Semiconductor laser using multimode interference principle

NASA Astrophysics Data System (ADS)

Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

2018-01-01

Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

Semiconductor Laser Multi-Spectral Sensing and Imaging

PubMed Central

Le, Han Q.; Wang, Yang

2010-01-01

Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers. PMID:22315555

Semiconductor laser multi-spectral sensing and imaging.

PubMed

Le, Han Q; Wang, Yang

2010-01-01

Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

The 1.083 micron tunable CW semiconductor laser

NASA Technical Reports Server (NTRS)

Wang, C. S.; Chen, Jan-Shin; Lu, Ken-Gen; Ouyang, Keng

1991-01-01

A tunable CW laser is desired to produce light equivalent to the helium spectral line at 1.08 microns. This laser will serve as an optical pumping source for He-3 and He-4 atoms used in space magnetometers. This light source can be fabricated either as a semiconductor laser diode or a pumped solid state laser. Continuous output power of greater than 10 mW is desired. Semiconductor lasers can be thermally tuned, but must be capable of locking onto the helium resonance lines. Solid state lasers must have efficient pumping sources suitable for space configuration. Additional requirements are as follows: space magnetometer applications will include low mass (less than 0.5 kg), low power consumption (less than 0.75 W), and high stability/reliability for long missions (5-10 years).

High-power quantum-dot tapered tunable external-cavity lasers based on chirped and unchirped structures.

PubMed

Haggett, Stephanie; Krakowski, Michel; Montrosset, Ivo; Cataluna, Maria Ana

2014-09-22

A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor optical amplifier at its core is presented, enabling a record output power for a broadly tunable semiconductor laser source in the 1.2 - 1.3 µm spectral region. Two distinct optical amplifiers are investigated, using either chirped or unchirped quantum-dot structures, and their merits are compared, considering the combination of tunability and high output power generation. At 1230 nm, the chirped quantum-dot laser achieved a maximum power of 0.62 W and demonstrated nearly 100-nm tunability. The unchirped laser enabled a tunability range of 32 nm and at 1254 nm generated a maximum power of 0.97 W, representing a 22-fold increase in output power compared with similar narrow-ridge external-cavity lasers at the same current density.

Highly efficient and high-power diode-pumped femtosecond Yb:LYSO laser

NASA Astrophysics Data System (ADS)

Tian, Wenlong; Wang, Zhaohua; Zhu, Jiangfeng; Zheng, Lihe; Xu, Jun; Wei, Zhiyi

2017-04-01

A diode-pumped high-power femtosecond Yb:LYSO laser with high efficiency is demonstrated. With a semiconductor saturable absorber mirror for passive mode-locking and a Gires-Tournois interferometer mirror for intracavity dispersion compensation, stable mode-locking pulses of 297 fs duration at 1042 nm were obtained. The maximum average power of 3.07 W was realized under 5.17 W absorbed pump power, corresponding to as high as 59.4% opt-opt efficiency. The single pulse energy and peak power are about 35.5 nJ and 119.5 kW, respectively.

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deri, R J

2011-01-03

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and productionmore » capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a {approx} 200 {micro}s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost

Teradiode's high brightness semiconductor lasers

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

2016-03-01

TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, <0.08 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. Our TeraBlade industrial platform achieves world-record brightness levels for direct diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

NASA Astrophysics Data System (ADS)

Pierścińska, D.

2018-01-01

This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

NASA Technical Reports Server (NTRS)

Eegholm, Niels; Ott, Melanie; Stephen, Mark; Leidecker, Henning

2005-01-01

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to 50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at 50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths 10-200 (mu)s and with repetition rates of 10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Methods for determining optical power, for power-normalizing laser measurements, and for stabilizing power of lasers via compliance voltage sensing

DOEpatents

Taubman, Matthew S; Phillips, Mark C

2015-04-07

A method is disclosed for power normalization of spectroscopic signatures obtained from laser based chemical sensors that employs the compliance voltage across a quantum cascade laser device within an external cavity laser. The method obviates the need for a dedicated optical detector used specifically for power normalization purposes. A method is also disclosed that employs the compliance voltage developed across the laser device within an external cavity semiconductor laser to power-stabilize the laser mode of the semiconductor laser by adjusting drive current to the laser such that the output optical power from the external cavity semiconductor laser remains constant.

Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

NASA Astrophysics Data System (ADS)

Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

2018-02-01

The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications <1 um smile and >96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

Numerical simulations of novel high-power high-brightness diode laser structures

NASA Astrophysics Data System (ADS)

Boucke, Konstantin; Rogg, Joseph; Kelemen, Marc T.; Poprawe, Reinhart; Weimann, Guenter

2001-07-01

One of the key topics in today's semiconductor laser development activities is to increase the brightness of high-power diode lasers. Although structures showing an increased brightness have been developed specific draw-backs of these structures lead to a still strong demand for investigation of alternative concepts. Especially for the investigation of basically novel structures easy-to-use and fast simulation tools are essential to avoid unnecessary, cost and time consuming experiments. A diode laser simulation tool based on finite difference representations of the Helmholtz equation in 'wide-angle' approximation and the carrier diffusion equation has been developed. An optimized numerical algorithm leads to short execution times of a few seconds per resonator round-trip on a standard PC. After each round-trip characteristics like optical output power, beam profile and beam parameters are calculated. A graphical user interface allows online monitoring of the simulation results. The simulation tool is used to investigate a novel high-power, high-brightness diode laser structure, the so-called 'Z-Structure'. In this structure an increased brightness is achieved by reducing the divergency angle of the beam by angular filtering: The round trip path of the beam is two times folded using internal total reflection at surfaces defined by a small index step in the semiconductor material, forming a stretched 'Z'. The sharp decrease of the reflectivity for angles of incidence above the angle of total reflection leads to a narrowing of the angular spectrum of the beam. The simulations of the 'Z-Structure' indicate an increase of the beam quality by a factor of five to ten compared to standard broad-area lasers.

Superfocusing of mutimode semiconductor lasers and light-emitting diodes

NASA Astrophysics Data System (ADS)

Sokolovskii, G. S.; Dudelev, V. V.; Losev, S. N.; Deryagin, A. G.; Kuchinskii, V. I.; Sibbett, W.; Rafailov, E. U.

2012-05-01

The problem of focusing multimode radiation of high-power semiconductor lasers and light-emitting diodes (LEDs) has been studied. In these sources, low spatial quality of the output beam determines theoretical limit of the focal spot size (one to two orders of magnitude exceeding the diffraction limit), thus restricting the possibility of increasing power density and creating optical field gradients that are necessary in many practical applications. In order to overcome this limitation, we have developed a method of superfocusing of multimode radiation with the aid of interference. It is shown that, using this method, the focal spot size of high-power semiconductor lasers and LEDs can be reduced to a level unachievable by means of traditional focusing. An approach to exceed the theoretical limit of power density for focusing of radiation with high propagation parameter M 2 is proposed.

Blue 450nm high power semiconductor continuous wave laser bars exceeding rollover output power of 80W

NASA Astrophysics Data System (ADS)

König, H.; Lell, A.; Stojetz, B.; Ali, M.; Eichler, C.; Peter, M.; Löffler, A.; Strauss, U.; Baumann, M.; Balck, A.; Malchus, J.; Krause, V.

2018-02-01

Industrial material processing like cutting or welding of metals is rather energy efficient using direct diode or diode pumped solid state lasers. However, many applications cannot be addressed by established infrared laser technology due to fundamental material properties of the workpiece: For example materials like copper or gold have too low absorption in the near infrared wavelength range to be processed efficiently by use of existing high power laser systems. The huge interest to enable high power kW systems with more suitable wavelengths in the blue spectral range triggered the German funded research project 'BLAULAS': Therein the feasibility and capability of CW operating high power laser bars based on the GaN material system was investigated by Osram and Laserline. High performance bars were enabled by defeating fundamental challenges like material quality as well as the chip processes, both of which differ significantly from well-known IR laser bars. The research samples were assembled on actively cooled heat sinks with hard solder technology. For the first time an output power of 98W per bar at 60A drive current was achieved. Conversion efficiency as high as 46% at 50W output power was demonstrated.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, Jr., Richard P.; Crawford, Mary H.

1996-01-01

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Semiconductor Laser Low Frequency Noise Characterization

NASA Technical Reports Server (NTRS)

Maleki, Lute; Logan, Ronald T.

1996-01-01

This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

Ultrafast Modulation of Semiconductor Lasers Through a Terahertz Field

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Hughes, Steven; Citrin, David

1998-01-01

We demonstrate, by means of numerical simulation, a new mechanism to modulate and switch semiconductor lasers at THz and sub-THz frequency rates. A sinusoidal terahertz field applied to a semiconductor laser heats the electron-hole plasma and consequently modifies the optical susceptibility. This allows an almost linear modulation of the output power of tile semiconductor laser and leads to a faithful reproduction of the terahertz-field waveform in the emitted laser intensity.

Large-area high-power VCSEL pump arrays optimized for high-energy lasers

NASA Astrophysics Data System (ADS)

Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

2012-06-01

Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

PCF based high power narrow line width pulsed fiber laser

NASA Astrophysics Data System (ADS)

Chen, H.; Yan, P.; Xiao, Q.; Wang, Y.; Gong, M.

2012-09-01

Based on semiconductor diode seeded multi-stage cascaded fiber amplifiers, we have obtained 88-W average power of a 1063-nm laser with high repetition rate of up to 1.5 MHz and a constant 2-ns pulse duration. No stimulated Brillouin scattering pulse or optical damage occurred although the maximum pulse peak power has exceeded 112 kW. The output laser exhibits excellent beam quality (M2x = 1.24 and M2y = 1.18), associated with a spectral line width as narrow as 0.065 nm (FWHM). Additionally, we demonstrate high polarization extinction ratio of 18.4 dB and good pulse stabilities superior to 1.6 % (RMS).

High temperature semiconductor diode laser pumps for high energy laser applications

NASA Astrophysics Data System (ADS)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

Semiconductor Lasers and Their Application in Optical Fiber Communication.

ERIC Educational Resources Information Center

Agrawal, Govind P.

1985-01-01

Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

High-power diode laser modules from 410 nm to 2200 nm

NASA Astrophysics Data System (ADS)

Köhler, Bernd; Kissel, Heiko; Flament, Marco; Wolf, Paul; Brand, Thomas; Biesenbach, Jens

2010-02-01

In this work we report on high-power diode laser modules covering a wide spectral range from 410 nm to 2200 nm. Driven by improvements in the technology of diode laser bars with non-standard wavelengths, such systems are finding a growing number of applications. Fields of application that benefit from these developments are direct medical applications, printing industry, defense technology, polymer welding and pumping of solid-sate lasers. Diode laser bars with standard wavelengths from 800 - 1000 nm are based on InGaAlAs, InGaAlP, GaAsP or InGaAs semiconductor material with an optical power of more than 100 W per bar. For shorter wavelengths from 630 - 690 nm InGaAlP semiconductor material is used with an optical power of about 5 W per bar. Extending the wavelength range beyond 1100 nm is realized by using InGaAs on InP substrates or with InAs quantum dots embedded in GaAs for wavelengths up to 1320 nm and (AlGaIn)(AsSb) for wavelengths up to 2200 nm. In these wavelength ranges the output power per bar is about 6 - 20 W. In this paper we present a detailed characterization of these diode laser bars, including measurements of power, spectral data and life time data. In addition, we will show different fiber coupled modules, ranging from 638 nm with 13 W output power (400 μm fiber, NA 0.22) up to 1940 nm with more than 50 W output power (600 μm fiber NA 0.22).

Delay induced high order locking effects in semiconductor lasers

NASA Astrophysics Data System (ADS)

Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

Delay induced high order locking effects in semiconductor lasers.

PubMed

Kelleher, B; Wishon, M J; Locquet, A; Goulding, D; Tykalewicz, B; Huyet, G; Viktorov, E A

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types--a quantum dot based device and a quantum well based device-are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

Key techniques for space-based solar pumped semiconductor lasers

NASA Astrophysics Data System (ADS)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

High-Performance Power-Semiconductor Packages

NASA Technical Reports Server (NTRS)

Renz, David; Hansen, Irving; Berman, Albert

1989-01-01

A 600-V, 50-A transistor and 1,200-V, 50-A diode in rugged, compact, lightweight packages intended for use in inverter-type power supplies having switching frequencies up to 20 kHz. Packages provide low-inductance connections, low loss, electrical isolation, and long-life hermetic seal. Low inductance achieved by making all electrical connections to each package on same plane. Also reduces high-frequency losses by reducing coupling into inherent shorted turns in packaging material around conductor axes. Stranded internal power conductors aid conduction at high frequencies, where skin effect predominates. Design of packages solves historical problem of separation of electrical interface from thermal interface of high-power semiconductor device.

Toward realizing high power semiconductor terahertz laser sources at room temperature

NASA Astrophysics Data System (ADS)

Razeghi, Manijeh

2011-05-01

The terahertz (THz) spectral range offers promising applications in science, industry, and military. THz penetration through nonconductors (fabrics, wood, plastic) enables a more efficient way of performing security checks (for example at airports), as illegal drugs and explosives could be detected. Being a non-ionizing radiation, THz radiation is environment-friendly enabling a safer analysis environment than conventional X-ray based techniques. However, the lack of a compact room temperature THz laser source greatly hinders mass deployment of THz systems in security check points and medical centers. In the past decade, tremendous development has been made in GaAs/AlGaAs based THz Quantum Cascade Laser (QCLs), with maximum operating temperatures close to 200 K (without magnetic field). However, higher temperature operation is severely limited by a small LO-phonon energy (~ 36 meV) in this material system. With a much larger LO-phonon energy of ~ 90 meV, III-Nitrides are promising candidates for room temperature THz lasers. However, realizing high quality material for GaN-based intersubband devices presents a significant challenge. Advances with this approach will be presented. Alternatively, recent demonstration of InP based mid-infrared QCLs with extremely high peak power of 120 W at room temperature opens up the possibility of producing high power THz emission with difference frequency generation through two mid-infrared wavelengths.

Bidirectional chaos communication between two outer semiconductor lasers coupled mutually with a central semiconductor laser.

PubMed

Li, Ping; Wu, Jia-Gui; Wu, Zheng-Mao; Lin, Xiao-Dong; Deng, Dao; Liu, Yu-Ran; Xia, Guang-Qiong

2011-11-21

Based on a linear chain composed of a central semiconductor laser and two outer semiconductor lasers, chaos synchronization and bidirectional communication between two outer lasers have been investigated under the case that the central laser and the two outer lasers are coupled mutually, whereas there exists no coupling between the two outer lasers. The simulation results show that high-quality and stable isochronal synchronization between the two outer lasers can be achieved, while the cross-correlation coefficients between the two outer lasers and the central laser are very low under proper operation condition. Based on the high performance chaos synchronization between the two outer lasers, message bidirectional transmissions of bit rates up to 20 Gbit/s can be realized through adopting a novel decoding scheme which is different from that based on chaos pass filtering effect. Furthermore, the security of bidirectional communication is also analyzed. © 2011 Optical Society of America

E-beam-pumped semiconductor lasers

NASA Astrophysics Data System (ADS)

Rice, Robert R.; Shanley, James F.; Ruggieri, Neil F.

1995-04-01

The collapse of the Soviet Union opened many areas of laser technology to the West. E-beam- pumped semiconductor lasers (EBSL) were pursued for 25 years in several Soviet Institutes. Thin single crystal screens of II-VI alloys (ZnxCd1-xSe, CdSxSe1-x) were incorporated in laser CRTs to produce scanned visible laser beams at average powers greater than 10 W. Resolutions of 2500 lines were demonstrated. MDA-W is conducting a program for ARPA/ESTO to assess EBSL technology for high brightness, high resolution RGB laser projection application. Transfer of II-VI crystal growth and screen processing technology is underway, and initial results will be reported. Various techniques (cathodoluminescence, one- and two-photon laser pumping, etc.) have been used to assess material quality and screen processing damage. High voltage (75 kV) video electronics were procured in the U.S. to operate test EBSL tubes. Laser performance was documented as a function of screen temperature, beam voltage and current. The beam divergence, spectrum, efficiency and other characteristics of the laser output are being measured. An evaluation of the effect of laser operating conditions upon the degradation rate is being carried out by a design-of-experiments method. An initial assessment of the projected image quality will be performed.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, R.P. Jr.; Crawford, M.H.

1996-09-17

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

Two-photon fluorescence bioimaging with an all-semiconductor laser picosecond pulse source.

PubMed

Kuramoto, Masaru; Kitajima, Nobuyoshi; Guo, Hengchang; Furushima, Yuji; Ikeda, Masao; Yokoyama, Hiroyuki

2007-09-15

We have demonstrated successful two-photon excitation fluorescence bioimaging using a high-power pulsed all-semiconductor laser. Toward this purpose, we developed a pulsed light source consisting of a mode-locked laser diode and a two-stage diode laser amplifier. This pulsed light source provided optical pulses of 5 ps duration and having a maximum peak power of over 100 W at a wavelength of 800 nm and a repetition frequency of 500 MHz.

REVIEW ARTICLE: Harmonically mode-locked semiconductor-based lasers as high repetition rate ultralow noise pulse train and optical frequency comb sources

NASA Astrophysics Data System (ADS)

Quinlan, F.; Ozharar, S.; Gee, S.; Delfyett, P. J.

2009-10-01

Recent experimental work on semiconductor-based harmonically mode-locked lasers geared toward low noise applications is reviewed. Active, harmonic mode-locking of semiconductor-based lasers has proven to be an excellent way to generate 10 GHz repetition rate pulse trains with pulse-to-pulse timing jitter of only a few femtoseconds without requiring active feedback stabilization. This level of timing jitter is achieved in long fiberized ring cavities and relies upon such factors as low noise rf sources as mode-lockers, high optical power, intracavity dispersion management and intracavity phase modulation. When a high finesse etalon is placed within the optical cavity, semiconductor-based harmonically mode-locked lasers can be used as optical frequency comb sources with 10 GHz mode spacing. When active mode-locking is replaced with regenerative mode-locking, a completely self-contained comb source is created, referenced to the intracavity etalon.

Reliable high-power injection locked 6kHz 60W laser for ArF immersion lithography

NASA Astrophysics Data System (ADS)

Watanabe, Hidenori; Komae, Shigeo; Tanaka, Satoshi; Nohdomi, Ryoichi; Yamazaki, Taku; Nakarai, Hiroaki; Fujimoto, Junichi; Matsunaga, Takashi; Saito, Takashi; Kakizaki, Kouji; Mizoguchi, Hakaru

2007-03-01

Reliable high power 193nm ArF light source is desired for the successive growth of ArF-immersion technology for 45nm node generation. In 2006, Gigaphoton released GT60A, high power injection locked 6kHz/60W/0.5pm (E95) laser system, to meet the demands of semiconductor markets. In this paper, we report key technologies for reliable mass production GT laser systems and GT60A high durability performance test results up to 20 billion pulses.

On the possibility of using the dynamic Franz - Keldysh effect to detect the parameters of high-power IR laser radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grigor'ev, A M

2011-05-31

The increase in the absorption of light by a semiconductor (when the light photon energy is somewhat smaller than the semiconductor bandgap or equals it) in the presence of a strong light wave (for which the semiconductor is transparent) has been investigated. The possibility of designing novel light detectors for measuring the energy parameters and spatial and temporal characteristics of high-power IR laser radiation is demonstrated. (measurement of laser radiation parameters)

High peak power solid-state laser for micromachining of hard materials

NASA Astrophysics Data System (ADS)

Herbst, Ludolf; Quitter, John P.; Ray, Gregory M.; Kuntze, Thomas; Wiessner, Alexander O.; Govorkov, Sergei V.; Heglin, Mike

2003-06-01

Laser micromachining has become a key enabling technology in the ever-continuing trend of miniaturization in microelectronics, micro-optics, and micromechanics. New applications have become commercially viable due to the emergence of innovative laser sources, such as diode pumped solid-state lasers (DPSSL), and the progress in processing technology. Examples of industrial applications are laser-drilled micro-injection nozzles for highly efficient automobile engines, or manufacturing of complex spinnerets for production of synthetic fibers. The unique advantages of laser-based techniques stem from their ability to produce high aspect ratio holes, while yielding low heat affected zones with exceptional surface quality, roundness and taper tolerances. Additionally, the ability to drill blind holes and slots in very hard materials such as diamond, silicon, sapphire, ceramics and steel is of great interest for many applications in microelectronics, semiconductor and automotive industry. This kind of high quality, high aspect ratio micromachining requires high peak power and short pulse durations.

Optical Frequency Optimization of a High Intensity Laser Power Beaming System Utilizing VMJ Photovoltaic Cells

NASA Technical Reports Server (NTRS)

Raible, Daniel E.; Dinca, Dragos; Nayfeh, Taysir H.

2012-01-01

An effective form of wireless power transmission (WPT) has been developed to enable extended mission durations, increased coverage and added capabilities for both space and terrestrial applications that may benefit from optically delivered electrical energy. The high intensity laser power beaming (HILPB) system enables long range optical 'refueling" of electric platforms such as micro unmanned aerial vehicles (MUAV), airships, robotic exploration missions and spacecraft platforms. To further advance the HILPB technology, the focus of this investigation is to determine the optimal laser wavelength to be used with the HILPB receiver, which utilizes vertical multi-junction (VMJ) photovoltaic cells. Frequency optimization of the laser system is necessary in order to maximize the conversion efficiency at continuous high intensities, and thus increase the delivered power density of the HILPB system. Initial spectral characterizations of the device performed at the NASA Glenn Research Center (GRC) indicate the approximate range of peak optical-to-electrical conversion efficiencies, but these data sets represent transient conditions under lower levels of illumination. Extending these results to high levels of steady state illumination, with attention given to the compatibility of available commercial off-the-shelf semiconductor laser sources and atmospheric transmission constraints is the primary focus of this paper. Experimental hardware results utilizing high power continuous wave (CW) semiconductor lasers at four different operational frequencies near the indicated band gap of the photovoltaic VMJ cells are presented and discussed. In addition, the highest receiver power density achieved to date is demonstrated using a single photovoltaic VMJ cell, which provided an exceptionally high electrical output of 13.6 W/sq cm at an optical-to-electrical conversion efficiency of 24 percent. These results are very promising and scalable, as a potential 1.0 sq m HILPB receiver of

Development of optically pumped DBR-free semiconductor disk lasers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Yang, Zhou; Albrecht, Alexander R.; Cederberg, Jeffrey G.; Sheik-Bahae, Mansoor

2017-03-01

Semiconductor disk lasers (SDLs) are attractive for applications requiring good beam quality, wavelength versatility, and high output powers. Typical SDLs utilize the active mirror geometry, where a semiconductor DBR is integrated with the active region by growth or post-growth bonding. This imposes restrictions for the SDL design, like material system choice, thermal management, and effective gain bandwidth. In DBR-free geometry, these restrictions can be alleviated. An integrated gain model predicts DBR-free geometry with twice the gain bandwidth of typical SDLs, which has been experimentally verified with active regions near 1 μm and 1.15 μm. The lift-off and bonding technique enables the integration of semiconductor active regions with arbitrary high quality substrates, allowing novel monolithic geometries. Bonding an active region onto a straight side of a commercial fused silica right angle prism, and attaching a high reflectivity mirror onto the hypotenuse side, with quasi CW pumping at 780 nm, lasing operation was achieved at 1037 nm with 0.2 mW average power at 1.6 mW average pump power. Laser dynamics show that thermal lens generation in the active region bottlenecks the laser efficiency. Investigations on total internal reflection based monolithic ring cavities are ongoing. These geometries would allow the intracavity integration of 2D materials or other passive absorbers, which could be relevant for stable mode locking. Unlike typical monolithic microchip SDLs, with the evanescent wave coupling technique, these monolithic geometries allow variable coupling efficiency.

Optimum design on refrigeration system of high-repetition-frequency laser

NASA Astrophysics Data System (ADS)

Li, Gang; Li, Li; Jin, Yezhou; Sun, Xinhua; Mao, Shaojuan; Wang, Yuanbo

2014-12-01

A refrigeration system with fluid cycle, semiconductor cooler and air cooler is designed to solve the problems of thermal lensing effect and unstable output of high-repetition-frequency solid-state lasers. Utilizing a circulating water pump, water recycling system carries the water into laser cavity to absorb the heat then get to water cooling head. The water cooling head compacts cold spot of semiconductor cooling chips, so the heat is carried to hot spot which contacts the radiating fins, then is expelled through cooling fan. Finally, the cooled water return to tank. The above processes circulate to achieve the purposes of highly effective refrigeration in miniative solid-state lasers.The refrigeration and temperature control components are designed strictly to ensure refrigeration effect and practicability. we also set up a experiment to test the performances of this refrigeration system, the results show that the relationship between water temperature and cooling power of semiconductor cooling chip is linear at 20°C-30°C (operating temperature range of Nd:YAG), the higher of the water temperature, the higher of cooling power. According to the results, cooling power of single semiconductor cooling chip is above 60W, and the total cooling power of three semiconductor cooling chips achieves 200W that will satisfy the refrigeration require of the miniative solid-state lasers.The performance parameters of laser pulse are also tested, include pulse waveform, spectrogram and laser spot. All of that indicate that this refrigeration system can ensure the output of high-repetition-frequency pulse whit high power and stability.

N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eliseev, P G

2012-12-31

A survey is presented of works on creation and investigation of semiconductor lasers during 1957 - 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

DOEpatents

Hohimer, John P.

1994-01-01

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

DOEpatents

Hohimer, J.P.

1994-06-07

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure. 6 figs.

Optics assembly for high power laser tools

DOEpatents

Fraze, Jason D.; Faircloth, Brian O.; Zediker, Mark S.

2016-06-07

There is provided a high power laser rotational optical assembly for use with, or in high power laser tools for performing high power laser operations. In particular, the optical assembly finds applications in performing high power laser operations on, and in, remote and difficult to access locations. The optical assembly has rotational seals and bearing configurations to avoid contamination of the laser beam path and optics.

Influence of resonator length on catastrophic optical damage in high-power AlGaInP broad-area lasers

NASA Astrophysics Data System (ADS)

Bou Sanayeh, Marwan

2017-05-01

The increasing importance of extracting high optical power out of semiconductor lasers motivated several studies in catastrophic optical damage (COD) level improvement. In this study, the influence of the resonator length in high-power broad-area (BA) AlGaInP lasers on COD is presented. For the analyses, several 638 nm AlGaInP 60 μm BA lasers from the same wafer were used. Resonator lengths of 900, 1200, 1500, and 1800 μm were compared. In order to independently examine the effect of the resonator length on the maximum power reached by the lasers before COD (PCOD), the lasers used are uncoated and unmounted, and PCOD under pulsed mode was determined. It was found that higher output powers and eventually higher PCOD can be achieved using longer resonators; however, it was also found that this is mainly useful when working at high output powers far away from the laser threshold, since the threshold current and slope efficiency worsen when the resonator length increases.

Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers.

PubMed

Chen, Shaoqiang; Diao, Shengxi; Li, Pengtao; Nakamura, Takahiro; Yoshita, Masahiro; Weng, Guoen; Hu, Xiaobo; Shi, Yanling; Liu, Yiqing; Akiyama, Hidefumi

2017-07-31

High power pulsed lasers with tunable pulse widths are highly favored in many applications. When combined with power amplification, gain-switched semiconductor lasers driven by broadband tunable electric pulsers can meet such requirements. For this reason, we designed and produced a low-cost integrated CMOS pulse generator with a minimum pulse width of 80 ps and a wide tuning range of up to 270 ns using a 40-nm microelectronic process technique. We used this pulser to drive a 1.3-µm semiconductor laser diode directly, and thereafter investigated the gain-switching properties of the laser system. The optical pulses consist of a spike followed by a steady state region. Tuning the width of the electrical pulse down to approximately 1.5 ns produces optical pulses consisting only of the spike, which has a minimum pulse-width of 100 ps. Moreover, the duration of the steady state can be tuned continuously by tuning the electrical pulse width, with a peak power of approximately 5 mW. The output voltage of the electric pulser has a tuning range of 0.8-1.5 V that can be used to directly drive semiconductor laser diodes with wavelengths in the near-infrared spectrum, which are suitable for power amplification with rare-earth doped fiber amplifiers.

High power gas laser - Applications and future developments

NASA Technical Reports Server (NTRS)

Hertzberg, A.

1977-01-01

Fast flow can be used to create the population inversion required for lasing action, or can be used to improve laser operation, for example by the removal of waste heat. It is pointed out that at the present time all lasers which are capable of continuous high-average power employ flow as an indispensable aspect of operation. High power laser systems are discussed, taking into account the gasdynamic laser, the HF supersonic diffusion laser, and electric discharge lasers. Aerodynamics and high power lasers are considered, giving attention to flow effects in high-power gas lasers, aerodynamic windows and beam manipulation, and the Venus machine. Applications of high-power laser technology reported are related to laser material working, the employment of the laser in controlled fusion machines, laser isotope separation and photochemistry, and laser power transmission.

Design and comparison of laser windows for high-power lasers

NASA Astrophysics Data System (ADS)

Niu, Yanxiong; Liu, Wenwen; Liu, Haixia; Wang, Caili; Niu, Haisha; Man, Da

2014-11-01

High-power laser systems are getting more and more widely used in industry and military affairs. It is necessary to develop a high-power laser system which can operate over long periods of time without appreciable degradation in performance. When a high-energy laser beam transmits through a laser window, it is possible that the permanent damage is caused to the window because of the energy absorption by window materials. So, when we design a high-power laser system, a suitable laser window material must be selected and the laser damage threshold of the window must be known. In this paper, a thermal analysis model of high-power laser window is established, and the relationship between the laser intensity and the thermal-stress field distribution is studied by deducing the formulas through utilizing the integral-transform method. The influence of window radius, thickness and laser intensity on the temperature and stress field distributions is analyzed. Then, the performance of K9 glass and the fused silica glass is compared, and the laser-induced damage mechanism is analyzed. Finally, the damage thresholds of laser windows are calculated. The results show that compared with K9 glass, the fused silica glass has a higher damage threshold due to its good thermodynamic properties. The presented theoretical analysis and simulation results are helpful for the design and selection of high-power laser windows.

Designing new classes of high-power, high-brightness VECSELs

NASA Astrophysics Data System (ADS)

Moloney, J. V.; Zakharian, A. R.; Hader, J.; Koch, Stephan W.

2005-10-01

Optically-pumped vertical external cavity semiconductor lasers offer the exciting possibility of designing kW-class solid state lasers that provide significant advantages over their doped YAG, thin-disk YAG and fiber counterparts. The basic VECSEL/OPSL (optically-pumped semiconductor laser) structure consists of a very thin (approximately 6 micron thick) active mirror consisting of a DBR high-reflectivity stack followed by a multiple quantum well resonant periodic (RPG) structure. An external mirror (reflectivity typically between 94%-98%) provides conventional optical feedback to the active semiconductor mirror chip. The "cold" cavity needs to be designed to take into account the semiconductor sub-cavity resonance shift with temperature and, importantly, the more rapid shift of the semiconductor material gain peak with temperature. Thermal management proves critical in optimizing the device for serious power scaling. We will describe a closed-loop procedure that begins with a design of the semiconductor active epi structure. This feeds into the sub-cavity optimization, optical and thermal transport within the active structure and thermal transport though the various heat sinking elements. Novel schemes for power scaling beyond current record performances will be discussed.

Electro-optically cavity dumped 2 μm semiconductor disk laser emitting 3 ns pulses of 30 W peak power

NASA Astrophysics Data System (ADS)

Kaspar, Sebastian; Rattunde, Marcel; Töpper, Tino; Schwarz, Ulrich T.; Manz, Christian; Köhler, Klaus; Wagner, Joachim

2012-10-01

A 2 μm electro-optically cavity-dumped semiconductor disk laser (SDL) with a pulse full width at half maximum of 3 ns, a pulse peak power of 30 W, and repetition rates adjustable between 87 kHz and 1 MHz is reported. For ns-pulse cavity dumping the SDL was set up with a 35-cm long cavity into which an intra-cavity Brewster-angled polarizer prism and a Pockels cell for rotation of the linear polarization were inserted. By means of internal total reflection in the birefringent polarizer, pulses are coupled out of the cavity sideways. This variant of ns-pulse 2-μm SDL is well suited for applications such as high-precision light detection and ranging or ns-pulse laser materials processing after further power amplification.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

PubMed

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation

PubMed Central

Wan, W. J.; Li, H.; Zhou, T.; Cao, J. C.

2017-01-01

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification. PMID:28272492

The high-power iodine laser

NASA Astrophysics Data System (ADS)

Brederlow, G.; Fill, E.; Witte, K. J.

The book provides a description of the present state of the art concerning the iodine laser, giving particular attention to the design and operation of pulsed high-power iodine lasers. The basic features of the laser are examined, taking into account aspects of spontaneous emission lifetime, hyperfine structure, line broadening and line shifts, stimulated emission cross sections, the influence of magnetic fields, sublevel relaxation, the photodissociation of alkyl iodides, flashlamp technology, excitation in a direct discharge, chemical excitation, and questions regarding the chemical kinetics of the photodissociation iodine laser. The principles of high-power operation are considered along with aspects of beam quality and losses, the design and layout of an iodine laser system, the scalability and prospects of the iodine laser, and the design of the single-beam Asterix III laser.

High-power lasers for directed-energy applications.

PubMed

Sprangle, Phillip; Hafizi, Bahman; Ting, Antonio; Fischer, Richard

2015-11-01

In this article, we review and discuss the research programs at the Naval Research Laboratory (NRL) on high-power lasers for directed-energy (DE) applications in the atmosphere. Physical processes affecting propagation include absorption/scattering, turbulence, and thermal blooming. The power levels needed for DE applications require combining a number of lasers. In atmospheric turbulence, there is a maximum intensity that can be placed on a target that is independent of the initial beam spot size and laser beam quality. By combining a number of kW-class fiber lasers, scientists at the NRL have successfully demonstrated high-power laser propagation in a turbulent atmosphere and wireless recharging. In the NRL experiments, four incoherently combined fiber lasers having a total power of 5 kW were propagated to a target 3.2 km away. These successful high-power experiments in a realistic atmosphere formed the basis of the Navy's Laser Weapon System. We compare the propagation characteristics of coherently and incoherently combined beams without adaptive optics. There is little difference in the energy on target between coherently and incoherently combined laser beams for multi-km propagation ranges and moderate to high levels of turbulence. Unlike incoherent combining, coherent combining places severe constraints on the individual lasers. These include the requirement of narrow power spectral linewidths in order to have long coherence times as well as polarization alignment of all the lasers. These requirements are extremely difficult for high-power lasers.

1.3-microm optically-pumped semiconductor disk laser by wafer fusion.

PubMed

Lyytikäinen, Jari; Rautiainen, Jussi; Toikkanen, Lauri; Sirbu, Alexei; Mereuta, Alexandru; Caliman, Andrei; Kapon, Eli; Okhotnikov, Oleg G

2009-05-25

We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 microm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 degrees C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures.

Ultralow-jitter and -amplitude-noise semiconductor-based actively mode-locked laser.

PubMed

Quinlan, Franklyn; Gee, Sangyoun; Ozharar, Sarper; Delfyett, Peter J

2006-10-01

We report a semiconductor-based, low-noise, 10.24 GHz actively mode-locked laser with 4.65 fs of relative timing jitter and a 0.0365% amplitude fluctuation (1 Hz to 100 MHz) of the optical pulse train. The keys to obtaining this result were the laser's high optical power and the low phase noise of the rf source used to mode lock the laser. The low phase noise of the rf source not only improves the absolute and relative timing jitter of the laser, but also prevents coupling of the rf source phase noise to the pulse amplitude fluctuations by the mode-locked laser.

Ceramics for High Power Lasers

DTIC Science & Technology

2013-07-01

139-144 (Wiley, 2009). [22] M.F. Becker, D.J. Kuizenga, A.E. Siegman , “Harmonic Mode Locking of the Nd:YAG Laser ,” IEEE Journal of Quantum...AFRL-OSR-VA-TR-2013-0347 Ceramics for High Power Lasers R.L. Byer, R.M. Gaume, R.K. Route, C. Rudy Stanford University July...To) 05-15-2010 to 05-15-2013 4. TITLE AND SUBTITLE Ceramics for High Power Lasers 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA9550-10-1-0227

Semiconductor lasers for versatile applications from global communications to on-chip interconnects

NASA Astrophysics Data System (ADS)

Arai, Shigehisa

2015-01-01

Since semiconductor lasers were realized in 1962, various efforts have been made to enrich human life thorough novel equipments and services. Among them optical fiber communications in global communications have brought out marvelous information technology age represented by the internet. In this paper, emerging topics made on GaInAsP/InP based long-wavelength lasers toward ultra-low power consumption semiconductor lasers for optical interconnects in supercomputers as well as in future LSIs are presented.

A High Power Frequency Doubled Fiber Laser

NASA Technical Reports Server (NTRS)

Thompson, Robert J.; Tu, Meirong; Aveline, Dave; Lundblad, Nathan; Maleki, Lute

2003-01-01

This viewgraph presentation reports on the development of a high power 780 nm laser suitable for space applications of laser cooling. A possible solution is to use frequency doubling of high power 1560 nm telecom lasers. The presentation shows a diagram of the frequency conversion, and a graph of the second harmonic generation in one crystal, and the use of the cascading crystals. Graphs show the second harmonic power as a function of distance between crystals, second harmonic power vs. pump power, tunability of laser systems.

Numerical study of wavelength-swept semiconductor ring lasers: the role of refractive-index nonlinearities in semiconductor optical amplifiers and implications for biomedical imaging applications.

PubMed

Bilenca, A; Yun, S H; Tearney, G J; Bouma, B E

2006-03-15

Recent results have demonstrated unprecedented wavelength-tuning speed and repetition rate performance of semiconductor ring lasers incorporating scanning filters. However, several unique operational characteristics of these lasers have not been adequately explained, and the lack of an accurate model has hindered optimization. We numerically investigated the characteristics of these sources, using a semiconductor optical amplifier (SOA) traveling-wave Langevin model, and found good agreement with experimental measurements. In particular, we explored the role of the SOA refractive-index nonlinearities in determining the intracavity frequency-shift-broadening and the emitted power dependence on scan speed and direction. Our model predicts both continuous-wave and pulse operation and shows a universal relationship between the output power of lasers that have different cavity lengths and the filter peak frequency shift per round trip, therefore revealing the advantage of short cavities for high-speed biomedical imaging.

Toward continuous-wave operation of organic semiconductor lasers

PubMed Central

Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

2017-01-01

The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

Toward continuous-wave operation of organic semiconductor lasers.

PubMed

Sandanayaka, Atula S D; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

2017-04-01

The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi-continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture.

High speed micromachining with high power UV laser

NASA Astrophysics Data System (ADS)

Patel, Rajesh S.; Bovatsek, James M.

2013-03-01

Increasing demand for creating fine features with high accuracy in manufacturing of electronic mobile devices has fueled growth for lasers in manufacturing. High power, high repetition rate ultraviolet (UV) lasers provide an opportunity to implement a cost effective high quality, high throughput micromachining process in a 24/7 manufacturing environment. The energy available per pulse and the pulse repetition frequency (PRF) of diode pumped solid state (DPSS) nanosecond UV lasers have increased steadily over the years. Efficient use of the available energy from a laser is important to generate accurate fine features at a high speed with high quality. To achieve maximum material removal and minimal thermal damage for any laser micromachining application, use of the optimal process parameters including energy density or fluence (J/cm2), pulse width, and repetition rate is important. In this study we present a new high power, high PRF QuasarR 355-40 laser from Spectra-Physics with TimeShiftTM technology for unique software adjustable pulse width, pulse splitting, and pulse shaping capabilities. The benefits of these features for micromachining include improved throughput and quality. Specific example and results of silicon scribing are described to demonstrate the processing benefits of the Quasar's available power, PRF, and TimeShift technology.

Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser

NASA Astrophysics Data System (ADS)

Qing, Ke; Shaoyang, Tan; Songtao, Liu; Dan, Lu; Ruikang, Zhang; Wei, Wang; Chen, Ji

2015-09-01

A comprehensive design optimization of 1.55-μm high power InGaAsP/InP board area lasers is performed aiming at increasing the internal quantum efficiency (ηi) while maintaining the low internal loss (αi) of the device, thereby achieving high power operation. Four different waveguide structures of broad area lasers were fabricated and characterized in depth. Through theoretical analysis and experiment verifications, we show that laser structures with stepped waveguide and thin upper separate confinement layer will result in high ηi and overall slope efficiency. A continuous wave (CW) single side output power of 160 mW was obtained for an uncoated laser with a 50-μm active area width and 1 mm cavity length. Project supported by the National Natural Science Foundation of China (Nos. 61274046, 61201103) and the National High Technology Research and Development Program of China (No. 2013AA014202).

High power diode lasers for solid-state laser pumps

NASA Technical Reports Server (NTRS)

Linden, Kurt J.; Mcdonnell, Patrick N.

1994-01-01

The development and commercial application of high power diode laser arrays for use as solid-state laser pumps is described. Such solid-state laser pumps are significantly more efficient and reliable than conventional flash-lamps. This paper describes the design and fabrication of diode lasers emitting in the 780 - 900 nm spectral region, and discusses their performance and reliability. Typical measured performance parameters include electrical-to-optical power conversion efficiencies of 50 percent, narrow-band spectral emission of 2 to 3 nm FWHM, pulsed output power levels of 50 watts/bar with reliability values of over 2 billion shots to date (tests to be terminated after 10 billion shots), and reliable operation to pulse lengths of 1 ms. Pulse lengths up to 5 ms have been demonstrated at derated power levels, and CW performance at various power levels has been evaluated in a 'bar-in-groove' laser package. These high-power 1-cm stacked-bar arrays are now being manufactured for OEM use. Individual diode laser bars, ready for package-mounting by OEM customers, are being sold as commodity items. Commercial and medical applications of these laser arrays include solid-state laser pumping for metal-working, cutting, industrial measurement and control, ranging, wind-shear/atmospheric turbulence detection, X-ray generation, materials surface cleaning, microsurgery, ophthalmology, dermatology, and dental procedures.

Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging

PubMed Central

Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A. Douglas; Choma, Michael A.; Cao, Hui

2015-01-01

The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications. PMID:25605946

Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging.

PubMed

Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A Douglas; Choma, Michael A; Cao, Hui

2015-02-03

The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications.

The optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

PubMed

Qiu, Zong-Bo; Zhu, Xin-Jun; Li, Fang-Min; Liu, Xiao; Yue, Ming

2007-07-01

Lasers have been widely used in the field of biology along with the development of laser technology, but the mechanism of the bio-effect of lasers is not explicit. The objective of this paper was to test the optical effect of a laser on protecting wheat from UV-B damage. A patent instrument was employed to emit semiconductor laser (wavelength 650 nm) and incoherent red light, which was transformed from the semiconductor laser. The wavelength, power and lightfleck diameter of the incoherent red light are the same as those of the semiconductor laser. The semiconductor laser (wavelength 650 nm, power density 3.97 mW mm(-2)) and incoherent red light (wavelength 650 nm, power density 3.97 mW mm(-2)) directly irradiated the embryo of wheat seeds for 3 min respectively, and when the seedlings were 12-day-old they were irradiated by UV-B radiation (10.08 kJ m(-2)) for 12 h in the dark. Changes in the concentration of malondialdehyde (MDA), hydrogen peroxide (H(2)O(2)), glutathione (GSH), ascorbate (AsA), carotenoids (CAR), the production rate of superoxide radical (O(2)(-)), the activities of peroxidase (POD), catalase (CAT), superoxide dismutase (SOD) and the growth parameters of seedlings (plant height, leaf area and fresh weight) were measured to test the optical effect of the laser. The results showed that the incoherent red light treatment could not enhance the activities of SOD, POD and CAT and the concentration of AsA and CAR. When the plant cells were irradiated by UV-B, the incoherent red light treatment could not eliminate active oxygen and prevent lipid peroxidation in wheat. The results also clearly demonstrate that the plant DNA was damaged by UV-B radiation and semiconductor laser irradiance had the capability to protect plants from UV-B-induced DNA damage, while the incoherent red light could not. This is the first investigation reporting the optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

Tunable semiconductor lasers

NASA Technical Reports Server (NTRS)

Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

2006-01-01

Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

Semiconductor laser-based optoelectronics oscillators

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, Lute; Wu, Chi; Davis, Lawrence J.; Forouhar, Siamak

1998-08-01

We demonstrate the realization of coupled opto-electronic oscillators (COEO) with different semiconductor lasers, including a ring laser, a Fabry-Perot laser, and a colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

High Power Laser Processing Of Materials

NASA Astrophysics Data System (ADS)

Martyr, D. R.; Holt, T.

1987-09-01

The first practical demonstration of a laser device was in 1960 and in the following years, the high power carbon dioxide laser has matured as an industrial machine tool. Modern carbon dioxide gas lasers can be used for cutting, welding, heat treatment, drilling, scribing and marking. Since their invention over 25 years ago they are now becoming recognised as highly reliable devices capable of achieving huge savings in production costs in many situations. This paper introduces the basic laser processing techniques of cutting, welding and heat treatment as they apply to the most common engineering materials. Typical processing speeds achieved with a wide range of laser powers are reported. Accuracies achievable and fit-up tolerances required are presented. Methods of integrating lasers with machine tools are described and their suitability in a wide range of manufacturing industries is described by reference to recent installations. Examples from small batch manufacturing, high volume production using dedicated laser welding equipment, and high volume manufacturing using 'flexible' automated laser welding equipment are described Future applications of laser processing are suggested by reference to current process developments.

High-power disk lasers: advances and applications

NASA Astrophysics Data System (ADS)

Havrilla, David; Ryba, Tracey; Holzer, Marco

2012-03-01

Though the genesis of the disk laser concept dates to the early 90's, the disk laser continues to demonstrate the flexibility and the certain future of a breakthrough technology. On-going increases in power per disk, and improvements in beam quality and efficiency continue to validate the genius of the disk laser concept. As of today, the disk principle has not reached any fundamental limits regarding output power per disk or beam quality, and offers numerous advantages over other high power resonator concepts, especially over monolithic architectures. With about 2,000 high power disk lasers installations, and a demand upwards of 1,000 lasers per year, the disk laser has proven to be a robust and reliable industrial tool. With advancements in running cost, investment cost and footprint, manufacturers continue to implement disk laser technology with more vigor than ever. This paper will explain recent advances in disk laser technology and process relevant features of the laser, like pump diode arrangement, resonator design and integrated beam guidance. In addition, advances in applications in the thick sheet area and very cost efficient high productivity applications like remote welding, remote cutting and cutting of thin sheets will be discussed.

Laser-driven plasma photonic crystals for high-power lasers

NASA Astrophysics Data System (ADS)

Lehmann, G.; Spatschek, K. H.

2017-05-01

Laser-driven plasma density gratings in underdense plasma are shown to act as photonic crystals for high power lasers. The gratings are created by counterpropagating laser beams that trap electrons, followed by ballistic ion motion. This leads to strong periodic plasma density modulations with a lifetime on the order of picoseconds. The grating structure is interpreted as a plasma photonic crystal time-dependent property, e.g., the photonic band gap width. In Maxwell-Vlasov and particle-in-cell simulations it is demonstrated that the photonic crystals may act as a frequency filter and mirror for ultra-short high-power laser pulses.

Atmospheric Propagation and Combining of High-Power Lasers

DTIC Science & Technology

2015-09-08

Brightness-scaling potential of actively phase- locked solid state laser arrays,” IEEE J. Sel. Topics Quantum Electron., vol. 13, no. 3, pp. 460–472, May...attempting to phase- lock high-power lasers, which is not encountered when phase- locking low-power lasers, for example mW power levels. Regardless, we...technology does not currently exist. This presents a challenging problem when attempting to phase- lock high-power lasers, which is not encountered when

Stimulated Brillouin scattering of laser radiation in a compensated magnetoactive semiconductor

NASA Astrophysics Data System (ADS)

Ferdous, T.; Salahuddin, M.; Amin, M. R.; Salimullah, M.

1995-09-01

In the present paper we have studied the stimulated Brillouin scattering of laser radiation in a compensated magnetoactive semiconductor. The nonlinearity in the low-frequency ion-acoustic wave arises through the ponderomotive force on both electrons and holes. The high-frequency nonlinearity arises through the nonlinear current density. For typical plasma parameters in compensated Ge, ɛL=16, T0=77 K, n00=1017 cm-3, Bs=60 kG, θ=30°, laser power density corresponding to a CO2 laser ~=0.1 MW cm-2, the growth rate of the low-frequency ion-acoustic wave turns out to be ~=107 rad sec-1.

Electron beam pumped semiconductor laser

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

High average power scaleable thin-disk laser

DOEpatents

Beach, Raymond J.; Honea, Eric C.; Bibeau, Camille; Payne, Stephen A.; Powell, Howard; Krupke, William F.; Sutton, Steven B.

2002-01-01

Using a thin disk laser gain element with an undoped cap layer enables the scaling of lasers to extremely high average output power values. Ordinarily, the power scaling of such thin disk lasers is limited by the deleterious effects of amplified spontaneous emission. By using an undoped cap layer diffusion bonded to the thin disk, the onset of amplified spontaneous emission does not occur as readily as if no cap layer is used, and much larger transverse thin disks can be effectively used as laser gain elements. This invention can be used as a high average power laser for material processing applications as well as for weapon and air defense applications.

Comparison of Square and Radial Geometries for High Intensity Laser Power Beaming Receivers

NASA Technical Reports Server (NTRS)

Raible, Daniel E.; Fast, Brian R.; Dinca, Dragos; Nayfeh, Taysir H.; Jalics, Andrew K.

2012-01-01

In an effort to further advance a realizable form of wireless power transmission (WPT), high intensity laser power beaming (HILPB) has been developed for both space and terrestrial applications. Unique optical-to-electrical receivers are employed with near infrared (IR-A) continuous-wave (CW) semiconductor lasers to experimentally investigate the HILPB system. In this paper, parasitic feedback, uneven illumination and the implications of receiver array geometries are considered and experimental hardware results for HILPB are presented. The TEM00 Gaussian energy profile of the laser beam presents a challenge to the effectiveness of the receiver to perform efficient photoelectric conversion, due to the resulting non-uniform illumination of the photovoltaic cell arrays. In this investigation, the geometry of the receiver is considered as a technique to tailor the receiver design to accommodate the Gaussian beam profile, and in doing so it is demonstrated that such a methodology is successful in generating bulk receiver output power levels reaching 25 W from 7.2 sq cm of photovoltaic cells. These results are scalable, and may be realized by implementing receiver arraying and utilizing higher power source lasers to achieve a 1.0 sq m receiver capable of generating over 30 kW of electrical power. This type of system would enable long range optical "refueling" of electric platforms, such as MUAV s, airships, robotic exploration missions and provide power to spacecraft platforms which may utilize it to drive electric means of propulsion. In addition, a smaller HILPB receiver aperture size could be utilized to establish a robust optical communications link within environments containing high levels of background radiance, to achieve high signal to noise ratios.

Overview on the high power excimer laser technology

NASA Astrophysics Data System (ADS)

Liu, Jingru

2013-05-01

High power excimer laser has essential applications in the fields of high energy density physics, inertial fusion energy and industry owing to its advantages such as short wavelength, high gain, wide bandwidth, energy scalable and repetition operating ability. This overview is aimed at an introduction and evaluation of enormous endeavor of the international high power excimer laser community in the last 30 years. The main technologies of high power excimer laser are reviewed, which include the pumping source technology, angular multiplexing and pulse compressing, beam-smoothing and homogenous irradiation, high efficiency and repetitive operation et al. A high power XeCl laser system developed in NINT of China is described in detail.

Material Processing with High Power CO2-Lasers

NASA Astrophysics Data System (ADS)

Bakowsky, Lothar

1986-10-01

After a period of research and development lasertechnique now is regarded as an important instrument for flexible, economic and fully automatic manufacturing. Especially cutting of flat metal sheets with high power C02-lasers and CNC controlled two or three axes handling systems is a wide spread. application. Three dimensional laser cutting, laser-welding and -heat treatment are just at the be ginning of industrial use in production lines. The main. advantages of laser technology. are - high. accuracy - high, processing velocity - law thermal distortion. - no tool abrasion. The market for laser material processing systems had 1985 a volume of 300 Mio S with growth rates between, 20 % and 30 %. The topic of this lecture are hiTrh. power CO2-lasers. Besides this systems two others are used as machining tools, Nd-YAG- and Eximer lasers. All applications of high. power CO2-lasers to industrial material processing show that high processing velocity and quality are only guaranteed in case of a stable intensity. profile on the workpiece. This is only achieved by laser systems without any power and mode fluctuations and by handling systems of high accuracy. Two applications in the automotive industry are described, below as examples for laser cutting and laser welding of special cylindrical motor parts.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

DOEpatents

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

High power laser perforating tools and systems

DOEpatents

Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O; Koblick, Yeshaya; Moxley, Joel F

2014-04-22

ystems devices and methods for the transmission of 1 kW or more of laser energy deep into the earth and for the suppression of associated nonlinear phenomena. Systems, devices and methods for the laser perforation of a borehole in the earth. These systems can deliver high power laser energy down a deep borehole, while maintaining the high power to perforate such boreholes.

Innovative ceramic slab lasers for high power laser applications

NASA Astrophysics Data System (ADS)

Lapucci, Antonio; Ciofini, Marco

2005-09-01

Diode Pumped Solid State Lasers (DPSSL) are gaining increasing interest for high power industrial application, given the continuous improvement in high power diode laser technology reliability and affordability. These sources open new windows in the parameter space for traditional applications such as cutting , welding, marking and engraving for high reflectance metallic materials. Other interesting applications for this kind of sources include high speed thermal printing, precision drilling, selective soldering and thin film etching. In this paper we examine the most important DPSS laser source types for industrial applications and we describe in details the performances of some slab laser configurations investigated at our facilities. The different architectures' advantages and draw-backs are briefly compared in terms of performances, system complexity and ease of scalability to the multi-kW level.

Semiconductor laser technology for remote sensing experiments

NASA Technical Reports Server (NTRS)

Katz, Joseph

1988-01-01

Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

Mode Hopping in Semiconductor Lasers

NASA Astrophysics Data System (ADS)

Heumier, Timothy Alan

Semiconductor lasers have found widespread use in fiberoptic communications, merchandising (bar-code scanners), entertainment (videodisc and compact disc players), and in scientific inquiry (spectroscopy, laser cooling). Some uses require a minimum degree of stability of wavelength which is not met by these lasers: Under some conditions, semiconductor lasers can discontinuously switch wavelengths in a back-and-forth manner. This is called mode hopping. We show that mode hopping is directly correlated to noise in the total intensity, and that this noise is easily detected by a photodiode. We also show that there are combinations of laser case temperature and injection current which lead to mode hopping. Conversely, there are other combinations for which the laser is stable. These results are shown to have implications for controlling mode hopping.

High power disk lasers: advances and applications

NASA Astrophysics Data System (ADS)

Havrilla, David; Holzer, Marco

2011-02-01

Though the genesis of the disk laser concept dates to the early 90's, the disk laser continues to demonstrate the flexibility and the certain future of a breakthrough technology. On-going increases in power per disk, and improvements in beam quality and efficiency continue to validate the genius of the disk laser concept. As of today, the disk principle has not reached any fundamental limits regarding output power per disk or beam quality, and offers numerous advantages over other high power resonator concepts, especially over monolithic architectures. With well over 1000 high power disk lasers installations, the disk laser has proven to be a robust and reliable industrial tool. With advancements in running cost, investment cost and footprint, manufacturers continue to implement disk laser technology with more vigor than ever. This paper will explain important details of the TruDisk laser series and process relevant features of the system, like pump diode arrangement, resonator design and integrated beam guidance. In addition, advances in applications in the thick sheet area and very cost efficient high productivity applications like remote welding, remote cutting and cutting of thin sheets will be discussed.

Fundamental Limit of 1/f Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

NASA Technical Reports Server (NTRS)

Numata, K.; Camp, J.

2011-01-01

So-called 1/f noise has power spectral density inversely proportional to frequency, and is observed in many physical processes. Single longitudinal-mode semiconductor lasers, used in variety of interferometric sensing applications, as well as coherent communications, exhibit 1/f frequency noise at low frequency (typically below 100kHz). Here we evaluate mechanical thermal noise due to mechanical dissipation in semiconductor laser components and give a plausible explanation for the widely-observed 1/f frequency noise, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Semiconductor-laser's short cavity, small beam radius, and lossy components are expected to emphasize thermal-noise-limited frequency noise. Our simple model largely explains the different 1/f noise levels observed in various semiconductor lasers, and provides a framework where the noise may be reduced with proper design.

Atmospheric propagation and combining of high-power lasers.

PubMed

Nelson, W; Sprangle, P; Davis, C C

2016-03-01

In this paper, we analyze beam combining and atmospheric propagation of high-power lasers for directed-energy (DE) applications. The large linewidths inherent in high-power fiber and slab lasers cause random phase and intensity fluctuations that occur on subnanosecond time scales. Coherently combining these high-power lasers would involve instruments capable of precise phase control and operation at rates greater than ∼10  GHz. To the best of our knowledge, this technology does not currently exist. This presents a challenging problem when attempting to phase lock high-power lasers that is not encountered when phase locking low-power lasers, for example, at milliwatt power levels. Regardless, we demonstrate that even if instruments are developed that can precisely control the phase of high-power lasers, coherent combining is problematic for DE applications. The dephasing effects of atmospheric turbulence typically encountered in DE applications will degrade the coherent properties of the beam before it reaches the target. Through simulations, we find that coherent beam combining in moderate turbulence and over multikilometer propagation distances has little advantage over incoherent combining. Additionally, in cases of strong turbulence and multikilometer propagation ranges, we find nearly indistinguishable intensity profiles and virtually no difference in the energy on the target between coherently and incoherently combined laser beams. Consequently, we find that coherent beam combining at the transmitter plane is ineffective under typical atmospheric conditions.

External control of semiconductor nanostructure lasers

NASA Astrophysics Data System (ADS)

Naderi, Nader A.

2011-12-01

Novel semiconductor nanostructure laser diodes such as quantum-dot and quantum-dash are key optoelectronic candidates for many applications such as data transmitters in ultra fast optical communications. This is mainly due to their unique carrier dynamics compared to conventional quantum-well lasers that enables their potential for high differential gain and modified linewidth enhancement factor. However, there are known intrinsic limitations associated with semiconductor laser dynamics that can hinder the performance including the mode stability, spectral linewidth, and direct modulation capabilities. One possible method to overcome these limitations is through the use of external control techniques. The electrical and/or optical external perturbations can be implemented to improve the parameters associated with the intrinsic laser's dynamics, such as threshold gain, damping rate, spectral linewidth, and mode selectivity. In this dissertation, studies on the impact of external control techniques through optical injection-locking, optical feedback and asymmetric current bias control on the overall performance of the nanostructure lasers were conducted in order to understand the associated intrinsic device limitations and to develop strategies for controlling the underlying dynamics to improve laser performance. In turn, the findings of this work can act as a guideline for making high performance nanostructure lasers for future ultra fast data transmitters in long-haul optical communication systems, and some can provide an insight into making a compact and low-cost terahertz optical source for future implementation in monolithic millimeter-wave integrated circuits.

High-power free-electron lasers-technology and future applications

NASA Astrophysics Data System (ADS)

Socol, Yehoshua

2013-03-01

Free-electron laser (FEL) is an all-electric, high-power, high beam-quality source of coherent radiation, tunable - unlike other laser sources - at any wavelength within wide spectral region from hard X-rays to far-IR and beyond. After the initial push in the framework of the “Star Wars” program, the FEL technology benefited from decades of R&D and scientific applications. Currently, there are clear signs that the FEL technology reached maturity, enabling real-world applications. E.g., successful and unexpectedly smooth commissioning of the world-first X-ray FEL in 2010 increased in one blow by more than an order of magnitude (40×) wavelength region available by FEL technology and thus demonstrated that the theoretical predictions just keep true in real machines. Experience of ordering turn-key electron beamlines from commercial companies is a further demonstration of the FEL technology maturity. Moreover, successful commissioning of the world-first multi-turn energy-recovery linac demonstrated feasibility of reducing FEL size, cost and power consumption by probably an order of magnitude in respect to previous configurations, opening way to applications, previously considered as non-feasible. This review takes engineer-oriented approach to discuss the FEL technology issues, keeping in mind applications in the fields of military and aerospace, next generation semiconductor lithography, photo-chemistry and isotope separation.

1047 nm laser diode master oscillator Nd:YLF power amplifier laser system

NASA Technical Reports Server (NTRS)

Yu, A. W.; Krainak, M. A.; Unger, G. L.

1993-01-01

A master oscillator power amplifier (MOPA) laser transmitter system at 1047 nm wavelength using a semiconductor laser diode and a diode pumped solid state (Nd:YLF) laser (DPSSL) amplifier is described. A small signal gain of 23 dB, a near diffraction limited beam, 1 Gbit/s modulation rates and greater than 0.6 W average power are achieved. This MOPA laser has the advantage of amplifying the modulation signal from the laser diode master oscillator (MO) with no signal degradation.

High Current, Multi-Filament Photoconductive Semiconductor Switching

DTIC Science & Technology

2011-06-01

linear PCSS triggered with a 100 fs laser pulse . Figure 1. A generic photoconductive semiconductor switch rapidly discharges a charged capacitor...switching is the most critical challenge remaining for photoconductive semiconductor switch (PCSS) applications in Pulsed Power. Many authors have...isolation and control, pulsed or DC charging, and long device lifetime, provided the current per filament is limited to 20-30A for short pulse (10

Lifetime laser damage performance of β -Ga2O3 for high power applications

NASA Astrophysics Data System (ADS)

Yoo, Jae-Hyuck; Rafique, Subrina; Lange, Andrew; Zhao, Hongping; Elhadj, Selim

2018-03-01

Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2). This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.

Micro-scanning mirrors for high-power laser applications in laser surgery

NASA Astrophysics Data System (ADS)

Sandner, Thilo; Kimme, Simon; Grasshoff, Thomas; Todt, Ulrich; Graf, Alexander; Tulea, Cristian; Lenenbach, Achim; Schenk, Harald

2014-03-01

We present two novel micro scanning mirrors with large aperture and HR dielectric coatings suitable for high power laser applications in a miniaturized laser-surgical instrument for neurosurgery to cut skull tissue. An electrostatic driven 2D-raster scanning mirror with 5x7.1mm aperture is used for dynamic steering of a ps-laser beam of the laser cutting process. A second magnetic 2D-beam steering mirror enables a static beam correction of a hand guided laser instrument. Optimizations of a magnetic gimbal micro mirror with 6 mm x 8 mm mirror plate are presented; here static deflections of 3° were reached. Both MEMS devices were successfully tested with a high power ps-laser at 532nm up to 20W average laser power.

Monolithic fiber laser oscillator with record high power

NASA Astrophysics Data System (ADS)

Yang, Baolai; Shi, Chen; Zhang, Hanwei; Ye, Qing; Pi, Haoyang; Tao, Rumao; Wang, Xiaolin; Ma, Pengfei; Leng, Jinyong; Chen, Zilun; Zhou, Pu; Xu, Xiaojun; Chen, Jinbao; Liu, Zejin

2018-07-01

With an increasing output power, the power scaling of monolithic fiber laser oscillators faces the severe limitations of stimulated Raman scattering (SRS) and the transverse mode instability (TMI) effect. In this work, we report a high power monolithic fiber laser oscillator with a maximum output power of 5.2 kW, which is realized with a trade-off design between the SRS and TMI. The monolithic fiber laser oscillator is constructed with ytterbium-doped fiber with a core/inner cladding diameter of 25/400 µm and corresponding home-made FBG. High-power 915 nm laser diodes are employed as a pump source and are distributed in a bidirectional-pump configuration. By optimizing the bidirectional pump proportion, the monolithic fiber laser oscillator is scaled up to 5.2 kW with a slope efficiency of ~63%. Operating at 5.2 kW, the intensity of the Raman stokes light is ~22 dB below the signal laser and the beam quality (M2-factor) is ~2.2. To the best of our knowledge, this is a record high power for monolithic fiber laser oscillators.

New generation of compact high power disk lasers

NASA Astrophysics Data System (ADS)

Feuchtenbeiner, Stefanie; Zaske, Sebastian; Schad, Sven-Silvius; Gottwald, Tina; Kuhn, Vincent; Kumkar, Sören; Metzger, Bernd; Killi, Alexander; Haug, Patrick; Speker, Nicolai

2018-02-01

New technological developments in high power disk lasers emitting at 1030 nm are presented. These include the latest generation of TRUMPF's TruDisk product line offering high power disk lasers with up to 6 kW output power and beam qualities of up to 4 mm*mrad. With these compact devices a footprint reduction of 50% compared to the previous model could be achieved while at the same time improving robustness and increasing system efficiency. In the context of Industry 4.0, the new generation of TruDisk lasers features a synchronized data recording of all sensors, offering high-quality data for virtual analyses. The lasers therefore provide optimal hardware requirements for services like Condition Monitoring and Predictive Maintenance. We will also discuss its innovative and space-saving cooling architecture. It allows operation of the laser under very critical ambient conditions. Furthermore, an outlook on extending the new disk laser platform to higher power levels will be given. We will present a disk laser with 8 kW laser power out of a single disk with a beam quality of 5 mm*mrad using a 125 μm fiber, which makes it ideally suited for cutting and welding applications. The flexibility of the disk laser platform also enables the realization of a wide variety of beam guiding setups. As an example a new scheme called BrightLine Weld will be discussed. This technology allows for an almost spatter free laser welding process, even at high feed rates.

High-powered CO2 -lasers and noise control

NASA Astrophysics Data System (ADS)

Honkasalo, Antero; Kuronen, Juhani

High-power CO2 -lasers are being more and more widely used for welding, drilling and cutting in machine shops. In the near future, different kinds of surface treatments will also become routine practice with laser units. The industries benefitting most from high power lasers will be: the automotive industry, shipbuilding, the offshore industry, the aerospace industry, the nuclear and the chemical processing industries. Metal processing lasers are interesting from the point of view of noise control because the working tool is a laser beam. It is reasonable to suppose that the use of such laser beams will lead to lower noise levels than those connected with traditional metal processing methods and equipment. In the following presentation, the noise levels and possible noise-control problems attached to the use of high-powered CO2 -lasers are studied.

Semiconductor cylinder fiber laser

NASA Astrophysics Data System (ADS)

Sandupatla, Abhinay; Flattery, James; Kornreich, Philipp

2015-12-01

We fabricated a fiber laser that uses a thin semiconductor layer surrounding the glass core as the gain medium. This is a completely new type of laser. The In2Te3 semiconductor layer is about 15-nm thick. The fiber laser has a core diameter of 14.2 μm, an outside diameter of 126 μm, and it is 25-mm long. The laser mirrors consist of a thick vacuum-deposited aluminum layer at one end and a thin semitransparent aluminum layer deposited at the other end of the fiber. The laser is pumped from the side with either light from a halogen tungsten incandescent lamp or a blue light emitting diode flash light. Both the In2Te3 gain medium and the aluminum mirrors have a wide bandwidth. Therefore, the output spectrum consists of a pedestal from a wavelength of about 454 to 623 nm with several peaks. There is a main peak at 545 nm. The main peak has an amplitude of 16.5 dB above the noise level of -73 dB.

Development of high-power CO2 lasers and laser material processing

NASA Astrophysics Data System (ADS)

Nath, Ashish K.; Choudhary, Praveen; Kumar, Manoj; Kaul, R.

2000-02-01

Scaling laws to determine the physical dimensions of the active medium and optical resonator parameters for designing convective cooled CO2 lasers have been established. High power CW CO2 lasers upto 5 kW output power and a high repetition rate TEA CO2 laser of 500 Hz and 500 W average power incorporated with a novel scheme for uniform UV pre- ionization have been developed for material processing applications. Technical viability of laser processing of several engineering components, for example laser surface hardening of fine teeth of files, laser welding of martensitic steel shroud and titanium alloy under-strap of turbine, laser cladding of Ni super-alloy with stellite for refurbishing turbine blades were established using these lasers. Laser alloying of pre-placed SiC coating on different types of aluminum alloy, commercially pure titanium and Ti-6Al-4V alloy, and laser curing of thermosetting powder coating have been also studied. Development of these lasers and results of some of the processing studies are briefly presented here.

The NASA high power carbon dioxide laser: A versatile tool for laser applications

NASA Technical Reports Server (NTRS)

Lancashire, R. B.; Alger, D. L.; Manista, E. J.; Slaby, J. G.; Dunning, J. W.; Stubbs, R. M.

1976-01-01

A closed-cycle, continuous wave, carbon dioxide high power laser has been designed and fabricated to support research for the identification and evaluation of possible high power laser applications. The device is designed to generate up to 70 kW of laser power in annular shape beams from 1 to 9 cm in diameter. Electric discharge, either self sustained or electron beam sustained, is used for excitation. This laser facility provides a versatile tool on which research can be performed to advance the state-of-the-art technology of high power CO2 lasers in such areas as electric excitation, laser chemistry, and quality of output beams. The facility provides a well defined, continuous wave beam for various application experiments, such as propulsion, power conversion, and materials processing.

Design of bent waveguide semiconductor lasers using nonlinear equivalent chirp

NASA Astrophysics Data System (ADS)

Li, Lianyan; Shi, Yuechun; Zhang, Yunshan; Chen, Xiangfei

2018-01-01

Reconstruction equivalent chirp (REC) technique is widely used in the design and fabrication of semiconductor laser arrays and tunable lasers with low cost and high wavelength accuracy. Bent waveguide is a promising method to suppress the zeroth order resonance, which is an intrinsic problem in REC technique. However, it may introduce basic grating chirp and deteriorate the single longitudinal mode (SLM) property of the laser. A nonlinear equivalent chirp pattern is proposed in this paper to compensate the grating chirp and improve the SLM property. It will benefit the realization of low-cost Distributed feedback (DFB) semiconductor laser arrays with accurate lasing wavelength.

Recent development on high-power tandem-pumped fiber laser

NASA Astrophysics Data System (ADS)

Zhou, Pu; Xiao, Hu; Leng, Jinyong; Zhang, Hanwei; Xu, Jiangmin; Wu, Jian

2016-11-01

High power fiber laser is attracting more and more attention due to its advantage in excellent beam quality, high electricto- optical conversion efficiency and compact system configuration. Power scaling of fiber laser is challenged by the brightness of pump source, nonlinear effect, modal instability and so on. Pumping active fiber by using high-brightness fiber laser instead of common laser diode may be the solution for the brightness limitation. In this paper, we will present the recent development of various kinds of high power fiber laser based on tandem pumping scheme. According to the absorption property of Ytterbium-doped fiber, Thulium-doped fiber and Holmium-doped fiber, we have theoretically studied the fiber lasers that operate at 1018 nm, 1178 nm and 1150 nm, respectively in detail. Consequently, according to the numerical results we have optimized the fiber laser system design, and we have achieved (1) 500 watt level 1018nm Ytterbium-doped fiber laser (2) 100 watt level 1150 nm fiber laser and 100 watt level random fiber laser (3) 30 watt 1178 nm Ytterbium-doped fiber laser, 200 watt-level random fiber laser. All of the above-mentioned are the record power for the corresponded type of fiber laser to the best of our knowledge. By using the high-brightness fiber laser operate at 1018 nm, 1178 nm and 1150 nm that we have developed, we have achieved the following high power fiber laser (1) 3.5 kW 1090 nm Ytterbium-doped fiber amplifier (2) 100 watt level Thulium-doped fiber laser and (3) 50 watt level Holmium -doped fiber laser.

Modulation characteristics of a high-power semiconductor Master Oscillator Power Amplifier (MOPA)

NASA Technical Reports Server (NTRS)

Cornwell, Donald Mitchell, Jr.

1992-01-01

A semiconductor master oscillator-power amplifier was demonstrated using an anti-reflection (AR) coated broad area laser as the amplifier. Under CW operation, diffraction-limited single-longitudinal-mode powers up to 340 mW were demonstrated. The characteristics of the far-field pattern were measured and compared to a two-dimensional reflective Fabry-Perot amplifier model of the device. The MOPA configuration was modulated by the master oscillator. Prior to injection into the amplifier, the amplitude and frequency modulation properties of the master oscillator were characterized. The frequency response of the MOPA configuration was characterized for an AM/FM modulated injection beam, and was found to be a function of the frequency detuning between the master oscillator and the resonant amplifier. A shift in the phase was also observed as a function of frequency detuning; this phase shift is attributed to the optical phase shift imparted to a wave reflected from a Fabry-Perot cavity. Square-wave optical pulses were generated at 10 MHz and 250 MHz with diffraction-limited peak powers of 200 mW and 250 mW. The peak power for a given modulation frequency is found to be limited by the injected power and the FM modulation at that frequency. The modulation results make the MOPA attractive for use as a transmitter source in applications such as free-space communications and ranging/altimetry.

High-Temperature, Wirebondless, Ultracompact Wide Bandgap Power Semiconductor Modules

NASA Technical Reports Server (NTRS)

Elmes, John

2015-01-01

Silicon carbide (SiC) and other wide bandgap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultrahigh power density for both space and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliable high-temperature device packaging technology. This Phase II project developed an ultracompact hybrid power module packaging technology based on the use of double lead frames and direct lead frame-to-chip transient liquid phase (TLP) bonding that allows device operation up to 450 degC. The new power module will have a very small form factor with 3-5X reduction in size and weight from the prior art, and it will be capable of operating from 450 degC to -125 degC. This technology will have a profound impact on power electronics and energy conversion technologies and help to conserve energy and the environment as well as reduce the nation's dependence on fossil fuels.

Passive and active mid-infrared semiconductor nanostructures: Three-dimensional metamaterials and high wall plug efficiency quantum cascade lasers

NASA Astrophysics Data System (ADS)

Hoffman, Anthony J.

Every instant, light and matter are interacting in ways that shape the world around us. This dissertation examines the interaction of mid-infrared light with stacks of thin semiconductor layers. The work is divided into two parts: mid-infrared metamaterials and high wall plug efficiency (WPE) Quantum Cascade (QC) lasers. The mid-infrared metamaterials represent an entirely new class of material and have great potential for enabling highly-desired applications such as sub-diffraction imaging, confinement, and waveguiding. High WPE QC lasers greatly enhance the commercial feasibility of sensing, infrared countermeasures and free-space infrared communications. The first part of this dissertation describes the first three-dimensional, optical metamaterial. The all-semiconductor metamaterial is based on a strongly anisotropic dielectric function and exhibits negative refraction for a large bandwidth in the mid-infrared. The underlying theory of strongly anisotropic metamaterials is discussed, detailed characterization of several metamaterials is presented, and a macroscopic beam experiment is employed to demonstrate negative refraction. A detailed study of waveguides with strongly anisotropic cores is also presented and the low-order mode cutoff for such left-handed waveguides is observed. The second part of this dissertation discusses improvements in QC laser WPE through improved processing, packaging, and design. Devices using conventional QC design strategies processed as buried heterostructures operate with 5% WPE at room temperature in continuous wave mode, a significant improvement over previous generation devices. To further improve WPE, QC lasers based on ultra-strong coupling between the injector and upper-laser levels are designed and characterized. These devices operate with nearly 50% pulsed WPE---a true milestone for QC technology. A new type of QC laser design incorporating heterogeneous injector regions to reduce the voltage defect and thus improve WPE is

Light sources based on semiconductor current filaments

DOEpatents

Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

2003-01-01

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

Experimental investigation of high power pulsed 2.8 μm Er3+-doped ZBLAN fiber lasers

NASA Astrophysics Data System (ADS)

Shen, Yanlong; Wang, Yishan; Huang, Ke; Luan, Kunpeng; Chen, Hongwei; Tao, Mengmeng; Yu, Li; Yi, Aiping; Si, Jinhai

2017-05-01

We report on the recent progress on high power pulsed 2.8 μm Er3+-doped ZBLAN fiber laser through techniques of passively and actively Q-switching in our research group. In passively Q-switched operation, a diode-cladding-pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) was demonstrated. Stable pulse train was produced at a slope efficient of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ. The maximum peak power was calculated to be 21.9 W. In actively Q-switched operation, a diode-pumped actively Q-switched Er3+-doped ZBLAN fiber laser at 2.8 μm with an optical chopper was reported. The maximum laser pulse energy of up to 130 μJ and a pulse width of 127.3 ns at a repetition rate of 10 kHz with an operating wavelength of 2.78 μm was obtained, yielding the maximum peak power of exceeding 1.1 kW.

All-semiconductor high-speed akinetic swept-source for OCT

NASA Astrophysics Data System (ADS)

Minneman, Michael P.; Ensher, Jason; Crawford, Michael; Derickson, Dennis

2011-12-01

A novel swept-wavelength laser for optical coherence tomography (OCT) using a monolithic semiconductor device with no moving parts is presented. The laser is a Vernier-Tuned Distributed Bragg Reflector (VT-DBR) structure exhibiting a single longitudinal mode. All-electronic wavelength tuning is achieved at a 200 kHz sweep repetition rate, 20 mW output power, over 100 nm sweep width and coherence length longer than 40 mm. OCT point-spread functions with 45- 55 dB dynamic range are demonstrated; lasers at 1550 nm, and now 1310 nm, have been developed. Because the laser's long-term tuning stability allows for electronic sample trigger generation at equal k-space intervals (electronic k-clock), the laser does not need an external optical k-clock for measurement interferometer sampling. The non-resonant, allelectronic tuning allows for continuously adjustable sweep repetition rates from mHz to 100s of kHz. Repetition rate duty cycles are continuously adjustable from single-trigger sweeps to over 99% duty cycle. The source includes a monolithically integrated power leveling feature allowing flat or Gaussian power vs. wavelength profiles. Laser fabrication is based on reliable semiconductor wafer-scale processes, leading to low and rapidly decreasing cost of manufacture.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Influence of spontaneous fluctuations on the emission spectrum of an injection semiconductor laser

NASA Astrophysics Data System (ADS)

Gulyaev, Yurii V.; Suris, Robert A.; Tager, A. A.; Élenkrig, B. B.

1988-11-01

A theoretical investigation is made of fluctuation-induced excitation of side longitudinal modes in the emission spectra of semiconductor lasers, including those with an external mirror. It is shown that nonlinear refraction of light in the active region of a semiconductor laser may result in a noise redistribution of the radiation between longitudinal resonator modes and can be responsible for the multimode nature of the average emission spectrum. An analysis is made of the influence of selectivity of an external mirror on the stability of cw operation, minimum line width, and mode composition of the emission spectra of semiconductor lasers. The conditions for maximum narrowing of the emission spectrum of a semiconductor laser with an external selective mirror are identified.

High-Power Lasers for Science and Society

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siders, C. W.; Haefner, C.

Since the first demonstration of the laser in 1960 by Theodore Maiman at Hughes Research Laboratories, the principal defining characteristic of lasers has been their ability to focus unprecedented powers of light in space, time, and frequency. High-power lasers have, over the ensuing five and a half decades, illuminated entirely new fields of scientific endeavor as well as made a profound impact on society. While the United States pioneered lasers and their early applications, we have been eclipsed in the past decade by highly effective national and international networks in both Europe and Asia, which have effectively focused their energies,more » efforts, and resources to achieve greater scientific and societal impact. This white paper calls for strategic investment which, by striking an appropriate balance between distributing our precious national funds and establishing centers of excellence, will ensure a broad pipeline of people and transformative ideas connecting our world-leading universities, defining flagship facilities stewarded by our national laboratories, and driving innovation across industry, to fully exploit the potential of high-power lasers.« less

Two semiconductor ring lasers coupled by a single-waveguide for optical memory operation

NASA Astrophysics Data System (ADS)

Van der Sande, Guy; Coomans, Werner; Gelens, Lendert

2014-05-01

Semiconductor ring lasers are semiconductor lasers where the laser cavity consists of a ring-shaped waveguide. SRLs are highly integrable and scalable, making them ideal candidates for key components in photonic integrated circuits. SRLs can generate light in two counterpropagating directions between which bistability has been demonstrated. Hence, information can be coded into the emission direction. This bistable operation allows SRLs to be used in systems for all-optical switching and as all-optical memories. For the demonstration of fast optical flip-flop operation, Hill et al. [Nature 432, 206 (2004)] fabricated two SRLs coupled by a single waveguide, rather than a solitary SRL. Nevertheless, the literature shows that a single SRL can also function perfectly as an all-optical memory. In our recent paper [W. Coomans et al., Phys. Rev. A 88, 033813, (2013)], we have raised the question whether coupling two SRLs to realize a single optical memory has any advantage over using a solitary SRL, taking into account the obvious disadvantage of a doubled footprint and power consumption. To provide the answer, we have presented in that paper a numerical study of the dynamical behavior of semiconductor ring lasers coupled by a single bus waveguide, both when weakly coupled and when strongly coupled. We have provided a detailed analysis of the multistable landscape in the coupled system, analyzed the stability of all solutions and related the internal dynamics in the individual lasers to the field effectively measured at the output of the waveguide. We have shown which coupling phases generally promote instabilities and therefore need to be avoided in the design. Regarding all-optical memory operation, we have demonstrated that there is no real advantage for bistable memory operation compared to using a solitary SRL. An increased power suppression ratio has been found to be mainly due to the destructive interference of the SRL fields at the low power port. Also

Design of a high-power, high-brightness Nd:YAG solar laser.

PubMed

Liang, Dawei; Almeida, Joana; Garcia, Dário

2014-03-20

A simple high-power, high-brightness Nd:YAG solar laser pumping approach is presented in this paper. The incoming solar radiation is both collected and concentrated by four Fresnel lenses and redirected toward a Nd:YAG laser head by four plane-folding mirrors. A fused-silica secondary concentrator is used to compress the highly concentrated solar radiation to a laser rod. Optimum pumping conditions and laser resonator parameters are found through ZEMAX and LASCAD numerical analysis. Solar laser power of 96 W is numerically calculated, corresponding to the collection efficiency of 24  W/m². A record-high solar laser beam brightness figure of merit of 9.6 W is numerically achieved.

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

NASA Astrophysics Data System (ADS)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

High-resolution wavefront control of high-power laser systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brase, J; Brown, C; Carrano, C

1999-07-08

Nearly every new large-scale laser system application at LLNL has requirements for beam control which exceed the current level of available technology. For applications such as inertial confinement fusion, laser isotope separation, laser machining, and laser the ability to transport significant power to a target while maintaining good beam quality is critical. There are many ways that laser wavefront quality can be degraded. Thermal effects due to the interaction of high-power laser or pump light with the internal optical components or with the ambient gas are common causes of wavefront degradation. For many years, adaptive optics based on thing deformablemore » glass mirrors with piezoelectric or electrostrictive actuators have be used to remove the low-order wavefront errors from high-power laser systems. These adaptive optics systems have successfully improved laser beam quality, but have also generally revealed additional high-spatial-frequency errors, both because the low-order errors have been reduced and because deformable mirrors have often introduced some high-spatial-frequency components due to manufacturing errors. Many current and emerging laser applications fall into the high-resolution category where there is an increased need for the correction of high spatial frequency aberrations which requires correctors with thousands of degrees of freedom. The largest Deformable Mirrors currently available have less than one thousand degrees of freedom at a cost of approximately $1M. A deformable mirror capable of meeting these high spatial resolution requirements would be cost prohibitive. Therefore a new approach using a different wavefront control technology is needed. One new wavefront control approach is the use of liquid-crystal (LC) spatial light modulator (SLM) technology for the controlling the phase of linearly polarized light. Current LC SLM technology provides high-spatial-resolution wavefront control, with hundreds of thousands of degrees of

Forward voltage short-pulse technique for measuring high power laser array junction temperature

NASA Technical Reports Server (NTRS)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Biological effects of a semiconductor diode laser on human periodontal ligament fibroblasts

PubMed Central

Choi, Eun-Jeong; Yim, Ju-Young; Koo, Ki-Tae; Seol, Yang-Jo; Lee, Yong-Moo; Ku, Young; Rhyu, In-Chul; Chung, Chong-Pyoung

2010-01-01

Purpose It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser therapy, there have been few reports on their effects on periodontal ligament fibroblasts (PDLFs). We performed this study to investigate the biological effects of semiconductor diode lasers on human PDLFs. Methods Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 J/cm2. A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P<0.05). Results At all energy fluencies of laser irradiation, PDLFs proliferation gradually increased for 72 hours without any significant differences compared with the control over the entire period taken together. However, an increment of cell proliferation significantly greater than in the control occurred between 24 and 48 hours at laser irradiation settings of 1.97 and 3.94 J/cm2 (P<0.05). The highest ALPase activity was found at 48 and 72 hours post-laser irradiation with 3.94 J/cm2 energy fluency (P<0.05). The phosphorylated ERK level was more prominent at 3.94 J/cm2 energy fluency than in the control. Conclusions The present study demonstrated that the GaAlAs semiconductor diode laser promoted proliferation and differentiation of human PDLFs. PMID:20607054

High-power all-fiber ultra-low noise laser

NASA Astrophysics Data System (ADS)

Zhao, Jian; Guiraud, Germain; Pierre, Christophe; Floissat, Florian; Casanova, Alexis; Hreibi, Ali; Chaibi, Walid; Traynor, Nicholas; Boullet, Johan; Santarelli, Giorgio

2018-06-01

High-power ultra-low noise single-mode single-frequency lasers are in great demand for interferometric metrology. Robust, compact all-fiber lasers represent one of the most promising technologies to replace the current laser sources in use based on injection-locked ring resonators or multi-stage solid-state amplifiers. Here, a linearly polarized high-power ultra-low noise all-fiber laser is demonstrated at a power level of 100 W. Special care has been taken in the study of relative intensity noise (RIN) and its reduction. Using an optimized servo actuator to directly control the driving current of the pump laser diode, we obtain a large feedback bandwidth of up to 1.3 MHz. The RIN reaches - 160 dBc/Hz between 3 and 20 kHz.

Intracavity dispersion effect on timing jitter of ultralow noise mode-locked semiconductor based external-cavity laser.

PubMed

Gee, S; Ozharar, S; Plant, J J; Juodawlkis, P W; Delfyett, P J

2009-02-01

We report the generation of optical pulse trains with 380 as of residual timing jitter (1 Hz-1 MHz) from a mode-locked external-cavity semiconductor laser, through a combination of optimizing the intracavity dispersion and utilizing a high-power, low-noise InGaAsP quantum-well slab-coupled optical waveguide amplifier gain medium. This is, to our knowledge, the lowest residual timing jitter reported to date from an actively mode-locked laser.

Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zolotarev, V V; Leshko, A Yu; Pikhtin, N A

2014-10-31

We have studied the spectral characteristics of multimode semiconductor lasers with high-order surface diffraction gratings based on asymmetric separate-confinement heterostructures grown by metalorganic vapour phase epitaxy (λ = 1070 nm). Experimental data demonstrate that, in the temperature range ±50 °C, the laser emission spectrum is ∼5 Å in width and contains a fine structure of longitudinal and transverse modes. A high-order (m = 15) surface diffraction grating is shown to ensure a temperature stability of the lasing spectrum dλ/dT = 0.9 Å K{sup -1} in this temperature range. From analysis of the fine structure of the lasing spectrum, we havemore » evaluated the mode spacing and, thus, experimentally determined the effective length of the Bragg diffraction grating, which was ∼400 μm in our samples. (lasers)« less

Advanced excimer laser technologies enable green semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

2014-03-01

"Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

High power laser downhole cutting tools and systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O

Downhole cutting systems, devices and methods for utilizing 10 kW or more laser energy transmitted deep into the earth with the suppression of associated nonlinear phenomena. Systems and devices for the laser cutting operations within a borehole in the earth. These systems and devices can deliver high power laser energy down a deep borehole, while maintaining the high power to perform cutting operations in such boreholes deep within the earth.

Efficient, high-power, and radially polarized fiber laser

PubMed Central

Lin, Di; Xia, Kegui; Li, Jianlang; Li, Ruxin; Ueda, Ken-ichi; Li, Guoqiang; Li, Xiaojun

2017-01-01

We demonstrate an ytterbium-doped fiber laser that emits high-power radially polarized light efficiently. In this study, a photonic crystal grating (PCG) was used as a polarization-selective output coupler, and the power of the radially polarized laser reached 2.42 W with a slope efficiency of 45.9% and a polarization purity of 96%. The results reveal that the inclusion of the PCG mirror into the fiber laser are particularly promising for generating high-power radially polarized light efficiently in view of its many important applications. PMID:20596223

Method and apparatus for tuning high power lasers

DOEpatents

Hutchinson, Donald P.; Vandersluis, Kenneth L.

1977-04-19

This invention relates to high power gas lasers that are adapted to be tuned to a desired lasing wavelength through the use of a gas cell to lower the gain at a natural lasing wavelength and "seeding" the laser with a beam from a low power laser which is lasing at the desired wavelength. This tuning is accomplished with no loss of power and produces a pulse with an altered pulse shape. It is potentially applicable to all gas lasers.

Department of Defense high power laser program guidance

NASA Astrophysics Data System (ADS)

Muller, Clifford H.

1994-06-01

The DoD investment of nominally $200 million per year is focused on four high power laser (HPL) concepts: Space-Based Laser (SBL), a Ballistic Missile Defense Organization effort that addresses boost-phase intercept for Theater Missile Defense and National Missile Defense; Airborne Laser (ABL), an Air Force effort that addresses boost-phase intercept for Theater Missile Defense; Ground-Based Laser (GBL), an Air Force effort addressing space control; and Anti-Ship Missile Defense (ASMD), a Navy effort addressing ship-based defense. Each organization is also supporting technology development with the goal of achieving less expensive, brighter, and lighter high power laser systems. These activities represent the building blocks of the DoD program to exploit the compelling characteristics of the high power laser. Even though DoD's HPL program are focused and moderately strong, additional emphasis in a few technical areas could help reduce risk in these programs. In addition, a number of options are available for continuing to use the High-Energy Laser System Test Facility (HELSTF) at White Sands Missile Range. This report provides a brief overview and guidance for the five efforts which comprise the DoD HPL program (SBL, ABL, GBL, ASMD, HELSTF).

High-power laser diodes at various wavelengths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emanuel, M.A.

High power laser diodes at various wavelengths are described. First, performance and reliability of an optimized large transverse mode diode structure at 808 and 941 nm are presented. Next, data are presented on a 9.5 kW peak power array at 900 nm having a narrow emission bandwidth suitable for pumping Yb:S-FAP laser materials. Finally, results on a fiber-coupled laser diode array at {approx}730 nm are presented.

Compact ultrafast semiconductor disk laser for nonlinear imaging in living organisms

NASA Astrophysics Data System (ADS)

Aviles-Espinosa, Rodrigo; Filippidis, G.; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Artigas, David; Loza-Alvarez, Pablo

2011-03-01

Ultrashort pulsed laser systems (such as Ti:sapphire) have been used in nonlinear microscopy during the last years. However, its implementation is not straight forward as they are maintenance-intensive, bulky and expensive. These limitations have prevented their wide-spread use for nonlinear imaging, especially in "real-life" biomedical applications. In this work we present the suitability of a compact ultrafast semiconductor disk laser source, with a footprint of 140x240x70 mm, to be used for nonlinear microscopy. The modelocking mechanism of the laser is based on a quantumdot semiconductor saturable absorber mirror (SESAM). The laser delivers an average output power of 287 mW with 1.5 ps pulses at 500 MHz, corresponding to a peak power of 0.4 kW. Its center wavelength is 965 nm which is ideally suited for two-photon excitation of the widely used Green Fluorescent Protein (GFP) marker as it virtually matches its twophoton action cross section. We reveal that it is possible to obtain two photon excited fluorescence images of GFP labeled neurons and secondharmonic generation images of pharynx and body wall muscles in living C. elegans nematodes. Our results demonstrate that this compact laser is well suited for long-term time-lapse imaging of living samples as very low powers provide a bright signal. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices, facilitating its wide-spread adoption in "real-life" applications.

Semiconductor ring lasers coupled by a single waveguide

NASA Astrophysics Data System (ADS)

Coomans, W.; Gelens, L.; Van der Sande, G.; Mezosi, G.; Sorel, M.; Danckaert, J.; Verschaffelt, G.

2012-06-01

We experimentally and theoretically study the characteristics of semiconductor ring lasers bidirectionally coupled by a single bus waveguide. This configuration has, e.g., been suggested for use as an optical memory and as an optical neural network motif. The main results are that the coupling can destabilize the state in which both rings lase in the same direction, and it brings to life a state with equal powers at both outputs. These are both undesirable for optical memory operation. Although the coupling between the rings is bidirectional, the destabilization occurs due to behavior similar to an optically injected laser system.

Control over high peak-power laser light and laser-driven X-rays

NASA Astrophysics Data System (ADS)

Zhao, Baozhen; Banerjee, Sudeep; Yan, Wenchao; Zhang, Ping; Zhang, Jun; Golovin, Grigory; Liu, Cheng; Fruhling, Colton; Haden, Daniel; Chen, Shouyuan; Umstadter, Donald

2018-04-01

An optical system was demonstrated that enables continuous control over the peak power level of ultrashort duration laser light. The optical characteristics of amplified and compressed femtosecond-duration light from a chirped-pulse amplification laser are shown to remain invariant and maintain high-fidelity using this system. When the peak power was varied by an order-of-magnitude, up to its maximum attainable value, the phase, spectral bandwidth, polarization state, and focusability of the light remained constant. This capability led to precise control of the focused laser intensity and enabled a correspondingly high level of control over the power of an all-laser-driven Thomson X-ray light source.

Integrated injection-locked semiconductor diode laser

DOEpatents

Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1991-01-01

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

Integrated injection-locked semiconductor diode laser

DOEpatents

Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

1991-02-19

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

Study on the near-field non-linearity (SMILE) of high power diode laser arrays

NASA Astrophysics Data System (ADS)

Zhang, Hongyou; Jia, Yangtao; Li, Changxuan; Zah, Chung-en; Liu, Xingsheng

2018-02-01

High power laser diodes have been found a wide range of industrial, space, medical applications, characterized by high conversion efficiency, small size, light weight and a long lifetime. However, due to thermal induced stress, each emitter in a semiconductor laser bar or array is displaced along p-n junction, resulting of each emitter is not in a line, called Near-field Non-linearity. Near-field Non-linearity along laser bar (also known as "SMILE") determines the outcome of optical coupling and beam shaping [1]. The SMILE of a laser array is the main obstacle to obtain good optical coupling efficiency and beam shaping from a laser array. Larger SMILE value causes a larger divergence angle and a wider line after collimation and focusing, respectively. In this letter, we simulate two different package structures based on MCC (Micro Channel Cooler) with Indium and AuSn solders, including the distribution of normal stress and the SMILE value. According to the theoretical results, we found the distribution of normal stress on laser bar shows the largest in the middle and drops rapidly near both ends. At last, we did another experiment to prove that the SMILE value of a laser bar was mainly affected by the die bonding process, rather than the operating condition.

Accuracy of Petermann's K-factor in the theory of semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

El Mashade, M.B.; Arnaud, J.

1986-04-01

Petermann has proposed that the classical formula for the linewidth of a laser be multiplied by a factor K >> 1 in the case of gain-guided semiconductor lasers. The concept of power in the mode used by that author, however, is not well defined in a waveguide with gain, and his theory is therefore opened to question. The analysis given here avoids this difficulty and nevertheless agrees with Petermann's result. This is because spatial mode filtering is strong in oscillating lasers.

Single crystal fibers for high power lasers

NASA Astrophysics Data System (ADS)

Kim, W.; Florea, C.; Baker, C.; Gibson, D.; Shaw, L. B.; Bowman, S.; O'Connor, S.; Villalobos, G.; Bayya, S.; Aggarwal, I. D.; Sanghera, J. S.

2012-11-01

In this paper, we present our recent results in developing cladded-single crystal fibers for high power single frequency fiber lasers significantly exceeding the capabilities of existing silica fiber based lasers. This fiber laser would not only exploit the advantages of crystals, namely their high temperature stability, high thermal conductivity, superior environmental ruggedness, high propensity for rare earth ion doping and low nonlinearity, but will also provide the benefits from an optical fiber geometry to enable better thermal management thereby enabling the potential for high laser power output in short lengths. Single crystal fiber cores with diameters as small as 35μm have been drawn using high purity rare earth doped ceramic or single crystal feed rods by Laser Heated Pedestal Growth (LHPG) process. The mechanical, optical and morphological properties of these fibers have been characterized. The fibers are very flexible and show good overall uniformity. We also measured the optical loss as well as the non-radiative loss of the doped crystal fibers and the results show that the fibers have excellent optical and morphological quality. The gain coefficient of the crystal fiber matches the low quantum defect laser model and it is a good indication of the high quality of the fibers.

Efficiency of soft tissue incision with a novel 445-nm semiconductor laser.

PubMed

Braun, Andreas; Kettner, Moritz; Berthold, Michael; Wenzler, Johannes-Simon; Heymann, Paul Günther Baptist; Frankenberger, Roland

2018-01-01

Using a 445-nm semiconductor laser for tissue incision, an effective cut is expected due to the special absorption properties of blue laser light in soft tissues. The aim of the present study was the histological evaluation of tissue samples after incision with a 445-nm diode laser. Forty soft tissue specimens were obtained from pork oral mucosa and mounted on a motorized linear translation stage. The handpiece of a high-frequency surgery device, a 970-nm semiconductor laser, and a 445-nm semiconductor laser were connected to the slide, allowing a constant linear movement (2 mm/s) and the same distance of the working tip to the soft tissue's surface. Four incisions were made each: (I) 970-nm laser with conditioned fiber tip, contact mode at 3-W cw; (II-III): 445-nm laser with non-conditioned fiber tip, contact mode at 2-W cw, and non-contact mode (1 mm) at 2 W; and (IV): high-frequency surgery device with straight working tip, 90° angulation, contact mode at 50 W. Histological analysis was performed after H&E staining of the embedded specimens at 35-fold magnification. The comparison of the incision depths showed a significant difference depending on the laser wavelength and the selected laser parameters. The highest incision depth was achieved with the 445-nm laser contact mode (median depth 0.61 mm, min 0.26, max 1.17, interquartile range 0.58) (p < 0.05) with the lowest amount of soft tissue denaturation (p < 0.05). The lowest incision depth was measured for the high-frequency surgical device (median depth 0.36 mm, min 0.12, max 1.12, interquartile range 0.23) (p < 0.05). Using a 445-nm semiconductor laser, a higher cutting efficiency can be expected when compared with a 970-nm diode laser and high-frequency surgery. Even the 445-nm laser application in non-contact mode shows clinically acceptable incision depths without signs of extensive soft tissue denaturation.

Apparatus for advancing a wellbore using high power laser energy

DOEpatents

Zediker, Mark S.; Land, Mark S.; Rinzler, Charles C.; Faircloth, Brian O.; Koblick, Yeshaya; Moxley, Joel F.

2014-09-02

Delivering high power laser energy to form a borehole deep into the earth using laser energy. Down hole laser tools, laser systems and laser delivery techniques for advancement, workover and completion activities. A laser bottom hole assembly (LBHA) for the delivery of high power laser energy to the surfaces of a borehole, which assembly may have laser optics, a fluid path for debris removal and a mechanical means to remove earth.

High-power, surface-emitting quantum cascade laser operating in a symmetric grating mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boyle, C.; Sigler, C.; Kirch, J. D.

2016-03-21

Grating-coupled surface-emitting (GCSE) lasers generally operate with a double-lobed far-field beam pattern along the cavity-length direction, which is a result of lasing being favored in the antisymmetric grating mode. We experimentally demonstrate a GCSE quantum-cascade laser design allowing high-power, nearly single-lobed surface emission parallel to the longitudinal cavity. A 2nd-order Au-semiconductor distributed-feedback (DFB)/distributed-Bragg-reflector (DBR) grating is used for feedback and out-coupling. The DFB and DBR grating regions are 2.55 mm- and 1.28 mm-long, respectively, for a total grating length of 5.1 mm. The lasers are designed to operate in a symmetric (longitudinal) grating mode by causing resonant coupling of the guided optical modemore » to the antisymmetric surface-plasmon modes of the 2nd-order metal/semiconductor grating. Then, the antisymmetric modes are strongly absorbed by the metal in the grating, causing the symmetric mode to be favored to lase, which, in turn, produces a single-lobed beam over a range of grating duty-cycle values of 36%–41%. Simulations indicate that the symmetric mode is always favored to lase, independent of the random phase of reflections from the device's cleaved ends. Peak pulsed output powers of ∼0.4 W were measured with nearly single-lobe beam-pattern (in the longitudinal direction), single-spatial-mode operation near 4.75 μm wavelength. Far-field measurements confirm a diffraction-limited beam pattern, in agreement with simulations, for a source-to-detector separation of 2 m.« less

Atmospheric propagation and combining of high power lasers: comment.

PubMed

Goodno, Gregory D; Rothenberg, Joshua E

2016-10-10

Nelson et al. [Appl. Opt.55, 1757 (2016)APOPAI0003-693510.1364/AO.55.001757] recently concluded that coherent beam combining and remote phase locking of high-power lasers are fundamentally limited by the laser source linewidth. These conclusions are incorrect and not relevant to practical high-power coherently combined laser architectures.

Beam-guidance optics for high-power fiber laser systems

NASA Astrophysics Data System (ADS)

Mohring, Bernd; Tassini, Leonardo; Protz, Rudolf; Zoz, Jürgen

2013-05-01

The realization of a high-energy laser weapon system by coupling a large number of industrial high-power fiber lasers is investigated. To perform the combination of the individual beams of the different fiber lasers within the optical path of the laser weapon, a special optical set-up is used. Each optical component is realized either as reflective component oras refractive optics. Both possibilities were investigated by simulations and experiments. From the results, the general aspects for the layout of the beam-guidance optics for a high-power fiber laser system are derived.

Application and the key technology on high power fiber-optic laser in laser weapon

NASA Astrophysics Data System (ADS)

Qu, Zhou; Li, Qiushi; Meng, Haihong; Sui, Xin; Zhang, Hongtao; Zhai, Xuhua

2014-12-01

The soft-killing laser weapon plays an important role in photoelectric defense technology. It can be used for photoelectric detection, search, blinding of photoelectric sensor and other devices on fire control and guidance devices, therefore it draws more and more attentions by many scholars. High power fiber-optic laser has many virtues such as small volume, simple structure, nimble handling, high efficiency, qualified light beam, easy thermal management, leading to blinding. Consequently, it may be used as the key device of soft-killing laser weapon. The present study introduced the development of high power fiber-optic laser and its main features. Meanwhile the key technology of large mode area (LMA) optical fiber design, the beam combination technology, double-clad fiber technology and pumping optical coupling technology was stated. The present study is aimed to design high doping LMA fiber, ensure single mode output by increasing core diameter and decrease NA. By means of reducing the spontaneous emission particle absorbed by fiber core and Increasing the power density in the optical fiber, the threshold power of nonlinear effect can increase, and the power of single fiber will be improved. Meantime, high power will be obtained by the beam combination technology. Application prospect of high power fiber laser in photoelectric defense technology was also set forth. Lastly, the present study explored the advantages of high power fiber laser in photoelectric defense technology.

Large aspheric optics for high-power, high-energy laser

NASA Astrophysics Data System (ADS)

Geyl, Roland; Houbre, Francois

2001-12-01

SAGEM, within its REOSC high performance optics product line, has developed through the years a specific knowledge in large plano, spherical and aspherical optics for high energy or high power laser. This paper is aimed to illustrate the application of aspheric optics for such laser application with several examples of increasing optical surface complexity.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Behavior of gain-guided lasers generating high-power nanosecond pulses

NASA Astrophysics Data System (ADS)

Erbert, G.

1988-11-01

Computer-controlled apparatus was used in an investigation of gain-guided narrow-stripe AlGaAs double heterostructure lasers. These lasers were excited with current pulses of 10 ns duration and amplitudes up to 3 A. The watt-ampere characteristics together with near- and far-field radiation patterns were considered using an analytic model of the lasers. The results showed that the values of the gain under a stripe contact or of the absorption outside this region varied with the output power.

Advances in high power linearly polarized fiber laser and its application

NASA Astrophysics Data System (ADS)

Zhou, Pu; Huang, Long; Ma, Pengfei; Xu, Jiangming; Su, Rongtao; Wang, Xiaolin

2017-10-01

Fiber lasers are now attracting more and more research interest due to their advantages in efficiency, beam quality and flexible operation. Up to now, most of the high power fiber lasers have random distributed polarization state. Linearlypolarized (LP) fiber lasers, which could find wide application potential in coherent detection, coherent/spectral beam combining, nonlinear frequency conversion, have been a research focus in recent years. In this paper, we will present a general review on the achievements of various kinds of high power linear-polarized fiber laser and its application. The recent progress in our group, including power scaling by using power amplifier with different mechanism, high power linearly polarized fiber laser with diversified properties, and various applications of high power linear-polarized fiber laser, are summarized. We have achieved 100 Watt level random distributed feedback fiber laser, kilowatt level continuous-wave (CW) all-fiber polarization-maintained fiber amplifier, 600 watt level average power picosecond polarization-maintained fiber amplifier and 300 watt level average power femtosecond polarization-maintained fiber amplifier. In addition, high power linearly polarized fiber lasers have been successfully applied in 5 kilowatt level coherent beam combining, structured light field and ultrasonic generation.

Transient Plasma Photonic Crystals for High-Power Lasers.

PubMed

Lehmann, G; Spatschek, K H

2016-06-03

A new type of transient photonic crystals for high-power lasers is presented. The crystal is produced by counterpropagating laser beams in plasma. Trapped electrons and electrically forced ions generate a strong density grating. The lifetime of the transient photonic crystal is determined by the ballistic motion of ions. The robustness of the photonic crystal allows one to manipulate high-intensity laser pulses. The scheme of the crystal is analyzed here by 1D Vlasov simulations. Reflection or transmission of high-power laser pulses are predicted by particle-in-cell simulations. It is shown that a transient plasma photonic crystal may act as a tunable mirror for intense laser pulses. Generalizations to 2D and 3D configurations are possible.

Completely monolithic linearly polarized high-power fiber laser oscillator

NASA Astrophysics Data System (ADS)

Belke, Steffen; Becker, Frank; Neumann, Benjamin; Ruppik, Stefan; Hefter, Ulrich

2014-03-01

We have demonstrated a linearly polarized cw all-in-fiber oscillator providing 1 kW of output power and a polarization extinction ratio (PER) of up to 21.7 dB. The design of the laser oscillator is simple and consists of an Ytterbium-doped polarization maintaining large mode area (PLMA) fiber and suitable fiber Bragg gratings (FBG) in matching PLMA fibers. The oscillator has nearly diffraction-limited beam quality (M² < 1.2). Pump power is delivered via a high power 6+1:1 pump coupler. The slope efficiency of the laser is 75 %. The electro/optical efficiency of the complete laser system is ~30 % and hence in the range of Rofin's cw non-polarized fiber lasers. Choosing an adequate bending diameter for the Yb-doped PLMA fiber, one polarization mode as well as higher order modes are sufficiently supressed1. Resulting in a compact and robust linearly polarized high power single mode laser without external polarizing components. Linearly polarized lasers are well established for one dimensional cutting or welding applications. Using beam shaping optics radially polarized laser light can be generated to be independent from the angle of incident to the processing surface. Furthermore, high power linearly polarized laser light is fundamental for nonlinear frequency conversion of nonlinear materials.

Control system for high power laser drilling workover and completion unit

DOEpatents

Zediker, Mark S; Makki, Siamak; Faircloth, Brian O; DeWitt, Ronald A; Allen, Erik C; Underwood, Lance D

2015-05-12

A control and monitoring system controls and monitors a high power laser system for performing high power laser operations. The control and monitoring system is configured to perform high power laser operation on, and in, remote and difficult to access locations.

High-power direct-diode laser successes

NASA Astrophysics Data System (ADS)

Haake, John M.; Zediker, Mark S.

2004-06-01

Direct diode laser will become much more prevalent in the solar system of manufacturing due to their high efficiency, small portable size, unique beam profiles, and low ownership costs. There has been many novel applications described for high power direct diode laser [HPDDL] systems but few have been implemented in extreme production environments due to diode and diode system reliability. We discuss several novel applications in which the HPDDL have been implemented and proven reliable and cost-effective in production environments. These applications are laser hardening/surface modification, laser wire feed welding and laser paint stripping. Each of these applications uniquely tests the direct diode laser systems capabilities and confirms their reliability in production environments. A comparison of the advantages direct diode laser versus traditional industrial lasers such as CO2 and Nd:YAG and non-laser technologies such a RF induction, and MIG welders for each of these production applications is presented.

High-Power, High-Intensity Laser Propagation and Interactions

DTIC Science & Technology

2014-03-10

wave Brillouin mixing [89,90]. transmitted beam is phase conjugated target initial wave front nn  1 turbulent air Figure 14. Using phase and...discussed in connection with both high-power and high-intensity lasers is propagation in a turbulent atmosphere . Laser propagation in atmospheric ... turbulence can results in beam centroid wander, spreading and intensity scintillation. A phase conjugation technique to mitigate the effects of atmospheric

High power gas laser amplifier

DOEpatents

Leland, Wallace T.; Stratton, Thomas F.

1981-01-01

A high power output CO.sub.2 gas laser amplifier having a number of sections, each comprising a plurality of annular pumping chambers spaced around the circumference of a vacuum chamber containing a cold cathode, gridded electron gun. The electron beam from the electron gun ionizes the gas lasing medium in the sections. An input laser beam is split into a plurality of annular beams, each passing through the sections comprising one pumping chamber.

High-power laser diodes with high polarization purity

NASA Astrophysics Data System (ADS)

Rosenkrantz, Etai; Yanson, Dan; Peleg, Ophir; Blonder, Moshe; Rappaport, Noam; Klumel, Genady

2017-02-01

Fiber-coupled laser diode modules employ power scaling of single emitters for fiber laser pumping. To this end, techniques such as geometrical, spectral and polarization beam combining (PBC) are used. For PBC, linear polarization with high degree of purity is important, as any non-perfectly polarized light leads to losses and heating. Furthermore, PBC is typically performed in a collimated portion of the beams, which also cancels the angular dependence of the PBC element, e.g., beam-splitter. However, we discovered that single emitters have variable degrees of polarization, which depends both on the operating current and far-field divergence. We present data to show angle-resolved polarization measurements that correlate with the ignition of high-order modes in the slow-axis emission of the emitter. We demonstrate that the ultimate laser brightness includes not only the standard parameters such as power, emitting area and beam divergence, but also the degree of polarization (DoP), which is a strong function of the latter. Improved slow-axis divergence, therefore, contributes not only to high brightness but also high beam combining efficiency through polarization.

High Power Laser Hybrid Welding - Challenges and Perspectives

NASA Astrophysics Data System (ADS)

Nielsen, Steen Erik

High power industrial lasers at power levels up to 100 kW is now available on the market. Therefore, welding of thicker materials has become of interest for the heavy metal industry e.g. shipyards and wind mill producers. Further, the power plant industry, producers of steel pipes, heavy machinery and steel producers are following this new technology with great interest. At Lindø Welding Technology (LWT), which is a subsidiary to FORCE Technology, a 32-kwatt disc laser is installed. At this laser facility, welding procedures related to thick section steel applications are developed. Material thicknesses between 40 and 100 mm are currently of interest. This paper describes some of the challenges that are related to the development of the high power hybrid laser welding process as well as to the perspectives for the technology as a production tool for the heavy metal industry.

Development of high-power dye laser chain

NASA Astrophysics Data System (ADS)

Konagai, Chikara; Kimura, Hironobu; Fukasawa, Teruichiro; Seki, Eiji; Abe, Motohisa; Mori, Hideo

2000-01-01

Copper vapor laser (CVL) pumped dye laser (DL) system, both in a master oscillator power amplifier (MOPA) configuration, has been developed for Atomic Vapor Isotope Separation program in Japan. Dye laser output power of about 500 W has been proved in long-term operations over 200 hours. High power fiber optic delivery system is utilized in order to efficiently transport kilowatt level CVL beams to the DL MOPA. Single model CVL pumped DL oscillator has been developed and worked for 200 hours within +/- 0.1 pm wavelength stability. Phase modulator for spreading spectrum to the linewidth of hyperfine structure has been developed and demonstrated.

High power, high contrast hybrid femtosecond laser systems

NASA Astrophysics Data System (ADS)

Dabu, Razvan

2017-06-01

For many research applications a very high laser intensity of more than 1022 W/cm2 in the focused beam is required. If a laser intensity of about 1011W/cm2 is reached on the target before the main laser pulse, the generated pre-plasma disturbs the experiment. High power femtosecond lasers must be tightly focused to get high intensity and in the same time must have a high enough intensity contrast of the temporally compressed amplified pulses. Reaching an intensity contrast in the range of 1012 represents a challenging task for a Ti:sapphire CPA laser. Hybrid femtosecond lasers combine optical parametric chirped pulsed amplification (OPCPA) in nonlinear crystals with the chirped pulse amplification (CPA) in laser active media. OPCPA provides large amplification spectral bandwidth and improves the intensity contrast of the amplified pulses. A key feature of these systems consists in the adaptation of the parametric amplification phase-matching bandwidth of nonlinear crystals to the spectral gain bandwidth of laser amplifying Ti:sapphire crystals. OPCPA in BBO crystals up to mJ energy level in the laser Front-End, followed by CPA up to ten/hundred Joules in large aperture Ti:sapphire crystals, represents a suitable solution for PW-class femtosecond lasers. The configuration and expected output beam characteristics of the hybrid amplification 2 × 10 PW ELI-NP laser are described.

Multiphoton in vivo imaging with a femtosecond semiconductor disk laser

PubMed Central

Voigt, Fabian F.; Emaury, Florian; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-01-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging. PMID:28717563

High power laser workover and completion tools and systems

DOEpatents

Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O; Koblick, Yeshaya; Moxley, Joel F

2014-10-28

Workover and completion systems, devices and methods for utilizing 10 kW or more laser energy transmitted deep into the earth with the suppression of associated nonlinear phenomena. Systems and devices for the laser workover and completion of a borehole in the earth. These systems and devices can deliver high power laser energy down a deep borehole, while maintaining the high power to perform laser workover and completion operations in such boreholes deep within the earth.

Visible high power fiber coupled diode lasers

NASA Astrophysics Data System (ADS)

Köhler, Bernd; Drovs, Simon; Stoiber, Michael; Dürsch, Sascha; Kissel, Heiko; Könning, Tobias; Biesenbach, Jens; König, Harald; Lell, Alfred; Stojetz, Bernhard; Löffler, Andreas; Strauß, Uwe

2018-02-01

In this paper we report on further development of fiber coupled high-power diode lasers in the visible spectral range. New visible laser modules presented in this paper include the use of multi single emitter arrays @ 450 nm leading to a 120 W fiber coupled unit with a beam quality of 44 mm x mrad, as well as very compact modules with multi-W output power from 405 nm to 640 nm. However, as these lasers are based on single emitters, power scaling quickly leads to bulky laser units with a lot of optical components to be aligned. We also report on a new approach based on 450 nm diode laser bars, which dramatically reduces size and alignment effort. These activities were performed within the German government-funded project "BlauLas": a maximum output power of 80 W per bar has been demonstrated @ 450 nm. We show results of a 200 μm NA0.22 fiber coupled 35 W source @ 450 nm, which has been reduced in size by a factor of 25 compared to standard single emitter approach. In addition, we will present a 200 μm NA0.22 fiber coupled laser unit with an output power of 135 W.

High brightness diode lasers controlled by volume Bragg gratings

NASA Astrophysics Data System (ADS)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

High mobility emissive organic semiconductor

PubMed Central

Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

2015-01-01

The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

Modulation Effects in Multi-Section Semiconductor Lasers (Postprint)

DTIC Science & Technology

2013-01-01

resonant modulation of semiconductor lasers beyond relaxation oscillation frequency,” Appl. Phys. Lett., 63, 1459–1461 (1993). [26] J. Helms and K. Petermann ...5, 4–6 (1993). [28] K. Petermann , “External optical feedback phenomena in semiconductor lasers,” IEEE J. Sel. Top. Quantum Elec- tron., 1, 480–489

Final Report: High Power Semiconductor Laser Sources,

DTIC Science & Technology

1989-01-01

Mittelstein, Yasuhiko Arakawa, ) Anders Larssonb) and Amnon Yariv California Institute of Technology, Pasadena, California 91 125~412 (Received 7 July...Electronics and Commu- nication Engineers of Japan. He is a member of the Institute of Electronics Yasuhiko Arakawa S󈨑-M󈨔) was born in Ai- and...Gain, Modulation Response, and Spectral Linewidth in AlGaAs Quantum Well Lasers YASUHIKO ARAKAWA. MEMBER, IEEE. AND AMNON YARIV. FELLOW. IEEE Abstract

Thermal modeling of wide bandgap semiconductor devices for high frequency power converters

NASA Astrophysics Data System (ADS)

Sharath Sundar Ram, S.; Vijayakumari, A.

2018-02-01

The emergence of wide bandgap semiconductors has led to development of new generation semiconductor switches that are highly efficient and scalable. To exploit the advantages of GaNFETs in power converters, in terms of reduction in the size of heat sinks and filters, a thorough understanding of the thermal behavior of the device is essential. This paper aims to establish a thermal model for wideband gap semiconductor GaNFETs commercially available, which will enable power electronic designers to obtain the thermal characteristics of the device more effectively. The model parameters is obtained from the manufacturer’s data sheet by adopting an exponential curve fitting technique and the thermal model is validated using PSPICE simulations. The model was developed based on the parametric equivalence that exists between the thermal and electrical components, such that it responds for transient thermal stresses. A suitable power profile has been generated to evaluate the GaNFET model under different power dissipation scenarios. The results were compared with a Silicon MOSFETs to further highlight the advantages of the GaN devices. The proposed modeling approach can be extended for other GaN devices and can provide a platform for the thermal study and heat sink optimization.

High-Power Growth-Robust InGaAs/InAlAs Terahertz Quantum Cascade Lasers.

PubMed

Deutsch, Christoph; Kainz, Martin Alexander; Krall, Michael; Brandstetter, Martin; Bachmann, Dominic; Schönhuber, Sebastian; Detz, Hermann; Zederbauer, Tobias; MacFarland, Donald; Andrews, Aaron Maxwell; Schrenk, Werner; Beck, Mattias; Ohtani, Keita; Faist, Jérôme; Strasser, Gottfried; Unterrainer, Karl

2017-04-19

We report on high-power terahertz quantum cascade lasers based on low effective electron mass InGaAs/InAlAs semiconductor heterostructures with excellent reproducibility. Growth-related asymmetries in the form of interface roughness and dopant migration play a crucial role in this material system. These bias polarity dependent phenomena are studied using a nominally symmetric active region resulting in a preferential electron transport in the growth direction. A structure based on a three-well optical phonon depletion scheme was optimized for this bias direction. Depending on the sheet doping density, the performance of this structure shows a trade-off between high maximum operating temperature and high output power. While the highest operating temperature of 155 K is observed for a moderate sheet doping density of 2 × 10 10 cm -2 , the highest peak output power of 151 mW is found for 7.3 × 10 10 cm -2 . Furthermore, by abutting a hyperhemispherical GaAs lens to a device with the highest doping level a record output power of 587 mW is achieved for double-metal waveguide structures.

High-Power Growth-Robust InGaAs/InAlAs Terahertz Quantum Cascade Lasers

PubMed Central

2017-01-01

We report on high-power terahertz quantum cascade lasers based on low effective electron mass InGaAs/InAlAs semiconductor heterostructures with excellent reproducibility. Growth-related asymmetries in the form of interface roughness and dopant migration play a crucial role in this material system. These bias polarity dependent phenomena are studied using a nominally symmetric active region resulting in a preferential electron transport in the growth direction. A structure based on a three-well optical phonon depletion scheme was optimized for this bias direction. Depending on the sheet doping density, the performance of this structure shows a trade-off between high maximum operating temperature and high output power. While the highest operating temperature of 155 K is observed for a moderate sheet doping density of 2 × 1010 cm–2, the highest peak output power of 151 mW is found for 7.3 × 1010 cm–2. Furthermore, by abutting a hyperhemispherical GaAs lens to a device with the highest doping level a record output power of 587 mW is achieved for double-metal waveguide structures. PMID:28470028

High-power VCSELs for smart munitions

NASA Astrophysics Data System (ADS)

Geske, Jon; MacDougal, Michael; Cole, Garrett; Snyder, Donald

2006-08-01

The next generation of low-cost smart munitions will be capable of autonomously detecting and identifying targets aided partly by the ability to image targets with compact and robust scanning rangefinder and LADAR capabilities. These imaging systems will utilize arrays of high performance, low-cost semiconductor diode lasers capable of achieving high peak powers in pulses ranging from 5 to 25 nanoseconds in duration. Aerius Photonics is developing high-power Vertical-Cavity Surface-Emitting Lasers (VCSELs) to meet the needs of these smart munitions applications. The authors will report the results of Aerius' development program in which peak pulsed powers exceeding 60 Watts were demonstrated from single VCSEL emitters. These compact packaged emitters achieved pulse energies in excess of 1.5 micro-joules with multi kilo-hertz pulse repetition frequencies. The progress of the ongoing effort toward extending this performance to arrays of VCSEL emitters and toward further improving laser slope efficiency will be reported.

Monolithic integration of microfluidic channels and semiconductor lasers.

PubMed

Cran-McGreehin, Simon J; Dholakia, Kishan; Krauss, Thomas F

2006-08-21

We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.

Monolithic integration of microfluidic channels and semiconductor lasers

NASA Astrophysics Data System (ADS)

Cran-McGreehin, Simon J.; Dholakia, Kishan; Krauss, Thomas F.

2006-08-01

We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.

Characterization of High-power Quasi-cw Laser Diode Arrays

NASA Technical Reports Server (NTRS)

Stephen, Mark A.; Vasilyev, Aleksey; Troupaki, Elisavet; Allan, Graham R.; Kashem, Nasir B.

2005-01-01

NASA s requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented.

Artificial Neuron Based on Integrated Semiconductor Quantum Dot Mode-Locked Lasers

NASA Astrophysics Data System (ADS)

Mesaritakis, Charis; Kapsalis, Alexandros; Bogris, Adonis; Syvridis, Dimitris

2016-12-01

Neuro-inspired implementations have attracted strong interest as a power efficient and robust alternative to the digital model of computation with a broad range of applications. Especially, neuro-mimetic systems able to produce and process spike-encoding schemes can offer merits like high noise-resiliency and increased computational efficiency. Towards this direction, integrated photonics can be an auspicious platform due to its multi-GHz bandwidth, its high wall-plug efficiency and the strong similarity of its dynamics under excitation with biological spiking neurons. Here, we propose an integrated all-optical neuron based on an InAs/InGaAs semiconductor quantum-dot passively mode-locked laser. The multi-band emission capabilities of these lasers allows, through waveband switching, the emulation of the excitation and inhibition modes of operation. Frequency-response effects, similar to biological neural circuits, are observed just as in a typical two-section excitable laser. The demonstrated optical building block can pave the way for high-speed photonic integrated systems able to address tasks ranging from pattern recognition to cognitive spectrum management and multi-sensory data processing.

Artificial Neuron Based on Integrated Semiconductor Quantum Dot Mode-Locked Lasers

PubMed Central

Mesaritakis, Charis; Kapsalis, Alexandros; Bogris, Adonis; Syvridis, Dimitris

2016-01-01

Neuro-inspired implementations have attracted strong interest as a power efficient and robust alternative to the digital model of computation with a broad range of applications. Especially, neuro-mimetic systems able to produce and process spike-encoding schemes can offer merits like high noise-resiliency and increased computational efficiency. Towards this direction, integrated photonics can be an auspicious platform due to its multi-GHz bandwidth, its high wall-plug efficiency and the strong similarity of its dynamics under excitation with biological spiking neurons. Here, we propose an integrated all-optical neuron based on an InAs/InGaAs semiconductor quantum-dot passively mode-locked laser. The multi-band emission capabilities of these lasers allows, through waveband switching, the emulation of the excitation and inhibition modes of operation. Frequency-response effects, similar to biological neural circuits, are observed just as in a typical two-section excitable laser. The demonstrated optical building block can pave the way for high-speed photonic integrated systems able to address tasks ranging from pattern recognition to cognitive spectrum management and multi-sensory data processing. PMID:27991574

808nm high-power high-efficiency GaAsP/GaInP laser bars

NASA Astrophysics Data System (ADS)

Wang, Ye; Yang, Ye; Qin, Li; Wang, Chao; Yao, Di; Liu, Yun; Wang, Lijun

2008-11-01

808nm high power diode lasers, which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems, have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers, and they could lead to new applications where space, weight and electrical power are critical. High efficiency devices generate less waste heat, which means less strain on the cooling system and more tolerance to thermal conductivity variation, a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GaInP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200μs, 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars, we fabricate a 1x3 arrays, the maximum power is 64.3W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A, the slope efficiency is 3.37 W/A.

A modular optically powered floating high voltage generator.

PubMed

Antonini, P; Borsato, E; Carugno, G; Pegoraro, M; Zotto, P

2013-02-01

The feasibility of fully floating high voltage (HV) generation was demonstrated producing a prototype of a modular HV system. The primary power source is provided by a high efficiency semiconductor power cell illuminated by a laser system ensuring the floating nature of each module. The HV is then generated by dc-dc conversion and a HV multiplier. The possibility of series connection among modules was verified.

High power high repetition rate VCSEL array side-pumped pulsed blue laser

NASA Astrophysics Data System (ADS)

van Leeuwen, Robert; Zhao, Pu; Chen, Tong; Xu, Bing; Watkins, Laurence; Seurin, Jean-Francois; Xu, Guoyang; Miglo, Alexander; Wang, Qing; Ghosh, Chuni

2013-03-01

High power, kW-class, 808 nm pump modules based on the vertical-cavity surface-emitting laser (VCSEL) technology were developed for side-pumping of solid-state lasers. Two 1.2 kW VCSEL pump modules were implemented in a dual side-pumped Q-switched Nd:YAG laser operating at 946 nm. The laser output was frequency doubled in a BBO crystal to produce pulsed blue light. With 125 μs pump pulses at a 300 Hz repetition rate 6.1 W QCW 946 nm laser power was produced. The laser power was limited by thermal lensing in the Nd:YAG rod.

Research and development of neodymium phosphate laser glass for high power laser application

NASA Astrophysics Data System (ADS)

Hu, Lili; He, Dongbing; Chen, Huiyu; Wang, Xin; Meng, Tao; Wen, Lei; Hu, Junjiang; Xu, Yongchun; Li, Shunguang; Chen, Youkuo; Chen, Wei; Chen, Shubin; Tang, Jingping; Wang, Biao

2017-01-01

Neodymium phosphate laser glass is a key optical element for high-power laser facility. In this work, the latest research and development of neodymium phosphate laser glass at the Shanghai Institute of Optics and Fine Mechanics (SIOM), China, is addressed. Neodymium phosphate laser glasses, N31, N41, NAP2, and NAP4, for high peak power and high average power applications have been developed. The properties of these glasses are presented and compared to those of other commercial neodymium phosphate laser glass from the Schott and Hoya companies and the Vavilov State Optical Institute (GOI), Russia. Continuous melting and edge cladding are the two key fabrication techniques that are used for the mass production of neodymium phosphate laser glass slabs. These techniques for the fabrication of large-aperture N31 neodymium phosphate laser glass slabs with low stress birefringence and residual reflectivity have been developed by us The effect of acid etching on the microstructure, optical transmission, and mechanical properties of NAP2 glass is also discussed.

Research and development of neodymium phosphate laser glass for high power laser application

NASA Astrophysics Data System (ADS)

Hu, Lili; He, Dongbing; Chen, Huiyu; Wang, Xin; Meng, Tao; Wen, Lei; Hu, Junjiang; Xu, Yongchun; Li, Shunguang; Chen, Youkuo; Chen, Wei; Chen, Shubin; Tang, Jingping; Wang, Biao

2016-12-01

Neodymium phosphate laser glass is a key optical element for high-power laser facility. In this work, the latest research and development of neodymium phosphate laser glass at the Shanghai Institute of Optics and Fine Mechanics (SIOM), China, is addressed. Neodymium phosphate laser glasses, N31, N41, NAP2, and NAP4, for high peak power and high average power applications have been developed. The properties of these glasses are presented and compared to those of other commercial neodymium phosphate laser glass from the Schott and Hoya companies and the Vavilov State Optical Institute (GOI), Russia. Continuous melting and edge cladding are the two key fabrication techniques that are used for the mass production of neodymium phosphate laser glass slabs. These techniques for the fabrication of large-aperture N31 neodymium phosphate laser glass slabs with low stress birefringence and residual reflectivity have been developed by us The effect of acid etching on the microstructure, optical transmission, and mechanical properties of NAP2 glass is also discussed.

New developments in power semiconductors

NASA Technical Reports Server (NTRS)

Sundberg, G. R.

1983-01-01

This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

Coherent beam combiner for a high power laser

DOEpatents

Dane, C. Brent; Hackel, Lloyd A.

2002-01-01

A phase conjugate laser mirror employing Brillouin-enhanced four wave mixing allows multiple independent laser apertures to be phase locked producing an array of diffraction-limited beams with no piston phase errors. The beam combiner has application in laser and optical systems requiring high average power, high pulse energy, and low beam divergence. A broad range of applications exist in laser systems for industrial processing, especially in the field of metal surface treatment and laser shot peening.

Design and characterization of a novel power over fiber system integrating a high power diode laser

NASA Astrophysics Data System (ADS)

Perales, Mico; Yang, Mei-huan; Wu, Cheng-liang; Hsu, Chin-wei; Chao, Wei-sheng; Chen, Kun-hsein; Zahuranec, Terry

2017-02-01

High power 9xx nm diode lasers along with MH GoPower's (MHGP's) flexible line of Photovoltaic Power Converters (PPCs) are spurring high power applications for power over fiber (PoF), including applications for powering remote sensors and sensors monitoring high voltage equipment, powering high voltage IGBT gate drivers, converters used in RF over Fiber (RFoF) systems, and system power applications, including powering UAVs. In PoF, laser power is transmitted over fiber, and is converted to electricity by photovoltaic cells (packaged into Photovoltaic Power Converters, or PPCs) which efficiently convert the laser light. In this research, we design a high power multi-channel PoF system, incorporating a high power 976 nm diode laser, a cabling system with fiber break detection, and a multichannel PPC-module. We then characterizes system features such as its response time to system commands, the PPC module's electrical output stability, the PPC-module's thermal response, the fiber break detection system response, and the diode laser optical output stability. The high power PoF system and this research will serve as a scalable model for those interested in researching, developing, or deploying a high power, voltage isolated, and optically driven power source for high reliability utility, communications, defense, and scientific applications.

Digital optical signal processing with polarization-bistable semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jai-Ming Liu,; Ying-Chin Chen,

1985-04-01

The operations of a complete set of optical AND, NAND, OR, and NOR gates and clocked optical S-R, D, J-K, and T flip-flops are demonstrated, based on direct polarization switching and polarization bistability, which we have recently observed in InGaAsP/InP semiconductor lasers. By operating the laser in the direct-polarizationswitchable mode, the output of the laser can be directly switched between the TM00 and TE00 modes with high extinction ratios by changing the injection-current level, and optical logic gates are constructed with two optoelectronic switches or photodetectors. In the polarization-bistable mode, the laser exhibits controllable hysteresis loops in the polarization-resolved powermore » versus current characteristics. When the laser is biased in the middle of the hysteresis loop, the light output can be switched between the two polarization states by injection of short electrical or optical pulses, and clocked optical flip-flops are constructed with a few optoelectronic switches and/or photodetectors. The 1 and 0 states of these devices are defined through polarization changes of the laser and direct complement functions are obtainable from the TE and TM output signals from the same laser. Switching of the polarization-bistable lasers with fast-rising current pulses has an instrument-limited mode-switching time on the order of 1 ns. With fast optoelectronic switches and/or fast photodetectors, the overall switching speed of the logic gates and flip-flops is limited by the polarizationbistable laser to <1 ns. We have demonstrated the operations of these devices using optical signals generated by semiconductor lasers. The proposed schemes of our devices are compatible with monolithic integration based on current fabrication technology and are applicable to other types of bistable semiconductor lasers.« less

Injection locking of a high power ultraviolet laser diode for laser cooling of ytterbium atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hosoya, Toshiyuki; Miranda, Martin; Inoue, Ryotaro

2015-07-15

We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power of 40 mW and another laser diode for amplifying the laser power up to 220 mW by injection locking. The systematic method for optimization of our injection locking can also be applied to high power light sources at any other wavelengths. Our system does not depend on complex nonlinear frequency-doubling and can be made compact, which will be useful for providing light sources formore » laser cooling experiments including transportable optical lattice clocks.« less

Progress in high-power continuous-wave quantum cascade lasers [Invited].

PubMed

Figueiredo, Pedro; Suttinger, Matthew; Go, Rowel; Tsvid, Eugene; Patel, C Kumar N; Lyakh, Arkadiy

2017-11-01

Multi-watt continuous-wave room temperature operation with efficiency exceeding 10% has been demonstrated for quantum cascade lasers essentially in the entire mid-wave and long-wave infrared spectral regions. Along with interband cascade lasers, these devices are the only room-temperature lasers that directly convert electrical power into mid- and long-infrared optical power. In this paper, we review the progress in high-power quantum cascade lasers made over the last 10 years. Specifically, an overview of the most important active region, waveguide, and thermal design techniques is presented, and various aspects of die packaging for high-power applications are discussed. Prospects of power scaling with lateral device dimensions for reaching optical power level in the range from 10 W to 20 W are also analyzed. Finally, coherent and spectral beam-combining techniques for very high-power infrared platforms are discussed.

Cryogenic ultra-high power infrared diode laser bars

NASA Astrophysics Data System (ADS)

Crump, Paul; Frevert, C.; Hösler, H.; Bugge, F.; Knigge, S.; Pittroff, W.; Erbert, G.; Tränkle, G.

2014-02-01

GaAs-based high power diode lasers are the most efficient source of optical energy, and are in wide use in industrial applications, either directly or as pump sources for other laser media. Increased output power per laser is required to enable new applications (increased optical power density) and to reduce cost (more output per component leads to lower cost in $/W). For example, laser bars in the 9xx nm wavelength range with the very highest power and efficiency are needed as pump sources for many high-energy-class solid-state laser systems. We here present latest performance progress using a novel design approach that leverages operation at temperatures below 0°C for increases in bar power and efficiency. We show experimentally that operation at -55°C increases conversion efficiency and suppresses thermal rollover, enabling peak quasi-continuous wave bar powers of Pout > 1.6 kW to be achieved (1.2 ms, 10 Hz), limited by the available current. The conversion efficiency at 1.6 kW is 53%. Following on from this demonstration work, the key open challenge is to develop designs that deliver higher efficiencies, targeting > 80% at 1.6 kW. We present an analysis of the limiting factors and show that low electrical resistance is crucial, meaning that long resonators and high fill factor are needed. We review also progress in epitaxial design developments that leverage low temperatures to enable both low resistance and high optical performance. Latest results will be presented, summarizing the impact on bar performance and options for further improvements to efficiency will also be reviewed.

Hybrid organic semiconductor lasers for bio-molecular sensing.

PubMed

Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

2014-01-01

Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

Development of on-line laser power monitoring system

NASA Astrophysics Data System (ADS)

Ding, Chien-Fang; Lee, Meng-Shiou; Li, Kuan-Ming

2016-03-01

Since the laser was invented, laser has been applied in many fields such as material processing, communication, measurement, biomedical engineering, defense industries and etc. Laser power is an important parameter in laser material processing, i.e. laser cutting, and laser drilling. However, the laser power is easily affected by the environment temperature, we tend to monitor the laser power status, ensuring there is an effective material processing. Besides, the response time of current laser power meters is too long, they cannot measure laser power accurately in a short time. To be more precisely, we can know the status of laser power and help us to achieve an effective material processing at the same time. To monitor the laser power, this study utilize a CMOS (Complementary metal-oxide-semiconductor) camera to develop an on-line laser power monitoring system. The CMOS camera captures images of incident laser beam after it is split and attenuated by beam splitter and neutral density filter. By comparing the average brightness of the beam spots and measurement results from laser power meter, laser power can be estimated. Under continuous measuring mode, the average measuring error is about 3%, and the response time is at least 3.6 second shorter than thermopile power meters; under trigger measuring mode which enables the CMOS camera to synchronize with intermittent laser output, the average measuring error is less than 3%, and the shortest response time is 20 millisecond.

A plasma microlens for ultrashort high power lasers

NASA Astrophysics Data System (ADS)

Katzir, Yiftach; Eisenmann, Shmuel; Ferber, Yair; Zigler, Arie; Hubbard, Richard F.

2009-07-01

We present a technique for generation of miniature plasma lens system that can be used for focusing and collimating a high intensity femtosecond laser pulse. The plasma lens was created by a nanosecond laser, which ablated a capillary entrance. The spatial configuration of the ablated plasma focused a high intensity femtosecond laser pulse. This configuration offers versatility in the plasma lens small f-number for extremely tight focusing of high power lasers with no damage threshold restrictions of regular optical components.

Passively mode-locked high power Nd:GdVO4 laser with direct in-band pumping at 912 nm

NASA Astrophysics Data System (ADS)

Nadimi, Mohammad; Waritanant, Tanant; Major, Arkady

2018-01-01

We report on the first semiconductor saturable absorber mirror mode-locked Nd:GdVO4 laser directly diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power at 1063 nm with the pulse width of 16 ps at the repetition rate of 85.2 MHz. The optical-to-optical efficiency and slope efficiency in the mode-locked regime were calculated to be 49.6% and 67.4% with respect to the absorbed pump power, respectively. Due to the low quantum defect pumping the output power was limited only by the available pump power.

Thermal lensing compensation optics for high power lasers

NASA Astrophysics Data System (ADS)

Scaggs, Michael; Haas, Gil

2011-03-01

Athermalization of focusing objectives is a common technique for optimizing imaging systems in the infrared where thermal effects are a major concern. The athermalization is generally done within the spectrum of interest and not generally applied to a single wavelength. The predominate glass used with high power infrared lasers in the near infrared of one micron, such as Nd:YAG and fiber lasers, is fused silica which has excellent thermal properties. All glasses, however, have a temperature coefficient of index of refraction (dn/dT) where as the glass heats up its index of refraction changes. Most glasses, fused silica included, have a positive dn/dT. A positive dn/dT will cause the focal length of the lens to decrease with a temperature rise. Many of the fluoride glasses, like CaF2, BaF2, LiF2, etc. have a negative dn/dT. By applying athermalization techniques of glass selection and optical design, the thermal lensing in a laser objective of a high power laser system can be substantially mitigated. We describe a passive method for minimizing thermal lensing of high power laser optics.

Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms

PubMed Central

Aviles-Espinosa, Rodrigo; Filippidis, George; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Santos, Susana I.C.O; Artigas, David; Loza-Alvarez, Pablo

2011-01-01

We present a portable ultrafast Semiconductor Disk Laser (SDL) (or vertical extended cavity surface emitting laser—VECSELs), to be used for nonlinear microscopy. The SDL is modelocked using a quantum-dot semiconductor saturable absorber mirror (SESAM), delivering an average output power of 287 mW, with 1.5 ps pulses at 500 MHz and a central wavelength of 965 nm. Specifically, despite the fact of having long pulses and high repetition rates, we demonstrate the potential of this laser for Two-Photon Excited Fluorescence (TPEF) imaging of in vivo Caenorhabditis elegans (C. elegans) expressing Green Fluorescent Protein (GFP) in a set of neuronal processes and cell bodies. Efficient TPEF imaging is achieved due to the fact that this wavelength matches the peak of the two-photon action cross section of this widely used fluorescent marker. The SDL extended versatility is shown by presenting Second Harmonic Generation images of pharynx, uterus, body wall muscles and its potential to be used to excite other different commercial dyes. Importantly this non-expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices. PMID:21483599

Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

NASA Astrophysics Data System (ADS)

Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

2018-01-01

We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

Industrial applications of high-average power high-peak power nanosecond pulse duration Nd:YAG lasers

NASA Astrophysics Data System (ADS)

Harrison, Paul M.; Ellwi, Samir

2009-02-01

Within the vast range of laser materials processing applications, every type of successful commercial laser has been driven by a major industrial process. For high average power, high peak power, nanosecond pulse duration Nd:YAG DPSS lasers, the enabling process is high speed surface engineering. This includes applications such as thin film patterning and selective coating removal in markets such as the flat panel displays (FPD), solar and automotive industries. Applications such as these tend to require working spots that have uniform intensity distribution using specific shapes and dimensions, so a range of innovative beam delivery systems have been developed that convert the gaussian beam shape produced by the laser into a range of rectangular and/or shaped spots, as required by demands of each project. In this paper the authors will discuss the key parameters of this type of laser and examine why they are important for high speed surface engineering projects, and how they affect the underlying laser-material interaction and the removal mechanism. Several case studies will be considered in the FPD and solar markets, exploring the close link between the application, the key laser characteristics and the beam delivery system that link these together.

Gain Coupling of Class A Semiconductor Lasers (Postprint)

DTIC Science & Technology

2010-09-01

Circuits (Wiley, 1995). 15. SimuLase Version 1.4.0.0 by Nonlinear Control Strategies, Inc. (2009). 16. A. Siegman , Lasers (University Science, 1986). 3062 OPTICS LETTERS / Vol. 35, No. 18 / September 15, 2010 3 ...AFRL-RY-WP-TP-2010-1250 GAIN COUPLING OF CLASS A SEMICONDUCTOR LASERS (POSTPRINT) Chris Hessenius, Mahmoud Fallahi, and Jerome Moloney...June 2010 4. TITLE AND SUBTITLE GAIN COUPLING OF CLASS A SEMICONDUCTOR LASERS (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c

Widely tunable semiconductor lasers with three interferometric arms.

PubMed

Su, Guan-Lin; Wu, Ming C

2017-09-04

We present a comprehensive study for a new three-branch widely tunable semiconductor laser based on a self-imaging, lossless multi-mode interference (MMI) coupler. We have developed a general theoretical framework that is applicable to all types of interferometric lasers. Our analysis showed that the three-branch laser offers high side-mode suppression ratios (SMSRs) while maintaining a wide tuning range and a low threshold modal gain of the lasing mode. We also present the design rules for tuning over the dense-wavelength division multiplexing grid over the C-band.

High-power highly stable passively Q-switched fiber laser based on monolayer graphene

NASA Astrophysics Data System (ADS)

Wu, Hanshuo; Song, Jiaxin; Wu, Jian; Xu, Jiangming; Xiao, Hu; Leng, Jinyong; Zhou, Pu

2018-03-01

We demonstrate a monolayer graphene-based passively Q-switched fiber laser with three-stage amplifiers that can deliver an average power of over 80 W at 1064 nm. The highest average power achieved is 84.1 W, with a pulse energy of 1.67 mJ. To the best of our knowledge this is the first report of a high-power passively Q-switched fiber laser in the 1 µm range. More importantly, the Q-switched fiber laser operated stably during a week of tests for a few hours per day, which proves the stability and practical application potential of graphene in high-power pulsed fiber lasers.

Gold-reflector-based semiconductor saturable absorber mirror for femtosecond mode-locked Cr4+:YAG lasers

NASA Astrophysics Data System (ADS)

Zhang, Z.; Nakagawa, T.; Torizuka, K.; Sugaya, T.; Kobayashi, K.

We developed a gold reflector based semiconductor saturable absorber mirror that has a sufficiently high reflectivity and a broad bandwidth and has been used to initiate the mode locking in a Cr4+:YAG laser. The laser achieved a similar efficiency to the lasers with Bragg-reflector-based semiconductor saturable absorber mirrors, but delivered a much broader spectrum and a shorter pulse.

Highly Efficient Nd:yag Lasers for Free-space Optical Communications

NASA Technical Reports Server (NTRS)

Sipes, D. L., Jr.

1985-01-01

A highly efficient Nd:YAG laser end-pumped by semiconductor lasers as a possible free-space optical communications source is discussed. Because this concept affords high pumping densities, a long absorption length, and excellent mode-matching characteristics, it is estimated that electrical-to-optical efficiencies greater than 5% could be achieved. Several engineering aspects such as resonator size and configuration, pump collecting optics, and thermal effects are also discussed. Finally, possible methods for combining laser-diode pumps to achieve higher output powers are illustrated.

High power, high signal-to-noise ratio single-frequency 1μm Brillouin all-fiber laser

NASA Astrophysics Data System (ADS)

Wang, Jing; Hou, Yubin; Zhang, Qian; Jin, Dongchen; Sun, Ruoyu; Shi, Hongxing; Liu, Jiang; Wang, Pu

2016-03-01

We demonstrate a high-power, high signal-to-noise ratio single-frequency 1 μm Brillouin all-fiber laser with high slope efficiency. The Brillouin laser system consists of a high-power single-frequency fiber laser and a single-pass Brillouin ring cavity. The high-power single-frequency fiber laser is one-stage master-oscillator power amplifier with the maximum output power of 10.33 W, the signal-to-noise ratio of 50 dB and the slope efficiency of 46%. The Brillouin fiber laser is pumped by the amplified laser with a linewidth of 33 kHz and an output power of 2.61 W limited by the damage threshold of the optical isolator. By optimizing the length of the Brillouin ring cavity to 10 m, stable singlefrequency Brillouin fiber laser is obtained with 3 kHz linewidth owing to the linewidth narrowing effect. At the launched pump power of 2.15 W, the Brillouin fiber laser generates maximum output power of 1.4 W with a slope efficiency of 79% and the optical signal-to-noise ratio of 77 dB.

High-power picosecond laser with 400W average power for large scale applications

NASA Astrophysics Data System (ADS)

Du, Keming; Brüning, Stephan; Gillner, Arnold

2012-03-01

Laser processing is generally known for low thermal influence, precise energy processing and the possibility to ablate every type of material independent on hardness and vaporisation temperature. The use of ultra-short pulsed lasers offers new possibilities in the manufacturing of high end products with extra high processing qualities. For achieving a sufficient and economical processing speed, high average power is needed. To scale the power for industrial uses the picosecond laser system has been developed, which consists of a seeder, a preamplifier and an end amplifier. With the oscillator/amplifier system more than 400W average power and maximum pulse energy 1mJ was obtained. For study of high speed processing of large embossing metal roller two different ps laser systems have been integrated into a cylinder engraving machine. One of the ps lasers has an average power of 80W while the other has 300W. With this high power ps laser fluencies of up to 30 J/cm2 at pulse repetition rates in the multi MHz range have been achieved. Different materials (Cu, Ni, Al, steel) have been explored for parameters like ablation rate per pulse, ablation geometry, surface roughness, influence of pulse overlap and number of loops. An enhanced ablation quality and an effective ablation rate of 4mm3/min have been achieved by using different scanning systems and an optimized processing strategy. The max. achieved volume rate is 20mm3/min.

High power, electrically tunable quantum cascade lasers

NASA Astrophysics Data System (ADS)

Slivken, Steven; Razeghi, Manijeh

2016-02-01

Mid-infrared laser sources (3-14 μm wavelengths) which have wide spectral coverage and high output power are attractive for many applications. This spectral range contains unique absorption fingerprints of most molecules, including toxins, explosives, and nerve agents. Infrared spectroscopy can also be used to detect important biomarkers, which can be used for medical diagnostics by means of breath analysis. The challenge is to produce a broadband midinfrared source which is small, lightweight, robust, and inexpensive. We are currently investigating monolithic solutions using quantum cascade lasers. A wide gain bandwidth is not sufficient to make an ideal spectroscopy source. Single mode output with rapid tuning is desirable. For dynamic wavelength selection, our group is developing multi-section laser geometries with wide electrical tuning (hundreds of cm-1). These devices are roughly the same size as a traditional quantum cascade lasers, but tuning is accomplished without any external optical components. When combined with suitable amplifiers, these lasers are capable of multi-Watt single mode output powers. This manuscript will describe our current research efforts and the potential for high performance, broadband electrical tuning with the quantum cascade laser.

Improving the Fabrication of Semiconductor Bragg Lasers

NASA Astrophysics Data System (ADS)

Chen, Eric Ping Chun

Fabrication process developments for Bragg reflection lasers have been optimized in this thesis using resources available to the group. New e-beam lithography and oxide etch recipes have been developed to minimize sidewall roughness and residues. E-beam evaporated metal contacts for semiconductor diode laser utilizing oblique angle deposition have also been developed in-house for the first time. Furthermore, improvement in micro-loading effect of DFB laser etching has been demonstrated where the ratio of tapered portion of the sidewall to total etch depth is reduced by half, from 33% to 15%. Electrical, optical and thermal performance of the fabricated lasers are characterized. Comparing the results to previous generation lasers, average dynamic resistance is decreased drastically from 14 Ohms to 7 Ohms and threshold current density also reduced from 1705A/cm2 to 1383A/ cm2. Improvement in laser performance is result of reduced loss from optimized fabrication processes. BRL bow-tie tapered lasers is then fabricated for the first time and output power of 18mW at 200mA input is measured. Benefiting from the increased effective area and better carrier utilization, reduction in threshold current density from 1383A/cm 2 to 712A/cm2 is observed.

Stimulated Brillouin scattering of laser in semiconductor plasma embedded with nano-sized grains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Giriraj, E-mail: grsharma@gmail.com; Dad, R. C.; Ghosh, S.

2015-07-31

A high power laser propagating through semiconductor plasma undergoes Stimulated Brillouin scattering (SBS) from the electrostrictively generated acoustic perturbations. We have considered that nano-sized grains (NSGs) ions are embedded in semiconductor plasma by means of ion implantation. The NSGs are bombarded by the surrounding plasma particles and collect electrons. By considering a negative charge on the NSGs, we present an analytically study on the effects of NSGs on threshold field for the onset of SBS and Brillouin gain of generated Brillouin scattered mode. It is found that as the charge on the NSGs builds up, the Brillouin gain is significantlymore » raised and the threshold pump field for the onset of SBS process is lowered.« less

Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

2018-03-01

In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

Semiconductor optoelectronic devices for free-space optical communications

NASA Technical Reports Server (NTRS)

Katz, J.

1983-01-01

The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

High-Power Fiber Lasers Using Photonic Band Gap Materials

NASA Technical Reports Server (NTRS)

DiDomenico, Leo; Dowling, Jonathan

2005-01-01

High-power fiber lasers (HPFLs) would be made from photonic band gap (PBG) materials, according to the proposal. Such lasers would be scalable in the sense that a large number of fiber lasers could be arranged in an array or bundle and then operated in phase-locked condition to generate a superposition and highly directed high-power laser beam. It has been estimated that an average power level as high as 1,000 W per fiber could be achieved in such an array. Examples of potential applications for the proposed single-fiber lasers include welding and laser surgery. Additionally, the bundled fibers have applications in beaming power through free space for autonomous vehicles, laser weapons, free-space communications, and inducing photochemical reactions in large-scale industrial processes. The proposal has been inspired in part by recent improvements in the capabilities of single-mode fiber amplifiers and lasers to produce continuous high-power radiation. In particular, it has been found that the average output power of a single strand of a fiber laser can be increased by suitably changing the doping profile of active ions in its gain medium to optimize the spatial overlap of the electromagnetic field with the distribution of active ions. Such optimization minimizes pump power losses and increases the gain in the fiber laser system. The proposal would expand the basic concept of this type of optimization to incorporate exploitation of the properties (including, in some cases, nonlinearities) of PBG materials to obtain power levels and efficiencies higher than are now possible. Another element of the proposal is to enable pumping by concentrated sunlight. Somewhat more specifically, the proposal calls for exploitation of the properties of PBG materials to overcome a number of stubborn adverse phenomena that have impeded prior efforts to perfect HPFLs. The most relevant of those phenomena is amplified spontaneous emission (ASE), which causes saturation of gain and power

2.1 μm high-power laser diode beam combining(Conference Presentation)

NASA Astrophysics Data System (ADS)

Berrou, Antoine P. C.; Elder, Ian F.; Lamb, Robert A.; Esser, M. J. Daniel

2016-10-01

Laser power and brightness scaling, in "eye safe" atmospheric transmission windows, is driving laser system research and development. High power lasers with good beam quality, at wavelength around 2.1 µm, are necessary for optical countermeasure applications. For such applications, focusing on efficiency and compactness of the system is mandatory. In order to cope with these requirements, one must consider the use of laser diodes which emit directly in the desired spectral region. The challenge for these diodes is to maintain a good beam quality factor as the output power increases. 2 µm diodes with excellent beam quality in both axes are available with output powers of 100 mW. Therefore, in order to reach multi-watt of average output power, broad-area single emitters and beam combining becomes relevant. Different solutions have been implemented in the 1.9 to 2 µm wavelength range, one of which is to stack multiple emitter bars reaching more than one hundred watt, while another is a fibre coupled diode module. The beam propagation factor of these systems is too high for long atmospheric propagation applications. Here we describe preliminary results on non-coherent beam combining of 2.1 µm high power Fabry-Perot GaSb laser diodes supplied by Brolis Semiconductors Ltd. First we evaluated single mode diodes (143 mW) with good beam quality (M2 < 1.5 for slow axis and < 1.1 for fast axis). Then we characterized broad-area single emitter diodes (808 mW) with an electrical-to-optical efficiency of 19 %. The emitter width was 90 µm with a cavity length of 1.5 mm. In our experiments we found that the slow axis multimode output beam consisted of two symmetric lobes with a total full width at half maximum (FWHM) divergence angle of 25 degrees, corresponding to a calculated beam quality factor of M2 = 25. The fast axis divergence was specified to be 44 degrees, with an expected beam quality factor close to the diffraction limit, which informed our selection of collimation

High-power diode lasers for optical communications applications

NASA Technical Reports Server (NTRS)

Carlin, D. B.; Goldstein, B.; Channin, D. J.

1985-01-01

High-power, single-mode, double-heterojunction AlGaAs diode lasers are being developed to meet source requirements for both fiber optic local area network and free space communications systems. An individual device, based on the channeled-substrate-planar (CSP) structure, has yielded single spatial and longitudinal mode outputs of up to 90 mW CW, and has maintained a single spatial mode to 150 mW CW. Phase-locked arrays of closely spaced index-guided lasers have been designed and fabricated with the aim of multiplying the outputs of the individual devices to even higher power levels in a stable, single-lobe, anastigmatic beam. The optical modes of the lasers in such arrays can couple together in such a way that they appear to be emanating from a single source, and can therefore be efficiently coupled into optical communications systems. This paper will review the state of high-power laser technology and discuss the communication system implications of these devices.

Safety approaches for high power modular laser operation

NASA Astrophysics Data System (ADS)

Handren, R. T.

1993-03-01

Approximately 20 years ago, a program was initiated at the Lawrence Livermore National Laboratory (LLNL) to study the feasibility of using lasers to separate isotopes of uranium and other materials. Of particular interest was the development of a uranium enrichment method for the production of commercial nuclear power reactor fuel to replace current more expensive methods. The Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) Program progressed to the point where a plant-scale facility to demonstrate commercial feasibility was built and is being tested. The U-AVLIS Program uses copper vapor lasers which pump frequency selective dye lasers to photoionize uranium vapor produced by an electron beam. The selectively ionized isotopes are electrostatically collected. The copper lasers are arranged in oscillator/amplifier chains. The current configuration consists of 12 chains, each with a nominal output of 800 W for a system output in excess of 9 kW. The system requirements are for continuous operation (24 h a day, 7 days a week) and high availability. To meet these requirements, the lasers are designed in a modular form allowing for rapid change-out of the lasers requiring maintenance. Since beginning operation in early 1985, the copper lasers have accumulated over 2 million unit hours at a greater than 90% availability. The dye laser system provides approximately 2.5 kW average power in the visible wavelength range. This large-scale laser system has many safety considerations, including high-power laser beams, high voltage, and large quantities (approximately 3000 gal) of ethanol dye solutions. The Laboratory's safety policy requires that safety controls be designed into any process, equipment, or apparatus in the form of engineering controls. Administrative controls further reduce the risk to an acceptable level. Selected examples of engineering and administrative controls currently being used in the U-AVLIS Program are described.

High-efficiency high-brightness diode lasers at 1470 nm/1550 nm for medical and defense applications

NASA Astrophysics Data System (ADS)

Gallup, Kendra; Ungar, Jeff; Vaissie, Laurent; Lammert, Rob; Hu, Wentao

2012-03-01

Diode lasers in the 1400 nm to 1600 nm regime are used in a variety of applications including pumping Er:YAG lasers, range finding, materials processing, aesthetic medical treatments and surgery. In addition to the compact size, efficiency, and low cost advantages of traditional diode lasers, high power semiconductor lasers in the eye-safe regime are becoming widely used in an effort to minimize the unintended impact of potentially hazardous scattered optical radiation from the laser source, the optical delivery system, or the target itself. In this article we describe the performance of high efficiency high brightness InP laser bars at 1470nm and 1550nm developed at QPC Lasers for applications ranging from surgery to rangefinding.

Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

2005-01-01

Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

Industrial integration of high coherence tunable single frequency semiconductor lasers based on VECSEL technology for scientific instrumentation in NIR and MIR

NASA Astrophysics Data System (ADS)

Lecocq, Vincent; Chomet, Baptiste; Ferrières, Laurence; Myara, Mikhaël.; Beaudoin, Grégoire; Sagnes, Isabelle; Cerutti, Laurent; Denet, Stéphane; Garnache, Arnaud

2017-02-01

Laser technology is finding applications in areas such as high resolution spectroscopy, radar-lidar, velocimetry, or atomic clock where highly coherent tunable high power light sources are required. The Vertical External Cavity Surface Emitting Laser (VECSEL) technology [1] has been identified for years as a good candidate to reach high power, high coherence and broad tunability while covering a wide emission wavelength range exploiting III-V semiconductor technologies. Offering such performances in the Near- and Middle-IR range, GaAs- and Sb-based VECSEL technologies seem to be a well suited path to meet the required specifications of demanding applications. Built up in this field, our expertise allows the realization of compact and low power consumption marketable products, with performances that do not exist on the market today in the 0.8-1.1 μm and 2-2.5 μm spectral range. Here we demonstrate highly coherent broadly tunable single frequency laser micro-chip, intracavity element free, based on a patented VECSEL technology, integrated into a compact module with driving electronics. VECSEL devices emitting in the Near and Middle-IR developed in the frame of this work [2] exhibit exciting features compared to diode-pumped solid-state lasers and DFB diode lasers; they combine high power (>100mW) high temporal coherence together with a low divergence diffraction limited TEM00 beam. They exhibit a class-A dynamics with a Relative Intensity Noise as low as -140dB/Hz and at shot noise level reached above 200MHz RF frequency (up to 160GHz), a free running narrow linewidth at sub MHz level (fundamental limit at Hz level) with high spectral purity (SMSR >55dB), a linear polarization (>50dB suppression ratio), and broadband continuous tunability greater than 400GHz (< 30V piezo voltage, 6kHz cut off frequency) with total tunability up to 3THz. Those performances can all be reached thanks to the high finesse cavity of VECSEL technology, associated to ideal homogeneous QW

Direct solar pumping of semiconductor lasers: A feasibility study

NASA Technical Reports Server (NTRS)

Anderson, Neal G.

1991-01-01

The primary goals of the feasibility study are the following: (1) to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space directly focused sunlight; and (2) to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or battery electrically pumping a current injection laser. With external modulation, such lasers may prove to be efficient sources for intersatellite communications. We proposed to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation for operation at low pump intensities. This report outlines our progress toward these goals. Discussion of several technical details are left to the attached summary abstract.

Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D. A.; Shashkin, I. S.; Bobretsova, Yu. K.

2016-10-15

Pulse-pumped MOVPE-fabricated (metal-organic vapor-phase epitaxy) semiconductor lasers emitting in the spectral ranges 1000–1100 and 1400–1600 nm at temperatures of 110–120 K are studied. It is found that cooling the lasers for both spectral ranges to low temperature results in their light–current curves approaching linearity, and an optical power of, respectively, 110 and 20 W can be attained. The low-temperature effect is reduced for lasers emitting in the spectral range 1400–1600 nm. The processes affecting a rise in the internal optical loss in semiconductor lasers are considered. It is shown that an increase in the carrier concentration in the waveguide ofmore » a laser structure greatly depends on temperature and is determined by the noninstantaneous capture (capture rate) of carriers from the waveguide into the active region. It is demonstrated that, upon lowering the temperature to 115K, the concentration of electrons and holes in the waveguide becomes lower, which leads to a significant decrease in the internal optical loss and to an increase in the output optical power of the semiconductor laser.« less

Crystal fibers for high power lasers

NASA Astrophysics Data System (ADS)

Kim, W.; Florea, C.; Gibson, D.; Peele, J.; Askins, C.; Shaw, B.; Bowman, S.; O'Connor, S.; Bayya, S.; Aggarwal, I.; Sanghera, J. S.

2013-02-01

In this paper, we present our recent progress in developing single crystal fibers for high power single frequency fiber lasers. The optical, spectral and morphological properties as well as the loss and gain measured from these crystal fibers drawn by Laser Heated Pedestal Growth (LHPG) system are also discussed. Results on application of various cladding materials on the crystal core and the methods of fiber end-face polishing are also presented.

High-Power Single-Mode 2.65-micron InGaAsSb/AlInGaAsSb Diode Lasers

NASA Technical Reports Server (NTRS)

Frez, Clifford F.; Briggs, Ryan M.; Forouhar, Siamak; Borgentun, Carl E.; Gupta, James

2013-01-01

InGaAsSb multi-quantum well structures. The device fabrication utilizes etched index-coupled gratings in the top AlGaAsSb cladding of the laser chip along the ridge waveguide, whereas commercial lasers that emit close to this wavelength include loss-coupled metal gratings that limit the output power of the laser. Semiconductor-laser-based spectrometers can be used to replace gas sensors currently used in industry and government. With the availability of high-power laser sources at mid-infrared wavelengths, sensors can target strong fundamental gas absorption lines to maximize instrument sensitivity.

High-power beam combining: a step to a future laser weapon system

NASA Astrophysics Data System (ADS)

Protz, Rudolf; Zoz, Jürgen; Geidek, Franz; Dietrich, Stephan; Fall, Michael

2012-11-01

Due to the enormous progress in the field of high-power fiber lasers during the last years commercial industrial fiber lasers are now available, which deliver a near-diffraction limited beam with power levels up to10kW. For the realization of a future laser weapon system, which can be used for Counter-RAM or similar air defence applications, a laser source with a beam power at the level of 100kW or more is required. At MBDA Germany the concept for a high-energy laser weapon system is investigated, which is based on such existing industrial laser sources as mentioned before. A number of individual high-power fiber laser beams are combined together, using one common beam director telescope. By this "geometric" beam coupling scheme, sufficient laser beam power for an operational laser weapon system can be achieved. The individual beams from the different lasers are steered by servo-loops, using fast tip-tilt mirrors. This principle enables the concentration of the total laser beam power at the common focal point on a distant target, also allowing fine tracking of target movements and first order compensation of turbulence effects on laser beam propagation. The proposed beam combination concept was demonstrated using several experimental set-ups. Different experiments were performed, to investigate laser beam target interaction and target fine tracking also at large distances. Content and results of these investigations are reported. An example for the lay-out of an Air Defence High Energy Laser Weapon (ADHELW ) is given. It can be concluded, that geometric high-power beam combining is an important step for the realization of a laser weapon system in the near future.

A developmental perspective on high power laser facility technology for ICF

NASA Astrophysics Data System (ADS)

Zhu, Jianqiang; Sun, Mingying; Liu, Chong; Guo, Yajing; Yang, Lin; Yang, Pengqian; Zhang, Yanli; Wang, Bingyan; Liu, Cheng; Li, Yangshuai; Ren, Zhiyuan; Liu, Dean; Liu, Zhigang; Jiao, Zhaoyang; Ren, Lei; Zhang, Guowen; Fan, Quantang; Feng, Tao; Lin, Zunqi

2018-02-01

The latest progress on high power laser facilities in NLHPLP was reported. Based on a high power laser prototype, damage behavior of 3ω optics was experimentally tested, and the key influencing factors contributed to laser-induced damage in optics were deeply analyzed. The latest experimental results of advanced precision measurement for optical quality applied in the high power laser facility were introduced. At last, based on the accumulated works of 3ω elements damage behavior status in our laboratory, beam expanding scheme was presented to increase the total maximum output 3ω energy properly and decrease the laser induced damage risking of ω optics simultaneously.

Effects of High Power Lasers, Number 7, November 1975 - Jun 1976

DTIC Science & Technology

1976-09-28

June 1976. Articles are grouped by laser interaction with metals, dielectrics, semiconductors, miscellaneous targets, and laser-plasma interaction. A first- author index and an index of source abbreviations are appended.

High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

NASA Astrophysics Data System (ADS)

Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

2018-01-01

The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

Trends in high power laser applications in civil engineering

NASA Astrophysics Data System (ADS)

Wignarajah, Sivakumaran; Sugimoto, Kenji; Nagai, Kaori

2005-03-01

This paper reviews the research and development efforts made on the use of lasers for material processing in the civil engineering industry. Initial investigations regarding the possibility of using lasers in civil engineering were made in the 1960s and '70s, the target being rock excavation. At that time however, the laser powers available were too small for any practical application utilization. In the 1980's, the technology of laser surface cleaning of historically important structures was developed in Europe. In the early 1990s, techniques of laser surface modification, including glazing and coloring of concrete, roughening of granite stones, carbonization of wood were pursued, mainly in Japan. In the latter part of the decade, techniques of laser decontamination of concrete surfaces in nuclear facilities were developed in many countries, and field tests were caried out in Japan. The rapid advances in development of diode lasers and YAG lasers with high power outputs and efficiencies since the late 1990's have led to a revival of worldwide interest in the use of lasers for material processing in civil engineering. The authors believe that, in the next 10 years or so, the advent of compact high power lasers is likely to lead to increased use of lasers of material processing in the field of civil engineering.

High power multiple wavelength diode laser stack for DPSSL application without temperature control

NASA Astrophysics Data System (ADS)

Hou, Dong; Yin, Xia; Wang, Jingwei; Chen, Shi; Zhan, Yun; Li, Xiaoning; Fan, Yingmin; Liu, Xingsheng

2018-02-01

High power diode laser stack is widely used in pumping solid-state laser for years. Normally an integrated temperature control module is required for stabilizing the output power of solid-state laser, as the output power of the solid-state laser highly depends on the emission wavelength and the wavelength shift of diode lasers according to the temperature changes. However the temperature control module is inconvenient for this application, due to its large dimension, high electric power consumption and extra adding a complicated controlling system. Furthermore, it takes dozens of seconds to stabilize the output power when the laser system is turned on. In this work, a compact hard soldered high power conduction cooled diode laser stack with multiple wavelengths is developed for stabilizing the output power of solid-state laser in a certain temperature range. The stack consists of 5 laser bars with the pitch of 0.43mm. The peak output power of each bar in the diode laser stack reaches as much as 557W and the combined lasing wavelength spectrum profile spans 15nm. The solidstate laser, structured with multiple wavelength diode laser stacks, allows the ambient temperature change of 65°C without suddenly degrading the optical performance.

Direct solar pumping of semiconductor lasers: A feasibility study

NASA Technical Reports Server (NTRS)

Anderson, Neal G.

1992-01-01

This report describes results of NASA Grant NAG-1-1148, entitled Direct Solar Pumping of Semiconductor Lasers: A Feasibility Study. The goals of this study were to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space with directly focused sunlight and to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or storage battery electrically pumping a current injection laser. With external modulation, such lasers could perhaps be efficient sources for intersatellite communications. We proposed specifically to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation at low pump intensities. These tasks have been accomplished, as described in this report of our completed project. The report is organized as follows: Some general considerations relevant to the solar-pumped semiconductor laser problem are discussed in Section 2, and the types of structures chosen for specific investigation are described. The details of the laser model we developed for this work are then outlined in Section 3. In Section 4, results of our study are presented, including designs for optimum lattice-matched and strained-layer solar-pumped quantum-well lasers and threshold pumping estimates for these structures. It was hoped at the outset of this work that structures could be identified which could be expected to operate continuously at solar photoexcitation intensities of several thousand suns, and this indeed turned out to be the case as described in this section. Our project is

Laser damage mechanisms in conductive widegap semiconductor films

DOE PAGES

Yoo, Jae-Hyuck; Menor, Marlon G.; Adams, John J.; ...

2016-07-25

Here, laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN,more » carbon complexes were proposed as potential damage precursors or markers.« less

Optimizing the noise characteristics of high-power fiber laser systems

NASA Astrophysics Data System (ADS)

Jauregui, Cesar; Müller, Michael; Kienel, Marco; Emaury, Florian; Saraceno, Clara J.; Limpert, Jens; Keller, Ursula; Tünnermann, Andreas

2017-02-01

The noise characteristics of high-power fiber lasers, unlike those of other solid-state lasers such as thin-disks, have not been systematically studied up to now. However, novel applications for high-power fiber laser systems, such as attosecond pulse generation, put stringent limits to the maximum noise level of these sources. Therefore, in order to address these applications, a detailed knowledge and understanding of the characteristics of noise and its behavior in a fiber laser system is required. In this work we have carried out a systematic study of the propagation of the relative intensity noise (RIN) along the amplification chain of a state-of-the-art high-power fiber laser system. The most striking feature of these measurements is that the RIN level is progressively attenuated after each amplification stage. In order to understand this unexpected behavior, we have simulated the transfer function of the RIN in a fiber amplification stage ( 80μm core) as a function of the seed power and the frequency. Our simulation model shows that this damping of the amplitude noise is related to saturation. Additionally, we show, for the first time to the best of our knowledge, that the fiber design (e.g. core size, glass composition, doping geometry) can be modified to optimize the noise characteristics of high-power fiber laser systems.

Effect of different laser irradiation on the dysentery bacilli

NASA Astrophysics Data System (ADS)

Ou, Lin; Chen, Rong; Chen, Yanjiao; Li, Depin; Wen, Caixia

1998-08-01

The S. flexnesi, which have high drug-resistance especially in Cm, Sm, Tc, SD, were irradiated by Ar+ laser at 488 nm and semiconductor laser at 808 nm. The experiment results have shown that both Ar+ laser and semiconductor laser with power density of 1.7 w/cm2 and irradiation dose of 2000 J/cm2 can conduce to the bacterial lethality and increase the mutation rates of the bacterial drug-sensitivity, and 'Colony Count' method have the superiority over the 'Inhibacteria Ring' method. At the mean time it further indicate that the high power semiconductor laser would play an important role in the sciences of laser biological medicine. But the effect of the near infrared semiconductor laser is far lower than that of Ar+ laser of shorter wavelength at the same irradiation dose. It is clear that the output and irradiation dose of near infrared semiconductor laser shall be increased in order to get the same rates of the bacterial lethality and the drug-sensitivity mutation as Ar+ laser's.

Remotely-interrogated high data rate free space laser communications link

DOEpatents

Ruggiero, Anthony J [Livermore, CA

2007-05-29

A system and method of remotely extracting information from a communications station by interrogation with a low power beam. Nonlinear phase conjugation of the low power beam results in a high power encoded return beam that automatically tracks the input beam and is corrected for atmospheric distortion. Intracavity nondegenerate four wave mixing is used in a broad area semiconductor laser in the communications station to produce the return beam.

High power and single mode quantum cascade lasers.

PubMed

Bismuto, Alfredo; Bidaux, Yves; Blaser, Stéphane; Terazzi, Romain; Gresch, Tobias; Rochat, Michel; Muller, Antoine; Bonzon, Christopher; Faist, Jerome

2016-05-16

We present a single mode quantum cascade laser with nearly 1 W optical power. A buried distributed feedback reflector is used on the back section for wavelength selection. The laser is 6 mm long, 3.5 μm wide, mounted episide-up and the laser facets are left uncoated. Laser emission is centered at 4.68 μm. Single-mode operation with a side mode suppression ratio of more than 30 dB is obtained in whole range of operation. Farfield measurements prove a symmetric, single transverse-mode emission in TM00-mode with typical divergences of 41° and 33° in the vertical and horizontal direction respectively. This work shows the potential for simple fabrication of high power lasers compatible with standard DFB processing.

All solid-state high power visible laser

NASA Technical Reports Server (NTRS)

Grossman, William M.

1993-01-01

The overall objective of this Phase 2 effort was to develop and deliver to NASA a high repetition rate laser-diode-pumped solid-state pulsed laser system with output in the green portion of the spectrum. The laser is for use in data communications, and high efficiency, short pulses, and low timing jitter are important features. A short-pulse 1 micron laser oscillator, a new multi-pass amplifier to boost the infrared power, and a frequency doubler to take the amplified infrared pulsed laser light into the green. This produced 1.5 W of light in the visible at a pulse repetition rate of 20 kHz in the laboratory. The pulses have a full-width at half maximum of near 1 ns. The results of this program are being commercialized.

Finite element analysis of space debris removal by high-power lasers

NASA Astrophysics Data System (ADS)

Xue, Li; Jiang, Guanlei; Yu, Shuang; Li, Ming

2015-08-01

With the development of space station technologies, irradiation of space debris by space-based high-power lasers, can locally generate high-temperature plasmas and micro momentum, which may achieve the removal of debris through tracking down. Considered typical square-shaped space debris of material Ti with 5cm×5cm size, whose thermal conductivity, density, specific heat capacity and emissivity are 7.62W/(m·°C), 4500kg/m3, 0.52J/(kg·°C) and 0.3,respectively, based on the finite element analysis of ANSYS, each irradiation of space debris by high-power lasers with power density 106W/m2 and weapons-grade lasers with power density 3000W/m2 are simulated under space environment, and the temperature curves due to laser thermal irradiation are obtained and compared. Results show only 2s is needed for high-power lasers to make the debris temperature reach to about 10000K, which is the threshold temperature for plasmas-state conversion. While for weapons-grade lasers, it is 13min needed. Using two line elements (TLE), and combined with the coordinate transformation from celestial coordinate system to site coordinate system, the visible period of space debris is calculated as 5-10min. That is, in order to remove space debris by laser plasmas, the laser power density should be further improved. The article provides an intuitive and visual feasibility analysis method of space debris removal, and the debris material and shape, laser power density and spot characteristics are adjustable. This finite element analysis method is low-cost, repeatable and adaptable, which has an engineering-prospective applications.

Method and apparatus for delivering high power laser energy over long distances

DOEpatents

Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O; Koblick, Yeshaya; Moxley, Joel F

2015-04-07

Systems, devices and methods for the transmission and delivery of high power laser energy deep into the earth and for the suppression of associated nonlinear phenomena. Systems, devices and methods for the laser drilling of a borehole in the earth. These systems can deliver high power laser energy down a deep borehole, while maintaining the high power to advance such boreholes deep into the earth and at highly efficient advancement rates.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: High-frequency impedance and spontaneous carrier lifetime in narrow-stripe semiconductor injection lasers

NASA Astrophysics Data System (ADS)

Hoernlein, W.

1988-11-01

Measurements were made of the complex reflection coefficient of hf (10-400 MHz) signals from semiconductor injection lasers supplied with a direct bias current ranging from several milliamperes up to the threshold value or higher. The hf impedance was calculated. The parameters of the equivalent electrical circuit made it possible to predict the modulation characteristics. The impedance corresponding to currents below the lasing threshold was used to find the differential carrier lifetime from the RC constant of the p-n junction of a laser diode. A description of the apparatus is supplemented by an account of the method used in calculation of the electrical parameters and carrier lifetimes. The first results obtained using this apparatus and method are reported.

Apertureless scanning microscope probe as a detector of semiconductor laser emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dunaevskiy, Mikhail, E-mail: Mike.Dunaeffsky@mail.ioffe.ru; National Research University of Information Technologies, Mechanics and Optics; Dontsov, Anton

2015-04-27

An operating semiconductor laser has been studied using a scanning probe microscope. A shift of the resonance frequency of probe that is due to its heating by laser radiation has been analyzed. The observed shift is proportional to the absorbed radiation and can be used to measure the laser near field or its output power. A periodical dependence of the measured signal has been observed as a function of distance between the probe and the surface of the laser due to the interference of the outgoing and cantilever-reflected waves. Due to the multiple reflections resulting in the interference, the lightmore » absorption by the probe cantilever is greatly enhanced compared with a single pass case. Interaction of infrared emission of a diode laser with different probes has been studied.« less

Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

2004-01-01

Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

NASA Astrophysics Data System (ADS)

Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-07-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

Beam shaping in high-power laser systems with using refractive beam shapers

NASA Astrophysics Data System (ADS)

Laskin, Alexander; Laskin, Vadim

2012-06-01

Beam Shaping of the spatial (transverse) profile of laser beams is highly desirable by building optical systems of high-power lasers as well in various applications with these lasers. Pumping of the crystals of Ti:Sapphire lasers by the laser radiation with uniform (flattop) intensity profile improves performance of these ultrashort pulse high-power lasers in terms of achievable efficiency, peak-power and stability, output beam profile. Specifications of the solid-state lasers built according to MOPA configuration can be also improved when radiation of the master oscillator is homogenized and then is amplified by the power amplifier. Features of building these high power lasers require that a beam shaping solution should be capable to work with single mode and multimode beams, provide flattop and super-Gauss intensity distributions, the consistency and divergence of a beam after the intensity re-distribution should be conserved and low absorption provided. These specific conditions are perfectly fulfilled by the refractive field mapping beam shapers due to their unique features: almost lossless intensity profile transformation, low output divergence, high transmittance and flatness of output beam profile, extended depth of field, adaptability to real intensity profiles of TEM00 and multimode laser sources. Combining of the refractive field mapping beam shapers with other optical components, like beam-expanders, relay imaging lenses, anamorphic optics makes it possible to generate the laser spots of necessary shape, size and intensity distribution. There are plenty of applications of high-power lasers where beam shaping bring benefits: irradiating photocathode of Free Electron Lasers (FEL), material ablation, micromachining, annealing in display making techniques, cladding, heat treating and others. This paper will describe some design basics of refractive beam shapers of the field mapping type, with emphasis on the features important for building and applications

Wavelength dependency in high power laser cutting and welding

NASA Astrophysics Data System (ADS)

Havrilla, David; Ziermann, Stephan; Holzer, Marco

2012-03-01

Laser cutting and welding have been around for more than 30 years. Within those three decades there has never been a greater variety of high power laser types and wavelengths to choose from than there is today. There are many considerations when choosing the right laser for any given application - capital investment, cost of ownership, footprint, serviceability, along with a myriad of other commercial & economic considerations. However, one of the most fundamental questions that must be asked and answered is this - "what type of laser is best suited for the application?". Manufacturers and users alike are realizing what, in retrospect, may seem obvious - there is no such thing as a universal laser. In many cases there is one laser type and wavelength that clearly provides the highest quality application results. This paper will examine the application fields of high power, high brightness 10.6 & 1 micron laser welding & cutting and will provide guidelines for selecting the laser that is best suited for the application. Processing speed & edge quality serve as key criteria for cutting. Whereas speed, seam quality & spatter ejection provide the paradigm for welding.

FIBER OPTICS. ACOUSTOOPTICS: Amplification of semiconductor laser radiation in the wavelength range 1.24-1.3 μm by stimulated Raman scattering in an optical fiber

NASA Astrophysics Data System (ADS)

Belotitskiĭ, V. I.; Kuzin, E. A.; Ovsyannikov, D. V.; Petrov, Mikhail P.

1990-07-01

An investigation was made of the influence of weak semiconductor laser radiation on the spectrum of stimulated Raman scattering in a single-mode optical waveguide pumped by a YAG:Nd3+ laser emitting at 1.06 μm. The scattered radiation power increased by a factor exceeding 10 at the semiconductor laser wavelength. A small-signal dynamic gain reached 47 dB. Simultaneous amplification was observed of several modes of multimode semiconductor laser radiation with an intermode spectral interval of 1.3 nm.

Formation of short high-power laser radiation pulses in excimer mediums

NASA Astrophysics Data System (ADS)

Losev, V. F., Sr.; Ivanov, N. G.; Panchenko, Yu. N.

2007-06-01

Presently an excimer mediums continue are examined as one of variants for formation of powerful and over powerful pulses of laser radiation with duration from units of nanosecond up to tens femtosecond. The researches on such powerful installations as "NIKE" (USA) and << SUPER ASHURA >>, Japan) proceed in this direction. The main advantage of excimer mediums is the opportunity to work in a frequency mode, absence of restriction on the size of active area, high uniformity of a gas working medium, high efficiency (up to 10 %) and wide spectral range of laser radiation (KrF, XeCl ~ 2nm, XeF (C-A), Xe IICl ~ 50-100 nanometers). Research in area of high quality laser beams formation in excimer mediums and its amplification in high power amplifiers are carried out the long time in Institute of High Current Electronics SB RAS, Tomsk, Russia. The wide aperture XeCl laser system of MELS-4k is used for these investigations. Last time we take part in program on development of high power excimer laser system with a petawatt level of power. This system supposes the formation and amplification high quality laser beams with different pulse duration from units of nanosecond up to tens femtosecond. We research the possibility of laser beams formation in excimer mediums with ps-ns pulse duration having the low noise and divergence near to diffraction limit. In other hand, we are developing the wide aperture XeF(C-A) amplifier with optical pump on base electron accelerator. According to our estimations of the XeF(C-A) amplifier based on the converter of e-beam energy to the Xe II* fluorescence at 172 nm will allow to obtain up to 100 TW peak power in a 30 fs pulse.

Rapid heating of matter using high power lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bang, Woosuk

2016-04-08

This slide presentation describes motivation (uniform and rapid heating of a target, opportunity to study warm dense matter, study of nuclear fusion reactions), rapid heating of matter with intense laser-driven ion beams, visualization of the expanding warm dense gold and diamond, and nuclear fusion experiments using high power lasers (direct heating of deuterium spheres (radius ~ 10nm) with an intense laser pulse.

Ring resonator based narrow-linewidth semiconductor lasers

NASA Technical Reports Server (NTRS)

Ksendzov, Alexander (Inventor)

2005-01-01

The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.

Frequency offset locking of AlGaAs semiconductor lasers

NASA Astrophysics Data System (ADS)

Kuboki, Katsuhiko; Ohtsu, Motoichi

1987-04-01

Frequency offset locking is proposed as a technique for tracking and sweeping of a semiconductor laser frequency to improve temporal coherence in semiconductor lasers. Experiments were carried out in which a frequency stabilized laser (of residual frequency fluctuation value of 140 Hz at the integration time between 100 ms and 100 s) was used as a master laser, using a digital phase comparator of a large dynamic range (2 pi x 10 to the 11th rad) in the feedback loop to reduce the phase fluctuations of the beat signal between the master laser and the slave laser. As a result, residual frequency fluctuations of the beat signal were as low as 11 Hz at the integration time of 100 s (i.e., the residual frequency fluctuations of the slave laser were almost equal to those of the master laser).

Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

NASA Astrophysics Data System (ADS)

McDaniel, D. L., Jr.; McInerney, J. G.; Raja, M. Y. A.; Schaus, C. F.; Brueck, S. R. J.

1990-05-01

Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump threshold as low as 11 mW, output powers as high as 27 mW at 850 nm, and external differential quantum efficiencies of about 70 percent were observed in GaAs/AlGaAs surface -emitters; spectral brightness 22 times that of the pump laser was also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58 percent were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.

Semiconductor diode laser device adjuvanting intradermal vaccine

PubMed Central

Kimizuka, Yoshifumi; Callahan, John J.; Huang, Zilong; Morse, Kaitlyn; Katagiri, Wataru; Shigeta, Ayako; Bronson, Roderick; Takeuchi, Shu; Shimaoka, Yusuke; Chan, Megan P. K.; Zeng, Yang; Li, Binghao; Chen, Huabiao; Tan, Rhea Y. Y.; Dwyer, Conor; Mulley, Tyler; Leblanc, Pierre; Goudie, Calum; Gelfand, Jeffrey; Tsukada, Kosuke; Brauns, Timothy; Poznansky, Mark C.; Bean, David; Kashiwagi, Satoshi

2017-01-01

A brief exposure of skin to a low-power, non-tissue damaging laser light has been demonstrated to augment immune responses to intradermal vaccination. Both preclinical and clinical studies show that this approach is simple, effective, safe and well tolerated compared to standard chemical or biological adjuvants. Until now, these laser exposures have been performed using a diode-pumped solid-state laser (DPSSL) devices, which are expensive and require labor-intensive maintenance and special training. Development of an inexpensive, easy-to-use and small device would form an important step in translating this technology toward clinical application Here we report that we have established a handheld, near-infrared (NIR) laser device using semiconductor diodes emitting either 1061, 1258, or 1301 nm light that costs less than $4,000, and that this device replicates the adjuvant effect of a DPSSL system in a mouse model of influenza vaccination. Our results also indicate that a broader range of NIR laser wavelengths possess the ability to enhance vaccine immune responses, allowing engineering options for the device design. This small, low-cost device establishes the feasibility of using a laser adjuvant approach for mass-vaccination programs in a clinical setting, opens the door for broader testing of this technology with a variety of vaccines and forms the foundation for development of devices ready for use in the clinic. PMID:28365253

Semiconductor diode laser device adjuvanting intradermal vaccine.

PubMed

Kimizuka, Yoshifumi; Callahan, John J; Huang, Zilong; Morse, Kaitlyn; Katagiri, Wataru; Shigeta, Ayako; Bronson, Roderick; Takeuchi, Shu; Shimaoka, Yusuke; Chan, Megan P K; Zeng, Yang; Li, Binghao; Chen, Huabiao; Tan, Rhea Y Y; Dwyer, Conor; Mulley, Tyler; Leblanc, Pierre; Goudie, Calum; Gelfand, Jeffrey; Tsukada, Kosuke; Brauns, Timothy; Poznansky, Mark C; Bean, David; Kashiwagi, Satoshi

2017-04-25

A brief exposure of skin to a low-power, non-tissue damaging laser light has been demonstrated to augment immune responses to intradermal vaccination. Both preclinical and clinical studies show that this approach is simple, effective, safe and well tolerated compared to standard chemical or biological adjuvants. Until now, these laser exposures have been performed using a diode-pumped solid-state laser (DPSSL) devices, which are expensive and require labor-intensive maintenance and special training. Development of an inexpensive, easy-to-use and small device would form an important step in translating this technology toward clinical application. Here we report that we have established a handheld, near-infrared (NIR) laser device using semiconductor diodes emitting either 1061, 1258, or 1301nm light that costs less than $4000, and that this device replicates the adjuvant effect of a DPSSL system in a mouse model of influenza vaccination. Our results also indicate that a broader range of NIR laser wavelengths possess the ability to enhance vaccine immune responses, allowing engineering options for the device design. This small, low-cost device establishes the feasibility of using a laser adjuvant approach for mass-vaccination programs in a clinical setting, opens the door for broader testing of this technology with a variety of vaccines and forms the foundation for development of devices ready for use in the clinic. Copyright © 2017 Elsevier Ltd. All rights reserved.

High power parallel ultrashort pulse laser processing

NASA Astrophysics Data System (ADS)

Gillner, Arnold; Gretzki, Patrick; Büsing, Lasse

2016-03-01

The class of ultra-short-pulse (USP) laser sources are used, whenever high precession and high quality material processing is demanded. These laser sources deliver pulse duration in the range of ps to fs and are characterized with high peak intensities leading to a direct vaporization of the material with a minimum thermal damage. With the availability of industrial laser source with an average power of up to 1000W, the main challenge consist of the effective energy distribution and disposition. Using lasers with high repetition rates in the MHz region can cause thermal issues like overheating, melt production and low ablation quality. In this paper, we will discuss different approaches for multibeam processing for utilization of high pulse energies. The combination of diffractive optics and conventional galvometer scanner can be used for high throughput laser ablation, but are limited in the optical qualities. We will show which applications can benefit from this hybrid optic and which improvements in productivity are expected. In addition, the optical limitations of the system will be compiled, in order to evaluate the suitability of this approach for any given application.

High Power Laser Welding. [of stainless steel and titanium alloy structures

NASA Technical Reports Server (NTRS)

Banas, C. M.

1972-01-01

A review of recent developments in high power, carbon dixoide laser welding is presented. Deep penetration welding in stainless steel to 0.5-in. thick, high speed welding in thin gage rimmed steel and gas shielded welding in Ti-6Al-4V alloy are described. The effects of laser power, power density, focusing optics, gas-shielding techniques, material properties and weld speed on weld quality and penetration are discussed. It is shown that laser welding performance in thin materials is comparable to that of electron beams. It is further shown that high quality welds, as evidenced by NDT, mechanical and metal-lographic tests, can be achieved. The potential of the laser for industrial welding applications is indicated.

Application of laser spot cutting on spring contact probe for semiconductor package inspection

NASA Astrophysics Data System (ADS)

Lee, Dongkyoung; Cho, Jungdon; Kim, Chan Ho; Lee, Seung Hwan

2017-12-01

A packaged semiconductor has to be electrically tested to make sure they are free of any manufacturing defects. The test interface, typically employed between a Printed Circuit Board and the semiconductor devices, consists of densely populated Spring Contact Probe (SCP). A standard SCP typically consists of a plunger, a barrel, and an internal spring. Among these components, plungers are manufactured by a stamping process. After stamping, plunger connecting arms need to be cut into pieces. Currently, mechanical cutting has been used. However, it may damage to the body of plungers due to the mechanical force engaged at the cutting point. Therefore, laser spot cutting is considered to solve this problem. The plunger arm is in the shape of a rectangular beam, 50 μm (H) × 90 μm (W). The plunger material used for this research is gold coated beryllium copper. Laser parameters, such as power and elapsed time, have been selected to study laser spot cutting. Laser material interaction characteristics such as a crater size, material removal zone, ablation depth, ablation threshold, and full penetration are observed. Furthermore, a carefully chosen laser parameter (Etotal = 1000mJ) to test feasibility of laser spot cutting are applied. The result show that laser spot cutting can be applied to cut SCP.

Effect of interface layer on the performance of high power diode laser arrays

NASA Astrophysics Data System (ADS)

Zhang, Pu; Wang, Jingwei; Xiong, Lingling; Li, Xiaoning; Hou, Dong; Liu, Xingsheng

2015-02-01

Packaging is an important part of high power diode laser (HPLD) development and has become one of the key factors affecting the performance of high power diode lasers. In the package structure of HPLD, the interface layer of die bonding has significant effects on the thermal behavior of high power diode laser packages and most degradations and failures in high power diode laser packages are directly related to the interface layer. In this work, the effects of interface layer on the performance of high power diode laser array were studied numerically by modeling and experimentally. Firstly, numerical simulations using finite element method (FEM) were conducted to analyze the effects of voids in the interface layer on the temperature rise in active region of diode laser array. The correlation between junction temperature rise and voids was analyzed. According to the numerical simulation results, it was found that the local temperature rise of active region originated from the voids in the solder layer will lead to wavelength shift of some emitters. Secondly, the effects of solder interface layer on the spectrum properties of high power diode laser array were studied. It showed that the spectrum shape of diode laser array appeared "right shoulder" or "multi-peaks", which were related to the voids in the solder interface layer. Finally, "void-free" techniques were developed to minimize the voids in the solder interface layer and achieve high power diode lasers with better optical-electrical performances.

Active cooling of pulse compression diffraction gratings for high energy, high average power ultrafast lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alessi, David A.; Rosso, Paul A.; Nguyen, Hoang T.

Laser energy absorption and subsequent heat removal from diffraction gratings in chirped pulse compressors poses a significant challenge in high repetition rate, high peak power laser development. In order to understand the average power limitations, we have modeled the time-resolved thermo-mechanical properties of current and advanced diffraction gratings. We have also developed and demonstrated a technique of actively cooling Petawatt scale, gold compressor gratings to operate at 600W of average power - a 15x increase over the highest average power petawatt laser currently in operation. As a result, combining this technique with low absorption multilayer dielectric gratings developed in ourmore » group would enable pulse compressors for petawatt peak power lasers operating at average powers well above 40kW.« less

Active cooling of pulse compression diffraction gratings for high energy, high average power ultrafast lasers

DOE PAGES

Alessi, David A.; Rosso, Paul A.; Nguyen, Hoang T.; ...

2016-12-26

Laser energy absorption and subsequent heat removal from diffraction gratings in chirped pulse compressors poses a significant challenge in high repetition rate, high peak power laser development. In order to understand the average power limitations, we have modeled the time-resolved thermo-mechanical properties of current and advanced diffraction gratings. We have also developed and demonstrated a technique of actively cooling Petawatt scale, gold compressor gratings to operate at 600W of average power - a 15x increase over the highest average power petawatt laser currently in operation. As a result, combining this technique with low absorption multilayer dielectric gratings developed in ourmore » group would enable pulse compressors for petawatt peak power lasers operating at average powers well above 40kW.« less

Plastic lab-on-a-chip for fluorescence excitation with integrated organic semiconductor lasers.

PubMed

Vannahme, Christoph; Klinkhammer, Sönke; Lemmer, Uli; Mappes, Timo

2011-04-25

Laser light excitation of fluorescent markers offers highly sensitive and specific analysis for bio-medical or chemical analysis. To profit from these advantages for applications in the field or at the point-of-care, a plastic lab-on-a-chip with integrated organic semiconductor lasers is presented here. First order distributed feedback lasers based on the organic semiconductor tris(8-hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM), deep ultraviolet induced waveguides, and a nanostructured microfluidic channel are integrated into a poly(methyl methacrylate) (PMMA) substrate. A simple and parallel fabrication process is used comprising thermal imprint, DUV exposure, evaporation of the laser material, and sealing by thermal bonding. The excitation of two fluorescent marker model systems including labeled antibodies with light emitted by integrated lasers is demonstrated.

Neutron and gamma irradiation effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Neutron and gamma irradiation effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Coherent beam combining architectures for high power tapered laser arrays

NASA Astrophysics Data System (ADS)

Schimmel, G.; Janicot, S.; Hanna, M.; Decker, J.; Crump, P.; Erbert, G.; Witte, U.; Traub, M.; Georges, P.; Lucas-Leclin, G.

2017-02-01

Coherent beam combining (CBC) aims at increasing the spatial brightness of lasers. It consists in maintaining a constant phase relationship between different emitters, in order to combine them constructively in one single beam. We have investigated the CBC of an array of five individually-addressable high-power tapered laser diodes at λ = 976 nm, in two architectures: the first one utilizes the self-organization of the lasers in an interferometric extended-cavity, which ensures their mutual coherence; the second one relies on the injection of the emitters by a single-frequency laser diode. In both cases, the coherent combining of the phase-locked beams is ensured on the front side of the array by a transmission diffractive grating with 98% efficiency. The passive phase-locking of the laser bar is obtained up to 5 A (per emitter). An optimization algorithm is implemented to find the proper currents in the five ridge sections that ensured the maximum combined power on the front side. Under these conditions we achieve a maximum combined power of 7.5 W. In the active MOPA configuration, we can increase the currents in the tapered sections up to 6 A and get a combined power of 11.5 W, corresponding to a combining efficiency of 76%. It is limited by the beam quality of the tapered emitters and by fast phase fluctuations between emitters. Still, these results confirm the potential of CBC approaches with tapered lasers to provide a high-power and high-brightness beam, and compare with the current state-of-the-art with laser diodes.

High power tube solid-state laser with zigzag propagation of pump and laser beam

NASA Astrophysics Data System (ADS)

Savich, Michael

2015-02-01

A novel resonator and pumping design with zigzag propagation of pumping and laser beams permits to design an improved tube Solid State Laser (SSL), solving the problem of short absorption path to produce a high power laser beam (100 - 1000kW). The novel design provides an amplifier module and laser oscillator. The tube-shaped SSL includes a gain element fiber-optically coupled to a pumping source. The fiber optic coupling facilitates light entry at compound Brewster's angle of incidence into the laser gain element and uses internal reflection to follow a "zigzag" path in a generally spiral direction along the length of the tube. Optics are arranged for zigzag propagation of the laser beam, while the cryogenic cooling system is traditional. The novel method of lasing uses advantages of cylindrical geometry to reach the high volume of gain medium with compactness and structural rigidity, attain high pump density and uniformity, and reach a low threshold without excessive increase of the temperature of the crystal. The design minimizes thermal lensing and stress effects, and provides high gain amplification, high power extraction from lasing medium, high pumping and lasing efficiency and a high beam quality.

Low-power-laser therapy used in tendon damage

NASA Astrophysics Data System (ADS)

Strupinska, Ewa

1996-03-01

The following paper covers evaluation of low-power laser therapy results in chronic Achilles tendon damage and external Epicondylalia (tennis elbow). Fifty patients with Achilles damage (18 women and 32 men, age average 30, 24 plus or minus 10, 39 years) and fifty patients having external Epicondyalgiae (31 women and 19 men, age average 44, 36 plus or minus 10, 88 years) have been examined. The patients were irradiated by semiconductor infrared laser wavelength 904 nm separately or together with helium-neon laser wavelength 632.8 nm. The results of therapy have been based on the patient's interviews and examinations of patients as well as on the Laitinen pain questionnaire. The results prove analgesic effects in usage of low- power laser radiation therapy can be obtained.

Nanonewton thrust measurement of photon pressure propulsion using semiconductor laser

NASA Astrophysics Data System (ADS)

Iwami, K.; Akazawa, Taku; Ohtsuka, Tomohiro; Nishida, Hiroyuki; Umeda, Norihiro

2011-09-01

To evaluate the thrust produced by photon pressure emitted from a 100 W class continuous-wave semiconductor laser, a torsion-balance precise thrust stand is designed and tested. Photon emission propulsion using semiconductor light sources attract interests as a possible candidate for deep-space propellant-less propulsion and attitude control system. However, the thrust produced by photon emission as large as several ten nanonewtons requires precise thrust stand. A resonant method is adopted to enhance the sensitivity of the biflier torsional-spring thrust stand. The torsional spring constant and the resonant of the stand is 1.245 × 10-3 Nm/rad and 0.118 Hz, respectively. The experimental results showed good agreement with the theoretical estimation. The thrust efficiency for photon propulsion was also defined. A maximum thrust of 499 nN was produced by the laser with 208 W input power (75 W of optical output) corresponding to a thrust efficiency of 36.7%. The minimum detectable thrust of the stand was estimated to be 2.62 nN under oscillation at a frequency close to resonance.

Latest development of high-power fiber lasers in SPI

NASA Astrophysics Data System (ADS)

Norman, Stephen; Zervas, Mikhail N.; Appleyard, Andrew; Durkin, Michael K.; Horley, Ray; Varnham, Malcolm P.; Nilsson, Johan; Jeong, Yoonchan

2004-06-01

High Power Fiber Lasers (HPFLs) and High Power Fiber Amplifiers (HPFAs) promise a number of benefits in terms of their high optical efficiency, degree of integration, beam quality, reliability, spatial compactness and thermal management. These benefits are driving the rapid adoption of HPFLs in an increasingly wide range of applications and power levels ranging from a few Watts, in for example analytical applications, to high-power >1kW materials processing (machining and welding) applications. This paper describes SPI"s innovative technologies, HPFL products and their performance capabilities. The paper highlights key aspects of the design basis and provides an overview of the applications space in both the industrial and aerospace domains. Single-fiber CW lasers delivering 1kW output power at 1080nm have been demonstrated and are being commercialized for aerospace and industrial applications with wall-plug efficiencies in the range 20 to 25%, and with beam parameter products in the range 0.5 to 100 mm.mrad (corresponding to M2 = 1.5 to 300) tailored to application requirements. At power levels in the 1 - 200 W range, SPI"s proprietary cladding-pumping technology, GTWaveTM, has been employed to produce completely fiber-integrated systems using single-emitter broad-stripe multimode pump diodes. This modular construction enables an agile and flexible approach to the configuration of a range of fiber laser / amplifier systems for operation in the 1080nm and 1550nm wavelength ranges. Reliability modeling is applied to determine Systems martins such that performance specifications are robustly met throughout the designed product lifetime. An extensive Qualification and Reliability-proving programme is underway to qualify the technology building blocks that are utilized for the fiber laser cavity, pump modules, pump-driver systems and thermo-mechanical management. In addition to the CW products, pulsed fiber lasers with pulse energies exceeding 1mJ with peak pulse

Monocrystalline CVD-diamond optics for high-power laser applications

NASA Astrophysics Data System (ADS)

Holly, C.; Traub, M.; Hoffmann, D.; Widmann, C.; Brink, D.; Nebel, C.; Gotthardt, T.; Sözbir, M. C.; Wenzel, C.

2016-03-01

The potential of diamond as an optical material for high-power laser applications in the wavelength regime from the visible spectrum (VIS) to the near infrared (NIR) is investigated. Single-crystal diamonds with lateral dimensions up to 7×7mm2 are grown with microwave plasma assisted chemical vapor deposition (MPACVD) in parallel with up to 60 substrates and are further processed to spherical optics for beam guidance and shaping. The synthetic diamonds offer superior thermal, mechanical and optical properties, including low birefringence, scattering and absorption, also around 1 μm wavelength. We present dielectric (AR and HR) coated single-crystal diamond optics which are tested under high laser power in the multi-kW regime. The thermally induced focal shift of the diamond substrates is compared to the focal shift of a standard collimating and focusing unit for laser cutting made of fused silica optics. Due to the high thermal conductivity and low absorption of the diamond substrates compared to the fused silica optics no additional focal shift caused by a thermally induced refractive index change in the diamond is observed in our experiments. We present experimental results regarding the performance of the diamond substrates with and without dielectric coatings under high power and the influences of growth induced birefringence on the optical quality. Finally, we discuss the potential of the presented diamond lenses for high-power applications in the field of laser materials processing.

Compact RGBY light sources with high luminance for laser display applications

NASA Astrophysics Data System (ADS)

Paschke, Katrin; Blume, Gunnar; Werner, Nils; Müller, André; Sumpf, Bernd; Pohl, Johannes; Feise, David; Ressel, Peter; Sahm, Alexander; Bege, Roland; Hofmann, Julian; Jedrzejczyk, Daniel; Tränkle, Günther

2018-02-01

Watt-class visible laser light with a high luminance can be created with high-power GaAs-based lasers either directly in the red spectral region or using single-pass second harmonic generation (SHG) for the colors in the blue-yellow spectral region. The concepts and results of red- and near infrared-emitting distributed Bragg reflector tapered lasers and master oscillator power amplifier systems as well as their application for SHG bench-top experiments and miniaturized modules are presented. Examples of these high-luminance light sources aiming at different applications such as flying spot display or holographic 3D cinema are discussed in more detail. The semiconductor material allows an easy adaptation of the wavelength allowing techniques such as six-primary color 3D projection or color space enhancement by adding a fourth yellow color.

Dispersion of TE modes in slab waveguides with reference to double heterostructure semiconductor lasers

NASA Astrophysics Data System (ADS)

Buus, J.

1980-06-01

The group index for TE modes in an asymmetrical slab waveguide is investigated, and a simple analytical expression is derived. It is shown that the product of the phase and group indices is related to the power fraction in each of the three layers of the waveguide. The results are of interest in the analysis of double heterostructure semiconductor lasers. Theoretical and experimental results for lasers emitting at 1.55 microns are compared.

Long distance high power optical laser fiber break detection and continuity monitoring systems and methods

DOEpatents

Rinzler, Charles C.; Gray, William C.; Faircloth, Brian O.; Zediker, Mark S.

2016-02-23

A monitoring and detection system for use on high power laser systems, long distance high power laser systems and tools for performing high power laser operations. In particular, the monitoring and detection systems provide break detection and continuity protection for performing high power laser operations on, and in, remote and difficult to access locations.

Semiconductor lasers with a continuous tuning range above 100 nm in the nearest IR spectral region

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kostin, Yu O; Lobintsov, A A; Shramenko, M V

2015-08-31

We have developed two new types of lasers based on quantum-confined semiconductor optical amplifiers with an acousto-optic tunable filter in an external fibre ring cavity. The lasers offer continuous wavelength tuning ranges from 780 to 885 and from 880 to 1010 nm, 20 mW of cw output power, and a tuning rate up to 10{sup 4} nm s{sup -1} at an instantaneous spectral linewidth less than 0.1 nm. (lasers)

Thermo-optic locking of a semiconductor laser to a microcavity resonance.

PubMed

McRae, T G; Lee, Kwan H; McGovern, M; Gwyther, D; Bowen, W P

2009-11-23

We experimentally demonstrate thermo-optic locking of a semiconductor laser to an integrated toroidal optical microcavity. The lock is maintained for time periods exceeding twelve hours, without requiring any electronic control systems. Fast control is achieved by optical feedback induced by scattering centers within the microcavity, with thermal locking due to optical heating maintaining constructive interference between the cavity and the laser. Furthermore, the optical feedback acts to narrow the laser linewidth, with ultra high quality microtoroid resonances offering the potential for ultralow linewidth on-chip lasers.

Optical double-locked semiconductor lasers

NASA Astrophysics Data System (ADS)

AlMulla, Mohammad

2018-06-01

Self-sustained period-one (P1) nonlinear dynamics of a semiconductor laser are investigated when both optical injection and modulation are applied for stable microwave frequency generation. Locking the P1 oscillation through modulation on the bias current, injection strength, or detuning frequency stabilizes the P1 oscillation. Through the phase noise variance, the different modulation types are compared. It is demonstrated that locking the P1 oscillation through optical modulation on the output of the master laser outperforms bias-current modulation of the slave laser. Master laser modulation shows wider P1-oscillation locking range and lower phase noise variance. The locking characteristics of the P1 oscillation also depend on the operating conditions of the optical injection system

Simple method enabling pulse on command from high power, high frequency lasers

NASA Astrophysics Data System (ADS)

Baer, David J.; Marshall, Graham D.; Coutts, David W.; Mildren, Richard P.; Withford, Michael J.

2006-09-01

A method for addressing individual laser pulses in high repetition frequency systems using an intracavity optical chopper and novel electronic timing system is reported. This "pulse on command" capability is shown to enable free running and both subharmonic pulse rate and burst mode operation of a high power, high pulse frequency copper vapor laser while maintaining a fixed output pulse energy. We demonstrate that this technique can be used to improve feature finish when laser micromachining metal.

Comparison Between NIST and AF Laser Energy Standards Using High Power Lasers

PubMed Central

Li, Xiaoyu; Scott (Retired), Thomas; Cromer, Chris; Cooper, David; Comisford, Steven

2007-01-01

We report the results of a high-energy laser calorimeter comparison conducted by the National Institute of Standards and Technology (NIST), Boulder, Colorado and the U.S. Air Force Primary Standards laboratory (AFPSL), Heath, Ohio. A laser power meter, used as a transfer standard, was calibrated at each laboratory, sequentially, and the measurement results were compared. These measurements were performed at a nominal power of 800 W and a wavelength of 10.6 μm using CO2 lasers. Excellent measurement agreement (1.02 %) was demonstrated, which was well within each of the expanded uncertainties from the two laboratories involved in this comparison. PMID:27110471

Integrated semiconductor twin-microdisk laser under mutually optical injection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng

2015-05-11

We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due tomore » strong optical interaction between the two microdisks.« less

Quantum weak turbulence with applications to semiconductor lasers

NASA Astrophysics Data System (ADS)

Lvov, Yuri Victorovich

Based on a model Hamiltonian appropriate for the description of fermionic systems such as semiconductor lasers, we describe a natural asymptotic closure of the BBGKY hierarchy in complete analogy with that derived for classical weak turbulence. The main features of the interaction Hamiltonian are the inclusion of full Fermi statistics containing Pauli blocking and a simple, phenomenological, uniformly weak two particle interaction potential equivalent to the static screening approximation. The resulting asymytotic closure and quantum kinetic Boltzmann equation are derived in a self consistent manner without resorting to a priori statistical hypotheses or cumulant discard assumptions. We find a new class of solutions to the quantum kinetic equation which are analogous to the Kolmogorov spectra of hydrodynamics and classical weak turbulence. They involve finite fluxes of particles and energy across momentum space and are particularly relevant for describing the behavior of systems containing sources and sinks. We explore these solutions by using differential approximation to collision integral. We make a prima facie case that these finite flux solutions can be important in the context of semiconductor lasers. We show that semiconductor laser output efficiency can be improved by exciting these finite flux solutions. Numerical simulations of the semiconductor Maxwell Bloch equations support the claim.

Atmospheric propagation of high power laser radiation at different weather conditions

NASA Astrophysics Data System (ADS)

Pargmann, Carsten; Hall, Thomas; Duschek, Frank; Handke, Jürgen

2016-05-01

Applications based on the propagation of high power laser radiation through the atmosphere are limited in range and effect, due to weather dependent beam wandering, beam deterioration, and scattering processes. Security and defense related application examples are countermeasures against hostile projectiles and the powering of satellites and aircrafts. For an examination of the correlations between weather condition and laser beam characteristics DLR operates at Lampoldshausen a 130 m long free transmission laser test range. Sensors around this test range continuously monitor turbulence strength, visibility, precipitation, temperature, and wind speed. High power laser radiation is obtained by a TruDisk 6001 disk laser (Trumpf company) yielding a maximum output power of 6 kW at a wavelength of 1030 nm. The laser beam is expanded to 180 mm and focused along the beam path. Power and intensity distribution are measured before and after propagation, providing information about the atmospheric transmission and alterations of diameter and position of the laser beam. Backscattered laser light is acquired by a photo receiver. As a result, measurements performed at different weather conditions show a couple of correlations to the characteristics of the laser beam. The experimental results are compared to a numerical analysis. The calculations are based on the Maxwell wave equation in Fresnel approximation. The turbulence is considered by the introduction of phase screens and the "von Karman" spectrum.

Efficient high-power narrow-linewidth all-fibred linearly polarized ytterbium laser source

NASA Astrophysics Data System (ADS)

Bertrand, Anthony; Liégeois, Flavien; Hernandez, Yves; Giannone, Domenico

2012-06-01

We report on experimental results on a high power, all-fibred, linearly polarized, mode-locked laser at 1.03 μm. The laser generates pulses of 40 ps wide at a repetition rate of 52 MHz, exhibiting 12 kW peak power. Dispersion in optical fibres is controlled to obtain both high power and narrow spectral linewidth. The average output power reached is 25 W with a spectral linewidth of 380 pm and a near diffraction limit beam (M2 < 1.2). This laser is an ideal candidate for applications like IR spectroscopy, where high peak power and narrow linewidth are required for subsequent wavelength conversion.

Study of high-power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy

NASA Astrophysics Data System (ADS)

Ankudinov, A.; Titkov, A. N.; Evtikhiev, Vadim P.; Kotelnikov, Eugeny Y.; Bazhenov, N.; Zegrya, Georgy G.; Huhtinen, H.; Laiho, R.

2003-06-01

One of the important factors that restricts the power limit of semiconductor lasers is a catastrophic optical mirror damage. This process is significantly suppressed through decreasing the optical power density due to its redistribution over the broad transverse waveguide (BW). Recently it was shown that record-breaking values of the quasicontinuous and continuous-wave (QWC and CW) output power for 100-μm-wide-aperture devices can be achieved by incorporating a broad transverse waveguide into 0.97 μm emitting Al-free InGaAs(P)/InGaP/GaAs and Al-containing InGaAs/AlGaAs/GaAs separate confinement heterostructure quantum-well lasers (SCH-QWL). Another important factor limiting the CW output power is the Joule overheating of a laser diode due to an extra serial resistance. Traditionally, a decrease in the resistance is achieved by development of the contacts, whereas a voltage distribution across the device structure is not analyzed properly. At high operating currents the applied voltage can drop not only across the n-p-junction, but also at certain additional regions of the laser structure depending on a particular design of the device. Electrostatic force microscopy (EFM) provides a very promising method to study the voltage distribution across an operating device with a nanometer space resolution. An application of EFM for diagnostics of III-V laser diodes without and under applied biases have been recently demonstrated. However, the most interesting range of the biases, the lazing regime, has not been studied yet.

High-throughput machining using a high-average power ultrashort pulse laser and high-speed polygon scanner

NASA Astrophysics Data System (ADS)

Schille, Joerg; Schneider, Lutz; Streek, André; Kloetzer, Sascha; Loeschner, Udo

2016-09-01

High-throughput ultrashort pulse laser machining is investigated on various industrial grade metals (aluminum, copper, and stainless steel) and Al2O3 ceramic at unprecedented processing speeds. This is achieved by using a high-average power picosecond laser in conjunction with a unique, in-house developed polygon mirror-based biaxial scanning system. Therefore, different concepts of polygon scanners are engineered and tested to find the best architecture for high-speed and precision laser beam scanning. In order to identify the optimum conditions for efficient processing when using high-average laser powers, the depths of cavities made in the samples by varying the processing parameter settings are analyzed and, from the results obtained, the characteristic removal values are specified. For overlapping pulses of optimum fluence, the removal rate is as high as 27.8 mm3/min for aluminum, 21.4 mm3/min for copper, 15.3 mm3/min for stainless steel, and 129.1 mm3/min for Al2O3, when a laser beam of 187 W average laser powers irradiates. On stainless steel, it is demonstrated that the removal rate increases to 23.3 mm3/min when the laser beam is very fast moving. This is thanks to the low pulse overlap as achieved with 800 m/s beam deflection speed; thus, laser beam shielding can be avoided even when irradiating high-repetitive 20-MHz pulses.

Advanced Optical Fibers for High power Fiber lasers

DTIC Science & Technology

2015-08-24

crystal fiber cladding . Advanced Optical Fibers for High Power Fiber Lasers http://dx.doi.org/10.5772/58958 223 lengths above the second-order mode cut...brightness multimode diode lasers for a given pump waveguide dimen‐ sion. In conventional double- clad fibers, low-index polymer coatings are typically used to...was below 0.2. The fiber was passive and there was no laser demonstration in this first attempt. The first cladding - pumping demonstration in an

Estimation of Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

NASA Technical Reports Server (NTRS)

Numata, Kenji; Camp, Jordan

2012-01-01

We evaluate mechanical thermal noise in semiconductor lasers, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Our simple model determines an underlying fundamental limit for the frequency noise of free-running semiconductor laser, and provides a framework: where the noise may be potentially reduced with improved design.

High-power broad-area diode lasers optimized for fiber laser pumping

NASA Astrophysics Data System (ADS)

Gilly, J.; Friedmann, P.; Kissel, H.; Biesenbach, J.; Kelemen, M. T.

2012-03-01

In diode laser applications for fibre laser pumping and materials processing high brightness becomes more and more important. At the moment fibre coupled modules benefit from continuous improvement of Broad-Area (BA) lasers on the chip level regarding output power, efficiency and far-field characteristics. To achieve high brightness not only the output power must be increased, but also the far field angles have to be maintained or even decreased because brightness is proportional to output power divided by beam quality. Typically fast axis far fields show mostly a current independent behaviour, for broad-area lasers far-fields in the slow axis suffer from a strong current and temperature dependence, limiting the brightness. These limitations can be overcomed by carefully optimizing epitaxy-design and processing and also thermal management of the mounted device. The easiest way to achieve a good thermal management of BA-Lasers is to increase the resonator length while simultaneously decreasing internal losses of the epitaxy structure. To fulfill these issues, we have realized MBE grown InGaAs/AlGaAs broad-area with resonator lengths between 4mm and 6mm emitting at 976nm. To evaluate the brightness of these broad-area lasers single emitters have been mounted p-side down. Near- and far-fields have been carefully investigated. For a 4mm long broad-area laser with around 100μm emission width a beam parameter product of less than 3.5 mm x mrad has been achieved at 10W with a slope efficiency of more than 1.1W/A and a maximum wall-plug efficiency of more than 67%. For a device with 6mm resonator length we have reached a BPP of less than 3.5mm x mrad at 14W in slow axis direction which results in a brightness around 130MW/cm2 sr, which is to our knowledge the highest brightness reported so far for BA-lasers.

Modes in light wave propagating in semiconductor laser

NASA Technical Reports Server (NTRS)

Manko, Margarita A.

1994-01-01

The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

High power laser-mechanical drilling bit and methods of use

DOEpatents

Grubb, Daryl L.; Kolachalam, Sharath K.; Faircloth, Brian O.; Rinzler, Charles C.; Allen, Erik C.; Underwood, Lance D.; Zediker, Mark S.

2017-02-07

An apparatus with a high power laser-mechanical bit for use with a laser drilling system and a method for advancing a borehole. The laser-mechanical bit has a beam path and mechanical removal devices that provide for the removal of laser-affected rock to advance a borehole.

Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

PubMed

Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

2016-11-15

Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

PubMed Central

Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

2016-01-01

Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

A novel "gain chip" concept for high-power lasers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Li, Min; Li, Mingzhong; Wang, Zhenguo; Yan, Xiongwei; Jiang, Xinying; Zheng, Jiangang; Cui, Xudong; Zhang, Xiaomin

2017-05-01

High-power lasers, including high-peak power lasers (HPPL) and high-average power lasers (HAPL), attract much interest for enormous variety of applications in inertial fusion energy (IFE), materials processing, defense, spectroscopy, and high-field physics research. To meet the requirements of high efficiency and quality, a "gain chip" concept is proposed to properly design the pumping, cooling and lasing fields. The gain chip mainly consists of the laser diode arrays, lens duct, rectangle wave guide and slab-shaped gain media. For the pumping field, the pump light will be compressed and homogenized by the lens duct to high irradiance with total internal reflection, and further coupled into the gain media through its two edge faces. For the cooling field, the coolant travels along the flow channel created by the adjacent slabs in the other two edge-face direction, and cool the lateral faces of the gain media. For the lasing field, the laser beam travels through the lateral faces and experiences minimum thermal wavefront distortions. Thereby, these three fields are in orthogonality offering more spatial freedom to handle them during the construction of the lasers. Transverse gradient doping profiles for HPPL and HAPL have been employed to achieve uniform gain distributions (UGD) within the gain media, respectively. This UGD will improve the management for both amplified spontaneous emission (ASE) and thermal behavior. Since each "gain chip" has its own pump source, power scaling can be easily achieved by placing identical "gain chips" along the laser beam axis without disturbing the gain and thermal distributions. To detail our concept, a 1-kJ pulsed amplifier is designed and optical-to-optical efficiency up to 40% has been obtained. We believe that with proper coolant (gas or liquid) and gain media (Yb:YAG, Nd:glass or Nd:YAG) our "gain chip" concept might provide a general configuration for high-power lasers with high efficiency and quality.

Novel High Power Type-I Quantum Well Cascade Diode Lasers

DTIC Science & Technology

2017-08-30

Novel High Power Type-I Quantum Well Cascade Diode Lasers The views, opinions and/or findings contained in this report are those of the author(s...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6... High Power Type-I Quantum Well Cascade Diode Lasers Report Term: 0-Other Email: leon.shterengas@stonybrook.edu Distribution Statement: 1-Approved

Wavelength-resonant surface-emitting semiconductor laser

DOEpatents

Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

1989-01-01

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

High-power arrays of quantum cascade laser master-oscillator power-amplifiers.

PubMed

Rauter, Patrick; Menzel, Stefan; Goyal, Anish K; Wang, Christine A; Sanchez, Antonio; Turner, George; Capasso, Federico

2013-02-25

We report on multi-wavelength arrays of master-oscillator power-amplifier quantum cascade lasers operating at wavelengths between 9.2 and 9.8 μm. All elements of the high-performance array feature longitudinal (spectral) as well as transverse single-mode emission at peak powers between 2.7 and 10 W at room temperature. The performance of two arrays that are based on different seed-section designs is thoroughly studied and compared. High output power and excellent beam quality render the arrays highly suitable for stand-off spectroscopy applications.

High-power ultrashort fiber laser for solar cells micromachining

NASA Astrophysics Data System (ADS)

Lecourt, J.-B.; Duterte, C.; Liegeois, F.; Lekime, D.; Hernandez, Y.; Giannone, D.

2012-02-01

We report on a high-power ultra-short fiber laser for thin film solar cells micromachining. The laser is based on Chirped Pulse Amplification (CPA) scheme. The pulses are stretched to hundreds of picoseconds prior to amplification and can be compressed down to picosecond at high energy. The repetition rate is adjustable from 100 kHz to 1 MHz and the optical average output power is close to 13 W (before compression). The whole setup is fully fibred, except the compressor achieved with bulk gratings, resulting on a compact and reliable solution for cold ablation.

Raman Spectroscopy with High Power Diode Lasers

NASA Astrophysics Data System (ADS)

Claps, Ricardo

1998-10-01

Our group has demonstrated in the past that it is possible to record, with a high power Diode Laser, Raman spectra of low pressure gases. An external cavity was used to lock the laser into single mode operation. Also, the use of atomic filters permitted the observation of rotational Raman lines only 1 cm-1 apart from the excitation frequency ( J.Sabbaghzadeh, M.Fink, et-all; Applied Physics ) B 60 (1995), p.261-265.. We present now an improved version of the experiment, with beamshaping optics that help to correct the highly astigmatic output of the Diode Laser; this allowed us to put 300 mW of cw power through a multi-pass cell in the sample chamber, `increasing the signal by a factor of ~ 15. We present examples of rotational and vibrational spectra from CO_2, N_2, and air. The results show that we are able to obtain spectra with a S/N ratio of 0.011 per Torr, per √s, which means that we can detect 1 Torr of these gases in a few hours of exposure, at a maximum resolution of 0.85 cm-1 over a range of 200 cm-1. The laser stability in power, frequency and bandwidth, ensures the feasibility of long exposure experiments. We plan to apply the Raman technique to study flow properties of gases under different dynamic conditions; as a result, we expect to use our instrument for the study of the vibrational Raman spectra of alkali-halide dimers in vapour phase at low pressures.

Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications

NASA Astrophysics Data System (ADS)

Opalevs, D.; Scholz, M.; Stuhler, J.; Gilfert, C.; Liu, L. J.; Wang, X. Y.; Vetter, A.; Kirner, R.; Scharf, T.; Noell, W.; Rockstuhl, C.; Li, R. K.; Chen, C. T.; Voelkel, R.; Leisching, P.

2018-02-01

We present a novel industrial-grade prototype version of a continuous-wave 193 nm laser system entirely based on solid state pump laser technology. Deep-ultraviolet emission is realized by frequency-quadrupling an amplified diode laser and up to 20 mW of optical power were generated using the nonlinear crystal KBBF. We demonstrate the lifetime of the laser system for different output power levels and environmental conditions. The high stability of our setup was proven in > 500 h measurements on a single spot, a crystal shifter multiplies the lifetime to match industrial requirements. This laser improves the relative intensity noise, brilliance, wall-plug efficiency and maintenance cost significantly. We discuss first lithographic experiments making use of this improvement in photon efficiency.

Thermal Response to High-Power Holmium Laser Lithotripsy.

PubMed

Aldoukhi, Ali H; Ghani, Khurshid R; Hall, Timothy L; Roberts, William W

2017-12-01

The aim of this study was to investigate "caliceal" fluid temperature changes during holmium laser activation/lithotripsy using settings up to 40 W power output with different irrigation flow rates. The experimental system consisted of a glass test tube (diameter 10 mm/length 75 mm) filled with deionized water, to mimic a calix. Real-time temperature was recorded using a thermocouple (Physitemp, NJ) positioned 5 mm from the bottom of the tube. A 200 μm laser fiber (Flexiva; Boston Scientific, MA) was introduced through the working channel of a disposable ureteroscope (LithoVue; Boston Scientific) and the laser fiber tip was positioned 15 mm above the bottom of the test tube. Deionized water irrigation (room temperature) through the working channel of the ureteroscope was delivered at flow rates of 0, 7-8, 14-15, and 38-40 mL/minute. A 120-W holmium laser (pulse 120; Lumenis, CA) was used. The following settings were explored: 0.5 J × 10 Hz, 1.0 J × 10 Hz, 0.5 J × 20 Hz, 1.0 J × 20 Hz, 0.5 J × 40 Hz, 1.0 J × 40 Hz, and 0.5 J × 80 Hz. During each experiment, the laser was activated continuously for 60 seconds. Temperature increased with increasing laser power output and decreasing irrigation flow rate. The highest temperature, 70.3°C (standard deviation 2.7), occurred with laser setting of 1.0 J × 40 Hz and no irrigation after 60 seconds of continuous laser firing. None of the tested laser settings and irrigation parameters produced temperature exceeding 51°C when activated for only 10 seconds of continuous laser firing. High-power holmium settings fired in long bursts with low irrigation flow rates can generate high fluid temperatures in a laboratory "caliceal" model. Awareness of this risk allows urologist to implement a variety of techniques (higher irrigation flow rates, intermittent laser activation, and potentially cooled irrigation fluid) to control and mitigate thermal

High-power ultralong-wavelength Tm-doped silica fiber laser cladding-pumped with a random distributed feedback fiber laser

PubMed Central

Jin, Xiaoxi; Du, Xueyuan; Wang, Xiong; Zhou, Pu; Zhang, Hanwei; Wang, Xiaolin; Liu, Zejin

2016-01-01

We demonstrated a high-power ultralong-wavelength Tm-doped silica fiber laser operating at 2153 nm with the output power exceeding 18 W and the slope efficiency of 25.5%. A random distributed feedback fiber laser with the center wavelength of 1173 nm was employed as pump source of Tm-doped fiber laser for the first time. No amplified spontaneous emissions or parasitic oscillations were observed when the maximum output power reached, which indicates that employing 1173 nm random distributed feedback fiber laser as pump laser is a feasible and promising scheme to achieve high-power emission of long-wavelength Tm-doped fiber laser. The output power of this Tm-doped fiber laser could be further improved by optimizing the length of active fiber, reflectivity of FBGs, increasing optical efficiency of pump laser and using better temperature management. We also compared the operation of 2153 nm Tm-doped fiber lasers pumped with 793 nm laser diodes, and the maximum output powers were limited to ~2 W by strong amplified spontaneous emission and parasitic oscillation in the range of 1900–2000 nm. PMID:27416893

High-power ultralong-wavelength Tm-doped silica fiber laser cladding-pumped with a random distributed feedback fiber laser.

PubMed

Jin, Xiaoxi; Du, Xueyuan; Wang, Xiong; Zhou, Pu; Zhang, Hanwei; Wang, Xiaolin; Liu, Zejin

2016-07-15

We demonstrated a high-power ultralong-wavelength Tm-doped silica fiber laser operating at 2153 nm with the output power exceeding 18 W and the slope efficiency of 25.5%. A random distributed feedback fiber laser with the center wavelength of 1173 nm was employed as pump source of Tm-doped fiber laser for the first time. No amplified spontaneous emissions or parasitic oscillations were observed when the maximum output power reached, which indicates that employing 1173 nm random distributed feedback fiber laser as pump laser is a feasible and promising scheme to achieve high-power emission of long-wavelength Tm-doped fiber laser. The output power of this Tm-doped fiber laser could be further improved by optimizing the length of active fiber, reflectivity of FBGs, increasing optical efficiency of pump laser and using better temperature management. We also compared the operation of 2153 nm Tm-doped fiber lasers pumped with 793 nm laser diodes, and the maximum output powers were limited to ~2 W by strong amplified spontaneous emission and parasitic oscillation in the range of 1900-2000 nm.

Review on the dynamics of semiconductor nanowire lasers

NASA Astrophysics Data System (ADS)

Röder, Robert; Ronning, Carsten

2018-03-01

Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

High-power diode laser bars as pump sources for fiber lasers and amplifiers (Invited Paper)

NASA Astrophysics Data System (ADS)

Bonati, G.; Hennig, P.; Wolff, D.; Voelckel, H.; Gabler, T.; Krause, U.; T'nnermann, A.; Reich, M.; Limpert, J.; Werner, E.; Liem, A.

2005-04-01

Fiber lasers are pumped by fibercoupled, multimode single chip devices at 915nm. That"s what everybody assumes when asked for the type of fiber laser pumps and it was like this for many years. Coming up as an amplifier for telecom applications, the amount of pump power needed was in the range of several watts. Highest pump powers for a limited market entered the ten watts range. This is a range of power that can be covered by highly reliable multimode chips, that have to survive up to 25 years, e.g. in submarine applications. With fiber lasers entering the power range and the application fields of rod and thin disc lasers, the amount of pump power needed raised into the area of several hundred watts. In this area of pump power, usually bar based pumps are used. This is due to the much higher cost pressure of the industrial customers compared to telecom customers. We expect more then 70% of all industrial systems to be pumped by diode laser bars. Predictions that bar based pumps survive for just a thousand hours in cw-operation and fractions of this if pulsed are wrong. Bar based pumps have to perform on full power for 10.000h on Micro channel heat sinks and 20.000h on passive heatsinks in industrial applications, and they do. We will show a variety of data, "real" long time tests and statistics from the JENOPTIK Laserdiode as well as data of thousands of bars in the field, showing that bar based pumps are not just well suitable for industrial applications on high power levels, but even showing benefits compared to chip based pumps. And it"s reasonable, that the same objectives of cost effectiveness, power and lifetime apply as well to thin disc, rod and slab lasers as to fiber lasers. Due to the pumping of fiber lasers, examples will be shown, how to utilize bars for high brightness fiber coupling. In this area, the automation is on its way to reduce the costs on the fibercoupling, similar to what had been done in the single chip business. All these efforts are

Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars

NASA Astrophysics Data System (ADS)

Hülsewede, R.; Schulze, H.; Sebastian, J.; Schröder, D.; Meusel, J.; Hennig, P.

2007-02-01

There are strong demands at the market to increase power and reliability for 808 nm diode laser bars. Responding to this JENOPTIK Diode Lab GmbH developed high performance 808 nm diode laser bars in the AlGaAs/GaAs material system with special emphasis to high power operation and long term stability. Optimization of the epitaxy structure and improvements in the diode laser bar design results in very high slope efficiency of >1.2 W/A, low threshold current and small beam divergence in slow axis direction. Including low serial resistance the overall wall plug efficiency is up to 65% for our 20%, 30% and 50% filling factor 10 mm diode laser bars. With the JENOPTIK Diode Lab cleaving and coating technique the maximum output power is 205 W in CW operation and 377 W in QCW operation (200 μs, 2% duty cycle) for bars with 50% filling factor. These bars mounted on micro channel cooled package are showing a very high reliability of >15.000 h. Mounted on conductive cooled package high power operation at 100 W is demonstrated for more than 5000h.

[Development of a High Power Green Laser Therapeutic Equipment for Hyperplasia of Prostate].

PubMed

Liang, Jie; Kang, Hongxiang; Shen, Benjian; Zhao, Lusheng; Wu, Xinshe; Chen, Peng; Chang, Aihong; Guo Hua; Guo, Jiayu

2015-09-01

The basic theory of high power green laser equipment for prostate hyperplasia therapy and the components of the system developed are introduced. Considering the requirements of the clinical therapy, the working process of the high power green laser apparatus are designed and the laser with stable output at 120 W is achieved. The controlling hardware and application software are developed, and the safety step is designed. The high power green laser apparatus manufactured with characteristics of stable output, multifunctional and friendly interface provides a choices of prostate hyperplasia therapy for using nationalization instrument.

High power diode lasers emitting from 639 nm to 690 nm

NASA Astrophysics Data System (ADS)

Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

2014-03-01

There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

Self-channeling of high-power laser pulses through strong atmospheric turbulence

NASA Astrophysics Data System (ADS)

Peñano, J.; Palastro, J. P.; Hafizi, B.; Helle, M. H.; DiComo, G. P.

2017-07-01

We present an unusual example of truly long-range propagation of high-power laser pulses through strong atmospheric turbulence. A form of nonlinear self-channeling is achieved when the laser power is close to the self-focusing power of air and the transverse dimensions of the pulse are smaller than the coherence diameter of turbulence. In this mode, nonlinear self-focusing counteracts diffraction, and turbulence-induced spreading is greatly reduced. Furthermore, the laser intensity is below the ionization threshold so that multiphoton absorption and plasma defocusing are avoided. Simulations show that the pulse can propagate many Rayleigh lengths (several kilometers) while maintaining a high intensity. In the presence of aerosols, or other extinction mechanisms that deplete laser energy, the pulse can be chirped to maintain the channeling.

Method to improve near-field nonlinearity of a high-power diode laser array on a microchannel cooler

NASA Astrophysics Data System (ADS)

Zhang, Hongyou; Jia, Yangtao; Cai, Wanshao; Tao, Chunhua; Zah, Chung-en; Liu, Xingsheng

2018-03-01

Due to thermal stress, each emitter in a semiconductor laser bar or array is vertically displaced along the p-n junction; the result is that each emitter is not in a line, called near-field nonlinearity. Near-field nonlinearity along a laser bar (also known as "SMILE" effect) degrades the laser beam brightness, which causes an adverse effect on optical coupling and beam shaping. A large SMILE value causes a large divergence angle after collimation and a wider line after collimation and focusing. We simulate the factors affecting the SMILE value of a high-power diode laser array on a microchannel cooler (MCC). According to the simulation results, we have fabricated a series of laser bars bonded on MCCs with lower SMILE value. After simulation and experiment analysis, we found the key factor to affect SMILE is the deformation of the thin MCC because of the distribution of strain and stress in it. We also decreased the SMILE value of 1-cm-wide full bar AuSn bonded on MCCs from 12 to 1 μm by balancing force on MCC to minimize the deformation.

The advances and characteristics of high-power diode laser materials processing

NASA Astrophysics Data System (ADS)

Li, Lin

2000-10-01

This paper presents a review of the direct applications of high-power diode lasers for materials processing including soldering, surface modification (hardening, cladding, glazing and wetting modifications), welding, scribing, sheet metal bending, marking, engraving, paint stripping, powder sintering, synthesis, brazing and machining. The specific advantages and disadvantages of diode laser materials processing are compared with CO 2, Nd:YAG and excimer lasers. An effort is made to identify the fundamental differences in their beam/material interaction characteristics and materials behaviour. Also an appraisal of the future prospects of the high-power diode lasers for materials processing is given.

Quasi-passive heat sink for high-power laser diodes

NASA Astrophysics Data System (ADS)

Vetrovec, John

2009-02-01

We report on a novel heat sink for high-power laser diodes offering unparalleled capacity in high-heat flux handling and temperature control. The heat sink uses a liquid coolant flowing at high speed in a miniature closed and sealed loop. Diode waste heat is received at high flux and transferred to environment, coolant fluid, heat pipe, or structure at a reduced flux. When pumping solid-state or alkali vapor lasers, diode wavelength can be electronically tuned to the absorption features of the laser gain medium. This paper presents the heat sink physics, engineering design, performance modeling, and configurations.

High-power microwave generation using optically activated semiconductor switches

NASA Astrophysics Data System (ADS)

Nunnally, William C.

1990-12-01

The two prominent types of optically controlled switches, the optically controlled linear (OCL) switch and the optically initiated avalanche (OIA) switch, are described, and their operating parameters are characterized. Two transmission line approaches, one using a frozen-wave generator and the other using an injected-wave generator, for generation of multiple cycles of high-power microwave energy using optically controlled switches are discussed. The point design performances of the series-switch, frozen-wave generator and the parallel-switch, injected-wave generator are compared. The operating and performance limitations of the optically controlled switch types are discussed, and additional research needed to advance the development of the optically controlled, bulk, semiconductor switches is indicated.

Advancements of ultra-high peak power laser diode arrays

NASA Astrophysics Data System (ADS)

Crawford, D.; Thiagarajan, P.; Goings, J.; Caliva, B.; Smith, S.; Walker, R.

2018-02-01

Enhancements of laser diode epitaxy in conjunction with process and packaging improvements have led to the availability of 1cm bars capable of over 500W peak power at near-infrared wavelengths (770nm to 1100nm). Advances in cooler design allow for multi-bar stacks with bar-to-bar pitches as low as 350μm and a scalable package architecture enabled a single diode assembly with total peak powers of over 1MegaWatt of peak power. With the addition of micro-optics, overall array brightness greater than 10kW/cm2 was achieved. Performance metrics of barbased diode lasers specifically engineered for high peak power and high brightness at wavelengths and pulse conditions commonly used to pump a variety of fiber and solid-state materials are presented.

Systems and assemblies for transferring high power laser energy through a rotating junction

DOEpatents

Norton, Ryan J.; McKay, Ryan P.; Fraze, Jason D.; Rinzler, Charles C.; Grubb, Daryl L.; Faircloth, Brian O.; Zediker, Mark S.

2016-01-26

There are provided high power laser devices and systems for transmitting a high power laser beam across a rotating assembly, including optical slip rings and optical rotational coupling assemblies. These devices can transmit the laser beam through the rotation zone in free space or within a fiber.

Method and apparatus for delivering high power laser energy over long distances

DOEpatents

Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O; Koblick, Yeshaya; Moxley, Joel F

2013-08-20

Systems, devices and methods for the transmission of 1 kW or more of laser energy deep into the earth and for the suppression of associated nonlinear phenomena. Systems, devices and methods for the laser drilling of a borehole in the earth. These systems can deliver high power laser energy down a deep borehole, while maintaining the high power to advance such boreholes deep into the earth and at highly efficient advancement rates.

Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology.

PubMed

Li, Jingsi; Wang, Huan; Chen, Xiangfei; Yin, Zuowei; Shi, Yuechun; Lu, Yanqing; Dai, Yitang; Zhu, Hongliang

2009-03-30

In this paper we report, to the best of our knowledge, the first experimental realization of distributed feedback (DFB) semiconductor lasers based on reconstruction-equivalent-chirp (REC) technology. Lasers with different lasing wavelengths are achieved simultaneously on one chip, which shows a potential for the REC technology in combination with the photonic integrated circuits (PIC) technology to be a possible method for monolithic integration, in that its fabrication is as powerful as electron beam technology and the cost and time-consuming are almost the same as standard holographic technology.

Width-tunable pulse laser via optical injection induced gain modulation of semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Pan, Honggang; Zhang, Ailing; Tong, Zhengrong; Zhang, Yue; Song, Hongyun; Yao, Yuan

2018-03-01

A width-tunable pulse laser via an optical injection induced gain modulation of a semiconductor optical amplifier (SOA) is demonstrated. When the pump current of the SOA is 330 mA or 400 mA and a continuous wave is injected into the laser cavity with different powers, bright or dark pulses with different pulse widths and frequency repetition rates are obtained. The bright and dark pulses are formed by the effect of gain dispersion and cross-gain modulation of the SOA.

Tailored surface-enhanced Raman nanopillar arrays fabricated by laser-assisted replication for biomolecular detection using organic semiconductor lasers.

PubMed

Liu, Xin; Lebedkin, Sergei; Besser, Heino; Pfleging, Wilhelm; Prinz, Stephan; Wissmann, Markus; Schwab, Patrick M; Nazarenko, Irina; Guttmann, Markus; Kappes, Manfred M; Lemmer, Uli

2015-01-27

Organic semiconductor distributed feedback (DFB) lasers are of interest as external or chip-integrated excitation sources in the visible spectral range for miniaturized Raman-on-chip biomolecular detection systems. However, the inherently limited excitation power of such lasers as well as oftentimes low analyte concentrations requires efficient Raman detection schemes. We present an approach using surface-enhanced Raman scattering (SERS) substrates, which has the potential to significantly improve the sensitivity of on-chip Raman detection systems. Instead of lithographically fabricated Au/Ag-coated periodic nanostructures on Si/SiO2 wafers, which can provide large SERS enhancements but are expensive and time-consuming to fabricate, we use low-cost and large-area SERS substrates made via laser-assisted nanoreplication. These substrates comprise gold-coated cyclic olefin copolymer (COC) nanopillar arrays, which show an estimated SERS enhancement factor of up to ∼ 10(7). The effect of the nanopillar diameter (60-260 nm) and interpillar spacing (10-190 nm) on the local electromagnetic field enhancement is studied by finite-difference-time-domain (FDTD) modeling. The favorable SERS detection capability of this setup is verified by using rhodamine 6G and adenosine as analytes and an organic semiconductor DFB laser with an emission wavelength of 631.4 nm as the external fiber-coupled excitation source.

Semiconductor laser devices having lateral refractive index tailoring

DOEpatents

Ashby, Carol I. H.; Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1990-01-01

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

High-power diode laser versus electrocautery surgery on human papillomavirus lesion treatment.

PubMed

Baeder, Fernando Martins; Santos, Maria Teresa Botti R; Pelino, Jose Eduardo Pelizon; Duarte, Danilo Antonio; Genovese, Walter Joao

2012-05-01

The use of high-power lasers has facilitated and improved human papillomavirus (HPV) treatment protocols and has also become very popular in recent years. This application has been more frequently used in hospitals, especially in gynecology. The present study aimed to evaluate the effects of high-power diode laser to remove oral lesions caused by HPV and the consequent effects on virus load following the wound tissue healing process compared with one of the most conventional surgical techniques involving electrocautery. Surgeries were performed on 5 patients who had 2 distinct lesions caused by HPV. All patients were submitted to both electrocautery and high-power diode laser. Following a 20-day period, when the area was healed, sample material was collected through curettage for virus load quantitative analysis.Observation verified the presence of virus in all the samples; however, surgeries performed with the laser also revealed a significant reduction in virus load per cell compared with those performed with electrocautery. The ease when handling the diode laser, because of the flexibility of its fibers and precision of its energy delivery system, provides high-accuracy surgery, which facilitates the treatment of large and/or multifocal lesions. The use of high-power diode laser is more effective in treatment protocols of lesions caused by HPV.

Broader, flatter optical spectra of passively mode-locked semiconductor lasers for a wavelength-division multiplexing source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eliyahu, Danny; Yariv, Amnon

1997-05-01

Using the time domain master equation for a complex electric-field pulse envelope, we find analytical results for the optical spectra of passively mode-locked semiconductor lasers. The analysis includes the effect of optical nonlinearity of semiconductor lasers, which is characterized by a slow saturable amplifier and absorber. Group velocity dispersion, bandwidth limiting, and self-phase modulation were considered as well. The FWHM of the spectrum profile was found to have a strong dependence on group velocity dispersion and self-phase modulation. For large absolute values of the chirp parameter, the optical spectra result in equispaced continuous wave frequencies, a large fraction of whichmore » have equal power. {copyright} 1997 Optical Society of America« less

Status and future prospects of laser fusion and high power laser applications

NASA Astrophysics Data System (ADS)

Mima, Kunioki

2010-08-01

In Asia, there are many institutes for the R&D of high power laser science and applications. They are 5 major institutes in Japan, 4 major institutes in China, 2 institutes in Korea, and 3 institutes in India. The recent achievements and future prospects of those institutes will be over viewed. In the laser fusion research, the FIREX-I project in Japan has been progressing. The 10kJ short pulse LFEX laser has completed and started the experiments with a single beam. About 1kJ pulse energy will be injected into a cone target. The experimental results of the FIREX experiments will be presented. As the target design for the experiments, a new target, namely, a double cone target was proposed, in which the high energy electrons are well confined and the heating efficiency is significantly improved. Together with the fusion experiments, Osaka University has carried out laboratory astrophysics experiments on photo ionizing plasmas to observe a unique X-ray spectrum from non-LTE plasmas. In 2008, Osaka university has started a new Photon research center in relation with the new program: Consortium for Photon Science and Technology: C-PhoST, in which ultra intense laser plasmas research and related education will be carried out for 10 years. At APRI, JAEA, the fundamental science on the relativistic laser plasmas and the applications of laser particle acceleration has been developed. The application of laser ion acceleration has been investigated on the beam cancer therapy since 2007. In China, The high power glass laser: Shenguan-II and a peta watt beam have been operated to work on radiation hydro dynamics at SIOFM Shanghai. The laser material and optics are developed at SIOFM and LFRC. The IAPCM and the IOP continued the studies on radiation hydrodynamics and on relativistic laser plasmas interactions. At LFRC in China, the construction of Shenguan III glass laser of 200kJ in blue has progressed and will be completed in 2012. Together with the Korean program, I will

Fully utilizing high power diode lasers by synergizing diode laser light sources and beam shaping micro-optics

NASA Astrophysics Data System (ADS)

Fan, Yingmin; Wang, Jingwei; Cai, Lei; Mitra, Thomas; Hauschild, Dirk; Zah, Chung-En; Liu, Xingsheng

2018-02-01

High power diode lasers (HPDLs) offer the highest wall-plug efficiency, highest specific power (power-to-weight ratio), arguably the lowest cost and highest reliability among all laser types. However, the poor beam quality of commercially HPDLs is the main bottleneck limiting their direct applications requiring high brightness at least in one dimension. In order to expand the applications of HPDLs, beam shaping and optical design are essential. In this work, we report the recent progresses on maximizing applications of HPDLs by synergizing diode laser light source and beam shaping micro-optics. Successful examples of matching of diode laser light sources and beam shaping micro-optics driving new applications are presented.

Fiber optic cables for transmission of high-power laser pulses in spaceflight applications

NASA Astrophysics Data System (ADS)

Thomes, W. J.; Ott, M. N.; Chuska, R. F.; Switzer, R. C.; Blair, D. E.

2017-11-01

Lasers with high peak power pulses are commonly used in spaceflight missions for a wide range of applications, from LIDAR systems to optical communications. Due to the high optical power needed, the laser has to be located on the exterior of the satellite or coupled through a series of free space optics. This presents challenges for thermal management, radiation resistance, and mechanical design. Future applications will require multiple lasers located close together, which further complicates the design. Coupling the laser energy into a fiber optic cable allows the laser to be relocated to a more favorable position on the spacecraft. Typical fiber optic termination procedures are not sufficient for injection of these high-power laser pulses without catastrophic damage to the fiber endface. In the current study, we will review the causes of fiber damage during high-power injection and discuss our new manufacturing procedures that overcome these issues to permit fiber use with high reliability in these applications. We will also discuss the proper methods for launching the laser pulses into the fiber to avoid damage and how this is being implemented for current spaceflight missions.

Fiber Optic Cables for Transmission of High-Power Laser Pulses in Spaceflight Applications

NASA Technical Reports Server (NTRS)

Thomes, W. J., Jr.; Ott, M. N.; Chuska, R. F.; Switzer, R. C.; Blair, D. E.

2010-01-01

Lasers with high peak power pulses are commonly used in spaceflight missions for a wide range of applications, from LIDAR systems to optical communications. Due to the high optical power needed, the laser has to be located on the exterior of the satellite or coupled through a series of free space optics. This presents challenges for thermal management, radiation resistance, and mechanical design. Future applications will require multiple lasers located close together, which further complicates the design. Coupling the laser energy into a fiber optic cable allows the laser to be relocated to a more favorable position on the spacecraft. Typical fiber optic termination procedures are not sufficient for injection of these high-power laser pulses without catastrophic damage to the fiber endface. In the current study, we will review the causes of fiber damage during high-power injection and discuss our new manufacturing procedures that overcome these issues to permit fiber use with high reliability in these applications. We will also discuss the proper methods for launching the laser pulses into the fiber to avoid damage and how this is being implemented for current spaceflight missions.

Highly-reliable laser diodes and modules for spaceborne applications

NASA Astrophysics Data System (ADS)

Deichsel, E.

2017-11-01

Laser applications become more and more interesting in contemporary missions such as earth observations or optical communication in space. One of these applications is light detection and ranging (LIDAR), which comprises huge scientific potential in future missions. The Nd:YAG solid-state laser of such a LIDAR system is optically pumped using 808nm emitting pump sources based on semiconductor laser-diodes in quasi-continuous wave (qcw) operation. Therefore reliable and efficient laser diodes with increased output powers are an important requirement for a spaceborne LIDAR-system. In the past, many tests were performed regarding the performance and life-time of such laser-diodes. There were also studies for spaceborne applications, but a test with long operation times at high powers and statistical relevance is pending. Other applications, such as science packages (e.g. Raman-spectroscopy) on planetary rovers require also reliable high-power light sources. Typically fiber-coupled laser diode modules are used for such applications. Besides high reliability and life-time, designs compatible to the harsh environmental conditions must be taken in account. Mechanical loads, such as shock or strong vibration are expected due to take-off or landing procedures. Many temperature cycles with high change rates and differences must be taken in account due to sun-shadow effects in planetary orbits. Cosmic radiation has strong impact on optical components and must also be taken in account. Last, a hermetic sealing must be considered, since vacuum can have disadvantageous effects on optoelectronics components.

Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating.

PubMed

Rickey, Kelly M; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S Venkataprasad; Wu, Yue; Cheng, Gary J; Ruan, Xiulin

2015-11-03

We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~10(5) Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.