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Sample records for high breakdown voltage

  1. High Voltage Coaxial Vacuum Gap Breakdown for Pulsed Power Liners

    NASA Astrophysics Data System (ADS)

    Cordaro, Samuel; Bott-Suzuki, Simon; Caballero Bendixsen, Luis Sebastian

    2015-11-01

    The dynamics of Magnetized Liner Inertial Fusion (MagLIF)1, are presently under detailed study at Sandia National Laboratories. Alongside this, a comprehensive analysis of the influence of the specific liner design geometry in the MagLIF system on liner initiation is underway in the academic community. Recent work at UC San Diego utilizes a high voltage pulsed system (25kV, 150ns) to analyze the vacuum breakdown stage of liner implosion. Such experimental analyses are geared towards determining how the azimuthal symmetry of coaxial gap breakdown affect plasma initiation within the liner. The final aim of the experimental analysis is to assess to what scale symmetry remains important at high (MV) voltages. An analysis of the above will utilize plasma self-emission via optical MCP, current measurements, voltage measurements near the gap, exact location of breakdown via 2D b-dot probe triangulation, as well as measuring the evolution of the B-field along the length of the liner via b-dot array. Results will be discussed along with analytical calculations of breakdown mechanisms

  2. High-voltage atmospheric breakdown across intervening rutile dielectrics.

    SciTech Connect

    Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

    2013-09-01

    This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

  3. High Voltage Breakdown Levels in Various EPC Potting Materials

    NASA Technical Reports Server (NTRS)

    Komm, David S.

    2006-01-01

    This viewgraph presentation reviews exploration activities at JPL into various potting materials. Since high power space-borne microwave transmitters invariably use a vacuum tube as a final power amplifier, and this tube requires high electrode voltages for operation. The associated high voltage insulation typically represents a significant fraction of the mass of the transmitter. Since mass is always a premium resource on board spacecraft, we have been investigating materials with the potential to reduce the mass required for our applications here at JPL. This paper describes electrical breakdown results obtained with various potting materials. Conathane EN-11 (polyurethane) is the traditional HVPS encapsulant at JPL, but due to temperature limitations and durability issues it was deemed inappropriate for the particular application (i.e., CloudSat radar). The choices for the best available materials were epoxies, or silicones. Epoxies are too rigid, and were deemed inadvisable. Two silicones were further investigated (i.e.,ASTM E595- 93e2: GE RTV566(R) and Dow Corning 93-500X(R), another compound was considered (i.e., DC material, Sylgard 184(R)). "Loading" (adding filler materials) the potting compound will frequently alter the final material properties. Powdered alumina and borosilicate glass known as "microballoons" were investigated as possible loading materials. The testing of the materials is described. Each of the two loading materials offers advantages and disadvantages. The advantages and disadvantages are described.

  4. Voltage-induced recovery of dielectric breakdown (high current resistance switching) in HfO2

    NASA Astrophysics Data System (ADS)

    El Kamel, F.; Gonon, P.; Vallée, C.; Jousseaume, V.; Grampeix, H.

    2011-01-01

    Metal/HfO2/Pt stacks (where the metal is Au, Ag, Co, Ni, Cr, or In) are voltage stressed to induce a high-to-low resistive transition. No current compliance is applied during stressing (except the 100 mA limit of the voltage source). As a consequence very high conductance states are reached after switching, similar to a hard breakdown. Samples conductance after breakdown can reach up to 0.1 S, depending on the metal electrode. Despite the high postbreakdown conductance level, the samples are able to recover an insulating state by further voltage biasing ("high current resistance switching").

  5. Measuring Breakdown Voltage.

    ERIC Educational Resources Information Center

    Auer, Herbert J.

    1978-01-01

    The article discusses an aspect of conductivity, one of the electrical properties subdivisions, and describes a tester that can be shop-built. Breakdown voltage of an insulation material is specifically examined. Test procedures, parts lists, diagrams, and test data form are included. (MF)

  6. Ionizing potential waves and high-voltage breakdown streamers.

    NASA Technical Reports Server (NTRS)

    Albright, N. W.; Tidman, D. A.

    1972-01-01

    The structure of ionizing potential waves driven by a strong electric field in a dense gas is discussed. Negative breakdown waves are found to propagate with a velocity proportional to the electric field normal to the wavefront. This causes a curved ionizing potential wavefront to focus down into a filamentary structure, and may provide the reason why breakdown in dense gases propagates in the form of a narrow leader streamer instead of a broad wavefront.

  7. Breakdown in helium in high-voltage open discharge with subnanosecond current front rise

    NASA Astrophysics Data System (ADS)

    Schweigert, I. V.; Alexandrov, A. L.; Bokhan, P. A.; Zakrevskiy, Dm. E.

    2016-07-01

    Investigations of high-voltage open discharge in helium have shown a possibility of generation of current pulses with subnanosecond front rise, due to ultra-fast breakdown development. The open discharge is ignited between two planar cathodes with mesh anode in the middle between them. For gas pressure 6 Torr and 20 kV applied voltage, the rate of current rise reaches 500 A/(cm2 ns) for current density 200 A/cm2 and more. The time of breakdown development was measured for different helium pressures and a kinetic model of breakdown in open discharge is presented, based on elementary reactions for electrons, ions and fast atoms. The model also includes various cathode emission processes due to cathode bombardment by ions, fast atoms, electrons and photons of resonant radiation with Doppler shift of frequency. It is shown, that the dominating emission processes depend on the evolution of the discharge voltage during the breakdown. In the simulations, two cases of voltage behavior were considered: (i) the voltage is kept constant during the breakdown; (ii) the voltage is reduced with the growth of current. For the first case, the exponentially growing current is maintained due to photoemission by the resonant photons with Doppler-shifted frequency. For the second case, the dominating factor of current growth is the secondary electron emission. In both cases, the subnanosecond rise of discharge current was obtained. Also the effect of gas pressure on breakdown development was considered. It was found that for 20 Torr gas pressure the time of current rise decreases to 0.1 ns, which is in agreement with experimental data.

  8. Effect of Doppler-shifted photons on subnanosecond breakdown in high-voltage pulse discharge

    NASA Astrophysics Data System (ADS)

    Schweigert, I. V.; Alexandrov, A. L.; Zakrevsky, Dm. E.; Bokhan, P. A.

    2016-06-01

    The experiments in high-voltage open discharge in helium [1, 2] showed a controlled current growth rate of 500 A/(cm2ns) for an applied voltage of 20 kV and gas pressure of 6 Torr. A kinetic model of the subnanosecond breakdown is developed to analyze the mechanism of current growth, which takes into account the kinetics of electrons, ions, fast atoms and photons with a Doppler shift (DS). DS photons appear in discharge due to collisions of heavy particles. Using particle in cell simulations, we show a critical role of DS photons in the electron emission from the cathode during the breakdown. Our experimental and calculation results show a decrease of the breakdown time with increasing gas pressure from 3 Torr to 16 Torr.

  9. Method of making high breakdown voltage semiconductor device

    DOEpatents

    Arthur, Stephen D.; Temple, Victor A. K.

    1990-01-01

    A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.

  10. Two dimensional triangulation of breakdown in a high voltage coaxial gap

    NASA Astrophysics Data System (ADS)

    Cordaro, S. W.; Bott-Suzuki, S. C.; Caballero Bendixsen, L. S.; Atoyan, Levon; Byvank, Tom; Potter, William; Kusse, B. R.; Greenly, J. B.

    2015-07-01

    We describe a technique by which magnetic field probes are used to triangulate the exact position of breakdown in a high voltage coaxial vacuum gap. An array of three probes is placed near the plane of the gap with each probe at 90° intervals around the outer (anode) electrode. These probes measure the azimuthal component of the magnetic field and are all at the same radial distance from the cylindrical axis. Using the peak magnetic field values measured by each probe, the current carried by the breakdown channel, and Ampères law we can calculate the distance away from each probe that the breakdown occurred. These calculated distances are then used to draw three circles each centered at the centers of the corresponding magnetic probes. The common intersection of these three circles then gives the predicted azimuthal location of the center of the breakdown channel. Test results first gathered on the coaxial gap breakdown device (240 A, 25 kV, 150 ns) at the University of California San Diego and then on COBRA (1 MA, 1 MV, 100 ns) at Cornell University indicate that this technique is relatively accurate and scales between these two devices.

  11. Effect of high solenoidal magnetic fields on breakdown voltages of high vacuum 805 MHz cavities

    SciTech Connect

    Moretti, A.; Bross, A.; Geer, S.; Qian, Z.; Norem, J.; Li, D.; Zisman, M.; Torun, Y.; Rimmer, R.; Errede, D.; /Illinois U., Urbana

    2005-10-01

    There is an on going international collaboration studying the feasibility and cost of building a muon collider or neutrino factory [1,2]. An important aspect of this study is the full understanding of ionization cooling of muons by many orders of magnitude for the collider case. An important muon ionization cooling experiment, MICE [3], has been proposed to demonstrate and validate the technology that could be used for cooling. Ionization cooling is accomplished by passing a high-emittance muon beam alternately through regions of low Z material, such as liquid hydrogen, and very high accelerating RF Cavities within a multi-Tesla solenoidal field. To determine the effect of very large solenoidal magnetic fields on the generation of dark current, x-rays and on the breakdown voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station and a large warm bore 5 T solenoidal superconducting magnet containing a pill box type cavity with thin removable window apertures. This system allows dark current and breakdown studies of different window configurations and materials. The results of this study will be presented. The study has shown that the peak achievable accelerating gradient is reduced by a factor greater than 2 when solenoidal field of greater than 2 T are applied to the cavity.

  12. Energy dissipation on ion-accelerator grids during high-voltage breakdown

    SciTech Connect

    Menon, M.M.; Ponte, N.S.

    1981-01-01

    The effects of stored energy in the system capacitance across the accelerator grids during high voltage vacuum breakdown are examined. Measurements were made of the current flow and the energy deposition on the grids during breakdown. It is shown that only a portion (less than or equal to 40 J) of the total stored energy (congruent to 100 J) is actually dissipated on the grids. Most of the energy is released during the formation phase of the vacuum arc and is deposited primarily on the most positive grid. Certain abnormal situations led to energy depositions of about 200 J on the grid, but the ion accelerator endured them without exhibiting any deterioration in performance.

  13. Breakdown voltages for discharges initiated from plasma pulses produced by high-frequency excimer lasers

    SciTech Connect

    Yamaura, Michiteru

    2006-06-19

    The triggering ability under the different electric field was investigated using a KrF excimer laser with a high repetition rate of kilohertz order. Measurements were made of the magnitude of impulse voltages that were required to initiate a discharge from plasmas produced by a high-frequency excimer laser. Breakdown voltages were found to be reduced by 50% through the production of plasmas in the discharge gap by a high-frequency excimer laser. However, under direct-current electric field, triggering ability decreased drastically due to low plasma density. It is considered that such laser operation applied for laser-triggered lightning due to the produced location of plasma channel is formed under the impulse electric field since an electric field of the location drastically reduces temporary when the downward leader from thunderclouds propagates to the plasma channel.

  14. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

    NASA Astrophysics Data System (ADS)

    Jun, Luo; Sheng-Lei, Zhao; Min-Han, Mi; Wei-Wei, Chen; Bin, Hou; Jin-Cheng, Zhang; Xiao-Hua, Ma; Yue, Hao

    2016-02-01

    The effects of gate length LG on breakdown voltage VBR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with LG = 1 μm˜ 20 μm. With the increase of LG, VBR is first increased, and then saturated at LG = 3 μm. For the HEMT with LG = 1 μm, breakdown voltage VBR is 117 V, and it can be enhanced to 148 V for the HEMT with LG = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with LG > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG = 3 μm˜20 μm, and their breakdown voltages are in a range of 140 V-156 V. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61204085).

  15. Effect of surface conditions affecting voltage breakdowns

    NASA Astrophysics Data System (ADS)

    Flauta, Randolph; Aghazarian, Maro; Caughman, John; Ruzic, David

    2008-11-01

    The maximum power transferred by ion cyclotron range of frequency (ICRF) antennas is dependent on the breakdown threshold when operated at high voltages. The voltage that these antennas can withstand is lowered and hence breakdowns occur due to many factors. The Surface Plasma Arcs by Radiofrequency - Control Study or SPARCS facility has a 0-15kV DC power supply to deliver power to flat cathode surface and semi-spherical anode made of Cu and Al under 10-8-10-6 torr vacuum conditions. The effects of different surface conditions on the breakdown threshold were then investigated. Also, as the ICRF antennas used for heating plasmas may come into contact with contaminants from the plasma, Li was also deposited on the cathode surface through in-situ evaporation coating and its effect on the breakdown threshold was investigated. Results on surface roughness showed no significant dependence of the breakdown threshold on macroscopic surface roughness in the cathode arithmetic roughness range of ˜77-1139nm. Microscopic surface features such as grain boundaries, impurities and imperfections may play a more visible role in affecting the vacuum breakdown.

  16. Investigation on critical breakdown electric field of hot sulfur hexafluoride/carbon tetrafluoride mixtures for high voltage circuit breaker applications

    NASA Astrophysics Data System (ADS)

    Wang, Weizong; Murphy, Anthony B.; Rong, Mingzhe; Looe, Hui M.; Spencer, Joseph W.

    2013-09-01

    Sulfur hexafluoride (SF6) gas, widely used in high-voltage circuit breakers, has a high global warming potential and hence substitutes are being sought. The use of a mixture of carbon tetrafluoride (CF4) and SF6 is examined here. It is known that this reduces the breakdown voltage at room temperature. However, the electrical breakdown in a circuit breaker after arc interruption occurs in a hot gas environment, with a complicated species composition because of the occurrence of dissociation and other reactions. The likelihood of breakdown depends on the electron interactions with all these species. The critical reduced electric field strength (the field at which breakdown can occur, relative to the number density) of hot SF6/CF4 mixtures corresponding to the dielectric recovery phase of a high voltage circuit breaker is calculated in the temperature range from 300 K to 3500 K. The equilibrium compositions of hot SF6/CF4 mixtures under different mixing fractions were determined based on Gibbs free energy minimization. Full sets of improved cross sections for interactions between electrons and the species present are presented. The critical reduced electric field strength of these mixtures was obtained by balancing electron generation and loss mechanisms. These were evaluated using the electron energy distribution function derived from the Boltzmann transport equation under the two-term approximation. The result indicates that critical electric field strength decreases with increasing heavy-particle temperature from 1500 to 3500 K. Good agreement was found between calculations for pure hot SF6 and pure hot CF4 and experimental results and previous calculations. The addition of CF4 to SF6 was found to increase the critical reduced electric field strength for temperatures above 1500 K, indicating the potential of replacing SF6 by SF6/CF4 mixtures in high-voltage circuit breakers.

  17. New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage

    NASA Astrophysics Data System (ADS)

    Li, Qi; Li, Hai-Ou; Tang, Ning; Zhai, Jiang-Hui; Song, Shu-Xiang

    2015-03-01

    A new SOI power device with multi-region high-concentration fixed charge (MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer (BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS. Project supported by the State Key Laboratory of Electronic Thin Films and Integrated Devices of China (Grant No. KFJJ201205), the Department of Education Project of Guangxi Province, China (Grant No. 201202ZD041), the Postdoctoral Science Foundation Project of China (Grant Nos. 2012M521127 and 2013T60566), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

  18. Breakdown voltage of metal-oxide resistors in liquid argon

    SciTech Connect

    Bagby, L. F.; Gollapinni, S.; James, C. C.; Jones, B. J.P.; Jostlein, H.; Lockwitz, S.; Naples, D.; Raaf, J. L.; Rameika, R.; Schukraft, A.; Strauss, T.; Weber, M. S.; Wolbers, S. A.

    2014-11-07

    We characterized a sample of metal-oxide resistors and measured their breakdown voltage in liquid argon by applying high voltage (HV) pulses over a 3 second period. This test mimics the situation in a HV-divider chain when a breakdown occurs and the voltage across resistors rapidly rise from the static value to much higher values. All resistors had higher breakdown voltages in liquid argon than their vendor ratings in air at room temperature. Failure modes range from full destruction to coating damage. In cases where breakdown was not catastrophic, subsequent breakdown voltages were lower in subsequent measuring runs. One resistor type withstands 131 kV pulses, the limit of the test setup.

  19. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

    PubMed Central

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed. PMID:25206318

  20. Spark gap with low breakdown voltage jitter

    DOEpatents

    Rohwein, G.J.; Roose, L.D.

    1996-04-23

    Novel spark gap devices and electrodes are disclosed. The novel spark gap devices and electrodes are suitable for use in a variety of spark gap device applications. The shape of the electrodes gives rise to local field enhancements and reduces breakdown voltage jitter. Breakdown voltage jitter of approximately 5% has been measured in spark gaps according the invention. Novel electrode geometries and materials are disclosed. 13 figs.

  1. Spark gap with low breakdown voltage jitter

    DOEpatents

    Rohwein, Gerald J.; Roose, Lars D.

    1996-01-01

    Novel spark gap devices and electrodes are disclosed. The novel spark gap devices and electrodes are suitable for use in a variety of spark gap device applications. The shape of the electrodes gives rise to local field enhancements and reduces breakdown voltage jitter. Breakdown voltage jitter of approximately 5% has been measured in spark gaps according the invention. Novel electrode geometries and materials are disclosed.

  2. Vacuum-chamber simulation of high-voltage breakdown in space

    NASA Astrophysics Data System (ADS)

    Logue, Andrew C.; Gordon, Lloyd B.

    1994-05-01

    The mockup channel tests for Space Power Experiments Aboard Rocket (SPEAR) I, SPEAR II, and SPEAR III will be examined in this paper. Specifically, high voltage results of mockup chamber tests will be compared with results of the flight hardware chamber tests and flight experiments. The authors will analyze the results obtained through the different phases of each of these programs and determine the effectiveness of the simulations that were performed in the vacuum chambers.

  3. Basic study of transient breakdown voltage in solid dielectric cables

    NASA Astrophysics Data System (ADS)

    Bahder, G.; Sosnowski, M.; Katz, C.

    1980-09-01

    A comprehensive review of the technical and scientific publications relating to crosslinked polyethylene (XLPE) and ethylene propylene rubber (EPR) insulated cables revealed that there is very little known with respect to the life expectancy, the final factory voltage test background and the mechanism of voltage breakdown of these cables. A new methodology for the investigation of breakdown voltages of XLPE and EPR insulated cables was developed which is based on the investigation of breakdown voltages at various voltage transients such as unipolarity pulses and dual-polarity pulses, and a.c. voltage at power and high frequency. Also, a new approach to statistical testing was developed which allows one to establish a correlation among the breakdown voltages obtained with various voltage transients. Finally, a method for the determination of threshold voltage regardless of the magnitude of apparent charge was developed. A model of breakdown and electrical aging of XLPE and EPR insulated cables was developed as well as life expectancy characteristics for high voltage stress XLPE insulated cables operated in a dry environment at room temperature and at 900 C.

  4. Investigations of the electrical breakdown properties of insulator materials used in high voltage vacuum diodes

    SciTech Connect

    Shurter, R.P.; Carlson, R.L.; Melton, J.G.

    1993-08-01

    The Injector for the proposed Dual-Axis Radiographic Hydrodynamic Testing (DARHT) Facility at Los Alamos utilizes a monolithic insulator deployed in a radial configuration. The 1.83-m-diam {times} 25.4-cm-thick insulator with embedded grading rings separates the output oil transmission line from the vacuum vessel that contains the re-entrant anode and cathode assemblies. Although much work has been done by the pulse power community in studying surface flash-over of insulating materials used in both axial and radial configurations, dendrite growth at the roots of grading rings embedded in materials suitable for very large insulators is less well characterized. Degradation of several acrylic insulators has been observed in the form of dendrites growing at the roots of the grading rings for large numbers (100`s) of pulses on the prototype DARHT Injector and other machines using similar radial geometries. In a few cases, these dendrites have led to catastrophic bulk breakdown of the acrylic between two grading rings making the insulator a costly loss. Insulating materials under investigation are acrylic (Lucite), epoxy (Furane), and cross-linked polystyrene (Rexolite); each of these materials has its own particular mechanical and electrical merits. All of these materials have been cast and machined into the required large size for the Injector. Test methods and the results of investigations into the breakdown strength of various interface geometries and the susceptibility of these materials to dendrite growth are reported.

  5. High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V

    NASA Astrophysics Data System (ADS)

    Wei, Cheng; Yan, Zhao; Hanchao, Gao; Chen, Chen; Naibin, Yang

    2012-01-01

    An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1 × 15 μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BVCEO ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.

  6. Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage

    SciTech Connect

    Hwang, Ya-Hsi; Li, Shun; Hsieh, Yueh-Ling; Ren, Fan; Pearton, Stephen J.; Patrick, Erin; Law, Mark E.; Smith, David J.

    2014-02-24

    The effect of proton irradiation on the off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates was studied by irradiating protons from the backside of the samples through via holes fabricated directly under the active area of the HEMTs. There was no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for HEMTs irradiated with 275 keV protons, for which the defects created by the proton irradiation were intentionally placed in the GaN buffer. HEMTs with defects positioned in the 2 dimensional electron gas channel region and AlGaN barrier using 330 keV protons not only showed degradation of both drain current and extrinsic transconductance but also exhibited an improvement of the off-state drain breakdown voltage. Finite-element simulations showed the enhancement of the latter were due to a reduction in electric field strength at the gate edges by introduction of charged defects.

  7. Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation

    NASA Astrophysics Data System (ADS)

    Futong, Chu; Chao, Chen; Xingzhao, Liu

    2014-03-01

    A novel AlGaN/GaN high electric mobility transistor (HEMT) with polyimide (PI)/chromium (Cr) as the passivation layer is proposed for enhancing breakdown voltage and its DC performance is also investigated. The Cr nanoparticles firstly introduced in PI thin films by the co-evaporation can be used to increase the permittivity of PI film. The high-permittivity PI/Cr passivation acting as field plate can suppress the fringing electric field peak at the drain-side edge of the gate electrode. This mechanism is demonstrated in accord with measured results. The experimental results show that in comparison with the AlGaN/GaN HEMTs without passivation, the breakdown voltage of HEMTs with the PI/Cr composite thin films can be significantly improved, from 122 to 248 V.

  8. Design and simulation of high-breakdown-voltage GaN-based vertical field-effect transistor with interfacial charge engineering

    NASA Astrophysics Data System (ADS)

    Du, Jiangfeng; Liu, Dong; Bai, Zhiyuan; Luo, Qian; Yu, Qi

    2016-05-01

    A high-breakdown-voltage GaN-based vertical field-effect transistor with negative fixed interfacial charge engineering (GaN ICE-VHFET) is proposed in this work. The negative charge inverts an n-GaN buffer layer along the oxide/GaN interface, inducing a vertical hole layer. Thus, the entire buffer layer consists of a p+-hole inversion layer and an n-pillar buffer layer, and the p-pillar laterally depletes the n-GaN buffer layer, and the electric field distribution becomes more uniform. Simulation results show that the breakdown voltage of the GaN ICE-VHFET increases by 193% and the on-resistance of such a device is still very low when compared with those of conventional vertical FETs. Its figure of merit even exceeds the GaN one-dimensional limit.

  9. Dual trench AlGaN/GaN HEMT on SiC substrate: A novel device to improve the breakdown voltage and high power performance

    NASA Astrophysics Data System (ADS)

    Ghaffari, Majid; Orouji, Ali A.

    2016-06-01

    In this paper, an excellent performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with a dual trench technique (DT-HEMT) is proposed. In the proposed technique, the dual trench between the buffer layer and the nucleation layer is created. Both the trenches are made of Gallium Nitride. A trench is created under the source region to increase the breakdown voltage. In addition, the drain current will improve due to a created trench in below the gate region. The DC and RF characteristics of the DT-HEMT are investigated. Also, the characteristics of the proposed structure compared with the characteristics of a conventional structure (C-HEMT). Our results indicate that the dual trench technique has excellent impacts on the device characteristics, especially on the drain current, breakdown voltage, and maximum output power density. The breakdown voltage, drain current, and maximum power density of DT-HEMT structure improve 56 %, 52 %, and 310 % in comparison with the C-HEMT, respectively. Also, using the dual trench technique, the maximum oscillation frequency, maximum available gain, short channel effect, maximum DC transconductance, and output resistance of the DT-HEMT structure will increase. Therefore, the proposed HEMT structure shows outstanding electrical properties compared to similar devices are based on conventional structures.

  10. High gradient RF breakdown studies

    NASA Astrophysics Data System (ADS)

    Laurent, Lisa Leanne

    Higher accelerating gradients are required by future demands for TeV electron linear colliders. With higher energy comes the challenge of handling stronger electromagnetic fields in the accelerator structures and in the microwave sources that supply the power. A limit on the maximum field gradient is imposed by rf electrical breakdown. Investigating methods to achieve higher gradients and to better understand the mechanisms involved in the rf breakdown process has been the focal point of this study. A systematic series of rf breakdown experiments have been conducted at Stanford Linear Accelerator Center utilizing a transmission cavity operating in the TM020 mode. A procedure was developed to examine the high gradient section of the cavity in an electron microscope. The results have revealed that breakdown asymmetry exists between opposing high gradient surfaces. During breakdown, a plasma formation is detected localized near the surface with no visible evidence of an arc traversing the gap. These findings support the theory that high frequency rf breakdown is a single surface phenomenon. Other results from this study have shown that breakdown can occur at relatively low voltages when surface irregularities exist and along grain boundaries. A series of steps have been developed through this study that have significantly reduced the number of breakdowns that occur along grain boundaries. Testing under various vacuum conditions (10-11--10 -5 Torr) have revealed that while the breakdown threshold remained the same, the field emitted current density increased by almost two orders of magnitude. This suggests that the total field emitted current density is not the critical parameter in the initiation of high frequency vacuum breakdown. In the course of this study, microparticles were carefully tracked before and after rf processing. The outcome of this research suggests that expensive cleanroom facilities may not offer any advantage over practicing good cleaning and

  11. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    NASA Astrophysics Data System (ADS)

    Sun, Shichuang; Fu, Kai; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Qi, Zhiqiang; Li, Shuiming; Sun, Qian; Cai, Yong; Dai, Jiangnan; Chen, Changqing; Zhang, Baoshun

    2016-01-01

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal-organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 1014 cm-2) and 90 keV (dose: 1 × 1014 cm-2), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current IDSmax at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance gmmax was 83 mS/mm.

  12. The effect of external visible light on the breakdown voltage of a long discharge tube

    NASA Astrophysics Data System (ADS)

    Shishpanov, A. I.; Ionikh, Yu. Z.; Meshchanov, A. V.

    2016-06-01

    The breakdown characteristics of a discharge tube with a configuration typical of gas-discharge light sources and electric-discharge lasers (a so-called "long discharge tube") filled with argon or helium at a pressure of 1 Torr have been investigated. A breakdown has been implemented using positive and negative voltage pulses with a linear leading edge having a slope dU/ dt ~ 10-107 V/s. Visible light from an external source (halogen incandescent lamp) is found to affect the breakdown characteristics. The dependences of the dynamic breakdown voltage of the tube on dU/ dt and on the incident light intensity are measured. The breakdown voltage is found to decrease under irradiation of the high-voltage anode of the tube in a wide range of dU/ dt. A dependence of the effect magnitude on the light intensity and spectrum is obtained. Possible physical mechanisms of this phenomenon are discussed.

  13. Breakdown voltage of discrete capacitors under single-pulse conditions

    NASA Technical Reports Server (NTRS)

    Domingos, H.; Scaturro, J.; Hayes, L.

    1981-01-01

    For electrostatic capacitors the breakdown voltage is inherently related to the properties of the dielectric, with the important parameters being the dielectric field strength which is related to the dielectric constant and the dielectric thickness. These are not necessarily related to the capacitance value and the rated voltage, but generally the larger values of capacitance have lower breakdown voltages. Foil and wet slug electrolytics can withstand conduction currents pulses without apparent damage (in either direction for foil types). For solid tantalums, damage occurs whenever the capacitor charges to the forming voltage.

  14. Measuring breakdown voltage for objectively detecting ignition in fire research

    NASA Astrophysics Data System (ADS)

    Ochoterena, R.; Försth, M.; Elfsberg, Mattias; Larsson, Anders

    2013-10-01

    This paper presents a method intended for detecting the initiation of combustion and the presence of smoke in confined or open spaces by continuously applying an intermittent high-voltage pulse between the electrodes. The method is based on an electrical circuit which generates an electrical discharge measuring simultaneously the breakdown voltage between the electrodes. It has been successfully used for the detection of particle-laden aerosols and flames. However, measurements in this study showed that detecting pyrolysis products with this methodology is challenging and arduous. The method presented here is robust and exploits the necessity of having an ignition system which at the same time can automatically discern between clean air, flames or particle-laden aerosols and can be easily implemented in the existing cone calorimeter with very minor modifications.

  15. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Xue, JunShuai; Zhang, JinCheng; Hao, Yue

    2016-01-01

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm2/V s along with a sheet carrier density of 1.88 × 1013 cm-2 were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  16. Analysis of the breakdown voltage in SOI and SOS technologies

    NASA Astrophysics Data System (ADS)

    Roig, J.; Vellvehi, M.; Flores, D.; Rebollo, J.; Millan, J.; Krishnan, S.; De Souza, M. M.; Sankara Narayanan, E. M.

    2002-02-01

    The aim of the paper is to analyse the breakdown voltage performance of lateral power devices in silicon on insulator (SOI) technologies. Both silicon on oxide (termed SOI as per the convention) and silicon on sapphire (SOS) technologies have been considered. Detailed numerical modelling together with analytical evaluation has been carried out on lateral devices employing uniformly doped and variation in lateral doping drift regions. The results indicate that existing theories to predict breakdown voltage are valid only in the case of ultrathin insulator layers and fail when ultrathick layers are considered. Predicted results for devices with ultrathick dielectric layers, as it is the case in SOS technology, are presented. Moreover, the breakdown voltage sensitivity with respect to the SOI layer and dielectric thickness is also analysed.

  17. High voltage breakdown studies of sol-gel MgO-ZrO 2 insulation coatings under various pressures at 298 K and 77 K

    NASA Astrophysics Data System (ADS)

    Cakiroglu, O.; Arda, L.; Hascicek, Y. S.

    2005-06-01

    High voltage breakdown (HV bd) tests were performed to investigate electrical properties of high temperature MgO-ZrO 2 insulation coatings on long-length stainless steel (SS) tapes under various pressures at room temperature (298 K) and liquid nitrogen temperature (77 K) for applications of HTS/LTS coils and magnets. After solutions were prepared from Mg and Zr based precursors, solvent and chelating agent, the coating were fabricated on SS substrates using reel-to-reel sol-gel technique. Coating thicknesses for 4, 8, and 9 dippings were about 7, 12, and 13 μm, respectively, and thickness of epoxy-impregnated samples (stycast 2850 FT/24 LV) were measured to be 32 μm. The pressure from 0 GPa to 0.54 GPa was applied on to test couples, the stycast thicknesses between the layers were varied 32-20 μm. Thickness of the coatings and epoxy-impregnated using stycast were determined by using environmental scanning electron microscopy (ESEM). The resistance, capacitance, and HV bd of the samples were measured by using standard machines HP 439 a high resistance meter, 161 analog digital capacitance meter and model 200-02R high voltage power supply, respectively. Electric strength and dielectric constant were calculated at 298 and 77 K under various pressures. The high HV bd, and electric strength values of the samples were 2.84 kV and 45.91 kV/mm, respectively. ESEM observation revealed that arcing spots in the insulation coatings become larger and deeper for higher HV bd’s.

  18. An AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient

    NASA Astrophysics Data System (ADS)

    Xie, Gang; Tang, Cen; Wang, Tao; Guo, Qing; Zhang, Bo; Sheng, Kuang; Wai, Tung Ng

    2013-02-01

    An AlGaN/GaN high-electron mobility transistor (HEMT) with a novel source-connected air-bridge field plate (AFP) is experimentally verified. The device features a metal field plate that jumps from the source over the gate region and lands between the gate and drain. When compared to a similar size HEMT device with a conventional field plate (CFP) structure, the AFP not only minimizes the parasitic gate to source capacitance, but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage current. In a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm, three times higher forward blocking voltage of 375 V was obtained at VGS = -5 V. In contrast, a similar sized HEMT with a CFP can only achieve a breakdown voltage no higher than 125 V using this process, regardless of device dimensions. Moreover, a temperature coefficient of 0 V/K for the breakdown voltage is observed. However, devices without a field plate (no FP) and with an optimized conventional field plate (CFP) exhibit breakdown voltage temperature coefficients of -0.113 V/K and -0.065 V/K, respectively.

  19. Ion behavior and interelectrode breakdown voltage of a drift tube

    NASA Astrophysics Data System (ADS)

    Geng, Hao; Zhao, Zhong-Jun; Duan, Yi-Xiang

    2015-05-01

    We experimentally studied ion behavior and interelectrode breakdown voltage. The ion behavior of a drift tube directly influences the detection of ion intensity, and then influences the detection sensitivity of a system. Interelectrode voltage and pressure directly influence the ion behavior. Gas discharge between electrodes influences the adjustments required for interelectrode voltage. The experimental results show: ion intensity increases exponentially with the increment of voltage between drift electrodes; ion intensity decreases exponentially as pressure increases; with the increment of pressure, the breakdown voltage at first decreases, and then increases; ion injection has a significant influence on breakdown voltage, and this influence depends on the pressure and shapes of the electrodes. We explain the results above through assumptions and by mathematical methods. Supported by Financial Support from the National Major Scientific Instruments and Equipment Development Special Funds (2011YQ030113), National Recruitment Program of Global Experts (NRPGE), the Hundred Talents Program of Sichuan Province (HTPSP) and the Startup Funding of Sichuan University for Setting up the Research Center of Analytical Instrumentation

  20. Design issues for lateral double-diffused metal-oxide-semiconductor with higher breakdown voltage.

    PubMed

    Sung, Kunsik; Won, Taeyoung

    2013-05-01

    In this paper, we discuss a new High-Side nLDMOSFET whose breakdown voltage is over 100 V while meeting the thermal budget for the conventional process. The proposed n-channel lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) has a feature in that the structure comprises a gap of 5 microm between the DEEP N-WELL and the center of the source, the surface of which is implanted by the NADJUST-layer for high breakdown voltage and simultaneously the low specific on-resistance. The computer simulation of the proposed High-Side nLDMOS exhibits BVdss of 126 V and R(ON,sp) of as low as 2.50 m(omega) x cm2. The NBL, which plays a significant role as a blocking layer against the punch-through seems to function as a hurdle for increasing the breakdown voltage. PMID:23858840

  1. Note: Measuring breakdown characteristics during the hot re-ignition of high intensity discharge lamps using high frequency alternating current voltage.

    PubMed

    van den Bos, R A J M; Sobota, A; Manders, F; Kroesen, G M W

    2013-04-01

    To investigate the cold and hot re-ignition properties of High Intensity Discharge (HID) lamps in more detail an automated setup was designed in such a way that HID lamps of various sizes and under different background pressures can be tested. The HID lamps are ignited with a ramped sinusoidal voltage signal with frequencies between 60 and 220 kHz and with amplitude up to 7.5 kV. Some initial results of voltage and current measurements on a commercially available HID lamp during hot and cold re-ignition are presented. PMID:23635237

  2. Effects of load voltage on voltage breakdown modes of electrical exploding aluminum wires in air

    SciTech Connect

    Wu, Jian; Li, Xingwen Yang, Zefeng; Wang, Kun; Chao, Youchuang; Shi, Zongqian; Jia, Shenli; Qiu, Aici

    2015-06-15

    The effects of the load voltage on the breakdown modes are investigated in exploding aluminum wires driven by a 1 kA, 0.1 kA/ns pulsed current in air. From laser probing images taken by laser shadowgraphy, schlieren imaging, and interferometry, the position of the shockwave front, the plasma channel, and the wire core edge of the exploding product can be determined. The breakdown mode makes a transition from the internal mode, which involves breakdown inside the wire core, to the shunting mode, which involves breakdown in the compressed air, with decreasing charging voltage. The breakdown electrical field for a gaseous aluminum wire core of nearly solid density is estimated to be more than 20 kV/cm, while the value for gaseous aluminum of approximately 0.2% solid density decreases to 15–20 kV/cm. The breakdown field in shunting mode is less than 20 kV/cm and is strongly affected by the vaporized aluminum, the desorbed gas, and the electrons emitted from the wire core during the current pause. Ohmic heating during voltage collapses will induce further energy deposition in the current channel and thus will result in different expansion speeds for both the wire core and the shockwave front in the different modes.

  3. Effects of load voltage on voltage breakdown modes of electrical exploding aluminum wires in air

    NASA Astrophysics Data System (ADS)

    Wu, Jian; Li, Xingwen; Yang, Zefeng; Wang, Kun; Chao, Youchuang; Shi, Zongqian; Jia, Shenli; Qiu, Aici

    2015-06-01

    The effects of the load voltage on the breakdown modes are investigated in exploding aluminum wires driven by a 1 kA, 0.1 kA/ns pulsed current in air. From laser probing images taken by laser shadowgraphy, schlieren imaging, and interferometry, the position of the shockwave front, the plasma channel, and the wire core edge of the exploding product can be determined. The breakdown mode makes a transition from the internal mode, which involves breakdown inside the wire core, to the shunting mode, which involves breakdown in the compressed air, with decreasing charging voltage. The breakdown electrical field for a gaseous aluminum wire core of nearly solid density is estimated to be more than 20 kV/cm, while the value for gaseous aluminum of approximately 0.2% solid density decreases to 15-20 kV/cm. The breakdown field in shunting mode is less than 20 kV/cm and is strongly affected by the vaporized aluminum, the desorbed gas, and the electrons emitted from the wire core during the current pause. Ohmic heating during voltage collapses will induce further energy deposition in the current channel and thus will result in different expansion speeds for both the wire core and the shockwave front in the different modes.

  4. P-Channel Lateral Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor with Split N-Type Buried Layer for High Breakdown Voltage and Low Specific On-Resistance

    NASA Astrophysics Data System (ADS)

    Liaw, Chorng-Wei; Chang, Ching-Hung; Lin, Ming-Jang; King, Ya-Ching; Hsu, Charles Ching-Hsiang; Lin, Chrong Jung

    2007-07-01

    Many high voltage complementary metal-oxide-semiconductor (HV-CMOS) processes are modified from a standard 5 V CMOS process by adding an N-type heavily doped layer under the P-well of a HV-PMOS drain terminal to isolate a high voltage P-well from a grounded P-substrate. The limitation of breakdown voltage is dominated by P-well concentration and junction depth. For designing a certain breakdown voltage (\\mathit{BV}dss) for a HV-PMOS, the original 5 V CMOS P-well concentration should be decreased, which could degrade 5 V CMOS characteristics, such as NMOS punch through and latch-up immunity. In this study, we demonstrate a novel HV-PMOS based on a split N-type buried layer (NBL), which provides a high \\mathit{BV}dss in a HV-CMOS process. The newly proposed device with NBL split under the P-well of a drain electrode increases \\mathit{BV}dss without degrading specific on-resistance (Ron,sp) and any added process complexity. From this result, P-well concentration could be increased to improve both 5 V NMOS characteristics and HV-PMOS Ron,sp.

  5. Voltage breakdown between closely spaced electrodes over polymeric insulator surfaces in air

    NASA Astrophysics Data System (ADS)

    Gray, Eoin W.; Harrington, Daniel J.

    1982-01-01

    Voltage breakdowns of some narrow gap electrodes [2-10 mil (0.05-0.25 mm)] on polymeric insulator surfaces (epoxy-glass and triazine) have been examined over the pressure range from atmospheric pressure to 127 Torr and are shown to be an air breakdown modified by the presence of the insulator. Breakdown values as a function of the number of the breakdown and discharge energy level were also examined. In the worst case the breakdown voltage was observed to decrease by approximately 1300 V after about five successive breakdowns. The breakdown voltage between narrowly spaced metallic contacts on dielectric surfaces has been assumed to exhibit a Gaussian distribution. Non-Gaussian, bimodal distributions have been observed in the present work. These bimodal distributions, found on fine line epoxy-glass and triazine printed wiring boards, and attempts for explanation in terms of the flashover discharge initiating mechanisms, including the effects of ultraviolet radiation and a negative-ion flux on breakdown, are described. Negative ions appear to reduce the standard deviation but do not reduce the breakdown voltage. Ultraviolet radiation reduces both the standard deviation and the breakdown voltage. Increasing the conductor overlap distance (line length) reduced the breakdown voltage.

  6. Breakdown voltage determination of gaseous and near cryogenic fluids with application to rocket engine ignition

    NASA Astrophysics Data System (ADS)

    Nugent, Nicholas Jeremy

    Liquid rocket engines extensively use spark-initiated torch igniters for ignition. As the focus shifts to longer missions that require multiple starts of the main engines, there exists a need to solve the significant problems associated with using spark-initiated devices. Improving the fundamental understanding of predicting the required breakdown voltage in rocket environments along with reducing electrical noise is necessary to ensure that missions can be completed successfully. To better understand spark ignition systems and add to the fundamental research on spark development in rocket applications, several parameter categories of interest were hypothesized to affect breakdown voltage: (i) fluid, (ii) electrode, and (iii) electrical. The fluid properties varied were pressure, temperature, density and mass flow rate. Electrode materials, insert electrode angle and spark gap distance were the electrode properties varied. Polarity was the electrical property investigated. Testing how breakdown voltage is affected by each parameter was conducted using three different isolated insert electrodes fabricated from copper and nickel. A spark plug commonly used in torch igniters was the other electrode. A continuous output power source connected to a large impedance source and capacitance provided the pulsing potential. Temperature, pressure and high voltage measurements were recorded for the 418 tests that were successfully completed. Nitrogen, being inert and similar to oxygen, a propellant widely used in torch igniters, was used as the fluid for the majority of testing. There were 68 tests completed with oxygen and 45 with helium. A regression of the nitrogen data produced a correction coefficient to Paschen's Law that predicts the breakdown voltage to within 3000 volts, better than 20%, compared to an over prediction on the order of 100,000 volts using Paschen's Law. The correction coefficient is based on the parameters most influencing breakdown voltage: fluid

  7. Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties. Part 2; Dynamic Breakdown Properties

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Fazi, Christian

    1999-01-01

    This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

  8. HIGH VOLTAGE GENERATOR

    DOEpatents

    Zito, G.V.

    1959-04-21

    This patent relates to high voltage supply circuits adapted for providing operating voltages for GeigerMueller counter tubes, and is especially directed to an arrangement for maintaining uniform voltage under changing conditions of operation. In the usual power supply arrangement for counter tubes the counter voltage is taken from across the power supply output capacitor. If the count rate exceeds the current delivering capaciiy of the capacitor, the capacitor voltage will drop, decreasing the counter voltage. The present invention provides a multivibrator which has its output voltage controlled by a signal proportional to the counting rate. As the counting rate increases beyond the current delivering capacity of the capacitor, the rectified voltage output from the multivibrator is increased to maintain uniform counter voltage.

  9. High voltage research (breakdown strengths of gaseous and liquid insulators) and environmental effects of dielectric gases. Semiannual report, October 1, 1979-March 31, 1980

    SciTech Connect

    Christophorou, L.G.; James, D.R.; Pai, R.Y.

    1980-08-01

    Topics covered include basic studies of gaseous dielectrics, direct current breakdown strengths of gases/mixtures, environmental effects studies and decomposition analyses, impulse studies, breakdown strengths of binary mixtures with concentric cylinder geometry, and a discussion of the experimental apparatus. (GHT)

  10. Breakdown voltage reliability improvement in gas-discharge tube surge protectors employing graphite field emitters

    NASA Astrophysics Data System (ADS)

    Žumer, Marko; Zajec, Bojan; Rozman, Robert; Nemanič, Vincenc

    2012-04-01

    Gas-discharge tube (GDT) surge protectors are known for many decades as passive units used in low-voltage telecom networks for protection of electrical components from transient over-voltages (discharging) such as lightning. Unreliability of the mean turn-on DC breakdown voltage and the run-to-run variability has been overcome successfully in the past by adding, for example, a radioactive source inside the tube. Radioisotopes provide a constant low level of free electrons, which trigger the breakdown. In the last decades, any concept using environmentally harmful compounds is not acceptable anymore and new solutions were searched. In our application, a cold field electron emitter source is used as the trigger for the gas discharge but with no activating compound on the two main electrodes. The patent literature describes in details the implementation of the so-called trigger wires (auxiliary electrodes) made of graphite, placed in between the two main electrodes, but no physical explanation has been given yet. We present experimental results, which show that stable cold field electron emission current in the high vacuum range originating from the nano-structured edge of the graphite layer is well correlated to the stable breakdown voltage of the GDT surge protector filled with a mixture of clean gases.

  11. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    SciTech Connect

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  12. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    NASA Astrophysics Data System (ADS)

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-03-01

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as -2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to -15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  13. Comparative evaluation of breakdown strength of thin insulating materials under fast transient voltages

    SciTech Connect

    Rajan, J.S.; Dwarakanath, K.

    1996-12-31

    Laboratory methods of generating fast transient over-voltages are discussed in this paper. The results of the breakdown studies carried out with the Transmission line model Generator using plastic materials is presented. The breakdown is observed to be a fast front phenomenon and the electrode effects are critical. The magnitude of the breakdown voltage is one order higher than the corresponding ac and dc values.

  14. Radiatively heated high voltage pyroelectric crystal pulser

    NASA Astrophysics Data System (ADS)

    Antolak, A. J.; Chen, A. X.; Leung, K.-N.; Morse, D. H.; Raber, T. N.

    2014-01-01

    Thin lithium tantalate pyroelectric crystals in a multi-stage pulser were heated by quartz lamps during their charging phase to generate high voltage pulses. The charging voltage was determined empirically based on the measured breakdown voltage in air and verified by the induced breakdown voltage of an external high voltage power supply. A four-stage pyroelectric crystal device generated pulse discharges of up to 86 kV using both quartz lamps (radiative) and thermoelectric (conductive) heating. Approximately 50 mJ of electrical energy was harvested from the crystals when radiatively heated in air, and up to 720 mJ was produced when the crystals were submerged in a dielectric fluid. It is anticipated that joule-level pulse discharges could be obtained by employing additional stages and optimizing the heating configuration.

  15. High Voltage SPT Performance

    NASA Technical Reports Server (NTRS)

    Manzella, David; Jacobson, David; Jankovsky, Robert

    2001-01-01

    A 2.3 kW stationary plasma thruster designed to operate at high voltage was tested at discharge voltages between 300 and 1250 V. Discharge specific impulses between 1600 and 3700 sec were demonstrated with thrust between 40 and 145 mN. Test data indicated that discharge voltage can be optimized for maximum discharge efficiency. The optimum discharge voltage was between 500 and 700 V for the various anode mass flow rates considered. The effect of operating voltage on optimal magnet field strength was investigated. The effect of cathode flow rate on thruster efficiency was considered for an 800 V discharge.

  16. Al00.3Ga0.7N PN diode with breakdown voltage >1600 V

    DOE PAGESBeta

    Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; Dickerson, J. R.; Crawford, M. H.; King, M. P.; Moseley, M. W.; Wierer, J. J.; Kaplar, R. J.

    2016-07-21

    Demonstration of Al00.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm2 is limited by the lateral conductivity of the n-type contact layer required by the front-surface contactmore » geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (Vbr2/Rspec,on) of 150 MW/cm2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.« less

  17. A quasi-analytical breakdown voltage model in four-layer punch-through TVS devices

    NASA Astrophysics Data System (ADS)

    Urresti, Jesus; Hidalgo, Salvador; Flores, David; Roig, Jaume; Rebollo, José; Mazarredo, Imanol

    2005-08-01

    A quasi-analytical model addressed to predict the breakdown voltage in four-layer transient voltage suppressor (TVS) diodes based on the punch-through effect is reported in this paper. For breakdown voltage in excess of 1 V, a closed form expression is derived. In addition, the three-layer TVS diode can also be described with the developed model. Finally, results obtained from the model are in good agreement with simulation and experimental data.

  18. Experimental Study on the Dielectric Breakdown Voltage of the Insulating Oil Mixed with Magnetic Nanoparticles

    NASA Astrophysics Data System (ADS)

    Lee, Jong-Chul; Kim, Woo-Young

    In this study, we have measured the dielectric breakdown voltage of transformer oil-based nanofluids in accordance with IEC 156 standard and have investigated the dielectric breakdown performance with the application of an external magnetic field and different volume concentrations of magnetic nanoparticles. It is confirmed that the dielectric breakdown voltage of pure transformer oil is about 10 kV with a gap distance of 1 mm between electrodes. In the case of our transformer oil-based nanofluids with 0.08% < Φ < 0.39% (Φ means the volume concentration of magnetic nanoparticles in the fluid), the dielectric breakdown voltage is three times higher than that of pure transformer oil. Furthermore, when the external magnetic field is applied under the experimental vessel, the dielectric breakdown voltage of the nanofluids is above 40 kV, which is 30% higher than that without the external magnetic field.

  19. HIGH VOLTAGE REGULATOR

    DOEpatents

    Wright, B.T.

    1959-06-01

    A high voltage regulator for use with calutrons is described which rapidly restores accelerating voltage after a sudden drop such as is caused by sparking. The rapid restoration characteristic prevents excessive contamination of lighter mass receiver pockets by the heavier mass portion of the beam. (T.R.H.)

  20. Electrical system for measurement of breakdown voltage of vacuum and gas-filled tubes using a dynamic method

    NASA Astrophysics Data System (ADS)

    Pejović, Milić M.; Milosavljević, Čedomir S.; Pejović, Momčilo M.

    2003-06-01

    This article describes an electrical system aimed at measuring and data acquisition of breakdown voltages of vacuum and gas-filled tubes. The measurements were performed using a nitrogen-filled tube at 4 mbar pressure. Based on the measured breakdown voltage data as a function of the applied voltage increase rate, a static breakdown voltage is estimated for the applied voltage gradient ranging from 0.1 to 1 V s-1 and from 1 to 10 V s-1. The histograms of breakdown voltages versus applied voltage increase rates from 0.1 and 0.5 V s-1 are approximated by the probability density functions using a fitting procedure.

  1. Effect of the electrode material on the breakdown voltage and space charge distribution of propylene carbonate under impulse voltage

    NASA Astrophysics Data System (ADS)

    Yang, Qing; Jin, Yang; Sima, Wenxia; Liu, Mengna

    2016-04-01

    This paper reports three types of electrode materials (copper, aluminum, and stainless steel) that are used to measure the impulse breakdown voltage of propylene carbonate. The breakdown voltage of propylene carbonate with these electrode materials is different and is in decreasing order of stainless steel, copper, and aluminum. To explore how the electrode material affects the insulating properties of the liquid dielectric, the electric field distribution and space charge distribution of propylene carbonate under impulse voltage with the three electrode materials are measured on the basis of a Kerr electro-optic test. The space charge injection ability is highest for aluminum, followed by copper, and then the stainless steel electrodes. Furthermore, the electric field distortion rate decreased in the order of the aluminum, copper, and then the stainless steel electrode. This paper explains that the difference in the electric field distortion rate between the three electrode materials led to the difference in the impulse breakdown voltage of propylene carbonate.

  2. Effect of magnetic nanoparticles on the lightning impulse breakdown voltage of transformer oil

    NASA Astrophysics Data System (ADS)

    Ghasemi, J.; Jafarmadar, S.; Nazari, M.

    2015-09-01

    In this study, the lightning impulse breakdown voltage of magnetic nanofluids based on transformer mineral oil for use in power systems was reviewed. Magnetic nanofluids are obtained from dispersion of the magnetic nanoparticles (Fe3 O4) within transformer oil, as the base fluid. The Fe3 O4 nanoparticles, using a coprecipitation method, were synthesized, coated with a surfactant, and dispersed using an ultrasonic processor, within the uninhibited transformer mineral oil NYTRO LIBRA. The lightning impulse breakdown voltage was obtained using sphere-sphere electrodes in an experimental setup for nano-oil, in volume concentration of 0.1-0.6%. Results indicate improved lightning impulse breakdown voltage under optimal conditions. Increase in the lightning impulse breakdown voltage of the nano-oil is mainly due to the dielectric and magnetic properties of Fe3 O4 nanoparticles, acting as free electrons snapper, and reduce the rate of free electrons production in the ionization process.

  3. High voltage power supply

    NASA Technical Reports Server (NTRS)

    Ruitberg, A. P.; Young, K. M. (Inventor)

    1985-01-01

    A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

  4. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

    SciTech Connect

    Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal

    2014-03-24

    Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

  5. High voltage pulse generator

    DOEpatents

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  6. Breakdown Characteristics of SF6 Gas under Non-Standard Lightning Impulse Voltage

    NASA Astrophysics Data System (ADS)

    Yuasa, Sadayuki; Okabe, Shigemitsu

    Evaluation of lightning surge waveforms that actually enter into substations is important to rationalization of the test voltage of electric power equipment. The standard lightning impulse voltage (1.2/50μs) is used for factory tests. However, the actual lightning surge waveforms in substations are different from the standard lightning impulse voltage because they are complex and are usually superimposed with various oscillations. Insulation characteristics of SF6 gas under such complex voltages have not been sufficiently clarified. This paper deals with gap and spacer surface breakdown characteristics in SF6 gas under sub-microsecond single pulses. The minimum breakdown voltages (Vmin) under experimental waveforms are higher than Vmin under the standard lightning impulse voltage. The evaluation method, which deals duration applied over 80% of peak voltage, can also estimate the insulation characteristics under single pulses with various conditions as well as oscillations.

  7. High field breakdown characteristics of carbon nanotube thin film transistors.

    PubMed

    Gupta, Man Prakash; Behnam, Ashkan; Lian, Feifei; Estrada, David; Pop, Eric; Kumar, Satish

    2013-10-11

    The high field properties of carbon nanotube (CNT) network thin film transistors (CN-TFTs) are important for their practical operation, and for understanding their reliability. Using a combination of experimental and computational techniques we show how the channel geometry (length L(C) and width W(C)) and network morphology (average CNT length L(t) and alignment angle distribution θ) affect heat dissipation and high field breakdown in such devices. The results suggest that when WC ≥ L(t), the breakdown voltage remains independent of W(C) but varies linearly with L(C). The breakdown power varies almost linearly with both W(C) and L(C) when WC > L(t). We also find that the breakdown power is more susceptible to the variability in the network morphology compared to the breakdown voltage. The analysis offers new insight into the tunable heat dissipation and thermal reliability of CN-TFTs, which can be significantly improved through optimization of the network morphology and device geometry. PMID:24029606

  8. Experimental studies on power frequency breakdown voltage of CF3I/N2 mixed gas under different electric fields

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoxing; Xiao, Song; Han, Yefei; Cressault, Yann

    2016-02-01

    To verify the feasibility of replacing SF6 by CF3I/N2, we compared their power frequency breakdown performance with the influence of gas pressure, mixing ratio, and electric field utilization coefficient. Under different electric fields and mixing ratios, the power frequency breakdown voltage of CF3I/N2 increases linearly along with gas pressure. Besides, with the rise of the electric field utilization coefficient, the linear growth rate of breakdown voltage along with gas pressure gradually rises. The sensitivity of pure CF3I to electric field is particularly high and can be improved by the addition of N2. The mixture 30% CF3I/70% N2 at 0.3 MPa could replace pure SF6 in equipment requiring a low insulation, but the gas pressure or the content of CF3I need to be increased for higher insulation requirements.

  9. High voltage switches having one or more floating conductor layers

    SciTech Connect

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  10. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Guo, Yu-Feng; Xu, Yue; Lin, Hong; Yang, Hui; Hong, Yang; Yao, Jia-Fei

    2015-02-01

    A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device. Project supported by the National Natural Science Foundation of China (Grant No. 61076073) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20133223110003).

  11. High voltage distributed amplifier

    NASA Astrophysics Data System (ADS)

    Willems, D.; Bahl, I.; Wirsing, K.

    1991-12-01

    A high-voltage distributed amplifier implemented in GaAs MMIC technology has demonstrated good circuit performance over at least two octave bandwidth. This technique allows for very broadband amplifier operation with good efficiency in satellite, active-aperture radar, and battery-powered systems. Also, by increasing the number of FETs, the amplifier can be designed to match different voltage rails. The circuit does require a small amount of additional chip size over conventional distributed amplifiers but does not require power dividers or additional matching networks. This circuit configuration should find great use in broadband power amplifier design.

  12. Compact high voltage battery

    SciTech Connect

    Kinsman, G.F.; Land, E.H.

    1980-03-18

    A high voltage, low impedance laminar battery comprising a stack of series connected cells confined under pressure in a housing is described. The cells comprise laminar anodes, cathodes and separators. The cells are connected in series by laminar conductive intercell connectors. An annular spacer is associated with each cell. The spacers are separated by interdigitated ones of the separators and intercell connectors.

  13. Effects of Displacement Damage on the Time-Resolved Gain and Bandwidth of a Low Breakdown Voltage Si Avalanche Photodiode

    NASA Technical Reports Server (NTRS)

    Laird, Jamie S.; Onoda, Shinobu; Hirao, Toshio; Becker, Heidi; Johnston, Allan; Laird, Jamie S.; Itoh, Hisayoshi

    2006-01-01

    Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.

  14. High Voltage Insulation Technology

    NASA Astrophysics Data System (ADS)

    Scherb, V.; Rogalla, K.; Gollor, M.

    2008-09-01

    In preparation of new Electronic Power Conditioners (EPC's) for Travelling Wave Tub Amplifiers (TWTA's) on telecom satellites a study for the development of new high voltage insulation technology is performed. The initiative is mandatory to allow compact designs and to enable higher operating voltages. In a first task a market analysis was performed, comparing different materials with respect to their properties and processes. A hierarchy of selection criteria was established and finally five material candidates (4 Epoxy resins and 1 Polyurethane resin) were selected to be further investigated in the test program. Samples for the test program were designed to represent core elements of an EPC, the high voltage transformer and Printed Circuit Boards of the high voltage section. All five materials were assessed in the practical work flow of the potting process and electrical, mechanical, thermal and lifetime testing was performed. Although the lifetime tests results were overlayed by a larges scatter, finally two candidates have been identified for use in a subsequent qualification program. This activity forms part of element 5 of the ESA ARTES Programme.

  15. High voltage compliance constant current ballast

    NASA Technical Reports Server (NTRS)

    Rosenthal, L. A.

    1976-01-01

    A ballast circuit employing a constant current diode and a vacuum tube that can provide a constant current over a voltage range of 1000 volts. The simple circuit can prove useful in studying voltage breakdown characteristics.

  16. High voltage variable diameter insulator

    DOEpatents

    Vanacek, D.L.; Pike, C.D.

    1982-07-13

    A high voltage feedthrough assembly having a tubular insulator extending between the ground plane ring and the high voltage ring. The insulator is made of Pyrex and decreases in diameter from the ground plane ring to the high voltage ring, producing equipotential lines almost perpendicular to the wall of the insulator to optimize the voltage-holding capability of the feedthrough assembly.

  17. Partial discharge in a high voltage experimental test assembly

    SciTech Connect

    Koss, R.J.; Brainard, J.P.

    1998-07-01

    This study was initiated when a new type of breakdown occurred in a high voltage experimental test assembly. An anomalous current pulse was observed, which indicated partial discharges, some leading to total breakdowns. High voltage insulator defects are shown along with their effect on the electrostatic fields in the breakdown region. OPERA electromagnetic field modeling software is used to calculate the fields and present a cause for the discharge. Several design modifications are investigated and one of the simplest resulted in a 25% decrease in the field at the discharge surface.

  18. High Voltage Seismic Generator

    NASA Astrophysics Data System (ADS)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  19. High voltage pulse conditioning

    DOEpatents

    Springfield, Ray M.; Wheat, Jr., Robert M.

    1990-01-01

    Apparatus for conditioning high voltage pulses from particle accelerators in order to shorten the rise times of the pulses. Flashover switches in the cathode stalk of the transmission line hold off conduction for a determinable period of time, reflecting the early portion of the pulses. Diodes upstream of the switches divert energy into the magnetic and electrostatic storage of the capacitance and inductance inherent to the transmission line until the switches close.

  20. Insulators for high voltages

    SciTech Connect

    Looms, J.S.T.

    1987-01-01

    This book describes electrical insulators for high voltage applications. Topics considered include the insulating materials, the manufacture of wet process porcelain, the manufacture of tempered glass, the glass-fibre core, the polymeric housing, the common problem - terminating an insulator, mechanical constraints, the physics of pollution flashover, the physics of contamination, testing of insulators, conclusions from testing, remedies for flashover, insulators for special cases, interference and noise, and the insulator of the future.

  1. HIGH VOLTAGE GENERATOR

    DOEpatents

    Schwemin, A.J.

    1959-03-17

    A generator is presented for producing relatively large currents at high voltages. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  2. High voltage generator

    DOEpatents

    Schwemin, A. J.

    1959-03-17

    A generator for producing relatively large currents at high voltages is described. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The above-noted circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  3. HIGH VOLTAGE ION SOURCE

    DOEpatents

    Luce, J.S.

    1960-04-19

    A device is described for providing a source of molecular ions having a large output current and with an accelerated energy of the order of 600 kv. Ions are produced in an ion source which is provided with a water-cooled source grid of metal to effect maximum recombination of atomic ions to molecular ions. A very high accelerating voltage is applied to withdraw and accelerate the molecular ions from the source, and means are provided for dumping the excess electrons at the lowest possible potentials. An accelerating grid is placed adjacent to the source grid and a slotted, grounded accelerating electrode is placed adjacent to the accelerating grid. A potential of about 35 kv is maintained between the source grid and accelerating grid, and a potential of about 600 kv is maintained between the accelerating grid and accelerating electrode. In order to keep at a minimum the large number of oscillating electrons which are created when such high voltages are employed in the vicinity of a strong magnetic field, a plurality of high voltage cascaded shields are employed with a conventional electron dumping system being employed between each shield so as to dump the electrons at the lowest possible potential rather than at 600 kv.

  4. A doping concentration-dependent upper limit of the breakdown voltage cutoff frequency product in Si bipolar transistors

    NASA Astrophysics Data System (ADS)

    Rieh, Jae-Sung; Jagannathan, Basanth; Greenberg, David; Freeman, Greg; Subbanna, Seshadri

    2004-02-01

    Recent high-speed Si-based bipolar transistors apparently exceed the Johnson Limit in terms of breakdown voltage-cutoff frequency product, and this paper addresses the relevant issues. First, BV CES rather than BV CEO is shown to be the representative breakdown voltage in describing the breakdown-speed trade-off in collector design, since BV CEO is modulated by the current gain which is irrelevant of the collector design and also practical bipolar circuits are rarely operated with open-base condition for which BV CEO is defined. In the same context, it is suggested BV CES be employed in representing the upper limit of breakdown voltage-cutoff frequency product. Second, a collector doping concentration-dependent upper limit of BV CES· fT product is proposed incorporating the doping concentration-dependent critical electric field and accurate values for related device parameters. With this new approach, it is shown that the limit is far larger than the Johnson Limit and the limit is still yet to be reached.

  5. High voltage DC power supply

    DOEpatents

    Droege, T.F.

    1989-12-19

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

  6. High voltage DC power supply

    DOEpatents

    Droege, Thomas F.

    1989-01-01

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

  7. Breakdown voltage in vertical power FLIMOSFETs with one internal floating island

    NASA Astrophysics Data System (ADS)

    Galadi, A.; Morancho, F.; Hassani, M. M.

    2008-09-01

    Recently a new power FLIMOSFET ('floating islands MOSFET') structure was proposed to reduce conduction losses in power MOS devices. The vertical FLIMOSFET offers a better trade-off between breakdown voltage and specific on-resistance compared to the conventional VDMOSFET. The improvement of this trade-off was obtained by inserting one (or several) floating island(s) in the epitaxial layer of the VDMOS transistor. In this paper, theoretical analysis of breakdown voltage of the FLIMOSFET with a single floating island is proposed. This analytical method exhibits good agreement with 2D simulations and measurements.

  8. APPARATUS FOR REGULATING HIGH VOLTAGE

    DOEpatents

    Morrison, K.G.

    1951-03-20

    This patent describes a high-voltage regulator of the r-f type wherein the modulation of the r-f voltage is accomplished at a high level, resulting in good stabilization over a large range of load conditions.

  9. Improving breakdown voltage performance of SOI power device with folded drift region

    NASA Astrophysics Data System (ADS)

    Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

    2016-07-01

    A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

  10. High voltage variable diameter insulator

    DOEpatents

    Vanecek, David L.; Pike, Chester D.

    1984-01-01

    A high voltage feedthrough assembly (10) having a tubular insulator (15) extending between the ground plane ring (16) and the high voltage ring (30). The insulator (15) is made of Pyrex and decreases in diameter from the ground plane ring (16) to the high voltage ring (30), producing equipotential lines almost perpendicular to the wall (27) of the insulator (15) to optimize the voltage-holding capability of the feedthrough assembly (10).

  11. High voltage isolation transformer

    NASA Technical Reports Server (NTRS)

    Clatterbuck, C. H.; Ruitberg, A. P. (Inventor)

    1985-01-01

    A high voltage isolation transformer is provided with primary and secondary coils separated by discrete electrostatic shields from the surfaces of insulating spools on which the coils are wound. The electrostatic shields are formed by coatings of a compound with a low electrical conductivity which completely encase the coils and adhere to the surfaces of the insulating spools adjacent to the coils. Coatings of the compound also line axial bores of the spools, thereby forming electrostatic shields separating the spools from legs of a ferromagnetic core extending through the bores. The transformer is able to isolate a high constant potential applied to one of its coils, without the occurrence of sparking or corona, by coupling the coatings, lining the axial bores to the ferromagnetic core and by coupling one terminal of each coil to the respective coating encasing the coil.

  12. Cryogenic High Voltage Insulation Breaks for ITER

    NASA Astrophysics Data System (ADS)

    Kovalchuk, O. A.; Safonov, A. V.; Rodin, I. Yu.; Mednikov, A. A.; Lancetov, A. A.; Klimchenko, Yu. A.; Grinchenko, V. A.; Voronin, N. M.; Smorodina, N. V.; Bursikov, A. S.

    High voltage insulation breaks are used in cryogenic lines with gas or liquid (helium, hydrogen, nitrogen, etc.) at a temperature range of 4.2-300 K and pressure up to 30 MPa to insulate the parts of an electrophysical facility with different electrical potentials. In 2013 JSC "NIIEFA" delivered 95 high voltage insulation breaks to the IO ITER, i.e. 65 breaks with spiral channels and 30 breaks with uniflow channels. These high voltage insulation breaks were designed, manufactured and tested in accordance with the ITER Technical Specifications: «Axial Insulating Breaks for the Qualification Phase of ITER Coils and Feeders». The high voltage insulation breaks consist of the glass-reinforced plastic cylinder equipped with channels for cryoagent and stainless steel end fittings. The operating voltage is 30 kV for the breaks with spiral channels (30 kV HV IBs) and 4 kV for the breaks with uniflow channels (4 kV HV IBs). The main design feature of the 30 kV HV IBs is the spiral channels instead of a linear one. This approach has enabled us to increase the breakdown voltage and decrease the overall dimensions of the high voltage insulation breaks. In 2013 the manufacturing technique was developed to produce the high voltage insulation breaks with the spiral and uniflow channels that made it possible to proceed to serial production. To provide the acceptance tests of the breaks a special test facility was prepared. The helium tightness test at 10-11 m3Pa/s under the pressure up to 10 MPa, the high voltage test up to 135 kV and different types of mechanical tests were carried out at the room and liquid nitrogen temperatures.

  13. Effect of magnetic field on breakdown voltage characteristics of a multigap pseudospark

    SciTech Connect

    Sriram, D.; Jain, K.K.

    1997-06-01

    An experimental investigation of the effect of magnetic field on the breakdown voltage characteristics of a multigap pseudospark device, with hydrogen gas, in a hollow anode{endash}cathode, as well as a hollow cathode{endash}anode configuration, is presented. The breakdown pressure at a particular discharge voltage increases with the increase in the applied axial magnetic field, and the magnitude of the increase is more pronounced at lower discharge voltages causing a right shift to the characteristic discharge curve in both the configurations. Application of a transverse magnetic field also resulted in a shift of the characteristic discharge curve towards the right. The observed results are compared and discussed with that found for parallel electrode geometry. {copyright} {ital 1997 American Institute of Physics.}

  14. Breakdown Characteristics of SF6 Gas under Non-Standard Lightning Impulse Voltage

    NASA Astrophysics Data System (ADS)

    Yuasa, Sadayuki; Okabe, Shigemitsu

    Evaluation of lightning surge waveforms that actually enter into substations is important to investigating the test voltage of gas insulated switchgear (GIS). The actual lightning surge waveforms in substations are different from the standard lightning impulse voltage because they are complex and are usually superimposed with various oscillations. This paper describes insulation characteristics in SF6 gas gap under the waveforms including oscillation (called waveforms B, C and D). The minimum breakdown voltages (Vmin) under experimental waveforms are higher than Vmin under the standard lightning impulse voltage. The evaluation method, which deals duration applied over 80% of peak voltage and conversion factor for second waves of waveform B, can estimate the insulation characteristics under waveforms B, C and D.

  15. High Voltage TAL Performance

    NASA Technical Reports Server (NTRS)

    Jacobson, David T.; Jankovsky, Robert S.; Rawlin, Vincent K.; Manzella, David H.

    2001-01-01

    The performance of a two-stage, anode layer Hall thruster was evaluated. Experiments were conducted in single and two-stage configurations. In single-stage configuration, the thruster was operated with discharge voltages ranging from 300 to 1700 V. Discharge specific impulses ranged from 1630 to 4140 sec. Thruster investigations were conducted with input power ranging from 1 to 8.7 kW, corresponding to power throttling of nearly 9: 1. An extensive two-stage performance map was generated. Data taken with total voltage (sum of discharge and accelerating voltage) constant revealed a decrease in thruster efficiency as the discharge voltage was increased. Anode specific impulse values were comparable in the single and two-stage configurations showing no strong advantage for two-stage operation.

  16. High Breakdown Strength, Multilayer Ceramics for Compact Pulsed Power Applications

    SciTech Connect

    Gilmore, B.; Huebner, W.; Krogh, M.L.; Lundstrom, J.M.; Pate, R.C.; Rinehart, L.F.; Schultz, B.C.; Zhang, S.C.

    1999-07-20

    Advanced ceramics are being developed for use in large area, high voltage devices in order to achieve high specific energy densities (>10 6 J/m 3 ) and physical size reduction. Initial materials based on slip cast TiO2 exhibited a high bulk breakdown strength (BDS >300 kV/cm) and high permittivity with low dispersion (e�100). However, strong area and thickness dependencies were noted. To increase the BDS, multilayer dielectric compositions are being developed based on glass/TiO2 composites. The addition of glass increases the density (�99.8% theoretical), forms a continuous grain boundary phase, and also allows the use of high temperature processes to change the physical shape of the dielectric. The permittivity can also be manipulated since the volume fraction and connectivity of the glassy phase can be readily shifted. Results from this study on bulk breakdown of TiO2 multilayer structures with an area of 2cm 2 and 0.1cm thickness have measured 650 kV/cm. Furthermore, a strong dependence of breakdown strength and permittivity has been observed and correlated with microstructure and the glass composition. This paper presents the interactive effects of manipulation of these variables.

  17. Prediction of Treeing Breakdown from Pulse Height of Partial Discharge on Voltage-Phase Angle

    NASA Astrophysics Data System (ADS)

    Okamoto, Tatsuki; Tanaka, Toshikatsu

    1985-02-01

    This paper describes the change in the partial discharge (PD) characteristics due to the growth of electrical trees in insulating materials under the application of an AC voltage. An electrical tree consists of branch-like dielectric breakdown paths. Investigation of a number of characteristic PD parameters shows that the φ-q distribution profile has a good correlation with tree growth. The φ-q distribution expresses the average pulse height as a function of the AC voltage-phase angle. The distribution indicates a common profile for trees growing in both epoxy resin and polyethylene. Tree growth in these materials can thus be detected by monitoring the profile of the φ-q distribution, and the final breakdown can be predicted from the tree growth.

  18. Low voltage to high voltage level shifter and related methods

    NASA Technical Reports Server (NTRS)

    Mentze, Erik J. (Inventor); Hess, Herbert L. (Inventor); Buck, Kevin M. (Inventor); Cox, David F. (Inventor)

    2006-01-01

    A shifter circuit comprises a high and low voltage buffer stages and an output buffer stage. The high voltage buffer stage comprises multiple transistors arranged in a transistor stack having a plurality of intermediate nodes connecting individual transistors along the stack. The transistor stack is connected between a voltage level being shifted to and an input voltage. An inverter of this stage comprises multiple inputs and an output. Inverter inputs are connected to a respective intermediate node of the transistor stack. The low voltage buffer stage has an input connected to the input voltage and an output, and is operably connected to the high voltage buffer stage. The low voltage buffer stage is connected between a voltage level being shifted away from and a lower voltage. The output buffer stage is driven by the outputs of the high voltage buffer stage inverter and the low voltage buffer stage.

  19. Physical mechanisms for reduction of the breakdown voltage in the circuit of a rod lightning protector with an opening microswitch

    SciTech Connect

    Bobrov, Yu. K.; Zhuravkov, I. V.; Ostapenko, E. I.; Starikov, V. V.; Yurgelenas, Yu. V.

    2010-12-15

    The effect of air gap breakdown voltage reduction in the circuit with an opening microswitch is substantiated from the physical point of view. This effect can be used to increase the efficiency of lightning protection system with a rod lightning protector. The processes which take place in the electric circuit of a lightning protector with a microswitch during a voltage breakdown are investigated. Openings of the microswitch are shown to lead to resonance overvoltages in the dc circuit and, as a result, efficient reduction in the breakdown voltage in a lightning protector-thundercloud air gap.

  20. Experimental study and two-dimensional modeling of avalanche breakdown voltage in polycrystalline silicon p-n junctions

    NASA Astrophysics Data System (ADS)

    Amrani, Mohammed; Benamara, Zineb; Chellali, Mohammed; Tizi, Schahrazade; Mohammed-Brahim, Tayeb

    2007-05-01

    A two-dimensional (2D) model of the avalanche breakdown mechanism is examined to achieve a lateral polycrystalline silicon (polysilicon) p+-n diode with high forward current and high breakdown voltage (BV). Samples with different film thicknesses (tf) were deposited by low-pressure chemical vapor deposition process. The p+ zone and n zone are doped by ionic implantation with boron and phosphorus, respectively. The measured current-voltage (I-V) characteristics show that BV varies between 6.4, 7.5, and 8.25V when tf varies between 250, 350, and 450nm, respectively. These data also show that when tf decreases, the forward current is high, the leakage current becomes higher under reverse bias, and BV decreases. We reveal that the breakdown phenomenon of our samples is dominated by the impact ionization effect. A 2D simulation of avalanche breakdown voltage versus the critical parameters of polysilicon diodes is implemented. The algorithm is based on the solution of Poisson's equation and calculating the ionization integral along various electric field lines computed from the potential distribution. By taking into account the localization of trap states in the grain boundaries, the effects on the breakdown voltage of the doping concentration ND, the intergranular trap state density NT, the grain sizes Lg, the disposition of the grain boundaries, and the film thickness tf are investigated. The simulation results show that the impact ionization mechanism is more accelerated in polysilicon than in single-crystalline silicon, and the BV(Lg), BV(ND), BV(NT), and BV(tf) curves are characterized by a succession of descending stair shapes due to the trapping of free carries by trap states contained in grain boundaries that are parallel to the metallurgic junction. By comparing simulation results with experimental data, we select the electron-hole ionization coefficients characterizing our samples: αn∞=1.0×106cm-1, Encrit=5.87×106Vcm-1, αp∞=1.582×106cm-1, and EPcrit=2

  1. High Voltage Design Guidelines: A Timely Update

    NASA Technical Reports Server (NTRS)

    Hillard, G. Barry; Kirkici, H.; Ensworth, Clint (Technical Monitor)

    2001-01-01

    The evolving state of high voltage systems and their increasing use in the space program have called for a revision of the High Voltage Design Guidelines, Marshall Space Flight Center technical document MSFC-STD-531, originally issued September 1978 (previously 50 M05189b, October 1972). These guidelines deal in depth with issues relating to the specification of materials, particularly electrical insulation, as well as design practices and test methods. Emphasis is on corona and Paschen breakdown as well as plasma effects for Low Earth Orbiting systems. We will briefly review the history of these guidelines as well as their immediate predecessors and discuss their range of applicability. In addition, this document has served as the basis for several derived works that became focused, program-specific HV guidelines. We will briefly review two examples, guidelines prepared for the X-33 program and for the Space Shuttle Electric Auxiliary Power Unit (EAPU) upgrade.

  2. Temperature controlled high voltage regulator

    DOEpatents

    Chiaro, Jr., Peter J.; Schulze, Gerald K.

    2004-04-20

    A temperature controlled high voltage regulator for automatically adjusting the high voltage applied to a radiation detector is described. The regulator is a solid state device that is independent of the attached radiation detector, enabling the regulator to be used by various models of radiation detectors, such as gas flow proportional radiation detectors.

  3. Hole injection SiO2 breakdown model for very low voltage lifetime extrapolation

    NASA Astrophysics Data System (ADS)

    Schuegraf, Klaus F.; Hu, Chenming

    1994-05-01

    In this paper, we present a model for silicon dioxide breakdown characterization, valid for a thickness range between 25 angstrom and 130 angstrom, which provides a method for predicting dielectric lifetime for reduced power supply voltages and aggressively scaled oxide thicknesses. This model, based on hole injection from the anode, accurately predicts Q(sub BD) and t(sub BD) behavior including a fluence in excess of 10(exp 7) C/cm(exp 2) at an oxide voltage of 2.4 V for a 25 angstrom oxide. Moreover, this model is a refinement of and fully complementary with the well known 1/E model, while offering the ability to predict oxide reliability for low voltages.

  4. Breakdown of atmospheric pressure microgaps at high excitation frequencies

    SciTech Connect

    Levko, Dmitry; Raja, Laxminarayan L.

    2015-05-07

    Microwave (mw) breakdown of atmospheric pressure microgaps is studied by a one-dimensional Particle-in-Cell Monte Carlo Collisions numerical model. The effect of both field electron emission and secondary electron emission (due to electron impact, ion impact, and primary electron reflection) from surfaces on the breakdown process is considered. For conditions where field emission is the dominant electron emission mechanism from the electrode surfaces, it is found that the breakdown voltage of mw microdischarge coincides with the breakdown voltage of direct-current (dc) microdischarge. When microdischarge properties are controlled by both field and secondary electron emission, breakdown voltage of mw microdischarge exceeds that of dc microdischarge. When microdischarge is controlled only by secondary electron emission, breakdown voltage of mw microdischarge is smaller than that of dc microdischarge. It is shown that if the interelectrode gap exceeds some critical value, mw microdischarge can be ignited only by electrons initially seeded within the gap volume. In addition, the influence of electron reflection and secondary emission due to electron impact is studied.

  5. High voltage with Si series photovoltaics.

    SciTech Connect

    Hsia, Alex; Bennett, Reid Stuart; Patel, Rupal K.; Nasby, Robert D.; Stein, David J.

    2006-02-01

    A monolithic crystalline Si photovoltaic device, developing a potential of 2,120 Volts, has been demonstrated. The monolithic device consists of 3600 small photovoltaic cells connected in series and fabricated using standard CMOS processing on SOI wafers. The SOI wafers with trenches etched to the buried oxide (BOX) depth are used for cell isolation. The photovoltaic cell is a Si pn junction device with the n surface region forming the front surface diffused region upon which light impinges. Contact is formed to the deeper diffused region at the cell edge. The p+ deep-diffused region forms the contact to the p-type base region. Base regions were 5 or 10 {micro}m thick. Series connection of individual cells is accomplished using standard CMOS interconnects. This allows for the voltage to range from approximately 0.5 Volts for a single cell to above a thousand volts for strings of thousands of cells. The current is determined by cell area. The voltage is limited by dielectric breakdown. Each cell is isolated from the adjacent cells through dielectric-filled trench isolation, the substrate through the SOI buried oxide, and the metal wiring by the deposited pre-metal dielectric. If any of these dielectrics fail (whether due to high electric fields or inherent defects), the photovoltaic device will not produce the desired potential. We have used ultra-thick buried oxide SOI and several novel processes, including an oxynitride trench fill process, to avoid dielectric breakdown.

  6. Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

    NASA Technical Reports Server (NTRS)

    Teverovsky, Alexander A.

    2011-01-01

    the processes under reverse bias conditions. In practice, there were instances when, due to unforeseen events, the system operated at conditions when capacitors experience periodically a relatively small reverse bias for some time followed by normal, forward bias conditions. In such a case an assessment should be made on the degree to which these capacitors are degraded by application of low-voltage reverse bias, and whether this degradation can be reversed by normal operating conditions. In this study, reverse currents in different types of tantalum capacitors were monitored at different reverse voltages below 15%VR and temperatures in the range from room to 145 C for up to 150 hours to get better understanding of the degradation process and determine conditions favorable to the unstable mode of operation. The reversibility of RB degradation has been evaluated after operation of the capacitors at forward bias conditions. The effect of reverse bias stress (RBS) on reliability at normal operating conditions was evaluated using highly accelerated life testing at voltages of 1.5VR and 2 VR and by analysis of changes in distributions of breakdown voltages. Possible mechanisms of RB degradation are discussed.

  7. High voltage lightning grounding device

    NASA Technical Reports Server (NTRS)

    Hoffman, R. G.; Peterson, V. S.

    1971-01-01

    Grounding device insertion in wire termination cabinets and terminal block modification prevent lightning-induced high voltage transients from reaching inputs or outputs of solid state instruments and control systems. Installation minimizes wiring confusion and achieves 100 percent protection.

  8. High voltage solar array experiments

    NASA Technical Reports Server (NTRS)

    Kennerud, K. L.

    1974-01-01

    The interaction between the components of a high voltage solar array and a simulated space plasma is studied to obtain data for the design of a high voltage solar array capable of 15kW at 2 to 16kV. Testing was conducted in a vacuum chamber 1.5-m long by 1.5-m diameter having a plasma source which simulated the plasma conditions existing in earth orbit between 400 nautical miles and synchronous altitude. Test samples included solar array segments pinholes in insulation covering high voltage electrodes, and plain dielectric samples. Quantitative data are presented in the areas of plasma power losses, plasma and high voltage induced damage, and dielectric properties. Limitations of the investigation are described.

  9. High stored-energy breakdown tests on electrodes made of stainless steel, copper, titanium and molybdenum

    SciTech Connect

    Esch, H. P. L. de Simonin, A.; Grand, C.

    2015-04-08

    IRFM have conducted resilience tests on electrodes made of Cu, stainless steel 304L, Ti and Mo against breakdowns up to 170 kV and 300 J. The tests of the 10×10 cm{sup 2} electrodes have been performed at an electrode distance d=11 mm under vacuum (P∼5×10{sup −6} mbar). No great difference in voltage holding between the materials could be identified; all materials could reach a voltage holding between 140 and 170 kV over the 11 mm gap, i.e. results scatter within a ±10% band. After exposure to ∼10000 seconds of high-voltage (HV) on-time, having accumulated ∼1000 breakdowns, the electrodes were inspected. The anodes were covered with large and small craters. The rugosity of the anodes had increased substantially, that of the cathodes to a lesser extent. The molybdenum electrodes are least affected, but this does not show in their voltage holding capability. It is hypothesized that penetrating high-energy electrons from the breakdown project heat below the surface of the anode and cause a micro-explosion of material when melting point is exceeded. Polished electrodes have also been tested. The polishing results in a substantially reduced breakdown rate in the beginning, but after having suffered a relatively small number (∼100) of breakdowns, the polished electrodes behaved the same as the unpolished ones.

  10. High stored-energy breakdown tests on electrodes made of stainless steel, copper, titanium and molybdenum

    NASA Astrophysics Data System (ADS)

    de Esch, H. P. L.; Simonin, A.; Grand, C.

    2015-04-01

    IRFM have conducted resilience tests on electrodes made of Cu, stainless steel 304L, Ti and Mo against breakdowns up to 170 kV and 300 J. The tests of the 10×10 cm2 electrodes have been performed at an electrode distance d=11 mm under vacuum (P˜5×10-6 mbar). No great difference in voltage holding between the materials could be identified; all materials could reach a voltage holding between 140 and 170 kV over the 11 mm gap, i.e. results scatter within a ±10% band. After exposure to ˜10000 seconds of high-voltage (HV) on-time, having accumulated ˜1000 breakdowns, the electrodes were inspected. The anodes were covered with large and small craters. The rugosity of the anodes had increased substantially, that of the cathodes to a lesser extent. The molybdenum electrodes are least affected, but this does not show in their voltage holding capability. It is hypothesized that penetrating high-energy electrons from the breakdown project heat below the surface of the anode and cause a micro-explosion of material when melting point is exceeded. Polished electrodes have also been tested. The polishing results in a substantially reduced breakdown rate in the beginning, but after having suffered a relatively small number (˜100) of breakdowns, the polished electrodes behaved the same as the unpolished ones.

  11. High voltage, low inductance hydrogen thyratron study program, phase 5

    NASA Astrophysics Data System (ADS)

    Friedman, S.

    1983-08-01

    50 kv per stage dynamic breakdown voltage (DBV) was demonstrated in low inductance multistage hydrogen thyratrons for total voltages up to nearly 200 kv, at pressures consistent with a 10 ns current rise time. High peak current operation has been demonstrated up to 14 ka at 56 kv (the limits of our high current test kit). Bottom stage holdoff the per stage DBV are comparable to that of the best single stage thyratrons, bottom stage holdoff, stage voltage addition, and prefire problems are solved.

  12. Nanocomposite dielectrics in PbO-BaO-Na2O-Nb2O5-SiO2 system with high breakdown strength for high voltage capacitor applications.

    PubMed

    Zhang, Qingmeng; Luo, Jun; Tang, Qun; Han, Dongfang; Zhou, Yi; Du, Jun

    2012-11-01

    Nanocomposite dielectrics in 6PbO-4BaO-20Na2O-40Nb2O5-30SiO2 system were prepared via melt-quenching followed by controlled crystallization. X-ray diffraction studies reveal that Pb2Nb2O7, Ba,NaNb5O15, NaNbO3 and PbNb2O6 phases are formed from the as-quenched glass annealed in temperature range from 700 degrees C to 850 degrees C. Ba2NaNb5O15, Pb2Nb2O7 crystallizes at 700 degrees C and then Pb2Nb2O7 disappears at 850 degrees C, while PbNb2O6 and NaNbO3 are formed at 850 degrees C. Microstructural observation shows that the crystallized particles are nanometer-sized and randomly distributed with glass matrix being often found at grain boundaries. The dielectric constant of the nanocomposites formed at different crystallization temperatures shows good frequency and electric field stability. The breakdown strength is slightly decreased when the glass-ceramics thickness is varied from 1 mm to 4 mm. The corresponding energy density could reach 2.96 J/cm3 with a breakdown strength of 58 kV/mm for thickness of 1 mm. PMID:23421296

  13. A method for encapsulating high voltage power transformers

    NASA Astrophysics Data System (ADS)

    Sanchez, Robert O.

    Voltage breakdowns become a major concern in reducing the size of high-voltage power converter transformers. Even the smallest of voids can provide a path for corona discharge which can cause a dielectric breakdown leading to a transformer failure. A method of encapsulating small high voltage transformers has been developed. The method virtually eliminates voids in the impregnation material, provides an exceptional dielectric between windings and provides a mechanically rugged package. The encapsulation material is a carboxyl terminated butadiene nitril (CTBN) modified mica filled epoxy. The method requires heat/vacuum to impregnate the coil and heat/pressure to cure the encapsulant. The transformer package utilizes a diallyl phthalate (DAP) contact assembly in which a coated core/coil assembly is mounted and soldered. This assembly is then loaded into an RTV mold and the encapsulation process begins.

  14. A method for encapsulating high voltage power transformers

    SciTech Connect

    Sanchez, R.O.

    1990-01-01

    Voltage breakdowns become a major concern in reducing the size of high-voltage power converter transformers. Even the smallest of voids can provide a path for corona discharge which can cause a dielectric breakdown leading to a transformer failure. A method of encapsulating small high voltage transformers has been developed. The method virtually eliminates voids in the impregnation material, provides an exceptional dielectric between windings and provides a mechanically rugged package. The encapsulation material is a CTBN modified mica filled epoxy. The method requires heat/vacuum to impregnate the coil and heat/pressure to cure the encapsulant. The transformer package utilizes a Diallyl Phthalate (DAP) contact assembly in which a coated core/coil assembly is mounted and soldered. This assembly is then loaded into an RTV mold and the encapsulation process begins.

  15. Improved Programmable High-Voltage Power Supply

    NASA Technical Reports Server (NTRS)

    Castell, Karen; Rutberg, Arthur

    1994-01-01

    Improved dc-to-dc converter functions as programmable high-voltage power supply with low-power-dissipation voltage regulator on high-voltage side. Design of power supply overcomes deficiencies of older designs. Voltage regulation with low power dissipation provided on high-voltage side.

  16. Analysis Code for High Gradient Dielectric Insulator Surface Breakdown

    SciTech Connect

    Ives, Robert Lawrence; Verboncoeur, John; Aldan, Manuel

    2010-05-30

    High voltage (HV) insulators are critical components in high-energy, accelerator and pulsed power systems that drive diverse applications in the national security, nuclear weapons science, defense and industrial arenas. In these systems, the insulator may separate vacuum/non-vacuum regions or conductors with high electrical field gradients. These insulators will often fail at electric fields over an order of magnitude lower than their intrinsic dielectric strength due to flashover at the dielectric interface. Decades of studies have produced a wealth of information on fundamental processes and mechanisms important for flashover initiation, but only for relatively simple insulator configurations in controlled environments. Accelerator and pulsed power system designers are faced with applying the fundamental knowledge to complex, operational devices with escalating HV requirements. Designers are forced to rely on “best practices” and expensive prototype testing, providing boundaries for successful operation. However, the safety margin is difficult to estimate, and system design must be very conservative for situations where testing is not practicable, or replacement of failed parts is disruptive or expensive. The Phase I program demonstrated the feasibility of developing an advanced code for modeling insulator breakdown. Such a code would be of great interest for a number of applications, including high energy physics, microwave source development, fusion sciences, and other research and industrial applications using high voltage devices.

  17. High Temperature Characteristic in Electrical Breakdown and Electrical Conduction of Epoxy/Boron-nitride Composite

    NASA Astrophysics Data System (ADS)

    Takenaka, Yutaka; Kurimoto, Muneaki; Murakami, Yoshinobu; Nagao, Masayuki

    The power module for the electrical vehicle needs electrical insulation material with high thermal conductivity. Recently, the epoxy insulating material filled with boron-nitride particles (epoxy/boron-nitride composite) is focused as an effective solution. However, the insulation performance of epoxy/boron-nitride composite was not investigated enough especially at the high temperature in which the power module was used, i.e. more than 100°C. In this paper, we investigated high temperature characteristics in electrical breakdown and conduction current of epoxy/boron-nitride composite. Breakdown test under the application of DC lamp voltage and impulse voltage clarified that the epoxy/boron-nitride composite had the constant breakdown strength even in the high temperature. Comparison of the epoxy/boron-nitride composite with previous material, which was epoxy/alumina composite, indicated that the breakdown voltage of the epoxy/boron-nitride composite in the high temperature was found to be higher than that of epoxy/alumina composite under the same thermal-transfer quantity among them. Furthermore, conduction current measurement of epoxy/boron-nitride composite in the high temperature suggested the possibility of the ionic conduction mechanism.

  18. High Voltage Space Solar Arrays

    NASA Technical Reports Server (NTRS)

    Ferguson, D. C.; Hillard, G. B.; Vayner, B. V.; Galofaro, J. T.; Lyons, Valerie (Technical Monitor)

    2002-01-01

    Recent tests performed at the NASA Glenn Research Center and elsewhere have shown promise in the design and construction of high voltage (300-1000 V) solar arrays for space applications. Preliminary results and implications for solar array design will be discussed, with application to direct-drive electric propulsion and space solar power.

  19. LHCb calorimeters high voltage system

    NASA Astrophysics Data System (ADS)

    Gilitsky, Yu.; Golutvin, A.; Konoplyannikov, A.; Lefrancois, J.; Perret, P.; Schopper, A.; Soldatov, M.; Yakimchuk, V.

    2007-02-01

    The calorimeter system in LHCb aims to identify electrons, photons and hadrons. All calorimeters are equipped with Hamamatsu photo tubes as devices for light to signal conversion. Eight thousand R7899-20 tubes are used for electromagnetic and hadronic calorimeters and two hundred 64 channels multi-anode R7600-00-M64 for Scintillator-Pad/Preshower detectors. The calorimeter high voltage (HV) system is based on a Cockroft Walton (CW) voltage converter and a control board connected to the Experiment Control System (ECS) by serial bus. The base of each photomultiplier tube (PMT) is built with a high voltage converter and constructed on an individual printed circuit board, using compact surface mount components. The base is attached directly to the PMT. There are no HV cables in the system. A Field Programmable Gate Array (FPGA) is used on the control board as an interface between the ECS and the 200 control channels. The FPGA includes also additional functionalities allowing automated monitoring and ramp up of the high voltage values. This paper describes the HV system architecture, some technical details of the electronics implementation and summarizes the system performance. This safe and low power consumption HV electronic system for the photomultiplier tubes can be used for various biomedical apparatus too.

  20. High-Voltage Droplet Dispenser

    NASA Technical Reports Server (NTRS)

    Eichenberg, Dennis J.

    2003-01-01

    An apparatus that is extremely effective in dispensing a wide range of droplets has been developed. This droplet dispenser is unique in that it utilizes a droplet bias voltage, as well as an ionization pulse, to release a droplet. Apparatuses that deploy individual droplets have been used in many applications, including, notably, study of combustion of liquid fuels. Experiments on isolated droplets are useful in that they enable the study of droplet phenomena under well-controlled and simplified conditions. In this apparatus, a syringe dispenses a known value of liquid, which emerges from, and hangs onto, the outer end of a flat-tipped, stainless steel needle. Somewhat below the needle tip and droplet is a ring electrode. A bias high voltage, followed by a high-voltage pulse, is applied so as to attract the droplet sufficiently to pull it off the needle. The voltages are such that the droplet and needle are negatively charged and the ring electrode is positively charged.

  1. High-voltage CMOS detectors

    NASA Astrophysics Data System (ADS)

    Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

    2016-07-01

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented.

  2. High Voltage GaN Schottky Rectifiers

    SciTech Connect

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  3. An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage

    NASA Astrophysics Data System (ADS)

    Xie, Gang; Edward, Xu; Niloufar, Hashemi; Zhang, Bo; Fred, Y. Fu; Wai, Tung Ng

    2012-08-01

    A reduced surface electric field in an AlGaN/GaN high electron mobility transistor (HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas (2-DEG) channel as an electric field shaping layer. The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions. Compared with the HEMTs with conventional source-connected field plates and double field plates, the HEMT with a Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, Lm, and the doping concentration, a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure, respectively. In a device with VGS = -5 V, Lm = 1.5 μm, a peak Mg doping concentration of 8×1017 cm-3 and a drift region length of 10 μm, the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.

  4. High voltage photovoltaic power converter

    DOEpatents

    Haigh, Ronald E.; Wojtczuk, Steve; Jacobson, Gerard F.; Hagans, Karla G.

    2001-01-01

    An array of independently connected photovoltaic cells on a semi-insulating substrate contains reflective coatings between the cells to enhance efficiency. A uniform, flat top laser beam profile is illuminated upon the array to produce electrical current having high voltage. An essentially wireless system includes a laser energy source being fed through optic fiber and cast upon the photovoltaic cell array to prevent stray electrical signals prior to use of the current from the array. Direct bandgap, single crystal semiconductor materials, such as GaAs, are commonly used in the array. Useful applications of the system include locations where high voltages are provided to confined spaces such as in explosive detonation, accelerators, photo cathodes and medical appliances.

  5. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    DOEpatents

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  6. Breakdown in Atmospheric Pressure Plasma Jets: Nearby Grounds and Voltage Rise Time

    NASA Astrophysics Data System (ADS)

    Lietz, Amanda; Kushner, Mark J.

    2015-09-01

    Atmospheric pressure plasma jets (APPJs) are being investigated to stimulate therapeutic responses in biological systems. These responses are not always consistent. One source of variability may be the design of the APPJs - the number and placement of electrodes, pulse power format - which affects the production of reactive species. In this study, the consequences of design parameters of an APPJ were computationally investigated using nonPDPSIM, a 2 d model. The configuration is a cylindrical tube with one or two ring exterior electrodes, with or without a center pin electrode. The APPJ operates in He/O2 flowing into humid air. We found that the placement of the electrical ground on and around the system is important to the breakdown characteristics of the APPJ, and the electron density and temperature of the resulting plasma. With a single powered ring electrode, the placement of the nearest ground may vary depending on the setup, and this significantly affects the discharge. With two-ring electrodes, the nearest ground plane is well defined, however more distant ground planes can also influence the discharge. With an ionization wave (IW) that propagates out of the tube and into the plume in tens of ns, the rise time of the voltage waveform can be on the same timescale, and so variations in the voltage rise time could produce different IW properties. The effect of ground placement and voltage waveform on IW formation (ns timescales) and production of reactive neutrals (ms timescales) will be discussed. Work supported by DOE (DE-SC0001319) and NSF (CHE-1124724). Done...processed 598 records...15:12:56

  7. Vox/Eox-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress

    NASA Astrophysics Data System (ADS)

    Tsujikawa, Shimpei; Shiga, Katsuya; Umeda, Hiroshi; Yugami, Jiro

    2007-01-01

    The breakdown mechanism of ultrathin SiON gate dielectrics in p-type metal oxide semiconductor field effect transistors having p+gates (p+gate-pMOSFETs) has been studied. Systematic study with varying gate doping concentrations has revealed that, in the case of p+gate-pMOSFET in inversion mode, gate dielectric breakdown under stress voltage lower than -4 V is driven by oxide voltage (Vox) or oxide field (Eox), while the breakdown under stress voltage higher than -4 V is driven by gate voltage (Vg). The Vox/Eox-driven breakdown observed under low stress voltage is quite important to the reliability of low-voltage complementary metal oxide semiconductor (CMOS). By studying the mechanism of the breakdown, it has been clarified that the breakdown is not induced by electron current. The concept that the breakdown is due to same mechanism as the negative bias temperature instability (NBTI), namely the interfacial hydrogen release driven by Eox, has been shown to be possible. However, direct tunneling of holes driven by Vox has also been found to be a possible driving force of the breakdown. Although a decisive conclusion concerning the mechanism issue has not yet been obtained, the key factor that governs the breakdown has been shown to be Vox or Eox.

  8. High voltage RF feedthrough bushing

    DOEpatents

    Grotz, Glenn F.

    1984-01-01

    Described is a multi-element, high voltage radio frequency bushing for trmitting RF energy to an antenna located in a vacuum container. The bushing includes a center conductor of complex geometrical shape, an outer coaxial shield conductor, and a thin-walled hollow truncated cone insulator disposed between central and outer conductors. The shape of the center conductor, which includes a reverse curvature portion formed of a radially inwardly directed shoulder and a convex portion, controls the uniformity of the axial surface gradient on the insulator cone. The outer shield has a first substantially cylindrical portion and a second radially inwardly extending truncated cone portion.

  9. High Voltage TAL Erosion Characterization

    NASA Technical Reports Server (NTRS)

    Jacobson, David T.

    2003-01-01

    Extended operation of a D-80 anode layer thruster at high voltage was investigated. The thruster was operated for 1200 hours at 700 Volts and 4 Amperes. Laser profilometry was employed to quantify the erosion of the thruster's graphite guard rings and electrodes at 0, 300, 600, 900, and 1200 hours. Thruster performance and electrical characteristics were monitored over the duration of the investigation. The guard rings exhibited asymmetric erosion that was greatest in the region of the cathode. Erosion of the guard rings exposed the magnet poles between 600 to 900 hours of operation.

  10. Breakdown-induced thermochemical reactions in HfO2 high-κ/polycrystalline silicon gate stacks

    NASA Astrophysics Data System (ADS)

    Ranjan, R.; Pey, K. L.; Tung, C. H.; Tang, L. J.; Ang, D. S.; Groeseneken, G.; De Gendt, S.; Bera, L. K.

    2005-12-01

    The chemistry of dielectric-breakdown-induced microstructural changes in HfO2 high-κ/polycrystalline silicon gate nMOSFETs under constant voltage stress has been studied. Based on an electron energy loss spectrometry analysis, the hafnium and oxygen chemical bonding in the breakdown induced Hf-based compounds of a "ball-shaped" defect is found to be different compared to the stoichiometric HfO2 and SiO2. The formation of possibly HfSixOy and HfSix compounds in the "ball-shaped" defect is attributed to a thermochemical reaction triggered by the gate dielectric breakdown.

  11. Breakdown voltage improvement of LDMOSs by charge balancing: An inserted P-layer in trench oxide (IPT-LDMOS)

    NASA Astrophysics Data System (ADS)

    Orouji, Ali A.; Mehrad, Mahsa

    2012-03-01

    For the first time, the novel inserted P-layer in trench oxide of LDMOS structure (IPT-LDMOS) is proposed in which a trench oxide with inserted P-layer is considered in the drift region to improve the breakdown voltage. Our simulation with two dimensional ALTAS simulator shows that by determining the optimum doping concentration of the P-layer, the charges of the N-drift and P-layer regions would be balanced. Therefore, complete depletion at the breakdown voltage in the drift region happens. Also, electric field in the IPT-LDMOS is modified by producing additional peaks which decrease the common peaks near the drain and source junctions.

  12. Recent advances of high voltage AlGaN/GaN power HFETs

    NASA Astrophysics Data System (ADS)

    Uemoto, Yasuhiro; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke

    2009-02-01

    We review our recent advances of GaN-based high voltage power transistors. These are promising owing to low on-state resistance and high breakdown voltage taking advantages of superior material properties. However, there still remain a couple of technical issues to be solved for the GaN devices to replace the existing Si-based power devices. The most critical issue is to achieve normally-off operation which is strongly desired for the safety operation, however, it has been very difficult because of the built-in polarization electric field. Our new device called GIT (Gate Injection Transistor) utilizing conductivity modulation successfully achieves the normally-off operation keeping low on-state resistance. The fabricated GIT on a Si substrate exhibits threshold voltage of +1.0V. The obtained on-state resistance and off-state breakdown voltage were 2.6mΩ•cm2 and 800V, respectively. Remaining technical issue is to further increase the breakdown voltage. So far, the reported highest off-state breakdown voltage of AlGaN/GaN HFETs has been 1900V. Overcoming these issues by a novel device structure, we have demonstrated the world highest breakdown voltages of 10400V using thick poly-crystalline AlN as a passivation film and Via-holes through sapphire which enable very efficient layout of the lateral HFET array avoiding any undesired breakdown of passivation films. Since conventional wet or dry etching cannot be used for chemically stable sapphire, high power pulsed laser is used to form the via-holes. The presented GaN power devices demonstrate that GaN is advantageous for high voltage power switching applications replacing currently used Si-based power MOSFETs and IGBTs.

  13. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    SciTech Connect

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep; Bader, Samuel

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  14. High-Power Microwave Breakdown of Dielectric Interfaces.

    NASA Astrophysics Data System (ADS)

    Calico, Steve Eugene

    A project to study the electrical breakdown of microwave windows due to high-power pulsed microwave fields was undertaken at Texas Tech University. The pulsed power equipment was acquired from the Air Force Weapons Laboratory in Albuquerque, NM, refurbished and redesigned as necessary, and serves as the high-power microwave source. The microwaves are used to test various vacuum to atmosphere interfaces (windows) in an attempt to isolate the mechanisms governing the electrical breakdown at the window. Windows made of three different materials and of three basic geometrical designs were tested in this experiment. Additionally, the surfaces of two windows were sanded with different grit sandpapers to determine the effect the surface texture has on the breakdown. The windows were tested in atmospheric pressure air, argon, helium, and to a lesser extent sulfur-hexafluoride. Estimates of the breakdown threshold in air and argon on a Lexan window were obtained as a consequence of these tests and were found to be considerably lower than that reported for pulsed microwave breakdown in gases. A hypothesis is presented in an attempt to explain the lower breakdown phenomena. A discussion of the comparative performance of the windows and an explanation as to the enhanced performance of some windows is given.

  15. High voltage load resistor array

    DOEpatents

    Lehmann, Monty Ray

    2005-01-18

    A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

  16. High voltage feed through bushing

    DOEpatents

    Brucker, J.P.

    1993-04-06

    A feed through bushing for a high voltage diode provides for using compression sealing for all sealing surfaces. A diode assembly includes a central conductor extending through the bushing and a grading ring assembly circumferentially surrounding and coaxial with the central conductor. A flexible conductive plate extends between and compressively seals against the central conductor and the grading ring assembly, wherein the flexibility of the plate allows inner and outer portions of the plate to axially translate for compression sealing against the central conductor and the grading ring assembly, respectively. The inner portion of the plate is bolted to the central conductor for affecting sealing. A compression beam is also bolted to the central conductor and engages the outer portion of the plate to urge the outer portion toward the grading ring assembly to obtain compression sealing therebetween.

  17. Least Square Support Vector Machine Modelling of Breakdown Voltage of Solid Insulating Materials in the Presence of Voids

    NASA Astrophysics Data System (ADS)

    Behera, S.; Tripathy, R. K.; Mohanty, S.

    2013-03-01

    The least square formulation of support vector machine (SVM) was recently proposed and derived from the statistical learning theory. It is also marked as a new development by learning from examples based on neural networks, radial basis function and splines or other functions. Here least square support vector machine (LS-SVM) is used as a machine learning technique for the prediction of the breakdown voltage of solid insulator. The breakdown voltage is due to partial discharge of five solid insulating materials under ac condition. That has been predicted as a function of four input parameters such as thickness of insulating samples ` t', diameter of void ` d', the thickness of the void ` t 1' and relative permittivity of materials `ɛ r ' by using the LS-SVM model. From experimental studies performed on cylindrical-plane electrode system, the requisite training data is obtained. The voids with different dimension are artificially created. Detailed studies have been carried out to determine the LS-SVM parameters which give the best result. At the completion of training it is found that the LS-SVM model is capable of predicting the breakdown voltage V b = ( t, t 1, d, ɛ r ) very efficiently and with a small value of the mean absolute error.

  18. Back gate induced breakdown mechanisms for thin layer SOI field P-channel LDMOS

    NASA Astrophysics Data System (ADS)

    Zhou, Xin; Qiao, Ming; He, Yitao; Yang, Wen; Li, Zhaoji; Zhang, Bo

    2016-01-01

    The back gate (BG) induced breakdown mechanisms for thin layer SOI Field P-channel LDMOS (FPLDMOS) are investigated in this paper. Surface breakdown, bulk breakdown and punch-through breakdown are discussed, revealing that the block capability depends on not drain voltage (Vd), but also BG voltage (VBG). For surface breakdown, the breakdown voltage (BVs) increases linearly with VBG increasing. An expression of BVs on VBG is given, providing a good fitting to measured and simulated results. Bulk breakdown with a low breakdown voltage is attributed to high VBG. VBG induces depletion in n-well, giving rise to punch-through breakdown. A design requirement for the thin layer SOI FPLDMOS is proposed that breakdown voltages for the three breakdown mechanisms are compelled to be higher than the supply voltage of switching IC.

  19. Low power, scalable multichannel high voltage controller

    DOEpatents

    Stamps, James Frederick; Crocker, Robert Ward; Yee, Daniel Dadwa; Dils, David Wright

    2006-03-14

    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  20. Low power, scalable multichannel high voltage controller

    DOEpatents

    Stamps, James Frederick; Crocker, Robert Ward; Yee, Daniel Dadwa; Dils, David Wright

    2008-03-25

    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  1. Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode

    NASA Astrophysics Data System (ADS)

    Resfa, A.; Menezla, Brahimi. R.; Benchhima, M.

    2014-08-01

    This work aims to determine the characteristic I (breakdown voltage) of the inverse current in a GaAs PN junction diode, subject to a reverse polarization, while specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P+N structure using like material of basis the III-V compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region (SCR) and that is the trap density donor and acceptor states. The carrier crossing the space charge region (SCR) of W thickness creates N electron—hole pairs: for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region (SCR) by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I(V) current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in the surface, and the breakdown voltage.

  2. HIGH VOLTAGE, HIGH CURRENT SPARK GAP SWITCH

    DOEpatents

    Dike, R.S.; Lier, D.W.; Schofield, A.E.; Tuck, J.L.

    1962-04-17

    A high voltage and current spark gap switch comprising two main electrodes insulatingly supported in opposed spaced relationship and a middle electrode supported medially between the main electrodes and symmetrically about the median line of the main electrodes is described. The middle electrode has a perforation aligned with the median line and an irradiation electrode insulatingly supported in the body of the middle electrode normal to the median line and protruding into the perforation. (AEC)

  3. Experimental demonstration of an anode voltage sensor for high voltage IGBT over-voltage protection

    NASA Astrophysics Data System (ADS)

    Caramel, C.; Flores, D.; Hidalgo, S.; Legal, J.; Austin, P.; Imbernon, E.; Rebollo, J.; Sánchez, J. L.

    2010-11-01

    This paper deals with the design and fabrication of a monolithically integrated over-voltage sensor together with high voltage IGBTs. This solution will be of interest in harsh environment applications such as power modules for traction. First, the anode voltage sensor concept is introduced and an initial experimental validation on 600 V insulated gate bipolar transistor (IGBT) devices is provided. Then, guidelines for the design of a 3.3 kV IGBT including the proposed anode voltage sensor are pointed out together with its process fabrication. Finally, experimental results on fabricated 3.3 kV IGBTs are presented and compared with simulated expected behaviour.

  4. Electric breakdown effect in the current-voltage characteristics of amorphous indium oxide thin films near the superconductor-insulator transition

    NASA Astrophysics Data System (ADS)

    Cohen, O.; Ovadia, M.; Shahar, D.

    2011-09-01

    Current-voltage characteristics in the insulator bordering superconductivity in disordered thin films exhibit current jumps of several orders of magnitude due to the development of a thermally bistable electronic state at very low temperatures. In this high-resolution study we find that the jumps can be composed of many (up to 100) smaller jumps that appear to be random. This indicates that inhomogeneity develops near the transition to the insulator and that the current breakdown proceed via percolative paths spanning from one electrode to the other.

  5. Measurements of the volt-ampere characteristics and the breakdown voltages of direct-current helium and hydrogen discharges in microgaps

    SciTech Connect

    Klas, M.; Matejčik, Š.; Radjenović, B.; Radmilović-Radjenović, M.

    2014-10-15

    The discharge phenomena for micro meter gap sizes include many interesting problems from engineering and physical perspectives. In this paper, the authors deal with the experimental and theoretical results of the breakdown voltage and current-voltage characteristics of the direct-current helium and hydrogen discharges. The measurements were performed at a constant pressure of around one atmosphere, while varying the gap size between two parallel plane tungsten electrodes between 1 μm and 100 μm. From the measured breakdown voltage curves, the effective yields and the ionization coefficients were derived for both gases. Present data for the ionization coefficients correlate with the data obtained for the breakdown voltage curves measured for fixed 100 μm interelectrode separation. The current-voltage characteristics were plotted for the various gap sizes illustrating the role of the field emission effects in the microgaps. Based on the Fowler-Nordheim theory, the enhancement factors were determined. The gap spacing dependence of the field emission current can be explained by the introduction of two ideas, the first being a space charge effect by emitted electrons, and the second a change in the breakdown mechanism. Experimental results, presented here, demonstrate that Townsend phenomenology breaks down when field emission becomes the key mechanism affecting the breakdown and deforming the left hand side of the breakdown voltage curves.

  6. Measurements of the volt-ampere characteristics and the breakdown voltages of direct-current helium and hydrogen discharges in microgaps

    NASA Astrophysics Data System (ADS)

    Klas, M.; Matejčik, Š.; Radjenović, B.; Radmilović-Radjenović, M.

    2014-10-01

    The discharge phenomena for micro meter gap sizes include many interesting problems from engineering and physical perspectives. In this paper, the authors deal with the experimental and theoretical results of the breakdown voltage and current-voltage characteristics of the direct-current helium and hydrogen discharges. The measurements were performed at a constant pressure of around one atmosphere, while varying the gap size between two parallel plane tungsten electrodes between 1 μm and 100 μm. From the measured breakdown voltage curves, the effective yields and the ionization coefficients were derived for both gases. Present data for the ionization coefficients correlate with the data obtained for the breakdown voltage curves measured for fixed 100 μm interelectrode separation. The current-voltage characteristics were plotted for the various gap sizes illustrating the role of the field emission effects in the microgaps. Based on the Fowler-Nordheim theory, the enhancement factors were determined. The gap spacing dependence of the field emission current can be explained by the introduction of two ideas, the first being a space charge effect by emitted electrons, and the second a change in the breakdown mechanism. Experimental results, presented here, demonstrate that Townsend phenomenology breaks down when field emission becomes the key mechanism affecting the breakdown and deforming the left hand side of the breakdown voltage curves.

  7. Omega shape channel LDMOS: A novel structure for high voltage applications

    NASA Astrophysics Data System (ADS)

    Mehrad, Mahsa

    2016-01-01

    A new device structure for high breakdown voltage and low specific on resistance of the LDMOS device is proposed in this paper. The main idea in the proposed structure is using omega shape channel. The benefits of omega shape channel could be determined by extending depletion region in the drift region that causes low specific on resistance. Also, uniform horizontal electric field would be achieved that results in high breakdown voltage. The proposed structure is called Omega-shape Channel LDMOS (OCH-LDMOS). The simulation with two dimensional ATLAS simulator shows that the breakdown voltage increases to 712 V from 243 V of the conventional LDMOS at 12 μm drift length. Also, effective values of doping, length, and depth of Ω-shape channel are investigated.

  8. Design and experiment of 4H-SiC JBS diodes achieving a near-theoretical breakdown voltage with non-uniform floating limiting rings terminal

    NASA Astrophysics Data System (ADS)

    Yuan, Hao; Song, Qingwen; Tang, Xiaoyan; Zhang, Yimeng; Zhang, Yimen; Zhang, Yuming

    2016-09-01

    In this paper, a 4H-SiC Junction Barrier Schottky diode (JBS) with non-uniform floating limiting rings (FLRs) has been investigated and fabricated using n type 4H-SiC epitaxial layer with thickness of 31 μm and doping concentration of 3.3 × 1015 cm-3. According to the simulated results, the key parameters of a FLRs design to achieve a high voltage are the minimum space between two adjacent doped rings, spacing growth step and number of rings. The experimental results also show a great agreement with simulated results. Meanwhile, a near-ideal breakdown voltage of 3.7 kV was achieved, which yield around 95% of the parallel-plane breakdown voltage. The forward characteristics show that the fabricated JBS diodes have a forward current density of 210 A/cm2 at 3 V and a specific on-resistance (Rsp-on) of 7.58 mΩ cm2. Different FLRs parameters have no effect on the forward device performance.

  9. Understanding and Improving High Voltage Vacuum Insulators for Microsecond Pulses

    SciTech Connect

    Javedani, J B; Goerz, D A; Houck, T L; Lauer, E J; Speer, R D; Tully, L K; Vogtlin, G E; White, A D

    2007-03-05

    High voltage insulation is one of the main areas of pulsed power research and development, and dielectric breakdown is usually the limiting factor in attaining the highest possible performance in pulsed power devices. For many applications the delivery of pulsed power into a vacuum region is the most critical aspect of operation. The surface of an insulator exposed to vacuum can fail electrically at an applied field more than an order or magnitude below the bulk dielectric strength of the insulator. This mode of breakdown, called surface flashover, imposes serious limitations on the power flow into a vacuum region. This is especially troublesome for applications where high voltage conditioning of the insulator and electrodes is not practical and for applications where relatively long pulses, on the order of several microseconds, are required. The goal of this project is to establish a sound fundamental understanding of the mechanisms that lead to surface flashover, and then evaluate the most promising techniques to improve vacuum insulators and enable high voltage operation at stress levels near the intrinsic bulk breakdown limits of the material. The approach we proposed and followed was to develop this understanding through a combination of theoretical and computation methods coupled with experiments to validate and quantify expected behaviors. In this report we summarize our modeling and simulation efforts, theoretical studies, and experimental investigations. The computational work began by exploring the limits of commercially available codes and demonstrating methods to examine field enhancements and defect mechanisms at microscopic levels. Plasma simulations with particle codes used in conjunction with circuit models of the experimental apparatus enabled comparisons with experimental measurements. The large scale plasma (LSP) particle-in-cell (PIC) code was run on multiprocessor platforms and used to simulate expanding plasma conditions in vacuum gap regions

  10. Investigation of problems associated with solid encapsulation of high voltage electronic assemblies; also Reynolds connector study

    NASA Technical Reports Server (NTRS)

    Bever, R. S.

    1975-01-01

    Electric breakdown prevention in vacuum and encapsulation of high voltage electronic circuits was studied. The lap shear method was used to measure adhesive strengths. The permeation constants of air at ambient room temperature through four different space-grade encapsulants was measured. Order of magnitude was calculated for the time that air bubble pressures drop to the corona region. High voltage connectors with L-type cable attached were tested in a vacuum system at various pressures. The cable system was shown to suppress catastrophic breakdown when filled with and surrounded by gas in the corona region of pressures, but did not prove to be completely noise free.

  11. Electro-Optical High-Voltage Sensors

    NASA Technical Reports Server (NTRS)

    Gottsche, Allan; Johnston, Alan R.

    1992-01-01

    Electro-optical sensors for measuring high voltages developed for use in automatically controlled power-distribution systems. Sensors connected to optoelectronic interrogating equipment by optical fibers. Because sensitive material and optical fibers are all dielectric, no problem in electrically isolating interrogating circuitry from high voltage, and no need for voltage dividers. Sensor signals transmitted along fibers immune to electromagnetic noise at radio and lower frequencies.

  12. Disintegration of rocks based on magnetically isolated high voltage discharge

    NASA Astrophysics Data System (ADS)

    He, Mengbing; Jiang, Jinbo; Huang, Guoliang; Liu, Jun; Li, Chengzu

    2013-02-01

    Recently, a method utilizing pulsed power technology for disintegration of rocks arouses great interest of many researchers. In this paper, an improved method based on magnetic switch and the results shown that the uniform dielectrics like plastic can be broken down in water is presented, and the feasible mechanism explaining the breakdown of solid is proposed and proved experimentally. A high voltage pulse of 120 kV, rise time 0.2 μs was used to ignite the discharging channel in solids. When the plasma channel is formed in the solid, the resistance of the channel is quiet small; even if a relatively low voltage is applied on the channel on this occasion, it will produce high current to heat the plasma channel rapidly, and eventually disintegrate the solids. The feasibility of promising industrial application in the drilling and demolition of natural and artificial solid materials by the method we presented is verified by the experiment result in the paper.

  13. High voltage MOSFET switching circuit

    DOEpatents

    McEwan, T.E.

    1994-07-26

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

  14. High voltage MOSFET switching circuit

    DOEpatents

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  15. A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

    NASA Astrophysics Data System (ADS)

    Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

    2015-09-01

    In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

  16. Ultra-compact Marx-type high-voltage generator

    SciTech Connect

    Goerz, D.A.; Wilson, M.J.

    2000-05-09

    An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

  17. Ultra-compact Marx-type high-voltage generator

    DOEpatents

    Goerz, David A.; Wilson, Michael J.

    2000-01-01

    An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

  18. Note: Complementary metal-oxide-semiconductor high voltage pulse generation circuits

    NASA Astrophysics Data System (ADS)

    Sun, Jiwei; Wang, Pingshan

    2013-10-01

    We present two types of on-chip pulse generation circuits. The first is based on CMOS pulse-forming-lines (PFLs). It includes a four-stage charge pump, a four-stacked-MOSFET switch and a 5 mm long PFL. The circuit is implemented in a 0.13 μm CMOS process. Pulses of ˜1.8 V amplitude with ˜135 ps duration on a 50 Ω load are obtained. The obtained voltage is higher than 1.6 V, the rated operating voltage of the process. The second is a high-voltage Marx generator which also uses stacked MOSFETs as high voltage switches. The output voltage is 11.68 V, which is higher than the highest breakdown voltage (˜10 V) of the CMOS process. These results significantly extend high-voltage pulse generation capabilities of CMOS technologies.

  19. Note: Complementary metal-oxide-semiconductor high voltage pulse generation circuits.

    PubMed

    Sun, Jiwei; Wang, Pingshan

    2013-10-01

    We present two types of on-chip pulse generation circuits. The first is based on CMOS pulse-forming-lines (PFLs). It includes a four-stage charge pump, a four-stacked-MOSFET switch and a 5 mm long PFL. The circuit is implemented in a 0.13 μm CMOS process. Pulses of ~1.8 V amplitude with ~135 ps duration on a 50 Ω load are obtained. The obtained voltage is higher than 1.6 V, the rated operating voltage of the process. The second is a high-voltage Marx generator which also uses stacked MOSFETs as high voltage switches. The output voltage is 11.68 V, which is higher than the highest breakdown voltage (~10 V) of the CMOS process. These results significantly extend high-voltage pulse generation capabilities of CMOS technologies. PMID:24182184

  20. Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown

    SciTech Connect

    Kuzmik, J. Jurkovič, M.; Gregušová, D.; Ťapajna, M.; Brunner, F.; Cho, M.; Würfl, J.; Meneghesso, G.

    2014-04-28

    We investigate degradation mechanisms in AlGaN/GaN HEMTs which were repeatedly driven into the current-controlled off-state breakdown or subject to 60 s voltage- or current-controlled off state stresses. The current-controlled sweep in to the breakdown allows the sustainability of breakdown that can not be observed in the voltage controlled sweep. Only temporal changes were observed in the HEMT dc performance after repetitive sweeps, which were explained by charging/discharging of the HEMT surface at the gate-to-drain access region and in the GaN buffer below the gate. Similar changes were observed also if high-voltage stress has been applied on the drain; however, permanent degradation appears after 60 s current-controlled breakdown stress. In this case, the drain leakage current, as well as the breakdown current, increases significantly. On the other hand, the breakdown voltage, as well as the gate characteristics, remains unaltered. We suggest that the avalanche-injection process is governing the off-state breakdown event with a dominant role of the potential barrier at the channel-buffer interface.

  1. Dual Ground Plane for high-voltage MOSFET in UTBB FDSOI technology

    NASA Astrophysics Data System (ADS)

    Litty, Antoine; Ortolland, Sylvie; Golanski, Dominique; Cristoloveanu, Sorin

    2015-10-01

    For the first time, the investigation and fabrication of a high-voltage MOSFET (HVMOS) in Ultra-Thin Body and Buried oxide Fully Depleted technology (UTBB-FDSOI) is reported. Through TCAD simulations, the lateral electric field profile and related breakdown voltage behaviour are studied. Taking benefit of the FDSOI assets, an original HVMOS architecture, featuring a Dual Ground Plane, is proposed to optimize the electric field profile distribution. As a new lever for high voltage, the Dual Ground Plane enables a "RESURF-like" effect, electrostatically improving classical HVMOS figures of merit: the breakdown voltage (BV) and the specific-on resistance (RON.S). Experimental results confirm the potential of the Dual Ground Plane solution for HVMOS device in 28 nm UTBB-FDSOI technology and beyond.

  2. Pickup impact on high-voltage multifinger LDMOS-SCR with low trigger voltage and high failure current

    NASA Astrophysics Data System (ADS)

    Yang, Liu; Jin, Xiangliang; Wang, Yang; Zhou, Acheng

    2015-12-01

    The impact of inserting P+ pickup on high-voltage multi-finger laterally diffused metal-oxide-semiconductor-silicon-controlled rectifier (LDMOS-SCR) has been studied in this article. Four-finger LDMOS-SCR structures with finger length of 50 μm using 0.5 μm 18 V complementarily diffused metal oxide semiconductor (CDMOS) process were fabricated and tested. Theoretical analysis is carried out to make detailed comparisons between LDMOS-SCR with and without P+ pickup. It verifies that the multi-finger LDMOS-SCR with P+ pickup has greater electrostatic discharge (ESD) robustness and effectiveness. Furthermore, transmission line pulse (TLP) test has been done and the results show that the trigger voltage (Vt1) of the LDMOS-SCR with P+ pickup remarkably decreases from 46.19 to 35.39 V and the second breakdown current (It2) effectively increases from 8.13 to 10.08 A.

  3. Collector optimization for improving the product of the breakdown voltage-cutoff frequency in SiGe HBT

    NASA Astrophysics Data System (ADS)

    Qiang, Fu; Wanrong, Zhang; Dongyue, Jin; Yanxiao, Zhao; Lianghao, Zhang

    2015-04-01

    Compared with BVCEO, BVCES is more related to collector optimization and more practical significance, so that BVCES × fT rather than BVCEO × fT is employed in representing the limit of the product of the breakdown voltage-cutoff frequency in SiGe HBT for collector engineering design. Instead of a single decrease in collector doping to improve BVCES × fT and BVCEO × fT, a novel thin composite of N- and P+ doping layers inside the CB SCR is presented to improve the well-known tradeoff between the breakdown voltage and cut-off frequency in SiGe HBT, and BVCES and BVCEO are improved respectively with slight degradation in fT. As a result, the BVCES × fT product is improved from 537.57 to 556.4 GHz·V, and the BVCEO × fT product is improved from 309.51 to 326.35 GHz·V. Project supported by the National Natural Science Foundation of China (Nos. 60776051, 61006059, 61006044), the Beijing Natural Science Foundation (Nos. 4082007, 4143059, 4142007, 4122014), and the Beijing Municipal Education Committee (Nos. KM200710005015, KM200910005001).

  4. GaN-based multi-two-dimensional-electron-gas-channel diodes on sapphire substrates with breakdown voltage of over 3 kV

    NASA Astrophysics Data System (ADS)

    Terano, Akihisa; Tsuchiya, Tomonobu; Mochizuki, Kazuhiro; Tanaka, Shigehisa; Nakamura, Tohru

    2015-06-01

    We investigated the achievability of low specific on-resistance and high breakdown voltage by GaN diodes consisting of three, five, and eight two-dimensional-electron-gas (2DEG) channels. The anode Schottky electrode and cathode Ohmic electrode were formed on each side wall of the multi-2DEG-channel and the n-type region was formed by Si-ion implantation in the cathode electrode-formation area of each multi-2DEG-channel. With increasing number of 2DEG channels of the diodes, specific on-resistance (RonA) showed a tendency to decrease; RonA of eight-2DEG-channel diodes was as low as 12.1 mΩ cm2. The breakdown voltage of all the fabricated diodes exceeded 3 kV. Although the electrical characteristics of the multi-2DEG-channel diodes fabricated on sapphire substrates were demonstrated, the number of cracks appearing on the epitaxial layer surface was found to increase with increasing number of 2DEG channels. Such crack formation was concluded to govern the practical limit for the number of 2DEG channels.

  5. Current collection by high voltage anodes in near ionospheric conditions

    NASA Technical Reports Server (NTRS)

    Antoniades, John A.; Greaves, Rod G.; Boyd, D. A.; Ellis, R.

    1990-01-01

    The authors experimentally identified three distinct regimes with large differences in current collection in the presence of neutrals and weak magnetic fields. In magnetic field/anode voltage space the three regions are separated by very sharp transition boundaries. The authors performed a series of laboratory experiments to study the dependence of the region boundaries on several parameters, such as the ambient neutral density, plasma density, magnetic field strength, applied anode voltage, voltage pulsewidth, chamber material, chamber size and anode radius. The three observed regimes are: classical magnetic field limited collection; stable medium current toroidal discharge; and large scale, high current space glow discharge. There is as much as several orders of magnitude of difference in the amount of collected current upon any boundary crossing, particularly if one enters the space glow regime. They measured some of the properties of the plasma generated by the breakdown that is present in regimes II and III in the vicinity of the anode including the sheath modified electrostatic potential, I-V characteristics at high voltage as well as the local plasma density.

  6. Ultrasonic evaluation of high voltage circuit boards

    NASA Technical Reports Server (NTRS)

    Klima, S. J.; Riley, T. J.

    1976-01-01

    Preliminary observations indicate that an ultrasonic scanning technique may be useful as a quick, low cost, nondestructive method for judging the quality of circuit board materials for high voltage applications. Corona inception voltage tests were conducted on fiberglass-epoxy and fiberglass-polyimide high pressure laminates from 20 to 140 C. The same materials were scanned ultrasonically by utilizing the single transducer, through-transmission technique with reflector plate, and recording variations in ultrasonic energy transmitted through the board thickness. A direct relationship was observed between ultrasonic transmission level and corona inception voltage. The ultrasonic technique was subsequently used to aid selection of high quality circuit boards for the Communications Technology Satellite.

  7. Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Huang, Wei; Dudley, Michael

    1999-01-01

    Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

  8. Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes. Part 1; DC Properties

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Huang, Wei; Dudley, Michael

    1998-01-01

    Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

  9. High voltage space plasma interactions

    NASA Astrophysics Data System (ADS)

    McCoy, J. E.

    1980-07-01

    Two primary problems resulted from plasma interactions; one of concern to operations in geosynchronous orbit (GEO), the other in low orbits (LEO). The two problems are not the same. Spacecraft charging has become widely recognized as a problem, particularly for communications satellites operating in GEO. The very thin thermal plasmas at GEO are insufficient to bleed off voltage buildups due to higher energy charged particle radiation collected on outer surfaces. Resulting differential charging/discharging causes electrical transients, spurious command signals and possible direct overload damage. An extensive NASA/Air Force program has been underway for several years to address this problem. At lower altitudes, the denser plasmas of the plasmasphere/ionosphere provide sufficient thermal current to limit such charging to a few volts or less. Unfortunately, these thermal plasma currents which solve the GEO spacecraft charging problem can become large enough to cause just the opposite problem in LEO.

  10. High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

    NASA Astrophysics Data System (ADS)

    Cho, Doohyung; Sim, Seulgi; Park, Kunsik; Won, Jongil; Kim, Sanggi; Kim, Kwangsoo

    2015-12-01

    In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure. The ESL-TMBS rectifier has a 7.4% lower forward voltage drop and a 24% higher breakdown voltage. However, this structure has a reverse leakage current that is approximately three times higher than that of a conventional TMBS rectifier owing to the reduction in energy barrier height. This problem is solved when ESL is used partially, since its use provides a reverse leakage current that is comparable to that of a conventional TMBS rectifier. Thus, the forward voltage drop and breakdown voltage improve without any loss in static and dynamic characteristics in the ESL-TMBS rectifier compared with the performance of a conventional TMBS rectifier.

  11. Electrical safety for high voltage arrays

    NASA Technical Reports Server (NTRS)

    Marshall, N. A.

    1983-01-01

    A number of key electrical safety requirements for the high voltage arrays of central station photovoltaic power systems are explored. The suitability of representative industrial DC power switchgear for control and fault protection was evaluated. Included were AC/DC circuit breakers, electromechanical contactors and relays, load interruptors, cold disconnect devices, sectionalizing switches, and high voltage DC fuses. As appropriate, steady state and transient characteristics were analyzed. Failure modes impacting upon operation and maintenance safety were also identified, as were the voltage withstand and current interruption levels.

  12. Pulsed high-voltage dc RF sputtering

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J. S., Jr.; Shaltens, R. K.

    1969-01-01

    Sputtering technique uses pulsed high voltage direct current to the object to be plated and a radio frequency sputtered film source. Resultant film has excellent adhesion, and objects can be plated uniformly on all sides.

  13. High Voltage Lines: Hazard at a Distance.

    ERIC Educational Resources Information Center

    Marino, Andrew A.; Becker, Robert O.

    1978-01-01

    It appears that a variety of biological organisms, including man, are sensitive to both long and short-term exposure to the extra low frequency electric and magnetic fields produced by high voltage lines. (BB)

  14. Detecting Faults In High-Voltage Transformers

    NASA Technical Reports Server (NTRS)

    Blow, Raymond K.

    1988-01-01

    Simple fixture quickly shows whether high-voltage transformer has excessive voids in dielectric materials and whether high-voltage lead wires too close to transformer case. Fixture is "go/no-go" indicator; corona appears if transformer contains such faults. Nests in wire mesh supported by cap of clear epoxy. If transformer has defects, blue glow of corona appears in mesh and is seen through cap.

  15. Spacecraft high-voltage power supply construction

    NASA Technical Reports Server (NTRS)

    Sutton, J. F.; Stern, J. E.

    1975-01-01

    The design techniques, circuit components, fabrication techniques, and past experience used in successful high-voltage power supplies for spacecraft flight systems are described. A discussion of the basic physics of electrical discharges in gases is included and a design rationale for the prevention of electrical discharges is provided. Also included are typical examples of proven spacecraft high-voltage power supplies with typical specifications for design, fabrication, and testing.

  16. Boeing's High Voltage Solar Tile Test Results

    NASA Technical Reports Server (NTRS)

    Reed, Brian J.; Harden, David E.; Ferguson, Dale C.; Snyder, David B.

    2002-01-01

    Real concerns of spacecraft charging and experience with solar array augmented electrostatic discharge arcs on spacecraft have minimized the use of high voltages on large solar arrays despite numerous vehicle system mass and efficiency advantages. Boeing's solar tile (patent pending) allows high voltage to be generated at the array without the mass and efficiency losses of electronic conversion. Direct drive electric propulsion and higher power payloads (lower spacecraft weight) will benefit from this design. As future power demand grows, spacecraft designers must use higher voltage to minimize transmission loss and power cable mass for very large area arrays. This paper will describe the design and discuss the successful test of Boeing's 500-Volt Solar Tile in NASA Glenn's Tenney chamber in the Space Plasma Interaction Facility. The work was sponsored by NASA's Space Solar Power Exploratory Research and Technology (SERT) Program and will result in updated high voltage solar array design guidelines being published.

  17. Subnanosecond processes in the stage of breakdown formation in gas at a high pressure

    NASA Astrophysics Data System (ADS)

    Korolev, Yu. D.; Bykov, N. M.; Ivanov, S. N.

    2008-12-01

    Results are presented from experimental studies of the prebreakdown stage of a discharge in nitrogen at pressures of a few tens of atmospheres, gap voltages higher than 140 kV, and a voltage rise time of about 1 ns. Breakdown occurs at the front of the voltage pulse; i.e., the time of breakdown formation is shorter than the front duration. It is shown that, in gaps with a nonuniform electric field, the breakdown formation time is mainly determined by the time of avalanche development to the critical number of charge carriers. The subsequent stages of breakdown (the development of the ionization wave and the buildup of the conductivity in the weakly conducting channel bridging the gap) turn out to be shorter than this time or comparable to it.

  18. Efficient circuit triggers high-current, high-voltage pulses

    NASA Technical Reports Server (NTRS)

    Green, E. D.

    1964-01-01

    Modified circuit uses diodes to effectively disconnect the charging resistors from the circuit during the discharge cycle. Result is an efficient parallel charging, high voltage pulse modulator with low voltage rating of components.

  19. Bus-controlled power driver circuits for high voltages, using linear compatible I2L logic

    NASA Astrophysics Data System (ADS)

    Clauss, H.; Kuebler, M.

    1986-04-01

    A technology for monolithic integration of bipolar transistors, having breakdown voltages greater than or = to 60 V, and I2L-logic was developed. Bipolar transistors with high breakdown voltages must have thick, low doped epitaxial layers and low dc current gain, but I2L-logic with high packing density and short gate delay demands thin epitaxial layers and high dc current gain. A process with two epitaxial layers with buried layer and different intrinsic base doping for the two types of npn-transistor was developed. Bus-controlled power driver circuits for inductive loads in industrial systems were realized. Devices have 60 V maximum supply voltage and, electronically limited, 260 mA max output current.

  20. High-voltage 6H-SiC p-n junction diodes

    NASA Technical Reports Server (NTRS)

    Matus, L. G.; Powell, J. A.; Salupo, C. S.

    1991-01-01

    A chemical vapor deposition (CVD) process has been used to produce device structures of n- and p-type 6H-SiC epitaxial layers on commercially produced single-crystal 6H-SiC wafers. Mesa-style p-n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H-SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 C. To observe avalanche breakdown of the p-n junction diodes, testing under a high-electrical-strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD-grown SiC diode.

  1. High voltage planar multijunction solar cell

    NASA Technical Reports Server (NTRS)

    Evans, J. C., Jr.; Chai, A. T.; Goradia, C. P. (Inventor)

    1982-01-01

    A high voltage multijunction solar cell is provided wherein a plurality of discrete voltage generating regions or unit cells are formed in a single generally planar semiconductor body. The unit cells are comprised of doped regions of opposite conductivity type separated by a gap or undiffused region. Metal contacts connect adjacent cells together in series so that the output voltages of the individual cells are additive. In some embodiments, doped field regions separated by a overlie the unit cells but the cells may be formed in both faces of the wafer.

  2. The influence of water in XLPE cable conductor on XLPE insulation breakdown voltage and partial discharge

    SciTech Connect

    Nikolajevic, S.V.; Stojanovic, B.B.

    1996-12-31

    This paper presents the results of a continuing investigation into degradation of the crosslinked polyethylene (XLPE) cable insulation. The paper deals with the changing of water absorption of various types of XLPE cable insulations: steam and nitrogen-dry cured crosslinked polyethylene (XL) and steam and nitrogen-dry cured water tree retardant crosslinked polyethylene (WTR-XL). The results of the study into effect of water absorption on breakdown stress (AC BDS) and partial discharge for different XLPE cable insulations are also given. During the aging tests, the cable conductor was poured with the tap water and the cable ends were properly closed.

  3. Study of a High Voltage Ion Engine Power Supply

    NASA Technical Reports Server (NTRS)

    Stuart, Thomas A.; King, Roger J.; Mayer, Eric

    1996-01-01

    A complete laboratory breadboard version of a ion engine power converter was built and tested. This prototype operated on a line voltage of 80-120 Vdc, and provided output ratings of 1100 V at 1.8 kW, and 250 V at 20 mA. The high-voltage (HV) output voltage rating was revised from the original value of 1350 V at the beginning of the project. The LV output was designed to hold up during a 1-A surge current lasting up to 1 second. The prototype power converter included a internal housekeeping power supply which also operated from the line input. The power consumed in housekeeping was included in the overall energy budget presented for the ion engine converter. HV and LV output voltage setpoints were commanded through potentiometers. The HV converter itself reached its highest power efficiency of slightly over 93% at low line and maximum output. This would dip below 90% at high line. The no-load (rated output voltages, zero load current) power consumption of the entire system was less than 13 W. A careful loss breakdown shows that converter losses are predominately Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) conduction losses and HV rectifier snubbing losses, with the rectifier snubbing losses becoming predominant at high line. This suggests that further improvements in power efficiency could best be obtained by either developing a rectifier that was adequately protected against voltage overshoot with less snubbing, or by developing a pre-regulator to reduced the range of line voltage on the converter. The transient testing showed the converter to be fully protected against load faults, including a direct short-circuit from the HV output to the LV output terminals. Two currents sensors were used: one to directly detect any core ratcheting on the output transformer and re-initiate a soft start, and the other to directly detect a load fault and quickly shut down the converter for load protection. The finished converter has been extensively fault tested

  4. Programmable high voltage power supply with regulation confined to the high voltage section

    NASA Technical Reports Server (NTRS)

    Castell, Karen D. (Inventor); Ruitberg, Arthur P. (Inventor)

    1994-01-01

    A high voltage power supply in a dc-dc converter configuration includes a pre-regulator which filters and regulates the dc input and drives an oscillator which applies, in turn, a low voltage ac signal to the low side of a step-up high voltage transformer. The high voltage side of the transformer drives a voltage multiplier which provides a stepped up dc voltage to an output filter. The output voltage is sensed by a feedback network which then controls a regulator. Both the input and output of the regulator are on the high voltage side, avoiding isolation problems. The regulator furnishes a portion of the drive to the voltage multiplier, avoiding having a regulator in series with the load with its attendant, relatively high power losses. This power supply is highly regulated, has low power consumption, a low parts count and may be manufactured at low cost. The power supply has a programmability feature that allows for the selection of a large range of output voltages.

  5. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous...

  6. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous...

  7. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous...

  8. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous...

  9. Advanced Gate Drive for the SNS High Voltage Converter Modulator

    SciTech Connect

    Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; Anderson, D.E.; /Oak Ridge

    2009-05-07

    SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

  10. Electro-optic high voltage sensor

    DOEpatents

    Davidson, James R.; Seifert, Gary D.

    2003-09-16

    A small sized electro-optic voltage sensor capable of accurate measurement of high voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation. A polarization beam displacer separates the input beam into two beams with orthogonal linear polarizations and causes one linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels effect elliptically polarizes the beam as it travels through the crystal. A reflector redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization. The system may include a detector for converting the output beams into electrical signals and a signal processor for determining the voltage based on an analysis of the output beams.

  11. On the difference between breakdown and quench voltages of argon plasma and its relation to 4p–4s atomic state transitions

    SciTech Connect

    Forati, Ebrahim Piltan, Shiva; Sievenpiper, Dan

    2015-02-02

    Using a relaxation oscillator circuit, breakdown (V{sub BD}) and quench (V{sub Q}) voltages of a DC discharge microplasma between two needle probes are measured. High resolution modified Paschen curves are obtained for argon microplasmas including a quench voltage curve representing the voltage at which the plasma turns off. It is shown that for a point to point microgap (e.g., the microgap between two needle probes) which describes many realistic microdevices, neither Paschen's law applies nor field emission is noticeable. Although normally V{sub BD} > V{sub Q,} it is observed that depending on environmental parameters of argon, such as pressure and the driving circuitry, plasma can exist in a different state with equal V{sub BD} and V{sub Q.} Using emission line spectroscopy, it is shown that V{sub BD} and V{sub Q} are equal if the atomic excitation by the electric field dipole moment dominantly leads to one of the argon's metastable states (4P{sub 5} in our study)

  12. High-Voltage Isolation Transformer

    NASA Technical Reports Server (NTRS)

    Clatterbuck, C. H.; Ruitberg, A. P.

    1985-01-01

    Arcing and field-included surface erosion reduced by electrostatic shields around windings and ferromagnetic core of 80-kilovolt isolation transformer. Fabricated from high-resistivity polyurethane-based material brushed on critical surfaces, shields maintained at approximately half potential difference of windings.

  13. Statistics of electron avalanches and bursts in low pressure gases below the breakdown voltage

    SciTech Connect

    Donko, Z.

    1995-12-31

    Avalanches in different types of dynamical systems have been subject of recent interest. Avalanches building up in gases play an important role in radiation detectors and in the breakdown process of gas discharges. We have used computer simulation to study statistical properties of electron avalanches and bursts (sequences of avalanches) in a gas subjected to a homogeneous electric field. Helium was used as buffer gas, but we believe that our results are more general. The bursts were initiated by injecting low energy electrons into the gas. We applied Monte Carlo procedure to trace the trajectories of electrons. The elementary processes considered in the model were anisotropic elastic scattering of electrons from He atoms, electron impact excitation and ionization of He atoms. The electrons were traced until the are reached the perfectly absorbing anode.

  14. High voltage testing for the MAJORANA DEMONSTRATOR

    NASA Astrophysics Data System (ADS)

    Abgrall, N.; Arnquist, I. J.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Byram, D.; Caldwell, A. S.; Chan, Y.-D.; Christofferson, C. D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Dunagan, C.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Fu, Z.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Li, A.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Orrell, J. L.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Shanks, B.; Shirchenko, M.; Snyder, N.; Suriano, A. M.; Tedeschi, D.; Thompson, A.; Ton, K. T.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.

    2016-07-01

    The MAJORANA Collaboration is constructing the MAJORANA DEMONSTRATOR, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the MAJORANA DEMONSTRATOR. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the MAJORANA DEMONSTRATOR was characterized and the micro-discharge effects during the MAJORANA DEMONSTRATOR commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.

  15. High voltage testing for the Majorana Demonstrator

    DOE PAGESBeta

    Abgrall, N.; Arnquist, I. J.; Avignone, III, F. T.; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Byram, D.; et al

    2016-04-04

    The Majorana Collaboration is constructing the Majorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the Majorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of themore » high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during the Majorana Demonstrator commissioning phase were studied. Furthermore, a stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.« less

  16. Compact high voltage solid state switch

    DOEpatents

    Glidden, Steven C.

    2003-09-23

    A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

  17. Development of large high-voltage pressure insulators for the princeton TFTR flexible transmission lines

    NASA Astrophysics Data System (ADS)

    Scalise, D. T.; Fong, E.; Haughian, J.; Prechter, R.

    1987-04-01

    Specially formulated insulator materials with improved strength and high-voltage properties were developed and used for critical components of the flexible transmission lines to the TFTR neutral beam ion sources. These critical components are plates which support central conductors as they exit the high-voltage power supply and enter the ion source enclosure. Each plate acts both as a high-voltage insulator and as a pressure barrier to the SF 6 insulating gas. The original plate was made of commercial glass-epoxy laminate which limited the plate voltage capacity. The newly developed insulator is made of specially-formulated cycloalphatic di-epoxide whose isotropic properties exhibit increased are resistance. It is cast in one piece with skirts which greatly increase the breakdown voltage. This paper discusses the design, fabrication and testing of the new insulator.

  18. High Voltage Power Supply Design Guide for Space

    NASA Technical Reports Server (NTRS)

    Bever, Renate S.; Ruitberg, Arthur P.; Kellenbenz, Carl W.; Irish, Sandra M.

    2006-01-01

    This book is written for newcomers to the topic of high voltage (HV) in space and is intended to replace an earlier (1970s) out-of-print document. It discusses the designs, problems, and their solutions for HV, mostly direct current, electric power, or bias supplies that are needed for space scientific instruments and devices, including stepping supplies. Output voltages up to 30kV are considered, but only very low output currents, on the order of microamperes. The book gives a brief review of the basic physics of electrical insulation and breakdown problems, especially in gases. It recites details about embedment and coating of the supplies with polymeric resins. Suggestions on HV circuit parts follow. Corona or partial discharge testing on the HV parts and assemblies is discussed both under AC and DC impressed test voltages. Electric field analysis by computer on an HV device is included in considerable detail. Finally, there are many examples given of HV power supplies, complete with some of the circuit diagrams and color photographs of the layouts.

  19. Novel cryogenic high voltage insulation breaks with spiral channel

    NASA Astrophysics Data System (ADS)

    Bursikov, A. S.; Voronin, N. M.; Gavrilov, S. M.; Grinchenko, V. A.; Klimchenko, Yu. A.; Korsunskiy, V. A.; Kovalchuk, O. A.; Lancetov, A. A.; Marushin, E. L.; Mednikov, A. A.; Rodin, I. Yu.; Safonov, A. V.

    2014-01-01

    Insulation breaks are used in cryogenic lines with a gas or liquid at temperatures of 4.2-300 K and pressure up to 30 MPa to isolate the parts of electrophysical setup with different electrical potential. Novel cryogenic high voltage (HV) insulation breaks for the electrophysical equipment that uses the effect of superconductivity was developed in the D.V. Efremov Institute of Electrophysical Apparatus (NIIEFA). These insulation breaks consist of glass-reinforced plastic cylinder equipped with channel for cryoagent and stainless steel end fittings. The main design feature of new kind HV break is spiral channel instead of linear one. This approach allowed to increase the breakdown voltage and to decrease the overall dimensions of insulation breaks. The design length of the spiral channel depends on HV requirements and the kind of cryoagent. To provide the wide range of operating voltages, temperatures and pressures the insulation breaks with various dimensions were developed. To provide an acceptance test of breaks as manufactured the special test facility was prepared. Helium tightness test with a level 1.2ṡ10-11 m3ṡPa/s under up to 30 MPa, HV test up to 135 kV and different kinds of mechanical tests could be provided at room and liquid nitrogen temperatures.

  20. High-voltage electrocution causing bulbar dysfunction

    PubMed Central

    Parvathy, G.; Shaji, C. V.; Kabeer, K. A.; Prasanth, S. R.

    2016-01-01

    Electrical shock can result in neurological complications, involving both peripheral and central nervous systems, which may present immediately or later on. High-voltage electrical injuries are uncommonly reported and may predispose to both immediate and delayed neurologic complications. We report the case of a 68-year-old man who experienced a high-voltage electrocution injury, subsequently developed bulbar dysfunction and spontaneously recovered. We describe the development of bulbar palsy following a significant electrical injury, which showed no evidence of this on magnetic resonance imaging. High-voltage electrocution injuries are a serious problem with potential for both immediate and delayed neurologic sequelae. The existing literature has no reports on bulbar dysfunction following electrocution, apart from motor neuron disease. PMID:27365968

  1. Volume Diffuse Dielectric Barrier Discharge Plasma Produced by Nanosecond High Voltage Pulse in Airflow

    NASA Astrophysics Data System (ADS)

    Qi, Haicheng; Gao, Wei; Fan, Zhihui; Liu, Yidi; Ren, Chunsheng

    2016-05-01

    Volume diffuse dielectric barrier discharge (DBD) plasma is produced in subsonic airflow by nanosecond high-voltage pulse power supply with a plate-to-plate discharge cell at 6 mm air gap length. The discharge images, optical emission spectra (OES), the applied voltage and current waveforms of the discharge at the changed airflow rates are obtained. When airflow rate is increased, the transition of the discharge mode and the variations of discharge intensity, breakdown characteristics and the temperature of the discharge plasma are investigated. The results show that the discharge becomes more diffuse, discharge intensity is decreased accompanied by the increased breakdown voltage and time lag, and the temperature of the discharge plasma reduces when airflow of small velocity is introduced into the discharge gap. These phenomena are because that the airflow changes the spatial distribution of the heat and the space charge in the discharge gap. supported by National Natural Science Foundation of China (No. 51437002)

  2. A multi-functional high voltage experiment apparatus for vacuum surface flashover switch research.

    PubMed

    Zeng, Bo; Su, Jian-cang; Cheng, Jie; Wu, Xiao-long; Li, Rui; Zhao, Liang; Fang, Jin-peng; Wang, Li-min

    2015-04-01

    A multifunctional high voltage apparatus for experimental researches on surface flashover switch and high voltage insulation in vacuum has been developed. The apparatus is composed of five parts: pulse generating unit, axial field unit, radial field unit, and two switch units. Microsecond damped ringing pulse with peak-to-peak voltage 800 kV or unipolar pulse with maximum voltage 830 kV is generated, forming transient axial or radial electrical field. Different pulse waveforms and field distributions make up six experimental configurations in all. Based on this apparatus, preliminary experiments on vacuum surface flashover switch with different flashover dielectric materials have been conducted in the axial field unit, and nanosecond pulse is generated in the radial field unit which makes a pulse transmission line in the experiment. Basic work parameters of this kind of switch such as lifetime, breakdown voltage are obtained. PMID:25933850

  3. Potted High Voltage Modules For Space Application

    NASA Astrophysics Data System (ADS)

    Herty, Frank

    2011-10-01

    The European Space Mission GOCE, the Mercury mis- sion BepiColombo and the new High Efficiency Multistage Plasma (HEMP) thruster for the SGEO telecom mission have triggered the development of high voltage power supplies at Astrium Satellites covering different classes of output power (20W up to 1.4kW) and voltages (1kV up to 10kV). These supplies are equipped with encapsulated high voltage modules which have been designed as core functional blocks. The potting material - based on epoxy resin - was developed by Astrium Satellites. It is space-qualified for more than 30 years. Many types of high voltage modules have been manufactured since then, starting from transformer modules for the ERS mission to the modules used for electric propulsion. Technical trends, improvements and future goals of this technology are presented and discussed. New and re- fined processes are presented like the encapsulation of high-power toroidal transformers and the void-free electrical shielding by means of thin copper sheets which are laminated onto the surface of the potting material.

  4. Computer particle simulation of high-voltage solar array arcing onset

    NASA Astrophysics Data System (ADS)

    Cho, Mengu; Hastings, Daniel E.

    1993-04-01

    The operation of a high-voltage solar array in low earth orbit may cause arcing on the negatively biased parts of a solar array. This sets a practical limit on the operational voltage of solar arrays. This paper is the extension of three earlier works regarding high-voltage solar array arcing. The onset of arcing is reproduced by self-consistent computer simulations to verify the arcing onset model developed in the earlier work. It is shown that neutral gas is desorbed from the dielectric surface forming a localized neutral cloud over the surface, and the arcing onset occurs as the gas breakdown at a parameter pd (pressure times distance) much smaller than the Paschen minimum. Analytical expressions for the prebreakdown electron currents and the neutral densities are also derived and used to obtain a parametric formula of the breakdown condition. Arcing rates are calculated including the breakdown condition of the desorbed neutral gas. The theory is compared to the Japanese Space Flyer Unit High-Voltage Solar Array ground experiment and shown to give a reasonable explanation for data relating the arcing rate to the solar array temperature.

  5. High voltage planar multijunction. [Patent application

    SciTech Connect

    Evans, J.C. Jr.; Chai, A.T.; Goradia, C.P.

    1980-12-01

    A solar cell which provides high output voltages, comprises a semiconductor wafer in which a number or array of voltage generating regions or unit cells are formed. Each of the unit cells has two regions of opposite conductivity type (e.g., n+ and p+) which are separated by a gap region. The unit cells are connected together by metal contacts so that their outputs are additive. Field regions, separated by gaps, overlie the unit cells. Cells are formed in both faces of the wafer a circular wafer is employed. NASA

  6. An Inexpensive Source of High Voltage

    ERIC Educational Resources Information Center

    Saraiva, Carlos

    2012-01-01

    As a physics teacher I like recycling old apparatus and using them for demonstrations in my classes. In physics laboratories in schools, sources of high voltage include induction coils or electronic systems that can be bought from companies that sell lab equipment. But these sources can be very expensive. In this article, I will explain how you…

  7. Recommended practices for encapsulating high voltage assemblies

    NASA Technical Reports Server (NTRS)

    Tankisley, E. W.

    1974-01-01

    Preparation and encapsulation of high voltage assemblies are considered. Related problems in encapsulating are brought out in these instructions. A test sampling of four frequently used encapsulating compounds is shown in table form. The purpose of this table is to give a general idea of the working time available and the size of the container required for mixing and de-aerating.

  8. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F.; Yee, Daniel D.

    2010-05-04

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  9. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F.; Yee, Daniel D.

    2008-07-15

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  10. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F.; Yee, Daniel D.

    2007-01-09

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC--DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC--DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  11. A prototype of a high-voltage platform for the KRION ion source

    NASA Astrophysics Data System (ADS)

    Alexandrov, V. S.; Donets, E. E.; Konnov, G. I.; Kosukhin, V. V.; Sidorova, V. O.; Sidorov, A. I.; Shvetsov, V. S.; Trubnikov, G. V.

    2014-09-01

    A high-voltage platform that has been developed for the KRION ion source is described. The platform design concept is explained. The calculations that have been performed of the influence of the design and materials on the source magnetic field make it possible to define a range of materials suitable for manufacturing the platform. The major components of the high-voltage platform, such as a high-voltage power supplier, and decoupling insulators of the high-voltage power source, and the main and supplementary platforms, are chosen and described. It is determined that, to exclude electric breakdowns and corona discharges, one should use an electrically shielded channel with a cryocooler and power supplies for the KRION-source coupling cables.

  12. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Underground high-voltage cables. 75.804 Section... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in...

  13. Disintegration of rocks based on magnetically isolated high voltage discharge.

    PubMed

    He, Mengbing; Jiang, Jinbo; Huang, Guoliang; Liu, Jun; Li, Chengzu

    2013-02-01

    Recently, a method utilizing pulsed power technology for disintegration of rocks arouses great interest of many researchers. In this paper, an improved method based on magnetic switch and the results shown that the uniform dielectrics like plastic can be broken down in water is presented, and the feasible mechanism explaining the breakdown of solid is proposed and proved experimentally. A high voltage pulse of 120 kV, rise time 0.2 μs was used to ignite the discharging channel in solids. When the plasma channel is formed in the solid, the resistance of the channel is quiet small; even if a relatively low voltage is applied on the channel on this occasion, it will produce high current to heat the plasma channel rapidly, and eventually disintegrate the solids. The feasibility of promising industrial application in the drilling and demolition of natural and artificial solid materials by the method we presented is verified by the experiment result in the paper. PMID:23464235

  14. Understanding High Voltage Vacuum Insulators for Microsecond Pulses

    SciTech Connect

    J.B., J; D.A., G; T.L., H; E.J., L; R.D., S; L.K., T; G.E., V

    2007-08-15

    High voltage insulation is one of the main areas of pulsed power research and development since the surface of an insulator exposed to vacuum can fail electrically at an applied field more than an order or magnitude below the bulk dielectric strength of the insulator. This is troublesome for applications where high voltage conditioning of the insulator and electrodes is not practical and where relatively long pulses, on the order of several microseconds, are required. Here we give a summary of our approach to modeling and simulation efforts and experimental investigations for understanding flashover mechanism. The computational work is comprised of both filed and particle-in-cell modeling with state-of-the-art commercial codes. Experiments were performed in using an available 100-kV, 10-{micro}s pulse generator and vacuum chamber. The initial experiments were done with polyethylene insulator material in the shape of a truncated cone cut at +45{sup o} angle between flat electrodes with a gap of 1.0 cm. The insulator was sized so there were no flashovers or breakdowns under nominal operating conditions. Insulator flashover or gap closure was induced by introducing a plasma source, a tuft of velvet, in proximity to the insulator or electrode.

  15. High voltage pulse generator. [Patent application

    DOEpatents

    Fasching, G.E.

    1975-06-12

    An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

  16. Space charge inhibition effect of nano-Fe{sub 3}O{sub 4} on improvement of impulse breakdown voltage of transformer oil based on improved Kerr optic measurements

    SciTech Connect

    Yang, Qing Yu, Fei; Sima, Wenxia; Zahn, Markus

    2015-09-15

    Transformer oil-based nanofluids (NFs) with 0.03 g/L Fe{sub 3}O{sub 4} nanoparticle content exhibit 11.2% higher positive impulse breakdown voltage levels than pure transformer oils. To study the effects of the Fe{sub 3}O{sub 4} nanoparticles on the space charge in transformer oil and to explain why the nano-modified transformer oil exhibits improved impulse breakdown voltage characteristics, the traditional Kerr electro-optic field mapping technique is improved by increasing the length of the parallel-plate electrodes and by using a photodetector array as a high light sensitivity device. The space charge distributions of pure transformer oil and of NFs containing Fe{sub 3}O{sub 4} nanoparticles can be measured using the improved Kerr electro-optic field mapping technique. Test results indicate a significant reduction in space charge density in the transformer oil-based NFs with the Fe{sub 3}O{sub 4} nanoparticles. The fast electrons are captured by the nanoparticles and are converted into slow-charged particles in the NFs, which then reduce the space charge density and result in a more uniform electric field distribution. Streamer propagation in the NFs is also obstructed, and the breakdown strengths of the NFs under impulse voltage conditions are also improved.

  17. Voltage gradients in solar array cavities as possible breakdown sites in spacecraft-charging-induced discharges

    NASA Technical Reports Server (NTRS)

    Stevens, N. J.; Mills, H. E.; Orange, L.

    1981-01-01

    A possible explanation for environmentally-induced discharges on geosynchronous satellites exists in the electric fields formed in the cavities between solar cells - the small gaps formed by the cover slides, solar cells, metallic interconnects and insulating substrate. When exposed to a substorm environment, the cover slides become less negatively charged than the spacecraft ground. If the resultant electric field becomes large enough, then the interconnect could emit electrons (probably by field emission) which could be accelerated to space by the positive voltage on the covers. An experimental study was conducted using a small solar array segment in which the interconnect potential was controlled by a power supply while the cover slides were irradiated by monoenergetic electrons. It was found that discharges could be triggered when the interconnect potential became at least 500 volts negative with respect to the cover slides. Analytical modeling of satellites exposed to substorm environments indicates that such gradients are possible. Therefore, it appears that this trigger mechanism for discharges is possible.

  18. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall...

  19. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall...

  20. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall...

  1. Planar multijunction high voltage solar cell chip

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Kapoor, V. J.; Evans, J. C., Jr.

    1982-01-01

    A new innovative planar multijunction solar cell chip for concentrated sunlight applications is proposed. The chip consists of many voltage-generating regions, called unit cells, which are connected in series within a single silicon wafer, thereby providing a high open-circuit voltage at multiple sun illumination levels. The unit cells are fabricated on 75 micron thick p-type single crystal silicon substrate. Each chip consists of 1.42 x 9.63 mm n(+)/p collecting junctions on the back of the wafer, while the illuminated front surface area is divided into 0.3 micron deep n(+) regions. The fabrication sequence includes standard degreasing and cleaning procedures, double-sided alignment photomasking, introduction of boron and phosphorus impurities, and photolithography. The open circuit voltage of the chip increased rapidly with illumination up to about 4 AM1 suns, and then began to saturate at the sum of the individual unit cell voltages of 3.5 above 4 AM1 suns. A short circuit density per unit cell of 300 mA/sq cm at 20 AM1 suns was observed.

  2. High-voltage portable pulsed power supply fed by low voltage source

    NASA Astrophysics Data System (ADS)

    Rezanejad, Mohammad; Sheikholeslami, Abdolreza; Adabi, Jafar; Valinejad, Mohammadreza

    2016-05-01

    This article proposes a new structure of voltage multiplier for portable pulsed power applications. In this configuration, which is based on capacitor-diode voltage multiplier, the capacitors are charged by low AC input voltage and discharge through the load in series during pulse generation mode. The proposed topology is achieved by integrating of solid-state switches with conventional voltage multiplier, which can increase the low input voltage step by step and generate high-voltage high-frequency pulsed power across the load. After some discussion, simulations and experimental results are provided to verify the effectiveness of the proposed topology.

  3. High voltage system: Plasma interaction summary

    NASA Technical Reports Server (NTRS)

    Stevens, N. John

    1986-01-01

    The possible interactions that could exist between a high voltage system and the space plasma environment are reviewed. A solar array is used as an example of such a system. The emphasis in this review is on the discrepancies that exist in this technology in both flight and ground experiment data. It has been found that, in ground testing, there are facility effects, cell size effects and area scaling uncertainties. For space applications there are area scaling and discharge concerns for an array as well as the influence of the large space structures on the collection process. There are still considerable uncertainties in the high voltage-space plasma interaction technology even after several years of effort.

  4. Electro-optic high voltage sensor

    DOEpatents

    Davidson, James R.; Seifert, Gary D.

    2002-01-01

    A small sized electro-optic voltage sensor capable of accurate measurement of high levels of voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation into the sensor. A polarization beam displacer serves as a filter to separate the input beam into two beams with orthogonal linear polarizations. The beam displacer is oriented in such a way as to rotate the linearly polarized beams such that they enter a Pockels crystal having at a preferred angle of 45 degrees. The beam displacer is therefore capable of causing a linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels electro-optic effect induces a differential phase shift on the major and minor axes of the input beam as it travels through the Pockels crystal, which causes the input beam to be elliptically polarized. A reflecting prism redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization representing the major and minor axes. The system may include a detector for converting the output beams into electrical signals, and a signal processor for determining the voltage based on an analysis of the output beams. The output beams are amplitude modulated by the frequency of the electric field and the amplitude of the output beams is proportional to the magnitude of the electric field, which is related to the voltage being measured.

  5. High voltage spark carbon fiber detection system

    NASA Technical Reports Server (NTRS)

    Yang, L. C.

    1980-01-01

    The pulse discharge technique was used to determine the length and density of carbon fibers released from fiber composite materials during a fire or aircraft accident. Specifications are given for the system which uses the ability of a carbon fiber to initiate spark discharge across a high voltage biased grid to achieve accurate counting and sizing of fibers. The design of the system was optimized, and prototype hardware proved satisfactory in laboratory and field tests.

  6. A high voltage programmable ramp generator

    SciTech Connect

    Upadhyay, J.; Joshi, M. J.; Deshpande, P. P.; Sharma, M. L.; Navathe, C. P.

    2008-05-15

    In this paper, a ramp generator with programmable slope is presented. It consists of a high voltage step generator, followed by integrator. The capacitor and inductor in the integrator are designed such that they can be varied by a microcontroller. This circuit generates two bipolar ramps with fastest speed <1 ns and provides continuous speed variation from 6 to 30 ns for a ramp of 500 V. This is being developed as a part of automated streak camera for deflection of electron beam.

  7. Generation of runaway electrons and X-ray emission during breakdown of atmospheric-pressure air by voltage pulses with an ∼0.5-μs front duration

    SciTech Connect

    Kostyrya, I. D.; Tarasenko, V. F.

    2015-03-15

    Results are presented from experiments on the generation of runaway electron beams and X-ray emission in atmospheric-pressure air by using voltage pulses with an ∼0.5-μs front duration. It is shown that the use of small-curvature-radius spherical cathodes (or other cathodes with small curvature radii) decreases the intensity of the runaway electron beam and X-ray emission. It is found that, at sufficiently high voltages at the electrode gap (U{sub m} ∼ 100 kV), the gap breakdown, the formation of a spark channel, and the generation of a runaway electron beam occur over less than 10 ns. At high values of U{sub m} behind the anode that were reached by increasing the cathode size and the electrode gap length, a supershort avalanche electron beam with a full width at half-maximum (FWHM) of up to ∼100 ps was detected. At voltages of ∼50 kV, the second breakdown regime was revealed in which a runaway electron beam with an FWHM of ∼2 ns was generated, whereas the FWHM of the X-ray pulse increased to ∼100 ns. It is established that the energy of the bulk of runaway electrons decreases with increasing voltage front duration and is ⩽30 keV in the first regime and ⩽10 keV in the second regime.

  8. Generation of runaway electrons and X-ray emission during breakdown of atmospheric-pressure air by voltage pulses with an ˜0.5-μs front duration

    NASA Astrophysics Data System (ADS)

    Kostyrya, I. D.; Tarasenko, V. F.

    2015-03-01

    Results are presented from experiments on the generation of runaway electron beams and X-ray emission in atmospheric-pressure air by using voltage pulses with an ˜0.5-μs front duration. It is shown that the use of small-curvature-radius spherical cathodes (or other cathodes with small curvature radii) decreases the intensity of the runaway electron beam and X-ray emission. It is found that, at sufficiently high voltages at the electrode gap ( U m ˜ 100 kV), the gap breakdown, the formation of a spark channel, and the generation of a runaway electron beam occur over less than 10 ns. At high values of U m behind the anode that were reached by increasing the cathode size and the electrode gap length, a supershort avalanche electron beam with a full width at half-maximum (FWHM) of up to ˜100 ps was detected. At voltages of ˜50 kV, the second breakdown regime was revealed in which a runaway electron beam with an FWHM of ˜2 ns was generated, whereas the FWHM of the X-ray pulse increased to ˜100 ns. It is established that the energy of the bulk of runaway electrons decreases with increasing voltage front duration and is ⩽30 keV in the first regime and ⩽10 keV in the second regime.

  9. Forecasting of high voltage insulation performance: Testing of recommended potting materials and of capacitors

    NASA Technical Reports Server (NTRS)

    Bever, R. S.

    1984-01-01

    Nondestructive high voltage test techniques (mostly electrical methods) are studied to prevent total or catastrophic breakdown of insulation systems under applied high voltage in space. Emphasis is on the phenomenon of partial breakdown or partial discharge (P.D.) as a symptom of insulation quality, notably partial discharge testing under D.C. applied voltage. Many of the electronic parts and high voltage instruments in space experience D.C. applied stress in service, and application of A.C. voltage to any portion thereof would be prohibited. Suggestions include: investigation of the ramp test method for D.C. partial discharge measurements; testing of actual flight-type insulation specimen; perfect plotting resin samples with controlled defects for test; several types of plotting resins and recommendations of the better ones from the electrical characteristics; thermal and elastic properties are also considered; testing of commercial capaciters; and approximate acceptance/rejection/rerating criteria for sample test elements for space use, based on D.C. partial discharge.

  10. Energy harvesting in high voltage measuring techniques

    NASA Astrophysics Data System (ADS)

    Żyłka, Pawel; Doliński, Marcin

    2016-02-01

    The paper discusses selected problems related to application of energy harvesting (that is, generating electricity from surplus energy present in the environment) to supply autonomous ultra-low-power measurement systems applicable in high voltage engineering. As a practical example of such implementation a laboratory model of a remote temperature sensor is presented, which is self-powered by heat generated in a current-carrying busbar in HV- switchgear. Presented system exploits a thermoelectric harvester based on a passively cooled Peltier module supplying micro-power low-voltage dc-dc converter driving energy-efficient temperature sensor, microcontroller and a fibre-optic transmitter. Performance of the model in laboratory simulated conditions are presented and discussed.

  11. Low-profile high-voltage compact gas switch

    SciTech Connect

    Goerz, D.A.; Wilson, M.J.; Speer, R.D.

    1997-06-30

    This paper discusses the development and testing of a low-profile, high-voltage, spark-gap switch designed to be closely coupled with other components into an integrated high-energy pulsed-power source. The switch is designed to operate at 100 kV using SF6 gas pressurized to less than 0.7 MPa. The volume of the switch cavity region is less than 1.5 cm3, and the field stress along the gas-dielectric interface is as high as 130 kV/cm. The dielectric switch body has a low profile that is only I -cm tall at its greatest extent and nominally 2-mm thick over most of its area. This design achieves a very low inductance of less than 5 nH, but results in field stresses exceeding 500 kV/cm in the dielectric material. Field modeling was done to determine the appropriate shape for the highly stressed insulator and electrodes, and special manufacturing techniques were employed to mitigate the usual mechanisms that induce breakdown and failure in solid dielectrics. Static breakdown tests verified that the switch operates satisfactorily at 100 kV levels. The unit has been characterized with different shaped electrodes having nominal gap spacings of 2.0, 2.5, and 3.0 mm. The relationship between self-break voltage and operating pressure agrees well with published data on gas properties, accounting for the field enhancements of the electrode shapes being used. Capacitor discharge tests in a low inductance test fixture exhibited peak currents up to 25 kA with characteristic frequencies of the ringdown circuit ranging from 10 to 20 MHz. The ringdown waveforms and scaling of measured parameters agree well with circuit modeling of the switch and test fixture. Repetitive operation has been demonstrated at moderate rep-rates up to 15 Hz, limited by the power supply being used. Preliminary tests to evaluate lifetime of the compact switch assembly have been encouraging. In one case, after more than 7,000 high-current ringdown tests with approximately 30 C of total charge transferred, the

  12. Flux-freezing breakdown in high-conductivity magnetohydrodynamic turbulence.

    PubMed

    Eyink, Gregory; Vishniac, Ethan; Lalescu, Cristian; Aluie, Hussein; Kanov, Kalin; Bürger, Kai; Burns, Randal; Meneveau, Charles; Szalay, Alexander

    2013-05-23

    The idea of 'frozen-in' magnetic field lines for ideal plasmas is useful to explain diverse astrophysical phenomena, for example the shedding of excess angular momentum from protostars by twisting of field lines frozen into the interstellar medium. Frozen-in field lines, however, preclude the rapid changes in magnetic topology observed at high conductivities, as in solar flares. Microphysical plasma processes are a proposed explanation of the observed high rates, but it is an open question whether such processes can rapidly reconnect astrophysical flux structures much greater in extent than several thousand ion gyroradii. An alternative explanation is that turbulent Richardson advection brings field lines implosively together from distances far apart to separations of the order of gyroradii. Here we report an analysis of a simulation of magnetohydrodynamic turbulence at high conductivity that exhibits Richardson dispersion. This effect of advection in rough velocity fields, which appear non-differentiable in space, leads to line motions that are completely indeterministic or 'spontaneously stochastic', as predicted in analytical studies. The turbulent breakdown of standard flux freezing at scales greater than the ion gyroradius can explain fast reconnection of very large-scale flux structures, both observed (solar flares and coronal mass ejections) and predicted (the inner heliosheath, accretion disks, γ-ray bursts and so on). For laminar plasma flows with smooth velocity fields or for low turbulence intensity, stochastic flux freezing reduces to the usual frozen-in condition. PMID:23698445

  13. High voltage and high current density vertical GaN power diodes

    SciTech Connect

    Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; Moseley, M. W.; Crawford, M. H.; King, M. P.; Allerman, A. A.; Kaplar, R. J.; van Heukelom, M. S.; Wierer, J. J.

    2016-01-01

    We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

  14. High voltage and high current density vertical GaN power diodes

    DOE PAGESBeta

    Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; Moseley, M. W.; Crawford, M. H.; King, M. P.; Allerman, A. A.; Kaplar, R. J.; van Heukelom, M. S.; Wierer, J. J.

    2016-01-01

    We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

  15. Controllable high voltage source having fast settling time

    NASA Technical Reports Server (NTRS)

    Doong, H.; Acuna, M. H. (Inventor)

    1975-01-01

    A high voltage dc stepping power supply for sampling a utilization device such as an electrostatic analyzer has a relatively fast settling time for voltage steps. The supply includes a waveform generator for deriving a low voltage staircase waveform that feeds a relatively long response time power supply, deriving a high output voltage generally equal to a predetermined multiple of the input voltage. In the power supply, an ac voltage modulated by the staircase waveform is applied to a step-up transformer and then to a voltage multiplier stack to form a high voltage, relatively poor replica of the input waveform at an intermediate output terminal. A constant dc source, applied to the input of the power supply, biases the voltage at the intermediate output terminal to be in excess of the predetermined multiple of the input voltage.

  16. Numerical modeling of post current-zero dielectric breakdown in a low voltage circuit breaker

    NASA Astrophysics Data System (ADS)

    Thenkarai Narayanan, Venkat raman

    Oral delivery of macromolecular therapeutics has remained a challenge. Various factors govern principles of oral absorption, including solubility, tissue permeability, stability and dynamics of the gastrointestinal environment. Developing a macromolecular drug carrier for poorly bioavailable drugs is highly desirable. Dendritic polymers are attractive drug delivery vehicles because of their multifunctional surface groups, globular conformation, branched architecture, low poly dispersity and hydrophilic nature. They also offer traditional benefits of macromolecular systems such as extended plasma residence time and reduced systemic toxicity. Developing a poly(amido amine) (PAMAM) dendrimer-based oral drug delivery vehicle is the long-term goal of this research. PAMAM dendrimers can offer advantages in terms of improving solubility and permeability that can ultimately enhance oral absorption of poorly bioavailable drugs. In this dissertation, first the safety and maximum tolerated dose of six different PAMAM dendrimers was studied after oral and systemic administration. Surface charge of these dendrimers significantly influenced their toxicity profile in vivo with cationic systems proving to be more toxic than anionic systems. The inherent permeability of native anionic dendrimers was then evaluated in a mouse model to assess their potential in oral drug delivery. Results suggested that anionic G6.5 dendrimers exhibited appreciable bioavailability with partial degradation observed under in vivo conditions. Subsequently, camptothecin, a model drug used for the treatment of colorectal carcinoma, was attached to PAMAM dendrimers. Antitumor activity revealed that these conjugates were effective in inhibiting growth of cancer cells in vitro. Preliminary efficacy studies conducted in xenograft tumor models also indicated that dendrimer-drug conjugates have potential for oral chemotherapy. Further detailed in vivo studies are needed to demonstrate the utility of PAMAM

  17. High Voltage in Noble Liquids for High Energy Physics

    SciTech Connect

    Rebel, B.; Bernard, E.; Faham, C. H.; Ito, T. M.; Lundberg, B.; Messina, M.; Monrabal, F.; Pereverzev, S. P.; Resnati, F.; Rowson, P. C.; Soderberg, M.; Strauss, T.; Tomas, A.; Va'vra, J.; Wang, H.

    2014-08-22

    A workshop was held at Fermilab November 8-9, 2013 to discuss the challenges of using high voltage in noble liquids. The participants spanned the fields of neutrino, dark matter, and electric dipole moment physics. All presentations at the workshop were made in plenary sessions. This document summarizes the experiences and lessons learned from experiments in these fields at developing high voltage systems in noble liquids.

  18. High-Temperature Enzymatic Breakdown of Cellulose▿†

    PubMed Central

    Wang, Hongliang; Squina, Fabio; Segato, Fernando; Mort, Andrew; Lee, David; Pappan, Kirk; Prade, Rolf

    2011-01-01

    Cellulose is an abundant and renewable biopolymer that can be used for biofuel generation; however, structural entrapment with other cell wall components hinders enzyme-substrate interactions, a key bottleneck for ethanol production. Biomass is routinely subjected to treatments that facilitate cellulase-cellulose contacts. Cellulases and glucosidases act by hydrolyzing glycosidic bonds of linear glucose β-1,4-linked polymers, producing glucose. Here we describe eight high-temperature-operating cellulases (TCel enzymes) identified from a survey of thermobacterial and archaeal genomes. Three TCel enzymes preferentially hydrolyzed soluble cellulose, while two preferred insoluble cellulose such as cotton linters and filter paper. TCel enzymes had temperature optima ranging from 85°C to 102°C. TCel enzymes were stable, retaining 80% of initial activity after 120 h at 85°C. Two modes of cellulose breakdown, i.e., with endo- and exo-acting glucanases, were detected, and with two-enzyme combinations at 85°C, synergistic cellulase activity was observed for some enzyme combinations. PMID:21685160

  19. Safe epoxy encapsulant for high voltage magnetics

    SciTech Connect

    Sanchez, R.O.; Archer, W.E.

    1998-01-01

    This paper describes the use of Formula 456, an aliphatic amine cured epoxy for impregnating coils and high voltage transformers. Sandia has evaluated a number of MDA-free epoxy encapsulants which relied on either anhydride or other aromatic amine curing agents. The use of aliphatic amine curing agents was more recently evaluated and has resulted in the definition of Formula 456 resin. Methylene dianiline (MDA) has been used for more than 20 years as the curing agent for various epoxy formulations throughout the Department of Energy and much of industry. Sandia National Laboratories began the process of replacing MDA with other formulations because of regulations imposed by OSHA on the use of MDA. OSHA has regulated MDA because it is a suspect carcinogen. Typically the elimination of OSHA-regulated materials provides a rare opportunity to qualify new formulations in a range of demanding applications. It was important to take full advantage of that opportunity, although the associated materials qualification effort was costly. Small high voltage transformers are one of those demanding applications. The successful implementation of the new formulation for high reliability transformers will be described. The test results that demonstrate the parts are qualified for use in DOE weapon systems will be presented.

  20. Gas breakdown driven by L band short-pulse high-power microwave

    NASA Astrophysics Data System (ADS)

    Yang, Yi-Ming; Yuan, Cheng-Wei; Qian, Bao-Liang

    2012-12-01

    High power microwave (HPM) driven gas breakdown is a major factor in limiting the radiation and transmission of HPM. A method that HPM driven gas breakdown could be obtained by changing the aperture of horn antenna is studied in this paper. Changing the effective aperture of horn antenna can adjust the electric field in near field zone, leading to gas breakdown. With this method, measurements of air and SF6 breakdowns are carried out on a magnetically insulated transmission-line oscillators, which is capable of generating HPM with pulse duration of 30 ns, and frequency of 1.74 GHz. The typical breakdown waveforms of air and SF6 are presented. Besides, the breakdown field strengths of the two gases are derived at different pressures. It is found that the effects of air and SF6 breakdown on the transmission of HPM are different: air breakdown mainly shortens the pulse width of HPM while SF6 breakdown mainly reduces the peak output power of HPM. The electric field threshold of SF6 is about 2.4 times larger than that of air. These differences suggest that gas properties have a great effect on the transmission characteristic of HPM in gases.

  1. Gas breakdown driven by L band short-pulse high-power microwave

    SciTech Connect

    Yang Yiming; Yuan Chengwei; Qian Baoliang

    2012-12-15

    High power microwave (HPM) driven gas breakdown is a major factor in limiting the radiation and transmission of HPM. A method that HPM driven gas breakdown could be obtained by changing the aperture of horn antenna is studied in this paper. Changing the effective aperture of horn antenna can adjust the electric field in near field zone, leading to gas breakdown. With this method, measurements of air and SF{sub 6} breakdowns are carried out on a magnetically insulated transmission-line oscillators, which is capable of generating HPM with pulse duration of 30 ns, and frequency of 1.74 GHz. The typical breakdown waveforms of air and SF{sub 6} are presented. Besides, the breakdown field strengths of the two gases are derived at different pressures. It is found that the effects of air and SF{sub 6} breakdown on the transmission of HPM are different: air breakdown mainly shortens the pulse width of HPM while SF{sub 6} breakdown mainly reduces the peak output power of HPM. The electric field threshold of SF{sub 6} is about 2.4 times larger than that of air. These differences suggest that gas properties have a great effect on the transmission characteristic of HPM in gases.

  2. Architecture for a High-to-Medium-Voltage Power Converter

    NASA Technical Reports Server (NTRS)

    Vorpenian, Vatche

    2008-01-01

    A power converter now undergoing development is required to operate at a DC input potential ranging between 5.5 and 10 kV and a DC output potential of 400 V at a current up to 25 A. This power converter is also required to be sufficiently compact and reliable to fit and operate within the confines of a high-pressure case to be lowered to several miles (approx.5 km) below the surface of the ocean. The architecture chosen to satisfy these requirements calls for a series/ parallel arrangement of 48 high-frequency, pulse-width-modulation (PWM), transformer-isolation DC-to-DC power converter blocks. The input sides of the converter blocks would be connected in series so that the input potential would be divided among them, each of them being exposed to an input potential of no more than 10 kV/48 . 210 V. The series connection of inputs would also enforce a requirement that all the converter blocks operate at the same input current. The outputs of the converter blocks would be connected in a matrix comprising 6 parallel legs, each leg being a cascade of eight outputs wired in series (see figure). All the converter blocks would be identical within the tolerances of the values of their components. A single voltage feedback loop would regulate the output potential. All the converter blocks would be driven by the same PWM waveform generated by this feedback loop. The power transformer of each converter block would have a unity turns ratio and would be capable of withstanding as much as 10 kVDC between its primary and secondary windings. (Although, in general, the turns ratio could be different from unity, the simplest construction for minimizing leakage and maximizing breakdown voltage is attained at a turns ratio of unity.)

  3. Accelerator System Development at High Voltage Engineering

    SciTech Connect

    Klein, M. G.; Gottdang, A.; Haitsma, R. G.; Mous, D. J. W.

    2009-03-10

    Throughout the years, HVE has continuously extended the capabilities of its accelerator systems to meet the rising demands from a diverse field of applications, among which are deep level ion implantation, micro-machining, neutron production for biomedical research, isotope production or accelerator mass spectrometry. Characteristic for HVE accelerators is the coaxial construction of the all solid state power supply around the acceleration tubes. With the use of solid state technology, the accelerators feature high stability and very low ripple. Terminal voltages range from 1 to 6 MV for HVE Singletrons and Tandetrons. The high-current versions of these accelerators can provide ion beams with powers of several kW. In the last years, several systems have been built with terminal voltages of 1.25 MV, 2 MV and 5 MV. Recently, the first system based on a 6 MV Tandetron has passed the factory tests. In this paper we describe the characteristics of the HVE accelerator systems and present as example recent systems.

  4. 30 CFR 77.810 - High-voltage equipment; grounding.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage equipment; grounding. 77.810 Section 77.810 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE... COAL MINES Surface High-Voltage Distribution § 77.810 High-voltage equipment; grounding....

  5. 30 CFR 77.810 - High-voltage equipment; grounding.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage equipment; grounding. 77.810 Section 77.810 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE... COAL MINES Surface High-Voltage Distribution § 77.810 High-voltage equipment; grounding....

  6. Micrometer-scale electrical breakdown in high-density fluids with large density fluctuations: Numerical model and experimental assessment.

    PubMed

    Muneoka, Hitoshi; Urabe, Keiichiro; Stauss, Sven; Terashima, Kazuo

    2015-04-01

    Experimentally observed electrical breakdown voltages (U(B)) in high-pressure gases and supercritical fluids deviate from classical theories for low-pressure gas discharges, and the underlying breakdown mechanisms for the high-density fluids making the U(B) differ from those in the classical discharges are not yet well understood. In this study, we developed an electrical breakdown model for the high-density fluids taking into account the effects of density fluctuations and ion-enhanced field emission (IEFE). The model is based on the concept that a critical anomaly of the U(B) (local minimum near the critical point) is caused by long mean free electron path leading to a large first Townsend coefficient in locally low-density spatial domains generated by the density fluctuations. Also, a modified Paschen's curve considering the effect of the IEFE on the second Townsend coefficient was used to reproduce the U(B) curve in the high-density fluids. Calculations based on the novel model showed good agreements with the experimentally measured U(B) even near the critical point and it also suggested that the critical anomaly of the U(B) depends on the gap distance. These results indicate that both the density fluctuations and the IEFE have to be considered to comprehend the plasmas in high-density and density-fluctuating fluids. PMID:25974500

  7. Micrometer-scale electrical breakdown in high-density fluids with large density fluctuations: Numerical model and experimental assessment

    NASA Astrophysics Data System (ADS)

    Muneoka, Hitoshi; Urabe, Keiichiro; Stauss, Sven; Terashima, Kazuo

    2015-04-01

    Experimentally observed electrical breakdown voltages (UB) in high-pressure gases and supercritical fluids deviate from classical theories for low-pressure gas discharges, and the underlying breakdown mechanisms for the high-density fluids making the UB differ from those in the classical discharges are not yet well understood. In this study, we developed an electrical breakdown model for the high-density fluids taking into account the effects of density fluctuations and ion-enhanced field emission (IEFE). The model is based on the concept that a critical anomaly of the UB (local minimum near the critical point) is caused by long mean free electron path leading to a large first Townsend coefficient in locally low-density spatial domains generated by the density fluctuations. Also, a modified Paschen's curve considering the effect of the IEFE on the second Townsend coefficient was used to reproduce the UB curve in the high-density fluids. Calculations based on the novel model showed good agreements with the experimentally measured UB even near the critical point and it also suggested that the critical anomaly of the UB depends on the gap distance. These results indicate that both the density fluctuations and the IEFE have to be considered to comprehend the plasmas in high-density and density-fluctuating fluids.

  8. Electromechanical Breakdown of Barrier-Type Anodized Aluminum Oxide Thin Films Under High Electric Field Conditions

    NASA Astrophysics Data System (ADS)

    Chen, Jianwen; Yao, Manwen; Yao, Xi

    2016-02-01

    Barrier-type anodized aluminum oxide (AAO) thin films were formed on a polished aluminum substrate via electrochemical anodization in 0.1 mol/L aqueous solution of ammonium pentaborate. Electromechanical breakdown occurred under high electric field conditions as a result of the accumulation of mechanical stress in the film-substrate system by subjecting it to rapid thermal treatment. Before the breakdown event, the electricity of the films was transported in a highly nonlinear way. Immediately after the breakdown event, dramatic cracking of the films occurred, and the cracks expanded quickly to form a mesh-like dendrite network. The breakdown strength was significantly reduced because of the electromechanical coupling effect, and was only 34% of the self-healing breakdown strength of the AAO film.

  9. Complete low power controller for high voltage power systems

    SciTech Connect

    Sumner, R.; Blanar, G.

    1997-12-31

    The MHV100 is a custom CMOS integrated circuit, developed for the AMS experiment. It provides complete control for a single channel high voltage (HV) generator and integrates all the required digital communications, D to A and A to D converters, the analog feedback loop and output drivers. This chip has been designed for use in both distributed high voltage systems or for low cost single channel high voltage systems. The output voltage and current range is determined by the external components.

  10. High Voltage Power Transmission for Wind Energy

    NASA Astrophysics Data System (ADS)

    Kim, Young il

    The high wind speeds and wide available area at sea have recently increased the interests on offshore wind farms in the U.S.A. As offshore wind farms become larger and are placed further from the shore, the power transmission to the onshore grid becomes a key feature. Power transmission of the offshore wind farm, in which good wind conditions and a larger installation area than an onshore site are available, requires the use of submarine cable systems. Therefore, an underground power cable system requires unique design and installation challenges not found in the overhead power cable environment. This paper presents analysis about the benefit and drawbacks of three different transmission solutions: HVAC, LCC/VSC HVDC in the grid connecting offshore wind farms and also analyzed the electrical characteristics of underground cables. In particular, loss of HV (High Voltage) subsea power of the transmission cables was evaluated by the Brakelmann's theory, taking into account the distributions of current and temperature.

  11. High-frequency graphene voltage amplifier.

    PubMed

    Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

    2011-09-14

    While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date. PMID:21805988

  12. Atmospheric pressure microplasmas in ZnO nanoforests under high voltage stress

    NASA Astrophysics Data System (ADS)

    Noor, Nafisa; Manthina, Venkata; Cil, Kadir; Adnane, Lhacene; Agrios, Alexander G.; Gokirmak, Ali; Silva, Helena

    2015-09-01

    Atmospheric pressure ZnO microplasmas have been generated by high amplitude single pulses and DC voltages applied using micrometer-separated probes on ZnO nanoforests. The high voltage stress triggers plasma breakdown and breakdown in the surrounding air followed by sublimation of ZnO resulting in strong blue and white light emission with sharp spectral lines and non-linear current-voltage characteristics. The nanoforests are made of ZnO nanorods (NRs) grown on fluorine doped tin oxide (FTO) glass, poly-crystalline silicon and bulk p-type silicon substrates. The characteristics of the microplasmas depend strongly on the substrate and voltage parameters. Plasmas can be obtained with pulse durations as short as ˜1 μs for FTO glass substrate and ˜100 ms for the silicon substrates. Besides enabling plasma generation with shorter pulses, NRs on FTO glass substrate also lead to better tunability of the operating gas temperature. Hot and cold ZnO microplasmas have been observed with these NRs on FTO glass substrate. Sputtering of nanomaterials during plasma generation in the regions surrounding the test area has also been noticed and result in interesting ZnO nanostructures (`nano-flowers' and `nano-cauliflowers'). A practical way of generating atmospheric pressure ZnO microplasmas may lead to various lighting, biomedical and material processing applications.

  13. Fundamental research into high voltages for further development of electric power distribution systems

    NASA Astrophysics Data System (ADS)

    Gockenbach, E.; Buch, W.; Crucius, M.; Diessner, A.; Luehrmann, H.

    1982-05-01

    In order to guarantee correct electric power distribution, the use of voltages between 765 and 1200 kV was investigated. This fundamental research was conducted in an 1800 kV outdoor test station. After describing the connection and protection devices of the three stage high voltage generating transformer, and the tested equipment which has to withstand humidity, rain, dirt accumulation, snow, ice, and wind, the recording equipment and the transient measurements which result from breakdowns in the SF6 gas insulated equipment and from flashovers in long air gaps, are presented. To limit the effects of high voltage oscillation, damping resistance and short cicuiting equipment on the primary side of the transformers were used. In this way, the overvoltages were prevented from rising to dangerous levels.

  14. Pulsed electric breakdown in adipose tissue

    NASA Astrophysics Data System (ADS)

    Kolb, Juergen F.; Scully, Noah; Paithankar, Dilip

    2011-08-01

    High voltage pulses of sub-microsecond duration can instigate electrical breakdown in adipose tissue, which is followed by a spark discharge. Breakdown voltages are generally lower than observed for purified lipids but higher than for air. Development of breakdown for the repetitive application of pulses resembles a gradual and stochastic process as reported for partial discharges in solid dielectrics. The inflicted tissue damage itself is confined to the gap between electrodes, providing a method to use spark discharges as a precise surgical technique.

  15. Stimulation of high-frequency breakdown of gas in Uragan-3M torsatron by runaway electrons

    NASA Astrophysics Data System (ADS)

    Tarasov, I. K.; Tarasov, M. I.; Sitnikov, D. A.; Pashnev, V. K.; Lytova, M. A.

    2016-01-01

    In experiments on confinement and heating of plasma in the Uragan-3M torsatron, the method of high-frequency breakdown of the working gas is used. In these experiments, in conditions of a relatively stable magnetic field, the rf power supplied to the setup chamber has a frequency close to the ion-cyclotron frequency. Such a method of gas breakdown is not always sufficiently reliable. In our experiments, preliminary ionization of the working gas by the run-away electron beam is used for stabilizing the breakdown. This work contains the results of experiments on enhancement of the runaway electron beam and on the interaction of the runaway electron beam in the Uragan-3M torsatron with the HF electromagnetic pump field. This enables us to formulate a number of recommendations for using spontaneously formed beams of accelerated particles for stimulating the rf breakdown. Our results confirm the possibility of gas breakdown by runaway electrons.

  16. A new latch-free LIGBT on SOI with very high current density and low drive voltage

    NASA Astrophysics Data System (ADS)

    Olsson, J.; Vestling, L.; Eklund, K.-H.

    2016-01-01

    A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latch-up problems. The new LIGBT has the unique property of independent scaling of the input control device, i.e. LDMOS, and the output part of the device, i.e. the p-n-p part. This allows for additional freedom in designing and optimizing the device properties. Breakdown voltage of over 200 V, on-state current density over 3 A/mm, specific on-resistance below 190 mΩ mm2, and latch-free operation is demonstrated.

  17. Physics-Based Compact Model for CIGS and CdTe Solar Cells: From Voltage-Dependent Carrier Collection to Light-Enhanced Reverse Breakdown: Preprint

    SciTech Connect

    Sun, Xingshu; Alam, Muhammad Ashraful; Raguse, John; Garris, Rebekah; Deline, Chris; Silverman, Timothy

    2015-10-15

    In this paper, we develop a physics-based compact model for copper indium gallium diselenide (CIGS) and cadmium telluride (CdTe) heterojunction solar cells that attributes the failure of superposition to voltage-dependent carrier collection in the absorber layer, and interprets light-enhanced reverse breakdown as a consequence of tunneling-assisted Poole-Frenkel conduction. The temperature dependence of the model is validated against both simulation and experimental data for the entire range of bias conditions. The model can be used to characterize device parameters, optimize new designs, and most importantly, predict performance and reliability of solar panels including the effects of self-heating and reverse breakdown due to partial-shading degradation.

  18. High voltage supply for neutron tubes in well logging applications

    DOEpatents

    Humphreys, D. Russell

    1989-01-01

    A high voltage supply is provided for a neutron tube used in well logging. The "biased pulse" supply of the invention combines DC and "full pulse" techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

  19. Femtosecond laser guiding of a high-voltage discharge and the restoration of dielectric strength in air and nitrogen

    SciTech Connect

    Leonov, S. B.; Firsov, A. A.; Shurupov, M. A.; Michael, J. B.; Shneider, M. N.; Miles, R. B.; Popov, N. A.

    2012-12-15

    The use of a low energy, high peak intensity (>100 TW/cm{sup 2}) femtosecond laser pulse is investigated for guiding and control of a sub-microsecond high voltage discharge. Study of the laser induced plasma channel and measurements of the field required for breakdown in air and nitrogen at atmospheric pressure are presented. Direct imaging of the dynamics of the discharge breakdown shows effective laser guiding. The effectiveness of laser guiding is shown to be critically dependent on the laser focusing geometry, timing, and location relative to the electrodes.

  20. Femtosecond laser guiding of a high-voltage discharge and the restoration of dielectric strength in air and nitrogen

    NASA Astrophysics Data System (ADS)

    Leonov, S. B.; Firsov, A. A.; Shurupov, M. A.; Michael, J. B.; Shneider, M. N.; Miles, R. B.; Popov, N. A.

    2012-12-01

    The use of a low energy, high peak intensity (>100 TW/cm2) femtosecond laser pulse is investigated for guiding and control of a sub-microsecond high voltage discharge. Study of the laser induced plasma channel and measurements of the field required for breakdown in air and nitrogen at atmospheric pressure are presented. Direct imaging of the dynamics of the discharge breakdown shows effective laser guiding. The effectiveness of laser guiding is shown to be critically dependent on the laser focusing geometry, timing, and location relative to the electrodes.

  1. Conceptual definition of a high voltage power supply test facility

    NASA Technical Reports Server (NTRS)

    Biess, John J.; Chu, Teh-Ming; Stevens, N. John

    1989-01-01

    NASA Lewis Research Center is presently developing a 60 GHz traveling wave tube for satellite cross-link communications. The operating voltage for this new tube is - 20 kV. There is concern about the high voltage insulation system and NASA is planning a space station high voltage experiment that will demonstrate both the 60 GHz communications and high voltage electronics technology. The experiment interfaces, requirements, conceptual design, technology issues and safety issues are determined. A block diagram of the high voltage power supply test facility was generated. It includes the high voltage power supply, the 60 GHz traveling wave tube, the communications package, the antenna package, a high voltage diagnostics package and a command and data processor system. The interfaces with the space station and the attached payload accommodations equipment were determined. A brief description of the different subsystems and a discussion of the technology development needs are presented.

  2. Breakdown properties of epoxy nanodielectric

    SciTech Connect

    Tuncer, Enis; Cantoni, Claudia; More, Karren Leslie; James, David Randy; Polyzos, Georgios; Sauers, Isidor; Ellis, Alvin R

    2010-01-01

    Recent developments in polymeric dielectric nanocomposites have shown that these novel materials can improve design of high voltage (hv) components and systems. Some of the improvements can be listed as reduction in size (compact hv systems), better reliability, high energy density, voltage endurance, and multifunctionality. Nanodielectric systems demonstrated specific improvements that have been published in the literature by different groups working with electrical insulation materials. In this paper we focus on the influence of in-situ synthesized titanium dioxide (TiO{sub 2}) nanoparticles on the dielectric breakdown characteristics of an epoxy-based nanocomposite system. The in-situ synthesis of the particles creates small nanoparticles on the order of 10 nm with narrow size distribution and uniform particle dispersion in the matrix. The breakdown strength of the nanocomposite was studied as a function of TiO{sub 2} concentration at cryogenic temperatures. It was observed that between 2 and 6wt% yields high breakdown values for the nanodielectric.

  3. High breakdown-strength composites from liquid silicone rubbers

    NASA Astrophysics Data System (ADS)

    Vudayagiri, Sindhu; Zakaria, Shamsul; Yu, Liyun; Sager Hassouneh, Suzan; Benslimane, Mohamed; Ladegaard Skov, Anne

    2014-10-01

    In this paper we investigate the performance of liquid silicone rubbers (LSRs) as dielectric elastomer transducers. Commonly used silicones in this application include room-temperature vulcanisable (RTV) silicone elastomers and composites thereof. Pure LSRs and their composites with commercially available fillers (an anatase TiO2, a core-shell TiO2-SiO2 and a CaCu3Ti4O12 filler) are evaluated with respect to dielectric permittivity, elasticity (Young’s modulus) and electrical breakdown strength. Film formation properties are also evaluated. The best-performing formulations are those with anatase TiO2 nanoparticles, where the highest relative dielectric permittivity of 5.6 is obtained, and with STX801, a core-shell morphology TiO2-SiO2 filler from Evonik, where the highest breakdown strength of 173 V μm-1 is obtained.

  4. A new very high voltage semiconductor switch

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1985-01-01

    A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

  5. Neutron-induced single event burnout in high voltage electronics

    SciTech Connect

    Normand, E.; Wert, J.L.; Oberg, D.L.; Majewski, P.P.; Voss, P.; Wender, S.A.

    1997-12-01

    Energetic neutrons with an atmospheric neutron spectrum, which were demonstrated to induce single event burnout in power MOSFETs, have been shown to induce burnout in high voltage (>3,000V) electronics when operated at voltages as low as 50% of rated voltage. The laboratory failure rates correlate well with field failure rates measured in Europe.

  6. Scintillation Breakdowns in Chip Tantalum Capacitors

    NASA Technical Reports Server (NTRS)

    Teverovsky, Alexander

    2008-01-01

    Scintillations in solid tantalum capacitors are momentarily local breakdowns terminated by a self-healing or conversion to a high-resistive state of the manganese oxide cathode. This conversion effectively caps the defective area of the tantalum pentoxide dielectric and prevents short-circuit failures. Typically, this type of breakdown has no immediate catastrophic consequences and is often considered as nuisance rather than a failure. Scintillation breakdowns likely do not affect failures of parts under surge current conditions, and so-called "proofing" of tantalum chip capacitors, which is a controllable exposure of the part after soldering to voltages slightly higher than the operating voltage to verify that possible scintillations are self-healed, has been shown to improve the quality of the parts. However, no in-depth studies of the effect of scintillations on reliability of tantalum capacitors have been performed so far. KEMET is using scintillation breakdown testing as a tool for assessing process improvements and to compare quality of different manufacturing lots. Nevertheless, the relationship between failures and scintillation breakdowns is not clear, and this test is not considered as suitable for lot acceptance testing. In this work, scintillation breakdowns in different military-graded and commercial tantalum capacitors were characterized and related to the rated voltages and to life test failures. A model for assessment of times to failure, based on distributions of breakdown voltages, and accelerating factors of life testing are discussed.

  7. Breakdown characteristics of xenon HID Lamps

    NASA Astrophysics Data System (ADS)

    Babaeva, Natalia; Sato, Ayumu; Brates, Nanu; Noro, Koji; Kushner, Mark

    2009-10-01

    The breakdown characteristics of mercury free xenon high intensity discharge (HID) lamps exhibit a large statistical time lag often having a large scatter in breakdown voltages. In this paper, we report on results from a computational investigation of the processes which determine the ignition voltages for positive and negative pulses in commercial HID lamps having fill pressures of up to 20 atm. Steep voltage rise results in higher avalanche electron densities and earlier breakdown times. Circuit characteristics also play a role. Large ballast resistors may limit current to the degree that breakdown is quenched. The breakdown voltage critically depends on cathode charge injection by electric field emission (or other mechanisms) which in large part controls the statistical time lag for breakdown. For symmetric lamps, ionization waves (IWs) simultaneously develop from the bottom and top electrodes. Breakdown typically occurs when the top and bottom IWs converge. Condensed salt layers having small conductivities on the inner walls of HID lamps and on the electrodes can influence the ignition behavior. With these layers, IWs tend to propagate along the inner wall and exhibit a different structure depending on the polarity.

  8. A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain

    NASA Astrophysics Data System (ADS)

    Deng, Yong-Hui; Xie, Gang; Wang, Tao; Sheng, Kuang

    2013-09-01

    In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base field plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3 × 1017 cm-3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT (VBJT) with comparable breakdown voltage (3357 V) shows that the minimum base width of 0.25 μm and base doping as high as 8 × 1017 cm-3 contribute to a maximum current gain of only 128.

  9. Universal trench design method for a high-voltage SOI trench LDMOS

    NASA Astrophysics Data System (ADS)

    Xiarong, Hu; Bo, Zhang; Xiaorong, Luo; Zhaoji, Li

    2012-07-01

    The design method for a high-voltage SOI trench LDMOS for various trench permittivities, widths and depths is introduced. A universal method for efficient design is presented for the first time, taking the trade-off between breakdown voltage (BV) and specific on-resistance (Rs,on) into account. The high-k (relative permittivity) dielectric is suitable to fill a shallow and wide trench while the low-k dielectric is suitable to fill a deep and narrow trench. An SOI LDMOS with a vacuum trench in the drift region is also discussed. Simulation results show that the high FOM BV2/Rs,on can be achieved with a trench filled with the low-k dielectric due to its shortened cell-pitch.

  10. SECONDARY ELECTRON TRAJECTORIES IN HIGH-GRADIENT VACUUM INSULATORS WITH FAST HIGH-VOLTAGE PULSES

    SciTech Connect

    Chen, Y; Blackfield, D; Nelson, S D; Poole, B

    2010-04-21

    Vacuum insulators composed of alternating layers of metal and dielectric, known as high-gradient insulators (HGIs), have been shown to withstand higher electric fields than conventional insulators. Primary or secondary electrons (emitted from the insulator surface) can be deflected by magnetic fields from external sources, the high-current electron beam, the conduction current in the transmission line, or the displacement current in the insulator. These electrons are deflected either toward or away from the insulator surface and this affects the performance of the vacuum insulator. This paper shows the effects of displacement current from short voltage pulses on the performance of high gradient insulators. Generally, vacuum insulator failure is due to surface flashover, initiated by electrons emitted from a triple junction. These electrons strike the insulator surface thus producing secondary electrons, and can lead to a subsequent electron cascade along the surface. The displacement current in the insulator can deflect electrons either toward or away from the insulator surface, and affects the performance of the vacuum insulator when the insulator is subjected to a fast high-voltage pulse. Vacuum insulators composed of alternating layers of metal and dielectric, known as high-gradient insulators (HGIs), have been shown to withstand higher electric fields than conventional insulators. HGIs, being tolerant of the direct view of high-current electron and ion beams, and having desirable RF properties for accelerators, are a key enabling technology for the dielectric-wall accelerators (DWA) being developed at Lawrence Livermore National Laboratory (LLNL). Characteristically, insulator surface breakdown thresholds go up as the applied voltage pulse width decreases. To attain the highest accelerating gradient in the DWA, short accelerating voltage pulses are only applied locally, along the HGI accelerator tube, in sync with the charged particle bunch, and the effects of

  11. High-Voltage, High-Power Gaseous Electronics Switch For Electric Grid Power Conversion

    NASA Astrophysics Data System (ADS)

    Sommerer, Timothy J.

    2014-05-01

    We are developing a high-voltage, high-power gas switch for use in low-cost power conversion terminals on the electric power grid. Direct-current (dc) power transmission has many advantages over alternating current (ac) transmission, but at present the high cost of ac-dc power interconversion limits the use of dc. The gas switch we are developing conducts current through a magnetized cold cathode plasma in hydrogen or helium to reach practical current densities > 1 A/cm2. Thermal and sputter damage of the cathode by the incident ion flux is a major technical risk, and is being addressed through use of a ``self-healing'' liquid metal cathode (eg, gallium). Plasma conditions and cathode sputtering loss are estimated by analyzing plasma spectral emission. A particle-in-cell plasma model is used to understand various aspects of switch operation, including the conduction phase (where plasma densities can exceed 1013 cm-3), the switch-open phase (where the high-voltage must be held against gas breakdown on the left side of Paschen's curve), and the switching transitions (especially the opening process, which is initiated by forming an ion-matrix sheath adjacent to a control grid). The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000298.

  12. Electromagnetic compatibility in high-voltage engineering

    NASA Astrophysics Data System (ADS)

    Vanhouten, Marinus Albertus

    1990-09-01

    Electro Magnetic Compatibility (EMC) concepts for an efficient and consistant approach to practical interference problems are described. A critical analysis of 'grounding' is given. The design of a 'differentiated/integrated' system to measure fast voltage transients is described. Measurements of steep transient voltages across interruptions in a Gas Insulated Switchear (GIS) installation, due to switching actions, are presented. Available means to reduce the influence of this interference source on the measuring are discussed. General conclusions are that general, linear and basic design methods for the protection of electronics and (large) interconnected electrical systems against interference can be developed which can save production costs and research time. The design methods described concentrate on the reduction of dangerous voltages between critical points which can be achieved by correct layout choice.

  13. Solid electrolyte: The key for high-voltage lithium batteries

    SciTech Connect

    Li, Juchuan; Ma, Cheng; Chi, Miaofang; Liang, Chengdu; Dudney, Nancy J.

    2014-10-14

    A solid-state high-voltage (5 V) lithium battery is demonstrated to deliver a cycle life of 10 000 with 90% capacity retention. Furthermore, the solid electrolyte enables the use of high-voltage cathodes and Li anodes with minimum side reactions, leading to a high Coulombic efficiency of 99.98+%.

  14. Electric field and space charge distribution measurement in transformer oil struck by impulsive high voltage

    NASA Astrophysics Data System (ADS)

    Sima, Wenxia; Guo, Hongda; Yang, Qing; Song, He; Yang, Ming; Yu, Fei

    2015-08-01

    Transformer oil is widely used in power systems because of its excellent insulation properties. The accurate measurement of electric field and space charge distribution in transformer oil under high voltage impulse has important theoretical and practical significance, but still remains challenging to date because of its low Kerr constant. In this study, the continuous electric field and space charge distribution over time between parallel-plate electrodes in high-voltage pulsed transformer oil based on the Kerr effect is directly measured using a linear array photoelectrical detector. Experimental results demonstrate the applicability and reliability of this method. This study provides a feasible approach to further study the space charge effects and breakdown mechanisms in transformer oil.

  15. From organized high throughput data to phenomenological theory: The example of dielectric breakdown

    NASA Astrophysics Data System (ADS)

    Kim, Chiho; Pilania, Ghanshyam; Ramprasad, Rampi

    Understanding the behavior (and failure) of dielectric insulators experiencing extreme electric fields is critical to the operation of present and emerging electrical and electronic devices. Despite its importance, the development of a predictive theory of dielectric breakdown has remained a challenge, owing to the complex multiscale nature of this process. Here, we focus on the intrinsic dielectric breakdown field of insulators--the theoretical limit of breakdown determined purely by the chemistry of the material, i.e., the elements the material is composed of, the atomic-level structure, and the bonding. Starting from a benchmark dataset (generated from laborious first principles computations) of the intrinsic dielectric breakdown field of a variety of model insulators, simple predictive phenomenological models of dielectric breakdown are distilled using advanced statistical or machine learning schemes, revealing key correlations and analytical relationships between the breakdown field and easily accessible material properties. The models are shown to be general, and can hence guide the screening and systematic identification of high electric field tolerant materials.

  16. Surface voltage gradient role in high voltage solar array-plasma interaction: Center Director's discretionary fund

    NASA Technical Reports Server (NTRS)

    Carruth, M. R., Jr.

    1985-01-01

    A large amount of experimental and analytical effort has been directed toward understanding the plasma sheath growth and discharge phenomena which lead to high voltage solar array-space plasma interactions. An important question which has not been addressed is how the surface voltage gradient on such an array may affect these interactions. The results of this study indicate that under certain conditions, the voltage gradient should be taken into account when evaluating the effect on a solar array operating in a plasma environment.

  17. Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

    NASA Technical Reports Server (NTRS)

    Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

    2011-01-01

    A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

  18. Comparative analysis of breakdown mechanism in thin SiO2 oxide films in metal-oxide-semiconductor structures under the action of heavy charged particles and a pulsed voltage

    NASA Astrophysics Data System (ADS)

    Zinchenko, V. F.; Lavrent'ev, K. V.; Emel'yanov, V. V.; Vatuev, A. S.

    2016-02-01

    Regularities in the breakdown of thin SiO2 oxide films in metal-oxide-semiconductors structures of power field-effect transistors under the action of single heavy charged particles and a pulsed voltage are studied experimentally. Using a phenomenological approach, we carry out comparative analysis of physical mechanisms and energy criteria of the SiO2 breakdown in extreme conditions of excitation of the electron subsystem in the subpicosecond time range.

  19. Mechanism of formation of subnanosecond current front in high-voltage pulse open discharge

    NASA Astrophysics Data System (ADS)

    Schweigert, I. V.; Alexandrov, A. L.; Zakrevsky, Dm. E.; Bokhan, P. A.

    2014-11-01

    The mechanism of subnanosecond current front rise observed previously in the experiment in high-voltage pulse open discharge in helium is studied in kinetic particle-in-cell simulations. The Boltzmann equations for electrons, ions, and fast atoms are solved self-consistently with the Poisson equations for the electrical potential. The partial contributions to the secondary electron emission from the ions, fast atoms, photons, and electrons, bombarding the electrode, are calculated. In simulations, as in the experiment, the discharge glows between two symmetrical cathodes and the anode grid in the midplane at P =6 Torr and the applied voltage of 20 kV. The electron avalanche development is considered for two experimental situations during the last stage of breakdown: (i) with constant voltage and (ii) with decreasing voltage. For case (i), the subnanosecond current front rise is set by photons from the collisional excitation transfer reactions. For the case (ii), the energetic electrons swamp the cathode during voltage drop and provide the secondary electron emission for the subnanosecond current rise, observed in the experiment.

  20. Electrical system architecture having high voltage bus

    DOEpatents

    Hoff, Brian Douglas; Akasam, Sivaprasad

    2011-03-22

    An electrical system architecture is disclosed. The architecture has a power source configured to generate a first power, and a first bus configured to receive the first power from the power source. The architecture also has a converter configured to receive the first power from the first bus and convert the first power to a second power, wherein a voltage of the second power is greater than a voltage of the first power, and a second bus configured to receive the second power from the converter. The architecture further has a power storage device configured to receive the second power from the second bus and deliver the second power to the second bus, a propulsion motor configured to receive the second power from the second bus, and an accessory motor configured to receive the second power from the second bus.

  1. A compact high voltage pulse generator

    SciTech Connect

    Rohwein, G.J.; Babcock, S.R.

    1994-07-01

    A compact, easily transportable, pulse generator has been developed for a variety of applications that require a pulse duration in the range of 1 {mu} sec., voltages from 150 to 300 KV and current levels from 2,000 to 3,000 amps. The generator has a simple cylindrical configuration and modular construction to facilitate assembly and service. The generator may be operated single-pulse or repetitively at pulse repetition rates to 50 Hz in a burst mode.

  2. Modeling Breakdown and Electron Orbits in High-Gradient Accelerating Cavities

    NASA Astrophysics Data System (ADS)

    Veitzer, Seth A.; Mahalingam, Sudhakar; Stoltz, Peter H.; Norem, J.

    2010-11-01

    Next-generation rf accelerating cavities will employ very high-gradient electric fields, greater than 100 MV/m, as well as strong magnetic fields. However, breakdown of accelerating structures due to high field gradients is a major limitation on these accelerating cavities. One possible mechanism for breakdown initiation is the rapid buildup of electrons due to field emission coupled with secondary electron emission. Multipacting may enhance this effect. In order to understand the physical processes of breakdown initiation and the effectiveness of potential mitigation techniques, researchers in the Muon Accelerator Program are experimenting with a simplified cavity, referred to as the Box Cavity, in which they will measure breakdown under high-gradient rf with strong externally applied magnetic fields with different orientations. We present here simulation results for the box cavity including the effects of rf (805 MHz), magnetic fields, field-dependent emission, secondary electron emission, and space charge, using the 3-Dimensional plasma simulation code VORPAL. We measure the effect of different magnetic field strengths and orientations on electron orbits and buildup. We also simulate the effects of field emission in different parts of the box cavity, such as from corners of the box near the rf coupler, and measure the effects on electron buildup over many rf periods. These detailed and self-consistent models will aid experimentalists to understand breakdown onset in high-gradient metallic accelerating cavities.

  3. A high voltage pulsed power supply for capillary discharge waveguide applications

    SciTech Connect

    Abuazoum, S.; Wiggins, S. M.; Issac, R. C.; Welsh, G. H.; Vieux, G.; Jaroszynski, D. A.; Ganciu, M.

    2011-06-15

    We present an all solid-state, high voltage pulsed power supply for inducing stable plasma formation (density {approx}10{sup 18} cm{sup -3}) in gas-filled capillary discharge waveguides. The pulser (pulse duration of 1 {mu}s) is based on transistor switching and wound transmission line transformer technology. For a capillary of length 40 mm and diameter 265 {mu}m and gas backing pressure of 100 mbar, a fast voltage pulse risetime of 95 ns initiates breakdown at 13 kV along the capillary. A peak current of {approx}280 A indicates near complete ionization, and the r.m.s. temporal jitter in the current pulse is only 4 ns. Temporally stable plasma formation is crucial for deploying capillary waveguides as plasma channels in laser-plasma interaction experiments, such as the laser wakefield accelerator.

  4. Increase in the scattering of electric field lines in a new high voltage SOI MESFET

    NASA Astrophysics Data System (ADS)

    Anvarifard, Mohammad K.

    2016-09-01

    This paper illustrates a new efficient technique to enhance the critical features of a silicon-on-insulator metal-semiconductor field-effect transistor (SOI MESFET) applied in high voltage applications. The structure we proposed utilizes a new method to scatter the electric field lines along the channel region. Realization of two trenches with different materials, which a trench is created in the channel region and the other one is created in the buried oxide, helps the proposed structure to improve the breakdown voltage, driving current, drain-source conductance, minimum noise figure, unilateral power gain and output power density. Exploring the obtained results, the proposed structure has superior electrical performance in comparison to the conventional structure.

  5. Reliability of High-Voltage Tantalum Capacitors. Parts 3 and 4)

    NASA Technical Reports Server (NTRS)

    Teverovsky, Alexander

    2010-01-01

    Weibull grading test is a powerful technique that allows selection and reliability rating of solid tantalum capacitors for military and space applications. However, inaccuracies in the existing method and non-adequate acceleration factors can result in significant, up to three orders of magnitude, errors in the calculated failure rate of capacitors. This paper analyzes deficiencies of the existing technique and recommends more accurate method of calculations. A physical model presenting failures of tantalum capacitors as time-dependent-dielectric-breakdown is used to determine voltage and temperature acceleration factors and select adequate Weibull grading test conditions. This model is verified by highly accelerated life testing (HALT) at different temperature and voltage conditions for three types of solid chip tantalum capacitors. It is shown that parameters of the model and acceleration factors can be calculated using a general log-linear relationship for the characteristic life with two stress levels.

  6. Living and Working Safely Around High-Voltage Power Lines.

    SciTech Connect

    United States. Bonneville Power Administration.

    2001-06-01

    High-voltage transmission lines can be just as safe as the electrical wiring in the homes--or just as dangerous. The crucial factor is ourselves: they must learn to behave safely around them. This booklet is a basic safety guide for those who live and work around power lines. It deals primarily with nuisance shocks due to induced voltages, and with potential electric shock hazards from contact with high-voltage lines. References on possible long-term biological effects of transmission lines are shown. In preparing this booklet, the Bonneville Power Administration has drawn on more than 50 years of experience with high-voltage transmission. BPA operates one of the world`s largest networks of long-distance, high-voltage lines. This system has more than 400 substations and about 15,000 miles of transmission lines, almost 4,400 miles of which are operated at 500,000 volts.

  7. Bipolar high-repetition-rate high-voltage nanosecond pulser

    SciTech Connect

    Tian Fuqiang; Wang Yi; Shi Hongsheng; Lei Qingquan

    2008-06-15

    The pulser designed is mainly used for producing corona plasma in waste water treatment system. Also its application in study of dielectric electrical properties will be discussed. The pulser consists of a variable dc power source for high-voltage supply, two graded capacitors for energy storage, and the rotating spark gap switch. The key part is the multielectrode rotating spark gap switch (MER-SGS), which can ensure wider range modulation of pulse repetition rate, longer pulse width, shorter pulse rise time, remarkable electrical field distortion, and greatly favors recovery of the gap insulation strength, insulation design, the life of the switch, etc. The voltage of the output pulses switched by the MER-SGS is in the order of 3-50 kV with pulse rise time of less than 10 ns and pulse repetition rate of 1-3 kHz. An energy of 1.25-125 J per pulse and an average power of up to 10-50 kW are attainable. The highest pulse repetition rate is determined by the driver motor revolution and the electrode number of MER-SGS. Even higher voltage and energy can be switched by adjusting the gas pressure or employing N{sub 2} as the insulation gas or enlarging the size of MER-SGS to guarantee enough insulation level.

  8. Planar LTCC transformers for high voltage flyback converters.

    SciTech Connect

    Schofield, Daryl; Schare, Joshua M.; Glass, Sarah Jill; Roesler, Alexander William; Ewsuk, Kevin Gregory; Slama, George; Abel, Dave

    2007-06-01

    This paper discusses the design and use of low-temperature (850 C to 950 C) co-fired ceramic (LTCC) planar magnetic flyback transformers for applications that require conversion of a low voltage to high voltage (> 100V) with significant volumetric constraints. Measured performance and modeling results for multiple designs showed that the LTCC flyback transformer design and construction imposes serious limitations on the achievable coupling and significantly impacts the transformer performance and output voltage. This paper discusses the impact of various design factors that can provide improved performance by increasing transformer coupling and output voltage. The experiments performed on prototype units demonstrated LTCC transformer designs capable of greater than 2 kV output. Finally, the work investigated the effect of the LTCC microstructure on transformer insulation. Although this paper focuses on generating voltages in the kV range, the experimental characterization and discussion presented in this work applies to designs requiring lower voltage.

  9. Optically triggered high voltage switch network and method for switching a high voltage

    DOEpatents

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  10. E-beam high voltage switching power supply

    DOEpatents

    Shimer, Daniel W.; Lange, Arnold C.

    1996-01-01

    A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  11. E-beam high voltage switching power supply

    DOEpatents

    Shimer, D.W.; Lange, A.C.

    1996-10-15

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

  12. COTS Li-Ion Cells in High Voltage Batteries

    NASA Technical Reports Server (NTRS)

    Davies, Francis; Darcy, Eric; Jeevarajan, Judy; Cowles, Phil

    2003-01-01

    Testing at NASA JSC and COMDEV shows that Commercial Off the Shelf (COTS) Li Ion cells can not be used in high voltage batteries safely without considering the voltage stresses that may be put on the protective devices in them during failure modes.

  13. Laser-induced breakdown spectroscopy with high detection sensitivity

    NASA Astrophysics Data System (ADS)

    Shen, X. K.; Ling, H.; Lu, Y. F.

    2009-02-01

    Laser-induced breakdown spectroscopy (LIBS) with spatial confinement and LIBS combined with laser-induced fluorescence (LIF) have been investigated to improve the detection sensitivity and selectivity of LIBS. An obvious enhancement in the emission intensity of Al atomic lines was observed when a cylindrical wall was placed to spatially confine the plasma plumes. The maximum enhancement factor for the emission intensity of Al atomic lines was measured to be around 10. Assuming local thermodynamic equilibrium conditions, the plasma temperatures are estimated to be in the range from 4000 to 5800 K. It shows that the plasma temperature increased by around 1000 K when the cylindrical confinement was applied. Fast imaging of the laser-induced Al plasmas shows that the plasmas were compressed into a smaller volume with a pipe presented. LIBS-LIF has been investigated to overcome the matrix effects in LIBS for the detection of trace uranium in solids. A wavelength-tunable laser with an optical parametric oscillator was used to resonantly excite the uranium atoms and ions within the plasma plumes generated by a Q-switched Nd:YAG laser. Both atomic and ionic lines can be selected to detect their fluorescence lines. A uranium concentration of 462 ppm in a glass sample can be detected using this technique at an excitation wavelength of 385.96 nm for resonant excitation of U II and a fluorescence line wavelength of 409.01 nm from U II. The mechanism of spatial confinement effects and the influence of relevant operational parameters of LIBS-LIF are discussed.

  14. Determination of threshold and maximum operating electric stresses for selected high voltage insulations. Task III. Investigation of high voltage capacitor insulation. Progress report No. 4

    SciTech Connect

    Sosnowski, M.; Eager, G.S. Jr.

    1984-03-01

    This report covers the investigation of threshold voltage of capacitor insulation. The experimental work was performed on samples prepared from commercial polypropylene insulated, liquid-filled capacitors. The samples were vacuum-impregnated with the original capacitor insulating liquid obtained from the manufacturer. A limited number of full-size capacitor elements also were tested. Impulse voltage breakdown tests with dc voltage prestressing were performed at room temperature and 75/sup 0/C. From the results of these tests, the threshold voltage of the samples of the capacitor insulation was determined at both temperatures and that of the whole capacitor elements at room temperature. The threshold voltage of the capacitor insulation was found to be approximately equal to the impulse breakdown voltage. No difference was found between the threshold voltage at room temperature and at 75/sup 0/C. The threshold voltage of the whole capacitor elements at room temperature was found to be equal to approximately 80% of the threshold voltage of the capacitor insulation samples.

  15. High voltage high repetition rate pulse using Marx topology

    NASA Astrophysics Data System (ADS)

    Hakki, A.; Kashapov, N.

    2015-06-01

    The paper describes Marx topology using MOSFET transistors. Marx circuit with 10 stages has been done, to obtain pulses about 5.5KV amplitude, and the width of the pulses was about 30μsec with a high repetition rate (PPS > 100), Vdc = 535VDC is the input voltage for supplying the Marx circuit. Two Ferrite ring core transformers were used to control the MOSFET transistors of the Marx circuit (the first transformer to control the charging MOSFET transistors, the second transformer to control the discharging MOSFET transistors).

  16. High-voltage pulsed generators for electro-discharge technologies

    NASA Astrophysics Data System (ADS)

    Kovalchuk, B. M.; Kharlov, A. V.; Kumpyak, E. V.; Sinebrykhov, V. A.

    2013-09-01

    A high-voltage pulse technology is one of effective techniques for the disintegration and milling of rocks, separation of ores and synthesized materials, recycling of building and elastoplastic materials. We present here the design and test results of two portable HV pulsed generators, designed for materials fragmentation, though some other technological applications are possible as well. Generator #1 consists of low voltage block, high voltage transformer, high voltage capacitive storage block, two electrode gas switch, fragmentation chamber and control system block. Technical characteristics of the #1 generator: stored energy in HV capacitors can be varied from 50 to 1000 J, output voltage up to 300 kV, voltage rise time ~ 50 ns, typical operation regime 1000 pulses bursts with a repetitive rate up to 10 Hz. Generator #2 is made on an eight stages Marx scheme with two capacitors (100 kV-400 nF) per stage, connected in parallel. Two electrode spark gap switches, operated in atmospheric air, are used in the Marx generator. Parameters of the generator: stored energy in capacitors 2÷8 kJ, amplitude of the output voltage 200÷400 kV, voltage rise time on a load 50÷100 ns, repetitive rate up to 0.5 Hz. The fragmentation process can be controlled within a wide range of parameters for both generators.

  17. System for instrumenting and manipulating apparatuses in high voltage

    DOEpatents

    Jordan, Kevin

    2016-06-07

    A system for energizing, operating and manipulating apparatuses in high voltage systems. The system uses a dielectric gas such as SF.sub.6 as a driving power supply for a pneumatic motor which ultimately charges a battery or other energy storage device. The stored energy can then be used for instrumentation equipment, or to power any electrical equipment, in the high voltage deck. The accompanying method provides for the use of the SF6 system for operating an electrical device in a high-voltage environment.

  18. High voltage bushing having weathershed and surrounding stress relief collar

    DOEpatents

    Cookson, Alan H.

    1981-01-01

    A high voltage electric bushing comprises a hollow elongated dielectric weathershed which encloses a high voltage conductor. A collar formed of high voltage dielectric material is positioned over the weathershed and is bonded thereto by an interface material which precludes moisture-like contaminants from entering between the bonded portions. The collar is substantially thicker than the adjacent weathershed which it surrounds, providing relief of the electric stresses which would otherwise appear on the outer surface of the weathershed. The collar may include a conductive ring or capacitive foil to further relieve electric stresses experienced by the bushing.

  19. Space Charge Formation and Electrical Breakdown at High Temperature Region in PVC for Electrical Wiring Assembly

    NASA Astrophysics Data System (ADS)

    Miura, Masakazu; Fukuma, Masumi; Kishida, Satoru

    The Polyvinyl chloride (PVC), the most popular insulating material, is used as an insulating material of various electric products. When using an electrical wiring assembly code over the power capacity, PVC could melt by the joule heating and cause an electrical breakdown. Therefore, it is necessary to clarify the electrical breakdown phenomena near the melting point (170°C) in PVC. In this paper, space charge distribution and conduction current have been measured in PVC sheets up to the electrical breakdown in the range from room temperature to 200°C under DC electric field. The breakdown strength decreases with temperature in PVC. Small hetero-space charges are accumulated near both of the electrodes at room temperature region. At high temperature region above 100°C, it is observed that positive charges are injected from anode and move toward the cathode; the electric field is emphasized near the cathode due to the packet-like positive charge in PVC. It shows a thermal breakdown process of the electric fields due to positive charge behavior and conduction current increase with temperature near the melting point in PVC.

  20. Thermal poling of alkaline earth boroaluminosilicate glasses with intrinsically high dielectric breakdown strength

    NASA Astrophysics Data System (ADS)

    Smith, Nicholas J.; Lanagan, Michael T.; Pantano, Carlo G.

    2012-04-01

    Per the rectification model of thermal poling, it has been proposed that intrinsic breakdown strength plays a strong limiting role in the internal DC fields supported by the glass from the poling process. One might therefore hypothesize proportionately larger second-order nonlinearity (SON) in glasses with intrinsically high dielectric breakdown strength. We test these ideas by thermal poling of two different commercial alkali-free alkaline-earth boroaluminosilicate display glasses—one with barium only (AF45 from Schott), and the other with a mixture of alkaline-earth ions (OA-10 G from NEG). Not only are such compositions relevant from a commercial standpoint, they are also interesting in that they have been recently shown to exhibit remarkably high intrinsic dielectric breakdown strengths of 11-14 MV/cm. Quantitative Maker fringe and stack Maker-fringe measurements provide an accurate evaluation of the poling-induced SON susceptibilities, and indicate maximum χ(2) values of 0.44 and 0.26 pm/V in these glasses. These values are comparable to those reported for silica and other multicomponent glasses. Thus, the hypothesis that higher χ(2) would be observed in high intrinsic breakdown strength glasses was not validated. Based on our application of the rectification model, internal fields of the order 2-4 MV/cm were calculated, which are well below the measured intrinsic breakdown strengths at room temperature. The most plausible explanation for these observations is nonlinear electronic conduction effects taking place within the depletion region at the poling temperature, limiting internal fields to a fraction of the breakdown field.

  1. Study of DC Circuit Breaker of H2-N2 Mixture Gas for High Voltage

    NASA Astrophysics Data System (ADS)

    Shiba, Yuji; Morishita, Yukinaga; Kaneko, Shuhei; Okabe, Shigemitsu; Mizoguchi, Hitoshi; Yanabu, Satoru

    Global warming caused by CO2 etc. is a field where the concern is very high. Especially, automobile emissions are problem for it. Therefore, the hybrid car is widely development and used recently. Hybrid car used electric power and gasoline. So, the car reduces CO2. Hybrid car has engine and motor. To rotate the motor, hybrid car has battery. This battery is large capacity. Therefore, the relay should interrupt high DC current for the switch of the motor and the engine. So, hybrid car used hydrogen gas filling relay We studied interruption test for the research of a basic characteristic of hydrogen gas. DC current has not current zero point. So, it is necessary to make the current zero by high arc voltage and forcible current zero point. The loss coefficient and arc voltage of hydrogen is high. Therefore, we studied interruption test for used high arc voltage. We studied interruption test and dielectric breakdown test of air, pure Hydrogen, and Hydrogen- nitrogen mixture gas. As a result, we realized H2-N2(80%-20%) is the best gas.

  2. Fast recovery, high voltage silicon diodes for AC motor controllers

    NASA Technical Reports Server (NTRS)

    Balodis, V.; Berman, A. H.; Gaugh, C.

    1982-01-01

    The fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.

  3. Multiple high voltage output DC-to-DC power converter

    NASA Technical Reports Server (NTRS)

    Cronin, Donald L. (Inventor); Farber, Bertrand F. (Inventor); Gehm, Hartmut K. (Inventor); Goldin, Daniel S. (Inventor)

    1977-01-01

    Disclosed is a multiple output DC-to-DC converter. The DC input power is filtered and passed through a chopper preregulator. The chopper output is then passed through a current source inverter controlled by a squarewave generator. The resultant AC is passed through the primary winding of a transformer, with high voltages induced in a plurality of secondary windings. The high voltage secondary outputs are each solid-state rectified for passage to individual output loads. Multiple feedback loops control the operation of the chopper preregulator, one being responsive to the current through the primary winding and another responsive to the DC voltage level at a selected output.

  4. Dynamics of laser-guided alternating current high voltage discharges

    NASA Astrophysics Data System (ADS)

    Daigle, J.-F.; Théberge, F.; Lassonde, P.; Kieffer, J.-C.; Fujii, T.; Fortin, J.; Châteauneuf, M.; Dubois, J.

    2013-10-01

    The dynamics of laser-guided alternating current high voltage discharges are characterized using a streak camera. Laser filaments were used to trigger and guide the discharges produced by a commercial Tesla coil. The streaking images revealed that the dynamics of the guided alternating current high voltage corona are different from that of a direct current source. The measured effective corona velocity and the absence of leader streamers confirmed that it evolves in a pure leader regime.

  5. Optical control system for high-voltage terminals

    DOEpatents

    Bicek, John J.

    1978-01-01

    An optical control system for the control of devices in the terminal of an electrostatic accelerator includes a laser that is modulated by a series of preselected codes produced by an encoder. A photodiode receiver is placed in the laser beam at the high-voltage terminal of an electrostatic accelerator. A decoder connected to the photodiode decodes the signals to provide control impulses for a plurality of devices at the high voltage of the terminal.

  6. A high-voltage supply used on miniaturized RLG

    NASA Astrophysics Data System (ADS)

    Miao, Zhifei; Fan, Mingming; Wang, Yuepeng; Yin, Yan; Wang, Dongmei

    2016-01-01

    A high voltage power supply used in laser gyro is proposed in this paper. The power supply which uses a single DC 15v input and fly-back topology is adopted in the main circuit. The output of the power supply achieve high to 3.3kv voltage in order to light the RLG. The PFM control method is adopted to realize the rapid switching between the high voltage state and the maintain state. The resonant chip L6565 is used to achieve the zero voltage switching(ZVS), so the consumption is reduced and the power efficiency is improved more than 80%. A special circuit is presented in the control portion to ensure symmetry of the two RLG's arms current. The measured current accuracy is higher than 5‰ and the current symmetry of the two RLG's arms up to 99.2%.

  7. A compact 100 kV high voltage glycol capacitor

    NASA Astrophysics Data System (ADS)

    Wang, Langning; Liu, Jinliang; Feng, Jiahuai

    2015-01-01

    A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

  8. Investigating the effective range of vacuum ultraviolet-mediated breakdown in high-power microwave metamaterials

    SciTech Connect

    Liu, Chien-Hao Neher, Joel D. Booske, John H. Behdad, Nader

    2014-10-14

    Metamaterials and periodic structures operating under high-power excitations are susceptible to breakdown. It was recently demonstrated that a localized breakdown created in a given region of a periodic structure can facilitate breakdown in other regions of the structure where the intensity of the incident electromagnetic fields may not be high enough to cause breakdown under normal circumstances. It was also demonstrated that this phenomenon is due to the generation of vacuum ultraviolet radiation at the location of the initial discharge, which propagates to the neighboring regions (e.g., other unit cells in a periodic structure) and facilitates the generation of a discharge at a lower incident power level. In this paper, we present the results of an experimental study conducted to determine the effective range of this physical phenomenon for periodic structures that operate in air and in pure nitrogen gas at atmospheric pressure levels. It is demonstrated that when breakdown is induced in a periodic structure using a high-power pulse with a frequency of 9.382 GHz, duration of 0.8 μs, and peak power level of 25 kW, this phenomenon is highly likely to happen in radii of approximately 16–17 mm from the location of the initial discharge under these test conditions. The results of this study are significant in designing metamaterials and periodic structures for high-power microwave applications as they suggest that a localized discharge created in such a periodic structure with a periodicity less than 16–17 mm can spread over a large surface and result in a distributed discharge.

  9. Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer

    PubMed Central

    2014-01-01

    Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO2/SiO2/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase the breakdown field of the devices. Meanwhile, the resistance of the dielectric after breakdown for device with stacking structure would be less than that of without stacking structure due to a higher breakdown field and larger breakdown power. In addition, the role of interfacial layer (IL) in the control of the interface trap density (Dit) and device reliability is also analyzed. Device with a thicker IL introduces a higher breakdown field and also a lower Dit. High-resolution transmission electron microscopy (HRTEM) of the samples with different IL thicknesses is provided to confirm that IL is needed for good interfacial property. PMID:25246869

  10. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    NASA Technical Reports Server (NTRS)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

  11. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    NASA Technical Reports Server (NTRS)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources - a nominal 300-Volt high voltage input bus and a nominal 28-Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power supplies that provide power to the thruster auxiliary supplies, and two parallel 7.5 kilowatt power supplies that are capable of providing up to 15 kilowatts of total power at 300-Volts to 500-Volts to the thruster discharge supply. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall Effect Thruster. The performance of unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate the exceptional performance with full power efficiencies exceeding 97. With a space-qualified silicon carbide or similar high voltage, high efficiency power device, this design could evolve into a flight design for future missions that require high power electric propulsion systems.

  12. High-voltage virtual-cathode microwave simulations

    SciTech Connect

    Thode, L.; Snell, C.M.

    1991-01-01

    In contrast to a conventional microwave tube, a virtual-cathode device operates above the space-charge limit where the depth of the space-charge potential is sufficiently large to cause electron reflection. The region associated with electron reflection is referred to as a virtual cathode. Microwaves can be generated through oscillations in the position of the virtual cathode and by reflexing electrons trapped in the potential well formed between the real and virtual cathodes. A virtual-cathode device based on the first mechanism is a vircator while one based on latter mechanism is a reflex diode. A large number of low-voltage virtual-cathode microwave configurations have been investigated. Initial simulations of a high-voltage virtual-cathode device using a self-consistent particle-in-cell code indicated reasonable conversion efficiency with no frequency chirping. The nonchirping character of the high-voltage virtual-cathode device lead to the interesting possibility of locking four very-high-power microwave devices together using the four transmission lines available at Aurora. Subsequently, in support of two high-voltage experiments, simulations were used to investigate the effect of field-emission threshold and velvet position on the cathode; anode and cathode shape; anode-cathode gap spacing; output waveguide radius; diode voltage; a cathode-coaxial-cavity resonator; a high-frequency ac-voltage drive; anode foil scattering and energy loss; and ion emission on the microwave frequency and power. Microwave

  13. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls...

  14. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls...

  15. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls...

  16. High performance dc-dc conversion with voltage multipliers

    NASA Technical Reports Server (NTRS)

    Harrigill, W. T.; Myers, I. T.

    1974-01-01

    The voltage multipliers using capacitors and diodes first developed by Cockcroft and Walton in 1932 were reexamined in terms of state of the art fast switching transistors and diodes, and high energy density capacitors. Because of component improvements, the voltage multiplier, used without a transformer, now appears superior in weight to systems now in use for dc-dc conversion. An experimental 100-watt 1000-volt dc-dc converter operating at 100 kHz was built, with a component weight of about 1 kg/kW. Calculated and measured values of output voltage and efficiency agreed within experimental error.

  17. DC Breakdown Experiments

    SciTech Connect

    Calatroni, S.; Descoeudres, A.; Levinsen, Y.; Taborelli, M.; Wuensch, W.

    2009-01-22

    In the context of the CLIC (Compact Linear Collider) project investigations of DC breakdown in ultra high vacuum are carried out in parallel with high power RF tests. From the point of view of saturation breakdown field the best material tested so far is stainless steel, followed by titanium. Copper shows a four times weaker breakdown field than stainless steel. The results indicate clearly that the breakdown events are initiated by field emission current and that the breakdown field is limited by the cathode. In analogy to RF, the breakdown probability has been measured in DC and the data show similar behaviour as a function of electric field.

  18. Nickel-gallium arsenide high-voltage power Schottky diodes

    NASA Astrophysics Data System (ADS)

    Ashkinazi, G.; Hadas, Tz.; Meyler, B.; Nathan, M.; Zolotarevski, L.; Zolotarevski, O.

    1993-01-01

    A power GaAs Schottky diode (SD) with a chemically deposited Ni barrier was designed, fabricated and tested. The diode has a reverse breakdown voltage VBR of 140 V, forward voltage drop VF (at 50 A/cm 2) of 0.7 V at 23°C, 0.5 V at 150°C and 0.3 V at 250°C, and reverse leakage current densities jR (at -50 V) of 0.1 μA/cm 2 at 23°C and 1 mA/cm 2 at 150°C. Calculated forward and reverse I- V characteristics using a simple self-consistent computer model are in good agreement with measured values. Calculated characteristics of a silicon SD with identical structure parameters, using the same model, show much poorer VBR, VF and jR values. The theoretical maximum value of VBR is physically limited by the largest allowed VF. For a V Fof ⋍1.6 V, V BR.maxis ⋍200 V in Si and ⋍800 simple technology allows manufacturing of large area GaAs Schottky diodes with average currents up to V in GaAs SDs. Our relatively 100 A.

  19. Pulsed high-voltage dielectric properties of ethylene glycol/water mixtures

    NASA Astrophysics Data System (ADS)

    Fenneman, David B.

    1982-12-01

    Measurements of the (complex) dielectric constant, intrinsic time constant, and electrical breakdown strength of highly purified ethylene glycol/water mixtures as functions of temperature and mixture ratio are presented. Over the frequency range from 0.5 to 108 MHz, the dielectric constant is found to be well represented by a simple Debye model. When cooled to near their freezing points, these mixtures have dielectric constants of the same order as pure water (˜80) but with intrinsic time constants at least an order of magnitude greater than water. The mixtures are found to support fields greater than 15 MV/m for periods exceeding a millisecond. The observed high-voltage decay is nonsimple due to the phenomenon of charge injection. The ability to sustain high fields for millisecond time scales suggests the use of such mixtures as the dielectric in the pulse forming lines of large-pulse power machines.

  20. High voltage electrical amplifier having a short rise time

    DOEpatents

    Christie, David J.; Dallum, Gregory E.

    1991-01-01

    A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

  1. Planar LTCC transformers for high voltage flyback converters: Part II.

    SciTech Connect

    Schofield, Daryl; Schare, Joshua M., Ph.D.; Slama, George; Abel, David

    2009-02-01

    This paper is a continuation of the work presented in SAND2007-2591 'Planar LTCC Transformers for High Voltage Flyback Converters'. The designs in that SAND report were all based on a ferrite tape/dielectric paste system originally developed by NASCENTechnoloy, Inc, who collaborated in the design and manufacturing of the planar LTCC flyback converters. The output/volume requirements were targeted to DoD application for hard target/mini fuzing at around 1500 V for reasonable primary peak currents. High voltages could be obtained but with considerable higher current. Work had begun on higher voltage systems and is where this report begins. Limits in material properties and processing capabilities show that the state-of-the-art has limited our practical output voltage from such a small part volume. In other words, the technology is currently limited within the allowable funding and interest.

  2. Design & Fabrication of a High-Voltage Photovoltaic Cell

    SciTech Connect

    Felder, Jennifer; /North Carolina State U. /SLAC

    2012-09-05

    Silicon photovoltaic (PV) cells are alternative energy sources that are important in sustainable power generation. Currently, applications of PV cells are limited by the low output voltage and somewhat low efficiency of such devices. In light of this fact, this project investigates the possibility of fabricating high-voltage PV cells on float-zone silicon wafers having output voltages ranging from 50 V to 2000 V. Three designs with different geometries of diffusion layers were simulated and compared in terms of metal coverage, recombination, built-in potential, and conduction current density. One design was then chosen and optimized to be implemented in the final device design. The results of the simulation serve as a feasibility test for the design concept and provide supportive evidence of the effectiveness of silicon PV cells as high-voltage power supplies.

  3. Pre-breakdown evaluation of gas discharge mechanisms in microgaps

    SciTech Connect

    Semnani, Abbas; Peroulis, Dimitrios; Venkattraman, Ayyaswamy; Alexeenko, Alina A.

    2013-04-29

    The individual contributions of various gas discharge mechanisms to total pre-breakdown current in microgaps are quantified numerically. The variation of contributions of field emission and secondary electron emission with increasing electric field shows contrasting behavior even for a given gap size. The total current near breakdown decreases rapidly with gap size indicating that microscale discharges operate in a high-current, low-voltage regime. This study provides the first such analysis of breakdown mechanisms and aids in the formulation of physics-based theories for microscale breakdown.

  4. Dielectric breakdown in a dilute plasma: A 20 kilovolt limited study

    NASA Technical Reports Server (NTRS)

    Mckinzie, D. J., Jr.; Grier, N. T.

    1972-01-01

    A dielectric breakdown study was made of several materials proposed for high-voltage (16-kV) use on solar-cell arrays at space conditions. The tests were made in an argon plasma whose electron density and temperature approximately simulated conditions at an altitude of 300 km. The maximum voltage used was 20 kV. The results indicate that the breakdown voltages of the materials tested are larger than those quoted in the literature for dielectric between two metal electrodes.

  5. Surface effects in high voltage silicon solar cells

    NASA Technical Reports Server (NTRS)

    Meulenberg, A.; Arndt, R. A.

    1982-01-01

    The surface of low-resistivity silicon solar cells appears to be a major source of dark diffusion current. This region, consisting of the interface and the adjacent heavily doped layer, therefore, prevents attainment of the high open-circuit voltages expected from these cells. This paper describes the experimental effort carried out to reduce the various contributions of dark current from the surface. Analysis of results from this effort points to means of improving cell voltages by changing processing and structures.

  6. High voltage series connected tandem junction solar battery

    DOEpatents

    Hanak, Joseph J.

    1982-01-01

    A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

  7. Electrical breakdown studies with Mycalex insulators

    SciTech Connect

    Waldron, W.; Greenway, W.; Eylon, S.; Henestroza, E.; Yu, S.

    2003-05-01

    Insulating materials such as alumina and glass-bonded mica (Mycalex) are used in accelerator systems for high voltage feedthroughs, structural supports, and barriers between high voltage insulating oil and the vacuum beam pipe in induction accelerator cells. Electric fields in the triple points should be minimized to prevent voltage breakdown. Mechanical stress can compromise seals and result in oil contamination of the insulator surface. We have tested various insulator cleaning procedures including ultrasonic cleaning with a variety of aqueous-based detergents, and manual scrubbing with various detergents. Water sheeting tests were used to determine the initial results of the cleaning methods. Ultimately, voltage breakdown tests will be used to quantify the benefits of these cleaning procedures.

  8. Repeated Strike Process During Disconnector Operation in Ultra-High Voltage Gas-Insulated Switchgear

    NASA Astrophysics Data System (ADS)

    Guan, Yonggang; Cai, Yuanji; Chen, Weijiang; Liu, Weidong; Li, Zhibing; Yue, Gongchang; Zhang, Junmin

    2016-03-01

    Very fast transient over-voltage (VFTO), induced by disconnector operations in gas-insulated switchgears, has become the limiting dielectric stress at ultra-high voltage levels. Much work has been done to investigate single-strike waveforms of VFTO. However, little study has been carried out investigating the repeated strike process, which would influence VFTO significantly. In this paper, we carried out 450 effective experiments in an ultra-high voltage test circuit, and conducted calculations through the Monte Carlo simulation method, to investigate the repeated strike process. Firstly, the mechanism of the repeated strike process is proposed, based on the experimental results. Afterwards, statistical breakdown characteristics of disconnectors are obtained and analyzed. Finally, simulations of the repeated strike process are conducted, which indicate that the dielectric strength recovery speed and polarity effect factor have a joint effect on VFTO. This study enhances the understanding of the nature of VFTO, and may help to optimize the disconnector designed to minimize VFTO. supported in part by National Natural Science Foundation of China (No. 51277106) and in part by the National Basic Research Program of China (973 Program) (No. 2011CB209405)

  9. High voltage switch triggered by a laser-photocathode subsystem

    DOEpatents

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  10. Understanding the self-healing hydrophobic recovery of high-voltage insulators.

    PubMed

    Shemella, Philip T; Laino, Teodoro; Fritz, Oliver; Curioni, Alessandro

    2012-06-21

    Amorphous siloxane polymers are designed to have high dielectric strength for use as high-voltage insulation materials. Surface hydrophobicity is essential and can be impaired by environmental, electrical, or mechanical factors, leading to leakage currents due to dielectric breakdown. Self-recovery is possible and is generally observed over a period of several hours. Using large-scale, all-atom molecular dynamics simulations, the surface wetting of water droplets on the polymer surface is simulated for various surface conditions, including oxidation and coating with small molecules, to understand the driving forces of the recovery process at the atomistic level, which is of primary importance for the developments of novel materials. In this work, we shed light onto the self-recovery mechanism and propose the use of low-molecular-weight (LMW) siloxane to accelerate the recovery of hydrophobicity. PMID:22624664

  11. Investigation of high voltage spacecraft system interactions with plasma environments

    NASA Technical Reports Server (NTRS)

    Stevens, N. J.; Berkopec, F. D.; Purvis, C. K.; Grier, N.; Staskus, J.

    1978-01-01

    The exposure of high voltage spacecraft systems to the charged particle environment of space can produce interactions that will influence system operation. An experimental investigation of these interactions has been undertaken for insulator and conductor test surfaces biased up to plus or minus 1 kV in a simulated low earth orbit charged particle environment. It has been found that these interactions are controlled by the insulator surfaces surrounding the biased conductors. For positive applied voltages the electron current collection can be enhanced by the insulators. For negative applied voltages the insulator surface confines the voltage to the conductor region; this can cause arcing. Understanding these interactions and the technology to control their impact on system operation is essential to the design of solar cell arrays for ion drive propulsion applications that use direct drive power processing.

  12. High-Capacity, High-Voltage Composite Oxide Cathode Materials

    NASA Technical Reports Server (NTRS)

    Hagh, Nader M.

    2015-01-01

    This SBIR project integrates theoretical and experimental work to enable a new generation of high-capacity, high-voltage cathode materials that will lead to high-performance, robust energy storage systems. At low operating temperatures, commercially available electrode materials for lithium-ion (Li-ion) batteries do not meet energy and power requirements for NASA's planned exploration activities. NEI Corporation, in partnership with the University of California, San Diego, has developed layered composite cathode materials that increase power and energy densities at temperatures as low as 0 degC and considerably reduce the overall volume and weight of battery packs. In Phase I of the project, through innovations in the structure and morphology of composite electrode particles, the partners successfully demonstrated an energy density exceeding 1,000 Wh/kg at 4 V at room temperature. In Phase II, the team enhanced the kinetics of Li-ion transport and electronic conductivity at 0 degC. An important feature of the composite cathode is that it has at least two components that are structurally integrated. The layered material is electrochemically inactive; however, upon structural integration with a spinel material, the layered material can be electrochemically activated and deliver a large amount of energy with stable cycling.

  13. Gaseous insulators for high voltage electrical equipment

    DOEpatents

    Christophorou, Loucas G.; James, David R.; Pace, Marshall O.; Pai, Robert Y.

    1979-01-01

    Gaseous insulators comprise compounds having high attachment cross sections for electrons having energies in the 0-1.3 electron volt range. Multi-component gaseous insulators comprise compounds and mixtures having overall high electron attachment cross sections in the 0-1.3 electron volt range and moderating gases having high cross sections for inelastic interactions with electrons of energies 1-4 electron volts. Suitable electron attachment components include hexafluorobutyne, perfluorobutene-2, perfluorocyclobutane, perfluorodimethylcyclobutane, perfluorocyclohexene, perfluoromethylcyclohexane, hexafluorobutadiene, perfluoroheptene-1 and hexafluoroazomethane. Suitable moderating gases include N.sub.2, CO, CO.sub.2 and H.sub.2. The gaseous insulating mixture can also contain SF.sub.6, perfluoropropane and perfluorobenzene.

  14. Gaseous insulators for high voltage electrical equipment

    DOEpatents

    Christophorou, Loucas G.; James, David R.; Pace, Marshall O.; Pai, Robert Y.

    1981-01-01

    Gaseous insulators comprise compounds having high attachment cross sections for electrons having energies in the 0-1.3 electron volt range. Multi-component gaseous insulators comprise compounds and mixtures having overall high electron attachment cross sections in the 0-1.3 electron volt range and moderating gases having high cross sections for inelastic interactions with electrons of energies 1-4 electron volts. Suitable electron attachment components include hexafluorobutyne, perfluorobutene-2, perfluorocyclobutane, perfluorodimethylcyclobutane, perfluorocyclohexene, perfluoromethylcyclohexane, hexafluorobutadiene, perfluoroheptene-1 and hexafluoroazomethane. Suitable moderating gases include N.sub.2, CO, CO.sub.2 and H.sub.2. The gaseous insulating mixture can also contain SF.sub.6, perfluoropropane and perfluorobenzene.

  15. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  16. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  17. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  18. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  19. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  20. A high voltage nanosecond pulser with independently adjustable output voltage, pulse width, and pulse repetition frequency

    NASA Astrophysics Data System (ADS)

    Prager, James; Ziemba, Timothy; Miller, Kenneth; Carscadden, John; Slobodov, Ilia

    2014-10-01

    Eagle Harbor Technologies (EHT) is developing a high voltage nanosecond pulser capable of generating microwaves and non-equilibrium plasmas for plasma medicine, material science, enhanced combustion, drag reduction, and other research applications. The EHT nanosecond pulser technology is capable of producing high voltage (up to 60 kV) pulses (width 20-500 ns) with fast rise times (<10 ns) at high pulse repetition frequency (adjustable up to 100 kHz) for CW operation. The pulser does not require the use of saturable core magnetics, which allows for the output voltage, pulse width, and pulse repetition frequency to be fully adjustable, enabling researchers to explore non-equilibrium plasmas over a wide range of parameters. A magnetic compression stage can be added to improve the rise time and drive lower impedance loads without sacrificing high pulse repetition frequency operation. Work supported in part by the US Navy under Contract Number N00014-14-P-1055 and the US Air Force under Contract Number FA9550-14-C-0006.

  1. Arcing on High Voltage Solar Arrays in Low Earth Orbit: Theory and Computer Particle Simulation.

    NASA Astrophysics Data System (ADS)

    Cho, Meng'u.

    1992-01-01

    The operation of high voltage solar arrays in low earth orbit causes serious environmental interactions with the surrounding space plasma. Arcing on the negatively biased part of the solar array sets a practical limit on the operational voltage of the solar array. It has been proposed that arcing occurs due to collisional ionization of the neutral cloud desorbed from the dielectric coverglass and adhesive surfaces by the prebreakdown electron current emitted from the interconnector surface. The charging processes of the dielectric material in a solar cell by charged particles are studied numerically. If there is a field emission site with a high electric field enhancement factor beta on the conductor, charging processes due to enhanced field electron emission (EFEE) can be initiated and lead to desorption of neutral gas from the dielectric surface, creating a semi-vacuum neutral environment where pd is on the vacuum side of the Paschen minimum. Gas breakdown phenomena occurring in the semi -vacuum environment are studied analytically as well as numerically using a Monte Carlo-Particle in Cell (MC-PIC) code in a simplified one-dimensional system. The MC-PIC code is shown to be an efficient way to reproduce real physical phenomena with quantitative accuracy. The breakdown of a gas in semi-vacuum conditions is attributed to the field enhancement by positive ion space charges resulting in higher enhanced field electron emission from the cathode surface. The analytical expression for the breakdown condition is derived, and very good agreement with the numerical results and the published experimental data is obtained. The MC-PIC code is applied to a two-dimensional system which simulates the geometry of a conventional solar cell to determine the critical condition for the arcing onset. The neutral desorption from the dielectric surface is also calculated self-consistently by a Direct Simulation Monte Carlo (DSMC) code. The computer simulation clearly shows the arcing

  2. E-beam high voltage switching power supply

    DOEpatents

    Shimer, Daniel W.; Lange, Arnold C.

    1997-01-01

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

  3. E-beam high voltage switching power supply

    DOEpatents

    Shimer, D.W.; Lange, A.C.

    1997-03-11

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360{degree}/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs.

  4. Current contacts and the breakdown of the quantum Hall effect

    NASA Astrophysics Data System (ADS)

    van Son, P. C.; Kruithof, G. H.; Klapwijk, T. M.

    1990-12-01

    The nonlinearities in the I-V characteristics have been studied of high-mobility Si metal oxide semiconductor field-effect transistors in the quantum Hall regime. The breakdown curves were measured with different sets of voltage contacts and for different directions of magnetic field and current. Comparison of these curves shows that the breakdown of the quantum Hall effect (QHE) in these samples is an intrinsic effect that starts at the current contact where the electrons are injected into the two-dimensional electron gas (2DEG). This fundamental asymmetry and the crucial role of the current contact are explained using the Büttiker-Landauer approach to the QHE and its recent extension to the nonlinear regime. The electron-injection process contains two mechanisms that lead to breakdown voltages in the 2DEG. We have identified both experimentally by comparing the critical currents of different configurations of current and voltage contacts. In one of the mechanisms, the nonequilibrium distribution of electrons that is injected into the 2DEG extends to the voltage contacts. This means that the equilibration length of the 2D electrons is at least of the order of 100 μm. For currents far beyond breakdown and for voltage contacts that are further from the electron-injection contact, the breakdown characteristics are harder to understand. The variation of the electron density of the 2DEG due to the large Hall voltage has to be taken into account as well as the equilibration induced by additional voltage contacts.

  5. High-voltage pulsed generator for dynamic fragmentation of rocks

    NASA Astrophysics Data System (ADS)

    Kovalchuk, B. M.; Kharlov, A. V.; Vizir, V. A.; Kumpyak, V. V.; Zorin, V. B.; Kiselev, V. N.

    2010-10-01

    A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ˜50 ns, current amplitude of ˜6 kA with the 40 Ω active load, and ˜20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

  6. High voltage stability performance of a gamma ray detection device

    SciTech Connect

    Abdullah, Nor Arymaswati; Lombigit, Lojius; Rahman, Nur Aira Abd

    2014-02-12

    An industrial grade digital radiation survey meter device is currently being developed at Malaysian Nuclear Agency. This device used a cylindrical type Geiger Mueller (GM) which acts as a detector. GM detector operates at relatively high direct current voltages depend on the type of GM tube. This thin/thick walled cylindrical type of GM tube operates at 450-650 volts range. Proper value and stability performance of high voltage are important parameters to ensure that this device give a reliable radiation dose measurement. This paper will present an assessment of the stability and performance of the high voltage supply for radiation detector. The assessment is performed using System Identification tools box in MATLAB and mathematical statistics.

  7. High voltage electron microscopy of lunar samples

    NASA Technical Reports Server (NTRS)

    Fernandez-Moran, H.

    1973-01-01

    Lunar pyroxenes from Apollo 11, 12, 14, and 15 were investigated. The iron-rich and magnesium-rich pyroxene specimens were crushed to a grain size of ca. 50 microns and studied by a combination of X-ray and electron diffraction, electron microscopy, 57 Fe Mossbauer spectroscopy and X-ray crystallography techniques. Highly ordered, uniform electron-dense bands, corresponding to exsolution lamellae, with average widths of ca. 230A to 1000A dependent on the source specimen were observed. These were?qr separated by wider, less-dense interband spacings with average widths of ca. 330A to 3100A. In heating experiments, splitting of the dense bands into finer structures, leading finally to obliteration of the exsolution lamellae was recorded. The extensive exsolution is evidence for significantly slower cooling rates, or possibly annealing, at temperatures in the subsolidus range, adding evidence that annealing of rock from the surface of the moon took place at ca. 600 C. Correlation of the band structure with magnetic ordering at low temperatures and iron clustering within the bands was studied.

  8. Cleaning High-Voltage Equipment With Corncob Grit

    NASA Technical Reports Server (NTRS)

    Caveness, C.

    1986-01-01

    High electrical resistance of particles makes power shutdown unnecessary. New, inexpensive method of cleaning high-voltage electrical equipment uses plentiful agricultural product - corncob grit. Method removes dirt and debris from transformers, circuit breakers, and similar equipment. Suitable for utilities, large utility customers, and electrical-maintenance services.

  9. Initiation of vacuum insulator surface high-voltage flashover with electrons produced by laser illumination

    SciTech Connect

    Krasik, Ya. E.; Leopold, J. G.

    2015-08-15

    In this paper, experiments are described in which cylindrical vacuum insulator samples and samples inclined at 45° relative to the cathode were stressed by microsecond timescale high-voltage pulses and illuminated by focused UV laser beam pulses. In these experiments, we were able to distinguish between flashover initiated by the laser producing only photo-electrons and when plasma is formed. It was shown that flashover is predominantly initiated near the cathode triple junction. Even dense plasma formed near the anode triple junction does not necessarily lead to vacuum surface flashover. The experimental results directly confirm our conjecture that insulator surface breakdown can be avoided by preventing its initiation [J. G. Leopold et al., Phys. Rev. ST Accel. Beams 10, 060401 (2007)] and complement our previous experimental results [J. Z. Gleizer et al., IEEE Trans. Dielectr. Electr. Insul. 21, 2394 (2014) and J. Z. Gleizer et al., J. Appl. Phys. 117, 073301 (2015)].

  10. Initiation of vacuum insulator surface high-voltage flashover with electrons produced by laser illumination

    NASA Astrophysics Data System (ADS)

    Krasik, Ya. E.; Leopold, J. G.

    2015-08-01

    In this paper, experiments are described in which cylindrical vacuum insulator samples and samples inclined at 45° relative to the cathode were stressed by microsecond timescale high-voltage pulses and illuminated by focused UV laser beam pulses. In these experiments, we were able to distinguish between flashover initiated by the laser producing only photo-electrons and when plasma is formed. It was shown that flashover is predominantly initiated near the cathode triple junction. Even dense plasma formed near the anode triple junction does not necessarily lead to vacuum surface flashover. The experimental results directly confirm our conjecture that insulator surface breakdown can be avoided by preventing its initiation [J. G. Leopold et al., Phys. Rev. ST Accel. Beams 10, 060401 (2007)] and complement our previous experimental results [J. Z. Gleizer et al., IEEE Trans. Dielectr. Electr. Insul. 21, 2394 (2014) and J. Z. Gleizer et al., J. Appl. Phys. 117, 073301 (2015)].

  11. Direct experimental determination of voltage across high-low junctions

    NASA Technical Reports Server (NTRS)

    Daud, T.; Lindholm, F. A.

    1986-01-01

    High-low (HL) junctions form a part of many semiconductor devices, including back surface field solar cells. A first experimental determination and interpretation of the voltage across the HL junction under low- and high-injection conditions is presented as a function of the voltage across a nearby p/n junction. Theoretical analysis from first principles is shown to bear well on the experimental results. In addition, a test structure is proposed for measurement of the effective surface recombination velocity at the HL junctions.

  12. Multichannels high voltage programmable driver for piezoelectric transducer.

    PubMed

    Flaxer, Eli

    2008-03-01

    A complete design of a compact, high voltage, multichannel programmable waveform generator, using an 8 bit microcontroller, 12 bit digital to analog converter, and high voltage operation amplifier, is presented. The user can generate the waveform by several options: classic waveform, calculator, freehand drawing, and using excel or text file. All the waveform data are stored in a nonvolatile memory of the microcontroller. The generator can work as a stand-alone instrument or conjoined with a personal computer. We used this generator as a controller for piezoelectric inertial slider. PMID:18377042

  13. Multichannels high voltage programmable driver for piezoelectric transducer

    NASA Astrophysics Data System (ADS)

    Flaxer, Eli

    2008-03-01

    A complete design of a compact, high voltage, multichannel programmable waveform generator, using an 8bit microcontroller, 12bit digital to analog converter, and high voltage operation amplifier, is presented. The user can generate the waveform by several options: classic waveform, calculator, freehand drawing, and using excel or text file. All the waveform data are stored in a nonvolatile memory of the microcontroller. The generator can work as a stand-alone instrument or conjoined with a personal computer. We used this generator as a controller for piezoelectric inertial slider.

  14. Predicted and actual high voltage failure - A case history

    NASA Astrophysics Data System (ADS)

    Fowler, P. H.; Brent, D. A.; Sidio, G. J.

    In the process of re-developing a high voltage transformer for space use, excellent correlation was found between predicted mechanical failure, predicted partial discharge signature, and real behavior of the parts. Some useful design and inspection criteria for potted high voltage parts were developed on a consistent basis. It was found that partial discharge testing as normally implemented will not necessarily discern all life limiting defects. Three lines of investigation were followed: material properties and stress analysis, prediction of partial discharge signature as a function of defect size, and computer field stress analysis to predict which defects are capable of discharge.

  15. High-Voltage, Low-Power BNC Feedthrough Terminator

    NASA Technical Reports Server (NTRS)

    Bearden, Douglas

    2012-01-01

    This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

  16. Fast thermonuclear ignition with two nested high current lower voltage - high voltage lower current magnetically insulated transmission lines

    NASA Astrophysics Data System (ADS)

    Winterberg, F.

    2003-11-01

    Fast thermonuclear ignition with a high gain seems possible with two Marx generators feeding two nested magnetically insulated transmission lines, one delivering a high current lower voltage pulse for compression and confinement, and one delivering a high voltage lower current pulse for fast ignition. With an input energy conceivably as small as 100 kJ the gain can be as large as 10 3. The concept not only would be by orders of magnitude less expensive than laser compression and fast ignition schemes, but because of the large gain with a small yield also be more suitable for a thermonuclear reactor.

  17. Development and Breakdown of Goertler Vortices in High Speed Boundary Layers

    NASA Technical Reports Server (NTRS)

    Li, Fei; Choudhari, Meelan; Chang, Chau-Lyan; Wu, Minwei; Greene, Ptrick T.

    2010-01-01

    The nonlinear development of G rtler instability over a concave surface gives rise to a highly distorted stationary flow in the boundary layer that has strong velocity gradients in both spanwise and wall-normal directions. This distorted flow is susceptible to strong, high frequency secondary instability that leads to the onset of transition. For high Mach number flows, the boundary layer is also subject to the second mode instability. The nonlinear development of G rtler vortices and the ensuing growth and breakdown of secondary instability, the G rtler vortex interactions with second mode instabilities as well as oblique second mode interactions are examined in the context of both internal and external hypersonic configurations using nonlinear parabolized stability equations, 2-D eigenvalue analysis and direct numerical simulation. For G rtler vortex development inside the Purdue Mach 6 Ludwieg tube wind tunnel, multiple families of unstable secondary eigenmodes are identified and their linear and nonlinear evolution is examined. The computation of secondary instability is continued past the onset of transition to elucidate the physical mechanisms underlying the laminar breakdown process. Nonlinear breakdown scenarios associated with transition over a Mach 6 compression cone configuration are also explored.

  18. Ultra High Voltage Propellant Isolators and Insulators for JIMO Ion Thrusters

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Gaier, James R.; Hung, Ching-Cheh; Walters, Patty A.; Sechkar, Ed; Panko, Scott; Kamiotis, Christina A.

    2004-01-01

    Within NASA's Project Prometheus, high specific impulse ion thrusters for electric propulsion of spacecraft for the proposed Jupiter Icy Moon Orbiter (JIMO) mission to three of Jupiter's moons: Callisto, Ganymede and Europa will require high voltage operation to meet mission propulsion. The anticipated approx.6,500 volt net ion energy will require electrical insulation and propellant isolation which must exceed that used successfully by the NASA Solar Electric Propulsion Technology Readiness (NSTAR) Deep Space 1 mission thruster by a factor of approx.6. Xenon propellant isolator prototypes that operate at near one atmosphere and prototypes that operate at low pressures (<100 Torr) have been designed and are being tested for suitability to the JIMO mission requirements. Propellant isolators must be durable to Paschen breakdown, sputter contamination, high temperature, and high voltage while operating for factors longer duration than for the Deep Space 1 Mission. Insulators used to mount the thrusters as well as those needed to support the ion optics have also been designed and are under evaluation. Isolator and insulator concepts, design issues, design guidelines, fabrication considerations and performance issues are presented. The objective of the investigation was to identify candidate isolators and insulators that are sufficiently robust to perform durably and reliably during the proposed JIMO mission.

  19. Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stress

    NASA Astrophysics Data System (ADS)

    Raghavan, Nagarajan; Padovani, Andrea; Li, Xiang; Wu, Xing; Lip Lo, Vui; Bosman, Michel; Larcher, Luca; Leong Pey, Kin

    2013-09-01

    Localized progressive wear-out and degradation of ultra-thin dielectrics around the oxygen vacancy percolation path formed during accelerated time dependent dielectric breakdown tests is a well-known phenomenon documented for silicon oxynitride (SiON) based gate stacks in metal oxide semiconductor field effect transistors. This progressive or post breakdown stage involves an initial phase characterized by "digital" random telegraph noise fluctuations followed by the wear-out of the percolation path, which results in an "analog" increase in the leakage current, culminating in a thermal runaway and hard breakdown. The relative contribution of the digital and analog phases of degradation at very low voltage stress in ultra-thin SiON (16 Å´) is yet to be fully investigated, which represents the core of this study. We investigate the wear-out process by combining electrical and physical analysis evidences with modeling and simulation results using Kinetic Monte Carlo defect generation and multi-phonon trap assisted tunneling (PTAT) models. We show that the transition from the digital to the analog regime is governed by a critical voltage (VCRIT), which determines the reliability margin in the post breakdown phase. Our results have a significant impact on the post-breakdown operational reliability of SiON and advanced high-κ-SiOx interfacial layer gate stacks, wherein the SiOx layer seems to be the weakest link for percolation event.

  20. Ultra-High Voltage 4H-SiC Bi-Directional Insulated Gate Bipolar Transistors

    NASA Astrophysics Data System (ADS)

    Chowdhury, Sauvik

    4H- Silicon Carbide (4H-SiC) is an attractive material for power semiconductor devices due to its large bandgap, high critical electric field and high thermal conductivity compared to Silicon (Si). For ultra-high voltage applications (BV > 10 kV), 4H-SiC Insulated Gate Bipolar Transistors (IGBTs) are favored over unipolar transistors due to lower conduction losses. With improvements in SiC materials and processing technology, promising results have been demonstrated in the area of conventional unidirectional 4H-SiC IGBTs, with breakdown voltage ratings up to 27 kV. This research presents the experimental demonstration of the world's first high voltage bi-directional power transistors in 4H-SiC. Traditionally, four (two IGBTs and two diodes) or two (two reverse blocking IGBTs) semiconductor devices are necessary to yield a bidirectional switch. With a monolithically integrated bidirectional switch as presented here, the number of semiconductor devices is reduced to only one, which results in increased reliability and reduced cost of the overall system. Additionally, by using the unique dual gate operation of BD-IGBTs, switching losses can be reduced to a small fraction of that in conventional IGBTs, resulting in increased efficiency. First, the performance limits of SiC IGBTs are calculated by using analytical methods. The performance benefits of SiC IGBTs over SiC unipolar devices and Si IGBTs are quantified. Numerical simulations are used to optimize the unit cell and edge termination structures for a 15 kV SiC BD-IGBT. The effect of different device parameters on BD-IGBT static and switching performance are quantified. Second, the process technology necessary for the fabrication of high voltage SiC BD-IGBTs is optimized. The effect of different process steps on parameters such as breakdown voltage, carrier lifetime, gate oxide reliability, SiO2-SiC interface charge density is quantified. A carrier lifetime enhancement process has been optimized for lightly doped

  1. High power thyristors with 5 kV blocking voltage. Volume 1: Development of high-voltage-thyristors (4.5 kV) with good dynamic properties

    NASA Technical Reports Server (NTRS)

    Lock, K.; Patalong, H.; Platzoeder, K.

    1979-01-01

    Using neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.

  2. High voltage pulse ignition of mercury discharge hollow cathodes

    NASA Technical Reports Server (NTRS)

    Wintucky, E. G.

    1973-01-01

    A high voltage pulse generated by a capacitor discharge into a step-up transformer has been demonstrated capable of consistently igniting hollow cathode mercury discharges at propellant flows and heater power levels much below those required by conventional cathode starting. Results are presented for 3.2-mm diameter enclosed and open keeper cathodes. Starting characteristics are shown to depend on keeper voltage, mercury flow rate, heater power, keeper orifice size, emissive materials, and electrode to which the pulse is applied. This starting technique has been used to start a cathode over 10,000 times without any degradation of starting capability.

  3. Development of Murray Loop Bridge for High Induced Voltage

    NASA Astrophysics Data System (ADS)

    Isono, Shigeki; Kawasaki, Katsutoshi; Kobayashi, Shin-Ichi; Ishihara, Hayato; Chiyajo, Kiyonobu

    In the case of the cable fault that ground fault resistance is less than 10MΩ, Murray Loop Bridge is excellent as a fault locator in location accuracy and the convenience. But, when the induction of several hundred V is taken from the single core cable which adjoins it, a fault location with the high voltage Murray Loop Bridge becomes difficult. Therefore, we developed Murray Loop Bridge, which could be applied even when the induced voltage of several hundred V occurs in the measurement cable. The evaluation of the fault location accuracy was done with the developed prototype by the actual line and the training equipment.

  4. Dynamics of ionization processes in high-pressure nitrogen, air, and SF{sub 6} during a subnanosecond breakdown initiated by runaway electrons

    SciTech Connect

    Tarasenko, V. F. Beloplotov, D. V.; Lomaev, M. I.

    2015-10-15

    The dynamics of ionization processes in high-pressure nitrogen, air, and SF{sub 6} during breakdown of a gap with a nonuniform distribution of the electric field by nanosecond high-voltage pulses was studied experimentally. Measurements of the amplitude and temporal characteristics of a diffuse discharge and its radiation with a subnanosecond time resolution have shown that, at any polarity of the electrode with a small curvature radius, breakdown of the gap occurs via two ionization waves, the first of which is initiated by runaway electrons. For a voltage pulse with an ∼500-ps front, UV radiation from different zones of a diffuse discharge is measured with a subnanosecond time resolution. It is shown that the propagation velocity of the first ionization wave increases after its front has passed one-half of the gap, as well as when the pressure in the discharge chamber is reduced and/or when SF{sub 6} is replaced with air or nitrogen. It is found that, at nitrogen pressures of 0.4 and 0.7 MPa and the positive polarity of the high-voltage electrode with a small curvature radius, the ionization wave forms with a larger (∼30 ps) time delay with respect to applying the voltage pulse to the gap than at the negative polarity. The velocity of the second ionization wave propagating from the plane electrode is measured. In a discharge in nitrogen at a pressure of 0.7 MPa, this velocity is found to be ∼10 cm/ns. It is shown that, as the nitrogen pressure increases to 0.7 MPa, the propagation velocity of the front of the first ionization wave at the positive polarity of the electrode with a small curvature radius becomes lower than that at the negative polarity.

  5. Dynamics of ionization processes in high-pressure nitrogen, air, and SF6 during a subnanosecond breakdown initiated by runaway electrons

    NASA Astrophysics Data System (ADS)

    Tarasenko, V. F.; Beloplotov, D. V.; Lomaev, M. I.

    2015-10-01

    The dynamics of ionization processes in high-pressure nitrogen, air, and SF6 during breakdown of a gap with a nonuniform distribution of the electric field by nanosecond high-voltage pulses was studied experimentally. Measurements of the amplitude and temporal characteristics of a diffuse discharge and its radiation with a subnanosecond time resolution have shown that, at any polarity of the electrode with a small curvature radius, breakdown of the gap occurs via two ionization waves, the first of which is initiated by runaway electrons. For a voltage pulse with an ˜500-ps front, UV radiation from different zones of a diffuse discharge is measured with a subnanosecond time resolution. It is shown that the propagation velocity of the first ionization wave increases after its front has passed one-half of the gap, as well as when the pressure in the discharge chamber is reduced and/or when SF6 is replaced with air or nitrogen. It is found that, at nitrogen pressures of 0.4 and 0.7 MPa and the positive polarity of the high-voltage electrode with a small curvature radius, the ionization wave forms with a larger (˜30 ps) time delay with respect to applying the voltage pulse to the gap than at the negative polarity. The velocity of the second ionization wave propagating from the plane electrode is measured. In a discharge in nitrogen at a pressure of 0.7 MPa, this velocity is found to be ˜10 cm/ns. It is shown that, as the nitrogen pressure increases to 0.7 MPa, the propagation velocity of the front of the first ionization wave at the positive polarity of the electrode with a small curvature radius becomes lower than that at the negative polarity.

  6. Laboratory 15 kV high voltage solar array facility

    NASA Technical Reports Server (NTRS)

    Kolecki, J. C.; Gooder, S. T.

    1976-01-01

    The laboratory high voltage solar array facility is a photoelectric power generating system. Consisting of nine modules with over 23,000 solar cells, the facility is capable of delivering more than a kilowatt of power. The physical and electrical characteristics of the facility are described.

  7. 59. View of high voltage (4160 volts alternating current) electric ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    59. View of high voltage (4160 volts alternating current) electric load center and motor control center at mezzanine level in transmitter building no. 102. - Clear Air Force Station, Ballistic Missile Early Warning System Site II, One mile west of mile marker 293.5 on Parks Highway, 5 miles southwest of Anderson, Anderson, Denali Borough, AK

  8. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOEpatents

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  9. The design and development of a high voltage power supply

    NASA Technical Reports Server (NTRS)

    Ting, R.

    1974-01-01

    A high voltage circuit system was redesigned, breadboarded, and tested to meet revised specification requirements. Circuit component subassemblies are described and include the firing unit, regulator, dc to dc converter, and output and trigger circuits. Design changes, tests, and equipment fabrication are outlined chronologically by month. A list of design specifications is included.

  10. Scattering Efficiency of High-Voltage Tethers in Space

    NASA Technical Reports Server (NTRS)

    Krivorutsky, E. N.; Khazanov, G. V.; Gamayunov, K. V.; Avanov, L. A.

    2005-01-01

    Several concepts have been proposed to remediate the effect of artificial Radiation Belts (RB) in Space Plasma. Among them is the high-voltage electrostatic tether remediation technique. Preliminary analysis that has been carried out later by several groups showed, that this technique could be very efficient and is able to control relativistic electron energies of artificial RB population. The relativistic electron population is the one of the most important topic of US Space Weather studies and very dangerous to many civilian and military space assets, it is also important to study some fundamentals of scattering efficiency of high-voltage tethers in space plasma. There are several fundamental issues that should be examined in order to validate high-voltage tether artificial RB remediation concept. The most critical among them are: power consumption, the size and stability of the plasma sheath around the tether, and scattering efficiency of this high-voltage system that is ultimately related with the plasma sheath size. This study would be focused on the scattering process itself and artificial RB remediation assuming that power consumption and the size of the plasma sheath are known.

  11. High voltage gas insulated transmission line with continuous particle trapping

    DOEpatents

    Cookson, Alan H.; Dale, Steinar J.

    1983-01-01

    This invention provides a novel high voltage gas insulated transmission line utilizing insulating supports spaced at intervals with snap-in means for supporting a continuous trapping apparatus and said trapping apparatus having perforations and cutouts to facilitate trapping of contaminating particles and system flexibility.

  12. Evidence of Magnetic Breakdown on the Defects With Thermally Suppressed Critical Field in High Gradient SRF Cavities

    SciTech Connect

    Eremeev, Grigory; Palczewski, Ari

    2013-09-01

    At SRF 2011 we presented the study of quenches in high gradient SRF cavities with dual mode excitation technique. The data differed from measurements done in 80's that indicated thermal breakdown nature of quenches in SRF cavities. In this contribution we present analysis of the data that indicates that our recent data for high gradient quenches is consistent with the magnetic breakdown on the defects with thermally suppressed critical field. From the parametric fits derived within the model we estimate the critical breakdown fields.

  13. Deep Space One High-Voltage Bus Management

    NASA Technical Reports Server (NTRS)

    Rachocki, Ken; Nieraeth, Donald

    1999-01-01

    The design of the High Voltage Power Converter Unit on DS1 allows both the spacecraft avionics and ion propulsion to operate in a stable manner near the PPP of the solar array. This approach relies on a fairly well-defined solar array model to determine the projected PPP. The solar array voltage set-points have to be updated every week to maintain operation near PPP. Stable operation even to the LEFT of the Peak Power Point is achievable so long as you do not change the operating power level of the ion engine. The next step for this technology is to investigate the use of onboard autonomy to determine the optimum SA voltage regulation set-point (i.e. near the PPP); this is for future missions that have one or more ion propulsion subsystems.

  14. Breakdown mechanism in AlGaN/GaN high-electron mobility transistor structure on free-standing n-type GaN substrate

    NASA Astrophysics Data System (ADS)

    Tanabe, Shinichi; Watanabe, Noriyuki; Matsuzaki, Hideaki

    2016-05-01

    The breakdown mechanism in a high-electron mobility transistor structure on free-standing n-type GaN substrates consisting of a C-doped GaN layer as a high-resistivity buffer was investigated with a two-terminal vertical device that has a C-doped GaN buffer between electrodes. Initially, current density increases with the square of bias voltage. This is then followed by an abrupt increase by several orders of magnitude within ten volts, which results in breakdown. These behaviors are consistent with the theory of the space-charge limited current. In this theory, current density increases steeply when trap sites at a certain energy level are completely filled with injected carriers. These results indicate that the existence of trap levels in the C-doped GaN layer is one of the possible factors that determine the breakdown. The trap density and trap level of the C-doped GaN layer were also evaluated.

  15. High temperature behavior of multi-region direct current current-voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal-oxide-semiconductor field-effect-transistors reliability

    NASA Astrophysics Data System (ADS)

    He, Yandong; Zhang, Ganggang; Zhang, Xing

    2014-01-01

    With the process compatibility with the mainstream standard complementary metal-oxide-semiconductor (CMOS), shallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular for its better tradeoff between breakdown voltage and performance, especially for smart power applications. A multi-region direct current current-voltage (MR-DCIV) technique with spectroscopic features was demonstrated to map the interface state generation in the channel, accumulation and STI drift regions. High temperature behavior of MR-DCIV spectroscopy was analyzed and a physical model was verified. Degradation of STI-based LDMOS transistors under high temperature reverse bias (HTRB) stress is experimentally studied by MR-DCIV spectroscopy. The impact of interface state location on device electrical characteristics was investigated. Our results show that the major contribution to HTRB degradation, in term of the on-resistance degradation, was attributed to interface state generation under STI drift region.

  16. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Underground high-voltage longwall cables. 75... MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the...

  17. 30 CFR 77.800 - High-voltage circuits; circuit breakers.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High-voltage circuits supplying power to portable or mobile equipment shall be protected by suitable...

  18. 30 CFR 77.800 - High-voltage circuits; circuit breakers.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... devices to provide protection against under voltage, grounded phase, short circuit and overcurrent. High... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers....

  19. Next generation KATRIN high precision voltage divider for voltages up to 65kV

    NASA Astrophysics Data System (ADS)

    Bauer, S.; Berendes, R.; Hochschulz, F.; Ortjohann, H.-W.; Rosendahl, S.; Thümmler, T.; Schmidt, M.; Weinheimer, C.

    2013-10-01

    The KATRIN (KArlsruhe TRItium Neutrino) experiment aims to determine the mass of the electron antineutrino with a sensitivity of 200 meV by precisely measuring the electron spectrum of the tritium beta decay. This will be done by the use of a retarding spectrometer of the MAC-E-Filter type. To achieve the desired sensitivity the stability of the retarding potential of -18.6 kV has to be monitored with a precision of 3 ppm over at least two months. Since this is not feasible with commercial devices, two ppm-class high voltage dividers were developed, following the concept of the standard divider for DC voltages of up to 100 kV of the Physikalisch-Technische Bundesanstalt (PTB). In order to reach such high accuracies different effects have to be considered. The two most important ones are the temperature dependence of resistance and leakage currents, caused by insulators or corona discharges. For the second divider improvements were made concerning the high-precision resistors and the thermal design of the divider. The improved resistors are the result of a cooperation with the manufacturer. The design improvements, the investigation and the selection of the resistors, the built-in ripple probe and the calibrations at PTB will be reported here. The latter demonstrated a stability of about 0.1 ppm/month over a period of two years.

  20. Surface dynamics of amorphous polymers used for high-voltage insulators.

    PubMed

    Shemella, Philip T; Laino, Teodoro; Fritz, Oliver; Curioni, Alessandro

    2011-11-24

    Amorphous siloxane polymers are the backbone of high-voltage insulation materials. The natural hydrophobicity of their surface is a necessary property for avoiding leakage currents and dielectric breakdown. As these surfaces are exposed to the environment, electrical discharges or strong mechanical impact can temporarily destroy their water-repellent properties. After such events, however, a self-healing process sets in and restores the original hydrophobicity within some hours. In the present study, we investigate possible mechanisms of this restoration process. Using large-scale, all-atom molecular dynamics simulations, we show that molecules on the material surface have augmented motion that allows them to rearrange with a net polarization. The overall surface region has a net orientation that contributes to hydrophobicity, and charged groups that are placed at the surface migrate inward, away from the vacuum interface and into the bulk-like region. Our simulations provide insight into the mechanisms for hydrophobic self-recovery that repair material strength and functionality and suggest material compositions for future high-voltage insulators. PMID:22026429

  1. BANSHEE: High-voltage repetitively pulsed electron-beam driver

    SciTech Connect

    VanHaaften, F.

    1992-08-01

    BANSHEE (Beam Accelerator for a New Source of High-Energy Electrons) this is a high-voltage modulator is used to produce a high-current relativistic electron beam for high-power microwave tube development. The goal of the BANSHEE research is first to achieve a voltage pulse of 700--750 kV with a 1-{mu}s pulse width driving a load of {approximately}100 {Omega}, the pulse repetition frequency (PRF) of a few hertz. The ensuing goal is to increase the pulse amplitude to a level approaching 1 MV. We conducted tests using half the modulator with an output load of 200 {Omega}, up to a level of {approximately}650 kV at a PRF of 1 Hz and 525 kV at a PRF of 5 Hz. We then conducted additional testing using the complete system driving a load of {approximately}100 {Omega}.

  2. BANSHEE: High-voltage repetitively pulsed electron-beam driver

    SciTech Connect

    VanHaaften, F.

    1992-01-01

    BANSHEE (Beam Accelerator for a New Source of High-Energy Electrons) this is a high-voltage modulator is used to produce a high-current relativistic electron beam for high-power microwave tube development. The goal of the BANSHEE research is first to achieve a voltage pulse of 700--750 kV with a 1-{mu}s pulse width driving a load of {approximately}100 {Omega}, the pulse repetition frequency (PRF) of a few hertz. The ensuing goal is to increase the pulse amplitude to a level approaching 1 MV. We conducted tests using half the modulator with an output load of 200 {Omega}, up to a level of {approximately}650 kV at a PRF of 1 Hz and 525 kV at a PRF of 5 Hz. We then conducted additional testing using the complete system driving a load of {approximately}100 {Omega}.

  3. 76 FR 70721 - Voltage Coordination on High Voltage Grids; Notice of Staff Workshop

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-15

    ... software could improve reliability and market efficiency. The workshop will address how entities currently coordinate economic dispatch and voltage control and the capability of existing and emerging software to... interested in better understanding the interaction between voltage control, reliability, and...

  4. Precision high voltage divider for the KATRIN experiment

    NASA Astrophysics Data System (ADS)

    Thümmler, Th; Marx, R.; Weinheimer, Ch

    2009-10-01

    The Karlsruhe Tritium Neutrino (KATRIN) experiment aims to determine the absolute mass of the electron antineutrino from a precise measurement of the tritium β-spectrum near its endpoint at 18.6 keV with a sensitivity of 0.2 eV c-2. KATRIN uses an electrostatic retardation spectrometer of MAC-E filter type for which it is crucial to monitor high voltages of up to 35 kV with a precision and long-term stability at the ppm level. Since devices capable of this precision are not commercially available, a new high voltage divider for direct voltages of up to 35 kV has been designed, following the new concept of the standard divider for direct voltages of up to 100 kV developed at the Physikalisch-Technische Bundesanstalt (PTB)PTB is the German National Metrology Institute providing scientific and technical services.. The electrical and mechanical design of the divider, the screening procedure for the selection of the precision resistors, and the results of the investigation and calibration at the PTB are reported here. During the latter, uncertainties at the low ppm level have been deduced for the new divider, thus qualifying it for the precision measurements of the KATRIN experiment.

  5. Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT

    NASA Astrophysics Data System (ADS)

    Xiaoli, Tian; Jiang, Lu; Yuan, Teng; Wenliang, Zhang; Shuojin, Lu; Yangjun, Zhu

    2015-03-01

    The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N+ buffer layer, the other is decreasing the implant dose of the P+ collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT. Project supported by the National Major Science and Technology Special Project of China (No. 2011ZX02503-003).

  6. Laser-induced breakdown spectroscopy at high temperatures in industrial boilers and furnaces

    NASA Astrophysics Data System (ADS)

    Blevins, Linda G.; Shaddix, Christopher R.; Sickafoose, Shane M.; Walsh, Peter M.

    2003-10-01

    Laser-induced breakdown spectroscopy (LIBS) was applied (1) near the superheater of an electric power generation boiler burning biomass, coal, or both; (2) at the exit of a glass-melting furnace burning natural gas and oxygen; and (3) near the nose arches of two paper mill recovery boilers burning black liquor. Difficulties associated with the high temperatures and high particle loadings in these environments were surmounted by use of novel LIBS probes. Echelle and linear spectrometers coupled to intensified CCD cameras were used individually and sometimes simultaneously. Elements detected include Na, K, Ca, Mg, C, B, Si, Mn, Al, Fe, Rb, Cl, and Ti.

  7. Laser-induced breakdown spectroscopy at high temperatures in industrial boilers and furnaces.

    PubMed

    Blevins, Linda G; Shaddix, Christopher R; Sickafoose, Shane M; Walsh, Peter M

    2003-10-20

    Laser-induced breakdown spectroscopy (LIBS) was applied (1) near the superheater of an electric power generation boiler burning biomass, coal, or both; (2) at the exit of a glass-melting furnace burning natural gas and oxygen; and (3) near the nose arches of two paper mill recovery boilers burning black liquor. Difficulties associated with the high temperatures and high particle loadings in these environments were surmounted by use of novel LIBS probes. Echelle and linear spectrometers coupled to intensified CCD cameras were used individually and sometimes simultaneously. Elements detected include Na, K, Ca, Mg, C, B, Si, Mn, Al, Fe, Rb, Cl, and Ti. PMID:14594073

  8. Fast-Recovery, High-Voltage Power Diode

    NASA Technical Reports Server (NTRS)

    Sundberg, G.; Berman, A.; Balodis, V.; Gaugh, C.; Duffin, J.; Karatnicki, H.; Larson, E.

    1985-01-01

    New family of fast-recovery high-voltage power diodes compatible with D60T and D7ST transistors developed. Have wide range of applications in spacecraft and aircraft electrical distribution equipment, dc/dc inverters, and ac motor controllers for high-horsepower electric motors operating from 480-volt ac lines. Fast-Recovery 1,200-V Power Diodes use chip of hexagonal geometry to maximize effective silicon area.

  9. Innovative Field Emitters for High-Voltage Electronic Devices

    NASA Astrophysics Data System (ADS)

    Sominski, G. G.; Sezonov, V. E.; Taradaev, E. P.; Tumareva, T. A.; Zadiranov, Yu. M.; Kornishin, S. Yu.; Stepanova, A. N.

    2015-12-01

    We describe multitip field emitters with protective coatings, which were developed in Peter the Great St. Petersburg Polytechnic University. The coatings ensure long-term operation of the emitters under high currents and technical vacuum. Innovative multi-layer emitters composed of contacting nanolayers of materials with different work functions are presented as well. The possibility by using the developed emitters in high-voltage electronic devices is demonstrated.

  10. Directed Self-Assembly of Block Copolymers for High Breakdown Strength Polymer Film Capacitors.

    PubMed

    Samant, Saumil P; Grabowski, Christopher A; Kisslinger, Kim; Yager, Kevin G; Yuan, Guangcui; Satija, Sushil K; Durstock, Michael F; Raghavan, Dharmaraj; Karim, Alamgir

    2016-03-01

    Emerging needs for fast charge/discharge yet high-power, lightweight, and flexible electronics requires the use of polymer-film-based solid-state capacitors with high energy densities. Fast charge/discharge rates of film capacitors on the order of microseconds are not achievable with slower charging conventional batteries, supercapacitors and related hybrid technologies. However, the current energy densities of polymer film capacitors fall short of rising demand, and could be significantly enhanced by increasing the breakdown strength (EBD) and dielectric permittivity (εr) of the polymer films. Co-extruded two-homopolymer component multilayered films have demonstrated much promise in this regard showing higher EBD over that of component polymers. Multilayered films can also help incorporate functional features besides energy storage, such as enhanced optical, mechanical, thermal and barrier properties. In this work, we report accomplishing multilayer, multicomponent block copolymer dielectric films (BCDF) with soft-shear driven highly oriented self-assembled lamellar diblock copolymers (BCP) as a novel application of this important class of self-assembling materials. Results of a model PS-b-PMMA system show ∼50% enhancement in EBD of self-assembled multilayer lamellar BCP films compared to unordered as-cast films, indicating that the breakdown is highly sensitive to the nanostructure of the BCP. The enhancement in EBD is attributed to the "barrier effect", where the multiple interfaces between the lamellae block components act as barriers to the dielectric breakdown through the film. The increase in EBD corresponds to more than doubling the energy storage capacity using a straightforward directed self-assembly strategy. This approach opens a new nanomaterial paradigm for designing high energy density dielectric materials. PMID:26942835

  11. High-voltage pixel sensors for ATLAS upgrade

    NASA Astrophysics Data System (ADS)

    Perić, I.; Kreidl, C.; Fischer, P.; Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M.; Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B.; Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A.; Nessi, M.; Iacobucci, G.; Backhaus, M.; Hügging, Fabian; Krüger, H.; Hemperek, T.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Quadt, A.; Weingarten, J.; George, M.; Grosse-Knetter, J.; Rieger, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.

    2014-11-01

    The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

  12. Dielectric breakdown in mineral oil ITO 100 based magnetic fluid

    NASA Astrophysics Data System (ADS)

    Kudelcik, J.; Bury, P.; Kopcansky, P.; Timko, M.

    The development of dielectric breakdown and the DC dielectric breakdown voltage of magnetic fluids based on inhibited transformer oil ITO 100 were investigated in parallel orientations of external magnetic field. It was shown that the breakdown voltage is strongly influenced by the magnetic nanoparticles. The magnetic fluids with the volume concentration 1and 0.2% had better dielectric properties than pure transformer oil. The increase of breakdown voltage was interpreted on the base of the bubble theory of breakdown.

  13. High-voltage pulsed life of multistressed polypropylene capacitor dielectric

    SciTech Connect

    Laghari, J.R. )

    1992-02-01

    High-voltage polypropylene capacitors were aged under singular as well as simultaneous multiple stresses (electrical, thermal, and radiation) at the University of Buffalo's 2 MW thermal nuclear reactor. These stresses were combined neutron-gamma radiation with a total dose of 1.6 {times} 10{sup 6} rad, electrical stress at 40 V{sub rms}/{mu}m, and thermal stress at 90{degrees} C. After exposure, the polypropylene dielectric was tested for life (number of pulses to fail) under high-voltage high-repetition-rate (100 pps) pulses. Pulsed life data were also compared with ac life data. Results show that radiation stress causes the most degradation in life, either acting alone or in combination with other stresses. The largest reduction in life occurs when polypropylene is aged under simultaneous multiple stresses (electrical, thermal, and radiation). In this paper, it is shown that pulsed life can be equivalently compared with ac life.

  14. 30 CFR 75.800 - High-voltage circuits; circuit breakers.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... with devices to provide protection against under-voltage grounded phase, short circuit, and overcurrent. ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage circuits; circuit breakers. 75.800... § 75.800 High-voltage circuits; circuit breakers. High-voltage circuits entering the underground...

  15. 30 CFR 75.807 - Installation of high-voltage transmission cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Installation of high-voltage transmission...-Voltage Distribution § 75.807 Installation of high-voltage transmission cables. All underground high-voltage transmission cables shall be installed only in regularly inspected air courses and...

  16. Stable Josephson reference voltages between 0. 1 and 1. 3 V for high-precision voltage standards

    SciTech Connect

    Niemeyer, J.; Grimm, L.; Meier, W.; Hinken, J.H.; Vollmer, E.

    1985-12-01

    A new series array of 1440 Josephson tunnel junctions has been developed and tested as a reference voltage standard. It yields microwave induced quantized voltage steps up to 1.3 V. The steps are usually stable for more than 5 h with a microwave driving frequency of either 70 or 90 GHz. A high-resolution comparison of a constant voltage step at the 1-V level with the electromotive force of a saturated Weston cell is described. The comparison shows that the step voltage is constant to within +- 1 nV over the full step width.

  17. Stable Josephson reference voltages between 0.1 and 1.3 V for high precision voltage standards

    NASA Astrophysics Data System (ADS)

    Niemeyer, J.; Grimm, L.; Meier, W.; Hinken, J. H.; Vollmer, E.

    1985-12-01

    A new series array of 1440 Josephson tunnel junctions has been developed and tested as a reference voltage standard. It yields microwave induced quantized voltage steps up to 1.3 V. The steps are usually stable for more than 5 h with a microwave driving frequency of either 70 or 90 GHz. A high-resolution comparison of a constant voltage step at the 1-V level with the electromotive force of a saturated Weston cell is described. The comparison shows that the step voltage is constant to within + or - 1 nV over the full step width.

  18. Reversible, high-voltage square-wave pulse generator for triggering spark gaps.

    PubMed

    Robledo-Martinez, A; Vega, R; Cuellar, L E; Ruiz-Meza, A; Guzmán, E

    2007-05-01

    A design is presented for a reversible, square-pulse generator that employs coaxial cables for charge storage and pulse formation and a thyratron as the switch. The generator has a nominal output voltage of 5-30 kV and a pulse duration determined by the cable's physical length. Two variations are presented: (1) a single-stage one consisting of cable that is charged via its shield on one end and discharged with a thyratron on the opposite end and (2) a two-stage one having an inverting circuit that uses a coaxial cable to reverse the polarity of the pulse. The generator operates with "flying shields," i.e., high-voltage pulses also propagate on the outside of the cables; this calls for a dedicated insulation that avoids breakdown between sections of the cable's shield. The rise time obtained is mostly dictated by the switching time of the thyratron; with the one we used in the tests, rise times in the range of 30-40 ns were obtained. We present the results obtained in the implementation of the generators as well as its application to fire a large Marx generator. PMID:17552866

  19. High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOEpatents

    Shimer, D.W.; Lange, A.C.

    1995-05-23

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

  20. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOEpatents

    Shimer, Daniel W.; Lange, Arnold C.

    1995-01-01

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  1. Ultrafast laser induced breakdown spectroscopy for high spatial resolution chemical analysis

    NASA Astrophysics Data System (ADS)

    Zorba, Vassilia; Mao, Xianglei; Russo, Richard E.

    2011-02-01

    Femtosecond laser induced breakdown spectroscopy (LIBS) was used to identify the spatial resolution limitations and assess the minimal detectable mass restrictions in laser-ablation based chemical analysis. The atomic emission of sodium (Na) and potassium (K) dopants in transparent dielectric Mica matrices was studied, to find that both these elements could be detected from 450 nm diameter ablation craters, full-width-at-half-maximum (FWHM). Under optimal conditions, mass as low as 220 ag was measured, demonstrating the feasibility of using laser-ablation based chemical analysis to achieve high spatial resolution elemental analysis in real-time and at atmospheric pressure conditions.

  2. Test wire for high voltage power supply crowbar system

    SciTech Connect

    Bradley, J.T. III; Collins, M.

    1997-09-01

    The klystron microwave amplifier tubes used in the Low Energy Demonstration Accelerator (LEDA) and to be used in the Accelerator Production of Tritium (APT) plant have a strict upper limit on the amount of energy which can be safely dissipated within the klystron`s vacuum envelope during a high voltage arc. One way to prevent damage from occurring to the klystron microwave amplifier tube is through the use of a crowbar circuit which diverts the energy stored in the power supply filter capacitors from the tube arc. The crowbar circuit must be extremely reliable. To test the crowbar circuit, a wire that is designed to fuse when it absorbs a predetermined amount of energy is switched between the high voltage output terminals. The energy required to fuse the wire was investigated for a variety of circuits that simulated the power supply circuit. Techniques for calculating wire length and energy are presented along with verifying experimental data.

  3. High voltage processing of the SLC polarized electron gun

    SciTech Connect

    Saez, P.; Clendenin, J.; Garden, C.; Hoyt, E.; Klaisner, L.; Prescott, C.; Schultz, D.; Tang, H.

    1993-04-01

    The SLC polarized electron gun operates at 120 kV with very low dark current to maintain the ultra high vacuum (UHV). This strict requirement protects the extremely sensitive photocathode from contaminants caused by high voltage (HV) activity. Thorough HV processing is thus required x-ray sensitive photographic film, a nanoammeter in series with gun power supply, a radiation meter, a sensitive residual gas analyzer and surface x-ray spectrometry were used to study areas in the gun where HV activity occurred. By reducing the electric field gradients, carefully preparing the HV surfaces and adhering to very strict clean assembly procedures, we found it possible to process the gun so as to reduce both the dark current at operating voltage and the probability of HV discharge. These HV preparation and processing techniques are described.

  4. High voltage insulation of bushing for HTS power equipment

    NASA Astrophysics Data System (ADS)

    Kim, Woo-Jin; Choi, Jae-Hyeong; Kim, Sang-Hyun

    2012-12-01

    For the operation of high temperature superconducting (HTS) power equipments, it is necessary to develop insulating materials and high voltage (HV) insulation technology at cryogenic temperature of bushing. Liquid nitrogen (LN2) is an attractive dielectric liquid. Also, the polymer insulating materials are expected to be used as solid materials such as glass fiber reinforced plastic (GFRP), polytetra-fluoroethylene (PTFE, Teflon), Silicon (Si) rubber, aromatic polyamide (Nomex), EPDM/Silicon alloy compound (EPDM/Si). In this paper, the surface flashover characteristics of various insulating materials in LN2 are studied. These results are studied at both AC and impulse voltage under a non-uniform field. The use of GFRP and Teflon as insulation body for HTS bushing should be much desirable. Especially, GFRP is excellent material not only surface flashover characteristics but also mechanical characteristics at cryogenic temperature. The surface flashover is most serious problem for the shed design in LN2 and operation of superconducting equipments.

  5. Electrochemical Capacitors with High Output Voltages that Mimic Electric Eels.

    PubMed

    Sun, Hao; Fu, Xuemei; Xie, Songlin; Jiang, Yishu; Peng, Huisheng

    2016-03-01

    A new family of energy-storage devices is created by mimicking the electric eel to obtain a high output voltage. These novel energy-storage devices are flexible, stretchable, and weavable fibers, which satisfies the needs of next-generation portable and wearable electronics. The devices are fabricated via a continuous fabrication technology to effectively power electronic watches and light-emitting diodes as two examples. PMID:26766594

  6. Properties of UN Sintered by High Voltage Electric Discharge Consolidation

    NASA Astrophysics Data System (ADS)

    Yurlova, M.; Tarasov, B.; Shornikov, D.; Grigoryev, E.; Olevsky, E.

    In the present work, the opportunity of the consolidation of uranium nitride tablets by high voltage electric discharge consolidation (HVEDC) is considered. It is shown that the consolidation by HVEDC allows the prevention of the expansion of uranium nitride powders and renders pellets with relative density of up to 97%. The thermal stability of the obtained samples has been investigated. The analysis of the microstructure of the processed samples indicates the retention of the initial powder structure

  7. Drift region doping effects on characteristics and reliability of high-voltage n-type metal-oxide-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Chen, Jone F.; Chang, Chun-Po; Liu, Yu Ming; Tsai, Yan-Lin; Hsu, Hao-Tang; Chen, Chih-Yuan; Hwang, Hann-Ping

    2016-01-01

    In this study, off-state breakdown voltage (VBD) and hot-carrier-induced degradation in high-voltage n-type metal-oxide-semiconductor transistors with various BF2 implantation doses in the n- drift region are investigated. Results show that a higher BF2 implantation dose results in a higher VBD but leads to a greater hot-carrier-induced device degradation. Experimental data and technology computer-aided design simulations suggest that the higher VBD is due to the suppression of gate-induced drain current. On the other hand, the greater hot-carrier-induced device degradation can be explained by a lower net donor concentration and a different current-flow path, which is closer to the Si-SiO2 interface.

  8. Analysis of high-voltage metal–oxide–semiconductor transistors with gradual junction in the drift region

    NASA Astrophysics Data System (ADS)

    Chen, Jone F.; Ai, Teng-Jen; Tsai, Yan-Lin; Hsu, Hao-Tang; Chen, Chih-Yuan; Hwang, Hann-Ping

    2016-08-01

    The device characteristics and hot-carrier-induced degradation of high-voltage n-type metal–oxide–semiconductor transistors with traditional and gradual junctions in the drift region are studied in this work. The gradual junction used in this study is realized by self-aligned N‑ implantation through dual thicknesses of screen oxide during N‑ drift implantation. Compared with traditional devices, devices with gradual junctions have improved off-state breakdown voltage (V BD) without sacrificing on-state driving current and hot-carrier-induced degradation. More improvement in V BD is observed if the dimensions of the device are larger. The mechanism responsible for V BD improvement in devices with gradual junctions is also investigated by using technology computer-aided-design simulations.

  9. Development and testing of an active high voltage saturation probe for characterization of ultra-high voltage silicon carbide semiconductor devices.

    PubMed

    Bilbao, Argenis V; Schrock, James A; Ray, William B; Kelley, Mitchell D; Holt, Shad L; Giesselmann, Michael G; Bayne, Stephen B

    2015-08-01

    Obtaining accurate collector to emitter voltage measurements when characterizing high voltage silicon carbide (SiC) devices requires the ability to measure voltages in the range of zero to 10 V while the device is in the on-state and the ability to withstand ultra-high voltages while the device is in the off-state. This paper presents a specialized voltage probe capable of accurately measuring the aforementioned range. A comparison is made between the proposed probe and other commonly used high voltage probe alternatives in relation to high voltage SiC device testing. Testing of the probe was performed to ensure linearity, high accuracy, and high bandwidth. PMID:26329230

  10. Low-temperature (77-300 K) current-voltage characteristics of 4H-SiC p{sup +}-p-n{sup +} diodes: Effect of impurity breakdown in the p-type base

    SciTech Connect

    Ivanov, P. A. Potapov, A. S.; Samsonova, T. P.

    2012-04-15

    The effect of impurity breakdown on the low-temperature (77-300 K) current-voltage (I-V) characteristics of 4H-SiC diodes with a p-type base has been studied. Experimental samples were fabricated from CVD-grown (chemical vapor deposition) commercial p{sup +}-p-n{sup +} 4H-SiC structures. A high electric field in the p-type base was created by applying a forward bias to the diodes. It was found that, at temperatures of 136, 89, and 81 K, the commonly observed 'diode' portion of the I-V characteristics is followed by a portion in which the current grows more rapidly due to the impact ionization of frozen-out Al acceptor atoms in the ground (unexcited) state. At temperatures of 81 and 77 K, this portion is followed by one with a negative differential resistance due to the regenerative dynistor-like switching of the diode, caused by impact ionization of aluminum atoms in the excited state.

  11. A study of dielectric breakdown along insulators surrounding conductors in liquid argon

    SciTech Connect

    Lockwitz, Sarah; Jostlein, Hans

    2015-06-12

    High voltage breakdown in liquid argon is an important concern in the design of liquid argon time projection chambers, which are often used as neutrino and dark matter detectors. We have made systematic measurements of breakdown voltages in liquid argon along insulators surrounding negative rod electrodes where the breakdown is initiated at the anode. The measurements were performed in an open cryostat filled with commercial grade liquid argon exposed to air, and not the ultra-pure argon required for electron drift. While not addressing all high voltage concerns in liquid argon, these measurements have direct relevance to the design of high voltage feedthroughs especially for averting the common problem of flash-over breakdown. The purpose of these tests is to understand the effects of materials, of breakdown path length, and of surface topology for this geometry and setup. We have found that the only material-specific effects are those due to their permittivity. We have found that the breakdown voltage has no dependence on the length of the exposed insulator. Lastly, a model for the breakdown mechanism is presented that can help inform future designs.

  12. Improvement of a voltage multiplier for RSFQ-D/A converters with high output voltages

    NASA Astrophysics Data System (ADS)

    Hirayama, Fuminori; Maezawa, Masaaki; Suzuki, Motohiro

    2004-10-01

    Rapid single flux quantum (RSFQ) digital-to-analog (D/A) converters that synthesize arbitrary waveforms with metrological accuracy are under development. In the D/A converter, a magnetically coupled voltage multiplier (VM) is utilized as a precise frequency-to-voltage converter that generates a voltage proportional to the input frequency. To increase the output voltage of the VM, parameters that determine the cycle time of the VM cell were optimized. Experimental results obtained with 16-stage VMs showed that the maximum operating frequency of the new VM was 50 GHz, which is twice that of the previous type.

  13. Loss Reduction on Adoption of High Voltage LT Less Distribution

    NASA Astrophysics Data System (ADS)

    Tiwari, Deepika; Adhikari, Nikhileshwar Prasad; Gupta, Amit; Bajpai, Santosh Kumar

    2015-03-01

    In India there is a need to improve the quality of the electricity distribution process which has increased varying from year to year. In distribution networks, the limiting factor to load carrying capacity is generally the voltage reduction. High voltage distribution system (HVDS) is one of the steps to reduce line losses in electrical distribution network. It helps to reduce the length of low tension (LT) lines and makes the power available close to the users. The high voltage power distribution system reduces the probability of power theft by hooking HVDS suggests an increase in installation of small capacity single-phase transformers in the network which again save considerable energy. This paper is compared to existing conventional low tension distribution network with HVDS. The paper gives a clear picture of reduction in distribution losses with adoption of HVDS system. Losses Reduction of 11 kV Feeder in Nuniya (India) with adoption of HVDS have been worked out/ quantified and benefits thereby in generating capacity have discussed.

  14. Loss Reduction on Adoption of High Voltage LT Less Distribution

    NASA Astrophysics Data System (ADS)

    Tiwari, Deepika; Adhikari, Nikhileshwar Prasad; Gupta, Amit; Bajpai, Santosh Kumar

    2016-06-01

    In India there is a need to improve the quality of the electricity distribution process which has increased varying from year to year. In distribution networks, the limiting factor to load carrying capacity is generally the voltage reduction. High voltage distribution system (HVDS) is one of the steps to reduce line losses in electrical distribution network. It helps to reduce the length of low tension (LT) lines and makes the power available close to the users. The high voltage power distribution system reduces the probability of power theft by hooking HVDS suggests an increase in installation of small capacity single-phase transformers in the network which again save considerable energy. This paper is compared to existing conventional low tension distribution network with HVDS. The paper gives a clear picture of reduction in distribution losses with adoption of HVDS system. Losses Reduction of 11 kV Feeder in Nuniya (India) with adoption of HVDS have been worked out/ quantified and benefits thereby in generating capacity have discussed.

  15. Fiber optic current monitor for high-voltage applications

    DOEpatents

    Renda, G.F.

    1992-04-21

    A current monitor which derives its power from the conductor being measured for bidirectionally measuring the magnitude of current (from DC to above 50 khz) flowing through a conductor across which a relatively high level DC voltage is applied, includes a pair of identical transmitter modules connected in opposite polarity to one another in series with the conductor being monitored, for producing from one module a first light signal having an intensity directly proportional to the magnitude of current flowing in one direction through the conductor during one period of time, and from the other module a second light signal having an intensity directly proportional to the magnitude of current flowing in the opposite direction through the conductor during another period of time, and a receiver located in a safe area remote from the high voltage area for receiving the first and second light signals, and converting the same to first and second voltage signals having levels indicative of the magnitude of current being measured at a given time. 6 figs.

  16. Fiber optic current monitor for high-voltage applications

    DOEpatents

    Renda, George F.

    1992-01-01

    A current monitor which derives its power from the conductor being measured for bidirectionally measuring the magnitude of current (from DC to above 50 khz) flowing through a conductor across which a relatively high level DC voltage is applied, includes a pair of identical transmitter modules connected in opposite polarity to one another in series with the conductor being monitored, for producing from one module a first light signal having an intensity directly proportional to the magnitude of current flowing in one direction through the conductor during one period of time, and from the other module a second light signal having an intensity directly proportional to the magnitude of current flowing in the opposite direction through the conductor during another period of time, and a receiver located in a safe area remote from the high voltage area for receiving the first and second light signals, and converting the same to first and second voltage signals having levels indicative of the magnitude of current being measured at a given time.

  17. Reduction of Electric Breakdown Voltage in LC Switching Shutters / Elektriskās Caursites Sprieguma Samazināšana Šķidro Kristālu Šūnās

    NASA Astrophysics Data System (ADS)

    Mozolevskis, G.; Ozols, A.; Nitiss, E.; Linina, E.; Tokmakov, A.; Rutkis, M.

    2015-10-01

    Liquid crystal display (LCD) industry is among the most rapidly growing and innovating industries in the world. Here continuously much effort is devoted towards developing and implementing new types of LCDs for various applications. Some types of LCDs require relatively high voltages for their operation. For example, bistable displays, in which an altering field at different frequencies is used for switching from clear to scattering states and vice versa, require electric fields at around 10 V/μm for operation. When operated at such high voltages an electrical breakdown is very likely to occur in the liquid crystal (LC) cell. This has been one of the limiting factors for such displays to reach market. In the present paper, we will report on the results of electrical breakdown investigations in high-voltage LC cells. An electrical breakdown in the cell is observed when current in the liquid crystal layer is above a specific threshold value. The threshold current is determined by conductivity of the liquid crystal as well as point defects, such as dust particles in LC layer, pinholes in coatings and electrode hillocks. In order to reduce the currents flowing through the liquid crystal layer several approaches, such as electrode patterning and adding of various buffer layers in the series with LC layer, have been tested. We demonstrate that the breakdown voltages can be significantly improved by means of adding insulating thin films. Šķidro kristālu ekrānu (LCD) industrija ir viena no visstraujāk augošajām industrijām pasaulē. Daudz pūļu un resursu tiek veltīti jauna tipa LCD izstrādē dažādiem pielietojumiem. Atsevišķa tipa LCD funkcionēšanai nepieciešami augsti spriegumi. Piemēram, bistabilos LCD, kuros izkliedējošs (ieslēgts) un dzidrs (izslēgts) stāvoklis tiek iegūts ar dažādu frekvenču maiņsprieguma palīdzību, elektriskā lauka intensitāte šķidrā kristāla slānī var sasniegt pat 10 V/μm. Augstās elektriskā lauka intensit

  18. High voltage design structure for high temperature superconducting device

    DOEpatents

    Tekletsadik, Kasegn D.

    2008-05-20

    In accordance with the present invention, modular corona shields are employed in a HTS device to reduce the electric field surrounding the HTS device. In a exemplary embodiment a fault current limiter module in the insulation region of a cryogenic cooling system has at least one fault current limiter set which employs a first corona shield disposed along the top portion of the fault current limiter set and is electrically coupled to the fault current limiter set. A second corona shield is disposed along the bottom portion of the fault current limiter set and is electrically coupled to the fault current limiter set. An insulation barrier is disposed within the insulation region along at least one side of the fault current limiter set. The first corona shield and the second corona shield act together to reduce the electric field surrounding the fault limiter set when voltage is applied to the fault limiter set.

  19. Switch contact device for interrupting high current, high voltage, AC and DC circuits

    DOEpatents

    Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

    2005-01-04

    A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

  20. A magnesium-sodium hybrid battery with high operating voltage.

    PubMed

    Dong, Hui; Li, Yifei; Liang, Yanliang; Li, Guosheng; Sun, Cheng-Jun; Ren, Yang; Lu, Yuhao; Yao, Yan

    2016-07-01

    We report a high performance magnesium-sodium hybrid battery utilizing a magnesium-sodium dual-salt electrolyte, a magnesium anode, and a Berlin green cathode. The cell delivers an average discharge voltage of 2.2 V and a reversible capacity of 143 mA h g(-1). We also demonstrate the cell with an energy density of 135 W h kg(-1) and a high power density of up to 1.67 kW kg(-1). PMID:27284593

  1. Experimental validation of a high voltage pulse measurement method.

    SciTech Connect

    Cular, Stefan; Patel, Nishant Bhupendra; Branch, Darren W.

    2013-09-01

    This report describes X-cut lithium niobate's (LiNbO3) utilization for voltage sensing by monitoring the acoustic wave propagation changes through LiNbO3 resulting from applied voltage. Direct current (DC), alternating current (AC) and pulsed voltage signals were applied to the crystal. Voltage induced shift in acoustic wave propagation time scaled quadratically for DC and AC voltages and linearly for pulsed voltages. The measured values ranged from 10 - 273 ps and 189 ps - 2 ns for DC and non-DC voltages, respectively. Data suggests LiNbO3 has a frequency sensitive response to voltage. If voltage source error is eliminated through physical modeling from the uncertainty budget, the sensor's U95 estimated combined uncertainty could decrease to ~0.025% for DC, AC, and pulsed voltage measurements.

  2. From Organized High-Throughput Data to Phenomenological Theory using Machine Learning: The Example of Dielectric Breakdown

    DOE PAGESBeta

    Kim, Chiho; Pilania, Ghanshyam; Ramprasad, Ramamurthy

    2016-02-02

    Understanding the behavior (and failure) of dielectric insulators experiencing extreme electric fields is critical to the operation of present and emerging electrical and electronic devices. Despite its importance, the development of a predictive theory of dielectric breakdown has remained a challenge, owing to the complex multiscale nature of this process. We focus on the intrinsic dielectric breakdown field of insulators—the theoretical limit of breakdown determined purely by the chemistry of the material, i.e., the elements the material is composed of, the atomic-level structure, and the bonding. Starting from a benchmark dataset (generated from laborious first principles computations) of the intrinsicmore » dielectric breakdown field of a variety of model insulators, simple predictive phenomenological models of dielectric breakdown are distilled using advanced statistical or machine learning schemes, revealing key correlations and analytical relationships between the breakdown field and easily accessible material properties. Lastly, the models are shown to be general, and can hence guide the screening and systematic identification of high electric field tolerant materials.« less

  3. High voltage-power frequency electrical heating in-situ conversion technology of oil shale

    NASA Astrophysics Data System (ADS)

    Sun, Youhong; Yang, Yang; Lopatin, Vladimir; Guo, Wei; Liu, Baochang; Yu, Ping; Gao, Ke; Ma, Yinlong

    2014-05-01

    With the depletion of conventional energy sources,oil shale has got much attention as a new type of energy resource,which is rich and widespread in the world.The conventional utilization of oil shale is mainly focused on resorting to produce shale oil and fuel gas with low extraction efficiency about one in a million due to many shortcomings and limitations.And the in-situ conversion of oil shale,more environmentally friendly,is still in the experimental stage.High voltage-power frequency electrical heating in-situ conversion of oil shale is a new type of in-situ pyrolysis technology.The main equipment includes a high voltage-power frequency generator and interior reactor. The high voltage-power frequency generator can provide a voltage between 220-8000 V which can be adjusted in real time according to the actual situation.Firstly,high voltage is used to breakdown the oil shale to form a dendritic crack between two electrodes providing a conductive channel inside the oil shale rock.And then the power frequency(220V) is used to generate the electric current for heating the internal surface of conductive channel,so that the energy can be transmitted to the surrounding oil shale.When the temperature reaches 350 degree,the oil shale begins to pyrolysis.In addition,the temperature in the conductive channel can be extremely high with high voltage,which makes the internal surface of conductive channel graphitization and improves its heat conduction performance.This technology can successfully make the oil shale pyrolysis, based on a lot of lab experiments,and also produce the combustible shale oil and fuel gas.Compared to other in-situ conversion technology,this method has the following advantages: high speed of heating oil shale,the equipment underground is simple,and easy to operate;it can proceed without the limitation of shale thickness, and can be used especially in the thin oil shale reservoir;the heating channel is parallel to the oil shale layers,which has more

  4. Impact of Solar Array Designs on High Voltage Operations

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr.; Ferguson, Dale; Piszczor, Mike; ONeill, Mark

    2006-01-01

    As power levels of advanced spacecraft climb above 25 kW, higher solar array operating voltages become attractive. Even in today s satellites, operating spacecraft buses at 100 V and above has led to arcing in GEO communications satellites, so the issue of spacecraft charging and solar array arcing remains a design problem. In addition, micrometeoroid impacts on all of these arrays can also lead to arcing if the spacecraft is at an elevated potential. For example, tests on space station hardware disclosed arcing at 75V on anodized A1 structures that were struck with hypervelocity particles in Low Earth Orbit (LEO) plasmas. Thus an understanding of these effects is necessary to design reliable high voltage solar arrays of the future, especially in light of the Vision for Space Exploration of NASA. In the future, large GEO communication satellites, lunar bases, solar electric propulsion missions, high power communication systems around Mars can lead to power levels well above 100 kW. As noted above, it will be essential to increase operating voltages of the solar arrays well above 80 V to keep the mass of cabling needed to carry the high currents to an acceptable level. Thus, the purpose of this paper is to discuss various solar array approaches, to discuss the results of testing them at high voltages, in the presence of simulated space plasma and under hypervelocity impact. Three different types of arrays will be considered. One will be a planar array using thin film cells, the second will use planar single or multijunction cells and the last will use the Stretched Lens Array (SLA - 8-fold concentration). Each of these has different approaches for protection from the space environment. The thin film cell based arrays have minimal covering due to their inherent radiation tolerance, conventional GaAs and multijunction cells have the traditional cerium-doped microsheet glasses (of appropriate thickness) that are usually attached with Dow Corning DC 93-500 silicone

  5. 76 FR 72203 - Voltage Coordination on High Voltage Grids; Notice of Reliability Workshop Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-22

    ... analysis evaluations are performed on the bulk electric system or on lower voltage systems to maximize... how these software products are evaluated and validated using a post analysis process. d. What effort... or tools are used to evaluate reactive or voltage support needs from this perspective? b....

  6. Determination of threshold and maximum operating electric stresses for selected high voltage insulations: Investigation of aged polymeric dielectric cable. Final report

    SciTech Connect

    Eager, G.S. Jr.; Seman, G.W.; Fryszczyn, B.

    1995-11-01

    Based on the successful completion of the extensive research project DOE/ET/29303-1 February 1982 to develop a new method for the determination of threshold voltage in XLPE and EPR insulated cables, tests were initiated to establish the maximum safe operating voltage stresses of crosslinked polyethylene insulated cables that become wet when they operate in a moist environment. The present report covers the measurement of the threshold voltage, the a.c. breakdown voltage and the impulse breakdown voltage of XLPE cable after undergoing accelerated laboratory aging in water. Model and 15 kV XLPE cables were manufactured in commercial equipment using state-of-the-art semiconducting shields and XLPE insulation. The threshold voltage, a.c. voltage breakdown and impulse voltage breakdown of the model cables were determined before aging, after aging one week and after aging 26 weeks. The model cable, following 26 weeks aging, was dried by passing dry gas through the conductor interstices which removed moisture from the cable. The threshold voltage, the a.c. voltage breakdown and the impulse voltage breakdown of the XLPE model cable after drying was measured.

  7. A study of dielectric breakdown along insulators surrounding conductors in liquid argon

    DOE PAGESBeta

    Lockwitz, Sarah; Jostlein, Hans

    2016-03-22

    High voltage breakdown in liquid argon is an important concern in the design of liquid argon time projection chambers, which are often used as neutrino and dark matter detectors. We have made systematic measurements of breakdown voltages in liquid argon along insulators surrounding negative rod electrodes where the breakdown is initiated at the anode. The measurements were performed in an open cryostat filled with commercial grade liquid argon exposed to air, and not the ultra-pure argon required for electron drift. While not addressing all high voltage concerns in liquid argon, these measurements have direct relevance to the design of highmore » voltage feedthroughs especially for averting the common problem of flash-over breakdown. The purpose of these tests is to understand the effects of materials, of breakdown path length, and of surface topology for this geometry and setup. We have found that the only material-specific effects are those due to their permittivity. We have found that the breakdown voltage has no dependence on the length of the exposed insulator. Lastly, a model for the breakdown mechanism is presented that can help inform future designs.« less

  8. High-frequency voltage oscillations in cultured astrocytes

    PubMed Central

    Fleischer, Wiebke; Theiss, Stephan; Slotta, Johannes; Holland, Christine; Schnitzler, Alfons

    2015-01-01

    Because of their close interaction with neuronal physiology, astrocytes can modulate brain function in multiple ways. Here, we demonstrate a yet unknown astrocytic phenomenon: Astrocytes cultured on microelectrode arrays (MEAs) exhibited extracellular voltage fluctuations in a broad frequency spectrum (100–600 Hz) after electrical stimulation. These aperiodic high-frequency oscillations (HFOs) could last several seconds and did not spread across the MEA. The voltage-gated calcium channel antagonist cilnidipine dose-dependently decreased the power of the oscillations. While intracellular calcium was pivotal, incubation with bafilomycin A1 showed that vesicular release of transmitters played only a minor role in the emergence of HFOs. Gap junctions and volume-regulated anionic channels had just as little functional impact, which was demonstrated by the addition of carbenoxolone (100 μmol/L) and NPPB (100 μmol/L). Hyperpolarization with low potassium in the extracellular solution (2 mmol/L) dramatically raised oscillation power. A similar effect was seen when we added extra sodium (+50 mmol/L) or if we replaced it with NMDG+ (50 mmol/L). The purinergic receptor antagonist PPADS suppressed the oscillation power, while the agonist ATP (100 μmol/L) had only an increasing effect when the bath solution pH was slightly lowered to pH 7.2. From these observations, we conclude that astrocytic voltage oscillations are triggered by activation of voltage-gated calcium channels and driven by a downstream influx of cations through channels that are permeable for large ions such as NMDG+. Most likely candidates are subtypes of pore-forming P2X channels with a low affinity for ATP. PMID:25969464

  9. High-voltage power supply with improved thermostability for Xenon gamma-ray spectrometer

    NASA Astrophysics Data System (ADS)

    Petrenko, D.; Uteshev, Z.; Novikov, A.; Shustov, A.; Vlasik, K.; Chernysheva, I.; Smirnova, M.; Krivova, K.; Dmitrenko, V.; Ulin, S.

    2016-02-01

    In this article the high voltage power supply for xenon spectrometer is described. Result of time simulation for output voltage at different temperatures was shown. The experimental data is confirming results of the time simulations. The experimental data showed breadboard model provides a stability of voltage better than 1% of the generated voltage at different temperatures

  10. DEMONSTRATION BULLETIN: HIGH VOLTAGE ELECTRON BEAM TECHNOLOGY - HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.

    EPA Science Inventory

    The high energy electron beam irradiation technology is a low temperature method for destroying complex mixtures of hazardous organic chemicals in solutions containing solids. The system consists of a computer-automated, portable electron beam accelerator and a delivery system. T...

  11. Curing system for high voltage cross linked cables

    DOEpatents

    Bahder, George; Katz, Carlos; Bopp, Louis A.

    1978-01-01

    This invention makes extruded, vulcanized, high voltage cables insulated with thermosetting compounds at much higher rates of production and with superior insulation of reduced thickness and with reduced cavities or voids in the insulation. As the cable comes from an extruder, it passes into a curing chamber with a heat booster that quickly raises the insulation to a temperature at which it is cured much more quickly than with steam heating of the prior art. A high temperature liquid in contact with the insulation maintains the high temperature; and because of the greater curing heat, the cable can travel through the curing chamber at a faster rate and into a cooling tube where it contacts with a cooling liquid under high pressure. The insulation compound is treated to reduce the size of cavities; and the high pressure maintained by the curing and cooling mediums prevent expansion of cavities before the insulation is set.

  12. High Power, High Voltage FETs in Linear Applications: A User's Perspective

    SciTech Connect

    N. Greenough, E. Fredd, S. DePasquale

    2009-09-21

    The specifications of the current crop of highpower, high-voltage field-effect transistors (FETs) can lure a designer into employing them in high-voltage DC equipment. Devices with extremely low on-resistance and very high power ratings are available from several manufacturers. However, our experience shows that high-voltage, linear operation of these devices at near-continuous duty can present difficult reliability challenges at stress levels well-below their published specifications. This paper chronicles the design evolution of a 600 volt, 8 ampere shunt regulator for use with megawatt-class radio transmitters, and presents a final design that has met its reliability criteria.

  13. Ion Solid Interaction And Surface Modification At RF Breakdown In High-Gradient Linacs

    NASA Astrophysics Data System (ADS)

    Insepov, Zeke; Norem, Jim; Veitzer, Seth

    2011-06-01

    Ion solid interactions have been shown to be an important new mechanism of unipolar arc formation in high-gradient rf linear accelerators through surface self-sputtering by plasma ions, in addition to an intense surface field evaporation. We believe a non-Debye plasma is formed in close vicinity to the surface and strongly affects surface atomic migration via intense bombardment by ions, strong electric field, and high surface temperature. Scanning electron microscope studies of copper surface of an rf cavity were conducted that show craters, arc pits, and both irregular and regular ripple structures with a characteristic length of 2 microns on the surface. Strong field enhancements are characteristic of the edges, corners, and crack systems at surfaces subjected to rf breakdown.

  14. Self-monitoring high voltage transmission line suspension insulator

    DOEpatents

    Stemler, Gary E.; Scott, Donald N.

    1981-01-01

    A high voltage transmission line suspension insulator (18 or 22) which monitors its own dielectric integrity. A dielectric rod (10) has one larger diameter end fitting attachable to a transmission line and another larger diameter end fitting attachable to a support tower. The rod is enclosed in a dielectric tube (14) which is hermetically sealed to the rod's end fittings such that a liquidtight space (20) is formed between the rod and the tube. A pressurized dielectric liquid is placed within that space. A discoloring dye placed within this space is used to detect the loss of the pressurized liquid.

  15. Hazard classification assessment for the High Voltage Initiator

    SciTech Connect

    Cogan, J.D.

    1994-04-19

    An investigation was conducted to determine whether the High Voltage Initiator (Sandia p number 395710; Navy NAVSEA No. 6237177) could be assigned a Department of Transportation (DOT) hazard classification of ``IGNITERS, 1.4G, UN0325`` under Code of Federal Regulations, 49 CFR 173.101, when packaged per Mound drawing NXB911442. A hazard classification test was performed, and the test data led to a recommended hazard classification of ``IGNITERS, 1.4G, UN0325,`` based on guidance outlined in DOE Order 1540.2 and 49 CFR 173.56.

  16. Reproductive hazards among workers at high voltage substations

    SciTech Connect

    Nordstroem, S.; Birke, E.; Gustavsson, L.

    1983-01-01

    A retrospective study on reproductive hazards was performed among 542 employees at Swedish power plants. Questionnaires were answered by 89% of the employees. Data on pregnancies were checked by studying hospital case records. There was a statistically significant, decreased frequency of ''normal'' pregnancy outcome, almost exclusively due to an increased frequency of congenital malformations, when the father was a high-voltage switchyard worker. The differences in pregnancy outcome could not be explained by any of the confounding factors analyzed. The total number of children with malformations (26) and the total number of pregnancies in this study, however, were very small.

  17. High-voltage R-F feedthrough bushing

    DOEpatents

    Grotz, G.F.

    1982-09-03

    Described is a multi-element, high voltage radio frequency bushing for transmitting rf energy to an antenna located in a vacuum container. The bushing includes a center conductor of complex geometrical shape, an outer coaxial shield conductor, and a thin-walled hollow truncated cone insulator disposed between central and outer conductors. The shape of the center conductor, which includes a reverse curvature portion formed of a radially inwardly directed shoulder and a convex portion, controls the uniformity of the axial surface gradient on the insulator cone. The outer shield has a first substantially cylindrical portion and a second radially inwardly extending truncated cone portion.

  18. Preliminary chaotic model of snapover on high voltage solar cells

    NASA Technical Reports Server (NTRS)

    Mackey, Willie R.

    1995-01-01

    High voltage power systems in space will interact with the space plasma in a variety of ways. One of these, snapover, is characterized by sudden enlargement of the current collection area across normally insulating surfaces generating enhanced electron current collection. Power drain on solar array power systems results from this enhanced current collection. Optical observations of the snapover phenomena in the laboratory indicates a functional relation between glow area and bia potential as a consequence of the fold/cusp bifurcation in chaos theory. Successful characterizations of snapover as a chaotic phenomena may provide a means of snapover prevention and control through chaotic synchronization.

  19. Development of Isolated Travel Sensor for High-voltage Switchgear

    NASA Astrophysics Data System (ADS)

    Shiratsuki, Akihide; Mori, Tomohito; Kohyama, Haruhiko; Nakajima, Hajime; Nakashima, Toshiro; Oka, Toru; Sumi, Kazuhiko

    Because a contact travel can show a trend of operating condition of high voltage switchgears, it is utilized as an important parameter for not only monitoring or diagnostic system but also intelligent controls such as controlled switching systems to eliminate harmful switching transients. Potential meters or encoders are usually applied for this purpose, but it requires modification of moving parts that is not acceptable in some types of switchgears especially for retrofit work in fields. This paper describes a development of a compact and isolated type travel sensor, which can be easily installed in switchgear cabinets, and evaluation test results using prototype mounted in actual switchgear.

  20. High impedance fault detection in low voltage networks

    SciTech Connect

    Christie, R.D. . Dept. of Electrical Engineering); Zadehgol, H.; Habib, M.M. )

    1993-10-01

    High impedance faults are those with fault current magnitude similar to load currents. Experimental results were obtained that conform operating experience that such faults can occur in the low voltage (600V and below) underground distribution networks typically found in urban power systems. These faults produce current waveforms qualitatively similar to those found on overhead feeders, but quantitatively smaller. Loose connectors can produce similar, but cleaner current characteristics. Noisy loads remain a major impediment to reliable detection. Design and installation of an inexpensive prototype fault detector on the Seattle City Light street network is described.

  1. An accurate continuous calibration system for high voltage current transformer

    SciTech Connect

    Tong Yue; Li Binhong

    2011-02-15

    A continuous calibration system for high voltage current transformers is presented in this paper. The sensor of this system is based on a kind of electronic instrument current transformer, which is a clamp-shape air core coil. This system uses an optical fiber transmission system for its signal transmission and power supply. Finally the digital integrator and fourth-order convolution window algorithm as error calculation methods are realized by the virtual instrument with a personal computer. It is found that this system can calibrate a high voltage current transformer while energized, which means avoiding a long calibrating period in the power system and the loss of power metering expense. At the same time, it has a wide dynamic range and frequency band, and it can achieve a high accuracy measurement in a complex electromagnetic field environment. The experimental results and the on-site operation results presented in the last part of the paper, prove that it can reach the 0.05 accuracy class and is easy to operate on site.

  2. An accurate continuous calibration system for high voltage current transformer.

    PubMed

    Tong, Yue; Li, Bin Hong

    2011-02-01

    A continuous calibration system for high voltage current transformers is presented in this paper. The sensor of this system is based on a kind of electronic instrument current transformer, which is a clamp-shape air core coil. This system uses an optical fiber transmission system for its signal transmission and power supply. Finally the digital integrator and fourth-order convolution window algorithm as error calculation methods are realized by the virtual instrument with a personal computer. It is found that this system can calibrate a high voltage current transformer while energized, which means avoiding a long calibrating period in the power system and the loss of power metering expense. At the same time, it has a wide dynamic range and frequency band, and it can achieve a high accuracy measurement in a complex electromagnetic field environment. The experimental results and the on-site operation results presented in the last part of the paper, prove that it can reach the 0.05 accuracy class and is easy to operate on site. PMID:21361633

  3. Radiation damage in high voltage silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Brandhorst, H., Jr.; Swartz, C. K.; Weizer, V. G.

    1980-01-01

    Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

  4. 30 CFR 75.802 - Protection of high-voltage circuits extending underground.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... portable, mobile, or, stationary high-voltage equipment shall contain either a direct or derived neutral... authorized representative may permit ungrounded high-voltage circuits to be extended underground to...

  5. 30 CFR 75.802 - Protection of high-voltage circuits extending underground.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... portable, mobile, or, stationary high-voltage equipment shall contain either a direct or derived neutral... authorized representative may permit ungrounded high-voltage circuits to be extended underground to...

  6. 30 CFR 75.802 - Protection of high-voltage circuits extending underground.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... portable, mobile, or, stationary high-voltage equipment shall contain either a direct or derived neutral... authorized representative may permit ungrounded high-voltage circuits to be extended underground to...

  7. 30 CFR 75.802 - Protection of high-voltage circuits extending underground.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... portable, mobile, or, stationary high-voltage equipment shall contain either a direct or derived neutral... authorized representative may permit ungrounded high-voltage circuits to be extended underground to...

  8. 30 CFR 75.802 - Protection of high-voltage circuits extending underground.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... portable, mobile, or, stationary high-voltage equipment shall contain either a direct or derived neutral... authorized representative may permit ungrounded high-voltage circuits to be extended underground to...

  9. Breakdown in the pretext tokamak

    SciTech Connect

    Benesch, J.F.

    1981-06-01

    Data are presented on the application of ion cyclotron resonance RF power to preionization in tokamaks. We applied 0.3-3 kW at 12 MHz to hydrogen and obtained a visible discharge, but found no scaling of breakdown voltage with any parameter we were able to vary. A possible explanation for this, which implies that higher RF power would have been much more effective, is discussed. Finally, we present our investigation of the dV/dt dependence of breakdown voltage in PRETEXT, a phenomenon also seen in JFT-2. The breakdown is discussed in terms of the physics of Townsend discharges.

  10. Magnetic shielding of Hall thrusters at high discharge voltages

    SciTech Connect

    Mikellides, Ioannis G. Hofer, Richard R.; Katz, Ira; Goebel, Dan M.

    2014-08-07

    A series of numerical simulations and experiments have been performed to assess the effectiveness of magnetic shielding in a Hall thruster operating in the discharge voltage range of 300–700 V (I{sub sp} ≈ 2000–2700 s) at 6 kW, and 800 V (I{sub sp} ≈ 3000) at 9 kW. At 6 kW, the magnetic field topology with which highly effective magnetic shielding was previously demonstrated at 300 V has been retained for all other discharge voltages; only the magnitude of the field has been changed to achieve optimum thruster performance. It is found that magnetic shielding remains highly effective for all discharge voltages studied. This is because the channel is long enough to allow hot electrons near the channel exit to cool significantly upon reaching the anode. Thus, despite the rise of the maximum electron temperature in the channel with discharge voltage, the electrons along the grazing lines of force remain cold enough to eliminate or reduce significantly parallel gradients of the plasma potential near the walls. Computed maximum erosion rates in the range of 300–700 V are found not to exceed 10{sup −2} mm/kh. Such rates are ∼3 orders of magnitude less than those observed in the unshielded version of the same thruster at 300 V. At 9 kW and 800 V, saturation of the magnetic circuit did not allow for precisely the same magnetic shielding topology as that employed during the 6-kW operation since this thruster was not designed to operate at this condition. Consequently, the maximum erosion rate at the inner wall is found to be ∼1 order of magnitude higher (∼10{sup −1} mm/kh) than that at 6 kW. At the outer wall, the ion energy is found to be below the sputtering yield threshold so no measurable erosion is expected.

  11. Test results of high-voltage, high-power, solid-state remote power controllers

    NASA Technical Reports Server (NTRS)

    Johnson, Yvette Binford; Kapustka, Robert E.

    1988-01-01

    This report discusses the results of testing high-voltage, high-power, solid-state remote power controllers (RPC) using RPCs designed and built by John C. Sturman at the Lewis Research Center, Cleveland, Ohio, and utilizing the Autonomously Managed Power Systems (AMPS) breadboard/test facility. These test results are used to determine usefulness of the RPCs for future applications in high-voltage direct-current space power.

  12. Spectrographic temperature measurement of a high power breakdown arc in a high pressure gas switch.

    PubMed

    Yeckel, Christopher; Curry, Randy

    2011-09-01

    A procedure for obtaining an approximate temperature value of conducting plasma generated during self-break closure of a RIMFIRE gas switch is described. The plasma is in the form of a breakdown arc which conducts approximately 12 kJ of energy in 1 μs. A spectrographic analysis of the trigger-section of the 6-MV RIMFIRE laser triggered gas switch used in Sandia National Laboratory's "Z-Machine" has been made. It is assumed that the breakdown plasma has sufficiently approached local thermodynamic equilibrium allowing a black-body temperature model to be applied. This model allows the plasma temperature and radiated power to be approximated. The gas dielectric used in these tests was pressurized SF(6). The electrode gap is set at 4.59 cm for each test. The electrode material is stainless steel and insulator material is poly(methyl methacrylate). A spectrum range from 220 to 550 nanometers has been observed and calibrated using two spectral irradiance lamps and three spectrograph gratings. The approximate plasma temperature is reported. PMID:21974578

  13. Spectrographic temperature measurement of a high power breakdown arc in a high pressure gas switch

    SciTech Connect

    Yeckel, Christopher; Curry, Randy

    2011-09-15

    A procedure for obtaining an approximate temperature value of conducting plasma generated during self-break closure of a RIMFIRE gas switch is described. The plasma is in the form of a breakdown arc which conducts approximately 12 kJ of energy in 1 {mu}s. A spectrographic analysis of the trigger-section of the 6-MV RIMFIRE laser triggered gas switch used in Sandia National Laboratory's ''Z-Machine'' has been made. It is assumed that the breakdown plasma has sufficiently approached local thermodynamic equilibrium allowing a black-body temperature model to be applied. This model allows the plasma temperature and radiated power to be approximated. The gas dielectric used in these tests was pressurized SF{sub 6}. The electrode gap is set at 4.59 cm for each test. The electrode material is stainless steel and insulator material is poly(methyl methacrylate). A spectrum range from 220 to 550 nanometers has been observed and calibrated using two spectral irradiance lamps and three spectrograph gratings. The approximate plasma temperature is reported.

  14. Research of position measuring system for high voltage switchgear

    NASA Astrophysics Data System (ADS)

    Ji, Yilin; Qian, Zheng; Pan, Kaikai

    2016-01-01

    The contact position's accurate measurement is the key part of the realization of high voltage switchgear's on-line monitoring. Based on the position measurement, the speed and trip of the switchgear could also be obtained. Thus, the health level and the operation status can be evaluated. The insulation condition and the fault symptom can also be identified. In this paper, the on-line measuring principle for the contact position is presented at first. The indirect measuring method is adopted, and the incremental photoelectric encoder is utilized to realize the measurement of angular displacement. The position could be calculated by establishing the relationship between the angular displacement and the contact's linear displacement. After that, the technical difficulties of the on-line measuring system are demonstrated. The selection of encoder, the difficult parts of hardware design and software design are all discussed deeply. The lab test of the whole measuring system is processed at last, and the measuring results are satisfactory. It will provide powerful support for the realization of on-line monitoring equipment of the high voltage switchgear.

  15. An Ultra-Compact Marx-Type High-Voltage Generator

    SciTech Connect

    Goerz, D; Ferriera, T; Nelson, D; Speer, R; Wilson, M

    2001-06-15

    This paper discusses the design of an ultra-compact, Marx-type, high-voltage generator. This system incorporates high-performance components that are closely coupled and integrated into an extremely compact assembly. Low profile, custom ceramic capacitors with coplanar extended electrodes provide primary energy storage. Low-inductance, spark-gap switches incorporate miniature gas cavities imbedded within the central region of the annular shaped capacitors, with very thin dielectric sections separating the energy storage capacitors. Carefully shaped electrodes and insulator surfaces are used throughout to minimize field enhancements, reduce fields at triple-point regions, and enable operation at stress levels closer to the intrinsic breakdown limits of the dielectric materials. Specially shaped resistors and inductors are used for charging and isolation during operation. Forward-coupling ceramic capacitors are connected across successive switch-capacitor-switch stages to assist in switching. Pressurized SF, gas is used for electrical insulation in the spark-gap switches and throughout the unit. The pressure housing is constructed entirely of dielectric materials, with segments that interlock with the low-profile switch bodies to provide an integrated support structure for all of the components. This ultra-compact Marx generator employs a modular design that can be sized as needed for a particular application. Units have been assembled with 4, 10, and 30 stages and operated at levels up to 100 kV per stage.

  16. 30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; minimum design... LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS, SURFACE COAL MINES AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing...

  17. 30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false High-voltage trailing cables; minimum design... LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS, SURFACE COAL MINES AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing...

  18. 30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage trailing cables; minimum design... LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS, SURFACE COAL MINES AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing...

  19. 30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage trailing cables; minimum design... LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS, SURFACE COAL MINES AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing...

  20. 30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. No electrical work shall be performed on low-, medium-, or high-voltage distribution circuits...

  1. 30 CFR 75.810 - High-voltage trailing cables; splices.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage trailing cables; splices. 75.810... § 75.810 High-voltage trailing cables; splices. In the case of high-voltage cables used as trailing cables, temporary splices shall not be used and all permanent splices shall be made in accordance...

  2. 30 CFR 75.810 - High-voltage trailing cables; splices.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false High-voltage trailing cables; splices. 75.810... § 75.810 High-voltage trailing cables; splices. In the case of high-voltage cables used as trailing cables, temporary splices shall not be used and all permanent splices shall be made in accordance...

  3. 30 CFR 75.810 - High-voltage trailing cables; splices.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; splices. 75.810... § 75.810 High-voltage trailing cables; splices. In the case of high-voltage cables used as trailing cables, temporary splices shall not be used and all permanent splices shall be made in accordance...

  4. 30 CFR 75.810 - High-voltage trailing cables; splices.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage trailing cables; splices. 75.810... § 75.810 High-voltage trailing cables; splices. In the case of high-voltage cables used as trailing cables, temporary splices shall not be used and all permanent splices shall be made in accordance...

  5. 30 CFR 75.812 - Movement of high-voltage power centers and portable transformers; permit.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Movement of high-voltage power centers and... Underground High-Voltage Distribution § 75.812 Movement of high-voltage power centers and portable transformers; permit. Power centers and portable transformers shall be deenergized before they are moved...

  6. 30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of...

  7. 30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of...

  8. 30 CFR 75.812 - Movement of high-voltage power centers and portable transformers; permit.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Movement of high-voltage power centers and... Underground High-Voltage Distribution § 75.812 Movement of high-voltage power centers and portable transformers; permit. Power centers and portable transformers shall be deenergized before they are moved...

  9. 30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of...

  10. 30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of...

  11. 30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of...

  12. 30 CFR 75.812 - Movement of high-voltage power centers and portable transformers; permit.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Movement of high-voltage power centers and... Underground High-Voltage Distribution § 75.812 Movement of high-voltage power centers and portable transformers; permit. Power centers and portable transformers shall be deenergized before they are moved...

  13. 30 CFR 75.812 - Movement of high-voltage power centers and portable transformers; permit.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Movement of high-voltage power centers and... Underground High-Voltage Distribution § 75.812 Movement of high-voltage power centers and portable transformers; permit. Power centers and portable transformers shall be deenergized before they are moved...

  14. 30 CFR 75.812 - Movement of high-voltage power centers and portable transformers; permit.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Movement of high-voltage power centers and... Underground High-Voltage Distribution § 75.812 Movement of high-voltage power centers and portable transformers; permit. Power centers and portable transformers shall be deenergized before they are moved...

  15. 30 CFR 75.800 - High-voltage circuits; circuit breakers.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 75.800... § 75.800 High-voltage circuits; circuit breakers. High-voltage circuits entering the underground area of any coal mine shall be protected by suitable circuit breakers of adequate interrupting...

  16. 30 CFR 75.705-1 - Work on high-voltage lines.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Work on high-voltage lines. 75.705-1 Section 75... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Grounding § 75.705-1 Work on high-voltage lines. (a) Section 75.705 specifically prohibits work on energized high-voltage lines underground;...

  17. 30 CFR 77.704-1 - Work on high-voltage lines.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines. 77.704-1 Section 77... AND HEALTH MANDATORY SAFETY STANDARDS, SURFACE COAL MINES AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Grounding § 77.704-1 Work on high-voltage lines. (a) No high-voltage line shall be regarded...

  18. 30 CFR 75.705-1 - Work on high-voltage lines.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Work on high-voltage lines. 75.705-1 Section 75... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Grounding § 75.705-1 Work on high-voltage lines. (a) Section 75.705 specifically prohibits work on energized high-voltage lines underground;...

  19. 30 CFR 75.705-1 - Work on high-voltage lines.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines. 75.705-1 Section 75... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Grounding § 75.705-1 Work on high-voltage lines. (a) Section 75.705 specifically prohibits work on energized high-voltage lines underground;...

  20. 30 CFR 77.704-1 - Work on high-voltage lines.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Work on high-voltage lines. 77.704-1 Section 77... AND HEALTH MANDATORY SAFETY STANDARDS, SURFACE COAL MINES AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Grounding § 77.704-1 Work on high-voltage lines. (a) No high-voltage line shall be regarded...

  1. 30 CFR 77.704-1 - Work on high-voltage lines.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Work on high-voltage lines. 77.704-1 Section 77... AND HEALTH MANDATORY SAFETY STANDARDS, SURFACE COAL MINES AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Grounding § 77.704-1 Work on high-voltage lines. (a) No high-voltage line shall be regarded...

  2. 30 CFR 75.705-2 - Repairs to energized surface high-voltage lines.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized surface high-voltage lines... Repairs to energized surface high-voltage lines. An energized high-voltage surface line may be repaired... description of the nature and location of the damage or defect to be repaired; (2) The general plan to...

  3. 30 CFR 75.705-2 - Repairs to energized surface high-voltage lines.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Repairs to energized surface high-voltage lines... Repairs to energized surface high-voltage lines. An energized high-voltage surface line may be repaired... description of the nature and location of the damage or defect to be repaired; (2) The general plan to...

  4. 30 CFR 75.705-2 - Repairs to energized surface high-voltage lines.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Repairs to energized surface high-voltage lines... Repairs to energized surface high-voltage lines. An energized high-voltage surface line may be repaired... description of the nature and location of the damage or defect to be repaired; (2) The general plan to...

  5. 30 CFR 75.705-2 - Repairs to energized surface high-voltage lines.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Repairs to energized surface high-voltage lines... Repairs to energized surface high-voltage lines. An energized high-voltage surface line may be repaired... description of the nature and location of the damage or defect to be repaired; (2) The general plan to...

  6. 30 CFR 75.705-2 - Repairs to energized surface high-voltage lines.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Repairs to energized surface high-voltage lines... Repairs to energized surface high-voltage lines. An energized high-voltage surface line may be repaired... description of the nature and location of the damage or defect to be repaired; (2) The general plan to...

  7. 30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. No electrical work shall be performed on low-, medium-, or high-voltage distribution circuits...

  8. Compact high voltage, high peak power, high frequency transformer for converter type modulator applications.

    PubMed

    Reghu, T; Mandloi, V; Shrivastava, Purushottam

    2016-04-01

    The design and development of a compact high voltage, high peak power, high frequency transformer for a converter type modulator of klystron amplifiers is presented. The transformer has been designed to operate at a frequency of 20 kHz and at a flux swing of ±0.6 T. Iron (Fe) based nanocrystalline material has been selected as a core for the construction of the transformer. The transformer employs a specially designed solid Teflon bobbin having 120 kV insulation for winding the high voltage secondary windings. The flux swing of the core has been experimentally found by plotting the hysteresis loop at actual operating conditions. Based on the design, a prototype transformer has been built which is per se a unique combination of high voltage, high frequency, and peak power specifications. The transformer was able to provide 58 kV (pk-pk) at the secondary with a peak power handling capability of 700 kVA. The transformation ratio was 1:17. The performance of the transformer is also presented and discussed. PMID:27131709

  9. Compact high voltage, high peak power, high frequency transformer for converter type modulator applications

    NASA Astrophysics Data System (ADS)

    Reghu, T.; Mandloi, V.; Shrivastava, Purushottam

    2016-04-01

    The design and development of a compact high voltage, high peak power, high frequency transformer for a converter type modulator of klystron amplifiers is presented. The transformer has been designed to operate at a frequency of 20 kHz and at a flux swing of ±0.6 T. Iron (Fe) based nanocrystalline material has been selected as a core for the construction of the transformer. The transformer employs a specially designed solid Teflon bobbin having 120 kV insulation for winding the high voltage secondary windings. The flux swing of the core has been experimentally found by plotting the hysteresis loop at actual operating conditions. Based on the design, a prototype transformer has been built which is per se a unique combination of high voltage, high frequency, and peak power specifications. The transformer was able to provide 58 kV (pk-pk) at the secondary with a peak power handling capability of 700 kVA. The transformation ratio was 1:17. The performance of the transformer is also presented and discussed.

  10. Integration Test of the High Voltage Hall Accelerator System Components

    NASA Technical Reports Server (NTRS)

    Kamhawi, Hani; Haag, Thomas; Huang, Wensheng; Pinero, Luis; Peterson, Todd; Dankanich, John

    2013-01-01

    NASA Glenn Research Center is developing a 4 kilowatt-class Hall propulsion system for implementation in NASA science missions. NASA science mission performance analysis was completed using the latest high voltage Hall accelerator (HiVHAc) and Aerojet-Rocketdyne's state-of-the-art BPT-4000 Hall thruster performance curves. Mission analysis results indicated that the HiVHAc thruster out performs the BPT-4000 thruster for all but one of the missions studied. Tests of the HiVHAc system major components were performed. Performance evaluation of the HiVHAc thruster at NASA Glenn's vacuum facility 5 indicated that thruster performance was lower than performance levels attained during tests in vacuum facility 12 due to the lower background pressures attained during vacuum facility 5 tests when compared to vacuum facility 12. Voltage-Current characterization of the HiVHAc thruster in vacuum facility 5 showed that the HiVHAc thruster can operate stably for a wide range of anode flow rates for discharge voltages between 250 and 600 volts. A Colorado Power Electronics enhanced brassboard power processing unit was tested in vacuum for 1,500 hours and the unit demonstrated discharge module efficiency of 96.3% at 3.9 kilowatts and 650 volts. Stand-alone open and closed loop tests of a VACCO TRL 6 xenon flow control module were also performed. An integrated test of the HiVHAc thruster, brassboard power processing unit, and xenon flow control module was performed and confirmed that integrated operation of the HiVHAc system major components. Future plans include continuing the maturation of the HiVHAc system major components and the performance of a single-string integration test.

  11. Low Power, High Voltage Power Supply with Fast Rise/Fall Time

    NASA Technical Reports Server (NTRS)

    Bearden, Douglas B. (Inventor)

    2007-01-01

    A low power, high voltage power supply system includes a high voltage power supply stage and a preregulator for programming the power supply stage so as to produce an output voltage which is a predetermined fraction of a desired voltage level. The power supply stage includes a high voltage, voltage doubler stage connected to receive the output voltage from the preregulator and for, when activated, providing amplification of the output voltage to the desired voltage level. A first feedback loop is connected between the output of the preregulator and an input of the preregulator while a second feedback loop is connected between the output of the power supply stage and the input of the preregulator.

  12. Low power, high voltage power supply with fast rise/fall time

    NASA Technical Reports Server (NTRS)

    Bearden, Douglas B. (Inventor)

    2007-01-01

    A low power, high voltage power supply system includes a high voltage power supply stage and a preregulator for programming the power supply stage so as to produce an output voltage which is a predetermined fraction of a desired voltage level. The power supply stage includes a high voltage, voltage doubler stage connected to receive the output voltage from the preregulator and for, when activated, providing amplification of the output voltage to the desired voltage level. A first feedback loop is connected between the output of the preregulator and an input of the preregulator while a second feedback loop is connected between the output of the power supply stage and the input of the preregulator.

  13. A High Voltage Ratio and Low Ripple Interleaved DC-DC Converter for Fuel Cell Applications

    PubMed Central

    Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

    2012-01-01

    This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters. PMID:23365536

  14. A high voltage ratio and low ripple interleaved DC-DC converter for fuel cell applications.

    PubMed

    Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

    2012-01-01

    This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters. PMID:23365536

  15. Controlled electron emission and vacuum breakdown with nanosecond pulses

    NASA Astrophysics Data System (ADS)

    Seznec, B.; Dessante, Ph; Caillault, L.; Babigeon, J.-L.; Teste, Ph; Minea, T.

    2016-06-01

    Vacuum electron sources exploiting field emission are generally operated in direct current (DC) mode. The development of nanosecond and sub-nanosecond pulsed power supplies facilitates the emission of compact bunches of electrons of high density. The breakdown level is taken as the highest value of the voltage avoiding the thermo-emission instability. The effect of such ultra-fast pulses on the breakdown voltage and the emitted electron current is discussed as a result of the thermo-emission modelling applied to a significant protrusion. It is found that pulsing very rapidly the vacuum breakdown occurs at higher voltage values than for the DC case, because it rises faster than the heat diffusion. In addition, the electron emission current increases significantly regardless of the theoretical approach is used. A comparative study of this theoretical work is discussed for several different forms of the protrusion (elliptic and hyperbolic) and different metals (hence varying the melting point), particularly refractory (tungsten) versus conductor (titanium). Pulsed mode operation can provide an increase on breakdown voltage (up to 18%) and a significant increase (up to 330%) of the electron extracted current due to its high non-linear dependency with the voltage, for the case for the case with a hyperbolic protrusion.

  16. Propylene based systems for high voltage cable insulation applications

    NASA Astrophysics Data System (ADS)

    Hosier, I. L.; Cozzarini, L.; Vaughan, A. S.; Swingler, S. G.

    2009-08-01

    Crosslinked polyethylene (XLPE) remains the material of choice for extruded high voltage cables, possessing excellent thermo-mechanical and electrical properties. However, it is not easily recyclable posing questions as to its long term sustainability. Whilst both polyethylene and polypropylene are widely recycled and provide excellent dielectric properties, polypropylene has significantly better mechanical integrity at high temperatures than polyethylene. However, while isotactic polypropylene is too stiff at room temperature for incorporation into a cable system, previous studies by the authors have indicated that this limitation can be overcome by using a propylene-ethylene copolymer. Whilst these previous studies considered unrelated systems, the current study aims to quantify the usefulness of a series of related random propylene-ethylene co-polymers and assesses their potential for replacing XLPE.

  17. High-voltage scanning ion microscope: Beam optics and design

    NASA Astrophysics Data System (ADS)

    Magilin, D.; Ponomarev, A.; Rebrov, V.; Ponomarov, A.

    2015-05-01

    This article is devoted to the conceptual design of a compact high-voltage scanning ion microscope (HVSIM). In an HVSIM design, the ion optical system is based on a high-brightness ion source. Specifically, the ion optical system is divided into two components: an ion injector and a probe-forming system (PFS) that consists of an accelerating tube and a multiplet of quadrupole lenses. The crossover is formed and controlled by the injector, which acts as an object collimator, and is focused on the image plane by the PFS. The ion microprobe has a size of 0.1 μm and an energy of 2 MeV. When the influence of the chromatic and third-order aberrations is theoretically taken into account, the HVSIM forms an ion microprobe.

  18. A high voltage electrical burn of lung parenchyma.

    PubMed

    Masanès, M J; Gourbière, E; Prudent, J; Lioret, N; Febvre, M; Prévot, S; Lebeau, B

    2000-11-01

    High voltage electrical trauma may cause severe visceral injuries. We report a case of direct electrical injury to the lung parenchyma, without evidence of any thoracic wall contact injury, in an electrician who sustained a 20 kV-electrical shock while working in a substation cubicle. The diagnosis of a true electrical burn of the left lower lobe was suggested early on by imaging and then confirmed by surgical exploration, histological findings and the significant improvement of the patient's condition following resection of the infarcted lobe. All possible causes of bronchial and pulmonary pathologies in such a context were ruled out. The fatal outcome of two previous similar cases and the generally high mortality of any electrical visceral injury support early surgical management as the only rational life-saving treatment. Current pathophysiological knowledge substantiates the theory of an isolated visceral injury located far away from the contact wounds. However, the pathogenesis of such severe injuries is not entirely understood. PMID:10925192

  19. Investigation of the Transition from Local Anodic Oxidation to Electrical Breakdown During Nanoscale Atomic Force Microscopy Electric Lithography of Highly Oriented Pyrolytic Graphite.

    PubMed

    Yang, Ye; Lin, Jun

    2016-04-01

    As one of the tip-based top-down nanoscale machining methods, atomic force microscopy (AFM) electric lithography is capable of directly generating flexible nanostructures on conductive or semi-conductive sample surfaces. In this work, distinct fabrication mechanisms and mechanism transition from local anodic oxidation (LAO) to electrical breakdown (BD) in the AFM nanoscale electric lithography of the highly oriented pyrolytic graphite sample surface was studied. We provide direct evidence of the transition process mechanism through the detected current-voltage (I-V) curve. Characteristics of the fabrication results under the LAO, transition, and BD regions involving the oxide growth rate or material removal rate and AFM probe wear are analyzed in detail. These factors are of great significance for improving the machining controllability and expanding its potential applications. PMID:26847869

  20. Tailoring the dipole properties in dielectric polymers to realize high energy density with high breakdown strength and low dielectric loss

    SciTech Connect

    Thakur, Yash; Lin, Minren; Wu, Shan; Zhang, Q. M. E-mail: qxz1@psu.edu; Cheng, Zhaoxi; Jeong, D.-Y. E-mail: qxz1@psu.edu

    2015-03-21

    High energy density polymer materials are desirable for a broad range of modern power electronic systems. Here, we report the development of a new class of polymer dielectrics based on polyurea and polythiourea, which possess high thermal stability. By increasing the dipole density, the dielectric constant of meta-phenylene polyurea and methylene polythiourea can be increased to 5.7, compared with aromatic polyurea and aromatic polythiourea, which have a dielectric constant in the range of 4.1–4.3. The random dipoles with high dipolar moment and amorphous structure of these polyurea and polythiourea based polymers provide strong scattering to the charge carriers, resulting in low losses even at high electric fields. Consequently, this new class of polymers exhibit a linear dielectric response to the highest field measured (>700 MV/m) with a high breakdown strength, achieving high energy density (>13 J/cm{sup 3}) with high efficiency (>90%)