidation. Additionally, the magnitude of as-grown stress has been found to depend on the substrate material in addition to the deposition parameters. The stress in the film grown on a Si(001) substrate was more tensile than in the film grown on a semi-insulating (si) GaAs(001) substrate for a given set of deposition parameters. Furthermore, the stress in the film grown on Si decreased with temperature, while that on si GaAs increased, indicating the thermally induced stress component to be the major component in the residual stress. Upon subsequent cooling the stress changes in both substrates followed the same path as of heating, thus exhibiting no hysteresis with thermal cycles between room temperature and 400 deg. C.

  9. Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

    NASA Astrophysics Data System (ADS)

    Tlek, Remziye; Ilgaz, Aykut; Gkden, Sibel; Teke, Ali; ztrk, Mustafa K.; Kasap, Mehmet; zelik, Sleyman; Arslan, Engin; zbay, Ekmel

    2009-01-01

    The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. The room temperature electron mobility was measured as 1700 cm2/V s along with 8.441012 cm-2 electron density, which resulted in a two-dimensional sheet resistance of 435 ?/? for the Al0.2Ga0.8N/AlN/GaN heterostructure. The sample designed with an Al0.88In0.12N barrier exhibited very high sheet electron density of 4.231013 cm-2 with a corresponding electron mobility of 812 cm2/V s at room temperature. A record two-dimensional sheet resistance of 182 ?/? was obtained in the respective sample. In order to understand the observed transport properties, various scattering mechanisms such as acoustic and optical phonons, interface roughness, and alloy disordering were included in the theoretical model that was applied to the temperature dependent mobility data. It was found that the interface roughness scattering in turn reduces the room temperature mobility of the Al0.88In0.12N/AlN/GaN heterostructure. The observed high 2DEG density was attributed to the larger polarization fields that exist in the sample with an Al0.88In0.12N barrier layer. From these analyses, it can be argued that the AlInN/AlN/GaN high electron mobility transistors (HEMTs), after further optimization of the growth and design parameters, could show better transistor performance compared to AlGaN/AlN/GaN based HEMTs.

  10. Quaternary InAlGaN-based deep-UV LED with high-Al-content p-type AlGaN

    NASA Astrophysics Data System (ADS)

    Hirayama, Hideki; Aoyagi, Yoshinobu

    2004-07-01

    For the realization of 250-350 nm band deep ultraviolet (UV) emitters using group III-nitride materials, it is required to obtain high-efficiency UV emission and hole conductivity for wide-bandgap (In)AlGaN. For achieving high-efficiency deep UV emission, it is quite effective to use In segregation effect which has been already used for InGaN blue emitting devices. We have demonstrated high-efficiency UV emission by introducing several percent of In into AlGaN in the wavelength range of 300-360 nm at room temperature with an In segregation effect. The emission fluctuation in the submicron region due to In segregation was clearly observed for the quaternary InAlGaN epitaxial layers. An internal quantum efficiency as high as 15% was estimated from quaternary InAlGaN based single quantum well (SQW) at around 350 nm at room temperature. Such a high efficiency UV emission can be obtained even on high threading dislocation density buffers. Also, hole conductivity was obtained for high Al content (>53%) Mg-doped AlGaN by using alternative gas flow growth process in metal-organic vapor phase epitaxy (MOVPE). Using these techniques we fabricated 310 nm band deep UV light-emitting diodes (LEDs) with quaternary InxAlyGa1-x-yN active region. We achieved output power of 0.4 mW for a 308 nm LED and 0.8 mW for a 314 nm LED under room temperature pulsed operation.

  11. The influence of water on the Peierls stress of olivine at high pressures

    NASA Astrophysics Data System (ADS)

    Mei, S.; Suzuki, A. M.; Xu, L.; Kohlstedt, D. L.; Dixon, N. A.; Durham, W. B.

    2012-04-01

    To investigate the influence of water on the low-temperature plasticity of olivine under lithospheric conditions, we carried out a series of creep experiments on polycrystalline olivine at high pressures (~6 GPa), relatively low temperatures (873 ? T ? 1173 K), and hydrous conditions using a deformation-DIA. Samples were fabricated from fine powdered San Carlos olivine under hydrous conditions. In the experiments, a sample column composed of a sample and alumina pistons was assembled with a talc sleeve and graphite resistance heater into a 6.2-mm edge length cubic pressure medium. Experiments were carried out at the National Synchrotron Light Source at Brookhaven National Laboratory. In a run, differential stress and sample displacement were monitored in-situ using synchrotron x-ray diffraction and radiography, respectively. The low-temperature plasticity of olivine under hydrous conditions is constrained by our data with a Peierls stress of 4.2 0.3 GPa. This value is much lower than those reported the Peierls stress for olivine under anhydrous conditions (~ 6 - 15 GPa, Evans and Goetze, 1979; Raterron et al., 2004; Mei at al., 2010), indicating a significant influence of water on the low-temperature plasticity of olivine. The low-temperature flow behavior of olivine under hydrous conditions quantified in this study provides a necessary constraint for modeling the dynamic activities occurring within lithospheric mantle especially for those regions with the presence of water such as beneath a mid-ocean ridge and along a subducting slab.

  12. Distortion and Residual Stress in High-Pressure Die Castings: Simulation and Measurements

    NASA Astrophysics Data System (ADS)

    Hofer, P.; Kaschnitz, E.; Schumacher, P.

    2014-09-01

    Two individual high-pressure die casting geometries were developed to study the influence of process parameters and alloy composition on the distortion behavior of aluminum alloy castings. These geometries, a stress lattice and a V-shaped lid, tend to form residual stress due to a difference in wall thickness and a deliberate massive gating system. Castings were produced from two alloys: AlSi12(Fe) and AlSi10MnMg. In the experimental castings, the influence of important process parameters such as die temperature, ejection time, and cooling regime was examined. The time evolution of process temperatures was measured using thermal imaging. Subsequent to casting, distortion was measured by means of a tactile measuring device at ambient temperatures. The measured results were compared against a numerical process and stress simulations of the casting, ejection, and cooling process using the commercial finite element method software ANSYS Workbench. The heat transfer coefficients were adapted to the temperature distributions of the die, and the castings were observed by thermal imaging. A survey of the results of the comparison between simulation and experiment is given for both alloys.

  13. Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

    SciTech Connect

    Naresh-Kumar, G. Trager-Cowan, C.; Vilalta-Clemente, A.; Morales, M.; Ruterana, P.; Pandey, S.; Cavallini, A.; Cavalcoli, D.; Skuridina, D.; Vogt, P.; Kneissl, M.; Behmenburg, H.; Giesen, C.; Heuken, M.; Gamarra, P.; Di Forte-Poisson, M. A.; Patriarche, G.; Vickridge, I.

    2014-12-15

    We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al{sub 2}O{sub 3} high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  14. Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lu, Jing; Denninghoff, Dan; Yeluri, Ramya; Lal, Shalini; Gupta, Geetak; Laurent, Matthew; Keller, Stacia; DenBaars, Steven P.; Mishra, Umesh K.

    2013-06-01

    Different back barrier designs comprising of AlN, AlGaN, and InAlN layers are investigated for ultra-thin GaN channel N-polar high-electron-mobility-transistors grown by metalorganic chemical vapor deposition. A combinational back barrier with both AlGaN and InAlN materials is proposed. The dependence of channel conductivity on channel thickness is investigated for different back barrier designs. The study demonstrated that the back barrier design of AlN/InAlN/AlGaN is capable of retaining high channel conductivity for ultra-scaled channel thicknesses. For devices with 5-nm-thick channel, a sheet resistance of 230 ?/? and mobility 1400 cm2/V-s are achieved when measured parallel to the multi-step direction of the epi-surface.

  15. Al2O3/ZrO2 (Y2O3) Prepared by Combustion Synthesis Under High Gravity

    NASA Astrophysics Data System (ADS)

    Zhang, Long; Zhao, Zhongmin; Song, Yigang; Wang, Weiguo; Liu, Hongbo

    By introducing ZrO2 (4Y) powder into the thermit, Al2O3/ZrO2 (4Y) composite ceramics of different composition and microstructures were prepared through combustion synthesis under high gravity, and the correlations of composition, microstructures and mechanical properties of composite ceramics were investigated. The results of XRD, SEM and EDS showed that Al2O3/33%ZrO2 (4Y) were composed of random-orientated rod-shaped colonies consisting of a triangular dispersion of orderly submicron-nanometer t-ZrO2 fibers, surrounded by inter-colony regions consisting of spherically-shaped micronmeter t-ZrO2 grains; meanwhile, Al2O3/45%ZrO2 (4Y) were comprised of spherically-shaped micron-meter t-ZrO2 grains. Similar to the international directionally solidified Al2O3/ZrO2 (Y2O3), the EDS results also indicated that there are no impurities, amorphous phases and grain boundaries but clean phase interfaces in two ceramic composites. Compared to the international directionally solidified Al2O3/ZrO2 (Y2O3), the increase in hardness and flexural strength of Al2O3/33%ZrO2 (4Y) in the experiment was due to small-size defect and high fracture toughness induced by compressive residual stress effect and transformation toughening mechanisms; meanwhile, high flexural strength of Al2O3/45%ZrO2 (4Y) was considered to be a result of the fine spherically-shaped t-ZrO2 grains separated from the melt under high gravity, and high fracture toughness induced by transformation toughening and micro-crack toughening mechanisms.

  16. Electrorheological fluid with an extraordinarily high yield stress

    NASA Astrophysics Data System (ADS)

    Zhang, Yuling; Lu, Kunquan; Rao, Guanghui; Tian, Yu; Zhang, Shaohua; Liang, Jingkui

    2002-02-01

    Surface modified complex strontium titanate microparticles are synthesized by means of a modified sol-gel technique. A suspension composed of these particles immersed in a silicone oil exhibits excellent electrorheological properties attractive to industry and technology applications: a yield stress as high as 27 kPa in an applied electric field of 3 kV/mm, a low leakage current, wide dynamic ranges in temperature and shear rate, and a long-term stability against sedimentation. In addition to the high dielectric constant of strontium titanate, surfactant and water-free character of the particles may be responsible for the dramatic improvement of the electrorheological properties of the suspension.

  17. Aggregation-prone c9FTD/ALS poly(GA) RAN-translated proteins cause neurotoxicity by inducing ER stress.

    PubMed

    Zhang, Yong-Jie; Jansen-West, Karen; Xu, Ya-Fei; Gendron, Tania F; Bieniek, Kevin F; Lin, Wen-Lang; Sasaguri, Hiroki; Caulfield, Thomas; Hubbard, Jaime; Daughrity, Lillian; Chew, Jeannie; Belzil, Veronique V; Prudencio, Mercedes; Stankowski, Jeannette N; Castanedes-Casey, Monica; Whitelaw, Ena; Ash, Peter E A; DeTure, Michael; Rademakers, Rosa; Boylan, Kevin B; Dickson, Dennis W; Petrucelli, Leonard

    2014-10-01

    The occurrence of repeat-associated non-ATG (RAN) translation, an atypical form of translation of expanded repeats that results in the synthesis of homopolymeric expansion proteins, is becoming more widely appreciated among microsatellite expansion disorders. Such disorders include amyotrophic lateral sclerosis and frontotemporal dementia caused by a hexanucleotide repeat expansion in the C9ORF72 gene (c9FTD/ALS). We and others have recently shown that this bidirectionally transcribed repeat is RAN translated, and the "c9RAN proteins" thusly produced form neuronal inclusions throughout the central nervous system of c9FTD/ALS patients. Nonetheless, the potential contribution of c9RAN proteins to disease pathogenesis remains poorly understood. In the present study, we demonstrate that poly(GA) c9RAN proteins are neurotoxic and may be implicated in the neurodegenerative processes of c9FTD/ALS. Specifically, we show that expression of poly(GA) proteins in cultured cells and primary neurons leads to the formation of soluble and insoluble high molecular weight species, as well as inclusions composed of filaments similar to those observed in c9FTD/ALS brain tissues. The expression of poly(GA) proteins is accompanied by caspase-3 activation, impaired neurite outgrowth, inhibition of proteasome activity, and evidence of endoplasmic reticulum (ER) stress. Of importance, ER stress inhibitors, salubrinal and TUDCA, provide protection against poly(GA)-induced toxicity. Taken together, our data provide compelling evidence towards establishing RAN translation as a pathogenic mechanism of c9FTD/ALS, and suggest that targeting the ER using small molecules may be a promising therapeutic approach for these devastating diseases. PMID:25173361

  18. High-cycle fatigue behavior of Ti-5Al-2.5Sn ELI alloy forging at low temperatures

    SciTech Connect

    Ono, Yoshinori; Yuri, Tetsumi; Ogata, Toshio; Demura, Masahiko; Matsuoka, Saburo; Sunakawa, Hideo

    2014-01-27

    High-cycle fatigue properties of Ti-5Al-2.5Sn Extra Low Interstitial (ELI) alloy forging were investigated at low temperatures. The high-cycle fatigue strength at low temperatures of this alloy was relatively low compared with that at ambient temperature. The crystallographic orientation of a facet formed at a fatigue crack initiation site was determined by electron backscatter diffraction (EBSD) method in scanning electron microscope (SEM) to understand the fatigue crack initiation mechanism and discuss on the low fatigue strength at low temperature. Furthermore, in terms of the practical use of this alloy, the effect of the stress ratio (or mean stress) on the high-cycle fatigue properties was evaluated using the modified Goodman diagram.

  19. Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation

    NASA Astrophysics Data System (ADS)

    Moshe, O.; Rich, D. H.; Birner, S.; Povolotskyi, M.; Damilano, B.; Massies, J.

    2010-10-01

    We have studied the excitation- and polarization-dependent optical properties of GaN/AlN self-assembled quantum dots (QDs) grown on Si(111) substrates. Ensembles of QDs were subject to various external stress configurations that resulted from the thermal expansion coefficient mismatch between the GaN/AlN layers and the Si(111) substrate and ranged from in-plane uniaxial stress, primarily along the ?1120? directions, to in-plane biaxial stress, having magnitudes ranging from 20-30 kbar. Limited regions of uniaxial stress were obtained by exploiting naturally occurring microcracks that form during the postgrowth cooling. These microcracks act as stressors in order to create the highly localized regions of uniaxial stress. The local strain tensors for such QDs, which are subject to an interfacial stress perturbation, have been determined by modeling the dependence of the QD excitonic transition energy on the interfacial stress. Cathodoluminescence (CL) measurements of the excitonic transitions exhibit an in-plane linear polarization anisotropy in close proximity to microcracks. The polarization anisotropy is strongly dependent on the sample temperature and the electron beam excitation conditions used to excite the QD ensemble. Localized CL spectroscopy of the QDs exhibits emissions from both the ground and excited states, whose relative contributions depend on the level of excitation and temperature. Experimental results indicate that the polarization anisotropy vanishes at high temperatures (300 K) with an increasing excitation of the QDs, while the anisotropy decreases more slowly with excitation at low temperatures (60 K). A theoretical modeling of the effect of carrier filling on the polarization anisotropy and the excitonic transition energy was performed, as based on three-dimensional self-consistent solutions of the Schrdinger and Poisson equations using the 66 k?p and effective mass methods for calculations of the e-h wave functions and electron and hole quasi-Fermi levels for varying levels of state filling. We attribute carrier filling and a thermal excitation of holes into higher energy QD hole states during excitation to account for the observed gradual decrease in the polarization anisotropy with an increasing electron-hole pair excitation density at T =300 K.

  20. High stress actuation by dielectric elastomer with oil capsules

    NASA Astrophysics Data System (ADS)

    La, Thanh-Giang; Lau, Gih-Keong; Shiau, Li-Lynn; Tan, Adrian W. Y.

    2014-03-01

    Though capable of generating a large strain, dielectric elastomer actuators (DEAs) generate only a moderate actuation stress not more than 200kPa, which seriously limits its use as artificial muscles for robotic arm. Enhancement of dielectric strength (greater than 500MV/m) by dielectric oil immersion could possibly enable it a larger force generation. Previously, the immersion was done in an oil bath, which limits portability together with DEAs. In this study, we developed portable capsules to enclose oil over the DEA substrate (VHB 4905). The capsules is made of a thinner soft acrylic membrane and they seals dielectric liquid oil (Dow Corning Fluid 200 50cSt). The DEA substrate is a graphiteclad VHB membrane, which is pre-stretched with pure-shear boundary condition for axial actuation. When activated under isotonic condition, the oil-capsule DEA can sustain a very high dielectric field up to 903 MV/m and does not fail; whereas, the dry DEA breaks down at a lower electric field at 570 MV/m. Furthermore, the oil-capsule DEA can produces higher isometric stress change up to 1.05MPa, which is 70% more than the maximum produced by the dry DEA. This study confirmed that oil capping helps DEA achieve very high dielectric strength and generate more stress change for work.

  1. Nanotwins and stacking faults in high-strength epitaxial Ag/Al multilayer films

    NASA Astrophysics Data System (ADS)

    Bufford, D.; Bi, Z.; Jia, Q. X.; Wang, H.; Zhang, X.

    2012-11-01

    Epitaxial Ag/Al multilayer films have high hardness (up to 5.5 GPa) in comparison to monolithic Ag and Al films (2 and 1 GPa). High-density nanotwins and stacking faults appear in both Ag and Al layers, and stacking fault density in Al increases sharply with decreasing individual layer thickness, h. Hardness increases monotonically with decreasing h, with no softening. In comparison, epitaxial Cu/Ni multilayers reach similar peak hardness when h ? 5 nm, but soften at smaller h. High strength in Ag/Al films is primarily a result of layer interfaces, nanotwins, and stacking faults, which are strong barriers to dislocation transmission.

  2. Faceted growth of primary Al2Cu crystals during directional solidification in high magnetic field

    NASA Astrophysics Data System (ADS)

    Li, Chuanjun; Ren, Zhongming; Shen, Yu; Wang, Qiuliang; Dai, Yinming; Wang, Hui

    2013-10-01

    The high magnetic field is widely used to modify the crystal morphology. In this work, the effect of the magnetic field on growing behavior of faceted crystals in the Al-40 wt. %Cu alloy was investigated using directional solidification technique. It was found that the faceted growth of primary Al2Cu phase was degraded and the primary spacing was reduced upon applying the magnetic field. Additionally, the length of the mushy zone first decreased and then increased with increase of the magnetic field intensity. The quantitative analysis reveals that the shear stress induced by the fluid motion is insufficient to break the atom bonds at the solid-liquid interface. However, both of the thermoelectric magnetic convection (TEMC) and the thermoelectric magnetic force (TEMF) cause dendrites to fracture and reduce the primary spacing. The two effects also weaken the faceting growth. Moreover, the instability of the solid-liquid interface is generated by the TEMF, which further leads to degrade the faceted growth. The length of mushy zone was changed by the TEMC and reached the minimum in the magnetic field of 0.5 T, which is in good agreement with the predicted value (0.83 T).

  3. CaAl 12Si 4O 27, a New High-Pressure Phase Containing Al 6O 19 Clusters

    NASA Astrophysics Data System (ADS)

    Grey, I. E.; Madsen, I. C.; Hibberson, W. O.; O'Neill, H. St. C.

    2000-09-01

    CaAl12Si4O27, a new high-pressure phase in the CaO-Al2O3-SiO2 system, was prepared at 1550C and 14 GPa. It has trigonal symmetry, P-3, with a=7.223(1) and c=8.614(3) . Its structure was solved using crystal chemistry principles and refined using the Rietveld method applied to powder X-ray diffraction data, Rwp=6.1%, RB=2.7%. The structure is a new type based on a close-packed anion lattice with a mixed layer stacking sequence ABACA?(hc)2 and with Ca atoms ordered in one-seventh of the anion sites in alternate c-stacked layers. The Si atoms are ordered in both octahedral and tetrahedral sites while the Al atoms are ordered in two independent octahedral sites. Octahedral edge-shared clusters, Al6O19, occur in the structure, interconnected within the close-packed layers by corner-linking to SiO4 tetrahedra. The clusters are also connected by corner-sharing to nine-member rings of edge-shared Al- and Si-centered octahedra in adjacent layers. The new phase has structural features in common with the barium titanium ferrite of similar composition, BaFe11Ti3O23, as well as with the mineral simpsonite, Al4Ta3O13(OH), and alkali metal niobates which contain Nb6O19 clusters.

  4. Fundamental studies of stress distributions and stress relaxation in oxide scales on high temperature alloys

    SciTech Connect

    Shores, D.A.; Stout, J.H.; Gerberich, W.W.

    1992-06-01

    The high temperature X-ray diffraction system developed for this program is being used to measure the strains which develop during oxidation. This is being applied to Ni/NiO and Cr/Cr[sub 2]O[sub 3]. Our work suggests tat the oxide and metal crystalline texture, anisotropic elastic modulus and anisotropic thermal expansion can have a pronounced effect on strain state of these systems. Acoustic emission is being used to study oxide scale failure (fracture) during oxidation. AE data from 304 stainless steel are being used to develop a statistical model of fracture process. Strength of metal/scale interface is an important property that has been difficult to quantify. Using Nano-indentation and scratch techniques developed for characterizing thin film interfaces, an effort has begun to measure the fracture toughness of the metal/scale interface. Mathematical modelling of origin and time evolution of growth stresses is an extension and improvement of previous models. The current effort employs a more sophisticated stress analysis and expands the scope to include other stress relaxation process. The interaction between the modeling studies and the X-ray diffraction measurements provides a natural credibility check to both efforts.

  5. Stress corrosion cracking of a superplastic and nonsuperplastic Zn-22.3Al alloy in 3% NaCl solution

    SciTech Connect

    Yeh, M.S.; Chang, J.C.; Chuang, T.H.

    1999-04-01

    Through appropriate heat treatments, a Zn-22.3wt%Al (Zn-22.3Al) alloy can be prepared in both superplastic and nonsuperplastic specimens. It has been found that the superplastic Zn-22.3Al alloy possesses a very fine microduplex structure, while the nonsuperplastic alloy has a lamellar duplex structure with locally coarsened second phases. The very different microstructures of both specimens result in different corrosion and stress corrosion cracking (SCC) behaviors in 3% NaCl solution. In addition, the fractographs of both the superplastic and nonsuperplastic Zn-22.3Al specimens after SCC tests under various anodic applied potentials have been compared. Through the observations, a mechanism for the SCC in this case was proposed to show that the cracks proceeded with successive processes of oxide film rupture and Zn-Al matrix tearing. Such a mechanism is more evident for the fractography of nonsuperplastic specimens, on which a series of parallel strips inserted with dimple-bands can be obviously found.

  6. Controlling the stress of growing GaN on 150-mm Si (111) in an AlN/GaN strained layer superlattice

    NASA Astrophysics Data System (ADS)

    Lin, Po-Jung; Huang, Shih-Yung; Wang, Wei-Kai; Chen, Che-Lin; Chung, Bu-Chin; Wuu, Dong-Sing

    2016-01-01

    For growing a thicker GaN epilayer on a Si substrate, generally, a larger wafer bowing with tensile stress caused by the mismatch of thermal expansion coefficients between GaN and Si easily generates a cracked surface during cool down. In this work, wafer bowing was investigated to control stress by changing the thickness of a GaN layer from 18.6 to 27.8 nm in a 80-paired AlN/GaN strained layer superlattice (SLS) grown on a 150-mm Si (111) substrate. The results indicated that wafer bowing was inversely proportional to the total thickness of epilayer and the thickness of the GaN layer in the AlN/GaN SLS, since higher compressive stress caused by a thicker GaN layer during SLS growth could compensate for the tensile stress generated during cool down. After returning to room temperature, the stress of the AlN/GaN SLS was still compressive and strained in the a-axis. This is due to an unintended AlGaN grading layer was formed in the AlN/GaN SLS. This AlGaN layer reduced the lattice mismatch between AlN and GaN and efficiently accumulated stress without causing relaxation.

  7. Genetic dissection of Al tolerance QTLs in the maize genome by high density SNP scan

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Aluminum (Al) toxicity is an important limitation to food security in the tropical and subtropical regions. High Al saturation in acid soils limits root development and its ability to uptake water and nutrients. In this study, we present a genome scan for Al tolerance loci with over 50,000 GBS-based...

  8. High strength and high electrical conductivity of UFG Al-2%Fe alloy achieved by high-pressure torsion and aging

    NASA Astrophysics Data System (ADS)

    Cubero-Sesin, J. M.; Arita, M.; Watanabe, M.; Horita, Z.

    2014-08-01

    In this study, Al-2%Fe samples extracted from a cast ingot in the shape of rings were processed by High-Pressure Torsion (HPT) at room temperature. Suitable specimens were extracted for evaluation of mechanical properties and electrical resistivity. High tensile strength of ~600 MPa was attained by HPT due to grain refinement down to an average grain size of ~130 nm and by subsequent aging accompanied by nano-sized (~10 nm) AhFe precipitates. The resulting conductivity (IACS%) was recovered from ~40% in the steady state after HPT to well above 50% in the peak-aged condition, which is in the range of current Al electrical alloys.

  9. High-Mobility Group Box 1, Oxidative Stress, and Disease

    PubMed Central

    Kang, Rui; Zeh, Herbert J.

    2011-01-01

    Abstract Oxidative stress and associated reactive oxygen species can modify lipids, proteins, carbohydrates, and nucleic acids, and induce the mitochondrial permeability transition, providing a signal leading to the induction of autophagy, apoptosis, and necrosis. High-mobility group box 1 (HMGB1) protein, a chromatin-binding nuclear protein and damage-associated molecular pattern molecule, is integral to oxidative stress and downstream apoptosis or survival. Accumulation of HMGB1 at sites of oxidative DNA damage can lead to repair of the DNA. As a redox-sensitive protein, HMGB1 contains three cysteines (Cys23, 45, and 106). In the setting of oxidative stress, it can form a Cys23-Cys45 disulfide bond; a role for oxidative homo- or heterodimerization through the Cys106 has been suggested for some of its biologic activities. HMGB1 causes activation of nicotinamide adenine dinucleotide phosphate oxidase and increased reactive oxygen species production in neutrophils. Reduced and oxidized HMGB1 have different roles in extracellular signaling and regulation of immune responses, mediated by signaling through the receptor for advanced glycation end products and/or Toll-like receptors. Antioxidants such as ethyl pyruvate, quercetin, green tea, N-acetylcysteine, and curcumin are protective in the setting of experimental infection/sepsis and injury including ischemia-reperfusion, partly through attenuating HMGB1 release and systemic accumulation. Antioxid. Redox Signal. 14, 13151335. PMID:20969478

  10. Invasive Knotweeds are Highly Tolerant to Salt Stress

    NASA Astrophysics Data System (ADS)

    Rouifed, Soraya; Byczek, Coline; Laffray, Daniel; Piola, Florence

    2012-12-01

    Japanese knotweed s.l. are some of the most invasive plants in the world. Some genotypes are known to be tolerant to the saline concentrations found in salt marshes. Here we focus on tolerance to higher concentrations in order to assess whether the species are able to colonize and establish in highly stressful environments, or whether salt is an efficient management tool. In a first experiment, adult plants of Fallopia japonica, Fallopia × bohemica and Fallopia sachalinensis were grown under salt stress conditions by watering with saline concentrations of 6, 30, 120, or 300 g L-1 for three weeks to assess the response of the plants to a spill of salt. At the two highest concentrations, their leaves withered and fell. There were no effects on the aboveground parts at the lowest concentrations. Belowground dry weight and number of buds were reduced from 30 and 120 g L-1 of salt, respectively. In a second experiment, a single spraying of 120 g L-1 of salt was applied to individuals of F. × bohemica and their stems were clipped to assess the response to a potential control method. 60 % of the plants regenerated. Regeneration was delayed by the salt treatment and shoot growth slowed down. This study establishes the tolerance of three Fallopia taxa to strong salt stress, with no obvious differences between taxa. Their salt tolerance could be an advantage in their ability to colonize polluted environments and to survive to spills of salt.

  11. A High shear stress segment along the San Andreas Fault: Inferences based on near-field stress direction and stress magnitude observations in the Carrizo Plain Area

    SciTech Connect

    Castillo, D. A.,; Younker, L.W.

    1997-01-30

    Nearly 200 new in-situ determinations of stress directions and stress magnitudes near the Carrizo plain segment of the San Andreas fault indicate a marked change in stress state occurring within 20 km of this principal transform plate boundary. A natural consequence of this stress transition is that if the observed near-field ``fault-oblique`` stress directions are representative of the fault stress state, the Mohr-Coulomb shear stresses resolved on San Andreas sub-parallel planes are substantially greater than previously inferred based on fault-normal compression. Although the directional stress data and near-hydrostatic pore pressures, which exist within 15 km of the fault, support a high shear stress environment near the fault, appealing to elevated pore pressures in the fault zone (Byerlee-Rice Model) merely enhances the likelihood of shear failure. These near-field stress observations raise important questions regarding what previous stress observations have actually been measuring. The ``fault-normal`` stress direction measured out to 70 km from the fault can be interpreted as representing a comparable depth average shear strength of the principal plate boundary. Stress measurements closer to the fault reflect a shallower depth-average representation of the fault zone shear strength. If this is true, only stress observations at fault distances comparable to the seismogenic depth will be representative of the fault zone shear strength. This is consistent with results from dislocation monitoring where there is pronounced shear stress accumulation out to 20 km of the fault as a result of aseismic slip within the lower crust loading the upper locked section. Beyond about 20 km, the shear stress resolved on San Andreas fault-parallel planes becomes negligible. 65 refs., 15 figs.

  12. High temperature oxidation resistant coatings for the directionally solidified Ni-Nb-Cr-Al eutectic superalloy

    NASA Technical Reports Server (NTRS)

    Strangman, T. E.; Ulion, N. E.; Felten, E. J.

    1977-01-01

    Protective coatings required for the Ni-Nb-Cr-Al directionally solidified eutectic superalloy were developed and evaluated on the basis of oxidation resistance, diffusional stability, thermal fatigue, and creep resistance. NiCrAlY+Pt and NiCrAlY physical vapor-deposition coating systems exhibited the best combination of properties. Burner-rig testing indicated that the useful life of a 127-micron-thick NiCrAlY+Pt coating exceeds 1000 h at 1366 K. Eutectic-alloy creep lives at 1311 K and a stress of 151.7 MN/sq m were greater for NiCrAlY+Pt-coated specimens than for uncoated specimens by a factor of two.

  13. Yield Stress of Periclase at High Pressure and Low Temperature

    NASA Astrophysics Data System (ADS)

    Schmidt, N.; Chen, J.; Raterron, P.

    2001-12-01

    Magnesiowustite (Mg,Fe)O is a significant constituent of the Earth lower mantle. In a follow-up investigation of the rheological properties of MgO periclase as an analog for magnesiowustite, one powder specimen of MgO (micrometric grain size) has been investigated at pressures up to 10 GPa and temperatures ranging from 25\\deg C to 300\\deg C. The experiment was performed in a multi-anvil (SAM85, DIA-type) high-pressure apparatus, with boron epoxy as pressure medium and a BN capsule enclosing the specimen. Temperature was measured with a W3%Re-W25%Re thermocouple situated next to the sample, while the cell pressure (NaCl Decker's scale) and the stress in the sample (diffraction peak broadening, a review in Weidner, 1998) were monitored by using in-situ synchrotron X-ray diffraction at the superconductor wiggler beam line of the NSLS facility (Brookhaven, NY). The run product was investigated by Transmission Electron Microscopy (MET) using a Jeol 200 CX microscope. From the X-ray diffraction data, we infer that periclase exhibits at room temperature a transition from elastic to plastic deformation at differential stresses higher than 3 GPa. A yield stress value of just over 4 GPa was measured under these conditions. Slight sample relaxation over time was also observed during heating at 300\\deg C. Although the specimen average grain size was larger than typically 150 nm during the run, the run-product exhibits a very small average grain size (about 40 nm measured by X-ray diffraction), which suggests that nano-cracking occurred in the highly stressed material during decompression. Investigation of the run product by TEM confirms the X-ray diffraction data. Most crystals exhibit, indeed, nanometric sub-domains and numerous defects. Among these defects, the expected <110>\\{1/line{1} 0\\} slip systems have been identified and seems to dominate the deformation at high pressure and low temperature, although cleavage along the \\{001\\} planes may also have occurred at low pressure during decompression. Weidner (1998) Rheological studies at high pressure, in "Ultrahigh-pressure mineralogy: Physics and chemistry of the Earth's deep interior", R. J. Hemley Ed., Reviews in Mineralogy, vol.37, Mineralogical Society of America, Washington D.C., pp.493-524.

  14. Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Bajo, M. Montes E-mail: Martin.Kuball@bristol.ac.uk; Sun, H.; Uren, M. J.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk

    2014-06-02

    The evolution of AlGaN/GaN high electron mobility transistors under off-state stress conditions is studied by gate leakage current (I{sub g}) monitoring, electroluminescence (EL), and atomic force microscope (AFM) imaging at room temperature. It is found that the number of off-state failure sites as identified by EL increases over time during stress until it reaches a saturation value. I{sub g} increases accordingly during stress until this saturation number of failure sites is reached. AFM scanning of the device surface stripped of metal contacts and passivation reveals surface pits corresponding to the location of the EL spots. These pits have an elongated shape oriented towards the drain contact whose length is correlated with the distance to the adjacent pits and with the time since their appearance during the stress experiment. A model for the generation and evolution of the off-state stress-related failure sites is proposed consistent with the experimental results, bringing together surface migration of electrochemical species with trap-based leakage mechanisms and resulting in the formation of an exclusion zone around each failure site.

  15. AlGaN/GaN high electron mobility transistor with Al2O3+BCB passivation

    NASA Astrophysics Data System (ADS)

    Zhang, Sheng; Wei, Ke; Yu, Le; Liu, Guo-Guo; Huang, Sen; Wang, Xin-Hua; Pang, Lei; Zheng, Ying-Kui; Li, Yan-Kui; Ma, Xiao-Hua; Sun, Bing; Liu, Xin-Yu

    2015-11-01

    In this paper, A12O3 ultrathin film used as the surface passivation layer for AlGaN/GaN high electron mobility transistor (HEMT) is deposited by thermal atomic layer deposition (ALD), thereby avoiding plasma-induced damage and erosion to the surface. A comparison is made between the surface passivation in this paper and the conventional plasma enhanced chemical vapor deposition (PECVD) SiN passivation. A remarkable reduction of the gate leakage current and a significant increase in small signal radio frequency (RF) performance are achieved after applying Al2O3+BCB passivation. For the Al2O3+BCB passivated device with a 0.7 μm gate, the value of fmax reaches up to 100 GHz, but it decreases to 40 GHz for SiN HEMT. The fmax/ft ratio (≥ 4) is also improved after Al2O3+BCB passivation. The capacitance–voltage (C–V) measurement demonstrates that Al2O3+BCB HEMT shows quite less density of trap states (on the order of magnitude of 1010 cm‑2) than that obtained at commonly studied SiN HEMT.

  16. Electrochemical investigation on the hydrogen permeation behavior of 7075-T6 Al alloy and its influence on stress corrosion cracking

    NASA Astrophysics Data System (ADS)

    Zheng, Chuan-bo; Yan, Bing-hao; Zhang, Ke; Yi, Guo

    2015-07-01

    The hydrogen permeation behavior and stress corrosion cracking (SCC) susceptibility of precharged 7075-T6 Al alloy were investigated in this paper. Devanthan-Stachurski (D-S) cell tests were used to measure the apparent hydrogen diffusivity and hydrogen permeation current density of specimens immersed in 3.5wt% NaCl solution. Electrochemical experiment results show that the SCC susceptibility is low during anodic polarization. Both corrosion pits and hydrogen-induced cracking are evident in scanning electron microscope images after the specimens have been charging for 24 h.

  17. Influence of predeformation and ageing of an Al-Zn-Mg alloy. 2: Modeling of precipitation kinetics and yield stress

    SciTech Connect

    Deschamps, A.; Brechet, Y.

    1998-12-11

    The authors present a model for precipitation kinetics integrating nucleation growth and coarsening. This model allows the description of competitive kinetics of heterogenous and homogeneous precipitation. The precipitation model is coupled to a model for structural hardening predicting the yield stress. This structural hardening model includes the possibility of taking into account the distribution of precipitate size and strength. The model is applied to experimental data on age hardening of Al-Zn-Mg alloys, and allows to describe the effect of a prestraining on the subsequent aging behavior.

  18. Initiation of stress corrosion cracking of Ti90-Al6-V4 wire in aqueous solution by holometry

    NASA Astrophysics Data System (ADS)

    Habib, Khaled J.

    1994-03-01

    A study on stress corrosion cracking (SCC) of Ti90-AL6-V4 wire in anhydrous methanol has been conducted. The study focused on developing a relationship between microscopic deformation and corrosion current density in the incubation period of the SCC of the wire. The study succeeded in non-destructively monitoring the initiation stage of SCC by holographic interferometry `Holometry'. The monitoring process was carried out in situ applying the real-time holographic interferometry. In the mean time, the corrosion current density was determined by typical methods of electrochemistry. Consequently, a relationship between the influence of microscopic deformations on the corrosion current density is established.

  19. Expression Characterization of Stress Genes Under High and Low Temperature Stresses in the Pacific Oyster, Crassostrea gigas.

    PubMed

    Zhu, Qihui; Zhang, Linlin; Li, Li; Que, Huayong; Zhang, Guofan

    2016-04-01

    As a characteristic sessile inhabitant of the intertidal zone, the Pacific oyster Crassostrea gigas occupies one of the most physically stressful environments on earth. With high exposure to terrestrial conditions, oysters must tolerate broad fluctuations in temperature range. However, oysters' cellular and molecular responses to temperature stresses have not been fully characterized. Here, we analyzed oyster transcriptome data under high and low temperatures. We also identified over 30 key temperature stress-responsive candidate genes, which encoded stress proteins such as heat shock proteins and apoptosis-associated proteins. The expression characterization of these genes under short-term cold and hot environments (5 and 35 °C) and long-term cold environments (5 °C) was detected by quantitative real-time PCR. Most of these genes reached expression peaks during the recovery stage after 24 h of heat stress, and these genes were greatly induced around day 3 in long-term cold stress while responded little to short-term cold stress. In addition, in the second heat stress after 2 days of recovery, oysters showed milder expression in these genes and a lower mortality rate, which indicated the existence of plasticity in the oyster's response to heat stress. We confirmed that homeostatic flexibility and anti-apoptosis might be crucial centers of temperature stress responses in oysters. Furthermore, we analyzed stress gene families in 11 different species and found that the linage-specific expansion of stress genes might be implicated in adaptive evolution. These results indicated that both plasticity and evolution played an important role in the stress response adaptation of oysters. PMID:26746430

  20. Reaction rim growth in the system MgO-Al2O3-SiO2 under uniaxial stress

    NASA Astrophysics Data System (ADS)

    Gtze, Lutz Christoph; Abart, Rainer; Rybacki, Erik; Keller, Lukas M.; Petrishcheva, Elena; Dresen, Georg

    2010-07-01

    We synthesize reaction rims between thermodynamically incompatible phases in the system MgO-Al2O3-SiO2 applying uniaxial load using a creep apparatus. Synthesis experiments are done in the MgO-SiO2 and in the MgO-Al2O3 subsystems at temperatures ranging from 1150 to 1350 C imposing vertical stresses of 1.2 to 29 MPa at ambient pressure and under a constant flow of dry argon. Single crystals of synthetic and natural quartz and forsterite, synthetic periclase and synthetic corundum polycrystals are used as starting materials. We produce enstatite rims at forsterite-quartz contacts, enstatite-forsterite double rims at periclase-quartz contacts and spinel rims at periclase-corundum contacts. We find that rim growth under the dry conditions of our experiments is sluggish compared to what has been found previously in nominally dry piston cylinder experiments. We further observe that the nature of starting material, synthetic or natural, has a major influence on rim growth rates, where natural samples are more reactive than synthetic ones. At a given temperature the effect of stress variation is larger than what is anticipated from the modification of the thermodynamic driving force for reaction due to the storage of elastic strain energy in the reactant phases. We speculate that this may be due to modification of the physical properties of the polycrystals that constitute the reaction rims or by deformation under the imposed load. In our experiments rim growth is very sluggish at forsterite-quartz interfaces. Rim growth is more rapid at periclase-quartz contacts. The spinel rims that are produced at periclase-corundum interfaces show parabolic growth indicating that reaction rim growth is essentially diffusion controlled. From the analysis of time series done in the MgO-Al2O3 subsystem we derive effective diffusivities for the Al2O3 and the MgO components in a spinel polycrystal as D_{MgO} = 1.4 0.2 \\cdot 10^{-15} m2/s and D_{Al_2O_3} = 3.7 0.6 \\cdot 10^{-16} m2/s for T = 1350 C and a vertical stress of 2.9 MPa.

  1. High lung volume increases stress failure in pulmonary capillaries

    NASA Technical Reports Server (NTRS)

    Fu, Z.; Costello, M. L.; Tsukimoto, K.; Prediletto, R.; Elliott, A. R.; Mathieu-Costello, O.; West, J. B.

    1992-01-01

    We previously showed that when pulmonary capillaries in anesthetized rabbits are exposed to a transmural pressure (Ptm) of approximately 40 mmHg, stress failure of the walls occurs with disruption of the capillary endothelium, alveolar epithelium, or sometimes all layers. The present study was designed to test whether stress failure occurred more frequently at high than at low lung volumes for the same Ptm. Lungs of anesthetized rabbits were inflated to a transpulmonary pressure of 20 cmH2O, perfused with autologous blood at 32.5 or 2.5 cmH2O Ptm, and fixed by intravascular perfusion. Samples were examined by both transmission and scanning electron microscopy. The results were compared with those of a previous study in which the lung was inflated to a transpulmonary pressure of 5 cmH2O. There was a large increase in the frequency of stress failure of the capillary walls at the higher lung volume. For example, at 32.5 cmH2O Ptm, the number of endothelial breaks per millimeter cell lining was 7.1 +/- 2.2 at the high lung volume compared with 0.7 +/- 0.4 at the low lung volume. The corresponding values for epithelium were 8.5 +/- 1.6 and 0.9 +/- 0.6. Both differences were significant (P less than 0.05). At 52.5 cmH2O Ptm, the results for endothelium were 20.7 +/- 7.6 (high volume) and 7.1 +/- 2.1 (low volume), and the corresponding results for epithelium were 32.8 +/- 11.9 and 11.4 +/- 3.7. At 32.5 cmH2O Ptm, the thickness of the blood-gas barrier was greater at the higher lung volume, consistent with the development of more interstitial edema. Ballooning of the epithelium caused by accumulation of edema fluid between the epithelial cell and its basement membrane was seen at 32.5 and 52.5 cmH2O Ptm. At high lung volume, the breaks tended to be narrower and fewer were oriented perpendicular to the axis of the pulmonary capillaries than at low lung volumes. Transmission and scanning electron microscopy measurements agreed well. Our findings provide a physiological mechanism for other studies showing increased capillary permeability at high states of lung inflation.

  2. Defining Structure and Stress in Deep, High Temperature Geothermal Wells

    NASA Astrophysics Data System (ADS)

    Lawrence, M. J.; McNamara, D. D.; Massiot, C.; Bignall, G.

    2010-12-01

    Extreme T-P (temperature - pressure) environments associated with deep geothermal drilling in the Taupo Volcanic Zone (TVZ), New Zealand have limited the use of conventional geophysical borehole logging tools, and interpretation of fracture character and controls on permeability in the geothermal systems. Development of AFIT logging tools with high temperature capabilities has enabled detailed determination of structure (fractures and faults) and variations in the in-situ stress orientations in hot (up to 300 C) and deep (to 3 km TVD) TVZ geothermal wells, as presented here. Recent surveys at Wairakei, Kawerau, Rotokawa and Ngatamariki have provided detailed information of fracture controlled permeability in these fields, and positively impacted production and injection well drilling strategies. Current application of high temperature tools by geothermal developers is a precursor to the detailed structural investigation that will be undertaken for a proposed deeper (to 5 km depth) science-exploration well, planned to be drilled in the TVZ in 2013-14.

  3. High Fluid Shear Stress and Spatial Shear Stress Gradients Affect Endothelial Proliferation, Survival, and Alignment

    PubMed Central

    Dolan, Jennifer M.; Meng, Hui; Singh, Sukhjinder; Paluch, Rocco; Kolega, John

    2016-01-01

    Cerebral aneurysms develop near bifurcation apices, where complex hemodynamics occur: Flow impinges on the apex, accelerates into branches, then slows again distally, creating high wall shear stress (WSS) and positive and negative spatial gradients in WSS (WSSG). Endothelial responses to these kinds of high WSS hemodynamic environments are not well characterized. We examined endothelial cells (ECs) under elevated WSS and positive and negative WSSG using a flow chamber with constant-height channels to create regions of uniform WSS and converging and diverging channels to create positive and negative WSSG, respectively. Cultured bovine aortic ECs were subjected to 3.5 and 28.4 Pa with and without WSSG for 24 and 36 h. High WSS inhibited EC alignment to flow, increased EC proliferation assessed by bromodeoxyuridine incorporation, and increased apoptosis determined by terminal deoxynu-cleotidyl transferase dUTP-mediated nick-end labeling. These responses to high WSS were either accentuated or ameliorated by WSSG: Positive WSSG (+980 Pa/m) inhibited alignment and stimulated proliferation and apoptosis, whereas negative WSSG (−1120 Pa/m) promoted alignment and suppressed proliferation and apoptosis. These results demonstrate that ECs discriminate between positive and negative WSSG under high WSS conditions. EC responses to positive WSSG may contribute to pathogenic remodeling that occurs at bifurcations preceding aneurysm formation. PMID:21312062

  4. Chronic High Pressure-Induced Arterial Oxidative Stress

    PubMed Central

    Ungvari, Zoltan; Csiszar, Anna; Kaminski, Pawel M.; Wolin, Michael S.; Koller, Akos

    2004-01-01

    Regardless of the underlying pathological mechanisms oxidative stress seems to be present in all forms of hypertension. Thus, we tested the hypothesis that chronic presence of high pressure itself elicits increased arterial O2.− production. Hypertension was induced in rats by abdominal aortic banding (Ab). Rats with Ab had elevated pressure in vessels proximal and normal pressure in vessels distal to the coarctation, yet both vascular beds were exposed to the same circulating factors. Compared to normotensive hind limb arteries (HLAs) hypertensive forelimb arteries (FLAs) exhibited 1) impaired dilations to acetylcholine and the nitric oxide donor S-nitroso-N-acetyl-d,l-penicillamine that were restored by administration of superoxide dismutase; 2) an increased production of O2.− (measured by lucigenin chemiluminescence and ethidium bromide fluorescence) that was inhibited or reduced by superoxide dismutase, the NAD(P)H oxidase inhibitors diphenyleneiodonium and apocynin, or the protein kinase C (PKC) inhibitors chelerythrine and staurosporine or by the angiotensin-converting enzyme (ACE) inhibitor captopril; and 3) increased ACE activity. In organ culture, exposure of isolated arteries of normotensive rats to high pressure (160 mmHg, for 24 hours) significantly increased O2.− production compared to that in arteries exposed to 80 mmHg. High pressure-induced O2.− generation was reduced by inhibitors of ACE and PKC. Incubation of cultured arteries with angiotensin II elicited significantly increased O2.− generation that was inhibited by chelerythrine. Thus, we propose that chronic presence of high pressure itself can elicit arterial oxidative stress, primarily by activating directly a PKC-dependent NAD(P)H oxidase pathway, but also, in part, via activation of the local renin-angiotensin system. PMID:15215177

  5. High-quality Al{sub x}Ga{sub 1{minus}x}N using low temperature-interlayer and its application to UV detector[Ultraviolet

    SciTech Connect

    Iwaya, M.; Terao, S.; Hayashi, N.; Kashima, T.; Detchprohm, T.; Amano, H.; Akasaki, I.; Hirano, A.; Pernot, C.

    2000-07-01

    Low-temperature (LT-) AlN interlayer reduces tensile stress during growth of Al{sub x}Ga{sub 1{minus}x}N, while simultaneously acts as the dislocation filter, especially for dislocations of which Burger's vector contains [0001] components. UV photodetectors using thus-grown high quality Al{sub x}Ga{sub 1{minus}x}N layers were fabricated. The dark current below 50 fA at 10 V bias for 10 {micro}m strip allowing a photocurrent to dark current ratio greater than one even at 40 nW/cm{sup 2} have been achieved.

  6. Effect of Al on High-Temperature Oxidation of CrW Alloys

    SciTech Connect

    . N. Do?an

    2008-02-01

    Abstract The effect of Al on the high temperature oxidation behavior of Cr10 wt.%W alloy was investigated using a cyclical oxidation test at 1,000 C in dry air. First, Al was added into the CrW alloy as an alloying element up to 8 weight percent. Although alloying with Al reduced the spalling, it did not eliminate it. Secondly, Al was applied to the surface using an aluminizing process. Forming an AlCr layer on the CrW alloy reduced oxidation rate significantly and eliminated spalling completely.

  7. Evaluation of the interfacial shear strength and residual stress of TiAlN coating on ZIRLO fuel cladding using a modified shear-lag model approach

    NASA Astrophysics Data System (ADS)

    Liu, Y.; Bhamji, I.; Withers, P. J.; Wolfe, D. E.; Motta, A. T.; Preuss, M.

    2015-11-01

    This paper investigates the residual stresses and interfacial shear strength of a TiAlN coating on Zr-Nb-Sn-Fe alloy (ZIRLO) substrate designed to improve corrosion resistance of fuel cladding used in water-cooled nuclear reactors, both during normal and exceptional conditions, e.g. a loss of coolant event (LOCA). The distribution and maximum value of the interfacial shear strength has been estimated using a modified shear-lag model. The parameters critical to this analysis were determined experimentally. From these input parameters the interfacial shear strength between the TiAlN coating and ZIRLO substrate was inferred to be around 120MPa. It is worth noting that the apparent strength of the coating is high (?3.4GPa). However, this is predominantly due to the large compressive residuals stress (3GPa in compression), which must be overcome for the coating to fail in tension, which happens at a load just 150MPa in excess of this.

  8. High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator

    NASA Astrophysics Data System (ADS)

    Dong, Zhihua; Wang, Jinyan; Wen, C. P.; Gong, Danian; Li, Ying; Yu, Min; Hao, Yilong; Xu, Fujun; Shen, Bo; Wang, Yangyuan

    2010-11-01

    Direct oxidation of composite Ni/Ti metal film structure for AlGaN/GaN MOSHEMT has been successfully demonstrated. In comparison with normal HEMT with Schottky-gate, transistors fabricated with this novel process exhibit three orders of magnitude reduction in gate leakage current, superior breakdown voltage ( V br = 471 V vs. 88 V for normal HEMT) and electrical stability (˜0.3% electric field stress induced drain current degradation versus ˜6% for normal HEMT after 25 V drain bias). The drastic improvement in device performance stability, renders the new process highly promising for GaN based, microwave power amplifier applications in communication and radar systems.

  9. Thermodynamic properties of highly undercooled liquid TiAl alloy

    NASA Astrophysics Data System (ADS)

    Wang, N.; Wei, B.

    2002-05-01

    The specific heat of an undercooled liquid TiAl alloy was measured by an electromagnetic levitation drop calorimeter and the related thermodynamic properties, difference in Gibbs free energy and change in entropy are calculated based on the experimental results and some well known models. Under the containerless processing condition, the liquid alloy was undercooled by up to 219 K (0.122TL). The change in enthalpy shows a linear relationship with the temperature and a nearly constant specific heat was determined even though this alloy was undercooled far below its liquidus temperature. The calculated results of the thermodynamic properties reveal that even though semiquantitative models fit with the experimental curve of the difference in Gibbs free energy well, they lead to different degrees of deviation in the entropy difference calculation.

  10. ALS mutant FUS proteins are recruited into stress granules in induced pluripotent stem cell-derived motoneurons

    PubMed Central

    Lenzi, Jessica; De Santis, Riccardo; de Turris, Valeria; Morlando, Mariangela; Laneve, Pietro; Calvo, Andrea; Caliendo, Virginia; Chi, Adriano; Rosa, Alessandro; Bozzoni, Irene

    2015-01-01

    ABSTRACT Patient-derived induced pluripotent stem cells (iPSCs) provide an opportunity to study human diseases mainly in those cases for which no suitable model systems are available. Here, we have taken advantage of in vitro iPSCs derived from patients affected by amyotrophic lateral sclerosis (ALS) and carrying mutations in the RNA-binding protein FUS to study the cellular behavior of the mutant proteins in the appropriate genetic background. Moreover, the ability to differentiate iPSCs into spinal cord neural cells provides an in vitro model mimicking the physiological conditions. iPSCs were derived from FUSR514S and FUSR521C patient fibroblasts, whereas in the case of the severe FUSP525L mutation, in which fibroblasts were not available, a heterozygous and a homozygous iPSC line were raised by TALEN-directed mutagenesis. We show that aberrant localization and recruitment of FUS into stress granules (SGs) is a prerogative of the FUS mutant proteins and occurs only upon induction of stress in both undifferentiated iPSCs and spinal cord neural cells. Moreover, we show that the incorporation into SGs is proportional to the amount of cytoplasmic FUS, strongly correlating with the cytoplasmic delocalization phenotype of the different mutants. Therefore, the available iPSCs represent a very powerful system for understanding the correlation between FUS mutations, the molecular mechanisms of SG formation and ALS ethiopathogenesis. PMID:26035390

  11. LuAlO{sub 3}: A high density, high speed scintillator for gamma detection

    SciTech Connect

    Moses, W.W.; Derenzo, S.E.; Fyodorov, A.; Korzhik, M.; Gektin, A.; Minkov, B.; Aslanov, V.

    1994-11-01

    We present measurements of the scintillation properties cerium doped lutetium aluminum perovskite, LuAlO{sub 3}:C, new dense ({rho}=8.34 g/cm{sup 3}) inorganic scintillator. This material has a 511 keV interaction length and photoelectric fraction 1.1 cm and 32% respectively, which are well suited to gamma ray detection. In powdered form with 0.5% cerium concentration, the scintillation light output is estimated to be 9,600 photons/MeV of deposited energy, the emission spectrum is a single peak centered at 390 nm, and the fluorescence lifetime is described by the sum of 3 exponential terms, with 60% of the light being emitted with a 11 ns decay time, 26% with a 28 ns decay time, and 13% with a 835 ns decay time. Single crystals contaminated with =10% lutetium aluminum garnet (Lu{sub 3}Al{sub 5}O{sub l2}) have significantly altered scintillation properties. The light output is 26,000 photons/MeV (3.2 times that of BGO), but the decay time increases significantly (1% of the light is emitted with a 10 ns decay time, 15% with a 245 ns decay time, and 85% with a 2010 ns decay time) and the emission spectrum is dominated by a peak centered at 315 nm with a secondary peak centered at 500 rum. The short decay lifetime, high density, and reasonable light output of LuAlO{sub 3}:C (the perovskite phase) suggest that it is useful for applications where high counting rates, good stopping power, good energy resolution, and fast timing are important. However, it is necessary to grow single crystals that are uncontaminated by the garnet phase to realize these properties.

  12. X-ray and optical crystallographic parameters investigations of high frequency induction melted Al-(alpha-Al(2)O(3)) alloys.

    PubMed

    Bourbia, A; Draissia, M; Bedboudi, H; Boulkhessaim, S; Debili, M Y

    2010-01-01

    This article deals with the microstructural strengthening mechanisms of aluminium by means of hard alpha-Al(2)O(3) alumina fine particles. A broad of understanding views covering materials preparations, elaboration process, characterization techniques and associated microstructural characteristic parameters measurements is given. In order to investigate the microstructural characteristic parameters and the mechanical strengthening mechanisms of pure aluminium by hard fine particles, a set of Al-(alpha-Al(2)O(3)) alloys samples were made under vacuum by high fusion temperature melting, the high frequency (HF) process, and rapidly solidified under ambient temperature from a mixture of cold-compacted high-pure fine Al and alpha-Al(2)O(3) powders. The as-solidified Al-(alpha-Al(2)O(3)) alloys were characterized by means of X-ray diffraction (XRD) analyses, optical microscopy observations and Vickers microhardness tests in both brut and heat-treated states. It was found that the as-solidified HF Al-(alpha-Al(2)O(3)) alloys with compositions below 4 wt.% (alpha-Al(2)O(3)) are single-phase microstructures of the solid solution FCC Al phase and over two-phase microstructures of the solid solution FCC Al and the Rhombohedral alpha-Al(2)O(3) phases. The optical micrographs reveal the presence of a grain size refinement in these alloys. Vickers microhardness of the as-solidified Al-(alpha-Al(2)O(3)) is increased by means of pure fine alpha-Al(2)O(3) alumina particles. These combined effects of strengthening and grain size refinement observed in the as-solidified Al-(alpha-Al(2)O(3)) alloys are essentially due to a strengthening of Al by the alpha-Al(2)O(3) alumina particles insertion in the (HF) melted and rapidly solidified alloys. PMID:20495247

  13. Orientation effect on the stress response by strain-rate change at 400 K in Ni{sub 3}Al single crystals

    SciTech Connect

    Demura, M.; Hirano, T.

    1999-07-01

    Cyclic strain-rate change tests were performed by using binary, stoichiometric Ni{sub 3}Al single crystalline specimens with different tensile orientations at 400K. In all the specimens, the flow stress was independent of strain rate in steady state and exhibited a temporary change by the strain-rate change. The characteristics of the temporary stress change, the initial stress change and transient time, were independent of orientation. Based on the multiplication-immobilization model, the authors concluded that the immobilization mechanism, the Kear-Wilsdorf locking mechanism, is independent of orientation in binary, stoichiometric Ni{sub 3}Al.

  14. Preparation of Nb3Al by high-energy ball milling and superconductivity

    NASA Astrophysics Data System (ADS)

    Chen, Yongliang; Liu, Zhao; Li, Pingyuan; Zhang, Xiaolan; Yang, Suhua; Yang, Dawei; Du, Lupeng; Cui, Yajing; Pan, Xifeng; Yan, Guo; Zhao, Yong

    2014-05-01

    The A15 phase superconductor Nb3Al has been considered as an alternative to Nb3Sn for high field and large scale applications. However, to prepare a stoichiometric Nb3Al with fine grain structures is very difficult. High-energy ball milling is a solid state powder processing technique and is a very useful for preparing Nb-Al alloys (Nb3Al). The effects of ball milling time and annealing temperature on the formation of Nb3Al superconducting phase have been studied. Pure Nb and Al powders with stoichiometric ratio of Nb3Al were mixed and milled, and the charging and milling were performed in an inert atmosphere. Phase formation and structural evolution during high-energy ball milling have been examined by X-ray diffraction. Al disappeared and Nb peaks broadened after about one hour of milling. With increasing milling time, the peaks of Nb became considerably broader and intensities decreased, the Nb-Al solid solution phase was extensive when milled about 3 hours. In order to obtain Nb3Al superconducting phase, a subsequent anneal was required. We have annealed the as-milled powders at 800-900C for different times to prepared Nb3Al superconducting alloy. The results indicated that Nb3Al with small amount of impurity phase can be obtained on annealing the Nb-Al solid solution phase and the superconducting transition temperature was about 15K, but it is difficult to obtain a homogeneous Nb3Al phase by annealing the amorphous powder.

  15. Anomalous temperature dependence of flow stress in a Fe{sub 3}Al alloy

    SciTech Connect

    Song, J.H.; Ha, T.K.; Chang, Y.W.

    2000-01-01

    Iron aluminides have attracted much interest since 1930s when the excellent corrosion resistance was noted in alloys with the composition of more than about 18 at.% Al. These alloys have relatively low material cost, due to the reduced usage of strategic elements like Cr, Mo and Ni, and a lower density than stainless steels. Their tensile strength is also comparable to those of ferritic and austenitic steels. These advantages have led the iron aluminide alloys being considered for many applications in industries needing sulfidation and oxidation resistance (1). However, the poor ductility at ambient temperatures and an abrupt drop in strength above 600 C have limited these alloys for structural applications. In the past years, extensive efforts have been devoted to understanding and improving the metallurgical properties of iron aluminides with the aim of producing more strong, ductile, and corrosion-resistant materials for structural applications. These studies have resulted in significant contributions to the understanding of the fabrication and mechanical properties of iron aluminides. Deformation behavior in iron aluminides is now known to depend on composition, temperature, and the presence or absence of ordered structures. Recent studies have demonstrated that improved engineering ductility of 10--15% can be achieved in wrought Fe{sub 3}Al-based iron aluminide alloys, through the control of composition and microstructure. The effect of strain rate on the deformation behavior of Fe{sub 3}Al alloys, especially on the anomalous temperature dependence of strength is of interest recently and more systematic investigation is now necessitated. Load relaxation test has been generally regarded as a very effective technique to measure the strain rate sensitivity over a wider range of strain rates with very little microstructural changes and has been applied to the plasticity of various rate-sensitive materials. In the present study, the iron aluminide alloys with 27.6 at.% Al having the various single-phase field, i.e. the disordered solid solution ({alpha}), an Fe{sub 3}Al with an imperfectly ordered B2 structure, and an ordered Fe{sub 3}Al with the D0{sub 3} structure were first prepared. A series of load relaxation tests was then carried out at the various temperatures ranging from 300 to 800 C to investigate the effect of the tensile strain rate on the anomalous flow behavior.

  16. Properties of high-temperature alloys of the system Ni-Al-Nb with a unidirectional eutectic structure

    SciTech Connect

    Toropov, V.M.; Bondarenko, IU.A.

    1985-03-01

    The effects of directional solidification with eutectic crystallization of the gamma- and delta-phases of the ternary alloy Ni-Al-Nb were examined in an attempt to provide better ductility and high temperature oxidation resistance. Specimens of the system examined, Ni-Ni3Al-Ni3Nb, were studied for the variations in the microstructural characteristics in response to variation in the chemical compositions. The Bridgman method was used to effect directional solidification. A unidirectional structure composed of alternating gamma- and delta-phases was observed in specimens with 21-23 percent Nb and 2.0-2.5 percent Al directionally solidified in thermal gradients of 70-80 deg/cm and at a crystallization rate of 0.3-0.4 mm/min. Stress cracking tests of the unidirectional materials yielded a time to failure of 14-24 hr at 1100 C with a 120 MPa stress. The time to failure was extended to 69-81 hr by adding 2-4 percent Cr. 8 references.

  17. Stress Management Model for the Elementary/Middle/High School.

    ERIC Educational Resources Information Center

    Matthews, Doris B.

    The Matthews Stress Management formula is a stress management model for use in schools. This effective, practical, and inexpensive model entails the awareness of the physiology of stress, perception of tangible bases of motivation for children, appropriate and simplified techniques, applicability to other areas, and full recognition of the

  18. High damping Al-Fe-Mo-Si/Zn-Al composites produced by rapidly solidified powder metallurgy process

    SciTech Connect

    Li, P.Y.; Dai, S.L.; Chai, S.C.; Li, Y.R.

    2000-05-10

    The metallic materials commonly used in aircraft and aerospace fields, such as aluminum and titanium alloys, steels, etc., show extremely low damping capacity (usually of the order of or less than 10{sup {minus}3}). Thus, some problems related to vibration may emerge and influence the reliability, safety and life of airplanes, satellites, etc. It has been reported that almost two thirds of errors for rockets and satellites are related to vibration and noise. One effective way to solve these vibration-related problems is to adopt high damping metallic materials. Conventional high damping alloys exhibit damping capacity above 10{sup {minus}2}, however, their densities are usually great than 5 x 10{sup 3} kg m{sup {minus}3}, or their strengths are less than 200 MPa (for alloys based on dislocation damping), making them impossible to be applied to aircraft and aerospace areas. Recently, some low-density high-damping metal/metal composites based on aluminum and high damping alloys have been developed in Beijing Institute of Aeronautical Materials (BIAM) by the rapidly solidified power metallurgy process. This paper aims to report the properties of the composites based on a high temperature Al-Fe-Mo-Si alloy and a high damping Zn-Al alloy, and compare them with that of 2618-T61 alloy produced by the ingot metallurgy process.

  19. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    SciTech Connect

    Moreira, Milena A.; Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  20. Development of a high-performance TiAl exhaust valve

    SciTech Connect

    Maki, Kunio; Ehira, Atsushi; Sayashi, Mamoru; Sasaki, Toru; Noda, Toshiharu; Okabe, Michio; Isobe, Susumu

    1996-09-01

    A new high-performance and lightweight TiAl intermetallic compound exhaust valve has been developed. The TiAl valve can improve power output and fuel economy by contributing higher engine speeds and a reduction in valve train friction. It was achieved by developing A Ti-33.5Al-0.5Si-1Nb-0.5Cr (mass %) intermetallic compound, a precision casting method for TiAl that provides a low-cost, high-quality process, and a plasma carburizing technique for assuring good wear resistance on the valve stem end, stem and face.

  1. Stress distribution in a transversely loaded cross-shaped single fiber SCS-6/Ti-6Al-4V composite

    SciTech Connect

    Warrier, S.G.; Gundel, D.B.; Majumdar, B.S.; Miracle, D.B.

    1996-01-15

    In most structural applications utilizing fiber reinforced metal matrix composites (MMCs), the mechanical response normal to the fiber direction has to be considered. The transverse response is very sensitive to the interface bond strength, which has commonly been determined by testing straight-sided 90{degree} specimens and interpreting debond initiation from the knee in the stress-strain curve as well as from a sudden drop in the Poisson`s ratio. In an attempt to modify the debond initiation site to an internal location free of uncharacteristic states of stress, a cross-shaped specimen has been developed. Experiments conducted by Gundel et al. indicated that this geometry was successful in obtaining the appropriate crack initiation site. In the present study, finite element analysis (FEA) was done on the cross-shaped specimen to obtain the stress distribution in the composite under transverse loading, in an effort to corroborate the success of this geometry in determining the true transverse response of the composite.

  2. Comparison Between Nb3Al and Nb3Sn Strands and Cables for High Field Accelerator Magnets

    SciTech Connect

    Yamada, R.; Kikuchi, A.; Barzi, E.; Chlachidze, G.; Rusy, A.; Takeuchi, T.; Tartaglia, M.; Turrioni, D.; Velev, V.; Wake, M.; Zlobin, A.V.

    2010-01-01

    The Nb{sub 3}Al small racetrack magnet, SR07, has been successfully built and tested to its short sample limit beyond 10 Tesla without any training. Thus the practical application of Nb{sub 3}Al strands for high field accelerator magnets is established. The characteristics of the representative F4 strand and cable, are compared with the typical Nb{sub 3}Sn strand and cable. It is represented by the OST high current RRP Nb{sub 3}Sn strand with 108/127 configuration. The effects of Rutherford cabling to both type strands are explained and the inherent problem of the Nb{sub 3}Sn strand is discussed. Also the test results of two representative small racetrack magnets are compared from the stand point of Ic values, and training. The maximum current density of the Nb{sub 3}Al strands is still smaller than that of the Nb{sub 3}Sn strands, but if we take into account of the stress-strain characteristics, Nb{sub 3}Al strands become somewhat favorable in some applications.

  3. In situ Formed α-Al2O3 Nanocrystals Repaired the Preexisting Microcracks in Plasma-Sprayed Al2O3 Coating via Stress-Induced Phase Transformation

    NASA Astrophysics Data System (ADS)

    Yang, Kai; Feng, Jingwei; Rong, Jian; Liu, Chenguang; Tao, Shunyan; Ding, Chuanxian

    2016-02-01

    In the present study, the phase composition and generation mechanism of the nanocrystals located in the microcracks of plasma-sprayed Al2O3 coating were reevaluated. The Al2O3 coatings were investigated using transmission electron microscopy and x-ray diffraction. We supply the detailed explanations to support the new viewpoint that in situ formation of α-Al2O3 nanocrystals in the preexisting microcracks of the as-sprayed Al2O3 coating may be due to the stress-induced phase transformation. Owing to the partially coherent relationship, the phase interfaces between the α-Al2O3 nanocrystals with the preferred orientation and the γ-Al2O3 matrix may possess better bonding strength. The α-Al2O3 nanocrystals could repair the microcracks in the coating, which further strengthens grain boundaries. Grain boundary strengthening is beneficial to the coating fracture toughness enhancement.

  4. The Voices of High School Counselors: Lived Experience of Job Stress

    ERIC Educational Resources Information Center

    Falls, Leigh; Nichter, Mary

    2007-01-01

    There is a paucity of literature addressing high school counselors' experiences of job stress. Our qualitative phenomenological study adds to the professions' knowledge of job stress as experienced by counselors in large suburban high schools. Our study illustrates the job stress phenomenon in the counselors' own voices, identifies situations

  5. Improvement in electrical characteristics of high-k Al2O3 gate dielectric by field-assisted nitric oxidation

    NASA Astrophysics Data System (ADS)

    Chuang, Kai-Chieh; Hwu, Jenn-Gwo

    2006-12-01

    The authors perform a simple technique for the improvements in both current density reliability of high-k Al2O3 gate dielectrics. An Al2O3 was prepared by chemical oxidation at an appropriate electrical field in nitric acid at room temperature then furnace annealed at 650C in N2. The interface trap-induced capacitance was used to investigate the interfacial property between the gate dielectric Si substrate. On the other hand the stress induced leakage current (SILC) was measured for characterizing the property of bulk oxide. It was found that the electrical characteristics of bulk oxide including leakage breakdown field SILC, were much improved without sacrificing interfacial property. The improvement can be ascribed to the compensation oxidation process.

  6. Evaluation of high-strength Cu-Ni-Mn-Al bolting used in oil and gas service

    SciTech Connect

    Andersen, O.; Joosten, M.W.; Murali, J.; Milliams, D.E.

    1996-08-01

    High strength bolts, nuts, studs and screws manufactured from a precipitation hardening Cu-Ni-Mn-Al alloy have experienced several failures in recent years in oilfield installations with varying degrees of severity and consequence. Such failures have been broadly attributed to Stress Corrosion Cracking (SCC) and Liquid Metal Embrittlement (LME) phenomena. A detailed test program using the Slow Strain Rate Testing (SSRT) method has been conducted to identify the various parameters which could contribute to SCC. Results indicate that the Cu-Ni-Mn-Al alloy is susceptible to SCC in a variety of environments commonly found in oilfield equipment manufacturing and field installations such as amine-containing additives, sulfides and even natural seawater at elevated temperatures. SSRT testing indicated, however, that, in seawater environments, low service temperatures and cathodic protection did not adversely affect the alloy`s performance. Discussion of test program results and qualitative correlations with field failures are presented.

  7. Neutron diffraction measurement of the internal stresses following heat treatment of a plastically deformed Al/SiC particulate metal-matrix composite

    SciTech Connect

    Dutta, M.; Bruno, G.; Edwards, L.; Fitzpatrick, M.E

    2004-08-02

    The generation of internal misfit stresses between matrix and reinforcement has been studied in an Al/SiC particulate-reinforced metal-matrix composite. Bars of the composite were deformed in bending to introduce a varying residual stress field, and subsequently heat treated at different temperatures and for different times to study the evolution of the macroscopic stress field and the interphase stresses. The results show that the shape misfit stresses between the matrix and reinforcement, which arise from the difference in thermal expansion coefficient between the two phases, are reduced by the plastic deformation, but is re-generated by heat treatment. Higher temperatures and longer times increase the degree to which the shape misfit stresses return to their initial values. The re-generation of the shape misfit stresses is accompanied by a reduction in the variation of the macrostress field induced by the plastic bend.

  8. Investigation of the biaxial stress of Al-doped ZnO thin films on a flexible substrate with RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Huang, Kuo-Ting; Chen, Hsi-Chao; Cheng, Po-Wei; Chang, Jhe-Ming

    2016-01-01

    Transparent conductive Al-doped ZnO (AZO) thin films were deposited onto poly(ethylene terephthalate) (PET) substrate, using the radio frequency (RF) magnetron sputtering method. The residual stress of flexible electronics was investigated by a double beam shadow moiré interferometer with phase shifting interferometry (PSI). Moreover, the biaxial stress of AZO thin films can be graphically represented by using Mohr’s circle of stress. The residual stress of AZO thin films becomes more compressive with the increase in sputtering power. The maximum residual stress is ‑1115.74 MPa, and the shearing stress is 490.57 MPa at a sputtering power of 200 W. The trends of residual stress were evidenced by the X-ray diffraction (XRD) patterns and optical properties of AZO thin films. According to the evaluation results of the refractive index and the extinction coefficient, the AZO thin films have better quality when the sputtering power less than 100 W.

  9. Relationships among Stress, Coping, and Mental Health in High-Achieving High School Students

    ERIC Educational Resources Information Center

    Suldo, Shannon M.; Shaunessy, Elizabeth; Hardesty, Robin

    2008-01-01

    This study investigates the relationships among stress, coping, and mental health in 139 students participating in an International Baccalaureate (IB) high school diploma program. Mental health was assessed using both positive indicators (life satisfaction, academic achievement, academic self-efficacy) and negative indicators (psychopathology) of

  10. The effect of residual stress on the fatigue crack growth behavior of Al-Si-Mg cast alloysMechanisms and corrective mathematical models

    NASA Astrophysics Data System (ADS)

    Lados, Diana A.; Apelian, Diran

    2006-01-01

    The fatigue crack growth (FCG) behavior of various types of alloys is significantly affected by the presence of residual stress induced by manufacturing and post-manufacturing processes. There is a qualitative understanding of the effects of residual stress on fatigue behavior, but the effects are not comprehensively quantified or accounted for. The difficulty in quantifying these effects is largely due to the complexity of residual-stress measurements (especially considering that parts produced in similar conditions can have different residual-stress levels) and the lack of mathematical models able to convert experimental data with residual stress into residual-stress-free data. This article provides experimental, testing, and mathematical techniques to account for residual-stress effects on crack growth rate data, together with two methods for eliminating residual stresses in crack growth test specimens. Fracture-mechanics concepts are used to calculate, in simple and convenient ways, stress-intensity factors caused by residual stresses. The method is advantageous, considering that stress-intensity factors are determined before the actual test is conducted. Further on, residual-stress-intensity factors are used to predict the residual-stress distribution in compact tension (CT) specimens prior to testing. Five cast Al-Si-Mg alloys with three Si levels (in unmodified (UM) as well as Sr-modified (M) conditions) were analyzed both with and without residual stress. Fatigue cracks are grown under both constant stress ratio, R=0.1, and constant maximum stress-intensity factor, K max = const., conditions. The mechanisms involved in crack growth through residual-stress fields are presented.

  11. Effect of Zn Content on the Microstructure and Properties of Super-High Strength Al-Zn-Mg-Cu Alloys

    NASA Astrophysics Data System (ADS)

    Chen, Ziyong; Mo, Yuanke; Nie, Zuoren

    2013-08-01

    The microstructure and properties of three different Al-Zn-Mg-Cu alloys with high Zn content (9 wt pct, 10 wt pct, and 11 wt pct, marked as 9Zn, 10Zn, and 11Zn, respectively) were investigated. The strength of alloys increases as the Zn content increases from 9 wt pct to 10 wt pct, while it does not increase any more as the Zn content increases continuously from 10 wt pct to 11 wt pct. The stress-corrosion cracking (SCC) resistance decreases as the Zn content increases from 9 wt pct to 10 wt pct, while it changes unobviously as the Zn content increases continuously from 10 wt pct to 11 wt pct. The elongation and fracture toughness of alloys decrease as the Zn content increases in these Al-Zn-Mg-Cu alloys. The Zn content has little effect on the precipitation reaction of Al-Zn-Mg-Cu alloys that contain the mixture of GP zones, and ?' are the main Matrix Precipitates (MPt) in the peak-aging state, and the mixture of ?' and ? are the main MPt in the over-aging state. The amount of MPt and coarse T (AlZnMgCu) phases are shown to increase with the increasing Zn content in Al-Zn-Mg-Cu alloys. The coarse T phases hardly dissolve into the matrix and are the source for the crack initiation, which may be the responsibility for the negative effect on the properties of high Zn content Al-Zn-Mg-Cu alloys.

  12. The influence of growth rate and temperature on high cycle fatigue of Al-Al3Ni

    NASA Technical Reports Server (NTRS)

    Maurer, G. E.; Duquette, D. J.; Stoloff, N. S.

    1976-01-01

    High-cycle fatigue tests have been conducted on specimens of an Al-Al3Ni eutectic alloy, unidirectionally solidified at selected rates from 0.000139 to 0.3 cm/sec. Tests were conducted in air at 298, 458 and 683 K. Room temperature fatigue lives were independent of growth rate at low solidification rates but were markedly improved in samples grown at 0.3 cm/sec. Materials grown at 0.00833 cm/sec exhibited fatigue lives similar to those of the lower growth rates, despite gross misalignment due to cellular growth. The dependence of fatigue life on growth rate at elevated temperatures appears to be due primarily to differences in cyclic creep rates as a result of varying interfiber spacings. Crack initiation and propagation mechanisms were established by metallographic and fractographic examination. Dislocation substructure-fiber interactions were studied by transmission electron microscopy.

  13. Development and High Temperature Property Evaluation of Ni-Co-Cr-Al Composite Electroforms

    NASA Astrophysics Data System (ADS)

    Srivastava, Meenu; Siju; Balaraju, J. N.; Ravisankar, B.

    2015-05-01

    Ni-Co-Cr-Al composite electroforms were developed with cobalt content of 10 and 40 wt.%. Cr and Al nano-particles were suspended in sulphamate electrolyte and co-deposited in the Ni-Co matrices. The surface morphology was investigated using field emission scanning electron microscope and the composition analyzed by energy-dispersive x-ray analysis. The oxidation resistance of the electroforms was studied from 600 to 1000 °C. The weight gain of Ni-10 wt.%Co-Cr-Al was less (better oxidation resistance) compared to Ni-Cr-Al and Ni-40 wt.%Co-Cr-Al. The x-ray diffraction studies revealed that the oxidation product formed on the surface of Ni-Cr-Al and Ni-10 wt.%Co-Cr-Al consisted of NiO and Al2O3, while Ni-40 wt.%Co-Cr-Al comprised oxides such as NiCo2O4, CrO3, CoO, NiO, and Al2O3. The hot corrosion behavior was investigated in 75%Na2SO4 + 25%NaCl environment at 800 °C. It was found that the hot corrosion resistance of the composite coating improved with increase in cobalt content. The probable composition suitable for high-temperature applications was found to be Ni-10 wt.%Co-Cr-Al.

  14. Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

    SciTech Connect

    Zhu, Jie-Jie; Ma, Xiao-Hua Hou, Bin; Chen, Wei-Wei; Hao, Yue; School of Microelectronics, Xidian University, Xi'an 710071

    2014-03-15

    Trap states in Al{sub 0.55}Ga{sub 0.45}N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al{sub 2}O{sub 3}/Al{sub 0.55}Ga{sub 0.45}N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10{sup 13} eV{sup −1}·cm{sup −2}. Al{sub 2}O{sub 3} gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs.

  15. High threshold for induction of the stress response in motor neurons is associated with failure to activate HSF1.

    PubMed

    Batulan, Zarah; Shinder, Gayle A; Minotti, Sandra; He, Bei Ping; Doroudchi, Mohammad M; Nalbantoglu, Josephine; Strong, Michael J; Durham, Heather D

    2003-07-01

    Heat shock protein 70 (Hsp70) protects cultured motor neurons from the toxic effects of mutations in Cu/Zn-superoxide dismutase (SOD-1), which is responsible for a familial form of the disease, amyotrophic lateral sclerosis (ALS). Here, the endogenous heat shock response of motor neurons was investigated to determine whether a high threshold for activating this protective mechanism contributes to their vulnerability to stresses associated with ALS. When heat shocked, cultured motor neurons failed to express Hsp70 or transactivate a green fluorescent protein reporter gene driven by the Hsp70 promoter, although Hsp70 was induced in glial cells. No increase in Hsp70 occurred in motor neurons after exposure to excitotoxic glutamate or expression of mutant SOD-1 with a glycine--> alanine substitution at residue 93 (G93A), nor was Hsp70 increased in spinal cords of G93A SOD-1 transgenic mice or sporadic or familial ALS patients. In contrast, strong Hsp70 induction occurred in motor neurons with expression of a constitutively active form of heat shock transcription factor (HSF)-1 or when proteasome activity was sufficiently inhibited to induce accumulation of an alternative transcription factor HSF2. These results indicate that the high threshold for induction of the stress response in motor neurons stems from an impaired ability to activate the main heat shock-stress sensor, HSF1. PMID:12843283

  16. AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE

    NASA Astrophysics Data System (ADS)

    Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

    2015-03-01

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

  17. High-Temperature Electromechanical Characterization of AlN Single Crystals.

    PubMed

    Kim, Taeyang; Kim, Jinwook; Dalmau, Rafael; Schlesser, Raoul; Preble, Edward; Jiang, Xiaoning

    2015-10-01

    Hexagonal AlN is a non-ferroelectric material and does not have any phase transition up to its melting point (>2000C), which indicates the potential use of AlN for high-temperature sensing. In this work, the elastic, dielectric, and piezoelectric constants of AlN single crystals were investigated at elevated temperatures up to 1000C by the resonance method. We used resonators of five different modes to obtain a complete set of material constants of AlN single crystals. The electrical resistivity of AlN at elevated temperature (1000C) was found to be greater than 5 10(10) ? cm. The resonance frequency of the resonators, which was mainly determined by the elastic compliances, decreased linearly with increasing temperature, and was characterized by a relatively low temperature coefficient of frequency, in the range of -20 to -36 ppm/C. For all the investigated resonator modes, the elastic constants and the electromechanical coupling factors exhibited excellent temperature stability, with small variations over the full temperature range, <11.2% and <17%, respectively. Of particular significance is that due to the pyroelectricity of AlN, both the dielectric and the piezoelectric constants had high thermal resistivity even at extreme high temperature (1000C). Therefore, high electrical resistivity, temperature independence of electromechanical properties, as well as high thermal resistivity of the elastic, dielectric, and piezoelectric properties, suggest that AlN single crystals are a promising candidate for high-temperature piezoelectric sensing applications. PMID:26759848

  18. Static and kinetic friction of granite at high normal stress

    USGS Publications Warehouse

    Byerlee, J.D.

    1970-01-01

    Frictional sliding on ground surfaces of granite, angle of sliding planes 30?? and 45??, was investigated as a function of confining pressure. Over the normal stress range of 2-12 kb, the static frictional shear stress ??s follows the relationship ??s = 0??5 + 0?? ??n and the kinetic frictional shear stress ??k was calculated to be ??k = 0??25 + 0??47 ??n. ?? 1970.

  19. Observation of high viscous stress of oriented polyolefin under uniaxial tensile

    NASA Astrophysics Data System (ADS)

    Fu, Qiang; Na, Bing; Zou, Hao; Wang, Ke; Zhang, Qin; Han, Charles C.

    2006-03-01

    In this work, by means of stress relaxation experiments, the viscous stress at various strains during tensile deformation of oriented polyolefin samples, including high density polyethylene (HDPE), linear low density polyethylene (LLDPE) and isotactic polypropylene (iPP), has been determined. The viscous stress in the oriented samples takes up to 50 -70% of the total stress, which is unusually high, compared with their isotropic counterparts. More over, the enhanced modulus of oriented polyolefin was found not mainly caused by the existence of shish-kebab structure, but mainly come from the contribution of viscous stress. The result is new and provides deep understanding of the origin of high modulus for oriented polymers.

  20. High-Temperature Oxidation Behavior of Al-Co-Cr-Ni-(Fe or Si) Multicomponent High-Entropy Alloys

    NASA Astrophysics Data System (ADS)

    Butler, T. M.; Alfano, J. P.; Martens, R. L.; Weaver, M. L.

    2015-01-01

    High-entropy alloys (HEAs) are a class of alloys that are being considered for a number of applications. In the present study, the microstructures and 1050°C oxidation behaviors of two HEAs, Al10Cr22.5Co22.5Ni22.5Fe22.5 (at.%) and Al20Cr25Co25Ni25Si5 have been investigated along with Al15Cr10Co35Ni35Si5, which is a high-temperature shape-memory alloy. Oxide formation occurred via selective oxidation in a manner that was consistent with the oxide formation model devised by Giggins and Pettit for model Ni-Cr-Al alloys. The lower Al content alloy formed an external Cr2O3 scale and an internal subscale consisting of Al2O3 and AlN precipitates. The higher Al content alloys exhibited smaller mass gains and formed external Al2O3 scales without any internal oxidation of the alloys.

  1. High Rate Deposition of High Quality ZnO:Al by Filtered Cathodic Arc

    SciTech Connect

    Mendelsberg, Rueben J.; Lim, S.H.N.; Milliron, D.J.; Anders, Andre

    2010-11-18

    High quality ZnO:Al (AZO) thin films were prepared on glass substrates by direct current filtered cathodic arc deposition. Substrate temperature was varied from room temperature to 425oC, and samples were grown with and without the assistance of low power oxygen plasma (75W). For each growth condition, at least 3 samples were grown to give a statistical look at the effect of the growth environment on the film properties and to explore the reproducibility of the technique. Growth rate was in the 100-400 nm/min range but was apparently random and could not be easily traced to the growth conditions explored. For optimized growth conditions, 300-600 nm AZO films had resistivities of 3-6 x 10-4 ?Omega cm, carrier concentrations in the range of 2-4 x 1020 cm3, Hall mobility as high as 55 cm2/Vs, and optical transmittance greater than 90percent. These films are also highly oriented with the c-axis perpendicular to the substrate and a surface roughness of 2-4 nm.

  2. Nucleation Enhancement of Al Alloys by High Intensity Ultrasound

    NASA Astrophysics Data System (ADS)

    Youn, Jeong Il; Jig Kim, Young

    2009-07-01

    The utilization of ultrasound is expected to be applied to many casting process because of the high efficiency of ultrasound energy. The present study attempts to evaluate the effect of ultrasound energy on microstructure of castings, and high intensity ultrasound was injected into A356 and A390 alloy melt for refinement of primary phase without adding a chemical refiner. The microstructure refinement, especially primary alpha phase, could not be achieved in A356 alloy with simply ultrasound injection into alloy melt, although ultrasound was injected for 20 min. However, the influence of ultrasound on the microstructure in A390 alloy is very clear. Primary silicon of A390 alloy with ultrasound injection into melt was very small and dispersed uniformly in alloy matrix. In addition, the primary Si size was decreased with an increase the ultrasound injection time from 82 to 8 m. As compared with A356 alloy, however, A390 alloy shows the nucleation enhancement by ultrasound vibration of melt only. The reason that there is a difference of the refinement of primary phase between A356 and A390 alloy could be explained by solute cluster theory.

  3. The comparison of perceived stress in idiopathic thrombocytopenic purpura patients referred to Seyed Al-Shohada Hospital with healthy people in Isfahan, Iran, 2013

    PubMed Central

    Hemati, Zeinab; Kiani, Davood

    2015-01-01

    Background: Mental stress and daily crises comprise a part of physical and mental threats. Perceived stress is a physical and mental threat, as well. Perceived stress is a psychological process during which the individual considers his/ her physical and psychological welfare as being threatened. Since idiopathic thrombocytopenic purpura (ITP) is one of the chronic diseases being able to affect patients' perceived stress, this study was conducted to compare perceived stress in ITP patients and healthy people. Materials and Methods: This is a descriptive-comparative study with control and case groups. In this study, 64 ITP patients referring Seyed Al-Shohada Hospital and the same number of healthy individuals from the patients' neighborhood, as the control group, were selected randomly and compared. The Kohen Perceived Stress Standard Questionnaire was used to collect the data. The data were analyzed by SPSS and Students independent t-test, chi-square, and Mann-Whitney test. Results : 64.1%, 59.4% and 53.1% of participants in case group were older than 35 years old, female and had elementary education. 78.1% of case group had severe perceived stress. 70.3% of participants in control group experienced mild perceived stress. Mann-Whitney test showed significant difference between two groups in level of stress (p<0.001). Conclusion: In ITP patients, perceived stress was considerable. Planning interventional measures to determine stress-making agents and subside or at least control them is very essential. PMID:25922646

  4. Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress

    SciTech Connect

    Wu, Y. Alamo, J. A. del; Chen, C.-Y.

    2015-01-14

    We have stressed AlGaN/GaN HEMTs (High Electron Mobility Transistors) under high-power and high-temperature DC conditions that resulted in various levels of device degradation. Following electrical stress, we conducted a well-established three-step wet etching process to remove passivation, gate and ohmic contacts so that the device surface can be examined by SEM and AFM. We have found prominent pits and trenches that have formed under the gate edge on the drain side of the device. The width and depth of the pits under the gate edge correlate with the degree of drain current degradation. In addition, we also found visible erosion under the full extent of the gate. The depth of the eroded region averaged along the gate width under the gate correlated with channel resistance degradation. Both electrical and structural analysis results indicate that device degradation under high-power DC conditions is of a similar nature as in better understood high-voltage OFF-state conditions. The recognition of a unified degradation mechanism provides impetus to the development of a degradation model with lifetime predictive capabilities for a broad range of operating conditions spanning from OFF-state to ON-state.

  5. Interfacial Characterization of Dissimilar Joints Between Al/Mg/Al-Trilayered Clad Sheet to High-Strength Low-Alloy Steel

    NASA Astrophysics Data System (ADS)

    Macwan, A.; Jiang, X. Q.; Chen, D. L.

    2015-07-01

    Magnesium (Mg) alloys are increasingly used in the automotive and aerospace sectors to reduce vehicle weight. Al/Mg/Al tri-layered clad sheets are deemed as a promising alternative to improve the corrosion resistance and formability of Mg alloys. The structural application of Al/Mg/Al tri-layered clad sheets inevitably involves welding and joining in the multi-material vehicle body manufacturing. This study aimed to characterize the bonding interface microstructure of the Al/Mg/Al-clad sheet to high-strength low-alloy steel with and without Zn coating using ultrasonic spot welding at different levels of welding energy. It was observed that the presence of Zn coating improved the bonding at the interface due to the formation of Al-Zn eutectic structure via enhanced diffusion. At a higher level of welding energy, characteristic flow patterns of Zn into Al-clad layer were observed with an extensive penetration mainly along some high angle grain boundaries. The dissimilar joints without Zn coating made at a high welding energy of 800 J failed partially from the Al/Fe weld interface and partially from the Al/Mg clad interface, while the joints with Zn coating failed from the Al/Mg clad interface due to the presence of brittle Al12Mg17 phase.

  6. Residual Stresses in Ta, Mo, Al and Pd Thin Films Deposited by E-Beam Evaporation Process on Si and Si/SiO2 Substrates

    SciTech Connect

    Guisbiers, G.; Overschelde, O. van; Wautelet, M.; Strehle, S.

    2006-02-07

    Residual stresses are commonly generated during the deposition process of thin films and can influence the reliability of the deposited systems e.g. due to fatigue, aging effects or debonding. Therefore, an evaluation of such stresses in thin films is of crucial importance for metallization of microelectronic devices and MEMS. Residual stresses can be determined experimentally by substrate curvature or X-ray diffraction measurements. The modeling of residual stresses generally deals with the calculation of the thermal ones alone. In the present work, a model is proposed, where intrinsic stresses are calculated explicitly based on the Tsui-Clyne model. The aim of this model, called self-consistent model, is to predict residual stresses in thin films independent on measurements. The simulated values are compared with experimental results for the following systems: Ta/Si, Mo/Si, Al/SiO2/Si and Pd/SiO2/Si.

  7. Al/C/MnO2 sandwich nanowalls with highly porous surface for electrochemical energy storage

    NASA Astrophysics Data System (ADS)

    He, Shuijian; Zhang, Ruizhong; Zhang, Chunmei; Liu, Minmin; Gao, Xiaohui; Ju, Jian; Li, Lei; Chen, Wei

    2015-12-01

    Hierarchical materials supported on metal substrates present promising applications in flexible energy storage and conversion devices. Compared to Au, Ag, Cu, Ni, Ti, W and their alloys, Al, the most abundant metal in the crust has been less used in supercapacitors due to its high activity which makes it unstable in acid and base electrolytes. In this paper, we explore a novel Al/C/MnO2 sandwich structured material for the first time for supercapacitor. Owing to the highly porous and open surface structure and the highly conductive Al/C double core current collector on nanoscale, the Al/C/MnO2 sandwich nanowall arrays supported on Al foil show excellent capacitance performance with a maximum area specific capacitance of 1008.3 mF cm-2 and a high energy density of 35.2 μWh cm-2 at 2 mA cm-2. Moreover, a supercapacitor device with 4 supercapacitors connected in series can power a LED lamp. The present study demonstrates a novel electrode architecture based on Al foil with remarkably high area specific capacitance and stability for promising supercapacitor applications. Our strategy provides a new approach to the fabrication of hierarchical electrode materials from Al metal (could also be extend to other metal substrates) for supercapacitors and other energy storage and conversion devices.

  8. Highly transparent and conductive ZnO:Al thin films prepared by vacuum arc plasma evaporation

    NASA Astrophysics Data System (ADS)

    Miyata, Toshihiro; Minamino, Youhei; Ida, Satoshi; Minami, Tadatsugu

    2004-07-01

    A vacuum arc plasma evaporation (VAPE) method using both oxide fragments and gas sources as the source materials is demonstrated to be very effective for the preparation of multicomponent oxide thin films. Highly transparent and conductive Al-doped ZnO (AZO) thin films were prepared by the VAPE method using a ZnO fragment target and a gas source Al dopant, aluminum acethylacetonate (Al(C5H7O2)3) contained in a stainless steel vessel. The Al content in the AZO films was altered by controlling the partial pressure (or flow rate) of the Al dopant gas. High deposition rates as well as uniform distributions of resistivity and thickness on the substrate surface were obtained on large area glass substrates. A low resistivity on the order of 10-4 ? cm and an average transmittance above 80% in the visible range were obtained in AZO thin films deposited on glass substrates. .

  9. Stress Factors and Their Alleviation in Parents of High Risk Pre-Term Infants.

    ERIC Educational Resources Information Center

    Lowenthal, Barbara

    1987-01-01

    The article differentiates parental stress experienced after the birth of a high-risk premature infant from the normal stress of transition to parenthood. A review of the literature delineates a conceptual framework for relating preterm at-risk birth to specific parental stress reactions, and proposes strategies for alleviating these

  10. Microstructure Characterization and Stress Corrosion Evaluation of Autogenous and Hybrid Friction Stir Welded Al-Cu-Li 2195 Alloy

    NASA Technical Reports Server (NTRS)

    Li, Zhixian; Arbegast, William J.; Meletis, Efstathios I.

    1997-01-01

    Friction stir welding process is being evaluated for application on the Al-Cu-Li 2195 Super-Light Weight External Tank of the Space Transportation System. In the present investigation Al-Cu-Li 2195 plates were joined by autogenous friction stir welding (FSW) and hybrid FSW (friction stir welding over existing variable polarity plasma arc weld). Optical microscopy and transmission electron microscopy (TEM) were utilized to characterize microstructures of the weldments processed by both welding methods. TEM observations of autogenous FSW coupons in the center section of the dynamically-recrystallized zone showed an equiaxed recrystallized microstructure with an average grain size of approx. 3.8 microns. No T(sub 1), precipitates were present in the above-mentioned zone. Instead, T(sub B) and alpha precipitates were found in this zone with a lower population. Alternate immersion, anodic polarization, constant load, and slow strain tests were carried out to evaluate the general corrosion and stress-corrosion properties of autogenous and hybrid FSW prepared coupons. The experimental results will be discussed.

  11. A high content screen identifies novel compounds that inhibit stress-induced TDP-43 cellular aggregation and associated cytotoxicity

    PubMed Central

    Zauur, Nava; Liu, Min; Concannon, John; Ebata, Atsushi; Wolozin, Benjamin; Glicksman, Marcie A.

    2014-01-01

    TDP-43 is an RNA binding protein found to accumulate in the cytoplasm of brain and spinal cord from patients affected with amyotrophic lateral sclerosis (ALS) and frontotemporal lobar degeneration (FTLD). Nuclear TDP-43 protein regulates transcription through several mechanisms, and under stressed conditions it forms cytoplasmic aggregates that co-localize with stress granule (SG) proteins in cell culture. These granules are also found in the brain and spinal cord of patients affected with ALS and FTLD. The mechanism through which TDP-43 might contribute to neurodegenerative diseases is poorly understood. In order to investigate the pathophysiology of TDP-43 aggregation and to isolate potential therapeutic targets, we screened a chemical library of 75,000 compounds using high content analysis with PC12 cells that inducibly express human TDP-43 tagged with GFP. The screen identified 16 compounds that dose-dependently decreased the TDP-43 inclusions without significant cellular toxicity or changes in total TDP-43 expression levels. To validate the effect of the compounds, we tested compounds by Western Blot analysis and in a model that replicates some of the relevant disease phenotypes. The hits from this assay will be useful for elucidating regulation of TDP-43, stress granule response, and possible ALS therapeutics. PMID:24019256

  12. High-resolution electron microscope observation of interface microstructure of a cast Al-Mg-Si-Bi-Pb(6262)/Al2O3p composite.

    PubMed

    Zhou, Z.; Fan, Z.; Peng, H. X.; Li, D. X.

    2001-02-01

    High-resolution electron microscopy was employed to characterize the interface structure of a cast Al-Mg-Si-Bi-Pb aluminium(6262)-based composite reinforced by alpha alumina particles with a trace of beta alumina in order to investigate the behaviour of alloying elements in cast composites. Except for a few primary Mg2Si particles, few reaction products were detected at the interface of Al/alpha-Al2O3 due to the unfavourable reaction kinetics during the squeeze-casting process. The Mg2Si particle has an orientation relationship with alpha-Al2O3 of [011]Mg2Si//[1210]alpha-Al2O3 (111)Mg2Si//(0006)alpha-Al2O3. A significant amount of MgAl2O4 was found on the surface of the beta-Al2O3 particles, which is in contrast to the small degree of reaction found on alpha-Al2O3 particles. MgAl2O4 and beta-Al2O3 particles have the following orientation relationship: [011]MgAl2O4//[1210]beta-Al2O3 (111) MgAl2O4//(0006)beta-Al2O3. The similar crystal structure of beta-Al2O3 to MgAl2O4 favours MgAl2O4 nucleation and growth on the surface of beta-Al2O3. Interfacial energy minimization dominates the atomic structure of the interface with the result that close packed planes and directions in the Al2O3 reinforcement and reaction products are parallel to the interfaces. Bi and Pb were found in the form of metallic nanometre particles between Al2O3 particles, or between the MgAl2O4 and Al2O3 particles, or in the open channels of beta-Al2O3 filled by the Al matrix. PMID:11207916

  13. Stress-corrosion crack-growth study of titanium alloy Ti-6Al-4V exposed to freon PCA and nitrogen tetroxide MON-1

    NASA Technical Reports Server (NTRS)

    Bjorklund, R. A.

    1983-01-01

    An experimental fracture mechanics program was performed to determine the stress corrosion crack growth sensitivity of the propellant tank material, titanium alloy Ti-6Al-4V, for aerospace satellite applications involving long term exposure to Freon PCA and nitrogen tetroxide MON-1. Sustained load tests were made at a 49 C (120 F) constant temperature using thin gauge tensile test specimens containing semielliptical surface flaws. Test specimen types included parent metal, center of weld, and weld heat affected zone. It was concluded that Ti-6Al-4V alloy is not adversely affected in a stress environment when exposed to Freon PCA for 1000 hours followed by exposure to nitrogen tetroxide MON-1 for 2000 hours at stress levels up to 80% of the experimental critical plane strain stress intensity factor.

  14. Two-Dimensional Stress Distributions in Disk and Ring High-Tc Superconductors

    NASA Astrophysics Data System (ADS)

    Tsuchimoto, Masanori; Takashima, Hideyoshi

    2000-10-01

    Stresses in a bulk high-Tc superconductor (HTS) are numerically evaluated when the bulk HTS is fully magnetized by field cooling. The stress distributions for disk and ring models are obtained through numerical analyses with the finite-difference method. Differences between one- and two-dimensional solutions are examined using the Bean model in terms of the maximum tension stress and shear stress.

  15. Synthesis and in situ high pressure Raman spectroscopy study of AlN dendritic crystal

    SciTech Connect

    Li, Xuefei; Kong, Lingnan; Shen, Longhai; Yang, Jinghai; Gao, Ming; Hu, Tingjing; Wu, Xingtong; Li, Ming

    2013-09-01

    Graphical abstract: - Highlights: • The sample is the typical dendritic crystal structure. • The phase transition of AlN dendritic crystal is researched. • The Raman signal of rock salt AlN is observed under high pressure. • Grüneisen parameters and phase transition criterion are discussed. - Abstract: AlN dendritic crystal was synthesized by the direct current arc discharge apparatus. X-ray diffraction (XRD) patterns indicated that the sample is hexagonal AlN and preferentially grown along the a-axis direction. Scanning electron microscopy (SEM) and Transmission electron microscopy (TEM) images reveal that the product mainly consists of micron AlN dendritic crystal. In situ high pressure Raman spectra of AlN dendritic crystal has been measured in the pressure ranged from ambient pressure to 32.97 GPa at room temperature by using diamond anvil cell. According to the Raman scattering results, the phase transition from the wurtzite to rock salt was found at about 20.73 GPa by the appearance of a new Raman signal. Above 20.73 GPa, a new Raman signal due to disorder-activated Raman scattering in the rock salt phase was observed. In addition, the pressure coefficients, phase transition criterion, and mode Grüneisen parameters of AlN dendritic crystal, which could be different from that of other AlN, are carefully discussed.

  16. Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures

    SciTech Connect

    Henderson, T.S.; Ikalainen, P.K.

    1995-12-31

    The authors report a two-temperature RF bias stress test on nominal 1.2 W 7.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTF`s of 2020 and 1340 hours were obtained at Tj = 218{degrees}C and 245{degrees}C, respectively, under nominal input bias. An activation energy of 0.42 eV is estimated, consistent with published results for similar devices under DC bias stress.

  17. InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Smith, M. D.; O'Mahony, D.; Conroy, M.; Schmidt, M.; Parbrook, P. J.

    2015-09-01

    This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750-800 C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 C. Around 800 C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 C, but deviated above this due to excessive metal-semiconductor inter-diffusion.

  18. Influence of Aging Treatments on Alterations of Microstructural Features and Stress Corrosion Cracking Behavior of an Al-Zn-Mg Alloy

    NASA Astrophysics Data System (ADS)

    Rout, Prasanta Kumar; Ghosh, M. M.; Ghosh, K. S.

    2015-07-01

    7xxx series Al-Zn-Mg-(Cu) alloys have higher strength in their peak-aged (T6) states compared with other age-hardenable aluminum alloys; however, the maximum strength peak-aged state is more susceptible to stress corrosion cracking (SCC) which leads to catastrophic failure. The over-aged (T7) temper with 10-15% lower strength has higher resistance to SCC requiring oversized structural aerospace component applications. The medium-strength AA7017 Al-Zn-Mg weldable alloy without Cu is also prone to SCC under certain environmental conditions. In the present investigation, the SCC behaviors of an AA7017 Al-Zn-Mg alloys of different tempers have been assessed. Specific aging schedules have been adapted to an AA7017 alloy to produce various tempers, e.g., under-, peak-(T6), over-(T7), and highly over-aged tempers. Artificial aging behavior of the AA7017 alloy has been characterized by hardness, electrical conductivity measurements, x-ray diffraction, differential scanning calorimetry, and electrochemical studies. Slow strain rate test technique was used to assess the SCC behaviors of the AA7017 alloys of under-, T6, T7, and highly over-aged tempers in 3.5 wt.% NaCl solution at free corrosion potential (FCP) and at applied anodic potential, as well. Results revealed that the AA7017 alloy tempers are not susceptible to SCC in 3.5 wt.% NaCl solution at FCP, but severely damaging to SCC at applied anodic potentials. Microstructural features, showing a non-recrystallized grain structure and the presence of discrete, widely spaced, not-interconnected ? precipitates at the grain boundaries, are the contributive factors by virtue of which the alloy tempers at FCP did not exhibit SCC. However, the applied anodic potential resulted in rapid metal dissolution from the grain boundary region and led to SCC. The local anodic dissolution (LAD) is believed to be the associated SCC mechanism.

  19. The Chinese High School Student's Stress in the School and Academic Achievement

    ERIC Educational Resources Information Center

    Liu, Yangyang; Lu, Zuhong

    2011-01-01

    In a sample of 466 Chinese high school students, we examined the relationships between Chinese high school students' stress in the school and their academic achievements. Regression mixture modelling identified two different classes of the effects of Chinese high school students' stress on their academic achievements. One class contained 87% of

  20. The Chinese High School Student's Stress in the School and Academic Achievement

    ERIC Educational Resources Information Center

    Liu, Yangyang; Lu, Zuhong

    2011-01-01

    In a sample of 466 Chinese high school students, we examined the relationships between Chinese high school students' stress in the school and their academic achievements. Regression mixture modelling identified two different classes of the effects of Chinese high school students' stress on their academic achievements. One class contained 87% of…

  1. High-Temperature Slow Crack Growth of Silicon Carbide Determined by Constant-Stress-Rate and Constant-Stress Testing

    NASA Technical Reports Server (NTRS)

    Choi, Sung H.; Salem, J. A.; Nemeth, N. N.

    1998-01-01

    High-temperature slow-crack-growth behaviour of hot-pressed silicon carbide was determined using both constant-stress-rate ("dynamic fatigue") and constant-stress ("static fatigue") testing in flexure at 1300 C in air. Slow crack growth was found to be a governing mechanism associated with failure of the material. Four estimation methods such as the individual data, the Weibull median, the arithmetic mean and the median deviation methods were used to determine the slow crack growth parameters. The four estimation methods were in good agreement for the constant-stress-rate testing with a small variation in the slow-crack-growth parameter, n, ranging from 28 to 36. By contrast, the variation in n between the four estimation methods was significant in the constant-stress testing with a somewhat wide range of n= 16 to 32.

  2. [Raman characterization of high-pressure phase transition in AlN nanowires].

    PubMed

    Shen, Long-hai; Li, Qian; Wu, Li-jun; Ma, Yan-mei; Cui, Qi-liang

    2011-03-01

    High-pressure phase transition of AlN nanowires was investigated in the range of 0-33.1 GPa by in situ Raman spectrum method in diamond anvil cell (DAC). The A1 (LO) vibration mode exhibits considerably asymmetry and broadening, indicating the occurrence of wurtzite-to-rocksalt phase transition. The Raman signal of high-pressure phase can be assigned to the disorder activated Raman scattering of rocksalt AlN. After fully releasing pressure, the Raman characterization of high-pressure phase was quenched. According to the pressure dependence of phonon frequency of AlN nanowires, the difference of transiton path between AlN nanowires and bulk materials was discussed and the mode Grneisen parameters were determined. PMID:21595221

  3. Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

    SciTech Connect

    Brazzini, Tommaso Sun, Huarui; Uren, Michael J.; Kuball, Martin; Casbon, Michael A.; Lees, Jonathan; Tasker, Paul J.; Jung, Helmut; Blanck, Hervé

    2015-05-25

    Hot electrons in AlGaN/GaN high electron mobility transistors are studied during radio frequency (RF) and DC operation by means of electroluminescence (EL) microscopy and spectroscopy. The measured EL intensity is decreased under RF operation compared to DC at the same average current, indicating a lower hot electron density. This is explained by averaging the DC EL intensity over the measured load line used in RF measurements, giving reasonable agreement. In addition, the hot electron temperature is lower by up to 15% under RF compared to DC, again at least partially explainable by the weighted averaging along the specific load line. However, peak electron temperature under RF occurs at high V{sub DS} and low I{sub DS} where EL is insignificant suggesting that any wear-out differences between RF and DC stress of the devices will depend on the balance between hot-carrier and field driven degradation mechanisms.

  4. Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

    NASA Astrophysics Data System (ADS)

    Brazzini, Tommaso; Casbon, Michael A.; Sun, Huarui; Uren, Michael J.; Lees, Jonathan; Tasker, Paul J.; Jung, Helmut; Blanck, Hervé; Kuball, Martin

    2015-05-01

    Hot electrons in AlGaN/GaN high electron mobility transistors are studied during radio frequency (RF) and DC operation by means of electroluminescence (EL) microscopy and spectroscopy. The measured EL intensity is decreased under RF operation compared to DC at the same average current, indicating a lower hot electron density. This is explained by averaging the DC EL intensity over the measured load line used in RF measurements, giving reasonable agreement. In addition, the hot electron temperature is lower by up to 15% under RF compared to DC, again at least partially explainable by the weighted averaging along the specific load line. However, peak electron temperature under RF occurs at high VDS and low IDS where EL is insignificant suggesting that any wear-out differences between RF and DC stress of the devices will depend on the balance between hot-carrier and field driven degradation mechanisms.

  5. High Sensitivity Stress Sensor Based on Hybrid Materials

    NASA Technical Reports Server (NTRS)

    Cao, Xian-An (Inventor)

    2014-01-01

    A sensing device is used to detect the spatial distributions of stresses applied by physical contact with the surface of the sensor or induced by pressure, temperature gradients, and surface absorption. The sensor comprises a hybrid active layer that includes luminophores doped in a polymeric or organic host, altogether embedded in a matrix. Under an electrical bias, the sensor simultaneously converts stresses into electrical and optical signals. Among many applications, the device may be used for tactile sensing and biometric imaging.

  6. Protective SiAlON Coating with Embedded High Temperature Corrosion Sensor

    NASA Astrophysics Data System (ADS)

    Rivers, S. B.; Krassikoff, J. I.; Bernhardt, G.; Bocchino, C. J.; Lad, R. J.

    2007-03-01

    We have fabricated oxidation resistant and wear resistant SiAlON films by RF magnetron co-sputtering of Al and Si targets in Ar/O2/N2 mixtures. The SiAlON films are amorphous, extremely smooth, and have very low oxygen permeability making them extremely attractive as passivation layers on a variety of sensors and other microelectronic devices used in high-temperature oxidizing environments. To analyze the performance of these films as passivation coatings, we incorporated a corrosion sensor at the SiAlON-substrate interface to monitor oxygen penetration through the coating. This corrosion sensor is a serpentine metal pattern. The conductivity changes as a function of time are monitored giving an in situ quantitative measure of the oxidation rate of the metal sensor due to oxygen diffusion through the SiAlON film.

  7. Heat Pipe Embedded AlSiC Plates for High Conductivity - Low CTE Heat Spreaders

    SciTech Connect

    Johnson, Matthew ); Weyant, J.; Garner, S. ); Occhionero, M. )

    2010-01-07

    Heat pipe embedded aluminum silicon carbide (AlSiC) plates are innovative heat spreaders that provide high thermal conductivity and low coefficient of thermal expansion (CTE). Since heat pipes are two phase devices, they demonstrate effective thermal conductivities ranging between 50,000 and 200,000 W/m-K, depending on the heat pipe length. Installing heat pipes into an AlSiC plate dramatically increases the plate’s effective thermal conductivity. AlSiC plates alone have a thermal conductivity of roughly 200 W/m-K and a CTE ranging from 7-12 ppm/ deg C, similar to that of silicon. An equivalent sized heat pipe embedded AlSiC plate has effective thermal conductivity ranging from 400 to 500 W/m-K and retains the CTE of AlSiC.

  8. Effect of Plasticity on Stress Heterogeneity at High Pressure

    NASA Astrophysics Data System (ADS)

    Weidner, D. J.; Li, L.

    2003-12-01

    It has become routine to measure the differential strain field in both diamond anvil and multi-anvil cells using synchrotron x-rays. In these experiments, the x-rays pass through the sample along a path perpendicular to the compressive axis of a cylindrical stress field. Then the diffracted x-rays sample the lattice spacings both parallel and perpendicular to the maximum stress. Detection can be by means of a 2-D system such as an imaging plate or a CCD detector with monochromatic x-rays, where the Debye rings are recorded as a function of the azimuthal angle, O. Then the lattice spacings parallel to the maximum stress axis can be compared with those parallel to minimum stress axis. White x-rays provide the same results with multiple solid state detectors, used in conjunction with a conical slit. These measurements have been possible with the use of x-ray transparent gaskets, usually Be for the diamond cell, and x-ray transparent anvils, such as cubic boron nitride, for the multi-anvil system. Each diffraction line will give rise to a measure of the stress field in the sample, giving stress measures for distinct populations of grains, namely those whose orientations meet the necessary diffraction conditions. If the sample has been compressed and strained elastically, then the Reuss V Voight bounds become the defining relationship among the stress V strain fields of the different populations of grains that are sampled by x-ray diffraction lines. Singh indicates the relationship between the strain field and the average stress field using the parameter, alpha = 1 to indicate a \\x9DReuss solid (uniform stress) and alpha = 0 indicating a \\x9DVoight solid (uniform strain). A value between 0 and 1 indicates a mixed boundary condition solid. However, when the polycrystal is plastically deformed, several important changes occur. First, the x-ray diffraction is only sampling a portion of the total strain field. It does not reflect the plastic portion. Second, the stress in an individual grain is no longer controlled by the elastic properties, but rather by the plastic properties. The Schmidt factor, which represents the ratio of a stress on a dislocation to the stress on the grain, becomes the relevant measure of anisotropy and the stress fields in the different grain populations now evolve to maintain the necessary stress on the dislocations as to enable plastic deformation. The Taylor V Sachs bounds replace the Reuss V Voight bounds. In general, the stress field of the various populations of grains will change radically. Calculations, using a self-consistent polycrystalline model indicate that once plastic deformation has occurred in the sample, it will generally be no longer possible to use the Singh formalism to define the single-crystal elastic properties.

  9. Cast Aluminum Alloys for High Temperature Applications Using Nanoparticles Al2O3 and Al3-X Compounds (X = Ti, V, Zr)

    NASA Technical Reports Server (NTRS)

    Lee, Jonathan A.

    2009-01-01

    In this paper, the effect of nanoparticles Al2O3 and Al3-X compounds (X = Ti, V, Zr) on the improvement of mechanical properties of aluminum alloys for elevated temperature applications is presented. These nanoparticles were selected based on their low cost, chemical stability and low diffusions rates in aluminum at high temperatures. The strengthening mechanism at high temperature for aluminum alloy is based on the mechanical blocking of dislocation movements by these nanoparticles. For Al2O3 nanoparticles, the test samples were prepared from special Al2O3 preforms, which were produced using ceramic injection molding process and then pressure infiltrated by molten aluminum. In another method, Al2O3 nanoparticles can also be homogeneously mixed with fine aluminum powder and consolidated into test samples through hot pressing and sintering. With the Al3-X nanoparticles, the test samples are produced as precipitates from in-situ reactions with molten aluminum using conventional permanent mold or die casting techniques. It is found that cast aluminum alloy using nanoparticles Al3-X is the most cost effective method to produce high strength aluminum alloys for high temperature applications in comparison to nanoparticles Al2O3. Furthermore, significant mechanical properties retention in high temperature environment could be achieved with Al3-X nanoparticles, resulting in tensile strength of nearly 3 times higher than most 300- series conventional cast aluminum alloys tested at 600 F.

  10. Characterization of Al2O3 in High-Strength Mo Alloy Sheets by High-Resolution Transmission Electron Microscopy.

    PubMed

    Zhou, Yucheng; Gao, Yimin; Wei, Shizhong; Hu, Yajie

    2016-02-01

    A novel type of alumina (Al2O3)-doped molybdenum (Mo) alloy sheet was prepared by a hydrothermal method and a subsequent powder metallurgy process. Then the characterization of α-Al2O3 was investigated using high-resolution transmission electron microscopy as the research focus. The tensile strength of the Al2O3-doped Mo sheet is 43-85% higher than that of the pure Mo sheet, a very obvious reinforcement effect. The sub-micron and nanometer-scale Al2O3 particles can increase the recrystallization temperature by hindering grain boundary migration and improve the tensile strength by effectively blocking the motion of the dislocations. The Al2O3 particles have a good bond with the Mo matrix and there exists an amorphous transition layer at the interface between Al2O3 particles and the Mo matrix in the as-rolled sheet. The sub-structure of α-Al2O3 is characterized by a number of nanograins in the $\\left[ {2\\bar{2}1} \\right]$ direction. Lastly, a new computer-based method for indexing diffraction patterns of the hexagonal system is introduced, with 16 types of diffraction patterns of α-Al2O3 indexed. PMID:26914997

  11. The interaction of diet and stress in rats: high-energy food and sucrose treatment.

    PubMed

    Dess, N K; Choe, S; Minor, T R

    1998-01-01

    Exposure to inescapable shock typically reduces eating and body weight in rats. The present study examined the modulation of stress effects by prestress diet and poststress sugar availability. Maintenance on a high-fat, high-energy food attenuated stress-induced weight loss and anorexia and increased high-energy food selection when a low-energy wet mash was the only alternative. Access to sugar after stress also reduced short-term weight loss; among rats maintained on high-energy food, body weight was spared absolutely. The dependence of stress effects on pre- and poststress diet alternatives may speak to individual differences in the stress-eating relationship in humans. More generally, these results support a conceptualization of stress in terms of metabolic challenge and the integrated reorganization of energy regulatory processes. PMID:9438966

  12. Low-temperature plasma-assisted growth of optically transparent, highly oriented nanocrystalline AlN

    SciTech Connect

    Mirpuri, C.; Xu, S.; Long, J. D.; Ostrikov, K.

    2007-01-15

    Optically transparent, highly oriented nanocrystalline AlN(002) films have been synthesized using a hybrid plasma enhanced chemical vapor deposition and plasma-assisted radio frequency (rf) magnetron sputtering process in reactive Ar+N{sub 2} and Ar+N{sub 2}+H{sub 2} gas mixtures at a low Si(111)/glass substrate temperature of 350 degree sign C. The process conditions, such as the sputtering pressure, rf power, substrate temperature, and N{sub 2} concentration were optimized to achieve the desired structural, compositional, and optical characteristics. X-ray diffractometry reveals the formation of highly c-oriented AlN films at a sputtering pressure of 0.8 Pa. Field emission scanning electron microscopy suggests the uniform distribution of AlN grains over large surface areas and also the existence of highly oriented in the (002) direction columnar structures of a typical length {approx}100-500 nm with an aspect ratio of {approx}7-15. X-ray photoelectron and energy dispersive x-ray spectroscopy suggest that films deposited at a rf power of 400 W feature a chemically pure and near stoichiometric AlN. The bonding states of the AlN films have been confirmed by Raman and Fourier transform infrared spectroscopy showing strong E2 (high) and E1 transverse optical phonon modes. Hydrogenated AlN films feature an excellent optical transmittance of {approx}80% in the visible region of the spectrum, promising for advanced optical applications.

  13. Phase Transformation of Al2O3 Under High Pressure and High Temperature and its Effect on Ruby Pressure Scale

    NASA Astrophysics Data System (ADS)

    Prewitt, C.; Lin, J.; Dera, P.; Nagayoshi, S.; Gregoryanz, E.; Mao, H.; Hemley, R.

    2003-12-01

    Corundum (? -Al2O3) is an important material in geophysics, high-pressure physics, and ceramic science. The pressure-induced shift of the Cr3+ fluorescence wavelength of ruby (Cr3+ doped ? -Al2O3) is widely used as a pressure calibrant in diamond anvil cell experiments. Theoretical calculations predict that the corundum transforms to the Rh2O3(II) structure (space group: Pbcn) and then to the Pbnm-perovskite structure under high pressures (Marton and Cohen, 1994; Thomson et al., 1996). The phase transformation from the corundum structure to the Rh2O3(II) structure was reported to occur at about 100 GPa in the high-pressure X-ray diffraction experiments after high-temperature laser heating at about 1000 K (Funamori and Jeanloz, 1997), but other high-pressure X-ray diffraction experiments to 175 GPa at 300 K did not observe such a phase transformation (Jephcoat et al., 1988). Recent shock-wave experiments on corundum show that two transitions occurred at 79 GPa and 250 GPa (Hama and Suito, 2002), consistent with the theoretical calculations (Thomson et al., 1996). To understand the crystal structure of the high-pressure phase and the effect of the phase transformation on the ruby pressure scale, we have studied Al2O3 with in situ X-ray diffraction in a laser-heated diamond anvil cell up to 130 GPa and 2300 K. A phase transformation in Al2O3 was observed to occur above 100 GPa and at high temperatures. The powder diffraction lines of the high-pressure phase are consistent with that of the Rh2O3(II) structure model. The refined crystal structure of the high-pressure phase will be discussed in this paper. Moreover, the ruby fluorescence spectra of the quenched Al2O3 samples under ambient conditions show significant red shifts; i.e. the R1 peak of the quenched sample occurs at 696 nm while the R1 peak for the sample before pressurizing occurs at 692 nm. The fossilized pressure indicates that chromium atoms have been re-distributed in the Al2O3 structure during laser heating. The evidence also suggests that a phase transformation in ruby at high pressures after high-temperature laser heating may affect the ruby calibration scale.

  14. Polyaluminum chloride with high Al30 content as removal agent for arsenic-contaminated well water.

    PubMed

    Mertens, Jasmin; Casentini, Barbara; Masion, Armand; Pthig, Rosemarie; Wehrli, Bernhard; Furrer, Gerhard

    2012-01-01

    Polyaluminum chloride (PACl) is a well-established coagulant in water treatment with high removal efficiency for arsenic. A high content of Al(30) nanoclusters in PACl improves the removal efficiency over broader dosage and pH range. In this study we tested PACl with 75% Al(30) nanoclusters (PACl(Al30)) for the treatment of arsenic-contaminated well water by laboratory batch experiments and field application in the geothermal area of Chalkidiki, Greece, and in the Pannonian Basin, Romania. The treatment efficiency was studied as a function of dosage and the nanoclusters' protonation degree. Acid-base titration revealed increasing deprotonation of PACl(Al30) from pH 4.7 to the point of zero charge at pH 6.7. The most efficient removal of As(III) and As(V) coincided with optimal aggregation of the Al nanoclusters at pH 7-8, a common pH range for groundwater. The application of PACl(Al30) with an Al(tot) concentration of 1-5mM in laboratory batch experiments successfully lowered dissolved As(V) concentrations from 20 to 230 ?g/L to less than 5 ?g/L. Field tests confirmed laboratory results, and showed that the WHO threshold value of 10 ?g/L was only slightly exceeded (10.8 ?g/L) at initial concentrations as high as 2300 ?g/L As(V). However, As(III) removal was less efficient (<40%), therefore oxidation will be crucial before coagulation with PACl(Al30). The presence of silica in the well water improved As(III) removal by typically 10%. This study revealed that the Al(30) nanoclusters are most efficient for the removal of As(V) from water resources at near-neutral pH. PMID:22078251

  15. Thermal treatment and utilization of Al-rich waste in high calcium fly ash geopolymeric materials

    NASA Astrophysics Data System (ADS)

    Chindaprasirt, Prinya; Rattanasak, Ubolluk; Vongvoradit, Pimdao; Jenjirapanya, Supichart

    2012-09-01

    The Al-rich waste with aluminium and hydrocarbon as the major contaminant is generated at the wastewater treatment unit of a polymer processing plant. In this research, the heat treatment of this Al-rich waste and its use to adjust the silica/alumina ratio of the high calcium fly ash geopolymer were studied. To recycle the raw Al-rich waste, the waste was dried at 110C and calcined at 400 to 1000C. Mineralogical analyses were conducted using X-ray diffraction (XRD) to study the phase change. The increase in calcination temperature to 600, 800, and 1000C resulted in the phase transformation. The more active alumina phase of active ?-Al2O3 was obtained with the increase in calcination temperature. The calcined Al-rich waste was then used as an additive to the fly ash geopolymer by mixing with high calcium fly ash, water glass, 10 M sodium hydroxide (NaOH), and sand. Test results indicated that the calcined Al-rich waste could be used as an aluminium source to adjust the silica/alumina ratio and the strength of geopolymeric materials. The fly ash geopolymer mortar with 2.5wt% of the Al-rich waste calcined at 1000C possessed the 7-d compressive strength of 34.2 MPa.

  16. Pt-Al2O3 nanocoatings for high temperature concentrated solar thermal power applications

    NASA Astrophysics Data System (ADS)

    Nuru, Zebib. Y.; Arendse, C. J.; Nemutudi, R.; Nemraoui, O.; Maaza, M.

    2012-05-01

    Nano-phased structures based on metal-dielectric composites, also called cermets (ceramic-metal), are considered among the most effective spectral selective solar absorbers. For high temperature applications (stable up to 650 C) noble metal nanoparticles and refractory oxide host matrices are ideal as per their high temperature chemical inertness and stability: Pt/Al2O3 cermet nano-composites are a representative family. This contribution reports on the optical properties of Pt/Al2O3 cermet nano-composites deposited in a multilayered tandem structure. The radio-frequency sputtering optimized Pt/Al2O3 solar absorbers consist of stainless steel substrate/ Mo coating layer/ Pt-Al2O3/ protective Al2O3 layer and stainless steel substrate/ Mo coating layer /Pt-Al2O3 for different composition and thickness of the Pt-Al2O3 cermet coatings. The microstructure, morphology, theoretical modeling and optical properties of the coatings were analyzed by the x-ray diffraction, atomic force, microscopy, effective medium approximation and UV-vis specular and diffuse reflectance.

  17. Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

    NASA Astrophysics Data System (ADS)

    Toko, K.; Kurosawa, M.; Saitoh, N.; Yoshizawa, N.; Usami, N.; Miyao, M.; Suemasu, T.

    2012-08-01

    (111)-oriented Ge thin films on insulators are essential for advanced electronics and photovoltaic applications. We investigate Al-induced crystallization of amorphous-Ge films (50-nm thickness) on insulators focusing on the annealing temperature and the diffusion controlling process between Ge and Al. The (111)-orientation fraction of the grown Ge layer reaches as high as 99% by combining the low-temperature annealing (325 C) and the native-oxidized Al (AlOx) diffusion-control layer. Moreover, the transmission electron microscopy reveals the absence of defects on the Ge surface. This (111)-oriented Ge on insulators promises to be the high-quality epitaxial template for various functional materials to achieve next-generation devices.

  18. Fabrication of Al2O3/glass/Cf Composite Substrate with High Thermal Conductivity

    NASA Astrophysics Data System (ADS)

    Wang, S. X.; Liu, G. S.; Ouyang, X. Q.; Wang, Y. D.; Zhang, D.

    2016-02-01

    In this paper, carbon fiber with high thermal conductivity was introduced into the alumina-based composites. To avoid oriented alignment of carbon fibers (Cf) and carbothermal reactions during the sintering process, the Al2O3/glass/Cf substrate was hot-pressed under a segmental-pressure procedure at 1123 K. Experimental results show that carbon fibers randomly distribute and form a bridging structure in the matrix. The three-dimensional network of Cf in Al2O3/glass/Cf substrate brings excellent heat conducting performance due to the heat conduction by electrons. The thermal conductivity of Al2O3/30%glass/30%Cf is as high as 28.98 W mK-1, which is 4.56 times larger than that of Al2O3/30%glass.

  19. Fabrication of Al2O3/glass/Cf Composite Substrate with High Thermal Conductivity

    NASA Astrophysics Data System (ADS)

    Wang, S. X.; Liu, G. S.; Ouyang, X. Q.; Wang, Y. D.; Zhang, D.

    2015-12-01

    In this paper, carbon fiber with high thermal conductivity was introduced into the alumina-based composites. To avoid oriented alignment of carbon fibers (Cf) and carbothermal reactions during the sintering process, the Al2O3/glass/Cf substrate was hot-pressed under a segmental-pressure procedure at 1123 K. Experimental results show that carbon fibers randomly distribute and form a bridging structure in the matrix. The three-dimensional network of Cf in Al2O3/glass/Cf substrate brings excellent heat conducting performance due to the heat conduction by electrons. The thermal conductivity of Al2O3/30%glass/30%Cf is as high as 28.98 W mK-1, which is 4.56 times larger than that of Al2O3/30%glass.

  20. Metallographic assessment of Al-12Si high-pressure die casting escalator steps.

    PubMed

    Vander Voort, George Frederic; Surez-Pea, Beatriz; Asensio-Lozano, Juan

    2014-10-01

    A microstructural characterization study was performed on high-pressure die cast specimens extracted from escalator steps manufactured from an Al-12 wt.% Si alloy designed for structural applications. Black and white, color light optical imaging and scanning electron microscopy techniques were used to conduct the microstructural analysis. Most regions in the samples studied contained globular-rosette primary ?-Al grains surrounded by an Al-Si eutectic aggregate, while primary dendritic ?-Al grains were present in the surface layer. This dendritic microstructure was observed in the regions where the melt did not impinge directly on the die surface during cavity filling. Consequently, microstructures in the surface layer were nonuniform. Utilizing physical metallurgy principles, these results were analyzed in terms of the applied pressure and filling velocity during high-pressure die casting. The effects of these parameters on solidification at different locations of the casting are discussed. PMID:24999947

  1. Stress corrosion cracking of several high strength ferrous and nickel alloys

    NASA Technical Reports Server (NTRS)

    Nelson, E. E.

    1971-01-01

    The stress corrosion cracking resistance of several high strength ferrous and nickel base alloys has been determined in a sodium chloride solution. Results indicate that under these test conditions Multiphase MP35N, Unitemp L605, Inconel 718, Carpenter 20Cb and 20Cb-3 are highly resistant to stress corrosion cracking. AISI 410 and 431 stainless steels, 18 Ni maraging steel (250 grade) and AISI 4130 steel are susceptible to stress corrosion cracking under some conditions.

  2. High temperature deformation in 2036 Al and 0.2 wt % Zr-2036 A1

    SciTech Connect

    Huang, J.S.; Schwartz, A.J.; Nieh, T.G.

    1995-11-01

    The microstructure and high-temperature deformation of 2036 Al and a 0.2 wt % Zr modified 2036 Al were characterized. A particle-simulated- nucleation process was applied to refine grain structure in both alloys. Thermomechanically processed materials were tested from 450 to 500 C and strain rates from 2{times}10{sup {minus}1} to 2{times}10{sup {minus}4}s{sup {minus}1}. Strain rate sensitivity exponent, activation energy, and total elongation were measured, and the deformation mechanism was proposed. Effect of Zr on microstructure and deformation of 2036 Al at elevated temperatures was discussed.

  3. Induction of engineered residual stresses fields and enhancement of fatigue life of high reliability metallic components by laser shock processing

    NASA Astrophysics Data System (ADS)

    Ocaa, J. L.; Porro, J. A.; Daz, M.; Ruiz de Lara, L.; Correa, C.; Gil-Santos, A.; Peral, D.

    2013-02-01

    Laser shock processing (LSP) is being increasingly applied as an effective technology for the improvement of metallic materials mechanical and surface properties in different types of components as a means of enhancement of their corrosion and fatigue life behavior. As reported in previous contributions by the authors, a main effect resulting from the application of the LSP technique consists on the generation of relatively deep compression residual stresses field into metallic alloy pieces allowing an improved mechanical behaviour, explicitly the life improvement of the treated specimens against wear, crack growth and stress corrosion cracking. Additional results accomplished by the authors in the line of practical development of the LSP technique at an experimental level (aiming its integral assessment from an interrelated theoretical and experimental point of view) are presented in this paper. Concretely, follow-on experimental results on the residual stress profiles and associated surface properties modification successfully reached in typical materials (especially Al and Ti alloys characteristic of high reliability components in the aerospace, nuclear and biomedical sectors) under different LSP irradiation conditions are presented along with a practical correlated analysis on the protective character of the residual stress profiles obtained under different irradiation strategies. Additional remarks on the improved character of the LSP technique over the traditional "shot peening" technique in what concerns depth of induced compressive residual stresses fields are also made through the paper.

  4. Pb nanowire formation on Al/lead zirconate titanate surfaces in high-pressure hydrogen

    SciTech Connect

    Alvine, Kyle J.; Shutthanandan, V.; Arey, Bruce W.; Wang, Chong M.; Bennett, Wendy D.; Pitman, Stan G.

    2012-07-12

    Thin films of Al on lead zirconate titanate (PZT) annealed in high-pressure hydrogen at 100C exhibit surface Pb nanowire growth. Wire diameter is approximately 80 nm and length can exceed 100 microns. Based on microstructural analysis using electron microscopy and ion scattering, a vapor-solid scheme with hydrogen as a carrier gas was proposed as a growth mechanism. We expect that these observations may lead to controlled Pb nanowires growth through pattering of the Al film.

  5. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (λ = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  6. Derivation of Apollo 14 High-Al Basalts at Discrete Times: Rb-Sr Isotopic Constraints

    NASA Technical Reports Server (NTRS)

    Hui. Hejiu; Neal, Clive, R.; Shih, Chi-Yu; Nyquist, Laurence E.

    2012-01-01

    Pristine Apollo 14 (A-14) high-Al basalts represent the oldest volcanic deposits returned from the Moon [1,2] and are relatively enriched in Al2O3 (>11 wt%) compared to other mare basalts (7-11 wt%). Literature Rb-Sr isotopic data suggest there are at least three different eruption episodes for the A-14 high-Al basalts spanning the age range approx.4.3 Ga to approx.3.95 Ga [1,3]. Therefore, the high-Al basalts may record lunar mantle evolution between the formation of lunar crust (approx.4.4 Ga) and the main basin-filling mare volcanism (<3.85 Ga) [4]. The high-Al basalts were originally classified into five compositional groups [5,6], and then regrouped into three with a possible fourth comprising 14072 based on the whole-rock incompatible trace element (ITE) ratios and Rb-Sr radiometric ages [7]. However, Rb-Sr ages of these basalts from different laboratories may not be consistent with each other because of the use of different 87Rb decay constants [8] and different isochron derivation methods over the last four decades. This study involved a literature search for Rb-Sr isotopic data previously reported for the high-Al basalts. With the re-calculated Rb-Sr radiometric ages, eruption episodes of A-14 high-Al basalts were determined, and their petrogenesis was investigated in light of the "new" Rb-Sr isotopic data and published trace element abundances of these basalts.

  7. Assessment of microalloying effects on the high temperature fatigue behavior of NiAl

    NASA Technical Reports Server (NTRS)

    Noebe, R. D.; Lerch, B. A.; Rao, K. B. S.

    1995-01-01

    Binary NiAl suffers from a lack of strength and poor creep properties at and above 1000 K. Poor creep resistance in turn affects low cycle fatigue (LCF) lives at low strain ranges due to the additional interactions of creep damage. One approach for improving these properties involved microalloying with either Zr or N. As an integral part of a much larger alloying program the low cycle fatigue behavior of Zr and N doped nickel aluminides produced by extrusion of prealloyed powders has been investigated. Strain controlled LCF tests were performed in air at 1000 K. The influence of these microalloying additions on the fatigue life and cyclic stress response of polycrystalline NiAl are discussed.

  8. Band gap bowing parameter in pseudomorphic Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structures

    SciTech Connect

    Goyal, Anshu; Kapoor, Ashok K.; Raman, R.; Dalal, Sandeep; Mohan, Premila; Muralidharan, R.

    2015-06-14

    A method for evaluation of aluminium composition in pseudomorphic Al{sub x}Ga{sub 1−x}N layer from the measured photoluminescence (PL) peak energy is presented here. The layers were grown by metalorganic chemical vapor deposition and characterized by high resolution X-ray diffraction (HRXRD), PL, cathodoluminescence, and atomic force microscopy. We estimated the value of biaxial stress in pseudomorphic Al{sub x}Ga{sub 1−x}N layers grown on sapphire and silicon carbide substrates using HRXRD scans. The effect of biaxial stress on the room temperature band edge luminescence in pseudomorphic Al{sub x}Ga{sub 1−x}N/GaN layers for various aluminium compositions in the range of 0.2 < x < 0.3 was determined. The value of pressure coefficient of band gap was also estimated. The stress corrected bowing parameter in Al{sub x}Ga{sub 1−x}N was determined as 0.50 ± 0.06 eV. Our values match well with the theoretically obtained value of bowing parameter from the density functional theory.

  9. Cryogenic Resistivities of NbTiAlVTaLax, CoCrFeNiCu and CoCrFeNiAl High Entropy Alloys

    NASA Astrophysics Data System (ADS)

    Yang, Xiao; Zhang, Yong

    2011-06-01

    In the paper, NbTiAlVTaLax (molar ratio, x=0, 0.1, 0.2) high entropy alloys were prepared by arc melting mixtures of the pure metal elements. The NbTiAlVTaLax alloys are composed mainly of BCC solid solution, and have a typical cast dendritic microstructure. The cryogenic resistivities of NbTiAlVTaLax, CoCrFeNiCu and CoCrFeNiAl high entropy alloys had been investigated. With the increase of La addition, the resistivities of NbTiAlVTaLax alloys increase. With the temperature increasing, the resistivity of CoCrFeNiCu alloy decreases, while that of CoCrFeNiAl alloy increases.

  10. High-pressure synthesis and superconductivity of the Laves phase compound Ca(Al,Si)2 composed of truncated tetrahedral cages Ca@(Al,Si))12.

    PubMed

    Tanaka, Masashi; Zhang, Shuai; Inumaru, Kei; Yamanaka, Shoji

    2013-05-20

    The Zintl compound CaAl2Si2 peritectically decomposes to a new ternary cubic Laves phase Ca(Al,Si)2 and an Al-Si eutectic at temperatures above 750 C under a pressure of 13 GPa. The ternary Laves phase compound can also be prepared as solid solutions Ca(Al(1-x)Si(x))2 (0.35 ? x ? 0.75) directly from the ternary mixtures under high-pressure and high-temperature conditions. The cubic Laves phase structure can be regarded as a type of clathrate compound composed of face-sharing truncated tetrahedral cages with Ca atoms at the center, Ca@(Al,Si)12. The compound with a stoichiometric composition CaAlSi exhibits superconductivity with a transition temperature of 2.6 K. This is the first superconducting Laves phase compound composed solely of commonly found elements. PMID:23654286

  11. Equation of State of an AlCoCrCuFeNi High-Entropy Alloy

    NASA Astrophysics Data System (ADS)

    Li, Gong; Xiao, Daihong; Yu, Pengfei; Zhang, Lijun; Liaw, Peter K.; Li, Yanchun; Liu, Riping

    2015-08-01

    The pressure-volume (P-V) relationship of the AlCoCrCuFeNi high-entropy alloy (HEA) at room temperature has been studied using in situ high-pressure energy-dispersive x-ray diffraction with synchrotron radiation at high pressures. The equation of state of the AlCoCrCuFeNi HEA is determined by the calculation of the radial distribution function. The experimental results indicate that the HEA keeps a stable face-centered-cubic + body-centered-cubic structure in the experimental pressure range from 0 GPa to 24 GPa.

  12. High temperature stability, interface bonding, and mechanical behavior in (beta)-NiAl and Ni3Al matrix composites with reinforcements modified by ion beam enhanced deposition

    NASA Astrophysics Data System (ADS)

    Grummon, D. S.

    1993-01-01

    Diffusion-bonded NiAl-Al2O3 and Ni3Al-Al2O3 couples were thermally fatigued at 900 C for 1500 and 3500 cycles. The fiber-matrix interface weakened after 3500 cycles for the Saphikon fibers, while the Altex, PRD-166, and FP fibers showed little, if any, degradation. Diffusion bonding of fibers to Nb matrix is being studied. Coating the fibers slightly increases the tensile strength and has a rule-of-mixtures effect on elastic modulus. Push-out tests on Sumitomo and FP fibers in Ni aluminide matrices were repeated. Al2O3 was evaporated directly from pure oxide rod onto acoustically levitated Si carbide particles, using a down-firing, rod-fed electron beam hearth; superior coatings were subsequently produced using concurrent irradiation with 200-eV argon ion-assist beam. The assist beam produced adherent films with reduced tensile stresses. In diffusion bonding in B-doped Ni3Al matrices subjected to compressive bonding at 40 MPa at 1100 C for 1 hr, the diffusion barriers failed to prevent catastrophic particle-matrix reaction, probably because of inadequate film quality. AlN coatings are currently being experimented with, produced by both reactive evaporation and by N(+)-ion enhanced deposition. A 3-kW rod-fed electron-beam-heated evaporation source has been brought into operation.

  13. Friction Stir Processing of a High Entropy Alloy Al0.1CoCrFeNi

    NASA Astrophysics Data System (ADS)

    Kumar, N.; Komarasamy, M.; Nelaturu, P.; Tang, Z.; Liaw, P. K.; Mishra, R. S.

    2015-05-01

    High entropy alloys are a new class of metallic materials with a potential for use in structural applications. However, most of the studies have focused on microhardness and compressive strength measurements for mechanical properties determination. This study presents the tensile deformation behavior of a single-phase, face-centered cubic Al0.1CoCrFeNi high entropy alloy (HEA). Friction stir processing was carried out to refine the grain size. Scanning electron microscopy and electron backscatter diffraction were carried out for microstructural examination. The grain size of the alloy was on the order of millimeters in the as-received condition. The average grain size after friction stir processing of the alloy was 14 ± 10 micrometers. The mechanical properties were determined through microhardness measurement and mini-tensile tests. The friction stir processed alloy showed a total elongation of ~75% for the mini-tensile sample used and yield strength of 315 MPa. It is an exceptional combination of strength and ductility. Friction stress was determined to be 174 MPa and the Hall-Petch coefficient was 371 MPa ( µm)1/2. Such a high value of Hall-Petch coefficient suggests that grain boundary strengthening can be a very effective strengthening mechanism for the HEA Al0.1CoCrFeNi.

  14. Failure mechanism of coated biomaterials under high impact-sliding contact stresses

    NASA Astrophysics Data System (ADS)

    Chen, Ying

    This study uses a newly developed testing method--- inclined cyclic impact-sliding test to investigate the failure behaviors of different types of biomaterials, (SS316L, Ti6Al4V and CoCr) coated by different coatings (TiN, DLC and PEO), under extremely high dynamic contact stress conditions. This test method can simulate the combined impact and sliding/rolling loading conditions, which is very practical in many aspects of commercial usages. During the tests, fatigue cracking, chipping, peeling and material transferring were observed in damaged area. This research is mainly focused on the failure behaviors of load-bearing materials which cyclic impacting and sliding are always involved. This purpose was accomplished in the three stages: First, impact-sliding test was carried out on TiN coated unhardened M2. It was found that soft substrate can cause early failure of coating due to the considerable plastic deformation in the substrate. In this case, stronger substrate is required to support coating better when tested under high contact stresses. Second, PEO coated Ti-6Al-4V was tested under pure sliding and impact-sliding wear conditions. PEO coating was found not strong enough to afford the high contact pressure under cyclic impact-sliding wear test due to its porous surface structure. However, the wear performance of PEO coating was enhanced due to the sub-stoichiometric oxide. To sum up, for load-bearing biomedical implants involved in high impacting movement, PEO coating may not be a promising surface protection. Third, the dense, smooth PVD/CVD bio-inert coatings were reconsidered. DLC and TiN coatings, combined by different substrates together with different interface materials were tested under the cyclic impact-sliding test using a set of proper loading. The results show that to choose a proper combination of coating, interface and substrate based on their mechanical properties is of great importance under the test condition. Hard substrates provide support to coating better and a ductile and adhesive interface layer can delay the cracked coating from peeled-off.

  15. Surface Thiolation of Al Microspheres to Deposite Thin and Compact Ag Shells for High Conductivity.

    PubMed

    Wang, Yilong; Wen, Jianghong; Zhao, Suling; Chen, Zhihong; Ren, Ke; Sun, Jie; Guan, Jianguo

    2015-12-15

    In this work, we have demonstrated a method for controllable thiolated functionalization coupled with electroless silver plating to achieve aluminum@silver (Al@Ag) core-shell composite particles with thin and compact layers. First, Al microspheres were functionalized by a well-known polymerizable silane coupling agent, i.e., 3-mercaptopropyltrimethoxysilane (MPTMS). Decreasing the ethanol-to-water volume ratio (F) in silane solution produces modification films with high content of thiol groups on Al microspheres, owing to the dehydration of silane molecules with hydroxyl groups on Al microspheres and self-polymerization of silane molecules. Then, ethanol was used as one of the solvents to play a major role in the uniform dispersion of silane coupling agent in the solution, resulting in uniformly distributing and covalently attaching thiol groups on Al microspheres. In electroless silver plating, thiol groups being densely grafted on the surface of Al microspheres favor the heterogeneous nucleation of Ag, since the thiol group can firmly bind with Ag(+) and enable the in situ reduction by the reducing reagent. In this manner, dense Ag nuclei tend to produce thin and compact silver shells on the Al microspheres surfaces. The as-obtained Al@Ag core-shell composite particles show a resistivity as low as (8.58 0.07) 10(-5) ?cm even when the Ag content is as low as 15.46 wt %. Therefore, the as-obtained Al@Ag core-shell composite particles have advantages of low weight, low silver content and high conductivity, which could make it a promising candidate for application in conductive and electromagnetic shielding composite materials. PMID:26574653

  16. EFFECTS OF HIGH TEMPERATURE STRESS ON COMPOSITION, VIGOR AND PROTEOME OF SOYBEAN MATURE DRY SEEDS

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Long-term high temperature stress can occur during soybean seed development through maturity and negatively impact seed quality. The effects of high temperature stress were investigated using seeds harvested from soybean plants grown in environment-controlled chambers. After being treated with hig...

  17. Parenting Stress and Parent Support Among Mothers With High and Low Education

    PubMed Central

    2015-01-01

    Current theorizing and evidence suggest that parenting stress might be greater among parents from both low and high socioeconomic positions (SEP) compared with those from intermediate levels because of material hardship among parents of low SEP and employment demands among parents of high SEP. However, little is known about how this socioeconomic variation in stress relates to the support that parents receive. This study explored whether variation in maternal parenting stress in a population sample was associated with support deficits. To obtain a clearer understanding of support deficits among mothers of high and low education, we distinguished subgroups according to mothers’ migrant and single-parent status. Participants were 5,865 mothers from the Growing Up in Scotland Study, who were interviewed when their children were 10 months old. Parenting stress was greater among mothers with either high or low education than among mothers with intermediate education, although it was highest for those with low education. Support deficits accounted for around 50% of higher stress among high- and low-educated groups. Less frequent grandparent contact mediated parenting stress among both high- and low-educated mothers, particularly migrants. Aside from this common feature, different aspects of support were relevant for high- compared with low-educated mothers. For high-educated mothers, reliance on formal childcare and less frequent support from friends mediated higher stress. Among low-educated mothers, smaller grandparent and friend networks and barriers to professional parent support mediated higher stress. Implications of differing support deficits are discussed. PMID:26192130

  18. Parenting stress and parent support among mothers with high and low education.

    PubMed

    Parkes, Alison; Sweeting, Helen; Wight, Daniel

    2015-12-01

    Current theorizing and evidence suggest that parenting stress might be greater among parents from both low and high socioeconomic positions (SEP) compared with those from intermediate levels because of material hardship among parents of low SEP and employment demands among parents of high SEP. However, little is known about how this socioeconomic variation in stress relates to the support that parents receive. This study explored whether variation in maternal parenting stress in a population sample was associated with support deficits. To obtain a clearer understanding of support deficits among mothers of high and low education, we distinguished subgroups according to mothers' migrant and single-parent status. Participants were 5,865 mothers from the Growing Up in Scotland Study, who were interviewed when their children were 10 months old. Parenting stress was greater among mothers with either high or low education than among mothers with intermediate education, although it was highest for those with low education. Support deficits accounted for around 50% of higher stress among high- and low-educated groups. Less frequent grandparent contact mediated parenting stress among both high- and low-educated mothers, particularly migrants. Aside from this common feature, different aspects of support were relevant for high- compared with low-educated mothers. For high-educated mothers, reliance on formal childcare and less frequent support from friends mediated higher stress. Among low-educated mothers, smaller grandparent and friend networks and barriers to professional parent support mediated higher stress. Implications of differing support deficits are discussed. PMID:26192130

  19. A Study Concerning Stress among High School Students in Selected Rural Schools.

    ERIC Educational Resources Information Center

    Peach, Larry

    This study identifies stressful events in the lives of high school students in a rural region of Tennessee. Questionnaires were completed by 240 high school students (144 female and 96 male). The questionnaires included 19 statements to which the participants were to respond concerning their belief about the stressfulness of the situation…

  20. Fibular stress fracture in a high school athlete.

    PubMed

    Greenberg, Elliot M; Gohn, Nicholas; Grady, Matthew

    2013-01-01

    The patient was a 15-year-old adolescent male who was referred to a physical therapist for a chief complaint of bilateral posterolateral lower-leg pain, which was worse in the right lower extremity than in the left. Due to findings that were concerning for a stress fracture, the patient was referred to a pediatric sports medicine physician. Subsequent radiographs revealed findings that were concerning for a stress fracture along the medial aspect of the midshaft of the right fibula. PMID:23277163

  1. Ulnar Shaft Stress Fracture in a High School Softball Pitcher

    PubMed Central

    Bigosinski, Krystian; Palmer, Trish; Weber, Kathleen; Evola, Jennifer

    2010-01-01

    This article presents a case of a 17-year-old softball pitcher with insidious onset of right forearm pain. On presentation, the patient had tenderness on palpation of the midshaft of the ulna, pain with resisted pronation, and pain with fulcrum-type stressing of the forearm. A bone scan revealed increased uptake in the right ulna, and a subsequent magnetic resonance imaging revealed bone marrow edema and numerous small ulnar stress fractures. She was treated with bone stimulation and complete rest and is in the process of returning to pitching. PMID:23015929

  2. Ulnar shaft stress fracture in a high school softball pitcher.

    PubMed

    Bigosinski, Krystian; Palmer, Trish; Weber, Kathleen; Evola, Jennifer

    2010-03-01

    This article presents a case of a 17-year-old softball pitcher with insidious onset of right forearm pain. On presentation, the patient had tenderness on palpation of the midshaft of the ulna, pain with resisted pronation, and pain with fulcrum-type stressing of the forearm. A bone scan revealed increased uptake in the right ulna, and a subsequent magnetic resonance imaging revealed bone marrow edema and numerous small ulnar stress fractures. She was treated with bone stimulation and complete rest and is in the process of returning to pitching. PMID:23015929

  3. Control of Al2O3/InAlN interface by two-step atomic layer deposition combined with high-temperature annealing

    NASA Astrophysics Data System (ADS)

    Nakano, Takuma; Chiba, Masahito; Akazawa, Masamichi

    2014-04-01

    An attempt was made to control the Al2O3/InAlN interface by the phase change of the Al2O3 layer formed by atomic layer deposition (ALD). The electrical properties of an InAlN metal-oxide-semiconductor (MOS) diode with a sufficiently thick ALD-Al2O3 layer deteriorated following conventional postdeposition annealing (PDA) at 850 C, which is sufficiently high for microcrystallization of the ALD-Al2O3 layer. However, X-ray photoelectron spectroscopy showed no evidence of an interface disorder in the ultrathin ALD-Al2O3/InAlN structure annealed at 850 C. Two-step ALD interrupted by annealing at 850 C right after the formation of the initial ultrathin Al2O3 layer improved the electrical properties of the MOS diode with reduced interface state density (Dit) and leakage current. A weak crystallization of the ultrathin Al2O3 layer was confirmed by transmission electron microscopy. Improvement of the interface disorder by high-temperature annealing is discussed as the origin of the Dit reduction.

  4. 76 FR 45303 - ING Asia Pacific High Dividend Equity Income Fund, et al.; Notice of Application

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-28

    ... statement showing the sources of the distribution (e.g., estimated net income, net short-term capital gains... COMMISSION ING Asia Pacific High Dividend Equity Income Fund, et al.; Notice of Application July 21, 2011... Dividend Equity Income Fund (``IAE''), ING Emerging Markets High Dividend Equity Fund (``IHD''); ING...

  5. Acceleration of degradation by highly accelerated stress test and air-included highly accelerated stress test in crystalline silicon photovoltaic modules

    NASA Astrophysics Data System (ADS)

    Suzuki, Soh; Tanahashi, Tadanori; Doi, Takuya; Masuda, Atsushi

    2016-02-01

    We examined the effects of hyper-hygrothermal stresses with or without air on the degradation of crystalline silicon (c-Si) photovoltaic (PV) modules, to shorten the required duration of a conventional hygrothermal-stress test [i.e., the “damp heat (DH) stress test”, which is conducted at 85 °C/85% relative humidity for 1,000 h]. Interestingly, the encapsulant within a PV module becomes discolored under the air-included hygrothermal conditions achieved using DH stress test equipment and an air-included highly accelerated stress test (air-HAST) apparatus, but not under the air-excluded hygrothermal conditions realized using a highly accelerated stress test (HAST) machine. In contrast, the reduction in the output power of the PV module is accelerated irrespective of air inclusion in hyper-hygrothermal test atmosphere. From these findings, we conclude that the required duration of the DH stress test will at least be significantly shortened using air-HAST, but not HAST.

  6. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Xue, JunShuai; Zhang, JinCheng; Hao, Yue

    2016-01-01

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm2/V s along with a sheet carrier density of 1.88 × 1013 cm-2 were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  7. High-temperature sulfidation of Fe-30Mo alloys containing ternary additions of Al

    SciTech Connect

    Wang, Ge.; Douglass, D.L. ); Gesmundo, F. )

    1991-06-01

    Fe-30Mo alloys containing up to 9.1 wt.% Al were sulfidized at 0.01 atm sulfur vapor over the temperature range of 700-900C. The sulfidation kinetics followed the parabolic rate law for all alloys at all temperatures. For alloys containing small and intermediate amounts of Al (<4.8 wt.%), a duplex sulfide scale formed. The outer layers of the scales were found to be relatively compact FeS in all cases; whereas the inner layers were composed of the layered compound MoS{sub 2} (intercalated with iron), the Chevrel compound Fe{sub x}Mo{sub 6}S{sub 8}, a spinel double sulfide Al{sub x}Mo{sub 2}S{sub 4}, depending on the Al content of the alloy and the sulfidation temperature. Extremely thin scales were found on the alloys with higher Al contents. Accordingly, extremely slow sulfidation rates were observed - even slower than the sulfidation rate of pure Mo. The transition of the sulfidation kinetics from a high-rate active mode to a low-rate passive mode required both a critical Al content in the alloy and a critical Mo content. Because of the two-phase nature of the alloys, the latter requirement implies a critical volume fraction of the intermetallic second-phase in the alloy, which has been known as the multiphase effect. Interestingly, the multiphase effect in these alloys was also a function of the Al content in the alloys.

  8. Highly textured growth of AlN films on sapphire by magnetron sputtering for high temperature surface acoustic wave applications

    SciTech Connect

    Aubert, T.; Assouar, M. B.; Legrani, O.; Elmazria, O.; Tiusan, C.; Robert, S.

    2011-03-15

    Piezoelectric aluminum nitride films were deposited onto 3 in. [0001] sapphire substrates by reactive magnetron sputtering to explore the possibility of making highly (002)-textured AlN films to be used in surface acoustic wave (SAW) devices for high temperature applications. The synthesized films, typically 1 {mu}m thick, exhibited a columnar microstructure and a high c-axis texture. The relationship between the microstructures and process conditions was examined by x-ray diffraction (XRD), transmission electron microscopy, and atomic force microscopy analyses. The authors found that highly (002)-textured AlN films with a full width at half maximum of the rocking curve of less than 0.3 deg. can be achieved under high nitrogen concentration and moderate growth temperature, i.e., 250 deg. C. The phi-scan XRD reveals the high in-plane texture of deposited AlN films. The SAW devices, based on the optimized AlN films on sapphire substrate, were characterized before and after an air annealing process at 800 deg. C for 90 min. The frequency response, recorded after the annealing process, confirmed that the thin films were still strong in a high temperature environment and that they had retained their piezoelectric properties.

  9. Fundamental studies of stress distributions and stress relaxation in oxide scales on high temperature alloys. [Final progress report

    SciTech Connect

    Shores, D.A.; Stout, J.H.; Gerberich, W.W.

    1993-06-01

    This report summarizes a three-year study of stresses arising in the oxide scale and underlying metal during high temperature oxidation and of scale cracking. In-situ XRD was developed to measure strains during oxidation over 1000{degrees}C on pure metals. Acoustic emission was used to observe scale fracture during isothermal oxidation and cooling, and statistical analysis was used to infer mechanical aspects of cracking. A microscratch technique was used to measure the fracture toughness of scale/metal interface. A theoretical model was evaluated for the development and relaxation of stresses in scale and metal substrate during oxidation.

  10. Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature

    NASA Astrophysics Data System (ADS)

    Glaab, Johannes; Ploch, Christian; Kelz, Rico; Stlmacker, Christoph; Lapeyrade, Mickael; Ploch, Neysha Lobo; Rass, Jens; Kolbe, Tim; Einfeldt, Sven; Mehnke, Frank; Kuhn, Christian; Wernicke, Tim; Weyers, Markus; Kneissl, Michael

    2015-09-01

    The degradation of the electrical and optical properties of (InAlGa)N-based multiple quantum well light emitting diodes (LEDs) emitting near 308 nm under different stress conditions has been studied. LEDs with different emission areas were operated at room temperature and at constant current densities of 75 A/cm2, 150 A/cm2, and 225 A/cm2. In addition, the heat sink temperature was varied between 15 C and 80 C. Two main modes for the reduction of the optical power were found, which dominate at different times of operation: (1) Within the first 100 h, a fast drop of the optical power is observed scaling exponentially with the temperature and having an activation energy of about 0.13 eV. The drop in optical power is accompanied by changes of the current-voltage (I-V) characteristic. (2) For operation times beyond 100 h, the optical power decreases slowly which can be reasonably described by a square root time dependence. Here, the degradation rate depends on the current density, rather than the current. Again, the rate of optical power reduction of the second mode depends exponentially on the temperature with an activation energy of about 0.21 eV. The drop in the optical power is accompanied by an increased reverse-bias leakage current.

  11. Pitting and Stress Corrosion Cracking Susceptibility of Nanostructured Al-Mg Alloys in Natural and Artificial Environments

    NASA Astrophysics Data System (ADS)

    Sharma, Mala M.; Ziemian, Constance W.

    2008-12-01

    The stress corrosion cracking (SCC) behavior of two developmental nanocrystalline 5083 alloys with varied composition and processing conditions was studied. The results were compared to a commercial aluminum AA 5083 (H111) alloy. The pitting densities, size and depths, and residual tensile strengths were measured after alternate immersion in artificial seawater and atmospheric exposure under different loading conditions. Optical and scanning electron microscopy (SEM) with EDX was used to analyze the fracture surfaces of failed specimen after removal at selected intervals and tensile testing. One of the nanostructured Al-Mg alloys exhibited significantly superior pitting resistance when compared to conventional microstructured AA 5083. Under conditions where pitting corrosion showed up as local tunnels toward phase inclusions, transgranular cracking was observed, whereas under conditions when pitting corrosion evolved along grain boundaries, intergranular cracking inside the pit was observed. Pit initiation resistance of the nano alloys appears to be better than that of the conventional alloys. However, long-term pit propagation is a concern and warrants further study. The objective of this investigation was to obtain information regarding the role that ultra-fine microstructures play in their degradation in marine environments and to provide insight into the corrosion mechanisms and damage processes of these alloys.

  12. Phase Composition and Superplastic Behavior of a Wrought AlCoCrCuFeNi High-Entropy Alloy

    NASA Astrophysics Data System (ADS)

    Shaysultanov, D. G.; Stepanov, N. D.; Kuznetsov, A. V.; Salishchev, G. A.; Senkov, O. N.

    2013-12-01

    A cast AlCoCrCuFeNi high-entropy alloy was multiaxially forged at 950°C to produce a fine homogeneous mixture of grains/particles of four different phases with the average size of ~2.1 μm. The forged alloy exhibited unusual superplastic behavior accompanied by a pronounced softening stage, followed by a steady-state flow stage, during tensile deformation at temperatures of 800°C-1000°C and at strain rates of 10-4-10-1 s-1. Despite the softening stage, no noticeable strain localization was observed and a total elongation of up to 1240% was obtained. A detailed analysis of the phase composition and microstructure of the alloy before and after superplastic deformation was conducted, the strain rate and temperature dependences of the flow stress were determined at different stages of the superplastic deformation, and the relationships between the microstructure and properties were identified and discussed.

  13. Near-net shape processing of spherical high Nb-TiAl alloy powder by gelcasting

    NASA Astrophysics Data System (ADS)

    Shao, Hui-ping; Liu, Xiao-ting; Ji, Ye; Guo, Zhi-meng

    2013-11-01

    Spherical Ti-45Al-8.5Nb-(W,B,Y) alloy powder prepared by an argon plasma process was near-net shape by gelcasting. In the non-aqueous system, methaerylate-2-hydroxy ethyl, toluene, benzoyl peroxide, and N, N-dimethylaniline were used as the monomer, solvent, initiator, and catalyst, respectively. To improve sintering and forming behaviors, many additives were included in the suspension. The concentrated suspension with a solid loading of 70vol% was prepared. The high Nb-TiAl powder was analyzed by electron microscopy and X-ray diffraction. It was found that the green bodies had a smooth surface and homogeneous microstructure, exhibiting a bending strength as high as 50 MPa. After sintering at 1480C for 2 h in vacuum, uniform complex-shaped high Nb-TiAl parts were successfully produced.

  14. A novel amino acid substitution Ala-122-Tyr in ALS confers high-level and broad resistance across ALS-inhibiting herbicides.

    TOXLINE Toxicology Bibliographic Information

    Han H; Yu Q; Purba E; Li M; Walsh M; Friesen S; Powles SB

    2012-08-01

    BACKGROUND: Wild radish, a problem weed worldwide, is a severe dicotyledonous weed in crops. In Australia, sustained reliance on ALS-inhibiting herbicides to control this species has led to the evolution of many resistant populations endowed by any of several ALS mutations. The molecular basis of ALS-inhibiting herbicide resistance in a novel resistant population was studied.RESULTS: ALS gene sequencing revealed a previously unreported substitution of Tyr for Ala at amino acid position 122 in resistant individuals of a wild radish population (WARR30). A purified subpopulation individually homozygous for the Ala-122-Tyr mutation was generated and characterised in terms of its response to the different chemical classes of ALS-inhibiting herbicides. Whole-plant dose-response studies showed that the purified subpopulation was highly resistant to chlorsulfuron, metosulam and imazamox, with LD?? or GR?? R/S ratio of > 1024, > 512 and > 137 respectively. The resistance to imazypyr was found to be relatively moderate (but still substantial), with LD?? and GR?? R/S ratios of > 16 and > 7.8 respectively. In vitro ALS activity assays showed that Ala-122-Tyr ALS was highly resistant to all tested ALS-inhibiting herbicides.CONCLUSION: The molecular basis of ALS-inhibiting herbicide resistance in wild radish population WARR30 was identified to be due to an Ala-122-Tyr mutation in the ALS gene. This is the first report of an amino acid substitution at Ala-122 in the plant ALS that confers high-level and broad-spectrum resistance to ALS-inhibiting herbicides, a remarkable contrast to the known mutation Ala-122-Thr endowing resistance to imidazolinone herbicide.

  15. High temperature electron transport properties in AlGaN/GaN heterostructures

    NASA Astrophysics Data System (ADS)

    Tokuda, H.; Yamazaki, J.; Kuzuhara, M.

    2010-11-01

    Hall electron mobility (?H) and sheet concentration (ns) in AlGaN/GaN heterostructures have been measured from 77 to 1020 K. The effect of the deposited Al2O3 layer is also investigated with varying its thickness. It is found that ?H decreases monotonously with the temperature (T) and its dependence is well approximated with the function of ?H=4.5103 exp(-0.004T) in the temperatures over 350 K. The function is different from the commonly used one of ?H=AT-? (? 1.5), which indicates that the mobility is not only governed by the polar optical phonon scattering but also the deformation potential scattering plays a role. The sheet electron concentration (ns) has a weak dependence on the temperature, that is, slightly decreases with temperature in 300-570 K and increases gradually up to 1020 K. The decrease is explained by considering the reduction in the polarization (probably both spontaneous and piezoelectric) charge and the increase seems to be due to the parallel conduction through the interface between GaN buffer layer and sapphire substrate. The dependence of sheet resistance (Rsh) in AlGaN/GaN is compared with that of n-GaN. In the low temperatures, AlGaN/GaN shows a lower Rsh due to its high mobility, however, at the temperatures higher than 350 K, Rsh of AlGaN/GaN becomes higher than that of n-GaN. This result implies that AlGaN/GaN high-electron-mobility-transistors are inferior to GaN metal-semiconductor field-effect transistors in terms of higher source, drain, and channel resistances at high temperature operations, although further investigations on other performances such as output power and reliability are needed. The Al2O3 deposited AlGaN/GaN shows about 15% higher ns than without Al2O3 layer for the whole temperatures. On the contrary, ?H at 77 K shows a slight decrease with Al2O3 deposition, which degree is not affected by the layer thickness. In the temperatures higher than 400 K, ?H is almost the same for with and without Al2O3 layer.

  16. Preliminary study of the characteristics of a high Mg containing Al-Mg-Si alloy

    NASA Astrophysics Data System (ADS)

    Yan, F.; McKay, B. J.; Fan, Z.; Chen, M. F.

    2012-01-01

    An Al-20Mg-4Si high Mg containing alloy has been produced and its characteristics investigated. The as-cast alloy revealed primary Mg2Si particles evenly distributed throughout an ?-Al matrix with a ?-Al3Mg2 fully divorced eutectic phase observed in interdendritic regions. The Mg2Si particles displayed octahedral, truncated octahedral, and hopper morphologies. Additions of Sb, Ti and Zr had a refining influence reducing the size of the Mg2Si from 52 4 ?m to 25 0.1 ?m, 35 1 ?m and 34 1 ?m respectively. HPDC tensile test samples could be produced with a 0.6 wt.% Mn addition which prevented die soldering. Solution heating for 1 hr was found to dissolve the majority of the Al3Mg2 eutectic phase with no evidence of any effect on the primary Mg2Si. Preliminary results indicate that the heat treatment has a beneficial effect on the elongation and the UTS.

  17. Trap states in AlGaN channel high-electron-mobility transistors

    SciTech Connect

    Zhao, ShengLei; Zhang, Kai; Ha, Wei; Chen, YongHe; Zhang, Peng; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua; School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071

    2013-11-18

    Frequency dependent capacitance and conductance measurements were performed to analyze the trap states in the AlGaN channel high-electron-mobility transistors (HEMTs). The trap state density in the AlGaN channel HEMTs decreases from 1.26 × 10{sup 13} cm{sup −2}eV{sup −1} at the energy of 0.33 eV to 4.35 × 10{sup 11} cm{sup −2}eV{sup −1} at 0.40 eV. Compared with GaN channel HEMTs, the trap states in the AlGaN channel HEMTs have deeper energy levels. The trap with deeper energy levels in the AlGaN channel HEMTs is another reason for the reduction of the reverse gate leakage current besides the higher Schottky barrier height.

  18. High coercivity SmFeAlC thin films fabricated by multilayer sputtering

    SciTech Connect

    Yan, M.L.; Shan, Z.S.; Liu, Y.; Sellmyer, D.J.

    1997-09-01

    SmFeN and SmFeC intermetallic compounds based on the rhombohedral Th{sub 2}Zn{sub 17}-type structure have been attracting much attention as potential candidates for permanent-magnet materials owing to their excellent magnetic properties. Here, multilayer sputtering of SmFe/C(Al) plus appropriate thermal processing has been used to fabricate SmFeC thin films with Al substitution for Fe. It was found that the SmFeAlC thin films exhibited exceptionally high coercivities. A coercivity of 28 kOe was realized for the thin film with structure of Ta(1,000{angstrom})/[SmFe(40{angstrom})/C(Al)(5{angstrom})] {times} 50/Ta(200{angstrom}) with subsequent annealing at 650 C.

  19. Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers

    NASA Astrophysics Data System (ADS)

    Zhang, Kai; Mi, Minhan; Chen, Yonghe; Cao, Mengyi; Wang, Chong; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue

    2013-11-01

    A GaN-based enhancement-mode high electron mobility transistor (HEMT) with a 1.5 nm GaN/9 nm Al0.65Ga0.35N thin barrier was reported. Without any treatment on barrier layer under the gate, the as-grown HEMTs exhibited a threshold voltage of 0.3 V, a maximum drain current density of 441 mA/mm at VGS = 3 V and a peak extrinsic transconductance of 204 mS/mm at VGS = 1.1 V. At the same time, both a low Schottky leakage current and an insignificant surface defects induced current dispersion were observed. Moreover, drain induction barrier lower (DIBL) effect was determined to be merely 3.28 mV/V at 1 mA/mm for a gate length of 0.5 m. Additionally, post-gate annealing experiment at step temperatures up to 450 C was implemented, only causing a minor shift in threshold voltage. These results demonstrated the substantial potential of thin and high Al composition barrier layers for high-voltage and highly reliable enhancement mode operation.

  20. Microstructure, mechanical properties, and high-temperature oxidation resistance of boronized {gamma}-TiAl(Mn)

    SciTech Connect

    Kim, S.; Yoon, Y.; Kim, H.; Park, K.

    1997-12-31

    Titanium aluminide (TiAl) based intermetallic compounds are considered as potential materials for high-performance automobile and aircraft engine components and airframe applications because of their low density (3.8 g/cm{sup 3}), high melting temperature (1,480 C), and good elevated temperature strength retention. To improve the wear and high-temperature oxidation resistance of reactively sintered {gamma}-TiAl(Mn) intermetallic compounds, they were boronized in the temperature range of 900 to 1,100 C for 5 to 11 hours with powder mixtures of B{sub 4}C and Na{sub 2}B{sub 4}O{sub 7}. It was found that the coating layer consisted of three sublayers, i.e., outer, middle, and inner sublayers. The outer, middle, and inner sublayers were identified as a mixture of TiB{sub 2} and TiO{sub 2}, a mixture of Al{sub 2}O{sub 3} and TiO{sub 2}, and Ti-rich TiAl based compounds, respectively. The coating layer significantly improved the surface hardness and the wear and high-temperature oxidation resistances. The highest surface hardness (Hv {approx} 2,720) was obtained at 900 C for 11 hours. This surface hardness is much higher than that of TiAl(Mn) (Hv {approx} 400). In addition, the specimens boronized at both 1,000 and 1,050 C for 9 hours showed an excellent high-temperature oxidation resistance. It is believed that the boronizing on the TiAl(Mn) intermetallics is very effective to improve the wear and high-temperature oxidation resistances.

  1. Achieving reversibility of ultra-high mechanical stress by hydrogen loading of thin films

    NASA Astrophysics Data System (ADS)

    Hamm, M.; Burlaka, V.; Wagner, S.; Pundt, A.

    2015-06-01

    Nano-materials are commonly stabilized by supports to maintain their desired shape and size. When these nano-materials take up interstitial atoms, this attachment to the support induces mechanical stresses. These stresses can be high when the support is rigid. High stress in the nano-material is typically released by delamination from the support or by the generation of defects, e.g., dislocations. As high mechanical stress can be beneficial for tuning the nano-materials properties, it is of general interest to deduce how real high mechanical stress can be gained. Here, we show that below a threshold nano-material size, dislocation formation can be completely suppressed and, when delamination is inhibited, even the ultrahigh stress values of the linear elastic limit can be reached. Specifically, for hydrogen solved in epitaxial niobium films on sapphire substrate supports a threshold film thickness of 6 nm was found and mechanical stress of up to (-10 1) GPa was reached. This finding is of basic interest for hydrogen energy applications, as the hydride stability in metals itself is affected by mechanical stress. Thus, tuning of the mechanical stress-state in nano-materials may lead to improved storage properties of nano-sized materials.

  2. Polymorphic stability of AlAs/GaAs superlattices at high pressure

    NASA Astrophysics Data System (ADS)

    Cui, L. J.; Venkateswaran, U. D.; Weinstein, B. A.; Chambers, F. A.

    1992-04-01

    The pressure-induced ?-? structural transitions in [001]-oriented AlAs/GaAs superlattices (SL's) are studied by Raman scattering using a 300-K diamond-anvil press. The threshold pressures of the forward and reverse transitions in the AlAs and GaAs constituents of each SL are accurately measured for layer thicknesses in the range 300-20 , and comparison is made to the bulk transitions reported in the preceding paper. We obtain direct microscopic evidence that (i) the SL constituents transform separately (first AlAs, then GaAs) or simultaneously, depending on whether the AlAs layers are thicker or thinner than ~50 (ii) overpressing of zinc-blende AlAs by ~5 GPa above its bulk stability limit is not matched by GaAs underpressing: (iii) the postreversal condition of the SL's is marked by increasing signs of bulk and interface disorder as the constituent layer thickness decreases. The AlAs overpressing shows that the effective polymorphic stability of these SL's is GaAs controlled over a wide layer-thickness range. The thermodynamics of high-pressure SL transitions is discussed. We find that the ?-AlAs/?-GaAs sixfold-fourfold interface encountered at high pressure has the empirical energy density ???=0.12+/-0.02 eV/AṦ, and is best described by a disordered-interface model. Comparison to microscopic theory for a pseudomorphic sixfold-fourfold interface shows that the calculated geometry probably does not occur at the static interfaces of AlAs/GaAs SL's, but might exist during transformation at the kinetic boundary of small ? nuclei forming within an ? matrix. Alloylike pressure stability is predicted when the SL periods are substantially thinner than the smallest ? nuclei.

  3. High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

    NASA Astrophysics Data System (ADS)

    Okita, Hideyuki; Kaifu, Katsuaki; Mita, Juro; Yamada, Tomoyuki; Sano, Yoshiaki; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi

    2003-11-01

    Recessed gate AlGaN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate have been fabricated. In order to improve FET performances, we optimized the layer structure and the electrode arrangement of the HEMT, and hence 0.15 m gate-length AlGaN/GaN-HEMTs with recessed gate were successfully fabricated and the obtained transconductance was as high as 450 mS/mm. In this paper we describe the improvement of HEMT layer structures on sapphire substrate, the optimisation of an offset arrangement of gate electrodes, and the results of DC/RF measurements of our HEMTs. (

  4. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Wu, Tian-Li; Marcon, Denis; Bakeroot, Benoit; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Roelofs, Robin; Groeseneken, Guido; Decoutere, Stefaan

    2015-08-01

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-gm), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si3N4, Rapid Thermal Chemical Vapor Deposition Si3N4, and Atomic Layer Deposition (ALD) Al2O3) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (Dit), the amount of border traps, and the threshold voltage (VTH) shift during a positive gate bias stress can be obtained. The results show that the VTH shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the VTH shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract Dit needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the gm dispersion commonly attributed to border traps might be influenced by interface states.

  5. High-pressure modifications of CaZn 2, SrZn 2, SrAl 2, and BaAl 2: Implications for Laves phase structural trends

    NASA Astrophysics Data System (ADS)

    Kal, Subhadeep; Stoyanov, Emil; Belieres, Jean-Philippe; Groy, Thomas L.; Norrestam, Rolf; Hussermann, Ulrich

    2008-11-01

    High-pressure forms of intermetallic compounds with the composition CaZn 2, SrZn 2, SrAl 2, and BaAl 2 were synthesized from CeCu 2-type precursors (CaZn 2, SrZn 2, SrAl 2) and Ba 21Al 40 by multi-anvil techniques and investigated by X-ray powder diffraction (SrAl 2 and BaAl 2), X-ray single-crystal diffraction (CaZn 2), and electron microscopy (SrZn 2). Their structures correspond to that of Laves phases. Whereas the dialuminides crystallize in the cubic MgCu 2 (C15) structure, the dizincides adopt the hexagonal MgZn 2 (C14) structure. This trend is in agreement with the structural relationship displayed by sp bonded Laves phase systems at ambient conditions.

  6. Microstructural stability of AlN diffusion barrier for nanocomposite Ni + CrAlYSiHfN coating on single crystal superalloy at high temperatures

    NASA Astrophysics Data System (ADS)

    Ren, Pan; Zhu, Shenglong; Wang, Fuhui

    2015-12-01

    An AlN interlayer was fabricated by filtered vacuum arc evaporation as a diffusion barrier (DB) between Ni + CrAlYSiHfN composite coating and K417G superalloy. Microstructure changes of the AlN DB were investigated after exposure at 1000 and 1100 C. Amorphous structure was found in the as-deposited AlN DB, which went through crystallization when exposing at high temperature. The AlN DB suppressed interdiffusion between overlayer and substrate effectively after 200 h exposure at both 1000 C and 1100 C. A few substrate element precipitates were observed within the grain boundary of the AlN DB after exposure at 1100 C for 200 h.

  7. Preliminary Thermal Stress Analysis of a High-Pressure Cryogenic Storage Tank

    NASA Technical Reports Server (NTRS)

    Baker, J. Mark

    2003-01-01

    The thermal stresses on a cryogenic storage tank strongly affect the condition of the tank and its ability to withstand operational stresses. These thermal stresses also affect the growth of any surface damage that might occur in the tank walls. These stresses are particularly of concern during the initial cooldown period for a new tank placed into service, and during any subsequent thermal cycles. A preliminary thermal stress analysis of a high-pressure cryogenic storage tank was performed. Stresses during normal operation were determined, as well as the transient temperature distribution. An elastic analysis was used to determine the thermal stresses in the inner wall based on the temperature data. The results of this elastic analysis indicate that the inner wall of the storage tank will experience thermal stresses of approximately 145,000 psi (1000 MPa). This stress level is well above the room-temperature yield strength of 304L stainless steel, which is about 25,000 psi (170 MPa). For this preliminary analysis, several important factors have not yet been considered. These factors include increased strength of 304L stainless steel at cryogenic temperatures, plastic material behavior, and increased strength due to strain hardening. In order to more accurately determine the thermal stresses and their affect on the tank material, further investigation is required, particularly in the area of material properties and their relationship to stress.

  8. Effects of Electromagnetic Stirring on the Microstructure and High-Temperature Mechanical Properties of a Hyper-eutectic Al-Si-Cu-Ni Alloy

    NASA Astrophysics Data System (ADS)

    Jang, Youngsoo; Choi, Byounghee; Kang, Byungkeun; Hong, Chun Pyo

    2015-02-01

    A liquid treatment method by electromagnetic stirring was applied to a hyper-eutectic Al-15wt pctSi-4wt pctCu-3wt pctNi alloy for the piston manufacturing with diecasting process in order to improve high-temperature mechanical properties of the piston heads. The mechanical properties, such as hardness, high-temperature tensile stress, thermal expansion, and high-temperature relative wear resistance, were estimated using the specimens taken from the liquid-treated diecast products, and the results were compared with those of a conventional metal-mold-cast piston.

  9. High-fat diet selectively protects against the effects of chronic social stress in the mouse.

    PubMed

    Finger, B C; Dinan, T G; Cryan, J F

    2011-09-29

    Obesity and stress-related psychiatric disorders are frequently comorbid. However, our understanding of the relationship between diet, everyday life stress and psychiatric disorders is limited. Although the ability of stress to increase the likelihood to develop obesity and its comorbidities in a feed-forward loop has been studied there is a dearth of studies especially at the behavioural level investigating the feedback hypothesis, that is, the consequences of high-fat diet consumption on chronic stress-induced alterations. The effects of unpredictable chronic psychosocial stress on anxiety-like behaviour in the light-dark box, depressive-like behaviour in the forced swim test, hedonic behaviour in the female urine sniffing test and social avoidance in the social interaction test were investigated in a mouse model of diet-induced obesity. Changes in plasma levels of leptin, insulin and corticosterone were also assessed. A clear dissociation in behaviours was observed in mice subjected to diet-induced obesity coupled with chronic stress, with anxiety- and depressive-like behaviour observed in mice on a low- but not on a high-fat diet exposed to chronic social stress. On the other hand, social avoidance and anhedonic behaviour was present following stress independent of diet. Moreover, the effect of chronic stress in lowering leptin levels was most apparent in mice on a high-fat diet. Plasma insulin levels however where only decreased in mice on high- but not low-fat diet. In conclusion, long-term exposure to high-fat diet selectively and robustly protects against some of the behavioural sequelae of chronic unpredictable social stressors. These data show that there is a clear discrimination in the nature of stress-induced behavioural effects sensitive to protection by high-fat diet. Moreover, these results illustrate the strong influence of dietary components on stress-induced psychological factors and thereby emphasize the importance of the brain-gut-axis as a point of future therapeutic intervention. PMID:21742017

  10. Ultrasonic elastic wave velocity measurements of polycrystalline MgAl2O4 spinel at high pressure and high temperature

    NASA Astrophysics Data System (ADS)

    Irifune, T.; Zou, Y.; Greaux, S.; Zhou, C.; Whitaker, M. L.; Higo, Y.; Li, B.

    2012-12-01

    Magnesium aluminate (MgAl2O4) spinel is considered an important functional/structural material widely used at extreme conditions, due to its good mechanical strength, high resistance to chemical attack, good stability, and excellent optical and dielectric properties. Moreover, MgAl2O4 spinel also plays a significant role in geophysics as an important rock-forming mineral, which constitutes peridotites from the uppermost of the Earth's mantle. Therefore, understanding the elasticity and sound velocities of MgAl2O4 spinel are of great interest in the fields ranging from materials physics to geophysics by various experimental techniques. Previous experimental studies on MgAl2O4 spinel were carried out either at high temperature or high temperature. To date, there are no direct measurements of the elastic wave velocities of MgAl2O4 spinel at simultaneous high-pressure and high-temperature conditions. Recently, elasticity and sound velocities of polycrystalline MgAl2O4 spinel have been firstly measured up to 14 GPa and 900 K using ultrasonic interferometry in conjunction with energy-dispersive synchrotron X-ray diffraction. It is found that compressional wave velocity (VP) increases with pressure and decreases with temperature, whereas the shear wave velocity (VS) decreases with both pressure and temperature. Two-dimensional linear fittings of the present data give: KS0 =195 (1) GPa, dKs/dP = 4.4(1), dKs/dT = -0.023(1) GPa/K, G0 = 108(1) GPa, dG/dP = 0.38(1), dG/dT = -0.014(1) GPa/K. Moreover, the bulk modulus (KS) exhibits obvious increase with pressure, while the shear modulus (G) shows a weak variation with pressure, which may be due to the shear deformation relaxation by the coupling between atomic displacements and shear strains.

  11. High novelty-seeking rats are resilient to negative physiological effects of the early life stress.

    PubMed

    Clinton, Sarah M; Watson, Stanley J; Akil, Huda

    2014-01-01

    Exposure to early life stress dramatically impacts adult behavior, physiology, and neuroendocrine function. Using rats bred for novelty-seeking differences and known to display divergent anxiety, depression, and stress vulnerability, we examined the interaction between early life adversity and genetic predisposition for high- versus low-emotional reactivity. Thus, bred Low Novelty Responder (bLR) rats, which naturally exhibit high anxiety- and depression-like behavior, and bred High Novelty Responder (bHR) rats, which show low anxiety/depression together with elevated aggression, impulsivity, and addictive behavior, were subjected to daily 3?h maternal separation (MS) stress postnatal days 1-14. We hypothesized that MS stress would differentially impact adult bHR/bLR behavior, physiology (stress-induced defecation), and neuroendocrine reactivity. While MS stress did not impact bHR and bLR anxiety-like behavior in the open field test and elevated plus maze, it exacerbated bLRs' already high physiological response to stress - stress-induced defecation. In both tests, MS bLR adult offspring showed exaggerated stress-induced defecation compared to bLR controls while bHR offspring were unaffected. MS also selectively impacted bLRs' (but not bHRs') neuroendocrine stress reactivity, producing an exaggerated corticosterone acute stress response in MS bLR versus control bLR rats. These findings highlight how genetic predisposition shapes individuals' response to early life stress. Future work will explore neural mechanisms underlying the distinct behavioral and neuroendocrine consequences of MS in bHR/bLR animals. PMID:24090131

  12. High Novelty-Seeking Rats Are Resilient to Negative Physiological Effects of the Early Life Stress

    PubMed Central

    Clinton, Sarah M.; Watson, Stanley J.; Akil, Huda

    2014-01-01

    Exposure to early life stress dramatically impacts adult behavior, physiology, and neuroendocrine function. Using rats bred for novelty-seeking differences and known to display divergent anxiety, depression, and stress vulnerability, we examined the interaction between early life adversity and genetic predisposition for high- versus low-emotional reactivity. Thus, bred Low Novelty Responder (bLR) rats, which naturally exhibit high anxiety- and depression-like behavior, and bred High Novelty Responder (bHR) rats, which show low anxiety/depression together with elevated aggression, impulsivity, and addictive behavior, were subjected to daily 3 h maternal separation (MS) stress postnatal days 1–14. We hypothesized that MS stress would differentially impact adult bHR/bLR behavior, physiology (stress-induced defecation), and neuroendocrine reactivity. While MS stress did not impact bHR and bLR anxiety-like behavior in the open field test and elevated plus maze, it exacerbated bLRs’ already high physiological response to stressstress-induced defecation. In both tests, MS bLR adult offspring showed exaggerated stress-induced defecation compared to bLR controls while bHR offspring were unaffected. MS also selectively impacted bLRs’ (but not bHRs’) neuroendocrine stress reactivity, producing an exaggerated corticosterone acute stress response in MS bLR versus control bLR rats. These findings highlight how genetic predisposition shapes individuals’ response to early life stress. Future work will explore neural mechanisms underlying the distinct behavioral and neuroendocrine consequences of MS in bHR/bLR animals. PMID:24090131

  13. Secondary Al-Si-Mg High-pressure Die Casting Alloys with Enhanced Ductility

    NASA Astrophysics Data System (ADS)

    Bsch, Dominik; Pogatscher, Stefan; Hummel, Marc; Fragner, Werner; Uggowitzer, Peter J.; Gken, Mathias; Hppel, Heinz Werner

    2015-03-01

    Al-Si-Mg-based secondary cast alloys are attractive candidates for thin-walled high-pressure die castings for applications in the transport industry. The present study investigates the effect of manganese additions at high cooling rates on microstructure, mechanical properties, and on the dominating fracture mechanisms of alloy AlSi10Mg with an elevated iron concentration. Systematic variations of the Mn content from 0.20 to 0.85 wt pct at a constant Fe content of 0.55 wt pct illustrate the key changes in type, phase fraction, and shape of the Fe-containing intermetallic phases, and the corresponding influence on the alloy's ductility. For high-pressure die casting (HPDC), an optimal range of the Mn content between 0.40 and 0.60 wt pct, equivalent to a Mn/Fe ratio of approximately 1, has been identified. At these Mn and Fe contents, the high cooling rates obtained in HPDC result in the formation of fine and homogeneously distributed ?-Al15(Fe,Mn)3Si2 phase, and crack initiation is transferred from AlFeSi intermetallics to eutectic silicon. The study interprets the microstructure-property relationship in the light of thermodynamic calculations which reveal a significant increase in undercooling of the ?-Al15(Fe,Mn)3Si2 phase with increased Mn content. It concludes that the interdependence of the well-defined Mn/Fe ratio and the high cooling rate in HPDC can generate superior ductility in secondary AlSi10Mg cast alloys.

  14. High-intensity acoustic tests of a thermally stressed plate

    NASA Technical Reports Server (NTRS)

    Ng, Chung Fai; Clevenson, Sherman A.

    1991-01-01

    An investigation was conducted in the Thermal Acoustic Fatigue Apparatus at the Langley Research Center to study the acoustically excited random motion of an aluminum plate which is buckled due to thermal stresses. The thermal buckling displacements were measured and compared with theory. The general trends of the changes in resonances frequencies and random responses of the plate agree with previous theoretical prediction and experimental results for a mechanically buckled plate.

  15. Unraveling the Origin of Structural Disorder in High Temperature Transition Al2O3: Structure of θ-Al2O3

    SciTech Connect

    Kovarik, Libor; Bowden, Mark E.; Shi, Dachuan; Washton, Nancy M.; Anderson, Amity; Hu, Jian Z.; Lee, Jaekyoung; Szanyi, Janos; Kwak, Ja Hun; Peden, Charles HF

    2015-09-22

    The crystallography of transition Al2O3 has been extensively studied in the past due to the advantageous properties of the oxide in catalytic and a range of other technological applications. However, existing crystallographic models are insufficient to describe the structure of many important Al2O3 polymorphs due to their highly disordered nature. In this work, we investigate structure and disorder in high-temperature treated transition Al2O3, and provide a structural description for θ-Al2O3 by using a suite of complementary imaging, spectroscopy and quantum calculation techniques. Contrary to current understanding, our high-resolution imaging shows that θ-Al2O3 is a disordered composite phase of at least two different end members. By correlating imaging and spectroscopy results with DFT calculations, we propose a model that describes θ-Al2O3 as a disordered intergrowth of two crystallographic variants at the unit cell level. One variant is based on β-Ga2O3, and the other on a monoclinic phase that is closely-related to δ-Al2O3. The overall findings and interpretations afford new insight into the origin of poor crystallinity in transition Al2O3, and also provide new perspectives on structural complexity that can emerge from intergrowth of closely related structural polymorphs.

  16. Probing the electronic and vibrational structure of Au2Al2- and Au2Al2 using photoelectron spectroscopy and high resolution photoelectron imaging

    NASA Astrophysics Data System (ADS)

    Lopez, Gary V.; Czekner, Joseph; Jian, Tian; Li, Wei-Li; Yang, Zheng; Wang, Lai-Sheng

    2014-12-01

    The electronic and vibrational structures of Au2Al2- and Au2Al2 have been investigated using photoelectron spectroscopy (PES), high-resolution photoelectron imaging, and theoretical calculations. Photoelectron spectra taken at high photon energies with a magnetic-bottle apparatus reveal numerous detachment transitions and a large energy gap for the neutral Au2Al2. Vibrationally resolved PE spectra are obtained using high-resolution photoelectron imaging for the ground state detachment transition of Au2Al2- at various photon energies (670.55-843.03 nm). An accurate electron affinity of 1.4438(8) eV is obtained for the Au2Al2 neutral cluster, as well as two vibrational frequencies at 57 ± 8 and 305 ± 13 cm-1. Hot bands transitions yield two vibrational frequencies for Au2Al2- at 57 ± 10 and 144 ± 12 cm-1. The obtained vibrational and electronic structure information is compared with density functional calculations, unequivocally confirming that both Au2Al2- and Au2Al2 possess C2v tetrahedral structures.

  17. Advances in processing of NiAl intermetallic alloys and composites for high temperature aerospace applications

    NASA Astrophysics Data System (ADS)

    Bochenek, Kamil; Basista, Michal

    2015-11-01

    Over the last few decades intermetallic compounds such as NiAl have been considered as potential high temperature structural materials for aerospace industry. A large number of investigations have been reported describing complex fabrication routes, introducing various reinforcing/alloying elements along with theoretical analyses. These research works were mainly focused on the overcoming of main disadvantage of nickel aluminides that still restricts their application range, i.e. brittleness at room temperature. In this paper we present an overview of research on NiAl processing and indicate methods that are promising in solving the low fracture toughness issue at room temperature. Other material properties relevant for high temperature applications are also addressed. The analysis is primarily done from the perspective of NiAl application in aero engines in temperature regimes from room up to the operating temperature (over 1150 °C) of turbine blades.

  18. NiAl sintered under high pressure and at low temperature

    SciTech Connect

    Cheng, T.; Sun, J.

    1994-01-15

    Since NiAl, with an ordered B2 structure, shows many favorable properties for high temperature structural applications, various processes, such as rapid solidification, mechanical alloying, Bridgman single crystal growth, reaction sintering (RS), hot pressure reaction sintering, and reaction hot isostatic pressure (RHIP), have been employed in recent years to manufacture the intermetallic and its composite for improving the mechanical properties. In the present work, the stoichiometric and nickel-rich NiAl are manufactured employing a new high pressure reaction sintering (HPRS) process under a pressure up to 2GPa and lower sintering temperature down to 500 C. NiAl microstructures and microhardness, and compressive mechanical properties at room temperature are reported in this paper.

  19. Rhombohedral AlPt films formed by self-propagating, high temperature synthesis.

    SciTech Connect

    Adams, David Price; Rodriguez, Mark Andrew; Kotula, Paul Gabriel

    2005-11-01

    High-purity AlPt thin films prepared by self-propagating, high temperature combustion synthesis show evidence for a new rhombohedral phase. Sputter deposited Al/Pt multilayers of various designs are reacted at different rates in air and in vacuum, and each form a new trigonal/hexagonal aluminide phase with unit cell parameters a = 15.571(8) {angstrom}, c = 5.304(1) {angstrom}, space group R-3 (148), and Z, the number of formula units within a unit cell, = 39. The lattice is isostructural to that of the AlPd R-3 lattice as reported by Matkovic and Schubert (Matkovic, 1977). Reacted films have a random in-plane crystallographic texture, a modest out-of-plane (001) texture, and equiaxed grains with dimensions on the order of film thickness.

  20. Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

    SciTech Connect

    Chang, Yu-Chi; Wang, Yeong-Her

    2015-03-23

    Using the biomaterial of Al-chelated gelatin (ACG) prepared by sol-gel method in the ITO/ACG/ITO structure, a highly transparent resistive random access memory (RRAM) was obtained. The transmittance of the fabricated device is approximately 83% at 550 nm while that of Al/gelatin/ITO is opaque. As to the ITO/gelatin/ITO RRAM, no resistive switching behavior can be seen. The ITO/ACG/ITO RRAM shows high ON/OFF current ratio (>10{sup 5}), low operation voltage, good uniformity, and retention characteristics at room temperature and 85 °C. The mechanism of the ACG-based memory devices is presented. The enhancement of these electrical properties can be attributed to the chelate effect of Al ions with gelatin. Results show that transparent ACG-based memory devices possess the potential for next-generation resistive memories and bio-electronic applications.

  1. -Based Mold Flux Used for High Al-TRIP Steel Casting

    NASA Astrophysics Data System (ADS)

    Zhao, Huan; Wang, Wanlin; Zhou, Lejun; Lu, Boxun; Kang, Youn-Bae

    2014-08-01

    An investigation was carried out to study the effect of MnO on crystallization, melting, and heat transfer of lime-alumina-based mold flux used for high Al-TRIP steel casting, through applying the infrared emitter technique (IET) and the double hot thermocouple technique (DHTT). The results of IET tests showed that MnO could improve the general heat transfer rate through promoting the melting and inhibiting the crystallization of mold flux; meanwhile the radiative heat flux was being attenuated. DHTT experiments indicated that the crystallization fraction, melting temperature of mold flux decreased with the addition of MnO. The results of this study can further elucidate the properties of the CaO-Al2O3 slag system and reinforce the basis for the application of lime-alumina system mold fluxes for casting high Al steels.

  2. Amorphous and nanocrystalline phase formation in highly-driven Al-based binary alloys

    SciTech Connect

    Kalay, Yunus Eren

    2008-10-15

    Remarkable advances have been made since rapid solidification was first introduced to the field of materials science and technology. New types of materials such as amorphous alloys and nanostructure materials have been developed as a result of rapid solidification techniques. While these advances are, in many respects, ground breaking, much remains to be discerned concerning the fundamental relationships that exist between a liquid and a rapidly solidified solid. The scope of the current dissertation involves an extensive set of experimental, analytical, and computational studies designed to increase the overall understanding of morphological selection, phase competition, and structural hierarchy that occurs under far-from equilibrium conditions. High pressure gas atomization and Cu-block melt-spinning are the two different rapid solidification techniques applied in this study. The research is mainly focused on Al-Si and Al-Sm alloy systems. Silicon and samarium produce different, yet favorable, systems for exploration when alloyed with aluminum under far-from equilibrium conditions. One of the main differences comes from the positions of their respective T{sub 0} curves, which makes Al-Si a good candidate for solubility extension while the plunging T{sub 0} line in Al-Sm promotes glass formation. The rapidly solidified gas-atomized Al-Si powders within a composition range of 15 to 50 wt% Si are examined using scanning and transmission electron microscopy. The non-equilibrium partitioning and morphological selection observed by examining powders at different size classes are described via a microstructure map. The interface velocities and the amount of undercooling present in the powders are estimated from measured eutectic spacings based on Jackson-Hunt (JH) and Trivedi-Magnin-Kurz (TMK) models, which permit a direct comparison of theoretical predictions. For an average particle size of 10 {micro}m with a Peclet number of {approx}0.2, JH and TMK deviate from each other. This deviation indicates an adiabatic type solidification path where heat of fusion is reabsorbed. It is interesting that this particle size range is also consistent with the appearance of a microcellular growth. While no glass formation is observed within this system, the smallest size powders appear to consist of a mixture of nanocrystalline Si and Al. Al-Sm alloys have been investigated within a composition range of 34 to 42 wt% Sm. Gas atomized powders of Al-Sm are investigated to explore the morphological and structural hierarchy that correlates with different degrees of departure from full equilibrium conditions. The resultant powders show a variety of structural selection with respect to amount of undercooling, with an amorphous structure appearing at the highest cooling rates. Because of the chaotic nature of gas atomization, Cu-block melt-spinning is used to produce a homogeneous amorphous structure. The as-quenched structure within Al-34 to 42 wt% Sm consists of nanocrystalline fcc-Al (on the order of 5 nm) embedded in an amorphous matrix. The nucleation density of fcc-Al after initial crystallization is on the order of 10{sup 22}-10{sup 23} m{sup -3}, which is 10{sup 5}-10{sup 6} orders of magnitude higher than what classical nucleation theory predicts. Detailed analysis of liquid and as-quenched structures using high energy synchrotron X-ray diffraction, high energy transmission electron microscopy, and atom probe tomography techniques revealed an Al-Sm network similar in appearance to a medium range order (MRO) structure. A model whereby these MRO clusters promote the observed high nucleation density of fcc-Al nanocrystals is proposed. The devitrification path was identified using high temperature, in-situ, high energy synchrotron X-ray diffraction techniques and the crystallization kinetics were described using an analytical Johnson-Mehl-Avrami (JMA) approach.

  3. Overexpression of monoubiquitin improves photosynthesis in transgenic tobacco plants following high temperature stress.

    PubMed

    Tian, Fengxia; Gong, Jiangfeng; Zhang, Jin; Feng, Yanan; Wang, Guokun; Guo, Qifang; Wang, Wei

    2014-09-01

    The ubiquitin/26S proteasome system (Ub/26S) is implicated in abiotic stress responses in plants. In this paper, transgenic tobacco plants overexpressing Ta-Ub2 from wheat were used to study the functions of Ub in the improvement of photosynthesis under high temperature (45°C) stress. We observed higher levels of Ub conjugates in transgenic plants under high temperature stress conditions compared to wild type (WT) as a result of the constitutive overexpression of Ta-Ub2, suggesting increased protein degradation by the 26S proteasome system under high temperature stress. Overexpressing Ub increased the photosynthetic rate (Pn) of transgenic tobacco plants, consistent with the improved ATPase activity in the thylakoid membrane and enhanced efficiency of PSII photochemistry. The higher D1 protein levels following high temperature stress in transgenic plants than WT were also observed. These findings imply that Ub may be involved in tolerance of photosynthesis to high temperature stress in plants. Compared with WT, the transgenic plants showed lower protein carbonylation and malondialdehyde (MDA) levels, less reactive oxygen species (ROS) accumulation, but higher antioxidant enzyme activity under high temperature stress. These findings suggest that the improved antioxidant capacity of transgenic plants may be one of the most important mechanisms underlying Ub-regulated high temperature tolerance. PMID:25113454

  4. High temperature properties of equiatomic FeAl with ternary additions

    NASA Technical Reports Server (NTRS)

    Titran, R. H.; Vedula, K. M.; Anderson, G. G.

    1985-01-01

    The aluminide intermetallic compounds are considered potential structural materials for aerospace applications. The B2 binary aluminide FeAl has a melting point in excess of 1500 K, is of simple cubic structure, exists over a wide range of composition with solubility for third elements and is potentially self-protecting in extreme environments. The B2 FeAl compound has been alloyed with 1 to 5 at. pct ternary additions of Si, Ti, Zr, Hf, Cr, Ni, Co, Nb, Ta, Mo, W, and Re. The alloys were prepared by blending a third elemental powder with pre-alloyed binary FeAl powder. Consolidation was by hot extrusion at 1250 K. Annealing studies on the extruded rods showed that the third element addition can be classified into three categories based upon the amount of homogenization and the extent of solid solutioning. Constant strain rate compression tests were performed to determine the flow stress as a function of temperature and composition. The mechanical strength behavior was dependent upon the third element homogenization classification.

  5. High temperature properties of equiatomic FeAl with ternary additions

    NASA Technical Reports Server (NTRS)

    Titran, R. H.; Vedula, K. M.; Anderson, G. G.

    1984-01-01

    The aluminide intermetallic compounds are considered potential structural materials for aerospace applications. The B2 binary aluminide FeAl has a melting point in excess of 1500 K, is of simple cubic structure, exits over a wide range of composition with solubility for third elements and is potentially self-protecting in extreme environments. The B2 FeAl compound has been alloyed with 1 to 5 at % ternary additions of Si, Ti, Zr, Hf, Cr, Ni, Co, Nb, Ta, Mo, W, and Re. The alloys were prepared by blending a third elemental powder with prealloyed binary FeAl powder. Consolidation was by hot extrusion at 1250 K. Annealing studies on the extruded rods showed that the third element addition can be classified into three categories based upon the amount of homogenization and the extent of solid solutioning. Constant strain rate compression tests were performed to determine the flow stress as a function of temperature and composition. The mechanical strength behavior was dependent upon the third element homogenization classification.

  6. Stress and success: individual differences in the glucocorticoid stress response predict behavior and reproductive success under high predation risk.

    PubMed

    Vitousek, Maren N; Jenkins, Brittany R; Safran, Rebecca J

    2014-11-01

    A fundamental element of how vertebrates respond to stressors is by rapidly elevating circulating glucocorticoid hormones. Individual variation in the magnitude of the glucocorticoid stress response has been linked with reproductive success and survival. But while the adaptive value of this response is believed to stem in part from changes in the expression of hormone-mediated behaviors, it is not clear how the behavior of stronger and weaker glucocorticoid responders differs during reproduction, or during exposure to ecologically relevant stressors. Here we report that in a population of barn swallows (Hirundo rustica erythrogaster) experiencing high rates of nest predation, circulating levels of corticosterone (the primary avian glucocorticoid) during exposure to a standardized stressor predict aspects of subsequent behavior and fitness. Individuals that mounted a stronger corticosterone stress response during the early reproductive period did not differ in clutch size, but fledged fewer offspring. Parents with higher stress-induced corticosterone during the early reproductive period later provisioned their nestlings at lower rates. Additionally, in the presence of a model predator stress-induced corticosterone was positively associated with the latency to return to the nest, but only among birds that were observed to return. Model comparisons revealed that stress-induced hormones were better predictors of the behavioral and fitness effects of exposure to transient, ecologically relevant stressors than baseline corticosterone. These findings are consistent with functional links between individual variation in the hormonal and behavioral response to stressors. If such links occur, then selection on the heritable components of the corticosterone stress response could promote adaptation to novel environments or predation regimes. PMID:25461975

  7. Stress-Strain Behaviors Simulation of High Chromium Steel at Elevated Temperatures

    NASA Astrophysics Data System (ADS)

    Liu, Ligang; Li, Qiang; Liao, Bo; Gao, Yukui; Wang, Yuhui; Ren, Xuejun; Yang, Qingxiang

    2010-10-01

    It is important but difficult to study the constitutive equations describing the mechanical properties of steels. In this work, a thermal/mechanical simulator was used in conjunction with the Anand model to obtain the stress-strain curves for a high chromium steel associated with different temperature/strain rate pairs. The finite element software, ANSYS, was used to simulate the stress-strain behavior of a high chromium steel during casting at the strain rates of 1, 0.1, and 0.01 1/s, and to validate the Anand model. The results show that the high-temperature deformation is mainly plastic and the von Mises stresses are small, the stresses introduced at elevated temperatures have little effect on the residual stress fields, and the simulation of the mechanical behavior of steels using an elastic-plastic model at low temperatures during cooling is acceptable.

  8. High-Temperature Thermometer Using Cr-Doped GdAlO3 Broadband Luminescence

    NASA Technical Reports Server (NTRS)

    Eldridge, Jeffrey; Chambers, Matthew

    2011-01-01

    A new concept has been developed for a high-temperature luminescence-based optical thermometer that both shows the desired temperature sensitivity in the upper temperature range of present state-of-the-art luminescence thermometers (above 1,300 C), while maintaining substantial stronger luminescence signal intensity that will allow these optical thermometers to operate in the presence of the high thermal background radiation typical of industrial applications. This objective is attained by using a Cr-doped GdAlO3 (Cr:GdAlO3) sensor with an orthorhombic perovskite structure, resulting in broadband luminescence that remains strong at high temperature due to the favorable electron energy level spacing of Cr:GdAlO3. The Cr:GdAlO3 temperature (and pressure) sensor can be incorporated into, or applied onto, a component s surface when a non-contact surface temperature measurement is desired, or alternatively, the temperature sensor can be attached to the end of a fiber-optic probe that can then be positioned at the location where the temperature measurement is desired. In the case of the fiber-optic probe, both the pulsed excitation and the luminescence emission travel through the fiber-optic light guide. In either case, a pulsed light source provides excitation of the luminescence, and the broadband luminescence emission is collected. Real-time temperature measurements are obtain ed using a least-squares fitting algorithm that determines the luminescence decay time, which has a known temperature dependence established by calibration. Due to the broad absorption and emission bands for Cr:GdAlO3, there is considerable flexibility in the choice of excitation wavelength and emission wavelength detection bands. The strategic choice of the GdAlO3 host is based on its high crystal field, phase stability, and distorted symmetry at the Cr3+ occupation sites. The use of the broadband emission for temperature sensing at high temperatures is a key feature of the invention and is novel since broadband luminescence emission normally shows severe thermal quenching. The tightly bound AlO6 octahedra in GdAlO3 results in a larger energy barrier to nonradiative decays than in other materials and therefore makes using broadband emission for temperature sensing possible at high temperatures. This approach results in a substantial increase in temperature capability. For example, the most commonly used Cr-doped crystal used for luminescence-based temperature measurements, ruby, has only been demonstrated up to 600 C, whereas the Cr:GdAlO3 optical thermometer under development has already been shown to exhibit useful luminescence up to 1,300 C. Because GdAlO3 is non-reactive and is stable in harsh, high-temperature environments, sensors composed of Cr:GdAlO3 will be very well suited for remote high-temperature measurements in engine or industrial environments where its intense high-temperature luminescence will stand out above significant thermal radiation background levels.

  9. High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

    NASA Astrophysics Data System (ADS)

    Wang, Wenbo; Mayrhofer, Patrick M.; He, Xingli; Gillinger, Manuel; Ye, Zhi; Wang, Xiaozhi; Bittner, Achim; Schmid, Ulrich; Luo, J. K.

    2014-09-01

    AlN and AlScN thin films with 27% scandium (Sc) were synthesized by DC magnetron sputtering deposition and used to fabricate surface acoustic wave (SAW) devices. Compared with AlN-based devices, the AlScN SAW devices exhibit much better transmission properties. Scandium doping results in electromechanical coupling coefficient, K2, in the range of 2.0% 2.2% for a wide normalized thickness range, more than a 300% increase compared to that of AlN-based SAW devices, thus demonstrating the potential applications of AlScN in high frequency resonators, sensors, and high efficiency energy harvesting devices. The coupling coefficients of the present AlScN based SAW devices are much higher than that of the theoretical calculation based on some assumptions for AlScN piezoelectric material properties, implying there is a need for in-depth investigations on the material properties of AlScN.

  10. Micromachined stress-free TSV hole for AlGaN/GaN-on-Si (1?1?1) platform-based devices

    NASA Astrophysics Data System (ADS)

    Ko, Sang Choon; Min, Byoung-Gue; Park, Young-Rak; Kim, Jung-Jin; Sung, Ho Kun; Mun, Jae Kyoung; Nam, Eun Soo

    2013-03-01

    This paper presents a micromachined stress-free through silicon via (TSV) backend process for AlGaN/GaN-on-Si (1?1?1) platform-based devices, which was processed by assisted back grinding, chemical mechanical polishing, deep reactive ion etching (DRIE) and copper (Cu) electroplating for the TSV. The metal-filled TSV structure was formed to enhance thermal conduction from the frontend terminal to the backend terminal, especially the source region of the AlGaN/GaN-on-Si (1?1?1) platform-based RF power devices. At the end of a stress-free TSV dry etching process, we have changed RF power 600 W to 300 W to minimize thermal stress of the fabricated TSV electrode pad structure of the AlGaN/GaN-on-Si platform-based devices. Additionally, we have sputtered a multi-metal layer and electroplated Cu metal to interconnect a topside electrode to TSV. To protect the thinned TSV electrode pad structure from water pressure in a sawing process, we have covered photoresist (AZ4330RS) of 3.3 m thickness on the top area of the structures. We confirmed that the proposed TSV formation method assisted by low-power operation DRIE and protection of the thinned TSV surface by using the thick photoresist is very effective to create minimally stressed TSV structures in AlGaN/GaN-on-Si platform-based devices. The improvement was proved by the yield of dice without bursting the pad structures on a 4 inch AlGaN/GaN-on-Si wafer.

  11. Improved Stress Corrosion Cracking Resistance and Strength of a Two-Step Aged Al-Zn-Mg-Cu Alloy Using Taguchi Method

    NASA Astrophysics Data System (ADS)

    Lin, Lianghua; Liu, Zhiyi; Ying, Puyou; Liu, Meng

    2015-12-01

    Multi-step heat treatment effectively enhances the stress corrosion cracking (SCC) resistance but usually degrades the mechanical properties of Al-Zn-Mg-Cu alloys. With the aim to enhance SCC resistance as well as strength of Al-Zn-Mg-Cu alloys, we have optimized the process parameters during two-step aging of Al-6.1Zn-2.8Mg-1.9Cu alloy by Taguchi's L9 orthogonal array. In this work, analysis of variance (ANOVA) was performed to find out the significant heat treatment parameters. The slow strain rate testing combined with scanning electron microscope and transmission electron microscope was employed to study the SCC behaviors of Al-Zn-Mg-Cu alloy. Results showed that the contour map produced by ANOVA offered a reliable reference for selection of optimum heat treatment parameters. By using this method, a desired combination of mechanical performances and SCC resistance was obtained.

  12. Improved Stress Corrosion Cracking Resistance and Strength of a Two-Step Aged Al-Zn-Mg-Cu Alloy Using Taguchi Method

    NASA Astrophysics Data System (ADS)

    Lin, Lianghua; Liu, Zhiyi; Ying, Puyou; Liu, Meng

    2015-11-01

    Multi-step heat treatment effectively enhances the stress corrosion cracking (SCC) resistance but usually degrades the mechanical properties of Al-Zn-Mg-Cu alloys. With the aim to enhance SCC resistance as well as strength of Al-Zn-Mg-Cu alloys, we have optimized the process parameters during two-step aging of Al-6.1Zn-2.8Mg-1.9Cu alloy by Taguchi's L9 orthogonal array. In this work, analysis of variance (ANOVA) was performed to find out the significant heat treatment parameters. The slow strain rate testing combined with scanning electron microscope and transmission electron microscope was employed to study the SCC behaviors of Al-Zn-Mg-Cu alloy. Results showed that the contour map produced by ANOVA offered a reliable reference for selection of optimum heat treatment parameters. By using this method, a desired combination of mechanical performances and SCC resistance was obtained.

  13. Fabrication of Highly-Oleophobic and Superhydrophobic Surfaces on Microtextured al Substrates

    NASA Astrophysics Data System (ADS)

    Liu, Changsong; Zhou, Jigen; Zheng, Dongmei; Wan, Yong; Li, Zhiwen

    2011-06-01

    Theoretical calculations suggest that creating highly-oleophobic surfaces would require a surface energy lower than that of any known materials. In the present work, we demonstrate microtextured Al substrate surfaces with veins-like micro/nanostructures displaying apparent contact angles (CA) greater than 120, even with nitromethane (surface tension ?1 = 37 mN/m). The Al substrate was microtextured by a chemical solution mixed by zinc nitrate hexahydrate, hexamethyltetramine and a little of hydrofluoric acid. A fluoroalkylsilane (FAS) agent was used to tune the surface wettability. The Al substrates were microtextured by veins-like micro/nanostructures and generating a solid-liquid-vapor composite interface. Combination with FAS modification, the Al surfaces resulted in an oleophobicity with CA for nitromethane was 126.3 (152.7 for diethylene glycol, ?1 = 45.2 mN/m). In addition, the Al surfaces demonstrated a low rolling-off angle with < 6 even for diethylene glycol. However, nitromethane droplet favored to pin on the sample surface even the sample stage is tilted to 90. It is noted that this highly-oleophobic behavior is induced mainly by topography, which form a composite surface of air and solid with oil drop sitting partially on air. The results are expected to promote the study on self-cleaning applications, especially in the condition with oil contaminations.

  14. Residual Stress Distribution of 600MPa Grade High Tensile Strength Steel Pipe Using Welding fe Simulation

    NASA Astrophysics Data System (ADS)

    Chang, Kyong-Ho; Jang, Gab-Chul

    2011-06-01

    This paper aims to determine the residual stress distribution of 600MPa grade high tensile strength steel pipe (STKT590) by girth welding. Welding FE simulation is achieved considering temperature dependent physical constants and mechanical properties, obtained by the temperature elevated tensile tests. Comparative analyses clarify the characteristics of residual stress profile near weld joint of STKT590 pipe.

  15. A Highly Accurate Stress Measurement System for Producing Precise X-Ray Masks

    NASA Astrophysics Data System (ADS)

    Oda, Masatoshi; Une, Atsunobu; Okada, Ikuo; Shinohara, Shinji; Nakayama, Yasuo; Yoshihara, Hideo

    1995-12-01

    A new system that measures stress in film deposited on Si wafers has been developed to produce highly accurate X-ray masks. The system consists of very rigid air sliders, an electrostatic sensor, and a soft-handling wafer chuck. With the system, wafer warp is precisely measured before and after film deposition, and the stress distribution is calculated from those measurements. Wafer warps can be measured with a repeatability of a few nanometers by this system. The stress distribution of absorber film on 2-mm-thick Si wafers can be determined with an accuracy of 5 MPa. The stress distribution agrees well with the pattern position shifts in the membrane.

  16. Stress Evaluation in a Bulk High Tc Superconductor with Anisotropic Poisson's Ratio

    NASA Astrophysics Data System (ADS)

    Tsuchimoto, M.

    In magnetization process by field cooling of a bulk high-Tc superconductor (HTS), stresses are induced by the Lorentz force between shielding currents and magnetic fields. Stresses in a cylindrical bulk HTS are numerically evaluated in the axisymmetric three-dimensional analysis. Shielding current distributions are obtained through a macroscopic numerical simulation with the Maxwell equations and the critical state model. The stress distributions are obtained through numerical analysis with the finite- difference method. Maximum stresses are discussed for the case with anisotropic Poisson's ratio of the bulk HTS.

  17. High stress shallow moonquakes - Evidence for an initially totally molten moon

    NASA Technical Reports Server (NTRS)

    Binder, A. B.; Oberst, J.

    1985-01-01

    Thermoelastic stress calculations show that if the moon was initially molten only in the outer few hundred kilometers, as in the magma ocean model of the moon, the highlands crust should be aseismic. In contrast, if the moon was initially totally molten, high stress (1 to more than about 3 kbar), shallow (0 to about 6 km deep), compressional moonquakes should be occurring in the highlands crust. Calculations of the minimum stress drops made for the 28 observed shallow moonquakes suggest that 3 of them probably have stress drops in the kbar range. Thus, these very limited seismic data are consistent with the model that the moon was initially totally molten.

  18. Conducting High Cycle Fatigue Strength Step Tests on Gamma TiAl

    NASA Technical Reports Server (NTRS)

    Lerch, Brad; Draper, Sue; Pereira, J. Mike

    2002-01-01

    High cycle fatigue strength testing of gamma TiAl by the step test method is investigated. A design of experiments was implemented to determine if the coaxing effect occurred during testing. Since coaxing was not observed, step testing was deemed a suitable method to define the fatigue strength at 106 cycles.

  19. High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

    NASA Astrophysics Data System (ADS)

    Smith, S. A.; Wolden, C. A.; Bremser, M. D.; Hanser, A. D.; Davis, R. F.; Lampert, W. V.

    1997-12-01

    The etching behavior of gallium nitride (GaN), aluminum gallium nitride (AlxGa1-xN), and aluminum nitride (AlN) has been systematically examined in an inductively coupled plasma (ICP) using Cl2 and Ar as the reagents. Etch rates were strongly influenced by ICP power and dc bias, while relatively insensitive to pressure, flow rate, and gas composition. Maximum etch rates of 9800 Å/min for GaN, 9060 Å/min for Al0.28Ga0.72N, and 7490 Å/min for AlN were attained. The etch profiles were highly anisotropic over the range of conditions studied. The dc bias had to exceed certain voltages before significant etch rates were obtained. These values were <-20 V for GaN, -40 V for Al0.28Ga0.72N, and >-50 V for AlN. As such, increasing selectivity for GaN over Al0.28Ga0.72N and AlN was achieved at dc biases below -40 V. At -20 V, the GaN etch rates were 38 times greater than AlN and a factor of 10 greater than Al0.28Ga0.72N. These results demonstrate the importance of ion bombardment in the etching of these materials.

  20. Rock Strength Anisotropy in High Stress Conditions: A Case Study for Application to Shaft Stability Assessments

    NASA Astrophysics Data System (ADS)

    Watson, Julian Matthew; Vakili, Abouzar; Jakubowski, Mateusz

    2015-03-01

    Although rock strength anisotropy is a well-known phenomenon in rock mechanics, its impact on geotechnical design is often ignored or underestimated. This paper explores the concept of anisotropy in a high stress environment using an improved unified constitutive model (IUCM), which can account for more complex failure mechanisms. The IUCM is used to better understand the typical responses of anisotropic rocks to underground mining. This study applies the IUCM to a proposed rock shaft located in high stress/anisotropic conditions. Results suggest that the effect of rock strength anisotropy must be taken into consideration when assessing the rock mass response to mining in high stress and anisotropic rock conditions.

  1. Effect of Diffusion Control Layer on Reverse Al-Induced Layer Exchange Process for High-Quality Ge/Al/Glass Structure

    NASA Astrophysics Data System (ADS)

    Nakazawa, K.; Toko, K.; Suemasu, T.

    2015-05-01

    Fabricating large-grained polycrystalline Ge (poly-Ge) thin films on conducting-layer coated glass is a promising approach to lower the manufacturing cost of high-efficiency III-V tandem solar cells. We investigated the self-organizing formation of poly-Ge/Al/glass structures by using Al-induced layer exchange. The layer exchange between amorphous Ge and Al layers was completed at a low temperature of 350C. Forming the interlayer between Ge and Al, i.e., limiting the diffusion of Ge to Al lowered the Ge nucleation rate and then enlarged the grain size of the resulting poly-Ge layer. The natively oxidized Al interlayer, formed by exposing a thin Al membrane (2-nm thickness) to air for 180 min, led to the poly-Ge with grains 46 ?m in size. Moreover, the Ge layer was highly (111)-oriented. This Ge/Al/glass structure appears promising for use in the bottom cell of the III-V semiconductor based tandem solar cells, as well as in the epitaxial templates for aligned nanowires and other advanced materials.

  2. 227-261 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire

    NASA Astrophysics Data System (ADS)

    Hirayama, Hideki; Yatabe, Tohru; Noguchi, Norimichi; Kamata, Norihiko

    We demonstrated AlGaN multi-quantum well (MQW) deep ultraviolet (UV) light-emitting diodes (LEDs) with wavelength in the range of 227-261 nm fabricated on high-quality AlN buffers on sapphire substrates. We achieved crack-free, thick AlN buffer on sapphire with low threading dislocation density (TDD) and atomically flat surface by introducing an ammonia (NH3) pulse-flow multi-layer (ML) growth method through metal-organic chemical vapor deposition (MOCVD). The edge- and screw-type dislocation densities of AlGaN layer on AlN buffer were reduced to 7.5108 and 3.8107 cm-2, respectively, by using a ML-AlN buffer. We achieved single-peaked high-brightness operations of AlGaN deep-UV LEDs by fabricating them on the ML-AlN buffers on sapphire substrates. The maximum output power and external quantum efficiency (EQE) of the 261 nm and 227.5 nm LEDs were 1.65 mW and 0.23% under room-temperature (RT) CW operation, and 0.15 mW and 0.2%, under RT pulsed operation, respectively.

  3. Investigation of trap states in Al2O3 InAlN/GaN metaloxidesemiconductor high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Zhao, Sheng-Lei; Xue, Jun-Shuai; Zhu, Jie-Jie; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

    2015-12-01

    In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT (here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/InAlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas (2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the InAlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states. Project supported by the Program for National Natural Science Foundation of China (Grant Nos. 61404100 and 61306017).

  4. Mean stress effects on high-cycle fatigue of Alloy 718

    SciTech Connect

    Korth, G E

    1980-07-01

    This report covers an investigation of the effects of tensile mean stress on the high-cycle fatigue properties of Alloy 718. Three test temperatures (24, 427, and 649{degree}C) were employed, and there were tests in both strain and load control. Results were compared with three different models: linear Modified-Goodman, Peterson cubic, and stress-strain parameter. The linear Modified-Goodman model gave good correlation with actual test data for low and moderate mean stress values, but the stress-strain parameter showed excellent correlation over the entire range of possible mean stresses and therefore is recommended for predicting mean stress effects of Alloy 718. 13 refs., 12 figs.

  5. Combat high or traumatic stress: violent offending is associated with appetitive aggression but not with symptoms of traumatic stress

    PubMed Central

    Köbach, Anke; Schaal, Susanne; Elbert, Thomas

    2015-01-01

    Former members of armed groups in eastern DR Congo had typically witnessed, experienced, and perpetrated extreme forms of violence. Enhanced trauma-related symptoms had been shown in prior research. But also lashing out in self-defense is a familiar response to threat defined as reactive aggression. Another potential response is appetitive aggression, in which the perpetration of excessive violence is perceived as pleasurable (combat high). What roles do these forms of aggressive behavior play in modern warfare and how are they related to posttraumatic stress symptoms? To answer the question, we sought to determine predictors for appetitive aggressive and trauma-related mental illness, and investigated the frequency of psychopathological symptoms for high- and low-intensity conflict demobilization settings. To this end, we interviewed 213 former members of (para)military groups in the eastern Democratic Republic of Congo in regard to their combat exposure, posttraumatic stress, appetitive aggression, depression, suicidality, and drug dependence. Random forest regression embedded in a conditional inference framework revealed that perpetrated violent acts are not necessarily stressful. In fact, the experience of violent acts that typically implicated salient cues of hunting (e.g., blood, suffering of the victim, etc.) had the strongest association with an appetite for aggression. Furthermore, the number of lifetime perpetrated violent acts was the most important predictor of appetitive aggression. However, the number of perpetrated violent acts did not significantly affect the posttraumatic stress. Greater intensity of conflict was associated with more severe posttraumatic stress symptoms and depression. Psychotherapeutic interventions that address appetitive aggression in addition to trauma-related mental illness, including drug dependence, therefore seem indispensible for a successful reintegration of those who fought in the current civil wars. PMID:25709586

  6. Combat high or traumatic stress: violent offending is associated with appetitive aggression but not with symptoms of traumatic stress.

    PubMed

    Kbach, Anke; Schaal, Susanne; Elbert, Thomas

    2014-01-01

    Former members of armed groups in eastern DR Congo had typically witnessed, experienced, and perpetrated extreme forms of violence. Enhanced trauma-related symptoms had been shown in prior research. But also lashing out in self-defense is a familiar response to threat defined as reactive aggression. Another potential response is appetitive aggression, in which the perpetration of excessive violence is perceived as pleasurable (combat high). What roles do these forms of aggressive behavior play in modern warfare and how are they related to posttraumatic stress symptoms? To answer the question, we sought to determine predictors for appetitive aggressive and trauma-related mental illness, and investigated the frequency of psychopathological symptoms for high- and low-intensity conflict demobilization settings. To this end, we interviewed 213 former members of (para)military groups in the eastern Democratic Republic of Congo in regard to their combat exposure, posttraumatic stress, appetitive aggression, depression, suicidality, and drug dependence. Random forest regression embedded in a conditional inference framework revealed that perpetrated violent acts are not necessarily stressful. In fact, the experience of violent acts that typically implicated salient cues of hunting (e.g., blood, suffering of the victim, etc.) had the strongest association with an appetite for aggression. Furthermore, the number of lifetime perpetrated violent acts was the most important predictor of appetitive aggression. However, the number of perpetrated violent acts did not significantly affect the posttraumatic stress. Greater intensity of conflict was associated with more severe posttraumatic stress symptoms and depression. Psychotherapeutic interventions that address appetitive aggression in addition to trauma-related mental illness, including drug dependence, therefore seem indispensible for a successful reintegration of those who fought in the current civil wars. PMID:25709586

  7. Neutron diffraction analysis of residual strain/stress distribution in the vicinity of high strength welds

    NASA Astrophysics Data System (ADS)

    Mrz, L.; Karlsson, L.; Hamk, I.; Vrna, M.; Mikula, P.

    2010-06-01

    Residual stresses resulting from non homogeneous heat distribution during welding process belong to most significant factor influencing behavior of welded structures. These stresses are responsible for defect occurrence during welding and they are also responsible for crack initiation and propagation at the either static or dynamic load. The significant effect of weld metal chemical composition as well as the effect of fatigue load and local plastic deformation on residual stress distribution and fatigue life have been recognized for high strength steels welds. The changes in residual stress distribution have then positive effect on cold cracking behavior and also on fatigue properties of the welds [1-3]. Several experimental methods, both destructive and non-destructive, such as hole drilling method, X-ray diffraction, neutron diffraction and others, have been used to examine residual stress distribution in all three significant orientations in the vicinity of the welds. The present contribution summarizes the results of neutron diffraction measurements of residual stress distribution in the vicinity of single-pass high-strength-steel welds having different chemical composition as well as the influence of fatigue load and local plastic deformation. It has been observed that the chemical composition of the weld metal has a significant influence on the stress distribution around the weld. Similarly, by aplying both cyclic load or pre-stress load on the specimens, stress relaxation was observed even in the region of approximately 40 mm far from the weld toe.

  8. Boechera species exhibit species-specific responses to combined heat and high light stress.

    PubMed

    Gallas, Genna; Waters, Elizabeth R

    2015-01-01

    As sessile organisms, plants must be able to complete their life cycle in place and therefore tolerance to abiotic stress has had a major role in shaping biogeographical patterns. However, much of what we know about plant tolerance to abiotic stresses is based on studies of just a few plant species, most notably the model species Arabidopsis thaliana. In this study we examine natural variation in the stress responses of five diverse Boechera (Brassicaceae) species. Boechera plants were exposed to basal and acquired combined heat and high light stress. Plant response to these stresses was evaluated based on chlorophyll fluorescence measurements, induction of leaf chlorosis, and gene expression. Many of the Boechera species were more tolerant to heat and high light stress than A. thaliana. Gene expression data indicates that two important marker genes for stress responses: APX2 (Ascorbate peroxidase 2) and HsfA2 (Heat shock transcription factor A2) have distinct species-specific expression patterns. The findings of species-specific responses and tolerance to stress indicate that stress pathways are evolutionarily labile even among closely related species. PMID:26030823

  9. Boechera Species Exhibit Species-Specific Responses to Combined Heat and High Light Stress

    PubMed Central

    Gallas, Genna; Waters, Elizabeth R.

    2015-01-01

    As sessile organisms, plants must be able to complete their life cycle in place and therefore tolerance to abiotic stress has had a major role in shaping biogeographical patterns. However, much of what we know about plant tolerance to abiotic stresses is based on studies of just a few plant species, most notably the model species Arabidopsis thaliana. In this study we examine natural variation in the stress responses of five diverse Boechera (Brassicaceae) species. Boechera plants were exposed to basal and acquired combined heat and high light stress. Plant response to these stresses was evaluated based on chlorophyll fluorescence measurements, induction of leaf chlorosis, and gene expression. Many of the Boechera species were more tolerant to heat and high light stress than A. thaliana. Gene expression data indicates that two important marker genes for stress responses: APX2 (Ascorbate peroxidase 2) and HsfA2 (Heat shock transcription factor A2) have distinct species-specific expression patterns. The findings of species-specific responses and tolerance to stress indicate that stress pathways are evolutionarily labile even among closely related species. PMID:26030823

  10. An Electrochemical Framework to Explain Intergranular Stress Corrosion Cracking in an Al-5.4%Cu-0.5%Mg-0.5%Ag Alloy

    NASA Technical Reports Server (NTRS)

    Little, D. A.; Connolly, B. J.; Scully, J. R.

    2001-01-01

    A modified version of the Cu-depletion electrochemical framework was used to explain the metallurgical factor creating intergranular stress corrosion cracking susceptibility in an aged Al-Cu-Mg-Ag alloy, C416. This framework was also used to explain the increased resistance to intergranular stress corrosion cracking in the overaged temper. Susceptibility in the under aged and T8 condition is consistent with the grain boundary Cu-depletion mechanism. Improvements in resistance of the T8+ thermal exposure of 5000 h at 225 F (T8+) compared to the T8 condition can be explained by depletion of Cu from solid solution.

  11. Lattice stabilities, mechanical and thermodynamic properties of Al3Tm and Al3Lu intermetallics under high pressure from first-principles calculations

    NASA Astrophysics Data System (ADS)

    Xu-Dong, Zhang; Wei, Jiang

    2016-02-01

    The effects of high pressure on lattice stability, mechanical and thermodynamic properties of L12 structure Al3Tm and Al3Lu are studied by first-principles calculations within the VASP code. The phonon dispersion curves and density of phonon states are calculated by using the PHONONPY code. Our results agree well with the available experimental and theoretical values. The vibrational properties indicate that Al3Tm and Al3Lu keep their dynamical stabilities in L12 structure up to 100 GPa. The elastic properties and Debye temperatures for Al3Tm and Al3Lu increase with the increase of pressure. The mechanical anisotropic properties are discussed by using anisotropic indices AG, AU, AZ, and the three-dimensional (3D) curved surface of Young’s modulus. The calculated results show that Al3Tm and Al3Lu are both isotropic at 0 GPa and anisotropic under high pressure. In the present work, the sound velocities in different directions for Al3Tm and Al3Lu are also predicted under high pressure. We also calculate the thermodynamic properties and provide the relationships between thermal parameters and temperature/pressure. These results can provide theoretical support for further experimental work and industrial applications. Project supported by the Scientific Technology Plan of the Educational Department of Liaoning Province and Liaoning Innovative Research Team in University, China (Grant No. LT2014004) and the Program for the Young Teacher Cultivation Fund of Shenyang University of Technology, China (Grant No. 005612).

  12. Feasibility study of Nb3Al Rutherford cable for high field accelerator magnet application

    SciTech Connect

    Yamada, R.; Kikuchi, A.; Ambrosio, G.; Andreev, N.; Barzi, E.; Cooper, C.; Feher, S.; Kashikhin, V.V.; Lamm, M.; Novitski, I.; Takeuchi, T.; Tartaglia, M.; Turrioni, D.; Verweij, A.P.; Wake, M.; Willering, G; Zlobin, A.V.; /Fermilab

    2006-08-01

    Feasibility study of Cu stabilized Nb{sub 3}Al strand and Rutherford cable for the application to high field accelerator magnets are being done at Fermilab in collaboration with NIMS. The Nb{sub 3}Al strand, which was developed and manufactured at NIMS in Japan, has a non-copper Jc of about 844 A/mm{sup 2} at 15 Tesla at 4.2 K, a copper content of 50%, and filament size of about 50 microns. Rutherford cables with 27 Nb{sub 3}Al strands of 1.03 mm diameter were fabricated and tested. Quench tests on a short cable were done to study its stability with only its self field, utilizing a high current transformer. A pair of 2 meter long Nb{sub 3}Al cables was tested extensively at CERN at 4.3 and 1.9 K up to 11 Tesla including its self field with a high transport current of 20.2 kA. In the low field test we observed instability near splices and in the central region. This is related to the flux-jump like behavior, because of excessive amount of Nb in the Nb{sub 3}Al strand. There is possibility that the Nb in Nb{sub 3}Al can cause instability below 2 Tesla field regions. We need further investigation on this problem. Above 8 Tesla, we observed quenches near the critical surface at fast ramp rate from 1000 to 3000 A/sec, with quench velocity over 100 m/sec. A small racetrack magnet was made using a 14 m of Rutherford cable and successfully tested up to 21.8 kA, corresponding to 8.7 T.

  13. MOCVD-grown high-mobility Al 0.3Ga 0.7N/AlN/GaN HEMT structure on sapphire substrate

    NASA Astrophysics Data System (ADS)

    Wang, Xiaoliang; Wang, Cuimei; Hu, Guoxin; Xiao, Hongling; Fang, Cebao; Wang, Junxi; Ran, Junxue; Li, Jianping; Li, Jinmin; Wang, Zhanguo

    2007-01-01

    High-mobility Al 0.3Ga 0.7N/AlN/GaN high electron mobility transistors (HEMT) structure has been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. Electron mobility of 2185 cm 2/V s at room temperature and 15,400 cm 2/V s at 80 K with 2DEG density of 1.110 13 cm -2 are achieved. The corresponding sheet resistance of the HEMT wafer is 258.7 ?/sq. The AlN interfacial layer between the GaN buffer and the AlGaN barrier layer reduces the alloy disorder scattering. X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM) measurements have been conducted, and confirmed that the wafer has a high crystal quality.

  14. Solid state amorphization in the Al-Fe binary system during high energy milling

    SciTech Connect

    Urban, P. Montes, J. M.; Cintas, J.

    2013-12-16

    In the present study, mechanical alloying (MA) of Al75Fe25 elemental powders mixture was carried out in argon atmosphere, using a high energy attritor ball mill. The microstructure of the milled products at different stages of milling was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and differential scanning calorimetry (DSC). The results showed that the amorphous phase content increased by increasing the milling time, and after 50 hours the amorphization process became complete. Heating the samples resulted in the crystallization of the synthesized amorphous alloys and the appearance of the equilibrium intermetallic compounds Al{sub 5}Fe{sub 2}.

  15. Phase separation in equiatomic AlCoCrFeNi high-entropy alloy.

    PubMed

    Manzoni, A; Daoud, H; Völkl, R; Glatzel, U; Wanderka, N

    2013-09-01

    The microstructure of the as-cast AlCoCrFeNi high entropy alloy has been investigated by transmission electron microscopy and atom probe tomography. The alloy shows a very pronounced microstructure with clearly distinguishable dendrites and interdendrites. In both regions a separation into an Al-Ni rich matrix and Cr-Fe-rich precipitates can be observed. Moreover, fluctuations of single elements within the Cr-Fe rich phase have been singled out by three dimensional atom probe measurements. The results of investigations are discussed in terms of spinodal decomposition of the alloying elements inside the Cr-Fe-rich precipitates. PMID:23352803

  16. B2 structure of high-entropy alloys with addition of Al

    SciTech Connect

    Li, C.; Zhao, M.; Li, J. C.; Jiang, Q.

    2008-12-01

    A series of AlCrCoNiFe based alloys with equal percentage of principal components (high-entropy alloys or HE alloys) is fabricated. The related crystalline structures of the alloys are measured and calculated. Results show that the formed bcc phase is a compound based B2 structure where there is partial ionic bonding between Al and other transition metals. Thus, the bcc structure of the alloys should be a B2 instead of an A2 due to the large difference in electronegativities among the components consisting of the HE alloys.

  17. Process for preparing high-transition-temperature superconductors in the Nb-Al-Ge system

    DOEpatents

    Giorgi, A.L.; Szklarz, E.G.

    1973-01-30

    The patent describes a process for preparing superconducting materials in the Nb-Al-Ge system having transition temperatures in excess of 19K. The process comprises premixing powdered constituents, pressing them into a plug, heating the plug to 1,450-1,800C for 30 minutes to an hour under vacuum or an inert atmosphere, and annealing at moderate temperatures for reasonably long times (approximately 50 hours). High transition-temperature superconductors, including those in the Nb3(Al,Ge) system, prepared in accordance with this process exhibit little degradation in the superconducting transition temperature on being ground to -200 mesh powder. (GRA)

  18. High strength and utilizable ductility of bulk ultrafine-grained Cu-Al alloys

    NASA Astrophysics Data System (ADS)

    An, X. H.; Han, W. Z.; Huang, C. X.; Zhang, P.; Yang, G.; Wu, S. D.; Zhang, Z. F.

    2008-05-01

    Lack of plasticity is the main drawback for nearly all ultrafine-grained (UFG) materials, which restricts their practical applications. Bulk UFG Cu-Al alloys have been fabricated by using equal channel angular pressing technique. Its ductility was improved to exceed the criteria for structural utility while maintaining a high strength by designing the microstructure via alloying. Factors resulting in the simultaneously enhanced strength and ductility of UFG Cu-Al alloys are the formation of deformation twins and their extensive intersections facilitating accumulation of dislocations.

  19. High Temperature Aerogels in the Al2O3-SiO2 System

    NASA Technical Reports Server (NTRS)

    Hurwitz, Frances I.; Aranda, Denisse V.; Gallagher, Meghan E.

    2008-01-01

    Al2O3-SiO2 aerogels are of interest as constituents of thermal insulation systems for use at high temperatures. Al2O3 and mullite aerogels are expected to crystallize at higher temperatures than their SiO2 counterparts, hence avoiding the shrinkages that accompany the formation of lower temperature SiO2 phases and preserving pore structures into higher temperature regimes. The objective of this work is to determine the influence of processing parameters on shrinkage, gel structure (including surface area, pore size and distribution) and pyrolysis behavior.

  20. Faceted growth of primary Al{sub 2}Cu crystals during directional solidification in high magnetic field

    SciTech Connect

    Li, Chuanjun; Ren, Zhongming; Shen, Yu; Wang, Qiuliang; Dai, Yinming; Wang, Hui

    2013-10-21

    The high magnetic field is widely used to modify the crystal morphology. In this work, the effect of the magnetic field on growing behavior of faceted crystals in the Al-40 wt. %Cu alloy was investigated using directional solidification technique. It was found that the faceted growth of primary Al{sub 2}Cu phase was degraded and the primary spacing was reduced upon applying the magnetic field. Additionally, the length of the mushy zone first decreased and then increased with increase of the magnetic field intensity. The quantitative analysis reveals that the shear stress induced by the fluid motion is insufficient to break the atom bonds at the solid-liquid interface. However, both of the thermoelectric magnetic convection (TEMC) and the thermoelectric magnetic force (TEMF) cause dendrites to fracture and reduce the primary spacing. The two effects also weaken the faceting growth. Moreover, the instability of the solid-liquid interface is generated by the TEMF, which further leads to degrade the faceted growth. The length of mushy zone was changed by the TEMC and reached the minimum in the magnetic field of 0.5 T, which is in good agreement with the predicted value (0.83 T)

  1. Evaluation of wheat chromosome translocation lines for high temperature stress tolerance at grain filling stage.

    PubMed

    Pradhan, Gautam Prasad; Prasad, P V Vara

    2015-01-01

    High temperature (HT, heat) stress is detrimental to wheat (Triticum aestivum L.) production. Wild relatives of bread wheat may offer sources of HT stress tolerance genes because they grow in stressed habitats. Wheat chromosome translocation lines, produced by introgressing small segments of chromosome from wild relatives to bread wheat, were evaluated for tolerance to HT stress during the grain filling stage. Sixteen translocation lines and four wheat cultivars were grown at optimum temperature (OT) of 22/14C (day/night). Ten days after anthesis, half of the plants were exposed to HT stress of 34/26C for 16 d, and other half remained at OT. Results showed that HT stress decreased grain yield by 43% compared with OT. Decrease in individual grain weight (by 44%) was the main reason for yield decline at HT. High temperature stress had adverse effects on leaf chlorophyll content and Fv/Fm; and a significant decrease in Fv/Fm was associated with a decline in individual grain weight. Based on the heat response (heat susceptibility indices, HSIs) of physiological and yield traits to each other and to yield HSI, TA5594, TA5617, and TA5088 were highly tolerant and TA5637 and TA5640 were highly susceptible to HT stress. Our results suggest that change in Fv/Fm is a highly useful trait in screening genotypes for HT stress tolerance. This study showed that there is genetic variability among wheat chromosome translocation lines for HT stress tolerance at the grain filling stage and we suggest further screening of a larger set of translocation lines. PMID:25719199

  2. Evaluation of Wheat Chromosome Translocation Lines for High Temperature Stress Tolerance at Grain Filling Stage

    PubMed Central

    Pradhan, Gautam Prasad; Prasad, P. V. Vara

    2015-01-01

    High temperature (HT, heat) stress is detrimental to wheat (Triticum aestivum L.) production. Wild relatives of bread wheat may offer sources of HT stress tolerance genes because they grow in stressed habitats. Wheat chromosome translocation lines, produced by introgressing small segments of chromosome from wild relatives to bread wheat, were evaluated for tolerance to HT stress during the grain filling stage. Sixteen translocation lines and four wheat cultivars were grown at optimum temperature (OT) of 22/14C (day/night). Ten days after anthesis, half of the plants were exposed to HT stress of 34/26C for 16 d, and other half remained at OT. Results showed that HT stress decreased grain yield by 43% compared with OT. Decrease in individual grain weight (by 44%) was the main reason for yield decline at HT. High temperature stress had adverse effects on leaf chlorophyll content and Fv/Fm; and a significant decrease in Fv/Fm was associated with a decline in individual grain weight. Based on the heat response (heat susceptibility indices, HSIs) of physiological and yield traits to each other and to yield HSI, TA5594, TA5617, and TA5088 were highly tolerant and TA5637 and TA5640 were highly susceptible to HT stress. Our results suggest that change in Fv/Fm is a highly useful trait in screening genotypes for HT stress tolerance. This study showed that there is genetic variability among wheat chromosome translocation lines for HT stress tolerance at the grain filling stage and we suggest further screening of a larger set of translocation lines. PMID:25719199

  3. The Role of Stress in Causing High b-Value Regions in Aftershock Zones

    NASA Astrophysics Data System (ADS)

    Wiemer, S.; Toda, S.; Woessner, J.

    2004-12-01

    Aftershock zones present an ideal environment for studying physical mechanism influencing the earthquake size distribution, or b-value, because of the high seismic activity and the sudden changes caused by a mainshock. Several recent studies have documented dramatic temporal and spatial heterogeneity of b within aftershock sequences of recent large events such as Landers, Hector Mines, Denali and Western Tottori, with b-values ranging from 0.5 to above 1.5. To improve our understanding of the link between mainshocks slip, resulting stress changes, aftershocks occurrence and their size distribution, we investigate the fine scale b-value distribution within several aftershock zones and compare it with results from stress tensor inversions. Several recent studies have speculated that areas of high slip during mainshocks subsequently show high b-values and vice versa. A first order observation is also that regions of high slip during the mainshock are also regions of high heterogeneity, in agreement the heterogeneous postseimic stress field hypothesis defined by Michael. We then map the rotations of the stress field near the rupture zone, observing significant rotations which are consistent with the predicted coseismic rotations of the principal stress axes in an elastic half space under an assumption of a 30-bar uniaxial NE-SW compression. In contrast, a region wedged between the Landers and Joshua Tree rupture zones, in which Coulomb stress increases for pre-existing strike-slip faults, show less rotation and low b-values. We propose a conceptual model where stress perturbations caused by the main shocks are on the order of the background regional stress field, thus allowing faults or cracks near the rupture zone to be activated which are in principal unfavorably oriented for rupture given the regional stress field. These events, however, occurring in a heterogeneous stress field, are generally small, leading to high b-values. In contrast, stress transfer to the surrounding areas mainly beyond the edges of the source fault increases differential stress, which promotes ruptures of moderate-to-large scale matured faults that are consistent with the tectonic stress field. This results in low b-value. The recovery with time of the stress field near the rupture zone to a more homogeneous state, which would coincide with a decrease in the b-values, would depend on the local loading rate. For the Landers region this process is still ongoing 14 years after the mainshocks.

  4. High Sucrose Intake Ameliorates the Accumulation of Hepatic Triacylglycerol Promoted by Restraint Stress in Young Rats.

    PubMed

    Corona-Prez, Adriana; Daz-Muoz, Mauricio; Rodrguez, Ida Soto; Cuevas, Estela; Martnez-Gmez, Margarita; Casteln, Francisco; Rodrguez-Antoln, Jorge; Nicols-Toledo, Leticia

    2015-11-01

    Non-alcoholic fatty liver disease (NAFLD) is the most common chronic liver disorder. Stress promotes the onset of the NAFLD with a concomitant increment in the activity of the hepatic 11?-hydroxysteroid dehydrogenase type 1 (11?-HSD-1). However, the interaction between the stress and a carbohydrate-enriched diet for the development of NAFLD in young animals is unknown. In the present study, we evaluated the impact of chronic stress on the hepatic triacylglycerol level of young rats fed or not with a high sucrose-diet. For doing this, 21-day old male Wistar rats were allocated into 4 groups: control (C), chronic restraint stress (St), high-sucrose diet (S30), and chronic restraint stress plus a 30 % sucrose diet (St + S30). Chronic restraint stress consisted of 1-hour daily session, 5 days per week and for 4 weeks. Rats were fed with a standard chow and tap water (C group) or 30 % sucrose diluted in water (S30 group). The St + S30 groups consumed less solid food but had an elevated visceral fat accumulation in comparison with the St group. The St group showed a high level of serum corticosterone and a high activity of the hepatic 11?-HSD-1 concomitantly to the augmentation of hepatic steatosis signs, a high hepatic triacylglycerol content, and hepatic oxidative stress. Conversely, the high-sucrose intake in stressed rats (St + S30 group) reduced the hepatic 11?-HSD-1 activity, the level of serum corticosterone, and the hepatic triacylglycerol content. Present findings show that a high-sucrose diet ameliorates the triacylglycerol accumulation in liver promoted by the restraint stress in young male rats. PMID:26399510

  5. High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

    PubMed Central

    Yang, Weihuang; Li, Jinchai; Zhang, Yong; Huang, Po-Kai; Lu, Tien-Chang; Kuo, Hao-Chung; Li, Shuping; Yang, Xu; Chen, Hangyang; Liu, Dayi; Kang, Junyong

    2014-01-01

    High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 × 109 cm−2) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and emission energy, and linear dependence of the intensity with varying excitation power. More significantly, the radiative recombination was found to dominant from 15 to 300 K, with a high internal quantum efficiency of 62% even at room temperature. PMID:24898569

  6. ER Stress Mediates TiAl6V4 Particle-Induced Peri-Implant Osteolysis by Promoting RANKL Expression in Fibroblasts

    PubMed Central

    Wang, Zhenheng; Liu, Naicheng; Shi, Tongguo; Zhou, Gang; Wang, Zhenzhen; Gan, Jingjing; Guo, Ting; Qian, Hongbo; Bao, Nirong; Zhao, Jianning

    2015-01-01

    Wear particle-induced osteolysis is a major cause of aseptic loosening, which is one of the most common reasons for total hip arthroplasty (THA) failure. Previous studies have shown that the synovial fibroblasts present in the periprosthetic membrane are important targets of wear debris during osteolysis. However, the interaction mechanisms between the wear debris and fibroblasts remain largely unknown. In the present study, we investigated the effect of ER (endoplasmic reticulum) stress induced by TiAl6V4 particles (TiPs) in human synovial fibroblasts and calvarial resorption animal models. The expression of ER stress markers, including IRE1-α, GRP78/Bip and CHOP, were determined by western blot in fibroblasts that had been treated with TiPs for various times and concentration. To address whether ER stress was involved in the expression of RANKL, the effects of ER stress blockers (including 4-PBA and TUDCA) on the expression of RANKL in TiPs-treated fibroblasts were examined by real-time PCR, western blot and ELISA. Osteoclastogenesis was assessed by tartrate resistant acid phosphatase (TRAP) staining. Our study demonstrated that ER stress markers were markedly upregulated in TiPs-treated fibroblasts. Blocking ER stress significantly reduced the TiPs-induced expression of RANKL both in vitro and in vivo. Moreover, the inhibition of ER stress ameliorated wear particle-induced osteolysis in animal models. Taken together, these results suggested that the expression of RANKL induced by TiPs was mediated by ER stress in fibroblasts. Therefore, down regulating the ER stress of fibroblasts represents a potential therapeutic approach for wear particle-induced periprosthetic osteolysis. PMID:26366858

  7. High temperature air oxidation resistance of TiAlCr-Y coated Ti45Al8Nb between 750 C - 950 C

    NASA Astrophysics Data System (ADS)

    Dudziak, Tomasz; Datta, Prasanta; Du, Hailiang; Ross, Ian Mark

    2013-12-01

    This study is concerned with air oxidation of TiAlCr-Y coated Ti45Al-8Nb (at%) alloy between 750 C-950 C for 500 hours. It was shown in these tests that at 750 C, 850 C and 950 C, the oxidation degradation increased with temperature: at 750 C the oxide scale consisted of TiO2/Al2O3/Cr2O3 phases, whilst at 850 C the oxide scale consisted of TiO2/Al2O3 phases with a small amount of Cr2O3, and larger number of voids. The material exposed at 950 C showed a significant formation of TiO2 with a small amount of Al2O3 and high number of voids; the formation of Cr2O3 at 950 C was inhibited mainly due to the formation of volatile CrO3 or CrO2(OH)2 phase.

  8. Irradiation Resistance in Al x CoCrFeNi High Entropy Alloys

    NASA Astrophysics Data System (ADS)

    Xia, S. Q.; Yang, X.; Yang, T. F.; Liu, S.; Zhang, Y.

    2015-08-01

    The irradiation behavior of Al x CoCrFeNi (x = 0.1, 0.75, and 1.5) high entropy alloys was studied under 3 MeV Au-ions irradiation. The microstructural change and volume swelling due to irradiation were investigated using transmission electron microscopy and atomic force microscopy. The results showed that, with increasing the Al contents, the phase crystal structures of the as-cast samples evolved from face-centered cubic (FCC), to FCC + body-centered cubic (BCC), and BCC and irradiation-induced volume swelling increased. All alloys showed exceptional structural stability when irradiated up to over 50 displacement per atom at 298 K, and the irradiation-induced volume swellings in Al x CoCrFeNi HEAs were significantly lower than conventional nuclear materials under similar irradiation dosages.

  9. A Review of Mold Flux Development for the Casting of High-Al Steels

    NASA Astrophysics Data System (ADS)

    Wang, Wanlin; Lu, Boxun; Xiao, Dan

    2016-02-01

    Mold flux plays key roles during the continuous casting process of molten steel, which accounts for the quality of final slabs. With the development of advanced high strength steels (AHSS), certain amounts of Al have been added into steels that would introduce severe slag/metal interaction problems during process of continuous casting. The reaction is between Al and SiO2 that is the major component in the mold flux system. Intensive efforts have been conducted to optimize the mold flux and a CaO-Al2O3-based mold flux system has been proposed, which shows the potential to be applied for the casting process of AHSS. The latest developments for this new mold flux system were summarized with the aim to offer technical guidance for the design of new generation mold flux system for the casting of AHSS.

  10. A Review of Mold Flux Development for the Casting of High-Al Steels

    NASA Astrophysics Data System (ADS)

    Wang, Wanlin; Lu, Boxun; Xiao, Dan

    2015-10-01

    Mold flux plays key roles during the continuous casting process of molten steel, which accounts for the quality of final slabs. With the development of advanced high strength steels (AHSS), certain amounts of Al have been added into steels that would introduce severe slag/metal interaction problems during process of continuous casting. The reaction is between Al and SiO2 that is the major component in the mold flux system. Intensive efforts have been conducted to optimize the mold flux and a CaO-Al2O3-based mold flux system has been proposed, which shows the potential to be applied for the casting process of AHSS. The latest developments for this new mold flux system were summarized with the aim to offer technical guidance for the design of new generation mold flux system for the casting of AHSS.

  11. Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

    2008-12-01

    Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

  12. High Density Hydrogen Storage System Demonstration Using NaAlH4 Based Complex Compound Hydrides

    SciTech Connect

    Daniel A. Mosher; Xia Tang; Ronald J. Brown; Sarah Arsenault; Salvatore Saitta; Bruce L. Laube; Robert H. Dold; Donald L. Anton

    2007-07-27

    This final report describes the motivations, activities and results of the hydrogen storage independent project "High Density Hydrogen Storage System Demonstration Using NaAlH4 Based Complex Compound Hydrides" performed by the United Technologies Research Center under the Department of Energy Hydrogen Program, contract # DE-FC36-02AL67610. The objectives of the project were to identify and address the key systems technologies associated with applying complex hydride materials, particularly ones which differ from those for conventional metal hydride based storage. This involved the design, fabrication and testing of two prototype systems based on the hydrogen storage material NaAlH4. Safety testing, catalysis studies, heat exchanger optimization, reaction kinetics modeling, thermochemical finite element analysis, powder densification development and material neutralization were elements included in the effort.

  13. Highly uniform sheet resistance of the double-channel AlInN/GaN heterostructure

    NASA Astrophysics Data System (ADS)

    Zhang, S.; Yin, J. Y.; Feng, Z. H.; Li, M. C.; Wang, J. Z.; Zhao, L. C.

    2010-12-01

    A high uniformity of sheet resistance was achieved in the double-channel (DC) Al 0.82In 0.18N/GaN heterostructure by lowering the interface roughness scattering effect. The variation of the AlInN/GaN interface roughness as a key factor influenced the uniformity of the sheet resistance. In the DC heterostructure, the distribution of the two dimension electron gas (2DEG) was modified to reduce interface roughness scattering effect. As a result, the uniformity of the sheet resistance was enhanced, and the nonuniformity of the sheet resistance in the DC Al 0.82In 0.18N/GaN could be reduced to 0.7% after structure optimization.

  14. Nano features of Al/Au ultrasonic bond interface observed by high resolution transmission electron microscopy

    SciTech Connect

    Ji Hongjun; Li Mingyu Kim, Jong-Myung; Kim, Dae-Won; Wang Chunqing

    2008-10-15

    Nano-scale interfacial details of ultrasonic AlSi1 wire wedge bonding to a Au/Ni/Cu pad were investigated using high resolution transmission electron microscopy (HRTEM). The intermetallic phase Au{sub 8}Al{sub 3} formed locally due to diffusion and reaction activated by ultrasound at the Al/Au bond interface. Multilayer sub-interfaces roughly parallel to the wire/pad interface were observed among this phase, and interdiffusional features near the Au pad resembled interference patterns, alternately dark and bright bars. Solid-state diffusion theory cannot be used to explain why such a thick compound formed within milliseconds at room temperature. The major formation of metallurgical bonds was attributed to ultrasonic cyclic vibration.

  15. Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Fontser, A.; Prez-Toms, A.; Placidi, M.; Llobet, J.; Baron, N.; Chenot, S.; Cordier, Y.; Moreno, J. C.; Jennings, M. R.; Gammon, P. M.; Fisher, C. A.; Iglesias, V.; Porti, M.; Bayerl, A.; Lanza, M.; Nafra, M.

    2012-10-01

    AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50 nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents.

  16. Improved austenitic stainless steel for high temperature applications. [Improved stress-rupture properties

    DOEpatents

    Not Available

    This invention describes a composition for an austenitic stainless steel which has been found to exhibit improved high temperature stress rupture properties. The composition of this alloy is about (in wt. %): 12.5 to 14.5 Cr; 14.5 to 16.5 Ni; 1.5 to 2.5 Mo; 1.5 to 2.5 Mn; 0.1 to 0.4 Ti; 0.02 to 0.08 C; 0.5 to 1.0 Si; 0.01 maximum, N; 0.02 to 0.08 P; 0.002 to 0.008 B; 0.004-0.010 S; 0.02-0.05 Nb; .01-.05 V; 0.005-0.02 Ta; 0.02-0.05 Al; 0.01-0.04 Cu; 0.02-0.05 Co; .03 maximum, As; 0.01 maximum, 0; 0.01 maximum, Zr; and with the balance of the alloy being essentially iron. The carbon content of the alloy is adjusted such that wt. % Ti/(wt. % C+wt. % N) is between 4 and 6, and most preferably about 5. In addition the sum of the wt. % P + wt. % B + wt. % S is at least 0.03 wt. %. This alloy is believed to be particularly well suited for use as fast breeder reactor fuel element cladding.

  17. T91 cladding tubes with and without modified FeCrAlY coatings exposed in LBE at different flow, stress and temperature conditions

    NASA Astrophysics Data System (ADS)

    Weisenburger, A.; Heinzel, A.; Mller, G.; Muscher, H.; Rousanov, A.

    2008-06-01

    Corrosion tests of 2000 h duration are conducted on tubes consisting of the steel T91 in liquid metal loops containing eutectic lead-bismuth melt with 10 -6 wt% oxygen in solution. The experiments include tests at temperatures of 480-600 C, at liquid metal flow velocities of 1, 2 and 3 m/s and under mechanical stress due to an internal pressure of 15 MPa. The surface of tubes exposed to 600 C and to different flow velocities are coated with a FeCrAlY alloy to examine its suitability as a protective coating for high loaded parts like cladding tubes. The coating was remelted by an electron pulse of GESA to homogenize the coating and improve its bonding to the bulk material. In all of the tests no liquid metal attack was observed. As received steel specimens developed multilayer oxide scales of a thickness increasing with temperature and internal pressure, while coated tubes had a thin protective alumina scale. Flow velocities above 2 m/s permanently removed formed magnetite at 550 C. No influence of the flow velocity was observed for the coated surfaces which keep their stable thin alumina scale. The internal pressure of 15 MPa caused a strain of 0.7% in the tube wall, which obviously increases iron diffusion and enhances magnetite formation.

  18. Starbursts and high-redshift galaxies are radioactive: high abundances of 26Al and other short-lived radionuclides

    NASA Astrophysics Data System (ADS)

    Lacki, Brian C.

    2014-06-01

    Short-lived radionuclides (SLRs) like 26Al are synthesized by massive stars and are a byproduct of star formation. The abundances of SLRs in the gas of a star-forming galaxy are inversely proportional to the gas consumption time. The rapid evolution of specific star formation rate (SSFR) of normal galaxies implies they had mean SLR abundances 3-10 times higher at z = 2. During the epoch of Solar system formation, the background SLR abundances of the Galaxy were up to twice as high as at present, if SLR yields from massive stars do not depend on metallicity. If SLRs are homogenized in the gas of galaxies, the high SSFRs of normal galaxies can partly explain the elevated abundance of SLRs like 60Fe and 26Al in the early Solar system. Starburst galaxies have much higher SSFRs still, and have enormous mean abundances of 26Al (26Al/27Al ?10-3 for solar metallicity gas). The main uncertainty is whether the SLRs are mixed with the star-forming molecular gas: they could be trapped in hot gas and decay before entering the colder phases, or be blown out by starburst winds. I consider how variability in star formation rate affects the SLR abundances, and I discuss how SLR transport may differ in these galaxies. The enhanced 26Al of starbursts might maintain moderate ionization rates (10-18-10-17 s-1), possibly dominating ionization in dense clouds not penetrated by cosmic rays. Similar ionization rates would be maintained in protoplanetary discs of starbursts, if the SLRs are well mixed, and the radiogenic heating of planetesimals would likewise be much higher. In this way, galaxy evolution can affect the geological history of planetary systems.

  19. Highly reliable 40-W cw InGaAlAs/GaAs 808-nm laser bars

    NASA Astrophysics Data System (ADS)

    Hanke, Christian; Korte, Lutz; Acklin, Bruno D.; Luft, Johann; Groetsch, Stefan; Herrmann, Gerhard; Spika, Zeljko; Marchiano, Marcel; DeOdorico, Bernhard; Wilhelmi, Jens

    1999-04-01

    The fundamental question whether aluminum-free semiconductor lasers in the 808 nm band are significantly more reliable than Al-containing lasers is still open. We have fabricated and tested high-power InGaAlAs/GaAs-lasers which show excellent reliability data at and above 40 W cw. The laser structure consists of an InGaAlAs-double-quantum well (DQW) as active layer embedded in a large optical cavity (LOC) waveguide structure. The layers were grown in a low pressure MOVPE (LP- MOVPE) reactor using high quality precursors. Asymmetrically coated bars with a width of 1 cm containing 25 groups of 200 micrometer wide emitters were mounted junction down on actively cooled heatsinks. At a heatsink temperature of 18 degrees Celsius the slope-efficiency is 1.1 - 1.2 W/A. Due to the low series-resistance of 2.2 m(Omega) and the low internal losses in the range of 1.7 cm-1 the overall efficiency at 40 W cw reaches 50%. Lifetime studies over 33 0000 h accumulated device hours show that the laser bars with a resonator length of 900 micrometer can be operated at 40 W with high reliability. The mean degradation rate is -0.11%/kh. This result emphasizes that Al-containing lasers can also have a very high reliability usually claimed for Al-free lasers. As a consequence of these encouraging results we will start further lifetime tests at 50 to 60 W.

  20. Stress.

    PubMed

    Chambers, David W

    2008-01-01

    We all experience stress as a regular, and sometimes damaging and sometimes useful, part of our daily lives. In our normal ups and downs, we have our share of exhaustion, despondency, and outrage--matched with their corresponding positive moods. But burnout and workaholism are different. They are chronic, dysfunctional, self-reinforcing, life-shortening habits. Dentists, nurses, teachers, ministers, social workers, and entertainers are especially susceptible to burnout; not because they are hard-working professionals (they tend to be), but because they are caring perfectionists who share control for the success of what they do with others and perform under the scrutiny of their colleagues (they tend to). Workaholics are also trapped in self-sealing cycles, but the elements are ever-receding visions of control and using constant activity as a barrier against facing reality. This essay explores the symptoms, mechanisms, causes, and successful coping strategies for burnout and workaholism. It also takes a look at the general stress response on the physiological level and at some of the damage American society inflicts on itself. PMID:18846841

  1. Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and making same

    DOEpatents

    Syn, Chol K. (Moraga, CA); Lesuer, Donald R. (Livermore, CA)

    1995-01-01

    A laminated metal composite of low flow stress layers and high flow stress layers is described which is formed using flow constraining elements, preferably in the shape of rings, individually placed around each of the low flow stress layers while pressure is applied to the stack to bond the layers of the composite together, to thereby restrain the flow of the low flow stress layers from the stack during the bonding. The laminated metal composite of the invention is made by the steps of forming a stack of alternate layers of low flow stress layers and high flow stress layers with each layer of low flow stress material surrounded by an individual flow constraining element, such as a ring, and then applying pressure to the top and bottom surfaces of the resulting stack to bond the dissimilar layers together, for example, by compression rolling the stack. In a preferred embodiment, the individual flow constraining elements surrounding the layers of low flow stress material are formed of a material which may either be the same material as the material comprising the high flow stress layers, or have similar flow stress characteristics to the material comprising the high flow stress layers. Additional sacrificial layers may be added to the top and bottom of the stack to avoid damage to the stack during the bonding step; and these additional layers may then be removed after the bonding step.

  2. Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and making same

    DOEpatents

    Syn, C.K.; Lesuer, D.R.

    1995-07-04

    A laminated metal composite of low flow stress layers and high flow stress layers is described which is formed using flow constraining elements, preferably in the shape of rings, individually placed around each of the low flow stress layers while pressure is applied to the stack to bond the layers of the composite together, to thereby restrain the flow of the low flow stress layers from the stack during the bonding. The laminated metal composite of the invention is made by the steps of forming a stack of alternate layers of low flow stress layers and high flow stress layers with each layer of low flow stress material surrounded by an individual flow constraining element, such as a ring, and then applying pressure to the top and bottom surfaces of the resulting stack to bond the dissimilar layers together, for example, by compression rolling the stack. In a preferred embodiment, the individual flow constraining elements surrounding the layers of low flow stress material are formed of a material which may either be the same material as the material comprising the high flow stress layers, or have similar flow stress characteristics to the material comprising the high flow stress layers. Additional sacrificial layers may be added to the top and bottom of the stack to avoid damage to the stack during the bonding step; and these additional layers may then be removed after the bonding step. 5 figs.

  3. Shock compression response of highly reactive Ni + Al multilayered thin foils

    NASA Astrophysics Data System (ADS)

    Kelly, Sean C.; Thadhani, Naresh N.

    2016-03-01

    The shock-compression response of Ni + Al multilayered thin foils is investigated using laser-accelerated thin-foil plate-impact experiments over the pressure range of 2 to 11 GPa. The foils contain alternating Ni and Al layers (parallel but not flat) of nominally 50 nm bilayer spacing. The goal is to determine the equation of state and shock-induced reactivity of these highly reactive fully dense thin-foil materials. The laser-accelerated thin-foil impact set-up involved combined use of photon-doppler-velocimetry to monitor the acceleration and impact velocity of an aluminum flyer, and VISAR interferometry was used to monitor the back free-surface velocity of the impacted Ni + Al multilayered target. The shock-compression response of the Ni + Al target foils was determined using experimentally measured parameters and impedance matching approach, with error bars identified considering systematic and experimental errors. Meso-scale CTH shock simulations were performed using real imported microstructures of the cross-sections of the multilayered Ni + Al foils to compute the Hugoniot response (assuming no reaction) for correlation with their experimentally determined equation of state. It was observed that at particle velocities below ˜150 m/s, the experimentally determined equation of state trend matches the CTH-predicted inert response and is consistent with the observed unreacted state of the recovered Ni + Al target foils from this velocity regime. At higher particle velocities, the experimentally determined equation of state deviates from the CTH-predicted inert response. A complete and self-sustained reaction is also seen in targets recovered from experiments performed at these higher particle velocities. The deviation in the measured equation of state, to higher shock speeds and expanded volumes, combined with the observation of complete reaction in the recovered multilayered foils, confirmed via microstructure characterization, is indicative of the occurrence of shock-induced chemical reaction occurring in the time-scale of the high-pressure state. TEM characterization of recovered shock-compressed (unreacted) Ni + Al multilayered foils exhibits distinct features of constituent mixing revealing jetted layers and inter-mixed regions. These features were primarily observed in the proximity of the undulations present in the alternating layers of the Ni + Al starting foils, suggesting the important role of such instabilities in promoting shock-induced intermetallic-forming reactions in the fully dense highly exothermic multilayered thin foils.

  4. Sputtered AlN encapsulant for high-temperature annealing of GaN

    NASA Astrophysics Data System (ADS)

    Zolper, J. C.; Rieger, D. J.; Baca, A. G.; Pearton, S. J.; Lee, J. W.; Stall, R. A.

    1996-07-01

    Reactively sputtered AlN is shown by electrical characterization of Pt/Au Schottky diodes to be an effect encapsulant for GaN annealed at 1100 C. Schottky diodes formed on GaN encapsulated with AlN during the anneal had low reverse leakage currents with breakdown voltages in excess of 40 V. In contrast, samples annealed without the AlN layer had 3-4 orders-of-magnitude higher reverse leakage currents. Atomic force microscopy images of as-grown and annealed samples also demonstrate an increase in surface roughness and a change in morphology of the uncapped samples following annealing. Auger electron spectroscopy supports the hypothesis that the AlN encapsulant is reducing N loss from the GaN substrate. N loss in the uncapped samples is expected to create an n+-region at the surface that accounts for the high reverse leakage current and improved Ohmic behavior for the uncapped samples. The use of AlN encapsulation will enable the realization of all ion implanted GaN metal semiconductor field effect transistors.

  5. New Powder Metallurgical Approach to Achieve High Fatigue Strength in Ti-6Al-4V Alloy

    NASA Astrophysics Data System (ADS)

    Cao, Fei; Ravi Chandran, K. S.; Kumar, Pankaj; Sun, Pei; Zak Fang, Z.; Koopman, Mark

    2016-02-01

    Recently, manufacturing of titanium by sintering and dehydrogenation of hydride powders has generated a great deal of interest. An overarching concern regarding powder metallurgy (PM) titanium is that critical mechanical properties, especially the high-cycle fatigue strength, are lower than those of wrought titanium alloys. It is demonstrated here that PM Ti-6Al-4V alloy with mechanical properties comparable (in fatigue strength) and exceeding (in tensile properties) those of wrought Ti-6Al-4V can be produced from titanium hydride powder, through the hydrogen sintering and phase transformation process. Tensile and fatigue behavior, as well as fatigue fracture mechanisms, have been investigated under three processing conditions. It is shown that a reduction in the size of extreme-sized pores by changing the hydride particle size distribution can lead to improved fatigue strength. Further densification by pneumatic isostatic forging leads to a fatigue strength of ~550 MPa, comparable to the best of PM Ti-6Al-4V alloys prepared by other methods and approaching the fatigue strengths of wrought Ti-6Al-4V alloys. The microstructural factors that limit fatigue strength in PM titanium have been investigated, and pathways to achieve greater fatigue strengths in PM Ti-6Al-4V alloys have been identified.

  6. High-resolution imagery of active faulting offshore Al Hoceima, Northern Morocco

    NASA Astrophysics Data System (ADS)

    d'Acremont, E.; Gutscher, M.-A.; Rabaute, A.; Mercier de Lpinay, B.; Lafosse, M.; Poort, J.; Ammar, A.; Tahayt, A.; Le Roy, P.; Smit, J.; Do Couto, D.; Cancout, R.; Prunier, C.; Ercilla, G.; Gorini, C.

    2014-09-01

    Two recent destructive earthquakes in 1994 and 2004 near Al Hoceima highlight that the northern Moroccan margin is one of the most seismically active regions of the Western Mediterranean area. Despite onshore geodetic, seismological and tectonic field studies, the onshore-offshore location and extent of the main active faults remain poorly constrained. Offshore Al Hoceima, high-resolution seismic reflection and swath-bathymetry have been recently acquired during the Marlboro-2 cruise. These data at shallow water depth, close to the coast, allow us to describe the location, continuity and geometry of three active faults bounding the offshore Nekor basin. The well-expressed normal-left-lateral onshore Trougout fault can be followed offshore during several kilometers with a N171E 3 trend. Westward, the Bousekkour-Aghbal normal-left-lateral onshore fault is expressed offshore with a N020E 4 trending fault. The N030E 2 Bokkoya fault corresponds to the western boundary of the Plio-Quaternary offshore Nekor basin in the Al Hoceima bay and seems to define an en chelon tectonic pattern with the Bousekkour-Aghbal fault. We propose that these three faults are part of the complex transtensional system between the Nekor fault and the Al-Idrissi fault zone. Our characterization of the offshore expression of active faulting in the Al Hoceima region is consistent with the geometry and nature of the active fault planes deduced from onshore geomorphological and morphotectonic analyses, as well as seismological, geodetic and geodynamic data.

  7. High Purity Germanium Detectors and Angular Distribution of 2Al(p,g)28Si

    NASA Astrophysics Data System (ADS)

    Wilson, Andre

    2014-09-01

    The purpose of this research was to study high purity germanium detector systems, and to calculate and compare absorption ratios of 27Al(p,g)28Si. Work with the germanium detector online array for gamma ray spectroscopy in nuclear astrophysics in the Nuclear Science Laboratory at the University of Notre Dame, also known as Georgina, including energy calibrations and work with software and hardware logic, provided the necessary background and experience with high purity germanium detectors and angular distribution of gamma rays. The knowledge taken from work with the Georgina detectors was then applied to the analysis of 27Al(p,g)28Si. Previous experimental data of 27Al(p,g)28Si was analyzed using the Ep = 1778.9 keV resonance. The data used was taken from a 2010 experiment completed in the Nuclear Science Laboratory at the University of Notre Dame using the 4MV KN particle accelerator. A 1977 paper by A. Anttila and J. Keinonen with analysis of the same reaction using the Ep = 992 keV resonance was used for the energy calibration and gamma energies. Peak fitting and background reduction of the spectra were completed using analysis software, jtek. Angular distribution ratios from a 56Co source were used for the normalization of the 27Al data. Angular dependent absorption factors were used to analyze the angular distribution of ?-rays from the 27Al beam target. With these absorption factors, relative gamma intensity measurements of 27Al(p,g)28Si were calculated.

  8. High hemoglobin mixed disulfide content in hemolysates from stressed shark.

    PubMed

    Dafr, A L; Reischl, E

    1990-01-01

    1. Hemolysate from heavily stressed smooth hammerhead shark, Sphyrna zygaena, shows three electrophoretic components, SZ I, SZ II and SZ III, whose relative concentrations are 36.4 +/- 6.8, 36.4 +/- 5.0 and 20.8 +/- 5.7%, respectively. After reduction with DTE only SZ I remained. 2. SZ I reacted with glutathione disulfide reconstitute SZ II and SZ III. 3. Non-reduced, DTE-reduced, and denatured hemoglobin were found to have 2.0 +/- 0.4, 3.7 +/- 0.6, and 9.4 +/- 0.7-SH groups, respectively. 4. Erythrocyte non-protein--SH (NPSH), including glutathione present as mixed disulfide with SZ II and SZ III, is 1.7 NPSH/Hb. PMID:2361357

  9. Investigation on compressive behavior of Cu-35Ni-15Al alloy at high temperatures

    NASA Astrophysics Data System (ADS)

    Li, Cong; Chen, Jian; Li, Wei; Hu, Yongle; Ren, Yanjie; Qiu, Wei; He, Jianjun; Chen, Jianlin

    2014-08-01

    Microstructures and mechanical properties of Cu-35Ni-15Al alloy in cast and porous states were studied by scanning electron microscopy and compression tests. The influence of porosity, deformation temperature and loading rate on mechanical properties of the two kinds of alloys was investigated. The results show that the as cast alloy and porous alloys have almost the same phase constitution: Cu rich phase, Ni rich phase and K intermetallics. The yield strength of porous alloys increases continuously with decreasing porosity, the relationship between porosity and yield stress follows Gibson-Ashby equation. With decreasing deformation temperature, the yield strength of as cast alloy and porous alloy increase. With the increase of loading rate, the yield strength of these alloys shows an increasing trend. After compression, the microstructure of as cast alloy is more uniform, and porous alloys are more prone to have localized deformations.

  10. Growth and characterization of highly oriented AlN films by DC reactive sputtering

    NASA Astrophysics Data System (ADS)

    Panda, Padmalochan; Sravani, Bulusu; Ramaseshan, R.; Ravi, N.; Jose, Feby; Dash, S.; Tyagi, A. K.

    2015-06-01

    Wurtzite type AlN thin films were grown on Si (100) substrates at substrate temperatures (S.T.) varying from RT to 600 C using DC reactive magnetron sputtering by keeping the parameters such as Ar/N2, power and target to substrate distance (TSD) constant. Evolution of preferred orientation of the deposited films was studied by GIXRD and a-axis orientation was observed at 400 C. The residual stress measurement of these films was carried out by sin2? technique and they varied from tensile to compressive (R.T. to 600 C). Highest hardness (HIT) was observed for 400 C as 20 GPa, whereas highest modulus was observed for 600 C as 264 GPa.

  11. Occupational Stress and Cardiovascular Risk Factors in High-Ranking Government Officials and Office Workers

    PubMed Central

    Mirmohammadi, Seyyed Jalil; Taheri, Mahmoud; Mehrparvar, Amir Houshang; Heydari, Mohammad; Saadati Kanafi, Ali; Mostaghaci, Mehrdad

    2014-01-01

    Background: Cardiovascular diseases are among the most important sources of mortality and morbidity, and have a high disease burden. There are some major well-known risk factors, which contribute to the development of these diseases. Occupational stress is caused due to imbalance between job demands and individuals ability, and it has been implicated as an etiology for cardiovascular diseases. Objectives: This study was conducted to evaluate the cardiovascular risk factors and different dimensions of occupational stress in high-ranking government officials, comparing an age and sex-matched group of office workers with them. Patients and Methods: We invited 90 high-ranking officials who managed the main governmental offices in a city, and 90 age and sex-matched office workers. The subjects were required to fill the occupational role questionnaire (Osipow) which evaluated their personal and medical history as well as occupational stress. Then, we performed physical examination and laboratory tests to check for cardiovascular risk factors. Finally, the frequency of cardiovascular risk factors and occupational stress of two groups were compared. Results: High-ranking officials in our study had less work experience in their current jobs and smoked fewer pack-years of cigarette, but they had higher waist and hip circumference, higher triglyceride level, more stress from role overload and responsibility, and higher total stress score. Our group of office workers had more occupational stress because of role ambiguity and insufficiency, but their overall job stress was less than officials. Conclusions: The officials have higher scores in some dimensions of occupational stress and higher overall stress score. Some cardiovascular risk factors were also more frequent in managers. PMID:25389469

  12. High temperature induces apoptosis and oxidative stress in pufferfish (Takifugu obscurus) blood cells.

    PubMed

    Cheng, Chang-Hong; Yang, Fang-Fang; Liao, Shao-An; Miao, Yu-Tao; Ye, Chao-Xia; Wang, An-Li; Tan, Jia-Wen; Chen, Xiao-Yan

    2015-10-01

    Water temperature is an important environmental factor in aquaculture farming that affects the survival and growth of organisms. The change in culture water temperature may not only modify various chemical and biological processes but also affect the status of fish populations. In previous studies, high temperature induced apoptosis and oxidative stress. However, the precise mechanism and the pathways that are activated in fish are still unclear. In the present study, we investigated the effects of high temperature (34°C) on the induction of apoptosis and oxidative stress in pufferfish (Takifugu obscurus) blood cells. The data showed that high temperature exposure increased oxygen species (ROS), cytoplasmic free-Ca(2+) concentration and cell apoptosis. To test the apoptotic pathway, the expression pattern of some key apoptotic related genes including P53, Bax, caspase 9 and caspase 3 were examined. The results showed that acute high temperature stress induced up-regulation of these genes, suggesting that the p53-Bax pathway and the caspase-dependent apoptotic pathway could be involved in apoptosis induced by high temperature stress. Furthermore, the gene expression of antioxidant enzymes (Cu/Zn-SOD, Mn-SOD, CAT, GPx, and GR) and heat shock proteins (HSP90 and HSP70) in the blood cells were induced by high temperature stress. Taken together, our results showed that high temperature-induced oxidative stress may cause pufferfish blood cells apoptosis, and cooperatively activated p53-Bax and caspase-dependent apoptotic pathway. PMID:26590470

  13. High temperature behavior of nanostructured Al powders obtained by mechanical alloying under NH3 flow

    NASA Astrophysics Data System (ADS)

    Caballero, E. S.; Cintas, J.; Cuevas, F. G.; Montes, J. M.; Herrera-Garca, M.

    2015-03-01

    Aluminium powder was mechanically alloyed under ammonia gas flow for different times (1-5 h) in order to produce a second-phase reinforcement, mainly by aluminium nitride (AlN). After milling, powders were consolidated by cold uniaxial pressing and vacuum sintering. A small amount of copper powder was added to the Al milled powder to improve its sintering behavior. Hardness and indirect tensile test were carried out at room and high temperature to evaluate the mechanical properties evolution. Results showed an remarkable hardness increase with the second phases content, even at high temperature (up to 229 HB at 400 C). However, the high content of second phases of ceramic nature decreases the ductility, resulting in low values of tensile strength (lower than 160 MPa).

  14. Low Cost Al-Si Casting Alloy As In-Situ Composite for High Temperature Applications

    NASA Technical Reports Server (NTRS)

    Lee, Jonathan A.

    2000-01-01

    A new aluminum-silicon (Al-Si) alloy has been successfully developed at NASA- Marshall Space Flight Center (MSFC) that has significant improvement in tensile and fatigue strength at elevated temperatures (500 F-700 F). The alloy offers a number of benefits such as light weight, high hardness, low thermal expansion and high surface wear resistance. In hypereutectic form, this alloy is considered as an in-situ Al-Si composite with tensile strength of about 90% higher than the auto industry 390 alloy at 600 F. This composite is very economically produced by using either conventional permanent steel molds or die casting. The projected material cost is less than $0.90 per pound, and automotive components such as pistons can be cast for high production rate using conventional casting techniques with a low and fully accounted cost. Key Words: Metal matrix composites, In-situ composite, aluminum-silicon alloy, hypereutectic alloy, permanent mold casting, die casting.

  15. Time exposure studies on stress corrosion cracking of aluminum 2014-T6, 2219-T87, 2014-T651, 7075-T651, and titanium 6Al-4V

    NASA Technical Reports Server (NTRS)

    Terrell, J.

    1973-01-01

    The effect of a constant applied stress in crack initiation of aluminum 2014-T6, 2219-T87, 2014-T651, 7075-T651 and titanium 6Al-4V has been investigated. Aluminum c-ring specimens (1-inch diameter) and u-band titanium samples were exposed continuously to a 3.5% NaCl solution (pH 7) and organic fluids of ethyl, methyl, and iso-propyl alcohol (reagent purity), and demineralized distilled water. Corrosive action was observed to begin during the first and second day of constant exposure as evidenced by accumulation of hydrogen bubbles on the surface of stressed aluminum samples. However, titanium stressed specimens showed no reactions to its environment. Results of this investigation seems to suggest that aluminum 2014-T6, aluminum 7075-T651 and aluminum 2014-T651 are susceptible to stress corrosion cracking in chloride solution (NaCl), while aluminum 2219-T87 seem to resist stress corrosion cracking in sodium chloride at three levels of stress (25%, 50%, and 75% Y.S.). In organic fluids of methyl, ethyl, and iso-propyl alcohol, 2014-T6 and 7075-T651 did not fail by SCC; but 2014-T651 was susceptible to SCC in methly alcohol, but resistant in ethyl alcohol, iso-propyl alcohol and demineralized distilled water.

  16. The interface debond stress in single and multiple SiC fiber/Ti-6Al-4V composites under transverse tension

    SciTech Connect

    Gundel, D.B.; Warrier, S.G.; Miracle, D.B.

    1997-03-01

    The cruciform specimen, which effectively eliminates the influence of the fiber-free surface intersection, has recently been introduced to characterize the transverse tensile response of fiber-reinforced composites. In the present study, extensive transverse tensile testing of single and multiple-fiber specimens of SCS-6 SiC fiber/Ti-6Al-4V composites was performed. Poor consolidation and specimen damage prior to the test, when present, caused the measured interface strength to be low. The debond stress was relatively insensitive to specimen thickness between 200 and 500 {micro}m. The average remote debond stress of well-consolidated, damage-free specimens was 322 {plus_minus} 14 MPa, while a Weibull analysis indicated that the characteristic strength was 328 MPa and the Weibull modulus was 27. Stress analyses suggest that, at this level of remote stress, the interface supports a tensile stress of approximately 120 MPa, which is much greater strength than previously thought. Multiple-ply, multiple-fiber specimens were found to have nearly the same remote debond stress as the single-fiber specimens.

  17. Characterization of transgenic Arabidopsis plants overexpressing high mobility group B proteins under high salinity, drought or cold stress.

    PubMed

    Kwak, Kyung Jin; Kim, Joo Yeol; Kim, Yeon Ok; Kang, Hunseung

    2007-02-01

    High mobility group B (HMGB) proteins found in the nuclei of higher eukaryotes play roles in various cellular processes such as replication, transcription and nucleosome assembly. The Arabidopsis thaliana genome contains eight genes encoding HMGB proteins, the functions of which remain largely unknown in the transcriptional regulation of plant stress responses. To understand better the functions of HMGB proteins in the responses of plants to environmental stimuli, we examined the effect of various abiotic stresses on germination and growth of transgenic Arabidopsis plants that overexpress a single isoform of HMGB. The expression of HMGB2, HMGB3 and HMGB4 was up-regulated by cold stress, whereas the expression of HMGB2 and HMGB3 was markedly down-regulated by drought or salt stress. Under salt or drought stress, the transgenic Arabidopsis plants that overexpress HMGB2 displayed retarded germination and subsequent growth compared with wild-type plants. Overexpression of HMGB4 had no impact on seed germination and seedling growth of the plants under the stress conditions tested. In contrast to no significant stress-related phenotypes of HMGB5-overexpressing plants, loss-of-function mutants of HMGB5 displayed retarded germination and subsequent growth compared with wild-type plants under stress conditions. Although transcript levels of various stress-responsive genes were not modulated by the expression of HMGB2, expression of several germination-responsive genes was modulated by HMGB2 under salt stress. Taken together, these results provide a novel basis for understanding the biological functions of HMGB protein family members that differently affect germination and seedling growth of Arabidopsis plants under various stress conditions. PMID:17169924

  18. Stress effects on rats chronically receiving a highly palatable diet are sex-specific.

    PubMed

    Fachin, Andrelisa; Silva, Rachel Krolow S; Noschang, Cristie G; Pettenuzzo, Leticia; Bertinetti, Liane; Billodre, Mauro Nör; Peres, William; Busnello, Fernanda; Dalmaz, Carla

    2008-11-01

    The stress response is known to lead to behavioral and metabolic changes. Exposure to chronic stress can promote the development of physiological and behavioral dysfunctions, including alterations in feeding behavior. The aim of this study was to verify whether chronic restraint stress alters the consumption of a highly palatable, highly caloric diet (chocolate), chronically offered to the animals. Male rats ate more chocolate than females, and they also exhibited a higher weight gain, abdominal fat deposition, and higher plasma levels of total cholesterol, LDL-cholesterol and glucose. The stress exposure decreased body weight, increased adrenal weight and decreased plasma insulin levels. Overall, female rats had lower plasma insulin levels and chocolate consumption prevented the increased adrenal gland weight after exposure to chronic stress, suggesting a reduction of stress effects induced by palatable food consumption. Taken together, these results suggest a peculiar metabolic pattern, related to energy store and expenditure, in stressed animals receiving a palatable diet. Since these effects were sex-specific, we may also propose that females and males subjected to restraint stress and chocolate consumption are differentially affected. PMID:18524415

  19. High temperature strength and ductility of recrystallized Ni3Al-Ni3Mn alloys

    NASA Astrophysics Data System (ADS)

    Masahashi, N.; Takasugi, T.; Izumi, O.

    1988-02-01

    The tensile properties of pseudobinary Ll3-type intermetallic compounds based on Ni3Al and Ni3Mn were examined on recrystallized specimens. The alloys with manganese composition lower than 15 at. pct were tested from room temperature to 1073 K (1273 K for some alloys). The yield stress appears to be controlled by solid solution hardening (athermal component) at room temperature and by the so-called Kear-Wilsdorf mechanism (thermal component) at elevated temperatures. The activation constant for the latter mechanism, i.e., for the anomalous positive temperature depen-dence of the yield stress, increases with increasing the manganese composition. The tensile elongation shows a maximum at 9 at. pct Mn and at intermediate temperatures (?700 K). Also, at sufficient higher temperatures (1273 K), an increase of elongation due to dynamic recrystallization was ob-served. The temperature and compositional dependence of the ultimate tensile strength are similar to that of the elongation. The fracture mode was closely correlated with the elongation behavior: the more the transgranular fracture, the higher the ductility.

  20. Abnormal positive bias stress instability of In-Ga-Zn-O thin-film transistors with low-temperature Al2O3 gate dielectric

    NASA Astrophysics Data System (ADS)

    Chang, Yu-Hong; Yu, Ming-Jiue; Lin, Ruei-Ping; Hsu, Chih-Pin; Hou, Tuo-Hung

    2016-01-01

    Low-temperature atomic layer deposition (ALD) was employed to deposit Al2O3 as a gate dielectric in amorphous In-Ga-Zn-O thin-film transistors fabricated at temperatures below 120 °C. The devices exhibited a negligible threshold voltage shift (ΔVT) during negative bias stress, but a more pronounced ΔVT under positive bias stress with a characteristic turnaround behavior from a positive ΔVT to a negative ΔVT. This abnormal positive bias instability is explained using a two-process model, including both electron trapping and hydrogen release and migration. Electron trapping induces the initial positive ΔVT, which can be fitted using the stretched exponential function. The breakage of residual AlO-H bonds in low-temperature ALD Al2O3 is triggered by the energetic channel electrons. The hydrogen atoms then diffuse toward the In-Ga-Zn-O channel and induce the negative ΔVT through electron doping with power-law time dependence. A rapid partial recovery of the negative ΔVT after stress is also observed during relaxation.

  1. Optimal microelectromechanical systems (MEMS) device for achieving high pyroelectric response of AlN

    NASA Astrophysics Data System (ADS)

    Kebede, Bemnnet; Coutu, Ronald A.; Starman, LaVern

    2014-03-01

    This paper discusses research being conducted on aluminum nitride (AlN) as a pyroelectric material for use in detecting applications. AlN is being investigated because of its high pyroelectric coefficient, thermal stability, and high Curie temperature. In order to determine suitability of the pyroelectric properties of AlN for use as a detector, testing of several devices was conducted. These devices were fabricated using microelectromechanical systems (MEMS) fabrication processes; the devices were also designed to allow for voltage and current measurements. The deposited AlN films used were 150 nm - 300 nm in thickness. Thin-films were used to rapidly increase the temperature response after the thermal stimulus was applied to the pyroelectric material. This is important because the pyroelectric effect is directly proportional to the rate of temperature change. The design used was a face-electrode bridge that provides thermal isolation which minimizes heat loss to the substrate, thereby increasing operation frequency of the pyroelectric device. A thermal stimulus was applied to the pyroelectric material and the response was measured across the electrodes. A thermal imaging camera was used to monitor the changes in temperature. Throughout the testing process, the annealing temperatures, type of layers, and thicknesses were also varied. These changes resulted in improved MEMS designs, which were fabricated to obtain an optimal design configuration for achieving a high pyroelectric response. A pyroelectric voltage response of 38.9 mVp-p was measured without filtering, 12.45 mVp-p was measured in the infrared (IR) region using a Si filter, and 6.38 mVp-p was measured in the short wavelength IR region using a long pass filter. The results showed that AlN's pyroelectric properties can be used in detecting applications.

  2. Twin Roll Casting of Al-Mg Alloy with High Added Impurity Content

    NASA Astrophysics Data System (ADS)

    Kumar, S.; Hari Babu, N.; Scamans, G. M.; Fan, Z.; O'Reilly, K. A. Q.

    2014-06-01

    The microstructural evolution during twin roll casting (TRC) and downstream processing of AA5754 Al alloy with high added impurity content have been investigated. Strip casts with a high impurity content resulted in coarse ?-Al grains and complex secondary phases. The grain size and centerline segregation reduced significantly on the addition of Al-Ti-B grain refiner (GR). Coarse-dendrite arm spacing (DAS) "floating" grains are observed in the impure alloy (IA) with higher volume in the GR strips. Two-dimensional (2D) metallographic analysis of the as-cast strip suggests that secondary phases (Fe-bearing intermetallics and Mg2Si) are discrete and located at the ?-Al cell/grain boundaries, while three-dimensional (3D) analysis of extracted particles revealed that they were intact, well interconnected, and located in interdendritic regions. Homogenizing heat treatment of the cast strip breaks the interconnective networks and modifies the secondary phases to a more equiaxed morphology. During rolling, the equiaxed secondary phases align along the rolling direction. X-ray diffraction (XRD) analysis suggests that ?-Al(FeMn)Si and Mg2Si are the predominant secondary phases that are formed during casting and remain throughout the downstream processing of the GR-IA. The high-impurity sheet processed from TRC resulted in superior strength and ductility over the sheet processed from small book mold ingot casting. The current study has shown that the TRC process can tolerate higher impurity levels and produce formable sheets from the recycled aluminum for structural applications.

  3. Resonant tunneling via stress-induced valence-band mixings in GaAs-(Ga,Al)As asymmetrical double quantum wells

    NASA Astrophysics Data System (ADS)

    Lefebvre, P.; Bonnel, P.; Gil, B.; Mathieu, H.

    1991-09-01

    Optical band-to-band transition energies and oscillator strengths are calculated in the envelope-function approximation, for GaAs-(Ga,Al)As asymmetrically coupled double quantum wells, subjected to externally applied in-plane uniaxial stress. It is shown that the spatial probability distribution of holes should be strongly affected by this perturbation, due to the superimposition of stress-induced mixings of valence states, together with tunneling effects across the thin intermediate barrier. As a consequence, the electron and hole envelope functions overlap, and thus the probability of a given subband-to-subband transition is expected to be modified. Since simple, parity-related selection rules are no longer in effect in such structures, due to the lack of symmetry, the optical transitions are expected to shift, appear, or disappear, depending on the initial degree of coupling between the quantum wells, and on the magnitude of the stress.

  4. Combined effects of weld-induced residual stresses and flaws on the fracture strength of Ti-5Al-2.5Sn

    NASA Technical Reports Server (NTRS)

    Hall, L. R.

    1973-01-01

    The combined effects of weld-induced residual stresses and flaws on fracture strength were experimentally evaluated by testing Ti-5Al-2.5Sn surface flawed specimens at -320F (-195C) in liquid nitrogen. Flaws were located in weld metal with crack planes either parallel to or perpendicular to gas tungsten arc weld centerlines, and in base metal with the crack plane perpendicular to the rolling direction. Tests were conducted using two different flaw sizes to effect fracture stresses at two different levels including one level either at or near, and one level well below the tensile yield strength. Three different residual stress levels were generated, measured, and tested. Results were evaluated using modified linear elastic fracture mechanics theory.

  5. High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities

    SciTech Connect

    Kuszelewicz, R.; Benoit, J.-M.; Barbay, S.; Lemaitre, A.; Patriarche, G.; Meunier, K.; Tierno, A.; Ackemann, T.

    2012-02-15

    Structural and optical properties of InAlAs/GaAlAs quantum dots grown by molecular beam epitaxy are studied using transmission electron microscopy and temperature- and time-resolved photoluminescence. The control of the recombination lifetime (50 ps-1.25 ns) and of the dot density (5.10{sup -8}-2.10{sup 11} cm{sup -3}) strongly suggest that these material systems can find wide applications in opto-electronic devices as focusing non-linear dispersive materials as well as fast saturable absorbers.

  6. Investigation of smooth specimen scc test procedures; variations in environment, specimen size, stressing frame, and stress state. [for high strength aluminum alloys

    NASA Technical Reports Server (NTRS)

    Lifka, B. W.; Sprowls, D. O.; Kelsey, R. A.

    1975-01-01

    The variables studied in the stress-corrosion cracking performance of high strength aluminum alloys were: (1) corrosiveness of the environment, (2) specimen size and stiffness of the stressing system, (3) interpretation of transgranular cracking, and (4) interaction of the state of stress and specimen orientation in a product with an anisotropic grain structure. It was shown that the probability of failure and time to fracture for a specimen loaded in direct tension are influenced by corrosion pattern, the stressing assembly stiffness, and the notch tensile strength of the alloy. Results demonstrate that the combination of a normal tension stress and a shear stress acting on the plane of maximum susceptibility in a product with a highly directional grain cause the greatest tendency for stress-corrosion cracking.

  7. Aftershocks are well aligned with the background stress field, contradicting the hypothesis of highly-heterogeneous crustal stress

    USGS Publications Warehouse

    Hardebeck, Jeanne L.

    2010-01-01

    It has been proposed that the crustal stress field contains small-length-scale heterogeneity of much larger amplitude than the uniform background stress. This model predicts that earthquake focal mechanisms should reflect the loading stress rather than the uniform background stress. So, if the heterogeneous stress hypothesis is correct, focal mechanisms before and after a large earthquake should align with the tectonic loading and the earthquake-induced static stress perturbation, respectively. However, I show that the off-fault triggered aftershocks of the 1992 M7.3 Landers, California, earthquake align with the same stress field as the pre-Landers mechanisms. The aftershocks occurred on faults that were well oriented for failure in the pre-Landers stress field and then loaded by the Landers-induced static stress change. Aftershocks in regions experiencing a 0.05 to 5 MPa coseismic differential stress change align with the modeled Landers-induced static stress change, implying that they were triggered by the stress perturbation. Contrary to the heterogeneous stress hypothesis, these triggered aftershocks are also well aligned with the pre-Landers stress field obtained from inverting the pre-Landers focal mechanisms. Therefore, the inverted pre-Landers stress must represent the persistent background stress field. Earthquake focal mechanisms provide an unbiased sample of the spatially coherent background stress field, which is large relative to any small-scale stress heterogeneity. The counterexample provided by the Landers earthquake is strong evidence that the heterogeneous stress model is not widely applicable.

  8. Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template

    NASA Astrophysics Data System (ADS)

    Selvaraj, Josephine; Selvaraj, Susai Lawrence; Miyoshi, Makoto; Kuraoka, Yoshitaka; Tanaka, Mitsuhiro; Egawa, Takashi

    2009-04-01

    InAlN/GaN epilayer on AlN/Sapphire template was grown by metalorganic chemical vapor deposition (MOCVD) with a very high electron sheet carrier density ns = 2.61013 cm-2 and a Hall mobility as high as Hall = 1170 cm2 V-1 s-1 at room temperature. The electrical characteristics of the fabricated high-electron-mobility transistors (HEMTs) having 2 m gate length and 15 m gate width were demonstrated. Maximal-drain-current IDmax = 1299 mA/mm, and maximal transconductance gmmax = 280 mS/mm were achieved for the InAlN barrier layer thickness of 10 nm. Reduced current collapse and as well as breakdown voltage as high as 400 V were observed.

  9. MCrAlY Bondcoats by High-Velocity Atmospheric Plasma Spraying

    NASA Astrophysics Data System (ADS)

    Mauer, G.; Sebold, D.; Vaen, R.

    2014-01-01

    MCrAlY bondcoats (M = Co, Ni) are used to protect metallic substrates from oxidation and to improve adhesion of ceramic thermal barrier coatings for high temperature applications, such as in land-based and aviation turbines. Since MCrAlYs are prone to take up oxygen during thermal spraying, bondcoats often are manufactured under inert gas conditions at low pressure. Plasma spraying at atmospheric conditions is a cost-effective alternative if it would be possible to limit the oxygen uptake as well as to obtain sufficiently dense microstructures. In the present work, high-velocity spray parameters were developed for the TriplexPro 210 three-cathode plasma torch using MCrAlY powders of different particle size fractions to achieve these objectives. The aims are conflictive since the former requires cold conditions, whereas the latter is obtained by more elevated particle temperatures. High particle velocities can solve this divergence as they imply shorter time for oxidation during flight and contribute to coating densification by kinetic rather than thermal energy. Further aims of the experimental work were high deposition efficiencies as well as sufficient surface roughness. The oxidation behavior of the sprayed coatings was characterized by thermal gravimetric analyses and isothermal heat treatments.

  10. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Uren, M. J.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Keller, S.; Kolluri, S.; Mishra, U. K.

    2014-08-11

    The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.

  11. High resolution microstructure characterization of the interface between cold sprayed Al coating and Mg alloy substrate

    NASA Astrophysics Data System (ADS)

    Wang, Qiang; Qiu, Dong; Xiong, Yuming; Birbilis, Nick; Zhang, Ming-Xing

    2014-01-01

    High-resolution transmission electron microscopy (HR-TEM) has validated the intimate metallurgical (atomic) bond formed along the interface of a cold-sprayed Al coating upon an Mg-alloy (AZ91) substrate. The compressive impact led to the formation of nanostructured layers of about 300-500 nm into the substrate. A highly distorted lattice structure with the inclusion of small amorphous zones was observed at the periphery of the particle/substrate interface, as a result of adiabatic shear plastic deformation at a high strain rate.

  12. Double recessed AlInAs/GaInAs/InP HEMTs with high breakdown voltages

    SciTech Connect

    Hur, K.Y.; McTaggart, R.A.; LeBlanc, B.W.

    1995-12-31

    A double recessed T-gate process has been successfully utilized to increase gate-to-drain breakdown voltages of double pulse doped AlInAs/GaInAs/InP HEMTs. By varying lateral channel dimensions, breakdown voltages in the range 11-19 V can be tailored with maximum channel currents in the range 450-600 mA/mm. This combination of high breakdown voltages and high channel currents indicate that the double recess process is a promising approach for high power applications.

  13. High resolution electron microscopy study of a high Cu variant of Weldalite (tm) 049 and a high strength Al-Cu-Ag-Mg-Zr alloy

    NASA Technical Reports Server (NTRS)

    Herring, R. A.; Gayle, Frank W.; Pickens, Joseph R.

    1991-01-01

    Weldalite (trademark) 049 is an Al-Cu-Li-Ag-Mg alloy that is strengthened in artificially aged tempers primarily by very thin plate-like precipitates lying on the set of (111) matrix planes. This precipitate might be expected to be the T(sub 1) phase, Al2CuLi, which has been observed in Al-Cu-Li alloys. However, in several ways this precipitate is similar to the omega phase which also appears as the set of (111) planes plates and is found in Al-Cu-Ag-Mg alloys. The study was undertaken to identify the set of (111) planes precipitate or precipitates in Weldalite (trademark) 049 in the T8 (stretched and artificially aged) temper, and to determine whether T(sub 1), omega, or some other phase is primarily responsible for the high strength (i.e., 700 MPa tensile strength) in this Al-Cu-Li-Ag-Mg alloy.

  14. High-Temperature Sliding Wear Testing of Cathodic Arc Physical Vapor Deposition AlTiN- and AlTiON-Coated Hot Work Tool Steels

    NASA Astrophysics Data System (ADS)

    Birol, Yucel; Isler, Duygu; Urgen, Mustafa

    2011-11-01

    Thin hard coatings provide the much needed protection for steel thixoforming tools that must resist wear at high temperatures. The wear resistance of AlTiN- and AlTiON-coated hot work tool steel was investigated at 1023 K (750 C), measured to be the cavity surface temperature shortly after the steel slurry was forced into the thixoforming die. The wear tests were repeated in exactly the same fashion with uncoated tool steel samples to identify the impact of AlTiN and AlTiON coatings on the high-temperature wear performance of X32CrMoV33 tool steel. The nature, the thickness, and the adherence of the oxide scales impact the tribological behavior. The poor adherence and limited ductility of ferrous oxides promote the failure of the oxide scale impairing the resistance to wear of the hot work tool steel at elevated temperatures. The substantial softening in the X32CrMoV33 hot work tool steel is also critical in the wear volume loss it suffers. AlTiN and AlTiON coatings, on the other hand, form a stable and protective oxide surface layer at high temperatures and therefore provide an enhanced resistance to oxidation. The latter is relatively more resistant to oxidation and is thus the better of the two coatings tested in the present work.

  15. Aquaporin-deficient mutant of Synechocystis is sensitive to salt and high-light stress.

    PubMed

    Sinetova, Maria A; Mironov, Kirill S; Mustardy, Laszlo; Shapiguzov, Alexey; Bachin, Dmitry; Allakhverdiev, Suleyman I; Los, Dmitry A

    2015-11-01

    Cyanobacterial aquaporins play an important role in the regulation of various physiological functions: cell volume control, osmotic stress responses, gas exchange. We employed the AqpZ-deficient mutant of Synechocystis to study the role of aquaporins in responses to salt (NaCl) and high light stress. Electron microscopy and paramagnetic resonance revealed that AqpZ-deficient cells are unable to efficiently regulate the cytoplasmic volume under salt stress. Both photosystems (PSII and, especially, PSI) of these cells are more sensitive to NaCl and to high light. Thus, AqpZ of Synechocystis participates in regulation of the photosynthetic activity of PSI and PSII under salt and high-light stress. Our results demonstrate that AqpZ might be necessary for the repair of PSII and PSI after photodamage. PMID:26228718

  16. Optimizing amorphous indium zinc oxide film growth for low residual stress and high electrical conductivity

    NASA Astrophysics Data System (ADS)

    Kumar, Mukesh; Sigdel, A. K.; Gennett, T.; Berry, J. J.; Perkins, J. D.; Ginley, D. S.; Packard, C. E.

    2013-10-01

    With recent advances in flexible electronics, there is a growing need for transparent conductors with optimum conductivity tailored to the application and nearly zero residual stress to ensure mechanical reliability. Within amorphous transparent conducting oxide (TCO) systems, a variety of sputter growth parameters have been shown to separately impact film stress and optoelectronic properties due to the complex nature of the deposition process. We apply a statistical design of experiments (DOE) approach to identify growth parameter-material property relationships in amorphous indium zinc oxide (a-IZO) thin films and observed large, compressive residual stresses in films grown under conditions typically used for the deposition of highly conductive samples. Power, growth pressure, oxygen partial pressure, and RF power ratio (RF/(RF + DC)) were varied according to a full-factorial test matrix and each film was characterized. The resulting regression model and analysis of variance (ANOVA) revealed significant contributions to the residual stress from individual growth parameters as well as interactions of different growth parameters, but no conditions were found within the initial growth space that simultaneously produced low residual stress and high electrical conductivity. Extrapolation of the model results to lower oxygen partial pressures, combined with prior knowledge of conductivity-growth parameter relationships in the IZO system, allowed the selection of two promising growth conditions that were both empirically verified to achieve nearly zero residual stress and electrical conductivities >1480 S/cm. This work shows that a-IZO can be simultaneously optimized for high conductivity and low residual stress.

  17. Synthesis and characterization of terephthalate-intercalated NiAl layered double hydroxides with high Al content.

    PubMed

    Arias, Santiago; Eon, Jean Guillaume; San Gil, Rosane A S; Licea, Yordy E; Palacio, Luz Amparo; Faro, Arnaldo C

    2013-02-14

    Terephthalate-intercalated nickel-aluminum layered double hydroxides (LDHs) were prepared by a co-precipitation method, with nominal x values in the general formula Ni((1-x))Al(x)(OH)(2)(C(8)H(4)O(4))(x/2) in the range 0.3-0.8. The materials were characterized by X-ray diffraction, X-ray fluorescence spectroscopy, CHN analysis, thermogravimetric analysis, FTIR spectroscopy, EXAFS at the Ni edge and (27)Al NMR spectroscopy. A combination of XRD, XRF and CHN analysis indicated that crystalline LDHs with true x values up to 0.5 were obtained, along with increasing segregation of an aluminum hydroxide phase with increasing aluminum content. The EXAFS analysis indicated an upper limit of ca. 0.6 for the atomic fraction of aluminum at the second nickel coordination sphere. The (27)Al NMR analysis suggested that a phase containing octahedrally co-ordinated Al(3+) is segregated for nominal x values from 0.6 upwards. PMID:23188191

  18. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

    NASA Astrophysics Data System (ADS)

    Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Look, D. C.; Chow, P. P.

    2008-08-01

    Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm2/V s) and sheet charge density (>31013 cm-2), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to 100 ?/? at room temperature. Fabricated 1.2 ?m gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of 1.3 A/mm and a peak transconductance of 260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented.

  19. Assessing Cumulative Thermal Stress in Fish During Chronic Exposure to High Temperature

    SciTech Connect

    Bevelhimer, M.S.; Bennett, W.R.

    1999-11-14

    As environmental laws become increasingly protective, and with possible future changes in global climate, thermal effects on aquatic resources are likely to receive increasing attention. Lethal temperatures for a variety of species have been determined for situations where temperatures rise rapidly resulting in lethal effects. However, less is known about the effects of chronic exposure to high (but not immediately lethal) temperatures and even less about stress accumulation during periods of fluctuating temperatures. In this paper we present a modeling framework for assessing cumulative thermal stress in fish. The model assumes that stress accumulation occurs above a threshold temperature at a rate depending on the degree to which the threshold is exceeded. The model also includes stress recovery (or alleviation) when temperatures drop below the threshold temperature as in systems with large daily variation. In addition to non-specific physiological stress, the model also simulates thermal effects on growth.

  20. High Porosity Alumina as Matrix Material for Composites of Al-Mg Alloys

    NASA Astrophysics Data System (ADS)

    Gmze, L. A.; Gmze, L. N.; Egsz, .; Ojima, F.

    2013-12-01

    The sophisticated industry and technologies require higher and higher assumptions against mechanical strength and surface hardness of ceramic reinforced metal alloys and metal matrix composites. Applying the well-known alumina powders by dry pressing technology and some special pore-forming additives and sintering technology the authors have successfully developed a new, high porosity alumina matrix material for composites of advenced Al-Mg alloys. The developed new matrix material have higher than 30% porosity, with homogenous porous structure and pore sizes from few nano up to 2-3 mm depending on the alloys containments. Thanks to the used materials and the sintering conditions the authors could decrease the wetting angles less than 90 between the high porosity alumina matrix and the Al-Mg alloys. Applied analytical methods in this research were laser granulometry, scanning electron microscopy, and X-ray diffraction. Digital image analysis was applied to microscopy results, to enhance the results of transformation.