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Sample records for high voltage gain

  1. High-gain optical Cherenkov oscillator driven by low-voltage electron beam

    SciTech Connect

    Smetanin, I.V.; Oraevsky, A.N.

    1995-12-31

    A novel scheme of high-gain optical (from IR up to UV) Cherenkov-type oscillator driven by low-voltage high-current electron beam is proposed in the present report. In the scheme discussed the magnetized electron beam propagates above the surface of absorbing medium of complex dielectric susceptibility {epsilon}{omega} = {epsilon}{sub 1}({omega}) + i{epsilon}{sub 2}({omega}), {epsilon}{sub 2}>0. We have found that at frequencies {omega} that {beta}{sup 2}> 2{epsilon}{sub 1}/{vert_bar}{epsilon}{vert_bar}{sup 2} ({beta} = v/c, v is the electron velocity), an amplification of co-propagating slow surface electromagnetic wave is possible. In contrast to the conventional Cherenkov oscillators, the absorption condition {epsilon}2>0 is crucial for the gain, which is absent for transparent medium. The physics of this amplification effect is analogous to that of electron beam dissipative instability. The wavelength generated is determined here by dielectric properties of the surface, and does not depend strongly on electron energy. Thus it is possible to use rather compact low voltage ({le} 1MeV) high-current accelerators as drivers. Optimum oscillation conditions are found to be at frequencies near the resonance absorption lines of surface material (i.e. from IR up to UV). The gain up to {approximately}0.5cm{sup -1} in the near IR ({approximately}10THz, SrF{sub 2} absorption line) is possible for 250keV high current (density {approximately}10{sup 12}cm{sup -3}) electron beam.

  2. Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures

    NASA Astrophysics Data System (ADS)

    Oliveira, Alberto Vinicius de; Agopian, Paula Ghedini Der; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor; Collaert, Nadine; Thean, Aaron

    2016-09-01

    This paper presents an experimental analysis of the analog application figures of merit: the intrinsic voltage gain (AV) and unit gain frequency, focusing on the performance comparison between silicon triple gate pFinFET devices, which were processed on both Si and Silicon-On-Insulator (SOI) substrates. The high temperature (from 25 °C to 150 °C) influence and different channel lengths and fin widths were also taken into account. While the temperature impact on the intrinsic voltage gain (AV) is limited, the unit gain frequency was strongly affected due to the carrier mobility degradation at higher temperatures, for both p- and n-type FinFET structures. In addition, the pFinFETs showed slightly larger AV values compared to the n-type counterparts, whereby the bulk FinFETs presented a higher dispersion than the SOI FinFETs.

  3. A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain

    NASA Astrophysics Data System (ADS)

    Deng, Yong-Hui; Xie, Gang; Wang, Tao; Sheng, Kuang

    2013-09-01

    In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base field plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3 × 1017 cm-3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT (VBJT) with comparable breakdown voltage (3357 V) shows that the minimum base width of 0.25 μm and base doping as high as 8 × 1017 cm-3 contribute to a maximum current gain of only 128.

  4. Multi-level quantum electrodynamic calculation of spontaneous emission and small signal gain in high voltage free electron lasers

    NASA Astrophysics Data System (ADS)

    Chang, C. S.; Fluhler, H. U.

    1991-12-01

    Using the Weisskopf-Wigner technique, a self consistent quantum electrodynamic (SCQED) theory of spontaneous emission of radiation and single photon small signal gain is developed for high voltage free electron lasers (FEL). Excellent agreement is obtained simultaneously to our knowledge for the first time between the predictions and the experimental observations for lineshift, linewidth and gain. The SCQED theory predicts lineshift and broadening due to quantum mechanical effects for linear, helical and tapered undulator FELs which are not predicted by the classical/conventional FEL theories, but which have been observed 4,5,18,22,23,45,46. Excellent agreement is obtained between the SCQED theory predicted spontaneous emission spectra and the 1980?81 ACO FEL4,18, ACO Optical Klystron FEL45,46, Stanford 10.6 ?m FEL22 and Stanford 3.4 ?m FEL23 experimental spectra. This agreement is much better than the prediction from the classical/conventional FEL theory which gives errors of many tens of percent. We show that the spontaneous emission spectrum obtained from classical/conventional FEL theories is valid only in the limit of a short undulator containing a small number of periods. The small signal gain derived from the SCQED theory is shown to reduce to Colson's gain formula12,34 in the classical limit. However, the SCQED theory predicts significant reductions in the small signal gain which agree well with the ACO gain data5, and are not predicted well by Colson's formula. Due to the non-neglible finite electron state lifetime, it is discovered that a fundamental physical gain limit exists which is universal to all types of FELs within the limits of the single photon transition scheme considered (i.e. if multiphoton effects are ignored). Finally, the implications of the theoretically obtained results are discussed for practical conditions of experimental interest. It is shown that under practical experimental conditions quantum effects can be quite important in the

  5. Modelling of nonisolated high-voltage gain boost converters using the PWM switch model

    NASA Astrophysics Data System (ADS)

    Janeth Acosta Alcazar, Yblin; Lessa Tofoli, Fernando; de Souza Oliveira, Demercil, Jr.; Pastor Torrico-Bascopé, René

    2014-08-01

    This paper presents the small-signal models for nonisolated dc-dc boost converters based on the three-state switching cell (3SSC) and voltage multiplier cells (VMCs) by using the concept of pulse-width modulation switch introduced by Vorpérian. Two possible topologies are analysed in the study using one multiplier cell (VMC = 1) and two multiplier cells (VMC = 2). The models are validated by properly comparing the theoretical curves with those obtained in simulation tests. Besides, conventional average current-mode control is implemented in practice for the topology with VMC = 2. An experimental prototype rated at 1 kW is evaluated so that it can be seen that the control system is stable and the dynamic response of the converter is satisfactory.

  6. Gain results for low voltage FEL

    SciTech Connect

    Shaw, A.; Stuart, R.A.; Al-Shamma`a, A.

    1995-12-31

    We have designed and constructed a low voltage (130 kV) FEL system capable of operating in the microwave frequency range for which the electron beam current is cw (rather than pulsed) in time at a level of {approximately} 12 mA. The gain of this system has been measured as a function of the electron beam accelerating voltage and current level, and the input microwave frequency (8-10 GHz). The results are compared with the predictions of a simple theoretical model.

  7. HIGH VOLTAGE GENERATOR

    DOEpatents

    Zito, G.V.

    1959-04-21

    This patent relates to high voltage supply circuits adapted for providing operating voltages for GeigerMueller counter tubes, and is especially directed to an arrangement for maintaining uniform voltage under changing conditions of operation. In the usual power supply arrangement for counter tubes the counter voltage is taken from across the power supply output capacitor. If the count rate exceeds the current delivering capaciiy of the capacitor, the capacitor voltage will drop, decreasing the counter voltage. The present invention provides a multivibrator which has its output voltage controlled by a signal proportional to the counting rate. As the counting rate increases beyond the current delivering capacity of the capacitor, the rectified voltage output from the multivibrator is increased to maintain uniform counter voltage.

  8. High Voltage SPT Performance

    NASA Technical Reports Server (NTRS)

    Manzella, David; Jacobson, David; Jankovsky, Robert

    2001-01-01

    A 2.3 kW stationary plasma thruster designed to operate at high voltage was tested at discharge voltages between 300 and 1250 V. Discharge specific impulses between 1600 and 3700 sec were demonstrated with thrust between 40 and 145 mN. Test data indicated that discharge voltage can be optimized for maximum discharge efficiency. The optimum discharge voltage was between 500 and 700 V for the various anode mass flow rates considered. The effect of operating voltage on optimal magnet field strength was investigated. The effect of cathode flow rate on thruster efficiency was considered for an 800 V discharge.

  9. HIGH VOLTAGE REGULATOR

    DOEpatents

    Wright, B.T.

    1959-06-01

    A high voltage regulator for use with calutrons is described which rapidly restores accelerating voltage after a sudden drop such as is caused by sparking. The rapid restoration characteristic prevents excessive contamination of lighter mass receiver pockets by the heavier mass portion of the beam. (T.R.H.)

  10. High voltage power supply

    NASA Technical Reports Server (NTRS)

    Ruitberg, A. P.; Young, K. M. (Inventor)

    1985-01-01

    A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

  11. High voltage pulse generator

    DOEpatents

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  12. Helicopter high gain control

    NASA Technical Reports Server (NTRS)

    Cunningham, T. B.; Nunn, E. C.

    1979-01-01

    High gain control is explored through a design study of the CH-47B helicopter. The plans are designed to obtain the maximum bandwidth possible given the hardware constraints. Controls are designed with modal control theory to specific bandwidths and closed loop mode shapes. Comparisons are made to an earlier complementary filter approach. Bandwidth improvement by removal of limitations is explored in order to establish hardware and mechanization options. Improvements in the pitch axis control system and in the rate gyro sensor noise characteristics in all axes are discussed. The use of rotor state feedback is assessed.

  13. Collapsible high gain antenna

    NASA Technical Reports Server (NTRS)

    Cribb, H. E. (Inventor)

    1973-01-01

    A lightweight small high gain antenna which is capable of being packaged in a collapsed form and automatically expanded when in use is described. The antenna includes a cylindrical housing having a rod with a piston adjacent to one end extending through it. Attached to the outer end of the rod in a normally collapsed state is a helical wire coil. When the gas producing means is activated the piston and rod are shifted outwardly to expand the wire coil. A latch is provided for holding the helical coil in the expanded position.

  14. High voltage distributed amplifier

    NASA Astrophysics Data System (ADS)

    Willems, D.; Bahl, I.; Wirsing, K.

    1991-12-01

    A high-voltage distributed amplifier implemented in GaAs MMIC technology has demonstrated good circuit performance over at least two octave bandwidth. This technique allows for very broadband amplifier operation with good efficiency in satellite, active-aperture radar, and battery-powered systems. Also, by increasing the number of FETs, the amplifier can be designed to match different voltage rails. The circuit does require a small amount of additional chip size over conventional distributed amplifiers but does not require power dividers or additional matching networks. This circuit configuration should find great use in broadband power amplifier design.

  15. Compact high voltage battery

    SciTech Connect

    Kinsman, G.F.; Land, E.H.

    1980-03-18

    A high voltage, low impedance laminar battery comprising a stack of series connected cells confined under pressure in a housing is described. The cells comprise laminar anodes, cathodes and separators. The cells are connected in series by laminar conductive intercell connectors. An annular spacer is associated with each cell. The spacers are separated by interdigitated ones of the separators and intercell connectors.

  16. High Voltage Insulation Technology

    NASA Astrophysics Data System (ADS)

    Scherb, V.; Rogalla, K.; Gollor, M.

    2008-09-01

    In preparation of new Electronic Power Conditioners (EPC's) for Travelling Wave Tub Amplifiers (TWTA's) on telecom satellites a study for the development of new high voltage insulation technology is performed. The initiative is mandatory to allow compact designs and to enable higher operating voltages. In a first task a market analysis was performed, comparing different materials with respect to their properties and processes. A hierarchy of selection criteria was established and finally five material candidates (4 Epoxy resins and 1 Polyurethane resin) were selected to be further investigated in the test program. Samples for the test program were designed to represent core elements of an EPC, the high voltage transformer and Printed Circuit Boards of the high voltage section. All five materials were assessed in the practical work flow of the potting process and electrical, mechanical, thermal and lifetime testing was performed. Although the lifetime tests results were overlayed by a larges scatter, finally two candidates have been identified for use in a subsequent qualification program. This activity forms part of element 5 of the ESA ARTES Programme.

  17. High voltage variable diameter insulator

    DOEpatents

    Vanacek, D.L.; Pike, C.D.

    1982-07-13

    A high voltage feedthrough assembly having a tubular insulator extending between the ground plane ring and the high voltage ring. The insulator is made of Pyrex and decreases in diameter from the ground plane ring to the high voltage ring, producing equipotential lines almost perpendicular to the wall of the insulator to optimize the voltage-holding capability of the feedthrough assembly.

  18. High Voltage Seismic Generator

    NASA Astrophysics Data System (ADS)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  19. High voltage pulse conditioning

    DOEpatents

    Springfield, Ray M.; Wheat, Jr., Robert M.

    1990-01-01

    Apparatus for conditioning high voltage pulses from particle accelerators in order to shorten the rise times of the pulses. Flashover switches in the cathode stalk of the transmission line hold off conduction for a determinable period of time, reflecting the early portion of the pulses. Diodes upstream of the switches divert energy into the magnetic and electrostatic storage of the capacitance and inductance inherent to the transmission line until the switches close.

  20. Insulators for high voltages

    SciTech Connect

    Looms, J.S.T.

    1987-01-01

    This book describes electrical insulators for high voltage applications. Topics considered include the insulating materials, the manufacture of wet process porcelain, the manufacture of tempered glass, the glass-fibre core, the polymeric housing, the common problem - terminating an insulator, mechanical constraints, the physics of pollution flashover, the physics of contamination, testing of insulators, conclusions from testing, remedies for flashover, insulators for special cases, interference and noise, and the insulator of the future.

  1. HIGH VOLTAGE GENERATOR

    DOEpatents

    Schwemin, A.J.

    1959-03-17

    A generator is presented for producing relatively large currents at high voltages. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  2. High voltage generator

    DOEpatents

    Schwemin, A. J.

    1959-03-17

    A generator for producing relatively large currents at high voltages is described. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The above-noted circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  3. HIGH VOLTAGE ION SOURCE

    DOEpatents

    Luce, J.S.

    1960-04-19

    A device is described for providing a source of molecular ions having a large output current and with an accelerated energy of the order of 600 kv. Ions are produced in an ion source which is provided with a water-cooled source grid of metal to effect maximum recombination of atomic ions to molecular ions. A very high accelerating voltage is applied to withdraw and accelerate the molecular ions from the source, and means are provided for dumping the excess electrons at the lowest possible potentials. An accelerating grid is placed adjacent to the source grid and a slotted, grounded accelerating electrode is placed adjacent to the accelerating grid. A potential of about 35 kv is maintained between the source grid and accelerating grid, and a potential of about 600 kv is maintained between the accelerating grid and accelerating electrode. In order to keep at a minimum the large number of oscillating electrons which are created when such high voltages are employed in the vicinity of a strong magnetic field, a plurality of high voltage cascaded shields are employed with a conventional electron dumping system being employed between each shield so as to dump the electrons at the lowest possible potential rather than at 600 kv.

  4. High voltage DC power supply

    DOEpatents

    Droege, T.F.

    1989-12-19

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

  5. High voltage DC power supply

    DOEpatents

    Droege, Thomas F.

    1989-01-01

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

  6. APPARATUS FOR REGULATING HIGH VOLTAGE

    DOEpatents

    Morrison, K.G.

    1951-03-20

    This patent describes a high-voltage regulator of the r-f type wherein the modulation of the r-f voltage is accomplished at a high level, resulting in good stabilization over a large range of load conditions.

  7. Crystal oscillators using negative voltage gain, single pole response amplifiers

    NASA Technical Reports Server (NTRS)

    Kleinberg, Leonard L. (Inventor)

    1989-01-01

    A simple and inexpensive crystal oscillator is provided which employs negative voltage gain, single pole response amplifiers. The amplifiers may include such configurations as gate inverters, operational amplifiers and conventional bipolar transistor amplifiers, all of which operate at a frequency which is on the roll-off portion of their gain versus frequency curve. Several amplifier feedback circuit variations are employed to set desired bias levels and to allow the oscillator to operate at the crystal's fundamental frequency or at an overtone of the fundamental frequency. The oscillator is made less expensive than comparable oscillators by employing relatively low frequency amplifiers and operating them at roll-off, at frequencies beyond which they are customarily used. Simplicity is provided because operation at roll-off eliminates components ordinarily required in similar circuits to provide sufficient phase-shift in the feedback circuitry for oscillation to occur.

  8. High voltage variable diameter insulator

    DOEpatents

    Vanecek, David L.; Pike, Chester D.

    1984-01-01

    A high voltage feedthrough assembly (10) having a tubular insulator (15) extending between the ground plane ring (16) and the high voltage ring (30). The insulator (15) is made of Pyrex and decreases in diameter from the ground plane ring (16) to the high voltage ring (30), producing equipotential lines almost perpendicular to the wall (27) of the insulator (15) to optimize the voltage-holding capability of the feedthrough assembly (10).

  9. High voltage isolation transformer

    NASA Technical Reports Server (NTRS)

    Clatterbuck, C. H.; Ruitberg, A. P. (Inventor)

    1985-01-01

    A high voltage isolation transformer is provided with primary and secondary coils separated by discrete electrostatic shields from the surfaces of insulating spools on which the coils are wound. The electrostatic shields are formed by coatings of a compound with a low electrical conductivity which completely encase the coils and adhere to the surfaces of the insulating spools adjacent to the coils. Coatings of the compound also line axial bores of the spools, thereby forming electrostatic shields separating the spools from legs of a ferromagnetic core extending through the bores. The transformer is able to isolate a high constant potential applied to one of its coils, without the occurrence of sparking or corona, by coupling the coatings, lining the axial bores to the ferromagnetic core and by coupling one terminal of each coil to the respective coating encasing the coil.

  10. High Voltage TAL Performance

    NASA Technical Reports Server (NTRS)

    Jacobson, David T.; Jankovsky, Robert S.; Rawlin, Vincent K.; Manzella, David H.

    2001-01-01

    The performance of a two-stage, anode layer Hall thruster was evaluated. Experiments were conducted in single and two-stage configurations. In single-stage configuration, the thruster was operated with discharge voltages ranging from 300 to 1700 V. Discharge specific impulses ranged from 1630 to 4140 sec. Thruster investigations were conducted with input power ranging from 1 to 8.7 kW, corresponding to power throttling of nearly 9: 1. An extensive two-stage performance map was generated. Data taken with total voltage (sum of discharge and accelerating voltage) constant revealed a decrease in thruster efficiency as the discharge voltage was increased. Anode specific impulse values were comparable in the single and two-stage configurations showing no strong advantage for two-stage operation.

  11. Low voltage to high voltage level shifter and related methods

    NASA Technical Reports Server (NTRS)

    Mentze, Erik J. (Inventor); Hess, Herbert L. (Inventor); Buck, Kevin M. (Inventor); Cox, David F. (Inventor)

    2006-01-01

    A shifter circuit comprises a high and low voltage buffer stages and an output buffer stage. The high voltage buffer stage comprises multiple transistors arranged in a transistor stack having a plurality of intermediate nodes connecting individual transistors along the stack. The transistor stack is connected between a voltage level being shifted to and an input voltage. An inverter of this stage comprises multiple inputs and an output. Inverter inputs are connected to a respective intermediate node of the transistor stack. The low voltage buffer stage has an input connected to the input voltage and an output, and is operably connected to the high voltage buffer stage. The low voltage buffer stage is connected between a voltage level being shifted away from and a lower voltage. The output buffer stage is driven by the outputs of the high voltage buffer stage inverter and the low voltage buffer stage.

  12. Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors

    PubMed Central

    Song, Seung Min; Bong, Jae Hoon; Hwang, Wan Sik; Cho, Byung Jin

    2016-01-01

    Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequency and voltage gain, both of which should be improved for RF transistors. Achieving a high output resistance is therefore a crucial step for graphene to be utilized in RF applications. In the present study, we report high output resistances and voltage gains in graphene-on-silicon (GoS) FETs. This is achieved by utilizing bare silicon as a supporting substrate without an insulating layer under the graphene. The GoSFETs exhibit a maximum output resistance of 2.5 MΩ∙μm, maximum intrinsic voltage gain of 28 dB, and maximum voltage gain of 9 dB. This method opens a new route to overcome the limitations of conventional graphene-on-insulator (GoI) FETs and subsequently brings graphene electronics closer to practical usage. PMID:27142861

  13. Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors.

    PubMed

    Song, Seung Min; Bong, Jae Hoon; Hwang, Wan Sik; Cho, Byung Jin

    2016-01-01

    Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequency and voltage gain, both of which should be improved for RF transistors. Achieving a high output resistance is therefore a crucial step for graphene to be utilized in RF applications. In the present study, we report high output resistances and voltage gains in graphene-on-silicon (GoS) FETs. This is achieved by utilizing bare silicon as a supporting substrate without an insulating layer under the graphene. The GoSFETs exhibit a maximum output resistance of 2.5 MΩ∙μm, maximum intrinsic voltage gain of 28 dB, and maximum voltage gain of 9 dB. This method opens a new route to overcome the limitations of conventional graphene-on-insulator (GoI) FETs and subsequently brings graphene electronics closer to practical usage. PMID:27142861

  14. Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Song, Seung Min; Bong, Jae Hoon; Hwang, Wan Sik; Cho, Byung Jin

    2016-05-01

    Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequency and voltage gain, both of which should be improved for RF transistors. Achieving a high output resistance is therefore a crucial step for graphene to be utilized in RF applications. In the present study, we report high output resistances and voltage gains in graphene-on-silicon (GoS) FETs. This is achieved by utilizing bare silicon as a supporting substrate without an insulating layer under the graphene. The GoSFETs exhibit a maximum output resistance of 2.5 MΩ•μm, maximum intrinsic voltage gain of 28 dB, and maximum voltage gain of 9 dB. This method opens a new route to overcome the limitations of conventional graphene-on-insulator (GoI) FETs and subsequently brings graphene electronics closer to practical usage.

  15. Self-consistent quantum-electrodynamic calculation of spontaneous emission and small-signal gain in high-voltage free-electron lasers

    NASA Astrophysics Data System (ADS)

    Chang, C. S.; Fluhler, H. U.

    1990-10-01

    A self-consistent QED (SCQED) theory of spontaneous emission of radiation and single-photon small-signal gain (SSG) is developed for FELs using the Weisskopf-Wigner method. The results agree with existing experimental data on both the line broadening and the line shift and to a reasonable extent with the measured gain. It is shown that the spontaneous-emission spectrum obtained from classical or conventional FEL theories is valid only in the limit of a short undulator that contains a small number of periods. The SSG derived from the SCQED theory is shown to reduce to Colson's (1977) gain formula in the classical limit. However, the SCQED theory predicts significant reductions in the SSG that agree well with the ACO gain data and are not predicted well by Colson's formula. It is discovered that a fundamental physical gain limit exists that is universal to all types of FELs within the limits of the single-photon transition scheme considered.

  16. Temperature controlled high voltage regulator

    DOEpatents

    Chiaro, Jr., Peter J.; Schulze, Gerald K.

    2004-04-20

    A temperature controlled high voltage regulator for automatically adjusting the high voltage applied to a radiation detector is described. The regulator is a solid state device that is independent of the attached radiation detector, enabling the regulator to be used by various models of radiation detectors, such as gas flow proportional radiation detectors.

  17. High voltage lightning grounding device

    NASA Technical Reports Server (NTRS)

    Hoffman, R. G.; Peterson, V. S.

    1971-01-01

    Grounding device insertion in wire termination cabinets and terminal block modification prevent lightning-induced high voltage transients from reaching inputs or outputs of solid state instruments and control systems. Installation minimizes wiring confusion and achieves 100 percent protection.

  18. High voltage solar array experiments

    NASA Technical Reports Server (NTRS)

    Kennerud, K. L.

    1974-01-01

    The interaction between the components of a high voltage solar array and a simulated space plasma is studied to obtain data for the design of a high voltage solar array capable of 15kW at 2 to 16kV. Testing was conducted in a vacuum chamber 1.5-m long by 1.5-m diameter having a plasma source which simulated the plasma conditions existing in earth orbit between 400 nautical miles and synchronous altitude. Test samples included solar array segments pinholes in insulation covering high voltage electrodes, and plain dielectric samples. Quantitative data are presented in the areas of plasma power losses, plasma and high voltage induced damage, and dielectric properties. Limitations of the investigation are described.

  19. Improved Programmable High-Voltage Power Supply

    NASA Technical Reports Server (NTRS)

    Castell, Karen; Rutberg, Arthur

    1994-01-01

    Improved dc-to-dc converter functions as programmable high-voltage power supply with low-power-dissipation voltage regulator on high-voltage side. Design of power supply overcomes deficiencies of older designs. Voltage regulation with low power dissipation provided on high-voltage side.

  20. Mechanisms of gain control by voltage-gated channels in intrinsically-firing neurons.

    PubMed

    Patel, Ameera X; Burdakov, Denis

    2015-01-01

    Gain modulation is a key feature of neural information processing, but underlying mechanisms remain unclear. In single neurons, gain can be measured as the slope of the current-frequency (input-output) relationship over any given range of inputs. While much work has focused on the control of basal firing rates and spike rate adaptation, gain control has been relatively unstudied. Of the limited studies on gain control, some have examined the roles of synaptic noise and passive somatic currents, but the roles of voltage-gated channels present ubiquitously in neurons have been less explored. Here, we systematically examined the relationship between gain and voltage-gated ion channels in a conductance-based, tonically-active, model neuron. Changes in expression (conductance density) of voltage-gated channels increased (Ca2+ channel), reduced (K+ channels), or produced little effect (h-type channel) on gain. We found that the gain-controlling ability of channels increased exponentially with the steepness of their activation within the dynamic voltage window (voltage range associated with firing). For depolarization-activated channels, this produced a greater channel current per action potential at higher firing rates. This allowed these channels to modulate gain by contributing to firing preferentially at states of higher excitation. A finer analysis of the current-voltage relationship during tonic firing identified narrow voltage windows at which the gain-modulating channels exerted their effects. As a proof of concept, we show that h-type channels can be tuned to modulate gain by changing the steepness of their activation within the dynamic voltage window. These results show how the impact of an ion channel on gain can be predicted from the relationship between channel kinetics and the membrane potential during firing. This is potentially relevant to understanding input-output scaling in a wide class of neurons found throughout the brain and other nervous systems

  1. High Voltage Space Solar Arrays

    NASA Technical Reports Server (NTRS)

    Ferguson, D. C.; Hillard, G. B.; Vayner, B. V.; Galofaro, J. T.; Lyons, Valerie (Technical Monitor)

    2002-01-01

    Recent tests performed at the NASA Glenn Research Center and elsewhere have shown promise in the design and construction of high voltage (300-1000 V) solar arrays for space applications. Preliminary results and implications for solar array design will be discussed, with application to direct-drive electric propulsion and space solar power.

  2. LHCb calorimeters high voltage system

    NASA Astrophysics Data System (ADS)

    Gilitsky, Yu.; Golutvin, A.; Konoplyannikov, A.; Lefrancois, J.; Perret, P.; Schopper, A.; Soldatov, M.; Yakimchuk, V.

    2007-02-01

    The calorimeter system in LHCb aims to identify electrons, photons and hadrons. All calorimeters are equipped with Hamamatsu photo tubes as devices for light to signal conversion. Eight thousand R7899-20 tubes are used for electromagnetic and hadronic calorimeters and two hundred 64 channels multi-anode R7600-00-M64 for Scintillator-Pad/Preshower detectors. The calorimeter high voltage (HV) system is based on a Cockroft Walton (CW) voltage converter and a control board connected to the Experiment Control System (ECS) by serial bus. The base of each photomultiplier tube (PMT) is built with a high voltage converter and constructed on an individual printed circuit board, using compact surface mount components. The base is attached directly to the PMT. There are no HV cables in the system. A Field Programmable Gate Array (FPGA) is used on the control board as an interface between the ECS and the 200 control channels. The FPGA includes also additional functionalities allowing automated monitoring and ramp up of the high voltage values. This paper describes the HV system architecture, some technical details of the electronics implementation and summarizes the system performance. This safe and low power consumption HV electronic system for the photomultiplier tubes can be used for various biomedical apparatus too.

  3. High-Voltage Droplet Dispenser

    NASA Technical Reports Server (NTRS)

    Eichenberg, Dennis J.

    2003-01-01

    An apparatus that is extremely effective in dispensing a wide range of droplets has been developed. This droplet dispenser is unique in that it utilizes a droplet bias voltage, as well as an ionization pulse, to release a droplet. Apparatuses that deploy individual droplets have been used in many applications, including, notably, study of combustion of liquid fuels. Experiments on isolated droplets are useful in that they enable the study of droplet phenomena under well-controlled and simplified conditions. In this apparatus, a syringe dispenses a known value of liquid, which emerges from, and hangs onto, the outer end of a flat-tipped, stainless steel needle. Somewhat below the needle tip and droplet is a ring electrode. A bias high voltage, followed by a high-voltage pulse, is applied so as to attract the droplet sufficiently to pull it off the needle. The voltages are such that the droplet and needle are negatively charged and the ring electrode is positively charged.

  4. High-voltage CMOS detectors

    NASA Astrophysics Data System (ADS)

    Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

    2016-07-01

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented.

  5. High voltage photovoltaic power converter

    DOEpatents

    Haigh, Ronald E.; Wojtczuk, Steve; Jacobson, Gerard F.; Hagans, Karla G.

    2001-01-01

    An array of independently connected photovoltaic cells on a semi-insulating substrate contains reflective coatings between the cells to enhance efficiency. A uniform, flat top laser beam profile is illuminated upon the array to produce electrical current having high voltage. An essentially wireless system includes a laser energy source being fed through optic fiber and cast upon the photovoltaic cell array to prevent stray electrical signals prior to use of the current from the array. Direct bandgap, single crystal semiconductor materials, such as GaAs, are commonly used in the array. Useful applications of the system include locations where high voltages are provided to confined spaces such as in explosive detonation, accelerators, photo cathodes and medical appliances.

  6. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    DOEpatents

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  7. Fast thermonuclear ignition with two nested high current lower voltage - high voltage lower current magnetically insulated transmission lines

    NASA Astrophysics Data System (ADS)

    Winterberg, F.

    2003-11-01

    Fast thermonuclear ignition with a high gain seems possible with two Marx generators feeding two nested magnetically insulated transmission lines, one delivering a high current lower voltage pulse for compression and confinement, and one delivering a high voltage lower current pulse for fast ignition. With an input energy conceivably as small as 100 kJ the gain can be as large as 10 3. The concept not only would be by orders of magnitude less expensive than laser compression and fast ignition schemes, but because of the large gain with a small yield also be more suitable for a thermonuclear reactor.

  8. Crosstalk in x-ray framing cameras: Effect on voltage, gain, and timing (invited).

    PubMed

    Benedetti, L R; Bell, P M; Bradley, D K; Brown, C G; Glenn, S M; Heeter, R; Holder, J P; Izumi, N; Khan, S F; Lacaille, G; Simanovskaia, N; Smalyuk, V A; Thomas, R

    2012-10-01

    We present evidence that electromagnetic crosstalk between independent strips in gated x-ray framing cameras can affect relative gains by up to an order of magnitude and gate arrival times up to tens of picoseconds when strip separation times are less then ∼1 ns. Crosstalk is observed by multiple methods, and it is confirmed by direct measurements of voltage on the active surface of the detector and also by indirect voltage monitors in routine operation. The voltage measurements confirm that crosstalk is produced not only in the active regions of the microchannel plate, but also along the entire input path of the voltage pulses. PMID:23126956

  9. High Voltage TAL Erosion Characterization

    NASA Technical Reports Server (NTRS)

    Jacobson, David T.

    2003-01-01

    Extended operation of a D-80 anode layer thruster at high voltage was investigated. The thruster was operated for 1200 hours at 700 Volts and 4 Amperes. Laser profilometry was employed to quantify the erosion of the thruster's graphite guard rings and electrodes at 0, 300, 600, 900, and 1200 hours. Thruster performance and electrical characteristics were monitored over the duration of the investigation. The guard rings exhibited asymmetric erosion that was greatest in the region of the cathode. Erosion of the guard rings exposed the magnet poles between 600 to 900 hours of operation.

  10. High voltage RF feedthrough bushing

    DOEpatents

    Grotz, Glenn F.

    1984-01-01

    Described is a multi-element, high voltage radio frequency bushing for trmitting RF energy to an antenna located in a vacuum container. The bushing includes a center conductor of complex geometrical shape, an outer coaxial shield conductor, and a thin-walled hollow truncated cone insulator disposed between central and outer conductors. The shape of the center conductor, which includes a reverse curvature portion formed of a radially inwardly directed shoulder and a convex portion, controls the uniformity of the axial surface gradient on the insulator cone. The outer shield has a first substantially cylindrical portion and a second radially inwardly extending truncated cone portion.

  11. High current gain transistor laser.

    PubMed

    Liang, Song; Qiao, Lijun; Zhu, Hongliang; Wang, Wei

    2016-01-01

    A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors. However, light emission is produced at the expense of current gain for all the TLs reported up to now, leading to a very low current gain. We propose a novel design of TLs, which have an n-doped InP layer inserted in the emitter ridge. Numerical studies show that a current flow aperture for only holes can be formed in the center of the emitter ridge. As a result, the common emitter current gain can be as large as 143.3, which is over 15 times larger than that of a TL without the aperture. Besides, the effects of nonradiative recombination defects can be reduced greatly because the flow of holes is confined in the center region of the emitter ridge. PMID:27282466

  12. High current gain transistor laser

    NASA Astrophysics Data System (ADS)

    Liang, Song; Qiao, Lijun; Zhu, Hongliang; Wang, Wei

    2016-06-01

    A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors. However, light emission is produced at the expense of current gain for all the TLs reported up to now, leading to a very low current gain. We propose a novel design of TLs, which have an n-doped InP layer inserted in the emitter ridge. Numerical studies show that a current flow aperture for only holes can be formed in the center of the emitter ridge. As a result, the common emitter current gain can be as large as 143.3, which is over 15 times larger than that of a TL without the aperture. Besides, the effects of nonradiative recombination defects can be reduced greatly because the flow of holes is confined in the center region of the emitter ridge.

  13. High current gain transistor laser

    PubMed Central

    Liang, Song; Qiao, Lijun; Zhu, Hongliang; Wang, Wei

    2016-01-01

    A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors. However, light emission is produced at the expense of current gain for all the TLs reported up to now, leading to a very low current gain. We propose a novel design of TLs, which have an n-doped InP layer inserted in the emitter ridge. Numerical studies show that a current flow aperture for only holes can be formed in the center of the emitter ridge. As a result, the common emitter current gain can be as large as 143.3, which is over 15 times larger than that of a TL without the aperture. Besides, the effects of nonradiative recombination defects can be reduced greatly because the flow of holes is confined in the center region of the emitter ridge. PMID:27282466

  14. High-frequency graphene voltage amplifier.

    PubMed

    Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

    2011-09-14

    While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date. PMID:21805988

  15. A near infrared organic photodiode with gain at low bias voltage

    SciTech Connect

    Campbell, Ian H; Crone, Brian K

    2009-01-01

    We demonstrate an organic photodiode with near infrared optical response out to about 1100 run with a gain of {approx}10 at 1000 run under 5V reverse bias. The diodes employ a soluble naphthalocyanine with a peak absorption coefficient of {approx}10{sup 5} cm{sup -1} at 1000 nm. In contrast to most organic photodiodes, no exciton dissociating material is used. At zero bias, the diodes are inefficient with an external quantum efficiency of {approx} 10{sup -2}. In reverse bias, large gain occurs and is linear with bias voltage above 4V. The observed gain is consistent with a photoconductive gain mechanism.

  16. High voltage load resistor array

    DOEpatents

    Lehmann, Monty Ray

    2005-01-18

    A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

  17. High voltage feed through bushing

    DOEpatents

    Brucker, J.P.

    1993-04-06

    A feed through bushing for a high voltage diode provides for using compression sealing for all sealing surfaces. A diode assembly includes a central conductor extending through the bushing and a grading ring assembly circumferentially surrounding and coaxial with the central conductor. A flexible conductive plate extends between and compressively seals against the central conductor and the grading ring assembly, wherein the flexibility of the plate allows inner and outer portions of the plate to axially translate for compression sealing against the central conductor and the grading ring assembly, respectively. The inner portion of the plate is bolted to the central conductor for affecting sealing. A compression beam is also bolted to the central conductor and engages the outer portion of the plate to urge the outer portion toward the grading ring assembly to obtain compression sealing therebetween.

  18. Low power, scalable multichannel high voltage controller

    DOEpatents

    Stamps, James Frederick; Crocker, Robert Ward; Yee, Daniel Dadwa; Dils, David Wright

    2006-03-14

    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  19. Low power, scalable multichannel high voltage controller

    DOEpatents

    Stamps, James Frederick; Crocker, Robert Ward; Yee, Daniel Dadwa; Dils, David Wright

    2008-03-25

    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  20. Very high gain Nd:YLF amplifiers

    SciTech Connect

    Knights, M.G.; Thomas, M.D.; Chicklis, E.P.; Rines, G.A.; Seka, W.

    1988-05-01

    The authors report on high gain Nd:YLF rod amplifiers in which single-pass, small signal gains of over 1700 have been obtained along with stored energy densitiesgreater than or equal to0.4J/cm/sup 3/. The ability of Nd:YLF amplifiers to support such gains is a result of high parasitic oscillation thresholds, due primarily to the low refractive index of the material. These results suggest that Nd:YLF is an excellent candidate for amplifiers where high specific stored energies and/or very high gains are required.

  1. HIGH VOLTAGE, HIGH CURRENT SPARK GAP SWITCH

    DOEpatents

    Dike, R.S.; Lier, D.W.; Schofield, A.E.; Tuck, J.L.

    1962-04-17

    A high voltage and current spark gap switch comprising two main electrodes insulatingly supported in opposed spaced relationship and a middle electrode supported medially between the main electrodes and symmetrically about the median line of the main electrodes is described. The middle electrode has a perforation aligned with the median line and an irradiation electrode insulatingly supported in the body of the middle electrode normal to the median line and protruding into the perforation. (AEC)

  2. High temperature electronic gain device

    DOEpatents

    McCormick, J. Byron; Depp, Steven W.; Hamilton, Douglas J.; Kerwin, William J.

    1979-01-01

    An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.

  3. Experimental demonstration of an anode voltage sensor for high voltage IGBT over-voltage protection

    NASA Astrophysics Data System (ADS)

    Caramel, C.; Flores, D.; Hidalgo, S.; Legal, J.; Austin, P.; Imbernon, E.; Rebollo, J.; Sánchez, J. L.

    2010-11-01

    This paper deals with the design and fabrication of a monolithically integrated over-voltage sensor together with high voltage IGBTs. This solution will be of interest in harsh environment applications such as power modules for traction. First, the anode voltage sensor concept is introduced and an initial experimental validation on 600 V insulated gate bipolar transistor (IGBT) devices is provided. Then, guidelines for the design of a 3.3 kV IGBT including the proposed anode voltage sensor are pointed out together with its process fabrication. Finally, experimental results on fabricated 3.3 kV IGBTs are presented and compared with simulated expected behaviour.

  4. Electro-Optical High-Voltage Sensors

    NASA Technical Reports Server (NTRS)

    Gottsche, Allan; Johnston, Alan R.

    1992-01-01

    Electro-optical sensors for measuring high voltages developed for use in automatically controlled power-distribution systems. Sensors connected to optoelectronic interrogating equipment by optical fibers. Because sensitive material and optical fibers are all dielectric, no problem in electrically isolating interrogating circuitry from high voltage, and no need for voltage dividers. Sensor signals transmitted along fibers immune to electromagnetic noise at radio and lower frequencies.

  5. High voltage MOSFET switching circuit

    DOEpatents

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  6. High voltage MOSFET switching circuit

    DOEpatents

    McEwan, T.E.

    1994-07-26

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

  7. Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage.

    PubMed

    Feng, Chengang; Yi, Mingdong; Yu, Shunyang; Hümmelgen, Ivo A; Zhang, Tong; Ma, Dongge

    2008-04-01

    We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage. The addition of two Ca layers, leading to a Ca/Ag/Ca base, allowed to obtain a large value of common-emitter current gain, but still retaining the permeable-base transistor character. This kind of vertical devices produced by simple technologies offer attractive new possibilities due to the large variety of available molecular semiconductors, opening the possibility of incorporating new functionalities in silicon-based devices. PMID:18572611

  8. ZVS Full-Bridge Based DC-DC Converter with Linear Voltage Gain According to Duty Cycle

    NASA Astrophysics Data System (ADS)

    Do, Hyun-Lark

    2013-09-01

    This paper presents a zero-voltage-switching (ZVS) full-bridge based DC-DC converter with linear voltage gain according to duty cycle. The proposed converter is based on an asymmetrical pulse-width-modulation (APWM) full-bridge converter which has various advantages over other converters. However, it has some drawbacks such as limited maximum duty cycle to 0.5 and narrow input range. The proposed converter overcomes these problems. The duty cycle is not limited and input voltage range is wide. Also, the ZVS operation of all power switches is achieved. Therefore, switching losses are significantly reduced and high-efficiency is obtained. Steady-state analysis and experimental results for the proposed converter are presented to validate the feasibility and the performance of the proposed converter.

  9. Control of microbial fuel cell voltage using a gain scheduling control strategy

    NASA Astrophysics Data System (ADS)

    Boghani, Hitesh C.; Michie, Iain; Dinsdale, Richard M.; Guwy, Alan J.; Premier, Giuliano C.

    2016-08-01

    Recent microbial fuel cell (MFC) research frequently addresses matters associated with scale and deployability. Modularisation is often needed to reduce ohmic losses with increasing volume. Series/parallel is then often an obvious strategy to enhance power quality during operation, to make best use of generated electricity. Hence, voltage reversal resulting from power and voltage mismatch between cells become virtually unavoidable. Control MFC voltages could be used to stabilise MFC stacks. Here, nonlinear MFCs are controlled using simple gain scheduled Proportional + Integral actions. Parsimonious control may be necessary for implementation in MFC arrays, so minimising costs. Controller parameterisation used several linearised models over the dynamic operating range of the MFCs. Controller gains were then scheduled according to the operating conditions. A digital potentiometer was used to actuate the control, varying the current sourced from the MFC. The results show that the controller was able to control MFC voltages, rejecting the disturbances. It was shown that the controller was transferable between MFCs with different power performances. This study demonstrates that the control of MFCs can be achieved with relatively simple digital approaches, plausibly implementable using low cost microcontrollers, and likely to be useful in the effective deployment of MFCs in large scale arrays.

  10. The Galileo high gain antenna deployment anomaly

    NASA Technical Reports Server (NTRS)

    Johnson, Michael R.

    1994-01-01

    On April 11, 1991, the Galileo spacecraft executed a sequence that would open the spacecraft's High Gain Antenna. The Antenna's launch restraint had been released just after deployment sequence, the antenna, which opens like an umbrella, never reached the fully deployed position. The analyses and tests that followed allowed a conclusive determination of the likely failure mechanisms and pointed to some strategies to use for recovery of the high gain antenna.

  11. APS linac klystron and accelerating structure gain measurements and klystron PFN voltage regulation requirements

    SciTech Connect

    Sereno, N.S.

    1997-07-01

    This note details measurements of the APS positron linac klystron and accelerating structure gain and presents an analysis of the data using fits to simple mathematical models. The models are used to investigate the sensitivity of the energy dependence of the output positron beam to klystron parameters. The gain measurements are separated into two parts: first, the energy gains of the accelerating structures of the positron linac are measured as a function of output power of the klystron; second, the klystron output power is measured as a function of input drive power and pulse forming network (PFN) voltage. This note concentrates on the positron linac rf and its performance as it directly affects the energy stability of the positron beam injected into the positron accumulator ring (PAR). Ultimately it is important to be able to minimize beam energy variations to maximize the PAR accumulation efficiency.

  12. Radiatively heated high voltage pyroelectric crystal pulser

    NASA Astrophysics Data System (ADS)

    Antolak, A. J.; Chen, A. X.; Leung, K.-N.; Morse, D. H.; Raber, T. N.

    2014-01-01

    Thin lithium tantalate pyroelectric crystals in a multi-stage pulser were heated by quartz lamps during their charging phase to generate high voltage pulses. The charging voltage was determined empirically based on the measured breakdown voltage in air and verified by the induced breakdown voltage of an external high voltage power supply. A four-stage pyroelectric crystal device generated pulse discharges of up to 86 kV using both quartz lamps (radiative) and thermoelectric (conductive) heating. Approximately 50 mJ of electrical energy was harvested from the crystals when radiatively heated in air, and up to 720 mJ was produced when the crystals were submerged in a dielectric fluid. It is anticipated that joule-level pulse discharges could be obtained by employing additional stages and optimizing the heating configuration.

  13. Ultrasonic evaluation of high voltage circuit boards

    NASA Technical Reports Server (NTRS)

    Klima, S. J.; Riley, T. J.

    1976-01-01

    Preliminary observations indicate that an ultrasonic scanning technique may be useful as a quick, low cost, nondestructive method for judging the quality of circuit board materials for high voltage applications. Corona inception voltage tests were conducted on fiberglass-epoxy and fiberglass-polyimide high pressure laminates from 20 to 140 C. The same materials were scanned ultrasonically by utilizing the single transducer, through-transmission technique with reflector plate, and recording variations in ultrasonic energy transmitted through the board thickness. A direct relationship was observed between ultrasonic transmission level and corona inception voltage. The ultrasonic technique was subsequently used to aid selection of high quality circuit boards for the Communications Technology Satellite.

  14. High voltage space plasma interactions

    NASA Astrophysics Data System (ADS)

    McCoy, J. E.

    1980-07-01

    Two primary problems resulted from plasma interactions; one of concern to operations in geosynchronous orbit (GEO), the other in low orbits (LEO). The two problems are not the same. Spacecraft charging has become widely recognized as a problem, particularly for communications satellites operating in GEO. The very thin thermal plasmas at GEO are insufficient to bleed off voltage buildups due to higher energy charged particle radiation collected on outer surfaces. Resulting differential charging/discharging causes electrical transients, spurious command signals and possible direct overload damage. An extensive NASA/Air Force program has been underway for several years to address this problem. At lower altitudes, the denser plasmas of the plasmasphere/ionosphere provide sufficient thermal current to limit such charging to a few volts or less. Unfortunately, these thermal plasma currents which solve the GEO spacecraft charging problem can become large enough to cause just the opposite problem in LEO.

  15. Cryogenic High Voltage Insulation Breaks for ITER

    NASA Astrophysics Data System (ADS)

    Kovalchuk, O. A.; Safonov, A. V.; Rodin, I. Yu.; Mednikov, A. A.; Lancetov, A. A.; Klimchenko, Yu. A.; Grinchenko, V. A.; Voronin, N. M.; Smorodina, N. V.; Bursikov, A. S.

    High voltage insulation breaks are used in cryogenic lines with gas or liquid (helium, hydrogen, nitrogen, etc.) at a temperature range of 4.2-300 K and pressure up to 30 MPa to insulate the parts of an electrophysical facility with different electrical potentials. In 2013 JSC "NIIEFA" delivered 95 high voltage insulation breaks to the IO ITER, i.e. 65 breaks with spiral channels and 30 breaks with uniflow channels. These high voltage insulation breaks were designed, manufactured and tested in accordance with the ITER Technical Specifications: «Axial Insulating Breaks for the Qualification Phase of ITER Coils and Feeders». The high voltage insulation breaks consist of the glass-reinforced plastic cylinder equipped with channels for cryoagent and stainless steel end fittings. The operating voltage is 30 kV for the breaks with spiral channels (30 kV HV IBs) and 4 kV for the breaks with uniflow channels (4 kV HV IBs). The main design feature of the 30 kV HV IBs is the spiral channels instead of a linear one. This approach has enabled us to increase the breakdown voltage and decrease the overall dimensions of the high voltage insulation breaks. In 2013 the manufacturing technique was developed to produce the high voltage insulation breaks with the spiral and uniflow channels that made it possible to proceed to serial production. To provide the acceptance tests of the breaks a special test facility was prepared. The helium tightness test at 10-11 m3Pa/s under the pressure up to 10 MPa, the high voltage test up to 135 kV and different types of mechanical tests were carried out at the room and liquid nitrogen temperatures.

  16. Electrical safety for high voltage arrays

    NASA Technical Reports Server (NTRS)

    Marshall, N. A.

    1983-01-01

    A number of key electrical safety requirements for the high voltage arrays of central station photovoltaic power systems are explored. The suitability of representative industrial DC power switchgear for control and fault protection was evaluated. Included were AC/DC circuit breakers, electromechanical contactors and relays, load interruptors, cold disconnect devices, sectionalizing switches, and high voltage DC fuses. As appropriate, steady state and transient characteristics were analyzed. Failure modes impacting upon operation and maintenance safety were also identified, as were the voltage withstand and current interruption levels.

  17. Pulsed high-voltage dc RF sputtering

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J. S., Jr.; Shaltens, R. K.

    1969-01-01

    Sputtering technique uses pulsed high voltage direct current to the object to be plated and a radio frequency sputtered film source. Resultant film has excellent adhesion, and objects can be plated uniformly on all sides.

  18. High Voltage Lines: Hazard at a Distance.

    ERIC Educational Resources Information Center

    Marino, Andrew A.; Becker, Robert O.

    1978-01-01

    It appears that a variety of biological organisms, including man, are sensitive to both long and short-term exposure to the extra low frequency electric and magnetic fields produced by high voltage lines. (BB)

  19. Detecting Faults In High-Voltage Transformers

    NASA Technical Reports Server (NTRS)

    Blow, Raymond K.

    1988-01-01

    Simple fixture quickly shows whether high-voltage transformer has excessive voids in dielectric materials and whether high-voltage lead wires too close to transformer case. Fixture is "go/no-go" indicator; corona appears if transformer contains such faults. Nests in wire mesh supported by cap of clear epoxy. If transformer has defects, blue glow of corona appears in mesh and is seen through cap.

  20. Spacecraft high-voltage power supply construction

    NASA Technical Reports Server (NTRS)

    Sutton, J. F.; Stern, J. E.

    1975-01-01

    The design techniques, circuit components, fabrication techniques, and past experience used in successful high-voltage power supplies for spacecraft flight systems are described. A discussion of the basic physics of electrical discharges in gases is included and a design rationale for the prevention of electrical discharges is provided. Also included are typical examples of proven spacecraft high-voltage power supplies with typical specifications for design, fabrication, and testing.

  1. Boeing's High Voltage Solar Tile Test Results

    NASA Technical Reports Server (NTRS)

    Reed, Brian J.; Harden, David E.; Ferguson, Dale C.; Snyder, David B.

    2002-01-01

    Real concerns of spacecraft charging and experience with solar array augmented electrostatic discharge arcs on spacecraft have minimized the use of high voltages on large solar arrays despite numerous vehicle system mass and efficiency advantages. Boeing's solar tile (patent pending) allows high voltage to be generated at the array without the mass and efficiency losses of electronic conversion. Direct drive electric propulsion and higher power payloads (lower spacecraft weight) will benefit from this design. As future power demand grows, spacecraft designers must use higher voltage to minimize transmission loss and power cable mass for very large area arrays. This paper will describe the design and discuss the successful test of Boeing's 500-Volt Solar Tile in NASA Glenn's Tenney chamber in the Space Plasma Interaction Facility. The work was sponsored by NASA's Space Solar Power Exploratory Research and Technology (SERT) Program and will result in updated high voltage solar array design guidelines being published.

  2. Efficient circuit triggers high-current, high-voltage pulses

    NASA Technical Reports Server (NTRS)

    Green, E. D.

    1964-01-01

    Modified circuit uses diodes to effectively disconnect the charging resistors from the circuit during the discharge cycle. Result is an efficient parallel charging, high voltage pulse modulator with low voltage rating of components.

  3. High voltage planar multijunction solar cell

    NASA Technical Reports Server (NTRS)

    Evans, J. C., Jr.; Chai, A. T.; Goradia, C. P. (Inventor)

    1982-01-01

    A high voltage multijunction solar cell is provided wherein a plurality of discrete voltage generating regions or unit cells are formed in a single generally planar semiconductor body. The unit cells are comprised of doped regions of opposite conductivity type separated by a gap or undiffused region. Metal contacts connect adjacent cells together in series so that the output voltages of the individual cells are additive. In some embodiments, doped field regions separated by a overlie the unit cells but the cells may be formed in both faces of the wafer.

  4. Programmable high voltage power supply with regulation confined to the high voltage section

    NASA Technical Reports Server (NTRS)

    Castell, Karen D. (Inventor); Ruitberg, Arthur P. (Inventor)

    1994-01-01

    A high voltage power supply in a dc-dc converter configuration includes a pre-regulator which filters and regulates the dc input and drives an oscillator which applies, in turn, a low voltage ac signal to the low side of a step-up high voltage transformer. The high voltage side of the transformer drives a voltage multiplier which provides a stepped up dc voltage to an output filter. The output voltage is sensed by a feedback network which then controls a regulator. Both the input and output of the regulator are on the high voltage side, avoiding isolation problems. The regulator furnishes a portion of the drive to the voltage multiplier, avoiding having a regulator in series with the load with its attendant, relatively high power losses. This power supply is highly regulated, has low power consumption, a low parts count and may be manufactured at low cost. The power supply has a programmability feature that allows for the selection of a large range of output voltages.

  5. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous...

  6. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous...

  7. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous...

  8. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous...

  9. Electro-optic high voltage sensor

    DOEpatents

    Davidson, James R.; Seifert, Gary D.

    2003-09-16

    A small sized electro-optic voltage sensor capable of accurate measurement of high voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation. A polarization beam displacer separates the input beam into two beams with orthogonal linear polarizations and causes one linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels effect elliptically polarizes the beam as it travels through the crystal. A reflector redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization. The system may include a detector for converting the output beams into electrical signals and a signal processor for determining the voltage based on an analysis of the output beams.

  10. High-Voltage Isolation Transformer

    NASA Technical Reports Server (NTRS)

    Clatterbuck, C. H.; Ruitberg, A. P.

    1985-01-01

    Arcing and field-included surface erosion reduced by electrostatic shields around windings and ferromagnetic core of 80-kilovolt isolation transformer. Fabricated from high-resistivity polyurethane-based material brushed on critical surfaces, shields maintained at approximately half potential difference of windings.

  11. High voltage testing for the MAJORANA DEMONSTRATOR

    NASA Astrophysics Data System (ADS)

    Abgrall, N.; Arnquist, I. J.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Byram, D.; Caldwell, A. S.; Chan, Y.-D.; Christofferson, C. D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Dunagan, C.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Fu, Z.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Li, A.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Orrell, J. L.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Shanks, B.; Shirchenko, M.; Snyder, N.; Suriano, A. M.; Tedeschi, D.; Thompson, A.; Ton, K. T.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.

    2016-07-01

    The MAJORANA Collaboration is constructing the MAJORANA DEMONSTRATOR, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the MAJORANA DEMONSTRATOR. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the MAJORANA DEMONSTRATOR was characterized and the micro-discharge effects during the MAJORANA DEMONSTRATOR commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.

  12. High voltage testing for the Majorana Demonstrator

    DOE PAGESBeta

    Abgrall, N.; Arnquist, I. J.; Avignone, III, F. T.; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Byram, D.; et al

    2016-04-04

    The Majorana Collaboration is constructing the Majorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the Majorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of themore » high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during the Majorana Demonstrator commissioning phase were studied. Furthermore, a stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.« less

  13. Compact high voltage solid state switch

    DOEpatents

    Glidden, Steven C.

    2003-09-23

    A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

  14. High-voltage electrocution causing bulbar dysfunction

    PubMed Central

    Parvathy, G.; Shaji, C. V.; Kabeer, K. A.; Prasanth, S. R.

    2016-01-01

    Electrical shock can result in neurological complications, involving both peripheral and central nervous systems, which may present immediately or later on. High-voltage electrical injuries are uncommonly reported and may predispose to both immediate and delayed neurologic complications. We report the case of a 68-year-old man who experienced a high-voltage electrocution injury, subsequently developed bulbar dysfunction and spontaneously recovered. We describe the development of bulbar palsy following a significant electrical injury, which showed no evidence of this on magnetic resonance imaging. High-voltage electrocution injuries are a serious problem with potential for both immediate and delayed neurologic sequelae. The existing literature has no reports on bulbar dysfunction following electrocution, apart from motor neuron disease. PMID:27365968

  15. Potted High Voltage Modules For Space Application

    NASA Astrophysics Data System (ADS)

    Herty, Frank

    2011-10-01

    The European Space Mission GOCE, the Mercury mis- sion BepiColombo and the new High Efficiency Multistage Plasma (HEMP) thruster for the SGEO telecom mission have triggered the development of high voltage power supplies at Astrium Satellites covering different classes of output power (20W up to 1.4kW) and voltages (1kV up to 10kV). These supplies are equipped with encapsulated high voltage modules which have been designed as core functional blocks. The potting material - based on epoxy resin - was developed by Astrium Satellites. It is space-qualified for more than 30 years. Many types of high voltage modules have been manufactured since then, starting from transformer modules for the ERS mission to the modules used for electric propulsion. Technical trends, improvements and future goals of this technology are presented and discussed. New and re- fined processes are presented like the encapsulation of high-power toroidal transformers and the void-free electrical shielding by means of thin copper sheets which are laminated onto the surface of the potting material.

  16. High voltage planar multijunction. [Patent application

    SciTech Connect

    Evans, J.C. Jr.; Chai, A.T.; Goradia, C.P.

    1980-12-01

    A solar cell which provides high output voltages, comprises a semiconductor wafer in which a number or array of voltage generating regions or unit cells are formed. Each of the unit cells has two regions of opposite conductivity type (e.g., n+ and p+) which are separated by a gap region. The unit cells are connected together by metal contacts so that their outputs are additive. Field regions, separated by gaps, overlie the unit cells. Cells are formed in both faces of the wafer a circular wafer is employed. NASA

  17. An Inexpensive Source of High Voltage

    ERIC Educational Resources Information Center

    Saraiva, Carlos

    2012-01-01

    As a physics teacher I like recycling old apparatus and using them for demonstrations in my classes. In physics laboratories in schools, sources of high voltage include induction coils or electronic systems that can be bought from companies that sell lab equipment. But these sources can be very expensive. In this article, I will explain how you…

  18. Recommended practices for encapsulating high voltage assemblies

    NASA Technical Reports Server (NTRS)

    Tankisley, E. W.

    1974-01-01

    Preparation and encapsulation of high voltage assemblies are considered. Related problems in encapsulating are brought out in these instructions. A test sampling of four frequently used encapsulating compounds is shown in table form. The purpose of this table is to give a general idea of the working time available and the size of the container required for mixing and de-aerating.

  19. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F.; Yee, Daniel D.

    2010-05-04

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  20. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F.; Yee, Daniel D.

    2008-07-15

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  1. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F.; Yee, Daniel D.

    2007-01-09

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC--DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC--DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  2. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Underground high-voltage cables. 75.804 Section... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in...

  3. High voltage pulse generator. [Patent application

    DOEpatents

    Fasching, G.E.

    1975-06-12

    An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

  4. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall...

  5. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall...

  6. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall...

  7. Hybrid optical antenna with high directivity gain.

    PubMed

    Bonakdar, Alireza; Mohseni, Hooman

    2013-08-01

    Coupling of a far-field optical mode to electronic states of a quantum absorber or emitter is a crucial process in many applications, including infrared sensors, single molecule spectroscopy, and quantum metrology. In particular, achieving high quantum efficiency for a system with a deep subwavelength quantum absorber/emitter has remained desirable. In this Letter, a hybrid optical antenna based on coupling of a photonic nanojet to a metallo-dielectric antenna is proposed, which allows such efficient coupling. A quantum efficiency of about 50% is predicted for a semiconductor with volume of ~λ³/170. Despite the weak optical absorption coefficient of 2000 cm(-1) in the long infrared wavelength of ~8 μm, very strong far-field coupling has been achieved, as evidenced by an axial directivity gain of 16 dB, which is only 3 dB below of theoretical limit. Unlike the common phased array antenna, this structure does not require coherent sources to achieve a high directivity. The quantum efficiency and directivity gain are more than an order of magnitude higher than existing metallic, dielectric, or metallo-dielectric optical antenna. PMID:23903124

  8. Planar multijunction high voltage solar cell chip

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Kapoor, V. J.; Evans, J. C., Jr.

    1982-01-01

    A new innovative planar multijunction solar cell chip for concentrated sunlight applications is proposed. The chip consists of many voltage-generating regions, called unit cells, which are connected in series within a single silicon wafer, thereby providing a high open-circuit voltage at multiple sun illumination levels. The unit cells are fabricated on 75 micron thick p-type single crystal silicon substrate. Each chip consists of 1.42 x 9.63 mm n(+)/p collecting junctions on the back of the wafer, while the illuminated front surface area is divided into 0.3 micron deep n(+) regions. The fabrication sequence includes standard degreasing and cleaning procedures, double-sided alignment photomasking, introduction of boron and phosphorus impurities, and photolithography. The open circuit voltage of the chip increased rapidly with illumination up to about 4 AM1 suns, and then began to saturate at the sum of the individual unit cell voltages of 3.5 above 4 AM1 suns. A short circuit density per unit cell of 300 mA/sq cm at 20 AM1 suns was observed.

  9. Mechanisms of the Rosetta high gain antenna

    NASA Astrophysics Data System (ADS)

    Pereira, Carlos

    2001-09-01

    This paper describes the antenna pointing mechanism (APM) and the hold down and release mechanism (HRM) used in the high gain antenna of the ROSETTA mission. The hold down and release mechanism consists of three units which compensate the tolerance mismatch between antenna and spacecraft through incorporation of potting rings. Given that the activation mode is pyrotechnic, release shock is a major concern and is minimised through integration of shock absorbers which allow stroking of the separation nuts. The antenna pointing mechanism is a dual drive (azimuth over elevation) unit which allows controlled rotation of the antenna. The drive units incorporate spring loaded end stops to prevent the antenna from hitting the spacecraft, and optical encoders which register the absolute position of the antenna. The pointing and the hold down mechanisms of the ROSETTA antenna are fully qualified and will withstand the high launch loads of the Ariane-5 and the environmental demands of deep space operation.

  10. High-voltage portable pulsed power supply fed by low voltage source

    NASA Astrophysics Data System (ADS)

    Rezanejad, Mohammad; Sheikholeslami, Abdolreza; Adabi, Jafar; Valinejad, Mohammadreza

    2016-05-01

    This article proposes a new structure of voltage multiplier for portable pulsed power applications. In this configuration, which is based on capacitor-diode voltage multiplier, the capacitors are charged by low AC input voltage and discharge through the load in series during pulse generation mode. The proposed topology is achieved by integrating of solid-state switches with conventional voltage multiplier, which can increase the low input voltage step by step and generate high-voltage high-frequency pulsed power across the load. After some discussion, simulations and experimental results are provided to verify the effectiveness of the proposed topology.

  11. High Voltage Design Guidelines: A Timely Update

    NASA Technical Reports Server (NTRS)

    Hillard, G. Barry; Kirkici, H.; Ensworth, Clint (Technical Monitor)

    2001-01-01

    The evolving state of high voltage systems and their increasing use in the space program have called for a revision of the High Voltage Design Guidelines, Marshall Space Flight Center technical document MSFC-STD-531, originally issued September 1978 (previously 50 M05189b, October 1972). These guidelines deal in depth with issues relating to the specification of materials, particularly electrical insulation, as well as design practices and test methods. Emphasis is on corona and Paschen breakdown as well as plasma effects for Low Earth Orbiting systems. We will briefly review the history of these guidelines as well as their immediate predecessors and discuss their range of applicability. In addition, this document has served as the basis for several derived works that became focused, program-specific HV guidelines. We will briefly review two examples, guidelines prepared for the X-33 program and for the Space Shuttle Electric Auxiliary Power Unit (EAPU) upgrade.

  12. High voltage system: Plasma interaction summary

    NASA Technical Reports Server (NTRS)

    Stevens, N. John

    1986-01-01

    The possible interactions that could exist between a high voltage system and the space plasma environment are reviewed. A solar array is used as an example of such a system. The emphasis in this review is on the discrepancies that exist in this technology in both flight and ground experiment data. It has been found that, in ground testing, there are facility effects, cell size effects and area scaling uncertainties. For space applications there are area scaling and discharge concerns for an array as well as the influence of the large space structures on the collection process. There are still considerable uncertainties in the high voltage-space plasma interaction technology even after several years of effort.

  13. Electro-optic high voltage sensor

    DOEpatents

    Davidson, James R.; Seifert, Gary D.

    2002-01-01

    A small sized electro-optic voltage sensor capable of accurate measurement of high levels of voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation into the sensor. A polarization beam displacer serves as a filter to separate the input beam into two beams with orthogonal linear polarizations. The beam displacer is oriented in such a way as to rotate the linearly polarized beams such that they enter a Pockels crystal having at a preferred angle of 45 degrees. The beam displacer is therefore capable of causing a linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels electro-optic effect induces a differential phase shift on the major and minor axes of the input beam as it travels through the Pockels crystal, which causes the input beam to be elliptically polarized. A reflecting prism redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization representing the major and minor axes. The system may include a detector for converting the output beams into electrical signals, and a signal processor for determining the voltage based on an analysis of the output beams. The output beams are amplitude modulated by the frequency of the electric field and the amplitude of the output beams is proportional to the magnitude of the electric field, which is related to the voltage being measured.

  14. High voltage spark carbon fiber detection system

    NASA Technical Reports Server (NTRS)

    Yang, L. C.

    1980-01-01

    The pulse discharge technique was used to determine the length and density of carbon fibers released from fiber composite materials during a fire or aircraft accident. Specifications are given for the system which uses the ability of a carbon fiber to initiate spark discharge across a high voltage biased grid to achieve accurate counting and sizing of fibers. The design of the system was optimized, and prototype hardware proved satisfactory in laboratory and field tests.

  15. A high voltage programmable ramp generator

    SciTech Connect

    Upadhyay, J.; Joshi, M. J.; Deshpande, P. P.; Sharma, M. L.; Navathe, C. P.

    2008-05-15

    In this paper, a ramp generator with programmable slope is presented. It consists of a high voltage step generator, followed by integrator. The capacitor and inductor in the integrator are designed such that they can be varied by a microcontroller. This circuit generates two bipolar ramps with fastest speed <1 ns and provides continuous speed variation from 6 to 30 ns for a ramp of 500 V. This is being developed as a part of automated streak camera for deflection of electron beam.

  16. Energy harvesting in high voltage measuring techniques

    NASA Astrophysics Data System (ADS)

    Żyłka, Pawel; Doliński, Marcin

    2016-02-01

    The paper discusses selected problems related to application of energy harvesting (that is, generating electricity from surplus energy present in the environment) to supply autonomous ultra-low-power measurement systems applicable in high voltage engineering. As a practical example of such implementation a laboratory model of a remote temperature sensor is presented, which is self-powered by heat generated in a current-carrying busbar in HV- switchgear. Presented system exploits a thermoelectric harvester based on a passively cooled Peltier module supplying micro-power low-voltage dc-dc converter driving energy-efficient temperature sensor, microcontroller and a fibre-optic transmitter. Performance of the model in laboratory simulated conditions are presented and discussed.

  17. Controllable high voltage source having fast settling time

    NASA Technical Reports Server (NTRS)

    Doong, H.; Acuna, M. H. (Inventor)

    1975-01-01

    A high voltage dc stepping power supply for sampling a utilization device such as an electrostatic analyzer has a relatively fast settling time for voltage steps. The supply includes a waveform generator for deriving a low voltage staircase waveform that feeds a relatively long response time power supply, deriving a high output voltage generally equal to a predetermined multiple of the input voltage. In the power supply, an ac voltage modulated by the staircase waveform is applied to a step-up transformer and then to a voltage multiplier stack to form a high voltage, relatively poor replica of the input waveform at an intermediate output terminal. A constant dc source, applied to the input of the power supply, biases the voltage at the intermediate output terminal to be in excess of the predetermined multiple of the input voltage.

  18. Progress toward high-gain laser fusion

    SciTech Connect

    Storm, E.

    1988-09-28

    A 1985-1986 Review of the US inertial confinement fusion program by the National Academy of Sciences concluded that five more years might be required to obtain enough data to determine the future course of the program. Since then, data from the Nova laser and from the Halite/Centurion program have resolved most of the outstanding problems identified by the NAS review. In particular, we now believe that we can produce a sufficiently uniform target; that we can keep the energy content in hot electrons and high-energy photons low enough (/approximately/1--10% of drive energy, depending on target design) and achieve enough pulse-shaping accuracy (/approximately/10%, with a dynamic range of 100:1) to keep the fuel on a near-Fermi-degenerate adiabat; that we can produce an /approximately/100-Mbar pressure pulse of sufficient uniformity (/approximately/1%), and can we control hydrodynamic instabilities so that the mix of the pusher into the hot spot is low enough to permit marginal ignition. These results are sufficiently encouraging that the US Department of Energy is planning to complete a 10-MJ laboratory microfusion facility to demonstrate high-gain ICF in the laboratory within a decade. 22 refs., 1 fig.

  19. Progress toward high-gain laser fusion

    NASA Astrophysics Data System (ADS)

    Storm, Erik

    1988-09-01

    A 1985 to 1986 Review of the U.S. inertial confinement fusion program by the National Academy of Sciences concluded that five more years might be required to obtain enough data to determine the future course of the program. Since then, data from the Nova laser and from the Halite/Centurion program have resolved most of the outstanding problems identified by the NAS review. In particular, we now believe that we can produce a sufficiently uniform target; that we can keep the energy content in hot electrons and high-energy photons low enough (approximately 1 to 10 percent of drive energy, depending on target design) and achieve enough pulse-shaping accuracy (approximately 10 percent, with a dynamic range of 100:1) to keep the fuel on a near-Fermi-degenerate adiabat; that we can produce an approximately 100-Mbar pressure pulse of sufficient uniformity (approximately 1 percent), and can control hydrodynamic instabilities so that the mix of the pusher into the hot spot is low enough to permit marginal ignition. These results are sufficiently encouraging that DOE is planning to complete a 10-MJ laboratory microfusion facility to demonstrate high-gain ICF in the laboratory within a decade.

  20. High Voltage in Noble Liquids for High Energy Physics

    SciTech Connect

    Rebel, B.; Bernard, E.; Faham, C. H.; Ito, T. M.; Lundberg, B.; Messina, M.; Monrabal, F.; Pereverzev, S. P.; Resnati, F.; Rowson, P. C.; Soderberg, M.; Strauss, T.; Tomas, A.; Va'vra, J.; Wang, H.

    2014-08-22

    A workshop was held at Fermilab November 8-9, 2013 to discuss the challenges of using high voltage in noble liquids. The participants spanned the fields of neutrino, dark matter, and electric dipole moment physics. All presentations at the workshop were made in plenary sessions. This document summarizes the experiences and lessons learned from experiments in these fields at developing high voltage systems in noble liquids.

  1. High gain holmium-doped fibre amplifiers.

    PubMed

    Simakov, Nikita; Li, Zhihong; Jung, Yongmin; Daniel, Jae M O; Barua, Pranabesh; Shardlow, Peter C; Liang, Sijing; Sahu, Jayanta K; Hemming, Alexander; Clarkson, W Andrew; Alam, Shaif-Ul; Richardson, David J

    2016-06-27

    We investigate the operation of holmium-doped fibre amplifiers (HDFAs) in the 2.1 µm spectral region. For the first time we demonstrate a diode-pumped HDFA. This amplifier provides a peak gain of 25 dB at 2040 nm with a 15 dB gain window spanning the wavelength range 2030 - 2100 nm with an external noise figure (NF) of 4-6 dB. We also compare the operation of HDFAs when pumped at 1950 nm and 2008 nm. The 1950 nm pumped HDFA provides 41 dB peak gain at 2060 nm with 15 dB of gain spanning the wavelength range 2050 - 2120 nm and an external NF of 7-10 dB. By pumping at the longer wavelength of 2008 nm the gain bandwidth of the amplifier is shifted to longer wavelengths and using this architecture a HDFA was demonstrated with a peak gain of 39 dB at 2090 nm and 15 dB of gain spanning the wavelength range 2050 - 2150 nm. The external NF over this wavelength range was 8-14 dB. PMID:27410557

  2. A 1 to 18 GHz high gain ultra-broadband amplifier with temperature compensation

    NASA Astrophysics Data System (ADS)

    Ariel, D.; Thibout, T.; Lacombe, J. L.

    1989-05-01

    Design and performance of a high gain ultra-broadband hybrid amplifier with temperature compensation are presented. The amplifier consists of six distributed amplifier stages using GaAs FETs. Design emphasis was on minimizing gain variations with temperature; this was achieved by biasing the gates of the FETs with a temperature varying voltage. The amplifier exhibits a gain of 35 dB with a maximum deviation of + or - 4 dB over the frequency range from 1 to 18 GHz and the temperature range from -55 to +85 C. The gain flatness and temperature stability performance of this amplifier make it useful for EW subsystem applications.

  3. Safe epoxy encapsulant for high voltage magnetics

    SciTech Connect

    Sanchez, R.O.; Archer, W.E.

    1998-01-01

    This paper describes the use of Formula 456, an aliphatic amine cured epoxy for impregnating coils and high voltage transformers. Sandia has evaluated a number of MDA-free epoxy encapsulants which relied on either anhydride or other aromatic amine curing agents. The use of aliphatic amine curing agents was more recently evaluated and has resulted in the definition of Formula 456 resin. Methylene dianiline (MDA) has been used for more than 20 years as the curing agent for various epoxy formulations throughout the Department of Energy and much of industry. Sandia National Laboratories began the process of replacing MDA with other formulations because of regulations imposed by OSHA on the use of MDA. OSHA has regulated MDA because it is a suspect carcinogen. Typically the elimination of OSHA-regulated materials provides a rare opportunity to qualify new formulations in a range of demanding applications. It was important to take full advantage of that opportunity, although the associated materials qualification effort was costly. Small high voltage transformers are one of those demanding applications. The successful implementation of the new formulation for high reliability transformers will be described. The test results that demonstrate the parts are qualified for use in DOE weapon systems will be presented.

  4. High voltage compliance constant current ballast

    NASA Technical Reports Server (NTRS)

    Rosenthal, L. A.

    1976-01-01

    A ballast circuit employing a constant current diode and a vacuum tube that can provide a constant current over a voltage range of 1000 volts. The simple circuit can prove useful in studying voltage breakdown characteristics.

  5. Accelerator System Development at High Voltage Engineering

    SciTech Connect

    Klein, M. G.; Gottdang, A.; Haitsma, R. G.; Mous, D. J. W.

    2009-03-10

    Throughout the years, HVE has continuously extended the capabilities of its accelerator systems to meet the rising demands from a diverse field of applications, among which are deep level ion implantation, micro-machining, neutron production for biomedical research, isotope production or accelerator mass spectrometry. Characteristic for HVE accelerators is the coaxial construction of the all solid state power supply around the acceleration tubes. With the use of solid state technology, the accelerators feature high stability and very low ripple. Terminal voltages range from 1 to 6 MV for HVE Singletrons and Tandetrons. The high-current versions of these accelerators can provide ion beams with powers of several kW. In the last years, several systems have been built with terminal voltages of 1.25 MV, 2 MV and 5 MV. Recently, the first system based on a 6 MV Tandetron has passed the factory tests. In this paper we describe the characteristics of the HVE accelerator systems and present as example recent systems.

  6. High-Gain High-Field Fusion Plasma

    NASA Astrophysics Data System (ADS)

    Li, Ge

    2015-10-01

    A Faraday wheel (FW)—an electric generator of constant electrical polarity that produces huge currents—could be implemented in an existing tokamak to study high-gain high-field (HGHF) fusion plasma, such as the Experimental Advanced Superconducting Tokamak (EAST). HGHF plasma can be realized in EAST by updating its pulsed-power system to compress plasma in two steps by induction fields; high gains of the Lawson trinity parameter and fusion power are both predicted by formulating the HGHF plasma. Both gain rates are faster than the decrease rate of the plasma volume. The formulation is checked by earlier ATC tests. Good agreement between theory and tests indicates that scaling to over 10 T at EAST may be possible by two-step compressions with a compression ratio of the minor radius of up to 3. These results point to a quick new path of fusion plasma study, i.e., simulating the Sun by EAST.

  7. High-Gain High-Field Fusion Plasma.

    PubMed

    Li, Ge

    2015-01-01

    A Faraday wheel (FW)-an electric generator of constant electrical polarity that produces huge currents-could be implemented in an existing tokamak to study high-gain high-field (HGHF) fusion plasma, such as the Experimental Advanced Superconducting Tokamak (EAST). HGHF plasma can be realized in EAST by updating its pulsed-power system to compress plasma in two steps by induction fields; high gains of the Lawson trinity parameter and fusion power are both predicted by formulating the HGHF plasma. Both gain rates are faster than the decrease rate of the plasma volume. The formulation is checked by earlier ATC tests. Good agreement between theory and tests indicates that scaling to over 10 T at EAST may be possible by two-step compressions with a compression ratio of the minor radius of up to 3. These results point to a quick new path of fusion plasma study, i.e., simulating the Sun by EAST. PMID:26507314

  8. Design of a high linearity and high gain accuracy analog baseband circuit for DAB receiver

    NASA Astrophysics Data System (ADS)

    Li, Ma; Zhigong, Wang; Jian, Xu; Yiqiang, Wu; Junliang, Wang; Mi, Tian; Jianping, Chen

    2015-02-01

    An analog baseband circuit of high linearity and high gain accuracy for a digital audio broadcasting receiver is implemented in a 0.18-μm RFCMOS process. The circuit comprises a 3rd-order active-RC complex filter (CF) and a programmable gain amplifier (PGA). An automatic tuning circuit is also designed to tune the CF's pass band. Instead of the class-A fully differential operational amplifier (FDOPA) adopted in the conventional CF and PGA design, a class-AB FDOPA is specially employed in this circuit to achieve a higher linearity and gain accuracy for its large current swing capability with lower static current consumption. In the PGA circuit, a novel DC offset cancellation technique based on the MOS resistor is introduced to reduce the settling time significantly. A reformative switching network is proposed, which can eliminate the switch resistor's influence on the gain accuracy of the PGA. The measurement result shows the gain range of the circuit is 10-50 dB with a 1-dB step size, and the gain accuracy is less than ±0.3 dB. The OIP3 is 23.3 dBm at the gain of 10 dB. Simulation results show that the settling time is reduced from 100 to 1 ms. The image band rejection is about 40 dB. It only draws 4.5 mA current from a 1.8 V supply voltage.

  9. 30 CFR 77.810 - High-voltage equipment; grounding.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage equipment; grounding. 77.810 Section 77.810 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE... COAL MINES Surface High-Voltage Distribution § 77.810 High-voltage equipment; grounding....

  10. 30 CFR 77.810 - High-voltage equipment; grounding.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage equipment; grounding. 77.810 Section 77.810 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE... COAL MINES Surface High-Voltage Distribution § 77.810 High-voltage equipment; grounding....

  11. High gain Raman amplifier with inherent gain flattening and dispersion compensation

    NASA Astrophysics Data System (ADS)

    Kakkar, Charu; Thyagarajan, K.

    2005-06-01

    We report here an inherently gain-flattened, high-gain discrete Raman fiber amplifier design with 21 dB net gain (±1.4 dB gain ripple) over 25 nm bandwidth. The amplifier design is based on a W-shape highly nonlinear fiber, in which, optimized spectral variation of leakage loss has been used to achieve inherent gain flattening of Raman gain. The proposed fiber has an additional advantage of having a high negative dispersion coefficient (∼-84 ps/km nm) over the operating range of wavelength and thus the designed discrete amplifier module, based on this fiber, is also capable of compensating dispersion accumulated in one span (70 km) of transmission through G.652 fiber. Hence, the designed module is proposed as a composite amplifier and dispersion-compensating unit for 25 nm bandwidth, which is capable of handling both attenuation and dispersion of one span of G. 652 transmission.

  12. Complete low power controller for high voltage power systems

    SciTech Connect

    Sumner, R.; Blanar, G.

    1997-12-31

    The MHV100 is a custom CMOS integrated circuit, developed for the AMS experiment. It provides complete control for a single channel high voltage (HV) generator and integrates all the required digital communications, D to A and A to D converters, the analog feedback loop and output drivers. This chip has been designed for use in both distributed high voltage systems or for low cost single channel high voltage systems. The output voltage and current range is determined by the external components.

  13. High Voltage Power Transmission for Wind Energy

    NASA Astrophysics Data System (ADS)

    Kim, Young il

    The high wind speeds and wide available area at sea have recently increased the interests on offshore wind farms in the U.S.A. As offshore wind farms become larger and are placed further from the shore, the power transmission to the onshore grid becomes a key feature. Power transmission of the offshore wind farm, in which good wind conditions and a larger installation area than an onshore site are available, requires the use of submarine cable systems. Therefore, an underground power cable system requires unique design and installation challenges not found in the overhead power cable environment. This paper presents analysis about the benefit and drawbacks of three different transmission solutions: HVAC, LCC/VSC HVDC in the grid connecting offshore wind farms and also analyzed the electrical characteristics of underground cables. In particular, loss of HV (High Voltage) subsea power of the transmission cables was evaluated by the Brakelmann's theory, taking into account the distributions of current and temperature.

  14. High voltage with Si series photovoltaics.

    SciTech Connect

    Hsia, Alex; Bennett, Reid Stuart; Patel, Rupal K.; Nasby, Robert D.; Stein, David J.

    2006-02-01

    A monolithic crystalline Si photovoltaic device, developing a potential of 2,120 Volts, has been demonstrated. The monolithic device consists of 3600 small photovoltaic cells connected in series and fabricated using standard CMOS processing on SOI wafers. The SOI wafers with trenches etched to the buried oxide (BOX) depth are used for cell isolation. The photovoltaic cell is a Si pn junction device with the n surface region forming the front surface diffused region upon which light impinges. Contact is formed to the deeper diffused region at the cell edge. The p+ deep-diffused region forms the contact to the p-type base region. Base regions were 5 or 10 {micro}m thick. Series connection of individual cells is accomplished using standard CMOS interconnects. This allows for the voltage to range from approximately 0.5 Volts for a single cell to above a thousand volts for strings of thousands of cells. The current is determined by cell area. The voltage is limited by dielectric breakdown. Each cell is isolated from the adjacent cells through dielectric-filled trench isolation, the substrate through the SOI buried oxide, and the metal wiring by the deposited pre-metal dielectric. If any of these dielectrics fail (whether due to high electric fields or inherent defects), the photovoltaic device will not produce the desired potential. We have used ultra-thick buried oxide SOI and several novel processes, including an oxynitride trench fill process, to avoid dielectric breakdown.

  15. High Voltage GaN Schottky Rectifiers

    SciTech Connect

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  16. High gain feedback and telerobotic tracking

    NASA Technical Reports Server (NTRS)

    Koditschek, D. E.

    1987-01-01

    Asymptotically stable linear time invariant systems are capable of tracking arbitrary reference signals with a bounded error proportional to the magnitude of the reference signal (and its derivatives). It is shown that a similar property holds for a general class of nonlinear dynamical systems which includes all robots. As in the linear case, the error bound may be made arbitrarily small by increasing the magnitude of the feedback gains which stabilize the system.

  17. High voltage supply for neutron tubes in well logging applications

    DOEpatents

    Humphreys, D. Russell

    1989-01-01

    A high voltage supply is provided for a neutron tube used in well logging. The "biased pulse" supply of the invention combines DC and "full pulse" techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

  18. Conceptual definition of a high voltage power supply test facility

    NASA Technical Reports Server (NTRS)

    Biess, John J.; Chu, Teh-Ming; Stevens, N. John

    1989-01-01

    NASA Lewis Research Center is presently developing a 60 GHz traveling wave tube for satellite cross-link communications. The operating voltage for this new tube is - 20 kV. There is concern about the high voltage insulation system and NASA is planning a space station high voltage experiment that will demonstrate both the 60 GHz communications and high voltage electronics technology. The experiment interfaces, requirements, conceptual design, technology issues and safety issues are determined. A block diagram of the high voltage power supply test facility was generated. It includes the high voltage power supply, the 60 GHz traveling wave tube, the communications package, the antenna package, a high voltage diagnostics package and a command and data processor system. The interfaces with the space station and the attached payload accommodations equipment were determined. A brief description of the different subsystems and a discussion of the technology development needs are presented.

  19. A new very high voltage semiconductor switch

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1985-01-01

    A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

  20. Neutron-induced single event burnout in high voltage electronics

    SciTech Connect

    Normand, E.; Wert, J.L.; Oberg, D.L.; Majewski, P.P.; Voss, P.; Wender, S.A.

    1997-12-01

    Energetic neutrons with an atmospheric neutron spectrum, which were demonstrated to induce single event burnout in power MOSFETs, have been shown to induce burnout in high voltage (>3,000V) electronics when operated at voltages as low as 50% of rated voltage. The laboratory failure rates correlate well with field failure rates measured in Europe.

  1. On the ignition of high gain thermonuclear microexplosions with electric pulse power

    NASA Astrophysics Data System (ADS)

    Winterberg, F.

    2004-02-01

    It was recently shown that the ignition of thermonuclear microexplosions seems possible with two Marx generators of modest size, one with a high current lower voltage for compression and confinement, and one with a high voltage lower current for ignition, transmitting their energy to the thermonuclear target by two nested magnetically insulated transmission lines. Here it is shown in much greater detail how this concept has the potential for the ignition of high gain thermonuclear microexplosions with a yield sufficiently low for a thermonuclear reactor and rocket propulsion. The concept also offers the possibility for the concurrent burn of deuterium-tritium with natural uranium or thorium.

  2. High-Gain High-Field Fusion Plasma

    PubMed Central

    Li, Ge

    2015-01-01

    A Faraday wheel (FW)—an electric generator of constant electrical polarity that produces huge currents—could be implemented in an existing tokamak to study high-gain high-field (HGHF) fusion plasma, such as the Experimental Advanced Superconducting Tokamak (EAST). HGHF plasma can be realized in EAST by updating its pulsed-power system to compress plasma in two steps by induction fields; high gains of the Lawson trinity parameter and fusion power are both predicted by formulating the HGHF plasma. Both gain rates are faster than the decrease rate of the plasma volume. The formulation is checked by earlier ATC tests. Good agreement between theory and tests indicates that scaling to over 10 T at EAST may be possible by two-step compressions with a compression ratio of the minor radius of up to 3. These results point to a quick new path of fusion plasma study, i.e., simulating the Sun by EAST. PMID:26507314

  3. Low-noise pseudomorphic dual-gate cascode HEMT's with extremely high gain

    NASA Astrophysics Data System (ADS)

    Wenger, J.; Narozny, P.; Daembkes, H.; Splettstoesser, J.; Werres, C.

    1992-02-01

    Quarter-micron InGaAs-GaAs dual-gate HEMTs connected as a cascode MMIC in a compact manner have been fabricated and investigated. The devices show a high output impedance and a very low feedback capacitance, resulting in a high-voltage gain factor gm/gd of 125 and a Cgs/Cgd ratio of 45. The current gain cutoff frequency fT is 45 GHz and the maximum stable gain is 23.5 dB at 10 GHz and 19 dB at 20 GHz. The pseudomorphic cascode HEMTs show a low-noise figure of 1.1 dB with an associated gain of 22 dB at 10 GHz, at 18 GHz the minimum noise figure is 1.9 dB with 16-dB gain.

  4. Resonator modes in high gain free electron lasers

    SciTech Connect

    Xie, Ming ); Deacon, D.A.G. ); Madey, J.M.J. . Dept. of Physics)

    1989-10-01

    When the gain in a free electron laser is high enough to produce optical guiding, the resonator mode distorts and loses its forward-backward symmetry. We show that the resonator mode in a high gain FEL can be easily constructed using the mode expansion technique taken separately in the interaction and the free-space regions. We propose design strategies to achieve maximal gain and optimal mode quality, and discuss the stability of the optimized mode. 11 refs., 4 figs.

  5. Solid electrolyte: The key for high-voltage lithium batteries

    SciTech Connect

    Li, Juchuan; Ma, Cheng; Chi, Miaofang; Liang, Chengdu; Dudney, Nancy J.

    2014-10-14

    A solid-state high-voltage (5 V) lithium battery is demonstrated to deliver a cycle life of 10 000 with 90% capacity retention. Furthermore, the solid electrolyte enables the use of high-voltage cathodes and Li anodes with minimum side reactions, leading to a high Coulombic efficiency of 99.98+%.

  6. Electromagnetic compatibility in high-voltage engineering

    NASA Astrophysics Data System (ADS)

    Vanhouten, Marinus Albertus

    1990-09-01

    Electro Magnetic Compatibility (EMC) concepts for an efficient and consistant approach to practical interference problems are described. A critical analysis of 'grounding' is given. The design of a 'differentiated/integrated' system to measure fast voltage transients is described. Measurements of steep transient voltages across interruptions in a Gas Insulated Switchear (GIS) installation, due to switching actions, are presented. Available means to reduce the influence of this interference source on the measuring are discussed. General conclusions are that general, linear and basic design methods for the protection of electronics and (large) interconnected electrical systems against interference can be developed which can save production costs and research time. The design methods described concentrate on the reduction of dangerous voltages between critical points which can be achieved by correct layout choice.

  7. Bus-controlled power driver circuits for high voltages, using linear compatible I2L logic

    NASA Astrophysics Data System (ADS)

    Clauss, H.; Kuebler, M.

    1986-04-01

    A technology for monolithic integration of bipolar transistors, having breakdown voltages greater than or = to 60 V, and I2L-logic was developed. Bipolar transistors with high breakdown voltages must have thick, low doped epitaxial layers and low dc current gain, but I2L-logic with high packing density and short gate delay demands thin epitaxial layers and high dc current gain. A process with two epitaxial layers with buried layer and different intrinsic base doping for the two types of npn-transistor was developed. Bus-controlled power driver circuits for inductive loads in industrial systems were realized. Devices have 60 V maximum supply voltage and, electronically limited, 260 mA max output current.

  8. High gain durable anti-reflective coating

    DOEpatents

    Maghsoodi, Sina; Brophy, Brenor L.; Colson, Thomas E.; Gonsalves, Peter R.; Abrams, Ze'ev R.

    2016-07-26

    Disclosed herein are polysilsesquioxane-based anti-reflective coating (ARC) compositions, methods of preparation, and methods of deposition on a substrate. In one embodiment, the polysilsesquioxane of this disclosure is prepared in a two-step process of acid catalyzed hydrolysis of organoalkoxysilane followed by addition of tetralkoxysilane that generates silicone polymers with >40 mol % silanol based on Si-NMR. These high silanol siloxane polymers are stable and have a long shelf-life in polar organic solvents at room temperature. Also disclosed are low refractive index ARC made from these compositions with and without additives such as porogens, templates, thermal radical initiator, photo radical initiators, crosslinkers, Si--OH condensation catalyst and nano-fillers. Also disclosed are methods and apparatus for applying coatings to flat substrates including substrate pre-treatment processes, coating processes and coating curing processes including skin-curing using hot-air knives. Also disclosed are coating compositions and formulations for highly tunable, durable, highly abrasion-resistant functionalized anti-reflective coatings.

  9. Surface voltage gradient role in high voltage solar array-plasma interaction: Center Director's discretionary fund

    NASA Technical Reports Server (NTRS)

    Carruth, M. R., Jr.

    1985-01-01

    A large amount of experimental and analytical effort has been directed toward understanding the plasma sheath growth and discharge phenomena which lead to high voltage solar array-space plasma interactions. An important question which has not been addressed is how the surface voltage gradient on such an array may affect these interactions. The results of this study indicate that under certain conditions, the voltage gradient should be taken into account when evaluating the effect on a solar array operating in a plasma environment.

  10. High voltage switches having one or more floating conductor layers

    SciTech Connect

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  11. Stacking nonenzymatic circuits for high signal gain

    PubMed Central

    Chen, Xi; Briggs, Neima; McLain, Jeremy R.; Ellington, Andrew D.

    2013-01-01

    Signal amplification schemes that do not rely on protein enzymes show great potential in areas as abstruse as DNA computation and as applied as point-of-care molecular diagnostics. Toehold-mediated strand displacement, a programmable form of dynamic DNA hybridization, can be used to design powerful amplification cascades that can achieve polynomial or exponential amplification of input signals. However, experimental implementation of such amplification cascades has been severely hindered by circuit leakage due to catalyst-independent side reactions. In this study, we systematically analyzed the origins, characteristics, and outcomes of circuit leakage in amplification cascades and devised unique methods to obtain high-quality DNA circuits that exhibit minimal leakage. We successfully implemented a two-layer cascade that yielded 7,000-fold signal amplification and a two-stage, four-layer cascade that yielded upward of 600,000-fold signal amplification. Implementation of these unique methods and design principles should greatly empower molecular programming in general and DNA-based molecular diagnostics in particular. PMID:23509255

  12. Electrical system architecture having high voltage bus

    DOEpatents

    Hoff, Brian Douglas; Akasam, Sivaprasad

    2011-03-22

    An electrical system architecture is disclosed. The architecture has a power source configured to generate a first power, and a first bus configured to receive the first power from the power source. The architecture also has a converter configured to receive the first power from the first bus and convert the first power to a second power, wherein a voltage of the second power is greater than a voltage of the first power, and a second bus configured to receive the second power from the converter. The architecture further has a power storage device configured to receive the second power from the second bus and deliver the second power to the second bus, a propulsion motor configured to receive the second power from the second bus, and an accessory motor configured to receive the second power from the second bus.

  13. Optimizing planar lipid bilayer single-channel recordings for high resolution with rapid voltage steps.

    PubMed Central

    Wonderlin, W F; Finkel, A; French, R J

    1990-01-01

    We describe two enhancements of the planar bilayer recording method which enable low-noise recordings of single-channel currents activated by voltage steps in planar bilayers formed on apertures in partitions separating two open chambers. First, we have refined a simple and effective procedure for making small bilayer apertures (25-80 micrograms diam) in plastic cups. These apertures combine the favorable properties of very thin edges, good mechanical strength, and low stray capacitance. In addition to enabling formation of small, low-capacitance bilayers, this aperture design also minimizes the access resistance to the bilayer, thereby improving the low-noise performance. Second, we have used a patch-clamp headstage modified to provide logic-controlled switching between a high-gain (50 G omega) feedback resistor for high-resolution recording and a low-gain (50 M omega) feedback resistor for rapid charging of the bilayer capacitance. The gain is switched from high to low before a voltage step and then back to high gain 25 microseconds after the step. With digital subtraction of the residual currents produced by the gain switching and electrostrictive changes in bilayer capacitance, we can achieve a steady current baseline within 1 ms after the voltage step. These enhancements broaden the range of experimental applications for the planar bilayer method by combining the high resolution previously attained only with small bilayers formed on pipette tips with the flexibility of experimental design possible with planar bilayers in open chambers. We illustrate application of these methods with recordings of the voltage-step activation of a voltage-gated potassium channel. PMID:1698470

  14. A compact high voltage pulse generator

    SciTech Connect

    Rohwein, G.J.; Babcock, S.R.

    1994-07-01

    A compact, easily transportable, pulse generator has been developed for a variety of applications that require a pulse duration in the range of 1 {mu} sec., voltages from 150 to 300 KV and current levels from 2,000 to 3,000 amps. The generator has a simple cylindrical configuration and modular construction to facilitate assembly and service. The generator may be operated single-pulse or repetitively at pulse repetition rates to 50 Hz in a burst mode.

  15. Living and Working Safely Around High-Voltage Power Lines.

    SciTech Connect

    United States. Bonneville Power Administration.

    2001-06-01

    High-voltage transmission lines can be just as safe as the electrical wiring in the homes--or just as dangerous. The crucial factor is ourselves: they must learn to behave safely around them. This booklet is a basic safety guide for those who live and work around power lines. It deals primarily with nuisance shocks due to induced voltages, and with potential electric shock hazards from contact with high-voltage lines. References on possible long-term biological effects of transmission lines are shown. In preparing this booklet, the Bonneville Power Administration has drawn on more than 50 years of experience with high-voltage transmission. BPA operates one of the world`s largest networks of long-distance, high-voltage lines. This system has more than 400 substations and about 15,000 miles of transmission lines, almost 4,400 miles of which are operated at 500,000 volts.

  16. Bipolar high-repetition-rate high-voltage nanosecond pulser

    SciTech Connect

    Tian Fuqiang; Wang Yi; Shi Hongsheng; Lei Qingquan

    2008-06-15

    The pulser designed is mainly used for producing corona plasma in waste water treatment system. Also its application in study of dielectric electrical properties will be discussed. The pulser consists of a variable dc power source for high-voltage supply, two graded capacitors for energy storage, and the rotating spark gap switch. The key part is the multielectrode rotating spark gap switch (MER-SGS), which can ensure wider range modulation of pulse repetition rate, longer pulse width, shorter pulse rise time, remarkable electrical field distortion, and greatly favors recovery of the gap insulation strength, insulation design, the life of the switch, etc. The voltage of the output pulses switched by the MER-SGS is in the order of 3-50 kV with pulse rise time of less than 10 ns and pulse repetition rate of 1-3 kHz. An energy of 1.25-125 J per pulse and an average power of up to 10-50 kW are attainable. The highest pulse repetition rate is determined by the driver motor revolution and the electrode number of MER-SGS. Even higher voltage and energy can be switched by adjusting the gas pressure or employing N{sub 2} as the insulation gas or enlarging the size of MER-SGS to guarantee enough insulation level.

  17. Planar LTCC transformers for high voltage flyback converters.

    SciTech Connect

    Schofield, Daryl; Schare, Joshua M.; Glass, Sarah Jill; Roesler, Alexander William; Ewsuk, Kevin Gregory; Slama, George; Abel, Dave

    2007-06-01

    This paper discusses the design and use of low-temperature (850 C to 950 C) co-fired ceramic (LTCC) planar magnetic flyback transformers for applications that require conversion of a low voltage to high voltage (> 100V) with significant volumetric constraints. Measured performance and modeling results for multiple designs showed that the LTCC flyback transformer design and construction imposes serious limitations on the achievable coupling and significantly impacts the transformer performance and output voltage. This paper discusses the impact of various design factors that can provide improved performance by increasing transformer coupling and output voltage. The experiments performed on prototype units demonstrated LTCC transformer designs capable of greater than 2 kV output. Finally, the work investigated the effect of the LTCC microstructure on transformer insulation. Although this paper focuses on generating voltages in the kV range, the experimental characterization and discussion presented in this work applies to designs requiring lower voltage.

  18. An output amplitude configurable wideband automatic gain control with high gain step accuracy

    NASA Astrophysics Data System (ADS)

    Xiaofeng, He; Taishan, Mo; Chengyan, Ma; Tianchun, Ye

    2012-02-01

    An output amplitude configurable wideband automatic gain control (AGC) with high gain step accuracy for the GNSS receiver is presented. The amplitude of an AGC is configurable in order to cooperate with baseband chips to achieve interference suppression and be compatible with different full range ADCs. And what's more, the gain-boosting technology is introduced and the circuit is improved to increase the step accuracy. A zero, which is composed by the source feedback resistance and the source capacity, is introduced to compensate for the pole. The AGC is fabricated in a 0.18 μm CMOS process. The AGC shows a 62 dB gain control range by 1 dB each step with a gain error of less than 0.2 dB. The AGC provides 3 dB bandwidth larger than 80 MHz and the overall power consumption is less than 1.8 mA, and the die area is 800 × 300 μm2.

  19. Optically triggered high voltage switch network and method for switching a high voltage

    DOEpatents

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  20. E-beam high voltage switching power supply

    DOEpatents

    Shimer, Daniel W.; Lange, Arnold C.

    1996-01-01

    A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  1. E-beam high voltage switching power supply

    DOEpatents

    Shimer, D.W.; Lange, A.C.

    1996-10-15

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

  2. COTS Li-Ion Cells in High Voltage Batteries

    NASA Technical Reports Server (NTRS)

    Davies, Francis; Darcy, Eric; Jeevarajan, Judy; Cowles, Phil

    2003-01-01

    Testing at NASA JSC and COMDEV shows that Commercial Off the Shelf (COTS) Li Ion cells can not be used in high voltage batteries safely without considering the voltage stresses that may be put on the protective devices in them during failure modes.

  3. High voltage high repetition rate pulse using Marx topology

    NASA Astrophysics Data System (ADS)

    Hakki, A.; Kashapov, N.

    2015-06-01

    The paper describes Marx topology using MOSFET transistors. Marx circuit with 10 stages has been done, to obtain pulses about 5.5KV amplitude, and the width of the pulses was about 30μsec with a high repetition rate (PPS > 100), Vdc = 535VDC is the input voltage for supplying the Marx circuit. Two Ferrite ring core transformers were used to control the MOSFET transistors of the Marx circuit (the first transformer to control the charging MOSFET transistors, the second transformer to control the discharging MOSFET transistors).

  4. High-voltage pulsed generators for electro-discharge technologies

    NASA Astrophysics Data System (ADS)

    Kovalchuk, B. M.; Kharlov, A. V.; Kumpyak, E. V.; Sinebrykhov, V. A.

    2013-09-01

    A high-voltage pulse technology is one of effective techniques for the disintegration and milling of rocks, separation of ores and synthesized materials, recycling of building and elastoplastic materials. We present here the design and test results of two portable HV pulsed generators, designed for materials fragmentation, though some other technological applications are possible as well. Generator #1 consists of low voltage block, high voltage transformer, high voltage capacitive storage block, two electrode gas switch, fragmentation chamber and control system block. Technical characteristics of the #1 generator: stored energy in HV capacitors can be varied from 50 to 1000 J, output voltage up to 300 kV, voltage rise time ~ 50 ns, typical operation regime 1000 pulses bursts with a repetitive rate up to 10 Hz. Generator #2 is made on an eight stages Marx scheme with two capacitors (100 kV-400 nF) per stage, connected in parallel. Two electrode spark gap switches, operated in atmospheric air, are used in the Marx generator. Parameters of the generator: stored energy in capacitors 2÷8 kJ, amplitude of the output voltage 200÷400 kV, voltage rise time on a load 50÷100 ns, repetitive rate up to 0.5 Hz. The fragmentation process can be controlled within a wide range of parameters for both generators.

  5. Computer simulation of space station computer steered high gain antenna

    NASA Technical Reports Server (NTRS)

    Beach, S. W.

    1973-01-01

    The mathematical modeling and programming of a complete simulation program for a space station computer-steered high gain antenna are described. The program provides for reading input data cards, numerically integrating up to 50 first order differential equations, and monitoring up to 48 variables on printed output and on plots. The program system consists of a high gain antenna, an antenna gimbal control system, an on board computer, and the environment in which all are to operate.

  6. High-Current Gain Two-Dimensional MoS₂-Base Hot-Electron Transistors.

    PubMed

    Torres, Carlos M; Lan, Yann-Wen; Zeng, Caifu; Chen, Jyun-Hong; Kou, Xufeng; Navabi, Aryan; Tang, Jianshi; Montazeri, Mohammad; Adleman, James R; Lerner, Mitchell B; Zhong, Yuan-Liang; Li, Lain-Jong; Chen, Chii-Dong; Wang, Kang L

    2015-12-01

    The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. PMID:26524388

  7. System for instrumenting and manipulating apparatuses in high voltage

    DOEpatents

    Jordan, Kevin

    2016-06-07

    A system for energizing, operating and manipulating apparatuses in high voltage systems. The system uses a dielectric gas such as SF.sub.6 as a driving power supply for a pneumatic motor which ultimately charges a battery or other energy storage device. The stored energy can then be used for instrumentation equipment, or to power any electrical equipment, in the high voltage deck. The accompanying method provides for the use of the SF6 system for operating an electrical device in a high-voltage environment.

  8. High voltage bushing having weathershed and surrounding stress relief collar

    DOEpatents

    Cookson, Alan H.

    1981-01-01

    A high voltage electric bushing comprises a hollow elongated dielectric weathershed which encloses a high voltage conductor. A collar formed of high voltage dielectric material is positioned over the weathershed and is bonded thereto by an interface material which precludes moisture-like contaminants from entering between the bonded portions. The collar is substantially thicker than the adjacent weathershed which it surrounds, providing relief of the electric stresses which would otherwise appear on the outer surface of the weathershed. The collar may include a conductive ring or capacitive foil to further relieve electric stresses experienced by the bushing.

  9. High-gain, high-bandwidth, rail-to-rail, constant-gm CMOS operational amplifier

    NASA Astrophysics Data System (ADS)

    Huang, Hong-Yi; Wang, Bo-Ruei

    2013-01-01

    This study presents a high-gain, high-bandwidth, constant-gm , rail-to-rail operational amplifier (op-amp). The constant transconductance is improved with a source-to-bulk bias control of an input pair. A source degeneration scheme is also adapted to the output stage for receiving wide input range without degradation of the gain. Additionally, several compensation schemes are employed to enhance the stability. A test chip is fabricated in a 0.18 µm complementary metal-oxide semiconductor process. The active area of the op-amp is 181 × 173 µm2 and it consumes a power of 2.41 mW at a supply voltage of 1.8 V. The op-amp achieves a dc gain of 94.3 dB and a bandwidth of 45 MHz when the output capacitive load is connected to an effective load of 42.5 pF. A class-AB output stage combining a slew rate (SR) boost circuit provides a sinking current of 6 mA and an SR of 17 V/µs.

  10. High voltage, low inductance hydrogen thyratron study program, phase 5

    NASA Astrophysics Data System (ADS)

    Friedman, S.

    1983-08-01

    50 kv per stage dynamic breakdown voltage (DBV) was demonstrated in low inductance multistage hydrogen thyratrons for total voltages up to nearly 200 kv, at pressures consistent with a 10 ns current rise time. High peak current operation has been demonstrated up to 14 ka at 56 kv (the limits of our high current test kit). Bottom stage holdoff the per stage DBV are comparable to that of the best single stage thyratrons, bottom stage holdoff, stage voltage addition, and prefire problems are solved.

  11. Fast recovery, high voltage silicon diodes for AC motor controllers

    NASA Technical Reports Server (NTRS)

    Balodis, V.; Berman, A. H.; Gaugh, C.

    1982-01-01

    The fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.

  12. Multiple high voltage output DC-to-DC power converter

    NASA Technical Reports Server (NTRS)

    Cronin, Donald L. (Inventor); Farber, Bertrand F. (Inventor); Gehm, Hartmut K. (Inventor); Goldin, Daniel S. (Inventor)

    1977-01-01

    Disclosed is a multiple output DC-to-DC converter. The DC input power is filtered and passed through a chopper preregulator. The chopper output is then passed through a current source inverter controlled by a squarewave generator. The resultant AC is passed through the primary winding of a transformer, with high voltages induced in a plurality of secondary windings. The high voltage secondary outputs are each solid-state rectified for passage to individual output loads. Multiple feedback loops control the operation of the chopper preregulator, one being responsive to the current through the primary winding and another responsive to the DC voltage level at a selected output.

  13. Studies of high-gain microchannel plate photomultipliers

    SciTech Connect

    Oba, K.; Rehak, P.

    1980-01-01

    The characteristics and performance of several kinds of high-gain micro-channel plate photomultipliers have been investigated. Special attention was directed toward (1) lifetime studies, (2) performance in the magnetic field, and (3) timing properties. Lifetime studies include separate investigations of the photocathode quantum efficiency degradation caused by ion feedback, and the deterioration of the micro-channel plate gain. The dependence of the micro-channel plate photomultiplier gain on the intensity and the direction of the magnetic field (up to 7 kGauss) is reported.

  14. Nano-engineered ultra-high-gain microchannel plates

    NASA Astrophysics Data System (ADS)

    Beaulieu, D. R.; Gorelikov, D.; de Rouffignac, P.; Saadatmand, K.; Stenton, K.; Sullivan, N.; Tremsin, A. S.

    2009-08-01

    Highly localized and very fast electron amplification of microchannel plates (MCPs) enables a large number of high-resolution and high-sensitivity detection technologies, which provide spatial and/or temporal information for each detected photon/electron/ion/neutron. Although there has been significant progress in photocathode and readout technologies the MCPs themselves have not evolved much from the technology developed several decades ago. Substantial increases in the gain of existing MCP technology have been accomplished by utilizing state-of-the-art processes developed for nano-engineered structures. The gain of treated MCPs with aspect ratio of 40:1 is reproducibly measured to reach unprecedented values of 2×10 5. This gain enhancement is shown to be stable during MCP operation. In addition, the initial experiments indicate improved stability of gain as a function of extracted charge and MCP storage conditions. We also present results from a fully independent thin-film process for manufacturing non-lead glass MCPs using engineered thin films for both the resistive and emissive layers. These substrate-independent MCPs show high gain, less gain degradation with extracted charge, and greater pore-to-pore and plate-to-plate uniformity than has been possible with conventional lead glass structures.

  15. Optical control system for high-voltage terminals

    DOEpatents

    Bicek, John J.

    1978-01-01

    An optical control system for the control of devices in the terminal of an electrostatic accelerator includes a laser that is modulated by a series of preselected codes produced by an encoder. A photodiode receiver is placed in the laser beam at the high-voltage terminal of an electrostatic accelerator. A decoder connected to the photodiode decodes the signals to provide control impulses for a plurality of devices at the high voltage of the terminal.

  16. Dynamics of laser-guided alternating current high voltage discharges

    NASA Astrophysics Data System (ADS)

    Daigle, J.-F.; Théberge, F.; Lassonde, P.; Kieffer, J.-C.; Fujii, T.; Fortin, J.; Châteauneuf, M.; Dubois, J.

    2013-10-01

    The dynamics of laser-guided alternating current high voltage discharges are characterized using a streak camera. Laser filaments were used to trigger and guide the discharges produced by a commercial Tesla coil. The streaking images revealed that the dynamics of the guided alternating current high voltage corona are different from that of a direct current source. The measured effective corona velocity and the absence of leader streamers confirmed that it evolves in a pure leader regime.

  17. High gain amplifiers: Power oscillations and harmonic generation

    SciTech Connect

    Dattoli, G.; Ottaviani, P. L.; Pagnutti, S.

    2007-08-01

    We discuss the power oscillations in saturated high gain free electron laser amplifiers and show that the relevant period can be written in terms of the gain length. We use simple arguments following from the solution of the pendulum equation in terms of Jacobi elliptic functions. Nontrivial effects due to nonlinear harmonic generation and inhomogeneous broadening are discussed too, as well as the saturated dynamics of short pulses.

  18. A high-voltage supply used on miniaturized RLG

    NASA Astrophysics Data System (ADS)

    Miao, Zhifei; Fan, Mingming; Wang, Yuepeng; Yin, Yan; Wang, Dongmei

    2016-01-01

    A high voltage power supply used in laser gyro is proposed in this paper. The power supply which uses a single DC 15v input and fly-back topology is adopted in the main circuit. The output of the power supply achieve high to 3.3kv voltage in order to light the RLG. The PFM control method is adopted to realize the rapid switching between the high voltage state and the maintain state. The resonant chip L6565 is used to achieve the zero voltage switching(ZVS), so the consumption is reduced and the power efficiency is improved more than 80%. A special circuit is presented in the control portion to ensure symmetry of the two RLG's arms current. The measured current accuracy is higher than 5‰ and the current symmetry of the two RLG's arms up to 99.2%.

  19. A compact 100 kV high voltage glycol capacitor

    NASA Astrophysics Data System (ADS)

    Wang, Langning; Liu, Jinliang; Feng, Jiahuai

    2015-01-01

    A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

  20. Research on synchronization of 15 parallel high gain photoconductive semiconductor switches triggered by high power pulse laser diodes

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Xia, Liansheng; Chen, Yi; Liu, Yi; Yang, Chao; Ye, Mao; Deng, Jianjun

    2015-01-01

    The synchronization of 15 parallel high gain gallium arsenide photoconductive semiconductor switches (GaAs PCSS) has been researched aiming to get higher output voltage. Each PCSS is triggered independently by a high power pulse laser diode. The pulse width, energy, peak power, and central wavelength of the laser pulse are approximately 18 ns, 360 μJ, 20 kW, and 905 nm, respectively. In the stacked Blumlein transmission lines structure, the synchronous conduction of 15 parallel GaAs PCSSs has been achieved by offering optimized bias voltage and laser parameters. The method of synchronization calculation is given, and the synchronization of the 15 parallel GaAs PCSSs is measured as 775 ps. Furthermore, influences of the bias voltage, laser parameters on the synchronization are analyzed. In the output terminal, superimposed by the output voltages of 15 Blumlein transmission lines, the total output voltage reaches up to 328 kV, which is the highest output voltage of GaAs PCSSs that has been reported so far.

  1. High-voltage virtual-cathode microwave simulations

    SciTech Connect

    Thode, L.; Snell, C.M.

    1991-01-01

    In contrast to a conventional microwave tube, a virtual-cathode device operates above the space-charge limit where the depth of the space-charge potential is sufficiently large to cause electron reflection. The region associated with electron reflection is referred to as a virtual cathode. Microwaves can be generated through oscillations in the position of the virtual cathode and by reflexing electrons trapped in the potential well formed between the real and virtual cathodes. A virtual-cathode device based on the first mechanism is a vircator while one based on latter mechanism is a reflex diode. A large number of low-voltage virtual-cathode microwave configurations have been investigated. Initial simulations of a high-voltage virtual-cathode device using a self-consistent particle-in-cell code indicated reasonable conversion efficiency with no frequency chirping. The nonchirping character of the high-voltage virtual-cathode device lead to the interesting possibility of locking four very-high-power microwave devices together using the four transmission lines available at Aurora. Subsequently, in support of two high-voltage experiments, simulations were used to investigate the effect of field-emission threshold and velvet position on the cathode; anode and cathode shape; anode-cathode gap spacing; output waveguide radius; diode voltage; a cathode-coaxial-cavity resonator; a high-frequency ac-voltage drive; anode foil scattering and energy loss; and ion emission on the microwave frequency and power. Microwave

  2. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    NASA Technical Reports Server (NTRS)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

  3. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    NASA Technical Reports Server (NTRS)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources - a nominal 300-Volt high voltage input bus and a nominal 28-Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power supplies that provide power to the thruster auxiliary supplies, and two parallel 7.5 kilowatt power supplies that are capable of providing up to 15 kilowatts of total power at 300-Volts to 500-Volts to the thruster discharge supply. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall Effect Thruster. The performance of unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate the exceptional performance with full power efficiencies exceeding 97. With a space-qualified silicon carbide or similar high voltage, high efficiency power device, this design could evolve into a flight design for future missions that require high power electric propulsion systems.

  4. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls...

  5. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls...

  6. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls...

  7. High performance dc-dc conversion with voltage multipliers

    NASA Technical Reports Server (NTRS)

    Harrigill, W. T.; Myers, I. T.

    1974-01-01

    The voltage multipliers using capacitors and diodes first developed by Cockcroft and Walton in 1932 were reexamined in terms of state of the art fast switching transistors and diodes, and high energy density capacitors. Because of component improvements, the voltage multiplier, used without a transformer, now appears superior in weight to systems now in use for dc-dc conversion. An experimental 100-watt 1000-volt dc-dc converter operating at 100 kHz was built, with a component weight of about 1 kg/kW. Calculated and measured values of output voltage and efficiency agreed within experimental error.

  8. High voltage electrical amplifier having a short rise time

    DOEpatents

    Christie, David J.; Dallum, Gregory E.

    1991-01-01

    A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

  9. Planar LTCC transformers for high voltage flyback converters: Part II.

    SciTech Connect

    Schofield, Daryl; Schare, Joshua M., Ph.D.; Slama, George; Abel, David

    2009-02-01

    This paper is a continuation of the work presented in SAND2007-2591 'Planar LTCC Transformers for High Voltage Flyback Converters'. The designs in that SAND report were all based on a ferrite tape/dielectric paste system originally developed by NASCENTechnoloy, Inc, who collaborated in the design and manufacturing of the planar LTCC flyback converters. The output/volume requirements were targeted to DoD application for hard target/mini fuzing at around 1500 V for reasonable primary peak currents. High voltages could be obtained but with considerable higher current. Work had begun on higher voltage systems and is where this report begins. Limits in material properties and processing capabilities show that the state-of-the-art has limited our practical output voltage from such a small part volume. In other words, the technology is currently limited within the allowable funding and interest.

  10. Design & Fabrication of a High-Voltage Photovoltaic Cell

    SciTech Connect

    Felder, Jennifer; /North Carolina State U. /SLAC

    2012-09-05

    Silicon photovoltaic (PV) cells are alternative energy sources that are important in sustainable power generation. Currently, applications of PV cells are limited by the low output voltage and somewhat low efficiency of such devices. In light of this fact, this project investigates the possibility of fabricating high-voltage PV cells on float-zone silicon wafers having output voltages ranging from 50 V to 2000 V. Three designs with different geometries of diffusion layers were simulated and compared in terms of metal coverage, recombination, built-in potential, and conduction current density. One design was then chosen and optimized to be implemented in the final device design. The results of the simulation serve as a feasibility test for the design concept and provide supportive evidence of the effectiveness of silicon PV cells as high-voltage power supplies.

  11. ZnO nanowire UV photodetectors with high internal gain.

    PubMed

    Soci, C; Zhang, A; Xiang, B; Dayeh, S A; Aplin, D P R; Park, J; Bao, X Y; Lo, Y H; Wang, D

    2007-04-01

    ZnO nanowire (NW) visible-blind UV photodetectors with internal photoconductive gain as high as G approximately 108 have been fabricated and characterized. The photoconduction mechanism in these devices has been elucidated by means of time-resolved measurements spanning a wide temporal domain, from 10-9 to 102 s, revealing the coexistence of fast (tau approximately 20 ns) and slow (tau approximately 10 s) components of the carrier relaxation dynamics. The extremely high photoconductive gain is attributed to the presence of oxygen-related hole-trap states at the NW surface, which prevents charge-carrier recombination and prolongs the photocarrier lifetime, as evidenced by the sensitivity of the photocurrrent to ambient conditions. Surprisingly, this mechanism appears to be effective even at the shortest time scale investigated of t < 1 ns. Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products (GB) higher than approximately 10 GHz. The high gain and low power consumption of NW photodetectors promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects. PMID:17358092

  12. Characteristics of current filamentation in high gain photoconductive semiconductor switching

    SciTech Connect

    Zutavern, F J; Loubriel, G M; O'Malley, M W; Helgeson, W D; McLaughlin, D L; Denison, G J

    1992-01-01

    Characteristics of current filamentation are reported for high gain photoconductive semiconductor switches (PCSS). Infrared photoluminescence is used to monitor carrier recombination radiation during fast initiation of high gain switching in large (1.5 cm gap) lateral GaAs PCSS. Spatial modulation of the optical trigger, a 200--300 ps pulse width laser, is examined. Effects on the location and number of current filaments, rise time, and delay to high gain switching, minimum trigger energy, and degradation of switch contacts are presented. Implications of these measurements for the theoretical understanding and practical development of these switches are discussed. Efforts to increase current density and reduce switch size and optical trigger energy requirements are described. Results from contact development and device lifetime testing are presented and the impact of these results on practical device applications is discussed.

  13. Surface effects in high voltage silicon solar cells

    NASA Technical Reports Server (NTRS)

    Meulenberg, A.; Arndt, R. A.

    1982-01-01

    The surface of low-resistivity silicon solar cells appears to be a major source of dark diffusion current. This region, consisting of the interface and the adjacent heavily doped layer, therefore, prevents attainment of the high open-circuit voltages expected from these cells. This paper describes the experimental effort carried out to reduce the various contributions of dark current from the surface. Analysis of results from this effort points to means of improving cell voltages by changing processing and structures.

  14. High voltage series connected tandem junction solar battery

    DOEpatents

    Hanak, Joseph J.

    1982-01-01

    A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

  15. Caustic Singularities Of High-Gain, Dual-Shaped Reflectors

    NASA Technical Reports Server (NTRS)

    Galindo, Victor; Veruttipong, Thavath W.; Imbriale, William A.; Rengarajan, Sambiam

    1991-01-01

    Report presents study of some sources of error in analysis, by geometric theory of diffraction (GTD), of performance of high-gain, dual-shaped antenna reflector. Study probes into underlying analytic causes of singularity, with view toward devising and testing practical methods to avoid problems caused by singularity. Hybrid physical optics (PO) approach used to study near-field spillover or noise-temperature characteristics of high-gain relector antenna efficiently and accurately. Report illustrates this approach and underlying principles by presenting numerical results, for both offset and symmetrical reflector systems, computed by GTD, PO, and PO/GO methods.

  16. Effects of Displacement Damage on the Time-Resolved Gain and Bandwidth of a Low Breakdown Voltage Si Avalanche Photodiode

    NASA Technical Reports Server (NTRS)

    Laird, Jamie S.; Onoda, Shinobu; Hirao, Toshio; Becker, Heidi; Johnston, Allan; Laird, Jamie S.; Itoh, Hisayoshi

    2006-01-01

    Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.

  17. High voltage switch triggered by a laser-photocathode subsystem

    DOEpatents

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  18. High gain proportional rf control stability at TESLA cavities

    NASA Astrophysics Data System (ADS)

    Vogel, Elmar

    2007-05-01

    Fast proportional rf control is used as the basis for rf field regulation in actual linear accelerator projects like the international linear collider (ILC) and the European x-ray free electron laser (XFEL) based on TESLA technology. Additional control loops improve the field regulation by treating repetitive effects and compensating the beam loading. Nevertheless, the ability for high gain operation of the fast loops is desirable for the strong suppression of nonpredictive and nonrepetitive disturbances. TESLA cavities host nine fundamental modes (FMs) where only one is used for beam acceleration. The unwanted FMs have a significant influence on the proportional rf control loop stability at high gains. Within this paper, the stability of proportional rf control loops taking the FMs and digitalization effects into account will be discussed in detail together with measures enabling a significant increase of the gain values.

  19. Investigation of high voltage spacecraft system interactions with plasma environments

    NASA Technical Reports Server (NTRS)

    Stevens, N. J.; Berkopec, F. D.; Purvis, C. K.; Grier, N.; Staskus, J.

    1978-01-01

    The exposure of high voltage spacecraft systems to the charged particle environment of space can produce interactions that will influence system operation. An experimental investigation of these interactions has been undertaken for insulator and conductor test surfaces biased up to plus or minus 1 kV in a simulated low earth orbit charged particle environment. It has been found that these interactions are controlled by the insulator surfaces surrounding the biased conductors. For positive applied voltages the electron current collection can be enhanced by the insulators. For negative applied voltages the insulator surface confines the voltage to the conductor region; this can cause arcing. Understanding these interactions and the technology to control their impact on system operation is essential to the design of solar cell arrays for ion drive propulsion applications that use direct drive power processing.

  20. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  1. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  2. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  3. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  4. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  5. High-Capacity, High-Voltage Composite Oxide Cathode Materials

    NASA Technical Reports Server (NTRS)

    Hagh, Nader M.

    2015-01-01

    This SBIR project integrates theoretical and experimental work to enable a new generation of high-capacity, high-voltage cathode materials that will lead to high-performance, robust energy storage systems. At low operating temperatures, commercially available electrode materials for lithium-ion (Li-ion) batteries do not meet energy and power requirements for NASA's planned exploration activities. NEI Corporation, in partnership with the University of California, San Diego, has developed layered composite cathode materials that increase power and energy densities at temperatures as low as 0 degC and considerably reduce the overall volume and weight of battery packs. In Phase I of the project, through innovations in the structure and morphology of composite electrode particles, the partners successfully demonstrated an energy density exceeding 1,000 Wh/kg at 4 V at room temperature. In Phase II, the team enhanced the kinetics of Li-ion transport and electronic conductivity at 0 degC. An important feature of the composite cathode is that it has at least two components that are structurally integrated. The layered material is electrochemically inactive; however, upon structural integration with a spinel material, the layered material can be electrochemically activated and deliver a large amount of energy with stable cycling.

  6. Gaseous insulators for high voltage electrical equipment

    DOEpatents

    Christophorou, Loucas G.; James, David R.; Pace, Marshall O.; Pai, Robert Y.

    1979-01-01

    Gaseous insulators comprise compounds having high attachment cross sections for electrons having energies in the 0-1.3 electron volt range. Multi-component gaseous insulators comprise compounds and mixtures having overall high electron attachment cross sections in the 0-1.3 electron volt range and moderating gases having high cross sections for inelastic interactions with electrons of energies 1-4 electron volts. Suitable electron attachment components include hexafluorobutyne, perfluorobutene-2, perfluorocyclobutane, perfluorodimethylcyclobutane, perfluorocyclohexene, perfluoromethylcyclohexane, hexafluorobutadiene, perfluoroheptene-1 and hexafluoroazomethane. Suitable moderating gases include N.sub.2, CO, CO.sub.2 and H.sub.2. The gaseous insulating mixture can also contain SF.sub.6, perfluoropropane and perfluorobenzene.

  7. Gaseous insulators for high voltage electrical equipment

    DOEpatents

    Christophorou, Loucas G.; James, David R.; Pace, Marshall O.; Pai, Robert Y.

    1981-01-01

    Gaseous insulators comprise compounds having high attachment cross sections for electrons having energies in the 0-1.3 electron volt range. Multi-component gaseous insulators comprise compounds and mixtures having overall high electron attachment cross sections in the 0-1.3 electron volt range and moderating gases having high cross sections for inelastic interactions with electrons of energies 1-4 electron volts. Suitable electron attachment components include hexafluorobutyne, perfluorobutene-2, perfluorocyclobutane, perfluorodimethylcyclobutane, perfluorocyclohexene, perfluoromethylcyclohexane, hexafluorobutadiene, perfluoroheptene-1 and hexafluoroazomethane. Suitable moderating gases include N.sub.2, CO, CO.sub.2 and H.sub.2. The gaseous insulating mixture can also contain SF.sub.6, perfluoropropane and perfluorobenzene.

  8. High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

    PubMed

    Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

    2014-05-21

    We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics. PMID:24727896

  9. A high voltage nanosecond pulser with independently adjustable output voltage, pulse width, and pulse repetition frequency

    NASA Astrophysics Data System (ADS)

    Prager, James; Ziemba, Timothy; Miller, Kenneth; Carscadden, John; Slobodov, Ilia

    2014-10-01

    Eagle Harbor Technologies (EHT) is developing a high voltage nanosecond pulser capable of generating microwaves and non-equilibrium plasmas for plasma medicine, material science, enhanced combustion, drag reduction, and other research applications. The EHT nanosecond pulser technology is capable of producing high voltage (up to 60 kV) pulses (width 20-500 ns) with fast rise times (<10 ns) at high pulse repetition frequency (adjustable up to 100 kHz) for CW operation. The pulser does not require the use of saturable core magnetics, which allows for the output voltage, pulse width, and pulse repetition frequency to be fully adjustable, enabling researchers to explore non-equilibrium plasmas over a wide range of parameters. A magnetic compression stage can be added to improve the rise time and drive lower impedance loads without sacrificing high pulse repetition frequency operation. Work supported in part by the US Navy under Contract Number N00014-14-P-1055 and the US Air Force under Contract Number FA9550-14-C-0006.

  10. E-beam high voltage switching power supply

    DOEpatents

    Shimer, Daniel W.; Lange, Arnold C.

    1997-01-01

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

  11. E-beam high voltage switching power supply

    DOEpatents

    Shimer, D.W.; Lange, A.C.

    1997-03-11

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360{degree}/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs.

  12. Dispersion relations for 1D high-gain FELs

    SciTech Connect

    Webb, S.D.; Litvinenko, V.N.

    2010-08-23

    We present analytical results for the one-dimensional dispersion relation for high-gain FELs. Using kappa-n distributions, we obtain analytical relations between the dispersion relations for various order kappa distributions. Since an exact solution exists for the kappa-1 (Lorentzian) distribution, this provides some insight into the number of modes on the way to the Gaussian distribution.

  13. Radiation Response of Emerging High Gain, Low Noise Detectors

    NASA Technical Reports Server (NTRS)

    Becker, Heidi N.; Farr, William H; Zhu, David Q.

    2007-01-01

    Data illustrating the radiation response of emerging high gain, low noise detectors are presented. Ionizing dose testing of silicon internal discrete avalanche photodiodes, and 51-MeV proton testing of InGaAs/InAlAs avalanche photodiodes operated in Geiger mode are discussed.

  14. On Point Designs for High Gain Fast Ignition

    SciTech Connect

    Key, M; Akli, K; Beg, F; Betti, R; Clark, D S; Chen, S N; Freeman, R R; Hansen, S; Hatchett, S P; Hey, D; King, J A; Kemp, A J; Lasinski, B F; Langdon, B; Ma, T; MacKinnon, A J; Meyerhofer, D; Patel, P K; Pasley, J; Phillips, T; Stephens, R B; Stoeckl, C; Foord, M; Tabak, M; Theobald, W; Storm, M; Town, R J; Wilks, S C; VanWoerkom, L; Wei, M S; Weber, R; Zhang, B

    2007-09-27

    Fast ignition research has reached the stage where point designs are becoming crucial to the identification of key issues and the development of projects to demonstrate high gain fast ignition. The status of point designs for cone coupled electron fast ignition and some of the issues they highlight are discussed.

  15. Best Practices for Achieving High, Rapid Reading Gains

    ERIC Educational Resources Information Center

    Carbo, Marie

    2008-01-01

    The percentage of students who read at the proficient level on the National Assessment of Educational Progress (NAEP) has not improved, and is appallingly low. In order for students to achieve high reading gains and become life-long readers, reading comprehension and reading enjoyment must be the top two goals. This article presents several…

  16. High-voltage pulsed generator for dynamic fragmentation of rocks

    NASA Astrophysics Data System (ADS)

    Kovalchuk, B. M.; Kharlov, A. V.; Vizir, V. A.; Kumpyak, V. V.; Zorin, V. B.; Kiselev, V. N.

    2010-10-01

    A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ˜50 ns, current amplitude of ˜6 kA with the 40 Ω active load, and ˜20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

  17. High voltage stability performance of a gamma ray detection device

    SciTech Connect

    Abdullah, Nor Arymaswati; Lombigit, Lojius; Rahman, Nur Aira Abd

    2014-02-12

    An industrial grade digital radiation survey meter device is currently being developed at Malaysian Nuclear Agency. This device used a cylindrical type Geiger Mueller (GM) which acts as a detector. GM detector operates at relatively high direct current voltages depend on the type of GM tube. This thin/thick walled cylindrical type of GM tube operates at 450-650 volts range. Proper value and stability performance of high voltage are important parameters to ensure that this device give a reliable radiation dose measurement. This paper will present an assessment of the stability and performance of the high voltage supply for radiation detector. The assessment is performed using System Identification tools box in MATLAB and mathematical statistics.

  18. Ultra-high gain diffusion-driven organic transistor

    NASA Astrophysics Data System (ADS)

    Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

    2016-02-01

    Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal-semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics.

  19. Ultra-high gain diffusion-driven organic transistor

    PubMed Central

    Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

    2016-01-01

    Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal–semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics. PMID:26829567

  20. High voltage electron microscopy of lunar samples

    NASA Technical Reports Server (NTRS)

    Fernandez-Moran, H.

    1973-01-01

    Lunar pyroxenes from Apollo 11, 12, 14, and 15 were investigated. The iron-rich and magnesium-rich pyroxene specimens were crushed to a grain size of ca. 50 microns and studied by a combination of X-ray and electron diffraction, electron microscopy, 57 Fe Mossbauer spectroscopy and X-ray crystallography techniques. Highly ordered, uniform electron-dense bands, corresponding to exsolution lamellae, with average widths of ca. 230A to 1000A dependent on the source specimen were observed. These were?qr separated by wider, less-dense interband spacings with average widths of ca. 330A to 3100A. In heating experiments, splitting of the dense bands into finer structures, leading finally to obliteration of the exsolution lamellae was recorded. The extensive exsolution is evidence for significantly slower cooling rates, or possibly annealing, at temperatures in the subsolidus range, adding evidence that annealing of rock from the surface of the moon took place at ca. 600 C. Correlation of the band structure with magnetic ordering at low temperatures and iron clustering within the bands was studied.

  1. Cleaning High-Voltage Equipment With Corncob Grit

    NASA Technical Reports Server (NTRS)

    Caveness, C.

    1986-01-01

    High electrical resistance of particles makes power shutdown unnecessary. New, inexpensive method of cleaning high-voltage electrical equipment uses plentiful agricultural product - corncob grit. Method removes dirt and debris from transformers, circuit breakers, and similar equipment. Suitable for utilities, large utility customers, and electrical-maintenance services.

  2. Predicted and actual high voltage failure - A case history

    NASA Astrophysics Data System (ADS)

    Fowler, P. H.; Brent, D. A.; Sidio, G. J.

    In the process of re-developing a high voltage transformer for space use, excellent correlation was found between predicted mechanical failure, predicted partial discharge signature, and real behavior of the parts. Some useful design and inspection criteria for potted high voltage parts were developed on a consistent basis. It was found that partial discharge testing as normally implemented will not necessarily discern all life limiting defects. Three lines of investigation were followed: material properties and stress analysis, prediction of partial discharge signature as a function of defect size, and computer field stress analysis to predict which defects are capable of discharge.

  3. Multichannels high voltage programmable driver for piezoelectric transducer.

    PubMed

    Flaxer, Eli

    2008-03-01

    A complete design of a compact, high voltage, multichannel programmable waveform generator, using an 8 bit microcontroller, 12 bit digital to analog converter, and high voltage operation amplifier, is presented. The user can generate the waveform by several options: classic waveform, calculator, freehand drawing, and using excel or text file. All the waveform data are stored in a nonvolatile memory of the microcontroller. The generator can work as a stand-alone instrument or conjoined with a personal computer. We used this generator as a controller for piezoelectric inertial slider. PMID:18377042

  4. Multichannels high voltage programmable driver for piezoelectric transducer

    NASA Astrophysics Data System (ADS)

    Flaxer, Eli

    2008-03-01

    A complete design of a compact, high voltage, multichannel programmable waveform generator, using an 8bit microcontroller, 12bit digital to analog converter, and high voltage operation amplifier, is presented. The user can generate the waveform by several options: classic waveform, calculator, freehand drawing, and using excel or text file. All the waveform data are stored in a nonvolatile memory of the microcontroller. The generator can work as a stand-alone instrument or conjoined with a personal computer. We used this generator as a controller for piezoelectric inertial slider.

  5. Partial discharge in a high voltage experimental test assembly

    SciTech Connect

    Koss, R.J.; Brainard, J.P.

    1998-07-01

    This study was initiated when a new type of breakdown occurred in a high voltage experimental test assembly. An anomalous current pulse was observed, which indicated partial discharges, some leading to total breakdowns. High voltage insulator defects are shown along with their effect on the electrostatic fields in the breakdown region. OPERA electromagnetic field modeling software is used to calculate the fields and present a cause for the discharge. Several design modifications are investigated and one of the simplest resulted in a 25% decrease in the field at the discharge surface.

  6. Direct experimental determination of voltage across high-low junctions

    NASA Technical Reports Server (NTRS)

    Daud, T.; Lindholm, F. A.

    1986-01-01

    High-low (HL) junctions form a part of many semiconductor devices, including back surface field solar cells. A first experimental determination and interpretation of the voltage across the HL junction under low- and high-injection conditions is presented as a function of the voltage across a nearby p/n junction. Theoretical analysis from first principles is shown to bear well on the experimental results. In addition, a test structure is proposed for measurement of the effective surface recombination velocity at the HL junctions.

  7. High-Voltage, Low-Power BNC Feedthrough Terminator

    NASA Technical Reports Server (NTRS)

    Bearden, Douglas

    2012-01-01

    This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

  8. A method for encapsulating high voltage power transformers

    SciTech Connect

    Sanchez, R.O.

    1990-01-01

    Voltage breakdowns become a major concern in reducing the size of high-voltage power converter transformers. Even the smallest of voids can provide a path for corona discharge which can cause a dielectric breakdown leading to a transformer failure. A method of encapsulating small high voltage transformers has been developed. The method virtually eliminates voids in the impregnation material, provides an exceptional dielectric between windings and provides a mechanically rugged package. The encapsulation material is a CTBN modified mica filled epoxy. The method requires heat/vacuum to impregnate the coil and heat/pressure to cure the encapsulant. The transformer package utilizes a Diallyl Phthalate (DAP) contact assembly in which a coated core/coil assembly is mounted and soldered. This assembly is then loaded into an RTV mold and the encapsulation process begins.

  9. A method for encapsulating high voltage power transformers

    NASA Astrophysics Data System (ADS)

    Sanchez, Robert O.

    Voltage breakdowns become a major concern in reducing the size of high-voltage power converter transformers. Even the smallest of voids can provide a path for corona discharge which can cause a dielectric breakdown leading to a transformer failure. A method of encapsulating small high voltage transformers has been developed. The method virtually eliminates voids in the impregnation material, provides an exceptional dielectric between windings and provides a mechanically rugged package. The encapsulation material is a carboxyl terminated butadiene nitril (CTBN) modified mica filled epoxy. The method requires heat/vacuum to impregnate the coil and heat/pressure to cure the encapsulant. The transformer package utilizes a diallyl phthalate (DAP) contact assembly in which a coated core/coil assembly is mounted and soldered. This assembly is then loaded into an RTV mold and the encapsulation process begins.

  10. Sub-Poissonian shot noise of a high internal gain injection photon detector.

    PubMed

    Memis, Omer Gokalp; Katsnelson, Alex; Kong, Soon-Cheol; Mohseni, Hooman; Yan, Minjun; Zhang, Shuang; Hossain, Tim; Jin, Niu; Adesida, Ilesanmi

    2008-08-18

    The noise performance of an infrared injection photon detector with very high internal gain was investigated at a wavelength of 1.55 mum. The devices showed sub-Poissonian shot noise with Fano factors around 0.55 at 0.7 V at room temperature. Optical to electrical conversion factors of 3000 electrons per absorbed photon were recorded at 0.7 V. The change in noise-equivalent power with respect to bias voltage was evaluated. The optical to electrical conversion factor and Fano factor were measured under increasing illumination and compared to theoretical expectations. PMID:18711508

  11. Ultra-compact Marx-type high-voltage generator

    SciTech Connect

    Goerz, D.A.; Wilson, M.J.

    2000-05-09

    An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

  12. Ultra-compact Marx-type high-voltage generator

    DOEpatents

    Goerz, David A.; Wilson, Michael J.

    2000-01-01

    An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

  13. Cathode driven high gain crossed-field amplifier

    NASA Astrophysics Data System (ADS)

    1983-07-01

    The objective of this three-phase program is to achieve the design of a cathode driven high gain re-entrant Crossed Field Amplifier capable of meeting the parameters of Raytheon Company specification No. 968838 dated 10 May 1978. The effort includes the fabrication and test of three developmental and four final configuration tubes. One final configuration tube will be life tested and two will be delivered to the Navy. The tasks discussed during this report period relate to the cold tests performed on various subassemblies of model no. 4 and on the sealed-in model no. 4 of the S-band high gain cathode driven crossed field amplifier. Based on the performance of model no. 3 certain remedial measures have been implemented in model no. 4 that have resulted in the elimination of key resonances within the tube and an improvement in the isolation between the cathode and anode circuits.

  14. Development of the Fast Scintillation Detector with Programmable High Voltage Adjustment Suitable for Moessbauer Spectroscopy

    SciTech Connect

    Prochazka, R.; Frydrych, J.; Pechousek, J.

    2010-07-13

    This work is focused on a development of a compact fast scintillation detector suitable for Moessbauer spectroscopy (low energy X-ray/{gamma}-ray detection) where high counting rates are inevitable. Optimization of this part was necessary for a reliable function, better time resolution and to avoid a detector pulses pile-up effect. The pile-up effect decreases the measurement performance, significantly depends on the source activity and also on the pulse duration. Our new detection unit includes a fast scintillation crystal YAP:Ce, an R6095 photomultiplier tube, a high voltage power supply socket C9028-01 assembly, an AD5252 digital potentiometer with an I2C interface and an AD8000 ultra fast operation preamplifier. The main advantages of this solution lie in a short pulse duration (less than 200 ns), stable operation for high activities, programmable gain of the high voltage supply and compact design in the aluminum housing.

  15. Study of a High Voltage Ion Engine Power Supply

    NASA Technical Reports Server (NTRS)

    Stuart, Thomas A.; King, Roger J.; Mayer, Eric

    1996-01-01

    A complete laboratory breadboard version of a ion engine power converter was built and tested. This prototype operated on a line voltage of 80-120 Vdc, and provided output ratings of 1100 V at 1.8 kW, and 250 V at 20 mA. The high-voltage (HV) output voltage rating was revised from the original value of 1350 V at the beginning of the project. The LV output was designed to hold up during a 1-A surge current lasting up to 1 second. The prototype power converter included a internal housekeeping power supply which also operated from the line input. The power consumed in housekeeping was included in the overall energy budget presented for the ion engine converter. HV and LV output voltage setpoints were commanded through potentiometers. The HV converter itself reached its highest power efficiency of slightly over 93% at low line and maximum output. This would dip below 90% at high line. The no-load (rated output voltages, zero load current) power consumption of the entire system was less than 13 W. A careful loss breakdown shows that converter losses are predominately Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) conduction losses and HV rectifier snubbing losses, with the rectifier snubbing losses becoming predominant at high line. This suggests that further improvements in power efficiency could best be obtained by either developing a rectifier that was adequately protected against voltage overshoot with less snubbing, or by developing a pre-regulator to reduced the range of line voltage on the converter. The transient testing showed the converter to be fully protected against load faults, including a direct short-circuit from the HV output to the LV output terminals. Two currents sensors were used: one to directly detect any core ratcheting on the output transformer and re-initiate a soft start, and the other to directly detect a load fault and quickly shut down the converter for load protection. The finished converter has been extensively fault tested

  16. High voltage pulse ignition of mercury discharge hollow cathodes

    NASA Technical Reports Server (NTRS)

    Wintucky, E. G.

    1973-01-01

    A high voltage pulse generated by a capacitor discharge into a step-up transformer has been demonstrated capable of consistently igniting hollow cathode mercury discharges at propellant flows and heater power levels much below those required by conventional cathode starting. Results are presented for 3.2-mm diameter enclosed and open keeper cathodes. Starting characteristics are shown to depend on keeper voltage, mercury flow rate, heater power, keeper orifice size, emissive materials, and electrode to which the pulse is applied. This starting technique has been used to start a cathode over 10,000 times without any degradation of starting capability.

  17. Development of Murray Loop Bridge for High Induced Voltage

    NASA Astrophysics Data System (ADS)

    Isono, Shigeki; Kawasaki, Katsutoshi; Kobayashi, Shin-Ichi; Ishihara, Hayato; Chiyajo, Kiyonobu

    In the case of the cable fault that ground fault resistance is less than 10MΩ, Murray Loop Bridge is excellent as a fault locator in location accuracy and the convenience. But, when the induction of several hundred V is taken from the single core cable which adjoins it, a fault location with the high voltage Murray Loop Bridge becomes difficult. Therefore, we developed Murray Loop Bridge, which could be applied even when the induced voltage of several hundred V occurs in the measurement cable. The evaluation of the fault location accuracy was done with the developed prototype by the actual line and the training equipment.

  18. High gain preamplifier based on optical parametric amplification

    DOEpatents

    Jovanovic, Igor; Bonner, Randal A.

    2004-08-10

    A high-gain preamplifier based on optical parametric amplification. A first nonlinear crystal is operatively connected to a second nonlinear crystal. A first beam relay telescope is operatively connected to a second beam relay telescope, to the first nonlinear crystal, and to the second nonlinear crystal. A first harmonic beamsplitter is operatively connected to a second harmonic beamsplitter, to the first nonlinear crystal, to the second nonlinear crystal, to the first beam relay telescope, and to the second beam relay telescope.

  19. Design issues for a laboratory high gain fusion facility

    SciTech Connect

    Hogan, W.J.

    1987-11-02

    In an inertial fusion laboratory high gain facility, experiments will be carried out with up to 1000 MJ of thermonuclear yield. The experiment area of such a facility will include many systems and structures that will have to operate successfully in the difficult environment created by the sudden large energy release. This paper estimates many of the nuclear effects that will occur, discusses the implied design issues and suggests possible solutions so that a useful experimental facility can be built. 4 figs.

  20. Scattering Efficiency of High-Voltage Tethers in Space

    NASA Technical Reports Server (NTRS)

    Krivorutsky, E. N.; Khazanov, G. V.; Gamayunov, K. V.; Avanov, L. A.

    2005-01-01

    Several concepts have been proposed to remediate the effect of artificial Radiation Belts (RB) in Space Plasma. Among them is the high-voltage electrostatic tether remediation technique. Preliminary analysis that has been carried out later by several groups showed, that this technique could be very efficient and is able to control relativistic electron energies of artificial RB population. The relativistic electron population is the one of the most important topic of US Space Weather studies and very dangerous to many civilian and military space assets, it is also important to study some fundamentals of scattering efficiency of high-voltage tethers in space plasma. There are several fundamental issues that should be examined in order to validate high-voltage tether artificial RB remediation concept. The most critical among them are: power consumption, the size and stability of the plasma sheath around the tether, and scattering efficiency of this high-voltage system that is ultimately related with the plasma sheath size. This study would be focused on the scattering process itself and artificial RB remediation assuming that power consumption and the size of the plasma sheath are known.

  1. Laboratory 15 kV high voltage solar array facility

    NASA Technical Reports Server (NTRS)

    Kolecki, J. C.; Gooder, S. T.

    1976-01-01

    The laboratory high voltage solar array facility is a photoelectric power generating system. Consisting of nine modules with over 23,000 solar cells, the facility is capable of delivering more than a kilowatt of power. The physical and electrical characteristics of the facility are described.

  2. 59. View of high voltage (4160 volts alternating current) electric ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    59. View of high voltage (4160 volts alternating current) electric load center and motor control center at mezzanine level in transmitter building no. 102. - Clear Air Force Station, Ballistic Missile Early Warning System Site II, One mile west of mile marker 293.5 on Parks Highway, 5 miles southwest of Anderson, Anderson, Denali Borough, AK

  3. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOEpatents

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  4. The design and development of a high voltage power supply

    NASA Technical Reports Server (NTRS)

    Ting, R.

    1974-01-01

    A high voltage circuit system was redesigned, breadboarded, and tested to meet revised specification requirements. Circuit component subassemblies are described and include the firing unit, regulator, dc to dc converter, and output and trigger circuits. Design changes, tests, and equipment fabrication are outlined chronologically by month. A list of design specifications is included.

  5. High voltage gas insulated transmission line with continuous particle trapping

    DOEpatents

    Cookson, Alan H.; Dale, Steinar J.

    1983-01-01

    This invention provides a novel high voltage gas insulated transmission line utilizing insulating supports spaced at intervals with snap-in means for supporting a continuous trapping apparatus and said trapping apparatus having perforations and cutouts to facilitate trapping of contaminating particles and system flexibility.

  6. Deep Space One High-Voltage Bus Management

    NASA Technical Reports Server (NTRS)

    Rachocki, Ken; Nieraeth, Donald

    1999-01-01

    The design of the High Voltage Power Converter Unit on DS1 allows both the spacecraft avionics and ion propulsion to operate in a stable manner near the PPP of the solar array. This approach relies on a fairly well-defined solar array model to determine the projected PPP. The solar array voltage set-points have to be updated every week to maintain operation near PPP. Stable operation even to the LEFT of the Peak Power Point is achievable so long as you do not change the operating power level of the ion engine. The next step for this technology is to investigate the use of onboard autonomy to determine the optimum SA voltage regulation set-point (i.e. near the PPP); this is for future missions that have one or more ion propulsion subsystems.

  7. High resolution BPMS with integrated gain correction system

    SciTech Connect

    Wendt, M.; Briegel, C.; Eddy, N.; Fellenz, B.; Gianfelice, E.; Prieto, P.; Rechenmacher, R.; Voy, D.; Terunuma, N.; Urakawa, J.; /KEK, Tsukuba

    2009-08-01

    High resolution beam position monitors (BPM) are an essential tool to achieve and reproduce a low vertical beam emittance at the KEK Accelerator Test Facility (ATF) damping ring. The ATF damping ring (DR) BPMs are currently upgraded with new high resolution read-out electronics. Based on analog and digital down-conversion techniques, the upgrade includes an automatic gain calibration system to correct for slow drift effects and ensure high reproducible beam position readings. The concept and its technical realization, as well as preliminary results of beam studies are presented.

  8. High gain and low excess noise near infrared single photon avalanche detector

    NASA Astrophysics Data System (ADS)

    Linga, Krishna; Yevtukhov, Yuriy; Liang, Bing

    2009-05-01

    We present the discrete amplification approach used for development of a very high gain and low excess noise factor in the near infrared wavelength region. The devices have the following performance characteristics: gain > 2X105, excess noise factor < 1.05, rise time < 350ps, fall time < 500ps and operating voltage < 60V. In the photon counting mode, the devices can be operated in the non-gated mode under a constant DC bias and do not require any external quenching circuit. These devices are ideal for researchers in the fields of deep space optical communication, spectroscopy, industrial and scientific instrumentation, Ladar/Lidar, quantum cryptography, night vision and other military, defense and aerospace applications.

  9. 30 CFR 77.800 - High-voltage circuits; circuit breakers.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High-voltage circuits supplying power to portable or mobile equipment shall be protected by suitable...

  10. 30 CFR 77.800 - High-voltage circuits; circuit breakers.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... devices to provide protection against under voltage, grounded phase, short circuit and overcurrent. High... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers....