Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

NASA Astrophysics Data System (ADS)

Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

2016-12-01

Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

Liquid Nitrogen as Fast High Voltage Switching Medium

NASA Astrophysics Data System (ADS)

Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

2002-12-01

Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

Delayed avalanche breakdown of high-voltage silicon diodes: Various structures exhibit different picosecond-range switching behavior

NASA Astrophysics Data System (ADS)

Brylevskiy, Viktor; Smirnova, Irina; Gutkin, Andrej; Brunkov, Pavel; Rodin, Pavel; Grekhov, Igor

2017-11-01

We present a comparative study of silicon high-voltage diodes exhibiting the effect of delayed superfast impact-ionization breakdown. The effect manifests itself in a sustainable picosecond-range transient from the blocking to the conducting state and occurs when a steep voltage ramp is applied to the p+-n-n+ diode in the reverse direction. Nine groups of diodes with graded and abrupt pn-junctions have been specially fabricated for this study by different techniques from different Si substrates. Additionally, in two groups of these structures, the lifetime of nonequilibrium carriers was intentionally reduced by electron irradiation. All diodes have identical geometrical parameters and similar stationary breakdown voltages. Our experimental setup allows measuring both device voltage and current during the kilovolt switching with time resolution better than 50 ps. Although all devices are capable of forming a front with kilovolt amplitude and 100 ps risetime in the in-series load, the structures with graded pn-junctions have anomalously large residual voltage. The Deep Level Transient Spectroscopy study of all diode structures has been performed in order to evaluate the effect of deep centers on device performance. It was found that the presence of deep-level electron traps negatively correlates with parameters of superfast switching, whereas a large concentration of recombination centers created by electron irradiation has virtually no influence on switching characteristics.

Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

NASA Astrophysics Data System (ADS)

Ren, F.; Hwang, Y.-H.; Pearton, S. J.; Patrick, Erin; Law, Mark E.

2015-03-01

Proton irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside proton irradiation. By taking the advantage of the steep drop at the end of proton energy loss profile, the defects created by the proton irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the proton energy of 225 or 275 keV, for which the defects created by the proton irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the 2 dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV protons not only showed degradation of drain current, but also exhibited improvement of the off-state drain breakdown voltage. FLOODS TCAD finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.

Effects of load voltage on voltage breakdown modes of electrical exploding aluminum wires in air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Jian; Li, Xingwen, E-mail: xwli@mail.xjtu.edu.cn; Yang, Zefeng

The effects of the load voltage on the breakdown modes are investigated in exploding aluminum wires driven by a 1 kA, 0.1 kA/ns pulsed current in air. From laser probing images taken by laser shadowgraphy, schlieren imaging, and interferometry, the position of the shockwave front, the plasma channel, and the wire core edge of the exploding product can be determined. The breakdown mode makes a transition from the internal mode, which involves breakdown inside the wire core, to the shunting mode, which involves breakdown in the compressed air, with decreasing charging voltage. The breakdown electrical field for a gaseous aluminum wire coremore » of nearly solid density is estimated to be more than 20 kV/cm, while the value for gaseous aluminum of approximately 0.2% solid density decreases to 15–20 kV/cm. The breakdown field in shunting mode is less than 20 kV/cm and is strongly affected by the vaporized aluminum, the desorbed gas, and the electrons emitted from the wire core during the current pause. Ohmic heating during voltage collapses will induce further energy deposition in the current channel and thus will result in different expansion speeds for both the wire core and the shockwave front in the different modes.« less

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties. Part 2; Dynamic Breakdown Properties

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Fazi, Christian

1999-01-01

This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

NASA Astrophysics Data System (ADS)

Watahiki, Tatsuro; Yuda, Yohei; Furukawa, Akihiko; Yamamuka, Mikio; Takiguchi, Yuki; Miyajima, Shinsuke

2017-11-01

Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.

Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications

NASA Astrophysics Data System (ADS)

Du, Jiangfeng; Li, Zhenchao; Liu, Dong; Bai, Zhiyuan; Liu, Yang; Yu, Qi

2017-11-01

In this work, a vertical GaN p-n diode with a high-K/low-K compound dielectric structure (GaN CD-VGD) is proposed and designed to achieve a record high breakdown voltage (BV) with a low specific on-resistance (Ron,sp). By introducing compound dielectric structure, the electric field near the p-n junction interface is suppressed due to the effects of high-K passivation layer, and a new electric field peak is induced into the n-type drift region, because of a discontinuity of electrical field at the interface of high-K and low-K layer. Therefore the distribution of electric field in GaN p-n diode becomes more uniform and an enhancement of breakdown voltage can be achieved. Numerical simulations demonstrate that GaN CD-VGD with a BV of 10650 V and a Ron,sp of 14.3 mΩ cm2, resulting in a record high figure-of-merit of 8 GW/cm2.

High Voltage Discharge Profile on Soil Breakdown Using Impulse Discharge

NASA Astrophysics Data System (ADS)

Fajingbesi, F. E.; Midi, N. S.; Elsheikh, E. M. A.; Yusoff, S. H.

2017-06-01

Grounding terminals are mandatory in electrical appliance design as they provide safety route during overvoltage faults. The soil (earth) been the universal ground is assumed to be at zero electric potential. However, due to properties like moisture, pH and available nutrients; the electric potential may fluctuate between positive and negative values that could be harmful for internally connected circuits on the grounding terminal. Fluctuations in soil properties may also lead to current crowding effect similar to those seen at the emitters of semiconductor transistors. In this work, soil samples are subjected to high impulse voltage discharge and the breakdown characteristics was profiled. The results from profiling discharge characteristics of soil in this work will contribute to the optimization of grounding protection system design in terms of electrode placement. This would also contribute to avoiding grounding electrode current crowding, ground potential rise fault and electromagnetic coupling faults.

High voltage breakdown phenomena in RF window, electron gun and RF cavities in 250 kW CW C band Klystron and their preventive measures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamba, O.S.; Badola, Richa; Baloda, Suman

The paper describes voltage break down phenomenon and preventive measures in components of 250 KW CW, C band Klystron under development at CEERI Pilani. The Klystron operates at a beam voltage of 50 kV and delivers 250 kW RF power at 5 GHz frequency. The Klystron consists of several key components and regions, which are subject to high electrical stress. The most important regions of electrical breakdown are electron gun, the RF ceramic window and output cavity gap area. In the critical components voltage breakdown considered at design stage by proper gap and other techniques. All these problems discussed, asmore » well as solution to alleviate this problem. The electron gun consists basically of cathode, BFE and anode. The cathode is operated at a voltage of 50 kV. In order to maintain the voltage standoff between cathode and anode a high voltage alumina seal and RF window have been designed developed and successfully used in the tube. (author)« less

The Significance of Breakdown Voltages for Quality Assurance of Low-Voltage BME Ceramic Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Application of thin dielectric, base metal electrode (BME) ceramic capacitors for high-reliability applications requires development of testing procedures that can assure high quality and reliability of the parts. In this work, distributions of breakdown voltages (VBR) in variety of low-voltage BME multilayer ceramic capacitors (MLCCs) have been measured and analyzed. It has been shown that analysis of the distributions can indicate the proportion of defective parts in the lot and significance of the defects. Variations of the distributions after solder dip testing allow for an assessment of the robustness of capacitors to soldering-related stresses. The drawbacks of the existing screening and qualification methods to reveal defects in high-value, low-voltage MLCCs and the importance of VBR measurements are discussed. Analysis has shown that due to a larger concentration of oxygen vacancies, defect-related degradation of the insulation resistance (IR) and failures are more likely in BME compared to the precious metal electrode (PME) capacitors.

Electrical system for measurement of breakdown voltage of vacuum and gas-filled tubes using a dynamic method

NASA Astrophysics Data System (ADS)

Pejović, Milić M.; Milosavljević, Čedomir S.; Pejović, Momčilo M.

2003-06-01

This article describes an electrical system aimed at measuring and data acquisition of breakdown voltages of vacuum and gas-filled tubes. The measurements were performed using a nitrogen-filled tube at 4 mbar pressure. Based on the measured breakdown voltage data as a function of the applied voltage increase rate, a static breakdown voltage is estimated for the applied voltage gradient ranging from 0.1 to 1 V s-1 and from 1 to 10 V s-1. The histograms of breakdown voltages versus applied voltage increase rates from 0.1 and 0.5 V s-1 are approximated by the probability density functions using a fitting procedure.

Experimental Study on the Dielectric Breakdown Voltage of the Insulating Oil Mixed with Magnetic Nanoparticles

NASA Astrophysics Data System (ADS)

Lee, Jong-Chul; Kim, Woo-Young

In this study, we have measured the dielectric breakdown voltage of transformer oil-based nanofluids in accordance with IEC 156 standard and have investigated the dielectric breakdown performance with the application of an external magnetic field and different volume concentrations of magnetic nanoparticles. It is confirmed that the dielectric breakdown voltage of pure transformer oil is about 10 kV with a gap distance of 1 mm between electrodes. In the case of our transformer oil-based nanofluids with 0.08% < Φ < 0.39% (Φ means the volume concentration of magnetic nanoparticles in the fluid), the dielectric breakdown voltage is three times higher than that of pure transformer oil. Furthermore, when the external magnetic field is applied under the experimental vessel, the dielectric breakdown voltage of the nanofluids is above 40 kV, which is 30% higher than that without the external magnetic field.

The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

NASA Astrophysics Data System (ADS)

Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

2018-02-01

A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

Breakdown voltage determination of gaseous and near cryogenic fluids with application to rocket engine ignition

NASA Astrophysics Data System (ADS)

Nugent, Nicholas Jeremy

Liquid rocket engines extensively use spark-initiated torch igniters for ignition. As the focus shifts to longer missions that require multiple starts of the main engines, there exists a need to solve the significant problems associated with using spark-initiated devices. Improving the fundamental understanding of predicting the required breakdown voltage in rocket environments along with reducing electrical noise is necessary to ensure that missions can be completed successfully. To better understand spark ignition systems and add to the fundamental research on spark development in rocket applications, several parameter categories of interest were hypothesized to affect breakdown voltage: (i) fluid, (ii) electrode, and (iii) electrical. The fluid properties varied were pressure, temperature, density and mass flow rate. Electrode materials, insert electrode angle and spark gap distance were the electrode properties varied. Polarity was the electrical property investigated. Testing how breakdown voltage is affected by each parameter was conducted using three different isolated insert electrodes fabricated from copper and nickel. A spark plug commonly used in torch igniters was the other electrode. A continuous output power source connected to a large impedance source and capacitance provided the pulsing potential. Temperature, pressure and high voltage measurements were recorded for the 418 tests that were successfully completed. Nitrogen, being inert and similar to oxygen, a propellant widely used in torch igniters, was used as the fluid for the majority of testing. There were 68 tests completed with oxygen and 45 with helium. A regression of the nitrogen data produced a correction coefficient to Paschen's Law that predicts the breakdown voltage to within 3000 volts, better than 20%, compared to an over prediction on the order of 100,000 volts using Paschen's Law. The correction coefficient is based on the parameters most influencing breakdown voltage: fluid

Breakdown voltage reliability improvement in gas-discharge tube surge protectors employing graphite field emitters

NASA Astrophysics Data System (ADS)

Žumer, Marko; Zajec, Bojan; Rozman, Robert; Nemanič, Vincenc

2012-04-01

Gas-discharge tube (GDT) surge protectors are known for many decades as passive units used in low-voltage telecom networks for protection of electrical components from transient over-voltages (discharging) such as lightning. Unreliability of the mean turn-on DC breakdown voltage and the run-to-run variability has been overcome successfully in the past by adding, for example, a radioactive source inside the tube. Radioisotopes provide a constant low level of free electrons, which trigger the breakdown. In the last decades, any concept using environmentally harmful compounds is not acceptable anymore and new solutions were searched. In our application, a cold field electron emitter source is used as the trigger for the gas discharge but with no activating compound on the two main electrodes. The patent literature describes in details the implementation of the so-called trigger wires (auxiliary electrodes) made of graphite, placed in between the two main electrodes, but no physical explanation has been given yet. We present experimental results, which show that stable cold field electron emission current in the high vacuum range originating from the nano-structured edge of the graphite layer is well correlated to the stable breakdown voltage of the GDT surge protector filled with a mixture of clean gases.

Mason’s equation application for prediction of voltage of oil shale treeing breakdown

NASA Astrophysics Data System (ADS)

Martemyanov, S. M.

2017-05-01

The application of the formula, which is used to calculate the maximum field at the tip of the pin-plane electrode system was proposed to describe the process of electrical treeing and treeing breakdown in an oil shale. An analytical expression for the calculation of the treeing breakdown voltage in the oil shale, as a function of the inter-electrode distance, was taken. A high accuracy of the correspondence of the model to the experimental data in the range of inter-electrode distances from 0.03 to 0.5 m was taken.

Recent advances of high voltage AlGaN/GaN power HFETs

NASA Astrophysics Data System (ADS)

Uemoto, Yasuhiro; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke

2009-02-01

We review our recent advances of GaN-based high voltage power transistors. These are promising owing to low on-state resistance and high breakdown voltage taking advantages of superior material properties. However, there still remain a couple of technical issues to be solved for the GaN devices to replace the existing Si-based power devices. The most critical issue is to achieve normally-off operation which is strongly desired for the safety operation, however, it has been very difficult because of the built-in polarization electric field. Our new device called GIT (Gate Injection Transistor) utilizing conductivity modulation successfully achieves the normally-off operation keeping low on-state resistance. The fabricated GIT on a Si substrate exhibits threshold voltage of +1.0V. The obtained on-state resistance and off-state breakdown voltage were 2.6mΩ•cm2 and 800V, respectively. Remaining technical issue is to further increase the breakdown voltage. So far, the reported highest off-state breakdown voltage of AlGaN/GaN HFETs has been 1900V. Overcoming these issues by a novel device structure, we have demonstrated the world highest breakdown voltages of 10400V using thick poly-crystalline AlN as a passivation film and Via-holes through sapphire which enable very efficient layout of the lateral HFET array avoiding any undesired breakdown of passivation films. Since conventional wet or dry etching cannot be used for chemically stable sapphire, high power pulsed laser is used to form the via-holes. The presented GaN power devices demonstrate that GaN is advantageous for high voltage power switching applications replacing currently used Si-based power MOSFETs and IGBTs.

Study on high breakdown voltage GaN-based vertical field effect transistor with interfacial charge engineering for power applications

NASA Astrophysics Data System (ADS)

Du, Jiangfeng; Liu, Dong; Liu, Yong; Bai, Zhiyuan; Jiang, Zhiguang; Liu, Yang; Yu, Qi

2017-11-01

A high voltage GaN-based vertical field effect transistor with interfacial charge engineering (GaN ICE-VFET) is proposed and its breakdown mechanism is presented. This vertical FET features oxide trenches which show a fixed negative charge at the oxide/GaN interface. In the off-state, firstly, the trench oxide layer acts as a field plate; secondly, the n-GaN buffer layer is inverted along the oxide/GaN interface and thus a vertical hole layer is formed, which acts as a virtual p-pillar and laterally depletes the n-buffer pillar. Both of them modulate electric field distribution in the device and significantly increase the breakdown voltage (BV). Compared with a conventional GaN vertical FET, the BV of GaN ICE-VFET is increased from 1148 V to 4153 V with the same buffer thickness of 20 μm. Furthermore, the proposed device achieves a great improvement in the tradeoff between BV and on-resistance; and its figure of merit even exceeds the GaN one-dimensional limit.

A normally-off fully AlGaN HEMT with high breakdown voltage and figure of merit for power switch applications

NASA Astrophysics Data System (ADS)

Ebrahimi, Behzad; Asad, Mohsen

2015-07-01

In this paper, we propose a fully AlGaN high electron mobility (HEMT) in which the gate electrode, the barrier and the channel are all AlGaN. The p-type AlGaN gate facilitates the normally-off operation to be compatible with the state-of-the-art power amplifiers. In addition, the AlGaN channel increases the breakdown voltage (VBR) to 598 V due to the higher breakdown field of AlGaN compared to GaN. To assess the efficiency of the proposed structure, its characteristics are compared with the conventional and recently proposed structures. The two-dimensional device simulation results show that the proposed structure has the highest threshold voltage (Vth) and the VBR with the moderately low ON-resistance (RON). These features lead to the highest figure of merit (2.49 × 1012) among the structures which is 83%, 59%, 47% and 49% more than those of the conventional, with a field plate, AlGaN gate and AlGaN channel structures, respectively.

Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my

2014-03-24

Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

Breakdown Voltage of CF3CHCl2 gas an Alternative to SF6 Gas using HV Test and Bonding Energy Methods

NASA Astrophysics Data System (ADS)

Juliandhy, Tedy; Haryono, T.; Suharyanto; Perdana, Indra

2018-04-01

For more than two decades of Sulphur Hexafluoride (SF6) gases is used as a gas insulation in high voltage equipment especially in substations. In addition to getting an advantage as an insulating gas. SF6 gas is recognized as one of the greenhouse effect gases that cause global warming. Under the Kyoto Protocol, SF6 gas is one of those gases whose use is restricted and gradually reduced to the presence of a replacement gas for SF6 gas. One of the alternative gas alternatives which have the potential of replacing SF6 gas as an insulating gas in Gas Insulated Switchgear (GIS) equipment in the substation is Dichlorotrifluoroethane (CF3CHCl2) gas. The purpose of this paper is to enable a comparison of breakdown voltage with high voltage test and method of calculating Bonding energy to Dichlorotrifluoroethane gas as substitute gas for SF6 gas. At 0.1 bar gas pressure obtained an average breakdown voltage of 18.68 kV / mm at 25oC chamber temperature and has the highest breakdown voltage at 50oC with a breakdown voltage of 19.56 kV / mm. The CF3CHCl2 gas has great potential as an insulating gas because it has more insulation ability high of SF6 gas, and is part of the gas recommended under the Kyoto Protocol. Gas CF3CHCl2 has the capacity to double the value of electronegativity greater than SF6 gas as a major requirement of gas isolation and has a value of Global Warming Potential (GWP) and Ozone Depleting lower than from SF6 gas.

Ionizing potential waves and high-voltage breakdown streamers.

NASA Technical Reports Server (NTRS)

Albright, N. W.; Tidman, D. A.

1972-01-01

The structure of ionizing potential waves driven by a strong electric field in a dense gas is discussed. Negative breakdown waves are found to propagate with a velocity proportional to the electric field normal to the wavefront. This causes a curved ionizing potential wavefront to focus down into a filamentary structure, and may provide the reason why breakdown in dense gases propagates in the form of a narrow leader streamer instead of a broad wavefront.

High-Voltage Breakdown Penalties for the Beam-Breakup Instability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ekdahl, Carl August

2016-11-22

The strength of the dangerous beam breakup (BBU) instability in linear induction accelerators (LIAs) is determined by the transverse coupling impedance Z ⊥ of the induction cell cavity. For accelerating gap width w less than the beam pipe radius b, the transverse impedance is theoretically proportional to w/b, favoring narrow gaps to suppress BBU. On the other hand, cells with narrow gaps cannot support high accelerating gradients, because of electrical breakdown and shorting of the gap. Thus, there is an engineering trade-off between BBU growth and accelerating gradient, which must be considered for next generation LIAs now being designed. Inmore » this article this tradeoff is explored, using a simple pillbox cavity as an illustrative example. For this model, widening the gap to reduce the probability of breakdown increases BBU growth, unless higher magnetic focusing fields are used to further suppress the instability.« less

A method for encapsulating high voltage power transformers

NASA Astrophysics Data System (ADS)

Sanchez, Robert O.

Voltage breakdowns become a major concern in reducing the size of high-voltage power converter transformers. Even the smallest of voids can provide a path for corona discharge which can cause a dielectric breakdown leading to a transformer failure. A method of encapsulating small high voltage transformers has been developed. The method virtually eliminates voids in the impregnation material, provides an exceptional dielectric between windings and provides a mechanically rugged package. The encapsulation material is a carboxyl terminated butadiene nitril (CTBN) modified mica filled epoxy. The method requires heat/vacuum to impregnate the coil and heat/pressure to cure the encapsulant. The transformer package utilizes a diallyl phthalate (DAP) contact assembly in which a coated core/coil assembly is mounted and soldered. This assembly is then loaded into an RTV mold and the encapsulation process begins.

Al0 0.3Ga 0.7N PN diode with breakdown voltage >1600 V

DOE PAGES

Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; ...

2016-07-21

Demonstration of Al0 0.3Ga 0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm 2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm 2 is limited by the lateral conductivity of the n-type contact layer requiredmore » by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (V br 2/R spec,on) of 150 MW/cm 2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.« less

Breakdown voltage mapping through voltage dependent ReBEL intensity imaging of multi-crystalline Si solar cells

NASA Astrophysics Data System (ADS)

Dix-Peek, RM.; van Dyk, EE.; Vorster, FJ.; Pretorius, CJ.

2018-04-01

Device material quality affects both the efficiency and the longevity of photovoltaic (PV) cells. Therefore, identifying these defects can be beneficial in the development of more efficient and longer lasting PV cells. In this study, a combination of spatially-resolved, electroluminescence (EL), and light beam induced current (LBIC) measurements, were used to identify specific defects and features of a multi-crystalline Si PV cells. In this study, a novel approach is used to map the breakdown voltage of a PV cell through voltage dependent Reverse Bias EL (ReBEL) intensity imaging.

Inner surface flash-over of insulator of low-inductance high-voltage self-breakdown gas switch and its application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hong-bo, E-mail: walkman67@163.com; Liu, Jin-liang

2014-04-15

In this paper, the inner surface flash-over of high-voltage self-breakdown switch, which is used as a main switch of pulse modulator, is analyzed in theory by employing the method of distributed element equivalent circuit. Moreover, the field distortion of the switch is simulated by using software. The results of theoretical analysis and simulation by software show that the inner surface flash-over usually starts at the junction points among the stainless steel, insulator, and insulation gas in the switch. A switch with improved structure is designed and fabricated according to the theoretical analysis and simulation results. Several methods to avoid innermore » surface flash-over are used to improve the structure of switch. In experiment, the inductance of the switch is no more than 100 nH, the working voltage of the switch is about 600 kV, and the output voltage and current of the accelerator is about 500 kV and 50 kA, respectively. And the zero-to-peak rise time of output voltage at matched load is less than 30 ns due to the small inductance of switch. The original switch was broken-down after dozens of experiments, and the improved switch has been worked more than 200 times stably.« less

Physical mechanisms for reduction of the breakdown voltage in the circuit of a rod lightning protector with an opening microswitch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bobrov, Yu. K.; Zhuravkov, I. V.; Ostapenko, E. I.

2010-12-15

The effect of air gap breakdown voltage reduction in the circuit with an opening microswitch is substantiated from the physical point of view. This effect can be used to increase the efficiency of lightning protection system with a rod lightning protector. The processes which take place in the electric circuit of a lightning protector with a microswitch during a voltage breakdown are investigated. Openings of the microswitch are shown to lead to resonance overvoltages in the dc circuit and, as a result, efficient reduction in the breakdown voltage in a lightning protector-thundercloud air gap.

Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

NASA Astrophysics Data System (ADS)

Onufriyev, Valery. V.

2001-02-01

It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

High stored-energy breakdown tests on electrodes made of stainless steel, copper, titanium and molybdenum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Esch, H. P. L. de, E-mail: hubert.de-esch@cea.fr; Simonin, A.; Grand, C.

2015-04-08

IRFM have conducted resilience tests on electrodes made of Cu, stainless steel 304L, Ti and Mo against breakdowns up to 170 kV and 300 J. The tests of the 10×10 cm{sup 2} electrodes have been performed at an electrode distance d=11 mm under vacuum (P∼5×10{sup −6} mbar). No great difference in voltage holding between the materials could be identified; all materials could reach a voltage holding between 140 and 170 kV over the 11 mm gap, i.e. results scatter within a ±10% band. After exposure to ∼10000 seconds of high-voltage (HV) on-time, having accumulated ∼1000 breakdowns, the electrodes were inspected. The anodes were covered with largemore » and small craters. The rugosity of the anodes had increased substantially, that of the cathodes to a lesser extent. The molybdenum electrodes are least affected, but this does not show in their voltage holding capability. It is hypothesized that penetrating high-energy electrons from the breakdown project heat below the surface of the anode and cause a micro-explosion of material when melting point is exceeded. Polished electrodes have also been tested. The polishing results in a substantially reduced breakdown rate in the beginning, but after having suffered a relatively small number (∼100) of breakdowns, the polished electrodes behaved the same as the unpolished ones.« less

Statistical characteristics of transient enclosure voltage in ultra-high-voltage gas-insulated switchgear

NASA Astrophysics Data System (ADS)

Cai, Yuanji; Guan, Yonggang; Liu, Weidong

2017-06-01

Transient enclosure voltage (TEV), which is a phenomenon induced by the inner dielectric breakdown of SF6 during disconnector operations in a gas-insulated switchgear (GIS), may cause issues relating to shock hazard and electromagnetic interference to secondary equipment. This is a critical factor regarding the electromagnetic compatibility of ultra-high-voltage (UHV) substations. In this paper, the statistical characteristics of TEV at UHV level are collected from field experiments, and are analyzed and compared to those from a repeated strike process. The TEV waveforms during disconnector operations are recorded by a self-developed measurement system first. Then, statistical characteristics, such as the pulse number, duration of pulses, frequency components, magnitude and single pulse duration, are extracted. The transmission line theory is introduced to analyze the TEV and is validated by the experimental results. Finally, the relationship between the TEV and the repeated strike process is analyzed. This proves that the pulse voltage of the TEV is proportional to the corresponding breakdown voltage. The results contribute to the definition of the standard testing waveform of the TEV, and can aid the protection of electronic devices in substations by minimizing the threat of this phenomenon.

High-Voltage Characterization for the Prototype Induction Cells

NASA Astrophysics Data System (ADS)

Huacen, Wang; Kaizhi, Zhang; Long, Wen; Qinggui, Lai; Linwen, Zhang; Jianjun, Deng

2002-12-01

Two linear induction prototype cells expected to work at 250kV, 3kA,with accelerating voltage flattop (±1%) ⩾ 70ns, have been tested to determine their high-voltage characteristics. Each cell is composed of a ferrite core immersed in oil, a gap with curved stainless steel electrodes, a solenoid magnet, and a insulator. The experiments were carried out with full-scale cells. The high voltage pulses were applied to two cells using a 100ns, 12Ω pulse Blumlein. The tests were performed at various high-voltage levels ranging from -250kV to -350kV. No breakdown was observed during the test at vacuum level (7-10) ṡ10-4 Pa. The cell schematic, the experimental set up, and the measured voltage waveforms are presented in this paper.

Analytical solutions for avalanche-breakdown voltages of single-diffused Gaussian junctions

NASA Astrophysics Data System (ADS)

Shenai, K.; Lin, H. C.

1983-03-01

Closed-form solutions of the potential difference between the two edges of the depletion layer of a single diffused Gaussian p-n junction are obtained by integrating Poisson's equation and equating the magnitudes of the positive and negative charges in the depletion layer. By using the closed form solution of the static Poisson's equation and Fulop's average ionization coefficient, the ionization integral in the depletion layer is computed, which yields the correct values of avalanche breakdown voltage, depletion layer thickness at breakdown, and the peak electric field as a function of junction depth. Newton's method is used for rapid convergence. A flowchart to perform the calculations with a programmable hand-held calculator, such as the TI-59, is shown.

Effects of Displacement Damage on the Time-Resolved Gain and Bandwidth of a Low Breakdown Voltage Si Avalanche Photodiode

NASA Technical Reports Server (NTRS)

Laird, Jamie S.; Onoda, Shinobu; Hirao, Toshio; Becker, Heidi; Johnston, Allan; Laird, Jamie S.; Itoh, Hisayoshi

2006-01-01

Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.

High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

NASA Astrophysics Data System (ADS)

Cho, Doohyung; Sim, Seulgi; Park, Kunsik; Won, Jongil; Kim, Sanggi; Kim, Kwangsoo

2015-12-01

In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure. The ESL-TMBS rectifier has a 7.4% lower forward voltage drop and a 24% higher breakdown voltage. However, this structure has a reverse leakage current that is approximately three times higher than that of a conventional TMBS rectifier owing to the reduction in energy barrier height. This problem is solved when ESL is used partially, since its use provides a reverse leakage current that is comparable to that of a conventional TMBS rectifier. Thus, the forward voltage drop and breakdown voltage improve without any loss in static and dynamic characteristics in the ESL-TMBS rectifier compared with the performance of a conventional TMBS rectifier.

Experiments with high-voltage insulators in the presence of tritium

NASA Astrophysics Data System (ADS)

Grisham, L. R.; Falter, H.; Causey, R.; Chrisman, W.; Stevenson, T.; Wright, K.

1991-02-01

During the final deuterium-tritium phases of the TFTR and JET tokamaks half of the neutral injectors will be used to produce tritium neutral beams to maintain an equal mix of deuterium and tritium in the core plasma, and such requirements may also occur in future devices. This will require that the voltage hold off capabilities of the high voltage insulators in the accelerators be unimpaired by any charge buildups associated with the beta decay of adsorbed layers. We report tests in which we measured the drain currents under high dc voltage of TFTR and JET accelerator insulators while they were successively exposed to vacuum, deuterium and tritium. There did not appear to be any substantial reduction in hold-off capability with tritium, although at some voltages there was a small increase in the leakage current. We also compared the breakdown properties of a plastic tubing filled with deuterium and then tritium at varying pressures, since such tubing has been considered as a high-voltage break in the gas feed system for TFTR, and the presence of large numbers of electron-ion pairs might lead to enhanced Paschen breakdown. We found no significant differences in the behavior for the geometry used.

Forecasting of high voltage insulation performance: Testing of recommended potting materials and of capacitors

NASA Technical Reports Server (NTRS)

Bever, R. S.

1984-01-01

Nondestructive high voltage test techniques (mostly electrical methods) are studied to prevent total or catastrophic breakdown of insulation systems under applied high voltage in space. Emphasis is on the phenomenon of partial breakdown or partial discharge (P.D.) as a symptom of insulation quality, notably partial discharge testing under D.C. applied voltage. Many of the electronic parts and high voltage instruments in space experience D.C. applied stress in service, and application of A.C. voltage to any portion thereof would be prohibited. Suggestions include: investigation of the ramp test method for D.C. partial discharge measurements; testing of actual flight-type insulation specimen; perfect plotting resin samples with controlled defects for test; several types of plotting resins and recommendations of the better ones from the electrical characteristics; thermal and elastic properties are also considered; testing of commercial capaciters; and approximate acceptance/rejection/rerating criteria for sample test elements for space use, based on D.C. partial discharge.

Numerical characterization of plasma breakdown in reversed field pinches

NASA Astrophysics Data System (ADS)

Peng, Yanli; Zhang, Ya; Mao, Wenzhe; Yang, Zhoujun; Hu, Xiwei; Jiang, Wei

2018-02-01

In the reversed field pinch, there is considerable interest in investigating the plasma breakdown. Indeed, the plasma formed during the breakdown may have an influence on the confinement and maintenance in the latter process. However, up to now there has been no related work, experimentally or in simulation, regarding plasma breakdown in reversed field pinch (RFP). In order to figure out the physical mechanism behind plasma breakdown, the effects of the toroidal and error magnetic field, as well as the loop voltage have been studied. We find that the error magnetic field cannot be neglected even though it is quite small in the short plasma breakdown phase. As the toroidal magnetic field increases, the averaged electron energy is reduced after plasma breakdown is complete, which is disadvantageous for the latter process. In addition, unlike the voltage limits in the tokamak, loop voltages can be quite high because there are no requirements for superconductivity. Volt-second consumption has a small difference under different loop voltages. The breakdown delay still exists in various loop voltage cases, but it is much shorter compared to that in the tokamak case. In all, successful breakdowns are possible in the RFP under a fairly broad range of parameters.

Ultra-compact Marx-type high-voltage generator

DOEpatents

Goerz, David A.; Wilson, Michael J.

2000-01-01

An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

Improving breakdown voltage performance of SOI power device with folded drift region

NASA Astrophysics Data System (ADS)

Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

2016-07-01

A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

Scintillation Breakdowns in Chip Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2008-01-01

Scintillations in solid tantalum capacitors are momentarily local breakdowns terminated by a self-healing or conversion to a high-resistive state of the manganese oxide cathode. This conversion effectively caps the defective area of the tantalum pentoxide dielectric and prevents short-circuit failures. Typically, this type of breakdown has no immediate catastrophic consequences and is often considered as nuisance rather than a failure. Scintillation breakdowns likely do not affect failures of parts under surge current conditions, and so-called "proofing" of tantalum chip capacitors, which is a controllable exposure of the part after soldering to voltages slightly higher than the operating voltage to verify that possible scintillations are self-healed, has been shown to improve the quality of the parts. However, no in-depth studies of the effect of scintillations on reliability of tantalum capacitors have been performed so far. KEMET is using scintillation breakdown testing as a tool for assessing process improvements and to compare quality of different manufacturing lots. Nevertheless, the relationship between failures and scintillation breakdowns is not clear, and this test is not considered as suitable for lot acceptance testing. In this work, scintillation breakdowns in different military-graded and commercial tantalum capacitors were characterized and related to the rated voltages and to life test failures. A model for assessment of times to failure, based on distributions of breakdown voltages, and accelerating factors of life testing are discussed.

Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate

NASA Astrophysics Data System (ADS)

Choi, J.-H.; Cho, C.-H.; Cha, H.-Y.

2018-06-01

Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3 epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown voltage by suppressing the electric field at the anode edge. TCAD simulation was used for the physical analysis of Ga2O3 SBDs from which it was found that careful attention must be paid to the insulator under the field plate. Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.

A study of dielectric breakdown along insulators surrounding conductors in liquid argon

DOE PAGES

Lockwitz, Sarah; Jostlein, Hans

2016-03-22

High voltage breakdown in liquid argon is an important concern in the design of liquid argon time projection chambers, which are often used as neutrino and dark matter detectors. We have made systematic measurements of breakdown voltages in liquid argon along insulators surrounding negative rod electrodes where the breakdown is initiated at the anode. The measurements were performed in an open cryostat filled with commercial grade liquid argon exposed to air, and not the ultra-pure argon required for electron drift. While not addressing all high voltage concerns in liquid argon, these measurements have direct relevance to the design of highmore » voltage feedthroughs especially for averting the common problem of flash-over breakdown. The purpose of these tests is to understand the effects of materials, of breakdown path length, and of surface topology for this geometry and setup. We have found that the only material-specific effects are those due to their permittivity. We have found that the breakdown voltage has no dependence on the length of the exposed insulator. Lastly, a model for the breakdown mechanism is presented that can help inform future designs.« less

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Meng; Zhao, Yuning; Yan, Xiaodong

2015-12-07

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

Breakdown characteristics of atmospheric dielectric barrier discharge in gas flow condition

NASA Astrophysics Data System (ADS)

Fan, Zhihui; Yan, Huijie; Wang, Yuying; Liu, Yidi; Guo, Hongfei; Ren, Chunsheng

2018-05-01

Experimental investigations of the breakdown characteristics of plate-to-plate dielectric barrier discharge excited by an AC source at different gas flow conditions are carried out. The ignition voltage for the appearance of the very first discharge filament and the breakdown voltage in each discharge half cycle in continuous operation are examined. As revealed by the results of the indoor air experiment, the ignition voltage manifests a monotonous increase with the increase in the gas flow rate, while the breakdown voltage has a marked decline at the low gas flow rate and increases slightly as the gas flow rate is higher than 10 m/s. As regards the obvious decreases in the ignition voltage and breakdown voltage, the decrease in the humidity with the increase in the gas flow rate plays a dominant role. As regards the increase in breakdown voltage, the memory effect from the preceding discharge is considered. The losses of metastable particles, together with particles having high translational energy in the gas flow, are considered to be the most critical factors.

An Introduction to Electrical Breakdown in Dielectrics

DTIC Science & Technology

1985-04-01

PROJECT TASK WORK UNIT ELEMENT NO. NO. NO. NO. 11TI TL E ’tniclude Security Classification) AN INTRODUCTION TO ELECTRICAL 1PERSONAL AUTHOR(S...find themselves working in the area without the benefit of formal coursework. inAlthough the title of the course was High Voltage Engineer- inI titled...this work , "An Introduction to Electrical Breakdown * Phenomena," because breakdown may occur at low voltages when spacecraft systems are considered

Subnanosecond breakdown in high-pressure gases

NASA Astrophysics Data System (ADS)

Naidis, George V.; Tarasenko, Victor F.; Babaeva, Natalia Yu; Lomaev, Mikhail I.

2018-01-01

Pulsed discharges in high-pressure gases are of considerable interest as sources of nonequilibrium plasma for various technological applications: pollution control, pumping of laser media, plasma-assisted combustion, etc. Recently, attention has been attracted to the use of subnanosecond voltage fronts, producing diffuse discharges with radii of several millimeters. Such plasma structures, similar to pulsed glow discharges, are of special interest for applications due to quasi-uniformity of plasma parameters in relatively large gas volumes. This review presents the results of experimental and computational study of subnanosecond diffuse discharge formation. A description of generators of short high-voltage pulses with subnanosecond fronts and of discharge setups is given. Diagnostic methods for the measurement of various discharge parameters with high temporal and spatial resolution are described. Obtained experimental data on plasma properties for a wide range of governing factors are discussed. A review of various theoretical approaches used for computational study of the dynamics and structure of fast ionization waves is given; the applicability of conventional fluid streamer models for simulation of subnanosecond ionization waves is discussed. Calculated spatial-temporal profiles of plasma parameters during streamer propagation are presented. The efficiency of subnanosecond discharges for the production of reactive species is evaluated. On the basis of the comparison of simulation results and experimental data the effects of various factors (voltage rise time, polarity, etc.) on discharge characteristics are revealed. The major physical phenomena governing the properties of subnanosecond breakdown are analyzed.

High voltage and high current density vertical GaN power diodes

DOE PAGES

Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; ...

2016-01-01

We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm 2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm 2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

High Voltage, Low Inductance Hydrogen Thyratron Study Program.

DTIC Science & Technology

1981-01-01

E-E Electrode Spacing Ef Cathode Heater Voltage egy Peak Forward Grid Voltage epy Peak Forward Anode Voltage epx Peak Inverse Anode Voltage Eres... electrodes . ........... 68 30 Marx generator used for sample testing. ........... 68 31 Waveforms showing sample holdoff and sample breakdown 73 32...capability (a function of gas pressure and electrode spacing) could be related to its current rise time capability (a function of gas pressure and inductance

Determination of threshold and maximum operating electric stresses for selected high voltage insulations. Task 2: Investigation of oil-filled paper insulated cables

NASA Astrophysics Data System (ADS)

Sosnowski, M.; Eager, G. S., Jr.

1983-06-01

Threshold voltage of oil-impregnated paper insulated cables are investigaed. Experimental work was done on model cables specially manufactured for this project. The cables were impregnated with mineral and with synthetic oils. Standard impulse breakdown voltage tests and impulse voltage breakdown tests with dc prestressing were performed at room temperature and at 1000C. The most important result is the finding of very high level of threshold voltage stress for oil-impregnated paper insulated cables. This threshold voltage is approximately 1.5 times higher than the threshold voltage or crosslinked polyethylene insulated cables.

The effects of extraterrestrial environments on high voltage distribution

NASA Technical Reports Server (NTRS)

Gordon, Lloyd B.

1990-01-01

The problems encountered in the transmission of high-power (kilowatts to megawatts) in extraterrestrial environments are reviewed. A summary of the work at Auburn University in the study of these problems is presented. These studies include high-voltage breakdown in the space environment as influenced by gas contamination and thermal stress, the modeling of lunar transmission lines, particle contamination, and material degradation by the hypervelocity impact of microparticles.

The Breakdown Characteristics of the Silicone Oil for Electric Power Apparatus

NASA Astrophysics Data System (ADS)

Yoshida, Hisashi; Yanabu, Satoru

The basic breakdown characteristics of the silicone oil as an insulating medium was studied with aim of realization of electric power apparatus which may be considered to be SF6 free and flame-retarding. As the first step, the impulse breakdown characteristics was measured with three kinds of electrodes whose electric field distributions differed. The breakdown characteristics in silicone oil was explained in relation to stressed oil volume (SOV) and the breakdown stress. At the second step the surface breakdown characteristic for impulse voltage was measured with two kinds of insulators which was set to between plane electrodes. The surface breakdown characteristic for impulse voltage was explained in relation to the ratio of the relative permittivity of oil and insulator. And on the third step, the breakdown characteristics of oil gap after interrupting small capacitive current was studied. In this experiment, the disconnecting switch to interrupt capacitive current was simulated by oil gap after interrupting impulse current, and to measure breakdown characteristics the high impulse voltage was subsequently applied. The breakdown stress in silicone oil after application of impulse current was discussed for insulation recovery characteristics.

Experimental validation of prototype high voltage bushing

NASA Astrophysics Data System (ADS)

Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

2017-08-01

Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

Investigation of problems associated with solid encapsulation of high voltage electronic assemblies; also Reynolds connector study

NASA Technical Reports Server (NTRS)

Bever, R. S.

1975-01-01

Electric breakdown prevention in vacuum and encapsulation of high voltage electronic circuits was studied. The lap shear method was used to measure adhesive strengths. The permeation constants of air at ambient room temperature through four different space-grade encapsulants was measured. Order of magnitude was calculated for the time that air bubble pressures drop to the corona region. High voltage connectors with L-type cable attached were tested in a vacuum system at various pressures. The cable system was shown to suppress catastrophic breakdown when filled with and surrounded by gas in the corona region of pressures, but did not prove to be completely noise free.

High Voltage Design Guide. Volume IV. Aircraft

DTIC Science & Technology

1983-01-01

35.5 35.5 354 XS 80 42.5 M 46 05 70.5 70.5 70.5 70.5 70.5 70.5 70.5 70.5 70.5 100 90. 60.0 74 8 9 89 as Be 89 Be 89 s9 s9 20 98.0 103 120 160 168 170 170...THE GAS PRESSURE IS 1 ATM. 41 400 400 350 SF6 -N2 1 100%SF 6 350 SF6 .AIR 2= 50% SF 6 UNIFORM FIELD .00 3- 20% SF6 D4=I 3%SF, 00 1cm SPACING 5 A0...BREAKDOWN VOLTAGES AS A FIGURE 118 BREAKDOWN VOLTAGES AS A FUNCTION OF GAS PRESSURE FUNCTION OF GAS PRESSURE MIXTURES FOR SF6 -AR MIXTURES 400 SF 6 "C02 350

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

NASA Astrophysics Data System (ADS)

Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Yamamuka, Mikio

2017-06-01

In this study, we successfully fabricated vertical GaN merged PiN Schottky (MPS) diodes and comparatively investigated the cyclic p-GaN width (W p) dependence of their electrical characteristics, including turn-on voltage and reverse leakage current. The MPS diodes with W p of more than 6 µm can turn on at around 3 V. Increasing W p can suppress the reverse leakage current. Moreover, the vertical GaN MPS diode with the breakdown voltage of 2 kV was realized for the first time.

Specific Localization of High-Voltage Discharge in Vicinity of Two Gases

NASA Astrophysics Data System (ADS)

Leonov, Sergey; Shurupov, Michail; Shneider, Michail; Napartovich, Anatoly; Kochetov, Igor

2011-10-01

A subject of paper is the appearance and dynamics of sub-microsecond long filamentary high-voltage discharge generated in atmosphere, and in non-homogeneous gaseous media. Typical discharge parameters are: maximal current 1-3kA, breakdown voltage >100 kV, duration 30-100 ns, gap distance 50-100mm. The effect of discharge specific localization within mixing layer of two gases is particularly discussed. The second discussed idea is the filamentary discharge movement within a region with concentration gradient of different components. For the short-pulse discharge the physical mechanism appears as the following. The first stage of the spark breakdown is the multiple streamers propagation from the high-voltage electrode toward the grounded one. In case of high-power electrical source those streamers occupy a huge volume of the gas, covering all possible paths for the further development. The next phase consists of the real selection of the discharge path among the multiple channels with non-zero conductivity. Experiments and calculations are presented for Air-CO2 and Air-C2H4 pairs. The effects found are supposed to be applied for lightning prediction/protection, and for high-speed mixing acceleration. The work was funded through EOARD-ISTC project #3793p. Some part of this work was supported by RFBR grant #10-08-00952.

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Huang, Wei; Dudley, Michael

1999-01-01

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Comparative analysis of cellulose pressboard and aramid paper used in air insulation systems of high-voltage devices

NASA Astrophysics Data System (ADS)

Turba, Tomasz; Frącz, Paweł

2017-10-01

The paper presents results of a comparative analysis of parameters of two kinds of solid dielectrics used in air insulation systems to prevent occurring partial discharges. The research works regarded materials made of: cellulose pressboard and aramid paper. All measurements were performed under laboratory conditions by changing the value of partial discharges generation voltage until breakdown occurred in the inhomogeneous environment that was simulated using needle-plate (made of copper) electrode system. The main contribution which resulted from studies is a statement that potential use of aramid paper as a dielectric can extend the life of a high voltage electric device as compared to standard cellulose pressboard usage due to higher electric resistances to breakdown or detection of corona voltage. Results shown that the aramid paper has greater electric resistance to breakdown in comparison to cellulose with no difference between both on detecting corona of partial discharge.

Investigation of Dielectric Breakdown Characteristics for Double-break Vacuum Interrupter and Dielectric Breakdown Probability Distribution in Vacuum Interrupter

NASA Astrophysics Data System (ADS)

Shioiri, Tetsu; Asari, Naoki; Sato, Junichi; Sasage, Kosuke; Yokokura, Kunio; Homma, Mitsutaka; Suzuki, Katsumi

To investigate the reliability of equipment of vacuum insulation, a study was carried out to clarify breakdown probability distributions in vacuum gap. Further, a double-break vacuum circuit breaker was investigated for breakdown probability distribution. The test results show that the breakdown probability distribution of the vacuum gap can be represented by a Weibull distribution using a location parameter, which shows the voltage that permits a zero breakdown probability. The location parameter obtained from Weibull plot depends on electrode area. The shape parameter obtained from Weibull plot of vacuum gap was 10∼14, and is constant irrespective non-uniform field factor. The breakdown probability distribution after no-load switching can be represented by Weibull distribution using a location parameter. The shape parameter after no-load switching was 6∼8.5, and is constant, irrespective of gap length. This indicates that the scatter of breakdown voltage was increased by no-load switching. If the vacuum circuit breaker uses a double break, breakdown probability at low voltage becomes lower than single-break probability. Although potential distribution is a concern in the double-break vacuum cuicuit breaker, its insulation reliability is better than that of the single-break vacuum interrupter even if the bias of the vacuum interrupter's sharing voltage is taken into account.

High voltage studies of inverted-geometry ceramic insulators for a 350 kV DC polarized electron gun

DOE PAGES

Hernandez-Garcia, C.; Poelker, M.; Hansknecht, J.

2016-02-01

Jefferson Lab is constructing a 350 kV direct current high voltage photoemission gun employing a compact inverted-geometry insulator. This photogun will produce polarized electron beams at an injector test facility intended for low energy nuclear physics experiments, and to assist the development of new technology for the Continuous Electron Beam Accelerator Facility. A photogun operating at 350kV bias voltage reduces the complexity of the injector design, by eliminating the need for a graded-beta radio frequency “capture” section employed to boost lower voltage beams to relativistic speed. However, reliable photogun operation at 350 kV necessitates solving serious high voltage problems relatedmore » to breakdown and field emission. This study focuses on developing effective methods to avoid breakdown at the interface between the insulator and the commercial high voltage cable that connects the photogun to the high voltage power supply. Three types of inverted insulators were tested, in combination with two electrode configurations. Our results indicate that tailoring the conductivity of the insulator material, and/or adding a cathode triple-junction screening electrode, effectively serves to increase the hold-off voltage from 300kV to more than 375kV. In conclusion, electrostatic field maps suggest these configurations serve to produce a more uniform potential gradient across the insulator.« less

High voltage studies of inverted-geometry ceramic insulators for a 350 kV DC polarized electron gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernandez-Garcia, C.; Poelker, M.; Hansknecht, J.

Jefferson Lab is constructing a 350 kV direct current high voltage photoemission gun employing a compact inverted-geometry insulator. This photogun will produce polarized electron beams at an injector test facility intended for low energy nuclear physics experiments, and to assist the development of new technology for the Continuous Electron Beam Accelerator Facility. A photogun operating at 350kV bias voltage reduces the complexity of the injector design, by eliminating the need for a graded-beta radio frequency “capture” section employed to boost lower voltage beams to relativistic speed. However, reliable photogun operation at 350 kV necessitates solving serious high voltage problems relatedmore » to breakdown and field emission. This study focuses on developing effective methods to avoid breakdown at the interface between the insulator and the commercial high voltage cable that connects the photogun to the high voltage power supply. Three types of inverted insulators were tested, in combination with two electrode configurations. Our results indicate that tailoring the conductivity of the insulator material, and/or adding a cathode triple-junction screening electrode, effectively serves to increase the hold-off voltage from 300kV to more than 375kV. In conclusion, electrostatic field maps suggest these configurations serve to produce a more uniform potential gradient across the insulator.« less

Effect of temperature on the electric breakdown strength of dielectric elastomer

NASA Astrophysics Data System (ADS)

Liu, Lei; Chen, Hualing; Sheng, Junjie; Zhang, Junshi; Wang, Yongquan; Jia, Shuhai

2014-03-01

DE (dielectric elastomer) is one of the most promising artificial muscle materials for its large strain over 100% under driving voltage. However, to date, dielectric elastomer actuators (DEAs) are prone to failure due to the temperature-dependent electric breakdown. Previously studies had shown that the electrical breakdown strength was mainly related to the temperature-dependent elasticity modulus and the permittivity of dielectric substances. This paper investigated the influence of ambient temperature on the electric breakdown strength of DE membranes (VHB4910 3M). The electric breakdown experiment of the DE membrane was conducted at different ambient temperatures and pre-stretch levels. The real breakdown strength was obtained by measuring the deformation and the breakdown voltage simultaneously. Then, we found that with the increase of the environment temperature, the electric breakdown strength decreased obviously. Contrarily, the high pre-stretch level led to the large electric breakdown strength. What is more, we found that the deformations of DEs were strongly dependent on the ambient temperature.

Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors

NASA Astrophysics Data System (ADS)

Yamazaki, Taisei; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki

2018-05-01

We investigated the impact of rounded electrode corners on the breakdown characteristics of AlGaN/GaN high-electron mobility transistors. For standard reference devices, catastrophic breakdown occurred predominantly near the sharp electrode corners. By introducing a rounded-electrode architecture, premature breakdown at the corners was mitigated. Moreover, the rate of breakdown voltage (V BR) degradation with an increasing gate width (W G) was significantly lower for devices with rounded corners. When W G was increased from 100 µm to 10 mm, the V BR of the reference device dropped drastically, from 1,200 to 300 V, whereas that of the rounded-electrode device only decreased to a respectable value of 730 V.

Space charge inhibition effect of nano-Fe{sub 3}O{sub 4} on improvement of impulse breakdown voltage of transformer oil based on improved Kerr optic measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Qing, E-mail: yangqing@cqu.edu.cn; Yu, Fei; Sima, Wenxia

Transformer oil-based nanofluids (NFs) with 0.03 g/L Fe{sub 3}O{sub 4} nanoparticle content exhibit 11.2% higher positive impulse breakdown voltage levels than pure transformer oils. To study the effects of the Fe{sub 3}O{sub 4} nanoparticles on the space charge in transformer oil and to explain why the nano-modified transformer oil exhibits improved impulse breakdown voltage characteristics, the traditional Kerr electro-optic field mapping technique is improved by increasing the length of the parallel-plate electrodes and by using a photodetector array as a high light sensitivity device. The space charge distributions of pure transformer oil and of NFs containing Fe{sub 3}O{sub 4} nanoparticlesmore » can be measured using the improved Kerr electro-optic field mapping technique. Test results indicate a significant reduction in space charge density in the transformer oil-based NFs with the Fe{sub 3}O{sub 4} nanoparticles. The fast electrons are captured by the nanoparticles and are converted into slow-charged particles in the NFs, which then reduce the space charge density and result in a more uniform electric field distribution. Streamer propagation in the NFs is also obstructed, and the breakdown strengths of the NFs under impulse voltage conditions are also improved.« less

Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications

NASA Astrophysics Data System (ADS)

Wang, Haiyong; Mao, Wei; Cong, Guanyu; Wang, Xiaofei; Du, Ming; Zheng, Xuefeng; Wang, Chong; Zhang, Jincheng; Hao, Yue

2018-07-01

A GaN-based current-aperture vertical electron transistor with source-connected field-plates (SFP-CAVET) is proposed and investigated by means of two-dimensional simulations. This device is characterized by the source-connected field-plates (SFP) at both sides, which leads to remarkable improvement of breakdown voltage (BV) without degradation of specific on-resistance (R on). Systematic analyses are conducted to reveal the mechanism of the SFP modulation effect on the potential and the electric field distributions and thus the BV improvement. Optimization and design of SFP-CAVET are performed for the maximum BV. Simulation results exhibit a R on of 2.25 mΩ · cm2 and a significantly enhanced BV of 3610 V in SFP-CAVET, indicating an average breakdown electric field of more than 240 V μm‑1. Compared with conventional CAVET, both BV and average breakdown electric field in SFP-CAVET are increased by more than 121% while R on remains unchanged. And the trade-off performance of BV and R on in SFP-CAVET is also better than that in GaN-based CAVET with superjunctions (SJ CAVET). In addition, the fabrication process issues of the proposed SFP-CAVET are also presented and discussed. These results could break a new path to further improve the trade-off performance of BV and R on in GaN-based vertical devices.

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes. Part 1; DC Properties

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Huang, Wei; Dudley, Michael

1998-01-01

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

A multi-functional high voltage experiment apparatus for vacuum surface flashover switch research.

PubMed

Zeng, Bo; Su, Jian-cang; Cheng, Jie; Wu, Xiao-long; Li, Rui; Zhao, Liang; Fang, Jin-peng; Wang, Li-min

2015-04-01

A multifunctional high voltage apparatus for experimental researches on surface flashover switch and high voltage insulation in vacuum has been developed. The apparatus is composed of five parts: pulse generating unit, axial field unit, radial field unit, and two switch units. Microsecond damped ringing pulse with peak-to-peak voltage 800 kV or unipolar pulse with maximum voltage 830 kV is generated, forming transient axial or radial electrical field. Different pulse waveforms and field distributions make up six experimental configurations in all. Based on this apparatus, preliminary experiments on vacuum surface flashover switch with different flashover dielectric materials have been conducted in the axial field unit, and nanosecond pulse is generated in the radial field unit which makes a pulse transmission line in the experiment. Basic work parameters of this kind of switch such as lifetime, breakdown voltage are obtained.

Characteristics of edge breakdowns on Teflon samples

NASA Technical Reports Server (NTRS)

Yadlowsky, E. J.; Hazelton, R. C.; Churchill, R. J.

1980-01-01

The characteristics of electrical discharges induced on silverbacked Teflon samples irradiated by a monoenergetic electron beam have been studied under controlled laboratory conditions. Measurements of breakdown threshold voltages indicate a marked anisotropy in the electrical breakdown properties of Teflon: differences of up to 10 kV in breakdown threshold voltage are observed depending on the sample orientation. The material anisotropy can be utilized in spacecraft construction to reduce the magnitude of discharge currents.

Current collection by high voltage anodes in near ionospheric conditions

NASA Technical Reports Server (NTRS)

Antoniades, John A.; Greaves, Rod G.; Boyd, D. A.; Ellis, R.

1990-01-01

The authors experimentally identified three distinct regimes with large differences in current collection in the presence of neutrals and weak magnetic fields. In magnetic field/anode voltage space the three regions are separated by very sharp transition boundaries. The authors performed a series of laboratory experiments to study the dependence of the region boundaries on several parameters, such as the ambient neutral density, plasma density, magnetic field strength, applied anode voltage, voltage pulsewidth, chamber material, chamber size and anode radius. The three observed regimes are: classical magnetic field limited collection; stable medium current toroidal discharge; and large scale, high current space glow discharge. There is as much as several orders of magnitude of difference in the amount of collected current upon any boundary crossing, particularly if one enters the space glow regime. They measured some of the properties of the plasma generated by the breakdown that is present in regimes II and III in the vicinity of the anode including the sheath modified electrostatic potential, I-V characteristics at high voltage as well as the local plasma density.

Electrical Breakdown in Water Vapor

NASA Astrophysics Data System (ADS)

Škoro, N.; Marić, D.; Malović, G.; Graham, W. G.; Petrović, Z. Lj.

2011-11-01

In this paper investigations of the voltage required to break down water vapor are reported for the region around the Paschen minimum and to the left of it. In spite of numerous applications of discharges in biomedicine, and recent studies of discharges in water and vapor bubbles and discharges with liquid water electrodes, studies of the basic parameters of breakdown are lacking. Paschen curves have been measured by recording voltages and currents in the low-current Townsend regime and extrapolating them to zero current. The minimum electrical breakdown voltage for water vapor was found to be 480 V at a pressure times electrode distance (pd) value of around 0.6 Torr cm (˜0.8 Pa m). The present measurements are also interpreted using (and add additional insight into) the developing understanding of relevant atomic and particularly surface processes associated with electrical breakdown.

Electrokinetic ion breakdown in a nanochannel

NASA Astrophysics Data System (ADS)

Wang, Jun-yao; Xu, Zheng

2016-07-01

In this paper, the electrokinetic ion breakdown in a nanochannel is investigated. The Poisson-Nernst-Planck equations are employed to simulate the influence of the voltage on the concentration. Both theoretical research and experiments show that increasing the voltage can promote the ion concentration, but high voltage will break up the repulsion effect of the electric double layer and bring the concentration down. For a given micro-nanochannel, the ion concentration has a peak value corresponding with a peak voltage. Narrowing the width of a nanochannel improves the peak voltage and the peak concentration. The results will be beneficial to research the internal discipline of electrokinetic concentration.

Breakdown phenomena in radio-frequency helium microdischarges

NASA Astrophysics Data System (ADS)

Radmilovic-Radjenovic, M.; Radjenovic, B.; Nina, A.

2008-07-01

In this paper, the Kihara equation has been applied in order to determine the breakdown voltage in helium rf microdischarges. It was found that the Kihara equation, with modified moleculer constants, describes the breakdown process well even for gaps of the order of a few millimeters. A good agreement between numerical solutions of the Kihara equation and the available experimental data reveals that the breakdown voltages depend on the pd product and vary substantially with changes in rf frequencies.

Ultrastable Natural Ester-Based Nanofluids for High Voltage Insulation Applications.

PubMed

Peppas, Georgios D; Bakandritsos, Aristides; Charalampakos, Vasilis P; Pyrgioti, Eleftheria C; Tucek, Jiri; Zboril, Radek; Gonos, Ioannis F

2016-09-28

Nanofluids for high voltage insulation systems have emerged as a potential substitute for liquid dielectrics in industrial applications. Nevertheless, the sedimentation of nanoparticles has been so far a serious barrier for their wide and effective exploitation. The present work reports on the development and in-depth characterization of colloidally ultrastable natural ester oil insulation systems containing iron oxide nanocrystals which lift the problem of sedimentation and phase separation. Compared to state-of-the-art systems, the final product is endowed with increased dielectric strength, faster thermal response, lower dielectric losses (decreased dissipation factor: tan δ), and very high endurance during discharge stressing. The developed nanofluid was studied and compared with a similar system containing commercial iron oxide nanoparticles, the latter demonstrating extensive sedimentation. Herein, the dielectric properties of the nanofluids are analyzed at various concentrations by means of breakdown voltage and dissipation factor measurements. The characterization techniques unequivocally demonstrate the high performance reliability of the reported nanofluid, which constitutes a significant breakthrough in the field of high voltage insulation technologies.

Influence of ultrasound on the electrical breakdown of transformer oil

NASA Astrophysics Data System (ADS)

Isakaev, E. Kh; Tyuftyaev, A. S.; Gadzhiev, M. Kh; Demirov, N. A.; Akimov, P. L.

2018-01-01

When the transformer oil is exposed to low power ultrasonic waves (< 2 W/cm2) at initial moment the breakdown voltage of transformer oil is reduced relative to the breakdown voltage of pure oil due to degassing and the occurrence of cavitation bubbles. With the increase of sonication time the breakdown voltage also increases, nonlinearly. The experimental data indicate the possibility of using ultrasonic waves of low power for degassing of transformer oil.

Generation of runaway electrons and X-ray emission during breakdown of atmospheric-pressure air by voltage pulses with an ∼0.5-μs front duration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kostyrya, I. D.; Tarasenko, V. F., E-mail: VFT@loi.hcei.tsc.ru

2015-03-15

Results are presented from experiments on the generation of runaway electron beams and X-ray emission in atmospheric-pressure air by using voltage pulses with an ∼0.5-μs front duration. It is shown that the use of small-curvature-radius spherical cathodes (or other cathodes with small curvature radii) decreases the intensity of the runaway electron beam and X-ray emission. It is found that, at sufficiently high voltages at the electrode gap (U{sub m} ∼ 100 kV), the gap breakdown, the formation of a spark channel, and the generation of a runaway electron beam occur over less than 10 ns. At high values of U{submore » m} behind the anode that were reached by increasing the cathode size and the electrode gap length, a supershort avalanche electron beam with a full width at half-maximum (FWHM) of up to ∼100 ps was detected. At voltages of ∼50 kV, the second breakdown regime was revealed in which a runaway electron beam with an FWHM of ∼2 ns was generated, whereas the FWHM of the X-ray pulse increased to ∼100 ns. It is established that the energy of the bulk of runaway electrons decreases with increasing voltage front duration and is ⩽30 keV in the first regime and ⩽10 keV in the second regime.« less

Non-intrusive high voltage measurement using slab coupled optical sensors

NASA Astrophysics Data System (ADS)

Stan, Nikola; Chadderdon, Spencer; Selfridge, Richard H.; Schultz, Stephen M.

2014-03-01

We present an optical fiber non-intrusive sensor for measuring high voltage transients. The sensor converts the unknown voltage to electric field, which is then measured using slab-coupled optical fiber sensor (SCOS). Since everything in the sensor except the electrodes is made of dielectric materials and due to the small field sensor size, the sensor is minimally perturbing to the measured voltage. We present the details of the sensor design, which eliminates arcing and minimizes local dielectric breakdown using Teflon blocks and insulation of the whole structure with transformer oil. The structure has a capacitance of less than 3pF and resistance greater than 10 GΩ. We show the measurement of 66.5 kV pulse with a 32.6μs time constant. The measurement matches the expected value of 67.8 kV with less than 2% error.

Breakdown Conditioning Chacteristics of Precision-Surface-Treatment-Electrode in Vacuum

NASA Astrophysics Data System (ADS)

Kato, Kastumi; Fukuoka, Yuji; Inagawa, Yukihiko; Saitoh, Hitoshi; Sakaki, Masayuki; Okubo, Hitoshi

Breakdown (BD) characteristics in vacuum are strongly dependent on the electrode surface condition, like the surface roughness etc. Therefore, in order to develop a high voltage vacuum circuit breaker, it is important to optimize the surface treatment process. This paper discusses about the effect of precision-surface-treatment of the electrode on breakdown conditioning characteristics under non-uniform electric field in vacuum. Experimental results reveal that the electrode surface treatment affects the conditioning process, especially the BD voltage and the BD field strength at the initial stage of the conditioning.

The development of high-voltage repetitive low-jitter corona stabilized triggered switch

NASA Astrophysics Data System (ADS)

Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

2018-04-01

The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF6/N2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF6/N2 mixture ratio on switch performance was explored. The experimental results show that when the SF6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

The development of high-voltage repetitive low-jitter corona stabilized triggered switch.

PubMed

Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

2018-04-01

The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF 6 /N 2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF 6 /N 2 mixture ratio on switch performance was explored. The experimental results show that when the SF 6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

Discussion of Electrode Conditioning Mechanism Based on Pre-breakdown Current under Non-uniform Electric Field in Vacuum

NASA Astrophysics Data System (ADS)

Yasuoka, Takanori; Kato, Tomohiro; Kato, Katsumi; Okubo, Hitoshi

Electrode conditioning is very important technique for improvement of the insulation performance of vacuum circuit breakers (VCBs). This paper discusses the spark conditioning mechanism under non-uniform electric field focused on the pre-breakdown current. We quantitatively evaluated the spark conditioning effect by analyzing the pre-breakdown current based on Fowler-Nordheim equation. As a result, field enhancement factor β decreased with the increasing in breakdown voltage in the beginning of conditioning process, and finally β was saturated with the saturation of breakdown voltage. In addition, in case of non-uniform field, we found that β on high voltage rod electrode after conditioning varied according to the electric field strength on the rod electrode.

High Voltage Power Supply Design Guide for Space

NASA Technical Reports Server (NTRS)

Bever, Renate S.; Ruitberg, Arthur P.; Kellenbenz, Carl W.; Irish, Sandra M.

2006-01-01

This book is written for newcomers to the topic of high voltage (HV) in space and is intended to replace an earlier (1970s) out-of-print document. It discusses the designs, problems, and their solutions for HV, mostly direct current, electric power, or bias supplies that are needed for space scientific instruments and devices, including stepping supplies. Output voltages up to 30kV are considered, but only very low output currents, on the order of microamperes. The book gives a brief review of the basic physics of electrical insulation and breakdown problems, especially in gases. It recites details about embedment and coating of the supplies with polymeric resins. Suggestions on HV circuit parts follow. Corona or partial discharge testing on the HV parts and assemblies is discussed both under AC and DC impressed test voltages. Electric field analysis by computer on an HV device is included in considerable detail. Finally, there are many examples given of HV power supplies, complete with some of the circuit diagrams and color photographs of the layouts.

Transport phenomena in polymer electrolyte membrane fuel cells via voltage loss breakdown

NASA Astrophysics Data System (ADS)

Flick, Sarah; Dhanushkodi, Shankar R.; Mérida, Walter

2015-04-01

This study presents a voltage loss breakdown method based on in-situ experimental data to systematically analyze the different overpotentials of a polymer electrolyte membrane fuel cell. This study includes a systematic breakdown of the anodic overpotentials via the use of a reference electrode system. This work demonstrates the de-convolution of the individual overpotentials for both anode and cathode side, including the distinction between mass-transport overpotentials in cathode porous transport layer (PTL) and electrode, based on in-situ polarization tests under different operating conditions. This method is used to study the relationship between mass-transport losses inside the cathode catalyst layer (CL) and the PTL for both a single layer and two-layer PTL configuration. We conclude that the micro-porous layer (MPL) significantly improves the water removal within the cell, especially inside the cathode electrode, and therefore the mass transport within the cathode CL. This study supports the theory that the MPL on the cathode leads to an increase in water permeation from cathode to anode due to its function as a capillary barrier. This is reflected in increased anodic mass-transport overpotential, decreased ohmic losses and decreased cathode mass-transport losses, especially in the cathode electrode.

Pre-breakdown phenomena and discharges in a gas-liquid system

NASA Astrophysics Data System (ADS)

Tereshonok, D. V.; Babaeva, N. Yu; Naidis, G. V.; Panov, V. A.; Smirnov, B. M.; Son, E. E.

2018-04-01

In this paper, we investigate pre-breakdown and breakdown phenomena in gas-liquid systems. Cavitation void formation and breakdown in bubbles immersed in liquids are studied numerically, while complete breakdown of bubbled water is studied in experiments. It is shown that taking into account the dependence of water dielectric constant on electric field strength plays the same important role for cavitation void appearance under the action of electrostriction forces as the voltage rise time. It is also shown that the initial stage of breakdown in deformed bubbles immersed in liquid strongly depends on spatial orientation of the bubbles relative to the external electric field. The effect of immersed microbubbles, distributed in bulk water, on breakdown time and voltage is studied experimentally. At the breakdown voltage, the slow ‘thermal’ mechanism is changed by the fast ‘streamer-leader’ showing a decrease in breakdown time by two orders of magnitude by introducing microbubbles (0.1% of volumetric gas content) into the water. In addition, the plasma channel is found to pass between nearby microbubbles, exhibiting some ‘guidance’ effect.

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

NASA Technical Reports Server (NTRS)

Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

2011-01-01

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

DOE PAGES

Vizkelethy, G.; King, M. P.; Aktas, O.; ...

2016-12-02

Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vizkelethy, G.; King, M. P.; Aktas, O.

Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

Electric properties and carrier multiplication in breakdown sites in multi-crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schneemann, Matthias; Carius, Reinhard; Rau, Uwe

2015-05-28

This paper studies the effective electrical size and carrier multiplication of breakdown sites in multi-crystalline silicon solar cells. The local series resistance limits the current of each breakdown site and is thereby linearizing the current-voltage characteristic. This fact allows the estimation of the effective electrical diameters to be as low as 100 nm. Using a laser beam induced current (LBIC) measurement with a high spatial resolution, we find carrier multiplication factors on the order of 30 (Zener-type breakdown) and 100 (avalanche breakdown) as new lower limits. Hence, we prove that also the so-called Zener-type breakdown is followed by avalanche multiplication. Wemore » explain that previous measurements of the carrier multiplication using thermography yield results higher than unity, only if the spatial defect density is high enough, and the illumination intensity is lower than what was used for the LBIC method. The individual series resistances of the breakdown sites limit the current through these breakdown sites. Therefore, the measured multiplication factors depend on the applied voltage as well as on the injected photocurrent. Both dependencies are successfully simulated using a series-resistance-limited diode model.« less

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erofeev, E. V., E-mail: erofeev@micran.ru; Fedin, I. V.; Kutkov, I. V.

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping levelmore » makes it possible to attain a threshold voltage of GaN transistors close to V{sub th} = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V{sub th} = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.« less

DC-driven plasma gun: self-oscillatory operation mode of atmospheric-pressure helium plasma jet comprised of repetitive streamer breakdowns

NASA Astrophysics Data System (ADS)

Wang, Xingxing; Shashurin, Alexey

2017-02-01

This paper presents and studies helium atmospheric pressure plasma jet comprised of a series of repetitive streamer breakdowns, which is driven by pure DC high voltage (self-oscillatory behavior). The repetition frequency of the breakdowns is governed by the geometry of discharge electrodes/surroundings and gas flow rate. Each next streamer is initiated when the electric field on the anode tip recovers after the previous breakdown and reaches the breakdown threshold value of about 2.5 kV cm-1. One type of the helium plasma gun designed using this operational principle is demonstrated. The gun operates on about 3 kV DC high voltage and is comprised of the series of the repetitive streamer breakdowns at a frequency of about 13 kHz.

Electrical breakdown detection system for dielectric elastomer actuators

NASA Astrophysics Data System (ADS)

Ghilardi, Michele; Busfield, James J. C.; Carpi, Federico

2017-04-01

Electrical breakdown of dielectric elastomer actuators (DEAs) is an issue that has to be carefully addressed when designing systems based on this novel technology. Indeed, in some systems electrical breakdown might have serious consequences, not only in terms of interruption of the desired function but also in terms of safety of the overall system (e.g. overheating and even burning). The risk for electrical breakdown often cannot be completely avoided by simply reducing the driving voltages, either because completely safe voltages might not generate sufficient actuation or because internal or external factors might change some properties of the actuator whilst in operation (for example the aging or fatigue of the material, or an externally imposed deformation decreasing the distance between the compliant electrodes). So, there is the clear need for reliable, simple and cost-effective detection systems that are able to acknowledge the occurrence of a breakdown event, making DEA-based devices able to monitor their status and become safer and "selfaware". Here a simple solution for a portable detection system is reported that is based on a voltage-divider configuration that detects the voltage drop at the DEA terminals and assesses the occurrence of breakdown via a microcontroller (Beaglebone Black single-board computer) combined with a real-time, ultra-low-latency processing unit (Bela cape an open-source embedded platform developed at Queen Mary University of London). The system was used to both generate the control signal that drives the actuator and constantly monitor the functionality of the actuator, detecting any breakdown event and discontinuing the supplied voltage accordingly, so as to obtain a safer controlled actuation. This paper presents preliminary tests of the detection system in different scenarios in order to assess its reliability.

Scaling laws for AC gas breakdown and implications for universality

NASA Astrophysics Data System (ADS)

Loveless, Amanda M.; Garner, Allen L.

2017-10-01

The reduced dependence on secondary electron emission and electrode surface properties makes radiofrequency (RF) and microwave (MW) plasmas advantageous over direct current (DC) plasmas for various applications, such as microthrusters. Theoretical models relating molecular constants to alternating current (AC) breakdown often fail due to incomplete understanding of both the constants and the mechanisms involved. This work derives simple analytic expressions for RF and MW breakdown, demonstrating the transition between these regimes at their high and low frequency limits, respectively. We further show that the limiting expressions for DC, RF, and MW breakdown voltage all have the same universal scaling dependence on pressure and gap distance at high pressure, agreeing with experiment.

Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices.

PubMed

Pejović, Milić M; Denić, Dragan B; Pejović, Momčilo M; Nešić, Nikola T; Vasović, Nikola

2010-10-01

This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain <10 MV/m at the desired operating voltage aiming at little or no field emission once conditioned. Typical electrode surface preparation involves diamond-paste polishing by skilled personnel, requiring several weeks of effort per electrode. In this work, we describe a centrifugal barrel-polishing techniquemore » commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (~11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Here, tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.« less

High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

DOE PAGES

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.; ...

2017-09-11

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain <10 MV/m at the desired operating voltage aiming at little or no field emission once conditioned. Typical electrode surface preparation involves diamond-paste polishing by skilled personnel, requiring several weeks of effort per electrode. In this work, we describe a centrifugal barrel-polishing techniquemore » commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (~11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Here, tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.« less

High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

NASA Astrophysics Data System (ADS)

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.; Wang, Y.; Poelker, M.

2017-09-01

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain <10 MV/m at the desired operating voltage aiming at little or no field emission once conditioned. Typical electrode surface preparation involves diamond-paste polishing by skilled personnel, requiring several weeks of effort per electrode. In this work, we describe a centrifugal barrel-polishing technique commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (˜11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.

Synthesis Mechanism of Low-Voltage Praseodymium Oxide Doped Zinc Oxide Varistor Ceramics Prepared Through Modified Citrate Gel Coating

PubMed Central

Abdullah, Wan Rafizah Wan; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2012-01-01

High demands on low-voltage electronics have increased the need for zinc oxide (ZnO) varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr6O11) based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr6O11 addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr6O11 from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr6O11 content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary. PMID:22606043

Synthesis mechanism of low-voltage praseodymium oxide doped zinc oxide varistor ceramics prepared through modified citrate gel coating.

PubMed

Abdullah, Wan Rafizah Wan; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2012-01-01

High demands on low-voltage electronics have increased the need for zinc oxide (ZnO) varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr(6)O(11)) based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr(6)O(11) addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr(6)O(11) from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr(6)O(11) content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary.

High Voltage Tests in the LUX-ZEPLIN System Test

NASA Astrophysics Data System (ADS)

Whitis, Thomas; Lux-Zeplin Collaboration

2016-03-01

The LUX-ZEPLIN (LZ) project is a dark matter direct detection experiment using liquid xenon. The detector is a time projection chamber (TPC) requiring the establishment of a large electric field inside of the detector in order to drift ionization electrons. Historically, many xenon TPC designs have been unable to reach their design fields due to light production and breakdown. The LZ System Test is scaled so that with a cathode voltage of -50 kV, it will have the fields that will be seen in the LZ detector at -100 kV. It will use a fully instrumented but scaled-down version of the LZ TPC design with a vessel set and gas system designed for quick turnaround, allowing for iterative modifications to the TPC prototype and instrumentation. This talk will present results from the high voltage tests performed during the first runs of the LZ System Test.

Disintegration of rocks based on magnetically isolated high voltage discharge

NASA Astrophysics Data System (ADS)

He, Mengbing; Jiang, Jinbo; Huang, Guoliang; Liu, Jun; Li, Chengzu

2013-02-01

Recently, a method utilizing pulsed power technology for disintegration of rocks arouses great interest of many researchers. In this paper, an improved method based on magnetic switch and the results shown that the uniform dielectrics like plastic can be broken down in water is presented, and the feasible mechanism explaining the breakdown of solid is proposed and proved experimentally. A high voltage pulse of 120 kV, rise time 0.2 μs was used to ignite the discharging channel in solids. When the plasma channel is formed in the solid, the resistance of the channel is quiet small; even if a relatively low voltage is applied on the channel on this occasion, it will produce high current to heat the plasma channel rapidly, and eventually disintegrate the solids. The feasibility of promising industrial application in the drilling and demolition of natural and artificial solid materials by the method we presented is verified by the experiment result in the paper.

Disintegration of rocks based on magnetically isolated high voltage discharge.

PubMed

He, Mengbing; Jiang, Jinbo; Huang, Guoliang; Liu, Jun; Li, Chengzu

2013-02-01

Recently, a method utilizing pulsed power technology for disintegration of rocks arouses great interest of many researchers. In this paper, an improved method based on magnetic switch and the results shown that the uniform dielectrics like plastic can be broken down in water is presented, and the feasible mechanism explaining the breakdown of solid is proposed and proved experimentally. A high voltage pulse of 120 kV, rise time 0.2 μs was used to ignite the discharging channel in solids. When the plasma channel is formed in the solid, the resistance of the channel is quiet small; even if a relatively low voltage is applied on the channel on this occasion, it will produce high current to heat the plasma channel rapidly, and eventually disintegrate the solids. The feasibility of promising industrial application in the drilling and demolition of natural and artificial solid materials by the method we presented is verified by the experiment result in the paper.

NASCAP modelling of high-voltage power system interactions with space charged-particle environments

NASA Technical Reports Server (NTRS)

Stevens, N. J.; Roche, J. C.; Mandell, M. J.

1979-01-01

A simple space power system operating in geosynchronous orbit was analyzed. This system consisted of two solar array wings and a central body. Each solar array wing was considered to be divided into three regions operating at 2000 volts. The center body was considered to be an electrical ground with the array voltages both positive and negative relative to ground. The system was analyzed for both a normal environment and a moderate geomagnetic substorm environment. Initial results indicate a high probability of arcing at the interconnects on the negative operating voltage wing. The dielectric strength of the substrate may be exceeded giving rise to breakdown in the bulk of the material. The geomagnetic substorm did not seem to increase the electrical gradients at the interconnects on the negative operating voltage wing but did increase the gradients on the positive operating voltage wing which could result in increased coupling current losses.

The experimental study of the DC dielectric breakdown strength in magnetic fluids

NASA Astrophysics Data System (ADS)

Kopčanský, P.; Tomčo, L.; Marton, K.; Koneracká, M.; Potočová, I.; Timko, M.

2004-05-01

Magnetic fluids have been studied for use as a high-voltage insulation. High-voltage measurements on magnetic fluids based on transformer oil, as a function of volume concentrations of magnetite particles and applied magnetic field, showed the increase of the DC dielectric breakdown strength opposite transformer oil, if the saturation magnetization of magnetic fluid is up to 4 mT approximately.

Breakdown in Atmospheric Pressure Plasma Jets: Nearby Grounds and Voltage Rise Time

NASA Astrophysics Data System (ADS)

Lietz, Amanda; Kushner, Mark J.

2015-09-01

Atmospheric pressure plasma jets (APPJs) are being investigated to stimulate therapeutic responses in biological systems. These responses are not always consistent. One source of variability may be the design of the APPJs - the number and placement of electrodes, pulse power format - which affects the production of reactive species. In this study, the consequences of design parameters of an APPJ were computationally investigated using nonPDPSIM, a 2 d model. The configuration is a cylindrical tube with one or two ring exterior electrodes, with or without a center pin electrode. The APPJ operates in He/O2 flowing into humid air. We found that the placement of the electrical ground on and around the system is important to the breakdown characteristics of the APPJ, and the electron density and temperature of the resulting plasma. With a single powered ring electrode, the placement of the nearest ground may vary depending on the setup, and this significantly affects the discharge. With two-ring electrodes, the nearest ground plane is well defined, however more distant ground planes can also influence the discharge. With an ionization wave (IW) that propagates out of the tube and into the plume in tens of ns, the rise time of the voltage waveform can be on the same timescale, and so variations in the voltage rise time could produce different IW properties. The effect of ground placement and voltage waveform on IW formation (ns timescales) and production of reactive neutrals (ms timescales) will be discussed. Work supported by DOE (DE-SC0001319) and NSF (CHE-1124724). Done...processed 598 records...15:12:56

Study of a High Voltage Ion Engine Power Supply

NASA Technical Reports Server (NTRS)

Stuart, Thomas A.; King, Roger J.; Mayer, Eric

1996-01-01

A complete laboratory breadboard version of a ion engine power converter was built and tested. This prototype operated on a line voltage of 80-120 Vdc, and provided output ratings of 1100 V at 1.8 kW, and 250 V at 20 mA. The high-voltage (HV) output voltage rating was revised from the original value of 1350 V at the beginning of the project. The LV output was designed to hold up during a 1-A surge current lasting up to 1 second. The prototype power converter included a internal housekeeping power supply which also operated from the line input. The power consumed in housekeeping was included in the overall energy budget presented for the ion engine converter. HV and LV output voltage setpoints were commanded through potentiometers. The HV converter itself reached its highest power efficiency of slightly over 93% at low line and maximum output. This would dip below 90% at high line. The no-load (rated output voltages, zero load current) power consumption of the entire system was less than 13 W. A careful loss breakdown shows that converter losses are predominately Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) conduction losses and HV rectifier snubbing losses, with the rectifier snubbing losses becoming predominant at high line. This suggests that further improvements in power efficiency could best be obtained by either developing a rectifier that was adequately protected against voltage overshoot with less snubbing, or by developing a pre-regulator to reduced the range of line voltage on the converter. The transient testing showed the converter to be fully protected against load faults, including a direct short-circuit from the HV output to the LV output terminals. Two currents sensors were used: one to directly detect any core ratcheting on the output transformer and re-initiate a soft start, and the other to directly detect a load fault and quickly shut down the converter for load protection. The finished converter has been extensively fault tested

High power thyristors with 5 kV blocking voltage. Volume 1: Development of high-voltage-thyristors (4.5 kV) with good dynamic properties

NASA Technical Reports Server (NTRS)

Lock, K.; Patalong, H.; Platzoeder, K.

1979-01-01

Using neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.

On the difference between breakdown and quench voltages of argon plasma and its relation to 4p–4s atomic state transitions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forati, Ebrahim, E-mail: forati@ieee.org; Piltan, Shiva; Sievenpiper, Dan, E-mail: dsievenpiper@ucsd.edu

Using a relaxation oscillator circuit, breakdown (V{sub BD}) and quench (V{sub Q}) voltages of a DC discharge microplasma between two needle probes are measured. High resolution modified Paschen curves are obtained for argon microplasmas including a quench voltage curve representing the voltage at which the plasma turns off. It is shown that for a point to point microgap (e.g., the microgap between two needle probes) which describes many realistic microdevices, neither Paschen's law applies nor field emission is noticeable. Although normally V{sub BD} > V{sub Q,} it is observed that depending on environmental parameters of argon, such as pressure and the drivingmore » circuitry, plasma can exist in a different state with equal V{sub BD} and V{sub Q.} Using emission line spectroscopy, it is shown that V{sub BD} and V{sub Q} are equal if the atomic excitation by the electric field dipole moment dominantly leads to one of the argon's metastable states (4P{sub 5} in our study)« less

Plasma breakdown in a capacitively-coupled radiofrequency argon discharge

NASA Astrophysics Data System (ADS)

Smith, H. B.; Charles, C.; Boswell, R. W.

1998-10-01

Low pressure, capacitively-coupled rf discharges are widely used in research and commercial ventures. Understanding of the non-equilibrium processes which occur in these discharges during breakdown is of interest, both for industrial applications and for a deeper understanding of fundamental plasma behaviour. The voltage required to breakdown the discharge V_brk has long been known to be a strong function of the product of the neutral gas pressure and the electrode seperation (pd). This paper investigates the dependence of V_brk on pd in rf systems using experimental, computational and analytic techniques. Experimental measurements of V_brk are made for pressures in the range 1 -- 500 mTorr and electrode separations of 2 -- 20 cm. A Paschen-style curve for breakdown in rf systems is developed which has the minimum breakdown voltage at a much smaller pd value, and breakdown voltages which are significantly lower overall, than for Paschen curves obtained from dc discharges. The differences between the two systems are explained using a simple analytic model. A Particle-in-Cell simulation is used to investigate a similar pd range and examine the effect of the secondary emission coefficient on the rf breakdown curve, particularly at low pd values. Analytic curves are fitted to both experimental and simulation results.

Understanding and Prevention of Transient Voltages and Dielectric Breakdown in High Voltage Battery Systems

DTIC Science & Technology

2017-07-31

as it is one faced every day as power systems engineers try to integrate batteries, solar panels, and wind turbines onto the already existing...Amendment-OOO l.ashx. [Accessed 10 Dec 2013] (7) "Copper Wire Resistance and Inductance Calculator", Ampbooks.com, 20 I 7. [Online]. Available: https...ampbooks.com/home/amplifier-calcu lators/ wire -inductance/. [Accessed: 21- May- 2017). (8) "What is Transient Voltage? - E lectronic Products

Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pejovic, Milic M.; Denic, Dragan B.; Pejovic, Momcilo M.

2010-10-15

This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven bymore » TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.« less

CO2-Tea pulse clipping using pulsed high voltage preionization for high spatial resolution I.R. Lidar systems

NASA Astrophysics Data System (ADS)

Gasmi, Taieb

2018-04-01

An extra-cavity CO2-TEA laser pulse clipper for high spatial resolution atmospheric monitoring is presented. The clipper uses pulsed high voltageto facilitate the breakdown of the gas within the clipper cell. Complete extinction of the nitrogen tail, that degrades the range resolution of LIDARS, is obtained at pressures from 375 up to 1500 Torr for nitrogen and argon gases whereas an attenuation coefficient of almost 102 is achieved for helium. Excellent energy stability and pulse width repeatability were achieved using high voltage pre-ionized gas technique.

Breakdown between bare electrodes with an oil-paper interface

NASA Astrophysics Data System (ADS)

Kelley, E. F.; Hebner, R. E., Jr.

1980-06-01

Measurements of the location of electrical breakdown in a composite insulating system were made. For these measurements a paper sample was mounted so that it connected the two electrodes. Electrode structures ranging from plane-plane to sphere-sphere were used. The electrode paper system was tested in oil in an attempt to determine the properties of an oil paper interface. The data indicated that in a carefully prepared system the breakdown will not necessarily occur at the interface. In addition, it was found that the breakdown voltages were not significantly lower for those breakdowns which occurred at the interface than for those which did not. It was noted that if the paper interface was not dried or if many gaseous voids were left in or on the paper, the breakdown will regularly occur at the interface and at a lower voltage.

Mechanism of formation of subnanosecond current front in high-voltage pulse open discharge

NASA Astrophysics Data System (ADS)

Schweigert, I. V.; Alexandrov, A. L.; Zakrevsky, Dm. E.; Bokhan, P. A.

2014-11-01

The mechanism of subnanosecond current front rise observed previously in the experiment in high-voltage pulse open discharge in helium is studied in kinetic particle-in-cell simulations. The Boltzmann equations for electrons, ions, and fast atoms are solved self-consistently with the Poisson equations for the electrical potential. The partial contributions to the secondary electron emission from the ions, fast atoms, photons, and electrons, bombarding the electrode, are calculated. In simulations, as in the experiment, the discharge glows between two symmetrical cathodes and the anode grid in the midplane at P =6 Torr and the applied voltage of 20 kV. The electron avalanche development is considered for two experimental situations during the last stage of breakdown: (i) with constant voltage and (ii) with decreasing voltage. For case (i), the subnanosecond current front rise is set by photons from the collisional excitation transfer reactions. For the case (ii), the energetic electrons swamp the cathode during voltage drop and provide the secondary electron emission for the subnanosecond current rise, observed in the experiment.

Electric field and space charge distribution measurement in transformer oil struck by impulsive high voltage

NASA Astrophysics Data System (ADS)

Sima, Wenxia; Guo, Hongda; Yang, Qing; Song, He; Yang, Ming; Yu, Fei

2015-08-01

Transformer oil is widely used in power systems because of its excellent insulation properties. The accurate measurement of electric field and space charge distribution in transformer oil under high voltage impulse has important theoretical and practical significance, but still remains challenging to date because of its low Kerr constant. In this study, the continuous electric field and space charge distribution over time between parallel-plate electrodes in high-voltage pulsed transformer oil based on the Kerr effect is directly measured using a linear array photoelectrical detector. Experimental results demonstrate the applicability and reliability of this method. This study provides a feasible approach to further study the space charge effects and breakdown mechanisms in transformer oil.

Positive and negative effects of dielectric breakdown in transformer oil based magnetic fluids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jong-Chul, E-mail: jclee01@gwnu.ac.kr; Lee, Won-Ho; Lee, Se-Hee

The transformer oil based magnetic fluids can be considered as the next-generation insulation fluids because they offer exciting new possibilities to enhance dielectric breakdown voltage as well as heat transfer performance compared to pure transformer oils. In this study, we have investigated the dielectric breakdown strength of the fluids with the various volume concentrations of nanoparticles in accordance with IEC 156 standard and have tried to find the reason for changing the dielectric breakdown voltage of the fluids from the magnetic field analysis. It was found that the dielectric breakdown voltage of pure transformer oil is around 12 kV withmore » the gap distance of 1.5 mm. In the case of our transformer oil-based magnetic fluids with 0.08% < Φ < 0.6% (Φ means the volume concentration of magnetic nanoparticles), the dielectric breakdown voltage shows above 40 kV, which is 3.3 times higher positively than that of pure transformer oil. Negatively in the case when the volume concentration of magnetic nanoparticles is above 0.65%, the dielectric breakdown voltage decreases reversely. From the magnetic field analysis, the reason might be considered as two situations: the positive is for the conductive nanoparticles dispersed well near the electrodes, which play an important role in converting fast electrons to slow negatively charged particles, and the negative is for the agglomeration of the particles near the electrodes, which leads to the breakdown initiation.« less

Reliability of High-Voltage Tantalum Capacitors. Parts 3 and 4)

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2010-01-01

Weibull grading test is a powerful technique that allows selection and reliability rating of solid tantalum capacitors for military and space applications. However, inaccuracies in the existing method and non-adequate acceleration factors can result in significant, up to three orders of magnitude, errors in the calculated failure rate of capacitors. This paper analyzes deficiencies of the existing technique and recommends more accurate method of calculations. A physical model presenting failures of tantalum capacitors as time-dependent-dielectric-breakdown is used to determine voltage and temperature acceleration factors and select adequate Weibull grading test conditions. This model is verified by highly accelerated life testing (HALT) at different temperature and voltage conditions for three types of solid chip tantalum capacitors. It is shown that parameters of the model and acceleration factors can be calculated using a general log-linear relationship for the characteristic life with two stress levels.

A 700 V narrow channel nJFET with low pinch-off voltage and suppressed drain-induced barrier lowering effect

NASA Astrophysics Data System (ADS)

Mao, Kun; Qiao, Ming; Zhang, WenTong; Zhang, Bo; Li, Zhaoji

2014-11-01

This paper proposes a 700 V narrow channel region triple-RESURF (reduced surface field) n-type junction field-effect transistor (NCT-nJFET). Compared to traditional structures, low pinch-off voltage (VP) with unobvious drain-induced barrier lowering (DIBL) effect and large saturated current (IDsat) are achieved. This is because p-type buried layer (Pbury) and PWELL are introduced to shape narrow n-type channel in JFET channel region. DIBL sensitivity (SDIBL) is firstly introduced in this paper to analyze the DIBL effect of high-voltage long-channel JFET. Ultra-high breakdown voltage is obtained by triple RESURF technology. Experimental results show that proposed NCT-nJFET achieves 24-V VP, 3.5% SDIBL, 2.3-mA IDsat, 800-V OFF-state breakdown voltage (OFF-BV) and 650-V ON-state breakdown voltage when VGS equals 0 V (ON-BV).

Surface dynamics of amorphous polymers used for high-voltage insulators.

PubMed

Shemella, Philip T; Laino, Teodoro; Fritz, Oliver; Curioni, Alessandro

2011-11-24

Amorphous siloxane polymers are the backbone of high-voltage insulation materials. The natural hydrophobicity of their surface is a necessary property for avoiding leakage currents and dielectric breakdown. As these surfaces are exposed to the environment, electrical discharges or strong mechanical impact can temporarily destroy their water-repellent properties. After such events, however, a self-healing process sets in and restores the original hydrophobicity within some hours. In the present study, we investigate possible mechanisms of this restoration process. Using large-scale, all-atom molecular dynamics simulations, we show that molecules on the material surface have augmented motion that allows them to rearrange with a net polarization. The overall surface region has a net orientation that contributes to hydrophobicity, and charged groups that are placed at the surface migrate inward, away from the vacuum interface and into the bulk-like region. Our simulations provide insight into the mechanisms for hydrophobic self-recovery that repair material strength and functionality and suggest material compositions for future high-voltage insulators. © 2011 American Chemical Society

A voltage-division-type low-jitter self-triggered repetition-rate switch.

PubMed

Su, Jian-Cang; Zeng, Bo; Gao, Peng-Cheng; Li, Rui; Wu, Xiao-Long; Zhao, Liang

2016-10-01

A voltage-division-type (V/N) low-jitter self-triggered multi-stage switch is put forward. It comprises of a triggered corona gap, several quasi-uniform-field gaps, and an inversion inductor. When the corona gap is in the stage of self-breakdown, the multi-stage gaps are triggered and the switch is closed via an over-voltage. This type of V/N switch has the advantage of compact structure since the auxiliary components like the gas-blowing system and the triggered system are eliminated from the whole system. It also has advantages such as low breakdown jitter and high energy efficiency. The dependence of the self-triggered voltage on the over-voltage factor and the switch operating voltage is deduced. A switch of this type is designed and fabricated and experiments to research its characteristics are conducted. The results show that this switch can operate on a voltage of 1 MV at 50 Hz and can generate 1000 successive pulses with a jitter as low as 3% and an energy efficiency as high as 90%. This V/N switch can work under a high repetition rate with a long lifetime.

42GHz ECRH assisted Plasma Breakdown in tokamak SST-1

NASA Astrophysics Data System (ADS)

Shukla, B. K.; Pradhan, S.; Patel, Paresh; Babu, Rajan; Patel, Jatin; Patel, Harshida; Dhorajia, Pragnesh; Tanna, V.; Atrey, P. K.; Manchanda, R.; Gupta, Manoj; Joisa, Shankar; Gupta, C. N.; Danial, Raju; Singh, Prashant; Jha, R.; Bora, D.

2015-03-01

In SST-1, 42GHz ECRH system has been commissioned to carry out breakdown and heating experiments at 0.75T and 1.5T operating toroidal magnetic fields. The 42GHz ECRH system consists of high power microwave source Gyrotron capable to deliver 500kW microwave power for 500ms duration, approximately 20 meter long transmission line and a mirror based launcher. The ECRH power in fundamental O-mode & second harmonic X-mode is launched from low field side (radial port) of the tokamak. At 0.75T operation, approximately 300 kW ECH power is launched in second harmonic X-mode and successful ECRH assisted breakdown is achieved at low loop_voltage ~ 3V. The ECRH power is launched around 45ms prior to loop voltage. The hydrogen pressure in tokamak is maintained ~ 1×10-5mbar and the pre-ionized density is ~ 4×1012/cc. At 1.5T operating toroidal magnetic field, the ECH power is launched in fundamental O-mode. The ECH power at fundamental harmonic is varied from 100 kW to 250 kW and successful breakdown is achieved in all ECRH shots. In fundamental harmonic there is no delay in breakdown while at second harmonic ~ 40ms delay is observed, which is normal in case of second harmonic ECRH assisted breakdown.

High-Voltage, High-Power Gaseous Electronics Switch For Electric Grid Power Conversion

NASA Astrophysics Data System (ADS)

Sommerer, Timothy J.

2014-05-01

We are developing a high-voltage, high-power gas switch for use in low-cost power conversion terminals on the electric power grid. Direct-current (dc) power transmission has many advantages over alternating current (ac) transmission, but at present the high cost of ac-dc power interconversion limits the use of dc. The gas switch we are developing conducts current through a magnetized cold cathode plasma in hydrogen or helium to reach practical current densities > 1 A/cm2. Thermal and sputter damage of the cathode by the incident ion flux is a major technical risk, and is being addressed through use of a ``self-healing'' liquid metal cathode (eg, gallium). Plasma conditions and cathode sputtering loss are estimated by analyzing plasma spectral emission. A particle-in-cell plasma model is used to understand various aspects of switch operation, including the conduction phase (where plasma densities can exceed 1013 cm-3), the switch-open phase (where the high-voltage must be held against gas breakdown on the left side of Paschen's curve), and the switching transitions (especially the opening process, which is initiated by forming an ion-matrix sheath adjacent to a control grid). The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000298.

Low voltage to high voltage level shifter and related methods

NASA Technical Reports Server (NTRS)

Mentze, Erik J. (Inventor); Buck, Kevin M. (Inventor); Hess, Herbert L. (Inventor); Cox, David F. (Inventor)

2006-01-01

A shifter circuit comprises a high and low voltage buffer stages and an output buffer stage. The high voltage buffer stage comprises multiple transistors arranged in a transistor stack having a plurality of intermediate nodes connecting individual transistors along the stack. The transistor stack is connected between a voltage level being shifted to and an input voltage. An inverter of this stage comprises multiple inputs and an output. Inverter inputs are connected to a respective intermediate node of the transistor stack. The low voltage buffer stage has an input connected to the input voltage and an output, and is operably connected to the high voltage buffer stage. The low voltage buffer stage is connected between a voltage level being shifted away from and a lower voltage. The output buffer stage is driven by the outputs of the high voltage buffer stage inverter and the low voltage buffer stage.

Study of DC Circuit Breaker of H2-N2 Mixture Gas for High Voltage

NASA Astrophysics Data System (ADS)

Shiba, Yuji; Morishita, Yukinaga; Kaneko, Shuhei; Okabe, Shigemitsu; Mizoguchi, Hitoshi; Yanabu, Satoru

Global warming caused by CO2 etc. is a field where the concern is very high. Especially, automobile emissions are problem for it. Therefore, the hybrid car is widely development and used recently. Hybrid car used electric power and gasoline. So, the car reduces CO2. Hybrid car has engine and motor. To rotate the motor, hybrid car has battery. This battery is large capacity. Therefore, the relay should interrupt high DC current for the switch of the motor and the engine. So, hybrid car used hydrogen gas filling relay We studied interruption test for the research of a basic characteristic of hydrogen gas. DC current has not current zero point. So, it is necessary to make the current zero by high arc voltage and forcible current zero point. The loss coefficient and arc voltage of hydrogen is high. Therefore, we studied interruption test for used high arc voltage. We studied interruption test and dielectric breakdown test of air, pure Hydrogen, and Hydrogen- nitrogen mixture gas. As a result, we realized H2-N2(80%-20%) is the best gas.

HIGH VOLTAGE GENERATOR

DOEpatents

Zito, G.V.

1959-04-21

This patent relates to high voltage supply circuits adapted for providing operating voltages for GeigerMueller counter tubes, and is especially directed to an arrangement for maintaining uniform voltage under changing conditions of operation. In the usual power supply arrangement for counter tubes the counter voltage is taken from across the power supply output capacitor. If the count rate exceeds the current delivering capaciiy of the capacitor, the capacitor voltage will drop, decreasing the counter voltage. The present invention provides a multivibrator which has its output voltage controlled by a signal proportional to the counting rate. As the counting rate increases beyond the current delivering capacity of the capacitor, the rectified voltage output from the multivibrator is increased to maintain uniform counter voltage.

Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

NASA Astrophysics Data System (ADS)

Cha, Giho; Kim, Youngchul; Jang, Hyungwoo; Kang, Hyunsoon; Song, Changsub

2001-10-01

Silicon direct bonding technique was successfully applied for the fabrication of high voltage IGBT (Insulated Gate Bipolar Transistor). In this work, 5 inch, p-type CZ wafer for handle wafer and n-type FZ wafer for device wafer were used and bonding the two wafers was performed at reduced pressure (1mmTorr) using a modified vacuum bonding machine. Since the breakdown voltage in high voltage device has been determined by the remained thickness of device layer, grinding and CMP steps should be carefully designed in order to acquire better uniformity of device layer. In order to obtain the higher removal rate and the final better uniformity of device layer, the harmony of the two processes must be considered. We found that the concave type of grinding profile and the optimal thickness of ground wafer was able to reduce the process time of CMP step and also to enhance the final thickness uniformity of device layer up to +/- 1%. Finally, when compared epitaxy layer with SDB wafer, the SDB wafer was found to be more favorable in terms of cost and electrical characteristics.

Breakdown dynamics of electrically exploding thin metal wires in vacuum

NASA Astrophysics Data System (ADS)

Sarkisov, G. S.; Caplinger, J.; Parada, F.; Sotnikov, V. I.

2016-10-01

Using a two-frame intensified charge coupled device (iCCD) imaging system with a 2 ns exposure time, we observed the dynamics of voltage breakdown and corona generation in experiments of fast ns-time exploding fine Ni and stainless-steel (SS) wires in a vacuum. These experiments show that corona generation along the wire surface is subjected to temporal-spatial inhomogeneity. For both metal wires, we observed an initial generation of a bright cathode spot before the ionization of the entire wire length. This cathode spot does not expand with time. For 25.4 μm diameter Ni and SS wire explosions with positive polarity, breakdown starts from the ground anode and propagates to the high voltage cathode with speeds approaching 3500 km/s or approximately one percent of light speed.

Breakdown Characteristics and Streaming Electrification Characteristics of Flame Retardant Silicone Oil

NASA Astrophysics Data System (ADS)

Arazoe, Satoshi; Yasuda, Koji; Okabe, Shigemitsu; Ueta, Genyo; Yanabu, Satoru

We have investigated the performance of the silicone oil as alternative oil to the mineral oil that is used as an insulation medium of the oil immersed transformer. There are various methods of evaluating the performance, we especially investigated the breakdown characteristics and the streaming electrification characteristics. In the breakdown characteristics, the insulation performance under the influence of changing the temperature, and the electrode shape was investigated. Moreover, the insulation performance in the composite insulation system that was composed of the insulation oil and the oil immersed insulator was investigated. From these results, we found that in the oil gap model, the breakdown voltage of silicone oil was lower than that of mineral oil by 15%. In contrast, in the composite insulation system, breakdown voltage of combination with silicone oil is higher than that of combination with mineral oil. In the streaming electrification characteristics, the difference of the amount of electrification under the influence of changing the kinds of solid insulators and the temperature was investigated. As a result, we found that silicone oil has the maximum of the amount of electrification at a high temperature compared with mineral oil.

Comparative analysis of breakdown mechanism in thin SiO2 oxide films in metal-oxide-semiconductor structures under the action of heavy charged particles and a pulsed voltage

NASA Astrophysics Data System (ADS)

Zinchenko, V. F.; Lavrent'ev, K. V.; Emel'yanov, V. V.; Vatuev, A. S.

2016-02-01

Regularities in the breakdown of thin SiO2 oxide films in metal-oxide-semiconductors structures of power field-effect transistors under the action of single heavy charged particles and a pulsed voltage are studied experimentally. Using a phenomenological approach, we carry out comparative analysis of physical mechanisms and energy criteria of the SiO2 breakdown in extreme conditions of excitation of the electron subsystem in the subpicosecond time range.

Zero temperature coefficient of resistance of the electrical-breakdown path in ultrathin hafnia

NASA Astrophysics Data System (ADS)

Zhang, H. Z.; Ang, D. S.

2017-09-01

The recent widespread attention on the use of the non-volatile resistance switching property of a microscopic oxide region after electrical breakdown for memory applications has prompted basic interest in the conduction properties of the breakdown region. Here, we report an interesting crossover from a negative to a positive temperature dependence of the resistance of a breakdown region in ultrathin hafnia as the applied voltage is increased. As a consequence, a near-zero temperature coefficient of resistance is obtained at the crossover voltage. The behavior may be modeled by (1) a tunneling-limited transport involving two farthest-spaced defects along the conduction path at low voltage and (2) a subsequent transition to a scattering-limited transport after the barrier is overcome by a larger applied voltage.

Low voltage electrowetting lenticular lens by using multilayer dielectric structure

NASA Astrophysics Data System (ADS)

Lee, Junsik; Kim, Junoh; Kim, Cheoljoong; Shin, Dooseub; Koo, Gyohyun; Sim, Jee Hoon; Won, Yong Hyub

2017-02-01

Lenticular type multi-view display is one of the most popular ways for implementing three dimensional display. This method has a simple structure and exhibits a high luminance. However, fabricating the lenticular lens is difficult because it requires optically complex calculations. 2D-3D conversion is also impossible due to the fixed shape of the lenticular lens. Electrowetting based liquid lenticular lens has a simple fabrication process compared to the solid lenticular lens and the focal length of the liquid lenticular lens can be changed by applying the voltage. 3D and 2D images can be observed with a convex and a flat lens state respectively. Despite these advantages, the electrowetting based liquid lenticular lens demands high driving voltage and low breakdown voltage with a single dielectric layer structure. A certain degree of thickness of the dielectric layer is essential for a uniform operation and a low degradation over time. This paper presents multilayer dielectric structure which results in low driving voltage and the enhanced dielectric breakdown. Aluminum oxide (Al2O3), silicon oxide (SiO2) and parylene C were selected as the multilayer insulators. The total thickness of the dielectric layer of all samples was the same. This method using the multilayer dielectric structure can achieve the lower operating voltage than when using the single dielectric layer. We compared the liquid lenticular lens with three kinds of the multilayer dielectric structure to one with the parylene C single dielectric layer in regard to operational characteristics such as the driving voltage and the dielectric breakdown.

Prediction of breakdown strength of cellulosic insulating materials using artificial neural networks

NASA Astrophysics Data System (ADS)

Singh, Sakshi; Mohsin, M. M.; Masood, Aejaz

In this research work, a few sets of experiments have been performed in high voltage laboratory on various cellulosic insulating materials like diamond-dotted paper, paper phenolic sheets, cotton phenolic sheets, leatheroid, and presspaper, to measure different electrical parameters like breakdown strength, relative permittivity, loss tangent, etc. Considering the dependency of breakdown strength on other physical parameters, different Artificial Neural Network (ANN) models are proposed for the prediction of breakdown strength. The ANN model results are compared with those obtained experimentally and also with the values already predicted from an empirical relation suggested by Swanson and Dall. The reported results indicated that the breakdown strength predicted from the ANN model is in good agreement with the experimental values.

Physics-Based Compact Model for CIGS and CdTe Solar Cells: From Voltage-Dependent Carrier Collection to Light-Enhanced Reverse Breakdown: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Xingshu; Alam, Muhammad Ashraful; Raguse, John

2015-10-15

In this paper, we develop a physics-based compact model for copper indium gallium diselenide (CIGS) and cadmium telluride (CdTe) heterojunction solar cells that attributes the failure of superposition to voltage-dependent carrier collection in the absorber layer, and interprets light-enhanced reverse breakdown as a consequence of tunneling-assisted Poole-Frenkel conduction. The temperature dependence of the model is validated against both simulation and experimental data for the entire range of bias conditions. The model can be used to characterize device parameters, optimize new designs, and most importantly, predict performance and reliability of solar panels including the effects of self-heating and reverse breakdown duemore » to partial-shading degradation.« less

Note: Measuring breakdown characteristics during the hot re-ignition of high intensity discharge lamps using high frequency alternating current voltage.

PubMed

van den Bos, R A J M; Sobota, A; Manders, F; Kroesen, G M W

2013-04-01

To investigate the cold and hot re-ignition properties of High Intensity Discharge (HID) lamps in more detail an automated setup was designed in such a way that HID lamps of various sizes and under different background pressures can be tested. The HID lamps are ignited with a ramped sinusoidal voltage signal with frequencies between 60 and 220 kHz and with amplitude up to 7.5 kV. Some initial results of voltage and current measurements on a commercially available HID lamp during hot and cold re-ignition are presented.

Effect of BaTiO3 nano-particles on breakdown performance of propylene carbonate.

PubMed

Hou, Yanpan; Zhang, Zicheng; Zhang, Jiande; Liu, Zhuofeng; Song, Zuyin

2015-05-01

As an alternative to water, propylene carbonate (PC) has a good application prospect in the compact pulsed power sources for its breakdown strength higher than that of water, resistivity bigger than 10(9) Ω m, and low freezing temperature (-49 °C). In this paper, the investigation into dielectric breakdown of PC and PC-based nano-fluids (NFs) subjected to high amplitude electric field is presented with microsecond pulses applied to a 1 mm gap full of PC or NFs between spherical electrodes. One kind of NF is composed of PC mixed with 0.5-1.4 vol. % BaTiO3 (BT) nano-particles of mean diameter ≈100 nm and another is mixed with 0.3-0.8 vol. % BT nano-particles of mean diameter ≈30 nm. The experimental results demonstrate the rise of permittivity and improvement of the breakdown strength of NFs compared with PC. Moreover, it is found that there exists an optimum fraction for these NFs corresponding to tremendous surface area in nano-composites with finite mesoscopic thickness. In concrete, the dielectric breakdown voltage of NFs is 33% higher than that of PC as the volume concentration of nano-particles with a 100 nm diameter is 0.9% and the breakdown voltage of NFs is 40% higher as the volume concentration of nano-particles with a 30 nm diameter is 0.6%. These phenomena are considered as the dielectric breakdown voltage of PC-based NFs is increased because the interfaces between nano-fillers and PC matrices provide myriad trap sites for charge carriers, which play a dominant role in the breakdown performance of NFs.

Low-voltage high-reliability MEMS switch for millimeter wave 5G applications

NASA Astrophysics Data System (ADS)

Shekhar, Sudhanshu; Vinoy, K. J.; Ananthasuresh, G. K.

2018-07-01

Lack of reliability of radio-frequency microelectromechanical systems (RF MEMS) switches has inhibited their commercial success. Dielectric stiction/breakdown and mechanical shock due to high actuation voltage are common impediments in capacitive MEMS switches. In this work, we report low-actuation voltage RF MEMS switch and its reliability test. Experimental characterization of fabricated devices demonstrate that proposed MEMS switch topology needs very low voltage (4.8 V) for actuation. The mechanical resonant frequency, f 0, quality factor, Q, and switching time are measured to be 8.35 kHz, 1.2, and 33 microsecond, respectively. These MEMS switches have high reliability in terms of switching cycles. Measurements are performed using pulse waveform of magnitude of 6 V under hot-switching condition. Temperature measurement results confirm that the reported switch topology has good thermal stability. The robustness in terms of the measured pull-in voltage shows a variation of 0.08 V °C‑1. Lifetime measurement results after 10 million switching cycles demonstrate insignificant change in the RF performance without any failure. Experimental results show that low voltage improves the lifetime. Low insertion loss (less than 0.6 dB) and improved isolation (above 40 dB) in the frequency range up to 60 GHz have been reported. Measured RF characteristics in the frequency range from 10 MHz to 60 GHz support that these MEMS switches are favorable choice for mm-wave 5G applications.

Fast shut-down protection system for radio frequency breakdown and multipactor testing.

PubMed

Graves, T P; Hanson, P; Michaelson, J M; Farkas, A D; Hubble, A A

2014-02-01

Radio frequency (RF) breakdown such as multipactor or ionization breakdown is a device-limiting phenomenon for on-orbit spacecraft used for communication, navigation, or other RF payloads. Ground testing is therefore part of the qualification process for all high power components used in these space systems. This paper illustrates a shut-down protection system to be incorporated into multipactor/ionization breakdown ground testing for susceptible RF devices. This 8 channel system allows simultaneous use of different diagnostic classes and different noise floors. With initiation of a breakdown event, diagnostic signals increase above a user-specified level, which then opens an RF switch to eliminate RF power from the high power amplifier. Examples of this system in use are shown for a typical setup, illustrating the reproducibility of breakdown threshold voltages and the lack of multipactor conditioning. This system can also be utilized to prevent excessive damage to RF components in tests with sensitive or flight hardware.

CONSIDERATIONS FOR FAILURE PREVENTION IN AEROSPACE ELECTRICAL POWER SYSTEMS UTILIZING HIGHER VOLTAGES

DTIC Science & Technology

2017-07-01

work , the guideline document (1) provides a basis for identifying high voltage design risks, (2) defines areas of concern as a function of environment ... work , the guideline document 1) provides a basis for identifying high voltage design risks, 2) defines areas of concern as a function of environment ...pressures (y-axis - breakdown voltage [volts-peak]) As an example of the impact of the aerospace environment , consider the calculation of the safe

Enhancement of breakdown voltage for fully-vertical GaN-on-Si p-n diode by using strained layer superlattice as drift layer

NASA Astrophysics Data System (ADS)

Mase, Suguru; Hamada, Takeaki; Freedsman, Joseph J.; Egawa, Takashi

2018-06-01

We have demonstrated a vertical GaN-on-Si p-n diode with breakdown voltage (BV) as high as 839 V by using a low Si-doped strained layer superlattice (SLS). The p-n vertical diode fabricated by using the n‑-SLS layer as a part of the drift layer showed a remarkable enhancement in BV, when compared with the conventional n‑-GaN drift layer of similar thickness. The vertical GaN-on-Si p-n diodes with 2.3 μm-thick n‑-GaN drift layer and 3.0 μm-thick n‑-SLS layer exhibited a differential on-resistance of 4.0 Ω · cm2 and a BV of 839 V.

Anomalous memory effect in the breakdown of low-pressure argon in a long discharge tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meshchanov, A. V.; Korshunov, A. N.; Ionikh, Yu. Z., E-mail: y.ionikh@spbu.ru

2015-08-15

The characteristics of breakdown of argon in a long tube (with a gap length of 75 cm and diameter of 2.8 cm) at pressures of 1 and 5 Torr and stationary discharge currents of 5–40 mA were studied experimentally. The breakdown was initiated by paired positive voltage pulses with a rise rate of ∼10{sup 8}–10{sup 9} V/s and duration of ∼1–10 ms. The time interval between pairs was varied in the range of Τ ∼ 0.1–1 s, and that between pulses in a pair was varied from τ = 0.4 ms to ≈Τ/2. The aim of this work was tomore » detect and study the so-called “anomalous memory effect” earlier observed in breakdown in nitrogen. The effect consists in the dynamic breakdown voltage in the second pulse in a pair being higher than in the first pulse (in contrast to the “normal” memory effect, in which the relation between the breakdown voltages is opposite). It is found that this effect is observed when the time interval between pairs of pulses is such that the first pulse in a pair is in the range of the normal memory effect of the preceding pair (under the given conditions, Τ ≈ 0.1–0.4 s). In this case, at τ ∼ 10 ms, the breakdown voltage of the second pulse is higher than the reduced breakdown voltage of the first pulse. Optical observations of the ionization wave preceding breakdown in a long tube show that, in the range of the anomalous memory effect and at smaller values of τ, no ionization wave is detected before breakdown in the second pulse. A qualitative interpretation of the experimental results is given.« less

BPM Breakdown Potential in the PEP-II B-factory Storage Ring Collider

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weathersby, Stephen; Novokhatski, Alexander; /SLAC

2010-02-10

High current B-Factory BPM designs incorporate a button type electrode which introduces a small gap between the button and the beam chamber. For achievable currents and bunch lengths, simulations indicate that electric potentials can be induced in this gap which are comparable to the breakdown voltage. This study characterizes beam induced voltages in the existing PEP-II storage ring collider BPM as a function of bunch length and beam current.

Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

DOEpatents

Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

1998-01-01

A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

Experimental study of the processes accompanying argon breakdown in a long discharge tube at a reduced pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meshchanov, A. V.; Ionikh, Yu. Z., E-mail: y.ionikh@spbu.ru; Shishpanov, A. I.

Results are presented from experimental studies of the breakdown stage of a low-pressure discharge (1 and 5 Torr) in a glass tube the length of which (75 cm) is much larger than its diameter (2.8 cm). Breakdowns occurred under the action of positive voltage pulses with an amplitude of up to 9.4 kV and a characteristic rise time of 2–50 μs. The discharge current in the steady-state mode was 10–120 mA. The electrode voltage, discharge current, and radiation from the discharge gap were detected simultaneously. The dynamic breakdown voltage was measured, the prebreakdown ionization wave was recorded, and its velocitymore » was determined. The dependence of the discharge parameters on the time interval between voltage pulses (the socalled “memory effect”) was analyzed. The memory effect manifests itself in a decrease or an increase in the breakdown voltage and a substantial decrease in its statistical scatter. The time interval between pulses in this case can reach 0.5 s. The effect of illumination of the discharge tube with a light source on the breakdown was studied. It is found that the irradiation of the anode region of the tube by radiation with wavelengths of ≤500 nm substantially reduces the dynamic breakdown voltage. Qualitative explanations of the obtained results are offered.« less

Improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers

NASA Astrophysics Data System (ADS)

Sima, Wenxia; Jiang, Xiongwei; Peng, Qingjun; Sun, Potao

2018-05-01

Electrical breakdown is an important physical phenomenon in electrical equipment and electronic devices. Many related models and theories of electrical breakdown have been proposed. However, a widely recognized understanding on the following phenomenon is still lacking: impulse breakdown strength which varies with waveform parameters, decrease in the breakdown strength of AC voltage with increasing frequency, and higher impulse breakdown strength than that of AC. In this work, an improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers is proposed based on the Harmonic oscillator model. Simulation and experimental results show that, the energy of trapped charges obtained from AC stress is higher than that of impulse voltage, and the absorbed activation energy increases with the increase in the electric field frequency. Meanwhile, the frequency-dependent relative dielectric constant ε r and dielectric loss tanδ also affect the absorption of activation energy. The absorbed activation energy and modified trap level synergistically determine the breakdown strength. The mechanism analysis of breakdown strength under various voltage waveforms is consistent with the experimental results. Therefore, the proposed model of activation energy absorption in the present work may provide a new possible method for analyzing and explaining the breakdown phenomenon in semi-crystalline insulating polymers.

Calibration of Voltage Transformers and High- Voltage Capacitors at NIST

PubMed Central

Anderson, William E.

1989-01-01

The National Institute of Standards and Technology (NIST) calibration service for voltage transformers and high-voltage capacitors is described. The service for voltage transformers provides measurements of ratio correction factors and phase angles at primary voltages up to 170 kV and secondary voltages as low as 10 V at 60 Hz. Calibrations at frequencies from 50–400 Hz are available over a more limited voltage range. The service for high-voltage capacitors provides measurements of capacitance and dissipation factor at applied voltages ranging from 100 V to 170 kV at 60 Hz depending on the nominal capacitance. Calibrations over a reduced voltage range at other frequencies are also available. As in the case with voltage transformers, these voltage constraints are determined by the facilities at NIST. PMID:28053409

Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients

NASA Astrophysics Data System (ADS)

Driche, Khaled; Umezawa, Hitoshi; Rouger, Nicolas; Chicot, Gauthier; Gheeraert, Etienne

2017-04-01

Diamond has the advantage of having an exceptionally high critical electric field owing to its large band gap, which implies its high ability to withstand high voltages. At this maximum electric field, the operation of Schottky barrier diodes (SBDs), as well as FETs, may be limited by impact ionization, leading to avalanche multiplication, and hence the devices may breakdown. In this study, three of the reported impact ionization coefficients for electrons, αn, and holes, αp, in diamond at room temperature (300 K) are analyzed. Experimental data on reverse operation characteristics obtained from two different diamond SBDs are compared with those obtained from their corresponding simulated structures. Owing to the crucial role played by the impact ionization rate in determining the carrier transport, the three reported avalanche parameters implemented affect the behavior not only of the breakdown voltage but also of the leakage current for the same structure.

Post-breakdown secondary discharges at the electrode/dielectric interface of a cylindrical barrier discharge

NASA Astrophysics Data System (ADS)

Carman, Robert; Ward, Barry; Kane, Deborah

2011-10-01

The electrical breakdown characteristics of a double-walled cylindrical dielectric barrier discharge (DBD) lamp with a neon buffer gas under pulsed voltage excitation have been investigated. Following the formation of plasma in the main discharge gap, we have observed secondary breakdown phenomena at the inner and outer mesh electrode/dielectric interfaces under specific operating conditions. Plasma formation at these interfaces is investigated by monitoring the Ozone production rate in controlled flows of ultra high purity oxygen together with the overall electrical voltage-charge characteristics of the lamp. The results show that this secondary breakdown only occurs after the main discharge plasma has been established, and that significant electrical power may be dissipated in generating these spurious secondary plasmas. The results are important with regards to optimising the design and identifying efficient operating regimes of DBD based devices that employ mesh-type or wire/strip electrodes.

Mechanisms of high-gradient microwave breakdown on metal surfaces in high power microwave source

NASA Astrophysics Data System (ADS)

Xie, Jialing; Chen, Changhua; Chang, Chao; Wu, Cheng; Huo, Yankun

2017-12-01

A breakdown cavity was designed to study the high-gradient microwave breakdown on a metal surface. The breakdown cavity can be distinguished into an electron emission boundary and a bombardment boundary as there is an evident difference in amplitude of the electric field between the two planes in the cavity. Breakdown tracks on the cavity were studied with an electron scanning microscope. The tracks on the electron emission boundary with the higher electric field were eroded; a component analysis indicates that these tracks contain an emission boundary material. On the bombardment boundary with a lower electric field, two kinds of tracks exist: an erosion track containing a bombardment boundary material and a sputtered track containing an emission boundary material. From these tracks, the mechanisms of high-gradient microwave breakdown on a metal surface have been analyzed.

Dynamics of ionization processes in high-pressure nitrogen, air, and SF{sub 6} during a subnanosecond breakdown initiated by runaway electrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tarasenko, V. F., E-mail: vft@loi.hcei.tsc.ru; Beloplotov, D. V.; Lomaev, M. I.

2015-10-15

The dynamics of ionization processes in high-pressure nitrogen, air, and SF{sub 6} during breakdown of a gap with a nonuniform distribution of the electric field by nanosecond high-voltage pulses was studied experimentally. Measurements of the amplitude and temporal characteristics of a diffuse discharge and its radiation with a subnanosecond time resolution have shown that, at any polarity of the electrode with a small curvature radius, breakdown of the gap occurs via two ionization waves, the first of which is initiated by runaway electrons. For a voltage pulse with an ∼500-ps front, UV radiation from different zones of a diffuse dischargemore » is measured with a subnanosecond time resolution. It is shown that the propagation velocity of the first ionization wave increases after its front has passed one-half of the gap, as well as when the pressure in the discharge chamber is reduced and/or when SF{sub 6} is replaced with air or nitrogen. It is found that, at nitrogen pressures of 0.4 and 0.7 MPa and the positive polarity of the high-voltage electrode with a small curvature radius, the ionization wave forms with a larger (∼30 ps) time delay with respect to applying the voltage pulse to the gap than at the negative polarity. The velocity of the second ionization wave propagating from the plane electrode is measured. In a discharge in nitrogen at a pressure of 0.7 MPa, this velocity is found to be ∼10 cm/ns. It is shown that, as the nitrogen pressure increases to 0.7 MPa, the propagation velocity of the front of the first ionization wave at the positive polarity of the electrode with a small curvature radius becomes lower than that at the negative polarity.« less

High voltage variable diameter insulator

DOEpatents

Vanacek, D.L.; Pike, C.D.

1982-07-13

A high voltage feedthrough assembly having a tubular insulator extending between the ground plane ring and the high voltage ring. The insulator is made of Pyrex and decreases in diameter from the ground plane ring to the high voltage ring, producing equipotential lines almost perpendicular to the wall of the insulator to optimize the voltage-holding capability of the feedthrough assembly.

Ultra High Voltage Propellant Isolators and Insulators for JIMO Ion Thrusters

NASA Technical Reports Server (NTRS)

Banks, Bruce A.; Gaier, James R.; Hung, Ching-Cheh; Walters, Patty A.; Sechkar, Ed; Panko, Scott; Kamiotis, Christina A.

2004-01-01

Within NASA's Project Prometheus, high specific impulse ion thrusters for electric propulsion of spacecraft for the proposed Jupiter Icy Moon Orbiter (JIMO) mission to three of Jupiter's moons: Callisto, Ganymede and Europa will require high voltage operation to meet mission propulsion. The anticipated approx.6,500 volt net ion energy will require electrical insulation and propellant isolation which must exceed that used successfully by the NASA Solar Electric Propulsion Technology Readiness (NSTAR) Deep Space 1 mission thruster by a factor of approx.6. Xenon propellant isolator prototypes that operate at near one atmosphere and prototypes that operate at low pressures (<100 Torr) have been designed and are being tested for suitability to the JIMO mission requirements. Propellant isolators must be durable to Paschen breakdown, sputter contamination, high temperature, and high voltage while operating for factors longer duration than for the Deep Space 1 Mission. Insulators used to mount the thrusters as well as those needed to support the ion optics have also been designed and are under evaluation. Isolator and insulator concepts, design issues, design guidelines, fabrication considerations and performance issues are presented. The objective of the investigation was to identify candidate isolators and insulators that are sufficiently robust to perform durably and reliably during the proposed JIMO mission.

Dielectric breakdown strength of magnetic nanofluid based on insulation oil after impulse test

NASA Astrophysics Data System (ADS)

Nazari, M.; Rasoulifard, M. H.; Hosseini, H.

2016-02-01

In this study, the dielectric breakdown strength of magnetic nanofluids based on transformer mineral oil for use in power systems is reviewed. Nano oil samples are obtained from dispersion of the magnetic nanofluid within uninhibited transformer mineral oil NYTRO LIBRA as the base fluid. AC dielectric breakdown voltage measurement was carried out according to IEC 60156 standard and the lightning impulse breakdown voltage was obtained by using the sphere-sphere electrodes in an experimental setup for nano oil in volume concentration of 0.1-0.6%. Results indicate improved AC and lightning impulse breakdown voltage of nano oil compared to the base oil. AC test was performed again after applying impulse current and result showed that nano oil unlike the base oil retains its dielectric properties. Increase the dielectric strength of the nano oil is mainly due to dielectric and magnetic properties of Fe3O4 nanoparticles that act as free electrons snapper, and reduce the rate of free electrons in the ionization process.

Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

DOEpatents

Caporaso, G.J.; Sampayan, S.E.; Kirbie, H.C.

1998-10-13

A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface. 12 figs.

Factors that Influence RF Breakdown in Antenna Systems

NASA Astrophysics Data System (ADS)

Caughman, J. B. O.; Baity, F. W.; Rasmussen, D. A.; Aghazarian, M.; Castano Giraldo, C. H.; Ruzic, David

2007-11-01

One of the main power-limiting factors in antenna systems is the maximum voltage that the antenna or vacuum transmission line can sustain before breaking down. The factors that influence RF breakdown are being studied in a resonant 1/4-wavelength section of vacuum transmission line terminated with an open circuit electrode structure. Breakdown can be initiated via electron emission by high electric fields and by plasma formation in the structure, depending on the gas pressure. Recent experiments have shown that a 1 kG magnetic field can influence plasma formation at pressures as low as 8x10-5 Torr at moderate voltage levels (<5 kV). Ultraviolet light, with energies near the work function of the electrode material, can induce a multipactor discharge and limit power transmission. Details of these experimental results, including the effect of electrode materials (Ni and Cu), will be presented. Oak Ridge National Laboratory is managed by UT-Battelle, LLC, for the U.S. Dept. of Energy under contract DE-AC05-00OR22725. Work supported by USDOE with grant DE-FG02-04ER54765

A breakdown enhanced AlGaN/GaN MISFET with source-connected P-buried layer

NASA Astrophysics Data System (ADS)

Luo, Xin; Wang, Ying; Cao, Fei; Yu, Cheng-Hao; Fei, Xin-Xing

2017-12-01

This paper presents a breakdown-enhanced AlGaN/GaN MISFET with a source-connected P-buried layer combined with field plates (SC-PBL FPs MISFET). A TCAD tool was used to analyze the breakdown characteristics of the proposed structure, and results show that in comparison to the conventional gate field plate MISFET (GFP-C MISFET), the proposed structure provides a significant increase of breakdown voltage (VBK) due to redistribution of electric field in the gate-drain region induced by the SC-PBL and the FPs. The optimized SC-PBL FPs MISFET with a gate-drain spacing of 6 μm achieved a high Baliga's figure of merit of 2.6 GW cm-2 with a corresponding breakdown voltage (VBK) of 1311.62 V and specific on resistance (RON,sp) of 0.66 mΩ cm2, which demonstrates a good trade-off between RON,sp and VBK compared to the GFP-C MISFET with VBK of 524.27 V and RON,sp of 0.61 mΩ cm2.

High voltage variable diameter insulator

DOEpatents

Vanecek, David L.; Pike, Chester D.

1984-01-01

A high voltage feedthrough assembly (10) having a tubular insulator (15) extending between the ground plane ring (16) and the high voltage ring (30). The insulator (15) is made of Pyrex and decreases in diameter from the ground plane ring (16) to the high voltage ring (30), producing equipotential lines almost perpendicular to the wall (27) of the insulator (15) to optimize the voltage-holding capability of the feedthrough assembly (10).

Surface breakdown igniter for mercury arc devices

DOEpatents

Bayless, John R.

1977-01-01

Surface breakdown igniter comprises a semiconductor of medium resistivity which has the arc device cathode as one electrode and has an igniter anode electrode so that when voltage is applied between the electrodes a spark is generated when electrical breakdown occurs over the surface of the semiconductor. The geometry of the igniter anode and cathode electrodes causes the igniter discharge to be forced away from the semiconductor surface.

Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2011-01-01

the processes under reverse bias conditions. In practice, there were instances when, due to unforeseen events, the system operated at conditions when capacitors experience periodically a relatively small reverse bias for some time followed by normal, forward bias conditions. In such a case an assessment should be made on the degree to which these capacitors are degraded by application of low-voltage reverse bias, and whether this degradation can be reversed by normal operating conditions. In this study, reverse currents in different types of tantalum capacitors were monitored at different reverse voltages below 15%VR and temperatures in the range from room to 145 C for up to 150 hours to get better understanding of the degradation process and determine conditions favorable to the unstable mode of operation. The reversibility of RB degradation has been evaluated after operation of the capacitors at forward bias conditions. The effect of reverse bias stress (RBS) on reliability at normal operating conditions was evaluated using highly accelerated life testing at voltages of 1.5VR and 2 VR and by analysis of changes in distributions of breakdown voltages. Possible mechanisms of RB degradation are discussed.

Characteristics of Partial Discharge and Ozone Generation for Twisted-pair of Enameled Wires under High-repetitive Impulse Voltage Application

NASA Astrophysics Data System (ADS)

Kanazawa, Seiji; Enokizono, Masato; Shibakita, Toshihide; Umehara, Eiji; Toshimitsu, Jun; Ninomiya, Shinji; Taniguchi, Hideki; Abe, Yukari

In recent years, inverter drive machines such as a hybrid vehicle and an electric vehicle are operated under high voltage pulse with high repetition rate. In this case, inverter surge is generated and affected the machine operation. Especially, the enameled wire of a motor is deteriorated due to the partial discharge (PD) and finally breakdown of the wire will occur. In order to investigate a PD on a resistant enameled wire, characteristics of PD in the twisted pair sample under bipolar repetitive impulse voltages are investigated experimentally. The relationship between the applied voltage and discharge current was measured at PD inception and extinction, and we estimated the repetitive PD inception and extinction voltages experimentally. The corresponding optical emission of the discharge was also observed by using an ICCD camera. Furthermore, ozone concentration due to the discharge was measured during the life-time test of the resistant enameled wires from a working environmental point of view.

High voltage pulse generator

DOEpatents

Fasching, George E.

1977-03-08

An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

NASA Technical Reports Server (NTRS)

Neudeck, P. G.; Huang, W.; Dudley, M.

1998-01-01

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

Statistics of vacuum breakdown in the high-gradient and low-rate regime

NASA Astrophysics Data System (ADS)

Wuensch, Walter; Degiovanni, Alberto; Calatroni, Sergio; Korsbäck, Anders; Djurabekova, Flyura; Rajamäki, Robin; Giner-Navarro, Jorge

2017-01-01

In an increasing number of high-gradient linear accelerator applications, accelerating structures must operate with both high surface electric fields and low breakdown rates. Understanding the statistical properties of breakdown occurrence in such a regime is of practical importance for optimizing accelerator conditioning and operation algorithms, as well as of interest for efforts to understand the physical processes which underlie the breakdown phenomenon. Experimental data of breakdown has been collected in two distinct high-gradient experimental set-ups: A prototype linear accelerating structure operated in the Compact Linear Collider Xbox 12 GHz test stands, and a parallel plate electrode system operated with pulsed DC in the kV range. Collected data is presented, analyzed and compared. The two systems show similar, distinctive, two-part distributions of number of pulses between breakdowns, with each part corresponding to a specific, constant event rate. The correlation between distance and number of pulses between breakdown indicates that the two parts of the distribution, and their corresponding event rates, represent independent primary and induced follow-up breakdowns. The similarity of results from pulsed DC to 12 GHz rf indicates a similar vacuum arc triggering mechanism over the range of conditions covered by the experiments.

The DC dielectric breakdown strength of magnetic fluids based on transformer oil

NASA Astrophysics Data System (ADS)

Kopčanský, Peter; Tomčo, Ladislav; Marton, Karol; Koneracká, Martina; Timko, Milan; Potočová, Ivana

2005-03-01

The DC dielectric breakdown strength of magnetic fluids based on transformer oil TECHNOL US 4000, with different saturation magnetizations, was investigated in various orientations of external magnetic field. It was shown that the dielectric breakdown strength in H∣∣ E is strongly influenced by the aggregation effects. As a boundary volume concentration of magnetic particles, below which the magnetic fluids have better dielectric properties than pure transformer oil, the volume concentration Φ=0.01 was found. Thus magnetic fluids with Φ<0.01 are suitable for the use as a high-voltage insulation.

High-voltage, high-current, solid-state closing switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Focia, Ronald Jeffrey

2017-08-22

A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

Formation of ball streamers at a subnanosecond breakdown of gases at a high pressure in a nonuniform electric field

NASA Astrophysics Data System (ADS)

Beloplotov, D. V.; Tarasenko, V. F.; Sorokin, D. A.; Lomaev, M. I.

2017-11-01

The formation of a diffuse discharge plasma at a subnanosecond breakdown of a "cone-plane" gap filled with air, nitrogen, methane, hydrogen, argon, neon, and helium at various pressures has been studied. Nanosecond negative and positive voltage pulses have been applied to the conical electrode. The experimental data on the dynamics of plasma glow at the stage of formation and propagation of a streamer have been obtained with intensified charge-coupled device and streak cameras. It has been found that the formation of ball streamers is observed in all gases and at both polarities. A supershort avalanche electron beam has been detected behind the flat foil electrode in a wide range of pressures in the case of a negatively charged conical electrode. A mechanism of the formation of streamers at breakdown of various gases at high overvoltages has been discussed.

AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f{sub max} as high as 100 GHz

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mokerov, V. G., E-mail: vgmokerov@yandex.ru; Kuznetsov, A. L.; Fedorov, Yu. V.

2009-04-15

The N-Al{sub 0.27}Ga{sub 0.73}N/GaN High Electron Mobility Transistors (HEMTs) with different gate lengths L{sub g} (ranging from 170 nm to 0.5 {mu}m) and gate widths W{sub s} (ranging from 100 to 1200 {mu}m) have been studied. The S parameters have been measured; these parameters have been used to determine the current-gain cutoff frequency f{sub t}, the maximum oscillation frequency f{sub max}, and the power gain MSG/MAG and Mason's coefficients were investigated in the frequency range from 10 MHz to 67 GHz in relation to the gate length and gate width. It was found that the frequencies f{sub t} and f{submore » max} attain their maximum values of f{sub t} = 48 GHz and f{sub max} = 100 GHz at L{sub g} = 170 nm and W{sub g} = 100 {mu}m. The optimum values of W{sub g} and output power P out of the basic transistors have been determined for different frequencies of operation. It has also been demonstrated that the 170 nm Al{sub 0.27}Ga{sub 0.73}N/GaN HEMT technology provides both good frequency characteristics and high breakdown voltages and is very promising for high-frequency applications (up to 40 GHz)« less

Low voltage arc formation in railguns

DOEpatents

Hawke, R.S.

1985-08-05

A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

Low voltage arc formation in railguns

DOEpatents

Hawke, Ronald S.

1987-01-01

A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

Low voltage arc formation in railguns

DOEpatents

Hawke, R.S.

1987-11-17

A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile. 2 figs.

Barrier breakdown mechanism in nano-scale perpendicular magnetic tunnel junctions with ultrathin MgO barrier

NASA Astrophysics Data System (ADS)

Lv, Hua; Leitao, Diana C.; Hou, Zhiwei; Freitas, Paulo P.; Cardoso, Susana; Kämpfe, Thomas; Müller, Johannes; Langer, Juergen; Wrona, Jerzy

2018-05-01

Recently, the perpendicular magnetic tunnel junctions (p-MTJs) arouse great interest because of its unique features in the application of spin-transfer-torque magnetoresistive random access memory (STT-MRAM), such as low switching current density, good thermal stability and high access speed. In this paper, we investigated current induced switching (CIS) in ultrathin MgO barrier p-MTJs with dimension down to 50 nm. We obtained a CIS perpendicular tunnel magnetoresistance (p-TMR) of 123.9% and 7.0 Ω.μm2 resistance area product (RA) with a critical switching density of 1.4×1010 A/m2 in a 300 nm diameter junction. We observe that the extrinsic breakdown mechanism dominates, since the resistance of our p-MTJs decreases gradually with the increasing current. From the statistical analysis of differently sized p-MTJs, we observe that the breakdown voltage (Vb) of 1.4 V is 2 times the switching voltage (Vs) of 0.7 V and the breakdown process exhibits two different breakdown states, unsteady and steady state. Using Simmons' model, we find that the steady state is related with the barrier height of the MgO layer. Furthermore, our study suggests a more efficient method to evaluate the MTJ stability under high bias rather than measuring Vb. In conclusion, we developed well performant p-MTJs for the use in STT-MRAM and demonstrate the mechanism and control of breakdown in nano-scale ultrathin MgO barrier p-MTJs.

Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping

NASA Astrophysics Data System (ADS)

Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; May Lau, Kei

2015-03-01

We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of III-nitride HEMT and LED devices (HEMT-LED). To improve the breakdown characteristics of the integrated HEMT-LED devices, carbon doping was introduced in the HEMT buffer by controlling the growth pressure and V/III ratio. The breakdown voltage of the fabricated HEMTs grown on LEDs was enhanced, without degradation of the HEMT DC performance. The improved breakdown characteristics can be attributed to better isolation of the HEMT from the underlying conductive p-GaN layer of the LED structure.

High PRF high current switch

DOEpatents

Moran, Stuart L.; Hutcherson, R. Kenneth

1990-03-27

A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

Comparative study of electrical breakdown properties of deionized water and heavy water under pulsed power conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veda Prakash, G.; Kumar, R.; Saurabh, K.

A comparative study of electrical breakdown properties of deionized water (H{sub 2}O) and heavy water (D{sub 2}O) is presented with two different electrode materials (stainless steel (SS) and brass) and polarity (positive and negative) combinations. The pulsed (∼a few tens of nanoseconds) discharges are conducted by applying high voltage (∼a few hundred kV) pulse between two hemisphere electrodes of the same material, spaced 3 mm apart, at room temperature (∼26-28 °C) with the help of Tesla based pulse generator. It is observed that breakdown occurred in heavy water at lesser voltage and in short duration compared to deionized water irrespective ofmore » the electrode material and applied voltage polarity chosen. SS electrodes are seen to perform better in terms of the voltage withstanding capacity of the liquid dielectric as compared to brass electrodes. Further, discharges with negative polarity are found to give slightly enhanced discharge breakdown voltage when compared with those with positive polarity. The observations corroborate well with conductivity measurements carried out on original and post-treated liquid samples. An interpretation of the observations is attempted using Fourier transform infrared measurements on original and post-treated liquids as well as in situ emission spectra studies. A yet another important observation from the emission spectra has been that even short (nanosecond) duration discharges result in the formation of a considerable amount of ions injected into the liquid from the electrodes in a similar manner as reported for long (microseconds) discharges. The experimental observations show that deionised water is better suited for high voltage applications and also offer a comparison of the discharge behaviour with different electrodes and polarities.« less

Breakdown Characteristics of SF6 Gap Disturbed by a Metallic Protrusion under Oscillating Transient Overvoltages

NASA Astrophysics Data System (ADS)

Kawamura, Tatsuo; Lee, Bok-Hee; Nishimura, Takahiko; Ishii, Masaru

1994-04-01

This paper deals with the experimental investigations of particle-initiated breakdown of SF6 gas stressed by the oscillating transient overvoltage and non-oscillating impulse voltages. The experiments are carried out by using hemisphere-to-plane electrodes with a needle-shaped protrusion in the gas pressure range of 0.05 to 0.3 MPa. The temporal growth of the prebreakdown process is measured by a current shunt and a photomultiplier. The electrical breakdown is initiated by the streamer corona in the vicinity of a needle-shaped protrusion and the flashover of test gap is substantially influenced by the local field enhancement due to the space charge formed by the preceding streamer corona. The dependence of the voltage-time characteristics on the polarity of test voltage is appreciable, and the minimum breakdown voltage under the damped oscillating transient overvoltage is approximately the same as that under the standard lightning impulse voltage. In presence of positive polarity, the dielectric strength of SF6 gas stressed by the oscillating transient overvoltage is particularly sensitive to the local field perturbed by a sharp conducting particle. The formative time lag from the first streamer corona to breakdown is longer in negative polarity than in positive polarity and the field stabilization of space charge is more pronounced in negative polarity.

High Voltage SPT Performance

NASA Technical Reports Server (NTRS)

Manzella, David; Jacobson, David; Jankovsky, Robert

2001-01-01

A 2.3 kW stationary plasma thruster designed to operate at high voltage was tested at discharge voltages between 300 and 1250 V. Discharge specific impulses between 1600 and 3700 sec were demonstrated with thrust between 40 and 145 mN. Test data indicated that discharge voltage can be optimized for maximum discharge efficiency. The optimum discharge voltage was between 500 and 700 V for the various anode mass flow rates considered. The effect of operating voltage on optimal magnet field strength was investigated. The effect of cathode flow rate on thruster efficiency was considered for an 800 V discharge.

High voltage power supply

NASA Technical Reports Server (NTRS)

Ruitberg, A. P.; Young, K. M. (Inventor)

1985-01-01

A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

Lightning Impulse Breakdown Characteristics and Electrodynamic Process of Insulating Vegetable Oil-Based Nanofluid

NASA Astrophysics Data System (ADS)

Li, Jian; Zhang, Zhao-Tao; Zou, Ping; Du, Bin; Liao, Rui-Jin

2012-06-01

Insulating vegetable oils are considered environment-friendly and fire-resistant substitutes for insulating mineral oils. This paper presents the lightning impulse breakdown characteristic of insulating vegetable oil and insulating vegetable oil-based nanofluids. It indicates that Fe3O4 nanoparticles can increase the negative lightning impulse breakdown voltages of insulating vegetable oil by 11.8% and positive lightning impulse breakdown voltages by 37.4%. The propagation velocity of streamer is reduced by the presence of nanoparticles. The propagation velocities of streamer to positive and negative lightning impulse breakdown in the insulating vegetable oil-based nanofluids are 21.2% and 14.4% lesser than those in insulating vegetable oils, respectively. The higher electrical breakdown strength and lower streamer velocity is explained by the charging dynamics of nanoparticles in insulating vegetable oil. Space charge build-up and space charge distorted filed in point-sphere gap is also described. The field strength is reduced at the streamer tip due to the low mobility of negative nanoparticles.

Specific features of a single-pulse sliding discharge in neon near the threshold for spark breakdown

NASA Astrophysics Data System (ADS)

Trusov, K. K.

2017-08-01

Experimental data on the spatial structure of a single-pulse sliding discharge in neon at voltages below, equal to, and above the threshold for spark breakdown are discussed. The experiments were carried at gas pressures of 30 and 100 kPa and different polarities of the discharge voltage. Photographs of the plasma structure in two discharge chambers with different dimensions of the discharge zone and different thicknesses of an alumina dielectric plate on the surface of which the discharge develops are inspected. Common features of the prebreakdown discharge and its specific features depending on the voltage polarity and gas pressure are analyzed. It is shown that, at voltages below the threshold for spark breakdown, a low-current glow discharge with cathode and anode spots develops in the electrode gap. Above the breakdown threshold, regardless of the voltage polarity, spark channels directed from the cathode to the anode develop against the background of a low-current discharge.

Progress and opportunities in high-voltage microactuator powering technology towards one-chip MEMS

NASA Astrophysics Data System (ADS)

Mita, Yoshio; Hirakawa, Atsushi; Stefanelli, Bruno; Mori, Isao; Okamoto, Yuki; Morishita, Satoshi; Kubota, Masanori; Lebrasseur, Eric; Kaiser, Andreas

2018-04-01

In this paper, we address issues and solutions for micro-electro-mechanical-systems (MEMS) powering through semiconductor devices towards one-chip MEMS, especially those with microactuators that require high voltage (HV, which is more than 10 V, and is often over 100 V) for operation. We experimentally and theoretically demonstrated that the main reason why MEMS actuators need such HV is the tradeoff between resonant frequency and displacement amplitude. Indeed, the product of frequency and displacement is constant regardless of the MEMS design, but proportional to the input energy, which is the square of applied voltage in an electrostatic actuator. A comprehensive study on the principles of HV device technology and associated circuit technologies, especially voltage shifter circuits, was conducted. From the viewpoint of on-chip energy source, series-connected HV photovoltaic cells have been discussed. Isolation and electrical connection methods were identified to be key enabling technologies. Towards future rapid development of such autonomous devices, a technology to convert standard 5 V CMOS devices into HV circuits using SOI substrate and a MEMS postprocess is presented. HV breakdown experiments demonstrated this technology can hold over 700 to 1000 V, depending on the layout.

High voltage DC power supply

DOEpatents

Droege, T.F.

1989-12-19

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

High voltage DC power supply

DOEpatents

Droege, Thomas F.

1989-01-01

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

High voltage coaxial switch

DOEpatents

Rink, J.P.

1983-07-19

A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure. 3 figs.

High voltage coaxial switch

DOEpatents

Rink, John P.

1983-07-19

A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure.

High-voltage isolation transformer for sub-nanosecond rise time pulses constructed with annular parallel-strip transmission lines.

PubMed

Homma, Akira

2011-07-01

A novel annular parallel-strip transmission line was devised to construct high-voltage high-speed pulse isolation transformers. The transmission lines can easily realize stable high-voltage operation and good impedance matching between primary and secondary circuits. The time constant for the step response of the transformer was calculated by introducing a simple low-frequency equivalent circuit model. Results show that the relation between the time constant and low-cut-off frequency of the transformer conforms to the theory of the general first-order linear time-invariant system. Results also show that the test transformer composed of the new transmission lines can transmit about 600 ps rise time pulses across the dc potential difference of more than 150 kV with insertion loss of -2.5 dB. The measured effective time constant of 12 ns agreed exactly with the theoretically predicted value. For practical applications involving the delivery of synchronized trigger signals to a dc high-voltage electron gun station, the transformer described in this paper exhibited advantages over methods using fiber optic cables for the signal transfer system. This transformer has no jitter or breakdown problems that invariably occur in active circuit components.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2006-03-14

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2008-03-25

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Experimental breakdown of selected anodized aluminum samples in dilute plasmas

NASA Technical Reports Server (NTRS)

Grier, Norman T.; Domitz, Stanley

1992-01-01

Anodized aluminum samples representative of Space Station Freedom structural material were tested for electrical breakdown under space plasma conditions. In space, this potential arises across the insulating anodized coating when the spacecraft structure is driven to a negative bias relative to the external plasma potential due to plasma-surface interaction phenomena. For anodized materials used in the tests, it was found that breakdown voltage varied from 100 to 2000 volts depending on the sample. The current in the arcs depended on the sample, the capacitor, and the voltage. The level of the arc currents varied from 60 to 1000 amperes. The plasma number density varied from 3 x 10 exp 6 to 10 exp 3 ions per cc. The time between arcs increased as the number density was lowered. Corona testing of anodized samples revealed that samples with higher corona inception voltage had higher arcing inception voltages. From this it is concluded that corona testing may provide a method of screening the samples.

Plasma Discharges in Gas Bubbles in Liquid Water: Breakdown Mechanisms and Resultant Chemistry

NASA Astrophysics Data System (ADS)

Gucker, Sarah M. N.

is created either through flowing gas around the high voltage electrode in the discharge tube or self-generated by the plasma as in the steam discharge. This second method allows for large scale processing of contaminated water and for bulk chemical and optical analysis. Breakdown mechanisms of attached and unattached gas bubbles in liquid water were investigated using the first device. The breakdown scaling relation between breakdown voltage, pressure and dimensions of the discharge was studied. A Paschen-like voltage dependence for air bubbles in liquid water was discovered. The results of high-speed photography suggest the physical charging of the bubble due to a high voltage pulse; this charging can be significant enough to produce rapid kinetic motion of the bubble about the electrode region as the applied electric field changes over a voltage pulse. Physical deformation of the bubble is observed. This charging can also prevent breakdown from occurring, necessitating higher applied voltages to overcome the phenomenon. This dissertation also examines the resulting chemistry from plasma interacting with the bubble-liquid system. Through the use of optical emission spectroscopy, plasma parameters such as electron density, gas temperature, and molecular species production and intensity are found to have a time-dependence over the ac voltage cycle. This dependence is also source gas type dependent. These dependencies afford effective control over plasma-driven decomposition. The effect of plasma-produced radicals on various wastewater simulants is studied. Various organic dyes, halogenated compounds, and algae water are decomposed and assessed. Toxicology studies with melanoma cells exposed to plasma-treated dye solutions are completed, demonstrating the non-cytotoxic quality of the decomposition process. Thirdly, this dissertation examines the steam plasma system, developed through this research to circumvent the acidification associated with gas-feed discharges

High voltage solar array experiments

NASA Technical Reports Server (NTRS)

Kennerud, K. L.

1974-01-01

The interaction between the components of a high voltage solar array and a simulated space plasma is studied to obtain data for the design of a high voltage solar array capable of 15kW at 2 to 16kV. Testing was conducted in a vacuum chamber 1.5-m long by 1.5-m diameter having a plasma source which simulated the plasma conditions existing in earth orbit between 400 nautical miles and synchronous altitude. Test samples included solar array segments pinholes in insulation covering high voltage electrodes, and plain dielectric samples. Quantitative data are presented in the areas of plasma power losses, plasma and high voltage induced damage, and dielectric properties. Limitations of the investigation are described.

Structural evolution of nanoporous ultra-low k dielectrics under voltage stress

NASA Astrophysics Data System (ADS)

Raja, Archana; Shaw, Thomas; Grill, Alfred; Laibowitz, Robert; Heinz, Tony

2013-03-01

High speed interconnects in advanced integrated circuits require ultra-low-k dielectrics. Reduction of the dielectric constant is achieved via incorporation of nanopores in structures containing silicon, carbon, oxygen and hydrogen (SiCOH). We study nanoporous SiCOH films of k=2.5 and thicknesses of 40 - 400 nm. Leakage currents develop in the films under long-term voltage stress, eventually leading to breakdown and chip failure. Previous work* has shown the build-up of trap states as dielectric breakdown progresses. Using FTIR spectroscopy we have tracked the reorganization of the bonds in the SiCOH networks induced by voltage stress. Our results indicate that the cleavage of the Si-C and SiC-O bonds contribute toward increase in the density of bulk trapping states as breakdown is approached. AC conductance and capacitance measurements have also been carried out to describe interfacial and bulk traps and mechanisms. Comparison of breakdown properties of films with differing carbon content will also be presented to further delineate the role of carbon. *Atkin, J.M.; Shaw, T.M.; Liniger, E.; Laibowitz, R.B.; Heinz, T.F. Reliability Physics Symposium (IRPS), 2012 IEEE International Supported by the Semiconductor Research Corporation

Mechanism of vacuum breakdown in radio-frequency accelerating structures

NASA Astrophysics Data System (ADS)

Barengolts, S. A.; Mesyats, V. G.; Oreshkin, V. I.; Oreshkin, E. V.; Khishchenko, K. V.; Uimanov, I. V.; Tsventoukh, M. M.

2018-06-01

It has been investigated whether explosive electron emission may be the initiating mechanism of vacuum breakdown in the accelerating structures of TeV linear electron-positron colliders (Compact Linear Collider). The physical processes involved in a dc vacuum breakdown have been considered, and the relationship between the voltage applied to the diode and the time delay to breakdown has been found. Based on the results obtained, the development of a vacuum breakdown in an rf electric field has been analyzed and the main parameters responsible for the initiation of explosive electron emission have been estimated. The formation of craters on the cathode surface during explosive electron emission has been numerically simulated, and the simulation results are discussed.

Preparation Nano-Structure Polytetrafluoroethylene (PTFE) Functional Film on the Cellulose Insulation Polymer and Its Effect on the Breakdown Voltage and Hydrophobicity Properties

PubMed Central

Liu, Cong; Li, Yanqing; Liao, Ruijin; Liao, Qiang; Tang, Chao

2018-01-01

Cellulose insulation polymer is an important component of oil-paper insulation, which is widely used in power transformer. The weight of the cellulose insulation polymer materials is as high as tens of tons in the larger converter transformer. Excellent performance of oil-paper insulation is very important for ensuring the safe operation of larger converter transformer. An effective way to improve the insulation and the physicochemical property of the oil impregnated insulation pressboard/paper is currently a popular research topic. In this paper, the polytetrafluoroethylene (PTFE) functional film was coated on the cellulose insulation pressboard by radio frequency (RF) magnetron sputtering to improve its breakdown voltage and the hydrophobicity properties. X-ray photoelectron spectroscopy (XPS) results show that the nano-structure PTFE functional film was successfully fabricated on the cellulose insulation pressboard surface. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) present that the nanoscale size PTFE particles were attached to the pressboard surface and it exists in the amorphous form. Atomic force microscopy (AFM) shows that the sputtered pressboard surface is still rough. The rough PTFE functional film and the reduction of the hydrophilic hydroxyl of the surface due to the shielding effect of PTFE improve the breakdown and the hydrophobicity properties of the cellulose insulation pressboard obviously. This paper provides an innovative way to improve the performance of the cellulose insulation polymer. PMID:29883376

Preparation Nano-Structure Polytetrafluoroethylene (PTFE) Functional Film on the Cellulose Insulation Polymer and Its Effect on the Breakdown Voltage and Hydrophobicity Properties.

PubMed

Hao, Jian; Liu, Cong; Li, Yanqing; Liao, Ruijin; Liao, Qiang; Tang, Chao

2018-05-21

Cellulose insulation polymer is an important component of oil-paper insulation, which is widely used in power transformer. The weight of the cellulose insulation polymer materials is as high as tens of tons in the larger converter transformer. Excellent performance of oil-paper insulation is very important for ensuring the safe operation of larger converter transformer. An effective way to improve the insulation and the physicochemical property of the oil impregnated insulation pressboard/paper is currently a popular research topic. In this paper, the polytetrafluoroethylene (PTFE) functional film was coated on the cellulose insulation pressboard by radio frequency (RF) magnetron sputtering to improve its breakdown voltage and the hydrophobicity properties. X-ray photoelectron spectroscopy (XPS) results show that the nano-structure PTFE functional film was successfully fabricated on the cellulose insulation pressboard surface. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) present that the nanoscale size PTFE particles were attached to the pressboard surface and it exists in the amorphous form. Atomic force microscopy (AFM) shows that the sputtered pressboard surface is still rough. The rough PTFE functional film and the reduction of the hydrophilic hydroxyl of the surface due to the shielding effect of PTFE improve the breakdown and the hydrophobicity properties of the cellulose insulation pressboard obviously. This paper provides an innovative way to improve the performance of the cellulose insulation polymer.

Numerical modeling of high-voltage circuit breaker arcs and their interraction with the power system

NASA Astrophysics Data System (ADS)

Orama, Lionel R.

In this work the interaction between series connected gas and vacuum circuit breaker arcs has been studied. The breakdown phenomena in vacuum interrupters during the post arc current period have been of special interest. Numerical models of gas and vacuum arcs were developed in the form of black box models. Especially, the vacuum post arc model was implemented by combining the existing transition model with an ion density function and expressions for the breakdown mechanisms. The test series studied reflect that for electric fields on the order of 10sp7V/m over the anode, the breakdown of the vacuum gap can result from a combination of both thermal and electrical stresses. For a particular vacuum device, the vacuum model helps to find the interruption limits of the electric field and power density over the anode. The series connection of gas and vacuum interrupters always performs better than the single gas device. Moreover, to take advantage of the good characteristics of both devices, the time between the current zero crossing in each interrupter can be changed. This current zero synchronization is controlled by changing the capacitance in parallel to the gas device. This gas/vacuum interrupter is suitable for interruption of very stressful short circuits in which the product of the dI/dt before current zero and the dV/dt after current zero is very high. Also, a single SF6 interrupter can be replaced by an air circuit breaker of the same voltage rating in series with a vacuum device without compromising the good performance of the SF6 device. Conceptually, a series connected vacuum device can be used for high voltage applications with equal distribution of electrical stresses between the individual interrupters. The equalization can be made by a sequential opening of the individual contact pairs, beginning with the interruptors that are closer to ground potential. This could eliminate the use of grading capacitors.

APPARATUS FOR REGULATING HIGH VOLTAGE

DOEpatents

Morrison, K.G.

1951-03-20

This patent describes a high-voltage regulator of the r-f type wherein the modulation of the r-f voltage is accomplished at a high level, resulting in good stabilization over a large range of load conditions.

High Voltage Insulation Technology

NASA Astrophysics Data System (ADS)

Scherb, V.; Rogalla, K.; Gollor, M.

2008-09-01

In preparation of new Electronic Power Conditioners (EPC's) for Travelling Wave Tub Amplifiers (TWTA's) on telecom satellites a study for the development of new high voltage insulation technology is performed. The initiative is mandatory to allow compact designs and to enable higher operating voltages. In a first task a market analysis was performed, comparing different materials with respect to their properties and processes. A hierarchy of selection criteria was established and finally five material candidates (4 Epoxy resins and 1 Polyurethane resin) were selected to be further investigated in the test program. Samples for the test program were designed to represent core elements of an EPC, the high voltage transformer and Printed Circuit Boards of the high voltage section. All five materials were assessed in the practical work flow of the potting process and electrical, mechanical, thermal and lifetime testing was performed. Although the lifetime tests results were overlayed by a larges scatter, finally two candidates have been identified for use in a subsequent qualification program. This activity forms part of element 5 of the ESA ARTES Programme.

Gas breakdown driven by L band short-pulse high-power microwave

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Yiming; Yuan Chengwei; Qian Baoliang

2012-12-15

High power microwave (HPM) driven gas breakdown is a major factor in limiting the radiation and transmission of HPM. A method that HPM driven gas breakdown could be obtained by changing the aperture of horn antenna is studied in this paper. Changing the effective aperture of horn antenna can adjust the electric field in near field zone, leading to gas breakdown. With this method, measurements of air and SF{sub 6} breakdowns are carried out on a magnetically insulated transmission-line oscillators, which is capable of generating HPM with pulse duration of 30 ns, and frequency of 1.74 GHz. The typical breakdownmore » waveforms of air and SF{sub 6} are presented. Besides, the breakdown field strengths of the two gases are derived at different pressures. It is found that the effects of air and SF{sub 6} breakdown on the transmission of HPM are different: air breakdown mainly shortens the pulse width of HPM while SF{sub 6} breakdown mainly reduces the peak output power of HPM. The electric field threshold of SF{sub 6} is about 2.4 times larger than that of air. These differences suggest that gas properties have a great effect on the transmission characteristic of HPM in gases.« less

Numerical Study on Alternating Current Breakdown Mechanism Between Sphere-Sphere Electrodes in Transformer Oil-Based Magnetic Nanofluids.

PubMed

Lee, Won-Ho; Lee, Jong-Chul

2018-09-01

A numerical simulation was developed for magnetic nanoparticles in a liquid dielectric to investigate the AC breakdown voltage of the magnetic nanofluids according to the volume concentration of the magnetic nanoparticles. In prior research, we found that the dielectric breakdown voltage of the transformer oil-based magnetic nanofluids was positively or negatively affected according to the amount of magnetic nanoparticles under a testing condition of dielectric fluids, and the trajectory of the magnetic nanoparticles in a fabricated chip was visualized to verify the related phenomena via measurements and computations. In this study, a numerical simulation of magnetic nanoparticles in an insulating fluid was developed to model particle tracing for AC breakdown mechanisms happened to a sphere-sphere electrode configuration and to propose a possible mechanism regarding the change in the breakdown strength due to the behavior of the magnetic nanoparticles with different applied voltages.

Reversible, high-voltage square-wave pulse generator for triggering spark gaps.

PubMed

Robledo-Martinez, A; Vega, R; Cuellar, L E; Ruiz-Meza, A; Guzmán, E

2007-05-01

A design is presented for a reversible, square-pulse generator that employs coaxial cables for charge storage and pulse formation and a thyratron as the switch. The generator has a nominal output voltage of 5-30 kV and a pulse duration determined by the cable's physical length. Two variations are presented: (1) a single-stage one consisting of cable that is charged via its shield on one end and discharged with a thyratron on the opposite end and (2) a two-stage one having an inverting circuit that uses a coaxial cable to reverse the polarity of the pulse. The generator operates with "flying shields," i.e., high-voltage pulses also propagate on the outside of the cables; this calls for a dedicated insulation that avoids breakdown between sections of the cable's shield. The rise time obtained is mostly dictated by the switching time of the thyratron; with the one we used in the tests, rise times in the range of 30-40 ns were obtained. We present the results obtained in the implementation of the generators as well as its application to fire a large Marx generator.

Effect of the change in the load resistance on the high voltage pulse transformer of the intense electron-beam accelerators.

PubMed

Cheng, Xin-bing; Liu, Jin-liang; Qian, Bao-liang; Zhang, Yu; Zhang, Hong-bo

2009-11-01

A high voltage pulse transformer (HVPT) is usually used as a charging device for the pulse forming line (PFL) of intense electron-beam accelerators (IEBAs). Insulation of the HVPT is one of the important factors that restrict the development of the HVPT. Until now, considerable effort has been focused on minimizing high field regions to avoid insulation breakdown between windings. Characteristics of the HVPT have been widely discussed to achieve these goals, but the effects of the PFL and load resistance on HVPT are usually neglected. In this paper, a HVPT is used as a charging device for the PFL of an IEBA and the effect of the change in the load resistance on the HVPT of the IEBA is presented. When the load resistance does not match the wave impedance of the PFL, a high-frequency bipolar oscillating voltage will occur, and the amplitude of the oscillating voltage will increase with the decrease in the load resistance. The load resistance approximates to zero and the amplitude of the oscillating voltage is much higher. This makes it easier for surface flashover along the insulation materials to form and decrease the lifetime of the HVPT.

Fundamentals of undervoltage breakdown through the Townsend mechanism

NASA Astrophysics Data System (ADS)

Cooley, James E.

electrons required to achieve breakdown is measured in argon at pd values of 3-10 Torr-m. The required electron pulse magnitude was found to scale inversely with pressure and voltage in this parameter range. When higher-power infrared laser pulses were used to heat the cathode surface, a faster, streamer-like breakdown mechanism was occasionally observed. As an example application, an investigation into the requirements for initiating discharges in Gas-fed Pulsed Plasma Thrusters (GFPPTs) is conducted. Theoretical investigations based on order-of-magnitude characterizations of previous GFPPT designs reveal that high-conductivity arc discharges are required for critically-damped matching of circuit components, and that relatively fast streamer breakdown is preferable to minimize delay between triggering and current sheet formation. The faster breakdown mechanism observed in the experiments demonstrates that such a discharge process can occur. However, in the parameter space occupied by most thrusters, achieving the phenomenon by way of a space charge distortion caused purely by an electron pulse should not be possible. Either a transient change in the distribution of gas density, through ablation or desorption, or a thruster design that occupies a different parameter space, such as one that uses higher mass bits, higher voltages, or smaller electrode spacing, is required for undervoltage breakdown to occur.

Breakdown Characteristics of a Radio-Frequency Atmospheric Glow Discharge

NASA Astrophysics Data System (ADS)

Shi, Jianjun; Kong, Michael

2004-09-01

Radio-frequency (rf) atmospheric pressure glow discharges (APGD) are a capacitive nonthermal plasma with distinct advantage of low gas temperature and long-term stability. In practice their ignition is challenging particularly when they are generated at large electrode gaps. To this end, this contribution reports a one-dimensional fluid simulation of gas breakdown over a large pressure range of 100 - 760 Torr so that key physical processes can be understood in the ignition phase of rf APGD. Our model is an electron-hybrid model in which electrons are treated kinetically and all other plasma species are treated hydrodynamically. Computational results suggest that as the pressure-distance product increases from 25 Torr cm upwards the breakdown voltage increases in a way that resembles the right-hand-side branch of a Pachen curve. Importance of secondary electron emission is shown as well as its dependence on gas pressure even though identical electrode material is assumed. With these factors considered, excellent agreement with experimental data is achieved. Finally frequency dependence of the breakdown voltage is calculated and again found to agree with experimental data.

30 CFR 75.826 - High-voltage trailing cables.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous mining...

Modeling of breakdown during the post-arc phase of a vacuum circuit breaker

NASA Astrophysics Data System (ADS)

Sarrailh, P.; Garrigues, L.; Boeuf, J. P.; Hagelaar, G. J. M.

2010-12-01

After a high-current interruption in a vacuum circuit breaker (VCB), the electrode gap is filled with a high density copper vapor plasma in a large copper vapor density (~1022 m-3). The copper vapor density is sustained by electrode evaporation. During the post-arc phase, a rapidly increasing voltage is applied to the gap, and a sheath forms and expands, expelling the plasma from the gap when circuit breaking is successful. There is, however, a risk of breakdown during that phase, leading to the failure of the VCB. Preventing breakdown during the post-arc phase is an important issue for the improvement of VCB reliability. In this paper, we analyze the risk of Townsend breakdown in the high copper vapor density during the post-arc phase using a numerical model that takes into account secondary electron emission, volume ionization, and plasma and neutral transport, for given electrode temperatures. The simulations show that fast neutrals created in the cathode sheath by charge exchange collisions with ions generate a very large secondary electron emission current that can lead to Townsend breakdown. The results also show that the risk of failure of the VCB due to Townsend breakdown strongly depends on the electrode temperatures (which govern the copper vapor density) and becomes important for temperatures greater than 2100 K, which can be reached in vacuum arcs. The simulations also predict that a hotter anode tends to increase the risk of Townsend breakdown.

Piezoelectric transformers for low-voltage generation of gas discharges and ionic winds in atmospheric air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Michael J.; Go, David B., E-mail: dgo@nd.edu; Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556

To generate a gas discharge (plasma) in atmospheric air requires an electric field that exceeds the breakdown threshold of ∼30 kV/cm. Because of safety, size, or cost constraints, the large applied voltages required to generate such fields are often prohibitive for portable applications. In this work, piezoelectric transformers are used to amplify a low input applied voltage (<30 V) to generate breakdown in air without the need for conventional high-voltage electrical equipment. Piezoelectric transformers (PTs) use their inherent electromechanical resonance to produce a voltage amplification, such that the surface of the piezoelectric exhibits a large surface voltage that can generate corona-like dischargesmore » on its corners or on adjacent electrodes. In the proper configuration, these discharges can be used to generate a bulk air flow called an ionic wind. In this work, PT-driven discharges are characterized by measuring the discharge current and the velocity of the induced ionic wind with ionic winds generated using input voltages as low as 7 V. The characteristics of the discharge change as the input voltage increases; this modifies the resonance of the system and subsequent required operating parameters.« less

Investigation of multipactor breakdown in communication satellite microwave co-axial systems

NASA Astrophysics Data System (ADS)

Nagesh, S. K.; Revannasiddiah, D.; Shastry, S. V. K.

2005-01-01

Multipactor breakdown or multipactor discharge is a form of high frequency discharge that may occur in microwave components operating at very low pressures. Some RF components of multi-channel communication satellites have co-axial geometry and handle high RF power under near-vacuum conditions. The breakdown occurs due to secondary electron resonance, wherein electrons move back and forth in synchronism with the RF voltage across the gap between the inner and outer conductors of the co-axial structure. If the yield of secondary electrons from the walls of the co-axial structure is greater than unity, then the electron density increases with time and eventually leads to the breakdown. In this paper, the current due to the oscillating electrons in the co-axial geometry has been treated as a radially oriented Hertzian dipole. The electric field, due to this dipole, at any point in the coaxial structure, may then be determined by employing the dyadic Green's function technique. This field has been compared with the field that would exist in the absence of multipactor.

Kerr electro-optic field mapping study of the effect of charge injection on the impulse breakdown strength of transformer oil

NASA Astrophysics Data System (ADS)

Zhang, X.; Zahn, M.

2013-10-01

The smart use of charge injection to improve breakdown strength in transformer oil is demonstrated in this paper. Hypothetically, bipolar homo-charge injection with reduced electric field at both electrodes may allow higher voltage operation without insulation failure, since electrical breakdown usually initiates at the electrode-dielectric interfaces. To find experimental evidence, the applicability and limitation of the hypothesis is first analyzed. Impulse breakdown tests and Kerr electro-optic field mapping measurements are then conducted with different combinations of parallel-plate aluminum and brass electrodes stressed by millisecond duration impulse. It is found that the breakdown voltage of brass anode and aluminum cathode is ˜50% higher than that of aluminum anode and brass cathode. This can be explained by charge injection patterns from Kerr measurements under a lower voltage, where aluminum and brass electrodes inject negative and positive charges, respectively. This work provides a feasible approach to investigating the effect of electrode material on breakdown strength.

Relating Silicon Carbide Avalanche Breakdown Diode Design to Pulsed-Energy Capability

DTIC Science & Technology

2017-03-01

Relating Silicon Carbide Avalanche Breakdown Diode Design to Pulsed- Energy Capability Damian Urciuoli, Miguel Hinojosa, and Ronald Green US...were pulse tested in an inductive load circuit at peak powers of over 110 kW. Total pulsed- energy dissipation was kept nearly the same among the...voltages about which design provides the highest pulsed- energy capability. Keywords: Avalanche; Breakdown; Diode; Silicon Carbide Introduction

High-frequency high-voltage high-power DC-to-DC converters

NASA Astrophysics Data System (ADS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-07-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

High-frequency high-voltage high-power DC-to-DC converters

NASA Technical Reports Server (NTRS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-01-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

Effect of anode material on the breakdown in low-pressure helium gas

NASA Astrophysics Data System (ADS)

Demidov, V. I.; Adams, S. F.; Kudryavtsev, A. A.; Kurlyandskaya, I. P.; Miles, J. A.; Tolson, B. A.

2017-10-01

The electric breakdown of gases is one of the fundamental phenomena of gas discharge physics. It has been studied for a long time but still attracts incessant interest of researchers. Besides the interesting physics, breakdown is important for many applications including development of reliable electric insulation in electric grids and the study of different aspects of gas discharge physics. In this work an experimental study of the electric breakdown in helium gas for the plane-parallel electrode configuration has been conducted using a copper cathode and a variety of anode materials: copper, aluminum, stainless steel, graphite, platinum-plated aluminum and gold-plated aluminum. According to the Paschen law for studied electrode configuration, the breakdown voltage is a function of the product of gas pressure and inter-electrode gap. The breakdown processes on the left, lower pressure side of the Paschen curve have been the subject of this investigation. For those pressures, the Paschen curve may become multi-valued, where any given pressure corresponds to three breakdown voltage values. It was experimentally demonstrated that the form of the Paschen curve might strongly depend on the material of the anode and the cleanness of the anode surface. A possible explanation for this phenomenon is that electrons streaming from the cathode are reflected by the surface of the anode.

High-frequency high-voltage high-power DC-to-DC converters

NASA Technical Reports Server (NTRS)

Wilson, T. G.; Owen, H. A.; Wilson, P. M.

1982-01-01

A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

High-frequency high-voltage high-power DC-to-DC converters

NASA Astrophysics Data System (ADS)

Wilson, T. G.; Owen, H. A.; Wilson, P. M.

1982-09-01

A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

Temperature controlled high voltage regulator

DOEpatents

Chiaro, Jr., Peter J.; Schulze, Gerald K.

2004-04-20

A temperature controlled high voltage regulator for automatically adjusting the high voltage applied to a radiation detector is described. The regulator is a solid state device that is independent of the attached radiation detector, enabling the regulator to be used by various models of radiation detectors, such as gas flow proportional radiation detectors.

Self-Healable Electrical Insulation for High Voltage Applications

NASA Technical Reports Server (NTRS)

Williams, Tiffany S.

2017-01-01

Polymeric aircraft electrical insulation normally degrades by partial discharge with increasing voltage, which causes excessive localized Joule heating in the material and ultimately leads to dielectric failure of the insulator through thermal breakdown. Developing self-healing insulation could be a viable option to mitigate permanent mechanical degradation, thus increasing the longevity of the insulation. Instead of relying on catalyst and monomer-filled microcapsules to crack, flow, and cure at the damaged sites described in well-published mechanisms, establishment of ionic crosslinks could allow for multiple healing events to occur with the added benefit of achieving full recovery strength under certain thermal environments. This could be possible if the operating temperature of the insulator is the same as or close to the temperature where ionic crosslinks are formed. Surlyn, a commercial material with ionic crosslinks, was investigated as a candidate self-healing insulator based off prior demonstrations of self-healing behavior. Thin films of varying thicknesses were investigated and the effects of thickness on the dielectric strength were evaluated and compared to representative polymer insulators. The effects of thermal conditioning on the recovery strength and healing were observed as a function of time following dielectric breakdown. Moisture absorption was also studied to determine if moisture absorption rates in Surlyn were lower than that of common polyimides.

30 CFR 77.810 - High-voltage equipment; grounding.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage equipment; grounding. 77.810... COAL MINES Surface High-Voltage Distribution § 77.810 High-voltage equipment; grounding. Frames, supporting structures, and enclosures of stationary, portable, or mobile high-voltage equipment shall be...

Surface interactions and high-voltage current collection

NASA Technical Reports Server (NTRS)

Mandell, M. J.; Katz, I.

1985-01-01

Spacecraft of the future will be larger and have higher power requirements than any flown to date. For several reasons, it is desirable to operate a high power system at high voltage. While the optimal voltages for many future missions are in the range 500 to 5000 volts, the highest voltage yet flown is approximately 100 volts. The NASCAP/LEO code is being developed to embody the phenomenology needed to model the environmental interactions of high voltage spacecraft. Some plasma environment are discussed. The treatment of the surface conductivity associated with emitted electrons and some simulations by NASCAP/LEO of ground based high voltage interaction experiments are described.

Experimental study of rotating wind turbine breakdown characteristics in large scale air gaps

NASA Astrophysics Data System (ADS)

Wang, Yu; Qu, Lu; Si, Tianjun; Ni, Yang; Xu, Jianwei; Wen, Xishan

2017-06-01

When a wind turbine is struck by lightning, its blades are usually rotating. The effect of blade rotation on a turbine’s ability to trigger a lightning strike is unclear. Therefore, an arching electrode was used in a wind turbine lightning discharge test to investigate the difference in lightning triggering ability when blades are rotating and stationary. A negative polarity switching waveform of 250/2500 μs was applied to the arching electrode and the up-and-down method was used to calculate the 50% discharge voltage. Lightning discharge tests of a 1:30 scale wind turbine model with 2, 4, and 6 m air gaps were performed and the discharge process was observed. The experimental results demonstrated that when a 2 m air gap was used, the breakdown voltage increased as the blade speed was increased, but when the gap length was 4 m or longer, the trend was reversed and the breakdown voltage decreased. The analysis revealed that the rotation of the blades changes the charge distribution in the blade-tip region, promotes upward leader development on the blade tip, and decreases the breakdown voltage. Thus, the blade rotation of a wind turbine increases its ability to trigger lightning strikes.

Modular high voltage power supply for chemical analysis

DOEpatents

Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

2007-01-09

A high voltage power supply for use in a system such as a microfluidics system, uses a DC--DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC--DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

Modular high voltage power supply for chemical analysis

DOEpatents

Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

2010-05-04

A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

Modular high voltage power supply for chemical analysis

DOEpatents

Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

2008-07-15

A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

Comparative High Voltage Impulse Measurement

PubMed Central

FitzPatrick, Gerald J.; Kelley, Edward F.

1996-01-01

A facility has been developed for the determination of the ratio of pulse high voltage dividers over the range from 10 kV to 300 kV using comparative techniques with Kerr electro-optic voltage measurement systems and reference resistive voltage dividers. Pulse voltage ratios of test dividers can be determined with relative expanded uncertainties of 0.4 % (coverage factor k = 2 and thus a two standard deviation estimate) or less using the complementary resistive divider/Kerr cell reference systems. This paper describes the facility and specialized procedures used at NIST for the determination of test voltage divider ratios through comparative techniques. The error sources and special considerations in the construction and use of reference voltage dividers to minimize errors are discussed, and estimates of the measurement uncertainties are presented. PMID:27805083

A consistent approach to estimate the breakdown voltage of high voltage electrodes under positive switching impulses

NASA Astrophysics Data System (ADS)

Arevalo, L.; Wu, D.; Jacobson, B.

2013-08-01

The main propose of this paper is to present a physical model of long air gap electrical discharges under positive switching impulses. The development and progression of discharges in long air gaps are attributable to two intertwined physical phenomena, namely, the leader channel and the streamer zone. Experimental studies have been used to develop empirical and physical models capable to represent the streamer zone and the leader channel. The empirical ones have led to improvements in the electrical design of high voltage apparatus and insulation distances, but they cannot take into account factors associated with fundamental physics and/or the behavior of materials. The physical models have been used to describe and understand the discharge phenomena of laboratory and lightning discharges. However, because of the complex simulations necessary to reproduce real cases, they are not in widespread use in the engineering of practical applications. Hence, the aim of the work presented here is to develop a model based on physics of the discharge capable to validate and complement the existing engineering models. The model presented here proposes a new geometrical approximation for the representation of the streamer and the calculation of the accumulated electrical charge. The model considers a variable streamer region that changes with the temporal and spatial variations of the electric field. The leader channel is modeled using the non local thermo-equilibrium equations. Furthermore, statistical delays before the inception of the first corona, and random distributions to represent the tortuous nature of the path taken by the leader channel were included based on the behavior observed in experimental tests, with the intention of ensuring the discharge behaved in a realistic manner. For comparison purposes, two different gap configurations were simulated. A reasonable agreement was found between the physical model and the experimental test results.

30 CFR 75.813 - High-voltage longwalls; scope.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage longwalls; scope. 75.813 Section 75.813 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.813 High-voltage...

30 CFR 75.813 - High-voltage longwalls; scope.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage longwalls; scope. 75.813 Section 75.813 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.813 High-voltage...

High voltage power transistor development

NASA Technical Reports Server (NTRS)

Hower, P. L.

1981-01-01

Design considerations, fabrication procedures, and methods of evaluation for high-voltage power-transistor development are discussed. Technique improvements such as controlling the electric field at the surface and perserving lifetimes in the collector region which have advanced the state of the art in high-voltage transistors are discussed. These improvements can be applied directly to the development of 1200 volt, 200 ampere transistors.

Multijunction high-voltage solar cell

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.; Goradia, C.; Chai, A. T.

1981-01-01

Multijunction cell allows for fabrication of high-voltage solar cell on single semiconductor wafer. Photovoltaic energy source using cell is combined on wafer with circuit it is to power. Cell consists of many voltage-generating regions internally or externally interconnected to give desired voltage and current combination. For computer applications, module is built on silicon wafer with energy for internal information processing and readouts derived from external light source.

Enhanced shock wave generation via pre-breakdown acceleration using water electrolysis in negative streamer pulsed spark discharges

NASA Astrophysics Data System (ADS)

Lee, Kern; Chung, Kyoung-Jae; Hwang, Y. S.

2018-03-01

This paper presents a method for enhancement of shock waves generated from underwater pulsed spark discharges with negative (anode-directed) subsonic streamers, for which the pre-breakdown process is accelerated by preconditioning a gap with water electrolysis. Hydrogen microbubbles are produced at the cathode by the electrolysis and move towards the anode during the preconditioning phase. The numbers and spatial distributions of the microbubbles vary with the amplitude and duration of each preconditioning pulse. Under our experimental conditions, the optimum pulse duration is determined to be ˜250 ms at a pulse voltage of 400 V, where the buoyancy force overwhelms the electric force and causes the microbubbles to be swept out from the water gap. When a high-voltage pulse is applied to the gap just after the preconditioning pulse, the pre-breakdown process is significantly accelerated in the presence of the microbubbles. At the optimum preconditioning pulse duration, the average breakdown delay is reduced by 87% and, more importantly, the energy consumed during the pre-breakdown period decreases by 83%. This reduced energy consumption during the pre-breakdown period, when combined with the morphological advantages of negative streamers, such as thicker and longer stalks, leads to a significant improvement in the measured peak pressure (˜40%) generated by the underwater pulsed spark discharge. This acceleration of pre-breakdown using electrolysis overcomes the biggest drawback of negative subsonic discharges, which is slow vapor bubble formation due to screening effects, and thus enhances the efficiency of the shock wave generation process using pulsed spark discharges in water.

AC electrical breakdown phenomena of epoxy/layered silicate nanocomposite in needle-plate electrodes.

PubMed

Park, Jae-Jun; Lee, Jae-Young

2013-05-01

Epoxy/layered silicate nanocomposite for the insulation of heavy electric equipments were prepared by dispersing 1 wt% of a layered silicate into an epoxy matrix with a homogenizing mixer and then AC electrical treeing and breakdown tests were carried out. Wide-angle X-ray diffraction (WAXD) analysis and transmission electron microscopy (TEM) observation showed that nano-sized monolayers were exfoliated from a multilayered silicate in the epoxy matrix. When the nano-sized silicate layers were incorporated into the epoxy matrix, the breakdown rate in needle-plate electrode geometry was 10.6 times lowered than that of the neat epoxy resin under the applied electrical field of 520.9 kV/mm at 30 degrees C, and electrical tree propagated with much more branches in the epoxy/layered silicate nanocomposite. These results showed that well-dispersed nano-sized silicate layers retarded the electrical tree growth rate. The effects of applied voltage and ambient temperature on the tree initiation, growth, and breakdown rate were also studied, and it was found that the breakdown rate was largely increased, as the applied voltage and ambient temperature increased.

Self-organized and uniform TiO2 nanotube arrays with optimized NH4F concentration in electrolyte by high voltage electrochemical anodization

NASA Astrophysics Data System (ADS)

Chamanzadeh, Z.; Noormohammadi, M.; Zahedifar, M.

2018-05-01

Large diameter and ordered TiO2 nanotubes (NTs) were fast fabricated in an electrolyte containing lactic acid and ethylene glycol with different amount of NH4F at various high anodization voltages up to 220 V. In this work, we could optimize F‑ ionic concentration in the electrolyte at each anodization voltage and the uniform films without any oxide breakdown were successfully achieved. The optimum NH4F concentration at which NTs can be formed homogeneously, decreases with the increment of anodization voltage. As a result, the fastest mean growth rate of 2.45 μm min‑1 was attained in 0.075 M NH4F at 150 V. Growth rate of TiO2 nanotubes is explained taking into account the role of F‑ ions and their limited diffusion through TiO2 nanotubes from bulk electrolyte. The interpore distance of the nanotubes is increased with enhanced anodization voltage.

Development and fabrication of low ON resistance high current vertical VMOS power FETs

NASA Technical Reports Server (NTRS)

Kay, S.

1979-01-01

The design of a VMOS Power FET exhibiting low ON resistance, high current as well as high breakdown voltage and fast switching speeds is described. The design which is based on a 1st-order device model, features a novel polysilicon-gate structure and fieldplated groove termination to achieve high packing density and high breakdown voltage, respectively. One test chip, named VNTKI, can block 180 V at an ON resistence of 2.5 ohm. A 150 mil x 200 mil (.19 sq cm) experimental chip has demonstrated a breakdown voltage of 200v, an ON resistance of 0.12 ohm, a switching time of less than 100 ns, and a pulse drain - current of 50 A with 10 V gate drive.

Effects of Electrical Insulation Breakdown Voltage And Partial Discharge

NASA Astrophysics Data System (ADS)

Bahrim, F. S.; Rahman, N. F. A.; Haris, H. C. M.; Salim, N. A.

2018-03-01

During the last few decades, development of new materials using composite materials has been of much interest. The Cross-linked Polyethylene (XLPE) which is insulated power cables has been widely used. This paper describes the theoretical analysis, fundamental experiments and application experiments for the XLPE cable insulation. The composite that has been tested is a commercial XLPE and Polypropylene with 30% fiber glass. The results of breakdown strength and partial discharge (PD) behavior described the insulating performance of the composite.

OB's high voltage laboratory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1966-01-01

The January issue of Hi-Tension News provides a detailed description of the advanced surge test facilities and procedures in daily operation at the OB High Voltage Laboratory in Barberton, Ohio. Technical competences achieved in this laboratory contribute to the essential factors of design confirmation to basic studies of ehv insulation systems, conductor and hardware performance, and optimum tower construction. Known throughout the industry for authenticity of its full scale, all weather outdoor testing, OB's High Voltage Laboratory is a full-fledged participant in the NEMA-sponsored program to make testing facilities available on a cooperative basis.

High voltage electrical injuries.

PubMed

Kaloudová, Y; Sín, R; Rihová, H; Brychta, R; Suchánek, I; Martincová, A

2006-01-01

Between 1999 and 2005, a total of 41 patients were hospitalized at the Burn Centre of Brno University Hospital with high voltage electrical injuries, representing 6.06% of the total number of patients treated at the Burn Intensive Care Unit (ICU) for extensive burn trauma. The average age of patients with serious electrotraumas was 27.29 years. The youngest patient was 9 years old, the oldest 64 years. Lethality amounted to 17.07% of the total number of patients. The article clearly shows the sinister dimension (a frighteningly high number of cases) of high voltage electrical injuries suffered outside work context in the vicinity of railway tracks and affecting in particular the youngest age groups--children.

Mechanism of Small Current Generation under Impulse Voltage Applications in Vacuum

NASA Astrophysics Data System (ADS)

Aoki, Keita; Yasukawa, Hideaki; Kojima, Hiroki; Homma, Mitsutaka; Shioiri, Tetsu; Okubo, Hitoshi

Small discharge not to accompany breakdown can occur under high electric field in vacuum, however the mechanism is not well clarified. We have found that the current of small discharge decreases with repeated voltage applications, and leads to electrode conditioning effect of raising withstand voltage. The inception of the current is delayed with the decrease of current, and the inception time and waveform change by gap length. On the other hand, under low vacuum condition, the current increases and reaches saturation with repeated voltage applications. From these discussions, we concluded that the generating process of small current depended on the adsorption and absorption gas of electrodes.

Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode

NASA Astrophysics Data System (ADS)

Wang, Fangzhou; Chen, Wanjun; Wang, Zeheng; Sun, Ruize; Wei, Jin; Li, Xuan; Shi, Yijun; Jin, Xiaosheng; Xu, Xiaorui; Chen, Nan; Zhou, Qi; Zhang, Bo

2017-05-01

To achieve uniform low turn-on voltage and high reverse blocking capability, an AlGaN/GaN power field effect rectifier with trench heterojunction anode (THA-FER) is proposed and investigated in this work which includes only simulated data and no real experimental result. VT has a low saturation value when trench height (HT) is beyond 300 nm, confirming it is possible to control the VT accurately without precisely controlling the HT in the THA-FER. Meanwhile, high HT anode reduces reverse leakage current and yields high breakdown voltage (VB). A superior high Baliga's Figure of Merits (BFOM = VB2/Ron,sp, Ron,sp is specific-on resistance) of 1228 MW/cm2 reveals the THA-FER caters for the demands of high efficiency GaN power applications.

Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devices

NASA Technical Reports Server (NTRS)

Berning, D.

1981-01-01

Circuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.

From organized high throughput data to phenomenological theory: The example of dielectric breakdown

NASA Astrophysics Data System (ADS)

Kim, Chiho; Pilania, Ghanshyam; Ramprasad, Rampi

Understanding the behavior (and failure) of dielectric insulators experiencing extreme electric fields is critical to the operation of present and emerging electrical and electronic devices. Despite its importance, the development of a predictive theory of dielectric breakdown has remained a challenge, owing to the complex multiscale nature of this process. Here, we focus on the intrinsic dielectric breakdown field of insulators--the theoretical limit of breakdown determined purely by the chemistry of the material, i.e., the elements the material is composed of, the atomic-level structure, and the bonding. Starting from a benchmark dataset (generated from laborious first principles computations) of the intrinsic dielectric breakdown field of a variety of model insulators, simple predictive phenomenological models of dielectric breakdown are distilled using advanced statistical or machine learning schemes, revealing key correlations and analytical relationships between the breakdown field and easily accessible material properties. The models are shown to be general, and can hence guide the screening and systematic identification of high electric field tolerant materials.

30 CFR 77.800 - High-voltage circuits; circuit breakers.

Code of Federal Regulations, 2010 CFR

2010-07-01

... devices to provide protection against under voltage, grounded phase, short circuit and overcurrent. High... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High...

A universal theory for gas breakdown from microscale to the classical Paschen law

NASA Astrophysics Data System (ADS)

Loveless, Amanda M.; Garner, Allen L.

2017-11-01

While well established for larger gaps, Paschen's law (PL) fails to accurately predict breakdown for microscale gaps, where field emission becomes important. This deviation from PL is characterized by the absence of a minimum breakdown voltage as a function of the product of pressure and gap distance, which has been demonstrated analytically for microscale and smaller gaps with no secondary emission at atmospheric pressure [A. M. Loveless and A. L. Garner, IEEE Trans. Plasma Sci. 45, 574-583 (2017)]. We extend these previous results by deriving analytic expressions that incorporate the nonzero secondary emission coefficient, γS E, that are valid for gap distances larger than those at which quantum effects become important (˜100 nm) while remaining below those at which streamers arise. We demonstrate the validity of this model by benchmarking to particle-in-cell simulations with γSE = 0 and comparing numerical results to an experiment with argon, while additionally predicting a minimum voltage that was masked by fixing the gap pressure in previous analyses. Incorporating γSE demonstrates the smooth transition from field emission dominated breakdown to the classical PL once the combination of electric field, pressure, and gap distance satisfies the conventional criterion for the Townsend avalanche; however, such a condition generally requires supra-atmospheric pressures for breakdown at the microscale. Therefore, this study provides a single universal breakdown theory for any gas at any pressure dominated by field emission or Townsend avalanche to guide engineers in avoiding breakdown when designing microscale and larger devices, or inducing breakdown for generating microplasmas.

Electrical safety for high voltage arrays

NASA Technical Reports Server (NTRS)

Marshall, N. A.

1983-01-01

A number of key electrical safety requirements for the high voltage arrays of central station photovoltaic power systems are explored. The suitability of representative industrial DC power switchgear for control and fault protection was evaluated. Included were AC/DC circuit breakers, electromechanical contactors and relays, load interruptors, cold disconnect devices, sectionalizing switches, and high voltage DC fuses. As appropriate, steady state and transient characteristics were analyzed. Failure modes impacting upon operation and maintenance safety were also identified, as were the voltage withstand and current interruption levels.

Kinetic Modeling of RF Breakdown in High-Pressure Gas-filled Cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tollestrup, A. V.; Yonehara, K.; Byrd, J. M.

2012-05-01

Recent studies have shown that high gradients can be achieved quickly in high-pressure gas-filled cavities without the need for long conditioning times, because the dense gas can dramatically reduce dark currents and multipacting. In this proj ect we use this high pressure technique to suppress effects of residual vacuum and geometry found in evacuated cavities to isolate and study the role of the metallic surfaces in RF cavity breakdown as a function of radiofrequency and surface preparation. A series of experiments at 805 MHz using hydrogen fill pressures up to 0.01 g/cm3 of H2 have demonstrated high electric field gradientsmore » and scaling with the DC Paschen law limit, up to ~30 MV/m, depending on the choice of electrode material. For higher fi eld stresses, the breakdown characteristics deviate from the Paschen law scaling. Fully-kinetic 0D collisional particle-in-cell (PIC) simulations give breakdown characteristics in H2 and H2/SF6 mixtures in good agreement with the 805 MHz experimental resu lts below this field stress threshold. The impact of these results on gas-filled RF accelerating cavity design will be discussed.« less

E-beam high voltage switching power supply

DOEpatents

Shimer, D.W.; Lange, A.C.

1996-10-15

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

E-beam high voltage switching power supply

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1996-01-01

A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

30 CFR 75.833 - Handling high-voltage trailing cables.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Handling high-voltage trailing cables. 75.833... High-Voltage Longwalls § 75.833 Handling high-voltage trailing cables. (a) Cable handling. (1) Miners must not handle energized trailing cables unless they are wearing high-voltage insulating gloves, which...

Penning Effects in High-Pressure Discharge of the Plasma Display Panel

NASA Astrophysics Data System (ADS)

Kim, S. S.; Choi, E. H.; Uhm, H. S.

2001-10-01

The plasma display panel is operated with high-pressure gas, for which the breakdown voltage reduction may be accomplished by mixing a small amount of xenon with neon gas. The UV light emitted from xenon discharge plasma is converted into fluorescent light, providing TV images. A recent theoretical calculation indicates that the breakdown voltage is significantly reduced for the mixed gas due to collisional frequency decrease. It is easy to ionize xenon atoms with low ionization energy. The electrons can also easily get their kinetic energy in neon gas mixed with xenon atoms, thereby reducing their collisional cross section and ionizing xenon atoms. However, previous study indicates that the breakdown voltage can be further reduced by the Penning effects, which has been mostly studied in a low pressure discharge. Influence of the Penning effects on the high-pressure discharge in a neon-xenon mixed gas is investigated in connection with applications to the plasma display panel. A theoretical model for high-pressure discharge is developed. It is shown that the breakdown voltage is reduced by 20 percent at the xenon mole fraction of 0.015, which agree remarkably well with experimental data.

New developments in the field of high voltage and extra-high voltage cables

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jocteur, R.

1990-04-01

In this paper, the author presents the developments in progress at the present time in France concerning the high voltage (HV) and extra-high voltage (EHV) cables with synthetic insulation and their accessories up to the 500 kV range. The authors have adopted a maximum operating field strength approaching 16 kV/mm (405 V/mil) for low density polyethylene (LDPE) insulated cables. The on-going studies should allow to bring the maximum operating field strength for crosslinked polyethylene (XLPE) insulation from 7 to 10 kV/mm (180 to 255 V/mil) and cables could be manufactured more economically with this material.

Investigation of breakdown processes in automotive HID lamps

NASA Astrophysics Data System (ADS)

Bergner, Andre; Hoebing, Thomas; Ruhrmann, Cornelia; Mentel, Juergen; Awakowicz, Peter

2011-10-01

HID lamps are used for applications where high lumen output levels are required. Car headlights are a special field of HID lamp application. For security reasons and lawful regulations these lamps have to have a fast run-up phase and the possibility of hot re-strike. Therefore the background gas pressure amounts to 1.5 MPa xenon. But this high background gas pressure has the disadvantage that the ignition voltage becomes quite high due to Paschen's law. For that reason this paper deals with the investigation of the breakdown process of HID lamps for automotive application. The ignition is investigated by electrical as well as optical methods. Ignition voltage and current are measured on a nanosecond time scale and correlated with simultaneous phase resolved high speed photography done by an ICCD camera. So the ignition process can be observed from the first light emission until to the formation of whole discharge channel. The authors gratefully acknowledge the financial support by BMBF within the European project 'SEEL - Solutions for Energy Efficient Lighting' (FKZ: 13N11265). Furthermore the author would like to thank Philips Lighting (Aachen) for valuable discussions.

Compact high voltage solid state switch

DOEpatents

Glidden, Steven C.

2003-09-23

A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

30 CFR 75.804 - Underground high-voltage cables.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance grounded systems shall be equipped with metallic shields around each power conductor with one or more...

30 CFR 75.804 - Underground high-voltage cables.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance grounded systems shall be equipped with metallic shields around each power conductor with one or more...

30 CFR 75.804 - Underground high-voltage cables.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance grounded systems shall be equipped with metallic shields around each power conductor with one or more...

High voltage testing for the Majorana Demonstrator

DOE PAGES

Abgrall, N.; Arnquist, I. J.; Avignone, III, F. T.; ...

2016-04-04

The Majorana Collaboration is constructing the Majorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the Majorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of themore » high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during the Majorana Demonstrator commissioning phase were studied. Furthermore, a stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.« less

High voltage testing for the Majorana Demonstrator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abgrall, N.; Arnquist, Isaac J.; Avignone, F. T.

2016-07-01

The Majorana Collaboration is constructing theMajorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of theMajorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path,more » including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during theMajorana Demonstrator commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.« less

30 CFR 75.800 - High-voltage circuits; circuit breakers.

Code of Federal Regulations, 2010 CFR

2010-07-01

... shall be equipped with devices to provide protection against under-voltage grounded phase, short circuit... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 75.800... § 75.800 High-voltage circuits; circuit breakers. [Statutory Provisions] High-voltage circuits entering...

HIGH VOLTAGE ION SOURCE

DOEpatents

Luce, J.S.

1960-04-19

A device is described for providing a source of molecular ions having a large output current and with an accelerated energy of the order of 600 kv. Ions are produced in an ion source which is provided with a water-cooled source grid of metal to effect maximum recombination of atomic ions to molecular ions. A very high accelerating voltage is applied to withdraw and accelerate the molecular ions from the source, and means are provided for dumping the excess electrons at the lowest possible potentials. An accelerating grid is placed adjacent to the source grid and a slotted, grounded accelerating electrode is placed adjacent to the accelerating grid. A potential of about 35 kv is maintained between the source grid and accelerating grid, and a potential of about 600 kv is maintained between the accelerating grid and accelerating electrode. In order to keep at a minimum the large number of oscillating electrons which are created when such high voltages are employed in the vicinity of a strong magnetic field, a plurality of high voltage cascaded shields are employed with a conventional electron dumping system being employed between each shield so as to dump the electrons at the lowest possible potential rather than at 600 kv.

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

NASA Astrophysics Data System (ADS)

Cao, Y.; Chu, R.; Li, R.; Chen, M.; Chang, R.; Hughes, B.

2016-02-01

Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

Development and Breakdown of Goertler Vortices in High Speed Boundary Layers

NASA Technical Reports Server (NTRS)

Li, Fei; Choudhari, Meelan; Chang, Chau-Lyan; Wu, Minwei; Greene, Ptrick T.

2010-01-01

The nonlinear development of G rtler instability over a concave surface gives rise to a highly distorted stationary flow in the boundary layer that has strong velocity gradients in both spanwise and wall-normal directions. This distorted flow is susceptible to strong, high frequency secondary instability that leads to the onset of transition. For high Mach number flows, the boundary layer is also subject to the second mode instability. The nonlinear development of G rtler vortices and the ensuing growth and breakdown of secondary instability, the G rtler vortex interactions with second mode instabilities as well as oblique second mode interactions are examined in the context of both internal and external hypersonic configurations using nonlinear parabolized stability equations, 2-D eigenvalue analysis and direct numerical simulation. For G rtler vortex development inside the Purdue Mach 6 Ludwieg tube wind tunnel, multiple families of unstable secondary eigenmodes are identified and their linear and nonlinear evolution is examined. The computation of secondary instability is continued past the onset of transition to elucidate the physical mechanisms underlying the laminar breakdown process. Nonlinear breakdown scenarios associated with transition over a Mach 6 compression cone configuration are also explored.

High Voltage Seismic Generator

NASA Astrophysics Data System (ADS)

Bogacz, Adrian; Pala, Damian; Knafel, Marcin

2015-04-01

This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

Programmable high-output-impedance, large-voltage compliance, microstimulator for low-voltage biomedical applications.

PubMed

Farahmand, Sina; Maghami, Mohammad Hossein; Sodagar, Amir M

2012-01-01

This paper reports on the design of a programmable, high output impedance, large voltage compliance microstimulator for low-voltage biomedical applications. A 6-bit binary-weighted digital to analog converter (DAC) is used to generate biphasic stimulus current pulses. A compact current mirror with large output voltage compliance and high output resistance conveys the current pulses to the target tissue. Designed and simulated in a standard 0.18µm CMOS process, the microstimulator circuit is capable of delivering a maximum stimulation current of 160µA to a 10-kΩ resistive load. Operated at a 1.8-V supply voltage, the output stage exhibits a voltage compliance of 1.69V and output resistance of 160MΩ at full scale stimulus current. Layout of the core microelectrode circuit measures 25.5µm×31.5µm.

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawarada, H., E-mail: kawarada@waseda.jp; Institute of Nano-Science and Nano-Engineering, Waseda University, Shinjuku, Tokyo 169-8555; Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Shinjuku, Tokyo 169-0051

2014-07-07

By forming a highly stable Al{sub 2}O{sub 3} gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400 °C (673 K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (V{sub B}) of the MOSFET without a field plate is 600 V at a gate-drain distance (L{sub GD}) of 7 μm. We fabricated some MOSFETs for which V{sub B}/L{sub GD} > 100 V/μm. These values are comparable to those of lateral SiC or GaN FETs. The Al{sub 2}O{sub 3} was deposited on the C-Hmore » surface by atomic layer deposition (ALD) at 450 °C using H{sub 2}O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400 °C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400 °C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.« less

Physicochemical assessment criteria for high-voltage pulse capacitors

NASA Astrophysics Data System (ADS)

Darian, L. A.; Lam, L. Kh.

2016-12-01

In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

Physicochemical assessment criteria for high-voltage pulse capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darian, L. A., E-mail: LDarian@rambler.ru; Lam, L. Kh.

In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is amore » correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.« less

High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Fazi, Christian

1996-01-01

We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates

NASA Astrophysics Data System (ADS)

Seok, Ogyun; Kim, Hyoung Woo; Moon, Jeong Hyun; Lee, Hyun-Su; Bahng, Wook

2018-06-01

Lateral double-implanted MOSFETs (LDIMOSFETs) fabricated on on-axis high-purity semi-insulating (HPSI) 4H-SiC substrates with gate field plates have been demonstrated for the enhancement of reverse blocking capability. The effects of gate field plate on LDIMOSFET were analyzed by simulation and experimental methods. The electric field concentration at the gate edge was successfully suppressed by a gate field plate. A high breakdown voltage of 934 V and a figure of merit of 14.6 MW/cm2 were achieved at L FP of 2 µm and L drift of 15 µm, while those of the conventional device without a gate field plate were 744 V and 13.3 MW/cm2, respectively. Also, the fabricated device shows stable blocking characteristics at a high temperature of 250 °C. The drain leakage was increased by only 22% at 250 °C compared with that at room temperature.

Multijunction high voltage concentrator solar cells

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C.; Chai, A.-T.

1981-01-01

The standard integrated circuit technology has been developed to design and fabricate new innovative planar multi-junction solar cell chips for concentrated sunlight applications. This 1 cm x 1 cm cell consisted of several voltage generating regions called unit cells which were internally connected in series within a single chip resulting in high open circuit voltages. Typical open-circuit voltages of 3.6 V and short-circuit currents of 90 ma were obtained at 80 AM1 suns. A dramatic increase in both short circuit current and open circuit voltage with increased light levels was observed.

Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime

DOE PAGES

Tierney, Brian D.; Choi, Sukwon; DasGupta, Sandeepan; ...

2017-08-16

A distributed impedance “field cage” structure is proposed and evaluated for electric field control in GaN-based, lateral high electron mobility transistors (HEMTs) operating as kilovolt-range power devices. In this structure, a resistive voltage divider is used to control the electric field throughout the active region. The structure complements earlier proposals utilizing floating field plates that did not employ resistively connected elements. Transient results, not previously reported for field plate schemes using either floating or resistively connected field plates, are presented for ramps of dV ds /dt = 100 V/ns. For both DC and transient results, the voltage between the gatemore » and drain is laterally distributed, ensuring the electric field profile between the gate and drain remains below the critical breakdown field as the source-to-drain voltage is increased. Our scheme indicates promise for achieving breakdown voltage scalability to a few kV.« less

Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tierney, Brian D.; Choi, Sukwon; DasGupta, Sandeepan

A distributed impedance “field cage” structure is proposed and evaluated for electric field control in GaN-based, lateral high electron mobility transistors (HEMTs) operating as kilovolt-range power devices. In this structure, a resistive voltage divider is used to control the electric field throughout the active region. The structure complements earlier proposals utilizing floating field plates that did not employ resistively connected elements. Transient results, not previously reported for field plate schemes using either floating or resistively connected field plates, are presented for ramps of dV ds /dt = 100 V/ns. For both DC and transient results, the voltage between the gatemore » and drain is laterally distributed, ensuring the electric field profile between the gate and drain remains below the critical breakdown field as the source-to-drain voltage is increased. Our scheme indicates promise for achieving breakdown voltage scalability to a few kV.« less

Detecting Faults In High-Voltage Transformers

NASA Technical Reports Server (NTRS)

Blow, Raymond K.

1988-01-01

Simple fixture quickly shows whether high-voltage transformer has excessive voids in dielectric materials and whether high-voltage lead wires too close to transformer case. Fixture is "go/no-go" indicator; corona appears if transformer contains such faults. Nests in wire mesh supported by cap of clear epoxy. If transformer has defects, blue glow of corona appears in mesh and is seen through cap.

Time-Domain Finite Element Analysis of Nonlinear Breakdown Problems in High-Power-Microwave Devices and Systems

DTIC Science & Technology

2015-12-24

simulation of the electromagnetic- plasma interaction and the high-power microwave breakdown in air. Under the high pressure and high frequency condition of...the high-power air breakdown, the physical phenomenon is described using a nonlinearly coupled full-wave Maxwell and fluid plasma system. This...Challenges ........................................................................... 3 3.1.1 Plasma Fluid Model

Characterization of Wet Air Plasma Jet Powered by Sinusoidal High Voltage and Nanosecond Pulses for Plasma Agricultural Application

NASA Astrophysics Data System (ADS)

Takashima, Keisuke; Shimada, Keisuke; Konishi, Hideaki; Kaneko, Toshiro

2015-09-01

Not only for the plasma sterilization but also for many of plasma life-science applications, atmospheric pressure plasma devices that allowed us to control its state and reactive species production are deserved to resolve the roles of the chemical species. Influence of the hydroxyl radical and ozone on germination of conidia of a strawberry pathogen is presented. Water addition to air plasma jet significantly improves germination suppression performance, while measured reactive oxygen species (ROS) are reduced. Although the results show a negative correlation between ROS and the germination suppression, this infers the importance of chemical composition generated by plasma. For further control of the plasma product, a plasma jet powered by sinusoidal high voltage and nanosecond pulses is developed and characterized with the voltage-charge Lissajous. Control of breakdown phase and discharge power by pulse-imposed phase is presented. This work is supported by JSPS KAKENHI Grant-in-Aid for Young Scientists (B) Grant Number 15K17480 and Exploratory Research Grant Number 23644199.

Statistical Studies of the Electric Breakdown in Nitrogen in the Duration Range of 3 ms-60 min

NASA Astrophysics Data System (ADS)

Gorokhov, V. V.; Karelin, V. I.; Perminov, A. V.; Repin, P. B.

2018-05-01

The statistical characteristics of an electric breakdown in the nitrogen in the spike (cathode)-plane gap in the duration range of (3 × 10-3)-3600 s at voltages close to a static breakdown have been studied. It has been found that a probability of a gap breakdown is nonmonotonously distributed over time. The presence of maxima in the probability distribution confirms a contribution of some processes that both stimulate and suppress a breakdown. The typical times of the processes are 30 ms, 10-1 s, and 300 s.

Spacecraft high-voltage power supply construction

NASA Technical Reports Server (NTRS)

Sutton, J. F.; Stern, J. E.

1975-01-01

The design techniques, circuit components, fabrication techniques, and past experience used in successful high-voltage power supplies for spacecraft flight systems are described. A discussion of the basic physics of electrical discharges in gases is included and a design rationale for the prevention of electrical discharges is provided. Also included are typical examples of proven spacecraft high-voltage power supplies with typical specifications for design, fabrication, and testing.

Electro-optic high voltage sensor

DOEpatents

Davidson, James R.; Seifert, Gary D.

2003-09-16

A small sized electro-optic voltage sensor capable of accurate measurement of high voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation. A polarization beam displacer separates the input beam into two beams with orthogonal linear polarizations and causes one linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels effect elliptically polarizes the beam as it travels through the crystal. A reflector redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization. The system may include a detector for converting the output beams into electrical signals and a signal processor for determining the voltage based on an analysis of the output beams.

High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

DOEpatents

Shimer, D.W.; Lange, A.C.

1995-05-23

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1995-01-01

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

High voltage pulse generator. [Patent application

DOEpatents

Fasching, G.E.

1975-06-12

An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

Novel dielectric reduces corona breakdown in ac capacitors

NASA Technical Reports Server (NTRS)

Loehner, J. L.

1972-01-01

Dielectric system was developed which consists of two layers of 25-gage paper separated by one layer of 50-gage polypropylene to reduce corona breakdown in ac capacitors. System can be used in any alternating current application where constant voltage does not exceed 400 V rms. With a little research it could probably be increased to 700 to 800 V rms.

Experimental and analytical study of the DC breakdown characteristics of polypropylene laminated paper with a butt gap condition considering the insulation design of superconducting cable

NASA Astrophysics Data System (ADS)

Seo, In-jin; Choi, Won; Seong, Jae-gyu; Lee, Bang-wook; Koo, Ja-yoon

2014-08-01

It has been reported that the insulation design under DC stress is considered as one of the critical factors in determining the performance of high-voltage direct current (HVDC) superconducting cable. Therefore, it is fundamentally necessary to investigate the DC breakdown characteristics of the composite insulation system consisting of liquid nitrogen (LN2)/polypropylene-laminated-paper (PPLP). In particular, the insulation characteristics under DC polarity reversal condition should be verified to understand the polarity effect of the DC voltage considering the unexpected incidents taking place at line-commutated-converters (LCC) under service at a DC power grid. In this study, to examine the variation of DC electric field strength, the step voltage and polarity reversal breakdown tests are performed under DC stress. Also, we investigate the electric field distributions in a butt gap of the LN2/PPLP condition considering the DC polarity reversal by using simulation software.

Method of making high breakdown voltage semiconductor device

DOEpatents

Arthur, Stephen D.; Temple, Victor A. K.

1990-01-01

A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.

30 CFR 75.807 - Installation of high-voltage transmission cables.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Installation of high-voltage transmission...-Voltage Distribution § 75.807 Installation of high-voltage transmission cables. [Statutory Provisions] All underground high-voltage transmission cables shall be installed only in regularly inspected air courses and...

Reduction of Electric Breakdown Voltage in LC Switching Shutters / Elektriskās Caursites Sprieguma Samazināšana Šķidro Kristālu Šūnās

NASA Astrophysics Data System (ADS)

Mozolevskis, G.; Ozols, A.; Nitiss, E.; Linina, E.; Tokmakov, A.; Rutkis, M.

2015-10-01

Liquid crystal display (LCD) industry is among the most rapidly growing and innovating industries in the world. Here continuously much effort is devoted towards developing and implementing new types of LCDs for various applications. Some types of LCDs require relatively high voltages for their operation. For example, bistable displays, in which an altering field at different frequencies is used for switching from clear to scattering states and vice versa, require electric fields at around 10 V/μm for operation. When operated at such high voltages an electrical breakdown is very likely to occur in the liquid crystal (LC) cell. This has been one of the limiting factors for such displays to reach market. In the present paper, we will report on the results of electrical breakdown investigations in high-voltage LC cells. An electrical breakdown in the cell is observed when current in the liquid crystal layer is above a specific threshold value. The threshold current is determined by conductivity of the liquid crystal as well as point defects, such as dust particles in LC layer, pinholes in coatings and electrode hillocks. In order to reduce the currents flowing through the liquid crystal layer several approaches, such as electrode patterning and adding of various buffer layers in the series with LC layer, have been tested. We demonstrate that the breakdown voltages can be significantly improved by means of adding insulating thin films. Šķidro kristālu ekrānu (LCD) industrija ir viena no visstraujāk augošajām industrijām pasaulē. Daudz pūļu un resursu tiek veltīti jauna tipa LCD izstrādē dažādiem pielietojumiem. Atsevišķa tipa LCD funkcionēšanai nepieciešami augsti spriegumi. Piemēram, bistabilos LCD, kuros izkliedējošs (ieslēgts) un dzidrs (izslēgts) stāvoklis tiek iegūts ar dažādu frekvenču maiņsprieguma palīdzību, elektriskā lauka intensitāte šķidrā kristāla slānī var sasniegt pat 10 V/μm. Augstās elektriskā lauka intensit

High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

NASA Technical Reports Server (NTRS)

Nussberger, A. A.; Woodcock, G. R.

1980-01-01

SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

Investigating the effective range of vacuum ultraviolet-mediated breakdown in high-power microwave metamaterials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Chien-Hao, E-mail: cliu82@wisc.edu; Neher, Joel D., E-mail: jdneher@wisc.edu; Booske, John H., E-mail: booske@engr.wisc.edu

2014-10-14

Metamaterials and periodic structures operating under high-power excitations are susceptible to breakdown. It was recently demonstrated that a localized breakdown created in a given region of a periodic structure can facilitate breakdown in other regions of the structure where the intensity of the incident electromagnetic fields may not be high enough to cause breakdown under normal circumstances. It was also demonstrated that this phenomenon is due to the generation of vacuum ultraviolet radiation at the location of the initial discharge, which propagates to the neighboring regions (e.g., other unit cells in a periodic structure) and facilitates the generation of amore » discharge at a lower incident power level. In this paper, we present the results of an experimental study conducted to determine the effective range of this physical phenomenon for periodic structures that operate in air and in pure nitrogen gas at atmospheric pressure levels. It is demonstrated that when breakdown is induced in a periodic structure using a high-power pulse with a frequency of 9.382 GHz, duration of 0.8 μs, and peak power level of 25 kW, this phenomenon is highly likely to happen in radii of approximately 16–17 mm from the location of the initial discharge under these test conditions. The results of this study are significant in designing metamaterials and periodic structures for high-power microwave applications as they suggest that a localized discharge created in such a periodic structure with a periodicity less than 16–17 mm can spread over a large surface and result in a distributed discharge.« less

30 CFR 75.810 - High-voltage trailing cables; splices.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; splices. 75.810... § 75.810 High-voltage trailing cables; splices. [Statutory Provisions] In the case of high-voltage cables used as trailing cables, temporary splices shall not be used and all permanent splices shall be...

Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Atanassova, E.; Stojadinović, N.; Spassov, D.; Manić, I.; Paskaleva, A.

2013-05-01

The time-dependent dielectric breakdown (TDDB) characteristics of 7 nm pure and lightly Al-doped Ta2O5 (equivalent oxide thickness of 2.2 and 1.5 nm, respectively) with W gate electrodes in MOS capacitor configuration are studied using gate injection and constant voltage stress. The effect of both the process-induced defects and the dopant on the breakdown distribution, and on the extracted Weibull slope values, are discussed. The pre-existing traps which provoke weak spots dictate early breakdowns. Their effect is compounded of both the stress-induced new traps generation (percolation model is valid) and the inevitable lower-k interface layer in the region with long time-to-breakdown. The domination of one of these competitive effects defines the mechanism of degradation: the trapping at pre-existing traps appears to dominate in Ta2O5; Al doping reduces defects in Ta2O5, the generation of new traps prevails over the charge trapping in the doped samples, and the mechanism of breakdown is more adequate to the percolation concept. The doping of high-k Ta2O5 even with small amount (5 at.%) may serve as an engineering solution for improving its TDDB characteristics and reliability.

Comparative assessment of the breakdown of high-molecular flocculants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baichenko, A.A.; Baichenko, A.A.; Kaminskii, V.S.

1977-01-01

In recent years, a much wider range of water-soluble polymer flocculants has come into use to accelerate the clarification of coal and clay-coal suspensions, in which the solid phase comprises flotation tailings or slurry. The major distinguishing feature in this development has been the switch from gel-type flocculants to granular or powder types. Difficulties arise in the use of flocculants, from the relative ease with which they break down during storage or solution preparation. Different polymers behave differently under the same mechanical or chemical forces. Failure to appreciate this often leads to erroneous conclusions regarding the specific effectiveness of variousmore » flocculants. Breakdown data are described on various high-molecular flocculants, showing that the major factors that influence the breakdown of polyoxyethylene (POE) can be traced in other polymer flocculants as well.« less

E-beam high voltage switching power supply

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1997-01-01

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

E-beam high voltage switching power supply

DOEpatents

Shimer, D.W.; Lange, A.C.

1997-03-11

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360{degree}/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs.

Boeing's High Voltage Solar Tile Test Results

NASA Astrophysics Data System (ADS)

Reed, Brian J.; Harden, David E.; Ferguson, Dale C.; Snyder, David B.

2002-10-01

Real concerns of spacecraft charging and experience with solar array augmented electrostatic discharge arcs on spacecraft have minimized the use of high voltages on large solar arrays despite numerous vehicle system mass and efficiency advantages. Boeing's solar tile (patent pending) allows high voltage to be generated at the array without the mass and efficiency losses of electronic conversion. Direct drive electric propulsion and higher power payloads (lower spacecraft weight) will benefit from this design. As future power demand grows, spacecraft designers must use higher voltage to minimize transmission loss and power cable mass for very large area arrays. This paper will describe the design and discuss the successful test of Boeing's 500-Volt Solar Tile in NASA Glenn's Tenney chamber in the Space Plasma Interaction Facility. The work was sponsored by NASA's Space Solar Power Exploratory Research and Technology (SERT) Program and will result in updated high voltage solar array design guidelines being published.

Boeing's High Voltage Solar Tile Test Results

NASA Technical Reports Server (NTRS)

Reed, Brian J.; Harden, David E.; Ferguson, Dale C.; Snyder, David B.

2002-01-01

Real concerns of spacecraft charging and experience with solar array augmented electrostatic discharge arcs on spacecraft have minimized the use of high voltages on large solar arrays despite numerous vehicle system mass and efficiency advantages. Boeing's solar tile (patent pending) allows high voltage to be generated at the array without the mass and efficiency losses of electronic conversion. Direct drive electric propulsion and higher power payloads (lower spacecraft weight) will benefit from this design. As future power demand grows, spacecraft designers must use higher voltage to minimize transmission loss and power cable mass for very large area arrays. This paper will describe the design and discuss the successful test of Boeing's 500-Volt Solar Tile in NASA Glenn's Tenney chamber in the Space Plasma Interaction Facility. The work was sponsored by NASA's Space Solar Power Exploratory Research and Technology (SERT) Program and will result in updated high voltage solar array design guidelines being published.

Conceptual definition of a high voltage power supply test facility

NASA Technical Reports Server (NTRS)

Biess, John J.; Chu, Teh-Ming; Stevens, N. John

1989-01-01

NASA Lewis Research Center is presently developing a 60 GHz traveling wave tube for satellite cross-link communications. The operating voltage for this new tube is - 20 kV. There is concern about the high voltage insulation system and NASA is planning a space station high voltage experiment that will demonstrate both the 60 GHz communications and high voltage electronics technology. The experiment interfaces, requirements, conceptual design, technology issues and safety issues are determined. A block diagram of the high voltage power supply test facility was generated. It includes the high voltage power supply, the 60 GHz traveling wave tube, the communications package, the antenna package, a high voltage diagnostics package and a command and data processor system. The interfaces with the space station and the attached payload accommodations equipment were determined. A brief description of the different subsystems and a discussion of the technology development needs are presented.

30 CFR 75.811 - High-voltage underground equipment; grounding.

Code of Federal Regulations, 2010 CFR

2010-07-01

...-voltage equipment supplying power to such equipment receiving power from resistance grounded systems shall... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage underground equipment; grounding... COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage...

Safety of High Speed Guided Ground Transportation Systems: Work Breakdown Structure

DOT National Transportation Integrated Search

1994-11-30

This report provides a systems approach to the assessment, evaluation and application of high-speed guided ground transportation (HSGGT) safety criteria and : presents one potential methodology by combining a work breakdown structure (WBS) : approach...

An LOD with improved breakdown voltage in full-frame CCD devices

NASA Astrophysics Data System (ADS)

Banghart, Edmund K.; Stevens, Eric G.; Doan, Hung Q.; Shepherd, John P.; Meisenzahl, Eric J.

2005-02-01

In full-frame image sensors, lateral overflow drain (LOD) structures are typically formed along the vertical CCD shift registers to provide a means for preventing charge blooming in the imager pixels. In a conventional LOD structure, the n-type LOD implant is made through the thin gate dielectric stack in the device active area and adjacent to the thick field oxidation that isolates the vertical CCD columns of the imager. In this paper, a novel LOD structure is described in which the n-type LOD impurities are placed directly under the field oxidation and are, therefore, electrically isolated from the gate electrodes. By reducing the electrical fields that cause breakdown at the silicon surface, this new structure permits a larger amount of n-type impurities to be implanted for the purpose of increasing the LOD conductivity. As a consequence of the improved conductance, the LOD width can be significantly reduced, enabling the design of higher resolution imaging arrays without sacrificing charge capacity in the pixels. Numerical simulations with MEDICI of the LOD leakage current are presented that identify the breakdown mechanism, while three-dimensional solutions to Poisson's equation are used to determine the charge capacity as a function of pixel dimension.

High voltage photovoltaic power converter

DOEpatents

Haigh, Ronald E.; Wojtczuk, Steve; Jacobson, Gerard F.; Hagans, Karla G.

2001-01-01

An array of independently connected photovoltaic cells on a semi-insulating substrate contains reflective coatings between the cells to enhance efficiency. A uniform, flat top laser beam profile is illuminated upon the array to produce electrical current having high voltage. An essentially wireless system includes a laser energy source being fed through optic fiber and cast upon the photovoltaic cell array to prevent stray electrical signals prior to use of the current from the array. Direct bandgap, single crystal semiconductor materials, such as GaAs, are commonly used in the array. Useful applications of the system include locations where high voltages are provided to confined spaces such as in explosive detonation, accelerators, photo cathodes and medical appliances.

Switch contact device for interrupting high current, high voltage, AC and DC circuits

DOEpatents

Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

2005-01-04

A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

Analysis of copper contamination in transformer insulating material with nanosecond- and femtosecond-laser-induced breakdown spectroscopy

NASA Astrophysics Data System (ADS)

Aparna, N.; Vasa, N. J.; Sarathi, R.

2018-06-01

This work examines the oil-impregnated pressboard insulation of high-voltage power transformers, for the determination of copper contamination. Nanosecond- and femtosecond-laser-induced breakdown spectroscopy revealed atomic copper lines and molecular copper monoxide bands due to copper sulphide diffusion. X-ray diffraction studies also indicated the presence of CuO emission. Elemental and molecular mapping compared transformer insulating material ageing in different media—air, N2, He and vacuum.

Dielectric Breakdown Strength of Thermally Sprayed Ceramic Coatings: Effects of Different Test Arrangements

NASA Astrophysics Data System (ADS)

Niittymäki, Minna; Lahti, Kari; Suhonen, Tomi; Metsäjoki, Jarkko

2015-02-01

Dielectric properties (e.g., DC resistivity and dielectric breakdown strength) of insulating thermally sprayed ceramic coatings differ depending on the form of electrical stress, ambient conditions, and aging of the coating, however, the test arrangements may also have a remarkable effect on the properties. In this paper, the breakdown strength of high velocity oxygen fuel-sprayed alumina coating was studied using six different test arrangements at room conditions in order to study the effects of different test and electrode arrangements on the breakdown behavior. In general, it was shown that test arrangements have a considerable influence on the results. Based on the results, the recommended testing method is to use embedded electrodes between the voltage electrode and the coating at least in DC tests to ensure a good contact with the surface. With and without embedded electrodes, the DBS was 31.7 and 41.8 V/µm, respectively. Under AC excitation, a rather good contact with the sample surface is, anyhow, in most cases acquired by a rather high partial discharge activity and no embedded electrodes are necessarily needed (DBS 29.2 V/µm). However, immersion of the sample in oil should strongly be avoided because the oil penetrates quickly into the coating affecting the DBS (81.2 V/µm).

Mass analysis of neutral particles and ions released during electrical breakdowns on spacecraft surfaces

NASA Technical Reports Server (NTRS)

Kendall, B. R. F.

1983-01-01

A specialized spectrometer was designed and developed to measure the mass and velocity distributions of neutral particles (molecules and molecular clusters) released from metal-backed Teflon and Kapton films. Promising results were obtained with an insulation breakdown initiation system based on a moveable contact touching the insulated surfaces. A variable energy, high voltage pulse is applied to the contact. The resulting surface damage sites can be made similar in size and shape to those produced by a high voltage electron beam system operating at similar discharge energies. The point discharge apparatus was used for final development of several high speed recording systems and for measurements of the composition of the materials given off by the discharge. Results with this apparatus show evolution of large amounts of fluorocarbon fragments from discharge through Teflon FEP, while discharges through Kapton produce mainly very light hydrocarbon fragments at masses below about 80 a.m.u.

PV source based high voltage gain current fed converter

NASA Astrophysics Data System (ADS)

Saha, Soumya; Poddar, Sahityika; Chimonyo, Kudzai B.; Arunkumar, G.; Elangovan, D.

2017-11-01

This work involves designing and simulation of a PV source based high voltage gain, current fed converter. It deals with an isolated DC-DC converter which utilizes boost converter topology. The proposed converter is capable of high voltage gain and above all have very high efficiency levels as proved by the simulation results. The project intends to produce an output of 800 V dc from a 48 V dc input. The simulation results obtained from PSIM application interface were used to analyze the performance of the proposed converter. Transformer used in the circuit steps up the voltage as well as to provide electrical isolation between the low voltage and high voltage side. Since the converter involves high switching frequency of 100 kHz, ultrafast recovery diodes are employed in the circuitry. The major application of the project is for future modeling of solar powered electric hybrid cars.

Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors

NASA Astrophysics Data System (ADS)

Onose, Hidekatsu; Kobayashi, Yutaka; Onuki, Jin

2017-03-01

The effect of the p gate dose on the characteristics of the gate-source diode in SiC static induction transistors (SIT) was investigated. It was found that a dose of 1.5 × 1014 cm-2 yields a pn junction breakdown voltage higher than 60 V and good forward characteristics. A normally on SiC SIT was fabricated and demonstrated. A blocking voltage higher than 2.0 kV at a gate-source voltage of -50 V and on-resistance of 70 mΩ cm2 were obtained. Device simulations were performed to investigate the effect of the lateral spreading. By comparing the measured I-V curves with simulation results, the lateral spreading factor was estimated to be about 0.5. The lateral spreading detrimentally affected the electrical properties of the SIT made using implantations at energies higher than 1 MeV.

Review of adult electrical burn injury outcomes worldwide: An analysis of low- voltage versus high-voltage electrical injury

PubMed Central

Shih, Jessica G; Shahrokhi, Shahriar; Jeschke, Marc G

2016-01-01

Objective To review low-voltage versus high-voltage electrical burn complications in adults, and to identify novel areas that are not recognized to improve outcomes. Methods An extensive literature search on electrical burn injuries was performed using OVID Medline, PubMed and EMBASE databases from 1946–2015. Studies relating to outcomes of electrical injury in the adult population (≥18 years of age) were included in the study. Results Forty-one single-institution publications with a total of 5485 electrical injury patients were identified and included in the present study. 18.0% of these patients were low-voltage injuries (LVI), 38.3% high-voltage injuries (HVI) and 43.7% with voltage not otherwise specified (NOS). Forty-four percent of studies did not characterize outcomes according to low versus high-voltage injuries. Reported outcomes include surgical, medical, post-traumatic, and other (long-term/psychological/rehabilitative), all of which report greater incidence rates in HVI compared to LVI. Only two studies report on psychological outcomes such as post-traumatic stress disorder. Mortality from electrical injuries are 2.6% in LVI, 5.2% in HVI and 3.7% in NOS. Coroner’s reports reveal a ratio of 2.4:1 for deaths caused by low-voltage injury compared to high voltage-injury. Conclusions High-voltage injuries lead to greater morbidity and mortality than low-voltage injuries. However, the results of the coroner’s reports suggest that immediate mortality from low-voltage injury may be underestimated. Furthermore, based on the data of this analysis we conclude that the majority of studies report electrical injury outcomes, however, the majority of them do not analyze complications by low versus high voltage and often lack long-term psychological and rehabilitation outcomes post-electrical injury indicating that a variety of central aspects are not being evaluated or assessed. PMID:27359191

30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall be...

30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall be...

30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall be...

30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall be...

Analysis of magnesium and copper in aluminum alloys with high repetition rate laser-ablation spark-induced breakdown spectroscopy

NASA Astrophysics Data System (ADS)

He, Xiaoyong; Dong, Bo; Chen, Yuqi; Li, Runhua; Wang, Fujuan; Li, Jiaoyang; Cai, Zhigang

2018-03-01

In order to improve the analytical speed and performance of laser-ablation based atomic emission spectroscopy, high repetition rate laser-ablation spark-induced breakdown spectroscopy (HRR LA-SIBS) was first developed. Magnesium and copper in aluminum alloys were analyzed with this technique. In the experiments, the fundamental output of an acousto-optically Q-switched Nd:YAG laser operated at 1 kHz repetition rate with low pulse energy and 120 ns pulse width was used to ablate the samples and the plasma emission was enhanced by spark discharge. The spectra were recorded with a compact fiber spectrometer with non-intensified charge-coupled device in non-gating mode. Different parameters relative with analytical performance, such as capacitance, voltage, laser pulse energy were optimized. Under current experimental conditions, calibration curves of magnesium and copper in aluminum alloys were built and limits of detection of them were determined to be 14.0 and 9.9 ppm by HRR LA-SIBS, respectively, which were 8-12 folds better than that achieved by HRR LA under similar experimental condition without spark discharge. The analytical sensitivities are close to those obtained with conventional LIBS but with improved analytical speed as well as possibility of using compact fiber spectrometer. Under high repetition rate operation, the noise level can be decreased and the analytical reproducibility can be improved obviously by averaging multiple measurements within short time. High repetition rate operation of laser-ablation spark-induced breakdown spectroscopy is very helpful for improving analytical speed. It is possible to find applications in fast elements analysis, especially fast two-dimension elemental mapping of solid samples.

The high voltage homopolar generator

NASA Astrophysics Data System (ADS)

Price, J. H.; Gully, J. H.; Driga, M. D.

1986-11-01

System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

Evidence of Magnetic Breakdown on the Defects With Thermally Suppressed Critical Field in High Gradient SRF Cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eremeev, Grigory; Palczewski, Ari

2013-09-01

At SRF 2011 we presented the study of quenches in high gradient SRF cavities with dual mode excitation technique. The data differed from measurements done in 80's that indicated thermal breakdown nature of quenches in SRF cavities. In this contribution we present analysis of the data that indicates that our recent data for high gradient quenches is consistent with the magnetic breakdown on the defects with thermally suppressed critical field. From the parametric fits derived within the model we estimate the critical breakdown fields.

Low Power, High Voltage Power Supply with Fast Rise/Fall Time

NASA Technical Reports Server (NTRS)

Bearden, Douglas B. (Inventor)

2007-01-01

A low power, high voltage power supply system includes a high voltage power supply stage and a preregulator for programming the power supply stage so as to produce an output voltage which is a predetermined fraction of a desired voltage level. The power supply stage includes a high voltage, voltage doubler stage connected to receive the output voltage from the preregulator and for, when activated, providing amplification of the output voltage to the desired voltage level. A first feedback loop is connected between the output of the preregulator and an input of the preregulator while a second feedback loop is connected between the output of the power supply stage and the input of the preregulator.

Low power, high voltage power supply with fast rise/fall time

NASA Technical Reports Server (NTRS)

Bearden, Douglas B. (Inventor)

2007-01-01

A low power, high voltage power supply system includes a high voltage power supply stage and a preregulator for programming the power supply stage so as to produce an output voltage which is a predetermined fraction of a desired voltage level. The power supply stage includes a high voltage, voltage doubler stage connected to receive the output voltage from the preregulator and for, when activated, providing amplification of the output voltage to the desired voltage level. A first feedback loop is connected between the output of the preregulator and an input of the preregulator while a second feedback loop is connected between the output of the power supply stage and the input of the preregulator.

Very Low Frequency Breakdown Properties of Electrical Insulation Materials at Cryogenic Temperatures

NASA Astrophysics Data System (ADS)

Sauers, I.; Tuncer, E.; Polizos, G.; James, D. R.; Ellis, A. R.; Pace, M. O.

2010-04-01

For long cables or equipment with large capacitance it is not always possible to conduct high voltage withstand tests at 60 Hz due to limitations in charging currents of the power supply. Very low frequency (typically at a frequency of 0.1 Hz) has been used for conventional cables as a way of getting around the charging current limitation. For superconducting grid applications the same issues apply. However there is very little data at cryogenic temperatures on how materials perform at low frequency compared to 60 Hz and whether higher voltages should be applied when performing a high voltage acceptability test. Various materials including G10 (fiberglass reinforced plastic or FRP), Cryoflex™ (a tape insulation used in some high temperature superconducting cables), kapton (commonly used polyimide), polycarbonate, and polyetherimide, and in liquid nitrogen alone have been tested using a step method for frequencies of 60 Hz, 0.1 Hz, and dc. The dwell time at each step was chosen so that the aging factor would be the same in both the 60 Hz and 0.1 Hz tests. The data indicated that, while there is a small frequency dependence for liquid nitrogen, there are significant differences for the solid materials studied. Breakdown data for these materials and for model cables will be shown and discussed.

A high-voltage supply used on miniaturized RLG

NASA Astrophysics Data System (ADS)

Miao, Zhifei; Fan, Mingming; Wang, Yuepeng; Yin, Yan; Wang, Dongmei

2016-01-01

A high voltage power supply used in laser gyro is proposed in this paper. The power supply which uses a single DC 15v input and fly-back topology is adopted in the main circuit. The output of the power supply achieve high to 3.3kv voltage in order to light the RLG. The PFM control method is adopted to realize the rapid switching between the high voltage state and the maintain state. The resonant chip L6565 is used to achieve the zero voltage switching(ZVS), so the consumption is reduced and the power efficiency is improved more than 80%. A special circuit is presented in the control portion to ensure symmetry of the two RLG's arms current. The measured current accuracy is higher than 5‰ and the current symmetry of the two RLG's arms up to 99.2%.

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

Oxidatively stable fluorinated sulfone electrolytes for high voltage high energy lithium-ion batteries

DOE PAGES

Su, Chi -Cheung; He, Meinan; Redfern, Paul C.; ...

2017-03-16

New fluorinated sulfones were synthesized and evaluated in high voltage lithium-ion batteries using LiNi 0.5Mn 1.5O 4 (LNMO) cathode. Fluorinated sulfones with an α-trifluoromethyl group exhibit enhanced oxidation stability, reduced viscosity and superior separator wettability as compared to their non-fluorinated counterparts. Finally, the improved performance in high voltage cells makes it a promising high voltage electrolyte for 5-V lithium-ion chemistry.

Pre-breakdown cavitation nanopores in the dielectric fluid in the inhomogeneous, pulsed electric fields

NASA Astrophysics Data System (ADS)

Pekker, Mikhail; Shneider, Mikhail N.

2015-10-01

This paper discusses the nanopores emerging and developing in a liquid dielectric under the action of the ponderomotive electrostrictive forces in a nonuniform electric field. It is shown that the gradient of the electric field in the vicinity of the rupture (cavitation nanopore) substantially increases and determines whether the rupture grows or collapses. The cavitation rupture in the liquid (nanopore) tends to stretch along the lines of the original field. The mechanism of the breakdown associated with the generation of secondary ruptures in the vicinity of the poles of the nanopore is proposed. The estimations of the extension time for nanopore in water and oil (polar and nonpolar liquids, respectively) are presented. A new mechanism of nano- and subnanosecond breakdown in the insulating (transformer) oil that can be realized in the vicinity of water microdroplets in nanosecond high-voltage devices is considered.

High voltage generator

DOEpatents

Schwemin, A. J.

1959-03-17

A generator for producing relatively large currents at high voltages is described. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The above-noted circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

HIGH VOLTAGE GENERATOR

DOEpatents

Schwemin, A.J.

1959-03-17

A generator is presented for producing relatively large currents at high voltages. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

Optical control system for high-voltage terminals

DOEpatents

Bicek, John J.

1978-01-01

An optical control system for the control of devices in the terminal of an electrostatic accelerator includes a laser that is modulated by a series of preselected codes produced by an encoder. A photodiode receiver is placed in the laser beam at the high-voltage terminal of an electrostatic accelerator. A decoder connected to the photodiode decodes the signals to provide control impulses for a plurality of devices at the high voltage of the terminal.

Effects of thermal and electrical stressing on the breakdown behavior of space wiring

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad; Stavnes, Mark; Suthar, Jayant; Laghari, Javaid

1995-01-01

Several failures in the electrical wiring systems of many aircraft and space vehicles have been attributed to arc tracking and damaged insulation. In some instances, these failures proved to be very costly as they have led to the loss of many aircraft and imperilment of space missions. Efforts are currently underway to develop lightweight, reliable, and arc track resistant wiring for aerospace applications. In this work, six wiring constructions were evaluated in terms of their breakdown behavior as a function of temperature. These hybrid constructions employed insulation consisting of Kapton, Teflon, and cross-linked Tefzel. The properties investigated included the 400 Hz AC dielectric strength at ambient and 200 C, and the lifetime at high temperature with an applied bias of 40, 60, and 80% of breakdown voltage level. The results obtained are discussed, and conclusions are made concerning the suitability of the wiring constructions investigated for aerospace applications.

Effects of thermal and electrical stressing on the breakdown behavior of space wiring

NASA Astrophysics Data System (ADS)

Hammoud, Ahmad; Stavnes, Mark; Suthar, Jayant; Laghari, Javaid

1995-06-01

Several failures in the electrical wiring systems of many aircraft and space vehicles have been attributed to arc tracking and damaged insulation. In some instances, these failures proved to be very costly as they have led to the loss of many aircraft and imperilment of space missions. Efforts are currently underway to develop lightweight, reliable, and arc track resistant wiring for aerospace applications. In this work, six wiring constructions were evaluated in terms of their breakdown behavior as a function of temperature. These hybrid constructions employed insulation consisting of Kapton, Teflon, and cross-linked Tefzel. The properties investigated included the 400 Hz AC dielectric strength at ambient and 200 C, and the lifetime at high temperature with an applied bias of 40, 60, and 80% of breakdown voltage level. The results obtained are discussed, and conclusions are made concerning the suitability of the wiring constructions investigated for aerospace applications.

21 CFR 892.1700 - Diagnostic x-ray high voltage generator.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Diagnostic x-ray high voltage generator. 892.1700... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1700 Diagnostic x-ray high voltage generator. (a) Identification. A diagnostic x-ray high voltage generator is a device that is intended to...

21 CFR 892.1700 - Diagnostic x-ray high voltage generator.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Diagnostic x-ray high voltage generator. 892.1700... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1700 Diagnostic x-ray high voltage generator. (a) Identification. A diagnostic x-ray high voltage generator is a device that is intended to...

21 CFR 892.1700 - Diagnostic x-ray high voltage generator.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Diagnostic x-ray high voltage generator. 892.1700... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1700 Diagnostic x-ray high voltage generator. (a) Identification. A diagnostic x-ray high voltage generator is a device that is intended to...

21 CFR 892.1700 - Diagnostic x-ray high voltage generator.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Diagnostic x-ray high voltage generator. 892.1700... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1700 Diagnostic x-ray high voltage generator. (a) Identification. A diagnostic x-ray high voltage generator is a device that is intended to...

21 CFR 892.1700 - Diagnostic x-ray high voltage generator.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Diagnostic x-ray high voltage generator. 892.1700... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1700 Diagnostic x-ray high voltage generator. (a) Identification. A diagnostic x-ray high voltage generator is a device that is intended to...

A High-Voltage SOI CMOS Exciter Chip for a Programmable Fluidic Processor System.

PubMed

Current, K W; Yuk, K; McConaghy, C; Gascoyne, P R C; Schwartz, J A; Vykoukal, J V; Andrews, C

2007-06-01

A high-voltage (HV) integrated circuit has been demonstrated to transport fluidic droplet samples on programmable paths across the array of driving electrodes on its hydrophobically coated surface. This exciter chip is the engine for dielectrophoresis (DEP)-based micro-fluidic lab-on-a-chip systems, creating field excitations that inject and move fluidic droplets onto and about the manipulation surface. The architecture of this chip is expandable to arrays of N X N identical HV electrode driver circuits and electrodes. The exciter chip is programmable in several senses. The routes of multiple droplets may be set arbitrarily within the bounds of the electrode array. The electrode excitation waveform voltage amplitude, phase, and frequency may be adjusted based on the system configuration and the signal required to manipulate a particular fluid droplet composition. The voltage amplitude of the electrode excitation waveform can be set from the minimum logic level up to the maximum limit of the breakdown voltage of the fabrication technology. The frequency of the electrode excitation waveform can also be set independently of its voltage, up to a maximum depending upon the type of droplets that must be driven. The exciter chip can be coated and its oxide surface used as the droplet manipulation surface or it can be used with a top-mounted, enclosed fluidic chamber consisting of a variety of materials. The HV capability of the exciter chip allows the generated DEP forces to penetrate into the enclosed chamber region and an adjustable voltage amplitude can accommodate a variety of chamber floor thicknesses. This demonstration exciter chip has a 32 x 32 array of nominally 100 V electrode drivers that are individually programmable at each time point in the procedure to either of two phases: 0deg and 180deg with respect to the reference clock. For this demonstration chip, while operating the electrodes with a 100-V peak-to-peak periodic waveform, the maximum HV electrode

Advanced Materials for High Temperature, High Performance, Wide Bandgap Power Modules

NASA Astrophysics Data System (ADS)

O'Neal, Chad B.; McGee, Brad; McPherson, Brice; Stabach, Jennifer; Lollar, Richard; Liederbach, Ross; Passmore, Brandon

2016-01-01

Advanced packaging materials must be utilized to take full advantage of the benefits of the superior electrical and thermal properties of wide bandgap power devices in the development of next generation power electronics systems. In this manuscript, the use of advanced materials for key packaging processes and components in multi-chip power modules will be discussed. For example, to date, there has been significant development in silver sintering paste as a high temperature die attach material replacement for conventional solder-based attach due to the improved thermal and mechanical characteristics as well as lower processing temperatures. In order to evaluate the bond quality and performance of this material, shear strength, thermal characteristics, and void quality for a number of silver sintering paste materials were analyzed as a die attach alternative to solder. In addition, as high voltage wide bandgap devices shift from engineering samples to commercial components, passivation materials become key in preventing premature breakdown in power modules. High temperature, high dielectric strength potting materials were investigated to be used to encapsulate and passivate components internal to a power module. The breakdown voltage up to 30 kV and corresponding leakage current for these materials as a function of temperature is also presented. Lastly, high temperature plastic housing materials are important for not only discrete devices but also for power modules. As the operational temperature of the device and/or ambient temperature increases, the mechanical strength and dielectric properties are dramatically reduced. Therefore, the electrical characteristics such as breakdown voltage and leakage current as a function of temperature for housing materials are presented.

Modular High Voltage Power Supply

DOE Office of Scientific and Technical Information (OSTI.GOV)

Newell, Matthew R.

The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

A compact 100 kV high voltage glycol capacitor.

PubMed

Wang, Langning; Liu, Jinliang; Feng, Jiahuai

2015-01-01

A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

DOE PAGES

King, M. P.; Armstrong, A. M.; Dickerson, J. R.; ...

2015-10-29

Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 10 13 cm -2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaNmore » P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.« less

30 CFR 77.704-2 - Repairs to energized high-voltage lines.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized high-voltage lines. 77.704... UNDERGROUND COAL MINES Grounding § 77.704-2 Repairs to energized high-voltage lines. An energized high-voltage... repairs will be performed on power circuits with a phase-to-phase nominal voltage no greater than 15,000...

From Organized High-Throughput Data to Phenomenological Theory using Machine Learning: The Example of Dielectric Breakdown

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Chiho; Pilania, Ghanshyam; Ramprasad, Ramamurthy

Understanding the behavior (and failure) of dielectric insulators experiencing extreme electric fields is critical to the operation of present and emerging electrical and electronic devices. Despite its importance, the development of a predictive theory of dielectric breakdown has remained a challenge, owing to the complex multiscale nature of this process. We focus on the intrinsic dielectric breakdown field of insulators—the theoretical limit of breakdown determined purely by the chemistry of the material, i.e., the elements the material is composed of, the atomic-level structure, and the bonding. Starting from a benchmark dataset (generated from laborious first principles computations) of the intrinsicmore » dielectric breakdown field of a variety of model insulators, simple predictive phenomenological models of dielectric breakdown are distilled using advanced statistical or machine learning schemes, revealing key correlations and analytical relationships between the breakdown field and easily accessible material properties. Lastly, the models are shown to be general, and can hence guide the screening and systematic identification of high electric field tolerant materials.« less

From Organized High-Throughput Data to Phenomenological Theory using Machine Learning: The Example of Dielectric Breakdown

DOE PAGES

Kim, Chiho; Pilania, Ghanshyam; Ramprasad, Ramamurthy

2016-02-02

Understanding the behavior (and failure) of dielectric insulators experiencing extreme electric fields is critical to the operation of present and emerging electrical and electronic devices. Despite its importance, the development of a predictive theory of dielectric breakdown has remained a challenge, owing to the complex multiscale nature of this process. We focus on the intrinsic dielectric breakdown field of insulators—the theoretical limit of breakdown determined purely by the chemistry of the material, i.e., the elements the material is composed of, the atomic-level structure, and the bonding. Starting from a benchmark dataset (generated from laborious first principles computations) of the intrinsicmore » dielectric breakdown field of a variety of model insulators, simple predictive phenomenological models of dielectric breakdown are distilled using advanced statistical or machine learning schemes, revealing key correlations and analytical relationships between the breakdown field and easily accessible material properties. Lastly, the models are shown to be general, and can hence guide the screening and systematic identification of high electric field tolerant materials.« less

System for instrumenting and manipulating apparatuses in high voltage

DOEpatents

Jordan, Kevin

2016-06-07

A system for energizing, operating and manipulating apparatuses in high voltage systems. The system uses a dielectric gas such as SF.sub.6 as a driving power supply for a pneumatic motor which ultimately charges a battery or other energy storage device. The stored energy can then be used for instrumentation equipment, or to power any electrical equipment, in the high voltage deck. The accompanying method provides for the use of the SF6 system for operating an electrical device in a high-voltage environment.

A quick response four decade logarithmic high-voltage stepping supply

NASA Technical Reports Server (NTRS)

Doong, H.

1978-01-01

An improved high-voltage stepping supply, for space instrumentation is described where low power consumption and fast settling time between steps are required. The high-voltage stepping supply, utilizing an average power of 750 milliwatts, delivers a pair of mirror images with 64 level logarithmic outputs. It covers a four decade range of + or - 2500 to + or - 0.29 volts having an output stability of + or - 0.5 percent or + or - 20 millivolts for all line load and temperature variations. The supply provides a typical step setting time of 1 millisecond with 100 microseconds for the lower two decades. The versatile design features of the high-voltage stepping supply provides a quick response staircase generator as described or a fixed voltage with the option to change levels as required over large dynamic ranges without circuit modifications. The concept can be implemented up to + or - 5000 volts. With these design features, the high-voltage stepping supply should find numerous applications where charged particle detection, electro-optical systems, and high voltage scientific instruments are used.

High voltage electrical amplifier having a short rise time

DOEpatents

Christie, David J.; Dallum, Gregory E.

1991-01-01

A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm‑1

NASA Astrophysics Data System (ADS)

Mandal, S.; Kanathila, M. B.; Pynn, C. D.; Li, W.; Gao, J.; Margalith, T.; Laurent, M. A.; Chowdhury, S.

2018-06-01

We report on the first observation of avalanche electroluminescence resulting from band-to-band recombination (BTBR) of electron hole pairs at the breakdown limit of Gallium Nitride p-n diodes grown homo-epitaxially on single crystalline GaN substrates. The diodes demonstrated a near ideal breakdown electric field of 3 MV cm‑1 with electroluminescence (EL) demonstrating sharp peaks of emission energies near and at the band gap of GaN. The high critical electric field, near the material limit of GaN, was achieved by generating a smooth curved mesa edge with low plasma damage, using etch engineering without any use of field termination. The superior material quality was critical for such a near-ideal performance. An electric field of 3 MV cm‑1 recorded at the breakdown resulted in impact ionization, confirmed by a positive temperature dependence of the breakdown voltage. The spectral data provided evidence of BTBR of electron hole pairs that were generated by avalanche carrier multiplication in the depletion region.

30 CFR 18.53 - High-voltage longwall mining systems.

Code of Federal Regulations, 2012 CFR

2012-07-01

... and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage motor...-interrupting devices must be designed and installed to prevent automatic reclosure. (d) Transformers with high... “open” position; (iv) When located in an explosion-proof enclosure, the device must be designed and...

30 CFR 18.53 - High-voltage longwall mining systems.

Code of Federal Regulations, 2010 CFR

2010-07-01

... and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage motor...-interrupting devices must be designed and installed to prevent automatic reclosure. (d) Transformers with high... “open” position; (iv) When located in an explosion-proof enclosure, the device must be designed and...

30 CFR 18.53 - High-voltage longwall mining systems.

Code of Federal Regulations, 2014 CFR

2014-07-01

... and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage motor...-interrupting devices must be designed and installed to prevent automatic reclosure. (d) Transformers with high... “open” position; (iv) When located in an explosion-proof enclosure, the device must be designed and...

30 CFR 18.53 - High-voltage longwall mining systems.

Code of Federal Regulations, 2013 CFR

2013-07-01

... and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage motor...-interrupting devices must be designed and installed to prevent automatic reclosure. (d) Transformers with high... “open” position; (iv) When located in an explosion-proof enclosure, the device must be designed and...

30 CFR 18.53 - High-voltage longwall mining systems.

Code of Federal Regulations, 2011 CFR

2011-07-01

... and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage motor...-interrupting devices must be designed and installed to prevent automatic reclosure. (d) Transformers with high... “open” position; (iv) When located in an explosion-proof enclosure, the device must be designed and...

30 CFR 75.705 - Work on high-voltage lines; deenergizing and grounding.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines; deenergizing and... Work on high-voltage lines; deenergizing and grounding. [Statutory Provisions] High-voltage lines, both..., except that repairs may be permitted, in the case of energized surface high-voltage lines, if such...

Solid electrolyte: The key for high-voltage lithium batteries

DOE PAGES

Li, Juchuan; Ma, Cheng; Chi, Miaofang; ...

2014-10-14

A solid-state high-voltage (5 V) lithium battery is demonstrated to deliver a cycle life of 10 000 with 90% capacity retention. Furthermore, the solid electrolyte enables the use of high-voltage cathodes and Li anodes with minimum side reactions, leading to a high Coulombic efficiency of 99.98+%.

Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit

NASA Astrophysics Data System (ADS)

Yang, Jiancheng; Ren, F.; Tadjer, Marko; Pearton, S. J.; Kuramata, A.

2018-05-01

A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated β-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 μm thick, lightly-doped drift regions (1.33 x 1016 cm-3) on heavily-doped (3.6 x 1018 cm-3) substrates, exhibited forward current density of 100A.cm-2 at 2.1 V, with absolute current of 1 A at this voltage and a reverse breakdown voltage (VB) of 650V. The on-resistance (RON) was 1.58 x 10-2 Ω.cm2, producing a figure of merit (VB2/RON) of 26.5 MW.cm-2. The Schottky barrier height of the Ni was 1.04 eV, with an ideality factor of 1.02. The on/off ratio was in the range 3.3 x 106 - 5.7 x 109 for reverse biases between 5 and 100V. The reverse recovery time was ˜30 ns for switching from +2V to -5V. The results show the capability of β-Ga2O3 rectifiers to achieve exceptional performance in both forward and reverse bias conditions.

Fast Breakdown as Coronal/Ionization Waves?

NASA Astrophysics Data System (ADS)

Krehbiel, P. R.; Petersen, D.; da Silva, C. L.

2017-12-01

Studies of high-power narrow bipolar events (NBEs) have shown they are produced by a newly-recognized breakdown process called fast positive breakdown (FPB, Rison et al., 2016, doi:10.1038/ncomms10721). The breakdown was inferred to be produced by a system of positive streamers that propagate at high speed ( ˜3-6 x 107 m/s) due to occurring in a localized region of strong electric field. The polarity of the breakdown was determined from broadband interferometer (INTF) observations of the propagation direction of its VHF radiation, which was downward into the main negative charge region of a normally-electrified storm. Subsequent INTF observations being conducted in at Kennedy Space Center in Florida have shown a much greater incidence of NBEs than in New Mexico. Among the larger dataset have been clear-cut instances of some NBEs being produced by upward breakdown that would be of negative polarity. The speed and behavior of the negative breakdown is the same as that of the fast positive, leading to it being termed fast negative breakdown (FNB). The similarity (not too mention its occurrence) is surprising, given the fact that negative streamers and breakdown develops much differently than that of positive breakdown. The question is how this happens. In this study, we compare fast breakdown characteristics to well-known streamer properties as inferred from laboratory experiments and theoretical analysis. Additionally, we begin to explore the possibility that both polarities of fast breakdown are produced by what may be called coronal or ionization waves, in which the enhanced electric field produced by streamer or coronal breakdown of either polarity propagates away from the advancing front at the speed of light into a medium that is in a metastable condition of being at the threshold of hydrometeor-mediated corona onset or other ionization processes. The wave would develop at a faster speed than the streamer breakdown that gives rise to it, and thus would be

High-Voltage, Low-Power BNC Feedthrough Terminator

NASA Technical Reports Server (NTRS)

Bearden, Douglas

2012-01-01

This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

SABRE modification to a higher voltage high impedance inductive voltage adder (IVA)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mazarakis, M.G.; Smith, D.L.; Poukey, J.W.

The SABRE accelerator was originally designed to operate as low impedance voltage adder with 40-ohm maximum output impedance in negative polarity operation and approximately 20 ohm in positive polarity. Because of the low impedance and higher than expected energy losses in the pulse forming network, the operating input cavity voltage is of the order of 800 kV which limits the total output voltage to {approximately} 8 MV for negative polarity and 5 to 6 MV for positive polarity. The modifications presented here aim to increase the output voltage in both polarities. A new high impedance central electrode was designed capablemore » of operating both in negative and positive polarities, and the number of pulse forming lines feeding the inductively isolated cavities was reduced to half. These modifications were recently tested in positive polarity. An increase in the total accelerating voltage from 5.5 MV to 9 MV was observed while stressing all components to the level required to achieve 12 MV in negative polarity. In these experiments only 65% of the usual operating intermediate store capacitor voltage was necessary (1.7 MV instead of 2.6 MV). Currently, the device is reconfigured for negative polarity tests. The cavities are rotated by 180{degree} and a 17-inch spool is added at the base of the cantilevered center electrode (cathode electrode). Positive and negative polarity results are presented and compared with simulations.« less

Time-Domain Full-Wave Modeling of Nonlinear Air Breakdown in High-Power Microwave Devices and Systems

DTIC Science & Technology

2017-09-30

AFRL-RD-PS- AFRL-RD-PS- TR-2017-0047 TR-2017-0047 TIME -DOMAIN FULL-WAVE MODELING OF NONLINEAR AIR BREAKDOWN IN HIGH-POWER MICROWAVE...Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions...TITLE AND SUBTITLE Time -Domain Full-Wave Modeling of Nonlinear Air Breakdown in High-Power Microwave Devices and Systems 5a. CONTRACT NUMBER 5b

High-Capacity Cathode Material with High Voltage for Li-Ion Batteries

DOE PAGES

Shi, Ji -Lei; Xiao, Dong -Dong; Ge, Mingyuan; ...

2018-01-15

Electrochemical energy storage devices with a high energy density are an important technology in modern society, especially for electric vehicles. The most effective approach to improve the energy density of batteries is to search for high-capacity electrode materials. According to the concept of energy quality, a high-voltage battery delivers a highly useful energy, thus providing a new insight to improve energy density. Based on this concept, a novel and successful strategy to increase the energy density and energy quality by increasing the discharge voltage of cathode materials and preserving high capacity is proposed. The proposal is realized in high-capacity Li-richmore » cathode materials. The average discharge voltage is increased from 3.5 to 3.8 V by increasing the nickel content and applying a simple after-treatment, and the specific energy is improved from 912 to 1033 Wh kg-1. The current work provides an insightful universal principle for developing, designing, and screening electrode materials for high energy density and energy quality.« less

High-Capacity Cathode Material with High Voltage for Li-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Ji -Lei; Xiao, Dong -Dong; Ge, Mingyuan

Electrochemical energy storage devices with a high energy density are an important technology in modern society, especially for electric vehicles. The most effective approach to improve the energy density of batteries is to search for high-capacity electrode materials. According to the concept of energy quality, a high-voltage battery delivers a highly useful energy, thus providing a new insight to improve energy density. Based on this concept, a novel and successful strategy to increase the energy density and energy quality by increasing the discharge voltage of cathode materials and preserving high capacity is proposed. The proposal is realized in high-capacity Li-richmore » cathode materials. The average discharge voltage is increased from 3.5 to 3.8 V by increasing the nickel content and applying a simple after-treatment, and the specific energy is improved from 912 to 1033 Wh kg-1. The current work provides an insightful universal principle for developing, designing, and screening electrode materials for high energy density and energy quality.« less

High voltage system: Plasma interaction summary

NASA Technical Reports Server (NTRS)

Stevens, N. John

1986-01-01

The possible interactions that could exist between a high voltage system and the space plasma environment are reviewed. A solar array is used as an example of such a system. The emphasis in this review is on the discrepancies that exist in this technology in both flight and ground experiment data. It has been found that, in ground testing, there are facility effects, cell size effects and area scaling uncertainties. For space applications there are area scaling and discharge concerns for an array as well as the influence of the large space structures on the collection process. There are still considerable uncertainties in the high voltage-space plasma interaction technology even after several years of effort.

Scaling laws for gas breakdown for nanoscale to microscale gaps at atmospheric pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Loveless, Amanda M.; Garner, Allen L., E-mail: algarner@purdue.edu

2016-06-06

Electronics miniaturization motivates gas breakdown predictions for microscale and smaller gaps, since traditional breakdown theory fails when gap size, d, is smaller than ∼15 μm at atmospheric pressure, p{sub atm}. We perform a matched asymptotic analysis to derive analytic expressions for breakdown voltage, V{sub b}, at p{sub atm} for 1 nm ≤ d ≤ 35 μm. We obtain excellent agreement between numerical, analytic, and particle-in-cell simulations for argon, and show V{sub b} decreasing as d → 0, instead of increasing as predicted by Paschen's law. This work provides an analytic framework for determining V{sub b} at atmospheric pressure for various gap distances that may be extended tomore » other gases.« less

Evaluation of high temperature dielectric films for high voltage power electronic applications

NASA Technical Reports Server (NTRS)

Suthar, J. L.; Laghari, J. R.

1992-01-01

Three high temperature films, polyimide, Teflon perfluoroalkoxy and poly-P-xylene, were evaluated for possible use in high voltage power electronic applications, such as in high energy density capacitors, cables and microelectronic circuits. The dielectric properties, including permittivity and dielectric loss, were obtained in the frequency range of 50 Hz to 100 kHz at temperatures up to 200 C. The dielectric strengths at 60 Hz were determined as a function of temperature to 250 C. Confocal laser microscopy was performed to diagnose for voids and microimperfections within the film structure. The results obtained indicate that all films evaluated are capable of maintaining their high voltage properties, with minimal degradation, at temperatures up to 200 C. However, above 200 C, they lose some of their electrical properties. These films may therefore become viable candidates for high voltage power electronic applications at high temperatures.

High voltage holding in the negative ion sources with cesium deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belchenko, Yu.; Abdrashitov, G.; Ivanov, A.

High voltage holding of the large surface-plasma negative ion source with cesium deposition was studied. It was found that heating of ion-optical system electrodes to temperature >100 °C facilitates the source conditioning by high voltage pulses in vacuum and by beam shots. The procedure of electrode conditioning and the data on high-voltage holding in the negative ion source with small cesium seed are described. The mechanism of high voltage holding improvement by depletion of cesium coverage is discussed.

Planar multijunction high voltage solar cells

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.; Chai, A. T.; Goradia, C.

1980-01-01

Technical considerations, preliminary results, and fabrication details are discussed for a family of high-voltage planar multi-junction (PMJ) solar cells which combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

Voltage-Load Sensitivity Matrix Based Demand Response for Voltage Control in High Solar Penetration Distribution Feeders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Xiangqi; Wang, Jiyu; Mulcahy, David

This paper presents a voltage-load sensitivity matrix (VLSM) based voltage control method to deploy demand response resources for controlling voltage in high solar penetration distribution feeders. The IEEE 123-bus system in OpenDSS is used for testing the performance of the preliminary VLSM-based voltage control approach. A load disaggregation process is applied to disaggregate the total load profile at the feeder head to each load nodes along the feeder so that loads are modeled at residential house level. Measured solar generation profiles are used in the simulation to model the impact of solar power on distribution feeder voltage profiles. Different casemore » studies involving various PV penetration levels and installation locations have been performed. Simulation results show that the VLSM algorithm performance meets the voltage control requirements and is an effective voltage control strategy.« less

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

NASA Technical Reports Server (NTRS)

Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

2015-01-01

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources - a nominal 300-Volt high voltage input bus and a nominal 28-Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power supplies that provide power to the thruster auxiliary supplies, and two parallel 7.5 kilowatt power supplies that are capable of providing up to 15 kilowatts of total power at 300-Volts to 500-Volts to the thruster discharge supply. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall Effect Thruster. The performance of unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate the exceptional performance with full power efficiencies exceeding 97. With a space-qualified silicon carbide or similar high voltage, high efficiency power device, this design could evolve into a flight design for future missions that require high power electric propulsion systems.

Preparation and Dielectric Properties of SiC/LSR Nanocomposites for Insulation of High Voltage Direct Current Cable Accessories

PubMed Central

Shang, Nanqiang; Chen, Qingguo; Wei, Xinzhe

2018-01-01

The conductivity mismatch in the composite insulation of high voltage direct current (HVDC) cable accessories causes electric field distribution distortion and even insulation breakdown. Therefore, a liquid silicone rubber (LSR) filled with SiC nanoparticles is prepared for the insulation of cable accessories. The micro-morphology of the SiC/LSR nanocomposites is observed by scanning electron microscopy, and their trap parameters are characterized using thermal stimulated current (TSC) tests. Moreover, the dielectric properties of SiC/LSR nanocomposites with different SiC concentrations are tested. The results show that the 3 wt % SiC/LSR sample has the best nonlinear conductivity, more than one order of magnitude higher than that of pure LSR with improved temperature and nonlinear conductivity coefficients. The relative permittivity increased 0.2 and dielectric loss factor increased 0.003, while its breakdown strength decreased 5 kV/mm compared to those of pure LSR. Moreover, the TSC results indicate the introduction of SiC nanoparticles reduced the trap level and trap density. Furthermore, the SiC nanoparticles filling significantly increased the sensitivity of LSR to electric field stress and temperature changes, enhancing the conductivity and electric field distribution within the HVDC cable accessories, thus improving the reliability of the HVDC cable accessories. PMID:29518054

Preparation and Dielectric Properties of SiC/LSR Nanocomposites for Insulation of High Voltage Direct Current Cable Accessories.

PubMed

Shang, Nanqiang; Chen, Qingguo; Wei, Xinzhe

2018-03-08

The conductivity mismatch in the composite insulation of high voltage direct current (HVDC) cable accessories causes electric field distribution distortion and even insulation breakdown. Therefore, a liquid silicone rubber (LSR) filled with SiC nanoparticles is prepared for the insulation of cable accessories. The micro-morphology of the SiC/LSR nanocomposites is observed by scanning electron microscopy, and their trap parameters are characterized using thermal stimulated current (TSC) tests. Moreover, the dielectric properties of SiC/LSR nanocomposites with different SiC concentrations are tested. The results show that the 3 wt % SiC/LSR sample has the best nonlinear conductivity, more than one order of magnitude higher than that of pure LSR with improved temperature and nonlinear conductivity coefficients. The relative permittivity increased 0.2 and dielectric loss factor increased 0.003, while its breakdown strength decreased 5 kV/mm compared to those of pure LSR. Moreover, the TSC results indicate the introduction of SiC nanoparticles reduced the trap level and trap density. Furthermore, the SiC nanoparticles filling significantly increased the sensitivity of LSR to electric field stress and temperature changes, enhancing the conductivity and electric field distribution within the HVDC cable accessories, thus improving the reliability of the HVDC cable accessories.

Electro-optic high voltage sensor

DOEpatents

Davidson, James R.; Seifert, Gary D.

2002-01-01

A small sized electro-optic voltage sensor capable of accurate measurement of high levels of voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation into the sensor. A polarization beam displacer serves as a filter to separate the input beam into two beams with orthogonal linear polarizations. The beam displacer is oriented in such a way as to rotate the linearly polarized beams such that they enter a Pockels crystal having at a preferred angle of 45 degrees. The beam displacer is therefore capable of causing a linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels electro-optic effect induces a differential phase shift on the major and minor axes of the input beam as it travels through the Pockels crystal, which causes the input beam to be elliptically polarized. A reflecting prism redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization representing the major and minor axes. The system may include a detector for converting the output beams into electrical signals, and a signal processor for determining the voltage based on an analysis of the output beams. The output beams are amplitude modulated by the frequency of the electric field and the amplitude of the output beams is proportional to the magnitude of the electric field, which is related to the voltage being measured.

COTS Li-Ion Cells in High Voltage Batteries

NASA Technical Reports Server (NTRS)

Davies, Francis; Darcy, Eric; Jeevarajan, Judy; Cowles, Phil

2003-01-01

Testing at NASA JSC and COMDEV shows that Commercial Off the Shelf (COTS) Li Ion cells can not be used in high voltage batteries safely without considering the voltage stresses that may be put on the protective devices in them during failure modes.

Multiloop Rapid-Rise/Rapid Fall High-Voltage Power Supply

NASA Technical Reports Server (NTRS)

Bearden, Douglas

2007-01-01

A proposed multiloop power supply would generate a potential as high as 1.25 kV with rise and fall times <100 s. This power supply would, moreover, be programmable to generate output potentials from 20 to 1,250 V and would be capable of supplying a current of at least 300 A at 1,250 V. This power supply is intended to be a means of electronic shuttering of a microchannel plate that would be used to intensify the output of a charge-coupled-device imager to obtain exposure times as short as 1 ms. The basic design of this power supply could also be adapted to other applications in which high voltages and high slew rates are needed. At the time of reporting the information for this article, there was no commercially available power supply capable of satisfying the stated combination of voltage, rise-time, and fall-time requirements. The power supply would include a preregulator that would be used to program a voltage 1/30 of the desired output voltage. By means of a circuit that would include a pulse-width modulator (PWM), two voltage doublers, and a transformer having two primary and two secondary windings, the preregulator output voltage would be amplified by a factor of 30. A resistor would limit the current by controlling a drive voltage applied to field-effect transistors (FETs) during turn-on of the PWM. Two feedback loops would be used to regulate the high output voltage. A pulse transformer would be used to turn on four FETs to short-circuit output capacitors when the outputs of the PWM were disabled. Application of a 0-to-5-V square to a PWM shut-down pin would cause a 20-to-1,250-V square wave to appear at the output.

A Double-Pole High Voltage High Current Switch

DTIC Science & Technology

2005-12-01

NAVAL POSTGRADUATE SCHOOL MONTEREY, CALIFORNIA THESIS Approved for public release; distribution is unlimited A DOUBLE- POLE HIGH...December 2005 3. REPORT TYPE AND DATES COVERED Master’s Thesis 4. TITLE AND SUBTITLE: A Double- Pole High Voltage High Current Switch 6. AUTHOR(S...to divert heavy charged particles, e.g. Cu+. 15. NUMBER OF PAGES 68 14. SUBJECT TERMS Double- Pole , Pulse Forming Inductive Network, PFIN

Signal enhancement in laser-induced breakdown spectroscopy using fast square-pulse discharges

NASA Astrophysics Data System (ADS)

Sobral, H.; Robledo-Martinez, A.

2016-10-01

A fast, high voltage square-shaped electrical pulse initiated by laser ablation was investigated as a means to enhance the analytical capabilities of laser Induced breakdown spectroscopy (LIBS). The electrical pulse is generated by the discharge of a charged coaxial cable into a matching impedance. The pulse duration and the stored charge are determined by the length of the cable. The ablation plasma was produced by hitting an aluminum target with a nanosecond 532-nm Nd:YAG laser beam under variable fluence 1.8-900 J cm- 2. An enhancement of up to one order of magnitude on the emission signal-to-noise ratio can be achieved with the spark discharge assisted laser ablation. Besides, this increment is larger for ionized species than for neutrals. LIBS signal is also increased with the discharge voltage with a tendency to saturate for high laser fluences. Electron density and temperature evolutions were determined from time delays of 100 ns after laser ablation plasma onset. Results suggest that the spark discharge mainly re-excites the laser produced plume.

Recycling potential for low voltage and high voltage high rupturing capacity fuse links.

PubMed

Psomopoulos, Constantinos S; Barkas, Dimitrios A; Kaminaris, Stavros D; Ioannidis, George C; Karagiannopoulos, Panagiotis

2017-12-01

Low voltage and high voltage high-rupturing-capacity fuse links are used in LV and HV installations respectively, protecting mainly the LV and HV electricity distribution and transportation networks. The Waste Electrical and Electronic Equipment Directive (2002/96/EC) for "Waste of electrical and electronic equipment" is the main related legislation and as it concerns electrical and electronic equipment, it includes electric fuses. Although, the fuse links consist of recyclable materials, only small scale actions have been implemented for their recycling around Europe. This work presents the possibilities for material recovery from this specialized industrial waste for which there are only limited volume data. Furthermore, in order to present the huge possibilities and environmental benefits, it presents the potential for recycling of HRC fuses used by the Public Power Corporation of Greece, which is the major consumer for the country, but one of the smallest ones in Europe and globally, emphasizing in this way in the issue. According to the obtained results, fuse recycling could contribute to the effort for minimize the impacts on the environment through materials recovery and reduction of the wastes' volume disposed of in landfills. Copyright © 2017 Elsevier Ltd. All rights reserved.

Gas Breakdown in the Sub-Nanosecond Regime with Voltages Below 15 KV

DTIC Science & Technology

2013-06-01

needle -plane gap with outer coaxial conductor, and a 50-Ω load line. The needle consists of tungsten and has a radius of curvature below 0.5 µm. The...here gas breakdown during nanosecond pulses occurs mainly as corona discharges on wire antennas, and represents an unwanted effect - General...risetime between 400 ps to1 ns), 50-W transmission line, axial needle -plane gap with outer coaxial conductor, and a 50-W load line. The needle consists of

30 CFR 75.705-2 - Repairs to energized surface high-voltage lines.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized surface high-voltage lines... Repairs to energized surface high-voltage lines. An energized high-voltage surface line may be repaired... on power circuits with a phase-to-phase nominal voltage no greater than 15,000 volts; (3) Such...

Influence of high-power nonlinear consumers on electric energy losses in mining high-voltage power line

NASA Astrophysics Data System (ADS)

Averbukh, M. A.; Prasol, D. A.

2018-03-01

The article elucidates the influence of high-power nonlinear consumers on electric energy losses in a mining high-voltage power line. The object of the study was a fragment of a power supply system of a mining enterprise with hoists. The investigation has assessed the electric energy losses conditioned by nonsinusoidal currents and voltages of the power line over a single hoist operation cycle. Also, the total electric energy losses in a high-voltage power line of a mining enterprise was calculated. The energy losses due to nonsinusoidal currents and voltages over single operation cycle of the cage hoist amount to 36.358 kWh. The presence of such losses increases total technological power and energy losses in the mining high-voltage power line by approximately 5-15%. The total energy losses in the components of the mining enterprise high-voltage power line caused by nonsinusoidal voltage are significant and lead to additional expenses of the company.

Neutron-induced single event burnout in high voltage electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Normand, E.; Wert, J.L.; Oberg, D.L.

Energetic neutrons with an atmospheric neutron spectrum, which were demonstrated to induce single event burnout in power MOSFETs, have been shown to induce burnout in high voltage (>3,000V) electronics when operated at voltages as low as 50% of rated voltage. The laboratory failure rates correlate well with field failure rates measured in Europe.

Surface voltage gradient role in high voltage solar array-plasma interaction: Center Director's discretionary fund

NASA Technical Reports Server (NTRS)

Carruth, M. R., Jr.

1985-01-01

A large amount of experimental and analytical effort has been directed toward understanding the plasma sheath growth and discharge phenomena which lead to high voltage solar array-space plasma interactions. An important question which has not been addressed is how the surface voltage gradient on such an array may affect these interactions. The results of this study indicate that under certain conditions, the voltage gradient should be taken into account when evaluating the effect on a solar array operating in a plasma environment.

Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

NASA Astrophysics Data System (ADS)

Ma, Pengfei; Du, Lulu; Wang, Yiming; Jiang, Ran; Xin, Qian; Li, Yuxiang; Song, Aimin

2018-01-01

An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al2O3 layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6 V. In particular, a very high gate capacitance of 720 nF/cm2 was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1 V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2 × 107. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3 × 106. The electron transport through the Al2O3 layer has also been analyzed, indicating the Fowler-Nordheim tunneling mechanism.

Planar LTCC transformers for high voltage flyback converters.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schofield, Daryl; Schare, Joshua M.; Glass, Sarah Jill

This paper discusses the design and use of low-temperature (850 C to 950 C) co-fired ceramic (LTCC) planar magnetic flyback transformers for applications that require conversion of a low voltage to high voltage (> 100V) with significant volumetric constraints. Measured performance and modeling results for multiple designs showed that the LTCC flyback transformer design and construction imposes serious limitations on the achievable coupling and significantly impacts the transformer performance and output voltage. This paper discusses the impact of various design factors that can provide improved performance by increasing transformer coupling and output voltage. The experiments performed on prototype units demonstratedmore » LTCC transformer designs capable of greater than 2 kV output. Finally, the work investigated the effect of the LTCC microstructure on transformer insulation. Although this paper focuses on generating voltages in the kV range, the experimental characterization and discussion presented in this work applies to designs requiring lower voltage.« less

Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters

NASA Technical Reports Server (NTRS)

Wilson, P. M.; Wilson, T. G.; Owen, H. A., Jr.

1982-01-01

Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.

Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters

NASA Astrophysics Data System (ADS)

Wilson, P. M.; Wilson, T. G.; Owen, H. A., Jr.

Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.

[Design of a high-voltage insulation testing system of X-ray high frequency generators].

PubMed

Huang, Yong; Mo, Guo-Ming; Wang, Yan; Wang, Hong-Zhi; Yu, Jie-Ying; Dai, Shu-Guang

2007-09-01

In this paper, we analyze the transformer of X-ray high-voltage high-frequency generators and, have designed and implemented a high-voltage insulation testing system for its oil tank using full-bridge series resonant soft switching PFM DC-DC converter.

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

NASA Technical Reports Server (NTRS)

Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

2015-01-01

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

High-voltage supply for neutron tubes in well-logging applications

DOEpatents

Humphreys, D.R.

1982-09-15

A high voltage supply is provided for a neutron tube used in well logging. The biased pulse supply of the invention combines DC and full pulse techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

High voltage supply for neutron tubes in well logging applications

DOEpatents

Humphreys, D. Russell

1989-01-01

A high voltage supply is provided for a neutron tube used in well logging. The "biased pulse" supply of the invention combines DC and "full pulse" techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

High Voltage TAL Performance

NASA Technical Reports Server (NTRS)

Jacobson, David T.; Jankovsky, Robert S.; Rawlin, Vincent K.; Manzella, David H.

2001-01-01

The performance of a two-stage, anode layer Hall thruster was evaluated. Experiments were conducted in single and two-stage configurations. In single-stage configuration, the thruster was operated with discharge voltages ranging from 300 to 1700 V. Discharge specific impulses ranged from 1630 to 4140 sec. Thruster investigations were conducted with input power ranging from 1 to 8.7 kW, corresponding to power throttling of nearly 9: 1. An extensive two-stage performance map was generated. Data taken with total voltage (sum of discharge and accelerating voltage) constant revealed a decrease in thruster efficiency as the discharge voltage was increased. Anode specific impulse values were comparable in the single and two-stage configurations showing no strong advantage for two-stage operation.

High improvement in trap level density and direct current breakdown strength of block polypropylene by doping with a β-nucleating agent

NASA Astrophysics Data System (ADS)

Zhang, Chong; Zha, Jun-Wei; Yan, Hong-Da; Li, Wei-Kang; Dang, Zhi-Min

2018-02-01

Polypropylene is one kind of eco-friendly insulating material, which has attracted more attention for use in high voltage direct current (HVDC) insulation due to the long-distance transmission, low loss, and recyclability. In this work, the morphology and thermal and electrical properties of the block polypropylene with various β-nucleating agent (β-NA) contents were investigated. The relative fraction of the β-crystal can reach 64.7% after adding 0.05 wt. % β-NA. The β-NA also greatly reduced the melting point and improved the crystallization temperature. The electrical property results showed that the alternating and direct current breakdown strength and conduction current were obviously improved. In addition, space charge accumulation was significantly suppressed by introducing the β-NA. This work provides an attractive strategy of design and fabrication of polypropylene for HVDC application.

Partial discharges and breakdown in C3F8

NASA Astrophysics Data System (ADS)

Koch, M.; Franck, C. M.

2014-10-01

Traditional search processes of gases or gas mixtures for replacing SF6 involve time consuming measurements of partial discharges and breakdown behaviour for several voltage waveforms and different field configurations. Recently a model for prediction of this behaviour for SF6 was described in literature. The model only requires basic properties of the gas such as the critical field strength and the effective ionization coefficient, which can be obtained by swarm parameter measurements, and thermodynamic properties, which can be calculated. In this paper, we show for the well-known and electronegative gas octafluoropropane (C3F8) that it is possible to transfer the model developed for SF6 to this gas to describe the breakdown behaviour of C3F8. Thus the model can be beneficial in the screening process of new insulation gases.

Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer.

PubMed

Pang, Chin-Sheng; Hwu, Jenn-Gwo

2014-01-01