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Sample records for high dielectric constant

  1. New silicone dielectric elastomers with a high dielectric constant

    NASA Astrophysics Data System (ADS)

    Zhang, Zhen; Liu, Liwu; Fan, Jiumin; Yu, Kai; Liu, Yanju; Shi, Liang; Leng, Jinsong

    2008-03-01

    Dielectric elastomers (Des) are a type of EAPs with unique electrical properties and mechanical properties: high actuation strains and stresses, fast response times, high efficiency, stability, reliability and durability. The excellent figures of merit possessed by dielectric elastomers make them the most performing materials which can be applied in many domains: biomimetics, aerospace, mechanics, medicals, etc. In this paper, we present a kind of electroactive polymer composites based on silicone Dielectric elastomers with a high dielectric constant. Novel high DEs could be realized by means of a composite approach. By filling an ordinary elastomer (e.g. silicone) with a component of functional ceramic filler having a greater dielectric permittivity, it is possible to obtain a resulting composite showing the fruitful combination of the matrix's advantageous elasticity and the filler's high permittivity. Here we add the ferroelectric relaxor ceramics (mainly BaTiO3) which has high dielectric constant (>3000) to the conventional silicone Dielectric elastomers, to get the dielectric elastomer which can exhibit high elastic energy densities induced by an electric field of about 15 MV/m. Tests of the physical and chemical properties of the dielectric elastomers are conducted, which verify our supposes and offer the experimental data supporting further researches.

  2. Dielectric constant of water at very high temperature and pressure

    PubMed Central

    Pitzer, Kenneth S.

    1983-01-01

    Pertinent statistical mechanical theory is combined with the available measurements of the dielectric constant of water at high temperature and pressure to predict that property at still higher temperature. The dielectric constant is needed in connection with studies of electrolytes such as NaCl/H2O at very high temperature. PMID:16593342

  3. Functionalised graphene sheets as effective high dielectric constant fillers

    PubMed Central

    2011-01-01

    A new functionalised graphene sheet (FGS) filled poly(dimethyl)siloxane insulator nanocomposite has been developed with high dielectric constant, making it well suited for applications in flexible electronics. The dielectric permittivity increased tenfold at 10 Hz and 2 wt.% FGS, while preserving low dielectric losses and good mechanical properties. The presence of functional groups on the graphene sheet surface improved the compatibility nanofiller/polymer at the interface, reducing the polarisation process. This study demonstrates that functionalised graphene sheets are ideal nanofillers for the development of new polymer composites with high dielectric constant values. PACS: 78.20.Ci, 72.80.Tm, 62.23.Kn PMID:21867505

  4. Aluminum nanoparticle/acrylate copolymer nanocomposites for dielectric elastomers with high dielectric constants

    NASA Astrophysics Data System (ADS)

    Hu, Wei; Zhang, Suki N.; Niu, Xiaofan; Liu, Chao; Pei, Qibing

    2014-03-01

    Dielectric elastomers are useful for large-strain actuation and energy harvesting. Their application has been limited by their low dielectric constants and consequently high driving voltage. Various fillers with high dielectric constants have been incorporated into different elastomer systems to improve the actuation strain, force output and energy density of the compliant actuators and generators. However, agglomeration may happen in these nanocomposites, resulting in a decrease of dielectric strength, an increase of leakage current, and in many instances the degree of enhancement of the dielectric constant. In this work, we investigated aluminum nanoparticles as nanofillers for acrylate copolymers. This metallic nanoparticle was chosen because the availability of free electrons could potentially provide an infinite value of dielectric constant as opposed to dielectric materials including ferroelectric nanocrystals. Moreover, aluminum nanoparticles have a self-passivated oxide shell effectively preventing the formation of conductive path. The surfaces of the aluminum nanoparticles were functionalized with methacrylate groups to assist the uniform dispersion in organic solutions and additionally enable copolymerization with acrylate copolymer matrix during bulk polymerization, and thus to suppress large range drifting of the nanoparticles. The resulting Al nanoparticle-acrylate copolymer nanocomposites were found to exhibit higher dielectric constant and increased stiffness. The leakage current under high electric fields were significantly lower than nanocomposites synthesized without proper nanoparticle surface modification. The dielectric strengths of the composites were comparable with the pristine polymers. In dielectric actuation evaluation, the actuation force output and energy specific work density were enhanced in the nanocomposites compared to the pristine copolymer.

  5. High strength, low dielectric constant fluorinated silica xerogel films

    NASA Astrophysics Data System (ADS)

    Gorman, B. P.; Orozco-Teran, Rosa A.; Roepsch, Jodi A.; Dong, Hanjiang; Reidy, Richard F.; Mueller, D. W.

    2001-12-01

    The mechanical, electrical, and microstructural properties of low-k fluorinated silica xerogels produced using a one step spin-on process are reported. Derived from a fluorinated silane monomer, these films are easily processed and exhibit very low dielectric constants (2.1 as processed and 2.3 after heat treating at 450 °C in air). Structural determination by Fourier transform infrared spectrophotometry indicates a fluorinated silica structure with shortened Si-O bonds; however, some of the fluorine is lost during annealing. Nanoindentation studies show high elastic moduli (12 GPa) and hardness (1 GPa). Microstructural analyses by transmission and scanning electron microscopy indicate an unusual morphology with highly linked features and pore sizes in the 20-30 nm range. We believe the low dielectric constants and robust mechanical properties are due to the unusual microstructure of these films.

  6. Electronic transport in two-dimensional high dielectric constant nanosystems.

    PubMed

    Ortuño, M; Somoza, A M; Vinokur, V M; Baturina, T I

    2015-01-01

    There has been remarkable recent progress in engineering high-dielectric constant two dimensional (2D) materials, which are being actively pursued for applications in nanoelectronics in capacitor and memory devices, energy storage, and high-frequency modulation in communication devices. Yet many of the unique properties of these systems are poorly understood and remain unexplored. Here we report a numerical study of hopping conductivity of the lateral network of capacitors, which models two-dimensional insulators, and demonstrate that 2D long-range Coulomb interactions lead to peculiar size effects. We find that the characteristic energy governing electronic transport scales logarithmically with either system size or electrostatic screening length depending on which one is shorter. Our results are relevant well beyond their immediate context, explaining, for example, recent experimental observations of logarithmic size dependence of electric conductivity of thin superconducting films in the critical vicinity of superconductor-insulator transition where a giant dielectric constant develops. Our findings mark a radical departure from the orthodox view of conductivity in 2D systems as a local characteristic of materials and establish its macroscopic global character as a generic property of high-dielectric constant 2D nanomaterials. PMID:25860804

  7. Electronic transport in two-dimensional high dielectric constant nanosystems

    DOE PAGESBeta

    Ortuño, M.; Somoza, A. M.; Vinokur, V. M.; Baturina, T. I.

    2015-04-10

    There has been remarkable recent progress in engineering high-dielectric constant two dimensional (2D) materials, which are being actively pursued for applications in nanoelectronics in capacitor and memory devices, energy storage, and high-frequency modulation in communication devices. Yet many of the unique properties of these systems are poorly understood and remain unexplored. Here we report a numerical study of hopping conductivity of the lateral network of capacitors, which models two-dimensional insulators, and demonstrate that 2D long-range Coulomb interactions lead to peculiar size effects. We find that the characteristic energy governing electronic transport scales logarithmically with either system size or electrostatic screeningmore » length depending on which one is shorter. Our results are relevant well beyond their immediate context, explaining, for example, recent experimental observations of logarithmic size dependence of electric conductivity of thin superconducting films in the critical vicinity of superconductor-insulator transition where a giant dielectric constant develops. Our findings mark a radical departure from the orthodox view of conductivity in 2D systems as a local characteristic of materials and establish its macroscopic global character as a generic property of high-dielectric constant 2D nanomaterials.« less

  8. Electronic transport in two-dimensional high dielectric constant nanosystems

    SciTech Connect

    Ortuño, M.; Somoza, A. M.; Vinokur, V. M.; Baturina, T. I.

    2015-04-10

    There has been remarkable recent progress in engineering high-dielectric constant two dimensional (2D) materials, which are being actively pursued for applications in nanoelectronics in capacitor and memory devices, energy storage, and high-frequency modulation in communication devices. Yet many of the unique properties of these systems are poorly understood and remain unexplored. Here we report a numerical study of hopping conductivity of the lateral network of capacitors, which models two-dimensional insulators, and demonstrate that 2D long-range Coulomb interactions lead to peculiar size effects. We find that the characteristic energy governing electronic transport scales logarithmically with either system size or electrostatic screening length depending on which one is shorter. Our results are relevant well beyond their immediate context, explaining, for example, recent experimental observations of logarithmic size dependence of electric conductivity of thin superconducting films in the critical vicinity of superconductor-insulator transition where a giant dielectric constant develops. Our findings mark a radical departure from the orthodox view of conductivity in 2D systems as a local characteristic of materials and establish its macroscopic global character as a generic property of high-dielectric constant 2D nanomaterials.

  9. Graphene encapsulated rubber latex composites with high dielectric constant, low dielectric loss and low percolation threshold.

    PubMed

    Tian, Ming; Zhang, Jing; Zhang, Liqun; Liu, Suting; Zan, Xiaoqing; Nishi, Toshio; Ning, Nanying

    2014-09-15

    A dielectric composite with high dielectric constant, low dielectric loss and low percolation threshold was prepared by using the combined strategy of encapsulating of graphene oxide nanosheets (GONS) on carboxylated nitrile rubber (XNBR) latex particles and the in situ thermal reduction in GONS at a moderate temperature. The encapsulation of GONS on XNBR latex particles was mainly realized via the hydrogen bonding interactions between GONS and XNBR during latex mixing. A segregated graphene network was obtained at a low content of thermally reduced graphene (TRG), resulting in a low percolation threshold (0.25 vol.%). The dielectric constant at 100 Hz obviously increased from 23 for pure XNBR to 2211 and 5542 for the composite with 0.5 vol.% and 0.75 vol.% of TRG, respectively. The dielectric loss of the composites retained at a low value (less than 1.5). Meanwhile, the elastic modulus only slightly increased with the presence of 0.1-0.5 vol.% of TRG, keeping the good flexibility of the dielectric composites. This study provides a simple, low-cost and effective method to prepare high performance dielectric composites, facilitating the wide application of dielectric materials. PMID:24972295

  10. The High Dielectric Constant of Staphylococcal Nuclease is Encoded in its Structural Architecture

    PubMed Central

    Goh, Garrett B.; Bertrand, García-Moreno E.; Brooks, Charles L.

    2011-01-01

    The pKa values of Lys-66, Glu-66 and Asp-66 buried in the interior of the staphylococcal nuclease Δ+PHS variant were reported to be shifted by as much as 5 pKa units from their normal values. Reproducing the pKa of these buried ionizable residues using continuum electrostatic calculations required the use of a high protein dielectric constant of 10 or higher. The apparent high dielectric constant has been rationalized as a consequence of a local structural reorganization or increased fluctuations in the microenvironment of the mutation site We have calculated the dielectric constant of Δ+PHS and the Lys-66, Asp-66 and Glu-66 mutants from first principles using the Kirkwood-Fröhlich equation, and discovered that staphylococcal nuclease has a naturally high dielectric constant ranging from 20 to 30. This high dielectric constant does not change significantly with the mutation of residue 66 or with the ionization of the mutated residues. Calculation of the spatial dependence of the dielectric constant for the microenvironment of residue-66 produces a value of about 10, which matches well with the apparent dielectric constant needed to reproduce pKa values from continuum electrostatic calculations. Our results suggest an alternative explanation that the high dielectric constant of staphylococcal nuclease is a property resulting from the intrinsic backbone fluctuations originating from its structural architecture. PMID:22085022

  11. Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant

    SciTech Connect

    Huang, LM; Liu, SY; Van Tassell, BJ; Liu, XH; Byro, A; Zhang, HN; Leland, ES; Akins, DL; Steingart, DA; Li, J; O'Brien, S

    2013-09-24

    Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized. (Ba; Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm(2) and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of. (Ba; Sr ) TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated

  12. In-line measurement of high temperature dielectric constant in the process of sintering

    SciTech Connect

    Zhou Jian; Cheng Jiping; Tang Yuling; Qiu Jinyu

    1996-12-31

    In this paper, a resonant cavity method is developed and some experimental results for measuring dielectric constants of ceramic samples (e.g., Al{sub 2}O{sub 3}) under different sintering temperatures are reported. The experiments show that this method has higher precision and good prospects of in-line monitoring the high temperature dielectric constant in the process of raising the temperature of the samples. These results provide some scientific experimental basis for physical research of ceramic materials.

  13. Dielectric Constant of Suspensions

    NASA Astrophysics Data System (ADS)

    Mendelson, Kenneth S.; Ackmann, James J.

    1997-03-01

    We have used a finite element method to calculate the dielectric constant of a cubic array of spheres. Extensive calculations support preliminary conclusions reported previously (K. Mendelson and J. Ackmann, Bull. Am. Phys. Soc. 41), 657 (1996).. At frequencies below 100 kHz the real part of the dielectric constant (ɛ') shows oscillations as a function of the volume fraction of suspension. These oscillations disappear at low conductivities of the suspending fluid. Measurements of the dielectric constant (J. Ackmann, et al., Ann. Biomed. Eng. 24), 58 (1996). (H. Fricke and H. Curtis, J. Phys. Chem. 41), 729 (1937). are not sufficiently sensitive to show oscillations but appear to be consistent with the theoretical results.

  14. New high dielectric constant materials for tailoring the B1+ distribution at high magnetic fields

    NASA Astrophysics Data System (ADS)

    Haines, K.; Smith, N. B.; Webb, A. G.

    2010-04-01

    The spatial distribution of electromagnetic fields within the human body can be tailored using external dielectric materials. Here, we introduce a new material with high dielectric constant, and also low background MRI signal. The material is based upon metal titanates, which can be made into a geometrically-formable suspension in de-ionized water. The material properties of the suspension are characterized from 100 to 400 MHz. Results obtained at 7 T show a significant increase in image intensity in areas such as the temporal lobe and base of the brain with the new material placed around the head, and improved performance compared to purely water-based gels.

  15. Evaluation of the dielectric constant for RF shimming at high field MRI

    NASA Astrophysics Data System (ADS)

    Jayatilake, Mohan; Storrs, Judd; Chu, Wen-Jang; Lee, Jing-Huei

    2010-10-01

    Optimal image quality for Magnetic Resonance Imaging (MRI) at high fields requires a homogeneous RF (B1) field; however, the dielectric properties of the human brain result in B1 field inhomogeneities and signal loss at the periphery of the head. These result from constructive and destructive RF interactions of complex wave behaviour, which become worse with increasing magnetic field strength. Placement of a shim object with high-dielectric constant adjacent to the body has been proposed as a method for reducing B1 inhomogeneity by altering wave propagation within the volume of interest. Selecting the appropriate permittivity and quantity of material for the shim is essential. Whereas previous work has determined the dielectric properties of the shim empirically, this work introduces an improved theoretical framework for determining the requisite dielectric constant of the passive shim material directly by increasing the axial or minimizing the radial propagation constant.

  16. High temperature dielectric constant measurement - another analytical tool for ceramic studies?

    SciTech Connect

    Hutcheon, R.M.; Hayward, P.; Alexander, S.B.

    1995-12-31

    The automation of a high-temperature (1400{degrees}C), microwave-frequency, dielectric constant measurement system has dramatically increased the reproducibility and detail of data. One can now consider using the technique as a standard tool for analytical studies of low-conductivity ceramics and glasses. Simultaneous temperature and frequency scanning dielectric analyses (SDA) yield the temperature-dependent complex dielectric constant. The real part of the dielectric constant is especially sensitive to small changes in the distance and distribution of neighboring ions or atoms, while the absorptive part is strongly dependent on the position and population of electron/hole conduction bands, which are sensitive to impurity concentrations in the ceramic. SDA measurements on a few specific materials will be compared with standard differential thermal analysis (DTA) results and an attempt will be made to demonstrate the utility of both the common and complementary aspects of the techniques.

  17. Image brightening in samples of high dielectric constant

    NASA Astrophysics Data System (ADS)

    Tropp, James

    2004-03-01

    An analytic solution is given for the electromagnetic problem of a lossy dielectric cylinder of infinite length, irradiated by a circularly polarized radiofrequency (RF) magnetic field; the NMR-active components of the field inside the cylinder are projected out by transforming the RF Hamiltonian to the rotating frame and retaining only those terms independent of time; it is noted that the resulting cartesian field components are required to be real. The squared magnitude of the NMR-active fields are then used to calculate the gradient-recalled images of the cylinder, for small tip angles of the magnetization; and the result is shown to predict almost quantitatively the intensity patterns of experimental proton images at 3.0 and 4.0 T, in a cylindrical phantom of radius 9.25 cm, filled with 0.05 M aqueous NaCl. In particular, the artifactual brightening at the center of the recorded image is convincingly reproduced in a simulation, whose underlying model excludes wave propagation along the direction of the cylinder axis. Formation of the artifact is explained in terms of the focussing of the RF magnetic field at the center of the cylinder, as illustrated by contour plots showing the time evolution of the rotating flux. An extended electromagnetic model—having the dielectric cylinder enclosed in a long, shielded volume resonator (e.g., of bird cage type)—is then sketched. The mathematical details appear in Appendix A; and the simulated images are shown to be virtually indistinguishable from those of the simpler original model. The theory of the Q, or quality factor, of the dielectric cylinder—considered itself as a resonant object—is developed for the enclosed cylinder model, where flux containment by the shield permits an unambiguous treatment of both the stored energy and the radiative losses. This is extended to treat the Q of a lossy dielectric sphere without shielding. Further plots of flux contours are given for the sphere, excited at 208 MHz with a

  18. Image brightening in samples of high dielectric constant.

    PubMed

    Tropp, James

    2004-03-01

    An analytic solution is given for the electromagnetic problem of a lossy dielectric cylinder of infinite length, irradiated by a circularly polarized radiofrequency (RF) magnetic field; the NMR-active components of the field inside the cylinder are projected out by transforming the RF Hamiltonian to the rotating frame and retaining only those terms independent of time; it is noted that the resulting cartesian field components are required to be real. The squared magnitude of the NMR-active fields are then used to calculate the gradient-recalled images of the cylinder, for small tip angles of the magnetization; and the result is shown to predict almost quantitatively the intensity patterns of experimental proton images at 3.0 and 4.0T, in a cylindrical phantom of radius 9.25cm, filled with 0.05M aqueous NaCl. In particular, the artifactual brightening at the center of the recorded image is convincingly reproduced in a simulation, whose underlying model excludes wave propagation along the direction of the cylinder axis. Formation of the artifact is explained in terms of the focussing of the RF magnetic field at the center of the cylinder, as illustrated by contour plots showing the time evolution of the rotating flux. An extended electromagnetic model--having the dielectric cylinder enclosed in a long, shielded volume resonator (e.g., of bird cage type)--is then sketched. The mathematical details appear in Appendix A; and the simulated images are shown to be virtually indistinguishable from those of the simpler original model. The theory of the Q, or quality factor, of the dielectric cylinder--considered itself as a resonant object--is developed for the enclosed cylinder model, where flux containment by the shield permits an unambiguous treatment of both the stored energy and the radiative losses. This is extended to treat the Q of a lossy dielectric sphere without shielding. Further plots of flux contours are given for the sphere, excited at 208 MHz with a uniform

  19. Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant

    NASA Astrophysics Data System (ADS)

    Huang, Limin; Liu, Shuangyi; Van Tassell, Barry J.; Liu, Xiaohua; Byro, Andrew; Zhang, Henan; Leland, Eli S.; Akins, Daniel L.; Steingart, Daniel A.; Li, Jackie; O'Brien, Stephen

    2013-10-01

    Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba,Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm2 and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba,Sr)TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated to be ideal for the production of nanocomposites. The

  20. Elastomeric composites with high dielectric constant for use in Maxwell stress actuators

    NASA Astrophysics Data System (ADS)

    Szabo, Jeffrey P.; Hiltz, Johnathan A.; Cameron, Colin G.; Underhill, Royale S.; Massey, Jason; White, Brian; Leidner, Jacob

    2003-07-01

    Electroactive polymer actuators that utilize the Maxwell stress effect have generated considerable interest in recent years for use in applications such as artificial muscles, sensors, and parasitic energy capture. In order to maximize performance, the dielectric layer in Maxwell stress actuators should ideally have a high dielectric constant and high dielectric breakdown strength. In this study, the effect of high dielectric constant fillers on the electrical and mechanical properties of thin elastomeric films was examined. The fillers studied included the inorganic compounds titanium dioxide (TiO2), barium titanate (BaTiO3), and lead magnesium niobate-lead titanate (Pb(Mg1/3Nb2/3)O3-PbTiO). A high dielectric constant filler based on a polymeric conjugated ligand-metal complex, poly(copper phthalocyanine), was also synthesized and studied. Maxwell stress actuators fabricated with BaTiO3 dispersed in a silicone elastomer matrix were evaluated and compared with unfilled systems. A model was presented which relates filler volume fraction to actuation stress, strain, and elastic energy density at fields below dielectric breakdown. The model and experimental results suggest that for the case of strong filler particle-elastomer matrix interaction, actuation strain decreases with increasing filler content.

  1. A miniaturized flexible antenna printed on a high dielectric constant nanopaper composite.

    PubMed

    Inui, Tetsuji; Koga, Hirotaka; Nogi, Masaya; Komoda, Natsuki; Suganuma, Katsuaki

    2015-02-01

    A high-dielectric-constant and flexible cellulose nanopaper composite is prepared by mixing a small amount of silver nanowires with cellulose nanofibers. The nanopaper antenna is downsized by about a half when using the nanopaper substrate. The nanopaper antenna has potential in wearable wireless communication devices. PMID:25530578

  2. Nanocomposites of TiO2/cyanoethylated cellulose with ultra high dielectric constants

    NASA Astrophysics Data System (ADS)

    Madusanka, Nadeesh; Shivareddy, Sai G.; Hiralal, Pritesh; Eddleston, Mark D.; Choi, Youngjin; Oliver, Rachel A.; Amaratunga, Gehan A. J.

    2016-05-01

    A novel dielectric nanocomposite containing a high permittivity polymer, cyanoethylated cellulose (CRS) and TiO2 nanoparticles was successfully prepared with different weight percentages (10%, 20% and 30%) of TiO2. The intermolecular interactions and morphology within the polymer nanocomposites were analysed. TiO2/CRS nanofilms on SiO2/Si wafers were used to form metal–insulator–metal type capacitors. Capacitances and loss factors in the frequency range of 1 kHz–1 MHz were measured. At 1 kHz CRS-TiO2 nanocomposites exhibited ultra high dielectric constants of 118, 176 and 207 for nanocomposites with 10%, 20% and 30% weight of TiO2 respectively, significantly higher than reported values of pure CRS (21), TiO2 (41) and other dielectric polymer-TiO2 nanocomposite films. Furthermore, all three CRS-TiO2 nanocomposites show a loss factor <0.3 at 1 kHz and low leakage current densities (10‑6–10‑7 A cm‑2). Leakage was studied using conductive atomic force microscopy and it was observed that the leakage is associated with TiO2 nanoparticles embedded in the CRS polymer matrix. A new class of ultra high dielectric constant hybrids using nanoscale inorganic dielectrics dispersed in a high permittivity polymer suitable for energy management applications is reported.

  3. Nanocomposites of TiO₂/cyanoethylated cellulose with ultra high dielectric constants.

    PubMed

    Madusanka, Nadeesh; Shivareddy, Sai G; Hiralal, Pritesh; Eddleston, Mark D; Choi, Youngjin; Oliver, Rachel A; Amaratunga, Gehan A J

    2016-05-13

    A novel dielectric nanocomposite containing a high permittivity polymer, cyanoethylated cellulose (CRS) and TiO2 nanoparticles was successfully prepared with different weight percentages (10%, 20% and 30%) of TiO2. The intermolecular interactions and morphology within the polymer nanocomposites were analysed. TiO2/CRS nanofilms on SiO2/Si wafers were used to form metal-insulator-metal type capacitors. Capacitances and loss factors in the frequency range of 1 kHz-1 MHz were measured. At 1 kHz CRS-TiO2 nanocomposites exhibited ultra high dielectric constants of 118, 176 and 207 for nanocomposites with 10%, 20% and 30% weight of TiO2 respectively, significantly higher than reported values of pure CRS (21), TiO2 (41) and other dielectric polymer-TiO2 nanocomposite films. Furthermore, all three CRS-TiO2 nanocomposites show a loss factor <0.3 at 1 kHz and low leakage current densities (10(-6)-10(-7) A cm(-2)). Leakage was studied using conductive atomic force microscopy and it was observed that the leakage is associated with TiO2 nanoparticles embedded in the CRS polymer matrix. A new class of ultra high dielectric constant hybrids using nanoscale inorganic dielectrics dispersed in a high permittivity polymer suitable for energy management applications is reported. PMID:27040504

  4. Exploratory studies of new avenues to achieve high electromechanical response and high dielectric constant in polymeric materials

    NASA Astrophysics Data System (ADS)

    Huang, Cheng

    High performance soft electronic materials are key elements in advanced electronic devices for broad range applications including capacitors, actuators, artificial muscles and organs, smart materials and structures, microelectromechanical (MEMS) and microfluidic devices, acoustic devices and sensors. This thesis exploits new approaches to improve the electromechanical response and dielectric response of these materials. By making use of novel material phenomena such as large anisotropy in dipolar response in liquid crystals (LCs) and all-organic composites in which high dielectric constant organic solids and conductive polymers are either physically blended into or chemically grafted to a polymer matrix, we demonstrate that high dielectric constant and high electromechanical conversion efficiency comparable to that in ceramic materials can be achieved. Nano-composite approach can also be utilized to improve the performance of the electronic electroactive polymers (EAPs) and composites, for example, exchange coupling between the fillers and matrix with very large dielectric contrast can lead to significantly enhance the dielectric response as well as electromechanical response when the heterogeneity size of the composite is comparable to the exchange length. In addition to the dielectric composites, in which high dielectric constant fillers raise the dielectric constant of composites, conductive percolation can also lead to high dielectric constant in polymeric materials. An all-polymer percolative composite is introduced which exhibits very high dielectric constant (>7,000). The flexible all-polymer composites with a high dielectric constant make it possible to induce a high electromechanical response under a much reduced electric field in the field effect electroactive polymer (EAP) actuators (a strain of 2.65% with an elastic energy density of 0.18 J/cm3 can be achieved under a field of 16 V/mum). Agglomeration of the particles can also be effectively prevented

  5. An all-organic composite actuator material with a high dielectric constant

    NASA Astrophysics Data System (ADS)

    Zhang, Q. M.; Li, Hengfeng; Poh, Martin; Xia, Feng; Cheng, Z.-Y.; Xu, Haisheng; Huang, Cheng

    2002-09-01

    Electroactive polymers (EAPs) can behave as actuators, changing their shape in response to electrical stimulation. EAPs that are controlled by external electric fields-referred to here as field-type EAPs-include ferroelectric polymers, electrostrictive polymers, dielectric elastomers and liquid crystal polymers. Field-type EAPs can exhibit fast response speeds, low hysteresis and strain levels far above those of traditional piezoelectric materials, with elastic energy densities even higher than those of piezoceramics. However, these polymers also require a high field (>70Vµm-1) to generate such high elastic energy densities (>0.1Jcm-3 refs 4, 5, 9, 10). Here we report a new class of all-organic field-type EAP composites, which can exhibit high elastic energy densities induced by an electric field of only 13Vµm-1. The composites are fabricated from an organic filler material possessing very high dielectric constant dispersed in an electrostrictive polymer matrix. The composites can exhibit high net dielectric constants while retaining the flexibility of the matrix. These all-organic actuators could find applications as artificial muscles, `smart skins' for drag reduction, and in microfluidic systems for drug delivery.

  6. Sulfone-Containing Dipolar Glass Polymers with High Dielectric Constant and Low Loss Property

    NASA Astrophysics Data System (ADS)

    Zhu, Yufeng; Zhang, Zhongbo; Litt, Morton; Zhu, Lei

    Sulfone-containing polyoxetanes are designed and synthesized for high dielectric constant and low loss dipolar glasses. The precursor polymer, poly(3,3-bis(chloromethyl)oxetane) (PBCMO) is synthesized by bulk cationic polymerization with boron trifluoride diethyl etherate as initiator. The number-average molecular weight of PBCMO is 73 kDa, with a polydispersity of 1.53 as obtained from size-exclusion chromatography results. Post-modification of PBCMO yields the dipolar glass polymer, poly(3,3-bis(methylsulfonylmethyl)oxetane) (MST). Nuclear magnetic resonance result shows 100% conversion. Differential scanning calorimetry result indicates that MST has a glass transition temperature of ca. 120 °C. Due to the large dipole moment (4.25 D) and small size of the side-chain sulfone groups, MST exhibits a high dielectric constant of 8.7 and a low dissipation factor of 0.01 at 25 °C and 1 Hz. This study suggests that dipolar glass polymers with large dipole moments and small-sized dipoles in the side chains are promising candidates for high energy density and low loss dielectric applications. This work is supported by NSF Polymers Program (DMR-1402733).

  7. High apparent dielectric constants in the interior of a protein reflect water penetration.

    PubMed Central

    Dwyer, J J; Gittis, A G; Karp, D A; Lattman, E E; Spencer, D S; Stites, W E; García-Moreno E, B

    2000-01-01

    A glutamic acid was buried in the hydrophobic core of staphylococcal nuclease by replacement of Val-66. Its pK(a) was measured with equilibrium thermodynamic methods. It was 4.3 units higher than the pK(a) of Glu in water. This increase was comparable to the DeltapK(a) of 4.9 units measured previously for a lysine buried at the same location. According to the Born formalism these DeltapK(a) are energetically equivalent to the transfer of a charged group from water to a medium of dielectric constant of 12. In contrast, the static dielectric constants of dry protein powders range from 2 to 4. In the crystallographic structure of the V66E mutant, a chain of water molecules was seen that hydrates the buried Glu-66 and links it with bulk solvent. The buried water molecules have never previously been detected in >20 structures of nuclease. The structure and the measured energetics constitute compelling and unprecedented experimental evidence that solvent penetration can contribute significantly to the high apparent polarizability inside proteins. To improve structure-based calculations of electrostatic effects with continuum methods, it will be necessary to learn to account quantitatively for the contributions by solvent penetration to dielectric effects in the protein interior. PMID:10969021

  8. High dielectric constant nickel-doped titanium oxide films prepared by liquid-phase deposition

    NASA Astrophysics Data System (ADS)

    Lee, Ming-Kwei; Yen, Chih-Feng; Fan, Cho-Han

    2014-09-01

    The electrical characteristics of nickel-doped titanium oxide films prepared by liquid-phase deposition on p-type (100) silicon substrate were investigated. The aqueous solutions of ammonium hexafluorotitanate and boric acid were used as precursors for the growth of titanium oxide films and the dielectric constant is 29. The dielectric constant can be improved to 94 by nickel doping at the thermal annealing at 700 °C in nitrous oxide.

  9. Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

    NASA Astrophysics Data System (ADS)

    Cheng, Shaoheng; Sang, Liwen; Liao, Meiyong; Liu, Jiangwei; Imura, Masataka; Li, Hongdong; Koide, Yasuo

    2012-12-01

    The authors report on the direct integration of high-dielectric constant (high-k) Ta2O5 films on p-type single crystal diamond for high-power electronic devices. Crystallized hexagonal phase δ-Ta2O5 film is achieved on diamond by annealing the amorphous Ta2O5 film deposited by a sputter-deposition technique. The electrical properties of the Ta2O5 thin films are investigated by fabricating metal-insulator-semiconductor (MIS) diodes. The leakage current of the MIS diode is as low as 10-8 A/cm2 for the as-deposited amorphous Ta2O5 film and 10-2 A/cm2 for the crystallized film, which is 108 and 102 times lower than that of the Schottky diode at a forward bias of -3 V, respectively. The dielectric constant of the amorphous Ta2O5 films is measured to be 16 and increases to 29 after annealing at 800 °C. Different current leakage mechanisms and charge trapping behaviors are proposed for the amorphous and crystallized Ta2O5 thin films.

  10. High Apparent Dielectric Constant Inside a Protein Reflects Structural Reorganization Coupled to the Ionization of an Internal Asp

    PubMed Central

    Karp, Daniel A.; Gittis, Apostolos G.; Stahley, Mary R.; Fitch, Carolyn A.; Stites, Wesley E.; García-Moreno E., Bertrand

    2007-01-01

    The dielectric properties of proteins are poorly understood and difficult to describe quantitatively. This limits the accuracy of methods for structure-based calculation of electrostatic energies and pKa values. The pKa values of many internal groups report apparent protein dielectric constants of 10 or higher. These values are substantially higher than the dielectric constants of 2–4 measured experimentally with dry proteins. The structural origins of these high apparent dielectric constants are not well understood. Here we report on structural and equilibrium thermodynamic studies of the effects of pH on the V66D variant of staphylococcal nuclease. In a crystal structure of this protein the neutral side chain of Asp-66 is buried in the hydrophobic core of the protein and hydrated by internal water molecules. Asp-66 titrates with a pKa value near 9. A decrease in the far UV-CD signal was observed, concomitant with ionization of this aspartic acid, and consistent with the loss of 1.5 turns of α-helix. These data suggest that the protein dielectric constant needed to reproduce the pKa value of Asp-66 with continuum electrostatics calculations is high because the dielectric constant has to capture, implicitly, the energetic consequences of the structural reorganization that are not treated explicitly in continuum calculations with static structures. PMID:17172297

  11. Stiff, strong, yet tough free-standing dielectric films of graphene nanosheets-polyurethane nanocomposites with very high dielectric constant and loss

    NASA Astrophysics Data System (ADS)

    Jan, Rahim; Habib, Amir; Gul, Iftikhar Hussain

    2016-01-01

    In this study, graphene nanosheets (GNS) prepared through a liquid exfoliation technique are dispersed in thermoplastic polyurethane (TPU) at a volume fraction (Vf) of up to 0.19. Then, the electrical and mechanical properties of the obtained composites are characterized. The dielectric spectroscopy shows an excessive variation in dielectric constant (1.1 to 3.53 × 107) and dielectric tangent loss (0.03 to 2515) with varying Vf over the frequency range of 25 kHz to 5 MHz. A considerable enhancement in electrical conductivity (DC) is found, from 3.87 × 10-10 S/m (base polymer) to 53.5 S/m for the 0.19 Vf GNS-TPU nanocomposite. The GNS-TPU composites are mechanically robust, with a considerable increase in stiffness (˜4-fold) and strength (almost twice), maintaining its ductility up to 0.09 Vf GNS. The high dielectric constant at lower frequencies is attributed to the well-established Maxwell-Wagner polarization effect, whereas the high dielectric tangent loss is due to leakage currents as a physical conducting network is formed at high filler loadings. The layered structure, high aspect ratio, and improved dispersion of GNS are the main reasons for the improvement in both the dielectric characteristics and the mechanical properties of the host polymer. [Figure not available: see fulltext.

  12. Dipole correlation effects on the local field and the effective dielectric constant in composite dielectrics containing high-k inclusions.

    PubMed

    Allahyarov, Elshad; Löwen, Hartmut; Zhu, Lei

    2016-07-28

    Mixing dielectric polymers with high permittivity (high-k) inclusions can affect their electrical properties. In actuation applications of dielectric elastomers, the polarized inclusions generate additional volume polarization-related electrostriction. In energy storage applications, it is possible to store more energy in dielectric composites because of additional polarization of the inclusions and interfaces. However, mixing an electroactive polymer with high-k inclusions also brings several disadvantages. The expulsion of the field from the interior of high-k fillers and the presence of two poles on the filler surface along the applied field direction result in higher local fields EL near the inclusion poles. The resulting field enhancement lowers the breakdown field (Eb) threshold for the material and therefore compromises the actuation and energy storage capabilities of dielectric composites. To mitigate this issue, the dependence of EL on the morphology of inclusion distribution, the field localization effect in chained configurations, and the role of the dipole-dipole correlation effects in the enhancement of the dipolar field of inclusions are analyzed. We show that the dipolar correlation effects are strong in large inclusion composites and their contribution to the inclusion dipole moment μ and to the local fields EL can reach 30-50%. A new method for deriving the composite permittivity from the field EL distribution, based on a caged probe technique, is also presented. PMID:27357433

  13. Density fluctuations and dielectric constant of water in low and high density liquid states

    NASA Astrophysics Data System (ADS)

    Lascaris, Erik; Zhang, Cui; Galli, Giulia A.; Franzese, Giancarlo; Stanley, H. Eugene

    2012-02-01

    The hypothesis of a liquid-liquid critical point (LLCP) in the phase diagram of water, though first published many years ago, still remains the subject of a heated debate. According to this hypothesis there exists a critical point near T 244 K, and P 215 MPa, located at the end of a coexistence line between a high density liquid (HDL) and a low density liquid state (LDL). The LLCP lies below the homogenous nucleation temperature of water and it has so far remained inaccessible to experiments. We study a model of water exhibiting a liquid-liquid phase transition (that is a liquid interacting through the ST2 potential) and investigate the properties of dipolar fluctuations as a function of density, in the HDL and LDL. We find an interesting correlation between the macroscopic dielectric constants and the densities of the two liquids in the vicinity of the critical point, and we discuss possible implications for measurements close to the region where the LLCP may be located.

  14. Capacitive Cells for Dielectric Constant Measurement

    ERIC Educational Resources Information Center

    Aguilar, Horacio Munguía; Maldonado, Rigoberto Franco

    2015-01-01

    A simple capacitive cell for dielectric constant measurement in liquids is presented. As an illustrative application, the cell is used for measuring the degradation of overheated edible oil through the evaluation of their dielectric constant.

  15. Polymethyl methacrylate (PMMA)-bismuth ferrite (BFO) nanocomposite: low loss and high dielectric constant materials with perceptible magnetic properties.

    PubMed

    Tamboli, Mohaseen S; Palei, Prakash K; Patil, Santosh S; Kulkarni, Milind V; Maldar, Noormahmad N; Kale, Bharat B

    2014-09-21

    Herein, poly(methyl methacrylate)-bismuth ferrite (PMMA-BFO) nanocomposites were successfully prepared by an in situ polymerization method for the first time. Initially, the as prepared bismuth ferrite (BFO) nanoparticles were dispersed in the monomer, (methyl methacrylate) by sonication. Benzoyl peroxide was used to initiate the polymerization reaction in ethyl acetate medium. The nanocomposite films were subjected to X-ray diffraction analysis (XRD), (1)H NMR, field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), thermogravimetric analysis (TGA), infrared spectroscopy (IR), dielectric and magnetic characterizations. The dielectric measurement of the nanocomposites was investigated at a frequency range of 10 Hz to 1 MHz. It was found that the nanocomposites not only showed a significantly increased value of the dielectric constant with an increase in the loading percentage of BFO as compared to pure PMMA, but also exhibited low dielectric loss values over a wide range of frequencies. The values of the dielectric constant and dielectric loss of the PMMA-BFO5 (5% BFO loading) sample at 1 kHz frequency was found be ~14 and 0.037. The variation of the ferromagnetic response of the nanocomposite was consistent with the varying volume percentage of the nanoparticles. The remnant magnetization (Mr) and saturation magnetization (Ms) values of the composites were found to be enhanced by increasing the loading percentage of BFO. The value of Ms for PMMA-BFO5 was found to be ~6 emu g(-1). The prima facie observations suggest that the nanocomposite is a potential candidate for application in high dielectric constant capacitors. Significantly, based on its magnetic properties the composite will also be useful for use in hard disk components. PMID:25050918

  16. Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors.

    PubMed

    Lee, Yunseong; Jeon, Woojin; Cho, Yeonchoo; Lee, Min-Hyun; Jeong, Seong-Jun; Park, Jongsun; Park, Seongjun

    2016-07-26

    We introduce a reliable and robust gate dielectric material with tunable dielectric constants based on a mesostructured HfxAlyO2 film. The ultrathin mesostructured HfxAlyO2 film is deposited on graphene via a physisorbed-precursor-assisted atomic layer deposition process and consists of an intermediate state with small crystallized parts in an amorphous matrix. Crystal phase engineering using Al dopant is employed to achieve HfO2 phase transitions, which produce the crystallized part of the mesostructured HfxAlyO2 film. The effects of various Al doping concentrations are examined, and an enhanced dielectric constant of ∼25 is obtained. Further, the leakage current is suppressed (∼10(-8) A/cm(2)) and the dielectric breakdown properties are enhanced (breakdown field: ∼7 MV/cm) by the partially remaining amorphous matrix. We believe that this contribution is theoretically and practically relevant because excellent gate dielectric performance is obtained. In addition, an array of top-gated metal-insulator-graphene field-effect transistors is fabricated on a 6 in. wafer, yielding a capacitance equivalent oxide thickness of less than 1 nm (0.78 nm). This low capacitance equivalent oxide thickness has important implications for the incorporation of graphene into high-performance silicon-based nanoelectronics. PMID:27355098

  17. High-relative-dielectric-constant bismuth-niobium-oxide films prepared using Nb-rich precursor solution

    NASA Astrophysics Data System (ADS)

    Ariga, Tomoki; Inoue, Satoshi; Matsumoto, Shin; Onoue, Masatoshi; Miyasako, Takaaki; Tokumitsu, Eisuke; Shimoda, Tatsuya

    2015-09-01

    Various ceramic materials have been developed for electronic devices. Bismuth-niobium-oxide (BNO) films prepared by a chemical solution deposition (CSD) method have the cubic pyrochlore phase, high relative dielectric constant, and low tangent loss (tan δ). We found that a BNO cubic pyrochlore crystal was Nb-rich, even though its pyrochlore formula is A2B2O7. The crystallization temperature of BNO increased with increasing Nb ratio. The relative dielectric constants of BNO films were related to the Nb ratio in the precursor solution. The dielectric constant of the BNO films was 250 when the Bi and Nb ratios in BNO precursor solutions were 4 and 6, respectively, and the sintering temperature was 600 °C. In addition, the tan δ was less than 0.01 at 1 kHz, which is higher than the reported values of BNO systems despite using the CSD method. These results show that the properties of BNO films prepared by the CSD method were associated with the Nb ratio in the precursor solution. Furthermore, the dielectric characteristics indicated that the Nb-rich BNO films have potential applications in electronic devices.

  18. Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

    DOEpatents

    Auciello, Orlando

    2010-05-11

    A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

  19. Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond

    NASA Astrophysics Data System (ADS)

    Zhao, Jing; Liu, Jiangwei; Sang, Liwen; Liao, Meiyong; Coathup, David; Imura, Masataka; Shi, Baogui; Gu, Changzhi; Koide, Yasuo; Ye, Haitao

    2016-01-01

    A high-dielectric constant (high-k) TiOx thin layer was fabricated on hydrogen-terminated diamond (H-diamond) surface by low temperature oxidation of a thin titanium layer in ambient air. The metallic titanium layer was deposited by sputter deposition. The dielectric constant of the resultant TiOx was calculated to be around 12. The capacitance density of the metal-oxide-semiconductor (MOS) based on the TiOx/H-diamond was as high as 0.75 μF/cm2 contributed from the high-k value and the very thin thickness of the TiOx layer. The leakage current was lower than 10-13 A at reverse biases and 10-7A at the forward bias of -2 V. The MOS field-effect transistor based on the high-k TiOx/H-diamond was demonstrated. The utilization of the high-k TiOx with a very thin thickness brought forward the features of an ideally low subthreshold swing slope of 65 mV per decade and improved drain current at low gate voltages. The advantages of the utilization high-k dielectric for diamond metal-oxide semiconductor field effect transistors are anticipated.

  20. Chemical vapor deposition and characterization of zirconium tin titanate as a high dielectric constant material for potential electronic applications

    NASA Astrophysics Data System (ADS)

    Mays, Ebony Lynn

    Integrated circuit (IC) manufacturers increasingly need new high dielectric constant (epsilon) materials for gate stacks to maintain the pace of developing faster, higher capacity CMOS and DRAM devices. Identification of new high-epsilon materials that can be integrated into current manufacturing processes is critical to the continued development of IC devices. Using magnetron sputtering and a compositional spread approach, a key composition of amorphous zirconium tin titanate (a-ZTT) films was found to exhibit a dielectric constant from 50 to 70 and leakage currents from 10-9 to 10 -7 A/cm2 at 1 MV/cm. Chemical Vapor Deposition (CVD) is an attractive technique for deposition of ZTT films because it offers several advantages over sputter deposition. Many processing parameters can be controlled and varied in the optimization of the film microstructure and composition. In addition, high-epsilon phases of the compounds might be achieved at low temperatures by using plasma enhancement of the CVD process. Alternatively, use of ozone or other oxidants may allow complete oxidation of metal precursors at lower processing temperatures. The following discussion details the construction and modification of a CVD reactor for the deposition of ZTT thin films. In addition, characterization of a precursor "cocktail"---a solution containing all the metal components of the film---for the deposition of ZTT thin films is discussed. Discussion includes experiments characterizing the dielectric and device properties (dielectric constant, dielectric loss, capacitance, and leakage current) of CVD-grown, a-ZTT thin films using the precursor "cocktail". The importance of the relationship of the cation ratio in the precursor that is translated to the film and its relationship to the dielectric properties are shown. The device properties of ZTT films were measured using Capacitance-Voltage (CV) and Current-Voltage (IV) analysis, while dielectric properties were explored using Impedance

  1. Dielectric constant microscopy for biological materials

    NASA Astrophysics Data System (ADS)

    Valavade, A. V.; Kothari, D. C.; Löbbe, C.

    2013-02-01

    This paper describes the work on the development of Dielectric Constant Microscopy for biological materials using double pass amplitude modulation method. The dielectric constant information can be obtained at nanometer scales using this technique. Electrostatic force microscopy images of biological materials are presented. The images obtained from the EFM technique mode clearly show inversion contrast and gives the spatial variation of tip-sample capacitance. The EFM images are further processed to obtain dielectric constant information at nanometer scales.

  2. Negative Dielectric Constant Material Based on Ion Conducting Materials

    NASA Technical Reports Server (NTRS)

    Gordon, Keith L. (Inventor); Kang, Jin Ho (Inventor); Park, Cheol (Inventor); Lillehei, Peter T. (Inventor); Harrison, Joycelyn S. (Inventor)

    2014-01-01

    Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly(benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

  3. Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

    NASA Astrophysics Data System (ADS)

    Kim, Se Hyun; Yun, Won Min; Kwon, Oh-Kwan; Hong, Kipyo; Yang, Chanwoo; Choi, Woon-Seop; Eon Park, Chan

    2010-11-01

    Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics. The crosslinked CR-V-based OFET could be operated successfully at low voltages (below 4 V), but abnormal behaviour during device operation, such as uncertainty in the field-effect mobility (μ) and hysteresis, was induced by the slow polarization of moieties embedded in the gate dielectric (e.g. polar functionalities, ionic impurities, water and solvent molecules). In an effort to improve the stability of OFET operation, we measured the dependence of μ and hysteresis on dielectric thickness, CR-V crosslinking conditions and sweep rate of the gate bias. The influence of the CR-V surface properties on μ, hysteresis, and the structural and morphological features of the pentacene layer grown on the gate dielectric was characterized and compared with the properties of pentacene grown on a polystyrene surface.

  4. Structure-property relationships of nano-foam polyimide films with low dielectric constant and high thermal stability

    SciTech Connect

    Cha, H.J.; Hedrick, J.; DiPietro, R.A.

    1996-10-01

    Thin polyimide films with dispersed nano-foam morphology have been prepared successfully for the purpose of obtaining low dielectric polymer insulators for microelectronic applications. They were obtained by utilizing triblock copolymers where the thermally stable polyimide component was derived from pyromellitic dianhydride (PMDA) with 1,1-bis(4-aminophenyl)-1-phenyl-2,2,2-trifluroroethane (3F) and thermally labile (polypropylene oxide) (PO) component comprised the outside block of the ABA triblock architecture. The domain shapes in thin films before foaming were irregular due to the non-equilibrium nature of preparation conditions. Final nano-foam shapes and sizes seem very similar to the initial morphology of PO domains. The measured dielectric constant was found to decrease to {approximately}2.3 for the foamed polyimide film with 18% porosity, as compared with ca. 2.9 for the homopolymer, and to remain stable at high temperatures.

  5. Dielectric constant of water in the interface

    NASA Astrophysics Data System (ADS)

    Dinpajooh, Mohammadhasan; Matyushov, Dmitry V.

    2016-07-01

    We define the dielectric constant (susceptibility) that should enter the Maxwell boundary value problem when applied to microscopic dielectric interfaces polarized by external fields. The dielectric constant (susceptibility) of the interface is defined by exact linear-response equations involving correlations of statistically fluctuating interface polarization and the Coulomb interaction energy of external charges with the dielectric. The theory is applied to the interface between water and spherical solutes of altering size studied by molecular dynamics (MD) simulations. The effective dielectric constant of interfacial water is found to be significantly lower than its bulk value, and it also depends on the solute size. For TIP3P water used in MD simulations, the interface dielectric constant changes from 9 to 4 when the solute radius is increased from ˜5 to 18 Å.

  6. Dielectric constant of water in the interface.

    PubMed

    Dinpajooh, Mohammadhasan; Matyushov, Dmitry V

    2016-07-01

    We define the dielectric constant (susceptibility) that should enter the Maxwell boundary value problem when applied to microscopic dielectric interfaces polarized by external fields. The dielectric constant (susceptibility) of the interface is defined by exact linear-response equations involving correlations of statistically fluctuating interface polarization and the Coulomb interaction energy of external charges with the dielectric. The theory is applied to the interface between water and spherical solutes of altering size studied by molecular dynamics (MD) simulations. The effective dielectric constant of interfacial water is found to be significantly lower than its bulk value, and it also depends on the solute size. For TIP3P water used in MD simulations, the interface dielectric constant changes from 9 to 4 when the solute radius is increased from ∼5 to 18 Å. PMID:27394114

  7. Structural origins of high apparent dielectric constants experienced by ionizable groups in the hydrophobic core of a protein

    PubMed Central

    Chimenti, Michael S.; Castaneda, Carlos A.; Majumdar, Ananya; Bertrand Garcia-Moreno, E.

    2012-01-01

    The side chains of Lys-66, Asp-66, and Glu-66 in staphylococcal nuclease (SNase) are fully buried and surrounded mainly by hydrophobic matter, save for internal water molecules associated with carboxylic oxygen atoms. These ionizable side chains titrate with pKa values of 5.7, 8.8 and 8.9, respectively. To reproduce these pKa values with continuum electrostatics calculations the protein has to be treated with high dielectric constants. We have examined structural origins of these high apparent dielectric constants by using NMR spectroscopy to characterize the structural response to the ionization of these internal side chains. Substitution of Val-66 with Lys-66 and Asp-66 led to increased conformational fluctuations in the microenvironments surrounding these groups, even under conditions of pH where Lys-66 and Asp-66 are neutral. When Lys-66, Asp-66 and Glu-66 are charged the proteins remain almost fully folded but resonances for a few backbone amides adjacent to the internal ionizable residues are broadened. This suggests that the ionization of the internal groups promotes a local increase in dynamics on the intermediate timescale, consistent with either partial unfolding or increased backbone fluctuations in helix-1 near residue 66, or, less likely, with increased fluctuations of the charges side chains at position 66. These experiments confirm that the high apparent dielectric constants reported by the internal Lys-66, Asp-66 and Glu-66 reflect localized changes in conformational fluctuations without incurring detectable, global structural reorganization. To improve structure-based pKa calculations in proteins this coupling between ionization of internal groups and local changes in conformational fluctuations will have to be treated explicitly. PMID:21059359

  8. Research & Developments for Millimeter-Wave Dielectric Forsterite with Low Dielectric Constant, High Q, and Zero Temperature Coefficient of Resonant Frequency

    NASA Astrophysics Data System (ADS)

    Tsunooka, Tsutomu; Ando, Minato; Suzuki, Sadahiko; Yasufuku, Yoshitoyo; Ohsato, Hitoshi

    2013-09-01

    Forsterite Mg2SiO4 is a candidate for millimeter-wave dielectrics because of its high Q and low dielectric constant ɛr. Commercial forsterite has been improved with a high Q of 240,000 GHz using high-purity and fine raw materials, and the temperature coefficient of resonant frequency (TCf) can also be adjusted to near-zero ppm/°C by adding 24 wt % rutile compared with that in a previous study. In this study, the TCf, TCɛ, and ɛr of forsterite ceramics with rutile added are studied for the tuning conditions. Zero ppm/°C TCf of the forsterite with 30 and 25 wt % rutile added was achieved at 1200 °C for 2.5 and 2.25 h, respectively. The ɛr values of the near-zero TCf forsterite with 30 and 25 wt % rutile added are 11.3 and 10.2, respectively.

  9. Dielectric constants of soils at microwave frequencies

    NASA Technical Reports Server (NTRS)

    Geiger, F. E.; Williams, D.

    1972-01-01

    A knowledge of the complex dielectric constant of soils is essential in the interpretation of microwave airborne radiometer data of the earth's surface. Measurements were made at 37 GHz on various soils from the Phoenix, Ariz., area. Extensive data have been obtained for dry soil and soil with water content in the range from 0.6 to 35 percent by dry weight. Measurements were made in a two arm microwave bridge and results were corrected for reflections at the sample interfaces by solution of the parallel dielectric plate problem. The maximum dielectric constants are about a factor of 3 lower than those reported for similar soils at X-band frequencies.

  10. RF Field Enhancement with High Dielectric Constant (HDC) Pads in a Receive Array Coil at 3.0 T

    PubMed Central

    Yang, Qing X.; Luo, Wei; Rupprecht, Sebastian; Herse, Zachary; Sica, Christopher; Wang, Jianli; Cao, Zhipeng; Vesek, Jeffrey; Lanagan, Michael T.; Carluccio, Giuseppe; Ryu, Yeun-Chul; Collins, Christopher M.

    2012-01-01

    Purpose To investigate the use of a new high-dielectric constant (HDC) material for improving SNR and transmission efficiency for clinical MRI applications at 3T with cervical spine imaging. Materials and Methods Human subjects were imaged using a commercial cervical spine receive array coil on a clinical system with and without pads containing Barium Titanate beads in deuterium water placed around the neck. Numerical electromagnetic field simulations of the same configuration were also performed. Results Experimental and simulated maps of transmit and receive fields showed greater efficiency for imaging the cervical spine when the pads were present. Experimental measurements showed a significant improvement in SNR with the pads present and an average input power reduction of 46%. Conclusion Use of HDC material can enhance SNR and transmission efficiency for clinical imaging of the cervical spine at 3.0 T. PMID:23293090

  11. Molten salt synthesis of nanocrystalline phase of high dielectric constant material CaCu3Ti4O12.

    PubMed

    Prakash, B Shri; Varma, K B R

    2008-11-01

    Nanocrystalline powders of giant dielectric constant material, CaCu3Ti4O12 (CCTO), have been prepared successfully by the molten salt synthesis (MSS) using KCl at 750 degrees C/10 h, which is significantly lower than the calcination temperature (approximately 1000 degrees C) that is employed to obtain phase pure CCTO in the conventional solid-state reaction route. The water washed molten salt synthesized powder, characterized by X-ray powder diffraction (XRD), Scanning electron microscopy (SEM), and Transmission electron microscopy (TEM) confirmed to be a phase pure CCTO associated with approximately 150 nm sized crystallites of nearly spherical shape. The decrease in the formation temperature/duration of CCTO in MSS method was attributed to an increase in the diffusion rate or a decrease in the diffusion length of reacting ions in the molten salt medium. As a consequence of liquid phase sintering, pellets of as-synthesized KCl containing CCTO powder exhibited higher sinterability and grain size than that of KCl free CCTO samples prepared by both MSS method and conventional solid-state reaction route. The grain size and the dielectric constant of KCl containing CCTO ceramics increased with increasing sintering temperature (900 degrees C-1050 degrees C). Indeed the dielectric constants of these ceramics were higher than that of KCl free CCTO samples prepared by both MSS method and those obtained via the solid-state reaction route and sintered at the same temperature. Internal barrier layer capacitance (IBLC) model was invoked to correlate the observed dielectric constant with the grain size in these samples. PMID:19198302

  12. High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

    NASA Astrophysics Data System (ADS)

    Kim, Seong Keun; Kim, Wan-Don; Kim, Kyung-Min; Hwang, Cheol Seong; Jeong, Jaehack

    2004-11-01

    TiO2 thin films with high dielectric constants (83-100) were grown on a Ru electrode at a growth temperature of 250 °C using the atomic-layer deposition method. The as-deposited films were crystallized with rutile structure. Adoption of O3 with a very high concentration (400g/m3) was crucial for obtaining the rutile phase and the high dielectric constant. The leakage current density of a TiO2 film with an equivalent oxide thickness of 1.0-1.5 nm was 10-6-10-8A/cm2 at ±1V. All these electrical properties were obtained after limited postannealing where the annealing temperature was <500°C, which is crucial to the structural stability of the Ru electrode. Therefore, these TiO2 films are very promising as the capacitor dielectrics of dynamic random access memories. TiO2 films grown on a bare Si wafer or Pt electrode by the same process had anatase structure and a dielectric constant of ˜40.

  13. Benchmarking density functional perturbation theory to enable high-throughput screening of materials for dielectric constant and refractive index

    NASA Astrophysics Data System (ADS)

    Petousis, Ioannis; Chen, Wei; Hautier, Geoffroy; Graf, Tanja; Schladt, Thomas D.; Persson, Kristin A.; Prinz, Fritz B.

    2016-03-01

    We demonstrate a high-throughput density functional perturbation theory (DFPT) methodology capable of screening compounds for their dielectric properties. The electronic and ionic dielectric tensors are calculated for 88 compounds, where the eigenvalues of the total dielectric tensors are compared with single crystal and polycrystalline experimental values reported in the literature. We find that GGA/PBE has a smaller mean average deviation from experiments (MARD=16.2 %) when compared to LDA. The prediction accuracy of DFPT is lowest for compounds that exhibit complex structural relaxation effects (e.g., octahedra rotation in perovskites) and/or strong anharmonicity. Despite some discrepancies between DFPT results and reported experimental values, the high-throughput methodology is found to be useful in identifying interesting compounds by ranking. This is demonstrated by the high Spearman correlation factor (ρ =0.92 ). Finally, we demonstrate that DFPT provides a good estimate for the refractive index of a compound without calculating the frequency dependence of the dielectric matrix (MARD=5.7 %).

  14. BOREAS RSS-17 Dielectric Constant Profile Measurements

    NASA Technical Reports Server (NTRS)

    Hall, Forrest G. (Editor); Nickeson, Jaime (Editor); McDonald, Kyle C.; Zimmerman, Reiner; Way, JoBea

    2000-01-01

    The BOREAS RSS-17 team acquired and analyzed imaging radar data from the ESA's ERS-1 over a complete annual cycle at the BOREAS sites in Canada in 1994 to detect shifts in radar backscatter related to varying environmental conditions. This data set consists of dielectric constant profile measurements from selected trees at various BOREAS flux tower sites. The relative dielectric constant was measured at C-band (frequency = 5 GHz) as a function of depth into the trunk of three trees at each site, Measurements were made during April 1994 with an Applied Microwave Corporation field PDP fitted with a 0.358-cm (0.141-inch) diameter coaxial probe tip. The data are available in tabular ASCII files. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Active Archive Center (DAAC).

  15. Dielectric Constant Measurements for Characterizing Lunar Soils

    NASA Technical Reports Server (NTRS)

    Anderson, Robert C.; Buehler, M.; Seshadri, S.; Kuhlman, G.; Schaap, M.

    2005-01-01

    The return to the Moon has ignited the need to characterize the lunar regolith using fast, reliable in-situ methods. Characterizing the physical properties of the rocks and soils can be very difficult because of the many complex parameters that influence the measurements. In particular, soil electrical property measurements are influenced by temperature, mineral type, grain size, porosity, and soil conductivity. Determining the dielectric constant of lunar materials may be very important in providing quick characterization of surface deposits, especially for the Moon. A close examination of the lunar regolith samples collected by the Apollo astronauts indicates that the rocks and soils on the Moon are dominated by silicates and oxides. In this presentation, we will show that determining the dielectric constant measurements can provide a simple, quick detection method for minerals that contain titanium, iron, and water. Their presence is manifest by an unusually large imaginary permittivity.

  16. Laboratory measurement of the complex dielectric constant of soils

    NASA Technical Reports Server (NTRS)

    Wiebe, M. L.

    1971-01-01

    The dielectric constant of a material is an extremely important parameter when considering passive radiometric remote sensing applications. This is because the emitted energy measured by a microwave radiometer is dependent on the dielectric constant of the surface being scanned. Two techniques of measuring dielectric constants are described. The first method involves a dielectric located in air. The second method uses basically the same theoretical approach, but the dielectric under consideration is located inside a section of waveguide.

  17. Dielectric Constant of Suspensions of Blood Cells

    NASA Astrophysics Data System (ADS)

    Mendelson, Kenneth; Ackmann, James

    1996-03-01

    Measurements of the complex dielectric constant of suspensions of blood cells have recently been reported by Ackmann, et al.(J. J. Ackmann, et al., Ann. Biomed. Eng. 24), 58 (1996). At frequencies below 100 kHz, the real part of the dielectric constant (ɛ') goes through a maximum at a blood cell volume fraction of about 70%. Effective medium approximations do not agree well with this behavior. As a more realistic model, we are studying the grain consolidation model of Roberts and Schwartz(J. N. Roberts and L. M. Schwartz, Phys. Rev. B 31), 5990 (1985). We have used a finite element method to calculate the dielectric constant of this model for a cubic array of spheres. The simulations agree remarkably well with experiment. They suggest, however, that ɛ' may be showing oscillations rather than a simple maximum. Comparison of the simulated and experimental points suggests that this is not an artifact of the periodic array used in the model. Furthermore the simulations indicate that the maximum (or oscillations) disappears at low conductivities of the suspending fluid.

  18. Determination of High-Frequency Dielectric Constant and Surface Potential of Graphene Oxide and Influence of Humidity by Kelvin Probe Force Microscopy.

    PubMed

    Salomão, Francisco C; Lanzoni, Evandro M; Costa, Carlos A; Deneke, Christoph; Barros, Eduardo B

    2015-10-20

    We use Kelvin probe force microscopy (KPFM) and capacitance coupling (dC/dz) to study the electrical properties of graphene oxide (GO). We propose using the dC/dz signal to probe the high frequency dielectric constant of mono- and few-layer GO. Our measurements suggest that the dynamic dielectric constant of GO is on the order of εGO ≅ 3.0 ε0, in the high frequency limit, and independent of the number of GO layers. The measurements are performed at a humidity controlled environment (5% of humidity). The effects of increasing humidity on both the dC/dz and KPFM measurements are analyzed. PMID:26393406

  19. Dielectric constants of soils at microwave frequencies-2

    NASA Technical Reports Server (NTRS)

    Wang, J.; Schmugge, T.; Williams, D.

    1978-01-01

    The dielectric constants of several soil samples were measured at frequencies of 5 and 19 GHz using the infinite transmission line method. The results of these measurements are presented and discussed with respect to soil types and texture structures. A comparison is made with other measurements at 1.4 GHz. At all three frequencies, the dependence of dielectric constant on soil moisture can be approximated by two straight lines. At low moisture, the slope is less than at high moisture level. The intersection of the two lines is believed to be a function of soil texture.

  20. Development of new polymers with ultra-low dielectric constant using gaseous CO2

    NASA Astrophysics Data System (ADS)

    Keshtov, Mukhamed; Said-Galiev, Ernest; Khokhlov, Alexei

    2012-07-01

    Fluorphenylsubstituted Polyphenylenes with low dielectric constant have been synthesized and following exposition of their films in gaseous CO2 and then fast heating at the temperature of 250-280°C give rise to high dielectric properties with dielectric constant of 1.58.

  1. Simple liquid models with corrected dielectric constants.

    PubMed

    Fennell, Christopher J; Li, Libo; Dill, Ken A

    2012-06-14

    Molecular simulations often use explicit-solvent models. Sometimes explicit-solvent models can give inaccurate values for basic liquid properties, such as the density, heat capacity, and permittivity, as well as inaccurate values for molecular transfer free energies. Such errors have motivated the development of more complex solvents, such as polarizable models. We describe an alternative here. We give new fixed-charge models of solvents for molecular simulations--water, carbon tetrachloride, chloroform, and dichloromethane. Normally, such solvent models are parametrized to agree with experimental values of the neat liquid density and enthalpy of vaporization. Here, in addition to those properties, our parameters are chosen to give the correct dielectric constant. We find that these new parametrizations also happen to give better values for other properties, such as the self-diffusion coefficient. We believe that parametrizing fixed-charge solvent models to fit experimental dielectric constants may provide better and more efficient ways to treat solvents in computer simulations. PMID:22397577

  2. Method for rapidly determining the swelling-clay content in shales and shaly sandstone formations by high-frequency dielectric constant measurements

    SciTech Connect

    Kroeger, M.K.; Longo, J.M.; Steiger, R.P.; Leung, P.K.

    1989-10-24

    This patent describes a method for measuring the swelling-clay content of earth formations by dielectric measurements. It comprises: grinding a sample of the earth formation to a size suitable for testing; washing the sample with a fluid having a water activity substantially less than that of water; packing the washed sample into a sample cell suitable for dielectric measurement; measuring the dielectric constant of the washed sample at a preselected frequency; and comparing the measured dielectric constant of the rock sample to a calibration curve, to determine the swelling-clay content of the earth formation.

  3. Novel Low Temperature Co-Fired Ceramic Material System Composed of Dielectrics with Different Dielectric Constants

    NASA Astrophysics Data System (ADS)

    Sakamoto, Sadaaki; Adachi, Hiroshige; Kaneko, Kazuhiro; Sugimoto, Yasutaka; Takada, Takahiro

    2013-09-01

    We found that the co-firing low temperature co-fired ceramic (LTCC) materials of different dielectric constants (ɛr) with Cu wiring is achievable using a novel, original design. It was confirmed that the dielectric characteristics of the dielectrics designed in this study are very suitable for the use of the dielectrics in electronic components such as filters mounted in high-speed radio communication equipment. The dielectric constants of the lower- and higher-dielectric-coefficient materials were 8.1 and 44.5, respectively, which are sufficiently effective for downsizing LTCC components. Observing the co-fired interface, it was confirmed that excellent co-firing conditions resulted in no mechanical defects such as delamination or cracks. On the basis of the results of wavelength dispersive X-ray spectrometry (WDX) and X-ray diffractometry (XRD), it was confirmed that co-firing with minimal interdiffusion was realized using the same glass for both dielectrics. It is concluded that the materials developed are good for co-firing in terms of the mechanical defects and interdiffusion that appear in them.

  4. Computing the dielectric constant of liquid water at constant dielectric displacement

    NASA Astrophysics Data System (ADS)

    Zhang, Chao; Sprik, Michiel

    2016-04-01

    The static dielectric constant of liquid water is computed using classical force field based molecular dynamics simulation at fixed electric displacement D . The method to constrain the electric displacement is the finite-temperature classical variant of the constant D method developed by Stengel, Spaldin, and Vanderbilt [Nat. Phys. 5, 304 (2009), 10.1038/nphys1185]. There is also a modification of this scheme imposing fixed values of the macroscopic field E . The method is applied to the popular SPC/E model of liquid water. We compare four different estimates of the dielectric constant, two obtained from fluctuations of the polarization at D =0 and E =0 and two from the variation of polarization with finite D and E . It is found that all four estimates agree when properly converged. The computational effort to achieve convergence varies, however, with constant D calculations being substantially more efficient. We attribute this difference to the much shorter relaxation time of longitudinal polarization compared to transverse polarization accelerating constant D calculations.

  5. Microwave-Assisted Synthesis of High Dielectric Constant CaCu3Ti4O12 from Sol-Gel Precursor

    NASA Astrophysics Data System (ADS)

    Ouyang, Xin; Cao, Peng; Huang, Saifang; Zhang, Weijun; Huang, Zhaohui; Gao, Wei

    2015-07-01

    CaCu3Ti4O12 (CCTO) powders derived from sol-gel precursors were calcined and sintered via microwave radiation. The obtained CCTO powders were compared with that obtained via a conventional heating method. For microwave heating, 89.1 wt.% CCTO was achieved from the sol-gel precursor, after only 17 min at 950°C. In contrast, the conventional calcination method required 3 h to generate 87.6 wt.% CCTO content at 1100°C. In addition, the CCTO powders prepared through 17 min of microwave calcination exhibited a small particle size distribution of D50 = 3.826 μm. It was found that a lengthy hold time of 1 h by microwave sintering is required to obtain a high dielectric constant (3.14 × 103 at 102 Hz) and a reasonably low dielectric loss (0.161) in the sintered CCTO ceramic. Based upon the distinct microstructures, the dielectric responses of the CCTO samples sintered by different methods are attributed to space charge polarization and internal barrier layer capacitor mechanism.

  6. Low Dielectric Constant Materials from Hollow Fibers and Plant Oil

    NASA Astrophysics Data System (ADS)

    Hong, Chang K.; Wool, Richard P.

    2003-03-01

    A new low dielectric constant (k) material suited to electronic materials applications was developed using hollow keratin fibers (HF) and chemically modified soyoil. High-speed microelectronics are facilitated by preventing the ``rubber necking", or slow-down of electrons on the printed wires through the use of low-k dielectrics. The unusual low k-value of the HF composite material derives both from the air (k = 1) in the hollow microcrystalline keratin fibers (k = 1.6), and the triglyceride molecules (k = 2.3), and is in the range of 1.7 to 2.7 at 100 MHz, depending on the HF fraction. These values are lower than that of the conventional silicon dioxide, (k = 3.8 to 4.2) or epoxy dielectric insulators. Also, the HF dielectric is lightweight (SG < 1) and rigid (Modulus > 2 GPa), with fracture toughness (1.0 MPa m^1/2) (and approximates the shape and feel of a silicon dioxide insulator. Multi-Chip-Module circuit printing results suggest that the low-cost composite made with HF (from avian sources) and plant oil (from soybean) has the potential to replace the dielectric in microchips and circuit boards in the ever-growing electronic materials field, in addition to many applications as a new lightweight composite material. Supported by EPA and DoE

  7. Thermal conductivity and dielectric constant of silicate materials

    NASA Technical Reports Server (NTRS)

    Simon, I.; Wechsler, A. E.

    1968-01-01

    Report on the thermal conductivity and dielectric constant of nonmetallic materials evaluates the mechanisms of heat transfer in evacuated silicate powders and establishes the complex dielectric constant of these materials. Experimental measurements and results are related to postulated lunar surface materials.

  8. Science and technology of thin films and interfacial layers in ferroelectric and high-dielectric constant heterostructures and application to devices.

    SciTech Connect

    Auciello, O.; Materials Science Division

    2006-01-01

    The fabrication of the next generation of complex oxide thin film-based micro and nanoscale devices, such as, for example, low and high density nonvolatile ferroelectric random access memories (FeRAMS), high-dielectric constant (K) high-frequency devices, and the next generation of complimentary metal oxide semiconductor (CMOS) nanoscale devices based on high-K dielectrics, require understanding and control of film growth and interface processes as well as development of materials integration strategies with atomic scale control. In recent years, we developed and applied a unique combination of integrated film synthesis/in situ characterization and ex situ analytical techniques capable of providing information about thin film surface and interface processes at the atomic scale as required for the development of the devices mentioned above. These techniques are also useful for establishing composition-microstructure-property relationships critical for the integration of oxide thin films with semiconductor device platforms for the development of a whole new generation of micro and nanodevices based on film technologies beyond semiconductors and specifically silicon. Our recent work has been focused on developing diffusion barrier layers and heterostructured bottom electrodes that play a critical role in high-density FeRAM integration. We demonstrated that TiAl layers can be used as a material with a double diffusion barrier/bottom electrode functionality for integration of ferroelectric capacitors CMOS devices for fabrication of FeRAMs. We also demonstrated that control of interfaces is critical to the integration of high-K dielectric films with appropriate substrates for the fabrication of high-performance high-frequency devices, and here again a diffusion barrier such as the TiAl layer developed by our group is critical for such integration. These studies revealed that when properly oxidized, nanoscale thick amorphous Ti-Al-O layers exhibit properties that make

  9. High Dielectric Constants of Composites of Fiber-Like Copper Phthalocyanine-Coated Graphene Oxide Embedded in Poly(arylene Ether Nitriles)

    NASA Astrophysics Data System (ADS)

    Li, Jingwei; Pu, Zejun; Wang, Zicheng; Long, Ya; Jia, Kun; Liu, Xiaobo

    2015-07-01

    The surfaces of graphene oxide (GO) sheets were coated with fiber-like copper phthalocyanine (CuPc) by use of a solvothermal process. The product, GO@ CuPc, was used as a filler in high-performance poly(arylene ether nitrile) (PEN) composites. Films of the composites had high thermal stability, and glass-transition temperatures in the range 170-182°C. Thermogravimetric analysis revealed their initial decomposition temperatures were in the range 470-483°C. Scanning electron microscopy showed that dispersion of GO@ CuPc in PEN was much better than that of unmodified GO; this can be attributed to relatively strong interaction between GO@CuPc and the PEN matrix. All the composite films were highly flexible and had enhanced mechanical properties. Tensile strengths of the composites were as high as 89 MPa in the presence of 1 wt.% GO@CuPc, an increase of 20% compared with pure PEN film. Dielectric constants of the composite films were as high as 52 at 100 Hz when the GO@CuPc content was 5%. Because of these excellent mechanical and dielectric properties, PEN/GO@CuPc composites have much potential for use as film capacitors.

  10. Role of dielectric constant in electrohydrodynamics of conducting fluids

    NASA Technical Reports Server (NTRS)

    Rhodes, Percy H.; Snyder, Robert S.; Roberts, Glyn O.

    1992-01-01

    Electrohydrodynamic (EHD) flows are driven by the interaction of an electric field with variations in electric conductivity or dielectric constant. In reported EHD experiments on the deformation of drops of immiscible dielectric fluids, the role of conductivity has tended to overshadow the role of dielectric constant. Often, large conductivity contrasts were convenient because the conductivities of the dielectric fluid were relatively uncertain. As a result, the observed effects were always qualitatively the same as if there had been no contrast in dielectric constant. Our early experiments studying the EHC deformations of cylindrical streams readily showed the conductivity effect but the dielectric constant effect was not discernible. We have modified our flow chamber and improved our method of observation and can now see an unequivocal dielectric constant effect which is in agreement with the prior theory. In this paper we first give a brief description of the physics of charge buildup at the interface of an immersed spherical drop or flowing cylindrical sample stream and then show how these charge distributions lead to interface distortions and accompanying viscous flows which constitute EHD. We next review theory and experiment describing the deformation of spherical drops. We show that in the reported drop deformation experiments, the contrast in dielectric constant was never sufficient to reverse the deformation due to the conductivity contrast. We review our work describing the deformation of a cylindrical stream of one fluid flowing in a parallel flow of another, and we compare the deformation equations with those for spherical drops. Finally, we show a definite experimental dielectric constant effect for cylindrical stream of aqueous polystyrene latex suspension. The dielectric constant varies with the frequency of the imposed electric field, and the associated EHD flow change is very apparent.

  11. Role of dielectric constant in electrohydrodynamics of conducting fluids

    NASA Astrophysics Data System (ADS)

    Rhodes, Percy H.; Snyder, Robert S.; Roberts, Glyn O.

    Electrohydrodynamic (EHD) flows are driven by the interaction of an electric field with variations in electric conductivity or dielectric constant. In reported EHD experiments on the deformation of drops of immiscible dielectric fluids, the role of conductivity has tended to overshadow the role of dielectric constant. Often, large conductivity contrasts were convenient because the conductivities of the dielectric fluid were relatively uncertain. As a result, the observed effects were always qualitatively the same as if there had been no contrast in dielectric constant. Our early experiments studying the EHC deformations of cylindrical streams readily showed the conductivity effect but the dielectric constant effect was not discernible. We have modified our flow chamber and improved our method of observation and can now see an unequivocal dielectric constant effect which is in agreement with the prior theory. In this paper we first give a brief description of the physics of charge buildup at the interface of an immersed spherical drop or flowing cylindrical sample stream and then show how these charge distributions lead to interface distortions and accompanying viscous flows which constitute EHD. We next review theory and experiment describing the deformation of spherical drops. We show that in the reported drop deformation experiments, the contrast in dielectric constant was never sufficient to reverse the deformation due to the conductivity contrast. We review our work describing the deformation of a cylindrical stream of one fluid flowing in a parallel flow of another, and we compare the deformation equations with those for spherical drops. Finally, we show a definite experimental dielectric constant effect for cylindrical stream of aqueous polystyrene latex suspension. The dielectric constant varies with the frequency of the imposed electric field, and the associated EHD flow change is very apparent.

  12. Let's Measure the Dielectric Constant of a Piece of Paper!

    ERIC Educational Resources Information Center

    Karlow, Edwin A.

    1991-01-01

    Described is a simple circuit with which students can observe the effect of common dielectric materials in a capacitor and measure the dielectric constant of a piece of paper. Discussed are the theory, apparatus construction, and experimental procedures for this activity. (CW)

  13. ac conductivity and dielectric constant of conductor-insulator composites

    NASA Astrophysics Data System (ADS)

    Murtanto, Tan Benny; Natori, Satoshi; Nakamura, Jun; Natori, Akiko

    2006-09-01

    We study the complex admittance (ac conductivity and dielectric constant) of conductor-insulator composite material, based on a two-dimensional square network consisting of randomly placed conductors and capacitors. We derived some exact analytical relations between the complex admittances of high and low frequencies and of complementary conductor concentrations. We calculate the complex admittance by applying a transfer-matrix method to a square network and study the dependence on both the frequency and the conductor concentration. The numerical results are compared with an effective-medium theory, and the range of applicability and limitation of the effective-medium theory are clarified.

  14. Dielectric constant well logging with current and voltage electrodes

    SciTech Connect

    Hoyer, W.A.; Kern, J.W.; Spann, M.M.

    1982-11-30

    This invention provides for methods and systems for measuring the dielectric constant of an earth formation. In a preferred embodiment, an alternating current is passed through a portion of the formation and a reference resistor in series with the portion. The capacitance and the dielectric constant of the portion may be determined from the phase difference between the voltage across the reference resistor and the voltage across the portion. This phase difference may be obtained by generating a voltage which is in phase with the voltage across the reference resistor, but which has the magnitude of the voltage across the portion. To obtain the phase difference by an alternate digital method, the voltage across the referenced resistor and the voltage across the portion are each transformed into a square wave signal. The two square wave signals are then compared to obtain the sign and the magnitude of the phase difference between the two square waves. In an alternate preferred embodiment, an alternating current is passed through the portion of the earth formation and through a capacitor and a resistor connected in series with the portion. The first dc signal is generated by filtering out the high frequency components from the product of the voltages across the capacitor and across the portion. A second dc signal is generated by filtering out the high frequency components from the product of the voltages across the referenced resistor and across the portion. The phase difference between the voltage across the portion and the current through the portion may be determined, from which the capacitance and the dielectric constant of the portion may then be calculated.

  15. Dielectric constant of liquid alkanes and hydrocarbon mixtures

    NASA Technical Reports Server (NTRS)

    Sen, A. D.; Anicich, V. G.; Arakelian, T.

    1992-01-01

    The complex dielectric constants of n-alkanes with two to seven carbon atoms have been measured. The measurements were conducted using a slotted-line technique at 1.2 GHz and at atmospheric pressure. The temperature was varied from the melting point to the boiling point of the respective alkanes. The real part of the dielectric constant was found to decrease with increasing temperature and correlate with the change in the molar volume. An upper limit to all the loss tangents was established at 0.001. The complex dielectric constants of a few mixtures of liquid alkanes were also measured at room temperature. For a pentane-octane mixture the real part of the dielectric constant could be explained by the Clausius-Mosotti theory. For the mixtures of n-hexane-ethylacetate and n-hexane-acetone the real part of the dielectric constants could be explained by the Onsager theory extended to mixtures. The dielectric constant of the n-hexane-acetone mixture displayed deviations from the Onsager theory at the highest fractions of acetone. The dipole moments of ethylacetate and acetone were determined for dilute mixtures using the Onsager theory and were found to be in agreement with their accepted gas-phase values. The loss tangents of the mixtures exhibited a linear relationship with the volume fraction for low concentrations of the polar liquids.

  16. Measurement of the dielectric function spectra of low dielectric constant using the spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Horie, Masahiro; Postava, Kamil; Yamaguchi, Tomuo; Akashika, Kumiko; Hayashi, Hideki; Kitamura, Fujikazu

    2003-05-01

    The dielectric function spectra of low dielectric constants (low-k) materials have been determined using spectroscopic ellipsometry, normal incidence spectroscopic reflectometry, and Fourier transform infrared transmission spectrometry over a wide spectral range from 0.03 to 5.4 eV (230nm to 40.5um wavelength region). The electric and ionic contributions to the overall static dielectric constants were determined for representative materials used in the semiconductor industry for interlayer dielectrics: (1) FLARE - organic spin-on polymer, (2) HOSP - spin-on hybrid organic-siloxane polymer from the Honeywell Electric Materials Company, and (3) SiLK- organic dielectric resin from the Dow Chemical Company. The main contributions to the static dielectric constant of the low-k materials studied were found to be the electric and ionic absorption.

  17. PECVD of low-dielectric constant films for ULSI

    NASA Astrophysics Data System (ADS)

    Shimogaki, Yukihiro

    1998-10-01

    We studied the reduction mechanism of the dielectric constant of F-doped silicon oxide films prepared by PECVD from SiH_4/N_2O/CF4 mixture. From the estimation of the dielectric constant at various frequencies, ranging from 1MHz to 100THz, using CV measurement, Kramers-Kronig relation and the square of the refractive index, we suggest that the dielectric constant due to ionic and electronic polarization is not the dominant factor in decreasing the dielectric constant. It is important to remove -OH in films to obtain very low dielectric constant F-doped silicon oxide films, because Si-OH is the main factor of the orientational polarization in silicon oxide films made by PECVD. To investigate the reaction mechanism which controls the film structure, we changed the residence time of gas in chamber by varying the flow rate. When the residence time in chamber decreases, the film deposition rate increases. We tried to explain flow rate dependency of the deposition rate using a simple CSTR (continuous stirred tank reactor) model. It can be concluded that there are two paths to deposit the films. One route is a deposition by the precursors with poor step coverage profile, and the other route is deposition through intermediates formed by gas phase reactions that contribute to have better step coverage. The overall gas phase reaction rate constant was estimated from these kinetic studies. Same approach was also carried out on the PECVD of C:F film deposition.

  18. Metal Decorated Multi-Walled Carbon Nanotube/Polyimide Composites with High Dielectric Constants and Low Loss Factors

    NASA Technical Reports Server (NTRS)

    Ghose, Sayata; Watson, Kent A.; Dudley, Kenneth L.; Elliott, Holly A.; Smith, Joseph G.; Connell, John W.

    2009-01-01

    The measurement of observable electromagnetic phenomena in materials and their derived intrinsic electric material properties are of prime importance in the discovery and development of material systems for electronic and aerospace applications. Nanocomposite materials comprised of metal decorated multi-walled carbon nanotubes (MWCNTs) were prepared by a facile method and characterized. Metal particles such as silver, platinum and palladium with diameters ranging from less than 5 to over 50 nanometers were distributed randomly on the MWCNTs. The metal-containing MWCNTs were then melt mixed into a polymer matrix and the mixture extruded as ribbons. These extruded ribbons exhibited a moderate to high degree of MWCNT alignment as determined by HRSEM. These ribbons were then fabricated into test specimens while maintaining MWCNT alignment and subsequently characterized for electromagnetic properties at 8-12 GHz. The present study is focused on silver decorated MWCNTs dispersed in an Ultem polyimide matrix. The results of the electromagnetic characterization showed that certain sample configurations exhibited a decoupling of the permittivity and loss factor (?? and ??) indicating that these properties could be tailored within certain limits. The decoupling and independent control of these fundamental electrical material parameters offer a new class of materials with potential applications in electronics, microwave engineering and optics.

  19. Metal Decorated Multi-Walled Carbon Nanotube/Polyimide Composites with High Dielectric Constants and Low Loss Factors

    NASA Technical Reports Server (NTRS)

    Elliott, Holly A.; Dudley, Kenneth L.; Smith, Joseph G.; Connell, John W.; Ghose, Sayata; Watson, Kent A.; Sun, Keun J.

    2009-01-01

    The measurement of observable electromagnetic phenomena in materials and their derived intrinsic electrical material properties are of prime importance in the discovery and development of material systems for electronic and aerospace applications. Nanocomposite materials comprised of metal decorated multi-walled carbon nanotubes (MWCNTs) were prepared by a facile method and characterized. Metal particles such as silver(Ag), platinum(Pt) and palladium(Pd) with diameters ranging from less than 5 to over 50 nanometers were distributed randomly on the MWCNTs. The present study is focused on silver decorated MWCNTs dispersed in a polyimide matrix. The Ag-containing MWCNTs were melt mixed into Ultem(TradeMark) and the mixture extruded as ribbons. The extruded ribbons exhibited a moderate to high degree of MWCNT alignment as determined by HRSEM. These ribbons were then fabricated into test specimens while maintaining MWCNT alignment and subsequently characterized for electrical and electromagnetic properties at 8-12 GHz. The results of the electromagnetic characterization showed that certain sample configurations exhibited a decoupling of the permittivity (epsilon ) and loss factor (epsilon") indicating that these properties could be tailored within certain limits. The decoupling and independent control of these fundamental electrical material parameters offers a new class of materials with potential applications in electronics, microwave engineering and optics.

  20. Radiolysis of liquids with high static dielectric constant: An estimate of the total ionization yield, electron thermalization distance, and contribution of heterogeneous reactions

    SciTech Connect

    Ferradini, C.; Jay-Gerin, J.

    1988-12-01

    In a previous study, we found an exponential dependence of the free-ion yield (G/sub fi/) on the static dielectric constant (epsilon/sub s/) for a number of irradiated liquids with epsilon/sub s/>10. On the basis of this study, we develop here a simple model by which we quantitatively estimate the total ionization yield (G/sub tot/), the most probable electron thermalization distance (b), and the yield of solvated electrons that are removed by diffusion-controlled reactions during spur expansion (G/sub dif/). Using solvated electron yields available in the literature, we get G/sub tot/approx. =6.6 mol/100 eV (value nearly independent of the nature of the liquid) and bapprox. =29 A at 298 K. b is found not to depend appreciably on epsilon/sub s/ which indicates that the Coulomb attractive force between the ion and secondary electron is practically inefficient before electron thermalization occurs. The evaluation of G/sub dif/ teaches us that spur reactions have a profound influence in the fate of ion pairs formed during radiolysis of liquids of high epsilon/sub s/ values.

  1. Advanced concepts for transformers pressboard dielectric constant and mechanical strength

    SciTech Connect

    Not Available

    1982-03-01

    Of the numerous electrical considerations in a material, the value of the dielectric constant serves as an important criterion in designing proper insulation systems. The goal of this project was to find ways to reduce the dielectric constant of solid (fibrous) insulating materials. A literature search was made on cellulosic and synthetic fibers and also additives which offered the potential for dielectric constant reduction of the solid insulation. Sample board structures, were produced in the laboratory and tested for electrical, mechanical and chemical characteristics. Electrical tests determined the suitability of the material at transformer test and operating conditions. The mechanical tests established the physical characteristics of the modified board structures. Chemical tests checked the conductivity of the aqueous extract, acidity, and ash content. Further, compatibility with transformer oil and some aging tests were performed. An actual computer transformer design was made based on one of the modified board structures and the reduction in core steel and transformer losses were shown.

  2. Measurements of the dielectric constants for planetary volatiles

    NASA Technical Reports Server (NTRS)

    Anicich, Vincent G.; Huntress, Wesley T., Jr.

    1987-01-01

    The model of Titan at present has the surface temperature, pressure, and composition such that there is a possibility of a binary ethane-methane ocean. Proposed experiments for future Titan flybys include microwave mappers. Very little has been measured of the dielectric properties of the small hydrocarbons at these radar frequencies. An experiment was conducted utilizing a slotted line to measure the dielectric properties of the hydrocarbons, methane to heptane, from room temperature to -180 C. Measurements of the real part of the dielectric constants are accurate to + or - 0.006 and the imaginary part (the loss tangent) of the liquids studied is less than or equal to 0.001. In order to verify this low loss tangent, the real part of the dielectric constant of hexane at 25 C was studied as a function of the frequency range of the slotted line system used. The dielectric constant of hexane at room temperature, between 500 MHz and 3 MHz, is constant within experimental error.

  3. Microwave dielectric constants of silicon, gallium arsenide, and quartz

    SciTech Connect

    Seeger, K.

    1988-06-01

    For a determination of the dielectric constants epsilon of semiconductors, a microwave transmission interference method has been applied. For the first time, a calculation is presented which yields the full interference spectrum, not only the position of the extremal points. A comparison of the theoretical and experimental spectra results in a higher precision than previously obtained. A metal evaporation of the sample faces which are in contact with the waveguide walls turns out to be very important. Relative dielectric constants of 11.6 for silicon, 12.8 for gallium arsenide, and 4.6 for crystalline quartz, all +- 0.05, have been obtained.

  4. Remote Sensing of Salinity: The Dielectric Constant of Sea Water

    NASA Technical Reports Server (NTRS)

    LeVine, David M.; Lang, R.; Utku, C.; Tarkocin, Y.

    2011-01-01

    Global monitoring of sea surface salinity from space requires an accurate model for the dielectric constant of sea water as a function of salinity and temperature to characterize the emissivity of the surface. Measurements are being made at 1.413 GHz, the center frequency of the Aquarius radiometers, using a resonant cavity and the perturbation method. The cavity is operated in a transmission mode and immersed in a liquid bath to control temperature. Multiple measurements are made at each temperature and salinity. Error budgets indicate a relative accuracy for both real and imaginary parts of the dielectric constant of about 1%.

  5. Dielectric relaxation of high-k oxides

    PubMed Central

    2013-01-01

    Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics. For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material. It was attributed to the enhancement of the correlations among polar nanodomain. The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary. PMID:24180696

  6. Novel Materials with Effective Super Dielectric Constants for Energy Storage

    NASA Astrophysics Data System (ADS)

    Cortes, Francisco Javier Quintero; Phillips, Jonathan

    2015-05-01

    To test a theory of the recently discovered phenomenon of super dielectric behavior at very low frequency, the dielectric constants of several `pastes', composed of porous alumina powders filled to the point of incipient wetness with water containing dissolved sodium chloride, were measured. The effective dielectric low frequency constants of some of the pastes were greater than 1010, dramatically higher than that of any material ever reported. Moreover, the total energy density reported for one capacitor generated with NaCl-based super dielectric material is marginally higher than found in any prior report. These results are consistent with this recently postulated model of low frequency super dielectric behavior in porous, non-conductive materials saturated with ion-containing liquids: upon the application of an electric field, ions dissolved in the saturating liquid contained in the pores will travel to the ends of pore-filling liquid droplets creating giant dipoles. The fields of these giant dipoles oppose the applied field, reducing the net field created per unit of charge on the capacitor plates, effectively increasing charge/voltage ratio, hence capacitance. This is simply a version of the theory of `polarizable media' found in most classic texts on electromagnetism. Other observations reported here include (1) the impact of ion concentration on dielectric values, (2) a maximum voltage similar to that associated with the electrical breakdown of water, (3) the loss of capacitance upon drying, (4) the recovery of capacitance upon the addition of water to a dry super dielectric material, and (5) the linear relationship between capacitance and inverse thickness. All observations are consistent with the earlier proposed model of the super dielectric phenomenon. An extrapolation of results suggests this technology can lead to energy density greater than the best lithium-ion battery.

  7. Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics

    SciTech Connect

    Zheng, H.; Shohet, J. L.; Ryan, E. T.; Nishi, Y.

    2014-11-17

    Vacuum ultraviolet (VUV) irradiation is generated during plasma processing in semiconductor fabrications, while the effect of VUV irradiation on the dielectric constant (k value) of low-k materials is still an open question. To clarify this problem, VUV photons with a range of energies were exposed on low-k organosilicate dielectrics (SiCOH) samples at room temperature. Photon energies equal to or larger than 6.0 eV were found to decrease the k value of SiCOH films. VUV photons with lower energies do not have this effect. This shows the need for thermal heating in traditional ultraviolet (UV) curing since UV light sources do not have sufficient energy to change the dielectric constant of SiCOH and additional energy is required from thermal heating. In addition, 6.2 eV photon irradiation was found to be the most effective in decreasing the dielectric constant of low-k organosilicate films. Fourier Transform Infra-red Spectroscopy shows that these 6.2 eV VUV exposures removed organic porogens. This contributes to the decrease of the dielectric constant. This information provides the range of VUV photon energies that could decrease the dielectric constant of low-k materials most effectively.

  8. Temperature and moisture dependence of dielectric constant for silica aerogels

    SciTech Connect

    Hrubesh, L.H., LLNL

    1997-03-01

    The dielectric constants of silica aerogels are among the lowest measured for any solid material. The silica aerogels also exhibit low thermal expansion and are thermally stable to temperatures exceeding 500{degrees}C. However, due to the open porosity and large surface areas for aerogels, their dielectric constants are strongly affected by moisture and temperature. This paper presents data for the dielectric constants of silica aerogels as a function of moisture content at 25{degrees}C, and as a function of temperature, for temperatures in the range from 25{degrees}C to 450{degrees}C. Dielectric constant data are also given for silica aerogels that are heat treated in dry nitrogen at 500{degrees}C, then cooled to 25{degrees}C for measurements in dry air. All measurements are made on bulk aerogel spheres at 22GHz microwave frequency, using a cavity perturbation method. The results of the dependence found here for bulk materials can be inferred to apply also to thin films of silica aerogels having similar nano-structures and densities.

  9. High-index dielectric substrates with nearly constant reflectance for incident unpolarized or circularly polarized light over a wide range of incidence angles

    NASA Astrophysics Data System (ADS)

    Azzam, R. M. A.

    2015-06-01

    Dielectric substrates with refractive indices in the range n1 ≤ n ≤ n2, ? and ? exhibit nearly constant reflectance for incident unpolarized or circularly polarized light Ru(ϕ) over a wide range of incidence angle ϕ. For ?, Ru(ϕ) increases monotonically from ? at normal incidence by only 0.06% at ϕ = 45° and 1% at ϕ = 60°. For n2 = 4.6116, ? at the Brewster angle ϕB = 77.77° and the normalized reflectance shift |(Ru - R0)/R0| is constant reflectance for incident unpolarized light over a wide range of incidence angles at IR and visible wavelengths.

  10. Dielectric constant, dielectric virial coefficients, and dipole moments of 1,1,1,2-tetrafluoroethane

    SciTech Connect

    Barao, T.; Castro, C.A.N. de; Mardolcar, U.V.; Okambawa, R.; St-Arnaud, J.M.

    1995-11-01

    In this paper the authors report measurements of the dielectric constant of 1,1,1,2-tetrafluoroethane, HFC-134a, an environmentally acceptable refrigerant, under consideration as an alternative replacement of the chlorofluorocarbons, CFCs. The dipole moment in the gaseous phase was found to be (1.91 {+-} 0.19) D, and in the liquid phase (3.54 {+-} 0.01) D. The authors present values of the first three dielectric virial coefficients in the gaseous phase.

  11. Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization

    NASA Astrophysics Data System (ADS)

    Grill, Alfred; Neumayer, Deborah A.

    2003-11-01

    Carbon doped oxide dielectrics comprised of Si, C, O, and H (SiCOH) have been prepared by plasma enhanced chemical vapor deposition (PECVD) from mixtures of tetramethylcyclotetrasiloxane (TMCTS) and an organic precursor. The films have been analyzed by determining their elemental composition and by Fourier transform infrared spectroscopy with deconvolution of the absorption peaks. The analysis has shown that PECVD of TMCTS produces a highly crosslinked networked SiCOH film. Dissociation of TMCTS appears to dominate the deposition chemistry as evidenced by the multitude of bonding environments and formation of linear chains and branches. Extensive crosslinking of TMCTS rings occurs through Si-Si, Si-CH2-Si, Si-O-Si, and Si-CH2-O-Si moieties. The films deposited from mixtures of TMCTS and organic precursor incorporate hydrocarbon fragments into the films. This incorporation occurs most probably through the reaction of the organic precursor and the Si-H bonds of TMCTS. Annealing the SiCOH films deposited from TMCTS and organic precursor results in a large loss of carbon and hydrogen from the films resulting from the fragmentation and loss of the incorporated organic component. The deconvolution of the Si-O-Si asymmetric stretching band of the annealed films shows the existence of a larger fraction of a cage structure and a correspondingly smaller fraction of a networked (highly crosslinked) structure in the SiCOH films deposited from mixtures of TMCTS with organic precursor relative to the films deposited from TMCTS only. The evolution of the volatile hydrocarbon fragments during annealing results in the formation of nanopores and subsequent reduction of the dielectric constants of the films to extreme low-k values.

  12. Defect density and dielectric constant in perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Samiee, Mehran; Konduri, Siva; Ganapathy, Balaji; Kottokkaran, Ranjith; Abbas, Hisham A.; Kitahara, Andrew; Joshi, Pranav; Zhang, Liang; Noack, Max; Dalal, Vikram

    2014-10-01

    We report on measurement of dielectric constant, mid-gap defect density, Urbach energy of tail states in CH3NH3PbIxCl1-x perovskite solar cells. Midgap defect densities were estimated by measuring capacitance vs. frequency at different temperatures and show two peaks, one at 0.66 eV below the conduction band and one at 0.24 eV below the conduction band. The attempt to escape frequency is in the range of 2 × 1011/s. Quantum efficiency data indicate a bandgap of 1.58 eV. Urbach energies of valence and conduction band are estimated to be ˜16 and ˜18 meV. Measurement of saturation capacitance indicates that the relative dielectric constant is ˜18.

  13. Method of measuring dielectric constant using an oscilloscope

    NASA Astrophysics Data System (ADS)

    Nogi, Yasuyuki; Watanabe, Masayuki; Suzuki, Kiyomitsu; Ohkuma, Yasunori

    2015-09-01

    A simple relationship determining the dielectric constant of a material inserted in a parallel-plate capacitor is formulated from Gauss's law for a uniform electric field and the continuity condition of electric flux at the boundary of the material. The relationship suggests that the dielectric constant can be determined from the dependence of the charge stored on the capacitor on the thicknesses of the material and the air layer between the plates. A uniform field is created by applying an ac voltage to the plates, which includes a guard ring. The stored charge is estimated by using an oscilloscope to measure the voltage across a resistor inserted between the power supply and the capacitor. The results of the measurement are given for planar materials such as soda-lime glass, Bakelite, acrylic glass, and Teflon with a thickness of 0.5-1 cm.

  14. Defect density and dielectric constant in perovskite solar cells

    SciTech Connect

    Samiee, Mehran; Konduri, Siva; Abbas, Hisham A.; Joshi, Pranav; Zhang, Liang; Dalal, Vikram; Ganapathy, Balaji; Kottokkaran, Ranjith; Noack, Max; Kitahara, Andrew

    2014-10-13

    We report on measurement of dielectric constant, mid-gap defect density, Urbach energy of tail states in CH{sub 3}NH{sub 3}PbI{sub x}Cl{sub 1−x} perovskite solar cells. Midgap defect densities were estimated by measuring capacitance vs. frequency at different temperatures and show two peaks, one at 0.66 eV below the conduction band and one at 0.24 eV below the conduction band. The attempt to escape frequency is in the range of 2 × 10{sup 11}/s. Quantum efficiency data indicate a bandgap of 1.58 eV. Urbach energies of valence and conduction band are estimated to be ∼16 and ∼18 meV. Measurement of saturation capacitance indicates that the relative dielectric constant is ∼18.

  15. Protein Dielectric Constants Determined from NMR Chemical Shift Perturbations

    PubMed Central

    Kukic, Predrag; Farrell, Damien; McIntosh, Lawrence P.; E., Bertrand García-Moreno; Jensen, Kristine Steen; Toleikis, Zigmantas; Teilum, Kaare; Nielsen, Jens Erik

    2015-01-01

    Understanding the connection between protein structure and function requires a quantitative understanding of electrostatic effects. Structure-based electrostatics calculations are essential for this purpose, but their use have been limited by a long-standing discussion on which value to use for the dielectric constants (εeff and εp) required in Coulombic models and Poisson-Boltzmann models. The currently used values for εeff and εp are essentially empirical parameters calibrated against thermodynamic properties that are indirect measurements of protein electric fields. We determine optimal values for εeff and εp by measuring protein electric fields in solution using direct detection of NMR chemical shift perturbations (CSPs). We measured CSPs in fourteen proteins to get a broad and general characterization of electric fields. Coulomb's law reproduces the measured CSPs optimally with a protein dielectric constant (εeff) from 3 to 13, with an optimal value across all proteins of 6.5. However, when the water-protein interface is treated with finite difference Poisson-Boltzmann calculations, the optimal protein dielectric constant (εp) rangedsfrom 2-5 with an optimum of 3. It is striking how similar this value is to the dielectric constant of 2-4 measured for protein powders, and how different it is from the εp of 6-20 used in models based on the Poisson-Boltzmann equation when calculating thermodynamic parameters. Because the value of εp = 3 is obtained by analysis of NMR chemical shift perturbations instead of thermodynamic parameters such as pKa values, it is likely to describe only the electric field and thus represent a more general, intrinsic, and transferable εp common to most folded proteins. PMID:24124752

  16. Measurement of the dielectric constant of lunar minerals and regolith

    NASA Astrophysics Data System (ADS)

    Trigwell, S.; Starnes, J.; Brown, C.; White, C.; White, T.; Su, M.; Mahdi, H. H.; Al-Shukri, H. J.; Biris, A.; Non Invasive ProspectingLunar Ores; Minerals

    2010-12-01

    For long-term lunar exploration, the priorities are excavation and beneficiation of lunar regolith for water, oxygen, energy production, and structural and shielding fabrication. This work is part of a project focusing on the utilization of Ground Penetrating Radar (GPR) to identify the presence of enriched areas of sub-surface minerals for excavation and ore processing. GPR detection of sub-surface minerals depends significantly on the differences in dielectric constant of the various minerals. One of the minerals in lunar regolith of interest is ilmenite for its use in oxygen production and a supply of titanium and iron. Several pure minerals (feldspar, spodumene, olivine, and ilmenite) and lunar simulant JSC-1A were sieved into several size fractions (<25, 25-50, 50-75, and 75-100 µm). A test cell with an attached shaker was constructed in a vacuum chamber and measurements of the dielectric constant of the minerals and simulant were taken as a function of particle size and packing density. The results showed that there was a direct correlation between the measured dielectric constant and packing density and that ilmenite had a much higher dielectric constant than the other minerals. Measurements were also taken on Apollo 14 lunar regolith as a comparison and compared to the literature to validate the results. Mixtures of pure silica powder and ilmenite in various concentrations (2, 5, 10, and 15%) were measured and it was determined that approximately 2-4% ilmenite in the mixtures could be distinguished. Core samples taken on the moon for all Apollo missions showed ilmenite concentrations ranging from 0.3-12%, depending upon whether it was in the mare or highlands regions, and so this data may significantly contribute to the use of GPR for mineral prospecting on the moon.

  17. The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices

    SciTech Connect

    Lu, Jianxin; Gong, Changjie; Ou, Xin; Lu, Wei; Yin, Jiang; Xu, Bo; Xia, Yidong; Liu, Zhiguo; Li, Aidong

    2014-11-15

    The memory structures Pt/Al{sub 2}O{sub 3}/(TiO{sub 2}){sub x}(Al{sub 2}O{sub 3}){sub 1−x}/Al{sub 2}O{sub 3}/p-Si(nominal composition x = 0.05, 0.50 and 0.70) were fabricated by using rf-magnetron sputtering and atomic layer deposition techniques, in which the dielectric constant and the bottom of the conduction band of the high-k composite (TiO{sub 2}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} were adjusted by controlling the partial composition of Al{sub 2}O{sub 3}. With the largest dielectric constant and the lowest deviation from the bottom of the conduction band of Si, (TiO{sub 2}){sub 0.7}(Al{sub 2}O{sub 3}){sub 0.3} memory devices show the largest memory window of 7.54 V, the fast programming/erasing speed and excellent endurance and retention characteristics, which were ascribed to the special structural design, proper combination of dielectric constant and band alignment in the high-k composite (TiO{sub 2}){sub 0.7}(Al{sub 2}O{sub 3}){sub 0.3}.

  18. Low-temperature 1 /f noise in microwave dielectric constant of amorphous dielectrics in Josephson qubits

    NASA Astrophysics Data System (ADS)

    Burin, Alexander L.; Matityahu, Shlomi; Schechter, Moshe

    2015-11-01

    The analytical solution for the low-temperature 1 /f noise in the microwave dielectric constant of amorphous films at frequency ν0˜5 GHz due to tunneling two-level systems (TLSs) is derived within the standard tunneling model including the weak dipolar or elastic TLS-TLS interactions. The 1 /f frequency dependence is caused by TLS spectral diffusion characterized by the width growing logarithmically with time. Temperature and field dependencies are predicted for the noise spectral density in typical glasses with universal TLSs. The satisfactory interpretation of the recent experiment by J. Burnett et al. [Nat. Commun. 5, 4119 (2014), 10.1038/ncomms5119] in Pt-capped Nb superconducting resonators is attained by assuming a smaller density of TLSs compared to ordinary glasses, which is consistent with the very high internal quality factor in those samples.

  19. Preparation of dielectric coating of variable dielectric constant by plasma polymerization

    NASA Technical Reports Server (NTRS)

    Hudis, M.; Wydeven, T. (Inventor)

    1979-01-01

    A plasma polymerization process for the deposition of a dielectric polymer coating on a substrate comprising disposing of the substrate in a closed reactor between two temperature controlled electrodes connected to a power supply is presented. A vacuum is maintained within the closed reactor, causing a monomer gas or gas mixture of a monomer and diluent to flow into the reactor, generating a plasma between the electrodes. The vacuum varies and controls the dielectric constant of the polymer coating being deposited by regulating the gas total and partial pressure, the electric field strength and frequency, and the current density.

  20. Characterization of the Dielectric Constant in the Trichoderma reesei Cel7B Active Site.

    PubMed

    Song, Xiangfei; Wang, Yefei; Zhang, Shujun; Yan, Shihai; Li, Tong; Yao, Lishan

    2015-07-27

    An attempt is made to evaluate the dielectric constant of the Trichoderma reesei Cel7B active site. Through kinetic measurements, the pKa value of the catalytic acid E201 is determined. Mutations (away from E201) with net charge changes are introduced to perturb the E201 pKa. It is shown that the mutation with a +1 charge change (including G225R, G230R, and A335R) decreases the pKa of E201, whereas the mutation with a -1 charge change (including Q149E, A222D, G225D, and G230D) increases the pKa. This effect is consistent with the electrostatic interaction between the changed charge and the E201 side chain. The fitting of the experimental data yields an apparent dielectric constant of 25-80. Molecular dynamics simulations with explicit water molecules indicate that the high solvent accessibility of the active site contributes largely to the high dielectric constant. ONIOM calculations show that high dielectric constant benefits the catalysis through decreasing the energy of the transition state relative to that of the enzyme substrate complex. PMID:26114648

  1. Three dielectric constants and orientation order parameters in nematic mesophases

    NASA Astrophysics Data System (ADS)

    Yoon, Hyung Guen; Jeong, Seung Yeon; Kumar, Satyendra; Park, Min Sang; Park, Jung Ok; Srinivasarao, M.; Shin, Sung Tae

    2011-03-01

    Temperature dependence of the three components ɛ1 , ɛ2 , and ɛ3 of dielectric constant and orientation order parameters in the nematic phase of mesogens with rod, banana, and zero-order dendritic shape were measured using the in-plane and vertical switching geometries, and micro-Raman technique. Results on the well-known uniaxial (Nu) nematogens, E7 and 5CB, revealed two components ɛ1 = ~ɛ| | and ɛ2 = ~ɛ3 = ~ɛ⊥ , as expected. The three dielectric constants were different for two azo substituted (A131 and A103) and an oxadiazole based (ODBP-Ph-C12) bent core mesogens, and a Ge core tetrapode. In some cases, two of the components became the same indicating a loss of biaxiality at temperatures coinciding with the previously reported Nu to biaxial nematic transition. This interpretation is substantiated by micro-Raman measurements of the uniaxial and biaxial nematic order parameters. Supported by the US Department of Energy, Basic Energy Sciences grant ER46572 and by Samsung Electronics Corporation.

  2. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  3. Accurate measurements of the dielectric constant of seawater at L band

    NASA Astrophysics Data System (ADS)

    Lang, Roger; Zhou, Yiwen; Utku, Cuneyt; Le Vine, David

    2016-01-01

    This paper describes measurements of the dielectric constant of seawater at a frequency of 1.413 GHz, the center of the protected band (i.e., passive use only) used in the measurement of sea surface salinity from space. The objective of the measurements is to accurately determine the complex dielectric constant of seawater as a function of salinity and temperature. A resonant cylindrical microwave cavity in transmission mode has been employed to make the measurements. The measurements are made using standard seawater at salinities of 30, 33, 35, and 38 practical salinity units over a range of temperatures from 0°C to 35°C in 5°C intervals. Repeated measurements have been made at each temperature and salinity. Mean values and standard deviations are then computed. The total error budget indicates that the real and imaginary parts of the dielectric constant have a combined standard uncertainty of about 0.3 over the range of salinities and temperatures considered. The measurements are compared with the dielectric constants obtained from the model functions of Klein and Swift and those of Meissner and Wentz. The biggest differences occur at low and high temperatures.

  4. Accurate Measurements of the Dielectric Constant of Seawater at L Band

    NASA Technical Reports Server (NTRS)

    Lang, Roger; Zhou, Yiwen; Utku, Cuneyt; Le Vine, David

    2016-01-01

    This paper describes measurements of the dielectric constant of seawater at a frequency of 1.413 GHz, the center of the protected band (i.e., passive use only) used in the measurement of sea surface salinity from space. The objective of the measurements is to accurately determine the complex dielectric constant of seawater as a function of salinity and temperature. A resonant cylindrical microwave cavity in transmission mode has been employed to make the measurements. The measurements are made using standard seawater at salinities of 30, 33, 35, and 38 practical salinity units over a range of temperatures from 0 degree C to 35 degree C in 5 degree C intervals. Repeated measurements have been made at each temperature and salinity. Mean values and standard deviations are then computed. The total error budget indicates that the real and imaginary parts of the dielectric constant have a combined standard uncertainty of about 0.3 over the range of salinities and temperatures considered. The measurements are compared with the dielectric constants obtained from the model functions of Klein and Swift and those of Meissner and Wentz. The biggest differences occur at low and high temperatures.

  5. Calculation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics

    NASA Astrophysics Data System (ADS)

    Heitzer, Henry Matthew

    with experiment. This method is then used to help design new high-capacitance molecular dielectrics by determining what materials and chemical properties are important in maximizing dielectric response in Self-Assembled Monolayers (SAMs). Highly (hyper)polarizable Donor-Bridge-Acceptor (DBA) molecular materials are shown to have remarkable dielectric responses. Lastly, the interplay between charge conduction and dielectric constant is examined and it is demonstrated that high dielectric constant materials with low conductance are achievable through molecular design. This technique is a powerful tool for understanding and designing molecular dielectric systems, whose properties are fundamental in many scientific pursuits.

  6. Dielectric Constant Measurements on Lunar Soils and Terrestrial Minerals

    NASA Technical Reports Server (NTRS)

    Anderson, R. C.; Buehler, M. G.; Seshardri, S.; Schaap, M. G.

    2004-01-01

    The return to the Moon has ignited the need to characterize the lunar regolith using in situ methods. An examination of the lunar regolith samples collected by the Apollo astronauts indicates that only a few minerals (silicates and oxides) need be considered for in situ resource utilization (ISRU). This simplifies the measurement requirements and allows a detailed analysis using simple methods. Characterizing the physical properties of the rocks and soils is difficult because of many complex parameters such as soil temperature, mineral type, grain size, porosity, and soil conductivity. In this presentation, we will show that the dielectric constant measurement can provide simple detection for oxides such as TiO2, FeO, and water. Their presence is manifest by an unusually large imaginary permittivity.

  7. How does static stretching decrease the dielectric constant of VHB 4910 elastomer?

    NASA Astrophysics Data System (ADS)

    Vu-Cong, T.; Nguyen-Thi, N.; Jean-Mistral, C.; Sylvestre, A.

    2014-03-01

    Subject to a voltage, dielectric elastomers deform by the effect of Maxwell stress which is depended directly on the dielectric constant of the material. The combination of large strain, soft elastic response and good dielectric properties has established VHB 4910 elastomer as the most used material for dielectric elastomer actuators. However, the effect of stretch on the dielectric constant for this elastomer is much debated topic while controversy results are demonstrated in the literature. The dielectric constant of this material is studied and demonstrated that it decreases slightly or hugely among the stretch but any pertinent response and any physic explications are validated by the scientific community. In this paper, we presented a detail study about dielectric behavior of VHB 4910 elastomer versus a broadband of stretch and temperature. We found that the dielectric constant of this material depends strongly on the stretch following a polynomial law. Among all the explanations of stretch dependence of the dielectric constant of VHB 4910 in the literature: the crystallization, the change of glass transition temperature, the decrease of dipole orientation, the electrostriction effect under stress; and based on our experimental result, we conclude that the decrease of dipole orientation seems the main reason to the drop of dielectric constant of VHB 4910 elastomer versus the stretch. We proposed also an accurate model describing the dielectric constant of this material for a large range of stretch and temperature.

  8. An Explanation of the Photoinduced Giant Dielectric Constant of Lead Halide Perovskite Solar Cells.

    PubMed

    Almond, Darryl P; Bowen, Chris R

    2015-05-01

    A photoinduced giant dielectric constant of ~10(6) has been found in impedance spectroscopy measurements of lead halide perovskite solar cells. We report similar effects in measurements of a porous lead zirconate titanate (PZT) sample saturated with water. The principal effect of the illumination of the solar cell and of the introduction of water into the pore volume of the PZT sample is a significant increase in conductivity and dielectric loss. This is shown to exhibit low frequency power law dispersion. Application of the Kramers-Kronig relationships show the large measured values of permittivity to be related to the power law changes in conductivity and dielectric loss. The power law dispersions in the electrical responses are consistent with an electrical network model of microstructure. It is concluded that the high apparent values of permittivity are features of the microstructural networks and not fundamental effects in the two perovskite materials. PMID:26263342

  9. Quantum theory of the complex dielectric constant of free carriers in polar semiconductors

    SciTech Connect

    Jensen, B.

    1982-09-01

    The optical constants and reflectivity of a semiconductor are known as functions of the real and imaginary parts of the complex dielectric constant. The imaginary part of the complex dielectric constant e/sub 2/ is proportional to the optical conductivity, which has recently been calculated from the quantum density matrix equation of motion. The expression obtained for e/sub 2/ reduces to the Drude result, as obtained from the quasi-classical Boltzmann transport equation, in the limit of low frequencies and elastic scattering mechanisms, and to the quantum result found using time dependent perturbation theory in the limit of high frequencies. This paper derives the real part of the complex dielectric constant e/sub 1/ for a III-V or II-VI semiconductor with the band structure of the Kane theory, using the quantum density matrix method. The relation of e/sub 1/ to the second order perturbation energy of the system is shown, and the reflectivity is a minimum when the second order perturbation energy vanishes. The quantum calculation for e/sub 1/ gives approximately the same result as the Drude theory, except near the fundamental absorption edge, and reduces to the Drude result at low frequencies. Using the complex dielectric constant, the real and imaginary parts of the complex refractive index, the skin depth, and surface impedance, and the reflectivity are found. The plasma resonance is examined. The surface impedance and the skin depth are shown to reduce to the usual classical result in the limit that e/sub 1/ = 0 and w tau << 1, where w is the angular frequency of the applied field and tau is the electron scattering time.

  10. Dielectric constant of fluids and fluid mixtures at criticality.

    PubMed

    Losada-Pérez, Patricia; Pérez-Sánchez, Germán; Cerdeiriña, Claudio A; Thoen, Jan

    2010-04-01

    The behavior of the dielectric constant epsilon of pure fluids and binary mixtures near liquid-gas and liquid-liquid critical points is studied within the concept of complete scaling of asymmetric fluid-fluid criticality. While mixing of the electric field into the scaling fields plays a role, pressure mixing is crucial as the asymptotic behavior of the coexistence-curve diameter in the epsilon-T plane is concerned. Specifically, it is found that the diameters, characterized by a |T-Tc|1-alpha singularity in the previous scaling formulation [J. V. Sengers, D. Bedeaux, P. Mazur, and S. C. Greer, Physica A 104, 573 (1980)], gain a more dominant |T-Tc|2beta term, whose existence is shown to be supported by literature experimental data. The widely known |T-Tc|1-alpha singularity of epsilon along the critical isopleth in the one-phase region is found to provide information on the effect of electric fields on the liquid-liquid critical temperature: from experimental data it is inferred that Tc usually decreases as the magnitude of the electric field is enhanced. Furthermore, the behavior of mixtures along an isothermal path of approach to criticality is also analyzed: theory explains why the observed anomalies are remarkably higher than those associated to the usual isobaric path. PMID:20481691

  11. Evaluation of high temperature capacitor dielectrics

    NASA Astrophysics Data System (ADS)

    Hammoud, Ahmad N.; Myers, Ira T.

    Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

  12. Evaluation of high temperature capacitor dielectrics

    NASA Technical Reports Server (NTRS)

    Hammoud, Ahmad N.; Myers, Ira T.

    1992-01-01

    Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

  13. On the Dielectric Constant for Acetanilide: Experimental Measurements and Effect on Energy Transport

    NASA Astrophysics Data System (ADS)

    Careri, G.; Compatangelo, E.; Christiansen, P. L.; Halding, J.; Skovgaard, O.

    1987-01-01

    Experimental measurements of the dielectric constant for crystalline acetanilide powder for temperatures ranging from - 140°C to 20°C and for different hydration levels are presented. A Davydov-soliton computer model predicts dramatic changes in the energy transport and storage for typically increased values of the dielectric constant.

  14. Improved SPC force field of water based on the dielectric constant: SPC/ ε

    NASA Astrophysics Data System (ADS)

    Fuentes-Azcatl, Raúl; Mendoza, Noé; Alejandre, José

    2015-02-01

    In a recent work, Fuentes and Alejandre (2014) found that for TIP4P models there is a dipole moment of minimum density at 240 K and that the Lennard-Jones parameters can be adjusted to match the experimental dielectric constant at 300 K and the temperature of maximum density, respectively. The same procedure is used in this work to re-parameterize the simple point charge (SPC) model keeping the original geometry. The new model fails to reproduce the experimental self-diffusion coefficient and shear viscosity but improves the results at different temperatures and pressures of dielectric constant, isothermal compressibility, thermal expansion coefficient, surface tension, coexisting densities at the liquid-vapor interface, equation of state of ice Ih and equation of state of liquids at high pressures. A second model that reproduces the dielectric constant, self-diffusion coefficient and shear viscosity is proposed but the temperature of maximum density is 250 K, compared with the experimental value of 277 K. Both models improve the SPC/E results for almost all properties. The TIP3P model was also analyzed but the liquid density at 240 K always increases and a minimum in the dipole moment was not found. It is not possible to adjust for that model the charge distribution and short range interaction parameters to reproduce at the same time the target properties.

  15. Stability of aspartame in water: organic solvent mixtures with different dielectric constants.

    PubMed

    Sanyude, S; Locock, R A; Pagliaro, L A

    1991-07-01

    In order to examine the influence of solvent composition on the stability of aspartame (N-alpha-L-aspartyl-L-phenylalanine-1-methyl ester) in solution (5 mg/mL), the degradation of aspartame was carried out in water:methanol, water:ethanol, and water:glycerine mixtures with dielectric constant values of 45, 55, and 65, respectively. The rate of disappearance of aspartame was measured by a sensitive HPLC assay. The degradation rate of aspartame increased as the dielectric constant of the solvent mixture decreased in all three solvents systems. For example, at 60 degrees C, the degradation rate constants were 4.1, 5.9, and 8.4 x 10(-3) h-1 at dielectric constant of 65, 55, and 45, respectively. From these results, it can be concluded that the stability of aspartame in aqueous solutions cannot be enhanced by the replacement of water by solvents of lower dielectric constant. PMID:1941567

  16. Low dielectric constant fibers from a fluorinated polymide for electronic packaging

    SciTech Connect

    Eashoo, M.; Buckley, L.J.; St. Clair, A.K.

    1996-10-01

    As the electronics industry moves toward higher frequencies, the need for laminate materials with enhanced dielectric properties is crucial. Since uniaxial composites are highly filled with reinforcing materials, fibers will play a significant role in lowering the overall dielectric constant of multi-layer printed wiring boards. Past fibers from a low dielectric constant ({epsilon}{prime} = 2.5) polyimide made from 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and 2,2-bis [4-(4-aminophenoxy) phenyl] hexafluoropropane (4BDAF) were wet-spun into an ethyl alcohol/water bath using a dimethylacetamide (DMAc)/Polymer solution. Relatively weak filaments ({Epsilon}{prime} = 5.1 GPa) result from processing with DMAc, as the fiber core is very porous. A new spinning method, using controlled miscibility between the solvent and the coagulant, yielded solid core fibers using methylene chloride as the solvent. These 6FDA-4BDAF fibers have textile-like mechanical properties having; a modulus of 7-8 GPa, a tensile strength of 300-380 MPa, and a break strain of 4-7%.

  17. Improved Approximation of Water Dielectric Permittivity for Calculation of Hamaker Constants.

    PubMed

    Nguyen

    2000-09-15

    Due to the highly polar nature with a multipeak absorption spectrum of water, the contribution of the relaxation in the microwave and infrared regions to the water dielectric spectrum is significant. The old data obtained by the Cauchy plot analysis of the parameters of the single-relaxation representation of water dielectric spectrum produce the discrepancy in the Hamaker constants computed by the complete continuum theory. New data are obtained by the direct fitting of the single-relaxation model to the complete water dielectric spectrum. The Hamaker constants computed using the improved approximate and the complete spectra for water permittivity are in good agreement. The Hamaker function of quartz-water-quartz and quartz-water-air systems computed using the improved approximation for water and the Cauchy plot approximation for quartz also agrees with that computed using the complete spectrum for both liquid water and crystalline quartz. The new data are to be used, instead of the old Cauchy plot analysis data, in the calculation of the van der Waals interaction across water films based on the available simplified expressions. Copyright 2000 Academic Press. PMID:10985848

  18. Enhancement of dielectric constant in transition metal doped ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Singh, Swati; Dey, P.; Roy, J. N.; Mandal, S. K.

    2014-09-01

    We have presented dielectric studies on Zn1-xCoxO, Zn1-xFexO, and Zn1-xFex/2Cox/2O (x = doping level) semiconducting nanoparticles (˜2-40 nm). For all those samples, dielectric constant (є) is found to exhibit a maximum with x. Enhancement of є is found to be ˜250 times for Zn0.85Co0.15O and ˜400 times for Zn0.8Fe0.1Co0.1O from that of ZnO. Presence of effective higher oxidation state of transition metals ions in ZnO due to Fe/Co doping resulting in space charge polarization possibly yields this effect. The simultaneous existence of high є, semiconducting, and ferromagnetic like behaviour at 300 K seems to propose Zn0.8Fe0.1Co0.1O, promising for technological application.

  19. Tailoring the dipole properties in dielectric polymers to realize high energy density with high breakdown strength and low dielectric loss

    SciTech Connect

    Thakur, Yash; Lin, Minren; Wu, Shan; Zhang, Q. M. E-mail: qxz1@psu.edu; Cheng, Zhaoxi; Jeong, D.-Y. E-mail: qxz1@psu.edu

    2015-03-21

    High energy density polymer materials are desirable for a broad range of modern power electronic systems. Here, we report the development of a new class of polymer dielectrics based on polyurea and polythiourea, which possess high thermal stability. By increasing the dipole density, the dielectric constant of meta-phenylene polyurea and methylene polythiourea can be increased to 5.7, compared with aromatic polyurea and aromatic polythiourea, which have a dielectric constant in the range of 4.1–4.3. The random dipoles with high dipolar moment and amorphous structure of these polyurea and polythiourea based polymers provide strong scattering to the charge carriers, resulting in low losses even at high electric fields. Consequently, this new class of polymers exhibit a linear dielectric response to the highest field measured (>700 MV/m) with a high breakdown strength, achieving high energy density (>13 J/cm{sup 3}) with high efficiency (>90%)

  20. Large change in dielectric constant of CaCu3Ti4O12 under violet laser

    NASA Astrophysics Data System (ADS)

    Masingboon, C.; Thongbai, P.; King, P. D. C.; Maensiri, S.; Meevasana, W.

    2013-03-01

    This work reports the influence of light illumination on the dielectric constant of CaCu3Ti4O12 (CCTO) polycrystals which exhibit giant dielectric constant. When the CCTO samples were exposed to 405-nm laser light, the enhancement in capacitance as high as 22% was observed for the first time, suggesting application of light-sensitive capacitance devices. To understand this change better microscopically, we also performed electronic-structure measurements using photoemission spectroscopy, and measured the electrical conductivity of the CCTO samples under different conditions of light exposure and oxygen partial pressure. All these measurements suggest that this large change is driven by oxygen vacancy induced by the irradiation.

  1. Thickness and electric-field-dependent polarizability and dielectric constant in phosphorene

    NASA Astrophysics Data System (ADS)

    Kumar, Piyush; Bhadoria, B. S.; Kumar, Sanjay; Bhowmick, Somnath; Chauhan, Yogesh Singh; Agarwal, Amit

    2016-05-01

    Based on extensive first-principles calculations, we explore the thickness-dependent effective dielectric constant and slab polarizability of few-layer black phosphorene. We find that the dielectric constant in ultrathin phosphorene is thickness-dependent and it can be further tuned by applying an out-of-plane electric field. The decreasing dielectric constant with reducing number of layers of phosphorene is a direct consequence of the lower permittivity of the outer layers and the increasing surface-to-volume ratio. We also show that the slab polarizability depends linearly on the number of layers, implying a nearly constant polarizability per phosphorus atom. Our calculation of the thickness- and electric-field-dependent dielectric properties will be useful for designing and interpreting transport experiments in gated phosphorene devices, wherever electrostatic effects such as capacitance and charge screening are important.

  2. An Improved Dielectric Constant Cell for Use in Student and Research Laboratories.

    ERIC Educational Resources Information Center

    Thompson, H. Bradford.; Walmsley, Judith A.

    1979-01-01

    Describes the latest stage in the design of an economical dielectric constant cell, tested in both instructional and research applications, that is suitable for student laboratories and for precision research measurements. (BT)

  3. The effect of diamic acid additives on the dielectric constant of polyimides

    NASA Technical Reports Server (NTRS)

    Stoakley, Diane M.; St. Clair, Anne K.

    1988-01-01

    The effect of six selected diamic acids additives (including 2,2-prime bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride-aniline (An); 4,4-prime-oxydiphthalic anhydride-An, 3,3-prime diaminodiphenyl sulfone-phthalic anhydride (PA); 4,4-prime-oxydianiline-PA; 2,2-bis 4(4-aminophenoxy)phenyl hexafluoropropane-PA; and 2,2-bis 4(3-aminophenoxy)phenyl hexafluoropropane-PA) on the dielectric constants of low-dielectric-constant polyimide resins was evaluated. It was found that the effect of the incorporation of the diamic acids on reducing the dielectric constant of polyimides may be limited as the dielectric constant of the base resin itself becomes very low. The additives were found to lower the resin's values of glass transition temperature, with no effect on thermooxidative stability.

  4. Measuring the spatial distribution of dielectric constants in polymers through quasi-single molecule microscopy.

    PubMed

    Hess, Chelsea M; Riley, Erin A; Palos-Chávez, Jorge; Reid, Philip J

    2013-06-13

    The variation in dielectric constant is measured for thin films of poly(methyl methacrylate) (PMMA) and poly(vinylidene fluoride) (PVDF) using confocal fluorescence microscopy. Spatial variation in the local dielectric constant of the polymer films on the ~250 nm length scale is measured using the solvochromatic emission from incorporated nile red (NR) at "quasi-single molecule" (10(-7) M) and true single molecule (SM) concentrations (10(-9) M). Correlation of the NR fluorescence wavelength maximum with dielectric constant is used to transform images of NR's emission maxima to spatial variation in local dielectric constant. We demonstrate that the distributions of dielectric environments measured in the quasi- and true SM approaches are equivalent; however, the enhanced signal rates present in the quasi-SM approach result in this technique being more efficient. In addition, the quasi-SM technique reports directly on the continuous spatial variation in dielectric constant, information that is difficult to obtain in true SM studies. With regards to the polymers of interest, the results presented here demonstrate that a limited distribution of dielectric environments is present in PMMA; however, a broad distribution of environments exists in PVDF consistent with this polymer existing as a distribution of structural phases. PMID:23735049

  5. Quantum theory of the dielectric constant of a magnetized plasma and astrophysical applications. I.

    NASA Technical Reports Server (NTRS)

    Canuto, V.; Ventura, J.

    1972-01-01

    A quantum mechanical treatment of an electron plasma in a constant and homogeneous magnetic field is considered, with the aim of (1) defining the range of validity of the magnetoionic theory (2) studying the deviations from this theory, in applications involving high densities, and intense magnetic field. While treating the magnetic field exactly, a perturbation approach in the photon field is used to derive general expressions for the dielectric tensor. Numerical estimates on the range of applicability of the magnetoionic theory are given for the case of the 'one-dimensional' electron gas, where only the lowest Landau level is occupied.

  6. Development of low dielectric constant alumina-based ceramics for microelectronic substrates

    SciTech Connect

    Wu, S. J.

    1993-05-01

    The performance of high speed computers depends not only on IC chips, but also on the signal propagation speed between these chips. The signal propagation delay in a computer is determined by the dielectric constant of the substrate material to which the IC chips are attached. In this study, a ceramic substrate with a low dielectric constant (k {approx} 5.0) has been developed. When compared with the traditional alumina substrate (k {approx} 10.0), the new material corresponds to a 37% decrease in the signal propagation delay. Glass hollow spheres are used to introduce porosity (k = 1.0) to the alumina matrix in a controlled manner. A surface coating technique via heterogeneous nucleation in aqueous solution has been used to improve the high temperature stability of these spheres. After sintering at 1,400 C, isolated spherical pores are uniformly distributed in the almost fully dense alumina matrix; negligible amounts of matrix defects can be seen. All pores are isolated from each other. Detailed analyses of the chemical composition find that the sintered sample consists of {alpha}-alumina, mullite and residual glass. Mullite is the chemical reaction product of alumina and the glass spheres. Residual glass exists because current firing conditions do not complete the mullitization reaction. The dielectric constant of the sintered sample is measured and then compared with the predicted value using Maxwell`s model. Mechanical strength is evaluated by a four-point bending test. Although the flexural strength decreases exponentially with porosity, samples with 34% porosity (k {approx} 5.0) still maintain adequate mechanical strength for the proper operation of a microelectronic substrate.

  7. Impact of electric-field dependent dielectric constants on two-dimensional electron gases in complex oxides

    SciTech Connect

    Peelaers, H.; Gordon, L.; Steiauf, D.; Janotti, A.; Van de Walle, C. G.; Krishnaswamy, K.; Sarwe, A.

    2015-11-02

    High-density two-dimensional electron gas (2DEG) can be formed at complex oxide interfaces such as SrTiO{sub 3}/GdTiO{sub 3} and SrTiO{sub 3}/LaAlO{sub 3}. The electric field in the vicinity of the interface depends on the dielectric properties of the material as well as on the electron distribution. However, it is known that electric fields can strongly modify the dielectric constant of SrTiO{sub 3} as well as other complex oxides. Solving the electrostatic problem thus requires a self-consistent approach in which the dielectric constant varies according to the local magnitude of the field. We have implemented the field dependence of the dielectric constant in a Schrödinger-Poisson solver in order to study its effect on the electron distribution in a 2DEG. Using the SrTiO{sub 3}/GdTiO{sub 3} interface as an example, we demonstrate that including the field dependence results in the 2DEG being confined closer to the interface compared to assuming a single field-independent value for the dielectric constant. Our conclusions also apply to SrTiO{sub 3}/LaAlO{sub 3} as well as other similar interfaces.

  8. Thermally driven sign switch of static dielectric constant of VO2 thin film

    NASA Astrophysics Data System (ADS)

    Kana Kana, J. B.; Vignaud, G.; Gibaud, A.; Maaza, M.

    2016-04-01

    Smart multifunctional materials exhibiting phase transition and tunable optical and/electrical properties provide a new direction towards engineering switchable devices. Specifically, the reversible, tunable and sign switch dielectric constants via external temperature stimuli observed in vanadium dioxide (VO2) make it a candidate of choice for tunable and switchable technologies devices. Here we report new aspect of the metal-insulator transition (MIT) through the sign switch of the static dielectric constant εS of pure VO2. As it is shown, the static dielectric constant showed an abrupt change from positive at T < 70 °C to negative at T > 70 °C. εS > 0 confirms the insulating phase where charges are localized while εS < 0 confirms the metallic phase of VO2 where charges are delocalized. We report for the first time the tunability of the dielectric constant from a negative sign for the static dielectric constant of VO2 thin film rarely found in real physical systems. We also demonstrate the tunability and switchability of the real and imaginary part of the dielectric constant (ε) via external temperature stimuli. More specifically, the real (ε) and Imaginary (ε) showed an abrupt thermal hysteresis which clearly confirms the phase transition.

  9. Low dielectric constant a-SiOC:H films as copper diffusion barrier

    NASA Astrophysics Data System (ADS)

    Koh, Yee Wee; Loh, Kian Ping; Rong, Liu; Wee, A. T. S.; Huang, Liu; Sudijono, J.

    2003-01-01

    A low-k dielectric barrier based on silicon oxycarbide for copper damascene processes has been developed in this work. The optimal process conditions that allow the deposition of silicon oxycarbide films with a dielectric constant of 3.74 and copper diffusion depth of 290 Å after thermal stress at 400 °C for 3 h has been identified. Copper diffusion depth is defined as the copper and dielectric interfacial region with three-order magnitude reduction in copper concentration. A multilayered structure consisting of black diamond/SiOC/Cu/TaN/Si is fabricated. 3-methyl silane and oxygen in varying concentration is used for the deposition of SiOC using plasma enhanced chemical vapor deposition. The composition of the films is studied by Fourier transform infrared spectroscopy. Dielectric constant and dielectric breakdown of the films are also evaluated. Secondary ion mass spectrometry is employed to investigate the copper diffusion property of the films. The electronic component of the dielectric constant has been found to be most significant in affecting the overall dielectric constant in SiOC films.

  10. An investigation of the relationship between tree water potential and dielectric constant

    NASA Technical Reports Server (NTRS)

    Mcdonald, Kyle C.; Zimmermann, Reiner; Way, Jobea; Oren, Ram

    1992-01-01

    An experiment that has been performed to verify the relationship between the dielectric constant of several tree species and their respective water potentials is described. The water potential, xylem flow and dielectric properties of five tree species were continuously monitored while simultaneously manipulating canopy transpiration and water status. An analysis of the data recorded during these manipulations is presented. Results of this analysis demonstrate a clear coincidence of change in dielectric constant and water status. The implication of this relationship for the utilization of remotely sensed data to study canopy water relations is explored. Preliminary backscatter modeling results demonstrate that the changes in dielectric constant that occur as a result of changes in water status are significant enough to be observable with microwave radar.

  11. Thickness-dependent Dielectric Constant of Few-layer In2Se3 Nano-flakes

    NASA Astrophysics Data System (ADS)

    Wu, Di; Pak, Alexander; Liu, Yingnan; Wu, Xiaoyu; Ren, Yuan; Tsai, Yu-Hao; Lin, Min; Peng, Hailin; Hwang, Gyeong; Lai, Keji

    2015-03-01

    The dielectric constant or relative permittivity of active materials in electronic devices is a critical parameter for charging and screening effects. For layered two-dimensional (2D) materials, it is of great interest to understand how their dielectric constants depend on dimensionalities and the arrangement of crystal lattices. Here we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nano-flakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope (MIM) is employed to simultaneously quantify the number of layers and local electrical and optical properties. The measured effective dielectric constant increases monotonically as a function of the thickness and saturates to the bulk value at around 6-8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed through a density functional theory approach. Our results of the dielectric response are expected to be significant for the applications of layered materials in nano-devices.

  12. Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3

    NASA Astrophysics Data System (ADS)

    Shekhter, P.; Schwendt, D.; Amouyal, Y.; Wietler, T. F.; Osten, H. J.; Eizenberg, M.

    2016-07-01

    One of the approaches for realizing advanced high k insulators for metal oxide semiconductor field effect transistors based devices is the use of rare earth oxides. When these oxides are deposited as epitaxial thin films, they demonstrate dielectric properties that differ greatly from those that are known for bulk oxides. Using structural and spectroscopic techniques, as well as first-principles calculations, Gd2O3 films deposited on Si (111) and Ge (111) were characterized. It was seen that the same 4 nm thick film, grown simultaneously on Ge and Si, presents an unstrained lattice on Ge while showing a metastable phase on Si. This change from the cubic lattice to the distorted metastable phase is characterized by an increase in the dielectric constant of more than 30% and a change in band gap. The case in study shows that extreme structural changes can occur in ultra-thin epitaxial rare earth oxide films and modify their dielectric properties when the underlying substrate is altered.

  13. Effects of adding HfO2 on the microstructure and dielectric properties of giant dielectric constant ceramic CaCu3Ti4O12

    NASA Astrophysics Data System (ADS)

    Yuan, W. X.; Hark, S. K.

    2010-03-01

    CaCu3Ti4O12 (CCTO), an unusual perovskite-like ceramic, is known for its extraordinarily high (˜10^4) and relatively frequency independent dielectric constant. It has drawn a lot of attention recently because of its potential applications in microelectronics and microwave devices. In this investigation, HfO2 powder was added to a pre-reacted CCTO powder, which was synthesized by a conventional solid-state reaction, at different concentrations from 1 to 70 wt% and the mixture was sintered into disc-shaped ceramic samples. The effects of adding HfO2 on the microstructure and dielectric properties of CCTO ceramics were investigated. In general, we found that the dielectric constant tends to increase with HfO2 addition up to 8 wt% and then decrease with further addition. Moreover, the dielectric loss was also influenced by the addition of HfO2, and a low loss tangent of ˜0.035 was obtained. The ac conductivity, impedance, complex dielectric permittivity and electric modulus graphs were used to analyze the data. These observations were explained on the basis of the internal-barrier-layer capacitor model with Maxwell-Wagner relaxations.

  14. Solving constant-coefficient differential equations with dielectric metamaterials

    NASA Astrophysics Data System (ADS)

    Zhang, Weixuan; Qu, Che; Zhang, Xiangdong

    2016-07-01

    Recently, the concept of metamaterial analog computing has been proposed (Silva et al 2014 Science 343 160–3). Some mathematical operations such as spatial differentiation, integration, and convolution, have been performed by using designed metamaterial blocks. Motivated by this work, we propose a practical approach based on dielectric metamaterial to solve differential equations. The ordinary differential equation can be solved accurately by the correctly designed metamaterial system. The numerical simulations using well-established numerical routines have been performed to successfully verify all theoretical analyses.

  15. Increase of dielectric constant in PVDF by incorporating La1.8Sr0.2NiO4 into its matrix

    NASA Astrophysics Data System (ADS)

    Kumar, Rajnish; Goswami, Ashwin M.; Kar, Manoranjan

    2016-05-01

    To obtain the material with high dielectric constant and high dielectric strength for the technological applications, nanocomposite of Lanthanum Strontium Nickelete (La1.8Sr0.2NiO4) as nanofiller and polyvinylidene fluoride (PVDF) as polymer matrix has been prepared. The different nanofiler weight concentration varies from 2-8 weight percent. X-ray diffraction technique confirms the phase formation of nanocomposite. Differential scanning calorimeter (DSC) has been employed to study the percentage of crystallinity and Impedance measurement has been carried out to study the dielectric constant. DSC analysis shows decreasing trend of crystallinity whereas impedance analysis gives increasing dielectric constant with increasing La1.8Sr0.2NiO4 concentration in the nanocomposite. Also, these materials can be used as insulator in the transformer as the strength and dielectric behavior of present composite meets the technological requirements.

  16. Highly reliable spin-coated titanium dioxide dielectric

    NASA Astrophysics Data System (ADS)

    Mondal, Sandip; Kumar, Arvind; Rao, K. S. R. Koteswara; Venkataraman, V.

    2016-05-01

    Dielectric degradation as low as 0.3 % has been observed for a highly reliable Titanium dioxide (TiO2) film after constant voltage stressing (CVS) with - 4 V for 105 second at room temperature (300 K). The film was fabricated by sol -gel spin - coating method on a lightly doped p-Si (~1015 cm-3) substrate. The equivalent oxide thickness (EOT) is 7 nm with a dielectric constant 33 (at 1 MHz). Metal - Oxide - Semiconductor (MOS) capacitors have been fabricated with an optimum annealing temperature of 800°C for one hour in a preheated furnace. The dielectric degradation is annealing temperature dependent. A degradation of 1.4 %, 1.2 % and 1.1 % has been observed for 400°C, 600°C and 1000°C temperature annealed MOS respectively. The dielectric degradation increases below or above the optimum temperature of annealing.

  17. Observation of giant dielectric constant in CdCu 3Ti 4O 12 ceramics

    NASA Astrophysics Data System (ADS)

    Zuo, Rongqing; Feng, Lixin; Yan, Yueyue; Chen, Bin; Cao, Guanghan

    2006-04-01

    Although CdCu 3Ti 4O 12 is isostructural to CaCu 3Ti 4O 12, the room temperature low-frequency dielectric constant of the former compound was reported to be ˜400, only 1/25 of that of the latter material [M.A. Subramanian, et al., J. Solid State Chem. 151 (2000) 323]. In this communication, we report that the dielectric constant of CdCu 3Ti 4O 12 can be remarkably increased by elevating the sintering temperature. The room temperature dielectric constant at 100 kHz achieves 9000, almost as much as that of CaCu 3Ti 4O 12, for the sample sintered at 1283 K. The appearance of giant dielectric constant in CdCu 3Ti 4O 12 is explained in terms of internal barrier layer capacitance (IBLC) effect with the subgrain boundary as the barrier. Our result supplies an approach in searching for new giant-dielectric-constant materials in the CaCu 3Ti 4O 12 family.

  18. Investigation of W-band dielectric constant of coals by free space method

    NASA Astrophysics Data System (ADS)

    Jia, Cheng-yan; Fan, Wei; Hu, Wei; Yang, Chuan-fa; Liu, Ling-yu; Chang, Tian-ying; Cui, Hong-liang

    2015-11-01

    The dielectric constant of Shandong anthracite coals of China was studied in the frequency range of 75~110 GHz (W-band), using the free space method for the first time. The measurement system is based on the Vector Network Analyzer of Agilent Technology and a VDI extension module with frequency range from 75 GHz to 110GHz. The dielectric constants of coals were calculated from the scattering parameters by implementing an algorithm. Correctness of the test results is verified by measuring the dielectric constant of air and timber. The dielectric constant of each selected coal with different moisture contents is investigated. It is found that both the real and imaginary parts of selected coals exhibit an apparent increasing trend with increasing water content of coals. The real part of coals with different water content varies from 2.61 to 4.97, and the imaginary part from 0.06 to 0.41 at the frequency of 110 GHz. We also obtained the diversification of the dielectric constant by increasing the frequency at the W-band. The real part of coals with different frequency varies from 3.85 to 3.91, and the imaginary part from 0.32 to 0.37 at W-band.

  19. Dielectric constants of multiwall carbon nanotubes from direct current to microwave frequencies.

    PubMed

    Wang, Y C; Lue, J T; Pauw, K F

    2009-03-01

    A cylindrical rod constructed from a uniform mixture of multiwall carbon nanotubes and alumina powders dissolved in paraffin was inserted in the center of a radio frequency cavity. The real and imaginary dielectric constants of carbon tubes at various frequencies were measured, respectively, from the resonant frequencies and the quality factors, by a resistance-inductance-cacitance (RLC) meter and a microwave network analyzer. The dielectric rod benefits the protection of the sample from adsorbing moisture and preventing the rod from filling with air, thus making accurate measurments. A tunable probe specifically designed for the field pattern of a TM010 mode is delineated to improve the microwave coupling of the dielectric microwave resonator. This refined design is expected to facilitate the measurement yielding a significant manner. The real and imaginary parts of the dielectric constant of carbon nanotubes increase and decrease, respectively as frequencies increase satisfactorily in complying with the description from the free electron Drude model. PMID:19435033

  20. Syndiotactic Polystyrene/Hybrid Silica Spheres of POSS Siloxane Composites Exhibiting Ultralow Dielectric Constant.

    PubMed

    Joseph, Angel Mary; Nagendra, Baku; Surendran, K P; Gowd, E Bhoje

    2015-09-01

    Homogeneously dispersed hybrid silica/syndiotactic polystyrene composites were investigated for low-κ dielectric applications. The composites were prepared by a solution blending method, and their microstructures were analyzed by SEM, TEM, and AFM. Crystallization and phase transformation behavior of sPS were investigated using differential scanning calorimetry and wide-angle X-ray diffraction. These composites exhibited improved thermal stability and reduced thermal expansion coefficients. Promising dielectric properties were observed for the composites in the microwave frequency region with a dielectric constant (κ = 1.95) and loss (tan δ = 10(-4)) at 5 GHz. PMID:26287385

  1. Introduction of effective dielectric constant to the Poisson-Nernst-Planck model

    NASA Astrophysics Data System (ADS)

    Sawada, Atsushi

    2016-05-01

    The Poisson-Nernst-Planck (PNP) model has been widely used for analyzing impedance or dielectric spectra observed for dilute electrolytic cells. In the analysis, the behavior of mobile ions in the cell under an external electric field has been explained by a conductive nature regardless of ionic concentrations. However, if the cell has parallel-plate blocking electrodes, the mobile ions may also play a role as a dielectric medium in the cell by the effect of space-charge polarization when the ionic concentration is sufficiently low. Thus the mobile ions confined between the blocking electrodes can have conductive and dielectric natures simultaneously, and their intensities are affected by the ionic concentration and the adsorption of solvent molecules on the electrodes. The balance of the conductive and dielectric natures is quantitatively determined by introducing an effective dielectric constant to the PNP model in the data analysis. The generalized PNP model with the effective dielectric constant successfully explains the anomalous frequency-dependent dielectric behaviors brought about by the mobile ions in dilute electrolytic cells, for which the conventional PNP model fails in interpretation.

  2. Boron Nitride Nanotube Mat as a Low- k Dielectric Material with Relative Dielectric Constant Ranging from 1.0 to 1.1

    NASA Astrophysics Data System (ADS)

    Hong, Xinghua; Wang, Daojun; Chung, D. D. L.

    2016-01-01

    This paper reports that a boron nitride nanotube (BNNT) mat containing air and 1.4 vol.% BNNTs is a low- k dielectric material for microelectronic packaging, exhibiting relative dielectric constant of 1.0 to 1.1 (50 Hz to 2 MHz) and elastic modulus of 10 MPa. The mat is prepared by compacting BNNTs at 5.8 kPa. This paper also presents measurements of the dielectric properties of BNNTs (mostly multiwalled). The relative dielectric constant of the BNNT solid in the mat decreases with increasing frequency, with attractively low values ranging from 3.0 to 6.2; the alternating-current (AC) electrical conductivity increases with increasing frequency, with attractively low values ranging from 10-10 S/m to 10-6 S/m and an approximately linear relationship between log conductivity and log frequency. The specific contact capacitance of the interface between BNNTs and the electrical contact decreases with increasing frequency, with attractively high values ranging from 1.6 μF/m2 to 2.3 μF/m2. The AC electrical resistivity of the BNNT-contact interface decreases with increasing frequency, with high values ranging from 0.14 MΩ cm2 to 440 MΩ cm2.

  3. High dielectric constant observed in (1 − x)Ba(Zr{sub 0.07}Ti{sub 0.93})O{sub 3}–xBa(Fe{sub 0.5}Nb{sub 0.5})O{sub 3} binary solid-solution

    SciTech Connect

    Kruea-In, Chatchai; Eitssayeam, Sukum; Pengpat, Kamonpan; Rujijanagul, Gobwute

    2012-10-15

    Binary solid-solutions of the (1 − x)Ba(Zr{sub 0.07}Ti{sub 0.93})O{sub 3}–xBa(Fe{sub 0.5}Nb{sub 0.5}O{sub 3}) system, with 0.1 ≤ x ≤ 0.9,were fabricated via a solid-state processing technique. X-ray diffraction analysis revealed that all samples exhibited a single perovskite phase. The BaFe{sub 0.5}Nb{sub 0.5}O{sub 3} also promoted densification and grain growth of the system. Dielectric measurements showed that all samples displayed a relaxor like behavior. The x = 0.1 sample presented a dielectric-frequency and temperature with low loss tangent (<0.07 at 10 kHz). For x > 0.2 samples, the dielectric data showed a broad dielectric constant–temperature curve with a giant dielectric characteristic. In addition, a high dielectric constant > 50,000 (at 10 kHz and temperature > 150 °C) was observed for the x = 0.9 sample.

  4. Chemical and mineral composition of dust and its effect on the dielectric constant

    SciTech Connect

    Sharif, S.

    1995-03-01

    Chemical analysis is carried out for dust sample collected from central Sudan and the dust chemical constituents are obtained. The mineral composition of dust are identified by the X-ray diffraction techniques. The mineral quantities are obtained by a technique developed based on the chemical analytical methods. Analyses show that Quartz is the dominant mineral while the SiO{sub 2} is the dominant oxide. A simple model is derived for the dust chemical constituents. This model is used with models for predicting the mixture dielectric constant to estimate the dust dielectric constant; the results of which are seen to be in a good agreement with the measured values. The effects of the different constituents on the dust dielectric constant are studied and results are given.

  5. Direct correlation between free volume and dielectric constant in a fluorine-containing polyimide blend

    NASA Astrophysics Data System (ADS)

    Ramani, R.; Ramachandran, R.; Amarendra, G.; Alam, S.

    2015-06-01

    The dielectric constant of fluorinated polyimides and their blends is known to decrease with increase in free volume due to decrease in the number of polarizable groups per unit volume. Interestingly, we report here a polyimide which when blended with a fluoro- polymer showed a positive deviation of dielectric constant with free volume. In our experiment, we have used a blend of poly(ether imide) and poly(vinylidene fluorine-co-hexafluoropropylene) and the interaction between them was studied using FTIR, XRD, TGA and SEM. The blend was investigated by PALS, DB and DEA. Surprisingly, with the increase in the free volume content in this blend, the dielectric constant also increases. This change is attributed to additional space available for the polarizable groups to orient themselves to the applied electric field.

  6. A low dielectric constant customized phantom design to measure RF coil nonuniformity.

    PubMed

    Tofts, P S; Barker, G J; Dean, T L; Gallagher, H; Gregory, A P; Clarke, R N

    1997-01-01

    The selection of a suitable low dielectric constant liquid for radiofrequency coil nonuniformity measurements is described. Measurements of dielectric constant (relative permittivity) were made on a range of candidate liquids. After excluding liquids that were too inflammable or too viscous, Esso Bayol 82 oil (dielectric constant epsilon' = 2.37) was chosen. At 1.5 T, a 27 cm diameter cylindrical phantom (test object) filled with Bayol 82 has a maximum nonuniformity of 1.9% arising from radiofrequency standing waves. The maximum diameter cylinder that can be used without the nonuniformity exceeding 2% is given for a range of liquids and field strengths. The construction of customized containers that fit closely inside a radiofrequency head coil from glass fiber reinforced resin ("fiberglass") is described. Thermal expansion of the liquid takes place without a rise in the internal pressure in the container. PMID:9084027

  7. Characterization of all the elastic, dielectric, and piezoelectric constants of uniaxially oriented poled PVDF films.

    PubMed

    Roh, Yongrae; Varadan, Vasundara V; Varadan, Vijay K

    2002-06-01

    Polyvinylidene fluoride (PVDF), a piezoelectric material, has many useful applications, for example, as sensors, transducers, and surface acoustic wave (SAW) devices. Models of performance of these devices would be useful engineering tools. However, the benefit of the model is only as accurate as the material properties used in the model. The purpose of this investigation is to measure the elastic, dielectric and piezoelectric properties over a frequency range, including the imaginary part (loss) of these properties. Measurements are difficult because poled material is available as thin films, and not all quantities can be measured in that form. All components of the elastic stiffness, dielectric tensor, and electromechanical coupling tensor are needed in the models. The material studied here is uniaxially oriented poled PVDF that has orthorhombic mm2 symmetry. Presented are the frequency dependence of all nine complex elastic constants, three complex dielectric constants, and five complex piezoelectric constants. The PVDF was produced at Raytheon Research Division, Lexington, MA. Measurements were made on thin films and on stacked, cubical samples. The elastic constants c44D and C55D, the dielectric constants epsilon11T and epsilon22T, as well as the piezoelectric constants g15 and g24 reported here have not been published before. The values were determined by ultrasonic measurements using an impedance analyzer and a least square data-fitting technique. PMID:12075977

  8. In-situ Microfluidic Measurement of the Dielectric Constant of Colloidal Particles

    NASA Astrophysics Data System (ADS)

    Manafirasi, Setareh; Leary, Thomas; Maldarelli, Charles

    2015-11-01

    The ability to manipulate micron-sized colloidal particles or biological cells in a liquid medium in microfluidic geometries is necessary in lab on a chip devices for micro scale biological analysis and diagnostics for sorting and directing the trafficking of the particles. In dielectrophoresis, a nonuniform electric (E) field is applied to move the particles along the gradient of the field energy, and the velocity is a function of the particle's dielectric constant. Measurement of the dielectric constant is necessary in order to scale field strengths for applications, and it is important to undertake this measurement in-situ as the particle's dielectric content can be modified by the suspending medium (e.g. adsorption onto the particle surface). In this talk we measure directly the dielectric constant of colloids in a microfluidic channel by applying an electric field with ``V''-shaped and planar electrodes on opposite sides of the channel. The cusp of the ``V'' shape concentrates the field to provide a sufficient field intensity gradient which is designed to be uniform across the height of the channel and to vary only with its width. Optical measurements of the diffusiophoretic velocity of polymer colloids are compared to simulations based on numerical solution of the E-field and particle hydrodynamics to obtain the particle dielectric constant and investigate the effect of biomolecule adsorption on the particle surface.

  9. L-band Dielectric Constant Measurements of Seawater (Oral presentation and SMOS Poster)

    NASA Technical Reports Server (NTRS)

    Lang, Roger H.; Utku, Cuneyt; LeVine, David M.

    2003-01-01

    This paper describes a resonant cavity technique for the measurement of the dielectric constant of seawater as a function of its salinity. Accurate relationships between salinity and dielectric constant (which determines emissivity) are needed for sensor systems such as SMOS and Aquarius that will monitor salinity from space in the near future. The purpose of the new measurements is to establish the dependence of the dielectric constant of seawater on salinity in contemporary units (e.g. psu) and to take advantage of modern instrumentation to increase the accuracy of these measurements. The measurement device is a brass cylindrical cavity 16cm in diameter and 7cm in height. The seawater is introduced into the cavity through a slender glass tube having an inner diameter of 0.1 mm. By assuming that this small amount of seawater slightly perturbs the internal fields in the cavity, perturbation theory can be employed. A simple formula results relating the real part of the dielectric constant to the change in resonant frequency of the cavity. In a similar manner, the imaginary part of the dielectric constant is related to the change in the cavity s Q. The expected accuracy of the cavity technique is better than 1% for the real part and 1 to 2% for the imaginary part. Presently, measurements of methanol have been made and agree with precision measurements in the literature to within 1% in both real and imaginary parts. Measurements have been made of the dielectric constant of seawater samples from Ocean Scientific in the United Kingdom with salinities of 10, 30, 35 and 38 psu. All measurements were made at room temperature. Plans to make measurements at a range of temperatures and salinities will be discussed.

  10. Effects of porous carbon additives and induced fluorine on low dielectric constant polyimide synthesized with an e-beam

    SciTech Connect

    Im, Ji Sun; Bae, Tae-Sung; Lee, Sung Kyu; Lee, Sei-Hyun; Jeong, Euigyung; Kang, Phil Hyun; Lee, Young-Seak

    2010-11-15

    We report the synthesis of a polyimide matrix with a low dielectric constant for application as an intercalation material between metal interconnections in electronic devices. Porous activated carbon was embedded in the polyimide to reduce the dielectric constant, and a thin film of the complex was obtained using the spin-coating and e-beam irradiation methods. The surface of the thin film was modified with fluorine functional groups to impart water resistance and reduce the dielectric constant further. The water resistance was significantly improved by the modification with hydrophobic fluorine groups. The dielectric constant was effectively decreased by porous activated carbon. The fluorine modification also resulted in a low dielectric constant on the polyimide surface by reducing the polar surface free energy. The dielectric constant of polyimide film decreased from 2.98 to 1.9 by effects of porous activated carbon additive and fluorine surface modification.

  11. Dielectric spectroscopy of high aspect ratio graphene-polyurethane nanocomposites

    NASA Astrophysics Data System (ADS)

    Jan, Rahim; Habib, Amir; Abbassi, Hina; Amir, Shahid

    2015-03-01

    High aspect ratio graphene nanosheets (GNS), prepared via liquid exfoliation, are homogeneously dispersed in thermoplastic polyurethane (TPU). Dielectric spectroscopy results are reported for these nanocomposites (up to 0.55 vol. % GNS) in the frequency range of 100 Hz to 5 MHz. The as-prepared GNS increased the AC conductivity 10-1000 times across the given frequency range. The dielectric constant is increased 5-6 times at 100 Hz for the maximum loading of GNS when compared with the pristine TPU, with subsequently high dielectric loss making them a suitable candidate for high energy dissipation applications such as EMI shielding. The temperature effects on the dielectric characteristics of 0.55 vol. % GNS/TPU nanocomposites beyond 400 K are more pronounced due to the interfacial and orientation polarization. Mechanical characteristics evaluation of GNS/TPU composites shows a marked increase in the ultimate tensile strength without compromising their ductility and stiffness. [Figure not available: see fulltext.

  12. Dielectric constants of liquid formamide, N-methylformamide and dimethylformamide via molecular Ornstein-Zernike theory

    NASA Astrophysics Data System (ADS)

    Richardi, Johannes; Krienke, Hartmut; Fries, Pascal H.

    1997-07-01

    Kirkwood factors, yielding dielectric constants, are calculated from pair correlation functions, which are numerical solutions of the hypernetted-chain approximation of molecular Ornstein-Zernike (MOZ) theory. The combined influence of the molecular polarizability and the hydrogen bond strength is investigated. Using a reasonable diameter for the hydrogen size in the amide group, the MOZ Kirkwood factors and dielectric constants are in good agreement with the experimental values. This is explained by the statistical correlations between the orientations of two near molecules. This is consistent with hydrogen bonds, forming networks in formamide and chains in N-methylformamide.

  13. Light induced dielectric constant of Alumina doped lead silicate glass based on silica sands

    NASA Astrophysics Data System (ADS)

    Diantoro, Markus; Natalia, Desi Ayu; Mufti, Nandang; Hidayat, Arif

    2016-04-01

    Numerous studies on glass ceramic compounds have been conducted intensively. Two major problems to be solved are to simplify the fabrication process by reducing melting temperature as well as improving various properties for various fields of technological application. To control the dielectric constant, the researchers generally use a specific dopant. So far there is no comprehensive study to control the dielectric constant driven by both of dopant and light intensity. In this study it is used Al2O3 dopant to increase the light induced dielectric constant of the glass. The source of silica was taken from local silica sands of Bancar Tuban. The sands were firstly leached using hydrochloric acid to improve the purity of silica which was investigated by means of XRF. Fabricating the glass samples were performed by using melting-glass method. Silica powder was mixed with various ratio of SiO2:Na2CO3:PbO:Al2O3. Subsequently, a mixture of various Al2O3 doped lead silicate glasses were melted at 970°C and directy continued by annealed at 300°C. The samples were investigated by XRD, FTIR, SEM-EDX and measuring dielectric constant was done using dc-capacitance meter with various light intensities. The investigation result of XRD patterns showed that the crystal structures of the samples are amorphous state. The introduction of Al2O3 does not alter the crystal structure, but significantly change the structure of the functional glass bonding PbO-SiO2 which was shown by the FTIR spectra. It was noted that some new peak peaks were exist in the doped samples. Measuring result of dielectricity shows that the dielectric constant of glass increases with the addition of Al2O3. Increasing the light intensity gives rise to increase their dielectric constant in general. A detail observation of the dielectric seen that there are discontinuous step-like of dielectric. Most likely a specific quantization mechanism occurs when glass exposed under light.

  14. Dramatic increase in the oxygen reduction reaction for platinum cathodes from tuning the solvent dielectric constant.

    PubMed

    Fortunelli, Alessandro; Goddard, William A; Sha, Yao; Yu, Ted H; Sementa, Luca; Barcaro, Giovanni; Andreussi, Oliviero

    2014-06-23

    Hydrogen fuel cells (FC) are considered essential for a sustainable economy based on carbon-free energy sources, but a major impediment are the costs. First-principles quantum mechanics (density functional theory including solvation) is used to predict how the energies and barriers for the mechanistic steps of the oxygen reduction reaction (ORR) over the fcc(111) platinum surface depend on the dielectric constant of the solvent. The ORR kinetics can be strongly accelerated by decreasing the effective medium polarizability from the high value it has in water. Possible ways to realize this experimentally are suggested. The calculated volcano structure for the dependence of rate on solvent polarization is considered to be general, and should be observed in other electrochemical systems. PMID:24828005

  15. Dielectric Constant of Titan's South Polar Region from Cassini Radio Science Bistatic Scattering Observations

    NASA Astrophysics Data System (ADS)

    Marouf, E.; Rappaport, N.; French, R.; Simpson, R.; Kliore, A.; McGhee, C.; Schinder, P.; Anabtawi, A.

    2008-12-01

    Four out of six Radio Science bistatic scattering (bistatic-radar) observations of Titan's surface completed during the Cassini nominal mission yielded detectable quasi-specular 3.6 cm-λ (X-band) surface echoes, making Titan the most distant solar system object for which bistatic echoes have been successfully detected. Right circularly polarized sinusoidal signal was transmitted by Cassini and both the right and left circularly polarized (RCP and LCP) surface reflected components were observed at the 70-m stations of NASA Deep Space Network. Cassini was maneuvered continuously to track the region of Titan's surface where mirror-like (quasi-specular) reflected signals may be observed. The experiments were designed for incidence angles θ close to the Brewster, or polarization, angle of likely surface compositions. Careful measurement of the system noise temperature allowed determination of the absolute power in each polarized echo component and hence their ratio. The polarization ratio, the known observation geometry, and Fresnel reflection theory were then used to determine the dielectric constant ɛ. Three near-equatorial (~ 5 to 15° S) observations on flyby T14 inbound and outbound and on flyby T34 inbound yielded weak but clearly detectable echoes. The echoes were intermittent along the ground track, indicating mostly rough terrain occasionally interrupted by patches of relatively flat areas. For the two observations on T14, polarization ratio measurements for two localized but widely separated surface regions (~ 15° S, ~ 14 and 140° W) conducted at angles θ ~ 56° and 64°, close to the Brewster angle for ices, imply ɛ ~ 1.6 for both regions, suggesting liquid hydrocarbons although alternative interpretations are possible (Marouf et al., 2006 Fall AGU, P11A- 07). In sharp contrast, a single high latitude (~81-86° S, ~ 45-155° W) observation on T27 inbound yielded much stronger surface echoes that lasted for almost the full duration of the experiment

  16. Plasma polymerized high energy density dielectric films for capacitors

    NASA Technical Reports Server (NTRS)

    Yamagishi, F. G.

    1983-01-01

    High energy density polymeric dielectric films were prepared by plasma polymerization of a variety of gaseous monomers. This technique gives thin, reproducible, pinhole free, conformable, adherent, and insoluble coatings and overcomes the processing problems found in the preparation of thin films with bulk polymers. Thus, devices are prepared completely in a vacuum environment. The plasma polymerized films prepared all showed dielectric strengths of greater than 1000 kV/cm and in some cases values of greater than 4000 kV/cm were observed. The dielectric loss of all films was generally less than 1% at frequencies below 10 kHz, but this value increased at higher frequencies. All films were self healing. The dielectric strength was a function of the polymerization technique, whereas the dielectric constant varied with the structure of the starting material. Because of the thin films used (thickness in the submicron range) surface smoothness of the metal electrodes was found to be critical in obtaining high dielectric strengths. High dielectric strength graft copolymers were also prepared. Plasma polymerized ethane was found to be thermally stable up to 150 C in the presence of air and 250 C in the absence of air. No glass transitions were observed for this material.

  17. Application of the compensated Arrhenius formalism to explain the dielectric constant dependence of rates for Menschutkin reactions.

    PubMed

    Petrowsky, Matt; Glatzhofer, Daniel T; Frech, Roger

    2013-11-21

    The dependence of the reaction rate on solvent dielectric constant is examined for the reaction of trihexylamine with 1-bromohexane in a series of 2-ketones over the temperature range 25-80 °C. The rate constant data are analyzed using the compensated Arrhenius formalism (CAF), where the rate constant assumes an Arrhenius-like equation that also contains a dielectric constant dependence in the exponential prefactor. The CAF activation energies are substantially higher than those obtained using the simple Arrhenius equation. A master curve of the data is observed by plotting the prefactors against the solvent dielectric constant. The master curve shows that the reaction rate has a weak dependence on dielectric constant for values approximately less than 10 and increases more rapidly for dielectric constant values greater than 10. PMID:24156502

  18. Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes.

    PubMed

    Wu, Di; Pak, Alexander J; Liu, Yingnan; Zhou, Yu; Wu, Xiaoyu; Zhu, Yihan; Lin, Min; Han, Yu; Ren, Yuan; Peng, Hailin; Tsai, Yu-Hao; Hwang, Gyeong S; Lai, Keji

    2015-12-01

    The dielectric constant or relative permittivity (ε(r)) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms but also the specific atomic arrangement in the crystal lattice. In this Letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nanoflakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured ε(r) increases monotonically as a function of the thickness and saturates to the bulk value at around 6-8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principles calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field. PMID:26575786

  19. Dependence of the dielectric constant of electrolyte solutions on ionic concentration: A microfield approach

    NASA Astrophysics Data System (ADS)

    Gavish, Nir; Promislow, Keith

    2016-07-01

    We present a microfield approach for studying the dependence of the orientational polarization of the water in aqueous electrolyte solutions upon the salt concentration and temperature. The model takes into account the orientation of the solvent dipoles due to the electric field created by ions, and the effect of thermal fluctuations. The model predicts a dielectric functional dependence of the form ɛ (c ) =ɛw-β L (3 α c /β ) ,β =ɛw-ɛms , where L is the Langevin function, c is the salt concentration, ɛw is the dielectric of pure water, ɛms is the dielectric of the electrolyte solution at the molten salt limit, and α is the total excess polarization of the ions. The functional form gives a remarkably accurate description of the dielectric constant for a variety of salts and a wide range of concentrations.

  20. Dependence of the dielectric constant of electrolyte solutions on ionic concentration: A microfield approach.

    PubMed

    Gavish, Nir; Promislow, Keith

    2016-07-01

    We present a microfield approach for studying the dependence of the orientational polarization of the water in aqueous electrolyte solutions upon the salt concentration and temperature. The model takes into account the orientation of the solvent dipoles due to the electric field created by ions, and the effect of thermal fluctuations. The model predicts a dielectric functional dependence of the form ɛ(c)=ɛ_{w}-βL(3αc/β),β=ɛ_{w}-ɛ_{ms}, where L is the Langevin function, c is the salt concentration, ɛ_{w} is the dielectric of pure water, ɛ_{ms} is the dielectric of the electrolyte solution at the molten salt limit, and α is the total excess polarization of the ions. The functional form gives a remarkably accurate description of the dielectric constant for a variety of salts and a wide range of concentrations. PMID:27575183

  1. Giant voltage-induced deformation of a dielectric elastomer under a constant pressure

    NASA Astrophysics Data System (ADS)

    Godaba, Hareesh; Foo, Choon Chiang; Zhang, Zhi Qian; Khoo, Boo Cheong; Zhu, Jian

    2014-09-01

    Dielectric elastomer actuators coupled with liquid have recently been developed as soft pumps, soft lenses, Braille displays, etc. In this paper, we investigate the performance of a dielectric elastomer actuator, which is coupled with water. The experiments demonstrate that the membrane of a dielectric elastomer can achieve a giant voltage-induced area strain of 1165%, when subject to a constant pressure. Both theory and experiment show that the pressure plays an important role in determining the electromechanical behaviour. The experiments also suggest that the dielectric elastomer actuators, when coupled with liquid, may suffer mechanical instability and collapse after a large amount of liquid is enclosed by the membrane. This failure mode needs to be taken into account in designing soft actuators.

  2. Correlation between the dielectric constant and porosity of nanoporous silica thin films deposited by the gas evaporation technique

    NASA Astrophysics Data System (ADS)

    Si, J. J.; Ono, H.; Uchida, K.; Nozaki, S.; Morisaki, H.; Itoh, N.

    2001-11-01

    Nanoporous silica thin films with low dielectric constants were deposited by gas evaporation of SiO2 nanoparticles in an argon atmosphere. With increasing gas pressure during the evaporation, the dielectric constant decreases, while the porosity increases. The correlation between the dielectric constant and porosity is well modeled by a serial connection of two capacitors, one with air and the other with SiO2 as the dielectric medium. This suggests that the dielectric constant of the nanoporous silica thin film using the gas evaporation technique is more effectively lowered by forming "uniformly" distributed voids of closed gaps than those of the nanoporous silica films with pores extending from the back to front surface. Therefore, the former nanoporous silica thin film requires less porosity to obtain a low dielectric constant and is regarded as an ideal low-k material.

  3. Process for lowering the dielectric constant of polyimides using diamic acid additives

    NASA Technical Reports Server (NTRS)

    Stoakley, Diane M. (Inventor); St.clair, Anne K. (Inventor)

    1990-01-01

    Linear aromatic polyimides with low dielectric constants are produced by adding a diamic acid additive to the polyamic acid resin formed by the condensation of an aromatic dianhydride with an aromatic diamine. The resulting modified polyimide is a better electrical insulator than state-of-the-art commercially available polyimides.

  4. Measurement of x-ray dielectric constants with coherent transition radiation

    SciTech Connect

    Moran, M.J.; Dahling, B.A.; Piestrup, M.A.; Berman, B.L.; Kephart, J.O.

    1986-06-06

    A technique for measuring the energy-resolved angular distribution of longitudinally coherent transition radiation generated in multiple-foil targets has been developed. This paper will demonstrate how data generated by these measurements can be used to determine the dielectric constants of materials in the soft x-ray spectral region.

  5. THE ONSET OF ELECTRICAL BREAKDOWN IN DUST LAYERS: II. EFFECTIVE DIELECTRIC CONSTANT AND LOCAL FIELD ENHANCEMENT

    EPA Science Inventory

    Part 1 of the work has shown that electrical breakdown in dust layers obeys Paschen's Law, but occurs at applied field values which appear too small to initiate the breakdown. In this paper the authors show how an effective dielectric constant characterizing the dust layer can be...

  6. Estimation of dielectric constant of lunar material by HF sounder observation

    NASA Astrophysics Data System (ADS)

    Kobayashi, T.; Ono, T.

    Space borne radio sounding observation has been one of indispensable items in planetary missions An HF sounder Lunar Radar Sounder LRS will be onboard SELENE a lunar exploration program of Japan in 2007 Its primary objective is subsurface geologic structure of the Moon Especially mare regions are of strong interest of investigators because of its relatively smooth surface it is thought that smooth surface allows us to see subsurface feature with less difficulty However even if a clear subsurface image is obtained the data does not provide us with quantitative information unless the dielectric constant of the lunar subsurface material We propose a technique to estimate the dielectric constant of lunar material that utilizes HF sounder data of closely located multiple orbits The technique is applied to SAR images that are produced from HF sounder data and stands on the fact that the apparent position of subsurface object varies as a function of the dielectric constant of subsurface material Assuming a uniform subsurface material the displacement of images of a subsurface target should be consistent with that of observation orbits if the correct dielectric constant of the subsurface material is assumed A numerical model on geometrical optics estimates that the proposed technique requires a synthetic aperture larger than about 50km provided that the orbit altitude is 100km subsurface target depth is a few km and that the observation frequency is 5MHz with 2MHz bandwidth Some laboratory experiments were conducted to demonstrate validity of the

  7. Low-dielectric-constant fluorinated diamond-like carbon thin films by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yi, Jeong Woo

    Fluorinated amorphous carbon (a-C:F) thin films are developed for a low dielectric constant interlayer dielectric material from hexafluorobenze (C 6F6) or 1,1,1,2-tetrafluoroethane (FCH2CF 4) as the source gas and argon as the diluent gas in an asymmetric capacitively coupled rf (radio frequency) plasma reactor and an inductively coupled plasma reactor. Effects of input rf power, fluorination, applied bias voltage and post annealing on the properties of a-C:F films are investigated. For depositing a-C:F films from highly diluted C6F6 (3%) and argon (97%) in the capacitively rf plasma reactor at 150 mTorr, the dielectric constant of the film increases from 2.0 to 2.8 as the rf power is increased from 10 W to 70 W, while the optical energy gap decreases from 2.6 eV to 1.9 eV and the transparency in a ultra-violet range is degraded. At input power of 100 W, the deposited film exhibits high residual stress of 40 MPa and easily peeled off by a Scotch tape test. This is due to high self-bias voltage (-230 V) developed at the substrate holder during deposition. When depositing amorphous carbon films from tetrafluoroethane (TFE) and methane in the capacitively coupled plasma reactor, the incorporation of fluorine in the film is increased with increasing TFE fraction in the feed gas mixture. The dielectric constant of the a-C:F film deposited from pure TFE is as low as 2.3, but the film exhibits poor thermal stability while a-C:H (diamond-like carbon) film deposited from pure methane has a dielectric constant of 3.8 and shows good thermal stability up to 400°C. As the TFE content in the feed is increased, the dielectric constant and the refractive index decrease while the transparency of the film is enhanced significantly. When depositing a-C:F films from C6F6 (4 sccm) and Ar (5 sccm) in the inductively coupled rf plasma reactor, the bias voltage (from a separate 100 KHz source) applied to the substrate holder affects the film properties significantly. As the negative bias

  8. Dielectric constant and loss tangent of Eccofoam PT, at 2.3 GHz, for various packing densities

    NASA Technical Reports Server (NTRS)

    Lane, F. L.

    1973-01-01

    The dielectric constant and loss tangent for Eccofoam PT, at various densities, are determined; the resulting density gradients are provided. The range of densites over which the dielectric constant and loss tangent are determined are from approximately 320 to 1280 kg/cu m (20 to 80 lb/cu ft).

  9. Charge Trapping Flash Memory With High-k Dielectrics

    NASA Astrophysics Data System (ADS)

    Eun, Dong Seog

    2011-12-01

    High capacity and affordable price of flash memory make portable electronic devices popular, which in turn stimulates the further scaling down effort of the flash memory cells. Indeed the flash memory cells have been scaling down aggressively and face several crucial challenges. As a result, the technology trend is shifting from the floating-gate cell to the charge-trap cell in order to overcome fatal interference problems between cells. There are critical problems in the charge-trap memory cell which will become main-stream in the near future. The first potential problem is related to the memory retention which is degraded by the charge leakage through thin tunnel dielectrics. The second is the reduction of charge-storage capacity in the scaled down SiN trapping layer. The third is the low operation-efficiency resulting from the methods used to solve the first two problems. Using high-k tunnel dielectrics can solve the first problem. The second problem can be overcome by adopting a high-k trapping dielectric. The dielectric constant of the blocking layer must be higher than those of the tunnel dielectric and the trapping dielectric in order to maintain operation efficiency. This dissertation study is focused on adopting high-k dielectrics in all three of the aforementioned layers for figure generations of flash memory technology. For the high-k tunnel dielectric, the MAD Si3N4 and the MAD Al2O3 are used to fabricate the MANNS structure and the MANAS structure. The MANNS structure has the advantage of reducing the erase voltage due to its low barrier height for holes. In addition, the retention characteristic of the MANAS structure is not sensitive to temperature. The reason is that the carrier transport in MAD Al2O3 is dominated by F-N tunneling, which is nearly independent of temperature. Adopting TiOx as the trapping dielectric forms the MATAS structure. Although the charge capacity of TiOx is not very high, the operating voltage can be reduced to less than 10V

  10. The measurement of the dielectric constant of concrete pipes and clay pipes

    NASA Astrophysics Data System (ADS)

    McGraw, David

    To optimize the effectiveness of the rehabilitation of underground utilities, taking in consideration limitation of available resources, there is a need for a cost effective and efficient sensing systems capable of providing effective, in real time and in situ, measurement of infrastructural characteristics. To carry out accurate non-destructive condition assessment of buried and above ground infrastructure such as sewers, bridges, pavements and dams, an advanced ultra-wideband (UWB) based radar was developed at Trenchless Technology Centre (TTC) and Centre for Applied Physics Studies (CAPS) at Louisiana Tech University (LTU). One of the major issues in designing the FCC compliant UWB radar was the contribution of the pipe wall, presence of complex soil types and moderate-to-high moisture levels on penetration depth of the electromagnetic (EM) energy. The electrical properties of the materials involved in designing the UWB radar exhibit a significant variation as a result of the moisture content, mineral content, bulk density, temperature and frequency of the electromagnetic signal propagating through it. Since no measurements of frequency dependence of the dielectric permittivity and conductivities of the pipe wall material in the FCC approved frequency range exist, in this thesis, the dielectric constant of concrete and clay pipes are measured over a microwave frequency range from 1 Ghz to 10 Ghz including the effects of moisture and chloride content. A high performance software package called MU-EPSLN(TM) was used for the calculations. Data reduction routines to calculate the complex permeability and permittivity of materials as well as other parameters are also provided. The results obtained in this work will be used to improve the accuracy of the numerical simulations and the performances of the UWB radar system.

  11. RAPID COMMUNICATION: Control of grain size and size effect on the dielectric constant of diamond films

    NASA Astrophysics Data System (ADS)

    Ye, Haitao; Sun, Chang Q.; Hing, Peter

    2000-12-01

    This work reports that the optimum diamond grain size can be controlled by adjusting the flow rate of Ar/H2 in the reaction chamber through orthogonal optimization. The dielectric properties of the diamond films were investigated using an RCL (resistance-capacitance-inductance) meter. It was found that (i) the dominating factors in controlling the grain size are in the following order: Ar/H2 gas ratio, gas total pressure, plasma power and substrate temperature; (ii) increasing the Ar gas fraction reduces the grain size of synthetic diamond films; and (iii) reducing the grain size lowers the dielectric constant. The grain size effect on the dielectric behaviour can be explained by the change of the crystal field caused by surface bond contraction of the nanosized particles.

  12. Sub-THz complex dielectric constants of smectite clay thin samples with Na+/Ca++ ions

    NASA Astrophysics Data System (ADS)

    Rahman, Rezwanur; McCarty, Douglas K.; Prasad, Manika

    2015-09-01

    We implement a technique to characterize the electromagnetic properties at frequencies 100 to 165 GHz (3 cm-1 to 4.95 cm-1) of oriented smectite samples using an open cavity resonator connected to a submillimeter wave VNA (Vector Network Analyzer). We measured dielectric constants perpendicular to the bedding plane on oriented Na+ ion and Ca++ ion stabilized smectite samples deposited on a glass slide at ambient laboratory conditions (room temperature and room light). The clay layer is much thinner (˜30 μm) than the glass substrate (˜2.18 mm). The real part of dielectric constant, ɛre, is essentially constant over this frequency range but is larger in Na+ ion than in Ca++ ion infused clay. The total electrical conductivity (associated with the imaginary part of dielectric constant, ɛim) of both samples increases monotonically at lower frequencies (<110 GHz) but shows rapid increase for Na+ ions in the regime > 110 GHz. The dispersion of the samples display a dependence on the ionic strength in the clay interlayers, i.e., ζ potential in the Stern layers.

  13. Utilizing Calibrated GPS Reflected Signals to Estimate Soil Reflectivity and Dielectric Constant: Results from SMEX02

    NASA Technical Reports Server (NTRS)

    Katzberg, Stephen J.; Torres, Omar; Grant, Michael S.; Masters, Dallas

    2006-01-01

    Extensive reflected GPS data was collected using a GPS reflectometer installed on an HC130 aircraft during the Soil Moisture Experiment 2002 (SMEX02) near Ames, Iowa. At the same time, widespread surface truth data was acquired in the form of point soil moisture profiles, areal sampling of near-surface soil moisture, total green biomass and precipitation history, among others. Previously, there have been no reported efforts to calibrate reflected GPS data sets acquired over land. This paper reports the results of two approaches to calibration of the data that yield consistent results. It is shown that estimating the strength of the reflected signals by either (1) assuming an approximately specular surface reflection or (2) inferring the surface slope probability density and associated normalization constants give essentially the same results for the conditions encountered in SMEX02. The corrected data is converted to surface reflectivity and then to dielectric constant as a test of the calibration approaches. Utilizing the extensive in-situ soil moisture related data this paper also presents the results of comparing the GPS-inferred relative dielectric constant with the Wang-Schmugge model frequently used to relate volume moisture content to dielectric constant. It is shown that the calibrated GPS reflectivity estimates follow the expected dependence of permittivity with volume moisture, but with the following qualification: The soil moisture value governing the reflectivity appears to come from only the top 1-2 centimeters of soil, a result consistent with results found for other microwave techniques operating at L-band. Nevertheless, the experimentally derived dielectric constant is generally lower than predicted. Possible explanations are presented to explain this result.

  14. High thermal conductivity lossy dielectric using a multi layer configuration

    DOEpatents

    Tiegs, Terry N.; Kiggans, Jr., James O.

    2003-01-01

    Systems and methods are described for loss dielectrics. A loss dielectric includes at least one high dielectric loss layer and at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. A method of manufacturing a loss dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. The systems and methods provide advantages because the loss dielectrics are less costly and more environmentally friendly than the available alternatives.

  15. Applications of high dielectric materials in high field magnetic resonance

    NASA Astrophysics Data System (ADS)

    Haines, Kristina Noel

    At high magnetic fields, radiation losses, wavelength effects, self-resonance, and the high resistance of components all contribute to losses in conventional RF MRI coil designs. The hypothesis tested here is that these problems can be combated by the use of high permittivity ceramic materials at high fields. High permittivity ceramic dielectric resonators create strong uniform magnetic fields in compact structures at high frequencies and can potentially solve some of the challenges of high field coil design. In this study NMR probes were constructed for operation at 600 MHz (14.1 Tesla) and 900 MHz (21.1 Tesla) using inductively fed CaTiO3 (relative permittivity of 156-166) cylindrical hollow bore dielectric resonators. The designs showed the electric field is largely confined to the dielectric itself, with near zero values in the hollow bore, which accommodates the sample. The 600 MHz probe has an unmatched Q value greater than 2000. Experimental and simulation mapping of the RF field show good agreement, with the ceramic resonator giving a pulse width approximately 25% less than a loop gap resonator of similar inner dimensions. High resolution images, with voxel dimensions less than 50 microm3, have been acquired from fixed zebrafish samples, showing excellent delineation of several fine structures. The 900 MHz probe has an unmatched Q value of 940 and shows Q performance five times better than Alderman-Grant and loop-gap resonators of similar dimensions. High resolution images were acquired of an excised mouse spinal cord (25 microm 3) and an excised rat soleus muscle (20 microm3). The spatial distribution of electromagnetic fields within the human body can be tailored using external dielectric materials. Here, a new material is introduced with high dielectric constant and low background MRI signal. The material is based upon metal titanates, which can be made into geometrically formable suspensions in de-ionized water. The suspension's material properties are

  16. Sol–gel composite material characteristics caused by different dielectric constant sol–gel phases

    NASA Astrophysics Data System (ADS)

    Kimoto, Keisuke; Matsumoto, Makoto; Kaneko, Tsukasa; Kobayashi, Makiko

    2016-07-01

    Ultrasonic transducers prepared by a sol–gel composite method have been investigated in the field of nondestructive testing (NDT). Sol–gel composite materials could be ideal piezoelectric materials for ultrasonic transducer applications in the NDT field, and a new sol–gel composite with desirable characteristics has been developed. Three kinds of sol–gel composite materials composed of different dielectric constant sol–gel phases, Pb(Zr,Ti)O3 (PZT), Bi4Ti3O12 (BiT), and BaTiO3 (BT), and the same piezoelectric powder phase, PbTiO3 (PT), were fabricated and their properties were compared quantitatively. As a result, the PT/BT, sol–gel composite with the highest dielectric constant sol–gel phase showed the highest d 33 and signal strength. In addition, only PT/BT was successfully poled by room-temperature corona poling with reasonable signal strength.

  17. Improved ground-state electronic structure and optical dielectric constants with a semilocal exchange functional

    NASA Astrophysics Data System (ADS)

    Vlček, Vojtěch; Steinle-Neumann, Gerd; Leppert, Linn; Armiento, Rickard; Kümmel, Stephan

    2015-01-01

    A recently published generalized gradient approximation functional within density functional theory (DFT) has shown, in a few paradigm tests, an improved KS orbital description over standard (semi)local approximations. The characteristic feature of this functional is an enhancement factor that diverges like s ln(s ) for large reduced density gradients s which leads to unusual properties. We explore the improved orbital description of this functional more thoroughly by computing the electronic band structure, band gaps, and the optical dielectric constants in semiconductors, Mott insulators, and ionic crystals. Compared to standard semilocal functionals, we observe improvement in both the band gaps and the optical dielectric constants. In particular, the results are similar to those obtained with orbital functionals or by perturbation theory methods in that it opens band gaps in systems described as metallic by standard (semi)local density functionals, e.g., Ge, α -Sn, and CdO.

  18. A molecular site-site integral equation that yields the dielectric constant

    NASA Astrophysics Data System (ADS)

    Dyer, Kippi M.; Perkyns, John S.; Stell, George; Pettitt, B. Montgomery

    2008-09-01

    Our recent derivation [K. M. Dyer et al., J. Chem. Phys. 127, 194506 (2007)] of a diagrammatically proper, site-site, integral equation theory using molecular angular expansions is extended to polar fluids. With the addition of atomic site charges we take advantage of the formal long-ranged potential field cancellations before renormalization to generate a set of numerically stable equations. Results for calculations in a minimal (spherical) angular basis set are presented for the radial distribution function, the first dipolar (110) projection, and the dielectric constant for two model diatomic systems. All results, when compared to experiment and simulation, are a significant quantitative and qualitative improvement over previous site-site theories. More importantly, the dielectric constant is not trivial and close to simulation and experiment.

  19. The super- and sub-critical effects for dielectric constant in diethyl ether.

    PubMed

    Drozd-Rzoska, Aleksandra; Rzoska, Sylwester J

    2016-06-14

    Results of dielectric constant (ε) studies in diethyl ether for the surrounding of the gas - liquid critical point, TC - 130 K < T < TC + 50 K, are presented. The analysis recalls the physics of critical phenomena for portraying ε (T) evolution along branches of the coexistence curve, along its diameter (d(T)) and in the supercritical domain for T > TC. For the ultrasound sonicated system, the split into coexisting phases disappeared and dielectric constant approximately followed the pattern of the diameter. This may indicate the possibility of the extension of the "supercritical technology" into the ultrasound "homogenized" subcritical domain: the "strength" and the range of the precritical effect of d(T) are ca. 10× larger than for ε (T > TC). PMID:27306017

  20. The super- and sub-critical effects for dielectric constant in diethyl ether

    NASA Astrophysics Data System (ADS)

    Drozd-Rzoska, Aleksandra; Rzoska, Sylwester J.

    2016-06-01

    Results of dielectric constant (ɛ) studies in diethyl ether for the surrounding of the gas - liquid critical point, TC - 130 K < T < TC + 50 K, are presented. The analysis recalls the physics of critical phenomena for portraying ɛ (T) evolution along branches of the coexistence curve, along its diameter (d(T)) and in the supercritical domain for T > TC. For the ultrasound sonicated system, the split into coexisting phases disappeared and dielectric constant approximately followed the pattern of the diameter. This may indicate the possibility of the extension of the "supercritical technology" into the ultrasound "homogenized" subcritical domain: the "strength" and the range of the precritical effect of d(T) are ca. 10× larger than for ɛ (T > TC).

  1. Complex dielectric constants for selected near-millimeter-wave materials at 245 GHz

    NASA Technical Reports Server (NTRS)

    Dutta, J. M.; Jones, C. R.; Dave, H.

    1986-01-01

    A double-beam instrument developed in this laboratory has been used to measure the complex dielectric constant of selected materials at 245 GHz. It is reported here the results for crystalline quartz, fused silica (Spectrosil WF and Dynasil 4000), beryllia (iso-pressed), boron nitride (hot-pressed), and a nickel ferrite (Trans-Tech 2-111). Results are compared with the data obtained by other researchers.

  2. Pulsed high-voltage dielectric properties of ethylene glycol/water mixtures

    NASA Astrophysics Data System (ADS)

    Fenneman, David B.

    1982-12-01

    Measurements of the (complex) dielectric constant, intrinsic time constant, and electrical breakdown strength of highly purified ethylene glycol/water mixtures as functions of temperature and mixture ratio are presented. Over the frequency range from 0.5 to 108 MHz, the dielectric constant is found to be well represented by a simple Debye model. When cooled to near their freezing points, these mixtures have dielectric constants of the same order as pure water (˜80) but with intrinsic time constants at least an order of magnitude greater than water. The mixtures are found to support fields greater than 15 MV/m for periods exceeding a millisecond. The observed high-voltage decay is nonsimple due to the phenomenon of charge injection. The ability to sustain high fields for millisecond time scales suggests the use of such mixtures as the dielectric in the pulse forming lines of large-pulse power machines.

  3. Accurate Measurements of the Dielectric Constant of Seawater at L Band

    NASA Technical Reports Server (NTRS)

    Lang, Roger H.; Utku, Cuneyt; Tarkocin, Yalcin; LeVine, David M.

    2010-01-01

    This report describes measurements of the dielectric constant of seawater at a frequency of 1.413 GHz that is at the center of the L-Sand radiometric protected frequency spectrum. Aquarius will be sensing the sea surface salinity from space in this band. The objective of the project is to refine the model function for the dielectric constant as a function of salinity and temperature so that remote sensing measurements can be made with the accuracy needed to meet the measurement goals (0.2 psu) of the Aquarius mission. The measurements were made, using a microwave cavity operated in the transmission configuration. The cavity's temperature was accurately regulated to 0.02 C by immersing it in a temperature controlled bath of distilled water and ethanol glycol. Seawater had been purchased from Ocean Scientific International Limited (OS1L) at salinities of 30, 35 and 38 psu. Measurements of these seawater samples were then made over a range of temperatures, from l0 C to 35 C in 5 C intervals. Repeated measurements were made at each temperature and salinity, Mean values and standard deviations were then computed. Total error budgets indicated that the real and imaginary parts of the dielectric constant had a relative accuracy of about l%.

  4. Dielectric constant enhancement of epoxy thermosets via formation of polyelectrolyte nanophases.

    PubMed

    Cong, Houluo; Li, Jingang; Li, Lei; Zheng, Sixun

    2014-12-18

    Poly(ethylene oxide)-block-poly(sodium p-styrenesulfonate) (PEO-b-PSSNa) diblock copolymer was synthesized and then incorporated into epoxy to obtain the nanostructured epoxy thermosets containing polyelectrolyte nanophases. This PEO-b-PSSNa diblock copolymer was synthesized via the radical polymerization of p-styrenesulfonate mediated with 4-cyano-4-(thiobenzoylthio)valeric ester-terminated poly(ethylene oxide). The formation of polyelectrolyte (i.e., PSSNa) nanophases in epoxy followed a self-assembly mechanism. The precursors of epoxy acted as the selective solvent of the diblock copolymer, and thus, the self-assembled nanostructures were formed. The self-organized nanophases were fixed through the subsequent curing reaction. By means of transmission electron microscopy (TEM) and small-angle X-ray scattering (SAXS), the morphologies of the nanostructured epoxy thermosets containing PSSNa nanophases were investigated. In the glassy state, the epoxy matrixes were significantly reinforced by the spherical PSSNa nanodomains, as evidenced by dynamic mechanical analysis. The measurement of dielectric properties showed that, with the incorporation of PSSNa nanophases, the dielectric constants of the epoxy thermoset were significantly increased. Compared to the control epoxy, the dielectric loss of the nanostructured thermosets still remained at quite a low level, although the values of dielectric loss were slightly increased with inclusion of PSSNa nanophases. PMID:25482332

  5. Use of the finite-element method for a dielectric-constant gas-thermometry experiment

    NASA Astrophysics Data System (ADS)

    Zandt, T.; Gaiser, C.; Fellmuth, B.; Haft, N.; Thiele-Krivoi, B.; Kuhn, A.

    2013-09-01

    The finite-element method is a well-established computational methodology for the numerical treatment of partial differential equations. It is primarily used for solving problems in applied engineering and science. In previous publications, we have shown that the method is suitable to solve problems in temperature metrology, for instance to predict temperature profiles and thermal equilibration processes in complex measurement setups. In this paper, the method is used for a primary thermometry experiment, namely dielectric-constant gas thermometry. Within the framework of an international project directed to the new definition of the base unit kelvin, measurements were performed at the triple point of water in order to determine the Boltzmann constant k. The finite-element method was used for the data evaluation in different ways: calculation of the effective compressibility of the measuring capacitor by describing the deformation of its electrodes under the influence of the pressure of the gas, the dielectric constant of which has to be determined; calculation of resonance frequencies for the determination of the elastic constants of the electrode material by resonant ultrasound spectroscopy; electrostatic simulations for calculating capacitance values; estimation of uncertainty components, which allowed to draw conclusions concerning the future reduction of uncertainty components.

  6. High dielectric insulation coating for time domain reflectometry soil moisture sensor

    NASA Astrophysics Data System (ADS)

    Fujiyasu, Y.; Pierce, C. E.; Fan, L.; Wong, C. P.

    2004-04-01

    Insulation coating is often applied to time domain reflectometry (TDR) soil moisture sensors to reduce the conduction loss of energy. However, because of low dielectric constants of common plastic insulation materials, sensitivity is reduced, and the measurements are strongly dependent on coating thickness. Analytical studies clearly showed that these unwanted features could be mitigated if a high dielectric material is used for coating. An epoxy-ceramic nanocomposite was selected as a high dielectric insulation material because of its high dielectric constant and high adhesion. Experimental work using this composite indicated that the material has the potential to be used as a high dielectric coating for TDR soil moisture probes. On the basis of the results of these analytical and experimental studies a framework for designing an improved epoxy-ceramic composite for coating TDR soil moisture sensors is suggested.

  7. Anomalous change in dielectric constant of CaCu3Ti4O12 under violet-to-ultraviolet irradiation

    NASA Astrophysics Data System (ADS)

    Masingboon, C.; Eknapakul, T.; Suwanwong, S.; Buaphet, P.; Nakajima, H.; Mo, S.-K.; Thongbai, P.; King, P. D. C.; Maensiri, S.; Meevasana, W.

    2013-05-01

    The influence of light illumination on the dielectric constant of CaCu3Ti4O12 (CCTO) polycrystals is studied in this work. When exposed to 405-nm laser light, a reversible enhancement in the room temperature capacitance as high as 22% was observed, suggesting application of light-sensitive capacitance devices. To uncover the microscopic mechanisms mediating this change, we performed electronic structure measurements, using photoemission spectroscopy, and measured the electrical conductivity of the CCTO samples under different conditions of light exposure and oxygen partial pressure. Together, these results suggest that the large capacitance enhancement is driven by oxygen vacancies induced by the irradiation.

  8. Lead- and alkali-metal-free BaTiO3-Bi(Mg0.5Ti0.5)O3-BiFeO3 solid-solution thin films with high dielectric constant prepared on Si substrates by solution-based method

    NASA Astrophysics Data System (ADS)

    Kimura, Junichi; Mohamed-Tahar, Chentir; Shimizu, Takao; Uchida, Hiroshi; Funakubo, Hiroshi

    2014-09-01

    Lead- and alkali-metal-free BaTiO3-Bi(Mg0.5Ti0.5)O3-BiFeO3 solid-solution thin films were prepared on (111)cSrRuO3/(111)Pt/TiO2/SiO2/(100)Si substrates by chemical solution deposition (CSD) and their crystal structure and dielectric properties were investigated. The lattice spacing as a function of z/(x + z) in xBaTiO3-0.1Bi(Mg0.5Ti0.5)O3-zBiFeO3 indicated the existence of phase boundaries (pseudocubic/rhombohedral) in the range of z/(x + z) = 0.33-0.56, where the relatively high relative dielectric constant, ɛr, of above 800 was obtained. On the other hand, dielectric loss, tan δ, of below 0.2 was confirmed in the range z/(x + z) = 0-0.87, which rapidly increased toward z/(x + z) = 1.0. The relatively high ɛr values of these films deposited on Si substrates by a solution-based process suggest that they can be used as alternative to Pb(Zr,Ti)O3, KNbO3, and (Bi1/2Na1/2)TiO3-based films.

  9. Method for producing high dielectric strength microvalves

    SciTech Connect

    Kirby, Brian J.; Reichmuth, David S.; Shepodd, Timothy J.

    2006-04-04

    A microvalve having a cast-in-place and lithographically shaped mobile, polymer monolith for fluid flow control in microfluidic devices and method of manufacture. The microvalve contains a porous fluorinated polymer monolithic element whose pores are filled with an electrically insulating, high dielectric strength fluid, typically a perfluorinated liquid. This combination provides a microvalve that combines high dielectric strength with extremely low electrical conductivity. These microvalves have been shown to have resistivities of at least 100 G.OMEGA. and are compatible with solvents such as water at a pH between 2.7 and 9.0, 1-1 propanol, acetonitrile, and acetone.

  10. Computing the Kirkwood g-Factor by Combining Constant Maxwell Electric Field and Electric Displacement Simulations: Application to the Dielectric Constant of Liquid Water.

    PubMed

    Zhang, Chao; Hutter, Jürg; Sprik, Michiel

    2016-07-21

    In his classic 1939 paper, Kirkwood linked the macroscopic dielectric constant of polar liquids to the local orientational order as measured by the g-factor (later named after him) and suggested that the corresponding dielectric constant at short-range is effectively equal to the macroscopic value just after "a distance of molecular magnitude" [ Kirkwood, J. Chem. Phys., 1939, 7, 911 ]. Here, we show a simple approach to extract the short-ranged Kirkwood g-factor from molecular dynamics (MD) simulation by superposing the outcomes of constant electric field E and constant electric displacement D simulations [ Zhang and Sprik, Phys. Rev. B: Condens. Matter Mater. Phys., 2016, 93, 144201 ]. Rather than from the notoriously slow fluctuations of the dipole moment of the full MD cell, the dielectric constant can now be estimated from dipole fluctuations at short-range, accelerating the convergence. Exploiting this feature, we computed the bulk dielectric constant of liquid water modeled in the generalized gradient approximation (PBE) to density functional theory and found it to be at least 40% larger than the experimental value. PMID:27352038

  11. Two percolation thresholds and remarkably high dielectric permittivity in pristine carbon nanotube/elastomer composites

    NASA Astrophysics Data System (ADS)

    Shehzad, Khurram; Hakro, Ayaz Ali; Zeng, You; Yao, Shang-Hong; Xiao-Hong, Yi; Mumtaz, Muhammad; Nadeem, Kashif; Khisro, Nasir Said; Dang, Zhi-Min

    2015-11-01

    Pristine carbon nanotube (CNT)/elastomer composites were fabricated using pristine multi-walled carbon nanotubes and a thermoplastic elastomer. These composites exhibited a unique phenomenon of two electrical percolation thresholds that invoked very high dielectric values for the resulting composites. The first percolation was associated with a relatively low dielectric constant value of about 100, while in the vicinity of the second percolation threshold a very high dielectric constant value of 8,000 was achieved. The presence of two percolation thresholds was attributed to the unique distribution patterns of CNTs that ensued in a CNT/elastomer composite system with unique electrical properties.

  12. Dielectric constant estimation of the uppermost Basal Unit layer in the martian Boreales Scopuli region

    NASA Astrophysics Data System (ADS)

    Lauro, Sebastian E.; Mattei, Elisabetta; Soldovieri, Francesco; Pettinelli, Elena; Orosei, Roberto; Vannaroni, Giuliano

    2012-05-01

    An electromagnetic inversion model has been applied to echoes from the subsurface sounding Shallow Radar (SHARAD) to retrieve the dielectric properties of the uppermost Basal Unit (BU) beneath the North Polar Layered Deposits of Mars. SHARAD data have been carefully selected to satisfy the assumption of the inversion model which requires a stratigraphy consisting of mostly plane parallel layers. The resulting values of the dielectric constant have been interpreted in terms of a variable percentage of dust in an ice-dust mixture through the use of a mixing model for dielectric properties. The resulting dust content exceeds 65%, reaching perhaps 95%, depending on the permittivity values assumed for the dust. Such a concentration is higher than that obtained by Selvans et al. (Selvans, M.M., Plaut, J.J., Aharonson, O. [2010]. J. Geophys. Res, 115, E09003). This discrepancy could be justified considering that our observations refer to the uppermost BU layer, whereas Selvans et al. (Selvans, M.M., Plaut, J.J., Aharonson, O. [2010]. J. Geophys. Res, 115, E09003) probed the BU full thickness. Moreover, if the BU is considered spatially inhomogeneous, with very different dust content and thickness (Tanaka, K.L., Skinner, J.A., Fortezzo, C.M., Herkenhoff, K.E., Rodriguez, J.A.P., Bourke, M.C., Kolb, E.J., Okubo, C.H. [2008]. Icarus, 196, 318-358), the discrepancy could be furtherly reconciled.

  13. Corrosion in low dielectric constant Si-O based thin films: Buffer concentration effects

    SciTech Connect

    Zeng, F. W.; Lane, M. W.; Gates, S. M.

    2014-05-15

    Organosilicate glass (OSG) is often used as an interlayer dielectric (ILD) in high performance integrated circuits. OSG is a brittle material and prone to stress-corrosion cracking reminiscent of that observed in bulk glasses. Of particular concern are chemical-mechanical planarization techniques and wet cleans involving solvents commonly encountered in microelectronics fabrication where the organosilicate film is exposed to aqueous environments. Previous work has focused on the effect of pH, surfactant, and peroxide concentration on the subcritical crack growth of these films. However, little or no attention has focused on the effect of the conjugate acid/base concentration in a buffer. Accordingly, this work examines the “strength” of the buffer solution in both acidic and basic environments. The concentration of the buffer components is varied keeping the ratio of acid/base and therefore pH constant. In addition, the pH was varied by altering the acid/base ratio to ascertain any additional effect of pH. Corrosion tests were conducted with double-cantilever beam fracture mechanics specimens and fracture paths were verified with ATR-FTIR. Shifts in the threshold fracture energy, the lowest energy required for bond rupture in the given environment, G{sub TH}, were found to shift to lower values as the concentration of the base in the buffer increased. This effect was found to be much larger than the effect of the hydroxide ion concentration in unbuffered solutions. The results are rationalized in terms of the salient chemical bond breaking process occurring at the crack tip and modeled in terms of the chemical potential of the reactive species.

  14. Modification of low dielectric constant materials for ULSI multilevel interconnection by ion implantation

    NASA Astrophysics Data System (ADS)

    Roy, Alok Nandini Usha

    As integrated circuit (IC) dimensions continue to decrease, RC delay, cross-talk noise, and power dissipation of the interconnect structure become limiting factors for ultra-large-scale integration of integrated circuits. Low dielectric constant materials are being introduced and developed to replace silicon dioxide as inter level dielectrics into current interconnect technologies to meet RC delay goals and minimize cross-talk. These low kappa films generally have dielectric constants less than 3 (vs. 4 for silicon dioxide) and very poor mechanical strength. The elastic modulus (E) of the low kappa film is typically less than 10Gpa, compared with 70Gpa for SiO2. The poor mechanical strength of the low kappa dielectric films increases the risk of thermo-mechanical failures within the Cu/low kappa interconnect structure; e.g. thin film delamination and cracking. Maintaining the mechanical integrity of the low kappa films with the stresses of fab processing, packaging and reliability testing has proven challenging. Therefore, surface hardening is necessary to withstand processing (e.g. CMP). This research work will address the methods to enhance the mechanical strength of low dielectric films. Results of two classes of material (i.e. Xerogel (porous) and methyl silsesquioxane (MSQ (organic)) are discussed. Thin films of Ultra-Low kappa materials such as Xerogel (kappa = 1.76) and porous MSQ (kappa = 2.2) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm-2 and 1 x 1016 cm-2 dose at energies varying from 20 to 150 keV at room temperature. In this work we showed that the surface hardness of the porous films can be improved five times as compared to the as-deposited porous films by implanting Ar with 1 x 10 16 cm-2 doses at 50 keV, sacrificing only a slight increase (˜15%) in dielectric constant (e.g., from 1.76 to 2.0). The hardness persists after 450°C annealing. The ion implantation process suppressed the moisture uptake in the porous low

  15. Characterizing the complex permittivity of highdielectrics using enhanced field method

    SciTech Connect

    Chao, Hsien-Wen; Wong, Wei-Syuan; Chang, Tsun-Hsu

    2015-11-15

    This paper proposed a method to characterize the complex permittivities of samples based on the enhancement of the electric field strength. The enhanced field method significantly improves the measuring range and accuracy of the samples’ electrical properties. Full-wave simulations reveal that the resonant frequency is closely related to the dielectric constant of the sample. In addition, the loss tangent can be determined from the measured quality factor and the just obtained dielectric constant. Materials with low dielectric constant and very low loss tangent are measured for benchmarking and the measured results agree well with previous understanding. Interestingly, materials with extremely high dielectric constants (ε{sub r} > 50), such as titanium dioxide, calcium titanate, and strontium titanate, differ greatly as expected.

  16. Study of Fluorine Addition Influence in the Dielectric Constant of Diamond-Like Carbon Thin Film Deposited by Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Trippe, S. C.; Mansano, R. D.

    The hydrogenated amorphous carbon films (a-C:H) or DLC (Diamond-Like Carbon) films are well known for exhibiting high electrical resistivity, low dielectric constant, high mechanical hardness, low friction coefficient, low superficial roughness and also for being inert. In this paper, we produced fluorinated DLC films (a-C:F), and studied the effect of adding CF4 on the above-mentioned properties of DLC films. These films were produced by a reactive RF magnetron sputtering system using a target of pure carbon in stable graphite allotrope. We performed measurements of electrical characteristic curves of capacitance as a function of applied tension (C-V) and current as a function of the applied tension (I-V). We showed the dielectric constant (k) and the resistivity (ρ) as functions of the CF4 concentration. On films with 65% CF4, we found that k = 2.7, and on films with 70% CF4, ρ = 12.3 × 1011 Ω cm. The value of the electrical breakdown field to films with 70% CF4 is 5.3 × 106 V/cm.

  17. Theoretical Study of the Transverse Dielectric Constant of Superlattices and Their Alloys. Ph.D Thesis

    NASA Technical Reports Server (NTRS)

    Kahen, K. B.

    1986-01-01

    The optical properties of III to V binary and ternary compounds and GaAs-Al(x)Ga(1-x)As superlattices are determined by calculating the real and imaginary parts of the transverse dielectric constant. Emphasis is given to determining the influence of different material and superlattice parameters on the values of the index of refraction and absorption coefficient. In order to calculate the optical properties of a material, it is necessary to compute its electronic band structure. This was accomplished by introducing a partition band structure approach based on a combination of the vector k x vector p and nonlocal pseudopotential techniques. The advantages of this approach are that it is accurate, computationally fast, analytical, and flexible. These last two properties enable incorporation of additional effects into the model, such as disorder scattering, which occurs for alloy materials and excitons. Furthermore, the model is easily extended to more complex structures, for example multiple quantum wells and superlattices. The results for the transverse dielectric constant and absorption coefficient of bulk III to V compounds compare well with other one-electron band structure models and the calculations show that for small frequencies, the index of refraction is determined mainly by the contibution of the outer regions of the Brillouin zone.

  18. Microwave dielectric constant of liquid hydrocarbons: Application to the depth estimation of Titan's lakes

    NASA Astrophysics Data System (ADS)

    Paillou, Philippe; Mitchell, Karl; Wall, Stephen; Ruffié, Gilles; Wood, Charles; Lorenz, Ralph; Stofan, Ellen; Lunine, Jonathan; Lopes, Rosaly; Encrenaz, Pierre

    2008-03-01

    Cassini RADAR reveals the surface of Titan since flyby Ta acquired on October 2004. The RADAR instrument discovered volcanic structures, craters, dunes, channels, lakes and seas. In particular, flyby T16 realized in July 2006 imaged tens of radar-dark features close to Titan's north pole. They are interpreted as lakes filled with liquid hydrocarbons - mainly methane, a key material in the geologic and climatic history of Titan. In order to perform quantitative analysis and modeling of the radar response of Titan's lakes, the dielectric constant of liquid hydrocarbons is a crucial parameter, in particular to estimate the radar wave attenuation. We present here first measurements of the dielectric constant of LNG (Liquefied Natural Gas), mainly composed of methane, at Ku-band (10-13 GHz): we obtained a value $\\varepsilon$ = 1.75 - 0.002j. This value is used to model the radar backscattering of lakes observed during T16 flyby. Using a two-layer scattering model, we derive a relationship that is used to estimate a minimum depth for Titan's lakes. The proposed relationship is also coherent with the observation that the larger and then the deeper lakes are also the darker in radar images.

  19. Molecular properties of alternative refrigerants derived from dielectric-constant measurements

    SciTech Connect

    Barao, M.T.; Castro, C.A.N. de; Mardolcar, U.V.

    1997-03-01

    A review of the current work in Lisbon on the measurement of the dielectric constant of the liquid phase of some environmentally acceptable refrigerants proposed as alternative replacements of the chlorofluorocarbons (CFCs), responsible for the destruction of the ozone layer, is presented. Measurements on HCFC 141b, HCFC 142b, HCFC 123, HFC 134a, HFC 152a, and HFC 32 samples of stated purities of 99.8 mass % or better were performed as a function of pressure and temperature, in the temperature range from 200 to 300 K and at pressures up to 20 MPa. The ratio of the capacitances of a cell filled with the sample and under vacuum was measured with a direct capacitance method. The dielectric-constant measurements have a repeatability of 0.003% and an accuracy of 0.1%. The theory developed by Vedam et al. based on the Eulerian Strain and the Kirkwood equation for the variation of the modified molar polarization with temperature and density were applied to obtain the dipole moments of the refrigerants in the liquid state, to obtain a physical insight of the molecular behavior, and to understand the equilibrium configuration of these liquids.

  20. Measurements of the complex dielectric constant of sand and dust particles at 11 GHz

    NASA Astrophysics Data System (ADS)

    Al-Rizzo, Hussain M.; Al-Hafid, Hafid T.

    1988-03-01

    Measurements are reported of the refractive index (Delta-n) and loss tangent (tan delta) of dust particles in a laboratory-simulated model of dust storms, carried out at 11 GHz utilizing a confocal microwave open-cavity resonator. Four samples were used namely, sandy, silty, clayey silt, and clayey, for concentrations varying from 10-4 to 4 x 10-3 g/cu cm. The particle-size distribution (PSD) of each sample was measured by seiving along with the hydrometer technique. Dielectric-constant measurements were also conducted at bulk concentrations using the standing-wave technique for the dry samples and as a function of volumetric moisture content for up to 0.5 cu cm/cu cm. The complex dielectric constant of the dust particle material was evaluated by two approaches. In one the data for permittivities obtained over the whole range of measured concentrations were extrapolated to the particle densities of the samples. In the other a mixing formula was utilized for the determination of epsilon(s) from permittivities measured at bulk concentrations.

  1. Supercritical carbon dioxide extraction of porogens for the preparation of ultralow-dielectric-constant films

    SciTech Connect

    Toney, Michael F

    2003-06-20

    Supercritical carbon dioxide (SCCO2) extraction of a CO{sub 2}-soluble poly(propylene glycol) (PPG) porogen from poly(methylsilsesquioxane) (PMSSQ) cured to temperatures adequate to initiate matrix condensation, but still below the decomposition temperature of the porogen is demonstrated to produce nanoporous, ultralow dielectric constant thin films. Both closed and open cell porous structures were prepared simply by varying the porogen load in the organic/inorganic hybrid films. The porogen loads investigated in the present work ranged from 25-55 wt.%. Structural characterization of the samples conducted using transmission electron microscope (TEM), small angle X-ray scattering (SAXS) and Fourier transform infrared spectroscopy (FTIR) confirms the successful extraction of the porogen from the PMSSQ matrix at relatively low temperatures ({le} 200 C). The standard thermal decomposition process is performed at much higher temperatures (typically in the range of 400 C-450 C). The values of dielectric constants and refractive indices measured are in good agreement with the structural properties of these samples.

  2. Electrode/Dielectric Strip For High-Energy-Density Capacitor

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping S.

    1994-01-01

    Improved unitary electrode/dielectric strip serves as winding in high-energy-density capacitor in pulsed power supply. Offers combination of qualities essential for high energy density: high permittivity of dielectric layers, thinness, and high resistance to breakdown of dielectric at high electric fields. Capacitors with strip material not impregnated with liquid.

  3. A Conductivity and Dielectric Constant of Systems Near the Percolation Threshold.

    NASA Astrophysics Data System (ADS)

    Song, Yi.

    The ac conductivity and dielectric constant of macroscopically inhomogeneous systems near the percolation threshold vary as a power of the frequency, with (sigma) (PROPORTIONAL) (omega)('x), and (epsilon) (PROPORTIONAL) (omega)('-y). The two critical exponents x and y should satisfy a general scaling relation x + y = 1, if (sigma) and (epsilon) both obey scaling forms that have a single characteristic time scale. Two different percolation systems were studied experi- mentally in order to find the critical exponents x and y. The ac con- ductance and capacitance of these two systems were measured in the frequency range from 10 Hz to 13 MHz. The ac conductivity exponent x and ac dielectric constant exponent y from a three dimensional randomly mixed carbon-teflon system were found to be 0.86 (+OR-) 0.06 and 0.12 (+OR-) 0.04, respectively. The same critical exponents x and y were obtained on a planar chromium film system. Their values were x = 0.98 (+OR-) 0.09 and y = 0.08 (+OR-) 0.04. In order to complete the study, the dc conductivity exponent t and dc dielectric constant exponent s of these systems were also measured. They were in good agreement with well-established values. Two important mechanisms are responsible for the power law dependence of the ac conductivity and dielectric constant of systems near the percolation threshold. They are the interaction between percolation clusters and the fractal nature of these clus- ters. Two independent models based on these two mechanisms separately, namely the intercluster polarization (IP) model and the anomalous diffusion (AD) model, both predict power law behavior for (sigma) and (epsilon). The IP model predicts x (DBLTURN) 0.72 and y (DBLTURN) 0.28 for three dimensional (3D) systems and x = y = 0.5 for two dimensional (2D) systems; while the AD model predicts x (DBLTURN) 0.58 and y (DBLTURN) 0.42 for 3D systems and x (DBLTURN) 0.33 and y (DBLTURN) 0.67 for 2D systems. The experimental results of the ac conductivity

  4. Giant dielectric constant in TiO{sub 2}/Al{sub 2}O{sub 3} nanolaminates grown on doped silicon substrate by pulsed laser deposition

    SciTech Connect

    Walke, P.; Bouregba, R.; Mercey, B.; Lüders, U.; Lefevre, A.; Parat, G.; Lallemand, F.; Voiron, F.

    2014-03-07

    High quality amorphous nanolaminates by means of alternate Al{sub 2}O{sub 3} and TiO{sub 2} oxide sublayers were grown with atomic scale thickness control by pulsed laser deposition. A giant dielectric constant (>10 000), strongly enhanced compared to the value of either Al{sub 2}O{sub 3} or TiO{sub 2} or their solid solution, was observed. The dependence of the dielectric constant and the dielectric loss on the individual layer thickness of each of the constituting materials was investigated between 0.3 nm and 1 nm, in order to understand the prevailing mechanisms and allow for an optimization of the performances. An impedance study confirmed as the key source of the giant dielectric constant a Maxwell–Wagner type dielectric relaxation, caused by space charge polarization in the nanolaminate structure. The current work provides better insight of nanolaminates and their sublayer thickness engineering for potential applications.

  5. Quantum-dot size and thin-film dielectric constant: precision measurement and disparity with simple models.

    PubMed

    Grinolds, Darcy D W; Brown, Patrick R; Harris, Daniel K; Bulovic, Vladimir; Bawendi, Moungi G

    2015-01-14

    We study the dielectric constant of lead sulfide quantum dot (QD) films as a function of the volume fraction of QDs by varying the QD size and keeping the ligand constant. We create a reliable QD sizing curve using small-angle X-ray scattering (SAXS), thin-film SAXS to extract a pair-distribution function for QD spacing, and a stacked-capacitor geometry to measure the capacitance of the thin film. Our data support a reduced dielectric constant in nanoparticles. PMID:25531164

  6. New ceramic EPR resonators with high dielectric permittivity.

    PubMed

    Golovina, Iryna; Geifman, Ilia; Belous, Anatolii

    2008-11-01

    New EPR resonators were developed by using a ceramic material with a high dielectric constant, epsilon=160. The resonators have a high quality factor, Q=10(3), and enhance the sensitivity of an EPR spectrometer up to 170 times. Some advantages of the new ceramic resonators are: (1) cheaper synthesis and simplified fabricating technology; (2) wider temperature range; and (3) ease of use. The ceramic material is produced with a titanate of complex oxides of rare-earth and alkaline metals, and has a perovskite type structure. The resonators were tested with X-band EPR spectrometers with cylindrical (TE(011)) and rectangular (TE(102)) cavities at 300 and 77K. We discovered that EPR signal strength enhancement depends on the dielectric constant of the material, resonator geometry and the size of the sample. Also, an unusual resonant mode was found in the dielectric resonator-metallic cavity structure. In this mode, the directions of microwave magnetic fields of the coupled resonators are opposite and the resonant frequency of the structure is higher than the frequency of empty metallic cavity. PMID:18815061

  7. High k dielectric elastomeric materials for low voltage applications

    NASA Astrophysics Data System (ADS)

    Walder, C.; Molberg, M.; Opris, D. M.; Nüesch, F. A.; Löwe, C.; Plummer, C. J. G.; Leterrier, Y.; Månson, J.-A. E.

    2009-03-01

    In principle EAP technology could potentially replace common motion-generating mechanisms in positioning, valve control, pump and sensor applications, where designers are seeking quieter, power efficient devices to replace conventional electrical motors and drive trains. Their use as artificial muscles is of special interest due to their similar properties in terms of stress and strain, energy and power densities or efficiency. A broad application of dielectric elastomer actuators (DEA) is limited by the high voltage necessary to drive such devices. The development of novel elastomers offering better intrinsic electromechanical properties is one way to solve the problem. We prepared composites from cross-linked silicone elastomers or thermoplastic elastomers (TPE) by blending them with organic fillers exhibiting a high dielectric constant. Well characterized monomeric phthalocyanines and modified doped polyaniline (PANI) were used as filler materials. In addition, blends of TPE and an inorganic filler material PZT were characterized as well. We studied the influence of the filler materials onto the mechanical and electromechanical properties of the resulting mixtures. A hundredfold increase of the dielectric constant was already observed for blends of an olefin based thermoplastic elastomer and PANI.

  8. New ceramic EPR resonators with high dielectric permittivity

    NASA Astrophysics Data System (ADS)

    Golovina, Iryna; Geifman, Ilia; Belous, Anatolii

    2008-11-01

    New EPR resonators were developed by using a ceramic material with a high dielectric constant, ɛ = 160. The resonators have a high quality factor, Q = 10 3, and enhance the sensitivity of an EPR spectrometer up to 170 times. Some advantages of the new ceramic resonators are: (1) cheaper synthesis and simplified fabricating technology; (2) wider temperature range; and (3) ease of use. The ceramic material is produced with a titanate of complex oxides of rare-earth and alkaline metals, and has a perovskite type structure. The resonators were tested with X-band EPR spectrometers with cylindrical (TE 011) and rectangular (TE 102) cavities at 300 and 77 K. We discovered that EPR signal strength enhancement depends on the dielectric constant of the material, resonator geometry and the size of the sample. Also, an unusual resonant mode was found in the dielectric resonator-metallic cavity structure. In this mode, the directions of microwave magnetic fields of the coupled resonators are opposite and the resonant frequency of the structure is higher than the frequency of empty metallic cavity.

  9. Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle

    NASA Astrophysics Data System (ADS)

    Wang, Hua-Jie; Liu, Xue-Chao; Kong, Hai-Kuan; Xin, Jun; Gao, Pan; Shi, Er-Wei

    2016-07-01

    Porous AlN with low dielectric constant has been synthesized by the sacrificial template method based on the physical vapor transport principle. It is quite different from the traditional method that mixes the matrix with a pore-forming agent and utilizes liquid-phase sintering. The method consists of two parts. Firstly, AlN powder is placed in a graphite crucible. C/AlN composite can be formed by mixing decomposed AlN vapor and volatile carbon originated from a crucible at high temperature. Secondly, pores are formed after removing carbon from the C/AlN composite by an annealing process. The structure, morphology, porosity and properties of porous AlN are characterized. It is shown the obtained porous AlN has a thermal conductivity of 37.3 W/(m K) and a reduced dielectric constant of 5.5-6.1 (at 1 MHz). The porosity measured by a mercury porosimeter is 24.09%. It has been experimentally proved that porous AlN with a sufficiently porous structure and properties can be synthesized based on the vapor-phase principle.

  10. Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle

    NASA Astrophysics Data System (ADS)

    Wang, Hua-Jie; Liu, Xue-Chao; Kong, Hai-Kuan; Xin, Jun; Gao, Pan; Shi, Er-Wei

    2016-05-01

    Porous AlN with low dielectric constant has been synthesized by the sacrificial template method based on the physical vapor transport principle. It is quite different from the traditional method that mixes the matrix with a pore-forming agent and utilizes liquid-phase sintering. The method consists of two parts. Firstly, AlN powder is placed in a graphite crucible. C/AlN composite can be formed by mixing decomposed AlN vapor and volatile carbon originated from a crucible at high temperature. Secondly, pores are formed after removing carbon from the C/AlN composite by an annealing process. The structure, morphology, porosity and properties of porous AlN are characterized. It is shown the obtained porous AlN has a thermal conductivity of 37.3 W/(m K) and a reduced dielectric constant of 5.5-6.1 (at 1 MHz). The porosity measured by a mercury porosimeter is 24.09%. It has been experimentally proved that porous AlN with a sufficiently porous structure and properties can be synthesized based on the vapor-phase principle.

  11. Photoimageable Polyimide: A Dielectric Material For High Aspect Ratio Structures

    NASA Astrophysics Data System (ADS)

    Cech, Jay M.; Oprysko, Modest M.; Young, Peter L.; Li, Kin

    1986-07-01

    Polyimide has been identified as a useful material for microelectronic packaging because of its low dielectric constant and high temperature stability. Difficulties involved with reactive ion etching (RIE), a conventional technique for patterning thick polyimide films (thickness greater than 5 microns) with vertical walls, can be overcome by using photimageable polyimide precursors. The processing steps are similar to those used with negative photoresists. EM Chemical's HTR-3 photosensitive polyimide has been spun on up to a thickness of 12 microns. Exposure with a dose of 780 mJcm-2 of ultraviolet light, followed by spin development produces clean patterns as small as 5 microns corresponding to an aspect ratio of 2.4. When the patterned precursor is heated, an imidization reaction occurs converting the patterned film to polyimide. Baking to ca. 400 degrees C results in substantial loss in the thickness and in line width. However, shrinkage occurs reproducibly so useful rules for mask design can be formulated. Near vertical wall structures can be fabricated by taking advantage of the optical and shrinkage properties of the polyimide precursor. After development, an undercut wall profile can be produced since the bottom of the film receives less exposure and is hence more soluble in the developer. During heating, lateral shrinkage pulls the top of the film inward producing a vertical wall since the bottom is fixed to the substrate by adhesion. As a result, fully cured polyimide structures with straight walls and aspect ratios greater than one can be obtained. Dielectric properties of the fully imidized films were investigated with capacitor test structures. A relative dielectric constant of 3.3 and a loss tangent of .002 were measured at 20 kHz. It was also found that the dielectric constant increases as a linear function of relative humidity.

  12. Reduction of methylene green by EDTA: a relation between dielectric constant of medium and activated state.

    PubMed

    Qamar, Noshab; Azmat, Rafia; Naz, Raheela

    2013-01-01

    Kinetics of an alkaline reduction of the methylene green with ethylenediaminetetraaceticacid (EDTA) as a role of dielectric constant of the medium with anecdotal ionic strength in a diverse solvent system (aqueous mixtures of methanol) (10-30%) was studied by measuring the specific rate constant of the reaction spectrophotometrically at λ (max) = 660nm. An effort has been made to give an elucidation of vital role of dielectric constant of the medium captivating into reflection of single sphere and double sphere complex in reaction assortment. This investigation leads to disclose that single sphere complex of the dye and reductant was found to be the most suitable complex existed in a varied organic solvent. The deviation of the theoretical values from experimental results for single sphere and double sphere complex model in the presence of an alkali and nitrate ions were justified through HPLC analysis. HPLC analysis recommended that a considerable amount of the dye degrades in the existence of nitrate ion and alkali and additional peaks which may be of by-product were obtained. This leads to confirm the non identical values of single sphere and double sphere model in the occurrence of nitrate and an alkali. Rate of deletion of color showed a linear liaison with respect to water content below 30% and temperature between 20-40(o)C whereas an increase in the concentration of organic solvent showed the inhibition of dye decoloration at given optimum condition. Therefore study was restricted up to 30% of methanol binary mixtures. A mechanism of reduction of dye has been proposed based on verdict. PMID:23261728

  13. Spatially resolved dielectric constant of confined water and its connection to the non-local nature of bulk water.

    PubMed

    Schaaf, Christian; Gekle, Stephan

    2016-08-28

    We use molecular dynamics simulations to compute the spatially resolved static dielectric constant of water in cylindrical and spherical nanopores as occurring, e.g., in protein water pockets or carbon nanotubes. For this, we derive a linear-response formalism which correctly takes into account the dielectric boundary conditions in the considered geometries. We find that in cylindrical confinement, the axial component behaves similar as the local density akin to what is known near planar interfaces. The radial dielectric constant shows some oscillatory features when approaching the surface if their radius is larger than about 2 nm. Most importantly, however, the radial component exhibits pronounced oscillations at the center of the cavity. These surprising features are traced back quantitatively to the non-local dielectric nature of bulk water. PMID:27586940

  14. Photoinduced Electron Transfer Elicits a Change in the Static Dielectric Constant of a de Novo Designed Protein.

    PubMed

    Polizzi, Nicholas F; Eibling, Matthew J; Perez-Aguilar, Jose Manuel; Rawson, Jeff; Lanci, Christopher J; Fry, H Christopher; Beratan, David N; Saven, Jeffery G; Therien, Michael J

    2016-02-24

    We provide a direct measure of the change in effective dielectric constant (εS) within a protein matrix after a photoinduced electron transfer (ET) reaction. A linked donor-bridge-acceptor molecule, PZn-Ph-NDI, consisting of a (porphinato)Zn donor (PZn), a phenyl bridge (Ph), and a naphthalene diimide acceptor (NDI), is shown to be a "meter" to indicate protein dielectric environment. We calibrated PZn-Ph-NDI ET dynamics as a function of solvent dielectric, and computationally de novo designed a protein SCPZnI3 to bind PZn-Ph-NDI in its interior. Mapping the protein ET dynamics onto the calibrated ET catalogue shows that SCPZnI3 undergoes a switch in the effective dielectric constant following photoinduced ET, from εS ≈ 8 to εS ≈ 3. PMID:26840013

  15. High performance dielectric materials development

    NASA Technical Reports Server (NTRS)

    Piche, Joe; Kirchner, Ted; Jayaraj, K.

    1994-01-01

    The mission of polymer composites materials technology is to develop materials and processing technology to meet DoD and commercial needs. The following are outlined in this presentation: high performance capacitors, high temperature aerospace insulation, rationale for choosing Foster-Miller (the reporting industry), the approach to the development and evaluation of high temperature insulation materials, and the requirements/evaluation parameters. Supporting tables and diagrams are included.

  16. Simultaneous achievement of high dielectric constant and low temperature dependence of capacitance in (111)-oriented BaTiO3-Bi(Mg0.5Ti0.5)O3-BiFeO3 solid solution thin films

    NASA Astrophysics Data System (ADS)

    Kimura, Junichi; Chentir, Mohamed-Tahar; Shimizu, Takao; Uchida, Hiroshi; Funakubo, Hiroshi

    2016-01-01

    The temperature dependence of the capacitance of (111)c-oriented (0.90-x)BaTiO3-0.10Bi(Mg0.5Ti0.5)O3-xBiFeO3 solid solution films is investigated. These films are prepared on (111)cSrRuO3/(111)Pt/TiO2/SiO2/(100)Si substrates by the chemical solution deposition technique. All the films have perovskite structures and the crystal symmetry at room temperature varies with increasing x ratio, from pseudocubic when x = 0-0.30 to rhombohedral when x = 0.50-0.90. The pseudocubic phase shows a high relative dielectric constant (ɛr) (ranging between 400 and 560 at room temperature and an operating frequency of 100 kHz) and a low temperature dependence of capacitance up to 400°C, while maintaining a dielectric loss (tan δ) value of less than 0.2 at 100 kHz. In contrast, ɛr for the rhombohedral phase increases monotonically with increasing temperature up to 250°C, and increasingly high tan δ values are recorded at higher temperatures. These results indicate that pseudocubic (0.90-x)BaTiO3-0.10Bi(Mg0.5Ti0.5)O3-xBiFeO3 solid solution films with (111) orientation are suitable candidates for high-temperature capacitor applications.

  17. The change in dielectric constant, AC conductivity and optical band gaps of polymer electrolyte film: Gamma irradiation

    SciTech Connect

    Raghu, S. Subramanya, K. Sharanappa, C. Mini, V. Archana, K. Sanjeev, Ganesh Devendrappa, H.

    2014-04-24

    The effects of gamma (γ) irradiation on dielectric and optical properties of polymer electrolyte film were investigated. The dielectric constant and ac conductivity increases with γ dose. Also optical band gap decreased from 4.23 to 3.78ev after irradiation. A large dependence of the polymer properties on the irradiation dose was noticed. This suggests that there is a possibility of improving polymer electrolyte properties on gamma irradiation.

  18. Electronic structure, optical dielectric constant and born effective charge of EuAlO3

    NASA Astrophysics Data System (ADS)

    Sakhya, Anup Pradhan; Dutta, Alo; Shannigrahi, Santiranjan; Sinha, TP

    2016-01-01

    EuAlO3 (EAO) is synthesized by the sol-gel process. The Rietveld refinement of the X-ray diffraction data shows that the material has orthorhombic structure with Pbnm space group. The density functional theory calculations are initiated with the experimental lattice parameters. The full potential linearized augmented plane wave method and projector augmented wave method are used to investigate the ground state properties of EAO. An indirect band gap of 1.8 eV is observed with the valence band maximum at the Γ point and the conduction band minimum at the R point. The X-ray photoemission spectroscopy (XPS) spectra of EAO are obtained in the energy window of 0-1000 eV. Using the electronic density of states, the valence band (VB) spectrum of EAO is generated and compared with the observed VB-XPS spectrum. The optical dielectric constant and the refractive index of the material are calculated for the photon energy radiation. The optical properties show a considerable anisotropy in the material. The Born effective charge of various elements and the dielectric tensor of EAO have been calculated.

  19. Segmental Dynamics and Dielectric Constant of Polysiloxane Polar Copolymers as Plasticizers for Polymer Electrolytes.

    PubMed

    Choi, U Hyeok; Liang, Siwei; Chen, Quan; Runt, James; Colby, Ralph H

    2016-02-10

    Dielectric relaxation spectroscopy was used to investigate the segmental dynamics of a series of siloxane-based polar copolymers combining pendant cyclic carbonates and short poly(ethylene oxide) (PEO) chains. The homopolymer with cyclic carbonate as the only side chain exhibits higher glass transition temperature Tg and dielectric constant εs than the one with only PEO side chains. For their copolymers the observed Tg (agreeing well with the predicted values from the Fox equation) and εs decrease with increasing PEO side chain content. These polar polymers exhibit a glassy β relaxation with Arrhenius character, attributed to local chain motions of side groups attached to the main chain, and a segmental α relaxation, associated with the glass transition with a Vogel temperature dependence. As PEO side chain content increases, narrowing of the local glassy β relaxation was observed in the copolymers. The segmental α dynamics were observed to be faster, with an increase in breadth and decrease in strength with increasing PEO side chain content. Owing to the trade-off between Tg and εs, copolymers of intermediate composition result in the highest ionic conductivity when these copolymers are used to plasticize Li single-ion conducting ionomers. PMID:26735584

  20. Skeletal silica characterization in porous-silica low-dielectric-constant films by infrared spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Takada, Syozo; Hata, Nobuhiro; Seino, Yutaka; Fujii, Nobutoshi; Kikkawa, Takamaro

    2005-06-01

    Porous-silica low-dielectric-constant (low-k) films were prepared using a sol-gel method based on the self-assembly of surfactant templates. No change in the refractive index at 633 nm nor in the infrared-absorption intensities of C-H and O-H stretching vibrations at around 2900 and 3400cm-1 of porous-silica low-k films were observed after annealing at each temperature from 523 to 723 K. On the other hand, the Young's elastic modulus and hardness increased with the increase of annealing temperature. The structure in the complex dielectric function of porous-silica low-k films observed in between 1000 and 1400cm-1 is assigned as the asymmetric stretching vibration mode of the Si-O-Si bond. By applying the effective-medium theory by Bruggeman to the experimental results from infrared spectroscopic ellipsometry, we analyzed the skeletal silica structures. The peak positions of transverse (ωTO) and longitudinal (ωLO) vibration modes for Si-O-Si network in the silica skeleton of porous-silica films changed from 1061 to 1068cm-1 and from 1219 to 1232cm-1, respectively, with the annealing temperature. It is shown that the ωLO2/ωTO2 of skeletal silica correlates with Young's elastic modulus of porous-silica low-k films.

  1. Experimental study of the complex resistivity and dielectric constant of chrome-contaminated soil

    NASA Astrophysics Data System (ADS)

    Liu, Haorui; Yang, Heli; Yi, Fengyan

    2016-08-01

    Heavy metals such as arsenic and chromium often contaminate soils near industrialized areas. Soil samples, made with different water content and chromate pollutant concentrations, are often needed to test soil quality. Because complex resistivity and complex dielectric characteristics of these samples need to be measured, the relationship between these measurement results and chromium concentration as well as water content was studied. Based on soil sample observations, the amplitude of the sample complex resistivity decreased with an increase of contamination concentration and water content. The phase of complex resistivity takes on a tendency of initially decrease, and then increase with the increasing of contamination concentration and water content. For a soil sample with the same resistivity, the higher the amplitude of complex resistivity, the lower the water content and the higher the contamination concentration. The real and imaginary parts of the complex dielectric constant increase with an increase in contamination concentration and water content. Note that resistivity and complex resistivity methods are necessary to adequately evaluate pollution at various sites.

  2. A Simple Method for Estimation of Dielectric Constants and Polarizabilities of Nonpolar and Slightly Polar Hydrocarbons

    NASA Astrophysics Data System (ADS)

    Panuganti, Sai R.; Wang, Fei; Chapman, Walter G.; Vargas, Francisco M.

    2016-07-01

    Many of the liquids that are used as electrical insulators are nonpolar or slightly polar petroleum-derived hydrocarbons, such as the ones used for cable and/or transformer oils. In this work, semi-empirical expressions with no adjustable parameters for the dielectric constant and the polarizability of nonpolar and slightly polar hydrocarbons and their mixtures are proposed and validated. The expressions that were derived using the Vargas-Chapman One-Third rule require the mass density and the molecular weight of the substance of interest. The equations were successfully tested for various hydrocarbons and polymers with dipole moments <0.23 and densities from 500 to 1200 kg\\cdot hbox {m}^{-3}. The predictions are in good agreement with the experimental data in a wide range of temperatures and pressures. The proposed expressions eliminate the need of extensive experimental data and require less input parameters compared to existing correlations.

  3. A simple method for reducing inevitable dielectric loss in high-permittivity dielectric elastomers

    NASA Astrophysics Data System (ADS)

    Madsen, F. B.; Yu, L.; Mazurek, P.; Skov, A. L.

    2016-07-01

    Commercial viability of dielectric elastomers (DEs) is currently limited by a few obstacles, including high driving voltages (in the kV range). Driving voltage can be lowered by either decreasing the Young’s modulus or increasing the dielectric permittivity of silicone elastomers, or a combination thereof. A decrease in the Young’s modulus, however, is often accompanied by a loss in mechanical stability, whereas increases in dielectric permittivity are usually followed by a large increase in dielectric loss followed by a decrease in breakdown strength and thereby the lifetime of the DE. A new soft elastomer matrix, with high dielectric permittivity and a low Young’s modulus, aligned with no loss of mechanical stability, was prepared through the use of commercially available chloropropyl-functional silicone oil mixed into a tough commercial liquid silicone rubber silicone elastomer. The addition of chloropropyl-functional silicone oil in concentrations up to 30 phr was found to improve the properties of the silicone elastomer significantly, as dielectric permittivity increased to 4.4, dielectric breakdown increased up to 25% and dielectric losses were reduced. The chloropropyl-functional silicone oil also decreased the dielectric losses of an elastomer containing dielectric permittivity-enhancing TiO2 fillers. Commercially available chloropropyl-functional silicone oil thus constitutes a facile method for improved silicone DEs, with very low dielectric losses.

  4. Dielectric function and magneto-optical Voigt constant of Cu2O: A combined spectroscopic ellipsometry and polar magneto-optical Kerr spectroscopy study

    NASA Astrophysics Data System (ADS)

    Haidu, Francisc; Fronk, Michael; Gordan, Ovidiu D.; Scarlat, Camelia; Salvan, Georgeta; Zahn, Dietrich R. T.

    2011-11-01

    Cuprous oxide is a highly interesting material for the emerging field of transparent oxide electronics. In this work the energy dispersion of the dielectric function of Cu2O bulk material is revised by spectroscopic ellipsometry measurements in an extended spectral range from 0.73 to 10 eV. For the first time, the magneto-optical Kerr effect was measured in the spectral range from 1.7 to 5.5 eV and the magneto-optical Voigt constant of Cu2O was obtained by numerical calculations from the magneto-optical Kerr effect spectra and the dielectric function.

  5. Critical behaviors of the conductivity and dielectric constant of Ti3SiC2/Al2O3 hybrids

    NASA Astrophysics Data System (ADS)

    Wu, Rui-Fen; Pan, Wei; Shi, Sui-Lin; Han, Ruo-Bing

    2007-09-01

    Ti3SiC2/Al2O3 hybrids were prepared by a spark plasma sintering process. The effective dc conductivity of the hybrids was measured at room temperature, which agrees with the percolation theory and follows the power law around the percolation threshold. The ac conductivity and dielectric constants of the hybrids were also characterized and follow the power law when the concentration of the conductive phase is close to the percolation threshold; meanwhile, the dielectric constant could increase over three orders of magnitude compared with Al2O3.

  6. Ferroelectric polymer networks with high energy density and improved discharged efficiency for dielectric energy storage.

    PubMed

    Khanchaitit, Paisan; Han, Kuo; Gadinski, Matthew R; Li, Qi; Wang, Qing

    2013-01-01

    Ferroelectric polymers are being actively explored as dielectric materials for electrical energy storage applications. However, their high dielectric constants and outstanding energy densities are accompanied by large dielectric loss due to ferroelectric hysteresis and electrical conduction, resulting in poor charge-discharge efficiencies under high electric fields. To address this long-standing problem, here we report the ferroelectric polymer networks exhibiting significantly reduced dielectric loss, superior polarization and greatly improved breakdown strength and reliability, while maintaining their fast discharge capability at a rate of microseconds. These concurrent improvements lead to unprecedented charge-discharge efficiencies and large values of the discharged energy density and also enable the operation of the ferroelectric polymers at elevated temperatures, which clearly outperforms the melt-extruded ferroelectric polymer films that represents the state of the art in dielectric polymers. The simplicity and scalability of the described method further suggest their potential for high energy density capacitors. PMID:24276519

  7. Reactions for yttrium silicate high-k dielectrics

    NASA Astrophysics Data System (ADS)

    Chambers, James Joseph

    The continued scaling of metal-oxide-semiconductor-field-effect-transistors (MOSFETs) will require replacing the silicon dioxide gate dielectric with an alternate high dielectric constant (high-k) material. We have exploited the high reactivity of yttrium with both silicon and oxygen to form yttrium silicate high-k dielectrics. Yttrium silicate films with composition of (Y 2O3)x ·(SiO2)1-x and x = 0.32 to 0.87 are formed by oxidizing yttrium on silicon where yttrium reacts concurrently with silicon and oxygen. The competition between silicon and oxygen for yttrium is studied using X-ray photoelectron spectroscopy (XPS) and medium energy ion scattering (MEIS). The initial yttrium thickness mediates the silicon consumption, and a critical thickness (˜40--80 A) exists below which silicon is consumed to form yttrium silicate and above which Y2O3 forms without silicon incorporation. Engineered interfaces modify the silicon consumption, and a nitrided silicon interface results in film with composition close to Y2O3. The silicon consumption also depends on the oxidation temperature, and oxidation at higher temperature generally results in greater silicon incorporation with an activation energy of 0.3--0.5 eV. Yttrium silicate films (˜40 A) formed by oxidation of yttrium on silicon have an amorphous microstructure and an equivalent silicon dioxide thickness of ˜12 A with leakage current <1 A/cm2. Yttrium silicate formation on silicon is also demonstrated using plasma oxidation of yttrium on silicon, reactive sputtering of yttrium and annealing/oxidation of yttrium on thermal SiO 2. The interface reactions described here for yttrium are expected to be active during both physical and chemical vapor deposition of other high-k dielectrics containing Hf, Zr and La.

  8. Polaron-electron assisted giant dielectric dispersion in SrZrO3 high-k dielectric

    NASA Astrophysics Data System (ADS)

    Borkar, Hitesh; Barvat, Arun; Pal, Prabir; Shukla, A. K.; Pulikkotil, J. J.; Kumar, Ashok

    2016-06-01

    The SrZrO3 is a well known high-k dielectric constant (˜22) and high optical bandgap (˜5.8 eV) material and one of the potential candidates for future generation nanoelectronic logic elements (8 nm node technology) beyond silicon. Its dielectric behavior is fairly robust and frequency independent till 470 K; however, it suffers a strong small-polaron based electronic phase transition (Te) linking 650 to 750 K. The impedance spectroscopy measurements revealed the presence of conducting grains and grain boundaries at elevated temperature which provide energetic mobile charge carriers with activation energy in the range of 0.7 to 1.2 eV supporting the oxygen ions and proton conduction. X-ray photoemission spectroscopy measurements suggest the presence of weak non-stoichiometric O2- anions and hydroxyl species bound to different sites at the surface and bulk. These thermally activated charge carriers at elevated temperature significantly contribute to the polaronic based dielectric anomaly and conductivity. Our dielectric anomaly supports pseudo phase transition due to high degree of change in ZrO6 octahedral angle in the temperature range of 650-750 K, where electron density and phonon vibration affect the dielectric and conductivity properties.

  9. Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure

    SciTech Connect

    Coh, Sinisa; Heeg, Tassilo; Haeni, Jeffery; Biegalski, Michael D; Letteri, James; Bernhagen, M; Reiche, Paul; O'brien, Kevin; Uecker, Rinhold; Trolier-McKinstry, Susan; Schlom, Darrell; Vanderbilt, David

    2010-01-01

    We analyze both experimentally (where possible) and theoretically from first-principles the dielectric tensor components and crystal structure of five classes of Pbnm perovskites. All of these materials are believed to be stable on silicon and are therefore promising candidates for high-K dielectrics. We also analyze the structure of these materials with various simple models, decompose the lattice contribution to the dielectric tensor into force constant matrix eigenmode contributions, explore a peculiar correlation between structural and dielectric anisotropies in these compounds and give phonon frequencies and infrared activities of those modes that are infrared-active. We find that CaZrO3, SrZrO3, LaHoO3, and LaYO3 are among the most promising candidates for high-K dielectrics among the compounds we considered.

  10. Graphene oxide-encapsulated carbon nanotube hybrids for high dielectric performance nanocomposites with enhanced energy storage density

    NASA Astrophysics Data System (ADS)

    Wu, Chao; Huang, Xingyi; Wu, Xinfeng; Xie, Liyuan; Yang, Ke; Jiang, Pingkai

    2013-04-01

    Polymer-based materials with a high dielectric constant show great potential for energy storage applications. Since the intrinsic dielectric constant of most polymers is very low, the integration of carbon nanotubes (CNTs) into the polymers provides an attractive and promising way to reach a high dielectric constant owing to their outstanding intrinsic physical performances. However, these CNT-based composites usually suffer from high dielectric loss, low breakdown strength and the difficulty to tailor the dielectric constant. Herein, we have designed and fabricated a new class of candidates composed of graphene oxide-encapsulated carbon nanotube (GO-e-CNT) hybrids. The obtained GO-e-CNT-polymer composites not only exhibit a high dielectric constant and low dielectric loss, but also have a highly enhanced breakdown strength and maximum energy storage density. Moreover, the dielectric constant of the composites can be tuned easily by tailoring the loading of GO-e-CNTs. It is believed that the GO shells around CNTs play an important role in realizing the high dielectric performances of the composites. GO shells can not only effectively improve the dispersion of CNTs, but also act as insulation barriers for suppressing leakage current and increasing breakdown strength. Our strategy provides a new pathway to achieve CNT-based polymer composites with high dielectric performances for energy storage applications.Polymer-based materials with a high dielectric constant show great potential for energy storage applications. Since the intrinsic dielectric constant of most polymers is very low, the integration of carbon nanotubes (CNTs) into the polymers provides an attractive and promising way to reach a high dielectric constant owing to their outstanding intrinsic physical performances. However, these CNT-based composites usually suffer from high dielectric loss, low breakdown strength and the difficulty to tailor the dielectric constant. Herein, we have designed and

  11. Effect of organic flux on the colossal dielectric constant of CaCu3Ti4O12 (CCTO)

    NASA Astrophysics Data System (ADS)

    Razdan, Vishnu; Singh, Abhishek; Arnold, Brad; Choa, Fow-Sen; Kelly, Lisa; Singh, N. B.

    2015-05-01

    We have used low temperature organics to achieve orientation of the grains of Ca2/3Cu3Ti4O12 (CCTO) compound to increase the resistivity. During the past fifteen years CCTO has been studied extensively for its performance as a dielectric capacitor. We have synthesized and grown large grains of pure Ca2/3Cu3Ti4O12 and doped compound, and studied the dielectric constant and resistivity. The grains were aligned by using a naphthalene-camphor eutectic. CCTO was mixed in the organic melt and oriented by the directional solidification method. This material has different characteristics than pure processed CCTO material. The effect of solidification conditions and its effect on the morphology and the dielectric constant, resistivity and loss tan delta of pure and doped CCTO are described in this article.

  12. Dynamics of a caged imidazolium cation-toward understanding the order-disorder phase transition and the switchable dielectric constant.

    PubMed

    Zhang, Xi; Shao, Xiu-Dan; Li, Si-Chao; Cai, Ying; Yao, Ye-Feng; Xiong, Ren-Gen; Zhang, Wen

    2015-03-18

    A molecular compass-like behaviour is found in a perovskite-type cage compound (HIm)2[KCo(CN)6] (HIm = imidazolium cation). The dynamic changes in the HIm cation from the static to rotating state along with the rearrangement of the host cage result in switchable and anisotropic dielectric constants. PMID:25579450

  13. Polyaniline coated cellulose fiber / polyvinyl alcohol composites with high dielectric permittivity and low percolation threshold

    NASA Astrophysics Data System (ADS)

    Anju, V. P.; Narayanankutty, Sunil K.

    2016-01-01

    Cost effective, high performance dielectric composites based on polyvinyl alcohol, cellulose fibers and polyaniline were prepared and the dielectric properties were studied as a function of fiber content, fiber dimensions and polyaniline content over a frequency range of 40 Hz to 30 MHz. The short cellulose fibers were size-reduced to micro and nano levels prior to coating with polyaniline. Fiber surface was coated with Polyaniline (PANI) by an in situ polymerization technique in aqueous medium. The composites were then prepared by solution casting method. Short cellulose fiber composites showed a dielectric constant (DEC) of 2.3 x 105 at 40 Hz. For the micro- and nano- cellulose fiber composites the DEC was increased to 4.5 x 105 and 1.3 x 108, respectively. To gain insight into the inflection point of the dielectric data polynomial regression analysis was carried out. The loss tangent of all the composites remained at less than 1.5. Further, AC conductivity, real and imaginary electric moduli of all the composites were evaluated. PVA nanocomposite attained an AC conductivity of 3 S/m. These showed that by controlling the size of the fiber used, it was possible to tune the permittivity and dielectric loss to desired values over a wide range. These novel nanocomposites, combining high dielectric constant and low dielectric loss, can be effectively used in applications such as high-charge storage capacitors.

  14. Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials

    NASA Astrophysics Data System (ADS)

    Zhang, Shengke

    Microwave properties of low-loss commercial dielectric materials are optimized by adding transition-metal dopants or alloying agents (i.e. Ni, Co, Mn) to tune the temperature coefficient of resonant frequency (tau f) to zero. This occurs as a result of the temperature dependence of dielectric constant offsetting the thermal expansion. At cryogenic temperatures, the microwave loss in these dielectric materials is dominated by electron paramagnetic resonance (EPR) loss, which results from the spin-excitations of d-shell electron spins in exchange-coupled clusters. We show that the origin of the observed magnetically-induced shifts in the dielectric resonator frequency originates from the same mechanism, as described by the Kramers-Kronig relations. The temperature coefficient of resonator frequency, tauf, is related to three material parameters according to the equation, tau f = - (½ tauepsilon + ½ taumu + alphaL), where tauepsilon, taumu , and alphaL are the temperature coefficient of dielectric constant, magnetic permeability, and lattice constant, respectively. Each of these parameters for dielectric materials of interest are measured experimentally. These results, in combination with density functional simulations, developed a much improved understanding of the fundamental mechanisms responsible for tau f. The same experimental methods have been used to characterize in-situ the physical nature and concentration of performance-degrading point defects in the dielectrics of superconducting planar microwave resonators.

  15. Enhanced performance in capacitive force sensors using carbon nanotube/polydimethylsiloxane nanocomposites with high dielectric properties.

    PubMed

    Jang, Hyeyoung; Yoon, Hyungsuk; Ko, Youngpyo; Choi, Jaeyoo; Lee, Sang-Soo; Jeon, Insu; Kim, Jong-Ho; Kim, Heesuk

    2016-03-14

    Force sensors have attracted tremendous attention owing to their applications in various fields such as touch screens, robots, smart scales, and wearable devices. The force sensors reported so far have been mainly focused on high sensitivity based on delicate microstructured materials, resulting in low reproducibility and high fabrication cost that are limitations for wide applications. As an alternative, we demonstrate a novel capacitive-type force sensor with enhanced performance owing to the increased dielectric properties of elastomers and simple sensor structure. We rationally design dielectric elastomers based on alkylamine modified-multi-walled carbon nanotube (MWCNT)/polydimethylsiloxane (PDMS) composites, which have a higher dielectric constant than pure PDMS. The alkylamine-MWCNTs show excellent dispersion in a PDMS matrix, thus leading to enhanced and reliable dielectric properties of the composites. A force sensor array fabricated with alkylamine-MWCNT/PDMS composites presents an enhanced response due to the higher dielectric constant of the composites than that of pure PDMS. This study is the first to report enhanced performance of capacitive force sensors by modulating the dielectric properties of elastomers. We believe that the disclosed strategy to improve the sensor performance by increasing the dielectric properties of elastomers has great potential in the development of capacitive force sensor arrays that respond to various input forces. PMID:26899884

  16. Dielectric constants of binary mixtures of propylene carbonate with dimethyl carbonate and ethylene carbonate from molecular dynamics simulation: comparison between non-polarizable and polarizable force fields

    NASA Astrophysics Data System (ADS)

    Lee, Sanghun; Park, Sung Soo

    2013-01-01

    Using non-polarizable and polarizable molecular dynamics simulations, binary mixtures of propylene carbonate + dimethyl carbonate and propylene carbonate + ethylene carbonate with various compositions were investigated. The polarizable model produces more reasonable estimation of dielectric constants than the non-polarizable model; however, combining the electronic continuum model with the non-polarizable MD improves the comparison between the two models. Fair agreement was found between the results from these simulations and available experimental data. In addition, for a better understanding of the mixing behaviour, the excess dielectric constants over the entire composition were calculated. By comparison of the two mixtures in various mole fractions, distinctive mixing behaviours of propylene carbonate + dimethyl carbonate (poorly symmetric mixture) and propylene carbonate + ethylene carbonate (highly symmetric mixture) were observed.

  17. Silicon Dioxide Film with Low Dielectric Constants using Liquid-Phase Deposition

    NASA Astrophysics Data System (ADS)

    Chanthamaly, Phonekeo; Arakawa, Taro; Haneji, Nobuo

    1999-10-01

    We propose a method which is advantageous for forming F bonds in the Si O network without any external energy assistance. This method can be used to grow SiO2 films in supersaturated fluorosilicic acid (H2SiF6) at room temperature. The dissociation reaction between H2SiF6 and H2O leads to the formation of silica and the deposition of SiO2 films on the surface of substrates. Because the reaction involves an aqueous acid which contains fluorine, F bonds are formed in the films naturally. The percentage of F atoms increased from 3.5 to 4.75% according to X-ray photoelectron sectroscopy (XPS) survey, and the F1S peak changed from 687.72 to 687.18 eV with an increase in concentration from 2.25 to 3.25 mol/l, respectively. In addition, due to the effect of F bonds inside the film, the dielectric constant also decreased from 3.7 to about 3. Atomic force microscopy (AFM) images showed that the surface roughness increased with increasing H2SiF6 concentration due to the attack of F; however, the maximum surface roghness was less than 0.5 nm.

  18. Damage by radicals and photons during plasma cleaning of porous low-k SiOCH. II. Water uptake and change in dielectric constant

    SciTech Connect

    Shoeb, Juline; Kushner, Mark J.

    2012-07-15

    Porous dielectric materials provide lower capacitances that reduce RC time delays in integrated circuits. Typical low-k materials include porous SiOCH-silicon dioxide with carbon groups, principally CH{sub 3}, lining the pores. With a high porosity, internally connected pores provide pathways for reactive species to enter into the material. Fluorocarbon plasmas are often used to etch SiOCH, a process that leaves a fluorocarbon polymer on the surface that must later be removed. During cleaning using Ar/O{sub 2} or He/H{sub 2} plasmas, reactions of radicals that diffuse into the SiOCH and photons that penetrate into the SiOCH can remove -CH{sub 3} groups. Due to its higher reactivity, cleaning with Ar/O{sub 2} plasmas removes more -CH{sub 3} groups than He/H{sub 2} plasmas, and so produce more free radical sites, such as -SiO{sub 2} Bullet (a -SiO{sub 2}-CH{sub 3} site with the -CH{sub 3} group removed).Upon exposure to humid air, these free radical sites can chemisorb H{sub 2}O to form hydrophilic Si-OH which can further physisorb H{sub 2}O through hydrogen bonding to form Si-OH(H{sub 2}O). With the high dielectric constant of water, even a small percentage of water uptake can significantly increase the effective dielectric constant of SiOCH. In this paper, we report on results from a computational investigation of the cleaning of SiOCH using Ar/O{sub 2} or He/H{sub 2} plasmas and subsequent exposure to humid air. The authors found that plasma cleaning with He/H{sub 2} mixtures produce less demethylation than cleaning with Ar/O{sub 2} plasmas, as so results in less water uptake, and a smaller increase in dielectric constant. The water that produces the increase in dielectric constant is roughly half chemisorbed and half physisorbed, the latter of which can be removed with mild heating. Sealing the pores with NH{sub 3} plasma treatment reduces water uptake and helps prevent the increase in dielectric constant.

  19. Dielectric nanocomposites for high performance embedded capacitors in organic printed circuit boards

    NASA Astrophysics Data System (ADS)

    Xu, Jianwen

    Conventionally discrete passive components like capacitors, resistors, and inductors are surface-mounted on top of the printed circuit boards (PCBs). To match the ever increasing demands of miniaturization, cost reduction, and high performance in microelectronic industry, a promising approach is to integrate passive components into the board during PCB manufacture. Because they are embedded inside multilayer PCBs, such components are called embedded passives. This work focuses on the materials design, development and processing of polymer-based dielectric nanocomposites for embedded capacitor applications. The methodology of this approach is to combine the advantages of the polymer and the filler to satisfy the electric, dielectric, mechanical, fabrication, and reliability requirements for embedded capacitors. Restrained by poor adhesion and poor thermal stress reliability at high filler loadings, currently polymer-ceramic composites can only achieve a dielectric constant of less than 50. In order to increase the dielectric constant to above 50, effects of high-kappa polymer matrix, bimodal fillers, and dispersing agent are systematically investigated. Surface functionalization of nanofiller particles and modification of epoxy matrix with a secondary rubberized epoxy to form sea-island structure are proposed to enhance the dielectric constant, adhesion and high-temperature thermal stress reliability of high-kappa composites. To obtain photodefinable high-kappa composites, fundamental understanding of the photopolymerization of the novel epoxy-ceramic composite photoresist is addressed. While the properties of high-kappa composites largely depend on the polymer matrix, the fillers can also drastically affect the material properties. Carbon black- and carbon nanotubes-filled ultrahigh-kappa polymer composites are investigated as the candidate materials for embedded capacitors. Dielectric composites based on percolation typically show a high dielectric constant, and a

  20. Preparation and microwave characterization of BaNd{sub 2-x}Sm{sub x}Ti{sub 4}O{sub 12} (0 {<=} x {<=} 2) ceramics and their effect on the temperature coefficient of dielectric constant in polytetrafluoroethylene composites

    SciTech Connect

    Stanly Jacob, K.; Satheesh, R.; Ratheesh, R.

    2009-10-15

    High dielectric and temperature-stable ceramic compositions have been prepared through solid-state ceramic route. The structure and microstructure of the ceramics have been studied using powder X-ray diffraction and scanning electron microscopic techniques. The dielectric properties of well-sintered ceramics are studied in the microwave frequency region using Hakki and Coleman post-resonator technique. The samples exhibited high dielectric constant (>77), relatively high quality factor (>1500) and near zero temperature coefficient of resonant frequency. Phase pure calcined ceramic materials are incorporated in the polytetrafluoroethylene matrix through a proprietary process comprising of sigma mixing, extrusion, calendering followed by hot pressing for the fabrication of planar circuit laminates. The effect of temperature coefficient of dielectric constant of the resultant polytetrafluoroethylene/ceramic composite materials is studied with respect to compositional variation of the filler materials.

  1. Dielectric Performance of a High Purity HTCC Alumina at High Temperatures - a Comparison Study with Other Polycrystalline Alumina

    NASA Technical Reports Server (NTRS)

    Chen, Liangyu

    2014-01-01

    A very high purity (99.99+%) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this alumina material for co-firing processing. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96% polycrystalline alumina (96% Al2O3), where 96% alumina was used as the benchmark. A prototype packaging system based on regular 96% alumina with Au thickfilm metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500 C. In order to evaluate this new high purity HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96% alumina and a previously tested LTCC alumina from room temperature to 550 C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96% alumina and a selected LTCC alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.

  2. High-frequency dielectric behaviour of erbium substituted Ni-Zn ferrites

    NASA Astrophysics Data System (ADS)

    Kumar, K. Vijaya; Reddy, A. Chandra Shekhar; Ravinder, D.

    2003-07-01

    Dielectric properties such as dielectric constant ( ɛ') and dielectric loss tangent (tan δ) of mixed Ni-Zn-Er ferrites have been measured at room temperature in the frequency range 1-13 MHz using a HP 4192A impedance analyser. Plots of dielectric constant ( ɛ') versus frequency show a normal dielectric behaviour of spinel ferrites. The frequency dependence of dielectric loss tangent (tan δ) is found to be abnormal, giving a peak at certain frequency for all mixed Ni-Zn-Er ferrites. A qualitative explanation is given for the composition and frequency dependence of the dielectric constant and dielectric loss tangent. Plot of dielectric constant versus temperature has shown a transition near the Curie temperature for all the samples of Ni-Zn-Er ferrites. On the basis of these results an explanation for the dielectric mechanism in Ni-Zn-Er ferrites is suggested.

  3. Critical interparticle distance for the remarkably enhanced dielectric constant of BaTiO3-Ag hybrids filled polyvinylidene fluoride composites

    NASA Astrophysics Data System (ADS)

    Luo, Suibin; Yu, Shuhui; Fang, Fang; Lai, Maobai; Sun, Rong; Wong, Ching-Ping

    2014-06-01

    Discrete nano Ag-deposited BaTiO3 (BT-Ag) hybrids with varied Ag content were synthesized, and the hybrids filled polyvinylidene fluoride (PVDF) composites were prepared. The effect of Ag content on the dielectric properties of the composites were analyzed based on the diffused electrical double layer theory. Results showed that with a higher Ag content in BT-Ag hybrids, the dielectric constant of BT-Ag/PVDF composites increases fast with the filler loading, while the dielectric loss and conductivity showed a suppressed and moderate increase. The dielectric constant of BT-0.61Ag/PVDF (61 wt. % of Ag in BT-Ag hybrid) composites reached 613, with the dielectric loss of 0.29 at 1 kHz. It was deduced that remarkably enhanced dielectric constant appeared when the interparticle distance decreased to a critical value of about 20 nm.

  4. Dielectric Performance of High Purity HTCC Alumina at High Temperatures - A Comparison Study with Other Polycrystalline Alumina

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu

    2012-01-01

    A very high purity (99.99+) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this co-fired material. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96 polycrystalline alumina (96 Al2O3), where 96 alumina was used as the benchmark. A prototype packaging system based on regular 96 alumina with Au thick-film metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500C. In order to evaluate this new HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96 alumina and a LTCC alumina from room temperature to 550C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96 alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.

  5. High voltage compliance constant current ballast

    NASA Technical Reports Server (NTRS)

    Rosenthal, L. A.

    1976-01-01

    A ballast circuit employing a constant current diode and a vacuum tube that can provide a constant current over a voltage range of 1000 volts. The simple circuit can prove useful in studying voltage breakdown characteristics.

  6. Dielectric Constant Modelling with Soil–Air Composition and Its Effect on Sar Radar Signal Backscattered over Soil Surface

    PubMed Central

    Zribi, Mehrez; Le Morvan, Aurélie; Baghdadi, Nicolas

    2008-01-01

    The objective of this paper is to present the contribution of a new dielectric constant characterisation for the modelling of radar backscattering behaviour. Our analysis is based on a large number of radar measurements acquired during different experimental campaigns (Orgeval'94, Pays de Caux'98, 99). We propose a dielectric constant model, based on the combination of contributions from both soil and air fractions. This modelling clearly reveals the joint influence of the air and soil phases, in backscattering measurements over rough surfaces with large clods. A relationship is established between the soil fraction and soil roughness, using the Integral Equation Model (IEM), fitted to real radar data. Finally, the influence of the air fraction on the linear relationship between moisture and the backscattered radar signal is discussed.

  7. Dielectric property measurement of zirconia fibers at high temperature

    SciTech Connect

    Vogt, G.J.; Tinga, W.R.; Plovnick, R.H.

    1995-12-31

    Using a self-heating, electronically tunable microwave dielectrometer, the complex dielectric constant of zirconia-based filaments was measured at 915 MHz from 350{degrees} to 1100{degrees}C. When exposed to a low temperature environment, this fibrous material cools rapidly within several seconds due to a large surface area to volume ratio. Such rapid sample cooling necessitates the use of a self-heating technique to measure the complex dielectric constant at temperatures up to 1100{degrees}C. Sample temperature was measured with optical fiber thermometry. The effect of sample temperature measurement on data accuracy is discussed.

  8. Dielectric constant and low-frequency infrared spectra for liquid water and ice Ih within the E3B model

    SciTech Connect

    Shi, L.; Ni, Y.; Drews, S. E. P.; Skinner, J. L.

    2014-08-28

    Two intrinsic difficulties in modeling condensed-phase water with conventional rigid non-polarizable water models are: reproducing the static dielectric constants for liquid water and ice Ih, and generating the peak at about 200 cm{sup −1} in the low-frequency infrared spectrum for liquid water. The primary physical reason for these failures is believed to be the missing polarization effect in these models, and consequently various sophisticated polarizable water models have been developed. However, in this work we pursue a different strategy and propose a simple empirical scheme to include the polarization effect only on the dipole surface (without modifying a model's intermolecular interaction potential). We implement this strategy for our explicit three-body (E3B) model. Our calculated static dielectric constants and low-frequency infrared spectra are in good agreement with experiment for both liquid water and ice Ih over wide temperature ranges, albeit with one fitting parameter for each phase. The success of our modeling also suggests that thermal fluctuations about local minima and the energy differences between different proton-disordered configurations play minor roles in the static dielectric constant of ice Ih. Our analysis shows that the polarization effect is important in resolving the two difficulties mentioned above and sheds some light on the origin of several features in the low-frequency infrared spectra for liquid water and ice Ih.

  9. Using DelPhi capabilities to mimic protein’s conformational reorganization with amino acid specific dielectric constants

    PubMed Central

    Wang, Lin; Zhang, Zhe; Rocchia, Walter; Alexov, Emil

    2011-01-01

    Many molecular events are associated with small or large conformational changes occurring in the corresponding proteins. Modeling such changes is a challenge and requires significant amount of computing time. From point of view of electrostatics, these changes can be viewed as a reorganization of local charges and dipoles in response to the changes of the electrostatic field, if the cause is insertion or deletion of a charged amino acid. Here we report a large scale investigation of modeling the changes of the folding energy due to single mutations involving charged group. This allows the changes of the folding energy to be considered mostly electrostatics in origin and to be calculated with DelPhi assigning residue-specific value of the internal dielectric constant of protein. The predicted energy changes are benchmarked against experimentally measured changes of the folding energy on a set of 257 single mutations. The best fit between experimental values and predicted changes is used to find out the effective value of the internal dielectric constant for each type of amino acid. The predicted folding free energy changes with the optimal, amino acid specific, dielectric constants are within RMSD=0.86 kcal/mol from experimentally measured changes. PMID:24683422

  10. A high-k ferroelectric relaxor terpolymer as a gate dielectric for orgnaic thin film transistors

    SciTech Connect

    Wu, Shan; Shao, Ming; Burlingame, Quinn; Chen, Xiangzhong; Lin, Minren; Xiao, Kai; Zhang, Qiming

    2013-01-01

    Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE- CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/ off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained

  11. Recent Results on the Accurate Measurements of the Dielectric Constant of Seawater at 1.413GHZ

    NASA Technical Reports Server (NTRS)

    Lang, R.H.; Tarkocin, Y.; Utku, C.; Le Vine, D.M.

    2008-01-01

    Measurements of the complex. dielectric constant of seawater at 30.00 psu, 35.00 psu and 38.27 psu over the temperature range from 5 C to 3 5 at 1.413 GHz are given and compared with the Klein-Swift results. A resonant cavity technique is used. The calibration constant used in the cavity perturbation formulas is determined experimentally using methanol and ethanediol (ethylene glycol) as reference liquids. Analysis of the data shows that the measurements are accurate to better than 1.0% in almost all cases studied.

  12. Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants

    NASA Astrophysics Data System (ADS)

    Chinone, N.; Yamasue, K.; Hiranaga, Y.; Honda, K.; Cho, Y.

    2012-11-01

    Scanning nonlinear dielectric microscopy (SNDM) can be used to visualize polarization distributions in ferroelectric materials and dopant profiles in semiconductor devices. Without using a special sharp tip, we achieved an improved lateral resolution in SNDM through the measurement of super-higher-order nonlinearity up to the fourth order. We observed a multidomain single crystal congruent LiTaO3 (CLT) sample, and a cross section of a metal-oxide-semiconductor (MOS) field-effect-transistor (FET). The imaged domain boundaries of the CLT were narrower in the super-higher-order images than in the conventional image. Compared to the conventional method, the super-higher-order method resolved the more detailed structure of the MOSFET.

  13. Effects of high-energy electron radiation on polypropylene dielectric

    SciTech Connect

    Hammoud, A.N.

    1988-01-01

    Polypropylene, a polymeric materials widely used as the main dielectric in many high-voltage components such as capacitors and cables, was exposed to electron irradiation in air at room temperature. The 25.4-{mu}m-thick dry polypropylene films were irradiated to different doses up to 10{sup 8} rads with electron beam having energies of 0.5, 1.0, and 1.5 MeV. Monoisopropyl biphenyl (MIPB)-impregnated polypropylene films were also exposed to 1-MeV electron beam to doses up to 10{sup 8} rads and the post-irradiation effects on the electrical, mechanical, and morphological and chemical properties of the films were evaluated. The electrical properties included the AC, DC and pulsed breakdown strengths, dielectric constant, dissipation factor, conductivity, and pulsed life-endurance. The mechanical properties comprised the Young's modulus, elongation-at-break, tensile strength, complex modulus, and mechanical loss. Finally, the morphological and chemical diagnoses carried out included surface morphology, elemental analysis, crystallinity changes, and identification of newly formed bonds and degree of oxidation. The results obtained indicate that the dry polypropylene films started to exhibit degradation at doses as low as 10{sup 6} rads. The properties that were mostly affected included the film's tensile properties, pulsed life, dissipation factor, and electrical conductivity.

  14. Investigation on thermo-mechanical instability of porous low dielectric constant materials

    NASA Astrophysics Data System (ADS)

    Zin, Emil Hyunbae

    This study investigates the structural stability of porous low dielectric constant materials (PLK) under thermal and mechanical load and the influence of contributing factors including porosity as intrinsic factor and plasma damage and moisture absorption as extrinsic factors on thermo-mechanical instability of PLK in advanced Cu/PLK interconnects. For this purpose, a ball indentation creep test technique was developed to examine the thermal and mechanical instability of PLK at relevant load and temperature conditions in the interconnect structure. Our exploration with the ball indentation creep test found that PLK films plastically deforms with time, indicating that viscoplastic deformation does occur under relevant conditions of PLK processing. On the basis of the results that the increase of the indentation depth with time shows more noticeable difference in PLK films with higher porosity, plasma exposure, and moisture absorption, it is our belief that PLK stability is greatly affected by porosity, plasma damage and moisture. Viscous flow was found to be mechanism for the viscoplastic deformation at the temperature and load of real PLK integration processing. This finding was obtained from the facts that the kinetics of the indentation creep fit very well with the viscous flow model and the extracted stress exponent is close to unity. Based on the results of temperature dependence in all PLK films, the activation energy(~1.5eV) of the viscosity back calculated from the experimental value of the kinetics was found to be much small than that of a pure glass (> 4eV). This suggests that the viscous flow of PLK is controlled by chemical reaction happening in PLK matrix. The FT-IR measurement for the examination of chemical bond reconfiguration shows that the intensity of Si-OH bonds increases with the flow while that of Si-O-Si, -CHX and Si-CH 3 bonds decreases, indicating that chemical reactions are involved in the deformation process. From these findings, it is

  15. The physics of ferroelectric and high dielectric constant memories.

    SciTech Connect

    Auciello, O.; Scott, J. F.; Ramesh, R.; Materials Science Division; Univ. of New South Wales; Univ. of Maryland

    1998-07-01

    Imagine you are in the last stages of typing your thesis, the year is 1980, and it's a hot, hazy summer afternoon, a thunderstorm brews on the horizon. Tense and tired, you have forgotten to save the document on your hard disk. Suddenly, lightning strikes! Your computer shuts down. Your final chapter is lost.

  16. SILC decay in La 2O 3 gate dielectrics grown on Ge substrates subjected to constant voltage stress

    NASA Astrophysics Data System (ADS)

    Rahman, M. S.; Evangelou, E. K.; Androulidakis, I. I.; Dimoulas, A.; Mavrou, G.; Galata, S.

    2010-09-01

    The effect of constant voltage stress (CVS) on Pt/La 2O 3/ n-Ge MOS devices biased at accumulation is investigated and reported. It is found that the stress induced leakage current (SILC) initially increases due to electron charge trapping on pre-existing bulk oxide defects. After 10 s approximately, a clear decay of SILC commences which follows a t-n power law, with n lying between 0.56 and 0.75. This decay of SILC is not changed or reversed when the stressing voltage stops for short time intervals. The effect is attributed to the creation of new positively charged defects in the oxide because of the applied stressing voltage, while other mechanism such as dielectric relaxation proposed in the past is proved insufficient to explain the experimental data. Also high frequency capacitance vs. gate voltage ( C- V g) curves measured under different CVS conditions divulge the creation of defects and charge trapping characteristics of La 2O 3 preciously. At low CVS exemplify the generation positively charged defects, however at higher CVS charge trapping obeys a model that was previously proposed and is a continuous distribution of traps.

  17. Cast dielectric composite linear accelerator

    DOEpatents

    Sanders, David M.; Sampayan, Stephen; Slenes, Kirk; Stoller, H. M.

    2009-11-10

    A linear accelerator having cast dielectric composite layers integrally formed with conductor electrodes in a solventless fabrication process, with the cast dielectric composite preferably having a nanoparticle filler in an organic polymer such as a thermosetting resin. By incorporating this cast dielectric composite the dielectric constant of critical insulating layers of the transmission lines of the accelerator are increased while simultaneously maintaining high dielectric strengths for the accelerator.

  18. Determination of plasma frequency, damping constant, and size distribution from the complex dielectric function of noble metal nanoparticles

    NASA Astrophysics Data System (ADS)

    Mendoza Herrera, Luis J.; Arboleda, David Muñetón; Schinca, Daniel C.; Scaffardi, Lucía B.

    2014-12-01

    This paper develops a novel method for simultaneously determining the plasma frequency ωP and the damping constant γfr e e in the bulk damped oscillator Drude model, based on experimentally measured real and imaginary parts of the metal refractive index in the IR wavelength range, lifting the usual approximation that restricts frequency values to the UV-deep UV region. Our method was applied to gold, silver, and copper, improving the relative uncertainties in the final values for ωp (0.5%-1.6%) and for γfr e e (3%-8%), which are smaller than those reported in the literature. These small uncertainties in ωp and γfr e e determination yield a much better fit of the experimental complex dielectric function. For the case of nanoparticles (Nps), a series expansion of the Drude expression (which includes ωp and γfr e e determined using our method) enables size-dependent dielectric function to be written as the sum of three terms: the experimental bulk dielectric function plus two size corrective terms, one for free electron, and the other for bound-electron contributions. Finally, size distribution of nanometric and subnanometric gold Nps in colloidal suspension was determined through fitting its experimental optical extinction spectrum using Mie theory based on the previously determined dielectric function. Results are compared with size histogram obtained from Transmission Electron Microscopy (TEM).

  19. Determination of plasma frequency, damping constant, and size distribution from the complex dielectric function of noble metal nanoparticles

    SciTech Connect

    Mendoza Herrera, Luis J.; Arboleda, David Muñetón; Schinca, Daniel C.; Scaffardi, Lucía B.

    2014-12-21

    This paper develops a novel method for simultaneously determining the plasma frequency ω{sub P}   and the damping constant γ{sub free} in the bulk damped oscillator Drude model, based on experimentally measured real and imaginary parts of the metal refractive index in the IR wavelength range, lifting the usual approximation that restricts frequency values to the UV-deep UV region. Our method was applied to gold, silver, and copper, improving the relative uncertainties in the final values for ω{sub p} (0.5%–1.6%) and for γ{sub free} (3%–8%), which are smaller than those reported in the literature. These small uncertainties in ω{sub p} and γ{sub free} determination yield a much better fit of the experimental complex dielectric function. For the case of nanoparticles (Nps), a series expansion of the Drude expression (which includes ω{sub p} and γ{sub free} determined using our method) enables size-dependent dielectric function to be written as the sum of three terms: the experimental bulk dielectric function plus two size corrective terms, one for free electron, and the other for bound-electron contributions. Finally, size distribution of nanometric and subnanometric gold Nps in colloidal suspension was determined through fitting its experimental optical extinction spectrum using Mie theory based on the previously determined dielectric function. Results are compared with size histogram obtained from Transmission Electron Microscopy (TEM)

  20. The electro-mechanical phase transition of Gent model dielectric elastomer tube with two material constants

    NASA Astrophysics Data System (ADS)

    Liu, Liwu; Luo, Xiaojian; Fei, Fan; Wang, Yixing; Leng, Jinsong; Liu, Yanju

    2013-04-01

    Applied to voltage, a dielectric elastomer membrane may deform into a mixture of two states under certain conditions. One of which is the flat state and the other is the wrinkled state. In the flat state, the membrane is relatively thick with a small area, while on the contrary, in the wrinkled state, the membrane is relatively thin with a large area. The coexistence of these two states may cause the electromechanical phase transition of dielectric elastomer. The phase diagram of idea dielectric elastomer membrane under unidirectional stress and voltage inspired us to think about the liquid-to-vapor phase transition of pure substance. The practical working cycle of a steam engine includes the thermodynamical process of liquid-to-vapor phase transition, the fact is that the steam engine will do the maximum work if undergoing the phase transition process. In this paper, in order to consider the influence of coexistent state of dielectric elastomer, we investigate the homogeneous deformation of the dielectric elastomer tube. The theoretical model is built and the relationship between external loads and stretch are got, we can see that the elastomer tube experiences the coexistent state before reaching the stretching limit from the diagram. We think these results can guide the design and manufacture of energy harvesting equipments.

  1. Investigation of temperature dependent dielectric constant of a sputtered TiN thin film by spectroscopic ellipsometry

    SciTech Connect

    Tripura Sundari, S. Ramaseshan, R.; Jose, Feby; Dash, S.; Tyagi, A. K.

    2014-01-21

    The temperature dependence of optical constants of titanium nitride thin film is investigated using Spectroscopic Ellipsometry (SE) between 1.4 and 5 eV in the temperature range of 300 K to 650 K in steps of 50 K. The real and imaginary parts of the dielectric functions ε{sub 1}(E) and ε{sub 2}(E) marginally increase with increase in temperature. A Drude Lorentz dielectric analysis based on free electron and oscillator model are carried out to describe the temperature behavior. With increase in temperature, the unscreened plasma frequency and broadening marginally decreased and increased, respectively. The parameters of the Lorentz oscillator model also showed that the relaxation time decreased with temperature while the oscillator energies increased. This study shows that owing to the marginal change in the refractive index with temperature, titanium nitride can be employed for surface plasmon sensor applications even in environments where rise in temperature is imminent.

  2. Anomalous change in dielectric constant of CaCu{sub 3}Ti{sub 4}O{sub 12} under violet-to-ultraviolet irradiation

    SciTech Connect

    Masingboon, C.; Eknapakul, T.; Suwanwong, S.; Buaphet, P.; Nakajima, H.; Mo, S.-K.; Thongbai, P.; King, P. D. C.; Maensiri, S.; Meevasana, W.

    2013-05-20

    The influence of light illumination on the dielectric constant of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) polycrystals is studied in this work. When exposed to 405-nm laser light, a reversible enhancement in the room temperature capacitance as high as 22% was observed, suggesting application of light-sensitive capacitance devices. To uncover the microscopic mechanisms mediating this change, we performed electronic structure measurements, using photoemission spectroscopy, and measured the electrical conductivity of the CCTO samples under different conditions of light exposure and oxygen partial pressure. Together, these results suggest that the large capacitance enhancement is driven by oxygen vacancies induced by the irradiation.

  3. Effect of species structure and dielectric constant on C-band forest backscatter

    NASA Technical Reports Server (NTRS)

    Lang, R. H.; Landry, R.; Kilic, O.; Chauhan, N.; Khadr, N.; Leckie, D.

    1993-01-01

    A joint experiment between Canadian and USA research teams was conducted early in Oct. 1992 to determine the effect of species structure and dielectric variations on forest backscatter. Two stands, one red pine and one jack pine, in the Petawawa National Forestry Institute (PNFI) were utilized for the experiment. Extensive tree architecture measurements had been taken by the Canada Centre for Remote Sensing (CCRS) several months earlier by employing a Total Station surveying instrument which provides detailed information on branch structure. A second part of the experiment consisted of cutting down several trees and using dielectric probes to measure branch and needle permittivity values at both sites. The dielectric and the tree geometry data were used in the George Washington University (GWU) Vegetation Model to determine the C band backscattering coefficients of the individual stands for VV polarization. The model results show that backscatter at C band comes mainly from the needles and small branches and the upper portion of the trunks acts only as an attenuator. A discussion of variation of backscatter with specie structure and how dielectric variations in needles for both species may affect the total backscatter returns is provided.

  4. Interfacial phenomena in high-kappa dielectrics

    NASA Astrophysics Data System (ADS)

    Mathew, Anoop

    The introduction of novel high-kappa dielectric materials to replace the traditional SiO2 insulating layer in CMOS transistors is a watershed event in the history of transistor development. Further, replacement of the traditional highly-doped polycrystalline silicon gate electrode with a new set of materials for metal gates complicates the transition and introduces further integration challenges. A whole variety of new material surfaces and interfaces are thus introduced that merit close investigation to determine parameters for optimal device performance. Nitrogen is a key component that improves the performance of a variety of materials for the next generation of these CMOS transistors. Nitrogen is introduced into new gate dielectric materials such as hafnium silicates as well as in potential metal gate materials such as hafnium nitride. A photoemission study of the binding energies of the various atoms in these systems using photoemission reveals the nature of the atomic bonding. The current study compares hafnium silicates of various compositions which were thermally nitrided at different temperatures in ammonia, hafnium nitrides, and thin HfO2 films using photoelectron spectroscopy. A recurring theme that is explored is the competition between oxygen and nitrogen atoms in bonding with hafnium and other atoms. The N 1s photoemission peak is seen to have contributions from its bonding with hafnium, oxygen, and silicon atoms. The Hf 4f and O 1s spectra similarly exhibit signatures of their bonding environment with their neighboring atoms. Angle resolved photoemission and in-situ annealing/argon sputtering experiments are used to elucidate the nature of the bonding and its evolution with processing. A nondestructive profilitng of nitrogen distribution as a function of composition in nitrided hafnium silicates is also constructed using angle resolved photoemission as a function of the take-off angle. These results are corroborated with depth reconstruction obtained

  5. Environmental effects on electron transfer from chlorophyll triplet to quinone: role of dielectric constant, viscosity and quinone structure in cellulose acetate films

    SciTech Connect

    Cheddar, G.; Tollin, G.

    1981-01-01

    The effects of environmental parameters on chlorophyll triplet quenching and electron transfer to quinones have been investigated in a system consisting of donor and acceptor incorporated into a cellulose acetate film which was subsequently exposed to solvent. Triplet quenching by a diffusional mechanism was found to occur in the dry film, with steric effects being a major determinant of quencher effectiveness. No formation of separated radicals was found under these conditions, probably because the high viscosity prevented separation of the initially formed radical-ion pair. When the film was subsequently exposed to water, triplet quenching became more effective and separated radical production occurred. This is attributed to effects of decreased microviscosity and increased dielectric constant. Both steric effects and quinone redox potential were found to influence radical yields. Rate constants for reverse electron transfer were independent of quinone redox potential. When solvents other than pure water were used, radical yields were observed to increase with the dielectric constant. This is ascribed to an increase in the ease of separation of the radical-ion pair.

  6. Enhanced performance in capacitive force sensors using carbon nanotube/polydimethylsiloxane nanocomposites with high dielectric properties

    NASA Astrophysics Data System (ADS)

    Jang, Hyeyoung; Yoon, Hyungsuk; Ko, Youngpyo; Choi, Jaeyoo; Lee, Sang-Soo; Jeon, Insu; Kim, Jong-Ho; Kim, Heesuk

    2016-03-01

    Force sensors have attracted tremendous attention owing to their applications in various fields such as touch screens, robots, smart scales, and wearable devices. The force sensors reported so far have been mainly focused on high sensitivity based on delicate microstructured materials, resulting in low reproducibility and high fabrication cost that are limitations for wide applications. As an alternative, we demonstrate a novel capacitive-type force sensor with enhanced performance owing to the increased dielectric properties of elastomers and simple sensor structure. We rationally design dielectric elastomers based on alkylamine modified-multi-walled carbon nanotube (MWCNT)/polydimethylsiloxane (PDMS) composites, which have a higher dielectric constant than pure PDMS. The alkylamine-MWCNTs show excellent dispersion in a PDMS matrix, thus leading to enhanced and reliable dielectric properties of the composites. A force sensor array fabricated with alkylamine-MWCNT/PDMS composites presents an enhanced response due to the higher dielectric constant of the composites than that of pure PDMS. This study is the first to report enhanced performance of capacitive force sensors by modulating the dielectric properties of elastomers. We believe that the disclosed strategy to improve the sensor performance by increasing the dielectric properties of elastomers has great potential in the development of capacitive force sensor arrays that respond to various input forces.Force sensors have attracted tremendous attention owing to their applications in various fields such as touch screens, robots, smart scales, and wearable devices. The force sensors reported so far have been mainly focused on high sensitivity based on delicate microstructured materials, resulting in low reproducibility and high fabrication cost that are limitations for wide applications. As an alternative, we demonstrate a novel capacitive-type force sensor with enhanced performance owing to the increased

  7. Tuning of colossal dielectric constant in gold-polypyrrole composite nanotubes using in-situ x-ray diffraction techniques

    SciTech Connect

    Sarma, Abhisakh; Sanyal, Milan K.

    2014-09-15

    In-situ x-ray diffraction technique has been used to study the growth process of gold incorporated polypyrrole nanotubes that exhibit colossal dielectric constant due to existence of quasi-one-dimensional charge density wave state. These composite nanotubes were formed within nanopores of a polycarbonate membrane by flowing pyrrole monomer from one side and mixture of ferric chloride and chloroauric acid from other side in a sample cell that allows collection of x-ray data during the reaction. The size of the gold nanoparticle embedded in the walls of the nanotubes was found to be dependent on chloroauric acid concentration for nanowires having diameter more than 100 nm. For lower diameter nanotubes the nanoparticle size become independent of chloroauric acid concentration and depends on the diameter of nanotubes only. The result of this study also shows that for 50 nm gold-polypyrrole composite nanotubes obtained with 5.3 mM chloroauric acid gives colossal dielectric constant of about 10{sup 7}. This value remain almost constant over a frequency range from 1Hz to 10{sup 6} Hz even at 80 K temperature.

  8. The effect of concentration- and temperature-dependent dielectric constant on the activity coefficient of NaCl electrolyte solutions

    SciTech Connect

    Valiskó, Mónika; Boda, Dezső

    2014-06-21

    Our implicit-solvent model for the estimation of the excess chemical potential (or, equivalently, the activity coefficient) of electrolytes is based on using a dielectric constant that depends on the thermodynamic state, namely, the temperature and concentration of the electrolyte, ε(c, T). As a consequence, the excess chemical potential is split into two terms corresponding to ion-ion (II) and ion-water (IW) interactions. The II term is obtained from computer simulation using the Primitive Model of electrolytes, while the IW term is estimated from the Born treatment. In our previous work [J. Vincze, M. Valiskó, and D. Boda, “The nonmonotonic concentration dependence of the mean activity coefficient of electrolytes is a result of a balance between solvation and ion-ion correlations,” J. Chem. Phys. 133, 154507 (2010)], we showed that the nonmonotonic concentration dependence of the activity coefficient can be reproduced qualitatively with this II+IW model without using any adjustable parameter. The Pauling radii were used in the calculation of the II term, while experimental solvation free energies were used in the calculation of the IW term. In this work, we analyze the effect of the parameters (dielectric constant, ionic radii, solvation free energy) on the concentration and temperature dependence of the mean activity coefficient of NaCl. We conclude that the II+IW model can explain the experimental behavior using a concentration-dependent dielectric constant and that we do not need the artificial concept of “solvated ionic radius” assumed by earlier studies.

  9. Dielectric Constants of Refrigerants R113, R114, R114B2, R115, R116, and R124

    NASA Astrophysics Data System (ADS)

    Kashiwagi, Hiroshi; Harada, Noboru; Tanaka, Yoshiyuki; Kubota, Hironobu; Makita, Tadashi

    The dielectric constants of six refrigerants have been measured in both gaseous and liquid phases. The fluids used and the experimental ranges of temperature and pressure are as follows : R113 (1, 2, 2- Trichlorotrifluoroethane CClF2CCl2F) : 298.15-423.15K, 0.1-17.3MPa, R1l4 (1, 2- Dichlorotetrafluoroethane CClF2CClF2) : 298.15-423.15K, 0.2-17.2MPa, R114B2 (1, 2- Dibromotetrafluoroethane CBrF2CBrF2) : 298.15-423.15K, 0.2-17.3MPa, R1l5 (Chloropentafluoroethane CClF2CF3) : 298.15 373.15K. O.1-17.1MPa, R1l6 (Hexafluoroethane CF3CF3) : 283.15-373.15 K, 0.2-16.9MPa, R124 (1-Chloro-2, 2, 2, -tetrafluoroethane CHClFCF3) : 273.15 373.15K, 0.1-10.5MPa The measurements were performed using a frequency-counting method on a relative basis with an uncertainty less than ±0.1%.The experimental results are given by polynomial equations. The smoothed value tables are also given for practical convenience. The pressure dependence of dielectric constants in liquid phase is represented by a similar expression to the Tait equation. The effects of pressure, temperature, and density on the dielectric constant and the molar polarization defined by the Clausius-Mossotti relation are discussed in term of polarity of molecules of each refrigerant.

  10. Investigation of Biodiesel Through Photopyroelectric and Dielectric-Constant Measurements as a Function of Temperature: Freezing/Melting Interval

    NASA Astrophysics Data System (ADS)

    Zanelato, E. B.; Machado, F. A. L.; Rangel, A. B.; Guimarães, A. O.; Vargas, H.; da Silva, E. C.; Mansanares, A. M.

    2015-06-01

    Biodiesel is a promising option for alternative fuels since it derives from natural and renewable materials; it is biodegradable and less polluting than fossil fuels. A gradual replacement of diesel by biodiesel has been adopted by many countries, making necessary the investigation of the physical properties of biodiesel and of its mixture in diesel. Photothermal techniques, specifically the photopyroelectric technique (PPE), have proved to be suitable in the characterization of biodiesel and of its precursor oils, as well as of the biodiesel/diesel mixtures. In this paper, we investigate thermal and electrical properties of animal fat-based biodiesel as a function of temperature, aiming to characterize the freezing/melting interval and the changes in the physical properties from the solid to the liquid phase. The samples were prepared using the transesterification method, by the ethylic route. Optical transmittance experiments were carried out in order to confirm the phase transition interval. Solid and liquid phases present distinct thermal diffusivities and conductivities, as well as dielectric constants. The PPE signal amplitude is governed by the changes in the thermal diffusivity/conductivity. As a consequence, the amplitude of the signal becomes like a step function, which is smoothed and sometimes delayed by the nucleation processes during cooling. A similar behavior is found in the dielectric constant data, which is higher in the liquid phase since the molecules have a higher degree of freedom. Both methods (PPE/dielectric constant) proved to be useful in the characterization of the freezing/melting interval, as well as to establish the distinction in the physical properties of solid and liquid phases. The methodology allowed a discussion of the cloud point and the pour point of the samples in the temperature variation interval.

  11. Thermally stable yttrium-scandium oxide high-k dielectrics deposited by a solution process

    NASA Astrophysics Data System (ADS)

    Hu, Wenbing; Frost, Bradley; Peterson, Rebecca L.

    2016-03-01

    We investigated the thermal stability of electrical properties in ternary alloy (Y x Sc1-x )2O3 high-k oxides as a function of yttrium fraction, x. The yttrium-scandium oxide dielectric films are deposited using a facile ink-based process. The oxides have a stoichiometry-dependent relative dielectric constant of 26.0 to 7.7 at 100 kHz, low leakage current density of 10-8 A·cm-2, high breakdown field of 4 MVṡcm-1, and interface trap density of 1012 cm-2·eV-1 with silicon. Compared with binary oxides, ternary alloys exhibit less frequency dispersion of the dielectric constant and a higher crystallization temperature. After crystallization is induced through a 900 °C anneal, ternary (Y0.6Sc0.4)2O3 films maintain their low leakage current and high breakdown field. In contrast, the electrical performance of the binary oxides significantly degrades following the same treatment. The solution-processed ternary oxide dielectrics demonstrated here may be used as high-k gate insulators in complementary metal-oxide semiconductor (CMOS) technologies, in novel electronic material systems and devices, and in printed, flexible thin film electronics, and as passivation layers for high power devices. These oxides may also be used as insulators in fabrication process flows that require a high thermal budget.

  12. A 3M high temperature dielectric film

    NASA Technical Reports Server (NTRS)

    Hampl, Edward, Jr.

    1994-01-01

    The performance characteristics of a dielectric film are summarized. Additionally, the film's environmental and chemical properties are listed: low shrinkage to 300 C; moisture insensitive; low outgassing under vacuum; excellent surface qualities--easy metallization of film; flame retardant; and low smoke generation. A series of graphs that display the performance characteristics of the film are also presented.

  13. Lifetime of high-k gate dielectrics and analogy with strength of quasibrittle structures

    NASA Astrophysics Data System (ADS)

    Le, Jia-Liang; Bažant, Zdeněk P.; Bazant, Martin Z.

    2009-11-01

    The two-parameter Weibull distribution has been widely adopted to model the lifetime statistics of dielectric breakdown under constant voltage, but recent lifetime testing for high-k gate dielectrics has revealed a systematic departure from Weibull statistics, evocative of lifetime statistics for small quasibrittle structures under constant stress. Here we identify a mathematical analogy between the dielectric breakdown in semiconductor electronic devices and the finite-size weakest-link model for mechanical strength of quasibrittle structures and adapt a recently developed probabilistic theory of structural failure to gate dielectrics. Although the theory is general and does not rely on any particular model of local breakdown events, we show how its key assumptions can be derived from the classical dielectric breakdown model, which predicts certain scaling exponents. The theory accurately fits the observed kinked shape of the histograms of lifetime plotted in Weibull scale, as well as the measured dependence of the median lifetime on the gate area (or size), including its deviation from a power law. The theory also predicts that the Weibull modulus for breakdown lifetime increases in proportion to the thickness of the oxide layer and suggests new ideas for more effective reliability testing.

  14. Effect of Solvent Dielectric Constant on the Formation of Large Flat Bilayer Stacks in a Lecithin/Hexadecanol Hydrogel.

    PubMed

    Nakagawa, Yasuharu; Nakazawa, Hiromitsu; Kato, Satoru

    2016-07-12

    We investigated the effect of dielectric properties of the aqueous medium on the novel type of hydrogel composed of a crude lecithin mixture (PC70) and hexadecanol (HD), in which charged sheet-like bilayers are kept far apart due to interbilayer repulsive interaction. We used dipropylene glycol (DPG) as a modifier of the dielectric properties and examined its effect on the hydrogel by synchrotron X-ray diffraction, differential scanning calorimetry (DSC), polarized optical microscopy, and freeze-fracture electron microscopy. We found that at a DPG weight fraction in the aqueous medium WDPG ≈ 0.4, the bilayer organization is transformed into unusually large flat bilayer stacks with a regular lamellar spacing of 6.25 nm and consequently disintegration of the hydrogel takes place. Semiquantitative calculation of the interbilayer interaction energy based on the Deyaguin-Landau-Verwey-Overbeek (DLVO) theory suggested that the reduction of the aqueous medium dielectric constant ε by DPG may lower the energy barrier preventing flat bilayers from coming closer together. We inferred that the size of the bilayer sheet increases because the reduction of ε promotes protonation of acidic lipids that work as edge-capping molecules. PMID:27322136

  15. Fluorinated Graphene as High Performance Dielectric Materials and the Applications for Graphene Nanoelectronics

    PubMed Central

    Ho, Kuan-I; Huang, Chi-Hsien; Liao, Jia-Hong; Zhang, Wenjing; Li, Lain-Jong; Lai, Chao-Sung; Su, Ching-Yuan

    2014-01-01

    There is broad interest in surface functionalization of 2D materials and its related applications. In this work, we present a novel graphene layer transistor fabricated by introducing fluorinated graphene (fluorographene), one of the thinnest 2D insulator, as the gate dielectric material. For the first time, the dielectric properties of fluorographene, including its dielectric constant, frequency dispersion, breakdown electric field and thermal stability, were comprehensively investigated. We found that fluorographene with extremely thin thickness (5 nm) can sustain high resistance at temperature up to 400°C. The measured breakdown electric field is higher than 10 MV cm−1, which is the heightest value for dielectric materials in this thickness. Moreover, a proof-of-concept methodology, one-step fluorination of 10-layered graphene, is readily to obtain the fluorographene/graphene heterostructures, where the top-gated transistor based on this structure exhibits an average carrier mobility above 760 cm2/Vs, higher than that obtained when SiO2 and GO were used as gate dielectric materials. The demonstrated fluorographene shows excellent dielectric properties with fast and scalable processing, providing a universal applications for the integration of versatile nano-electronic devices. PMID:25081226

  16. The local structure, infrared phonon modes and the origin of the dielectric constant in La2Hf2O7 thin film

    NASA Astrophysics Data System (ADS)

    Qi, Zeming; Cheng, Xuerui; Zhang, Guobin; Li, Tingting; Wang, Yuyin; Shao, Tao; Li, Chengxiang; He, Bo

    2012-03-01

    The local structure and dielectric properties of crystalline and amorphous La2Hf2O7 (LHO) thin film were studied by X-ray absorption spectroscopy and infrared spectroscopy. The basic infrared phonon modes with most contributions to the static dielectric constant of crystal LHO are preserved, which causes the considerable value of the static dielectric constant in the amorphous thin film. The preservation of the main infrared phonon modes in the amorphous thin film is because it has similar the nearest local structures around Hf and La atoms as the crystal LHO. This inheritance of the local structural and vibrational features of the crystal phase is the origin of the dielectric constant of the LHO thin film.

  17. Magneto-Optical Activity in High Index Dielectric Nanoantennas.

    PubMed

    de Sousa, N; Froufe-Pérez, L S; Sáenz, J J; García-Martín, A

    2016-01-01

    The magneto-optical activity, namely the polarization conversion capabilities of high-index, non-absorbing, core-shell dielectric nanospheres is theoretically analyzed. We show that, in analogy with their plasmonic counterparts, the polarization conversion in resonant dielectric particles is linked to the amount of electromagnetic field probing the magneto-optical material in the system. However, in strong contrast with plasmon nanoparticles, due to the peculiar distribution of the internal fields in resonant dielectric spheres, the magneto-optical response is fully governed by the magnetic (dipolar and quadrupolar) resonances with little effect of the electric ones. PMID:27488903

  18. Magneto-Optical Activity in High Index Dielectric Nanoantennas

    NASA Astrophysics Data System (ADS)

    de Sousa, N.; Froufe-Pérez, L. S.; Sáenz, J. J.; García-Martín, A.

    2016-08-01

    The magneto-optical activity, namely the polarization conversion capabilities of high-index, non-absorbing, core-shell dielectric nanospheres is theoretically analyzed. We show that, in analogy with their plasmonic counterparts, the polarization conversion in resonant dielectric particles is linked to the amount of electromagnetic field probing the magneto-optical material in the system. However, in strong contrast with plasmon nanoparticles, due to the peculiar distribution of the internal fields in resonant dielectric spheres, the magneto-optical response is fully governed by the magnetic (dipolar and quadrupolar) resonances with little effect of the electric ones.

  19. Magneto-Optical Activity in High Index Dielectric Nanoantennas

    PubMed Central

    de Sousa, N.; Froufe-Pérez, L. S.; Sáenz, J. J.; García-Martín, A.

    2016-01-01

    The magneto-optical activity, namely the polarization conversion capabilities of high-index, non-absorbing, core-shell dielectric nanospheres is theoretically analyzed. We show that, in analogy with their plasmonic counterparts, the polarization conversion in resonant dielectric particles is linked to the amount of electromagnetic field probing the magneto-optical material in the system. However, in strong contrast with plasmon nanoparticles, due to the peculiar distribution of the internal fields in resonant dielectric spheres, the magneto-optical response is fully governed by the magnetic (dipolar and quadrupolar) resonances with little effect of the electric ones. PMID:27488903

  20. Charge trapping at Pt/high- k dielectric (Ta 2O 5) interface

    NASA Astrophysics Data System (ADS)

    Stojanovska-Georgievska, L.; Novkovski, N.; Atanassova, E.

    2011-09-01

    A detailed analysis of the effects of constant low current injection was done, both in accumulation ( J=0.001-0.2 mA cm -2) and in inversion ( J=0.001-0.04 mA/cm 2). The samples under investigation were metal-insulator-silicon structures containing high- k dielectric Ta 2O 5 radio frequency sputtered on p-type Si wafers, with Pt metal gate electrodes. The obtained results were compared with the ones obtained for Al gate samples. This experiment confirms the occurrence of charge trapping in the case of high-work-function Pt as metal. The effect has been attributed to emitting of electrons into the Pt conduction band during which creation of empty traps in the dielectric occurs, which then attract electrons injected in the dielectric. In order to examine the reversibility of the process, successive short runs as well as long runs (up to 10000 s) were performed.

  1. Measurement of pressures up to 7 MPa applying pressure balances for dielectric-constant gas thermometry

    NASA Astrophysics Data System (ADS)

    Zandt, Thorsten; Sabuga, Wladimir; Gaiser, Christof; Fellmuth, Bernd

    2015-10-01

    For the determination of the Boltzmann constant by dielectric-constant gas thermometry, the uncertainty of pressure measurements in helium up to 7 MPa has been decreased compared with previous achievements (Sabuga 2011 PTB-Mitt. 121 247-55). This was possible by performing comprehensive cross-float experiments with a system of six special pressure balances and the synchronization of their effective areas. It is now possible to measure a helium pressure of 7 MPa with a relative standard uncertainty of 1.0 ppm applying a 2 cm2 piston-cylinder unit, the calibration of which is traceable to the SI base units.

  2. Spin-coated and PECVD low dielectric constant porous organosilicate films studied by 1D and 2D solid-state NMR.

    PubMed

    Gerbaud, Guillaume; Hediger, Sabine; Bardet, Michel; Favennec, Laurent; Zenasni, Aziz; Beynet, Julien; Gourhant, Olivier; Jousseaume, Vincent

    2009-11-14

    In the research field of the sub-65 nm semiconductor industry, organosilicate SiOCH films with low dielectric constant (k < 2.4) need to be developed in order to improve the performance of integrated circuits [International Roadmap for Semiconductors (ITRS), San Jose, CA, 2004]. One way to produce SiOCH films of low dielectric constant is to introduce pores into the film. This is usually obtained in two steps. Firstly, co-deposition of a matrix precursor, with a sacrificial organic porogen, either by plasma enhanced chemical vapor deposition (PECVD) or spin-coating. Secondly, application of a specific thermal treatment to remove the porogen and create the porosity. This last step can be improved by adding to the thermal process a super-critical CO(2) treatment, an UV irradiation or an electronic bombardment (e-beam). In this study, the two deposition processes as well as the various treatments applied to eliminate the porogens were evaluated and compared using high-resolution solid-state NMR. For this purpose, hybrid (containing porogens) and porous films were extensively characterized on the basis of their (1)H, (13)C and (29)Si high-resolution NMR spectra. Information was obtained concerning the crosslinking of the Si skeleton. Spectral features could be correlated to the processes used. Isotropic chemical shift analyses and 2D correlation NMR experiments were used to show the existence and nature of the interactions between the matrix precursor and the organic porogen. PMID:19851550

  3. Tailoring Dielectric Properties and Energy Density of Ferroelectric Polymer Nanocomposites by High-k Nanowires.

    PubMed

    Wang, Guanyao; Huang, Xingyi; Jiang, Pingkai

    2015-08-19

    High dielectric constant (k) polymer nanocomposites have shown great potential in dielectric and energy storage applications in the past few decades. The introduction of high-k nanomaterials into ferroelectric polymers has proven to be a promising strategy for the fabrication of high-k nanocomposites. One-dimensional large-aspect-ratio nanowires exhibit superiority in enhancing k values and energy density of polymer nanocomposites in comparison to their spherical counterparts. However, the impact of their intrinsic properties on the dielectric properties of polymer nanocomposites has been seldom investigated. Herein, four kinds of nanowires (Na2Ti3O7, TiO2, BaTiO3, and SrTiO3) with different inherent characteristics are elaborately selected to fabricate high-k ferroelectric polymer nanocomposites. Dopamine functionalization facilitates the excellent dispersion of these nanowires in the ferroelectric polymer matrix because of the strong polymer/nanowire interfacial adhesion. A thorough comparative study on the dielectric properties and energy storage capability of the nanowires-based nanocomposites has been presented. The results reveal that, among the four types of nanowires, BaTiO3 NWs show the best potential in improving the energy storage capability of the proposed nanocomposites, resulting from the most signficant increase of k while retaining the rather low dielectric loss and leakage current. PMID:26225887

  4. Metal-Dielectric Waveguides for High Efficiency Coupled Emission

    PubMed Central

    Badugu, Ramachandram; Szmacinski, Henryk; Ray, Krishanu; Descrovi, Emiliano; Ricciardi, Serena; Zhang, Douguo; Chen, Junxue; Huo, Yiping; Lakowicz, Joseph R.

    2015-01-01

    We report a metal-dielectric planar structure which provides high efficiency coupling of fluorescence at distances over 100 nm away from the metal surface. This hybrid metal-dielectric waveguide (MDW) consists of a continuous metal film coated with a dielectric layer. We observed efficient long-range coupling of Rhodamine B on top of a 130 nm layer of silica resulting in a narrow angular distribution of the emission. The high efficiency radiation through the Ag film appears to be due to coupling of the fluorophore to an optical waveguide mode with a long propagation length and a narrow resonance. The results were consistent with simulations. These multi-layer structures can be made using vapor deposition and/or spin coating and the silica surface can be used for conjugation to biomolecules and surface-selective detection. This simple hybrid metal-dielectric structures provides new opportunities for fluorescence sensing, genomics, proteomics and diagnostics. PMID:26523286

  5. Effects of Solvent Dielectric Constant and Viscosity on Two Rotational Relaxation Paths of Excited 9-(Dicyanovinyl) Julolidine.

    PubMed

    Yang, Songqiu; Han, Keli

    2016-07-14

    The understanding of the interplay between microenvironment and molecular rotors is helpful for designing and developing of molecular sensors of local physical properties. We present a study on the two rotational relaxation paths of excited 9-(dicyanovinyl) julolidine in several solvents. One rotational path (C-C single-bond rotation, τb) quickly leads to the formation of a twisted state. The other path (C═C double-bond rotation, τc) shows that the populations go back to the ground state directly via a conical intersection between the S1 and ground state. The increase in the solvent dielectric constant shows little effect on the τb lifetime for its small energy barrier (<0.01 eV), but τc lifetime is increased in larger dielectric constant solvents due to the larger energy gap at conical intersection. Both τb and τc are increased greatly with the increased solvent viscosity. τb is more sensitive to viscosity than τc may be due to its larger rotational moiety. PMID:26886050

  6. Inter-Comparison of SMOS and Aquarius Sea Surface Salinity: Effects of the Dielectric Constant and Vicarious Calibration

    NASA Technical Reports Server (NTRS)

    Dinnat, Emmanuel P.; Boutin, Jacqueline; Yin, Xiaobin; Le Vine, David M.

    2014-01-01

    Two spaceborne instruments share the scientific objective of mapping the global Sea Surface Salinity (SSS). ESA's Soil Moisture and Ocean Salinity (SMOS) and NASA's Aquarius use L-band (1.4 GHz) radiometry to retrieve SSS. We find that SSS retrieved by SMOS is generally lower than SSS retrieved by Aquarius, except for very cold waters where SMOS SSS is higher overall. The spatial distribution of the differences in SSS is similar to the distribution of sea surface temperature. There are several differences in the retrieval algorithm that could explain the observed SSS differences. We assess the impact of the dielectric constant model and the ancillary sea surface salinity used by both missions for calibrating the radiometers and retrieving SSS. The differences in dielectric constant model produce differences in SSS of the order of 0.3 psu and exhibit a dependence on latitude and temperature. We use comparisons with the Argo in situ data to assess the performances of the model in various regions of the globe. Finally, the differences in the ancillary sea surface salinity products used to perform the vicarious calibration of both instruments are relatively small (0.1 psu), but not negligible considering the requirements for spaceborne remote sensing of SSS.

  7. Impact of reductive N2/H2 plasma on porous low-dielectric constant SiCOH thin films

    NASA Astrophysics Data System (ADS)

    Cui, Hao; Carter, Richard J.; Moore, Darren L.; Peng, Hua-Gen; Gidley, David W.; Burke, Peter A.

    2005-06-01

    Porous low-dielectric constant (low-κ) SiCOH thin films deposited using a plasma-enhanced chemical-vapor deposition have been comprehensively characterized before and after exposure to a reactive-ion-etch-type plasma of N2 and H2 chemistry. The low-κ film studied in this work is a carbon-doped silicon oxide film with a dielectric constant (κ) of 2.5. Studies show that a top dense layer is formed as a result of significant surface film densification after exposure to N2/H2 plasma while the underlying bulk layer remains largely unchanged. The top dense layer is found to seal the porous bulk SiCOH film. SiCOH films experienced significant thickness reduction, κ increase, and leakage current degradation after plasma exposure, accompanied by density increase, pore collapse, carbon depletion, and moisture content increase in the top dense layer. Both film densification and removal processes during N2/H2 plasma treatment were found to play important roles in the thickness reduction and κ increase of this porous low-κ SiCOH film. A model based upon mutually limiting film densification and removal processes is proposed for the continuous thickness reduction during plasma exposure. A combination of surface film densification, thickness ratio increase of top dense layer to bulk layer, and moisture content increase results in the increase in κ value of this SiCOH film.

  8. Fano resonance in high-permittivity dielectric spheres.

    PubMed

    Kong, Xianghong; Xiao, Gaobiao

    2016-04-01

    In this paper, an approximate model is presented to understand Fano resonance observed in the Mie scattering from a homogeneous dielectric sphere. By using the model, we can analyze the Fano parameters and resonance widths of the dielectric spheres with given lossless high-permittivity materials. An analytic condition for the occurrence of Fano resonance in the homogeneous spheres can be shown in the approximate model. PMID:27140783

  9. Super soft silicone elastomers with high dielectric permittivity

    NASA Astrophysics Data System (ADS)

    Madsen, Frederikke B.; Yu, Liyun; Hvilsted, Søren; Skov, Anne L.

    2015-04-01

    Dielectric elastomers (DEs) have many favourable properties. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young's modulus and increasing the dielectric permittivity of silicone elastomers. A decrease in Young's modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. New soft elastomer matrices with high dielectric permittivity and low Young's modulus, with no loss of mechanical stability, were prepared by two different approaches using chloropropyl-functional silicone polymers. The first approach was based on synthesised chloropropyl-functional copolymers that were cross-linkable and thereby formed the basis of new silicone networks with high dielectric permittivity (e.g. a 43% increase). These networks were soft without compromising other important properties of DEs such as viscous and dielectric losses as well as electrical breakdown strength. The second approach was based on the addition of commercially available chloropropyl-functional silicone oil to commercial LSR silicone elastomer. Two-fold increase in permittivity was obtained by this method and the silicone oil decreased the Young's modulus significantly. The viscous losses, however, also increased with increasing content of silicone oil. Cross-linkable chloropropyl-functional copolymers offer a new silicone elastomer matrix that could form the basis of dielectric elastomers of the future, whereas the chloropropyl silicone oil approach is an easy tool for improvement of the properties of existing commercial silicone elastomers.

  10. Effect of dielectric constant, cavities in series, and cavities in parallel on the product distribution of the oligomerization of methane via microwave plasmas

    SciTech Connect

    Marun, C.; Suib, S.L.; Dery, M.; Harrison, J.B.; Kablaoui, M.

    1996-11-07

    The use of microwave-induced plasmas as a method to oligomerize methane to higher hydrocarbons has been studied. The pressure range used was 10-20 Torr and the applied power was 60 W. The microwave power is coupled to the plasma by means of either an Evenson or a Beenakker cavity, the Beenakker being the most effective. We explored the effect of the presence of a dielectric material on the product distribution for this reaction. The values of the dielectric constants for these materials varied from 2.6 for Pb(Ac){sub 2} to 10,000 for MnO{sub 2} relative to the vacuum. No direct correlation was found, but in some cases the selectivities toward C{sub 6s}to C{sub 8s} were enhanced. TiO{sub 2}and Li{sub 2}CO{sub 3} increased the selectivities toward C{sub 6s}. SnO{sub 2} was the best for selectivities to C{sub 7s}and C{sub 8s}. When a coating of Si/SiC on the reactor walls was present in the plasma zone, the selectivities toward C{sub 6s} and C{sub 7s} increased with respect to both materials (Si and SiC) by themselves. We also studied the effect of cavities in series and cavities in parallel on the oligomerization of methane with and without dielectric material in between the cavities. When methane and iodine are activated separately and then recombined, it seems that the oligomerization of methane is enhanced toward higher hydrocarbons. We found that when a dielectric material is placed in between and when the distance between the two cavities in series is the largest, the oligomerization of methane toward high molecular weight hydrocarbons is maximized. 45 refs., 9 figs., 1 tab.

  11. High stress actuation by dielectric elastomer with oil capsules

    NASA Astrophysics Data System (ADS)

    La, Thanh-Giang; Lau, Gih-Keong; Shiau, Li-Lynn; Tan, Adrian W. Y.

    2014-03-01

    Though capable of generating a large strain, dielectric elastomer actuators (DEAs) generate only a moderate actuation stress not more than 200kPa, which seriously limits its use as artificial muscles for robotic arm. Enhancement of dielectric strength (greater than 500MV/m) by dielectric oil immersion could possibly enable it a larger force generation. Previously, the immersion was done in an oil bath, which limits portability together with DEAs. In this study, we developed portable capsules to enclose oil over the DEA substrate (VHB 4905). The capsules is made of a thinner soft acrylic membrane and they seals dielectric liquid oil (Dow Corning Fluid 200 50cSt). The DEA substrate is a graphiteclad VHB membrane, which is pre-stretched with pure-shear boundary condition for axial actuation. When activated under isotonic condition, the oil-capsule DEA can sustain a very high dielectric field up to 903 MV/m and does not fail; whereas, the dry DEA breaks down at a lower electric field at 570 MV/m. Furthermore, the oil-capsule DEA can produces higher isometric stress change up to 1.05MPa, which is 70% more than the maximum produced by the dry DEA. This study confirmed that oil capping helps DEA achieve very high dielectric strength and generate more stress change for work.

  12. CMUTs with High-K Atomic Layer Deposition Dielectric Material Insulation Layer

    PubMed Central

    Xu, Toby; Tekes, Coskun; Degertekin, F. Levent

    2014-01-01

    Use of highdielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SixNy) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2 such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD SixNy and 100-nm HfO2 insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

  13. CMUTs with high-K atomic layer deposition dielectric material insulation layer.

    PubMed

    Xu, Toby; Tekes, Coskun; Degertekin, F

    2014-12-01

    Use of highdielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Six)Ny)) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2) such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD Six)Ny) and 100-nm HfO2) insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

  14. Stretchable, High-k Dielectric Elastomers through Liquid-Metal Inclusions.

    PubMed

    Bartlett, Michael D; Fassler, Andrew; Kazem, Navid; Markvicka, Eric J; Mandal, Pratiti; Majidi, Carmel

    2016-05-01

    An all-soft-matter composite with exceptional electro-elasto properties is demonstrated by embedding liquid-metal inclusions in an elastomer matrix. This material exhibits a unique combination of high dielectric constant, low stiffness, and large strain limit (ca. 600% strain). The elasticity, electrostatics, and electromechanical coupling of the composite are investigated, and strong agreement with predictions from effective medium theory is found. PMID:27007888

  15. High transformer ratio of multi-channel dielectric wakefield structures

    NASA Astrophysics Data System (ADS)

    Shchelkunov, Sergey V.; Marshall, Thomas C.; Sotnikov, Gennadij V.; Hirshfield, Jay L.

    2016-09-01

    Dielectric wakefield (DWA) accelerator concepts are receiving attention on account of their promising performance, mechanical simplicity, and anticipated low cost. Interest in DWA physics directed toward an advanced high-gradient accelerator has been enhanced by a finding that some dielectrics can withstand very high fields (>1 GV/m) for the short times during the passage of charged bunches along dielectric-lined channels. In a two-channel structure, a drive bunch train propagates in a first channel, and in the second adjacent channel where a high gradient wakefield develops, a witness bunch is accelerated. Compared with single-channel DWA's, a two-beam accelerator delivers a high transformer ratio, and thereby reduces the number of drive beam sections needed to achieve a given final test beam energy. An overview of multi-channel DWA structures will be given, with an emphasis on two-channel structures, presenting their advantages and drawbacks, and potential impact on the field. Studies aimed to examine charging rate and charge distribution in a thin walled dielectric wakefield accelerator from a passing charge bunch and the physics of conductivity and discharge phenomena in dielectric materials useful for such accelerator applications are presented in a separate paper in the EAAC-2015 conference proceedings.

  16. Cross-linking high-k fluoropolymer gate dielectrics enhances the charge mobility in rubrene field effect transistors

    NASA Astrophysics Data System (ADS)

    Adhikari, Jwala; Gadinski, Matthew; Wang, Qing; Gomez, Enrique

    2015-03-01

    Polymer dielectrics are promising materials where the chemical flexibility enables gate insulators with desired properties. For example, polar groups can be introduced to enhance the dielectric constant, although fluctuations in chain conformations at the semiconductor-dielectric interface can introduce energetic disorder and limit charge mobilities in thin-film transistors. Here, we demonstrate a photopatternable high-K fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant between 8 and 11. The bromotrifluoroethylene moiety enables photo-crosslinking and stabilization of gate insulator films while also significantly enhancing the population of trans torsional conformations of the chains. Using rubrene single crystals as the active layer, charge mobilities exceeding 10 cm2/Vs are achieved in thin film transistors with cross-linked P(VDF-BTFE) gate dielectrics. We hypothesize that crosslinking reduces energetic disorder at the dielectric-semiconductor interface by suppressing segmental motion and controlling chain conformations of P(VDF-BTFE), thereby leading to approximately a three-fold enhancement in the charge mobility of rubrene thin-film transistors over devices incorporating uncross-linked dielectrics or silicon oxide. Center for Flexible Electronic, Penn State; The Dow Chemical Company.

  17. Effect of UV curing time on physical and electrical properties and reliability of low dielectric constant materials

    SciTech Connect

    Kao, Kai-Chieh; Cheng, Yi-Lung; Chang, Wei-Yuan; Chang, Yu-Min; Leu, Jihperng

    2014-11-01

    This study comprehensively investigates the effect of ultraviolet (UV) curing time on the physical, electrical, and reliability characteristics of porous low-k materials. Following UV irradiation for various periods, the depth profiles of the chemical composition in the low-k dielectrics were homogeneous. Initially, the UV curing process preferentially removed porogen-related CH{sub x} groups and then modified Si-CH{sub 3} and cage Si-O bonds to form network Si-O bonds. The lowest dielectric constant (k value) was thus obtained at a UV curing time of 300 s. Additionally, UV irradiation made porogen-based low-k materials hydrophobic and to an extent that increased with UV curing time. With a short curing time (<300 s), porogen was not completely removed and the residues degraded reliability performance. A long curing time (>300 s) was associated with improved mechanical strength, electrical performance, and reliability of the low-k materials, but none of these increased linearly with UV curing time. Therefore, UV curing is necessary, but the process time must be optimized for porous low-k materials on back-end of line integration in 45 nm or below technology nodes.

  18. Enhanced Dielectric Constant for Efficient Electromagnetic Shielding Based on Carbon-Nanotube-Added Styrene Acrylic Emulsion Based Composite

    PubMed Central

    2010-01-01

    An efficient electromagnetic shielding composite based on multiwalled carbon nanotubes (MWCNTs)-filled styrene acrylic emulsion-based polymer has been prepared in a water-based system. The MWCNTs were demonstrated to have an effect on the dielectric constants, which effectively enhance electromagnetic shielding efficiency (SE) of the composites. A low conductivity threshold of 0.23 wt% can be obtained. An EMI SE of ~28 dB was achieved for 20 wt% MWCNTs. The AC conductivity (σac) of the composites, deduced from imaginary permittivity, was used to estimate the SE of the composites in X band (8.2–12.4 GHz), showing a good agreement with the measured results. PMID:20596498

  19. Enhanced dielectric constant for efficient electromagnetic shielding based on carbon-nanotube-added styrene acrylic emulsion based composite.

    PubMed

    Li, Yong; Chen, Changxin; Li, Jiang-Tao; Zhang, Song; Ni, Yuwei; Cai, Seng; Huang, Jie

    2010-01-01

    An efficient electromagnetic shielding composite based on multiwalled carbon nanotubes (MWCNTs)-filled styrene acrylic emulsion-based polymer has been prepared in a water-based system. The MWCNTs were demonstrated to have an effect on the dielectric constants, which effectively enhance electromagnetic shielding efficiency (SE) of the composites. A low conductivity threshold of 0.23 wt% can be obtained. An EMI SE of ~28 dB was achieved for 20 wt% MWCNTs. The AC conductivity (σac) of the composites, deduced from imaginary permittivity, was used to estimate the SE of the composites in X band (8.2-12.4 GHz), showing a good agreement with the measured results. PMID:20596498

  20. Mid-IR high-index dielectric Huygens metasurfaces

    NASA Astrophysics Data System (ADS)

    Ding, Jun; Zhang, Li; Ren, Han; Zhou, Mi; Lin, Yuankun; Hu, Juejun; Zhang, Hualiang

    2016-03-01

    In this paper, we proposed highly efficient all-dielectric Huygens' metasurfaces working at mid-IR frequencies. The meta-atom of the designed Huygens' metasurface is a cubic dielectric resonator or its variety, which is made from PbTe that possesses a high refractive index of around 5 at mid-IR frequencies. By overlapping spectrally both the magnetic and electric dipole modes of the high-index dielectric resonators, a full phase coverage of 2π and an equal-magnitude transmission could be achieved, which are essential conditions for realizing a metasurface. Two Huygens' metasurfaces for beam bending are designed with a phase change between two consecutive meta-atoms of π/4 and π/3, respectively. The simulation results agree well with the design theory.

  1. Flexible high-temperature dielectric materials from polymer nanocomposites

    NASA Astrophysics Data System (ADS)

    Li, Qi; Chen, Lei; Gadinski, Matthew R.; Zhang, Shihai; Zhang, Guangzu; Li, Haoyu; Haque, Aman; Chen, Long-Qing; Jackson, Tom; Wang, Qing

    2015-07-01

    Dielectric materials, which store energy electrostatically, are ubiquitous in advanced electronics and electric power systems. Compared to their ceramic counterparts, polymer dielectrics have higher breakdown strengths and greater reliability, are scalable, lightweight and can be shaped into intricate configurations, and are therefore an ideal choice for many power electronics, power conditioning, and pulsed power applications. However, polymer dielectrics are limited to relatively low working temperatures, and thus fail to meet the rising demand for electricity under the extreme conditions present in applications such as hybrid and electric vehicles, aerospace power electronics, and underground oil and gas exploration. Here we describe crosslinked polymer nanocomposites that contain boron nitride nanosheets, the dielectric properties of which are stable over a broad temperature and frequency range. The nanocomposites have outstanding high-voltage capacitive energy storage capabilities at record temperatures (a Weibull breakdown strength of 403 megavolts per metre and a discharged energy density of 1.8 joules per cubic centimetre at 250 degrees Celsius). Their electrical conduction is several orders of magnitude lower than that of existing polymers and their high operating temperatures are attributed to greatly improved thermal conductivity, owing to the presence of the boron nitride nanosheets, which improve heat dissipation compared to pristine polymers (which are inherently susceptible to thermal runaway). Moreover, the polymer nanocomposites are lightweight, photopatternable and mechanically flexible, and have been demonstrated to preserve excellent dielectric and capacitive performance after intensive bending cycles. These findings enable broader applications of organic materials in high-temperature electronics and energy storage devices.

  2. Flexible high-temperature dielectric materials from polymer nanocomposites.

    PubMed

    Li, Qi; Chen, Lei; Gadinski, Matthew R; Zhang, Shihai; Zhang, Guangzu; Li, Haoyu; Haque, Aman; Chen, Long-Qing; Jackson, Tom; Wang, Qing

    2015-07-30

    Dielectric materials, which store energy electrostatically, are ubiquitous in advanced electronics and electric power systems. Compared to their ceramic counterparts, polymer dielectrics have higher breakdown strengths and greater reliability, are scalable, lightweight and can be shaped into intricate configurations, and are therefore an ideal choice for many power electronics, power conditioning, and pulsed power applications. However, polymer dielectrics are limited to relatively low working temperatures, and thus fail to meet the rising demand for electricity under the extreme conditions present in applications such as hybrid and electric vehicles, aerospace power electronics, and underground oil and gas exploration. Here we describe crosslinked polymer nanocomposites that contain boron nitride nanosheets, the dielectric properties of which are stable over a broad temperature and frequency range. The nanocomposites have outstanding high-voltage capacitive energy storage capabilities at record temperatures (a Weibull breakdown strength of 403 megavolts per metre and a discharged energy density of 1.8 joules per cubic centimetre at 250 degrees Celsius). Their electrical conduction is several orders of magnitude lower than that of existing polymers and their high operating temperatures are attributed to greatly improved thermal conductivity, owing to the presence of the boron nitride nanosheets, which improve heat dissipation compared to pristine polymers (which are inherently susceptible to thermal runaway). Moreover, the polymer nanocomposites are lightweight, photopatternable and mechanically flexible, and have been demonstrated to preserve excellent dielectric and capacitive performance after intensive bending cycles. These findings enable broader applications of organic materials in high-temperature electronics and energy storage devices. PMID:26223625

  3. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

    PubMed

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  4. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

    PubMed Central

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  5. Ultra-capacitor flexible films with tailored dielectric constants using electric field assisted assembly of nanoparticles

    NASA Astrophysics Data System (ADS)

    Batra, Saurabh; Cakmak, Miko

    2015-12-01

    In this study, the chaining and preferential alignment of barium titanate nanoparticles (100 nm) through the thickness direction of a polymer matrix in the presence of an electric field is shown. Application of an AC electric field in a well-dispersed solution leads to the formation of chains of nanoparticles in discrete rows oriented with their primary axis in the E-field direction due to dielectrophoresis. The change in the orientation of these chains was quantified through statistical analysis of SEM images and was found to be dependent on E-field, frequency and viscosity. When a DC field is applied a distinct layer consisting of dense particles was observed with micro-computed tomography. These studies show that the increase in DC voltage leads to increase in the thickness of the particle rich layer along with the packing density also increasing. Increasing the mutual interactions between particles due to the formation of particle chains in the ``Z''-direction decreases the critical percolation concentration above which substantial enhancement of properties occurs. This manufacturing method therefore shows promise to lower the cost of the products for a range of applications including capacitors by either enhancing the dielectric properties for a given concentration or reduces the concentration of nanoparticles needed for a given property.

  6. Ultra-capacitor flexible films with tailored dielectric constants using electric field assisted assembly of nanoparticles.

    PubMed

    Batra, Saurabh; Cakmak, Miko

    2015-12-28

    In this study, the chaining and preferential alignment of barium titanate nanoparticles (100 nm) through the thickness direction of a polymer matrix in the presence of an electric field is shown. Application of an AC electric field in a well-dispersed solution leads to the formation of chains of nanoparticles in discrete rows oriented with their primary axis in the E-field direction due to dielectrophoresis. The change in the orientation of these chains was quantified through statistical analysis of SEM images and was found to be dependent on E-field, frequency and viscosity. When a DC field is applied a distinct layer consisting of dense particles was observed with micro-computed tomography. These studies show that the increase in DC voltage leads to increase in the thickness of the particle rich layer along with the packing density also increasing. Increasing the mutual interactions between particles due to the formation of particle chains in the "Z"-direction decreases the critical percolation concentration above which substantial enhancement of properties occurs. This manufacturing method therefore shows promise to lower the cost of the products for a range of applications including capacitors by either enhancing the dielectric properties for a given concentration or reduces the concentration of nanoparticles needed for a given property. PMID:26593234

  7. High thermal conductivity lossy dielectric using co-densified multilayer configuration

    DOEpatents

    Tiegs, Terry N.; Kiggans, Jr., James O.

    2003-06-17

    Systems and methods are described for loss dielectrics. A method of manufacturing a lossy dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer and then densifying together. The systems and methods provide advantages because the lossy dielectrics are less costly and more environmentally friendly than the available alternatives.

  8. Impact of the spacer dielectric constant on parasitic RC and design guidelines to optimize DC/AC performance in 10-nm-node Si-nanowire FETs

    NASA Astrophysics Data System (ADS)

    Hong, Jae-Ho; Lee, Sang-Hyun; Kim, Ye-Ram; Jeong, Eui-Young; Yoon, Jun-Sik; Lee, Jeong-Soo; Baek, Rock-Hyun; Jeong, Yoon-Ha

    2015-04-01

    In this paper, we propose an optimized design for Si-nanowire FETs in terms of spacer dielectric constant (κsp), extension length (LEXT), nanowire diameter (Dnw), and operation voltage (VDD) for the sub-10 nm technology node. Using well-calibrated TCAD simulations and analytic RC models, we have quantitatively evaluated geometry-dependent parasitic series resistances (RSD) and capacitances (Cpara). Compared with low-κ spacers, high-κ spacers exhibit a higher on/off-current ratio with a lower RSD, but show severe degradation in their AC performance owing to a higher Cpara. Considering the trade-off between RSD and Cpara, optimal geometry-dependent κsp values at various supply voltages (VDD) are determined using gate delay (CV/I) and current-gain cutoff frequency (fT). We found that as LEXT and VDD decrease and Dnw increases, the optimal κsp value shifts from the high-κ to low-κ regime.

  9. Simulations of dielectric Cerenkov masers at moderate to high power

    SciTech Connect

    Mardahl, P.; Verboncoeur, J.P.; Birdsall, C.K.

    1996-12-31

    A dielectric Cerenkov maser amplifier is simulated with XOOPIC and results are compared to experiment and theory. The device examined is azimuthally symmetric with a circular crossection. The dispersion has been obtained and agrees well with the experiment. The efficiency, power and gain will be compared for the parameters of the Dartmouth experiment. Other configurations of interest include devices of higher beam energy and current such as the experiment of Main. This device generated a peak microwave power of 280 MW for 3ns before experiencing RF quenching, possibly due to the formation of a plasma at the wall, which they intend to investigate further. The authors also examine various techniques of reducing the field stresses which may cause breakdown in this class of device. Also, increasing microwave power and efficiency via grading the dielectric constant to match the beam velocity will be examined.

  10. Microclimate, Water Potential, Transpiration, and Bole Dielectric Constant of Coniferous and Deciduous Tree Species in the Continental Boreal Ecotone of Central Alaska

    NASA Technical Reports Server (NTRS)

    Zimmermann, R.; McDonald, K.; Way, J.; Oren, R.

    1994-01-01

    Tree canopy microclimate, xylem water flux and xylem dielectric constant have been monitored in situ since June 1993 in two adjacent natural forest stands in central Alaska. The deciduous stand represents a mature balsam poplar site on the Tanana River floodplain, while the coniferous stand consists of mature white spruce with some black spruce mixed in. During solstice in June and later in summer, diurnal changes of xylem water potential were measured to investigate the occurrence and magnitude of tree transpiration and dielectric constant changes in stems.

  11. Understanding Nonlinear Dielectric Properties in a Biaxially Oriented Poly(vinylidene fluoride) Film at Both Low and High Electric Fields.

    PubMed

    Li, Yue; Ho, Janet; Wang, Jianchuan; Li, Zhong-Ming; Zhong, Gan-Ji; Zhu, Lei

    2016-01-13

    Understanding nonlinear dielectric behavior in polar polymers is crucial to their potential application as next generation high energy density and low loss dielectrics. In this work, we studied nonlinear dielectric properties of a biaxially oriented poly(vinylidene fluoride) (BOPVDF) film under both low and high electric fields. For fundamental nonlinear dielectric constants at low fields (<30 MV/m), Novocontrol high-voltage broadband dielectric spectroscopy (HVBDS) was accurate enough to measure up to the third harmonics. It was observed that the low-field dielectric nonlinearity for the BOPVDF disappeared above 10 Hz at room temperature, suggesting that the low-field dielectric nonlinearity originated from ionic migration of impurity ions rather than dipolar relaxation of the amorphous segments. Above the coercive field (EC ≈ 70 MV/m), bipolar electric displacement-electric field (D-E) loop tests were used to extract the nonlinear behavior for pure PVDF crystals, which had a clear origin of ferroelectric switching of polar crystalline dipoles and domains and nonpolar-to-polar (α → δ → β) phase transformations. By using HVBDS, it was observed that the ferroelectric switching of polar crystalline dipoles and domains in BOPVDF above the EC always took place between 20 and 500 Hz regardless of a broad range of temperature from -30 to 100 °C. This behavior was drastically different from that of the amorphous PVDF dipoles, which had a strong dependence on frequency over orders of magnitude. PMID:26698912

  12. Significantly elevated dielectric permittivity of Si-based semiconductor/polymer 2-2 composites induced by high polarity polymers

    NASA Astrophysics Data System (ADS)

    Feng, Yefeng; Gong, Honghong; Xie, Yunchuan; Wei, Xiaoyong; Zhang, Zhicheng

    2016-02-01

    To disclose the essential influence of polymer polarity on dielectric properties of polymer composites filled with semiconductive fillers, a series of Si-based semiconductor/polymer 2-2 composites in a series model was fabricated. The dielectric permittivity of composites is highly dependant on the polarity of polymer layers as well as the electron mobility in Si-based semiconductive sheets. The huge dielectric permittivity achieved in Si-based semiconductive sheets after being coated with high polarity polymer layers is inferred to originate from the strong induction of high polarity polymers. The increased mobility of the electrons in Si-based semiconductive sheets coated by high polarity polymer layers should be responsible for the significantly enhanced dielectric properties of composites. This could be facilely achieved by either increasing the polarity of polymer layers or reducing the percolative electric field of Si-based semiconductive sheets. The most promising 2-2 dielectric composite was found to be made of α-SiC with strong electron mobility and poly(vinyl alcohol) (PVA) with high polarity, and its highest permittivity was obtained as 372 at 100 Hz although the permittivity of α-SiC and PVA is 3-5 and 15, respectively. This work may help in the fabrication of high dielectric constant (high-k) composites by tailoring the induction effect of high polarity polymers to semiconductors.

  13. Charge trapping properties of alternative high-kappa dielectrics in MOS devices

    NASA Astrophysics Data System (ADS)

    Zhou, Xing

    High-kappa dielectrics are promising candidates to replace SiO 2 in advanced integrated circuits in future space systems. Studies of the effects of ionizing radiation and bias-temperature stress (BTS) on high-kappa dielectrics were performed. Trapped charge densities are evaluated as functions of temperature and stress time. Prior radiation exposure enhances BTS-induced degradation in these devices. Worst-case responses in combined effects are positive (or zero) bias irradiation followed by NBTS for HfO2-based devices. Degradation due to oxide or interface trap-charge changes in magnitude with the bias polarity during switched-bias annealing either after irradiation or constant voltage stress (CVS). This demonstrates that metastable electron trapping (dominant during post-rad annealing) and hydrogen transport and reactions (dominant during post-CVS annealing) in the near-interfacial dielectric layers play significant roles in the defect formation process. Additional defect growth with time was observed as a result of additional charge injection through the gate stacks during the annealing process. These results provide insights into fundamental trapping properties of high-kappa dielectrics and can be used to help predict long-term reliability of these devices.

  14. A high-efficiency relativistic magnetron with the filled dielectric

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Yu; Fan, Yu-Wei; Shi, Di-fu; Shu, Ting

    2016-07-01

    Relativistic magnetron (RM) is a popular high power microwave device. Filling the resonant cavities with the low-loss dielectric is a well-proven technology that improves the performance of RM. In order to enhance the power efficiency, a dielectric-filled relativistic magnetron (DFRM) is presented and investigated numerically with KARAT code in this paper. The simulation results indicate that the maximum power efficiency is enhanced from 50.0% in the conventional RM to 56.0% in the DFRM when the applied voltage and the magnetic field are 280 kV and 0.5 T, respectively. Besides, the simulation results are analyzed and discussed.

  15. Dielectric abnormities in BaTi{sub 0.9}(Ni{sub 1/2}W{sub 1/2}){sub 0.1}O{sub 3} giant dielectric constant ceramics

    SciTech Connect

    Zhao Fei; Yue Zhenxing; Pei Jing; Yang Donghai; Gui Zhilun; Li Longtu

    2007-07-30

    BaTi{sub 0.9}(Ni{sub 1/2}W{sub 1/2}){sub 0.1}O{sub 3} ceramics were fabricated and their dielectric properties were investigated. With the sintering temperature increasing from 1250 to 1280 deg. C, the grain size abruptly increases from 1-2 to 20-40 {mu}m, accompanying significant changes in dielectric response. The samples with larger grains exhibit giant dielectric constant characteristics, which are considered to be mainly attributed to the domain boundary effect. The activation energies of the dielectric relaxation E{sub relax}=0.325 eV reveal the existence of microdomains in larger grains. The ac conductivity results also give the evidence of the domain boundary effect in the present ceramics.

  16. Interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates

    NASA Astrophysics Data System (ADS)

    He, Gang; Chen, Xiaoshuang; Sun, Zhaoqi

    2013-03-01

    Recently, III-V materials have been extensively studied as potential candidates for post-Si complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle to implement III-V compound semiconductors for CMOS applications is the lack of high quality and thermodynamically stable insulators with low interface trap densities. Due to their excellent thermal stability and relatively high dielectric constants, Hf-based high-k gate dielectrics have been recently highlighted as the most promising high-k dielectrics for III-V-based devices. This paper provides an overview of interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates. We begin with a survey of methods developed for generating Hf-based high-k gate dielectrics. To address the impact of these hafnium based materials, their interfaces with GaAs as well as a variety of semiconductors are discussed. After that, the integration issues are highlighted, including the development of high-k deposition without Fermi level pinning, surface passivation and interface state, and integration of novel device structure with Si technology. Finally, we conclude this review with the perspectives and outlook on the future developments in this area. This review explores the possible influences of research breakthroughs of Hf-based gate dielectrics on the current and future applications for nano-MOSFET devices.

  17. Measurement of the dielectric properties of high-purity sapphire at 1.865 GHZ from 2-10 Kelvin

    SciTech Connect

    N. Pogue, P. McIntyre, Akhdiyor Sattarov, Charles Reece

    2012-06-01

    A dielectric test cavity was designed and tested to measure the microwave dielectric properties of ultrapure sapphire at cryogenic temperatures. Measurements were performed by placing a large cylindrical crystal of sapphire in a Nb superconducting cavity operating in the TE01 mode at 1.865 GHz. The dielectric constant, heat capacity, and loss tangent were all calculated using experimental data and RF modeling software. The motivation for these measurements was to determine if such a sapphire could be used as a dielectric lens to focus the magnetic field onto a sample wafer in a high field wafer test cavity. The measured properties have been used to finalize the design of the wafer test cavity.

  18. Dielectric constant extraction of graphene nanostructured on SiC substrates from spectroscopy ellipsometry measurement using Gauss-Newton inversion method

    NASA Astrophysics Data System (ADS)

    Maulina, Hervin; Santoso, Iman; Subama, Emmistasega; Nurwantoro, Pekik; Abraha, Kamsul; Rusydi, Andrivo

    2016-04-01

    The extraction of the dielectric constant of nanostructured graphene on SiC substrates from spectroscopy ellipsometry measurement using the Gauss-Newton inversion (GNI) method has been done. This study aims to calculate the dielectric constant and refractive index of graphene by extracting the value of ψ and Δ from the spectroscopy ellipsometry measurement using GNI method and comparing them with previous result which was extracted using Drude-Lorentz (DL) model. The results show that GNI method can be used to calculate the dielectric constant and refractive index of nanostructured graphene on SiC substratesmore faster as compared to DL model. Moreover, the imaginary part of the dielectric constant values and coefficient of extinction drastically increases at 4.5 eV similar to that of extracted using known DL fitting. The increase is known due to the process of interband transition and the interaction between the electrons and electron-hole at M-points in the Brillouin zone of graphene.

  19. Recent Progress on Ferroelectric Polymer-Based Nanocomposites for High Energy Density Capacitors: Synthesis, Dielectric Properties, and Future Aspects.

    PubMed

    Prateek; Thakur, Vijay Kumar; Gupta, Raju Kumar

    2016-04-13

    Dielectric polymer nanocomposites are rapidly emerging as novel materials for a number of advanced engineering applications. In this Review, we present a comprehensive review of the use of ferroelectric polymers, especially PVDF and PVDF-based copolymers/blends as potential components in dielectric nanocomposite materials for high energy density capacitor applications. Various parameters like dielectric constant, dielectric loss, breakdown strength, energy density, and flexibility of the polymer nanocomposites have been thoroughly investigated. Fillers with different shapes have been found to cause significant variation in the physical and electrical properties. Generally, one-dimensional and two-dimensional nanofillers with large aspect ratios provide enhanced flexibility versus zero-dimensional fillers. Surface modification of nanomaterials as well as polymers adds flavor to the dielectric properties of the resulting nanocomposites. Nowadays, three-phase nanocomposites with either combination of fillers or polymer matrix help in further improving the dielectric properties as compared to two-phase nanocomposites. Recent research has been focused on altering the dielectric properties of different materials while also maintaining their superior flexibility. Flexible polymer nanocomposites are the best candidates for application in various fields. However, certain challenges still present, which can be solved only by extensive research in this field. PMID:27040315

  20. Metal–Dielectric Waveguides for High Efficiency Fluorescence Imaging

    PubMed Central

    Zhu, Liangfu; Zhang, Douguo; Wang, Ruxue; Wang, Pei; Ming, Hai; Badugu, Ramachandram; Du, Luping; Yuan, Xiaocong; Lakowicz, Joseph R.

    2015-01-01

    We demonstrate that Metal–Dielectric Waveguide structures (MDWs) with high efficiency of fluorescence coupling can be suitable as substrates for fluorescence imaging. This hybrid MDWs consists of a continuous metal film and a dielectric top layer. The optical modes sustaining inside this structure can be excited with a high numerical aperture (N.A) objective, and then focused into a virtual optical probe with high intensity, leading to efficient excitation of fluorophores deposited on top of the MDWs. The emitted fluorophores couple with the optical modes thus enabling the directional emission, which is verified by the back focal plane (BFP) imaging. These unique properties of MDWs have been adopted in a scanning laser confocal optical microscopy, and show the merit of high efficiency fluorescence imaging. MDWs can be easily fabricated by vapor deposition and/or spin coating, the silica surface of the MDWs is suitable for biomolecule tethering, and will offer new opportunities for cell biology and biophysics research. PMID:26525494

  1. Dielectric characterization of high-performance spaceflight materials

    NASA Astrophysics Data System (ADS)

    Kleppe, Nathan Alan

    As commercial space travel increases, the need for reliable structural health monitoring to predict possible weaknesses or failures of structural materials also increases. Monitoring of polymer-based materials may be achieved through the use of dielectric spectroscopy by comparing permittivity or conductivity measurements performed on a sample in use to that of a pristine sample. Changes in these measured values or of the relaxation frequencies, if present, can indicate chemical or physical changes occurring within the material and the possible need for maintenance/replacement. In this work, we established indicative trends that occur in the dielectric spectra during accelerated aging of various high-performance polymeric materials (EVOH, PEEK, PPS, and UHMWPE). Uses for these materials range from electrical insulation and protective coatings to windows and air- or space-craft parts that may be subject to environmental damage over long-term operation. Accelerated thermal aging and ultraviolet/water-spray cyclic aging were performed in order to investigate the degradation of the aforementioned material. The Havriliak-Negami model was used in the analysis of the measured dielectric spectra in order to obtain the characteristic fit parameters from which aging-related trends were identified. With reference to the literature and from measured FTIR spectra, observations were connected to the underlying mechanisms causing the dielectric relaxations.

  2. Dielectric properties of high-density-plasma fluorinated-silicate glass by doping nitrogen

    SciTech Connect

    Wei, B. J.; Cheng, Y. L.; Wang, Y. L.; Lu, F. H.; Shih, H. C.

    2008-05-15

    Nitrogen-doped fluorinated-silicate-glass (N-FSG) films were prepared by adding N{sub 2} gas to the SiH{sub 4}/SiF{sub 4}/O{sub 2}/Ar gas mixtures using high-density-plasma (HDP) chemical vapor deposition method. When N{sub 2} is increasingly added, the fluorine concentration of the films increases and the dielectric constant decreases from 3.8 to 3.4. In addition, better gap-filling ability is obtained by adding N{sub 2} due to a lowered deposition/(sputtering+etching) (D/S+E) ratio. Moreover, these films were stabilized by a decreased change in dielectric constant after thermal treatment; indicating a significant improvement in the thermal resistivity of the films. It is proposed that the improvement of stability is correlated with the reduction of unstable fluorine bonds in the N-FSG films. Furthermore, the thermal stability of the N-FSG films was also identified by Al wiring delamination check. After annealing, the blister was observed only in non-N{sub 2} FSG film with 5.5% Si-F concentration, while no blisters or delamination were observed when N{sub 2} is introduced into the FSG process. Therefore, the N-FSG film, deposited by HDP-chemical vapor deposition, was a good candidate for the interconnect dielectric application.

  3. Dry Etching of Organic Low Dielectric Constant Film without Etch Stop Layer

    NASA Astrophysics Data System (ADS)

    Mizumura, Michinobu; Fukuyama, Ryouji; Oomoto, Yutaka

    2002-04-01

    We investigated the trade-off between the increase of etch rate and the control of subtrenching in H2/N2 etching of a SiLK film (SiLK is a trademark of The Dow Chemical Company) without an etch stop layer for a Cu/low-k dual damascene structure. Based on our results, it is clear that the re-incident distribution of the reaction product influenced the mechanism of subtrenching strongly. As H etchant had the ability to remove the reaction product efficiently, we have successfully obtained good etching performance (an average etch rate of 128 nm/min, no subtrenching, and an etch rate uniformity of 8.9% within a 200 mm wafer) using an H2 high-flow-rate process in order to increase the amount of H etchant.

  4. Noncontact conductivity and dielectric measurement for high throughput roll-to-roll nanomanufacturing

    PubMed Central

    Orloff, Nathan D.; Long, Christian J.; Obrzut, Jan; Maillaud, Laurent; Mirri, Francesca; Kole, Thomas P.; McMichael, Robert D.; Pasquali, Matteo; Stranick, Stephan J.; Alexander Liddle, J.

    2015-01-01

    Advances in roll-to-roll processing of graphene and carbon nanotubes have at last led to the continuous production of high-quality coatings and filaments, ushering in a wave of applications for flexible and wearable electronics, woven fabrics, and wires. These applications often require specific electrical properties, and hence precise control over material micro- and nanostructure. While such control can be achieved, in principle, by closed-loop processing methods, there are relatively few noncontact and nondestructive options for quantifying the electrical properties of materials on a moving web at the speed required in modern nanomanufacturing. Here, we demonstrate a noncontact microwave method for measuring the dielectric constant and conductivity (or geometry for samples of known dielectric properties) of materials in a millisecond. Such measurement times are compatible with current and future industrial needs, enabling real-time materials characterization and in-line control of processing variables without disrupting production. PMID:26592441

  5. Noncontact conductivity and dielectric measurement for high throughput roll-to-roll nanomanufacturing.

    PubMed

    Orloff, Nathan D; Long, Christian J; Obrzut, Jan; Maillaud, Laurent; Mirri, Francesca; Kole, Thomas P; McMichael, Robert D; Pasquali, Matteo; Stranick, Stephan J; Liddle, J Alexander

    2015-01-01

    Advances in roll-to-roll processing of graphene and carbon nanotubes have at last led to the continuous production of high-quality coatings and filaments, ushering in a wave of applications for flexible and wearable electronics, woven fabrics, and wires. These applications often require specific electrical properties, and hence precise control over material micro- and nanostructure. While such control can be achieved, in principle, by closed-loop processing methods, there are relatively few noncontact and nondestructive options for quantifying the electrical properties of materials on a moving web at the speed required in modern nanomanufacturing. Here, we demonstrate a noncontact microwave method for measuring the dielectric constant and conductivity (or geometry for samples of known dielectric properties) of materials in a millisecond. Such measurement times are compatible with current and future industrial needs, enabling real-time materials characterization and in-line control of processing variables without disrupting production. PMID:26592441

  6. Noncontact conductivity and dielectric measurement for high throughput roll-to-roll nanomanufacturing

    NASA Astrophysics Data System (ADS)

    Orloff, Nathan D.; Long, Christian J.; Obrzut, Jan; Maillaud, Laurent; Mirri, Francesca; Kole, Thomas P.; McMichael, Robert D.; Pasquali, Matteo; Stranick, Stephan J.; Alexander Liddle, J.

    2015-11-01

    Advances in roll-to-roll processing of graphene and carbon nanotubes have at last led to the continuous production of high-quality coatings and filaments, ushering in a wave of applications for flexible and wearable electronics, woven fabrics, and wires. These applications often require specific electrical properties, and hence precise control over material micro- and nanostructure. While such control can be achieved, in principle, by closed-loop processing methods, there are relatively few noncontact and nondestructive options for quantifying the electrical properties of materials on a moving web at the speed required in modern nanomanufacturing. Here, we demonstrate a noncontact microwave method for measuring the dielectric constant and conductivity (or geometry for samples of known dielectric properties) of materials in a millisecond. Such measurement times are compatible with current and future industrial needs, enabling real-time materials characterization and in-line control of processing variables without disrupting production.

  7. High-Tc superconducting rectangular microstrip patch covered with a dielectric layer

    NASA Astrophysics Data System (ADS)

    Bedra, Sami; Fortaki, Tarek

    2016-05-01

    This paper presents a full-wave method to calculate the resonant characteristics of rectangular microstrip antenna with and without dielectric cover, to explain the difference of performance with temperature between superconducting and normal conducting antenna. Especially the characteristics of high temperature superconducting (HTS) antenna were almost ideal around the critical temperature (Tc). The dyadic Green's functions of the considered structure are efficiently determined in the vector Fourier transform domain. The effect of the superconductivity of the patch is taken into account using the concept of the complex resistive boundary condition. The computed results are found to be in good agreement with results obtained using other methods. Also, the effects of the superstrate on the resonant frequency and bandwidth of rectangular microstrip patch in a substrate-superstrate configuration are investigated. This type of configuration can be used for wider bandwidth by proper selection of superstrate thickness and its dielectric constants.

  8. Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Frederick, J. C.; Kim, T. H.; Maeng, W.; Brewer, A. A.; Podkaminer, J. P.; Saenrang, W.; Vaithyanathan, V.; Li, F.; Chen, L.-Q.; Schlom, D. G.; Trolier-McKinstry, S.; Rzchowski, M. S.; Eom, C. B.

    2016-03-01

    The dielectric phase transition behavior of imprinted lead magnesium niobate-lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling.

  9. High pressure dielectric studies on the structural and orientational glass.

    PubMed

    Kaminska, E; Tarnacka, M; Jurkiewicz, K; Kaminski, K; Paluch, M

    2016-02-01

    High pressure dielectric studies on the H-bonded liquid D-glucose and Orientationally Disordered Crystal (ODIC) 1,6-anhydro-D-glucose (levoglucosan) were carried out. It was shown that in both compounds, the structural relaxation is weakly sensitive to compression. It is well reflected in the low pressure coefficient of the glass transition and orientational glass transition temperatures which is equal to 60 K/GPa for both D-glucose and 1,6-anhydro-D-glucose. Although it should be noted that ∂Tg(0)/∂p evaluated for the latter compound seems to be enormously high with respect to other systems forming ODIC phase. We also found that the shape of the α-loss peak stays constant for the given relaxation time independently on the thermodynamic condition. Consequently, the Time Temperature Pressure (TTP) rule is satisfied. This experimental finding seems to be quite intriguing since the TTP rule was shown to work well in the van der Waals liquids, while in the strongly associating compounds, it is very often violated. We have also demonstrated that the sensitivity of the structural relaxation process to the temperature change measured by the steepness index (mp) drops with pressure. Interestingly, this change is much more significant in the case of D-glucose with respect to levoglucosan, where the fragility changes only slightly with compression. Finally, kinetics of ODIC-crystal phase transition was studied at high compression. It is worth mentioning that in the recent paper, Tombari and Johari [J. Chem. Phys. 142, 104501 (2015)] have shown that ODIC phase in 1,6-anhydro-D-glucose is stable in the wide range of temperatures and there is no tendency to form more ordered phase at ambient pressure. On the other hand, our isochronal measurements performed at varying thermodynamic conditions indicated unquestionably that the application of pressure favors solid (ODIC)-solid (crystal) transition in 1,6-anhydro-D-glucose. This result mimics the impact of pressure on the

  10. High pressure dielectric studies on the structural and orientational glass

    NASA Astrophysics Data System (ADS)

    Kaminska, E.; Tarnacka, M.; Jurkiewicz, K.; Kaminski, K.; Paluch, M.

    2016-02-01

    High pressure dielectric studies on the H-bonded liquid d-glucose and Orientationally Disordered Crystal (ODIC) 1,6-anhydro-d-glucose (levoglucosan) were carried out. It was shown that in both compounds, the structural relaxation is weakly sensitive to compression. It is well reflected in the low pressure coefficient of the glass transition and orientational glass transition temperatures which is equal to 60 K/GPa for both d-glucose and 1,6-anhydro-d-glucose. Although it should be noted that ∂ Tg 0 / ∂ p evaluated for the latter compound seems to be enormously high with respect to other systems forming ODIC phase. We also found that the shape of the α-loss peak stays constant for the given relaxation time independently on the thermodynamic condition. Consequently, the Time Temperature Pressure (TTP) rule is satisfied. This experimental finding seems to be quite intriguing since the TTP rule was shown to work well in the van der Waals liquids, while in the strongly associating compounds, it is very often violated. We have also demonstrated that the sensitivity of the structural relaxation process to the temperature change measured by the steepness index (mp) drops with pressure. Interestingly, this change is much more significant in the case of d-glucose with respect to levoglucosan, where the fragility changes only slightly with compression. Finally, kinetics of ODIC-crystal phase transition was studied at high compression. It is worth mentioning that in the recent paper, Tombari and Johari [J. Chem. Phys. 142, 104501 (2015)] have shown that ODIC phase in 1,6-anhydro-d-glucose is stable in the wide range of temperatures and there is no tendency to form more ordered phase at ambient pressure. On the other hand, our isochronal measurements performed at varying thermodynamic conditions indicated unquestionably that the application of pressure favors solid (ODIC)-solid (crystal) transition in 1,6-anhydro-d-glucose. This result mimics the impact of pressure on the

  11. Controlled and enhanced dielectric properties of high-titanium containing LixTi0.1Ni1-xO via chemical composition-tailoring

    NASA Astrophysics Data System (ADS)

    Puli, Venkata Sreenivas; Picchini, Randall; Orozco, Cristian; Ramana, C. V.

    2016-04-01

    Tuning the dielectric properties via composition-tailoring is demonstrated for variable-lithium, constant-titanium co-doped nickel oxide (LixTi0.1Ni1-xO; x = 0.05-0.30; referred to LTNO). The effect of variable Li-content on the structure and dielectric properties of LTNO is investigated. X-ray diffraction studies confirm the formation of a cubic NiO phase in LTNO for x = 0.05-0.30. However, lattice parameter reduction was evident with increasing Li-content. Composition-driven giant dielectric constant (104-105) was observed for a higher lithium content (x = 0.15-0.30) leading to realization of LTNO ceramics. The origin of the high dielectric constant observed in these low density LTNO ceramics is attributed to the Maxwell-Wagner polarization mechanism.

  12. Development of Dielectric-Based High Gradient Accelerating Structures

    SciTech Connect

    Jing, C.; Gai, W.; Konecny, R.; Power, J.; Liu, W.; Gold, S. H.; Kinkead, A. K.; Kanareykin, A.; Kazakov, S.

    2006-11-27

    High gradient accelerating structures using dielectric-lined circular waveguides have been developed for a number of years at Argonne National Laboratory. In this article, we first report the experimental results of high power rf testing on the quartz based Dielectric-Loaded Accelerating (DLA) structure carried out on Feb. 2006 at the Naval Research Laboratory. The motivation for this experiment is to test the multipactor effect on different materials under high power and high vacuum condition. Up to 12 MW pulsed rf went through the tube without breakdown. Multipactor appeared during the experiment but with different features compared to other materials like alumina. Photomultiplier Tube (PMT) measurements were introduced into the experiment for the first time to observe the light emission time and intensity. In the second part of this paper, ways to achieve higher gradient for DLA structures are proposed: 1) smaller ID and longitudinal gap free DLA structures to reduce multipactor and obtain higher gradient; 2) new coaxial type coupler to avoid dielectric gap and improve impedance matching; 3) double layered DLA structure to reduce rf loss and enhance shunt impedance as well.

  13. High Stability Pentacene Transistors Using Polymeric Dielectric Surface Modifier.

    PubMed

    Wang, Xiaohong; Lin, Guangqing; Li, Peng; Lv, Guoqiang; Qiu, Longzhen; Ding, Yunsheng

    2015-08-01

    1,6-bis(trichlorosilyl)hexane (C6Cl), polystyrene (PS), and cross-linked polystyrene (CPS) were investigated as gate dielectric modified layers for high performance organic transistors. The influence of the surface energy, roughness and morphology on the charge transport of the organic thin-film transistors (OTFTs) was investigated. The surface energy and roughness both affect the grain size of the pentacene films which will control the charge carrier mobility of the devices. Pentacene thin-film transistors fabricated on the CPS modified dielectric layers exhibited charge carrier mobility as high as 1.11 cm2 V-1 s-1. The bias stress stability for the CPS devices shows that the drain current only decays 1% after 1530 s and the mobility never decreases until 13530 s. PMID:26369163

  14. High temperature stability of lanthanum silicate dielectric on Si (001)

    SciTech Connect

    Jur, J. S.; Lichtenwalner, D. J.; Kingon, A. I.

    2007-03-05

    Integration of a high-{kappa} dielectric into complementary metal-oxide-semiconductor devices requires thermal stability of the amorphous dielectric phase and chemical compatibility with silicon. The stability of amorphous lanthanum silicate on Si (001) is investigated by means of metal-insulator-semiconductor capacitor measurements, back side secondary ion mass spectrometry (SIMS) depth profiling, and high-resolution transmission electron microscopy (HRTEM) after a 1000 deg. C, 10 s anneal in nitrogen ambient. Back side SIMS depth profiling of the TaN/LaSiO{sub x}/Si gate stack reveals no detectable lanthanum in the silicon substrate, and HRTEM shows stability of the amorphous LaSiO{sub x}. An effective work function near 4.0 eV is obtained for these gate stacks, making the stack design ideal for n-type metal-oxide-semiconductor device fabrication.

  15. Pulse Power Capability Of High Energy Density Capacitors Based on a New Dielectric Material

    NASA Technical Reports Server (NTRS)

    Winsor, Paul; Scholz, Tim; Hudis, Martin; Slenes, Kirk M.

    1999-01-01

    A new dielectric composite consisting of a polymer coated onto a high-density metallized Kraft has been developed for application in high energy density pulse power capacitors. The polymer coating is custom formulated for high dielectric constant and strength with minimum dielectric losses. The composite can be wound and processed using conventional wound film capacitor manufacturing equipment. This new system has the potential to achieve 2 to 3 J/cu cm whole capacitor energy density at voltage levels above 3.0 kV, and can maintain its mechanical properties to temperatures above 150 C. The technical and manufacturing development of the composite material and fabrication into capacitors are summarized in this paper. Energy discharge testing, including capacitance and charge-discharge efficiency at normal and elevated temperatures, as well as DC life testing were performed on capacitors manufactured using this material. TPL (Albuquerque, NM) has developed the material and Aerovox (New Bedford, MA) has used the material to build and test actual capacitors. The results of the testing will focus on pulse power applications specifically those found in electro-magnetic armor and guns, high power microwave sources and defibrillators.

  16. Ultra-High Gradient Dielectric Wakefield Accelerator Experiments

    SciTech Connect

    Thompson, M. C.; Badakov, H.; Rosenzweig, J. B.; Travis, G.; Hogan, M.; Ischebeck, R.; Kirby, N.; Siemann, R.; Walz, D.; Muggli, P.; Scott, A.; Yoder, R.

    2006-11-27

    Ultra-high gradient dielectric wakefield accelerators are a potential option for a linear collider afterburner since they are immune to the ion collapse and electron/positron asymmetry problems implicit in a plasma based afterburner. The first phase of an experiment to study the performance of dielectric Cerenkov wakefield accelerating structures at extremely high gradients in the GV/m range has been completed. The experiment took advantage of the unique SLAC FFTB electron beam and its ultra-short pulse lengths and high currents (e.g., {sigma}z = 20 {mu}m at Q = 3 nC). The FFTB electron beam was successfully focused down and sent through short lengths of fused silica capillary tubing (ID = 200 {mu}m / OD = 325 {mu}m). The pulse length of the electron beam was varied to produce a range of electric fields between 2 and 20 GV/m at the inner surface of the dielectric tubes. We observed a sharp increase in optical emissions from the capillaries in the middle part of this surface field range which we believe indicates the transition between sustainable field levels and breakdown. If this initial interpretation is correct, the surfaced fields that were sustained equate to on axis accelerating field of several GV/m. In future experiments being developed for the SLAC SABER and BNL ATF we plan to use the coherent Cerenkov radiation emitted from the capillary tube as a field strength diagnostic and demonstrate GV/m range particle energy gain.

  17. Ultra-High Gradient Dielectric Wakefield Accelerator Experiments

    NASA Astrophysics Data System (ADS)

    Thompson, M. C.; Badakov, H.; Rosenzweig, J. B.; Travis, G.; Hogan, M.; Ischebeck, R.; Kirby, N.; Siemann, R.; Walz, D.; Muggli, P.; Scott, A.; Yoder, R.

    2006-11-01

    Ultra-high gradient dielectric wakefield accelerators are a potential option for a linear collider afterburner since they are immune to the ion collapse and electron/positron asymmetry problems implicit in a plasma based afterburner. The first phase of an experiment to study the performance of dielectric Cerenkov wakefield accelerating structures at extremely high gradients in the GV/m range has been completed. The experiment took advantage of the unique SLAC FFTB electron beam and its ultra-short pulse lengths and high currents (e.g., σz = 20 μm at Q = 3 nC). The FFTB electron beam was successfully focused down and sent through short lengths of fused silica capillary tubing (ID = 200 μm / OD = 325 μm). The pulse length of the electron beam was varied to produce a range of electric fields between 2 and 20 GV/m at the inner surface of the dielectric tubes. We observed a sharp increase in optical emissions from the capillaries in the middle part of this surface field range which we believe indicates the transition between sustainable field levels and breakdown. If this initial interpretation is correct, the surfaced fields that were sustained equate to on axis accelerating field of several GV/m. In future experiments being developed for the SLAC SABER and BNL ATF we plan to use the coherent Cerenkov radiation emitted from the capillary tube as a field strength diagnostic and demonstrate GV/m range particle energy gain.

  18. Ultra-High Gradient Dielectric Wakefield Accelerator Experiments

    SciTech Connect

    Thompson, M.C.; Badakov, H.; Rosenzweig, J.B.; Travish, G.; Hogan, M.; Ischebeck, R.; Kirby, N.; Siemann, R.; Walz, D.; Muggli, P.; Scott, A.; Yoder, R.; /LLNL, Livermore /UCLA /SLAC /Southern California U. /UC, Santa Barbara /Manhattan Coll., Riverdale

    2007-03-27

    Ultra-high gradient dielectric wakefield accelerators are a potential option for a linear collider afterburner since they are immune to the ion collapse and electron/positron asymmetry problems implicit in a plasma based afterburner. The first phase of an experiment to study the performance of dielectric Cerenkov wakefield accelerating structures at extremely high gradients in the GV/m range has been completed. The experiment took advantage of the unique SLAC FFTB electron beam and its ultra-short pulse lengths and high currents (e.g., {sigma}{sub z} = 20 {micro}m at Q = 3 nC). The FFTB electron beam was successfully focused down and sent through short lengths of fused silica capillary tubing (ID = 200 {micro}m/OD = 325 {micro}m). The pulse length of the electron beam was varied to produce a range of electric fields between 2 and 20 GV/m at the inner surface of the dielectric tubes. We observed a sharp increase in optical emissions from the capillaries in the middle part of this surface field range which we believe indicates the transition between sustainable field levels and breakdown. If this initial interpretation is correct, the surfaced fields that were sustained equate to on axis accelerating field of several GV/m. In future experiments being developed for the SLAC SABER and BNL ATF we plan to use the coherent Cerenkov radiation emitted from the capillary tube as a field strength diagnostic and demonstrate GV/m range particle energy gain.

  19. Ultra-High Gradient Dielectric Wakefield Accelerator Experiments

    SciTech Connect

    Thompson, M C; Badakov, H; Rosenzweig, J B; Travish, G; Hogan, M; Ischebeck, R; Kirby, N; Siemann, R; Walz, D; Muggli, P; Scott, A; Yoder, R

    2006-08-04

    Ultra-high gradient dielectric wakefield accelerators are a potential option for a linear collider afterburner since they are immune to the ion collapse and electron/positron asymmetry problems implicit in a plasma based afterburner. The first phase of an experiment to study the performance of dielectric Cerenkov wakefield accelerating structures at extremely high gradients in the GV/m range has been completed. The experiment took advantage of the unique SLAC FFTB electron beam and its ultra-short pulse lengths and high currents (e.g., {sigma}{sub z} = 20 {micro}m at Q = 3 nC). The FFTB electron beam was successfully focused down and sent through short lengths of fused silica capillary tubing (ID = 200 {micro}m/OD = 325 {micro}m). The pulse length of the electron beam was varied to produce a range of electric fields between 2 and 20 GV/m at the inner surface of the dielectric tubes. We observed a sharp increase in optical emissions from the capillaries in the middle part of this surface field range which we believe indicates the transition between sustainable field levels and breakdown. If this initial interpretation is correct, the surfaced fields that were sustained equate to on axis accelerating field of several GV/m. In future experiments being developed for the SLAC SABER and BNL ATF we plan to use the coherent Cerenkov radiation emitted from the capillary tube as a field strength diagnostic and demonstrate GV/m range particle energy gain.

  20. The effect of PECVD plasma decomposition on the wettability and dielectric constant changes in silicon modified DLC films for potential MEMS and low stiction applications

    SciTech Connect

    Ogwu, A. A.; Okpalugo, T. I. T.; McLaughlin, J. A. D.

    2012-09-15

    We have carried out investigations aimed at understanding the mechanism responsible for a water contact angle increase of up to ten degrees and a decrease in dielectric constant in silicon modified hydrogenated amorphous carbon films compared to unmodified hydrogenated amorphous carbon films. Our investigations based on surface chemical constituent analysis using Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), SIMS, FTIR, contact angle / surface energy measurements and spectroscopic ellipsometry suggests the presence of hydrophobic chemical entities on the surface of the films. This observation is consistent with earlier theoretical plasma chemistry predictions and observed Raman peak shifts in the films. These surface hydrophobic entities also have a lower polarizability than the bonds in the un-modified films thereby reducing the dielectric constant of the silicon modified films measured by spectroscopic ellipsometry. Ellipsometric dielectric constant measurement is directly related to the surface energy through Hamaker's constant. Our current finding is expected to be of benefit to understanding stiction, friction and lubrication in areas that range from nano-tribology to microfluidics.

  1. High internal free volume compositions for low-k dielectric and other applications

    NASA Technical Reports Server (NTRS)

    Swager, Timothy M. (Inventor); Bouffard, Jean (Inventor)

    2010-01-01

    The present invention provides materials, devices, and methods involving new heterocyclic, shape-persistent monomeric units with internal free volume. In some cases, materials the present invention may comprise monomers, oligomers, or polymers that incorporate a heterocyclic, shape-persistent iptycene. The present invention may provide materials having low dielectric constants and improved stability at high operating temperatures due to the electron-poor character of materials. In addition, compositions of the invention may be easily synthesized and readily modified to suit a particular application.

  2. Invited Article: Broadband highly efficient dielectric metadevices for polarization control

    NASA Astrophysics Data System (ADS)

    Kruk, Sergey; Hopkins, Ben; Kravchenko, Ivan I.; Miroshnichenko, Andrey; Neshev, Dragomir N.; Kivshar, Yuri S.

    2016-06-01

    Metadevices based on dielectric nanostructured surfaces with both electric and magnetic Mie-type resonances have resulted in the best efficiency to date for functional flat optics with only one disadvantage: a narrow operational bandwidth. Here we experimentally demonstrate broadband transparent all-dielectric metasurfaces for highly efficient polarization manipulation. We utilize the generalized Huygens principle, with a superposition of the scattering contributions from several electric and magnetic multipolar modes of the constituent meta-atoms, to achieve destructive interference in reflection over a large spectral bandwidth. By employing this novel concept, we demonstrate reflectionless (˜90% transmission) half-wave plates, quarter-wave plates, and vector beam q-plates that can operate across multiple telecom bands with ˜99% polarization conversion efficiency.

  3. High temperature dielectric properties of Apical, Kapton, Peek, Teflon AF, and Upilex polymers

    NASA Technical Reports Server (NTRS)

    Hammoud, A. N.; Baumann, E. D.; Overton, E.; Myers, I. T.; Suthar, J. L.; Khachen, W.; Laghari, J. R.

    1992-01-01

    Reliable lightweight systems capable of providing electrical power at the magawatt level are a requirement for future manned space exploration missions. This can be achieved by the development of high temperature insulating materials which are not only capable of surviving the hostile space environment but can contribute to reducing the mass and weight of the heat rejection system. In this work, Apical, Upilex, Kapton, Teflon AF, and Peek polymers are characterized for AC and DC dielectric breakdown in air and in silicone oil at temperatures up to 250 C. The materials are also tested in terms of their dielectric constant and dissipation factor at high temperatures with an electrical stress of 60 Hz, 200 V/mil present. The effects of thermal aging on the properties of the films are determined after 15 hours of exposure to 200 and 250 C, each. The results obtained are discussed and conclusions are made concerning the suitability of these dielectrics for use in capacitors and cable insulations in high temperature environments.

  4. High temperature VSCF (Variable Speed Constant Frequency) generator system

    NASA Astrophysics Data System (ADS)

    Maphet, Thomas Allen; McCabria, Jack Lee; Kouba, Carroll Charles; Mitchell, James Thomas; Kwiecinski, James Robert

    1989-04-01

    The high temperature VSCF generator program was designed to develop a generating system capable of withstanding constantly high oil-in temperatures of 200 C in an ambient environment of 200 C. This is a requirement due to anticipated new fighter aircraft designs that will not be capable of cooling the oil to 100 C as in today's designs due to size restrictions of the heat exchanger and/or extended operation of the aircraft at supersonic speeds. The generator uses composite material to withstand the constant use of 200 C inlet oil.

  5. Dielectric characterization of high-performance spaceflight materials

    NASA Astrophysics Data System (ADS)

    Kleppe, Nathan; Nurge, Mark A.; Bowler, Nicola

    2015-03-01

    As commercial space travel increases, the need for reliable structural health monitoring to predict possible weaknesses or failures of structural materials also increases. Monitoring of these materials can be done through the use of dielectric spectroscopy by comparing permittivity or conductivity measurements performed on a sample in use to that of a pristine sample from 100 μHz to 3 GHz. Fluctuations in these measured values or of the relaxation frequencies, if present, can indicate chemical or physical changes occurring within the material and the possible need for maintenance/replacement. In this work, we establish indicative trends that occur due to changes in dielectric spectra during accelerated aging of various high-performance polymeric materials: ethylene vinyl alcohol (EVOH), Poly (ether ether ketone) (PEEK), polyphenylene sulfide (PPS), and ultra-high molecular weight polyethylene (UHMWPE). Uses for these materials range from electrical insulation and protective coatings to windows and air- or space-craft parts that may be subject to environmental damage over long-term operation. Samples were prepared by thermal exposure and, separately, by ultraviolet/water-spray cyclic aging. The aged samples showed statistically-significant trends of either increasing or decreasing real or imaginary permittivity values, relaxation frequencies, conduction or the appearance of new relaxation modes. These results suggest that dielectric testing offers the possibility of nondestructive evaluation of the extent of age-related degradation in these materials.

  6. Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides.

    PubMed

    Zeng, Qingfeng; Oganov, Artem R; Lyakhov, Andriy O; Xie, Congwei; Zhang, Xiaodong; Zhang, Jin; Zhu, Qiang; Wei, Bingqing; Grigorenko, Ilya; Zhang, Litong; Cheng, Laifei

    2014-02-01

    High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as a fitness function in conjunction with first-principles calculations and the global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO2 and HfO2, some of which correspond to known phases and some of which are new. The results allow us to propose characteristics (genes) common to high-fitness structures--these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO2-SiO2 system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue for discovering novel high-k dielectrics with both fixed and variable compositions, and will speed up the process of materials discovery. PMID:24508952

  7. Spectroscopic ellipsometry analysis of nanoporous low dielectric constant films processed via supercritical carbon dioxide for next-generation microelectronic devices

    NASA Astrophysics Data System (ADS)

    Othman, Maslina T.

    My research will address issues at the back-end-of-line in microelectronics fabrication, specifically the need for Low-k extendibility. The International Roadmap for Semiconductors (2005) suggested that interconnect insulation must be replaced with a material having an ultra-low dielectric constant (k) of < 2.0 and can withstand rigorous current process integration for the 65 nm technology. Creating porosity in the films produces k-values as low (1.0) air. In this research, supercritical CO2 (SCCO2) process is utilized to create pores, remove water, repair plasma-damaged sample and seal pores. These multi-step processing does not only produce low-k film but also create device reliability. Spectroscopy ellipsometric (SE) analysis is used to evaluate the performance of each process on porous film. In SE analysis, Cauchy, Bruggeman Effective Medium Approximation and graded models are used to model the processed samples. The depth profile SE analysis demonstrates the individual process performance based on its changes of refractive index (n) throughout the film thickness. SE also provide important film properties like thickness, porosity etc. In addition to SE, Fourier Transform Infra-red (FT-IR), Scanning Electron Microscopy (SEM) and electrical characterizations are used. Results show that SCCO2/co-solvents can extract porogens and remove water effectively at a significantly shorter time (≤1 hr) and at a low temperature (≤160°C) without thickness shrinkage in contrast with thermal annealing which uses 450°C and 5 hours without significantly shrinkage. SCCO2/TMCS removes water and terminates silanol group with methyl group, and hence preventing water re-adsorption which increases k. The dense layer on the sample surface that formed through the vapor treatment/HMDS helps to seal pores and prevent metal diffusion. This research also shows that patterning samples prior to porogen/water removal can minimize plasma damages on porous sample.

  8. Dielectric-Lined High-Gradient Accelerator Structure

    SciTech Connect

    Jay L. Hirshfield

    2012-04-24

    Rectangular particle accelerator structures with internal planar dielectric elements have been studied, with a view towards devising structures with lower surface fields for a given accelerating field, as compared with structures without dielectrics. Success with this concept is expected to allow operation at higher accelerating gradients than otherwise on account of reduced breakdown probabilities. The project involves studies of RF breakdown on amorphous dielectrics in test cavities that could enable high-gradient structures to be built for a future multi-TeV collider. The aim is to determine what the limits are for RF fields at the surfaces of selected dielectrics, and the resulting acceleration gradient that could be achieved in a working structure. The dielectric of principal interest in this study is artificial CVD diamond, on account of its advertised high breakdown field ({approx}2 GV/m for dc), low loss tangent, and high thermal conductivity. Experimental studies at mm-wavelengths on materials and structures for achieving high acceleration gradient were based on the availability of the 34.3 GHz third-harmonic magnicon amplifier developed by Omega-P, and installed at the Yale University Beam Physics Laboratory. Peak power from the magnicon was measured to be about 20 MW in 0.5 {micro}s pulses, with a gain of 54 dB. Experiments for studying RF high-field effects on CVD diamond samples failed to show any evidence after more than 10{sup 5} RF pulses of RF breakdown up to a tangential surface field strength of 153 MV/m; studies at higher fields were not possible due to a degradation in magnicon performance. A rebuild of the tube is underway at this writing. Computed performance for a dielectric-loaded rectangular accelerator structure (DLA) shows highly competitive properties, as compared with an existing all-metal structure. For example, comparisons were made of a DLA structure having two planar CVD diamond elements with a all-metal CERN structure HDS

  9. High-κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

    PubMed Central

    Liao, Lei; Bai, Jingwei; Qu, Yongquan; Lin, Yung-chen; Li, Yujing; Huang, Yu; Duan, Xiangfeng

    2010-01-01

    Deposition of highdielectrics onto graphene is of significant challenge due to the difficulties of nucleating high quality oxide on pristine graphene without introducing defects into the monolayer of carbon lattice. Previous efforts to deposit highdielectrics on graphene often resulted in significant degradation in carrier mobility. Here we report an entirely new strategy to integrate high quality highdielectrics with graphene by first synthesizing freestanding high-κ oxide nanoribbons at high temperature and then transferring them onto graphene at room temperature. We show that single crystalline Al2O3 nanoribbons can be synthesized with excellent dielectric properties. Using such nanoribbons as the gate dielectrics, we have demonstrated top-gated graphene transistors with the highest carrier mobility (up to 23,600 cm2/V·s) reported to date, and a more than 10-fold increase in transconductance compared to the back-gated devices. This method opens a new avenue to integrate highdielectrics on graphene with the preservation of the pristine nature of graphene and high carrier mobility, representing an important step forward to high-performance graphene electronics. PMID:20308584

  10. High Frequency Scattering from Arbitrarily Oriented Dielectric Disks

    NASA Technical Reports Server (NTRS)

    Levine, D. M.; Meneghini, R.; Lang, R. H.; Seker, S. S.

    1982-01-01

    Calculations have been made of electromagnetic wave scattering from dielectric disks of arbitrary shape and orientation in the high frequency (physical optics) regime. The solution is obtained by approximating the fields inside the disk with the fields induced inside an identically oriented slab (i.e. infinite parallel planes) with the same thickness and dielectric properties. The fields inside the disk excite conduction and polarization currents which are used to calculate the scattered fields by integrating the radiation from these sources over the volume of the disk. This computation has been executed for observers in the far field of the disk in the case of disks with arbitrary orientation and for arbitrary polarization of the incident radiation. The results have been expressed in the form of a dyadic scattering amplitude for the disk. The results apply to disks whose diameter is large compared to wavelength and whose thickness is small compared to diameter, but the thickness need not be small compared to wavelength. Examples of the dependence of the scattering amplitude on frequency, dielectric properties of the disk and disk orientation are presented for disks of circular cross section.

  11. High-efficiency dielectric reflection gratings: design, fabrication, and analysis.

    PubMed

    Hehl, K; Bischoff, J; Mohaupt, U; Palme, M; Schnabel, B; Wenke, L; Bödefeld, R; Theobald, W; Welsch, E; Sauerbrey, R; Heyer, H

    1999-10-20

    We report on reflection gratings produced entirely of dielectric materials. This gives the opportunity to enhance the laser damage threshold over that occurring in conventional metal gratings used for chirped-pulse-amplification, high-power lasers. The design of the system combines a dielectric mirror and a well-defined corrugated top layer to obtain optimum results. The rules that have to be considered for the design optimization are described. We optimized the parameters of a dielectric grating with a binary structure and theoretically obtained 100% reflectivity for the -1 order in the Littrow mounting for a 45 degrees angle of incidence. Subsequently we fabricated gratings by structuring a low-refractive-index top layer of a multilayer stack with electron-beam lithography. The multilayer system was fabricated by conventional sputtering techniques onto a flat fused-silica substrate. The parameters of the device were measured and controlled by light scatterometer equipment. We measured 97% diffraction efficiency in the -1 order and damage thresholds of 4.4 and 0.18 J/cm(2) with 5-ns and 1-ps laser pulses, respectively, at a wavelength of 532 nm in working conditions. PMID:18324150

  12. Complex dielectric constant well logging means and method for determining the water saturation and the water resistivity of an earth formation

    SciTech Connect

    Sims, J.C.; Cox, P.T.; Simpson, R.S.

    1988-09-27

    This patent describes a well logging system for determining the water saturation of an earth formation and the resistivity of the water comprising: means for transmitting electromagnetic energy at a frequency lying within a range of frequencies from 10 MHz to 200 MHz into the earth formation from a borehole traversing the earth formation, means for receiving electromagnetic energies at two locations in the borehole from the earth formation, means for deriving a complex dielectric constant from the received electromagnetic energies, and means for deriving the water resistivity and the water saturation of the earth formation in accordance with a predetermined porosity of the earth formation and with the real and imaginary parts of the derived complex dielectric constant.

  13. Hydrogen bond network in the hydration layer of the water confined in nanotubes increasing the dielectric constant parallel along the nanotube axis.

    PubMed

    Qi, Wenpeng; Zhao, Hongwei

    2015-09-21

    The water confined in nanotubes has been extensively studied, because of the potential usages in drug delivery and desalination. The radial distribution of the dielectric constant parallel along the nanotube axis was obtained by molecular dynamics simulations in a carbon nanotube and a nanotube with a very small van der Waals potential. The confined water was divided into two parts, the middle part water and the hydration water. In both cases, the hydrogen bond orientation of the middle water is isotropic, while the hydrogen bonds in hydration layers are apt to parallel along the nanotube axis. Therefore, the hydration water has higher dipole correlations increasing the dielectric constant along the nanotube axis. PMID:26395729

  14. High frequency dielectric dispersion of polyelectrolyte solutions and its relation to counterion condensation

    NASA Astrophysics Data System (ADS)

    Penafiel, L. Miguel; Litovitz, Theodore A.

    1992-07-01

    The dielectric properties of polyelectrolyte solutions are studied in terms of counterion condensation by measurements of the dielectric response of pH buffered Na polyacrylate solutions. pH values are selected to allow variation of the charge density parameter ξ in the range between 0.5-2.8, that is, across ξ=1, the theoretical critical level for counterion condensation. The dielectric increment of the high frequency dispersion, Δɛ2, is found to have nonzero values only above the counterion condensation threshold and is therefore linked to the occurrence of counterion condensation. Above the condensation threshold Δɛ2 (≊6) and its corresponding polarizability α∥2 (≊6×10-16 cm3) are found to be approximately constant with increasing ξ. This result is predicted by Manning's polarizability model for condensed counterions which results in a good fit to the experimental data when the average length of the polyion segments parallel to the external field, Ls, is set to 284 Å. This value of Ls is also shown to be in relatively close agreement with the value calculated for the length of a rigid subunit in Mandel's polyion model, obtained using the relaxation time of the high frequency dispersion. The length Ls, which is larger than the persistence length, is estimated to be of the order of magnitude of the correlation length between segments.

  15. Rectangular Dielectric-loaded Structures for Achieving High Acceleration Gradients

    SciTech Connect

    Wang Changbiao; Yakovlev, V. P.; Marshall, T. C.; LaPointe, M. A.; Hirshfield, J. L.

    2006-11-27

    Rectangular dielectric-loaded structures are described that may sustain higher acceleration gradients than conventional all-metal structures with similar apertures. One structure is a test cavity designed to ascertain the breakdown limits of dielectrics, while a second structure could be the basis for a two-beam accelerator. CVD diamond is an attractive dielectric for a high-gradient structure, since the published DC breakdown limit for CVD diamond is {approx} 2 GV/m, although the limit has never been determined for RF fields. Here we present a design of a diamond-lined test cavity to measure the breakdown limit. The designed cavity operates at 34 GHz, where with 10-MW input power it is expected to produce an {approx}800 MV/m field on the diamond surface - provided breakdown is avoided. The two channel rectangular dielectric-loaded waveguide could be a two-beam accelerator structure, in which a drive beam is in one channel and an accelerated beam is in the other. The RF power produced by drive bunches in the drive channel is continuously coupled to the acceleration channel. The ratio of fields in the channels (transformer ratio) for the operating mode can be designed by adjusting the dimensions of the structure. An example of the two-channel structure is described, in which a train of five 3-nC drive bunches excites wake fields in the accelerator channel of up to 1.3 GV/m with a transformer ratio of 10 for the design mode.

  16. Optical constants, dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Sarkar, S.; Das, N. S.; Chattopadhyay, K. K.

    2014-07-01

    BiVO4 thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO4 target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO4 target material was prepared through solid-state reaction method by heating Bi2O3 and V2O5 mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV-Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO4 thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO4 thin films have been investigated in detail. Dielectric properties of the BiVO4 thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO4 thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO4.

  17. Analysis Code for High Gradient Dielectric Insulator Surface Breakdown

    SciTech Connect

    Ives, Robert Lawrence; Verboncoeur, John; Aldan, Manuel

    2010-05-30

    High voltage (HV) insulators are critical components in high-energy, accelerator and pulsed power systems that drive diverse applications in the national security, nuclear weapons science, defense and industrial arenas. In these systems, the insulator may separate vacuum/non-vacuum regions or conductors with high electrical field gradients. These insulators will often fail at electric fields over an order of magnitude lower than their intrinsic dielectric strength due to flashover at the dielectric interface. Decades of studies have produced a wealth of information on fundamental processes and mechanisms important for flashover initiation, but only for relatively simple insulator configurations in controlled environments. Accelerator and pulsed power system designers are faced with applying the fundamental knowledge to complex, operational devices with escalating HV requirements. Designers are forced to rely on “best practices” and expensive prototype testing, providing boundaries for successful operation. However, the safety margin is difficult to estimate, and system design must be very conservative for situations where testing is not practicable, or replacement of failed parts is disruptive or expensive. The Phase I program demonstrated the feasibility of developing an advanced code for modeling insulator breakdown. Such a code would be of great interest for a number of applications, including high energy physics, microwave source development, fusion sciences, and other research and industrial applications using high voltage devices.

  18. Low-voltage flexible organic electronics based on high-performance sol-gel titanium dioxide dielectric.

    PubMed

    Sung, Sujin; Park, Sungjun; Lee, Won-June; Son, Jongho; Kim, Chang-Hyun; Kim, Yoonhee; Noh, Do Young; Yoon, Myung-Han

    2015-04-15

    In this letter, we report that high-performance insulating films can be generated by judicious control over the microstructure of sol-gel-processed titanium dioxide (TiO2) films, typically known as wide-bandgap semiconductors. The resultant device made of 23 nm-thick TiO2 dielectric layer exhibits a low leakage current density of ∼1 × 10(-7) A cm(-2) at 2 V and a large areal capacitance of 560 nF cm(-2) with the corresponding dielectric constant of 27. Finally, low-voltage flexible organic thin-film transistors were successfully demonstrated by incorporating this versatile solution-processed oxide dielectric material into pentacene transistors on polyimide substrates. PMID:25751669

  19. Liquid Metals: Stretchable, High-k Dielectric Elastomers through Liquid-Metal Inclusions (Adv. Mater. 19/2016).

    PubMed

    Bartlett, Michael D; Fassler, Andrew; Kazem, Navid; Markvicka, Eric J; Mandal, Pratiti; Majidi, Carmel

    2016-05-01

    An all-soft-matter composite consisting of liquid metal microdroplets embedded in a soft elastomer matrix is presented by C. Majidi and co-workers on page 3726. This composite exhibits a high dielectric constant while maintaining exceptional elasticity and compliance. The image shows the composite's microstructure captured by 3D X-ray imaging using a nano-computed tomographic scanner. PMID:27167031

  20. Mechanisms of Microwave Loss Tangent in High Performance Dielectric Materials

    NASA Astrophysics Data System (ADS)

    Liu, Lingtao

    The mechanism of loss in high performance microwave dielectrics with complex perovskite structure, including Ba(Zn1/3Ta2/3)O 3, Ba(Cd1/3Ta2/3)O3, ZrTiO4-ZnNb 2O6, Ba(Zn1/3Nb2/3)O3, and BaTi4O9-BaZn2Ti4O11, has been investigated. We studied materials synthesized in our own lab and from commercial vendors. Then the measured loss tangent was correlated to the optical, structural, and electrical properties of the material. To accurately and quantitatively determine the microwave loss and Electron Paramagnetic Resonance (EPR) spectra as a function of temperature and magnetic field, we developed parallel plate resonator (PPR) and dielectric resonator (DR) techniques. Our studies found a marked increase in the loss at low temperatures is found in materials containing transition metal with unpaired d-electrons as a result of resonant spin excitations in isolated atoms (light doping) or exchange coupled clusters (moderate to high doping); a mechanism that differs from the usual suspects. The loss tangent can be drastically reduced by applying static magnetic fields. Our measurements also show that this mechanism significantly contributes to room temperature loss, but does not dominate. In order to study the electronic structure of these materials, we grew single crystal thin film dielectrics for spectroscopic studies, including angular resolved photoemission spectroscopy (ARPES) experiment. We have synthesized stoichiometric Ba(Cd1/3Ta2/3)O3 [BCT] (100) dielectric thin films on MgO (100) substrates using Pulsed Laser Deposition. Over 99% of the BCT film was found to be epitaxial when grown with an elevated substrate temperature of 635 °C, an enhanced oxygen pressures of 53 Pa and a Cd-enriched BCT target with a 1 mol BCT: 1.5 mol CdO composition. Analysis of ultra violet optical absorption results indicate that BCT has a bandgap of 4.9 eV.

  1. High-voltage pulsed life of multistressed polypropylene capacitor dielectric

    SciTech Connect

    Laghari, J.R. )

    1992-02-01

    High-voltage polypropylene capacitors were aged under singular as well as simultaneous multiple stresses (electrical, thermal, and radiation) at the University of Buffalo's 2 MW thermal nuclear reactor. These stresses were combined neutron-gamma radiation with a total dose of 1.6 {times} 10{sup 6} rad, electrical stress at 40 V{sub rms}/{mu}m, and thermal stress at 90{degrees} C. After exposure, the polypropylene dielectric was tested for life (number of pulses to fail) under high-voltage high-repetition-rate (100 pps) pulses. Pulsed life data were also compared with ac life data. Results show that radiation stress causes the most degradation in life, either acting alone or in combination with other stresses. The largest reduction in life occurs when polypropylene is aged under simultaneous multiple stresses (electrical, thermal, and radiation). In this paper, it is shown that pulsed life can be equivalently compared with ac life.

  2. Evaluation of high temperature dielectric films for high voltage power electronic applications

    NASA Technical Reports Server (NTRS)

    Suthar, J. L.; Laghari, J. R.

    1992-01-01

    Three high temperature films, polyimide, Teflon perfluoroalkoxy and poly-P-xylene, were evaluated for possible use in high voltage power electronic applications, such as in high energy density capacitors, cables and microelectronic circuits. The dielectric properties, including permittivity and dielectric loss, were obtained in the frequency range of 50 Hz to 100 kHz at temperatures up to 200 C. The dielectric strengths at 60 Hz were determined as a function of temperature to 250 C. Confocal laser microscopy was performed to diagnose for voids and microimperfections within the film structure. The results obtained indicate that all films evaluated are capable of maintaining their high voltage properties, with minimal degradation, at temperatures up to 200 C. However, above 200 C, they lose some of their electrical properties. These films may therefore become viable candidates for high voltage power electronic applications at high temperatures.

  3. Semicrystalline Structure-Dielectric Property Relationship and Electrical Conduction in a Biaxially Oriented Poly(vinylidene fluoride) Film under High Electric Fields and High Temperatures.

    PubMed

    Yang, Lianyun; Ho, Janet; Allahyarov, Elshad; Mu, Richard; Zhu, Lei

    2015-09-16

    Poly(vinylidene fluoride) (PVDF)-based homopolymers and copolymers are attractive for a broad range of electroactive applications because of their high dielectric constants. Especially, biaxially oriented PVDF (BOPVDF) films exhibit a DC breakdown strength as high as that for biaxially oriented polypropylene films. In this work, we revealed the molecular origin of the high dielectric constant via study of a commercial BOPVDF film. By determination of the dielectric constant for the amorphous phase in BOPVDF, a high value of ca. 21-22 at 25 °C was obtained, and a three-phase (i.e., lamellar crystal/oriented interphase/amorphous region) semicrystalline model was proposed to explain this result. Meanwhile, electronic conduction mechanisms in BOPVDF under high electric fields and elevated temperatures were investigated by thermally stimulated depolarization current (TSDC) spectroscopy and leakage current studies. Space charge injection from metal electrodes was identified as a major factor for electronic conduction when BOPVDF was poled above 75 °C and 20 MV/m. In addition, when silver or aluminum were used as electrodes, new ions were generated from electrochemical reactions under high fields. Due to the electrochemical reactions between PVDF and the metal electrode, a question is raised for practical electrical applications using PVDF and its copolymers under high-field and high-temperature conditions. A potential method to prevent electrochemical degradation of PVDF is proposed in this study. PMID:26120953

  4. Electrical Capacitance Volume Tomography with High-Contrast Dielectrics

    NASA Technical Reports Server (NTRS)

    Nurge, Mark

    2010-01-01

    The Electrical Capacitance Volume Tomography (ECVT) system has been designed to complement the tools created to sense the presence of water in nonconductive spacecraft materials, by helping to not only find the approximate location of moisture but also its quantity and depth. The ECVT system has been created for use with a new image reconstruction algorithm capable of imaging high-contrast dielectric distributions. Rather than relying solely on mutual capacitance readings as is done in traditional electrical capacitance tomography applications, this method reconstructs high-resolution images using only the self-capacitance measurements. The image reconstruction method assumes that the material under inspection consists of a binary dielectric distribution, with either a high relative dielectric value representing the water or a low dielectric value for the background material. By constraining the unknown dielectric material to one of two values, the inverse math problem that must be solved to generate the image is no longer ill-determined. The image resolution becomes limited only by the accuracy and resolution of the measurement circuitry. Images were reconstructed using this method with both synthetic and real data acquired using an aluminum structure inserted at different positions within the sensing region. The cuboid geometry of the system has two parallel planes of 16 conductors arranged in a 4 4 pattern. The electrode geometry consists of parallel planes of copper conductors, connected through custom-built switch electronics, to a commercially available capacitance to digital converter. The figure shows two 4 4 arrays of electrodes milled from square sections of copper-clad circuit-board material and mounted on two pieces of glass-filled plastic backing, which were cut to approximately square shapes, 10 cm on a side. Each electrode is placed on 2.0-cm centers. The parallel arrays were mounted with the electrode arrays approximately 3 cm apart. The open ends

  5. Surface-modified Ba(Zr0.3Ti0.7)O3 nanofibers by polyvinylpyrrolidone filler for poly(vinylidene fluoride) composites with enhanced dielectric constant and energy storage density

    PubMed Central

    Liu, Shaohui; Xue, Shuangxi; Xiu, Shaomei; Shen, Bo; Zhai, Jiwei

    2016-01-01

    Ferroelectric-relaxor behavior of Ba(Zr0.3Ti0.7)O3 nanofibers (BZT NF) with a large aspect ratio were prepared via electrospinning and surface modified by PVP as dielectric fillers. The nanocomposite flexible films based on surface modified BZT NF and polyvinylidene fluoride (PVDF) were fabricated via a solution casting. The results show that the surface-modified BZT NF fillers are highly dispersed and well integrated in the PVDF nanocomposites. The nanocomposites exhibit enhanced dielectric constant and reduced loss tangents at a low volume fraction of surface-modified BZT NF. The polymer nanocomposites maintain a relatively high breakdown strength, which is favorable for enhancing energy storage density in the nanocomposites. The nanocomposite containing of 2.5 vol. % of PVP modified BZT NF exhibits energy density as high as 6.3 J/cm3 at 3800 kV/cm, which is more than doubled that of the pure PVDF of 2.8 J/cm3 at 4000 kV/cm. Such significant enhancement could be attributed to the combined effects of the surface modification and large aspect ratio of the BZT NF. This work may provide a route for using the surface modified ferroelectric-relaxor behavior of ceramic nanofibers to enhance the dielectric energy density in ceramic-polymer nanocomposites. PMID:27184360

  6. Surface-modified Ba(Zr0.3Ti0.7)O3 nanofibers by polyvinylpyrrolidone filler for poly(vinylidene fluoride) composites with enhanced dielectric constant and energy storage density

    NASA Astrophysics Data System (ADS)

    Liu, Shaohui; Xue, Shuangxi; Xiu, Shaomei; Shen, Bo; Zhai, Jiwei

    2016-05-01

    Ferroelectric-relaxor behavior of Ba(Zr0.3Ti0.7)O3 nanofibers (BZT NF) with a large aspect ratio were prepared via electrospinning and surface modified by PVP as dielectric fillers. The nanocomposite flexible films based on surface modified BZT NF and polyvinylidene fluoride (PVDF) were fabricated via a solution casting. The results show that the surface-modified BZT NF fillers are highly dispersed and well integrated in the PVDF nanocomposites. The nanocomposites exhibit enhanced dielectric constant and reduced loss tangents at a low volume fraction of surface-modified BZT NF. The polymer nanocomposites maintain a relatively high breakdown strength, which is favorable for enhancing energy storage density in the nanocomposites. The nanocomposite containing of 2.5 vol. % of PVP modified BZT NF exhibits energy density as high as 6.3 J/cm3 at 3800 kV/cm, which is more than doubled that of the pure PVDF of 2.8 J/cm3 at 4000 kV/cm. Such significant enhancement could be attributed to the combined effects of the surface modification and large aspect ratio of the BZT NF. This work may provide a route for using the surface modified ferroelectric-relaxor behavior of ceramic nanofibers to enhance the dielectric energy density in ceramic-polymer nanocomposites.

  7. Surface-modified Ba(Zr0.3Ti0.7)O3 nanofibers by polyvinylpyrrolidone filler for poly(vinylidene fluoride) composites with enhanced dielectric constant and energy storage density.

    PubMed

    Liu, Shaohui; Xue, Shuangxi; Xiu, Shaomei; Shen, Bo; Zhai, Jiwei

    2016-01-01

    Ferroelectric-relaxor behavior of Ba(Zr0.3Ti0.7)O3 nanofibers (BZT NF) with a large aspect ratio were prepared via electrospinning and surface modified by PVP as dielectric fillers. The nanocomposite flexible films based on surface modified BZT NF and polyvinylidene fluoride (PVDF) were fabricated via a solution casting. The results show that the surface-modified BZT NF fillers are highly dispersed and well integrated in the PVDF nanocomposites. The nanocomposites exhibit enhanced dielectric constant and reduced loss tangents at a low volume fraction of surface-modified BZT NF. The polymer nanocomposites maintain a relatively high breakdown strength, which is favorable for enhancing energy storage density in the nanocomposites. The nanocomposite containing of 2.5 vol. % of PVP modified BZT NF exhibits energy density as high as 6.3 J/cm(3) at 3800 kV/cm, which is more than doubled that of the pure PVDF of 2.8 J/cm(3) at 4000 kV/cm. Such significant enhancement could be attributed to the combined effects of the surface modification and large aspect ratio of the BZT NF. This work may provide a route for using the surface modified ferroelectric-relaxor behavior of ceramic nanofibers to enhance the dielectric energy density in ceramic-polymer nanocomposites. PMID:27184360

  8. Rescaled temperature dependence of dielectric behavior of ferroelectric polymer composites

    NASA Astrophysics Data System (ADS)

    Dang, Zhi-Min; Wang, Lan; Wang, Hai-Yan; Nan, Ce-Wen; Xie, Dan; Yin, Yi; Tjong, S. C.

    2005-04-01

    Rescaled temperature dependence of dielectric behavior of ferroelectric polyvinylidene fluoride (PVDF) filled with electroactive ceramic particles of rocksalt-type Li and Ti codoped NiO (LTNO) was studied at wide frequency ranges. Dielectric behavior of the flexible PVDF-LTNO composites with LTNO filler at the volumetric function of 0.3 exhibits a dielectric constant value, ɛ ≈50 at broad temperature range (290-360 K), and the value is frequency independent from 103 to 106Hz. The dielectric response of the composite is almost in accordance to that of pure PVDF matrix polymer. It was found that though the dielectric constant value of the composites is high due to an introduction of the rock salt-type LTNO ceramic particles with high dielectric constant, the glass transition of the polymer and dielectric relaxation related to the wide-angle oscillation of polar groups attached to the main polymer chain determine the dielectric behavior of the composite.

  9. Bursting Drops in Solid Dielectrics Caused by High Voltages

    PubMed Central

    Wang, Qiming; Suo, Zhigang

    2013-01-01

    Drops in fluids tend to be spheres—a shape that minimizes surface energy. In thunderstorm clouds, drops can become unstable and emit thin jets when charged beyond certain limits. The instability of electrified drops in gases and liquids has been widely studied and used in applications including ink-jet printing, electrospinning nano-fibers, microfluidics and electrospray ionization. Here we report a different scenario: drops in solids become unstable and burst under sufficiently high electric fields. We find the instability of drops in solids morphologically resembles that in liquids, but the critical electric field for the instability follows a different scaling due to elasticity of solids. Our observations and theoretical models not only advance the fundamental understanding of electrified drops but also suggest a new failure mechanism of high-energy-density dielectric polymers, which have diverse applications ranging from capacitors for power grids and electric vehicles to muscle-like transducers for soft robots and energy harvesting. PMID:23093194

  10. Bursting drops in solid dielectrics caused by high voltages.

    PubMed

    Wang, Qiming; Suo, Zhigang; Zhao, Xuanhe

    2012-01-01

    Fluid drops tend to be spheres--a shape that minimizes surface energy. In thunderstorm clouds, drops can become unstable and emit thin jets when charged beyond certain limits. The instability of electrified drops in gases and liquids has been widely studied and used in applications including ink-jet printing, electrospinning nanofibers, microfluidics and electrospray ionization. Here we report a different scenario: drops in solids become unstable and burst under sufficiently high electric fields. We find the instability of drops in solids morphologically resembles that in liquids, but the critical electric field for the instability follows a different scaling due to elasticity of solids. Our observations and theoretical models not only advance the fundamental understanding of electrified drops, but also suggest a new failure mechanism of high energy density dielectric polymers, which have diverse applications ranging from capacitors for power grids and electric vehicles to muscle-like transducers for soft robots and energy harvesting. PMID:23093194

  11. Bursting drops in solid dielectrics caused by high voltages

    NASA Astrophysics Data System (ADS)

    Wang, Qiming; Suo, Zhigang; Zhao, Xuanhe

    2012-10-01

    Fluid drops tend to be spheres—a shape that minimizes surface energy. In thunderstorm clouds, drops can become unstable and emit thin jets when charged beyond certain limits. The instability of electrified drops in gases and liquids has been widely studied and used in applications including ink-jet printing, electrospinning nanofibers, microfluidics and electrospray ionization. Here we report a different scenario: drops in solids become unstable and burst under sufficiently high electric fields. We find the instability of drops in solids morphologically resembles that in liquids, but the critical electric field for the instability follows a different scaling due to elasticity of solids. Our observations and theoretical models not only advance the fundamental understanding of electrified drops, but also suggest a new failure mechanism of high energy density dielectric polymers, which have diverse applications ranging from capacitors for power grids and electric vehicles to muscle-like transducers for soft robots and energy harvesting.

  12. High Dielectric and Mechanical Properties Achieved in Cross-Linked PVDF/α-SiC Nanocomposites with Elevated Compatibility and Induced Polarization at the Interface.

    PubMed

    Feng, Yefeng; Miao, Bei; Gong, Honghong; Xie, Yunchuan; Wei, Xiaoyong; Zhang, Zhicheng

    2016-07-27

    Remarkably improved dielectric properties including high-k, low loss, and high breakdown strength combined with promising mechanical performance such as high flexibility, good heat, and chemical resistivity are hard to be achieved in high-k dielectric composites based on the current composite fabrication strategy. In this work, a family of high-k polymer nanocomposites has been fabricated from a facile suspension cast process followed by chemical cross-linking at elevated temperature. Internal double bonds bearing poly(vinylidene fluoride-chlorotrifluoroethylene) (P(VDF-CTFE-DB)) in total amorphous phase are employed as cross-linkable polymer matrix. α-SiC particles with a diameter of 500 nm are surface modified with 3-aminpropyltriethoxysilane (KH-550) as fillers for their comparable dielectric performance with PVDF polymer matrix, low conductivity, and high breakdown strength. The interface between SiC particles and PVDF matrix has been finely tailored, which leads to the significantly elevated dielectric constant from 10 to over 120 in SiC particles due to the strong induced polarization. As a result, a remarkably improved dielectric constant (ca. 70) has been observed in c-PVDF/m-SiC composites bearing 36 vol % SiC, which could be perfectly predicted by the effective medium approximation (EMA) model. The optimized interface and enhanced compatibility between two components are also responsible for the depressed conductivity and dielectric loss in the resultant composites. Chemical cross-linking constructed in the composites results in promising mechanical flexibility, good heat and chemical stability, and elevated tensile performance of the composites. Therefore, excellent dielectric and mechanical properties are finely balanced in the PVDF/α-SiC composites. This work might provide a facile and effective strategy to fabricate high-k dielectric composites with promising comprehensive performance. PMID:27377185

  13. Thin-ribbon tapered coupler for dielectric waveguides

    NASA Technical Reports Server (NTRS)

    Yeh, C.; Otoshi, T. Y.; Shimabukuro, F. I.

    1994-01-01

    A recent discovery shows that a high-dielectric constant, low-loss, solid material can be made into a ribbon-like waveguide structure to yield an attenuation constant of less than 0.02 dB/m for single-mode guidance of millimeter/submillimeter waves. One of the crucial components that must be invented in order to guarantee the low-loss utilization of this dielectric-waveguide guiding system is the excitation coupler. The traditional tapered-to-a-point coupler for a dielectric rod waveguide fails when the dielectric constant of the dielectric waveguide is large. This article presents a new way to design a low-loss coupler for a high- or low-dielectric constant dielectric waveguide for millimeter or submillimeter waves.

  14. Highly aligned graphene/polymer nanocomposites with excellent dielectric properties for high-performance electromagnetic interference shielding.

    PubMed

    Yousefi, Nariman; Sun, Xinying; Lin, Xiuyi; Shen, Xi; Jia, Jingjing; Zhang, Biao; Tang, Benzhong; Chan, Mansun; Kim, Jang-Kyo

    2014-08-20

    Nanocomposites that contain reinforcements with preferred orientation have attracted significant attention because of their promising applications in a wide range of multifunctional fields. Many efforts have recently been focused on developing facile methods for preparing aligned graphene sheets in solvents and polymers because of their fascinating properties including liquid crystallinity and highly anisotropic characteristics. Self-aligned in situ reduced graphene oxide (rGO)/polymer nanocomposites are prepared using an all aqueous casting method. A remarkably low percolation threshold of 0.12 vol% is achieved in the rGO/epoxy system owing to the uniformly dispersed, monolayer graphene sheets with extremely high aspect ratios (>30000). The self-alignment into a layered structure at above a critical filler content induces a unique anisotropy in electrical and mechanical properties due to the preferential formation of conductive and reinforcing networks along the alignment direction. Accompanied by the anisotropic electrical conductivities are exceptionally high dielectric constants of over 14000 with 3 wt% of rGO at 1 kHz due to the charge accumulation at the highly-aligned conductive filler/insulating polymer interface according to the Maxwell-Wagner-Sillars polarization principle. The highly dielectric rGO/epoxy nanocomposites with the engineered structure and properties present high performance electromagnetic interference shielding with a remarkable shilding efficiency of 38 dB. PMID:24715671

  15. A high performance humidity sensor based on dielectric detection with a novel coaxial nanostructure

    NASA Astrophysics Data System (ADS)

    Cai, Dong; Zhao, Huaizhou; Rizal, Binod; Kirkpatrick, Timothy; Ren, Zhifeng; Naughton, Michael J.; Chiles, Thomas C.

    2011-03-01

    High throughput coaxial nanocavity arrays are developed by overlaying porous Al 2 O3 and Al layers on vertically aligned carbon nanotube arrays. The porosity of Al 2 O3 was electrochemically characterized. The dielectric properties of the nanocoax structure were measured by impedance spectroscopy, from 10 mHz to 1 MHz. The capacitance of the sensor responded to humidity applied to the chip, i . e . soaking the array with water increased the capacitance by 130%. The detection mechanism was established for sensing changes to the dielectric constant due to adsorbed moisture in the porous Al 2 O3 coax annulus, with theoretical calculations based on~the Clausius-Mossotti equation~in agreement with the measurements.~ Highly sensitive humidity detection was demonstrated by applying relative humidity between 0.1% and 100%, with a power-law response, RH ~xα . This nanocoaxial structure thus offers the possibility of unprecedented performance of porous Al 2 O3 -mediated capacitancer sensing for humidity detection. The National Cancer Institute CA137681, the Department of Navy, the National Science Foundation PHY-0804718, and the Seaver Institute. Emails: caid@bc.edu; naughton@bc.edu

  16. Thermally Stable Siloxane Hybrid Matrix with Low Dielectric Loss for Copper-Clad Laminates for High-Frequency Applications.

    PubMed

    Kim, Yong Ho; Lim, Young-Woo; Kim, Yun Hyeok; Bae, Byeong-Soo

    2016-04-01

    We report vinyl-phenyl siloxane hybrid material (VPH) that can be used as a matrix for copper-clad laminates (CCLs) for high-frequency applications. The CCLs, with a VPH matrix fabricated via radical polymerization of resin blend consisting of sol-gel-derived linear vinyl oligosiloxane and bulky siloxane monomer, phenyltris(trimethylsiloxy)silane, achieve low dielectric constant (Dk) and dissipation factor (Df). The CCLs with the VPH matrix exhibit excellent dielectric performance (Dk = 2.75, Df = 0.0015 at 1 GHz) with stability in wide frequency range (1 MHz to 10 GHz) and at high temperature (up to 275 °C). Also, the VPH shows good flame resistance without any additives. These results suggest the potential of the VPH for use in high-speed IC boards. PMID:26982015

  17. Microwave dielectric properties of Ba(Zn1/3Ta2 / 3)O3 for application in high power waveguide window

    NASA Astrophysics Data System (ADS)

    Sindam, Bashaiah; Raju, K. C. James

    2016-04-01

    Higher dielectric constant, low dielectric loss and good transmission characteristics have been the goal for developing the ceramic waveguide window for high power window applications. The choice of materials having high k with low dielectric loss and reduced window size is key parameters to achieve maximum microwave transmission without unleashing microwave dissipation. The microwave dielectric properties of synthesized Ba(Zn1/3Ta2 / 3)O3 (BZT) ceramics have been studied for high power window applications. The structural studies are correlated with microwave dielectric properties of BZT. The maximum values of dielectric constant ɛr = 30, Q × f0 = 102 THz and near zero temperature coefficient of resonance frequency were obtained for BZT ceramics sintered at the temperature of 1550 °C for 4 h. The measured results are used to design a tapered transition from air filled waveguide to narrow (reduced width and height) dielectric filled waveguide using Heckens linear taper at a specific frequency. The simulation result shows that the lower reflection loss is obtained for the tapered transition of the narrow BZT window as compared to the standard waveguide BZT window. The return loss of -34 dB is obtained for S-band waveguide window with a bandwidth of 675 MHz. The return loss observed in the narrow BZT window is -46 dB with a bandwidth of 570 MHz at a center frequency of 3.63 GHz. Most of the disadvantages in conventional windows will be rectified using the design of the taper transion employing narrow waveguide window in high power applications. Contribution to the Topical Issue "Materials for Dielectric Applications", edited by Maciej Jaroszewski and Sabu Thomas.

  18. Correlation between band gap, dielectric constant, Young’s modulus and melting temperature of GaN nanocrystals and their size and shape dependences

    PubMed Central

    Lu, Haiming; Meng, Xiangkang

    2015-01-01

    With structural miniaturization down to the nanoscale, the detectable parameters of materials no longer remain constant but become tunable. For GaN nanocrystals example, the band gap increases while the dielectric constant, Young’s modulus and melting temperature decrease with decreasing the solid size. Herein, we developed the models to describe the size and shape dependences of these seemingly uncorrelated parameters for GaN nanocrystals, based on our established thermodynamic model for cohesive energy of metallic nanocrystals. Consistency between our theoretical predictions and the corresponding experimental or simulated results confirms the accuracy of the developed models and indicates the essentiality of cohesive energy in describing the effects of size and shape on the physicochemical properties of different low-dimensional systems. PMID:26582533

  19. Force Field Benchmark of Organic Liquids: Density, Enthalpy of Vaporization, Heat Capacities, Surface Tension, Isothermal Compressibility, Volumetric Expansion Coefficient, and Dielectric Constant

    PubMed Central

    2011-01-01

    The chemical composition of small organic molecules is often very similar to amino acid side chains or the bases in nucleic acids, and hence there is no a priori reason why a molecular mechanics force field could not describe both organic liquids and biomolecules with a single parameter set. Here, we devise a benchmark for force fields in order to test the ability of existing force fields to reproduce some key properties of organic liquids, namely, the density, enthalpy of vaporization, the surface tension, the heat capacity at constant volume and pressure, the isothermal compressibility, the volumetric expansion coefficient, and the static dielectric constant. Well over 1200 experimental measurements were used for comparison to the simulations of 146 organic liquids. Novel polynomial interpolations of the dielectric constant (32 molecules), heat capacity at constant pressure (three molecules), and the isothermal compressibility (53 molecules) as a function of the temperature have been made, based on experimental data, in order to be able to compare simulation results to them. To compute the heat capacities, we applied the two phase thermodynamics method (Lin et al. J. Chem. Phys.2003, 119, 11792), which allows one to compute thermodynamic properties on the basis of the density of states as derived from the velocity autocorrelation function. The method is implemented in a new utility within the GROMACS molecular simulation package, named g_dos, and a detailed exposé of the underlying equations is presented. The purpose of this work is to establish the state of the art of two popular force fields, OPLS/AA (all-atom optimized potential for liquid simulation) and GAFF (generalized Amber force field), to find common bottlenecks, i.e., particularly difficult molecules, and to serve as a reference point for future force field development. To make for a fair playing field, all molecules were evaluated with the same parameter settings, such as thermostats and barostats

  20. Coaxial probe and apparatus for measuring the dielectric spectra of high pressure liquids and supercritical fluid mixtures

    NASA Astrophysics Data System (ADS)

    Lee, Sung B.; Smith, Richard L.; Inomata, Hiroshi; Arai, Kunio

    2000-11-01

    A probe and apparatus were developed for measuring the dielectric spectra (complex permittivity) of high pressure liquids and supercritical fluid mixtures. The probe consisted a 2.2 mm semirigid coaxial cable that was cut off flat and mounted into a high pressure tube. The apparatus for measuring complex permittivity consisted of the dielectric probe, cell, densimeter, piston for varying the system density at constant composition, and magnetic pump for agitation and recirculation, all of which were housed in a constant temperature air bath. The probe is simple, robust, inexpensive, and further, its design allows for quick connection to high pressure systems. Probe accuracy is estimated to be ±0.5 in ɛ' and ±0.5 in ɛ″ from 200 MHz to 18 GHz based on replicate measurements of calibration and 2σ deviations over the interval. Dielectric spectra were measured over the 200 MHz-20 GHz range for methanol+carbon dioxide mixture at 323.2 K and a pressures up to 18 MPa.

  1. Dielectric constant tunability at microwave frequencies and pyroelectric behavior of lead-free submicrometer-structured (Bi0.5Na0.5)1-xBaxTiO3 ferroelectric ceramics.

    PubMed

    Martínez, Félix L; Hinojosa, Juan; Doménech, Ginés; Fernández-Luque, Francisco J; Zapata, Juan; Ruiz, Ramon; Pardo, Lorena

    2013-08-01

    In this article, we show that the dielectric constant of lead-free ferroelectric ceramics based on the solid solution (1-x)(Bi(0.5)Na(0.5))TiO(3)-xBaTiO(3), with compositions at or near the morphotropic phase boundary (MPB), can be tuned by a local applied electric field. Two compositions have been studied, one at the MPB, with x = 0.06 (BNBT6), and another one nearer the BNT side of the phase diagram, with x = 0.04 (BNBT4). The tunability of the dielectric constant is measured at microwave frequencies between 100 MHz and 3 GHz by a nonresonant method and simultaneously applying a dc electric field. As expected, the tunability is higher for the composition at the MPB (BNBT6), reaching a maximum value of 60% for an electric field of 900 V/cm, compared with the composition below this boundary (BNBT4), which saturates at 40% for an electric field of 640 V/cm. The high tunability in both cases is attributed to the fine grain and high density of the samples, which have a submicrometer homogeneous grain structure with grain size of the order of a few hundred nanometers. Such properties make these ceramics attractive for microwave tunable devices. Finally, we have tested these ceramics for their application as infrared pyroelectric detectors and we have found that the pyroelectric figure of merit is comparable to traditional lead-containing pyroelectrics. PMID:25004530

  2. (abstract) Characterization of Tree Water Status and Dielectric Constant Changes of North American Boreal Forests in Combination with Synthetic Aperture Radar Remote Sensing

    NASA Technical Reports Server (NTRS)

    McDonald, K. C.; Zimmerman, R.; Way, J. B.

    1994-01-01

    The occurrence and magnitude of temporal and spatial tree water status changes in the boreal environment were studied in a floodplain forest in Alaska and in four forest types of Central Canada. Under limited water supply conditions from the rooted soil zone in early spring (freeze/thaw transition) and during summer, trees show declining water potentials. Coincidental change in tree water potential, tree transpiration and tree dielectric constant had been observed in previous studies performed in Mediterranean ecotones. If radar is sensitive to chances in tree water status as reflected through changes in dielectric constant, then radar remote sensing could be used to monitor the water status of forests. The SAR imagery is examined to determine the response of the radar backscatter to the ground based observations of the water status of forest canopies. Comparisons are made between stands and also along the large North-South gradient between sites. Data from SAR are used to examine the radar response to canopy physiological state as related to vegetation freeze/thaw and growing season length.

  3. Compact double-p slotted inset-fed microstrip patch antenna on high dielectric substrate.

    PubMed

    Ahsan, M R; Islam, M T; Habib Ullah, M; Mahadi, W N L; Latef, T A

    2014-01-01

    This paper presents a compact sized inset-fed rectangular microstrip patch antenna embedded with double-P slots. The proposed antenna has been designed and fabricated on ceramic-PTFE composite material substrate of high dielectric constant value. The measurement results from the fabricated prototype of the antenna show -10 dB reflection coefficient bandwidths of 200 MHz and 300 MHz with center resonant frequency of 1.5 GHz and 4 GHz, respectively. The fabricated antenna has attained gains of 3.52 dBi with 81% radiation efficiency and 5.72 dBi with 87% radiation efficiency for lower band and upper band, respectively. The measured E- and H-plane radiation patterns are also presented for better understanding. Good agreement between the simulation and measurement results and consistent radiation patterns make the proposed antenna suitable for GPS and C-band applications. PMID:25165750

  4. A new analytical threshold voltage model for symmetrical double-gate MOSFETs with high- k gate dielectrics

    NASA Astrophysics Data System (ADS)

    Chiang, T. K.; Chen, M. L.

    2007-03-01

    Based on the fully two-dimensional (2D) Poisson's solution in both silicon film and insulator layer, a compact and analytical threshold voltage model, which accounts for the fringing field effect of the short channel symmetrical double-gate (SDG) MOSFETs, has been developed. Exploiting the new model, a concerned analysis combining FIBL-enhanced short-channel effects and high- k gate dielectrics assess their overall impact on SDG MOSFET's scaling. It is found that for the same equivalent oxide thickness, the gate insulator with high- k dielectric constant which keeps a great characteristic length allows less design space than SiO 2 to sustain the same FIBL induced threshold voltage degradation.

  5. Long-range surface plasmons in dielectric-metal-dielectric structure with highly anisotropic substrates

    NASA Astrophysics Data System (ADS)

    Nagaraj; Krokhin, A. A.

    2010-02-01

    We present a theoretical study of long-range surface plasmons propagating in a thin metallic film clad between two identical uniaxial anisotropic dielectric crystals. We show that the proper orientation of the optical axis of the crystal with respect to the metal surface enhances the propagation length of surface plasmons. Since the proper orientation depends on surface plasmon frequency, we give the results for the propagation length in a wide range of frequencies, including the telecommunication region. To increase the role of anisotropy, we consider artificial substrates from photonic crystals, which possess an order of magnitude stronger anisotropy than the natural optical crystals. We propose Kronig-Penney model for plasmonic crystal where the substrate is a periodic sequence of dielectric delta peaks. In this model the dispersion relation for surface plasmon has a band structure where the band width tends to zero when the frequency approaches the resonant frequency.

  6. Noninvasive quantitative mapping of conductivity and dielectric distributions using RF wave propagation effects in high-field MRI

    NASA Astrophysics Data System (ADS)

    Wen, Han

    2003-06-01

    In this paper I show with phantom and animal experiments a non-invasive and quantitative method for measuring the conductivity and dielectric distributions based on high field magnetic resonance imaging. High field MRI is accompanied by significant RF wave propagation effects. They are observed as phase and magnitude variations of the image that cannot be removed by optimizing the static field homogeneity, or by improving the RF coils. These variations reflect the RF field distribution in the sample, and in fact obey a modified Helmholtz equation. By mapping both the phase and magnitude of the field with MRI techniques, both the conductivity and the dielectric constant are determined non-invasively. In phantom experiments at 1.5 tesla, conductivity values were measured at 4 mm resolution to 0.5 S/m accuracy. At 4.7 tesla, the accuracy was improved to 0.2 S/m, and the dielectric constant was measured to an accuracy of 5 (relative to vacuum) for 2cm regions.

  7. Dielectric constant and ordering effects of pure and doped KTaO3 quantum paraelectric; Cu-codoping enhancement effect

    NASA Astrophysics Data System (ADS)

    Trepakov, V. A.; Savinov, M. E.; Vikhnin, V. S.; Jastrabik, L.; Kapphan, S.; Syrnikov, P. P.

    ɛ'(T, f) and tan[δ(T, f)] spectra (10-300 K, 120 Hz-1 MHz) of pure KTaO3 (KTO), KTO: Li (0.1-3%), KTO: Fe 1%, KTO: Cu 0.83% below 70 K reveal a Debye-like universal Arrhenius relaxation with Δ ≈ 80-85 meV, τ0 ˜ 5 × 10-14s. In KTO: Li + Fe and KTO: Li + Cu this contribution increases, confirming dipole-pair ordering effects with the leading role of Li+ in pair relaxation (V. Trepakov et al., J. Phys.: Condens. Matter 7, 3785 (1995)). A dramatic Cu-codoping dielectric enhancement effect in KTO: Li + Cu was observed. In KTO: Li 3% + Cu 0.2% in region 50-60 K ɛ'(T) reveals a maximum of ˜ 105, accompanied by temperature hysteresis and dielectric loops. Ferroelectric-type phase transition with a critical dynamic central peak, induced by Cu2+(Ta)-VO centers as a slowest relaxator or oscillator in KTO: Li, is considered as an ɛ' enhancement cause. A possibility of incommensurate phase induced by Cu2+-VO centers and cluster-induced cooperative behavior is discussed too.

  8. Electric field modulation of the band gap, dielectric constant and polarizability in SnS atomically thin layers

    NASA Astrophysics Data System (ADS)

    Pan, Longfei; Zou, Bingsuo; Shi, Li-Jie

    2016-06-01

    The band structure and dielectric properties of multilayer SnS films have been investigated by density-functional theory total-energy calculations. It shows that electric field can tune the band gap of SnS multilayer and induce a phase transition from semiconductor to semi-metal. The critical electric field of phase transition for SnS bilayer is 0.09 V/Å, which is lower than MoS2(0.3 V/Å), MoSe2(0.25 V/Å), MoTe2(0.2 V/Å), WS2(0.27 V/Å) and WSe2(0.20 V/Å). Combining the electric structure with dielectric properties, we explain the reason why multilayer SnS films are more sensitive to the electric field. The sensitive response character to electric field makes SnS multilayer as a potential material for the nano-electronic and nano-optical devices.

  9. Leaky surface electromagnetic waves on a high-index dielectric grating.

    PubMed

    Maradudin, A A; Simonsen, I; Zierau, W

    2016-05-15

    We show theoretically that the periodically corrugated surface of a high-index dielectric medium can support a leaky surface electromagnetic wave. This wave is bound to the surface in the vacuum, but radiates into the dielectric. Despite this radiative damping, the surface wave can have a long lifetime. PMID:27176969

  10. High-Temperature Slow Crack Growth of Silicon Carbide Determined by Constant-Stress-Rate and Constant-Stress Testing

    NASA Technical Reports Server (NTRS)

    Choi, Sung H.; Salem, J. A.; Nemeth, N. N.

    1998-01-01

    High-temperature slow-crack-growth behaviour of hot-pressed silicon carbide was determined using both constant-stress-rate ("dynamic fatigue") and constant-stress ("static fatigue") testing in flexure at 1300 C in air. Slow crack growth was found to be a governing mechanism associated with failure of the material. Four estimation methods such as the individual data, the Weibull median, the arithmetic mean and the median deviation methods were used to determine the slow crack growth parameters. The four estimation methods were in good agreement for the constant-stress-rate testing with a small variation in the slow-crack-growth parameter, n, ranging from 28 to 36. By contrast, the variation in n between the four estimation methods was significant in the constant-stress testing with a somewhat wide range of n= 16 to 32.

  11. High dielectric loss and its monotonic dependence of conducting-dominated multiwalled carbon nanotubes/silica nanocomposite on temperature ranging from 373 to 873 K in X-band

    NASA Astrophysics Data System (ADS)

    Song, Wei-Li; Cao, Mao-Sheng; Hou, Zhi-Ling; Fang, Xiao-Yong; Shi, Xiao-Ling; Yuan, Jie

    2009-06-01

    The dielectric properties of multiwalled carbon nanotubes/silica (MWNTs/SiO2) nanocomposite with 10 wt % MWNTs are investigated in the temperature range of 373-873 K at frequencies between 8.2 and 12.4 GHz (X-band). MWNTs/SiO2 exhibits a high dielectric loss and a positive temperature coefficient (PTC) of dielectric effect that complex permittivity increases monotonically with increasing temperature. The PTC effect on the dielectric constant is ascribed to the decreased relaxation time of interface charge polarization, and the PTC effect on the dielectric loss is mainly attributed to the increasing electrical conductivity. The loss tangent strongly supports the dominating contribution of conductance to the dielectric loss.

  12. High throughput exploration of ZrxSi1 - xO2 dielectrics by evolutionary first-principles approaches

    NASA Astrophysics Data System (ADS)

    Zhang, Jin; Zeng, Qingfeng; Oganov, Artem R.; Dong, Dong; Liu, Yunfang

    2014-11-01

    The high throughput approaches aim to discover, screen and optimize materials in a cost-effective way and to shorten their time-to-market. However, computational approaches typically involve a combinatorial explosion problem, to deal with which, we adopted hybrid evolutionary algorithms together with first-principle calculations to explore possible stable and metastable crystal structures of ZrO2-SiO2 dielectrics. The calculation reproduced two already known structures (I41 / amd-ZrSiO4 and I41 / a-ZrSiO4) and predicted two new thermodynamically metastable structures Zr3SiO8 (P 4 bar 3 m) and ZrSi2O6 (P 3 bar 1 m). At ambient pressure, the only thermodynamically stable zirconium silicate is I41 / amd-ZrSiO4 (zircon). Dynamical stability of the new phases has been verified by phonon calculations, and their static dielectric constants are higher than that of the known phases of ZrSiO4. Band structure, density of state, electron localization function and Bader charges are presented and discussed. The new metastable structures are insulators with the DFT band gaps of 3.65 and 3.52 eV, respectively. Calculations show that P 4 bar 3 m-Zr3SiO8 has high dielectric constant (∼20.7), high refractive index (∼2.4) and strong dispersion of light. Global optimization of the dielectric fitness (electric energy density) shows that among crystalline phases of ZrO2-SiO2, maximum occurs for I41 / a-ZrSiO4.

  13. Analysis of the Dielectric constant of saline-alkali soils and the effect on radar backscattering coefficient: a case study of soda alkaline saline soils in Western Jilin Province using RADARSAT-2 data.

    PubMed

    Li, Yang-yang; Zhao, Kai; Ren, Jian-hua; Ding, Yan-ling; Wu, Li-li

    2014-01-01

    Soil salinity is a global problem, especially in developing countries, which affects the environment and productivity of agriculture areas. Salt has a significant effect on the complex dielectric constant of wet soil. However, there is no suitable model to describe the variation in the backscattering coefficient due to changes in soil salinity content. The purpose of this paper is to use backscattering models to understand behaviors of the backscattering coefficient in saline soils based on the analysis of its dielectric constant. The effects of moisture and salinity on the dielectric constant by combined Dobson mixing model and seawater dielectric constant model are analyzed, and the backscattering coefficient is then simulated using the AIEM. Simultaneously, laboratory measurements were performed on ground samples. The frequency effect of the laboratory results was not the same as the simulated results. The frequency dependence of the ionic conductivity of an electrolyte solution is influenced by the ion's components. Finally, the simulated backscattering coefficients measured from the dielectric constant with the AIEM were analyzed using the extracted backscattering coefficient from the RADARSAT-2 image. The results show that RADARSAT-2 is potentially able to measure soil salinity; however, the mixed pixel problem needs to be more thoroughly considered. PMID:25101317

  14. Analysis of the Dielectric Constant of Saline-Alkali Soils and the Effect on Radar Backscattering Coefficient: A Case Study of Soda Alkaline Saline Soils in Western Jilin Province Using RADARSAT-2 Data

    PubMed Central

    Li, Yang-yang; Zhao, Kai; Ren, Jian-hua; Ding, Yan-ling; Wu, Li-li

    2014-01-01

    Soil salinity is a global problem, especially in developing countries, which affects the environment and productivity of agriculture areas. Salt has a significant effect on the complex dielectric constant of wet soil. However, there is no suitable model to describe the variation in the backscattering coefficient due to changes in soil salinity content. The purpose of this paper is to use backscattering models to understand behaviors of the backscattering coefficient in saline soils based on the analysis of its dielectric constant. The effects of moisture and salinity on the dielectric constant by combined Dobson mixing model and seawater dielectric constant model are analyzed, and the backscattering coefficient is then simulated using the AIEM. Simultaneously, laboratory measurements were performed on ground samples. The frequency effect of the laboratory results was not the same as the simulated results. The frequency dependence of the ionic conductivity of an electrolyte solution is influenced by the ion's components. Finally, the simulated backscattering coefficients measured from the dielectric constant with the AIEM were analyzed using the extracted backscattering coefficient from the RADARSAT-2 image. The results show that RADARSAT-2 is potentially able to measure soil salinity; however, the mixed pixel problem needs to be more thoroughly considered. PMID:25101317

  15. Structural, Dielectric, and Interface Properties of Crystalline Barium Silicate Films on Si(100): A Robust High-κ Material

    NASA Astrophysics Data System (ADS)

    Islam, S.; Hofmann, K. R.; Feldhoff, A.; Pfnür, H.

    2016-05-01

    The quality and crystallinity of ultrathin dielectric layers depend crucially on the details of interface formation and chemical stability. Using a combination of photoelectron (XPS) and electron-energy-loss spectroscopy, low-energy electron-diffraction, and transmission electron microscopy (TEM), we show that crystalline epitaxial layers of Ba2 SiO4 can be grown on Si(100) substrates from evaporated Ba in oxygen background atmosphere at 650 °C . Since the silicate is chemically by far more stable than the oxides of Si and Ba, an atomically sharp interface with no interface oxide is formed, as confirmed by XPS and TEM. However, the interface is rough on the atomic scale. dc and frequency-dependent electrical measurements reveal a relative dielectric constant of 22.8, low hysteresis in C V measurements, and low leakage currents but still fairly high interface trap densities.

  16. Structural and electrical properties of thin SrHfON films for high-k gate dielectric

    SciTech Connect

    Feng Liping; Liu Zhengtang

    2009-06-22

    Thin SrHfON films were prepared by reactive cosputtering of Hf-O and Sr-O targets in Ar/N{sub 2} ambient environment. Structural and electrical properties of the as-deposited and annealed SrHfON films used as gate dielectrics have been investigated. The SrHfON films have crystallization temperature higher than 900 deg. C. After annealing at 900 deg. C, high dielectric constant of 19.3 and effective work function of 4.13 eV was obtained for the SrHfON films. It is worth mentioning that the leakage current density of Au/SrHfON/IL SiO{sub x} gate stack is two orders of magnitude lower than that of polycrystalline silicon/HfO{sub 2} structure.

  17. High temperature stability of the dielectric and insulating properties of Ca(Ti, Zr)SiO5 ceramics

    NASA Astrophysics Data System (ADS)

    Kimura, Junichi; Taniguchi, Hiroki; Iijima, Takashi; Shimizu, Takao; Yasui, Shintaro; Itoh, Mitsuru; Funakubo, Hiroshi

    2016-02-01

    Useful dielectric properties for high-temperature ceramic capacitors are demonstrated in a non-perovskite oxide, Ca(Ti0.85 Zr0.15)SiO5, which is mainly composed of one-dimensional chains of oxygen octahedra that are mutually linked by SiO4 tetrahedra. Its dielectric constant and low temperature coefficient of capacitance were found to be 43 and -102 ppm/K, respectively, over the wide temperature range of 300-780 K. The high insulating performance was also indicated by the high resistivity, exceeding 1011 Ω cm up to 523 K. The systematic dielectric measurements for Ca(Ti1-x Zrx)SiO5 as functions of the composition and temperature indicate that the suppression of the anti-ferroelectric phase transition of CaTiSiO5 by Zr4+-substitution is a key to improve the temperature-stability and the high-resistivity in Ca(Ti1-x Zrx)SiO5. The present results shed light on the development of a designing principle for ceramic capacitors for the high-temperature use.

  18. Physical aspects of 0-3 dielectric composites

    NASA Astrophysics Data System (ADS)

    Zhang, Lin; Bass, Patrick; Cheng, Z.-Y.

    2015-05-01

    0-3 dielectric composites with high dielectric constants have received great interest for various technological applications. Great achievements have been made in the development of high performance of 0-3 composites, which can be classified into dielectric-dielectric (DDCs) and conductor-dielectric composites (CDCs). However, predicting the dielectric properties of a composite is still a challenging problem of both theoretical and practical importance. Here, the physical aspects of 0-3 dielectric composites are reviewed. The limitation of current understanding and new developments in the physics of dielectric properties for dielectric composites are discussed. It is indicated that the current models cannot explain well the physical aspects for the dielectric properties of 0-3 dielectric composites. For the CDCs, experimental results show that there is a need to find new equations/models to predict the percolative behavior incorporating more parameters to describe the behavior of these materials. For the DDCs, it is indicated that the dielectric loss of each constituent has to be considered, and that it plays a critical role in the determination of the dielectric response of these types of composites. The differences in the loss of the constituents can result in a higher dielectric constant than both of the constituents combined, which breaks the Wiener limits.

  19. High-dose neutron irradiation performance of dielectric mirrors

    SciTech Connect

    Nimishakavi Anantha Phani Kiran Kumar; Leonard, Keith J.; Jellison, Jr., Gerald Earle; Snead, Lance Lewis

    2015-05-01

    The study presents the high-dose behavior of dielectric mirrors specifically engineered for radiation-tolerance: alternating layers of Al2O3/SiO2 and HfO2/SiO2 were grown on sapphire substrates and exposed to neutron doses of 1 and 4 dpa at 458 10K in the High Flux Isotope Reactor (HFIR). In comparison to previously reported results, these higher doses of 1 and 4 dpa results in a drastic drop in optical reflectance, caused by a failure of the multilayer coating. HfO2/SiO2 mirrors failed completely when exposed to 1 dpa, whereas the reflectance of Al2O3/SiO2 mirrors reduced to 44%, eventually failing at 4 dpa. Transmission electron microscopy (TEM) observation of the Al2O3/SiO2 specimens showed SiO2 layer defects which increases size with irradiation dose. The typical size of each defect was 8 nm in 1 dpa and 42 nm in 4 dpa specimens. Buckling type delamination of the interface between the substrate and first layer was typically observed in both 1 and 4 dpa HfO2/SiO2 specimens. Composition changes across the layers were measured in high resolution scanning-TEM mode using energy dispersive spectroscopy. A significant interdiffusion between the film layers was observed in Al2O3/SiO2 mirror, though less evident in HfO2/SiO2 system. Lastly, the ultimate goal of this work is the provide insight into the radiation-induced failure mechanisms of these mirrors.

  20. High-dose neutron irradiation performance of dielectric mirrors

    DOE PAGESBeta

    Nimishakavi Anantha Phani Kiran Kumar; Leonard, Keith J.; Jellison, Jr., Gerald Earle; Snead, Lance Lewis

    2015-05-01

    The study presents the high-dose behavior of dielectric mirrors specifically engineered for radiation-tolerance: alternating layers of Al2O3/SiO2 and HfO2/SiO2 were grown on sapphire substrates and exposed to neutron doses of 1 and 4 dpa at 458 10K in the High Flux Isotope Reactor (HFIR). In comparison to previously reported results, these higher doses of 1 and 4 dpa results in a drastic drop in optical reflectance, caused by a failure of the multilayer coating. HfO2/SiO2 mirrors failed completely when exposed to 1 dpa, whereas the reflectance of Al2O3/SiO2 mirrors reduced to 44%, eventually failing at 4 dpa. Transmission electron microscopymore » (TEM) observation of the Al2O3/SiO2 specimens showed SiO2 layer defects which increases size with irradiation dose. The typical size of each defect was 8 nm in 1 dpa and 42 nm in 4 dpa specimens. Buckling type delamination of the interface between the substrate and first layer was typically observed in both 1 and 4 dpa HfO2/SiO2 specimens. Composition changes across the layers were measured in high resolution scanning-TEM mode using energy dispersive spectroscopy. A significant interdiffusion between the film layers was observed in Al2O3/SiO2 mirror, though less evident in HfO2/SiO2 system. Lastly, the ultimate goal of this work is the provide insight into the radiation-induced failure mechanisms of these mirrors.« less

  1. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    SciTech Connect

    Gao, Tao; Xu, Ruimin; Kong, Yuechan Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

    2015-06-15

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

  2. Toward Automated Benchmarking of Atomistic Force Fields: Neat Liquid Densities and Static Dielectric Constants from the ThermoML Data Archive.

    PubMed

    Beauchamp, Kyle A; Behr, Julie M; Rustenburg, Ariën S; Bayly, Christopher I; Kroenlein, Kenneth; Chodera, John D

    2015-10-01

    Atomistic molecular simulations are a powerful way to make quantitative predictions, but the accuracy of these predictions depends entirely on the quality of the force field employed. Although experimental measurements of fundamental physical properties offer a straightforward approach for evaluating force field quality, the bulk of this information has been tied up in formats that are not machine-readable. Compiling benchmark data sets of physical properties from non-machine-readable sources requires substantial human effort and is prone to the accumulation of human errors, hindering the development of reproducible benchmarks of force-field accuracy. Here, we examine the feasibility of benchmarking atomistic force fields against the NIST ThermoML data archive of physicochemical measurements, which aggregates thousands of experimental measurements in a portable, machine-readable, self-annotating IUPAC-standard format. As a proof of concept, we present a detailed benchmark of the generalized Amber small-molecule force field (GAFF) using the AM1-BCC charge model against experimental measurements (specifically, bulk liquid densities and static dielectric constants at ambient pressure) automatically extracted from the archive and discuss the extent of data available for use in larger scale (or continuously performed) benchmarks. The results of even this limited initial benchmark highlight a general problem with fixed-charge force fields in the representation low-dielectric environments, such as those seen in binding cavities or biological membranes. PMID:26339862

  3. Dual electron-phonon coupling model for gigantic photoenhancement of the dielectric constant and electronic conductivity in SrTi O3

    NASA Astrophysics Data System (ADS)

    Qiu, Y.; Wu, C. Q.; Nasu, K.

    2005-12-01

    In connection with the recent experimental discovery on photoenhancements of the electronic conductivity and the quasi-static electric susceptibility in SrTiO3 , we theoretically study a photogeneration mechanism of charged and conductive ferroelectric domains in this perovskite type quantum dielectric. The photo-generated electron, being quite itinerant in the 3d band of Ti4+ , is assumed to couple weakly but quadratically with soft-anharmonic T1u phonons in this quantum dielectric, in view of the parity of this lattice vibration. The photo-generated electron is also assumed to couple strongly but linearly with the breathing type high energy phonons. Using a tight-binding model for electrons, we will show that this dual electron-phonon coupling results in two types of polarons, a “super-para-electric (SPE) large polaron” with a quasi-globle parity violation, and an “off-center type self-trapped polaron” with only a local parity violation. This SPE large polaron is shown to be equal to a singly charged (e-) and conductive ferroelectric domain with a quasi-macroscopic range. Two of such large polarons are shown to aggregate and form an SPE large bipolaron, which is still conductive. Various other bipolaron clusters are also shown to be formed in this electron-phonon coupled system. These large polarons have a high mobility and an enhanced quasi-static dielectric susceptibility. Effect of adulteration is also discussed.

  4. Bulk-phase thermodynamic properties and dielectric constant of ethanol: an ab initio quantum mechanical approach combined with a statistical model

    NASA Astrophysics Data System (ADS)

    Pandey, Prasenjit; Chakraborty, Tanmoy; Mukherjee, Asok K.

    2013-10-01

    Ab initio theory at the HF/6-311G(d,p) level has been used to compute the hydrogen bonding thermodynamics in bulk liquid ethanol. Inter-cluster hydrogen bonding is assumed to mimic the H-bonding in bulk ethanol. Rotation of the clusters has been neglected, but translational and vibrational motions are taken into account for calculating bulk thermodynamic parameters. Results are well in agreement with an earlier report [J. Chem. Phys. 116, 4212 (2002)]. For a more accurate dipole moment of monomer, MP2/6-311++G(d,p) calculation was done. Use of the computed thermodynamic data in a statistical model yields the Kirkwood-Frohlich correlation factor and the dielectric constant of ethanol (21.0) close to the experimental value, 24.3 at 298 K.

  5. Direct preparation of high quality graphene on dielectric substrates.

    PubMed

    Chen, Xin; Wu, Bin; Liu, Yunqi

    2016-04-21

    Graphene, an amazing two-dimensional material with excellent physical properties, has attracted great attention in various disciplines. Both fundamental studies and applications require graphene samples with controlled parameters including their quality, size, crystallinity, layer number and so on. While graphene can be prepared by direct exfoliation from mother materials or growth on transition metals, the uncontrolled production or the additional complex transfer process has been challenging for graphene applications. Direct preparation on a desired dielectric substrate is an important research direction that potentially addresses these problems. Many advances have been made in the past few years, and this tutorial review provides a brief summary of ways of preparing graphene on dielectric substrates. Various methods including the annealing method, direct chemical vapor deposition graphene synthesis on conventional dielectric substrates and hexagonal boron nitride layers are systematically reviewed and discussed. The main problems and further directions in this field are also presented. PMID:26847929

  6. Propagation of surface plasmons on highly anisotropic dielectric substrates

    NASA Astrophysics Data System (ADS)

    Nagaraj, Nagaraj; Krokhin, Arkadii

    2011-03-01

    We calculate the propagation length of surface plasmons in dielectric-metal-dielectric structures with anisotropic substrates. We show that the proper orientation of the optical axis of the crystal with respect to the metal surface minimizes Joule losses enhancing the propagation length of surface plasmons. The propagation length in a wide range of frequencies including the telecommunications region is analyzed. A simple Kronig-Penney model for anisotropic plasmonic crystal where the substrate is a periodic sequence of dielectric delta-peaks is also proposed. In this model the dispersion relation for surface plasmon has a band structure where the band width tends to zero when the frequency approaches the resonant frequency. This work was supported by the US Department of Energy through Grant No. DE-FG02-06ER46312.

  7. Conduction mechanism and dielectric relaxation in high dielectric KxTiyNi1-x-yO

    NASA Astrophysics Data System (ADS)

    Jana, Pradip Kumar; Sarkar, Sudipta; Karmakar, Shilpi; Chaudhuri, B. K.

    2007-10-01

    Complex impedance spectroscopic study has been made to elucidate the conductivity mechanism and dielectric relaxations in a low loss giant dielectric (ɛ'˜104) KxTiyNi1-x-yO (KTNO) system with x =0.05-0.30 and y =0.02 over a wide temperature range (200-400K). Below ambient temperature (300K), dc conductivity follows variable range hopping mechanism. The estimated activation energy for dielectric relaxation is found to be higher than the corresponding polaron hopping energy, which is attributed to the combined effect of K-doped grains and highly disordered grain boundary (GB) contributions in KTNO. Observed sharp fall of ɛ' below ˜270K is ascribed to the freezing of charge carriers. Comparatively lower value of relaxation time distribution parameter β of KTNO than that of the CaCu3Ti4O12 (CCTO) system reveals more disorder in KTNO. It is also found that KTNO is structurally more stable compared to the CCTO system, both having giant ɛ' value.

  8. Effects of He (90%)/H{sub 2} (10%) plasma treatment on electric properties of low dielectric constant SiCOH films

    SciTech Connect

    Kim, Hoonbae; Ha, Myung Hoon; Jung, Donggeun; Chae, Heeyeop; Kim, Hyoungsub

    2012-10-15

    In microelectronics industry, integration of the low dielectric constant (low-k) material films is a continuing issue due to the decreasing device feature size. To improve electric properties, various post-deposition treatments of the low-k material films can be used. In this work, we used room temperature treatment of He/H{sub 2} plasma and investigated the effects of plasma treatment on the electrical properties of low-k SiOCH films. Plasma treatment time changed from 300 to 1800 s. After treatment, the dielectric constant was decreased from 2.9 to 2.48, and the thickness of the low-k SiCOH films changed by only ∼5%. The leakage current densities of the low-k SiCOH films were decreased to ∼10{sup −11} A/cm{sup 2}, with treatment time ≥600 s. The breakdown occurred only around 2 V for films plasma-treated for 600 and 900 s. However, for 1800 s treatment time, the breakdown voltage was enhanced dramatically and breakdown occurred at applied voltage higher than 40 V. The surface composition change of the films after treatment was investigated by X-ray photoelectron spectroscopy (XPS). As the plasma treatment time was increased, the intensities of C-C/C-H and C-Si peaks were decreased while the intensities of Si-O and C-O peaks were increased. It is thought that increase of oxygen content of the SiCOH film, after plasma treatment, contributed to leakage current reduction and breakdown voltage increase.

  9. Low temperature solution processed high-κ ZrO2 gate dielectrics for nanoelectonics

    NASA Astrophysics Data System (ADS)

    Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara

    2016-05-01

    The high-κ gate dielectrics, specifically amorphous films offer salient features such as exceptional mechanical flexibility, smooth surfaces and better uniformity associated with low leakage current density. In this work, ∼35 nm thick amorphous ZrO2 films were deposited on silicon substrate at low temperature (300 °C, 1 h) from facile spin-coating method and characterized by various analytical techniques. The X-ray diffraction and X-ray photoelectron spectroscopy reveal the formation of amorphous phase ZrO2, while ellipsometry analysis together with the Atomic Force Microscope suggest the formation of dense film with surface roughness of 1.5 Å, respectively. The fabricated films were integrated in metal-oxide-semiconductor (MOS) structures to check the electrical capabilities. The oxide capacitance (Cox), flat band capacitance (CFB), flat band voltage (VFB), dielectric constant (κ) and oxide trapped charges (Qot) extracted from high frequency (1 MHz) C-V curve are 186 pF, 104 pF, 0.37 V, 15 and 2 × 10-11 C, respectively. The small flat band voltage 0.37 V, narrow hysteresis and very little frequency dispersion between 10 kHz-1 MHz suggest an excellent a-ZrO2/Si interface with very less trapped charges in the oxide. The films exhibit a low leakage current density 4.7 × 10-9 A/cm2 at 1 V. In addition, the charge transport mechanism across the MOSC is analyzed and found to have a strong bias dependence. The space charge limited conduction mechanism is dominant in the high electric field region (1.3-5 V) due to the presence of traps, while the trap-supported tunneling is prevailed in the intermediate region (0.35-1.3 V). Low temperature solution processed ZrO2 thin films obtained are of high quality and find their importance as a potential dielectric layer on Si and polymer based flexible electronics.

  10. Advances for dielectric elastomer generators: Replacement of high voltage supply by electret

    NASA Astrophysics Data System (ADS)

    Jean-Mistral, C.; Vu Cong, T.; Sylvestre, A.

    2012-10-01

    Dielectric generators require an external circuit with a high bias voltage source to polarize them. To drastically reduce this circuit and to avoid external polarization, we propose here original transducers combining electrets and dielectric elastomer. Two operating modes have been studied and electromechanical analytical models have been developed from the combination of electrets theory and dielectric model. These concepts are applied on e-textile application: scavenging energy during human motion. An energy density around 6 mJ g-1 is expected on an optimal load of 10 MΩ. More generally, the flexibility, the lightness, the absence of high-voltage supply open many fields of applications beyond e-textiles.

  11. Tb{sub 2}O{sub 3} thin films: An alternative candidate for high-k dielectric applications

    SciTech Connect

    Gray, Nathan W.; Prestgard, Megan C.; Tiwari, Ashutosh

    2014-12-01

    We are reporting the growth and structural, optical, and dielectric properties of Tb{sub 2}O{sub 3}, a relatively unexplored high-k dielectric material. A pulsed-laser deposition technique was used to grow Tb{sub 2}O{sub 3} thin-films on four different substrates: Si(100), SrTiO{sub 3}(100), LaAlO{sub 3}(100), and MgO(100). High-resolution X-ray diffraction and transmission electron microscopy results confirmed that film growth in an oxygen-rich (10{sup −1 }Torr) environment yields nearly single-crystal C-phase films, while a low-oxygen (10{sup −6 }Torr) environment growth results in the formation of monoclinic polycrystalline B-phase films. Optical transmission measurements showed that the bandgap of Tb{sub 2}O{sub 3} is direct in nature with a value of 2.8 eV and 3.4 eV for the cubic and monoclinic phases, respectively. By measuring the capacitance of test devices, quite high dielectric constants of 13.5 and 24.9 were obtained for the B- and C-phase Tb{sub 2}O{sub 3} films, respectively.

  12. The influence of carbon doping on the performance of Gd{sub 2}O{sub 3} as high-k gate dielectric

    SciTech Connect

    Shekhter, P.; Yehezkel, S.; Shriki, A.; Eizenberg, M.; Chaudhuri, A. R.; Osten, H. J.; Laha, A.

    2014-12-29

    One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd{sub 2}O{sub 3} layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures.

  13. Achieving all-dielectric metamaterial band-pass frequency selective surface via high-permittivity ceramics

    NASA Astrophysics Data System (ADS)

    Li, Liyang; Wang, Jiafu; Ma, Hua; Wang, Jun; Feng, Mingde; Du, Hongliang; Yan, Mingbao; Zhang, Jieqiu; Qu, Shaobo; Xu, Zhuo

    2016-03-01

    In this paper, we propose the design of all-dielectric metamaterial band-pass frequency selective surfaces (FSSs) using high-permittivity ceramics based on effective medium theory and dielectric resonator theory. The band-pass response can be determined by the permittivity of the dielectric material, the periodicity, and geometrical shape of the dielectric unit cell. As an example, a band-pass FSS composed of H shaped ceramic resonators is demonstrated. Both the simulation and experiment results show that the FSS can achieve a pass band in X-band. Since such FSSs are made of low-loss high-permittivity ceramics, they are of important application values, especially in high-temperature, high-power environments. The design method can be readily extended to the design of FSSs in other frequencies.

  14. Long-Range Surface Plasmons on Highly Anisotropic Dielectric Substrates

    NASA Astrophysics Data System (ADS)

    Gumen, L.; Nagaraj; Neogi, A.; Krokhin, A.

    We calculate the propagation length of surface plasmons in metal-dielectric structures with anisotropic substrates. We show that the Joule losses can be minimized by appropriate orientation of the optical axis of a birefringent substrate and that the favorable orientation of the axis depends on ω. A simple Kronig-Penney model for anisotropic plasmonic crystal is also proposed.

  15. Development of High-Gradient Dielectric Laser-Driven Particle Accelerator Structures

    SciTech Connect

    Byer, Robert L.

    2013-11-07

    The thrust of Stanford's program is to conduct research on high-gradient dielectric accelerator structures driven with high repetition-rate, tabletop infrared lasers. The close collaboration between Stanford and SLAC (Stanford Linear Accelerator Center) is critical to the success of this project, because it provides a unique environment where prototype dielectric accelerator structures can be rapidly fabricated and tested with a relativistic electron beam.

  16. Indium diffusion through high-k dielectrics in high-k/InP stacks

    SciTech Connect

    Dong, H.; Cabrera, W.; Santosh KC,; Brennan, B.; Qin, X.; McDonnell, S.; Hinkle, C. L.; Cho, K.; Chabal, Y. J.; Galatage, R. V.; Zhernokletov, D.; Wallace, R. M.

    2013-08-05

    Evidence of indium diffusion through high-k dielectric (Al{sub 2}O{sub 3} and HfO{sub 2}) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a PO{sub x} rich interface.

  17. Design and optimization of dielectric optical coatings for GaN based high bright LEDs

    NASA Astrophysics Data System (ADS)

    Wang, Xiaodong; Li, Yan; Yang, Hua; Yi, Xiaoyan; Wang, Liangchen; Wang, Guohong; Yang, Fuhua; Li, Jinmin

    2008-03-01

    Different types of dielectric optical coatings for GaN based high bright LEDs were designed and discussed. The optical coatings included the anti-reflection (AR) coating, high-reflection (HR) coating, and omni-directional high reflection coating. Main materials for the optical coatings were dielectric materials such as SiO II, Ta IIO 5 and Al IIO 3, which were different from the metallic reflector such as Ag usually used now. For the application of anti-reflection coating in GaN LEDs, it was introduced into the design of transparent electrodes with transparent materials such as ITO to form combined transparent electrodes. With the design of P, N transparent electrodes using the AR coating and ITO for GaN LEDs, the extraction efficiency was improved by about 15% experimentally. For the dielectric high-reflection coating, it has higher reflectivity and lower absorption than the metal reflector, and it was supposed to improve the extraction efficiency obviously. While the dielectric omni-directional reflection coating using dielectric materials was also designed and discussed in this article, since which was anticipated to improve the extraction efficiency furthermore. Using SiO II and Ta IIO 5, the average reflectivity of a design of all dielectric omni-directional high reflection coating on the sapphire surface was over 94%.

  18. A powerful electrohydrodynamic flow generated by a high-frequency dielectric barrier discharge in a gas

    NASA Astrophysics Data System (ADS)

    Nebogatkin, S. V.; Rebrov, I. E.; Khomich, V. Yu.; Yamshchikov, V. A.

    2016-01-01

    Theoretical and experimental studies of an electrohydrodynamic flow induced by a high-frequency dielectric barrier discharge distributed over a dielectric surface in a gas have been conducted. Dependences of the ion current, the gas flow velocity, and the spatial distributions thereof on the parameters of the power supply of the plasma ion emitter and an external electric field determined by the collector grid voltage have been described.

  19. An Ion Gel as a Low-Cost, Spin-Coatable, High-Capacitance Dielectric for Electrowetting-on-Dielectric (EWOD).

    PubMed

    Narasimhan, Vinayak; Park, Sung-Yong

    2015-08-01

    For many practical electrowetting-on-dielectric (EWOD) applications, the use of high-capacitance dielectric materials is critically demanded to induce a large surface tension modulation. Thin-film dielectric layers such as Parylene C, silicon dioxide (SiO2), and aluminum oxide (Al2O3) have been commonly used for EWOD. However, these dielectric materials are fabricated by conventional integrated circuit (IC) processes which are typically time-consuming and require complex and expensive laboratory setups such as high-vacuum facilities. In this article, a novel ion gel material was demonstrated as a spin-coatable and high-capacitance dielectric for low-cost EWOD applications. The ion gel offers a 2 or 3 order higher capacitance (c ≈ 10 μF/cm(2)) than conventional dielectrics commonly used for EWOD while being fabricated through a simple low-cost spin-coating process. We discuss the fundamentals of an ion gel dielectric, its fabrication process of spin coating, and the interaction with a hydrophobic layer for practical EWOD applications. The ion gel films, which consist of a copolymer, poly(vinylidene fluoride-co-hexafluoropropylene) [P(VDF-HFP)], and an ionic liquid, 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide [EMIM][TFSI], were successfully deposited on ITO substrates by using a simple spin-coating process. The experimental demonstrations validated the theoretical modeling of the ion gel layer as a high-capacitance dielectric. The EWOD performance of the ion gel samples was compared to that of other conventional dielectric materials to show the performance improvement. PMID:26154415

  20. Effect of the addition of B{sub 2}O{sub 3} and BaO-B{sub 2}O{sub 3}-SiO{sub 2} glasses on the microstructure and dielectric properties of giant dielectric constant material CaCu{sub 3}Ti{sub 4}O{sub 12}

    SciTech Connect

    Shri Prakash, B.; Varma, K.B.R.

    2007-06-15

    The effect of the addition of glassy phases on the microstructure and dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) ceramics was investigated. Both single-component (B{sub 2}O{sub 3}) and multi-component (30 wt% BaO-60 wt% B{sub 2}O{sub 3}-10 wt% SiO{sub 2} (BBS)) glass systems were chosen to study their effect on the density, microstructure and dielectric properties of CCTO. Addition of an optimum amount of B{sub 2}O{sub 3} glass facilitated grain growth and an increase in dielectric constant. However, further increase in the B{sub 2}O{sub 3} content resulted in its segregation at the grain boundaries associated with a reduction in the grain size. In contrast, BBS glass addition resulted in well-faceted grains and increase in the dielectric constant and decrease in the dielectric loss. An internal barrier layer capacitance (IBLC) model was invoked to correlate the dielectric constant with the grain size in these samples. - Graphical abstract: Scanning electron micrograph of 30 wt% BaO-60 wt% B{sub 2}O{sub 3}-10 wt% SiO{sub 2} (BBS) glass-added CaCu{sub 3}Ti{sub 4}O{sub 12} ceramic on sintering.

  1. Effect of the addition of B 2O 3 and BaO-B 2O 3-SiO 2 glasses on the microstructure and dielectric properties of giant dielectric constant material CaCu 3Ti 4O 12

    NASA Astrophysics Data System (ADS)

    Shri Prakash, B.; Varma, K. B. R.

    2007-06-01

    The effect of the addition of glassy phases on the microstructure and dielectric properties of CaCu 3Ti 4O 12 (CCTO) ceramics was investigated. Both single-component (B 2O 3) and multi-component (30 wt% BaO-60 wt% B 2O 3-10 wt% SiO 2 (BBS)) glass systems were chosen to study their effect on the density, microstructure and dielectric properties of CCTO. Addition of an optimum amount of B 2O 3 glass facilitated grain growth and an increase in dielectric constant. However, further increase in the B 2O 3 content resulted in its segregation at the grain boundaries associated with a reduction in the grain size. In contrast, BBS glass addition resulted in well-faceted grains and increase in the dielectric constant and decrease in the dielectric loss. An internal barrier layer capacitance (IBLC) model was invoked to correlate the dielectric constant with the grain size in these samples.

  2. Gate stack dielectric degradation of rare-earth oxides grown on high mobility Ge substrates

    NASA Astrophysics Data System (ADS)

    Shahinur Rahman, Md.; Evangelou, E. K.; Konofaos, N.; Dimoulas, A.

    2012-11-01

    We report on the reliability characteristics and their analysis, of rare-earth oxides (REOs) dielectric degradation, when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrates. Metal-oxide-semiconductor (MOS) devices with these stacks, show dissimilar charge trapping phenomena under varying levels of constant-voltage-stress (CVS) conditions, influencing the measured densities of the interface (Nit) and border (NBT) traps. In the present study, we report on C-Vg hysteresis curves related to both Nit and NBT. We propose a new model based on the Maxwell-Wagner mechanism, and this model explains the current decay transient observed under CVS bias from low to higher fields of MOS gate stack devices grown on Ge substrates. The proposed model is unlike to those used for other MOS devices. Finally, CVS measurements for very long times at moderate fields reveal an initial current decay due to relaxation, followed by charge trapping and generation of stress-induced leakage which eventually lead to hard breakdown.

  3. Effect of Annealing Temperature on Dielectric Constant and Bonding Structure of Low-k SiCOH Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Lee, Sungwoo; Yang, Jaeyoung; Yeo, Sanghak; Lee, Jaewon; Jung, Donggeun; Boo, Jin-hyo; Kim, Hyoungsub; Chae, Heeyeop

    2007-02-01

    We investigated the effect of annealing temperature on the properties of SiCOH films deposited by plasma-enhanced chemical vapor deposition using or a mixture of Si-O containing and hydrocarbon precursors, decamethyl-cyclopentasiloxane (DMCPSO-C10H30O5Si5) and cyclohexane (CHex-C6H12). These SiCOH films were deposited at pressures of 0.6 and 1.5 Torr and the as-deposited SiCOH films were subjected to annealing temperatures from 25 to 500 °C in a furnace for 1 h in N2 ambient at a pressure of 1 atm. The relative dielectric constants, k, of the SiCOH films deposited at 0.6 and 1.5 Torr were 2.76 and 2.26, respectively, before the annealing process. The subsequent annealing of the SiCOH film at 500 °C further reduced the k values to as low as 2.31 and 1.85, respectively. Decreases in the refractive index, hardness, and modulus were observed as the annealing temperature increased to 450 °C. However, further increasing annealing temperature to 500 °C caused the refractive index, hardness, and modulus to increase again. Trends of decreases in both the hardness and modulus with increasing annealing temperature were found. The refractive index and the film thickness retention also decreased with increasing annealing temperature. The change in the k value as a function of the annealing temperature was correlated with the change in the Fourier transform infrared absorption peaks of C-Hx, Si-CH3, and Si-O related groups. As the annealing temperature increased, the intensity of both the CHx and Si-CH3 peaks decreased, respectively. In particular, the C-H2 (asymmetric and symmetric) peaks provide direct evidence of the presence of ethylene groups in the SiCOH films. Thus the decrease in intensity of the peaks corresponding to the CHx groups and Si-O cage structure in the SiCOH films was considered to be responsible for lowering they dielectric constant, refractive index, hardness and modulus of the films. The leakage current density of the SiCOH films at 1 MV/cm is obtained

  4. High Precision Measurement of the Avogadro Constant Based on Silicon

    NASA Astrophysics Data System (ADS)

    Becker, Peter

    2005-06-01

    This paper describes an attempt to replace the present definition of the kilogram with the mass of a certain number of carbon atoms. This requires determination of the Avogadro constant, NA, with a relative uncertainty of 1 × 10-8. Silicon crystals are used in this determination. At present, a limiting factor is the measurement of the average molar mass of natural Si. Consequently, a worldwide collaboration has been set up, to produce, approximately, 5 kg of 28Si single-crystal with an enrichment greater than 99.985% and of sufficient chemical purity to be used for the determination of NA with a target relative measurement uncertainty better than 2 × 10-8.

  5. Synthesis, magnetic and dielectric properties of Er-Ni doped Sr-hexaferrite nanomaterials for applications in High density recording media and microwave devices

    NASA Astrophysics Data System (ADS)

    Ashiq, Muhammad Naeem; Iqbal, Muhammad Javed; Najam-ul-Haq, Muhammad; Hernandez Gomez, Pablo; Qureshi, Ashfaq Mahmood

    2012-01-01

    A sol-gel combustion method has been successfully employed for the synthesis of Sr-hexaferrite nanomaterials doped with Er3+ and Ni2+ at strontium and iron sites, respectively. The X-ray diffraction analysis confirmed the single magnetoplumbite phase and the crystallite size was found to be in the range of 14-16 nm, suitable for obtaining signal-to-noise ratio in the high density recording media. The magnetic properties such as saturation magnetization (Ms), remanence (Mr) and coercivity (Hc) were calculated from hysteresis loops. Ms, Mr and Hc are observed to increase with the Er-Ni content. The dielectric constant (ε´) and dielectric loss (tan δ) is found to decrease with the increase in frequency and is explained on the basis of Maxwell-Wagner and Koops theory. The decrease in dielectric constant and dielectric loss but increase in saturation magnetization and remanence with Er-Ni content suggests that the materials are suitable for applications in microwave devices and high density recording media .

  6. Dielectric spectroscopy of watermelons for quality sensing

    NASA Astrophysics Data System (ADS)

    Nelson, Stuart O.; Guo, Wen-chuan; Trabelsi, Samir; Kays, Stanley J.

    2007-07-01

    Dielectric properties of four small-sized watermelon cultivars, grown and harvested to provide a range of maturities, were measured with an open-ended coaxial-line probe and an impedance analyser over the frequency range from 10 MHz to 1.8 GHz. Probe measurements were made on the external surface of the melons and also on tissue samples from the edible internal tissue. Moisture content and soluble solids content (SSC) were measured for internal tissue samples, and SSC (sweetness) was used as the quality factor for correlation with the dielectric properties. Individual dielectric constant and loss factor correlations with SSC were low, but a high correlation was obtained between the SSC and permittivity from a complex-plane plot of dielectric constant and loss factor, each divided by SSC. However, SSC prediction from the dielectric properties by this relationship was not as high as expected (coefficient of determination about 0.4). Permittivity data (dielectric constant and loss factor) for the melons are presented graphically to show their relationships with frequency for the four melon cultivars and for external surface and internal tissue measurements. A dielectric relaxation for the external surface measurements, which may be attributable to a combination of bound water, Maxwell-Wagner, molecular cluster or ion-related effects, is also illustrated. Coefficients of determination for complex-plane plots, moisture content and SSC relationship, and penetration depth are also shown graphically. Further studies are needed for determining the practicality of sensing melon quality from their dielectric properties.

  7. Investigation of dielectric properties of different cake formulations during microwave and infrared-microwave combination baking.

    PubMed

    Sakiyan, Ozge; Sumnu, Gulum; Sahin, Serpil; Meda, Venkatesh

    2007-05-01

    Dielectric properties can be used to understand the behavior of food materials during microwave processing. Dielectric properties influence the level of interaction between food and high frequency electromagnetic energy. Dielectric properties are, therefore, important in the design of foods intended for microwave preparation. In this study, it was aimed to determine the variation of dielectric properties of different cake formulations during baking in microwave and infrared-microwave combination oven. In addition, the effects of formulation and temperature on dielectric properties of cake batter were examined. Dielectric constant and loss factor of cake samples were shown to be dependent on formulation, baking time, and temperature. The increase in baking time and temperature decreased dielectric constant and loss factor of all formulations. Fat content was shown to increase dielectric constant and loss factor of cakes. PMID:17995773

  8. Improved RF performance of travelling wave MR with a high permittivity dielectric lining of the bore.

    PubMed

    Andreychenko, A; Bluemink, J J; Raaijmakers, A J E; Lagendijk, J J W; Luijten, P R; van den Berg, C A T

    2013-09-01

    Application of travelling wave MR to human body imaging is restricted by the limited peak power of the available RF amplifiers. Nevertheless, travelling wave MR advantages like a large field of view excitation and distant location of transmit elements would be desirable for whole body MRI. In this work, improvement of the B1+ efficiency of travelling wave MR is demonstrated. High permittivity dielectric lining placed next to the scanner bore wall effectively reduces attenuation of the travelling wave in the longitudinal direction and at the same time directs the radial power flow toward the load. First, this is shown with an analytical model of a metallic cylindrical waveguide with the dielectric lining next to the wall and loaded with a cylindrical phantom. Simulations and experiments also reveal an increase of B1+ efficiency in the center of the bore for travelling wave MR with a dielectric lining. Phantom experiments show up to a 2-fold gain in B1+ with the dielectric lining. This corresponds to a 4-fold increase in power efficiency of travelling wave MR. In vivo experiments demonstrate an 8-fold signal-to-noise ratio gain with the dielectric lining. Overall, it is shown that dielectric lining is a constructive method to improve efficacy of travelling wave MR. PMID:23044511

  9. Preparation and Characterization of Ultralow-Dielectric-Constant Porous SiCOH Thin Films Using 1,2-Bis(triethoxysilyl)ethane, Triethoxymethylsilane, and a Copolymer Template

    NASA Astrophysics Data System (ADS)

    Fu, Shuang; Qian, Ke-Jia; Ding, Shi-Jin; Zhang, David Wei

    2011-10-01

    Ultralow-dielectric-constant ( k) porous SiCOH films have been prepared using 1,2-bis(triethoxysilyl)ethane, triethoxymethylsilane, and a poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) triblock copolymer template by means of spin-coating. The resulting films were characterized by cross-section scanning electron microscopy, small-angle x-ray diffraction, atomic force microscopy, Fourier-transform infrared spectroscopy, nanomechanical testing, and electrical measurements. Thermal treatment at 350°C for 2 h resulted in the formation of ultralow- k films with k of ˜2.0, leakage current density of 3 × 10-8 A/cm2 at 1 MV/cm, reduced modulus ( E r) of ˜4.05 GPa, and hardness ( H) of ˜0.32 GPa. After annealing between 400°C and 500°C for 30 min, the resulting films showed fluctuant k values of 1.85 to 2.22 and leakage current densities of 3.7 × 10-7 A/cm2 to 3 × 10-8 A/cm2 at 0.8 MV/cm, likely due to the change of the film microstructure. Compared with 350°C annealing, higher-temperature annealing can improve the mechanical strength of the ultralow- k film, i.e., E r ≈ 5 GPa and H ≈ 0.56 GPa after 500°C annealing.

  10. In situ real-time monitoring of profile evolution during plasma etching of mesoporous low-dielectric-constant SiO{sub 2}

    SciTech Connect

    Gerung, Henry; Brinker, C. Jeffrey; Brueck, Steven R.J.; Han, Sang M.

    2005-03-01

    We have employed attenuated total reflection Fourier transforms infrared spectroscopy (ATR-FTIRS) to monitor the profile evolution of patterned mesoporous, low-dielectric-constant SiO{sub 2} films in situ and in real time during plasma etching. A stack of patterned photoresist, anti-reflective coating, and mesoporous SiO{sub 2} is etched in an inductively coupled plasma reactor, using CHF{sub 3} and Ar. During etching, the IR absorbance of Si-O-Si stretching modes near 1080 cm{sup -1} decreases, and the rate of decrease in Si-O-Si absorbance translates to the SiO{sub 2} removal rate. When corrected for the exponentially decaying evanescent electric field, the removal rate helps monitor the profile evolution and predict the final etch profile. The predicted profiles are in excellent agreement with the cross-sectional images taken by scanning electron microscopy. In a similar approach, we calculate the absolute total number of C-F bonds in the sidewall passivation and observe its formation rate as a function of time. Assuming that the thickness of the sidewall passivation tapers down towards the trench bottom, we deduce that C-F formation occurs mostly in the final stage of etching when the trench bottom meets the Ge ATR crystal and that a critical amount of C-F buildup is necessary to maintain the anisotropic etch profile.

  11. Helium Plasma Damage of Low-k Carbon Doped Silica Film: the Effect of Si Dangling Bonds on the Dielectric Constant

    NASA Astrophysics Data System (ADS)

    Li, Hailing; Wang, Qing; Ba, Dechun

    2014-11-01

    The low-k carbon doped silica film has been modified by radio frequency helium plasma at 5 Pa pressure and 80 W power with subsequent XPS, FTIR and optical emission spectroscopy analysis. XPS data indicate that helium ions have broken Si-C bonds, leading to Si-C scission with C(1s) lost seriously. The Si(2p), O(1s), peak obviously shifted to higher binding energies, indicating an increasingly oxidized Si(2p). FTIR data also show that the silanol formation increased with longer exposure time up to a week. Contrarily, the CH3 stretch, Si-C stretching bond and the ratio of the Si-O-Si cage and Si-O-Si network peak sharply decreased upon exposure to helium plasma. The OES result indicates that monovalent helium ions in plasma play a key role in damaging carbon doped silica film. So it can be concluded that the monovalent helium ions besides VUV photons can break the weak Si-C bonds to create Si dangling bonds and free methyl radicals, and the latter easily reacts with O2 from the atmosphere to generate CO2 and H2O. The bonds change is due to the Si dangling bonds combining with H2O, thereby, increasing the dielectric constant k value.

  12. Compact Double-P Slotted Inset-Fed Microstrip Patch Antenna on High Dielectric Substrate

    PubMed Central

    Ahsan, M. R.; Islam, M. T.; Habib Ullah, M.; Mahadi, W. N. L.; Latef, T. A.

    2014-01-01

    This paper presents a compact sized inset-fed rectangular microstrip patch antenna embedded with double-P slots. The proposed antenna has been designed and fabricated on ceramic-PTFE composite material substrate of high dielectric constant value. The measurement results from the fabricated prototype of the antenna show −10 dB reflection coefficient bandwidths of 200 MHz and 300 MHz with center resonant frequency of 1.5 GHz and 4 GHz, respectively. The fabricated antenna has attained gains of 3.52 dBi with 81% radiation efficiency and 5.72 dBi with 87% radiation efficiency for lower band and upper band, respectively. The measured E- and H-plane radiation patterns are also presented for better understanding. Good agreement between the simulation and measurement results and consistent radiation patterns make the proposed antenna suitable for GPS and C-band applications. PMID:25165750

  13. Polarization-independent and high-efficiency dielectric metasurfaces for visible light.

    PubMed

    Li, Qi-Tong; Dong, Fengliang; Wang, Bong; Gan, Fengyuan; Chen, Jianjun; Song, Zhiwei; Xu, Lixua; Chu, Weiguo; Xiao, Yun-Feng; Gong, Qihuang; Li, Yan

    2016-07-25

    Dielectric metasurfaces are capable of completely manipulating the phase, amplitude, and polarization of light with high spatial resolutions. The emerging design based on high-index and low-loss dielectrics has led to the realization of novel metasurfaces with high transmissions, but these devices usually operate at the limited bandwidth, and are sensitive to the incident polarization. Here, we report the realization of the polarization-independent and high-efficiency silicon metasurfaces spanning the visible wavelengths about 200 nm. The fabricated computer-generated meta-holograms exhibit a 90% diffraction efficiency, which are verified by gradient metasurfaces with measured efficiencies up to 93% at 670 nm, and exceeding 75% at the wavelengths from 600 to 800 nm for the two orthogonally polarized incidences. These dielectric metasurfaces effectively decouple the phase modulation from the polarization states and frequencies for visible light, which hold great potential for novel flat optical devices operating over a broad spectrum. PMID:27464084

  14. Unidirectional light scattering with high efficiency at optical frequencies based on low-loss dielectric nanoantennas.

    PubMed

    Shibanuma, Toshihiko; Albella, Pablo; Maier, Stefan A

    2016-08-01

    Dielectric nanoparticles offer low optical losses and access to both electric and magnetic Mie resonances. This enables unidirectional scattering along the incident axis of light, owing to the interference between these two resonances. Here we theoretically and experimentally demonstrate that an asymmetric dimer of dielectric nanoparticles can provide unidirectional forward scattering with high efficiency. Theoretical analyses reveal that the dimer configuration can satisfy the first Kerker condition at the resonant peaks of electric and magnetic dipolar modes, therefore showing highly efficient directional forward scattering. The unidirectional forward scattering with high efficiency is confirmed in our experiments using a silicon nanodisk dimer on a transparent substrate. This study will boost the realization of practical applications using low-loss and efficient subwavelength all-dielectric nanoantennas. PMID:27389310

  15. Highly sensitive flexible pressure sensors with microstructured rubber dielectric layers

    NASA Astrophysics Data System (ADS)

    Mannsfeld, Stefan C. B.; Tee, Benjamin C.-K.; Stoltenberg, Randall M.; Chen, Christopher V. H.-H.; Barman, Soumendra; Muir, Beinn V. O.; Sokolov, Anatoliy N.; Reese, Colin; Bao, Zhenan

    2010-10-01

    The development of an electronic skin is critical to the realization of artificial intelligence that comes into direct contact with humans, and to biomedical applications such as prosthetic skin. To mimic the tactile sensing properties of natural skin, large arrays of pixel pressure sensors on a flexible and stretchable substrate are required. We demonstrate flexible, capacitive pressure sensors with unprecedented sensitivity and very short response times that can be inexpensively fabricated over large areas by microstructuring of thin films of the biocompatible elastomer polydimethylsiloxane. The pressure sensitivity of the microstructured films far surpassed that exhibited by unstructured elastomeric films of similar thickness, and is tunable by using different microstructures. The microstructured films were integrated into organic field-effect transistors as the dielectric layer, forming a new type of active sensor device with similarly excellent sensitivity and response times.

  16. High dielectric permittivity and improved mechanical and thermal properties of poly(vinylidene fluoride) composites with low carbon nanotube content: effect of composite processing on phase behavior and dielectric properties.

    PubMed

    Kumar, G Sudheer; Vishnupriya, D; Chary, K Suresh; Patro, T Umasankar

    2016-09-23

    The composite processing technique and nanofiller concentration and its functionalization significantly alter the properties of polymer nanocomposites. To realize this, multi-walled carbon nanotubes (CNT) were dispersed in a poly(vinylidene fluoride) (PVDF) matrix at carefully selected CNT concentrations by two illustrious methods, such as solution-cast and melt-mixing. Notwithstanding the processing method, CNTs induced predominantly the γ-phase in PVDF, instead of the commonly obtained β-phase upon nanofiller incorporation, and imparted significant improvements in dielectric properties. Acid-treatment of CNT improved its dispersion and interfacial adhesion significantly with PVDF, and induced a higher γ-phase content and better dielectric properties in PVDF as compared to pristine CNT. Further, the γ-phase content was found to be higher in solution-cast composites than that in melt-mixed counterparts, most likely due to solvent-induced crystallization in a controlled environment and slow solvent evaporation in the former case. However, interestingly, the melt-mixed composites showed a significantly higher dielectric constant at the onset of the CNT networked-structure as compared to the solution-cast composites. This suggests the possible role of CNT breakage during melt-mixing, which might lead to higher space-charge polarization at the polymer-CNT interface, and in turn an increased number of pseudo-microcapacitors in these composites than the solution-cast counterparts. Notably, PVDF with 0.13 vol% (volume fraction, f c  = 0.0013) of acid-treated CNTs, prepared by melt-mixing, displayed the relative permittivity of ∼217 and capacitance of ∼5430 pF, loss tangent of ∼0.4 at 1 kHz and an unprecedented figure of merit of ∼10(5). We suggest a simple hypothesis for the γ-phase formation and evolution of the high dielectric constant in these composites. Further, the high-dielectric composite film showed marked improvements in mechanical and thermal

  17. High dielectric permittivity and improved mechanical and thermal properties of poly(vinylidene fluoride) composites with low carbon nanotube content: effect of composite processing on phase behavior and dielectric properties

    NASA Astrophysics Data System (ADS)

    Sudheer Kumar, G.; Vishnupriya, D.; Chary, K. Suresh; Umasankar Patro, T.

    2016-09-01

    The composite processing technique and nanofiller concentration and its functionalization significantly alter the properties of polymer nanocomposites. To realize this, multi-walled carbon nanotubes (CNT) were dispersed in a poly(vinylidene fluoride) (PVDF) matrix at carefully selected CNT concentrations by two illustrious methods, such as solution-cast and melt-mixing. Notwithstanding the processing method, CNTs induced predominantly the γ-phase in PVDF, instead of the commonly obtained β-phase upon nanofiller incorporation, and imparted significant improvements in dielectric properties. Acid-treatment of CNT improved its dispersion and interfacial adhesion significantly with PVDF, and induced a higher γ-phase content and better dielectric properties in PVDF as compared to pristine CNT. Further, the γ-phase content was found to be higher in solution-cast composites than that in melt-mixed counterparts, most likely due to solvent-induced crystallization in a controlled environment and slow solvent evaporation in the former case. However, interestingly, the melt-mixed composites showed a significantly higher dielectric constant at the onset of the CNT networked-structure as compared to the solution-cast composites. This suggests the possible role of CNT breakage during melt-mixing, which might lead to higher space-charge polarization at the polymer–CNT interface, and in turn an increased number of pseudo-microcapacitors in these composites than the solution-cast counterparts. Notably, PVDF with 0.13 vol% (volume fraction, f c = 0.0013) of acid-treated CNTs, prepared by melt-mixing, displayed the relative permittivity of ∼217 and capacitance of ∼5430 pF, loss tangent of ∼0.4 at 1 kHz and an unprecedented figure of merit of ∼105. We suggest a simple hypothesis for the γ-phase formation and evolution of the high dielectric constant in these composites. Further, the high-dielectric composite film showed marked improvements in mechanical and thermal

  18. Unidirectional light scattering with high efficiency at optical frequencies based on low-loss dielectric nanoantennas

    NASA Astrophysics Data System (ADS)

    Shibanuma, Toshihiko; Albella, Pablo; Maier, Stefan A.

    2016-07-01

    Dielectric nanoparticles offer low optical losses and access to both electric and magnetic Mie resonances. This enables unidirectional scattering along the incident axis of light, owing to the interference between these two resonances. Here we theoretically and experimentally demonstrate that an asymmetric dimer of dielectric nanoparticles can provide unidirectional forward scattering with high efficiency. Theoretical analyses reveal that the dimer configuration can satisfy the first Kerker condition at the resonant peaks of electric and magnetic dipolar modes, therefore showing highly efficient directional forward scattering. The unidirectional forward scattering with high efficiency is confirmed in our experiments using a silicon nanodisk dimer on a transparent substrate. This study will boost the realization of practical applications using low-loss and efficient subwavelength all-dielectric nanoantennas.Dielectric nanoparticles offer low optical losses and access to both electric and magnetic Mie resonances. This enables unidirectional scattering along the incident axis of light, owing to the interference between these two resonances. Here we theoretically and experimentally demonstrate that an asymmetric dimer of dielectric nanoparticles can provide unidirectional forward scattering with high efficiency. Theoretical analyses reveal that the dimer configuration can satisfy the first Kerker condition at the resonant peaks of electric and magnetic dipolar modes, therefore showing highly efficient directional forward scattering. The unidirectional forward scattering with high efficiency is confirmed in our experiments using a silicon nanodisk dimer on a transparent substrate. This study will boost the realization of practical applications using low-loss and efficient subwavelength all-dielectric nanoantennas. Data availability. The data that support the findings of this study are available from the corresponding authors on request (E-mail: datainquiryEXSS@imperial.ac.uk).

  19. Resonant transmission of light in chains of high-index dielectric particles

    NASA Astrophysics Data System (ADS)

    Savelev, Roman S.; Filonov, Dmitry S.; Petrov, Mihail I.; Krasnok, Alexander E.; Belov, Pavel A.; Kivshar, Yuri S.

    2015-10-01

    We study numerically, analytically, and experimentally the resonant transmission of light in a waveguide formed by a periodic array of high-index dielectric nanoparticles with a side-coupled resonator. We demonstrate that a resonator with high enough Q -factor provides the conditions for the Fano-type interference allowing one to control the resonant transmission of light. We suggest a practical realization of this resonant effect based on the quadrupole resonance of a dielectric particle and demonstrate it experimentally for ceramic disks at microwave frequencies.

  20. Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.

    PubMed

    Farmer, Damon B; Chiu, Hsin-Ying; Lin, Yu-Ming; Jenkins, Keith A; Xia, Fengnian; Avouris, Phaedon

    2009-12-01

    We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices. PMID:19883119

  1. A THz Coaxial Two-Channel Dielectric Wakefield Structure for High Gradient Acceleration

    SciTech Connect

    Marshall, T. C.; Sotnikov, G. V.; Hirshfield, J. L.

    2010-11-04

    A coaxial two-channel dielectric wakefield structure is examined for use as a high gradient accelerator. A THz design, having radius {approx}1 mm, is shown to provide GeV/m--level acceleration gradient, high transformer ratio, and stable accelerated bunch motion when excited by a stable-moving 5-GeV 6-nC annular drive bunch.

  2. A THz Coaxial Two-Channel Dielectric Wakefield Structure for High Gradient Acceleration

    NASA Astrophysics Data System (ADS)

    Marshall, T. C.; Sotnikov, G. V.; Hirshfield, J. L.

    2010-11-01

    A coaxial two-channel dielectric wakefield structure is examined for use as a high gradient accelerator. A THz design, having radius ˜1 mm, is shown to provide GeV/m—level acceleration gradient, high transformer ratio, and stable accelerated bunch motion when excited by a stable-moving 5-GeV 6-nC annular drive bunch.

  3. Structure of high-density water at constant temperature

    SciTech Connect

    Pettitt, B.M.; Calef, D.F.

    1987-03-12

    Calculations of the site-site correlation functions for a model of water were performed as a function of density (or pressure) at fixed temperature. These calculations are discussed and compared to neutron-scattering data. The structure of liquid water at high pressure is consistent with a substantially distorted hydrogen-bonding network. It is found that, unlike MeOH, water cannot easily accommodate structures associated with directional attractive forces in the region of several kilobars of pressure.

  4. Modeling and simulations of diphasic composites for development of high energy density dielectrics

    NASA Astrophysics Data System (ADS)

    Patil, Sandeep Kesharsingh

    This doctoral research is focused on analytical and numerical modeling of diphasic composites for use in high energy density capacitors for pulsed power applications. An analytical model is presented based on an equivalent capacitance/impedance circuit used to express the effective permittivity of a composite dielectric with complex-shaped inclusions as functions of frequency and inclusion volume fraction. Zero-three (0-3) types of composites are investigated using this model. The results of this model are compared with different known effective medium theories (Maxwell Garnett, logarithmic, Bruggeman, series, and parallel mixing rules). Model predictions are also compared with published experimental data and are found to be in good agreement. Electrostatic field distribution characteristics and energy storage magnitudes for diphasic dielectrics containing high-permittivity inclusions in a low permittivity host phase (0-3 composite) have been evaluated analytically and numerically. Field distribution and energy storage were studied as a function of dielectric contrast (ratio of inclusion to host permittivity) and inclusion volume fraction. Information obtained from these studies was used to consider optimized diphasic dielectric traits that would lead to increases in energy density and breakdown behavior. Results of these simulations were also compared to the Maxwell Garnett (MG) mixing rule and the upper limit of applicability of the MG formulation in terms of inclusion volume fraction was established. It was determined that this limit was a function of the dielectric contrast.

  5. Solution-processed trilayer inorganic dielectric for high performance flexible organic field effect transistors

    NASA Astrophysics Data System (ADS)

    Tan, H. S.; Kulkarni, S. R.; Cahyadi, T.; Lee, P. S.; Mhaisalkar, S. G.; Kasim, J.; Shen, Z. X.; Zhu, F. R.

    2008-11-01

    High performance organic field effect transistors using a solution-processable processed trilayer sol-gel silica gate dielectric architecture fabricated on plastic substrates exhibited low driving voltages of -3.0V, high saturation mobilities of ˜3.5cm2/Vs, and on-off current ratio of 105. The enhancement in field effect mobility is attributed to improved dielectric-semiconductor interfacial morphology and increased capacitance of the tristratal dielectric. The pentacene devices displayed no signs of electrical degradation upon bending through a bending radius of 24mm, 2.27% strain. The slight increase in the drain currents upon bending strain was investigated using Raman spectroscopy, which revealed enhanced in-phase intermolecular coupling.

  6. On the nature of high field charge transport in reinforced silicone dielectrics: Experiment and simulation

    NASA Astrophysics Data System (ADS)

    Huang, Yanhui; Schadler, Linda S.

    2016-08-01

    The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field and were compared with the properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial in determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails and is successfully verified by a Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to the non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.

  7. Permittivity transition from highly positive to negative: Polyimide/carbon nanotube composite's dielectric behavior around percolation threshold

    SciTech Connect

    Sun, Yiyi; Wang, Junli; Qi, Shengli; Tian, Guofeng Wu, Dezhen

    2015-07-06

    In this report, a series of composite films consisting of polyimide as the matrix and multi-wall carbon nanotubes as the filler (PI/MWCNTs) were prepared in a water-based method with the use of triethylamine. Their dielectric properties were tested under frequency of between 100 Hz and 10 MHz, and it was revealed that the permittivity value behaved interestingly around the percolation threshold (8.01% in volume). The water-based method ensured that fillers had high dispersibility in the matrix before percolation, which led to a relatively high dielectric constant (284.28). However, the overlapping caused by excess MWCNTs created pathways for electrons inside the matrix, turning the permittivity to negative. The former phenomenon was highly congruent with the percolation power law, while the latter could be explained by the Drude Model. AC conductivity was measured for more supportive information. Additionally, scanning electron microscopy and transmission electron microscopy were employed to record MWCNTs' microscopic distribution and morphology at the percolation threshold.

  8. Effect of incorporating aromatic and chiral groups on the dielectric properties of poly(dimethyltin esters).

    PubMed

    Baldwin, Aaron F; Ma, Rui; Huan, Tran Doan; Cao, Yang; Ramprasad, Ramamurthy; Sotzing, Gregory A

    2014-12-01

    High-dielectric constant materials are critical for numerous applications such as photovoltaics, photonics, transistors, and capacitors. There are numerous polymers used as dielectric layers in these applications but can suffer from having a low dielectric constant, small band gap, or ferroelectricity. Here, the structure-property relationship of various poly(dimethyltin esters) is described that look to enhance the dipolar and atomic polarization component of the dielectric constant. These polymers are also modeled using first principles calculations based on density functional theory (DFT) to predict such values as the total, electronic, and ionic dielectric constant as well as structure. A strong correlation is achieved between the theoretical and experimental values with the polymers exhibiting dielectric constants >4.5 with dissipation on the order of 10(-3) -10(-2) . PMID:25381737

  9. Highly Sensitive, Flexible, and Wearable Pressure Sensor Based on a Giant Piezocapacitive Effect of Three-Dimensional Microporous Elastomeric Dielectric Layer.

    PubMed

    Kwon, Donguk; Lee, Tae-Ik; Shim, Jongmin; Ryu, Seunghwa; Kim, Min Seong; Kim, Seunghwan; Kim, Taek-Soo; Park, Inkyu

    2016-07-01

    We report a flexible and wearable pressure sensor based on the giant piezocapacitive effect of a three-dimensional (3-D) microporous dielectric elastomer, which is capable of highly sensitive and stable pressure sensing over a large tactile pressure range. Due to the presence of micropores within the elastomeric dielectric layer, our piezocapacitive pressure sensor is highly deformable by even very small amounts of pressure, leading to a dramatic increase in its sensitivity. Moreover, the gradual closure of micropores under compression increases the effective dielectric constant, thereby further enhancing the sensitivity of the sensor. The 3-D microporous dielectric layer with serially stacked springs of elastomer bridges can cover a much wider pressure range than those of previously reported micro-/nanostructured sensing materials. We also investigate the applicability of our sensor to wearable pressure-sensing devices as an electronic pressure-sensing skin in robotic fingers as well as a bandage-type pressure-sensing device for pulse monitoring at the human wrist. Finally, we demonstrate a pressure sensor array pad for the recognition of spatially distributed pressure information on a plane. Our sensor, with its excellent pressure-sensing performance, marks the realization of a true tactile pressure sensor presenting highly sensitive responses to the entire tactile pressure range, from ultralow-force detection to high weights generated by human activity. PMID:27286001

  10. Achieving high performance electric field induced strain: a rational design of hyperbranched aromatic polyamide functionalized graphene-polyurethane dielectric elastomer composites.

    PubMed

    Chen, Tian; Qiu, Jinhao; Zhu, Kongjun; Li, Jinhuan; Wang, Jingwen; Li, Shuqin; Wang, Xiaoliang

    2015-03-26

    Dielectric elastomers have great potentials as flexible actuators in micro-electromechanical systems (MEMS) due to their large deformation, light weight, mechanical compliancy, and low cost. The low dielectric constant of these elastomers requires a rather high voltage electric field, which has greatly limited their applications. In this work, a diaphragm-type flexible microactuator comprising a hyperbranched aromatic polyamide functionalized graphene (HAPFG) filler embedded into the polyurethane (PU) dielectric elastomer matrix is described. The rational designed HAPFG sheets exhibits uniform dispersion in PU matrix and strong adhesion with the matrix by hydrogen-bond coupling. Consequently, the HAPFG-PU composites possess high dielectric performance and low loss modulus. The effect of hyperbranched aromatic polyamide functionalized graphene on high voltage electric field induced strain was experimentally investigated using the Fotonic sensor. The high electric field response of the composite was discussed by applying different kinds of alternating-current field. In addition, a comparison of the breakdown strength between the HAPFG-PU composite and the pure PU was carried out. PMID:25741878

  11. Constant Light Output Ballasting For High Intensity Discharge Lamps

    NASA Astrophysics Data System (ADS)

    Donkin, Adrian

    1988-02-01

    Since the commercial introduction some twenty years ago of HMI* (Hydragyrum-mercury, Medium, Iodide) type lamps, as a source intended primarily for floodlighting applications, their attraction as a cinematographic light source has been apparent due to their largely desirable characteristics. Use in this field has been restricted due to the absolute requirement for an alternating current supply - with a sine wave supply frame rates are limited to a sub-multiple of the supply frequency with the supply frequency phase locked to the camera frame rate. This has effectively barred metal halide HID lighting from use in high speed photography. The general characteristics of metal halide HID lamps are presented alongside a sample of other light sources. An electronic ballast which has been proven to 12000 Watts in the motion picture industry is then described which overcomes the limitations of the conventional magnetic ballast - the square wave output of the electronic ballast theoretically allows the use of any camera frame rate/shutter angle combination. Finally the suitability of luminaires for high speed photography is discussed.

  12. Muscle-like high-stress dielectric elastomer actuators with oil capsules

    NASA Astrophysics Data System (ADS)

    La, Thanh-Giang; Lau, Gih-Keong; Shiau, Li-Lynn; Wei-Yee Tan, Adrian

    2014-10-01

    Despite being capable of generating large strains, dielectric elastomer actuators (DEAs) are short of strength. Often, they cannot produce enough stress or as much work as that achievable by human elbow muscles. Their maximum actuation capacity is limited by the electrical breakdown of dielectric elastomers. Often, failures of these soft actuators are pre-mature and localized at the weakest spot under high field and high stress. Localized breakdowns, such as electrical arcing, thermal runaway and punctures, could spread to ultimately cause rupture if they were not stopped. This work shows that dielectric oil immersion and self-clearable electrodes nibbed the buds of localized breakdowns from DEAs. Dielectric oil encapsulation in soft-membrane capsules was found to help the DEA sustain an ultra-high electrical breakdown field of 835\\;MV{{m}^{-1}}, which is 46% higher than the electrical breakdown strength of the dry DEA in air at 570\\;MV{\\mkern 1mu} {{m}^{-1}}. Because of the increased apparent dielectric strength, this oil-capsuled DEA realizes a higher maximum isotonic work density of up to 31.51Jk{{g}^{-1}}, which is 43.8% higher than that realized by the DEA in air. Meanwhile, it produces higher maximum isometric stress of up to 1.05 MPa, which is 75% higher than that produced by the DEA in air. Such improved actuator performances are comparable to those achieved by human flexor muscles, which can exert up to 1.2 MPa during elbow flexion. This muscle-like, high-stress dielectric elastomeric actuation is very promising to drive future human-like robots.

  13. Mechanical properties of low- and high-k dielectric thin films: A surface Brillouin light scattering study

    NASA Astrophysics Data System (ADS)

    Zizka, J.; King, S.; Every, A. G.; Sooryakumar, R.

    2016-04-01

    Surface Brillouin light scattering measurements are used to determine the elastic constants of nano-porous low-k SiOC:H (165 nm) and high-k HfO2 (25 nm) as well as BN:H (100 nm) films grown on Si substrates. In addition, the study investigates the mechanical properties of ultra-thin (25 nm) blanket TiN cap layers often used as hard masks for patterning, and their effects on the underlying low-k dielectrics that support a high level of interconnected porosity. Depending on the relative material properties of individual component layers, the acoustic modes manifest as confined, propagating, or damped resonances in the light scattering spectra, thereby enabling the mechanical properties of the ultra-thin films to be determined.

  14. Dielectric dispersion of Y-type hexaferrites at low frequencies

    NASA Astrophysics Data System (ADS)

    Abo El Ata, A. M.; Attia, S. M.

    2003-02-01

    A series of polycrystalline Y-type hexaferrites with composition Ba 2Ni 2- xZn xFe 12O 22 (where 0.0⩽ x⩽2.0) were prepared by the standard ceramic method to study the effect of the frequency, temperature and composition on their AC electrical conductivity σ' AC, and dielectric properties. It was found that, the AC conductivity shows dispersion at high frequencies. This dispersion was attributed to the interfacial polarization arising from the inhomogeneous structure of the material. At low frequencies the dielectric constant, ɛ', is abnormally high and decreases rapidly with increasing frequency. Dielectric relaxation peaks were observed on the tan δ( F) curves. The results of the dielectric constant and dielectric loss were explained on the basis of the assumption that the mechanism of dielectric polarization is similar to that of the conduction process.

  15. The Effects of Varied versus Constant High-, Medium-, and Low-Preference Stimuli on Performance

    ERIC Educational Resources Information Center

    Wine, Byron; Wilder, David A.

    2009-01-01

    The purpose of the current study was to compare the delivery of varied versus constant high-, medium-, and low-preference stimuli on performance of 2 adults on a computer-based task in an analogue employment setting. For both participants, constant delivery of the high-preference stimulus produced the greatest increases in performance over…

  16. Characterization of low dielectric constant plasma polymer films deposited by plasma-enhanced chemical vapor deposition using decamethyl-cyclopentasiloxane and cyclohexane as the precursors

    SciTech Connect

    Yang, Jaeyoung; Lee, Sungwoo; Park, Hyoungsun; Jung, Donggeun; Chae, Heeyeop

    2006-01-15

    We investigated the properties of plasma polymer films deposited by plasma-enhanced chemical vapor deposition using a mixture of decamethyl-cyclopentasiloxane (C{sub 10}H{sub 30}O{sub 5}Si{sub 5}) and cyclohexane (C{sub 6}H{sub 12}) as the precursors, which we refer to as plasma polymerized decamethyl-cyclopentasiloxane: cyclohexane (PPDMCPSO:CHex) films. The relative dielectric constants, k, of the plasma polymer films were correlated with the Fourier transform infrared absorption peaks of the C-Hx, Si-CH{sub 3}, and Si-O related groups. As the amount of the CHx species in the as-deposited plasma polymer films increased, the k value and the leakage current density of the thin films decreased. The subsequent annealing of the PPDMCPSO:CHex film at 400 deg. C for 1 h further reduced the k value to as low as k=2.05. This annealed PPDMCPSO:CHex thin film showed a leakage current density of the order of 4x10{sup -7} A/cm{sup 2} at 1 MV/cm and a breakdown field of 6.5 MV/cm. Through the bias-temperature stress test, it was estimated that the PPDMCPSO:CHex film with a k value of 2.05 would retain its insulating properties for ten years at 167 deg. C under an electrical field of 1 MV/cm, when it is presented as a layer adjacent to Cu/TaN(10 nm)

  17. Grain size effect on the giant dielectric constant of CaCu{sub 3}Ti{sub 4}O{sub 12} nanoceramics prepared by mechanosynthesis and spark plasma sintering

    SciTech Connect

    Ahmad, Mohamad M.; Yamada, Koji

    2014-04-21

    In the present work, CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) nanoceramics with different grain sizes were prepared by spark plasma sintering (SPS) at different temperatures (SPS-800, SPS-900, SPS-975, and SPS-1050) of the mechanosynthesized nano-powder. Structural and microstructural properties were studied by XRD and field-emission scanning electron microscope measurements. The grain size of CCTO nanoceramics increases from 80 nm to ∼200 nm for the ceramics sintered at 800 °C and 975 °C, respectively. Further increase of SPS temperature to 1050 °C leads to micro-sized ceramics of 2–3 μm. The electrical and dielectric properties of the investigated ceramics were studied by impedance spectroscopy. Giant dielectric constant was observed in CCTO nanoceramics. The dielectric constant increases with increasing the grain size of the nanoceramics with values of 8.3 × 10{sup 3}, 2.4 × 10{sup 4}, and 3.2 × 10{sup 4} for SPS-800, SPS-900, and SPS-975, respectively. For the micro-sized SPS-1050 ceramics, the dielectric constant dropped to 2.14 × 10{sup 4}. The dielectric behavior is interpreted within the internal barrier layer capacitance picture due to the electrical inhomogeneity of the ceramics. Besides the resistive grain boundaries that are usually observed in CCTO ceramics, domain boundaries appear as a second source of internal layers in the current nanoceramics.

  18. Composite dielectric waveguides

    NASA Astrophysics Data System (ADS)

    Yamashita, E.; Atsuki, K.; Kuzuya, R.

    1980-09-01

    The modal analysis of a composite circular dielectric waveguide (CCDW) is presented. Computed values of the propagation constant of a CCDW are compared with those of the homogeneous circular dielectric waveguides (HCDW). Microwave experiments concerning the propagation constant of a CCDW of Teflon and Rexolite are described.

  19. Guided-Wave Plasmon Polariton Modes in High-Index Dielectric Structures

    NASA Astrophysics Data System (ADS)

    Owen, Rachel; Leger, Janelle; Johnson, Brad

    Interest in subwavelength waveguides has increased as the need to interface between optical signals and increasingly small electronic components grows. Surface plasmon polaritons (SPPs) are surface charge density oscillations localized to a metal-dielectric interface that confine energy to a structure that is not diffraction limited. Thus, structures that support SPPs are promising candidates for subwavelength waveguides. However, most of the electric field propagates along the metal interface, causing Ohmic damping to restrict use to short-range applications. Here we present an architecture that supports high index dielectric plasmon polariton modes (HID-PPMs). These structures utilize the metal-dielectric-metal-substrate structure of typical SPP waveguides. However, the core dielectric layer has a higher refractive index than the substrate. This small structural change causes the bulk of the electric field to be concentrated in the dielectric region resulting in a dramatic reduction of damping effects. Here we present experimental evidence of HID-PPMs in a simple trilayer structure. Our results match model predictions with remarkable accuracy using minimal parameter modifications. We discuss these results as well as the potential applications of these devices.

  20. From organized high throughput data to phenomenological theory: The example of dielectric breakdown

    NASA Astrophysics Data System (ADS)

    Kim, Chiho; Pilania, Ghanshyam; Ramprasad, Rampi

    Understanding the behavior (and failure) of dielectric insulators experiencing extreme electric fields is critical to the operation of present and emerging electrical and electronic devices. Despite its importance, the development of a predictive theory of dielectric breakdown has remained a challenge, owing to the complex multiscale nature of this process. Here, we focus on the intrinsic dielectric breakdown field of insulators--the theoretical limit of breakdown determined purely by the chemistry of the material, i.e., the elements the material is composed of, the atomic-level structure, and the bonding. Starting from a benchmark dataset (generated from laborious first principles computations) of the intrinsic dielectric breakdown field of a variety of model insulators, simple predictive phenomenological models of dielectric breakdown are distilled using advanced statistical or machine learning schemes, revealing key correlations and analytical relationships between the breakdown field and easily accessible material properties. The models are shown to be general, and can hence guide the screening and systematic identification of high electric field tolerant materials.

  1. THz Dielectric Properties of High Explosives Calculated by Density Functional Theory for the Design of Detectors

    NASA Astrophysics Data System (ADS)

    Shabaev, A.; Lambrakos, S. G.; Bernstein, N.; Jacobs, V.; Finkenstadt, D.

    2011-12-01

    The current need for better detection of explosive devices has imposed a new necessity for determining the dielectric response properties of energetic materials with respect to electromagnetic wave excitation. Among the range of different frequencies for electromagnetic excitation, the THz frequency range is of particular interest because of its nondestructive nature and ability to penetrate materials that are characteristic of clothing. Typically, the dielectric response properties for electromagnetic wave excitation at THz frequencies, as well as at other frequencies, are determined by means of experimental measurements. The present study, however, emphasizes that density functional theory (DFT), and associated software technology, is sufficiently mature for the determination of dielectric response functions, and actually provides complementary information to that obtained from experiment. In particular, these dielectric response functions provide quantitative initial estimates of spectral response features that can be adjusted with respect to additional information such as laboratory measurements and other types of theory-based calculations, as well as providing for the molecular level interpretation of response structure. This point is demonstrated in the present study by calculations of ground-state resonance structure associated with the high explosives RDX, TNT1, and TNT2 using DFT, which is for the construction of parameterized dielectric response functions for excitation by electromagnetic waves at frequencies within the THz range. The DFT software NRLMOL was used for the calculations of ground-state resonance structure presented here.

  2. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    NASA Astrophysics Data System (ADS)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  3. Phase transitions, prominent dielectric anomalies, and negative thermal expansion in three high thermally stable ammonium magnesium-formate frameworks.

    PubMed

    Shang, Ran; Xu, Guan-Cheng; Wang, Zhe-Ming; Gao, Song

    2014-01-20

    We present three Mg-formate frameworks, incorporating three different ammoniums: [NH4][Mg(HCOO)3] (1), [CH3CH2NH3][Mg(HCOO)3] (2) and [NH3(CH2)4NH3][Mg2(HCOO)6] (3). They display structural phase transitions accompanied by prominent dielectric anomalies and anisotropic and negative thermal expansion. The temperature-dependent structures, covering the whole temperature region in which the phase transitions occur, reveal detailed structural changes, and structure-property relationships are established. Compound 1 is a chiral Mg-formate framework with the NH4(+) cations located in the channels. Above 255 K, the NH4(+) cation vibrates quickly between two positions of shallow energy minima. Below 255 K, the cations undergo two steps of freezing of their vibrations, caused by the different inner profiles of the channels, producing non-compensated antipolarization. These lead to significant negative thermal expansion and a relaxor-like dielectric response. In perovskite 2, the orthorhombic phase below 374 K possesses ordered CH3CH2NH3(+) cations in the cubic cavities of the Mg-formate framework. Above 374 K, the structure becomes trigonal, with trigonally disordered cations, and above 426 K, another phase transition occurs and the cation changes to a two-fold disordered state. The two transitions are accompanied by prominent dielectric anomalies and negative and positive thermal expansion, contributing to the large regulation of the framework coupled the order-disorder transition of CH3CH2NH3(+). For niccolite 3, the gradually enhanced flipping movement of the middle ethylene of [NH3(CH2)4NH3](2+) in the elongated framework cavity finally leads to the phase transition with a critical temperature of 412 K, and the trigonally disordered cations and relevant framework change, providing the basis for the very strong dielectric dispersion, high dielectric constant (comparable to inorganic oxides), and large negative thermal expansion. The spontaneous polarizations

  4. Quasi-static high-resolution magnetic-field detection based on dielectric optical resonators

    NASA Astrophysics Data System (ADS)

    Ioppolo, Tindaro; Rubino, Edoardo

    2013-06-01

    In this paper we present a high resolution magnetic field sensor that is based on the perturbation of the optical modes (whispering gallery mode, WGM) of a spherical dielectric resonator. The optical resonator is side coupled to a tapered single mode optical fiber. One side of the optical fiber is coupled to a distribute feedback diode laser, while the other end is connected to a photodiode. The optical modes of the dielectric cavity are perturbed using a metglas sheet that is in contact with the resonator. When the metglas sheet is exposed to an external magnetic field it elongates perturbing the optical modes of the dielectric cavity. This in turn leads to a shift in the optical resonances. By measuring the induced WGM shift the magnetic field can be measured. Preliminary results show sensor resolution of a few nanoteslas.

  5. SLAB symmetric dielectric micron scale structures for high gradient electron acceleration.

    SciTech Connect

    Rosenzweig, J. B.; Schoessow, P. V.

    1999-06-12

    A class of planar microstructure is proposed which provide high accelerating gradients when excited by an infrared laser pulse. These structures consist of parallel dielectric slabs separated by a vacuum gap; the dielectric or the outer surface coating are spatially modulated at the laser wavelength along the beam direction so as to support a standing wave accelerating field. We have developed numerical and analytic models of the accelerating mode fields in the structure. We show an optimized coupling scheme such that this mode is excited resonantly with a large quality factor. The status of planned experiments on fabricating and measuring these planar structures will be described.

  6. Vacuum ultra-violet damage and damage mitigation for plasma processing of highly porous organosilicate glass dielectrics

    NASA Astrophysics Data System (ADS)

    de Marneffe, J.-F.; Zhang, L.; Heyne, M.; Lukaszewicz, M.; Porter, S. B.; Vajda, F.; Rutigliani, V.; el Otell, Z.; Krishtab, M.; Goodyear, A.; Cooke, M.; Verdonck, P.; Baklanov, M. R.

    2015-10-01

    Porous organosilicate glass thin films, with k-value 2.0, were exposed to 147 nm vacuum ultra-violet (VUV) photons emitted in a Xenon capacitive coupled plasma discharge. Strong methyl bond depletion was observed, concomitant with a significant increase of the bulk dielectric constant. This indicates that, besides reactive radical diffusion, photons emitted during plasma processing do impede dielectric properties and therefore need to be tackled appropriately during patterning and integration. The detrimental effect of VUV irradiation can be partly suppressed by stuffing the low-k porous matrix with proper sacrificial polymers showing high VUV absorption together with good thermal and VUV stability. In addition, the choice of an appropriate hard-mask, showing high VUV absorption, can minimize VUV damage. Particular processing conditions allow to minimize the fluence of photons to the substrate and lead to negligible VUV damage. For patterned structures, in order to reduce VUV damage in the bulk and on feature sidewalls, the combination of both pore stuffing/material densification and absorbing hard-mask is recommended, and/or the use of low VUV-emitting plasma discharge.

  7. Vacuum ultra-violet damage and damage mitigation for plasma processing of highly porous organosilicate glass dielectrics

    SciTech Connect

    Marneffe, J.-F. de Lukaszewicz, M.; Porter, S. B.; Vajda, F.; Rutigliani, V.; Verdonck, P.; Baklanov, M. R.; Zhang, L.; Heyne, M.; El Otell, Z.; Krishtab, M.; Goodyear, A.; Cooke, M.

    2015-10-07

    Porous organosilicate glass thin films, with k-value 2.0, were exposed to 147 nm vacuum ultra-violet (VUV) photons emitted in a Xenon capacitive coupled plasma discharge. Strong methyl bond depletion was observed, concomitant with a significant increase of the bulk dielectric constant. This indicates that, besides reactive radical diffusion, photons emitted during plasma processing do impede dielectric properties and therefore need to be tackled appropriately during patterning and integration. The detrimental effect of VUV irradiation can be partly suppressed by stuffing the low-k porous matrix with proper sacrificial polymers showing high VUV absorption together with good thermal and VUV stability. In addition, the choice of an appropriate hard-mask, showing high VUV absorption, can minimize VUV damage. Particular processing conditions allow to minimize the fluence of photons to the substrate and lead to negligible VUV damage. For patterned structures, in order to reduce VUV damage in the bulk and on feature sidewalls, the combination of both pore stuffing/material densification and absorbing hard-mask is recommended, and/or the use of low VUV-emitting plasma discharge.

  8. High capacitance hybrid organic-inorganic gate dielectrics for solution-processable electronic technologies

    NASA Astrophysics Data System (ADS)

    Everaerts, Ken

    Solution-processable materials offer enormous opportunity in designing lightweight, flexible, and low-cost electronic technologies. Dielectric materials and the different classes of semiconductors (derived from organics, inorganics, or nanomaterials) comprise the two most important components in transistors, which are the basic building blocks of all modern electronic devices. New semiconductors such as single-walled carbon nanotubes (SWCNTs) and inorganic amorphous oxide semiconductors (AOSs), including indium gallium zinc oxide (IGZO), are envisioned for high performance applications as a possible replacement for silicon within integrated circuits, display backplane technologies, or high throughput inkjet printing technologies that can be low in cost and waste. These new semiconductors, amongst others, require corresponding advances in gate dielectric materials to support optimum device function. Herein we describe research surrounding the advancement of organic-inorganic hybrid gate dielectric materials for use in thin-film transistor (TFT) architectures. We describe the reasoning, the strategy, and the properties of a new hafnium oxide-based self-assembled nanodielectric (Hf-SAND), and examine in detail the chemical structure/formation, and electronic performance. Record setting capacitance can be achieved by using thin multilayers of Hf-SAND (1.1 μF/cm2). Application of this new dielectric to the aforementioned SWCNT and IGZO semiconductors in an effort to demonstrate technological feasibility, yield record field-effect mobilities (20-130 cm2V-1s-1) and large ON state transconductances (up to 5 mS) at very low operating voltages (< 3 V), while retaining the ability to be processed completely from solution and in ambient atmosphere. These TFT performance metrics are examined in detail, and placed in perspective in relation to the Hf-SAND dielectric properties. Finally, we present some forward looking statements to help identify further opportunities for

  9. Silicone dielectric elastomers filled with carbon nanotubes and actuator

    NASA Astrophysics Data System (ADS)

    Zhang, Zhen; Liu, Liwu; Deng, Gang; Sun, Shouhua; Liu, Yanju; Leng, Jinsong

    2009-03-01

    Dielectric elastomers (DEs) are one particular type of electroactive polymers. The excellent features of merit possessed by dielectric elastomers make them the most performing materials which can be applied in many domains: biomimetics, aerospace, mechanics, medicals, etc. In order to maximize actuator performance, the dielectric elastomer actuators should have a high dielectric constant and high dielectric breakdown strength. In this paper, multi-walled carbon nanotube (MWNT) is used to develop a particulate composite based on silicone elastomer matrix, with dielectric permittivity improved. And the composite is designed to a new configuration of dielectric elastomer actuator to show electrically activated linear contractions. Prototype samples of this folded actuator, along with the fabrication and analysis is discussed here.

  10. HYPERFINE STRUCTURE CONSTANTS OF ENERGETICALLY HIGH-LYING LEVELS OF ODD PARITY OF ATOMIC VANADIUM

    SciTech Connect

    Güzelçimen, F.; Yapıcı, B.; Demir, G.; Er, A.; Öztürk, I. K.; Başar, Gö.; Kröger, S.; Tamanis, M.; Ferber, R.; Docenko, D.; Başar, Gü. E-mail: sophie.kroeger@htw-berlin.de

    2014-09-01

    High-resolution Fourier transform spectra of a vanadium-argon plasma have been recorded in the wavelength range of 365-670 nm (15,000-27,400 cm{sup –1}). Optical bandpass filters were used in the experimental setup to enhance the sensitivity of the Fourier transform spectrometer. In total, 138 atomic vanadium spectral lines showing resolved or partially resolved hyperfine structure have been analyzed to determine the magnetic dipole hyperfine structure constants A of the involved energy levels. One of the investigated lines has not been previously classified. As a result, the magnetic dipole hyperfine structure constants A for 90 energy levels are presented: 35 of them belong to the configuration 3d {sup 3}4s4p and 55 to the configuration 3d {sup 4}4p. Of these 90 constants, 67 have been determined for the first time, with 23 corresponding to the configuration 3d {sup 3}4s4p and 44 to 3d {sup 4}4p.

  11. Measuring sap flow, and other plant physiological conditions across a soil salinity gradient in the lower Colorado River at Cibola National Wildlife Refuge: Vegetation and soil physiology linkages with microwave dielectric constant

    NASA Astrophysics Data System (ADS)

    McDonald, K. C.; Lasne, Y.; Schroeder, R.; Morino, K.; Hultine, K. R.; Nagler, P. L.

    2009-12-01

    We used ground measurements to examine stand structure and evapotranspiration of Tamarix in the Cibola National Wildlife Refuge (CNWR) on the Lower Colorado River. Three Tamarix study sites were established at different distances from the Colorado River on a river terrace in the CNWR. The sites were chosen from aerial photographs to represent typical dense stands of Tamarix within the CNWR. The sites were representative of differing saline environments, with each having ground water with distinct salt concentration levels. Wells were established at the site to establish depth to water and the salinity concentration within the ground water. We monitored xylem sap flow within each of the three stands. In addition we measured leaf area index to characterize canopy structure. We compared ET, foliage density, depth to water, and salinity among the Tamarix sites to examine stand-level variability driven by the variations in salinity. We supplemented these collections with measurements to characterize soil and vegetation microwave dielectric properties and their relationship to physiologic parameters. The dielectric properties of a material describe the interaction of an electric field with the material. Previous field experiments have demonstrated that varying degrees of correlation exist between vegetation dielectric properties and tree canopy water status. Temporal variation of the dielectric constant of woody plant tissue may result from changes in water status (e.g., water content) and chemical composition, albeit to varying degrees of sensitivity. The varying amount of ground water salinity at CNWR offers a unique opportunity to examine the relationship between vegetation and soil dielectric constant as related to vegetation ecophysiology. A field portable vector network analyzer is used to measure the microwave dielectric spectrum of the soil and vegetation Combined with measurements of vegetation xylem sap flux and soil chemistry, these measurements allow

  12. Enhanced ferromagnetic properties and high temperature dielectric anomalies in Bi{sub 0.9}Ca{sub 0.05}Sm{sub 0.05}FeO{sub 3} prepared by hydrothermal method

    SciTech Connect

    Bharathi, K. Kamala; Ramesh, G.; Patro, L.N.; Raju, N. Ravi Chandra; Kim, Do Kyung

    2015-02-15

    Graphical abstract: Temperature variation of dielectric constant of Bi{sub 0.9}Ca{sub 0.05}Sm{sub 0.05}FeO{sub 3} at various frequencies as a function of temperature indicating anomalies at 420 and 540 K. - Highlights: • Substitution of Sm ions for Bi enhances the saturation magnetization of BiFeO{sub 3}. • XPS studies indicate the creation of oxygen vacancies upon Ca substitution. • Dielectric measurements show dielectric anomalies at high temperatures. • Raman spectra at high temperatures confirm the dielectric anomaly temperatures. - Abstract: Enhanced ferromagnetic properties and high temperature dielectric anomalies in the temperature range of 300–873 K in Bi{sub 0.9}Ca{sub 0.05}Sm{sub 0.05}FeO{sub 3} (BCSFO) prepared by hydrothermal method are reported. BiFeO{sub 3} is seen to crystallize in rhombohedrally distorted perovskite structure without any impurity phase. Substitution of small amount of Ca and Sm (Bi{sub 0.9}Ca{sub 0.05}Sm{sub 0.05}FeO{sub 3}) leads to increase in the lattice constant values and formation of small amount of secondary phase. Magnetization curve of pure BFO indicates very weak ferromagnetism combined with antiferromagnetic nature of the samples. Whereas, BCSFO sample shows very clear and enhanced ferromagnetic nature. Saturation magnetization and Neel’s temperature values are found to be 4.36 emu/g and 664 K, respectively. X-ray photoelectron spectroscopy indicates the creation of oxygen vacancies upon Ca substitution in Bi site. Dielectric anomalies at 420 and 540 K were observed for Bi{sub 0.9}Ca{sub 0.05}Sm{sub 0.05}FeO{sub 3} from the temperature variation of dielectric constant and specific heat capacity measurements. Observation of dielectric anomalies in pure BiFeO{sub 3} sample reveals that the origin of dielectric peaks is purely from the primary phase. Raman spectroscopy study indicates a clear shift and broadening of A modes (between 100 and 200 cm{sup −1}) at the dielectric anomaly temperatures supporting the

  13. High temperature X-ray diffraction, Raman spectroscopy and dielectric studies on yttrium orthochromites

    NASA Astrophysics Data System (ADS)

    Mall, Ashish Kumar; Garg, Ashish; Gupta, Rajeev

    2016-05-01

    The structural, thermal and dielectric properties of YCrO3 ceramic prepared by solid state reaction method have been investigated by a combination of XRD, Raman spectroscopy and permittivity measurement. The X-ray diffraction spectra shows single phase orthorhombically distorted perovskite structure with Pnma symmetry over a wide range of temperature 300K to 1100K. Impedance spectroscopy study on the sample showed that the dielectric constant, tangent loss and ac conductivity with frequency increases on increasing the temperature. Dielectric measurement shows a relaxor like transition at about 460K. Non-Debye type relaxation is observed with activation energy of 0.25 eV extracted from ac conductivity at 11 kHz frequency. We believe that the oxygen ion vacancies play an important role in conduction processes in addition to polaron hopping at higher temperatures. Raman scattering measurements were performed over a wide temperature range from 300K to 600 K. The line width of the modes due to CrO6 bending and in-plane O2 stretching broadens with increasing temperature.

  14. Molecular Layer-seeded Ultra-thin Top-gate Dielectrics for High Transconductance Graphene Transistors

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Karmel, Hunter; Alaboson, Justice; Lauhon, Lincoln; Marks, Tobin; Hersam, Mark

    2012-02-01

    The potential of graphene in integrated analog and digital circuits can only be fully realized through incorporation of ultra-thin gate dielectrics to enable large-scale small-channel graphene field-effect transistors (GFETs). Atomic-layer deposition (ALD) is a viable technique to fabricate gate-dielectrics, however, it requires a seeding layer on otherwise inert graphene. Here, we demonstrate a single molecule thick perylene-3,4,9,10-tetracarboxylic dianhydride overlayer as an effective seeding layer to grow high-κ Al2O3 on mechanically exfoliated graphene for high-performance GFETs. Using an ultra-thin (< 1nm) seeding layer, in contrast to polymer films (5-10 nm), we demonstrate fabrication of the thinnest ALD-grown gate-dielectric (4 nm) reported to date in top-gated GFETs. This yields high performance GFETs with the intrinsic transconductance parameter approaching 2.4 mS and the field-effect mobility ˜3000 cm^2/Vs. We also demonstrate generalization of this molecular layer seeded-ALD growth method to higher- κ gate dielectrics, yielding further enhanced GFET transconductance for possible application to radio-frequency circuits.

  15. Characterization of a dielectric phantom for high-field magnetic resonance imaging applications

    PubMed Central

    Duan, Qi; Duyn, Jeff H.; Gudino, Natalia; de Zwart, Jacco A.; van Gelderen, Peter; Sodickson, Daniel K.; Brown, Ryan

    2014-01-01

    Purpose: In this work, a generic recipe for an inexpensive and nontoxic phantom was developed within a range of biologically relevant dielectric properties from 150 MHz to 4.5 GHz. Methods: The recipe includes deionized water as the solvent, NaCl to primarily control conductivity, sucrose to primarily control permittivity, agar–agar to gel the solution and reduce heat diffusivity, and benzoic acid to preserve the gel. Two hundred and seventeen samples were prepared to cover the feasible range of NaCl and sucrose concentrations. Their dielectric properties were measured using a commercial dielectric probe and were fitted to a 3D polynomial to generate a recipe describing the properties as a function of NaCl concentration, sucrose concentration, and frequency. Results: Results indicated that the intuitive linear and independent relationships between NaCl and conductivity and between sucrose and permittivity are not valid. A generic polynomial recipe was developed to characterize the complex relationship between the solutes and the resulting dielectric values and has been made publicly available as a web application. In representative mixtures developed to mimic brain and muscle tissue, less than 2% difference was observed between the predicted and measured conductivity and permittivity values. Conclusions: It is expected that the recipe will be useful for generating dielectric phantoms for general magnetic resonance imaging (MRI) coil development at high magnetic field strength, including coil safety evaluation as well as pulse sequence evaluation (including B1+ mapping, B1+ shimming, and selective excitation pulse design), and other non-MRI applications which require biologically equivalent dielectric properties. PMID:25281973

  16. Characterization of a dielectric phantom for high-field magnetic resonance imaging applications

    SciTech Connect

    Duan, Qi Duyn, Jeff H.; Gudino, Natalia; Zwart, Jacco A. de; Gelderen, Peter van; Sodickson, Daniel K.; Brown, Ryan

    2014-10-15

    Purpose: In this work, a generic recipe for an inexpensive and nontoxic phantom was developed within a range of biologically relevant dielectric properties from 150 MHz to 4.5 GHz. Methods: The recipe includes deionized water as the solvent, NaCl to primarily control conductivity, sucrose to primarily control permittivity, agar–agar to gel the solution and reduce heat diffusivity, and benzoic acid to preserve the gel. Two hundred and seventeen samples were prepared to cover the feasible range of NaCl and sucrose concentrations. Their dielectric properties were measured using a commercial dielectric probe and were fitted to a 3D polynomial to generate a recipe describing the properties as a function of NaCl concentration, sucrose concentration, and frequency. Results: Results indicated that the intuitive linear and independent relationships between NaCl and conductivity and between sucrose and permittivity are not valid. A generic polynomial recipe was developed to characterize the complex relationship between the solutes and the resulting dielectric values and has been made publicly available as a web application. In representative mixtures developed to mimic brain and muscle tissue, less than 2% difference was observed between the predicted and measured conductivity and permittivity values. Conclusions: It is expected that the recipe will be useful for generating dielectric phantoms for general magnetic resonance imaging (MRI) coil development at high magnetic field strength, including coil safety evaluation as well as pulse sequence evaluation (including B{sub 1}{sup +} mapping, B{sub 1}{sup +} shimming, and selective excitation pulse design), and other non-MRI applications which require biologically equivalent dielectric properties.

  17. P2IMS depth profile analysis of high temperature boron oxynitride dielectric films

    NASA Astrophysics Data System (ADS)

    Badi, N.; Vijayaraghavan, S.; Benqaoula, A.; Tempez, A.; Tauziède, C.; Chapon, P.

    2014-02-01

    Existing silicon oxynitride (SiON) dielectric can only provide a very near term solution for the metal oxide semiconductor technology. The emerging high-k dielectric materials have a limited thermal stability and are prone to electrical behavior degradation which is associated with unwanted chemical reactions with silicon (Si). We investigated here applicability of amorphous boron oxynitride (BON) thin films as an emerging dielectric for high temperature capacitors. BON samples of thickness varying from 200 nm down to 10 nm were deposited in a high vacuum reactor using ion source assisted physical vapor deposition (PVD) technique. Plasma profiling ion mass spectrometry (P2IMS) was utilized to specifically determine the interface quality and best capacitor performance as a function of growth temperatures of a graded sample with alternate layers of deposited titanium (Ti) and BON layers on Si. P2IMS depth profiling of these layers were also performed to evaluate the stability of the dielectric layers and their efficacy against B dopant diffusion simulating processes occurring in activated polySi-based devices. For this purpose, BON layers were deposited on boron-isotope 10 (B10) implanted Si substrates and subsequently annealed at high temperatures up to 1050 °C for about 10 s. Results comparing inter-diffusion of B10 intensities at the interfaces of BON-Si and SiON-Si samples suggest suitability of BON as barrier layers against boron diffusion at high temperature. Stable Ti/BON/Ti capacitor behavior was achieved at optimum growth temperature of 600 °C of the BON dielectric layer. Capacitance change with frequency (10 kHz to 2 MHz) and temperature up to 400 °C is about 1% and 10%, respectively.

  18. Fabrication of CuAl{sub 1−x}M{sub x}O{sub 2} (M = Fe, Cr)/Ni film delafossite compounds using spin coating and their microstructure and dielectric constant

    SciTech Connect

    Diantoro, Markus Yuwita, Pelangi Eka Olenka, Desyana Nasikhudin

    2014-09-25

    The discovery of delafossite compound has encouraged more rapid technological developments particularly in transparent electronic devices. Copper oxide-based transparent thin films delafossite semiconductor recently give much attention in the field of optoelectronic technology, after the discovery of p-type CuAlO{sub 2}. The potential applications of a p-type semiconductor transparent conductive oxides (TCO) have been applied in broad field of optoelectronics. To explore a broad physical properties interms of magnetic conducting subtitution is understudied. In this work we report the fabrication of delafossite film on Ni substrate and their characterization of CuAl{sub 1−x}M{sub x}O{sub 2} delafossite compounds doped with Cr{sup 3+} and Fe{sup 3+} from the raw material of Cu(NO{sub 3}){sub 2}@@‡3H{sub 2}O, Al(NO{sub 3}){sub 3}@@‡9H{sub 2}O, Fe(NO{sub 3}){sub 3}@@‡9H{sub 2}O and Cr(NO{sub 3}){sub 3}@@‡9H{sub 2}O. The films were prepared using spin coating through a sol-gel technique at various concentrations of x = 0, 0.03, 0.04, and 0.05 for chromium and x = 0, 0.02, 0.04, 0.06, and 0.08 for iron doped. Crystal and microstructure were characterized by means of Cu-Kα Bragg-Brentano X-RD followed by High Score Plus and SEM-EDAX. The dielectric constants of the films were characterized using LCR meter. It was found that the CuAl{sub 1−x}M{sub x}O{sub 2}/Ni delafossite films were successfully fabricated. The CuAl{sub 1−x}Fe{sub x}O{sub 2} compound crystallized with lattice parameters of a = b ranged from 2.8603 Å to 2.8675 Å and c ranged from 16.9576 to 17.0763 Å. The increase of the dopant give rise to the increase of the lattice parameters. Since iron has bigger ionic radius (69 pm) than original site of Al{sup 3+} with radius of 53 pm the crystal volume lattice also increase. Further analyses of increasing volume of the crystal, as expected, affected to the decreasing of its dielectric constant. The similar trends also shown by Cr{sup 3+} doped of

  19. Relationship between orientation factor of lead zirconate titanate nanowires and dielectric permittivity of nanocomposites

    SciTech Connect

    Tang, Haixiong E-mail: hsodano@ufl.edu; Malakooti, Mohammad H.; Sodano, Henry A. E-mail: hsodano@ufl.edu

    2013-11-25

    The relationship between the orientation of lead zirconate titanate (PZT) nanowires dispersed in nanocomposites and the resulting dielectric constants are quantified. The orientation of the PZT nanowires embedded in a polymer matrix is controlled by varying the draw ratio and subsequently quantified using Herman's Orientation Factor. Consequently, it is demonstrated that the dielectric constants of nanocomposites are improved by increasing the orientation factor of the PZT nanowires. This technique is proposed to improve the dielectric constant of the nanocomposites without the need for additional filler volume fraction since the nanocomposites are utilized in a wide range of high dielectric permittivity electronic components.

  20. High-index dielectric meta-materials for near-perfect broadband reflectors

    NASA Astrophysics Data System (ADS)

    Liu, Zhengqi; Liu, Xiaoshan; Wang, Yan; Pan, Pingping

    2016-05-01

    All-dielectric meta-materials offer a potential alternative to plasmonic meta-materials at optical frequencies. Herein, we take advantage of loss-less as well as simple unit cell geometry to demonstrate near-perfect broadband reflectors made from all-dielectric materials. These near-perfect reflectors, consisting of high-index cross-shaped resonators (n  =  3.5, Si), operating in the telecommunications bands, exhibit novel optical properties including polarization-independent, wide-angle near-unity reflection. The average reflectance is exceeding 98% at the wavelength range from 1.261 μm to 1.533 μm. At 1.310 μm, the average reflectance (R) reaches 99.7%, surpassing the reflectance of metallic mirrors. A near-perfect super-broadband reflection spectrum with bandwidth of 0.330 μm (R  >  98%) is achieved for a system with a higher index dielectric resonator array (n  =  4.0, Ge). Moreover, the optical properties of the reflector provide high scalability across the wavelength range via tuning of dielectric resonators. The whole structure, with common triple-layer features, can be mass-produced using standard lithography methods and deposition techniques. These optical and structural features make the proposed near-perfect broadband reflectors feasible avenues for manipulating light in important applications in spectroscopy, photovoltaics and light emission.

  1. Polyaniline coated carbon nanotube/graphene "sandwich" hybrid and its high-k epoxy composites with low dielectric loss and percolation threshold

    NASA Astrophysics Data System (ADS)

    Wang, Tongxing; Yuan, Li; Liang, Guozheng; Gu, Aijuan

    2015-12-01

    Fabricating high-k conductor/polymer composites with low dielectric loss and percolation threshold is still a challenge, while the electric conductor is the key factor of determining the dielectric behavior of composites. A novel hybridized conductor with "sandwich" structure (rPANI@CNT-rGO) and active groups was prepared by introducing polyaniline coated carbon nanotube (rPANI@CNT) on the surface of reduced graphene oxide (rGO) through electrostatic and π-π conjugate forces. And the rPANI@CNT-rGO hybrids with different loadings of rPANI@CNT were introduced into epoxy resin (EP) to prepare a series of rPANI@CNT-0.75rGO/EP composites; meanwhile rPANI@CNT and rGO were mechanically blended with EP to prepare rPANI@CNT/0.75rGO/EP composites for comparison. rPANI@CNT/0.75rGO/EP composites have low dielectric constant (10-20), whereas the dielectric constant at 100 Hz of the 7rPANI@CNT-0.75rGO/EP composite with 0.75 wt% rPANI@CNT is as high as 210, much larger than those of rPANI@CNT/EP, 0.75rGO/EP and rPANI@CNT/0.75rGO/EP composites. Meanwhile, the dielectric loss at 100 Hz of 7rPANI@CNT-0.75rGO/EP composite is only 17% of that of 0.75rGO/EP, indicating that the dielectric behavior of rPANI@CNT-0.75rGO/EP composites is not originated from a simple addition of basic components, but has an obvious synergistic effect. The percolation threshold of rPANI@CNT-0.75rGO/EP composites is only 1.1 wt%. The origin of these attractive dielectric properties was revealed through systematically discussing the structures and simulated circuits of rPANI@CNT-0.75rGO/EP composites.

  2. HIGH-GRADIENT, HIGH-TRANSFORMER-RATIO, DIELECTRIC WAKE FIELD ACCELERATOR

    SciTech Connect

    Hirshfield, Jay L

    2012-04-12

    The Phase I work reported here responds to DoE'ss stated need "...to develop improved accelerator designs that can provide very high gradient (>200 MV/m for electrons...) acceleration of intense bunches of particles." Omega-P's approach to this goal is through use of a ramped train of annular electron bunches to drive a coaxial dielectric wakefield accelerator (CDWA) structure. This approach is a direct extension of the CDWA concept from acceleration in wake fields caused by a single drive bunch, to the more efficient acceleration that we predict can be realized from a tailored (or ramped) train of several drive bunches. This is possible because of a much higher transformer ratio for the latter. The CDWA structure itself has a number of unique features, including: a high accelerating gradient G, potentially with G > 1 GeV/m; continuous energy coupling from drive to test bunches without transfer structures; inherent transverse focusing forces for particles in the accelerated bunch; highly stable motion of high charge annular drive bunches; acceptable alignment tolerances for a multi-section system. What is new in the present approach is that the coaxial dielectric structure is now to be energized by-not one-but by a short train of ramped annular-shaped drive bunches moving in the outer coaxial channel of the structure. We have shown that this allows acceleration of an electron bunch traveling along the axis in the inner channel with a markedly higher transformer ratio T than for a single drive bunch. As described in this report, the structure will be a GHz-scale prototype with cm-scale transverse dimensions that is expected to confirm principles that can be applied to the design of a future THz-scale high gradient (> 500 MV/m) accelerator with mm-scale transverse dimensions. We show here a new means to significantly increase the transformer ratio T of the device, and thereby to significantly improve its suitability as a flexible and effective component in a future

  3. The influence of hydrogen bonding on the dielectric constant and the piezoelectric energy harvesting performance of hydrated metal salt mediated PVDF films.

    PubMed

    Jana, Santanu; Garain, Samiran; Sen, Shrabanee; Mandal, Dipankar

    2015-07-14

    Polyvinylidene fluoride (PVDF) films are filled with various mass fractions (wt%) of hydrated metal salt (MgCl2·6H2O) (Mg-salt) to fabricate high performance piezoelectric energy harvesters (PEHs). They deliver up to 4 V of open circuit voltage by simply repeated human finger imparting (under a pressure of ∼4.45 kPa) and also generate sufficient power to turn on at least ten commercial blue light emitting diodes (LEDs) instantly. The enhanced piezo-response is attributed to the combined effect of the change in the inherent dipole moment of the electroactive phase containing PVDF itself and H-bonding arising between the Mg-salt filler and PVDF via electrostatic interactions. Furthermore, it also successfully charged the capacitors, signifying practical applicability as a piezoelectric based energy harvester power source. UV-visible optical absorption spectral analysis revealed the possibility to estimate a change in the optical band gap value at different concentrations of Mg-salt filler added PVDF films that possess a useful methodology where the Mg-salt can be used as an optical probe. In addition dielectric properties have been studied to understand the role of molecular kinetic and interfacial polarization occurs in H-bond PVDF films at different applied frequencies at room temperature. PMID:26077827

  4. High-gain, high-bandwidth, rail-to-rail, constant-gm CMOS operational amplifier

    NASA Astrophysics Data System (ADS)

    Huang, Hong-Yi; Wang, Bo-Ruei

    2013-01-01

    This study presents a high-gain, high-bandwidth, constant-gm , rail-to-rail operational amplifier (op-amp). The constant transconductance is improved with a source-to-bulk bias control of an input pair. A source degeneration scheme is also adapted to the output stage for receiving wide input range without degradation of the gain. Additionally, several compensation schemes are employed to enhance the stability. A test chip is fabricated in a 0.18 µm complementary metal-oxide semiconductor process. The active area of the op-amp is 181 × 173 µm2 and it consumes a power of 2.41 mW at a supply voltage of 1.8 V. The op-amp achieves a dc gain of 94.3 dB and a bandwidth of 45 MHz when the output capacitive load is connected to an effective load of 42.5 pF. A class-AB output stage combining a slew rate (SR) boost circuit provides a sinking current of 6 mA and an SR of 17 V/µs.

  5. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    SciTech Connect

    Brusasco, R.M.

    1989-01-01

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs.

  6. Dielectric, thermal and mechanical properties of zirconium silicate reinforced high density polyethylene composites for antenna applications.

    PubMed

    Varghese, Jobin; Nair, Dinesh Raghavan; Mohanan, Pezholil; Sebastian, Mailadil Thomas

    2015-06-14

    A low cost and low dielectric loss zirconium silicate (ZrSiO4) reinforced HDPE (high-density polyethylene) composite has been developed for antenna applications. The 0-3 type composite is prepared by dispersing ZrSiO4 fillers for various volume fractions (0.1 to 0.5) in the HDPE matrix by the melt mixing process. The composite shows good microwave dielectric properties with a relative permittivity of 5.6 and a dielectric loss of 0.003 at 5 GHz at the maximum filler loading of 0.5 volume fraction. The composite exhibits low water absorption, excellent thermal and mechanical properties. It shows a water absorption of 0.03 wt%, a coefficient of thermal expansion of 70 ppm per °C and a room temperature thermal conductivity of 2.4 W mK(-1). The composite shows a tensile strength of 22 MPa and a microhardness of 13.9 kg mm(-2) for the filler loading of 0.5 volume fraction. The HDPE-ZrSiO4 composites show good dielectric, thermal and mechanical properties suitable for microwave soft substrate applications. A microstrip patch antenna is designed and fabricated using the HDPE-0.5 volume fraction ZrSiO4 substrate and the antenna parameters are investigated. PMID:25981704

  7. Use of high and low frequency dielectric measurements in the NDE of adhesively bonded composite joints

    NASA Astrophysics Data System (ADS)

    Pethrick, R. A.; Hayward, D.; McConnell, B. K.; Crane, R. L.

    2005-05-01

    Dielectric spectroscopy has been developed as a non-destructive technique for assessment of moisture content and structural integrity of adhesively bonded joints. Knowledge of these parameters is particularly crucial for the aerospace industry, since environmental degradation of adhesive joints presents a major limit on their utilization. High and low frequency measurements have been carried out on joints assembled from CFRP adherend, and a commercially available adhesive (AF 163-2K). The samples have been aged in deionised water at 75oC to chart the effect water ingress has on bond durability. In addition, some joints have been exposed to cryogenic temperatures to mimic the conditions joints experience whilst an aircraft is in flight. In this way it has been possible to determine the extent of degradation caused by freezing of water within the joint structure. Dielectric behaviour of the joints was studied in both the frequency and in the time domain. Frequency domain analysis allows the amount and effects of moisture ingress in the bondline to be assessed, whereas the time domain highlights the onset of joint defects with increasing exposure time. Mechanical testing of the joints has been carried out to enable correlation between changes in strength and failure mechanism due to moisture ingress, with changes in the dielectric data. In addition, dielectric studies of the neat adhesive have been undertaken, as have gravimetric and dynamic mechanical thermal analysis. These have helped reveal the effects of ageing upon the adhesive layer itself.

  8. Enhanced dielectric constant and relaxor behavior realized by dual stage sintering of Sr{sub 0.5}Ba{sub 0.5}Nb{sub 2}O{sub 6}

    SciTech Connect

    Rathore, Satyapal S. Vitta, Satish

    2014-04-24

    The relaxor ferroelectric compound, Sr{sub 0.5}Ba{sub 0.5}Nb{sub 2}O{sub 6} (SBN50) was synthesized by solid state reaction followed by sintering under two different conditions: single and dual stage sintering. The impact of sintering process on structural and dielectric properties has been studied in detail using X-ray diffraction, scanning electron microscopy and broadband dielectric spectroscopy. The crystal structure determined by performing Rietveld refinement of X-ray diffractogram was found to be identical in both cases. SBN50 crystallizes in the ferroelectric tetragonal tungsten bronze, P4bm structure. It was observed that uniform grain growth can be controlled by dual stage sintering and relatively narrow distribution of grains can be achieved with an average grain size of ∼15 μm. The dielectric studies show that SBN50 exhibits a relaxor ferroelectric behavior with the transformation taking place at ∼ 380 K due to formation of polar nano regions. Although both single and dual stage sintered SBN50 exhibits relaxor behaviour, the maximum dielectric constant of dual stage sintered SBN50 is found to be 1550 compare to 1440 for single stage sintering.

  9. High Q calcium titanate cylindrical dielectric resonators for magnetic resonance microimaging.

    PubMed

    Haines, K; Neuberger, T; Lanagan, M; Semouchkina, E; Webb, A G

    2009-10-01

    At high magnetic fields radiation losses, wavelength effects, self-resonance, and the high resistance of typical components all contribute to increased losses in conventional RF coil designs. High permittivity ceramic dielectric resonators create strong uniform magnetic fields in a compact structure at high frequencies and can potentially solve some of the challenges of high field coil design. In this study an NMR probe was constructed for operation at 600 MHz (14.1T) using an inductively fed CaTiO(3) (relative permittivity of 156) cylindrical hollow bore dielectric resonator. The design has an unmatched Q value greater than 2000, and the electric field is largely confined to the dielectric itself, with near zero values in the hollow bore which accommodates the sample. Experimental and simulation mapping of the RF field show good agreement, with the ceramic resonator giving a pulse width approximately 25% less than a loop gap resonator of similar inner dimensions. High resolution images, with voxel dimensions less than 50 microm(3), have been acquired from fixed zebrafish samples, showing excellent delineation of several fine structures. PMID:19656696

  10. High Q calcium titanate cylindrical dielectric resonators for magnetic resonance microimaging

    NASA Astrophysics Data System (ADS)

    Haines, K.; Neuberger, T.; Lanagan, M.; Semouchkina, E.; Webb, A. G.

    2009-10-01

    At high magnetic fields radiation losses, wavelength effects, self-resonance, and the high resistance of typical components all contribute to increased losses in conventional RF coil designs. High permittivity ceramic dielectric resonators create strong uniform magnetic fields in a compact structure at high frequencies and can potentially solve some of the challenges of high field coil design. In this study an NMR probe was constructed for operation at 600 MHz (14.1 T) using an inductively fed CaTiO 3 (relative permittivity of 156) cylindrical hollow bore dielectric resonator. The design has an unmatched Q value greater than 2000, and the electric field is largely confined to the dielectric itself, with near zero values in the hollow bore which accommodates the sample. Experimental and simulation mapping of the RF field show good agreement, with the ceramic resonator giving a pulse width approximately 25% less than a loop gap resonator of similar inner dimensions. High resolution images, with voxel dimensions less than 50 μm 3, have been acquired from fixed zebrafish samples, showing excellent delineation of several fine structures.

  11. Properties of nanoscale dielectrics from first principles computations

    NASA Astrophysics Data System (ADS)

    Shi, Ning

    In recent years, dielectric materials of nanoscale dimensions have aroused considerable interest. We mention two examples. First, in the semiconductor industry, in order to keep pace with Moore's law scaling, the thickness of gate oxide dielectric material is reaching nanoscale dimensions. Second, the high energy density capacitor industry is currently considering dielectric composites with a polymer host matrix filled with inorganic dielectric nanoparticles or polarizable organic molecules. The driving force for the former application is high dielectric constants (or high-k), and those for the latter are high-k and/or high dielectric breakdown strengths. Thus, it is important to characterize the electronic and dielectric properties of materials in the nano-regime, where surface and interface effects naturally play a dominant role. The primary goal of this work is to determine the extent to which such surface/interface effects modify the dielectric constants, band edges, and dielectric breakdown strengths of systems with at least one of their dimensions in the nano-regime. Towards that end, we have developed new computational methodologies at the first principles (density functional) level of theory. These methods have then been applied to several relevant and critical nanoscale systems, including Si:SiO2 and Si:HfO2 heterojunctions, and polymeric composites containing Cu-phthalocyanine and SiO2 nanoparticles.

  12. Enhanced ferroelectric and dielectric properties of (111)-oriented highly cation-ordered PbSc0.5Ta0.5O3 thin films

    NASA Astrophysics Data System (ADS)

    Chopra, Anuj; Birajdar, Balaji I.; Kim, Yunseok; Alexe, Marin; Hesse, Dietrich

    2013-12-01

    Cation-ordered (111)-oriented epitaxial PbSc0.5Ta0.5O3 (PST) thin films were deposited by pulsed laser deposition on SrRuO3-electroded SrTiO3 (111) substrates at three different temperatures of 525 °C, 550 °C, and 575 °C. All the films were well crystalline and (111)-oriented at all the three growth temperatures; however, the films deposited at the temperatures other than 550 °C exhibited the presence of a pyrochlore phase. X-ray diffraction analysis and transmission electron microscopy measurements revealed that the films were epitaxial and highly cation-ordered. In comparison to (001)-oriented PST films, (111)-oriented films on SrRuO3/SrTiO3 (111) exhibited enhanced ferroelectric and dielectric properties with a broad size distribution of cation-ordered domains (5-100 nm). At a measurement temperature of 100 K, the remnant polarization of PST (111) films is almost √3 times larger than the remnant polarization observed for (001)-oriented PST films, which is attributed to the (111) orientation of the films, as the spontaneous polarization in PST lies close to the [111] direction. The observed dielectric constant and loss at 1 kHz were around 1145 and 0.11, respectively. The dielectric constant is thus almost three times higher than for previously reported (001)-oriented PST thin films, most probably due to the enhancement in cation-ordering.

  13. Stabilization of the low temperature coefficient of dielectric constant of Ca{sub 5}Nb{sub 2}TiO{sub 12} by Zr doping

    SciTech Connect

    Cava, R.J.; Krajewski, J.J.

    1999-10-01

    Microwave communications devices involve the use of filters and resonators that have a ceramic dielectric as an essential component. To meet the requirements for use in such devices, dielectric materials must satisfy stringent property restriction. The effects of small amounts of Zr substitution for Ti in the low loss, low temperature coefficient dielectric material Ca{sub 5}Nb{sub 2}TiO{sub 12} are reported. Substitutions at the 1--5% level significantly increase the range of possible firing temperatures at which polycrystalline ceramics with low temperature coefficients can be obtained. This low temperature coefficient state is at the borderline between ordered and disordered states of the Ca, Nb, and Ti ions in the B sites of the perovskite lattice. The kinetics for ordering is apparently enhanced by the Zr substitutions.

  14. Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

    SciTech Connect

    Lu, Cimang Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira

    2015-08-17

    We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

  15. High-efficiency multilayer-dielectric diffraction gratings

    SciTech Connect

    Perry, M.D.; Boyd, R.D.; Britten, J.A.

    1996-06-01

    The ability to produce short laser pulses of extremely high power and high irradiance, as is needed for fast ignitor research in inertial confinement fusion, places increasing demands on optical components such as amplifiers, lenses, and mirrors that must remain undamaged by the radiation. The higher refractive index in the center of an intense laser beam acts as a focusing lens. The resulting wavefront distortion, left uncorrected, eventually leads to catastrophic filamentation. Major advances in energy extraction and resulting increases in focused irradiance have been made possible by the use of chirped-pulse amplification (CPA), long used in radar applications and newly applied to optical frequencies. Optical-frequency CPA systems begin with a mode-locked oscillator that produces low-energy seed pulses with durations of ten to a few hundred femtoseconds. As a result of the classical uncertainty relation between time and frequency, these short pulses have a very broad frequency distribution. A pair of diffraction gratings (or other dispersive elements) lengthens the laser pulse and induces a time-varying frequency (or chirp). Following amplification, diffraction gratings compress the pulse back to nearly the original duration. Typically a nanojoule, femtosecond pulse is stretched by a factor of several thousand and is amplified by as much as 12 orders of magnitude before recompression. By producing the short pulse only after amplification, this technique makes possible efficient extraction of energy from a variety of broadband solid state materials. Achieving high focused irradiance from a pulse ultimately requires both high peak power and excellent beam quality. There is therefore a demand for diffraction gratings that produce a high-quality diffracted wavefront, have high diffraction efficiency, and exhibit a high threshold for laser damage.

  16. High Frequency, High Gradient Dielectric Wakefield Acceleration Experiments at SLAC and BNL

    NASA Astrophysics Data System (ADS)

    Rosenzweig, J. B.; Andonian, G.; Muggli, P.; Niknejadi, P.; Travish, G.; Williams, O.; Xuan, K.; Yakimenko, V.

    2010-11-01

    Given the recent success of >GV/m dielectric wakefield accelerator (DWA) breakdown experiments at SLAC, and follow-on coherent Cerenkov radiation (CCR) production at the UCLA Neptune, a UCLA-USC-SLAC collaboration is now implementing a new set of experiments that explore various DWA scenarios. These experiments are motivated by the opportunities presented by the approval of the FACET facility at SLAC, as well as unique pulse-train wakefield drivers at BNL. The SLAC experiments permit further exploration of the multi-GeV/m envelope in DWAs, and will entail investigations of novel materials (e.g. CVD diamond) and geometries (Bragg cylindrical structures, slab-symmetric DWAs), and have an over-riding goal of demonstrating >GeV acceleration in ˜33 cm DWA tubes. In the nearer term before FACET's commissioning, we are performing measurements at the BNL ATF, in which we drive ˜50-200 MV/m fields with single pulses or pulse trains, and observe resonantly driven CCR as well as deflection modes. These experiments are of high relevance to enhancing linear collider DWA designs, as they will demonstrate potential for high efficiency operation with pulse trains, and explore transverse modes for the first time.

  17. High Frequency, High Gradient Dielectric Wakefield Acceleration Experiments at SLAC and BNL

    SciTech Connect

    Rosenzweig, J. B.; Andonian, G.; Niknejadi, P.; Travish, G.; Williams, O.; Xuan, K.; Muggli, P.; Yakimenko, V.

    2010-11-04

    Given the recent success of >GV/m dielectric wakefield accelerator (DWA) breakdown experiments at SLAC, and follow-on coherent Cerenkov radiation (CCR) production at the UCLA Neptune, a UCLA-USC-SLAC collaboration is now implementing a new set of experiments that explore various DWA scenarios. These experiments are motivated by the opportunities presented by the approval of the FACET facility at SLAC, as well as unique pulse-train wakefield drivers at BNL. The SLAC experiments permit further exploration of the multi-GeV/m envelope in DWAs, and will entail investigations of novel materials (e.g. CVD diamond) and geometries (Bragg cylindrical structures, slab-symmetric DWAs), and have an over-riding goal of demonstrating >GeV acceleration in {approx}33 cm DWA tubes. In the nearer term before FACET's commissioning, we are performing measurements at the BNL ATF, in which we drive {approx}50-200 MV/m fields with single pulses or pulse trains, and observe resonantly driven CCR as well as deflection modes. These experiments are of high relevance to enhancing linear collider DWA designs, as they will demonstrate potential for high efficiency operation with pulse trains, and explore transverse modes for the first time.

  18. Reconfigurable all-dielectric metamaterial frequency selective surface based on high-permittivity ceramics

    NASA Astrophysics Data System (ADS)

    Li, Liyang; Wang, Jun; Wang, Jiafu; Ma, Hua; Du, Hongliang; Zhang, Jieqiu; Qu, Shaobo; Xu, Zhuo

    2016-04-01

    Based on effective medium theory and dielectric resonator theory, we propose the design of reconfigurable all-dielectric metamaterial frequency selective surfaces (FSSs) using high-permittivity ceramics. The FSS is composed of ceramic resonators with different band stop responses under front and side incidences. By mechanically tuning the orientation of the ceramic resonators, reconfigurable electromagnetic (EM) responses between two adjacent stopbands can be achieved. The two broad stopbands originate from the first two resonant modes of the ceramic resonators. As an example, a reconfigurable FSS composed of cross-shaped ceramic resonators is demonstrated. Both numerical and experimental results show that the FSS can switch between two consecutive stopbands in 3.55–4.60 GHz and 4.54–4.94 GHz. The design method can be readily extended to the design of FSSs in other frequencies for high-power applications.

  19. Reconfigurable all-dielectric metamaterial frequency selective surface based on high-permittivity ceramics

    PubMed Central

    Li, Liyang; Wang, Jun; Wang, Jiafu; Ma, Hua; Du, Hongliang; Zhang, Jieqiu; Qu, Shaobo; Xu, Zhuo

    2016-01-01

    Based on effective medium theory and dielectric resonator theory, we propose the design of reconfigurable all-dielectric metamaterial frequency selective surfaces (FSSs) using high-permittivity ceramics. The FSS is composed of ceramic resonators with different band stop responses under front and side incidences. By mechanically tuning the orientation of the ceramic resonators, reconfigurable electromagnetic (EM) responses between two adjacent stopbands can be achieved. The two broad stopbands originate from the first two resonant modes of the ceramic resonators. As an example, a reconfigurable FSS composed of cross-shaped ceramic resonators is demonstrated. Both numerical and experimental results show that the FSS can switch between two consecutive stopbands in 3.55–4.60 GHz and 4.54–4.94 GHz. The design method can be readily extended to the design of FSSs in other frequencies for high-power applications. PMID:27052098

  20. Extended dielectric relaxation scheme for fluid transport simulations of high density plasma discharges

    NASA Astrophysics Data System (ADS)

    Kwon, Deuk-Chul; Song, Mi-Young; Yoon, Jung-Sik

    2014-10-01

    It is well known that the dielectric relaxation scheme (DRS) can efficiently overcome the limitation on the simulation time step for fluid transport simulations of high density plasma discharges. By imitating a realistic and physical shielding process of electric field perturbation, the DRS overcomes the dielectric limitation on time step. However, the electric field was obtained with assuming the drift-diffusion approximation. Although the drift-diffusion expressions are good approximations for both the electrons and ions at high pressure, the inertial term cannot be neglected in the ion momentum equation for low pressure. Therefore, in this work, we developed the extended DRS by introducing an effective electric field. To compare the extended DRS with the previous method, two-dimensional fluid simulations for inductively coupled plasma discharges were performed. This work was supported by the Industrial Strategic Technology Development Program (10041637, Development of Dry Etch System for 10 nm class SADP Process) funded by the Ministry of Knowledge Economy (MKE, Korea).