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Sample records for high-power laser diode

  1. High power diode pumped alkali vapor lasers

    NASA Astrophysics Data System (ADS)

    Zweiback, J.; Krupke, B.

    2008-05-01

    Diode pumped alkali lasers have developed rapidly since their first demonstration. These lasers offer a path to convert highly efficient, but relatively low brightness, laser diodes into a single high power, high brightness beam. General Atomics has been engaged in the development of DPALs with scalable architectures. We have examined different species and pump characteristics. We show that high absorption can be achieved even when the pump source bandwidth is several times the absorption bandwidth. In addition, we present experimental results for both potassium and rubidium systems pumped with a 0.2 nm bandwidth alexandrite laser. These data show slope efficiencies of 67% and 72% respectively.

  2. High power diode lasers for solid-state laser pumps

    NASA Technical Reports Server (NTRS)

    Linden, Kurt J.; Mcdonnell, Patrick N.

    1994-01-01

    The development and commercial application of high power diode laser arrays for use as solid-state laser pumps is described. Such solid-state laser pumps are significantly more efficient and reliable than conventional flash-lamps. This paper describes the design and fabrication of diode lasers emitting in the 780 - 900 nm spectral region, and discusses their performance and reliability. Typical measured performance parameters include electrical-to-optical power conversion efficiencies of 50 percent, narrow-band spectral emission of 2 to 3 nm FWHM, pulsed output power levels of 50 watts/bar with reliability values of over 2 billion shots to date (tests to be terminated after 10 billion shots), and reliable operation to pulse lengths of 1 ms. Pulse lengths up to 5 ms have been demonstrated at derated power levels, and CW performance at various power levels has been evaluated in a 'bar-in-groove' laser package. These high-power 1-cm stacked-bar arrays are now being manufactured for OEM use. Individual diode laser bars, ready for package-mounting by OEM customers, are being sold as commodity items. Commercial and medical applications of these laser arrays include solid-state laser pumping for metal-working, cutting, industrial measurement and control, ranging, wind-shear/atmospheric turbulence detection, X-ray generation, materials surface cleaning, microsurgery, ophthalmology, dermatology, and dental procedures.

  3. High power diode lasers for solid-state laser pumps

    NASA Astrophysics Data System (ADS)

    Linden, Kurt J.; McDonnell, Patrick N.

    1994-02-01

    The development and commercial application of high power diode laser arrays for use as solid-state laser pumps is described. Such solid-state laser pumps are significantly more efficient and reliable than conventional flash-lamps. This paper describes the design and fabrication of diode lasers emitting in the 780 - 900 nm spectral region, and discusses their performance and reliability. Typical measured performance parameters include electrical-to-optical power conversion efficiencies of 50 percent, narrow-band spectral emission of 2 to 3 nm FWHM, pulsed output power levels of 50 watts/bar with reliability values of over 2 billion shots to date (tests to be terminated after 10 billion shots), and reliable operation to pulse lengths of 1 ms. Pulse lengths up to 5 ms have been demonstrated at derated power levels, and CW performance at various power levels has been evaluated in a 'bar-in-groove' laser package. These high-power 1-cm stacked-bar arrays are now being manufactured for OEM use. Individual diode laser bars, ready for package-mounting by OEM customers, are being sold as commodity items. Commercial and medical applications of these laser arrays include solid-state laser pumping for metal-working, cutting, industrial measurement and control, ranging, wind-shear/atmospheric turbulence detection, X-ray generation, materials surface cleaning, microsurgery, ophthalmology, dermatology, and dental procedures.

  4. Laser welding of polymers using high-power diode lasers

    NASA Astrophysics Data System (ADS)

    Bachmann, Friedrich G.; Russek, Ulrich A.

    2002-06-01

    Laser welding of polymers using high power diode lasers offers specific process advantages over conventional technologies, such as short process times while providing optically and qualitatively valuable weld seams, contactless yielding of the joining energy, absence of process induced vibrations, imposing minimal thermal stress and avoiding particle generation. Furthermore, this method exhibits high integration capabilities and automatization potential. Moreover, because of the current favorable cost development within the high power diode laser market laser welding of polymers has become more and more an industrially accepted joining method. This novel technology permits both, reliable high quality joining of mechanically and electronically highly sensitive micro components and hermetic sealing of macro components. There are different welding strategies available, which are adaptable to the current application. Within the frame of this discourse scientific and also application oriented result concerning laser transmission welding of polymers using preferably diode lasers are presented. Besides the sue laser system the fundamental process strategies as well as decisive process parameters are illustrated. The importance of optical, thermal and mechanical properties is discussed. Applications at real technical components will be presented, demonstrating the industrial implementation capability and the advantages of a novel technology.

  5. Laser welding of polymers using high-power diode lasers

    NASA Astrophysics Data System (ADS)

    Bachmann, Friedrich G.; Russek, Ulrich A.

    2003-09-01

    Laser welding of polymers using high power diode lasers offers specific process advantages over conventional technologies, such as short process times while providing optically and qualitatively valuable weld seams, contactless yielding of the joining energy, absence of process induced vibrations, imposing minimal thermal stress and avoiding particle generation. Furthermore this method exhibits high integration capabilities and automatization potential. Moreover, because of the current favorable cost development within the high power diode laser market laser welding of polymers has become more and more an industrially accepted joining method. This novel technology permits both, reliable high quality joining of mechanically and electronically highly sensitive micro components and hermetic sealing of macro components. There are different welding strategies available, which are adaptable to the current application. Within the frame of this discourse scientific and also application oriented results concerning laser transmission welding of polymers using preferably diode lasers are presented. Besides the used laser systems the fundamental process strategies as well as decisive process parameters are illustrated. The importance of optical, thermal and mechanical properties is discussed. Applications at real technical components will be presented, demonstrating the industrial implementation capability and the advantages of a novel technology.

  6. Thermal Regime of High-power Laser Diodes

    NASA Astrophysics Data System (ADS)

    Bezotosnyi, V. V.; Krokhin, O. N.; Oleshchenko, V. A.; Pevtsov, V. F.; Popov, Yu. M.; Cheshev, E. A.

    We discuss the design and application perspectives of different crystal, ceramic and composite-type submounts with thermo-compensating properties as well as submounts from materials with high thermal conductivity for overcoming thermal problem in high-power laser diodes (LD) and improving thermal management of other high-power optoelectronic and electronic semiconductor devices. Thermal fields in high-power laser diodes were calculated in 3 D thermal model at CW operation for some heatsink designs taking into account the experimental dependence of laser total efficiency against pumping current in order to extend the range of reliable operation up to thermal loads 20-30 W and corresponding output optical power up to 15-20 W for 100 μm stripe laser diodes.

  7. Diode pumped alkali vapor lasers for high power applications

    NASA Astrophysics Data System (ADS)

    Zweiback, J.; Krupke, B.; Komashko, A.

    2008-02-01

    General Atomics has been engaged in the development of diode pumped alkali vapor lasers. We have been examining the design space looking for designs that are both efficient and easily scalable to high powers. Computationally, we have looked at the effect of pump bandwidth on laser performance. We have also looked at different lasing species. We have used an alexandrite laser to study the relative merits of different designs. We report on the results of our experimental and computational studies.

  8. In-volume heating using high-power laser diodes

    NASA Astrophysics Data System (ADS)

    Denisenkov, Valentin S.; Kiyko, Vadim V.; Vdovin, Gleb V.

    2015-03-01

    High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface heating with different approaches to make the heat distribution more uniform and the process more efficient. High-power lasers can in theory provide in-bulk heating which can sufficiently increase the uniformity of heat distribution thus making the process more efficient. We chose two media (vegetable fat and glucose) for feasibility experiments. First, we checked if the media have necessary absorption coefficients on the wavelengths of commercially available laser diodes (940-980 nm). This was done using spectrophotometer at 700-1100 nm which provided the dependences of transmission from the wavelength. The results indicate that vegetable fat has noticeable transmission dip around 925 nm and glucose has sufficient dip at 990 nm. Then, after the feasibility check, we did numerical simulation of the heat distribution in bulk using finite elements method. Based on the results, optimal laser wavelength and illuminator configuration were selected. Finally, we carried out several pilot experiments with high-power diodes heating the chosen media.

  9. Materials processing with a high power diode laser

    SciTech Connect

    Li, L.; Lawrence, J.; Spencer, J.T.

    1996-12-31

    This paper reports on work exploring the feasibility of a range of materials processing applications using a Diomed 60W diode laser delivered through a 600{mu}m diameter optical fibre to a 3 axis CNC workstation. The applications studied include: marking/engraving natural stones (marble and granite), marking ceramic tiles, sealing tile grouts, cutting and marking glass, marking/engraving wood, stripping paint and lacquer, and welding metallic wires. The study shows that even at the present limited power level of diode lasers, many materials processing applications can be accomplished with satisfactory results. Through the study an initial understanding of interaction of high power diode laser (HPDL) beam with various materials has been gained. Also, within the paper basic beam characteristics, and current R&D activities in HPDL technology and materials processing applications are reviewed.

  10. High power diode lasers: technology and application in Europe

    NASA Astrophysics Data System (ADS)

    Behringer, Martin; Eberhard, Franz; Herrmann, Gerhard; Luft, Johann; Maric, J.; Morgott, Stefan; Philippens, Marc; Teich, W.

    2003-03-01

    The application field of high power semiconductor lasers is growing rapidly and covers e.g. solid state laser pumping, metal and plastic welding, hard and soft soldering, suface treatment and others. Preferably those applications are attractive, which do not require extremely high beam quality. We have investigated high power diode-laser bars from 808 nm to 980 nm. The scope of this presentation is on focusability and beam quality. For better beam shaping structures with reduced fill factor of 25% to 30% were developed. They were operated in continuous wave operation at power levels of up to 55 W. Tests indicate extrapolated lifetimes of more than 100,000 hours at 40 W at 980 nm cw and about 10,000 hours at 45 W - 50 W at 940 nm and 808 nm. Monolithically stacked NonostacksR were investigated. Operation up to 100°C with excellent lifetimes could be demonstrated. New concepts and applications for low mode number high power diode lasers like tapered laser bars are presented. Examples for various current areas of interest in European research facilities will be given.

  11. Passively cooled diode laser for high-power applications

    NASA Astrophysics Data System (ADS)

    Bonati, Guido F.; Hennig, Petra; Schmidt, Karsten

    2004-06-01

    For the usage of diode lasers in industrial applications, customers ask today for expected lifetimes of more then 30.000 hours. To match the request for low costs per Watt as well, the output power has to be as high as possible. To achieve a maximum power out of a diode laser bar, heat removal must be extremely efficient. Today, micro channel heatsinks (MCHS) are the only way to achieve the high power level of 50W. But due to erosion/corrosion effects the lifetime of MCHS is limited at 15000...20.000 hours today. Finally we have to determine that for selected semiconductor materials not the semiconductor but the heatsink is limiting the expected lifetime of high power diode lasers today. Passive heat sinks based on solid copper are not limiting lifetime expectations in any way. But as cooling efficiency is lower, the power has to be reduced to a level of 30...40W. The first time ever, the JENOPTIK Laserdiode can present today a cooling technique that combines the passive cooling of a diode laser bar with the optical output a power of a bar, mounted on a MCHS. Using a special heat exchanger called DCB (patent pending) we were able to increase the power to 50W per bar while looking forward to extend the expected lifetime to more than 30.000 hours for selected materials. Restrictions on the quality of the water by means of deionization grade or PH- level are no longer necessary. The device is operating with regular water. The flow rate is as low as on MCHS, the pressure drop over the DCB is comparable. Additionally, the measurements will show an even lower thermal resistance compared to MCHS. The second generationof engineering samples is built up for pumping rows. A vertical stack design will be available for evaluating purposes soon. All these efforts are part of the JENOPTIK Laserdiode's LongLifeTechnology.

  12. Two photon absorption in high power broad area laser diodes

    NASA Astrophysics Data System (ADS)

    Dogan, Mehmet; Michael, Christopher P.; Zheng, Yan; Zhu, Lin; Jacob, Jonah H.

    2014-03-01

    Recent advances in thermal management and improvements in fabrication and facet passivation enabled extracting unprecedented optical powers from laser diodes (LDs). However, even in the absence of thermal roll-over or catastrophic optical damage (COD), the maximum achievable power is limited by optical non-linear effects. Due to its non-linear nature, two-photon absorption (TPA) becomes one of the dominant factors that limit efficient extraction of laser power from LDs. In this paper, theoretical and experimental analysis of TPA in high-power broad area laser diodes (BALD) is presented. A phenomenological optical extraction model that incorporates TPA explains the reduction in optical extraction efficiency at high intensities in BALD bars with 100μm-wide emitters. The model includes two contributions associated with TPA: the straightforward absorption of laser photons and the subsequent single photon absorption by the holes and electrons generated by the TPA process. TPA is a fundamental limitation since it is inherent to the LD semiconductor material. Therefore scaling the LDs to high power requires designs that reduce the optical intensity by increasing the mode size.

  13. High power laser diodes for the NASA direct detection laser transceiver experiment

    NASA Technical Reports Server (NTRS)

    Seery, Bernard D.; Holcomb, Terry L.

    1988-01-01

    High-power semiconductor laser diodes selected for use in the NASA space laser communications experiments are discussed. The diode selection rationale is reviewed, and the laser structure is shown. The theory and design of the third mirror lasers used in the experiments are addressed.

  14. Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

    NASA Technical Reports Server (NTRS)

    Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

    2005-01-01

    Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

  15. High-power diode lasers in spray process diagnostics

    NASA Astrophysics Data System (ADS)

    Larjo, Jussi

    2005-03-01

    Spray processes are commonly employed in many kinds of surface treatment applications, most prominently in medical, material processing and manufacturing industries. While spraying is a well established technology, we still lack complete understanding of all interactions within a given spray process. This is because the physical models of many subprocesses, like turbulent gas flow, particle formation and gas-particle interaction, are limited and often provide only qualitative predictions on the real process. Imaging measurements are essential in gaining better understanding of a spray process. They offer a way to measure properties of both the complete spray plume and individual droplets. A spray analysis system typically requires a high-power stroboscopic light source; Xe flashlamps and Q-switched solid state lasers have been the most common choice until recently. The development of high-power diode lasers has provided a versatile, low-cost and easy to use light source for the analysis of spray processes. We present a real-time diode laser based imaging system to measure droplet density, size and velocity distributions in a spray, together with the spray plume geometry.

  16. High power, high efficiency diode pumped Raman fiber laser

    NASA Astrophysics Data System (ADS)

    Glick, Yaakov; Fromzel, Viktor; Zhang, Jun; Dahan, Asaf; Ter-Gabrielyan, Nikolay; Pattnaik, Radha K.; Dubinskii, Mark

    2016-06-01

    We demonstrate a high power high efficiency Raman fiber laser pumped directly by a laser diode module at 976 nm. 80 Watts of CW power were obtained at a wavelength of 1020 nm with an optical-to-optical efficiency of 53%. When working quasi-CW, at a duty cycle of 30%, 85 W of peak power was produced with an efficiency of 60%. A commercial graded-index (GRIN) core fiber acts as the Raman fiber in a power oscillator configuration, which includes spectral selection to prevent generation of the 2nd Stokes. In addition, significant brightness enhancement of the pump beam is attained due to the Raman gain distribution profile in the GRIN fiber. To the best of our knowledge, this is the highest power Raman fiber laser directly pumped by laser diodes, which also exhibits a record efficiency for such a laser. In addition, it is the highest power Raman fiber laser (regardless of pumping source) demonstrated based on a GRIN fiber.

  17. High-power diode lasers for optical communications applications

    NASA Technical Reports Server (NTRS)

    Carlin, D. B.; Goldstein, B.; Channin, D. J.

    1985-01-01

    High-power, single-mode, double-heterojunction AlGaAs diode lasers are being developed to meet source requirements for both fiber optic local area network and free space communications systems. An individual device, based on the channeled-substrate-planar (CSP) structure, has yielded single spatial and longitudinal mode outputs of up to 90 mW CW, and has maintained a single spatial mode to 150 mW CW. Phase-locked arrays of closely spaced index-guided lasers have been designed and fabricated with the aim of multiplying the outputs of the individual devices to even higher power levels in a stable, single-lobe, anastigmatic beam. The optical modes of the lasers in such arrays can couple together in such a way that they appear to be emanating from a single source, and can therefore be efficiently coupled into optical communications systems. This paper will review the state of high-power laser technology and discuss the communication system implications of these devices.

  18. Liquid metal heat sink for high-power laser diodes

    NASA Astrophysics Data System (ADS)

    Vetrovec, John; Litt, Amardeep S.; Copeland, Drew A.; Junghans, Jeremy; Durkee, Roger

    2013-02-01

    We report on the development of a novel, ultra-low thermal resistance active heat sink (AHS) for thermal management of high-power laser diodes (HPLD) and other electronic and photonic components. AHS uses a liquid metal coolant flowing at high speed in a miniature closed and sealed loop. The liquid metal coolant receives waste heat from an HPLD at high flux and transfers it at much reduced flux to environment, primary coolant fluid, heat pipe, or structure. Liquid metal flow is maintained electromagnetically without any moving parts. Velocity of liquid metal flow can be controlled electronically, thus allowing for temperature control of HPLD wavelength. This feature also enables operation at a stable wavelength over a broad range of ambient conditions. Results from testing an HPLD cooled by AHS are presented.

  19. Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

    NASA Technical Reports Server (NTRS)

    Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

    2004-01-01

    Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

  20. Effect of interface layer on the performance of high power diode laser arrays

    NASA Astrophysics Data System (ADS)

    Zhang, Pu; Wang, Jingwei; Xiong, Lingling; Li, Xiaoning; Hou, Dong; Liu, Xingsheng

    2015-02-01

    Packaging is an important part of high power diode laser (HPLD) development and has become one of the key factors affecting the performance of high power diode lasers. In the package structure of HPLD, the interface layer of die bonding has significant effects on the thermal behavior of high power diode laser packages and most degradations and failures in high power diode laser packages are directly related to the interface layer. In this work, the effects of interface layer on the performance of high power diode laser array were studied numerically by modeling and experimentally. Firstly, numerical simulations using finite element method (FEM) were conducted to analyze the effects of voids in the interface layer on the temperature rise in active region of diode laser array. The correlation between junction temperature rise and voids was analyzed. According to the numerical simulation results, it was found that the local temperature rise of active region originated from the voids in the solder layer will lead to wavelength shift of some emitters. Secondly, the effects of solder interface layer on the spectrum properties of high power diode laser array were studied. It showed that the spectrum shape of diode laser array appeared "right shoulder" or "multi-peaks", which were related to the voids in the solder interface layer. Finally, "void-free" techniques were developed to minimize the voids in the solder interface layer and achieve high power diode lasers with better optical-electrical performances.

  1. High power diode laser Master Oscillator-Power Amplifier (MOPA)

    NASA Technical Reports Server (NTRS)

    Andrews, John R.; Mouroulis, P.; Wicks, G.

    1994-01-01

    High power multiple quantum well AlGaAs diode laser master oscillator - power amplifier (MOPA) systems were examined both experimentally and theoretically. For two pass operation, it was found that powers in excess of 0.3 W per 100 micrometers of facet length were achievable while maintaining diffraction-limited beam quality. Internal electrical-to-optical conversion efficiencies as high as 25 percent were observed at an internal amplifier gain of 9 dB. Theoretical modeling of multiple quantum well amplifiers was done using appropriate rate equations and a heuristic model of the carrier density dependent gain. The model gave a qualitative agreement with the experimental results. In addition, the model allowed exploration of a wider design space for the amplifiers. The model predicted that internal electrical-to-optical conversion efficiencies in excess of 50 percent should be achievable with careful system design. The model predicted that no global optimum design exists, but gain, efficiency, and optical confinement (coupling efficiency) can be mutually adjusted to meet a specific system requirement. A three quantum well, low optical confinement amplifier was fabricated using molecular beam epitaxial growth. Coherent beam combining of two high power amplifiers injected from a common master oscillator was also examined. Coherent beam combining with an efficiency of 93 percent resulted in a single beam having diffraction-limited characteristics. This beam combining efficiency is a world record result for such a system. Interferometric observations of the output of the amplifier indicated that spatial mode matching was a significant factor in the less than perfect beam combining. Finally, the system issues of arrays of amplifiers in a coherent beam combining system were investigated. Based upon experimentally observed parameters coherent beam combining could result in a megawatt-scale coherent beam with a 10 percent electrical-to-optical conversion efficiency.

  2. Injection locking of a high power ultraviolet laser diode for laser cooling of ytterbium atoms

    SciTech Connect

    Hosoya, Toshiyuki; Miranda, Martin; Inoue, Ryotaro; Kozuma, Mikio

    2015-07-15

    We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power of 40 mW and another laser diode for amplifying the laser power up to 220 mW by injection locking. The systematic method for optimization of our injection locking can also be applied to high power light sources at any other wavelengths. Our system does not depend on complex nonlinear frequency-doubling and can be made compact, which will be useful for providing light sources for laser cooling experiments including transportable optical lattice clocks.

  3. Reliability of high power laser diodes with external optical feedback

    NASA Astrophysics Data System (ADS)

    Bonsendorf, Dennis; Schneider, Stephan; Meinschien, Jens; Tomm, Jens W.

    2016-03-01

    Direct diode laser systems gain importance in the fields of material processing and solid-state laser pumping. With increased output power, also the influence of strong optical feedback has to be considered. Uncontrolled optical feedback is known for its spectral and power fluctuation effects, as well as potential emitter damage. We found that even intended feedback by use of volume Bragg gratings (VBG) for spectral stabilization may result in emitter lifetime reduction. To provide stable and reliable laser systems design, guidelines and maximum feedback ratings have to be found. We present a model to estimate the optical feedback power coupled back into the laser diode waveguide. It includes several origins of optical feedback and wide range of optical elements. The failure thresholds of InGaAs and AlGaAs bars have been determined not only at standard operation mode but at various working points. The influence of several feedback levels to laser diode lifetime is investigated up to 4000h. The analysis of the semiconductor itself leads to a better understanding of the degradation process by defect spread. Facet microscopy, LBIC- and electroluminescence measurements deliver detailed information about semiconductor defects before and after aging tests. Laser diode protection systems can monitor optical feedback. With this improved understanding, the emergency shutdown threshold can be set low enough to ensure laser diode reliability but also high enough to provide better machine usability avoiding false alarms.

  4. GaAs Substrates for High-Power Diode Lasers

    NASA Astrophysics Data System (ADS)

    Mueller, Georg; Berwian, Patrick; Buhrig, Eberhard; Weinert, Berndt

    GaAs substrate crystals with low dislocation density (Etch-Pit Density (EPD) < 500,^-2) and Si-doping ( ~10^18,^-3) are required for the epitaxial production of high-power diode-lasers. Large-size wafers (= 3 mathrm{in} -> >=3,) are needed for reducing the manufacturing costs. These requirements can be fulfilled by the Vertical Bridgman (VB) and Vertical Gradient Freeze (VGF) techniques. For that purpose we have developed proper VB/VGF furnaces and optimized the thermal as well as the physico-chemical process conditions. This was strongly supported by extensive numerical process simulation. The modeling of the VGF furnaces and processes was made by using a new computer code called CrysVUN++, which was recently developed in the Crystal Growth Laboratory in Erlangen.GaAs crystals with diameters of 2 and 3in were grown in pyrolytic Boron Nitride (pBN) crucibles having a small-diameter seed section and a conical part. Boric oxide was used to fully encapsulate the crystal and the melt. An initial silicon content in the GaAs melt of c (melt) = 3 x10^19,^-3 has to be used in order to achieve a carrier concentration of n = (0.8- 2) x10^18,^-3, which is the substrate specification of the device manufacturer of the diode-laser. The EPD could be reduced to values between 500,^-2 and 50,^-2 with a Si-doping level of 8 x10^17 to 1 x10^18,^-3. Even the 3in wafers have rather large dislocation-free areas. The lowest EPDs ( <100,^-2) are achieved for long seed wells of the crucible.

  5. Characterization of High-power Quasi-cw Laser Diode Arrays

    NASA Technical Reports Server (NTRS)

    Stephen, Mark A.; Vasilyev, Aleksey; Troupaki, Elisavet; Allan, Graham R.; Kashem, Nasir B.

    2005-01-01

    NASA s requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented.

  6. High power diode laser stack development using gold-tin bonding technology

    NASA Astrophysics Data System (ADS)

    Hou, Dong; Wang, Jingwei; Zhang, Pu; Cai, Lei; Dai, Ye; Li, Yingjie; Liu, Xingsheng

    2015-02-01

    High power diode lasers have increased application in many fields. In this work, a sophisticated high power and high performance conduction cooled diode laser stack has been developed for long pulse duration and high duty cycle using gold-tin (AuSn) bonding technology. The transient thermal behavior and optical simulation of the laser diode stack module are investigated to optimize the laser device structure. CTE-matched submount and AuSn hard solder are used for bonding the laser diode bar to achieve higher reliability and longer lifetime. Guided by the numerical simulation and analytical results, conduction cooled diode laser stack with high power, long pulse duration and high duty cycle is fabricated and characterized. Compared with the conventional indium bonding technology, the new design is a promising approach to obtain improved performance with high reliability and long lifetime.

  7. Case studies of industrial applications of high-power diode laser in Finland

    NASA Astrophysics Data System (ADS)

    Hovikorpi, Jari; Jansson, Anssi; Salminen, Antti

    2003-06-01

    The high power diode laser is a new industrial tool. It has several advantages and disadvantages compared to the conventional industrially used CO2 and Nd:YAG laser. The most promising areas of application of diode laser have been considered to be thin sheet welding and hardening. Quite a few feasibility studies of the use of diode laser have been carried out in Finland. So far there has been some application in which diode laser is the most suitable laser. Typically, the HPDL is integrated to an industrial robot. The welding of stainless steel housing, car door lock and catalytic converters are typical examples of applications in which diode laser has technological as well as economical advantages over the conventional laser and welding techniques. The welding of these products requires good control over the heat input, short through put time and low investment. The weld cross-section of a diode laser weld is, because of conduction limited welding process, more suitable for these applications than the keyhole welding. Hardening of a large gear wheel presents also a good example of an application in which the diode laser makes it possible to economically produce structures that have not earlier been possible. Hardening requires a special form of heat delivery in order to ensure evenly hardened zone and acceptable quality. The application was performed with two high power diode lasers. The case studies of these four applications are presented and discussed in details in this paper.

  8. High power diode laser array development using completely indium free packaging technology with narrow spectrum

    NASA Astrophysics Data System (ADS)

    Hou, Dong; Wang, Jingwei; Gao, Lijun; Liang, Xuejie; Li, Xiaoning; Liu, Xingsheng

    2016-03-01

    The high power diode lasers have been widely used in many fields. In this work, a sophisticated high power and high performance horizontal array of diode laser stacks have been developed and fabricated with high duty cycle using hard solder bonding technology. CTE-matched submount and Gold Tin (AuSn) hard solder are used for bonding the diode laser bar to achieve the performances of anti-thermal fatigue, higher reliability and longer lifetime. This array consists of 30 bars with the expected optical output peak power of 6000W. By means of numerical simulation and analytical results, the diode laser bars are aligned on suitable positions along the water cooled cooler in order to achieve the uniform wavelength with narrow spectrum and accurate central wavelength. The performance of the horizontal array, such as output power, spectrum, thermal resistance, life time, etc., is characterized and analyzed.

  9. Reliability of high-power AlGaAs/GaAs QW laser diodes

    NASA Astrophysics Data System (ADS)

    Dabkowski, Ferdynand P.; Pendse, D. R.; Barrett, Richard J.; Chin, Aland K.; Jollay, Richard A.; Clausen, Edward M., Jr.; Hughes, L. C.; Sanders, Neil B.

    1996-09-01

    High power laser diodes have been continuously gaining more practical applications. In the majority of these applications, device performance is a determining factor. However, device reliability determines whether a laser diode can be successfully introduced in a commercial product. We review some device reliability problems and their solutions found through customer experience while supplying packaged high power AlGaAs/GaAs quantum well laser diodes, utilized in medical, high resolution printers. The reliability problems were related to either photo-induced chemical reactions on the output facet leading to visible optical damage or the propensity of the material to rapidly develop dark line defects. To improve the reliability of high power laser diodes, we have performed numerous aging studies, followed by detailed failure mode analysis. Both hermetically packaged devices and devices exposed to air ambient were evaluated. The devices whose parameters deteriorated during aging were examined with optical microscopy, infrared microscopy, scanning electron microscopy, Auger spectroscopy, residual gas analysis and also electron beam induced current. We report the results of the failure mode analysis and suggest solutions to eliminate failures of high power laser diodes.

  10. High power visible diode laser for the treatment of eye diseases by laser coagulation

    NASA Astrophysics Data System (ADS)

    Heinrich, Arne; Hagen, Clemens; Harlander, Maximilian; Nussbaumer, Bernhard

    2015-03-01

    We present a high power visible diode laser enabling a low-cost treatment of eye diseases by laser coagulation, including the two leading causes of blindness worldwide (diabetic retinopathy, age-related macular degeneration) as well as retinopathy of prematurely born children, intraocular tumors and retinal detachment. Laser coagulation requires the exposure of the eye to visible laser light and relies on the high absorption of the retina. The need for treatment is constantly increasing, due to the demographic trend, the increasing average life expectancy and medical care demand in developing countries. The World Health Organization reacts to this demand with global programs like the VISION 2020 "The right to sight" and the following Universal Eye Health within their Global Action Plan (2014-2019). One major point is to motivate companies and research institutes to make eye treatment cheaper and easily accessible. Therefore it becomes capital providing the ophthalmology market with cost competitive, simple and reliable technologies. Our laser is based on the direct second harmonic generation of the light emitted from a tapered laser diode and has already shown reliable optical performance. All components are produced in wafer scale processes and the resulting strong economy of scale results in a price competitive laser. In a broader perspective the technology behind our laser has a huge potential in non-medical applications like welding, cutting, marking and finally laser-illuminated projection.

  11. Laser remelting of Ti6AL4V using high power diode laser

    NASA Astrophysics Data System (ADS)

    Amaya-Vázquez, M. R.; Sánchez-Amaya, J. M.; Boukha, Z.; El Amrani, K.; Botana, F. J.

    2012-04-01

    Titanium alloys present excellent mechanical and corrosion properties, being widely employed in different industries such as medical, aerospace, automotive, petrochemical, nuclear and power generation, etc. Ti6Al4V is the α-β alloy most employed in industry. The modification of its properties can be achieved with convectional heat treatments and/or with laser processing. Laser remelting (LR) is a technology applied to Ti6Al4V by other authors with excimer and Nd-Yag laser with pure argon shielding gas to prevent risk of oxidation. In the present contribution, laser remelting has been applied for the first time to Ti6Al4V with a high power diode laser (with pure argon as shielding gas). Results showed that remelted samples (with medium energy densities) have higher microhardness and better corrosion resistance than Ti6Al4V base metal.

  12. High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

    NASA Technical Reports Server (NTRS)

    Connolly, J. C.; Goldstein, B.; Pultz, G. N.; Slavin, S. E.; Carlin, D. B.; Ettenberg, M.

    1988-01-01

    A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

  13. DIAL monitoring of atmospheric climate-determining gases employing high-power pulsed laser diodes

    NASA Astrophysics Data System (ADS)

    Penchev, Stoyan P.; Naboko, Sergei V.; Naboko, Vassily N.; Pencheva, Vasilka H.; Donchev, T.; Pavlov, Lyubomir Y.; Simeonov, P.

    2003-11-01

    High-power pulsed laser diodes are employed for determining atmospheric humidity and methane. The proposed DIAL method optimizes the spectral properties of laser radiation within the molecular absorption bands of 0.86 - 0.9 μm of these major greenhouse gases. The explicit absorption spectrum is explored by computational convolution method based on reference data on spectral linestrengths modulated by the characteristic broad laser line of the selected laser diodes. The lidar scheme is ultimately compact, of low-energy consumption and suggests a large potential for ecological monitoring.

  14. High Power Diode Pumped 1.06 Micron Solid State Laser

    NASA Astrophysics Data System (ADS)

    Arvind, Mukundarajan A.; Martin, Dan W.; Osterhage, R. J.

    1989-07-01

    Diode pumped solid state lasers have been attracting significant interest in recent years due to advances in high power semiconductor diode lasers. They offer considerable advantages over flashlamp pumped lasers such as compact size, high efficiency, lower heat dissipation and solid-state reliability. In this paper, we report on the results of a Nd:YAG laser, transverse pumped by diode laser arrays. We have measured an output power of 1.14 Watts at 1.06 microns with a laser diode power consumption of 40 Watts. This represents the highest reported electrical efficiency (2.85%) for a transverse pumped, CW, TEM00 laser. The diode arrays were selected and tuned to emit at wavelengths close to the peak neodymium absorption line at 0.808 microns with Peltier coolers. Two diode laser bars side pumped a 20 mm long, 1.5 mm diameter Nd:YAG laser rod. The optical cavity is 13.8 cm long consisting of a high reflectivity mirror and a 95% reflectivity output mirror. The output beam divergence was measured to be near diffraction limited at 1.4 milliradians, and the beam diameter was 1 mm.

  15. High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure

    SciTech Connect

    Liu, Lei; Qu, Hongwei; Liu, Yun; Zhang, Yejin; Zheng, Wanhua; Wang, Yufei; Qi, Aiyi

    2014-12-08

    900 nm longitudinal photonic band crystal (PBC) laser diodes with optimized epitaxial structure are fabricated. With a same calculated fundamental-mode divergence, stronger mode discrimination is achieved by a quasi-periodic index modulation in the PBC waveguide than a periodic one. Experiments show that the introduction of over 5.5 μm-thick PBC waveguide contributes to only 10% increment of the internal loss for the laser diodes. For broad area PBC lasers, output powers of 5.75 W under continuous wave test and over 10 W under quasi-continuous wave test are reported. The vertical divergence angles are 10.5° at full width at half maximum and 21.3° with 95% power content, in conformity with the simulated angles. Such device shows a prospect for high-power narrow-vertical-divergence laser emission from single diode laser and laser bar.

  16. Laser assisted die bending: a new application of high power diode lasers

    NASA Astrophysics Data System (ADS)

    Schuöcker, D.; Schumi, T.; Spitzer, O.; Bammer, F.; Schuöcker, G.; Sperrer, G.

    2015-02-01

    Nowadays high power lasers are mainly used for cutting of sheet metals, for welding, hardening and rapid prototyping. In the forming of sheet metals as bending or deep drawing lasers are not used. Nevertheless a few years ago a new application of high power lasers has been invented, where bending of materials that break at room temperature becomes possible by heating them along the bending edge with high power lasers thus allowing their treatment without cracks and rupture. For this purpose a large number of diode lasers are arranged in the bottom tool of a bending machine (a V-shaped die) which heat up the initially flat sheet metal during the bending process what is performed by pressing it into the die with a knife shaped upper tool where due to the laser heating the material is softened and thus cracks are avoided. For the technical realization of the new process of laser assisted die bending, modules equipped with numerous laser diodes and a total beam power of 2,5 kW are used. The light emitted by these modules enters a tool with a length of 15cm and is deflected towards the workpiece. By using ten of these modules with adjacent dies and by integrating those in a bending press a bending edge of sheet metals with a length of 1500mm can be realized. Such a bending press with laser assistance also needs energization with a power of practically 50kW, a respective water flow, a heat exchanger system and also a control for all functions of this system. Special measures have also been developed to avoid radiating of those tools that are not covered by a workpiece in the case of bending edges shorter than the full length of the bending tools whereas individual short circuiting of diode modules can be performed. Specific measures to ensure a safe operation without any harm to the operational person have been realized. Exploitation of the bending process has been carried out for titanium, where material thicknesses up to 3mm have been bent successfully.

  17. Improving Reliability of High Power Quasi-CW Laser Diode Arrays Operating in Long Pulse Mode

    NASA Technical Reports Server (NTRS)

    Amzajerdian, Farzin; Meadows, Byron L.; Barnes, Bruce W.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.; Baker, Nathaniel R.

    2006-01-01

    Operating high power laser diode arrays in long pulse regime of about 1 msec, which is required for pumping 2-micron thulium and holmium-based lasers, greatly limits their useful lifetime. This paper describes performance of laser diode arrays operating in long pulse mode and presents experimental data of the active region temperature and pulse-to-pulse thermal cycling that are the primary cause of their premature failure and rapid degradation. This paper will then offer a viable approach for determining the optimum design and operational parameters leading to the maximum attainable lifetime.

  18. Generation of high-power nanosecond pulses from laser diode-pumped Nd:YAG lasers

    NASA Technical Reports Server (NTRS)

    Chan, Kinpui

    1988-01-01

    Simulation results are used to compare the pulse energy levels and pulse energy widths that can be achieved with LD-pumped Nd:YAG lasers for both the pulse-transmission mode (PTM) and pulse-reflection mode (PRM) Q-switching methods for pulse energy levels up to hundreds of microjoules and pulse widths as short as 1 ns. It is shown that high-power pulses with pulse widths as short as 1 ns can be generated with PTM Q-switched in LD-pumped Nd:YAG lasers. With the PRM Q-switching method, pulse widths as short as 2 ns and pulse energy at the level of a few hundred microjoules can also be achieved but require pumping with 8-10-mJ AlGaAs laser diode arrays.

  19. Injection locking of a low cost high power laser diode at 461 nm.

    PubMed

    Pagett, C J H; Moriya, P H; Celistrino Teixeira, R; Shiozaki, R F; Hemmerling, M; Courteille, Ph W

    2016-05-01

    Stable laser sources at 461 nm are important for optical cooling of strontium atoms. In most existing experiments, this wavelength is obtained by frequency doubling infrared lasers, since blue laser diodes either have low power or large emission bandwidths. Here, we show that injecting less than 10 mW of monomode laser radiation into a blue multimode 500 mW high power laser diode is capable of slaving at least 50% of the power to the desired frequency. We verify the emission bandwidth reduction by saturation spectroscopy on a strontium gas cell and by direct beating of the slave with the master laser. We also demonstrate that the laser can efficiently be used within the Zeeman slower for optical cooling of a strontium atomic beam. PMID:27250390

  20. Injection locking of a low cost high power laser diode at 461 nm

    NASA Astrophysics Data System (ADS)

    Pagett, C. J. H.; Moriya, P. H.; Celistrino Teixeira, R.; Shiozaki, R. F.; Hemmerling, M.; Courteille, Ph. W.

    2016-05-01

    Stable laser sources at 461 nm are important for optical cooling of strontium atoms. In most existing experiments, this wavelength is obtained by frequency doubling infrared lasers, since blue laser diodes either have low power or large emission bandwidths. Here, we show that injecting less than 10 mW of monomode laser radiation into a blue multimode 500 mW high power laser diode is capable of slaving at least 50% of the power to the desired frequency. We verify the emission bandwidth reduction by saturation spectroscopy on a strontium gas cell and by direct beating of the slave with the master laser. We also demonstrate that the laser can efficiently be used within the Zeeman slower for optical cooling of a strontium atomic beam.

  1. High power diode lasers emitting from 639 nm to 690 nm

    NASA Astrophysics Data System (ADS)

    Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

    2014-03-01

    There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

  2. High-power diode-pumped mode-locked Yb:YAG ceramic laser

    NASA Astrophysics Data System (ADS)

    Nakamura, Shinki; Hikita, Yuto; Sone, Hiroyasu; Ogawa, Takayo; Wada, Satoshi

    2014-05-01

    A high-power diode-pumped passively mode-locked Yb:YAG ceramic laser was demonstrated. An average output power of 3.80W with a pulse duration of 433 fs at a repetition rate of 90.9MHz was obtained at a wavelength of 1050 nm using a 2% output coupler. A peak power of 96.5kW was also obtained. To the best of our knowledge, these are the highest reported average power and peak power for a diode-pumped mode-locked Yb:YAG ceramic laser.

  3. High power, 1060-nm diode laser with an asymmetric hetero-waveguide

    NASA Astrophysics Data System (ADS)

    Li, T.; Hao, E.; Zhang, Yu

    2015-07-01

    By introducing an asymmetric hetero-waveguide into the epitaxial structure of a diode laser, a 6.21-W output is achieved at a wavelength of 1060 nm. A different design in p- and n-confinement, based on optimisation of energy bands, is used to reduce voltage loss and meet the requirement of high power and high wall-plug efficiency. A 1060-nm diode laser with a single quantum well and asymmetric hetero-structure waveguide is fabricated and analysed. Measurement results show that the asymmetric hetero-structure waveguide can be efficiently used for reducing voltage loss and improving the confinement of injection carriers and wall-plug efficiency.

  4. Temperature evaluation of dental implant surface irradiated with high-power diode laser.

    PubMed

    Rios, F G; Viana, E R; Ribeiro, G M; González, J C; Abelenda, A; Peruzzo, D C

    2016-09-01

    The prevalence of peri-implantitis and the absence of a standard approach for decontamination of the dental implant surface have led to searches for effective therapies. Since the source of diode lasers is portable, has reduced cost, and does not cause damage to the titanium surface of the implant, high-power diode lasers have been used for this purpose. The effect of laser irradiation on the implants is the elevation of the temperature surface. If this elevation exceeds 47 °C, the bone tissue is irreversibly damaged, so for a safety therapy, the laser parameters should be controlled. In this study, a diode laser of GaAsAl was used to irradiate titanium dental implants, for powers 1.32 to 2.64 W (real) or 2.00 to 4.00 W (nominal), in continuous/pulsed mode DC/AC, with exposure time of 5/10 s, with/without air flow for cooling. The elevation of the temperature was monitored in real time in two positions: cervical and apical. The best results for decontamination using a 968-nm diode laser were obtained for a power of 1.65 and 1.98 W (real) for 10 s, in DC or AC mode, with an air flow of 2.5 l/min. In our perspective in this article, we determine a suggested approach for decontamination of the dental implant surface using a 968-nm diode laser. PMID:27365109

  5. Optical injection and spectral filtering of high-power ultraviolet laser diodes.

    PubMed

    Schäfer, V M; Ballance, C J; Tock, C J; Lucas, D M

    2015-09-15

    We demonstrate injection locking of high-power laser diodes operating at 397 nm. We achieve stable operation with an injection power of ∼100  μW and a slave laser output power of up to 110 mW. We investigate the spectral purity of the slave laser light via photon scattering experiments on a single trapped (40)Ca(+) ion. We show that it is possible to achieve a scattering rate indistinguishable from that of monochromatic light by filtering the laser light with a diffraction grating to remove amplified spontaneous emission. PMID:26371912

  6. High-power laser diodes based on InGaAsP alloys

    NASA Astrophysics Data System (ADS)

    Razeghi, Manijeh

    1994-06-01

    HIGH-POWER, high-coherence solid-state lasers, based on dielectric materials such as ruby or Nd:YAG (yttrium aluminium garnet), have many civilian and military applications. The active media in these lasers are insulating, and must therefore be excited (or `pumped') by optical, rather than electrical, means. Conventional gas-discharge lamps can be used as the pumping source, but semiconductor diode lasers are more efficient, as their wavelength can be tailored to match the absorption properties of the lasing material. Semiconducting AlGaAs alloys are widely used for this purpose1, 2, but oxidation of the aluminium and the spreading of defects during device operation limit the lifetime of the diodes3, and hence the reliability of the system as a whole. Aluminium-free InGaAsP compounds, on the other hand, do not have these lifetime-limiting properties4-8. We report here the fabrication of high-power lasers based on InGaAsP (lattice-matched to GaAs substrates), which operate over the same wavelength range as conventional AlGaAs laser diodes and show significantly improved reliability. The other optical and electrical properties of these diodes are either comparable or superior to those of the AlGaAs system.

  7. Improvements of high-power diode laser line generators open up new application fields

    NASA Astrophysics Data System (ADS)

    Meinschien, J.; Bayer, A.; Bruns, P.; Aschke, L.; Lissotschenko, V. N.

    2009-02-01

    Beam shaping improvements of line generators based on high power diode lasers lead to new application fields as hardening, annealing or cutting of various materials. Of special interest is the laser treatment of silicon. An overview of the wide variety of applications is presented with special emphasis of the relevance of unique laser beam parameters like power density and beam uniformity. Complementary to vision application and plastic processing, these new application markets become more and more important and can now be addressed by high power diode laser line generators. Herewith, a family of high power diode laser line generators is presented that covers this wide spectrum of application fields with very different requirements, including new applications as cutting of silicon or glass, as well as the beam shaping concepts behind it. A laser that generates a 5m long and 4mm wide homogeneous laser line is shown with peak intensities of 0.2W/cm2 for inspection of railway catenaries as well as a laser that generates a homogeneous intensity distribution of 60mm x 2mm size with peak intensities of 225W/cm2 for plastic processing. For the annealing of silicon surfaces, a laser was designed that generates an extraordinary uniform intensity distribution with residual inhomogeneities (contrast ratio) of less than 3% over a line length of 11mm and peak intensities of up to 75kW/cm2. Ultimately, a laser line is shown with a peak intensity of 250kW/cm2 used for cutting applications. Results of various application tests performed with the above mentioned lasers are discussed, particularly the surface treatment of silicon and the cutting of glass.

  8. High-Power Broad-Area Diode Lasers and Laser Bars

    NASA Astrophysics Data System (ADS)

    Erbert, Goetz; Baerwolff, Arthur; Sebastian, Juergen; Tomm, Jens

    This review presents the basic ideas and some examples of the chip technology of high-power diode lasers ( λ= 650,-1060,) in connection with the achievements of mounted single-stripe emitters in recent years.In the first section the optimization of the epitaxial layer structure for a low facet load and high conversion efficiency is discussed. The so-called broadened waveguide Large Optical Cavity (LOC) concept is described and also some advantages and disadvantages of Al-free material. The next section deals with the processing steps of epitaxial wafers to make single emitters and bars. Several possibilities to realize contact windows (implantation, insulators, and wet chemical oxidation) and laser mirrors are presented. The impact of heating in the CW regime and some aspects of reliability are the following topics. The calculation of thermal distributions in diode lasers, which shows the need for sophisticated mounting, will be given. In the last part the current state-of-the-art of single-stripe emitters will be reviewed.

  9. High-power fiber-coupled 100W visible spectrum diode lasers for display applications

    NASA Astrophysics Data System (ADS)

    Unger, Andreas; Küster, Matthias; Köhler, Bernd; Biesenbach, Jens

    2013-02-01

    Diode lasers in the blue and red spectral range are the most promising light sources for upcoming high-brightness digital projectors in cinemas and large venue displays. They combine improved efficiency, longer lifetime and a greatly improved color space compared to traditional xenon light sources. In this paper we report on high-power visible diode laser sources to serve the demands of this emerging market. A unique electro-optical platform enables scalable fiber coupled sources at 638 nm with an output power of up to 100 W from a 400 μm NA0.22 fiber. For the blue diode laser we demonstrate scalable sources from 5 W to 100 W from a 400 μm NA0.22 fiber.

  10. Reviews of a Diode-Pumped Alkali Laser (DPAL): a potential high powered light source

    NASA Astrophysics Data System (ADS)

    Cai, He; Wang, You; Han, Juhong; An, Guofei; Zhang, Wei; Xue, Liangping; Wang, Hongyuan; Zhou, Jie; Gao, Ming; Jiang, Zhigang

    2015-03-01

    Diode pumped alkali vapor lasers (DPALs) were first developed by in W. F. Krupke at the beginning of the 21th century. In the recent years, DPALs have been rapidly developed because of their high Stokes efficiency, good beam quality, compact size and near-infrared emission wavelengths. The Stokes efficiency of a DPAL can achieve a miraculous level as high as 95.3% for cesium (Cs), 98.1% for rubidium (Rb), and 99.6% for potassium (K), respectively. The thermal effect of a DPAL is theoretically smaller than that of a normal diode-pumped solid-state laser (DPSSL). Additionally, generated heat of a DPAL can be removed by circulating the gases inside a sealed system. Therefore, the thermal management would be relatively simple for realization of a high-powered DPAL. In the meantime, DPALs combine the advantages of both DPSSLs and normal gas lasers but evade the disadvantages of them. Generally, the collisionally broadened cross sections of both the D1 and the D2 lines for a DPAL are much larger than those for the most conventional solid-state, fiber and gas lasers. Thus, DPALs provide an outstanding potentiality for realization of high-powered laser systems. It has been shown that a DPAL is now becoming one of the most promising candidates for simultaneously achieving good beam quality and high output power. With a lot of marvelous merits, a DPAL becomes one of the most hopeful high-powered laser sources of next generation.

  11. Sequential description of the catastrophic optical damage of high power laser diodes

    NASA Astrophysics Data System (ADS)

    Souto, J.; Pura, J. L.; Torres, A.; Jiménez, J.; Bettiati, M.; Laruelle, F. J.

    2016-03-01

    Cathodoluminescence (CL) analysis of high power laser diodes permits to reveal the main defects issued from the catastrophic optical degradation (COD). These defects are revealed as discontinuous dark lines along the ridge. The different levels of damage are analysed, and a thermomechanical model taking account of the thermal and mechanical properties of the laser structure is settled up. In this model the COD is described as a local temperature enhancement, which generates thermal stresses leading to the generation of dislocations, which are responsible for the degradation of the thermal conductivity of the of the active zone of the laser.

  12. High-power operation of coherently coupled tapered laser diodes in an external cavity

    NASA Astrophysics Data System (ADS)

    Schimmel, G.; Doyen, I.; Janicot, S.; Hanna, M.; Georges, P.; Lucas-Leclin, G.; Decker, J.; Crump, P.; Erbert, G.; Kaunga-Nyirenda, S.; Moss, D.; Bull, S.; Larkins, E. C.; Witte, U.; Traub, M.

    2016-03-01

    We demonstrate a rear-side phase-locking architecture with two high-brightness diode lasers. This technique is based on the passive phase-locking of emitters in an external cavity on their rear facet, and their coherent combination on the front facet. Two high-brightness high-power tapered laser diodes are coherently combined using a Michelson-based cavity. The combining efficiency is above 80% and results in an output power of 6.7 W in a nearly diffraction-limited beam. The rear-side architecture is then used with a laser bar of 5 tapered emitters using an interferometric extended cavity, based on a diffractive optical element. We describe the experimental evaluation of the diffractive optical element, and the phase-locked operation of the laser bar.

  13. High Power Laser Diode Arrays for 2-Micron Solid State Coherent Lidars Applications

    NASA Technical Reports Server (NTRS)

    Amzajerdian, Farzin; Meadows, Byron; Kavaya, Michael J.; Singh, Upendra; Sudesh, Vikas; Baker, Nathaniel

    2003-01-01

    Laser diode arrays are critical components of any diode-pumped solid state laser systems, constraining their performance and reliability. Laser diode arrays (LDAs) are used as the pump source for energizing the solid state lasing media to generate an intense coherent laser beam with a high spatial and spectral quality. The solid state laser design and the characteristics of its lasing materials define the operating wavelength, pulse duration, and power of the laser diodes. The pump requirements for high pulse energy 2-micron solid state lasers are substantially different from those of more widely used 1-micron lasers and in many aspects more challenging [1]. Furthermore, the reliability and lifetime demanded by many coherent lidar applications, such as global wind profiling from space and long-range clear air turbulence detection from aircraft, are beyond the capability of currently available LDAs. In addition to the need for more reliable LDAs with longer lifetime, further improvement in the operational parameters of high power quasi-cw LDAs, such as electrical efficiency, brightness, and duty cycle, are also necessary for developing cost-effective 2-micron coherent lidar systems for applications that impose stringent size, heat dissipation, and power constraints. Global wind sounding from space is one of such applications, which is the main driver for this work as part of NASA s Laser Risk Reduction Program. This paper discusses the current state of the 792 nm LDA technology and the technology areas being pursued toward improving their performance. The design and development of a unique characterization facility for addressing the specific issues associated with the LDAs for pumping 2-micron coherent lidar transmitters and identifying areas of technological improvement will be described. Finally, the results of measurements to date on various standard laser diode packages, as well as custom-designed packages with potentially longer lifetime, will be reported.

  14. High power diode pumped solid state laser development at Lawrence Livermore National Laboratory

    SciTech Connect

    Solarz, R.; Albrecht, G.; Hackel, L.

    1994-03-01

    The authors recent developments in high powered diode pumped solid state lasers at Lawrence Livermore National Laboratory. Over the past year the authors have made continued improvements to semiconductor pump array technology which includes the development of higher average power and lower cost pump modules. They report the performance of high power AlGaAs, InGaAs, and AlGaInP arrays. They also report on improvement to the integrated micro-optics designs in conjunction with lensing duct technology which gives rise to very high performance end pumping designs for solid state lasers which have major advantages which they detail. Substantial progress on beam quality improvements to near the diffraction limit at very high power have also been made and will be reported. They also will discuss recent experiments on high power non-linear materials for q-switches, harmonic converters, and parametric oscillators. Advances in diode pumped devices at LLNL which include tunable Cr:LiSrAlF{sub 6}, mid-IR Er:YAG, holmium based lasers and other developments will also be outlined. Concepts for delivering up to 30 kilowatts of average power from a DPSSL oscillator will be described.

  15. Thermal modelling of high-power laser diodes mounted using various types of submounts

    SciTech Connect

    Bezotosnyi, V V; Krokhin, O N; Oleshchenko, V A; Pevtsov, V F; Popov, Yu M; Cheshev, E A

    2014-10-31

    Using three-dimensional thermal modelling of a highpower 980-nm laser diode with a stripe contact width of 100 μm as an example, we analyse the thermal parameters of high-power laser diodes mounted using submounts. We consider a range of thermal conductivities of submounts that includes parameters of widely used thermal compensators based on AlN, BeO and SiC, as well as on CuW and CuMo composites and polycrystalline and single-crystal synthetic diamond with high thermal conductivity. Taking into account experimental overall efficiency vs. pump current data, we calculate the temperature of the active layer as a function of the width, thickness and thermal conductivity of the submount at thermal loads corresponding to cw output powers of 10, 15 and 20 W. (lasers)

  16. Emission parameters and thermal management of single high-power 980-nm laser diodes

    SciTech Connect

    Bezotosnyi, V V; Krokhin, O N; Oleshchenko, V A; Pevtsov, V F; Popov, Yu M; Cheshev, E A

    2014-02-28

    We report emission parameters of high-power cw 980-nm laser diodes (LDs) with a stripe contact width of 100 μm. On copper heat sinks of the C-mount type, a reliable output power of 10 W is obtained at a pump current of 10 A. Using a heat flow model derived from analysis of calculated and measured overall efficiencies at pump currents up to 20 A, we examine the possibility of raising the reliable power limit of a modified high-power LD mounted on heat sinks of the F-mount type using submounts with optimised geometric parameters and high thermal conductivity. The possibility of increasing the maximum reliable cw output power to 20 W with the use of similar laser crystals is discussed. (lasers)

  17. A study of laser ablation propulsion using polyoxymethelyne and a high power diode laser

    NASA Astrophysics Data System (ADS)

    Kolesar, Michael D.

    With an increased interest by universities, government and commercial groups in using constellations of pico and nano satellites, the need for micro-thrusters to aid in the station-keeping capabilities has become strong. This report examines using polymers and a laser to ablate material as a potential propulsion option for station-keeping. Homopolymer polyoxymethelyne (POM), commonly known as Delrin(TM), was tested as a fuel for a high powered (20 Watt 980 nm) solid state diode laser ablation thruster to be used for station-keeping on pico and nano sized satellites. The experiments required a partial vacuum to reduce the effects of air decomposition and remove water vapor during the ablation event. The vacuum chamber, shadowgraph, and an impulse measurement system were all designed and built around the 20-Watt laser. Three different sample thicknesses were tested (.005", .010", and .020") to determine the behavior of the polymer. The laser was focused onto the POM sample, which was mounted to a load cell and calibrated to measure the impulse of the system imparted by the laser pulse. The calculated thrust values ranged from 600 microN to 1300 microN with a high uncertainty due to the small sample size. The exhaust plume from the ablation event was captured using a shadowgraph. A low velocity was recorded because the chamber was not a complete vacuum, causing the exhaust plume to collide with the air molecules in the test chamber. However the load cell results suggested that 1.30 mN per burst can be produced with an uncertainty of 30%. With the work outlined in this paper, POM shows the promise and challenge of being a good candidate as a fuel material. POM warrants further development and investment as a fuel to be used with a laser ablation micro-thruster.

  18. Advances in 808nm high power diode laser bars and single emitters

    NASA Astrophysics Data System (ADS)

    Morales, J.; Lehkonen, S.; Liu, G.; Schleuning, D.; Acklin, B.

    2016-03-01

    Key applications for 780-830nm high power diode lasers include the pumping of various gas, solid state, and fiber laser media; medical and aesthetic applications including hair removal; direct diode materials processing; and computer-to-plate (CtP) printing. Many of these applications require high brightness fiber coupled beam delivery, in turn requiring high brightness optical output at the bar and chip level. Many require multiple bars per system, with aggregate powers on the order of kWs, placing a premium on high power and high power conversion efficiency. This paper presents Coherent's recent advances in the production of high power, high brightness, high efficiency bars and chips at 780-830nm. Results are presented for bars and single emitters of various geometries. Performance data is presented demonstrating peak power conversion efficiencies of 63% in CW mode. Reliability data is presented demonstrating <50k hours lifetime for products including 60W 18% fill factor and 80W 28% fill factor conduction cooled bars, and <1e9 shots lifetime for 500W QCW bars.

  19. Advancements in high-power diode laser stacks for defense applications

    NASA Astrophysics Data System (ADS)

    Pandey, Rajiv; Merchen, David; Stapleton, Dean; Patterson, Steve; Kissel, Heiko; Fassbender, Wilhlem; Biesenbach, Jens

    2012-06-01

    This paper reports on the latest advancements in vertical high-power diode laser stacks using micro-channel coolers, which deliver the most compact footprint, power scalability and highest power/bar of any diode laser package. We present electro-optical (E-O) data on water-cooled stacks with wavelengths ranging from 7xx nm to 9xx nm and power levels of up to 5.8kW, delivered @ 200W/bar, CW mode, and a power-conversion efficiency of >60%, with both-axis collimation on a bar-to-bar pitch of 1.78mm. Also, presented is E-O data on a compact, conductively cooled, hardsoldered, stack package based on conventional CuW and AlN materials, with bar-to-bar pitch of 1.8mm, delivering average power/bar >15W operating up to 25% duty cycle, 10ms pulses @ 45C. The water-cooled stacks can be used as pump-sources for diode-pumped alkali lasers (DPALs) or for more traditional diode-pumped solid-state lasers (DPSSL). which are power/brightness scaled for directed energy weapons applications and the conductively-cooled stacks as illuminators.

  20. Recent advances in actively cooled high-power laser diode bars

    NASA Astrophysics Data System (ADS)

    Ostrom, Nels P.; Roh, S. D.; Grasso, Daniel M.; Kane, Thomas J.

    2007-02-01

    In order to meet the ever increasing demands of many high power laser diode customers, Nuvonyx has worked to improve a number of key metrics of the diode laser package. The most often challenged specifications are power per bar, efficiency, and reliability in both hard pulse and constant current mode. In response to these requests, Nuvonyx has worked to offer commercial component devices in excess of 100 and 150 watts per bar package in multiple wavelengths. The packages are routinely combined to form single stacks that generate greater than 3.5 kilowatts each and two-dimensional arrays which produce light in excess of 10 kilowatts. These parts all demonstrate predicted lifetimes in excess of 10,000 hours. The micro-channel cooled heat sink has also been improved by closer matching the coefficient of thermal expansion of the cooler to the laser diode bar, which allows for harder solders such as gold-tin to be employed. All of this work has helped to meet the specifications of the most demanding laser diode customers.

  1. Bright laser source with high-power single-mode-emitting diode laser stacked array assembly and fiber coupling

    NASA Astrophysics Data System (ADS)

    Forrer, M.; Moser, H.; Gisler, T.; Spinola Durante, G.; Pierer, J.; Bosshard, C.; Krejci, M.; Lichtenstein, N.

    2011-03-01

    Single-mode-emitting high-power diode laser arrays (SM-HPDLA) are available industrially with more than 50 W emission power per bar. Based on this platform an expandable prototype solution is realized for fiber coupling of a stacked array with more than 100 W to an optical fiber with diameter of 200 micron and NA of 0.11. Advanced methods of controlled assembly of micro-optics by infrared laser-soldering have been developed therefore. We present a compact and scalable concept with scalability on 2 internal and 2 external factors. Internal factors are the increasing beam quality and power stability of high-power single-mode-emitting arrays and the improved assembly accuracy for diode bar and micro-optics. External factors are the interlaced coupling of stacked beam emission from the stacked array and the further option to use optimized polarisation coupling with several diode laser stacks.

  2. High power cascade diode lasers emitting near 2 μm

    NASA Astrophysics Data System (ADS)

    Hosoda, Takashi; Feng, Tao; Shterengas, Leon; Kipshidze, Gela; Belenky, Gregory

    2016-03-01

    High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumping scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.

  3. Generation of neutral atomic beams utilizing photodetachment by high power diode laser stacks.

    PubMed

    O'Connor, A P; Grussie, F; Bruhns, H; de Ruette, N; Koenning, T P; Miller, K A; Savin, D W; Stützel, J; Urbain, X; Kreckel, H

    2015-11-01

    We demonstrate the use of high power diode laser stacks to photodetach fast hydrogen and carbon anions and produce ground term neutral atomic beams. We achieve photodetachment efficiencies of ∼7.4% for H(-) at a beam energy of 10 keV and ∼3.7% for C(-) at 28 keV. The diode laser systems used here operate at 975 nm and 808 nm, respectively, and provide high continuous power levels of up to 2 kW, without the need of additional enhancements like optical cavities. The alignment of the beams is straightforward and operation at constant power levels is very stable, while maintenance is minimal. We present a dedicated photodetachment setup that is suitable to efficiently neutralize the majority of stable negative ions in the periodic table. PMID:26628128

  4. Methods for improving the beam quality of high-power diode lasers

    NASA Astrophysics Data System (ADS)

    Raab, Volker; Ostermeyer, Martin; Menzel, Ralf

    2000-04-01

    Current commercially available diode lasers with output powers above a few watts lack beam quality, i.e. they have only limited possibility of small foci in combination with long Rayleigh lengths. Recent advances in coherent coupling of such lasers open view to a new generation of high power, high beam quality, low cost lasers suitable for a wide range of technical applications such as microshaping or cutting. Therefore, we performed experiments to couple the 25 diode lasers of a bar with specially coated low-reflection front facets. Mutual coherence can be improved in external resonators as opposed to the internal resonator absent in our case. Additional elements like mode stops can improve beam quality. Here we present results on the coupling of gain- guided broad-area diode lasers in external resonators, both of single emitters and bars of 25 emitters. In the single emitter case we achieved output powers up to 0.8 W at a beam quality of M2 equals 16 or 0.4 W with M2 equals 3.5 along slow axis. For the bars we achieved 10 W with M2 equals 304.

  5. Numerical simulations of novel high-power high-brightness diode laser structures

    NASA Astrophysics Data System (ADS)

    Boucke, Konstantin; Rogg, Joseph; Kelemen, Marc T.; Poprawe, Reinhart; Weimann, Guenter

    2001-07-01

    One of the key topics in today's semiconductor laser development activities is to increase the brightness of high-power diode lasers. Although structures showing an increased brightness have been developed specific draw-backs of these structures lead to a still strong demand for investigation of alternative concepts. Especially for the investigation of basically novel structures easy-to-use and fast simulation tools are essential to avoid unnecessary, cost and time consuming experiments. A diode laser simulation tool based on finite difference representations of the Helmholtz equation in 'wide-angle' approximation and the carrier diffusion equation has been developed. An optimized numerical algorithm leads to short execution times of a few seconds per resonator round-trip on a standard PC. After each round-trip characteristics like optical output power, beam profile and beam parameters are calculated. A graphical user interface allows online monitoring of the simulation results. The simulation tool is used to investigate a novel high-power, high-brightness diode laser structure, the so-called 'Z-Structure'. In this structure an increased brightness is achieved by reducing the divergency angle of the beam by angular filtering: The round trip path of the beam is two times folded using internal total reflection at surfaces defined by a small index step in the semiconductor material, forming a stretched 'Z'. The sharp decrease of the reflectivity for angles of incidence above the angle of total reflection leads to a narrowing of the angular spectrum of the beam. The simulations of the 'Z-Structure' indicate an increase of the beam quality by a factor of five to ten compared to standard broad-area lasers.

  6. Fabrication of High power, High-Efficiency Linear Array Diode Lasers by Pulse Anodic Oxidation

    NASA Astrophysics Data System (ADS)

    Gao, Xin; Zhang, Jing; Li, Hui; Qu, Yi; Bo, Baoxue

    2006-09-01

    InGaAlAs/AlGaAs/GaAs double-quantum-well (DQW) linear array diode lasers with asymmetric wide waveguide have been successfully fabricated by pulse anodic oxidation upon molecular beam epitaxy material growth. High-efficiency and high-power quasi-continuous-wave (QCW) output has been realized at 808 nm wavelength. The threshold current and slope efficiency of the prepared high-fill-factor QCW devices are 24 A and 1.25 A/W, respectively, and a maximum wall-plug efficiency of 51% has been achieved.

  7. High-power CW diode-laser-array-pumped solid-state lasers and efficient nonlinear optical frequency

    NASA Astrophysics Data System (ADS)

    Shine, Robert J.; Byer, Robert L.

    1994-01-01

    During the interim period of this bridging contract, we have continued to work on the development of high-power cw diode-laser-array-pumped solid-state lasers. Towards that end, we have built lower power lasers in order to test individual components needed for the high-power laser, specifically we have built a 1 watt ring laser and a 5 watt slab laser. The 1 watt laser was used to study the injection locking process while assembling all the necessary electronics. We have demonstrated that it is possible to injection lock a diode-pumped laser using a single piezo-mounted mirror due to the lower intrinsic laser noise compared to an arc-lamp-pumped system. This allows us to optimize the injection locking servo loop and build a more stable locking system. The 5 watt laser was used as a test bed to find a practical way to mount the slab laser while minimizing the losses that occur at the total internal reflection (TIR) points in the slab. After trying many different means of protecting the TIR surfaces, we found that a new product from DuPont, Teflon AF 1600, has all the properties needed to provide a low loss protective coating. Using this material, the laser had a cavity loss of below 2%, which allowed for efficient operation of the laser in a side-pumped design. This laser produced 5 watts of output power with a slope efficiency near 20%.

  8. Fiber coupling of high-power diode laser stack for direct polycarbonate processing

    NASA Astrophysics Data System (ADS)

    Vidal, E.; Quintana, I.; Azkorbebeitia, U.; Mendez, E.; Viera, G.; Galán, M.; Otaduy, D.

    2010-02-01

    We present a novel optical system for fiber coupling of a commercial high power diode laser stack and the application of this laser system to transmission welding of engineering thermoplastics. The diode laser stack is made up of two 20% fill factor bars, emitting at 808 nm and with a total maximum output power of 120W CW. The stack was collimated using FSAC micro-optics lenses in the fast and slow axis, with a full angle divergence of <4mrad and <25mrad respectively. The optical design and simulations were carried out using ZEMAX®. Based on the design we built an optical set up, which is divided in two subsystems. The first one collimates the laser beam in order to achieve the best focus and couple it into the 400μm core fiber with NA0.22 and 70% efficiency. The second subsystem is designed for beam conformation after the fiber output, using collimation and beam shaping to have a Gaussian beam profile on the work piece. The laser system was applied to study the welding of polycarbonate plastics, based on the effects of selected welding parameters on the seam geometry and surface integrity. The quality of the spot welding has been analyzed obtaining welded seams with a mean diameter about 500-600μm, preserving the good technological properties of the thermoplastic considered in this work. The results show that we have successfully developed a novel laser system which is highly efficient for thermoplastics processing.

  9. Reliability of High Power Laser Diode Arrays Operating in Long Pulse Mode

    NASA Technical Reports Server (NTRS)

    Amzajerdian, Farzin; Meadows, Byron L.; Barnes, Bruce W.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.; Baker, Nathaniel R.

    2006-01-01

    Reliability and lifetime of quasi-CW laser diode arrays are greatly influenced by their thermal characteristics. This paper examines the thermal properties of laser diode arrays operating in long pulse duration regime.

  10. High power, high efficiency, 2D laser diode arrays for pumping solid state lasers

    SciTech Connect

    Rosenberg, A.; McShea, J.C.; Bogdan, A.R.; Petheram, J.C.; Rosen, A.

    1987-11-01

    This document reports the current performance of 2D laser diode arrays operating at 770 nm and 808 nm for pumping promethium and neodymium solid state lasers, respectively. Typical power densities are in excess of 2kw/cm/sup 2/ with overall efficiencies greater than 30%.

  11. High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

    NASA Technical Reports Server (NTRS)

    Ott, Melanie N.; Eegholm, Niels; Stephen, Mark; Leidecker, Henning; Plante, Jeannette; Meadows, Byron; Amzajerdian, Farzin; Jamison, Tracee; LaRocca, Frank

    2006-01-01

    High-power laser diode arrays (LDAs) are used for a variety of space-based remote sensor laser programs as an energy source for diode-pumped solid-state lasers. LDAs have been flown on NASA missions including MOLA, GLAS and MLA and have continued to be viewed as an important part of the laser-based instrument component suite. There are currently no military or NASA-grade, -specified, or - qualified LDAs available for "off-the-shelf" use by NASA programs. There has also been no prior attempt to define a standard screening and qualification test flow for LDAs for space applications. Initial reliability studies have also produced good results from an optical performance and stability standpoint. Usage experience has shown, howeve that the current designs being offered may be susceptible to catastrophic failures due to their physical construction (packaging) combined with the electro-optical operational modes and the environmental factors of space application. design combined with operational mode was at the root of the failures which have greatly reduced the functionality of the GLAS instrument. The continued need for LDAs for laser-based science instruments and past catastrophic failures of this part type demand examination of LDAs in a manner which enables NASA to select, buy, validate and apply them in a manner which poses as little risk to the success of the mission as possible.

  12. Reliability comparison of GaAlAs/GaAs and aluminum-free high-power laser diodes

    NASA Astrophysics Data System (ADS)

    Pendse, D. R.; Chin, Aland K.; Dabkowski, Ferdynand P.; Clausen, Edward M., Jr.

    1998-08-01

    Aluminum-free laser diodes are InGaAsP/GaAs devices whose epitaxial layers do not contain aluminum. Studies comparing the GaAslAs/GaAs and InGaAsP/GaAs high power laser diodes allegedly indicate that aluminum-free lasers are more reliable due to a reduction of dark-line defects, sudden failures, and gradual degradation. The improved reliability of aluminum-free lasers is presumed to result from the elimination of oxidation of the aluminum-containing epitaxial layers of the laser facets. In this presentation, the performance and reliability of GaAlAs/GaAs and InGaAsP/GaAs high power laser diodes will be reviewed and compared. The present data shows that high reliable GaAlAs/GaAs lasers can be produced with good manufacturing practices.

  13. Developments in laser joining and welding of plastics using high-power laser diodes

    NASA Astrophysics Data System (ADS)

    Hoult, Tony; Ong, Raymond

    2002-02-01

    Diode lasers are now being employed in industry for a range of applications, in particular they are starting to be used as alternatives to conventional techniques for thermal joining of plastics. This is being assisted by the use of improved reliability aluminum-free diodes and diode laser systems, partly due to a better understanding of failure mechanisms. The laser welding and related techniques are dependent on transmission of part of an infra-red beam through the upper layer of a joint and semi-quantitative assessment of this is required for specific applications. The technique is applicable not only to high average powers, but also to very low average power, in this regime delicate thin-walled components may be joined. Recent developments using derivatives of this technique have shown that a wide range of similar and dissimilar material combinations may be joined.

  14. Removal of graffiti from quarry stone by high power diode laser

    NASA Astrophysics Data System (ADS)

    Penide, J.; Quintero, F.; Riveiro, A.; Sánchez-Castillo, A.; Comesaña, R.; del Val, J.; Lusquiños, F.; Pou, J.

    2013-04-01

    The integrity of architectural monuments in urban areas is threatened by numerous attacks, among which the graffiti is sometimes one of the most important. Particularly, Morelia's historic center (Mexico) (appointed World Heritage Site by UNESCO) suffers, for some years, a high number of graffiti. Most of these monuments in Morelia were built using a local stone called Pink Morelia Quarry. In this paper, we present the results of a study on the feasibility to remove the graffiti from Pink Morelia Quarry using a high power diode laser treatment. An extensive experimental analysis of the operating conditions has been carried out leading to successful results. The optimal parameters to achieve a total removal of graffiti have been determined. We concluded that continuous wave regime leads to better results than modulated wave regime, additionally, a two laser passes process demonstrated a high performance.

  15. Spectroscopic analysis of packaging concepts for high-power diode laser bars

    NASA Astrophysics Data System (ADS)

    Hempel, Martin; Ziegler, Mathias; Schwirzke-Schaaf, Sandy; Tomm, Jens W.; Jankowski, Denny; Schröder, Dominic

    2012-05-01

    Double-side cooled high-power diode laser bars packaged by different techniques on different types of passive heat sinks are analyzed in terms of packaging-induced strain. Reference data from standard devices being single-side cooled only and packaged by conventional soft and hard soldering are also presented. Thermal profiling across the devices complements the results. The most suitable packaging architecture and technique for double-side cooled bars is identified. Measurements of the laser emission near field and electroluminescence pattern provide direct reference to the functionality of the devices. Furthermore, a type of cross calibration of the methods used for strain analysis is made, since all techniques are applied to the same set of bars. This involves micro photoluminescence, micro Raman, and degree-of-polarization electroluminescence spectroscopy.

  16. High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm

    NASA Astrophysics Data System (ADS)

    Kallenbach, Senta; Kelemen, Marc T.; Aidam, Rolf; Losch, Rainer; Kaufel, Gudrun; Mikulla, Michael; Weimann, Guenter

    2005-04-01

    High-power spatially single-mode diode lasers at 1.4 - 1.5 μm wavelength are of interest as pump lasers for Raman and rare-earth doped fiber amplifiers as well as for material processing and for Light Detection and Ranging (LIDAR) at eye-safe wavelengths. A cost-efficient way to realize high-power high-brightness devices is the tapered resonator concept. We demonstrate InGaAsP/InP based diode lasers with compressively strained quantum wells and wavelengths around 1480 nm which were grown by solid source MBE. From broad area lasers with variations in quantum well number and waveguide layer thickness, parameters for the logarithmic gain model are deduced. With their implementation in 2-dimensional BPM simulations, an optimized resonator geometry is derived. Devices employ a 500 μm ridge section followed by a 2000 μm taper section with 6° angle. Continuous-wave (cw) output powers reach more than 1.5 W. Beam quality is characterized in terms of near field and far field distribution, M2, and astigmatism. An excellent agreement is found between measurement and simulation. For narrow-linewidth operation, devices are provided with anti-reflection coatings on both facets and spectrally stabilized with an external grating. We achieve 0.7 W single mode power and a side mode suppression ratio (SMSR) of 42 dB. Reliability is tested in terms of facet stability and lifetime. Pulsed measurements reveal a power stability up to more than 5 MW/cm2. From cw aging tests at 1 W output power, lifetimes of about 6,000 h are extrapolated.

  17. High-power high-brightness 808nm QCW laser diode mini bars

    NASA Astrophysics Data System (ADS)

    Huang, Hua; Wang, Jun; DeVito, Mark; Bao, Ling; Hodges, Aaron; Zhang, Shiguo; Wise, Damian; Grimshaw, Mike; Xu, Dapeng; Bai, Chendong

    2010-02-01

    A new class of high power high brightness 808 nm QCW laser diode mini bars has been developed. With nLight's nXLT facet passivation technology and improvements in epitaxial structure, mini bars of 3 mm bar width with high efficiency design have tested to over 280 W peak power with peak efficiency over 64% on conduction cooled CS packages, equivalent to output power density near 130 mW/μm. These mini laser bars open up new applications as compact, portable, and low current pump sources. Liftests have been carried out on conduction cooled CS packages and on QCW stacks. Over 370 million (M) shots lifetest with high efficiency design has been demonstrated on CS so far without failure, and over 80 M shots on QCW stacks with accelerated stress lifetest have also proven high reliability on mini bars with high temperature design. Failure analysis determined that the failure mechanism was related to bulk defects, showing that mini laser bars are not prone to facet failure, which is consistent with the large current pulse test and failure analysis on high power single emitters.

  18. LASER BIOLOGY AND MEDICINE: Medical instruments based on high-power diode and fibre lasers

    NASA Astrophysics Data System (ADS)

    Gapontsev, V. P.; Minaev, V. P.; Savin, V. I.; Samartsev, I. E.

    2002-11-01

    The characteristics and possible applications of scalpels based on diode and fibre lasers emitting at 0.97, 1.06, 1.56, and 1.9 μm, which are produced and developed by the IRE-Polyus Co., are presented. The advantages of such devices and the possibilities for increasing their output power and extending their spectral range are shown.

  19. Effects of atmospheric transmission of high power diode pumped alkali lasers

    NASA Astrophysics Data System (ADS)

    Rice, Christopher A.; Perram, Glen P.

    2013-03-01

    As diode pumped alkali lasers (DPAL) are scaled to powers exceeding 1 kW, the effects of atmospheric transmission, including thermal blooming, is explored. The cesium and rubidium lasers operate near 894 and 795 nm, respectively, in the vicinity of atmospheric water vapor absorption lines. The potassium laser line lies in the high rotational limit of the O2 X-b (0,0) band near 770 nm. We assess the effects of atmospheric transmission on high power propagation using the High Energy Laser End-to End Operational Simulation. HELEEOS uses the scaling laws of the Scaling the High energy laser And Relay Engagements (SHaRE) toolbox which is anchored to the wave optics code WaveTrain and all significant degradation effects, including thermal blooming due to molecular and aerosol absorption, scattering extinction, and optical turbulence, are represented in the model. The HELEEOS model enables the evaluation of uncertainty in low-altitude high energy laser engagements due to all major low altitude atmospheric effects to include physically-based representations of water clouds, fog, light rain, and aerosols. Worldwide seasonal, diurnal, and geographical spatial-temporal variability in key climatological parameters is organized into probability density function databases in HELEEOS using a variety of recently available resources to include the Extreme and Percentile Environmental Reference Tables (ExPERT) for 408 sites worldwide, the Surface Marine Gridded Climatology (SMGC) database which provides coverage over all ocean areas, the Master Database for Optical Turbulence Research in support of the Airborne Laser, and the Global Aerosol Data Set (GADS) used to provide worldwide aerosol densities. The spectral transmission model is anchored to field data from an open-path Tunable Diode Laser Absorption (TDLAS) system composed of narrow band (~300 kHz) diode laser fiber coupled to a 12" Ritchey-Chrétien transmit telescope. The ruggedized system has been field deployed and tested

  20. Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures

    NASA Astrophysics Data System (ADS)

    Kahraman, Abdullah; Gür, Emre; Aydınlı, Atilla

    2016-08-01

    We report on the correlation of atomic concentration profiles of diffusing species with the blueshift of the quantum well luminescence from both as-grown and impurity free quantum wells intermixed on actual large optical cavity high power laser diode structures. Because it is critical to suppress catastrophic optical mirror damage, sputtered SiO2 and thermally evaporated SrF2 were used both to enhance and suppress quantum well intermixing, respectively, in these (Al)GaAs large optical cavity structures. A luminescence blueshift of 55 nm (130 meV) was obtained for samples with 400 nm thick sputtered SiO2. These layers were used to generate point defects by annealing the samples at 950 °C for 3 min. The ensuing Ga diffusion observed as a shifting front towards the surface at the interface of the GaAs cap and AlGaAs cladding, as well as Al diffusion into the GaAs cap layer, correlates well with the observed luminescence blue shift, as determined by x-ray photoelectron spectroscopy. Although this technique is well-known, the correlation between the photoluminescence peak blue shift and diffusion of Ga and Al during impurity free quantum well intermixing on actual large optical cavity laser diode structures was demonstrated with both x ray photoelectron and photoluminescence spectroscopy, for the first time.

  1. Advances in high-power 9XXnm laser diodes for pumping fiber lasers

    NASA Astrophysics Data System (ADS)

    Skidmore, Jay; Peters, Matthew; Rossin, Victor; Guo, James; Xiao, Yan; Cheng, Jane; Shieh, Allen; Srinivasan, Raman; Singh, Jaspreet; Wei, Cailin; Duesterberg, Richard; Morehead, James J.; Zucker, Erik

    2016-03-01

    A multi-mode 9XXnm-wavelength laser diode was developed to optimize the divergence angle and reliable ex-facet power. Lasers diodes were assembled into a multi-emitter pump package that is fiber coupled via spatial and polarization multiplexing. The pump package has a 135μm diameter output fiber that leverages the same optical train and mechanical design qualified previously. Up to ~ 270W CW power at 22A is achieved at a case temperature ~ 30ºC. Power conversion efficiency is 60% (peak) that drops to 53% at 22A with little thermal roll over. Greater than 90% of the light is collected at < 0.12NA at 16A drive current that produces 3.0W/(mm-mr)2 radiance from the output fiber.

  2. High power 355 nm diode-pumped solid-state laser

    NASA Astrophysics Data System (ADS)

    Yu, Yang; Cheng, Chee Yuen; Peng, Xiaoyuan; Yong, Saw Soon

    2015-07-01

    This paper reported a high-power diode-pumped solid-state laser for material processing applications with a target of more than 60 ns pulse width at 355 nm. As known, long pulse width IR laser (around 70-100 ns) is difficult to get high conversion efficiency to UV since the peak power is more than 2 times lower than 20-30 ns laser. However, the unique long pulse width characteristic makes the laser an ideal tool for flexible PCB drilling with 30-50 μm holes and for cutting portable devices. Up to 52.2% IR to UV conversion efficiency was obtained by our novel intra-cavity harmonic generation cavity design. A 9.3W UV output at 30 kHz was demonstrated with compact intra-cavity sum frequency design. Special conduction cooling-designed LD side-pumped module provided 17.8 W fundamental IR output power with AOM q-switching. The UV output pulse width is 76 ns at 30 kHz and 140 ns at 70 kHz. The type I and type II phase matching LBOs were used for intra-cavity harmonic generations of 355 nm. The output characteristics of the IR and the harmonic generations varying with the pulse repetition rate were also investigated. The experimental results are in agreement with the theoretical modelling. This system will also be useful for many material processing applications such as PCB cutting and wafer scribing.

  3. High-power directly diode-pumped femtosecond Yb:KGW lasers with optimized parameters

    NASA Astrophysics Data System (ADS)

    Kim, G. H.; Yang, J.; Kulik, A. V.; Sall, E. G.; Chizhov, S. A.; Yashin, V. E.; Kang, U.

    2014-02-01

    We report a diode-pumped Yb:KGW laser that is capable of operating as a Q-switched oscillator or as a regenerative amplifier with average power of more than 20 W. The laser is based on a dual-crystal configuration where the pump thermal load is distributed over relatively long two crystals. It permits a sufficiently large number of passes with low passive losses and maximizes the energy extraction efficiency. The amplification bandwidth was extended by spectral combining of two Yb:KGW crystals with spectrally shifted gain maxima, that allows to mitigate spectral gain narrowing and provides pulse length down to 200 fs after compression in a stretcher-compressor module. The output power saturated with increasing pump power and output beam quality was defined by aberration of thermal lenses. Optimization of laser cavity allows us to compensate thermal lens partially and provide output beams with quality M2<1.2. Efficient frequency doubling and tripling of high-power femtosecond Yb:KGW laser is demonstrated in a nonlinear BBO crystal. Second or third harmonic generation with respective conversion efficiency of 55% or 24% was achieved in a single-pass configuration.

  4. Reliable high-power diode lasers: thermo-mechanical fatigue aspects

    NASA Astrophysics Data System (ADS)

    Klumel, Genady; Gridish, Yaakov; Szafranek, Igor; Karni, Yoram

    2006-02-01

    High power water-cooled diode lasers are finding increasing demand in biomedical, cosmetic and industrial applications, where repetitive cw (continuous wave) and pulsed cw operation modes are required. When operating in such modes, the lasers experience numerous complete thermal cycles between "cold" heat sink temperature and the "hot" temperature typical of thermally equilibrated cw operation. It is clearly demonstrated that the main failure mechanism directly linked to repetitive cw operation is thermo-mechanical fatigue of the solder joints adjacent to the laser bars, especially when "soft" solders are used. Analyses of the bonding interfaces were carried out using scanning electron microscopy. It was observed that intermetallic compounds, formed already during the bonding process, lead to the solders fatigue both on the p- and n-side of the laser bar. Fatigue failure of solder joints in repetitive cw operation reduces useful lifetime of the stacks to hundreds hours, in comparison with more than 10,000 hours lifetime typically demonstrated in commonly adopted non-stop cw reliability testing programs. It is shown, that proper selection of package materials and solders, careful design of fatigue sensitive parts and burn-in screening in the hard pulse operation mode allow considerable increase of lifetime and reliability, without compromising the device efficiency, optical power density and compactness.

  5. Combining high power diode lasers using fiber bundles for beam delivery in optoacoustic endoscopy applications

    NASA Astrophysics Data System (ADS)

    Gawali, Sandeep Babu; Leggio, Luca; Sánchez, Miguel; Rodríguez, Sergio; Dadrasnia, Ehsan; Gallego, Daniel C.; Lamela, Horacio

    2016-05-01

    Optoacoustic (OA) effect refers to the generation of the acoustic waves due to absorption of light energy in a biological tissue. The incident laser pulse is absorbed by the tissue, resulting in the generation of ultrasound that is typically detected by a piezoelectric detector. Compared to other techniques, the advantage of OA imaging (OAI) technique consists in combining the high resolution of ultrasound technique with the high contrast of optical imaging. Generally, Nd:YAG and OPO systems are used for the generation of OA waves but their use in clinical environment is limited for many aspects. On the other hand, high-power diode lasers (HPDLs) emerge as potential alternative. However, the power of HPDLs is still relatively low compared to solid-state lasers. We show a side-by-side combination of several HPDLs in an optical fiber bundle to increase the amount of power for OA applications. Initially, we combine the output optical power of several HPDLs at 905 nm using two 7 to 1 round optical fiber bundles featuring a 675 μm and 1.2 mm bundle aperture. In a second step, we couple the output light of these fiber bundles to a 600 μm core diameter endoscopic fiber, reporting the corresponding coupling efficiencies. The fiber bundles with reasonable small diameter are likely to be used for providing sufficient light energy to potential OA endoscopy (OAE) applications.

  6. High-power laser diodes at SCD: performance and reliability for defence and space applications

    NASA Astrophysics Data System (ADS)

    Risemberg, Shlomo; Karni, Yoram; Klumel, Genadi; Levy, Moshe; Berk, Yuri; Rech, Markus; Becht, Hubert; Frei, Bruno

    2009-05-01

    High Power Laser Diode Arrays developed and produced at SCD-SemiConductor Devices support a number of advanced defence and space programs. High efficiency and unsurpassed reliability at high operating temperatures are mandatory features for those applications. We report lifetime results of high power bar stacks, operating in QCW mode that rely on a field-proven design comprising Al-free wafer material technology and hard soldering robust packaging. A variety of packaging platforms have been implemented and tested at very harsh environmental conditions. Results include a long operational lifetime study totaling 20 billion pulses monitored in the course of several years for 808 nm QCW bar stacks.. Additionally, we report results of demanding lifetime tests for space qualification performed on these stacks at different levels of current load in a unique combination with operational temperature cycles in the range of -10 ÷60 °C. Novel solutions for highly reliable water cooled devices designed for operation in long pulses at different levels of PRF, are also discussed. The cooling efficiency of microchannel coolers is preserved while reliability is improved.

  7. Catastrophic optical degradation of the output facet of high-power single-transverse-mode diode lasers. 1. Physical model

    SciTech Connect

    Miftakhutdinov, D R; Bogatov, Alexandr P; Drakin, A E

    2010-09-10

    The physical model of catastrophic optical degradation (COD) of the output facet of high-power single- transverse-mode diode lasers is developed. The model excels other models both in completeness of the physical analysis of the processes leading to COD and in allowance for design feature of lasers used to increase the COD threshold - protective coating of the output facet and current limitations near it. (lasers)

  8. High-power diode lasers at 1178  nm with high beam quality and narrow spectra.

    PubMed

    Paschke, K; Bugge, F; Blume, G; Feise, D; Erbert, G

    2015-01-01

    High-power distributed Bragg reflector tapered diode lasers (DBR-TPLs) at 1180 nm were developed based on highly strained InGaAs quantum wells. The lasers emit a nearly diffraction-limited beam with more than two watts with a narrow spectral width. These features are believed to make this type of diode laser a key component for the manufacturing of miniaturized laser modules in the yellow and orange spectral range by second-harmonic generation to cover a spectral region currently not accessible with direct emitting diode lasers. Future applications might be the laser-cooling of sodium, high-resolution glucose-content measurements, as well as spectroscopy on rare earth elements. PMID:25531619

  9. High power 2 {mu}m diode-pumped Tm:YAG laser

    SciTech Connect

    Beach, R.J.; Sutton, S.B.; Honea, E.C.; Skidmore, J.A.; Emanuel, M.A.

    1996-01-01

    Using a scaleable diode end-pumping technology developed at LLNL, we have demonstrated a compact Tm:YAG laser capable of generating more than 50 W of cw 2 {mu}m laser output power. The design and operational characteristics of this laser, which was built originally for use in assessing laser surgical techniques, are discussed.

  10. Parametric Study and Multi-Criteria Optimization in Laser Cladding by a High Power Direct Diode Laser

    NASA Astrophysics Data System (ADS)

    Farahmand, Parisa; Kovacevic, Radovan

    2014-12-01

    In laser cladding, the performance of the deposited layers subjected to severe working conditions (e.g., wear and high temperature conditions) depends on the mechanical properties, the metallurgical bond to the substrate, and the percentage of dilution. The clad geometry and mechanical characteristics of the deposited layer are influenced greatly by the type of laser used as a heat source and process parameters used. Nowadays, the quality of fabricated coating by laser cladding and the efficiency of this process has improved thanks to the development of high-power diode lasers, with power up to 10 kW. In this study, the laser cladding by a high power direct diode laser (HPDDL) as a new heat source in laser cladding was investigated in detail. The high alloy tool steel material (AISI H13) as feedstock was deposited on mild steel (ASTM A36) by a HPDDL up to 8kW laser and with new design lateral feeding nozzle. The influences of the main process parameters (laser power, powder flow rate, and scanning speed) on the clad-bead geometry (specifically layer height and depth of the heat affected zone), and clad microhardness were studied. Multiple regression analysis was used to develop the analytical models for desired output properties according to input process parameters. The Analysis of Variance was applied to check the accuracy of the developed models. The response surface methodology (RSM) and desirability function were used for multi-criteria optimization of the cladding process. In order to investigate the effect of process parameters on the molten pool evolution, in-situ monitoring was utilized. Finally, the validation results for optimized process conditions show the predicted results were in a good agreement with measured values. The multi-criteria optimization makes it possible to acquire an efficient process for a combination of clad geometrical and mechanical characteristics control.

  11. High-Power Diode Laser-Treated 13Cr4Ni Stainless Steel for Hydro Turbines

    NASA Astrophysics Data System (ADS)

    Mann, B. S.

    2014-06-01

    The cast martensitic chromium nickel stainless steels such as 13Cr4Ni, 16Cr5Ni, and 17Cr4Ni PH have found wide application in hydro turbines. These steels have adequate corrosion resistance with good mechanical properties because of chromium content of more than 12%. The 13Cr4Ni stainless steel is most widely used among these steels; however, lacks silt, cavitation, and water impingement erosion resistances (SER, CER, and WIER). This article deals with characterizing 13Cr4Ni stainless steel for silt, cavitation, and water impingement erosion; and studying its improved SER, CER, and WIER behavior after high-power diode laser (HPDL) surface treatment. The WIER and CER have improved significantly after laser treatment, whereas there is a marginal improvement in SER. The main reason for improved WIER and CER is due to its increased surface hardness and formation of fine-grained microstructure after HPDL surface treatment. CER and WIER of HPDL-treated 13Cr4Ni stainless steel samples have been evaluated as per ASTM G32-2003 and ASTM G73-1978, respectively; and these were correlated with microstructure and mechanical properties such as ultimate tensile strength, modified ultimate resilience, and microhardness. The erosion damage mechanism, compared on the basis of scanning electron micrographs and mechanical properties, is discussed and reported in this article.

  12. Present status and future aspects of high-power diode laser materials processing under the view of a German national research project

    NASA Astrophysics Data System (ADS)

    Bachmann, Friedrich G.

    2000-06-01

    High power diode lasers from a few Watts up to several Kilowatts have entered industrial manufacturing environment for materials processing applications. The technology has proven to show unique features, e.g. high efficiency, small size, low energy consumption and high reliability. In the first part of this paper a short description of state-of- the-art high power diode laser technology and applications is provided and the benefits and restrictions of this laser technology will be evaluated. For large scale penetration into the manufacture market, the restrictions, especially the rather poor beam quality of high power diode lasers compared to conventional lasers have to be overcome. Also, the specialities of the high power diode lasers, i.e. their modular structure and their extremely small size have to be translated into laser manufacturing technology. The further improvement of high power diode lasers as well as the development of new diode laser specific manufacturing technologies are the essential topics of a National German Minister Priority Project entitled 'Modular Diode Laser Beam Tools': 22 Partners from industry and institutions, 4 semiconductor experts, 5 laser manufacturers and 14 applicants are working together in frame of this project to work out and transfer a joint strategy and system technology to the benefits of the future of high power diode laser technology. The goals, the structure and the work of this project will be described in the second part of this paper.

  13. High-Power Diode Laser Surface Treated HVOF Coating to Combat High Energy Particle Impact Wear

    NASA Astrophysics Data System (ADS)

    Mann, B. S.; Arya, Vivek; Pant, B. K.

    2013-07-01

    High-velocity oxy-fuel (HVOF)-sprayed coatings have performed exceptionally well in low-energy particle impact wear and are accepted worldwide. However, their application for high-energy particle impact wear (HEPIW) requires a different approach and more efforts. HVOF-coating systems typically use WC-Co, WC-Co-Cr, WC-Ni-Cr, and FeCrAlY-Cr3C2 powders. WC-Co-Cr powders are preferred when there is a high demand for corrosion resistance. WC-10Co-4Cr coating powder has been selected in the current study. To improve coating properties such as microhardness, fracture toughness, and HEPIW resistance, a new approach of surface treatment with robotically controlled high-power diode laser (HPDL) is attempted. The robotically controlled HVOF-coating deposition and laser surface treatment were monitored using real-time diagnostic control. The HPDL-treated coating has been compared with "as-sprayed" HVOF coating for HEPIW resistance, fracture toughness, microhardness and microstructure. The coating characteristics and properties after laser surface treatment have improved many times compared with "as-sprayed" HVOF coating. This is due to the elimination of pores in the coating and formation of a metallurgical bond between coating and substrate. This new development opens up a possibility of using such laser treatments in specialized areas where HEPIW damages are acute. The fracture toughness and HEPIW resistance along with optical micrographs of HPDL-treated and untreated HVOF coatings are discussed and reported in this article. HEPIW resistance is observed to be proportional to the product of fracture toughness and microhardness of the HVOF coating.

  14. Feasibility of High-Power Diode Laser Array Surrogate to Support Development of Predictive Laser Lethality Model

    SciTech Connect

    Lowdermilk, W H; Rubenchik, A M; Springer, H K

    2011-01-13

    Predictive modeling and simulation of high power laser-target interactions is sufficiently undeveloped that full-scale, field testing is required to assess lethality of military directed-energy (DE) systems. The cost and complexity of such testing programs severely limit the ability to vary and optimize parameters of the interaction. Thus development of advanced simulation tools, validated by experiments under well-controlled and diagnosed laboratory conditions that are able to provide detailed physics insight into the laser-target interaction and reduce requirements for full-scale testing will accelerate development of DE weapon systems. The ultimate goal is a comprehensive end-to-end simulation capability, from targeting and firing the laser system through laser-target interaction and dispersal of target debris; a 'Stockpile Science' - like capability for DE weapon systems. To support development of advanced modeling and simulation tools requires laboratory experiments to generate laser-target interaction data. Until now, to make relevant measurements required construction and operation of very high power and complex lasers, which are themselves costly and often unique devices, operating in dedicated facilities that don't permit experiments on targets containing energetic materials. High power diode laser arrays, pioneered by LLNL, provide a way to circumvent this limitation, as such arrays capable of delivering irradiances characteristic of De weapon requires are self-contained, compact, light weight and thus easily transportable to facilities, such as the High Explosives Applications Facility (HEAF) at Lawrence Livermore National Laboratory (LLNL) where testing with energetic materials can be performed. The purpose of this study was to establish the feasibility of using such arrays to support future development of advanced laser lethality and vulnerability simulation codes through providing data for materials characterization and laser-material interaction

  15. Effect of thermal processes on critical operation conditions of high-power laser diodes

    SciTech Connect

    Parashchuk, V V; Vu Doan Mien

    2013-10-31

    Using numerical and analytical techniques in a threedimensional approximation, we have modelled the effect of spatial thermoelastic stress nonuniformity in a laser diode – heat sink system on the output characteristics of the device in different operation modes. We have studied the influence of the pulse duration, the geometry of the laser system and its thermophysical parameters on the critical pump current density, in particular for state-of-the-art heat conductive substrate materials. The proposed approach has been used to optimise the laser diode assembly process in terms of the quality of laser crystal positioning (bonding) on a heat sink. (lasers)

  16. High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

    NASA Technical Reports Server (NTRS)

    Connolly, J. C.; Carlin, D. B.; Ettenberg, M.

    1989-01-01

    A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.

  17. High-power high-T0 native oxide stripe-geometry 980-nm laser diodes

    NASA Astrophysics Data System (ADS)

    Burkhard, Herbert; Piataev, Valeri; Schlapp, Winfried

    1996-04-01

    We present results of an experimental investigation of the temperature sensitivity of separate confinement strained InGaAs/GaAs/AlxGa1-xAs quantum well single-mode and multimode high power laser diodes (HPLDs). The HPLDs have been fabricated by use of MBE material and a 'wet' thermal oxidation process. Due to the high carrier confinement in the structure with two quantum wells (DQW) and Al-content x greater than 0.7 in the cladding layers an extremely high characteristic temperature T0 equals 350 K for broad area and T0 of 400 K around room temperature for single mode HPLDs with extremely low threshold current density were obtained. In spite of the high Al-content in the cladding layers (0.5 less than x less than 0.8) a very high catastrophic optical damage (COD) level (greater than 10 MW/cm2) and lifetimes of more than 10 kh at 100 mW (T equals 50 degrees Celsius) have been observed.

  18. Effect of thermal processes on critical operation conditions of high-power laser diodes

    NASA Astrophysics Data System (ADS)

    Parashchuk, V. V.; Doan Mien, Vu

    2013-10-01

    Using numerical and analytical techniques in a threedimensional approximation, we have modelled the effect of spatial thermoelastic stress nonuniformity in a laser diode - heat sink system on the output characteristics of the device in different operation modes. We have studied the influence of the pulse duration, the geometry of the laser system and its thermophysical parameters on the critical pump current density, in particular for state-of-the-art heat conductive substrate materials. The proposed approach has been used to optimise the laser diode assembly process in terms of the quality of laser crystal positioning (bonding) on a heat sink.

  19. High power laser diodes at 14xx nm wavelength range for industrial and medical applications

    NASA Astrophysics Data System (ADS)

    Telkkälä, Jarkko; Boucart, Julien; Krejci, Martin; Crum, Trevor; Lichtenstein, Norbert

    2014-03-01

    We report on the development of the latest generation of high power laser diodes at 14xx nm wavelength range suitable for industrial applications such as plastics welding and medical applications including acne treatment, skin rejuvenation and surgery. The paper presents the newest chip generation developed at II-VI Laser Enterprise, increasing the output power and the power conversion efficiency while retaining the reliability of the initial design. At an emission wavelength around 1440 nm we applied the improved design to a variety of assemblies exhibiting maximum power values as high as 7 W for broad-area single emitters. For 1 cm wide bars on conductive coolers and for bars on active micro channel coolers we have obtained 50 W and 72 W in continuous wave (cw) operation respectively. The maximum power measured for a 1 cm bar operated with 50 μs pulse width and 0.01% duty cycle was 184 W, demonstrating the potential of the chip design for optimized cooling. Power conversion efficiency values as high as 50% for a single emitter device and over 40% for mounted bars have been demonstrated, reducing the required power budget to operate the devices. Both active and conductive bar assembly configurations show polarization purity greater than 98%. Life testing has been conducted at 95 A, 50% duty cycle and 0.5 Hz hard pulsed operation for bars which were soldered to conductive copper CS mounts using our hard solder technology. The results after 5500 h, or 10 million "on-off" cycles show stable operation.

  20. Coupling of DBR tapered diode laser radiation into a single-mode-fiber at high powers

    NASA Astrophysics Data System (ADS)

    Jedrzejczyk, D.; Asbahr, P.; Pulka, M.; Eppich, B.; Paschke, K.

    2014-03-01

    In this work, we investigate experimentally coupling of diode laser radiation into a single-mode-fiber (SMF) at high optical power. In particular, nearly diffraction-limited, single-frequency continuous wave (CW) radiation around 1064 nm generated by a distributed Bragg reflector (DBR) tapered diode laser is coupled in a bench-top experiment into an SMF with a core diameter of approx. 6 μm. Misalignment tolerances for efficient SMF coupling are determined through two-dimensional coupling efficiency scans, conducted for an attenuated diode laser beam. The coupling efficiency and the laser beam properties behind the SMF are investigated in dependence on the optical power in front of the SMF. A maximum power ex fiber of 3.5 W at a coupling efficiency of 65 % is reached.

  1. Optical design and development of a fiber coupled high-power diode laser system for laser transmission welding of plastics

    NASA Astrophysics Data System (ADS)

    Rodríguez-Vidal, Eva; Quintana, Iban; Etxarri, Jon; Azkorbebeitia, Urko; Otaduy, Deitze; González, Francisco; Moreno, Fernando

    2012-12-01

    Laser transmission welding (LTW) of thermoplastics is a direct bonding technique already used in different industrial applications sectors such as automobiles, microfluidics, electronics, and biomedicine. LTW evolves localized heating at the interface of two pieces of plastic to be joined. One of the plastic pieces needs to be optically transparent to the laser radiation whereas the other part has to be absorbent, being that the radiation produced by high power diode lasers is a good alternative for this process. As consequence, a tailored laser system has been designed and developed to obtain high quality weld seams with weld widths between 0.7 and 1.4 mm. The developed laser system consists of two diode laser bars (50 W per bar) coupled into an optical fiber using a nonimaging solution: equalization of the beam parameter product (BPP) in the slow and fast axes by a pair of step-mirrors. The power scaling was carried out by means of a multiplexing polarization technique. The analysis of energy balance and beam quality was performed considering ray tracing simulation (ZEMAX) and experimental validation. The welding experiments were conducted on acrylonitrile/butadiene/styrene (ABS), a thermoplastic frequently used in automotive, electronics and aircraft applications, doped with two different concentrations of carbon nanotubes (0.01% and 0.05% CNTs). Quality of the weld seams on ABS was analyzed in terms of the process parameters (welding speed, laser power and clamping pressure) by visual and optical microscope inspections. Mechanical properties of weld seams were analyzed by mechanical shear tests. High quality weld seams were produced in ABS, revealing the potential of the laser developed in this work for a wide range of plastic welding applications.

  2. Reliable high-power long-pulse 8XX-nm diode laser bars and arrays operating at high temperature

    NASA Astrophysics Data System (ADS)

    Fan, Li; Cao, Chuanshun; Thaler, Gerald; Nonnemacher, Dustin; Lapinski, Feliks; Ai, Irene; Caliva, Brian; Das, Suhit; Walker, Robert; Zeng, Linfei; McElhinney, Mark; Thiagarajan, Prabhu

    2011-03-01

    We report on the high-power high-temperature long-pulse performance of the 8XX-nm diode laser bars and arrays, which were recently developed at Lasertel Inc. for diode laser pumping within high-temperature (130 °C) environment without any cooling. Since certain energy in each pulse is required, the diode laser bars have to provide both high peak power and a nice pulse shape at 130 °C. Optimizing the epi-structure of the diode laser, the laser cavity and the distribution of waste heat, we demonstrate over 40-millisecond long-pulse operation of the 8XX-nm CS bars at 130 °C and 100 A. Pumping the bar with 5-Hz frequency 15-millisecond rectangular current pulses, we generate over 60 W peak power at 100 A and 130 °C. During the pulse duration, the pulse shape of the CS bars is well-maintained and the power almost linearly decays with a rate of 1.9% peak power per millisecond at 130 °C and 100 A. Regardless of the pulse shape, this laser bar can lase at very high temperature and output pulse can last for 8 ms/2ms at 170 °C/180 °C (both driven by 60 A current pulses with 5-Hz frequency, 10 millisecond pulse width), respectively. To the best of our knowledge, this is the highest operating temperature for a long-pulse 8XX-nm laser bar. Under the condition of 130 °C and 100 A, the laser bars do not show any degradation after 310,000 10-millisecond current pulse shots. The performance of stack arrays at 130 °C and 100 A are also presented. The development of reliable high-temperature diode laser bar paves the way for diode laser long-pulse pumping within a high-temperature environment without any cooling.

  3. High-power diode-pumped AlGaAs surface-emitting laser.

    PubMed

    Holm, M A; Burns, D; Cusumano, P; Ferguson, A I; Dawson, M D

    1999-09-20

    We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at approximately 870 nm. By using a semiconductor Bragg reflector stack/multiple GaAs quantum well structure, mounted within a conventional laser cavity, we achieved single transverse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral range has been obtained. PMID:18324092

  4. Unveiling laser diode "fossil" and the dynamic analysis for heliotropic growth of catastrophic optical damage in high power laser diodes.

    PubMed

    Zhang, Qiang; Xiong, Yihan; An, Haiyan; Boucke, Konstantin; Treusch, Georg

    2016-01-01

    Taking advantage of robust facet passivation, we unveil a laser "fossil" buried within a broad area laser diode (LD) cavity when the LD was damaged by applying a high current. For the first time, novel physical phenomena have been observed at these dramatically elevated energy densities within the nanoscale LD waveguide. The observation of the laser "fossil" is interpreted with different mechanisms, including: the origination of bulk catastrophic optical damage (COD) due to locally high energy densities, heliotropic COD growth, solid-liquid-gas phase transformations, strong longitudinal phonon cooling effect on the molten COD wave front, and the formation of patterns due to laser lateral modes. For the first time the COD propagation is analyzed temporally by an acoustic phonon bouncing model and the COD velocity is extrapolated to be exponentially decreasing from more than 800 μm/μs to a few μm/μs within a 20 μs time period as the energy density dissipates. PMID:26740303

  5. Corrosion resistant nickel superalloy coatings laser-clad with a 6 kW high power diode laser (HPDL)

    NASA Astrophysics Data System (ADS)

    Tuominen, Jari; Honkanen, Mari; Hovikorpi, Jari; Vihinen, Jorma; Vuoristo, Petri; Maentylae, Tapio

    2003-03-01

    A series of exerpiments were performed to investigate the one-step laser cladding of Inconel 625 powder, injected off-axially onto Fe37 and 42CrMo4 substrates. The experiments were carried out using a 6 kW high power diode laser (HPDL) mounted to a 6 axis robot system. The rectangular shape of the delivering beam was focused to a spot size of 22 x 5 mm on the work piece. The coating samples were produced using different levels of powder feed rate (77 - 113 g/min), traveling speed (300 - 400 mm/min) and laser power (4.8 - 6 kW). Hot corrosion resistance of laser-clad Inconel 625 coatings were tested in Na2SO4 - V2O5 at 650°C for 1000 hours. Wet corrosion properties of the obtained coatings were tested in immersion tests in 3.5 wt.% NaCl solution. Diode laser power of 6 kW (808 and 940 nm) was high enough to produce 20 mm wide laser-clad tracks with a thickness of 2.5 mm in a single pass, when powder feed rate was more than 6 kg/h and traverse speed was 400 mm/min. Wet corrosion properties of laser-clad Inconel 625 coatings were found to be superior to sprayed and welded coatings. Hot corrosion resistance was even slightly better than corresponding wrought alloy. Finally, one-step HPDL cladding was demonstrated in coating of shaft for hydraulic cylinder with Inconel 625 powder. Due to high coating quality, high deposition rate and traverse speed HPDL devices are very promising for large area cladding applications.

  6. High-power multi-beam diode laser transmitter for a flash imaging lidar

    NASA Astrophysics Data System (ADS)

    Holmlund, Christer; Aitta, Petteri; Kivi, Sini; Mitikka, Risto; Tyni, Lauri; Heikkinen, Veli

    2013-10-01

    VTT Technical Research Centre of Finland is developing the transmitter for the "Flash Optical Sensor for TErrain Relative NAVigation" (FOSTERNAV) multi-beam flash imaging lidar. FOSTERNAV is a concept demonstrator for new guidance, navigation and control (GNC) technologies to fulfil the requirements for landing and docking of spacecraft as well as for navigation of rovers. This paper presents the design, realisation and testing of the multi-beam continuous-wave (CW) laser transmitter to be used in a 256x256 pixel flash imaging lidar. Depending on the target distance, the lidar has three operation modes using either several beams with low divergence or one single beam with a large divergence. This paper describes the transmitter part of the flash imaging lidar with focus on the electronics and especially the laser diode drivers. The transmitter contains eight fibre coupled commercial diode laser modules with a total peak optical power of 32 W at 808 nm. The main requirement for the laser diode drivers was linear modulation up to a frequency of 20 MHz allowing, for example, low distortion chirps or pseudorandom binary sequences. The laser modules contain the laser diode, a monitoring photodiode, a thermo-electric cooler, and a thermistor. The modules, designed for non-modulated and low-frequency operation, set challenging demands on the design of the drivers. Measurement results are presented on frequency response, and eye diagrams for pseudo-random binary sequences.

  7. Ex vivo efficacy evaluation of laser vaporization for treatment of benign prostatic hyperplasia using a 300-W high-power laser diode with a wavelength of 980 nm

    PubMed Central

    Takada, Junya; Honda, Norihiro; Hazama, Hisanao

    2014-01-01

    Background and Objective: Laser vaporization of the prostate is considered to be a promising treatment for benign prostatic hyperplasia (BPH), and efficiency of vaporization and hemostasis are both important parameters for such treatment. In this study, we used a high-power laser diode with a wavelength of 980 nm to obtain high vaporization efficiency with good hemostasis. The objective of this study is to evaluate the efficacy of laser vaporization for treatment of BPH in ex vivo experiments using a 300-W high-power laser diode with a wavelength of 980 nm quantitatively. Materials and Methods: An ex vivo experimental setup simulating clinical treatment situation was constructed. Bovine prostate tissue was used as a sample. The power setting was 100, 150, 200, 250, or 300 W, and the irradiation time was 0.5, 1, or 2 s. After laser irradiation, vaporized and coagulated depths were measured. Results: The vaporized depth increased with the laser power and irradiation time, and the results confirmed that the high-power laser diode could efficiently vaporize the prostate tissue. Coagulated depth increased as the laser power became higher. Conclusions: Laser vaporization of prostate tissue using a high-power laser diode with a wavelength of 980 nm represents a promising treatment for BPH; this method exhibits high vaporization efficiency and good hemostasis. However, operators must be aware of the risk of postoperative perforation of the prostatic capsule caused by coagulation of deep regions that cannot be visualized by endoscopic observation. PMID:25368442

  8. Compact deep UV laser system at 222.5 nm by single-pass frequency doubling of high-power GaN diode laser emission

    NASA Astrophysics Data System (ADS)

    Ruhnke, Norman; Müller, André; Eppich, Bernd; Güther, Reiner; Maiwald, Martin; Sumpf, Bernd; Erbert, Götz; Tränkle, Günther

    2016-03-01

    Deep ultraviolet (DUV) lasers emitting below 300 nm are of great interest for many applications, for instance in medical diagnostics or for detecting biological agents. Established DUV lasers, e.g. gas lasers or frequency quadrupled solid-state lasers, are relatively bulky and have high power consumptions. A compact and reliable laser diode based system emitting in the DUV could help to address applications in environments where a portable and robust light source with low power consumption is needed. In this work, a compact DUV laser system based on single-pass frequency doubling of highpower GaN diode laser emission is presented. A commercially available high-power GaN laser diode from OSRAM Opto Semiconductors serves as a pump source. The laser diode is spectrally stabilized in an external cavity diode laser (ECDL) setup in Littrow configuration. The ECDL system reaches a maximum optical output power of 700 mW, maintaining narrowband emission below 60 pm (FWHM) at 445 nm over the entire operating range. By direct single pass frequency doubling in a BBO crystal with a length of 7.5 mm a maximum DUV output power of 16 μW at a wavelength of 222.5 nm is generated. The presented concept enables compact and efficient diode laser based light sources emitting in the DUV spectral range that are potentially suitable for in situ applications where a small footprint and low power consumption is essential.

  9. Improving the efficiency of high-power diode lasers using diamond heat sinks

    SciTech Connect

    Parashchuk, Valentin V; Baranov, V V; Telesh, E V; Mien, Vu Doan; Luc, Vu Van; Truong, Pham Van; Belyaeva, A K

    2010-06-23

    Using multifunctional ion beam and magnetron sputtering systems, we have developed chemical and vacuum techniques for producing metallic coatings firmly adherent to various surfaces, with application to copper and diamond heat sinks for diode lasers. Conditions have been optimised for mounting diode lasers and bars using the proposed metallisation processes, and significant improvements in the output parameters of the devices have been achieved. The power output of cw laser diodes on diamond heat sinks increases by up to a factor of 2, the linear (working) portion of their power-current characteristic becomes markedly broader, and their slope efficiency increases by a factor of 1.5 - 2 relative to that of lasers on copper heat spreaders. The use of diamond heat sinks extends the drive current range of pulsed diode bars by a factor of 2 - 3 and enables them to operate at more than one order of magnitude longer pump pulse durations (up to milliseconds) when the pulse repetition rate is at least 10 Hz. (lasers)

  10. Orofacial hereditary haemorrhagic telangiectasia: high power diode laser in early and advanced lesion treatment

    NASA Astrophysics Data System (ADS)

    Tempesta, Angela; Franco, Simonetta; Miccoli, Simona; Suppressa, Patrizia; De Falco, Vincenzo; Crincoli, Vito; Lacaita, Mariagrazia; Giuliani, Michele; Favia, Gianfranco

    2014-01-01

    Hereditary Haemorrhagic Telangiectasia (HHT) is a muco-cutaneous inherited disease. Symptoms are epistaxis, visceral arterio-venous malformations, multiple muco-cutaneous telangiectasia with the risk of number increasing enlargement, bleeding, and super-infection. The aim of this work is to show the dual Diode Laser efficacy in preventive treatment of Early Lesions (EL < 2mm) and therapeutic treatment of Advanced Lesions (AL < 2mm). 21 patients affected by HHT with 822 muco-cutaneous telangiectatic nodules have been treated in several sessions with local anaesthesia and cooling of treated sites. EL preventive treatment consists of single Laser impulse (fibre 320) in ultrapulsed mode (2 mm single point spot). AL therapeutic treatment consists of repeated Laser impulses in pulsed mode (on 200ms / off 400ms). According to the results, Diode Laser used in pulsed and ultra-pulsed mode is very effective as noninvasive treatment both in early and advanced oral and perioral telangiectasia.

  11. High-power diode-pumped passively mode-locked Yb:YAG lasers.

    PubMed

    Aus der Au, J; Schaer, S F; Paschotta, R; Hönninger, C; Keller, U; Moser, M

    1999-09-15

    We obtained 74-kW peak power and 3.5-W average output power in 1-ps pulses from a diode-pumped Yb:YAG laser at 1030 nm that was passively mode locked with a semiconductor saturable-absorber mirror. Another laser produced 57-kW peak power and as much as 8.1-W average output power in 2.2-ps pulses, split into two nearly diffraction-limited beams (M(2)<1.2) . To our knowledge, these are by far the highest reported peak and average output powers from a diode-pumped mode-locked laser in this pulse-duration regime. PMID:18079780

  12. Advancements in high-power high-brightness laser bars and single emitters for pumping and direct diode application

    NASA Astrophysics Data System (ADS)

    An, Haiyan; Jiang, Ching-Long J.; Xiong, Yihan; Zhang, Qiang; Inyang, Aloysius; Felder, Jason; Lewin, Alexander; Roff, Robert; Heinemann, Stefan; Schmidt, Berthold; Treusch, Georg

    2015-03-01

    We have continuously optimized high fill factor bar and packaging design to increase power and efficiency for thin disc laser system pump application. On the other hand, low fill factor bars packaged on the same direct copper bonded (DCB) cooling platform are used to build multi-kilowatt direct diode laser systems. We have also optimized the single emitter designs for fiber laser pump applications. In this paper, we will give an overview of our recent advances in high power high brightness laser bars and single emitters for pumping and direct diode application. We will present 300W bar development results for our next generation thin disk laser pump source. We will also show recent improvements on slow axis beam quality of low fill factor bar and its application on performance improvement of 4-5 kW TruDiode laser system with BPP of 30 mm*mrad from a 600 μm fiber. Performance and reliability results of single emitter for multiemitter fiber laser pump source will be presented as well.

  13. Correction of beam errors in high power laser diode bars and stacks

    NASA Astrophysics Data System (ADS)

    Monjardin, J. F.; Nowak, K. M.; Baker, H. J.; Hall, D. R.

    2006-09-01

    The beam errors of an 11 bar laser diode stack fitted with fast-axis collimator lenses have been corrected by a single refractive plate, produced by laser cutting and polishing. The so-called smile effect is virtually eliminated and collimator aberration greatly reduced, improving the fast-axis beam quality of each bar by a factor of up to 5. The single corrector plate for the whole stack ensures that the radiation from all the laser emitters is parallel to a common axis. Beam-pointing errors of the bars have been reduced to below 0.7 mrad.

  14. Fabrication processes for GaAs-based high-power diode lasers

    NASA Astrophysics Data System (ADS)

    Meehan, Kathleen; Heath, Linda S.; Williams, Jeannie E.; Wang, Tien Yang; Beyea, Dana M.; Chin, Aland K.; Stutius, Wolfgang

    1993-06-01

    GaAs-based, edge-emitting diode lasers have become important light sources for numerous applications, e.g., in ophthalmology and dentistry, pumping of solid-state lasers, and printing on thermal media. The general performance requirements for these devices are high brightness, high reliability, stable optical-characteristics, and low system-cost to performance ratio. Device processing procedures such as dry etching, anodic oxidation, anti-reflection coatings, ion-implantation, and epitaxial growth on non-planar substrates impact the operation of the laser, both positively as well as negatively. The effect of these fabrication procedures on device reliability is discussed where applicable.

  15. High-power mode-locked hybrid pulse source using two-section laser diodes.

    PubMed

    Morton, P A; Mizrahi, V; Tanbun-Ek, T; Logan, R A; Lemaire, P; Erdogan, T; Sciortino, P F; Sergent, A M; Wecht, K W

    1994-05-15

    We describe a mode-locked hybrid pulse source with a two-section laser diode to obtain short mode-locked pulses (23 ps) with an average power of 7.8 mW, a high peak power of 137 mW, and a repetition rate of 2.51 GHz. The hybrid laser incorporates a two-section laser and an optical fiber cavity with an integrated Bragg reflector. The Bragg reflector controls the operating wavelength to subnanometer precision and also confines the bandwidth of the pulses so as to keep the time-bandwidth product below 1. PMID:19844425

  16. Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm.

    PubMed

    Chi, Mingjun; Erbert, G; Sumpf, B; Petersen, Paul Michael

    2010-05-15

    A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659to675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than 0.07 nm throughout the tuning range, and the beam quality factor M(2) is 2.0 with the output power of 1.27 W. PMID:20479803

  17. Finite element analysis of expansion-matched submounts for high-power laser diodes packaging

    NASA Astrophysics Data System (ADS)

    Yuxi, Ni; Xiaoyu, Ma; Hongqi, Jing; Suping, Liu

    2016-06-01

    In order to improve the output power and increase the lifetime of laser diodes, expansion-matched submounts were investigated by finite element analysis. The submount was designed as sandwiched structure. By varying the vertical structure and material of the middle layer, the thermal expansion behavior on the mounting surface was simulated to obtain the expansion-matched design. In addition, the thermal performance of laser diodes packaged by different submounts was compared. The numerical results showed that, changing the thickness ratio of surface copper to middle layer will lead the stress and junction temperature to the opposite direction. Thus compromise needs to be made in the design of the vertical structure. In addition, the silicon carbide (SiC) is the most promising material candidate for the middle layer among the materials discussed in this paper. The simulated results were aimed at providing guidance for the optimal design of sandwich-structure submounts.

  18. High power AlGaAs-GaAs visible diode lasers

    SciTech Connect

    Tihanyi, P.L.; Jain, F.C. . Dept. of Electrical Engineering); Robinson, M.J.; Dixon, J.E. ); Williams, J.E.; Meehan, K.; O'Neill, M.S.; Heath, L.S.; Beyea, D.M. . Microelectronics and Materials Center)

    1994-07-01

    A high-power room-temperature AlGaAs graded index separately confined heterostructure (GRINSCH) laser emitting in the visible spectral regime ([approx equal]715 nm) is reported for the first time. The device is gain-guided and consists of 12 stripes, each 5 [mu]m in width with a centerline separation of 9 [mu]m. This high-power visible laser has been successfully fabricated using a GaAlAs active layer. The epitaxial layer was grown with significantly lower levels of oxygen compared to those grown using standard metalorganic sources. Threshold currents of 310 mA at 10 C were routinely measured on uncoated devices. The uncoated device had a catastrophic optical damage limit of 540 mW and has a slope efficiency as high as 0.48. No degradation in device performance was observed during a 50-hour 150-mW burn-in.

  19. High-power distributed Bragg reflector ridge-waveguide diode laser with very small spectral linewidth.

    PubMed

    Paschke, K; Spiessberger, S; Kaspari, C; Feise, D; Fiebig, C; Blume, G; Wenzel, H; Wicht, A; Erbert, G

    2010-02-01

    We manufactured and investigated distributed Bragg reflector ridge-waveguide diode lasers having sixth-order surface gratings and an emission wavelength around 974 nm. The single-mode output power of the lasers with a total length of 4 mm exceeded 1 W. A very small spectral linewidth of 1.4 MHz (3 dB) consisting of a Lorentzian part of 146 kHz and a Gaussian part of 1308 MHz was measured using a self-delayed heterodyne measurement technique. PMID:20125735

  20. New Class of CW High-Power Diode-Pumped Alkali Lasers (DPALs)

    SciTech Connect

    Krupke, W F; Beach, R J; Kanz, V K; Payne, S A; Early, J T

    2004-03-23

    The new class of diode-pumped alkali vapor lasers (DPALs) offers high efficiency cw laser radiation at near-infrared wavelengths: cesium 895 nm, rubidium 795 nm, and potassium 770 nm. The working physical principles of DPALs will be presented. Initial 795 nm Rb and 895 nm Cs laser experiments performed using a titanium sapphire laser as a surrogate pump source demonstrated DPAL slope power conversion efficiencies in the 50-70% range, in excellent agreement with device models utilizing only literature spectroscopic and kinetic data. Using these benchmarked models for Rb and Cs, optimized DPALs with optical-optical efficiencies >60%, and electrical efficiencies of 25-30% are projected. DPAL device architectures for near-diffraction-limited power scaling into the high kilowatt power regime from a single aperture will be described. DPAL wavelengths of operation offer ideal matches to silicon and gallium arsenide based photovoltaic power conversion cells for efficient power beaming.

  1. High-power diode lasers with an aluminium-free active region at 915 nm

    NASA Astrophysics Data System (ADS)

    Michel, N.; Hassiaoui, I.; Calligaro, M.; Lecomte, M.; Parillaud, O.; Krakowski, M.; Borruel, L.; García-Tijero, J.-M.; Esquivias, I.; Sukecki, S.; Larkins, E. C.

    2005-11-01

    We have developed high-power lasers, which are based on an Al-free active region at 915 nm. The laser structure has very low internal losses of 0.5 cm-1, a very low transparency current density of 86 A/cm2, and a high internal quantum efficiency of 86%. Based on these good results, we have realised narrow-aperture, index-guided tapered lasers which deliver 1 W CW with and M2 beam quality factor of 3.0 using both the 1/e2 and standard-deviation methods. We have also fabricated index-guided tapered lasers with a Clarinet shape, which deliver 0.65 W CW with an M2 beam quality factor of less than 1.5 at 1/e2, and less than 2.5 using the standard deviation method.

  2. High-power 660.5 nm red laser from diode-side-pumped intracavity frequency-doubled Nd:YLF laser

    NASA Astrophysics Data System (ADS)

    Wang, Zhichao; Wang, Baoshan; Chen, Ming; Yang, Feng; Zhang, Shenjin; Zhang, Xiaowen; Bo, Yong; Xu, Yiting; Zong, Nan; Xu, Jialin; Peng, Qinjun; Cui, Dafu; Xu, Zuyan

    2015-12-01

    We demonstrate a high-power red laser at 660.5 nm from intracavity frequency doubling of a diode-side-pumped 1321 nm Nd:LiYF4 (Nd:YLF) ring laser in a LiB3O5 (LBO) crystal. The maximum average output power of the red laser is obtained to be 23 W with beam quality factor M 2  =  1.3.

  3. High-power, mode-locking, external-cavity feedback diode-pumped laser based on SHG in PPKTP

    NASA Astrophysics Data System (ADS)

    Li, Wenchao; Liu, Zhengjun; Zhao, Hongdong; Li, Zhiquan

    2010-11-01

    The generation of high-power green laser is important for the numerous applications in industry, medicine, research and even entertainment. In addition, mode-locked lasers operating at {100 MHz repetition rate, are particularly attractive for nonlinear optics and spectroscopy. Characteristics of high-power, mode-locking green radiation obtained by Nd:YVO4 at 1064nm in the nonlinear crystals of PPKTP are studied. Two identical highly efficient diode-pumped laser heads placed in a plane-plane resonator are used for the input laser based on theoretically investigation of the thermally stable region of Nd:YVO4 rod. The PPKTP crystal of Brewster-cut is used in the external cavity configuration, the cavity losses is significantly smaller than for an antireflection(AR) coated crystal cut for normal incident, however, the effective nonlinearity is reduction. Frequency doubling nonlinear mirror(FDNLM) based on intensity dependent reflection in the laser cavity is used for the laser mode-locking. A stable green output power of 510W with pulse repetition rate of 100MHz and net conversion efficiency of η=50% at an input mode-matched power of 2KW are obtained. Meanwhile, thermal effects in the nonlinear crystal severely limit the efficiency of the laser configuration when using high pump power.

  4. All-optical Q-switching limiter for high-power gigahertz modelocked diode-pumped solid-state lasers.

    PubMed

    Klenner, Alexander; Keller, Ursula

    2015-04-01

    Passively modelocked diode-pumped solid-state lasers (DPSSLs) with pulse repetition rates in the gigahertz regime suffer from an increased tendency for Q-switching instabilities. Low saturation fluence intracavity saturable absorbers - such as the semiconductor saturable absorber mirrors (SESAMs) - can solve this problem up to a certain average output power limited by the onset of SESAM damage. Here we present a passive stabilization mechanism, an all-optical Q-switching limiter, to reduce the impact of Q-switching instabilities and increase the potential output power of SESAM modelocked lasers in the gigahertz regime. With a proper cavity design a Kerr lens induced negative saturable absorber clamps the maximum fluence on the SESAM and therefore limits the onset of Q-switching instabilities. No critical cavity alignment is required because this Q-switching limiter acts well within the cavity stability regime. Using a proper cavity design, a high-power diode-pumped Yb:CALGO solid-state laser generated sub-100 fs pulses with an average output power of 4.1 W at a pulse repetition rate of 5 GHz. With a pulse duration of 96 fs we can achieve a peak power as high as 7.5 kW directly from the SESAM modelocked laser oscillator without any further external pulse amplification and/or pulse compression. We present a quantitative analysis of this Kerr lens induced Q-switching limiter and its impact on modelocked operation. Our work provides a route to compact high-power multi-gigahertz frequency combs based on SESAM modelocked diode-pumped solid-state lasers without any additional external amplification or pulse compression. PMID:25968691

  5. Experimental studies for improvement of thermal effects in a high-power fiber-coupled diode laser module operating at 808 nm

    NASA Astrophysics Data System (ADS)

    El-Sherif, Ashraf F.; Hussein, Khalid; Hassan, Mahmoud F.; Talat, Mahmoud M.

    2012-03-01

    High power diode laser module operating at 808 nm is required for different applications, such as developing an efficient high power Nd3+-doped solid state laser and Tm3+ -doped silica fiber laser, industrial, medical and military applications. Optical and thermal images characterization for a fiber-coupled high power diode laser module is presented experimentally for 6.6 Watt output optical power .An external temperature controller system was designed, which stabilizes the central wavelength at 808 nm at 25°C over a wide range of diode laser driving current from 1A to 6 A. without this cooling system, the wavelength changes by 0.35nm/°C for temperature changes from 20°C to 40°C at the same range of the driving current. In this paper we have present a methodology for temperature reduction of a 808 nm high power diode laser module, based on dynamically thermal control, which is known as dynamic thermal management. Stabilization of the output wavelength has been done by using proportional speed control (PSC) of a CPU cooling fan with certain scheme of straight fins heat sink. Two electronic circuits based on pulse width modulation (PWM) in microcontroller and comparators IC have been used. This technique can be considered as an effective mechanism for reducing temperature and power dissipation to make stabilization of the diode laser output wavelength by preventing heat accumulation from the thermo electric cooling (TEC) inside the diode laser module confirmed by thermal images.

  6. Beam combining techniques for high-power high-brightness diode lasers

    NASA Astrophysics Data System (ADS)

    Kruschke, Bastian; Fritsche, Haro; Kern, Holger; Hagen, Thomas; Pahl, Ulrich; Koch, Ralf; Grohe, Andreas; Gries, Wolfgang

    2015-02-01

    Laser diodes are efficient and compact devices operating in a wide range of wavelengths. Boosting power by beam combining while maintaining good beam quality has been a long-standing challenge. We discuss various approaches for beam combining with emphasis on solutions pursued at DirectPhotonics. Our design employs single emitter diodes as they exhibit highest brightness and excellent reliability. In a first step, after fast axis collimation, all single emitter diodes on one subunit are stacked side-by-side by a monolithic slow-axis-collimator thus scaling the power without enhancing the brightness. The emissions of all diodes on a subunit are locked by a common Volume Bragg grating (VBG), resulting in a bandwidth < 0.5nm and high wavelength stability. Second, two subunits with identical wavelength are polarization coupled forming one wavelength channel with doubled power and brightness. Third, up to five channels are serially spectrally combined using dichroic filters. The stabilized wavelengths enable dense spectral combining, i.e. narrow channel spacing. This module features over 500W output power within 20nm bandwidth and a beam parameter product better than 3.5mm*mrad x 5mm*mrad (FA x SA) allowing for a 100μm, 0.15NA delivery fiber [1]. The small bandwidth of a 500-W-module enables subsequent coarse spectral combining by thin film filters, thus further enhancing the brightness. This potential can only be fully utilized by automated manufacturing ensuring reproducibility and high yield. A precision robotic system handles and aligns the individual fast axis lenses. Similar technologies are deployed for aligning the VBGs and dichroic filters.

  7. High power gain-switched diode laser master oscillator and amplifier

    SciTech Connect

    Poelker, M.

    1995-11-06

    A tapered-stripe, traveling-wave semiconductor optical amplifier was seeded with 3.3 mW of gain-switched diode laser light to obtain over 200 mW average power with pulse widths{approx}105 ps full width at half-maximum (FWHM) and a pulse repetition rate of 499 MHz corresponding to a peak power of 3.8 W. Shorter pulse widths were obtained when the amplifier was driven with less current at the expense of reduced output power. Pulse widths as short as 31 ps FWHM and an average power of 98 mW corresponding to a peak power of 6.3 W were obtained when a different, lower power seed laser was used. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  8. High-power fiber-coupled diode lasers with superior brightness, efficiency, and reliability

    NASA Astrophysics Data System (ADS)

    Kennedy, Keith; Hemenway, Marty; Urbanek, Wolfram; Hoener, Kylan; Price, Kirk; Bao, Ling; Dawson, David; Kanskar, Manoj; Haden, Jim

    2014-03-01

    Advances in high performance fiber coupled diode lasers continue to enable new applications as well as strengthen existing uses through progressive improvements in power and brightness [1]. These improvements are most notable in multi-kW direct diode systems and kW fiber laser platforms that effectively transform better beam quality into superior system performance and in DPSS (Diode pumped solid state) application striving to scale TEM00 (fundamental transverse mode) power. We report on our recent single-emitter based fiber-coupled product platform, the elementTM, that addressed these applications at 8xx/9xx nm with optical powers over 200W in a range of fiber core sizes down to 105um and 0.14NA (Numerical Aperture). The product is a culmination of numerous packaging improvements: improving wall plug efficiencies ( 50% electrical-to-optical) while improving volume manufacturability, enabling lower costs, improving usable chip brightness by, < 20% over previous generation chips, and increasing the reliable output power to 15W per chip. We additionally report on current developments to extend the power of the product platform to as high as 300W. This will be realized primarily through new chip architectures projected to further increase the useable chip brightness by an additional 20 % and correspondingly scaling reliable output powers. Second order improvements are proposed in packaging enhancements that capitalize on the increased chip power and brightness as well as expand the package's thermal capabilities. Finally, an extended performance roadmap will translate expected power advances and increasing volumes into a projection of relative $/W decreases over the next several years.

  9. Thermal analysis in high power GaAs-based laser diodes

    NASA Astrophysics Data System (ADS)

    Xueqin, Gong; Shiwei, Feng; Yuan, Yue; Junwei, Yang; Jingwei, Li

    2016-04-01

    The thermal characteristics of 808 nm AlGaAs/GaAs laser diodes (LDs) are analyzed via electrical transient measurements and infrared thermography. The temperature rise and thermal resistance are measured at various input currents and powers. From the electrical transient measurements, it is found that there is a significant reduction in thermal resistance with increasing power because of the device power conversion efficiency. The component thermal resistance that was obtained from the structure function showed that the total thermal resistance is mainly composed of the thermal resistance of the sub-mount rather than that of the LD chip, and the thermal resistance of the sub-mount decreases with increasing current. The temperature rise values are also measured by infrared thermography and are calibrated based on a reference image, with results that are lower than those determined by electrical transient measurements. The difference in the results is caused by the limited spatial resolution of the measurements and by the signal being captured from the facet rather than from the junction of the laser diode. Project supported by the National Natural Science Foundation of China (Nos. 61376077, 61201046, 61204081).

  10. Ultrasensitive, real-time trace gas detection using a high-power, multimode diode laser and cavity ringdown spectroscopy.

    PubMed

    Karpf, Andreas; Qiao, Yuhao; Rao, Gottipaty N

    2016-06-01

    We present a simplified cavity ringdown (CRD) trace gas detection technique that is insensitive to vibration, and capable of extremely sensitive, real-time absorption measurements. A high-power, multimode Fabry-Perot (FP) diode laser with a broad wavelength range (Δλlaser∼0.6  nm) is used to excite a large number of cavity modes, thereby reducing the detector's susceptibility to vibration and making it well suited for field deployment. When detecting molecular species with broad absorption features (Δλabsorption≫Δλlaser), the laser's broad linewidth removes the need for precision wavelength stabilization. The laser's power and broad linewidth allow the use of on-axis cavity alignment, improving the signal-to-noise ratio while maintaining its vibration insensitivity. The use of an FP diode laser has the added advantages of being inexpensive, compact, and insensitive to vibration. The technique was demonstrated using a 1.1 W (λ=400  nm) diode laser to measure low concentrations of nitrogen dioxide (NO2) in zero air. A sensitivity of 38 parts in 1012 (ppt) was achieved using an integration time of 128 ms; for single-shot detection, 530 ppt sensitivity was demonstrated with a measurement time of 60 μs, which opens the door to sensitive measurements with extremely high temporal resolution; to the best of our knowledge, these are the highest speed measurements of NO2 concentration using CRD spectroscopy. The reduced susceptibility to vibration was demonstrated by introducing small vibrations into the apparatus and observing that there was no measurable effect on the sensitivity of detection. PMID:27411209

  11. Laser performance and thermal lensing in high-power diode-pumped Yb:KGW with athermal orientation

    NASA Astrophysics Data System (ADS)

    Hellström, J. E.; Bjurshagen, S.; Pasiskevicius, V.

    2006-04-01

    A comparative, experimental study of the high-power diode-pumped laser performance and thermal lensing properties between standard b-cut Yb:KGW and Yb:KGW cut along an athermal direction is presented. The results show that thermal lens properties in both the b-cut and the athermal direction-cut crystals are determined by anisotropic thermal expansion in Yb:KGW. Thermal gradients due to the pump beam cause thermal lensing even in the athermal direction-cut geometry. The thermal lens is much weaker and less astigmatic in the athermal direction-cut crystal, for the same absorbed power. These properties allow generation of better-quality laser beams with the athermal direction-cut crystal as compared to the b-cut crystal.

  12. High-efficiency high-power QCW diode-side-pumped zigzag Nd:YAG ceramic slab laser

    NASA Astrophysics Data System (ADS)

    Chen, Y.; Liu, W.; Bo, Y.; Jiang, B.; Xu, J.; Li, J.; Xu, Y.; Pan, Y.; Xu, J. L.; Feng, X.; Guo, Y.; Shen, Y.; Yang, F.; Yuan, L.; Yuan, H.; Peng, Q.; Cui, D.; Xu, Z.

    2013-04-01

    A high-efficiency high-power diode-side-pumped quasi-continuous wave (QCW) Nd:YAG ceramic slab laser using zigzag optical path was demonstrated. With an integrating sphere technique, the scattering and absorption coefficient of the ceramic slab were measured to be 0.0024 and 0.0016 cm-1 at 1,064 nm, respectively. Under a pump power of 6.69 kW, an average output power of 2.44 kW at 1,064 nm with a repetition rate of 400 Hz was achieved, corresponding to an optical-to-optical efficiency of 36.5 %. As far as we know, this is the highest conversion efficiency reported for QCW side-pumped single slab Nd:YAG ceramic laser.

  13. Thermal Lensing in a High Power Diode-Pumped Continuous Wave Yb+3:KY(WO4)2 Laser

    NASA Astrophysics Data System (ADS)

    Mirzaeian, Hamidreza

    High power diode-pumped solid state (DPSS) lasers are a rapidly growing technology that is attractive for various applications in scientific and industrial fields. DPSS lasers are highly efficient, reliable and durable with superior beam quality when compared to flash-lamp pumped lasers. Double-tungstate crystals such as potassium yttrium tungstate Yb:KY(WO4)2 (Yb:KYW) are one of the most popular active materials used in DPSS lasers for generation of continuous wave radiation and ultrashort (i.e. femtosecond, 10-15 s) pulses with high average output power. The high pump power of laser diodes results in considerable heat generation in a laser crystal that in turn causes thermal lensing effect. Thermal lensing affects the performance and stability of a resonator, and plays an important role in limiting the output power and degrading the beam quality of solid state lasers. Despite these facts, no detailed studies of thermal effects in Yb:KYW lasers were reported to date. In this work thermal lensing in a diode-pumped Ng-cut Yb:KYW laser operating at the wavelength of 1.04 ?m was characterized. A maximum output power of 3.5 W with a nearly diffraction limited output beam (M 2 < 1.2) was achieved under the absorbed pump power of 13.8 W. The focal lengths of the induced thermal lenses were obtained from the laser output beam size measurements at various incident pump power levels and ABCD matrix analysis. At maximum output power the focal length of the induced thermal lens was found to be 814 mm for the Nm direction (horizontal) and 144 mm for the Np direction (vertical). Thermal lens sensitivity factors were 1.26 m-1/W and 0.32 m-1/W for the Np and Nm directions, respectively. This highly astigmatic thermal lensing can be explained by strong anisotropy of thermo-optical properties of the crystal and its cooling geometry. In addition, the finite element analysis (FEA) method was employed to obtain the focal lengths of the induced thermal lens inside the crystal

  14. Laser diode-pumped dual-cavity high-power fiber laser emitting at 1150  nm employing hybrid gain.

    PubMed

    Chen, Yizhu; Xiao, Hu; Xu, Jiangming; Leng, Jinyong; Zhou, Pu

    2016-05-10

    We demonstrate a laser diode-pumped dual-cavity high-power fiber laser emitting at 1150 nm. The laser employs Yb and Raman gains simultaneously. The fiber laser with a simple structure achieves high-efficiency operation while efficiently suppressing the amplified spontaneous emission and parasitic oscillation. The maximum output power at 1150 nm is 110.8 W, with an optical-to-optical efficiency of 57%. Further power scaling at 1150 nm is expected with the optimization of the system design. PMID:27168299

  15. High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm

    SciTech Connect

    Gorlachuk, P V; Ryaboshtan, Yu L; Ladugin, M A; Padalitsa, A A; Marmalyuk, A A; Kurnosov, V D; Kurnosov, K V; Zhuravleva, O V; Romantsevich, V I; Chernov, R V; Ivanov, A V; Simakov, V A

    2013-09-30

    This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range 1.5 – 1.6 μm. We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a reduction in their internal optical loss. Characterisation results are presented for laser diodes based on the proposed heterostructures. (lasers)

  16. Miniature long-range light beam transmitter resorting to a high-power broad area laser diode

    NASA Astrophysics Data System (ADS)

    Yue, Wenjing; Lee, Sang-Shin

    2014-08-01

    A miniature long-range light beam transmitter, which taps into a high-power broad area laser diode (BALD), was realized to exhibit a uniform detectable width. An effective model was proposed to practically emulate the multimode characteristics of the beam generated by the BALD. The model, solely based on the emitting region and far-field divergence angle pertaining to the LD, is established through an incoherent superposition of multiple normalized Hermit-Gaussian modes. The feasibility of the proposed model was successfully verified in terms of the calculated and observed irradiance distributions of the light beams. A long-range light beam transmitter was then designed and constructed taking advantage of the BALD source in conjunction with a beam shaper. The manufactured transmitter was corroborated to provide an infrared beam with a constant detectable width of ~1 m, over a distance ranging up to 400 m, for a predefined threshold level.

  17. Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

    SciTech Connect

    Winterfeldt, M. Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G.

    2014-08-14

    GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPP{sub lat}) at high power. An experimental study of the factors limiting BPP{sub lat} is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910 nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPP{sub lat} is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPP{sub lat}, whose influence on total BPP{sub lat} remains small, provided the overall polarization purity is >95%.

  18. Research on synchronization of 15 parallel high gain photoconductive semiconductor switches triggered by high power pulse laser diodes

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Xia, Liansheng; Chen, Yi; Liu, Yi; Yang, Chao; Ye, Mao; Deng, Jianjun

    2015-01-01

    The synchronization of 15 parallel high gain gallium arsenide photoconductive semiconductor switches (GaAs PCSS) has been researched aiming to get higher output voltage. Each PCSS is triggered independently by a high power pulse laser diode. The pulse width, energy, peak power, and central wavelength of the laser pulse are approximately 18 ns, 360 μJ, 20 kW, and 905 nm, respectively. In the stacked Blumlein transmission lines structure, the synchronous conduction of 15 parallel GaAs PCSSs has been achieved by offering optimized bias voltage and laser parameters. The method of synchronization calculation is given, and the synchronization of the 15 parallel GaAs PCSSs is measured as 775 ps. Furthermore, influences of the bias voltage, laser parameters on the synchronization are analyzed. In the output terminal, superimposed by the output voltages of 15 Blumlein transmission lines, the total output voltage reaches up to 328 kV, which is the highest output voltage of GaAs PCSSs that has been reported so far.

  19. About the physical meaning of the critical temperature for catastrophic optical damage in high power quantum well laser diodes

    NASA Astrophysics Data System (ADS)

    Souto, J.; Pura, J. L.; Jiménez, J.

    2016-02-01

    It is usually assumed that the catastrophic optical damage of high power laser diodes is launched when a critical local temperature (T c) is reached; temperatures ranging from 120 °C to 200 °C were experimentally reported. However, the physical meaning of T c in the degradation process is still unclear. In this work we show that, in the presence of a local heat source in the active region, the temperature of the laser structure, calculated using finite element methods, is widely inhomogeneously distributed among the different layers forming the device. This is due to the impact that the low dimensionality and the thermal boundary resistances have on the thermal transport across the laser structure. When these key factors are explicitly considered, the quantum well (QW) temperature can be several hundred degrees higher than the temperature of the guides and cladding layers. Due to the size of the experimental probes, the measured critical temperature is a weighted average over the QW, guides, and claddings. We show the existence of a large difference between the calculated average temperature, equivalent to the experimentally measured temperature, and the peak temperature localized in the QW. A parallel study on double heterostructure lasers is also included for comparison.

  20. Single-pass UV generation at 222.5 nm based on high-power GaN external cavity diode laser.

    PubMed

    Ruhnke, N; Müller, A; Eppich, B; Güther, R; Maiwald, M; Sumpf, B; Erbert, G; Tränkle, G

    2015-05-01

    We demonstrate a compact system for single-pass frequency doubling of high-power GaN diode laser radiation. The deep UV laser light at 222.5 nm is generated in a β-BaB2O4 (BBO) crystal. A high-power GaN external cavity diode laser (ECDL) system in Littrow configuration with narrowband emission at 445 nm is used as pump source. At a pump power of 680 mW, a maximum UV power of 16 μW in continuous-wave operation at 222.5 nm is achieved. This concept enables a compact diode laser-based system emitting in the deep ultraviolet spectral range. PMID:25927802

  1. High-power and highly efficient diode-cladding-pumped holmium-doped fluoride fiber laser operating at 2.94 microm.

    PubMed

    Jackson, Stuart D

    2009-08-01

    A high-power diode-cladding-pumped Ho(3+), Pr(3+)-doped fluoride glass fiber laser is demonstrated. The laser produced a maximum output power of 2.5 W at a slope efficiency of 32% using diode lasers emitting at 1,150 nm. The long-emission wavelength of 2.94 microm measured at maximum pump power, which is particularly suited to medical applications, indicates that tailoring of the proportion of Pr(3+) ions can provide specific emission wavelengths while providing sufficient de-excitation of the lower laser level. PMID:19649086

  2. Cr,Nd:Gd3Sc2Ga3O12 laser pumped by high-power visible laser diodes

    NASA Astrophysics Data System (ADS)

    Scheps, Richard

    1992-06-01

    Visible laser diodes are used to pump a co-doped Cr,Nd:Gd3Sc2Ga3O12 (Cr,Nd:GSGG) laser rod, demonstrating efficient operation at 1.06 (mu) . Using a 10 cm ROC HR output coupler, the absorbed power required to reach threshold was 938 (mu) W. The round trip losses in the 5 mm long rod were measured to be 4 X 10-3. The best slope efficiency was 42.1%, obtained with a 97% R output coupler. The photon slope efficiency was 66.8%.

  3. High-efficiency high-power diode laser beam shaping and focusing with constant optical-path length equalization

    NASA Astrophysics Data System (ADS)

    Bonora, Stefano; Villoresi, Paolo

    2006-04-01

    In this work we report on a novel optical design for beam shaping and focalization of high-power diode laser bars. The goals of our study are: the increase the optical throughput of the beam shaping device with respect to standard solutions and either to enhance the irradiance on a target or to inject the laser beam into a smaller fibre than with respect to beam shaping system based on plane surfaces. The high power diode laser bars pose serious difficulties in their optical handling due to their strong difference between the two transverse axes, which induce a strong astigmatic and asymmetric output radiation. As is well known, the beam quality is very different in the two axes called slow axis and fast axis, and in particular the slow axis is composed by the superposition of several multimodal sources. The beam quality in this axis is very low (its etendue may exceed 2000 mm mrad). On the other hand, the fast axis has a very high beam quality, near diffraction limited, although with very high divergence (30°-50°). The common solution for the application of the laser radiation is a fast axis aspheric micro lens in front of the emitters, in order to achieve its collimation. Typical values of the fast axis collimated beam are 0.7mm and less than 6mrad. However, the so obtained collimated beam is poorly focusable with a standard lens, and a few methods were proposed to overcome the problem. The more relevant solutions include: the stepped mirror technique, the plane parallel mirrors pair, micro prisms array and confocal micro lens array. Each of these techniques is based on the equalization of the beam parameter product by the subdivision of the beam in the slow axis and its reshaping. For all these techniques the efficiency spans from 50% to 70%. The best focalization results allow the coupling in a fibre of 400μm diameter, with NA-0.22. The aim of this work is the design and the realization of a new device, that is considered as target the following aspects: 1

  4. Experimental and numerical investigation on cladding of corrosion-erosion resistant materials by a high power direct diode laser

    NASA Astrophysics Data System (ADS)

    Farahmand, Parisa

    advantages due to creating coating layers with superior properties in terms of purity, homogeneity, low dilution, hardness, bonding, and microstructure. In the development of modern materials for hardfacing applications, the functionality is often improved by combining materials with different properties into composites. Metal Matrix Composite (MMC) coating is a composite material with two constituent parts, i.e., matrix and the reinforcement. This class of composites are addressing improved mechanical properties such as stiffness, strength, toughness, and tribological and chemical resistance. Fabrication of MMCs is to achieve a combination of properties not achievable by any of the materials acting alone. MMCs have attracted significant attention for decades due to their combination of wear-resistivity, corrosion-resistivity, thermal, electrical and magnetic properties. Presently, there is a strong emphasis on the development of advanced functional coatings for corrosion, erosion, and wear protection for different industrial applications. In this research, a laser cladding system equipped with a high power direct diode laser associated with gas driven metal powder delivery system was used to develop advanced MMC coatings. The high power direct diode laser used in this study offers wider beam spot, shorter wavelength and uniform power distribution. These properties make the cladding set-up ideal for coating due to fewer cladding tracks, lower operation cost, higher laser absorption, and improved coating qualities. In order to prevent crack propagation, porosity, and uniform dispersion of carbides in MMC coating, cladding procedure was assisted by an induction heater as a second heat source. The developed defect free MMC coatings were combined with nano-size particles of WC, rare earth (RE) element (La2O3), and Mo as a refractory metal to enhance mechanical properties, chemical composition, and subsequently improve the tribological performance of the coatings. The resistance

  5. Advances in single mode and high power AlGaInN laser diode technology for systems applications

    NASA Astrophysics Data System (ADS)

    Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lujca; Boćkowski, Michal; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Smalc-Koziorowska, Julita; Stanczyk, Szymon; Watson, Scott; Kelly, Antony E.

    2015-03-01

    The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.

  6. High Power Diode-End-Pumped Nd:YAG 946-nm Laser and Its Efficient Frequency Doubling

    NASA Astrophysics Data System (ADS)

    Zhou, Rui; Zhao, Shi-Yong; Cai, Zhi-Qiang; Zhang, Qiang; Wen, Wu-Qi; Ding, Xin; Wang, Peng; Ding, Li-Li; Yao, Jian-Quan

    2005-06-01

    We report a high power operation of the 4F3/2→4I9/2 transition in diode-end-pumped laser at 946 nm. The maximum output of 5.1 W is obtained with a short linear plano-concave cavity, and the slope efficiency is 24.5% at incident pump power of 23.3 W. To our knowledge, this is the highest value of the LD-pumped Nd:YAG 946 nm lasers that employ the conversional Nd:YAG rod as the gain medium. By intracavity frequency doubling with an LBO crystal, up to 982 mW cw output power in the blue spectral range at 473 nm is achieved at an incident pump power of 10.9 W with a compact three-element cavity, leading to optical-to-optical conversion efficiency of 9%. The conversion efficiency should be increased to 15.1%, if the rather low absorption coefficient of this Nd:YAG is considered.

  7. Alloying the X40CrMoV5-1 steel surface layer with tungsten carbide by the use of a high power diode laser

    NASA Astrophysics Data System (ADS)

    Dobrzański, L. A.; Bonek, M.; Hajduczek, E.; Klimpel, A.

    2005-07-01

    The paper presents the effect of alloying with tungsten carbide on properties of the X40CrMoV5-1 steel surface layer, using the high power diode laser (HPDL). Selection of laser operating conditions is discussed, as well as thickness of the alloying layer, and their influence on structure and chemical composition of the steel. Analysis of the influence of the process conditions on the thicknesses of the alloyed layer and heat-affected zone is presented.

  8. The Use of Large Transparent Ceramics in a High Powered, Diode Pumped Solid State Laser

    SciTech Connect

    Yamamoto, R; Bhachu, B; Cutter, K; Fochs, S; Letts, S; Parks, C; Rotter, M; Soules, T

    2007-09-24

    The advent of large transparent ceramics is one of the key enabling technological advances that have shown that the development of very high average power compact solid state lasers is achievable. Large ceramic neodymium doped yttrium aluminum garnet (Nd:YAG) amplifier slabs are used in Lawrence Livermore National Laboratory's (LLNL) Solid State Heat Capacity Laser (SSHCL), which has achieved world record average output powers in excess of 67 kilowatts. We will describe the attributes of using large transparent ceramics, our present system architecture and corresponding performance; as well as describe our near term future plans.

  9. Effect of mechanical polishing on corrosion behavior of Hastelloy C22 coating prepared by high power diode laser cladding

    NASA Astrophysics Data System (ADS)

    Wang, Qin-Ying; Bai, Shu-Lin; Zhao, Yun-Hong; Liu, Zong-De

    2014-06-01

    Hastelloy C22 coatings were prepared on mild steel by high power diode laser cladding technique. In order to investigate the effect of mechanical polishing on corrosion behavior, the coatings with original surface (coating C1) and new surfaces after mechanical polishing away of 0.3 mm (coating C2) and 0.6 mm (coating C3) in depth were studied. Their microstructures and compositions were measured, and corrosion resistance in seawater was studied. The planar, cellular and dendritic solidifications were found from the coating/substrate interface to the top surface of coatings. In coating C1, smallest size primary solidification containing mainly Ni and largest quantity of eutectic networks composed of Cr, Mo and W are dominant, and harmful carbide M(Cr, W)2C is found. While Mo6Ni6C phase exists only in coatings C2 and C3. The open circuit potential and electrochemical impedance spectroscopy of coating C1 are higher within two days, and then lower later than the other two coatings. Coatings C2 and C3 display larger stable radius of capacitive loop and lower corrosion current density owing to higher contents of Cr and Mo, as well as no harmful carbide at surface, which reveals higher corrosion resistance and lower corrosion rate than coating C1. Consequently, properly mechanical polishing of original coating surface is beneficial for improving its corrosion resistance.

  10. Water Droplet Erosion Behavior of High-Power Diode Laser Treated 17Cr4Ni PH Stainless Steel

    NASA Astrophysics Data System (ADS)

    Mann, B. S.

    2014-05-01

    This article deals with water droplet erosion (WDE) behavior of high-power diode laser (HPDL) treated 17Cr4Ni PH stainless steel. After HPDL treatment, the water droplet erosion resistance (WDER) of 17Cr4Ni PH stainless steel has not improved. The main reason is the surface hardness, which has not improved after HPDL treatment though the microstructure has become much finer. On the other hand, precipitation hardening of the alloy at 490°C for 3 h has resulted in improved WDER more than twice. This is because of its increased microhardness and improved modified ultimate resilience (MUR), and formation of fine grained microstructure. The WDER has been correlated with MUR, a single mechanical property, based upon microhardness, ultimate tensile strength, and Young's modulus. WDERs of HPDL treated, untreated, and precipitation hardened 17Cr4Ni PH stainless steel samples were determined using a WDE test facility as per ASTM G73-1978. The WDE damage mechanism, compared on the basis of MUR and scanning electron micrographs, is discussed and reported in this article.

  11. Adjustable mounting device for high-volume production of beam-shaping systems for high-power diode lasers

    NASA Astrophysics Data System (ADS)

    Haag, Sebastian; Bernhardt, Henning; Rübenach, Olaf; Haverkamp, Tobias; Müller, Tobias; Zontar, Daniel; Brecher, Christian

    2015-02-01

    In many applications for high-power diode lasers, the production of beam-shaping and homogenizing optical systems experience rising volumes and dynamical market demands. The automation of assembly processes on flexible and reconfigurable machines can contribute to a more responsive and scalable production. The paper presents a flexible mounting device designed for the challenging assembly of side-tab based optical systems. It provides design elements for precisely referencing and fixating two optical elements in a well-defined geometric relation. Side tabs are presented to the machine allowing the application of glue and a rotating mechanism allows the attachment to the optical elements. The device can be adjusted to fit different form factors and it can be used in high-volume assembly machines. The paper shows the utilization of the device for a collimation module consisting of a fast-axis and a slow-axis collimation lens. Results regarding the repeatability and process capability of bonding side tab assemblies as well as estimates from 3D simulation for overall performance indicators achieved such as cycle time and throughput will be discussed.

  12. Maximizing coupling-efficiency of high-power diode lasers utilizing hybrid assembly technology

    NASA Astrophysics Data System (ADS)

    Zontar, D.; Dogan, M.; Fulghum, S.; Müller, T.; Haag, S.; Brecher, C.

    2015-03-01

    In this paper, we present hybrid assembly technology to maximize coupling efficiency for spatially combined laser systems. High quality components, such as center-turned focusing units, as well as suitable assembly strategies are necessary to obtain highest possible output ratios. Alignment strategies are challenging tasks due to their complexity and sensitivity. Especially in low-volume production fully automated systems are economically at a disadvantage, as operator experience is often expensive. However reproducibility and quality of automatically assembled systems can be superior. Therefore automated and manual assembly techniques are combined to obtain high coupling efficiency while preserving maximum flexibility. The paper will describe necessary equipment and software to enable hybrid assembly processes. Micromanipulator technology with high step-resolution and six degrees of freedom provide a large number of possible evaluation points. Automated algorithms are necess ary to speed-up data gathering and alignment to efficiently utilize available granularity for manual assembly processes. Furthermore, an engineering environment is presented to enable rapid prototyping of automation tasks with simultaneous data ev aluation. Integration with simulation environments, e.g. Zemax, allows the verification of assembly strategies in advance. Data driven decision making ensures constant high quality, documents the assembly process and is a basis for further improvement. The hybrid assembly technology has been applied on several applications for efficiencies above 80% and will be discussed in this paper. High level coupling efficiency has been achieved with minimized assembly as a result of semi-automated alignment. This paper will focus on hybrid automation for optimizing and attaching turning mirrors and collimation lenses.

  13. Low-profile flat pack: a high-power fiber coupled laser diode package for low-cost high-reliability applications

    NASA Astrophysics Data System (ADS)

    Singh, Raj; Heminway, Trebor; Krasnick, Richard; Griffin, Peter; Powers, Michael

    2004-06-01

    In recent years, high power diode lasers have become established in many applications like material processing, fiber laser and amplifier pumping, free space communication, direct printing and medical diagnosis and procedures. In particular, advances in laser diode packaging have resulted in devices with high wall-plug efficiency, enhanced reliability and low cost of ownership. Despite the advances of recent years, packaging, testing and reliability assurance still account for a majority of the cost of a fiber coupled laser diode. At MKPA-Panasonic, we are developing new fiber coupled laser diode package designs to enable low cost, high reliability assemblies that are amenable to high volume manufacturing. In this paper, we present a new low-profile, uncooled package for single-emitter high power laser diode packaging applications. Detailed design information, thermal modeling and reliability data for this small footprint, low profile optical flat package (OFP) with 4W output power in a 0.15NA, 100 micron core fiber is presented. The unique packaging technology resulting in good thermal and reliability performance in uncooled environments is discussed. All the assembly processes for the package are performed in a flux-free environment. The package is devoid of epoxy and can be hermetically sealed for high reliability operation. A reduced bill of materials and assembly steps result in significant cost savings. The design eliminates all non-vertical assembly processes for ease of assembly. Other features include passive die attach and integrated fiber mount. This package is specifically designed to address the fiber laser pump, industrial material processing, solid state laser pumping, printing and medical application markets.

  14. High power resonantly diode-pumped σ-configuration Er3+:YVO4 laser at 1593.5 nm

    NASA Astrophysics Data System (ADS)

    Ter-Gabrielyan, N.; Fromzel, V.; Lukasiewicz, T.; Ryba-Romanowski, W.; Dubinskii, M.

    2011-07-01

    Laser operation of an eyesafe 1593.5-nm laser based on Er3+-doped yttrium orthovanadate single crystal resonantly-pumped by a spectrally-narrowed InGaAsP/InP diode bar stack is demonstrated for the first time. Cryogenically-cooled Er3+:YVO4 laser pumped at 1534 nm performed with maximum slope efficiency of ~ 70% and maximum quasi-continuous-wave (Q-CW) power of 59.8 W.

  15. High power and high efficiency kW 88x-nm multi-junction pulsed diode laser bars and arrays

    NASA Astrophysics Data System (ADS)

    Chen, Zhigang; Bai, John; Dong, Weimin; Guan, Xingguo; Zhang, Shiguo; Elim, Sandrio; Bao, Ling; Grimshaw, Mike; Devito, Mark; Kanskar, Manoj

    2014-03-01

    There is great interest in the development of high-power, high-efficiency and low cost QCW 88x-nm diode laser bars and arrays for pumping solid state lasers. We report on the development of kW 88x-nm diode laser bars that are based on a bipolar cascade design, in which multiple lasers are epitaxially grown in electrical series on a single substrate. Multiple laser junctions, each of which is based on nLight's high performance 88x-nm epitaxial design, are separated by low resistance tunnel junctions with resistance as low as 8.0x10-6 Ω-cm2. Optimization of bar geometry and wafer fabrication processes was explored for electrical and optical performance improvement in double-junction diode lasers. A QCW power of 630 W was demonstrated in a 3-mm wide mini-bar with 3-mm cavity length. Peak efficiency of 61% was measured with 200 s and 14 Hz pulses, at a heatsink temperature of 10 °C. Further power scaling was demonstrated in a 1-cm wide bar with 3-mm cavity length, where a record high peak power of 1.77 kW was measured at 1 kA drive current. Ongoing work for further power scaling includes development of triple-junction diode laser bars and double-junction bar-stack that emits < 10kW optical power.

  16. A portable high-power diode laser-based single-stage ceramic tile grout sealing system

    NASA Astrophysics Data System (ADS)

    Lawrence, J.; Schmidt, M. J. J.; Li, L.; Edwards, R. E.; Gale, A. W.

    2002-02-01

    By means of a 60 W high-power diode laser (HPDL) and a specially developed grout material the void between adjoining ceramic tiles has been successfully sealed. A single-stage process has been developed which uses a crushed ceramic tile mix to act as a tough, inexpensive bulk substrate and a glazed enamel surface to provide an impervious surface glaze. The single-stage ceramic tile grout sealing process yielded seals produced in normal atmospheric conditions that displayed no discernible cracks and porosities. The single-stage grout is simple to formulate and easy to apply. Tiles were successfully sealed with power densities as low as 200 kW/ mm2 and at rates of up to 600 mm/ min. Bonding of the enamel to the crushed ceramic tile mix was identified as being primarily due to van der Waals forces and, on a very small scale, some of the crushed ceramic tile mix material dissolving into the glaze. In terms of mechanical, physical and chemical characteristics, the single-stage ceramic tile grout was found to be far superior to the conventional epoxy tile grout and, in many instances, matched and occasionally surpassed that of the ceramic tiles themselves. What is more, the development of a hand-held HPDL beam delivery unit and the related procedures necessary to lead to the commercialisation of the single-stage ceramic tile grout sealing process are presented. Further, an appraisal of the potential hazards associated with the use of the HPDL in an industrial environment and the solutions implemented to ensure that the system complies with the relevant safety standards are given.

  17. High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO₄ laser at 1342 nm with a semiconductor saturable absorber mirror.

    PubMed

    Li, Fang-Qin; Liu, Ke; Han, Lin; Zong, Nan; Bo, Yong; Zhang, Jing-Yuan; Peng, Qin-Jun; Cui, Da-Fu; Xu, Zu-Yan

    2011-04-15

    A high-power 880-nm diode-directly-pumped passively mode-locked 1342 nm Nd:YVO₄ laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The laser mode radii in the laser crystal and on the SESAM were optimized carefully using the ABCD matrix formalism. An average output power of 2.3 W was obtained with a repetition rate of 76 MHz and a pulse width of 29.2 ps under an absorbed pump power of 12.1 W, corresponding to an optical-optical efficiency of 19.0% and a slope efficiency of 23.9%, respectively. PMID:21499398

  18. High-power diode lasers for the 1.9 to 2.2 μm wavelength range

    NASA Astrophysics Data System (ADS)

    Kelemen, Márc T.; Gilly, Jürgen; Moritz, Rudolf; Rattunde, Marcel; Schmitz, Johannes; Wagner, Joachim

    2008-02-01

    GaSb based diode laser both as single emitters and as arrays, emitting between 1.9 and 2.2 μm, have a huge potential especially for materials processing, medical applications and as optical pump sources for solid state laser systems emitting in the 2-4 μm wavelength range. Determined by the absorption characteristics of thermoplastic materials at wavelengths around 2 μm, the light emitted by the diode laser will be absorbed by the material itself and can thus be used for marking and welding without the addition of e.g. colour pigments. We will present results on different (AlGaIn)(AsSb) quantum-well diode laser single emitters and linear laser arrays, the latter consisting of 20 emitters on a 1 cm long bar, emitting at different wavelengths between 1.9 and 2.2 μm. To improve on the typically poor fast axis beam divergence of diode lasers emitting at these wavelengths, we abandoned the broadened waveguide concept and changed over to a new waveguide design which features a rather narrow waveguide core. This results in a remarkable reduction in fast axis beam divergence to 43° FWHM for the new waveguide design. Electro-optical and thermal behaviour and the wavelength tunability by current and temperature have been carefully investigated in detail. For single emitters cw output powers of 2 W have been demonstrated. For diode laser arrays mounted on actively cooled heat sinks, more than 20 W in continuous-wave mode have been achieved at a heat sink temperature of 20 °C resulting in wall-plug efficiencies of more than 26%.

  19. High-power efficient cw and pulsed lasers based on bulk Yb : KYW crystals with end diode pumping

    SciTech Connect

    Kim, G H; Yang, G H; Lee, D S; Kulik, Alexander V; Sall', E G; Chizhov, S A; Yashin, V E; Kang, U

    2012-04-30

    End-diode-pumped lasers based on one and two Yb : KYW crystals operating in cw and Q-switched regimes, as well as in the regime of mode-locking, are studied. The single-crystal laser generated stable ultrashort (shorter than 100 fs) laser pulses at wavelengths of 1035 and 1043 nm with an average power exceeding 1 W. The average output power of the two-crystal laser exceeded 18 W in the cw regime and 16 W in the Q-switched regime with a slope efficiency exceeding 30%.

  20. Coupling of a high-power tapered diode laser beam into a single-mode-fiber within a compact module

    NASA Astrophysics Data System (ADS)

    Jedrzejczyk, D.; Sahm, A.; Carstens, C.; Urban, G.; Pulka, M.; Eppich, B.; Scholz, F.; Paschke, K.

    2015-03-01

    In this work, coupling of radiation generated by a distributed Bragg reflector (DBR) tapered diode laser around 1064 nm into a single-mode-fiber (SMF) within a butterfly module with a footprint < 10 cm2 is demonstrated. The module comprises temperature stabilizing components, a brightness maintaining micro optical assembly mounted with submicrometer precision and a standard FC/APC output connector. The aim of the introduced concept is to improve the beam quality and to eliminate the current dependent beam astigmatism, characteristic for tapered diode lasers and amplifiers, and, thus, provide an efficient, multi-Watt laser light source characterized by a narrow-band spectrum and a stigmatic, nearly Gaussian laser beam independent of the operating point. A maximum power ex SMF of 2.5 W at a coupling efficiency of 57 % is reached in the presented butterfly module.

  1. High-power dual-wavelength external-cavity diode laser based on tapered amplifier with tunable terahertz frequency difference.

    PubMed

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2011-07-15

    Tunable dual-wavelength operation of a diode laser system based on a tapered diode amplifier with double-Littrow external-cavity feedback is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5.0 THz. An output power of 1.54 W is achieved with a frequency difference of 0.86 THz, the output power is higher than 1.3 W in the 5.0 THz range of frequency difference, and the amplified spontaneous emission intensity is more than 20 dB suppressed in the range of frequency difference. To our knowledge, this is the highest output power from a dual-wavelength diode laser system operating with tunable terahertz frequency difference. PMID:21765489

  2. AlGaInN laser diode bar and array technology for high-power and individual addressable applications

    NASA Astrophysics Data System (ADS)

    Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Boćkowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.

    2016-04-01

    The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and novel applications for medical, industrial, display and scientific purposes. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with high optical powers of >100mW with high reliability. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. We demonstrate the operation of monolithic AlGaInN laser bars with up to 20 emitters giving optical powers up to 4W cw at ~395nm with a common contact configuration. These bars are suitable for optical pumps and novel extended cavity systems. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.

  3. Studies of the degradation mechanisms in high-power diode lasers using multi-channel micro-thermography

    NASA Astrophysics Data System (ADS)

    Kozłowska, Anna; Tomm, Jens W.; Wawrzyniak, Piotr; Maląg, Andrzej; Weik, Fritz; Latoszek, Mateusz

    2005-09-01

    We demonstrate the applicability of imaging thermography for investigations of mechanisms associated with gradual degradation in diode lasers. The introduction of two spectral channels provides the means for separate observation of deep level luminescence and thermal radiation emitted according to Planck's law. In the near IR region we found the signal detected by the camera to be mainly affected by mid-gap deep-level luminescence. An intensity increase of the luminescence signal for an aged diode laser compared to an unaged device is noticed. It can be explained by an increase of deep level defect concentration during the aging. In the mid IR, we mainly encounter thermal radiation, which can be used for the analysis of the thermal properties of devices. In present work the thermal behavior of the device subjected to an aging of 3000 hours is analyzed. A significant increase of device temperature is noticed.

  4. Unveiling laser diode “fossil” and the dynamic analysis for heliotropic growth of catastrophic optical damage in high power laser diodes

    NASA Astrophysics Data System (ADS)

    Zhang, Qiang; Xiong, Yihan; An, Haiyan; Boucke, Konstantin; Treusch, Georg

    2016-01-01

    Taking advantage of robust facet passivation, we unveil a laser “fossil” buried within a broad area laser diode (LD) cavity when the LD was damaged by applying a high current. For the first time, novel physical phenomena have been observed at these dramatically elevated energy densities within the nanoscale LD waveguide. The observation of the laser “fossil” is interpreted with different mechanisms, including: the origination of bulk catastrophic optical damage (COD) due to locally high energy densities, heliotropic COD growth, solid-liquid-gas phase transformations, strong longitudinal phonon cooling effect on the molten COD wave front, and the formation of patterns due to laser lateral modes. For the first time the COD propagation is analyzed temporally by an acoustic phonon bouncing model and the COD velocity is extrapolated to be exponentially decreasing from more than 800 μm/μs to a few μm/μs within a 20 μs time period as the energy density dissipates.

  5. Unveiling laser diode “fossil” and the dynamic analysis for heliotropic growth of catastrophic optical damage in high power laser diodes

    PubMed Central

    Zhang, Qiang; Xiong, Yihan; An, Haiyan; Boucke, Konstantin; Treusch, Georg

    2016-01-01

    Taking advantage of robust facet passivation, we unveil a laser “fossil” buried within a broad area laser diode (LD) cavity when the LD was damaged by applying a high current. For the first time, novel physical phenomena have been observed at these dramatically elevated energy densities within the nanoscale LD waveguide. The observation of the laser “fossil” is interpreted with different mechanisms, including: the origination of bulk catastrophic optical damage (COD) due to locally high energy densities, heliotropic COD growth, solid-liquid-gas phase transformations, strong longitudinal phonon cooling effect on the molten COD wave front, and the formation of patterns due to laser lateral modes. For the first time the COD propagation is analyzed temporally by an acoustic phonon bouncing model and the COD velocity is extrapolated to be exponentially decreasing from more than 800 μm/μs to a few μm/μs within a 20 μs time period as the energy density dissipates. PMID:26740303

  6. High-power laser diodes emitting light above 1100 nm with a small vertical divergence angle of 13 degrees.

    PubMed

    Pietrzak, Agnieszka; Wenzel, Hans; Erbert, Götz; Tränkle, Günther

    2008-10-01

    Laser diodes with highly strained InGaAs quantum wells, emitting at 1130 nm, embedded in a GaAs waveguide were investigated. This Letter reviews the design of the vertical structure for enclosing high output power in angles smaller than 18 degrees . Example designs were processed to 200 microm stripe-width lasers with an 8-mm-long optical cavity. When these are mounted on C mounts, they give an output power of 38 W under quasi-cw operation from a single emitter. PMID:18830347

  7. High-power diode side-pumped Nd:YAG laser on the low gain three lines near 1.1 μm

    NASA Astrophysics Data System (ADS)

    Wang, Z.; Bo, Y.; Xie, S.; Li, C.; Xu, Y.; Yang, F.; Xu, J.; Peng, Q.; Zhang, J.; Cui, D.; Xu, Z.

    2011-07-01

    We demonstrate a high-power diode side-pumped Nd:YAG laser on the low gain three lines near 1.1 μm. By tuning the tilting angle of a solid etalon in the cavity, the laser can be selectively operated at 1112, 1116 and 1123 nm either in continuous-wave (CW) mode or in actively Q-switched (QS) mode, respectively. The highest average CW output powers were 75, 47 and 71 W at 1112, 1116 and 1123 nm, respectively. The transmittances of the etalon were calculated to analyze the performance of the laser at the three lines. Furthermore, a computational model of a three-wavelength laser based on rate equations was employed to examine the line selectivity of the three lines near 1.1 μm at different tilting angles of the etalon.

  8. High-power diode-end-pumped laser with multi-segmented Nd-doped yttrium vanadate.

    PubMed

    Huang, Y J; Chen, Y F

    2013-07-01

    A Nd:YVO4 crystal consisting of three segments with different doping concentrations is originally developed for power scaling in diode-end-pumped solid-state laser. We systematically make a comparison of laser characteristics between the multi-segmented and conventional composite crystals to show the feasibility of using gain medium with multiple doping concentrations for power scale-up in end-pumped laser without introducing significant thermally accompanied effects. We further construct a dual-end-pumped actively Q-switched oscillator at 1064 nm to verify the usefulness of our crystal design, where the largest pulse energy of 1.06 mJ and the highest output power of 45 W are efficiently generated. PMID:23842393

  9. High-power, micro-integrated diode laser modules at 767 and 780 nm for portable quantum gas experiments.

    PubMed

    Schiemangk, Max; Lampmann, Kai; Dinkelaker, Aline; Kohfeldt, Anja; Krutzik, Markus; Kürbis, Christian; Sahm, Alexander; Spießberger, Stefan; Wicht, Andreas; Erbert, Götz; Tränkle, Günther; Peters, Achim

    2015-06-10

    We present micro-integrated diode laser modules operating at wavelengths of 767 and 780 nm for cold quantum gas experiments on potassium and rubidium. The master-oscillator-power-amplifier concept provides both narrow linewidth emission and high optical output power. With a linewidth (10 μs) below 1 MHz and an output power of up to 3 W, these modules are specifically suited for quantum optics experiments and feature the robustness required for operation at a drop tower or on-board a sounding rocket. This technology development hence paves the way toward precision quantum optics experiments in space. PMID:26192832

  10. Ex vivo evaluation of safety and efficacy of vaporization of the prostate using a 300 W high-power laser diode with the wavelength of 980 nm

    NASA Astrophysics Data System (ADS)

    Takada, Junya; Honda, Norihiro; Hazama, Hisanao; Awazu, Kunio

    2014-03-01

    Laser vaporization of the prostate is one of the promising technique for less-invasive treatment of benign prostatic hyperplasia. However, shorter operative duration and higher hemostatic ability are expected. The wavelength of 980 nm offers a high simultaneous absorption by water and hemoglobin, so that it combines the efficient vaporization with good hemostasis. Therefore, we have evaluated the safety and efficacy of vaporization of the prostate using a recently developed 300 W high-power laser diode with the wavelength of 980 nm. First, validity of bovine prostate tissue as the sample was confirmed by measuring the optical properties of bovine and human prostate tissue using a double integrating sphere optical system. Next, contact and non-contact ex vivo irradiations were performed for various irradiation powers and times, and vaporized and coagulated depths were measured. In the contact irradiation, the vaporized depth at the power of 300 W was significantly deeper than that at the power of 100 W, while the difference was relatively smaller for the coagulated depths at 300 and 100 W. In the non-contact irradiation, coagulation as thick as that in the contact irradiation was observed almost without vaporization. Therefore, it is suggested that the treatment in the contact irradiation using the high-power laser diode can vaporize the prostate more efficiently without increasing the risk of perforation. Hemostasis with the coagulation would be possible in both irradiation methods. To prevent the postoperative perforation, operators need to understand the relationship between the coagulated depth and the irradiation conditions.

  11. High power solid state lasers

    SciTech Connect

    Weber, H.

    1988-01-01

    These proceedings discuss the following subjects: trends in materials processing with laser radiation; slabs and high power systems; glasses and new crystals; solid state lasers at HOYA Corp.; lamps, resonators and transmission; glasses as active materials for high average power solid state lasers; flashlamp pumped GGG-crystals; alexandrite lasers; designing telescope resonators; mode operation of neodymium: YAG lasers; intracavity frequency doubling with KTP crystal and thermal effects in cylinder lasers.

  12. High-power dense wavelength division multiplexing (HP-DWDM) of frequency stabilized 9xx diode laser bars with a channel spacing of 1.5 nm

    NASA Astrophysics Data System (ADS)

    Hengesbach, Stefan; Holly, Carlo; Krauch, Niels; Witte, Ulrich; Westphalen, Thomas; Traub, Martin; Hoffmann, Dieter

    2014-03-01

    We present a compact High-Power DenseWavelength Division Multiplexer (HP-DWDM) based on Volume Bragg Gratings (VBGs) for spectrally stabilized diode lasers with a low average beam quality M2 <=50. The center wavelengths of the five input channels with a spectral spacing of 1.5 nm are 973 nm, 974.5 nm, 976 nm, 977.5 nm and 979 nm. Multiplexing efficiencies of 97%+/-2% have been demonstrated with single mode, frequency stabilized laser radiation. Since the diffraction efficiency strongly depends on the beam quality, the multiplexing efficiency decreases to 94% (M2 = 25) and 85%+/-3% (M2 = 45) if multimode radiation is overlaid. Besides, the calculated multiplexing efficiency of the radiation with M2 = 45 amounts to 87:5 %. Thus, calculations and measurements are in good agreement. In addition, we developed a dynamic temperature control for the multiplexing VBGs which adapts the Bragg wavelengths to the diode laser center wavelengths. In short, the prototype with a radiance of 70GWm-2 sr-1 consists of five spectrally stabilized and passively cooled diode laser bars with 40Woutput after beam transformation. To achieve a good stabilization performance ELOD (Extreme LOw Divergence) diode laser bars have been chosen in combination with an external resonator based on VBGs. As a result, the spectral width defined by 95% power inclusion is < 120pm for each beam source across the entire operating range from 30 A to 120 A. Due to the spectral stabilization, the output power of each bar decreases in the range of < 5 %.

  13. A convenient high power high efficiency blue cw single frequency laser by IR diode laser doubling with PPKTP

    NASA Astrophysics Data System (ADS)

    Danekar, Koustubh; Khademian, Ali; Hassan Rezaeian, Nima; Shiner, David

    2010-03-01

    We report on high efficiency resonant doubling to 486nm using periodically poled KTP. A stable blue power of 680 ± 5 mW was obtained using the 840 mW output power of a FBG stabilized PM fiber coupled IR semiconductor laser. This gives an overall conversion efficiency of 80% for generating blue. To obtain this result, all losses in the system were carefully studied and minimized. Using a similar cavity design replacing PPKTP with CLBO we are additionally investigating a second doubling stage for efficient UV generation to 243nm.

  14. High-power pulsed lasers

    SciTech Connect

    Holzrichter, J.F.

    1980-04-02

    The ideas that led to the successful construction and operation of large multibeam fusion lasers at the Lawrence Livermore Laboratory are reviewed. These lasers are based on the use of Nd:glass laser materials. However, most of the concepts are applicable to any laser being designed for fusion experimentation. This report is a summary of lectures given by the author at the 20th Scottish University Summer School in Physics, on Laser Plasma Interaction. This report includes basic concepts of the laser plasma system, a discussion of lasers that are useful for short-pulse, high-power operation, laser design constraints, optical diagnostics, and system organization.

  15. Thermal properties of high-power InGaAsP/InP stripe-geometry laser diode: calculation and analyses

    NASA Astrophysics Data System (ADS)

    Li, Hongyan; Li, Hong; Shi, Jiawei; Jin, Enshun; Gao, Dingsan

    1998-08-01

    In this paper, theoretical calculation results of dynamically thermal properties of high-power InGaAsP/InP stripe-geometry laser diode has been given based on the 2D thermal conduction model by means of finite difference. In this calculation, except for active layer heating due to nonradiative recombination and partial reabsorption of radiation, the radiative transfer of the spontaneous radiation through the wide-gap passive layers, the Joule heating is taken into account. At the same time, active region heat source is simplified as line heat source. Through the temperature profiles acquired by changing construction parameters and supplied power, we can see that temperature profiles have a certain relation with the construction parameters and supplied power. At last, the thermal resistance achieved by theory calculation compares with the laser diode thermal resistance achieved by measuring, the proportion of the crystal, the heat sink and the shell's thermal resistance is obtained. The calculation shows that a diamond film sandwiched between the crystal and the heat sink can improve the diode's thermal properties obviously.

  16. Optoacoustic response from graphene-based solutions embedded in optical phantoms by using 905-nm high-power diode-laser assemblies

    NASA Astrophysics Data System (ADS)

    Leggio, Luca; Gallego, Daniel C.; Gawali, Sandeep Babu; Dadrasnia, Ehsan; Sánchez, Miguel; Rodríguez, Sergio; González, Marta; Carpintero, Guillermo; Osiński, Marek; Lamela, Horacio

    2016-03-01

    During the last two decades, optoacoustic imaging has been developed as a novel biomedical imaging technique based on the generation of ultrasound waves by means of laser light. In this work, we investigate the optoacoustic response from graphene-based solutions by using a compact and cost-effective system based on an assembly of several 905-nm pulsed high-power diode lasers coupled to a bundle of 200-μm diameter- core optical fibers. The coupled light is conveyed into a lens system and focused on an absorber consisting of graphene-based nanomaterials (graphene oxide, reduced graphene oxide, and reduced graphene-oxide/gold-nanoparticle hybrid, respectively) diluted in ethanol and hosted in slightly scattering optical phantoms. The high absorption of these graphene-based solutions suggests their potential future use in optoacoustic applications as contrast agents.

  17. High-power diode-directly-pumped tenth-order harmonic mode-locked TEM00 Nd:YVO4 laser with 1 GHz repetition rate

    NASA Astrophysics Data System (ADS)

    Li, F.-Q.; Zong, N.; Han, L.; Tian, C.-Y.; Bo, Y.; Peng, Q.-J.; Cui, D.-F.; Xu, Z.-Y.

    2011-02-01

    A high-efficiency high-power diode-directly-pumped tenth-order harmonic mode-locked TEM00 Nd:YVO4 laser with 1 GHz repetition rate was first demonstrated. The maximum output power was 10.4 W with optical-optical efficiency of 41.8% and slope efficiency of 78.1%, respectively, the pulse width was about 30 ps at the output power of 9.6 W. Based on the large third-order nonlinearity of Nd:YVO4, the tenth-order harmonic mode-locked pulses were induced by the intensity-dependent Kerr effect and the cooperative action of counter-propagating pulses colliding in the laser crystal for a colliding-pulse-modelocking-like cavity. The pulses were further modulated by a semiconductor saturable absorber mirror.

  18. High-Power Single-Mode 2.65-micron InGaAsSb/AlInGaAsSb Diode Lasers

    NASA Technical Reports Server (NTRS)

    Frez, Clifford F.; Briggs, Ryan M.; Forouhar, Siamak; Borgentun, Carl E.; Gupta, James

    2013-01-01

    Central to the advancement of both satellite and in-situ science are improvements in continuous-wave and pulsed infrared laser systems coupled with integrated miniaturized optics and electronics, allowing for the use of powerful, single-mode light sources aboard both satellite and unmanned aerial vehicle platforms. There is a technological gap in supplying adequate laser sources to address the mid-infrared spectral window for spectroscopic characterization of important atmospheric gases. For high-power applications between 2 to 3 micron, commercial laser technologies are unsuitable because of limitations in output power. For instance, existing InP-based laser systems developed for fiber-based telecommunications cannot be extended to wavelengths longer than 2 micron. For emission wavelengths shorter than 3 micron, intersubband devices, such as infrared quantum cascade lasers, become inefficient due to band-offset limitations. To date, successfully demonstrated singlemode GaSb-based laser diodes emitting between 2 and 3 micron have employed lossy metal Bragg gratings for distributed- feedback coupling, which limits output power due to optical absorption. By optimizing both the quantum well design and the grating fabrication process, index-coupled distributed-feedback 2.65-micron lasers capable of emitting in excess of 25 mW at room temperature have been demonstrated. Specifically, lasers at 3,777/cm (2.65 micron) have been realized to interact with strong absorption lines of HDO and other isotopologues of H2O. With minor modifications of the optical cavity and quantum well designs, lasers can be fabricated at any wavelength within the 2-to-3-micron spectral window with similar performance. At the time of this reporting, lasers with this output power and wavelength accuracy are not commercially available. Monolithic ridge-waveguide GaSb lasers were fabricated that utilize secondorder lateral Bragg gratings to generate single-mode emission from InGaAsSb/ Al

  19. High Power Pulsed Gas Lasers

    NASA Astrophysics Data System (ADS)

    Witteman, W. J.

    1987-09-01

    Gas lasers have shown to be capable of delivering tens of terrawatt aspeak power or tens of kilowatt as average power. The efficiencies of most high power gas lasers are relatively high compared with other types of lasers. For instance molecular lasers, oscillating on low lying vibrational levels, and excimer lasers may have intrinsic efficiencies above 10%.The wavelengths of these gas lasers cover the range from the far infrared to the ultra-violet region, say from 12000 to 193 nm. The most important properties are the scalability, optical homogeneity of the excited medium, and the relatively low price per watt of output power. The disadvantages may be the large size of the systems and the relatively narrow line width with limited tunability compared with solid state systems producing the same peak power. High power gas lasers group into three main categories depending on the waste-heat handling capacity.

  20. The future of high power laser techniques

    NASA Astrophysics Data System (ADS)

    Poprawe, Reinhart; Loosen, Peter; Hoffmann, Hans-Dieter

    2007-05-01

    High Power Lasers have been used for years in corresponding applications. Constantly new areas and new processes have been demonstrated, developed and transferred to fruitful use in industry. With the advent of diode pumped solid state lasers in the multi-kW-power regime at beam qualities not far away from the diffraction limit, a new area of applicability has opened. In welding applications speeds could be increased and systems could be developed with higher efficiently leading also to new perspectives for increased productivity, e.g. in combined processing. Quality control is increasingly demanded by the applying industries, however applications still are rare. Higher resolution of coaxial process control systems in time and space combined with new strategies in signal processing could give rise to new applications. The general approach described in this paper emphasizes the fact, that laser applications can be developed more efficiently, more precisely and with higher quality, if the laser radiation is tailored properly to the corresponding application. In applying laser sources, the parameter ranges applicable are by far wider and more flexible compared to heat, mechanical or even electrical energy. The time frame ranges from several fs to continuous wave and this spans approximately 15 orders of magnitude. Spacewise, the foci range from several µm to cm and the resulting intensities suitable for materials processing span eight orders of magnitude from 10 3 to 10 11 W/cm2. In addition to space (power, intensity) and time (pulse) the wavelength can be chosen as a further parameter of optimization. As a consequence, the resulting new applications are vast and can be utilized in almost every market segment of our global economy (Fig. 1). In the past and only partly today, however, this flexibility of laser technology is not exploited in full in materials processing, basically because in the high power regime the lasers with tailored beam properties are not

  1. Accurate electro-optical characterization of high power density GaAs-based laser diodes for screening strategies improvement

    NASA Astrophysics Data System (ADS)

    Del Vecchio, Pamela; Deshayes, Y.; Joly, Simon; Bettiati, M.; Laruelle, F.; Béchou, L.

    2014-05-01

    In this study, we report on a methodology based on reverse and forward current-voltage curves (I-V) and on Degree of Polarization (DoP) of electroluminescence measurements on 980 nm laser diodes chip-on-submount (CoS) for the improvement of screening tests. Current-voltage curves are performed at reverse bias up to breakdown voltage (VBR) using both a high current accuracy (< 1 pA) and high voltage resolution (< 10 mV) at different submount-temperatures (20-50°C). The DoP of luminescence of such devices, related to strains in materials and effect of shear strain on the birefringence, is calculated from the simultaneous measurement of TE (LTE) and TM (LTM) polarized light emissions. We observe that application of high reverse voltages occasionally produces significant micro-plasma (MP) pre-breakdown on reverse I-V characteristics as recently observed in InGaN/GaN LEDs and assumed to be a response of electrically active defects. Comparisons between breakdown voltages and number of MP, and changes of leakage current at low forward voltage (< 0.1 V) are considered. DoP measurements are also analyzed versus temperature. Finally the usefulness of these measurements for effective screening of devices is discussed.

  2. Development of high-power diode lasers with beam parameter product below 2 mm×mrad within the BRIDLE project

    NASA Astrophysics Data System (ADS)

    Crump, P.; Decker, J.; Winterfeldt, M.; Fricke, J.; Maaßdorf, A.; Erbert, G.; Tränkle, G.

    2015-03-01

    High power broad-area diode lasers are the most efficient source of optical energy, but cannot directly address many applications due to their high lateral beam parameter product BPP = 0.25 × ΘL 95%× W95% (ΘL95% and W95% are emission angle and aperture at 95% power content), with BPP > 3 mm×mrad for W95%~90μm. We review here progress within the BRIDLE project, that is developing diode lasers with BPP < 2 mm×mrad for use in direct metal cutting systems, where the highest efficiencies and powers are required. Two device concepts are compared: narrow-stripe broad-area (NBA) and tapered lasers (TPL), both with monolithically integrated gratings. NBAs use W95% ~ 30 μm to cut-off higher order lateral modes and reduce BPP. TPLs monolithically combine a single mode region at the rear facet with a tapered amplifier, restricting the device to one lateral mode for lowest BPP. TPLs fabricated using ELoD (Extremely Low Divergence) epitaxial designs are shown to operate with BPP below 2mm×mrad, but at cost of low efficiency (<35%, due to high threshold current). In contrast, NBAs operate with BPP < 2 mm×mrad, but maintain efficiency >50% to output of > 7 W, so are currently the preferred design. In studies to further reduce BPP, lateral resonant anti-guiding structures have also been assessed. Optimized anti-guiding designs are shown to reduce BPP by 1 mm×mrad in conventional 90 μm stripe BA-lasers, without power penalty. In contrast, no BPP improvement is observed in NBA lasers, even though their spectrum indicates they are restricted to single mode operation. Mode filtering alone is therefore not sufficient, and further measures will be needed for reduced BPP.

  3. High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup ¯}1{sup ¯}) GaN substrates

    SciTech Connect

    Pourhashemi, A. Farrell, R. M.; Cohen, D. A.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2015-03-16

    We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup ¯}1{sup ¯}) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451 nm at room temperature, an output power of 2.52 W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34 A. The measured differential quantum efficiency was 50%.

  4. Gain saturation and high-power pulsed operation of GaSb-based tapered diode lasers with separately contacted ridge and tapered section

    NASA Astrophysics Data System (ADS)

    Pfahler, C.; Eichhorn, M.; Kelemen, M. T.; Kaufel, G.; Mikulla, M.; Schmitz, J.; Wagner, J.

    2006-07-01

    (AlGaIn)(AsSb) ridge-waveguide tapered diode lasers with separately contacted ridge and tapered sections, emitting at 1.93μm, have been analyzed in pulsed mode with respect to their high-power capability and wavelength tunability. Operating the ridge section above saturation, a variation of the current through this section resulted in a change in lasing wavelength, while changing the current injected into the tapered section at a constant ridge current allowed to vary the output power at constant lasing wavelength. Furthermore, the optical power required to saturate the tapered amplifier section has been derived from a comparison of the experimental characteristics with beam propagation method calculations.

  5. High-power 390-nm laser source based on efficient frequency doubling of a tapered diode laser in an external resonant cavity.

    PubMed

    Bhawalkar, J D; Mao, Y; Po, H; Goyal, A K; Gavrilovic, P; Conturie, Y; Singh, S

    1999-06-15

    We frequency doubled the single-frequency beam from an external-cavity tapered laser diode operating at 780 nm in a resonant cavity containing a beta -barium borate crystal to generate an output at 390 nm with high efficiency. Output powers as great as 233 mW were obtained, corresponding to an efficiency of 65%/W . The resonant-cavity design was a low-loss three-mirror configuration that provided compensation for astigmatism and coma. The laser diode frequency was locked to the doubling-cavity resonance by use of the Hänsch-Couillaud discrimination technique. PMID:18073866

  6. High power gas laser amplifier

    DOEpatents

    Leland, Wallace T.; Stratton, Thomas F.

    1981-01-01

    A high power output CO.sub.2 gas laser amplifier having a number of sections, each comprising a plurality of annular pumping chambers spaced around the circumference of a vacuum chamber containing a cold cathode, gridded electron gun. The electron beam from the electron gun ionizes the gas lasing medium in the sections. An input laser beam is split into a plurality of annular beams, each passing through the sections comprising one pumping chamber.

  7. High-power diode laser at 980 nm for the treatment of benign prostatic hyperplasia: ex vivo investigations on porcine kidneys and human cadaver prostates.

    PubMed

    Seitz, Michael; Reich, Oliver; Gratzke, Christian; Schlenker, Boris; Karl, Alexander; Bader, Markus; Khoder, Wael; Fischer, Florian; Stief, Christian; Sroka, Ronald

    2009-03-01

    Diode laser systems at 980 nm have been introduced for the treatment of lower-urinary-tract-symptoms (LUTS) suggestive of benign prostatic enlargement (BPE). However, the coagulation and vaporization properties are unknown. We therefore aimed to evaluate these properties in ex vivo models in comparison with the kalium-titanyl-phosphate-(KTP) laser. The diode laser treatment was applied to isolated, blood-perfused porcine kidneys and fresh human cadaver prostates (HCPs) at different generator settings. We performed histological examination to compare the depth of coagulation and vaporization. The diode laser showed larger ablation and coagulation characteristics than the KTP laser did. Ablation of the diode laser was found to be 1.79-times (120 W in porcine kidney, P < 0.0001) and 3.0-5 times (200 W in HCP, P < 0.0005) larger. The diode laser created a nine-times (120 W in porcine kidney, P < 0.0001) and seven-times (200 W in HCP, P < 0.0001) deeper necrosis zone. The diode laser vaporization was highly effective ex vivo. Owing to the laser's deep coagulation zones, in vivo animal experiments are mandatory before the diode laser (980 nm) is applied in a clinical setting, so that damage to underlying structures is prevented. PMID:18270761

  8. A compact multi-wavelength optoacoustic system based on high-power diode lasers for characterization of double-walled carbon nanotubes (DWCNTs) for biomedical applications

    NASA Astrophysics Data System (ADS)

    Leggio, Luca; de Varona, Omar; Escudero, Pedro; Carpintero del Barrio, Guillermo; Osiński, Marek; Lamela Rivera, Horacio

    2015-06-01

    During the last decade, Optoacoustic Imaging (OAI), or Optoacoustic Tomography (OAT), has evolved as a novel imaging technique based on the generation of ultrasound waves with laser light. OAI may become a valid alternative to techniques currently used for the detection of diseases at their early stages. It has been shown that OAI combines the high contrast of optical imaging techniques with high spatial resolution of ultrasound systems in deep tissues. In this way, the use of nontoxic biodegradable contrast agents that mark the presence of diseases in near-infrared (NIR) wavelengths range (0.75-1.4 um) has been considered. The presence of carcinomas and harmful microorganisms can be revealed by means of the fluorescence effect exhibited by biopolymer nanoparticles. A different approach is to use carbon nanotubes (CNTs) which are a contrast agent in NIR range due to their absorption characteristics in the range between 800 to 1200 nm. We report a multi-wavelength (870 and 905 nm) laser diode-based optoacoustic (OA) system generating ultrasound signals from a double-walled carbon nanotubes (DWCNTs) solution arranged inside a tissue-like phantom, mimicking the scattering of a biological soft tissue. Optoacoustic signals obtained with DWCNTs inclusions within a tissue-like phantom are compared with the case of ink-filled inclusions, with the aim to assess their absorption. These measurements are done at both 870 and 905 nm, by using high power laser diodes as light sources. The results show that the absorption is relatively high when the inclusion is filled with ink and appreciable with DWCNTs.

  9. Efficient Nd:YAG laser end pumped by a high-power multistripe laser-diode bar with multiprism array coupling

    SciTech Connect

    Yamaguchi, S.; Kobayashi, T.; Saito, Y.; Chiba, K.

    1996-03-01

    A 10-W laser-diode bar, a multistripe monolithic laser-diode array, has been used to end pump Nd:YAG. Twelve beams emitted from 12 stripes, spaced 800 {mu}m apart, of a 1-cm linear diode array were collimated with a multiprism array consisting of 14 prismlets with 800-{mu}m width to pump the Nd:YAG facet. The maximum Nd:YAG cw output power at 1064 nm of 3 W was obtained at 10-W laser-diode-bar power with a slope efficiency of 35{percent}, and a TEM{sub 00} spatial mode with values of beam-quality factor {ital M}{sup 2} of 1.29 and 1.76 in the planes perpendicular and parallel to the junction, respectively. A pulse width of 25.2 ns (1-kHz repetition) was obtained in acousto-optic {ital Q}-switched operation. {copyright} {ital 1996 Optical Society of America.}

  10. High power excimer laser micromachining

    NASA Astrophysics Data System (ADS)

    Herbst, Ludolf; Paetzel, Rainer

    2006-02-01

    Today's excimer lasers are well-established UV laser sources for a wide variety of micromachining applications. The excimer's high pulse energy and average power at short UV wavelengths make them ideal for ablation of various materials, e. g., polyimide, PMMA, copper, and diamond. Excimer micromachining technology, driven by the ever-shrinking feature sizes of micro-mechanical and micro-electronic devices, is used for making semiconductor packaging microvias, ink jet nozzle arrays, and medical devices. High-power excimer laser systems are capable of processing large areas with resolution down to several microns without using wet chemical processes. For instance, drilling precise tapered holes and reel-to-reel manufacturing of disposable sensors have proven to be very cost-effective manufacturing techniques for volume production. Specifically, the new industrial excimer laser-the LAMBDA SX 315C-easily meets the high demands of cost-effective production. The stabilized output power of 315 watts at 300 Hz (308 nm) and its outstanding long-term stability make this laser ideal for high-duty-cycle, high-throughput micromachining. In this paper, high-power excimer laser technology, products, applications, and beam delivery systems will be discussed.

  11. High power disk lasers: advances and applications

    NASA Astrophysics Data System (ADS)

    Havrilla, David; Holzer, Marco

    2011-02-01

    Though the genesis of the disk laser concept dates to the early 90's, the disk laser continues to demonstrate the flexibility and the certain future of a breakthrough technology. On-going increases in power per disk, and improvements in beam quality and efficiency continue to validate the genius of the disk laser concept. As of today, the disk principle has not reached any fundamental limits regarding output power per disk or beam quality, and offers numerous advantages over other high power resonator concepts, especially over monolithic architectures. With well over 1000 high power disk lasers installations, the disk laser has proven to be a robust and reliable industrial tool. With advancements in running cost, investment cost and footprint, manufacturers continue to implement disk laser technology with more vigor than ever. This paper will explain important details of the TruDisk laser series and process relevant features of the system, like pump diode arrangement, resonator design and integrated beam guidance. In addition, advances in applications in the thick sheet area and very cost efficient high productivity applications like remote welding, remote cutting and cutting of thin sheets will be discussed.

  12. High-power high-efficiency acousto-optically Q-switched rod Nd:YAG laser with 885 nm diode laser pumping

    NASA Astrophysics Data System (ADS)

    Liu, K.; Li, F. Q.; Xu, H. Y.; Wang, Z. C.; Zong, N.; Du, S. F.; Bo, Y.; Peng, Q. J.; Cui, D. F.; Xu, Z. Y.

    2013-01-01

    We have demonstrated a compact Q-switched Nd:YAG laser at 1064 nm with 885 nm diode-laser (LD) direct pumping. At a repetition rate of 100 kHz, an average output power of 53 W with beam quality factor M2 of 1.6 was achieved under the absorbed pump power of 122 W, corresponding to an optical-optical efficiency of 43.5% and a slope efficiency of 57.6%, respectively. The pulse width and the peak power at this output power were 112 ns and 4.74 kW, respectively.

  13. Optics assembly for high power laser tools

    DOEpatents

    Fraze, Jason D.; Faircloth, Brian O.; Zediker, Mark S.

    2016-06-07

    There is provided a high power laser rotational optical assembly for use with, or in high power laser tools for performing high power laser operations. In particular, the optical assembly finds applications in performing high power laser operations on, and in, remote and difficult to access locations. The optical assembly has rotational seals and bearing configurations to avoid contamination of the laser beam path and optics.

  14. Assessing the influence of the vertical epitaxial layer design on the lateral beam quality of high-power broad area diode lasers

    NASA Astrophysics Data System (ADS)

    Winterfeldt, M.; Rieprich, J.; Knigge, S.; Maaßdorf, A.; Hempel, M.; Kernke, R.; Tomm, J. W.; Erbert, G.; Crump, P.

    2016-03-01

    GaAs-based high-power broad-area diode lasers deliver optical output powers Popt > 10W with efficiency > 60%. However, their application is limited due to poor in-plane beam parameter product BPPlat=0.25×Θ95%×w95% (Θ95% and w95% are emission angle and aperture, 95% power content). We present experimental investigations on λ = 9xx nm broad area lasers that aim to identify regulating factors of the BPPlat connected to the epitaxial layer design. First, we assess the thermal lens of vertical designs with varying asymmetry, using thermal camera images to determine its strength. Under study are an extreme-double-asymmetric (EDAS) vertical structure and a reference (i.e. more symmetric) design. The lateral thermal profiles clearly show that BPPlat increase is correlated to the bowing of the thermal lens. The latter is derived out of a quadratic temperature fit in the active region beneath the current injection of the laser device and depends on the details of the epitaxial layers. Second, we test the benefit of low modal gain factor Γg0, predicted to improve BPPlat via a suppression of filamentation. EDAS-based lasers with single quantum well (SQW) and double quantum well (DQW) active regions were compared, with 2.5x reduced Γg0, for 2.2x reduced filament gain. However, no difference is seen in measured BPPlat, giving evidence that filamentary processes are no longer a limit. In contrast, devices with lower Γg0 demonstrate an up to twofold reduced near field modulation depth, potentially enabling higher facet loads and increased device facet reliability, when operated near to the COD limit.

  15. Continuous improvement of high-efficiency high-power 800-980nm diode lasers at Spectra-Physics

    NASA Astrophysics Data System (ADS)

    Li, Hanxuan; Towe, Terry; Chyr, Irving; Jin, Xu; Miller, Robert; Romero, Oscar; Liu, Daming; Brown, Denny; Truchan, Tom; Nguyen, Touyen; Crum, Trevor; Wolak, Ed; Bullock, Robert; Mott, Jeff; Harrison, James

    2009-02-01

    New-generation multi-mode 9xx mini-bars used in fiber pump modules have been developed. The epitaxial designs have been improved for lower fast-axis and slow-axis divergence, higher slope efficiency and PCE by optimizing layer structures as well as minimizing internal loss. For 915nm mini-bars with 5-mm cavity length, maximum PCE is as high as ~61% for 35W operation and remains above 59% at 45W. For 808nm, a PCE of 56% at 135W CW operation has been demonstrated with 36%-fill-factor, 3-mm-cavity-length, water-cooled bars at 50°C coolant temperature. On passive-cooled standard CS heatsinks, PCE of >51% is measured for 100W operation at 50°C heatsink temperature. Leveraging these improvements has enabled low-cost bars for high-power, high-temperature applications.

  16. High power semiconductor laser beam combining technology and its applications

    NASA Astrophysics Data System (ADS)

    Wang, Lijun; Tong, Cunzhu; Peng, Hangyu; Zhang, Jun

    2013-05-01

    With the rapid development of laser applications, single elements of diode lasers are not able to meet the increasing requirements on power and beam quality in the material processing and defense filed, whether are used as pumping sources or directly laser sources. The coupling source with high power and high beam quality, multiplexed by many single elements, has been proven to be a promising technical solution. In this paper, the authors review the development tendency of efficiency, power, and lifetime of laser elements firstly, and then introduce the progress of laser beam combining technology. The authors also present their recent progress on the high power diode laser sources developed by beam combining technology, including the 2600W beam combining direct laser source, 1000W fiber coupled semiconductor lasers and the 1000W continuous wave (CW) semiconductor laser sources with beam quality of 12.5×14[mm. mrad]2.

  17. Improving the Reliability and Modal Stability of High Power 870 nm AlGaAs CSP Laser Diodes for Applications to Free Space Communication Systems

    NASA Technical Reports Server (NTRS)

    Connolly, J. C.; Alphonse, G. A.; Carlin, D. B.; Ettenberg, M.

    1991-01-01

    The operating characteristics (power-current, beam divergence, etc.) and reliability assessment of high-power CSP lasers is discussed. The emission wavelength of these lasers was optimized at 860 to 880 nm. The operational characteristics of a new laser, the inverse channel substrate planar (ICSP) laser, grown by metalorganic chemical vapor deposition (MOCVD), is discussed and the reliability assessment of this laser is reported. The highlights of this study include a reduction in the threshold current value for the laser to 15 mA and a degradation rate of less than 2 kW/hr for the lasers operating at 60 mW of peak output power.

  18. Catastrophic optical degradation of the output facet of high-power single-transverse-mode diode lasers. 2. Calculation of the spatial temperature distribution and threshold of the catastrophic optical degradation

    SciTech Connect

    Miftakhutdinov, D R; Bogatov, Alexandr P; Drakin, A E

    2010-09-10

    The temperature distribution and the power threshold during the catastrophic optical degradation are calculated within the framework of the developed model of the COD of the output facet in high-power single-transverse-mode diode lasers. Comparison of the calculation results and the experiment show the model adequacy. The contribution of different physical mechanisms into the heating of the laser output facet is analysed. It is shown that the model under study can help to develop the method for predicting the laser lifetime by the accelerated ageing tests. (lasers)

  19. Laser transmission welding of Acrylonitrile-Butadiene-Styrene (ABS) using a tailored high power diode-laser optical fiber coupled system

    NASA Astrophysics Data System (ADS)

    Rodríguez-Vidal, E.; Quintana, I.; Etxarri, J.; Otaduy, D.; González, F.; Moreno, F.

    2012-06-01

    Laser transmission welding (LTW) of polymers is a direct bonding technique which is already used in different industrial applications sectors such as automobile, microfluidic, electronic and biomedicine. This technique offers several advantages over conventional methods, especially when a local deposition of energy and minimum thermal distortions are required. In LTW one of the polymeric materials needs to be transparent to the laser wavelength and the second part needs to be designed to be absorbed in IR spectrum. This report presents a study of laser weldability of ABS (acrylonitrile/butadiene/styrene) filled with two different concentrations of carbon nanotubes (0.01% and 0.05% CNTs). These additives are used as infrared absorbing components in the laser welding process, affecting the thermal and optical properties of the material and, hence, the final quality of the weld seam. A tailored laser system has been designed to obtain high quality weld seams with widths between 0.4 and 1.0mm. It consists of two diode laser bars (50W per bar) coupled into an optical fiber using a non-imaging solution: equalization of the beam quality factor (M2) in the slow and fast axes by a pair of micro step-mirrors. The beam quality factor has been analyzed at different laser powers with the aim to guarantee a coupling efficiency to the multimode optical fiber. The power scaling is carried out by means of multiplexing polarization technique. The analysis of energy balance and beam quality is performed in two linked steps: first by means ray tracing simulations (ZEMAX®) and second, by validation. Quality of the weld seams is analyzed in terms of the process parameters (welding speed, laser power and clamping pressure) by visual and optical microscope inspections. The optimum laser power range for three different welding speeds is determinate meanwhile the clamping pressure is held constant. Additionally, the corresponding mechanical shear tests were carried out to analyze the

  20. Bidirectional pumped high power Raman fiber laser.

    PubMed

    Xiao, Q; Yan, P; Li, D; Sun, J; Wang, X; Huang, Y; Gong, M

    2016-03-21

    This paper presents a 3.89 kW 1123 nm Raman all-fiber laser with an overall optical-to-optical efficiency of 70.9%. The system consists of a single-wavelength (1070nm) seed and one-stage bidirectional 976 nm non-wavelength-stabilized laser diodes (LDs) pumped Yb-doped fiber amplifier. The unique part of this system is the application of non-wavelength-stabilized LDs in high power bidirectional pumping configuration fiber amplifier via refractive index valley fiber combiners. This approach not only increases the pump power, but also shortens the length of fiber by avoiding the usage of multi-stage amplifier. Through both theoretical research and experiment, the bidirectional pumping configuration presented in this paper proves to be able to convert 976 nm pump laser to 1070 nm laser via Yb3+ transfer, which is then converted into 1123 nm Raman laser via the first-order Raman effect without the appearance of any higher-order Raman laser. PMID:27136862

  1. Advanced Gunn diode as high power terahertz source for a millimetre wave high power multiplier

    NASA Astrophysics Data System (ADS)

    Amir, F.; Mitchell, C.; Farrington, N.; Missous, M.

    2009-09-01

    An advanced step-graded Gunn diode is reported, which has been developed through joint modelling-experimental work. The ~ 200 GHz fundamental frequency devices have been realized to test GaAs based Gunn oscillators at sub-millimetre wave for use as a high power (multi mW) Terahertz source in conjunction with a mm-wave multiplier, with novel Schottky diodes. The epitaxial growth of both the Gunn diode and Schottky diode wafers were performed using an industrial scale Molecular Beam Epitaxy (V100+) reactor. The Gunn diodes were then manufactured and packaged by e2v Technologies (UK) Plc. Physical models of the high power Gunn diode sources, presented here, are developed in SILVACO.

  2. High power laser perforating tools and systems

    DOEpatents

    Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O; Koblick, Yeshaya; Moxley, Joel F

    2014-04-22

    ystems devices and methods for the transmission of 1 kW or more of laser energy deep into the earth and for the suppression of associated nonlinear phenomena. Systems, devices and methods for the laser perforation of a borehole in the earth. These systems can deliver high power laser energy down a deep borehole, while maintaining the high power to perforate such boreholes.

  3. High-power 808 nm ridge-waveguide diode lasers with very small divergence, wavelength-stabilized by an external volume Bragg grating.

    PubMed

    Wenzel, H; Häusler, K; Blume, G; Fricke, J; Spreemann, M; Zorn, M; Erbert, G

    2009-06-01

    We present data on ridge-waveguide diode lasers having a vertical far-field divergence of only 11.5 degrees (FWHM) owing to an appropriate waveguide design. The lasers emitted an optical power of more than 1 W into the spatial fundamental mode from a ridge width of 5 microm. The emission wavelength was stabilized to a narrow range around 808 nm by placing a volume Bragg grating in front of the outcoupling facet. PMID:19488129

  4. Stable, high-power, single-frequency generation at 532 nm from a diode-bar-pumped Nd:YAG ring laser with an intracavity LBO frequency doubler.

    PubMed

    Martin, K I; Clarkson, W A; Hanna, D C

    1997-06-20

    We obtained 2.5 W of single-frequency TEM(00) output at 532 nm using a Brewster-angled LBO crystal for intracavity second-harmonic generation in a diode-bar-pumped Nd:YAG laser. By inserting a thin uncoated étalon, the 1061.4-nm laser transition can be selected, generating 1.6 W of output at 530.7 nm. PMID:18253441

  5. Ceramic tile grout removal & sealing using high power lasers

    SciTech Connect

    Lawrence, J.; Li, L.; Spencer, J.T.

    1996-12-31

    Work has been conducted using a Nd:YAG laser, a CO{sub 2} laser and a high power diode laser (HPDL) in order to determine the feasibility of removing contaminated tile grout from the void between adjoining vitrified ceramic tiles, and to seal the void permanently with a material having an impermeable surface glaze. Reported on in the paper are; the basic process phenomena, the process effectiveness, suitable vitrifiable material development, a heat affect study and a morphological and compositional analysis.

  6. Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser

    NASA Astrophysics Data System (ADS)

    Qing, Ke; Shaoyang, Tan; Songtao, Liu; Dan, Lu; Ruikang, Zhang; Wei, Wang; Chen, Ji

    2015-09-01

    A comprehensive design optimization of 1.55-μm high power InGaAsP/InP board area lasers is performed aiming at increasing the internal quantum efficiency (ηi) while maintaining the low internal loss (αi) of the device, thereby achieving high power operation. Four different waveguide structures of broad area lasers were fabricated and characterized in depth. Through theoretical analysis and experiment verifications, we show that laser structures with stepped waveguide and thin upper separate confinement layer will result in high ηi and overall slope efficiency. A continuous wave (CW) single side output power of 160 mW was obtained for an uncoated laser with a 50-μm active area width and 1 mm cavity length. Project supported by the National Natural Science Foundation of China (Nos. 61274046, 61201103) and the National High Technology Research and Development Program of China (No. 2013AA014202).

  7. High Power Diode Laser-Treated HP-HVOF and Twin Wire Arc-Sprayed Coatings for Fossil Fuel Power Plants

    NASA Astrophysics Data System (ADS)

    Mann, B. S.

    2013-08-01

    This article deals with high power diode laser (HPDL) surface modification of twin wire arc-sprayed (TWAS) and high pressure high velocity oxy-fuel (HP-HVOF) coatings to combat solid particle erosion occurring in fossil fuel power plants. To overcome solid particle impact wear above 673 K, Cr3C2-NiCr-, Cr3C2-CoNiCrAlY-, and WC-CrC-Ni-based HVOF coatings are used. WC-CoCr-based HVOF coatings are generally used below 673 K. Twin wire arc (TWA) spraying of Tafa 140 MXC and SHS 7170 cored wires is used for a wide range of applications for a temperature up to 1073 K. Laser surface modification of high chromium stainless steels for steam valve components and LPST blades is carried out regularly. TWA spraying using SHS 7170 cored wire, HP-HVOF coating using WC-CoCr powder, Ti6Al4V alloy, and high chromium stainless steels (X20Cr13, AISI 410, X10CrNiMoV1222, 13Cr4Ni, 17Cr4Ni) were selected in the present study. Using robotically controlled parameters, HPDL surface treatments of TWAS-coated high strength X10CrNiMoV1222 stainless steel and HP-HVOF-coated AISI 410 stainless steel samples were carried out and these were compared with HPDL-treated high chromium stainless steels and titanium alloy for high energy particle impact wear (HEPIW) resistance. The HPDL surface treatment of the coatings has improved the HEPIW resistance manifold. The improvement in HPDL-treated stainless steels and titanium alloys is marginal and it is not comparable with that of HPDL-treated coatings. These coatings were also compared with "as-sprayed" coatings for fracture toughness, microhardness, microstructure, and phase analyses. The HEPIW resistance has a strong relationship with the product of fracture toughness and microhardness of the HPDL-treated HP-HVOF and TWAS SHS 7170 coatings. This development opens up a possibility of using HPDL surface treatments in specialized areas where the problem of HEPIW is very severe. The HEPIW resistance of HPDL-treated high chromium stainless steels and

  8. Improvement and characterization of high-reflective and anti-reflective nanostructured mirrors by ion beam assisted deposition for 944 nm high power diode laser

    NASA Astrophysics Data System (ADS)

    Ghadimi-Mahani, A.; Farsad, E.; Goodarzi, A.; Tahamtan, S.; Abbasi, S. P.; Zabihi, M. S.

    2015-11-01

    Single-layer and multi-layer coatings were applied on the surface of diode laser facets as mirrors. This thin film mirrors were designed, deposited, optimized and characterized. The effects of mirrors on facet passivation and optical properties of InGaAs/AlGaAs/GaAs diode lasers were investigated. High-Reflective (HR) and Anti-Reflective (AR) mirrors comprising of four double-layers of Al2O3/Si and a single layer of Al2O3, respectively, were designed and optimized by Macleod software for 944 nm diode lasers. Optimization of Argon flow rate was studied through Alumina thin film deposition by Ion Beam Assisted Deposition (IBAD) for mirror improvement. The nanostructured HR and AR mirrors were deposited on the front and back facet of the laser respectively, by IBAD system under optimum condition. Atomic Force Microscope (AFM), Vis-IR Spectrophotometer, Field Emission Scanning Electron Microscopy (FESEM) and laser characterization Test (P-I) were used to characterize various properties of mirrors and lasers. AFM images show mirror's root mean square roughness is nearly 1 nm. The Spectrophotometer results of the front facet transmission and the back facet reflection are in good agreement with the simulation results. Optical output power (P) versus driving current (I) characteristics, measured before and after coating the facet, revealed a significant output power enhancement due to optimized AR and HR optical coatings on facets.

  9. Low-loss smile-insensitive external frequency-stabilization of high power diode lasers enabled by vertical designs with extremely low divergence angle and high efficiency

    NASA Astrophysics Data System (ADS)

    Crump, Paul; Knigge, Steffen; Maaßdorf, Andre; Bugge, Frank; Hengesbach, Stefan; Witte, Ulrich; Hoffmann, Hans-Dieter; Köhler, Bernd; Hubrich, Ralf; Kissel, Heiko; Biesenbach, Jens; Erbert, Götz; Traenkle, Guenther

    2013-02-01

    Broad area lasers with narrow spectra are required for many pumping applications and for wavelength beam combination. Although monolithically stabilized lasers show high performance, some applications can only be addressed with external frequency stabilization, for example when very narrow spectra are required. When conventional diode lasers with vertical far field angle, ΘV 95% ~ 45° (95% power) are stabilized using volume holographic gratings (VHGs), optical losses are introduced, limiting both efficiency and reliable output power, with the presence of any bar smile compounding the challenge. Diode lasers with designs optimized for extremely low vertical divergence (ELOD lasers) directly address these challenges. The vertical far field angle in conventional laser designs is limited by the waveguiding of the active region itself. In ELOD designs, quantum barriers are used that have low refractive index, enabling the influence of the active region to be suppressed, leading to narrow far field operation from thin vertical structures, for minimal electrical resistance and maximum power conversion efficiency. We review the design process, and show that 975 nm diode lasers with 90 μm stripes that use ELOD designs operate with ΘV 95% = 26° and reach 58% power conversion efficiency at a CW output power of 10 W. We demonstrate directly that VHG stabilized ELOD lasers have significantly lower loss and larger operation windows than conventional lasers in the collimated feedback regimes, even in the presence of significant (≥ 1 μm) bar smile. We also discuss the potential influence of ELOD designs on reliable output power and options for further performance improvement.

  10. A Preliminary In Vitro Study on the Efficacy of High-Power Photodynamic Therapy (HLLT): Comparison between Pulsed Diode Lasers and Superpulsed Diode Lasers and Impact of Hydrogen Peroxide with Controlled Stabilization

    PubMed Central

    Baldoni, Marco; Ghisalberti, Carlo Angelo; Paiusco, Alessio

    2016-01-01

    Aim. In periodontology lasers have been suggested for the photodynamic therapy (PDT): such therapy can be defined as the inactivation of cells, microorganisms, or molecules induced by light and not by heat. The aim of this study was to evaluate results of PDT using a 980 nm diode laser (Wiser Doctor Smile, Lambda SPA, Italy) combined with hydrogen peroxide, comparing a pulsed diode laser (LI) activity to a high-frequency superpulsed diode laser (LII). Materials and Methods. Primary fibroblasts and keratinocytes cell lines, isolated from human dermis, were irradiated every 48 h for 10 days using LI and LII combined with SiOxyL+™ Solution (hydrogen peroxide (HP) stabilized with a glycerol phosphate complex). Two days after the last irradiation, the treated cultures were analyzed by flow cytofluorometry (FACS) and western blotting to quantify keratin 5 and keratin 8 with monoclonal antibodies reactive to cytokeratin 5 and cytokeratin 8. Antimicrobial activity was also evaluated. Results. Both experimental models show the superiority of LII against LI. In parallel, stabilized HP provided better results in the regeneration test in respect to common HP, while the biocidal activity remains comparable. Conclusion. The use of high-frequency lasers combined with stabilized hydrogen peroxide can provide optimal results for a substantial decrease of bacterial count combined with a maximal biostimulation induction of soft tissues and osteogenesis.

  11. High power laser apparatus and system

    NASA Technical Reports Server (NTRS)

    Evans, J. C., Jr.; Brandhorst, H. W., Jr. (Inventor)

    1975-01-01

    A high-power, continuous-wave laser was designed for use in power transmission and energy-collecting systems, and for producing incoherent light for pumping a laser material. The laser has a high repetitive pulsing rate per unit time, resulting in a high-power density beam. The laser is composed of xenon flash tubes powered by fast-charging capacitors flashed in succession by a high-speed motor connected to an automobile-type distributor.

  12. Optical mode engineering and high power density per facet length (>8.4 kW/cm) in tilted wave laser diodes

    NASA Astrophysics Data System (ADS)

    Ledentsov, N. N.; Shchukin, V. A.; Maximov, M. V.; Gordeev, N. Y.; Kaluzhniy, N. A.; Mintairov, S. A.; Payusov, A. S.; Shernyakov, Yu. M.

    2016-03-01

    Tilted Wave Lasers (TWLs) based on optically coupled thin active waveguide and thick passive waveguide offer an ultimate solution for thick-waveguide diode laser, preventing catastrophic optical mirror damage and thermal smile in laser bars, providing robust operation in external cavity modules thus enabling wavelength division multiplexing and further increase in brightness enabling direct applications of laser diodes in the mainstream material processing. We show that by proper engineering of the waveguide one can realize high performance laser diodes at different tilt angles of the vertical lobes. Two vertical lobes directed at various angles (namely, +/-27° or +/-9°) to the junction plane are experimentally realized by adjusting the compositions and the thicknesses of the active and the passive waveguide sections. The vertical far field of a TWL with the two +/-9° vertical beams allows above 95% of all the power to be concentrated within a vertical angle below 25°, the fact which is important for laser stack applications using conventional optical coupling schemes. The full width at half maximum of each beam of the value of 1.7° evidences diffraction- limited operation. The broad area (50 μm) TWL chips at the cavity length of 1.5 mm reveal a high differential efficiency ~90% and a current-source limited pulsed power >42W for as-cleaved TWL device. Thus the power per facet length in a laser bar in excess of 8.4 kW/cm can be realized. Further, an ultimate solution for the smallest tilt angle is that where the two vertical lobes merge forming a single lobe directed at the zero angle is proposed.

  13. Electron beam current in high power cylindrical diode

    SciTech Connect

    Roy, Amitava; Menon, R.; Mitra, S.; Sharma, Vishnu; Singh, S. K.; Nagesh, K. V.; Chakravarthy, D. P.

    2010-01-15

    Intense electron beam generation studies were carried out in high power cylindrical diode to investigate the effect of the accelerating gap and diode voltage on the electron beam current. The diode voltage has been varied from 130 to 356 kV, whereas the current density has been varied from 87 to 391 A/cm{sup 2} with 100 ns pulse duration. The experimentally obtained electron beam current in the cylindrical diode has been compared with the Langmuir-Blodgett law. It was found that the diode current can be explained by a model of anode and cathode plasma expanding toward each other. However, the diode voltage and current do not follow the bipolar space-charge limited flow model. It was also found that initially only a part of the cathode take part in the emission process. The plasma expands at 4.2 cm/mus for 1.7 cm anode-cathode gap and the plasma velocity decreases for smaller gaps. The electrode plasma expansion velocity of the cylindrical diode is much smaller as compared with the planar diode for the same accelerating gap and diode voltage. Therefore, much higher voltage can be obtained for the cylindrical diodes as compared with the planar diodes for the same accelerating gap.

  14. Endoscopic cystoventriculostomy and ventriculocysternostomy using a recently developed 2.0-micron fiber-guided high-power diode-pumped solid state laser in children with hydrocephalus

    NASA Astrophysics Data System (ADS)

    Ludwig, Hans C.; Kruschat, Thomas; Knobloch, Torsten; Rostasy, Kevin; Buchfelder, Michael

    2005-04-01

    Preterm infants have a high incidence of post hemorrhagic or post infectious hydrocephalus often associated with ventricular or arachnoic cysts which carry a high risk of entrapment of cerebrospinal fluid (CSF). In these cases fenestration and opening of windows within the separating membranes are neurosurgical options. Although Nd:YAG- and diode-lasers have already been used in neuroendoscopic procedures, neurosurgeons avoid the use of high energy lasers in proximity to vital structures because of potential side effects. We have used a recently developed diode pumped solid state (DPSS) laser emitting light at a wavelength of 2.0 μm (Revolix TM LISA laser products, Katlenburg, Germany), which can be delivered through silica fibres towards endoscopic targets. From July 2002 until June 2004 fourteen endoscopic procedures in 12 consecutive patients (age 3 months to 12 years old) were performed. Most children suffered from complex post hemorrhagic and post infectious hydrocephalus, in whom ventriculoperitoneal shunt devices failed to restore a CSF equilibrium due to entrapment of CSF pathways by the cysts. We used two different endoscopes, a 6 mm Neuroendoscope (Braun Aesculap, Melsungen, Germany; a 4 mm miniature Neuroscope (Storz, Tuttlingen, Germany). The endoscopes were connected to a standard camera and TV monitor, the laser energy was introduced through a 365 μm core diameter bare ended silica fibre (PercuFib, LISA laser products, Katlenburg, Germany) through the endoscope"s working channel. The continuous wave laser was operated at power levels from 5 to 15 Watt in continuous and chopped mode. The frequency of the laser in chopped mode was varied between 5 and 20 Hz. All patients tolerated the procedure well. No immediate or long term side effects were noted. In 3 patients with cystic compression of the 4th ventricle, insertion of a shunt device could be avoided. The authors conclude that the use of the new RevolixTM laser enables safe and effective procedures

  15. Diode-end-pumped passively mode-locked high-power Nd:YVO4 laser with a relaxed saturable Bragg reflector.

    PubMed

    Chen, Y F; Tsai, S W; Lan, Y P; Wang, S C; Huang, K F

    2001-02-15

    We demonstrate a high-power passively mode-locked Nd:YVO (4) laser that uses a saturable Bragg reflector (SBR) with strain relaxation. 23.5 W of average power with ~21.5-ps cw mode-locked pulse trains was generated at a 50-W pump power. Experimental results show that appropriate strain relaxation in the SBR makes the mode-locking operation less sensitive to temperature variation. PMID:18033546

  16. High power eye-safe Er3+:YVO4 laser diode-pumped at 976 nm and emitting at 1603 nm

    NASA Astrophysics Data System (ADS)

    Newburgh, G. A.; Dubinskii, M.

    2016-02-01

    We report on the performance of an eye-safe laser based on a Er:YVO4 single crystal, diode-pumped at 976 nm (4I15/2-->4I11/2 transition) and operating at 1603 nm (4I13/2-->4I15/2 transition) with good beam quality. A 10 mm long Er3+:YVO4 slab, cut with its c-axis perpendicular to the laser cavity axis, was pumped in σ-polarization and lased in π-polarization. The laser operated in a quasi-continuous wave (Q-CW) regime with nearly 9 W output power, and with a slope efficiency of about 39% with respect to absorbed power. This is believed to be the highest efficiency and highest power achieved from an Er3+:YVO4 laser pumped in the 970-980 nm absorption band.

  17. Freeform beam shaping for high-power multimode lasers

    NASA Astrophysics Data System (ADS)

    Laskin, Alexander; Laskin, Vadim

    2014-03-01

    Widening of using high power multimode lasers in industrial laser material processing is accompanied by special requirements to irradiance profiles in such technologies like metal or plastics welding, cladding, hardening, brazing, annealing, laser pumping and amplification in MOPA lasers. Typical irradiance distribution of high power multimode lasers: free space solid state, fiber-coupled solid state and diodes lasers, fiber lasers, is similar to Gaussian. Laser technologies can be essentially improved when irradiance distribution on a workpiece is uniform (flattop) or inverse-Gauss; when building high-power pulsed lasers it is possible to enhance efficiency of pumping and amplification by applying super-Gauss irradiance distribution with controlled convexity. Therefore, "freeform" beam shaping of multimode laser beams is an important task. A proved solution is refractive field mapping beam shaper like Shaper capable to control resulting irradiance profile - with the same unit it is possible to get various beam profiles and choose optimum one for a particular application. Operational principle of these devices implies transformation of laser irradiance distribution by conserving beam consistency, high transmittance, providing collimated low divergent output beam. Using additional optics makes it possible to create resulting laser spots of necessary size and round, elliptical or linear shape. Operation out of focal plane and, hence, in field of lower wavefront curvature, allows extending depth of field. The refractive beam shapers are implemented as telescopes and collimating systems, which can be connected directly to fiber-coupled lasers or fiber lasers, thus combining functions of beam collimation and irradiance transformation.

  18. High power ultrashort pulse lasers

    SciTech Connect

    Perry, M.D.

    1994-10-07

    Small scale terawatt and soon even petawatt (1000 terawatt) class laser systems are made possible by application of the chirped-pulse amplification technique to solid-state lasers combined with the availability of broad bandwidth materials. These lasers make possible a new class of high gradient accelerators based on the large electric fields associated with intense laser-plasma interactions or from the intense laser field directly. Here, we concentrate on the laser technology to produce these intense pulses. Application of the smallest of these systems to the production of high brightness electron sources is also introduced.

  19. Assessment of high-power kW-class single-diode bars for use in highly efficient pulsed solid state laser systems

    NASA Astrophysics Data System (ADS)

    Lucianetti, Antonio; Pilar, Jan; Pranovich, Alina; Divoky, Martin; Mocek, Tomas; Ertel, K.; Jelinkova, Helena; Crump, P.; Frevert, C.; Staske, R.; Erbert, Götz; Traenkle, Günther

    2015-03-01

    In this work, we present measurements of efficiency-optimized 940 nm diode laser bars with long resonators that are constructed with robustly passivated output facets at the Ferdinand-Braun-Institut (FBH). The measurements were performed at room temperature on a test bench developed at HiLASE Centre, as a function of operating condition. The single-diode bars generated < 1.0 kW when tested with 1 ms pulses at 1-10Hz operating frequency, corresponding to < 1 J per pulse. The maximum electrical-to-optical efficiency was < 60 %, with operating efficiency at 1 kW of < 50%, limited by the ~ 200 μΩ resistance of the bar packaging. In addition, slow axis divergence at 1 kW was below 6° FWHM and spectral width at 1 kW was below 7 nm FWHM, as needed for pumping Yb-doped solid state amplifier crystals.

  20. Integration of high power lasers in bending tools

    NASA Astrophysics Data System (ADS)

    Bammer, F.; Holzinger, B.; Humenberger, G.; Schuöcker, D.; Schumi, T.

    The integration of high power lasers into bending tools creates a possibility to bend brittle materials with conventional presses. A diode laser, which is based on 200W-laser-bars and a solid state laser with 3 kW are used in this work. By heating the material within a narrow zone the ductility is increased and the forming process can be enabled. The assembly of the heat source within the bending tools is a prerequisite in order to feed energy into the workpiece before, during and after the forming process. As a result the heating and forming process can be optimized regarding any material.

  1. High-power fibre lasers

    NASA Astrophysics Data System (ADS)

    Jauregui, Cesar; Limpert, Jens; Tünnermann, Andreas

    2013-11-01

    Fibre lasers are now associated with high average powers and very high beam qualities. Both these characteristics are required by many industrial, defence and scientific applications, which explains why fibre lasers have become one of the most popular laser technologies. However, this success, which is largely founded on the outstanding characteristics of fibres as an active medium, has only been achieved through researchers around the world striving to overcome many of the limitations imposed by the fibre architecture. This Review focuses on these limitations, both past and current, and the creative solutions that have been proposed for overcoming them. These solutions have enabled fibre lasers to generate the highest diffraction-limited average power achieved to date by solid-state lasers.

  2. Laser Diode Ignition (LDI)

    NASA Technical Reports Server (NTRS)

    Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

    1994-01-01

    This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

  3. Diode end-pumped high-power Q-switched double Nd:YAG slab laser and its efficient near-field second-harmonic generation.

    PubMed

    Zhu, Peng; Li, Daijun; Qi, Bingsong; Schell, Alexander; Shi, Peng; Haas, Claus; Fu, Shaojun; Wu, Nianle; Du, Keming

    2008-10-01

    We reported on an all-solid-state double Nd:YAG slab laser. The laser was based on two diode end-pumped Nd:YAG slabs and a stable-unstable hybrid resonator. A cw output of 189 W and an average Q-switched output of 169 W at 10 kHz with an M(2) factor of 1.5 in the slow direction and 1.7 in the fast direction were obtained. We demonstrated efficient near-field frequency doubling by imaging the one-dimensional top-hat near-field to a lithium triborate frequency doubler. We obtained 93 W green light at 10 kHz with a pulse width of 10.7 ns. The efficiency of second-harmonic generation was up to 57%. PMID:18830367

  4. A High Power Frequency Doubled Fiber Laser

    NASA Technical Reports Server (NTRS)

    Thompson, Robert J.; Tu, Meirong; Aveline, Dave; Lundblad, Nathan; Maleki, Lute

    2003-01-01

    This viewgraph presentation reports on the development of a high power 780 nm laser suitable for space applications of laser cooling. A possible solution is to use frequency doubling of high power 1560 nm telecom lasers. The presentation shows a diagram of the frequency conversion, and a graph of the second harmonic generation in one crystal, and the use of the cascading crystals. Graphs show the second harmonic power as a function of distance between crystals, second harmonic power vs. pump power, tunability of laser systems.

  5. Laser diode protection circuit

    SciTech Connect

    Burgyan, L.; Hand, W.L.

    1990-05-08

    This patent describes a method for protecting a laser diode included within an electro-optical circuit. It comprises: the laser diode, a DC bias supply for supplying forward conduction current to the laser diode to cause it to emit light energy at a predetermined quiescent operating point, and an RF amplifier means for supplying an RF amplitude of an analog modulating signal to the laser diode for modulating the intensity of the emitted light energy about the quiescent operating point thereof, the method including providing a very high impedance to the laser diode during its nominal operating conditions about the quiescent point and, sensing an instantaneous amplitude of the RF amplitude modulating signal to detect amplitude surges therein, and responding to the sensing means by removing forward conduction current from the laser diode during the sense amplitude surges int he RF amplitude of the analog modulating signal, thereby causing the laser diode to reduce emission of light energy to a safe level.

  6. Integrated injection-locked semiconductor diode laser

    DOEpatents

    Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

    1991-02-19

    A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

  7. Integrated injection-locked semiconductor diode laser

    DOEpatents

    Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

    1991-01-01

    A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

  8. Characteristic optimization of 1.55-μm InGaAsP/InP high-power diode laser

    NASA Astrophysics Data System (ADS)

    Ke, Qing; Tan, Shaoyang; Zhai, Teng; Zhang, Ruikang; Lu, Dan; Ji, Chen

    2014-11-01

    A comprehensive design optimization of 1.55-μm high power InGaAsP/InP board area lasers is performed aiming at increasing the internal quantum efficiency (IQE) while maintaing a low internal loss of the device as well. The P-doping profile and separate confinement heterostructure (SCH) layer band gap are optimized respectively with commercial software Crosslight. Analysis of lasers with different p-doping profiles shows that, although heavy doping in P-cladding layer increases the internal loss of the device, it ensures a high IQE because higher energy barrier at the SCH/P-cladding interface as a result of heavy doping helps reduce the carrier leakage from the waveguide to the InP-cladding layer. The band gap of the SCH layer are also optimized for high slope efficiency. Smaller band gap helps reduce the vertical carrier leakage from the waveguide to the P-cladding layer, but the corresponding higher carrier concentration in SCH layer will cause some radiative recombination, thus influencing the IQE. And as the injection current increases, the carrier concentration increases faster with smaller band gap, therefore, the output power saturates sooner. An optimized band gap in SCH layer of approximately 1.127eV and heavy doping up to 1e18/cm3 at the SCH/P-cladding interface are identified for our high power laser design, and we achieved a high IQE of 94% and internal loss of 2.99/cm for our design.

  9. The high-power iodine laser

    NASA Astrophysics Data System (ADS)

    Brederlow, G.; Fill, E.; Witte, K. J.

    The book provides a description of the present state of the art concerning the iodine laser, giving particular attention to the design and operation of pulsed high-power iodine lasers. The basic features of the laser are examined, taking into account aspects of spontaneous emission lifetime, hyperfine structure, line broadening and line shifts, stimulated emission cross sections, the influence of magnetic fields, sublevel relaxation, the photodissociation of alkyl iodides, flashlamp technology, excitation in a direct discharge, chemical excitation, and questions regarding the chemical kinetics of the photodissociation iodine laser. The principles of high-power operation are considered along with aspects of beam quality and losses, the design and layout of an iodine laser system, the scalability and prospects of the iodine laser, and the design of the single-beam Asterix III laser.

  10. Single event burnout of high-power diodes

    NASA Astrophysics Data System (ADS)

    Maier, K. H.; Denker, A.; Voss, P.; Becker, H.-W.

    1998-12-01

    High-power diodes might be damaged by a single particle of cosmic radiation. This particle has first to produce a secondary nucleus, that ionizes more densely, through a nuclear reaction with the silicon of the diode. A multiplication of the number of charge carriers, primarily produced by this nucleus, can occur and eventually lead to a break down. The onset of this charge carrier multiplication is investigated with accelerated heavy ions under well controlled conditions. Clear trends are revealed, but the process is not yet understood.

  11. Generation of high-power laser light with Gigahertz splitting.

    PubMed

    Unks, B E; Proite, N A; Yavuz, D D

    2007-08-01

    We demonstrate the generation of two high-power laser beams whose frequencies are separated by the ground state hyperfine transition frequency in (87)Rb. The system uses a single master diode laser appropriately shifted by high frequency acousto-optic modulators and amplified by semiconductor tapered amplifiers. This produces two 1 W laser beams with a frequency spacing of 6.834 GHz and a relative frequency stability of 1 Hz. We discuss possible applications of this apparatus, including electromagnetically induced transparency-like effects and ultrafast qubit rotations. PMID:17764314

  12. High Power Free Electron Lasers

    SciTech Connect

    George Neil

    2004-04-12

    FEL Oscillators have been around since 1977 providing not only a test bed for the physics of Free Electron Lasers and electron/photon interactions but as a workhorse of scientific research. The characteristics that have driven the development of these sources are the desire for high peak and average power, high pulse energies, wavelength tunability, timing flexibility, and wavelengths that are unavailable from more conventional laser sources. User programs have been performed using such sources encompassing medicine, biology, solid state research, atomic and molecular physics, effects of non-linear fields, surface science, polymer science, pulsed laser vapor deposition, to name just a few. Recently the incorporation of energy recovery systems has permitted extension of the average power capabilities to the kW level and beyond. Development of substantially higher power systems with applications in defense and security is believed feasible with modest R&D efforts applied to a few technology areas. This paper will discuss at a summary level the physics of such devices, survey existing and planned facilities, and touch on the applications that have driven the development of these popular light sources.

  13. High power, diode pumped Er:YAG for dentistry

    NASA Astrophysics Data System (ADS)

    Hagen, C.; Heinrich, A.; Nussbaumer, B.

    2011-03-01

    Pantec Medical Laser presents a diode pumped Er:YAG laser for dental and hard tissue applications. The diode pumped laser is practically maintenance free and ensures reliable operation over several thousand hours. The high repetition rate with up to 15 W average output power, allows treatments otherwise not feasible with low repetition rate, lamp pumped Er:YAG systems. The variable pulse duration of 10 to 200 μs combined with the good beam quality ensures precise and fast treatment. First results on enamel ablation as well as the power scalability of the technology to 200 mJ and 30 W average power are also shown.

  14. Stark spectroscopy of a probe lithium beam excited with two dye lasers as a technique to study a high-power ion-beam diode.

    PubMed

    Knyazev, B A; An, W; Bluhm, H

    2012-03-01

    A non-disturbing measurement of electric field distributions is a subject of special interest in plasma physics and high-voltage devices. In this paper we describe a diagnostic technique for remote sensing of electric fields via injection of a probe beam of lithium atoms and cascade excitation of resonance fluorescence with two broadband dye lasers. The fluorescence spectrum was recorded using a monochromator equipped with an optical multi-channel analyser. The magnitude of the local electric field was retrieved from the Stark-shifted components of the 3d-2p lithium spectral line. The technique was applied to measurements of the electric field in the applied-B-field high-voltage diode of the 1 TW KALIF ion-beam accelerator. PMID:22462900

  15. High power regenerative laser amplifier

    DOEpatents

    Miller, J.L.; Hackel, L.A.; Dane, C.B.; Zapata, L.E.

    1994-02-08

    A regenerative amplifier design capable of operating at high energy per pulse, for instance, from 20-100 Joules, at moderate repetition rates, for instance from 5-20 Hertz is provided. The laser amplifier comprises a gain medium and source of pump energy coupled with the gain medium; a Pockels cell, which rotates an incident beam in response to application of a control signal; an optical relay system defining a first relay plane near the gain medium and a second relay plane near the rotator; and a plurality of reflectors configured to define an optical path through the gain medium, optical relay and Pockels cell, such that each transit of the optical path includes at least one pass through the gain medium and only one pass through the Pockels cell. An input coupler, and an output coupler are provided, implemented by a single polarizer. A control circuit coupled to the Pockels cell generates the control signal in timed relationship with the input pulse so that the input pulse is captured by the input coupler and proceeds through at least one transit of the optical path, and then the control signal is applied to cause rotation of the pulse to a polarization reflected by the polarizer, after which the captured pulse passes through the gain medium at least once more and is reflected out of the optical path by the polarizer before passing through the rotator again to provide an amplified pulse. 7 figures.

  16. High power regenerative laser amplifier

    DOEpatents

    Miller, John L.; Hackel, Lloyd A.; Dane, Clifford B.; Zapata, Luis E.

    1994-01-01

    A regenerative amplifier design capable of operating at high energy per pulse, for instance, from 20-100 Joules, at moderate repetition rates, for instance from 5-20 Hertz is provided. The laser amplifier comprises a gain medium and source of pump energy coupled with the gain medium; a Pockels cell, which rotates an incident beam in response to application of a control signal; an optical relay system defining a first relay plane near the gain medium and a second relay plane near the rotator; and a plurality of reflectors configured to define an optical path through the gain medium, optical relay and Pockels cell, such that each transit of the optical path includes at least one pass through the gain medium and only one pass through the Pockels cell. An input coupler, and an output coupler are provided, implemented by a single polarizer. A control circuit coupled to the Pockels cell generates the control signal in timed relationship with the input pulse so that the input pulse is captured by the input coupler and proceeds through at least one transit of the optical path, and then the control signal is applied to cause rotation of the pulse to a polarization reflected by the polarizer, after which the captured pulse passes through the gain medium at least once more and is reflected out of the optical path by the polarizer before passing through the rotator again to provide an amplified pulse.

  17. A High Power Amplifier for a Single Mode 1064 Laser

    NASA Astrophysics Data System (ADS)

    Stites, R. W.; O'Hara, K. M.

    2011-05-01

    We report on the construction of a high power amplifier system for a single mode 1064 nm laser. At the heart of this device is a 0.27% neodymium doped yttrium orthovanadate crystal that is double end pumped by two 30 Watt broadband diode arrays at 808 nm. For a 50 Watt TEM00 single freqency seed laser, we have observed an amplified power output in excess of 60 Watts for single pass configuration. A further increase in output power can be attained by retroreflecting the beam back through the crystal a second time. Such a device has direct application in the construction of optical lattices where high power single frequency lasers are required.

  18. Cryogenic cooling for high power laser amplifiers

    NASA Astrophysics Data System (ADS)

    Perin, J. P.; Millet, F.; Divoky, M.; Rus, B.

    2013-11-01

    Using DPSSL (Diode Pumped Solid State Lasers) as pumping technology, PW-class lasers with enhanced repetition rates are developed. Each of the Yb YAG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz). The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 100 K-170 K with a heat flux of 1 MW*m-2. This paper describes the thermo-mechanical analysis for the design of the amplification laser head, presents a preliminary proposal for the required cryogenic cooling system and finally outlines the gain of cryogenic operation for the efficiency of high pulsed laser.

  19. Early history of high-power lasers

    NASA Astrophysics Data System (ADS)

    Sutton, George W.

    2002-02-01

    This paper gives the history of the invention and development of early high power lasers, to which the author contributed and had personal knowledge. The earliest hint that a high power laser could be built came from the electric CO2-N2-He laser of Javan. It happened that the director of the Avco-Everett Research Laboratory had written his Ph.D. dissertation on the deactivation of the vibrational excitation of N2 in an expanding flow under Edward Teller, then at Columbia Univ. The director then started an in-house project to determine if gain could be achieved in a mixture similar to Javan's by means of a shock tunnel where a shock heated mixture of N2, CO2, and He gas was expanded through a supersonic nozzle into a cavity. This concept was named by the author as the gasdynamic laser (GDL). The paper traces the history of the initial gain measurements, the Mark II laser, the RASTA laser, the Tri-Service laser, its troubles and solutions, the United Technology's XLD gasdynamic laser, and their ALL laser. The history of the coastal Crusader will also be mentioned. Also discussed are the early experiments on a combustion-driven chemical laser, and its subsequent rejection by the director.

  20. An optically-triggered semiconductor switch for high power laser beams

    SciTech Connect

    Chow, Weng W.; Warren, M.E.

    1995-04-01

    The work involves research leading to an optically triggered switch for a high power laser pulse. The switch uses a semiconductor heterostructure whose optical properties are modified by a low power laser trigger such as a laser diode. Potential applications include optical control of pulsed power systems, control of medical lasers and implementation of security features in optical warhead architectures.

  1. High-power disk lasers: advances and applications

    NASA Astrophysics Data System (ADS)

    Havrilla, David; Ryba, Tracey; Holzer, Marco

    2012-03-01

    Though the genesis of the disk laser concept dates to the early 90's, the disk laser continues to demonstrate the flexibility and the certain future of a breakthrough technology. On-going increases in power per disk, and improvements in beam quality and efficiency continue to validate the genius of the disk laser concept. As of today, the disk principle has not reached any fundamental limits regarding output power per disk or beam quality, and offers numerous advantages over other high power resonator concepts, especially over monolithic architectures. With about 2,000 high power disk lasers installations, and a demand upwards of 1,000 lasers per year, the disk laser has proven to be a robust and reliable industrial tool. With advancements in running cost, investment cost and footprint, manufacturers continue to implement disk laser technology with more vigor than ever. This paper will explain recent advances in disk laser technology and process relevant features of the laser, like pump diode arrangement, resonator design and integrated beam guidance. In addition, advances in applications in the thick sheet area and very cost efficient high productivity applications like remote welding, remote cutting and cutting of thin sheets will be discussed.

  2. Nd:YAG laser side pumped by diode laser arrays

    NASA Astrophysics Data System (ADS)

    Tan, Hua; Huang, Weiling; Zhou, Zhouyou; Wang, Hailin; Cao, Hongbing; Wang, Ying

    1999-09-01

    The major limitation of flashlamp-pumped solid-state lasers is the low overall efficiency. Replacing flashlamps with high power laser diodes allows an increase of system efficiency by over an order of magnitude. Because of the thermally induced stress fracture of the laser materials, power-scaling possibilities of end-pumped configurations are limited. Therefore side pump geometry has to be used for high power laser. The theory and the design of high power diode side-pumped Nd:YAG laser system is described. The Nd:YAG rod is side-pumped by diode laser arrays with wavelength at 808 nm. We analyze the result of our experiments and make some conclusions about the design of side-pumped laser.

  3. Photoionization of optically trapped ultracold atoms with a high-power light-emitting diode

    SciTech Connect

    Goetz, Simone; Hoeltkemeier, Bastian; Amthor, Thomas; Weidemueller, Matthias

    2013-04-15

    Photoionization of laser-cooled atoms using short pulses of a high-power light-emitting diode (LED) is demonstrated. Light pulses as short as 30 ns have been realized with the simple LED driver circuit. We measure the ionization cross section of {sup 85}Rb atoms in the first excited state, and show how this technique can be used for calibrating efficiencies of ion detector assemblies.

  4. Performance and trends of high power light emitting diodes

    NASA Astrophysics Data System (ADS)

    Bierhuizen, Serge; Krames, Michael; Harbers, Gerard; Weijers, Gon

    2007-09-01

    We will discuss the performance, progress and trend of High Power Light Emitting Diodes (HP-LEDs), suitable for high luminance applications like micro-display projection, car headlamps, spot lamps, theatre lamps, etc. Key drivers for the high luminance applications are LED parameters such as internal quantum efficiency, extraction efficiency, drive current, operating temperature and optical coupling efficiency, which are important for most applications as they also enable higher lumen/$ ratios. Historical progress, prospects for improving these parameters and potential optical luminance enhancement methods to meet the demands for the various illumination applications are presented.

  5. Improved Thermoelectrically Cooled Laser-Diode Assemblies

    NASA Technical Reports Server (NTRS)

    Glesne, Thomas R.; Schwemmer, Geary K.; Famiglietti, Joe

    1994-01-01

    Cooling decreases wavelength and increases efficiency and lifetime. Two improved thermoelectrically cooled laser-diode assemblies incorporate commercial laser diodes providing combination of both high wavelength stability and broad wavelength tuning which are broadly tunable, highly stable devices for injection seeding of pulsed, high-power tunable alexandrite lasers used in lidar remote sensing of water vapor at wavelengths in vicinity of 727 nanometers. Provide temperature control needed to take advantage of tunability of commercial AlGaAs laser diodes in present injection-seeding application.

  6. Deformable mirror for high power laser applications

    NASA Astrophysics Data System (ADS)

    Mrň; a, Libor; Sarbort, Martin; Hola, Miroslava

    2015-01-01

    The modern trend in high power laser applications such as welding, cutting and surface hardening lies in the use of solid-state lasers. The output beam of these lasers is characterized by a Gaussian intensity distribution. However, the laser beams with different intensity distributions, e.g. top-hat, are preferable in various applications. In this paper we present a new type of deformable mirror suitable for the corresponding laser beam shaping. The deformation of the mirror is achieved by an underlying array of actuators and a pressurized coolant that also provides the necessary cooling. We describe the results of the surface shape measurement using a 3D scanner for different settings of actuators. Further, we show the achieved intensity distributions measured by a beam profiler for a low power laser beam reflected from the mirror.

  7. High Power Picosecond Laser Pulse Recirculation

    SciTech Connect

    Shverdin, M Y; Jovanovic, I; Semenov, V A; Betts, S M; Brown, C; Gibson, D J; Shuttlesworth, R M; Hartemann, F V; Siders, C W; Barty, C P

    2010-04-12

    We demonstrate a nonlinear crystal-based short pulse recirculation cavity for trapping the second harmonic of an incident high power laser pulse. This scheme aims to increase the efficiency and flux of Compton-scattering based light sources. We demonstrate up to 36x average power enhancement of frequency doubled sub-millijoule picosecond pulses, and 17x average power enhancement of 177 mJ, 10 ps, 10 Hz pulses.

  8. High speed micromachining with high power UV laser

    NASA Astrophysics Data System (ADS)

    Patel, Rajesh S.; Bovatsek, James M.

    2013-03-01

    Increasing demand for creating fine features with high accuracy in manufacturing of electronic mobile devices has fueled growth for lasers in manufacturing. High power, high repetition rate ultraviolet (UV) lasers provide an opportunity to implement a cost effective high quality, high throughput micromachining process in a 24/7 manufacturing environment. The energy available per pulse and the pulse repetition frequency (PRF) of diode pumped solid state (DPSS) nanosecond UV lasers have increased steadily over the years. Efficient use of the available energy from a laser is important to generate accurate fine features at a high speed with high quality. To achieve maximum material removal and minimal thermal damage for any laser micromachining application, use of the optimal process parameters including energy density or fluence (J/cm2), pulse width, and repetition rate is important. In this study we present a new high power, high PRF QuasarR 355-40 laser from Spectra-Physics with TimeShiftTM technology for unique software adjustable pulse width, pulse splitting, and pulse shaping capabilities. The benefits of these features for micromachining include improved throughput and quality. Specific example and results of silicon scribing are described to demonstrate the processing benefits of the Quasar's available power, PRF, and TimeShift technology.

  9. Diode laser (980nm) cartilage reshaping

    NASA Astrophysics Data System (ADS)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  10. High power Nd:YAG spinning disk laser.

    PubMed

    Ongstad, Andrew P; Guy, Matthew; Chavez, Joeseph R

    2016-01-11

    We report on a high power Nd:YAG spinning disk laser. The eight cm diameter disk generated 200 W CW output with 323 W of absorbed pump in a near diffraction-limited beam. The power conversion efficiency was 64%. The pulsed result, 5 ms pulses at 10 Hz PRF, was nearly identical to the CW result indicating good thermal management. Rotated at 1200-1800 RPM with He impingement cooling the disk temperature increased by only 17 °C reaching a maximum temperature of ~31 °C. The thermal dissipation per unit of output power was 0.61 watt of heat generated per watt of laser output, which is below the typical range of 0.8-1.1 for 808 nm diode pumped Nd:YAG lasers. PMID:26832242