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Sample records for high-performance polycrystalline silicon

  1. High-performance flexible thin-film transistors fabricated using print-transferrable polycrystalline silicon membranes on a plastic substrate

    NASA Astrophysics Data System (ADS)

    Qin, Guoxuan; Yuan, Hao-Chih; Yang, Hongjun; Zhou, Weidong; Ma, Zhenqiang

    2011-02-01

    Inexpensive polycrystalline Si (poly-Si) with large grain size is highly desirable for flexible electronics applications. However, it is very challenging to directly deposit high-quality poly-Si on plastic substrates due to processing constrictions, such as temperature tolerance and residual stress. In this paper, we present our study on poly-Si membranes that are stress free and most importantly, are transferrable to any substrate including a low-temperature polyethylene terephthalate (PET) substrate. We formed poly-Si-on-insulator by first depositing small-grain size poly-Si on an oxidized Si wafer. We then performed high-temperature annealing for recrystallization to obtain larger grain size. After selective doping on the poly-Si-on-insulator, buried oxide was etched away. By properly patterning the poly-Si layer, residual stress in the released poly-Si membranes was completely relaxed. The flat membrane topology allows the membranes to be print transferred to any substrates. High-performance TFTs were demonstrated on the transferred poly-Si membranes on a PET substrate.

  2. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  3. Casting larger polycrystalline silicon ingots

    SciTech Connect

    Wohlgemuth, J.; Tomlinson, T.; Cliber, J.; Shea, S.; Narayanan, M.

    1995-08-01

    Solarex has developed and patented a directional solidification casting process specifically designed for photovoltaics. In this process, silicon feedstock is melted in a ceramic crucible and solidified into a large grained semicrystalline silicon ingot. In-house manufacture of low cost, high purity ceramics is a key to the low cost fabrication of Solarex polycrystalline wafers. The casting process is performed in Solarex designed casting stations. The casting operation is computer controlled. There are no moving parts (except for the loading and unloading) so the growth process proceeds with virtually no operator intervention Today Solarex casting stations are used to produce ingots from which 4 bricks, each 11.4 cm by 11.4 cm in cross section, are cut. The stations themselves are physically capable of holding larger ingots, that would yield either: 4 bricks, 15 cm by 15 an; or 9 bricks, 11.4 cm by 11.4 an in cross-section. One of the tasks in the Solarex Cast Polycrystalline Silicon PVMaT Program is to design and modify one of the castings stations to cast these larger ingots. If successful, this effort will increase the production capacity of Solarex`s casting stations by 73% and reduce the labor content for casting by an equivalent percentage.

  4. Losses in polycrystalline silicon waveguides

    NASA Astrophysics Data System (ADS)

    Foresi, J. S.; Black, M. R.; Agarwal, A. M.; Kimerling, L. C.

    1996-04-01

    The losses of polycrystalline silicon (polySi) waveguides clad by SiO2 are measured by the cutback technique. We report losses of 34 dB/cm at a wavelength of 1.55 μm in waveguides fabricated from chemical mechanical polished polySi deposited at 625 °C. These losses are two orders of magnitude lower than reported absorption measurements for polySi. Waveguides fabricated from unpolished polySi deposited at 625 °C exhibit losses of 77 dB/cm. We find good agreement between calculated and measured losses due to surface scattering.

  5. Polycrystalline Silicon: a Biocompatibility Assay

    SciTech Connect

    Pecheva, E.; Fingarova, D.; Pramatarova, L.; Hikov, T.; Laquerriere, P.; Bouthors, Sylvie; Dimova-Malinovska, D.; Montgomery, P.

    2010-01-21

    Polycrystalline silicon (poly-Si) layers were functionalized through the growth of biomimetic hydroxyapatite (HA) on their surface. HA is the mineral component of bones and teeth and thus possesses excellent bioactivity and biocompatibility. MG-63 osteoblast-like cells were cultured on both HA-coated and un-coated poly-Si surfaces for 1, 3, 5 and 7 days and toxicity, proliferation and cell morphology were investigated. The results revealed that the poly-Si layers were bioactive and compatible with the osteoblast-like cells. Nevertheless, the HA coating improved the cell interactions with the poly-Si surfaces based on the cell affinity to the specific chemical composition of the bone-like HA and/or to the higher HA roughness.

  6. Hydrogen migration in polycrystalline silicon

    SciTech Connect

    Nickel, N.H.; Jackson, W.B.; Walker, J.

    1996-03-01

    Hydrogen migration in solid-state crystallized and low-pressure chemical-vapor-deposited (LPCVD) polycrystalline silicon (poly-Si) was investigated by deuterium diffusion experiments. The concentration profiles of deuterium, introduced into the poly-Si samples either from a remote D plasma or from a deuterated amorphous-silicon layer, were measured as a function of time and temperature. At high deuterium concentrations the diffusion was dispersive depending on exposure time. The dispersion is consistent with multiple trapping within a distribution of hopping barriers. The data can be explained by a two-level model used to explain diffusion in hydrogenated amorphous silicon. The energy difference between the transport level and the deuterium chemical potential was found to be about 1.2{endash}1.3 eV. The shallow levels for hydrogen trapping are about 0.5 eV below the transport level, while the deep levels are about 1.5{endash}1.7 eV below. The hydrogen chemical potential {mu}{sub H} decreases as the temperature increases. At lower concentrations, {mu}{sub H} was found to depend markedly on the method used to prepare the poly-Si, a result due in part to the dependence of crystallite size on the deposition process. Clear evidence for deuterium deep traps was found only in the solid-state crystallized material. The LPCVD-grown poly-Si, with columnar grains extending through the film thickness, displayed little evidence of deep trapping, and exhibited enhanced D diffusion. Many concentration profiles in the columnar LPCVD material indicated complex diffusion behavior, perhaps reflecting spatial variations of trap densities, complex formation, and/or multiple transport paths. Many aspects of the diffusion in poly-Si are consistent with diffusion data obtained in amorphous silicon. {copyright} {ital 1996 The American Physical Society.}

  7. Process Research of Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1984-01-01

    A passivation process (hydrogenation) that will improve the power generation of solar cells fabricated from presently produced, large grain, cast polycrystalline silicon (Semix), a potentially low cost material are developed. The first objective is to verify the operation of a DC plasma hydrogenation system and to investigate the effect of hydrogen on the electrical performance of a variety of polycrystalline silicon solar cells. The second objective is to parameterize and optimize a hydrogenation process for cast polycrystalline silicon, and will include a process sensitivity analysis. The sample preparation for the first phase is outlined. The hydrogenation system is described, and some early results that were obtained using the hydrogenation system without a plasma are summarized. Light beam induced current (LBIC) measurements of minicell samples, and their correlation to dark current voltage characteristics, are discussed.

  8. Process for Polycrystalline film silicon growth

    DOEpatents

    Wang, Tihu; Ciszek, Theodore F.

    2001-01-01

    A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

  9. Process Research On Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Wohlgemuth, J. H.; Culik, J. S.

    1982-01-01

    The mechanisms limiting performance in polycrystalline silicon was determined. The initial set of experiments in this task entails the fabrication of cells of various thicknesses for four different bulk resistivities between 0.1 and 10 omega-cm. The results for the first two lots are presented.

  10. Phosphorus diffusion in polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    Losee, D. L.; Lavine, J. P.; Trabka, E. A.; Lee, S.-T.; Jarman, C. M.

    1984-02-01

    The diffusion of phosphorus in crystallized amorphous Si layers was studied with secondary-ion mass spectroscopy. A two-dimensional diffusion model is used to find effective grain (Dg) and grain-boundary (Dgb) diffusion coefficients. This simplified model leads to Dgb ≤ 10Dg, which is significantly lower than what has been deduced from conventional, larger grained polysilicon. Our result is consistent with specific-gravity measurements, which found a significantly lower ``mass defect'' for layers deposited amorphous and subsequently crystallized as compared to initially polycrystalline layers.

  11. Polycrystalline silicon on tungsten substrates

    NASA Technical Reports Server (NTRS)

    Bevolo, A. J.; Schmidt, F. A.; Shanks, H. R.; Campisi, G. J.

    1979-01-01

    Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

  12. Hydrogen migration in phosphorous doped polycrystalline silicon

    SciTech Connect

    Nickel, N.H.; Kaiser, I.

    1998-12-31

    Hydrogen diffusion in phosphorous doped polycrystalline silicon was investigated by deuterium diffusion experiments. The presence of phosphorous enhances hydrogen diffusion. For high hydrogen concentrations the activation energy of the effective diffusion-coefficient amounts to 0.25--0.35 eV. At low hydrogen concentrations diffusion is governed by deep traps that are present in an appreciable concentration of 6 {times} 10{sup 18}--10{sup 19} cm{sup {minus}3}. The hydrogen chemical-potential, {mu}{sub H}, decreases with increasing temperature at a rate of {approx}0.002 eV/K. The data are discussed in terms of a two-level model used to describe hydrogen diffusion in amorphous and undoped polycrystalline silicon.

  13. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wrigley, C. Y.

    1984-01-01

    Results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Very small grain or short minority-carrier diffusion length silicon was used. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is sometimes 20 to 40 mV less. The goal was to minimize variations in open-circuit voltage and fill-factor caused by defects by passivating these defects using a hydrogenation process. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystaline silicon solar cells.

  14. Equilibrium shapes of polycrystalline silicon nanodots

    SciTech Connect

    Korzec, M. D. Wagner, B.; Roczen, M.; Schade, M.; Rech, B.

    2014-02-21

    This study is concerned with the topography of nanostructures consisting of arrays of polycrystalline nanodots. Guided by transmission electron microscopy (TEM) measurements of crystalline Si (c-Si) nanodots that evolved from a “dewetting” process of an amorphous Si (a-Si) layer from a SiO{sub 2} coated substrate, we investigate appropriate formulations for the surface energy density and transitions of energy density states at grain boundaries. We introduce a new numerical minimization formulation that allows to account for adhesion energy from an underlying substrate. We demonstrate our approach first for the free standing case, where the solutions can be compared to well-known Wulff constructions, before we treat the general case for interfacial energy settings that support “partial wetting” and grain boundaries for the polycrystalline case. We then use our method to predict the morphologies of silicon nanodots.

  15. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1982-01-01

    The investigation of the performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was continued by fabricating a set of minicell wafers on a selection of 10 cm x 10 cm wafers. A minicell wafer consists of an array of small (approximately 0.2 sq cm in area) photodiodes which are isolated from one another by a mesa structure. The junction capacitance of each minicell was used to obtain the dopant concentration, and therefore the resistivity, as a function of position across each wafer. The results indicate that there is no significant variation in resistivity with position for any of the polycrystalline wafers, whether Semix or Wacker. However, the resistivity of Semix brick 71-01E did decrease slightly from bottom to top.

  16. Solution-processed polycrystalline silicon on paper

    SciTech Connect

    Trifunovic, M.; Ishihara, R.; Shimoda, T.

    2015-04-20

    Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their printability, while these materials lack in the electronic performance when compared to silicon electronics. Silicon electronics, on the other hand, has only recently found their way in solution processes. Printing of cyclopentasilane as the silicon ink has been conducted and devices with far superior electric performance have been made when compared to other ink materials. A thermal annealing step of this material, however, was necessary, which prevented its usage on inexpensive substrates with a limited thermal budget. In this work, we introduce a method that allows polycrystalline silicon (poly-Si) production directly from the same liquid silicon ink using excimer laser irradiation. In this way, poly-Si could be formed directly on top of paper even with a single laser pulse. Using this method, poly-Si transistors were created at a maximum temperature of only 150 °C. This method allows silicon device formation on inexpensive, temperature sensitive substrates such as polyethylene terephthalate, polyethylene naphthalate or paper, which leads to applications that require low-cost but high-speed electronics.

  17. Polycrystalline silicon semiconducting material by nuclear transmutation doping

    DOEpatents

    Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

    1978-01-01

    A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

  18. Polycrystalline silicon ion sensitive field effect transistors

    NASA Astrophysics Data System (ADS)

    Yan, F.; Estrela, P.; Mo, Y.; Migliorato, P.; Maeda, H.; Inoue, S.; Shimoda, T.

    2005-01-01

    We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4 sensing layer. Nearly ideal pH sensitivity (54mV /pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10mV/mM, in solutions with concentration lower than the saturation value, which is about 7 mM.

  19. Amorphous silicon/polycrystalline thin film solar cells

    SciTech Connect

    Ullal, H.S.

    1991-03-13

    An improved photovoltaic solar cell is described including a p-type amorphous silicon layer, intrinsic amorphous silicon, and an n-type polycrystalline semiconductor such as cadmium sulfide, cadmium zinc sulfide, zinc selenide, gallium phosphide, and gallium nitride. The polycrystalline semiconductor has an energy bandgap greater than that of the amorphous silicon. The solar cell can be provided as a single-junction device or a multijunction device.

  20. Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

    NASA Technical Reports Server (NTRS)

    Costogue, E. N.; Ferber, R.; Lutwack, R.; Lorenz, J. H.; Pellin, R.

    1984-01-01

    Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

  1. High-performance silicon nanowire bipolar phototransistors

    NASA Astrophysics Data System (ADS)

    Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

    2016-07-01

    Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

  2. Tribological properties of sintered polycrystalline and single crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.; Srinivasan, M.

    1982-01-01

    Tribological studies and X-ray photoelectron spectroscopy analyses were conducted with sintered polycrystalline and single crystal silicon carbide surfaces in sliding contact with iron at various temperatures to 1500 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on both the friction properties and the surface chemistry of silicon carbide. The main contaminants on the as received sintered polycrystalline silicon carbide surfaces are adsorbed carbon, oxygen, graphite, and silicon dioxide. The surface revealed a low coefficient of friction. This is due to the presence of the graphite on the surface. At temperatures of 400 to 600 C graphite and copious amount of silicon dioxide were observed on the polycrystalline silicon carbide surface in addition to silicon carbide. At 800 C, the amount of the silicon dioxide decreased rapidly and the silicon carbide type silicon and carbon peaks were at a maximum intensity in the XPS spectra. The coefficients of friction were high in the temperature range 400 to 800 C. Small amounts of carbon and oxygen contaminants were observed on the as received single crystal silicon carbide surface below 250 C. Silicon carbide type silicon and carbon peaks were seen on the silicon carbide in addition to very small amount of graphite and silicon dioxide at temperatures of 450 to 800 C.

  3. Deposited silicon photonics: Optical interconnect devices in polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    Preston, Kyle Jonathan

    Silicon photonics has tremendous potential to provide high-bandwidth and low-power data communication for applications such as computing and telecommunication, over length scales ranging from 100 kilometers over fiber to centimeter-length on-chip waveguides. Many silicon photonic building blocks have been demonstrated to date, but critical work remains to determine the best approaches for integrating together silicon photonics with microelectronics. In this thesis, I explore a novel method for integration of silicon photonics on the CMOS platform by using a deposited material: polycrystalline silicon. I will show the first demonstrations of electrically-active optical filters, modulators, and photodetectors in this material. In principle, this material platform would allow for the integration of silicon photonic devices and systems on top of any substrate, including complex CMOS and memory chips or even glass and plastic substrates. In Chapter 1, I introduce the state-of-the-art in silicon photonics, describe several integration schemes under development, and introduce the idea of using deposited materials. In Chapter 2, I demonstrate the use of polysilicon to make integrated microring resonators, and show the integration of different silicon materials together. Chapter 3 discusses the use of polysilicon as both an optical waveguiding layer and an electrode material in slot waveguides for the application of light emitters. Chapter 4 demonstrates the use of a pump-probe experiment to measure the free carrier lifetime in the material and demonstrate all-optical modulation. In Chapter 5, I demonstrate the first high-speed integrated electro-optic modulator in polysilicon, a necessary device for optical transmitters. In Chapter 6, I show how defects inside the same material enable integrated photodetectors at near-infrared telecommunication wavelengths. Chapter 7 shows initial results in adapting the material processing for lower temperatures, necessary for integration

  4. Effect of copper impurity on polycrystalline silicon solar cells

    NASA Technical Reports Server (NTRS)

    Daud, T.; Koliwad, K. M.

    1978-01-01

    The presence of copper impurity, up to 10 to the 15th atoms/cc, in single crystal silicon has been shown to have no deleterious effect on the p-n junction solar cell performance. However, in polycrystalline silicon, copper atoms tend to migrate to the defect sites because of the structural sensitive properties of copper. This study was undertaken to investigate the influence of this behavior of copper impurity on the performance of p-n junction solar cells fabricated from structurally imperfect silicon. Two sets of polycrystalline silicon substrates containing copper were examined. In one set of samples, copper was incorporated during growth, whereas in the other, copper was diffused. Solar cells were fabricated on both the sets of substrates by a standard process. Dark and light I-V and spectral response characteristics of the cells were measured and compared with copper-free polycrystalline silicon solar cells. The results and the model are discussed.

  5. Defect behavior of polycrystalline solar cell silicon

    SciTech Connect

    Schroder, D.K.; Park, S.H.; Hwang, I.G.; Mohr, J.B.; Hanly, M.P.

    1993-05-01

    The major objective of this study, conducted from October 1988 to September 1991, was to gain an understanding of the behavior of impurities in polycrystalline silicon and the influence of these impurities on solar cell efficiency. The authors studied edge-defined film-fed growth (EFG) and cast poly-Si materials and solar cells. With EFG Si they concentrated on chromium-doped materials and cells to determine the role of Cr on solar cell performance. Cast poly-Si samples were not deliberately contaminated. Samples were characterized by cell efficiency, current-voltage, deep-level transient spectroscopy (DLTS), surface photovoltage (SPV), open-circuit voltage decay, secondary ion mass spectrometry, and Fourier transform infrared spectroscopy measurements. They find that Cr forms Cr-B pairs with boron at room temperature and these pairs dissociate into Cr{sub i}{sup +} and B{sup {minus}} during anneals at 210{degrees}C for 10 min. Following the anneal, Cr-B pairs reform at room temperature with a time constant of 230 h. Chromium forms CrSi{sub 2} precipitates in heavily contaminated regions and they find evidence of CrSi{sub 2} gettering, but a lack of chromium segregation or precipitation to grain boundaries and dislocations. Cr-B pairs have well defined DLTS peaks. However, DLTS spectra of other defects are not well defined, giving broad peaks indicative of defects with a range of energy levels in the band gap. In some high-stress, low-efficiency cast poly-Si they detect SiC precipitates, but not in low-stress, high-efficiency samples. SPV measurements result in nonlinear SPV curves in some materials that are likely due to varying optical absorption coefficients due to locally varying stress in the material.

  6. MIS and SIS solar cells on polycrystalline silicon

    SciTech Connect

    Cheek, G.; Mertens, R.

    1980-02-01

    MIS and SIS structured solar cells are receiving much attention in the photovoltaic community. Seemingly, these cells could be a viable alternative to thermally diffused p-n junctions for use on thin-film polycrystalline silicon substrates. This review describes MIS/SIS structured solar cells and the possible advantages of these structures for use with thin-film polycrystalline silicon. The results of efficiency calculations are presented. Also addressed are lifetime stability and fabrication techniques amenable to large scale production. Finally, the relative advantages and disadvantages of these cells and the results obtained are presented.

  7. Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon

    NASA Astrophysics Data System (ADS)

    Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Thompson, M. O.; Tung, C. H.; See, A.

    2002-11-01

    In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.

  8. A new directional solidification technique for polycrystalline solar grade silicon

    NASA Astrophysics Data System (ADS)

    Saito, T.; Shimura, A.; Ichikawa, S.

    A new directional solidification (casting) technique using powder mold releasing agent is described for producing polycrystalline solar grade silicon. Crack-free and stress-free growth of silicon was attainable with fused quartz crucibles coated with nitride powder, such as silicon nitride Si3 N4, on the inner crucible walls. The degree of nitrogen contamination was negligible because of the low nitrogen solubility in solid silicon. Other impurities contents were less than the ppm level. The average grain diameter was close to 0.1 cm. Diffused junction solar cells (n+/p structure) were fabricated by using this boron doped 1 ohm-cm material. An AM1 conversion efficiency of 12.4% on the cells of 20 cm sq area was obtained. The minority carrier diffusion length of this material was estimated to be greater than 80 microns.

  9. Thin-film polycrystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Funghnan, B. W.; Blanc, J.; Phillips, W.; Redfield, D.

    1980-08-01

    Thirty-four new solar cells were fabricated on Wacker Sislo substrates and the AM-1 parameters were measured. A detailed comparison was made between the measurement of minority carrier diffusion length by the OE method and the penetrating light laser scan grain boundary photoresponse linewidth method. The laser scan method has more experimental uncertainty and agrees within 10 to 50% with the QE method. It allows determination of L over a large area. Atomic hydrogen passivation studies continued on Wacker material by three techniques. A method of determining surface recombination velocity, s, from laser scan data was developed. No change in s in completed solar cells after H-plasma treatment was observed within experimental error. H-passivation of bare silicon cars as measured by the new laser scan photoconductivity technique showed very large effects.

  10. Dependence of resistivity on the doping level of polycrystalline silicon

    NASA Technical Reports Server (NTRS)

    Fripp, A. L.

    1975-01-01

    The electrical resistivity of polycrystalline silicon films has been studied as a function of doping concentration and heat treatment. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity of the as-deposited films was widely scattered but independent of dopant atom concentration at the lightly doped levels and was strong function of dopant level in the more heavily doped regions. Postdeposition heat treatments in an oxidizing atmosphere remove scatter in the data. The resultant resistivity for dopant levels less than 10 to the 16th atoms/per cu cm was approximately equal to that of intrinsic silicon. In the next 2 orders of magnitude increase in dopant level, the resistivity dropped 6 orders of magnitude. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

  11. Reactive sticking coefficients for silane and disilane on polycrystalline silicon

    SciTech Connect

    Buss, R.J.; Ho, P.; Breiland, W.G.; Coltrin, M.E.

    1988-04-15

    Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition-rate measurements using molecular beam scattering and a very low-pressure cold-wall reactor. The RSCs have nonlinear Arrhenius temperature dependencies and decrease with increasing flux at low (710 /sup 0/C) temperatures. Several simple models are proposed to explain these observations. The results are compared with previous studies of the SiH/sub 4//Si(s) reaction and low-pressure chemical vapor deposition-rate measurements.

  12. Spherical silicon photonic microcavities: From amorphous to polycrystalline

    NASA Astrophysics Data System (ADS)

    Fenollosa, R.; Garín, M.; Meseguer, F.

    2016-06-01

    Shaping silicon as a spherical object is not an obvious task, especially when the object size is in the micrometer range. This has the important consequence of transforming bare silicon material in a microcavity, so it is able to confine light efficiently. Here, we have explored the inside volume of such microcavities, both in their amorphous and in their polycrystalline versions. The synthesis method, which is based on chemical vapor deposition, causes amorphous microspheres to have a high content of hydrogen that produces an onionlike distributed porous core when the microspheres are crystallized by a fast annealing regime. This substantially influences the resonant modes. However, a slow crystallization regime does not yield pores, and produces higher-quality-factor resonances that could be fitted to the Mie theory. This allows the establishment of a procedure for obtaining size calibration standards with relative errors of the order of 0.1%.

  13. Limiting mechanisms in large-grain polycrystalline silicon Spatial homogeneity

    NASA Technical Reports Server (NTRS)

    Culik, J.; Grimes, K.

    1984-01-01

    An experiment to investigate the spatial homogeneity of large-grain polycrystalline silicon shows a number of performance-loss mechanisms. Arrays of up to 400 small (about 0.2 sq cm in area) photodiodes were fabricated on a selection of 10 cm x 10 cm polycrystalline silicon wafers. Measurements of the illuminated current-voltage (J-V) characteristics were used to generate maps of Voc, Jsc, and FF as a function of position; and dark J-V and LBIC analysis were used to determine the cause of low performance in areas with significantly degraded J-V characteristics. In addition to the presence of inclusions, which act as resistive shunts, the performance of many of the cells is limited by quasineutral recombination current, which may vary by up to an order of magnitude across a wafer. The increase is the result of either electrically-active grain boundaries or numerous subgrain boundaries within the grain bulk. In other isolated instances, the open-circuit voltage is reduced by excess space-charge recombination current that is not correlated with either grain or subgrain boundary activity.

  14. Construction of High-Performance, Low-Cost Photoelectrodes with Controlled Polycrystalline Architectures

    SciTech Connect

    Kyoung-Shin Choi

    2013-06-30

    The major goal of our research was to gain the ability in electrochemical synthesis to precisely control compositions and morphologies of various oxide-based polycrystalline photoelectrodes in order to establish the composition-morphology-photoelectrochemical property relationships while discovering highly efficient photoelectrode systems for use in solar energy conversion. Major achievements include: development of porous n-type BiVO{sub 4} photoanode for efficient and stable solar water oxidation; development of p-type CuFeO{sub 2} photocathode for solar hydrogen production; and junction studies on electrochemically fabricated p-n Cu{sub 2}O homojunction solar cells for efficiency enhancement.

  15. Photoluminescence of silicon after deposition of polycrystalline diamond films

    SciTech Connect

    Aminev, D. F.; Bagaev, V. S.; Galkina, T. I.; Klokov, A. Yu. Krivobok, V. S.; Ralchenko, V. G.; Savel'ev, A. V.

    2009-09-15

    Low-temperature (5K) photoluminescence of silicon substrates in the range 0.8-1.2 eV is studied before and after deposition of polycrystalline diamond films. The diamond films were deposited in the microwave plasma onto high-purity dislocation-free silicon (with the resitivity {rho} {approx} 3 k{Omega} cm) subjected to mechanical polishing or more delicate chemical and mechanical polishing. The deposition temperature was 750-850 deg. C. In the photoluminescence spectra of the samples with the substrates polished chemically and mechanically, two lines, D{sub 1} and D{sub 2}, corresponding to the dislocation-related emission are recorded. Generation of dislocations in the substrates is caused by efficient adhesion of the diamond film and, as a result, by internal stresses that relax with the formation of dislocations. The experimental spectra are practically identical to the photoluminescence spectra observed in silicon ({rho} {approx} 100 {Omega} cm) with the density of dislocations {approx}10{sup 4} cm{sup -2}.

  16. High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995

    SciTech Connect

    Maruska, P

    1996-09-01

    The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

  17. High-performance p-channel polycrystalline-germanium thin-film transistors via excimer laser crystallization and counter doping

    NASA Astrophysics Data System (ADS)

    Liao, Chan-Yu; Huang, Ching-Yu; Huang, Ming-Hui; Chou, Chia-Hsin; Cheng, Huang-Chung

    2016-04-01

    High-quality polycrystalline-germanium (poly-Ge) thin films have been successfully fabricated by excimer laser crystallization (ELC). Grains as large as 1 µm were achieved by ELC at 300 mJ/cm2. Meanwhile, the defect-generated hole concentrations in Ge thin films were significantly reduced. Furthermore, the majority carriers could then be converted to n-type by counter doping (CD) with a suitable dose. Then, high-performance p-channel Ge thin-film transistors (TFTs) with a high on/off current ratio of up to 1.7 × 103 and a high field-effect mobility of up to 208 cm2 V-1 s-1 were demonstrated for a channel width and length both of 0.5 µm. It was revealed that ELC combined with CD is effective for attaining high-performance p-channel poly-Ge TFTs.

  18. Fabricating micro-instruments in surface-micromachined polycrystalline silicon

    SciTech Connect

    Comtois, J.H.; Michalicek, M.A.; Barron, C.C.

    1997-04-01

    Smaller, lighter instruments can be fabricated as Micro-Electro-Mechanical Systems (MEMS), having micron scale moving parts packaged together with associated control and measurement electronics. Batch fabrication of these devices will make economical applications such as condition-based machine maintenance and remote sensing. The choice of instrumentation is limited only by the designer`s imagination. This paper presents one genre of MEMS fabrication, surface-micromachined polycrystalline silicon (polysilicon). Two currently available but slightly different polysilicon processes are presented. One is the ARPA-sponsored ``Multi-User MEMS ProcesS`` (MUMPS), available commercially through MCNC; the other is the Sandia National Laboratories ``Sandia Ultra-planar Multilevel MEMS Technology`` (SUMMiT). Example components created in both processes will be presented, with an emphasis on actuators, actuator force testing instruments, and incorporating actuators into larger instruments.

  19. Predicting fracture in micron-scale polycrystalline silicon MEMS structures.

    SciTech Connect

    Hazra, Siddharth S.; de Boer, Maarten Pieter; Boyce, Brad Lee; Ohlhausen, James Anthony; Foulk, James W., III; Reedy, Earl David, Jr.

    2010-09-01

    Designing reliable MEMS structures presents numerous challenges. Polycrystalline silicon fractures in a brittle manner with considerable variability in measured strength. Furthermore, it is not clear how to use a measured tensile strength distribution to predict the strength of a complex MEMS structure. To address such issues, two recently developed high throughput MEMS tensile test techniques have been used to measure strength distribution tails. The measured tensile strength distributions enable the definition of a threshold strength as well as an inferred maximum flaw size. The nature of strength-controlling flaws has been identified and sources of the observed variation in strength investigated. A double edge-notched specimen geometry was also tested to study the effect of a severe, micron-scale stress concentration on the measured strength distribution. Strength-based, Weibull-based, and fracture mechanics-based failure analyses were performed and compared with the experimental results.

  20. Fabrication of translucent boron nitride dispersed polycrystalline silicon nitride ceramics

    NASA Astrophysics Data System (ADS)

    Joshi, B.; Fu, Z.; Niihara, K.; Lee, S. W.

    2011-03-01

    Optical transparency was achieved at infrared region and overall translucent silicon nitride was fabricated using hot press sintering (HPS). The increase in h-BN content decreased the optical transparency. Microstructral observations shows that the optical, mechanical and tribological properties of BN dispersed polycrystalline Si3N4 ceramics were affected by the density, α:β-phase ratio and content of h-BN in sintered ceramics. The hot pressed samples were prepared from the mixture of α-Si3N4, AlN, MgO and h-BN at 1850°C. The composite contained from 0.25 to 2 mass % BN powder with sintering aids (9% AlN + 3% MgO). Maximum transmittance of 57% was achieved for 0.25 mass % BN doped Si3N4 ceramics. Fracture toughness was increased and wear volume and friction coefficient were decreased with increase in BN content.

  1. Properties of boron-doped thin films of polycrystalline silicon

    SciTech Connect

    Merabet, Souad

    2013-12-16

    The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×10{sup 20}cm{sup −3} has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO{sub 2} deposited at temperatures T{sub d} ranged between 520°C and 605°C and thermally-oxidized in dry oxygen ambient at 945°C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence <ρ{sub 200nm/c−Si}> < <ρ{sub 200nm/SiO2}> and <ρ{sub 520}> < <ρ{sub 605}>. The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO{sub 2}) are clearly different.

  2. Electrical measurements on ion-implanted LPCVD polycrystalline silicon films

    NASA Astrophysics Data System (ADS)

    Huang, Ruey-Shing; Cheng, Chin-Hsiung; Liu, J. C.; Lee, M. K.; Chen, C. T.

    1983-07-01

    The electrical conduction properties of ion implanted polycrystalline silicon films have been studied. The polysilicon films were deposited by pyrolysis of silane at 647°C in LPCVD system onto oxide-coated silicon wafers to a thickness of 0.6 μm. Dopants were itroducd by implanting with boron or phosphorus ions, accelerated to 145 keV; doses ranged from 1 × 10 12 cm -2 to 1 × 10 15 cm -2. Film resistivities spanning 8 orders of magnitude were obtained using this doping range. Current-voltage characteristics of polysilicon resistors were measured at temperatures ranging from 24 to 140°C. The associated barrier heights and activation energies were derived. The grain-boundary trapping states density was estimated to be 5 × 10 12 cm -2. We found that both dopant atom segregation and carrier trapping at the grain boundaries play important roles in polysilicon electrical conduction properties. However, within the dose range studies, the dopant atom segragation is most detrimental to the film conductivity for doses < 1 × 10 13 cm -2; as the dose is increased, carrier trapping effects become more pronounced for doses up to 5 × 10 14 cm -2. For doses ⩾ 5 × 10 14 cm -2, conduction due to carriers tunneling through the potential barriers at grain boundaries has to be considered.

  3. Surface engineered porous silicon for stable, high performance electrochemical supercapacitors

    PubMed Central

    Oakes, Landon; Westover, Andrew; Mares, Jeremy W.; Chatterjee, Shahana; Erwin, William R.; Bardhan, Rizia; Weiss, Sharon M.; Pint, Cary L.

    2013-01-01

    Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10–40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage. PMID:24145684

  4. Surface engineered porous silicon for stable, high performance electrochemical supercapacitors

    NASA Astrophysics Data System (ADS)

    Oakes, Landon; Westover, Andrew; Mares, Jeremy W.; Chatterjee, Shahana; Erwin, William R.; Bardhan, Rizia; Weiss, Sharon M.; Pint, Cary L.

    2013-10-01

    Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10-40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage.

  5. Surface engineered porous silicon for stable, high performance electrochemical supercapacitors.

    PubMed

    Oakes, Landon; Westover, Andrew; Mares, Jeremy W; Chatterjee, Shahana; Erwin, William R; Bardhan, Rizia; Weiss, Sharon M; Pint, Cary L

    2013-01-01

    Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10-40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage. PMID:24145684

  6. Grain boundary networks in high-performance, heteroepitaxial, YBCO films on polycrystalline, cube-textured metals

    SciTech Connect

    Goyal, Amit; Field, Dr. David; Held, R.; Mannhart, J.

    2011-01-01

    Grain boundaries (GBs) in high-temperature superconductors suppress the critical current density (Jc) dramatically [1-3]. The Jc drops exponentially when GB-misorientation exceeds 4 [3]. To reduce the number of high-angle GBs, fabrication of biaxially-textured, superconducting wires via epitaxial growth on cube-textured metals has been widely investigated [4-6]. Such wires have exhibited very high-Jc in applied magnetic fields despite having a majority of GBs with total misorientations greater than 4 . Here we show that GB networks in these wires have numerous GBs with out-of-plane misorientations > 4 and few boundaries having in-plane misorientations > 4 . The high performance can be explained if the Jc is determined primarily by in-plane misorientations. This supposition was confirmed by in-field transport measurements on artificially fabricated bicrystals of superconductors having only out-of-plane misorientations. Atomic resolution imaging of bicrystals with out-of-plane misorientations show that superconducting ab-planes are continuous across such GBs in contrast to GBs with in-plane misorientations.

  7. A microstrip silicon telescope for high performance particle tracking

    NASA Astrophysics Data System (ADS)

    Lietti, D.; Berra, A.; Prest, M.; Vallazza, E.

    2013-11-01

    Bent crystals are thin silicon/germanium devices that act as a bulk dipole magnet and thus are able to deflect relativistic charged particle beams with high efficiency (up to 98%). To study their behavior on extracted beamlines in terms of deflection capability and efficiency, a fast and high position resolution telescope is needed such as the INSULAB telescope. It consists in several modules equipped with double or single side silicon detectors readout by different ASICs. The Data Acquisition system is designed to work with pulsed beams minimizing the dead time to allow the collection of a large statistics in a short time. It is based on custom VME readout/memory boards for the data storage and 12 bit ADC custom boards for the signal digitization; the present maximum DAQ rate is 6 kHz. A detailed description of the detectors, the ASICs and the readout system together with the results obtained at the SPS H4 and PS T9 CERN beamlines in terms of spatial resolution and charge sharing are presented.

  8. Improvements in cast polycrystalline silicon PV manufacturing technology

    NASA Astrophysics Data System (ADS)

    Wohlgemuth, John H.

    1997-02-01

    The objectives of this NREL sponsored Photovoltaic Manufacturing Technology (PVMaT) Program are to advance Solarex's cast polycrystalline silicon manufacturing technology, reduce module production cost in half, increase module performance and expand Solarex's commercial production capacity by a factor of three. To meet these objectives Solarex has: 1) Modified the casting process and stations and is now casting larger ingots in production; 2) Developed wire saw technology to cut wafers with less kerf loss and has transferred this technology to production; 3) Developed a laboratory process to increase cell efficiencies using back surface fields, mechanical texturing and gettering; 4) Modified the casting, wires saw and cell processes in order to fabricate larger (15.2 cm by 15.2 cm) wafers and cells; 5) Improved the automated assembly of modules, reducing labor requirements and increasing throughput; and 6) Developed a frameless module with a lower cost backsheet and a simple, low cost electrical termination system. Solarex is now in the process of developing the equipment necessary for automated handling of thin 15.2 cm by 15.2 cm wafers and cells. This paper will discuss the efforts during the first two and a half years of the program.

  9. High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector

    PubMed Central

    Esmaeili-Rad, Mohammad R.; Salahuddin, Sayeef

    2013-01-01

    One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate a metal-semiconductor-metal heterojunction photodetector, made of MoS2 and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms. The transient response does not show persistent (residual) photoconductivity, unlike conventional a-Si devices where it may last 3–5 ms, thus making this heterojunction roughly 10X faster. A photoresponsivity of 210 mA/W is measured at green light, the wavelength used in commercial imaging systems, which is 2−4X larger than that of a-Si and best reported MoS2 devices. The device could find applications in large area electronics, such as biomedical imaging, where a fast response is critical. PMID:23907598

  10. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    NASA Astrophysics Data System (ADS)

    Torres Sevilla, G. A.; Almuslem, A. S.; Gumus, A.; Hussain, A. M.; Cruz, M. E.; Hussain, M. M.

    2016-02-01

    Thinned silicon based complementary metal oxide semiconductor (CMOS) electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOS inverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible silicon CMOS inverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  11. EPDM - Silicone blends - a high performance elastomeric composition for automotive applications

    SciTech Connect

    Mitchell, J.M.

    1987-01-01

    Styling and design changes have dramatically altered performance requirements for elastomers. High performance engines with electronic fuel injection have increased temperatures under the hood. Therefore, high performance elastomers are required to meet today's service conditions. New technology has been developed to compatibilize EPDM and silicone into high performance elastomeric compositions. These blends have physical, electrical and mechanical properties, for 175/sup 0/C service. Formulations are discussed for applications which require heat and weather resistance.

  12. Highly Doped Polycrystalline Silicon Microelectrodes Reduce Noise in Neuronal Recordings In Vivo

    PubMed Central

    Saha, Rajarshi; Jackson, Nathan; Patel, Chetan; Muthuswamy, Jit

    2013-01-01

    The aims of this study are to 1) experimentally validate for the first time the nonlinear current-potential characteristics of bulk doped polycrystalline silicon in the small amplitude voltage regimes (0–200 μV) and 2) test if noise amplitudes (0–15 μV) from single neuronal electrical recordings get selectively attenuated in doped polycrystalline silicon microelectrodes due to the above property. In highly doped polycrystalline silicon, bulk resistances of several hundred kilo-ohms were experimentally measured for voltages typical of noise amplitudes and 9–10 kΩ for voltages typical of neural signal amplitudes (>150–200 μV). Acute multiunit measurements and noise measurements were made in n = 6 and n = 8 anesthetized adult rats, respectively, using polycrystalline silicon and tungsten microelectrodes. There was no significant difference in the peak-to-peak amplitudes of action potentials recorded from either microelectrode (p > 0.10). However, noise power in the recordings from tungsten microelectrodes (26.36 ± 10.13 pW) was significantly higher (p < 0.001) than the corresponding value in polycrystalline silicon microelectrodes (7.49 ± 2.66 pW). We conclude that polycrystalline silicon microelectrodes result in selective attenuation of noise power in electrical recordings compared to tungsten microelectrodes. This reduction in noise compared to tungsten microelectrodes is likely due to the exponentially higher bulk resistances offered by highly doped bulk polycrystalline silicon in the range of voltages corresponding to noise in multiunit measurements. PMID:20667815

  13. The effect of heat treatment on the resistivity of polycrystalline silicon films

    NASA Technical Reports Server (NTRS)

    Fripp, A. L., Jr.

    1975-01-01

    The resistivity of doped polycrystalline silicon films has been studied as a function of post deposition heat treatments in an oxidizing atmosphere. It was found that a short oxidation cycle may produce a resistivity increase as large as three orders of magnitude in the polycrystalline films. The extent of change was dependent on the initial resistivity and the films' doping level and was independent of the total oxidation time.

  14. The effects of intragrain defects on the local photoresponse of polycrystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Inoue, N.; Wilmsen, C. W.; Jones, K. A.

    1981-02-01

    Intragrain defects in Wacker cast and Monsanto zone-refined polycrystalline silicon materials were investigated using the electron-beam-induced current (EBIC) technique. The EBIC response maps were compared with etch pit, local diffusion length and local photoresponse measurements. It was determined that the Wacker polycrystalline silicon has a much lower density of defects than does the Monsanto polycrystalline silicon and that most of the defects in the Wacker material are not active recombination sites. A correlation was found between the recombination site density, as determined by EBIC, and the local diffusion length. It is shown that a large density of intragrain recombination sites greatly reduces the minority carrier diffusion length and thus can significantly reduce the photoresponse of solar cells.

  15. Refractive index and extinction coefficient of doped polycrystalline silicon films in infrared spectrum

    NASA Astrophysics Data System (ADS)

    Zhang, Xia; Zhang, Dacheng

    2016-03-01

    The refractive index and extinction coefficient in infrared spectrum of the polycrystalline silicon films with different doped dosages, base on the inverse calculation, are obtained by means of utilizing the measured reflectance and transmittance of a layer of material and multilayer films, and the equations derived from photonics and electromagnetic theory. The calculation results demonstrate that the refractive index of the doped polycrystalline silicon films decreases with the doped dosages increasing and the extinction coefficient increases with the doped dosages increasing for a given wavelength. This method used for determining the refractive index and extinction coefficient of the polycrystalline silicon films is effective and has the advantage of that the measured samples are fabricated simply.

  16. Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

    SciTech Connect

    Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M.

    2013-05-27

    Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

  17. Self-heated silicon nanowires for high performance hydrogen gas detection.

    PubMed

    Ahn, Jae-Hyuk; Yun, Jeonghoon; Moon, Dong-Il; Choi, Yang-Kyu; Park, Inkyu

    2015-03-01

    Self-heated silicon nanowire sensors for high-performance, ultralow-power hydrogen detection have been developed. A top-down nanofabrication method based on well-established semiconductor manufacturing technology was utilized to fabricate silicon nanowires in wafer scale with high reproducibility and excellent compatibility with electronic readout circuits. Decoration of palladium nanoparticles onto the silicon nanowires enables sensitive and selective detection of hydrogen gas at room temperature. Self-heating of silicon nanowire sensors allows us to enhance response and recovery performances to hydrogen gas, and to reduce the influence of interfering gases such as water vapor and carbon monoxide. A short-pulsed heating during recovery was found to be effective for additional reduction of operation power as well as recovery characteristics. This self-heated silicon nanowire gas sensor will be suitable for ultralow-power applications such as mobile telecommunication devices and wireless sensing nodes. PMID:25670503

  18. Self-heated silicon nanowires for high performance hydrogen gas detection

    NASA Astrophysics Data System (ADS)

    Ahn, Jae-Hyuk; Yun, Jeonghoon; Moon, Dong-Il; Choi, Yang-Kyu; Park, Inkyu

    2015-03-01

    Self-heated silicon nanowire sensors for high-performance, ultralow-power hydrogen detection have been developed. A top-down nanofabrication method based on well-established semiconductor manufacturing technology was utilized to fabricate silicon nanowires in wafer scale with high reproducibility and excellent compatibility with electronic readout circuits. Decoration of palladium nanoparticles onto the silicon nanowires enables sensitive and selective detection of hydrogen gas at room temperature. Self-heating of silicon nanowire sensors allows us to enhance response and recovery performances to hydrogen gas, and to reduce the influence of interfering gases such as water vapor and carbon monoxide. A short-pulsed heating during recovery was found to be effective for additional reduction of operation power as well as recovery characteristics. This self-heated silicon nanowire gas sensor will be suitable for ultralow-power applications such as mobile telecommunication devices and wireless sensing nodes.

  19. Process Research On Polycrystalline Silicon Material (PROPSM). [flat plate solar array project

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1983-01-01

    The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

  20. Polycrystalline silicon material availability and market pricing outlook study for 1980 to 88: January 1983 update

    NASA Technical Reports Server (NTRS)

    Costogue, E.; Pellin, R.

    1983-01-01

    Photovoltaic solar cell arrays which convert solar energy into electrical energy can become a cost effective, alternative energy source provided that an adequate supply of low priced materials and automated fabrication techniques are available. Presently, silicon is the most promising cell material for achieving the near term cost goals of the Photovoltaics Program. Electronic grade silicon is produced primarily for the semiconductor industry with the photovoltaic industry using, in most cases, the production rejects of slightly lower grade material. Therefore, the future availability of adequate supplies of low cost silicon is one of the major concerns of the Photovoltaic Program. The supply outlook for silicon with emphasis on pricing is updated and is based primarily on an industry survey conducted by a JPL consultant. This survey included interviews with polycrystalline silicon manufacturers, a large cross section of silicon users and silicon solar cell manufacturers.

  1. A High-Performance Silicon Tracker for the CBM Experiment at FAIR

    SciTech Connect

    Heuser, Johann M.; Mueller, Walter F. J.; Senger, Peter; Muentz, Christian; Stroth, Joachim

    2006-07-11

    The Compressed Baryonic Matter (CBM) experiment at GSI's future international Facility for Antiproton and Ion Research (FAIR) will study strongly interacting matter at high baryon densities. The central component of the fixed-target heavy-ion spectrometer is a high-performance silicon vertex tracker. It applies most advanced pixel and microstrip detectors to track exclusively the charged particles created in the collisions and to reconstruct decay vertices from 'open charm'. The development of the silicon tracker is challenging and includes R and D on ultra low-mass sensors and support structures, extreme radiation hardness, and fast self-triggered readout.

  2. The properties of polycrystalline silicon solar cells with controlled titanium additions

    NASA Technical Reports Server (NTRS)

    Rohatgi, A.; Hopkins, R. H.; Davis, J. R., Jr.

    1981-01-01

    By coupling the results of electrical measurements, such as spectral response, lighted and dark I-V determinations, and deep-level-transient spectroscopy with optical and laser scan photomicroscopy, the effects of grain boundaries and impurities on silicon solar cells were evaluated. Titanium, which produces two deep levels in silicon, degrades cell performance by reducing bulk lifetime and thus cell short-circuit current. Electrically active grain boundaries induce carrier recombination in the bulk and depletion regions of the solar cell. Experimental data imply a small but measurable segregation of titanium into some grain boundaries of the polycrystalline silicon containing high Ti concentration. However, for the titanium-contaminated polycrystalline material used in this study, solar cell performance is dominated by the electrically active titanium concentration in the grains. Microstructural impacts on the devices are of secondary importance

  3. Investigation of lifetime limiting microdefects in polycrystalline silicon for photovoltaic applications

    SciTech Connect

    Werner, M.; Weber, E.R.; McHugo, S.; Bailey, J.

    1994-12-31

    Electron Microscopy techniques were applied to the study of intragranular microdefects in as-grown and intentionally Fe contaminated polycrystalline silicon solar cell material. Electron-Energy-Loss Spectroscopy (EELS) imaging revealed bright contrasts in metal diffused samples and with smaller concentration in as-grown material, probably due to metal precipitates. High-resolution and analytical electron microscopy identified Cu- and Fe-silicide particles in the contaminated specimen. These results demonstrate that intragranular microdefects exist in polycrystalline Si which act as nucleation sites for metal contaminants and lend support to the model that metal-decorated microdefects are decisive lifetime killers in as-grown material.

  4. Polycrystalline Silicon Sheets for Solar Cells by the Improved Spinning Method

    NASA Technical Reports Server (NTRS)

    Maeda, Y.; Yokoyama, T.; Hide, I.

    1984-01-01

    Cost reduction of silicon materials in the photovoltaic program of materials was examined. The current process of producing silicon sheets is based entirely on the conventional Czochralski ingot growth and wafering used in the semiconductor industry. The current technology cannot meet the cost reduction demands for producing low cost silicon sheets. Alternative sheet production processes such as unconventional crystallization are needed. The production of polycrystalline silicon sheets by unconventional ingot technology is the casting technique. Though large grain sheets were obtained by this technique, silicon ribbon growth overcomes deficiencies of the casting process by obtaining the sheet directly from the melt. The need to solve difficulties of growth stability and impurity effects are examined. The direct formation process of polycrystalline silicon sheets with large grain size, smooth surface, and sharp edges from the melt with a high growth rate which will yield low cost silicon sheets for solar cells and the photovoltaic characteristics associated with this type of sheet to include an EBIC study of the grain boundaries are described.

  5. Development of transparent polycrystalline beta-silicon carbide

    NASA Astrophysics Data System (ADS)

    Bayya, Shyam S.; Villalobos, Guillermo R.; Hunt, Michael P.; Sanghera, Jasbinder S.; Sadowski, Bryan M.; Aggarwal, Ishwar D.; Cinibulk, Michael; Carney, Carmen; Keller, Kristin

    2013-09-01

    Transparent beta-SiC is of great interest because its high strength, low coefficient of thermal expansion, very high thermal conductivity, and cubic crystal structure give it a very high thermal shock resistance. A transparent, polycrystalline beta-SiC window will find applications in armor, hypersonic missiles, and thermal control for thin disc lasers. SiC is currently available as either small transparent vapor grown disks or larger opaque shapes. Neither of which are useful in window applications. We are developing sintering technology to enable transparent SiC ceramics. This involves developing procedures to make high purity powders and studying their densification behavior. We have been successful in demonstrating transparency in thin sections using Field Assisted Sintering Technology (FAST). This paper will discuss the reaction mechanisms in the formation of beta-SiC powder and its sintering behavior in producing transparent ceramics.

  6. Defect engineering by ultrasound treatment in polycrystalline silicon

    SciTech Connect

    Ostapenko, S.; Jastrzebski, L.

    1995-08-01

    By applying ultrasound treatment (UST) to bulk and thin film polycrystalline Si (poly-Si) we have found a dramatic improvement of recombination and transport properties. The increasing of minority carrier lifetime by as much as one order of magnitude was found in short diffusion length regions, while exhibiting a strong dispersion for entire solar-grade poly-Si wafer. Relevant mechanisms are attributed to ultrasound processing on crystallographic defects, as well as UST stimulated dissociation of Fe-B pairs followed by Fe{sub i} gettering. A spectacular improvement of hydrogenation efficiency in poly-Si thin-films on glass substrate is demonstrated by resistivity study and confirmed using spatially resolved photoluminescence and nanoscale contact potential difference mapping. By applying UST to commercial solar cells we found the increasing of cell efficiency at low light excitation.

  7. Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

    DOEpatents

    Kaschmitter, James L.; Sigmon, Thomas W.

    1995-01-01

    A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby to amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenization can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

  8. Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Annual subcontract report, January 1, 1995--December 31, 1995

    SciTech Connect

    Wohlgemuth, J

    1996-06-01

    The objective of this three-year program is to advance Solarex`s cast polycrystalline silicon manufacturing technology, reduce module production cost, increase module performance and expand Solarex`s commercial production capacities. Two specific objectives of this program are to reduce the manufacturing cost for polycrystalline silicon PV modules to less than $1.20/watt and to increase the manufacturing capacity by a factor of three.

  9. Formation of polycrystalline-silicon films with hemispherical grains for capacitor structures with increased capacitance

    SciTech Connect

    Novak, A. V.

    2014-12-15

    The effect of formation conditions on the morphology of silicon films with hemispherical grains (HSG-Si) obtained by the method of low-pressure chemical vapor deposition (LPCVD) is investigated by atomic-force microscopy. The formation conditions for HSG-Si films with a large surface area are found. The obtained HSG-Si films make it possible to fabricate capacitor structures, the electric capacitance of which is twice as large in comparison to that of capacitors with “smooth” electrodes from polycrystalline silicon.

  10. Nano silver-catalyzed chemical etching of polycrystalline silicon wafer for solar cell application

    NASA Astrophysics Data System (ADS)

    Chen, S. R.; Liang, Z. C.; Wang, D. L.

    2016-03-01

    Silver nanoparticles were deposited on the surface of polycrystalline silicon wafer via vacuum thermal evaporation and metal-catalyzed chemical etching (MCCE) was conducted in a HF-H2O2 etching system. Treatment of the etched silicon wafer with HF transformed the textured structure on the surface from nanorods into nanocones. An etching time of 30 s and treatment with HF resulted in nanocones with uniform size distribution and a reflectivity as low as 1.98% across a spectral range from 300 to 1000 nm.

  11. Polycrystalline silicon thin-film solar cell prepared by the solid phase crystallization (SPC) method

    SciTech Connect

    Baba, T.; Matsuyama, T.; Sawada, T.; Takahama, T.; Wakisaka, K.; Tsuda, S.; Nakano, S.

    1994-12-31

    A solid phase crystallization (SPC) method was applied to the fabrication of thin-film polycrystalline silicon (poly-Si) for solar cells for the first time. Among crystalline silicon solar cells crystallized at a low temperature of less than 600 C, the world`s highest conversion efficiency of 8.5% was achieved in a solar cell using thin-film poly-Si with only 10 {micro}m thickness prepared by the SPC method. This solar cell showed high photosensitivity in the long-wavelength region of more than 800 nm and also exhibited no light-induced degradation after light exposure.

  12. The determination of minority carrier lifetime in polycrystalline silicon by the photoconductivity decay method

    NASA Astrophysics Data System (ADS)

    Singh, S. N.; Kishore, R.; Arora, N. K.

    1985-04-01

    Experiments were carried out to investigate the possible sources of error in estimates of the time constant of apparent minority carrier lifetime (tau-asterisk) in polycrystalline silicon. Tau-asterisk was measured in both single-crystal and polycrystalline silicon rods as a function of: (1) the intensity of background illumination; and (2) the temperature of the specimens. The background illumination source for the experiments was a tungsten-halogen lamp which operated in the intensity range 0-85 mW per sq cm. The temperatures of the specimens under illumination were in the range 25-140 C. The experimental results were explained on the basis of a theoretical analysis. It is shown that the photoconductivity of the specimens was generally dependent on the minority carrier mobility lifetime, as long as potential barriers were present at the grain boundaries of the specimens. On the basis of the theoretical analysis, it is concluded that the absence of potential barriers at the grain boundaries in polycrystalline silicon is a major source of error in estimates of minority carrier mobility lifetime. The apparent minority carrier mobility decay curves are reproduced in graphic form.

  13. A scalable silicon photonic chip-scale optical switch for high performance computing systems.

    PubMed

    Yu, Runxiang; Cheung, Stanley; Li, Yuliang; Okamoto, Katsunari; Proietti, Roberto; Yin, Yawei; Yoo, S J B

    2013-12-30

    This paper discusses the architecture and provides performance studies of a silicon photonic chip-scale optical switch for scalable interconnect network in high performance computing systems. The proposed switch exploits optical wavelength parallelism and wavelength routing characteristics of an Arrayed Waveguide Grating Router (AWGR) to allow contention resolution in the wavelength domain. Simulation results from a cycle-accurate network simulator indicate that, even with only two transmitter/receiver pairs per node, the switch exhibits lower end-to-end latency and higher throughput at high (>90%) input loads compared with electronic switches. On the device integration level, we propose to integrate all the components (ring modulators, photodetectors and AWGR) on a CMOS-compatible silicon photonic platform to ensure a compact, energy efficient and cost-effective device. We successfully demonstrate proof-of-concept routing functions on an 8 × 8 prototype fabricated using foundry services provided by OpSIS-IME. PMID:24514859

  14. Chemical mechanical polishing of boron-doped polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    Pirayesh, Hamidreza; Cadien, Kenneth

    2014-03-01

    Chemical mechanical polishing (CMP) is a technique which helps to print a smaller depth of focus and smoother surface in micro fabrication industry. In this project, boron doped polysilicon is used as a fill material for Through Silicon Vias (TSV) creating a 3D package. It is shown that the presence of boron as dopant suppresses the polysilicon polish rate. To increase the polish rate, understanding the mechanism of polish rate retardation is essential. We believe that the electrical effects play the major role in this phenomenon and by reducing this effect we are able to increase the polish rate.

  15. Silicon photonics-based laser system for high performance fiber sensing

    NASA Astrophysics Data System (ADS)

    Ayotte, S.; Faucher, D.; Babin, A.; Costin, F.; Latrasse, C.; Poulin, M.; G.-Deschênes, É.; Pelletier, F.; Laliberté, M.

    2015-09-01

    We present a compact four-laser source based on low-noise, high-bandwidth Pound-Drever-Hall method and optical phase-locked loops for sensing narrow spectral features. Four semiconductor external cavity lasers in butterfly packages are mounted on a shared electronics control board and all other optical functions are integrated on a single silicon photonics chip. This high performance source is compact, automated, robust, operates over a wide temperature range and remains locked for days. A laser to resonance frequency noise of 0.25 Hz/rt-Hz is demonstrated.

  16. High-performance conformal sensors employing single-crystal silicon nanomembranes

    NASA Astrophysics Data System (ADS)

    Xu, Xiaochuan; Subbaraman, Harish; Chakravarty, Swapnajit; Chen, Ray T.

    2014-03-01

    We demonstrate light-weight, conformal, and high-performance flexible sensors fabricated on a large area (>2 cm × 2 cm) silicon nanomembrane transferred onto a flexible substrate. Linear L13 photonic crystal microcavities are designed to provide high quality factors on the flexible platform. Subwavelength grating (SWG) couplers are employed in order to enable efficient light coupling to the device using a single mode fiber. Photonic crystal tapers are implemented at the strip-photonic crystal waveguide interfaces to minimize loss. Preliminary chemical sensing data suggests a sensitivity of 75nm/RIU. Bending tests are further performed in order to demonstrate sensitivityindependent operation.

  17. Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Metaferia, Wondwosen; Sun, Yan-Ting; Pietralunga, Silvia M.; Zani, Maurizio; Tagliaferri, Alberto; Lourdudoss, Sebastian

    2014-07-01

    Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. It is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III-V semiconductor layers on low cost and flexible substrates for solar cell applications.

  18. Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

    SciTech Connect

    Metaferia, Wondwosen; Sun, Yan-Ting Lourdudoss, Sebastian; Pietralunga, Silvia M.; Zani, Maurizio; Tagliaferri, Alberto

    2014-07-21

    Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. It is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III–V semiconductor layers on low cost and flexible substrates for solar cell applications.

  19. Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Rauh, R. D.

    1980-07-01

    Plating experiments with SiHCl3 solutions in propylene carbonate with 0.1 M tetrabutylammonium tetrafluoroborate are described. Silicon was deposited on ITO glass (Nesatron) as well as Mo substrates at temperatures from 25-80 C. Both potentiostatic and galvanostatic conditions were used. The high resistance of the films limited the thickness which could be deposited by either method to less than 5 micrometers. Deposition beyond this limit resulted in a deterioration of the film quality. X-ray analysis of the films confirmed that they were amorphous. SEM analysis of the films revealed a very porous structure with nodules about 1 micrometer in diameter. Annealing the deposit at 400 C in an Ar:H2 atmosphere resulted in a slightly smoother surface but the nodules remained. The films deposited on ITO glass had a band gap of about 1.0 eV and an EO4 value of 1.5-2.0 eV. The Auger analysis of the films showed the presence of large amounts of oxygen in the samples that had been exposed to air.

  20. Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates.

    PubMed

    Chen, Jianyi; Wen, Yugeng; Guo, Yunlong; Wu, Bin; Huang, Liping; Xue, Yunzhou; Geng, Dechao; Wang, Dong; Yu, Gui; Liu, Yunqi

    2011-11-01

    We report the metal-catalyst-free synthesis of high-quality polycrystalline graphene on dielectric substrates [silicon dioxide (SiO(2)) or quartz] using an oxygen-aided chemical vapor deposition (CVD) process. The growth was carried out using a CVD system at atmospheric pressure. After high-temperature activation of the growth substrates in air, high-quality polycrystalline graphene is subsequently grown on SiO(2) by utilizing the oxygen-based nucleation sites. The growth mechanism is analogous to that of growth for single-walled carbon nanotubes. Graphene-modified SiO(2) substrates can be directly used in transparent conducting films and field-effect devices. The carrier mobilities are about 531 cm(2) V(-1) s(-1) in air and 472 cm(2) V(-1) s(-1) in N(2), which are close to that of metal-catalyzed polycrystalline graphene. The method avoids the need for either a metal catalyst or a complicated and skilled postgrowth transfer process and is compatible with current silicon processing techniques. PMID:21988639

  1. MIS and PN junction solar cells on thin-film polycrystalline silicon

    SciTech Connect

    Ariotedjo, A.; Emery, K.; Cheek, G.; Pierce, P.; Surek, T.

    1981-05-01

    The Photovoltaic Advanced Silicon (PVAS) Branch at the Solar Energy Research Institute (SERI) has initiated a comparative study to assess the potential of MIS-type solar cells for low-cost terrestrial photovoltaic systems in terms of performance, stability, and cost-effectiveness. Several types of MIS and SIS solar cells are included in the matrix study currently underway. This approach compares the results of MIS and p/n junction solar cells on essentially identical thin-film polycrystalline silicon materials. All cell measurements and characterizations are performed using uniform testing procedures developed in the Photovoltaic Measurements and Evaluation (PV M and E) Laboratory at SERI. Some preliminary data on the different cell structures on thin-film epitaxial silicon on metallurgical-grade substrates are presented here.

  2. CW Laser Annealing of Polycrystalline Silicon on SiO2 and Effects of Successive Furnace Annealing

    NASA Astrophysics Data System (ADS)

    Kugimiya, Koichi; Fuse, Genshu; Inoue, Kaoru

    1982-01-01

    CW Ar laser annealing was carried out to reduce the resistivity of polycrystalline silicon implanted with light doses of 1× 1012-5× 1014B+/cm2. Laser annealing, actually laser melting, and successive furnace annealing effectively reduced the resistivity to almost that of single crystal silicon. TEM, OM and stress observations revealed that the reduction was due primarily to the grain growth of polycrystalline silicon and secondarily to stress relief, from 9× 109 dyne/cm2 to 5× 109 dyne/cm2, caused by annealing. Grain growth of up to about 3× 100 μm and bamboo-joint-like growth were observed.

  3. New silicon technologies enable high-performance arrays of Single Photon Avalanche Diodes

    PubMed Central

    Gulinatti, Angelo; Rech, Ivan; Maccagnani, Piera; Cova, Sergio; Ghioni, Massimo

    2013-01-01

    In order to fulfill the requirements of many applications, we recently developed a new technology aimed at combining the advantages of traditional thin and thick silicon Single Photon Avalanche Diodes (SPAD). In particular we demonstrated single-pixel detectors with a remarkable improvement in the Photon Detection Efficiency at the longer wavelengths (e.g. 40% at 800nm) while maintaining a timing jitter better than 100ps. In this paper we will analyze the factors the currently prevent the fabrication of arrays of SPADs by adopting such a Red-Enhanced (RE) technology and we will propose further modifications to the device structure that will enable the fabrication of high performance RE-SPAD arrays for photon timing applications. PMID:24353395

  4. High-performing nonlinear visualization of terahertz radiation on a silicon charge-coupled device

    PubMed Central

    Shalaby, Mostafa; Vicario, Carlo; Hauri, Christoph P.

    2015-01-01

    Photoinduced electron transitions can lead to significant changes of the macroscopic electronic properties in semiconductors. This principle is responsible for the detection of light with charge-coupled devices. Their spectral sensitivity is limited by the semiconductor bandgap which has restricted their visualization capabilities to the optical, ultraviolet, and X-ray regimes. The absence of an imaging device in the low frequency terahertz range has severely hampered the advance of terahertz imaging applications in the past. Here we introduce a high-performing imaging concept to the terahertz range. On the basis of a silicon charge-coupled device we visualize 5–13 THz radiation with photon energy under 2% of the sensor's band-gap energy. The unprecedented small pitch and large number of pixels allow the visualization of complex terahertz radiation patterns in real time and with high spatial detail. This advance will have a great impact on a wide range of terahertz imaging disciplines. PMID:26496973

  5. Design, development and tests of high-performance silicon vapor chamber

    NASA Astrophysics Data System (ADS)

    Cai, Qingjun; Chen, Bing-chung; Tsai, Chialun

    2012-03-01

    This paper presents a novel triple stack process to develop an all-silicon thermal ground plane (TGP) vapor chamber that enables fabrication of compact, large scale, low thermal expansion coefficient mismatch and high-performance heat transfer devices. The TGP vapor chamber is formed through bonding three etched silicon wafers. On both the top and bottom wafers, microscale and high aspect ratio wick structures are etched for liquid transport. The 1.5 mm thick middle layer contains the cavities for vapor flow. To achieve hermetic seal, glass frit with four sealing rings, approximately 300 µm wide and 30 µm thick, is used to bond the edges and supporting posts. For experimental evaluations, 3 mm × 38 mm × 38 mm TGP vapor chambers are developed. The volume density of the heat transfer device is approximately 1.5 × 103 kg m-3. Measurement of mass loss and stability studies of heat transfer indicates that the vapor chamber system is hermetically sealed. Using ethanol as the operating liquid, high heat transfer performance is demonstrated. Effective thermal conductivity reaches over 2500 W m-1 ṡ K-1. Under high g environment, experimental results show good liquid transport capabilities of the wick structures.

  6. Efficient organic light-emitting diodes using polycrystalline silicon thin films as semitransparent anode

    NASA Astrophysics Data System (ADS)

    Zhu, X. L.; Sun, J. X.; Peng, H. J.; Meng, Z. G.; Wong, M.; Kwok, H. S.

    2005-08-01

    Polycrystalline silicon (p-Si) is a good material for the construction of thin-film transistors (TFT). It is used for fabricating active-matrix organic light-emitting diode (AMOLED) displays. In this letter, we propose and demonstrate the application of boron-doped p-Si as a semi-transparent anode in making different color OLEDs. Without removing the ultrathin native oxide on the p-Si surface and employing p-doped hole transport layer to enhance holes injection, these OLEDs show comparable or even better performance to conventional OLEDs which use ITO as anodes. The present technique has the advantage of less masking steps in making AMOLED.

  7. Imaging of a Polycrystalline Silicon Solar Cell Using a Laser Terahertz Emission Microscope

    NASA Astrophysics Data System (ADS)

    Nakanishi, Hidetoshi; Fujiwara, Shogo; Takayama, Kazuhisa; Kawayama, Iwao; Murakami, Hironaru; Tonouchi, Masayoshi

    2012-11-01

    We employed a laser terahertz (THz) emission microscope (LTEM) as a novel tool for evaluating solar cells. LTEM images are obtained by exciting a polycrystalline silicon solar cell with femtosecond laser illumination and visualizing the local distribution of the optical response. THz emission signals also provide various types of information, such as the screening effect of the built-in electrical field near pn junctions. These results indicate that this technique can be used to evaluate the local photoelectric conversion efficiency distribution and dynamic behavior of optically excited carriers in solar cells.

  8. Chromatographic performance of synthetic polycrystalline diamond as a stationary phase in normal phase high performance liquid chromatography.

    PubMed

    Peristyy, Anton; Paull, Brett; Nesterenko, Pavel N

    2015-04-24

    The chromatographic properties of high pressure high temperature synthesised diamond (HPHT) are investigated in normal phase mode of high performance liquid chromatography. Purified nonporous irregular shape particles of average particles size 1.2 μm and specific surface area 5.1 m(2) g(-1) were used for packing 100×4.6 mm ID or 50×4.6 mm ID stainless steel columns. The retention behaviour of several classes of compounds including alkyl benzenes, polyaromatic hydrocarbons (PAH), alkylphenylketones, phenols, aromatic acids and bases were studied using n-hexane-2-propanol mixtures as mobile phase. The results are compared with those observed for microdispersed sintered detonation nanodiamond (MSDN) and porous graphitic carbon (PGC). HPHT diamond revealed distinctive separation selectivity, which is orthogonal to that observed for porous graphitic carbon; while selectivities of HPHT diamond and microdispersed sintered detonation nanodiamonds are similar. Owing to non-porous particle nature, columns packed with high pressure high temperature diamond exhibited excellent mass transfer and produce separations with maximum column efficiency of 128,200 theoretical plates per meter. PMID:25777051

  9. Systematic process development towards high performance transferred thin silicon solar cells based on epitaxially grown absorbers

    NASA Astrophysics Data System (ADS)

    Murcia Salazar, Clara Paola

    The value of thin crystalline silicon (c-Si) solar cells is the potential for higher performance compared to conventional wafer approaches. Thin silicon solar cells can outperform thick cells with the same material properties because the smaller active volume causes a reduced bulk recombination leading to higher voltages while efficient light trapping structures ensure all photons are absorbed. Efficiencies above 20+% can be achieved with less than 20um of c-Si with current silicon solar cell processing technologies. In a thin solar cell, factors that will lead to high efficiency include high minority carrier lifetime, low surface recombination, and good optical confinement. Independently optimizing surface optical and electrical properties in a thin solar cell can achieve this higher performance. In addition, re-utilizing a c-Si wafer with a process that allows optimization of both surfaces is a path to higher performance at lower cost. The challenge in the fabrication of this high performance concept is to separately analyze critical parameters through fabrication and transfer and establish the design rules for high performance. This work contributes to the design and systematic fabrication approach of a 20 mum thick epitaxial silicon solar cell. State-of-the-art thin absorbers of less than 30um have reported 655mV (on a textured front surface with antireflection coating), and efficiencies near 17%. We report near 640mV (on a planar front surface with antireflection coating) for 20 mum thick absorbers. It is found that previously reported efficiencies are tightly related to solar cell's active thickness. In the case of transferred solar cells, the thinnest epitaxial transferred cell reported is near 24 mum thick with an efficiency of 15.4% (transparent front handle, textured with ARC and metallic back reflector). Recently, a c-Si transferred solar cell of 43 mum has reported 19.1% efficiency (with a front texture and ARC with localized back contact and reflector

  10. Investigation of diffusion length distribution on polycrystalline silicon wafers via photoluminescence methods.

    PubMed

    Lou, Shishu; Zhu, Huishi; Hu, Shaoxu; Zhao, Chunhua; Han, Peide

    2015-01-01

    Characterization of the diffusion length of solar cells in space has been widely studied using various methods, but few studies have focused on a fast, simple way to obtain the quantified diffusion length distribution on a silicon wafer. In this work, we present two different facile methods of doing this by fitting photoluminescence images taken in two different wavelength ranges or from different sides. These methods, which are based on measuring the ratio of two photoluminescence images, yield absolute values of the diffusion length and are less sensitive to the inhomogeneity of the incident laser beam. A theoretical simulation and experimental demonstration of this method are presented. The diffusion length distributions on a polycrystalline silicon wafer obtained by the two methods show good agreement. PMID:26364565

  11. Investigation of diffusion length distribution on polycrystalline silicon wafers via photoluminescence methods

    PubMed Central

    Lou, Shishu; Zhu, Huishi; Hu, Shaoxu; Zhao, Chunhua; Han, Peide

    2015-01-01

    Characterization of the diffusion length of solar cells in space has been widely studied using various methods, but few studies have focused on a fast, simple way to obtain the quantified diffusion length distribution on a silicon wafer. In this work, we present two different facile methods of doing this by fitting photoluminescence images taken in two different wavelength ranges or from different sides. These methods, which are based on measuring the ratio of two photoluminescence images, yield absolute values of the diffusion length and are less sensitive to the inhomogeneity of the incident laser beam. A theoretical simulation and experimental demonstration of this method are presented. The diffusion length distributions on a polycrystalline silicon wafer obtained by the two methods show good agreement. PMID:26364565

  12. Field-induced transition in the conductivity mechanism of polycrystalline silicon films

    NASA Astrophysics Data System (ADS)

    Ada-Hanifi, M.; Sicart, J.; Dusseau, J. M.; Robert, J. L.

    1988-04-01

    Current-voltage characteristics of polycrystalline silicon films highly doped with phosphorus and boron were studied over a wide range of temperatures (40-300 K) and applied electric fields (up to 5 kV cm-1). After the usual ohmic regime, we observed a large increase in dc current versus applied voltage. Moreover, at higher electric fields, a new ohmic conduction regime appeared which has not yet been reported in polycrystalline silicon. Thermoemission-based models cannot fully interpret our results. We present a new interpretation of current-voltage characteristics based on a model previously used to interpret the electrical properties of these films at low electric fields. This model takes into account the existence of fluctuations both in intergranular potential and in the grain boundary barrier heights. They result from all of the macroscopic inhomogeneities due to the growth conditions of the material. The high electric field detraps carriers from grain boundaries and extracts the carriers located in the valleys of potential created by the fluctuations, thus inducing transition in conductivity.

  13. Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Semiannual subcontract report, January 1--June 30, 1995

    SciTech Connect

    Wohlgemuth, J.

    1996-02-01

    The objective of this three-year program is to advance Solarex`s cast polycrystalline silicon manufacturing technology, reduce module production cost, increase module performance and expand Solarex`s commercial production capacities. Two specific objectives of this program are to reduce the manufacturing cost for polycrystalline silicon PV modules to less than $1.20/watt and to increase the manufacturing capacity by a factor of three. To achieve these objectives, Solarex is working in the following technical areas: casting, wire saws, cell process, module assembly, frameless module development, and automated cell handling. Accomplishments reported include: Cast first successful larger ingot producing 73% larger volume of usable Si; Increased the size of the ingot even further and cast an ingot yielding nine 11.4 {times} 11.4 cm bricks, representing a 125% increase in usable Si from a single casting; Operated the wire-saw in a semi-operational mode, producing 459,000 wafers at 94.1% overall yield; Reduced the cost of wire-saw consumables, spare parts, and waste disposal; Developed a cost-effective back surface field process that increases cell efficiency by 5% and began production trials; Developed a plan for increasing the capacity in the module assembly area; Completed qualification testing of modules built using Spire`s automated tabbing and stringing machine; Selected, tested, and qualified a low-cost electrical termination system; Completed long-term UV testing of experimental back sheets; Qualified the structure and adhesive-tape system for mounting frameless modules; and ARRI completed a study of the fracture properties of cast polycrystalline Si wafers and provided the information necessary to calculate the maximum stresses allowable during wafer handling.

  14. Uncooled amorphous silicon IRFPA for high performance and high volume applications

    NASA Astrophysics Data System (ADS)

    Pochic, D.; Durand, A.; Tissot, J. L.; Crastes, A.; Vilain, M.; Legras, O.; Tinnes, S.; Minassian, C.; Robert, P.

    2009-09-01

    For more than 10 years now, uncooled sensors have given new opportunities in the IR field of applications by being able to be produce in large volume. Compared to cooled technology, uncooled detectors offer many interesting advantages: high reliability, lower cost ... whereas the performance is high enough for a lot of applications. Thermography, building inspection, enhanced driver vision and military (thermal weapon sight, low altitude UAV sensor) are applications which can be provided with affordable IR focal plane arrays... As uncooled IR sensors are mainly dedicated to these high volume applications, any uncooled IRFPA technology has to be able to provide high performance sensors but also to be producible in large volume at a minimum cost. The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon layer enables ULIS to develop a full range of IRFPA formats from 160x120 to 1024x768 pixels with 25μm and 17μm pixel-pitch, designed for high end and high volume applications. The detector ROIC designs rely on a simple architecture (detector configuration addressed by a serial link for user defined amplifier gain, windowing capability...) which enables easier systems upgrade and therefore a reduced system development non recurrent cost. The packaging technique depends on the application environment and the production volume in order to fit with the market expectation. Starting from metallic and ceramics package, very advanced new technique is under development in order to reduce uncooled IRFPA production cost. NETD in the range of 30mK (f/1, 300K, 60Hz) as well as operability higher than 99.99%, are routinely achieved with amorphous silicon technology.

  15. High performance radial p-n junction solar cell based on silicon nanopillar array with enhanced decoupling mechanism

    NASA Astrophysics Data System (ADS)

    Dou, Bingfei; Jia, Rui; Li, Haofeng; Chen, Chen; Ding, Wuchang; Meng, Yanlong; Xing, Zhao; Liu, Xinyu; Ye, Tianchun

    2012-10-01

    High performance radial p-n junction solar cells based on silicon nanopillar array were synthesized from p-type silicon substrates and compared with planar cell. These radial p-n junction cells exhibited considerable higher short-circuit current, due to their unique carriers' decoupling mechanism. After the electrode enhancement via light induced plating, a best efficiency of near 12% was achieved for radial p-n junction solar cell, which is better than the planar control cell.

  16. Polycrystalline silicon thin-film solar cells with plasmonic-enhanced light-trapping.

    PubMed

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-01-01

    One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm(2), which can be increased up to 17-18 mA/cm(2) (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing

  17. Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing

    PubMed Central

    Troia, Benedetto; Khokhar, Ali Z.; Nedeljkovic, Milos; Reynolds, Scott A.; Hu, Youfang; Mashanovich, Goran Z.; Passaro, Vittorio M. N.

    2015-01-01

    In this paper, we propose a generalized procedure for the design of integrated Vernier devices for high performance chemical and biochemical sensing. In particular, we demonstrate the accurate control of the most critical design and fabrication parameters of silicon-on-insulator cascade-coupled racetrack resonators operating in the second regime of the Vernier effect, around 1.55 μm. The experimental implementation of our design strategies has allowed a rigorous and reliable investigation of the influence of racetrack resonator and directional coupler dimensions as well as of waveguide process variability on the operation of Vernier devices. Figures of merit of our Vernier architectures have been measured experimentally, evidencing a high reproducibility and a very good agreement with the theoretical predictions, as also confirmed by relative errors even lower than 1%. Finally, a Vernier gain as high as 30.3, average insertion loss of 2.1 dB and extinction ratio up to 30 dB have been achieved. PMID:26067193

  18. Hierarchical micro & mesoporous silicon carbide flakes for high-performance electrochemical capacitive energy storage

    NASA Astrophysics Data System (ADS)

    Kim, Myeongjin; Oh, Ilgeun; Kim, Jooheon

    2016-03-01

    Hierarchical micro/mesoporous silicon carbide flakes (SiCF) with a high surface area of about 1376 m2 g-1 are obtained by one-step carbonization of waste Si wafer without any chemical or physical activation. The micropores are derived from the partial evaporation of Si atoms during the carbonization process and mesopores are formed by the integration of neighboring micropores. During carbonization process, the proportion of micro and mesopores in SiCF can be controlled by carbonization time by controlling the amount of partial evaporation of Si atoms. The SiCF electrode carbonized for 8 h at 1250 °C exhibits high charge storage capacity with a specific capacitance of 203.7 F g-1 at a scan rate of 5 mV s-1 with 87.3% rate performance from 5 to 500 mV s-1 in 1 M KCl aqueous electrolyte. The outstanding electrochemical performance can be the synergistic effect of both enhanced electric double layer properties caused by micropores and reduced resistant pathways for ions diffusion in the pores as well as a large accessible surface area for ion transport/charge storage caused by mesopores. These encouraging results demonstrate that the SiCF carbonized for 8 h at 1250 °C can be promising candidate for high performance electrode materials for supercapacitors.

  19. Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing.

    PubMed

    Troia, Benedetto; Khokhar, Ali Z; Nedeljkovic, Milos; Reynolds, Scott A; Hu, Youfang; Mashanovich, Goran Z; Passaro, Vittorio M N

    2015-01-01

    In this paper, we propose a generalized procedure for the design of integrated Vernier devices for high performance chemical and biochemical sensing. In particular, we demonstrate the accurate control of the most critical design and fabrication parameters of silicon-on-insulator cascade-coupled racetrack resonators operating in the second regime of the Vernier effect, around 1.55 μm. The experimental implementation of our design strategies has allowed a rigorous and reliable investigation of the influence of racetrack resonator and directional coupler dimensions as well as of waveguide process variability on the operation of Vernier devices. Figures of merit of our Vernier architectures have been measured experimentally, evidencing a high reproducibility and a very good agreement with the theoretical predictions, as also confirmed by relative errors even lower than 1%. Finally, a Vernier gain as high as 30.3, average insertion loss of 2.1 dB and extinction ratio up to 30 dB have been achieved. PMID:26067193

  20. The effect of grain boundaries on the resistivity of polycrystalline silicon. Ph.D. Thesis - Va. Univ.

    NASA Technical Reports Server (NTRS)

    Fripp, A. L., Jr.

    1974-01-01

    The electrical resistivity of polycrystalline silicon films was investigated. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity was found to be independent of dopant atom concentration in the lightly doped regions but was a strong function of dopant levels in the more heavily doped regions. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

  1. Cast polycrystalline silicon photovoltaic cell and module manufacturing technology improvements. Annual subcontract report, 1 December 1993--30 November 1994

    SciTech Connect

    Wohlgemuth, J.

    1995-09-01

    This report describes work performed under a 3-y contract to advance Solarex`s cast polycrystalline silicon manufacturing technology, reduce module production cost, increase module performance, and expand Solarex`s commercial production capacities. Specific objectives are to reduce manufacturing cost for polycrstalline silicon PV modules to less than $1.20/W and to increase manufacturing capacity by a factor of 3. Solarex is working on casting, wire saws, cell process, module assembly, frameless module development, and automated cell handling.

  2. Valley-engineered ultra-thin silicon for high-performance junctionless transistors.

    PubMed

    Kim, Seung-Yoon; Choi, Sung-Yool; Hwang, Wan Sik; Cho, Byung Jin

    2016-01-01

    Extremely thin silicon show good mechanical flexibility because of their 2-D like structure and enhanced performance by the quantum confinement effect. In this paper, we demonstrate a junctionless FET which reveals a room temperature quantum confinement effect (RTQCE) achieved by a valley-engineering of the silicon. The strain-induced band splitting and a quantum confinement effect induced from ultra-thin-body silicon are the two main mechanisms for valley engineering. These were obtained from the extremely well-controlled silicon surface roughness and high tensile strain in silicon, thereupon demonstrating a device mobility increase of ~500% in a 2.5 nm thick silicon channel device. PMID:27389874

  3. Valley-engineered ultra-thin silicon for high-performance junctionless transistors

    NASA Astrophysics Data System (ADS)

    Kim, Seung-Yoon; Choi, Sung-Yool; Hwang, Wan Sik; Cho, Byung Jin

    2016-07-01

    Extremely thin silicon show good mechanical flexibility because of their 2-D like structure and enhanced performance by the quantum confinement effect. In this paper, we demonstrate a junctionless FET which reveals a room temperature quantum confinement effect (RTQCE) achieved by a valley-engineering of the silicon. The strain-induced band splitting and a quantum confinement effect induced from ultra-thin-body silicon are the two main mechanisms for valley engineering. These were obtained from the extremely well-controlled silicon surface roughness and high tensile strain in silicon, thereupon demonstrating a device mobility increase of ~500% in a 2.5 nm thick silicon channel device.

  4. Valley-engineered ultra-thin silicon for high-performance junctionless transistors

    PubMed Central

    Kim, Seung-Yoon; Choi, Sung-Yool; Hwang, Wan Sik; Cho, Byung Jin

    2016-01-01

    Extremely thin silicon show good mechanical flexibility because of their 2-D like structure and enhanced performance by the quantum confinement effect. In this paper, we demonstrate a junctionless FET which reveals a room temperature quantum confinement effect (RTQCE) achieved by a valley-engineering of the silicon. The strain-induced band splitting and a quantum confinement effect induced from ultra-thin-body silicon are the two main mechanisms for valley engineering. These were obtained from the extremely well-controlled silicon surface roughness and high tensile strain in silicon, thereupon demonstrating a device mobility increase of ~500% in a 2.5 nm thick silicon channel device. PMID:27389874

  5. Impurities analysis of polycrystalline silicon substrates: Neutronic Activation Analysis (NAA) and Secondary Ion Mass Spectrometry (SIMS)

    NASA Astrophysics Data System (ADS)

    Lounis, A.; Lenouar, K.; Gritly, Y.; Abbad, B.; Azzaz, M.; Taïbi, K.

    2010-01-01

    In this study we have determined the concentration of some impurities such as carbon, iron, copper, titanium, nickel of the flat product (polycrystalline silicon). These impurities generate a yield decrease in the photovoltaic components. The material (polycrystalline silicon) used in this work is manufactured by the Unit of Silicon Technology Development (UDTS Algiers, Algeria). The 80 kg ingot has been cutted into 16 briquettes in order to have plates (flat product) of 100 mm×100 mm dimensions. Each briquette is divided into three parts top (T), middle (M) and bottom (B). For this purpose, the following instrumental analysis techniques have been employed: neutronic analysis (neutronic activation analysis) and secondary ion mass spectrometry (SIMS). Masses of 80 mg are sampled and form of discs 18 mm in diameter, then exposed to a flux of neutron of 2.1012neutron cm-2 s-1 during 15 min. The energetic profile of incidental flux is constituted of fast neutrons (ΦR = 3.1012n.cm-2 s-1; E = 2 Mev), thermal neutrons (ΦTH = 1013n.cm-2 s-1; E = 0.025 ev) and epithermal neutrons (Φepi = 7.1011 n cm-2 s-1; E>4.9 ev), irradiation time 15 mn, after 20 mn of decrement, acquisitions of 300 s are carried out. The results are expressed by disintegration per second which does not exceed the 9000 Bq, 500 Bq and 2600 Bq, respectively for copper, titanium and nickel. It is observed that the impurities concentrations in the medium are higher. The impurities in the bottom of the ingots originate from the crucible. The impurities in the top originate from impurities dissolved in the liquid silicon, which have segregated to the top layer of the ingot and after solidification diffuse. Silicon corresponds to a mixture of three isotopes 28Si, 29Si and 30Si. These elements clearly appear on the mass spectrum (SIMS). The presence of iron and the one of nickel has been noticed.

  6. Micro-G silicon accelerometers with high performance CMOS interface circuitry

    NASA Astrophysics Data System (ADS)

    Yazdi, Navid

    High precision micro-g accelerometers are widely used in applications such as inertial navigation, microgravity measurements and seismology. The objective of this dissertation is to design and develop a z-axis micro-g accelerometer with high sensitivity, low noise, low temperature sensitivity, and good long-term stability. In order to achieve this goal, two novel all-silicon device structures, two single-wafer fabrication processes, and a novel interface CMOS circuit are introduced. The accelerometers are fabricated on a single silicon wafer using a combined bulk and surface micromachining technology. The first accelerometer is a fully-symmetrical capacitive device, which has a low cross-axis sensitivity in addition to the aforementioned performance targets. The accelerometer with a 4 x 1mm 2 proof mass shows a measured sensitivity of 19.4pF/g using turn-over tests, that yields a differential top and bottom sensitivity of 38.8pF/g. The calculated noise floor of this device at atmosphere is 0. 16 mug/√Hz. The second accelerometer is a high sensitivity capacitive device with a new folded-electrode structure. The structure provides closed-loop operation and differential capacitance measurement with a single-sided structure. The measured sensitivity for a device with 2.6 x 1mm2 proof mass is about 100pF/g. The calculated mechanical noise floor for the same device is 0.18mug/√Hz at atmosphere. Thorough analytical modeling and simulation of the accelerometer with finite electrode stiffness operated closed-loop are presented with an oversampled sigma-delta modulator chip. The simulations are performed in the time domain with inclusion of all non-idealities and non-linearities. The simulation results show a resolution of less than 10mug direct digital output and better than 1% linearity. Finally, a high performance interface circuit for the micro-g accelerometers is presented. This chip implements an oversampled sigma-delta modulator and can be both used for open

  7. Vacuum deposited polycrystalline silicon films for solar cell applications. Quarterly report, September 15-December 31, 1979

    SciTech Connect

    Feldman, C.; Arrington, C. H.; Blum, N. A.; Satkiewicz, F. G.

    1980-03-01

    Polycrystalline silicon films 14-22 ..mu..m thick and with average grain diameters of 20-40 ..mu..m were deposited by vacuum deposition onto both ceramic and sapphire substrates which were previously coated with a thin (1-2 ..mu..m) TiB/sub 2/ conducting layer. The large grains are the result of an interaction in the initial growth stages between silicon and TiB/sub 2/. SIMS studies of B/Ti/Al/sub 2/O/sub 3/, B/Al/sub 2/O/sub 3/, and Ti/Al/sub 2/O/sub 3/, interactions are reported as part of a continuing investigation of TiB/sub 2/ formation and silicon interactions on the TiB/sub 2/ surface. The increase in grain size has led to an improvement in the open-circuit voltage V/sub oc/, but not to an increase in the short-circuit current J/sub sc/. Capacitance-voltage measurements give results characteristic of an abrupt junction and a build-in voltage V/sub D/ consistent with the measured doping levels. A simple method for measuring the minority carrier diffusion length in the base region L/sub n/ is described. The measurements indicate that there is little change in L/sub n/ between large (20-40 ..mu..m) and small (approx. 5 ..mu..m) grained samples.

  8. Vacuum deposited polycrystalline silicon films for solar cell applications. Quarterly report, 1 April-30 June 1980

    SciTech Connect

    Feldman, C.; Arrington, III, C. H.; Blum, N. A.; Satkiewicz, F. G.

    1980-08-01

    Polycrystalline p-type films were vacuum deposited onto TiB/sub 2/ coated alumina and sapphire substrates. Epitaxial layers were also formed on single crystal silicon substrates. Junctions in the layers were created by both gaseous diffusion in a tube furnace and by vacuum deposition. The TiB/sub 2/ vacuum deposited bottom electrodes have resistivities between 30 and 40 ..mu.. ..cap omega..-cm. All-vacuum-deposited solar cells were fabricated for the first time. Efficiencies approaching those in the diffused junction devices were achieved. The n-layers were deposited on the previously deposited p-layer/TiB/sub 2//ceramic sandwiches by vacuum deposition of silicon in a phosphine (PH/sub 3/) atmosphere. Photovoltaic data in diffused junction samples, including efficiency and spectral response measurements, indicate that crystallite size may no longer be the limiting factor in achieving high efficiency; rather, performance is now being limited by the presence of impurities in the vacuum deposition silicon base region.

  9. Comparison of boron precipitation in p-type bulk nanostructured and polycrystalline silicon germanium alloy

    NASA Astrophysics Data System (ADS)

    Zamanipour, Zahra; Krasinski, Jerzy S.; Vashaee, Daryoosh

    2013-04-01

    Boron precipitation process and its effect on electronic properties of p-type bulk nanostructured silicon germanium (Si0.8Ge0.2) compared with large grain polycrystalline Si0.8Ge0.2 have been studied. The structures were synthesized and their thermoelectric properties were measured versus temperature during heating and cooling cycles. The experimental data showed stronger temperature variation of Seebeck coefficient, carrier concentration, and conductivity in the nanostructured Si0.8Ge0.2 compared with the polycrystalline form indicating stronger boron precipitation in this structure. The electrical properties of both samples were calculated using a multi-band semi-classical model. The theoretical calculations confirm that the increase of boron precipitation in the nanostructured Si0.8Ge0.2 is responsible for its higher thermal instability. Since the thermoelectric properties of the nanostructured sample degrade as a result of thermal cycling, the material is appropriate only for continuous operation at high temperature without cooling.

  10. On properties of boundaries and electron conductivity in mesoscopic polycrystalline silicon films for memory devices

    SciTech Connect

    Berman, G.P.; Doolen, G.D.; Mainieri, R.; Rehacek, J.; Campbell, D.K.; Luchnikov, V.A.; Nagaev, K.E.

    1998-02-01

    The authors present the results of MD modeling on the structural properties of grain boundaries (GB) in thin polycrystalline films. The transition from crystalline boundaries with low mismatch angle to amorphous boundaries is investigated. It is shown that the structures of the GBs satisfy a thermodynamical criterion suggested in a cited reference. The potential energy of silicon atoms is closely related with a geometrical quantity -- tetragonality of their coordination with their nearest neighbors. A crossover of the length of localization is observed to analyze the crossover of the length of localization of the single electron states and properties of conductance of the thin polycrystalline film at low temperature. They use a two-dimensional Anderson localization model, with the random one site electron charging energy for a single grain (dot), random non-diagonal matrix elements, and random number of connections between the neighboring grains. The results on the crossover behavior of localization length of the single electron states and characteristic properties of conductance are presented in the region of parameters where the transition from an insulator to a conductor regimes takes place.

  11. Suppressing light reflection from polycrystalline silicon thin films through surface texturing and silver nanostructures

    SciTech Connect

    Akhter, Perveen; Huang, Mengbing Kadakia, Nirag; Spratt, William; Malladi, Girish; Bakhru, Hassarum

    2014-09-21

    This work demonstrates a novel method combining ion implantation and silver nanostructures for suppressing light reflection from polycrystalline silicon thin films. Samples were implanted with 20-keV hydrogen ions to a dose of 10¹⁷/cm², and some of them received an additional argon ion implant to a dose of 5×10¹⁵ /cm² at an energy between 30 and 300 keV. Compared to the case with a single H implant, the processing involved both H and Ar implants and post-implantation annealing has created a much higher degree of surface texturing, leading to a more dramatic reduction of light reflection from polycrystalline Si films over a broadband range between 300 and 1200 nm, e.g., optical reflection from the air/Si interface in the AM1.5 sunlight condition decreasing from ~30% with an untextured surface to below 5% for a highly textured surface after post-implantation annealing at 1000°C. Formation of Ag nanostructures on these ion beam processed surfaces further reduces light reflection, and surface texturing is expected to have the benefit of diminishing light absorption losses within large-size (>100 nm) Ag nanoparticles, yielding an increased light trapping efficiency within Si as opposed to the case with Ag nanostructures on a smooth surface. A discussion of the effects of surface textures and Ag nanoparticles on light trapping within Si thin films is also presented with the aid of computer simulations.

  12. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

    SciTech Connect

    Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  13. Modeling and simulation of temperature effect in polycrystalline silicon PV cells

    NASA Astrophysics Data System (ADS)

    Marcu, M.; Niculescu, T.; Slusariuc, R. I.; Popescu, F. G.

    2016-06-01

    Due to the human needs of energy, there is a need to apply new technologies in energy conversion to supply the demand of clean and cheap energy in the context of environmental issues. Renewable energy sources like solar energy has one of the highest potentials. In this paper, solar panel is the key part of a photovoltaic system which converts solar energy to electrical energy. The purpose of this paper is to give a MATLAB/ Simulink simulation for photovoltaic module based on the one-diode model of a photovoltaic cell made of polycrystalline silicon. This model reveals the effect of the ambient temperature and the heating of the panel due to the solar infrared radiation. Also the measurements on the solar cell exposed to solar radiation can confirm the simulation.

  14. Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuits for Active Matrix Organic Light Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Fan, Ching-Lin; Lin, Yu-Sheng; Liu, Yan-Wei

    A new pixel design and driving method for active matrix organic light emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage programming method are proposed and verified using the SPICE simulator. We had employed an appropriate TFT model in SPICE simulation to demonstrate the performance of the pixel circuit. The OLED anode voltage variation error rates are below 0.35% under driving TFT threshold voltage deviation (Δ Vth =± 0.33V). The OLED current non-uniformity caused by the OLED threshold voltage degradation (Δ VTO =+0.33V) is significantly reduced (below 6%). The simulation results show that the pixel design can improve the display image non-uniformity by compensating for the threshold voltage deviation in the driving TFT and the OLED threshold voltage degradation at the same time.

  15. Graphitization of n-type polycrystalline silicon carbide for on-chip supercapacitor application

    NASA Astrophysics Data System (ADS)

    Liu, Fang; Gutes, Albert; Laboriante, Ian; Carraro, Carlo; Maboudian, Roya

    2011-09-01

    Synthesis of silicon carbide-derived carbon films with excellent supercapacitor characteristics is demonstrated by a process that is fully compatible with standard microfabrication technology. NiTi alloy deposited on nitrogen-doped polycrystalline SiC films is shown to result in the growth of a rough, porous, high conductivity, nanocrystalline graphitic carbon film upon rapid thermal annealing to 1050 °C. Electrodes fabricated in this manner exhibit high charge/discharge rates with a time constant of about 0.062 s. Analysis shows that the incorporated nitrogen in the carbon electrode may induce pseudo-capacitance, and the electrodes exhibit the capacitance/area values comparable to those reported on carbon nanotube-based supercapacitors.

  16. Design and test of reliable high strength ingressive polycrystalline silicon microgripper arrays

    NASA Astrophysics Data System (ADS)

    Hazra, S. S.; Beuth, J. L.; Myers, G. A.; DelRio, F. W.; de Boer, M. P.

    2015-01-01

    We present the design and validation of a micromachined gripper array that enables reliable transmission of forces of at least 14 mN. The gripper is constructed with polycrystalline silicon (polysilicon), a brittle material, and is compatible with polysilicon surface micromachining. Two ingressive snap-and-lock array designs are presented. After developing design guidelines, it is shown that the first gripper array is functional. However, a risk remains that the gripper array rather than the tensile bar that it grips in its intended application fails. Therefore, an improved geometry is designed and it is shown that it is robust with respect to failure. Scanning confocal Raman imaging directly confirms that the local peak tensile stresses in the robust gripper array are approximately 50% of the lower bound material strength, and also resolves a 25% stress variation across the array.

  17. Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration

    NASA Astrophysics Data System (ADS)

    Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Jeon, Chang-Hoon; Jeon, Gwang-Jae; Han, Jin-Woo; Kim, Choong-Ki; Park, Sang-Jae; Lee, Hee Chul; Choi, Yang-Kyu

    2016-01-01

    The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3- dimensional films, and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy.

  18. Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration

    PubMed Central

    Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Jeon, Chang-Hoon; Jeon, Gwang-Jae; Han, Jin-Woo; Kim, Choong-Ki; Park, Sang-Jae; Lee, Hee Chul; Choi, Yang-Kyu

    2016-01-01

    The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3- dimensional films, and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy. PMID:26782708

  19. Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration.

    PubMed

    Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Jeon, Chang-Hoon; Jeon, Gwang-Jae; Han, Jin-Woo; Kim, Choong-Ki; Park, Sang-Jae; Lee, Hee Chul; Choi, Yang-Kyu

    2016-01-01

    The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3-dimensional films, and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy. PMID:26782708

  20. Mesoporous Silicon Sponge as an Anti-Pulverization Structure for High-Performance Lithium-ion Battery Anodes

    SciTech Connect

    Li, Xiaolin; Gu, Meng; Hu, Shenyang Y.; Kennard, Rhiannon; Yan, Pengfei; Chen, Xilin; Wang, Chong M.; Sailor, Michael J.; Zhang, Jiguang; Liu, Jun

    2014-07-08

    Nanostructured silicon is a promising anode material for high performance lithium-ion batteries, yet scalable synthesis of such materials, and retaining good cycling stability in high loading electrode remain significant challenges. Here, we combine in-situ transmission electron microscopy and continuum media mechanical calculations to demonstrate that large (>20 micron) mesoporous silicon sponge (MSS) prepared by the scalable anodization method can eliminate the pulverization of the conventional bulk silicon and limit particle volume expansion at full lithiation to ~30% instead of ~300% as observed in bulk silicon particles. The MSS can deliver a capacity of ~750 mAh/g based on the total electrode weight with >80% capacity retention over 1000 cycles. The first-cycle irreversible capacity loss of pre-lithiated MSS based anode is only <5%. The insight obtained from MSS also provides guidance for the design of other materials that may experience large volume variation during operations.

  1. Improved Retention Characteristic in Polycrystalline Silicon-Oxide-Hafnium Oxide-Oxide-Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride

    NASA Astrophysics Data System (ADS)

    Hsieh, Chih Ren; Lai, Chiung Hui; Lin, Bo Chun; Zheng, Yuan Kai; Chung Lou, Jen; Lin, Gray

    2011-03-01

    In this paper, we present a simple novel process for forming a robust and reliable oxynitride dielectric with a high nitrogen content. It is highly suitable for n-channel metal-oxide-semiconductor field-effect transistor (nMOSFETs) and polycrystalline silicon-oxide-hafnium oxide-oxide-silicon (SOHOS)-type memory applications. The proposed approach is realized by using chemical oxide with ammonia (NH3) nitridation followed by reoxidation with oxygen (O2). The novel oxynitride process is not only compatible with the standard complementary metal-oxide-semiconductor (CMOS) process, but also can ensure the improvement of flash memory with low-cost manufacturing. The characteristics of nMOSFETs and SOHOS-type nonvolatile memories (NVMs) with a robust oxynitride as a gate oxide or tunnel oxide are studied to demonstrate their advantages such as the retardation of the stress-induced trap generation during constant-voltage stress (CVS), the program/erase behaviors, cycling endurance, and data retention. The results indicate that the proposed robust oxynitride is suitable for future nonvolatile flash memory technology application.

  2. Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

    NASA Astrophysics Data System (ADS)

    Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

    2011-05-01

    The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

  3. Polycrystalline silicon thin-film transistors fabricated by Joule-heating-induced crystallization

    NASA Astrophysics Data System (ADS)

    Hong, Won-Eui; Ro, Jae-Sang

    2015-01-01

    Joule-heating-induced crystallization (JIC) of amorphous silicon (a-Si) films is carried out by applying an electric pulse to a conductive layer located beneath or above the films. Crystallization occurs across the whole substrate surface within few tens of microseconds. Arc instability, however, is observed during crystallization, and is attributed to dielectric breakdown in the conductor/insulator/transformed polycrystalline silicon (poly-Si) sandwich structures at high temperatures during electrical pulsing for crystallization. In this study, we devised a method for the crystallization of a-Si films while preventing arc generation; this method consisted of pre-patterning an a-Si active layer into islands and then depositing a gate oxide and gate electrode. Electric pulsing was then applied to the gate electrode formed using a Mo layer. The Mo layer was used as a Joule-heat source for the crystallization of pre-patterned active islands of a-Si films. JIC-processed poly-Si thin-film transistors (TFTs) were fabricated successfully, and the proposed method was found to be compatible with the standard processing of coplanar top-gate poly-Si TFTs.

  4. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    SciTech Connect

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

    2014-11-10

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

  5. A high performance three-phase enzyme electrode based on superhydrophobic mesoporous silicon nanowire arrays for glucose detection

    NASA Astrophysics Data System (ADS)

    Xu, Chenlong; Song, Zhiqian; Xiang, Qun; Jin, Jian; Feng, Xinjian

    2016-03-01

    We describe here a high performance oxygen-rich three-phase enzyme electrode based on superhydrophobic mesoporous silicon nanowire arrays for glucose detection. We demonstrate that its linear detection upper limit is 30 mM, more than 15 times higher than that can be obtained on the normal enzyme-electrode. Notably, the three-phase enzyme electrode output is insensitive to the significant oxygen level fluctuation in analyte solution.We describe here a high performance oxygen-rich three-phase enzyme electrode based on superhydrophobic mesoporous silicon nanowire arrays for glucose detection. We demonstrate that its linear detection upper limit is 30 mM, more than 15 times higher than that can be obtained on the normal enzyme-electrode. Notably, the three-phase enzyme electrode output is insensitive to the significant oxygen level fluctuation in analyte solution. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08370b

  6. Fracture toughness of low-pressure chemical-vapor-deposited polycrystalline silicon carbide thin films

    NASA Astrophysics Data System (ADS)

    Hatty, V.; Kahn, H.; Trevino, J.; Zorman, C. A.; Mehregany, M.; Ballarini, R.; Heuer, A. H.

    2006-01-01

    The fracture toughness of thin-film polycrystalline silicon carbide (poly-SiC) deposited on silicon (Si) wafers via low-pressure chemical-vapor deposition (LPCVD) has been measured on a scale useful for micromachined devices; the results are compared to previous studies on poly-SiC thin films deposited by atmospheric pressure chemical-vapor deposition (APCVD) [Bellante et al., Appl. Phys. Lett. 86, 071920 (2005)]. Samples in this study included those with and without silicon dioxide (SiO2) sacrificial release layers. The LPCVD processing technique induces residual tensile stresses in the films. Doubly clamped microtensile specimens were fabricated using standard micromachining processes, and microindentation was used to initiate atomically sharp precracks. The residual stresses in the films create stress intensity factors K at the crack tips; upon release, the precracks whose K exceeded a critical value, KIC, propagated to failure. The fracture toughness KIC was the same for both types of devices, 2.9+/-0.2 MPa m1/2 for the SiC on Si samples and 3.0+/-0.2 MPa m1/2 for the SiC on SiO2/Si samples, and similar to that found for APCVD poly-SiC, 2.8<=KIC<=3.4 MPa m1/2 [Bellante et al., Appl. Phys. Lett. 86, 071920 (2005)], indicating that KIC is truly a structure-insensitive material property. The fracture toughness of poly-SiC compares favorably with that for polysilicon, 0.85+/-0.05 MPa m1/2 [Kahn et al., Science 298, 1215 (2002)].

  7. A high performance three-phase enzyme electrode based on superhydrophobic mesoporous silicon nanowire arrays for glucose detection.

    PubMed

    Xu, Chenlong; Song, Zhiqian; Xiang, Qun; Jin, Jian; Feng, Xinjian

    2016-04-14

    We describe here a high performance oxygen-rich three-phase enzyme electrode based on superhydrophobic mesoporous silicon nanowire arrays for glucose detection. We demonstrate that its linear detection upper limit is 30 mM, more than 15 times higher than that can be obtained on the normal enzyme-electrode. Notably, the three-phase enzyme electrode output is insensitive to the significant oxygen level fluctuation in analyte solution. PMID:26983941

  8. High-Performance and Omnidirectional Thin-Film Amorphous Silicon Solar Cell Modules Achieved by 3D Geometry Design.

    PubMed

    Yu, Dongliang; Yin, Min; Lu, Linfeng; Zhang, Hanzhong; Chen, Xiaoyuan; Zhu, Xufei; Che, Jianfei; Li, Dongdong

    2015-11-01

    High-performance thin-film hydrogenated amorphous silicon solar cells are achieved by combining macroscale 3D tubular substrates and nanoscaled 3D cone-like antireflective films. The tubular geometry delivers a series of advantages for large-scale deployment of photovoltaics, such as omnidirectional performance, easier encapsulation, decreased wind resistance, and easy integration with a second device inside the glass tube. PMID:26418573

  9. Applications of ion implantation to high performance, radiation tolerant silicon solar cells

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, A. R.; Minnucci, J. A.; Matthei, K. W.

    1979-01-01

    Progress in the development of ion implanted silicon solar cells is reported. Effective back surface preparation by implantation, junction processing to achieve high open circuit voltages in low-resistivity cells, and radiation tolerance cells are among the topics studied.

  10. The strength of polycrystalline silicon at the micro- and nano-scales with applications to MEMS

    NASA Astrophysics Data System (ADS)

    Chasiotis, Ioannis

    A new method for tensile testing of thin films by means of an improved apparatus has been developed to measure the elastic properties (Young's modulus, tensile strength) of surface micromachined polycrystalline silicon specimens. The newly designed tensile tester makes use of an Ultraviolet (UV) light curable adhesive to clamp micron-sized specimens. The properties determination utilizes surface topologies of deforming specimens, acquired with an Atomic Force Microscope (AFM), for determining strain fields by means of Digital Image Correlation (DIC). This full-field, direct and local measurements technique provides the capability of testing any type of thin film materials with nanometer resolution. A systematic study of small-scale size effects was thus performed by tensioning elliptically perforated specimens (minimum radius of curvature of 1 mum) so as to: (a) vary the stress concentration with constant radius of curvature, (b) increasing radius of curvature of micronotches relative to the grain size. The results demonstrate a strong influence of the size of the highly strained domain (decreasing notch radii) on the failure strength of MEMS scale specimens, while the effect of varying the stress concentration factor is rather insignificant. In addition, tests performed on unnotched tensile specimens of varying dimensions revealed a specimen size effect by which the values of strength scaled with the specimen length. The Young's modulus, however, is found to be rather insensitive to the specimen dimensions at the scale of microns. Contrary to the common belief that 49% HF wet release represents a safe post-process for manufacturing polycrystalline silicon, this study has clearly identified the release process as a key item in determining thin film failure properties. It is found that surface roughness as characterized by groove formation at the grain boundaries depends distinctly on the HF release time. In addition, while the actual failure mechanism in

  11. The effects of spatial location of defect states on the switching characteristics of amorphous and polycrystalline silicon thin film transistors: A numerical simulation using AMPS 2-D

    SciTech Connect

    Smith, J.; Fonash, S.; Kalkan, A.

    1994-06-01

    We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

  12. Leakage Current Suppression on Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistors by Asymmetrically Deposited Nickel

    NASA Astrophysics Data System (ADS)

    Byun, Chang Woo; Son, Se Wan; Lee, Yong Woo; Hyo Park, Jae; Vakilipour Takaloo, Ashkan; Joo, Seung Ki

    2013-10-01

    The electrical performance of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) fabricated by metal-induced lateral crystallization (MILC) is greatly affected by metal catalyst contaminations, such as Ni and Ni silicide trapped in the channel, since they concentrate in front of laterally grown crystallites. In the present work, the effect of the MILC/MILC boundary (MMB) on MILC polycrystalline silicon (poly-Si) TFTs is investigated by the comparison of MILC poly-Si TFTs with MMB at the center of the channel, and equivalent TFTs with MMB at a position ejected from the channel. The MMB location was controlled by the Ni catalyst position. Both a low off-state leakage current and a free from short channel effect (kink effect) were observed in high electric-field conditions. Furthermore, the field-effect mobility and drain current noise were drastically improved by ejecting the MILC boundary in the source direction.

  13. Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

    PubMed Central

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-01-01

    One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing

  14. Well-constructed silicon-based materials as high-performance lithium-ion battery anodes.

    PubMed

    Liu, Lehao; Lyu, Jing; Li, Tiehu; Zhao, Tingkai

    2016-01-14

    Silicon has been considered as one of the most promising anode material alternates for next-generation lithium-ion batteries, because of its high theoretical capacity, environmental friendliness, high safety, low cost, etc. Nevertheless, silicon-based anode materials (especially bulk silicon) suffer from severe capacity fading resulting from their low intrinsic electrical conductivity and great volume variation during lithiation/delithiation processes. To address this challenge, a few special constructions from nanostructures to anchored, flexible, sandwich, core-shell, porous and even integrated structures, have been well designed and fabricated to effectively improve the cycling performance of silicon-based anodes. In view of the fast development of silicon-based anode materials, we summarize their recent progress in structural design principles, preparation methods, morphological characteristics and electrochemical performance by highlighting the material structure. We also point out the associated problems and challenges faced by these anodes and introduce some feasible strategies to further boost their electrochemical performance. Furthermore, we give a few suggestions relating to the developing trends to better mature their practical applications in next-generation lithium-ion batteries. PMID:26666682

  15. Well-constructed silicon-based materials as high-performance lithium-ion battery anodes

    NASA Astrophysics Data System (ADS)

    Liu, Lehao; Lyu, Jing; Li, Tiehu; Zhao, Tingkai

    2015-12-01

    Silicon has been considered as one of the most promising anode material alternates for next-generation lithium-ion batteries, because of its high theoretical capacity, environmental friendliness, high safety, low cost, etc. Nevertheless, silicon-based anode materials (especially bulk silicon) suffer from severe capacity fading resulting from their low intrinsic electrical conductivity and great volume variation during lithiation/delithiation processes. To address this challenge, a few special constructions from nanostructures to anchored, flexible, sandwich, core-shell, porous and even integrated structures, have been well designed and fabricated to effectively improve the cycling performance of silicon-based anodes. In view of the fast development of silicon-based anode materials, we summarize their recent progress in structural design principles, preparation methods, morphological characteristics and electrochemical performance by highlighting the material structure. We also point out the associated problems and challenges faced by these anodes and introduce some feasible strategies to further boost their electrochemical performance. Furthermore, we give a few suggestions relating to the developing trends to better mature their practical applications in next-generation lithium-ion batteries.

  16. High-Temperature Thermoelectric Properties of Polycrystalline Silicon Clathrate Ba8TM x Si46- x (TM = Ni, Pt)

    NASA Astrophysics Data System (ADS)

    Kikuchi, Daisuke; Fujimura, Koji; Tadokoro, Jun; Matsumoto, Miko; Yamazaki, Satoshi; Sasaki, Hirokazu; Eguchi, Tatsuhiko; Susai, Kyota

    2016-03-01

    The n-/ p-type stability of a silicon clathrate in which silicon was substituted with nickel or platinum was evaluated by density functional theory calculations. Then, Ba8Pt5Si41 and Ba8Pt1.5Ni3.5Si41 were synthesized, and their thermoelectric properties were investigated. The polycrystalline compounds, which have a type-I clathrate structure, were prepared through arc melting and spark-plasma-sintering. The crystal structures and elemental compositions of the synthesized samples were characterized via powder x-ray diffraction and electron microprobe analyses, respectively. The temperature dependence of both the electrical resistivity and the Seebeck coefficient was measured.

  17. Designing high performance precursors for atomic layer deposition of silicon oxide

    SciTech Connect

    Mallikarjunan, Anupama Chandra, Haripin; Xiao, Manchao; Lei, Xinjian; Pearlstein, Ronald M.; Bowen, Heather R.; O'Neill, Mark L.; Derecskei-Kovacs, Agnes; Han, Bing

    2015-01-15

    Conformal and continuous silicon oxide films produced by atomic layer deposition (ALD) are enabling novel processing schemes and integrated device structures. The increasing drive toward lower temperature processing requires new precursors with even higher reactivity. The aminosilane family of precursors has advantages due to their reactive nature and relative ease of use. In this paper, the authors present the experimental results that reveal the uniqueness of the monoaminosilane structure [(R{sub 2}N)SiH{sub 3}] in providing ultralow temperature silicon oxide depositions. Disubstituted aminosilanes with primary amines such as in bis(t-butylamino)silane and with secondary amines such as in bis(diethylamino)silane were compared with a representative monoaminosilane: di-sec-butylaminosilane (DSBAS). DSBAS showed the highest growth per cycle in both thermal and plasma enhanced ALD. These findings show the importance of the arrangement of the precursor's organic groups in an ALD silicon oxide process.

  18. Control carrier recombination of multi-scale textured black silicon surface for high performance solar cells

    NASA Astrophysics Data System (ADS)

    Hong, M.; Yuan, G. D.; Peng, Y.; Chen, H. Y.; Zhang, Y.; Liu, Z. Q.; Wang, J. X.; Cai, B.; Zhu, Y. M.; Chen, Y.; Liu, J. H.; Li, J. M.

    2014-06-01

    We report an enhanced performance of multi-scale textured black silicon solar cell with power conversion efficiency of 15.5% by using anisotropic tetramethylammonium hydroxide etching to control the recombination. The multi-scale texture can effectively reduce the surface reflectance in a wide wavelength range, and both the surface and Auger recombination can be effectively suppressed by etching the samples after the n++ emitter formed. Our result shows that the reformed solar cell has higher conversion efficiency than that of conventional pyramid textured cell (15.3%). This work presents an effective method for improving the performance of nanostructured silicon solar cells.

  19. Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires

    NASA Astrophysics Data System (ADS)

    Suriano, F.; Ferri, M.; Moscatelli, F.; Mancarella, F.; Belsito, L.; Solmi, S.; Roncaglia, A.; Frabboni, S.; Gazzadi, G. C.; Narducci, D.

    2015-01-01

    The thermoelectric properties of doped polycrystalline silicon nanowires have been investigated using doping techniques that impact grain growth in different ways during the doping process. In particular, As- and P-doped nanowires were fabricated using a process flow which enables the manufacturing of surface micromachined nanowires contacted by Al/Si pads in a four-terminal configuration for thermal conductivity measurement. Also, dedicated structures for the measurement of the Seebeck coefficient and electrical resistivity were prepared. In this way, the thermoelectric figure of merit of the nanowires could be evaluated. The As-doped nanowires were heavily doped by thermal doping from spin-on-dopant sources, whereas predeposition from POCl3 was utilized for the P-doped nanowires. The thermal conductivity measured on the nanowires appeared to depend on the doping type. The P-doped nanowires showed, for comparable cross-sections, higher thermal conductivity values than As-doped nanowires, most probably because of their finer grain texture, resulting from the inhibition effect that such doping elements have on grain growth during high-temperature annealing.

  20. Polycrystalline silicon carbide dopant profiles obtained through a scanning nano-Schottky contact

    NASA Astrophysics Data System (ADS)

    Golt, M. C.; Strawhecker, K. E.; Bratcher, M. S.; Shanholtz, E. R.

    2016-07-01

    The unique thermo-electro-mechanical properties of polycrystalline silicon carbide (poly-SiC) make it a desirable candidate for structural and electronic materials for operation in extreme environments. Necessitated by the need to understand how processing additives influence poly-SiC structure and electrical properties, the distribution of lattice defects and impurities across a specimen of hot-pressed 6H poly-SiC processed with p-type additives was visualized with high spatial resolution using a conductive atomic force microscopy approach in which a contact forming a nano-Schottky interface is scanned across the sample. The results reveal very intricate structures within poly-SiC, with each grain having a complex core-rim structure. This complexity results from the influence the additives have on the evolution of the microstructure during processing. It was found that the highest conductivities localized at rims as well as at the interface between the rim and the core. The conductivity of the cores is less than the conductivity of the rims due to a lower concentration of dopant. Analysis of the observed conductivities and current-voltage curves is presented in the context of nano-Schottky contact regimes where the conventional understanding of charge transport to diode operation is no longer valid.

  1. A characterisation of electronic properties of alkaline texturized polycrystalline silicon solar cells using IBIC

    NASA Astrophysics Data System (ADS)

    Jakob, A. M.; Spemann, D.; Thies, R.; Barzola-Quiquia, J.; Vogt, J.; Butz, T.

    2011-10-01

    In this study, electronic properties of p-type alkaline texturized polycrystalline silicon solar cells were investigated using ion beam induced charge (IBIC) analysis. With this technique, quantitative information on electronic diffusion lengths and average electronic capture cross sections of lattice defects generated by high energy protons were obtained. Angular-resolved IBIC analysis was used to quantify the electronic diffusion lengths. For this purpose, the experimental data were fitted using a simulation based on the Ramo-Shockley-Gunn (RSG) theorem and the assumption of an abrupt pn-junction. In order to determine the average electronic capture cross section of proton-induced lattice defects, the loss of charge collection efficiency (CCE) was plotted vs. the accumulated ion fluence. As will be demonstrated, a simple model based on charge carrier diffusion and Shockley-Read-Hall (SRH) recombination is able to fit the CCE loss well. Furthermore, spatially and energetically highly resolved IBIC-maps of grain boundaries were recorded. A comparison with PIXE-maps shows that there is no correlation observable between CCE variations at grain boundaries and metallic impurities within the PIXE detection limits of a few ppm. On the contrary, there is an evident correlation to the morphology of the sample's surface as was observed by comparing IBIC-maps and SEM-micrographs. These local CCE fluctuations are dominated by the interplay of charge carrier diffusion processes and the sample surface morphology.

  2. Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

    SciTech Connect

    Kumar, Avishek E-mail: dalapatig@imre.a-star.edu.sg; Law, Felix; Widenborg, Per I.; Dalapati, Goutam K. E-mail: dalapatig@imre.a-star.edu.sg; Subramanian, Gomathy S.; Tan, Hui R.; Aberle, Armin G.

    2014-11-01

    n-type polycrystalline silicon (poly-Si) films with very large grains, exceeding 30 μm in width, and with high Hall mobility of about 71.5 cm{sup 2}/V s are successfully prepared by the solid-phase crystallization technique on glass through the control of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The effect of this gas flow ratio on the electronic and structural quality of the n-type poly-Si thin film is systematically investigated using Hall effect measurements, Raman microscopy, and electron backscatter diffraction (EBSD), respectively. The poly-Si grains are found to be randomly oriented, whereby the average area weighted grain size is found to increase from 4.3 to 18 μm with increase of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The stress in the poly-Si thin films is found to increase above 900 MPa when the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio is increased from 0.025 to 0.45. Finally, high-resolution transmission electron microscopy, high angle annular dark field-scanning tunneling microscopy, and EBSD are used to identify the defects and dislocations caused by the stress in the fabricated poly-Si films.

  3. Strength and inelastic deformation in shocked polycrystalline silicon carbide. Final progress report, July 1992--June 1995

    SciTech Connect

    Gupta, Y.M.

    1998-07-10

    The objective of this research project was to quantify the response of shocked ceramics, including strength in the shocked state, to understand the mechanisms governing inelastic deformation at high stresses and high strain- rates in these materials. In-situ, piezoresistance stress gauge measurements were obtained in dense, polycrystalline silicon carbide (SiC) samples subjected to plane wave loading. A significant effort was carried out to ensure a self-consistent analysis of the lateral piezoresistance gauge data. Analysis of the longitudinal data revealed an inelastic response that could be modeled using either a strain hardening, plasticity model or a pressure-dependent strength model with stress relaxation. Experimental measurements and analysis of the lateral gauge data in SiC, currently underway, are needed to develop a comprehensive understanding of shocked SiC. Preliminary experiments and numerical calculations were completed to undertake combined compression and shear wave measurements in the SiC. The use of lateral piezoresistance gauges, and compression-shear measurements provide independent corroborations of material strength in the shocked state. This determination is important for understanding the differences in the compressive and tensile response of shocked ceramics.

  4. Thin film polycrystalline silicon: Promise and problems in displays and solar cells

    SciTech Connect

    Fonash, S.J.

    1995-08-01

    Thin film polycrystalline Si (poly-Si) with its carrier mobilities, potentially good stability, low intragrain defect density, compatibility with silicon processing, and ease of doping activation is an interesting material for {open_quotes}macroelectronics{close_quotes} applications such as TFTs for displays and solar cells. The poly-Si films needed for these applications can be ultra-thin-in the 500{Angstrom} to 1000{Angstrom} thickness range for flat panel display TFTs and in the 4{mu}m to 10{mu}m thickness range for solar cells. Because the films needed for these microelectronics applications can be so thin, an effective approach to producing the films is that of crystallizing a-Si precursor material. Unlike cast materials, poly-Si films made this way can be produced using low temperature processing. Unlike deposited poly-Si films, these crystallized poly-Si films can have grain widths that are much larger than the film thickness and almost atomically smooth surfaces. This thin film poly-Si crystallized from a-Si precursor films, and its promise and problems for TFTs and solar cells, is the focus of this discussion.

  5. 193nm immersion lithography for high-performance silicon photonic circuits

    NASA Astrophysics Data System (ADS)

    Selvaraja, Shankar K.; Winroth, Gustaf; Locorotondo, Sabrina; Murdoch, Gayle; Milenin, Alexey; Delvaux, Christie; Ong, Patrick; Pathak, Shibnath; Xie, Weiqiang; Sterckx, Gunther; Lepage, Guy; Van Thourhout, Dries; Bogaerts, Wim; Van Campenhout, Joris; Absil, Philippe

    2014-04-01

    Large-scale photonics integration has been proposed for many years to support the ever increasing requirements for long and short distance communications as well as package-to-package interconnects. Amongst the various technology options, silicon photonics has imposed itself as a promising candidate, relying on CMOS fabrication processes. While silicon photonics can share the technology platform developed for advanced CMOS devices it has specific dimension control requirements. Though the device dimensions are in the order of the wavelength of light used, the tolerance allowed can be less than 1% for certain devices. Achieving this is a challenging task which requires advanced patterning techniques along with process control. Another challenge is identifying an overlapping process window for diverse pattern densities and orientations on a single layer. In this paper, we present key technology challenges faced when using optical lithography for silicon photonics and advantages of using the 193nm immersion lithography system. We report successful demonstration of a modified 28nm- STI-like patterning platform for silicon photonics in 300mm Silicon-On-Insulator wafer technology. By careful process design, within-wafer CD variation (1sigma) of <1% is achieved for both isolated (waveguides) and dense (grating) patterns in silicon. In addition to dimensional control, low sidewall roughness is a crucial to achieve low scattering loss in the waveguides. With this platform, optical propagation loss as low as ~0.7 dB/cm is achieved for high-confinement single mode waveguides (450x220nm). This is an improvement of >20 % from the best propagation loss reported for this cross-section fabricated using e-beam lithography. By using a single-mode low-confinement waveguide geometry the loss is further reduced to ~0.12 dB/cm. Secondly, we present improvement in within-device phase error in wavelength selective devices, a critical parameter which is a direct measure of line

  6. Hot-Wire Chemical Vapor Deposition Of Polycrystalline Silicon : From Gas Molecule To Solar Cell

    NASA Astrophysics Data System (ADS)

    van Veenendaal, P. A. T. T.

    2002-10-01

    Although the effort to investigate the use of renewable energy sources, such as wind and solar energy, has increased, their contribution to the total energy consumption remains insignificant. The conversion of solar energy into electricity through solar cells is one of the most promising techniques, but the use of these cells is limited by the high cost of electricity. The major contributions to these costs are the material and manufacturing costs. Over the past decades, the development of silicon based thin film solar cells has received much attention, because the fabrication costs are low. A promising material for use in thin film solar cells is polycrystalline silicon (poly-Si:H). A relatively new technique to deposit poly-Si:H is Hot-Wire Chemical Vapor Deposition (Hot-Wire CVD), in which the reactant gases are catalytically decomposed at the surface of a hot filament, mainly tungsten and tantalum. The main advantages of Hot-Wire CVD over PE-CVD are absence of ion bombardment, high deposition rate, low equipment cost and high gas utilization. This thesis deals with the full spectrum of deposition, characterization and application of poly-Si:H thin films, i.e. from gas molecule to solar cell. Studies on the decomposition of silane on the filament showed that the process is catalytic of nature and that silane is decomposed into Si and 4H. The dominant gas phase reaction is the reaction of Si and H with silane, resulting in SiH3, Si2H6, Si3H6 and H2SiSiH2. The film growth precursors are Si, SiH3 and Si2H4. Also, XPS results on used tantalum and tungsten filaments are discussed. The position dependent measurements show larger silicon contents at the ends of the tungsten filament, as compared to the middle, due to a lower filament temperature. This effect is insignificant for a tantalum filament. Deposition time dependent measurements show an increase in silicon content of the tungsten filament with time, while the silicon content on the tantalum filament saturates

  7. Ultra-thin silicon solar cells for high performance panel applications

    NASA Technical Reports Server (NTRS)

    Gay, C. F.

    1978-01-01

    Solar cells have been fabricated which achieved the highest power to mass ratios and radiation stability yet reported for silicon devices. The thinnest cells (.04 mm) had initial efficiencies in excess of 2 watts per gram (AMO) and 1.7 watts per gram after an irradiation of 1 x 10 to the 15th equivalent 1 MeV electrons per square centimeter. The cells have been successfully interconnected by welding and filtered using a FEP bonded, ceria-doped microsheet of six mil thickness. Handling losses during cell manufacture and panel assembly may be minimized through the use of an integral reinforcing perimeter or ribs which remove almost all restrictions on cell thickness and area. Such a cell is typically composed of a main section which can be as thin as 0.015 mm and is supported at the edge by a thicker border (0.20 mm) of silicon.

  8. Defect Engineering, Cell Processing, and Modeling for High-Performance, Low-Cost Crystalline Silicon Photovoltaics

    SciTech Connect

    Buonassisi, Tonio

    2013-02-26

    The objective of this project is to close the efficiency gap between industrial multicrystalline silicon (mc-Si) and monocrystalline silicon solar cells, while preserving the economic advantage of low-cost, high-volume substrates inherent to mc-Si. Over the course of this project, we made significant progress toward this goal, as evidenced by the evolution in solar-cell efficiencies. While most of the benefits of university projects are diffuse in nature, several unique contributions can be traced to this project, including the development of novel characterization methods, defect-simulation tools, and novel solar-cell processing approaches mitigate the effects of iron impurities ("Impurities to Efficiency" simulator) and dislocations. In collaboration with our industrial partners, this project contributed to the development of cell processing recipes, specialty materials, and equipment that increased cell efficiencies overall (not just multicrystalline silicon). Additionally, several students and postdocs who were either partially or fully engaged in this project (as evidenced by the publication record) are currently in the PV industry, with others to follow.

  9. Uncooled amorphous-silicon technology: high-performance achievement and future trends

    NASA Astrophysics Data System (ADS)

    Mottin, Eric; Bain, Astrid; Martin, Jean-Luc; Ouvrier-Buffet, Jean-Louis; Yon, Jean-Jacques; Chatard, Jean-Pierre; Tissot, Jean-Luc

    2002-08-01

    The emergence of uncooled infrared detectors has opened new opportunities for IR imaging both for military and civil applications. Infrared imaging sensors that operate without cryogenic cooling have the potential to provide the military or civilian users with infrared vision capabilities packaged in a camera of extremely small size, weight and power. Uncooled infrared sensor technology has advanced rapidly in the past few years. Higher performance sensors, electronics integration at the sensor, and new concepts for signal processing are generating advanced infrared focal plane arrays. This would significantly reduce the cost and accelerate the implementation of sensors for applications such as surveillance or predictive maintenance. We present the uncooled infrared detector operation principle and the development at CEA/LETI from the 256 x 64 with a pitch of 50 micrometers to the 320 x 240 with a pitch of 35 micrometers . LETI has been involved in Amorphous Silicon uncooled microbolometer development since 1992. This silicon IR detection is now well mastered and matured so that industrial transfer of LETI technology was performed in 2000 towards Sofradir. Industrial production of 320 x 240 microbolometer array with 45micrometers pitch is then started., we present the readout circuit architectures designs and its evolution from the 256 x 64 array to the different version of 320 x 240 arrays. Electro-optical results obtained from these IRCMOS are presented. NEDT close to 30 mK is now obtained with our standard microbolometer amorphous silicon technology.

  10. Controlled Prelithiation of Silicon Monoxide for High Performance Lithium-Ion Rechargeable Full Cells.

    PubMed

    Kim, Hye Jin; Choi, Sunghun; Lee, Seung Jong; Seo, Myung Won; Lee, Jae Goo; Deniz, Erhan; Lee, Yong Ju; Kim, Eun Kyung; Choi, Jang Wook

    2016-01-13

    Despite the recent considerable progress, the reversibility and cycle life of silicon anodes in lithium-ion batteries are yet to be improved further to meet the commercial standards. The current major industry, instead, adopts silicon monoxide (SiOx, x ≈ 1), as this phase can accommodate the volume change of embedded Si nanodomains via the silicon oxide matrix. However, the poor Coulombic efficiencies (CEs) in the early period of cycling limit the content of SiOx, usually below 10 wt % in a composite electrode with graphite. Here, we introduce a scalable but delicate prelithiation scheme based on electrical shorting with lithium metal foil. The accurate shorting time and voltage monitoring allow a fine-tuning on the degree of prelithiation without lithium plating, to a level that the CEs in the first three cycles reach 94.9%, 95.7%, and 97.2%. The excellent reversibility enables robust full-cell operations in pairing with an emerging nickel-rich layered cathode, Li[Ni0.8Co0.15Al0.05]O2, even at a commercial level of initial areal capacity of 2.4 mAh cm(-2), leading to a full cell energy density 1.5-times as high as that of graphite-LiCoO2 counterpart in terms of the active material weight. PMID:26694703

  11. High performance continuous wave 1.3 μm quantum dot lasers on silicon

    SciTech Connect

    Liu, Alan Y. Norman, Justin; Zhang, Chong; Snyder, Andrew; Lubyshev, Dmitri; Fastenau, Joel M.; Liu, Amy W. K.; Gossard, Arthur C.; Bowers, John E.

    2014-01-27

    We demonstrate record performance 1.3 μm InAs quantum dot lasers grown on silicon by molecular beam epitaxy. Ridge waveguide lasers fabricated from the as-grown material achieve room temperature continuous wave thresholds as low as 16 mA, output powers exceeding 176 mW, and lasing up to 119 °C. P-modulation doping of the active region improves T{sub 0} to the range of 100–200 K while maintaining low thresholds and high output powers. Device yield is presented showing repeatable performance across different dies and wafers.

  12. Fatigue failure in thin-film polycrystalline silicon is due to subcritical cracking within the oxide layer

    NASA Astrophysics Data System (ADS)

    Alsem, D. H.; Stach, E. A.; Muhlstein, C. L.; Ritchie, R. O.

    2005-01-01

    It has been established that microelectromechanical systems created from polycrystalline silicon thin films are subject to cyclic fatigue. Prior work by the authors has suggested that although bulk silicon is not susceptible to fatigue failure in ambient air, fatigue in micron-scale silicon is a result of a "reaction-layer" process, whereby high stresses induce a thickening of the post-release oxide at stress concentrations such as notches, which subsequently undergoing moisture-assisted cracking. However, there exists some controversy regarding the post-release oxide thickness of the samples used in the prior study. In this letter, we present data from devices from a more recent fabrication run that confirm our prior observations. Additionally, new data from tests in high vacuum show that these devices do not fatigue when oxidation and moisture are suppressed. Each of these observations lends credence to the "reaction-layer" mechanism.

  13. Performance of in-pixel circuits for photon counting arrays (PCAs) based on polycrystalline silicon TFTs.

    PubMed

    Liang, Albert K; Koniczek, Martin; Antonuk, Larry E; El-Mohri, Youcef; Zhao, Qihua; Street, Robert A; Lu, Jeng Ping

    2016-03-01

    Photon counting arrays (PCAs), defined as pixelated imagers which measure the absorbed energy of x-ray photons individually and record this information digitally, are of increasing clinical interest. A number of PCA prototypes with a 1 mm pixel-to-pixel pitch have recently been fabricated with polycrystalline silicon (poly-Si)-a thin-film technology capable of creating monolithic imagers of a size commensurate with human anatomy. In this study, analog and digital simulation frameworks were developed to provide insight into the influence of individual poly-Si transistors on pixel circuit performance-information that is not readily available through empirical means. The simulation frameworks were used to characterize the circuit designs employed in the prototypes. The analog framework, which determines the noise produced by individual transistors, was used to estimate energy resolution, as well as to identify which transistors contribute the most noise. The digital framework, which analyzes how well circuits function in the presence of significant variations in transistor properties, was used to estimate how fast a circuit can produce an output (referred to as output count rate). In addition, an algorithm was developed and used to estimate the minimum pixel pitch that could be achieved for the pixel circuits of the current prototypes. The simulation frameworks predict that the analog component of the PCA prototypes could have energy resolution as low as 8.9% full width at half maximum (FWHM) at 70 keV; and the digital components should work well even in the presence of significant thin-film transistor (TFT) variations, with the fastest component having output count rates as high as 3 MHz. Finally, based on conceivable improvements in the underlying fabrication process, the algorithm predicts that the 1 mm pitch of the current PCA prototypes could be reduced significantly, potentially to between ~240 and 290 μm. PMID:26878107

  14. Performance of in-pixel circuits for photon counting arrays (PCAs) based on polycrystalline silicon TFTs

    NASA Astrophysics Data System (ADS)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Street, Robert A.; Lu, Jeng Ping

    2016-03-01

    Photon counting arrays (PCAs), defined as pixelated imagers which measure the absorbed energy of x-ray photons individually and record this information digitally, are of increasing clinical interest. A number of PCA prototypes with a 1 mm pixel-to-pixel pitch have recently been fabricated with polycrystalline silicon (poly-Si)—a thin-film technology capable of creating monolithic imagers of a size commensurate with human anatomy. In this study, analog and digital simulation frameworks were developed to provide insight into the influence of individual poly-Si transistors on pixel circuit performance—information that is not readily available through empirical means. The simulation frameworks were used to characterize the circuit designs employed in the prototypes. The analog framework, which determines the noise produced by individual transistors, was used to estimate energy resolution, as well as to identify which transistors contribute the most noise. The digital framework, which analyzes how well circuits function in the presence of significant variations in transistor properties, was used to estimate how fast a circuit can produce an output (referred to as output count rate). In addition, an algorithm was developed and used to estimate the minimum pixel pitch that could be achieved for the pixel circuits of the current prototypes. The simulation frameworks predict that the analog component of the PCA prototypes could have energy resolution as low as 8.9% full width at half maximum (FWHM) at 70 keV; and the digital components should work well even in the presence of significant thin-film transistor (TFT) variations, with the fastest component having output count rates as high as 3 MHz. Finally, based on conceivable improvements in the underlying fabrication process, the algorithm predicts that the 1 mm pitch of the current PCA prototypes could be reduced significantly, potentially to between ~240 and 290 μm.

  15. High-performance, low-voltage electroosmotic pumps with molecularly thin silicon nanomembranes.

    PubMed

    Snyder, Jessica L; Getpreecharsawas, Jirachai; Fang, David Z; Gaborski, Thomas R; Striemer, Christopher C; Fauchet, Philippe M; Borkholder, David A; McGrath, James L

    2013-11-12

    We have developed electroosmotic pumps (EOPs) fabricated from 15-nm-thick porous nanocrystalline silicon (pnc-Si) membranes. Ultrathin pnc-Si membranes enable high electroosmotic flow per unit voltage. We demonstrate that electroosmosis theory compares well with the observed pnc-Si flow rates. We attribute the high flow rates to high electrical fields present across the 15-nm span of the membrane. Surface modifications, such as plasma oxidation or silanization, can influence the electroosmotic flow rates through pnc-Si membranes by alteration of the zeta potential of the material. A prototype EOP that uses pnc-Si membranes and Ag/AgCl electrodes was shown to pump microliter per minute-range flow through a 0.5-mm-diameter capillary tubing with as low as 250 mV of applied voltage. This silicon-based platform enables straightforward integration of low-voltage, on-chip EOPs into portable microfluidic devices with low back pressures. PMID:24167263

  16. High performance uncooled amorphous silicon VGA IRFPA with 17-µm pixel-pitch

    NASA Astrophysics Data System (ADS)

    Tissot, J. L.; Durand, A.; Garret, Th.; Minassian, C.; Robert, P.; Tinnes, S.; Vilain, M.

    2010-04-01

    The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon enables ULIS to develop VGA IRFPA formats with 17μm pixel-pitch to build up the currently available product catalog. This detector keeps all the innovations developed on the 25 μm pixel-pitch ROIC (detector configuration by serial link, low power consumption and wide electrical dynamic range). The specific appeal of this unit lies in the high spatial resolution it provides. The reduction of the pixel-pitch turns this TEC-less VGA array into a product well adapted for high resolution and compact systems. In the last part of the paper, we will look more closely at the high electro-optical performances of this IRFPA and the rapid performance enhancement. We will insist on NETD trade-off with wide thermal dynamic range, as well as the high characteristics uniformity, achieved thanks to the mastering of the amorphous silicon technology coupled with the ROIC design. This technology node paves the way to high end products as well as low end compact smaller formats like 160 x 120 or smaller.

  17. High-performance, low-voltage electroosmotic pumps with molecularly thin silicon nanomembranes

    PubMed Central

    Snyder, Jessica L.; Getpreecharsawas, Jirachai; Fang, David Z.; Gaborski, Thomas R.; Striemer, Christopher C.; Fauchet, Philippe M.; Borkholder, David A.; McGrath, James L.

    2013-01-01

    We have developed electroosmotic pumps (EOPs) fabricated from 15-nm-thick porous nanocrystalline silicon (pnc-Si) membranes. Ultrathin pnc-Si membranes enable high electroosmotic flow per unit voltage. We demonstrate that electroosmosis theory compares well with the observed pnc-Si flow rates. We attribute the high flow rates to high electrical fields present across the 15-nm span of the membrane. Surface modifications, such as plasma oxidation or silanization, can influence the electroosmotic flow rates through pnc-Si membranes by alteration of the zeta potential of the material. A prototype EOP that uses pnc-Si membranes and Ag/AgCl electrodes was shown to pump microliter per minute-range flow through a 0.5-mm-diameter capillary tubing with as low as 250 mV of applied voltage. This silicon-based platform enables straightforward integration of low-voltage, on-chip EOPs into portable microfluidic devices with low back pressures. PMID:24167263

  18. Design and fabrication of high performance wafer-level vacuum packaging based on glass-silicon-glass bonding techniques

    NASA Astrophysics Data System (ADS)

    Zhang, Jinwen; Jiang, Wei; Wang, Xin; Zhou, Jilong; Yang, Huabing

    2012-12-01

    In this paper, a high performance wafer-level vacuum packaging technology based on GSG triple-layer sealing structure for encapsulating large mass inertial MEMS devices fabricated by silicon-on-glass bulk micromachining technology is presented. Roughness controlling strategy of bonding surfaces was proposed and described in detail. Silicon substrate was thinned and polished by CMP after the first bonding with the glass substrate and was then bonded with the glass micro-cap. Zr thin film was embedded into the concave of the micro-cap by a shadow-mask technique. The glass substrate was thinned to about 100 µm, wet etched through and metalized for realizing vertical feedthrough. During the fabrication, all patterning processes were operated carefully so as to reduce extrusive fragments to as little as possible. In addition, a high-performance micro-Pirani vacuum gauge was integrated into the package for monitoring the pressure and the leak rate further. The result shows that the pressure in the package is about 120 Pa and has no obvious change for more than one year indicating 10-13 stdcc s-1 leak rate.

  19. High-performance terahertz wave absorbers made of silicon-based metamaterials

    SciTech Connect

    Yin, Sheng; Zhu, Jianfei; Jiang, Wei; Yuan, Jun; Yin, Ge; Ma, Yungui; Xu, Wendao; Xie, Lijuan; Ying, Yibin

    2015-08-17

    Electromagnetic (EM) wave absorbers with high efficiency in different frequency bands have been extensively investigated for various applications. In this paper, we propose an ultra-broadband and polarization-insensitive terahertz metamaterial absorber based on a patterned lossy silicon substrate. Experimentally, a large absorption efficiency more than 95% in a frequency range of 0.9–2.5 THz was obtained up to a wave incident angle as large as 70°. Much broader absorption bandwidth and excellent oblique incidence absorption performance are numerically demonstrated. The underlying mechanisms due to the combination of a waveguide cavity mode and impedance-matched diffraction are analyzed in terms of the field patterns and the scattering features. The monolithic THz absorber proposed here may find important applications in EM energy harvesting systems such as THz barometer or biosensor.

  20. High-performance terahertz wave absorbers made of silicon-based metamaterials

    NASA Astrophysics Data System (ADS)

    Yin, Sheng; Zhu, Jianfei; Xu, Wendao; Jiang, Wei; Yuan, Jun; Yin, Ge; Xie, Lijuan; Ying, Yibin; Ma, Yungui

    2015-08-01

    Electromagnetic (EM) wave absorbers with high efficiency in different frequency bands have been extensively investigated for various applications. In this paper, we propose an ultra-broadband and polarization-insensitive terahertz metamaterial absorber based on a patterned lossy silicon substrate. Experimentally, a large absorption efficiency more than 95% in a frequency range of 0.9-2.5 THz was obtained up to a wave incident angle as large as 70°. Much broader absorption bandwidth and excellent oblique incidence absorption performance are numerically demonstrated. The underlying mechanisms due to the combination of a waveguide cavity mode and impedance-matched diffraction are analyzed in terms of the field patterns and the scattering features. The monolithic THz absorber proposed here may find important applications in EM energy harvesting systems such as THz barometer or biosensor.

  1. A multilayered silicon-reduced graphene oxide electrode for high performance lithium-ion batteries.

    PubMed

    Gao, Xianfeng; Li, Jianyang; Xie, Yuanyuan; Guan, Dongsheng; Yuan, Chris

    2015-04-22

    A multilayered structural silicon-reduced graphene oxide electrode with superior electrochemical performance was synthesized from bulk Si particles through inexpensive electroless etching and graphene self-encapsulating approach. The prepared composite electrode presents a stable charge-discharge performance with high rate, showing a reversible capacity of 2787 mAh g(-1) at a charging rate of 100 mA g(-1), and a stable capacity over 1000 mAh g(-1) was retained at 1 A g(-1) after 50 cycles with a high columbic efficiency of 99% during the whole cycling process. This superior performance can be attributed to its novel multilayered structure with porous Si particles encapsulated, which can effectively accommodate the large volume change during the lithiation process and provide increased electrical conductivity. This facile low-cost approach offers a promising route to develop an optimized carbon encapsulated Si electrode for future industrial applications. PMID:25826636

  2. A high-performance broadband terahertz absorber based on sawtooth-shape doped-silicon

    NASA Astrophysics Data System (ADS)

    Du, Liang-Hui; Li, Jiang; Zhai, Zhao-Hui; Meng, Kun; Liu, Qiao; Zhong, Sen-Cheng; Zhou, Ping-Wei; Zhu, Li-Guo; Li, Ze-Ren; Peng, Qi-Xian

    2016-05-01

    Perfect absorbers with broadband absorption of terahertz (THz) radiation are promising for applications in imaging and detection to enhance the contrast and sensitivity, as well as to provide concealment. Different from previous two-dimensional structures, here we put forward a new type of THz absorber based on sawtooth-shape doped-silicon with near-unit absorption across a broad spectral range. Absorbance over 99% is observed numerically from 1.2 to 3 THz by optimizing the geometric parameters of the sawtooth structure. Our absorbers can operate over a wide range of incident angle and are polarization insensitive. The underlying mechanisms due to the combination of an air-cavity mode and mode-matching resonance on the air-sawtooth interface are analyzed in terms of the field patterns and electromagnetic power loss features.

  3. High-performance hybrid organic-inorganic solar cell based on planar n-type silicon

    SciTech Connect

    Chi, Dan; Qi, Boyuan; Wang, Jizheng; Qu, Shengchun Wang, Zhanguo

    2014-05-12

    Hybrid organic-inorganic solar cells were fabricated by spin coating the hole transporting conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film on n-type crystalline silicon (n-Si). By incorporating different additives into the PEDOT:PSS, the conductivity and wettability of PEDOT:PSS film are markedly improved, and the device performance is greatly enhanced accordingly. To further optimize the device performance, poly(3-hexylthiophene) (P3HT) layer was inserted between the n-Si and PEDOT:PSS layer. The P3HT layer blocks electrons from diffusing to the PEDOT:PSS, and hence reduces recombination at the anode side. The device eventually exhibits a high power conversion efficiency of 11.52%.

  4. High-Performance Silicon Battery Anodes Enabled by Engineering Graphene Assemblies.

    PubMed

    Zhou, Min; Li, Xianglong; Wang, Bin; Zhang, Yunbo; Ning, Jing; Xiao, Zhichang; Zhang, Xinghao; Chang, Yanhong; Zhi, Linjie

    2015-09-01

    We propose a novel material/electrode design formula and develop an engineered self-supporting electrode configuration, namely, silicon nanoparticle impregnated assemblies of templated carbon-bridged oriented graphene. We have demonstrated their use as binder-free lithium-ion battery anodes with exceptional lithium storage performances, simultaneously attaining high gravimetric capacity (1390 mAh g(-1) at 2 A g(-1) with respect to the total electrode weight), high volumetric capacity (1807 mAh cm(-3) that is more than three times that of graphite anodes), remarkable rate capability (900 mAh g(-1) at 8 A g(-1)), excellent cyclic stability (0.025% decay per cycle over 200 cycles), and competing areal capacity (as high as 4 and 6 mAh cm(-2) at 15 and 3 mA cm(-2), respectively). Such combined level of performance is attributed to the templated carbon bridged oriented graphene assemblies involved. This engineered graphene bulk assemblies not only create a robust bicontinuous network for rapid transport of both electrons and lithium ions throughout the electrode even at high material mass loading but also allow achieving a substantially high material tap density (1.3 g cm(-3)). Coupled with a simple and flexible fabrication protocol as well as practically scalable raw materials (e.g., silicon nanoparticles and graphene oxide), the material/electrode design developed would propagate new and viable battery material/electrode design principles and opportunities for energy storage systems with high-energy and high-power characteristics. PMID:26308100

  5. Characterization of high performance silicon-based VMJ PV cells for laser power transmission applications

    NASA Astrophysics Data System (ADS)

    Perales, Mico; Yang, Mei-huan; Wu, Cheng-liang; Hsu, Chin-wei; Chao, Wei-sheng; Chen, Kun-hsien; Zahuranec, Terry

    2016-03-01

    Continuing improvements in the cost and power of laser diodes have been critical in launching the emerging fields of power over fiber (PoF), and laser power beaming. Laser power is transmitted either over fiber (for PoF), or through free space (power beaming), and is converted to electricity by photovoltaic cells designed to efficiently convert the laser light. MH GoPower's vertical multi-junction (VMJ) PV cell, designed for high intensity photovoltaic applications, is fueling the emergence of this market, by enabling unparalleled photovoltaic receiver flexibility in voltage, cell size, and power output. Our research examined the use of the VMJ PV cell for laser power transmission applications. We fully characterized the performance of the VMJ PV cell under various laser conditions, including multiple near IR wavelengths and light intensities up to tens of watts per cm2. Results indicated VMJ PV cell efficiency over 40% for 9xx nm wavelengths, at laser power densities near 30 W/cm2. We also investigated the impact of the physical dimensions (length, width, and height) of the VMJ PV cell on its performance, showing similarly high performance across a wide range of cell dimensions. We then evaluated the VMJ PV cell performance within the power over fiber application, examining the cell's effectiveness in receiver packages that deliver target voltage, intensity, and power levels. By designing and characterizing multiple receivers, we illustrated techniques for packaging the VMJ PV cell for achieving high performance (> 30%), high power (> 185 W), and target voltages for power over fiber applications.

  6. High Performance Separation of Nanoparticles with Ultrathin Porous Nanocrystalline Silicon Membranes

    PubMed Central

    Gaborski, Thomas R.; Snyder, Jessica L.; Striemer, Christopher C.; Fang, David Z.; Hoffman, Michael; Fauchet, Philippe M.; McGrath, James L.

    2012-01-01

    Porous nanocrystalline silicon (pnc-Si) is a 15 nm thin freestanding membrane material with applications in small-scale separations, biosensors, cell culture and lab-on-a-chip devices. Pnc-Si has already been shown to exhibit high permeability to diffusing species and selectivity based on molecular size or charge. In this report we characterize properties of pnc-Si in pressurized flows. We compare results to long-standing theories for transport through short pores using actual pore distributions obtained directly from electron micrographs. Measurements are in agreement with theory over a wide range of pore sizes and porosities and at orders-of-magnitude higher than those exhibited by commercial ultrafiltration and experimental carbon nanotube membranes. We also show that pnc-Si membranes can be used in dead-end filtration to fractionate gold nanoparticles and protein size ladders with better than 5 nm resolution, insignificant sample loss, and little dilution of the filtrate. These performance characteristics, combined with scalable manufacturing, make pnc-Si filtration a straightforward solution to many nanoparticle and biological separation problems. PMID:21043434

  7. Silicon/copper dome-patterned electrodes for high-performance hybrid supercapacitors

    PubMed Central

    Liu, Xuyan; Jung, Hun-Gi; Kim, Sang-Ok; Choi, Ho-Suk; Lee, Sangwha; Moon, Jun Hyuk; Lee, Joong Kee

    2013-01-01

    This study proposes a method for manufacturing high-performance electrode materials in which controlling the shape of the current collector and electrode material for a Li-ion capacitor (LIC). In particular, the proposed LIC manufacturing method maintains the high voltage of a cell by using a microdome-patterned electrode material, allowing for reversible reactions between the Li-ion and the active material for an extended period of time. As a result, the LICs exhibit initial capacities of approximately 42 F g−1, even at 60 A g−1. The LICs also exhibit good cycle performance up to approximately 15,000 cycles. In addition, these advancements allow for a considerably higher energy density than other existing capacitor systems. The energy density of the proposed LICs is approximately nine, two, and 1.5 times higher than those of the electrochemical double layer capacitor (EDLC), AC/LiMn2O4 hybrid capacitor, and intrinsic Si/AC LIC, respectively. PMID:24292725

  8. Breakdown-induced thermochemical reactions in HfO2 high-κ/polycrystalline silicon gate stacks

    NASA Astrophysics Data System (ADS)

    Ranjan, R.; Pey, K. L.; Tung, C. H.; Tang, L. J.; Ang, D. S.; Groeseneken, G.; De Gendt, S.; Bera, L. K.

    2005-12-01

    The chemistry of dielectric-breakdown-induced microstructural changes in HfO2 high-κ/polycrystalline silicon gate nMOSFETs under constant voltage stress has been studied. Based on an electron energy loss spectrometry analysis, the hafnium and oxygen chemical bonding in the breakdown induced Hf-based compounds of a "ball-shaped" defect is found to be different compared to the stoichiometric HfO2 and SiO2. The formation of possibly HfSixOy and HfSix compounds in the "ball-shaped" defect is attributed to a thermochemical reaction triggered by the gate dielectric breakdown.

  9. High-Performance Silicon-Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

    NASA Astrophysics Data System (ADS)

    Romanjek, K.; Vesin, S.; Aixala, L.; Baffie, T.; Bernard-Granger, G.; Dufourcq, J.

    2015-06-01

    Some of the energy used in transportation and industry is lost as heat, often at high-temperatures, during conversion processes. Thermoelectricity enables direct conversion of heat into electricity, and is an alternative to the waste-heat-recovery technology currently used, for example turbines and other types of thermodynamic cycling. The performance of thermoelectric (TE) materials and modules has improved continuously in recent decades. In the high-temperature range ( T hot side > 500°C), silicon-germanium (SiGe) alloys are among the best TE materials reported in the literature. These materials are based on non-toxic elements. The Thermoelectrics Laboratory at CEA (Commissariat à l'Energie Atomique et aux Energies Alternatives) has synthesized n and p-type SiGe pellets, manufactured TE modules, and integrated these into thermoelectric generators (TEG) which were tested on a dedicated bench with hot air as the source of heat. SiGe TE samples of diameter 60 mm were created by spark-plasma sintering. For n-type SiGe doped with phosphorus the peak thermoelectric figure of merit reached ZT = 1.0 at 700°C whereas for p-type SiGe doped with boron the peak was ZT = 0.75 at 700°C. Thus, state-of-the-art conversion efficiency was obtained while also achieving higher production throughput capacity than for competing processes. A standard deviation <4% in the electrical resistance of batches of ten pellets of both types was indicative of high reproducibility. A silver-paste-based brazing technique was used to assemble the TE elements into modules. This assembly technique afforded low and repeatable electrical contact resistance (<3 nΩ m2). A test bench was developed for measuring the performance of TE modules at high temperatures (up to 600°C), and thirty 20 mm × 20 mm TE modules were produced and tested. The results revealed the performance was reproducible, with power output reaching 1.9 ± 0.2 W for a 370 degree temperature difference. When the temperature

  10. Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids

    NASA Astrophysics Data System (ADS)

    Lorenzi, B.; Narducci, D.; Tonini, R.; Frabboni, S.; Gazzadi, G. C.; Ottaviani, G.; Neophytou, N.; Zianni, X.

    2014-10-01

    Hole-containing silicon has been regarded as a viable candidate thermoelectric material because of its low thermal conductivity. However, because voids are efficient scattering centers not just for phonons but also for charge carriers, achievable power factors (PFs) are normally too low for its most common form, i.e. porous silicon, to be of practical interest. In this communication we report that high PFs can, indeed, be achieved with nanoporous structures obtained from highly doped silicon. High PFs, up to a huge 22 mW K-2 m-1 (more than six times higher than values for the bulk material), were observed for heavily boron-doped nanocrystalline silicon films in which nanovoids (NVs) were generated by He+ ion implantation. In contrast with single-crystalline silicon in which He+ implantation leads to large voids, in polycrystalline films implantation followed by annealing at 1000°C results in homogeneous distribution of NVs with final diameters of approximately 2 nm and densities of the order of 1019 cm-3 with average spacing of 10 nm. Study of its morphology revealed silicon nanograins 50 nm in diameter coated with 5-nm precipitates of SiB x . We recently reported that PFs up to 15 mW K-2 m-1 could be achieved for silicon-boron nanocomposites (without NVs) because of a simultaneous increase of electrical conductivity and Seebeck coefficient. In that case, the high Seebeck coefficient was achieved as a result of potential barriers on the grain boundaries, and high electrical conductivity was achieved as a result of extremely high levels of doping. The additional increase in the PF observed in the presence of NVs (which also include SiB x precipitates) might have several possible explanations; these are currently under investigation. Experimental results are reported which might clarify the reason for this paradoxical effect of NVs on silicon PF.

  11. Atmospheric Pressure Micro-Thermal-Plasma-Jet Crystallization of Amorphous Silicon Strips for High-Performance Thin Film Transistor Fabrication

    NASA Astrophysics Data System (ADS)

    Morisaki, Seiji; Nakatani, Taichi; Shin, Ryota; Higashi, Seiichiro

    2015-09-01

    Zone melting recrystallization (ZMR) of amorphous silicon (a-Si) strips by micro-thermal-plasma-jet (u-TPJ) irradiation is quite effective to suppress grain boundaries (GBs) except sigma 3 coincidence site lattice (CSL). Intra-grain defects in 1 μm wide strips were significantly reduced by suppressing the agglomeration of molten Si with low temperature condition around melting point of crystalline Si. Thin film transistors (TFTs), using optimized ZMR condition by scanning speed of 1500 mm/s demonstrated extremely high performance with field effect mobility (uFE) of 443 cm2/Vs and swing factor (S) of 210 mV/dec. Part of this work was supported by the Research Institute for Nanodevice and Bio Systems (RNBS), Hiroshima University.

  12. High-performance uncooled amorphous silicon TEC less XGA IRFPA with 17μm pixel-pitch

    NASA Astrophysics Data System (ADS)

    Trouilleau, C.; Fièque, B.; Noblet, S.; Giner, F.; Pochic, D.; Durand, A.; Robert, P.; Cortial, S.; Vilain, M.; Tissot, J. L.; Yon, J. J.

    2009-05-01

    The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon enables ULIS to develop 1024 x 768 (XGA) IRFPA formats with 17μm pixel-pitch to address high end, high performance applications. This detector has kept all the innovations developed on the full TV format readout integrated circuit (ROIC): detector configuration by serial link, two video outputs, low power consumption, wide electrical dynamic range... The specific appeal of this unit lies in the high image resolution it provides. The reduction of the pixel-pitch turns this XGA array into a product well adapted for high resolution yet compact systems. In the last part of the paper, we will look more closely at the high electro-optical performances of this IRFPA and the rapid performance enhancement. We will insist on NETD coupled with wide thermal dynamic range, as well as the outstanding uniformity and high pixel operability, achieved thanks to the mastering of the amorphous silicon technology coupled with the ROIC design. This technology node paves the way to high end VGA or 1/4VGA sensors as well as large diffusion compact smaller formats like 160 x 120 or smaller.

  13. Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

    NASA Astrophysics Data System (ADS)

    Liu, Yongxun; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Masahara, Meishoku

    2014-01-01

    Three-dimensional (3D) fin-channel charge trapping (CT) flash memories with different gate materials of physical-vapor-deposited (PVD) titanium nitride (TiN) and n+-polycrystalline silicon (poly-Si) have successfully been fabricated by using (100)-oriented silicon-on-insulator (SOI) wafers and orientation-dependent wet etching. Electrical characteristics of the fabricated flash memories including statistical threshold voltage (Vt) variability, endurance, and data retention have been comparatively investigated. It was experimentally found that a larger memory window and a deeper erase are obtained in PVD-TiN-gated metal-oxide-nitride-oxide-silicon (MONOS)-type flash memories than in poly-Si-gated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type memories. The larger memory window and deeper erase of MONOS-type flash memories are contributed by the higher work function of the PVD-TiN metal gate than of the n+-poly-Si gate, which is effective for suppressing electron back tunneling during erase operation. It was also found that the initial Vt roll-off due to the short-channel effect (SCE) is directly related to the memory window roll-off when the gate length (Lg) is scaled down to 46 nm or less.

  14. Very high-cycle fatigue failure in micron-scale polycrystalline silicon films: Effects of environment and surface oxide thickness

    NASA Astrophysics Data System (ADS)

    Alsem, D. H.; Timmerman, R.; Boyce, B. L.; Stach, E. A.; De Hosson, J. Th. M.; Ritchie, R. O.

    2007-01-01

    Fatigue failure in micron-scale polycrystalline silicon structural films, a phenomenon that is not observed in bulk silicon, can severely impact the durability and reliability of microelectromechanical system devices. Despite several studies on the very high-cycle fatigue behavior of these films (up to 1012cycles), there is still an on-going debate on the precise mechanisms involved. We show here that for devices fabricated in the multiuser microelectromechanical system process (MUMPs) foundry and Sandia Ultra-planar, Multi-level MEMS Technology (SUMMiT V™) process and tested under equi-tension/compression loading at ˜40kHz in different environments, stress-lifetime data exhibit similar trends in fatigue behavior in ambient room air, shorter lifetimes in higher relative humidity environments, and no fatigue failure at all in high vacuum. The transmission electron microscopy of the surface oxides in the test samples shows a four- to sixfold thickening of the surface oxide at stress concentrations after fatigue failure, but no thickening after overload fracture in air or after fatigue cycling in vacuo. We find that such oxide thickening and premature fatigue failure (in air) occur in devices with initial oxide thicknesses of ˜4nm (SUMMiT V™) as well as in devices with much thicker initial oxides ˜20nm (MUMPs). Such results are interpreted and explained by a reaction-layer fatigue mechanism. Specifically, moisture-assisted subcritical cracking within a cyclic stress-assisted thickened oxide layer occurs until the crack reaches a critical size to cause catastrophic failure of the entire device. The entirety of the evidence presented here strongly indicates that the reaction-layer fatigue mechanism is the governing mechanism for fatigue failure in micron-scale polycrystalline silicon thin films.

  15. Ultratough, Thermally Stable Polycrystalline Diamond/Silicon Carbide Nanocomposites for Drill Bits

    SciTech Connect

    2009-03-01

    This factsheet describes a research project whose goal is to develop and produce in quantity novel superhard and ultratough thermally stable polycrystalline (TSP) diamond/SiC nanocomposites reinforced with SiC/C nanofibers for drill-bit applications and multiple industrial functions.

  16. A method for polycrystalline silicon delineation applicable to a double-diffused MOS transistor

    NASA Technical Reports Server (NTRS)

    Halsor, J. L.; Lin, H. C.

    1974-01-01

    Method is simple and eliminates requirement for unreliable special etchants. Structure is graded in resistivity to prevent punch-through and has very narrow channel length to increase frequency response. Contacts are on top to permit planar integrated circuit structure. Polycrystalline shield will prevent creation of inversion layer in isolated region.

  17. An effective approach for restraining electrochemical corrosion of polycrystalline silicon caused by an HF-based solution and its application for mass production of MEMS devices

    NASA Astrophysics Data System (ADS)

    Liu, Yunfei; Xie, Jing; Zhao, Hui; Luo, Wei; Yang, Jinling; An, Ji; Yang, Fuhua

    2012-03-01

    This paper presents a novel method to effectively protect the structural material polycrystalline silicon (polysilicon) from electrochemical corrosion, which often occurs when the MEMS device is released in HF-based solutions, especially when the device contains a noble metal. This corrosion seriously degrades the electrical and mechanical performance as well as the reliability of MEMS devices. In this method, a photoresist (PR) is employed to cover the noble metal, which is electrically coupled with the underlying polysilicon layer. This PR cover can effectually prevent an HF-based solution from diffusing through and arriving at the surface of the noble metal, thus cutting off the electrical current of the electrochemical corrosion reaction. The polysilicon is well protected for longer than 80 min in 49% concentrated HF solutions by a 3 µm-thick AZ 6130 PR film. This fabrication process is simple, reliable and suitable for mass production of high-end micromechanical disk resonators. Benefiting from the technology breakthrough mentioned above, a novel low-cost microfabrication method for disk resonators with high performance has been developed, and the VHF polysilicon disk resonators with resonance frequencies around 282 MHz and Q values larger than 2000 at atmosphere have been produced at wafer level.

  18. Inks for Ink Jet Printed Contacts for High Performance Silicon Solar Cells: Cooperative Research and Development Final Report, CRADA No. CRD-06-199

    SciTech Connect

    Ginley, D.

    2013-01-01

    The work under the proposed CRADA will be a joint effort by BP Solar and NREL to develop new types of high performance inks for high quality contacts to silicon solar cells. NREL will develop inks that have electronic properties that will allow the formation of high quality ohmic contacts to n- and p-type crystalline silicon, and BP Solar will evaluate these contacts in test contact structures.

  19. Production of polycrystalline silicon from monosilane in the electron-beam plasma

    SciTech Connect

    Konstantinov, V. O.; Shchukin, V. G.; Sharafutdinov, R. G.; Karsten, V. M.; Gartvich, G. G.; Semenova, O. I.

    2010-12-15

    The results of experimental studies concerned with deposition of solar-grade silicon from monosilane in the electron-beam plasma are reported. With the laboratory equipment, the silicon deposition rate attains up to 40 g h{sup -1} at the expenditure of energy for the process 78 kW h kg{sup -1} and the efficiency of conversion of monosilane into silicon at about 50%. Analysis of the chemical composition of the resulting material shows that the material fits the requirements imposed on solar-grade silicon. The method suggested in the study holds promise in industrial-scale applications.

  20. Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

    NASA Astrophysics Data System (ADS)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

    2014-03-01

    The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

  1. Nanophotonic light trapping in polycrystalline silicon thin-film solar cells using periodically nanoimprint-structured glass substrates

    NASA Astrophysics Data System (ADS)

    Becker, Christiane; Xavier, Jolly; Preidel, Veit; Wyss, Philippe; Sontheimer, Tobias; Rech, Bernd; Probst, Jürgen; Hülsen, Christoph; Löchel, Bernd; Erko, Alexei; Burger, Sven; Schmidt, Frank; Back, Franziska; Rudigier-Voigt, Eveline

    2013-09-01

    A smart light trapping scheme is essential to tap the full potential of polycrystalline silicon (poly-Si) thin-film solar cells. Periodic nanophotonic structures are of particular interest as they allow to substantially surpass the Lambertian limit from ray optics in selected spectral ranges. We use nanoimprint-lithography for the periodic patterning of sol-gel coated glass substrates, ensuring a cost-effective, large-area production of thin-film solar cell devices. Periodic crystalline silicon nanoarchitectures are prepared on these textured substrates by high-rate silicon film evaporation, solid phase crystallization and chemical etching. Poly-Si microhole arrays in square lattice geometry with an effective thickness of about 2μm and with comparatively large pitch (2 μm) exhibit a large absorption enhancement (A900nm = 52%) compared to a planar film (A900nm ~ 7%). For the optimization of light trapping in the desired spectral region, the geometry of the nanophotonic structures with varying pitch from 600 nm to 800 nm is tailored and investigated for the cases of poly-Si nanopillar arrays of hexagonal lattice geometry, exhibiting an increase in absorption in comparison to planar film attributed to nanophotonic wave optic effects. These structures inspire the design of prospective applications such as highly-efficient nanostructured poly-Si thin-film solar cells and large-area photonic crystals.

  2. Vacuum deposited polycrystalline silicon films for solar cell applications. Second quarterly technical progress report. January 1-March 31, 1980

    SciTech Connect

    Feldman, C.; Arlington, III, C. H.; Blum, N. A.; Satkiewicz, F. G.

    1980-05-01

    A careful study of a specially formed thin silicon layer on TiB/sub 2/-coated sapphire reveals that the interaction layer of TiSi/sub 2/ is composed of larger grains. Processing steps were developed which lead closer to the goal of fabricating polycrystalline silicon photovoltaic devices completely by vacuum deposition. Both n-type and p-type silicon are now being deposited. New deposition masks were made for depositing the n-regions upon the p-layers. New electrode deposition masks were also made for a direct electroding process to replace the photolithographic process used previously. The TiB/sub 2/ bottom electrode fabrication has been achieved in a single vacuum chamber. Reaction constants and activation energy for TiB/sub 2/ layer formation were determined to be less than those reported by other authors for bulk material. Studies of crystallite growth and interfacial interactions have continued. Major sources of undesirable impurities have been identified and removed from the vacuum chambers. The changes made this quarter have not been incorporated into a completed photovoltaic device.

  3. Rapid recovery of polycrystalline silicon from kerf loss slurry using double-layer organic solvent sedimentation method

    NASA Astrophysics Data System (ADS)

    Xing, Peng-fei; Guo, Jing; Zhuang, Yan-xin; Li, Feng; Tu, Gan-feng

    2013-10-01

    The rapid development of photovoltaic (PV) industries has led to a shortage of silicon feedstock. However, more than 40% silicon goes into slurry wastes due to the kerf loss in the wafer slicing process. To effectively recycle polycrystalline silicon from the kerf loss slurry, an innovative double-layer organic solvent sedimentation process was presented in the paper. The sedimentation velocities of Si and SiC particles in some organic solvents were investigated. Considering the polarity, viscosity, and density of solvents, the chloroepoxy propane and carbon tetrachloride were selected to separate Si and SiC particles. It is found that Si and SiC particles in the slurry waste can be successfully separated by the double-layer organic solvent sedimentation method, which can greatly reduce the sedimentation time and improve the purity of obtained Si-rich and SiC-rich powders. The obtained Si-rich powders consist of 95.04% Si, and the cast Si ingot has 99.06% Si.

  4. Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Hattori, Shuji; Okada, Tsunenori; Buckley, Donald H.

    1987-01-01

    An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in the SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.

  5. Fatigue of polycrystalline silicon for MEMS applications: Crack growth and stability under resonant loading conditions

    SciTech Connect

    Muhlstein, C.L.; Howe, R.T.; Ritchie, R.O.

    2001-12-05

    Although bulk silicon is not known to exhibit susceptibility to cyclic fatigue, micron-scale structures made from silicon films are known to be vulnerable to degradation by fatigue in ambient air environments, a phenomenon that has been recently modeled in terms of a mechanism of sequential oxidation and stress-corrosion cracking of the native oxide layer.

  6. Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical applications

    SciTech Connect

    Muhlstein, C.L.; Stach, E.A.; Ritchie, R.O.

    2001-08-02

    Reported nearly a decade ago, cyclic fatigue failure in silicon thin films has remained a mystery. Silicon does not display the room temperature plasticity or extrinsic toughening mechanisms necessary to cause fatigue in either ductile (e.g., metals) or brittle (e.g., ceramics and ordered mintermetallic) materials.

  7. Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Semiannual technical report, 1 January 1996--30 June 1996

    SciTech Connect

    Wohlgemuth, J

    1997-01-01

    Two specific objectives of Solarex`s program are to reduce the manufacturing cost for polycrystalline silicon photovoltaic modules to less than $1.20/watt and to increase the manufacturing capacity by a factor of three. This report highlights accomplishments during the period of January 1 through June 30, 1996. Accomplishments include: began the conversion of production casting stations to increase ingot size; operated the wire saw in a production mode with higher yields and lower costs than achieved on the ID saws; developed and qualified a new wire guide coating material that doubles the wire guide lifetime and produces significantly less scatter in wafer thickness; completed a third pilot run of the cost-effective Al paste back-surface-field (BSF) process, verifying a 5% increase in cell efficiency and demonstrating the ability to process and handle the BSF paste cells; completed environmental qualification of modules using cells produced by an all-print metallization process; optimized the design of the 15.2-cm by 15.2-cm polycrystalline silicon solar cells; demonstrated the application of a high-efficiency process in making 15.2-cm by 15.2-cm solar cells; demonstrated that cell efficiency increases with decreasing wafer thickness for the Al paste BSF cells; qualified a vendor-supplied Tedlar/ethylene vinyl acetate (EVA) laminate to replace the combination of separate sheets of EVA and Tedlar backsheet; demonstrated the operation of a prototype unit to trim/lead attach/test modules; and demonstrated the operation of a wafer pull-down system for cassetting wet wafers.

  8. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

    SciTech Connect

    Wohlgemuth, J.; Narayanan, M.

    2006-07-01

    The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

  9. Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering

    PubMed Central

    Yen, Li-Chen; Tang, Ming-Tsyr; Chang, Fang-Yu; Pan, Tung-Ming; Chao, Tien-Sheng; Lee, Chiang-Hsuan

    2014-01-01

    In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H2 sintering exhibited a high sensitivity than that without H2 sintering. This result may be due to the resulting increase in the number of Si–OH2+ and Si–O− bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems. PMID:24573308

  10. Improvement in pH sensitivity of low-temperature polycrystalline-silicon thin-film transistor sensors using H2 sintering.

    PubMed

    Yen, Li-Chen; Tang, Ming-Tsyr; Chang, Fang-Yu; Pan, Tung-Ming; Chao, Tien-Sheng; Lee, Chiang-Hsuan

    2014-01-01

    In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H2 sintering exhibited a high sensitivity than that without H2 sintering. This result may be due to the resulting increase in the number of Si-OH2(+) and Si-O(-) bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems. PMID:24573308

  11. Thin film polycrystalline silicon solar cells. Second technical progress report, July 16, 1980-October 15, 1980

    SciTech Connect

    1980-10-01

    The objectives of this contract are to fabricate large area thin film silicon solar cells with AM1 efficiency of 10% or greater with good reproducibility and good yield and to assess the feasibility of implementing this process for manufacturing solar cells at a cost of $300/kWe. Efforts have been directed to the purification of metallurgical silicon, the preparation and characterization of substrates and epitaxial silicon layers, and the fabrication and characterization of solar cells. The partial purification of metallurgical silicon by extraction with aqua regia has been further investigated in detail, and the resulting silicon was analyzed by the atomic absorption technique. The unidirectional solidification of aqua regia-extracted metallurgical silicon on graphite was used for the preparation of substrates, and the impurity distribution in the substrate was determined and compared with the impurity content in metallurgical silicon. The effects of heat treatment on the impurity distribution in the substrate and in the epitaxial layer have also been investigated. Large area (30 to 60 cm/sup 2/) solar cells have been prepared from aqua regia-extracted metallurgical silicon substrates by depositing a p-n junction structure using the thermal reduction of trichlorosilane containing appropriate dopants. The AM1 efficiencies are about 9% for cells of 30 to 35 cm/sup 2/ area. Larger area, 60 cm/sup 2/, thin film solar cells have been fabricated for the first time, and their AM1 efficiencies are slightly higher than 8%. The spectral response, minority carrier diffusion length, and I/sub sc/-V/sub oc/ relation in a number of solr cells have been measured.

  12. Comparison between laser terahertz emission microscope and conventional methods for analysis of polycrystalline silicon solar cell

    SciTech Connect

    Nakanishi, Hidetoshi Ito, Akira; Takayama, Kazuhisa Kawayama, Iwao Murakami, Hironaru Tonouchi, Masayoshi

    2015-11-15

    A laser terahertz emission microscope (LTEM) can be used for noncontact inspection to detect the waveforms of photoinduced terahertz emissions from material devices. In this study, we experimentally compared the performance of LTEM with conventional analysis methods, e.g., electroluminescence (EL), photoluminescence (PL), and laser beam induced current (LBIC), as an inspection method for solar cells. The results showed that LTEM was more sensitive to the characteristics of the depletion layer of the polycrystalline solar cell compared with EL, PL, and LBIC and that it could be used as a complementary tool to the conventional analysis methods for a solar cell.

  13. Thin film polycrystalline silicon solar cells: first technical progress report, April 15, 1980-July 15, 1980

    SciTech Connect

    1980-07-01

    The objectives of this contract are to fabricate large area thin film silicon solar cells with AM1 efficiency of 10% or greater with good reproducibility and good yield and to assess the feasibility of implementing this process for manufacturing solar cells at a cost of $300/kWe. Efforts during the past quarter have been directed to the purification of metallurgical silicon, the preparation of substrates, and the fabrication and characterization of solar cells. The partial purification of metallurgical silicon by extraction with aqua regia has been investigated in detail, and the resulting silicon was analyzed by the atomic absorption technique. The unidirectional solidification of aqua regia-extracted metallurgical silicon on graphite was used for the preparation of substrates, and the impurity distribution in the substrate was also determined. Large area (> 30 cm/sup 2/) solar cells have been prepared from aqua regia-extracted metallurgical silicon substrates by the thermal reduction of trichlorosilane containing appropriate dopants. Chemically deposited tin-dioxide films were used as antireflection coatings. Solar cells with AM1 efficiencies of about 8.5% have been obtained. Their spectral response, minority carrier diffusion length, and I/sub sc/-V/sub oc/ relation have been measured.

  14. Impurity segregation behavior in polycrystalline silicon ingot grown with variation of electron-beam power

    NASA Astrophysics Data System (ADS)

    Lee, Jun-Kyu; Lee, Jin-Seok; Jang, Bo-Yun; Kim, Joon-Soo; Ahn, Young-Soo; Cho, Churl-Hee

    2014-08-01

    Electron beam melting (EBM) systems have been used to improve the purity of metallurgical grade silicon feedstock for photovoltaic application. Our advanced EBM system is able to effectively remove volatile impurities using a heat source with high energy from an electron gun and to continuously allow impurities to segregate at the top of an ingot solidified in a directional solidification (DS) zone in a vacuum chamber. Heat in the silicon melt should move toward the ingot bottom for the desired DS. However, heat flux though the ingot is changed as the ingot becomes longer due to low thermal conductivity of silicon. This causes a non-uniform microstructure of the ingot, finally leading to impurity segregation at its middle. In this research, EB power irradiated on the silicon melt was controlled during the ingot growth in order to suppress the change of heat flux. EB power was reduced from 12 to 6.6 kW during the growth period of 45 min with a drop rate of 0.125 kW/min. Also, the silicon ingot was grown under a constant EB power of 12 kW to estimate the effect of the drop rate of EB power. When the EB power was reduced, the grains with columnar shape were much larger at the middle of the ingot compared to the case of constant EB power. Also, the present research reports a possible reason for the improvement of ingot purity by considering heat flux behaviors.

  15. Polycrystalline silicon material availability and market pricing outlook for 1980 through 1988

    NASA Technical Reports Server (NTRS)

    Costogue, E. N.; Ferber, R. R.

    1984-01-01

    The results of the second JPL update to an original report to assess the availability and prices of polycrystalline Si for solar cells in the 1983-88 interval are reported. It is noted that the demand for poly-Si for solar cells competes with the demand for the same material for semiconductors, although the solar cell industry can use material rejected from the semiconductor industry. A sufficient supply is projected for the 6 yr period, rising from 3224 metric tons to 10,220 metric tons in 1988, with prices dropping from the 1980 level of $140/kg to $25/kg. The price reduction and improved production are noted to be due in large part to DOE efforts at defining lower-cost production processes.

  16. Investigation of Melting and Solidification of Thin Polycrystalline Silicon Films via Mixed-Phase Solidification

    NASA Astrophysics Data System (ADS)

    Wang, Ying

    Melting and solidification constitute the fundamental pathways through which a thin-film material is processed in many beam-induced crystallization methods. In this thesis, we investigate and leverage a specific beam-induced, melt-mediated crystallization approach, referred to as Mixed-Phase Solidification (MPS), to examine and scrutinize how a polycrystalline Si film undergoes the process of melting and solidification. On the one hand, we develop a more general understanding as to how such transformations can transpire in polycrystalline films. On the other hand, by investigating how the microstructure evolution is affected by the thermodynamic properties of the system, we experimentally reveal, by examining the solidified microstructure, fundamental information about such properties (i.e., the anisotropy in interfacial free energy). Specifically, the thesis consists of two primary parts: (1) conducting a thorough and extensive investigation of the MPS process itself, which includes a detailed characterization and analysis of the microstructure evolution of the film as it undergoes MPS cycles, along with additional development and refinement of a previously proposed thermodynamic model to describe the MPS melting-and-solidification process; and (2) performing MPS-based experiments that were systematically designed to reveal more information on the anisotropic nature of Si-SiO2 interfacial energy (i.e., sigma Si-SiO2). MPS is a recently developed radiative-beam-based crystallization technique capable of generating Si films with a combination of several sought-after microstructural characteristics. It was conceived, developed, and characterized within our laser crystallization laboratory at Columbia University. A preliminary thermodynamic model was also previously proposed to describe the overall melting and solidification behavior of a polycrystalline Si film during an MPS cycle, wherein the grain-orientation-dependent solid-liquid interface velocity is identified

  17. Deposition and characterization of polycrystalline silicon films on glass for thin film solar cells

    SciTech Connect

    Bergmann, R.B.; Krinke, J.; Strunk, H.P.; Werner, J.H.

    1997-07-01

    The authors deposit phosphorus-doped, amorphous Si by low pressure chemical vapor deposition and subsequently crystallize the films by furnace annealing at a temperature of 600 C. Optical in-situ monitoring allows one to control the crystallization process. Phosphorus doping leads to faster crystallization and a grain size enhancement with a maximum grain size of 15 {micro}m. Using transmission electron microscopy they find a log-normal grain size distribution in their films. They demonstrate that this distribution not only arises from solid phase crystallization of amorphous Si but also from other crystallization processes based on random nucleation and growth. The log-normal grain size distribution seems to be a general feature of polycrystalline semiconductors.

  18. In-situ light-scattering measurements during the CVD of polycrystalline silicon carbide

    SciTech Connect

    Sheldon, B.W. |; Reichle, P.A.; Besmann, T.M.

    1992-12-31

    Light-scattering was used to monitor the chemical vapor deposition of silicon carbide from methyltrichlorosilane. Nucleation and growth of SiC caused changes in surface topography that altered the angular scattering spectrum generated by a He-Ne laser. These scattering spectra were analyzed to obtain information about the occurring nucleation and growth processes.

  19. Rapid thermal chemical vapor deposition of in situ boron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications

    NASA Astrophysics Data System (ADS)

    Li, V. Z.-Q.; Mirabedini, M. R.; Kuehn, R. T.; Wortman, J. J.; Öztürk, M. C.; Batchelor, D.; Christensen, K.; Maher, D. M.

    1997-12-01

    In situ boron-doped polycrystalline Si1-xGex (x>0.4) films have been formed on the thermally grown oxides in a rapid thermal chemical vapor deposition processor using SiH4-GeH4-B2H6-H2 gas system. Our results showed that in situ boron-doped Si1-xGex films can be directly deposited on the oxide surface, in contrast to the rapid thermal deposition of undoped silicon-germanium (Si1-xGex) films on oxides which is a partially selective process and requires a thin silicon film pre-deposition to form a continuous film. For the in situ boron-doped Si1-xGex films, we observed that with the increase of the germane percentage in the gas source, the Ge content and the deposition rate of the film are increased, while its resistivity is decreased down to 0.66 mΩ cm for a Ge content of 73%. Capacitance-voltage characteristics of p-type metal-oxide-semiconductor capacitors with p+-Si1-xGex gates showed negligible polydepletion effect for a 75 Å gate oxide, indicating that a high doping level of boron at the poly-Si1-xGex/oxide interface was achieved.

  20. Experimental study and two-dimensional modeling of avalanche breakdown voltage in polycrystalline silicon p-n junctions

    NASA Astrophysics Data System (ADS)

    Amrani, Mohammed; Benamara, Zineb; Chellali, Mohammed; Tizi, Schahrazade; Mohammed-Brahim, Tayeb

    2007-05-01

    A two-dimensional (2D) model of the avalanche breakdown mechanism is examined to achieve a lateral polycrystalline silicon (polysilicon) p+-n diode with high forward current and high breakdown voltage (BV). Samples with different film thicknesses (tf) were deposited by low-pressure chemical vapor deposition process. The p+ zone and n zone are doped by ionic implantation with boron and phosphorus, respectively. The measured current-voltage (I-V) characteristics show that BV varies between 6.4, 7.5, and 8.25V when tf varies between 250, 350, and 450nm, respectively. These data also show that when tf decreases, the forward current is high, the leakage current becomes higher under reverse bias, and BV decreases. We reveal that the breakdown phenomenon of our samples is dominated by the impact ionization effect. A 2D simulation of avalanche breakdown voltage versus the critical parameters of polysilicon diodes is implemented. The algorithm is based on the solution of Poisson's equation and calculating the ionization integral along various electric field lines computed from the potential distribution. By taking into account the localization of trap states in the grain boundaries, the effects on the breakdown voltage of the doping concentration ND, the intergranular trap state density NT, the grain sizes Lg, the disposition of the grain boundaries, and the film thickness tf are investigated. The simulation results show that the impact ionization mechanism is more accelerated in polysilicon than in single-crystalline silicon, and the BV(Lg), BV(ND), BV(NT), and BV(tf) curves are characterized by a succession of descending stair shapes due to the trapping of free carries by trap states contained in grain boundaries that are parallel to the metallurgic junction. By comparing simulation results with experimental data, we select the electron-hole ionization coefficients characterizing our samples: αn∞=1.0×106cm-1, Encrit=5.87×106Vcm-1, αp∞=1.582×106cm-1, and EPcrit=2

  1. High-Performance TiO2 -Based Electron-Selective Contacts for Crystalline Silicon Solar Cells.

    PubMed

    Yang, Xinbo; Bi, Qunyu; Ali, Haider; Davis, Kristopher; Schoenfeld, Winston V; Weber, Klaus

    2016-07-01

    Thin TiO2 films are demonstrated to be an excellent electron-selective contact for crystalline silicon solar cells. An efficiency of 21.6% is achieved for crystalline silicon solar cells featuring a full-area TiO2 -based electron-selective contact. PMID:27159874

  2. Three-dimensional study of a polycrystalline silicon solar cell: the influence of the applied magnetic field on the electrical parameters

    NASA Astrophysics Data System (ADS)

    Dieng, A.; Zerbo, I.; Wade, M.; Maiga, A. S.; Sissoko, G.

    2011-09-01

    In this paper, we present a theoretical 3D study of a polycrystalline silicon solar cell in frequency modulation under polychromatic illumination and applied magnetic field. The influence of the applied magnetic field on the diode current density, Jd, and both electric power-photovoltage and photocurrent-photovoltage characteristics are discussed. The Nyquist diagram permitted us to determine the electrical parameters such as the series resistance Rs and parallel equivalent resistance Rp of a polycrystalline silicon solar cell. The Bode diagram is then used to calculate the cut-off frequency, capacitance C and inductance L. It has been shown that, under a magnetic field, the solar cell behavior is like that of a low-pass filter.

  3. Investigation of Melting and Solidification of Thin Polycrystalline Silicon Films via Mixed-Phase Solidification

    NASA Astrophysics Data System (ADS)

    Wang, Ying

    Melting and solidification constitute the fundamental pathways through which a thin-film material is processed in many beam-induced crystallization methods. In this thesis, we investigate and leverage a specific beam-induced, melt-mediated crystallization approach, referred to as Mixed-Phase Solidification (MPS), to examine and scrutinize how a polycrystalline Si film undergoes the process of melting and solidification. On the one hand, we develop a more general understanding as to how such transformations can transpire in polycrystalline films. On the other hand, by investigating how the microstructure evolution is affected by the thermodynamic properties of the system, we experimentally reveal, by examining the solidified microstructure, fundamental information about such properties (i.e., the anisotropy in interfacial free energy). Specifically, the thesis consists of two primary parts: (1) conducting a thorough and extensive investigation of the MPS process itself, which includes a detailed characterization and analysis of the microstructure evolution of the film as it undergoes MPS cycles, along with additional development and refinement of a previously proposed thermodynamic model to describe the MPS melting-and-solidification process; and (2) performing MPS-based experiments that were systematically designed to reveal more information on the anisotropic nature of Si-SiO2 interfacial energy (i.e., sigma Si-SiO2). MPS is a recently developed radiative-beam-based crystallization technique capable of generating Si films with a combination of several sought-after microstructural characteristics. It was conceived, developed, and characterized within our laser crystallization laboratory at Columbia University. A preliminary thermodynamic model was also previously proposed to describe the overall melting and solidification behavior of a polycrystalline Si film during an MPS cycle, wherein the grain-orientation-dependent solid-liquid interface velocity is identified

  4. Spray drying method for large-scale and high-performance silicon negative electrodes in Li-ion batteries.

    PubMed

    Jung, Dae Soo; Hwang, Tae Hoon; Park, Seung Bin; Choi, Jang Wook

    2013-05-01

    Nanostructured silicon electrodes have shown great potential as lithium ion battery anodes because they can address capacity fading mechanisms originating from large volume changes of silicon alloys while delivering extraordinarily large gravimetric capacities. Nonetheless, synthesis of well-defined silicon nanostructures in an industrially adaptable scale still remains as a challenge. Herein, we adopt an industrially established spray drying process to enable scalable synthesis of silicon-carbon composite particles in which silicon nanoparticles are embedded in porous carbon particles. The void space existing in the porous carbon accommodates the volume expansion of silicon and thus addresses the chronic fading mechanisms of silicon anodes. The composite electrodes exhibit excellent electrochemical performance, such as 1956 mAh/g at 0.05C rate and 91% capacity retention after 150 cycles. Moreover, the spray drying method requires only 2 s for the formation of each particle and allows a production capability of ~10 g/h even with an ultrasonic-based lab-scale equipment. This investigation suggests that established industrial processes could be adaptable to the production of battery active materials that require sophisticated nanostructures as well as large quantity syntheses. PMID:23537321

  5. 3D determination of the minority carrier lifetime and the p-n junction recombination velocity of a polycrystalline silicon solar cell

    NASA Astrophysics Data System (ADS)

    Sam, R.; Zouma, B.; Zougmoré, F.; Koalaga, Z.; Zoungrana, M.; Zerbo, I.

    2012-02-01

    This work presents a theoretical and experimental transient tri-dimensional study conducted for the determination of the bulk component of the minority carrier lifetime and the p-n junction recombination velocity of a bifacial polycrystalline silicon solar cell. The theoretical analysis is based on the columnar model of the grains in the polycrystalline silicon solar cell. The boundaries conditions are defined in order to use Green's function to solve the three-dimensional diffusion equation. This leads to a new expression of the transient photovoltage. The value of the constraint coefficients at interfaces of the grain are computed while those of the effective minority carrier lifetime τeff is extracted from the experimental curve of transient voltage. The bulk lifetime and the p-n junction recombination velocity are deduced and have been compared to those obtained from transient state by one-dimensional modelling of carrier's diffusion. This comparative study permitted us to show grain effects on the lifetime and consequently the inadequacy of one-dimensional modelling of carrier's diffusion in the polycrystalline silicon solar cells.

  6. Low Temperature Deposition of PECVD Polycrystalline Silicon Thin Films using SiF4 / SiH4 mixture

    NASA Astrophysics Data System (ADS)

    Syed, Moniruzzaman; Inokuma, Takao; Kurata, Yoshihiro; Hasegawa, Seiichi

    2016-03-01

    Polycrystalline silicon films with a strong (110) texture were prepared at 400°C by a plasma-enhanced chemical vapor deposition using different SiF4 flow rates ([SiF4] = 0-0.5 sccm) under a fixed SiH4 flow rate ([SiH4] = 1 or 0.15 sccm). The effects of the addition of SiF4 to SiH4 on the structural properties of the films were studied by Raman scattering, X-ray diffraction (XRD), Atomic force microscopy and stress measurements. For [SiH4] = 1 sccm, the crystallinity and the (110) XRD grain size monotonically increased with increasing [SiF4] and their respective maxima reach 90% and 900 Å. However, for [SiH4] = 0.15 sccm, both the crystallinity and the grain size decreased with [SiF4]. Mechanisms causing the change in crystallinity are discussed, and it was suggested that an improvement in the crystallinity, due to the addition of SiF4, is likely to be caused by the effect of a change in the surface morphology of the substrates along with the effect of in situ chemical cleaning.

  7. Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Semiannual subcontract report, 8 December 1993--30 June 1994

    SciTech Connect

    Wohlgemuth, J.

    1995-03-01

    This report describes work done under a 3-year program to advance Solarex`s cast polycrystalline silicon manufacturing technology, reduce module production cost, increase module performance, and expand Solarex`s commercial production capacities. The accomplishments described in this report are as follows: (1) the authors designed modifications to casting stations, ceramic molds, and sizing saws to allow for casting and sizing of larger ingots; (2) they demonstrated the casting of ingots with 17% larger volume; (3) the selected and purchased a new wire saw from HCT Shaping Systems; (4) they demonstrated wafering of eight bricks (2,400 wafers or {approximately}4.4 kilowatts at the cell level) in a 6.5-h run; (5) they demonstrated 14% average cell efficiency in the laboratory using an aluminum paste back surface field; (6) the Automation and Robotics Research Institute (ARRI) completed a modeling study of the Solarex module assembly process; (7) they identified and qualified three new lower-cost back sheet materials through accelerated environmental tests; and (8) they designed and built a test structure for mounting frameless modules, and selected two adhesives and began testing their ability to hold modules to the structure.

  8. Analysis of P-Doped Polycrystalline Silicon Missing of W-Polycide Gate for 2X nm NAND Flash

    NASA Astrophysics Data System (ADS)

    Chen, Chun-Chi; Yang, Wen-Chung; Yin, Te-Yuan; Chien, Hung-Ju; Ying, Tzung-Hua

    2013-03-01

    We studied the control-gate (CG-Poly) missing behavior after post in-situ steam generation (ISSG) re-oxidation for W-polycide gate of 2X nm NAND Flash and attempted to determine the possible mechanism. On the other hand, various effective countermeasures were also been proposed. We found that Si atoms diffuse upward on WSi2.3 films, driven out of the underlying doped polycrystalline silicon film during steam radical oxidation process based on energy dispersive X-ray (EDX) analysis. A 2.5 nm remaining of SiN at least on sidewall before oxidation results in CG-Poly missing free and WSix deformation improvement simultaneously. A selective oxidation such as water vapor generator (WVG) and rapid thermal oxidation (RTO) can achieve the same efficient performance. Additionally, less intrinsic tensile stress of WSix film employment also shows immunity against CG-Poly missing. Satisfactory sidewall barrier utilization for ISSG oxidation, diverse thermal oxidation selection, and even by WSix film property modifying might avoid poly-Si missing occurrence and reduce the WSix film deformation extent for the narrower dimension of 2X nm and beyond.

  9. Facile synthesis of binder-free reduced graphene oxide/silicon anode for high-performance lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Zuo, Pengjian; Chen, Cheng; Ma, Yulin; Cheng, Xinqun; Du, Chunyu; Gao, Yunzhi; Yin, Geping

    2016-04-01

    A novel binder-free reduced graphene oxide/silicon (RGO/Si) composite anode has been fabricated by a facile doctor-blade coating method. The relatively low C/O ratio plays an important role for the fabrication of the bind-free multilayered RGO/Si electrode with silicon nanoparticles encapsulating among the RGO sheet layers. The RGO provides the electron transport pathway and prevents the electrode fracture caused by the volume changes of active silicon particles during cycling. The RGO/Si composite anode with a silicon content of 66.7% delivers a reversible capacity of 1931 mAh g-1 at 0.2 A g-1 and still remains 92% of the initial capacity after 50 cycles.

  10. Mussel-inspired adhesive binders for high-performance silicon nanoparticle anodes in lithium-ion batteries.

    PubMed

    Ryou, Myung-Hyun; Kim, Jangbae; Lee, Inhwa; Kim, Sunjin; Jeong, You Kyeong; Hong, Seonki; Ryu, Ji Hyun; Kim, Taek-Soo; Park, Jung-Ki; Lee, Haeshin; Choi, Jang Wook

    2013-03-20

    Conjugation of mussel-inspired catechol groups to various polymer backbones results in materials suitable as silicon anode binders. The unique wetness-resistant adhesion provided by the catechol groups allows the silicon nanoparticle electrodes to maintain their structure throughout the repeated volume expansion and shrinkage during lithiation cycling, thus facilitating substantially improved specific capacities and cycle lives of lithium-ion batteries. PMID:23280515

  11. Interfacial Layer Control by Dry Cleaning Technology for Polycrystalline and Single Crystalline Silicon Growth.

    PubMed

    Im, Dong-Hyun; Kong-Soo Lee; Kang, Yoongoo; Jeong, Myoungho; Park, Kwang Wuk; Lee, Soon-Gun; Ma, Jin-Won; Kim, Youngseok; Kim, Bonghyun; Im, Ki-Vin; Lim, Hanjin; Lee, Jeong Yong

    2016-05-01

    Native oxide removal prior to poly-Si contact and epitaxial growth of Si is the most critical technology to ensure process and device performances of poly-Si plugs and selective epitaxial growth (SEG) layers for DRAM, flash memory, and logic device. Recently, dry cleaning process for interfacial oxide removal has attracted a world-wide attention due to its superior passivation properties to conventional wet cleaning processes. In this study, we investigated the surface states of Si substrate during and after dry cleaning process, and the role of atomic elements including fluorine and hydrogen on the properties of subsequent deposited silicon layer using SIMS, XPS, and TEM analysis. The controlling of residual fluorine on the Si surface after dry cleaning is a key factor for clean interface. The mechanism of native oxide re-growth caused by residual fluorine after dry cleaning is proposed based on analytical results. PMID:27483844

  12. Polydopamine Wrapping Silicon Cross-linked with Polyacrylic Acid as High-Performance Anode for Lithium-Ion Batteries.

    PubMed

    Bie, Yitian; Yang, Jun; Liu, Xiaolin; Wang, Jiulin; Nuli, Yanna; Lu, Wei

    2016-02-10

    A robust silicon electrode for lithium-ion battery has been developed via prepolymerizing dopamine on silicon particle surface and then chemical binding with poly(acrylic acid) (PAA). In this favorable electrode, silicon nanoparticles are covered by a thin layer of polydopamine (PD) through firm hydrogen bonds between phenolic hydroxyl and hydroxyl, while the elastic polymer layer reacts with PAA binder to form three-dimensional cross-linked binding system. The Si@PD/PAA electrode exhibits more stable cycle performance than conventional electrodes. In the case of thick electrode, a capacity of 3.69 mA h cm(-2) and fairly good rechargeability for 80 cycles can be achieved. PMID:26808456

  13. Upgrade of the hot zone for large-size high-performance multi-crystalline silicon ingot casting

    NASA Astrophysics Data System (ADS)

    Wu, Zhiyong; Zhong, Genxiang; Zhou, Xucheng; Zhang, Zhaoyu; Wang, Zixu; Chen, Wenliang; Huang, Xinming

    2016-05-01

    Casting larger silicon ingots by upgrading the hot zone is one of the main methods used to reduce the cost of multi-crystalline silicon wafers. In this paper, a new hot zone is designed and a transient global model is applied to investigate the effects of the new hot zone on the electricity consumption, the crystal growth rate, and the shape of the C-M interface during the solidification process. Based on the simulation results, a generation-five, directional-solidification furnace was upgraded and implemented in casting experiments. The experimental results show that the feedstock capacity increased by 77.8%, the crystal growth efficiency increased by 53.8%, and the average yield rate of the silicon ingots increased by 9%. The crystal-melt interface was flatter and the growth direction of the grains was almost straight upward.

  14. Tribological behavior of micron-scale polycrystalline silicon structural films in ambient air

    NASA Astrophysics Data System (ADS)

    Alsem, D. H.; van der Hulst, R.; Stach, E. A.; Dugger, M. T.; De Hosson, J. Th. M.; Ritchie, R. O.

    2009-02-01

    As tribological properties are critical factors in the reliability of microelectromechanical systems, it is important to understand the physical processes and parameters governing wear and friction in silicon structural films. Dynamic friction, wear volumes and wear morphology have been studied for polysilicon devices from the Sandia SUMMiT VTM process actuated in ambient air at μN loads. A total of seven devices were tested. Roughly half of the devices showed a peak in the friction coefficient at three times the initial value with failure after 105 cycles. The other half of the devices behaved similarly initially; however, following the friction coefficient peak they displayed a lower steady-state friction regime with no failure for millions of cycles. Additionally, the nanoscale wear coefficient and roughness increased in the first ~105 cycles and then slowly decayed over several million cycles. Transmission electron microscopy studies revealed amorphous oxygen-rich debris. These measurements show that after a short adhesive wear regime, abrasive wear is the governing mechanism with failures attributed to differences in the local nanoscale surface morphology. Changing the relative humidity, sliding speed and load was found to influence the friction coefficient, but re-oxidation of worn polysilicon surfaces was only found to have an effect after periods of inactivity.

  15. Nonfilling carbon coating of porous silicon micrometer-sized particles for high-performance lithium battery anodes.

    PubMed

    Lu, Zhenda; Liu, Nian; Lee, Hyun-Wook; Zhao, Jie; Li, Weiyang; Li, Yuzhang; Cui, Yi

    2015-03-24

    Silicon is widely recognized as one of the most promising anode materials for lithium-ion batteries due to its 10 times higher specific capacity than graphite. Unfortunately, the large volume change of Si materials during their lithiation/delithiation process results in severe pulverization, loss of electrical contact, unstable solid-electrolyte interphase (SEI), and eventual capacity fading. Although there has been tremendous progress to overcome these issues through nanoscale materials design, improved volumetric capacity and reduced cost are still needed for practical application. To address these issues, we design a nonfilling carbon-coated porous silicon microparticle (nC-pSiMP). In this structure, porous silicon microparticles (pSiMPs) consist of many interconnected primary silicon nanoparticles; only the outer surface of the pSiMPs was coated with carbon, leaving the interior pore structures unfilled. Nonfilling carbon coating hinders electrolyte penetration into the nC-pSiMPs, minimizes the electrode-electrolyte contact area, and retains the internal pore space for Si expansion. SEI formation is mostly limited to the outside of the microparticles. As a result, the composite structure demonstrates excellent cycling stability with high reversible specific capacity (∼1500 mAh g(-1), 1000 cycles) at the rate of C/4. The nC-pSiMPs contain accurate void space to accommodate Si expansion while not losing packing density, which allows for a high volumetric capacity (∼1000 mAh cm(-3)). The areal capacity can reach over 3 mAh cm(-2) with the mass loading 2.01 mg cm(-2). Moreover, the production of nC-pSiMP is simple and scalable using a low-cost silicon monoxide microparticle starting material. PMID:25738223

  16. Metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology and application to flat-panel displays

    NASA Astrophysics Data System (ADS)

    Meng, Zhiguo

    High quality flat-panel displays (FPD) typically use active-matrix (AM) addressing, with the optical state of each pixel controlled by one or more active devices such as amorphous silicon (a-Si) thin film transistors (TFT). The successful examples are portable computer and liquid-crystal television (LC-TV). A high level of system on panel (SoP) electronic integration is required for versatile and compact systems. Meanwhile, many self-emitting display technologies are developing fast, active matrix for self-emitting display is typically current driven. The a-Si TFTs suffer from limited current driving capability, polycrystalline silicon (poly-Si) device technology is required. A new technology employing metal-induced unilaterally crystallization (MIUC) is presently reported. The device characteristics are obviously better than those in rapid-thermal annealed (RTA) and solid-phase crystallization (SPC) TFTs and the fabrication equipment is much cheaper than excimer laser crystallization (ELC) technology. The field effect mobility (muFE) of p- and n-channel MIUC TFTs is about 100cm2/Vs. Ion/I off is more than seven orders. Gate-induced leakage current in LT-MIUC poly-Si TFTs has been reduced by crystallization before heavy junction implantation to improve material quality and incorporating a gate-modulated lightly-doped drain (gamo-LDD) structure to reduce the electric field near the drain/channel junction region. At the same time, recrystallized (RC) MIUC TFT was researched with device characteristics improved. The 6.6cm 120 x 160 active matrix for OLED display is fabricated using LT-MIUC TFT technology on glass substrate. This display has the advantages of self-emitting, large intrinsic view angle and very fast response. At the same time, 6.6cm 120X160 AM-reflective twist nematic (RTN) display is fabricated using RC-MIUC TFT technology. This display is capable of producing 16 grade levels, 10:1 contrast and video image. The SOP display for AM-OLED were designed

  17. High Performance Polymers

    NASA Technical Reports Server (NTRS)

    Venumbaka, Sreenivasulu R.; Cassidy, Patrick E.

    2003-01-01

    This report summarizes results from research on high performance polymers. The research areas proposed in this report include: 1) Effort to improve the synthesis and to understand and replicate the dielectric behavior of 6HC17-PEK; 2) Continue preparation and evaluation of flexible, low dielectric silicon- and fluorine- containing polymers with improved toughness; and 3) Synthesis and characterization of high performance polymers containing the spirodilactam moiety.

  18. A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

    NASA Astrophysics Data System (ADS)

    Zhu, Feng; Zhao, Han; Ok, I.; Kim, H. S.; Yum, J.; Lee, Jack C.; Goel, Niti; Tsai, W.; Gaspe, C. K.; Santos, M. B.

    2009-01-01

    In this letter, we demonstrate a high performance In0.53Ga0.47As channel n-type metal-oxide-semiconductor field effect transistor with silicon interface passivation layer (IPL) and HfO2 gate oxide. Owing to the effectiveness of Si IPL on improving the interface quality, good device characteristics have been obtained, including the peak transconductance of 7.7 mS/mm (Lg=5 μm and Vd=50 mV), drive current of 158 mA/mm (Lg=5 μm, Vgs=Vth+2 V, and Vd=2.5 V), and the peak effective channel mobility of 1034 cm2/V s. As an important factor on device design, the impact of silicon IPL thickness on the transistor characteristics has been investigated.

  19. In situ thermally cross-linked polyacrylonitrile as binder for high-performance silicon as lithium ion battery anode.

    PubMed

    Shen, Lanyao; Shen, Lian; Wang, Zhaoxiang; Chen, Liquan

    2014-07-01

    Electrode integrity and electric contact between particles and between particle and current collector are critical for electrochemical performance, especially for that of electrode materials with large volume change during cycling and with poor electric conductivity. We report on the in situ thermally cross-linked polyacrylonitrile (PAN) as a binder for silicon-based anodes of lithium-ion batteries. The electrode delivers excellent cycle life and rate capability with a reversible capacity of about 1450 mA h g(-1) even after 100 cycles. The improved electrochemical performance of such silicon electrodes is attributed to heat-treatment-induced cross-linking and the formation of conjugated PAN. These findings open new avenues to explore other polymers for both anode and cathode electrodes of rechargeable batteries. PMID:24782265

  20. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

    PubMed

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  1. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

    PubMed Central

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  2. A silicon nanowire-reduced graphene oxide composite as a high-performance lithium ion battery anode material

    NASA Astrophysics Data System (ADS)

    Ren, Jian-Guo; Wang, Chundong; Wu, Qi-Hui; Liu, Xiang; Yang, Yang; He, Lifang; Zhang, Wenjun

    2014-02-01

    Toward the increasing demands of portable energy storage and electric vehicle applications, silicon has been emerging as a promising anode material for lithium-ion batteries (LIBs) owing to its high specific capacity. However, serious pulverization of bulk silicon during cycling limits its cycle life. Herein, we report a novel hierarchical Si nanowire (Si NW)-reduced graphene oxide (rGO) composite fabricated using a solvothermal method followed by a chemical vapor deposition process. In the composite, the uniform-sized [111]-oriented Si NWs are well dispersed on the rGO surface and in between rGO sheets. The flexible rGO enables us to maintain the structural integrity and to provide a continuous conductive network of the electrode, which results in over 100 cycles serving as an anode in half cells at a high lithium storage capacity of 2300 mA h g-1. Due to its [111] growth direction and the large contact area with rGO, the Si NWs in the composite show substantially enhanced reaction kinetics compared with other Si NWs or Si particles.Toward the increasing demands of portable energy storage and electric vehicle applications, silicon has been emerging as a promising anode material for lithium-ion batteries (LIBs) owing to its high specific capacity. However, serious pulverization of bulk silicon during cycling limits its cycle life. Herein, we report a novel hierarchical Si nanowire (Si NW)-reduced graphene oxide (rGO) composite fabricated using a solvothermal method followed by a chemical vapor deposition process. In the composite, the uniform-sized [111]-oriented Si NWs are well dispersed on the rGO surface and in between rGO sheets. The flexible rGO enables us to maintain the structural integrity and to provide a continuous conductive network of the electrode, which results in over 100 cycles serving as an anode in half cells at a high lithium storage capacity of 2300 mA h g-1. Due to its [111] growth direction and the large contact area with rGO, the Si NWs in

  3. High performance hydrogenated amorphous silicon solar cells made at a high deposition rate by glow discharge of disilane

    SciTech Connect

    Ohashi, Y.; Kenne, J.; Konagai, M.; Takahashi, K.

    1983-06-15

    The deposition rate, electronic and optical properties of hydrogenated amorphous silicon films prepared from rf glow discharge decomposition of disilane (Si/sub 2/H/sub 6/) diluted in helium have been measured. These films show excellent electrical and optical properties and, most importantly, a high deposition rate coupled with satisfactory solar cell application was realized for the first time. At a deposition rate of 11 A/s, 5.47% and 6.5% conversion efficiencies were obtained with a first trial of n-i-p type solar cells deposited on SnO/sub 2//ITO glass and metal substrates, respectively.

  4. Dual yolk-shell structure of carbon and silica-coated silicon for high-performance lithium-ion batteries

    PubMed Central

    Yang, L. Y.; Li, H. Z.; Liu, J.; Sun, Z. Q.; Tang, S. S.; Lei, M.

    2015-01-01

    Silicon batteries have attracted much attention in recent years due to their high theoretical capacity, although a rapid capacity fade is normally observed, attributed mainly to volume expansion during lithiation. Here, we report for the first time successful synthesis of Si/void/SiO2/void/C nanostructures. The synthesis strategy only involves selective etching of SiO2 in Si/SiO2/C structures with hydrofluoric acid solution. Compared with reported results, such novel structures include a hard SiO2-coated layer, a conductive carbon-coated layer, and two internal void spaces. In the structures, the carbon can enhance conductivity, the SiO2 layer has mechanically strong qualities, and the two internal void spaces can confine and accommodate volume expansion of silicon during lithiation. Therefore, these specially designed dual yolk-shell structures exhibit a stable and high capacity of 956 mA h g−1 after 430 cycles with capacity retention of 83%, while the capacity of Si/C core-shell structures rapidly decreases in the first ten cycles under the same experimental conditions. The novel dual yolk-shell structures developed for Si can also be extended to other battery materials that undergo large volume changes. PMID:26039972

  5. A silicon nanowire-reduced graphene oxide composite as a high-performance lithium ion battery anode material.

    PubMed

    Ren, Jian-Guo; Wang, Chundong; Wu, Qi-Hui; Liu, Xiang; Yang, Yang; He, Lifang; Zhang, Wenjun

    2014-03-21

    Toward the increasing demands of portable energy storage and electric vehicle applications, silicon has been emerging as a promising anode material for lithium-ion batteries (LIBs) owing to its high specific capacity. However, serious pulverization of bulk silicon during cycling limits its cycle life. Herein, we report a novel hierarchical Si nanowire (Si NW)-reduced graphene oxide (rGO) composite fabricated using a solvothermal method followed by a chemical vapor deposition process. In the composite, the uniform-sized [111]-oriented Si NWs are well dispersed on the rGO surface and in between rGO sheets. The flexible rGO enables us to maintain the structural integrity and to provide a continuous conductive network of the electrode, which results in over 100 cycles serving as an anode in half cells at a high lithium storage capacity of 2300 mA h g(-1). Due to its [111] growth direction and the large contact area with rGO, the Si NWs in the composite show substantially enhanced reaction kinetics compared with other Si NWs or Si particles. PMID:24522297

  6. High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

    SciTech Connect

    Wang, Zihao; Preble, Stefan F.; Yao, Ruizhe; Lee, Chi-Sen; Guo, Wei; Lester, Luke F.

    2015-12-28

    InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 °C) Pd-mediated wafer bonding process. A low interfacial resistivity of only 0.2 Ω cm{sup 2} formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J{sub th} and differential quantum efficiency η{sub d} of 240 A/cm{sup 2} and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridge of 1.5 mm and 5 μm, respectively. The InAs QD lasers also show operation up to 100 °C with a threshold current density J{sub th} and differential quantum efficiency η{sub d} of 950 A/cm{sup 2} and 9.3%, respectively. The temperature coefficient T{sub 0} of 69 K from 60 to 100 °C is characterized from the temperature dependent J{sub th} measurements.

  7. High-performance uncooled amorphous silicon VGA and XGA IRFPA with 17μm pixel-pitch

    NASA Astrophysics Data System (ADS)

    Tissot, J. L.; Tinnes, S.; Durand, A.; Minassian, C.; Robert, P.; Vilain, M.

    2010-10-01

    The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon with 45μm, 35μm and 25μm, enables ULIS to develop VGA and XGA IRFPA formats with 17μm pixel-pitch to fulfill every applications. These detector keeps all the recent innovations developed on the 25μm pixel-pitch ROIC (detector configuration by serial link, low power consumption and wide electrical dynamic range). The specific appeal of these units lies in the high spatial resolution it provides while keeping the small thermal time constant. The reduction of the pixel-pitch turns the TEC-less VGA array into a product well adapted for high resolution and compact systems and the XGA a product well adapted for high resolution imaging systems. High electro-optical performances have been demonstrated with NETD < 50mK. We insist on NETD and wide thermal dynamic range trade-off, and on the high characteristics uniformity, achieved thanks to the mastering of the amorphous silicon technology as well as the ROIC design. This technology node paves the way to high end products as well as low end compact smaller formats like 320 x 240 and 160 x 120 or smaller.

  8. Caramel popcorn shaped silicon particle with carbon coating as a high performance anode material for Li-ion batteries.

    PubMed

    He, Meinan; Sa, Qina; Liu, Gao; Wang, Yan

    2013-11-13

    Silicon is a very promising anode material for lithium ion batteries. It has a 4200 mAh/g theoretical capacity, which is ten times higher than that of commercial graphite anodes. However, when lithium ions diffuse to Si anodes, the volume of Si will expand to almost 400% of its initial size and lead to the crack of Si. Such a huge volume change and crack cause significant capacity loss. Meanwhile, with the crack of Si particles, the conductivity between the electrode and the current collector drops. Moreover, the solid electrolyte interphase (SEI), which is generated during the cycling, reduces the discharge capacity. These issues must be addressed for widespread application of this material. In this work, caramel popcorn shaped porous silicon particles with carbon coating are fabricated by a set of simple chemical methods as active anode material. Si particles are etched to form a porous structure. The pores in Si provide space for the volume expansion and liquid electrolyte diffusion. A layer of amorphous carbon is formed inside the pores, which gives an excellent isolation between the Si particle and electrolyte, so that the formation of the SEI layer is stabilized. Meanwhile, this novel structure enhances the mechanical properties of the Si particles, and the crack phenomenon caused by the volume change is significantly restrained. Therefore, an excellent cycle life under a high rate for the novel Si electrode is achieved. PMID:24111737

  9. 3D hierarchical assembly of ultrathin MnO2 nanoflakes on silicon nanowires for high performance micro-supercapacitors in Li- doped ionic liquid

    PubMed Central

    Dubal, Deepak P.; Aradilla, David; Bidan, Gérard; Gentile, Pascal; Schubert, Thomas J.S.; Wimberg, Jan; Sadki, Saïd; Gomez-Romero, Pedro

    2015-01-01

    Building of hierarchical core-shell hetero-structures is currently the subject of intensive research in the electrochemical field owing to its potential for making improved electrodes for high-performance micro-supercapacitors. Here we report a novel architecture design of hierarchical MnO2@silicon nanowires (MnO2@SiNWs) hetero-structures directly supported onto silicon wafer coupled with Li-ion doped 1-Methyl-1-propylpyrrolidinium bis(trifluromethylsulfonyl)imide (PMPyrrBTA) ionic liquids as electrolyte for micro-supercapacitors. A unique 3D mesoporous MnO2@SiNWs in Li-ion doped IL electrolyte can be cycled reversibly across a voltage of 2.2 V and exhibits a high areal capacitance of 13 mFcm−2. The high conductivity of the SiNWs arrays combined with the large surface area of ultrathin MnO2 nanoflakes are responsible for the remarkable performance of these MnO2@SiNWs hetero-structures which exhibit high energy density and excellent cycling stability. This combination of hybrid electrode and hybrid electrolyte opens up a novel avenue to design electrode materials for high-performance micro-supercapacitors. PMID:25985388

  10. 3D hierarchical assembly of ultrathin MnO2 nanoflakes on silicon nanowires for high performance micro-supercapacitors in Li- doped ionic liquid

    NASA Astrophysics Data System (ADS)

    Dubal, Deepak P.; Aradilla, David; Bidan, Gérard; Gentile, Pascal; Schubert, Thomas J. S.; Wimberg, Jan; Sadki, Saïd; Gomez-Romero, Pedro

    2015-05-01

    Building of hierarchical core-shell hetero-structures is currently the subject of intensive research in the electrochemical field owing to its potential for making improved electrodes for high-performance micro-supercapacitors. Here we report a novel architecture design of hierarchical MnO2@silicon nanowires (MnO2@SiNWs) hetero-structures directly supported onto silicon wafer coupled with Li-ion doped 1-Methyl-1-propylpyrrolidinium bis(trifluromethylsulfonyl)imide (PMPyrrBTA) ionic liquids as electrolyte for micro-supercapacitors. A unique 3D mesoporous MnO2@SiNWs in Li-ion doped IL electrolyte can be cycled reversibly across a voltage of 2.2 V and exhibits a high areal capacitance of 13 mFcm-2. The high conductivity of the SiNWs arrays combined with the large surface area of ultrathin MnO2 nanoflakes are responsible for the remarkable performance of these MnO2@SiNWs hetero-structures which exhibit high energy density and excellent cycling stability. This combination of hybrid electrode and hybrid electrolyte opens up a novel avenue to design electrode materials for high-performance micro-supercapacitors.

  11. A low cost, high performance, 1.2m off-axis telescope built with NG-Xinetics silicon carbide

    NASA Astrophysics Data System (ADS)

    Rey, Justin J.; Wellman, John A.; Egan, Richard G.; Wollensak, Richard J.

    2011-09-01

    The search for extrasolar habitable planets is one of three major astrophysics priorities identified for the next decade. These missions demand very high performance visible-wavelength optical imaging systems. Such high performance space telescopes are typically extremely expensive and can be difficult for government agencies to afford in today's economic climate, and most lower cost systems offer little benefit because they fall short on at least one of the following three key performance parameters: imaging wavelength, total system-level wavefront error and aperture diameter. Northrop Grumman Xinetics has developed a simple, lightweight, low-cost telescope design that will address the near-term science objectives of this astrophysics theme with the required optical performance, while reducing the telescope cost by an order of magnitude. Breakthroughs in SiC mirror manufacturing, integrated wavefront sensing, and high TRL deformable mirror technology have finally been combined within the same organization to offer a complete end-to-end telescope system in the lower end of the Class D cost range. This paper presents the latest results of real OAP polishing and metrology data, an optimized optical design, and finite element derived WFE

  12. Efficient 3D conducting networks built by graphene sheets and carbon nanoparticles for high-performance silicon anode.

    PubMed

    Zhou, Xiaosi; Yin, Ya-Xia; Cao, An-Min; Wan, Li-Jun; Guo, Yu-Guo

    2012-05-01

    The utilization of silicon particles as anode materials for lithium-ion batteries is hindered by their low intrinsic electric conductivity and large volume changes during cycling. Here we report a novel Si nanoparticle-carbon nanoparticle/graphene composite, in which the addition of carbon nanoparticles can effectively alleviate the aggregation of Si nanoparticles by separating them from each other, and help graphene sheets build efficient 3D conducting networks for Si nanoparticles. Such Si-C/G composite shows much improved electrochemical properties in terms of specific capacity and cycling performance (ca. 1521 mA h g(-1) at 0.2 C after 200 cycles), as well as a favorable high-rate capability. PMID:22563769

  13. Gold@silver bimetal nanoparticles/pyramidal silicon 3D substrate with high reproducibility for high-performance SERS

    NASA Astrophysics Data System (ADS)

    Zhang, Chao; Jiang, Shou Zhen; Yang, Cheng; Li, Chong Hui; Huo, Yan Yan; Liu, Xiao Yun; Liu, Ai Hua; Wei, Qin; Gao, Sai Sai; Gao, Xing Guo; Man, Bao Yuan

    2016-05-01

    A novel and efficient surface enhanced Raman scattering (SERS) substrate has been presented based on Gold@silver/pyramidal silicon 3D substrate (Au@Ag/3D-Si). By combining the SERS activity of Ag, the chemical stability of Au and the large field enhancement of 3D-Si, the Au@Ag/3D-Si substrate possesses perfect sensitivity, homogeneity, reproducibility and chemical stability. Using R6G as probe molecule, the SERS results imply that the Au@Ag/3D-Si substrate is superior to the 3D-Si, Ag/3D-Si and Au/3D-Si substrate. We also confirmed these excellent behaviors in theory via a commercial COMSOL software. The corresponding experimental and theoretical results indicate that our proposed Au@Ag/3D-Si substrate is expected to develop new opportunities for label-free SERS detections in biological sensors, biomedical diagnostics and food safety.

  14. Gold@silver bimetal nanoparticles/pyramidal silicon 3D substrate with high reproducibility for high-performance SERS

    PubMed Central

    Zhang, Chao; Jiang, Shou Zhen; Yang, Cheng; Li, Chong Hui; Huo, Yan Yan; Liu, Xiao Yun; Liu, Ai Hua; Wei, Qin; Gao, Sai Sai; Gao, Xing Guo; Man, Bao Yuan

    2016-01-01

    A novel and efficient surface enhanced Raman scattering (SERS) substrate has been presented based on Gold@silver/pyramidal silicon 3D substrate (Au@Ag/3D-Si). By combining the SERS activity of Ag, the chemical stability of Au and the large field enhancement of 3D-Si, the Au@Ag/3D-Si substrate possesses perfect sensitivity, homogeneity, reproducibility and chemical stability. Using R6G as probe molecule, the SERS results imply that the Au@Ag/3D-Si substrate is superior to the 3D-Si, Ag/3D-Si and Au/3D-Si substrate. We also confirmed these excellent behaviors in theory via a commercial COMSOL software. The corresponding experimental and theoretical results indicate that our proposed Au@Ag/3D-Si substrate is expected to develop new opportunities for label-free SERS detections in biological sensors, biomedical diagnostics and food safety. PMID:27143507

  15. Gold@silver bimetal nanoparticles/pyramidal silicon 3D substrate with high reproducibility for high-performance SERS.

    PubMed

    Zhang, Chao; Jiang, Shou Zhen; Yang, Cheng; Li, Chong Hui; Huo, Yan Yan; Liu, Xiao Yun; Liu, Ai Hua; Wei, Qin; Gao, Sai Sai; Gao, Xing Guo; Man, Bao Yuan

    2016-01-01

    A novel and efficient surface enhanced Raman scattering (SERS) substrate has been presented based on Gold@silver/pyramidal silicon 3D substrate (Au@Ag/3D-Si). By combining the SERS activity of Ag, the chemical stability of Au and the large field enhancement of 3D-Si, the Au@Ag/3D-Si substrate possesses perfect sensitivity, homogeneity, reproducibility and chemical stability. Using R6G as probe molecule, the SERS results imply that the Au@Ag/3D-Si substrate is superior to the 3D-Si, Ag/3D-Si and Au/3D-Si substrate. We also confirmed these excellent behaviors in theory via a commercial COMSOL software. The corresponding experimental and theoretical results indicate that our proposed Au@Ag/3D-Si substrate is expected to develop new opportunities for label-free SERS detections in biological sensors, biomedical diagnostics and food safety. PMID:27143507

  16. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

    SciTech Connect

    El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao Qihua; Li Yixin; Street, Robert A.; Lu Jengping

    2009-07-15

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of {approx}10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical

  17. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

    PubMed Central

    El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A.; Lu, Jeng-Ping

    2009-01-01

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and∕or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of ∼10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill

  18. A New Approach of Polycrystalline Silicon Film on Plastic Substrate Prepared by Ion Beam Deposition Followed by Excimer Laser Crystallization at Room Temperature

    NASA Astrophysics Data System (ADS)

    Kwon, Jang Yeon; Lim, Hyuck; Park, Kyung Bae; Jung, Ji Sim; Kim, Do Young; Cho, Hans S.; Kim, Seok Pil; Park, Young Soo; Kim, Jong Man; Noguchi, Takashi

    2006-05-01

    In this work, we propose a new polycrystalline silicon (poly-Si) film of large grain for thin film transistor on flexible substrate. Thin films of amorphous silicon were deposited on plastic substrate by using ion beam deposition (IBD) and crystallized by excimer laser annealing. The entire process was carried out at room temperature. Si film formed by IBD has much lower impurity such as Ar, O, and H than that deposited by conventional sputtering method. This high purity of Si film makes large grain size (0.5 μm) and shows high endurance of excimer laser energy both on quartz and plastic substrate for flexible active matrix organic light emitting diode (AMOLED).

  19. Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices

    PubMed Central

    Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M.; Calzada, M. Lourdes

    2016-01-01

    Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics. PMID:26837240

  20. Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microeletronic [corrected] devices.

    PubMed

    Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M; Calzada, M Lourdes

    2016-01-01

    Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound--morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT)--are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm(-2) is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics. PMID:26837240

  1. Poly (acrylic acid sodium) grafted carboxymethyl cellulose as a high performance polymer binder for silicon anode in lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Wei, Liangming; Chen, Changxin; Hou, Zhongyu; Wei, Hao

    2016-01-01

    The design of novel binder systems is required for the high capacity silicon (Si) anodes which usually undergo huge volume change during the charge/discharge cycling. Here, we introduce a poly (acrylic acid sodium)-grafted-carboxymethyl cellulose (NaPAA-g-CMC) copolymer as an excellent binder for Si anode in lithium ion batteries (LIBs). The NaPAA-g-CMC copolymer was prepared via a free radical graft polymerization method by using CMC and acrylic acid as precursors. Unlike the linear, one-dimensional binders, the NaPAA-g-CMC copolymer binder is expected to present multi-point interaction with Si surface, resulting in enhanced binding ability with Si particles as well as with the copper (Cu) current collectors, and building a stable solid electrolyte interface (SEI) layer on the Si surface. The NaPAA-g-CMC based Si anode shows much better cycle stability and higher coulombic efficiency than those made with the well-known linear polymeric binders such as CMC and NaPPA.

  2. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells

    PubMed Central

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-01-01

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm2, which is 48.76% higher than that of flat system. PMID:27455911

  3. Poly (acrylic acid sodium) grafted carboxymethyl cellulose as a high performance polymer binder for silicon anode in lithium ion batteries.

    PubMed

    Wei, Liangming; Chen, Changxin; Hou, Zhongyu; Wei, Hao

    2016-01-01

    The design of novel binder systems is required for the high capacity silicon (Si) anodes which usually undergo huge volume change during the charge/discharge cycling. Here, we introduce a poly (acrylic acid sodium)-grafted-carboxymethyl cellulose (NaPAA-g-CMC) copolymer as an excellent binder for Si anode in lithium ion batteries (LIBs). The NaPAA-g-CMC copolymer was prepared via a free radical graft polymerization method by using CMC and acrylic acid as precursors. Unlike the linear, one-dimensional binders, the NaPAA-g-CMC copolymer binder is expected to present multi-point interaction with Si surface, resulting in enhanced binding ability with Si particles as well as with the copper (Cu) current collectors, and building a stable solid electrolyte interface (SEI) layer on the Si surface. The NaPAA-g-CMC based Si anode shows much better cycle stability and higher coulombic efficiency than those made with the well-known linear polymeric binders such as CMC and NaPPA. PMID:26786315

  4. Methods for Producing High-Performance Silicon Carbide Fibers, Architectural Preforms, and High-Temperature Composite Structures

    NASA Technical Reports Server (NTRS)

    DiCarlo, James A. (Inventor); Yun, Hee-Mann (Inventor)

    2014-01-01

    Methods are disclosed for producing architectural preforms and high-temperature composite structures containing high-strength ceramic fibers with reduced preforming stresses within each fiber, with an in-situ grown coating on each fiber surface, with reduced boron within the bulk of each fiber, and with improved tensile creep and rupture resistance properties tier each fiber. The methods include the steps of preparing an original sample of a preform formed from a pre-selected high-strength silicon carbide ceramic fiber type, placing the original sample in a processing furnace under a pre-selected preforming stress state and thermally treating the sample in the processing furnace at a pre-selected processing temperature and hold time in a processing gas having a pre-selected composition, pressure, and flow rate. For the high-temperature composite structures, the method includes additional steps of depositing a thin interphase coating on the surface of each fiber and forming a ceramic or carbon-based matrix within the sample.

  5. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-07-01

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm2, which is 48.76% higher than that of flat system.

  6. Poly (acrylic acid sodium) grafted carboxymethyl cellulose as a high performance polymer binder for silicon anode in lithium ion batteries

    PubMed Central

    Wei, Liangming; Chen, Changxin; Hou, Zhongyu; Wei, Hao

    2016-01-01

    The design of novel binder systems is required for the high capacity silicon (Si) anodes which usually undergo huge volume change during the charge/discharge cycling. Here, we introduce a poly (acrylic acid sodium)-grafted-carboxymethyl cellulose (NaPAA-g-CMC) copolymer as an excellent binder for Si anode in lithium ion batteries (LIBs). The NaPAA-g-CMC copolymer was prepared via a free radical graft polymerization method by using CMC and acrylic acid as precursors. Unlike the linear, one-dimensional binders, the NaPAA-g-CMC copolymer binder is expected to present multi-point interaction with Si surface, resulting in enhanced binding ability with Si particles as well as with the copper (Cu) current collectors, and building a stable solid electrolyte interface (SEI) layer on the Si surface. The NaPAA-g-CMC based Si anode shows much better cycle stability and higher coulombic efficiency than those made with the well-known linear polymeric binders such as CMC and NaPPA. PMID:26786315

  7. Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices

    NASA Astrophysics Data System (ADS)

    Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M.; Calzada, M. Lourdes

    2016-02-01

    Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound - morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) - are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm-2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.

  8. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells.

    PubMed

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-01-01

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm(2), which is 48.76% higher than that of flat system. PMID:27455911

  9. Facile Synthesis of Carbon-Coated Silicon/Graphite Spherical Composites for High-Performance Lithium-Ion Batteries.

    PubMed

    Kim, So Yeun; Lee, Jaewoo; Kim, Bo-Hye; Kim, Young-Jun; Yang, Kap Seung; Park, Min-Sik

    2016-05-18

    A high-performance Si/carbon/graphite composite in which Si nanoparticles are attached onto the surface of natural graphite by carbonization of coal-tar pitch is proposed for use in lithium-ion batteries. This multicomponent structure is favorable for improving Li(+) storage capability because the amorphous carbon layer encapsulating Si nanoparticles offers sufficient electric conductivity and strong elasticity to facilitate relaxation of strain caused by electrochemical reaction of Si during cycles. The Si/carbon/graphite composite exhibits a specific capacity of 712 mAh g(-1) at a constant current density of 130 mA g(-1), and maintains more than 80% of its initial capacity after 100 cycles. Moreover, it shows a high capacity retention of approximately 88% even at a high current density of 5 C (3250 mA g(-1)). On the basis of electrochemical and structural analyses, we suggest that a rational design of the Si/carbon/graphite composite is mainly responsible for delivering a high reversible capacity and stable cycle performance. Furthermore, the proposed synthetic route for the Si/carbon/graphite composite is simple and cost-effective for mass production. PMID:27112916

  10. Rice husks as a sustainable source of nanostructured silicon for high performance Li-ion battery anodes

    PubMed Central

    Liu, Nian; Huo, Kaifu; McDowell, Matthew T.; Zhao, Jie; Cui, Yi

    2013-01-01

    The recovery of useful materials from earth-abundant substances is of strategic importance for industrial processes. Despite the fact that Si is the second most abundant element in the Earth's crust, processes to form Si nanomaterials is usually complex, costly and energy-intensive. Here we show that pure Si nanoparticles (SiNPs) can be derived directly from rice husks (RHs), an abundant agricultural byproduct produced at a rate of 1.2 × 108 tons/year, with a conversion yield as high as 5% by mass. And owing to their small size (10–40 nm) and porous nature, these recovered SiNPs exhibits high performance as Li-ion battery anodes, with high reversible capacity (2,790 mA h g−1, seven times greater than graphite anodes) and long cycle life (86% capacity retention over 300 cycles). Using RHs as the raw material source, overall energy-efficient, green, and large scale synthesis of low-cost and functional Si nanomaterials is possible. PMID:23715238

  11. Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates

    NASA Astrophysics Data System (ADS)

    Park, J. H.; Pepping, J.; Mukhortova, A.; Ketharanathan, S.; Kodama, R.; Zhao, J.; Hansel, D.; Velicu, S.; Aqariden, F.

    2016-09-01

    We report the development of high-performance and low-cost extended short-wavelength infrared (eSWIR) focal-plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates. High-quality n-type eSWIR HgCdTe (cutoff wavelength ˜2.68 μm at 77 K, electron carrier concentration 5.82 × 1015 cm-3) layers were grown on CdTe/Si substrates by MBE. High degrees of uniformity in composition and thickness were demonstrated over three-inch areas, and low surface defect densities (voids 9.56 × 101 cm-2, micro-defects 1.67 × 103 cm-2) were measured. This material was used to fabricate 320 × 256 format, 30 μm pitch FPAs with a planar device architecture using arsenic implantation to achieve p-type doping. The dark current density of test devices showed good uniformity between 190 K and room temperature, and high-quality eSWIR imaging from hybridized FPAs was obtained with a median dark current density of 2.63 × 10-7 A/cm2 at 193 K with a standard deviation of 1.67 × 10-7 A/cm2.

  12. Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates

    NASA Astrophysics Data System (ADS)

    Park, J. H.; Pepping, J.; Mukhortova, A.; Ketharanathan, S.; Kodama, R.; Zhao, J.; Hansel, D.; Velicu, S.; Aqariden, F.

    2016-06-01

    We report the development of high-performance and low-cost extended short-wavelength infrared (eSWIR) focal-plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates. High-quality n-type eSWIR HgCdTe (cutoff wavelength ˜2.68 μm at 77 K, electron carrier concentration 5.82 × 1015 cm-3) layers were grown on CdTe/Si substrates by MBE. High degrees of uniformity in composition and thickness were demonstrated over three-inch areas, and low surface defect densities (voids 9.56 × 101 cm-2, micro-defects 1.67 × 103 cm-2) were measured. This material was used to fabricate 320 × 256 format, 30 μm pitch FPAs with a planar device architecture using arsenic implantation to achieve p-type doping. The dark current density of test devices showed good uniformity between 190 K and room temperature, and high-quality eSWIR imaging from hybridized FPAs was obtained with a median dark current density of 2.63 × 10-7 A/cm2 at 193 K with a standard deviation of 1.67 × 10-7 A/cm2.

  13. Double locked silver-coated silicon nanoparticle/graphene core/shell fiber for high-performance lithium-ion battery anodes

    NASA Astrophysics Data System (ADS)

    Gu, Minsu; Ko, Seunghee; Yoo, Seungmin; Lee, Eunhee; Min, Sa Hoon; Park, Soojin; Kim, Byeong-Su

    2015-12-01

    We present a fabrication of scalable coaxial core/shell silicon (Si)-graphene fiber prepared by dual-nozzle-induced wet-spinning assembly for high-performance Si anode. Over 50 wt% of Si nanoparticles mixed with graphene oxide suspension can be incorporated in the core with the outstanding dispersibility of unique silver-coated Si nanoparticles in aqueous media. The core fiber is further encapsulated by graphene shell which not only provides conducting pathways, but also alleviates severe volume expansion of Si core. This novel core/shell Si anode with double locked graphene architecture delivers more stable cycle performance and superior rate capability than anodes composed of simple mixture of Si-graphene composites.

  14. High performance liquid level monitoring system based on polymer fiber Bragg gratings embedded in silicone rubber diaphragms

    NASA Astrophysics Data System (ADS)

    Marques, Carlos A. F.; Peng, Gang-Ding; Webb, David J.

    2015-05-01

    Liquid-level sensing technologies have attracted great prominence, because such measurements are essential to industrial applications, such as fuel storage, flood warning and in the biochemical industry. Traditional liquid level sensors are based on electromechanical techniques; however they suffer from intrinsic safety concerns in explosive environments. In recent years, given that optical fiber sensors have lots of well-established advantages such as high accuracy, costeffectiveness, compact size, and ease of multiplexing, several optical fiber liquid level sensors have been investigated which are based on different operating principles such as side-polishing the cladding and a portion of core, using a spiral side-emitting optical fiber or using silica fiber gratings. The present work proposes a novel and highly sensitive liquid level sensor making use of polymer optical fiber Bragg gratings (POFBGs). The key elements of the system are a set of POFBGs embedded in silicone rubber diaphragms. This is a new development building on the idea of determining liquid level by measuring the pressure at the bottom of a liquid container, however it has a number of critical advantages. The system features several FBG-based pressure sensors as described above placed at different depths. Any sensor above the surface of the liquid will read the same ambient pressure. Sensors below the surface of the liquid will read pressures that increase linearly with depth. The position of the liquid surface can therefore be approximately identified as lying between the first sensor to read an above-ambient pressure and the next higher sensor. This level of precision would not in general be sufficient for most liquid level monitoring applications; however a much more precise determination of liquid level can be made by linear regression to the pressure readings from the sub-surface sensors. There are numerous advantages to this multi-sensor approach. First, the use of linear regression using

  15. Design of a High-Performance Micro Integrated Surface Plasmon Resonance Sensor Based on Silicon-On-Insulator Rib Waveguide Array.

    PubMed

    Yuan, Dengpeng; Dong, Ying; Liu, Yujin; Li, Tianjian

    2015-01-01

    Based on silicon-on-insulator (SOI) rib waveguide with large cross-section, a micro integrated surface plasmon resonance (SPR) biochemical sensor platform is proposed. SPR is excited at the deeply etched facet of the bend waveguide by the guiding mode and a bimetallic configuration is employed. With the advantages of SOI rib waveguide and the silicon microfabrication technology, an array of the SPR sensors can be composed to implement wavelength interrogation of the sensors' output signal, so the spectrometer or other bulky and expensive equipment are not necessary, which enables the SPR sensor to realize the miniaturization and integration of the entire sensing system. The performances of the SPR sensor element are verified by using the two-dimensional finite-different time-domain method. The parameters of the sensor element and the array are optimized for the achievement of high performance for biochemical sensing application. As a typical example, a single bimetallic SPR sensor with 3 nm Au over 32 nm Al possesses a high sensitivity of 3.968 × 104 nm/RIU, a detection-accuracy of 14.7 μm(-1). For a uniparted SPR sensor, it can achieve a detection limit of 5.04 × 10(-7) RIU. With the relative power measurement accuracy of 0.01 dB, the refractive index variation of 1.14 × 10(-5) RIU can be detected by the SPR sensor array. PMID:26193277

  16. Design of a High-Performance Micro Integrated Surface Plasmon Resonance Sensor Based on Silicon-On-Insulator Rib Waveguide Array

    PubMed Central

    Yuan, Dengpeng; Dong, Ying; Liu, Yujin; Li, Tianjian

    2015-01-01

    Based on silicon-on-insulator (SOI) rib waveguide with large cross-section, a micro integrated surface plasmon resonance (SPR) biochemical sensor platform is proposed. SPR is excited at the deeply etched facet of the bend waveguide by the guiding mode and a bimetallic configuration is employed. With the advantages of SOI rib waveguide and the silicon microfabrication technology, an array of the SPR sensors can be composed to implement wavelength interrogation of the sensors’ output signal, so the spectrometer or other bulky and expensive equipment are not necessary, which enables the SPR sensor to realize the miniaturization and integration of the entire sensing system. The performances of the SPR sensor element are verified by using the two-dimensional finite-different time-domain method. The parameters of the sensor element and the array are optimized for the achievement of high performance for biochemical sensing application. As a typical example, a single bimetallic SPR sensor with 3 nm Au over 32 nm Al possesses a high sensitivity of 3.968 × 104 nm/RIU, a detection-accuracy of 14.7 μm−1. For a uniparted SPR sensor, it can achieve a detection limit of 5.04 × 10−7 RIU. With the relative power measurement accuracy of 0.01 dB, the refractive index variation of 1.14 × 10−5 RIU can be detected by the SPR sensor array. PMID:26193277

  17. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

    NASA Astrophysics Data System (ADS)

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-04-01

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at ‑0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.

  18. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

    PubMed Central

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-01-01

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at −0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature. PMID:27098115

  19. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.

    PubMed

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-01-01

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at -0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm(2)/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature. PMID:27098115

  20. Electrical Characteristics of Low-Temperature Polycrystalline Silicon Complementary Metal-Oxide-Semiconductor Thin-Film Transistors with Six-Step Photomask Structure

    NASA Astrophysics Data System (ADS)

    Lee, Sang-Jin; Park, Jae-Hoon; Oh, Kum-Mi; Lee, Seok-Woo; Lee, Kyung-Eon; Shin, Woo-Sup; Jun, Myung-chul; Yang, Yong-Suk; Hwang, Yong-Kee

    2011-06-01

    We propose two types of six-step photomask, complementary metal-oxide-semiconductor (CMOS), thin-film transistor (TFT) PCT device structures in order to simplify their fabrication process compared with that of conventional, low-temperature, polycrystalline silicon (LTPS) CMOS TFT devices. The initial charge transfer characteristics of both types of six-step PCT are equivalent to those of the conventional nine-step PCT. Both types of six-step PCT are comparable to the conventional nine-step mask lightly doped drain (LDD) device in terms of the dc device lifetime of over 10 years at Vds=5 V for line inversion driving, which is the normally recognized duration time for semiconducting devices.

  1. A high performance micro-pressure sensor based on a double-ended quartz tuning fork and silicon diaphragm in atmospheric packaging

    NASA Astrophysics Data System (ADS)

    Cheng, Rongjun; Li, Cun; Zhao, Yulong; Li, Bo; Tian, Bian

    2015-06-01

    A resonant micro-pressure sensor based on a double-ended quartz tuning fork (DEQTF) and bossed silicon diaphragm in atmospheric packaging is presented. To achieve vacuum-free packaging with a high quality factor, the DEQTF is designed to resonate in an anti-phase vibration mode in a plane that is under the effect of slide-film damping. The feasibility is demonstrated by theoretical analysis and a finite element simulation. The dimensions of the DEQTF and diaphragm are optimized in accordance with the principles of improving sensitivity and minimizing energy dissipation. The sensor chip is fabricated using quartz and silicon micromachining technologies, and simply packaged in a stainless steel shell with standard atmosphere. The experimental setup is established for the calibration, where an additional sensor prototype without a pressure port is introduced as a frequency reference. By detecting the frequency difference of the tested sensor and reference sensor, the influences of environmental factors such as temperature and shocks on measuring accuracy are eliminated effectively. Under the action of a self-excitation circuit, static performance is obtained. The sensitivity of the sensor is 299 kHz kPa-1 in the operating range of 0-10 kPa at room temperature. Testing results shows a nonlinearity of 0.0278%FS, a hysteresis of 0.0207%FS and a repeatability of 0.0375%FS. The results indicate that the proposed sensor has favorable features, which provides a cost-effective and high-performance approach for low pressure measurement.

  2. Characterization of nanometer-thick polycrystalline silicon with phonon-boundary scattering enhanced thermoelectric properties and its application in infrared sensors

    NASA Astrophysics Data System (ADS)

    Zhou, Huchuan; Kropelnicki, Piotr; Lee, Chengkuo

    2014-12-01

    Although significantly reducing the thermal conductivity of silicon nanowires has been reported, it remains a challenge to integrate silicon nanowires with structure materials and electrodes in the complementary metal-oxide-semiconductor (CMOS) process. In this paper, we investigated the thermal conductivity of nanometer-thick polycrystalline silicon (poly-Si) theoretically and experimentally. By leveraging the phonon-boundary scattering, the thermal conductivity of 52 nm thick poly-Si was measured as low as around 12 W mK-1 which is only about 10% of the value of bulk single crystalline silicon. The ZT of n-doped and p-doped 52 nm thick poly-Si was measured as 0.067 and 0.024, respectively, while most previously reported data had values of about 0.02 and 0.01 for a poly-Si layer with a thickness of 0.5 μm and above. Thermopile infrared sensors comprising 128 pairs of thermocouples made of either n-doped or p-doped nanometer-thick poly-Si strips in a series connected by an aluminium (Al) metal interconnect layer are fabricated using microelectromechanical system (MEMS) technology. The measured vacuum specific detectivity (D*) of the n-doped and p-doped thermopile infrared (IR) sensors are 3.00 × 108 and 1.83 × 108 cm Hz1/2 W-1 for sensors of 52 nm thick poly-Si, and 5.75 × 107 and 3.95 × 107 cm Hz1/2 W-1 for sensors of 300 nm thick poly-Si, respectively. The outstanding thermoelectric properties indicate our approach is promising for diverse applications using ultrathin poly-Si technology.Although significantly reducing the thermal conductivity of silicon nanowires has been reported, it remains a challenge to integrate silicon nanowires with structure materials and electrodes in the complementary metal-oxide-semiconductor (CMOS) process. In this paper, we investigated the thermal conductivity of nanometer-thick polycrystalline silicon (poly-Si) theoretically and experimentally. By leveraging the phonon-boundary scattering, the thermal conductivity of 52 nm

  3. Exploration of maximum count rate capabilities for large-area photon counting arrays based on polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua

    2016-03-01

    Pixelated photon counting detectors with energy discrimination capabilities are of increasing clinical interest for x-ray imaging. Such detectors, presently in clinical use for mammography and under development for breast tomosynthesis and spectral CT, usually employ in-pixel circuits based on crystalline silicon - a semiconductor material that is generally not well-suited for economic manufacture of large-area devices. One interesting alternative semiconductor is polycrystalline silicon (poly-Si), a thin-film technology capable of creating very large-area, monolithic devices. Similar to crystalline silicon, poly-Si allows implementation of the type of fast, complex, in-pixel circuitry required for photon counting - operating at processing speeds that are not possible with amorphous silicon (the material currently used for large-area, active matrix, flat-panel imagers). The pixel circuits of two-dimensional photon counting arrays are generally comprised of four stages: amplifier, comparator, clock generator and counter. The analog front-end (in particular, the amplifier) strongly influences performance and is therefore of interest to study. In this paper, the relationship between incident and output count rate of the analog front-end is explored under diagnostic imaging conditions for a promising poly-Si based design. The input to the amplifier is modeled in the time domain assuming a realistic input x-ray spectrum. Simulations of circuits based on poly-Si thin-film transistors are used to determine the resulting output count rate as a function of input count rate, energy discrimination threshold and operating conditions.

  4. High Performance Photovoltaic Project Overview

    SciTech Connect

    Symko-Davies, M.; McConnell, R.

    2005-01-01

    The High-Performance Photovoltaic (HiPerf PV) Project was initiated by the U.S. Department of Energy to substantially increase the viability of photovoltaics (PV) for cost-competitive applications so that PV can contribute significantly to our energy supply and environment in the 21st century. To accomplish this, the National Center for Photovoltaics (NCPV) directs in-house and subcontracted research in high-performance polycrystalline thin-film and multijunction concentrator devices. In this paper, we describe the recent research accomplishments in the in-house directed efforts and the research efforts under way in the subcontracted area.

  5. Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

    DOEpatents

    Findikoglu, Alp T.; Jia, Quanxi; Arendt, Paul N.; Matias, Vladimir; Choi, Woong

    2009-10-27

    A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

  6. Fundamental studies of grain boundary passivation in polycrystalline silicon with application to improved photovoltaic devices. A final research report covering work completed from February-December 1979

    SciTech Connect

    Seager, C.H.; Ginley, D.S.

    1980-02-01

    Several aspects of the electrical properties of silicon grain boundaries have been studied. The temperature dependence of the zero-bias conductance and capacitance of single boundaries has been measured and shown to be in good agreement with a simple double depletion layer/thermal emission (DDL/TE) model developed to predict the transport properties of such structures. In addition, it has been shown that deconvolution of the I-V properties of some boundaries via a deconvolution scheme suggested by Pike and Seager yields effective one-electron densities of trapping states which are in good agreement with estimates obtained by low temperature electron emission measurements. Experiments have also been performed which indicate that diffusion of atomic hydrogen into silicon grain boundaries greatly reduces this density of trapping states. In properly prepared, large grained polycrystalline samples all measurable traces of grain boundary potential barriers can be removed to substantial penetration depths after several hours exposure to a hydrogen plasma at elevated temperatures. Initial experiments on prototype polysilicon solar cells have shown that this passivation process can improve AM1 efficiencies. In order to more fully understand and develop this process for improving practical multigrained cells, several device research efforts with other DOE/SERI funded contractors have been initiated.

  7. Deposition, fabrication and analysis of polycrystalline silicon MIS solar cells. Final Report, January 1-December 31, 1979

    SciTech Connect

    Anderson, W.A.

    1980-03-01

    Discussion of MIS cell fabrication techniques, protovoltaic response data, I-V-T analysis to reveal conduction mechanisms, a detailed computer model, optimum MIS solar cell design, surface state effects, Auger studies, reliability studies and e-beam deposition of thin silicon films are included. The most important features of the work during 1979 include the one pump-down fabrication process, establishing a consistent fabrication sequence, achieving 13% efficiency of 2 cm/sup 2/ area, an evaluation of conduction mechanisms, establishing a detailed computer model and setting up an improved e-beam system to deposit thin silicon films. Details are reported. (WHK)

  8. Photovoltaic mechanisms in polycrystalline thin film silicon solar cells. Final report, 30 June 1979-29 June 1980

    SciTech Connect

    Sopori, B.L.

    1980-11-01

    The objectives of this program were: (1) to develop appropriate measurement techniques to facilitate a quantitative study of the electrical activity of structural defects and at a grain boundary (G.B.) in terms of generation-recombination, barrier height, and G.B. conductivity; (2) to characterize G.B.s in terms of physical properties such as angle of misfit and local stress, and to correlate them with the electrical activity; (3) to determine the influence of solar cell processing on the electrical behavior of structural defects and G.B.s; and (4) to evaluate polycrystalline solar cell performance based on the above study, and to compare it with the experimentally measured performance. Progress is reported in detail. (WHK)

  9. Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor

    SciTech Connect

    Hashimoto, Masaki; Kanomata, Kensaku; Momiyama, Katsuaki; Kubota, Shigeru; Hirose, Fumihiko

    2012-01-09

    In this study, we developed a measurement method for field-effect-carrier mobility across a single grain boundary in polycrystalline Si (poly Si) used for solar cell production by using an organic gate field-effect transistor (FET). To prevent precipitation and the diffusion of impurities affecting the electronic characteristics of the grain boundary, all the processing temperatures during FET fabrication were held below 150 deg. C. From the grain boundary, the field-effect mobility was measured at around 21.4 cm{sup 2}/Vs at 297 K, and the temperature dependence of the field-effect mobility suggested the presence of a potential barrier of 0.22 eV at the boundary. The technique presented here is applicable for the monitoring of carrier conduction characteristics at the grain boundary in poly Si used for the production of solar cells.

  10. Thin film polycrystalline silicon solar cells. Quarterly technical progress report No. 3, 1 April 1980-30 June 1980

    SciTech Connect

    Sarma, K. R.; Rice, M. J.; Legge, R.; Ellis, R. J.

    1980-06-01

    During this third quarter of the program, the high pressure plasma (hpp) deposition process has been thoroughly evaluated using SiHCl/sub 3/ and SiCl/sub 4/ silicon source gases, by the gas chromatographic analysis of the effluent gases from the reactor. Both the deposition efficiency and reactor throughput rate were found to be consistently higher for hpp mode of operation compared to conventional CVD mode. The figure of merit for various chlorosilanes as a silicon source gas for hpp deposition is discussed. A new continuous silicon film deposition scheme is developed, and system design is initiated. This new system employs gas interlocks and eliminates the need for gas curtains which have been found to be problematic. Solar cells (2 cm x 2 cm area) with AM1 efficiencies of up to 12% were fabricated on RTR grain enhanced hpp deposited films. The parameters of a 12% cell under simulated AM1 illumination were: V/sub OC/ = 0.582 volts, J/sub SC/ = 28.3 mA/cm/sup 2/ and F.F. = 73.0%.

  11. Chemical speciation at buried interfaces in high-temperature processed polycrystalline silicon thin-film solar cells on ZnO:Al

    NASA Astrophysics Data System (ADS)

    Becker, Christiane; Pagels, Marcel; Zachäus, Carolin; Pollakowski, Beatrix; Beckhoff, Burkhard; Kanngießer, Birgit; Rech, Bernd

    2013-01-01

    The combination of polycrystalline silicon (poly-Si) thin films with aluminum doped zinc oxide layers (ZnO:Al) as transparent conductive oxide enables the design of appealing optoelectronic devices at low costs, namely in the field of photovoltaics. The fabrication of both thin-film materials requires high-temperature treatments, which are highly desired for obtaining a high electrical material quality. Annealing procedures are typically applied during crystallization and defect-healing processes for silicon and can boost the carrier mobility and conductivity of ZnO:Al layers. In a combined poly-Si/ZnO:Al layer system, an in-depth knowledge of the interaction of both layers and the control of interface reactions upon thermal treatments is crucial. Therefore, we analyze the influence of rapid thermal treatments up to 1050 °C on solid phase crystallized poly-Si thin-film solar cells on ZnO:Al-coated glass, focusing on chemical interface reactions and modifications of the poly-Si absorber material quality. The presence of a ZnO:Al layer in the solar cell stack was found to limit the poly-Si solar cell performance with open circuit voltages only below 390 mV (compared to 435 mV without ZnO film), even if a silicon nitride (SiN) diffusion barrier was included. A considerable amount of diffused zinc inside the silicon was observed. By grazing-incidence X-ray fluorescence spectrometry, a depth-resolving analysis of the elemental composition close to the poly-Si/(SiN)/ZnO:Al interface was carried out. Temperatures above 1000 °C were found to promote the formation of new chemical compounds within about 10 nm of interface, such as zinc silicates (Zn2SiO4) and aluminium oxide (AlxOy). These results give valuable insights about the temperature-limitations of Si/ZnO thin-film solar cell fabrication and the formation of high-mobility ZnO-layers by thermal anneal.

  12. Evaluation of three partially volatile neutron shields for high-performance shipping casks. [Thermal stability, mechanical properties of borated silicone rubbers and wood

    SciTech Connect

    Rack, H.J.; Pearson, H.S.

    1981-02-01

    The thermal stability and mechanical behavior of three partially volatile candidate neutron shield materials have been evaluated. The results indicate that silicone based rubbers, impregnated with elemental boron or boron carbide, Boro-silicone 236 and Bisco NS-I respectively are more thermally stable than are borated beechwoods, e.g., Permali JN. Mechanical property measurements indicated however that the compressive strength of the borated beechwood is 10 to 48 times higher than that of the silicone-based rubbers. The compressive strengths of the borated beechwood and boron carbide impregnated silicone rubber were substantially more sensitive to test temperature than was the compressive strength of the boron impregnated silicone rubber. Finally the compressive strengths and energy absorbing capability of the boron impregnated silicone rubber is not affected by prior thermal exposure at 425/sup 0/K for 1000h.

  13. Process for utilizing low-cost graphite substrates for polycrystalline solar cells

    NASA Technical Reports Server (NTRS)

    Chu, T. L. (Inventor)

    1978-01-01

    Low cost polycrystalline silicon solar cells supported on substrates were prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices were formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon was substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.

  14. Improvement of polycrystalline silicon wafer solar cell efficiency by forming nanoscale pyramids on wafer surface using a self-mask etching technique

    PubMed Central

    Lin, Hsin-Han; Chen, Wen-Hwa; Hong, Franklin C.-N.

    2013-01-01

    The creation of nanostructures on polycrystalline silicon wafer surface to reduce the solar reflection can enhance the solar absorption and thus increase the solar-electricity conversion efficiency of solar cells. The self-masking reactive ion etching (RIE) was studied to directly fabricate nanostructures on silicon surface without using a masking process for antireflection purpose. Reactive gases comprising chlorine (Cl2), sulfur hexafluoride (SF6), and oxygen (O2) were activated by radio-frequency plasma in an RIE system at a typical pressure of 120–130 mTorr to fabricate the nanoscale pyramids. Poly-Si wafers were etched directly without masking for 6–10 min to create surface nanostructures by varying the compositions of SF6, Cl2, and O2 gas mixtures in the etching process. The wafers were then treated with acid (KOH:H2O = 1:1) for 1 min to remove the damage layer (100 nm) induced by dry etching. The damage layer significantly reduced the solar cell efficiencies by affecting the electrical properties of the surface layer. The light reflectivity from the surface after acid treatment could be significantly reduced to <10% for the wavelengths between 500 and 900 nm. The effects of RIE and surface treatment conditions on the surface nanostructures and the optical performance as well as the efficiencies of solar cells will be presented and discussed. The authors have successfully fabricated large-area (156 × 156 mm2) subwavelength antireflection structure on poly-Si substrates, which could improve the solar cell efficiency reproducibly up to 16.27%, higher than 15.56% using wet etching. PMID:23847751

  15. High-speed and high-efficiency Si optical modulator with MOS junction, using solid-phase crystallization of polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    Fujikata, Junichi; Takahashi, Masashi; Takahashi, Shigeki; Horikawa, Tsuyoshi; Nakamura, Takahiro

    2016-04-01

    We developed a high-speed and high-efficiency MOS-capacitor-type Si optical modulator (Si-MOD) by applying a low optical loss and a low resistivity of a polycrystalline silicon (poly-Si) gate with large grains. To achieve a low resistivity of a poly-Si film, a P-doped poly-Si film based on Si2H6 solid-phase crystallization (SPC) was developed, which showed a comparable resistivity to that of P-doped single-crystal Si. In addition, high-temperature annealing (HTA) after SPC was effective for realizing low optical loss. We designed the optimum Si-MOD structure and demonstrated a very high modulation efficiency of 0.3 V cm, which is very efficient among the Si-MODs developed thus far. High-speed (15 Gbps) operation was achieved with a small footprint of the 200-µm-long phase shifter and a low drive voltage of 1.5 Vpp at a low optical insertion loss of -2.2 dB and 1.55 µm wavelength.

  16. Reliability in Short-Channel p-Type Polycrystalline Silicon Thin-Film Transistor under High Gate and Drain Bias Stress

    NASA Astrophysics Data System (ADS)

    Choi, Sung-Hwan; Kim, Sun-Jae; Mo, Yeon-Gon; Kim, Hye-Dong; Han, Min-Koo

    2010-03-01

    We have investigated the electrical characteristics of short-channel p-type excimer laser annealed (ELA) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) under high gate and drain bias stress. We found that the threshold voltage of short-channel TFTs was significantly shifted in the negative direction owing to high gate and drain bias stress (ΔVTH = -2.08 V), whereas that of long-channel TFTs was rarely shifted in the negative direction (ΔVTH = -0.10 V). This negative shift of threshold voltage in the short-channel TFT may be attributed to interface state generation near the source junction and deep trap state creation near the drain junction between the poly-Si film and the gate insulator layer. It was also found that the gate-to-drain capacitance (CGD) characteristic of the stressed TFT severely stretched for the gate voltage below the flat band voltage VFB. The effects of high gate and drain bias stress are related to hot-hole-induced donor like interface state generation. The transfer characteristics of the forward and reverse modes after the high gate and drain bias stress also indicate that the interface state generation at the gate insulator/channel interface occurred near the source junction region.

  17. Reliability in Short-Channel p-Type Polycrystalline Silicon Thin-Film Transistor under High Gate and Drain Bias Stress

    NASA Astrophysics Data System (ADS)

    Sung-Hwan Choi,; Sun-Jae Kim,; Yeon-Gon Mo,; Hye-Dong Kim,; Min-Koo Han,

    2010-03-01

    We have investigated the electrical characteristics of short-channel p-type excimer laser annealed (ELA) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) under high gate and drain bias stress. We found that the threshold voltage of short-channel TFTs was significantly shifted in the negative direction owing to high gate and drain bias stress (Δ VTH = -2.08 V), whereas that of long-channel TFTs was rarely shifted in the negative direction (Δ VTH = -0.10 V). This negative shift of threshold voltage in the short-channel TFT may be attributed to interface state generation near the source junction and deep trap state creation near the drain junction between the poly-Si film and the gate insulator layer. It was also found that the gate-to-drain capacitance (CGD) characteristic of the stressed TFT severely stretched for the gate voltage below the flat band voltage VFB. The effects of high gate and drain bias stress are related to hot-hole-induced donor like interface state generation. The transfer characteristics of the forward and reverse modes after the high gate and drain bias stress also indicate that the interface state generation at the gate insulator/channel interface occurred near the source junction region.

  18. High quality SiO2/Si interfaces of poly-crystalline silicon thin film transistors by annealing in wet atmosphere

    NASA Astrophysics Data System (ADS)

    Sano, Naoki; Sekiya, Mitsunobu; Hara, Masaki; Kohno, Atsushi; Sameshima, Toshiyuki

    1995-05-01

    A new post-metallization annealing technique was developed to improve the quality of metal-oxide-semiconductor (MOS) devices using SiO2 films formed by a parallel-plate remote plasma chemical vapor deposition as gate insulators. The quality of the interface between SiO2 and crystalline Si was investigated by capacitance-voltage (C-V) measurements. An H2O vapor annealing at 270 C for 30 min efficiently decreased the interface trap density to 2.0 x 10(exp 10) cm(exp -2) eV(exp -1), and the effective oxide charge density from 1 x 10(exp 12) to 5 x 10(exp 9) cm(exp -2). This annealing process was also applied to the fabrication of Al-gate polycrystalline silicon thin film transistors (poly-Si TFT's) at 270 C. In p-channel poly-Si TFT's, the carrier mobility increased from 60-400 cm(exp 2) V(exp -1) s(exp - 1) and the threshold voltage decreased from - 5.5 to - 1.7 V.

  19. Stress-Induced Off-Current under On- and Off-State Stress Voltages in Low-Temperature n-Channel Polycrystalline Silicon Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Seishiro Hirata,; Toshifumi Satoh,; Hiroyuki Tango,

    2010-03-01

    The changes in off-current under on- and off-state stress voltages in n-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs) are investigated through measurements and simulations. It is found that the off-current increases markedly in the shallow-negative-gate-voltage region and decreases in the deep-gate-voltage region after applying both on- and off-state stresses, resulting in a weaker dependence on negative gate voltage. It can be supposed from the simulations and experiments that the donor-type trap states (positive charges) with a hump-type state profile, located at 0.1-0.2 eV below the midgap, and tail states are generated near the drain junction after applying both stresses. The amount of donor-type states increases in phonon-assisted tunneling with the Pool-Frenkel effect (PAT) and Schockley-Read-Hall generation (SRH) owing to the increase in the deep-trap-state density, and decreases in band-to-band tunneling (BBT) owing to the decrease in electric field, giving rise to a predominant PAT+SRH current in off-current in a wide-negative-gate-voltage region.

  20. Polycrystalline silicon thin-film transistor with nickel-titanium oxide by sol-gel spin-coating and nitrogen implantation

    NASA Astrophysics Data System (ADS)

    Wu, Shih-Chieh; Hou, Tuo-Hung; Chuang, Shiow-Huey; Chou, Hsin-Chih; Chao, Tien-Sheng; Lei, Tan-Fu

    2012-12-01

    This study demonstrates polycrystalline silicon thin-film transistors (poly-Si TFTs) integrated with a high-κ nickel-titanium oxide (NiTiO3) gate dielectric using sol-gel spin-coating and nitrogen channel implantation. This novel fabrication method of the high-κ NiTiO3 gate dielectric offers thin equivalent-oxide thickness and high gate capacitance density, favorable for increasing the current driving capability. Introducing nitrogen ions into the poly-Si using implantation effectively passivates the trap states not only in the poly-Si channel but also at the gate dielectric/poly-Si interface. The poly-Si NiTiO3 TFTs with nitrogen implantation exhibit significantly improved electrical characteristics, including lower threshold voltage, a steeper subthreshold swing, higher field-effect mobility, a larger on/off current ratio, and less threshold-voltage roll-off. Furthermore, the nitrogen implantation improves the reliability of poly-Si NiTiO3 TFTs against hot-carrier stress and positive bias temperature instability.

  1. Abnormal Threshold Voltage Shifts in P-Channel Low-Temperature Polycrystalline Silicon Thin Film Transistors Under Negative Bias Temperature Stress.

    PubMed

    Kim, Sang Sub; Choi, Pyung Ho; Baek, Do Hyun; Lee, Jae Hyeong; Choi, Byoung Deog

    2015-10-01

    In this research, we have investigated the instability of P-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS TFTs) with double-layer SiO2/SiNx dielectrics. A negative gate bias temperature instability (NBTI) stress was applied and a turn-around behavior phenomenon was observed in the Threshold Voltage Shift (Vth). A positive threshold voltage shift occurs in the first stage, resulting from the negative charge trapping at the SiNx/SiO2 dielectric interface being dominant over the positive charge trapping at dielectric/Poly-Si interface. Following a stress time of 7000 s, the Vth switches to the negative voltage direction, which is "turn-around" behavior. In the second stage, the Vth moves from -1.63 V to -2 V, overwhelming the NBTI effect that results in the trapping of positive charges at the dielectric/Poly-Si interface states and generating grain-boundary trap states and oxide traps. PMID:26726370

  2. Exploratory development of thin-film polycrystalline silicon photovoltaic devices. Report No. 3. Electron beam ribbon-to-ribbon (EB RTR) recrystallization of microcrystalline silicon ribbons

    SciTech Connect

    Gurtler, R.W.

    1981-09-01

    The electron beam has been applied as the energy source for ribbon-to-ribbon (RTR) recrystallization of thin-film silicon with very small (approx. 1 ..mu..m) grains into sheets with very large grains (> 1 cm). The system described uses two e-guns, one for producing a thin molten region across the microcrystalline ribbon (except for the edges), the other for establishing desirable thermal profiles in the cool-down (and heat-up) regions. In this way, no furnace, heat shield, or cooling structures are present, in contrast to all the other ribbon growing techniques. This simple arrangement is gained at the (reasonable) expense of having to work in a vacuum. A CCTV camera observes the temperature distribution and melt shape during growth; its output is coupled to a real-time image analyzer system and a computer. When there is a need to alter the temperature or melt shape in a region, the deflection/modulation circuitry is appropriately instructed, and (closing the loop) the change is made. The vacuum chamber with cassette feed for ribbons, electron guns, and camera, was completed and placed in operation. The overall system was run with a fined temperature profile for small RTR samples; resulting thin-film silicon ribbon quality was comparable to that obtained with laser beam RTR. The entire electronic system was not finished, however, so potential utility of the system for improving silicon ribbon quality and economics could not be ascertained.

  3. Transformational silicon electronics.

    PubMed

    Rojas, Jhonathan Prieto; Torres Sevilla, Galo Andres; Ghoneim, Mohamed Tarek; Inayat, Salman Bin; Ahmed, Sally M; Hussain, Aftab Mustansir; Hussain, Muhammad Mustafa

    2014-02-25

    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry's most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. PMID:24476361

  4. Nanopattern-guided growth of single-crystal silicon on amorphous substrates and high-performance sub-100 nm thin-film transistors for three-dimensional integrated circuits

    NASA Astrophysics Data System (ADS)

    Gu, Jian

    /off current ratio, device-to-device uniformity etc. Two-dimensional device simulations show that PaTH TFTs are comparable to silicon-on-insulator (SOI) devices, making it a promising candidate for the fabrication of future high performance, low-power 3D integrated circuits. Finally, an ultrafast nanolithography technique, laser-assisted direct imprint (LADI) is introduced. LADI shows the ability of patterning nanostructures directly in silicon in nanoseconds with sub-10 nm resolution. The process has potential applications in multiple disciplines, and could be extended to other materials and processes.

  5. Performance Enhancement of Silicon Alloy-Based Anodes Using Thermally Treated Poly(amide imide) as a Polymer Binder for High Performance Lithium-Ion Batteries.

    PubMed

    Yang, Hwi Soo; Kim, Sang-Hyung; Kannan, Aravindaraj G; Kim, Seon Kyung; Park, Cheolho; Kim, Dong-Won

    2016-04-01

    The development of silicon-based anodes with high capacity and good cycling stability for next-generation lithium-ion batteries is a very challenging task due to the large volume changes in the electrodes during repeated cycling, which results in capacity fading. In this work, we synthesized silicon alloy as an active anode material, which was composed of silicon nanoparticles embedded in Cu-Al-Fe matrix phases. Poly(amide imide)s, (PAI)s, with different thermal treatments were used as polymer binders in the silicon alloy-based electrodes. A systematic study demonstrated that the thermal treatment of the silicon alloy electrodes at high temperature made the electrodes mechanically strong and remarkably enhanced the cycling stability compared to electrodes without thermal treatment. The silicon alloy electrode thermally treated at 400 °C initially delivered a discharge capacity of 1084 mAh g(-1) with good capacity retention and high Coulombic efficiency. This superior cycling performance was attributed to the strong adhesion of the PAI binder resulting from enhanced secondary interactions, which maintained good electrical contacts between the active materials, electronic conductors, and current collector during cycling. These findings are supported by results from X-ray photoelectron spectroscopy, scanning electron microscopy, and a surface and interfacial cutting analysis system. PMID:27008091

  6. Developmental testing of partially volatile neutron shields for high-performance shipping casks. [Boro-silicone 236; BISCO NS-I; Permali JN

    SciTech Connect

    Pope, R.B.; Allen, G.C.; Rack, H.J.; Joseph, B.J.; Dupree, S.A.

    1980-01-01

    Results of the phase one tests have demonstrated that the neutron-shielding concept described in this paper is a viable design option for spent fuel shipping casks. The tests have shown that the Boro-silicone 236 shield is superior to the other shield materials considered. Repeated TGA, aging and fire tests demonstrated the reliability of the data. A second phase of the test program is now being pursued where the Boro-silicone 236 is injected into all-steel slab sections, and cured in place. 5 tables.

  7. Hierarchical silicon nanowires-carbon textiles matrix as a binder-free anode for high-performance advanced lithium-ion batteries.

    PubMed

    Liu, Bin; Wang, Xianfu; Chen, Haitian; Wang, Zhuoran; Chen, Di; Cheng, Yi-Bing; Zhou, Chongwu; Shen, Guozhen

    2013-01-01

    Toward the increasing demands of portable energy storage and electric vehicle applications, the widely used graphite anodes with significant drawbacks become more and more unsuitable. Herein, we report a novel scaffold of hierarchical silicon nanowires-carbon textiles anodes fabricated via a facile method. Further, complete lithium-ion batteries based on Si and commercial LiCoO2 materials were assembled to investigate their corresponding across-the-aboard performances, demonstrating their enhanced specific capacity (2950 mAh g(-1) at 0.2 C), good repeatability/rate capability (even >900 mAh g(-1) at high rate of 5 C), long cycling life, and excellent stability in various external conditions (curvature, temperature, and humidity). Above results light the way to principally replacing graphite anodes with silicon-based electrodes which was confirmed to have better comprehensive performances. PMID:23572030

  8. Hierarchical silicon nanowires-carbon textiles matrix as a binder-free anode for high-performance advanced lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Liu, Bin; Wang, Xianfu; Chen, Haitian; Wang, Zhuoran; Chen, Di; Cheng, Yi-Bing; Zhou, Chongwu; Shen, Guozhen

    2013-04-01

    Toward the increasing demands of portable energy storage and electric vehicle applications, the widely used graphite anodes with significant drawbacks become more and more unsuitable. Herein, we report a novel scaffold of hierarchical silicon nanowires-carbon textiles anodes fabricated via a facile method. Further, complete lithium-ion batteries based on Si and commercial LiCoO2 materials were assembled to investigate their corresponding across-the-aboard performances, demonstrating their enhanced specific capacity (2950 mAh g-1 at 0.2 C), good repeatability/rate capability (even >900 mAh g-1 at high rate of 5 C), long cycling life, and excellent stability in various external conditions (curvature, temperature, and humidity). Above results light the way to principally replacing graphite anodes with silicon-based electrodes which was confirmed to have better comprehensive performances.

  9. Novel silicon and tin alloy nano-particulate materials via spark erosion for high performance and high capacity anodes in lithium ion batteries

    NASA Astrophysics Data System (ADS)

    White, Emma Marie Hamilton

    The advent and popularity of portable electronics, as well as the need to reduce carbon-based fuel dependence for environmental and economic reasons, has led to the search for higher energy density portable power storage methods. Lithium ion batteries offer the highest energy density of any portable energy storage technology, but their potential is limited by the currently used materials. Theoretical capacities of silicon (3580 mAh/g) and tin (990 mAh/g) are significantly higher than existing graphitic anodes (372 mAh/g). However, silicon and tin must be scaled down to the nano-level to mitigate the pulverization from drastic volume changes in the anode structure during lithium ion insertion/extraction. The available synthesis techniques for silicon and tin nano-particles are complicated and scale-up is costly. A unique one-step process for synthesizing Si-Sn alloy and Sn nano-particles via spark plasma erosion has been developed to achieve the ideal nano-particulate size and carbon coating architecture. Spark erosion produces crystalline and amorphous spherical nano-particles, averaging 5-500nm in diameter. Several tin and silicon alloys have been spark eroded and thoroughly characterized using SEM, TEM, EDS, XPS, Auger spectroscopy, NMR spectroscopy and TGA. The resulting nano-particles show improved performance as anodes over commercialized materials. In particular, pure sparked Sn particles show stable reversible capacity at ˜460 mAh/g with >99.5% coulombic efficiency for over 100 cycles. These particles are drop-in ready for existing commercial anode processing techniques and by only adding 10% of the sparked Sn particles the total current cell capacity will increase by ˜13%.

  10. Nanoscale deformation and fracture mechanics of polycrystalline silicon and diamond-like carbon for MEMS by the AFM/DIC method

    NASA Astrophysics Data System (ADS)

    Cho, Sung Woo

    A method for nanoscale experimental mechanics was developed to address problems in deformation and fracture of micron-scale components in Microelectromechanical Systems (MEMS). Specifically, the effective and local, elastic and fracture behavior of polycrystalline silicon (polysilicon) and tetrahedral amorphous diamond-like carbon (ta-C) were studied using freestanding thin films subject to uniaxial tension. In this method, direct measurements of local deformations were derived from Atomic Force Microscopy (AFM) images in specimen areas varying between 1x2 mum2 and 15x15 mum2 using Digital Image Correlation (DIC) to extract displacements and strains with spatial resolution of 1-2 nm. The effective elastic modulus and Poisson's ratio of polysilicon and ta-C from the Sandia National Laboratories (SUMMiT) were 155 +/- 6 GPa and 0.22 +/- 0.02, and 759 +/- 22 GPa and 0.17 +/- 0.03, respectively. Similarly, the elastic modulus and Poisson's ratio of polysilicon fabricated at MCNC via the Multi-User MEMS Processes (MUMPs) with <110> texture were 164 +/- 7 GPa and 0.22 +/- 0.02, respectively. A second problem studied using the AFM/DIC method was the fracture of polysilicon in the presence of atomically sharp cracks. The effective (macroscopic) Mode-I critical stress intensity factor for polysilicon from different MUMPs runs was 1.00 +/- 0.1 MPa√m, where 0.1 MPa√m was the standard deviation, attributed to local cleavage anisotropy and grain boundary toughening. The variation in the effective critical stress intensity factor and the subcritical crack growth of polysilicon that was spatially recorded and quantified for the first time were the result of the spatial variation of the 4 local stress intensity factor at the crack tip that controlled crack initiation and thus, the overall fracture process. The AFM/DIC method was also applied to determine the minimum size of a polysilicon domain whose effective mechanical behavior could be described by the isotropic elastic

  11. Buried oxide layer in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  12. High-performance characteristics of silicon inverse opal synthesized by the simple magnesium reduction as anodes for lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Jeong, Jae-Hun; Kim, Kwang-Hyun; Jung, Dong-Won; Kim, Ketack; Lee, Sung-Man; Oh, Eun-Suok

    2015-12-01

    Inverse silicon opal (ISi) and carbon-coated inverse Si opal (C-ISi) structures are prepared from the simple thermal reduction method using magnesium and investigated as the anode materials in lithium-ion batteries. The ISi and C-ISi samples comprise continuously arranged inverse opal structures, constructed by Si nanoparticles. The macroporous structures in ∼1 μm range are favourable for lithium-ion transport and more importantly for absorbing volumetric change in the silicon nanoparticles. Moreover, the carbon coating on the inverse Si opal improves the electrical conductivity and acts as a mechanical buffer for the volume change. C-ISi sample shows a high capacity of 1550 mAh g-1 at the 100th cycle with very stable cycle retention, whereas the ISi and pristine Si samples show 1146.4 mAh g-1 and approximately zero, respectively, at the 100th cycle with rapid capacity fading. Surprisingly, the volumetric expansion of C-ISi electrode after 100th cycles is only 16.1%, which is as low as that for commercial graphite electrodes.

  13. High-performance uncooled amorphous silicon video graphics array and extended graphics array infrared focal plane arrays with 17-μm pixel pitch

    NASA Astrophysics Data System (ADS)

    Tissot, Jean-Luc; Tinnes, Sébastien; Durand, Alain; Minassian, Christophe; Robert, Patrick; Vilain, Michel; Yon, Jean-Jacques

    2011-06-01

    The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon with 45, 35, and 25 μm enables ULIS to develop video graphics array (VGA) and extended graphics array (XGA) infrared focal plane array (IRFPA) formats with 17-μm pixel pitch to fulfill every application. These detectors keep all the recent innovations developed on the 25-μm pixel-pitch read out integrated circuit (ROIC) (detector configuration by serial link, low power consumption, and wide electrical dynamic range). The specific appeal of these units lies in the high spatial resolution it provides while keeping the small thermal time constant. The reduction of the pixel pitch turns the VGA array into a product well adapted for high-resolution and compact systems and the XGA a product well adapted for high-resolution imaging systems. High electro-optical performances have been demonstrated with noise equivalent temperature difference (NETD) < 50 mK. We insist on NETD and wide thermal dynamic range trade-off, and on the high characteristics uniformity achieved thanks to the mastering of the amorphous silicon technology as well as the ROIC design. This technology node paves the way to high-end products as well as low-end, compact, smaller formats, such as 320 × 240 and 160 × 120 or smaller.

  14. Upgrading Metallurgical-Grade Silicon

    NASA Technical Reports Server (NTRS)

    Woerner, L. M.; Moore, E. B.

    1985-01-01

    Closed-loop process produces semiconductor-grade silicon. Metallurgical-grade silicon converted to ultrapure silicon by reacting with hydrogen and silicon tetrahalide to form trihalosilane, purifying this intermediate and again decomposing to high purity silicon in third stage. Heterogeneously and homogeneously nucleated polycrystalline silicon used in semiconductor device applications and in silicon photovoltaic solar cell fabrication.

  15. Polycrystalline thin film photovoltaic technology

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  16. Top-Coating Silicon Onto Ceramic

    NASA Technical Reports Server (NTRS)

    Heaps, J. D.; Nelson, L. D.; Zook, J. D.

    1985-01-01

    Polycrystalline silicon for solar cells produced at low cost. Molten silicon poured from quartz trough onto moving carbon-coated ceramic substrate. Doctor blade spreads liquid silicon evenly over substrate. Molten material solidifies to form sheet of polycrystalline silicon having photovoltaic conversion efficiency greater than 10 percent. Method produces 100-um-thick silicon coatings at speed 0.15 centimeter per second.

  17. 3D silver nanoparticles decorated zinc oxide/silicon heterostructured nanomace arrays as high-performance surface-enhanced Raman scattering substrates.

    PubMed

    Huang, Jian; Chen, Feng; Zhang, Qing; Zhan, Yonghua; Ma, Dayan; Xu, Kewei; Zhao, Yongxi

    2015-03-18

    Three-dimensional (3D) hierarchical nanostructures have been considered as one of the most promising surface-enhanced Raman spectroscopy (SERS) substrates because of the ordered arrangement of high-density hotspots along the third dimension direction. Herein, we reported a unique 3D nanostructure for SERS detection based on silver nanoparticles (AgNPs) decorated zinc oxide/silicon (ZnO/Si) heterostructured nanomace arrays. They were prepared by two steps: (1) Si nanoneedles were grafted onto ZnO nanorod arrays via a catalyst-assisted vapor-liquid-solid (VLS) growth mechanism. (2) AgNPs were rapidly immobilized on the surface of nanomaces by a facile galvanic displacement reaction. The fabricated substrates were employed to detect rhodamine 6G (R6G) with a detection limit down to 10(-16) M, and exhibited a high-enhanced performance (enhancement factor (EF) as high as 8.7 × 10(7)). To illustrate the potential value of the prepared substrates, the different concentrations of melamine aqueous solution (from 10(-4) to 10(-10) M) were detected, and a quantitative relationship between the SERS spectrum intensity and the melamine concentration had been established. In addition, the measure of melamine residual in pure milk was carried out successfully, and the results indicated that the prepared 3D nanomace substrates had great potential in food inspection, environment protection, and a few other technologically important fields. PMID:25731067

  18. Subeutectic growth of single-crystal silicon nanowires grown on and wrapped with graphene nanosheets: high-performance anode material for lithium-ion battery.

    PubMed

    Hassan, Fathy M; Elsayed, Abdel Rahman; Chabot, Victor; Batmaz, Rasim; Xiao, Xingcheng; Chen, Zhongwei

    2014-08-27

    A novel one-pot synthesis for the subeutectic growth of (111) oriented Si nanowires on an in situ formed nickel nanoparticle catalyst prepared from an inexpensive nickel nitrate precursor is developed. Additionally, anchoring the nickel nanoparticles to a simultaneously reduced graphene oxide support created synergy between the individual components of the c-SiNW-G composite, which greatly improved the reversible charge capacity and it is retention at high current density when applied as an anode for a Li-ion battery. The c-SiNW-G electrodes for Li-ion battery achieved excellent high-rate performance, producing a stable reversible capacity of 550 mAh g(-1) after 100 cycles at 6.8 A g(-1) (78% of that at 0.1 A g(-1)). Thus, with further development this process creates an important building block for a new wave of low-cost silicon nanowire materials and a promising avenue for high rate Li-ion batteries. PMID:25077883

  19. Binding of carbon coated nano-silicon in graphene sheets by wet ball-milling and pyrolysis as high performance anodes for lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Sun, Wei; Hu, Renzong; Zhang, Miao; Liu, Jiangwen; Zhu, Min

    2016-06-01

    A novel approach has been developed to prepare silicon@carbon/graphene sheets (Si@C/G) composite with a unique structure, in which carbon coated Si nanoparticles are uniformly dispersed in a matrix of graphene sheets, to enhance the cycleability and electronic conductivity of Si-based anodes for Li-ion batteries. In this study, Si nanoparticles and expanded graphite (EG) are treated by combining high-energy wet ball-milling in sucrose solution with subsequent pyrolysis treatment to produce this Si@C/G composite. To achieve better overall electrochemical performance, the carbon content of the composites is also studied systematically. The as-designed Si30@C40/G30 (Si:C:G = 30:40:30, by weight) composite exhibits a high Li-storage capacity of 1259 mAh g-1 at a current density of 0.2 A g-1 in the first cycle. Further, a stable cycleability with 99.1/88.2% capacity retention from initial reversible charge capacity can be achieved over 100/300 cycles, showing great promise for batteries applications. This good electrochemical performance can be attributed to the uniform coating and binding effect of pyrolytic carbon as well as the network of graphene sheets, which increase the electronic conductivity and Li+ diffusion in the composite, and effectively accommodated the volume change of Si nanoparticles during the Li+ alloying and dealloying processes.

  20. Silicon Diphosphide: A Si-Based Three-Dimensional Crystalline Framework as a High-Performance Li-Ion Battery Anode.

    PubMed

    Kwon, Hyuk-Tae; Lee, Churl Kyoung; Jeon, Ki-Joon; Park, Cheol-Min

    2016-06-28

    The development of an electrode material for rechargeable Li-ion batteries (LIBs) and the understanding of its reaction mechanism play key roles in enhancing the electrochemical characteristics of LIBs for use in various portable electronics and electric vehicles. Here, we report a three-dimensional (3D) crystalline-framework-structured silicon diphosphide (SiP2) and its interesting electrochemical behaviors for superior LIBs. During Li insertion in the SiP2, a three-step electrochemical reaction mechanism, sequentially comprised of a topotactic transition (0.55-2 V), an amorphization (0.25-2 V), and a conversion (0-2 V), was thoroughly analyzed. On the basis of the three-step electrochemical reaction mechanism, excellent electrochemical properties, such as high initial capacities, high initial Coulombic efficiencies, stable cycle behaviors, and fast-rate capabilities, were attained from the preparation of a nanostructured SiP2/C composite. This 3D crystalline-framework-structured SiP2 compound will be a promising alternative anode material in the realization and mass production of excellent, rechargeable LIBs. PMID:27243799

  1. Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glass

    NASA Astrophysics Data System (ADS)

    Akazawa, Muneki; Sakaike, Kohei; Higashi, Seiichiro

    2015-08-01

    We attempted to transfer a phosphorus ion (P+)-implanted oxidized silicon-on-insulator (SOI) layer with a midair cavity to a glass substrate using meniscus force at a low temperature. The SiO2 column size was controlled by etching time and the minimum column size was 104 nm. The transfer yield of the implanted sample was significantly improved by decreasing the column size, and the maximum transfer yield was 95% when the implantation dose was 1 × 1015 cm-2. The causes of increasing transfer yield are considered to be the tapered SiO2 column shape and the hydrophilicity of the surface of oxidized samples with implantation. N-channel thin-film transistors (TFTs) fabricated using the films on glass at 300 °C showed a field-effect mobility of 505 cm2 V-1 s-1, a threshold voltage of 2.47 V and a subthreshold swing of 324 mV/dec. on average.

  2. Lithium silicon tin oxynitride (Li ySiTON): high-performance anode in thin-film lithium-ion batteries for microelectronics

    NASA Astrophysics Data System (ADS)

    Neudecker, B. J.; Zuhr, R. A.; Bates, J. B.

    A lithium-ion thin-film battery, consisting of the amorphous silicon tin oxynitride anode (`SiTON'), the amorphous lithium phosphorus oxynitride electrolyte (`Lipon'), and a crystalline LiCoO 2 cathode, can be heated at 250°C in air for 1 h which exceeds by far the required solder reflow conditions for electronic circuit assembly. Moreover, the performance of such a battery was found to even improve after the heat treatment. The Li ySiTON profile between 0 and 1.2 V vs. Li was determined in SiTON/Lipon/LiCoO 2 lithium-ion thin-film cells equipped with a Li metal reference electrode. By comparison with a Sn 3N 4/Lipon/LiCoO 2 three-electrode lithium-ion thin-film cell, a model for the electrochemical insertion/extraction process of Li ySiTON was suggested. The SiTON/Lipon/LiCoO 2 cells sustained 5 mA/cm 2 between 4.2 and 2.7 V while the anode supplied a reversible discharge capacity of about 340 μA h/mg or even 450 μA h/mg after heating at 250°C in air for 1 h. A long-term cycling stability test of a SiTON/Lipon/LiCoO 2 battery between 3.93 and 2.7 V demonstrated that the Li ySiTON capacity faded only by 0.001% per cycle when charging was stopped as soon as the Li ySiTON potential reached 0 V vs. Li. When this cathode-heavy cell was charged to 4.1 V (Li ySiTON at 0 V vs. Li), a significantly higher reversible discharge capacity was obtained over ˜5000 cycles.

  3. Identifying Critical Pathways to High-Performance PV: Preprint

    SciTech Connect

    Symko-Davies, M.; Noufi, R.; Kurtz, S.

    2002-05-01

    This conference paper describes the High-Performance Photovoltaic (HiPerf PV)Project was initiated by the U.S. Department of Energy to substantially increase the viability of photovoltaics (PV) for cost-competitive applications so that PV can contribute significantly to our energy supply and our environment in the 21st century. To accomplish this, the NCPV directs in-house and subcontracted research in high-performance polycrystalline thin-film and multijunction concentrator devices. Details of the subcontractor and in-house progress will be described toward identifying critical pathways of 25% polycrystalline thin-film tandem cells and developing multijunction concentrator modules to 33%.

  4. High Performance Arcjet Engines

    NASA Technical Reports Server (NTRS)

    Kennel, Elliot B.; Ivanov, Alexey Nikolayevich; Nikolayev, Yuri Vyacheslavovich

    1994-01-01

    This effort sought to exploit advanced single crystal tungsten-tantalum alloy material for fabrication of a high strength, high temperature arcjet anode. The use of this material is expected to result in improved strength, temperature resistance, and lifetime compared to state of the art polycrystalline alloys. In addition, the use of high electrical and thermal conductivity carbon-carbon composites was considered, and is believed to be a feasible approach. Highly conductive carbon-carbon composite anode capability represents enabling technology for rotating-arc designs derived from the Russian Scientific Research Institute of Thermal Processes (NIITP) because of high heat fluxes at the anode surface. However, for US designs the anode heat flux is much smaller, and thus the benefits are not as great as in the case of NIITP-derived designs. Still, it does appear that the tensile properties of carbon-carbon can be even better than those of single crystal tungsten alloys, especially when nearly-single-crystal fibers such as vapor grown carbon fiber (VGCF) are used. Composites fabricated from such materials must be coated with a refractory carbide coating in order to ensure compatibility with high temperature hydrogen. Fabrication of tungsten alloy single crystals in the sizes required for fabrication of an arcjet anode has been shown to be feasible. Test data indicate that the material can be expected to be at least the equal of W-Re-HfC polycrystalline alloy in terms of its tensile properties, and possibly superior. We are also informed by our colleagues at Scientific Production Association Luch (NP0 Luch) that it is possible to use Russian technology to fabricate polycrystalline W-Re-HfC or other high strength alloys if desired. This is important because existing engines must rely on previously accumulated stocks of these materials, and a fabrication capability for future requirements is not assured.

  5. High performance polymer development

    NASA Technical Reports Server (NTRS)

    Hergenrother, Paul M.

    1991-01-01

    The term high performance as applied to polymers is generally associated with polymers that operate at high temperatures. High performance is used to describe polymers that perform at temperatures of 177 C or higher. In addition to temperature, other factors obviously influence the performance of polymers such as thermal cycling, stress level, and environmental effects. Some recent developments at NASA Langley in polyimides, poly(arylene ethers), and acetylenic terminated materials are discussed. The high performance/high temperature polymers discussed are representative of the type of work underway at NASA Langley Research Center. Further improvement in these materials as well as the development of new polymers will provide technology to help meet NASA future needs in high performance/high temperature applications. In addition, because of the combination of properties offered by many of these polymers, they should find use in many other applications.

  6. High-performance silicon nanohole solar cells.

    PubMed

    Peng, Kui-Qing; Wang, Xin; Li, Li; Wu, Xiao-Ling; Lee, Shuit-Tong

    2010-05-26

    We demonstrate Si nanohole arrays as a superior sunlight-absorbing nanostructure for photovoltaic solar cell applications. Under 1 sun AM1.5G illumination, a Si nanohole solar cell with p-n junctions via P diffusion exhibited a open-circuit voltage of 566.6 mV, a short-circuit current density of 32.2 mA/cm(2), and a remarkable power conversion efficiency of 9.51%, which is higher than that of its counterparts based on Si nanowires, planar Si, and pyramid-textured Si. The nanohole array geometry presents a novel and viable method fo cost-efficient solar energy conversion. PMID:20426468

  7. High-performance surface-micromachined inchworm actuator.

    SciTech Connect

    Walraven, Jeremy Allen; Redmond, James Michael; Luck, David L.; Ashurst, William Robert; de Boer, Maarten Pieter; Maboudian, Roya; Corwin, Alex David

    2003-07-01

    This work demonstrates a polycrystalline silicon surface-micromachined inchworm actuator that exhibits high-performance characteristics such as large force ({+-}0.5 millinewtons), large velocity range (0 to {+-}4.4 mm/sec), large displacement range ({+-}100 microns), small step size ({+-}10, {+-}40 or {+-}100 nanometers), low power consumption (nanojoules per cycle), continuous bidirectional operation and relatively small area (600 x 200{micro}m{sup 2}). An in situ load spring calibrated on a logarithmic scale from micronewtons to millinewtons, optical microscopy and Michelson interferometry are used to characterize its performance. The actuator consists of a force-amplifying plate that spans two voltage-controlled clamps, and walking is achieved by appropriately sequencing signals to these three components. In the clamps, normal force is borne by equipotential rubbing counterfaces, enabling friction to be measured against load. Using different monolayer coatings, we show that the static coefficient of friction can be changed from 0.14 to 1.04, and that it is load-independent over a broad range. We further find that the static coefficient of friction does not accurately predict the force generated by the actuator and attribute this to nanometer-scale presliding tangential deflections.

  8. High performance parallel architectures

    SciTech Connect

    Anderson, R.E. )

    1989-09-01

    In this paper the author describes current high performance parallel computer architectures. A taxonomy is presented to show computer architecture from the user programmer's point-of-view. The effects of the taxonomy upon the programming model are described. Some current architectures are described with respect to the taxonomy. Finally, some predictions about future systems are presented. 5 refs., 1 fig.

  9. High-Performance Happy

    ERIC Educational Resources Information Center

    O'Hanlon, Charlene

    2007-01-01

    Traditionally, the high-performance computing (HPC) systems used to conduct research at universities have amounted to silos of technology scattered across the campus and falling under the purview of the researchers themselves. This article reports that a growing number of universities are now taking over the management of those systems and…

  10. High performance systems

    SciTech Connect

    Vigil, M.B.

    1995-03-01

    This document provides a written compilation of the presentations and viewgraphs from the 1994 Conference on High Speed Computing given at the High Speed Computing Conference, {open_quotes}High Performance Systems,{close_quotes} held at Gleneden Beach, Oregon, on April 18 through 21, 1994.

  11. High Performance, Dependable Multiprocessor

    NASA Technical Reports Server (NTRS)

    Ramos, Jeremy; Samson, John R.; Troxel, Ian; Subramaniyan, Rajagopal; Jacobs, Adam; Greco, James; Cieslewski, Grzegorz; Curreri, John; Fischer, Michael; Grobelny, Eric; George, Alan; Aggarwal, Vikas; Patel, Minesh; Some, Raphael

    2006-01-01

    With the ever increasing demand for higher bandwidth and processing capacity of today's space exploration, space science, and defense missions, the ability to efficiently apply commercial-off-the-shelf (COTS) processors for on-board computing is now a critical need. In response to this need, NASA's New Millennium Program office has commissioned the development of Dependable Multiprocessor (DM) technology for use in payload and robotic missions. The Dependable Multiprocessor technology is a COTS-based, power efficient, high performance, highly dependable, fault tolerant cluster computer. To date, Honeywell has successfully demonstrated a TRL4 prototype of the Dependable Multiprocessor [I], and is now working on the development of a TRLS prototype. For the present effort Honeywell has teamed up with the University of Florida's High-performance Computing and Simulation (HCS) Lab, and together the team has demonstrated major elements of the Dependable Multiprocessor TRLS system.

  12. High performance polymeric foams

    SciTech Connect

    Gargiulo, M.; Sorrentino, L.; Iannace, S.

    2008-08-28

    The aim of this work was to investigate the foamability of high-performance polymers (polyethersulfone, polyphenylsulfone, polyetherimide and polyethylenenaphtalate). Two different methods have been used to prepare the foam samples: high temperature expansion and two-stage batch process. The effects of processing parameters (saturation time and pressure, foaming temperature) on the densities and microcellular structures of these foams were analyzed by using scanning electron microscopy.

  13. Effect of Heat Treatment in Air on Thermoelectric Properties of Polycrystalline Type-I Silicon-Based Clathrate: Ba8Al15Si31

    NASA Astrophysics Data System (ADS)

    Anno, Hiroaki; Shirataki, Ritsuko

    2015-06-01

    The effect of heat treatment in air on the thermoelectric properties was investigated for polycrystalline Ba8Al15Si31, where the Al content is almost at the maximum in the Ba8Al x Si46- x system, to evaluate the thermal stability in air at high temperatures, which is indispensable for practical use in thermoelectric applications. Samples were prepared by combining arc melting and spark plasma sintering techniques. Heat treatments were performed in air at 873 K for 10 days and 20 days. The Seebeck coefficient, electrical conductivity, and thermal conductivity were measured before and after the heat treatments. The microstructure and chemical composition were also analyzed before and after the heat treatments, using scanning electron microscopy with energy-dispersive x-ray spectroscopy. Although an oxidation layer was formed on the surface by the heat treatment in air, the chemical composition of the interior of Ba8Al15Si31 was found to be stable in air at 873 K for 10 days and 20 days. The Seebeck coefficient, the electrical conductivity, and the thermal conductivity were found to be almost unchanged after the heat treatment, indicating that Ba8Al15Si31 clathrate is promising as a thermoelectric material with high thermal stability for use in air at 873 K.

  14. High performance steam development

    SciTech Connect

    Duffy, T.; Schneider, P.

    1995-12-31

    DOE has launched a program to make a step change in power plant to 1500 F steam, since the highest possible performance gains can be achieved in a 1500 F steam system when using a topping turbine in a back pressure steam turbine for cogeneration. A 500-hour proof-of-concept steam generator test module was designed, fabricated, and successfully tested. It has four once-through steam generator circuits. The complete HPSS (high performance steam system) was tested above 1500 F and 1500 psig for over 102 hours at full power.

  15. High Performance FORTRAN

    NASA Technical Reports Server (NTRS)

    Mehrotra, Piyush

    1994-01-01

    High performance FORTRAN is a set of extensions for FORTRAN 90 designed to allow specification of data parallel algorithms. The programmer annotates the program with distribution directives to specify the desired layout of data. The underlying programming model provides a global name space and a single thread of control. Explicitly parallel constructs allow the expression of fairly controlled forms of parallelism in particular data parallelism. Thus the code is specified in a high level portable manner with no explicit tasking or communication statements. The goal is to allow architecture specific compilers to generate efficient code for a wide variety of architectures including SIMD, MIMD shared and distributed memory machines.

  16. High Performance Liquid Chromatography

    NASA Astrophysics Data System (ADS)

    Talcott, Stephen

    High performance liquid chromatography (HPLC) has many applications in food chemistry. Food components that have been analyzed with HPLC include organic acids, vitamins, amino acids, sugars, nitrosamines, certain pesticides, metabolites, fatty acids, aflatoxins, pigments, and certain food additives. Unlike gas chromatography, it is not necessary for the compound being analyzed to be volatile. It is necessary, however, for the compounds to have some solubility in the mobile phase. It is important that the solubilized samples for injection be free from all particulate matter, so centrifugation and filtration are common procedures. Also, solid-phase extraction is used commonly in sample preparation to remove interfering compounds from the sample matrix prior to HPLC analysis.

  17. Optical Sensing Circuit Using Low-Temperature Polycrystalline Silicon p-Type Thin-Film Transistors and p-Intrinsic-Metal Diode for Active Matrix Displays with Optical Input Functions

    NASA Astrophysics Data System (ADS)

    Lim, Han-Sin; Kwon, Oh-Kyong

    2009-03-01

    An optical sensing circuit composed of low-temperature polycrystalline silicon (LTPS) p-type thin-film transistors (TFTs) and a p-intrinsic-metal (p-i-m) diode is proposed for image scanning and touch sensing functions. Because it is a very difficult challenge to integrate both display pixels and optical sensing circuits into the restricted pixel area, the number of additional devices and control signal lines must be minimized. Therefore, two p-type TFTs, one p-i-m diode, one capacitor, and one signal line are added to display pixel for the proposed optical sensing circuit. Active matrix liquid crystal display (AMLCD) and active matrix organic light-emitting diode (AMOLED) pixels with the proposed optical sensing circuit have image scanning and touch sensing functions, respectively. Through the measurement of the proposed circuit under the condition of incident light varying from 0 to 10,000 lx, we verified that the dynamic and output ranges of the proposed circuit are 30 dB and 1.5 V, respectively.

  18. Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2 stacks

    NASA Astrophysics Data System (ADS)

    Iwase, Taku; Matsui, Miyako; Yokogawa, Kenetsu; Arase, Takao; Mori, Masahito

    2016-06-01

    The etching of polycrystalline silicon (poly-Si)/SiO2 stacks by using VHF plasma was studied for three-dimensional NAND fabrication. One critical goal is achieving both a vertical profile and high throughput for multiple-stack etching. While the conventional process consists of multiple steps for each stacked layer, in this study, HBr/fluorocarbon-based gas chemistry was investigated to achieve a single-step etching process to reduce process time. By analyzing the dependence on wafer temperature, we improved both the etching profile and rate at a low temperature. The etching mechanism is examined considering the composition of the surface reaction layer. X-ray photoelectron spectroscopy (XPS) analysis revealed that the adsorption of N–H and Br was enhanced at a low temperature, resulting in a reduced carbon-based-polymer thickness and enhanced Si etching. Finally, a vertical profile was obtained as a result of the formation of a thin and reactive surface-reaction layer at a low wafer temperature.

  19. High Performance Buildings Database

    DOE Data Explorer

    The High Performance Buildings Database is a shared resource for the building industry, a unique central repository of in-depth information and data on high-performance, green building projects across the United States and abroad. The database includes information on the energy use, environmental performance, design process, finances, and other aspects of each project. Members of the design and construction teams are listed, as are sources for additional information. In total, up to twelve screens of detailed information are provided for each project profile. Projects range in size from small single-family homes or tenant fit-outs within buildings to large commercial and institutional buildings and even entire campuses. The database is a data repository as well. A series of Web-based data-entry templates allows anyone to enter information about a building project into the database. Once a project has been submitted, each of the partner organizations can review the entry and choose whether or not to publish that particular project on its own Web site.

  20. High Performance Window Retrofit

    SciTech Connect

    Shrestha, Som S; Hun, Diana E; Desjarlais, Andre Omer

    2013-12-01

    The US Department of Energy (DOE) Office of Energy Efficiency and Renewable Energy (EERE) and Traco partnered to develop high-performance windows for commercial building that are cost-effective. The main performance requirement for these windows was that they needed to have an R-value of at least 5 ft2 F h/Btu. This project seeks to quantify the potential energy savings from installing these windows in commercial buildings that are at least 20 years old. To this end, we are conducting evaluations at a two-story test facility that is representative of a commercial building from the 1980s, and are gathering measurements on the performance of its windows before and after double-pane, clear-glazed units are upgraded with R5 windows. Additionally, we will use these data to calibrate EnergyPlus models that we will allow us to extrapolate results to other climates. Findings from this project will provide empirical data on the benefits from high-performance windows, which will help promote their adoption in new and existing commercial buildings. This report describes the experimental setup, and includes some of the field and simulation results.

  1. Method of forming buried oxide layers in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  2. High performance microsystem packaging: A perspective

    SciTech Connect

    Romig, A.D. Jr.; Dressendorfer, P.V.; Palmer, D.W.

    1997-10-01

    The second silicon revolution will be based on intelligent, integrated microsystems where multiple technologies (such as analog, digital, memory, sensor, micro-electro-mechanical, and communication devices) are integrated onto a single chip or within a multichip module. A necessary element for such systems is cost-effective, high-performance packaging. This paper examines many of the issues associated with the packaging of integrated microsystems, with an emphasis on the areas of packaging design, manufacturability, and reliability.

  3. Status of polycrystalline solar cell technologies

    NASA Astrophysics Data System (ADS)

    Kapur, Vijay K.; Basol, Bulent M.

    Thin-film cadmium telluride (CdTe) and thin-film copper indium diselenide (CIS) solar cells are discussed. The issues these technologies face before commercialization are addressed. High-efficiency (15-18 percent) polycrystalline silicon modules could dominate the market in the near future, and impressive results for thin-film CdTe and CIS solar cells and their outdoor stability can attract increased interest in these solar cells, which will accelerate their development.

  4. Diffusion in polycrystalline microstructures

    SciTech Connect

    Swiler, T.P.; Holm, E.A.

    1995-07-01

    Mass transport properties are important in polycrystalline materials used as protective films. Traditionally, such properties have been studied by examining model polycrystalline structures, such as a regular array of straight grain boundaries. However, these models do not account for a number of features of real grain ensembles, including the grain size distribution and the topological aspects of grain boundaries. In this study, a finite difference scheme is developed to study transient and steady-state mass transport through realistic two-dimensional polycrystalline microstructures. Effects of microstructural parameters such as average grain size and grain boundary topology are examined, as are effects due to limits of the model.

  5. High performance sapphire windows

    NASA Technical Reports Server (NTRS)

    Bates, Stephen C.; Liou, Larry

    1993-01-01

    High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

  6. High Performance Network Monitoring

    SciTech Connect

    Martinez, Jesse E

    2012-08-10

    Network Monitoring requires a substantial use of data and error analysis to overcome issues with clusters. Zenoss and Splunk help to monitor system log messages that are reporting issues about the clusters to monitoring services. Infiniband infrastructure on a number of clusters upgraded to ibmon2. ibmon2 requires different filters to report errors to system administrators. Focus for this summer is to: (1) Implement ibmon2 filters on monitoring boxes to report system errors to system administrators using Zenoss and Splunk; (2) Modify and improve scripts for monitoring and administrative usage; (3) Learn more about networks including services and maintenance for high performance computing systems; and (4) Gain a life experience working with professionals under real world situations. Filters were created to account for clusters running ibmon2 v1.0.0-1 10 Filters currently implemented for ibmon2 using Python. Filters look for threshold of port counters. Over certain counts, filters report errors to on-call system administrators and modifies grid to show local host with issue.

  7. Large scale pattern graphene electrode for high performance in transparent organic single crystal field-effect transistors.

    PubMed

    Liu, Wei; Jackson, Biyun Li; Zhu, Jing; Miao, Cong-Qin; Chung, Choong-Heui; Chung, Choon-Heui; Park, Young-Ju; Sun, Ke; Woo, Jason; Xie, Ya-Hong

    2010-07-27

    High quality, large grain size graphene on polycrystalline nickel film on two inch silicon wafers was successfully synthesized by the chemical vapor deposition (CVD) method. The polydimethylsiloxane (PDMS) stamping method was used for graphene transferring in this experiment. The graphene transferred onto Al2O3/ITO substrates was patterned into macroscopic dimension electrodes using conventional lithography followed by oxygen plasma etching. Experimental results show that this graphene can serve as transparent source and drain electrodes in high performance organic semiconductor nanoribbon organic field-effect transistors (OFETs), facilitating high hole injection efficiency due to the preferred work function match with the channel material: single crystalline copper phthalocyanine (CuPc) nanoribbons. The nanoribbons were grown on top of the patterned graphene via evaporate-deposition to form the FET device. The carrier mobility and on/off current ratio of such devices were measured to be as high as 0.36 cm2/(V s) and 10(4). PMID:20536162

  8. Commoditization of High Performance Storage

    SciTech Connect

    Studham, Scott S.

    2004-04-01

    The commoditization of high performance computers started in the late 80s with the attack of the killer micros. Previously, high performance computers were exotic vector systems that could only be afforded by an illustrious few. Now everyone has a supercomputer composed of clusters of commodity processors. A similar commoditization of high performance storage has begun. Commodity disks are being used for high performance storage, enabling a paradigm change in storage and significantly changing the price point of high volume storage.

  9. Thin silicon solar cells

    SciTech Connect

    Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  10. DOE High Performance Concentrator PV Project

    SciTech Connect

    McConnell, R.; Symko-Davies, M.

    2005-08-01

    Much in demand are next-generation photovoltaic (PV) technologies that can be used economically to make a large-scale impact on world electricity production. The U.S. Department of Energy (DOE) initiated the High-Performance Photovoltaic (HiPerf PV) Project to substantially increase the viability of PV for cost-competitive applications so that PV can contribute significantly to both our energy supply and environment. To accomplish such results, the National Center for Photovoltaics (NCPV) directs in-house and subcontracted research in high-performance polycrystalline thin-film and multijunction concentrator devices with the goal of enabling progress of high-efficiency technologies toward commercial-prototype products. We will describe the details of the subcontractor and in-house progress in exploring and accelerating pathways of III-V multijunction concentrator solar cells and systems toward their long-term goals. By 2020, we anticipate that this project will have demonstrated 33% system efficiency and a system price of $1.00/Wp for concentrator PV systems using III-V multijunction solar cells with efficiencies over 41%.

  11. A high performance thin film thermoelectric cooler

    SciTech Connect

    Rowe, D.M.; Min, G.; Volklein, F.

    1998-07-01

    Thin film thermoelectric devices with small dimensions have been fabricated using microelectronics technology and operated successfully in the Seebeck mode as sensors or generators. However, they do not operate successfully in the Peltier mode as coolers, because of the thermal bypass provided by the relatively thick substrate upon which the thermoelectric device is fabricated. In this paper a processing sequence is described which dramatically reduces this thermal bypass and facilitates the fabrication of high performance integrated thin film thermoelectric coolers. In the processing sequence a very thin amorphous SiC (or SiO{sub 2}SiN{sub 4}) film is deposited on a silicon substrate using conventional thin film deposition and a membrane formed by removing the silicon substrate over a desired region using chemical etching or micro-machining. Thermoelements are deposited on the membrane using conventional thin film deposition and patterning techniques and configured so that the region which is to be cooled is abutted to the cold junctions of the Peltier thermoelements while the hot junctions are located at the outer peripheral area which rests on the silicon substrate rim. Heat is pumped laterally from the cooled region to the silicon substrate rim and then dissipated vertically through it to an external heat sink. Theoretical calculations of the performance of a cooler described above indicate that a maximum temperature difference of about 40--50K can be achieved with a maximum heat pumping capacity of around 10 milliwatts.

  12. High performance anode for advanced Li batteries

    SciTech Connect

    Lake, Carla

    2015-11-02

    The overall objective of this Phase I SBIR effort was to advance the manufacturing technology for ASI’s Si-CNF high-performance anode by creating a framework for large volume production and utilization of low-cost Si-coated carbon nanofibers (Si-CNF) for the battery industry. This project explores the use of nano-structured silicon which is deposited on a nano-scale carbon filament to achieve the benefits of high cycle life and high charge capacity without the consequent fading of, or failure in the capacity resulting from stress-induced fracturing of the Si particles and de-coupling from the electrode. ASI’s patented coating process distinguishes itself from others, in that it is highly reproducible, readily scalable and results in a Si-CNF composite structure containing 25-30% silicon, with a compositionally graded interface at the Si-CNF interface that significantly improve cycling stability and enhances adhesion of silicon to the carbon fiber support. In Phase I, the team demonstrated the production of the Si-CNF anode material can successfully be transitioned from a static bench-scale reactor into a fluidized bed reactor. In addition, ASI made significant progress in the development of low cost, quick testing methods which can be performed on silicon coated CNFs as a means of quality control. To date, weight change, density, and cycling performance were the key metrics used to validate the high performance anode material. Under this effort, ASI made strides to establish a quality control protocol for the large volume production of Si-CNFs and has identified several key technical thrusts for future work. Using the results of this Phase I effort as a foundation, ASI has defined a path forward to commercialize and deliver high volume and low-cost production of SI-CNF material for anodes in Li-ion batteries.

  13. High Performance Fortran: An overview

    SciTech Connect

    Zosel, M.E.

    1992-12-23

    The purpose of this paper is to give an overview of the work of the High Performance Fortran Forum (HPFF). This group of industry, academic, and user representatives has been meeting to define a set of extensions for Fortran dedicated to the special problems posed by a very high performance computers, especially the new generation of parallel computers. The paper describes the HPFF effort and its goals and gives a brief description of the functionality of High Performance Fortran (HPF).

  14. Silicon materials outlook study for 1980-1985 calendar years

    NASA Technical Reports Server (NTRS)

    Costogue, E.; Ferber, R.; Hasbach, W.; Pellin, R.; Yaws, C.

    1979-01-01

    The polycrystalline silicon industry was studied in relation to future market needs. Analysis of the data obtained indicates that there is a high probability of polycrystalline silicon shortage by the end of 1982 and a strong seller's market after 1981 which will foster price competition for available silicon.

  15. Development of New Low-Cost, High-Performance, PV Module Encapsulant/Packaging Materials: Annual Technical Progress Report, Phase 1, 22 October 2002-30 September 2003

    SciTech Connect

    Agro, S. C.; Tucker, R. T.

    2004-03-01

    The primary objectives of this subcontract are for Specialized Technology Resources, Inc., to work with U.S.-based PV module manufacturers representing crystalline silicon, polycrystalline silicon, amorphous silicon, copper indium diselenide (CIS), and other state-of-the-art thin-film technologies to develop formulations, production processes, prototype and qualify new low-cost, high-performance photovoltaic module encapsulants/packaging materials. The manufacturers will assist in identifying each materials' deficiencies while undergoing development, and then ultimately in qualifying the final optimized materials designed to specifically meet their requirements. Upon completion of this program, new low-cost, high-performance, PV module encapsulant/packaging materials will be qualified, by one or more end-users, for their specific application. Information gathering on topics related to thin-film module technology, including device performance/failure analysis, glass stability, and de vice encapsulation, has been completed. This information has provided concepts and considerations for module failure analysis, accelerated testing design, and encapsulation formulation strategy for thin-film modules.

  16. Thin film polycrystalline silicon solar cells

    SciTech Connect

    Ghosh, A. K.; Feng, T.; Eustace, D. J.; Maruska, H. P.

    1980-01-01

    During the present quarter efficiency of heterostructure solar cells has been increased from 13 to 13.7% for single crystal and from 10.3 to 11.2% for polysilicon. For polysilicon the improvements can be attributed to reductions in grid-area coverage and in reflection losses and for single crystal to a combination of reduction in grid-area coverage and increase in fill factor. The heterostructure cells in both cases were IT0/n-Si solar cells. Degradation in Sn0/sub 2//n-Si solar cells can be greatly reduced to negligible proportions by proper encapsulation. The cells used in stability tests have an average initial efficiency of 11% which reduces to a value of about 10.5% after 6 months of exposure to sunlight and ambient conditions. This small degradation occurs within the first month, and the efficiency remains constant subsequently. The reduction in efficiency is due to a decrease in the open-circuit voltage only, while the short-circuit current and fill factor remain constant. The effects of grain-size on the Hall measurements in polysilicon have been analyzed and interpreted, with some modifications, using a model proposed by Bube. This modified model predicts that the measured effective Hall voltage is composed of components originating from the bulk and space-charge region. For materials with large grains, the carrier concentration is independent of the inter-grain boundary barrier, whereas the mobility is dependent on it. However, for small rains, both the carrier density and mobility depend on the barrier. These predictions are consistant with experimental results of mm-size Wacker polysilicon and ..mu..m-size NTD polysilicon.

  17. Thermal conductivity measurements of Summit polycrystalline silicon.

    SciTech Connect

    Clemens, Rebecca; Kuppers, Jaron D.; Phinney, Leslie Mary

    2006-11-01

    A capability for measuring the thermal conductivity of microelectromechanical systems (MEMS) materials using a steady state resistance technique was developed and used to measure the thermal conductivities of SUMMiT{trademark} V layers. Thermal conductivities were measured over two temperature ranges: 100K to 350K and 293K to 575K in order to generate two data sets. The steady state resistance technique uses surface micromachined bridge structures fabricated using the standard SUMMiT fabrication process. Electrical resistance and resistivity data are reported for poly1-poly2 laminate, poly2, poly3, and poly4 polysilicon structural layers in the SUMMiT process from 83K to 575K. Thermal conductivity measurements for these polysilicon layers demonstrate for the first time that the thermal conductivity is a function of the particular SUMMiT layer. Also, the poly2 layer has a different variation in thermal conductivity as the temperature is decreased than the poly1-poly2 laminate, poly3, and poly4 layers. As the temperature increases above room temperature, the difference in thermal conductivity between the layers decreases.

  18. High Performance Thin Layer Chromatography.

    ERIC Educational Resources Information Center

    Costanzo, Samuel J.

    1984-01-01

    Clarifies where in the scheme of modern chromatography high performance thin layer chromatography (TLC) fits and why in some situations it is a viable alternative to gas and high performance liquid chromatography. New TLC plates, sample applications, plate development, and instrumental techniques are considered. (JN)

  19. Polycrystalline photovoltaic cell

    SciTech Connect

    Jordan, J.F.; Lampkin, C.M.

    1983-10-25

    A photovoltaic cell is disclosed, having an electrically conductive substrate, which may be glass having a film of conductive tin oxide; a first layer containing a suitable semiconductor, which layer has a first component film with an amorphous structure and a second component film with a polycrystalline structure; a second layer forming a heterojunction with the first layer; and suitable electrodes where the heterojunction is formed from a solution containing copper, the amorphous film component is superposed above an electrically conductive substrate to resist permeation of the copper-containing material to shorting electrical contact with the substrate. The penetration resistant amorphous layer permits a variety of processes to be used in forming the heterojunction with even very thin layers (1-6 /SUB u/ thick) of underlying polycrystalline semiconductor materials. In some embodiments, the amorphous-like structure may be formed by the addition of aluminum or zirconium compounds to a solution of cadmium salts sprayed over a heated substrate.

  20. Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

    DOEpatents

    Toet, Daniel; Sigmon, Thomas W.

    2005-08-23

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  1. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOEpatents

    Toet, Daniel; Sigmon, Thomas W.

    2004-12-07

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  2. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOEpatents

    Toet, Daniel; Sigmon, Thomas W.

    2003-01-01

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  3. Polycrystalline thin film photovoltaics

    NASA Astrophysics Data System (ADS)

    Zweibel, K.; Ullal, H. S.; Mitchell, R. L.

    Significant progress has recently been made towards improving the efficiencies of polycrystalline thin-film solar cells and modules using CuInSe2 and CdTe. The history of using CuInSe2 and CdTe for solar cells is reviewed. Initial outdoor stability tests of modules are encouraging. Progress in semiconductor deposition techniques has also been substantial. Both CuInSe2 and CdTe are positioned for commercialization during the 1990s. The major participants in developing these materials are described. The US DOE/SERI (Solar Energy Research Institute) program recognizes the rapid progress and important potential of polycrystalline thin films to meet ambitious cost and performance goals. US DOE/SERI is in the process of funding an initiative in this area with the goal of ensuring US leadership in the development of these technologies. The polycrystalline thin-film module development initiative, the modeling and stability of the devices, and health and safety issues are discussed.

  4. Designing 3D Multihierarchical Heteronanostructures for High-Performance On-Chip Hybrid Supercapacitors: Poly(3,4-(ethylenedioxy)thiophene)-Coated Diamond/Silicon Nanowire Electrodes in an Aprotic Ionic Liquid.

    PubMed

    Aradilla, David; Gao, Fang; Lewes-Malandrakis, Georgia; Müller-Sebert, Wolfgang; Gentile, Pascal; Boniface, Maxime; Aldakov, Dmitry; Iliev, Boyan; Schubert, Thomas J S; Nebel, Christoph E; Bidan, Gérard

    2016-07-20

    A versatile and robust hierarchically multifunctionalized nanostructured material made of poly(3,4-(ethylenedioxy)thiophene) (PEDOT)-coated diamond@silicon nanowires has been demonstrated to be an excellent capacitive electrode for supercapacitor devices. Thus, the electrochemical deposition of nanometric PEDOT films on diamond-coated silicon nanowire (SiNW) electrodes using N-methyl-N-propylpyrrolidinium bis((trifluoromethyl)sulfonyl)imide ionic liquid displayed a specific capacitance value of 140 F g(-1) at a scan rate of 1 mV s(-1). The as-grown functionalized electrodes were evaluated in a symmetric planar microsupercapacitor using butyltrimethylammonium bis((trifluoromethyl)sulfonyl)imide aprotic ionic liquid as the electrolyte. The device exhibited extraordinary energy and power density values of 26 mJ cm(-2) and 1.3 mW cm(-2) within a large voltage cell of 2.5 V, respectively. In addition, the system was able to retain 80% of its initial capacitance after 15 000 galvanostatic charge-discharge cycles at a high current density of 1 mA cm(-2) while maintaining a Coulombic efficiency around 100%. Therefore, this multifunctionalized hybrid device represents one of the best electrochemical performances concerning coated SiNW electrodes for a high-energy advanced on-chip supercapacitor. PMID:27348192

  5. Tough high performance composite matrix

    NASA Technical Reports Server (NTRS)

    Pater, Ruth H. (Inventor); Johnston, Norman J. (Inventor)

    1994-01-01

    This invention is a semi-interpentrating polymer network which includes a high performance thermosetting polyimide having a nadic end group acting as a crosslinking site and a high performance linear thermoplastic polyimide. Provided is an improved high temperature matrix resin which is capable of performing in the 200 to 300 C range. This resin has significantly improved toughness and microcracking resistance, excellent processability, mechanical performance, and moisture and solvent resistances.

  6. Patterned polycrystalline diamond microtip vacuum diode arrays

    SciTech Connect

    Kang, W.P.; Davidson, J.L.; Kinser, D.L.

    1995-12-31

    Electron field emission from an array of patterned pyramids of polycrystalline diamond for vacuum diode applications has been investigated. High current emission from the patterned diamond microtip arrays are obtained at low electric fields. A current density from the diamond microtips of 14mA/cm{sup 2} was observed for a field of <10 V/{mu}m. Field emission for these diamond microtips exhibits significant enhancement both in total emission current and stability compared to pure silicon emitters. Moreover, field emission from patterned polycrystalline diamond pyramidal tip arrays is unique in that the applied field is found to be lower (2-3 order of magnitude lower) compared to that required for emission from Si, Ge, GaAs, and metal surfaces. The fabrication process utilizing silicon shaping and micromachining techniques for the fabrication of diamond diaphragms with diamond microtip arrays for vacuum microelectronic applications has been developed. The processing techniques are compatible with IC fabrication technology. The effect of temperature annealing on the current emission characteristics were also investigated.

  7. Polycrystalline thin-films

    NASA Astrophysics Data System (ADS)

    Zweibel, K.; Mitchell, R.

    1986-02-01

    This annual report summarizes the status, accomplishments, and projected future research directions of the Polycrystalline Thin Film Task in the Photovoltaic Program Branch of the Solar Energy Research Institute's Solar Electric Research Division. Major subcontracted work in this area has concentrated on development of CuInSe2 and CdTe technologies. During FY 1985, major progress was achieved by subcontractors in: (1) developing a new, low-cost method of fabricating CuInSe2, and (2) improving the efficiency of CuInSe2 devices by about 10% (relative). The report also lists research planned to meet the Department of Energy's goals in these technologies.

  8. INL High Performance Building Strategy

    SciTech Connect

    Jennifer D. Morton

    2010-02-01

    High performance buildings, also known as sustainable buildings and green buildings, are resource efficient structures that minimize the impact on the environment by using less energy and water, reduce solid waste and pollutants, and limit the depletion of natural resources while also providing a thermally and visually comfortable working environment that increases productivity for building occupants. As Idaho National Laboratory (INL) becomes the nation’s premier nuclear energy research laboratory, the physical infrastructure will be established to help accomplish this mission. This infrastructure, particularly the buildings, should incorporate high performance sustainable design features in order to be environmentally responsible and reflect an image of progressiveness and innovation to the public and prospective employees. Additionally, INL is a large consumer of energy that contributes to both carbon emissions and resource inefficiency. In the current climate of rising energy prices and political pressure for carbon reduction, this guide will help new construction project teams to design facilities that are sustainable and reduce energy costs, thereby reducing carbon emissions. With these concerns in mind, the recommendations described in the INL High Performance Building Strategy (previously called the INL Green Building Strategy) are intended to form the INL foundation for high performance building standards. This revised strategy incorporates the latest federal and DOE orders (Executive Order [EO] 13514, “Federal Leadership in Environmental, Energy, and Economic Performance” [2009], EO 13423, “Strengthening Federal Environmental, Energy, and Transportation Management” [2007], and DOE Order 430.2B, “Departmental Energy, Renewable Energy, and Transportation Management” [2008]), the latest guidelines, trends, and observations in high performance building construction, and the latest changes to the Leadership in Energy and Environmental Design

  9. High performance computing applications in neurobiological research

    NASA Technical Reports Server (NTRS)

    Ross, Muriel D.; Cheng, Rei; Doshay, David G.; Linton, Samuel W.; Montgomery, Kevin; Parnas, Bruce R.

    1994-01-01

    The human nervous system is a massively parallel processor of information. The vast numbers of neurons, synapses and circuits is daunting to those seeking to understand the neural basis of consciousness and intellect. Pervading obstacles are lack of knowledge of the detailed, three-dimensional (3-D) organization of even a simple neural system and the paucity of large scale, biologically relevant computer simulations. We use high performance graphics workstations and supercomputers to study the 3-D organization of gravity sensors as a prototype architecture foreshadowing more complex systems. Scaled-down simulations run on a Silicon Graphics workstation and scale-up, three-dimensional versions run on the Cray Y-MP and CM5 supercomputers.

  10. High-performance membrane chromatography.

    PubMed

    Belenkii, B G; Malt'sev, V G

    1995-02-01

    In gradient chromatography for proteins migrating along the chromatographic column, the critical distance X0 has been shown to exist at which the separation of zones is at a maximum and band spreading is at a minimum. With steep gradients and small elution velocity, the column length may be reduced to the level of membrane thickness--about one millimeter. The peculiarities of this novel separation method for proteins, high-performance membrane chromatography (HPMC), are discussed and stepwise elution is shown to be especially effective. HPMC combines the advantages of membrane technology and high-performance liquid chromatography, and avoids their drawbacks. PMID:7727132

  11. High performance flexible heat pipes

    NASA Technical Reports Server (NTRS)

    Shaubach, R. M.; Gernert, N. J.

    1985-01-01

    A Phase I SBIR NASA program for developing and demonstrating high-performance flexible heat pipes for use in the thermal management of spacecraft is examined. The program combines several technologies such as flexible screen arteries and high-performance circumferential distribution wicks within an envelope which is flexible in the adiabatic heat transport zone. The first six months of work during which the Phase I contract goal were met, are described. Consideration is given to the heat-pipe performance requirements. A preliminary evaluation shows that the power requirement for Phase II of the program is 30.5 kilowatt meters at an operating temperature from 0 to 100 C.

  12. Polycrystalline semiconductor processing

    DOEpatents

    Glaeser, Andreas M.; Haggerty, John S.; Danforth, Stephen C.

    1983-01-01

    A process for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film. A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by imgingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step.

  13. Polycrystalline semiconductor processing

    DOEpatents

    Glaeser, A.M.; Haggerty, J.S.; Danforth, S.C.

    1983-04-05

    A process is described for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film. A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by impingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step. 10 figs.

  14. Panelized high performance multilayer insulation

    NASA Technical Reports Server (NTRS)

    Burkley, R. A.; Shriver, C. B.; Stuckey, J. M.

    1968-01-01

    Multilayer insulation coverings with low conductivity foam spacers are interleaved with quarter mil aluminized polymer film radiation shields to cover flight type liquid hydrogen tankage of space vehicles with a removable, structurally compatible, lightweight, high performance cryogenic insulation capable of surviving extended space mission environments.

  15. High performance rolling element bearing

    NASA Technical Reports Server (NTRS)

    Bursey, Jr., Roger W. (Inventor); Olinger, Jr., John B. (Inventor); Owen, Samuel S. (Inventor); Poole, William E. (Inventor); Haluck, David A. (Inventor)

    1993-01-01

    A high performance rolling element bearing (5) which is particularly suitable for use in a cryogenically cooled environment, comprises a composite cage (45) formed from glass fibers disposed in a solid lubricant matrix of a fluorocarbon polymer. The cage includes inserts (50) formed from a mixture of a soft metal and a solid lubricant such as a fluorocarbon polymer.

  16. High Performance Bulk Thermoelectric Materials

    SciTech Connect

    Ren, Zhifeng

    2013-03-31

    Over 13 plus years, we have carried out research on electron pairing symmetry of superconductors, growth and their field emission property studies on carbon nanotubes and semiconducting nanowires, high performance thermoelectric materials and other interesting materials. As a result of the research, we have published 104 papers, have educated six undergraduate students, twenty graduate students, nine postdocs, nine visitors, and one technician.

  17. High performance hand-held gas chromatograph

    SciTech Connect

    Yu, C.M.

    1998-04-28

    The Microtechnology Center of Lawrence Livermore National Laboratory has developed a high performance hand-held, real time detection gas chromatograph (HHGC) by Micro-Electro-Mechanical-System (MEMS) technology. The total weight of this hand-held gas chromatograph is about five lbs., with a physical size of 8{close_quotes} x 5{close_quotes} x 3{close_quotes} including carrier gas and battery. It consumes about 12 watts of electrical power with a response time on the order of one to two minutes. This HHGC has an average effective theoretical plate of about 40k. Presently, its sensitivity is limited by its thermal sensitive detector at PPM. Like a conventional G.C., this HHGC consists mainly of three major components: (1) the sample injector, (2) the column, and (3) the detector with related electronics. The present HHGC injector is a modified version of the conventional injector. Its separation column is fabricated completely on silicon wafers by means of MEMS technology. This separation column has a circular cross section with a diameter of 100 pm. The detector developed for this hand-held GC is a thermal conductivity detector fabricated on a silicon nitride window by MEMS technology. A normal Wheatstone bridge is used. The signal is fed into a PC and displayed through LabView software.

  18. Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography

    SciTech Connect

    Han, Bin Takamizawa, Hisashi Shimizu, Yasuo; Inoue, Koji; Nagai, Yasuyoshi; Yano, Fumiko; Kunimune, Yorinobu; Inoue, Masao; Nishida, Akio

    2015-07-13

    The dopant (P and B) diffusion path in n- and p-types polycrystalline-Si gates of trench-type three-dimensional (3D) metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated using atom probe tomography, based on the annealing time dependence of the dopant distribution at 900 °C. Remarkable differences were observed between P and B diffusion behavior. In the initial stage of diffusion, P atoms diffuse into deeper regions from the implanted region along grain boundaries in the n-type polycrystalline-Si gate. With longer annealing times, segregation of P on the grain boundaries was observed; however, few P atoms were observed within the large grains or on the gate/gate oxide interface distant from grain boundaries. These results indicate that P atoms diffuse along grain boundaries much faster than through the bulk or along the gate/gate oxide interface. On the other hand, in the p-type polycrystalline-Si gate, segregation of B was observed only at the initial stage of diffusion. After further annealing, the B atoms became uniformly distributed, and no clear segregation of B was observed. Therefore, B atoms diffuse not only along the grain boundary but also through the bulk. Furthermore, B atoms diffused deeper than P atoms along the grain boundaries under the same annealing conditions. This information on the diffusion behavior of P and B is essential for optimizing annealing conditions in order to control the P and B distributions in the polycrystalline-Si gates of trench-type 3D MOSFETs.

  19. A Linux Workstation for High Performance Graphics

    NASA Technical Reports Server (NTRS)

    Geist, Robert; Westall, James

    2000-01-01

    The primary goal of this effort was to provide a low-cost method of obtaining high-performance 3-D graphics using an industry standard library (OpenGL) on PC class computers. Previously, users interested in doing substantial visualization or graphical manipulation were constrained to using specialized, custom hardware most often found in computers from Silicon Graphics (SGI). We provided an alternative to expensive SGI hardware by taking advantage of third-party, 3-D graphics accelerators that have now become available at very affordable prices. To make use of this hardware our goal was to provide a free, redistributable, and fully-compatible OpenGL work-alike library so that existing bodies of code could simply be recompiled. for PC class machines running a free version of Unix. This should allow substantial cost savings while greatly expanding the population of people with access to a serious graphics development and viewing environment. This should offer a means for NASA to provide a spectrum of graphics performance to its scientists, supplying high-end specialized SGI hardware for high-performance visualization while fulfilling the requirements of medium and lower performance applications with generic, off-the-shelf components and still maintaining compatibility between the two.

  20. High-Performance Photovoltaic Project: Identifying Critical Pathways; Kickoff Meeting

    SciTech Connect

    Symko-Davis, M.

    2001-11-07

    The High Performance Photovoltaic Project held a Kickoff Meeting in October, 2001. This booklet contains the presentations given by subcontractors and in-house teams at that meeting. The areas of subcontracted research under the HiPer project include Polycrystalline Thin Films and Multijunction Concentrators. The in-house teams in this initiative will focus on three areas: (1) High-Performance Thin-Film Team-leads the investigation of tandem structures and low-flux concentrators, (2) High-Efficiency Concepts and Concentrators Team-an expansion of an existing team that leads the development of high-flux concentrators, and (3) Thin-Film Process Integration Team-will perform fundamental process and characterization research, to resolve the complex issues of making thin-film multijunction devices.

  1. Gelcasting Polycrystalline Alumina

    SciTech Connect

    Janney, M.A.; Zuk, K.J.; Wei, G.C.

    2000-01-01

    OSRAM SYLVANIA INC. is a major U.S. manufacturer of high-intensity lighting. Among its products is the Lumalux TM line of high-pressure sodium vapor arc lamps, which are used for industrial, highway, and street lighting. The key to the performance of these lamps is the polycrystalline alumina (PCA) tube that is used to contain the plasma that is formed in the electric arc. That plasma consists of ionized sodium, mercury, and xenon vapors. The key attributes of the PCA tubes are their transparency ({approximately}97% total transmittance in the visible), their refractoriness (inner wall temperature can reach l2OOC), and their chemical resistance (sodium and mercury vapor are extremely corrosive). The current efficiency of the lamps is very high, up to 100 initial lumens per watt. (Compare incandescent lamps 10-20 lumens per watt, fluorescent lamps 25-90 lumens per watt.)

  2. Polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Zweibel, K.; Mitchell, R.; Ullal, H.

    1987-02-01

    This annual report for fiscal year 1986 summarizes the status, accomplishments, and projected future research directions of the Polycrystalline Thin Film Task in the Photovoltaic Program Branch of the Solar Energy Research Institute's Solar Electric Research Division. Subcontracted work in this area has concentrated on the development of CuInSe2 and CdTe technologies. During FY 1986, major progress was achieved by subcontractors in (1) achieving 10.5% (SERI-verified) efficiency with CdTe, (2) improving the efficiency of selenized CuInSe2 solar cells to nearly 8%, and (3) developing a transparent contact to CdTe cells for potential use in the top cells of tandem structures.

  3. National solar technology roadmap: Film-silicon PV

    SciTech Connect

    Keyes, Brian

    2007-06-01

    Silicon photovoltaic (PV) technologies are addressed in two different technology roadmaps: Film-Silicon PV and Wafer-Silicon PV. This Film-Silicon PV roadmap applies to all silicon-film technologies that rely on a supporting substrate such as glass, polymer, aluminum, stainless steel, or metallurgical-grade silicon. Such devices typically use amorphous, nanocrystalline, fine-grained polycrystalline, or epitaxial silicon layers that are 1–20 μm thick.

  4. High performance bilateral telerobot control.

    PubMed

    Kline-Schoder, Robert; Finger, William; Hogan, Neville

    2002-01-01

    Telerobotic systems are used when the environment that requires manipulation is not easily accessible to humans, as in space, remote, hazardous, or microscopic applications or to extend the capabilities of an operator by scaling motions and forces. The Creare control algorithm and software is an enabling technology that makes possible guaranteed stability and high performance for force-feedback telerobots. We have developed the necessary theory, structure, and software design required to implement high performance telerobot systems with time delay. This includes controllers for the master and slave manipulators, the manipulator servo levels, the communication link, and impedance shaping modules. We verified the performance using both bench top hardware as well as a commercial microsurgery system. PMID:15458092

  5. High performance dielectric materials development

    NASA Technical Reports Server (NTRS)

    Piche, Joe; Kirchner, Ted; Jayaraj, K.

    1994-01-01

    The mission of polymer composites materials technology is to develop materials and processing technology to meet DoD and commercial needs. The following are outlined in this presentation: high performance capacitors, high temperature aerospace insulation, rationale for choosing Foster-Miller (the reporting industry), the approach to the development and evaluation of high temperature insulation materials, and the requirements/evaluation parameters. Supporting tables and diagrams are included.

  6. High performance ammonium nitrate propellant

    NASA Technical Reports Server (NTRS)

    Anderson, F. A. (Inventor)

    1979-01-01

    A high performance propellant having greatly reduced hydrogen chloride emission is presented. It is comprised of: (1) a minor amount of hydrocarbon binder (10-15%), (2) at least 85% solids including ammonium nitrate as the primary oxidizer (about 40% to 70%), (3) a significant amount (5-25%) powdered metal fuel, such as aluminum, (4) a small amount (5-25%) of ammonium perchlorate as a supplementary oxidizer, and (5) optionally a small amount (0-20%) of a nitramine.

  7. New, high performance rotating parachute

    SciTech Connect

    Pepper, W.B. Jr.

    1983-01-01

    A new rotating parachute has been designed primarily for recovery of high performance reentry vehicles. Design and development/testing results are presented from low-speed wind tunnel testing, free-flight deployments at transonic speeds and tests in a supersonic wind tunnel at Mach 2.0. Drag coefficients of 1.15 based on the 2-ft diameter of the rotor have been measured in the wind tunnel. Stability of the rotor is excellent.

  8. Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

    PubMed

    Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

    2015-05-01

    Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems. PMID:25867894

  9. High Performance Tools And Technologies

    SciTech Connect

    Collette, M R; Corey, I R; Johnson, J R

    2005-01-24

    This goal of this project was to evaluate the capability and limits of current scientific simulation development tools and technologies with specific focus on their suitability for use with the next generation of scientific parallel applications and High Performance Computing (HPC) platforms. The opinions expressed in this document are those of the authors, and reflect the authors' current understanding and functionality of the many tools investigated. As a deliverable for this effort, we are presenting this report describing our findings along with an associated spreadsheet outlining current capabilities and characteristics of leading and emerging tools in the high performance computing arena. This first chapter summarizes our findings (which are detailed in the other chapters) and presents our conclusions, remarks, and anticipations for the future. In the second chapter, we detail how various teams in our local high performance community utilize HPC tools and technologies, and mention some common concerns they have about them. In the third chapter, we review the platforms currently or potentially available to utilize these tools and technologies on to help in software development. Subsequent chapters attempt to provide an exhaustive overview of the available parallel software development tools and technologies, including their strong and weak points and future concerns. We categorize them as debuggers, memory checkers, performance analysis tools, communication libraries, data visualization programs, and other parallel development aides. The last chapter contains our closing information. Included with this paper at the end is a table of the discussed development tools and their operational environment.

  10. Computational characterizations on the grain-size-dependent properties of polycrystalline nanomaterials

    NASA Astrophysics Data System (ADS)

    Hyun, Sangil; Park, Youngho; Kim, Hyo-tae

    2015-12-01

    The microstructures of real nanomaterials can be quite complex with variety of grain sizes aligned in different crystal orientations and structural defects possibly created in a fabrication process. Material properties of these polycrystalline materials are generally known strongly dependent on the nanoscale morphology. First principle calculations based on the density functional theory need to be employed in these atomic characterizations; however, it may not be suitable for the polycrystalline nanomaterials for which large number of atoms is required in the simulation model. Instead, a mesoscale computer simulation scheme is employed to investigate these morphology-dependent mechanical properties of polycrystalline materials. We demonstrated the Voronoi construction of various polycrystalline atomic models such as two-dimensional graphene and three-dimensional silicon carbide. General behavior of the mechanical characteristics of the bulk nanostructured silicon carbide (SiC) was addressed, particularly the contribution of grain sizes. From this study, the optimal grain size was determined near 10 nm under tensile and compressive deformations.

  11. Silicon-on-ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

    NASA Technical Reports Server (NTRS)

    Whitehead, A. B.; Zook, J. D.; Grung, B. L.; Heaps, J. D.; Schmit, F.; Schuldt, S. B.; Chapman, P. W.

    1981-01-01

    The technical feasibility of producing solar cell quality sheet silicon to meet the DOE 1986 cost goal of 70 cents/watt was investigated. The silicon on ceramic approach is to coat a low cost ceramic substrate with large grain polycrystalline silicon by unidirectional solidification of molten silicon. Results and accomplishments are summarized.

  12. Abnormality in fracture strength of polycrystalline silicene

    NASA Astrophysics Data System (ADS)

    Liu, Ning; Hong, Jiawang; Pidaparti, Ramana; Wang, Xianqiao

    2016-09-01

    Silicene, a silicon-based homologue of graphene, arouses great interest in nano-electronic devices due to its outstanding electronic properties. However, its promising electronic applications are greatly hindered by lack of understanding in the mechanical strength of silicene. Therefore, in order to design mechanically reliable devices with silicene, it is necessary to thoroughly explore the mechanical properties of silicene. Due to current fabrication methods, graphene is commonly produced in a polycrystalline form; the same may hold for silicene. Here we perform molecular dynamics simulations to investigate the mechanical properties of polycrystalline silicene. First, an annealing process is employed to construct a more realistic modeling structure of polycrystalline silicene. Results indicate that a more stable structure is formed due to the breaking and reformation of bonds between atoms on the grain boundaries. Moreover, as the grain size decreases, the efficiency of the annealing process, which is quantified by the energy change, increases. Subsequently, biaxial tensile tests are performed on the annealed samples in order to explore the relation between grain size and mechanical properties, namely in-plane stiffness, fracture strength and fracture strain etc. Results indicate that as the grain size decreases, the fracture strain increases while the fracture strength shows an inverse trend. The decreasing fracture strength may be partly attributed to the weakening effect from the increasing area density of defects which acts as the reservoir of stress-concentrated sites on the grain boundary. The observed crack localization and propagation and fracture strength are well-explained by a defect-pileup model.

  13. Low temperature production of large-grain polycrystalline semiconductors

    DOEpatents

    Naseem, Hameed A.; Albarghouti, Marwan

    2007-04-10

    An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

  14. Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies.

    PubMed

    Labram, John G; Lin, Yen-Hung; Anthopoulos, Thomas D

    2015-11-01

    In the last decade, metal oxides have emerged as a fascinating class of electronic material, exhibiting a wide range of unique and technologically relevant characteristics. For example, thin-film transistors formed from amorphous or polycrystalline metal oxide semiconductors offer the promise of low-cost, large-area, and flexible electronics, exhibiting performances comparable to or in excess of incumbent silicon-based technologies. Atomically flat interfaces between otherwise insulating or semiconducting complex oxides, are also found to be highly conducting, displaying 2-dimensional (2D) charge transport properties, strong correlations, and even superconductivity. Field-effect devices employing such carefully engineered interfaces are hoped to one day compete with traditional group IV or III-V semiconductors for use in the next-generation of high-performance electronics. In this Concept article we provide an overview of the different metal oxide transistor technologies and potential future research directions. In particular, we look at the recent reports of multilayer oxide thin-film transistors and the possibility of 2D electron transport in these disordered/polycrystalline systems and discuss the potential of the technology for applications in large-area electronics. PMID:26349850

  15. High-Performance Thermoelectric Semiconductors

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre; Caillat, Thierry; Borshchevsky, Alexander

    1994-01-01

    Figures of merit almost double current state-of-art thermoelectric materials. IrSb3 is semiconductor found to exhibit exceptional thermoelectric properties. CoSb3 and RhSb3 have same skutterudite crystallographic structure as IrSb3, and exhibit exceptional transport properties expected to contribute to high thermoelectric performance. These three compounds form solid solutions. Combination of properties offers potential for development of new high-performance thermoelectric materials for more efficient thermoelectric power generators, coolers, and detectors.

  16. High-performance combinatorial algorithms

    SciTech Connect

    Pinar, Ali

    2003-10-31

    Combinatorial algorithms have long played an important role in many applications of scientific computing such as sparse matrix computations and parallel computing. The growing importance of combinatorial algorithms in emerging applications like computational biology and scientific data mining calls for development of a high performance library for combinatorial algorithms. Building such a library requires a new structure for combinatorial algorithms research that enables fast implementation of new algorithms. We propose a structure for combinatorial algorithms research that mimics the research structure of numerical algorithms. Numerical algorithms research is nicely complemented with high performance libraries, and this can be attributed to the fact that there are only a small number of fundamental problems that underlie numerical solvers. Furthermore there are only a handful of kernels that enable implementation of algorithms for these fundamental problems. Building a similar structure for combinatorial algorithms will enable efficient implementations for existing algorithms and fast implementation of new algorithms. Our results will promote utilization of combinatorial techniques and will impact research in many scientific computing applications, some of which are listed.

  17. High performance rotational vibration isolator

    NASA Astrophysics Data System (ADS)

    Sunderland, Andrew; Blair, David G.; Ju, Li; Golden, Howard; Torres, Francis; Chen, Xu; Lockwood, Ray; Wolfgram, Peter

    2013-10-01

    We present a new rotational vibration isolator with an extremely low resonant frequency of 0.055 ± 0.002 Hz. The isolator consists of two concentric spheres separated by a layer of water and joined by very soft silicone springs. The isolator reduces rotation noise at all frequencies above its resonance which is very important for airborne mineral detection. We show that more than 40 dB of isolation is achieved in a helicopter survey for rotations at frequencies between 2 Hz and 20 Hz. Issues affecting performance such as translation to rotation coupling and temperature are discussed. The isolator contains almost no metal, making it particularly suitable for electromagnetic sensors.

  18. High performance storable propellant resistojet

    NASA Technical Reports Server (NTRS)

    Vaughan, C. E.

    1992-01-01

    From 1965 until 1985 resistojets were used for a limited number of space missions. Capability increased in stages from an initial application using a 90 W gN2 thruster operating at 123 sec specific impulse (Isp) to a 830 W N2H4 thruster operating at 305 sec Isp. Prior to 1985 fewer than 100 resistojets were known to have been deployed on spacecraft. Building on this base NASA embarked upon the High Performance Storable Propellant Resistojet (HPSPR) program to significantly advance the resistojet state-of-the-art. Higher performance thrusters promised to increase the market demand for resistojets and enable space missions requiring higher performance. During the program three resistojets were fabricated and tested. High temperature wire and coupon materials tests were completed. A life test was conducted on an advanced gas generator.

  19. High performance magnetically controllable microturbines.

    PubMed

    Tian, Ye; Zhang, Yong-Lai; Ku, Jin-Feng; He, Yan; Xu, Bin-Bin; Chen, Qi-Dai; Xia, Hong; Sun, Hong-Bo

    2010-11-01

    Reported in this paper is two-photon photopolymerization (TPP) fabrication of magnetic microturbines with high surface smoothness towards microfluids mixing. As the key component of the magnetic photoresist, Fe(3)O(4) nanoparticles were carefully screened for homogeneous doping. In this work, oleic acid stabilized Fe(3)O(4) nanoparticles synthesized via high-temperature induced organic phase decomposition of an iron precursor show evident advantages in particle morphology. After modification with propoxylated trimethylolpropane triacrylate (PO(3)-TMPTA, a kind of cross-linker), the magnetic nanoparticles were homogeneously doped in acrylate-based photoresist for TPP fabrication of microstructures. Finally, a magnetic microturbine was successfully fabricated as an active mixing device for remote control of microfluids blending. The development of high quality magnetic photoresists would lead to high performance magnetically controllable microdevices for lab-on-a-chip (LOC) applications. PMID:20721411

  20. FPGA Based High Performance Computing

    SciTech Connect

    Bennett, Dave; Mason, Jeff; Sundararajan, Prasanna; Dellinger, Erik; Putnam, Andrew; Storaasli, Olaf O

    2008-01-01

    Current high performance computing (HPC) applications are found in many consumer, industrial and research fields. From web searches to auto crash simulations to weather predictions, these applications require large amounts of power by the compute farms and supercomputers required to run them. The demand for more and faster computation continues to increase along with an even sharper increase in the cost of the power required to operate and cool these installations. The ability of standard processor based systems to address these needs has declined in both speed of computation and in power consumption over the past few years. This paper presents a new method of computation based upon programmable logic as represented by Field Programmable Gate Arrays (FPGAs) that addresses these needs in a manner requiring only minimal changes to the current software design environment.

  1. High Performance Parallel Computational Nanotechnology

    NASA Technical Reports Server (NTRS)

    Saini, Subhash; Craw, James M. (Technical Monitor)

    1995-01-01

    At a recent press conference, NASA Administrator Dan Goldin encouraged NASA Ames Research Center to take a lead role in promoting research and development of advanced, high-performance computer technology, including nanotechnology. Manufacturers of leading-edge microprocessors currently perform large-scale simulations in the design and verification of semiconductor devices and microprocessors. Recently, the need for this intensive simulation and modeling analysis has greatly increased, due in part to the ever-increasing complexity of these devices, as well as the lessons of experiences such as the Pentium fiasco. Simulation, modeling, testing, and validation will be even more important for designing molecular computers because of the complex specification of millions of atoms, thousands of assembly steps, as well as the simulation and modeling needed to ensure reliable, robust and efficient fabrication of the molecular devices. The software for this capacity does not exist today, but it can be extrapolated from the software currently used in molecular modeling for other applications: semi-empirical methods, ab initio methods, self-consistent field methods, Hartree-Fock methods, molecular mechanics; and simulation methods for diamondoid structures. In as much as it seems clear that the application of such methods in nanotechnology will require powerful, highly powerful systems, this talk will discuss techniques and issues for performing these types of computations on parallel systems. We will describe system design issues (memory, I/O, mass storage, operating system requirements, special user interface issues, interconnects, bandwidths, and programming languages) involved in parallel methods for scalable classical, semiclassical, quantum, molecular mechanics, and continuum models; molecular nanotechnology computer-aided designs (NanoCAD) techniques; visualization using virtual reality techniques of structural models and assembly sequences; software required to

  2. High Performance Proactive Digital Forensics

    NASA Astrophysics Data System (ADS)

    Alharbi, Soltan; Moa, Belaid; Weber-Jahnke, Jens; Traore, Issa

    2012-10-01

    With the increase in the number of digital crimes and in their sophistication, High Performance Computing (HPC) is becoming a must in Digital Forensics (DF). According to the FBI annual report, the size of data processed during the 2010 fiscal year reached 3,086 TB (compared to 2,334 TB in 2009) and the number of agencies that requested Regional Computer Forensics Laboratory assistance increasing from 689 in 2009 to 722 in 2010. Since most investigation tools are both I/O and CPU bound, the next-generation DF tools are required to be distributed and offer HPC capabilities. The need for HPC is even more evident in investigating crimes on clouds or when proactive DF analysis and on-site investigation, requiring semi-real time processing, are performed. Although overcoming the performance challenge is a major goal in DF, as far as we know, there is almost no research on HPC-DF except for few papers. As such, in this work, we extend our work on the need of a proactive system and present a high performance automated proactive digital forensic system. The most expensive phase of the system, namely proactive analysis and detection, uses a parallel extension of the iterative z algorithm. It also implements new parallel information-based outlier detection algorithms to proactively and forensically handle suspicious activities. To analyse a large number of targets and events and continuously do so (to capture the dynamics of the system), we rely on a multi-resolution approach to explore the digital forensic space. Data set from the Honeynet Forensic Challenge in 2001 is used to evaluate the system from DF and HPC perspectives.

  3. Nucleation and growth studies of polycrystalline covalent materials

    NASA Astrophysics Data System (ADS)

    Yun, Jungheum

    The chemical vapor deposition of different covalent polycrystalline materials---including diamond, silicon carbide, and carbon nitride---in stagnation flow reactors was rigorously simulated to determine the nucleation and growth mechanisms of these materials. Kinetic models were used to predict the rates of gas-phase and surface chemistry, the temperature and velocity profiles, potential gaseous film growth precursors, the time evolution of nucleation and intermediate layer formation, and the morphological evolution of continuous polycrystalline films. Numerical studies were also carried out to determine the dependence of the kinetics of nucleation and subsequent polycrystalline film growth on operating conditions. The calculated results for carbon nitride deposition indicate that the experimentally measured bond types in the carbon nitride films must result from chemical bond rearrangement occurring on the deposition surface or in the bulk phase once gaseous film growth precursors, including C, CH2 , CH3, C2H2, N, NH, NH2, HCN, and H2CN, are adsorbed. Of these precursors, C and CH 3 dominate the carbon contribution to carbon nitride film growth, and atomic nitrogen is the principal nitrogen bearing species. When the evolution rates of a silicon carbide intermediate layer and diamond clusters are calculated by accounting for gas-phase and surface reactions, surface and bulk diffusion, the mechanism for intermediate layer formation, and heterogeneous diamond nucleation kinetics, it is predicted that higher adsorption energies, in the range of 3.7 to 4.5 eV, lead to larger surface adatom densities, lower saturated nucleation densities, and larger silicon carbide intermediate layer thicknesses. The intermediate layer thickness becomes saturated while the growing diamond nuclei still cover a very small fraction of the silicon carbide. Reports of heteroepitaxial diamond nucleation without silicon carbide intermediate layer formation may be readily explained by a

  4. The electrical conduction properties of poly-crystalline indium-zinc-oxide film

    SciTech Connect

    Tomai, S.; Terai, K.; Junke, T.; Tsuruma, Y.; Ebata, K.; Yano, K.; Uraoka, Y.

    2014-02-28

    We have developed a high-mobility and high-uniform oxide semiconductor using poly-crystalline semiconductor material composed of indium and zinc (p-IZO). A typical conduction mechanism of p-IZO film was demonstrated by the grain boundary scattering model as in polycrystalline silicon. The grain boundary potential of the 2-h-annealed IZO film was calculated to be 100 meV, which was comparable to that of the polycrystalline silicon. However, the p-IZO thin film transistor (TFT) measurement shows rather uniform characteristics. It denotes that the mobility deterioration around the grain boundaries is lower than the case for low-temperature polycrystalline silicon. This assertion was made based on the difference of the mobility between the polycrystalline and amorphous IZO film being much smaller than is the case for silicon transistors. Therefore, we conclude that the p-IZO is a promising material for a TFT channel, which realizes high drift mobility and uniformity simultaneously.

  5. Continuous method of producing silicon carbide fibers

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Nguyen, Kimmai Thi (Inventor); Rabe, James Alan (Inventor)

    1999-01-01

    This invention pertains to a method for production of polycrystalline ceramic fibers from silicon oxycarbide (SiCO) ceramic fibers wherein the method comprises heating an amorphous ceramic fiber containing silicon and carbon in an inert environment comprising a boron oxide and carbon monoxide at a temperature sufficient to convert the amorphous ceramic fiber to a polycrystalline ceramic fiber. By having carbon monoxide present during the heating of the ceramic fiber, it is possible to achieve higher production rates on a continuous process.

  6. Gelcasting polycrystalline alumina

    SciTech Connect

    Janney, M.A.

    1997-04-01

    This work is being done as part of a CRADA with Osram-Sylvania, Inc. (OSI) OSI is a major U.S. manufacturer of high-intensity lighting. Among its products is the Lumalux{reg_sign} line of high-pressure sodium vapor arc lamps, which are used for industrial, highway, and street lighting. The key to the performance of these lamps is the polycrystalline alumina (PCA) tube that is used to contain the plasma that is formed in the electric arc. That plasma consists of ionized sodium, mercury, and xenon vapors. The key attributes of the PCA tubes are their transparency (95% total transmittance in the visible region), their refractoriness (inner wall temperature can reach 1400{degrees}C), and their chemical resistance (sodium and mercury vapor are extremely corrosive). The current efficiency of the lamps is very high, on the order of several hundred lumens / watt. (Compare - incandescent lamps -13 lumens/watt fluorescent lamps -30 lumens/watt.) Osram-Sylvania would like to explore using gelcasting to form PCA tubes for Lumalux{reg_sign} lamps, and eventually for metal halide lamps (known as quartz-halogen lamps). Osram-Sylvania, Inc. currently manufactures PCA tubes by isostatic pressing. This process works well for the shapes that they presently use. However, there are several types of tubes that are either difficult or impossible to make by isostatic pressing. It is the desire to make these new shapes and sizes of tubes that has prompted Osram-Sylvania`s interest in gelcasting. The purpose of the CRADA is to determine the feasibility of making PCA items having sufficient optical quality that they are useful in lighting applications using gelcasting.

  7. High performance Cu adhesion coating

    SciTech Connect

    Lee, K.W.; Viehbeck, A.; Chen, W.R.; Ree, M.

    1996-12-31

    Poly(arylene ether benzimidazole) (PAEBI) is a high performance thermoplastic polymer with imidazole functional groups forming the polymer backbone structure. It is proposed that upon coating PAEBI onto a copper surface the imidazole groups of PAEBI form a bond with or chelate to the copper surface resulting in strong adhesion between the copper and polymer. Adhesion of PAEBI to other polymers such as poly(biphenyl dianhydride-p-phenylene diamine) (BPDA-PDA) polyimide is also quite good and stable. The resulting locus of failure as studied by XPS and IR indicates that PAEBI gives strong cohesive adhesion to copper. Due to its good adhesion and mechanical properties, PAEBI can be used in fabricating thin film semiconductor packages such as multichip module dielectric (MCM-D) structures. In these applications, a thin PAEBI coating is applied directly to a wiring layer for enhancing adhesion to both the copper wiring and the polymer dielectric surface. In addition, a thin layer of PAEBI can also function as a protection layer for the copper wiring, eliminating the need for Cr or Ni barrier metallurgies and thus significantly reducing the number of process steps.

  8. ALMA high performance nutating subreflector

    NASA Astrophysics Data System (ADS)

    Gasho, Victor L.; Radford, Simon J. E.; Kingsley, Jeffrey S.

    2003-02-01

    For the international ALMA project"s prototype antennas, we have developed a high performance, reactionless nutating subreflector (chopping secondary mirror). This single axis mechanism can switch the antenna"s optical axis by +/-1.5" within 10 ms or +/-5" within 20 ms and maintains pointing stability within the antenna"s 0.6" error budget. The light weight 75 cm diameter subreflector is made of carbon fiber composite to achieve a low moment of inertia, <0.25 kg m2. Its reflecting surface was formed in a compression mold. Carbon fiber is also used together with Invar in the supporting structure for thermal stability. Both the subreflector and the moving coil motors are mounted on flex pivots and the motor magnets counter rotate to absorb the nutation reaction force. Auxiliary motors provide active damping of external disturbances, such as wind gusts. Non contacting optical sensors measure the positions of the subreflector and the motor rocker. The principle mechanical resonance around 20 Hz is compensated with a digital PID servo loop that provides a closed loop bandwidth near 100 Hz. Shaped transitions are used to avoid overstressing mechanical links.

  9. High performance aerated lagoon systems

    SciTech Connect

    Rich, L.

    1999-08-01

    At a time when less money is available for wastewater treatment facilities and there is increased competition for the local tax dollar, regulatory agencies are enforcing stricter effluent limits on treatment discharges. A solution for both municipalities and industry is to use aerated lagoon systems designed to meet these limits. This monograph, prepared by a recognized expert in the field, provides methods for the rational design of a wide variety of high-performance aerated lagoon systems. Such systems range from those that can be depended upon to meet secondary treatment standards alone to those that, with the inclusion of intermittent sand filters or elements of sequenced biological reactor (SBR) technology, can also provide for nitrification and nutrient removal. Considerable emphasis is placed on the use of appropriate performance parameters, and an entire chapter is devoted to diagnosing performance failures. Contents include: principles of microbiological processes, control of algae, benthal stabilization, design for CBOD removal, design for nitrification and denitrification in suspended-growth systems, design for nitrification in attached-growth systems, phosphorus removal, diagnosing performance.

  10. Process for forming retrograde profiles in silicon

    DOEpatents

    Weiner, Kurt H.; Sigmon, Thomas W.

    1996-01-01

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  11. Process for forming retrograde profiles in silicon

    DOEpatents

    Weiner, K.H.; Sigmon, T.W.

    1996-10-15

    A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  12. Porous silicon gettering

    SciTech Connect

    Tsuo, Y.S.; Menna, P.; Pitts, J.R.

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  13. High Performance Solution Processable TFTs

    NASA Astrophysics Data System (ADS)

    Gundlach, David

    2008-03-01

    Organic-based electronic devices offer the potential to significantly impact the functionality and pervasiveness of large-area electronics. We report on soluble acene-based organic thin film transistors (OTFTs) where the microstructure of as-cast films can be precisely controlled via interfacial chemistry. Chemically tailoring the source/drain contact interface is a novel route to self-patterning of soluble small molecule organic semiconductors and enables the growth of highly ordered regions along opposing contact edges which extend into the transistor channel. The unique film forming properties of soluble fluorinated anthradithiophenes allows us to fabricate high performance OTFTs, OTFT circuits, and to deterministically study the influence of the film microstructure on the electrical characteristics of devices. Most recently we have grown single crystals of soluble fluorinated anthradithiophenes by vapor transport method allowing us to probe deeper into their intrinsic properties and determine the potential and limitations of this promising family of oligomers for use in organic-based electronic devices. Co-Authors: O. D. Jurchescu^1,4, B. H. Hamadani^1, S. K. Park^4, D. A. Mourey^4, S. Subramanian^5, A. J. Moad^2, R. J. Kline^3, L. C. Teague^2, J. G. Kushmerick^2, L. J. Richter^2, T. N. Jackson^4, and J. E. Anthony^5 ^1Semiconductor Electronics Division, ^2Surface and Microanalysis Science Division, ^3Polymers Division, National Institute of Standards and Technology, Gaithersburg, MD 20899 ^4Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802 ^5Department of Chemistry, University of Kentucky, Lexington, KY 40506-0055

  14. High-Performance Bipropellant Engine

    NASA Technical Reports Server (NTRS)

    Biaglow, James A.; Schneider, Steven J.

    1999-01-01

    TRW, under contract to the NASA Lewis Research Center, has successfully completed over 10 000 sec of testing of a rhenium thrust chamber manufactured via a new-generation powder metallurgy. High performance was achieved for two different propellants, N2O4- N2H4 and N2O4 -MMH. TRW conducted 44 tests with N2O4-N2H4, accumulating 5230 sec of operating time with maximum burn times of 600 sec and a specific impulse Isp of 333 sec. Seventeen tests were conducted with N2O4-MMH for an additional 4789 sec and a maximum Isp of 324 sec, with a maximum firing duration of 700 sec. Together, the 61 tests totalled 10 019 sec of operating time, with the chamber remaining in excellent condition. Of these tests, 11 lasted 600 to 700 sec. The performance of radiation-cooled rocket engines is limited by their operating temperature. For the past two to three decades, the majority of radiation-cooled rockets were composed of a high-temperature niobium alloy (C103) with a disilicide oxide coating (R512) for oxidation resistance. The R512 coating practically limits the operating temperature to 1370 C. For the Earth-storable bipropellants commonly used in satellite and spacecraft propulsion systems, a significant amount of fuel film cooling is needed. The large film-cooling requirement extracts a large penalty in performance from incomplete mixing and combustion. A material system with a higher temperature capability has been matured to the point where engines are being readied for flight, particularly the 100-lb-thrust class engine. This system has powder rhenium (Re) as a substrate material with an iridium (Ir) oxidation-resistant coating. Again, the operating temperature is limited by the coating; however, Ir is capable of long-life operation at 2200 C. For Earth-storable bipropellants, this allows for the virtual elimination of fuel film cooling (some film cooling is used for thermal control of the head end). This has resulted in significant increases in specific impulse performance

  15. Polycrystalline thin-film solar cells and modules

    SciTech Connect

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  16. Polycrystalline thin-film solar cells and modules

    SciTech Connect

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  17. Selective and low temperature synthesis of polycrystalline diamond

    NASA Technical Reports Server (NTRS)

    Ramesham, R.; Roppel, T.; Ellis, C.; Baugh, W.; Jaworske, D. A.

    1991-01-01

    Polycrystalline diamond thin films have been deposited on single-crystal silicon substrates at low temperatures (not above 600 C) using a mixture of hydrogen and methane gases by high-pressure microwave plasma-assisted chemical vapor deposition. Low-temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

  18. Polycrystalline Diamond Schottky Diodes and Their Applications.

    NASA Astrophysics Data System (ADS)

    Zhao, Ganming

    In this work, four-hot-filament CVD techniques for in situ boron doped diamond synthesis on silicon substrates were extensively studied. A novel tungsten filament shape and arrangement used to obtain large-area, uniform, boron doped polycrystalline diamond thin films. Both the experimental results and radiative heat transfer analysis showed that this technique improved the uniformity of the substrate temperature. XRD, Raman and SEM studies indicate that large area, uniform, high quality polycrystalline diamond films were obtained. Schottky diodes were fabricated by either sputter deposition of silver or thermal evaporation of aluminum or gold, on boron doped diamond thin films. High forward current density and a high forward-to-reverse current ratio were exhibited by silver on diamond Schottky diodes. Schottky barrier heights and the majority carrier concentrations of both aluminum and gold contacted diodes were determined from the C-V measurements. Furthermore, a novel theoretical C-V-f analysis of deep level boron doped diamond Schottky diodes was performed. The analytical results agree well with the experimental results. Compressive stress was found to have a large effect on the forward biased I-V characteristics of the diamond Schottky diodes, whereas the effect on the reverse biased characteristics was relatively small. The stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. This result shows that CVD diamond device has potential for mechanical transducer applications. The quantitative photoresponse characteristics of the diodes were studied in the spectral range of 300 -1050 nm. Semi-transparent gold contacts were used for better photoresponse. Quantum efficiency as high as 50% was obtained at 500 nm, when a reverse bias of over 1 volt was applied. The Schottky barrier heights between either gold or

  19. Carpet Aids Learning in High Performance Schools

    ERIC Educational Resources Information Center

    Hurd, Frank

    2009-01-01

    The Healthy and High Performance Schools Act of 2002 has set specific federal guidelines for school design, and developed a federal/state partnership program to assist local districts in their school planning. According to the Collaborative for High Performance Schools (CHPS), high-performance schools are, among other things, healthy, comfortable,…

  20. High-Performance Schools Make Cents.

    ERIC Educational Resources Information Center

    Nielsen-Palacios, Christian

    2003-01-01

    Describes the educational benefits of high-performance schools, buildings that are efficient, healthy, safe, and easy to operate and maintain. Also briefly describes how to create a high-performance school drawn from volume I (Planning) of the three-volume Collaborative for High Performance Schools (CHPS) "Best Practices Manual." (For more…

  1. Silicon on ceramic process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

    NASA Technical Reports Server (NTRS)

    Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Butter, C. D.; Schuldt, S. B.

    1977-01-01

    The technical and economic feasibility of producing solar-cell-quality sheet silicon was investigated. The sheets were made by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress was made in all areas of the program.

  2. Flexible nanoscale high-performance FinFETs.

    PubMed

    Torres Sevilla, Galo A; Ghoneim, Mohamed T; Fahad, Hossain; Rojas, Jhonathan P; Hussain, Aftab M; Hussain, Muhammad Mustafa

    2014-10-28

    With the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) based nanoscale FinFET into flexible FinFET and then conduct comprehensive electrical characterization under various bending conditions to understand its electrical performance. Our study shows that back-etch based substrate thinning process is gentler than traditional abrasive back-grinding process; it can attain ultraflexibility and the electrical characteristics of the flexible nanoscale FinFET show no performance degradation compared to its rigid bulk counterpart indicating its readiness to be used for flexible high-performance electronics. PMID:25185112

  3. Coated Porous Si for High Performance On-Chip Supercapacitors

    NASA Astrophysics Data System (ADS)

    Grigoras, K.; Keskinen, J.; Grönberg, L.; Ahopelto, J.; Prunnila, M.

    2014-11-01

    High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

  4. Plastic flow of polycrystalline materials

    NASA Astrophysics Data System (ADS)

    Langer, James

    Leo Kadanoff had a long interest in fluid flows, especially fingering instabilities. This interest was one example of his insatiable curiosity about simple, fundamentally important, and often multidisciplinary phenomena. Here is an example of another class of such phenomena that I had hoped to show him this year. The experts in polycrystalline solid mechanics have insisted for decades that their central problem - dislocation-mediated strain hardening - is intrinsically unsolvable. I think they're wrong. My colleagues and I have made progress recently in theories of both amorphous and polycrystalline plasticity by introducing an effective disorder temperature as a dynamical variable in our equations of motion. In this way, we have been able to describe how the densities of flow defects or dislocations evolve in response to external forcing, and thus to develop theories that promise to become as predictive, and full of surprises, as the laws of fluid flow. For Kadanoff session.

  5. High performance computing and communications program

    NASA Technical Reports Server (NTRS)

    Holcomb, Lee

    1992-01-01

    A review of the High Performance Computing and Communications (HPCC) program is provided in vugraph format. The goals and objectives of this federal program are as follows: extend U.S. leadership in high performance computing and computer communications; disseminate the technologies to speed innovation and to serve national goals; and spur gains in industrial competitiveness by making high performance computing integral to design and production.

  6. Statistical properties of high performance cesium standards

    NASA Technical Reports Server (NTRS)

    Percival, D. B.

    1973-01-01

    The intermediate term frequency stability of a group of new high-performance cesium beam tubes at the U.S. Naval Observatory were analyzed from two viewpoints: (1) by comparison of the high-performance standards to the MEAN(USNO) time scale and (2) by intercomparisons among the standards themselves. For sampling times up to 5 days, the frequency stability of the high-performance units shows significant improvement over older commercial cesium beam standards.

  7. Method of making a high performance ultracapacitor

    SciTech Connect

    Farahmandi, C.J.; Dispennette, J.M.

    2000-05-09

    A high performance double layer capacitor having an electric double layer formed in the interface between activated carbon and an electrolyte is disclosed. The high performance double layer capacitor includes a pair of aluminum impregnated carbon composite electrodes having an evenly distributed and continuous path of aluminum impregnated within an activated carbon fiber preform saturated with a high performance electrolytic solution. The high performance double layer capacitor is capable of delivering at least 5 Wh/kg of useful energy at power ratings of at least 600 W/kg.

  8. Method of making a high performance ultracapacitor

    DOEpatents

    Farahmandi, C. Joseph; Dispennette, John M.

    2000-07-26

    A high performance double layer capacitor having an electric double layer formed in the interface between activated carbon and an electrolyte is disclosed. The high performance double layer capacitor includes a pair of aluminum impregnated carbon composite electrodes having an evenly distributed and continuous path of aluminum impregnated within an activated carbon fiber preform saturated with a high performance electrolytic solution. The high performance double layer capacitor is capable of delivering at least 5 Wh/kg of useful energy at power ratings of at least 600 W/kg.

  9. High performance carbon nanocomposites for ultracapacitors

    DOEpatents

    Lu, Wen

    2012-10-02

    The present invention relates to composite electrodes for electrochemical devices, particularly to carbon nanotube composite electrodes for high performance electrochemical devices, such as ultracapacitors.

  10. High temperature adsorption of nitrogen on a polycrystalline nickel surface

    NASA Astrophysics Data System (ADS)

    Boughaba, S.; Auvert, G.

    1994-01-01

    Nickel tetracarbonyl [Ni(CO)4] molecules were used as a probe to investigate the coverage of a heated polycrystalline nickel surface with nitrogen adspecies. For this purpose, the deposition kinetics of nickel (Ni) microstructures from the thermal decomposition of nickel tetracarbonyl was investigated as a function of the partial pressure of nitrogen (N2), used as buffer gas. The laser-induced chemical vapor deposition technique was used to produce polycrystalline nickel lines in an atmosphere of pure Ni(CO)4 or a [Ni(CO)4+N2] mixture. The deposition process was performed on polysilicon/silicon dioxide/<100> monosilicon substrates. As a heat source, a cw argon-ion laser was used. The laser-induced surface temperature was varied in the range 500-850 °C. For Ni(CO)4 partial pressures typically below 0.3 mbar, the nickel deposition rate was found to decrease as the N2 partial pressure increases. For higher Ni(CO)4 partial pressures, the deposition rate was found to be independent of the N2 partial pressure. On the basis of these results, the high temperature adsorption of nitrogen on a polycrystalline nickel surface was investigated. A model which accounts for the dependence of the nickel deposition rate and surface coverage with nitrogen adspecies on the N2 partial pressure was elaborated.

  11. Common Factors of High Performance Teams

    ERIC Educational Resources Information Center

    Jackson, Bruce; Madsen, Susan R.

    2005-01-01

    Utilization of work teams is now wide spread in all types of organizations throughout the world. However, an understanding of the important factors common to high performance teams is rare. The purpose of this content analysis is to explore the literature and propose findings related to high performance teams. These include definition and types,…

  12. High Performance Work Systems and Firm Performance.

    ERIC Educational Resources Information Center

    Kling, Jeffrey

    1995-01-01

    A review of 17 studies of high-performance work systems concludes that benefits of employee involvement, skill training, and other high-performance work practices tend to be greater when new methods are adopted as part of a consistent whole. (Author)

  13. Sustaining High Performance in Bad Times.

    ERIC Educational Resources Information Center

    Bassi, Laurie J.; Van Buren, Mark A.

    1997-01-01

    Summarizes the results of the American Society for Training and Development Human Resource and Performance Management Survey of 1996 that examined the performance outcomes of downsizing and high performance work systems, explored the relationship between high performance work systems and downsizing, and asked whether some downsizing practices were…

  14. High Performance Work Practices and Firm Performance.

    ERIC Educational Resources Information Center

    Department of Labor, Washington, DC. Office of the American Workplace.

    A literature survey established that a substantial amount of research has been conducted on the relationship between productivity and the following specific high performance work practices: employee involvement in decision making, compensation linked to firm or worker performance, and training. According to these studies, high performance work…

  15. An Associate Degree in High Performance Manufacturing.

    ERIC Educational Resources Information Center

    Packer, Arnold

    In order for more individuals to enter higher paying jobs, employers must create a sufficient number of high-performance positions (the demand side), and workers must acquire the skills needed to perform in these restructured workplaces (the supply side). Creating an associate degree in High Performance Manufacturing (HPM) will help address four…

  16. Polycrystalline thin-film technology: Recent progress in photovoltaics

    SciTech Connect

    Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

    1991-12-01

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe{sub 2}), cadmium telluride (CdTe), and thin-film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin-film CuInSe{sub 2}, has made some rapid advances in terms of high efficiency and long-term reliability. For CuInSe{sub 2} power modules, a world record has been reported on a 0.4-m{sup 2} module with an aperture-area efficiency of 10.4% and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe{sub 2} modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 cm{sup 2}. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10%; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  17. Polycrystalline thin-film technology: Recent progress in photovoltaics

    NASA Astrophysics Data System (ADS)

    Mitchell, R. L.; Zweibel, K.; Ullal, H. S.

    1991-12-01

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe2), cadmium telluride (CdTe), and thin film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin film CuInSe2, has made some rapid advances in terms of high efficiency and long term reliability. For CuInSe2 power modules, a world record has been reported on a 0.4 sq m module with an aperture-area efficiency of 10.4 pct. and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe2 modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 sq cm. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10 pct.; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  18. New high performance Si for optical devices

    NASA Astrophysics Data System (ADS)

    Tenma, T.; Matsuzaka, M.; Sako, R.; Takase, K.; Chiba, K.

    2016-05-01

    Against the backdrop of a growing demand in the areas of smart buildings, security, vehicle installation, and other applications, the market for far infrared cameras is expected to grow significantly in the future. However, since germanium (Ge) and chalcogenide glass, which have been used as the lens materials of far infrared cameras, are very expensive or highly toxic, there are some problems supporting the growing demand. We have therefore focused attention on silicon, which is inexpensive and less toxic. Although silicon has been used as a lens material of far infrared cameras, there are some problems remaining to be solved: Cz silicon is inexpensive but delivers low transmittance, and Fz silicon delivers sufficient transmittance but is expensive. We have developed New Cz silicon, which delivers high transmittance as Fz silicon does, and is inexpensive as conventional Cz silicon is. We have already started its sample work at both companies in Japan and overseas and have obtained excellent performance results. Mass production is scheduled to start in this fiscal year.

  19. Can We Build a Truly High Performance Computer Which is Flexible and Transparent?

    PubMed Central

    Rojas, Jhonathan P.; Torres Sevilla, Galo A.; Hussain, Muhammad M.

    2013-01-01

    State-of-the art computers need high performance transistors, which consume ultra-low power resulting in longer battery lifetime. Billions of transistors are integrated neatly using matured silicon fabrication process to maintain the performance per cost advantage. In that context, low-cost mono-crystalline bulk silicon (100) based high performance transistors are considered as the heart of today's computers. One limitation is silicon's rigidity and brittleness. Here we show a generic batch process to convert high performance silicon electronics into flexible and semi-transparent one while retaining its performance, process compatibility, integration density and cost. We demonstrate high-k/metal gate stack based p-type metal oxide semiconductor field effect transistors on 4 inch silicon fabric released from bulk silicon (100) wafers with sub-threshold swing of 80 mV dec−1 and on/off ratio of near 104 within 10% device uniformity with a minimum bending radius of 5 mm and an average transmittance of ~7% in the visible spectrum. PMID:24018904

  20. Transmutation doping of silicon solar cells

    NASA Technical Reports Server (NTRS)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  1. Strategy Guideline: High Performance Residential Lighting

    SciTech Connect

    Holton, J.

    2012-02-01

    The Strategy Guideline: High Performance Residential Lighting has been developed to provide a tool for the understanding and application of high performance lighting in the home. The high performance lighting strategies featured in this guide are drawn from recent advances in commercial lighting for application to typical spaces found in residential buildings. This guide offers strategies to greatly reduce lighting energy use through the application of high quality fluorescent and light emitting diode (LED) technologies. It is important to note that these strategies not only save energy in the home but also serve to satisfy the homeowner's expectations for high quality lighting.

  2. Special Issue: The Silicon Age

    NASA Astrophysics Data System (ADS)

    Kittler, Martin; Yang, Deren

    2006-03-01

    The present issue of physica status solidi (a) contains a collection of articles about different aspects of current silicon research and applications, ranging from basic investigations of mono- and polycrystalline silicon materials and nanostructures to technologies for device fabrication in silicon photovoltaics, micro- and optoelectronics. Guest Editors are Martin Kittler and Deren Yang, the organizers of a recent Sino-German symposium held in Cottbus, Germany, 19-24 September 2005.The cover picture shows four examples of The Silicon Age: the structure of a thin film solar cell on low-cost SSP (silicon sheet from powder) substrate (upper left image) [1], a high-resolution transmission electron microscopy image and diffraction pattern of a single-crystalline Si nanowire (upper right) [2], a carrier lifetime map from an n-type multicrystalline silicon wafer after gettering by a grain boundary (lower left) [3], and a scanning acoustic microscopy image of a bonded 150 mm diameter wafer pair (upper right) [4].

  3. High-performance computing — an overview

    NASA Astrophysics Data System (ADS)

    Marksteiner, Peter

    1996-08-01

    An overview of high-performance computing (HPC) is given. Different types of computer architectures used in HPC are discussed: vector supercomputers, high-performance RISC processors, various parallel computers like symmetric multiprocessors, workstation clusters, massively parallel processors. Software tools and programming techniques used in HPC are reviewed: vectorizing compilers, optimization and vector tuning, optimization for RISC processors; parallel programming techniques like shared-memory parallelism, message passing and data parallelism; and numerical libraries.

  4. Morphology of polycrystalline cassiterite films

    NASA Astrophysics Data System (ADS)

    Tomaev, V. V.; Glazov, A. I.

    2014-09-01

    Polycrystalline cassiterite films have been grown by the hydropyrolytic method from a 10(H2O) + 5(SnCl2 · 2H2O) solution (in weight fractions) on corundum substrates. The crystallization regularities are considered and a comparative analysis of the properties of natural and artificial cassiterite crystals is performed. The surface morphology is investigated and the size of crystalline grains is determined by scanning electron microscopy. X-ray microprobe analysis showed that all films contain tin and oxygen atoms in a ratio corresponding (within the experimental error) to the chemical formula of tin dioxide. It is established that the surface morphology of cassiterite films is characterized by both single crystallites and aggregates of two or more crystals typical of twins. It is suggest that doping can efficiently be used to control the concentration of twins and the stability of their formation.

  5. Saturation magnetization of polycrystalline iron

    NASA Technical Reports Server (NTRS)

    Behrendt, D. R.; Hegland, D. E.

    1972-01-01

    The magnetic moment per gram, sigma (H sub I, T), where H sub I is the internal field and T is the temperature, was measured for a polycrystalline iron sphere with the vibrating-sample magnetometer. The instrument was calibrated by using a method utilizing the high permeability of an iron sphere. The spontaneous moment, sigma(0, T),was obtained from plots of sigma(H sub I, T) as a function of H sub I for temperatures from 4.2 K to room temperature. The value of the spontaneous moment, sigma(0, T), at 298.9 K was 217.5 + or -0.4 emu/g. The extrapolated moment, sigma(0, 0),at absolute zero from a plot of sigma(0, T) as a function of T to 3/2 power was 221.7 + or - 0.4 emu/g.

  6. High performance bio-integrated devices

    NASA Astrophysics Data System (ADS)

    Kim, Dae-Hyeong; Lee, Jongha; Park, Minjoon

    2014-06-01

    In recent years, personalized electronics for medical applications, particularly, have attracted much attention with the rise of smartphones because the coupling of such devices and smartphones enables the continuous health-monitoring in patients' daily life. Especially, it is expected that the high performance biomedical electronics integrated with the human body can open new opportunities in the ubiquitous healthcare. However, the mechanical and geometrical constraints inherent in all standard forms of high performance rigid wafer-based electronics raise unique integration challenges with biotic entities. Here, we describe materials and design constructs for high performance skin-mountable bio-integrated electronic devices, which incorporate arrays of single crystalline inorganic nanomembranes. The resulting electronic devices include flexible and stretchable electrophysiology electrodes and sensors coupled with active electronic components. These advances in bio-integrated systems create new directions in the personalized health monitoring and/or human-machine interfaces.

  7. Strategy Guideline. Partnering for High Performance Homes

    SciTech Connect

    Prahl, Duncan

    2013-01-01

    High performance houses require a high degree of coordination and have significant interdependencies between various systems in order to perform properly, meet customer expectations, and minimize risks for the builder. Responsibility for the key performance attributes is shared across the project team and can be well coordinated through advanced partnering strategies. For high performance homes, traditional partnerships need to be matured to the next level and be expanded to all members of the project team including trades, suppliers, manufacturers, HERS raters, designers, architects, and building officials as appropriate. This guide is intended for use by all parties associated in the design and construction of high performance homes. It serves as a starting point and features initial tools and resources for teams to collaborate to continually improve the energy efficiency and durability of new houses.

  8. Dinosaurs can fly -- High performance refining

    SciTech Connect

    Treat, J.E.

    1995-09-01

    High performance refining requires that one develop a winning strategy based on a clear understanding of one`s position in one`s company`s value chain; one`s competitive position in the products markets one serves; and the most likely drivers and direction of future market forces. The author discussed all three points, then described measuring performance of the company. To become a true high performance refiner often involves redesigning the organization as well as the business processes. The author discusses such redesigning. The paper summarizes ten rules to follow to achieve high performance: listen to the market; optimize; organize around asset or area teams; trust the operators; stay flexible; source strategically; all maintenance is not equal; energy is not free; build project discipline; and measure and reward performance. The paper then discusses the constraints to the implementation of change.

  9. Integrated Ring Oscillators based on high-performance Graphene Inverters

    PubMed Central

    Schall, Daniel; Otto, Martin; Neumaier, Daniel; Kurz, Heinrich

    2013-01-01

    The road to the realization of complex integrated circuits based on graphene remains an open issue so far. Current graphene based integrated circuits are limited by low integration depth and significant doping variations, representing major road blocks for the success of graphene in future electronic devices. Here we report on the realization of graphene based integrated inverters and ring oscillators. By using an optimized process technology for high-performance graphene transistors with local back-gate electrodes we demonstrate that complex graphene based integrated circuits can be manufactured reproducibly, circumventing problems associated with doping variations. The fabrication process developed here is scalable and fully compatible with conventional silicon technology. Therefore, our results pave the way towards applications based on graphene transistors in future electronic devices. PMID:24005257

  10. High performance Ge-on-Si avalanche photodetector

    NASA Astrophysics Data System (ADS)

    Jang, Ki-Seok; Kim, Sanghoon; Kim, In Gyoo; Oh, Jin Hyuk; Kim, Sun Ae; Joo, Jiho; Kim, Gyungock

    2016-03-01

    We present high performance vertical-illumination type Ge-on-Si avalanche photodetectors and photoreceiver modules operating up to 25 Gb/s. The Ge avalanche photodetectors were grown on a bulk-silicon wafer by RPCVD, and fabricated with CMOS-compatible process. The fabricated devices show a -3dB bandwidth greater than 13 GHz at operational biases (gain> 20) for λ ~ 1550 nm. The measured maximum gain-bandwidth (GB) product is ~ 493 GHz. Two types of Ge-on-Si APD receiver modules exhibit high sensitivities of better than -20.7 dBm for a 25 Gb/s operation at a BER = 10-12 and λ ~ 1310 nm, and -27.75 dBm for a 10 Gb/s operation at a BER = 10-12 and λ ~ 1550nm, respectively.

  11. High performance computing at Sandia National Labs

    SciTech Connect

    Cahoon, R.M.; Noe, J.P.; Vandevender, W.H.

    1995-10-01

    Sandia`s High Performance Computing Environment requires a hierarchy of resources ranging from desktop, to department, to centralized, and finally to very high-end corporate resources capable of teraflop performance linked via high-capacity Asynchronous Transfer Mode (ATM) networks. The mission of the Scientific Computing Systems Department is to provide the support infrastructure for an integrated corporate scientific computing environment that will meet Sandia`s needs in high-performance and midrange computing, network storage, operational support tools, and systems management. This paper describes current efforts at SNL/NM to expand and modernize centralized computing resources in support of this mission.

  12. High Performance Computing and Communications Panel Report.

    ERIC Educational Resources Information Center

    President's Council of Advisors on Science and Technology, Washington, DC.

    This report offers advice on the strengths and weaknesses of the High Performance Computing and Communications (HPCC) initiative, one of five presidential initiatives launched in 1992 and coordinated by the Federal Coordinating Council for Science, Engineering, and Technology. The HPCC program has the following objectives: (1) to extend U.S.…

  13. High Performance Builder Spotlight: Imagine Homes

    SciTech Connect

    2011-01-01

    Imagine Homes, working with the DOE's Building America research team member IBACOS, has developed a system that can be replicated by other contractors to build affordable, high-performance homes. Imagine Homes has used the system to produce more than 70 Builders Challenge-certified homes per year in San Antonio over the past five years.

  14. Co-design for high performance computing.

    SciTech Connect

    Dosanjh, Sudip Singh; Hemmert, Karl Scott; Rodrigues, Arun F.

    2010-07-01

    Co-design has been identified as a key strategy for achieving Exascale computing in this decade. This paper describes the need for co-design in High Performance Computing related research in embedded computing the development of hardware/software co-simulation methods.

  15. High Poverty, High Performing Schools. IDRA Focus.

    ERIC Educational Resources Information Center

    IDRA Newsletter, 1997

    1997-01-01

    This theme issue includes four articles on high performance by poor Texas schools. In "Principal of National Blue Ribbon School Says High Poverty Schools Can Excel" (interview with Robert Zarate by Christie L. Goodman), the principal of Mary Hull Elementary School (San Antonio, Texas) describes how the high-poverty, high-minority school…

  16. Overview of high performance aircraft propulsion research

    NASA Technical Reports Server (NTRS)

    Biesiadny, Thomas J.

    1992-01-01

    The overall scope of the NASA Lewis High Performance Aircraft Propulsion Research Program is presented. High performance fighter aircraft of interest include supersonic flights with such capabilities as short take off and vertical landing (STOVL) and/or high maneuverability. The NASA Lewis effort involving STOVL propulsion systems is focused primarily on component-level experimental and analytical research. The high-maneuverability portion of this effort, called the High Alpha Technology Program (HATP), is part of a cooperative program among NASA's Lewis, Langley, Ames, and Dryden facilities. The overall objective of the NASA Inlet Experiments portion of the HATP, which NASA Lewis leads, is to develop and enhance inlet technology that will ensure high performance and stability of the propulsion system during aircraft maneuvers at high angles of attack. To accomplish this objective, both wind-tunnel and flight experiments are used to obtain steady-state and dynamic data, and computational fluid dynamics (CFD) codes are used for analyses. This overview of the High Performance Aircraft Propulsion Research Program includes a sampling of the results obtained thus far and plans for the future.

  17. High Performance Networks for High Impact Science

    SciTech Connect

    Scott, Mary A.; Bair, Raymond A.

    2003-02-13

    This workshop was the first major activity in developing a strategic plan for high-performance networking in the Office of Science. Held August 13 through 15, 2002, it brought together a selection of end users, especially representing the emerging, high-visibility initiatives, and network visionaries to identify opportunities and begin defining the path forward.

  18. Debugging a high performance computing program

    DOEpatents

    Gooding, Thomas M.

    2014-08-19

    Methods, apparatus, and computer program products are disclosed for debugging a high performance computing program by gathering lists of addresses of calling instructions for a plurality of threads of execution of the program, assigning the threads to groups in dependence upon the addresses, and displaying the groups to identify defective threads.

  19. Debugging a high performance computing program

    DOEpatents

    Gooding, Thomas M.

    2013-08-20

    Methods, apparatus, and computer program products are disclosed for debugging a high performance computing program by gathering lists of addresses of calling instructions for a plurality of threads of execution of the program, assigning the threads to groups in dependence upon the addresses, and displaying the groups to identify defective threads.

  20. High Performance Work Organizations. Myths and Realities.

    ERIC Educational Resources Information Center

    Kerka, Sandra

    Organizations are being urged to become "high performance work organizations" (HPWOs) and vocational teachers have begun considering how best to prepare workers for them. Little consensus exists as to what HPWOs are. Several common characteristics of HPWOs have been identified, and two distinct models of HPWOs are emerging in the United States.…

  1. Performance, Performance System, and High Performance System

    ERIC Educational Resources Information Center

    Jang, Hwan Young

    2009-01-01

    This article proposes needed transitions in the field of human performance technology. The following three transitions are discussed: transitioning from training to performance, transitioning from performance to performance system, and transitioning from learning organization to high performance system. A proposed framework that comprises…

  2. Project materials [Commercial High Performance Buildings Project

    SciTech Connect

    2001-01-01

    The Consortium for High Performance Buildings (ChiPB) is an outgrowth of DOE'S Commercial Whole Buildings Roadmapping initiatives. It is a team-driven public/private partnership that seeks to enable and demonstrate the benefit of buildings that are designed, built and operated to be energy efficient, environmentally sustainable, superior quality, and cost effective.

  3. Using LEADS to shift to high performance.

    PubMed

    Fenwick, Shauna; Hagge, Erna

    2016-03-01

    Health systems across Canada are tasked to measure results of all their strategic initiatives. Included in most strategic plans is leadership development. How to measure leadership effectiveness in relation to organizational objectives is key in determining organizational effectiveness. The following findings offer considerations for a 21(st)-century approach to shifting to high-performance systems. PMID:26872796

  4. Commercial Buildings High Performance Rooftop Unit Challenge

    SciTech Connect

    2011-12-16

    The U.S. Department of Energy (DOE) and the Commercial Building Energy Alliances (CBEAs) are releasing a new design specification for high performance rooftop air conditioning units (RTUs). Manufacturers who develop RTUs based on this new specification will find strong interest from the commercial sector due to the energy and financial savings.

  5. High Performance Work Systems for Online Education

    ERIC Educational Resources Information Center

    Contacos-Sawyer, Jonna; Revels, Mark; Ciampa, Mark

    2010-01-01

    The purpose of this paper is to identify the key elements of a High Performance Work System (HPWS) and explore the possibility of implementation in an online institution of higher learning. With the projected rapid growth of the demand for online education and its importance in post-secondary education, providing high quality curriculum, excellent…

  6. High-Performance Planar-Type Photodetector on (100) Facet of MAPbI3 Single Crystal

    NASA Astrophysics Data System (ADS)

    Lian, Zhipeng; Yan, Qingfeng; Lv, Qianrui; Wang, Ying; Liu, Lili; Zhang, Lijing; Pan, Shilie; Li, Qiang; Wang, Liduo; Sun, Jia-Lin

    2015-11-01

    Recently, the discovery of organometallic halide perovskites provides promising routes for fabricating optoelectronic devices with low cost and high performance. Previous experimental studies of MAPbI3 optoelectronic devices, such as photodetectors and solar cells, are normally based on polycrystalline films. In this work, a high-performance planar-type photodetector fabricated on the (100) facet of a MAPbI3 single crystal is proposed. We demonstrate that MAPbI3 photodetector based on single crystal can perform much better than that on polycrystalline-film counterpart. The low trap density of MAPbI3 single crystal accounts for the higher carrier mobility and longer carrier diffusion length, resulted in a significant performance increasement of MAPbI3 photodetector. Compared with similar planar-type photodetectors based on MAPbI3 polycrystalline film, our MAPbI3 single crystal photodetector showed excellent performance with good stability and durability, broader response spectrum to near-infrared region, about 102 times higher responsivity and EQE, and approximately 103 times faster response speed. These results may pave the way for exploiting high-performance perovskites photodetectors based on single crystal.

  7. High-Performance Planar-Type Photodetector on (100) Facet of MAPbI3 Single Crystal

    PubMed Central

    Lian, Zhipeng; Yan, Qingfeng; Lv, Qianrui; Wang, Ying; Liu, Lili; Zhang, Lijing; Pan, Shilie; Li, Qiang; Wang, Liduo; Sun, Jia-Lin

    2015-01-01

    Recently, the discovery of organometallic halide perovskites provides promising routes for fabricating optoelectronic devices with low cost and high performance. Previous experimental studies of MAPbI3 optoelectronic devices, such as photodetectors and solar cells, are normally based on polycrystalline films. In this work, a high-performance planar-type photodetector fabricated on the (100) facet of a MAPbI3 single crystal is proposed. We demonstrate that MAPbI3 photodetector based on single crystal can perform much better than that on polycrystalline-film counterpart. The low trap density of MAPbI3 single crystal accounts for the higher carrier mobility and longer carrier diffusion length, resulted in a significant performance increasement of MAPbI3 photodetector. Compared with similar planar-type photodetectors based on MAPbI3 polycrystalline film, our MAPbI3 single crystal photodetector showed excellent performance with good stability and durability, broader response spectrum to near-infrared region, about 102 times higher responsivity and EQE, and approximately 103 times faster response speed. These results may pave the way for exploiting high-performance perovskites photodetectors based on single crystal. PMID:26563975

  8. Radio Synthesis Imaging - A High Performance Computing and Communications Project

    NASA Astrophysics Data System (ADS)

    Crutcher, Richard M.

    The National Science Foundation has funded a five-year High Performance Computing and Communications project at the National Center for Supercomputing Applications (NCSA) for the direct implementation of several of the computing recommendations of the Astronomy and Astrophysics Survey Committee (the "Bahcall report"). This paper is a summary of the project goals and a progress report. The project will implement a prototype of the next generation of astronomical telescope systems - remotely located telescopes connected by high-speed networks to very high performance, scalable architecture computers and on-line data archives, which are accessed by astronomers over Gbit/sec networks. Specifically, a data link has been installed between the BIMA millimeter-wave synthesis array at Hat Creek, California and NCSA at Urbana, Illinois for real-time transmission of data to NCSA. Data are automatically archived, and may be browsed and retrieved by astronomers using the NCSA Mosaic software. In addition, an on-line digital library of processed images will be established. BIMA data will be processed on a very high performance distributed computing system, with I/O, user interface, and most of the software system running on the NCSA Convex C3880 supercomputer or Silicon Graphics Onyx workstations connected by HiPPI to the high performance, massively parallel Thinking Machines Corporation CM-5. The very computationally intensive algorithms for calibration and imaging of radio synthesis array observations will be optimized for the CM-5 and new algorithms which utilize the massively parallel architecture will be developed. Code running simultaneously on the distributed computers will communicate using the Data Transport Mechanism developed by NCSA. The project will also use the BLANCA Gbit/s testbed network between Urbana and Madison, Wisconsin to connect an Onyx workstation in the University of Wisconsin Astronomy Department to the NCSA CM-5, for development of long

  9. Conductive polycrystalline diamond probes for local anodic oxidation lithography

    NASA Astrophysics Data System (ADS)

    Ulrich, A. J.; Radadia, A. D.

    2015-11-01

    This is the first report characterizing local anodic oxidation (LAO) lithography performed using conductive monolithic polycrystalline diamond (MD) and conductive polycrystalline diamond-coated (DC) tips and comparing it to the diamond-like carbon-coated and metal-coated silicon tips. The range and the rate of increase in the lithographic linewidth and height with tip bias (dw/dV and dh/dV) differed based on the tip material. The DC tips resulted in wider and taller lines and a higher dw/dV and dh/dV compared to metal-coated tips with a similar force constant (k Avg). The metal-coated and the DC tips with comparable k Avg showed comparable threshold voltages, whereas the MD tips with similar k Avg showed a higher threshold voltage. The MD tips exhibited less than half the height and nearly half the dw/dV and dh/dV obtained with the metal-coated tips with similar k Avg, thus also resulting in a smaller width at -10 V. The linewidths were found to be proportional to the inverse of the log of write speed (v) for all the tips; however, the proportionality constant varied with tip material; the DC tips had larger values, and the MD and the metal-coated tips had comparable values. When varying the speed, the height was found to be a sigmoidal function of width, with the MD probes achieving lower height compared to the metal-coated and the DC tips with comparable k Avg. This study expands the application of monolithic conductive polycrystalline diamond (PCD) probes with outstanding wear resistance to fine LAO lithography.

  10. Conductive polycrystalline diamond probes for local anodic oxidation lithography.

    PubMed

    Ulrich, A J; Radadia, A D

    2015-11-20

    This is the first report characterizing local anodic oxidation (LAO) lithography performed using conductive monolithic polycrystalline diamond (MD) and conductive polycrystalline diamond-coated (DC) tips and comparing it to the diamond-like carbon-coated and metal-coated silicon tips. The range and the rate of increase in the lithographic linewidth and height with tip bias (dw/dV and dh/dV) differed based on the tip material. The DC tips resulted in wider and taller lines and a higher dw/dV and dh/dV compared to metal-coated tips with a similar force constant (k(Avg)). The metal-coated and the DC tips with comparable k(Avg) showed comparable threshold voltages, whereas the MD tips with similar k(Avg) showed a higher threshold voltage. The MD tips exhibited less than half the height and nearly half the dw/dV and dh/dV obtained with the metal-coated tips with similar k Avg, thus also resulting in a smaller width at -10 V. The linewidths were found to be proportional to the inverse of the log of write speed(v) for all the tips; however, the proportionality constant varied with tip material; the DC tips had larger values, and the MD and the metal-coated tips had comparable values. When varying the speed, the height was found to be a sigmoidal function of width, with the MD probes achieving lower height compared to the metal-coated and the DC tips with comparable k(Avg). This study expands the application of monolithic conductive polycrystalline diamond (PCD) probes with outstanding wear resistance to fine LAO lithography. PMID:26501841

  11. Theoretical study of the photovoltaic properties of polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    Joshi, D. P.; Srivastava, R. S.

    1986-04-01

    By considering the variation of grain-boundary space-charge potential barrier height with grain size and doping level, the dependence of polysilicon solar cell parameters on the grain size (d) and substrate resistivity have been theoretically investigated. A new relation is presented for the effective diffusion length of minority carriers in polysilicon which predicts that the effective diffusion length is approximately proportional to d exp r, where r varies from 0 to 1. Computations show that as base resistivity decreases, the effect of the grain-boundary recombination process increases, and consequently the polysilicon cell parameters do not vary with resistivity in the same manner as has been observed for a single-crystal cell. The proposed theory also predicts the dominance of shunting effects of grain boundary at small grain sizes or low base resistivities. The available experimental data are found to be in good agreement with the predictions of the theory.

  12. Electron microscopy of gallium nitride growth on polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Webster, R. F.; Cherns, D.; Kuball, M.; Jiang, Q.; Allsopp, D.

    2015-11-01

    Transmission and scanning electron microscopy were used to examine the growth of gallium nitride (GaN) on polycrystalline diamond substrates grown by metalorganic vapour phase epitaxy with a low-temperature aluminium nitride (AlN) nucleation layer. Growth on unmasked substrates was in the (0001) orientation with threading dislocation densities ≈7 × 109 cm-2. An epitaxial layer overgrowth technique was used to reduce the dislocation densities further, by depositing silicon nitride stripes on the surface and etching the unmasked regions down to the diamond substrate. A re-growth was then performed on the exposed side walls of the original GaN growth, reducing the threading dislocation density in the overgrown regions by two orders of magnitude. The resulting microstructures and the mechanisms of dislocation reduction are discussed.

  13. A high performance, variable capacitance accelerometer

    NASA Astrophysics Data System (ADS)

    Wilner, L. Bruce

    1988-12-01

    A variable capacitance acceleration sensor is described. Manufactured using silicon microfabrication techniques, the sensor uses a midplane, flat plate suspension, gas damping, and overrange stops. The sensor is assembled from three silicon wafers, using anodic bonds to inlays of borosilicate glass. Typical sensor properties are 7-pF active capacitance, 3-pF tare capacitance, a response of 0.05 pF/G, a resonance frequency of 3.4 kHz, and damping 0.7 critical. It is concluded that this sensor, with appropriate electronics, forms an accelerometer with an order-of-magnitude greater sensitivity-bandwidth product than a comparable piezoresistive acclerometer, and with extraordinary shock resistance.

  14. Creep and stress relaxation modeling of polycrystalline ceramic fibers

    NASA Technical Reports Server (NTRS)

    Dicarlo, James A.; Morscher, Gregory N.

    1994-01-01

    A variety of high performance polycrystalline ceramic fibers are currently being considered as reinforcement for high temperature ceramic matrix composites. However, under mechanical loading about 800 C, these fibers display creep related instabilities which can result in detrimental changes in composite dimensions, strength, and internal stress distributions. As a first step toward understanding these effects, this study examines the validity of a mechanism-based empirical model which describes primary stage tensile creep and stress relaxation of polycrystalline ceramic fibers as independent functions of time, temperature, and applied stress or strain. To verify these functional dependencies, a simple bend test is used to measure stress relaxation for four types of commercial ceramic fibers for which direct tensile creep data are available. These fibers include both nonoxide (SCS-6, Nicalon) and oxide (PRD-166, FP) compositions. The results of the Bend Stress Relaxation (BSR) test not only confirm the stress, time, and temperature dependencies predicted by the model, but also allow measurement of model empirical parameters for the four fiber types. In addition, comparison of model tensile creep predictions based on the BSR test results with the literature data show good agreement, supporting both the predictive capability of the model and the use of the BSR text as a simple method for parameter determination for other fibers.

  15. Creep and stress relaxation modeling of polycrystalline ceramic fibers

    NASA Technical Reports Server (NTRS)

    Dicarlo, James A.; Morscher, Gregory N.

    1991-01-01

    A variety of high performance polycrystalline ceramic fibers are currently being considered as reinforcement for high temperature ceramic matrix composites. However, under mechanical loading above 800 C, these fibers display creep-related instabilities which can result in detrimental changes in composite dimensions, strength, and internal stress distributions. As a first step toward understanding these effects, this study examines the validity of mechanistic-based empirical model which describes primary stage tensile creep and stress relaxation of polycrystalline ceramic fibers as independent functions of time, temperature, and applied stress or strain. To verify these functional dependencies, a simple bend test is used to measure stress relaxation for four types of commercial ceramic fibers for which direct tensile creep data are available. These fibers include both nonoxide (SCS-6, Nicalon) and oxide (PRD-166, FP) compositions. The results of the bend stress relaxation (BSR) test not only confirm the stress, time, and temperature dependencies predicted by the model but also allow measurement of model empirical parameters for the four fiber types. In addition, comparison of model predictions and BSR test results with the literature tensile creep data show good agreement, supporting both the predictive capability of the model and the use of the BSR test as a simple method for parameter determination for other fibers.

  16. High performance compound semiconductor SPAD arrays

    NASA Astrophysics Data System (ADS)

    Harmon, Eric S.; Naydenkov, Mikhail; Bowling, Jared

    2016-05-01

    Aggregated compound semiconductor single photon avalanche diode (SPAD) arrays are emerging as a viable alternative to the silicon photomultiplier (SiPM). Compound semiconductors have the potential to surpass SiPM performance, potentially achieving orders of magnitude lower dark count rates and improved radiation hardness. New planar processing techniques have been developed to enable compound semiconductor SPAD devices to be produced with pixel pitches of 11 - 25 microns, with thousands of SPADs per array.

  17. A reusable mold in directional solidification for silicon solar cells

    NASA Astrophysics Data System (ADS)

    Saito, T.; Shimura, A.; Ichikawa, S.

    1983-12-01

    Directional solidification of silicon was achieved by using a SiC coated carbon mold together with Si3N4 powder mold releasing agent. Crack-free polycrystalline silicon ingots were able to be extracted easily out of the mold. The mold was easily able to withstand more than 12 utilizations. Silicon ingot impurity contents were less than 3 ppm and the average polycrystalline grain diameter was 0.8 mm. Solar cells made of this material gave an AM1 maximum conversion of 10.8 deg.

  18. Composite polycrystalline semiconductor neutron detectors

    NASA Astrophysics Data System (ADS)

    Schieber, M.; Zuck, A.; Marom, G.; Khakhan, O.; Roth, M.; Alfassi, Z. B.

    2007-08-01

    Composite polycrystalline semiconductor detectors bound with different binders, both inorganic molten glasses, such as B 2O 3, PbO/B 2O 3, Bi 2O 3/PbO, and organic polymeric binders, such as isotactic polypropylene (iPP), polystyrene or nylon-6, and coated with different metal electrodes were tested at room temperature for α-particles and very weak thermal neutron sources. The detector materials tested were natural occurring hexagonal BN and cubic LiF, where both are not containing enriched isotopes of 10B or 6Li. The radiation sources were 5.5 MeV α's from 241Am, 5.3 MeV from 210Po and also 4.8 MeV from 226Ra. Some of these detectors were also tested with thermal neutrons from very weak 227Ac 9Be, 241Am- 10Be sources and also from a weak 238Pu+ 9Be and somewhat stronger 252Cf sources. The neutrons were thermalized with paraffin. Despite very low signal to noise ratio of only ˜2, the neutrons could be counted by subtracting the noise from the signal.

  19. Poisson's ratio of high-performance concrete

    SciTech Connect

    Persson, B.

    1999-10-01

    This article outlines an experimental and numerical study on Poisson's ratio of high-performance concrete subjected to air or sealed curing. Eight qualities of concrete (about 100 cylinders and 900 cubes) were studied, both young and in the mature state. The concretes contained between 5 and 10% silica fume, and two concretes in addition contained air-entrainment. Parallel studies of strength and internal relative humidity were carried out. The results indicate that Poisson's ratio of high-performance concrete is slightly smaller than that of normal-strength concrete. Analyses of the influence of maturity, type of aggregate, and moisture on Poisson's ratio are also presented. The project was carried out from 1991 to 1998.

  20. Evaluation of high-performance computing software

    SciTech Connect

    Browne, S.; Dongarra, J.; Rowan, T.

    1996-12-31

    The absence of unbiased and up to date comparative evaluations of high-performance computing software complicates a user`s search for the appropriate software package. The National HPCC Software Exchange (NHSE) is attacking this problem using an approach that includes independent evaluations of software, incorporation of author and user feedback into the evaluations, and Web access to the evaluations. We are applying this approach to the Parallel Tools Library (PTLIB), a new software repository for parallel systems software and tools, and HPC-Netlib, a high performance branch of the Netlib mathematical software repository. Updating the evaluations with feed-back and making it available via the Web helps ensure accuracy and timeliness, and using independent reviewers produces unbiased comparative evaluations difficult to find elsewhere.

  1. Monitoring SLAC High Performance UNIX Computing Systems

    SciTech Connect

    Lettsome, Annette K.; /Bethune-Cookman Coll. /SLAC

    2005-12-15

    Knowledge of the effectiveness and efficiency of computers is important when working with high performance systems. The monitoring of such systems is advantageous in order to foresee possible misfortunes or system failures. Ganglia is a software system designed for high performance computing systems to retrieve specific monitoring information. An alternative storage facility for Ganglia's collected data is needed since its default storage system, the round-robin database (RRD), struggles with data integrity. The creation of a script-driven MySQL database solves this dilemma. This paper describes the process took in the creation and implementation of the MySQL database for use by Ganglia. Comparisons between data storage by both databases are made using gnuplot and Ganglia's real-time graphical user interface.

  2. ADVANCED HIGH PERFORMANCE SOLID WALL BLANKET CONCEPTS

    SciTech Connect

    WONG, CPC; MALANG, S; NISHIO, S; RAFFRAY, R; SAGARA, S

    2002-04-01

    OAK A271 ADVANCED HIGH PERFORMANCE SOLID WALL BLANKET CONCEPTS. First wall and blanket (FW/blanket) design is a crucial element in the performance and acceptance of a fusion power plant. High temperature structural and breeding materials are needed for high thermal performance. A suitable combination of structural design with the selected materials is necessary for D-T fuel sufficiency. Whenever possible, low afterheat, low chemical reactivity and low activation materials are desired to achieve passive safety and minimize the amount of high-level waste. Of course the selected fusion FW/blanket design will have to match the operational scenarios of high performance plasma. The key characteristics of eight advanced high performance FW/blanket concepts are presented in this paper. Design configurations, performance characteristics, unique advantages and issues are summarized. All reviewed designs can satisfy most of the necessary design goals. For further development, in concert with the advancement in plasma control and scrape off layer physics, additional emphasis will be needed in the areas of first wall coating material selection, design of plasma stabilization coils, consideration of reactor startup and transient events. To validate the projected performance of the advanced FW/blanket concepts the critical element is the need for 14 MeV neutron irradiation facilities for the generation of necessary engineering design data and the prediction of FW/blanket components lifetime and availability.

  3. Programming high-performance reconfigurable computers

    NASA Astrophysics Data System (ADS)

    Smith, Melissa C.; Peterson, Gregory D.

    2001-07-01

    High Performance Computers (HPC) provide dramatically improved capabilities for a number of defense and commercial applications, but often are too expensive to acquire and to program. The smaller market and customized nature of HPC architectures combine to increase the cost of most such platforms. To address the problems with high hardware costs, one may create more inexpensive Beowolf clusters of dedicated commodity processors. Despite the benefit of reduced hardware costs, programming the HPC platforms to achieve high performance often proves extremely time-consuming and expensive in practice. In recent years, programming productivity gains come from the development of common APIs and libraries of functions to support distributed applications. Examples include PVM, MPI, BLAS, and VSIPL. The implementation of each API or library is optimized for a given platform, but application developers can write code that is portable across specific HPC architectures. The application of reconfigurable computing (RC) into HPC platforms promises significantly enhanced performance and flexibility at a modest cost. Unfortunately, configuring (programming) the reconfigurable computing nodes remains a challenging task and relatively little work to date has focused on potential high performance reconfigurable computing (HPRC) platforms consisting of reconfigurable nodes paired with processing nodes. This paper addresses the challenge of effectively exploiting HPRC resources by first considering the performance evaluation and optimization problem before turning to improving the programming infrastructure used for porting applications to HPRC platforms.

  4. Computational Biology and High Performance Computing 2000

    SciTech Connect

    Simon, Horst D.; Zorn, Manfred D.; Spengler, Sylvia J.; Shoichet, Brian K.; Stewart, Craig; Dubchak, Inna L.; Arkin, Adam P.

    2000-10-19

    The pace of extraordinary advances in molecular biology has accelerated in the past decade due in large part to discoveries coming from genome projects on human and model organisms. The advances in the genome project so far, happening well ahead of schedule and under budget, have exceeded any dreams by its protagonists, let alone formal expectations. Biologists expect the next phase of the genome project to be even more startling in terms of dramatic breakthroughs in our understanding of human biology, the biology of health and of disease. Only today can biologists begin to envision the necessary experimental, computational and theoretical steps necessary to exploit genome sequence information for its medical impact, its contribution to biotechnology and economic competitiveness, and its ultimate contribution to environmental quality. High performance computing has become one of the critical enabling technologies, which will help to translate this vision of future advances in biology into reality. Biologists are increasingly becoming aware of the potential of high performance computing. The goal of this tutorial is to introduce the exciting new developments in computational biology and genomics to the high performance computing community.

  5. Achieving High Performance Perovskite Solar Cells

    NASA Astrophysics Data System (ADS)

    Yang, Yang

    2015-03-01

    Recently, metal halide perovskite based solar cell with the characteristics of rather low raw materials cost, great potential for simple process and scalable production, and extreme high power conversion efficiency (PCE), have been highlighted as one of the most competitive technologies for next generation thin film photovoltaic (PV). In UCLA, we have realized an efficient pathway to achieve high performance pervoskite solar cells, where the findings are beneficial to this unique materials/devices system. Our recent progress lies in perovskite film formation, defect passivation, transport materials design, interface engineering with respect to high performance solar cell, as well as the exploration of its applications beyond photovoltaics. These achievements include: 1) development of vapor assisted solution process (VASP) and moisture assisted solution process, which produces perovskite film with improved conformity, high crystallinity, reduced recombination rate, and the resulting high performance; 2) examination of the defects property of perovskite materials, and demonstration of a self-induced passivation approach to reduce carrier recombination; 3) interface engineering based on design of the carrier transport materials and the electrodes, in combination with high quality perovskite film, which delivers 15 ~ 20% PCEs; 4) a novel integration of bulk heterojunction to perovskite solar cell to achieve better light harvest; 5) fabrication of inverted solar cell device with high efficiency and flexibility and 6) exploration the application of perovskite materials to photodetector. Further development in film, device architecture, and interfaces will lead to continuous improved perovskite solar cells and other organic-inorganic hybrid optoelectronics.

  6. High purity silane and silicon production

    NASA Technical Reports Server (NTRS)

    Breneman, William C. (Inventor)

    1987-01-01

    Silicon tetrachloride, hydrogen and metallurgical silicon are reacted at about 400.degree.-600.degree. C. and at pressures in excess of 100 psi, and specifically from about 300 up to about 600 psi to form di- and trichlorosilane that is subjected to disproportionation in the presence of an anion exchange resin to form high purity silane. By-product and unreacted materials are recycled, with metallurgical silicon and hydrogen being essentially the only consumed feed materials. The silane product may be further purified, as by means of activated carbon or cryogenic distillation, and decomposed in a fluid bed or free space reactor to form high purity polycrystalline silicon and by-product hydrogen which can be recycled for further use. The process results in simplified waste disposal operations and enhances the overall conversion of metallurgical grade silicon to silane and high purity silicon for solar cell and semiconductor silicon applications.

  7. Disposal of metal fragments released during polycrystalline slicing by multi-wire saw

    NASA Astrophysics Data System (ADS)

    Boutouchent-Guerfi, N.; Drouiche, N.; Medjahed, S.; Ould-Hamou, M.; Sahraoui, F.

    2016-08-01

    The environmental and economic impacts linked with solar systems are largely based on discharges of slurry generated during the various stages of sawing and cutting ingots. These discharges into the environment are subject to the general regulations on hazardous and special industrial waste disposal. Therefore, they should not be abandoned or burned in open air. The cutting of Silicon ingots leads to the production of Silicon wafers additional costs, losing more than 30% of Silicon material. Abrasive grains (Silicon Carbide) trapped between the wire and the block of Silicon need to be removed by various mechanisms to be later evacuated by slurry fragments. In the interest of decreasing operational costs during polycrystalline ingot slicing at Semiconductors Research Center, and, avoid environmental problems; it is necessary to recover the solar grade Silicon from the Silicon sawing waste. For this reason, the removal of metal fragments has become a preliminary requirement to regenerate the slurry; in addition, the solid phase needs to be separated from the liquid phase after the dissolution PEG with the solvent. In the present study, magnetic separation and centrifugation methods were adopted for metals removal, followed by the analysis of some operating parameters such as: washing time, pH, and initial concentration of Silicon. Finally, analytical, morphological and basic methods were performed in order to evaluate the efficiency of the process undertaken.

  8. Silicon Solar Cell Fabrication Technology

    NASA Technical Reports Server (NTRS)

    Stafsudd, O. M.

    1980-01-01

    Device fabrication and photoconductive lifetime decay measurements were used to characterize single and polycrystalline silicon substracts. The device characterization of the processed materials was done by spectral response measurements and absolute quantum efficiency at a single wavelength. The results were then reduced to yield the diffusion length of the various samples. The photoconductive lifetime decay method was implemented in order to determine the minority carrier lifetime in unprocessed wafers.

  9. Failure analysis of high performance ballistic fibers

    NASA Astrophysics Data System (ADS)

    Spatola, Jennifer S.

    High performance fibers have a high tensile strength and modulus, good wear resistance, and a low density, making them ideal for applications in ballistic impact resistance, such as body armor. However, the observed ballistic performance of these fibers is much lower than the predicted values. Since the predictions assume only tensile stress failure, it is safe to assume that the stress state is affecting fiber performance. The purpose of this research was to determine if there are failure mode changes in the fiber fracture when transversely loaded by indenters of different shapes. An experimental design mimicking transverse impact was used to determine any such effects. Three different indenters were used: round, FSP, and razor blade. The indenter height was changed to change the angle of failure tested. Five high performance fibers were examined: KevlarRTM KM2, SpectraRTM 130d, DyneemaRTM SK-62 and SK-76, and ZylonRTM 555. Failed fibers were analyzed using an SEM to determine failure mechanisms. The results show that the round and razor blade indenters produced a constant failure strain, as well as failure mechanisms independent of testing angle. The FSP indenter produced a decrease in failure strain as the angle increased. Fibrillation was the dominant failure mechanism at all angles for the round indenter, while through thickness shearing was the failure mechanism for the razor blade. The FSP indenter showed a transition from fibrillation at low angles to through thickness shearing at high angles, indicating that the round and razor blade indenters are extreme cases of the FSP indenter. The failure mechanisms observed with the FSP indenter at various angles correlated with the experimental strain data obtained during fiber testing. This indicates that geometry of the indenter tip in compression is a contributing factor in lowering the failure strain of the high performance fibers. TEM analysis of the fiber failure mechanisms was also attempted, though without

  10. Toward a theory of high performance.

    PubMed

    Kirby, Julia

    2005-01-01

    What does it mean to be a high-performance company? The process of measuring relative performance across industries and eras, declaring top performers, and finding the common drivers of their success is such a difficult one that it might seem a fool's errand to attempt. In fact, no one did for the first thousand or so years of business history. The question didn't even occur to many scholars until Tom Peters and Bob Waterman released In Search of Excellence in 1982. Twenty-three years later, we've witnessed several more attempts--and, just maybe, we're getting closer to answers. In this reported piece, HBR senior editor Julia Kirby explores why it's so difficult to study high performance and how various research efforts--including those from John Kotter and Jim Heskett; Jim Collins and Jerry Porras; Bill Joyce, Nitin Nohria, and Bruce Roberson; and several others outlined in a summary chart-have attacked the problem. The challenge starts with deciding which companies to study closely. Are the stars the ones with the highest market caps, the ones with the greatest sales growth, or simply the ones that remain standing at the end of the game? (And when's the end of the game?) Each major study differs in how it defines success, which companies it therefore declares to be worthy of emulation, and the patterns of activity and attitude it finds in common among them. Yet, Kirby concludes, as each study's method incrementally solves problems others have faced, we are progressing toward a consensus theory of high performance. PMID:16028814

  11. Strategy Guideline. High Performance Residential Lighting

    SciTech Connect

    Holton, J.

    2012-02-01

    This report has been developed to provide a tool for the understanding and application of high performance lighting in the home. The strategies featured in this guide are drawn from recent advances in commercial lighting for application to typical spaces found in residential buildings. This guide offers strategies to greatly reduce lighting energy use through the application of high quality fluorescent and light emitting diode (LED) technologies. It is important to note that these strategies not only save energy in the home but also serve to satisfy the homeowner’s expectations for high quality lighting.

  12. High performance forward swept wing aircraft

    NASA Technical Reports Server (NTRS)

    Koenig, David G. (Inventor); Aoyagi, Kiyoshi (Inventor); Dudley, Michael R. (Inventor); Schmidt, Susan B. (Inventor)

    1988-01-01

    A high performance aircraft capable of subsonic, transonic and supersonic speeds employs a forward swept wing planform and at least one first and second solution ejector located on the inboard section of the wing. A high degree of flow control on the inboard sections of the wing is achieved along with improved maneuverability and control of pitch, roll and yaw. Lift loss is delayed to higher angles of attack than in conventional aircraft. In one embodiment the ejectors may be advantageously positioned spanwise on the wing while the ductwork is kept to a minimum.

  13. High-Performance Water-Iodinating Cartridge

    NASA Technical Reports Server (NTRS)

    Sauer, Richard; Gibbons, Randall E.; Flanagan, David T.

    1993-01-01

    High-performance cartridge contains bed of crystalline iodine iodinates water to near saturation in single pass. Cartridge includes stainless-steel housing equipped with inlet and outlet for water. Bed of iodine crystals divided into layers by polytetrafluoroethylene baffles. Holes made in baffles and positioned to maximize length of flow path through layers of iodine crystals. Resulting concentration of iodine biocidal; suppresses growth of microbes in stored water or disinfects contaminated equipment. Cartridge resists corrosion and can be stored wet. Reused several times before necessary to refill with fresh iodine crystals.

  14. High-performance neural networks. [Neural computers

    SciTech Connect

    Dress, W.B.

    1987-06-01

    The new Forth hardware architectures offer an intermediate solution to high-performance neural networks while the theory and programming details of neural networks for synthetic intelligence are developed. This approach has been used successfully to determine the parameters and run the resulting network for a synthetic insect consisting of a 200-node ''brain'' with 1760 interconnections. Both the insect's environment and its sensor input have thus far been simulated. However, the frequency-coded nature of the Browning network allows easy replacement of the simulated sensors by real-world counterparts.

  15. Climate Modeling using High-Performance Computing

    SciTech Connect

    Mirin, A A

    2007-02-05

    The Center for Applied Scientific Computing (CASC) and the LLNL Climate and Carbon Science Group of Energy and Environment (E and E) are working together to improve predictions of future climate by applying the best available computational methods and computer resources to this problem. Over the last decade, researchers at the Lawrence Livermore National Laboratory (LLNL) have developed a number of climate models that provide state-of-the-art simulations on a wide variety of massively parallel computers. We are now developing and applying a second generation of high-performance climate models. Through the addition of relevant physical processes, we are developing an earth systems modeling capability as well.

  16. An Introduction to High Performance Computing

    NASA Astrophysics Data System (ADS)

    Almeida, Sérgio

    2013-09-01

    High Performance Computing (HPC) has become an essential tool in every researcher's arsenal. Most research problems nowadays can be simulated, clarified or experimentally tested by using computational simulations. Researchers struggle with computational problems when they should be focusing on their research problems. Since most researchers have little-to-no knowledge in low-level computer science, they tend to look at computer programs as extensions of their minds and bodies instead of completely autonomous systems. Since computers do not work the same way as humans, the result is usually Low Performance Computing where HPC would be expected.

  17. High performance pitch-based carbon fiber

    SciTech Connect

    Tadokoro, Hiroyuki; Tsuji, Nobuyuki; Shibata, Hirotaka; Furuyama, Masatoshi

    1996-12-31

    The high performance pitch-based carbon fiber with smaller diameter, six micro in developed by Nippon Graphite Fiber Corporation. This fiber possesses high tensile modulus, high tensile strength, excellent yarn handle ability, low thermal expansion coefficient, and high thermal conductivity which make it an ideal material for space applications such as artificial satellites. Performance of this fiber as a reinforcement of composites was sufficient. With these characteristics, this pitch-based carbon fiber is expected to find wide variety of possible applications in space structures, industrial field, sporting goods and civil infrastructures.

  18. Portability Support for High Performance Computing

    NASA Technical Reports Server (NTRS)

    Cheng, Doreen Y.; Cooper, D. M. (Technical Monitor)

    1994-01-01

    While a large number of tools have been developed to support application portability, high performance application developers often prefer to use vendor-provided, non-portable programming interfaces. This phenomena indicates the mismatch between user priorities and tool capabilities. This paper summarizes the results of a user survey and a developer survey. The user survey has revealed the user priorities and resulted in three criteria for evaluating tool support for portability. The developer survey has resulted in the evaluation of portability support and indicated the possibilities and difficulties of improvements.

  19. High performance channel injection sealant invention abstract

    NASA Technical Reports Server (NTRS)

    Rosser, R. W.; Basiulis, D. I.; Salisbury, D. P. (Inventor)

    1982-01-01

    High performance channel sealant is based on NASA patented cyano and diamidoximine-terminated perfluoroalkylene ether prepolymers that are thermally condensed and cross linked. The sealant contains asbestos and, in its preferred embodiments, Lithofrax, to lower its thermal expansion coefficient and a phenolic metal deactivator. Extensive evaluation shows the sealant is extremely resistant to thermal degradation with an onset point of 280 C. The materials have a volatile content of 0.18%, excellent flexibility, and adherence properties, and fuel resistance. No corrosibility to aluminum or titanium was observed.

  20. Method for producing silicon thin-film transistors with enhanced forward current drive

    DOEpatents

    Weiner, K.H.

    1998-06-30

    A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

  1. Method for producing silicon thin-film transistors with enhanced forward current drive

    DOEpatents

    Weiner, Kurt H.

    1998-01-01

    A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

  2. High performance Si immersion gratings patterned with electron beam lithography

    NASA Astrophysics Data System (ADS)

    Gully-Santiago, Michael A.; Jaffe, Daniel T.; Brooks, Cynthia B.; Wilson, Daniel W.; Muller, Richard E.

    2014-07-01

    Infrared spectrographs employing silicon immersion gratings can be significantly more compact than spectro- graphs using front-surface gratings. The Si gratings can also offer continuous wavelength coverage at high spectral resolution. The grooves in Si gratings are made with semiconductor lithography techniques, to date almost entirely using contact mask photolithography. Planned near-infrared astronomical spectrographs require either finer groove pitches or higher positional accuracy than standard UV contact mask photolithography can reach. A collaboration between the University of Texas at Austin Silicon Diffractive Optics Group and the Jet Propulsion Laboratory Microdevices Laboratory has experimented with direct writing silicon immersion grating grooves with electron beam lithography. The patterning process involves depositing positive e-beam resist on 1 to 30 mm thick, 100 mm diameter monolithic crystalline silicon substrates. We then use the facility JEOL 9300FS e-beam writer at JPL to produce the linear pattern that defines the gratings. There are three key challenges to produce high-performance e-beam written silicon immersion gratings. (1) E- beam field and subfield stitching boundaries cause periodic cross-hatch structures along the grating grooves. The structures manifest themselves as spectral and spatial dimension ghosts in the diffraction limited point spread function (PSF) of the diffraction grating. In this paper, we show that the effects of e-beam field boundaries must be mitigated. We have significantly reduced ghost power with only minor increases in write time by using four or more field sizes of less than 500 μm. (2) The finite e-beam stage drift and run-out error cause large-scale structure in the wavefront error. We deal with this problem by applying a mark detection loop to check for and correct out minuscule stage drifts. We measure the level and direction of stage drift and show that mark detection reduces peak-to-valley wavefront error

  3. Achieving high performance on the Intel Paragon

    SciTech Connect

    Greenberg, D.S.; Maccabe, B.; Riesen, R.; Wheat, S.; Womble, D.

    1993-11-01

    When presented with a new supercomputer most users will first ask {open_quotes}How much faster will my applications run?{close_quotes} and then add a fearful {open_quotes}How much effort will it take me to convert to the new machine?{close_quotes} This paper describes some lessons learned at Sandia while asking these questions about the new 1800+ node Intel Paragon. The authors conclude that the operating system is crucial to both achieving high performance and allowing easy conversion from previous parallel implementations to a new machine. Using the Sandia/UNM Operating System (SUNMOS) they were able to port a LU factorization of dense matrices from the nCUBE2 to the Paragon and achieve 92% scaled speed-up on 1024 nodes. Thus on a 44,000 by 44,000 matrix which had required over 10 hours on the previous machine, they completed in less than 1/2 hour at a rate of over 40 GFLOPS. Two keys to achieving such high performance were the small size of SUNMOS (less than 256 kbytes) and the ability to send large messages with very low overhead.

  4. Management issues for high performance storage systems

    SciTech Connect

    Louis, S.; Burris, R.

    1995-03-01

    Managing distributed high-performance storage systems is complex and, although sharing common ground with traditional network and systems management, presents unique storage-related issues. Integration technologies and frameworks exist to help manage distributed network and system environments. Industry-driven consortia provide open forums where vendors and users cooperate to leverage solutions. But these new approaches to open management fall short addressing the needs of scalable, distributed storage. We discuss the motivation and requirements for storage system management (SSM) capabilities and describe how SSM manages distributed servers and storage resource objects in the High Performance Storage System (HPSS), a new storage facility for data-intensive applications and large-scale computing. Modem storage systems, such as HPSS, require many SSM capabilities, including server and resource configuration control, performance monitoring, quality of service, flexible policies, file migration, file repacking, accounting, and quotas. We present results of initial HPSS SSM development including design decisions and implementation trade-offs. We conclude with plans for follow-on work and provide storage-related recommendations for vendors and standards groups seeking enterprise-wide management solutions.

  5. A High Performance COTS Based Computer Architecture

    NASA Astrophysics Data System (ADS)

    Patte, Mathieu; Grimoldi, Raoul; Trautner, Roland

    2014-08-01

    Using Commercial Off The Shelf (COTS) electronic components for space applications is a long standing idea. Indeed the difference in processing performance and energy efficiency between radiation hardened components and COTS components is so important that COTS components are very attractive for use in mass and power constrained systems. However using COTS components in space is not straightforward as one must account with the effects of the space environment on the COTS components behavior. In the frame of the ESA funded activity called High Performance COTS Based Computer, Airbus Defense and Space and its subcontractor OHB CGS have developed and prototyped a versatile COTS based architecture for high performance processing. The rest of the paper is organized as follows: in a first section we will start by recapitulating the interests and constraints of using COTS components for space applications; then we will briefly describe existing fault mitigation architectures and present our solution for fault mitigation based on a component called the SmartIO; in the last part of the paper we will describe the prototyping activities executed during the HiP CBC project.

  6. Strategy Guideline: Partnering for High Performance Homes

    SciTech Connect

    Prahl, D.

    2013-01-01

    High performance houses require a high degree of coordination and have significant interdependencies between various systems in order to perform properly, meet customer expectations, and minimize risks for the builder. Responsibility for the key performance attributes is shared across the project team and can be well coordinated through advanced partnering strategies. For high performance homes, traditional partnerships need to be matured to the next level and be expanded to all members of the project team including trades, suppliers, manufacturers, HERS raters, designers, architects, and building officials as appropriate. In an environment where the builder is the only source of communication between trades and consultants and where relationships are, in general, adversarial as opposed to cooperative, the chances of any one building system to fail are greater. Furthermore, it is much harder for the builder to identify and capitalize on synergistic opportunities. Partnering can help bridge the cross-functional aspects of the systems approach and achieve performance-based criteria. Critical success factors for partnering include support from top management, mutual trust, effective and open communication, effective coordination around common goals, team building, appropriate use of an outside facilitator, a partnering charter progress toward common goals, an effective problem-solving process, long-term commitment, continuous improvement, and a positive experience for all involved.

  7. High-performance computing in seismology

    SciTech Connect

    1996-09-01

    The scientific, technical, and economic importance of the issues discussed here presents a clear agenda for future research in computational seismology. In this way these problems will drive advances in high-performance computing in the field of seismology. There is a broad community that will benefit from this work, including the petroleum industry, research geophysicists, engineers concerned with seismic hazard mitigation, and governments charged with enforcing a comprehensive test ban treaty. These advances may also lead to new applications for seismological research. The recent application of high-resolution seismic imaging of the shallow subsurface for the environmental remediation industry is an example of this activity. This report makes the following recommendations: (1) focused efforts to develop validated documented software for seismological computations should be supported, with special emphasis on scalable algorithms for parallel processors; (2) the education of seismologists in high-performance computing technologies and methodologies should be improved; (3) collaborations between seismologists and computational scientists and engineers should be increased; (4) the infrastructure for archiving, disseminating, and processing large volumes of seismological data should be improved.

  8. High-performance computing for airborne applications

    SciTech Connect

    Quinn, Heather M; Manuzzato, Andrea; Fairbanks, Tom; Dallmann, Nicholas; Desgeorges, Rose

    2010-06-28

    Recently, there has been attempts to move common satellite tasks to unmanned aerial vehicles (UAVs). UAVs are significantly cheaper to buy than satellites and easier to deploy on an as-needed basis. The more benign radiation environment also allows for an aggressive adoption of state-of-the-art commercial computational devices, which increases the amount of data that can be collected. There are a number of commercial computing devices currently available that are well-suited to high-performance computing. These devices range from specialized computational devices, such as field-programmable gate arrays (FPGAs) and digital signal processors (DSPs), to traditional computing platforms, such as microprocessors. Even though the radiation environment is relatively benign, these devices could be susceptible to single-event effects. In this paper, we will present radiation data for high-performance computing devices in a accelerated neutron environment. These devices include a multi-core digital signal processor, two field-programmable gate arrays, and a microprocessor. From these results, we found that all of these devices are suitable for many airplane environments without reliability problems.

  9. Making silicon stronger.

    SciTech Connect

    Boyce, Brad Lee

    2010-11-01

    Silicon microfabrication has seen many decades of development, yet the structural reliability of microelectromechanical systems (MEMS) is far from optimized. The fracture strength of Si MEMS is limited by a combination of poor toughness and nanoscale etch-induced defects. A MEMS-based microtensile technique has been used to characterize the fracture strength distributions of both standard and custom microfabrication processes. Recent improvements permit 1000's of test replicates, revealing subtle but important deviations from the commonly assumed 2-parameter Weibull statistical model. Subsequent failure analysis through a combination of microscopy and numerical simulation reveals salient aspects of nanoscale flaw control. Grain boundaries, for example, suffer from preferential attack during etch-release thereby forming failure-critical grain-boundary grooves. We will discuss ongoing efforts to quantify the various factors that affect the strength of polycrystalline silicon, and how weakest-link theory can be used to make worst-case estimates for design.

  10. Helium irradiation effects in polycrystalline Si, silica, and single crystal Si

    NASA Astrophysics Data System (ADS)

    Abrams, K. J.; Hinks, J. A.; Pawley, C. J.; Greaves, G.; van den Berg, J. A.; Eyidi, D.; Ward, M. B.; Donnelly, S. E.

    2012-04-01

    Transmission electron microscopy (TEM) has been used to investigate the effects of room temperature 6 keV helium ion irradiation of a thin (≈55 nm thick) tri-layer consisting of polycrystalline Si, silica, and single-crystal Si. The ion irradiation was carried out in situ within the TEM under conditions where approximately 24% of the incident ions came to rest in the specimen. This paper reports on the comparative development of irradiation-induced defects (primarily helium bubbles) in the polycrystalline Si and single-crystal Si under ion irradiation and provides direct measurement of a radiation-induced increase in the width of the polycrystalline layer and shrinkage of the silica layer. Analysis using TEM and electron energy-loss spectroscopy has led to the hypothesis that these result from helium-bubble-induced swelling of the silicon and radiation-induced viscoelastic flow processes in the silica under the influence of stresses applied by the swollen Si layers. The silicon and silica layers are sputtered as a result of the helium ion irradiation; however, this is estimated to be a relatively minor effect with swelling and stress-related viscoelastic flow being the dominant mechanisms of dimensional change.

  11. Helium irradiation effects in polycrystalline Si, silica, and single crystal Si

    SciTech Connect

    Abrams, K. J.; Greaves, G.; Berg, J. A. van den; Hinks, J. A.; Donnelly, S. E.; Pawley, C. J.; Eyidi, D.; Ward, M. B.

    2012-04-15

    Transmission electron microscopy (TEM) has been used to investigate the effects of room temperature 6 keV helium ion irradiation of a thin ({approx_equal}55 nm thick) tri-layer consisting of polycrystalline Si, silica, and single-crystal Si. The ion irradiation was carried out in situ within the TEM under conditions where approximately 24% of the incident ions came to rest in the specimen. This paper reports on the comparative development of irradiation-induced defects (primarily helium bubbles) in the polycrystalline Si and single-crystal Si under ion irradiation and provides direct measurement of a radiation-induced increase in the width of the polycrystalline layer and shrinkage of the silica layer. Analysis using TEM and electron energy-loss spectroscopy has led to the hypothesis that these result from helium-bubble-induced swelling of the silicon and radiation-induced viscoelastic flow processes in the silica under the influence of stresses applied by the swollen Si layers. The silicon and silica layers are sputtered as a result of the helium ion irradiation; however, this is estimated to be a relatively minor effect with swelling and stress-related viscoelastic flow being the dominant mechanisms of dimensional change.

  12. High Performance Fortran for Aerospace Applications

    NASA Technical Reports Server (NTRS)

    Mehrotra, Piyush; Zima, Hans; Bushnell, Dennis M. (Technical Monitor)

    2000-01-01

    This paper focuses on the use of High Performance Fortran (HPF) for important classes of algorithms employed in aerospace applications. HPF is a set of Fortran extensions designed to provide users with a high-level interface for programming data parallel scientific applications, while delegating to the compiler/runtime system the task of generating explicitly parallel message-passing programs. We begin by providing a short overview of the HPF language. This is followed by a detailed discussion of the efficient use of HPF for applications involving multiple structured grids such as multiblock and adaptive mesh refinement (AMR) codes as well as unstructured grid codes. We focus on the data structures and computational structures used in these codes and on the high-level strategies that can be expressed in HPF to optimally exploit the parallelism in these algorithms.

  13. High Performance Database Management for Earth Sciences

    NASA Technical Reports Server (NTRS)

    Rishe, Naphtali; Barton, David; Urban, Frank; Chekmasov, Maxim; Martinez, Maria; Alvarez, Elms; Gutierrez, Martha; Pardo, Philippe

    1998-01-01

    The High Performance Database Research Center at Florida International University is completing the development of a highly parallel database system based on the semantic/object-oriented approach. This system provides exceptional usability and flexibility. It allows shorter application design and programming cycles and gives the user control via an intuitive information structure. It empowers the end-user to pose complex ad hoc decision support queries. Superior efficiency is provided through a high level of optimization, which is transparent to the user. Manifold reduction in storage size is allowed for many applications. This system allows for operability via internet browsers. The system will be used for the NASA Applications Center program to store remote sensing data, as well as for Earth Science applications.

  14. High-performance capillary electrophoresis of histones

    SciTech Connect

    Gurley, L.R.; London, J.E.; Valdez, J.G.

    1991-01-01

    A high performance capillary electrophoresis (HPCE) system has been developed for the fractionation of histones. This system involves electroinjection of the sample and electrophoresis in a 0.1M phosphate buffer at pH 2.5 in a 50 {mu}m {times} 35 cm coated capillary. Electrophoresis was accomplished in 9 minutes separating a whole histone preparation into its components in the following order of decreasing mobility; (MHP) H3, H1 (major variant), H1 (minor variant), (LHP) H3, (MHP) H2A (major variant), (LHP) H2A, H4, H2B, (MHP) H2A (minor variant) where MHP is the more hydrophobic component and LHP is the less hydrophobic component. This order of separation is very different from that found in acid-urea polyacrylamide gel electrophoresis and in reversed-phase HPLC and, thus, brings the histone biochemist a new dimension for the qualitative analysis of histone samples. 27 refs., 8 figs.

  15. How to create high-performing teams.

    PubMed

    Lam, Samuel M

    2010-02-01

    This article is intended to discuss inspirational aspects on how to lead a high-performance team. Cogent topics discussed include how to hire staff through methods of "topgrading" with reference to Geoff Smart and "getting the right people on the bus" referencing Jim Collins' work. In addition, once the staff is hired, this article covers how to separate the "eagles from the ducks" and how to inspire one's staff by creating the right culture with suggestions for further reading by Don Miguel Ruiz (The four agreements) and John Maxwell (21 Irrefutable laws of leadership). In addition, Simon Sinek's concept of "Start with Why" is elaborated to help a leader know what the core element should be with any superior culture. PMID:20127598

  16. High performance stepper motors for space mechanisms

    NASA Astrophysics Data System (ADS)

    Sega, Patrick; Estevenon, Christine

    1995-05-01

    Hybrid stepper motors are very well adapted to high performance space mechanisms. They are very simple to operate and are often used for accurate positioning and for smooth rotations. In order to fulfill these requirements, the motor torque, its harmonic content, and the magnetic parasitic torque have to be properly designed. Only finite element computations can provide enough accuracy to determine the toothed structures' magnetic permeance, whose derivative function leads to the torque. It is then possible to design motors with a maximum torque capability or with the most reduced torque harmonic content (less than 3 percent of fundamental). These later motors are dedicated to applications where a microstep or a synchronous mode is selected for minimal dynamic disturbances. In every case, the capability to convert electrical power into torque is much higher than on DC brushless motors.

  17. Parallel Algebraic Multigrid Methods - High Performance Preconditioners

    SciTech Connect

    Yang, U M

    2004-11-11

    The development of high performance, massively parallel computers and the increasing demands of computationally challenging applications have necessitated the development of scalable solvers and preconditioners. One of the most effective ways to achieve scalability is the use of multigrid or multilevel techniques. Algebraic multigrid (AMG) is a very efficient algorithm for solving large problems on unstructured grids. While much of it can be parallelized in a straightforward way, some components of the classical algorithm, particularly the coarsening process and some of the most efficient smoothers, are highly sequential, and require new parallel approaches. This chapter presents the basic principles of AMG and gives an overview of various parallel implementations of AMG, including descriptions of parallel coarsening schemes and smoothers, some numerical results as well as references to existing software packages.

  18. High performance stepper motors for space mechanisms

    NASA Technical Reports Server (NTRS)

    Sega, Patrick; Estevenon, Christine

    1995-01-01

    Hybrid stepper motors are very well adapted to high performance space mechanisms. They are very simple to operate and are often used for accurate positioning and for smooth rotations. In order to fulfill these requirements, the motor torque, its harmonic content, and the magnetic parasitic torque have to be properly designed. Only finite element computations can provide enough accuracy to determine the toothed structures' magnetic permeance, whose derivative function leads to the torque. It is then possible to design motors with a maximum torque capability or with the most reduced torque harmonic content (less than 3 percent of fundamental). These later motors are dedicated to applications where a microstep or a synchronous mode is selected for minimal dynamic disturbances. In every case, the capability to convert electrical power into torque is much higher than on DC brushless motors.

  19. High-performance parallel input device

    NASA Astrophysics Data System (ADS)

    Daniel, R. W.; Fischer, Patrick J.; Hunter, B.

    1993-12-01

    Research into force reflecting remote manipulation has recently started to move away from common error systems towards explicit force control. In order to maximize the benefit provided by explicit force reflection the designer has to take into account the asymmetry of the bandwidths of the forward and reflecting loops. This paper reports on a high performance system designed and built at Oxford University and Harwell Laboratories and on the preliminary results achieved when performing simple force reflecting tasks. The input device is based on a modified Stewart Platform, which offers the potential of very high bandwidth force reflection, well above the normal 2 - 10 Hz range achieved with common error systems. The slave is a nuclear hardened Puma industrial robot, offering a low cost, reliable solution to remote manipulation tasks.

  20. High performance robotic traverse of desert terrain.

    SciTech Connect

    Whittaker, William

    2004-09-01

    This report presents tentative innovations to enable unmanned vehicle guidance for a class of off-road traverse at sustained speeds greater than 30 miles per hour. Analyses and field trials suggest that even greater navigation speeds might be achieved. The performance calls for innovation in mapping, perception, planning and inertial-referenced stabilization of components, hosted aboard capable locomotion. The innovations are motivated by the challenge of autonomous ground vehicle traverse of 250 miles of desert terrain in less than 10 hours, averaging 30 miles per hour. GPS coverage is assumed to be available with localized blackouts. Terrain and vegetation are assumed to be akin to that of the Mojave Desert. This terrain is interlaced with networks of unimproved roads and trails, which are a key to achieving the high performance mapping, planning and navigation that is presented here.