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Sample records for high-power semiconductor lasers

  1. High power semiconductor laser beam combining technology and its applications

    NASA Astrophysics Data System (ADS)

    Wang, Lijun; Tong, Cunzhu; Peng, Hangyu; Zhang, Jun

    2013-05-01

    With the rapid development of laser applications, single elements of diode lasers are not able to meet the increasing requirements on power and beam quality in the material processing and defense filed, whether are used as pumping sources or directly laser sources. The coupling source with high power and high beam quality, multiplexed by many single elements, has been proven to be a promising technical solution. In this paper, the authors review the development tendency of efficiency, power, and lifetime of laser elements firstly, and then introduce the progress of laser beam combining technology. The authors also present their recent progress on the high power diode laser sources developed by beam combining technology, including the 2600W beam combining direct laser source, 1000W fiber coupled semiconductor lasers and the 1000W continuous wave (CW) semiconductor laser sources with beam quality of 12.5×14[mm. mrad]2.

  2. REVIEW High-power semiconductor separate-confinement double heterostructure lasers

    NASA Astrophysics Data System (ADS)

    Tarasov, I. S.

    2010-10-01

    The review is devoted to high-power semiconductor lasers. Historical reference is presented, physical and technological foundations are considered, and the concept of high-power semiconductor lasers is formulated. Fundamental and technological reasons limiting the optical power of a semiconductor laser are determined. The results of investigations of cw and pulsed high-power semiconductor lasers are presented. Main attention is paid to inspection of the results of experimental studies of single high-power semiconductor lasers. The review is mainly based on the data obtained in the laboratory of semiconductor luminescence and injection emitters at the A.F. Ioffe Physicotechnical Institute.

  3. High power semiconductor lasers for deep space communications

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1981-01-01

    The parameters of semiconductor lasers pertaining to their application as optical emitters are discussed. Several methods to overcome their basic disadvantage, which is the low level of powers they emit, are reviewed. Most of these methods are based on a coherent power combining of several lasers.

  4. An optically-triggered semiconductor switch for high power laser beams

    SciTech Connect

    Chow, Weng W.; Warren, M.E.

    1995-04-01

    The work involves research leading to an optically triggered switch for a high power laser pulse. The switch uses a semiconductor heterostructure whose optical properties are modified by a low power laser trigger such as a laser diode. Potential applications include optical control of pulsed power systems, control of medical lasers and implementation of security features in optical warhead architectures.

  5. High power semiconductor disk laser with a semiconductor-dielectric-metal compound mirror

    NASA Astrophysics Data System (ADS)

    Rantamäki, A.; Saarinen, E. J.; Lyytikäinen, J.; Lahtonen, K.; Valden, M.; Okhotnikov, O. G.

    2014-03-01

    We present optically pumped semiconductor disk lasers with a thin dielectric layer placed between the semiconductor distributed Bragg reflector and the metallization interface. The approach is shown to enhance the reflectivity of the semiconductor mirror while introducing a negligible penalty to the thermal resistance of the device. The design has potential for improving the performance of semiconductor disk lasers by avoiding highly pump-absorbing metal layers and allowing thinner mirror structures. The advantages are expected to be especially prominent for material systems that employ thick thermally insulating semiconductor mirrors.

  6. High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser.

    PubMed

    Kisel, V E; Rudenkov, A S; Pavlyuk, A A; Kovalyov, A A; Preobrazhenskii, V V; Putyato, M A; Rubtsova, N N; Semyagin, B R; Kuleshov, N V

    2015-06-15

    A high-power, diode-pumped, semiconductor saturable absorber mode-locked Yb(5%):KGW bulk laser was demonstrated with high optical-to-optical efficiency. Average output power as high as 8.8 W with optical-to-optical efficiency of 37.5% was obtained for Nm-polarized laser output with 162 fs pulse duration and 142 nJ pulse energy at a pulse repetition frequency of 62 MHz. For Np polarization, 143 fs pulses with pulse energy of 139 nJ and average output power of up to 8.6 W with optical-to-optical efficiency of 31% were generated. PMID:26076242

  7. High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power.

    PubMed

    Rudin, B; Wittwer, V J; Maas, D J H C; Hoffmann, M; Sieber, O D; Barbarin, Y; Golling, M; Südmeyer, T; Keller, U

    2010-12-20

    High-power ultrafast lasers are important for numerous industrial and scientific applications. Current multi-watt systems, however, are based on relatively complex laser concepts, for example using additional intracavity elements for pulse formation. Moving towards a higher level of integration would reduce complexity, packaging, and manufacturing cost, which are important requirements for mass production. Semiconductor lasers are well established for such applications, and optically-pumped vertical external cavity surface emitting lasers (VECSELs) are most promising for higher power applications, generating the highest power in fundamental transverse mode (>20 W) to date. Ultrashort pulses have been demonstrated using passive modelocking with a semiconductor saturable absorber mirror (SESAM), achieving for example 2.1-W average power, sub-100-fs pulse duration, and 50-GHz pulse repetition rate. Previously the integration of both the gain and absorber elements into a single wafer was demonstrated with the MIXSEL (modelocked integrated external-cavity surface emitting laser) but with limited average output power (<200 mW). We have demonstrated the power scaling concept of the MIXSEL using optimized quantum dot saturable absorbers in an antiresonant structure design combined with an improved thermal management by wafer removal and mounting of the 8-µm thick MIXSEL structure directly onto a CVD-diamond heat spreader. The simple straight cavity with only two components has generated 28-ps pulses at 2.5-GHz repetition rate and an average output power of 6.4 W, which is higher than for any other modelocked semiconductor laser. PMID:21197032

  8. Novel cavities and functionality in high-power highbrightness semiconductor vertical external cavity surface emitting lasers

    NASA Astrophysics Data System (ADS)

    Hessenius, Chris

    Ever since the first laser demonstration in 1960, applications for laser systems have increased to include diverse fields such as: national defense, biology and medicine, entertainment, imaging, and communications. In order to serve the growing demand, a wide range of laser types including solid-state, semiconductor, gas, and dye lasers have been developed. For most applications it is critical to have lasers with both high optical power and excellent beam quality. This has traditionally been difficult to simultaneously achieve in semiconductor lasers. In the mid 1990's, the advent of an optically pumped semiconductor vertical-external-cavity surface-emitting laser (VECSEL) led to the demonstration of high (multi-watt) output power with near diffraction limited (TEM00) beam quality. Since that time VECSELs covering large wavelength regions have been developed. It is the objective of this dissertation to investigate and explore novel cavity designs which can lead to increased functionality in high power, high brightness VECSELs. Optically pumped VECSELs have previously demonstrated their potential for high power, high brightness operation. In addition, the "open" cavity design of this type of laser makes intracavity nonlinear frequency conversion, linewidth narrowing, and spectral tuning very efficient. By altering the external cavity design it is possible to add additional functionality to this already flexible design. In this dissertation, the history, theory, design, and fabrication are first presented as VECSEL performance relies heavily on the design and fabrication of the chip. Basic cavities such as the linear cavity and v-shaped cavity will be discussed, including the role they play in wavelength tuning, transverse mode profile, and mode stability. The development of a VECSEL for use as a sodium guide star laser is presented including the theory and simulation of intracavity frequency generation in a modified v-cavity. The results show agreement with theory

  9. [Study on packaging-induced stress in 4 mm cavity length high-power single emitter semiconductor laser].

    PubMed

    Zhang, Yong; Yang, Rui-xia; An, Zhen-feng; Xu, Hui-wu

    2014-06-01

    To reduce packaging-induced stress of long cavity length high-power single emitter semiconductor laser, the relationship between the stress and the wavelength shift was deduced on the basis of the theory that the stress can change the band gap. A method was developed for quantitatively calculating the stress by measuring the emission spectrum of the laser under pulse conditions. The results show that the soldering quality is a critical factor affecting thermal stress. The difference in stress can exceed 300 MPa due to the difference in soldering quality. By optimizing the reflowing soldering curve of the laser, the stress of the laser drops from 129.7 to 53.4 MPa. This method can also effectively solve the problem that the stress varies with storage time. This work demonstrates that the measurement and analysis of the emission spectrum of the laser can provide a useful method to study packaging stress of the high-power single emitter semiconductor laser. It is also an available means to evaluate and analyze soldering quality. PMID:25358141

  10. High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm.

    PubMed

    Härkönen, Antti; Rautiainen, Jussi; Guina, Mircea; Konttinen, Janne; Tuomisto, Pietari; Orsila, Lasse; Pessa, Markus; Okhotnikov, Oleg G

    2007-03-19

    We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output. Combined power from two outputs was 320 mW. The wavelength of visible emission could be tuned by 4.5 nm using a thin glass etalon inside the cavity. PMID:19532562

  11. Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress

    NASA Astrophysics Data System (ADS)

    Yao, Nan; Li, Wei; Zhao, Yihao; Zhong, Li; Liu, Suping; Ma, Xiaoyu

    2015-10-01

    High power semiconductor laser is widely used because of its high transformation efficiency, good working stability, compact volume and simple driving requirements. Laser's lifetime is very long, but tests at high levels of stress can speed up the failure process and shorten the times to failure significantly. So accelerated life test is used here for forecasting the lifetime of 808nm CW GaAs/AlGaAs high power semiconductor laser that has an output power of 1W under 1.04A. Accelerated life test of constant current stress based on the Inverse Power Law Relationship was designed. Tests were conducted under 1.3A, 1.6A and 1.9A at room temperature. It is the first time that this method is used in the domestic research of laser's lifetime prediction. Applying Weibull Distribution to describe the lifetime distribution and analyzing the data of times to failure, characteristics lifetime's functional relationship model with current is achieved. Then the characteristics lifetime under normal current is extrapolated, which is 9473h. Besides, to confirm the validity of the functional relationship model, we conduct an additional accelerated life test under 1.75A. Based on this experimental data we calculated the characteristics lifetime corresponding to 1.75A that is 171h, while the extrapolated characteristics lifetime from the former functional relationship model is 162h. The two results shows 5% deviation that is very low and acceptable, which indicates that the test design is reasonable and authentic.

  12. High-order diffraction gratings for high-power semiconductor lasers

    SciTech Connect

    Vasil'eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; Leshko, A. Yu.; Petrunov, A. N.; Pikhtin, N. A.; Rastegaeva, M. G.; Sokolova, Z. N. Shashkin, I. S.; Tarasov, I. S.

    2012-02-15

    A deep diffraction grating with a large period ({approx}2 {mu}m) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating {approx}2 {mu}m deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al{sub 0.3}Ga{sub 0.7}As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.

  13. High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

    NASA Technical Reports Server (NTRS)

    Connolly, J. C.; Carlin, D. B.; Ettenberg, M.

    1989-01-01

    A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.

  14. Towards high power flip-chip long-wavelength semiconductor disk lasers

    NASA Astrophysics Data System (ADS)

    Rantamaki, A.; Saarinen, E.; Lyytikäinen, J.; Kontio, J.; Heikkinen, J.; Lahtonen, K.; Valden, M.; Okhotnikov, O.

    2015-03-01

    Optically pumped semiconductor disk lasers (SDLs) are presented with emphasis on wafer bonding InP-based active regions with GaAs-based distributed Bragg reflectors (DBRs) and reducing the number of required layer pairs in the DBR. The wafer bonding is performed at a relatively low temperature of 200 °C utilizing transparent intermediate bonding layers. The reflectivity of the semiconductor DBR section is enhanced by finishing the DBR with a thin low refractive index layer and a highly reflecting metal layer. Such a design enables considerably thinner mirror structures than the conventional design, where the semiconductor DBR is finished with mere metal layers. In addition, a 90 nm thick Al2O3 layer is shown to produce negligible increase in the thermal resistance of the SDL. Furthermore, a flip-chip SDL with a GaAs/AlAs-Al2O3-Al mirror is demonstrated with watt-level output power at the wavelength of 1.32 μm. The properties and future improvement issues for flip-chip SDLs emitting at 1.3-1.6 μm are also discussed.

  15. Far field and wavefront characterization of a high-power semiconductor laser for free space optical communications

    NASA Technical Reports Server (NTRS)

    Cornwell, Donald M., Jr.; Saif, Babak N.

    1991-01-01

    The spatial pointing angle and far field beamwidth of a high-power semiconductor laser are characterized as a function of CW power and also as a function of temperature. The time-averaged spatial pointing angle and spatial lobe width were measured under intensity-modulated conditions. The measured pointing deviations are determined to be well within the pointing requirements of the NASA Laser Communications Transceiver (LCT) program. A computer-controlled Mach-Zehnder phase-shifter interferometer is used to characterize the wavefront quality of the laser. The rms phase error over the entire pupil was measured as a function of CW output power. Time-averaged measurements of the wavefront quality are also made under intensity-modulated conditions. The measured rms phase errors are determined to be well within the wavefront quality requirements of the LCT program.

  16. High-power ({gt}0.9 W cw) diffraction-limited semiconductor laser based on a fiber Bragg grating external cavity

    SciTech Connect

    Cornwell, D.M. , Jr.; Thomas, H.J.

    1997-02-01

    We have developed a high-power ({gt}0.9 W cw) diffraction-limited semiconductor laser based on a tapered semiconductor optical amplifier using a fiber Bragg grating in an external cavity configuration. Frequency-selective feedback from the fiber grating is injected into the amplifier via direct butt coupling through a single mode fiber, resulting in a spectrally stable and narrow ({lt}0.3 nm) high-power laser for solid-state laser pumping, laser remote sensing, and optical communications. {copyright} {ital 1997 American Institute of Physics.}

  17. Compact, High Power, Multi-Spectral Mid-Infrared Semiconductor Laser Package

    NASA Astrophysics Data System (ADS)

    Guo, Bujin; Hwang, Wen-Yen; Lin, Chich-Hsiang

    2001-10-01

    Through a vertically integrated effort involving atomic level material engineering, advanced device processing development, state-of-the-art optomechanical packaging, and thermal management, Applied Optoelectronics, Inc. (AOI), University of Houston (U H), and Physical Science, Inc. (PSI) have made progress in both Sb-based type-II semiconductor material and in P-based type-I laser device development. We have achieved record performance on inP based quantum cascade continuous wave (CW) laser (with more than 5 mW CW power at 210 K). Grating-coupled external-cavity quantum cascade lasers were studied for temperatures from 20 to 230 K. A tuning range of 88 nm has been obtained at 80 K. The technology can be made commercially available and represents a significant milestone with regard to the Dual Use Science and Technology (DUST) intention of fostering dual use commercial technology for defense need. AOI is the first commercial company to ship products of this licensed technology.

  18. High-power multiple-frequency narrow-linewidth laser source based on a semiconductor tapered amplifier.

    PubMed

    Ferrari, G; Mewes, M O; Schreck, F; Salomon, C

    1999-02-01

    The output of two grating-stabilized external-cavity diode lasers was injected into a semiconductor tapered amplif ier in a master oscillator-power amplif ier (MOPA) configuration. At a wavelength of 671 nm this configuration produced 210 mW of power in a diffraction-limited mode with two frequency components of narrow linewidth. The frequency difference delta was varied from 20 MHz to 12 GHz, while the power ratio of the two components was freely adjustable. For delta < 2 GHz additional frequency sidebands appear in the output of the MOPA. This configuration is a f lexible and simple high-power cw laser source for light with multiple narrow-linewidth frequency components. PMID:18071437

  19. Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier.

    PubMed

    Chi, Mingjun; Jensen, Ole Bjarlin; Holm, Jesper; Pedersen, Christian; Andersen, Peter Eskil; Erbert, Götz; Sumpf, Bernd; Petersen, Paul Michael

    2005-12-26

    A high-power narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The external cavity laser system uses a new tapered amplifier with a super-large optical-cavity (SLOC) design that leads to improved performance of the external cavity diode lasers. The laser system is tunable over a 29 nm range centered at 802 nm. As high as 1.95 W output power is obtained at 803.84 nm, and an output power above 1.5 W is achieved from 793 to 812 nm at operating current of 3.0 A. The emission linewidth is below 0.004 nm and the beam quality factor M2 is below 1.3 over the 29 nm tunable range. As an example of application, the laser system is used as a pump source for the generation of 405 nm blue light by single-pass frequency doubling in a periodically poled KTiOPO4. An output power of 24 mW at 405 nm, corresponding to a conversion efficiency of 0.83%/W is attained. PMID:19503273

  20. Research on synchronization of 15 parallel high gain photoconductive semiconductor switches triggered by high power pulse laser diodes

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Xia, Liansheng; Chen, Yi; Liu, Yi; Yang, Chao; Ye, Mao; Deng, Jianjun

    2015-01-01

    The synchronization of 15 parallel high gain gallium arsenide photoconductive semiconductor switches (GaAs PCSS) has been researched aiming to get higher output voltage. Each PCSS is triggered independently by a high power pulse laser diode. The pulse width, energy, peak power, and central wavelength of the laser pulse are approximately 18 ns, 360 μJ, 20 kW, and 905 nm, respectively. In the stacked Blumlein transmission lines structure, the synchronous conduction of 15 parallel GaAs PCSSs has been achieved by offering optimized bias voltage and laser parameters. The method of synchronization calculation is given, and the synchronization of the 15 parallel GaAs PCSSs is measured as 775 ps. Furthermore, influences of the bias voltage, laser parameters on the synchronization are analyzed. In the output terminal, superimposed by the output voltages of 15 Blumlein transmission lines, the total output voltage reaches up to 328 kV, which is the highest output voltage of GaAs PCSSs that has been reported so far.

  1. Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm

    SciTech Connect

    Gorlachuk, P V; Ivanov, A V; Kurnosov, V D; Kurnosov, K V; Romantsevich, V I; Simakov, V A; Chernov, R V

    2014-02-28

    We report the simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm. A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier recombination rates are evaluated. Simulation results are shown to agree well with experimental data. (lasers)

  2. High power excimer laser micromachining

    NASA Astrophysics Data System (ADS)

    Herbst, Ludolf; Paetzel, Rainer

    2006-02-01

    Today's excimer lasers are well-established UV laser sources for a wide variety of micromachining applications. The excimer's high pulse energy and average power at short UV wavelengths make them ideal for ablation of various materials, e. g., polyimide, PMMA, copper, and diamond. Excimer micromachining technology, driven by the ever-shrinking feature sizes of micro-mechanical and micro-electronic devices, is used for making semiconductor packaging microvias, ink jet nozzle arrays, and medical devices. High-power excimer laser systems are capable of processing large areas with resolution down to several microns without using wet chemical processes. For instance, drilling precise tapered holes and reel-to-reel manufacturing of disposable sensors have proven to be very cost-effective manufacturing techniques for volume production. Specifically, the new industrial excimer laser-the LAMBDA SX 315C-easily meets the high demands of cost-effective production. The stabilized output power of 315 watts at 300 Hz (308 nm) and its outstanding long-term stability make this laser ideal for high-duty-cycle, high-throughput micromachining. In this paper, high-power excimer laser technology, products, applications, and beam delivery systems will be discussed.

  3. High-power ultralow-noise semiconductor external cavity lasers based on low-confinement optical waveguide gain media

    NASA Astrophysics Data System (ADS)

    Juodawlkis, Paul W.; Loh, William; O'Donnell, Frederick J.; Brattain, Michael A.; Plant, Jason J.

    2010-02-01

    For the past several years, we have been developing a new class of high-power, low-noise semiconductor optical gain medium based on the slab-coupled optical waveguide (SCOW) concept. The key characteristics of the SCOW design are (i) large (> 5 x 5 μm), symmetric, fundamental-transverse-mode operation attained through a combination of coupledmode filtering and low index-contrast, (ii) very low optical confinement factor (Γ ~ 0.3-0.5%), and (iii) low excessoptical loss (αi ~ 0.5 cm-1). The large transverse mode and low confinement factor enables SCOW lasers (SCOWLs) and amplifiers (SCOWAs) having Watt-class output power. The low confinement factor also dictates that the waveguide length be very large (0.5-1 cm) to achieve useful gain, which provides the benefits of small ohmic and thermal resistance. In this paper, we review the operating principles and performance of the SCOW gain medium, and detail its use in 1550-nm single-frequency SCOW external cavity lasers (SCOWECLs). The SCOWECL consists of a doublepass, curved-channel InGaAlAs quantum-well SCOWA and a narrowband (2.5 GHz) fiber Bragg grating (FBG) external cavity. We investigate the impact of the cavity Q on SCOWECL performance by varying the FBG reflectivity. We show that a bench-top SCOWECL having a FBG reflectivity of R = 10% (R = 20%) has a maximum output power of 450 mW (400 mW), linewidth of 52 kHz (28 kHz), and RIN at 2-MHz offset frequency of -155 dB/Hz (-165 dB/Hz).

  4. Doppler-free spectroscopy of mercury at 253.7 nm using a high-power, frequency-quadrupled, optically pumped external-cavity semiconductor laser.

    PubMed

    Paul, Justin; Kaneda, Yushi; Wang, Tsuei-Lian; Lytle, Christian; Moloney, Jerome V; Jones, R Jason

    2011-01-01

    We have developed a stable, high-power, single-frequency optically pumped external-cavity semiconductor laser system and generate up to 125 mW of power at 253.7 nm using successive frequency doubling stages. We demonstrate precision scanning and control of the laser frequency in the UV to be used for cooling and trapping of mercury atoms. With active frequency stabilization, a linewidth of <60 kHz is measured in the IR. Doppler-free spectroscopy and stabilization to the 6(1)S(0)-6(3)P(1) mercury transition at 253.7 nm is demonstrated. To our knowledge, this is the first demonstration of Doppler-free spectroscopy in the deep UV based on a frequency-quadrupled, high-power (>1 W) optically pumped semiconductor laser system. The results demonstrate the utility of these devices for precision spectroscopy at deep-UV wavelengths. PMID:21209687

  5. High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO₄ laser at 1342 nm with a semiconductor saturable absorber mirror.

    PubMed

    Li, Fang-Qin; Liu, Ke; Han, Lin; Zong, Nan; Bo, Yong; Zhang, Jing-Yuan; Peng, Qin-Jun; Cui, Da-Fu; Xu, Zu-Yan

    2011-04-15

    A high-power 880-nm diode-directly-pumped passively mode-locked 1342 nm Nd:YVO₄ laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The laser mode radii in the laser crystal and on the SESAM were optimized carefully using the ABCD matrix formalism. An average output power of 2.3 W was obtained with a repetition rate of 76 MHz and a pulse width of 29.2 ps under an absorbed pump power of 12.1 W, corresponding to an optical-optical efficiency of 19.0% and a slope efficiency of 23.9%, respectively. PMID:21499398

  6. High power solid state lasers

    SciTech Connect

    Weber, H.

    1988-01-01

    These proceedings discuss the following subjects: trends in materials processing with laser radiation; slabs and high power systems; glasses and new crystals; solid state lasers at HOYA Corp.; lamps, resonators and transmission; glasses as active materials for high average power solid state lasers; flashlamp pumped GGG-crystals; alexandrite lasers; designing telescope resonators; mode operation of neodymium: YAG lasers; intracavity frequency doubling with KTP crystal and thermal effects in cylinder lasers.

  7. Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser.

    PubMed

    Goldberg, L; Kliner, D A

    1995-05-15

    Tunable UV radiation near 215 nm was produced by frequency quadrupling the 860-nm emission of a mode-locked external-cavity compound semiconductor laser containing a tapered GaAlAs amplifier. A KNbO(3) crystal generated the 430-nm second harmonic, which was doubled by a beta-BaB(2)O(4) crystal, producing tunable UV radiation with as much as 15 microW of average power. PMID:19859453

  8. Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser

    SciTech Connect

    Goldberg, L.; Kliner, D.A.V.

    1995-05-15

    Tunable UV radiation near 215 nm was produced by frequency quadrupling the 860-nm emission of a mode-locked external-cavity compound semiconductor laser containing a tapered GaAlAs amplifier. A KNbO{sub 3} crystal generated the 430-nm second harmonic, which was doubled by a {beta}-BaB{sub 2}O{sub 4} crystal, producing tunable UV radiation with as much as 15 {mu}W of average power.

  9. High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band.

    PubMed

    Rantamäki, Antti; Sirbu, Alexei; Saarinen, Esa J; Lyytikäinen, Jari; Mereuta, Alexandru; Iakovlev, Vladimir; Kapon, Eli; Okhotnikov, Oleg G

    2014-08-15

    We present 6.1 W of output power from a flip-chip semiconductor disk laser (SDL) emitting in the 1.3 μm wavelength region. This is the first demonstration of a flip-chip SDL in this wavelength range with output powers that are comparable to those obtained with intracavity diamond heat spreaders. The flip-chip configuration circumvents the optical distortions and losses that the intracavity diamond heat spreaders can introduce into the laser cavity. This is essential for several key applications of SDLs. PMID:25121892

  10. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    SciTech Connect

    Podoskin, A. A. Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S.

    2015-08-15

    A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

  11. High-power pulsed lasers

    SciTech Connect

    Holzrichter, J.F.

    1980-04-02

    The ideas that led to the successful construction and operation of large multibeam fusion lasers at the Lawrence Livermore Laboratory are reviewed. These lasers are based on the use of Nd:glass laser materials. However, most of the concepts are applicable to any laser being designed for fusion experimentation. This report is a summary of lectures given by the author at the 20th Scottish University Summer School in Physics, on Laser Plasma Interaction. This report includes basic concepts of the laser plasma system, a discussion of lasers that are useful for short-pulse, high-power operation, laser design constraints, optical diagnostics, and system organization.

  12. Compact high-power low-jitter semiconductor mode-locked laser module for photonic A/D converter applications

    NASA Astrophysics Data System (ADS)

    Braun, Alan M.; Price, Bradford B.; Bechtle, Daniel W.; Kwakernaak, Martin H.; Abeles, Joseph H.; Yilmaz, Tolga; Delfyett, Peter J., Jr.

    2003-07-01

    Low-capacitance, two-section, curved-waveguide gain elements were packaged with lensed polarization-maintaining fiber within standard-sized butterfly-style packages and shown to produce low-jitter pulses when used within a harmonically modelocked sigma cavity laser (jitter = 25 fs; 10 Hz - 10 MHz). Incorporation of a high finesse etalon filter into the sigma-cavity loop resulted in greater than 25 dB suppression of the supermode spurs while maintaining low integrated phase noise (jitter = 30 fs; 10 Hz - 10 MHz). A module containing the in-line sigma-cavity modelocked laser source and packaged semiconductor optical amplifiers was developed to create a configurable low jitter pulse source.

  13. High Power Pulsed Gas Lasers

    NASA Astrophysics Data System (ADS)

    Witteman, W. J.

    1987-09-01

    Gas lasers have shown to be capable of delivering tens of terrawatt aspeak power or tens of kilowatt as average power. The efficiencies of most high power gas lasers are relatively high compared with other types of lasers. For instance molecular lasers, oscillating on low lying vibrational levels, and excimer lasers may have intrinsic efficiencies above 10%.The wavelengths of these gas lasers cover the range from the far infrared to the ultra-violet region, say from 12000 to 193 nm. The most important properties are the scalability, optical homogeneity of the excited medium, and the relatively low price per watt of output power. The disadvantages may be the large size of the systems and the relatively narrow line width with limited tunability compared with solid state systems producing the same peak power. High power gas lasers group into three main categories depending on the waste-heat handling capacity.

  14. High power gas laser amplifier

    DOEpatents

    Leland, Wallace T.; Stratton, Thomas F.

    1981-01-01

    A high power output CO.sub.2 gas laser amplifier having a number of sections, each comprising a plurality of annular pumping chambers spaced around the circumference of a vacuum chamber containing a cold cathode, gridded electron gun. The electron beam from the electron gun ionizes the gas lasing medium in the sections. An input laser beam is split into a plurality of annular beams, each passing through the sections comprising one pumping chamber.

  15. High power, high beam quality laser source with narrow, stable spectra based on truncated-tapered semiconductor amplifier

    NASA Astrophysics Data System (ADS)

    Wang, X.; Erbert, G.; Wenzel, H.; Crump, P.; Eppich, B.; Knigge, S.; Ressel, P.; Ginolas, A.; Maaßdorf, A.; Tränkle, G.

    2013-02-01

    High power diode lasers are increasingly important in many industrial applications. However, an ongoing challenge is to simultaneously obtain high output power, diffraction-limited beam quality and narrow spectral width. One approach to fulfill these requirements is to use a "master oscillator - power amplifier (MOPA)" system. We present recent data on MOPAs using PA designs that have low confinement factor (1%), leading to low modal gain, and low optical loss (<0.5cm-1). Quantum barriers with low refractive index are used to reduce the optical waveguiding due to the active region, which should decrease susceptibility to filament formation. A truncated tapered lateral design was used. Conventional tapered designs have a ridge waveguide (RW) at the entrance of the devices with etched cavity- spoiling grooves at the transition to the tapered gain region. Our amplifier used a truncated tapered design with no RW entrance section. We show that for this approach cavity-spoiling grooves are not necessary, and achieve improved performance when they are omitted, which we attribute to the filament insensitivity of our structure. High beam quality was achieved from a 970nm amplifier with M2 (1/e2) = 1.9, with efficiency of <48% in QCW condition, and <17W diffraction-limited beam maintained in the central lobe. The impact of the in-plane geometrical design was assessed and we show that large surface area is advantageous for device performance. The spectral properties of the amplifier replicated that of the DBRtapered laser, which is used as the master oscillator, with a spectral width of <30pm (FWHM). Design options for further increases in power are presented.

  16. Optics assembly for high power laser tools

    DOEpatents

    Fraze, Jason D.; Faircloth, Brian O.; Zediker, Mark S.

    2016-06-07

    There is provided a high power laser rotational optical assembly for use with, or in high power laser tools for performing high power laser operations. In particular, the optical assembly finds applications in performing high power laser operations on, and in, remote and difficult to access locations. The optical assembly has rotational seals and bearing configurations to avoid contamination of the laser beam path and optics.

  17. Effect of thermal management on the properties of saturable absorber mirrors in high-power mode-locked semiconductor disk lasers

    SciTech Connect

    Rantamaeki, Antti; Lyytikaeinen, Jari; Jari Nikkinen; Okhotnikov, Oleg G

    2011-09-30

    The thermal management of saturable absorbers is shown to have a critical impact on a high-power mode-locked disk laser. The absorber with efficient heat removal makes it possible to generate ultrashort pulses with high repetition rates and high power density.

  18. Tunable UV generation at 286 nm by frequency tripling of a high-power mode-locked semiconductor laser

    SciTech Connect

    Goldberg, L.; Kliner, D.A.V.

    1995-08-01

    We produced ultraviolet radiation by frequency tripling the mode-locked emission of an external cavity laser containing a tapered GaAlAs amplifier gain element. The 429-nm second harmonic produced by a KNbO{sub 3} crystal was sum-frequency mixed with the 858-nm fundamental in a Li{sub 3}BO{sub 5} crystal, generating as much as 50{mu}W of power at 286 nm. {copyright} {ital 1995} {ital Optical} {ital Society} {ital of} {ital America}.

  19. High power laser perforating tools and systems

    DOEpatents

    Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O; Koblick, Yeshaya; Moxley, Joel F

    2014-04-22

    ystems devices and methods for the transmission of 1 kW or more of laser energy deep into the earth and for the suppression of associated nonlinear phenomena. Systems, devices and methods for the laser perforation of a borehole in the earth. These systems can deliver high power laser energy down a deep borehole, while maintaining the high power to perforate such boreholes.

  20. Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser

    NASA Astrophysics Data System (ADS)

    Qing, Ke; Shaoyang, Tan; Songtao, Liu; Dan, Lu; Ruikang, Zhang; Wei, Wang; Chen, Ji

    2015-09-01

    A comprehensive design optimization of 1.55-μm high power InGaAsP/InP board area lasers is performed aiming at increasing the internal quantum efficiency (ηi) while maintaining the low internal loss (αi) of the device, thereby achieving high power operation. Four different waveguide structures of broad area lasers were fabricated and characterized in depth. Through theoretical analysis and experiment verifications, we show that laser structures with stepped waveguide and thin upper separate confinement layer will result in high ηi and overall slope efficiency. A continuous wave (CW) single side output power of 160 mW was obtained for an uncoated laser with a 50-μm active area width and 1 mm cavity length. Project supported by the National Natural Science Foundation of China (Nos. 61274046, 61201103) and the National High Technology Research and Development Program of China (No. 2013AA014202).

  1. High power laser apparatus and system

    NASA Technical Reports Server (NTRS)

    Evans, J. C., Jr.; Brandhorst, H. W., Jr. (Inventor)

    1975-01-01

    A high-power, continuous-wave laser was designed for use in power transmission and energy-collecting systems, and for producing incoherent light for pumping a laser material. The laser has a high repetitive pulsing rate per unit time, resulting in a high-power density beam. The laser is composed of xenon flash tubes powered by fast-charging capacitors flashed in succession by a high-speed motor connected to an automobile-type distributor.

  2. SPECIAL ISSUE DEVOTED TO THE 80TH ANNIVERSARY OF ACADEMICIAN N G BASOV'S BIRTH: High-power single-transverse-mode ridge optical waveguide semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Popovichev, V. V.; Davydova, Evgeniya I.; Marmalyuk, Aleksandr A.; Simakov, A. V.; Uspenskii, Mikhail B.; Chel'nyi, A. A.; Bogatov, Alexandr P.; Drakin, A. E.; Plisyuk, S. A.; Stratonnikov, Aleksei A.

    2002-12-01

    More than 200 mW of a single-transverse-mode cw output power is produced from a semiconductor heterolaser by optimising the waveguide properties of its ridge structure. The laser-beam divergence is close to the diffraction limit and its brightness exceeds 5 × 107 W cm-2 sr-1. The calculated and experimental parameters of the laser beam are coincident with a high accuracy, which allows their reliable simulation.

  3. High power ultrashort pulse lasers

    SciTech Connect

    Perry, M.D.

    1994-10-07

    Small scale terawatt and soon even petawatt (1000 terawatt) class laser systems are made possible by application of the chirped-pulse amplification technique to solid-state lasers combined with the availability of broad bandwidth materials. These lasers make possible a new class of high gradient accelerators based on the large electric fields associated with intense laser-plasma interactions or from the intense laser field directly. Here, we concentrate on the laser technology to produce these intense pulses. Application of the smallest of these systems to the production of high brightness electron sources is also introduced.

  4. High power laser diodes for the NASA direct detection laser transceiver experiment

    NASA Technical Reports Server (NTRS)

    Seery, Bernard D.; Holcomb, Terry L.

    1988-01-01

    High-power semiconductor laser diodes selected for use in the NASA space laser communications experiments are discussed. The diode selection rationale is reviewed, and the laser structure is shown. The theory and design of the third mirror lasers used in the experiments are addressed.

  5. Thermal Regime of High-power Laser Diodes

    NASA Astrophysics Data System (ADS)

    Bezotosnyi, V. V.; Krokhin, O. N.; Oleshchenko, V. A.; Pevtsov, V. F.; Popov, Yu. M.; Cheshev, E. A.

    We discuss the design and application perspectives of different crystal, ceramic and composite-type submounts with thermo-compensating properties as well as submounts from materials with high thermal conductivity for overcoming thermal problem in high-power laser diodes (LD) and improving thermal management of other high-power optoelectronic and electronic semiconductor devices. Thermal fields in high-power laser diodes were calculated in 3 D thermal model at CW operation for some heatsink designs taking into account the experimental dependence of laser total efficiency against pumping current in order to extend the range of reliable operation up to thermal loads 20-30 W and corresponding output optical power up to 15-20 W for 100 μm stripe laser diodes.

  6. High-power fibre lasers

    NASA Astrophysics Data System (ADS)

    Jauregui, Cesar; Limpert, Jens; Tünnermann, Andreas

    2013-11-01

    Fibre lasers are now associated with high average powers and very high beam qualities. Both these characteristics are required by many industrial, defence and scientific applications, which explains why fibre lasers have become one of the most popular laser technologies. However, this success, which is largely founded on the outstanding characteristics of fibres as an active medium, has only been achieved through researchers around the world striving to overcome many of the limitations imposed by the fibre architecture. This Review focuses on these limitations, both past and current, and the creative solutions that have been proposed for overcoming them. These solutions have enabled fibre lasers to generate the highest diffraction-limited average power achieved to date by solid-state lasers.

  7. A High Power Frequency Doubled Fiber Laser

    NASA Technical Reports Server (NTRS)

    Thompson, Robert J.; Tu, Meirong; Aveline, Dave; Lundblad, Nathan; Maleki, Lute

    2003-01-01

    This viewgraph presentation reports on the development of a high power 780 nm laser suitable for space applications of laser cooling. A possible solution is to use frequency doubling of high power 1560 nm telecom lasers. The presentation shows a diagram of the frequency conversion, and a graph of the second harmonic generation in one crystal, and the use of the cascading crystals. Graphs show the second harmonic power as a function of distance between crystals, second harmonic power vs. pump power, tunability of laser systems.

  8. The high-power iodine laser

    NASA Astrophysics Data System (ADS)

    Brederlow, G.; Fill, E.; Witte, K. J.

    The book provides a description of the present state of the art concerning the iodine laser, giving particular attention to the design and operation of pulsed high-power iodine lasers. The basic features of the laser are examined, taking into account aspects of spontaneous emission lifetime, hyperfine structure, line broadening and line shifts, stimulated emission cross sections, the influence of magnetic fields, sublevel relaxation, the photodissociation of alkyl iodides, flashlamp technology, excitation in a direct discharge, chemical excitation, and questions regarding the chemical kinetics of the photodissociation iodine laser. The principles of high-power operation are considered along with aspects of beam quality and losses, the design and layout of an iodine laser system, the scalability and prospects of the iodine laser, and the design of the single-beam Asterix III laser.

  9. High Power Free Electron Lasers

    SciTech Connect

    George Neil

    2004-04-12

    FEL Oscillators have been around since 1977 providing not only a test bed for the physics of Free Electron Lasers and electron/photon interactions but as a workhorse of scientific research. The characteristics that have driven the development of these sources are the desire for high peak and average power, high pulse energies, wavelength tunability, timing flexibility, and wavelengths that are unavailable from more conventional laser sources. User programs have been performed using such sources encompassing medicine, biology, solid state research, atomic and molecular physics, effects of non-linear fields, surface science, polymer science, pulsed laser vapor deposition, to name just a few. Recently the incorporation of energy recovery systems has permitted extension of the average power capabilities to the kW level and beyond. Development of substantially higher power systems with applications in defense and security is believed feasible with modest R&D efforts applied to a few technology areas. This paper will discuss at a summary level the physics of such devices, survey existing and planned facilities, and touch on the applications that have driven the development of these popular light sources.

  10. High power regenerative laser amplifier

    DOEpatents

    Miller, J.L.; Hackel, L.A.; Dane, C.B.; Zapata, L.E.

    1994-02-08

    A regenerative amplifier design capable of operating at high energy per pulse, for instance, from 20-100 Joules, at moderate repetition rates, for instance from 5-20 Hertz is provided. The laser amplifier comprises a gain medium and source of pump energy coupled with the gain medium; a Pockels cell, which rotates an incident beam in response to application of a control signal; an optical relay system defining a first relay plane near the gain medium and a second relay plane near the rotator; and a plurality of reflectors configured to define an optical path through the gain medium, optical relay and Pockels cell, such that each transit of the optical path includes at least one pass through the gain medium and only one pass through the Pockels cell. An input coupler, and an output coupler are provided, implemented by a single polarizer. A control circuit coupled to the Pockels cell generates the control signal in timed relationship with the input pulse so that the input pulse is captured by the input coupler and proceeds through at least one transit of the optical path, and then the control signal is applied to cause rotation of the pulse to a polarization reflected by the polarizer, after which the captured pulse passes through the gain medium at least once more and is reflected out of the optical path by the polarizer before passing through the rotator again to provide an amplified pulse. 7 figures.

  11. High power regenerative laser amplifier

    DOEpatents

    Miller, John L.; Hackel, Lloyd A.; Dane, Clifford B.; Zapata, Luis E.

    1994-01-01

    A regenerative amplifier design capable of operating at high energy per pulse, for instance, from 20-100 Joules, at moderate repetition rates, for instance from 5-20 Hertz is provided. The laser amplifier comprises a gain medium and source of pump energy coupled with the gain medium; a Pockels cell, which rotates an incident beam in response to application of a control signal; an optical relay system defining a first relay plane near the gain medium and a second relay plane near the rotator; and a plurality of reflectors configured to define an optical path through the gain medium, optical relay and Pockels cell, such that each transit of the optical path includes at least one pass through the gain medium and only one pass through the Pockels cell. An input coupler, and an output coupler are provided, implemented by a single polarizer. A control circuit coupled to the Pockels cell generates the control signal in timed relationship with the input pulse so that the input pulse is captured by the input coupler and proceeds through at least one transit of the optical path, and then the control signal is applied to cause rotation of the pulse to a polarization reflected by the polarizer, after which the captured pulse passes through the gain medium at least once more and is reflected out of the optical path by the polarizer before passing through the rotator again to provide an amplified pulse.

  12. Generation of high-power laser light with Gigahertz splitting.

    PubMed

    Unks, B E; Proite, N A; Yavuz, D D

    2007-08-01

    We demonstrate the generation of two high-power laser beams whose frequencies are separated by the ground state hyperfine transition frequency in (87)Rb. The system uses a single master diode laser appropriately shifted by high frequency acousto-optic modulators and amplified by semiconductor tapered amplifiers. This produces two 1 W laser beams with a frequency spacing of 6.834 GHz and a relative frequency stability of 1 Hz. We discuss possible applications of this apparatus, including electromagnetically induced transparency-like effects and ultrafast qubit rotations. PMID:17764314

  13. Early history of high-power lasers

    NASA Astrophysics Data System (ADS)

    Sutton, George W.

    2002-02-01

    This paper gives the history of the invention and development of early high power lasers, to which the author contributed and had personal knowledge. The earliest hint that a high power laser could be built came from the electric CO2-N2-He laser of Javan. It happened that the director of the Avco-Everett Research Laboratory had written his Ph.D. dissertation on the deactivation of the vibrational excitation of N2 in an expanding flow under Edward Teller, then at Columbia Univ. The director then started an in-house project to determine if gain could be achieved in a mixture similar to Javan's by means of a shock tunnel where a shock heated mixture of N2, CO2, and He gas was expanded through a supersonic nozzle into a cavity. This concept was named by the author as the gasdynamic laser (GDL). The paper traces the history of the initial gain measurements, the Mark II laser, the RASTA laser, the Tri-Service laser, its troubles and solutions, the United Technology's XLD gasdynamic laser, and their ALL laser. The history of the coastal Crusader will also be mentioned. Also discussed are the early experiments on a combustion-driven chemical laser, and its subsequent rejection by the director.

  14. High power diode pumped alkali vapor lasers

    NASA Astrophysics Data System (ADS)

    Zweiback, J.; Krupke, B.

    2008-05-01

    Diode pumped alkali lasers have developed rapidly since their first demonstration. These lasers offer a path to convert highly efficient, but relatively low brightness, laser diodes into a single high power, high brightness beam. General Atomics has been engaged in the development of DPALs with scalable architectures. We have examined different species and pump characteristics. We show that high absorption can be achieved even when the pump source bandwidth is several times the absorption bandwidth. In addition, we present experimental results for both potassium and rubidium systems pumped with a 0.2 nm bandwidth alexandrite laser. These data show slope efficiencies of 67% and 72% respectively.

  15. Deformable mirror for high power laser applications

    NASA Astrophysics Data System (ADS)

    Mrň; a, Libor; Sarbort, Martin; Hola, Miroslava

    2015-01-01

    The modern trend in high power laser applications such as welding, cutting and surface hardening lies in the use of solid-state lasers. The output beam of these lasers is characterized by a Gaussian intensity distribution. However, the laser beams with different intensity distributions, e.g. top-hat, are preferable in various applications. In this paper we present a new type of deformable mirror suitable for the corresponding laser beam shaping. The deformation of the mirror is achieved by an underlying array of actuators and a pressurized coolant that also provides the necessary cooling. We describe the results of the surface shape measurement using a 3D scanner for different settings of actuators. Further, we show the achieved intensity distributions measured by a beam profiler for a low power laser beam reflected from the mirror.

  16. The future of high power laser techniques

    NASA Astrophysics Data System (ADS)

    Poprawe, Reinhart; Loosen, Peter; Hoffmann, Hans-Dieter

    2007-05-01

    High Power Lasers have been used for years in corresponding applications. Constantly new areas and new processes have been demonstrated, developed and transferred to fruitful use in industry. With the advent of diode pumped solid state lasers in the multi-kW-power regime at beam qualities not far away from the diffraction limit, a new area of applicability has opened. In welding applications speeds could be increased and systems could be developed with higher efficiently leading also to new perspectives for increased productivity, e.g. in combined processing. Quality control is increasingly demanded by the applying industries, however applications still are rare. Higher resolution of coaxial process control systems in time and space combined with new strategies in signal processing could give rise to new applications. The general approach described in this paper emphasizes the fact, that laser applications can be developed more efficiently, more precisely and with higher quality, if the laser radiation is tailored properly to the corresponding application. In applying laser sources, the parameter ranges applicable are by far wider and more flexible compared to heat, mechanical or even electrical energy. The time frame ranges from several fs to continuous wave and this spans approximately 15 orders of magnitude. Spacewise, the foci range from several µm to cm and the resulting intensities suitable for materials processing span eight orders of magnitude from 10 3 to 10 11 W/cm2. In addition to space (power, intensity) and time (pulse) the wavelength can be chosen as a further parameter of optimization. As a consequence, the resulting new applications are vast and can be utilized in almost every market segment of our global economy (Fig. 1). In the past and only partly today, however, this flexibility of laser technology is not exploited in full in materials processing, basically because in the high power regime the lasers with tailored beam properties are not

  17. High power disk lasers: advances and applications

    NASA Astrophysics Data System (ADS)

    Havrilla, David; Holzer, Marco

    2011-02-01

    Though the genesis of the disk laser concept dates to the early 90's, the disk laser continues to demonstrate the flexibility and the certain future of a breakthrough technology. On-going increases in power per disk, and improvements in beam quality and efficiency continue to validate the genius of the disk laser concept. As of today, the disk principle has not reached any fundamental limits regarding output power per disk or beam quality, and offers numerous advantages over other high power resonator concepts, especially over monolithic architectures. With well over 1000 high power disk lasers installations, the disk laser has proven to be a robust and reliable industrial tool. With advancements in running cost, investment cost and footprint, manufacturers continue to implement disk laser technology with more vigor than ever. This paper will explain important details of the TruDisk laser series and process relevant features of the system, like pump diode arrangement, resonator design and integrated beam guidance. In addition, advances in applications in the thick sheet area and very cost efficient high productivity applications like remote welding, remote cutting and cutting of thin sheets will be discussed.

  18. High-power laser applications in Nippon Steel Corporation

    NASA Astrophysics Data System (ADS)

    Minamida, Katsuhiro

    2000-02-01

    The laser, which was invented in 1960, has been developed using various substances of solids, liquids, gases and semiconductors as laser active media. Applications of laser utilizing the coherent properties of laser light and the high power density light abound in many industries and in heavy industries respectively. The full-scale use of lasers in the steel industry began nearly 23 years ago with their applications as controllable light sources. Its contribution to the increase in efficiency and quality of the steel making process has been important and brought us the saving of the energy, the resource and the labor. Laser applications in the steel making process generally require high input energy, so it is essential to consider the interaction between the laser beam and the irradiated material. In particular, the reflectivity of the laser beam on the surface of material and the quantity of the laser-induced plasma are critical parameters for high efficient processes with low energy losses. We have developed plenty of new laser systems for the steel making process with their considerations in mind. A review of the following high-power-laser applications is given in the present paper: (1) Use of plasma as a secondary heat source in CO2 laser welding for connecting steel sheets of various grades. (2) Laser-assisted electric resistance welding of pipes. (3) New type all-laser-welded honeycomb panels for high-speed transport. (4) Laser flying welder for continuous hot rolling mill using two 45 kW CO2 lasers.

  19. Approximate Analysis of Semiconductor Laser Arrays

    NASA Technical Reports Server (NTRS)

    Marshall, William K.; Katz, Joseph

    1987-01-01

    Simplified equation yields useful information on gains and output patterns. Theoretical method based on approximate waveguide equation enables prediction of lateral modes of gain-guided planar array of parallel semiconductor lasers. Equation for entire array solved directly using piecewise approximation of index of refraction by simple functions without customary approximation based on coupled waveguid modes of individual lasers. Improved results yield better understanding of laser-array modes and help in development of well-behaved high-power semiconductor laser arrays.

  20. High Power Picosecond Laser Pulse Recirculation

    SciTech Connect

    Shverdin, M Y; Jovanovic, I; Semenov, V A; Betts, S M; Brown, C; Gibson, D J; Shuttlesworth, R M; Hartemann, F V; Siders, C W; Barty, C P

    2010-04-12

    We demonstrate a nonlinear crystal-based short pulse recirculation cavity for trapping the second harmonic of an incident high power laser pulse. This scheme aims to increase the efficiency and flux of Compton-scattering based light sources. We demonstrate up to 36x average power enhancement of frequency doubled sub-millijoule picosecond pulses, and 17x average power enhancement of 177 mJ, 10 ps, 10 Hz pulses.

  1. High power diode lasers: technology and application in Europe

    NASA Astrophysics Data System (ADS)

    Behringer, Martin; Eberhard, Franz; Herrmann, Gerhard; Luft, Johann; Maric, J.; Morgott, Stefan; Philippens, Marc; Teich, W.

    2003-03-01

    The application field of high power semiconductor lasers is growing rapidly and covers e.g. solid state laser pumping, metal and plastic welding, hard and soft soldering, suface treatment and others. Preferably those applications are attractive, which do not require extremely high beam quality. We have investigated high power diode-laser bars from 808 nm to 980 nm. The scope of this presentation is on focusability and beam quality. For better beam shaping structures with reduced fill factor of 25% to 30% were developed. They were operated in continuous wave operation at power levels of up to 55 W. Tests indicate extrapolated lifetimes of more than 100,000 hours at 40 W at 980 nm cw and about 10,000 hours at 45 W - 50 W at 940 nm and 808 nm. Monolithically stacked NonostacksR were investigated. Operation up to 100°C with excellent lifetimes could be demonstrated. New concepts and applications for low mode number high power diode lasers like tapered laser bars are presented. Examples for various current areas of interest in European research facilities will be given.

  2. Fabrication Processes for Surface-Emitting via External 45-DEGREE Reflectors, High-Power via Arrayed Ridge - Single-Mode Phase-Locked Aluminum Gallium Arsenide/gallium Arsenide Semiconductor Laser Sources.

    NASA Astrophysics Data System (ADS)

    Porkolab, Gyorgy Arpad

    The fabrication of monolithically integrated configurations of semiconductor lasers incorporating multiple functions is still an open issue today in engineering. A useful set of functions to integrate are: surface-emitting, high -power, phase-locked, single-mode, and collimated laser beam output. In this work new materials and advanced fabrication processes are developed for integrating the first four of the five functions listed. The interest in semiconductor lasers is due to their greater than 90% internal quantum efficiency in converting current-flux to photon-flux, their small size and weight, and their wavelength range from 400 to 1,550 nm. Multitudes of applications are possible for semiconductor laser sources ranging from the low-volume market of satellite-based communications systems to the high-volume market of image display screens. Semimetallic amorphous carbon (SMAC) thin film is introduced as an etch mask for chemically assisted ion beam etching (CAIBE) resulting in smooth etched facets in AlGaAs/GaAs at normal- and 45-degrees- incidence angles. A self-aligned etch technique is introduced using 4 separate photoresist selector-masks on top of a fixed SMAC master -mask on top of the AlGaAs/GaAs substrate to perform 4 separate CAIBE etches at 3 different angles and to 3 different depths to create self-aligned 3-dimensional microstructures of 1.3-μm deep ridge waveguides (RWG), 6-μm deep laser facets, and 11- μm long back-to-back 45-degree reflectors arranged in 3 by 100 arrays. Trenches on topside and underside of laser facets are introduced to deflect current away from laser facets. Silicon-rich nitro-oxide thin film is introduced as triple-use encapsulation to provide chemical passivation of AlGaAs/GaAs, optical anti-reflection coating by being refractive-index matched to AlGaAs/GaAs, and electrical insulation. A pincer-action sample-holder for CAIBE is introduced allowing samples to heat up by ion beam heating. Various surface preparations

  3. Bidirectional pumped high power Raman fiber laser.

    PubMed

    Xiao, Q; Yan, P; Li, D; Sun, J; Wang, X; Huang, Y; Gong, M

    2016-03-21

    This paper presents a 3.89 kW 1123 nm Raman all-fiber laser with an overall optical-to-optical efficiency of 70.9%. The system consists of a single-wavelength (1070nm) seed and one-stage bidirectional 976 nm non-wavelength-stabilized laser diodes (LDs) pumped Yb-doped fiber amplifier. The unique part of this system is the application of non-wavelength-stabilized LDs in high power bidirectional pumping configuration fiber amplifier via refractive index valley fiber combiners. This approach not only increases the pump power, but also shortens the length of fiber by avoiding the usage of multi-stage amplifier. Through both theoretical research and experiment, the bidirectional pumping configuration presented in this paper proves to be able to convert 976 nm pump laser to 1070 nm laser via Yb3+ transfer, which is then converted into 1123 nm Raman laser via the first-order Raman effect without the appearance of any higher-order Raman laser. PMID:27136862

  4. Semiconductor microcavity lasers

    SciTech Connect

    Gourley, P.L.; Wendt, J.R.; Vawter, G.A.; Warren, M.E.; Brennan, T.M.; Hammons, B.E.

    1994-02-01

    New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3-dimensional architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures which have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.

  5. Innovations in high power fiber laser applications

    NASA Astrophysics Data System (ADS)

    Beyer, Eckhard; Mahrle, Achim; Lütke, Matthias; Standfuss, Jens; Brückner, Frank

    2012-02-01

    Diffraction-limited high power lasers represent a new generation of lasers for materials processing, characteristic traits of which are: smaller, cost-effective and processing "on the fly". Of utmost importance is the high beam quality of fiber lasers which enables us to reduce the size of the focusing head incl. scanning mirrors. The excellent beam quality of the fiber laser offers a lot of new applications. In the field of remote cutting and welding the beam quality is the key parameter. By reducing the size of the focusing head including the scanning mirrors we can reach scanning frequencies up to 1.5 kHz and in special configurations up to 4 kHz. By using these frequencies very thin and deep welding seams can be generated experienced so far with electron beam welding only. The excellent beam quality of the fiber laser offers a high potential for developing new applications from deep penetration welding to high speed cutting. Highly dynamic cutting systems with maximum speeds up to 300 m/min and accelerations up to 4 g reduce the cutting time for cutting complex 2D parts. However, due to the inertia of such systems the effective cutting speed is reduced in real applications. This is especially true if complex shapes or contours are cut. With the introduction of scanner-based remote cutting systems in the kilowatt range, the effective cutting speed on the contour can be dramatically increased. The presentation explains remote cutting of metal foils and sheets using high brightness single mode fiber lasers. The presentation will also show the effect of optical feedback during cutting and welding with the fiber laser, how those feedbacks could be reduced and how they have to be used to optimize the cutting or welding process.

  6. Apparatus for advancing a wellbore using high power laser energy

    DOEpatents

    Zediker, Mark S.; Land, Mark S.; Rinzler, Charles C.; Faircloth, Brian O.; Koblick, Yeshaya; Moxley, Joel F.

    2014-09-02

    Delivering high power laser energy to form a borehole deep into the earth using laser energy. Down hole laser tools, laser systems and laser delivery techniques for advancement, workover and completion activities. A laser bottom hole assembly (LBHA) for the delivery of high power laser energy to the surfaces of a borehole, which assembly may have laser optics, a fluid path for debris removal and a mechanical means to remove earth.

  7. Vibration characteristic of high power CO2 laser

    NASA Astrophysics Data System (ADS)

    Zhang, Kuo

    2015-02-01

    High power CO2 laser is widely used in various scientific, industrial and military applications. Vibration is a common phenomenon during laser working process, it will affect the working performance of high power CO2 laser, vibration must be strictly controlled in the condition where the laser pointing is required. This paper proposed a method to investigate the vibration characteristic of high power CO2 laser. An experiment device with vibration acceleration sensor was established to measure vibration signal of CO2 laser, the measured vibration signal was mathematically treated using space-frequency conversion, and then the vibration characteristic of high power CO2 laser can be obtained.

  8. Two photon absorption in high power broad area laser diodes

    NASA Astrophysics Data System (ADS)

    Dogan, Mehmet; Michael, Christopher P.; Zheng, Yan; Zhu, Lin; Jacob, Jonah H.

    2014-03-01

    Recent advances in thermal management and improvements in fabrication and facet passivation enabled extracting unprecedented optical powers from laser diodes (LDs). However, even in the absence of thermal roll-over or catastrophic optical damage (COD), the maximum achievable power is limited by optical non-linear effects. Due to its non-linear nature, two-photon absorption (TPA) becomes one of the dominant factors that limit efficient extraction of laser power from LDs. In this paper, theoretical and experimental analysis of TPA in high-power broad area laser diodes (BALD) is presented. A phenomenological optical extraction model that incorporates TPA explains the reduction in optical extraction efficiency at high intensities in BALD bars with 100μm-wide emitters. The model includes two contributions associated with TPA: the straightforward absorption of laser photons and the subsequent single photon absorption by the holes and electrons generated by the TPA process. TPA is a fundamental limitation since it is inherent to the LD semiconductor material. Therefore scaling the LDs to high power requires designs that reduce the optical intensity by increasing the mode size.

  9. Tapered fiber based high power random laser.

    PubMed

    Zhang, Hanwei; Du, Xueyuan; Zhou, Pu; Wang, Xiaolin; Xu, Xiaojun

    2016-04-18

    We propose a novel high power random fiber laser (RFL) based on tapered fiber. It can overcome the power scaling limitation of RFL while maintaining good beam quality to a certain extent. An output power of 26.5 W has been achieved in a half-open cavity with one kilometer long tapered fiber whose core diameter gradually changes from 8 μm to 20 μm. The steady-state light propagation equations have been modified by taking into account the effective core area to demonstrate the tapered RFL through numerical calculations. The numerical model effectively describes the power characteristics of the tapered fiber based RFL, and both the calculating and experimental results show higher power exporting potential compared with the conventional single mode RFL. PMID:27137338

  10. High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems

    NASA Astrophysics Data System (ADS)

    Slipchenko, Sergey; Podoskin, Aleksandr; Soboleva, Olga; Zakharov, Maxim S.; Bakhvalov, Kirill; Romanovich, Dmitrii; Pikhtin, Nikita; Tarasov, Il`ya; Bagaev, Timur; Ladugin, Maxim; Marmalyuk, Aleksandr; Simakov, Vladimir

    2016-03-01

    We present a new approach based on the integration of the functions of a high-efficiency current switch and a laser emitter into a single heterostructure as elements of time-of-flight (TOF) systems. The approach being developed employs the effect of an electrical bistability, which occurs in the general case in thyristor structures. We report recent results obtained in a study of the dynamic electrical and optical characteristics of the pulsed sources we developed. An effective generation of 2- to 100-ns laser pulses at a wavelength of 905 nm is demonstrated. The possibility of generating laser pulses shorter than 1 ns is considered. The maximum peak power reached values of 7 and 50 W for 10- and 100-ns pulses, respectively.

  11. High power gas laser - Applications and future developments

    NASA Technical Reports Server (NTRS)

    Hertzberg, A.

    1977-01-01

    Fast flow can be used to create the population inversion required for lasing action, or can be used to improve laser operation, for example by the removal of waste heat. It is pointed out that at the present time all lasers which are capable of continuous high-average power employ flow as an indispensable aspect of operation. High power laser systems are discussed, taking into account the gasdynamic laser, the HF supersonic diffusion laser, and electric discharge lasers. Aerodynamics and high power lasers are considered, giving attention to flow effects in high-power gas lasers, aerodynamic windows and beam manipulation, and the Venus machine. Applications of high-power laser technology reported are related to laser material working, the employment of the laser in controlled fusion machines, laser isotope separation and photochemistry, and laser power transmission.

  12. Passively cooled diode laser for high-power applications

    NASA Astrophysics Data System (ADS)

    Bonati, Guido F.; Hennig, Petra; Schmidt, Karsten

    2004-06-01

    For the usage of diode lasers in industrial applications, customers ask today for expected lifetimes of more then 30.000 hours. To match the request for low costs per Watt as well, the output power has to be as high as possible. To achieve a maximum power out of a diode laser bar, heat removal must be extremely efficient. Today, micro channel heatsinks (MCHS) are the only way to achieve the high power level of 50W. But due to erosion/corrosion effects the lifetime of MCHS is limited at 15000...20.000 hours today. Finally we have to determine that for selected semiconductor materials not the semiconductor but the heatsink is limiting the expected lifetime of high power diode lasers today. Passive heat sinks based on solid copper are not limiting lifetime expectations in any way. But as cooling efficiency is lower, the power has to be reduced to a level of 30...40W. The first time ever, the JENOPTIK Laserdiode can present today a cooling technique that combines the passive cooling of a diode laser bar with the optical output a power of a bar, mounted on a MCHS. Using a special heat exchanger called DCB (patent pending) we were able to increase the power to 50W per bar while looking forward to extend the expected lifetime to more than 30.000 hours for selected materials. Restrictions on the quality of the water by means of deionization grade or PH- level are no longer necessary. The device is operating with regular water. The flow rate is as low as on MCHS, the pressure drop over the DCB is comparable. Additionally, the measurements will show an even lower thermal resistance compared to MCHS. The second generationof engineering samples is built up for pumping rows. A vertical stack design will be available for evaluating purposes soon. All these efforts are part of the JENOPTIK Laserdiode's LongLifeTechnology.

  13. Tunable semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

    2006-01-01

    Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

  14. Flow lasers. [fluid mechanics of high power continuous output operations

    NASA Technical Reports Server (NTRS)

    Christiansen, W. H.; Russell, D. A.; Hertzberg, A.

    1975-01-01

    The present work reviews the fluid-mechanical aspects of high-power continuous-wave (CW) lasers. The flow characteristics of these devices appear as classical fluid-mechanical phenomena recast in a complicated interactive environment. The fundamentals of high-power lasers are reviewed, followed by a discussion of the N2-CO2 gas dynamic laser. Next, the HF/DF supersonic diffusion laser is described, and finally the CO electrical-discharge laser is discussed.

  15. High power diode lasers for solid-state laser pumps

    NASA Technical Reports Server (NTRS)

    Linden, Kurt J.; Mcdonnell, Patrick N.

    1994-01-01

    The development and commercial application of high power diode laser arrays for use as solid-state laser pumps is described. Such solid-state laser pumps are significantly more efficient and reliable than conventional flash-lamps. This paper describes the design and fabrication of diode lasers emitting in the 780 - 900 nm spectral region, and discusses their performance and reliability. Typical measured performance parameters include electrical-to-optical power conversion efficiencies of 50 percent, narrow-band spectral emission of 2 to 3 nm FWHM, pulsed output power levels of 50 watts/bar with reliability values of over 2 billion shots to date (tests to be terminated after 10 billion shots), and reliable operation to pulse lengths of 1 ms. Pulse lengths up to 5 ms have been demonstrated at derated power levels, and CW performance at various power levels has been evaluated in a 'bar-in-groove' laser package. These high-power 1-cm stacked-bar arrays are now being manufactured for OEM use. Individual diode laser bars, ready for package-mounting by OEM customers, are being sold as commodity items. Commercial and medical applications of these laser arrays include solid-state laser pumping for metal-working, cutting, industrial measurement and control, ranging, wind-shear/atmospheric turbulence detection, X-ray generation, materials surface cleaning, microsurgery, ophthalmology, dermatology, and dental procedures.

  16. High power diode lasers for solid-state laser pumps

    NASA Astrophysics Data System (ADS)

    Linden, Kurt J.; McDonnell, Patrick N.

    1994-02-01

    The development and commercial application of high power diode laser arrays for use as solid-state laser pumps is described. Such solid-state laser pumps are significantly more efficient and reliable than conventional flash-lamps. This paper describes the design and fabrication of diode lasers emitting in the 780 - 900 nm spectral region, and discusses their performance and reliability. Typical measured performance parameters include electrical-to-optical power conversion efficiencies of 50 percent, narrow-band spectral emission of 2 to 3 nm FWHM, pulsed output power levels of 50 watts/bar with reliability values of over 2 billion shots to date (tests to be terminated after 10 billion shots), and reliable operation to pulse lengths of 1 ms. Pulse lengths up to 5 ms have been demonstrated at derated power levels, and CW performance at various power levels has been evaluated in a 'bar-in-groove' laser package. These high-power 1-cm stacked-bar arrays are now being manufactured for OEM use. Individual diode laser bars, ready for package-mounting by OEM customers, are being sold as commodity items. Commercial and medical applications of these laser arrays include solid-state laser pumping for metal-working, cutting, industrial measurement and control, ranging, wind-shear/atmospheric turbulence detection, X-ray generation, materials surface cleaning, microsurgery, ophthalmology, dermatology, and dental procedures.

  17. A High Power Frequency Doubled Fiber Laser

    NASA Technical Reports Server (NTRS)

    Thompson, Rob; Tu, Meirong; Aveline, Dave; Lundblad, Nathan; Maleki, Lute

    2003-01-01

    This slide presentation reviews the power frequencies for the doubled fiber laser. It includes information on the 780 nm laser, second harmonic generation in one crystal, cascading crystals, the tenability of laser systems, laser cooling, and directions for future work.

  18. Laser welding of polymers using high-power diode lasers

    NASA Astrophysics Data System (ADS)

    Bachmann, Friedrich G.; Russek, Ulrich A.

    2002-06-01

    Laser welding of polymers using high power diode lasers offers specific process advantages over conventional technologies, such as short process times while providing optically and qualitatively valuable weld seams, contactless yielding of the joining energy, absence of process induced vibrations, imposing minimal thermal stress and avoiding particle generation. Furthermore, this method exhibits high integration capabilities and automatization potential. Moreover, because of the current favorable cost development within the high power diode laser market laser welding of polymers has become more and more an industrially accepted joining method. This novel technology permits both, reliable high quality joining of mechanically and electronically highly sensitive micro components and hermetic sealing of macro components. There are different welding strategies available, which are adaptable to the current application. Within the frame of this discourse scientific and also application oriented result concerning laser transmission welding of polymers using preferably diode lasers are presented. Besides the sue laser system the fundamental process strategies as well as decisive process parameters are illustrated. The importance of optical, thermal and mechanical properties is discussed. Applications at real technical components will be presented, demonstrating the industrial implementation capability and the advantages of a novel technology.

  19. Laser welding of polymers using high-power diode lasers

    NASA Astrophysics Data System (ADS)

    Bachmann, Friedrich G.; Russek, Ulrich A.

    2003-09-01

    Laser welding of polymers using high power diode lasers offers specific process advantages over conventional technologies, such as short process times while providing optically and qualitatively valuable weld seams, contactless yielding of the joining energy, absence of process induced vibrations, imposing minimal thermal stress and avoiding particle generation. Furthermore this method exhibits high integration capabilities and automatization potential. Moreover, because of the current favorable cost development within the high power diode laser market laser welding of polymers has become more and more an industrially accepted joining method. This novel technology permits both, reliable high quality joining of mechanically and electronically highly sensitive micro components and hermetic sealing of macro components. There are different welding strategies available, which are adaptable to the current application. Within the frame of this discourse scientific and also application oriented results concerning laser transmission welding of polymers using preferably diode lasers are presented. Besides the used laser systems the fundamental process strategies as well as decisive process parameters are illustrated. The importance of optical, thermal and mechanical properties is discussed. Applications at real technical components will be presented, demonstrating the industrial implementation capability and the advantages of a novel technology.

  20. High power laser workover and completion tools and systems

    SciTech Connect

    Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O; Koblick, Yeshaya; Moxley, Joel F

    2014-10-28

    Workover and completion systems, devices and methods for utilizing 10 kW or more laser energy transmitted deep into the earth with the suppression of associated nonlinear phenomena. Systems and devices for the laser workover and completion of a borehole in the earth. These systems and devices can deliver high power laser energy down a deep borehole, while maintaining the high power to perform laser workover and completion operations in such boreholes deep within the earth.

  1. High power laser beam delivery monitoring for laser safety

    NASA Astrophysics Data System (ADS)

    Corder, D. A.; Evans, D. R.; Tyrer, J. R.; Freeland, C. M.; Myler, J. K.

    1997-07-01

    The output of high power lasers used for material processing presents extreme radiation hazards. In normal operation this hazard is removed by the use of local shielding to prevent accidental exposure and system design to ensure efficient coupling of radiation into the workpiece. Faults in laser beam delivery or utilization can give rise to hazardous levels of laser radiation. A passive hazard control strategy requires that the laser system be enclosed such that the full laser power cannot burn through the housing under fault conditions. Usually this approach is too restrictive. Instead, active control strategies can be used in which a fault condition is detected and the laser cut off. This reduces the requirements for protective housing. In this work a distinction is drawn between reactive and proactive strategies. Reactive strategies rely on detecting the effects of an errant laser beam, whereas proactive strategies can anticipate as well as detect fault conditions. This can avoid the need for a hazardous situation to exist. A proactive strategy in which the laser beam is sampled at the final turning mirror is described in this work. Two control systems have been demonstrated; the first checks that beam power is within preset limits, the second monitors incoming beam power and position, and the radiation reflected back from the cutting head. In addition to their safety functions the accurate monitoring of power provides an additional benefit to the laser user.

  2. High-power, high-intensity laser propagation and interactions

    SciTech Connect

    Sprangle, Phillip; Hafizi, Bahman

    2014-05-15

    This paper presents overviews of a number of processes and applications associated with high-power, high-intensity lasers, and their interactions. These processes and applications include: free electron lasers, backward Raman amplification, atmospheric propagation of laser pulses, laser driven acceleration, atmospheric lasing, and remote detection of radioactivity. The interrelated physical mechanisms in the various processes are discussed.

  3. Semiconductor nanowire lasers

    NASA Astrophysics Data System (ADS)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  4. High power laser downhole cutting tools and systems

    SciTech Connect

    Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O; Koblick, Yeshaya; Moxley, Joel F

    2015-01-20

    Downhole cutting systems, devices and methods for utilizing 10 kW or more laser energy transmitted deep into the earth with the suppression of associated nonlinear phenomena. Systems and devices for the laser cutting operations within a borehole in the earth. These systems and devices can deliver high power laser energy down a deep borehole, while maintaining the high power to perform cutting operations in such boreholes deep within the earth.

  5. High Power Fiber Lasers and Applications to Manufacturing

    NASA Astrophysics Data System (ADS)

    Richardson, Martin; McComb, Timothy; Sudesh, Vikas

    2008-09-01

    We summarize recent developments in high power fiber laser technologies and discuss future trends, particularly in their current and future use in manufacturing technologies. We will also describe our current research programs in fiber laser development, ultra-fast and new lasers, and will mention the expectations in these areas for the new Townes Laser Institute. It will focus on new core laser technologies and their applications in medical technologies, advanced manufacturing technologies and defense applications. We will describe a program on large mode area fiber development that includes results with the new gain-guiding approach, as well as high power infra-red fiber lasers. We will review the opportunities for high power fiber lasers in various manufacturing technologies and illustrate this with applications we are pursuing in the areas of femtosecond laser applications, advanced lithographies, and mid-IR technologies.

  6. Robotics For High Power Laser Beam Manipulation

    NASA Astrophysics Data System (ADS)

    Watson, Henry E.

    1989-03-01

    The research and development programs in manufacturing science at The Pennsylvania State University have a major emphasis on laser materials processing technology development. A major thrust of this program is the development of an intelligent robotic system which can manipulate a laser beam in three dimension with the precision required for welding. The robot is called LARS for Laser Articulated Robotic System. A gantry based robot was selected as the foundation for LARS and the system is divided into five major subsystems: robot, electronic control, vision, workhead, beam transport, and software. An overview of the Laser Robotics program including laser materials processing research programs will be provided.

  7. Damage-controlled high power lasers and plasma mirror application

    NASA Astrophysics Data System (ADS)

    Kiriyama, Hiromitsu; Ochi, Yoshihiro; Nishikino, Masaharu; Nagashima, Keisuke; Kawachi, Tetsuya; Itakura, Ryoji; Sugiyama, Akira; Kando, Masaki; Pirozhkov, A. S.; Nishiuchi, Mamiko; Bulanov, Sergei V.; Kondo, Kimonori; Kato, Yoshiaki

    2015-07-01

    Following three different types of high power lasers at Kansai Photon Science Institute are overviewed and controlling the laser damages in these laser systems are described: (1) PW-class Ti:sapphire laser for high field science, (2) zig-zag slab Nd:glass laser for x-ray laser pumping, and (3) high-repetition Yb:YAG thin-slab laser for THz generation. Also reported is the use of plasma mirror for characterization of short-wavelength ultrashort laser pulses. This new method will be useful to study evolution of plasma formation which leads to laser damages.

  8. High power femtosecond lasers at ELI-NP

    SciTech Connect

    Dabu, Razvan

    2015-02-24

    Specifications of the high power laser system (HPLS) designed for nuclear physics experiments are presented. Configuration of the 2 × 10 PW femtosecond laser system is described. In order to reach the required laser beam parameters, advanced laser techniques are proposed for the HPLS: parametric amplification and cross-polarized wave generation for the intensity contrast improvement and spectral broadening, acousto-optic programmable filters to compensate for spectral phase dispersion, optical filters for spectrum management, combined methods for transversal laser suppression.

  9. Overview on the high power excimer laser technology

    NASA Astrophysics Data System (ADS)

    Liu, Jingru

    2013-05-01

    High power excimer laser has essential applications in the fields of high energy density physics, inertial fusion energy and industry owing to its advantages such as short wavelength, high gain, wide bandwidth, energy scalable and repetition operating ability. This overview is aimed at an introduction and evaluation of enormous endeavor of the international high power excimer laser community in the last 30 years. The main technologies of high power excimer laser are reviewed, which include the pumping source technology, angular multiplexing and pulse compressing, beam-smoothing and homogenous irradiation, high efficiency and repetitive operation et al. A high power XeCl laser system developed in NINT of China is described in detail.

  10. High-power lasers for directed-energy applications.

    PubMed

    Sprangle, Phillip; Hafizi, Bahman; Ting, Antonio; Fischer, Richard

    2015-11-01

    In this article, we review and discuss the research programs at the Naval Research Laboratory (NRL) on high-power lasers for directed-energy (DE) applications in the atmosphere. Physical processes affecting propagation include absorption/scattering, turbulence, and thermal blooming. The power levels needed for DE applications require combining a number of lasers. In atmospheric turbulence, there is a maximum intensity that can be placed on a target that is independent of the initial beam spot size and laser beam quality. By combining a number of kW-class fiber lasers, scientists at the NRL have successfully demonstrated high-power laser propagation in a turbulent atmosphere and wireless recharging. In the NRL experiments, four incoherently combined fiber lasers having a total power of 5 kW were propagated to a target 3.2 km away. These successful high-power experiments in a realistic atmosphere formed the basis of the Navy's Laser Weapon System. We compare the propagation characteristics of coherently and incoherently combined beams without adaptive optics. There is little difference in the energy on target between coherently and incoherently combined laser beams for multi-km propagation ranges and moderate to high levels of turbulence. Unlike incoherent combining, coherent combining places severe constraints on the individual lasers. These include the requirement of narrow power spectral linewidths in order to have long coherence times as well as polarization alignment of all the lasers. These requirements are extremely difficult for high-power lasers. PMID:26560609

  11. Beam-path conditioning for high-power laser systems

    SciTech Connect

    Stephens, T.; Johnson, D.; Languirand, M.

    1990-01-01

    Heating of mirrors and windows by high-power radiation from a laser transmitter produces turbulent density gradients in the gas near the optical surfaces. If the gradients are left uncontrolled, the resulting phase errors reduce the intensity on the target and degrade the signal returned to a receiver. Beam path conditioning maximizes the efficiency of the optical system by alleviating thermal turbulence within the beam path. Keywords: High power radiation, Beam path, Optical surface, Laser beams, Reprints. (JHD)

  12. Freeform beam shaping for high-power multimode lasers

    NASA Astrophysics Data System (ADS)

    Laskin, Alexander; Laskin, Vadim

    2014-03-01

    Widening of using high power multimode lasers in industrial laser material processing is accompanied by special requirements to irradiance profiles in such technologies like metal or plastics welding, cladding, hardening, brazing, annealing, laser pumping and amplification in MOPA lasers. Typical irradiance distribution of high power multimode lasers: free space solid state, fiber-coupled solid state and diodes lasers, fiber lasers, is similar to Gaussian. Laser technologies can be essentially improved when irradiance distribution on a workpiece is uniform (flattop) or inverse-Gauss; when building high-power pulsed lasers it is possible to enhance efficiency of pumping and amplification by applying super-Gauss irradiance distribution with controlled convexity. Therefore, "freeform" beam shaping of multimode laser beams is an important task. A proved solution is refractive field mapping beam shaper like Shaper capable to control resulting irradiance profile - with the same unit it is possible to get various beam profiles and choose optimum one for a particular application. Operational principle of these devices implies transformation of laser irradiance distribution by conserving beam consistency, high transmittance, providing collimated low divergent output beam. Using additional optics makes it possible to create resulting laser spots of necessary size and round, elliptical or linear shape. Operation out of focal plane and, hence, in field of lower wavefront curvature, allows extending depth of field. The refractive beam shapers are implemented as telescopes and collimating systems, which can be connected directly to fiber-coupled lasers or fiber lasers, thus combining functions of beam collimation and irradiance transformation.

  13. Alpha high-power chemical laser program

    NASA Astrophysics Data System (ADS)

    Cordi, Anthony J.; Lurie, Henry; Callahan, David W.; Thomson, Matthew

    1993-06-01

    Alpha is a megawatt-class ground demonstration of a hydrogen fluoride, continuous wave, space-based chemical laser. The laser operates in the infrared at 2.8 microns. The basic device consists of a cylindrical combustion chamber that exhausts radially outward through circumferential nozzles into an annular lasing area. An annular ring resonator is used to extract the laser energy from this area. Technical firsts include: (1) use of aluminum combustion chamber/nozzle ring modules, (2) diamond turned, water-cooled optics made of molybdenum for low thermal distortion with good heat transfer, (3) use of uncooled silicon mirrors in a megawatt-class laser system, (4) an optical bench made of aluminum honeycomb, and (5) active controls to adjust alignment of selected mirrors and the optical bench.

  14. Cryogenic cooling for high power laser amplifiers

    NASA Astrophysics Data System (ADS)

    Perin, J. P.; Millet, F.; Divoky, M.; Rus, B.

    2013-11-01

    Using DPSSL (Diode Pumped Solid State Lasers) as pumping technology, PW-class lasers with enhanced repetition rates are developed. Each of the Yb YAG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz). The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 100 K-170 K with a heat flux of 1 MW*m-2. This paper describes the thermo-mechanical analysis for the design of the amplification laser head, presents a preliminary proposal for the required cryogenic cooling system and finally outlines the gain of cryogenic operation for the efficiency of high pulsed laser.

  15. Beam Stop For High-Power Lasers

    NASA Technical Reports Server (NTRS)

    Mcdermid, Iain S.; Williamson, William B.

    1990-01-01

    Graphite/aluminum plate absorbs most of light. Beam stop fits on standard optical mounting fixture. Graphite plate thick enough to absorb incident laser beam but thin enough to transfer heat quickly to heat sink. Device used for variety of blocking purposes. For example, blocks laser beam after it passes through experimental setup, or at each stage of setup so stages checked and tested in sequence. Negligible reflectance of device is valuable safety feature, protecting both users and equipment from reflections.

  16. Semiconductor cylinder fiber laser

    NASA Astrophysics Data System (ADS)

    Sandupatla, Abhinay; Flattery, James; Kornreich, Philipp

    2015-12-01

    We fabricated a fiber laser that uses a thin semiconductor layer surrounding the glass core as the gain medium. This is a completely new type of laser. The In2Te3 semiconductor layer is about 15-nm thick. The fiber laser has a core diameter of 14.2 μm, an outside diameter of 126 μm, and it is 25-mm long. The laser mirrors consist of a thick vacuum-deposited aluminum layer at one end and a thin semitransparent aluminum layer deposited at the other end of the fiber. The laser is pumped from the side with either light from a halogen tungsten incandescent lamp or a blue light emitting diode flash light. Both the In2Te3 gain medium and the aluminum mirrors have a wide bandwidth. Therefore, the output spectrum consists of a pedestal from a wavelength of about 454 to 623 nm with several peaks. There is a main peak at 545 nm. The main peak has an amplitude of 16.5 dB above the noise level of -73 dB.

  17. High power laser and cathode structure thereof

    SciTech Connect

    Nam, K. H.; Seguin, H. J.; Tulip, J.

    1981-09-08

    A cathode structure for gas lasers is disclosed that is comprised of a flat plate of non-conducting material positioned in the laser in spaced relation to the laser anode to define a discharge region therebetween, a two-dimensional array of metal sub-electrode rods passing through the plate and having their upper ends lying flush with the surface of the plate, a block of dielectric material positioned below the plate and containing a series of transverse channels therein, electric current conductors lying in the channels and adapted for connection to a power supply, the lower ends of the said rods passing through openings in the block into the channels to define a predetermined uniform gap between the ends of the rods and the electrical conductor, and a liquid electrolyte solution filling the channels and electrically connecting the sub-electrode rods and the conductors.

  18. Atmospheric propagation and combining of high-power lasers.

    PubMed

    Nelson, W; Sprangle, P; Davis, C C

    2016-03-01

    In this paper, we analyze beam combining and atmospheric propagation of high-power lasers for directed-energy (DE) applications. The large linewidths inherent in high-power fiber and slab lasers cause random phase and intensity fluctuations that occur on subnanosecond time scales. Coherently combining these high-power lasers would involve instruments capable of precise phase control and operation at rates greater than ∼10  GHz. To the best of our knowledge, this technology does not currently exist. This presents a challenging problem when attempting to phase lock high-power lasers that is not encountered when phase locking low-power lasers, for example, at milliwatt power levels. Regardless, we demonstrate that even if instruments are developed that can precisely control the phase of high-power lasers, coherent combining is problematic for DE applications. The dephasing effects of atmospheric turbulence typically encountered in DE applications will degrade the coherent properties of the beam before it reaches the target. Through simulations, we find that coherent beam combining in moderate turbulence and over multikilometer propagation distances has little advantage over incoherent combining. Additionally, in cases of strong turbulence and multikilometer propagation ranges, we find nearly indistinguishable intensity profiles and virtually no difference in the energy on the target between coherently and incoherently combined laser beams. Consequently, we find that coherent beam combining at the transmitter plane is ineffective under typical atmospheric conditions. PMID:26974640

  19. Method and apparatus for tuning high power lasers

    DOEpatents

    Hutchinson, Donald P.; Vandersluis, Kenneth L.

    1977-04-19

    This invention relates to high power gas lasers that are adapted to be tuned to a desired lasing wavelength through the use of a gas cell to lower the gain at a natural lasing wavelength and "seeding" the laser with a beam from a low power laser which is lasing at the desired wavelength. This tuning is accomplished with no loss of power and produces a pulse with an altered pulse shape. It is potentially applicable to all gas lasers.

  20. Laser beam application with high power fiber lasers

    NASA Astrophysics Data System (ADS)

    Beyer, Eckhard; Brenner, Berndt; Morgenthal, Lothar

    2007-05-01

    With the new industrial high power fiber lasers we have already stepped into a new generation of laser applications. These lasers are smaller, better, more cost-effective, and offer a processing "on the fly." Of utmost importance is their excellent beam quality which enables us to reduce the size of the focussing head including the scanning mirrors. With the reduced mass of the mirrors we can reach scanning frequencies up to 1.5 kHz and in special configurations up to 4 kHz. Using such mirrors with this high beam quality we can shape the key hole geometry, and thus it is possible to decrease the keyhole spiking, which always occur in the case of deep penetration welding. We can generate very thin and deep welding seams, which we have only experienced with electron beam welding. The excellent beam quality of the fiber lasers offers us a lot of new applications from deep penetration welding to high speed welding. By using beam scanning we are able to easily change the beam and the seam geometry. Furthermore, it is possible to work with this kind of laser from a distance of some meters between focussing/scanning head and the work piece. This technique is called remote processing or processing "on the fly." The excellent beam quality also enables us to cut very precisely, and due to the small cutting widths with a very high speed. In this case the main problem is that the roughness of the cutting edge increases a little bit. One reason for this is that we cannot blow out the mold as easily as we can do it with higher cutting widths. There are also polarized fiber lasers on the market where we can use the Brewster effect for different applications. The presentation will cover some physical basics including different industrial applications.

  1. Fibre ring cavity semiconductor laser

    SciTech Connect

    Duraev, V P; Medvedev, S V

    2013-10-31

    This paper presents a study of semiconductor lasers having a polarisation maintaining fibre ring cavity. We examine the operating principle and report main characteristics of a semiconductor ring laser, in particular in single- and multiple-frequency regimes, and discuss its application areas. (lasers)

  2. High-power laser source evaluation

    SciTech Connect

    Back, C.A.; Decker, C.D.; Dipeso, G.J.; Gerassimenko, M.; Managan, R.A.; Serduke, F.J.D.; Simonson, G.F.; Suter, L.J.

    1997-07-01

    This document reports progress in these areas: EXPERIMENTAL RESULTS FROM NOVA: TAMPED XENON UNDERDENSE X-RAY EMITTERS; MODELING MULTI-KEV RADIATION PRODUCTION OF XENON-FILLED BERYLLIUM CANS; MAPPING A CALCULATION FROM LASNEX TO CALE; HOT X RAYS FROM SEEDED NIF CAPSULES; HOHLRAUM DEBRIS MEASUREMENTS AT NOVA; FOAM AND STRUCTURAL RESPONSE CALCULATIONS FOR NIF NEUTRON EXPOSURE SAMPLE CASE ASSEMBLY DESIGN; NON-IGNITION X-RAY SOURCE FLUENCE-AREA PRODUCTS FOR NUCLEAR EFFECTS TESTING ON NIF. Also appended are reprints of two papers. The first is on the subject of ``X-Ray Production in Laser-Heated Xe Gas Targets.`` The second is on ``Efficient Production and Applications of 2- to 10-keV X Rays by Laser-Heated Underdense Radiators.``

  3. Improved Spatial Filter for high power Lasers

    SciTech Connect

    Estabrook, Kent G.; Celliers, Peter M.; Murray, James E.; DaSilva, Luiz; MacGowan, Brian J.; Rubenchik, Alexander M.; Manes, Kenneth R.; Drake, Robert P.; Afeyan, Bedros

    1998-06-01

    A new pinhole architecture incorporates features intended to reduce the rate of plasma generation in a spatial filter for high-energy laser pulse beams. An elongated pinhole aperture is provided in an apertured body for rejecting off-axis rays of the laser pulse beam. The internal surface of the elongated aperture has a diameter which progressively tapers from a larger entrance cross-sectional area at an inlet to a smaller output cross-sectional area at an outlet. The tapered internal surface causes off-axis rays to be refracted in a low density plasma layer that forms on the internal surface or specularly reflected at grazing incidence from the internal surface. Off-axis rays of the high-energy pulse beam are rejected by this design. The external surface of the apertured body adjacent to the larger entrance cross-sectional area at the inlet to the elongated aperture is angled obliquely with respect to the to direction of the path of the high-energy laser pulse beam to backscatter off-axis rays away from the high-energy pulse beam. The aperture is formed as a truncated cone or alternatively with a tapered square cross-section. The internal surface of the aperture is coated with an ablative material, preferably high-density material which can be deposited with an exploding wire.

  4. High power cooled mini-DIL pump lasers

    NASA Astrophysics Data System (ADS)

    Liang, Bo; Zayer, Nadhum; Chen, Bob; He, Dylan; Pliska, Tomas

    2009-11-01

    The miniature dual-inline (mini-DIL) pump laser becomes more attactive for compact optical amplifiers designs due to the advantage of smaller footprint, lower power consumption and lower cost. In this paper we report the development of a new generation of small form factor, high power "cooled" mini-DIL 980-nm pump lasers module for compact EDFA application.

  5. Overview of the NASA high power laser program

    NASA Technical Reports Server (NTRS)

    Lundholm, J. G.

    1976-01-01

    The overall objectives of the NASA High Power Laser Program are reviewed along with their structure and center responsibilities. Present and future funding, laser power transmission in space, selected program highlights, the research and technology schedule, and the expected pace of the program are briefly considered.

  6. Device for wavefront correction in an ultra high power laser

    DOEpatents

    Ault, Earl R.; Comaskey, Brian J.; Kuklo, Thomas C.

    2002-01-01

    A system for wavefront correction in an ultra high power laser. As the laser medium flows past the optical excitation source and the fluid warms its index of refraction changes creating an optical wedge. A system is provided for correcting the thermally induced optical phase errors.

  7. Stretchers and compressors for ultra-high power laser systems

    SciTech Connect

    Yakovlev, I V

    2014-05-30

    This review is concerned with pulse stretchers and compressors as key components of ultra-high power laser facilities that take advantage of chirped-pulse amplification. The potentialities, characteristics, configurations and methods for the matching and alignment of these devices are examined, with particular attention to the history of the optics of ultra-short, ultra-intense pulses before and after 1985, when the chirped-pulse amplification method was proposed, which drastically changed the view of the feasibility of creating ultra-high power laser sources. The review is intended primarily for young scientists and experts who begin to address the amplification and compression of chirped pulses, experts in laser optics and all who are interested in scientific achievements in the field of ultra-high power laser systems. (review)

  8. Electron accleration using high power laser

    NASA Astrophysics Data System (ADS)

    Najmudin, Zulfikar

    1998-04-01

    The 30 TW Nd:Glass Vulcan laser has been used to extensively study the Forward Raman Scatter instability in plasmas. This instability is of interest since it produces large amplitude relativistic plasma waves, which can trap and accelerate plasma electrons to high energies. Recently we have accelerated particles up to 100 MeV with this process. This is beyond the expected classical dephasing energy, for the plasma waves in our experiment which have a Lorentz factor γ ≈ 7. The greater acceleration has been attributed to the dynamics of the beam loading process of the plasma waves due to wavebreaking. By imaging the small angle Thomson scattered light from an orthogonally injected probe beam, we observe the dimensions of the accelerating plasma wave. It is seen that electron energies are almost independent of the length of the plasma wave. This is because the dephasing length is of the order of the Rayleigh length (≈ 100 μm). However the plasma wave is seen to extend to lengths as great as 3.5 mm. This is indicative of a high intensity being present throughout the length of the gas jet used, and indicates the presence of channelling of the laser beam. However the unstable nature of FRS, means that it is unsuitable for next generation high energy particle acclerators. For this we require much more controllable acceleration over greater distances. This can be achieved with the laser wakefield accelerator. For this purpose we have also been performing experiments at the LULI short pulse facility at Ecole Polytechnique. In these experiments we have been able to accelerate large numbers of injected electrons at 3 MeV to 4 MeV and above, after carefully taking into consideration sources of noise.

  9. High-power laser source evaluation

    SciTech Connect

    Back, C. A.; Decker, C. D.; Davis, J. F.; Dixit, S.; Grun, J.; Managan, R. A.; Serduke, F. J. D.; Simonson, G. F.; Suter, L. J.; Wuest, C. R.; Ze, F.

    1998-07-01

    Robust Nuclear-Weapons-Effects Testing (NWET) capability will be needed for the foreseeable future to ensure the performance and reliability, in nuclear environments, of the evolving U.S. stockpile of weapons and other assets. Ongoing research on the use of high-energy lasers to generate environments of utility in nuclear weapon radiation effects simulations is addressed in the work described in this report. Laser-driven hohlraums and a variety of other targets have been considered in an effort to develop NWET capability of the highest possible fidelity in above-ground experiments. The envelope of large-system test needs is shown as the gray region in fig. 1. It does not represent the spectrum of any device; it is just the envelope of the spectral region of outputs from a number of possible devices. It is a goal of our laser-only and ignition-capsule source development work to generate x rays that fall somewhere in this envelope. One of the earlier appearances of this envelope is in ref. 1. The Defense Special Weapons Agency provided important support for the work described herein. A total of $520K was provided in the 1997 IACROs 97-3022 for Source Development and 97-3048 for Facilitization. The period of performance specified in the Statement of Work ran from 28 February 1997 until 30 November 1997. This period was extended, by agreement with DSWA, for two reasons: 1) despite the stated period of performance, funds were not available at LLNL to begin this work until somewhat later in the fiscal year, and 2) we agreed to stretch the current resources until follow-on funds were in hand, to minimize effects of ramping down and up again. The tasks addressed in this report are the following: 1) Non-ignition-source model benchmarking and design. This involves analysis of existing and new data on laser-only sources to benchmark LASNEX predictions 2) Non-ignition-source development experiments 3) Ignition capsule design to improve total x-ray output and simplify target

  10. Transparent ceramic photo-optical semiconductor high power switches

    DOEpatents

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  11. High power solid state laser modulator

    DOEpatents

    Birx, Daniel L.; Ball, Don G.; Cook, Edward G.

    2004-04-27

    A multi-stage magnetic modulator provides a pulse train of .+-.40 kV electrical pulses at a 5-7 kHz repetition rate to a metal vapor laser. A fractional turn transformer steps up the voltage by a factor of 80 to 1 and magnetic pulse compression is used to reduce the pulse width of the pulse train. The transformer is fabricated utilizing a rod and plate stack type of construction to achieve a high packing factor. The pulses are controlled by an SCR stack where a plurality of SCRs are electrically connected in parallel, each SCR electrically connected to a saturable inductor, all saturable inductors being wound on the same core of magnetic material for enhanced power handling characteristics.

  12. Ceramic tile grout removal & sealing using high power lasers

    SciTech Connect

    Lawrence, J.; Li, L.; Spencer, J.T.

    1996-12-31

    Work has been conducted using a Nd:YAG laser, a CO{sub 2} laser and a high power diode laser (HPDL) in order to determine the feasibility of removing contaminated tile grout from the void between adjoining vitrified ceramic tiles, and to seal the void permanently with a material having an impermeable surface glaze. Reported on in the paper are; the basic process phenomena, the process effectiveness, suitable vitrifiable material development, a heat affect study and a morphological and compositional analysis.

  13. Diode pumped alkali vapor lasers for high power applications

    NASA Astrophysics Data System (ADS)

    Zweiback, J.; Krupke, B.; Komashko, A.

    2008-02-01

    General Atomics has been engaged in the development of diode pumped alkali vapor lasers. We have been examining the design space looking for designs that are both efficient and easily scalable to high powers. Computationally, we have looked at the effect of pump bandwidth on laser performance. We have also looked at different lasing species. We have used an alexandrite laser to study the relative merits of different designs. We report on the results of our experimental and computational studies.

  14. Phosphate glass useful in high power lasers

    DOEpatents

    Hayden, Joseph S.; Sapak, David L.; Ward, Julia M.

    1990-01-01

    A low- or no-silica phosphate glass useful as a laser medium and having a high thermal conductivity, K.sub.90.degree. C. >0.8 W/mK, and a low coefficient of thermal expansion, .alpha..sub.20.degree.-40.degree. C. <80.times.10.sup.-7 /.degree.C., consists essentially of (on a batch composition basis): the amounts of Li.sub.2 O and Na.sub.2 O providing an average alkali metal ionic radius sufficiently low whereby said glass has K.sub.90.degree. C. >0.8 W/mK and .alpha..sub.20.degree.-40.degree. C. <80.times.10.sup.-7 /.degree.C., and wherein, when the batch composition is melted in contact with a silica-containing surface, the final glass composition contains at most about 3.5 mole % of additional silica derived from such contact during melting. The Nd.sub.2 O.sub.3 can be replaced by other lasing species.

  15. Cost-effective telecom/datacom semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Chen, Nong; Chen, Dick T. R.; Hsin, Wei; Chen, Steven Bo; Xiong, Frank; Erlig, Hernan; Chen, Paul; Yeh, Xian-li; Scott, David C.; Sherer, Axel

    2007-11-01

    The recent development of semiconductor laser technologies for cost-effective telecom/datacom applications is reviewed in details in this paper. This includes the laser design, laser chip technology, laser packaging technology and other low cost lasers (chip + packaging). Some design and simulation examples in Archcom laser production are described first. A latest trend in the wafer scale testing/characterization/screening technology for low cost semiconductor laser mass production is discussed then. An advanced long wavelength high power single mode surface emitting laser with wafer scale characterization using our unique mask free focused ion beam (FIB) etching technology is also demonstrated. Detailed descriptions on our wide temperature range (-50 °C to +105 °C) G-PON distributed feedback (DFB) semiconductor lasers with high performance and low cost wafer design are included. Cost reduction innovations in laser package with our beam profile improved laser and optical feedback insensitive (OFBI) laser are also addressed.

  16. Phosphate glass useful in high power lasers

    DOEpatents

    Hayden, J.S.; Sapak, D.L.; Ward, J.M.

    1990-05-29

    A low- or no-silica phosphate glass useful as a laser medium and having a high thermal conductivity, K[sub 90 C] > 0.8 W/mK, and a low coefficient of thermal expansion, [alpha][sub 20--40 C] < 80[times]10[sup [minus]7]/C, consists essentially of (on a batch composition basis Mole %): P[sub 2]O[sub 5], 45-70; Li[sub 2]O, 15-35; Na[sub 2]O, 0-10; Al[sub 2]O[sub 3], 10-15; Nd[sub 2]O[sub 3], 0.01-6; La[sub 2]O[sub 3], 0-6; SiO[sub 2], 0-8; B[sub 2]O[sub 3], 0-8; MgO, 0-18; CaO, 0-15; SrO, 0-9; BaO, 0-9; ZnO, 0-15; the amounts of Li[sub 2]O and Na[sub 2]O providing an average alkali metal ionic radius sufficiently low whereby said glass has K[sub 90 C] > 0.8 W/mK and [alpha][sub 20--40 C] < 80[times]10[sup [minus]7]/C, and wherein, when the batch composition is melted in contact with a silica-containing surface, the final glass composition contains at most about 3.5 mole % of additional silica derived from such contact during melting. The Nd[sub 2]O[sub 3] can be replaced by other lasing species. 3 figs.

  17. Transient Plasma Photonic Crystals for High-Power Lasers

    NASA Astrophysics Data System (ADS)

    Lehmann, G.; Spatschek, K. H.

    2016-06-01

    A new type of transient photonic crystals for high-power lasers is presented. The crystal is produced by counterpropagating laser beams in plasma. Trapped electrons and electrically forced ions generate a strong density grating. The lifetime of the transient photonic crystal is determined by the ballistic motion of ions. The robustness of the photonic crystal allows one to manipulate high-intensity laser pulses. The scheme of the crystal is analyzed here by 1D Vlasov simulations. Reflection or transmission of high-power laser pulses are predicted by particle-in-cell simulations. It is shown that a transient plasma photonic crystal may act as a tunable mirror for intense laser pulses. Generalizations to 2D and 3D configurations are possible.

  18. Transient Plasma Photonic Crystals for High-Power Lasers.

    PubMed

    Lehmann, G; Spatschek, K H

    2016-06-01

    A new type of transient photonic crystals for high-power lasers is presented. The crystal is produced by counterpropagating laser beams in plasma. Trapped electrons and electrically forced ions generate a strong density grating. The lifetime of the transient photonic crystal is determined by the ballistic motion of ions. The robustness of the photonic crystal allows one to manipulate high-intensity laser pulses. The scheme of the crystal is analyzed here by 1D Vlasov simulations. Reflection or transmission of high-power laser pulses are predicted by particle-in-cell simulations. It is shown that a transient plasma photonic crystal may act as a tunable mirror for intense laser pulses. Generalizations to 2D and 3D configurations are possible. PMID:27314721

  19. Completely monolithic linearly polarized high-power fiber laser oscillator

    NASA Astrophysics Data System (ADS)

    Belke, Steffen; Becker, Frank; Neumann, Benjamin; Ruppik, Stefan; Hefter, Ulrich

    2014-03-01

    We have demonstrated a linearly polarized cw all-in-fiber oscillator providing 1 kW of output power and a polarization extinction ratio (PER) of up to 21.7 dB. The design of the laser oscillator is simple and consists of an Ytterbium-doped polarization maintaining large mode area (PLMA) fiber and suitable fiber Bragg gratings (FBG) in matching PLMA fibers. The oscillator has nearly diffraction-limited beam quality (M² < 1.2). Pump power is delivered via a high power 6+1:1 pump coupler. The slope efficiency of the laser is 75 %. The electro/optical efficiency of the complete laser system is ~30 % and hence in the range of Rofin's cw non-polarized fiber lasers. Choosing an adequate bending diameter for the Yb-doped PLMA fiber, one polarization mode as well as higher order modes are sufficiently supressed1. Resulting in a compact and robust linearly polarized high power single mode laser without external polarizing components. Linearly polarized lasers are well established for one dimensional cutting or welding applications. Using beam shaping optics radially polarized laser light can be generated to be independent from the angle of incident to the processing surface. Furthermore, high power linearly polarized laser light is fundamental for nonlinear frequency conversion of nonlinear materials.

  20. In-volume heating using high-power laser diodes

    NASA Astrophysics Data System (ADS)

    Denisenkov, Valentin S.; Kiyko, Vadim V.; Vdovin, Gleb V.

    2015-03-01

    High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface heating with different approaches to make the heat distribution more uniform and the process more efficient. High-power lasers can in theory provide in-bulk heating which can sufficiently increase the uniformity of heat distribution thus making the process more efficient. We chose two media (vegetable fat and glucose) for feasibility experiments. First, we checked if the media have necessary absorption coefficients on the wavelengths of commercially available laser diodes (940-980 nm). This was done using spectrophotometer at 700-1100 nm which provided the dependences of transmission from the wavelength. The results indicate that vegetable fat has noticeable transmission dip around 925 nm and glucose has sufficient dip at 990 nm. Then, after the feasibility check, we did numerical simulation of the heat distribution in bulk using finite elements method. Based on the results, optimal laser wavelength and illuminator configuration were selected. Finally, we carried out several pilot experiments with high-power diodes heating the chosen media.

  1. Hybrid metal-semiconductor mirror for high power VECSEL

    NASA Astrophysics Data System (ADS)

    Laurain, Alexandre; Gbele, Kokou; Hader, Jorg; Stolz, Wolfgang; Koch, Stephan; Ruiz Perez, Antje; Moloney, Jerome V.

    2016-03-01

    We demonstrate a low thermal impedance hybrid mirror VECSEL. We used only 14 pairs of AlGaAs/AlAs, transparent at the pump wavelength, and we used a patterned mask to deposit pure gold on areas of the chip to be pumped, and Ti/Au on other area to circumvent the poor adhesion of gold on GaAs. A higher gain is observed on an area metallized with pure gold and an output power of 4W was obtained, showing the effectiveness of the metallic mirror and validating the bonding quality. Chip processing and laser characteristics are studied in detail and compared to simulations.

  2. Diamond optical components for high-power and high-energy laser applications

    NASA Astrophysics Data System (ADS)

    Anoikin, Eugene; Muhr, Alexander; Bennett, Andrew; Twitchen, Daniel; de Wit, Henk

    2015-02-01

    High-power and high-energy laser systems have firmly established their industrial presence with applications that span materials processing; high - precision and high - throughput manufacturing; semiconductors, and defense. Along with high average power CO2 lasers operating at wavelengths of ~ 10 microns, solid state lasers and fiber lasers operating at ~ 1 micron wavelength are now increasingly being used, both in the high average power and high energy pulse regimes. In recent years, polycrystalline diamond has become the material of choice when it comes to making optical components for multi-kilowatt CO2 lasers at 10 micron, outperforming ZnSe due to its superior thermo-mechanical characteristics. For 1 micron laser systems, fused silica has to date been the most popular optical material owing to its outstanding optical properties. This paper characterizes high - power / high - energy performance of anti-reflection coated optical windows made of different grades of diamond (single crystal, polycrystalline) and of fused silica. Thermo-optical modeling results are also presented for water cooled mounted optical windows. Laser - induced damage threshold tests are performed and analyzed. It is concluded that diamond is a superior optical material for working with extremely high-power and high-energy laser beams at 1 micron wavelength.

  3. High-power synchronously pumped femtosecond Raman fiber laser.

    PubMed

    Churin, D; Olson, J; Norwood, R A; Peyghambarian, N; Kieu, K

    2015-06-01

    We report a high-power synchronously pumped femtosecond Raman fiber laser operating in the normal dispersion regime. The Raman laser is pumped by a picosecond Yb(3+)-doped fiber laser. It produces highly chirped pulses with energy up to 18 nJ, average power of 0.76 W and 88% efficiency. The pulse duration is measured to be 147 fs after external compression. We observed two different regimes of operation of the laser: coherent and noise-like regime. Both regimes were experimentally characterized. Numerical simulations are in a good agreement with experimental results. PMID:26030549

  4. Integration of high power lasers in bending tools

    NASA Astrophysics Data System (ADS)

    Bammer, F.; Holzinger, B.; Humenberger, G.; Schuöcker, D.; Schumi, T.

    The integration of high power lasers into bending tools creates a possibility to bend brittle materials with conventional presses. A diode laser, which is based on 200W-laser-bars and a solid state laser with 3 kW are used in this work. By heating the material within a narrow zone the ductility is increased and the forming process can be enabled. The assembly of the heat source within the bending tools is a prerequisite in order to feed energy into the workpiece before, during and after the forming process. As a result the heating and forming process can be optimized regarding any material.

  5. High Power Laser Hybrid Welding - Challenges and Perspectives

    NASA Astrophysics Data System (ADS)

    Nielsen, Steen Erik

    High power industrial lasers at power levels up to 100 kW is now available on the market. Therefore, welding of thicker materials has become of interest for the heavy metal industry e.g. shipyards and wind mill producers. Further, the power plant industry, producers of steel pipes, heavy machinery and steel producers are following this new technology with great interest. At Lindø Welding Technology (LWT), which is a subsidiary to FORCE Technology, a 32-kwatt disc laser is installed. At this laser facility, welding procedures related to thick section steel applications are developed. Material thicknesses between 40 and 100 mm are currently of interest. This paper describes some of the challenges that are related to the development of the high power hybrid laser welding process as well as to the perspectives for the technology as a production tool for the heavy metal industry.

  6. Long distance high power optical laser fiber break detection and continuity monitoring systems and methods

    DOEpatents

    Rinzler, Charles C.; Gray, William C.; Faircloth, Brian O.; Zediker, Mark S.

    2016-02-23

    A monitoring and detection system for use on high power laser systems, long distance high power laser systems and tools for performing high power laser operations. In particular, the monitoring and detection systems provide break detection and continuity protection for performing high power laser operations on, and in, remote and difficult to access locations.

  7. High-power disk lasers: advances and applications

    NASA Astrophysics Data System (ADS)

    Havrilla, David; Ryba, Tracey; Holzer, Marco

    2012-03-01

    Though the genesis of the disk laser concept dates to the early 90's, the disk laser continues to demonstrate the flexibility and the certain future of a breakthrough technology. On-going increases in power per disk, and improvements in beam quality and efficiency continue to validate the genius of the disk laser concept. As of today, the disk principle has not reached any fundamental limits regarding output power per disk or beam quality, and offers numerous advantages over other high power resonator concepts, especially over monolithic architectures. With about 2,000 high power disk lasers installations, and a demand upwards of 1,000 lasers per year, the disk laser has proven to be a robust and reliable industrial tool. With advancements in running cost, investment cost and footprint, manufacturers continue to implement disk laser technology with more vigor than ever. This paper will explain recent advances in disk laser technology and process relevant features of the laser, like pump diode arrangement, resonator design and integrated beam guidance. In addition, advances in applications in the thick sheet area and very cost efficient high productivity applications like remote welding, remote cutting and cutting of thin sheets will be discussed.

  8. Thermal lensing compensation optics for high power lasers

    NASA Astrophysics Data System (ADS)

    Scaggs, Michael; Haas, Gil

    2011-03-01

    Athermalization of focusing objectives is a common technique for optimizing imaging systems in the infrared where thermal effects are a major concern. The athermalization is generally done within the spectrum of interest and not generally applied to a single wavelength. The predominate glass used with high power infrared lasers in the near infrared of one micron, such as Nd:YAG and fiber lasers, is fused silica which has excellent thermal properties. All glasses, however, have a temperature coefficient of index of refraction (dn/dT) where as the glass heats up its index of refraction changes. Most glasses, fused silica included, have a positive dn/dT. A positive dn/dT will cause the focal length of the lens to decrease with a temperature rise. Many of the fluoride glasses, like CaF2, BaF2, LiF2, etc. have a negative dn/dT. By applying athermalization techniques of glass selection and optical design, the thermal lensing in a laser objective of a high power laser system can be substantially mitigated. We describe a passive method for minimizing thermal lensing of high power laser optics.

  9. A High Power Amplifier for a Single Mode 1064 Laser

    NASA Astrophysics Data System (ADS)

    Stites, R. W.; O'Hara, K. M.

    2011-05-01

    We report on the construction of a high power amplifier system for a single mode 1064 nm laser. At the heart of this device is a 0.27% neodymium doped yttrium orthovanadate crystal that is double end pumped by two 30 Watt broadband diode arrays at 808 nm. For a 50 Watt TEM00 single freqency seed laser, we have observed an amplified power output in excess of 60 Watts for single pass configuration. A further increase in output power can be attained by retroreflecting the beam back through the crystal a second time. Such a device has direct application in the construction of optical lattices where high power single frequency lasers are required.

  10. High power continuous-wave Alexandrite laser with green pump

    NASA Astrophysics Data System (ADS)

    Ghanbari, Shirin; Major, Arkady

    2016-07-01

    We report on a continuous-wave (CW) Alexandrite (Cr:BeAl2O4) laser, pumped by a high power green source at 532 nm with a diffraction limited beam. An output power of 2.6 W at 755 nm, a slope efficiency of 26%, and wavelength tunability of 85 nm have been achieved using 11 W of green pump. To the best of our knowledge, this is the highest CW output power of a high brightness laser pumped Alexandrite laser reported to date. The results obtained in this experiment can lead to the development of a high power tunable CW and ultrafast sources of the near-infrared or ultraviolet radiation through frequency conversion.

  11. Generation of strongly coupled plasmas by high power excimer laser

    NASA Astrophysics Data System (ADS)

    Zhu, Yongxiang; Liu, Jingru; Zhang, Yongsheng; Hu, Yun; Zhang, Jiyan; Zheng, Zhijian; Ye, Xisheng

    2013-05-01

    (ultraviolet). To generate strongly coupled plasmas (SCP) by high power excimer laser, an Au-CH-Al-CH target is used to make the Al sample reach the state of SCP, in which the Au layer transforms laser energy to X-ray that heating the sample by volume and the CH layers provides necessary constraints. With aid of the MULTI-1D code, we calculate the state of the Al sample and its relationship with peak intensity, width and wavelength of laser pulses. The calculated results suggest that an excimer laser with peak intensity of the magnitude of 1013W/cm2 and pulse width being 5ns - 10ns is suitable to generate SCP with the temperature being tens of eV and the density of electron being of the order of 1022/cm-3. Lasers with shorter wavelength, such as KrF laser, are preferable.

  12. Stabilized High Power Laser for Advanced Gravitational Wave Detectors

    NASA Astrophysics Data System (ADS)

    Willke, B.; Danzmann, K.; Fallnich, C.; Frede, M.; Heurs, M.; King, P.; Kracht, D.; Kwee, P.; Savage, R.; Seifert, F.; Wilhelm, R.

    2006-03-01

    Second generation gravitational wave detectors require high power lasers with several 100W of output power and with very low temporal and spatial fluctuations. In this paper we discuss possible setups to achieve high laser power and describe a 200W prestabilized laser system (PSL). The PSL noise requirements for advanced gravitational wave detectors will be discussed in general and the stabilization scheme proposed for the Advanced LIGO PSL will be described. Special emphasis will be given to the most demanding power stabilization requiremets and new results (RIN <= 4×10-9/surdHz) will be presented.

  13. Epitaxial design of ultra high power tunable laser gain section

    NASA Astrophysics Data System (ADS)

    Zhang, Yaping; Benson, Trevor M.

    2005-09-01

    High power widely tunable lasers are extremely desirable for telecom applications as a replacement for distributed feedback (DFB) lasers in wavelength division multiplexing (WDM) systems, due to their dynamic provision properties. They are also sought after for many other applications, such as phased radar systems, optical switching and routing. This paper introduces novel design ideas and approaches on how to achieve ultra high power in the design of an InGaAsP-InP based widely tunable laser gain section. The inventive ideas are basically composed of two parts. Firstly, to increase the facet optical output power by the inclusion of an InP spacer layer below the ridge and above the multiple quantum wells (MQWs) stack, in order to have extra freedom in the control of widening the single mode ridge width. Secondly, to reduce the free-carrier absorption loss by the inclusion of a bulk balance layer structure below the MQWs stack and above the buffer layer, so as to largely shift the optical mode distribution to the intrinsic and n-doped side of the epilayer structure where the free-carrier absorption loss is lower than that of the p-doped side. Simulation results show that the proposed epilayer designs of the ultra high power gain sections would greatly increase the facet optical output power of a tunable laser, by up to about 80%. It should be noted that these novel epilayer design ideas and approaches developed for the gain section are applicable to the designs of ultra high power DFB lasers and other InGaAsP-InP based lasers.

  14. High power laser having a trivalent liquid host

    SciTech Connect

    Ault, Earl R.

    2005-08-16

    A laser having a lasing chamber and a semiconductor pumping device with trivalent titanium ions dissolved in a liquid host within the lasing chamber. Since the host is a liquid, it can be removed from the optical cavity when it becomes heated avoiding the inevitable optical distortion and birefringence common to glass and crystal hosts.

  15. Semiconductor film Cherenkov lasers

    NASA Astrophysics Data System (ADS)

    Walsh, John E.

    1994-12-01

    The technical achievements for the project 'Semiconductor Film Cherenkov Lasers' are summarized. Described in the fourteen appendices are the operation of a sapphire Cherenkov laser and various grating-coupled oscillators. These coherent radiation sources were operated over the spectral range extending from 3 mm down to 400 micrometers. The utility of various types of open, multi-grating resonators and mode-locked operation were also demonstrated. In addition to these experiments, which were carried out with a 10-100 kV pulse generator, a low-energy (3-3.6 MeV) Van de Graaff generator and a low-energy RF linac (2.8 MeV) were used to investigate the properties of continuum incoherent Smith-Purcell radiation. It was shown that levels of intensity comparable to the infrared beam lines on a synchrotron could be obtained and thus that grating-coupled sources are potentially an important new source for Fourier transform spectroscopy. Finally, a scanning electron microscope was adapted for investigating mu-electron-beam-driven far-infrared sources. At the close of the project, spontaneous emission over the 288-800 micrometers band had been observed. Intensity levels were in accord with expectations based on theory. One or more of the Appendices address these topics in detail.

  16. High Energy Density Sciences with High Power Lasers at SACLA

    NASA Astrophysics Data System (ADS)

    Kodama, Ryosuke

    2013-10-01

    One of the interesting topics on high energy density sciences with high power lasers is creation of extremely high pressures in material. The pressures of more than 0.1 TPa are the energy density corresponding to the chemical bonding energy, resulting in expectation of dramatic changes in the chemical reactions. At pressures of more than TPa, most of material would be melted on the shock Hugoniot curve. However, if the temperature is less than 1eV or lower than a melting point at pressures of more than TPa, novel solid states of matter must be created through a pressured phase transition. One of the interesting materials must be carbon. At pressures of more than TPa, the diamond structure changes to BC and cubic at more than 3TPa. To create such novel states of matter, several kinds of isentropic-like compression techniques are being developed with high power lasers. To explore the ``Tera-Pascal Science,'' now we have a new tool which is an x-ray free electron laser as well as high power lasers. The XFEL will clear the details of the HED states and also efficiently create hot dense matter. We have started a new project on high energy density sciences using an XFEL (SACLA) in Japan, which is a HERMES (High Energy density Revolution of Matter in Extreme States) project.

  17. Cascaded combiners for a high power CW fiber laser

    NASA Astrophysics Data System (ADS)

    Tan, Qirui; Ge, Tingwu; Zhang, Xuexia; Wang, Zhiyong

    2016-02-01

    We report cascaded combiners for a high power continuous wave (CW) fiber laser in this paper. The cascaded combiners are fabricated with an improved lateral splicing process. During the fusing process, there is no stress or tension between the pump fiber and the double-cladding fiber. Thus, the parameters of the combiner are better than those that have been reported. The coupling efficiency is 98.5%, and the signal insertion loss is 1%. The coupling efficiency of the cascaded combiners is 97.5%. The pump lights are individually coupled into the double-cladding fiber via five combiners. The thermal effects cannot cause damage to the combiners and the cascaded combiners can operate stably in high power CW fiber lasers. We also develop a high power CW fiber laser that generates a maximum 780 W of CW signal power at 1080 nm with 71% optical-to-optical conversion efficiency. The fiber laser is pumped via five intra-cavity cascaded combiners and five extra-cavity cascaded combiners with a maximum pump power of 1096 W and a pump wavelength of 975 nm.

  18. High speed micromachining with high power UV laser

    NASA Astrophysics Data System (ADS)

    Patel, Rajesh S.; Bovatsek, James M.

    2013-03-01

    Increasing demand for creating fine features with high accuracy in manufacturing of electronic mobile devices has fueled growth for lasers in manufacturing. High power, high repetition rate ultraviolet (UV) lasers provide an opportunity to implement a cost effective high quality, high throughput micromachining process in a 24/7 manufacturing environment. The energy available per pulse and the pulse repetition frequency (PRF) of diode pumped solid state (DPSS) nanosecond UV lasers have increased steadily over the years. Efficient use of the available energy from a laser is important to generate accurate fine features at a high speed with high quality. To achieve maximum material removal and minimal thermal damage for any laser micromachining application, use of the optimal process parameters including energy density or fluence (J/cm2), pulse width, and repetition rate is important. In this study we present a new high power, high PRF QuasarR 355-40 laser from Spectra-Physics with TimeShiftTM technology for unique software adjustable pulse width, pulse splitting, and pulse shaping capabilities. The benefits of these features for micromachining include improved throughput and quality. Specific example and results of silicon scribing are described to demonstrate the processing benefits of the Quasar's available power, PRF, and TimeShift technology.

  19. Reliability of high power laser diodes with external optical feedback

    NASA Astrophysics Data System (ADS)

    Bonsendorf, Dennis; Schneider, Stephan; Meinschien, Jens; Tomm, Jens W.

    2016-03-01

    Direct diode laser systems gain importance in the fields of material processing and solid-state laser pumping. With increased output power, also the influence of strong optical feedback has to be considered. Uncontrolled optical feedback is known for its spectral and power fluctuation effects, as well as potential emitter damage. We found that even intended feedback by use of volume Bragg gratings (VBG) for spectral stabilization may result in emitter lifetime reduction. To provide stable and reliable laser systems design, guidelines and maximum feedback ratings have to be found. We present a model to estimate the optical feedback power coupled back into the laser diode waveguide. It includes several origins of optical feedback and wide range of optical elements. The failure thresholds of InGaAs and AlGaAs bars have been determined not only at standard operation mode but at various working points. The influence of several feedback levels to laser diode lifetime is investigated up to 4000h. The analysis of the semiconductor itself leads to a better understanding of the degradation process by defect spread. Facet microscopy, LBIC- and electroluminescence measurements deliver detailed information about semiconductor defects before and after aging tests. Laser diode protection systems can monitor optical feedback. With this improved understanding, the emergency shutdown threshold can be set low enough to ensure laser diode reliability but also high enough to provide better machine usability avoiding false alarms.

  20. High power laser applications in Nippon Steel Corporation

    NASA Astrophysics Data System (ADS)

    Minamida, Katsuhiro

    2003-03-01

    The full-scale use of lasers in the steel industry began 25 years ago with their applications as controllable light sources. The laser systems contribute to increase efficiency and quality of the steel making processes, and also save energy of resources and labor. Laser applications in the steel making process generally require high input energy, however, it is essential to consider the interaction between the laser beam and materials. In particular, the reflectivity of the laser beam on the surface of material and the quantity of the laser-induced plasma are critical parameters for high efficient processes. We newly developed methods and systems of high power 45 kW CO2 laser welding of hot steel specimens with their applications as welding characteristics of hot steel specimens that temperature is about 1000 degree C, have been examined. Using laser induced plasma as a secondary heat source, the penetration depth improves about 30% compared to that at room temperature. The bead width is also enlarged by 10%. The maximum depth is 38 mm at 1m/min welding velocity at 40 kW. A beam weaving method is adopted for further enlargement of bead width without degrading fusion efficiency. It is also effective for suppressing the bead depth deviation. Additionally, several new applications, for example, new type all-laser-welded honeycomb panels for high- speed civil transport, will be talked.

  1. High power diode pumped solid state laser development at Lawrence Livermore National Laboratory

    SciTech Connect

    Solarz, R.; Albrecht, G.; Hackel, L.

    1994-03-01

    The authors recent developments in high powered diode pumped solid state lasers at Lawrence Livermore National Laboratory. Over the past year the authors have made continued improvements to semiconductor pump array technology which includes the development of higher average power and lower cost pump modules. They report the performance of high power AlGaAs, InGaAs, and AlGaInP arrays. They also report on improvement to the integrated micro-optics designs in conjunction with lensing duct technology which gives rise to very high performance end pumping designs for solid state lasers which have major advantages which they detail. Substantial progress on beam quality improvements to near the diffraction limit at very high power have also been made and will be reported. They also will discuss recent experiments on high power non-linear materials for q-switches, harmonic converters, and parametric oscillators. Advances in diode pumped devices at LLNL which include tunable Cr:LiSrAlF{sub 6}, mid-IR Er:YAG, holmium based lasers and other developments will also be outlined. Concepts for delivering up to 30 kilowatts of average power from a DPSSL oscillator will be described.

  2. High power nd:glass laser for fusion applications.

    PubMed

    Soures, J; Kumpan, S; Hoose, J

    1974-09-01

    Experiments on laser-induced thermonuclear fusion require high brightness lasers capable of producing subnanosecond pulses with total energy content of several kilojoules. Of existing laser media, Nd:glass appears to be the best choice for meeting these criteria. In this paper we discuss the problems of designing a high power Nd:glass laser system. A detailed description of an operating two-beam system producing subnanosecond pulses with a maximum energy of 350 J per beam is presented, along with an extensive description of beam diagnostic techniques. A four beam version of this system became operational on 3 April 1974 and is now producing energies in excess of a kilojoule in subnanosecond pulses. PMID:20134633

  3. High-power diode lasers for optical communications applications

    NASA Technical Reports Server (NTRS)

    Carlin, D. B.; Goldstein, B.; Channin, D. J.

    1985-01-01

    High-power, single-mode, double-heterojunction AlGaAs diode lasers are being developed to meet source requirements for both fiber optic local area network and free space communications systems. An individual device, based on the channeled-substrate-planar (CSP) structure, has yielded single spatial and longitudinal mode outputs of up to 90 mW CW, and has maintained a single spatial mode to 150 mW CW. Phase-locked arrays of closely spaced index-guided lasers have been designed and fabricated with the aim of multiplying the outputs of the individual devices to even higher power levels in a stable, single-lobe, anastigmatic beam. The optical modes of the lasers in such arrays can couple together in such a way that they appear to be emanating from a single source, and can therefore be efficiently coupled into optical communications systems. This paper will review the state of high-power laser technology and discuss the communication system implications of these devices.

  4. Safety approaches for high power modular laser operation

    NASA Astrophysics Data System (ADS)

    Handren, R. T.

    1993-03-01

    Approximately 20 years ago, a program was initiated at the Lawrence Livermore National Laboratory (LLNL) to study the feasibility of using lasers to separate isotopes of uranium and other materials. Of particular interest was the development of a uranium enrichment method for the production of commercial nuclear power reactor fuel to replace current more expensive methods. The Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) Program progressed to the point where a plant-scale facility to demonstrate commercial feasibility was built and is being tested. The U-AVLIS Program uses copper vapor lasers which pump frequency selective dye lasers to photoionize uranium vapor produced by an electron beam. The selectively ionized isotopes are electrostatically collected. The copper lasers are arranged in oscillator/amplifier chains. The current configuration consists of 12 chains, each with a nominal output of 800 W for a system output in excess of 9 kW. The system requirements are for continuous operation (24 h a day, 7 days a week) and high availability. To meet these requirements, the lasers are designed in a modular form allowing for rapid change-out of the lasers requiring maintenance. Since beginning operation in early 1985, the copper lasers have accumulated over 2 million unit hours at a greater than 90% availability. The dye laser system provides approximately 2.5 kW average power in the visible wavelength range. This large-scale laser system has many safety considerations, including high-power laser beams, high voltage, and large quantities (approximately 3000 gal) of ethanol dye solutions. The Laboratory's safety policy requires that safety controls be designed into any process, equipment, or apparatus in the form of engineering controls. Administrative controls further reduce the risk to an acceptable level. Selected examples of engineering and administrative controls currently being used in the U-AVLIS Program are described.

  5. High power free-electron laser concepts and problems

    SciTech Connect

    Goldstein, J.C.

    1995-03-01

    Free-electron lasers (FELs) have long been thought to offer the potential of high average power operation. That potential exists because of several unique properties of FELs, such as the removal of ``waste heat`` at the velocity of light, the ``laser medium`` (the electron beam) is impervious to damage by very high optical intensitites, and the technology of generating very high average power relativistic electron beams. In particular, if one can build a laser with a power extraction efficiency 11 which is driven by an electron beam of average Power P{sub EB}, one expects a laser output power of P{sub L} = {eta} P{sub EB}. One approach to FEL devices with large values of {eta} (in excess of 10 %) is to use a ``tapered`` (or nonuniform) wiggler. This approach was followed at several laboratories during the FEL development Program for the Strategic Defense Initiative (SDI) project. In this paper, we review some concepts and technical requirements for high-power tapered-wiggler FELs driven by radio-frequency linear accelerators (rf-linacs) which were developed during the SDI project. Contributions from three quite different technologies - rf-accelerators, optics, and magnets - are needed to construct and operate an FEL oscillator. The particular requirements on these technologies for a high-power FEL were far beyond the state of the art in those areas when the SDI project started, so significant advances had to be made before a working device could be constructed. Many of those requirements were not clearly understood when the project started, but were developed during the course of the experimental and theoretical research for the project. This information can be useful in planning future high-power FEL projects.

  6. High power Nd:YAG spinning disk laser.

    PubMed

    Ongstad, Andrew P; Guy, Matthew; Chavez, Joeseph R

    2016-01-11

    We report on a high power Nd:YAG spinning disk laser. The eight cm diameter disk generated 200 W CW output with 323 W of absorbed pump in a near diffraction-limited beam. The power conversion efficiency was 64%. The pulsed result, 5 ms pulses at 10 Hz PRF, was nearly identical to the CW result indicating good thermal management. Rotated at 1200-1800 RPM with He impingement cooling the disk temperature increased by only 17 °C reaching a maximum temperature of ~31 °C. The thermal dissipation per unit of output power was 0.61 watt of heat generated per watt of laser output, which is below the typical range of 0.8-1.1 for 808 nm diode pumped Nd:YAG lasers. PMID:26832242

  7. Materials processing with a high power diode laser

    SciTech Connect

    Li, L.; Lawrence, J.; Spencer, J.T.

    1996-12-31

    This paper reports on work exploring the feasibility of a range of materials processing applications using a Diomed 60W diode laser delivered through a 600{mu}m diameter optical fibre to a 3 axis CNC workstation. The applications studied include: marking/engraving natural stones (marble and granite), marking ceramic tiles, sealing tile grouts, cutting and marking glass, marking/engraving wood, stripping paint and lacquer, and welding metallic wires. The study shows that even at the present limited power level of diode lasers, many materials processing applications can be accomplished with satisfactory results. Through the study an initial understanding of interaction of high power diode laser (HPDL) beam with various materials has been gained. Also, within the paper basic beam characteristics, and current R&D activities in HPDL technology and materials processing applications are reviewed.

  8. High-Power Fiber Lasers Using Photonic Band Gap Materials

    NASA Technical Reports Server (NTRS)

    DiDomenico, Leo; Dowling, Jonathan

    2005-01-01

    High-power fiber lasers (HPFLs) would be made from photonic band gap (PBG) materials, according to the proposal. Such lasers would be scalable in the sense that a large number of fiber lasers could be arranged in an array or bundle and then operated in phase-locked condition to generate a superposition and highly directed high-power laser beam. It has been estimated that an average power level as high as 1,000 W per fiber could be achieved in such an array. Examples of potential applications for the proposed single-fiber lasers include welding and laser surgery. Additionally, the bundled fibers have applications in beaming power through free space for autonomous vehicles, laser weapons, free-space communications, and inducing photochemical reactions in large-scale industrial processes. The proposal has been inspired in part by recent improvements in the capabilities of single-mode fiber amplifiers and lasers to produce continuous high-power radiation. In particular, it has been found that the average output power of a single strand of a fiber laser can be increased by suitably changing the doping profile of active ions in its gain medium to optimize the spatial overlap of the electromagnetic field with the distribution of active ions. Such optimization minimizes pump power losses and increases the gain in the fiber laser system. The proposal would expand the basic concept of this type of optimization to incorporate exploitation of the properties (including, in some cases, nonlinearities) of PBG materials to obtain power levels and efficiencies higher than are now possible. Another element of the proposal is to enable pumping by concentrated sunlight. Somewhat more specifically, the proposal calls for exploitation of the properties of PBG materials to overcome a number of stubborn adverse phenomena that have impeded prior efforts to perfect HPFLs. The most relevant of those phenomena is amplified spontaneous emission (ASE), which causes saturation of gain and power

  9. High power industrial picosecond laser from IR to UV

    NASA Astrophysics Data System (ADS)

    Saby, Julien; Sangla, Damien; Pierrot, Simonette; Deslandes, Pierre; Salin, François

    2013-02-01

    Many industrial applications such as glass cutting, ceramic micro-machining or photovoltaic processes require high average and high peak power Picosecond pulses. The main limitation for the expansion of the picosecond market is the cost of high power picosecond laser sources, which is due to the complexity of the architecture used for picosecond pulse amplification, and the difficulty to keep an excellent beam quality at high average power. Amplification with fibers is a good technology to achieve high power in picosecond regime but, because of its tight confinement over long distances, light undergoes dramatic non linearities while propagating in fibers. One way to avoid strong non linearities is to increase fiber's mode area. Nineteen missing holes fibers offering core diameter larger than 80μm have been used over the past few years [1-3] but it has been shown that mode instabilities occur at approximately 100W average output power in these fibers [4]. Recently a new fiber design has been introduced, in which HOMs are delocalized from the core to the clad, preventing from HOMs amplification [5]. In these so-called Large Pitch Fibers, threshold for mode instabilities is increased to 294W offering robust single-mode operation below this power level [6]. We have demonstrated a high power-high efficiency industrial picosecond source using single-mode Large Pitch rod-type fibers doped with Ytterbium. Large Pitch Rod type fibers can offer a unique combination of single-mode output with a very large mode area from 40 μm up to 100μm and very high gain. This enables to directly amplify a low power-low energy Mode Locked Fiber laser with a simple amplification architecture, achieving very high power together with singlemode output independent of power level or repetition rate.

  10. Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

    NASA Technical Reports Server (NTRS)

    Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

    2005-01-01

    Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

  11. Theoretical and experimental analysis of high-power frequency-stabilized semiconductor master oscillator power-amplifier system.

    PubMed

    Ji, Encai; Liu, Qiang; Nie, Mingming; Fu, Xing; Gong, Mali

    2016-04-10

    We present a compact high-power 780 nm frequency-stabilized diode laser with a power of as high as 2.825 W, corresponding to an estimated overall efficiency of 38.5%. The tapered amplifier (TPA) gain was about 24.5 dB, which was basically consistent with the simulation results. The beam quality factor was M2<1.72. The core feature of the system was stabilizing the frequency of the narrowband semiconductor TPA system with the matured saturated absorption spectrum technique. The laser frequency was stabilized against mode hops for a period of >4200  s with a frequency fluctuation around 6.7×10-10 within 1 s of the observation period, and the linewidth was no more than 0.95 MHz. The laser performance indicates that the current frequency-stabilized semiconductor laser has great potential in certain conditions that require several watts of output power. PMID:27139853

  12. Broad interband semiconductor laser diodes

    NASA Astrophysics Data System (ADS)

    Tan, Chee Loon

    A semiconductor laser is a diode device that emits light via stimulated emission. Conventionally, light emitted from a semiconductor laser is spatially coherent or narrowband. The fundamental mechanism of stimulated emission process in general leads only to a single wavelength emission. However, there are some lasers emit light with a broad spectrum or different distinct wavelength subjected to various operating conditions such as external grating configuration with semiconductor laser, diode-pumped self-Q-switch fiber laser, ultrashort pulse excitation, photonic crystal fiber, ultrabroadband solid-state lasers, semiconductor optical amplifier-based multiwavelength tunable fiber lasers, nonlinear crystal, broadband semiconductor laser etc. This type of broadband laser is vital in many practical applications such as optical telecommunications, spectroscopy measurement, imaging technology, etc. Recently, an ultra-broadband semiconductor laser that utilizes intersubband optical transitions via quantum cascade configuration has been realized. Laser action with a Fabry-Perot spectrum covering all wavelengths from 6 to 8 microm simultaneously is demonstrated with this approach. More recently, broadband emission results from interband optical transitions via quantum-dot/dash nanostructures have been demonstrated in a simple p-i-n laser diode structure. To date, this latest approach offers the simplest design by proper engineering of quantized energy states as well as utilizing the high inhomogeneity of the dot/dash nanostructures, which is inherent from self-assembled growth technology. In this dissertation, modeling of semiconductor InGaAs/GaAs quantum-dot broadband laser utilizing the properties of inhomogeneous and homogeneous broadening effects on lasing spectral will be discussed, followed by a detail analysis of another type of broad interband semiconductor laser, which is InAs/InGaAlAs quantum-dash broadband laser. Based on the device characterization results

  13. High-power single-frequency fiber lasers

    NASA Astrophysics Data System (ADS)

    Guan, Weihua

    Single frequency laser sources are desired in many applications. Various architectures for achieving high power single frequency fiber laser outputs have been investigated and demonstrated. Axial gain apodization can affect the lasing threshold and spectral modal discrimination of DFB lasers. Modeling results show that if properly tailored, the lasing threshold can be reduced by 21% without sacrificing modal discrimination, while simultaneously increasing the differential output power between both ends of the laser. A dual-frequency 2 cm silica fiber laser with a wavelength spacing of 0.3 nm was demonstrated using a polarization maintaining (PM) fiber Bragg grating (FBG) reflector. The output power reached 43 mW with the optical signal to noise ratio (OSNR) greater than 60 dB. By thermally tuning the overlap between the spectra of PM FBG and SM FBG, a single polarisation, single frequency fibre laser was also demonstrated with an output power of 35 mW. From the dual frequency fiber laser, dual frequency switching was achieved by tuning the pump power of the laser. The dual frequency switching was generated by the thermal effects of the absorbed pump in the ytterbium doped fiber. Suppression and elimination of self pulsing in a watt level, dual clad ytterbium doped fiber laser was demonstrated. Self pulsations are caused by the dynamic interaction between the photon population and the population inversion. The addition of a long section of passive fiber in the laser cavity makes the gain recovery faster than the self pulsation dynamics, allowing only stable continuous wave lasing. A single frequency, hybrid Brillouin/ytterbium fiber laser was demonstrated in a 12 m ring cavity The output power reached 40 mW with an OSNR greater than 50 dB. To scale up the output power, a dual clad hybrid Brillouin/ytterbium fiber laser was studied. A numerical model including third order SBS was used to calculate the laser power performance. Simulation shows that 5 W single

  14. High-power diode lasers in spray process diagnostics

    NASA Astrophysics Data System (ADS)

    Larjo, Jussi

    2005-03-01

    Spray processes are commonly employed in many kinds of surface treatment applications, most prominently in medical, material processing and manufacturing industries. While spraying is a well established technology, we still lack complete understanding of all interactions within a given spray process. This is because the physical models of many subprocesses, like turbulent gas flow, particle formation and gas-particle interaction, are limited and often provide only qualitative predictions on the real process. Imaging measurements are essential in gaining better understanding of a spray process. They offer a way to measure properties of both the complete spray plume and individual droplets. A spray analysis system typically requires a high-power stroboscopic light source; Xe flashlamps and Q-switched solid state lasers have been the most common choice until recently. The development of high-power diode lasers has provided a versatile, low-cost and easy to use light source for the analysis of spray processes. We present a real-time diode laser based imaging system to measure droplet density, size and velocity distributions in a spray, together with the spray plume geometry.

  15. High power, high efficiency diode pumped Raman fiber laser

    NASA Astrophysics Data System (ADS)

    Glick, Yaakov; Fromzel, Viktor; Zhang, Jun; Dahan, Asaf; Ter-Gabrielyan, Nikolay; Pattnaik, Radha K.; Dubinskii, Mark

    2016-06-01

    We demonstrate a high power high efficiency Raman fiber laser pumped directly by a laser diode module at 976 nm. 80 Watts of CW power were obtained at a wavelength of 1020 nm with an optical-to-optical efficiency of 53%. When working quasi-CW, at a duty cycle of 30%, 85 W of peak power was produced with an efficiency of 60%. A commercial graded-index (GRIN) core fiber acts as the Raman fiber in a power oscillator configuration, which includes spectral selection to prevent generation of the 2nd Stokes. In addition, significant brightness enhancement of the pump beam is attained due to the Raman gain distribution profile in the GRIN fiber. To the best of our knowledge, this is the highest power Raman fiber laser directly pumped by laser diodes, which also exhibits a record efficiency for such a laser. In addition, it is the highest power Raman fiber laser (regardless of pumping source) demonstrated based on a GRIN fiber.

  16. High power rapidly tunable system for laser cooling.

    PubMed

    Valenzuela, V M; Hernández, L; Gomez, E

    2012-01-01

    We present a laser configuration capable of fast frequency changes with a high power output and a large tuning range. The system integrates frequency tuning with an acousto-optic modulator with a double pass tapered amplifier. A compensation circuit keeps the seed power constant and prevents damage to the amplifier. A single mode fiber decouples the modulation and amplification sections and keeps the alignment fixed. The small power required to saturate the amplifier makes the system very reliable. We use the system to obtain a dipole trap that we image using a beam derived from the same configuration. PMID:22299990

  17. Tunable Dual Semiconductor Laser

    NASA Technical Reports Server (NTRS)

    Mukai, Seiji; Kapon, Eli; Katz, Joseph; Margalit, Shlomo; Yariv, Amnon

    1987-01-01

    Parallel lasers interact in shared space to alter output wavelength. New device consists of two stripe lasers in aluminum gallium arsenide chip. Parallel stripes close enough so light from lower laser coupled into upper laser and vice versa. Lasers operated by low-duty-cycle current pulses. Lasing threshold of each about 100 mA. Currents controlled independently. Useful in optical communications systems employing wavelength-division multiplexing.

  18. Control system for high power laser drilling workover and completion unit

    DOEpatents

    Zediker, Mark S; Makki, Siamak; Faircloth, Brian O; DeWitt, Ronald A; Allen, Erik C; Underwood, Lance D

    2015-05-12

    A control and monitoring system controls and monitors a high power laser system for performing high power laser operations. The control and monitoring system is configured to perform high power laser operation on, and in, remote and difficult to access locations.

  19. High Power Diode Pumped 1.06 Micron Solid State Laser

    NASA Astrophysics Data System (ADS)

    Arvind, Mukundarajan A.; Martin, Dan W.; Osterhage, R. J.

    1989-07-01

    Diode pumped solid state lasers have been attracting significant interest in recent years due to advances in high power semiconductor diode lasers. They offer considerable advantages over flashlamp pumped lasers such as compact size, high efficiency, lower heat dissipation and solid-state reliability. In this paper, we report on the results of a Nd:YAG laser, transverse pumped by diode laser arrays. We have measured an output power of 1.14 Watts at 1.06 microns with a laser diode power consumption of 40 Watts. This represents the highest reported electrical efficiency (2.85%) for a transverse pumped, CW, TEM00 laser. The diode arrays were selected and tuned to emit at wavelengths close to the peak neodymium absorption line at 0.808 microns with Peltier coolers. Two diode laser bars side pumped a 20 mm long, 1.5 mm diameter Nd:YAG laser rod. The optical cavity is 13.8 cm long consisting of a high reflectivity mirror and a 95% reflectivity output mirror. The output beam divergence was measured to be near diffraction limited at 1.4 milliradians, and the beam diameter was 1 mm.

  20. High-power IR laser in SMT package

    NASA Astrophysics Data System (ADS)

    Pritsch, Benedikt; Behringer, Martin; Arzberger, Markus; Wiesner, Christoph; Fehse, Robin; Heerlein, Jörg; Maric, Josip; Giziewicz, Wojciech

    2009-02-01

    Laser dies in an optical power range of 1-3 Watts are widely assembled in popular TO- packages. TO-packages suffer from high thermal resistance and limited output power. Bad thermal contact between circuit boards and TO-devices can cause overheating of laser chips, significantly reducing the operating life time. We developed a compact high heat-load SMT package for an optical power up to 7 Watts in CW operation with good life time results. The new package for high power laser chips combines highly efficient heat dissipation with Surface-mount technology. A Direct-Bonded-Copper (DBC) substrate acts as a base plate for the laser chip and heat sink. The attached frame is used for electrical contacting and acts as beam reflector where the laser light is reflected at a 45° mirror. In the application the DBC base plate of the SMT-Laser is directly soldered to a Metal-Core-PCB by reflow soldering. The overall thermal resistance from laser chip to the bottom of a MC-PCB was measured as low as 2.5 K/W. The device placement process can be operated by modern high-speed mounting equipment. The direct link between device and MC-PCB allows CW laser operation up to 6-7 watts at wavelengths of 808nm to 940nm without facing any overheating symptom like thermal roll over. The device is suitable for CW and QCW operation. In pulsed operation short rise and fall times of <2ns have been demonstrated. New application fields like infrared illumination for sensing purposes in the automotive industry and 3D imaging systems could be opened by this new technology.

  1. High-power laser diodes based on InGaAsP alloys

    NASA Astrophysics Data System (ADS)

    Razeghi, Manijeh

    1994-06-01

    HIGH-POWER, high-coherence solid-state lasers, based on dielectric materials such as ruby or Nd:YAG (yttrium aluminium garnet), have many civilian and military applications. The active media in these lasers are insulating, and must therefore be excited (or `pumped') by optical, rather than electrical, means. Conventional gas-discharge lamps can be used as the pumping source, but semiconductor diode lasers are more efficient, as their wavelength can be tailored to match the absorption properties of the lasing material. Semiconducting AlGaAs alloys are widely used for this purpose1, 2, but oxidation of the aluminium and the spreading of defects during device operation limit the lifetime of the diodes3, and hence the reliability of the system as a whole. Aluminium-free InGaAsP compounds, on the other hand, do not have these lifetime-limiting properties4-8. We report here the fabrication of high-power lasers based on InGaAsP (lattice-matched to GaAs substrates), which operate over the same wavelength range as conventional AlGaAs laser diodes and show significantly improved reliability. The other optical and electrical properties of these diodes are either comparable or superior to those of the AlGaAs system.

  2. High power narrowband 589 nm frequency doubled fibre laser source.

    PubMed

    Taylor, Luke; Feng, Yan; Calia, Domenico Bonaccini

    2009-08-17

    We demonstrate high-power high-efficiency cavity-enhanced second harmonic generation of an in-house built ultra-high spectral density (SBS-suppressed) 1178 nm narrowband Raman fibre amplifier. Up to 14.5 W 589 nm CW emission is achieved with linewidth Delta nu(589) < 7 MHz in a diffraction-limited beam, with peak external conversion efficiency of 86%. The inherently high spectral and spatial qualities of the 589 nm source are particularly suited to both spectroscopic and Laser Guide Star applications, given the seed laser can be easily frequency-locked to the Na D(2a) emission line. Further, we expect the technology to be extendable, at similar or higher powers, to wavelengths limited only by the seed-pump-pair availability. PMID:19687946

  3. Solutions for stability and astigmatism in high power laser resonators

    NASA Astrophysics Data System (ADS)

    Narro, R.; Arronte, M.; de Posada, E.; Ponce, L.; Rodríguez, E.

    2009-09-01

    A method is proposed for the design of fundamental mode high power resonators, with joined stability zones. A parameter is created which gives the minimum length a laser resonator should have while having at the same time the broadest stabilities zones. For multimode and large mode volume resonators, a configuration is introduced for maximizing the laser overall efficiency due to the compensation of the astigmatism induced by the flash lamp pumping heating. The later configuration proposes a dual-active medium resonator, with 90 degree rotation around the optical axis between the astigmatic thermal lenses of the mediums. The reliability of this configuration is corroborated experimentally using a Nd:YAG dual-active medium resonator. It is found that in the pumping power range where the astigmatism compensation is possible, the overall efficiency is constant, even when increasing the excitation power with the consequent increase of the thermal lens dioptric power.

  4. High power metallic halide laser. [amplifying a copper chloride laser

    NASA Technical Reports Server (NTRS)

    Pivirotto, T. J. (Inventor)

    1982-01-01

    A laser amplification system is disclosed whereby a metallic halide vapor such as copper chloride is caused to flow through a laser amplifier and a heat exchanger in a closed loop system so that the flow rate is altered to control the temperature rise across the length of the laser amplifier. The copper atoms within the laser amplifier should not exceed a temperature of 3000 K, so that the number of copper atoms in the metastable state will not be high enough to prevent amplification in the amplifier. A molecular dissociation apparatus is provided at the input to the laser amplifier for dissociating the copper chloride into copper atoms and ions and chlorine atoms and ions. The dissociation apparatus includes a hollow cathode tube and an annular ring spaced apart from the tube end. A voltage differential is applied between the annular ring and the hollow cathode tube so that as the copper chloride flows through, it is dissociated into copper and chlorine ions and atoms.

  5. Robust focusing optics for high-power laser welding

    NASA Astrophysics Data System (ADS)

    McAllister, Blake

    2014-02-01

    As available power levels from both fiber and disc lasers rapidly increase, so does the need for more robust beam delivery solutions. Traditional transmissive optics for 1 micron lasers have proven to be problematic in the presence of higher power densities and are more susceptible to focal shift. A new, fully-reflective, optical solution has been developed using mirrors rather than lenses and windows to achieve the required stable focal spot, while still protecting the delicate fiber end. This patent-approved beam focusing solution, referred to as high power reflective focusing optic (HPRFO), involves specialty mirrors and a flowing gas orifice that prevents ingress of contaminants into the optically sensitive region of the assembly. These mirrors also provide a unique solution for increasing the distance between the sensitive optics and the contamination-filled region at the work, without sacrificing spot size. Longer focal lengths and lower power densities on large mass, water-cooled, copper mirrors deliver the robustness needed at increasingly high power levels. The HPRFO exhibits excellent beam quality and minimal focal shift at a fraction of commercially available optics, and has demonstrated consistent reliability on applications requiring 15 kW with prolonged beam-on times.

  6. Recent advances in high-power tunable lasers (UV, visible, and near IR)

    SciTech Connect

    Smiley, V.N.

    1981-05-01

    A review of the current technology of high-power tunable lasers is presented with the emphasis on dye lasers. Among the topics covered are color center lasers, excimer lasers, picosecond techniques, and nonlinear coherent sources. (AIP)

  7. PCF based high power narrow line width pulsed fiber laser

    NASA Astrophysics Data System (ADS)

    Chen, H.; Yan, P.; Xiao, Q.; Wang, Y.; Gong, M.

    2012-09-01

    Based on semiconductor diode seeded multi-stage cascaded fiber amplifiers, we have obtained 88-W average power of a 1063-nm laser with high repetition rate of up to 1.5 MHz and a constant 2-ns pulse duration. No stimulated Brillouin scattering pulse or optical damage occurred although the maximum pulse peak power has exceeded 112 kW. The output laser exhibits excellent beam quality (M2x = 1.24 and M2y = 1.18), associated with a spectral line width as narrow as 0.065 nm (FWHM). Additionally, we demonstrate high polarization extinction ratio of 18.4 dB and good pulse stabilities superior to 1.6 % (RMS).

  8. High power KrF laser development at Los Alamos

    SciTech Connect

    McDonald, T.; Cartwright, D.; Fenstermacher, C.; Figueira, J.; Goldstone, P.; Harris, D.; Mead, W.; Rosocha, L.

    1988-01-01

    The objective of the high power laser development program at Los Alamos is to appraise the potential of the KrF laser as a driver for inertial confinement fusion (ICF), ultimately at energy levels that will produce high target gain (gain of order 100). A KrF laser system prototype, the 10-kJ Aurora laser, which is nearing initial system operation, will serve as a feasibility demonstration of KrF technology and system design concepts appropriate to large scale ICF driver systems. The issues of affordable cost, which is a major concern for all ICF drivers now under development, and technology scaling are also being examined. It is found that, through technology advances and component cost reductions, the potential exists for a KrF driver to achieve a cost goal in the neighborhood of $100 per joule. The authors suggest that the next step toward a multimegajoule laboratory microfusion facility (LMF) is an ''Intermediate Driver'' facility in the few hundred kilojoule to one megajoule range, which will help verify the scaling of driver technology and cost to an LMF size. An Intermediate Driver facility would also increase the confidence in the estimates of energy needed for an LMF and would reduce the risk in target performance. 5 refs., 4 figs., 1 tab.

  9. High power continuous-wave titanium:sapphire laser

    DOEpatents

    Erbert, G.V.; Bass, I.L.; Hackel, R.P.; Jenkins, S.L.; Kanz, V.K.; Paisner, J.A.

    1993-09-21

    A high-power continuous-wave laser resonator is provided, wherein first, second, third, fourth, fifth and sixth mirrors form a double-Z optical cavity. A first Ti:sapphire rod is disposed between the second and third mirrors and at the mid-point of the length of the optical cavity, and a second Ti:sapphire rod is disposed between the fourth and fifth mirrors at a quarter-length point in the optical cavity. Each Ti:sapphire rod is pumped by two counter-propagating pump beams from a pair of argon-ion lasers. For narrow band operation, a 3-plate birefringent filter and an etalon are disposed in the optical cavity so that the spectral output of the laser consists of 5 adjacent cavity modes. For increased power, seventy and eighth mirrors are disposed between the first and second mirrors to form a triple-Z optical cavity. A third Ti:sapphire rod is disposed between the seventh and eighth mirrors at the other quarter-length point in the optical cavity, and is pumped by two counter-propagating pump beams from a third pair of argon-ion lasers. 5 figures.

  10. High power continuous-wave titanium:sapphire laser

    DOEpatents

    Erbert, Gaylen V.; Bass, Isaac L.; Hackel, Richard P.; Jenkins, Sherman L.; Kanz, Vernon K.; Paisner, Jeffrey A.

    1993-01-01

    A high-power continuous-wave laser resonator (10) is provided, wherein first, second, third, fourth, fifth and sixth mirrors (11-16) form a double-Z optical cavity. A first Ti:Sapphire rod (17) is disposed between the second and third mirrors (12,13) and at the mid-point of the length of the optical cavity, and a second Ti:Sapphire rod (18) is disposed between the fourth and fifth mirrors (14,15) at a quarter-length point in the optical cavity. Each Ti:Sapphire rod (17,18) is pumped by two counter-propagating pump beams from a pair of argon-ion lasers (21-22, 23-24). For narrow band operation, a 3-plate birefringent filter (36) and an etalon (37) are disposed in the optical cavity so that the spectral output of the laser consists of 5 adjacent cavity modes. For increased power, seventy and eighth mirrors (101, 192) are disposed between the first and second mirrors (11, 12) to form a triple-Z optical cavity. A third Ti:Sapphire rod (103) is disposed between the seventh and eighth mirrors (101, 102) at the other quarter-length point in the optical cavity, and is pumped by two counter-propagating pump beams from a third pair of argon-ion lasers (104, 105).

  11. High power tandem-pumped thulium-doped fiber laser.

    PubMed

    Wang, Yao; Yang, Jianlong; Huang, Chongyuan; Luo, Yongfeng; Wang, Shiwei; Tang, Yulong; Xu, Jianqiu

    2015-02-01

    We propose a cascaded tandem pumping technique and show its high power and high efficient operation in the 2-μm wavelength region, opening up a new way to scale the output power of the 2-μm fiber laser to new levels (e.g. 10 kW). Using a 1942 nm Tm(3+) fiber laser as the pump source with the co- (counter-) propagating configuration, the 2020 nm Tm(3+) fiber laser generates 34.68 W (35.15W) of output power with 84.4% (86.3%) optical-to-optical efficiency and 91.7% (92.4%) slope efficiency, with respect to launched pump power. It provides the highest slope efficiency reported for 2-μm Tm(3+)-doped fiber lasers, and the highest output power for all-fiber tandem-pumped 2-μm fiber oscillators. This system fulfills the complete structure of the proposed cascaded tandem pumping technique in the 2-μm wavelength region (~1900 nm → ~1940 nm → ~2020 nm). Numerical analysis is also carried out to show the power scaling capability and efficiency of the cascaded tandem pumping technique. PMID:25836159

  12. Optical metrology devices for high-power laser large optics

    NASA Astrophysics Data System (ADS)

    Daurios, J.; Bouillet, S.; Gaborit, G.; Poncetta, J. C.

    2007-06-01

    High power laser systems such as the LMJ laser or the LIL laser, its prototype, require large optical components with very strict and various specifications. Technologies used for the fabrication of these components are now usually compatible of such specifications, but need the implementation at the providers' sites of different kind of metrology like interferometry, photometry, surface inspection, etc., systematically performed on the components. So, during the production for the LIL and now for the LMJ, CEA has also equipped itself with a wide range of specific metrology devices used to verify the effective quality of these large optics. These various systems are now used to characterize and validate the LMJ vendors' processes or to perform specific controls dedicated to analyzes which are going further than the simple "quality control" of the component (mechanical mount effect, environment effect, ageing effect,...). After a short introduction on the LMJ laser and corresponding optical specifications for components, we will focus on different metrology devices concerning interferometry and photometry measurements or surface inspection. These systems are individually illustrated here by the mean of different results obtained during controls done in the last few years.

  13. Semiconductor processing with excimer lasers

    SciTech Connect

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

    1983-01-01

    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications.

  14. Numerical simulations of novel high-power high-brightness diode laser structures

    NASA Astrophysics Data System (ADS)

    Boucke, Konstantin; Rogg, Joseph; Kelemen, Marc T.; Poprawe, Reinhart; Weimann, Guenter

    2001-07-01

    One of the key topics in today's semiconductor laser development activities is to increase the brightness of high-power diode lasers. Although structures showing an increased brightness have been developed specific draw-backs of these structures lead to a still strong demand for investigation of alternative concepts. Especially for the investigation of basically novel structures easy-to-use and fast simulation tools are essential to avoid unnecessary, cost and time consuming experiments. A diode laser simulation tool based on finite difference representations of the Helmholtz equation in 'wide-angle' approximation and the carrier diffusion equation has been developed. An optimized numerical algorithm leads to short execution times of a few seconds per resonator round-trip on a standard PC. After each round-trip characteristics like optical output power, beam profile and beam parameters are calculated. A graphical user interface allows online monitoring of the simulation results. The simulation tool is used to investigate a novel high-power, high-brightness diode laser structure, the so-called 'Z-Structure'. In this structure an increased brightness is achieved by reducing the divergency angle of the beam by angular filtering: The round trip path of the beam is two times folded using internal total reflection at surfaces defined by a small index step in the semiconductor material, forming a stretched 'Z'. The sharp decrease of the reflectivity for angles of incidence above the angle of total reflection leads to a narrowing of the angular spectrum of the beam. The simulations of the 'Z-Structure' indicate an increase of the beam quality by a factor of five to ten compared to standard broad-area lasers.

  15. The NASA high power carbon dioxide laser: A versatile tool for laser applications

    NASA Technical Reports Server (NTRS)

    Lancashire, R. B.; Alger, D. L.; Manista, E. J.; Slaby, J. G.; Dunning, J. W.; Stubbs, R. M.

    1976-01-01

    A closed-cycle, continuous wave, carbon dioxide high power laser has been designed and fabricated to support research for the identification and evaluation of possible high power laser applications. The device is designed to generate up to 70 kW of laser power in annular shape beams from 1 to 9 cm in diameter. Electric discharge, either self sustained or electron beam sustained, is used for excitation. This laser facility provides a versatile tool on which research can be performed to advance the state-of-the-art technology of high power CO2 lasers in such areas as electric excitation, laser chemistry, and quality of output beams. The facility provides a well defined, continuous wave beam for various application experiments, such as propulsion, power conversion, and materials processing.

  16. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

    NASA Astrophysics Data System (ADS)

    Calvez, S.; Adams, M. J.

    2012-09-01

    achievements in the June 1987 Special Issue of IEEE Journal of Quantum Electronics. The Millennium Issue of IEEE Journal of Selected Topics in Quantum Electronics presented a further set of articles on historical aspects of the subject as well as a 'snapshot' of current research in June 2000. It is not the intention here to duplicate any of this historical material that is already available, but rather to complement it with personal recollections from researchers who were involved in laser development in the USA, France, Russia and the UK. Hence, in addition to fascinating accounts of the discovery of the theoretical condition for stimulated emission from semiconductors and of the pioneering work at IBM, there are two complementary views of the laser research at the Lebedev Institute, and personal insights into the developments at STL and at Bell Laboratories. These are followed by an account of the scientific and technological connections between the early pioneering breakthroughs and the commercialisation of semiconductor laser products. Turning to the papers from today's researchers, there is coverage of many of the current 'hot' topics including quantum cascade lasers, mid-infrared lasers, high-power lasers, the exciting developments in understanding and exploiting the nonlinear dynamics of lasers, and photonic integrated circuits with extremely high communication data capacity, as well as reports of recent progress on laser materials such as dilute nitrides and bismides, photonic crystals, quantum dots and organic semiconductors. Thanks are due to Jarlath McKenna for sterling support from IOP Publishing and to Peter Blood for instigating this Special Issue and inviting us to serve as Guest Editors.

  17. High efficiency high power blue laser by resonant doubling in PPKTP

    NASA Astrophysics Data System (ADS)

    Danekar, Koustubh

    I developed a high power blue laser for use in scientific and technical applications (e.g., precision spectroscopy, semiconductor inspection, flow cytometry, etc.). It is linearly polarized, single longitudinal and single transverse mode, and a convenient fiber coupled continuous wave (cw) laser source. My technique employs external cavity frequency doubling and provides better power and beam quality than commercially available blue diode lasers. I use a fiber Bragg grating (FBG) stabilized infrared (IR) semiconductor laser source with a polarization maintaining (PM) fiber coupled output. Using a custom made optical and mechanical design this output is coupled with a mode matching efficiency of 96% into the doubling cavity. With this carefully designed and optimized cavity, measurements were carried out at various fundamental input powers. A net efficiency of 81% with an output power of 680 mW at 486 nm was obtained using 840 mW of IR input. Also I report an 87.5% net efficiency in coupling of blue light from servo locked cavity into a single mode PM fiber. Thus I have demonstrated a total fiber to fiber efficiency of 71% can be achieved in our approach using periodically poled potassium titanyl phosphate (PPKTP). To obtain these results, all losses in the system were carefully studied and minimized.

  18. High power-efficiency terahertz quantum cascade laser

    NASA Astrophysics Data System (ADS)

    Li, Yuan-Yuan; Liu, Jun-Qi; Liu, Feng-Qi; Zhang, Jin-Chuan; Zhai, Shen-Qiang; Zhuo, Ning; Wang, Li-Jun; Liu, Shu-Man; Wang, Zhan-Guo

    2016-08-01

    We demonstrate continuous-wave (CW) high power-efficiency terahertz quantum cascade laser based on semi-insulating surface-plasmon waveguide with epitaxial-side down (Epi-down) mounting process. The performance of the device is analyzed in detail. The laser emits at a frequency of ∼ 3.27 THz and has a maximum CW operating temperature of ∼ 70 K. The peak output powers are 177 mW in pulsed mode and 149 mW in CW mode at 10 K for 130-μm-wide Epi-down mounted lasers. The record wall-plug efficiencies in direct measurement are 2.26% and 2.05% in pulsed and CW mode, respectively. Project supported by the National Basic Research Program of China (Grant Nos. 2014CB339803 and 2013CB632801), the Special-funded Program on National Key Scientific Instruments and Equipment Development, China (Grant No. 2011YQ13001802-04), and the National Natural Science Foundation of China (Grant No. 61376051).

  19. High-power quantum-dot tapered tunable external-cavity lasers based on chirped and unchirped structures.

    PubMed

    Haggett, Stephanie; Krakowski, Michel; Montrosset, Ivo; Cataluna, Maria Ana

    2014-09-22

    A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor optical amplifier at its core is presented, enabling a record output power for a broadly tunable semiconductor laser source in the 1.2 - 1.3 µm spectral region. Two distinct optical amplifiers are investigated, using either chirped or unchirped quantum-dot structures, and their merits are compared, considering the combination of tunability and high output power generation. At 1230 nm, the chirped quantum-dot laser achieved a maximum power of 0.62 W and demonstrated nearly 100-nm tunability. The unchirped laser enabled a tunability range of 32 nm and at 1254 nm generated a maximum power of 0.97 W, representing a 22-fold increase in output power compared with similar narrow-ridge external-cavity lasers at the same current density. PMID:25321756

  20. Liquid metal heat sink for high-power laser diodes

    NASA Astrophysics Data System (ADS)

    Vetrovec, John; Litt, Amardeep S.; Copeland, Drew A.; Junghans, Jeremy; Durkee, Roger

    2013-02-01

    We report on the development of a novel, ultra-low thermal resistance active heat sink (AHS) for thermal management of high-power laser diodes (HPLD) and other electronic and photonic components. AHS uses a liquid metal coolant flowing at high speed in a miniature closed and sealed loop. The liquid metal coolant receives waste heat from an HPLD at high flux and transfers it at much reduced flux to environment, primary coolant fluid, heat pipe, or structure. Liquid metal flow is maintained electromagnetically without any moving parts. Velocity of liquid metal flow can be controlled electronically, thus allowing for temperature control of HPLD wavelength. This feature also enables operation at a stable wavelength over a broad range of ambient conditions. Results from testing an HPLD cooled by AHS are presented.

  1. New mechanism of ultra-deep drilling of solids by high-power lasers

    NASA Astrophysics Data System (ADS)

    Kudryashov, Sergey I.; Pakhomov, Andrew V.; Allen, Susan D.

    2005-04-01

    A new mechanism of ultra-deep drilling and related molten material expulsion during high-power short-pulse laser ablation of metals, semiconductors and dielectrics is proposed. In this mechanism ultra-deep (multi-micron) heat penetration and melting depths in these materials are assumed to result from their bulk absorption of thermal short-wavelength con-tinuous and characteristic radiation emitted by hot near-surface ablative laser plasmas. Multi-microsecond delays for expulsion of subsonic jets of micron-size droplets and for re-radiation of UV bursts from the irradiated targets are ex-plained by subsurface explosive boiling in bulk of the resulting ultra-deep melt pool.

  2. Electron beam pumped semiconductor laser

    NASA Technical Reports Server (NTRS)

    Hug, William F. (Inventor); Reid, Ray D. (Inventor)

    2009-01-01

    Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

  3. High power amplification of a tailored-pulse fiber laser

    NASA Astrophysics Data System (ADS)

    Saby, Julien; Sangla, Damien; Caplette, Stéphane; Boula-Picard, Reynald; Drolet, Mathieu; Reid, Benoit; Salin, François

    2013-02-01

    We demonstrate the amplification of a 1064nm pulse-programmable fiber laser with Large Pitch Rod-Type Fibers of various Mode field diameters from 50 to 70 μm. We have developed a high power fiber amplifier at 1064nm delivering up to 100W/1mJ at 15ns pulses and 30W/300μJ at 2ns with linearly polarized and diffraction limited output beam (M²<1.2). The specific seeder from ESI - Pyrophotonics Lasers used in the experiment allowed us to obtain tailored-pulse programmable on demand at the output from 2ns to 600ns for various repetition rates from 10 to 500 kHz. We could demonstrate square pulses or any other shapes (also multi-pulses) whatever the repetition rate or the pulse duration. We also performed frequency conversion with LBO crystals leading to 50W at 532nm and 25W at 355nm with a diffraction limited output. Similar experiments performed at 1032nm are also reported.

  4. Injection locking of a high power ultraviolet laser diode for laser cooling of ytterbium atoms

    SciTech Connect

    Hosoya, Toshiyuki; Miranda, Martin; Inoue, Ryotaro; Kozuma, Mikio

    2015-07-15

    We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power of 40 mW and another laser diode for amplifying the laser power up to 220 mW by injection locking. The systematic method for optimization of our injection locking can also be applied to high power light sources at any other wavelengths. Our system does not depend on complex nonlinear frequency-doubling and can be made compact, which will be useful for providing light sources for laser cooling experiments including transportable optical lattice clocks.

  5. Micro-scanning mirrors for high-power laser applications in laser surgery

    NASA Astrophysics Data System (ADS)

    Sandner, Thilo; Kimme, Simon; Grasshoff, Thomas; Todt, Ulrich; Graf, Alexander; Tulea, Cristian; Lenenbach, Achim; Schenk, Harald

    2014-03-01

    We present two novel micro scanning mirrors with large aperture and HR dielectric coatings suitable for high power laser applications in a miniaturized laser-surgical instrument for neurosurgery to cut skull tissue. An electrostatic driven 2D-raster scanning mirror with 5x7.1mm aperture is used for dynamic steering of a ps-laser beam of the laser cutting process. A second magnetic 2D-beam steering mirror enables a static beam correction of a hand guided laser instrument. Optimizations of a magnetic gimbal micro mirror with 6 mm x 8 mm mirror plate are presented; here static deflections of 3° were reached. Both MEMS devices were successfully tested with a high power ps-laser at 532nm up to 20W average laser power.

  6. Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

    NASA Technical Reports Server (NTRS)

    Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

    2004-01-01

    Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

  7. Semiconductor Laser Phased Array

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1985-01-01

    Oscillations synchronized and modulated individually for beam steering. Phased array of GaAs infrared lasers put out powerful electronically-steerable coherent beam. Fabricated as integrated circuit on GaAs chip, new device particularly suited to optical communications, optical data processing and optical detection and ranging systems.

  8. Application and the key technology on high power fiber-optic laser in laser weapon

    NASA Astrophysics Data System (ADS)

    Qu, Zhou; Li, Qiushi; Meng, Haihong; Sui, Xin; Zhang, Hongtao; Zhai, Xuhua

    2014-12-01

    The soft-killing laser weapon plays an important role in photoelectric defense technology. It can be used for photoelectric detection, search, blinding of photoelectric sensor and other devices on fire control and guidance devices, therefore it draws more and more attentions by many scholars. High power fiber-optic laser has many virtues such as small volume, simple structure, nimble handling, high efficiency, qualified light beam, easy thermal management, leading to blinding. Consequently, it may be used as the key device of soft-killing laser weapon. The present study introduced the development of high power fiber-optic laser and its main features. Meanwhile the key technology of large mode area (LMA) optical fiber design, the beam combination technology, double-clad fiber technology and pumping optical coupling technology was stated. The present study is aimed to design high doping LMA fiber, ensure single mode output by increasing core diameter and decrease NA. By means of reducing the spontaneous emission particle absorbed by fiber core and Increasing the power density in the optical fiber, the threshold power of nonlinear effect can increase, and the power of single fiber will be improved. Meantime, high power will be obtained by the beam combination technology. Application prospect of high power fiber laser in photoelectric defense technology was also set forth. Lastly, the present study explored the advantages of high power fiber laser in photoelectric defense technology.

  9. Power conversion efficiency of semiconductor injection lasers and laser arrays in CW operation

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1985-01-01

    The problem of optimizing power conversion efficiency of semiconductor lasers and laser arrays and minimizing efficiency degradation due to temperature effects is treated. A method for calculating this efficiency is described and some calculated results are presented and discussed. Under some conditions, a small increase in the thermal resistance of the device can result in a large reduction of its efficiency. Temperature effects are important in high-power semiconductor laser, and in particular in laser arrays, where low thermal resistance heat sinking may be crucial to the device operation.

  10. High power diode laser Master Oscillator-Power Amplifier (MOPA)

    NASA Technical Reports Server (NTRS)

    Andrews, John R.; Mouroulis, P.; Wicks, G.

    1994-01-01

    High power multiple quantum well AlGaAs diode laser master oscillator - power amplifier (MOPA) systems were examined both experimentally and theoretically. For two pass operation, it was found that powers in excess of 0.3 W per 100 micrometers of facet length were achievable while maintaining diffraction-limited beam quality. Internal electrical-to-optical conversion efficiencies as high as 25 percent were observed at an internal amplifier gain of 9 dB. Theoretical modeling of multiple quantum well amplifiers was done using appropriate rate equations and a heuristic model of the carrier density dependent gain. The model gave a qualitative agreement with the experimental results. In addition, the model allowed exploration of a wider design space for the amplifiers. The model predicted that internal electrical-to-optical conversion efficiencies in excess of 50 percent should be achievable with careful system design. The model predicted that no global optimum design exists, but gain, efficiency, and optical confinement (coupling efficiency) can be mutually adjusted to meet a specific system requirement. A three quantum well, low optical confinement amplifier was fabricated using molecular beam epitaxial growth. Coherent beam combining of two high power amplifiers injected from a common master oscillator was also examined. Coherent beam combining with an efficiency of 93 percent resulted in a single beam having diffraction-limited characteristics. This beam combining efficiency is a world record result for such a system. Interferometric observations of the output of the amplifier indicated that spatial mode matching was a significant factor in the less than perfect beam combining. Finally, the system issues of arrays of amplifiers in a coherent beam combining system were investigated. Based upon experimentally observed parameters coherent beam combining could result in a megawatt-scale coherent beam with a 10 percent electrical-to-optical conversion efficiency.

  11. Present status and future aspects of high-power diode laser materials processing under the view of a German national research project

    NASA Astrophysics Data System (ADS)

    Bachmann, Friedrich G.

    2000-06-01

    High power diode lasers from a few Watts up to several Kilowatts have entered industrial manufacturing environment for materials processing applications. The technology has proven to show unique features, e.g. high efficiency, small size, low energy consumption and high reliability. In the first part of this paper a short description of state-of- the-art high power diode laser technology and applications is provided and the benefits and restrictions of this laser technology will be evaluated. For large scale penetration into the manufacture market, the restrictions, especially the rather poor beam quality of high power diode lasers compared to conventional lasers have to be overcome. Also, the specialities of the high power diode lasers, i.e. their modular structure and their extremely small size have to be translated into laser manufacturing technology. The further improvement of high power diode lasers as well as the development of new diode laser specific manufacturing technologies are the essential topics of a National German Minister Priority Project entitled 'Modular Diode Laser Beam Tools': 22 Partners from industry and institutions, 4 semiconductor experts, 5 laser manufacturers and 14 applicants are working together in frame of this project to work out and transfer a joint strategy and system technology to the benefits of the future of high power diode laser technology. The goals, the structure and the work of this project will be described in the second part of this paper.

  12. Systems and assemblies for transferring high power laser energy through a rotating junction

    DOEpatents

    Norton, Ryan J.; McKay, Ryan P.; Fraze, Jason D.; Rinzler, Charles C.; Grubb, Daryl L.; Faircloth, Brian O.; Zediker, Mark S.

    2016-01-26

    There are provided high power laser devices and systems for transmitting a high power laser beam across a rotating assembly, including optical slip rings and optical rotational coupling assemblies. These devices can transmit the laser beam through the rotation zone in free space or within a fiber.

  13. Design and fabrication of high power single mode double-trench ridge waveguide laser

    NASA Astrophysics Data System (ADS)

    Tan, Shaoyang; Zhai, Teng; Wang, Wei; Zhang, Ruikang; Lu, Dan; Ji, Chen

    2014-03-01

    A high power single-lateral-mode double-trench ridge waveguide semiconductor laser is reported. The laser has a compressively strained double quantum-well (DQW) and an GaAs/AlGaAs separate confinement structure. The ridge waveguide is defined by two trenches of finite width on either side of the ridge, which will result mode radiation towards outside of the trenches. The relationship between the leakage loss and the waveguide geometry of the each lateral mode is studied with effective index method. The relationship under different bias condition is evaluated. Based on the simulation, lasers with various trench width, trench depth and ridge width are fabricated and tested. With optimized geometry parameters, a laser of 1.5-mm cavity length with a maximum single-lateral-mode operation current of 550 mA is obtained. The threshold current and the slope efficiency of the laser is 30 mA and 0.72 W/A, respectively. The maximum single-lateral-mode power is up to 340 mW.

  14. Method and apparatus for delivering high power laser energy over long distances

    SciTech Connect

    Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O; Koblick, Yeshaya; Moxley, Joel F

    2015-04-07

    Systems, devices and methods for the transmission and delivery of high power laser energy deep into the earth and for the suppression of associated nonlinear phenomena. Systems, devices and methods for the laser drilling of a borehole in the earth. These systems can deliver high power laser energy down a deep borehole, while maintaining the high power to advance such boreholes deep into the earth and at highly efficient advancement rates.

  15. High-Power Solid-State Lasers from a Laser Glass Perspective

    SciTech Connect

    Campbell, J H; Hayden, J S; Marker, A J

    2010-12-17

    Advances in laser glass compositions and manufacturing have enabled a new class of high-energy/high-power (HEHP), petawatt (PW) and high-average-power (HAP) laser systems that are being used for fusion energy ignition demonstration, fundamental physics research and materials processing, respectively. The requirements for these three laser systems are different necessitating different glasses or groups of glasses. The manufacturing technology is now mature for melting, annealing, fabricating and finishing of laser glasses for all three applications. The laser glass properties of major importance for HEHP, PW and HAP applications are briefly reviewed and the compositions and properties of the most widely used commercial laser glasses summarized. Proposed advances in these three laser systems will require new glasses and new melting methods which are briefly discussed. The challenges presented by these laser systems will likely dominate the field of laser glass development over the next several decades.

  16. MOVPE growth of Al-free 808 nm high power lasers using TBP and TBA in pure N 2 ambient

    NASA Astrophysics Data System (ADS)

    Tang, Xiaohong; Zhang, Baolin; Bo, Baoxue; Mei, Ting; Chin, Mee-Koy

    2006-02-01

    In metalorganic vapor-phase epitaxy (MOVPE) growth of III-V semiconductor compounds and device structures, arsine (AsH 3) and phosphine (PH 3) are normally used as group V precursors and hydrogen is used as the carrier gas, which is very toxic and has safety hazard. In this contribution, MOVPE growths of Al-free 808 nm high power diode lasers by using metalorganic (MO) group V sources, TBAs and TBP, and nitrogen as carrier gas has been reported. InGaAsP/InGaP/GaAs single quantum well (SQW) high power laser structure emitting at 808 nm has been adopted to characterize the material quality. Broad area stripe lasers with the stripe width of 150 μm have been fabricated from the wafers grown by the MOVPE using MO group V sources. Lasing of the device with threshold current density of 506 A/cm 2 has been successfully achieved.

  17. High-power metal halide vapour lasers oscillating in deep ultraviolet, visible and middle infrared spectral ranges

    NASA Astrophysics Data System (ADS)

    Temelkov, K. A.; Slaveeva, S. I.; Kirilov, V. I.; Kostadinov, I. K.; Vuchkov, N. K.

    2012-05-01

    Middle infrared and deep ultraviolet high-power high-beam-quality stable-operating He-SrBr2 and Cu+ Ne-CuBr lasers excited in nanosecond pulsed longitudinal discharge are developed, patented and studied. Optimal discharge conditions, such as active zone diameter, vapour pressure, buffer-gas pressure, electrical excitation scheme parameters, average input power and pulse repetition frequency, are found. The highest output laser parameters are obtained for the Sr atom and Cu+ lasers, respectively. These lasers equipped with optical systems for the control of laser radiation parameters are used in a large variety of applications, such as precise material microprocessing, including biological tissues, determination of linear optical properties of different newly developed materials, laser-induced modification of conductive polymers and laser-induced fluorescence in wide-gap semiconductors, instead of free electron and excimer lasers, respectively. A master oscillator-power amplifier system, which is based on a high-beam-quality high-power CuBr vapour laser and is equipped with an optic system for laser beam control and with the X-Y stage controlled by adequate software as well, is developed and used in high-precision micromachining of samples made of nickel and tool steel.

  18. High power, short pulses ultraviolet laser for the development of a new x-ray laser

    SciTech Connect

    Meixler, L.; Nam, C.H.; Robinson, J.; Tighe, W.; Krushelnick, K.; Suckewer, S.; Goldhar, J.; Seely, J.; Feldman, U.

    1989-04-01

    A high power, short pulse ultraviolet laser system (Powerful Picosecond-Laser) has been developed at the Princeton Plasma Physics Laboratory (PPPL) as part of experiments designed to generate shorter wavelength x-ray lasers. With the addition of pulse compression and a final KrF amplifier the laser output is expected to have reached 1/3-1/2 TW (10/sup 12/ watts) levels. The laser system, particularly the final amplifier, is described along with some initial soft x-ray spectra from laser-target experiments. The front end of the PP-Laser provides an output of 20--30 GW (10/sup 9/ watts) and can be focussed to intensities of /approximately/10/sup 16/ W/cm/sup 2/. Experiments using this output to examine the effects of a prepulse on laser-target interaction are described. 19 refs., 14 figs.

  19. A NASA high-power space-based laser research and applications program

    NASA Technical Reports Server (NTRS)

    Deyoung, R. J.; Walberg, G. D.; Conway, E. J.; Jones, L. W.

    1983-01-01

    Applications of high power lasers are discussed which might fulfill the needs of NASA missions, and the technology characteristics of laser research programs are outlined. The status of the NASA programs or lasers, laser receivers, and laser propulsion is discussed, and recommendations are presented for a proposed expanded NASA program in these areas. Program elements that are critical are discussed in detail.

  20. Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm.

    PubMed

    Chi, Mingjun; Erbert, G; Sumpf, B; Petersen, Paul Michael

    2010-05-15

    A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659to675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than 0.07 nm throughout the tuning range, and the beam quality factor M(2) is 2.0 with the output power of 1.27 W. PMID:20479803

  1. Diffraction coupled phase-locked semiconductor laser array

    NASA Technical Reports Server (NTRS)

    Katz, J.; Margalit, S.; Yariv, A.

    1983-01-01

    A new monolithic, diffraction coupled phase-locked semiconductor laser array has been fabricated. Stable narrow far-field patterns (approximately 3 deg) and peak power levels of 1 W have been obtained for 100-micron-wide devices with threshold currents as low as 250 mA. Such devices may be useful in applications where high power levels and stable radiation patterns are needed.

  2. The NASA high-power carbon dioxide laser - A versatile tool for laser applications

    NASA Technical Reports Server (NTRS)

    Lancashire, R. B.; Alger, D. L.; Manista, E. J.; Slaby, J. G.; Dunning, J. W.; Stubbs, R. M.

    1977-01-01

    The NASA Lewis Research Center has designed and fabricated a closed-cycle, continuous wave (CW), carbon dioxide (CO2) high-power laser to support research for the identification and evaluation of possible high-power laser applications. The device is designed to generate up to 70 kW of laser power in annular-shape beams from 1 to 9 cm in diameter. Electric discharge, either self-sustained or electron-beam-sustained, is used for excitation. This laser facility can be used in two ways. First, it provides a versatile tool on which research can be performed to advance the state-of-the-art technology of high-power CO2 lasers in such areas as electric excitation, laser chemistry, and quality of output beams, all of which are important whether the laser application is government or industry oriented. Second, the facility provides a well-defined, continuous wave beam for various application experiments, such as propulsion, power conversion, and materials processing.

  3. GaAs Substrates for High-Power Diode Lasers

    NASA Astrophysics Data System (ADS)

    Mueller, Georg; Berwian, Patrick; Buhrig, Eberhard; Weinert, Berndt

    GaAs substrate crystals with low dislocation density (Etch-Pit Density (EPD) < 500,^-2) and Si-doping ( ~10^18,^-3) are required for the epitaxial production of high-power diode-lasers. Large-size wafers (= 3 mathrm{in} -> >=3,) are needed for reducing the manufacturing costs. These requirements can be fulfilled by the Vertical Bridgman (VB) and Vertical Gradient Freeze (VGF) techniques. For that purpose we have developed proper VB/VGF furnaces and optimized the thermal as well as the physico-chemical process conditions. This was strongly supported by extensive numerical process simulation. The modeling of the VGF furnaces and processes was made by using a new computer code called CrysVUN++, which was recently developed in the Crystal Growth Laboratory in Erlangen.GaAs crystals with diameters of 2 and 3in were grown in pyrolytic Boron Nitride (pBN) crucibles having a small-diameter seed section and a conical part. Boric oxide was used to fully encapsulate the crystal and the melt. An initial silicon content in the GaAs melt of c (melt) = 3 x10^19,^-3 has to be used in order to achieve a carrier concentration of n = (0.8- 2) x10^18,^-3, which is the substrate specification of the device manufacturer of the diode-laser. The EPD could be reduced to values between 500,^-2 and 50,^-2 with a Si-doping level of 8 x10^17 to 1 x10^18,^-3. Even the 3in wafers have rather large dislocation-free areas. The lowest EPDs ( <100,^-2) are achieved for long seed wells of the crucible.

  4. Solid-state laser-pumped high-power electric-discharge HF laser

    SciTech Connect

    Velikanov, S D; Garanin, Sergey G; Kodola, B E; Komarov, Yu N; Shchurov, V V; Efanov, V M; Efanov, M V; Yarin, P M; Kazantsev, S Yu; Kononov, I G; Firsov, K N; Domazhirov, A P; Podlesnykh, S V; Sivachev, A A

    2010-08-03

    We report the possibility of creating high-power nonchain electric-discharge HF lasers with an all-solid-state pump source. The maximum energy stored in the pump source capacitors based on solid-state FID-switches is 990 J for the open-circuit voltage of 240 kV. The pulse energy of 30 J is obtained in the hydrogen-containing SF{sub 6} mixture at the electric efficiency of the order of 3%. (lasers)

  5. Physics of laser fusion. Volume III. High-power pulsed lasers

    SciTech Connect

    Holzrichter, J.F.; Eimerl, D.; George, E.V.; Trenholme, J.B.; Simmons, W.W.; Hunt, J.T.

    1982-09-01

    High-power pulsed lasers can deliver sufficient energy on inertial-confinement fusion (ICF) time scales (0.1 to 10 ns) to heat and compress deuterium-tritium fuel to fusion-reaction conditions. Several laser systems have been examined, including Nd:glass, CO/sub 2/, KrF, and I/sub 2/, for their ICF applicability. A great deal of developmental effort has been applied to the Nd:glass laser and the CO/sub 2/ gas laser systems; these systems now deliver > 10/sup 4/ J and 20 x 10/sup 12/ W to ICF targets. We are constructing the Nova Nd:glass laser at LLNL to provide > 100 kJ and > 100 x 10/sup 12/ W of 1-..mu..m radiation for fusion experimentation in the mid-1980s. For ICF target gain > 100 times the laser input, we expect that the laser driver must deliver approx. 3 to 5 MJ of energy on a time scale of 10 to 20 ns. In this paper we review the technological status of fusion-laser systems and outline approaches to constructing high-power pulsed laser drivers.

  6. Microfabrication techniques for semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Tamanuki, Takemasa; Tadokoro, T.; Morito, Ken; Koyama, Fumio; Iga, Kenichi

    1991-03-01

    Several important techniques for fabricating micro-cavity semiconductor lasers including surface emitting lasers have been developed. Reactive ion beam etch (RIBE) for GaA1As and GaInAsP is employed and its condition for vertical fine etch under low damages and removal of residual damages are made clear. Passivation by sulfur is introduced to the fabrication process. Regrowth techniques for DII structures by LPE and MOCVD has been established. Some device applications are discussed. 1. MICRO-ETCHING PROCESS Micro-cavity lasers including a vertical cavity surface emitting laser1 are attracting the research interest for optical parallel processing and parallel light wave systems. In order to realize micron-order or sub-micron laserdevices the technology of micro-fabrication must be established. In this study the total fabrication technology has been almost completed. First fine and low damage etching condition by ultrahigh vacuum background RIBE using a Cl2 gas has been made clear. We have found an isotropic etching condition for the vertical side wall formation and good mask traceability i. e. the acceleration voltage is 500 V and substrate temperature is 150 C with a 5000A thickness Si02 mask. Residual damages induced on the surface and the side wall are characterized by photo-luminescence and making stripe lasers. Figure 1 is the histogram of the nominal threshold current density for (a) oxide-defined stripe lasers (b) RIBE etched and LPE regrown BH-lasers using an LPE grown DII wafer (LPE/LPE) and (c) RIBE etched

  7. Effect of interface layer on the performance of high power diode laser arrays

    NASA Astrophysics Data System (ADS)

    Zhang, Pu; Wang, Jingwei; Xiong, Lingling; Li, Xiaoning; Hou, Dong; Liu, Xingsheng

    2015-02-01

    Packaging is an important part of high power diode laser (HPLD) development and has become one of the key factors affecting the performance of high power diode lasers. In the package structure of HPLD, the interface layer of die bonding has significant effects on the thermal behavior of high power diode laser packages and most degradations and failures in high power diode laser packages are directly related to the interface layer. In this work, the effects of interface layer on the performance of high power diode laser array were studied numerically by modeling and experimentally. Firstly, numerical simulations using finite element method (FEM) were conducted to analyze the effects of voids in the interface layer on the temperature rise in active region of diode laser array. The correlation between junction temperature rise and voids was analyzed. According to the numerical simulation results, it was found that the local temperature rise of active region originated from the voids in the solder layer will lead to wavelength shift of some emitters. Secondly, the effects of solder interface layer on the spectrum properties of high power diode laser array were studied. It showed that the spectrum shape of diode laser array appeared "right shoulder" or "multi-peaks", which were related to the voids in the solder interface layer. Finally, "void-free" techniques were developed to minimize the voids in the solder interface layer and achieve high power diode lasers with better optical-electrical performances.

  8. Development of high coherence high power 193nm laser

    NASA Astrophysics Data System (ADS)

    Tanaka, Satoshi; Arakawa, Masaki; Fuchimukai, Atsushi; Sasaki, Yoichi; Onose, Takashi; Kamba, Yasuhiro; Igarashi, Hironori; Qu, Chen; Tamiya, Mitsuru; Oizumi, Hiroaki; Ito, Shinji; Kakizaki, Koji; Xuan, Hongwen; Zhao, Zhigang; Kobayashi, Yohei; Mizoguchi, Hakaru

    2016-03-01

    We have been developing a hybrid 193 nm ArF laser system that consists of a solid state seeding laser and an ArF excimer laser amplifier for power-boosting. The solid state laser consists of an Yb-fiber-solid hybrid laser system and an Er-fiber laser system as fundamentals, and one LBO and three CLBO crystals for frequency conversion. In an ArF power amplifier, the seed laser passes through the ArF gain media three times, and an average power of 110 W is obtained. As a demonstration of the potential applications of the laser, an interference exposure test is performed.

  9. Integrated injection-locked semiconductor diode laser

    DOEpatents

    Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

    1991-02-19

    A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

  10. Integrated injection-locked semiconductor diode laser

    DOEpatents

    Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

    1991-01-01

    A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

  11. High power continuous wave injection-locked solid state laser

    SciTech Connect

    Nabors, C.D.; Byer, R.L.

    1991-06-25

    This patent describes an injection locked laser system. It comprises a master laser, the master laser including a solid state gain medium and having a continuous wave, single frequency output; a slave laser including a solid state gain medium located in a resonant cavity and having a continuous wave output at a power at least ten times greater than the master laser, with the output of the master laser being injected into the slave laser in order to cause the slave laser to oscillate at the same frequency as the output of the master laser; and means for actively stabilizing the slave laser so that its output frequency remains locked with the output frequency of the master laser.

  12. Macular injury resulting from a high-powered tank laser telemetry device.

    PubMed

    Durukan, Ali Hakan; Gokce, G; Guven, S; Koylu, T; Erdurman, F C

    2015-12-01

    A high-powered laser is an essential part of a modern military rangefinder; however, this paper presents three cases with macular injury resulting from a high-powered tank laser telemetry device. All injuries occurred when another user deliberately pointed the telemetry target unit at the patient's eyes. The devastating effect of this high-powered laser resulted in a permanent foveal scar in the second patient and a macular hole formation in the third patient. This report emphasises that education plays a primary role in preventing accidental laser injuries. Using general guidelines and safety regulations will prevent accidental macular injuries. PMID:25525204

  13. High-power, surface-emitting quantum cascade laser operating in a symmetric grating mode

    NASA Astrophysics Data System (ADS)

    Boyle, C.; Sigler, C.; Kirch, J. D.; Lindberg, D. F.; Earles, T.; Botez, D.; Mawst, L. J.

    2016-03-01

    Grating-coupled surface-emitting (GCSE) lasers generally operate with a double-lobed far-field beam pattern along the cavity-length direction, which is a result of lasing being favored in the antisymmetric grating mode. We experimentally demonstrate a GCSE quantum-cascade laser design allowing high-power, nearly single-lobed surface emission parallel to the longitudinal cavity. A 2nd-order Au-semiconductor distributed-feedback (DFB)/distributed-Bragg-reflector (DBR) grating is used for feedback and out-coupling. The DFB and DBR grating regions are 2.55 mm- and 1.28 mm-long, respectively, for a total grating length of 5.1 mm. The lasers are designed to operate in a symmetric (longitudinal) grating mode by causing resonant coupling of the guided optical mode to the antisymmetric surface-plasmon modes of the 2nd-order metal/semiconductor grating. Then, the antisymmetric modes are strongly absorbed by the metal in the grating, causing the symmetric mode to be favored to lase, which, in turn, produces a single-lobed beam over a range of grating duty-cycle values of 36%-41%. Simulations indicate that the symmetric mode is always favored to lase, independent of the random phase of reflections from the device's cleaved ends. Peak pulsed output powers of ˜0.4 W were measured with nearly single-lobe beam-pattern (in the longitudinal direction), single-spatial-mode operation near 4.75 μm wavelength. Far-field measurements confirm a diffraction-limited beam pattern, in agreement with simulations, for a source-to-detector separation of 2 m.

  14. Widely tunable hybrid semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Koh, Ping-Chiek; Plumb, Richard G. S.

    1999-04-01

    A new hybrid design tunable semiconductor laser, with a wide tuning range, a narrow linewidth, simple tuning/control algorithms, low variations in output power across its tuning range and simple fabrication, is introduced. This hybrid laser consists of a large spot reflective amplifier (LS-RA) coupled to a Lithium Niobate Acousto-Optic Filter (AOF), giving wavelength selective feedback. The LS-RA waveguide is angled by 10 degrees to the coupling facet, but is normal to the other facet, giving reflectivities of 5 X 10-5 and 3 X 10-1 respectively. This amplifier structure allows maximum coupling to the AOF without stringent alignment tolerance. THe AOF consists of a 2-stage acoustic TE/TM converter with a high TE reflectivity coating at the end. A propagating surface acoustic wave is employed to phase-match the TE and TM modes of a specific wavelength, achieving a narrow-band feedback into the LS-RA. Output power and wavelength of the hybrid laser are controlled by the LS-RA current and RF drive frequency of the AOF respectively. Simulations using a Time-Domain Model and initial experiments have shown that the hybrid laser have a wide tuning range, narrow linewidth, SMSR >= 30 dB and low power variations across its tuning range.

  15. On-shot laser beam diagnostics for high-power laser facility with phase modulation imaging

    NASA Astrophysics Data System (ADS)

    Pan, X.; Veetil, S. P.; Liu, C.; Tao, H.; Jiang, Y.; Lin, Q.; Li, X.; Zhu, J.

    2016-05-01

    A coherent-modulation-imaging-based (CMI) algorithm has been employed for on-shot laser beam diagnostics in high-power laser facilities, where high-intensity short-pulsed lasers from terawatt to petawatt are designed to realize inertial confinement fusion (ICF). A single-shot intensity measurement is sufficient for wave-front reconstruction, both for the near-field and far-field at the same time. The iterative reconstruction process is computationally very efficient and was completed in dozens of seconds by the additional use of a GPU device to speed it up. The compact measurement unit—including a CCD and a piece of pre-characterized phase plate—makes it convenient for focal-spot intensity prediction in the target chamber. It can be placed almost anywhere in high-power laser facilities to achieve near-field wave-front diagnostics. The feasibility of the method has been demonstrated by conducting a series of experiments with diagnostic beams and seed pulses with deactivated amplifiers in our high-power laser system.

  16. High-power fiber laser studies at the Polaroid Corporation

    NASA Astrophysics Data System (ADS)

    Muendel, Martin H.

    1998-06-01

    Current work on the Polaroid double-clad fiber laser is discussed. Experiments towards testing the upper power limits of fiber lasers are described. Models for the laser output in the rate-equation approximation, for the laser polarization state, and for the axial-mode-beating noise are presented and compared to experiment.

  17. Target isolation system, high power laser and laser peening method and system using same

    DOEpatents

    Dane, C. Brent; Hackel, Lloyd A.; Harris, Fritz

    2007-11-06

    A system for applying a laser beam to work pieces, includes a laser system producing a high power output beam. Target delivery optics are arranged to deliver the output beam to a target work piece. A relay telescope having a telescope focal point is placed in the beam path between the laser system and the target delivery optics. The relay telescope relays an image between an image location near the output of the laser system and an image location near the target delivery optics. A baffle is placed at the telescope focal point between the target delivery optics and the laser system to block reflections from the target in the target delivery optics from returning to the laser system and causing damage.

  18. Coherent beam combiner for a high power laser

    DOEpatents

    Dane, C. Brent; Hackel, Lloyd A.

    2002-01-01

    A phase conjugate laser mirror employing Brillouin-enhanced four wave mixing allows multiple independent laser apertures to be phase locked producing an array of diffraction-limited beams with no piston phase errors. The beam combiner has application in laser and optical systems requiring high average power, high pulse energy, and low beam divergence. A broad range of applications exist in laser systems for industrial processing, especially in the field of metal surface treatment and laser shot peening.

  19. Transmission line pulse system for avalanche characterization of high power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Riccio, Michele; Ascione, Giovanni; De Falco, Giuseppe; Maresca, Luca; De Laurentis, Martina; Irace, Andrea; Breglio, Giovanni

    2013-05-01

    Because of the increasing in power density of electronic devices for medium and high power application, reliabilty of these devices is of great interest. Understanding the avalanche behaviour of a power device has become very important in these last years because it gives an indication of the maximum energy ratings which can be seen as an index of the device ruggedness. A good description of this behaviour is given by the static IV blocking characteristc. In order to avoid self heating, very relevant in high power devices, very short pulses of current have to be used, whose value can change from few milliamps up to tens of amps. The most used method to generate short pulses is the TLP (Transmission Line Pulse) test, which is based on charging the equivalent capacitance of a transmission line to high value of voltage and subsequently discharging it onto a load. This circuit let to obtain very short square pulses but it is mostly used for evaluate the ESD capability of semiconductor and, in this environment, it generates pulses of low amplitude which are not high enough to characterize the avalanche behaviour of high power devices . Advanced TLP circuit able to generate high current are usually very expensive and often suffer of distorption of the output pulse. In this article is proposed a simple, low cost circuit, based on a boosted-TLP configuration, which is capable to produce very square pulses of about one hundreds of nanosecond with amplitude up to some tens of amps. A prototype is implemented which can produce pulses up to 20A of amplitude with 200 ns of duration which can characterize power devices up to 1600V of breakdown voltage. Usage of microcontroller based logic make the circuit very flexible. Results of SPICE simulation are provided, together with experimental results. To prove the effectiveness of the circuit, the I-V blocking characteristics of two commercial devices, namely a 600V PowerMOS and a 1200V Trench-IGBT, are measured at different

  20. High-power LD end-pumped Tm:YAG ceramic slab laser

    NASA Astrophysics Data System (ADS)

    Liu, Xuan; Huang, Haitao; Shen, Deyuan; Fan, Xuliang; Yao, Weichao; Zhu, Heyuan; Zhang, Jian; Tang, Dingyuan

    2015-03-01

    A high-power Tm:YAG ceramic slab laser is reported. Deliberate thermal management was made to dissipate the heat effectively and release the stress in ceramics. The influence of pump wavelength on laser performance was investigated. A maximum of 52 W output power was achieved, corresponding to a slope efficiency of 27.8 % with respect to the incident pump power. As to our knowledge, this is the highest 2-μm laser output power reported in Tm:YAG ceramic lasers. This result proves that Tm:YAG laser ceramic is a promising candidate for 2-μm high-power laser applications.

  1. Method and apparatus for delivering high power laser energy over long distances

    DOEpatents

    Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O; Koblick, Yeshaya; Moxley, Joel F

    2013-08-20

    Systems, devices and methods for the transmission of 1 kW or more of laser energy deep into the earth and for the suppression of associated nonlinear phenomena. Systems, devices and methods for the laser drilling of a borehole in the earth. These systems can deliver high power laser energy down a deep borehole, while maintaining the high power to advance such boreholes deep into the earth and at highly efficient advancement rates.

  2. Methods for enhancing the efficiency of creating a borehole using high power laser systems

    DOEpatents

    Zediker, Mark S.; Rinzler, Charles C.; Faircloth, Brian O.; Koblick, Yeshaya; Moxley, Joel F.

    2014-06-24

    Methods for utilizing 10 kW or more laser energy transmitted deep into the earth with the suppression of associated nonlinear phenomena to enhance the formation of Boreholes. Methods for the laser operations to reduce the critical path for forming a borehole in the earth. These methods can deliver high power laser energy down a deep borehole, while maintaining the high power to perform operations in such boreholes deep within the earth.

  3. Method and system for advancement of a borehole using a high power laser

    SciTech Connect

    Moxley, Joel F.; Land, Mark S.; Rinzler, Charles C.; Faircloth, Brian O.; Zediker, Mark S.

    2014-09-09

    There is provided a system, apparatus and methods for the laser drilling of a borehole in the earth. There is further provided with in the systems a means for delivering high power laser energy down a deep borehole, while maintaining the high power to advance such boreholes deep into the earth and at highly efficient advancement rates, a laser bottom hole assembly, and fluid directing techniques and assemblies for removing the displaced material from the borehole.

  4. Semiconductor disk laser-pumped subpicosecond holmium fibre laser

    SciTech Connect

    Chamorovskiy, A Yu; Marakulin, A V; Leinonen, T; Kurkov, Andrei S; Okhotnikov, Oleg G

    2012-01-31

    The first passively mode-locked holmium fibre laser has been demonstrated, with a semiconductor saturable absorber mirror (SESAM) as a mode locker. Semiconductor disk lasers have been used for the first time to pump holmium fibre lasers. We obtained 830-fs pulses at a repetition rate of 34 MHz with an average output power of 6.6 mW.

  5. Applications of semiconductor lasers to secure communications

    NASA Astrophysics Data System (ADS)

    Mirasso, Claudio R.

    2000-12-01

    We numerically study the synchronization of two chaotic semiconductor lasers in a master-slave configuration. To synchronize the lasers a small amount of the output power from the master laser is injected into the slave laser. We show that the output of the master laser can be used as a chaotic carrier to encode a digital message which can be recovered at the receiver. We also check the quality of the synchronization diagram when the two lasers are slightly different.

  6. Compact deep UV laser system at 222.5 nm by single-pass frequency doubling of high-power GaN diode laser emission

    NASA Astrophysics Data System (ADS)

    Ruhnke, Norman; Müller, André; Eppich, Bernd; Güther, Reiner; Maiwald, Martin; Sumpf, Bernd; Erbert, Götz; Tränkle, Günther

    2016-03-01

    Deep ultraviolet (DUV) lasers emitting below 300 nm are of great interest for many applications, for instance in medical diagnostics or for detecting biological agents. Established DUV lasers, e.g. gas lasers or frequency quadrupled solid-state lasers, are relatively bulky and have high power consumptions. A compact and reliable laser diode based system emitting in the DUV could help to address applications in environments where a portable and robust light source with low power consumption is needed. In this work, a compact DUV laser system based on single-pass frequency doubling of highpower GaN diode laser emission is presented. A commercially available high-power GaN laser diode from OSRAM Opto Semiconductors serves as a pump source. The laser diode is spectrally stabilized in an external cavity diode laser (ECDL) setup in Littrow configuration. The ECDL system reaches a maximum optical output power of 700 mW, maintaining narrowband emission below 60 pm (FWHM) at 445 nm over the entire operating range. By direct single pass frequency doubling in a BBO crystal with a length of 7.5 mm a maximum DUV output power of 16 μW at a wavelength of 222.5 nm is generated. The presented concept enables compact and efficient diode laser based light sources emitting in the DUV spectral range that are potentially suitable for in situ applications where a small footprint and low power consumption is essential.

  7. Difference-frequency mixing in AgGaS(2) by use of a high-power GaAlAs tapered semiconductor amplifier at 860 nm.

    PubMed

    Simon, U; Tittel, F K; Goldberg, L

    1993-11-15

    As much as 47 microW of cw infrared radiation and 89 microW of pulsed infrared radiation, tunable near 4.3 microm, have been generated by mixing the outputs of a high-power tapered semiconductor amplifier at 858 nm (signal wave) and a Ti:Al(2)O(3) laser at 715 nm (pump wave) in AgGaS(2). The GaAlAs tapered traveling-wave amplifier delivered as much as 1.5 W of diffraction-limited cw power into the nonlinear crystal. Output powers, conversion efficiencies, and spectral characteristics of this novel midinfrared source are discussed. PMID:19829451

  8. High density semiconductor nanodots by direct laser fabrication

    NASA Astrophysics Data System (ADS)

    Haghizadeh, Anahita; Yang, Haeyeon

    2016-03-01

    We report a direct method of fabricating high density nanodots on the GaAs(001) surfaces using laser irradiations on the surface. Surface images indicate that the large clumps are not accompanied with the formation of nanodots even though its density is higher than the critical density above which detrimental large clumps begin to show up in the conventional Stranski-Krastanov growth technique. Atomic force microscopy is used to image the GaAs(001) surfaces that are irradiated by high power laser pulses interferentially. The analysis suggests that high density quantum dots be fabricated directly on semiconductor surfaces.

  9. Optically pumped DBR-free semiconductor disk lasers.

    PubMed

    Yang, Zhou; Albrecht, Alexander R; Cederberg, Jeffrey G; Sheik-Bahae, Mansoor

    2015-12-28

    We report high power distributed Bragg reflector (DBR)-free semiconductor disk lasers. With active regions lifted off and bonded to various transparent heatspreaders, the high thermal impedance and narrow bandwidth of DBRs are mitigated. For a strained InGaAs multi-quantum-well sample bonded to a single-crystalline chemical-vapor deposited diamond, a maximum CW output power of 2.5 W and a record 78 nm tuning range centered at λ≈1160 nm was achieved. Laser operation using a total internal reflection geometry is also demonstrated. Furthermore, analysis for power scaling, based on thermal management, is presented. PMID:26831984

  10. Laser remelting of Ti6AL4V using high power diode laser

    NASA Astrophysics Data System (ADS)

    Amaya-Vázquez, M. R.; Sánchez-Amaya, J. M.; Boukha, Z.; El Amrani, K.; Botana, F. J.

    2012-04-01

    Titanium alloys present excellent mechanical and corrosion properties, being widely employed in different industries such as medical, aerospace, automotive, petrochemical, nuclear and power generation, etc. Ti6Al4V is the α-β alloy most employed in industry. The modification of its properties can be achieved with convectional heat treatments and/or with laser processing. Laser remelting (LR) is a technology applied to Ti6Al4V by other authors with excimer and Nd-Yag laser with pure argon shielding gas to prevent risk of oxidation. In the present contribution, laser remelting has been applied for the first time to Ti6Al4V with a high power diode laser (with pure argon as shielding gas). Results showed that remelted samples (with medium energy densities) have higher microhardness and better corrosion resistance than Ti6Al4V base metal.

  11. Advances in optically pumped semiconductor lasers for blue emission under frequency doubling

    NASA Astrophysics Data System (ADS)

    Bai, Yanbo; Wisdom, Jeffrey; Charles, John; Hyland, Patrick; Scholz, Christian; Xu, Zuntu; Lin, Yong; Weiss, Eli; Chilla, Juan; Lepert, Arnaud

    2016-03-01

    Optically pumped semiconductor lasers (OPSL) offer the advantage of excellent beam quality, wavelength agility, and high power scaling capability. In this talk we will present our recent progress of high-power, 920nm OPSLs frequency doubled to 460nm for lightshow applications. Fundamental challenges and mitigations are revealed through electrical, optical, thermal, and mechanical modeling. Results also include beam quality enhancement in addressing the competition from diode lasers.

  12. High power tube solid-state laser with zigzag propagation of pump and laser beam

    NASA Astrophysics Data System (ADS)

    Savich, Michael

    2015-02-01

    A novel resonator and pumping design with zigzag propagation of pumping and laser beams permits to design an improved tube Solid State Laser (SSL), solving the problem of short absorption path to produce a high power laser beam (100 - 1000kW). The novel design provides an amplifier module and laser oscillator. The tube-shaped SSL includes a gain element fiber-optically coupled to a pumping source. The fiber optic coupling facilitates light entry at compound Brewster's angle of incidence into the laser gain element and uses internal reflection to follow a "zigzag" path in a generally spiral direction along the length of the tube. Optics are arranged for zigzag propagation of the laser beam, while the cryogenic cooling system is traditional. The novel method of lasing uses advantages of cylindrical geometry to reach the high volume of gain medium with compactness and structural rigidity, attain high pump density and uniformity, and reach a low threshold without excessive increase of the temperature of the crystal. The design minimizes thermal lensing and stress effects, and provides high gain amplification, high power extraction from lasing medium, high pumping and lasing efficiency and a high beam quality.

  13. High Power Lasers And Their Application In Materials Processing

    NASA Astrophysics Data System (ADS)

    Bohn, W. L.

    1985-02-01

    The idea of using a laser for materials processing is more than 20 years old. Although the concept of a non-contact method for processing with a beam of light has been pursued with great interest and enthusiasm, the practical use of laser beam processing was slow to develop. The lasers available in the 1960's were fragile and of relatively low power. In the 1970's lasers in the multi-kilowatt range were developed but the problem of laser acceptance by the customer had to be overcome. Today, reliable Nd-Yag and CO2-lasers are available and laser processing is a fast growing market. An additional boost is expected with the development of the next generation of lasers and with increased knowledge of the physical phenomena that underlie laser material processing. This paper will review latest developments in laser technology and laser-workpiece interaction with special emphasis on the impact of high speed photography on the research work in these areas.

  14. High-power free-electron lasers-technology and future applications

    NASA Astrophysics Data System (ADS)

    Socol, Yehoshua

    2013-03-01

    Free-electron laser (FEL) is an all-electric, high-power, high beam-quality source of coherent radiation, tunable - unlike other laser sources - at any wavelength within wide spectral region from hard X-rays to far-IR and beyond. After the initial push in the framework of the “Star Wars” program, the FEL technology benefited from decades of R&D and scientific applications. Currently, there are clear signs that the FEL technology reached maturity, enabling real-world applications. E.g., successful and unexpectedly smooth commissioning of the world-first X-ray FEL in 2010 increased in one blow by more than an order of magnitude (40×) wavelength region available by FEL technology and thus demonstrated that the theoretical predictions just keep true in real machines. Experience of ordering turn-key electron beamlines from commercial companies is a further demonstration of the FEL technology maturity. Moreover, successful commissioning of the world-first multi-turn energy-recovery linac demonstrated feasibility of reducing FEL size, cost and power consumption by probably an order of magnitude in respect to previous configurations, opening way to applications, previously considered as non-feasible. This review takes engineer-oriented approach to discuss the FEL technology issues, keeping in mind applications in the fields of military and aerospace, next generation semiconductor lithography, photo-chemistry and isotope separation.

  15. Absence of amorphous phase in high power femtosecond laser-ablated silicon

    SciTech Connect

    Rogers, Matthew S.; Grigoropoulos, Costas P.; Minor, Andrew M.; Mao, Samuel S.

    2009-01-05

    As femtosecond lasers emerge as viable tools for advanced microscale materials processing, it becomes increasingly important to understand the characteristics of materials resulting from femtosecond laser microablation or micromachining. We conducted transmission electron microscopy experiments to investigate crater structures in silicon produced by repetitive high power femtosecond laser ablation. Comparable experiments of nanosecond laser ablation of silicon were also performed. We found that an amorphous silicon layer that is typically produced in nanosecond laser ablation is absent when the material is irradiated by high power femtosecond laser pulses. Instead, only a defective single crystalline layer was observed in the high power femtosecond laser-ablated silicon crater. Possible mechanisms underlying the formation of the defective single crystalline phase are discussed.

  16. Applications of high power lasers in the battlefield

    NASA Astrophysics Data System (ADS)

    Kalisky, Yehoshua

    2009-09-01

    Laser weapon is currently considered as tactical as well as strategic beam weapons, and is considered as a part of a general layered defense system against ballistic missiles and short-range rockets. This kind of weapon can disable or destroy military targets or incoming objects used by small groups of terrorists or countries, at the speed of light. Laser weapon is effective at long or short distances, owing to beam's unique characteristics such as narrow bandwidth, high brightness, coherent both in time and space, and it travels at the speed of light. Unlike kinetic weapon, laser weapon converts the energy stored in an electromagnetic laser beam into a large amount of heat aimed on a small area spot at the skin of the missile, usually close to the liquid fuel storage tank, warhead case or engine area, following by a temperature increase and finally-catastrophic failure by material ablation or melt. The usefulness of laser light as a weapon has been studied for decades but only in recent years became feasible. There are two types of lasers being used: gas lasers and solid state lasers, including fiber lasers. All these types of lasers will be discussed below.

  17. Beam-guidance optics for high-power fiber laser systems

    NASA Astrophysics Data System (ADS)

    Mohring, Bernd; Tassini, Leonardo; Protz, Rudolf; Zoz, Jürgen

    2013-05-01

    The realization of a high-energy laser weapon system by coupling a large number of industrial high-power fiber lasers is investigated. To perform the combination of the individual beams of the different fiber lasers within the optical path of the laser weapon, a special optical set-up is used. Each optical component is realized either as reflective component oras refractive optics. Both possibilities were investigated by simulations and experiments. From the results, the general aspects for the layout of the beam-guidance optics for a high-power fiber laser system are derived.

  18. Industrial Applications of High Power CO2 Lasers - System Descriptions

    NASA Astrophysics Data System (ADS)

    Gukelberger, Armin

    1986-10-01

    The laser as a cutting tool for sheet metal cutting has beenl well accepted in industry for many years. Several hundreds of units are used for contour cutting of small and medium-sized series on plane metal sheets up to 6 mm thick. Within the last three years, cutting systems have been expanded in three ways: thicker material up to 12 mm can now be cut by using higher powered lasers (1500 W); with the introduction of flying optic systems which cover sheet dimensions up to 4 m x 3 m, the cutting of larger sized metal sheets is possible. In addition, the use of five or six axis systems allows cutting of three-dimensional plastic and metal material. Besides laser cutting, the acceptance of systems for laser welding applications is increa sing. Several systems have been running in production for a couple of years and laser wel ding will probably become the fastest growing market in laser material processing within the next five years. The laser technology is regarded as a beneficial tool for welding, whenever low heat input and, consequently, low heat distortion is requested. To day's main welding application areas are: components of car engines and transmissions, window spacer and stainless steel tube welding, and also car body welding with laser robots or five axis gantry type systems. The output power of CO2-lasers for welding applications is between 1 and 5 kw in most cases.

  19. High power visible diode laser for the treatment of eye diseases by laser coagulation

    NASA Astrophysics Data System (ADS)

    Heinrich, Arne; Hagen, Clemens; Harlander, Maximilian; Nussbaumer, Bernhard

    2015-03-01

    We present a high power visible diode laser enabling a low-cost treatment of eye diseases by laser coagulation, including the two leading causes of blindness worldwide (diabetic retinopathy, age-related macular degeneration) as well as retinopathy of prematurely born children, intraocular tumors and retinal detachment. Laser coagulation requires the exposure of the eye to visible laser light and relies on the high absorption of the retina. The need for treatment is constantly increasing, due to the demographic trend, the increasing average life expectancy and medical care demand in developing countries. The World Health Organization reacts to this demand with global programs like the VISION 2020 "The right to sight" and the following Universal Eye Health within their Global Action Plan (2014-2019). One major point is to motivate companies and research institutes to make eye treatment cheaper and easily accessible. Therefore it becomes capital providing the ophthalmology market with cost competitive, simple and reliable technologies. Our laser is based on the direct second harmonic generation of the light emitted from a tapered laser diode and has already shown reliable optical performance. All components are produced in wafer scale processes and the resulting strong economy of scale results in a price competitive laser. In a broader perspective the technology behind our laser has a huge potential in non-medical applications like welding, cutting, marking and finally laser-illuminated projection.

  20. High-power diode-pumped AlGaAs surface-emitting laser.

    PubMed

    Holm, M A; Burns, D; Cusumano, P; Ferguson, A I; Dawson, M D

    1999-09-20

    We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at approximately 870 nm. By using a semiconductor Bragg reflector stack/multiple GaAs quantum well structure, mounted within a conventional laser cavity, we achieved single transverse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral range has been obtained. PMID:18324092

  1. Characterization of High-power Quasi-cw Laser Diode Arrays

    NASA Technical Reports Server (NTRS)

    Stephen, Mark A.; Vasilyev, Aleksey; Troupaki, Elisavet; Allan, Graham R.; Kashem, Nasir B.

    2005-01-01

    NASA s requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented.

  2. Industrial applications of high-power copper vapor lasers

    SciTech Connect

    Warner, B.E.; Boley, C.D.; Chang, J.J.; Dragon, E.P.; Havstad, M.A.; Martinez, M.; McLean, W. II

    1995-08-01

    A growing appreciation has developed in the last several years for the copper vapor laser because of its utility in ablating difficult materials at high rates. Laser ablation at high rates shows promise for numerous industrial applications such as thin film deposition, precision hole drilling, and machining of ceramics and other refractories.

  3. Research with high-power short-wavelength lasers.

    PubMed

    Holzrichter, J F; Campbell, E M; Lindl, J D; Storm, E

    1985-09-13

    Three high-temperature, high-density experments were conducted recently with the 10-terawatt, short-wavelength Novette laser system at the Lawrence Livermore National Laboratory. The experiments demonstrated successful solutions to problems that arose during previous laser-plasma interaction experiments with long-wavelength (greater than 1 micrometer) lasers: (i) large-scale plasmas, with dimensions approaching those needed for high-gain inertial fusion targets, were produced in which potentially deleterious laser-plasma instabilities were collisionally damped; (ii) deuterium-tritium fuel was imploded to a density of 20 grams per cubic centimeter and a pressure of 10(10) atmospheres under the improved laser conditions, and compression conditions (preheating and pressure) were consistent with code calculations that predict efficient (high-gain) burn of a large thermonuclear fuel mass when driven with a large, short-wavelength laser; and (iii) soft x-rays were amplified by a factor of 700 by stimulated emission at 206 and 209 angstroms (62 electron volts) from selenium ions in a laser-generated plasma. These small, short-pulse x-ray sources are 10(10) to 10(11) times brighter than the most powerful x-ray generators and synchrotron sources available today. The plasma conditions for these experiments were made possible by advances in Nd:glass laser technology, in techniques to generate efficiently its short-wavelength harmonics at 0.53, 0.35, and 0.26 micrometers, and in diagnostic and computational modeling. PMID:17753271

  4. Semiconductor Lasers and Their Application in Optical Fiber Communication.

    ERIC Educational Resources Information Center

    Agrawal, Govind P.

    1985-01-01

    Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

  5. High Power 938nm Cladding Pumped Fiber Laser

    SciTech Connect

    Dawson, J; Beach, R; Brobshoff, A; Liao, Z; Payne, S; Pennington, D; Taylor, L; Hackenberg, W; Bonaccini, D

    2002-12-26

    We have developed a Nd:doped cladding pumped fiber amplifier, which operates at 938nm with greater than 2W of output power. The core co-dopants were specifically chosen to enhance emission at 938nm. The fiber was liquid nitrogen cooled in order to achieve four-level laser operation on a laser transition that is normally three level at room temperature, thus permitting efficient cladding pumping of the amplifier. Wavelength selective attenuation was induced by bending the fiber around a mandrel, which permitted near complete suppression of amplified spontaneous emission at 1088nm. We are presently seeking to scale the output of this laser to 10W. We will discuss the fiber and laser design issues involved in scaling the laser to the 10W power level and present our most recent results.

  6. All solid-state high power visible laser

    NASA Technical Reports Server (NTRS)

    Grossman, William M.

    1993-01-01

    The overall objective of this Phase 2 effort was to develop and deliver to NASA a high repetition rate laser-diode-pumped solid-state pulsed laser system with output in the green portion of the spectrum. The laser is for use in data communications, and high efficiency, short pulses, and low timing jitter are important features. A short-pulse 1 micron laser oscillator, a new multi-pass amplifier to boost the infrared power, and a frequency doubler to take the amplified infrared pulsed laser light into the green. This produced 1.5 W of light in the visible at a pulse repetition rate of 20 kHz in the laboratory. The pulses have a full-width at half maximum of near 1 ns. The results of this program are being commercialized.

  7. Solar Pumped High Power Solid State Laser for Space Applications

    NASA Technical Reports Server (NTRS)

    Fork, Richard L.; Laycock, Rustin L.; Green, Jason J. A.; Walker, Wesley W.; Cole, Spencer T.; Frederick, Kevin B.; Phillips, Dane J.

    2004-01-01

    Highly coherent laser light provides a nearly optimal means of transmitting power in space. The simplest most direct means of converting sunlight to coherent laser light is a solar pumped laser oscillator. A key need for broadly useful space solar power is a robust solid state laser oscillator capable of operating efficiently in near Earth space at output powers in the multi hundred kilowatt range. The principal challenges in realizing such solar pumped laser oscillators are: (1) the need to remove heat from the solid state laser material without introducing unacceptable thermal shock, thermal lensing, or thermal stress induced birefringence to a degree that improves on current removal rates by several orders of magnitude and (2) to introduce sunlight at an effective concentration (kW/sq cm of laser cross sectional area) that is several orders of magnitude higher than currently available while tolerating a pointing error of the spacecraft of several degrees. We discuss strategies for addressing these challenges. The need to remove the high densities of heat, e.g., 30 kW/cu cm, while keeping the thermal shock, thermal lensing and thermal stress induced birefringence loss sufficiently low is addressed in terms of a novel use of diamond integrated with the laser material, such as Ti:sapphire in a manner such that the waste heat is removed from the laser medium in an axial direction and in the diamond in a radial direction. We discuss means for concentrating sunlight to an effective areal density of the order of 30 kW/sq cm. The method integrates conventional imaging optics, non-imaging optics and nonlinear optics. In effect we use a method that combines some of the methods of optical pumping solid state materials and optical fiber, but also address laser media having areas sufficiently large, e.g., 1 cm diameter to handle the multi-hundred kilowatt level powers needed for space solar power.

  8. Semiconductor Laser Low Frequency Noise Characterization

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Logan, Ronald T.

    1996-01-01

    This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

  9. High power diode laser stack development using gold-tin bonding technology

    NASA Astrophysics Data System (ADS)

    Hou, Dong; Wang, Jingwei; Zhang, Pu; Cai, Lei; Dai, Ye; Li, Yingjie; Liu, Xingsheng

    2015-02-01

    High power diode lasers have increased application in many fields. In this work, a sophisticated high power and high performance conduction cooled diode laser stack has been developed for long pulse duration and high duty cycle using gold-tin (AuSn) bonding technology. The transient thermal behavior and optical simulation of the laser diode stack module are investigated to optimize the laser device structure. CTE-matched submount and AuSn hard solder are used for bonding the laser diode bar to achieve higher reliability and longer lifetime. Guided by the numerical simulation and analytical results, conduction cooled diode laser stack with high power, long pulse duration and high duty cycle is fabricated and characterized. Compared with the conventional indium bonding technology, the new design is a promising approach to obtain improved performance with high reliability and long lifetime.

  10. Optical fiber cable for transmission of high power laser energy over great distances

    DOEpatents

    Zediker, Mark S.; Rinzler, Charles C.; Faircloth, Brian O.; Moxley, Joel F.; Koblick, Yeshaya

    2016-05-24

    There is provided a system and apparatus for the transmission of high power laser energy over great distances without substantial power loss and without the presence of stimulated Raman scattering. There is further provided systems and optical fiber cable configurations and optical fiber structures for the delivering high power laser energy over great distances to a tool or surface to perform an operation or work with the tool or upon the surface.