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Sample records for high quality gan

  1. MBE grown high quality GaN films and devices

    NASA Astrophysics Data System (ADS)

    Kim, W.; Aktas, O.; Salvador, A.; Botchkarev, A.; Sverdlov, B.; Mohammad, S. N.; Morkoç, H.

    1997-02-01

    GaN films with much improved structural, transport, and optical properties have been prepared by molecular beam epitaxy using NH 3 as a nitrogen source. Films with a wide range of resistivity, including highly resistive ones, were grown with a chosen growth rate of 1.2 μm/h. The electron mobility in modulation doped structures is about 450 and 850 cm 2/Vs at 300 and 77 K, respectively, with an areal carrier concentration of about 10 13 cm -2. Low temperature luminescence shows A- and B-free-excitons as well as the excited state of the A- and B-excitons, the first known observation, attesting to the quality of the samples. These transition energies are consistent with the best MOCVD samples and represent a sizable reduction of the pandemic zincblende phase in MBE grown films. The high quality of films was demonstrated by the realization of high performance MODFETs and Schottky diodes.

  2. A new system for synthesis of high quality nonpolar GaN thin films.

    PubMed

    Li, Guoqiang; Shih, Shao-Ju; Fu, Zhengyi

    2010-02-28

    High quality nonpolar m-plane GaN films were successfully grown on LiGaO(2) (100) substrates for the first time. This m-plane GaN/LiGaO(2) (100) system opens a new approach for realizing highly-efficient nitride devices. PMID:20449251

  3. Growth of high quality GaN layer on carbon nanotube-graphene network structure as intermediate layer

    NASA Astrophysics Data System (ADS)

    Seo, Taeo Hoon; Park, Ah Hyun; Park, Sungchan; Kim, Myung Jong; Suh, Eun-Kyung

    2015-03-01

    In general, high-quality GaN layers are synthesized on low-temperature (LT) GaN buffer layer on a single crystal sapphire substrate. However, large differences in fundamental properties such as lattice constants and thermal expansion coefficients between GaN layer and sapphire substrate generate high density of threading dislocation (TD) that leads to deterioration of optical and structural properties. Graphene has been attracting much attention due to its excellent physical properties However, direct epitaxial growth of GaN film onto graphene layer on substrates is not easily accessible due to the lack of chemical reactivity on graphene which consisted of C-C bond of sp2 hexagonally arranged carbon atoms with no dangling bonds. In this work, an intermediate layer for the GaN growth on sapphire substrate was constructed by inserting carbon nanotubes and graphene hybrid structure (CGH) Optical and structural properties of GaN layer grown on CGH were compared with those of GaN layer directly grown on sapphire CNTs act as nucleation sites and play a crucial role in the growth of single crystal high-quality GaN on graphene layer. Also, graphene film acts as a mask for epitaxial lateral overgrowth of GaN layer, which can effectively reduce TD density. A grant from the Korea Institute of Science and Technology (KIST) institutional program.

  4. Initial growth control of GaN on Si with physical-vapor-deposition-AlN seed layer for high-quality GaN templates

    NASA Astrophysics Data System (ADS)

    Wang, Hongbo; Sodabanlu, Hassanet; Daigo, Yoshiaki; Seino, Takuya; Nakagawa, Takashi; Sugiyama, Masakazu

    2016-05-01

    An ex situ AlN seed layer was formed by physical vapor deposition (PVD) on a Si substrate, aiming at the production of high-quality GaN on Si by metal–organic vapor-phase epitaxy. A low density of initial GaN islands were obtained by reducing the trimethylgallium (TMGa) flow rate. The dislocation density of GaN was dramatically reduced with 3D growth compared with 2D growth, as indicated by measurements of XRD rocking curves (FWHM of 384 and 461 arcsec for 0002 and 10\\bar{1}0 diffractions, respectively) and cathodoluminescence (CL) mapping (dark-spot density of 3.4 × 108 cm‑2) for 1-µm-thick crack-free GaN on a Si substrate. The values were almost equivalent to those of the layers grown on sapphire substrates.

  5. High Quality, Low Cost Ammonothermal Bulk GaN Substrates

    SciTech Connect

    Ehrentraut, D; Pakalapati, RT; Kamber, DS; Jiang, WK; Pocius, DW; Downey, BC; McLaurin, M; D'Evelyn, MP

    2013-12-18

    Ammonothermal GaN growth using a novel apparatus has been performed on c-plane, m-plane, and semipolar seed crystals with diameters between 5 mm and 2 in. to thicknesses of 0.5-3 mm. The highest growth rates are greater than 40 mu m/h and rates in the 10-30 mu m/h range are routinely observed for all orientations. These values are 5-100x larger than those achieved by conventional ammonothermal GaN growth. The crystals have been characterized by X-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), optical spectroscopy, and capacitance-voltage measurements. The crystallinity of the grown crystals is similar to or better than that of the seed crystals, with FWHM values of about 20-100 arcsec and dislocation densities of 1 x 10(5)-5 x 10(6) cm(-2). Dislocation densities below 10(4) cm(-2) are observed in laterally-grown crystals. Epitaxial InGaN quantum well structures have been successfully grown on ammonothermal wafers. (C) 2013 The Japan Society of Applied Physics

  6. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

    PubMed Central

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-01-01

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates. PMID:27101930

  7. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

    NASA Astrophysics Data System (ADS)

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-04-01

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

  8. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

    PubMed

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-01-01

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates. PMID:27101930

  9. GaN High Power Devices

    SciTech Connect

    PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

    2000-07-17

    A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

  10. Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.

    PubMed

    Feng, Xiaohui; Yu, Tongjun; Wei, Yang; Ji, Cheng; Cheng, Yutian; Zong, Hua; Wang, Kun; Yang, Zhijian; Kang, Xiangning; Zhang, Guoyi; Fan, Shoushan

    2016-07-20

    A novel nanoheteroepitaxy method, namely, the grouped and multistep nanoheteroepitaxy (GM-NHE), is proposed to attain a high-quality gallium nitride (GaN) epilayer by metal-organic vapor phase epitaxy. This method combines the effects of sub-100 nm nucleation and multistep lateral growth by using a low-cost but unique carbon nanotube mask, which consists of nanoscale growth windows with a quasi-periodic 2D fill factor. It is found that GM-NHE can facilely reduce threading dislocation density (TDD) and modulate residual stress on foreign substrate without any regrowth. As a result, high-quality GaN epilayer is produced with homogeneously low TDD of 4.51 × 10(7) cm(-2) and 2D-modulated stress, and the performance of the subsequent 410 nm near-ultraviolet light-emitting diode is greatly boosted. In this way, with the facile fabrication of nanomask and the one-off epitaxy procedure, GaN epilayer is prominently improved with the assistance of nanotechnology, which demonstrates great application potential for high-efficiency TDD-sensitive optoelectronic and electronic devices. PMID:27351723

  11. GaN Electronics For High Power, High Temperature Applications

    SciTech Connect

    PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHU,S.N.G.

    2000-06-12

    A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers. GaN/AlGaN heterojunction bipolar transistors and GaN metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

  12. Fabrication of high-quality \\{11\\bar{2}2\\} GaN substrates using the Na flux method

    NASA Astrophysics Data System (ADS)

    Maruyama, Mihoko; Nakamura, Koshi; Che, Songbek; Murakami, Kosuke; Takazawa, Hideo; Imanishi, Masayuki; Imade, Mamoru; Morita, Yukihiro; Mori, Yusuke

    2016-05-01

    Gallium nitride (GaN) substrates fabricated along the nonpolar and semipolar directions are the most promising materials for realizing optical and electronic devices with low power consumption. In this study, we carry out the Na flux growth on \\{ 11\\bar{2}2\\} -plane GaN templates grown heteroepitaxially on sapphires. The GaN crystals are grown at low supersaturation using the Na flux method with the dipping technique. The crystallinity of the grown GaN crystals is improved compared to that of the seed substrates. Then it improves further by lowering the supersaturation. Finally, we succeed in fabricating a 2-in. \\{ 11\\bar{2}2\\} -plane GaN single crystal with high transparency and crystallinity.

  13. High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

    SciTech Connect

    Gacevic, Z.; Fernandez-Garrido, S.; Calleja, E.; Estrade, S.

    2011-07-18

    We report on properties of high quality {approx}60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be {+-} 1.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.

  14. High-quality InN films on GaN using graded InGaN buffers by MBE

    NASA Astrophysics Data System (ADS)

    Islam, SM; Protasenko, Vladimir; Rouvimov, Sergei; (Grace Xing, Huili; Jena, Debdeep

    2016-05-01

    The growth of high-quality thick InN films is challenging because of the lack of native substrates. In this work, we demonstrate the use of a linearly graded InGaN buffer layer for the growth of InN films on GaN substrates. A 500 nm InN film with <0.1 nm RMS roughness is obtained with a peak mobility of 1410 cm2/(V·s) at 300 K. A strong room temperature photoluminescence showing a bandgap of 0.65 eV with 79 meV linewidth is observed. A graded InGaN buffer is found to lead to extremely smooth and high-quality InN films.

  15. High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds

    NASA Astrophysics Data System (ADS)

    Tsukada, Yusuke; Enatsu, Yuuki; Kubo, Shuichi; Ikeda, Hirotaka; Kurihara, Kaori; Matsumoto, Hajime; Nagao, Satoru; Mikawa, Yutaka; Fujito, Kenji

    2016-05-01

    In this paper, we discusse the origin of basal-plane stacking faults (BSFs) generated in the homoepitaxial hydride vapor phase epitaxy (HVPE) growth of m-plane gallium nitride (GaN). We investigated the effects of seed quality, especially dislocation density, on BSF generation during homoepitaxy. The results clearly identify basal-plane dislocation in the seed as a cause of BSF generation. We realized high-quality m-plane GaN substrates with a 2-in. diameter using HVPE on low-dislocation-density m-plane seeds.

  16. Influence of High Nitrogen Flux on Crystal Quality of Plasma-Assisted MBE Grown GaN Layers Using Raman Spectroscopy: Part-II

    SciTech Connect

    Asghar, M.; Hussain, I.; Islah u din; Saleemi, F.

    2007-05-09

    We have investigated lattice properties of plasma assisted MBE grown hexagonal GaN layers at varying nitrogen and gallium fluxes using Raman spectroscopy. Room temperature Raman spectra of Ga-rich layers and stoichiometric GaN are similar showing excitation modes at 434 cm-1, 567 cm-1 and 729 cm-1 identified as residual laser line, E{sub 2}{sup H} and A1(LO) mode, respectively. Similarity of Ga-rich and stoichiometric GaN layers is interpreted as the indication of comparable crystal quality of both GaN layers. In contrast, Raman scattering associated with N-rich GaN samples mere exhibit a broad band of excitations in the range of 250-650cm-1 leaving out A1(LO) mode. This typical observation along with intensity distribution of the peaks, is correlated with rough surface, bad crystal quality and high concentration of defects. Based on atomic displacement scheme, the broad band is identified as Ga- vacancies.

  17. High optical and structural quality of GaN epilayers grown on (2{sup ¯}01) β-Ga{sub 2}O{sub 3}

    SciTech Connect

    Muhammed, M. M.; Roqan, I. S.; Peres, M.; Franco, N.; Lorenz, K.; Yamashita, Y.; Morishima, Y.; Sato, S.; Kuramata, A.

    2014-07-28

    Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2{sup ¯}01) oriented β-Ga{sub 2}O{sub 3} has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2{sup ¯}01) oriented β-Ga{sub 2}O{sub 3} are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼10{sup 8 }cm{sup −2}. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2{sup ¯}01) β-Ga{sub 2}O{sub 3} with in-plane epitaxial orientation relationships between the β-Ga{sub 2}O{sub 3} and the GaN thin film defined by (010) β-Ga{sub 2}O{sub 3} || (112{sup ¯}0) GaN and (2{sup ¯}01) β-Ga{sub 2}O{sub 3} || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high.

  18. Determination of absolute value of quantum efficiency of radiation in high quality GaN single crystals using an integrating sphere

    NASA Astrophysics Data System (ADS)

    Kojima, Kazunobu; Ohtomo, Tomomi; Ikemura, Ken-ichiro; Yamazaki, Yoshiki; Saito, Makoto; Ikeda, Hirotaka; Fujito, Kenji; Chichibu, Shigefusa F.

    2016-07-01

    Omnidirectional photoluminescence (ODPL) measurement using an integrating sphere was carried out to absolutely quantify the quantum efficiency of radiation ( η) in high quality GaN single crystals. The total numbers of photons belonging to photoluminescence (PL photons) and photons belonging to an excitation source (excitation photons) were simultaneously counted in the measurement, and η was defined as a ratio of the number of PL photons to the number of absorbed excitation photons. The ODPL spectra near the band edge commonly showed a two-peak structure, which originates from the sharp absorption edge of GaN. A methodology for quantifying internal quantum efficiency ( ηint ) from such experimentally obtained η is derived. A record high ηint of typically 15% is obtained for a freestanding GaN crystal grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method using an acidic mineralizer, when the excitation photon energy and power density were 3.81 eV and 60 W/cm2, respectively.

  19. High-quality GaN epilayer grown by newly designed horizontal counter-flow MOCVD reactor

    NASA Astrophysics Data System (ADS)

    Lee, Cheul-Ro; Son, Sung-Jin; Lee, In-Hwan; Leem, Jae-Young; Noh, Sam Kyu

    1997-12-01

    We have fabricated a newly designed horizontal counter-flow reactor for growing high-quality III-V nitrides and characterized the GaN/sapphire(0 0 0 1) grown in it. The surface morphology of the film was featureless and smooth without any defects such as hillocks or truncated hexagonals. The measured background concentration and carrier mobility of the film 1.5 m thick are 4 × 1017/cm3 and 180 cm2/V s, respectively. The defect density measured by TEM is about 1 × 109/cm2 and the FWHM of DCX-ray curving is 336 arcsec, respectively. This crystallinity is similar to what was commonly obtained for GaN on sapphire until recently. The FWHM of the band-edge emission peak measured by PL at room temperature is typically around 14 and 4 meV for the main extonic peak(DBE) at 10 K. Except DBE at 3.490 eV, two minor structures are detected on the high-energy and low-energy shoulder of DBE at 3.498 eV(FE) and 3.483(ABE).

  20. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE PAGESBeta

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  1. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; Kravchenko, I. I.; Zhang, Ming-Lan

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.

  2. High nitrogen pressure solution growth of GaN

    NASA Astrophysics Data System (ADS)

    Bockowski, Michal

    2014-10-01

    Results of GaN growth from gallium solution under high nitrogen pressure are presented. Basic of the high nitrogen pressure solution (HNPS) growth method is described. A new approach of seeded growth, multi-feed seed (MFS) configuration, is demonstrated. The use of two kinds of seeds: free-standing hydride vapor phase epitaxy GaN (HVPE-GaN) obtained from metal organic chemical vapor deposition (MOCVD)-GaN/sapphire templates and free-standing HVPE-GaN obtained from the ammonothermally grown GaN crystals, is shown. Depending on the seeds’ structural quality, the differences in the structural properties of pressure grown material are demonstrated and analyzed. The role and influence of impurities, like oxygen and magnesium, on GaN crystals grown from gallium solution in the MFS configuration is presented. The properties of differently doped GaN crystals are discussed. An application of the pressure grown GaN crystals as substrates for electronic and optoelectronic devices is reported.

  3. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    PubMed Central

    Muhammed, M. M.; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, I. A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, I. S.

    2016-01-01

    We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design. PMID:27412372

  4. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer.

    PubMed

    Muhammed, M M; Roldan, M A; Yamashita, Y; Sahonta, S-L; Ajia, I A; Iizuka, K; Kuramata, A; Humphreys, C J; Roqan, I S

    2016-01-01

    We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 10(7) cm(-2)) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1-xN epilayers can be achieved with high optical quality of InxGa1-xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design. PMID:27412372

  5. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    NASA Astrophysics Data System (ADS)

    Muhammed, M. M.; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, I. A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, I. S.

    2016-07-01

    We demonstrate the high structural and optical properties of InxGa1‑xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm‑2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1‑xN epilayers can be achieved with high optical quality of InxGa1‑xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  6. High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers

    NASA Astrophysics Data System (ADS)

    Fini, P.; Zhao, L.; Moran, B.; Hansen, M.; Marchand, H.; Ibbetson, J. P.; DenBaars, S. P.; Mishra, U. K.; Speck, J. S.

    1999-09-01

    We have characterized GaN stripes grown by lateral epitaxial overgrowth on large-area (2 in.) SiO2/GaN/Al2O3 wafers by low-pressure metalorganic chemical vapor deposition before and after coalescence. Using scanning electron microscopy, x-ray diffraction (XRD), transmission electron microscopy (TEM), and atomic force microscope (AFM), it is shown that by first obtaining "wings" (laterally overgrown material) with low tilt relative to the "seed" (underlying) GaN, very few extended defects are formed when wings from neighboring stripes coalesce. After wings with a tilt of ˜0.1° are coalesced and an additional ˜10 μm of GaN is grown, it is found with XRD that peak splitting due to tilt is no longer detectable. TEM and AFM results show that few dislocations (with a linear density <4×103cm-1) are formed at coalescence fronts.

  7. High-Temperature Growth of GaN Single Crystals Using Li-Added Na-Flux Method

    NASA Astrophysics Data System (ADS)

    Honjo, Masatomo; Imabayashi, Hiroki; Takazawa, Hideo; Todoroki, Yuma; Matsuo, Daisuke; Murakami, Kosuke; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Sasaki, Takatomo; Mori, Yusuke

    2012-12-01

    The Na-flux method is a promising for fabricating GaN crystals with high quality. In our previous study, we found that the surface morphology and transparency of these crystals were improved by raising the growth temperature. Increasing the threshold pressure of nitrogen for GaN growth, however, made GaN growth at high temperatures difficult. In this study, we attempted to grow GaN crystals by the Na-flux method with the addition of Li to the flux, which promoted the solubility of nitrogen in the flux. As a result, the threshold pressure of nitrogen for GaN growth decreased, and GaN crystals with high crystallinity were grown at 900 °C. In addition, we found that the crystallinity of the grown GaN crystals was improved and the concentration of impurities in the grown GaN crystals was decreased by raising the growth temperature.

  8. Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Junsong, Cao; Xin, Lü; Lubing, Zhao; Shuang, Qu; Wei, Gao

    2015-02-01

    The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode.

  9. Thick (>20 µm) and high-resistivity carbon-doped GaN-buffer layers grown by metalorganic vapor phase epitaxy on n-type GaN substrates

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Tomonobu; Terano, Akihisa; Mochizuki, Kazuhiro

    2016-05-01

    To improve the performance of GaN power devices, we have investigated the crystalline quality of thick (>20 µm) carbon-doped GaN layers on n-type GaN substrates and templates. The surface morphologies and X-ray rocking curves of carbon-doped GaN layers were improved by using GaN substrates. However, the crystalline quality degraded when the carbon concentration was too high (1 × 1020 cm‑3), even in the case of GaN substrates. High breakdown voltages (approximately 7 kV under a lateral configuration) were obtained for the carbon-doped GaN layers on n-type GaN substrates when the carbon concentration was 5 × 1019 cm‑3. These results indicate that lateral power devices with high breakdown voltage can be fabricated by using thick carbon-doped GaN buffer layers, even on n-type GaN substrates.

  10. High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Koblmueller, G.; Wu, F.; Mates, T.; Speck, J. S.; Fernandez-Garrido, S.; Calleja, E.

    2007-11-26

    An alternative approach is presented for the plasma-assisted molecular beam epitaxy of high-quality GaN. Under N-rich growth conditions, an unexpected layer-by-layer growth mode was found for a wide range of growth temperatures in the GaN thermal decomposition regime (>750 deg. C). Consequently, superior surface morphologies with roughness of less than 1 nm (rms) have been achieved. For lightly Si-doped GaN films, room-temperature electron mobilities exceeding 1100 cm{sup 2}/V s were measured, surpassing the commonly insulating nature of GaN grown under N-rich conditions at low temperature.

  11. High-resistance GaN epilayers with low dislocation density via growth mode modification

    NASA Astrophysics Data System (ADS)

    Xu, Z. Y.; Xu, F. J.; Wang, J. M.; Lu, L.; Yang, Z. J.; Wang, X. Q.; Shen, B.

    2016-09-01

    High-resistance GaN with low dislocation density adopting growth mode modification has been investigated by metalorganic chemical vapor deposition. The sheet resistance of the order of 1016 Ω/sq has been achieved at room temperature by diminishing the oxygen impurity level close to the substrate with an AlN blocking layer. Attributed to this method which offers more freedom to tailor the growth mode, a three-dimensional (3D) growth process is introduced by adjusting the growth pressure and temperature at the initial stage of the GaN epitaxy to improve the crystalline quality. The large 3D GaN grains formed during this period roughen the surface, and the following coalescence of the GaN grains causes threading dislocations bending, which finally remarkably reduces the dislocation density.

  12. Novel high frequency devices with graphene and GaN

    NASA Astrophysics Data System (ADS)

    Zhao, Pei

    This work focuses on exploring new materials and new device structures to develop novel devices that can operate at very high speed. In chapter 2, the high frequency performance limitations of graphene transistor with channel length less than 100 nm are explored. The simulated results predict that intrinsic cutoff frequency fT of graphene transistor can be close to 2 THz at 15 nm channel length. In chapter 3, we explored the possibility of developing a 2D materials based vertical tunneling device. An analytical model to calculate the channel potentials and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The symmetric resonant peak in SymFET is a good candidate for high-speed analog applications. Rest of the work focuses on Gallium Nitride (GaN), several novel device concepts based on GaN heterostructure have been proposed for high frequency and high power applications. In chapter 4, we compared the performance of GaN Schottky diodes on bulk GaN substrates and GaN-on-sapphire substrates. In addition, we also discussed the lateral GaN Schottky diode between metal/2DEGs. The advantage of lateral GaN Schottky diodes is the intrinsic cutoff frequency is in the THz range. In chapter 5, a GaN Heterostructure barrier diode (HBD) is designed using the polarization charge and band offset at the AlGaN/GaN heterojunction. The polarization charge at AlGaN/GaN interface behaves as a delta-doping which induces a barrier without any chemical doping. The IV characteristics can be explained by the barrier controlled thermionic emission current. GaN HBDs can be directly integrated with GaN HEMTs, and serve as frequency multipliers or mixers for RF applications. In chapter 6, a GaN based negative effective mass oscillator (NEMO) is proposed. The current in NEMO is estimated under the ballistic limits. Negative differential resistances (NDRs) can be observed with more than 50% of the injected electrons occupied the negative

  13. Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target

    SciTech Connect

    Kushvaha, S. S.; Kumar, M. Senthil; Maurya, K. K.; Dalai, M. K.; Sharma, Nita D.

    2013-09-15

    Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001) substrates by laser molecular beam epitaxy (LMBE) were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM), micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS). The x-ray rocking curve full width at a half maximum (FWHM) value for (0002) reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002) plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

  14. High Voltage GaN Schottky Rectifiers

    SciTech Connect

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  15. O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Huang, Sen; Liu, Xinyu; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Sun, Bing; Yang, Xuelin; Shen, Bo; Liu, Cheng; Liu, Shenghou; Hua, Mengyuan; Yang, Shu; Chen, Kevin J.

    2015-01-01

    High quality Al2O3 film grown by atomic layer deposition (ALD), with ozone (O3) as oxygen source, is demonstrated for fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Significant suppression of Al-O-H and Al-Al bonds in ALD-Al2O3 has been realized by substituting conventional H2O source with O3. A high dielectric breakdown E-field of 8.5 MV/cm and good TDDB behavior are achieved in a gate dielectric stack consisting of 13-nm O3-Al2O3 and 2-nm H2O-Al2O3 interfacial layer on recessed GaN. By using this 15-nm gate dielectric and a high-temperature gate-recess technique, the density of positive bulk/interface charges in normally-off AlGaN/GaN MIS-HEMTs is remarkably suppressed to as low as 0.9 × 1012 cm-2, contributing to the realization of normally-off operation with a high threshold voltage of +1.6 V and a low specific ON-resistance RON,sp of 0.49 mΩ cm2.

  16. Dual-color emitting quantum-dot-quantum-well CdSe-ZnS heteronanocrystals hybridized on InGaN /GaN light emitting diodes for high-quality white light generation

    NASA Astrophysics Data System (ADS)

    Nizamoglu, Sedat; Mutlugun, Evren; Özel, Tuncay; Demir, Hilmi Volkan; Sapra, Sameer; Gaponik, Nikolai; Eychmüller, Alexander

    2008-03-01

    We report white light generation by hybridizing green-red emitting (CdSe)ZnS/CdSe (core)shell/shell quantum-dot-quantum-well heteronanocrystals on blue InGaN /GaN light emitting diodes with the photometric properties of tristimulus coordinates (x,y)=(0.36,0.30), luminous efficacy of optical radiation LE =278lm/W, correlated color temperature CCT =3929K, and color-rendering index CRI =75.1. We present the photometric analysis and the quantum mechanical design of these dual-color emitting heteronanocrystals synthesized to achieve high-quality white light when hybridized on light emitting diodes. Using such multicolor emitting heteronanocrystals facilitates simple device implementation while providing good photometric properties.

  17. High-Sensitivity GaN Microchemical Sensors

    NASA Technical Reports Server (NTRS)

    Son, Kyung-ah; Yang, Baohua; Liao, Anna; Moon, Jeongsun; Prokopuk, Nicholas

    2009-01-01

    Systematic studies have been performed on the sensitivity of GaN HEMT (high electron mobility transistor) sensors using various gate electrode designs and operational parameters. The results here show that a higher sensitivity can be achieved with a larger W/L ratio (W = gate width, L = gate length) at a given D (D = source-drain distance), and multi-finger gate electrodes offer a higher sensitivity than a one-finger gate electrode. In terms of operating conditions, sensor sensitivity is strongly dependent on transconductance of the sensor. The highest sensitivity can be achieved at the gate voltage where the slope of the transconductance curve is the largest. This work provides critical information about how the gate electrode of a GaN HEMT, which has been identified as the most sensitive among GaN microsensors, needs to be designed, and what operation parameters should be used for high sensitivity detection.

  18. O{sub 3}-sourced atomic layer deposition of high quality Al{sub 2}O{sub 3} gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

    SciTech Connect

    Huang, Sen; Liu, Xinyu Wei, Ke; Liu, Guoguo; Wang, Xinhua; Sun, Bing; Yang, Xuelin; Shen, Bo; Liu, Cheng; Liu, Shenghou; Hua, Mengyuan; Yang, Shu; Chen, Kevin J.

    2015-01-19

    High quality Al{sub 2}O{sub 3} film grown by atomic layer deposition (ALD), with ozone (O{sub 3}) as oxygen source, is demonstrated for fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Significant suppression of Al–O–H and Al–Al bonds in ALD-Al{sub 2}O{sub 3} has been realized by substituting conventional H{sub 2}O source with O{sub 3}. A high dielectric breakdown E-field of 8.5 MV/cm and good TDDB behavior are achieved in a gate dielectric stack consisting of 13-nm O{sub 3}-Al{sub 2}O{sub 3} and 2-nm H{sub 2}O-Al{sub 2}O{sub 3} interfacial layer on recessed GaN. By using this 15-nm gate dielectric and a high-temperature gate-recess technique, the density of positive bulk/interface charges in normally-off AlGaN/GaN MIS-HEMTs is remarkably suppressed to as low as 0.9 × 10{sup 12 }cm{sup −2}, contributing to the realization of normally-off operation with a high threshold voltage of +1.6 V and a low specific ON-resistance R{sub ON,sp} of 0.49 mΩ cm{sup 2}.

  19. High Efficiency m-plane LEDs on Low Defect Density Bulk GaN Substrates

    SciTech Connect

    David, Aurelien

    2012-10-15

    Solid-state lighting is a key technology for reduction of energy consumption in the US and worldwide. In principle, by replacing standard incandescent bulbs and other light sources with sources based on light-emitting diodes (LEDs), ultimate energy efficiency can be achieved. The efficiency of LEDs has improved tremendously over the past two decades, however further progress is required for solid- state lighting to reach its full potential. The ability of an LED at converting electricity to light is quantified by its internal quantum efficiency (IQE). The material of choice for visible LEDs is Gallium Nitride (GaN), which is at the basis of blue-emitting LEDs. A key factor limiting the performance of GaN LEDs is the so-called efficiency droop, whereby the IQE of the LED decreases significantly at high current density. Despite decades of research, efficiency droop remains a major issue. Since high-current operation is necessary for practical lighting applications, reducing droop is a major challenge for the scientific community and the LED industry. Our approach to solving the droop issue is the use of newly available low-defect-density bulk GaN non-polar substrates. In contrast to the standard foreign substrates (sapphire, silicon carbide, silicon) used in the industry, we have employed native bulk GaN substrates with very low defect density, thus ensuring exquisite material quality and high IQE. Whereas all commercial LEDs are grown along the c-plane crystal direction of GaN, we have used m-plane non-polar substrates; these drastically modify the physical properties of the LED and enable a reduction of droop. With this approach, we have demonstrated very high IQE performance and low droop. Our results focused on violet and blue LEDs. For these, we have demonstrated very high peak IQEs and current droops of 6% and 10% respectively (up to a high current density of 200A.cm-2). All these results were obtained under electrical operation. These high IQE and low droop

  20. Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.

    PubMed

    Wölz, M; Hauswald, C; Flissikowski, T; Gotschke, T; Fernández-Garrido, S; Brandt, O; Grahn, H T; Geelhaar, L; Riechert, H

    2015-06-10

    Vertical GaN nanowires are grown in a self-induced way on a sputtered Ti film by plasma-assisted molecular beam epitaxy. Both in situ electron diffraction and ex situ ellipsometry show that Ti is converted to TiN upon exposure of the surface to the N plasma. In addition, the ellipsometric data demonstrate this TiN film to be metallic. The diffraction data evidence that the GaN nanowires have a strict epitaxial relationship to this film. Photoluminescence spectroscopy of the GaN nanowires shows excitonic transitions virtually identical in spectral position, line width, and decay time to those of state-of-the-art GaN nanowires grown on Si. Therefore, the crystalline quality of the GaN nanowires grown on metallic TiN and on Si is equivalent. The freedom to employ metallic substrates for the epitaxial growth of semiconductor nanowires in high structural quality may enable novel applications that benefit from the associated high thermal and electrical conductivity as well as optical reflectivity. PMID:26001039

  1. Improvement of optical quality of semipolar (11 2 ¯ 2 ) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth

    NASA Astrophysics Data System (ADS)

    Monavarian, Morteza; Izyumskaya, Natalia; Müller, Marcus; Metzner, Sebastian; Veit, Peter; Can, Nuri; Das, Saikat; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis; Avrutin, Vitaliy

    2016-04-01

    Among the major obstacles for development of non-polar and semipolar GaN structures on foreign substrates are stacking faults which deteriorate the structural and optical quality of the material. In this work, an in-situ SiNx nano-network has been employed to achieve high quality heteroepitaxial semipolar (11 2 ¯ 2 ) GaN on m-plane sapphire with reduced stacking fault density. This approach involves in-situ deposition of a porous SiNx interlayer on GaN that serves as a nano-mask for the subsequent growth, which starts in the nanometer-sized pores (window regions) and then progresses laterally as well, as in the case of conventional epitaxial lateral overgrowth (ELO). The inserted SiNx nano-mask effectively prevents the propagation of defects, such as dislocations and stacking faults, in the growth direction and thus reduces their density in the overgrown layers. The resulting semipolar (11 2 ¯ 2 ) GaN layers exhibit relatively smooth surface morphology and improved optical properties (PL intensity enhanced by a factor of 5 and carrier lifetimes by 35% to 85% compared to the reference semipolar (11 2 ¯ 2 ) GaN layer) which approach to those of the c-plane in-situ nano-ELO GaN reference and, therefore, holds promise for light emitting and detecting devices.

  2. Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.

    SciTech Connect

    Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

    2005-12-01

    GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art

  3. Highly Uniform Characteristics of GaN Nanorods Grown on Si(111) by Metalorganic Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Ra, Yong-Ho; Navamathavan, Rangaswamy; Park, Ji-Hyeon; Song, Ki-Young; Lee, Young-Min; Kim, Dong-Wook; Jun, Baek Byung; Lee, Cheul-Ro

    2010-09-01

    Gallium nitride (GaN) nanorod (NR) arrays were grown on a gold-coated Si(111) substrate by metalorganic chemical vapor deposition (MOCVD). The synthesized single GaN NRs were characterized by field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray (EDX) spectroscopy, high-resolution transmission electron microscopy (HR-TEM), and cathodoluminescence (CL) analysis. The HR-TEM images and selected area electron diffraction (SAED) patterns demonstrated that the GaN NRs were of high quality with a single-crystal wurtzite structure and free from defects. The GaN NRs were observed to have a uniform diameter ranging from 40 to 70 nm, length of up to 1 µm, and a sharp symmetrical pyramid-like tip at the top. The pyramid-like tip was attributed to the dissociation of nitrogen atoms by the cracking of ammonia (NH3) at the elevated growth temperature. Furthermore, there was no sign of any metal or alloy cluster at the end of the NRs. Thus, the growth of the GaN NRs does not occur by the typical vapor-liquid-solid (VLS) mechanism.

  4. High field effects of GaN HEMTs.

    SciTech Connect

    Barker, Joy; Shul, Randy John

    2004-09-01

    This report represents the completion of a Laboratory-Directed Research and Development (LDRD) program to develop and fabricate geometric test structures for the measurement of transport properties in bulk GaN and AlGaN/GaN heterostructures. A large part of this study was spent examining fabrication issues related to the test structures used in these measurements, due to the fact that GaN processing is still in its infancy. One such issue had to do with surface passivation. Test samples without a surface passivation, often failed at electric fields below 50 kV/cm, due to surface breakdown. A silicon nitride passivation layer of approximately 200 nm was used to reduce the effects of surface states and premature surface breakdown. Another issue was finding quality contacts for the material, especially in the case of the AlGaN/GaN heterostructure samples. Poor contact performance in the heterostructures plagued the test structures with lower than expected velocities due to carrier injection from the contacts themselves. Using a titanium-rich ohmic contact reduced the contact resistance and stopped the carrier injection. The final test structures had an etch constriction with varying lengths and widths (8x2, 10x3, 12x3, 12x4, 15x5, and 16x4 {micro}m) and massive contacts. A pulsed voltage input and a four-point measurement in a 50 {Omega} environment was used to determine the current through and the voltage dropped across the constriction. From these measurements, the drift velocity as a function of the applied electric field was calculated and thus, the velocity-field characteristics in n-type bulk GaN and AlGaN/GaN test structures were determined. These measurements show an apparent saturation velocity near to 2.5x10{sup 7} cm/s at 180 kV/cm and 3.1x10{sup 7} cm/s, at a field of 140 kV/cm, for the bulk GaN and AlGaN heterostructure samples, respectively. These experimental drift velocities mark the highest velocities measured in these materials to date and confirm

  5. Ammothermal Growth of Gan Substrates For Leds: High-Pressure Ammonothermal Process for Bulk Gallium Nitride Crystal Growth for Energy Efficient Commercially Competitive Lighting

    SciTech Connect

    2011-01-01

    Broad Funding Opportunity Announcement Project: The new GaN crystal growth method is adapted from that used to grow quartz crystals, which are very inexpensive and represent the second-largest market for single crystals for electronic applications (after silicon). More extreme conditions are required to grow GaN crystals and therefore a new type of chemical growth chamber was invented that is suitable for large-scale manufacturing. A new process was developed that grows GaN crystals at a rate that is more than double that of current processes. The new technology will enable GaN substrates with best-in-world quality at lowest-in-world prices, which in turn will enable new generations of white LEDs, lasers for full-color displays, and high-performance power electronics.

  6. Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal—organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Liang; Yang, Lin-An; Xue, Jun-Shuai; Cao, Rong-Tao; Xu, Sheng-Rui; Zhang, Jin-Cheng; Hao, Yue

    2014-06-01

    We report on an improvement in the crystal quality of GaN film with an In0.17Al0.83N interlayer grown by pulsed metal—organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations (TDs) in GaN film with the InAlN interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy (TEM) measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InAlN interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InAlN interlayer. Atomic force microscopy measurement shows that the InAlN interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InAlN interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.

  7. High efficiency DC-DC converter using GaN transistors

    NASA Astrophysics Data System (ADS)

    Tómaş, Cosmin-Andrei; Grecu, Cristian; Pantazicǎ, Mihaela; Marghescu, Ion

    2015-02-01

    The paper presents a new high-efficiency power switching supply using the Gallium Nitride (GaN) technology. There are compared two solutions, the first using standard MOS transistors and the second using the new GaN transistor. The actual green technologies for obtaining the maximum energy and minimum losses have pushed the semiconductor industry into a continuous research regarding high power and high frequency devices, having uses in both digital communications and switching power supplies.

  8. Multi feed seed (MFS) high pressure crystallization of 1-2 in GaN

    NASA Astrophysics Data System (ADS)

    Bockowski, M.; Grzegory, I.; Lucznik, B.; Sochacki, T.; Nowak, G.; Sadovyi, B.; Strak, P.; Kamler, G.; Litwin-Staszewska, E.; Porowski, S.

    2012-07-01

    The growth and physical properties of GaN crystallized in a multi feed-seed (MFS) configuration by High Nitrogen Pressure Solution (HNPS) growth method are presented in detail. The conversion of free standing HVPE-GaN crystals to free standing HNPS-GaN is the basis of the MFS configuration. The influence of the experimental conditions (i.e. growth temperature, temperature gradient, etc.), the c-plane bowing of the initial substrate, the electrical properties of HNPS-GaN, and the rate and mode of growth from solution are analyzed. We show that the HNPS-GaN crystals have better structural quality than their HVPE-GaN seeds. The defect density decreases with increasing growth temperature, reaching 5×105 cm-2 for crystals grown at 1420 °C or higher. In contrast, the free carrier concentration in HNPS-GaN increases with increasing growth temperature, reaching 7×1019 cm-3 for samples crystallized at 1440 °C. Thus the possibility to obtain good quality plasmonic GaN substrates for laser diodes can be realized.

  9. Optical Emission of Individual GaN Nanocolumns Analyzed with High Spatial Resolution.

    PubMed

    Urban, A; Müller, M; Karbaum, C; Schmidt, G; Veit, P; Malindretos, J; Bertram, F; Christen, J; Rizzi, A

    2015-08-12

    Selective area growth has been applied to fabricate a homogeneous array of GaN nanocolumns (NC) with high crystal quality. The structural and optical properties of single NCs have been investigated at the nanometer-scale by transmission electron microscopy (TEM) and highly spatially resolved cathodoluminescence (CL) spectroscopy performed in a scanning transmission electron microscope (STEM) at liquid helium temperatures. TEM cross-section analysis reveals excellent structural properties of the GaN NCs. Sporadically, isolated basal plane stacking faults (BSF) can be found resulting in a remarkably low BSF density in the almost entire NC ensemble. Both, defect-free NCs and NCs with few BSFs have been investigated. The low defect density within the NCs allows the characterization of individual BSFs, which is of high interest for studying their optical properties. Direct nanometer-scale correlation of the CL and STEM data clearly exhibits a spatial correlation of the emission at 360.6 nm (3.438 eV) with the location of basal plane stacking faults of type I1. PMID:26225541

  10. Piezotronic Effect in Polarity-Controlled GaN Nanowires.

    PubMed

    Zhao, Zhenfu; Pu, Xiong; Han, Changbao; Du, Chunhua; Li, Linxuan; Jiang, Chunyan; Hu, Weiguo; Wang, Zhong Lin

    2015-08-25

    Using high-quality and polarity-controlled GaN nanowires (NWs), we studied the piezotronic effect in crystal orientation defined wurtzite structures. By applying a normal compressive force on c-plane GaN NWs with an atomic force microscopy tip, the Schottky barrier between the Pt tip and GaN can be effectively tuned by the piezotronic effect. In contrast, the normal compressive force cannot change the electron transport characteristics in m-plane GaN NWs whose piezoelectric polarization axis is turned in the transverse direction. This observation provided solid evidence for clarifying the difference between the piezotronic effect and the piezoresistive effect. We further demonstrated a high sensitivity of the m-plane GaN piezotronic transistor to collect the transverse force. The integration of c-plane GaN and m-plane GaN indicates an overall response to an external force in any direction. PMID:26256533

  11. Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure

    NASA Astrophysics Data System (ADS)

    Sadovyi, B.; Nikolenko, A.; Weyher, J. L.; Grzegory, I.; Dziecielewski, I.; Sarzynski, M.; Strelchuk, V.; Tsykaniuk, B.; Belyaev, O.; Petrusha, I.; Turkevich, V.; Kapustianyk, V.; Albrecht, M.; Porowski, S.

    2016-09-01

    Experimental studies of diffusion of oxygen in bulk wurtzite-type GaN crystals grown by Halide Vapor Phase Epitaxy (HVPE) are reported. Oxygen concentration profiles were studied in as-grown GaN crystals and also after annealing of crystals at temperatures up to 3400 K and pressures up to 9 GPa. Investigated crystals contained large conical defects i.e. pinholes of significantly higher oxygen concentration (NO=(2-4)×1019 cm-3) than that in the bulk matrix (NO<1×1017 cm-3). The pinholes were revealed by a photo-etching method in as-grown and annealed GaN samples. Confocal micro-Raman spectroscopy was applied to measure the profiles of free electron concentration, which directly corresponds to the concentration of oxygen impurity. Lateral scanning across the interfaces between pinholes and matrix in the as-grown HVPE GaN crystals showed sharp step-like carrier concentration profiles. Annealing at high temperature and high pressure resulted in the diffusion blurring of the profiles. Analysis of obtained data allowed for the first time for estimation of oxygen diffusion coefficients DO(T, P). The obtained values of DO(T, P) are anomalously small similarly to the values obtained by Harafuji et al. by molecular dynamic calculations for self-diffusion of nitrogen. Whereas oxygen and nitrogen are on the same sublattice it could explain the similarity of their diffusion coefficients.

  12. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    SciTech Connect

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep; Bader, Samuel

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  13. High-resolution emission spectroscopy of random lasing in GaN films pumped by UV-pulsed laser

    NASA Astrophysics Data System (ADS)

    Cachoncinlle, C.; Millon, E.; Petit, A.

    2016-06-01

    We report on room temperature photoluminescence on GaN films grown by metal organic chemical vapor deposition (MOCVD). A NdYAG pulsed-laser at 266 nm illuminates the films. Two components, at 363 nm and 370 nm, are identified in the near band edge structure on the spectra. A laser threshold of 700±150 kW cm-2 is evidenced and corresponds to random lasing in the GaN film. A drastic narrowing of the spectral bandwidth from 5.2 to 1.8 nm is observed at 370 nm. High-resolution spectroscopy measurements show laser mode widths thinner than 50 pm leading to a high quality factor Q=7750. Low-resolution measurements show redshift from 370.0 to 373.1 nm for one component and from 363.1 nm to 363.9 nm for the other. Interpretation of this redshift is discussed.

  14. Dopant distribution in high fluence Fe implanted GaN

    SciTech Connect

    Azarov, A. Yu.; Jensen, J.; Hallen, A.; Aggerstam, T.

    2008-09-01

    Undoped wurtzite GaN epilayers implanted at room temperature with 50-325 keV Fe{sup +} ions in the fluence range of 10{sup 15}-10{sup 17} ions/cm{sup 2} are studied by a combination of Rutherford backscattering/channeling spectrometry and time-of-flight elastic recoil detection analysis. The results show an enhanced Fe concentration close to the surface for high ion fluences (>1x10{sup 16} cm{sup -2}), which increases with the ion fluence. Annealing at 800 deg. C for 30 min has a negligible effect on the Fe distribution in the material bulk, but further increases the Fe concentration near the surface. Our findings can be understood by radiation enhanced diffusion during ion implantation and an increased Fe diffusivity in the near surface region with distorted stoichiometry, or formation of secondary phases and precipitates for the highest doses. The simulation shows that, if enhanced diffusion is the reason for Fe buildup at the surface, both radiation enhanced diffusion and the thermal diffusion of Fe atoms near the surface, need to be at least five times larger than ordinary bulk diffusion to explain the increased Fe surface concentration.

  15. Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth

    SciTech Connect

    Baca, Albert G.; Bartram, M.E.; Coltrin, M.E.; Crawford, M.H.; Han, J.; Missert, N.; Willan, C.C.

    1999-01-11

    Growth kinetics, mechanisms, and material quality in GaN epitaxial lateral over-growth (ELO) were examined using a single mask of systematically varied patterns. A 2-D gas phase reaction/diffusion model describes how transport of the Ga precursor to the growth surface enhances the lateral rate in the early stages of growth. In agreement with SEM studies of truncated growth runs, the model also predicts the dramatic decrease in the lateral rate that occurs as GaN over-growth reduces the exposed area of the mask. At the point of convergence, a step-flow coalescence mechanism is observed to fill in the area between lateral growth-fronts. This alternative growth mode in which a secondary growth of GaN is nucleated along a single convergence line, may be responsible for producing smooth films observed to have uniform cathodoluminescence (CL) when using 1{micro}m nucleation zones. Although emission is comprised of both UV ({approximately}365nm) and yellow ({approximately}550nm) components, the spectra suggest these films have reduced concentrations of threading dislocations normally associated with non-radiative recombination centers and defects known to accompany growth-front convergence lines.

  16. Effect of defects in oxide templates on Non-catalytic growth of GaN nanowires for high-efficiency light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Hwang, Sung Won; Choi, Suk-Ho

    2016-04-01

    Two kinds of oxide templates, one with and one without undercuts, are employed to study the effect of defects in oxide templates on non-catalytic growth of GaN nanowires (NWs). GaN NWs abnormally grown from the templates containing undercuts exhibit two types of patterns: earlystage growth of premature NWs and abnormally-overgrown (~2 μm) NWs. GaN NWs grown on perfectly-symmetric template patterns are highly crystalline and have high aspect ratios (2 ~ 5), and their tops are shaped as pyramids with semipolar facets, clearly indicating hexagonal symmetry. The internal quantum efficiency of the well-grown NWs is 10% larger than that of the deformed NWs, as estimated by using photoluminescence. These results suggest that our technique is an effective approach for growing large-area-patterned, vertically-aligned, hexagonal GaN NWs without catalysts, in strong contrast to catalytic vapor-liquid-solid growth, and that good formation of the oxide templates is crucial for the growth of high-quality GaN NWs.

  17. GaN High-Electron-Mobility Transistor with WN x /Cu Gate for High-Power Applications

    NASA Astrophysics Data System (ADS)

    Hsieh, Ting-En; Lin, Yueh-Chin; Li, Fang-Ming; Shi, Wang-Cheng; Huang, Yu-Xiang; Lan, Wei-Cheng; Chin, Ping-Chieh; Chang, Edward Yi

    2015-12-01

    A GaN high-electron-mobility transistor (HEMT) with WN x /Cu gate for high-power applications has been investigated. The direct-current (DC) characteristics of the device are comparable to those of conventional Ni/Au-gated GaN HEMTs. The results of high-voltage stress testing indicate that the device is stable after application of 200 V stress for 42 h. The WN x /Cu-gated GaN HEMT exhibited no obvious changes in the DC characteristics or Schottky barrier height before and after annealing at 250°C for 1 h. These results demonstrate that the WN x /Cu gate structure can be used in a GaN HEMT for high-power applications with good thermal stability.

  18. A high efficiency C-band internally-matched harmonic tuning GaN power amplifier

    NASA Astrophysics Data System (ADS)

    Lu, Y.; Zhao, B. C.; Zheng, J. X.; Zhang, H. S.; Zheng, X. F.; Ma, X. H.; Hao, Y.; Ma, P. J.

    2016-09-01

    In this paper, a high efficiency C-band gallium nitride (GaN) internally-matched power amplifier (PA) is presented. This amplifier consists of 2-chips of self-developed GaN high-electron mobility transistors (HEMTs) with 16 mm total gate width on SiC substrate. New harmonic manipulation circuits are induced both in the input and output matching networks for high efficiency matching at fundamental and 2nd-harmonic frequency, respectively. The developed amplifier has achieved 72.1% power added efficiency (PAE) with 107.4 W output power at 5 GHz. To the best of our knowledge, this amplifier exhibits the highest PAE in C-band GaN HEMT amplifiers with over 100 W output power. Additionally, 1000 hours' aging test reveals high reliability for practical applications.

  19. High voltage and high current density vertical GaN power diodes

    SciTech Connect

    Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; Moseley, M. W.; Crawford, M. H.; King, M. P.; Allerman, A. A.; Kaplar, R. J.; van Heukelom, M. S.; Wierer, J. J.

    2016-01-01

    We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

  20. High voltage and high current density vertical GaN power diodes

    DOE PAGESBeta

    Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; Moseley, M. W.; Crawford, M. H.; King, M. P.; Allerman, A. A.; Kaplar, R. J.; van Heukelom, M. S.; Wierer, J. J.

    2016-01-01

    We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

  1. Electron Transport in a High Mobility Free-Standing GaN Substrate Grown by Hydride Vapor Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Farina, L.; Kurdak, C.; Yun, F.; Morkoc, H.; Rode, D. L.; Tsen, K. T.; Park, S. S.; Lee, K. Y.

    2001-03-01

    We studied electron transport properties in a high quality free-standing GaN grown by hydride vapor phase epitaxy. The GaN, with a thickness of more than 200 μm, was lifted off the sapphire substrate and mechanically polished. At room temperature the carrier density is 1.3x10^16cm-3 and the Hall mobility is 1200 cm^2/V-s, which is the highest reported electron mobility for GaN with a wurtzite structure. Transport properties are studied using a van der Pauw geometry in a temperature range of 20 to 300 K and in magnetic fields up to 8 Tesla. Electron mobility is found to increase at lower temperatures with a peak mobility of 7400 cm^2/V-s at 48 K. The carrier density decreases exponentially at temperatures below 80 K with an activation energy of 28 meV. The electron transport measurements were used to examine the contributions of different scattering mechanisms. Numerical solution of the Boltzmann transport equation was carried out, including non-parabolic conduction bands and wavefunction admixture, along with lattice scattering and ionized-impurity scattering. LO and TO phonon energies were determined by Raman spectroscopy.

  2. Ge doped GaN with controllable high carrier concentration for plasmonic applications

    SciTech Connect

    Kirste, Ronny; Hoffmann, Marc P.; Sachet, Edward; Bobea, Milena; Bryan, Zachary; Bryan, Isaac; Maria, Jon-Paul; Collazo, Ramón; Sitar, Zlatko; Nenstiel, Christian; Hoffmann, Axel

    2013-12-09

    Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4 × 10{sup 20} cm{sup −3}. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500 cm{sup −1} and a surface plasma with an energy around 2000 cm{sup −1}. These findings open possibilities for the application of highly doped GaN for plasmonic devices.

  3. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

    SciTech Connect

    Koblmueller, G.; Chu, R. M.; Raman, A.; Mishra, U. K.; Speck, J. S.

    2010-02-15

    We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr{sub 4} to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm{sup 2}/V s and the dc drain current reached {approx}1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.

  4. Prostate specific antigen detection using AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Kang, B. S.; Wang, H. T.; Lele, T. P.; Tseng, Y.; Ren, F.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

    2007-09-01

    Antibody-functionalized Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect prostate specific antigen (PSA). The PSA antibody was anchored to the gate area through the formation of carboxylate succinimdyl ester bonds with immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when target PSA in a buffer at clinical concentrations was added to the antibody-immobilized surface. The authors could detect a wide range of concentrations from 10pg/mlto1μg/ml. The lowest detectable concentration was two orders of magnitude lower than the cutoff value of PSA measurements for clinical detection of prostate cancer. These results clearly demonstrate the promise of portable electronic biological sensors based on AlGaN /GaN HEMTs for PSA screening.

  5. Prospect of GaN light-emitting diodes grown on glass substrates

    NASA Astrophysics Data System (ADS)

    Choi, Jun-Hee; Lee, Yun Sung; Baik, Chan Wook; Ahn, Ho Young; Cho, Kyung Sang; Kim, Sun Il; Hwang, Sungwoo

    2013-03-01

    We report the enhanced electroluminescence (EL) of GaN light-emitting diodes (LEDs) on glass substrates. We found that GaN morphology affected the EL and achieved enhanced EL of GaN-LEDs on glass by identifying the optimal GaN morphology having both high crystallinity and compatibility for device fabrication. At proper growth temperature, GaN crystallinity was improved with increasing GaN crystal size irrespective of the GaN crystallographic orientation, as determined by spatially resolved cathodoluminescent spectroscopy. The optimized GaN LEDs on glass composed of the nearly single-crystalline GaN pyramid arrays exhibited excellent microscopic EL uniformity and luminance values of ~ 9100 cd/m2 at the peak wavelength of 495 nm. The EL color could be adjusted mainly by varying the quantum well temperature. In addition, new growth methods for achieving high GaN crystallinity at a low growth temperature (e.g. ~700°C) were briefly reviewed and attempted by adopting selective heating. We expect that performance of the GaN LEDs on glass can be much enhanced by enhancing GaN crystallinity and p-GaN coating, and evolvement of low-temperature growth of high-quality GaN might even customize ordinary glass as a substrate, which enables high-performance, low-cost lighting or display.

  6. Ultra High p-doping Material Research for GaN Based Light Emitters

    SciTech Connect

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing

  7. Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers

    NASA Astrophysics Data System (ADS)

    Chen, Shuo-Wei; Yang, Young; Wen, Wei-Chih; Li, Heng; Lu, Tien-Chang

    2016-03-01

    Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).

  8. Hydride vapor phase epitaxy of high quality {101¯3¯} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres

    NASA Astrophysics Data System (ADS)

    Yang, Jiankun; Wei, Tongbo; Huo, Ziqiang; Hu, Qiang; Zhang, Yonghui; Duan, Ruifei; Wang, Junxi

    2014-02-01

    Semipolar {101¯3¯} GaN layers were grown on self-assembled SiO2 nanospheres sapphire (SSNS) by hydride vapor phase epitaxy. The RMS roughness was 1.1 nm for the scan of 20×20 µm2 and the striated surface morphology almost disappeared. The full widths at half maximum of on-axis X-ray rocking curves were 324 arcsec rocking toward the [303¯2¯] direction and 413 arcsec rocking toward the [12¯10] direction, respectively. Compared to the GaN layer grown on the planar sapphire, the reduction of the defect density of semi-GaN grown on SSNS, such as basal stacking faults, partial dislocations and perfect dislocations, was demonstrated by both X-ray rocking curves and low-temperature photoluminescence. In addition, the Raman analyses also showed the partial relaxation of the stress using SSNS.

  9. Ion implantation doping and high temperature annealing of GaN

    SciTech Connect

    Zolper, J.C.; Crawford, M.H.; Howard, A.J. |

    1995-12-31

    The III-V nitride-containing semiconductors InN, GaN, and AIN and their ternary alloys are the focus of extensive research for application to visible light emitters and as the basis for high temperature electronics. Recent advances in ion implantation doping of GaN and studies of the effect of rapid thermal annealing up to 1100{degrees}C are making new device structures possible. Both p- and n-type implantation doping of GaN has been achieved using Mg co-implanted with P for p-type and Si-implantation for n-type. Electrical activation was achieved by rapid thermal anneals in excess of 1000{degrees}C. Atomic force microscopy studies of the surface of GaN after a series of anneals from 750 to 1100{degrees}C shows that the surface morphology gets smoother following anneals in Ar or N{sub 2}. The photoluminescence of the annealed samples also shows enhanced bandedge emission for both annealing ambients. For the deep level emission near 2.2 eV, the sample annealed in N{sub 2} shows slightly reduced emission while the sample annealed in Ar shows increased emission. These annealing results suggest a combination of defect interactions occur during the high temperature processing.

  10. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

    SciTech Connect

    Bajaj, Sanyam Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang; Reza, Shahed; Chumbes, Eduardo M.; Khurgin, Jacob; Rajan, Siddharth

    2015-10-12

    We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10{sup 7 }cm/s at a low sheet charge density of 7.8 × 10{sup 11 }cm{sup −2}. An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.

  11. Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

    SciTech Connect

    Chen, Jr-Tai Hsu, Chih-Wei; Forsberg, Urban; Janzén, Erik

    2015-02-28

    Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

  12. Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

    NASA Astrophysics Data System (ADS)

    Chen-Tai, Jr.; Hsu, Chih-Wei; Forsberg, Urban; Janzén, Erik

    2015-02-01

    Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H2 atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ˜2000 cm2/V.s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ˜1 × 1020 cm-3 at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm2 SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

  13. Fabrication of high reflectivity nanoporous distributed Bragg reflectors by controlled electrochemical etching of GaN

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Min; Kang, Jin-Ho; Lee, June Key; Ryu, Sang-Wan

    2016-07-01

    The nanoporous medium is a valuable feature of optical devices because of its variable optical refractive index with porosity. One important application is in a GaN-based vertical cavity surface emitting laser having a distributed Bragg reflector (DBR) composed of alternating nanoporous and bulk GaNs. However, optimization of the fabrication process for high reflectivity DBRs having wellcontrolled high reflection bands has not been studied yet. We used electrochemical etching to study the fabrication process of a nanoporous GaN DBR and analyzed the relationship between the morphology and optical reflectivity. Several electrolytes were examined for the formation of the optimized nanoporous structure. A highly reflective DBRs having reflectivity of ~100% were obtained over a wide wavelength range of 450-750 nm. Porosification of semiconductors into nanoporous layers could provide a high reflectivity DBR due to controlled index-contrast, which would be advantages for the construction of a high-Q optical cavity.

  14. GaN transistors on Si for switching and high-frequency applications

    NASA Astrophysics Data System (ADS)

    Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

    2014-10-01

    In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

  15. Design and optimization of dielectric optical coatings for GaN based high bright LEDs

    NASA Astrophysics Data System (ADS)

    Wang, Xiaodong; Li, Yan; Yang, Hua; Yi, Xiaoyan; Wang, Liangchen; Wang, Guohong; Yang, Fuhua; Li, Jinmin

    2008-03-01

    Different types of dielectric optical coatings for GaN based high bright LEDs were designed and discussed. The optical coatings included the anti-reflection (AR) coating, high-reflection (HR) coating, and omni-directional high reflection coating. Main materials for the optical coatings were dielectric materials such as SiO II, Ta IIO 5 and Al IIO 3, which were different from the metallic reflector such as Ag usually used now. For the application of anti-reflection coating in GaN LEDs, it was introduced into the design of transparent electrodes with transparent materials such as ITO to form combined transparent electrodes. With the design of P, N transparent electrodes using the AR coating and ITO for GaN LEDs, the extraction efficiency was improved by about 15% experimentally. For the dielectric high-reflection coating, it has higher reflectivity and lower absorption than the metal reflector, and it was supposed to improve the extraction efficiency obviously. While the dielectric omni-directional reflection coating using dielectric materials was also designed and discussed in this article, since which was anticipated to improve the extraction efficiency furthermore. Using SiO II and Ta IIO 5, the average reflectivity of a design of all dielectric omni-directional high reflection coating on the sapphire surface was over 94%.

  16. Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates

    NASA Astrophysics Data System (ADS)

    Nikishin, S. A.; Temkin, H.; Antipov, V. G.; Guriev, A. I.; Zubrilov, A. S.; Elyukhin, V. A.; Faleev, N. N.; Kyutt, R. N.; Chin, A. K.

    1998-05-01

    Growth of high quality wurtzite-structure GaN layers on (111) MgAl2O4 by gas source molecular beam epitaxy is described. Hydrazine was used as a source of active nitrogen. In situ reflection high energy electron diffraction was used to monitor the growth mode. Two-dimensional growth was obtained at temperatures above 750 °C on multi-step GaN buffer layers. The resulting GaN films show excellent luminescence properties.

  17. Spectroscopic study of semipolar (112{sup ¯}2)-HVPE GaN exhibiting high oxygen incorporation

    SciTech Connect

    Schustek, Philipp; Hocker, Matthias; Thonke, Klaus; Klein, Martin; Scholz, Ferdinand; Simon, Ulrich

    2014-10-28

    Spatially resolved luminescence and Raman spectroscopy investigations are applied to a series of (112{sup ¯}2)-GaN samples grown by hydride vapor phase epitaxy (HVPE) grown over an initial layer deposited by metal organic vapor phase epitaxy on patterned sapphire substrates. Whereas these two differently grown GaN layers are crystallographically homogeneous, they differ largely in their doping level due to high unintentional oxygen uptake in the HVPE layer. This high doping shows up in luminescence spectra, which can be explained by a free-electron recombination band for which an analytical model considering the Burstein-Moss shift, conduction band tailing, and the bandgap renormalization is included. Secondary ion mass spectrometry, Raman spectroscopy, and Hall measurements concordantly determine the electron density to be above 10{sup 19 }cm{sup −3}. In addition, the strain state is assessed by Raman spectroscopy and compared to a finite element analysis.

  18. Radar Waveform Pulse Analysis Measurement System for High-Power GaN Amplifiers

    NASA Technical Reports Server (NTRS)

    Thrivikraman, Tushar; Perkovic-Martin, Dragana; Jenabi, Masud; Hoffman, James

    2012-01-01

    This work presents a measurement system to characterize the pulsed response of high-power GaN amplifiers for use in space-based SAR platforms that require very strict amplitude and phase stability. The measurement system is able to record and analyze data on three different time scales: fast, slow, and long, which allows for greater detail of the mechanisms that impact amplitude and phase stability. The system is fully automated through MATLAB, which offers both instrument control capability and in-situ data processing. To validate this system, a high-power GaN HEMT amplifier operated in saturation was characterized. The fast time results show that variations to the amplitude and phase are correlated to DC supply transients, while long time characteristics are correlated to temperature changes.

  19. Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

    NASA Astrophysics Data System (ADS)

    Chowdhury, Subhra; Chattaraj, Swarnabha; Biswas, Dhrubes

    2015-04-01

    For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current-voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure.

  20. High detectivity GaN metal semiconductor metal UV photodetectors with transparent tungsten electrodes

    NASA Astrophysics Data System (ADS)

    Wang, C. K.; Chang, S. J.; Su, Y. K.; Chiou, Y. Z.; Chang, C. S.; Lin, T. K.; Liu, H. L.; Tang, J. J.

    2005-06-01

    GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with transparent tungsten (W) electrodes were fabricated and characterized. It was found that the 10 nm thick W film deposited with a 250 W RF power could provide a reasonably high transmittance of 68.3% at 360 nm, a low resistivity of 1.5 × 10-3 Ω cm and an effective Schottky barrier height of 0.777 eV on u-GaN. We also achieved a peak responsivity of 0.15 A W-1 and a quantum efficiency of 51.8% at 360 nm from the GaN MSM UV photodetector with W electrodes. With a 2 V applied bias, it was found that the minimum noise equivalent power (NEP) and the maximum D* of our detector were 1.745 × 10-10 W and 7.245 × 109 cm Hz0.5 W-1, respectively.

  1. In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction

    SciTech Connect

    Fernandez-Garrido, S.; Calleja, E.; Koblmueller, G.; Speck, J. S.

    2008-08-01

    Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf plasma-assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption using in situ quadrupole mass spectrometry, which showed Arrhenius behavior with an apparent activation energy of 3.1 eV. Clear signatures of intensity oscillations during reflection high-energy electron diffraction measurements facilitated complementary evaluation of the decomposition rate and highlighted a layer-by-layer decomposition mode in vacuum. Exposure to active nitrogen, either under vacuum or during growth under N-rich growth conditions, strongly reduced the GaN losses due to GaN decomposition.

  2. Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

    NASA Technical Reports Server (NTRS)

    Freeman, Jon C.

    2003-01-01

    Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

  3. The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate

    NASA Astrophysics Data System (ADS)

    Shang, Lin; Zhai, Guangmei; Mei, Fuhong; Jia, Wei; Yu, Chunyan; Liu, Xuguang; Xu, Bingshe

    2016-05-01

    The role of nucleation layer thickness on the GaN crystal quality grown on cone-patterned sapphire substrate (PSS) was explored. The morphologies of epitaxial GaN at different growth stages were investigated by a series of growth interruption in detail. After 10- and 15-min three-dimensional growth, the nucleation sites are very important for the bulk GaN crystal quality. They have a close relationship with the nucleation layer thickness, as confirmed through the scanning electron microscope (SEM) analysis. Nucleation sites formed mainly on patterns are bad for bulk GaN crystal quality and nucleation sites formed mainly in the trenches of PSS mounds are good for bulk GaN crystal quality, as proved by X-ray diffraction analysis. Nucleation layer thickness can effectively control the nucleation sites and thus determine the crystal quality of bulk GaN.

  4. P-type doping of GaN

    SciTech Connect

    Wong, R.K.

    2000-04-10

    After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

  5. Graphene quilts for thermal management of high-power GaN transistors.

    PubMed

    Yan, Zhong; Liu, Guanxiong; Khan, Javed M; Balandin, Alexander A

    2012-01-01

    Self-heating is a severe problem for high-power gallium nitride (GaN) electronic and optoelectronic devices. Various thermal management solutions, for example, flip-chip bonding or composite substrates, have been attempted. However, temperature rise due to dissipated heat still limits applications of the nitride-based technology. Here we show that thermal management of GaN transistors can be substantially improved via introduction of alternative heat-escaping channels implemented with few-layer graphene-an excellent heat conductor. The graphene-graphite quilts were formed on top of AlGaN/GaN transistors on SiC substrates. Using micro-Raman spectroscopy for in situ monitoring we demonstrated that temperature of the hotspots can be lowered by ∼20 °C in transistors operating at ∼13 W mm(-1), which corresponds to an order-of-magnitude increase in the device lifetime. The simulations indicate that graphene quilts perform even better in GaN devices on sapphire substrates. The proposed local heat spreading with materials that preserve their thermal properties at nanometre scale represents a transformative change in thermal management. PMID:22569371

  6. Effect of nitridation surface treatment on silicon (1 1 1) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD

    NASA Astrophysics Data System (ADS)

    Rahman, Mohd Nazri Abd.; Yusuf, Yusnizam; Mansor, Mazwan; Shuhaimi, Ahmad

    2016-01-01

    A single-crystalline with high quality of gallium nitride epilayers was grown on silicon (1 1 1) substrate by metal organic chemical vapor deposition. The process of nitridation surface treatment was accomplished on silicon (1 1 1) substrate by flowing the ammonia gaseous. Then, it was followed by a thin aluminum nitride nucleation layer, aluminum nitride/gallium nitride multi-layer and a thick gallium nitride epilayer. The influence of in situ nitridation surface treatment on the crystallinity quality of gallium nitride epilayers was studied by varying the nitridation times at 40, 220 and 400 s, respectively. It was shown that the nitridation times greatly affect the structural properties of the grown top gallium nitride epilayer on silicon (1 1 1) substrate. In the (0 0 0 2) and (1 0 1 bar 2) X-ray rocking curve analysis, a narrower value of full width at half-maximum has been obtained as the nitridation time increased. This is signifying the reduction of dislocation density in the gallium nitride epilayer. This result was supported by the value of bowing and root mean square roughness measured by surface profilometer and atomic force microscopy. Furthermore, a crack-free gallium nitride surface with an abrupt cross-sectional structure that observed using field effect scanning electron microscopy was also been obtained. The phi-scan curve of asymmetric gallium nitride proved the top gallium nitride epilayer exhibited a single-crystalline structure.

  7. AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

    NASA Astrophysics Data System (ADS)

    Bergsten, Johan; Li, Xun; Nilsson, Daniel; Danielsson, Örjan; Pedersen, Henrik; Janzén, Erik; Forsberg, Urban; Rorsman, Niklas

    2016-05-01

    AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using an alternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuning the growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growth conditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation and dispersion. Good isolation with OFF-state currents of 2 × 10-6 A/mm, breakdown fields of 70 V/µm, and low drain induced barrier lowering of 0.13 mV/V are found. Dispersive effects are examined using pulsed current-voltage measurements. Current collapse and knee walkout effects limit the maximum output power to 1.3 W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer a versatile approach to decrease dispersive effects in GaN HEMTs.

  8. 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication.

    PubMed

    Lee, Changmin; Zhang, Chong; Cantore, Michael; Farrell, Robert M; Oh, Sang Ho; Margalith, Tal; Speck, James S; Nakamura, Shuji; Bowers, John E; DenBaars, Steven P

    2015-06-15

    We demonstrate high-speed data transmission with a commercial high power GaN laser diode at 450 nm. 2.6 GHz bandwidth was achieved at an injection current of 500 mA using a high-speed visible light communication setup. Record high 4 Gbps free-space data transmission rate was achieved at room temperature. PMID:26193595

  9. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect

    Hodges, C. Pomeroy, J.; Kuball, M.

    2014-02-14

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  10. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

    SciTech Connect

    Pastor, D.; Cusco, R.; Artus, L.; Gonzalez-Diaz, G.; Iborra, E.; Jimenez, J.; Peiro, F.; Calleja, E.

    2006-08-15

    We have studied the effects of rapid thermal annealing at 1300 deg.C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si{sub 3}N{sub 4} crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3 nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.

  11. High-field electron transport in GaN under crossed electric and magnetic fields

    NASA Astrophysics Data System (ADS)

    Kochelap, V. A.; Korotyeyev, V. V.; Syngayivska, G. I.; Varani, L.

    2015-10-01

    High-field electron transport studied in crossed electric and magnetic fields in bulk GaN with doping of 1016 cm-3, compensation around 90% at the low lattice temperature (30 K). It was found the range of the magnetic and electric fields where the non-equilibrium electron distribution function has a complicated topological structure in the momentum space with a tendency to the formation of the inversion population. Field dependences of dissipative and Hall components of the drift velocity were calculated for the samples with short- and open- circuited Hall contacts in wide ranges of applied electric (0 — 20 kV/cm) and magnetic (1 — 10 T) fields. For former sample, field dependences of dissipative and Hall components of the drift velocity have a non-monotonic behavior. The dissipative component has the inflection point which corresponds to the maximum point of the Hall component. For latter sample, the drift velocity demonstrate a usual sub-linear growth without any critical points. We found that GaN samples with controlled resistance of the Hall circuit can be utilized as a electronic high-power switch.

  12. Structural Phase Transitions in High-Pressure Wurtzite to Rocksalt Phase in GaN and SiC

    SciTech Connect

    Xiao, H. Y.; Gao, Fei; Wang, Lumin M.; Zu, Xiaotao T.; Zhang, Yanwen; Weber, William J.

    2008-06-16

    Ab initio molecular dynamics simulations are employed to study the atomistic mechanisms and pathways of high-pressure phase transformation in GaN and SiC. Our simulations bring a fundamental level of understanding of the wurtzite to rocksalt phase transformation that undergoes inhomogeneous displacements via a tetragonal atomic configuration, and suggest that the transition path may be independent of the presence of d electrons on the cation in GaN. The discrepancies between experimental and theoretical studies of transition paths are discussed.

  13. Ab initio molecular dynamics simulation of structural transformation in zinc blende GaN under high pressure

    SciTech Connect

    Xiao, Hai Yan; Gao, Fei; Zu, Xiaotao T.; Weber, William J.

    2010-02-04

    High-pressure induced zinc blende to rocksalt phase transition in GaN has been investigated by ab initio molecular dynamics method to characterize the transformation mechanism at the atomic level. It was shown that at 100 GPa GaN passes through tetragonal and monoclinic states before rocksalt structure is formed. The transformation mechanism is consistent with that for other zinc blende semiconductors obtained from the same method. Detailed structural analysis showed that there is no bond breaking involved in the phase transition.

  14. GaN high electron mobility transistors for sub-millimeter wave applications

    NASA Astrophysics Data System (ADS)

    Seup Lee, Dong; Liu, Zhihong; Palacios, Tomás

    2014-10-01

    This paper reviews different technologies recently developed to push the performance of GaN-based high electron mobility transistors (HEMTs) into sub-mm wave frequencies. To understand the impact and need of each technology, a device delay model based on small-signal equivalent circuit parameters is introduced, which divides the total device delay into intrinsic, extrinsic, and parasitic components. Then, several technologies to improve the speed of GaN HEMTs are discussed according to their contribution on each delay component. Finally, the key limiting factors for the high speed operation of these transistors under high drain or gate bias range are studied and novel approaches to solve these problems are presented.

  15. GaN grown on nano-patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Jing, Kong; Meixin, Feng; Jin, Cai; Hui, Wang; Huaibing, Wang; Hui, Yang

    2015-04-01

    High-quality gallium nitride (GaN) film was grown on nano-patterned sapphire substrates (NPSS) and investigated using XRD and SEM. It was found that the optimum thickness of the GaN buffer layer on the NPSS is 15 nm, which is thinner than that on micro-patterned sapphire substrates (MPSS). An interesting phenomenon was observed for GaN film grown on NPSS:GaN mainly grows on the trench regions and little grows on the sidewalls of the patterns at the initial growth stage, which is dramatically different from GaN grown on MPSS. In addition, the electrical and optical properties of LEDs grown on NPSS were characterized. Project supported by the Suzhou Nanojoin Photonics Co., Ltd and the High-Tech Achievements Transformation of Jiangsu Province, China (No.BA2012010).

  16. Epitaxy of GaN Nanowires on Graphene.

    PubMed

    Kumaresan, Vishnuvarthan; Largeau, Ludovic; Madouri, Ali; Glas, Frank; Zhang, Hezhi; Oehler, Fabrice; Cavanna, Antonella; Babichev, Andrey; Travers, Laurent; Gogneau, Noelle; Tchernycheva, Maria; Harmand, Jean-Christophe

    2016-08-10

    Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to silica on which the graphene flakes, grown by chemical vapor deposition, are transferred. The nanowires grow vertically along their c-axis and we observe a unique epitaxial relationship with the ⟨21̅1̅0⟩ directions of the wurtzite GaN lattice parallel to the directions of the carbon zigzag chains. Remarkably, the nanowire density and height decrease with increasing number of graphene layers underneath. We attribute this effect to strain and we propose a model for the nanowire density variation. The GaN nanowires are defect-free and they present good optical properties. This demonstrates that graphene layers transferred on amorphous carrier substrates is a promising alternative to bulk crystalline substrates for the epitaxial growth of high quality GaN nanostructures. PMID:27414518

  17. A Compact Two-Stage 120 W GaN High Power Amplifier for SweepSAR Radar Systems

    NASA Technical Reports Server (NTRS)

    Thrivikraman, Tushar; Horst, Stephen; Price, Douglas; Hoffman, James; Veilleux, Louise

    2014-01-01

    This work presents the design and measured results of a fully integrated switched power two-stage GaN HEMT high-power amplifier (HPA) achieving 60% power-added efficiency at over 120Woutput power. This high-efficiency GaN HEMT HPA is an enabling technology for L-band SweepSAR interferometric instruments that enable frequent repeat intervals and high-resolution imagery. The L-band HPA was designed using space-qualified state-of-the-art GaN HEMT technology. The amplifier exhibits over 34 dB of power gain at 51 dBm of output power across an 80 MHz bandwidth. The HPA is divided into two stages, an 8 W driver stage and 120 W output stage. The amplifier is designed for pulsed operation, with a high-speed DC drain switch operating at the pulsed-repetition interval and settles within 200 ns. In addition to the electrical design, a thermally optimized package was designed, that allows for direct thermal radiation to maintain low-junction temperatures for the GaN parts maximizing long-term reliability. Lastly, real radar waveforms are characterized and analysis of amplitude and phase stability over temperature demonstrate ultra-stable operation over temperature using integrated bias compensation circuitry allowing less than 0.2 dB amplitude variation and 2 deg phase variation over a 70 C range.

  18. Preparation and characterization of one-dimensional GaN nanorods with Tb intermediate layer

    SciTech Connect

    Shi, Feng; Xue, Chengshan

    2012-12-15

    Graphical abstract: Display Omitted Highlights: ► GaN nanorods have been prepared on Si substrates by magnetron sputtering. ► GaN nanorods are single crystal with hexagonal wurtzite structure. ► GaN nanorods are high-quality crystalline after ammoniating at 950 °C for 15 min. ► Ammoniating temperatures and times affect the growth of GaN nanorods significantly. -- Abstract: GaN nanorods have been successfully prepared on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga{sub 2}O{sub 3}/Tb thin films. X-ray diffraction (XRD), X-ray photoelectron spectroscope (XPS), FT-IR spectrophotometer, scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), and photoluminescence (PL) spectroscopy were used to characterize the microstructures, morphologies compositions and optical properties of the GaN samples. The results demonstrate that the nanorods are single crystal GaN with hexagonal wurtzite structure and high-quality crystalline after ammoniating at 950 °C for 15 min, which have the size of 100–150 nm in diameter. Ammoniating temperatures and times affect the growth of GaN nanorods significantly. The growth procedure mainly follows the Tb catalyst-assisted VLS mechanism.

  19. Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals

    NASA Astrophysics Data System (ADS)

    Yamamoto, Yuma; Yoshikawa, Akira; Kusafuka, Toshiki; Okumura, Toshiki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

    2016-05-01

    High-performance AlGaN/AlGaN hetero-field-effect-transistor (HFET)-type photosensors with high photosensitivity were fabricated using p-type GaN comprising three-dimensional island crystals. The p-type GaN layers were grown on AlGaN layers at a high AlN molar fraction, and the area of p-type GaN comprising three-dimensional island crystals increased as the thickness of the p-type GaN film decreased, resulting in a reduced p-type GaN coverage ratio. The p-type GaN layers comprising three-dimensional island crystals and showing low coverage ratios were then used to fabricate HFET-type photosensors with high photosensitivity. A high light sensitivity of 1.5 × 104 A/W was obtained at a source–drain voltage (V SD) of 0.5 V for a photosensor with a p-type GaN thickness of 20 nm. Moreover, the dark current was suppressed to 10‑10 A/mm and the photosensor achieved an extremely high photocurrent to dark current density ratio.

  20. High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

    NASA Astrophysics Data System (ADS)

    Arakawa, Yasuaki; Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-08-01

    We have grown Mg-doped GaN films with low residual hydrogen concentration using a low-temperature pulsed sputtering deposition (PSD) process. The growth system is inherently hydrogen-free, allowing us to obtain high-purity Mg-doped GaN films with residual hydrogen concentrations below 5 × 1016 cm-3, which is the detection limit of secondary ion mass spectroscopy. In the Mg profile, no memory effect or serious dopant diffusion was detected. The as-deposited Mg-doped GaN films showed clear p-type conductivity at room temperature (RT) without thermal activation. The GaN film doped with a low concentration of Mg (7.9 × 1017 cm-3) deposited by PSD showed hole mobilities of 34 and 62 cm2 V-1 s-1 at RT and 175 K, respectively, which are as high as those of films grown by a state-of-the-art metal-organic chemical vapor deposition apparatus. These results indicate that PSD is a powerful tool for the fabrication of GaN-based vertical power devices.

  1. An ultra-thin compliant sapphire membrane for the growth of less strained, less defective GaN

    NASA Astrophysics Data System (ADS)

    Moon, Daeyoung; Jang, Jeonghwan; Choi, Daehan; Shin, In-Su; Lee, Donghyun; Bae, Dukkyu; Park, Yongjo; Yoon, Euijoon

    2016-05-01

    An ultra-thin (26 nm) sapphire (Al2O3) membrane was used as a compliant substrate for the growth of high quality GaN. The density of misfit dislocations per unit length at the interface between the GaN layer and the sapphire membrane was reduced by 28% compared to GaN on the conventional sapphire substrate. Threading dislocation density in GaN on the sapphire membrane was measured to be 2.4×108/cm2, which is lower than that for GaN on the conventional sapphire substrate (3.2×108/cm2). XRD and micro-Raman results verifed that the residual stress in GaN on the sapphire membrane was as low as 0.02 GPa due to stress absorption by the ultra-thin compliant sapphire membrane.

  2. Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma - effect of TMG flow rate and VHF power

    NASA Astrophysics Data System (ADS)

    Lu, Yi; Kondo, Hiroki; Ishikawa, Kenji; Oda, Osamu; Takeda, Keigo; Sekine, Makoto; Amano, Hiroshi; Hori, Masaru

    2014-04-01

    Gallium nitride (GaN) films have been grown by using our newly developed Radical-Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD) system. This system has three features: (1) application of very high frequency (60 MHz) power in order to increase the plasma density, (2) introduction of H2 gas together with N2 gas in the plasma discharge region to generate not only nitrogen radicals but also active NHx molecules, and (3) radical supply under remote plasma arrangement with suppression of charged ions and photons by employing a Faraday cage. Using this new system, we have studied the effect of the trimethylgallium (TMG) source flow rate and of the plasma generation power on the GaN crystal quality by using scanning electron microscopy (SEM) and double crystal X-ray diffraction (XRD). We found that this REMOCVD allowed the growth of epitaxial GaN films of the wurtzite structure of (0001) orientation on sapphire substrates with a high growth rate of 0.42 μm/h at a low temperature of 800 °C. The present REMOCVD is a promising method for GaN growth at relatively low temperature and without using costly ammonia gas.

  3. Effects of pre-annealed ITO film on the electrical characteristics of high-reflectance Ni/Ag/Ni/Au contacts to p-type GaN

    NASA Astrophysics Data System (ADS)

    Hu, Xiao-Long; Liu, Li; Wang, Hong; Zhang, Xi-Chun

    2015-12-01

    In this study, a Ni/Ag/Ni/Au multilayer with first Ni layer of 0.5 nm was first optimized for high reflectivity (92.3%), low specific contact resistance (2.1 × 10-3 Ω cm2) and good attachment strength to p-type GaN. To further decrease the contact resistance, the p-type GaN surface was previously treated with pre-annealed indium-tin-oxide (ITO) film before deposition of the Ni/Ag/Ni/Au multilayer, and resulted in a lower specific contact resistance of 1.9 × 10-4 Ω cm2. The X-ray photoelectron spectroscopy results indicated that Ga 2p core level of the p-type GaN surface with the pre-annealed ITO film had a lower binding energy, leading to a reduction in the contact resistance. Furthermore, GaN-based flip-chip light-emitting diodes (LEDs) with and without the pre-annealed ITO film were fabricated. The average forward voltage of the flip-chip LEDs fabricated with the pre-annealed ITO film is 3.22 V at an injection current density of 35 A/cm2, which is much lower than that (3.49 V) of flip-chip LEDs without the pre-annealed ITO film. These results reveal that the proposed approach is effectively to fabricate high quality p-type contacts toward high power GaN-based LEDs.

  4. Optically pumped GaN vertical cavity surface emitting laser with high index-contrast nanoporous distributed Bragg reflector.

    PubMed

    Lee, Seung-Min; Gong, Su-Hyun; Kang, Jin-Ho; Ebaid, Mohamed; Ryu, Sang-Wan; Cho, Yong-Hoon

    2015-05-01

    Laser operation of a GaN vertical cavity surface emitting laser (VCSEL) is demonstrated under optical pumping with a nanoporous distributed Bragg reflector (DBR). High reflectivity, approaching 100%, is obtained due to the high index-contrast of the nanoporous DBR. The VCSEL system exhibits low threshold power density due to the formation of high Q-factor cavity, which shows the potential of nanoporous medium for optical devices. PMID:25969197

  5. Gate stack engineering for GaN lateral power transistors

    NASA Astrophysics Data System (ADS)

    Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Chen, Kevin J.

    2016-02-01

    Developing optimal gate-stack technology is a key to enhancing the reliability and performance of GaN insulated-gate devices for high-voltage power switching applications. In this paper, we discuss current challenges and review our recent progresses in gate-stack technology development toward high-performance and high-reliability GaN power devices, including (1) interface engineering that creates a high-quality dielectric/III-nitride interface with low trap density; (2) barrier-layer engineering that enables optimal trade-off between performance and stability; (3) bulk quality and reliability enhancement of the gate dielectric. These gate-stack techniques in terms of new process development and device structure design are valuable to realize highly reliable and competitive GaN power devices.

  6. Developing an Absorption-Based Quality Control Method for Hu-Gan-Kang-Yuan Capsules by UFLC-QTOF-MS/MS Screening and HPLC-DAD Quantitative Determination.

    PubMed

    Wei, Fenghuan; Chen, Minting; Luo, Chaohua; Chen, Feilong; Shen, Qun; Mo, Zhixian

    2016-01-01

    Traditional Chinese Medicine Preparations (TCMPs) contain massive numbers of ingredients responsible for their multiple efficacies. An absorption-based quality control method for complicated TCMPs using Hu-gan-kang-yuan Capsule (HGKYC) as an example was developed. To select proper chemical markers for quality control of HGKYC, an ultra-fast liquid chromatography (UFLC) coupled with electrospray ionization quadrupole time-off light mass spectrometry (UFLC-QTOF-MS/MS) method was used for the rapid separation and structural identification of the constituents in the HGKYC extract and the rat serum after oral administration of HGKYC. As a result, one hundred and seven prototype constituents including flavonoids, organic acid, phenylpropanoids, anthraquinones, saponins, alkaloids, terpenes, phenols and amino acids in HGKYC extract, and 43 compounds found in rat serum after oral administration of HGKYC were unambiguously identified or tentatively characterized by comparing retention times and MS information with those of authentic standards or available literature references. Finally, a simple, low-cost and effective method of simultaneous determination for baicalein, wogonin, paeonol and emodin in HGKYC was developed using high performance liquid chromatography coupled with a diode array detector. In conclusion, an absorption-based quality control pattern was developed and successfully used for evaluating HGKYC. PMID:27213308

  7. Correlation on GaN epilayer quality and strain in GaN-based LEDs grown on 4-in. Si(1 1 1) substrate

    NASA Astrophysics Data System (ADS)

    Zhu, Youhua; Wang, Meiyu; Shi, Min; Huang, Jing; Zhu, Xiaojun; Yin, Haihong; Guo, Xinglong; Egawa, Takashi

    2015-09-01

    GaN-based LEDs with different thickness of n-GaN have been grown on 4-in. Si(1 1 1) substrate by metal-organic chemical vapor deposition. Quality of GaN epilayer has been evaluated by X-ray diffraction (XRD). Strain information in the structure has been directly investigated by means of micro-Raman scattering. It can be concluded that the compressive strain has varied to a tensile one with increasing n-GaN thickness from 0.5 to 2.0 μm. As a result, in a sample with a 2 μm n-GaN thickness, the tensile stress of GaN epilayer was calculated to be 0.44 GPa. Moreover, the strain states of GaN epilayer have been revealed from the variations of its a- and c-lattice constants, which have been calculated using XRD results. In addition, emission peak shift of GaN epilayer has been confirmed by cathodoluminescence measurement, and light output power of LEDs has also been measured. Nevertheless, some correlations in this study would inspire researcher to design much more reasonable GaN-LEDs structures in future.

  8. Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage

    NASA Astrophysics Data System (ADS)

    Maeda, Takuya; Okada, Masaya; Ueno, Masaki; Yamamoto, Yoshiyuki; Horita, Masahiro; Suda, Jun

    2016-09-01

    The photocurrent of GaN vertical Schottky barrier diodes was investigated under sub-bandgap wavelength light irradiation. Under a low reverse bias voltage, the photocurrent is induced by internal photoemission, while under a high reverse bias voltage, the photocurrent increases significantly with the bias voltage. This is due to sub-bandgap optical absorption in a depletion region due to the Franz–Keldysh effect. The voltage and wavelength dependences of the photocurrent are successfully explained quantitatively.

  9. High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

    SciTech Connect

    McSkimming, Brian M. Speck, James S.; Chaix, Catherine

    2015-09-15

    In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) and thus a significantly higher growth rate than has been previously reported. GaN films were grown using N{sub 2} gas flow rates between 5 and 25 sccm while varying the plasma source's RF forward power from 200 to 600 W. The highest growth rate, and therefore the highest active nitrogen flux, achieved was ∼7.6 μm/h. For optimized growth conditions, the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 × 3 μm) on the order of 1 nm. Secondary ion mass spectroscopy impurity analysis demonstrates oxygen and hydrogen incorporation of 1 × 10{sup 16} and ∼5 × 10{sup 17}, respectively. In addition, the authors have achieved PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ∼100 °C greater than any previously reported PAMBE growth of GaN. This growth temperature corresponds to GaN decomposition in vacuum of more than 20 nm/min; a regime previously unattainable with conventional nitrogen plasma sources. Arrhenius analysis of the decomposition rate shows that samples with a flux ratio below stoichiometry have an activation energy greater than decomposition of GaN in vacuum while samples grown at or above stoichiometry have decreased activation energy. The activation energy of decomposition for GaN in vacuum was previously determined to be ∼3.1 eV. For a Ga/N flux ratio of ∼1.5, this activation energy was found to be ∼2.8 eV, while for a Ga/N flux ratio of ∼0.5, it was found to be ∼7.9 eV.

  10. Transistors for Electric Motor Drives: High-Performance GaN HEMT Modules for Agile Power Electronics

    SciTech Connect

    2010-09-01

    ADEPT Project: Transphorm is developing transistors with gallium nitride (GaN) semiconductors that could be used to make cost-effective, high-performance power converters for a variety of applications, including electric motor drives which transmit power to a motor. A transistor acts like a switch, controlling the electrical energy that flows around an electrical circuit. Most transistors today use low-cost silicon semiconductors to conduct electrical energy, but silicon transistors don’t operate efficiently at high speeds and voltage levels. Transphorm is using GaN as a semiconductor material in its transistors because GaN performs better at higher voltages and frequencies, and it is more energy efficient than straight silicon. However, Transphorm is using inexpensive silicon as a base to help keep costs low. The company is also packaging its transistors with other electrical components that can operate quickly and efficiently at high power levels—increasing the overall efficiency of both the transistor and the entire motor drive.

  11. A structural investigation of highly ordered catalyst- and mask-free GaN nanorods.

    PubMed

    Figge, S; Aschenbrenner, T; Kruse, C; Kunert, G; Schowalter, M; Rosenauer, A; Hommel, D

    2011-01-14

    GaN nanorods were grown on r-plane sapphire substrates by a two-step approach. Nucleation sites for the nanorods were provided by the formation of AlN islands during nitridation in a metal organic vapor phase system. These islands are a-plane oriented as expected for nitride growth on r-plane sapphire. The nanorods themselves were grown by plasma assisted molecular beam epitaxy. The nanorods show an inclination towards the surface normal of 28.3° and are highly ordered. Studies with high resolution x-ray diffraction polar plots reveal the epitaxial relationship between the substrate and nanorods as a c-direction growth on inclined m-plane facets of the nitridated islands. The determined lattice constants show nanorods which are strain free. The growth direction of the nanorods has been confirmed in a transmission electron microscope by convergent beam electron diffraction patterns to be in the N-polar [Formula: see text] direction. PMID:21139192

  12. Detection of halide ions with AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Kang, B. S.; Ren, F.; Kang, M. C.; Lofton, C.; Tan, Weihong; Pearton, S. J.; Dabiran, A.; Osinsky, A.; Chow, P. P.

    2005-04-01

    AlGaN /GaN high electron mobility transistors (HEMTs) both with and without a Au gate are found to exhibit significant changes in channel conductance upon exposing the gate region to various halide ions. The polar nature of the halide ions leads to a change of surface charge in the gate region on the HEMT, producing a change in the surface potential at the semiconductor/liquid interface. HEMTs with a Au-gate electrode not only doubled the sensitivity of changing the channel conductance as compared to gateless HEMT, but also showed the opposite conductance behavior. When anions adsorbed on the Au, they produced a counter charge for electrovalence. These anions drag some counter ions from the bulk solution or create an image positive charge on the metal for the required neutrality. The gateless HEMTs can be used as sensors for a range of chemicals through appropriate modification with covalently bonded halide functional groups on the Au surface. This creates many possibilities to functionalize the surface for a wide range of integrated biological, chemical, and fluid monitoring sensors.

  13. Highly mismatched GaN1‑x Sb x alloys: synthesis, structure and electronic properties

    NASA Astrophysics Data System (ADS)

    Yu, K. M.; Sarney, W. L.; Novikov, S. V.; Segercrantz, N.; Ting, M.; Shaw, M.; Svensson, S. P.; Martin, R. W.; Walukiewicz, W.; Foxon, C. T.

    2016-08-01

    Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme based on small deviations from the virtual crystal approximation. Most of the HMAs were only studied in a dilute composition limit. Recent advances in understanding of the semiconductor synthesis processes allowed growth of thin films of HMAs under non-equilibrium conditions. Thus reducing the growth temperature allowed synthesis of group III-N–V HMAs over almost the entire composition range. This paper focuses on the GaN x Sb1‑x HMA which has been suggested as a potential material for solar water dissociation devices. Here we review our recent work on the synthesis, structural and optical characterization of GaN1‑x Sb x HMA. Theoretical modeling studies on its electronic structure based on the band anticrossing (BAC) model are also reviewed. In particular we discuss the effects of growth temperature, Ga flux and Sb flux on the incorporation of Sb, film microstructure and optical properties of the alloys. Results obtained from two separate MBE growths are directly compared. Our work demonstrates that a large range of direct bandgap energies from 3.4 eV to below 1.0 eV can be achieved for this alloy grown at low temperature. We show that the electronic band structure of GaN1‑x Sb x HMA over the entire composition range is well described by a modified BAC model which includes the dependence of the host matrix band edges as well as the BAC model coupling parameters on composition. We emphasize that the modified BAC model of the electronic band structure developed for the full composition of GaN x Sb1‑x is general and is applicable to any HMA.

  14. Coherent growth of GaGdN layers with high Gd concentration on GaN(0001)

    SciTech Connect

    Higashi, K.; Hasegawa, S.; Abe, D.; Mitsuno, Y.; Komori, S.; Ishimaru, M.; Asahi, H.; Ishikawa, F.

    2012-11-26

    We report on the coherent growth of GaGdN with high Gd concentration on a GaN template using radio-frequency plasma-assisted molecular beam epitaxy under elevated growth conditions. X-ray diffraction and cross-sectional transmission electron microscopy observations revealed that at a growth temperature of 700 {sup Degree-Sign }C or below, GaGdN layers are coherently grown on the GaN templates without segregation of the secondary phases. As the GdN mole fraction x was increased to 0.08, the c-axis lattice parameter in Ga{sub 1-x}Gd{sub x}N increased linearly. Increasing the growth temperature to 750 {sup Degree-Sign }C causes lattice relaxation in GaGdN. All GaGdN samples exhibited photoluminescence emissions near the band-edge, a blue luminescence band emission, and a green luminescence band emission. The origin of the green luminescence band emission is discussed in relation to the compressive strain existing in the GaGdN layers coherently grown on GaN.

  15. Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

    SciTech Connect

    Lo, Fang-Yuh Huang, Cheng-De; Chou, Kai-Chieh; Guo, Jhong-Yu; Liu, Hsiang-Lin; Chia, Chi-Ta; Ney, Verena; Ney, Andreas; Shvarkov, Stepan; Reuter, Dirk; Wieck, Andreas D.; Pezzagna, Sébastien; Chern, Ming-Yau; Massies, Jean

    2014-07-28

    Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 10{sup 14} to 1 × 10{sup 16 }cm{sup −2}. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 10{sup 15 }cm{sup −2} before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

  16. High growth rate of AlGaN for buffer structures for GaN on Si to increase throughput

    NASA Astrophysics Data System (ADS)

    Matsumoto, Koh; Ubukata, Akinori; Ikenaga, Kazutada; Naito, Kazuki; Yamamoto, Jun; Yano, Yoshiki; Tabuchi, Toshiya; Yamaguchi, Akira; Ban, Yuzaburo; Uchiyama, Kosuke

    2012-03-01

    Throughput requirement of the epitaxial process of GaN on Si is described. The impact of the growth rate of AlGaN for the buffer layer of GaN on Si is highlighted. In the attempt of growing GaN on Si, we have tested a production scale high flow speed MOVPE reactor (TAIYO NIPPON SANSO UR25k) for 6 inch X 7 wafers. Al0.58Ga0.42N was grown with the growth rate of 1.85μm/hr at 30 kPa. AlN was grown with the growth rate of 1.4μm/hr at 13kPa. AlN/GaN SLS (5nm/20nm) was also grown at the growth rate of 1.4μm/hr. An excellent uniformity of aluminum concentration of less than 0.5% was also obtained for Al0.58Ga0.42N. The challenge which we are facing to further increase of the throughput is summarized.

  17. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system

    NASA Astrophysics Data System (ADS)

    Haibo, Yin; Xiaoliang, Wang; Junxue, Ran; Guoxin, Hu; Lu, Zhang; Hongling, Xiao; Jing, Li; Jinmin, Li

    2011-03-01

    A homemade 7 × 2 inch MOCVD system is presented. With this system, high quality GaN epitaxial layers, InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown. The non-uniformity of undoped GaN epitaxial layers is as low as 2.86%. Using the LED structural epitaxial layers, blue LED chips with area of 350 × 350 μm2 were fabricated. Under 20 mA injection current, the optical output power of the blue LED is 8.62 mW.

  18. Crystallographically tilted and partially strain relaxed GaN grown on inclined (111) facets etched on Si(100) substrate

    SciTech Connect

    Ansah Antwi, K. K.; Soh, C. B.; Wee, Q.; Tan, Rayson J. N.; Tan, H. R.; Yang, P.; Sun, L. F.; Shen, Z. X.; Chua, S. J.

    2013-12-28

    High resolution X-ray diffractometry (HR-XRD), Photoluminescence, Raman spectroscopy, and Transmission electron microscope measurements are reported for GaN deposited on a conventional Si(111) substrate and on the (111) facets etched on a Si(100) substrate. HR-XRD reciprocal space mappings showed that the GaN(0002) plane is tilted by about 0.63° ± 0.02° away from the exposed Si(111) growth surface for GaN deposited on the patterned Si(100) substrate, while no observable tilt existed between the GaN(0002) and Si(111) planes for GaN deposited on the conventional Si(111) substrate. The ratio of integrated intensities of the yellow to near band edge (NBE) luminescence (I{sub YL}/I{sub NBE}) was determined to be about one order of magnitude lower in the case of GaN deposited on the patterned Si(100) substrate compared with GaN deposited on the conventional Si(111) substrate. The Raman E{sub 2}(high) optical phonon mode at 565.224 ± 0.001 cm{sup −1} with a narrow full width at half maximum of 1.526 ± 0.002 cm{sup −1} was measured, for GaN deposited on the patterned Si(100) indicating high material quality. GaN deposition within the trench etched on the Si(100) substrate occurred via diffusion and mass-transport limited mechanism. This resulted in a differential GaN layer thickness from the top (i.e., 1.8 μm) of the trench to the bottom (i.e., 0.3 μm) of the trench. Mixed-type dislocation constituted about 80% of the total dislocations in the GaN grown on the inclined Si(111) surface etched on Si(100)

  19. Electrical and structural analysis of high-dose Si implantation in GaN

    SciTech Connect

    Zolper, J.C.; Tan, H.H.; Williams, J.S.; Zou, J.; Cockayne, D.J.; Pearton, S.J.; Crawford, M.H.; Karlicek, R.F. , Jr.

    1997-05-01

    For the development of ion implantation processes for GaN to advanced devices, it is important to understand the dose dependence of impurity activation along with implantation-induced damage generation and removal. We find that Si implantation in GaN can achieve 50{percent} activation at a dose of 1{times}10{sup 16} cm{sup {minus}2}, despite significant residual damage after the 1100{degree}C activation anneal. The possibility that the generated free carriers are due to implantation damage alone and not Si-donor activation is ruled out by comparing the Si results to those for implantation of the neutral species Ar. Ion channeling and cross-sectional transmission electron microscopy are used to characterize the implantation-induced damage both as implanted and after a 1100{degree}C anneal. Both techniques confirm that significant damage remains after the anneal, which suggests that activation of implanted Si donors in GaN doses not require complete damage removal. However, an improved annealing process may be needed to further optimize the transport properties of implanted regions in GaN. {copyright} {ital 1997 American Institute of Physics.}

  20. Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhu, Yunnong; Lin, Zhiting; Li, Guoqiang

    2016-04-01

    The stress-free GaN epitaxial films have been directly grown by pulsed laser deposition (PLD) at 850 °C, and the effect of different stress on the microstructure of as-grown GaN epitaxial films has been explored in detail. The as-grown stress-free GaN epitaxial films exhibit very smooth surface without any particles and grains, which is confirmed by the smallest surface root-mean-square roughness of 2.3 nm measured by atomic force microscopy. In addition, they also have relatively high crystalline quality, which is proved by the small full-width at half maximum values of GaN(0002) and GaN (10 1 bar 2) X-ray rocking curves as 0.27° and 0.68°, respectively. However, when the growth temperature is lower or higher than 850 °C, internal or thermal stress would be increased in as-grown GaN epitaxial films. To release the larger stress, a great number of dislocations are generated. Many irregular particulates, hexagonal GaN gains and pits are therefore produced on the films surface, and the crystalline quality is greatly reduced consequently. This work has demonstrated the direct growth of stress-free GaN epitaxial films with excellent surface morphology and high crystalline quality by PLD, and presented a comprehensive study on the origins and the effect of stress in GaN layer. It is instructional to achieve high-quality nitride films by PLD, and shows great potential and broad prospect for the further development of high-performance GaN-based devices.

  1. Comparison of the microstructural characterizations of GaN layers grown on Si (111) and on sapphire

    NASA Astrophysics Data System (ADS)

    Shin, Huiyoun; Jeon, Kisung; Jang, Youngil; Gang, Mingu; Choi, Myungshin; Park, Wonhwa; Park, Kyuho

    2013-10-01

    Due to the large differences in the lattice constants and the thermal expansion coefficients between GaN and Si, GaN growth on a Si substrate usually leads initially to high defect densities and cracks. If high-quality GaN films on Si substrate are to be obtained, it is essential to understand the different growth characteristics of GaN layers grown on Si and on sapphire. In this study, the GaN specimens were grown on sapphire and Si (111) substrates with AlGaN and AlN buffer layers, respectively, by metalorganic chemical vapor deposition (MOCVD). Using transmission electron microscopy (TEM) and micro-Raman spectroscope, we carried out a comparative investigation of GaN growth by characterizing lattice coherency, defect density, and residual strain. These analyses revealed that the GaN layers grown on Si have much residual tensile strain and that strain has an effect on the formation of InGaN/GaN multiple quantum wells (MQWs) above the GaN layers.

  2. Growth of ZnO and GaN Films

    NASA Astrophysics Data System (ADS)

    Chang, J.; Hong, S.-K.; Matsumoto, K.; Tokunaga, H.; Tachibana, A.; Lee, S. W.; Cho, M.-W.

    . Zinc oxide (ZnO) and gallium nitride (GaN) are wide bandgap semi conductors applicable to light emitting diodes (LEDs) and laser diodes (LDs) with wavelengths ranging from ultraviolet to blue light. Now ZnO and GaN are key ma terials for optoelectronic device applications and their applications are being rapidly expanded to lots of other technology including electronics, biotechnology, nanotech-nology, and fusion technology among all these. As a fundamental starting point for the development of this new technique, epitaxy of ZnO and GaN films is one of the most important key technology. Hence, development of the growth technique for high quality epitaxial films is highly necessary. Among the various kinds of epi taxy technique for semiconductor films developed so far, physical vapor deposition (PVD)-based epitaxy technique has been revealed to be the appropriate way for the high quality ZnO film and related alloy growths, while chemical vapor deposition (CVD)-based epitaxy technique has been proved to be the best method for the high quality GaN film and related alloy growths.

  3. Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates

    SciTech Connect

    Ansah-Antwi, KwaDwo Konadu Chua, Soo Jin; Soh, Chew Beng; Liu, Hongfei

    2015-11-15

    The four nearest Si(111) multifaceted sidewalls were exposed inside an array of 3 μm-wide square holes patterned on an Si(100) substrate, and this patterned Si(100) substrate was used as a substrate for the deposition of a gallium nitride (GaN) epilayer. Subsequently the effect that the growth pressure, the etched-hole profiles, and the etched-hole arrangement had upon the quality of the as-grown GaN was investigated. The coalescence of the as-grown GaN epilayer on the exposed Si(111) facets was observed to be enhanced with reduced growth pressure from 120 to 90 Torr. A larger Si(001) plane area at the bottom of the etched holes resulted in bidirectional GaN domains, which resulted in poor material quality. The bidirectional GaN domains were observed as two sets of six peaks via a high-resolution x-ray diffraction phi scan of the GaN(10-11) reflection. It was also shown that a triangular array of etched holes was more desirable than square arrays of etched holes for the growth high-quality and continuous GaN films.

  4. Breakdown mechanism in AlGaN/GaN high-electron mobility transistor structure on free-standing n-type GaN substrate

    NASA Astrophysics Data System (ADS)

    Tanabe, Shinichi; Watanabe, Noriyuki; Matsuzaki, Hideaki

    2016-05-01

    The breakdown mechanism in a high-electron mobility transistor structure on free-standing n-type GaN substrates consisting of a C-doped GaN layer as a high-resistivity buffer was investigated with a two-terminal vertical device that has a C-doped GaN buffer between electrodes. Initially, current density increases with the square of bias voltage. This is then followed by an abrupt increase by several orders of magnitude within ten volts, which results in breakdown. These behaviors are consistent with the theory of the space-charge limited current. In this theory, current density increases steeply when trap sites at a certain energy level are completely filled with injected carriers. These results indicate that the existence of trap levels in the C-doped GaN layer is one of the possible factors that determine the breakdown. The trap density and trap level of the C-doped GaN layer were also evaluated.

  5. Growth diagram of N-face GaN (0001{sup ¯}) grown at high rate by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Okumura, Hironori McSkimming, Brian M.; Speck, James S.; Huault, Thomas; Chaix, Catherine

    2014-01-06

    N-face GaN was grown on free-standing GaN (0001{sup ¯}) substrates at a growth rate of 1.5 μm/h using plasma-assisted molecular beam epitaxy. Difference in growth rate between (0001{sup ¯}) and (0001) oriented GaN depends on nitrogen plasma power, and the (0001{sup ¯}) oriented GaN had only 70% of the growth rate of the (0001) oriented GaN at 300 W. Unintentional impurity concentrations of silicon, carbon, and oxygen were 2 × 10{sup 15}, 2 × 10{sup 16}, and 7 × 10{sup 16} cm{sup −3}, respectively. A growth diagram was constructed that shows the dependence of the growth modes on the difference in the Ga and active nitrogen flux, Φ{sub Ga} − Φ{sub N*}, and the growth temperature. At high Φ{sub Ga} − Φ{sub N*} (Φ{sub Ga} ≫ Φ{sub N*}), two-dimensional (step-flow and layer-by-layer) growth modes were realized. High growth temperature (780 °C) expanded the growth window of the two-dimensional growth modes, achieving a surface with rms roughness of 0.48 nm without Ga droplets.

  6. Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

    PubMed Central

    2012-01-01

    GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of room temperature photoluminescence, indicating that the GaN nanowall network is of high quality. The sheet resistance of the Si-doped GaN nanowall network along the lateral direction was 58 Ω/. The conductive porous nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining. PMID:23270331

  7. Patterning of GaN in high-density Cl{sub 2}- and BCl{sub 3}-based plasmas

    SciTech Connect

    Shul, R.J.; Briggs, R.D.; Han, J.; Pearton, S.J.; Lee, J.W.; Vartuli, C.B.; Killeen, K.P.; Ludowise, M.J.

    1997-05-01

    Fabrication of group-III nitride electronic and photonic devices relies heavily on the ability to pattern features with anisotropic profiles, smooth surface morphologies, etch rates often exceeding 1 {micro}m/min, and a low degree of plasma-induced damage. Patterning these materials has been especially difficult due to their high bond energies and their relatively inert chemical nature as compared to other compound semiconductors. However, high-density plasma etching has been an effective patterning technique due to ion fluxes which are 2 to 4 orders of magnitude higher than conventional RIE systems. GaN etch rates as high as {approximately}1.3 {micro}m/min have been reported in ECR generated ICl plasmas at {minus}150 V dc-bias. In this study, the authors report high-density GaN etch results for ECR- and ICP-generated plasmas as a function of Cl{sub 2}- and BCl{sub 3}-based plasma chemistries.

  8. Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors

    SciTech Connect

    Lu, Jing Zheng, Xun; Guidry, Matthew; Denninghoff, Dan; Ahmadi, Elahe; Lal, Shalini; Keller, Stacia; Mishra, Umesh K.; DenBaars, Steven P.

    2014-03-03

    Scaling down the channel-thickness (t{sub ch}) in GaN/(In, Al, Ga)N high-electron-mobility-transistors (HEMTs) is essential to eliminating short-channel effects in sub 100 nm gate length HEMTs. However, this scaling can degrade both charge density (n{sub s}) and mobility (μ), thereby reducing channel-conductivity. In this study, the back-barrier design in N-polar GaN/(In, Al, Ga)N was engineered to achieve highly conductive-channels with t{sub ch} < 5-nm using metal organic chemical vapor deposition. Compositional-grading was found to be the most effective approach in reducing channel-conductivity for structures with t{sub ch} ∼ 3-nm. For a HEMT with 3-nm-thick-channel, a sheet-resistance of 329 Ω/◻ and a peak-transconductance of 718 mS/mm were demonstrated.

  9. High uniform growth of 4-inch GaN wafer via flow field optimization by HVPE

    NASA Astrophysics Data System (ADS)

    Cheng, Yutian; Liu, Peng; Wu, Jiejun; Xiang, Yong; Chen, Xinjuan; Ji, Cheng; Yu, Tongjun; Zhang, Guoyi

    2016-07-01

    The uniformity of flow field inner the reactor plays a crucial role for hydride vapor phase epitaxy (HVPE) crystal growth and its more important for large scale substrate. A new nozzle structure was designed by adding a push and dilution (PD) gas pipe in the center of gas channels for a 4-inch HVPE (PD-HVPE) system. Experimental results showed that the thickness inhomogeneity of 46 μm 4-inch GaN layer could reach ±1.8% by optimizing PD gas, greatly improved from ±14% grown with conventional nozzle. The simulations of the internal flow field were consistent with our experiment, and the enhancement in uniformity should be attributed to the redistribution of GaCl and NH3 upon the wafer induced by PD pipe. The full width at half maximum (FWHM) of X-ray diffraction rocking curves for the 4-inch GaN film were about 224 and 200 arcsec for (002) and (102) reflection. The dislocation density of as-grown GaN was about 6.4×107 cm-2.

  10. Anisotropy of effective electron masses in highly doped nonpolar GaN

    SciTech Connect

    Feneberg, Martin Lange, Karsten; Lidig, Christian; Wieneke, Matthias; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois; Goldhahn, Rüdiger

    2013-12-02

    The anisotropic effective electron masses in wurtzite GaN are determined by generalized infrared spectroscopic ellipsometry. Nonpolar (112{sup ¯}0) oriented thin films allow accessing both effective masses, m{sub ⊥}{sup *} and m{sub ∥}{sup *}, by determining the screened plasma frequencies. A n-type doping range up to 1.7 × 10{sup 20} cm{sup −3} is investigated. The effective mass ratio m{sub ⊥}{sup *}/m{sub ∥}{sup *} is obtained with highest accuracy and is found to be 1.11 independent on electron concentration up to 1.2 × 10{sup 20} cm{sup −3}. For higher electron concentrations, the conduction band non-parabolicity is mirrored in changes. Absolute values for effective electron masses depend on additional input of carrier concentrations determined by Hall effect measurements. We obtain m{sub ⊥}{sup *}=(0.239±0.004)m{sub 0} and m{sub ∥}{sup *}=(0.216±0.003)m{sub 0} for the parabolic range of the GaN conduction band. Our data are indication of a parabolic GaN conduction band up to an energy of approximately 400 meV above the conduction band minimum.

  11. A novel MOCVD reactor for growth of high-quality GaN-related LED layers

    NASA Astrophysics Data System (ADS)

    Hu, Shaolin; Liu, Sheng; Zhang, Zhi; Yan, Han; Gan, Zhiyin; Fang, Haisheng

    2015-04-01

    Gallium nitride (GaN), a direct bandgap semiconductor widely used in bright light-emitting diodes (LEDs), is mostly grown by metal-organic chemical vapor deposition (MOCVD) method. A good reactor design is critical for the production of high-quality GaN thin films. In this paper, we presented a novel buffered distributed spray (BDS) MOCVD reactor with vertical gas sprayers and horizontal gas inlets. Experiments based on a 36×2″ BDS reactor were conducted to examine influence of the process parameters, such as the operating pressure and the gas flow rate, on the growth efficiency and on the layer thickness uniformity. Transmission electron microscopy (TEM) and photoluminescence (PL) are further conducted to evaluate quality of the epitaxial layers and to check performance of the reactor. Results show that the proposed novel reactor is of high performance in growing high-quality thin films, including InGaN/GaN multiquantum wells (MQWs) structures.

  12. Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range

    SciTech Connect

    Yu, K. M.; Novikov, S. V.; Broesler, R.; Demchenko, I. N.; Denlinger, J. D.; Liliental-Weber, Z.; Luckert, F.; Martin, R. W.; Walukiewicz, W.; Foxon, C. T.

    2009-08-29

    Alloying is a commonly accepted method to tailor properties of semiconductor materials for specific applications. Only a limited number of semiconductor alloys can be easily synthesized in the full composition range. Such alloys are, in general, formed of component elements that are well matched in terms of ionicity, atom size, and electronegativity. In contrast there is a broad class of potential semiconductor alloys formed of component materials with distinctly different properties. In most instances these mismatched alloys are immiscible under standard growth conditions. Here we report on the properties of GaN1-xAsx, a highly mismatched, immiscible alloy system that was successfully synthesized in the whole composition range using a nonequilibrium low temperature molecular beam epitaxy technique. The alloys are amorphous in the composition range of 0.17GaN to ~;;0.8 eV at x~;;0.85. The reduction in the band gap can be attributed primarily to the downward movement of the conduction band for alloys with x>0.2, and to the upward movement of the valence band for alloys with x<0.2. The unique features of the band structure offer an opportunity of using GaN1-xAsx alloys for various types of solar power conversion devices.

  13. Pulsed laser annealing of Be-implanted GaN

    SciTech Connect

    Wang, H.T.; Tan, L.S.; Chor, E.F.

    2005-11-01

    Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well.

  14. High Cubic-Phase Purity InN on MgO (001) Using Cubic-Phase GaN as a Buffer Layer

    SciTech Connect

    Sanorpim, S.; Kuntharin, S.; Parinyataramas, J.; Yaguchi, H.; Iwahashi, Y.; Orihara, M.; Hijikata, Y.; Yoshida, S.

    2011-12-23

    High cubic-phase purity InN films were grown on MgO (001) substrates by molecular beam epitaxy with a cubic-phase GaN buffer layer. The cubic phase purity of the InN grown layers has been analyzed by high resolution X-ray diffraction, {mu}-Raman scattering and transmission electron microscopy. It is evidenced that the hexagonal-phase content in the InN overlayer much depends on hexagonal-phase content in the cubic-phase GaN buffer layer and increases with increasing the hexagonal-phase GaN content. From Raman scattering measurements, in addition, the InN layer with lowest hexagonal component (6%), only Raman characteristics of cubic TO{sub InN} and LO{sub InN} modes were observed, indicating a formation of a small amount of stacking faults, which does not affect on vibrational property.

  15. High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

    SciTech Connect

    Kyle, Erin C. H. Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Speck, James S.; Wu, Yuh-Renn

    2014-05-21

    The dependence of electron mobility on growth conditions and threading dislocation density (TDD) was studied for n{sup −}-GaN layers grown by ammonia-based molecular beam epitaxy. Electron mobility was found to strongly depend on TDD, growth temperature, and Si-doping concentration. Temperature-dependent Hall data were fit to established transport and charge-balance equations. Dislocation scattering was analyzed over a wide range of TDDs (∼2 × 10{sup 6} cm{sup −2} to ∼2 × 10{sup 10} cm{sup −2}) on GaN films grown under similar conditions. A correlation between TDD and fitted acceptor states was observed, corresponding to an acceptor state for almost every c lattice translation along each threading dislocation. Optimized GaN growth on free-standing GaN templates with a low TDD (∼2 × 10{sup 6} cm{sup −2}) resulted in electron mobilities of 1265 cm{sup 2}/Vs at 296 K and 3327 cm{sup 2}/Vs at 113 K.

  16. Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X Schottky Metal Structures for High-Power Applications

    NASA Astrophysics Data System (ADS)

    Hsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I.; Chang, Edward Yi

    2016-04-01

    In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400°C. Thus, the Ti/Al/W ohmic and WN X Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.

  17. Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X Schottky Metal Structures for High-Power Applications

    NASA Astrophysics Data System (ADS)

    Hsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I.; Chang, Edward Yi

    2016-07-01

    In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WN x Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400°C. Thus, the Ti/Al/W ohmic and WN X Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.

  18. Ionic liquid gating on atomic layer deposition passivated GaN: Ultra-high electron density induced high drain current and low contact resistance

    NASA Astrophysics Data System (ADS)

    Zhou, Hong; Du, Yuchen; Ye, Peide D.

    2016-05-01

    Herein, we report on achieving ultra-high electron density (exceeding 1014 cm-2) in a GaN bulk material device by ionic liquid gating, through the application of atomic layer deposition (ALD) of Al2O3 to passivate the GaN surface. Output characteristics demonstrate a maximum drain current of 1.47 A/mm, the highest reported among all bulk GaN field-effect transistors, with an on/off ratio of 105 at room temperature. An ultra-high electron density exceeding 1014 cm-2 accumulated at the surface is confirmed via Hall-effect measurement and transfer length measurement. In addition to the ultra-high electron density, we also observe a reduction of the contact resistance due to the narrowing of the Schottky barrier width on the contacts. Taking advantage of the ALD surface passivation and ionic liquid gating technique, this work provides a route to study the field-effect and carrier transport properties of conventional semiconductors in unprecedented ultra-high charge density regions.

  19. Effect of double superlattice interlayers on growth of thick GaN epilayers on Si(110) substrates by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Shen, Xu-Qiang; Takahashi, Tokio; Ide, Toshihide; Shimizu, Mitsuaki

    2016-05-01

    The effect of double thin AlN/GaN superlattice interlayers (SL ILs) on the growth of thick GaN epilayers by metalorganic chemical vapor deposition (MOCVD) on Si(110) substrates is investigated. It is found that the GaN middle layer (GaN layer between the two SL ILs) can affect the strain state of the GaN epilayer. By comparison with the case of a single SL IL, it is shown that the double SL ILs can have a stronger compressive effect on the GaN epilayer grown on it, which results in lower residual tensile strain in the GaN film after the growth. By optimizing the GaN middle layer thickness, a 4-µm-thick crack-free GaN epilayer is successfully achieved. By this simple technique, it is expected that high-quality crack-free thick GaN can be grown on Si substrates for optical and electronic device applications.

  20. Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

    SciTech Connect

    Yang, J.; Zhao, D. G. Jiang, D. S.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Le, L. C.; Li, X. J.; He, X. G.; Liu, J. P.; Yang, H.; Zhang, Y. T.; Du, G. T.

    2015-02-07

    The optical and structural properties of InGaN/GaN multi-quantum wells (MQWs) with different thicknesses of low temperature grown GaN cap layers are investigated. It is found that the MQW emission energy red-shifts and the peak intensity decreases with increasing GaN cap layer thickness, which may be partly caused by increased floating indium atoms accumulated at quantum well (QW) surface. They will result in the increased interface roughness, higher defect density, and even lead to a thermal degradation of QW layers. An extra growth interruption introduced before the growth of GaN cap layer can help with evaporating the floating indium atoms, and therefore is an effective method to improve the optical properties of high indium content InGaN/GaN MQWs.

  1. High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup ¯}1{sup ¯}) GaN substrates

    SciTech Connect

    Pourhashemi, A. Farrell, R. M.; Cohen, D. A.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2015-03-16

    We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup ¯}1{sup ¯}) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451 nm at room temperature, an output power of 2.52 W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34 A. The measured differential quantum efficiency was 50%.

  2. Strain-induced step bunching in orientation-controlled GaN on Si

    NASA Astrophysics Data System (ADS)

    Narita, Tetsuo; Iguchi, Hiroko; Horibuchi, Kayo; Otake, Nobuyuki; Hoshi, Shinichi; Tomita, Kazuyoshi

    2016-05-01

    We report a technique for the fabrication of high-quality GaN-on-silicon (Si) substrates for use in various power applications. GaN epitaxial layers were generated on Si(111) vicinal faces that had been previously covered with a thin coating of Al2O3 to control the orientation of the AlN seed layers. We obtained orientation-controlled GaN layers and found a linear relationship between the GaN c-axis and Si[111] tilt angles. As a result, the threading dislocation density in the AlN seed layer was reduced and high-quality GaN layers were generated. The X-ray rocking curves for these layers exhibited full width at half maximum values of 390‧‧ and 550‧‧ for the (004) and (114) reflections, respectively. Significant step bunching was observed on a GaN(0001) vicinal face produced using this technique, attributed to strain-induced attractive interactions between steps. Thus, by controlling the strain near the surface layer, we achieved the step flow growth of GaN on Si.

  3. Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE

    NASA Astrophysics Data System (ADS)

    Lekhal, Kaddour; Bae, Si-Young; Lee, Ho-Jun; Mitsunari, Tadashi; Tamura, Akira; Deki, Manato; Honda, Yoshio; Amano, Hiroshi

    2016-08-01

    The selective area growth (SAG) of GaN was implemented on patterned GaN/sapphire templates by hydride vapor phase epitaxy (HVPE) to fabricate regular arrays of Ga-polar GaN microrods. The control of growth parameters such as H2/N2 carrier gas ratio, growth temperature, and absolute NH3/HCl gas flow resulted in changes in the growth morphology. In particular, for an optimized mixed-carrier gas ratio of H2 to N2, we achieved vertically well-aligned microrods. The topmost regions of the GaN microrods were terminated with pyramidal facets, indicating typical Ga polarity. The optical properties of the grown microrods were characterized by cathodoluminescence (CL) at a low temperature. This revealed that the GaN microrods had high crystal quality since they exhibited suppressed yellow luminescence as well as strong band edge emission.

  4. GaN etching in BCl{sub 3}Cl{sub 2} plasmas

    SciTech Connect

    Shul, R.J.; Ashby, C.I.H.; Willison, C.G.; Zhang, L.; Han, J.; Bridges, M.M.; Pearton, S.J.; Lee, J.W.; Lester, L.F.

    1998-04-01

    GaN etching can be affected by a wide variety of parameters including plasma chemistry and plasma density. Chlorine-based plasmas have been the most widely used plasma chemistries to etch GaN due to the high volatility of the GaCl{sub 3} and NCl etch products. The source of Cl and the addition of secondary gases can dramatically influence the etch characteristics primarily due to their effect on the concentration of reactive Cl generated in the plasma. In addition, high-density plasma etch systems have yielded high quality etching of GaN due to plasma densities which are 2 to 4 orders of magnitude higher than reactive ion etch (RIE) plasma systems. The high plasma densities enhance the bond breaking efficiency of the GaN, the formation of volatile etch products, and the sputter desorption of the etch products from the surface. In this study, the authors report GaN etch results for a high-density inductively coupled plasma (ICP) as a function of BCl{sub 3}:Cl{sub 2} flow ratio, dc-bias, chamber-pressure, and ICP source power. GaN etch rates ranging from {approximately}100 {angstrom}/min to > 8,000 {angstrom}/min were obtained with smooth etch morphology and anisotropic profiles.

  5. Refractive index of erbium doped GaN thin films

    SciTech Connect

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.

    2014-08-25

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  6. Optically generated giant traps in high-purity GaN

    NASA Astrophysics Data System (ADS)

    Reshchikov, M. A.; McNamara, J. D.; Usikov, A.; Helava, H.; Makarov, Yu.

    2016-02-01

    An unusual temperature dependence of the photoluminescence lifetime for the green luminescence (GL) band in GaN is explained. This GL is caused by an internal transition of electrons from an excited state to the ground state of the 0/+ transition level of the isolated CN defect. The excited state appears only after the CN defect captures two photogenerated holes. The electron capture by the excited state is nonradiative, yet the lifetime of such can be probed by the temperature variation of the GL lifetime, whose temperature dependence shows a classic case of electron capture by a giant trap.

  7. Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate

    NASA Astrophysics Data System (ADS)

    Tendille, Florian; Hugues, Maxime; Vennéguès, Philippe; Teisseire, Monique; De Mierry, Philippe

    2015-06-01

    Thanks to the use of two successive selective growths by metal organic chemical vapor deposition reactor, high quality semipolar (11-22) GaN with a homogenous defect repartition over the surface was achieved. The procedure starts with a first selective growth on a patterned sapphire substrate, leading to continuous stripes of three dimensional (3D) GaN crystals of low defect density. Then, a second selective growth step is achieved by depositing a SiNx nano-mask and a low temperature GaN nano-layer on the top of the GaN stripes. Hereby, we demonstrate an original way to obtain a homoepitaxial selective growth on 3D GaN crystals by taking advantage of the different crystallographic planes available. Basal stacking faults (BSFs) are generated during this second selective growth but could be eliminated by using a three-step growth method in which elongated voids are created above the defective area. For a fully coalesced sample grown using the 2 step method, dislocation density of 1.2 × 108 cm-2 and BSFs density of 154 cm-1 with a homogenous distribution have been measured by cathodoluminescence at 80 K. Consequently the material quality of this coalesced semipolar layer is comparable to the one of polar GaN on c-plane sapphire.

  8. Fabrication of GaN Microporous Structure at a GaN/Sapphire Interface as the Template for Thick-Film GaN Separation Grown by HVPE

    NASA Astrophysics Data System (ADS)

    Chen, Jianli; Cheng, Hongjuan; Zhang, Song; Lan, Feifei; Qi, Chengjun; Xu, Yongkuan; Wang, Zaien; Li, Jing; Lai, Zhanping

    2016-06-01

    In this paper, a microporous structure at the GaN/sapphire interface has been obtained by an electrochemical etching method via a selective etching progress using an as-grown GaN/sapphire wafer grown by metal organic chemical vapor deposition. The as-prepared GaN interfacial microporous structure has been used as a template for the following growth of thick-film GaN crystal by hydride vapor phase epitaxy (HVPE), facilitating the fabrication of a free-standing GaN substrate detached from a sapphire substrate. The evolution of the interfacial microporous structure has been investigated by varying the etching voltages and time, and the formation mechanism of interfacial microporous structure has been discussed in detail as well. Appropriate interfacial microporous structure is beneficial for separating the thick GaN crystal grown by HVPE from sapphire during the cooling down process. The separation that occurred at the place of interfacial microporous can be attributed to the large thermal strain between GaN and sapphire. This work realized the fabrication of a free-standing GaN substrate with high crystal quality and nearly no residual strain.

  9. Effect of GaN interlayer on polarity control of epitaxial ZnO thin films grown by molecular beam epitaxy

    SciTech Connect

    Wang, X. Q.; Sun, H. P.; Pan, X. Q.

    2010-10-11

    Epitaxial ZnO thin films were grown on nitrided (0001) sapphire substrates with an intervening GaN layer by rf-plasma-assisted molecular beam epitaxy. It was found that polarity of the ZnO epilayer could be controlled by modifying the GaN interlayer. ZnO grown on a distorted 3-nm-thick GaN interlayer has Zn-polarity while ZnO on a 20-nm-thick GaN interlayer with a high structural quality has O-polarity. High resolution transmission electron microscopy analysis indicates that the polarity of ZnO epilayer is controlled by the atomic structure of the interface between the ZnO buffer layer and the intervening GaN layer.

  10. Structural and vibrational properties of GaN

    NASA Astrophysics Data System (ADS)

    Deguchi, T.; Ichiryu, D.; Toshikawa, K.; Sekiguchi, K.; Sota, T.; Matsuo, R.; Azuhata, T.; Yamaguchi, M.; Yagi, T.; Chichibu, S.; Nakamura, S.

    1999-08-01

    Structural and vibrational properties of device quality pure GaN substrate grown using a lateral epitaxial overgrowth (LEO) technique were studied using x-ray diffraction, Brillouin, Raman, and infrared spectroscopy. Lattice constants were found to be a=3.1896±0.0002 Å and c=5.1855±0.0002 Å. Comparing the results with those on GaN epilayer directly grown on sapphire substrate, it is shown that the GaN substrate is indeed of high quality, i.e., the lattice is relaxed. However the GaN substrate has a small enough but finite residual strain arising from the pileup of the lateral growth front on SiO2 masks in the course of LEO. It was also found that the elastic stiffness constants C13 and C44, are more sensitive to the residual strain than the optical phonon frequencies. The high frequency and static dielectric constants were found to be 5.14 and 9.04. The Born and Callen effective charges were found to be 2.56 and 0.50.

  11. Epitaxial lateral overgrowth of (112xAF2) semipolar GaN on (11xAF00) m-plane sapphire by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ni, X.; Özgür, Ü.; Baski, A. A.; Morkoç, H.; Zhou, Lin; Smith, David J.; Tran, C. A.

    2007-04-01

    The authors report the growth of semipolar (112¯2) GaN films on nominally on-axis (101¯0) m-plane sapphire substrates using metal organic chemical vapor deposition. High-resolution x-ray diffraction (XRD) results indicate a preferred (112¯2) GaN orientation. Moreover, epitaxial lateral overgrowth (ELO) of GaN was carried out on the (112¯2) oriented GaN templates. When the ELO stripes were aligned along [11accent="true">2¯0]sapphire, the Ga-polar wings were inclined by 32° with respect to the substrate plane with smooth extended nonpolar a-plane GaN surfaces and polar c-plane GaN growth fronts. When compared with the template, the on-axis and off-axis XRD rocking curves indicated significant improvement in the crystalline quality by ELO for this mask orientation (on-axis 1700arcsec for the template, 380arcsec for the ELO sample, when rocked toward the GaN m axis), as verified by transmission electron microscopy (TEM). For growth mask stripes aligned along [0001]sapphire with GaN m-plane as growth fronts, the surface was composed of two {101¯1} planes making a 26° angle with the substrate plane. For this mask orientation XRD and TEM showed no improvement in the crystalline quality by ELO when compared to the non-ELO template.

  12. Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation

    NASA Astrophysics Data System (ADS)

    Ancona, M. G.; Binari, S. C.; Meyer, D. J.

    2012-04-01

    A fully coupled multi-dimensional continuum model of the thermoelectromechanics of GaN HEMTs is presented and discussed. The governing equations are those of linear thermoelectroelasticity, diffusion-drift transport theory, and heat conduction, with full coupling assumed, i.e., all mechanical, electrical, and thermal variables are solved for simultaneously. Apart from the known strains induced by epitaxy, plane-strain conditions are assumed, so that two-dimensional simulation suffices. Important aspects of the model are that it incorporates "actual" device geometries and that it captures field/stress concentrations that often occur near material discontinuities and especially at corners. The latter are shown to be especially important with regards to understanding the mechanisms of both electrical and mechanical degradation in GaN HEMTs. Various possible contributors to degradation are discussed, including electron injection, the inverse piezoelectric effect, thermal stress, SiN intrinsic stress, and device geometry. The possibilities of crack propagation and fracture of the AlGaN are also analyzed.

  13. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    SciTech Connect

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U.; Bergsten, J.; Rorsman, N.

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  14. Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations

    NASA Astrophysics Data System (ADS)

    Gai, Yanqin; Li, Jingbo; Hou, Qifeng; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Li, Jinmin

    2009-08-01

    Thermally stimulated luminescence spectroscopy has been applied to study the deep centres in unintentionally doped high resistivity GaN epilayers grown by the metal organic chemical vapour deposition method on c-sapphire substrates. Two trap states with activation energies of 0.12 and 0.62 eV are evaluated from two luminescence peaks at 141.9 and 294.7 K in the luminescence curve. Our spectroscopy measurement, in combination with more accurate first-principles studies, provided insights into the microscopic origin of these levels. Our investigations suggest that the lower level at 0.12 eV might originate from CN, which behaves as a hole trap state; the deeper level at 0.62 eV can be correlated with VGa that corresponds to the yellow luminescence band observed in low-temperature photoluminescence spectra.

  15. Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys

    NASA Astrophysics Data System (ADS)

    Sarney, W. L.; Svensson, S. P.; Novikov, S. V.; Yu, K. M.; Walukiewicz, W.; Ting, M.; Foxon, C. T.

    2015-09-01

    Highly mismatched GaN1-xSbx alloys were grown under N-rich conditions at low substrate temperatures (325-550 °C) at a growth rates of ~0.09 μm/hr on sapphire. The alloys ranged in Sb composition from 0% to 16%, with the bandgap shifting from 3.3 to 1.6 eV in accordance with the band anticrossing (BAC) model. We compare these results to growths from another chamber, having a different N source, and using a faster growth rate (~0.24 μm/hr), much lower substrate temperatures (as low as 80 °C), different III/V ratios and absolute fluxes. Despite the range of morphologies obtained, all alloys follow the predictions of the BAC model with the bandgap only depending on the Sb composition.

  16. Semi-polar GaN materials technology for high IQE green LEDs.

    SciTech Connect

    Koleske, Daniel David; Lee, Stephen Roger; Crawford, Mary Hagerott; Coltrin, Michael Elliott; Fini, Paul

    2013-06-01

    The goal of this NETL funded program was to improve the IQE in green (and longer wavelength) nitride- based LEDs structures by using semi-polar GaN planar orientations for InGaN multiple quantum well (MQW) growth. These semi-polar orientations have the advantage of significantly reducing the piezoelectric fields that distort the QW band structure and decrease electron-hole overlap. In addition, semipolar surfaces potentially provide a more open surface bonding environment for indium incorporation, thus enabling higher indium concentrations in the InGaN MQW. The goal of the proposed work was to select the optimal semi-polar orientation and explore wafer miscuts around this orientation that produced the highest quantum efficiency LEDs. At the end of this program we had hoped to have MQWs active regions at 540 nm with an IQE of 50% and an EQE of 40%, which would be approximately twice the estimated current state-of-the-art.

  17. Metal organic vapour phase epitaxy of GaN and lateral overgrowth

    NASA Astrophysics Data System (ADS)

    Gibart, Pierre

    2004-05-01

    boundaries are defective. ELO technology produces high quality GaN, with TD densities in the mid 106 cm-2, line widths of the low temperature photoluminescence near band gap recombination peaks below 1 meV, and deep electron trap concentration below 1014 cm-3 (compared with mid 1015 cm-3 in standard GaN). Numerous modifications of the ELO process have been proposed either to avoid technological steps (maskless ELO) or to improve it (pendeoepitaxy, PE). To further reduce the TD density, multiple-step-ELO and pendeo have also been implemented. However, even ELO quality GaN is not good enough for the next generation of LDs. ELO samples do not yet offer a full surface suitable for laser technology. What is needed for LDs with at least 30 mW output power is high quality freestanding GaN with TDs close to or even below 106 cm-2. To reach this crystalline perfection, elaborate technologies are currently being implemented. They, at some stage, involve TD reduction mechanisms occurring in the ELO process. Self-supported GaN with at least ELO quality at an affordable cost is believed to be the next breakthrough in GaN technology.

  18. Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N2 plasma prior to SiN passivation

    NASA Astrophysics Data System (ADS)

    Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Yeop Majlis, Burhanuddin; Biswas, Dhrubes; Chang, Edward Yi

    2016-01-01

    An effective surface cleaning technique is demonstrated for the GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) passivation process. In this study, dilute HF solution and in situ N2 plasma treatments were adopted to remove the native oxide and recover the nitrogen-vacancy defects at the GaN surface before device passivation. To investigate the correlation between the properties of the SiN/GaN interface and the device performance, the GaN MIS-HEMTs were characterized using current-voltage (I-V) measurement, capacitance-voltage (C-V) measurement, and X-ray photoelectron spectroscopy (XPS) analysis. With the application of this surface treatment technique, the device exhibits improved I-V characteristics with low leakage current, low dynamic ON-resistance, and good C-V response with a steep slope. Overall, the results reveal that the oxide-related bonds and nitrogen-vacancy defects at the SiN/GaN interface are the root cause of the GaN MIS-HEMTs performance degradation.

  19. Toward the realization of erbium-doped GaN bulk crystals as a gain medium for high energy lasers

    NASA Astrophysics Data System (ADS)

    Sun, Z. Y.; Li, J.; Zhao, W. P.; Lin, J. Y.; Jiang, H. X.

    2016-08-01

    Er-doped GaN (Er:GaN) is a promising candidate as a gain medium for solid-state high energy lasers (HELs) at the technologically important and eye-safe 1.54 μm wavelength window, as GaN has superior thermal properties over traditional laser gain materials such as Nd:YAG. However, the attainment of wafer-scale Er:GaN bulk or quasi-bulk crystals is a prerequisite to realize the full potential of Er:GaN as a gain medium for HELs. We report the realization of freestanding Er:GaN wafers of 2-in. in diameter with a thickness on the millimeter scale. These freestanding wafers were obtained via growth by hydride vapor phase epitaxy in conjunction with a laser-lift-off process. An Er doping level of 1.4 × 1020 atoms/cm3 has been confirmed by secondary ion mass spectrometry measurements. The freestanding Er:GaN wafers exhibit strong photoluminescent emission at 1.54 μm with its emission intensity increasing dramatically with wafer thickness under 980 nm resonant excitation. A low thermal quenching of 10% was measured for the 1.54 μm emission intensity between 10 K and 300 K. This work represents a significant step in providing a practical approach for producing Er:GaN materials with sufficient thicknesses and dimensions to enable the design of gain media in various geometries, allowing for the production of HELs with improved lasing efficiency, atmosphere transmission, and eye-safety.

  20. Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Roul, Basanta; Krupanidhi, S. B.

    2014-11-01

    We hereby report the development of non-polar epi-GaN films of usable quality, on an m-plane sapphire. Generally, it is difficult to obtain high-quality nonpolar material due to the planar anisotropic nature of the growth mode. However, we could achieve good quality epi-GaN films by involving controlled steps of nitridation. GaN epilayers were grown on m-plane (10-10) sapphire substrates using plasma assisted molecular beam epitaxy. The films grown on the nitridated surface resulted in a nonpolar (10-10) orientation while without nitridation caused a semipolar (11-22) orientation. Room temperature photoluminescence study showed that nonpolar GaN films have higher value of compressive strain as compared to semipolar GaN films, which was further confirmed by room temperature Raman spectroscopy. The room temperature UV photodetection of both films was investigated by measuring the I-V characteristics under UV light illumination. UV photodetectors fabricated on nonpolar GaN showed better characteristics, including higher external quantum efficiency, compared to photodetectors fabricated on semipolar GaN. X-ray rocking curves confirmed better crystallinity of semipolar as compared to nonpolar GaN which resulted in faster transit response of the device.

  1. Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

    SciTech Connect

    Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Krupanidhi, S. B.; Roul, Basanta

    2014-11-28

    We hereby report the development of non-polar epi-GaN films of usable quality, on an m-plane sapphire. Generally, it is difficult to obtain high-quality nonpolar material due to the planar anisotropic nature of the growth mode. However, we could achieve good quality epi-GaN films by involving controlled steps of nitridation. GaN epilayers were grown on m-plane (10-10) sapphire substrates using plasma assisted molecular beam epitaxy. The films grown on the nitridated surface resulted in a nonpolar (10-10) orientation while without nitridation caused a semipolar (11-22) orientation. Room temperature photoluminescence study showed that nonpolar GaN films have higher value of compressive strain as compared to semipolar GaN films, which was further confirmed by room temperature Raman spectroscopy. The room temperature UV photodetection of both films was investigated by measuring the I-V characteristics under UV light illumination. UV photodetectors fabricated on nonpolar GaN showed better characteristics, including higher external quantum efficiency, compared to photodetectors fabricated on semipolar GaN. X-ray rocking curves confirmed better crystallinity of semipolar as compared to nonpolar GaN which resulted in faster transit response of the device.

  2. Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Lee, Fang-Wei; Ke, Wen-Cheng; Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo

    2016-07-01

    This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 108 cm-2 for GaN on bare sapphire to 4.9 × 108 cm-2 for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm2/Vs for GaN on bare sapphire to 199 cm2/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with a high crystalline quality.

  3. X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy

    NASA Astrophysics Data System (ADS)

    Park, Minseo; Maria, J.-P.; Cuomo, J. J.; Chang, Y. C.; Muth, J. F.; Kolbas, R. M.; Nemanich, R. J.; Carlson, E.; Bumgarner, J.

    2002-09-01

    Thick films of GaN were studied by x-ray diffraction and Raman spectroscopy. The GaN thick films were deposited on (0001) sapphire using ultrahigh-rate magnetron sputter epitaxy with typical growth rates as high as 10-60 mum/min. The width of the x-ray rocking curve from the (0002) reflection for the sample produced by this technique is approx300 arcsec, which is unprecedented for GaN produced by a sputtering-type process. Our recent sample shows an x-ray rocking curve width of 240 arcsec. Only allowed modes were observed in the polarized Raman spectra. The background free carrier concentration is lower than 3 x1016 cm-3. The phonon lifetime of the Raman E2)2 mode of the sputtered GaN was comparable to that of bulk single crystal GaN grown by sublimation. The quality of the film was uniform across the wafer. The film was thermally stable upon annealing in N2 ambient. The x-ray and Raman analyses revealed that the sputtered GaN films are of high crystalline quality.

  4. Comparison between structural properties of bulk GaN grown under high N pressure and GaN grown by other methods

    SciTech Connect

    Liliental-Weber, Z.; Jasinski, J.; Washburn, J.

    2002-07-31

    In this paper defects formed in GaN grown by different methods are reviewed. Formation of particular defects are often related to the crystallographic direction in which the crystals grow. For bulk crystals the highest growth rates are observed for directions perpendicular to the c-axis. Threading dislocations and nanopipes along the c-axis are not formed in these crystals, but polarity of the growth direction plays a role concerning defects that are formed and surface roughness. For growth of homoepitaxial layers, where growth is forced to take place in the c-direction threading dislocations are formed and their density is related to the purity of constituents used for growth and to substrate surface inhomogeneities. In heteroepitaxial layers two other factors: lattice mismatch and thermal expansion mismatch are related to the formation of dislocations. Doping of crystals can also lead to formation of defects characteristic for a specific dopant. This type of defects tends to be growth method independent but can depend on growth polarity.

  5. Comparison between structural properties of bulk GaN grown in liquid Ga under high N pressure and GaN grown by other methods

    NASA Astrophysics Data System (ADS)

    Liliental-Weber, Z.; Jasinski, J.; Washburn, J.

    2002-12-01

    In this paper defects formed in GaN grown by different methods are reviewed. Formation of particular defects are often related to the crystallographic direction in which the crystals grow. For bulk crystals the highest growth rates are observed for directions perpendicular to the c-axis. Threading dislocations and nanopipes along the c-axis are not formed in these crystals, but polarity of the growth direction plays a role concerning defects that are formed and surface roughness. For growth of homoepitaxial layers, where growth is forced to take place in the c-direction threading dislocations are formed and their density is related to the purity of constituents used for growth and to substrate surface inhomogeneities. In heteroepitaxial layers two other factors: lattice mismatch and thermal expansion mismatch are related to the formation of dislocations. Doping of crystals can also lead to the formation of defects characteristic for a specific dopant. This type of defects tends to be growth method independent but can depend on growth polarity.

  6. High-quality vertical light emitting diodes fabrication by mechanical lift-off technique

    NASA Astrophysics Data System (ADS)

    Tu, Po-Min; Hsu, Shih-Chieh; Chang, Chun-Yen

    2011-10-01

    We report the fabrication of mechanical lift-off high quality thin GaN with Hexagonal Inversed Pyramid (HIP) structures for vertical light emitting diodes (V-LEDs). The HIP structures were formed at the GaN/sapphire substrate interface under high temperature during KOH wet etching process. The average threading dislocation density (TDD) was estimated by transmission electron microscopy (TEM) and found the reduction from 2×109 to 1×108 cm-2. Raman spectroscopy analysis revealed that the compressive stress of GaN epilayer was effectively relieved in the thin-GaN LED with HIP structures. Finally, the mechanical lift-off process is claimed to be successful by using the HIP structures as a sacrificial layer during wafer bonding process.

  7. Single-pass UV generation at 222.5 nm based on high-power GaN external cavity diode laser.

    PubMed

    Ruhnke, N; Müller, A; Eppich, B; Güther, R; Maiwald, M; Sumpf, B; Erbert, G; Tränkle, G

    2015-05-01

    We demonstrate a compact system for single-pass frequency doubling of high-power GaN diode laser radiation. The deep UV laser light at 222.5 nm is generated in a β-BaB2O4 (BBO) crystal. A high-power GaN external cavity diode laser (ECDL) system in Littrow configuration with narrowband emission at 445 nm is used as pump source. At a pump power of 680 mW, a maximum UV power of 16 μW in continuous-wave operation at 222.5 nm is achieved. This concept enables a compact diode laser-based system emitting in the deep ultraviolet spectral range. PMID:25927802

  8. Design of an Ultra-Efficient GaN High Power Amplifier for Radar Front-Ends Using Active Harmonic Load-Pull

    NASA Technical Reports Server (NTRS)

    Thrivikraman, Tushar; Hoffman, James

    2012-01-01

    This work presents a new measurement technique, mixed-signal active harmonic load-pull (MSALP) developed by Anterverta-mw in partnership with Maury Microwave, that allows for wide-band ultra-high efficiency amplifiers to be designed using GaN technology. An overview of the theory behind active load-pull is presented and why load-pull is important for high-power device characterization. In addition, an example procedure is presented that outlines a methodology for amplifier design using this measurement system. Lastly, measured results of a 10W GaN amplifier are presented. This work aims to highlight the benefit of using this sophisticated measurement systems for to optimize amplifier design for real radar waveforms that in turn will simplify implementation of space-based radar systems

  9. Investigations of atomic configurations of 60° basal dislocations in wurtzite GaN film by high-resolution transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Chang, Yunjie; Wang, Yumei; Deng, Zhen; Chen, Hong; Ge, Binghui

    2016-04-01

    GaN epitaxial films grown on Si (111) substrates were observed using a 200 kV high-resolution (HR) transmission electron microscope. Both perfect and dissociated 60° basal dislocations were found in ? HR images. By utilizing the image deconvolution method, the HR images were transformed into structure maps with an improved resolution, and then the atomic configurations of perfect and partial dislocations were determined. Afterwards, the possible dissociation schemes for the dissociated dislocations were derived.

  10. Experimental evidence of homonuclear bonds in amorphous GaN

    SciTech Connect

    Ishimaru, Dr. Manabu; Zhang, Yanwen; Wang, Xuemei; Chu, Wei-Kan; Weber, William J

    2011-01-01

    Although GaN is an important semiconductor material, its amorphous structures are not well understood. Currently, theoretical atomistic structural models which contradict each other, are proposed for the chemical short-range order of amorphous GaN: one characterizes amorphous GaN networks as highly chemically ordered, consisting of heteronuclear Ga-N atomic bonds; and the other predicts the existence of a large number of homonuclear bonds within the first coordination shell. In the present study, we examine amorphous structures of GaN via radial distribution functions obtained by electron diffraction techniques. The experimental results demonstrate that amorphous GaN networks consist of heterononuclear Ga-N bonds, as well as homonuclear Ga-Ga and N-N bonds.

  11. Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

    PubMed Central

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11–22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1–100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  12. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers

    NASA Astrophysics Data System (ADS)

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-02-01

    We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.

  13. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

    PubMed

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  14. Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

    PubMed

    Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

    2016-02-01

    We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2. PMID:26674458

  15. Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer

    NASA Astrophysics Data System (ADS)

    Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

    2016-02-01

    We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

  16. Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

    NASA Astrophysics Data System (ADS)

    Wang, T.

    2016-09-01

    The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics.

  17. Strain in epitaxial Bi2Se3 grown on GaN and graphene substrates: A reflection high-energy electron diffraction study

    NASA Astrophysics Data System (ADS)

    Li, Bin; Guo, Xin; Ho, Wingkin; Xie, Maohai

    2015-08-01

    Topological insulator (TI) has been one of the focus research themes in condensed matter physics in recent years. Due to the relatively large energy bandgap, Bi2Se3 has been identified as one of the most promising three-dimensional TIs with application potentials. Epitaxial Bi2Se3 by molecular-beam epitaxy has been reported by many groups using different substrates. A common feature is that Bi2Se3 grows readily along the c-axis direction irrespective of the type and condition of the substrate. Because of the weak van deer Waals interaction between Bi2Se3 quintuple layers, the grown films are reported to be strain-free, taking the lattice constant of the bulk crystal. At the very initial stage of Bi2Se3 deposition, however, strain may still exist depending on the substrate. Strain may bring some drastic effects to the properties of the TIs and so achieving strained TIs can be of great fundamental interests as well as practical relevance. In this work, we employ reflection high-energy electron diffraction to follow the lattice constant evolution of Bi2Se3 during initial stage depositions on GaN and graphene, two very different substrates. We reveal that epitaxial Bi2Se3 is tensile strained on GaN but strain-free on graphene. Strain relaxation on GaN is gradual.

  18. Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas

    NASA Astrophysics Data System (ADS)

    Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Isemura, Masashi; Mori, Yusuke

    2015-06-01

    Growth of high-quality a-plane GaN layers was performed by reaction between Ga2O vapor and NH3 gas at a high temperature. Smooth a-plane GaN epitaxial layers were obtained on a-plane GaN seed substrates sliced from thick c-plane GaN crystals. Growth rate increased with increasing Ga2O partial pressure. An a-plane GaN layer with a growth rate of 48 µm/h was obtained. The X-ray rocking curve (XRC) measurement showed that the full widths at half maximum (FWHMs) of GaN(11\\bar{2}0) with the incident beam parallel and perpendicular to the [0001] direction were 29-43 and 29-42 arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurement revealed that oxygen concentration decreased at a high temperature. These results suggest that growth of a-GaN layers using Ga2O vapor and NH3 gas at a high temperature enables the generation of high-quality crystals.

  19. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    NASA Astrophysics Data System (ADS)

    Ravikiran, L.; Radhakrishnan, K.; Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S.; Ng, G. I.

    2015-06-01

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr4 beam equivalent pressure of 1.86 × 10-7 mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics.

  20. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    SciTech Connect

    Ravikiran, L.; Radhakrishnan, K. Ng, G. I.; Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S.

    2015-06-28

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr{sub 4} beam equivalent pressure of 1.86 × 10{sup −7} mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics.

  1. Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

    NASA Astrophysics Data System (ADS)

    Chen, Shuo-Wei; Li, Heng; Lu, Tien-Chang

    2016-04-01

    The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs) with ex-situ sputtered physical vapor deposition (PVD) aluminum nitride (AlN) nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.

  2. Self-assembled GaN nanowires on diamond.

    PubMed

    Schuster, Fabian; Furtmayr, Florian; Zamani, Reza; Magén, Cesar; Morante, Joan R; Arbiol, Jordi; Garrido, Jose A; Stutzmann, Martin

    2012-05-01

    We demonstrate the nucleation of self-assembled, epitaxial GaN nanowires (NWs) on (111) single-crystalline diamond without using a catalyst or buffer layer. The NWs show an excellent crystalline quality of the wurtzite crystal structure with m-plane faceting, a low defect density, and axial growth along the c-axis with N-face polarity, as shown by aberration corrected annular bright-field scanning transmission electron microscopy. X-ray diffraction confirms single domain growth with an in-plane epitaxial relationship of (10 ̅10)(GaN) [parallel] (01 ̅1)(Diamond) as well as some biaxial tensile strain induced by thermal expansion mismatch. In photoluminescence, a strong and sharp excitonic emission reveals excellent optical properties superior to state-of-the-art GaN NWs on silicon substrates. In combination with the high-quality diamond/NW interface, confirmed by high-resolution transmission electron microscopy measurements, these results underline the potential of p-type diamond/n-type nitride heterojunctions for efficient UV optoelectronic devices. PMID:22506554

  3. Petrogenesis and tectonic significance of Early Cretaceous high-Zr rhyolite in the Dazhou uranium district, Gan-Hang Belt, Southeast China

    NASA Astrophysics Data System (ADS)

    Yang, Shui-Yuan; Jiang, Shao-Yong; Zhao, Kui-Dong; Jiang, Yao-Hui

    2013-09-01

    Early Cretaceous felsic intrusions and volcanic rocks are widespread in the Gan-Hang Belt, SE China. In this study, we report a distinctive high-Zr rhyolite (802-1145 ppm Zr) from the Dazhou uranium district in the eastern Gan-Hang Belt. SHRIMP zircon U-Pb dating shows that the Dazhou rhyolite erupted at 127.3 ± 1.7 Ma. Geochemical data indicate A-type characteristics for the Dazhou rhyolite, such as high contents of alkali elements, high FeO3∗/MgO and high Ga/Al ratios, enrichment in some LILEs, HFSEs, and REEs, and depletion in Sr, Ba, P, and Ti. Compared to other A-type granitoids reported previously in the same belt, the Dazhou high-Zr rhyolite shows only a slight enrichment in other HFSE elements and LREE, but has similar whole-rock Nd and zircon Hf isotopic compositions to those A-type granitoids with relatively lower Zr concentrations, indicating that all these A-type rocks may have similar magma sources. Hence, the difference of Zr contents in these rocks is not due to their different source rocks. We found that zircon grains in the Dazhou high-Zr rhyolite are generally inheritance-poor, and the calculated zircon saturation temperatures are extremely high at ˜1000 °C. It is therefore suggested that the distinctive high-Zr characteristic of the Dazhou rhyolite was a result of high-temperature suppression of zircon crystallization by ambient mafic magmas correlative with the upwelling of the asthenospheric mantle. The fundamental difference in magma temperature and magmatic evolution mechanism between the Dazhou high-Zr rhyolite and other A-type granitoid suites in the eastern Gan-Hang Belt brought about their different Zr concentrations.

  4. Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Liu, Peichi; Jackson, Biyun; Sun, Tianshu; Huang, Shyh-Jer; Hsu, Hsiao-Chiu; Su, Yan-Kuin; Chang, Shoou-Jinn; Li, Lei; Li, Ding; Wang, Lei; Hu, XiaoDong; Xie, Y. H.

    2013-04-01

    A novel serpentine channel structure is used to mask the sapphire substrate for the epitaxial growth of dislocation-free GaN. Compared to the existing epitaxial lateral overgrowth methods, the main advantages of this novel technique are: (a) one-step epitaxial growth; (b) up to 4 times wider defect-free regions; and (c) the as-grown GaN film can be transferred easily to any type of substrate. TEM, etch pits and cathodoluminescence experiments are conducted to characterize the quality of as-grown GaN. The results show that the average etch-pit density in the yet-to-be-optimized GaN epi-layers is about 4 × 105 cm-2. The underlying physics of selective nucleation and growth is investigated using the finite element method (COMSOL). It is concluded that the proximity effect dominates the selective growth of GaN on the serpentine channel structure masked sapphire. This novel technique is a promising candidate for the growth of high quality III-nitride and the subsequent high-performance device fabrication including high brightness LED, laser diodes, and high-power, high-efficiency transistors.

  5. OMVPE growth of P-type GaN using solution Cp2Mg

    NASA Astrophysics Data System (ADS)

    Qi, Yundong; Musante, Charles; Lau, Kei May; Smith, Lesley; Odedra, Rajesh; Kanjolia, Ravi

    2001-11-01

    Bis(cyclopentadienyl)magnesium (Cp2Mg) is a common source for p-type doping in GaN and AlInGaP materials. It is a white crystalline solid with very low vapor pressure, leading to transport problems similar to solid trimethyindium (TMI). Some of these problems can be alleviated by a newly developed source-solution magnesocene, Cp2Mg, dissolved in a solvent that is essentially nonvolatile. In this paper, we report the growth and comparative results of Mg-doped GaN grown by OMVPE using solid and solution Cp2Mg. Using both sources, we optimized parameters to obtain high-quality GaN growth with hole concentrations up to 1 1018/cm3.

  6. Coaxial metal-oxide-semiconductor (MOS) Au/Ga2O3/GaN nanowires.

    PubMed

    Hsieh, Chin-Hua; Chang, Mu-Tung; Chien, Yu-Jen; Chou, Li-Jen; Chen, Lih-Juann; Chen, Chii-Dong

    2008-10-01

    Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO2 substrate at 800 degrees C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 degrees C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices. PMID:18778107

  7. Long-Lived, Coherent Acoustic Phonon Oscillations in GaN Single Crystals

    SciTech Connect

    Wu, S.; Geiser, P.; Jun, J.; Karpinski, J.; Park, J.-R.; Sobolewski, R.

    2006-01-31

    We report on coherent acoustic phonon (CAP) oscillations studied in high-quality bulk GaN single crystals with a two-color femtosecond optical pump-probe technique. Using a far-above-the-band gap ultraviolet excitation (~270 nm wavelength) and a near-infrared probe beam (~810 nm wavelength), the long-lived, CAP transients were observed within a 10 ns time-delay window between the pump and probe pulses, with a dispersionless (proportional to the probe-beam wave vector) frequency of ~45 GHz. The measured CAP attenuation corresponded directly to the absorption of the probe light in bulk GaN, indicating that the actual (intrinsic) phonon-wave attenuation in our crystals was significantly smaller than the measured 65.8 cm^-1 value. The velocity of the phonon propagation was equal to the velocity of sound in GaN.

  8. Self-induced growth of vertical GaN nanowires on silica

    NASA Astrophysics Data System (ADS)

    Kumaresan, V.; Largeau, L.; Oehler, F.; Zhang, H.; Mauguin, O.; Glas, F.; Gogneau, N.; Tchernycheva, M.; Harmand, J.-C.

    2016-04-01

    We study the self-induced growth of GaN nanowires on silica. Although the amorphous structure of this substrate offers no possibility of an epitaxial relationship, the nanowires are remarkably aligned with the substrate normal whereas, as expected, their in-plane orientation is random. Their structural and optical characteristics are compared to those of GaN nanowires grown on standard crystalline Si (111) substrates. The polarity inversion domains are much less frequent, if not totally absent, in the nanowires grown on silica, which we find to be N-polar. This work demonstrates that high-quality vertical GaN nanowires can be elaborated without resorting to bulk crystalline substrates.

  9. Self-induced growth of vertical GaN nanowires on silica.

    PubMed

    Kumaresan, V; Largeau, L; Oehler, F; Zhang, H; Mauguin, O; Glas, F; Gogneau, N; Tchernycheva, M; Harmand, J-C

    2016-04-01

    We study the self-induced growth of GaN nanowires on silica. Although the amorphous structure of this substrate offers no possibility of an epitaxial relationship, the nanowires are remarkably aligned with the substrate normal whereas, as expected, their in-plane orientation is random. Their structural and optical characteristics are compared to those of GaN nanowires grown on standard crystalline Si (111) substrates. The polarity inversion domains are much less frequent, if not totally absent, in the nanowires grown on silica, which we find to be N-polar. This work demonstrates that high-quality vertical GaN nanowires can be elaborated without resorting to bulk crystalline substrates. PMID:26895252

  10. Anharmonic phonon decay in cubic GaN

    NASA Astrophysics Data System (ADS)

    Cuscó, R.; Domènech-Amador, N.; Novikov, S.; Foxon, C. T.; Artús, L.

    2015-08-01

    We present a Raman-scattering study of optical phonons in zinc-blende (cubic) GaN for temperatures ranging from 80 to 750 K. The experiments were performed on high-quality, cubic GaN films grown by molecular-beam epitaxy on GaAs (001) substrates. The observed temperature dependence of the optical phonon frequencies and linewidths is analyzed in the framework of anharmonic decay theory, and possible decay channels are discussed in the light of density-functional-theory calculations. The longitudinal-optical (LO) mode relaxation is found to occur via asymmetric decay into acoustic phonons, with an appreciable contribution of higher-order processes. The transverse-optical mode linewidth shows a weak temperature dependence and its frequency downshift is primarily determined by the lattice thermal expansion. The LO phonon lifetime is derived from the observed Raman linewidth and an excellent agreement with previous theoretical predictions is found.

  11. Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire

    PubMed Central

    Jiang, Teng; Xu, Sheng-rui; Zhang, Jin-cheng; Xie, Yong; Hao, Yue

    2016-01-01

    Uncoalesced a-plane GaN epitaxial lateral overgrowth (ELO) structures have been synthesized along two mask stripe orientations on a-plane GaN template by MOCVD. The morphology of two ELO GaN structures is performed by Scanning electronic microscopy. The anisotropy of crystalline quality and stress are investigated by micro-Raman spectroscopy. According to the Raman mapping spectra, the variations on the intensity, peak shift and the full width at half maximum (FWHM) of GaN E2 (high) peak indicate that the crystalline quality improvement occurs in the window region of the GaN stripes along [0001], which is caused by the dislocations bending towards the sidewalls. Conversely, the wing regions have better quality with less stress as the dislocations propagated upwards when the GaN stripes are along []. Spatial cathodoluminescence mapping results further support the explanation for the different dislocation growth mechanisms in the ELO processes with two different mask stripe orientations. PMID:26821824

  12. Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire

    NASA Astrophysics Data System (ADS)

    Jiang, Teng; Xu, Sheng-Rui; Zhang, Jin-Cheng; Xie, Yong; Hao, Yue

    2016-01-01

    Uncoalesced a-plane GaN epitaxial lateral overgrowth (ELO) structures have been synthesized along two mask stripe orientations on a-plane GaN template by MOCVD. The morphology of two ELO GaN structures is performed by Scanning electronic microscopy. The anisotropy of crystalline quality and stress are investigated by micro-Raman spectroscopy. According to the Raman mapping spectra, the variations on the intensity, peak shift and the full width at half maximum (FWHM) of GaN E2 (high) peak indicate that the crystalline quality improvement occurs in the window region of the GaN stripes along [0001], which is caused by the dislocations bending towards the sidewalls. Conversely, the wing regions have better quality with less stress as the dislocations propagated upwards when the GaN stripes are along []. Spatial cathodoluminescence mapping results further support the explanation for the different dislocation growth mechanisms in the ELO processes with two different mask stripe orientations.

  13. Epitaxial MoS2/GaN structures to enable vertical 2D/3D semiconductor heterostructure devices

    NASA Astrophysics Data System (ADS)

    Ruzmetov, D.; Zhang, K.; Stan, G.; Kalanyan, B.; Eichfeld, S.; Burke, R.; Shah, P.; O'Regan, T.; Crowne, F.; Birdwell, A. G.; Robinson, J.; Davydov, A.; Ivanov, T.

    MoS2/GaN structures are investigated as a building block for vertical 2D/3D semiconductor heterostructure devices that utilize a 3D substrate (GaN) as an active component of the semiconductor device without the need of mechanical transfer of the 2D layer. Our CVD-grown monolayer MoS2 has been shown to be epitaxially aligned to the GaN lattice which is a pre-requisite for high quality 2D/3D interfaces desired for efficient vertical transport and large area growth. The MoS2 coverage is nearly 50 % including isolated triangles and monolayer islands. The GaN template is a double-layer grown by MOCVD on sapphire and allows for measurement of transport perpendicular to the 2D layer. Photoluminescence, Raman, XPS, Kelvin force probe microscopy, and SEM analysis identified high quality monolayer MoS2. The MoS2/GaN structures electrically conduct in the out-of-plane direction and across the van der Waals gap, as measured with conducting AFM (CAFM). The CAFM current maps and I-V characteristics are analyzed to estimate the MoS2/GaN contact resistivity to be less than 4 Ω-cm2 and current spreading in the MoS2 monolayer to be approx. 1 μm in diameter. Epitaxial MoS2/GaN heterostructures present a promising platform for the design of energy-efficient, high-speed vertical devices incorporating 2D layered materials with 3D semiconductors.

  14. Heteroepitaxial VO{sub 2} thin films on GaN: Structure and metal-insulator transition characteristics

    SciTech Connect

    Zhou You; Ramanathan, Shriram

    2012-10-01

    Monolithic integration of correlated oxide and nitride semiconductors may open up new opportunities in solid-state electronics and opto-electronics that combine desirable functional properties of both classes of materials. Here, we report on epitaxial growth and phase transition-related electrical properties of vanadium dioxide (VO{sub 2}) thin films on GaN epitaxial layers on c-sapphire. The epitaxial relation is determined to be (010){sub vo{sub 2}} parallel (0001){sub GaN} parallel (0001){sub A1{sub 2O{sub 3}}} and [100]{sub vo{sub 2}} parallel [1210]{sub GaN} parallel [0110]{sub A1{sub 2O{sub 3}}} from x-ray diffraction. VO{sub 2} heteroepitaxial growth and lattice mismatch are analyzed by comparing the GaN basal plane (0001) with the almost close packed corrugated oxygen plane in vanadium dioxide and an experimental stereographic projection describing the orientation relationship is established. X-ray photoelectron spectroscopy suggests a slightly oxygen rich composition at the surface, while Raman scattering measurements suggests that the quality of GaN layer is not significantly degraded by the high-temperature deposition of VO{sub 2}. Electrical characterization of VO{sub 2} films on GaN indicates that the resistance changes by about four orders of magnitude upon heating, similar to epitaxial VO{sub 2} films grown directly on c-sapphire. It is shown that the metal-insulator transition could also be voltage-triggered at room temperature and the transition threshold voltage scaling variation with temperature is analyzed in the framework of a current-driven Joule heating model. The ability to synthesize high quality correlated oxide films on GaN with sharp phase transition could enable new directions in semiconductor-photonic integrated devices.

  15. Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition

    PubMed Central

    2014-01-01

    The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN. PMID:25489282

  16. High-quality breast MRI.

    PubMed

    Hendrick, R Edward

    2014-05-01

    Breast magnetic resonance imaging (MRI) demands the competing factors of high spatial resolution, good temporal resolution, high signal-to-noise ratios, and complete bilateral breast coverage. Achieving these competing factors requires modern MRI equipment with high magnetic field strength and homogeneity, high maximum gradient strength with short rise times, dedicated multichannel bilateral breast coils with prone patient positioning, and 3D (volume) gradient-echo MRI pulse sequences with short TR, short TE, high spatial resolution, and reasonably short acquisition times. This article discusses the equipment and pulse sequences needed to achieve high-quality breast MRI and summarizes requirements of the ACR Breast MRI Accreditation Program. PMID:24792656

  17. Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

    NASA Astrophysics Data System (ADS)

    Monier, G.; Bideux, L.; Robert-Goumet, C.; Gruzza, B.; Petit, M.; Lábár, J. L.; Menyhárd, M.

    2012-07-01

    The benefits of using a low power glow discharge nitrogen plasma source to create high quality GaN layers on GaAs(001) surface are first highlighted. This uncommon type of plasma source has the particularity of working at a low power (3-10 W) and a low pressure (10- 1 Pa) which induce creation of a small quantity of active nitrogen species. We put in evidence that this distinctiveness allows the growth of a stoichiometric and As-free GaN ultra-thin film on a GaAs(001) substrate by the mean of the inter-diffusion of As and N atoms. XPS, EELS, AFM are used to monitor surface composition and structure changes and to estimate the GaN thickness. A near saturation of the nitride layer thickness versus plasma exposure time is found. Furthermore, the possibility to crystallize the amorphous GaN layer by an annealing at 620 °C in a cubic structure with a lattice parameter close to that of c-GaN is put in evidence by means of TEM and LEED measurements. These measurements also show the homogeneity of the GaN thickness. In addition, the passivating effect of the GaN ultra-thin film to protect the GaAs surface is proved with the monitoring by XPS of the surface oxidation during several days of air exposure.

  18. 450-nm GaN laser diode enables high-speed visible light communication with 9-Gbps QAM-OFDM.

    PubMed

    Chi, Yu-Chieh; Hsieh, Dan-Hua; Tsai, Cheng-Ting; Chen, Hsiang-Yu; Kuo, Hao-Chung; Lin, Gong-Ru

    2015-05-18

    A TO-38-can packaged Gallium nitride (GaN) blue laser diode (LD) based free-space visible light communication (VLC) with 64-quadrature amplitude modulation (QAM) and 32-subcarrier orthogonal frequency division multiplexing (OFDM) transmission at 9 Gbps is preliminarily demonstrated over a 5-m free-space link. The 3-dB analog modulation bandwidth of the TO-38-can packaged GaN blue LD biased at 65 mA and controlled at 25°C is only 900 MHz, which can be extended to 1.5 GHz for OFDM encoding after throughput intensity optimization. When delivering the 4-Gbps 16-QAM OFDM data within 1-GHz bandwidth, the error vector magnitude (EVM), signal-to-noise ratio (SNR) and bit-error-rate (BER) of the received data are observed as 8.4%, 22.4 dB and 3.5 × 10(-8), respectively. By increasing the encoded bandwidth to 1.5 GHz, the TO-38-can packaged GaN blue LD enlarges its transmission capacity to 6 Gbps but degrades its transmitted BER to 1.7 × 10(-3). The same transmission capacity of 6 Gbps can also be achieved with a BER of 1 × 10(-6) by encoding 64-QAM OFDM data within 1-GHz bandwidth. Using the 1.5-GHz full bandwidth of the TO-38-can packaged GaN blue LD provides the 64-QAM OFDM transmission up to 9 Gbps, which successfully delivers data with an EVM of 5.1%, an SNR of 22 dB and a BER of 3.6 × 10(-3) passed the forward error correction (FEC) criterion. PMID:26074558

  19. Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

    NASA Astrophysics Data System (ADS)

    El-Zammar, G.; Khalfaoui, W.; Oheix, T.; Yvon, A.; Collard, E.; Cayrel, F.; Alquier, D.

    2015-11-01

    Critical issues need to be overcome to produce high performance Schottky diodes on gallium nitride (GaN). To activate dopant, high temperature thermal treatments are required but damage GaN surface where hexagonal pits appear and prevent any device processing. In this paper, we investigated the efficiency of cap-layers on GaN during thermal treatments to avoid degradation. Aluminum nitride (AlN) and silicon oxide (SiOx) were grown on GaN by direct current reactive magnetron sputtering and plasma-enhanced chemical vapor deposition, respectively. AlN growth parameters were studied to understand their effect on the grown layers and their protection efficiency. Focused ion beam was used to measure AlN layer thickness. Crystalline quality and exact composition were verified using X-ray diffraction and energy dispersive X-ray spectroscopy. Two types of rapid thermal annealing at high temperatures were investigated. Surface roughness and pits density were evaluated using atomic force microscopy and scanning electron microscopy. Cap-layers wet etching was processed in H3PO4 at 120 °C for AlN and in HF (10%) for SiOx. This work reveals effective protection of GaN during thermal treatments at temperatures as high as 1150 °C. Low surface roughness was obtained. Furthermore, no hexagonal pit was observed on the surface.

  20. Characteristics of front-illuminated visible-blind UV photodetector based on GaN p-i-n photodiodes with high quantum efficiency

    NASA Astrophysics Data System (ADS)

    You, Da; Tang, Yingwen; Xu, Jintong; Gong, Haimei

    2006-02-01

    In this work, we reported the fabrication and characterization of an Al xGa 1-xN /GaN hetero-epitaxial front-illuminated visible-blind UV photodetector with very high external quantum efficiency. This device was grown on one side of polished sapphire substrate using a low-temperature AlN buffer layer created by three-pocket multi-wafer system metalorganic chemical vapor deposition (MOCVD) with a vertical reactor. This device consisted of a 2.5μm thick GaN n-layer, a 0.4μm thick GaN i-layer and Al 0.1Ga 0.9N "window layer", followed by a 10 nm GaN:Mg p+ contact layer. In order to investigate the effect of p- Al 0.1Ga 0.9N thickness on the characteristics of the photodetector, three samples only with different p-AlGaN thicknesses of 0.1μm and 0.15μm were fabricated. All of the device processing was completed using standard semiconductor processing techniques that included photolithography, metallization and etching. Compared the results of these three samples, the sample with 0.15μm thick p-AlGaN possesses the highest quantum efficiency and its zero-bias peak responsivity was found around 0.20A/W at 365 nm, corresponding to an external quantum efficiency of 85.6%. Moreover, this device exhibits a low dark current density of 3.16nA/cm2 at zero-bias.

  1. Strain in epitaxial Bi{sub 2}Se{sub 3} grown on GaN and graphene substrates: A reflection high-energy electron diffraction study

    SciTech Connect

    Li, Bin; Guo, Xin; Ho, Wingkin; Xie, Maohai

    2015-08-24

    Topological insulator (TI) has been one of the focus research themes in condensed matter physics in recent years. Due to the relatively large energy bandgap, Bi{sub 2}Se{sub 3} has been identified as one of the most promising three-dimensional TIs with application potentials. Epitaxial Bi{sub 2}Se{sub 3} by molecular-beam epitaxy has been reported by many groups using different substrates. A common feature is that Bi{sub 2}Se{sub 3} grows readily along the c-axis direction irrespective of the type and condition of the substrate. Because of the weak van der Waals interaction between Bi{sub 2}Se{sub 3} quintuple layers, the grown films are reported to be strain-free, taking the lattice constant of the bulk crystal. At the very initial stage of Bi{sub 2}Se{sub 3} deposition, however, strain may still exist depending on the substrate. Strain may bring some drastic effects to the properties of the TIs and so achieving strained TIs can be of great fundamental interests as well as practical relevance. In this work, we employ reflection high-energy electron diffraction to follow the lattice constant evolution of Bi{sub 2}Se{sub 3} during initial stage depositions on GaN and graphene, two very different substrates. We reveal that epitaxial Bi{sub 2}Se{sub 3} is tensile strained on GaN but strain-free on graphene. Strain relaxation on GaN is gradual.

  2. Study of GaP single crystal layers grown on GaN by MOCVD

    SciTech Connect

    Li, Shuti; Liu, Chao; Ye, Guoguang; Xiao, Guowei; Zhou, Yugang; Su, Jun; Fan, Guanghan; Zhang, Yong; Liang, Fubo; Zheng, Shuwen

    2011-11-15

    Highlights: {yields} We investigated the growth of GaP layers on GaN by MOCVD. {yields} A single crystal GaP layer could be grown on GaN. {yields} The V/III ratio played an important role to improve GaP layer quality. {yields} The GaP:Mg layer with hole concentration of 4.2 x 10{sup 18} cm{sup -3} was obtained. -- Abstract: The performance of GaN based devices could possibly be improved by utilizing the good p-type properties of GaP layer and it provides the possibility of the integration of InAlGaN and AlGaInP materials to produce new devices, if high quality GaP compounds can be grown on III-nitride compounds. In this paper, the growth of GaP layers on GaN by metalorganic chemical vapor deposition (MOCVD) has been investigated. The results show that the GaP low temperature buffer layer can provide a high density of nucleation sites for high temperature GaP growth. Using a 40 nm thick GaP buffer layer, a single crystal GaP layer, whose full-width at half-maximum of the (1 1 1) plane measured by double crystal X-ray diffraction is 580'', can be grown on GaN. The V/III ratio plays an important role in the GaP layer growth and an appropriate V/III ratio can improve the quality of GaP layer. The GaP:Mg layer with hole carrier concentration of 4.2 x 10{sup 18} cm{sup -3} has been obtained.

  3. MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density

    NASA Astrophysics Data System (ADS)

    Marini, Jonathan; Leathersich, Jeffrey; Mahaboob, Isra; Bulmer, John; Newman, Neil; (Shadi) Shahedipour-Sandvik, F.

    2016-05-01

    We report on the impact of growth conditions on surface hillock density of N-polar GaN grown on nominally on-axis (0001) sapphire substrate by metal organic chemical vapor deposition (MOCVD). Large reduction in hillock density was achieved by implementation of an optimized high temperature AlN nucleation layer and use of indium surfactant in GaN overgrowth. A reduction by more than a factor of five in hillock density from 1000 to 170 hillocks/cm-2 was achieved as a result. Crystal quality and surface morphology of the resultant GaN films were characterized by high resolution x-ray diffraction and atomic force microscopy and found to be relatively unaffected by the buffer conditions. It is also shown that the density of smaller surface features is unaffected by AlN buffer conditions.

  4. Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

    SciTech Connect

    Bengoechea-Encabo, A.; Albert, S.; Barbagini, F.; Sanchez-Garcia, M. A.; Calleja, E.; Trampert, A.

    2013-12-09

    The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11–22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

  5. Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

    SciTech Connect

    Kumar, Mahesh; Roul, Basanta; Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Misra, P.; Kukreja, L.M.; Sinha, Neeraj; Kalghatgi, A.T.; Krupanidhi, S.B.

    2010-11-15

    High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN film grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth.

  6. Compact deep UV laser system at 222.5 nm by single-pass frequency doubling of high-power GaN diode laser emission

    NASA Astrophysics Data System (ADS)

    Ruhnke, Norman; Müller, André; Eppich, Bernd; Güther, Reiner; Maiwald, Martin; Sumpf, Bernd; Erbert, Götz; Tränkle, Günther

    2016-03-01

    Deep ultraviolet (DUV) lasers emitting below 300 nm are of great interest for many applications, for instance in medical diagnostics or for detecting biological agents. Established DUV lasers, e.g. gas lasers or frequency quadrupled solid-state lasers, are relatively bulky and have high power consumptions. A compact and reliable laser diode based system emitting in the DUV could help to address applications in environments where a portable and robust light source with low power consumption is needed. In this work, a compact DUV laser system based on single-pass frequency doubling of highpower GaN diode laser emission is presented. A commercially available high-power GaN laser diode from OSRAM Opto Semiconductors serves as a pump source. The laser diode is spectrally stabilized in an external cavity diode laser (ECDL) setup in Littrow configuration. The ECDL system reaches a maximum optical output power of 700 mW, maintaining narrowband emission below 60 pm (FWHM) at 445 nm over the entire operating range. By direct single pass frequency doubling in a BBO crystal with a length of 7.5 mm a maximum DUV output power of 16 μW at a wavelength of 222.5 nm is generated. The presented concept enables compact and efficient diode laser based light sources emitting in the DUV spectral range that are potentially suitable for in situ applications where a small footprint and low power consumption is essential.

  7. The 310 340 nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer

    NASA Astrophysics Data System (ADS)

    Wang, T.; Lee, K. B.; Bai, J.; Parbrook, P. J.; Ranalli, F.; Wang, Q.; Airey, R. J.; Cullis, A. G.; Zhang, H. X.; Massoubre, D.; Gong, Z.; Watson, I. M.; Gu, E.; Dawson, M. D.

    2008-05-01

    Previously, we reported that a thin GaN interlayer approach has been developed for growth of 340 nm ultraviolet light emitting diodes (UV-LEDs) with significantly improved performance. In this paper, more recent results on the further development of UV-LEDs with shorter wavelengths are reported, and the limitation of the wavelength of the UV-LEDs that can be pushed to, while retaining high device performance using the approach has been investigated. Transmission electron microscopy and device-performance data, including electrical and optical characteristics, indicated that the thin GaN interlayer approach can be effectively employed for growth of UV-LEDs to an emission wavelength approaching at least 300 nm. The approach should be taken into account in growth of UV-LEDs on sapphire substrates, as it provides a simple but effective growth method to achieve UV-LEDs with high performance. This paper also reports that a micro-LED array using the UV-LED wafer has been successfully fabricated, offering versatile micro-structured UV light sources for a wide range of applications.

  8. Ammonothermal bulk GaN substrates for LEDs

    NASA Astrophysics Data System (ADS)

    Jiang, W.; Ehrentraut, D.; Kamber, D. S.; Downey, B. C.; Cook, J.; Grundmann, M.; Pakalapati, R. T.; Yoo, H.; D'Evelyn, M. P.

    2014-02-01

    Soraa has developed a novel ammonothermal approach for growth of high quality, true bulk GaN crystals at a greatly reduced cost. Soraa's patented approach, known as SCoRA (Scalable Compact Rapid Ammonothermal) utilizes internal heating to circumvent the material-property limitations of conventional ammonothermal reactors. The SCoRA reactor has capability for temperatures and pressures greater than 650 °C and 500 MPa, respectively, enabling higher growth rates than conventional ammonothermal techniques, yet is less expensive and more scalable than conventional autoclaves fabricated from nickel-based superalloys. SCoRA GaN growth has been performed on c-plane and m-plane seed crystals with diameters between 5 mm and 2" to thicknesses of 0.5-4 mm. The highest growth rates are greater than 40 μm/h and rates in the 10-30 μm/h range are routinely observed. These values are significantly larger than those achieved by conventional ammonothermal GaN growth and are sufficient for a cost-effective manufacturing process. Two-inch diameter, crack-free, free-standing, n-type bulk GaN crystals have been grown. The crystals have been characterized by a range of techniques, including x-ray diffraction rocking-curve (XRC) analysis, optical microscopy, cathodoluminescence (CL), optical spectroscopy, and capacitance-voltage measurements. The crystallinity of the grown crystals is very good, with FWHM values of 15-80 arc-sec and average dislocation densities below 5 x 105 cm-2.

  9. Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

    NASA Astrophysics Data System (ADS)

    Chai, Xu-Zhao; Zhou, Dong; Liu, Bin; Xie, Zi-Li; Han, Ping; Xiu, Xiang-Qian; Chen, Peng; Lu, Hai; Zhang, Rong; Zheng, You-Dou

    2015-09-01

    Not Available Supported by the National Basic Research Program of China under Grant Nos 2011CB301900, 2012CB619200 and 2012CB619304, the High-Technology Research and Development Program of China under Grant Nos 2014AA032605 and 2015AA033305, the National Natural Science Foundation of China under Grant Nos 60990311, 61274003, 61422401, 51461135002, 60936004, 61176063 and 61334009, the Natural Science Foundation of Jiangsu Province under Grant Nos BK2011010 and BK20141320, the Scientific Innovation Research of College Graduate in Jiangsu Province under Grant No CXLX12_0049, a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Solid State Lighting and Energy-saving Electronics Collaborative Innovation Center.

  10. High performance GaN based blue flip-chip light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Jin, G. M.; Choi, I. G.; Park, J. C.; Jeon, S. K.; Park, E. H.

    2015-09-01

    In this study, high performance nitride-based flip-chip (FC) light-emitting diodes (LEDs) using optimized distributed bragg reflector (DBR) were fabricated and compared with conventional FC-LED using silver (Ag) reflector. Most of FCLEDs are using the silver (Ag) as reflector due to its superior reflectance at visual spectrum region. However, A silver has detrimental problems such as electro-chemical migration and agglomerations, which resulting in reliability issues such as degradation of power drop, unstable operating voltage and leakage issues. Our DBR structure was designed to have 99% at whole visible spectrum range (400~750nm), which is higher reflectance than silver reflector (90~95%). Optical power is higher than higher than the Ag-LED up to 30% @ 500mA. As the current increases up to 1A, the gap slightly decreased. Reliability test results show stable optical power, operating voltage, and leakage maintenance.

  11. High speed GaN micro-light-emitting diode arrays for data communications

    NASA Astrophysics Data System (ADS)

    Watson, Scott; McKendry, Jonathan J. D.; Zhang, Shuailong; Massoubre, David; Rae, Bruce R.; Green, Richard P.; Gu, Erdan; Henderson, Robert K.; Kelly, A. E.; Dawson, Martin D.

    2012-10-01

    Micro light-emitting diode (micro-LED) arrays based on an AlInGaN structure have attracted much interest recently as light sources for data communications. Visible light communication (VLC), over free space or plastic optical fibre (POF), has become a very important technique in the role of data transmission. The micro-LEDs which are reported here contain pixels ranging in diameter from 14 to 84μm and can be driven directly using a high speed probe or via complementary metal-oxide semiconductor (CMOS) technology. The CMOS arrays allow for easy, computer control of individual pixels within arrays containing up to 16×16 elements. The micro-LEDs best suited for data transmission have peak emissions of 450nm or 520nm, however various other wavelengths across the visible spectrum can also be used. Optical modulation bandwidths of over 400MHz have been achieved as well as error-free (defined as an error rate of <1x10-10) data transmission using on-off keying (OOK) non-return-to-zero (NRZ) modulation at data rates of over 500Mbit/s over free space. Also, as a step towards a more practical multi-emitter data transmitter, the frequency response of a micro-LED integrated with CMOS circuitry was measured and found to be up to 185MHz. Despite the reduction in bandwidth compared to the bare measurements using a high speed probe, a good compromise is achieved from the additional control available to select each pixel. It has been shown that modulating more than one pixel simultaneously can increase the data rate. As work continues in this area, the aim will be to further increase the data transmission rate by modulating more pixels on a single device to transmit multiple parallel data channels simultaneously.

  12. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    NASA Astrophysics Data System (ADS)

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar

    2012-06-01

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 μm and 0.095 μm for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  13. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    SciTech Connect

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar

    2012-06-29

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  14. Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses

    SciTech Connect

    He, Yunlong; Wang, Chong Li, Xiangdong; Zhao, Shenglei; Mi, Minhan; Pei, Jiuqing; Zhang, Jincheng; Hao, Yue; Li, Peixian; Ma, Xiaohua

    2015-08-10

    This is the report on trap states in enhancement-mode AlGaN/GaN/AlGaN double heterostructures high electron mobility transistors by fluorine plasma treatment with different GaN channel layer thicknesses. Compared with the thick GaN channel layer sample, the thin one has smaller 2DEG concentration, lower electron mobility, lower saturation current, and lower peak transconductance, but it has a higher threshold voltage of 1.2 V. Deep level transient spectroscopy measurements are used to obtain the accurate capture cross section of trap states. By frequency dependent capacitance and conductance measurements, the trap state density of (1.98–2.56) × 10{sup 12 }cm{sup −2} eV{sup −1} is located at E{sub T} in a range of (0.37–0.44) eV in the thin sample, while the trap state density of (2.3–2.92) × 10{sup 12 }cm{sup −2} eV{sup −1} is located at E{sub T} in a range of (0.33–0.38) eV in the thick one. It indicates that the trap states in the thin sample are deeper than those in the thick one.

  15. Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses

    NASA Astrophysics Data System (ADS)

    He, Yunlong; Li, Peixian; Wang, Chong; Li, Xiangdong; Zhao, Shenglei; Mi, Minhan; Pei, Jiuqing; Zhang, Jincheng; Ma, Xiaohua; Hao, Yue

    2015-08-01

    This is the report on trap states in enhancement-mode AlGaN/GaN/AlGaN double heterostructures high electron mobility transistors by fluorine plasma treatment with different GaN channel layer thicknesses. Compared with the thick GaN channel layer sample, the thin one has smaller 2DEG concentration, lower electron mobility, lower saturation current, and lower peak transconductance, but it has a higher threshold voltage of 1.2 V. Deep level transient spectroscopy measurements are used to obtain the accurate capture cross section of trap states. By frequency dependent capacitance and conductance measurements, the trap state density of (1.98-2.56) × 1012 cm-2 eV-1 is located at ET in a range of (0.37-0.44) eV in the thin sample, while the trap state density of (2.3-2.92) × 1012 cm-2 eV-1 is located at ET in a range of (0.33-0.38) eV in the thick one. It indicates that the trap states in the thin sample are deeper than those in the thick one.

  16. Improved crystalline properties of laser molecular beam epitaxy grown SrTiO{sub 3} by rutile TiO{sub 2} layer on hexagonal GaN

    SciTech Connect

    Luo, W. B.; Zhu, J.; Chen, H.; Wang, X. P.; Zhang, Y.; Li, Y. R.

    2009-11-15

    Epitaxial SrTiO{sub 3} films were fabricated by laser molecular beam epitaxy on bare and TiO{sub 2} buffered GaN(0002), respectively. The whole deposition processes were in situ monitored by reflection high energy electron diffraction (RHEED). X-ray diffraction (XRD) was carried out to study the growth orientation and crystalline quality of STO films. The interfacial characters and epitaxial relationships were also investigated by high revolution transition electron microscope and selected area electron diffraction (SAED). According to the RHEED observation, the lowest epitaxy temperature of STO on TiO{sub 2} buffered GaN was decreased compared with the direct deposited one. The epitaxial relationship was (111)[110]STO//(0002)[1120]GaN in both cases as confirmed by RHEED, XRD, and SAED. The full width at half maximum of omega-scan and PHI-scan of STO on TiO{sub 2} buffered GaN was reduced compared with that deposited on bare GaN, indicating that epitaxial quality of STO film is improved by inserting TiO{sub 2} layer. In summary, the lattice mismatch was reduced by inserting rutile TiO{sub 2}. As a result, the crystalline temperature was reduced and enhanced epitaxial quality of STO thin film was obtained.

  17. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect

    Nandi, R. Mohan, S. Major, S. S.; Srinivasa, R. S.

    2014-04-24

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  18. Analysis of GaN high electron mobility transistor switching characteristics for high-power applications with HiSIM-GaN compact model

    NASA Astrophysics Data System (ADS)

    Mizoguchi, Takeshi; Naka, Toshiyuki; Tanimoto, Yuta; Okada, Yasuhiro; Saito, Wataru; Miura-Mattausch, Mitiko; Jürgen Mattausch, Hans

    2016-04-01

    This paper presents a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for GaN high electron mobility transistors (HEMTs)]. The developed model includes two specific features of GaN-HEMT to reproduce the power efficiency accurately. One is the two-dimensional electron gas induced at the heterojunction, which is modeled by considering the potential distribution across the junction including the trap density contribution. The second feature is the field plate, which is introduced to delocalize the electric-field peak that occurs at the electrode edge. Using HiSIM-GaN, device characteristics have been simulated. It is demonstrated that measured DC/AC characteristics are well reproduced with the developed model. The model has also been applied to analyze circuit characteristics of a boost converter. It is shown that the waveform is well reproduced by considering one half of the trap density extracted with measured DC characteristics due to the time constant of trap events. Furthermore, it is verified that the power efficiency as a function of the load current is predicted within an accuracy of 1%. Influence of the trap density and the field plate on circuit performances is also discussed.

  19. Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

    NASA Astrophysics Data System (ADS)

    Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

    2015-09-01

    We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch (~3.2%) and thermal expansion coefficient difference (~7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

  20. New approaches for calculating absolute surface energies of wurtzite (0001)/(000 1 ¯ ): A study of ZnO and GaN

    NASA Astrophysics Data System (ADS)

    Zhang, Jingzhao; Zhang, Yiou; Tse, Kinfai; Deng, Bei; Xu, Hu; Zhu, Junyi

    2016-05-01

    The accurate absolute surface energies of (0001)/(000 1 ¯ ) surfaces of wurtzite structures are crucial in determining the thin film growth mode of important energy materials. However, the surface energies still remain to be solved due to the intrinsic difficulty of calculating the dangling bond energy of asymmetrically bonded surface atoms. In this study, we used a pseudo-hydrogen passivation method to estimate the dangling bond energy and calculate the polar surfaces of ZnO and GaN. The calculations were based on the pseudo chemical potentials obtained from a set of tetrahedral clusters or simple pseudo-molecules, using density functional theory approaches. The surface energies of (0001)/(000 1 ¯ ) surfaces of wurtzite ZnO and GaN that we obtained showed relatively high self-consistencies. A wedge structure calculation with a new bottom surface passivation scheme of group-I and group-VII elements was also proposed and performed to show converged absolute surface energy of wurtzite ZnO polar surfaces, and these results were also compared with the above method. The calculated results generally show that the surface energies of GaN are higher than those of ZnO, suggesting that ZnO tends to wet the GaN substrate, while GaN is unlikely to wet ZnO. Therefore, it will be challenging to grow high quality GaN thin films on ZnO substrates; however, high quality ZnO thin film on GaN substrate would be possible. These calculations and comparisons may provide important insights into crystal growth of the above materials, thereby leading to significant performance enhancements in semiconductor devices.

  1. High power, high beam quality regenerative amplifier

    DOEpatents

    Hackel, Lloyd A.; Dane, Clifford B.

    1993-01-01

    A regenerative laser amplifier system generates high peak power and high energy per pulse output beams enabling generation of X-rays used in X-ray lithography for manufacturing integrated circuits. The laser amplifier includes a ring shaped optical path with a limited number of components including a polarizer, a passive 90 degree phase rotator, a plurality of mirrors, a relay telescope, and a gain medium, the components being placed close to the image plane of the relay telescope to reduce diffraction or phase perturbations in order to limit high peak intensity spiking. In the ring, the beam makes two passes through the gain medium for each transit of the optical path to increase the amplifier gain to loss ratio. A beam input into the ring makes two passes around the ring, is diverted into an SBS phase conjugator and proceeds out of the SBS phase conjugator back through the ring in an equal but opposite direction for two passes, further reducing phase perturbations. A master oscillator inputs the beam through an isolation cell (Faraday or Pockels) which transmits the beam into the ring without polarization rotation. The isolation cell rotates polarization only in beams proceeding out of the ring to direct the beams out of the amplifier. The diffraction limited quality of the input beam is preserved in the amplifier so that a high power output beam having nearly the same diffraction limited quality is produced.

  2. High power, high beam quality regenerative amplifier

    DOEpatents

    Hackel, L.A.; Dane, C.B.

    1993-08-24

    A regenerative laser amplifier system generates high peak power and high energy per pulse output beams enabling generation of X-rays used in X-ray lithography for manufacturing integrated circuits. The laser amplifier includes a ring shaped optical path with a limited number of components including a polarizer, a passive 90 degree phase rotator, a plurality of mirrors, a relay telescope, and a gain medium, the components being placed close to the image plane of the relay telescope to reduce diffraction or phase perturbations in order to limit high peak intensity spiking. In the ring, the beam makes two passes through the gain medium for each transit of the optical path to increase the amplifier gain to loss ratio. A beam input into the ring makes two passes around the ring, is diverted into an SBS phase conjugator and proceeds out of the SBS phase conjugator back through the ring in an equal but opposite direction for two passes, further reducing phase perturbations. A master oscillator inputs the beam through an isolation cell (Faraday or Pockels) which transmits the beam into the ring without polarization rotation. The isolation cell rotates polarization only in beams proceeding out of the ring to direct the beams out of the amplifier. The diffraction limited quality of the input beam is preserved in the amplifier so that a high power output beam having nearly the same diffraction limited quality is produced.

  3. Characterization of GaN nanowires grown on PSi, PZnO and PGaN on Si (111) substrates by thermal evaporation

    NASA Astrophysics Data System (ADS)

    Shekari, Leila; Hassan, Haslan Abu; Thahab, Sabah M.; Hassan, Zainuriah

    2012-06-01

    In this research, we used an easy and inexpensive method to synthesize highly crystalline GaN nanowires (NWs); on different substrates such as porous silicon (PSi), porous zinc oxide (PZnO) and porous gallium nitride (PGaN) on Si (111) wafer by thermal evaporation using commercial GaN powder without any catalyst. Micro structural studies by scanning electron microscopy and transmission electron microscope measurements reveal the role of different substrates in the morphology, nucleation and alignment of the GaN nanowires. The degree of alignment of the synthesized nanowires does not depend on the lattice mismatch between wires and their substrates. Further structural and optical characterizations were performed using high resolution X-ray diffraction and energy-dispersive X-ray spectroscopy. Results indicate that the nanowires are of single-crystal hexagonal GaN. The quality and density of grown GaN nanowires for different substrates are highly dependent on the lattice mismatch between the nanowires and their substrates and also on the size of the porosity of the substrates. Nanowires grown on PGaN have the best quality and highest density as compared to nanowires on other substrates. By using three kinds of porous substrates, we are able to study the increase in the alignment and density of the nanowires.

  4. Characterization of GaN nanowires grown on PSi, PZnO and PGaN on Si (111) substrates by thermal evaporation

    SciTech Connect

    Shekari, Leila; Hassan, Haslan Abu; Thahab, Sabah M.; Hassan, Zainuriah

    2012-06-20

    In this research, we used an easy and inexpensive method to synthesize highly crystalline GaN nanowires (NWs); on different substrates such as porous silicon (PSi), porous zinc oxide (PZnO) and porous gallium nitride (PGaN) on Si (111) wafer by thermal evaporation using commercial GaN powder without any catalyst. Micro structural studies by scanning electron microscopy and transmission electron microscope measurements reveal the role of different substrates in the morphology, nucleation and alignment of the GaN nanowires. The degree of alignment of the synthesized nanowires does not depend on the lattice mismatch between wires and their substrates. Further structural and optical characterizations were performed using high resolution X-ray diffraction and energy-dispersive X-ray spectroscopy. Results indicate that the nanowires are of single-crystal hexagonal GaN. The quality and density of grown GaN nanowires for different substrates are highly dependent on the lattice mismatch between the nanowires and their substrates and also on the size of the porosity of the substrates. Nanowires grown on PGaN have the best quality and highest density as compared to nanowires on other substrates. By using three kinds of porous substrates, we are able to study the increase in the alignment and density of the nanowires.

  5. Incorporation of Mg in Free-Standing HVPE GaN Substrates

    NASA Astrophysics Data System (ADS)

    Zvanut, M. E.; Dashdorj, J.; Freitas, J. A.; Glaser, E. R.; Willoughby, W. R.; Leach, J. H.; Udwary, K.

    2016-06-01

    Mg, the only effective p-type dopant for nitrides, is well studied in thin films due to the important role of the impurity in light-emitting diodes and high-power electronics. However, there are few reports of Mg in thick free-standing GaN substrates. Here, we demonstrate successful incorporation of Mg into GaN grown by hydride vapor-phase epitaxy (HVPE) using metallic Mg as the doping source. The concentration of Mg obtained from four separate growth runs ranged between 1016 cm-3 and 1019 cm-3. Raman spectroscopy and x-ray diffraction revealed that Mg did not induce stress or perturb the crystalline quality of the HVPE GaN substrates. Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopies were performed to investigate the types of point defects in the crystals. The near-band-edge excitonic and shallow donor-shallow acceptor radiative recombination processes involving shallow Mg acceptors were prominent in the PL spectrum of a sample doped to 3 × 1018 cm-3, while the EPR signal was also thought to represent a shallow Mg acceptor. Detection of this signal reflects minimization of nonuniform strain obtained in the thick free-standing HVPE GaN compared with heteroepitaxial thin films.

  6. Fine structure of the red luminescence band in undoped GaN

    SciTech Connect

    Reshchikov, M. A.; Usikov, A.; Helava, H.; Makarov, Yu.

    2014-01-20

    Many point defects in GaN responsible for broad photoluminescence (PL) bands remain unidentified. Their presence in thick GaN layers grown by hydride vapor phase epitaxy (HVPE) detrimentally affects the material quality and may hinder the use of GaN in high-power electronic devices. One of the main PL bands in HVPE-grown GaN is the red luminescence (RL) band with a maximum at 1.8 eV. We observed the fine structure of this band with a zero-phonon line (ZPL) at 2.36 eV, which may help to identify the related defect. The shift of the ZPL with excitation intensity and the temperature-related transformation of the RL band fine structure indicate that the RL band is caused by transitions from a shallow donor (at low temperature) or from the conduction band (above 50 K) to an unknown deep acceptor having an energy level 1.130 eV above the valence band.

  7. Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

    NASA Astrophysics Data System (ADS)

    Choudhary, B. S.; Singh, A.; Tanwar, S.; Tyagi, P. K.; Kumar, M. Senthil; Kushvaha, S. S.

    2016-04-01

    We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.

  8. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

    NASA Astrophysics Data System (ADS)

    Deen, David A.; Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C.; Gougousi, Theodosia; Evans, Keith R.

    2014-09-01

    A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5-6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm2/V s and sheet resistance of 130 Ω / □ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.

  9. Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Ťapajna, M.; Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Brunner, F.; Cho, E.-M.; Kuzmík, J.

    2013-06-01

    The trapping phenomena in GaN metal-oxide-semiconductor high-electron mobility transistor structures with 10 and 20-nm thick Al2O3 gate dielectric grown by metal-organic chemical vapor deposition were deeply investigated using comprehensive capacitance-voltage measurements. By controlling the interface traps population, substantial electron trapping in the dielectric bulk was identified. Separation between the trapping process and the interface traps emission allowed us to determine distribution of interface trap density in a wide energy range. Temperature dependence of the trapping process indicates thermionic field emission of electrons from the gate into traps with a sheet density of ~1013 cm-2, located a few nm below the gate.

  10. Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Ťapajna, M.; Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Brunner, F.; Cho, E.-M.; Kuzmík, J.

    2013-06-01

    The trapping phenomena in GaN metal-oxide-semiconductor high-electron mobility transistor structures with 10 and 20-nm thick Al2O3 gate dielectric grown by metal-organic chemical vapor deposition were deeply investigated using comprehensive capacitance-voltage measurements. By controlling the interface traps population, substantial electron trapping in the dielectric bulk was identified. Separation between the trapping process and the interface traps emission allowed us to determine distribution of interface trap density in a wide energy range. Temperature dependence of the trapping process indicates thermionic field emission of electrons from the gate into traps with a sheet density of ˜1013 cm-2, located a few nm below the gate.

  11. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

    SciTech Connect

    Deen, David A. Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C.; Gougousi, Theodosia; Evans, Keith R.

    2014-09-01

    A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm{sup 2}/V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.

  12. Suppression of plasma-induced damage on GaN etched by a Cl2 plasma at high temperatures

    NASA Astrophysics Data System (ADS)

    Liu, Zecheng; Pan, Jialin; Kako, Takashi; Ishikawa, Kenji; Takeda, Keigo; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru

    2015-06-01

    Plasma-induced damage (PID) during plasma-etching processes was suppressed by the application of Cl2 plasma etching at an optimal temperature of 400 °C, based on results of evaluations of photoluminescence (PL), stoichiometric composition, and surface roughness. The effects of ions, photons, and radicals on damage formation were separated from the effects of plasma using the pallet for plasma evaluation (PAPE) method. The PID was induced primarily by energetic ion bombardments at temperatures lower than 400 °C and decreased with increasing temperature. Irradiations by photons and radicals were enhanced to form the PID and to develop surface roughness at temperatures higher than 400 °C. Consequently, Cl2 plasma etching at 400 °C resulted optimally in low damage and a stoichiometric and smooth GaN surface.

  13. High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1-xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate

    NASA Astrophysics Data System (ADS)

    Chichibu, S. F.; Hazu, K.; Furusawa, K.; Ishikawa, Y.; Onuma, T.; Ohtomo, T.; Ikeda, H.; Fujito, K.

    2014-12-01

    Structural and optical qualities of half-a-μm-thick m-plane Al1-xInxN epilayers grown by metalorganic vapor phase epitaxy were remarkably improved via coherent growth on a low defect density m-plane freestanding GaN substrate prepared by hydride vapor phase epitaxy. All the epilayers unexceptionally suffer from uniaxial or biaxial anisotropic in-plane stress. However, full-width at half-maximum values of the x-ray ω-rocking curves were nearly unchanged as the underlayer values being 80 ˜ 150 arc sec for ( 10 1 ¯ 0 ) and ( 10 1 ¯ 2 ) diffractions with both ⟨ 0001 ⟩ and ⟨ 11 2 ¯ 0 ⟩ azimuths, as long as pseudomorphic structure was maintained. Such Al1-xInxN epilayers commonly exhibited a broad but predominant luminescence peak in ultraviolet (x ≤ 0.14) to green (x = 0.30) wavelengths. Its equivalent value of the internal quantum efficiency at room temperature was as high as 67% for x = 0.14 and 44% for x = 0.30. Because its high-energy cutoff commonly converged with the bandgap energy, the emission peak is assigned to originate from the extended near-band-edge states with strong carrier localization.

  14. Study of photoemission mechanism for varied doping GaN photocathode

    NASA Astrophysics Data System (ADS)

    Qiao, Jianliang; Xu, Yuan; Niu, Jun; Gao, Youtang; Chang, Benkang

    2015-10-01

    Negative electron affinity (NEA) GaN photocathode has many virtues, such as high quantum efficiency, low dark current, concentrated electrons energy distribution and angle distribution, adjustive threshold and so on. The quantum efficiency is an important parameter for the preparation and evaluation of NEA GaN photocathode. The varied doping GaN photocathode has the directional inside electric field within the material, so the higher quantum efficiency can be obtained. The varied doping NEA GaN photocathode has better photoemission performance. According to the photoemission theory of NEA GaN photocathode, the quantum efficiency formulas for uniform doping and varied doping NEA GaN photocathodes were given. In the certain condition, the quantum efficiency formula for varied doping GaN photocathode consists with the uniform doping. The activation experiment was finished for varied doping GaN photocathode. The cleaning method and technics for varied doping GaN photocathode were given in detail. To get an atom clean surface, the heat cleaning must be done after the chemical cleaning. Using the activation and evaluation system for NEA photocathode, the varied doping GaN photocathode was activated with Cs and O, and the photocurrent curve for varied doping GaN photocathode was gotten.

  15. Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

    NASA Astrophysics Data System (ADS)

    Zhang, Y.; Bai, J.; Hou, Y.; Smith, R. M.; Yu, X.; Gong, Y.; Wang, T.

    2016-02-01

    We demonstrate a great improvement in the crystal quality of our semi-polar (11-22) GaN overgrown on regularly arrayed micro-rod templates fabricated using a combination of industry-matched photolithography and dry-etching techniques. As a result of our micro-rod configuration specially designed, an intrinsic issue on the anisotropic growth rate which is a great challenge in conventional overgrowth technique for semi-polar GaN has been resolved. Transmission electron microscopy measurements show a different mechanism of defect reduction from conventional overgrowth techniques and also demonstrate major advantages of our approach. The dislocations existing in the GaN micro-rods are effectively blocked by both a SiO2 mask on the top of each GaN micro-rod and lateral growth along the c-direction, where the growth rate along the c-direction is faster than that along any other direction. Basal stacking faults (BSFs) are also effectively impeded, leading to a distribution of BSF-free regions periodically spaced by BSF regions along the [-1-123] direction, in which high and low BSF density areas further show a periodic distribution along the [1-100] direction. Furthermore, a defect reduction model is proposed for further improvement in the crystalline quality of overgrown (11-22) GaN on sapphire.

  16. Visible fiber lasers excited by GaN laser diodes

    NASA Astrophysics Data System (ADS)

    Fujimoto, Yasushi; Nakanishi, Jun; Yamada, Tsuyoshi; Ishii, Osamu; Yamazaki, Masaaki

    2013-07-01

    This paper describes and discusses visible fiber lasers that are excited by GaN laser diodes. One of the attractive points of visible light is that the human eye is sensitive to it between 400 and 700 nm, and therefore we can see applications in display technology. Of course, many other applications exist. First, we briefly review previously developed visible lasers in the gas, liquid, and solid-state phases and describe the history of primary solid-state visible laser research by focusing on rare-earth doped fluoride media, including glasses and crystals, to clarify the differences and the merits of primary solid-state visible lasers. We also demonstrate over 1 W operation of a Pr:WPFG fiber laser due to high-power GaN laser diodes and low-loss optical fibers (0.1 dB/m) made by waterproof fluoride glasses. This new optical fiber glass is based on an AlF3 system fluoride glass, and its waterproof property is much better than the well known fluoride glass of ZBLAN. The configuration of primary visible fiber lasers promises highly efficient, cost-effective, and simple laser systems and will realize visible lasers with photon beam quality and quantity, such as high-power CW or tunable laser systems, compact ultraviolet lasers, and low-cost ultra-short pulse laser systems. We believe that primary visible fiber lasers, especially those excited by GaN laser diodes, will be effective tools for creating the next generation of research and light sources.

  17. Inductively coupled plasma etching of GaN

    SciTech Connect

    Shul, R.J.; McClellan, G.B.; Casalnuovo, S.A.; Rieger, D.J.; Pearton, S.J.; Constantine, C.; Barratt, C.; Karlicek, R.F. Jr.; Tran, C.; Schurman, M.

    1996-08-01

    Inductively coupled plasma (ICP) etch rates for GaN are reported as a function of plasma pressure, plasma chemistry, rf power, and ICP power. Using a Cl{sub 2}/H{sub 2}/Ar plasma chemistry, GaN etch rates as high as 6875 A/min are reported. The GaN surface morphology remains smooth over a wide range of plasma conditions as quantified using atomic force microscopy. Several etch conditions yield highly anisotropic profiles with smooth sidewalls. These results have direct application to the fabrication of group-III nitride etched laser facets. {copyright} {ital 1996 American Institute of Physics.}

  18. Design of an Ultra-High Efficiency GaN High-Power Amplifier for SAR Remote Sensing

    NASA Technical Reports Server (NTRS)

    Thrivikraman, Tushar; Hoffman, James

    2013-01-01

    This work describes the development of a high-power amplifier for use with a remote sensing SAR system. The amplifier is intended to meet the requirements for the Sweep-SAR technique for use in the proposed DESDynI SAR instrument. In order to optimize the amplifier design, active load-pull technique is employed to provide harmonic tuning to provide efficiency improvements. In addition, some of the techniques to overcome the challenges of load-pulling high power devices are presented. The design amplifier was measured to have 49 dBm of output power with 75% PAE, which is suitable to meet the proposed system requirements.

  19. Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres

    PubMed Central

    Kim, Jonghak; Woo, Heeje; Joo, Kisu; Tae, Sungwon; Park, Jinsub; Moon, Daeyoung; Park, Sung Hyun; Jang, Junghwan; Cho, Yigil; Park, Jucheol; Yuh, Hwankuk; Lee, Gun-Do; Choi, In-Suk; Nanishi, Yasushi; Han, Heung Nam; Char, Kookheon; Yoon, Euijoon

    2013-01-01

    Light-emitting diodes (LEDs) become an attractive alternative to conventional light sources due to high efficiency and long lifetime. However, different material properties between GaN and sapphire cause several problems such as high defect density in GaN, serious wafer bowing, particularly in large-area wafers, and poor light extraction of GaN-based LEDs. Here, we suggest a new growth strategy for high efficiency LEDs by incorporating silica hollow nanospheres (S-HNS). In this strategy, S-HNSs were introduced as a monolayer on a sapphire substrate and the subsequent growth of GaN by metalorganic chemical vapor deposition results in improved crystal quality due to nano-scale lateral epitaxial overgrowth. Moreover, well-defined voids embedded at the GaN/sapphire interface help scatter lights effectively for improved light extraction, and reduce wafer bowing due to partial alleviation of compressive stress in GaN. The incorporation of S-HNS into LEDs is thus quite advantageous in achieving high efficiency LEDs for solid-state lighting. PMID:24220259

  20. Charge transfer in Fe-doped GaN: The role of the donor

    SciTech Connect

    Sunay, Ustun; Dashdorj, J.; Zvanut, M. E.; Harrison, J. G.; Leach, J. H.; Udwary, K.

    2014-02-21

    Several nitride-based device structures would benefit from the availability of high quality, large-area, freestanding semi-insulating GaN substrates. Due to the intrinsic n-type nature of GaN, however, the incorporation of compensating centers such as Fe is necessary to achieve the high resistivity required. We are using electron paramagnetic resonance (EPR) to explore charge transfer in 450 um thick GaN:Fe plates to understand the basic mechanisms related to compensation so that the material may be optimized for device applications. The results suggest that the simple model based on one shallow donor and a single Fe level is insufficient to describe compensation. Rather, the observation of the neutral donor and Fe3+ indicates that either the two species are spatially segregated or additional compensating and donor defects must be present.

  1. Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

    DOE PAGESBeta

    Novikov, S. V.; Ting, M.; Yu, K. M.; Sarney, W. L.; Martin, R. W.; Svensson, S. P.; Walukiewicz, W.; Foxon, C. T.

    2014-10-01

    In this paper we report our study on n-type Te doping of amorphous GaN1-xAsx layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN1-xAsx layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN1-xAsx layers has been determined.

  2. Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Novikov, S. V.; Ting, M.; Yu, K. M.; Sarney, W. L.; Martin, R. W.; Svensson, S. P.; Walukiewicz, W.; Foxon, C. T.

    2014-10-01

    In this paper we report our study on n-type Te doping of amorphous GaN1-xAsx layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN1-xAsx layers has been successfully achieved with a maximum Te concentration of 9×1020 cm-3. Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3×1019 cm-3 and mobilities of ~1 cm2/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN1-xAsx layers has been determined.

  3. Investigation on the structural properties of GaN films grown on La0.3Sr1.7AlTaO6 substrates

    NASA Astrophysics Data System (ADS)

    Wang, Wenliang; Zhou, Shizhong; Liu, Zuolian; Yang, Weijia; Lin, Yunhao; Qian, Huirong; Gao, Fangliang; Li, Guoqiang

    2014-04-01

    Gallium nitride (GaN) films with excellent structural, electrical and optical properties have been epitaxially grown on La0.3Sr1.7AlTaO6 (LSAT) (111) substrates by radio-frequency molecular beam epitaxy at low temperature. The GaN films grown at 500 °C exhibits high crystalline quality with the (0002) and (10-12) full width at half maximum of 0.056° and 0.071°. There is a maximum of 1.1-nm-thick interfacial layer existing between the as-grown GaN and LSAT (111) substrate, and the as-grown about 300-nm-thick GaN films are almost fully relaxed only with a 0.0094% in-plane tensile strain. Hall and photoluminescence (PL) measurements also reveal outstanding electrical and optical properties of the as-grown GaN films on LSAT. This achievement brings the prospect for achieving highly-efficient GaN-based optoelectronic devices on LSAT (111) substrates.

  4. Novel chemical-vapor deposition technique for the synthesis of high-quality single-crystal nanowires and nanotubes

    NASA Astrophysics Data System (ADS)

    He, Maoqi; Mohammad, S. Noor

    2006-02-01

    The strength and versatility of a chemical-vapor deposition technique for thin, long, uniform, single-crystal, good-quality nanowire growth, without the use of template, have been described. Remarkably, while the full width at half maximum of a high-quality GaN thin film is 4 meV, that of a GaN whisker is 9 meV, which confirms high quality of the grown whiskers and nanowires. The versatility of the method is reflected by its ability to produce II-VI and III-V binary, ternary, and even, for the first time, quaternary nanowires in a controlled manner. The same versatility enables the realization of both cubic and hexagonal phases of nanowires and nanotubes. Chemical-vapor deposition technique generally makes use of highly poisonous arsine and phosphine for the synthesis of As- and P-based films. The present one is free from this shortcoming; it can produce As- and P-based nanowires without the use of these poisonous gases. A notable feature of the method is that properties of nanowires thus synthesized depend strongly on their shape, size, and geometry, and that certain growth conditions can only lead to such shapes and sizes.

  5. GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges

    NASA Astrophysics Data System (ADS)

    Wu, Jie-Jun; Wang, Kun; Yu, Tong-Jun; Zhang, Guo-Yi

    2015-06-01

    After a brief review on the progresses in GaN substrates by ammonothermal method and Na-flux method and hydride vapor phase epitaxy (HVPE) technology, our research results of growing GaN thick layer by a gas flow-modulated HVPE, removing the GaN layer through an efficient self-separation process from sapphire substrate, and modifying the uniformity of multiple wafer growth are presented. The effects of surface morphology and defect behaviors on the GaN homo-epitaxial growth on free standing substrate are also discussed, and followed by the advances of LEDs on GaN substrates and prospects of their applications in solid state lighting. Project supported by the National High Technology Research and Development Program of China (Grant No. 2014AA032605), the National Key Basic Research and Development Program of China (Grant Nos. 2012CB619304 and 2011CB301904), and the National Natural Science Foundation of China (Grant Nos. 61376012, 61474003, and 61327801).

  6. Structural defects in bulk GaN

    NASA Astrophysics Data System (ADS)

    Liliental-Weber, Z.; dos Reis, R.; Mancuso, M.; Song, C. Y.; Grzegory, I.; Porowski, S.; Bockowski, M.

    2014-10-01

    Transmission Electron Microscopy (TEM) studies of undoped and Mg doped GaN layers grown on the HVPE substrates by High Nitrogen Pressure Solution (HNPS) with the multi-feed-seed (MFS) configuration are shown. The propagation of dislocations from the HVPE substrate to the layer is observed. Due to the interaction between these dislocations in the thick layers much lower density of these defects is observed in the upper part of the HNPS layers. Amorphous Ga precipitates with attached voids pointing toward the growth direction are observed in the undoped layer. This is similar to the presence of Ga precipitates in high-pressure platelets, however the shape of these precipitates is different. The Mg doped layers do not show Ga precipitates, but MgO rectangular precipitates are formed, decorating the dislocations. Results of TEM studies of HVPE layers grown on Ammonothermal substrates are also presented. These layers have superior crystal quality in comparison to the HNPS layers, as far as density of dislocation is concern. Occasionally some small inclusions can be found, but their chemical composition was not yet determined. It is expected that growth of the HNPS layers on these substrate will lead to large layer thickness obtained in a short time and with high crystal perfection needed in devices.

  7. Electron Spin Resonance in GaN Thin Film Doped with Fe

    NASA Astrophysics Data System (ADS)

    Kashiwagi, Takanari; Sonoda, Saki; Yashiro, Haruhiko; Ishihara, Yujiro; Usui, Akira; Akasaka, Youichi; Hagiwara, Masayuki

    2007-02-01

    High-quality and high-resistivity semiconducting substrates are needed to fabricate high-frequency devices such as high-mobility transistors based on gallium nitride (GaN). A GaN thin film doped with Fe ions becomes one of such high-resistivity substrates. To obtain microscopic information on the Fe ions in the GaN:Fe film, we have performed electron spin resonance (ESR) measurements using a conventional X-band apparatus and home made Q-band equipment. The observed ESR signals were analyzed with a spin Hamiltonian given by considering the local symmetry of the Ga site (C3v) and assuming that the Fe3+ ions (S=5/2) are substituted for Ga3+ ions. As a result, the angular dependence of the resonance fields and the temperature dependence of the signal intensities are reproduced very well by the calculations. Consequently, we confirmed that the Fe3+ ions occupy some of the Ga sites in the GaN thin film.

  8. Structural, Optical and Electrical Properties of n-type GaN on Si (111) Grown by RF-plasma assisted Molecular Beam Epitaxy

    SciTech Connect

    Chin, C. W.; Hassan, Z.; Yam, F. K.

    2008-05-20

    In this paper, we present the study of the structural, optical and electrical of n-type GaN grown on silicon (111) by RF plasma-assisted molecular beam epitaxy (RF-MBE). X-ray diffraction (XRD) measurement reveals that the GaN was epitaxially grown on silicon. For the photoluminescence (PL) measurement, a sharp and intense peak at 364.5 nm indicates that the sample is of high optical quality. Hall effect measurement shows that the film has a carrier concentration of 3.28x10{sup 19} cm{sup -3}. The surface of the n-type GaN was smooth and no any cracks and pits.

  9. Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    You, Shuo-Ting; Lo, Ikai; Tsai, Jenn-Kai; Shih, Cheng-Hung

    2015-12-01

    We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface ( 10 1 ¯ 0 ) by scanning transmission electron microscope, we found that the ZnGa2O4 compound was formed at the M-plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the M-plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality M-plane GaN epi-layers.

  10. Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN

    SciTech Connect

    Zhang, Z.; Farzana, E.; Sun, W. Y.; Arehart, A. R.; Ringel, S. A.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Kyle, E. C. H.; Speck, J. S.

    2015-10-21

    The impact of annealing of proton irradiation-induced defects in n-type GaN devices has been systematically investigated using deep level transient and optical spectroscopies. Moderate temperature annealing (>200–250 °C) causes significant reduction in the concentration of nearly all irradiation-induced traps. While the decreased concentration of previously identified N and Ga vacancy related levels at E{sub C} − 0.13 eV, 0.16 eV, and 2.50 eV generally followed a first-order reaction model with activation energies matching theoretical values for N{sub I} and V{sub Ga} diffusion, irradiation-induced traps at E{sub C} − 0.72 eV, 1.25 eV, and 3.28 eV all decrease in concentration in a gradual manner, suggesting a more complex reduction mechanism. Slight increases in concentration are observed for the N-vacancy related levels at E{sub C} − 0.20 eV and 0.25 eV, which may be due to the reconfiguration of other N-vacancy related defects. Finally, the observed reduction in concentrations of the states at E{sub C} − 1.25 and E{sub C} − 3.28 eV as a function of annealing temperature closely tracks the detailed recovery behavior of the background carrier concentration as a function of annealing temperature. As a result, it is suggested that these two levels are likely to be responsible for the underlying carrier compensation effect that causes the observation of carrier removal in proton-irradiated n-GaN.

  11. Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

    PubMed

    Heilmann, Martin; Munshi, A Mazid; Sarau, George; Göbelt, Manuela; Tessarek, Christian; Fauske, Vidar T; van Helvoort, Antonius T J; Yang, Jianfeng; Latzel, Michael; Hoffmann, Björn; Conibeer, Gavin; Weman, Helge; Christiansen, Silke

    2016-06-01

    The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts. PMID:27124605

  12. Influence of post-deposition annealing on interfacial properties between GaN and ZrO{sub 2} grown by atomic layer deposition

    SciTech Connect

    Ye, Gang; Wang, Hong Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Geok Ng, Serene Lay; Ji, Rong; Liu, Zhi Hong

    2014-10-13

    Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaO{sub x} layer of ZrO{sub 2} grown by atomic layer deposition (ALD) on GaN is studied. ZrO{sub 2} films were annealed in N{sub 2} atmospheres in temperature range of 300 °C to 700 °C and analyzed by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that Ga-O bond to Ga-N bond area ratio decreases in the samples annealed at temperatures lower than 500 °C, which could be attributed to the thinning of GaO{sub x} layer associated with low surface defect states due to “clean up” effect of ALD-ZrO{sub 2} on GaN. However, further increase in annealing temperature results in deterioration of interface quality, which is evidenced by increase in Ga-O bond to Ga-N bond area ratio and the reduction of Ga-N binding energy.

  13. Effect of annealing on M-plane GaN thin films grown by PAMBE on tilt-cut LAO substrate

    NASA Astrophysics Data System (ADS)

    Lin, Yu-Chiao; Lo, Ikai; Wang, Ying-Chieh; Tsai, Cheng-Da; Yang, Chen-Chi; You, Shuo-Ting; Chou, Ming-Chi; Department of Materials and Optoelectronic Science Collaboration

    2014-03-01

    The non-polar GaN thin film is a potential candidate for high-efficient photoelectric devices. In this work, we analyzed the characteristics of M-plane GaN thin films which were grown on tilt-cut LiAlO2 (LAO) substrate by plasma-assisted molecular beam epitaxy (PAMBE). A series of samples were grown with different N/Ga flux ratios. The crystal structure and optical property of GaN samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and photoluminescence (PL) measurements. The peak of 32.2o in the XRD measurement showed the [1100] oriented (M-plane) for the GaN samples. To improve the crystal quality, we performed the thermal treatment by rapid thermal annealing (RTA) system on these samples and analyzed the crystal structure, surface morphology and optical property of the samples after thermal treatment. The effect of annealing on the M-plane GaN thin films was under investigation. This project is supported by National Science council of Taiwan(101-2112-M-110-006-MY3).

  14. Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air

    NASA Astrophysics Data System (ADS)

    Zhao, Shirong; McFavilen, Heather; Wang, Shuo; Ponce, Fernando A.; Arena, Chantal; Goodnick, Stephen; Chowdhury, Srabanti

    2016-04-01

    We report on the temperature-dependent contact resistivity and high-temperature stability of the annealed Ni/Au ohmic contacts to p-type GaN in air. As the measure temperature increases from 25°C to 390°C, both the specific contact resistivity (ρ c) and sheet resistance (R sh) decrease by factors ˜10, contributing to the 10-fold increase in current at 390°C compared with that at 25°C. It was also observed that the ρ c was further reduced by 36%, i.e., from 2.2 × 10-3 Ω cm2 to 1.4 × 10-3 Ω cm2, during the 48-h high-temperature stability test at 450°C in air, showing excellent stability of the contacts. An increase in ρ c was observed after the contacts were subjected to 500°C in air. Higher temperature stress led to a significant increase in ρ c. The contacts show rectifying I-V characteristics after being subjected to 700°C for 1 h. The degradation mechanics were analyzed with the assistance of transmission electron microscopy and energy dispersive x-ray spectroscopy.

  15. Fabrication of bamboo-shaped GaN nanorods

    NASA Astrophysics Data System (ADS)

    Li, H.; Li, J. Y.; He, M.; Chen, X. L.; Zhang, Z.

    Bamboo-shaped GaN nanorods were formed through a simple sublimation method. They were characterized by means of X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The TEM image showed that the nanorods were bamboo-like. XRD, HRTEM and SAED patterns indicated that the nanorods were single-crystal wurtzite GaN.

  16. The study of in situ scanning tunnelling microscope characterization on GaN thin film grown by plasma assisted molecular beam epitaxy

    SciTech Connect

    Yang, R.; Krzyzewski, T.; Jones, T.

    2013-03-18

    The epitaxial growth of GaN by Plasma Assisted Molecular Beam Epitaxy was investigated by Scanning Tunnelling Microscope (STM). The GaN film was grown on initial GaN (0001) and monitored by in situ Reflection High Energy Electron Diffraction and STM during the growth. The STM characterization was carried out on different sub-films with increased thickness. The growth of GaN was achieved in 3D mode, and the hexagonal edge of GaN layers and growth gradient were observed. The final GaN was of Ga polarity and kept as (0001) orientation, without excess Ga adlayers or droplets formed on the surface.

  17. GaN: From three- to two-dimensional single-layer crystal and its multilayer van der Waals solids

    NASA Astrophysics Data System (ADS)

    Onen, A.; Kecik, D.; Durgun, E.; Ciraci, S.

    2016-02-01

    Three-dimensional (3D) GaN is a III-V compound semiconductor with potential optoelectronic applications. In this paper, starting from 3D GaN in wurtzite and zinc-blende structures, we investigated the mechanical, electronic, and optical properties of the 2D single-layer honeycomb structure of GaN (g -GaN ) and its bilayer, trilayer, and multilayer van der Waals solids using density-functional theory. Based on high-temperature ab initio molecular-dynamics calculations, we first showed that g -GaN can remain stable at high temperature. Then we performed a comparative study to reveal how the physical properties vary with dimensionality. While 3D GaN is a direct-band-gap semiconductor, g -GaN in two dimensions has a relatively wider indirect band gap. Moreover, 2D g -GaN displays a higher Poisson ratio and slightly less charge transfer from cation to anion. In two dimensions, the optical-absorption spectra of 3D crystalline phases are modified dramatically, and their absorption onset energy is blueshifted. We also showed that the physical properties predicted for freestanding g -GaN are preserved when g -GaN is grown on metallic as well as semiconducting substrates. In particular, 3D layered blue phosphorus, being nearly lattice-matched to g -GaN , is found to be an excellent substrate for growing g -GaN . Bilayer, trilayer, and van der Waals crystals can be constructed by a special stacking sequence of g -GaN , and they can display electronic and optical properties that can be controlled by the number of g -GaN layers. In particular, their fundamental band gap decreases and changes from indirect to direct with an increasing number of g -GaN layers.

  18. Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

    PubMed Central

    2014-01-01

    With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 108 cm-2. X-ray photoelectron spectroscopy (XPS) analysis demonstrates that the GaN QDs were formed without Ga droplets by thermal decomposition of GaN. PMID:25136276

  19. Thermodynamic theory of epitaxial alloys: first-principles mixed-basis cluster expansion of (In, Ga)N alloy film.

    PubMed

    Liu, Jefferson Zhe; Zunger, Alex

    2009-07-22

    Epitaxial growth of semiconductor alloys onto a fixed substrate has become the method of choice to make high quality crystals. In the coherent epitaxial growth, the lattice mismatch between the alloy film and the substrate induces a particular form of strain, adding a strain energy term into the free energy of the alloy system. Such epitaxial strain energy can alter the thermodynamics of the alloy, leading to a different phase diagram and different atomic microstructures. In this paper, we present a general-purpose mixed-basis cluster expansion method to describe the thermodynamics of an epitaxial alloy, where the formation energy of a structure is expressed in terms of pair and many-body interactions. With a finite number of first-principles calculation inputs, our method can predict the energies of various atomic structures with an accuracy comparable to that of first-principles calculations themselves. Epitaxial (In, Ga)N zinc-blende alloy grown on GaN(001) substrate is taken as an example to demonstrate the details of the method. Two (210) superlattice structures, (InN)(2)/(GaN)(2) (at x = 0.50) and (InN)(4)/(GaN)(1) (at x = 0.80), are identified as the ground state structures, in contrast to the phase-separation behavior of the bulk alloy. PMID:21828531

  20. Semipolar (202{sup ¯}1) GaN and InGaN quantum wells on sapphire substrates

    SciTech Connect

    Leung, Benjamin; Wang, Dili; Kuo, Yu-Sheng; Xiong, Kanglin; Song, Jie; Chen, Danti; Park, Sung Hyun; Han, Jung; Hong, Su Yeon; Choi, Joo Won

    2014-06-30

    Here, we demonstrate a process to produce planar semipolar (202{sup ¯}1) GaN templates on sapphire substrates. We obtain (202{sup ¯}1) oriented GaN by inclined c-plane sidewall growth from etched sapphire, resulting in single crystal material with on-axis x-ray diffraction linewidth below 200 arc sec. The surface, composed of (101{sup ¯}1) and (101{sup ¯}0) facets, is planarized by the chemical-mechanical polishing of full 2 in. wafers, with a final surface root mean square roughness of <0.5 nm. We then analyze facet formation and roughening mechanisms on the (202{sup ¯}1) surface and establish a growth condition in N{sub 2} carrier gas to maintain a planar surface for further device layer growth. Finally, the capability of these semipolar (202{sup ¯}1) GaN templates to produce high quality device structures is verified by the growth and characterization of InGaN/GaN multiple quantum well structures. It is expected that the methods shown here can enable the benefits of using semipolar orientations in a scalable and practical process and can be readily extended to achieve devices on surfaces using any orientation of semipolar GaN on sapphire.

  1. Thermodynamic theory of epitaxial alloys: first-principles mixed-basis cluster expansion of (In, Ga)N alloy film

    NASA Astrophysics Data System (ADS)

    Liu, Jefferson Zhe; Zunger, Alex

    2009-07-01

    Epitaxial growth of semiconductor alloys onto a fixed substrate has become the method of choice to make high quality crystals. In the coherent epitaxial growth, the lattice mismatch between the alloy film and the substrate induces a particular form of strain, adding a strain energy term into the free energy of the alloy system. Such epitaxial strain energy can alter the thermodynamics of the alloy, leading to a different phase diagram and different atomic microstructures. In this paper, we present a general-purpose mixed-basis cluster expansion method to describe the thermodynamics of an epitaxial alloy, where the formation energy of a structure is expressed in terms of pair and many-body interactions. With a finite number of first-principles calculation inputs, our method can predict the energies of various atomic structures with an accuracy comparable to that of first-principles calculations themselves. Epitaxial (In, Ga)N zinc-blende alloy grown on GaN(001) substrate is taken as an example to demonstrate the details of the method. Two (210) superlattice structures, (InN)2/(GaN)2 (at x = 0.50) and (InN)4/(GaN)1 (at x = 0.80), are identified as the ground state structures, in contrast to the phase-separation behavior of the bulk alloy.

  2. Defect reduction in (112_O) a-plane GaN by two-stage epitaxiallateral overgrowth

    SciTech Connect

    Ni, X.; Ozgur, U.; Fu, Y.; Biyikli, N.; Xie, J.; Baski, A.A.; Morkoc, H.; Liliental-Weber, Z.

    2006-10-20

    In the epitaxial lateral overgrowth (ELO) of (11{bar 2}0) a-plane GaN, the uneven growth rates of two opposing wings, Ga- and N-wings, makes the coalescence of two neighboring wings more difficult than that in c-plane GaN. We report a two-stage growth method to get uniformly coalesced epitaxial lateral overgrown a-plane GaN using metalorganic chemical vapor deposition (MOCVD) by employing relatively lower growth temperature in the first step followed by enhanced lateral growth in the second. Using this method, the height differences between Ga-polar and N-polar wings at the coalescence front could be reduced, thereby making the coalescence of two wings much easier. Transmission electron microscopy (TEM) showed that the threading dislocation density in the wing areas was 1.0x10{sup 8}cm{sup -2}, more than two orders of magnitude lower than that in the window areas (4.2x10{sup 10}cm{sup -2}). However, high density of basal stacking faults of 1.2x104 cm-1 was still observed in the wing areas as compared to c-plane GaN. Atomic force microscopy and photoluminescence measurements on the coalesced ELO a-GaN sample also indicated improved material quality.

  3. Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions

    NASA Astrophysics Data System (ADS)

    Sato, Taketomo; Kumazaki, Yusuke; Edamoto, Masaaki; Akazawa, Masamichi; Hashizume, Tamotsu

    2016-02-01

    The selective and low-damaged etching of p-type GaN or AlGaN layer is inevitable process for AlGaN/GaN high-power transistors. We have investigated an electrochemical etching of p-GaN layer grown on AlGaN/GaN heterostructures, consisting of an anodic oxidation of p-GaN surface and a subsequent dissolution of the resulting oxide. The p-GaN layer was electrochemically etched by following the pattern of the SiO2 film that acted as an etching mask. Etching depth was linearly controlled by cycle number of triangular waveform at a rate of 25 nm/cycle. The AFM, TEM and μ-AES results showed that the top p-GaN layer was completely removed after 5 cycles applied, and the etching reaction was automatically sopped on the AlGaN surface. I-V and C-V measurements revealed that no significant damages were induced in the AlGaN/GaN heterostructures.

  4. Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar InxGa1 -xN /GaN quantum wells

    NASA Astrophysics Data System (ADS)

    Mounir, Christian; Schwarz, Ulrich T.; Koslow, Ingrid L.; Kneissl, Michael; Wernicke, Tim; Schimpke, Tilman; Strassburg, Martin

    2016-06-01

    We investigate the influence of inhomogeneous broadening on the optical polarization properties of high-inclination semipolar and nonpolar InxGa1 -xN /GaN quantum wells. Different planar m-plane and (20 2 ¯1 ¯) samples were grown (including core-shell microrods) and have been characterized by excitation-dependent polarization-resolved confocal micro-photoluminescence. The measured degree of linear polarization (DLP) is compared to theoretical predictions obtained by Fermi-Dirac statistical filling of the electronic band structure calculated by the k .p envelope function method. We show that our measured DLP at room temperature, as well as values reported by other groups, are systematically higher than the theoretical predictions. We propose to solve this discrepancy between theory and experiment by introducing inhomogeneous broadening in our calculations. Considering indium content fluctuations and the localization lengths of electrons and holes, different effective broadenings are applied to different subsets of subbands. We thereby show that inhomogeneous broadening leads to an increase of the DLP at room temperature. Furthermore, the dependence of the optical properties on the excitation density is better reproduced. Looking at the DLP as a function of the temperature gives us insight into the thermalization dynamics of charge carriers.

  5. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

    NASA Astrophysics Data System (ADS)

    Rajan, Akhil; Rogers, David J.; Ton-That, Cuong; Zhu, Liangchen; Phillips, Matthew R.; Sundaram, Suresh; Gautier, Simon; Moudakir, Tarik; El-Gmili, Youssef; Ougazzaden, Abdallah; Sandana, Vinod E.; Teherani, Ferechteh H.; Bove, Philippe; Prior, Kevin A.; Djebbour, Zakaria; McClintock, Ryan; Razeghi, Manijeh

    2016-08-01

    Full 2 inch GaN epilayers were lifted off GaN and c-sapphire substrates by preferential chemical dissolution of sacrificial ZnO underlayers. Modification of the standard epitaxial lift-off (ELO) process by supporting the wax host with a glass substrate proved key in enabling full wafer scale-up. Scanning electron microscopy and x-ray diffraction confirmed that intact epitaxial GaN had been transferred to the glass host. Depth-resolved cathodoluminescence (CL) analysis of the bottom surface of the lifted-off GaN layer revealed strong near-band-edge (3.33 eV) emission indicating a superior optical quality for the GaN which was lifted off the GaN substrate. This modified ELO approach demonstrates that previous theories proposing that wax host curling was necessary to keep the ELO etch channel open do not apply to the GaN/ZnO system. The unprecedented full wafer transfer of epitaxial GaN to an alternative support by ELO offers the perspective of accelerating industrial adoption of the expensive GaN substrate through cost-reducing recycling.

  6. New CVD-based method for the growth of high-quality crystalline zinc oxide layers

    NASA Astrophysics Data System (ADS)

    Huber, Florian; Madel, Manfred; Reiser, Anton; Bauer, Sebastian; Thonke, Klaus

    2016-07-01

    High-quality zinc oxide (ZnO) layers were grown using a new chemical vapour deposition (CVD)-based low-cost growth method. The process is characterized by total simplicity, high growth rates, and cheap, less hazardous precursors. To produce elementary zinc vapour, methane (CH4) is used to reduce a ZnO powder. By re-oxidizing the zinc with pure oxygen, highly crystalline ZnO layers were grown on gallium nitride (GaN) layers and on sapphire substrates with an aluminum nitride (AlN) nucleation layer. Using simple CH4 as precursor has the big advantage of good controllability and the avoidance of highly toxic gases like nitrogen oxides. In photoluminescence (PL) measurements the samples show a strong near-band-edge emission and a sharp line width at 5 K. The good crystal quality has been confirmed in high resolution X-ray diffraction (HRXRD) measurements. This new growth method has great potential for industrial large-scale production of high-quality single crystal ZnO layers.

  7. Excellence through High-Quality Individualization.

    ERIC Educational Resources Information Center

    Burns, Richard W.; Klingstedt, Joe Lars

    1988-01-01

    Proposes a strategy employing challenge, functionalism, high-order learning, and originality to achieve high-quality individualization in course work. Asserts that individualized instruction better prepares students to solve problems, make decisions, and produce original ideas. (MM)

  8. Study of radiation detection properties of GaN pn diode

    NASA Astrophysics Data System (ADS)

    Sugiura, Mutsuhito; Kushimoto, Maki; Mitsunari, Tadashi; Yamashita, Kohei; Honda, Yoshio; Amano, Hiroshi; Inoue, Yoku; Mimura, Hidenori; Aoki, Toru; Nakano, Takayuki

    2016-05-01

    Recently, GaN, which has remarkable properties as a material for optical devices and high-power electron devices, has also attracted attention as a material for radiation detectors. We previously suggested the use of BGaN as a neutron detector material. However, the radiation detection characteristics of GaN itself are not yet adequately understood. For realizing a BGaN neutron detector, the understanding of the radiation detection characteristics of GaN, which is a base material of the neutron detector, is important. In this study, we evaluated the radiation detection characteristics of GaN. We performed I-V and energy spectrum measurements under alpha ray, gamma ray, and thermal neutron irradiations to characterize the radiation detection characteristics of a GaN diode. The obtained results indicate that GaN is an effective material for our proposed new BGaN-based neutron detector.

  9. Effect of photocatalytic oxidation technology on GaN CMP

    NASA Astrophysics Data System (ADS)

    Wang, Jie; Wang, Tongqing; Pan, Guoshun; Lu, Xinchun

    2016-01-01

    GaN is so hard and so chemically inert that it is difficult to obtain a high material removal rate (MRR) in the chemical mechanical polishing (CMP) process. This paper discusses the application of photocatalytic oxidation technology in GaN planarization. Three N-type semiconductor particles (TiO2, SnO2, and Fe2O3) are used as catalysts and added to the H2O2-SiO2-based slurry. By optical excitation, highly reactive photoinduced holes are produced on the surface of the particles, which can oxidize OH- and H2O absorbed on the surface of the catalysts; therefore, more OH* will be generated. As a result, GaN MRRs in an H2O2-SiO2-based polishing system combined with catalysts are improved significantly, especially when using TiO2, the MRR of which is 122 nm/h. The X-ray photoelectron spectroscopy (XPS) analysis shows the variation trend of chemical composition on the GaN surface after polishing, revealing the planarization process. Besides, the effect of pH on photocatalytic oxidation combined with TiO2 is analyzed deeply. Furthermore, the physical model of GaN CMP combined with photocatalytic oxidation technology is proposed to describe the removal mechanism of GaN.

  10. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

    NASA Astrophysics Data System (ADS)

    Puybaret, Renaud; Patriarche, Gilles; Jordan, Matthew B.; Sundaram, Suresh; El Gmili, Youssef; Salvestrini, Jean-Paul; Voss, Paul L.; de Heer, Walt A.; Berger, Claire; Ougazzaden, Abdallah

    2016-03-01

    We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5-8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

  11. Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes.

    PubMed

    Seo, Tae Hoon; Park, Ah Hyun; Park, Sungchan; Kim, Yong Hwan; Lee, Gun Hee; Kim, Myung Jong; Jeong, Mun Seok; Lee, Young Hee; Hahn, Yoon-Bong; Suh, Eun-Kyung

    2015-01-01

    We report the growth of high-quality GaN layer on single-walled carbon nanotubes (SWCNTs) and graphene hybrid structure (CGH) as intermediate layer between GaN and sapphire substrate by metal-organic chemical vapor deposition (MOCVD) and fabrication of light emitting diodes (LEDs) using them. The SWCNTs on graphene act as nucleation seeds, resulting in the formation of kink bonds along SWCNTs with the basal plane of the substrate. In the x-ray diffraction, Raman and photoluminescence spectra, high crystalline quality of GaN layer grown on CGH/sapphire was observed due to the reduced threading dislocation and efficient relaxation of residual compressive strain caused by lateral overgrowth process. When applied to the LED structure, the current-voltage characteristics and electroluminescence (EL) performance exhibit that blue LEDs fabricated on CGH/sapphire well-operate at high injection currents and uniformly emit over the whole emission area. We expect that CGH can be applied for the epitaxial growth of GaN on various substrates such as Si and MgO, which can be a great advantage in electrical and thermal properties of optical devices fabricated on them. PMID:25597492

  12. Infrared absorption of hydrogen-related defects in ammonothermal GaN

    NASA Astrophysics Data System (ADS)

    Suihkonen, Sami; Pimputkar, Siddha; Speck, James S.; Nakamura, Shuji

    2016-05-01

    Polarization controlled Fourier transform infrared (FTIR) absorption measurements were performed on a high quality m-plane ammonothermal GaN crystal grown using basic chemistry. The polarization dependence of characteristic absorption peaks of hydrogen-related defects at 3000-3500 cm-1 was used to identify and determine the bond orientation of hydrogenated defect complexes in the GaN lattice. Majority of hydrogen was found to be bonded in gallium vacancy complexes decorated with one to three hydrogen atoms (VGa-H1,2,3) but also hydrogenated oxygen defect complexes, hydrogen in bond-center sites, and lattice direction independent absorption were observed. Absorption peak intensity was used to determine a total hydrogenated VGa density of approximately 4 × 1018 cm-3, with main contribution from VGa-H1,2. Also, a significant concentration of electrically passive VGa-H3 was detected. The high density of hydrogenated defects is expected to have a strong effect on the structural, optical, and electrical properties of ammonothermal GaN crystals.

  13. Structural defects in GaN revealed by Transmission Electron Microscopy

    DOE PAGESBeta

    Liliental-Weber, Zuzanna

    2014-09-08

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  14. Structural defects in GaN revealed by Transmission Electron Microscopy

    SciTech Connect

    Liliental-Weber, Zuzanna

    2014-04-18

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  15. The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD

    NASA Astrophysics Data System (ADS)

    Liang, Jing; Hongling, Xiao; Xiaoliang, Wang; Cuimei, Wang; Qingwen, Deng; Zhidong, Li; Jieqin, Ding; Zhanguo, Wang; Xun, Hou

    2013-11-01

    GaN films are grown on cone-shaped patterned sapphire substrates (CPSSs) by metal-organic chemical vapor deposition, and the influence of the temperature during the middle stage of GaN growth on the threading dislocation (TD) density of GaN is investigated. High-resolution X-ray diffraction (XRD) and cathode-luminescence (CL) were used to characterize the GaN films. The XRD results showed that the edge-type dislocation density of GaN grown on CPSS is remarkably reduced compared to that of GaN grown on conventional sapphire substrates (CSSs). Furthermore, when the growth temperature in the middle stage of GaN grown on CPSS decreases, the full width at half maximum of the asymmetry (102) plane of GaN is reduced. This reduction is attributed to the enhancement of vertical growth in the middle stage with a more triangular-like shape and the bending of TDs. The CL intensity spatial mapping results also showed the superior optical properties of GaN grown on CPSS to those of GaN on CSS, and that the density of dark spots of GaN grown on CPSS induced by nonradiative recombination is reduced when the growth temperature in the middle stage decreases.

  16. Cathodoluminescence and depth profiling studies of unintentionally doped GaN films grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Tounsi, Nabil; Guermazi, Hajer; Guermazi, Samir; El Jani, Belgacem

    2015-10-01

    GaN layers are grown by metalorganic vapor phase epitaxy at 1050 °C on porous silicon and (111) oriented silicon substrates. AlN buffer layers of about 100 nm thickness were previously deposited on Si substrates. The effect of substrates on optical properties is revealed by Cathodoluminescence measurements (CL), recorded at room temperature and liquid nitrogen temperature. Various excitonic transitions are depicted. Spectral features associated with F°X energy around 3.4 eV and bound excitons (D°X and A°X in the range 3.29-3.35 eV) related to wurtzite GaN excitons are observed. Yellow band is located around 2.15 eV. CL depth profiling is also investigated at various e-beam energies (3-25 keV). The low-energy electron beam irradiation reveals an inhomogeneous distribution of point defects in depth, and high non-radiative recombination beyond a threshold energy. Good agreement between our experimental data and literature is obtained. Moreover, CL investigations prove that growth of GaN on (111) oriented Si substrate improve the crystalline quality of the layer.

  17. GaN directional couplers for integrated quantum photonics

    SciTech Connect

    Zhang Yanfeng; McKnight, Loyd; Watson, Ian M.; Gu, Erdan; Calvez, Stephane; Dawson, Martin D.; Engin, Erman; Cryan, Martin J.; Thompson, Mark G.; O'Brien, Jeremy L.

    2011-10-17

    Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip [C. K. Hong, et al., Phys. Rev. Lett. 59, 2044 (1987)] with 96% visibility.

  18. Thermo-piezo-electro-mechanical simulation of AlGaN (aluminum gallium nitride) / GaN (gallium nitride) High Electron Mobility Transistors

    NASA Astrophysics Data System (ADS)

    Stevens, Lorin E.

    Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researchers and scientists throughout the world who are pushing the limits of what modern electronic devices can do. The purpose of the research outlined in this paper was to better understand the mechanical stresses and strains that are present in a hybrid AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) HEMT, while under electrically-active conditions. One of the main issues currently being researched in these devices is their reliability, or their consistent ability to function properly, when subjected to high-power conditions. The researchers of this mechanical study have performed a static (i.e. frequency-independent) reliability analysis using powerful multiphysics computer modeling/simulation to get a better idea of what can cause failure in these devices. Because HEMT transistors are so small (micro/nano-sized), obtaining experimental measurements of stresses and strains during the active operation of these devices is extremely challenging. Physical mechanisms that cause stress/strain in these structures include thermo-structural phenomena due to mismatch in both coefficient of thermal expansion (CTE) and mechanical stiffness between different materials, as well as stress/strain caused by "piezoelectric" effects (i.e. mechanical deformation caused by an electric field, and conversely voltage induced by mechanical stress) in the AlGaN and GaN device portions (both

  19. Study of GaN doping with carbon from propane in a wide range of MOVPE conditions

    NASA Astrophysics Data System (ADS)

    Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Kazantsev, D. Yu.; Ber, B. Ya.; Yagovkina, M. A.; Brunkov, P. N.; Tsatsulnikov, A. F.

    2016-09-01

    Complex studies of intentional GaN carbon doping from propane during MOVPE were performed in a wide range of growth conditions. A strong dependence of carbon doping efficiency on growth rate and ammonia flow is revealed, while dependence of carbon doping efficiency on reactor pressure is small. Atomic force microscopy confirms the good quality of the GaN:C layers for doping levels as high as 2*1019 cm-3 grown with growth rate up to 45 μm/h. The dependence of carbon incorporation into GaN is proportional to the propane concentration to the power 3/2 in most growth regimes, but for very high growth rate a linear or sub-linear component of the dependence becomes prominent.

  20. Assuring quality in high-consequence engineering

    SciTech Connect

    Hoover, Marcey L.; Kolb, Rachel R.

    2014-03-01

    In high-consequence engineering organizations, such as Sandia, quality assurance may be heavily dependent on staff competency. Competency-dependent quality assurance models are at risk when the environment changes, as it has with increasing attrition rates, budget and schedule cuts, and competing program priorities. Risks in Sandia's competency-dependent culture can be mitigated through changes to hiring, training, and customer engagement approaches to manage people, partners, and products. Sandia's technical quality engineering organization has been able to mitigate corporate-level risks by driving changes that benefit all departments, and in doing so has assured Sandia's commitment to excellence in high-consequence engineering and national service.

  1. Effect of the duration of the growth process on the properties of GaN grown by the sublimation method

    SciTech Connect

    Wolfson, A. A.; Mokhov, E. N.

    2009-03-15

    Variation in the structural and morphological features and luminescent characteristics of thick epitaxial GaN layers grown by the sublimation sandwich method with the duration of the crystallization process has been studied. This was, in particular, done by means of scanning electron microscopy in the secondary-electron and color-cathodoluminescence modes. It was found that rather high-quality GaN layers with a thickness of up to 0.5 mm can be grown in a time of about 1.5 h, with their surface hardly exhibiting any luminescence in the visible spectral range. However, making the growth process longer in order to obtain thicker layers impairs the quality of a crystal being grown, which is accompanied by an increase in the intensity of cathodoluminescence from its surface layer in the visible (predominantly yellow) region of the spectrum. Reasons for the poorer quality of GaN layers in this case are discussed. It is suggested that, as the evaporation rate from the source decreases, the amount of active nitrogen near the growth surface becomes lower.

  2. Nanoheteroepitaxy of GaN on AlN/Si(111) nanorods fabricated by nanosphere lithography

    NASA Astrophysics Data System (ADS)

    Lee, Donghyun; Shin, In-Su; Jin, Lu; Kim, Donghyun; Park, Yongjo; Yoon, Euijoon

    2016-06-01

    Nanoheteroepitaxy (NHE) of GaN on an AlN/Si(111) nanorod structure was investigated by metal-organic chemical vapor deposition. Silica nanosphere lithography was employed to fabricate a periodic hexagonal nanorod array with a narrow gap of 30 nm between the nanorods. We were successful in obtaining a fully coalesced GaN film on the AlN/Si(111) nanorod structure. Transmission electron microscopy revealed that threading dislocation (TD) bending and termination by stacking faults occurred near the interface between GaN and the AlN/Si(111) nanorods, resulting in the reduction of TD density for the NHE GaN layer. The full width at half-maximum of the X-ray rocking curve for (102) plane of the NHE GaN was found to decrease down to 728 arcsec from 1005 arcsec for the GaN layer on a planar AlN/Si(111) substrate, indicating that the crystalline quality of the NHE GaN was improved. Also, micro-Raman measurement showed that tensile stress in the NHE GaN layer was reduced significantly as much as 70% by introducing air voids between the nanorods.

  3. TEM characterization of GaN nanowires

    SciTech Connect

    Liliental-Weber, Zuzanna; Gao, Y.H.; Bando, Y.

    2002-02-21

    Transmission electron microscopy was applied to study GaN nanowires grown on carbon nanotube surfaces by chemical reaction between Ga{sub 2}O and NH{sub 3} gas in a conventional furnace. These wires grew in two crystallographic directions, <2{und 11}0> and <01{und 1}0> (fast growth directions of GaN), in the form of whiskers covered by small elongated GaN platelets. The morphology of these platelets is similar to that observed during the growth of single crystals from a Ga melt at high temperatures under high nitrogen pressure. It is thought that growth of nanowires in two different crystallographic directions and the arrangement of the platelets to the central whisker may be influenced by the presence of Ga{sub 2}O{sub 3} (based on the observation of the energy dispersive x-ray spectra), the interplanar spacings in the wire, and the presence of defects on the interface between the central part of the nanowire and the platelets surrounding it.

  4. Opportunities and challenges in GaN metal organic chemical vapor deposition for electron devices

    NASA Astrophysics Data System (ADS)

    Matsumoto, Koh; Yamaoka, Yuya; Ubukata, Akinori; Arimura, Tadanobu; Piao, Guanxi; Yano, Yoshiki; Tokunaga, Hiroki; Tabuchi, Toshiya

    2016-05-01

    The current situation and next challenge in GaN metal organic chemical vapor deposition (MOCVD) for electron devices of both GaN on Si and GaN on GaN are presented. We have examined the possibility of increasing the growth rate of GaN on 200-mm-diameter Si by using a multiwafer production MOCVD machine, in which the vapor phase parasitic reaction is well controlled. The impact of a high-growth-rate strained-layer-superlattice (SLS) buffer layer is presented in terms of material properties. An SLS growth rate of as high as 3.46 µm/h, which was 73% higher than the current optimum, was demonstrated. As a result, comparable material properties were obtained. Next, a typical result of GaN doped with Si of 1 × 1016 cm‑3 grown at the growth rate of 3.7 µm/h is shown. For high-voltage application, we need a thick high-purity GaN drift layer with a low carbon concentration, of less than 1016 cm‑3. It is shown that achieving a high growth rate by precise control of the vapor phase reaction is still challenge in GaN MOCVD.

  5. Are high-quality mates always attractive?

    PubMed Central

    Holveck, Marie-Jeanne; Verhulst, Simon; Fawcett, Tim W

    2010-01-01

    Sexual selection theory posits that females should choose mates in a way that maximizes their reproductive success. But what exactly is the optimal choice? Most empirical research is based on the assumption that females seek a male of the highest possible quality (in terms of the genes or resources he can provide), and hence show directional preferences for indicators of male quality. This implies that attractiveness and quality should be highly correlated. However, females frequently differ in what they find attractive. New theoretical and empirical insights provide mounting evidence that a female’s own quality biases her judgement of male attractiveness, such that male quality and attractiveness do not always coincide. A recent experiment in songbirds demonstrated for the first time that manipulation of female condition can lead to divergent female preferences, with low-quality females actively preferring low-quality males over high-quality males. This result is in line with theory on state-dependent mate choice and is reminiscent of assortative mating preferences in humans. Here we discuss the implications of this work for the study of mate preferences. PMID:20714411

  6. Structure investigations of nonpolar GaN layers.

    PubMed

    Neumann, W; Mogilatenko, A; Wernicke, T; Richter, E; Weyers, M; Kneissl, M

    2010-03-01

    The microstructure of nonpolar m-plane (1100) oriented GaN layers deposited on (100)gamma-LiAlO(2) was analysed by transmission electron microscopy. This study shows that the films contain a large number of defects. The most dominant defects in the m-plane GaN are intrinsic I(1) basal plane stacking faults (approximately 10(4) cm(-1)), threading dislocations (approximately 10(9) cm(-2)) as well as a complex defect network consisting of planar defects located on prismatic {1010} GaN and differently inclined pyramidal planes. A large number of the stacking faults nucleate at the GaN/LiAlO(2) interface. Furthermore, the inclined planar defects act as additional nucleation sites for the basal plane stacking faults. A decreasing crystal quality with an increasing layer thickness can be explained by this defect formation mechanism. PMID:20500386

  7. Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method

    NASA Astrophysics Data System (ADS)

    Rudziński, M.; Kudrawiec, R.; Janicki, L.; Serafinczuk, J.; Kucharski, R.; Zając, M.; Misiewicz, J.; Doradziński, R.; Dwiliński, R.; Strupiński, W.

    2011-08-01

    GaN epilayers were grown by metalorganic chemical vapor deposition (MOCVD) on c-, m-, a-, and (20.1)-plane GaN substrates obtained by the ammonothermal method. The influence of (i) the surface preparation of substrates, (ii) MOCVD growth parameters, and (iii) the crystallographic orientation of substrates on the structural and optical properties of GaN epilayers was investigated and carefully analyzed. It was observed that the polishing of substrates and their misorientation have strong impact on the quality of GaN epilayers grown on these substrates. The MOCVD growth process was optimized for epilayers grown on m-plane GaN substrates. The best structural and optical properties were achieved for epilayers deposited at 1075 °C and the total reactor pressure of 50 mbar. These conditions were applied to grow GaN epilayers on substrates with other ( c-, a-, and (20.1)-plane) crystallographic orientations in the same MOCVD process. Particularly good optical properties were obtained for GaN epilayers deposited on polar and non-polar ( m- and a-plane) substrates, whereas slightly worse optical properties were observed for epilayers deposited on the semi-polar substrate. It therefore means that MOCVD growth conditions optimized for a given crystallographic direction ( m-plane direction in this case) work rather well also for other crystallographic directions.

  8. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

    NASA Astrophysics Data System (ADS)

    Su, Ming; Chen, Chingchi; Rajan, Siddharth

    2013-07-01

    GaN, a wide bandgap semiconductor successfully implemented in optical and high-speed electronic devices, has gained momentum in recent years for power electronics applications. Along with rapid progress in material and device processing technologies, high-voltage transistors over 600 V have been reported by a number of teams worldwide. These advances make GaN highly attractive for the growing market of electrified vehicles, which currently employ bipolar silicon devices in the 600-1200 V class for the traction inverter. However, to capture this billion-dollar power market, GaN has to compete with existing IGBT products and deliver higher performance at comparable or lower cost. This paper reviews key achievements made by the GaN semiconductor industry, requirements of the automotive electric drive system and remaining challenges for GaN power devices to fit in the inverter application of hybrid vehicles.

  9. Defect structure of a free standing GaN wafer grown by the ammonothermal method

    NASA Astrophysics Data System (ADS)

    Sintonen, Sakari; Suihkonen, Sami; Jussila, Henri; Lipsanen, Harri; Tuomi, Turkka O.; Letts, Edward; Hoff, Sierra; Hashimoto, Tadao

    2014-11-01

    White beam synchrotron radiation X-ray topography (SR-XRT) and X-ray diffraction (XRD) measurements were used to non-destructively study the defect structure of a bulk GaN wafer, grown by the ammonothermal method. SR-XRT topographs revealed high crystal quality with threading dislocation density 8.8×104 cm-2 and granular structure consisting of large, slightly misaligned grains. The threading dislocations within grains were identified as mixed and screw type, while no pure threading edge dislocations were observed.

  10. Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films

    SciTech Connect

    Bruch, Alexander W.; Xiong, Chi; Leung, Benjamin; Poot, Menno; Han, Jung; Tang, Hong X.

    2015-10-05

    We demonstrate broadband, low loss optical waveguiding in single crystalline GaN grown epitaxially on c-plane sapphire wafers through a buffered metal-organic chemical vapor phase deposition process. High Q optical microring resonators are realized in near infrared, infrared, and near visible regimes with intrinsic quality factors exceeding 50 000 at all the wavelengths we studied. TEM analysis of etched waveguide reveals growth and etch-induced defects. Reduction of these defects through improved material and device processing could lead to even lower optical losses and enable a wideband photonic platform based on GaN-on-sapphire material system.

  11. Strain splitting of the Γ5 and Γ6 free excitons in GaN

    NASA Astrophysics Data System (ADS)

    Reynolds, D. C.; Hoelscher, J.; Litton, Cole; Collins, T. C.

    2002-11-01

    High quality GaN crystals have been grown by the hydride vapor phase epitaxy process. The thick layers grown by this process have the potential to provide lattice-matched and thermally-matched substrates for further epitaxial growth. The current sample was grown on a sapphire substrate, resulting in both lattice and thermal mismatch, which produces strain in the as-grown-layer. These in-grown strains result in energy shifts as well as splittings of the free excitons due to combined strain and spin exchange.

  12. Setting standards for high-quality placements.

    PubMed

    Aitkenhead, Susan; Farran, Sean; Bateman, Ian

    As part of a project undertaken by a local education and training board, a wide range of stakeholders across South London were asked what makes a high-quality practice placement for student nurses, and how that quality could be effectively measured. This article outlines the drafting and testing of a set of quality standards in a mix of provider settings. Although further refinement is required, the standards enabled placement sites to question themselves about their own education and training processes, strengthened their partnership with the training and education board and facilitated the assurance that student nurses receive safe, effective and compassionate preparation when they are on placement. PMID:26434190

  13. Students' Perceptions of High Quality Science Teaching.

    ERIC Educational Resources Information Center

    Palmer, David

    1999-01-01

    Describes a study that sought to identify the attributes of high-quality science teachers at the junior high school level from the point of view of recent ex-students. Students described their best science teachers as presenting interesting and well-integrated hands-on activities, using a range of strategies to make lessons fun and interesting for…

  14. Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy

    SciTech Connect

    Shi, B. M.; Xie, M. H.; Wu, H. S.; Wang, N.; Tong, S. Y.

    2006-10-09

    GaN exists in both wurtzite and zinc-blende phases and the growths of the two on its (0001) or (111) surfaces are achieved by choosing proper deposition conditions of molecular-beam epitaxy (MBE). At low substrate temperatures but high gallium fluxes, metastable zinc-blende GaN films are obtained, whereas at high temperatures and/or using high nitrogen fluxes, equilibrium wurtzite phase GaN epilayers resulted. This dependence of crystal structure on substrate temperature and source flux is not affected by deposition rate. Rather, the initial stage nucleation kinetics plays a primary role in determining the crystallographic structures of epitaxial GaN by MBE.

  15. Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

    NASA Astrophysics Data System (ADS)

    Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-01

    The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 1019 cm-3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 1020 cm-3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 1019 cm-3. The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5 V and series resistances of 6-10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

  16. Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

    SciTech Connect

    Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-28

    The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

  17. Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

    SciTech Connect

    Gunning, BP; Fabien, CAM; Merola, JJ; Clinton, EA; Doolittle, WA; Wang, S; Fischer, AM; Ponce, FA

    2015-01-28

    The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 x 10(19) cm(-3) with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 x 10(20) cm(-3) show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 x 10(19) cm(-3). The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5V and series resistances of 6-10 Omega without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K. (C) 2015 AIP Publishing LLC.

  18. Comparative Raman and HRTEM study of nanostructured GaN nucleation layers and device layers on sapphire (0001).

    PubMed

    Pant, P; Narayan, J; Wushuer, A; Manghnani, M H

    2008-11-01

    Raman spectroscopy in conjunction with high-resolution transmission electron microscopy (HRTEM) has been used to study structural characteristics and strain distribution of the nanostructured GaN nucleation layer (NL) and the GaN device layer on (0001) sapphire substrates used for light-emitting diodes and lasers. Raman peaks corresponding to the cubic and the hexagonal phase of GaN are observed in the Raman spectrum from 15 nm and 45 nm NLs. A comparison of the peak intensities for the cubic and hexagonal phases of GaN in the NLs suggests that the cubic phase is dominant in the 15 nm NL and the hexagonal phase in the 45 nm NL. An increase in the density of stacking faults in the metastable cubic GaN (c-GaN) phase with increasing growth time lowers the system energy as well as locally converts c-GaN phase into hexagonal GaN (h-GaN). It also explains the observation of the more intense peaks of h-GaN in the 45 nm NL compared to c-GaN peaks. For the sample wherein an h-GaN device layer was grown at higher temperatures on the NL, narrow Raman peaks corresponding to only h-GaN were observed, confirming the high-quality of the films. The peak shift of the E2(H)(LO) mode of h-GaN in the NLs and the h-GaN film suggests the presence of a tensile stress in the NL which is attributed to defects such as stacking faults and twins, and a compressive stress in high-temperature grown h-GaN film which is attributed to the thermal-expansion mismatch between the film and the substrate. The peak shifts of the substrate also reveal that during the low temperature growth of the NL the substrate is under a compressive stress which is attributed to defects in the NL and during the high temperature growth of the device layer, there is a tensile strain in the substrate as expected from differences in coefficients of thermal expansion of the film and the substrate during the cooling cycle. PMID:19198336

  19. Development of Partial-Charge Potential for GaN

    SciTech Connect

    Gao, Fei; Devanathan, Ram; Oda, Takuji; Weber, William J.

    2006-09-01

    Partial-charged potentials for GaN are systematically developed that describes a wide range of structural properties, where the reference data for fitting the potential parameters are taken from ab initial calculations or experiments. The present potential model provides a good fit to different structural geometries and high pressure phases of GaN. The high-pressure transition from wurtzite to rock-salt structure is correctly described yielding the phase transition pressure of about 55 GPa, and the calculated volume change at the transition is in good agreement with experimental data. The results are compared with those obtained by ab initio simulations.

  20. Native defects in GaN: a hybrid functional study

    NASA Astrophysics Data System (ADS)

    Diallo, Ibrahima Castillo; Demchenko, Denis

    Intrinsic defects play an important role in the performance of GaN-based devices. We present hybrid density functional calculations of the electronic and possible optical properties of interstitial N (Ni-Ni) , N antisite (NGa) , interstitial Ga (Gai) , Ga antisite (GaN) , Ga vacancy (VGa) , N vacancy (VN) and Ga-N divacancies (VGaVN) in GaN. Our results show that the vacancies display relatively low formation energies in certain samples, whereas antisites and interstitials are energetically less favorable. However, interstitials can be created by electron irradiation. For instance, in 2.5 MeV electron-irradiated GaN samples, a strong correlation between the frequently observed photoluminescence (PL) band centered around 0.85 eV accompanied with a rich phonon sideband of ~0.88 eV and the theoretical optical behavior of interstitial Ga is discussed. N vacancies are found to likely contribute to the experimentally obtained green luminescence band (GL2) peaking at 2.24 eV in high-resistivity undoped and Mg-doped GaN. National Science Foundation (DMR-1410125) and the Thomas F. and Kate Miller Jeffress Memorial Trust.

  1. GaN microdomes for broadband omnidirectional antireflection for concentrator photovoltaics

    NASA Astrophysics Data System (ADS)

    Han, Lu; McGoogan, Matthew R.; Piedimonte, Tyler A.; Kidd, Ian V.; French, Roger H.; Zhao, Hongping

    2013-03-01

    GaN microdomes are studied as a broadband omnidirectional anti-reflection structure for high efficiency multi-junction concentrated photovoltaics. Comprehensive studies of the effect of GaN microdome sizes and shapes on the light collection efficiency were studied. The three dimensional finite difference time domain (3-D FDTD) method was used to calculate the surface reflectance of GaN microdomes as compared to that of the flat surface. Studies indicate significant reduction of the surface reflectance is achievable by properly designing the microdome structures. Formation of the GaN microdomes with the flexibility to tune the size and shape has been demonstrated by using reactive ion etching (RIE) of both GaN and the self-assembled silica monolayer microspheres. Characterizations of the angle-dependence light surface reflectance for both micro-domes and flat surface show the similar trend as the simulation.

  2. Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets

    NASA Astrophysics Data System (ADS)

    Yeh, Ting-Wei; Lin, Yen-Ting; Ahn, Byungmin; Stewart, Lawrence S.; Daniel Dapkus, P.; Nutt, Steven R.

    2012-01-01

    We demonstrate that nonpolar m-plane surfaces can be generated on uniform GaN nanosheet arrays grown vertically from the (0001)-GaN bulk material. InGaN/GaN multiple quantum wells (MQWs) grown on the facets of these nanosheets are demonstrated by cross-sectional transmission electron microscopy. Owing to the high aspect ratio of the GaN nanosheet structure, the MQWs predominantly grow on nonpolar GaN planes. The results suggest that GaN nanosheets provide a conduction path for device fabrication and also a growth template to reduce the piezoelectric field inside the active region of InGaN-based light emitting diodes.

  3. Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al{sub 2}O{sub 3} (0001) by high power impulse magnetron sputtering

    SciTech Connect

    Junaid, M.; Lundin, D.; Palisaitis, J.; Hsiao, C.-L.; Darakchieva, V.; Jensen, J.; Persson, P. O. A.; Sandstroem, P.; Helmersson, U.; Hultman, L.; Birch, J.; Lai, W.-J.; Chen, L.-C.; Chen, K.-H.

    2011-12-15

    We study the effect of high power pulses in reactive magnetron sputter epitaxy on the structural properties of GaN (0001) thin films grown directly on Al{sub 2}O{sub 3} (0001) substrates. The epilayers are grown by sputtering from a liquid Ga target, using a high power impulse magnetron sputtering power supply in a mixed N{sub 2}/Ar discharge. X-ray diffraction, micro-Raman, micro-photoluminescence, and transmission electron microscopy investigations show the formation of two distinct types of domains. One almost fully relaxed domain exhibits superior structural and optical properties as evidenced by rocking curves with a full width at half maximum of 885 arc sec and a low temperature band edge luminescence at 3.47 eV with the full width at half maximum of 10 meV. The other domain exhibits a 14 times higher isotropic strain component, which is due to the higher densities of the point and extended defects, resulting from the ion bombardment during growth. Voids form at the domain boundaries. Mechanisms for the formation of differently strained domains, along with voids during the epitaxial growth of GaN are discussed.

  4. Characteristics of High-Quality Teachers

    ERIC Educational Resources Information Center

    Jones, Jason E.; Gulek, James C.

    2010-01-01

    The purpose of this study was to examine the characteristics of high-quality teachers who used a structured mathematics program for teaching, namely the Math Achievement Program (MAP[superscript 2]D), which demonstrated significant gains on student achievement as measured by California's Standards Test (CST) in mathematics. Specifically, the…

  5. Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress

    SciTech Connect

    Wu, Y. Alamo, J. A. del; Chen, C.-Y.

    2015-01-14

    We have stressed AlGaN/GaN HEMTs (High Electron Mobility Transistors) under high-power and high-temperature DC conditions that resulted in various levels of device degradation. Following electrical stress, we conducted a well-established three-step wet etching process to remove passivation, gate and ohmic contacts so that the device surface can be examined by SEM and AFM. We have found prominent pits and trenches that have formed under the gate edge on the drain side of the device. The width and depth of the pits under the gate edge correlate with the degree of drain current degradation. In addition, we also found visible erosion under the full extent of the gate. The depth of the eroded region averaged along the gate width under the gate correlated with channel resistance degradation. Both electrical and structural analysis results indicate that device degradation under high-power DC conditions is of a similar nature as in better understood high-voltage OFF-state conditions. The recognition of a unified degradation mechanism provides impetus to the development of a degradation model with lifetime predictive capabilities for a broad range of operating conditions spanning from OFF-state to ON-state.

  6. Curvature and bow of bulk GaN substrates

    NASA Astrophysics Data System (ADS)

    Foronda, Humberto M.; Romanov, Alexey E.; Young, Erin C.; Roberston, Christian A.; Beltz, Glenn E.; Speck, James S.

    2016-07-01

    We investigate the bow of free standing (0001) oriented hydride vapor phase epitaxy grown GaN substrates and demonstrate that their curvature is consistent with a compressive to tensile stress gradient (bottom to top) present in the substrates. The origin of the stress gradient and the curvature is attributed to the correlated inclination of edge threading dislocation (TD) lines away from the [0001] direction. A model is proposed and a relation is derived for bulk GaN substrate curvature dependence on the inclination angle and the density of TDs. The model is used to analyze the curvature for commercially available GaN substrates as determined by high resolution x-ray diffraction. The results show a close correlation between the experimentally determined parameters and those predicted from theoretical model.

  7. Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction

    PubMed Central

    Kachkanov, V.; Leung, B.; Song, J.; Zhang, Y.; Tsai, M.-C.; Yuan, G.; Han, J.; O'Donnell, K. P.

    2014-01-01

    A method to grow high quality, single crystalline semiconductor material irrespective of the substrate would allow a cost-effective improvement to functionality and performance of optoelectronic devices. Recently, a novel type of substrate-insensitive growth process called Evolutionary Selection Selective Area Growth (ES-SAG) has been proposed. Here we report the use of X-ray microdiffraction to study the structural properties of GaN microcrystals grown by ES-SAG. Utilizing high resolution in both direct and reciprocal spaces, we have unraveled structural dynamics of GaN microcrystals in growth structures of different dimensions. It has been found that the geometric proportions of the growth constrictions play an important role: 2.6 μm and 4.5 μm wide growth tunnels favor the evolutionary selection mechanism, contrary to the case of 8.6 μm growth tunnels. It was also found that GaN microcrystal ensembles are dominated by slight tensile strain irrespective of growth tunnel shape. PMID:24722064

  8. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    SciTech Connect

    Szyszka, A. E-mail: adam.szyszka@pwr.wroc.pl; Haeberlen, M.; Storck, P.; Thapa, S. B.; Schroeder, T.

    2014-08-28

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  9. Ba4GaN3O

    PubMed Central

    Hashimoto, Takayuki; Yamane, Hisanori

    2014-01-01

    Red transparant platelet-shaped single crystals of tetra­barium gallium trinitride oxide, Ba4GaN3O, were synthesized by the Na flux method. The crystal structure is isotypic with Sr4GaN3O, containing isolated triangular [GaN3]6− anionic groups. O2− atoms are inserted between the slabs of [Ba4GaN3]2+, in which the [GaN3]6− groups are surrounded by Ba2+ atoms. PMID:24940188

  10. Layer-transferred MoS{sub 2}/GaN PN diodes

    SciTech Connect

    Lee, Edwin W.; Lee, Choong Hee; Paul, Pran K.; Krishnamoorthy, Sriram; Arehart, Aaron R.; Ma, Lu; McCulloch, William D.; Wu, Yiying; Rajan, Siddharth

    2015-09-07

    Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS{sub 2}/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS{sub 2} grown by chemical vapor deposition on sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). On-axis XRD spectra and surface topology obtained from AFM scans were consistent with previously grown high-quality, continuous MoS{sub 2} films. Current-voltage measurements of these diodes exhibited excellent rectification, and capacitance-voltage measurements were used to extract a conduction band offset of 0.23 eV for the transferred MoS{sub 2}/GaN heterojunction. This conduction band offset was confirmed by internal photoemission measurements. The energy band lineup of the MoS{sub 2}/GaN heterojunction is proposed here. This work demonstrates the potential of 2D/3D heterojunctions for novel device applications.

  11. Layer-transferred MoS2/GaN PN diodes

    NASA Astrophysics Data System (ADS)

    Lee, Edwin W.; Lee, Choong Hee; Paul, Pran K.; Ma, Lu; McCulloch, William D.; Krishnamoorthy, Sriram; Wu, Yiying; Arehart, Aaron R.; Rajan, Siddharth

    2015-09-01

    Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemical vapor deposition on sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). On-axis XRD spectra and surface topology obtained from AFM scans were consistent with previously grown high-quality, continuous MoS2 films. Current-voltage measurements of these diodes exhibited excellent rectification, and capacitance-voltage measurements were used to extract a conduction band offset of 0.23 eV for the transferred MoS2/GaN heterojunction. This conduction band offset was confirmed by internal photoemission measurements. The energy band lineup of the MoS2/GaN heterojunction is proposed here. This work demonstrates the potential of 2D/3D heterojunctions for novel device applications.

  12. Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

    NASA Astrophysics Data System (ADS)

    Chowdhury, Srabanti; Swenson, Brian L.; Hoi Wong, Man; Mishra, Umesh K.

    2013-07-01

    Gallium nitride (GaN) is becoming the material of choice for power electronics to enable the roadmap of increasing power density by simultaneously enabling high-power conversion efficiency and reduced form factor. This is because the low switching losses of GaN enable high-frequency operation which reduces bulky passive components with negligible change in efficiency. Commercialization of GaN-on-Si materials for power electronics has led to the entry of GaN devices into the medium-power market since the performance-over-cost of even first-generation products looks very attractive compared to today's mature Si-based solutions. On the other hand, the high-power market still remains unaddressed by lateral GaN devices. The current and voltage demand for high-power conversion application makes the chip area in a lateral topology so large that it becomes difficult to manufacture. Vertical GaN devices would play a big role alongside silicon carbide (SiC) to address the high-power conversion needs. In this paper vertical GaN devices are discussed with emphasis on current aperture vertical electron transistors (CAVETs) which have shown promising performance. The fabrication-related challenges and the future possibilities enabled by the availability of good-quality, cost-competitive bulk GaN material are also evaluated for CAVETs. This work was done at Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA.

  13. GaN: Defect and Device Issues

    SciTech Connect

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  14. Unusual M2-mediated metal-insulator transition in epitaxial VO2 thin films on GaN substrates

    NASA Astrophysics Data System (ADS)

    Yang, Hyoung Woo; Inn Sohn, Jung; Yang, Jae Hoon; Jang, Jae Eun; Cha, Seung Nam; Kim, Jongmin; Kang, Dae Joon

    2015-01-01

    We report on the epitaxial growth of vanadium dioxide (\\text{VO}2) thin films on (0001) GaN substrates using a radio frequency magnetron sputtering method and discuss their unusual M2-mediated metal-insulator transition (MIT) properties. We found that large lattice misfits between the \\text{VO}2 film and the GaN substrate could favor the stabilization of the intermediate insulating \\text{M}2 phase, which is known to be observed only in either doped or uniaxially strained samples. We demonstrated that the MIT in \\text{VO}2 films on GaN substrates could be mediated via a monoclinic \\text{M}2 phase during the transition from a monoclinic \\text{M}1 to a rutile R phase. This was confirmed by temperature-dependent Raman studies that exhibited both an evident upshift of a high-frequency phonon mode (ω\\text{V-O}) from 618 \\text{cm}-1 (\\text{M}1) to 645 \\text{cm}-1 (\\text{M}2) and a distinct peak splitting of a low-frequency phonon mode (ω\\text{V-V}) at 221 \\text{cm}-1 (\\text{M}2) for increasing temperatures. Moreover, a resistance change of four orders of magnitude was observed for \\text{VO}2 thin films on GaN substrates, being indicative of the high quality of \\text{VO}2 thin films. This study may offer great opportunities not only to improve the understanding of M2-mediated MIT behavior in \\text{VO}2 thin films, but also to realize novel electronic and optoelectronic devices.

  15. A liftoff process of GaN layers and devices through nanoporous transformation

    NASA Astrophysics Data System (ADS)

    Zhang, Yu; Leung, Benjamin; Han, Jung

    2012-04-01

    A process to slice and separate GaN device layers for vertical light emitting diodes (LEDs) is presented through a developed electrochemical anodization process to create nanoporous (NP) GaN of designed porosity profiles. The NP GaN serves dual purposes of supporting subsequent overgrowth of LED structures while undergoing, during growth, shape transformation into a largely voided morphology. It is shown that this voided region decreases the lateral fracture resistance and enables large-area separation of the LED structures after appropriate wafer bonding. The separated LED layers are shown to have comparable material quality before and after the liftoff process. Blue emitting GaN LEDs are transferred to silicon substrates with vertical configuration by this unique process.

  16. Study on photoemission surface of varied doping GaN photocathode

    NASA Astrophysics Data System (ADS)

    Qiao, Jianliang; Du, Ruijuan; Ding, Huan; Gao, Youtang; Chang, Benkang

    2014-09-01

    For varied doping GaN photocathode, from bulk to surface the doping concentrations are distributed from high to low. The varied doping GaN photocathode may produce directional inside electric field within the material, so the higher quantum efficiency can be obtained. The photoemission surface of varied doping GaN photocathode is very important to the high quantum efficiency, but the forming process of the surface state after Cs activation or Cs/O activation has been not known completely. Encircling the photoemission mechanism of varied GaN photocathode, considering the experiment phenomena during the activation and the successful activation results, the varied GaN photocathode surface model [GaN(Mg):Cs]:O-Cs after activation with cesium and oxygen was given. According to GaN photocathode activation process and the change of electronic affinity, the comparatively ideal NEA property can be achieved by Cs or Cs/O activation, and higher quantum efficiency can be obtained. The results show: The effective NEA characteristic of GaN can be gotten only by Cs. [GaN(Mg):Cs] dipoles form the first dipole layer, the positive end is toward the vacuum side. In the activation processing with Cs/O, the second dipole layer is formed by O-Cs dipoles, A O-Cs dipole includes one oxygen atom and two Cs atoms, and the positive end is also toward the vacuum side thus the escape of electrons can be promoted.

  17. Synthesis of GaN nanocrystallites by pulsed laser ablation in pure nitrogen background gases

    NASA Astrophysics Data System (ADS)

    Yoshida, Takehito; Kakumoto, Soichiro; Sugimura, Akira; Umezu, Ikurou

    2011-09-01

    GaN is a promising material not only for electronic devices but also for photocatalysts. Synthesis of GaN nanocrystal is a key issue to improve performance for these applications. In the present study, GaN nanocrystallites have been synthesized by pulsed laser ablation (PLA), where safe and inactive pure N2 gases were used as reactive background gases. The third harmonics beam of a Q-switched Nd:YAG laser (355 nm, 10 mJ/pulse, 4 J/(cm2 pulse)) was used to ablate a sintered high purity GaN target. The deposition substrates were not heated. It was clarified that the formed GaN nanoparticles contained a hexagonal system with the wurtzite structure. The diameter of the nanocrystallites was about 10 nm, and showed only little dependence on the background gas pressure, while the porosity of the assembly of nanocrystallites and content of GaN nanocrystallites in the assembly increased with background gas pressure. Highly porous nanometer-sized GaN film obtained at higher gas pressure is considered to be candidate structures for the photocatalysts.

  18. Assessment of GaN chips for culturing cerebellar granule neurons.

    PubMed

    Young, Tai-Horng; Chen, Chi-Ruei

    2006-06-01

    In this work, the behaviors of cerebellar granule neurons prepared from 7-day-old Wistar rats on gallium nitride (GaN) were investigated. We believe that this is the first time that the GaN has been used as a substrate for neuron cultures to examine its effect on cell response in vitro. The GaN surface structure and its relationship with cells were examined by atomic force microscopy (AFM), metallography microscopy, scanning electron microscopy (SEM), lactate dehydrogenase (LDH) release and Western blot analysis. GaN is a so-called III-V compound semiconductor material with a wide bandgap and a relatively high bandgap voltage. Compared with silicon used for most neural chips, neurons seeded on GaN were able to form an extensive neuritic network and expressed very high levels of GAP-43 coincident with the neurite outgrowth. Therefore, the GaN structure may spatially mediate cellular response that can promote neuronal cell attachment, differentiation and neuritic growth. The favorable biocompatibility characteristics of GaN can be used to measure electric signals from networks of neuronal cells in culture to make it a possible candidate for use in a microelectrode array. PMID:16516287

  19. High quality factor indium oxide mechanical microresonators

    SciTech Connect

    Bartolomé, Javier Cremades, Ana; Piqueras, Javier

    2015-11-09

    The mechanical resonance behavior of as-grown In{sub 2}O{sub 3} microrods has been studied in this work by in-situ scanning electron microscopy (SEM) electrically induced mechanical oscillations. Indium oxide microrods grown by a vapor–solid method are naturally clamped to an aluminum oxide ceramic substrate, showing a high quality factor due to reduced energy losses during mechanical vibrations. Quality factors of more than 10{sup 5} and minimum detectable forces of the order of 10{sup −16} N/Hz{sup 1/2} demonstrate their potential as mechanical microresonators for real applications. Measurements at low-vacuum using the SEM environmental operation mode were performed to study the effect of extrinsic damping on the resonators behavior. The damping coefficient has been determined as a function of pressure.

  20. Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

    NASA Astrophysics Data System (ADS)

    Lupina, L.; Zoellner, M. H.; Niermann, T.; Dietrich, B.; Capellini, G.; Thapa, S. B.; Haeberlen, M.; Lehmann, M.; Storck, P.; Schroeder, T.

    2015-11-01

    We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc2O3/Y2O3/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc2O3/Y2O3 buffer system a very promising template for the growth of high quality GaN layers on silicon.

  1. Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

    SciTech Connect

    Lupina, L.; Zoellner, M. H.; Dietrich, B.; Capellini, G.; Niermann, T.; Lehmann, M.; Thapa, S. B.; Haeberlen, M.; Storck, P.; Schroeder, T.

    2015-11-16

    We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

  2. Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask.

    PubMed

    Ji, Qingbin; Li, Lei; Zhang, Wei; Wang, Jia; Liu, Peichi; Xie, Yahong; Yan, Tongxing; Yang, Wei; Chen, Weihua; Hu, Xiaodong

    2016-08-24

    The existence of high threading dislocation density (TDD) in GaN-based epilayers is a long unsolved problem, which hinders further applications of defect-sensitive GaN-based devices. Multiple-modulation of epitaxial lateral overgrowth (ELOG) is used to achieve high-quality GaN template on a novel serpentine channel patterned sapphire substrate (SCPSS). The dislocation blocking brought by the serpentine channel patterned mask, coupled with repeated dislocation bending, can reduce the dislocation density to a yet-to-be-optimized level of ∼2 × 10(5) to 2 × 10(6) cm(-2). About 80% area utilization rate of GaN with low TDD and stress relaxation is obtained. The periodical variations of dislocation density, optical properties and residual stress in GaN-based epilayers on SCPSS are analyzed. The quantum efficiency of InGaN/GaN multiple quantum wells (MQWs) on it can be increased by 52% compared with the conventional sapphire substrate. The reduced nonradiative recombination centers, the enhanced carrier localization, and the suppressed quantum confined Stark effect, are the main determinants of improved luminous performance in MQWs on SCPSS. This developed ELOG on serpentine shaped mask needs no interruption and regrowth, which can be a promising candidate for the heteroepitaxy of semipolar/nonpolar GaN and GaAs with high quality. PMID:27484167

  3. Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.

    PubMed

    Krishna, Shibin; Aggarwal, Neha; Mishra, Monu; Maurya, K K; Singh, Sandeep; Dilawar, Nita; Nagarajan, Subramaniyam; Gupta, Govind

    2016-03-21

    The relationship of the growth temperature with stress, defect states, and electronic structure of molecular beam epitaxy grown GaN films on c-plane (0001) sapphire substrates is demonstrated. A minimum compressively stressed GaN film is grown by tuning the growth temperature. The correlation of dislocations/defects with the stress relaxation is scrutinized by high-resolution X-ray diffraction and photoluminescence measurements which show a high crystalline quality with significant reduction in the threading dislocation density and defect related bands. A substantial reduction in yellow band related defect states is correlated with the stress relaxation in the grown film. Temperature dependent Raman analysis shows the thermal stability of the stress relaxed GaN film which further reveals a downshift in the E2 (high) phonon frequency owing to the thermal expansion of the lattice at elevated temperatures. Electronic structure analysis reveals that the Fermi level of the films is pinned at the respective defect states; however, for the stress relaxed film it is located at the charge neutrality level possessing the lowest electron affinity. The analysis demonstrates that the generated stress not only affects the defect states, but also the crystal quality, surface morphology and electronic structure/properties. PMID:26916430

  4. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan; Bresnahan, Rich C.

    2015-10-21

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N{sub 2} while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N{sub 2} and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 10{sup 16} to 3.8 × 10{sup 19} cm{sup −3} were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 10{sup 15} cm{sup −3}. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be

  5. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan; Bresnahan, Rich C.

    2015-10-01

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N2 while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N2 and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 1016 to 3.8 × 1019 cm-3 were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1-2 × 1015 cm-3. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be addressed. Nonetheless, the dramatically enhanced growth rates demonstrate

  6. Synthesis of p-type GaN nanowires

    NASA Astrophysics Data System (ADS)

    Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2013-08-01

    GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo

  7. Stress and Defect Control in GaN Using Low Temperature Interlayers

    SciTech Connect

    Akasaki, I.; Amano, H.; Chason, E.; Figiel, J.; Floro, J.A.; Han, J.; Hearne, S.; Iwaya, M.; Kashima, T.; Katsuragcawa, M.

    1998-12-04

    In organometallic vapor phase epitaxial growth of Gail on sapphire, the role of the low- temperature-deposited interlayers inserted between high-temperature-grown GaN layers was investigated by in situ stress measurement, X-ray diffraction, and transmission electron microscopy. Insertion of a series of low temperature GaN interlayers reduces the density of threading dislocations while simultaneously increasing the tensile stress during growth, ultimately resulting in cracking of the GaN film. Low temperature AIN interlayers were found to be effective in suppressing cracking by reducing tensile stress. The intedayer approach permits tailoring of the film stress to optimize film structure and properties.

  8. Some effects of oxygen impurities on AlN and GaN

    NASA Astrophysics Data System (ADS)

    Slack, Glen A.; Schowalter, Leo J.; Morelli, Donald; Freitas, Jaime A.

    2002-12-01

    Oxygen is a common substitutional impurity in both AlN and GaN crystals. In the wurtzite 2H phase it can be present in AlN up to concentrations of 1×10 21/cm 3 while in GaN it can reach concentrations of 3×10 22/cm 3. These high concentrations of oxygen affect the luminescence, the optical absorption, the thermal conductivity, and the crystal perfection. The effects are somewhat similar in AlN and GaN. Representative experimental data will be presented to demonstrate the similarities, and to show how the oxygen content may be estimated from these property measurements.

  9. Fabrication of GaN nanotubular material using MOCVD with aluminum oxide membrane

    NASA Astrophysics Data System (ADS)

    Jung, Woo-Gwang; Jung, Se-Hyuck; Kung, Patrick; Razeghi, Manijeh

    2006-02-01

    GaN nanotubular material is fabricated with aluminum oxide membrane in MOCVD. SEM, XRD, TEM and PL are employed to characterize the fabricated GaN nanotubular material. An aluminum oxide membrane with ordered nano holes is used as template. Gallium nitride is deposited at the inner wall of the nano holes in aluminum oxide template, and the nanotubular material with high aspect ratio is synthesized using the precursors of TMG and ammonia gas. Optimal synthesis condition in MOCVD is obtained successfully for the gallium nitride nanotubular material in this research. The diameter of GaN nanotube fabricated is approximately 200 ~ 250 nm and the wall thickness is about 40 ~ 50 nm. GaN nanotubular material consists of numerous fine GaN particulates with sizes ranging 15 to 30 nm. The composition of gallium nitride is confirmed to be stoichiometrically 1:1 for Ga and N by EDS. XRD and TEM analyses indicate that grains in GaN nanotubular material have nano-crystalline structure. No blue shift is found in the PL spectrum on the GaN nanotubular material fabricated in aluminum oxide template.

  10. Fabrication of GaN nanotubular material using MOCVD with an aluminium oxide membrane

    NASA Astrophysics Data System (ADS)

    Jung, Woo-Gwang; Jung, Se-Hyuck; Kung, Patrick; Razeghi, Manijeh

    2006-01-01

    GaN nanotubular material is fabricated with an aluminium oxide membrane in MOCVD. SEM, XRD, TEM and PL are employed to characterize the fabricated GaN nanotubular material. An aluminium oxide membrane with ordered nanoholes is used as a template. Gallium nitride is deposited at the inner wall of the nanoholes in the aluminium oxide template, and the nanotubular material with high aspect ratio is synthesized using the precursors of TMG and ammonia gas. Optimal synthesis conditions in MOCVD are obtained successfully for the gallium nitride nanotubular material in this research. The diameter of the GaN nanotube fabricated is approximately 200-250 nm and the wall thickness is about 40-50 nm. GaN nanotubular material consists of numerous fine GaN particulates with size range 15-30 nm. The composition of gallium nitride is confirmed to be stoichiometrically 1:1 for Ga and N by EDS. XRD and TEM analyses indicate that the grains in GaN nanotubular material have a nano-crystalline structure. No blue shift is found in the PL spectrum on the GaN nanotubular material fabricated in an aluminium oxide template.

  11. Screw dislocations in GaN

    SciTech Connect

    Liliental-Weber, Zuzanna; Jasinski, Jacek B.; Washburn, Jack; O'Keefe, Michael A.

    2002-02-15

    GaN has received much attention over the past few years because of several new applications, including light emitting diodes, blue laser diodes and high-power microwave transistors. One of the biggest problems is a high density of structural defects, mostly dislocations, due to a lack of a suitable lattice-matched substrate since bulk GaN is difficult to grow in large sizes. Transmission Electron Microscopy (TEM) has been applied to study defects in plan-view and cross-sections on samples prepared by conventional techniques such as mechanical thinning and precision ion milling. The density of dislocations close to the sample surface of a 1 mm-thick HVPE sample was in the range of 3x109 cm-2. All three types of dislocations were present in these samples, and almost 50 percent were screw dislocations. Our studies suggest that the core structure of screw dislocations in the same material might differ when the material is grown by different methods.

  12. A guide to highly effective quality programs.

    PubMed

    Byrnes, John; Fifer, Joe

    2010-01-01

    To dramatically improve quality while decreasing costs, hospitals should: ensure all executives are vocal and visible supporters of quality improvement; focus the board of directors on quality as a strategic priority; strategically target quality resources to improve care for the majority of patients; use the finance system as the foundation for automated quality reporting; form a strong alliance between the CFO and chief quality officer, with each playing a leadership role in the quality program; rely on a well-executed quality program to improve efficiency and decrease the cost of care. PMID:20088475

  13. Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers

    DOEpatents

    Tansu, Nelson; Chan, Helen M; Vinci, Richard P; Ee, Yik-Khoon; Biser, Jeffrey

    2013-09-24

    The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

  14. Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

    SciTech Connect

    Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W.; Huang, H. C.; Ho, N. J.

    2014-02-10

    One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis.

  15. Synthesis of High-Quality Forsterite

    NASA Astrophysics Data System (ADS)

    Ando, Minato; Himura, Kenji; Tsunooka, Tsutomu; Kagomiya, Isao; Ohsato, Hitoshi

    2007-10-01

    To establish a process that produces high-quality forsterite stably, calcining and sintering conditions were investigated chiefly and two kinds of silica with different forms, and grain sizes were used as starting raw materials. On the basis of the quality factor (\\mathit{Qf}) for forsterite, the sintered samples prepared using powders calcined for 10-24 h, were found to be more stable than those in the case of 2-4 h, and in the case of 24 h of calcination, the samples showed a single phase of forsterite with fine grains. Silica with an amorphous form and a small grain size of 0.25 μm brought a higher \\mathit{Qf} value and a wider permissible temperature range of sintering than silica with a crystalline form and a coarse grain size of 0.82 μm. Concerning the sintering temperature, the sample sintered above 1400 °C showed a high \\mathit{Qf} value. The \\mathit{Qf} value of the sample calcined at 1175 °C for 24 h and sintered at 1450 °C for 2 h using fine-grain amorphous silica of 0.25 μm size, was improved to 219,200 GHz.

  16. An economical route to high quality lubricants

    SciTech Connect

    Andre, J.P.; Hahn, S.K.; Kwon, S.H.; Min, W.

    1996-12-01

    The current rends in the automotive and industrial markets toward more efficient engines, longer drain intervals, and lower emissions all contribute to placing increasingly stringent performance requirements on lubricants. The demand for higher quality synthetic and non-conventional basestocks is expected to grow at a much faster rate than that of conventional lube basestocks to meet these higher performance standards. Yukong Limited has developed a novel technology (the Yukong UCO Lube Process) for the economic production of high quality, high-viscosity-index lube basestocks from a fuels hydrocracker unconverted oil stream. A pilot plant based on this process has been producing oils for testing purposes since May 1994. A commercial facility designed to produce 3,500 BPD of VHVI lube basestocks cane on-stream at Yukong`s Ulsan refinery in October 1995. The Badger Technology Center of Raytheon Engineers and Constructors assisted Yukong during the development of the technology and prepared the basic process design package for the commercial facility. This paper presents process aspects of the technology and comparative data on investment and operating costs. Yukong lube basestock product properties and performance data are compared to basestocks produced by conventional means and by lube hydrocracking.

  17. Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

    SciTech Connect

    Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.

    2007-02-05

    Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers.

  18. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

    NASA Astrophysics Data System (ADS)

    Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

    2013-12-01

    The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (Tg) and Tg ramping method was investigated using deep level optical spectroscopy. Understanding the influence of Tg on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low Tg (800 °C) GaN films grown under QB conditions were compared to deep level spectra of high Tg (1150 °C) GaN. Reducing Tg, increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09 eV and 2.9 eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low Tg substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high Tg GaN growth to active layer growth can mitigate such non-radiative channels.

  19. Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates

    NASA Astrophysics Data System (ADS)

    Gagnon, Jarod C.; Shen, Haoting; Yuwen, Yu; Wang, Ke; Mayer, Theresa S.; Redwing, Joan M.

    2016-07-01

    A maskless Si trench structure was developed to integrate crystallographically non-polar GaN microstructures with semi-polar facets on Si(001). GaN "fins" were preferentially grown by MOCVD on Si{110} trench sidewalls formed by deep reactive ion etching (DRIE) of Si(001) such that GaN(0001)//Si{110} and GaN(10-10)//Si(001), resulting in a non-polar crystal structure with respect to the Si(001) substrate surface. No masking layer was required to prevent GaN growth on the Si(001) top surface of the trenches, instead, it was found that GaN nucleated preferentially on the Si{110} trench sidewalls. GaN was also observed to nucleate at the top corner of the trenches due to Si etching and exposure of high-index Si facets during the pre-growth H2 anneal. This undesired GaN nucleation was successfully suppressed by reducing the H2 anneal time and/or increasing the growth temperature and decreasing the precursor V/III to enhance Ga-adatom diffusion. Cross-sectional TEM studies confirmed that the GaN fins were crystallographically non-polar with respect to the Si(001) substrate surface and were bounded by semi-polar and non-polar facets. The reported Si fabrication and GaN growth process shows promise for the integration of non-polar and semi-polar GaN microstructures on industry standard Si(001) substrates.

  20. Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy.

    PubMed

    Wei, Tongbo; Yang, Jiankun; Wei, Yang; Huo, Ziqiang; Ji, Xiaoli; Zhang, Yun; Wang, Junxi; Li, Jinmin; Fan, Shoushan

    2016-01-01

    We report a novel method to fabricate high quality 2-inch freestanding GaN substrate grown on cross-stacked carbon nanotubes (CSCNTs) coated sapphire by hydride vapor phase epitaxy (HVPE). As nanoscale masks, these CSCNTs can help weaken the interface connection and release the compressive stress by forming voids during fast coalescence and also block the propagation of threading dislocations (TDs). During the cool-down process, thermal stress-induced cracks are initiated at the CSCNTs interface with the help of air voids and propagated all over the films which leads to full self-separation of FS-GaN substrate. Raman and photoluminescence spectra further reveal the stress relief and crystalline improvement of GaN with CSCNTs. It is expected that the efficient, low cost and mass-producible technique may enable new applications for CNTs in nitride optoelectronic fields. PMID:27340030

  1. Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy

    PubMed Central

    Wei, Tongbo; Yang, Jiankun; Wei, Yang; Huo, Ziqiang; Ji, Xiaoli; Zhang, Yun; Wang, Junxi; Li, Jinmin; Fan, Shoushan

    2016-01-01

    We report a novel method to fabricate high quality 2-inch freestanding GaN substrate grown on cross-stacked carbon nanotubes (CSCNTs) coated sapphire by hydride vapor phase epitaxy (HVPE). As nanoscale masks, these CSCNTs can help weaken the interface connection and release the compressive stress by forming voids during fast coalescence and also block the propagation of threading dislocations (TDs). During the cool-down process, thermal stress-induced cracks are initiated at the CSCNTs interface with the help of air voids and propagated all over the films which leads to full self-separation of FS-GaN substrate. Raman and photoluminescence spectra further reveal the stress relief and crystalline improvement of GaN with CSCNTs. It is expected that the efficient, low cost and mass-producible technique may enable new applications for CNTs in nitride optoelectronic fields. PMID:27340030

  2. Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Wei, Tongbo; Yang, Jiankun; Wei, Yang; Huo, Ziqiang; Ji, Xiaoli; Zhang, Yun; Wang, Junxi; Li, Jinmin; Fan, Shoushan

    2016-06-01

    We report a novel method to fabricate high quality 2-inch freestanding GaN substrate grown on cross-stacked carbon nanotubes (CSCNTs) coated sapphire by hydride vapor phase epitaxy (HVPE). As nanoscale masks, these CSCNTs can help weaken the interface connection and release the compressive stress by forming voids during fast coalescence and also block the propagation of threading dislocations (TDs). During the cool-down process, thermal stress-induced cracks are initiated at the CSCNTs interface with the help of air voids and propagated all over the films which leads to full self-separation of FS-GaN substrate. Raman and photoluminescence spectra further reveal the stress relief and crystalline improvement of GaN with CSCNTs. It is expected that the efficient, low cost and mass-producible technique may enable new applications for CNTs in nitride optoelectronic fields.

  3. Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Bryant, Benjamin N.; Young, Erin C.; Wu, Feng; Fujito, Kenji; Nakamura, Shuji; Speck, James S.

    2013-11-01

    In this study we demonstrate a direct correlation between carrier gas and the generation of basal plane stacking faults (BPSF) in m-plane GaN during hydride vapor phase epitaxy (HVPE) regrowth. Extended defects have hampered the expansion of non-polar and semi-polar GaN substrates. In this work, high-quality m-plane free-standing substrates were regrown by HVPE under a wide range of growth conditions and carrier gases. It was observed that hydrogen carrier gas in the HVPE growth promotes the creation of BPSF due to three-dimensional (3D) growth initiated from a masking effect. In contrast, nitrogen carrier gas suppresses 3D growth and thus BPSF generation.

  4. Properties of H, O and C in GaN

    SciTech Connect

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  5. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and

  6. High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al{sub 1−x}In{sub x}N epilayers grown on a low defect density m-plane freestanding GaN substrate

    SciTech Connect

    Chichibu, S. F. Hazu, K.; Furusawa, K.; Ishikawa, Y.; Onuma, T.; Ohtomo, T.; Ikeda, H.; Fujito, K.

    2014-12-07

    Structural and optical qualities of half-a-μm-thick m-plane Al{sub 1−x}In{sub x}N epilayers grown by metalorganic vapor phase epitaxy were remarkably improved via coherent growth on a low defect density m-plane freestanding GaN substrate prepared by hydride vapor phase epitaxy. All the epilayers unexceptionally suffer from uniaxial or biaxial anisotropic in-plane stress. However, full-width at half-maximum values of the x-ray ω-rocking curves were nearly unchanged as the underlayer values being 80 ∼ 150 arc sec for (101{sup ¯}0) and (101{sup ¯}2) diffractions with both 〈0001〉 and 〈112{sup ¯}0〉 azimuths, as long as pseudomorphic structure was maintained. Such Al{sub 1−x}In{sub x}N epilayers commonly exhibited a broad but predominant luminescence peak in ultraviolet (x ≤ 0.14) to green (x = 0.30) wavelengths. Its equivalent value of the internal quantum efficiency at room temperature was as high as 67% for x = 0.14 and 44% for x = 0.30. Because its high-energy cutoff commonly converged with the bandgap energy, the emission peak is assigned to originate from the extended near-band-edge states with strong carrier localization.

  7. Electronic-grade GaN(0001)/Al{sub 2}O{sub 3}(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target

    SciTech Connect

    Junaid, M.; Hsiao, C.-L.; Palisaitis, J.; Jensen, J.; Persson, P. O. A.; Hultman, L.; Birch, J.

    2011-04-04

    Electronic-grade GaN (0001) epilayers have been grown directly on Al{sub 2}O{sub 3} (0001) substrates by reactive direct-current-magnetron sputter epitaxy (MSE) using a liquid Ga sputtering target in an Ar/N{sub 2} atmosphere. The as-grown GaN epitaxial films exhibit low threading dislocation density on the order of {<=}10{sup 10} cm{sup -2} determined by transmission electron microscopy and modified Williamson-Hall plot. X-ray rocking curve shows narrow full-width at half maximum (FWHM) of 1054 arc sec of the 0002 reflection. A sharp 4 K photoluminescence peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. The high structural and optical qualities indicate that MSE-grown GaN epilayers can be used for fabricating high-performance devices without the need of any buffer layer.

  8. Luminescence properties of defects in GaN

    SciTech Connect

    Reshchikov, Michael A.; Morkoc, Hadis

    2005-03-15

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of

  9. Nanoheteroepitaxial lateral overgrowth of GaN on nanoporous Si(111)

    NASA Astrophysics Data System (ADS)

    Zang, K. Y.; Wang, Y. D.; Chua, S. J.; Wang, L. S.; Tripathy, S.; Thompson, C. V.

    2006-04-01

    Nanoheteroepitaxial (NHE) lateral overgrowth of GaN on nanoporous Si(111) substrates has been demonstrated. Nanopore arrays in Si(111) surfaces were fabricated using anodized aluminum oxide templates as etch masks, resulting in an average pore diameter and depth of about 60 and 160-180nm, respectively. NHE growth of AlN and GaN was found to result in a significant reduction in the threading dislocation density (<108cm-2) compared to that on flat Si(111). Most dislocations that originate at the Si interface bent to lie in the GaN (0001) basal plane during lateral growth over the pore openings. E2 phonon blueshifts in the Raman spectra indicate a significant relaxation of the tensile stress in the coalesced GaN films, due to three-dimensional stress relaxation mechanisms on porous substrates. Our results show that a single step lateral overgrowth of GaN on nanopatterned Si(111) substrates without a dielectric mask is a simple way to improve the crystalline quality of GaN layers for microelectronic applications.

  10. Depth dependence of defect density and stress in GaN grown on SiC

    NASA Astrophysics Data System (ADS)

    Faleev, N.; Temkin, H.; Ahmad, I.; Holtz, M.; Melnik, Yu.

    2005-12-01

    We report high resolution x-ray diffraction studies of the relaxation of elastic strain in GaN grown on SiC(0001). The GaN layers were grown with thickness ranging from 0.29to30μm. High level of residual elastic strain was found in thin (0.29to0.73μm thick) GaN layers. This correlates with low density of threading screw dislocations of 1-2×107cm-2, observed in a surface layer formed over a defective nucleation layer. Stress was found to be very close to what is expected from thermal expansion mismatch between the GaN and SiC. A model based on generation and diffusion of point defects accounts for these observations.

  11. Depth dependence of defect density and stress in GaN grown on SiC

    SciTech Connect

    Faleev, N.; Temkin, H.; Ahmad, I.; Holtz, M.; Melnik, Yu.

    2005-12-15

    We report high resolution x-ray diffraction studies of the relaxation of elastic strain in GaN grown on SiC(0001). The GaN layers were grown with thickness ranging from 0.29 to 30 {mu}m. High level of residual elastic strain was found in thin (0.29 to 0.73 {mu}m thick) GaN layers. This correlates with low density of threading screw dislocations of 1-2x10{sup 7} cm{sup -2}, observed in a surface layer formed over a defective nucleation layer. Stress was found to be very close to what is expected from thermal expansion mismatch between the GaN and SiC. A model based on generation and diffusion of point defects accounts for these observations.

  12. GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Dussaigne, A.; Malinverni, M.; Martin, D.; Castiglia, A.; Grandjean, N.

    2009-10-01

    GaN epilayers are grown on (1 1 1) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial wurtzite GaN film is obtained. The surface morphology is smooth: the rms roughness is as low as 1.3 nm for 2×2 μm 2 scan. Photoluminescence measurements reveal pretty good optical properties. The GaN band edge is centred at 3.469 eV with a linewidth of 5 meV. These results demonstrate that GaN heteroepitaxially grown on diamond opens new rooms for high power electronic applications.

  13. Thermal Conductivity and Large Isotope Effect in GaN from First Principles

    SciTech Connect

    Lindsay, L.; Broido, D. A.; Reinecke, T. L.

    2012-08-28

    We present atomistic first principles results for the lattice thermal conductivity of GaN and compare them to those for GaP, GaAs, and GaSb. In GaN we find a large increase to the thermal conductivity with isotopic enrichment, ~65% at room temperature. We show that both the high thermal conductivity and its enhancement with isotopic enrichment in GaN arise from the weak coupling of heat-carrying acoustic phonons with optic phonons. This weak scattering results from stiff atomic bonds and the large Ga to N mass ratio, which give phonons high frequencies and also a pronounced energy gap between acoustic and optic phonons compared to other materials. Rigorous understanding of these features in GaN gives important insights into the interplay between intrinsic phonon-phonon scattering and isotopic scattering in a range of materials.

  14. Demonstration of crystal-vapor equilibrium leading to growth blockade of GaN during selective area growth

    NASA Astrophysics Data System (ADS)

    André, Y.; Trassoudaine, A.; Gil, E.; Lekhal, K.; Chelda-Gourmala, O.; Castelluci, D.; Cadoret, R.

    2012-09-01

    The synthesis of GaN by selective area growth using Hydride Vapor Phase Epitaxy (SAG-HVPE) is reported for stripes patterned along <11bar00 > and <112bar0>GaN on c-plane sapphire substrates. A systematic control of the GaN morphologies was carried out by both cross-sectional and surface Scanning Electron Microscopy (SEM). A complete HVPE cartography of GaN-SAG revealed domains of zero growth rates at high concentration of hydrogen in the carrier gas. The determination of the mechanisms that govern the growth of GaN morphologies was particularly emphasized. A theoretical model based on thermodynamic and kinetic analyses of the grown (0001) GaN layers was discussed, in combination with experiments on unmasked (0001) GaN and patterned GaN/c-plane sapphire substrates. Long HVPE runs were performed to demonstrate that the prevailing growth mechanism, for high hydrogen concentration in the carrier gas, is a mechanism based on a dechlorination by GaCl2 gas species. This mechanism leads to growth blockade of GaN growth and constitutes a very interesting issue for shaping GaN material as an alternative to top-down micro- and nano-technologies.

  15. Document segmentation for high-quality printing

    NASA Astrophysics Data System (ADS)

    Ancin, Hakan

    1997-04-01

    A technique to segment dark texts on light background of mixed mode color documents is presented. This process does not perceptually change graphics and photo regions. Color documents are scanned and printed from various media which usually do not have clean background. This is especially the case for the printouts generated from thin magazine samples, these printouts usually include text and figures form the back of the page, which is called bleeding. Removal of bleeding artifacts improves the perceptual quality of the printed document and reduces the color ink usage. By detecting the light background of the document, these artifacts are removed from background regions. Also detection of dark text regions enables the halftoning algorithms to use true black ink for the black text pixels instead of composite black. The processed document contains sharp black text on white background, resulting improved perceptual quality and better ink utilization. The described method is memory efficient and requires a small number of scan lines of high resolution color documents during processing.

  16. Method for synthesis of high quality graphene

    DOEpatents

    Lanzara, Alessandra; Schmid, Andreas K.; Yu, Xiaozhu; Hwang, Choonkyu; Kohl, Annemarie; Jozwiak, Chris M.

    2012-03-27

    A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10.sup.-6 Torr, the wafer temperature is raised to about 1500.degree. C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530.degree. C. or more, the carbon atoms self assemble themselves into graphene.

  17. The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures

    NASA Astrophysics Data System (ADS)

    Jahn, U.; Musolino, M.; Lähnemann, J.; Dogan, P.; Fernández Garrido, S.; Wang, J. F.; Xu, K.; Cai, D.; Bian, L. F.; Gong, X. J.; Yang, H.

    2016-06-01

    GaN several tens of μm thick has been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates were covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam epitaxy. During the first low-temperature (low-T) HVPE step, stacking faults (SF) form, which show distinct luminescence lines and stripe-like features in the cathodoluminescence images of the cross-section of the layers. These cathodoluminescence features provide an insight into the growth process. During a second high-temperature (high-T) step, the SFs disappear, and the luminescence of this part of the GaN layer is dominated by the donor-bound exciton. For templates consisting of both a thin AlN buffer and GaN nanostructures, the incorporation of silicon into the GaN grown by HVPE is not observed. Moreover, the growth mode of the (high-T) HVPE step depends on the specific structure of the AlN/GaN template, where in the first case, epitaxy is dominated by the formation of slowly growing facets, while in the second case, epitaxy proceeds directly along the c-axis. For templates without GaN nanostructures, cathodoluminescence spectra excited close to the Si/GaN interface show a broadening toward higher energies, indicating the incorporation of silicon at a high dopant level.

  18. Mass transport, faceting and behavior of dislocations in GaN

    SciTech Connect

    Nitta, S.; Kashima, T.; Kariya, M.; Yukawa, Y.; Yamaguchi, S.; Amano, H.; Akasaki, I.

    2000-07-01

    The behavior of threading dislocations during mass transport of GaN was investigated in detail by transmission electron microscopy. Mass transport occurred at the surface. Therefore, growing species are supplied from the in-plane direction. The behavior of threading dislocations was found to be strongly affected by the mass transport process as well as the high crystallographic anisotropy of the surface energy of the facets particular to GaN.

  19. The Effects of Ba-Additive on Growth of a-Plane GaN Single Crystals Using Na Flux Method

    NASA Astrophysics Data System (ADS)

    Masumoto, Keiko; Someno, Tatsuya; Murakami, Kosuke; Imabayashi, Hiroki; Takazawa, Hideo; Todoroki, Yuma; Matsuo, Daisuke; Kitamoto, Akira; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Kitaoka, Yasuo; Sasaki, Takatomo; Mori, Yusuke

    2012-04-01

    Large-area nonpolar GaN substrates with high crystallinity are necessary to improve the performance of GaN devices. Nonpolar GaN substrates of 2-in. diameter have been commercially fabricated by growing along the nonpolar direction on heterogeneous substrates. However, the crystallinity of the nonpolar GaN substrates requires improvement. Here, we grew a-plane GaN crystals using the Na flux method and investigated the effects of a Ba-additive on surface morphology and crystallinity. We found that the crystallinity of the crystals grown by the Na flux method was greatly improved compared with that of seed substrates. Moreover, the use of the Ba-additive suppressed the formation of voids that occurred during the Na flux growth without the Ba-additive. As a result, a-plane GaN crystals with high crystallinity were produced using the Na flux method with the Ba-additive.

  20. Creating High-Quality Classroom Assignments

    ERIC Educational Resources Information Center

    Matsumura, Lindsay Clare; Gallimore, Ronald

    2005-01-01

    Research indicates that the quality of classroom assignments makes a difference in student learning. Moreover, assignment quality varies between teachers even within the same school and there is room for improvement in many of the assignments that teachers provide to students. Assignment quality, as described in this book, puts into practice…

  1. Defect reduction in (11-22) semipolar GaN with embedded InN islands on m-plane sapphire

    NASA Astrophysics Data System (ADS)

    Jung, Chilsung; Jang, Jongjin; Hwang, Junghwan; Jeong, Joocheol; Kim, Jinwan; Lee, kyungjae; Nam, Okhyun

    2013-05-01

    This paper reports on the improved properties of semipolar (11-22) GaN with embedded InN islands on m-plane sapphire substrate. The crystal quality of GaN grown over embedded InN islands was improved by the defect blocking mechanism that the InN islands stop from propagating of dislocations. The full width at half maximum (FWHM) of X-ray rocking curves for the on- and off-axes planes of GaN with embedded InN islands significantly narrowed. The photoluminescence (PL) intensity of GaN with embedded InN islands increased by 28% compared with that of GaN without InN islands (reference GaN). The n-type GaN carrier mobility was analyzed by using temperature-dependent Hall effect measurement. The increase in peak mobility at 350 K from 104 to 113 cm2/Vs with embedded islands also suggested the effectiveness of embedded InN islands in GaN. LEDs fabricated on (11-22) GaN with embedded InN islands showed approximately 2.7 times higher optical output power than the reference LED at 100 mA.

  2. Droplet heteroepitaxy of zinc-blende vs. wurtzite GaN quantum dots

    NASA Astrophysics Data System (ADS)

    Reese, C.; Jeon, S.; Hill, T.; Jones, C.; Shusterman, S.; Yacoby, Y.; Clarke, R.; Deng, H.; Goldman, Rs

    We have developed a GaN droplet heteroepitaxy process based upon plasma-assisted molecular-beam epitaxy. Using various surface treatments and Ga deposition parameters, we have demonstrated polycrystalline, zinc-blende (ZB), and wurtzite (WZ) GaN quantum dots (QDs) on Si(001), r-Al2O3, Si(111), and c-GaN substrates. For the polar substrates (i.e. Si(111) and c-GaN), high-resolution transmission electron microscopy and coherent Bragg rod analysis reveals the formation of coherent WZ GaN QDs with nitridation-temperature-dependent sizes and densities. For the non-polar substrates (i.e. Si(001) and r-Al2O3) , QDs with strong near-band photoluminescence emission are observed and ZB GaN QD growth on Si(001) is demonstrated for the first time.

  3. Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

    NASA Astrophysics Data System (ADS)

    Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

    2016-09-01

    In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

  4. Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers

    SciTech Connect

    Seitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Poisson, M.A.; Beaumont, B.

    1999-07-01

    GaN, its alloys, QWs and MQWs have gained an important place among short-wavelength optical emitters and high temperature electronic devices. The performance of such devices is limited by the presence of native and impurity defects. The understanding of the optical properties of the basic material allows them to improve its quality and thus increase the performance of these materials. In non intentionally doped (nid) hexagonal good quality GaN layers grown on sapphire, 6H-SiC or Si, free exciton (FXC, FXB, FXA), donor bound exciton (DX), acceptor bound exciton (AX) and donor-acceptor pair (DAP) transitions have been reported by several authors. Besides these typical emissions, emission lines in the range 3.3--3.44 eV have been observed in nid and intentionally doped hexagonal GaN layers. However, the nature of these recombinations is not completely clarified. Some authors assigned them to a superposition of LO phonon assisted transitions of DX and FX, excitons bound to neutral donors with deeper donor levels, band to impurity transitions and/or free to bound emission involving oxygen, DAP transitions, shallow bound excitons of cubic phases, excitons bound to structural defects and Zn related recombinations. In this work the authors analyze the luminescence between 3.36 eV and 3.41 eV of nid hexagonal GaN samples grown on sapphire. They found sample dependent emission lines with no DAP behavior. From the data they are able to identify different kinds of recombination processes in the same spectral region.

  5. Excitation and deexcitation dynamics of excitons in a GaN film based on the analysis of radiation from high-order states

    NASA Astrophysics Data System (ADS)

    Ishitani, Yoshihiro; Takeuchi, Kazuma; Oizumi, Naoyuki; Sakamoto, Hironori; Ma, Bei; Morita, Ken; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-06-01

    The physical mechanism of excitation and deexcitation transitions of nonthermal exciton states in a GaN film is investigated at a measurement temperature of 23 K by time-resolved photoluminescence (PL) analysis involving phonon replica lines of the principal quantum number n  =  2 in addition to n  =  1 and bound states of the A exciton. A time region of 280 ps after a pulse excitation is mainly analyzed. The emission intensities of the constituent lines are obtained by spectrum fitting. Although the effective exciton temperature of the n  =  1 state shows a relaxation time within approximately 150 ps as a previous report, the temperature of the n  =  2 state is found to have a longer relaxation time. This is because the n  =  2 state strongly couples with the continuum by excitation and deexcitation transfers, while the n  =  1 state couples with the donor bound state. These two systems exhibit different dynamic properties. Overall population transfer is the direction of energy relaxation, however, cooling of the upper states is delayed when compared to the lower states by the increase in the excitation transfer rate to the continuum. This dynamics of the exciton has a similarity to that of hydrogen atoms in plasma.

  6. Growth and characterization of horizontal GaN wires on silicon

    SciTech Connect

    Zou, Xinbo; May Lau, Kei; Lu, Xing; Lucas, Ryan; Kuech, Thomas F.; Choi, Jonathan W.; Gopalan, Padma

    2014-06-30

    We report the growth of in-plane GaN wires on silicon by metalorganic chemical vapor deposition. Triangular-shaped GaN microwires with semi-polar sidewalls are observed to grow on top of a GaN/Si template patterned with nano-porous SiO{sub 2}. With a length-to-thickness ratio ∼200, the GaN wires are well aligned along the three equivalent 〈 112{sup ¯}0 〉 directions. Micro-Raman measurements indicate negligible stress and a low defect density inside the wires. Stacking faults were found to be the only defect type in the GaN wire by cross-sectional transmission electron microscopy. The GaN wires exhibited high conductivity, and the resistivity was 20–30 mΩ cm, regardless of the wire thickness. With proper heterostructure and doping design, these highly aligned GaN wires are promising for photonic and electronic applications monolithically integrated on silicon.

  7. Influence of Annealing Conditions on Dopant Antirotation of Si+ and Mg+ Implanted GaN

    SciTech Connect

    Suvkhanov, A.; Parikh, N.; Usov, I.; Hunn, J.D.; Withrow, S.; Thomson, D.; Herke, T.; Davis, R.F.; Krasnobaev, L.

    1999-10-12

    This report reflects the results of heat treatment under various conditions on as-grown and ion implanted GaN. The PL spectrums of as-grown GaN and GaN with 400 A AlN cap were almost identical. This fact allows one to use PL analysis without AlN stripping. As-grown GaN and ion implanted with Mg and Si crystals were annealed at 1300 C for 10 minutes in three different conditions: in flowing argon gas; in flowing ultra high purity nitrogen; and in a quartz capsule sealed with nitrogen gas. The results of PL, RBS, SEM and TEM analysis show an advantage of GaN high temperature annealing in quartz capsules with nitrogen ambient as compared to annealing in argon and nitrogen gas flow. Encapsulation with nitrogen over-pressure prevents the decomposition of the GaN crystal and the AlN capping film, and allows one to achieve optical activation of implanted Mg and Si after 1300 C annealing.

  8. Room-Temperature Transport of Indirect Excitons in (Al ,Ga )N /GaN Quantum Wells

    NASA Astrophysics Data System (ADS)

    Fedichkin, F.; Guillet, T.; Valvin, P.; Jouault, B.; Brimont, C.; Bretagnon, T.; Lahourcade, L.; Grandjean, N.; Lefebvre, P.; Vladimirova, M.

    2016-07-01

    We report on the exciton propagation in polar (Al ,Ga )N /GaN quantum wells over several micrometers and up to room temperature. The key ingredient to achieve this result is the crystalline quality of GaN quantum wells grown on GaN substrate that limits nonradiative recombination. From the comparison of the spatial and temporal dynamics of photoluminescence, we conclude that the propagation of excitons under continuous-wave excitation is assisted by efficient screening of the in-plane disorder. Modeling within drift-diffusion formalism corroborates this conclusion and suggests that exciton propagation is still limited by the exciton scattering on defects rather than by exciton-exciton scattering so that improving interface quality can boost exciton transport further. Our results pave the way towards room-temperature excitonic devices based on gate-controlled exciton transport in wide-band-gap polar heterostructures.

  9. Bandgap engineering of GaN nanowires

    NASA Astrophysics Data System (ADS)

    Ming, Bang-Ming; Wang, Ru-Zhi; Yam, Chi-Yung; Xu, Li-Chun; Lau, Woon-Ming; Yan, Hui

    2016-05-01

    Bandgap engineering has been a powerful technique for manipulating the electronic and optical properties of semiconductors. In this work, a systematic investigation of the electronic properties of [0001] GaN nanowires was carried out using the density functional based tight-binding method (DFTB). We studied the effects of geometric structure and uniaxial strain on the electronic properties of GaN nanowires with diameters ranging from 0.8 to 10 nm. Our results show that the band gap of GaN nanowires depends linearly on both the surface to volume ratio (S/V) and tensile strain. The band gap of GaN nanowires increases linearly with S/V, while it decreases linearly with increasing tensile strain. These linear relationships provide an effect way in designing GaN nanowires for their applications in novel nano-devices.

  10. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

    PubMed

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-01-01

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices. PMID:26563573

  11. Integrating Quality into the Textile and Apparel High School Curriculum.

    ERIC Educational Resources Information Center

    Meyer, Deborah J. C.; Kadolph, Sara J.; Cosbey, Sarah; Hillery, Julie; Haar, Sherry; Day, Marla; Keiser, Sandra; Brandes, Kendra

    2001-01-01

    Explains the importance of quality assurance in high school textiles and apparel instruction. Describes educational activities that integrate quality assurance concepts (teamwork, continuous improvement, customer focus, and empowerment). (Contains 23 references.) (SK)

  12. High Efficiency, Illumination Quality OLEDs for Lighting

    SciTech Connect

    Joseph Shiang; James Cella; Kelly Chichak; Anil Duggal; Kevin Janora; Chris Heller; Gautam Parthasarathy; Jeffery Youmans; Joseph Shiang

    2008-03-31

    The goal of the program was to demonstrate a 45 lumen per watt white light device based upon the use of multiple emission colors through the use of solution processing. This performance level is a dramatic extension of the team's previous 15 LPW large area illumination device. The fundamental material system was based upon commercial polymer materials. The team was largely able to achieve these goals, and was able to deliver to DOE a 90 lumen illumination source that had an average performance of 34 LPW a 1000 cd/m{sup 2} with peak performances near 40LPW. The average color temperature is 3200K and the calculated CRI 85. The device operated at a brightness of approximately 1000cd/m{sup 2}. The use of multiple emission colors particularly red and blue, provided additional degrees of design flexibility in achieving white light, but also required the use of a multilayered structure to separate the different recombination zones and prevent interconversion of blue emission to red emission. The use of commercial materials had the advantage that improvements by the chemical manufacturers in charge transport efficiency, operating life and material purity could be rapidly incorporated without the expenditure of additional effort. The program was designed to take maximum advantage of the known characteristics of these material and proceeded in seven steps. (1) Identify the most promising materials, (2) assemble them into multi-layer structures to control excitation and transport within the OLED, (3) identify materials development needs that would optimize performance within multilayer structures, (4) build a prototype that demonstrates the potential entitlement of the novel multilayer OLED architecture (5) integrate all of the developments to find the single best materials set to implement the novel multilayer architecture, (6) further optimize the best materials set, (7) make a large area high illumination quality white OLED. A photo of the final deliverable is shown. In

  13. Behavior of aluminum adsorption and incorporation at GaN(0001) surface: First-principles study

    SciTech Connect

    Qin, Zhenzhen; Xiong, Zhihua Wan, Qixin; Qin, Guangzhao

    2013-11-21

    First-principles calculations are performed to study the energetics and atomic structures of aluminum adsorption and incorporation at clean and Ga-bilayer GaN(0001) surfaces. We find the favorable adsorption site changes from T4 to T1 as Al coverage increased to 1 monolayer on the clean GaN(0001) surface, and a two-dimensional hexagonal structure of Al overlayer appears. It is interesting the Al atoms both prefer to concentrate in one deeper Ga layer of clean and Ga-bilayer GaN(0001) surface, respectively, while different structures could be achieved in above surfaces. For the case of clean GaN(0001) surface, corresponding to N-rich and moderately Ga-rich conditions, a highly regular superlattice structure composed of wurtzite GaN and AlN becomes favorable. For the case of Ga-bilayer GaN(0001) surface, corresponding to extremely Ga-rich conditions, the Ga bilayer is found to be sustained stable in Al incorporating process, leading to an incommensurate structure directly. Furthermore, our calculations provide an explanation for the spontaneous formation of ordered structure and incommensurate structure observed in growing AlGaN films. The calculated results are attractive for further development of growth techniques and excellent AlGaN/GaN heterostructure electronic devices.

  14. Reduction of stress at the initial stages of GaN growth on Si(111)

    NASA Astrophysics Data System (ADS)

    Dadgar, A.; Poschenrieder, M.; Reiher, A.; Bläsing, J.; Christen, J.; Krtschil, A.; Finger, T.; Hempel, T.; Diez, A.; Krost, A.

    2003-01-01

    GaN growth on heterosubstrates usually leads to an initially high dislocation density at the substrate/seed layer interface. Due to the initial growth from small crystallites, tensile stress is generated at the coalescence boundaries during GaN growth. In addition, with tensile thermal stress this leads to cracking of GaN on Si and SiC substrates when cooling to room temperature. By partially masking the typically applied AlN seed layer on Si(111) with an in situ deposited SiN mask a reduction in tensile stress can be achieved for the subsequently grown GaN layer. Additionally, the 6 K GaN band edge photoluminescence is increased by about an order of magnitude and shifts by 21 meV, which can be attributed to a change in tensile stress of ˜0.8 GPa, in good agreement with x-ray diffractometry measurements. This improvement in material properties can be attributed to a reduction of grain boundaries by the growth of larger sized crystallites and lateral overgrowth of less defective GaN.

  15. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Corrion, A. L.; Poblenz, C.; Wu, F.; Speck, J. S.

    2008-05-01

    The impact of growth conditions on the surface morphology and structural properties of ammonia molecular beam epitaxy GaN buffers layers on SiC substrates was investigated. The threading dislocation (TD) density was found to decrease with decreasing NH{sub 3}:Ga flux ratio, which corresponded to an increase in surface roughness and reduction in residual compressive lattice mismatch stress. Furthermore, the dislocation density and compressive stress decreased for increasing buffer thickness. TD inclination was proposed to account for these observations. Optimized surface morphologies were realized at high NH{sub 3}:Ga flux ratios and were characterized by monolayer-high steps, spiral hillocks, and pyramidal mounds, with rms roughness of {approx}1.0 nm over 2x2 {mu}m{sup 2} atomic force microscopy images. Smooth surface morphologies were realized over a large range of growth temperatures and fluxes, and growth rates of up to 1 {mu}m/h were achieved. TD densities in the buffers as low as 3x10{sup 9} cm{sup -2} were demonstrated. These buffers were highly insulating and were used in recently reported AlGaN/GaN HEMTs with power densities of >11 W/mm at 4 and 10 GHz.

  16. Oxidation of GaN: An ab initio thermodynamic approach

    NASA Astrophysics Data System (ADS)

    Jackson, Adam J.; Walsh, Aron

    2013-10-01

    GaN is a wide-band-gap semiconductor used in high-efficiency light-emitting diodes and solar cells. The solid is produced industrially at high chemical purities by deposition from a vapor phase, and oxygen may be included at this stage. Oxidation represents a potential path for tuning its properties without introducing more exotic elements or extreme processing conditions. In this work, ab initio computational methods are used to examine the energy potentials and electronic properties of different extents of oxidation in GaN. Solid-state vibrational properties of Ga, GaN, Ga2O3, and a single substitutional oxygen defect have been studied using the harmonic approximation with supercells. A thermodynamic model is outlined which combines the results of ab initio calculations with data from experimental literature. This model allows free energies to be predicted for arbitrary reaction conditions within a wide process envelope. It is shown that complete oxidation is favorable for all industrially relevant conditions, while the formation of defects can be opposed by the use of high temperatures and a high N2:O2 ratio.

  17. Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

    NASA Astrophysics Data System (ADS)

    Sintonen, Sakari; Rudziński, Mariusz; Suihkonen, Sami; Jussila, Henri; Knetzger, Michael; Meissner, Elke; Danilewsky, Andreas; Tuomi, Turkka O.; Lipsanen, Harri

    2014-08-01

    The crystal quality of bulk GaN crystals is continuously improving due to advances in GaN growth techniques. Defect characterization of the GaN substrates by conventional methods is impeded by the very low dislocation density and a large scale defect analysis method is needed. White beam synchrotron radiation x-ray topography (SR-XRT) is a rapid and non-destructive technique for dislocation analysis on a large scale. In this study, the defect structure of an ammonothermal c-plane GaN substrate was recorded using SR-XRT and the image contrast caused by the dislocation induced microstrain was simulated. The simulations and experimental observations agree excellently and the SR-XRT image contrasts of mixed and screw dislocations were determined. Apart from a few exceptions, defect selective etching measurements were shown to correspond one to one with the SR-XRT results.

  18. Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

    SciTech Connect

    Sintonen, Sakari Suihkonen, Sami; Jussila, Henri; Tuomi, Turkka O.; Lipsanen, Harri; Rudziński, Mariusz; Knetzger, Michael; Meissner, Elke; Danilewsky, Andreas

    2014-08-28

    The crystal quality of bulk GaN crystals is continuously improving due to advances in GaN growth techniques. Defect characterization of the GaN substrates by conventional methods is impeded by the very low dislocation density and a large scale defect analysis method is needed. White beam synchrotron radiation x-ray topography (SR-XRT) is a rapid and non-destructive technique for dislocation analysis on a large scale. In this study, the defect structure of an ammonothermal c-plane GaN substrate was recorded using SR-XRT and the image contrast caused by the dislocation induced microstrain was simulated. The simulations and experimental observations agree excellently and the SR-XRT image contrasts of mixed and screw dislocations were determined. Apart from a few exceptions, defect selective etching measurements were shown to correspond one to one with the SR-XRT results.

  19. Structural and antireflective characteristics of catalyst-free GaN nanostructures on GaN/sapphire template for solar cell applications

    NASA Astrophysics Data System (ADS)

    Park, C. Y.; Lim, J. M.; Yu, J. S.; Lee, Y. T.

    2010-04-01

    We report the structural and antireflective characteristics of catalyst-free GaN nanostructures on GaN/sapphire template for solar cell applications. The formation of GaN nanostructure depends on the growth temperature. At 530 °C, the nucleation of the initial seed due to the enhanced strain leads to the hexagonal closely packed nanorods. As the growth temperature decreases, the depression of atomic Ga transport changes the films into nanocolumns, and then the nanorods. The catalyst-free GaN nanorods have wurtzite structure and good single crystalline quality. The GaN nanorods exhibit a remarkably low reflectance over a wide-angle broadband spectrum, enhancing the antireflective property of GaN surface.

  20. Generation of high-quality petawatt pulses

    SciTech Connect

    Mourou, G; Bado, Philippe

    1991-01-01

    CPA sources need a front-end capable of generating very short seed pulses. To meet this requirement, present CPA sources rely on actively modelocked solid-state oscillators used in conjunction with non-linear fiber stages. This approach generates pulses with a residual frequency chirp, resulting in a limited peak-to-background intensity contrast ratio. The availability of an oscillator capable of producing directly (i.e. without fiber stage) picosecond or sub-picosecond pulses would significantly improve the quality of CPA sources. We have pursued different approaches to replace the standard modelocked oscillator front-end. In an initial phase, we investigated the possible use of Additive Pulse Modelocking (APM) color-center lasers as oscillators for CPA Nd:glass sources. Lately we have developed a Ti:Sapphire modelocked oscillator operating in the one-micron range. In order to generate pulses with very high peak to background contrast ratio, we have built a non-linear coupled-cavity oscillator generating 200-fs pulses. This color-center laser operates in the 1.5--1.6 micron range. A diagram of the oscillator is shown in Fig. 1. The laser is pumped with a modelocked Nd:YAG source. Both KCl and NaCl crystals were tested as gain media. NaCl was found to have a larger tuning range and to generate a higher average power (up to 150 mW). When synchronously mode-locked, the color-center generates pulses in the 10--20 ps range. Once interferometrically coupled to non-linear external-cavity, this oscillator produces very short pulses (85 to 260 fs). This oscillator was first operated with a 2 mm birefringent plate. 85 fs, near transform-limited pulses were generated at 1.54 micron. As the laser was tuned to longer wavelength, the pulse duration increased, as well as the bandwidth-duration product. With a 4 mm birefringent plate, 125 fs, transform-limited pulses were generated over the full tuning range.

  1. Growth of GaN with warm ammonia by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kawaharazuka, A.; Yoshizaki, T.; Ploog, K. H.; Horikoshi, Y.

    2009-03-01

    We demonstrate the growth of GaN by molecular beam epitaxy with warm ammonia as a nitrogen source. Ammonia gas is heated by the tungsten filament located at the open end of the gas-tube installed in the growth chamber. By using this simple structure, the multiple collisions of molecules within the heater, thus the generation of nitrogen molecule, can be suppressed. The crystalline quality of the grown GaN layer is significantly improved by introducing the warm ammonia. This effect can be explained by the enhancement of the two-dimensional growth due to the active nitrogen species such as radical NH2* generated by cracking ammonia molecule.

  2. Simulation of optimum parameters for GaN MSM UV photodetector

    NASA Astrophysics Data System (ADS)

    Alhelfi, Mohanad A.; Ahmed, Naser M.; Hashim, M. R.; Al-Rawi, Ali Amer; Hassan, Z.

    2016-07-01

    In this study the optimum parameters of GaN M-S-M photodetector are discussed. The evaluation of the photodetector depends on many parameters, the most of the important parameters the quality of the GaN film and others depend on the geometry of the interdigited electrode. In this simulation work using MATLAB software with consideration of the reflection and absorption on the metal contacts, a detailed study involving various electrode spacings (S) and widths (W) reveals conclusive results in device design. The optimum interelectrode design for interdigitated MSM-PD has been specified and evaluated by effect on quantum efficiency and responsivity.

  3. Nanopore morphology in porous GaN template and its effect on the LEDs emission

    NASA Astrophysics Data System (ADS)

    Soh, C. B.; Tay, C. B.; Tan, Rayson J. N.; Vajpeyi, A. P.; Seetoh, I. P.; Ansah-Antwi, K. K.; Chua, S. J.

    2013-09-01

    GaN grown on sapphire is electrochemically etched in HF and in KOH. Etching in HF results in a network of nanopillars while that etched in KOH results in a network of pores. The higher density of voids from the network of pores shows the highest strain relaxation for a 1.2 µm thick GaN overgrown on the porous templates. In general, a light-emitting diode (LED) on the porous templates gives about 1.5 times higher intensity and a spectral envelop shift towards the red due to a higher In incorporation. The higher intensity is attributed to enhanced light extraction due to light scattering at the voids formed from the pores and improved material quality with dislocation reduction. The formation of larger overgrowth GaN islands which merges to give a continuous GaN film over the porous template reduced the dislocation density and also accounted for higher strain relaxation for the growth of the quantum dots (QDs) and quantum well layers. This reduced the extent of peak shift of LEDs grown on porous GaN template and improved its performance.

  4. Low temperature inorganic chemical vapor deposition of heteroepitaxial GaN

    NASA Astrophysics Data System (ADS)

    McMurran, Jeffrey; Todd, M.; Kouvetakis, J.; Smith, David J.

    1996-07-01

    We have developed a highly efficient method of growing thin oriented films of GaN on basal plane sapphire and (100) Si substrates using an exclusively inorganic single-source precursor free of carbon and hydrogen. Cross sectional transmission electron microscopy of the highly conformal films revealed columnar material growth on Si and heteroepitaxial columnar growth of crystalline GaN on sapphire. Rutherford backscattering spectroscopy (RBS) of layers grown at 700 °C confirmed stoichiometric GaN. Auger and RBS oxygen and carbon resonance profiles indicated that the films were pure and highly homogeneous. With respect to current chemical vapor deposition processes for GaN growth, our approach offers a number of potentially important improvements. These include high growth rates of 5-350 nm/min, low deposition temperature of 650-700 °C, nearly ideal Ga-N stoichiometry, elimination of the highly inefficient use of toxic ammonia, and a carbon-hydrogen free growth environment that could prove to be beneficial to p-doping processes.

  5. Transport properties, specific heat and thermal conductivity of GaN nanocrystalline ceramic

    SciTech Connect

    Sulkowski, Czeslaw; ChuchmaLa, Andrzej; Zaleski, Andrzej J.; Matusiak, Marcin; Mucha, Jan; GLuchowski, PaweL; Strek, WiesLaw

    2010-10-15

    The structural and transport properties (resistivity, thermopower and Hall effect), specific heat and thermal conductivity have been measured for GaN nanocrystalline ceramic prepared by hot pressing. It was found that the temperature dependence of resistivity in temperature range 10-300 K shows the very low activation energy, which is ascribed to the shallow donor doping originating in amorphous phase of sample. The major charge carriers are electrons, what is indicated by negative sign of Hall constant and Seebeck coefficient. The thermopower attains large values (-58 {mu}V/K at 300 K) and was characterized by linear temperature dependence which suggests the diffusion as a major contribution to Seebeck effect. The high electron concentration of 1.3x10{sup 19} cm{sup -3} and high electronic specific heat coefficient determined to be 2.4 mJ/molK{sup 2} allow to conclude that GaN ceramic demonstrates the semimetallic-like behavior accompanied by very small mobility of electrons ({approx}0.1 cm{sup 2}/V s) which is responsible for its high resistivity. A low heat conductivity of GaN ceramics is associated with partial amorphous phase of GaN grains due to high pressure sintering. - Graphical Abstract: Thermal resistivity and thermopower measurements indicates the high phonon scattering and lack of phonon-drag contribution to thermopower in GaN nanoceramics pressed under 4 GPa at 800 {sup o}C.

  6. Quality.

    ERIC Educational Resources Information Center

    Evans, Judith L.; Schaeffer, Sheldon

    1996-01-01

    This issue of the Coordinator's Notebook focuses on the quality of Early Childhood Care and Development (ECCD) programs. The bulk of the issue is devoted to an article "Quality in ECCD: Everyone's Concern" (Judith Evans), which reviews the need for a definition of high quality in ECCD programs and discusses how diverse stakeholders define quality.…

  7. Lattice-matched HfN buffer layers for epitaxy of GaN on Si

    SciTech Connect

    Armitage, Robert; Yang, Qing; Feick, Henning; Gebauer, Joerg; Weber, Eicke R.; Shinkai, Satoko; Sasaki, Katsutaka

    2002-05-08

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using sputter-deposited hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 (mu)m. Initial results for GaN grown on the (111) surface show a photoluminescence peak width of 17 meV at 11 K, and an asymmetric x-ray rocking curve width of 20 arcmin. Wurtzite GaN on HfN/Si(001) shows reduced structural quality and peculiar low-temperature luminescence features. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  8. Cubic and hexagonal GaN nanoparticles synthesized at low temperature

    NASA Astrophysics Data System (ADS)

    Qaeed, M. A.; Ibrahim, K.; Saron, K. M. A.; Salhin, A.

    2013-12-01

    This study involves a simple and low cost chemical method for the synthesis of Gallium Nitride (GaN) nanoparticles at low temperature. Structural and optical characterizations were carried out using various techniques in order to investigate the properties of the nanoparticles. The Field-Emission Scanning Electron Microscope (FESEM) images showed that the nanoparticles consist of cubic and hexagonal shapes, indicating crystallized structural quality of the GaN nanoparticles. The average size of the nanoparticles was found to be 51 nm. The X-ray Diffraction (XRD) and Raman analysis further confirmed the hexagonal and cubic phases of GaN nanoparticles. The room temperature photoluminescence deduced h-GaN energy gaps of 2.95, 3.12 and 3.13 eV.

  9. Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions

    NASA Astrophysics Data System (ADS)

    Liu, Q. Z.; Lau, S. S.; Perkins, N. R.; Kuech, T. F.

    1996-09-01

    Pd films deposited at room temperature have been found to grow epitaxially on GaN grown by metalorganic vapor phase epitaxy (MOVPE). The Pd films were deposited on GaN substrates cleaned by chemicals only, and in a conventional e-beam evaporation system with a vacuum of ˜1×10-7 Torr. MeV 4He backscattering spectrometry and the Read x-ray camera were used to evaluate the Pd films. The effects of various chemical etchants—such as aqua regia, HCl:H2O, and HF:H2O—on the epitaxial quality of the Pd films have also been investigated. Ni and Pt films deposited on GaN in a similar manner were also found to be epitaxial.

  10. Quality evaluation of extra high quality images based on key assessment word

    NASA Astrophysics Data System (ADS)

    Kameda, Masashi; Hayashi, Hidehiko; Akamatsu, Shigeru; Miyahara, Makoto M.

    2001-06-01

    An all encompassing goal of our research is to develop an extra high quality imaging system which is able to convey a high level artistic impression faithfully. We have defined a high order sensation as such a high level artistic impression, and it is supposed that the high order sensation is expressed by the combination of the psychological factor which can be described by plural assessment words. In order to pursue the quality factors that are important for the reproduction of the high order sensation, we have focused on the image quality evaluation of the extra high quality images using the assessment words considering the high order sensation. In this paper, we have obtained the hierarchical structure between the collected assessment words and the principles of European painting based on the conveyance model of the high order sensation, and we have determined a key assessment word 'plasticity' which is able to evaluate the reproduction of the high order sensation more accurately. The results of the subjective assessment experiments using the prototype of the developed extra high quality imaging system have shown that the obtained key assessment word 'plasticity' is the most appropriate assessment word to evaluate the image quality of the extra high quality images quasi-quantitatively.

  11. Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method

    PubMed Central

    2011-01-01

    Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber. The origin of cracks in a 22-μm thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD), micro-Raman spectra, and scanning electron microscopy (SEM). Many cracks under the surface were first observed by SEM after etching for 10 min. By investigating the cross section of the sample with high-resolution micro-Raman spectra, the distribution of the stress along the depth was determined. From the interface of the film/substrate to the top surface of the film, several turnings were found. A large compressive stress existed at the interface. The stress went down as the detecting area was moved up from the interface to the overlayer, and it was maintained at a large value for a long depth area. Then it went down again, and it finally increased near the top surface. The cross-section of the film was observed after cleaving and etching for 2 min. It was found that the crystal quality of the healed part was nearly the same as the uncracked region. This indicated that cracking occurred in the growth, when the tensile stress accumulated and reached the critical value. Moreover, the cracks would heal because of high lateral growth rate. PMID:21711601

  12. Spin and phase relaxation dynamics in GaN and GaN/AlGaN quantum wells (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Gallart, Mathieu; Ziegler, Marc; Hönerlage, Bernd H.; Gilliot, Pierre; Feltin, Eric; Carlin, Jean-François; Butté, Raphaël.; Grandjean, Nicolas

    2015-09-01

    By performing time-resolved optical non-degenerate pump-probe experiments, we study the relaxation dynamics of spin-polarized excitons in wurtzite epitaxial GaN and in nitride nanostructures. Those materials are indeed promising candidates for spintronic applications because of their weak spin-orbit coupling and large exciton binding energy (~ 17 meV and ~ 26meV in bulk GaN, respectively). In epilayers, we show that the high density of dislocations increases dramatically the spin relaxation of electrons and holes through the defect assisted Elliott-Yafet mechanism. That makes the exciton dephasing time very short. In high quality GaN/AlGaN quantum wells, both the exciton-spin lifetime S and the exciton dephasing-time T2 were determined via pump-probe spectroscopy using polarized laser pulses and time-resolved four wave-mixing experiments. The evolution of both quantities with temperature shows that spin relaxation occurs in the motional narrowing regime up to 80 K. Above this threshold, the thermal energy becomes large enough for excitons to escape from the QW. Such measurements demonstrate that GaN-based heterostructures can reach a very high degree of control that was previously mostly restricted to conventional III-V semiconductors and more specifically to the arsenide family.

  13. Quality Assurance Strategy for Existing Homes. Final Quality Management Primer for High Performing Homes

    SciTech Connect

    Del Bianco, M.; Taggart, J.; Sikora, J.; Wood, A.

    2012-12-01

    This guide is designed to help Building America (BA) teams understand quality management and its role in transitioning from conventional to high performance home building and remodeling. It explains what quality means, the value of quality management systems, the unique need for QMS when building high performing homes, and the first steps to a implementing a comprehensive QMS. This document provides a framework and context for BA teams when they encounter builders and remodelers.

  14. Quality Assurance Strategy for Existing Homes: Final Quality Management Primer for High Performing Homes

    SciTech Connect

    Del Bianco, M.; Taggart, J.; Sikora, J.; Wood, A.

    2012-12-01

    This guide is designed to help Building America (BA) Teams understand quality management and its role in transitioning from conventional to high performance home building and remodeling. It explains what quality means, the value of quality management systems, the unique need for QMS when building high performing homes, and the first steps to a implementing a comprehensive QMS. This document provides a framework and context for BA teams when they encounter builders and remodelers.

  15. Strategies that promote high quality care in Indonesia

    PubMed Central

    Gertler, Paul J.

    2009-01-01

    Objectives To investigate factors predicting the quality of care received using a nationally representative dataset from Indonesia. Data Sources The study combines two surveys in 13 provinces: a household survey of 2451 women who delivered a live birth in 1992-1998, and a facility survey that measured quality available from outpatient providers. Study design Multivariate regressions are used to explain the quality of care received. Explanatory variables are high facility quality, maternal education, household wealth, ethnicity, and insurance. Data collection methods Facility quality available is measured by adherence to prenatal protocols using a clinical case scenario. Quality received is measured by maternal reports about routine prenatal services received. Principle findings High facility quality predicts an increase in quality received. Although poor households have access to the same or higher quality care compared with the least poor, the poor receive lower levels of quality. In remote regions, quality received rises with increasing levels of maternal education and household wealth. Conclusions Improving health provider knowledge, and increasing household financial resources and information could redress inequalities in quality received among the poor and least educated. PMID:18501988

  16. Positron annihilation in AlN and GaN

    NASA Astrophysics Data System (ADS)

    Arutyunov, N. Yu.; Emtsev, V. V.; Mikhailin, A. V.; Davidov, V. Yu.

    2001-12-01

    The measurements of one-dimensional angular correlation of the annihilation radiation (1D-ACAR) have been carried out for AlN and GaN as well as for some related materials (Al, Ga, GaP, GaAs, GaSb) which have been used as samples of references the analysis of results. The numeral values of characteristic length of radius of spherical volume to be occupied by annihilating electron ( rs‧) have differed significantly from the corresponding values ( rs) calculated by the conventional independent-particle-model (IPM) for ideal Fermi-gas: rs‧ (AlN)≃1.28 rs, where rs (AlN)≃1.61 a.u., and rs‧ (GaN)≃1.66 rs, where rs (GaN)≃1.64 a.u. The electron-positron “ion radii” reconstructed by the high-momentum components (HMC) of 1D-ACAR for Al 3+, Ga 3+ cores as well as numeral rs‧ values provide some reasons to believe that Ga- and Al-vacancies and their impurity complexes are effective centers of the positron localization in AlN and GaN; it is assumed that these complexes include V Ga, V Al, and N atom (V Ga-N Ga in GaN and V Al-N Al in AlN) where the nitrogen atom is likely to be in the configuration of substitution (anti-site), N +Ga and N +Al, respectively.

  17. Toward automatic recognition of high quality clinical evidence.

    PubMed

    Kilicoglu, Halil; Demner-Fushman, Dina; Rindflesch, Thomas C; Wilczynski, Nancy L; Haynes, R Brian

    2008-01-01

    Automatic methods for recognizing topically relevant documents supported by high quality research can assist clinicians in practicing evidence-based medicine. We approach the challenge of identifying articles with high quality clinical evidence as a binary classification problem. Combining predictions from supervised machine learning methods and using deep semantic features, we achieve 73.5% precision and 67% recall. PMID:18998881

  18. High-Quality Curriculum: A Lesson in Collaboration

    ERIC Educational Resources Information Center

    Beasley, Jennifer G.

    2012-01-01

    The Curriculum Studies Network focuses on promoting and creating high-quality curriculum to meet the needs of academically advanced learners. Staff at Curriculum Studies Network are proud of the collaboration they promote among educators, but in order for high-quality curriculum to continue to be the standard in the field, they realize the…

  19. Inequality in Preschool Quality? Community-Level Disparities in Access to High-Quality Learning Environments

    ERIC Educational Resources Information Center

    Bassok, Daphna; Galdo, Eva

    2016-01-01

    In recent years, unequal access to high-quality preschool has emerged as a growing public policy concern. Because of data limitations, it is notoriously difficult to measure disparities in access to early learning opportunities across communities and particularly challenging to quantify gaps in access to "high-quality" programs. Research…

  20. UV-Photoassisted Etching of GaN in KOH

    SciTech Connect

    Abernathy, C.R.; Auh, K.H.; Cho, H.; Donovan, S.M.; Han, J.; Lambers, E.S.; Pearton, S.J.; Ren F.; Shul, R.J.

    1998-11-12

    The etch rate of GaN under W-assisted photoelectrochemical conditions in KOH solutions is found to be a strong function of illumination intensity, solution molarity, sample bias and material doping level. At low e-h pair generation rates, grain boundaries are selectively etched, while at higher illumination intensities etch rates for unintentionally doped (n - 3x 10^12Gcm-3) GaN are 2 1000 .min-l. The etching is diffusion limited under our conditions with an activation energy of - 0.8kCal.mol-1. The etched surfaces are rough, but retain their stoichiometry. PEC etching is found to selectively reveal grain boundaries in GaN under low light illumination conditions. At high lamp powers the rates increase with sample temperature and the application of bias to the PEC cell, while they go through a maximum with KOH solution molarity. The etching is diffusion-limited, producing rough surface morphologies that are suitable in a limited number of device fabrication steps. The surfaces however appear to remain relatively close to their stoichiometric composition.

  1. Epitaxially-Grown GaN Junction Field Effect Transistors

    SciTech Connect

    Baca, A.G.; Chang, P.C.; Denbaars, S.P.; Lester, L.F.; Mishra, U.K.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-05-19

    Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (gm) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 µ m gate JFET device at VGS= 1 V and VDS=15 V. The intrinsic transconductance, calculated from the measured gm and the source series resistance, is 81 mS/mm. The fT and fmax for these devices are 6 GHz and 12 GHz, respectively. These JFETs exhibit a significant current reduction after a high drain bias is applied, which is attributed to a partially depleted channel caused by trapped hot-electrons in the semi-insulating GaN buffer layer. A theoretical model describing the current collapse is described, and an estimate for the length of the trapped electron region is given.

  2. Metal contacts on ZnSe and GaN

    SciTech Connect

    Duxstad, K J

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  3. Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

    SciTech Connect

    Greenlee, Jordan D.; Feigelson, Boris N.; Anderson, Travis J.; Hite, Jennifer K.; Mastro, Michael A.; Eddy, Charles R.; Hobart, Karl D.; Kub, Francis J.; Tadjer, Marko J.

    2014-08-14

    The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200 °C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N{sub 2} overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at half maximums of the E{sub 2} and A{sub 1} (LO) Raman modes. The crystal quality of films annealed above 1100 °C exceeds the quality of the as-grown films. At 1200 °C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200 °C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150 °C due to crystal quality and surface morphology considerations.

  4. Piezo-generator integrating a vertical array of GaN nanowires.

    PubMed

    Jamond, N; Chrétien, P; Houzé, F; Lu, L; Largeau, L; Maugain, O; Travers, L; Harmand, J C; Glas, F; Lefeuvre, E; Tchernycheva, M; Gogneau, N

    2016-08-12

    We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ∼12.7 mW cm(-3). This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters. PMID:27363777

  5. Piezo-generator integrating a vertical array of GaN nanowires

    NASA Astrophysics Data System (ADS)

    Jamond, N.; Chrétien, P.; Houzé, F.; Lu, L.; Largeau, L.; Maugain, O.; Travers, L.; Harmand, J. C.; Glas, F.; Lefeuvre, E.; Tchernycheva, M.; Gogneau, N.

    2016-08-01

    We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ∼12.7 mW cm‑3. This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters.

  6. GaN Epitaxial Layer Grown with Conductive Al(x)Ga(1-x)N Buffer Layer on SiC Substrate Using Metal Organic Chemical Vapor Deposition.

    PubMed

    So, Byeongchan; Lee, Kyungbae; Lee, Kyungjae; Heo, Cheon; Pyeon, Jaedo; Ko, Kwangse; Jang, Jongjin; Nam, Okhyun

    2016-05-01

    This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0% to 100%. In terms of the crystal quality of the GaN layer, 79% Al was the optimal composition of the Al(x)Ga(1-x)N buffer layer in our experiment. A vertical conductive structure was fabricated to measure the current voltage (I-V) characteristics as a function of Al composition, and the I-V curves showed that the resistance increased with increasing Al concentration of the Al(x)Ga(1-x)N buffer layer. PMID:27483845

  7. Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

    SciTech Connect

    Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined

  8. Total quality management: A management philosophy for providing high quality construction

    NASA Astrophysics Data System (ADS)

    Beckwith, Paul D.

    Total Quality Management (TQM) is not a new concept. Only recently (within the past ten years or so) have American companies started to realize the potential of TQM as a means of ensuring high quality products and services. With this realization has come implementation in manufacturing and service companies. A commercial construction company, like any other business, must provide a top quality finished product to its customer if it intends to stay in business. TQM is one way to work to that end. This report explores the quality problems facing my fictitious construction company, which I believe are fairly typical among the commercial construction industry, existing management methods, and the TQM method to ensure top quality production. It will be shown why I believe TQM or a variation thereof is the best method for controlling the quality of products and service during the construction process. Under the philosophy of TQM, we build quality into the finished product.

  9. High-quality work, job satisfaction, and occupational injuries.

    PubMed

    Barling, Julian; Kelloway, E Kevin; Iverson, Roderick D

    2003-04-01

    The authors investigated whether and how 1 element of a high-performance work system, namely high-quality jobs (composed of extensive training, variety, and autonomy), affects occupational injuries. On the basis of data from the Australian WIRS95 database (N = 16,466; Department of Workplace Relations and Small Business, 1997), high-quality jobs exerted a direct effect on injuries and an indirect effect through the mediating influence of job satisfaction. Conceptual, methodological, and practical issues are discussed. PMID:12731711

  10. Boiler for generating high quality vapor

    NASA Technical Reports Server (NTRS)

    Gray, V. H.; Marto, P. J.; Joslyn, A. W.

    1972-01-01

    Boiler supplies vapor for use in turbines by imparting a high angular velocity to the liquid annulus in heated rotating drum. Drum boiler provides a sharp interface between boiling liquid and vapor, thereby, inhibiting the formation of unwanted liquid droplets.

  11. Highly Integrated Quality Assurance – An Empirical Case

    SciTech Connect

    Drake Kirkham; Amy Powell; Lucas Rich

    2011-02-01

    Highly Integrated Quality Assurance – An Empirical Case Drake Kirkham1, Amy Powell2, Lucas Rich3 1Quality Manager, Radioisotope Power Systems (RPS) Program, Idaho National Laboratory, P.O. Box 1625 M/S 6122, Idaho Falls, ID 83415-6122 2Quality Engineer, RPS Program, Idaho National Laboratory 3Quality Engineer, RPS Program, Idaho National Laboratory Contact: Voice: (208) 533-7550 Email: Drake.Kirkham@inl.gov Abstract. The Radioisotope Power Systems Program of the Idaho National Laboratory makes an empirical case for a highly integrated Quality Assurance function pertaining to the preparation, assembly, testing, storage and transportation of 238Pu fueled radioisotope thermoelectric generators. Case data represents multiple campaigns including the Pluto/New Horizons mission, the Mars Science Laboratory mission in progress, and other related projects. Traditional Quality Assurance models would attempt to reduce cost by minimizing the role of dedicated Quality Assurance personnel in favor of either functional tasking or peer-based implementations. Highly integrated Quality Assurance adds value by placing trained quality inspectors on the production floor side-by-side with nuclear facility operators to enhance team dynamics, reduce inspection wait time, and provide for immediate, independent feedback. Value is also added by maintaining dedicated Quality Engineers to provide for rapid identification and resolution of corrective action, enhanced and expedited supply chain interfaces, improved bonded storage capabilities, and technical resources for requirements management including data package development and Certificates of Inspection. A broad examination of cost-benefit indicates highly integrated Quality Assurance can reduce cost through the mitigation of risk and reducing administrative burden thereby allowing engineers to be engineers, nuclear operators to be nuclear operators, and the cross-functional team to operate more efficiently. Applicability of this case

  12. Measurement of the electrostatic edge effect in wurtzite GaN nanowires

    SciTech Connect

    Henning, Alex; Rosenwaks, Yossi; Klein, Benjamin; Bertness, Kris A.; Blanchard, Paul T.; Sanford, Norman A.

    2014-11-24

    The electrostatic effect of the hexagonal corner on the electronic structure in wurtzite GaN nanowires (NWs) was directly measured using Kelvin probe force microscopy (KPFM). By correlating electrostatic simulations with the measured potential difference between the nanowire face and the hexagonal vertices, the surface state concentration and band bending of GaN NWs were estimated. The surface band bending is important for an efficient design of high electron mobility transistors and for opto-electronic devices based on GaN NWs. This methodology provides a way to extract NW parameters without making assumptions concerning the electron affinity. We are taking advantage of electrostatic modeling and the high precision that KPFM offers to circumvent a major source of uncertainty in determining the surface band bending.

  13. Lithographically defined carbon growth templates for ELOG of GaN

    NASA Astrophysics Data System (ADS)

    Burckel, D. B.; Fan, Hongyou; Thaler, G.; Koleske, D. D.

    2008-06-01

    We report the initial use of lithographically defined carbon growth templates for use as an epitaxial lateral overgrowth (ELOG) mask for metalorganic chemical vapor deposition (MOCVD) heteroepitaxial GaN on sapphire. Interferometric lithography is used to define high aspect ratio structures in SU-8, which are then pyrolyzed in a reducing atmosphere up to 1200 °C. The resist structures convert to amorphous carbon, shrinking 80% in the vertical direction and 53% in the horizontal direction, but maintain their pattern geometry and adhesion to the substrate. These templates are capable of surviving GaN nucleation layer growth temperatures (˜530 °C), GaN crystal growth and high-temperature annealing up to 1050 °C. This new approach to ELOG offers several advantages, requiring fewer processing steps, and favorable selectivity tendencies as well as the capability to create growth masks which are difficult or impossible to fabricate using a top-down etching approach.

  14. Photoinduced conversion of methane into benzene over GaN nanowires.

    PubMed

    Li, Lu; Fan, Shizhao; Mu, Xiaoyue; Mi, Zetian; Li, Chao-Jun

    2014-06-01

    As a class of key building blocks in the chemical industry, aromatic compounds are mainly derived from the catalytic reforming of petroleum-based long chain hydrocarbons. The dehydroaromatization of methane can also be achieved by using zeolitic catalysts under relatively high temperature. Herein we demonstrate that Si-doped GaN nanowires (NWs) with a 97% rationally constructed m-plane can directly convert methane into benzene and molecular hydrogen under ultraviolet (UV) illumination at rt. Mechanistic studies suggest that the exposed m-plane of GaN exhibited particularly high activity toward methane C-H bond activation and the quantum efficiency increased linearly as a function of light intensity. The incorporation of a Si-donor or Mg-acceptor dopants into GaN also has a large influence on the photocatalytic performance. PMID:24826797

  15. Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions

    NASA Astrophysics Data System (ADS)

    Aseev, P.; Gačević, Ž.; Torres-Pardo, A.; González-Calbet, J. M.; Calleja, E.

    2016-06-01

    Series of GaN nanowires (NW) with controlled diameters (160-500 nm) and heights (420-1100 nm) were homoepitaxially grown on three different templates: GaN/Si(111), GaN/AlN/Si(111), and GaN/sapphire(0001). Transmission electron microscopy reveals a strong influence of the NW diameter on dislocation filtering effect, whereas photoluminescence measurements further relate this effect to the GaN NWs near-bandgap emission efficiency. Although the templates' quality has some effects on the GaN NWs optical and structural properties, the NW diameter reduction drives the dislocation filtering effect to the point where a poor GaN template quality becomes negligible. Thus, by a proper optimization of the homoepitaxial GaN NWs growth, the propagation of dislocations into the NWs can be greatly prevented, leading to an exceptional crystal quality and a total dominance of the near-bandgap emission over sub-bandgap, defect-related lines, such as basal stacking faults and so called unknown exciton (UX) emission. In addition, a correlation between the presence of polarity inversion domain boundaries and the UX emission lines around 3.45 eV is established.

  16. The Equitable Distribution of High-Quality Teachers

    ERIC Educational Resources Information Center

    Bumgardner, Stan

    2010-01-01

    A new report by the National Comprehensive Center for Teacher Quality (TQ Center) highlights efforts across the nation to address a key point in the No Child Left Behind law and the American Recovery and Reinvestment Act (ARRA)--the equitable distribution of high-quality teachers across all schools. Research consistently has pointed to effective…

  17. Can high quality cane be delivered to the mill economically

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Cane quality is becoming increasingly important to the Louisiana sugarcane industry, with some processors offering premiums for high quality cane. Using a Cameco® 3500, we tested ground speeds of 2.5, 3.0, and 3.5 mph and fan speeds of 650, 850, and 1050 rpm. Ground speed had no effect on can...

  18. Thermal Conductivity of GaN Nanotubes Simulated by Nonequilibrium Molecular Dynamics

    SciTech Connect

    Wang, Zhiguo; Gao, Fei; Crocombette, J.-P.; Zu, Xiaotao; Yang, Li; Weber, William J.

    2007-04-15

    Thermal conductivity of GaN nanotubes along the tube axis is investigated over the temperature range of 600K-2300K using homogeneous nonequilibrium molecular dynamics. In general, the thermal conductivity of nanotubes is smaller than that for the bulk GaN single crystal. The thermal conductivity is also found to decrease with temperature and increase with increasing wall thickness of the nanotubes. The change of phonon spectrum and surface inelastic scattering may account for the reduction of thermal conductivity in the nanotubes, while thermal softening and high frequency phonon interactions at high temperatures may provide an explanation for its decrease with increasing temperature.

  19. Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Yoo, Jinyeop; Shojiki, Kanako; Tanikawa, Tomoyuki; Kuboya, Shigeyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi

    2016-05-01

    We report on the polarity control of GaN regrown on pulsed-laser-deposition-grown N-polar AlN on a metalorganic-vapor-phase-epitaxy-grown Ga-polar GaN template. The polarity of the regrown GaN, which was confirmed using aqueous KOH solutions, can be inverted from that of AlN by inserting a low-temperature GaN (LT-GaN) buffer layer. We hypothetically ascribe the Ga-polarity selection of GaN on the LT-GaN buffer layer to the mixed polarity of LT-GaN grains and higher growth rate of the Ga-polar grain, which covers up the N-polar grain during the initial stage of the high-temperature growth. The X-ray rocking curve analysis revealed that the edge-dislocation density in the N-polar regrown GaN is 5 to 8 times smaller than that in the Ga-polar regrown GaN. N-polar GaN grows directly on N-polar AlN at higher temperatures. Therefore, nucleus islands grow larger than those of LT-GaN and the area fraction of coalescence boundaries between islands, where edge dislocations emerge, becomes smaller.

  20. Photoluminescence of GaN Film Exposed to Chlorine-Containing Plasma

    NASA Astrophysics Data System (ADS)

    Ogawa, Daisuke; Banno, Yoshitsugu; Nakano, Yoshitaka; Nakamura, Keiji

    2015-09-01

    Gallium nitride (GaN) has been an attractive semiconductor material for the application to not only light emitting diodes, but also high power devices. The advantage of the material is that it can be fabricated to maximize the number density of devices a single wafer. In our current technology, we mainly utilize low-temperature plasma for dry etching. In fact, GaN generally requires chlorine-containing plasma for chemical etching. However, the use of plasma has a drawback that can induce unwanted changes on the fabricating devices in some conditions. This is called as plasma-induced damage (PID). We have so far monitored the development of PIDs with photoluminescence (PL) emitted from the GaN surface during argon plasma process. In this time, we exposed a GaN film to chlorine-containing plasma and monitored the PID development. Our PL measurements show that the chlorine-containing plasma almost gave no change in PL property of GaN, while argon plasma gave drastic changes. This is because the speed of etching by chlorine species was faster than the speed of damage creations by plasma. In this presentation, we will show further results of this experiment along with some analyses for the purpose of industrial application.

  1. Synthesis, microstructure, and cathodoluminescence of [0001]-oriented GaN nanorods grown on conductive graphite substrate.

    PubMed

    Yuan, Fang; Liu, Baodan; Wang, Zaien; Yang, Bing; Yin, Yao; Dierre, Benjamin; Sekiguchi, Takashi; Zhang, Guifeng; Jiang, Xin

    2013-11-27

    One-dimensional GaN nanorods with corrugated morphology have been synthesized on graphite substrate without the assistance of any metal catalyst through a feasible thermal evaporation process. The morphologies and microstructures of GaN nanorods were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The results from HRTEM analysis indicate that the GaN nanorods are well-crystallized and exhibit a preferential orientation along the [0001] direction with Ga(3+)-terminated (101̅1) and N(3-)-terminated (101̅1̅) as side facets, finally leading to the corrugated morphology surface. The stabilization of the electrostatic surface energy of {101̅1} polar surface in a wurtzite-type hexagonal structure plays a key role in the formation of GaN nanorods with corrugated morphology. Room-temperature cathodoluminescence (CL) measurements show a near-band-edge emission (NBE) in the ultraviolet range and a broad deep level emission (DLE) in the visible range. The crystallography and the optical emissions of GaN nanorods are discussed. PMID:24164686

  2. Properties of Gallium Disorder and Gold Implants in GaN

    SciTech Connect

    Jiang, Weilin; Weber, William J.; Thevuthasan, Suntharampillai; Shutthanandan, V; DB Poker, SC Moss, K-H Heinig

    2001-04-25

    Epitaxial single-crystal GaN films on sapphire were implanted 60? off the <0001> surface normal with 1 MeV Auor 3 MeV Au over a fluence range from 0.88 to 86.2 ions/nm2 at 180 and 300 K. The implantation damage was studied in-situ using 2 MeV He Rutherford backscattering spectrometry in channeling geometry (RBS/C). The disordering rate in the near-surface region is faster than at the damage peak. In all cases, results show an intermediate stage of Ga disorder saturation at the damage peak. Migration of Au implants in GaN is observed during ion implantation at 300 K. As a result of thermal annealing at 870 K for 20 min, some Au implants in GaN diffuse into the amorphized surface region, while the remaining Au atoms distribute around the mean ion-projected-range. These results suggest a high mobility of both Ga defects and Au implants in GaN. Deeper damage implantation by 3 MeV Au indicates that GaN cannot be completely amorphized up to the highest ion fluence (86.2 ions/nm) applied at 300 K.

  3. Distribution of the lateral correlation length in GaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Kozlowski, J.; Paszkiewicz, R.; Korbutowicz, R.; Tlaczala, M.

    2001-12-01

    GaN structures belong to the most popular wide-bandgap semiconductors. Large lattice mismatch existing between the layer and substrates (3.5% for SiC and even 16% in the case of sapphire substrate) results in structures with a large number of defects. The typical GaN epitaxial layer consists of dislocation-free regions with lateral dimensions equal to a few hundred nanometers. The dislocation density changes from 10 8 cm -2 inside the grains to 10 10 cm -2 in the grain boundaries. The average value of the lateral correlation lengths (coherence wavelength) seems to be not quite satisfactory. Particularly, it is connected with lateral direction, because the vertical length is approximately equal to the thickness of the epitaxial layer. This paper presents the new approach for the determination of GaN crystallites dislocation-free block size distributions. This method is based on the X-ray peak profile analysis and solution of the Fredholm integral equation. The necessary peaks are obtained from the high-resolution X-ray diffractometry measurements. The obtained results have been shown for the various samples: GaN layers grown on low temperature buffer layer (GaN or AlN). Very interesting results were obtained in the first case, where two different sizes of the blocks appear.

  4. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

    SciTech Connect

    Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

    2013-12-02

    The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T{sub g}) and T{sub g} ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T{sub g} on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T{sub g} (800 °C) GaN films grown under QB conditions were compared to deep level spectra of high T{sub g} (1150 °C) GaN. Reducing T{sub g}, increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09 eV and 2.9 eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T{sub g} substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T{sub g} GaN growth to active layer growth can mitigate such non-radiative channels.

  5. Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates

    NASA Astrophysics Data System (ADS)

    Ishikawa, Hiroyasu; Shimanaka, Keita

    2011-01-01

    We report a novel growth technique of GaN films on Si substrates using a metalorganic chemical vapor deposition. First, Ga droplets are deposited on a Si substrate by feeding trimethylgallium. And then the substrate is heated at 1080 °C, resulting in the formation of recesses on its surface by meltback etching. Finally, a GaN film is grown on the Ga-induced meltback-etched surface using a high-temperature-grown AlN intermediate layer. After the growth of the GaN film, 0.5-1-μm-diameter pits were observed on the GaN surface. A cathodoluminescence image reveals that low-threading-dislocation-density regions were successfully grown around the pits.

  6. InGaN light emitting diodes with a nanopipe layer formed from the GaN epitaxial layer.

    PubMed

    Hsu, Wei-Ju; Chen, Kuei-Ting; Huang, Wan-Chun; Wu, Chia-Jung; Dai, Jing-Jie; Chen, Sy-Hann; Lin, Chia-Feng

    2016-05-30

    A Si-heavy doped GaN:Si epitaxial layer is transformed into a directional nanopipe GaN layer through a laser-scribing process and a selectively electrochemical (EC) etching process. InGaN light-emitting diodes (LEDs) with an EC-treated nanopipe GaN layer have a high light extraction efficiency. The direction of the nanopipe structure was directed perpendicular to the laser scribing line and was guided by an external bias electric field. An InGaN LED structure with an embedded nanopipe GaN layer can enhance external quantum efficiency through a one-step epitaxial growth process and a selective EC etching process. A birefringence optical property and a low effective refractive index were observed in the directional-nanopipe GaN layer. PMID:27410087

  7. Cross-Disciplinary Physics and Related Areas of Science and Technology: Fabrication of Mn-Doped GaN Nanobars

    NASA Astrophysics Data System (ADS)

    Xue, Cheng-Shan; Liu, Wen-Jun; Shi, Feng; Zhuang, Hui-Zhao; Guo, Yong-Fu; Cao, Yu-Ping; Sun, Hai-Bo

    2010-03-01

    We report a new method for large-scale production of GaMnN nanobars, by ammoniating Ga2O3 films doped with Mn under flowing ammonia atmosphere at 1000° C. The Mn-doped GaN sword-like nanobars are a single-crystal hexagonal structure, containing Mn up to 5.43 atom%. Thickness is about 100 nm and with a width of 200-400 nm. The nanobars are characterized by x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and photoluminescence. The GaN nanobars show two emission bands with a well-defined PL peak at 388 nm and 409 nm respectively. The large distinct redshift (409 nm) are comparable to pure GaN(370 nm) at room temperature. The red-shift photoluminescence is due to Mn doping. The growth mechanism of crystalline GaN nanobars is discussed briefly.

  8. The origin of yellow band emission and cathodoluminescence of Au-catalyzed wurtzite GaN nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, R. S.; Jiao, J. F.; Wu, X.

    2016-06-01

    GaN nanowires with large yield are directly synthesized by simply ammoniating the gallium oxide powders in the presence of ammonia gas at 1000 °C, under the assistance of Au nanocatalysts. The microstructure and crystallinity of as-synthesized GaN nanowires are well studied by using high-resolution transmission electron microscope (HRTEM) and some structural defects such as stacking faults are found in the GaN nano-crystal. Cathodoluminescence measurement shows that a strong near-band-edge (NBE) emission band centered at 384 nm and a broad yellow band in the range of 500-800 nm are observed. Finally, the growth mechanism and possible optical emission process of GaN nanowires are discussed.

  9. Mosaic Structure Evolution in GaN Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Chen, Zhi-Tao; Xu, Ke; Guo, Li-Ping; Yang, Zhi-Jian; Pan, Yao-Bo; Su, Yue-Yong; Zhang, Han; Shen, Bo; Zhang, Guo-Yi

    2006-05-01

    We investigate mosaic structure evolution of GaN films annealed for a long time at 800°C grown on sapphire substrates by metalorganic chemical vapour deposition by high-resolution x-ray diffraction. The result show that residual stress in GaN films is relaxed by generating edge-type threading dislocations (TDs) instead of screw-type TDs. Compared to as-grown GaN films, the annealed ones have larger mean twist angles corresponding to higher density of edge-type TDs but smaller mean tilt angles corresponding to lower density of screw-type TDs films. Due to the increased edge-type TD density, the lateral coherence lengths of the annealed GaN films also decrease. The results obtained from chemical etching experiment and grazing-incidence x-ray diffraction (GIXRD) also support the proposed structure evolution.

  10. Growth behavior of GaN nanowires on c-plane sapphire substrate by applying various catalysts

    NASA Astrophysics Data System (ADS)

    Kuppulingam, B.; Bhalerao, G. M.; Singh, Shubra; Baskar, K.

    2016-07-01

    Systematic reaction has been used to control the vapor-liquid-solid growth of gallium nitride nanowires (NWs) using different catalysts. GaN NWs were grown using Cu, Au, Pd/Au alloy catalysts on c-plane sapphire substrate. XRD and Raman analysis revealed the crystalline wurtzite phase of GaN synthesized at 900 °C. High density GaN NWs were studied using SEM and HRTEM. Elemental composition and impurities were analyzed by EDX. Diameter of individual NW, grown using Au catalyst is found to be ~50 nm. The diameter of NWs grown with the help of Cu catalyst was found to be ˜65 nm, whereas with Pd/Au catalyst, the diameter was about 100-200 nm. NBE emission observed from PL spectra for Cu catalyst (377 nm), Au catalyst (372 nm) as well as Pd/Au catalyst (385 nm) growth of GaN NWs respectively has been presented and discussed.

  11. Effect of substrate nitridation temperature on the persistent photoconductivity of unintentionally-doped GaN layer grown by PAMBE

    NASA Astrophysics Data System (ADS)

    Prakash, Nisha; Choursia, B.; Barvat, Arun; Anand, Kritika; Kushvaha, S. S.; Singh, V. N.; Pal, Prabir; Khanna, Suraj P.

    2016-05-01

    The surface roughness and defect density of GaN epitaxial layers grown on c-plane sapphire substrate are investigated and found to be dependent on nitridation temperature. GaN epitaxial layers grown after nitridation of sapphire at 200°C have a higher defect density and higher surface roughness compared to the GaN layers grown at 646°C nitridation as confirmed by atomic force microscopy (AFM). The persistent photoconductivity (PPC) was observed in both samples and it was found to be decreasing with decreasing temperature in the range 150-300°C due to long carrier lifetime and high electron mobility at low temperature. The photoresponse of the GaN films grown in this study exhibit improved PPC due to their better surface morphology at 646°C nitrided sample. The point defects or extended microstructure defects limits the photocarrier lifetime and electron mobility at 200°C nitrided sample.

  12. Lateral transport properties of Nb-doped rutile- and anatase-TiO2 films epitaxially grown on c-plane GaN

    NASA Astrophysics Data System (ADS)

    Hazu, K.; Ohtomo, T.; Nakayama, T.; Tanaka, A.; Chichibu, S. F.

    2012-08-01

    Valence-band offsets for Nb-doped (100) rutile (R-TiO2) epilayer on (0001) GaN and (001) anatase (A-TiO2) epilayer mixed with R-TiO2 on (0001) GaN were determined using x-ray photoelectron spectroscopy to be +0.2 eV and +0.6 eV, respectively. Accordingly, they form type-I and type-II heterojunctions, respectively. The electron mobility as high as 260 cm2 V-1 s-1 was measured for the A(+R)-TiO2:Nb epilayer on undoped GaN, which is quantitatively explained in terms of electron accumulation at the interfacial region of GaN. The intrinsic mobility of approximately 30 cm2 V-1 s-1 at 300 K was obtained for the A(+R)-TiO2:Nb epilayer grown on a p-type GaN.

  13. Sub-230 nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski–Krastanov mode

    NASA Astrophysics Data System (ADS)

    Islam, SM; Protasenko, Vladimir; Rouvimov, Sergei; (Grace Xing, Huili; Jena, Debdeep

    2016-05-01

    We report tunable deep-ultraviolet (DUV) emission over the 222–231 nm range from 1–2 monolayer (ML) GaN quantum disks (QDs) grown in an AlN matrix. The linewidth of the emission were as narrow as ∼10 nm at 5 K. The disks were grown in modified Stranski–Krastanov (mSK) mode. High resolution scanning transmission electron microscopy (STEM) images confirmed insertion of 1–2 MLs of GaN between 3 nm AlN barriers. The internal quantum efficiency was estimated from low temperature photoluminescence measurements for the disks, and compared with 1 and 2 ML GaN quantum wells/AlN barriers. The internal quantum efficiency (IQE) of the GaN QDs was found to be ∼35% for 222 nm emission, ∼200% higher than 1 ML GaN QWs.

  14. High quality transparent conducting oxide thin films

    DOEpatents

    Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

    2012-08-28

    A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

  15. [Toward a high quality glaucoma care].

    PubMed

    Kashiwagi, Kenji

    2012-03-01

    The following studies were performed to solve current problems in glaucoma care and to pursue quality glaucoma care. Using a scanning peripheral anterior chamber depth analyzer that we developed, we: 1) conducted cross-sectional screening for eyes with angle closure; 2) examined longitudinal changes in anterior chamber depth and occurrence rates of primary angle closure in local senior residents; 3) investigated the significance of the anterior chamber and the angle of eyes with open angle glaucoma; and 4) looked into possible applications of anterior chamber depth and the angle in routine examinations. We investigated the effects of retinal glial cells and optic nerve astrocytes on retinal ganglion cell (RGC) survival and neurite growth using a culture system. We also identified candidate genies of retinal glial cells and optic nerve astrocytes affecting RGC survival and neurite growth using microarray and siRNA systems. SRC, a membrane-associated 60-kDa tyrosine kinase, is reported to be involved in neuron death and neurite growth. We developed two types of gene-targeted mice in which we modified the status of SRC phosphorylation. We compared RGC survival and neurite growth by conducting in vivo and in vitro experiments. Adherence is currently a very important issue in the field of glaucoma. We developed a nm thick and composed of 21.5 chitosan-sodium alginate pairs. IOP reduction and its duration, as well as adverse effects, were investigated. In addition, we established and evaluated a support system for glaucoma care in an effort to promote participation of glaucoma patients in glaucoma care using information and communication technology. This system improved the literacy of glaucoma patients as well as glaucoma medical therapy. At the same time, in order to ably provide glaucoma care given the increase in the number of glaucoma patients and the shortage of glaucoma specialists, a tele-medicine system for ophthalmology was developed, in which ophthalmologists

  16. Management of data quality of high level waste characterization

    SciTech Connect

    Winters, W.I., Westinghouse Hanford

    1996-06-12

    Over the past 10 years, the Hanford Site has been transitioning from nuclear materials production to Site cleanup operations. High-level waste characterization at the Hanford Site provides data to support present waste processing operations, tank safety programs, and future waste disposal programs. Quality elements in the high-level waste characterization program will be presented by following a sample through the data quality objective, sampling, laboratory analysis and data review process. Transition from production to cleanup has resulted in changes in quality systems and program; the changes, as well as other issues in these quality programs, will be described. Laboratory assessment through quality control and performance evaluation programs will be described, and data assessments in the laboratory and final reporting in the tank characterization reports will be discussed.

  17. Delivering High-Quality Cancer Care: The Critical Role of Quality Measurement

    PubMed Central

    Spinks, Tracy; Ganz, Patricia A.; Sledge, George W.; Levit, Laura; Hayman, James A.; Eberlein, Timothy J.; Feeley, Thomas W.

    2014-01-01

    In 1999, the Institute of Medicine (IOM) published Ensuring Quality Cancer Care, an influential report that described an ideal cancer care system and issued ten recommendations to address pervasive gaps in the understanding and delivery of quality cancer care. Despite generating much fervor, the report’s recommendations—including two recommendations related to quality measurement—remain largely unfulfilled. Amidst continuing concerns regarding increasing costs and questionable quality of care, the IOM charged a new committee with revisiting the 1999 report and with reassessing national cancer care, with a focus on the aging US population. The committee identified high-quality patient-clinician relationships and interactions as central drivers of quality and attributed existing quality gaps, in part, to the nation’s inability to measure and improve cancer care delivery in a systematic way. In 2013, the committee published its findings in Delivering High-Quality Cancer Care: Charting a New Course for a System in Crisis, which included two recommendations that emphasize coordinated, patient-centered quality measurement and information technology enhancements: Develop a national quality reporting program for cancer care as part of a learning health care system; and,Develop an ethically sound learning health care information technology system for cancer that enables real-time analysis of data from cancer patients in a variety of care settings. These recommendations underscore the need for independent national oversight, public-private collaboration, and substantial funding to create robust, patient-centered quality measurement and learning enterprises to improve the quality, accessibility, and affordability of cancer care in America. PMID:24839592

  18. Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes

    SciTech Connect

    Chung, Kunook; Beak, Hyeonjun; Tchoe, Youngbin; Oh, Hongseok; Yi, Gyu-Chul; Yoo, Hyobin; Kim, Miyoung

    2014-09-01

    We report the growth of GaN micro-rods and coaxial quantum-well heterostructures on graphene films, together with structural and optical characterization, for applications in flexible optical devices. Graphene films were grown on Cu foil by means of chemical vapor deposition, and used as the substrates for the growth of the GaN micro-rods, which were subsequently transferred onto SiO{sub 2}/Si substrates. Highly Si-doped, n-type GaN micro-rods were grown on the graphene films using metal–organic chemical vapor deposition. The growth and vertical alignment of the GaN micro-rods, which is a critical factor for the fabrication of high-performance light-emitting diodes (LEDs), were characterized using electron microscopy and X-ray diffraction. The GaN micro-rods exhibited promising photoluminescence characteristics for optoelectronic device applications, including room-temperature stimulated emission. To fabricate flexible LEDs, In{sub x}Ga{sub 1–x}N/GaN multiple quantum wells and a p-type GaN layer were deposited coaxially on the GaN micro-rods, and transferred onto Ag-coated polymer substrates using lift-off. Ti/Au and Ni/Au metal layers were formed to provide electrical contacts to the n-type and p-type GaN regions, respectively. The micro-rod LEDs exhibited intense emission of visible light, even after transfer onto the flexible polymer substrate, and reliable operation was achieved following numerous cycles of mechanical deformation.

  19. Physical Properties of GaN Nanotubes as Revealed by Computer Simulation

    SciTech Connect

    Wang, Zhiguo; Gao, Fei; Zu, Xiaotao; Weber, William J.

    2008-07-25

    Single-crystalline wurtzite GaN nanotubes have been synthesized recently with proposed applications in nanoscale electronics, optoelectronics and the biochemical-sensing field. Molecular dynamics methods with a Stillinger-Weber potential are used to investigate the melting behavior, thermal conductivity and mechanical properties of these wurtzite-type single crystalline GaN nanotubes. Four major topical areas are summarized in this chapter. (1) The melting temperature of the GaN nanotubes increases with the thickness of the nanotubes to a saturation value, which is close to the melting temperature of bulk GaN. The simulations result reveal that the nanotubes begin to melt at the surface, and then the melting rapidly extends to the interior of the nanotubes as the temperature increases. (2) The thermal conductivity of nanotubes is smaller than that of the bulk GaN single crystal. The thermal conductivity is also found to decrease with temperature and increase with increasing wall thickness of the nanotubes. The change of phonon spectrum and surface inelastic scattering may account for the reduction of thermal conductivity in the nanotubes, while thermal softening and high frequency phonon interactions at high temperatures may provide an explanation for its decrease with increasing temperature. (3) At low temperatures, the simulation results show that the nanotubes exhibit brittle properties; whereas at high temperatures, they behave as ductile materials. The brittle to ductile transition temperature generally increases with increasing wall thickness of the nanotubes and increasing strain rate. (4) The simulation temperature, tube length and strain rate affect the buckling behavior of GaN nanotubes. The critical stress decreases with the increase of simulation temperature and tube length. The dependence of buckling on tube length is consistent with the analysis of equivalent continuum structures using Euler buckling theory.

  20. Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

    NASA Astrophysics Data System (ADS)

    Sundaram, S.; Li, X.; El Gmili, Y.; Bonanno, P. L.; Puybaret, R.; Pradalier, C.; Pantzas, K.; Patriarche, G.; Voss, P. L.; Salvestrini, J. P.; Ougazzaden, A.

    2016-03-01

    We report nano-selective area growth (NSAG) of BGaN by MOCVD on AlN/Si(111) and GaN templates resulting in 150 nm single crystalline nanopyramids. This is in contrast to unmasked or micro-selective area growth, which results in a multi-crystalline structure on both substrates. Various characterization techniques were used to evaluate NSAG as a viable technique to improve BGaN material quality on AlN/Si(111) using results of GaN NSAG and unmasked BGaN growth for comparison. Evaluation of BGaN nanopyramid quality, shape and size uniformity revealed that the growth mechanism is the same on both the templates. Further STEM analysis of BGaN nanopyramids on AlN/Si (111) templates confirmed that these are single-crystalline structures without any dislocations, likely due to single nucleation occurring in the 80 nm mask opening. CL results correspond to boron content between 1.7% and 2.0% in the nanopyramids. We conclude that NSAG is promising for growth of high-quality BGaN nanostructures and complex nano-heterostructures, especially for low-cost silicon substrates.

  1. Structural and magnetic impact of Cr+-implantation into GaN thin film

    NASA Astrophysics Data System (ADS)

    Husnain, G.; Shu-De, Yao; Ahmad, Ishaq; Rafique, H. M.

    2012-06-01

    Thin films of GaN with thickness of 2 μm were synthesized on sapphire. Cr+ ions were implanted into GaN with150 keV energy at a fluence of 3 × 1015 cm-2. The annealing of the samples was carried out for a short time using rapid thermal annealing (RTA). Structural properties of the implanted samples were undertaken by XRD and Rutherford backscattering. The annealed samples demonstrated lattice recovery and damages caused by implantation. The structural properties were also studied by High-resolution X-ray Diffraction (HRXRD). Magnetic measurements of the samples were performed by Alternating Gradient Magnetometer (AGM) at room temperature and by SQUID in the range of 5-380 K. The SQUID results showed ferromagnetic behavior at T = 5 K and above 380 K for Cr+-implanted GaN.

  2. Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge

    NASA Astrophysics Data System (ADS)

    Sato, Taketomo; Kumazaki, Yusuke; Kida, Hirofumi; Watanabe, Akio; Yatabe, Zenji; Matsuda, Soichiro

    2016-01-01

    Photoresponse and photoabsorption properties of GaN porous structures were investigated by measuring photocurrent and spectroscopic photoabsorption under monochromatic light with various wavelengths. The measured photocurrents on the porous GaN electrodes were larger than those on the planar electrodes due to the unique features of the former electrode, such as large surface area and low photoreflectance properties. Moreover, the photocurrents were observed even under illumination with wavelength of 380 nm, corresponding to photon energy of 3.26 eV, which is 130 meV lower than the bandgap energy of bulk GaN. A potential simulation revealed that a high-electric field was induced at the pore tips due to modification of the potential in the porous structures. The observed redshift of the photoabsorption edge can be qualitatively explained by the Franz-Keldysh effect.

  3. Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching

    NASA Astrophysics Data System (ADS)

    Kumazaki, Yusuke; Yatabe, Zenji; Sato, Taketomo

    2016-04-01

    We aimed to develop a photoassisted electrochemical etching process for the formation of GaN porous structures. Pore linearity and depth controllability were strongly affected by the anode voltage. In addition, the use of light with an energy below the band gap played an important role in controlling the pore diameter. Spectro-electrochemical measurements revealed that the high electric field induced at the GaN/electrolyte interface caused a redshift of the photoabsorption edge. This specific phenomenon can be explained by a theoretical calculation based on the Franz-Keldysh effect. On the basis of the results of our experimental and theoretical analyze, we propose a formation model for GaN porous structures. We also note that the application of the Franz-Keldysh effect is useful in controlling the structural properties of GaN porous structures.

  4. Selective-area growth of GaN on non- and semi-polar bulk GaN substrates

    NASA Astrophysics Data System (ADS)

    Okada, Shunsuke; Miyake, Hideto; Hiramatsu, Kazumasa; Enatsu, Yuuki; Nagao, Satoru

    2014-01-01

    We carried out the selective-area growth of GaN and fabricated InGaN/GaN MQWs on non- and semi-polar bulk GaN substrates by MOVPE. The differences in the GaN structures and the In incorporation of InGaN/GaN MQWs grown on non- and semi-polar GaN substrates were investigated. In the case of selective-area growth, different GaN structures were obtained on (20\\bar{2}1) GaN, (20\\bar{2}\\bar{1}) GaN, and (10\\bar{1}0) GaN substrates. A repeating pattern of \\{ 1\\bar{1}01\\} and \\{ 1\\bar{1}0\\bar{1}\\} facets appeared on (20\\bar{2}1) GaN. Then, we fabricated InGaN/GaN MQWs on the facet structures on (20\\bar{2}1) GaN. The emission properties characterized by cathodoluminescence were different for \\{ 1\\bar{1}01\\} and \\{ 1\\bar{1}0\\bar{1}\\} facets. On the other hand, for InGaN/GaN MQWs on non- and semi-polar GaN substrates, steps along the a-axis were observed by AFM. In particular on (20\\bar{2}1) GaN, undulations and undulation bunching appeared. Photoluminescence characterization indicated that In incorporation increased with the off-angle from the m-plane and also depended on the polarity.

  5. Microstructural evolution in H ion induced splitting of freestanding GaN

    SciTech Connect

    Moutanabbir, O.; Scholz, R.; Senz, S.; Goesele, U.; Chicoine, M.; Schiettekatte, F.; Suesskraut, F.; Krause-Rehberg, R.

    2008-07-21

    We investigated the microstructural transformations during hydrogen ion-induced splitting of GaN thin layers. Cross-sectional transmission electron microscopy and positron annihilation spectroscopy data show that the implanted region is decorated with a high density of 1-2 nm bubbles resulting from vacancy clustering during implantation. These nanobubbles persist up to 450 deg. C. Ion channeling data show a strong dechanneling enhancement in this temperature range tentatively attributed to strain-induced lattice distortion. The dechanneling level decreases following the formation of plateletlike structures at 475 deg. C. Extended internal surfaces develop around 550 deg. C leading to the exfoliation of GaN thin layer.

  6. Germanium-catalyzed growth of single-crystal GaN nanowires

    NASA Astrophysics Data System (ADS)

    Saleem, Umar; Wang, Hong; Peyrot, David; Olivier, Aurélien; Zhang, Jun; Coquet, Philippe; Ng, Serene Lay Geok

    2016-04-01

    We report the use of Germanium (Ge) as catalyst for Gallium Nitride (GaN) nanowires growth. High-yield growth has been achieved with Ge nanoparticles obtained by dewetting a thin layer of Ge on a Si (100) substrate. The nanowires are long and grow straight with very little curvature. The GaN nanowires are single-crystalline and show a Wurtzite structure growing along the [0001] axis. The growth follows a metal-free Vapor-Liquid-Solid (VLS) mechanism, further allowing a CMOS technology compatibility. The synthesis of nanowires has been done using an industrial Low Pressure Chemical Vapor Deposition (LPCVD) system.

  7. First-principles Study of Hydrogen depassivation of Mg acceptor by Be in GaN

    NASA Astrophysics Data System (ADS)

    Zhang, Qiming; Wang, Xiao; Wang, Chihsiang

    2010-03-01

    The process of hydrogen depassivation of the acceptor by can convert the as-grown high-resistivity -doped into a - conducting material. A first-principles study on the process will be presented. The formation energies of various complex of impurities and point defects have been calculated and compared. The diffusion barriers of the hydrogen atom in the doped GaN have been obtained by the Nudge-Elastic-Band method. The results explain successfully the experimental observation that the hole concentration has been significantly enhanced in a Be-implanted Mg-doped GaN.

  8. High quality factor, fully switchable terahertz superconducting metasurface

    SciTech Connect

    Scalari, G. Maissen, C.; Faist, J.; Cibella, S.; Leoni, R.

    2014-12-29

    We present a complementary THz metasurface realised with Niobium thin film which displays a quality factor Q = 54 and a fully switchable behaviour as a function of the temperature. The switching behaviour and the high quality factor are due to a careful design of the metasurface aimed at maximising the ohmic losses when the Nb is above the critical temperature and minimising the radiative coupling. The superconductor allows the operation of the cavity with high Q and the use of inductive elements with a high aspect ratio. Comparison with three dimensional finite element simulations highlights the crucial role of the inductive elements and of the kinetic inductance of the Cooper pairs in achieving the high quality factor and the high field enhancement.

  9. Doping of GaN by ion implantation: Does It Work?

    SciTech Connect

    Suvkhanov, A.; Wu, W.; Price, K.; Parikh, N.; Irene, E.; Hunn, J.; Thomson, D.; Davis, R.F.; Krasnobaev, L.

    1998-04-01

    Epitaxially grown GaN by metal organic chemical vapor deposition (MOCVD) on SiC were implanted with 100 keV Si{sup +} (for n-type) and 80 keV Mg{sup +} (for p-type) with various fluences from 1 {times} 10{sup 12} to 7 {times} 10 {sup 15} ions/cm{sup 2} at liquid nitrogen temperature (LT), room temperature (RT), and 700 C (HT). High temperature (1,200 C and 1,500 C) annealing was carried out after capping the GaN with epitaxial AlN by MOCVD to study damage recovery. Samples were capped by a layer of AlN in order to protect the GaN surface during annealing. Effects of implant temperature, damage and dopant activation are critically studied to evaluate a role of ion implantation in doping of GaN. The damage was studied by Rutherford Backscattering/Channeling, spectroscopic ellipsometry and photoluminescence. Results show dependence of radiation damage level on temperature of the substrate during implantation: implantations at elevated temperatures up to 550 C decrease the lattice disorder; hot implants above 550 C can not be useful in doping of GaN due to nitrogen loss from the surface. SE measurements have indicated very high sensitivity to the implantation damage. PL measurements at LT of 80 keV Mg{sup +} (5 {times} 10{sup 14} cm{sup 2}) implanted and annealed GaN showed two peaks: one {approximately} 100 meV and another {approximately} 140 meV away from the band edge.

  10. Optical activation behavior of ion implanted acceptor species in GaN

    SciTech Connect

    Skromme, B.J.; Martinez, G.L.

    2000-07-01

    Ion implantation is used to investigate the spectroscopic properties of Mg, Be, and C acceptors in GaN. Activation of these species is studied using low temperature photoluminescence (PL). Low dose implants into high quality undoped hydride vapor phase epitaxial (HVPE) material are used in conjunction with high temperature (1300 C) rapid thermal anneals to obtain high quality spectra. Dramatic, dose-dependent evidence of Mg acceptor activation is observed without any co-implants, including a strong, sharp neutral Mg acceptor-bound exciton and strong donor-acceptor pair peaks. Variable temperature measurements reveal a band-to-acceptor transition, whose energy yields an optical binding energy of 224 meV. Be and C implants yield only slight evidence of shallow acceptor-related features and produce dose-correlated 2.2 eV PL, attributed to residual implantation damage. Their poor optical activation is tentatively attributed to insufficient vacancy production by these lighter ions. Clear evidence is obtained for donor-Zn acceptor pair and acceptor-bound exciton peaks in Zn-doped HVPE material.

  11. Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

    SciTech Connect

    Takeuchi, S. Asazu, H.; Nakamura, Y.; Sakai, A.; Imanishi, M.; Imade, M.; Mori, Y.

    2015-12-28

    We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration of the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results.

  12. Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

    NASA Astrophysics Data System (ADS)

    Takeuchi, S.; Asazu, H.; Imanishi, M.; Nakamura, Y.; Imade, M.; Mori, Y.; Sakai, A.

    2015-12-01

    We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration of the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results.

  13. XPS investigation of ion beam induced conversion of GaAs(0 0 1) surface into GaN overlayer

    NASA Astrophysics Data System (ADS)

    Kumar, Praveen; Kumar, Mahesh; Govind; Mehta, B. R.; Shivaprasad, S. M.

    2009-10-01

    For the advance of GaN based optoelectronic devices, one of the major barriers has been the high defect density in GaN thin films, due to lattice parameter and thermal expansion incompatibility with conventional substrates. Of late, efforts are focused in fine tuning epitaxial growth and in search for a low temperature method of forming low defect GaN with zincblende structure, by a method compatible to the molecular beam epitaxy process. In principle, to grow zincblende GaN the substrate should have four-fold symmetry and thus zincblende GaN has been prepared on several substrates including Si, 3C-SiC, GaP, MgO, and on GaAs(0 0 1). The iso-structure and a common shared element make the epitaxial growth of GaN on GaAs(0 0 1) feasible and useful. In this study ion-induced conversion of GaAs(0 0 1) surface into GaN at room temperature is optimized. At the outset a Ga-rich surface is formed by Ar + ion bombardment. Nitrogen ion bombardment of the Ga-rich GaAs surface is performed by using 2-4 keV energy and fluence ranging from 3 × 10 13 ions/cm 2 to 1 × 10 18 ions/cm 2. Formation of surface GaN is manifested as chemical shift. In situ core level and true secondary electron emission spectra by X-ray photoelectron spectroscopy are monitored to observe the chemical and electronic property changes. Using XPS line shape analysis by deconvolution into chemical state, we report that 3 keV N 2+ ions and 7.2 × 10 17 ions/cm 2 are the optimal energy and fluence, respectively, for the nitridation of GaAs(0 0 1) surface at room temperature. The measurement of electron emission of the interface shows the dependence of work function to the chemical composition of the interface. Depth profile study by using Ar + ion sputtering, shows that a stoichiometric GaN of 1 nm thickness forms on the surface. This, room temperature and molecular beam epitaxy compatible, method of forming GaN temperature can serve as an excellent template for growing low defect GaN epitaxial overlayers.

  14. Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

    NASA Astrophysics Data System (ADS)

    Conroy, M.; Li, H.; Kusch, G.; Zhao, C.; Ooi, B.; Edwards, P. R.; Martin, R. W.; Holmes, J. D.; Parbrook, P. J.

    2016-05-01

    We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD

  15. Concrete Waste Recycling Process for High Quality Aggregate

    SciTech Connect

    Ishikura, Takeshi; Fujii, Shin-ichi

    2008-01-15

    Large amount of concrete waste generates during nuclear power plant (NPP) dismantling. Non-contaminated concrete waste is assumed to be disposed in a landfill site, but that will not be the solution especially in the future, because of decreasing tendency of the site availability and natural resources. Concerning concrete recycling, demand for roadbeds and backfill tends to be less than the amount of dismantled concrete generated in a single rural site, and conventional recycled aggregate is limited of its use to non-structural concrete, because of its inferior quality to ordinary natural aggregate. Therefore, it is vital to develop high quality recycled aggregate for general uses of dismantled concrete. If recycled aggregate is available for high structural concrete, the dismantling concrete is recyclable as aggregate for industry including nuclear field. Authors developed techniques on high quality aggregate reclamation for large amount of concrete generated during NPP decommissioning. Concrete of NPP buildings has good features for recycling aggregate; large quantity of high quality aggregate from same origin, record keeping of the aggregate origin, and little impurities in dismantled concrete such as wood and plastics. The target of recycled aggregate in this development is to meet the quality criteria for NPP concrete as prescribed in JASS 5N 'Specification for Nuclear Power Facility Reinforced Concrete' and JASS 5 'Specification for Reinforced Concrete Work'. The target of recycled aggregate concrete is to be comparable performance with ordinary aggregate concrete. The high quality recycled aggregate production techniques are assumed to apply for recycling for large amount of non-contaminated concrete. These techniques can also be applied for slightly contaminated concrete dismantled from radiological control area (RCA), together with free release survey. In conclusion: a technology on dismantled concrete recycling for high quality aggregate was developed

  16. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    SciTech Connect

    Kushvaha, S. S. Pal, P.; Shukla, A. K.; Joshi, Amish G.; Gupta, Govind; Kumar, M.; Singh, S.; Gupta, Bipin K.; Haranath, D.

    2014-02-15

    We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 10{sup 8} cm{sup −2} at 750 °C) than that of the low temperature grown sample (1.1 × 10{sup 9} cm{sup −2} at 730 °C). A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  17. Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Laifi, J.; Chaaben, N.; Bouazizi, H.; Fourati, N.; Zerrouki, C.; El Gmili, Y.; Bchetnia, A.; Salvestrini, J. P.; El Jani, B.

    2016-06-01

    We have investigated the kinetic growth of low temperature GaN nucleation layers (LT-GaN) grown on GaAs substrates with different crystalline orientations. GaN nucleation layers were grown by metal organic vapor phase epitaxy (MOVPE) in a temperature range of 500-600 °C on oriented (001), (113), (112) and (111) GaAs substrates. The growth was in-situ monitored by laser reflectometry (LR). Using an optical model, including time-dependent surface roughness and growth rate profiles, simulations were performed to best approach the experimental reflectivity curves. Results are discussed and correlated with ex-situ analyses, such as atomic force microscopy (AFM) and UV-visible reflectance (SR). We show that the GaN nucleation layers growth results the formation of GaN islands whose density and size vary greatly with both growth temperature and substrate orientation. Arrhenius plots of the growth rate for each substrate give values of activation energy varying from 0.20 eV for the (001) orientation to 0.35 eV for the (113) orientation. Using cathodoluminescence (CL), we also show that high temperature (800-900 °C) GaN layers grown on top of the low temperature (550 °C) GaN nucleation layers, grown themselves on the GaAs substrates with different orientations, exhibit cubic or hexagonal phase depending on both growth temperature and substrate orientation.

  18. Realization of high quality production schedules: Structuring quality factors via iteration of user specification processes

    NASA Technical Reports Server (NTRS)

    Hamazaki, Takashi

    1992-01-01

    This paper describes an architecture for realizing high quality production schedules. Although quality is one of the most important aspects of production scheduling, it is difficult, even for a user, to specify precisely. However, it is also true that the decision as to whether a scheduler is good or bad can only be made by the user. This paper proposes the following: (1) the quality of a schedule can be represented in the form of quality factors, i.e. constraints and objectives of the domain, and their structure; (2) quality factors and their structure can be used for decision making at local decision points during the scheduling process; and (3) that they can be defined via iteration of user specification processes.

  19. Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition.

    PubMed

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Zhang, Jie; Wang, Jiaming; He, Chenguang; Zhang, Lisheng; Wang, Maojun; Xu, Fujun; Tang, Ning; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

    2016-01-01

    By employing a single AlGaN layer with low Al composition, high quality and uniformity AlGaN/GaN heterostructures have been successfully grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). The heterostructures exhibit a high electron mobility of 2150 cm(2)/Vs with an electron density of 9.3 × 10(12) cm(-2). The sheet resistance is 313 ± 4 Ω/◻ with ±1.3% variation. The high uniformity is attributed to the reduced wafer bow resulting from the balance of the compressive stress induced and consumed during the growth, and the thermal tensile stress induced during the cooling down process. By a combination of theoretical calculations and in situ wafer curvature measurements, we find that the compressive stress consumed by the dislocation relaxation (~1.2 GPa) is comparable to the value of the thermal tensile stress (~1.4 GPa) and we should pay more attention to it during growth of GaN on Si substrates. Our results demonstrate a promising approach to simplifying the growth processes of GaN-on-Si to reduce the wafer bow and lower the cost while maintaining high material quality. PMID:26960730

  20. Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

    NASA Astrophysics Data System (ADS)

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Zhang, Jie; Wang, Jiaming; He, Chenguang; Zhang, Lisheng; Wang, Maojun; Xu, Fujun; Tang, Ning; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

    2016-03-01

    By employing a single AlGaN layer with low Al composition, high quality and uniformity AlGaN/GaN heterostructures have been successfully grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). The heterostructures exhibit a high electron mobility of 2150 cm2/Vs with an electron density of 9.3 × 1012 cm‑2. The sheet resistance is 313 ± 4 Ω/◻ with ±1.3% variation. The high uniformity is attributed to the reduced wafer bow resulting from the balance of the compressive stress induced and consumed during the growth, and the thermal tensile stress induced during the cooling down process. By a combination of theoretical calculations and in situ wafer curvature measurements, we find that the compressive stress consumed by the dislocation relaxation (~1.2 GPa) is comparable to the value of the thermal tensile stress (~1.4 GPa) and we should pay more attention to it during growth of GaN on Si substrates. Our results demonstrate a promising approach to simplifying the growth processes of GaN-on-Si to reduce the wafer bow and lower the cost while maintaining high material quality.

  1. Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

    PubMed Central

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Zhang, Jie; Wang, Jiaming; He, Chenguang; Zhang, Lisheng; Wang, Maojun; Xu, Fujun; Tang, Ning; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

    2016-01-01

    By employing a single AlGaN layer with low Al composition, high quality and uniformity AlGaN/GaN heterostructures have been successfully grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). The heterostructures exhibit a high electron mobility of 2150 cm2/Vs with an electron density of 9.3 × 1012 cm−2. The sheet resistance is 313 ± 4 Ω/◻ with ±1.3% variation. The high uniformity is attributed to the reduced wafer bow resulting from the balance of the compressive stress induced and consumed during the growth, and the thermal tensile stress induced during the cooling down process. By a combination of theoretical calculations and in situ wafer curvature measurements, we find that the compressive stress consumed by the dislocation relaxation (~1.2 GPa) is comparable to the value of the thermal tensile stress (~1.4 GPa) and we should pay more attention to it during growth of GaN on Si substrates. Our results demonstrate a promising approach to simplifying the growth processes of GaN-on-Si to reduce the wafer bow and lower the cost while maintaining high material quality. PMID:26960730

  2. Ion implantation processing of GaN epitaxial layers

    SciTech Connect

    Tan, H.H.; Williams, J.S.; Zou, J.; Cockayne, D.J.H.; Pearton, S.J.; Yuan, C.

    1996-12-31

    Ion implantation induced-damage build up in epitaxial GaN layers grown on sapphire has been analyzed by ion channeling and electron microscopy techniques. The epitaxial layers are extremely resistant to ion beam damage in that substantial dynamic annealing of implantation disorder occurs even at liquid nitrogen temperatures. Amorphous layers can be formed in some cases if the implantation dose is high enough. However, the damage (amorphous or complex extended defects) that is formed is also extremely difficult to remove during annealing and required temperatures in excess of 1,100 C.

  3. Quality of life and the high-dependency unit.

    PubMed

    Brooks, N

    2000-02-01

    This study was designed to identify and measure the patients' perspective of the concept quality of life within the context of a high-dependency unit (HDU). Data were collected in two phases. In phase one, 55 patients were interviewed, which resulted in the concept clarification of quality of life as: physical, social, psychological and family/friends. In phase two, 51 patients undertook quality-of-life assessment using validated instruments the Quality of Life Index (Ferrans & Powers 1985) and the Global Quality of Life Scale (Hyland & Sodergren 1997). Post-HDU patients demonstrated improvements upon pre-admission scores in both instruments (the social domain in the quality of life index being the exception), although this only reached statistical significance P<0.05 in the overall index score and within the domains of health and family. When exploring variables of age and severity of illness (Apache 2 score, Knaus et al. 1980) it was the people who were older and physiologically compromised to an increased extent (P<0.05) who demonstrated higher levels of satisfaction with their resulting quality of life. This study has been successful in providing patients with an opportunity to participate more actively in service evaluation and has identified the need for future evaluation of HDUs to move beyond physiological measures, to incorporate the impact that illness leading to admission to an HDU has upon the patients' ability to function and their resulting quality of life. PMID:10790712

  4. Developing Visions of High-Quality Mathematics Instruction

    ERIC Educational Resources Information Center

    Munter, Charles

    2014-01-01

    This article introduces an interview-based instrument that was created for the purposes of characterizing the visions of high-quality mathematics instruction of teachers, principals, mathematics coaches, and district leaders and tracking changes in those visions over time. The instrument models trajectories of perceptions of high-quality…

  5. GaN Nanowire Devices: Fabrication and Characterization

    NASA Astrophysics Data System (ADS)

    Scott, Reum

    The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

  6. Comparative Study of Defect Properties in GaN: Ab initio and Empirical Potential Calculations

    SciTech Connect

    Gao, Fei; Bylaska, Eric J.; El-Azab, Anter; Weber, William J.; LM Wang, R Fromknecht, LL Snead, DF Downey and H Takahashi

    2004-04-05

    Density functional theory (DFT) is used to study the formation, properties and atomic configurations of monovacancies, antisite defects and possible interstitials in GaN. The relaxation around a vacancy is generally small, but the relaxation around antisite defects is large, particularly for a Ga antisite defect, which is not stable and converts to an N-N<0001> split interstitial. All N interstitials, starting from any possible sites, eventually transfer into the N-N split interstitials, forming N molecules. In the case of Ga interstitials, the most favorable configuration is the Ga octahedral interstitial. However, it is found that the Ga-Ga<> split interstitial can bridge the gap between non-bonded Ga atoms along the <11-2> direction, which leads to the formation of Ga atomic wires in GaN, with bond distance close to those noted in bulk Ga. In addition, two representative potentials, namely Stillinger-Weber and Tersoff-Brenner potentials, have been employed to deter mine the formation of defects using molecular dynamics (MD) method in GaN. The MD results are discussed and compared to DFT calculations. The present DFT and MD results provide guidelines for evaluating the quality and fit of empirical potentials for large-scale simulations of ion-solid interaction and thermal annealing of defects in GaN.

  7. Deep traps in n-type GaN epilayers grown by plasma assisted molecular beam epitaxy

    SciTech Connect

    Kamyczek, P.; Placzek-Popko, E.; Zielony, E.; Gumienny, Z.; Zytkiewicz, Z. R.

    2014-01-14

    In this study, we present the results of investigations on Schottky Au-GaN diodes by means of conventional DLTS and Laplace DLTS methods within the temperature range of 77 K–350 K. Undoped GaN layers were grown using the plasma-assisted molecular beam epitaxy technique on commercial GaN/sapphire templates. The quality of the epilayers was studied by micro-Raman spectroscopy (μ-RS) which proved the hexagonal phase and good crystallinity of GaN epilayers as well as a slight strain. The photoluminescence spectrum confirmed a high crystal quality by intense excitonic emission but it also exhibited a blue emission band of low intensity. DLTS signal spectra revealed the presence of four majority traps: two high-temperature and two low-temperature peaks. Using the Laplace DLTS method and Arrhenius plots, the apparent activation energy and capture cross sections were obtained. For two high-temperature majority traps, they were equal to E{sub 1} = 0.65 eV, σ{sub 1} = 8.2 × 10{sup −16} cm{sup 2} and E{sub 2} = 0.58 eV, σ{sub 2} = 2.6 × 10{sup −15} cm{sup 2} whereas for the two low-temperature majority traps they were equal to E{sub 3} = 0.18 eV, σ{sub 3} = 9.7 × 10{sup −18} cm{sup 2} and E{sub 4} = 0.13 eV, σ{sub 4} = 9.2 × 10{sup −18} cm{sup 2}. The possible origin of the traps is discussed and the results are compared with data reported elsewhere.

  8. Effective multidisciplinary working: the key to high-quality care.

    PubMed

    Ndoro, Samuel

    This article explores multidisciplinary team working, inter-disciplinary, trans-disciplinary and effective collaborative practice in order to provide high-quality patient care. It discusses different views on collaboration, some of the issues around cross-discipline and multi-agency working and concerns around promoting 'high-quality' care. It also discusses the importance of evidence-based practice in multidisciplinary teams. Issues around good-quality care, clinical governance and the audit cycle in MDTs are addressed. The article highlights the importance of the 6Cs (care, compassion, competence, communication, courage and commitment) in MDTs if quality care is to be achieved. The article also explores advantages and limitations of multidisciplinary team working, trans-disciplinary working and inter-professional working in developing and delivering high-quality patient-centred care. Further research is needed on how clinical audits can help to improve how MDTs function in order improve the quality of service provided to clients. PMID:25072333

  9. Multicolor, High Efficiency, Nanotextured LEDs

    SciTech Connect

    Jung Han; Arto Nurmikko

    2011-09-30

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and green for Solid State Lighting applications. Accomplishments in the duration of the contract period include (i) heteroepitaxy of nitrogen-polar LEDs on sapphire, (ii) heteroepitaxy of semipolar (11{bar 2}2) green LEDs on sapphire, (iii) synthesis of quantum-dot loaded nanoporous GaN that emits white light without phosphor conversion, (iv) demonstration of the highest quality semipolar (11{bar 2}2) GaN on sapphire using orientation-controlled epitaxy, (v) synthesis of nanoscale GaN and InGaN medium, and (vi) development of a novel liftoff process for manufacturing GaN thin-film vertical LEDs. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  10. Stress related aspects of GaN technology physics

    NASA Astrophysics Data System (ADS)

    Suhir, Ephraim

    2015-03-01

    Simple, easy-to-use and physically meaningful analytical models have been developed for the assessment of the combined effect of the lattice and thermal mismatch on the induced stresses in an elongated bi-material assembly, as well as on the thermal mismatch on the thermal stresses in a tri-material assembly, in which the lattice mismatched stresses are eliminated in one way or another. This could be done, e.g., by using a polished or an etched substrate. The analysis is carried out in application to Gallium Nitride (GaN)-Silicon Carbide (SiC) and GaN-diamond (C) filmsubstrate assemblies. The calculated data are obtained, assuming that no annealing or other stress reduction means is applied. The data agree reasonably well with the reported (available) in-situ measurements. The most important conclusion from the computed data is that even if a reasonably good lattice match takes place (as, e.g., in the case of a GaN film fabricated on a SiC substrate, when the mismatch strain is only about 3%) and, in addition, the temperature change (from the fabrication/growth temperature to the operation temperature) is significant (as high as 1000 °C), the thermal stresses are still considerably lower than the lattice-mismatch stresses. Although there are structural and technological means for further reduction of the lattice-mismatch stresses (e.g., by high temperature annealing or by providing one or more buffering layers, or by using patterned or porous substrates), there is still a strong incentive to eliminate completely the lattice mismatch stresses. This seems to be indeed possible, if polished or otherwise flattened (e.g., chemically etched) substrates and sputter deposited GaN film is employed. In such a case only thermal stresses remain, but even these could be reduced, if necessary, by using compliant buffering layers, including layers of variable compliance, or by introducing variable compliance into the properly engineered substrate. In any event, it is expected

  11. Devices for medical diagnosis with GaN lasers

    NASA Astrophysics Data System (ADS)

    Kwasny, Miroslaw; Mierczyk, Zygmunt

    2003-10-01

    This paper presents laser-induced fluroescence method (LIF) employing endogenous ("autofluroescence") and exogenous fluorophores. LIF is applied for clinical diagnosis in dermatology, gynaecology, urology, lung tumors as well as for early dentin caries. We describe the analysers with He-Ne, He-Cd, and SHG Nd:YAG lasers and new generation systems based on blue semiconductor GaN lasers that have been implemented into clinical practice till now. The LIF method, fundamental one for many medical applications, with excitation radiation of wavelength 400 nm could be appl,ied only using tunable dye lasers or titanium lasers adequte for laboratory investigations. Development of GaN laser shows possibility to design portable, compact diagnostic devices as multi-channel analysers of fluorescence spectra and surface imaging devoted to clinical application. The designed systems used for spectra measurement and registration of fluorescence images include lasers of power 5-30 mW and generate wavelengths of 405-407 nm. They are widely used in PDT method for investigation of superficial distribution of accumulation kinetics of all known photosensitizers, their elimination, and degradation as well as for treatment of superficial lesions of mucosa and skin. Excitation of exogenous porphrins in Soret band makes possible to estimate their concentration and a period of healthy skin photosensitivity that occurs after photosensitiser injections. Due to high sensitivity of spectrum analysers, properties of photosensitisers can be investigated in vitro (e.g. their aggregation, purity, chromatographic distributions) when their concentrations are 2-3 times lower in comparison to concentrations investigated with typical spectrofluorescence methods. Dentistry diagnosis is a new field in which GaN laser devices can be applied. After induction with blue light, decreased autofluorescence intensity can be observed when dentin caries occur and strong characteristic bands of endogenous porphyrines

  12. Can patients reliably identify safe, high quality care?

    PubMed Central

    Tevis, Sarah E.; Schmocker, Ryan K.; Kennedy, Gregory D.

    2015-01-01

    The Hospital Consumer Assessment of Healthcare Providers and Systems (HCAHPS) survey is a publicly reported tool that measures patient satisfaction. As both patients and Centers for Medicare & Medicaid Services (CMS) reimbursement rely on survey results as a metric of quality of care, we reviewed the current literature to determine if patient satisfaction correlates with quality, safety, or patient outcomes. We found varying associations between safety culture, process of care measure compliance, and patient outcomes with patient satisfaction on the HCAHPS survey. Some studies found inverse relationships between quality and safety metrics and patient satisfaction. The measure that most reliably correlated with high patient satisfaction was low readmission rate. Future studies using patient specific data are needed to better identify which factors most influence patient satisfaction and to determine if patient satisfaction is a marker of safer and better quality care. Furthermore, the HCAHPS survey should continue to undergo evaluations to assure it generates predictable results. PMID:26413179

  13. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Evans, K. R.; Leach, J.; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  14. Extremely high current density over 1000 A/cm2 operation in M-GaN LEDs on bulk GaN substrates with low-efficiency droop

    NASA Astrophysics Data System (ADS)

    Yokogawa, Toshiya; Inoue, Akira

    2014-02-01

    A high current density over 1000 A/cm2 operation in small chip size m-plane GaN-LED has been successfully demonstrated. The LED with chip size 450 × 450 μm2 has emitted 1353 mW in light output power and 39.2% in external quantum efficiency (EQE) at 1000 A/cm2 (1134 mA). The m-plane GaN-LED has showed asymmetric radiation characteristics. The radiation patterns are controlled by the surface of LED package, the height of LED chip, and striped texture on top m-plane surface.

  15. Providing high-quality care in primary care settings

    PubMed Central

    Beaulieu, Marie-Dominique; Geneau, Robert; Grande, Claudio Del; Denis, Jean-Louis; Hudon, Éveline; Haggerty, Jeannie L.; Bonin, Lucie; Duplain, Réjean; Goudreau, Johanne; Hogg, William

    2014-01-01

    Abstract Objective To gain a deeper understanding of how primary care (PC) practices belonging to different models manage resources to provide high-quality care. Design Multiple-case study embedded in a cross-sectional study of a random sample of 37 practices. Setting Three regions of Quebec. Participants Health care professionals and staff of 5 PC practices. Methods Five cases showing above-average results on quality-of-care indicators were purposefully selected to contrast on region, practice size, and PC model. Data were collected using an organizational questionnaire; the Team Climate Inventory, which was completed by health care professionals and staff; and 33 individual interviews. Detailed case histories were written and thematic analysis was performed. Main findings The core common feature of these practices was their ongoing effort to make trade-offs to deliver services that met their vision of high-quality care. These compromises involved the same 3 areas, but to varying degrees depending on clinic characteristics: developing a shared vision of high-quality care; aligning resource use with that vision; and balancing professional aspirations and population needs. The leadership of the physician lead was crucial. The external environment was perceived as a source of pressure and dilemmas rather than as a source of support in these matters. Conclusion Irrespective of their models, PC practices’ pursuit of high-quality care is based on a vision in which accessibility is a key component, balanced by appropriate management of available resources and of external environment expectations. Current PC reforms often create tensions rather than support PC practices in their pursuit of high-quality care. PMID:24829023

  16. Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications

    DOE PAGESBeta

    Mitchell, Brandon; Timmerman, D.; Poplawsky, Jonathan D.; Zhu, W.; Lee, D.; Wakamatsu, R.; Takatsu, J.; Matsuda, M.; Guo, Wei; Lorenz, K.; et al

    2016-01-04

    The detrimental influence of oxygen on the performance and reliability of V/III nitride based devices is well known. However, the influence of oxygen on the nature of the incorporation of other co-dopants, such as rare earth ions, has been largely overlooked in GaN. Here, we report the first comprehensive study of the critical role that oxygen has on Eu in GaN, as well as atomic scale observation of diffusion and local concentration of both atoms in the crystal lattice. We find that oxygen plays an integral role in the location, stability, and local defect structure around the Eu ions thatmore » were doped into the GaN host. Although the availability of oxygen is essential for these properties, it renders the material incompatible with GaN-based devices. However, the utilization of the normally occurring oxygen in GaN is promoted through structural manipulation, reducing its concentration by 2 orders of magnitude, while maintaining both the material quality and the favorable optical properties of the Eu ions. Furthermore, these findings open the way for full integration of RE dopants for optoelectronic functionalities in the existing GaN platform.« less

  17. Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lekhal, Kaddour; Bae, Si-Young; Lee, Ho-Jun; Mitsunari, Tadashi; Tamura, Akira; Deki, Manato; Honda, Yoshio; Amano, Hiroshi

    2016-05-01

    In this paper, we discuss the influence of parameters such as type of carrier gas and NH3/HCl flow ratio on the growth of vertical GaN microstructures by selective-area growth (SAG) hydride vapor phase epitaxy (HVPE). On various strain-induced templates such as GaN/sapphire, GaN/Si, and AlN/Si, regular arrays of Ga-polar GaN microrods were properly achieved by adjusting the growth parameters. The photoluminescence and micro-Raman measurements reveal not only the crystal quality of the GaN microrods but also strain distribution. These results will give insight into the control of the morphology of GaN microrods in terms of the strain induced from templates in SAG-HVPE. The precisely controlled arrays of GaN microrods can be used for next-generation light-emitting diodes (LEDs) by realizing InGaN/GaN multi-quantum wells (MQWs) with a radial structure.

  18. Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Mitchell, B.; Timmerman, D.; Poplawsky, J.; Zhu, W.; Lee, D.; Wakamatsu, R.; Takatsu, J.; Matsuda, M.; Guo, W.; Lorenz, K.; Alves, E.; Koizumi, A.; Dierolf, V.; Fujiwara, Y.

    2016-01-01

    The detrimental influence of oxygen on the performance and reliability of V/III nitride based devices is well known. However, the influence of oxygen on the nature of the incorporation of other co-dopants, such as rare earth ions, has been largely overlooked in GaN. Here, we report the first comprehensive study of the critical role that oxygen has on Eu in GaN, as well as atomic scale observation of diffusion and local concentration of both atoms in the crystal lattice. We find that oxygen plays an integral role in the location, stability, and local defect structure around the Eu ions that were doped into the GaN host. Although the availability of oxygen is essential for these properties, it renders the material incompatible with GaN-based devices. However, the utilization of the normally occurring oxygen in GaN is promoted through structural manipulation, reducing its concentration by 2 orders of magnitude, while maintaining both the material quality and the favorable optical properties of the Eu ions. These findings open the way for full integration of RE dopants for optoelectronic functionalities in the existing GaN platform.

  19. Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications

    PubMed Central

    Mitchell, B.; Timmerman, D.; Poplawsky, J.; Zhu, W.; Lee, D.; Wakamatsu, R.; Takatsu, J.; Matsuda, M.; Guo, W.; Lorenz, K.; Alves, E.; Koizumi, A.; Dierolf, V.; Fujiwara, Y.

    2016-01-01

    The detrimental influence of oxygen on the performance and reliability of V/III nitride based devices is well known. However, the influence of oxygen on the nature of the incorporation of other co-dopants, such as rare earth ions, has been largely overlooked in GaN. Here, we report the first comprehensive study of the critical role that oxygen has on Eu in GaN, as well as atomic scale observation of diffusion and local concentration of both atoms in the crystal lattice. We find that oxygen plays an integral role in the location, stability, and local defect structure around the Eu ions that were doped into the GaN host. Although the availability of oxygen is essential for these properties, it renders the material incompatible with GaN-based devices. However, the utilization of the normally occurring oxygen in GaN is promoted through structural manipulation, reducing its concentration by 2 orders of magnitude, while maintaining both the material quality and the favorable optical properties of the Eu ions. These findings open the way for full integration of RE dopants for optoelectronic functionalities in the existing GaN platform. PMID:26725651

  20. Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications.

    PubMed

    Mitchell, B; Timmerman, D; Poplawsky, J; Zhu, W; Lee, D; Wakamatsu, R; Takatsu, J; Matsuda, M; Guo, W; Lorenz, K; Alves, E; Koizumi, A; Dierolf, V; Fujiwara, Y

    2016-01-01

    The detrimental influence of oxygen on the performance and reliability of V/III nitride based devices is well known. However, the influence of oxygen on the nature of the incorporation of other co-dopants, such as rare earth ions, has been largely overlooked in GaN. Here, we report the first comprehensive study of the critical role that oxygen has on Eu in GaN, as well as atomic scale observation of diffusion and local concentration of both atoms in the crystal lattice. We find that oxygen plays an integral role in the location, stability, and local defect structure around the Eu ions that were doped into the GaN host. Although the availability of oxygen is essential for these properties, it renders the material incompatible with GaN-based devices. However, the utilization of the normally occurring oxygen in GaN is promoted through structural manipulation, reducing its concentration by 2 orders of magnitude, while maintaining both the material quality and the favorable optical properties of the Eu ions. These findings open the way for full integration of RE dopants for optoelectronic functionalities in the existing GaN platform. PMID:26725651

  1. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

    PubMed Central

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-01-01

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices. PMID:26563573

  2. Surface oxidation of GaN(0001): Nitrogen plasma-assisted cleaning for ultrahigh vacuum applications

    SciTech Connect

    Gangopadhyay, Subhashis; Schmidt, Thomas Kruse, Carsten; Figge, Stephan; Hommel, Detlef; Falta, Jens

    2014-09-01

    The cleaning of metal-organic vapor-phase epitaxial GaN(0001) template layers grown on sapphire has been investigated. Different procedures, performed under ultrahigh vacuum conditions, including degassing and exposure to active nitrogen from a radio frequency nitrogen plasma source have been compared. For this purpose, x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and scanning tunneling microscopy have been employed in order to assess chemical as well as structural and morphological surface properties. Initial degassing at 600 °C under ultrahigh vacuum conditions only partially eliminates the surface contaminants. In contrast to plasma assisted nitrogen cleaning at temperatures as low as 300 °C, active-nitrogen exposure at temperatures as high as 700 °C removes the majority of oxide species from the surface. However, extended high-temperature active-nitrogen cleaning leads to severe surface roughening. Optimum results regarding both the removal of surface oxides as well as the surface structural and morphological quality have been achieved for a combination of initial low-temperature plasma-assisted cleaning, followed by a rapid nitrogen plasma-assisted cleaning at high temperature.

  3. Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition

    PubMed Central

    Min, Daehong; Park, Donghwy; Jang, Jongjin; Lee, Kyuseung; Nam, Okhyun

    2015-01-01

    Realization of phosphor-free white-light emitters is becoming an important milestone on the road to achieve high quality and reliability in high-power white-light-emitting diodes (LEDs). However, most of reported methods have not been applied to practical use because of their difficulties and complexity. In this study we demonstrated a novel and practical growth method for phosphor-free white-light emitters without any external processing, using only in-situ high-density GaN nanostructures that were formed by overgrowth on a silicon nitride (SiNx) interlayer deposited by metal organic chemical vapor deposition. The nano-sized facets produced variations in the InGaN thickness and the indium concentration when an InGaN/GaN double heterostructure was monolithically grown on them, leading to white-color light emission. It is important to note that the in-situ SiNx interlayer not only facilitated the GaN nano-facet structure, but also blocked the propagation of dislocations. PMID:26626890

  4. Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Min, Daehong; Park, Donghwy; Jang, Jongjin; Lee, Kyuseung; Nam, Okhyun

    2015-12-01

    Realization of phosphor-free white-light emitters is becoming an important milestone on the road to achieve high quality and reliability in high-power white-light-emitting diodes (LEDs). However, most of reported methods have not been applied to practical use because of their difficulties and complexity. In this study we demonstrated a novel and practical growth method for phosphor-free white-light emitters without any external processing, using only in-situ high-density GaN nanostructures that were formed by overgrowth on a silicon nitride (SiNx) interlayer deposited by metal organic chemical vapor deposition. The nano-sized facets produced variations in the InGaN thickness and the indium concentration when an InGaN/GaN double heterostructure was monolithically grown on them, leading to white-color light emission. It is important to note that the in-situ SiNx interlayer not only facilitated the GaN nano-facet structure, but also blocked the propagation of dislocations.

  5. High flux and high quality FEL resonator mirrors

    SciTech Connect

    Anthony, F.M.; Mistretta, A.L.; Tonnessen, T.W. )

    1989-08-01

    The Free Electron Laser Cooled Mirror Technology Development Program was highly successful; this technology can be applied to cooled silicon mirror requirements for RF linac FEL's. Designs were developed for a 100 cm hyperboloid subjected to a peak absorbed flux of 1000 w/cm[sup 2] and for a 50 cm paraboloid with an absorbed peak flux of 500 w/cm[sup 2]. Although the design concepts were essentially the same detailed implementation was somewhat different for each of the mirrors. Both designs incorporated variable geometry and internal flow tailoring over the planform area so as to produce a near spherical distortion response to the input Gaussian power distribution. This enhanced correctability of the overall distortion such that the net distortion was only 0.2 A/(w/cm[sup 2]) after correction for sphere, piston and bit as compared to a design goal of 0.5 A/(w/cm[sup 2]). Structural integrity testing of small samples, that incorporated internal geometries of both types of mirrors, verified the adequacy of the designs. Fabrication of the different types of test specimens demonstrated the producibility of the configurations. Planform bonding of manifold simulations was successful; they type of bonding is required to produce a 50 cm diameter circular silicon mirror from boules that are somewhat smaller in diameter. After planform bonding of preforms they were machined, etched, assembled into pressure test specimens, and burst pressure tested. The average burst pressure of 1550 psig was somewhat stronger than early SHOP specimens of the same configuration but somewhat lower than more recently produced specimens which evidenced burst pressure strengths of 2500 psig. Demonstrated planform bond strengths are more than adequate for the mirrors of interest, better performance can be expected as the bonding precess is refined. These, and the other experimental results indicate the large factor of safety provided by the designs.

  6. High flux and high quality FEL resonator mirrors. Final report

    SciTech Connect

    Anthony, F.M.; Mistretta, A.L.; Tonnessen, T.W.

    1989-08-01

    The Free Electron Laser Cooled Mirror Technology Development Program was highly successful; this technology can be applied to cooled silicon mirror requirements for RF linac FEL`s. Designs were developed for a 100 cm hyperboloid subjected to a peak absorbed flux of 1000 w/cm{sup 2} and for a 50 cm paraboloid with an absorbed peak flux of 500 w/cm{sup 2}. Although the design concepts were essentially the same detailed implementation was somewhat different for each of the mirrors. Both designs incorporated variable geometry and internal flow tailoring over the planform area so as to produce a near spherical distortion response to the input Gaussian power distribution. This enhanced correctability of the overall distortion such that the net distortion was only 0.2 A/(w/cm{sup 2}) after correction for sphere, piston and bit as compared to a design goal of 0.5 A/(w/cm{sup 2}). Structural integrity testing of small samples, that incorporated internal geometries of both types of mirrors, verified the adequacy of the designs. Fabrication of the different types of test specimens demonstrated the producibility of the configurations. Planform bonding of manifold simulations was successful; they type of bonding is required to produce a 50 cm diameter circular silicon mirror from boules that are somewhat smaller in diameter. After planform bonding of preforms they were machined, etched, assembled into pressure test specimens, and burst pressure tested. The average burst pressure of 1550 psig was somewhat stronger than early SHOP specimens of the same configuration but somewhat lower than more recently produced specimens which evidenced burst pressure strengths of 2500 psig. Demonstrated planform bond strengths are more than adequate for the mirrors of interest, better performance can be expected as the bonding precess is refined. These, and the other experimental results indicate the large factor of safety provided by the designs.

  7. Si Donor Incorporation in GaN Nanowires.

    PubMed

    Fang, Zhihua; Robin, Eric; Rozas-Jiménez, Elena; Cros, Ana; Donatini, Fabrice; Mollard, Nicolas; Pernot, Julien; Daudin, Bruno

    2015-10-14

    With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a carrier concentration from 10(17) to 10(20) cm(-3). Field effect transistor (FET) measurements combined with finite element simulation by NextNano(3) software have put in evidence the high mobility of carriers in the nonintentionally doped (NID) NWs. PMID:26426262

  8. High Quality Preschool Programs: What Would Vygotsky Say?

    ERIC Educational Resources Information Center

    Bodrova, Elena; Leong, Deborah J.

    2005-01-01

    The paper considers the definition of high quality preschool from a Vygotskian perspective. Similarities and differences in the issues faced in Russia and those in the United States are discussed as background. Three major ideas are considered from the work of Vygotsky and of his students/colleagues, Daniel Elkonin and Alexander Zaporozhets. The…

  9. The impact of high speed roller ginning on yarn quality

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Recent advance in cotton ginning technology have resulted in increases in the speed, throughput, and overall economics of roller ginning to make it competitive with conventional saw ginning. The present study was aimed at determining if the improvements in fiber quality, i.e. longer fibers with high...

  10. Attracting and Retaining High-Quality Professionals in Science Education.

    ERIC Educational Resources Information Center

    Weld, Jeffrey

    1998-01-01

    To attract and retain high-quality teachers, the education system must address science teachers' sense of professional isolation, administrators' lack of receptivity to thoughtful teachers' ideas, egalitarian salary compensation schemes, and lack of professional recognition. An outstanding chemistry teacher-turned-pharmaceutical saleswoman is…

  11. Novel, high-quality surface plasmon resonance microscopy

    PubMed Central

    Thariani, Rahber; Yager, Paul

    2016-01-01

    A surface plasmon resonance microscope capable of high-quality speckle-free imaging has been designed that uses a laser as a source. An inexpensive acoustic transducer is used to reduce speckle and other image artifacts arising from the use of illumination from an inexpensive laser pointer. The microscope is described and operation of the system demonstrated.

  12. Improved electrode gives high-quality biological recordings

    NASA Technical Reports Server (NTRS)

    Day, J. L.; Lippitt, M. W.

    1964-01-01

    To obtain high quality waveforms from a subject engaged in physical activity, an improved electrode assembly has been devised. This consists of a cup containing an electrically conductive paste and a silver electrode. The paste maintains contact between the skin and the plate.

  13. Child Care: Use of Standards To Ensure High Quality Care.

    ERIC Educational Resources Information Center

    General Accounting Office, Washington, DC. Health, Education, and Human Services Div.

    Prepared to assist Congress in its deliberations of various child care proposals, this report identifies key child care center standards that are critical in helping to ensure high quality child care. The article also examines the extent to which states incorporate these standards into their own standards, and discusses other important issues that…

  14. High-quality Health Information Provision for Stroke Patients

    PubMed Central

    Du, Hong-Sheng; Ma, Jing-Jian; Li, Mu

    2016-01-01

    Objective: High-quality information provision can allow stroke patients to effectively participate in healthcare decision-making, better manage the stroke, and make a good recovery. In this study, we reviewed information needs of stroke patients, methods for providing information to patients, and considerations needed by the information providers. Data Sources: The literature concerning or including information provision for patients with stroke in English was collected from PubMed published from 1990 to 2015. Study Selection: We included all the relevant articles on information provision for stroke patients in English, with no limitation of study design. Results: Stroke is a major public health concern worldwide. High-quality and effective health information provision plays an essential role in helping patients to actively take part in decision-making and healthcare, and empowering them to effectively self-manage their long-standing chronic conditions. Different methods for providing information to patients have their relative merits and suitability, and as a result, the effective strategies taken by health professionals may include providing high-quality information, meeting patients’ individual needs, using suitable methods in providing information, and maintaining active involvement of patients. Conclusions: It is suggested that to enable stroke patients to access high-quality health information, greater efforts need to be made to ensure patients to receive accurate and current evidence-based information which meets their individual needs. Health professionals should use suitable information delivery methods, and actively involve stroke patients in information provision. PMID:27569241

  15. Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si

    NASA Astrophysics Data System (ADS)

    Okur, S.; Izyumskaya, N.; Zhang, F.; Avrutin, V.; Metzner, S.; Karbaum, C.; Bertram, F.; Christen, J.; Morkoç, H.; Özgür, Ü.

    2014-03-01

    The optical quality of semipolar (1 101)GaN layers was explored by time- and polarization-resolved photoluminescence spectroscopy. High intensity bandedge emission was observed in +c-wing regions of the stripes as a result of better structural quality, while -c-wing regions were found to be of poorer optical quality due to basal plane and prismatic stacking faults (BSFs and PSFs) in addition to a high density of TDs. The high optical quality region formed on the +cwings was evidenced also from the much slower biexponential PL decays (0.22 ns and 1.70 ns) and an order of magnitude smaller amplitude ratio of the fast decay (nonradiative origin) to the slow decay component (radiative origin) compared to the -c-wing regions. In regard to defect-related emission, decay times for the BSF and PSF emission lines at 25 K (~ 0.80 ns and ~ 3.5 ns, respectively) were independent of the excitation density within the range employed (5 - 420 W/cm2), and much longer than that for the donor bound excitons (0.13 ns at 5 W/cm2 and 0.22 ns at 420 W/cm2). It was also found that the emission from BSFs had lower polarization degree (0.22) than that from donor bound excitons (0.35). The diminution of the polarization degree when photogenerated carriers recombine within the BSFs is another indication of the negative effects of stacking faults on the optical quality of the semipolar (1101)GaN. In addition, spatial distribution of defects in semipolar (1101)-oriented InGaN active region layers grown on stripe patterned Si substrates was investigated using near-field scanning optical microscopy. The optical quality of -c- wing regions was found to be worse compared to +c-wing regions due to the presence of higher density of stacking faults and threading dislocations. The emission from the +c-wings was very bright and relatively uniform across the sample, which is indicative of a homogeneous In distribution.

  16. Energy dependence of electron inelastic mean free paths in bulk GaN crystals

    NASA Astrophysics Data System (ADS)

    Krawczyk, M.; Zommer, L.; Jablonski, A.; Grzegory, I.; Bockowski, M.

    2004-09-01

    Recent advances in fabrication and commercialization of high-brightness blue and green light-emitting devices based on gallium nitride have renewed intense research of its basic properties. Since information on electron transport processes in GaN is scarce, their systematic studies are highly desirable. The electron inelastic mean free path (IMFP) is a crucial parameter for quantitative interpretation of surface electron spectra. The energy dependence of IMFP for bulk GaN crystals with different surface concentrations of their constituents was obtained from elastic peak electron spectroscopy (EPES) with use of the Ni standard in the energy range 200-2000 eV. The measured IMFPs were compared with the values predicted by the TPP-2M and G-1 formulae. A reasonable agreement was found between the measured IMFPs in bulk GaN with an ideal stoichiometric surface composition and the corresponding calculated IMFPs. Compared with the bulk IMFPs, experimental IMFPs valid for the GaN sample with a thin surface layer enriched in ˜70 at.% Ga are only slightly smaller by 5-10%, depending on the electron energy.

  17. Electron Beam-induced Light Emission and Transport in GaN Nanowires

    SciTech Connect

    Tringe, J W; MoberlyChan, W J; Stevens, C G; Davydov, A V; Motayed, A

    2006-05-10

    We report observations of electron beam-induced light from GaN nanowires grown by chemical vapor deposition. GaN nanowires were modified in-situ with deposited opaque platinum coatings to estimate the extent to which light is channeled to the ends of nanowires. Some evidence of light channeling was found, but wire microstructure and defects play an important role in light scattering and transport, limiting the extent to which light is confined. Optical interconnects are powerful components presently applied for high bandwidth communications among high-performance processors. Future circuits based on nanometer-scale components could similarly benefit from optical information transfer among processing blocks. Strong light channeling (and even lasing) has been observed in GaN nanowires, suggesting that these structures could be useful building blocks in a future networked electro-optical processor. However, the extent to which defects and microstructure control optical performance in nanowire waveguides has not been measured. In this study, we use electron microscopy and in-situ modification of individual nanowires to begin to correlate wire structure with light transport efficiency through GaN nanowires tens of microns long.

  18. Increased thermal conductivity of free-standing low-dislocation-density GaN films

    NASA Astrophysics Data System (ADS)

    Liu, Weili; Balandin, Alexander A.; Lee, Changho; Lee, Hae-Yong

    2005-09-01

    Proposed high-power electronic and optoelectronic applications of GaN materials rely heavily on the effectiveness of heat removal from the devices. Here we report the results of our measurements of thermal conductivity in the thick free-standing GaN films prepared by hydride vapor phase epitaxy. The fabrication method allows one to grow the low-dislocation density films without the use of non-native substrates. Our experimental data show that the room tempera- ture thermal conductivity in free-standing GaN films can be as high at 225 W/mK, which is a factor of 1.8 increase compared to a reference GaN film grown on sapphire substrate. The modeling, performed for the given sample parameters, indicates that the low-temperature thermal conductivity can reach a record value of 7460 W/mK. The presented results are important for the thermal management optimization of GaN-based devices.

  19. U.S. Department of Energy, National Energy Technology Laboratory Solid-State Lighting Core Technologies Light Emitting Diodes on Semipolar Bulk GaN Substrate with IQE > 80% at 150 A/cm2 and 100 0C

    SciTech Connect

    Chakraborty, Arpan; David, Aurelien; Grundmann, Michael; Tyagi, Anurag; Craven, Michael; Hurni, Christophe; Cich, Michael

    2015-03-31

    GaN is a crucial material for light-emitting diodes (LEDs) emitting in the violet-to-green range. Despite its good performance, it still suffers from significant technical limitations. In particular, the efficiency of GaN-based LEDs decreases at high current (“current droop”) and high temperature (“temperature droop”). This is problematic in some lighting applications, where a high-power operation is required. This program studied the use of particular substrates to improve the efficiency of GaN-based LEDs: bulk semipolar (SP) GaN substrates. These substrates possess a very high material quality, and physical properties which are distinctly different from legacy substrates currently used in the LED industry. The program focused on the development of accurate metrology to quantify the performance of GaN-based LEDs, and on improvement to LED quality and design on SP substrates. Through a thorough optimization process, we demonstrated violet LEDs with very high internal quantum efficiency, exceeding 85% at high temperature and high current. We also investigated longer-wavelength blue emitters, but found that the limited strain budget was a key limitation.

  20. Method for producing high quality thin layer films on substrates

    DOEpatents

    Strongin, M.; Ruckman, M.; Strongin, D.

    1994-04-26

    A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate. 4 figures.