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Sample records for hot carrier stress

  1. Correlation of hot-carrier stress and ionization induced degradation in bipolar transistors

    SciTech Connect

    Pease, R.L.; Kosier, S.L.; Schrimpf, R.D.; Combs, W.E.; DeLaus, M.; Fleetwood, D.M.

    1994-03-01

    The correlation of hot carrier stress and ionization induced gain degradation in npn BJTs was studied to determine if hot-carrier stress could be used as a hardness assurance tool for total dose. The correlation was measured at the wafer level and for several hardening variations for a single process technology. Additional experiments are planned and will be presented in the full paper. Based on a detailed physical analysis of the mechanisms for hot-carrier stress and ionization no correlation was expected. The results demonstrated the lack of correlation and indicate that hot-carrier stress degradation is not a predictor of total dose response.

  2. The influences of fluorine and process variations on polysilicon film stress and MOSFET hot carrier effects

    NASA Technical Reports Server (NTRS)

    Lowry, Lynn E.; Macwilliams, Kenneth P.; Isaac, Mary

    1991-01-01

    The use of fluorinated gate oxides may provide an improvement in nMOSFET reliability by enhancing hot carrier resistance. In order to clarify the mechanisms by which polysilicon processing and fluorination influence the oxide behavior, a matrix of nMOSFET structures was prepared using various processing, doping, and implantation strategies. These structures were evaluated for crystalline morphology and chemical element distribution. Mechanical stress measurements were taken on the polysilicon films from room temperature to cryogenic temperature. These examinations showed that fluorination of a structure with randomly oriented polysilicon can reduce residual mechanical stress and improve hot carrier resistance at room temperature.

  3. Evaluation of radiation effects in re-oxidized nitrided oxide devices by hot carrier stressing at 77 K

    NASA Technical Reports Server (NTRS)

    Das, N. C.; Nathan, V.

    1993-01-01

    An attempt has been made to understand the mechanisms of radiation induced degradation by using different types of hot carrier (HC) stressing experiments. The degradation of re-oxidized nitrided oxide gate dielectric due to irradiation and hot carriers are reported. The effect of electron and hole traps of the virgin device on radiation induced threshold voltage shift is discussed.

  4. Examination of hot-carrier stress induced degradation on fin field-effect transistor

    SciTech Connect

    Yang, Yi-Lin Yen, Tzu-Sung; Ku, Chao-Chen; Wu, Tai-Hsuan; Wang, Tzuo-Li; Li, Chien-Yi; Wu, Bing-Tze; Zhang, Wenqi; Hong, Jia-Jian; Wong, Jie-Chen; Yeh, Wen-Kuan; Lin, Shih-Hung

    2014-02-24

    Degradation in fin field-effect transistor devices was investigated in detail under various hot-carrier stress conditions. The threshold voltage (V{sub TH}) shift, substrate current (I{sub B}), and subthreshold swing were extracted to determine the degradation of a device. The power-law time exponent of the V{sub TH} shift was largest at V{sub G} = 0.3 V{sub D}, indicating that the V{sub TH} shift was dominated by interface state generation. Although the strongest impact ionization occurred at V{sub G} = V{sub D}, the V{sub TH} shift was mainly caused by electron trapping resulting from a large gate leakage current.

  5. Trap Profiling Based on Frequency Varied Charge Pumping Method for Hot Carrier Stressed Thin Gate Oxide Metal Oxide Semiconductors Field Effect Transistors.

    PubMed

    Choi, Pyungho; Kim, Hyunjin; Kim, Sangsub; Kim, Soonkon; Javadi, Reza; Park, Hyoungsun; Choi, Byoungdeog

    2016-05-01

    In this study, pulse frequency and reverse bias voltage is modified in charge pumping and advanced technique is presented to extract oxide trap profile in hot carrier stressed thin gate oxide metal oxide semiconductor field effect transistors (MOSFETs). Carrier trapping-detrapping in a gate oxide was analyzed after hot carrier stress and the relationship between trapping depth and frequency was investigated. Hot carrier induced interface traps appears in whole channel area but induced border traps mainly appears in above pinch-off region near drain and gradually decreases toward center of the channel. Thus, hot carrier stress causes interface trap generation in whole channel area while most border trap generation occurs in the drain region under the gate. Ultimately, modified charge pumping method was performed to get trap density distribution of hot carrier stressed MOSFET devices, and the trapping-detrapping mechanism is also analyzed. PMID:27483833

  6. Effect of hot carrier stress on RF reliability of 40 nm PMOSFETs with and without SiGe source/drain

    NASA Astrophysics Data System (ADS)

    Tang, Mao-Chyuan; Fang, Yean-Kuen; Wei, Sun-Chin; Chen, David C.; Yeh, Chune-Sin; Huang-Lu, Shiang

    2008-11-01

    For the first time, the effect of hot carrier stress (HCS) on RF reliability of 40 nm PMOSFETs with and without SiGe source/drain (S/D) was studied in detail. After HCS, the extra SiGe S/D mechanical stress deteriorated the hot carrier reliability more by inducing more defects at the interface between the gate oxide and the extension of S/D. However, the SiGe S/D strain did not change the worst HCS condition and the dependence of fT degradation. The fT is still dominated by gm only, even though the Cgs and Cgd have been changed by the SiGe S/D strain.

  7. Hot-Carrier Seebeck Effect: Diffusion and Remote Detection of Hot Carriers in Graphene.

    PubMed

    Sierra, Juan F; Neumann, Ingmar; Costache, Marius V; Valenzuela, Sergio O

    2015-06-10

    We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical heating, we generate a carrier temperature gradient that results in a measurable thermoelectric voltage V(NL) across the remaining (detector) leads. Due to the nonlocal character of the measurement, V(NL) is exclusively due to the Seebeck effect. Remarkably, a departure from the ordinary relationship between Joule power P and V(NL), V(NL) ∼ P, becomes readily apparent at low temperatures, representing a fingerprint of hot-carrier dominated thermoelectricity. By studying V(NL) as a function of bias, we directly determine the carrier temperature and the characteristic cooling length for hot-carrier propagation, which are key parameters for a variety of new applications that rely on hot-carrier transport. PMID:25950746

  8. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  9. Hot Carrier Extraction with Plasmonic Broadband Absorbers.

    PubMed

    Ng, Charlene; Cadusch, Jasper J; Dligatch, Svetlana; Roberts, Ann; Davis, Timothy J; Mulvaney, Paul; Gómez, Daniel E

    2016-04-26

    Hot charge carrier extraction from metallic nanostructures is a very promising approach for applications in photocatalysis, photovoltaics, and photodetection. One limitation is that many metallic nanostructures support a single plasmon resonance thus restricting the light-to-charge-carrier activity to a spectral band. Here we demonstrate that a monolayer of plasmonic nanoparticles can be assembled on a multistack layered configuration to achieve broadband, near-unit light absorption, which is spatially localized on the nanoparticle layer. We show that this enhanced light absorbance leads to ∼40-fold increases in the photon-to-electron conversion efficiency by the plasmonic nanostructures. We developed a model that successfully captures the essential physics of the plasmonic hot electron charge generation and separation in these structures. This model also allowed us to establish that efficient hot carrier extraction is limited to spectral regions where (i) the photons have energies higher than the Schottky junctions and (ii) the absorption of light is localized on the metal nanoparticles. PMID:26982625

  10. Radiative recombination of hot carriers in narrow-gap semiconductors

    SciTech Connect

    Pavlov, N. V.; Zegrya, G. G.

    2012-01-15

    The mechanism of the radiative recombination of hot carriers in narrow-gap semiconductors is analyzed using the example of indium antimonide. It is shown that the CHCC Auger recombination process may lead to pronounced carrier heating at high excitation levels. The distribution functions and concentrations of hot carriers are determined. The radiative recombination rate of hot carriers and the radiation gain coefficient are calculated in terms of the Kane model. It is demonstrated that the radiative recombination of hot carriers will make a substantial contribution to the total radiative recombination rate at high carrier concentrations.

  11. Plasmon-induced hot carriers in metallic nanoparticles.

    PubMed

    Manjavacas, Alejandro; Liu, Jun G; Kulkarni, Vikram; Nordlander, Peter

    2014-08-26

    Plasmon-induced hot carrier formation is attracting an increasing research interest due to its potential for applications in photocatalysis, photodetection and solar energy harvesting. However, despite very significant experimental effort, a comprehensive theoretical description of the hot carrier generation process is still missing. In this work we develop a theoretical model for the plasmon-induced hot carrier process and apply it to spherical silver nanoparticles and nanoshells. In this model, the conduction electrons of the metal are described as free particles in a finite spherical potential well, and the plasmon-induced hot carrier production is calculated using Fermi’s golden rule. We show that the inclusion of many-body interactions has only a minor influence on the results. Using the model we calculate the rate of hot carrier generation, finding that it closely follows the spectral profile of the plasmon. Our analysis reveals that particle size and hot carrier lifetime play a central role in determining both the production rate and the energy distribution of the hot carriers. Specifically, larger nanoparticle sizes and shorter lifetimes result in higher carrier production rates but smaller energies, and vice versa. We characterize the efficiency of the hot carrier generation process by introducing a figure of merit that measures the number of high energy carriers generated per plasmon. Furthermore, we analyze the spatial distribution and directionality of these excitations. The results presented here contribute to the basic understanding of plasmon-induced hot carrier generation and provide insight for optimization of the process. PMID:24960573

  12. Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

    NASA Astrophysics Data System (ADS)

    Lo, Wen-Hung; Chang, Ting-Chang; Tsai, Jyun-Yu; Dai, Chih-Hao; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung

    2012-04-01

    This letter studies the channel hot carrier stress (CHCS) behaviors on high dielectric constant insulator and metal gate HfO2/TiN p-channel metal-oxide-semiconductor field effect transistors. It can be found that the degradation is associated with electron trapping, resulting in Gm decrease and positive Vth shift. However, Vth under saturation region shows an insignificant degradation during stress. To compare that, the CHC-induced electron trapping induced DIBL is proposed to demonstrate the different behavior of Vth between linear and saturation region. The devices with different channel length are used to evidence the trapping-induced DIBL behavior.

  13. Solar upconversion with plasmonic hot carriers

    NASA Astrophysics Data System (ADS)

    Dionne, Jennifer A.

    Upconversion of sub-bandgap photons is a promising approach to exceed the Shockley-Queisser limit in solar technologies. Placed behind a solar cell, upconverting materials convert lower-energy photons transmitted through the cell to higher-energy above-bandgap photons that can then be absorbed by the cell and contribute to photocurrent. Because the upconverter is electrically isolated from the active cell, it need not be current-matched to the cell, nor will it add mid-gap recombination pathways. Calculations have indicated that single-junction cell efficiencies can exceed 44% upon addition of an upconverter - a significant improvement over the maximum cell efficiency of 30% without an upconverter. However, due to the low quantum efficiencies and narrow absorption bandwidths of existing upconverters, such significant cell improvements have yet to be observed experimentally. In this presentation, we will describe an entirely new solar upconverting scheme based on hot-carrier injection from a plasmonic absorber to an adjacent semiconductor. The plasmonic system both induces upconversion based on injection of hot-electrons and hot-holes and also enhances light-matter interactions. Low-energy photons incident on a plasmonic particle generate hot electrons and hot holes, which are injected into a semiconducting quantum well and subsequently radiatively recombine. Importantly, the bandgap of the quantum well can be higher than the energy of the incident photon, enabling emission of a higher-energy photon than that absorbed. First, we present analytic calculations showing that efficiencies as high as 25% are possible, significantly higher than existing solid-state upconverters, which are only 2-5% efficient. We also describe how further improvements in the efficiency are possible by employing materials and geometries that allow for more efficient carrier injection. Then, we describe experiments on InGaN/GaN quantum wells decorated with Au disks. On their own, the In

  14. Fundamental limitations of hot-carrier solar cells

    NASA Astrophysics Data System (ADS)

    Kirk, A. P.; Fischetti, M. V.

    2012-10-01

    Sunlight-generated hot-carrier transport in strongly absorbing direct band-gap GaAs—among the most optimal of semiconductors for high-efficiency solar cells—is simulated with an accurate full-band structure self-consistent Monte Carlo method, including short- and long-range Coulomb interaction, impact ionization, and optical and acoustic phonon scattering. We consider an ultrapure 100-nm-thick intrinsic GaAs absorber layer designed with quasiballistic carrier transport that achieves complete photon absorption down to the band edge by application of careful light trapping and that has a generous hot-carrier retention time of 10 ps prior to the onset of carrier relaxation. We find that hot-carrier solar cells can be severely limited in performance due to the substantially reduced current density caused by insufficient extraction of the widely distributed hot electrons (holes) through the requisite energy selective contacts.

  15. Current relaxation due to hot carrier scattering in graphene

    NASA Astrophysics Data System (ADS)

    Sun, Dong; Divin, Charles; Mihnev, Momchil; Winzer, Torben; Malic, Ermin; Knorr, Andreas; Sipe, John E.; Berger, Claire; de Heer, Walt A.; First, Phillip N.; Norris, Theodore B.

    2012-10-01

    In this paper, we present direct time-domain investigations of the relaxation of electric currents in graphene due to hot carrier scattering. We use coherent control with ultrashort optical pulses to photoinject a current and detect the terahertz (THz) radiation emitted by the resulting current surge. We pre-inject a background of hot carriers using a separate pump pulse, with a variable delay between the pump and current-injection pulses. We find the effect of the hot carrier background is to reduce the current and hence the emitted THz radiation. The current damping is determined simply by the density (or temperature) of the thermal carriers. The experimental behavior is accurately reproduced in a microscopic theory, which correctly incorporates the nonconservation of velocity in scattering between Dirac fermions. The results indicate that hot carriers are effective in damping the current, and are expected to be important for understanding the operation of high-speed graphene electronic devices.

  16. Plasmon-induced Hot Carriers in Metallic Nanoparticles

    NASA Astrophysics Data System (ADS)

    Liu, Jun; Manjavacas, Alejandro; Kulkarni, Vikram; Nordlander, Peter; LANP Team

    2015-03-01

    Plasmon-induced hot carrier formation is attracting an increasing research interest due to its potential for applications in photocatalysis, photodetection and solar energy harvesting. Here we develop a theoretical model for the plasmon-induced hot carrier process and apply it to spherical silver nanoparticles and nanoshells. We show that the inclusion of many-body interactions has only a minor influence on the results. Using the model we calculate the rate of hot carrier generation, finding that it closely follows the spectral profile of the plasmon. Our analysis reveals that particle size and hot carrier lifetime play a central role in determining both the production rate and the energy distribution of the hot carriers. We characterize the efficiency of the hot carrier generation process by introducing a figure of merit that measures the number of high energy carriers generated per plasmon. Furthermore, we analyze the spatial distribution and directionality of these excitations. A. M. acknowledges financial support from the Welch foundation through the J. Evans Attwell-Welch Postdoctoral Fellowship Program of the Smalley Institute of Rice University (Grant No. L-C-004).

  17. Optoelectronic characterization of carrier extraction in a hot carrier photovoltaic cell structure

    NASA Astrophysics Data System (ADS)

    Dimmock, James A. R.; Kauer, Matthias; Smith, Katherine; Liu, Huiyun; Stavrinou, Paul N.; Ekins-Daukes, Nicholas J.

    2016-07-01

    A hot carrier photovoltaic cell requires extraction of electrons on a timescale faster than they can lose energy to the lattice. We optically and optoelectronically characterize two resonant tunneling structures, showing their compatability with hot carrier photovoltaic operation, demonstrating structural and carrier extraction properties necessary for such a device. In particular we use time resolved and temperature dependent photoluminescence to determine extraction timescales and energy levels in the structures and demonstrate fast carrier extraction by tunneling. We also show that such devices are capable of extracting photo-generated electrons at high carrier densities, with an open circuit voltage in excess of 1 V.

  18. Low-frequency noise in hot-carrier detectors

    NASA Astrophysics Data System (ADS)

    Ivanov, N. I.; Petko, G. V.

    1981-01-01

    The low-frequency noise of hot-carrier detectors has been studied theoretically and experimentallyywith reference to the contributions of each of the following noise sources: thermal noise, shot effect, flicker noise, and noise generated in the input waveguide which is converted to thermoelectromotive force during detection. It is shown that hot-carrier detectors can be used for low-noise detection of electromagnetic radiation in the centimeter and millimeter ranges for various radioelectronic and measurements applications.

  19. Plasmon-induced hot carrier science and technology.

    PubMed

    Brongersma, Mark L; Halas, Naomi J; Nordlander, Peter

    2015-01-01

    The discovery of the photoelectric effect by Heinrich Hertz in 1887 set the foundation for over 125 years of hot carrier science and technology. In the early 1900s it played a critical role in the development of quantum mechanics, but even today the unique properties of these energetic, hot carriers offer new and exciting opportunities for fundamental research and applications. Measurement of the kinetic energy and momentum of photoejected hot electrons can provide valuable information on the electronic structure of materials. The heat generated by hot carriers can be harvested to drive a wide range of physical and chemical processes. Their kinetic energy can be used to harvest solar energy or create sensitive photodetectors and spectrometers. Photoejected charges can also be used to electrically dope two-dimensional materials. Plasmon excitations in metallic nanostructures can be engineered to enhance and provide valuable control over the emission of hot carriers. This Review discusses recent advances in the understanding and application of plasmon-induced hot carrier generation and highlights some of the exciting new directions for the field. PMID:25559968

  20. Plasmon-induced hot carrier science and technology

    NASA Astrophysics Data System (ADS)

    Brongersma, Mark L.; Halas, Naomi J.; Nordlander, Peter

    2015-01-01

    The discovery of the photoelectric effect by Heinrich Hertz in 1887 set the foundation for over 125 years of hot carrier science and technology. In the early 1900s it played a critical role in the development of quantum mechanics, but even today the unique properties of these energetic, hot carriers offer new and exciting opportunities for fundamental research and applications. Measurement of the kinetic energy and momentum of photoejected hot electrons can provide valuable information on the electronic structure of materials. The heat generated by hot carriers can be harvested to drive a wide range of physical and chemical processes. Their kinetic energy can be used to harvest solar energy or create sensitive photodetectors and spectrometers. Photoejected charges can also be used to electrically dope two-dimensional materials. Plasmon excitations in metallic nanostructures can be engineered to enhance and provide valuable control over the emission of hot carriers. This Review discusses recent advances in the understanding and application of plasmon-induced hot carrier generation and highlights some of the exciting new directions for the field.

  1. Plasmonic Hot Carrier Transport and Collection in Nanostructures

    NASA Astrophysics Data System (ADS)

    Jermyn, Adam; Sundararaman, Ravishankar; Narang, Prineha; Goddard, William; Atwater, Harry; Joint CenterArtificial Photosynthesis Collaboration

    2015-03-01

    Plasmonic resonances provide a promising pathway for efficiently capturing photons from solar radiation and improving photo-catalytic activity via hot carrier generation. Previous calculations have provided the prompt energy-momentum distributions of hot carriers, but have left open the question of their transport to collection surfaces [Accepted in Nature Communications]. As the overall efficiency of plasmonic devices is dependent not just on how many carriers are collected but also on their energy distribution, a transport model which tracks this distribution is of key importance. Here, we provide a first-principles model of this transport based upon at the linearized Boltzmann equation with the diffusive and ballistic regimes handled separately, and investigate the role of geometry on plasmonic hot carrier collection.

  2. Hot carrier solar cell absorbers: investigation of carrier cooling properties of candidate materials

    NASA Astrophysics Data System (ADS)

    Conibeer, G.; Shrestha, Santosh; Huang, Shujuan; Patterson, Robert; Xia, Hongze; Feng, Yu; Zhang, Pengfei; Gupta, Neeti; Smyth, Suntrana; Liao, Yuanxun; Lin, Shu; Wang, Pei; Dai, Xi; Chung, Simon; Yang, Jianfeng; Zhang, Yi

    2015-09-01

    The hot carrier cell aims to extract the electrical energy from photo-generated carriers before they thermalize to the band edges. Hence it can potentially achieve a high current and a high voltage and hence very high efficiencies up to 65% under 1 sun and 86% under maximum concentration. To slow the rate of carrier thermalisation is very challenging, but modification of the phonon energies and the use of nanostructures are both promising ways to achieve some of the required slowing of carrier cooling. A number of materials and structures are being investigated with these properties and test structures are being fabricated. Initial measurements indicate slowed carrier cooling in III-Vs with large phonon band gaps and in multiple quantum wells. It is expected that soon proof of concept of hot carrier devices will pave the way for their development to fully functioning high efficiency solar cells.

  3. Fundamental Limitations to Plasmonic Hot-Carrier Solar Cells.

    PubMed

    Zhang, Yu; Yam, ChiYung; Schatz, George C

    2016-05-19

    Detailed balance between photon-absorption and energy loss constrains the efficiency of conventional solar cells to the Shockley-Queisser limit. However, if solar illumination can be absorbed over a wide spectrum by plasmonic structures, and the generated hot-carriers can be collected before relaxation, the efficiency of solar cells may be greatly improved. In this work, we explore the opportunities and limitations for making plasmonic solar cells, here considering a design for hot-carrier solar cells in which a conventional semiconductor heterojunction is attached to a plasmonic medium such as arrays of gold nanoparticles. The underlying mechanisms and fundamental limitations of this cell are studied using a nonequilibrium Green's function method, and the numerical results indicate that this cell can significantly improve the absorption of solar radiation without reducing open-circuit voltage, as photons can be absorbed to produce mobile carriers in the semiconductor as long as they have energy larger than the Schottky barrier rather than above the bandgap. However, a significant fraction of the hot-carriers have energies below the Schottky barrier, which makes the cell suffer low internal quantum efficiency. Moreover, quantum efficiency is also limited by hot-carrier relaxation and metal-semiconductor coupling. The connection of these results to recent experiments is described, showing why plasmonic solar cells can have less than 1% efficiency. PMID:27136049

  4. Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Huang, J.; Alexander-Webber, J. A.; Janssen, T. J. B. M.; Tzalenchuk, A.; Yager, T.; Lara-Avila, S.; Kubatkin, S.; Myers-Ward, R. L.; Wheeler, V. D.; Gaskill, D. K.; Nicholas, R. J.

    2015-04-01

    Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of T4 at carrier temperatures from 1.4 K up to ˜100 K, due to electron-acoustic phonon interactions with a deformation potential coupling constant of 22 eV. A carrier density dependence n_e-1.5 in the scaling of the T4 power law is observed in bilayer graphene, in contrast to the n_e-0.5 dependence in monolayer graphene, leading to a crossover in the energy loss rate as a function of carrier density between these two systems. The electron-phonon relaxation time in bilayer graphene is also shown to be strongly carrier density dependent, while it remains constant for a wide range of carrier densities in monolayer graphene. Our results and comparisons between the bilayer and monolayer exhibit a more comprehensive picture of hot carrier dynamics in graphene systems.

  5. Photon upconversion with hot carriers in plasmonic systems

    SciTech Connect

    Naik, Gururaj V.; Dionne, Jennifer A.

    2015-09-28

    We propose a scheme of photon upconversion based on harnessing the energy of plasmonic hot carriers. Low-energy photons excite hot electrons and hot holes in a plasmonic nanoparticle, which are then injected into an adjacent semiconductor quantum well where they radiatively recombine to emit a photon of higher energy. We theoretically study the proposed upconversion scheme using Fermi-liquid theory and determine the internal quantum efficiency of upconversion to be as high as 25% in 5 nm silver nanocubes. This upconversion scheme is linear in its operation, does not require coherent illumination, offers spectral tunability, and is more efficient than conventional upconverters.

  6. Long-Lived Hot Carriers in III-V Nanowires.

    PubMed

    Tedeschi, D; De Luca, M; Fonseka, H A; Gao, Q; Mura, F; Tan, H H; Rubini, S; Martelli, F; Jagadish, C; Capizzi, M; Polimeni, A

    2016-05-11

    Heat management mechanisms play a pivotal role in driving the design of nanowire (NW)-based devices. In particular, the rate at which charge carriers cool down after an external excitation is crucial for the efficiency of solar cells, lasers, and high-speed transistors. Here, we investigate the thermalization properties of photogenerated carriers by continuous-wave (cw) photoluminescence (PL) in InP and GaAs NWs. A quantitative analysis of the PL spectra recorded up to 310 K shows that carriers can thermalize at a temperature much higher than that of the lattice. We find that the mismatch between carrier and lattice temperature, ΔT, increases exponentially with lattice temperature and depends inversely on the NW diameter. ΔT is instead independent of other NW characteristics, such as crystal structure (wurtzite vs zincblende), chemical composition (InP vs GaAs), shape (tapered vs columnar NWs), and growth method (vapor-liquid-solid vs selective-area growth). Remarkably, carrier temperatures as high as 500 K are reached at the lattice temperature of 310 K in NWs with ∼70 nm diameter. While a population of nonequilibrium carriers, usually referred to as "hot carriers", is routinely generated by high-power laser pulses and detected by ultrafast spectroscopy, it is quite remarkable that it can be observed in cw PL measurements, when a steady-state population of carriers is established. Time-resolved PL measurements show that even in the thinnest NWs carriers have enough time (∼1 ns) after photoexcitation to interact with phonons and thus to release their excess energy. Nevertheless, the inability of carriers to reach a full thermal equilibrium with the lattice points to inhibited phonon emission primarily caused by the large surface-to-volume ratio of small diameter NWs. PMID:27104870

  7. Non-equilibrium hot carrier dynamics in plasmonic nanostructures

    NASA Astrophysics Data System (ADS)

    Narang, Prineha; Sundararaman, Ravishankar; Jermyn, Adam; Cortes, Emiliano; Maier, Stefan A.; Goddard, William A., III

    Decay of surface plasmons to hot carriers is a new direction that has attracted considerable fundamental and application interest, yet a fundamental understanding of ultrafast plasmon decay processes and the underlying microscopic mechanisms remain incomplete. Ultrafast experiments provide insights into the relaxation of non-equilibrium carriers at the tens and hundreds of femtoseconds time scales, but do not yet directly probe shorter times with nanometer spatial resolution. Here we report the first ab initio calculations of non equilibrium transport of plasmonic hot carriers in metals and experimental observation of the injection of these carriers into molecules tethered to the metal surface. Specifically, metallic nanoantennas functionalized with a molecular monolayer allow for the direct probing of electron injection via surface enhanced Raman spectroscopy of the original and reduced molecular species. We combine first principles calculations of electron-electron and electron-phonon scattering rates with Boltzmann transport simulations to predict the ultrafast dynamics and transport of carriers in real materials. We also predict and compare the evolution of electron distributions in ultrafast experiments on noble metal nanoparticles.

  8. On the road toward a hot carrier solar cell

    NASA Astrophysics Data System (ADS)

    Taylor, P. C.; Fields, J. D.; Collins, R. T.

    2015-09-01

    We suggest a new paradigm for solar cells that uses a nanostructured crystalline collector (silicon) in an amorphous absorber matrix (hydrogenated amorphous silicon). Previously amorphous absorbers have received no serious consideration because of their low carrier mobilities. Specifically, we demonstrate that carriers generated in the amorphous region are transported out of this region before losing their energy to heat. This result establishes the possibility of using a wide range of nanostructured amorphous matrices to dramatically increase the efficiencies of solar cells. The use of an amorphous absorber provides a highly desirable and flexible approach to producing low-cost, hot carrier solar cells. Since amorphous materials can be grown over a much wider composition space than crystalline materials, this surprising result greatly broadens the absorbing materials that can be used to dramatically increase the efficiencies of solar cells.

  9. The role of cold carriers and the multiple-carrier process of Si-H bond dissociation for hot-carrier degradation in n- and p-channel LDMOS devices

    NASA Astrophysics Data System (ADS)

    Sharma, Prateek; Tyaginov, Stanislav; Jech, Markus; Wimmer, Yannick; Rudolf, Florian; Enichlmair, Hubert; Park, Jong-Mun; Ceric, Hajdin; Grasser, Tibor

    2016-01-01

    We apply our hot-carrier degradation (HCD) model, which uses the information about the carrier energy distribution, to represent HCD data measured in n- and p-channel LDMOS transistors. In the first version of our model we use the spherical harmonics expansion approach to solve the Boltzmann transport equation (BTE), while in the second version we employ the drift-diffusion scheme. In the latter case the carrier energy distribution function is approximated by an analytic expression with parameters found using the drift-diffusion scheme. The model, which has already been verified with nLDMOS transistors, is used to represent the carrier distribution functions, interface state density profiles, and changes of the drain currents vs. stress time in pLDMOS transistor. Particular attention is paid to study the role of the cold fraction of the carrier ensemble. We check the validity of the model by neglecting the effect of cold carriers in HCD modeling in the case of nLDMOS devices stressed at high voltages. In our model, cold carriers are represented by the corresponding term in the analytic formula for the carrier distribution function as well as by the multiple-carrier process of the Si-H bond dissociation. We show that even in high-voltage devices stressed at high drain voltages the thermalized carriers still have a substantial contribution to HCD.

  10. Velocity Saturation of Hot Carriers in Two-Dimensional Transistors

    NASA Astrophysics Data System (ADS)

    Bird, Jonathan

    Two-dimensional (2D) materials, including graphene and transition-metal dichalcogenides, have emerged in recent years as possible ``channel-replacement'' materials for use in future generations of post-CMOS devices. Realizing the full potential of these materials requires strategies to maximize their current-carrying capacity, while minimizing Joule losses to its environment. A major source of dissipation for hot carriers in any semiconductor is spontaneous optical-phonon emission, resulting in saturation of the drift velocity. In this presentation, I discuss the results of studies of velocity saturation in both graphene and molybdenum-disulphide transistors, emphasizing how this phenomenon impacts resulting transistor operation. While in graphene the large intrinsic optical-phonon energies promise high saturation velocities, experiments to date have revealed a significant degradation of the drift velocity that arises from the loss of energy from hot carriers to the underlying substrate. I discuss here how this problem can be overcome by implementing a strategy of nanosecond electrical pulsing [H. Ramamoorthy et al., Nano Lett., under review], as a means to drive graphene's hot carriers much faster than substrate heating can occur. In this way we achieve saturation velocities that approach the Fermi velocity near the Dirac point, and which exceed those reported for suspended graphene and for devices fabricated on boron nitride substrates. Corresponding current densities reach those found in carbon nanotubes, and in graphene-on-diamond transistors. In this sense we are able to ``free'' graphene from the influence of its substrate, revealing a pathway to achieve the superior electrical performance promised by this material. Velocity saturation is also found to be important for the operation of monolayer molybdenum-disulphide transistors, where it limits the drain current observed in saturation [G. He et al., Nano Lett. 15, 5052 (2015)]. The implications of these

  11. Enhanced Hot-Carrier Luminescence in Multilayer Reduced Graphene Oxide Nanospheres

    PubMed Central

    Chen, Qi; Zhang, Chunfeng; Xue, Fei; Zhou, Yong; Li, Wei; Wang, Ye; Tu, Wenguang; Zou, Zhigang; Wang, Xiaoyong; Xiao, Min

    2013-01-01

    We report a method to promote photoluminescence emission in graphene materials by enhancing carrier scattering instead of directly modifying band structure in multilayer reduced graphene oxide (rGO) nanospheres. We intentionally curl graphene layers to form nanospheres by reducing graphene oxide with spherical polymer templates to manipulate the carrier scattering. These nanospheres produce hot-carrier luminescence with more than ten-fold improvement of emission efficiency as compared to planar nanosheets. With increasing excitation power, hot-carrier luminescence from nanospheres exhibits abnormal spectral redshift with dynamic feature associated to the strengthened electron-phonon coupling. These experimental results can be well understood by considering the screened Coulomb interactions. With increasing carrier density, the reduced screening effect promotes carrier scattering which enhances hot-carrier emission from such multilayer rGO nanospheres. This carrier-scattering scenario is further confirmed by pump-probe measurements. PMID:23897010

  12. Ultrafast Hot Carrier Scattering and Generation from Surface Plasmons in Noble Metals

    NASA Astrophysics Data System (ADS)

    Bernardi, Marco; Mustafa, Jamal; Neaton, Jeffrey B.; Louie, Steven G.

    2015-03-01

    Non-equilibrium ``hot''carriers in materials are challenging to study experimentally as they thermalize at subpicosecond time and nanometer length scale. Recent experiments employed hot carriers generated by light absorption or surface plasmon annihilation in noble metals (e.g., Au and Ag) for catalysis and solar cells. The energy distribution and transport of the generated hot carriers play a key role in these experiments. We present ab initio calculations of the energy distribution of hot carriers generated by surface plasmons in noble metals, and the relaxation time and mean free path of the hot carriers along different crystal directions within 5 eV of the Fermi energy. Our calculations show the interplay of the noble metal s and d bands in determining the damping rate of the plasmon and the mean free path of the hot carriers. The trends we find as a function of surface plasmon momentum and frequency allow us to define optimal experimental conditions for hot carrier generation and extraction. Our approach combines density functional theory, GW, and electron-phonon calculations. Our work provides microscopic insight into hot carriers in noble metals, and their ultrafast dynamics in the presence of surface plasmons.

  13. Reversible electron-hole separation in a hot carrier solar cell

    NASA Astrophysics Data System (ADS)

    Limpert, S.; Bremner, S.; Linke, H.

    2015-09-01

    Hot-carrier solar cells are envisioned to utilize energy filtering to extract power from photogenerated electron-hole pairs before they thermalize with the lattice, and thus potentially offer higher power conversion efficiency compared to conventional, single absorber solar cells. The efficiency of hot-carrier solar cells can be expected to strongly depend on the details of the energy filtering process, a relationship which to date has not been satisfactorily explored. Here, we establish the conditions under which electron-hole separation in hot-carrier solar cells can occur reversibly, that is, at maximum energy conversion efficiency. We thus focus our analysis on the internal operation of the hot-carrier solar cell itself, and in this work do not consider the photon-mediated coupling to the Sun. After deriving an expression for the voltage of a hot-carrier solar cell valid under conditions of both reversible and irreversible electrical operation, we identify separate contributions to the voltage from the thermoelectric effect and the photovoltaic effect. We find that, under specific conditions, the energy conversion efficiency of a hot-carrier solar cell can exceed the Carnot limit set by the intra-device temperature gradient alone, due to the additional contribution of the quasi-Fermi level splitting in the absorber. We also establish that the open-circuit voltage of a hot-carrier solar cell is not limited by the band gap of the absorber, due to the additional thermoelectric contribution to the voltage. Additionally, we find that a hot-carrier solar cell can be operated in reverse as a thermally driven solid-state light emitter. Our results help explore the fundamental limitations of hot-carrier solar cells, and provide a first step towards providing experimentalists with a guide to the optimal configuration of devices.

  14. Plasmonic hot carrier dynamics in solid-state and chemical systems for energy conversion

    NASA Astrophysics Data System (ADS)

    Narang, Prineha; Sundararaman, Ravishankar; Atwater, Harry A.

    2016-06-01

    Surface plasmons provide a pathway to efficiently absorb and confine light in metallic nanostructures, thereby bridging photonics to the nano scale. The decay of surface plasmons generates energetic `hot' carriers, which can drive chemical reactions or be injected into semiconductors for nano-scale photochemical or photovoltaic energy conversion. Novel plasmonic hot carrier devices and architectures continue to be demonstrated, but the complexity of the underlying processes make a complete microscopic understanding of all the mechanisms and design considerations for such devices extremely challenging.Here,we review the theoretical and computational efforts to understand and model plasmonic hot carrier devices.We split the problem into three steps: hot carrier generation, transport and collection, and review theoretical approaches with the appropriate level of detail for each step along with their predictions.We identify the key advances necessary to complete the microscopic mechanistic picture and facilitate the design of the next generation of devices and materials for plasmonic energy conversion.

  15. Theoretical predictions for hot-carrier generation from surface plasmon decay

    PubMed Central

    Sundararaman, Ravishankar; Narang, Prineha; Jermyn, Adam S.; Goddard III, William A.; Atwater, Harry A.

    2014-01-01

    Decay of surface plasmons to hot carriers finds a wide variety of applications in energy conversion, photocatalysis and photodetection. However, a detailed theoretical description of plasmonic hot-carrier generation in real materials has remained incomplete. Here we report predictions for the prompt distributions of excited ‘hot’ electrons and holes generated by plasmon decay, before inelastic relaxation, using a quantized plasmon model with detailed electronic structure. We find that carrier energy distributions are sensitive to the electronic band structure of the metal: gold and copper produce holes hotter than electrons by 1–2 eV, while silver and aluminium distribute energies more equitably between electrons and holes. Momentum-direction distributions for hot carriers are anisotropic, dominated by the plasmon polarization for aluminium and by the crystal orientation for noble metals. We show that in thin metallic films intraband transitions can alter the carrier distributions, producing hotter electrons in gold, but interband transitions remain dominant. PMID:25511713

  16. Incorporating mesh-insensitive structural stress into the fatigue assessment procedure of common structural rules for bulk carriers

    NASA Astrophysics Data System (ADS)

    Kim, Seong-Min; Kim, Myung-Hyun

    2015-01-01

    This study introduces a fatigue assessment procedure using mesh-insensitive structural stress method based on the Common Structural Rules for Bulk Carriers by considering important factors, such as mean stress and thickness effects. The fatigue assessment result of mesh-insensitive structural stress method have been compared with CSR procedure based on equivalent notch stress at major hot spot points in the area near the ballast hold for a 180 K bulk carrier. The possibility of implementing mesh-insensitive structural stress method in the fatigue assessment procedure for ship structures is discussed.

  17. Ab Initio Study of Hot Carriers in the First Picosecond after Sunlight Absorption in Silicon

    NASA Astrophysics Data System (ADS)

    Bernardi, Marco; Vigil-Fowler, Derek; Lischner, Johannes; Neaton, Jeffrey B.; Louie, Steven G.

    2014-06-01

    Hot carrier thermalization is a major source of efficiency loss in solar cells. Because of the subpicosecond time scale and complex physics involved, a microscopic characterization of hot carriers is challenging even for the simplest materials. We develop and apply an ab initio approach based on density functional theory and many-body perturbation theory to investigate hot carriers in semiconductors. Our calculations include electron-electron and electron-phonon interactions, and require no experimental input other than the structure of the material. We apply our approach to study the relaxation time and mean free path of hot carriers in Si, and map the band and k dependence of these quantities. We demonstrate that a hot carrier distribution characteristic of Si under solar illumination thermalizes within 350 fs, in excellent agreement with pump-probe experiments. Our work sheds light on the subpicosecond time scale after sunlight absorption in Si, and constitutes a first step towards ab initio quantification of hot carrier dynamics in materials.

  18. Semiconductor-free hot carrier devices for energy harvesting and photodetection

    NASA Astrophysics Data System (ADS)

    Gong, Tao; Munday, Jeremy

    The maximum efficiency for a single-junction solar cell is around 30% by the Shockley-Queisser (SQ) limit. The energy loss is typically through a thermalization process between the excited high-energy carriers, e.g. hot carriers, and the lattice. Therefore, the collection of the hot carriers before thermalization would allow for reduced power loss. Recently, photodetectors based on metal-semiconductor Schottky junctions have been exploiting hot electron effects to allow sub-bandgap absorption and hence show promise as near IR wavelength detectors. Here we present a simple, semiconductor-free hot carrier device based on transparent conducting oxides (TCO) electrodes. We experimentally demonstrate the hot carrier generation and extraction under monochromatic and broadband light illumination of normal and oblique incidence. Under optimized conditions, a power conversion efficiency >10% is predicted for high-energy photon excitation. The performance of the device shows further improvement by employing nanostructures, which couple the incident light into surface plasmons, leading to absorption enhancement. This semiconductor-free device provides an alternative way of energy harvesting and photodetection.

  19. Study of LO-phonon decay in semiconductors for hot carrier solar cell

    NASA Astrophysics Data System (ADS)

    Levard, Hugo; Vidal, Julien; Laribi, Sana; Guillemoles, Jean-François

    2014-03-01

    Knowledge of phonon decay is of crucial importance when studying basic properties of semiconductors, since they are closely related to Raman linewidth and non-equilibrium-hot-carriers cooling. The latter indeed cools down to the bottom of the conduction band within a picosecond range because of electron-phonon interaction. The eventual emitted hot phonons then decay in few picoseconds. The hot carriers cooling can be slowed down by considering the decay rate dependence of phonon on conservation rules, whose tuning may reduce the allowed two-phonon final states density. This is of direct interest for the third generation photovoltaic devices that are Hot Carrier Solar Cells (HCSC), in which the photoexcited carriers are extracted at an energy higher than thermal equilibrium. One of the HCSC main challenges then is to find an absorber material in which the hot phonons has a relaxation time longer than the carriers cooling time, so that we can expect the electron to ``reabsorb'' a phonon, slowing down the electronic cooling. HCSC yield is ultimately limited by LO phonon decay, though. In this work, we present theoretical results obtained from ab initio calculations of phonon lifetime in III-V and IV-IV semiconductors through a three-phonon process. Common approximations in the literature are questioned. In particular, we show that the usual ``zone-center approximation'' is not valid in some specific semiconductors. The analysis allows to correctly investigate phonon decay mechanisms in bulk and nanostructured materials.

  20. Reversible electron-hole separation in a hot carrier solar cell

    NASA Astrophysics Data System (ADS)

    Linke, Heiner

    Hot-carrier solar cells are envisioned to utilize energy filtering to extract power from photogenerated electron-hole pairs before they thermalize with the lattice, and thus potentially offer higher power conversion efficiency compared to conventional, single absorber solar cells. The efficiency of hot-carrier solar cells can be expected to strongly depend on the details of the energy filtering process, a relationship which to date has not been satisfactorily explored. Here, we establish the conditions under which electron-hole separation in hot-carrier solar cells can occur reversibly, that is, at maximum energy conversion efficiency. We find that, under specific conditions, the energy conversion efficiency of a hot-carrier solar cell can exceed the Carnot limit set by the intra-device temperature gradient alone, due to the additional contribution of the quasi-Fermi level splitting in the absorber. To achieve this, we consider a highly selective energy filter such as a quantum dot embedded into a one-dimensional conductor. We also establish that the open-circuit voltage of a hot-carrier solar cell is not limited by the band gap of the absorber, due to the additional thermoelectric contribution to the voltage. Additionally, we find that a hot-carrier solar cell can be operated in reverse as a thermally driven solid-state light emitter. In addition this theoretical analysis, I will also report on first experimental results in a nanowire-based energy filter device. Ref: S Limpert, S Bremner, and H Linke, New J. Phys 17, 095004 (2015)

  1. Experimental demonstration of hot-carrier photo-current in an InGaAs quantum well solar cell

    SciTech Connect

    Hirst, L. C.; Walters, R. J.; Führer, M. F.; Ekins-Daukes, N. J.

    2014-06-09

    An unambiguous observation of hot-carrier photocurrent from an InGaAs single quantum well solar cell is reported. Simultaneous photo-current and photoluminescence measurements were performed for incident power density 0.04–3 kW cm{sup −2}, lattice temperature 10 K, and forward bias 1.2 V. An order of magnitude photocurrent increase was observed for non-equilibrium hot-carrier temperatures >35 K. This photocurrent activation temperature is consistent with that of equilibrium carriers in a lattice at elevated temperature. The observed hot-carrier photo-current is extracted from the well over an energy selective GaAs barrier, thus integrating two essential components of a hot-carrier solar cell: a hot-carrier absorber and an energy selective contact.

  2. Hot-carrier cooling and photoinduced refractive index changes in organic-inorganic lead halide perovskites.

    PubMed

    Price, Michael B; Butkus, Justinas; Jellicoe, Tom C; Sadhanala, Aditya; Briane, Anouk; Halpert, Jonathan E; Broch, Katharina; Hodgkiss, Justin M; Friend, Richard H; Deschler, Felix

    2015-01-01

    Metal-halide perovskites are at the frontier of optoelectronic research due to solution processability and excellent semiconductor properties. Here we use transient absorption spectroscopy to study hot-carrier distributions in CH3NH3PbI3 and quantify key semiconductor parameters. Above bandgap, non-resonant excitation creates quasi-thermalized carrier distributions within 100 fs. During carrier cooling, a sub-bandgap transient absorption signal arises at ∼ 1.6 eV, which is explained by the interplay of bandgap renormalization and hot-carrier distributions. At higher excitation densities, a 'phonon bottleneck' substantially slows carrier cooling. This effect indicates a low contribution from inelastic carrier-impurity or phonon-impurity scattering in these polycrystalline materials, which supports high charge-carrier mobilities. Photoinduced reflectivity changes distort the shape of transient absorption spectra and must be included to extract physical constants. Using a simple band-filling model that accounts for these changes, we determine a small effective mass of mr=0.14 mo, which agrees with band structure calculations and high photovoltaic performance. PMID:26404048

  3. Hot-carrier cooling and photoinduced refractive index changes in organic-inorganic lead halide perovskites

    NASA Astrophysics Data System (ADS)

    Price, Michael B.; Butkus, Justinas; Jellicoe, Tom C.; Sadhanala, Aditya; Briane, Anouk; Halpert, Jonathan E.; Broch, Katharina; Hodgkiss, Justin M.; Friend, Richard H.; Deschler, Felix

    2015-09-01

    Metal-halide perovskites are at the frontier of optoelectronic research due to solution processability and excellent semiconductor properties. Here we use transient absorption spectroscopy to study hot-carrier distributions in CH3NH3PbI3 and quantify key semiconductor parameters. Above bandgap, non-resonant excitation creates quasi-thermalized carrier distributions within 100 fs. During carrier cooling, a sub-bandgap transient absorption signal arises at ~1.6 eV, which is explained by the interplay of bandgap renormalization and hot-carrier distributions. At higher excitation densities, a `phonon bottleneck' substantially slows carrier cooling. This effect indicates a low contribution from inelastic carrier-impurity or phonon-impurity scattering in these polycrystalline materials, which supports high charge-carrier mobilities. Photoinduced reflectivity changes distort the shape of transient absorption spectra and must be included to extract physical constants. Using a simple band-filling model that accounts for these changes, we determine a small effective mass of mr=0.14 mo, which agrees with band structure calculations and high photovoltaic performance.

  4. Hot-carrier cooling and photoinduced refractive index changes in organic–inorganic lead halide perovskites

    PubMed Central

    Price, Michael B.; Butkus, Justinas; Jellicoe, Tom C.; Sadhanala, Aditya; Briane, Anouk; Halpert, Jonathan E.; Broch, Katharina; Hodgkiss, Justin M.; Friend, Richard H.; Deschler, Felix

    2015-01-01

    Metal-halide perovskites are at the frontier of optoelectronic research due to solution processability and excellent semiconductor properties. Here we use transient absorption spectroscopy to study hot-carrier distributions in CH3NH3PbI3 and quantify key semiconductor parameters. Above bandgap, non-resonant excitation creates quasi-thermalized carrier distributions within 100 fs. During carrier cooling, a sub-bandgap transient absorption signal arises at ∼1.6 eV, which is explained by the interplay of bandgap renormalization and hot-carrier distributions. At higher excitation densities, a ‘phonon bottleneck' substantially slows carrier cooling. This effect indicates a low contribution from inelastic carrier-impurity or phonon–impurity scattering in these polycrystalline materials, which supports high charge-carrier mobilities. Photoinduced reflectivity changes distort the shape of transient absorption spectra and must be included to extract physical constants. Using a simple band-filling model that accounts for these changes, we determine a small effective mass of mr=0.14 mo, which agrees with band structure calculations and high photovoltaic performance. PMID:26404048

  5. Hot Carrier Degradation in Deep Sub-Micron Nitride Spacer Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Transistors

    NASA Astrophysics Data System (ADS)

    Tsai, Jun-lin; Huang, Kai-ye; Lai, Jinn-horng; Gong, Jeng; Yang, Fu-Jei; Lin, Sun-Yun

    2002-08-01

    Spacer bottom oxide in the nitride spacer lightly doped drain (LDD) device, which is used to prevent huge interfacial states between the nitride and silicon interface, plays an important role in the hot carrier test. Because of the stress due to atomic size mismatch between the nitride spacer and silicon, trap-assisted hot electron tunneling is more significant in a nitride spacer LDD device than in the oxide spacer counterpart. A thicker bottom oxide can eliminate this effect. However, the optimal thickness of the nitride spacer bottom oxide should be varied for different poly-silicon gate structures. The hot carrier stress in a nitride spacer LDD device causes multi-stage degradation under Isub,max stress. It is dominated by electron trapping at the early stage, interfacial state (Nit) creation at the second stage, and self-limiting hot carrier degradation at the final stage. The degradation for Ig,max stress in nitride spacer LDD devices is mostly caused by electrons trapped in the nitride/oxide interface.

  6. Spatially dispersive dynamical response of hot carriers in doped graphene

    NASA Astrophysics Data System (ADS)

    Kukhtaruk, S. M.; Kochelap, V. A.; Sokolov, V. N.; Kim, K. W.

    2016-05-01

    We study theoretically wave-vector and frequency dispersion of the complex dynamic conductivity tensor (DCT), σlm(k , ω), of doped monolayer graphene under a strong dc electric field. For a general analysis, we consider the weak ac field of arbitrary configuration given by two independent vectors, the ac field polarization and the wave vector k. The high-field transport and linear response to the ac field are described on the base of the Boltzmann kinetic equation. We show that the real part of DCT, calculated in the collisionless regime, is not zero due to dissipation of the ac wave, whose energy is absorbed by the resonant Dirac quasiparticles effectively interacting with the wave. The role of the kinematic resonance at ω =vF | k | (vF is the Fermi velocity) is studied in detail taking into account deviation from the linear energy spectrum and screening by the charge carriers. The isopower-density curves and distributions of angle between the ac current density and field vectors are presented as a map which provides clear graphic representation of the DCT anisotropy. Also, the map shows certain ac field configurations corresponding to a negative power density, thereby it indicates regions of terahertz frequency for possible electrical (drift) instability in the graphene system.

  7. Plasmonic hot carrier dynamics in solid-state and chemical systems for energy conversion

    DOE PAGESBeta

    Narang, Prineha; Sundararaman, Ravishankar; Atwater, Harry A.

    2016-06-11

    Surface plasmons provide a pathway to efficiently absorb and confine light in metallic nanostructures, thereby bridging photonics to the nano scale. The decay of surface plasmons generates energetic ‘hot’ carriers, which can drive chemical reactions or be injected into semiconductors for nano-scale photochemical or photovoltaic energy conversion. Novel plasmonic hot carrier devices and architectures continue to be demonstrated, but the complexity of the underlying processes make a complete microscopic understanding of all the mechanisms and design considerations for such devices extremely challenging.Here,we review the theoretical and computational efforts to understand and model plasmonic hot carrier devices.We split the problem intomore » three steps: hot carrier generation, transport and collection, and review theoretical approaches with the appropriate level of detail for each step along with their predictions. As a result, we identify the key advances necessary to complete the microscopic mechanistic picture and facilitate the design of the next generation of devices and materials for plasmonic energy conversion.« less

  8. Nonradiative Plasmon Decay and Hot Carrier Dynamics: Effects of Phonons, Surfaces, and Geometry.

    PubMed

    Brown, Ana M; Sundararaman, Ravishankar; Narang, Prineha; Goddard, William A; Atwater, Harry A

    2016-01-26

    The behavior of metals across a broad frequency range from microwave to ultraviolet frequencies is of interest in plasmonics, nanophotonics, and metamaterials. Depending on the frequency, losses of collective excitations in metals can be predominantly classical resistive effects or Landau damping. In this context, we present first-principles calculations that capture all of the significant microscopic mechanisms underlying surface plasmon decay and predict the initial excited carrier distributions so generated. Specifically, we include ab initio predictions of phonon-assisted optical excitations in metals, which are critical to bridging the frequency range between resistive losses at low frequencies and direct interband transitions at high frequencies. In the commonly used plasmonic materials, gold, silver, copper, and aluminum, we find that resistive losses compete with phonon-assisted carrier generation below the interband threshold, but hot carrier generation via direct transitions dominates above threshold. Finally, we predict energy-dependent lifetimes and mean free paths of hot carriers, accounting for electron-electron and electron-phonon scattering, to provide insight toward transport of plasmonically generated carriers at the nanoscale. PMID:26654729

  9. Effects of Hot Carriers on DC and RF Performances of Deep Submicron p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Various Oxide Layer Thicknesses

    NASA Astrophysics Data System (ADS)

    Tang, Mao-Chyuan; Fang, Yean-Kuen; Liao, Wen-Shiang; Chen, David C.; Yeh, Chune-Sin; Chien, Shan-Chieh

    2008-04-01

    In this work, the effects of hot carriers on the DC and RF performances of 45 nm p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) with various oxide layer thicknesses were investigated in detail by RF automatic measurements. It was found that a PMOSFET with a thinner oxide layer suffers more serious damage from hot carriers than that with a thicker oxide layer. Also, the greatest degradation occurs at the bias condition when gate stress voltage Vgstr is equal to drain stress voltage Vdstr, and it was found that the degradation of the cutoff frequency fT is dependent on transconductance gm only. This is different from conventional long-channel devices, in which the greatest degradation takes place at Vgstr = Vdstr/2 and when fT is dependent on both gm and the total gate capacitance Cgg (=Cgs+Cgd).

  10. Ultrafast Carrier Dynamics and Hot Electron Extraction in Tetrapod-Shaped CdSe Nanocrystals.

    PubMed

    Jing, Pengtao; Ji, Wenyu; Yuan, Xi; Qu, Songnan; Xie, Renguo; Ikezawa, Michio; Zhao, Jialong; Li, Haibo; Masumoto, Yasuaki

    2015-04-22

    The ultrafast carrier dynamics and hot electron extraction in tetrapod-shaped CdSe nanocrystals was studied by femtosecond transient absorption (TA) spectroscopy. The carriers relaxation process from the higher electronic states (CB2, CB3(2), and CB4) to the lowest electronic state (CB1) was demonstrated to have a time constant of 1.04 ps, resulting from the spatial electron transfer from arms to a core. The lowest electronic state in the central core exhibited a long decay time of 5.07 ns in agreement with the reported theoretical calculation. The state filling mechanism and Coulomb blockade effect in the CdSe tetrapod were clearly observed in the pump-fluence-dependent transient absorption spectra. Hot electrons were transferred from arm states into the electron acceptor molecules before relaxation into core states. PMID:25838148

  11. Probing charge transfer and hot carrier dynamics in organic solar cells with terahertz spectroscopy

    NASA Astrophysics Data System (ADS)

    Cunningham, Paul D.; Lane, Paul A.; Melinger, Joseph S.; Esenturk, Okan; Heilweil, Edwin J.

    2016-04-01

    Time-resolved terahertz spectroscopy (TRTS) was used to explore charge generation, transfer, and the role of hot carriers in organic solar cell materials. Two model molecular photovoltaic systems were investigated: with zinc phthalocyanine (ZnPc) or alpha-sexathiophene (α-6T) as the electron donors and buckminsterfullerene (C60) as the electron acceptor. TRTS provides charge carrier conductivity dynamics comprised of changes in both population and mobility. By using time-resolved optical spectroscopy in conjunction with TRTS, these two contributions can be disentangled. The sub-picosecond photo-induced conductivity decay dynamics of C60 were revealed to be caused by auto-ionization: the intrinsic process by which charge is generated in molecular solids. In donor-acceptor blends, the long-lived photo-induced conductivity is used for weight fraction optimization of the constituents. In nanoscale multilayer films, the photo-induced conductivity identifies optimal layer thicknesses. In films of ZnPc/C60, electron transfer from ZnPc yields hot charges that localize and become less mobile as they thermalize. Excitation of high-lying Franck Condon states in C60 followed by hole-transfer to ZnPc similarly produces hot charge carriers that self-localize; charge transfer clearly precedes carrier cooling. This picture is contrasted to charge transfer in α-6T/C60, where hole transfer takes place from a thermalized state and produces equilibrium carriers that do not show characteristic signs of cooling and self-localization. These results illustrate the value of terahertz spectroscopic methods for probing charge transfer reactions.

  12. Ultrafast Lateral Photo-Dember Effect in Graphene Induced by Nonequilibrium Hot Carrier Dynamics.

    PubMed

    Liu, Chang-Hua; Chang, You-Chia; Lee, Seunghyun; Zhang, Yaozhong; Zhang, Yafei; Norris, Theodore B; Zhong, Zhaohui

    2015-06-10

    The photo-Dember effect arises from the asymmetric diffusivity of photoexcited electrons and holes, which creates a transient spatial charge distribution and hence the buildup of a voltage. Conventionally, a strong photo-Dember effect is only observed in semiconductors with a large asymmetry between the electron and hole mobilities, such as in GaAs or InAs, and is considered negligible in graphene due to its electron-hole symmetry. Here, we report the observation of a strong lateral photo-Dember effect induced by nonequilibrium hot carrier dynamics when exciting a graphene-metal interface with a femtosecond laser. Scanning photocurrent measurements reveal the extraction of photoexcited hot carriers is driven by the transient photo-Dember field, and the polarity of the photocurrent is determined by the device's mobility asymmetry. Furthermore, ultrafast pump-probe measurements indicate the magnitude of photocurrent is related to the hot carrier cooling rate. Our simulations also suggest that the lateral photo-Dember effect originates from graphene's 2D nature combined with its unique electrical and optical properties. Taken together, these results not only reveal a new ultrafast photocurrent generation mechanism in graphene but also suggest new types of terahertz sources based on 2D nanomaterials. PMID:25993273

  13. Experimental evidence of hot carriers solar cell operation in multi-quantum wells heterostructures

    SciTech Connect

    Rodière, Jean; Lombez, Laurent; Le Corre, Alain; Durand, Olivier; Guillemoles, Jean-François

    2015-05-04

    We investigated a semiconductor heterostructure based on InGaAsP multi quantum wells (QWs) using optical characterizations and demonstrate its potential to work as a hot carrier cell absorber. By analyzing photoluminescence spectra, the quasi Fermi level splitting Δμ and the carrier temperature are quantitatively measured as a function of the excitation power. Moreover, both thermodynamics values are measured at the QWs and the barrier emission energy. High values of Δμ are found for both transition, and high carrier temperature values in the QWs. Remarkably, the quasi Fermi level splitting measured at the barrier energy exceeds the absorption threshold of the QWs. This indicates a working condition beyond the classical Shockley-Queisser limit.

  14. First principles theory for surface plasmon generation and decay to hot carriers

    NASA Astrophysics Data System (ADS)

    Sundararaman, Ravishankar; Narang, Prineha; Jermyn, Adam; Atwater, Harry A.; Goddard, William A., III

    2014-03-01

    Plasmonic resonances provide a promising pathway for efficiently capturing infrared photons from solar radiation and boosting photo-catalytic activity via local temperature enhancements and hot carrier generation. Previous calculations of plasmon decay to excited carriers employing a fully quantized model Hamiltonian [2] indicate strong plasmon polarization dependence and momentum anisotropy of the generated carriers, in contrast with classical theories. An accurate first principles calculation for this process must account for microscopic details at the atomic scale for the electronic states as well as the effect of the 10-100 nm length scale particle and antennae geometries on the plasmon resonances. Here, we present a first-principles multi-scale model of plasmonics combining electronic density-functional theory with electromagnetic models on longer length-scales, and investigate the role of electronic structure and geometry on plasmonic light absorption, decay and hot carrier generation. This material is based upon work performed by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award Number DE-SC0004993.

  15. Valley-Coherent Hot Carriers and Thermal Relaxation in Monolayer Transition Metal Dichalcogenides.

    PubMed

    Kallatt, Sangeeth; Umesh, Govindarao; Majumdar, Kausik

    2016-06-01

    We show room-temperature valley coherence in MoS2, MoSe2, WS2, and WSe2 monolayers using linear polarization-resolved hot photoluminescence (PL) at energies close to the excitation, demonstrating preservation of valley coherence before sufficient scattering events. The features of the copolarized hot luminescence allow us to extract the lower bound of the binding energy of the A exciton in monolayer MoS2 as 0.42 (±0.02) eV. The broadening of the PL peak is found to be dominated by a Boltzmann-type hot luminescence tail, and using the slope of the exponential decay, the carrier temperature is extracted in situ at different stages of energy relaxation. The temperature of the emitted optical phonons during the relaxation process is probed by exploiting the corresponding broadening of the Raman peaks due to temperature-induced anharmonic effects. The findings provide a physical picture of photogeneration of valley-coherent hot carriers and their subsequent energy relaxation pathways. PMID:27194380

  16. On the limits of applicability of drift-diffusion based hot carrier degradation modeling

    NASA Astrophysics Data System (ADS)

    Jech, Markus; Sharma, Prateek; Tyaginov, Stanislav; Rudolf, Florian; Grasser, Tibor

    2016-04-01

    We study the limits of the applicability of a drift-diffusion (DD) based model for hot-carrier degradation (HCD). In this approach the rigorous but computationally expensive solution of the Boltzmann transport equation is replaced by an analytic expression for the carrier energy distribution function. On the one hand, we already showed that the simplified version of our HCD model is quite successful for LDMOS devices. On the other hand, hot carrier degradation models based on the drift-diffusion and energy transport schemes were shown to fail for planar MOSFETs with gate lengths of 0.5-2.0 µm. To investigate the limits of validity of the DD-based HCD model, we use planar nMOSFETs of an identical topology but with different gate lengths of 2.0, 1.5, and 1.0 µm. We show that, although the model is able to adequately represent the linear and saturation drain current changes in the 2.0 µm transistor, it starts to fail for gate lengths shorter than 1.5 µm and becomes completely inadequate for the 1.0 µm device.

  17. Extracting the temperature of hot carriers in time- and angle-resolved photoemission

    SciTech Connect

    Ulstrup, Søren; Hofmann, Philip; Johannsen, Jens Christian; Grioni, Marco

    2014-01-15

    The interaction of light with a material's electronic system creates an out-of-equilibrium (non-thermal) distribution of optically excited electrons. Non-equilibrium dynamics relaxes this distribution on an ultrafast timescale to a hot Fermi-Dirac distribution with a well-defined temperature. The advent of time- and angle-resolved photoemission spectroscopy (TR-ARPES) experiments has made it possible to track the decay of the temperature of the excited hot electrons in selected states in the Brillouin zone, and to reveal their cooling in unprecedented detail in a variety of emerging materials. It is, however, not a straightforward task to determine the temperature with high accuracy. This is mainly attributable to an a priori unknown position of the Fermi level and the fact that the shape of the Fermi edge can be severely perturbed when the state in question is crossing the Fermi energy. Here, we introduce a method that circumvents these difficulties and accurately extracts both the temperature and the position of the Fermi level for a hot carrier distribution by tracking the occupation statistics of the carriers measured in a TR-ARPES experiment.

  18. Hot Carrier-Induced Tautomerization within a Single Porphycene Molecule on Cu(111).

    PubMed

    Ladenthin, Janina N; Grill, Leonhard; Gawinkowski, Sylwester; Liu, Shuyi; Waluk, Jacek; Kumagai, Takashi

    2015-07-28

    Here, we report the study of tautomerization within a single porphycene molecule adsorbed on a Cu(111) surface using low-temperature scanning tunneling microscopy (STM) at 5 K. While molecules are adsorbed on the surface exclusively in the thermodynamically stable trans tautomer after deposition, a voltage pulse from the STM can induce the unidirectional trans → cis and reversible cis ↔ cis tautomerization. From the voltage and current dependence of the tautomerization yield (rate), it is revealed that the process is induced by vibrational excitation via inelastic electron tunneling. However, the metastable cis molecules are thermally switched back to the trans tautomer by heating the surface up to 30 K. Furthermore, we have found that the unidirectional tautomerization can be remotely controlled at a distance from the STM tip. By analyzing the nonlocal process in dependence on various experimental parameters, a hot carrier-mediated mechanism is identified, in which hot electrons (holes) generated by the STM travel along the surface and induce the tautomerization through inelastic scattering with a molecule. The bias voltage and coverage dependent rate of the nonlocal tautomerization clearly show a significant contribution of the Cu(111) surface state to the hot carrier-induced process. PMID:26057840

  19. Scanning internal photoemission microscopy for the identification of hot carrier transport mechanisms

    NASA Astrophysics Data System (ADS)

    Differt, D.; Pfeiffer, W.; Diesing, D.

    2012-09-01

    Linear and nonlinear internal photoemission in a thin-film metal-insulator-metal heterosystem, i.e., a Ta-TaOx-Ag junction, together with surface reflectivity are mapped with a lateral resolution of better than 5 μm. The spatial correlation of the different signals and time-resolved internal photoemission spectroscopy reveal excitation mechanisms and ballistic hot carrier injection. The internal photoemission yield variation with Ag layer thickness is quantitatively explained by above-barrier injection. The hot-spot-like behavior of the two-photon induced internal photoemission observed for short pulse excitation is attributed to local field enhancements because of Ag-film thickness reduction and plasmonic effects at structural defects.

  20. Application of mixtures of polymeric carriers for dissolution enhancement of fenofibrate using hot-melt extrusion.

    PubMed

    Kalivoda, Adela; Fischbach, Matthias; Kleinebudde, Peter

    2012-06-15

    Hot-melt extrusion was applied to improve dissolution behavior of poorly soluble model drug fenofibrate. Blends of polymers were used as carrier: copovidone (COP), polyvinyl caprolactam-polyvinyl acetate-polyethylene glycol copolymer (PVCL-PVAc-PEG) and hypromellose 2910/5 (HPMC). The ratio of fenofibrate to COP remained constantly 1+3 (weighted parts) with varying amounts of PVCL-PVAc-PEG and HPMC. Solid state of fenofibrate was characterized by X-ray diffractometry and differential scanning calorimetry. Dissolution performance was compared to marketed formulations Lipidil and Lipidil-Ter. Stability studies were conducted at 25°C/60%rH. The dissolution rate from extrudates was significantly increased when compared to pure fenofibrate powder or physical mixture of the components. A supersaturation of 7.6-12.1 was reached with the pelletized extrudates. All extrudates were superior to marketed formulations. No recrystallization was observed after 26 weeks of storage for fenofibrate-COP extrudates 1+3 (weighted parts) with or without polymeric additives. Even so, both degree and duration of supersaturation decreased with increasing storage periods with the exception of fenofibrate-HPMC extrudates. Of particular interest is the finding that by adding polymers with differing release characteristics to the drug-carrier mixture, the dissolution performance of hot-melt extruded solid dosage forms can be readily adapted to meet specific requirements. PMID:22440149

  1. Stress analysis for wall structure in mobile hot cell design

    NASA Astrophysics Data System (ADS)

    Bahrin, Muhammad Hannan; Rahman, Anwar Abdul; Hamzah, Mohd Arif; Mamat, Mohd Rizal; Azman, Azraf; Hasan, Hasni

    2016-01-01

    Malaysian Nuclear Agency is developing a Mobile Hot Cell (MHC) in order to handle and manage Spent High Activity Radioactive Sources (SHARS) such as teletherapy heads and irradiators. At present, there are only two units of MHC in the world, in South Africa and China. Malaysian Mobile Hot cell is developed by Malaysian Nuclear Agency with the assistance of IAEA expert, based on the design of South Africa and China, but with improved features. Stress analysis has been performed on the design in order to fulfil the safety requirement in operation of MHC. This paper discusses the loading analysis effect from the sand to the MHC wall structure.

  2. Multiple hot-carrier collection in photo-excited graphene Moiré superlattices

    PubMed Central

    Wu, Sanfeng; Wang, Lei; Lai, You; Shan, Wen-Yu; Aivazian, Grant; Zhang, Xian; Taniguchi, Takashi; Watanabe, Kenji; Xiao, Di; Dean, Cory; Hone, James; Li, Zhiqiang; Xu, Xiaodong

    2016-01-01

    In conventional light-harvesting devices, the absorption of a single photon only excites one electron, which sets the standard limit of power-conversion efficiency, such as the Shockley-Queisser limit. In principle, generating and harnessing multiple carriers per absorbed photon can improve efficiency and possibly overcome this limit. We report the observation of multiple hot-carrier collection in graphene/boron-nitride Moiré superlattice structures. A record-high zero-bias photoresponsivity of 0.3 A/W (equivalently, an external quantum efficiency exceeding 50%) is achieved using graphene’s photo-Nernst effect, which demonstrates a collection of at least five carriers per absorbed photon. We reveal that this effect arises from the enhanced Nernst coefficient through Lifshtiz transition at low-energy Van Hove singularities, which is an emergent phenomenon due to the formation of Moiré minibands. Our observation points to a new means for extremely efficient and flexible optoelectronics based on van der Waals heterostructures. PMID:27386538

  3. Resonant tunneling diodes as energy-selective contacts used in hot-carrier solar cells

    NASA Astrophysics Data System (ADS)

    Takeda, Yasuhiko; Ichiki, Akihisa; Kusano, Yuya; Sugimoto, Noriaki; Motohiro, Tomoyoshi

    2015-09-01

    Among the four features unique to hot-carrier solar cells (HC-SCs): (i) carrier thermalization time and (ii) carrier equilibration time in the absorber, (iii) energy-selection width and (iv) conductance of the energy-selective contacts (ESCs), requisites of (i)-(iii) for high conversion efficiency have been clarified. We have tackled the remaining issues related to (iv) in the present study. The detailed balance model of HC-SC operation has been improved to involve a finite value of the ESC conductance to find the required values, which in turn has been revealed to be feasible using resonant tunneling diodes (RTDs) consisting of semiconductor quantum dots (QDs) and quantum wells (QWs) by means of a formulation to calculate the conductance of the QD- and QW-RTDs derived using the rigorous solutions of the effective-mass Hamiltonians. Thus, all of the four requisites unique to HC-SCs to achieve high conversion efficiency have been elucidated, and the two requisites related to the ESCs can be fulfilled using the QD- and QW-RTDs.

  4. Resonant tunneling diodes as energy-selective contacts used in hot-carrier solar cells

    SciTech Connect

    Takeda, Yasuhiko Sugimoto, Noriaki; Ichiki, Akihisa; Kusano, Yuya; Motohiro, Tomoyoshi

    2015-09-28

    Among the four features unique to hot-carrier solar cells (HC-SCs): (i) carrier thermalization time and (ii) carrier equilibration time in the absorber, (iii) energy-selection width and (iv) conductance of the energy-selective contacts (ESCs), requisites of (i)-(iii) for high conversion efficiency have been clarified. We have tackled the remaining issues related to (iv) in the present study. The detailed balance model of HC-SC operation has been improved to involve a finite value of the ESC conductance to find the required values, which in turn has been revealed to be feasible using resonant tunneling diodes (RTDs) consisting of semiconductor quantum dots (QDs) and quantum wells (QWs) by means of a formulation to calculate the conductance of the QD- and QW-RTDs derived using the rigorous solutions of the effective-mass Hamiltonians. Thus, all of the four requisites unique to HC-SCs to achieve high conversion efficiency have been elucidated, and the two requisites related to the ESCs can be fulfilled using the QD- and QW-RTDs.

  5. New Observations on Hot-Carrier Degradation in 0.1 μm Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Yeh, Wen-Kuan; Wang, Wen-Han; Fang, Yean-Kuen; Yang, Fu-Liang

    2002-05-01

    This work investigates the hot-carrier effect (HCE) in partially depleted 0.1 μm SOI nMOSFETs. Hot-carrier degradation was investigated with respect to body-contact nMOSFET (BC-SOI) and floating-body nMOSFET without body contact (FB-SOI). It was found that hot-carrier-induced degradation exerts different influences on the drive capacities as well as subthreshold characteristics of FB-SOI and BC-SOI nMOSFETs. In FB-SOI nMOSFET, the floating body effect (FBE) and parasitic bipolar transistor effect (PBT) affect hot-carrier-induced degradation of device characteristics.

  6. Competition between auger recombination and hot-carrier trapping in PL intensity fluctuations of type II nanocrystals.

    PubMed

    Mangum, Benjamin D; Wang, Feng; Dennis, Allison M; Gao, Yongqian; Ma, Xuedan; Hollingsworth, Jennifer A; Htoon, Han

    2014-07-23

    Performing time-tagged, time-correlated, single-photon-counting studies on individual colloidal nanocrystal quantum dots (NQDs), the evolution of photoluminescence (PL) intensity-fluctuation behaviors in near-infrared (NIR) emitting type II, InP/CdS core-shell NQDs is investigated as a function of shell thickness. It is observed that Auger recombination and hot-carrier trapping compete in defining the PL intensity-fluctuation behavior for NQDs with thin shells, whereas the role of hot-carrier trapping dominates for NQDs with thick shells. These studies further reveal the distinct ramifications of altering either the excitation fluence or repetition rate. Specifically, an increase in laser pump fluence results in the creation of additional hot-carrier traps. Alternately, higher repetition rates cause a saturation in hot-carrier traps, thus activating Auger-related PL fluctuations. Furthermore, it is shown that Auger recombination of negatively charged excitons is suppressed more strongly than that of positively charged excitons because of the asymmetry in the electron-hole confinement in type II NQDs. Thus, this study provides new understanding of how both NQD structure (shell thickness and carrier-separation characteristics) and excitation conditions can be used to tune the PL stability, with important implications for room-temperature single-photon generation. Specifically, the first non-blinking NQD capable of single-photon emission in the near-infrared spectral regime is described. PMID:24715631

  7. Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate

    SciTech Connect

    Someya, T.; Ishida, Y.; Yoshida, R.; Iimori, T.; Yukawa, R.; Akikubo, K.; Yamamoto, Sh.; Yamamoto, S.; Kanai, T.; Itatani, J.; Komori, F.; Shin, S.; Matsuda, I.; Fukidome, H.; Funakubo, K.; Suemitsu, M.; Yamamoto, T.

    2014-04-21

    Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi–Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron–electron scattering, and the observed electronic temperature indicates cascade carrier multiplication.

  8. Theory and computation of hot carriers generated by surface plasmon polaritons in noble metals

    PubMed Central

    Bernardi, Marco; Mustafa, Jamal; Neaton, Jeffrey B.; Louie, Steven G.

    2015-01-01

    Hot carriers (HC) generated by surface plasmon polaritons (SPPs) in noble metals are promising for application in optoelectronics, plasmonics and renewable energy. However, existing models fail to explain key quantitative details of SPP-to-HC conversion experiments. Here we develop a quantum mechanical framework and apply first-principles calculations to study the energy distribution and scattering processes of HCs generated by SPPs in Au and Ag. We find that the relative positions of the s and d bands of noble metals regulate the energy distribution and mean free path of the HCs, and that the electron–phonon interaction controls HC energy loss and transport. Our results prescribe optimal conditions for HC generation and extraction, and invalidate previously employed free-electron-like models. Our work combines density functional theory, GW and electron–phonon calculations to provide microscopic insight into HC generation and ultrafast dynamics in noble metals. PMID:26033445

  9. Theory and computation of hot carriers generated by surface plasmon polaritons in noble metals

    NASA Astrophysics Data System (ADS)

    Bernardi, Marco; Mustafa, Jamal; Neaton, Jeffrey B.; Louie, Steven G.

    2015-06-01

    Hot carriers (HC) generated by surface plasmon polaritons (SPPs) in noble metals are promising for application in optoelectronics, plasmonics and renewable energy. However, existing models fail to explain key quantitative details of SPP-to-HC conversion experiments. Here we develop a quantum mechanical framework and apply first-principles calculations to study the energy distribution and scattering processes of HCs generated by SPPs in Au and Ag. We find that the relative positions of the s and d bands of noble metals regulate the energy distribution and mean free path of the HCs, and that the electron-phonon interaction controls HC energy loss and transport. Our results prescribe optimal conditions for HC generation and extraction, and invalidate previously employed free-electron-like models. Our work combines density functional theory, GW and electron-phonon calculations to provide microscopic insight into HC generation and ultrafast dynamics in noble metals.

  10. Theory and computation of hot carriers generated by surface plasmon polaritons in noble metals.

    PubMed

    Bernardi, Marco; Mustafa, Jamal; Neaton, Jeffrey B; Louie, Steven G

    2015-01-01

    Hot carriers (HC) generated by surface plasmon polaritons (SPPs) in noble metals are promising for application in optoelectronics, plasmonics and renewable energy. However, existing models fail to explain key quantitative details of SPP-to-HC conversion experiments. Here we develop a quantum mechanical framework and apply first-principles calculations to study the energy distribution and scattering processes of HCs generated by SPPs in Au and Ag. We find that the relative positions of the s and d bands of noble metals regulate the energy distribution and mean free path of the HCs, and that the electron-phonon interaction controls HC energy loss and transport. Our results prescribe optimal conditions for HC generation and extraction, and invalidate previously employed free-electron-like models. Our work combines density functional theory, GW and electron-phonon calculations to provide microscopic insight into HC generation and ultrafast dynamics in noble metals. PMID:26033445

  11. Hot-carrier solar cells using low-dimensional quantum structures

    NASA Astrophysics Data System (ADS)

    Watanabe, Daiki; Kasamatsu, Naofumi; Harada, Yukihiro; Kita, Takashi

    2014-10-01

    We propose a high-conversion-efficiency solar cell (SC) utilizing the hot carrier (HC) population in an intermediate-band (IB) of a quantum dot superlattice (QDSL) structure. The bandgap of the host semiconductor in this device plays an important role as an energy-selective barrier for HCs in the QDSLs. According to theoretical calculation using the detailed balance model with an air mass 1.5 spectrum, the optimum IB energy is determined by a trade-off relation between the number of HCs with energy exceeding the conduction-band edge and the number of photons absorbed by the valence band-IB transition. Utilizing experimental data of HC temperature in InAs/GaAs QDSLs, the maximum conversion efficiency under maximum concentration (45 900 suns) has been demonstrated to increase by 12.6% as compared with that for a single-junction GaAs SC.

  12. Hot-carrier solar cells using low-dimensional quantum structures

    SciTech Connect

    Watanabe, Daiki; Kasamatsu, Naofumi; Harada, Yukihiro; Kita, Takashi

    2014-10-27

    We propose a high-conversion-efficiency solar cell (SC) utilizing the hot carrier (HC) population in an intermediate-band (IB) of a quantum dot superlattice (QDSL) structure. The bandgap of the host semiconductor in this device plays an important role as an energy-selective barrier for HCs in the QDSLs. According to theoretical calculation using the detailed balance model with an air mass 1.5 spectrum, the optimum IB energy is determined by a trade-off relation between the number of HCs with energy exceeding the conduction-band edge and the number of photons absorbed by the valence band−IB transition. Utilizing experimental data of HC temperature in InAs/GaAs QDSLs, the maximum conversion efficiency under maximum concentration (45 900 suns) has been demonstrated to increase by 12.6% as compared with that for a single-junction GaAs SC.

  13. Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes.

    PubMed

    Lee, Young Keun; Choi, Hongkyw; Lee, Hyunsoo; Lee, Changhwan; Choi, Jin Sik; Choi, Choon-Gi; Hwang, Euyheon; Park, Jeong Young

    2016-01-01

    Carrier multiplication (i.e. generation of multiple electron-hole pairs from a single high-energy electron, CM) in graphene has been extensively studied both theoretically and experimentally, but direct application of hot carrier multiplication in graphene has not been reported. Here, taking advantage of efficient CM in graphene, we fabricated graphene/TiO2 Schottky nanodiodes and found CM-driven enhancement of quantum efficiency. The unusual photocurrent behavior was observed and directly compared with Fowler's law for photoemission on metals. The Fowler's law exponent for the graphene-based nanodiode is almost twice that of a thin gold film based diode; the graphene-based nanodiode also has a weak dependence on light intensity-both are significant evidence for CM in graphene. Furthermore, doping in graphene significantly modifies the quantum efficiency by changing the Schottky barrier. The CM phenomenon observed on the graphene/TiO2 nanodiodes can lead to intriguing applications of viable graphene-based light harvesting. PMID:27271245

  14. Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes

    NASA Astrophysics Data System (ADS)

    Lee, Young Keun; Choi, Hongkyw; Lee, Hyunsoo; Lee, Changhwan; Choi, Jin Sik; Choi, Choon-Gi; Hwang, Euyheon; Park, Jeong Young

    2016-06-01

    Carrier multiplication (i.e. generation of multiple electron–hole pairs from a single high-energy electron, CM) in graphene has been extensively studied both theoretically and experimentally, but direct application of hot carrier multiplication in graphene has not been reported. Here, taking advantage of efficient CM in graphene, we fabricated graphene/TiO2 Schottky nanodiodes and found CM-driven enhancement of quantum efficiency. The unusual photocurrent behavior was observed and directly compared with Fowler’s law for photoemission on metals. The Fowler’s law exponent for the graphene-based nanodiode is almost twice that of a thin gold film based diode; the graphene-based nanodiode also has a weak dependence on light intensity—both are significant evidence for CM in graphene. Furthermore, doping in graphene significantly modifies the quantum efficiency by changing the Schottky barrier. The CM phenomenon observed on the graphene/TiO2 nanodiodes can lead to intriguing applications of viable graphene-based light harvesting.

  15. Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes

    PubMed Central

    Lee, Young Keun; Choi, Hongkyw; Lee, Hyunsoo; Lee, Changhwan; Choi, Jin Sik; Choi, Choon-Gi; Hwang, Euyheon; Park, Jeong Young

    2016-01-01

    Carrier multiplication (i.e. generation of multiple electron–hole pairs from a single high-energy electron, CM) in graphene has been extensively studied both theoretically and experimentally, but direct application of hot carrier multiplication in graphene has not been reported. Here, taking advantage of efficient CM in graphene, we fabricated graphene/TiO2 Schottky nanodiodes and found CM-driven enhancement of quantum efficiency. The unusual photocurrent behavior was observed and directly compared with Fowler’s law for photoemission on metals. The Fowler’s law exponent for the graphene-based nanodiode is almost twice that of a thin gold film based diode; the graphene-based nanodiode also has a weak dependence on light intensity—both are significant evidence for CM in graphene. Furthermore, doping in graphene significantly modifies the quantum efficiency by changing the Schottky barrier. The CM phenomenon observed on the graphene/TiO2 nanodiodes can lead to intriguing applications of viable graphene-based light harvesting. PMID:27271245

  16. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    SciTech Connect

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-02

    In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  17. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    NASA Astrophysics Data System (ADS)

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-01

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  18. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    SciTech Connect

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-07

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V{sub 2}) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  19. Effects of hot-salt stress corrosion on titanium alloys.

    NASA Technical Reports Server (NTRS)

    Gray, H. R.

    1972-01-01

    Susceptibility of titanium alloys to hot-salt stress-corrosion cracking increased as follows: Ti-2Al-11Sn-5Zr-1Mo-0.2Si (679), Ti-6Al-2Sn-4Zr-2Mo (6242), Ti-6Al-4V (64), Ti-6Al-4V-3Co (643), Ti-8Al-1Mo-1V (811), and Ti-13V-11Cr-3Al (13-11-3). The Ti-5Al-6Sn-2Zr-1Mo-0.25Si (5621S) alloy was both the least and most susceptible, depending on heat treatment. Such rankings can be drastically altered by heat-to-heat variations and processing conditions. Residual compressive stresses reduce susceptibility to stress-corrosion. Detection of substantial concentrations of hydrogen in all corroded alloys confirmed the generality of a previously proposed hydrogen embrittlement mechanism.

  20. Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

    NASA Technical Reports Server (NTRS)

    Alfano, R. R.; Wang, W. B.; Mohaidat, J. M.; Cavicchia, M. A.; Raisky, O. Y.

    1995-01-01

    The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

  1. Physical mechanisms affecting hot carrier-induced degradation in gallium nitride HEMTs

    NASA Astrophysics Data System (ADS)

    Mukherjee, Shubhajit

    Gallium Nitride or GaN-based high electron mobility transistors (HEMTs) is currently the most promising device technology in several key military and civilian applications due to excellent high-power as well as high-frequency performance. Even though the performance figures are outstanding, GaN-based HEMTs are not as mature as some competing technologies, which means that establishing the reliability of the technology is important to enable use in critical applications. The objective of this research is to understand the physical mechanisms affecting the reliability of GaN HEMTs at moderate drain biases (typically VDS < 30 V in the devices considered here). The degradation in device performance is believed to be due to the formation or modification of charged defects near the interface by hydrogen depassivation processes (due to electron-activated hydrogen removal) from energetic carriers. A rate-equation describing the defect generation process is formulated based on this assumption. A combination of ensemble Monte-Carlo (EMC) simulation statistics, ab-initio density functional theory (DFT) calculations, and accelerated stress experiments is used to relate the candidate defects to the overall degradation behavior (VT and gm). The focus of this work is on the 'semi-ON' mode of transistor operation in which the degradation is usually observed to be at its highest. This semi-ON state is reasonably close to the biasing region of class-AB high power amplifiers, which are popular because of the combination of high efficiency and low distortion that is associated with this configuration. The carrier-energy distributions are obtained using an EMC simulator that was developed specifically for III-V HFETs. The rate equation is used to model the degradation at different operating conditions as well as longer stress times from the result of one short duration stress test, by utilizing the carrier-energy distribution obtained from EMC simulations for one baseline condition

  2. Flow Stress Evaluation in Hot Rolling of Steel

    NASA Astrophysics Data System (ADS)

    Aghasafari, P.; Salimi, M.; Daraei, A.

    2014-08-01

    In this paper, an inverse analysis technique is used to obtain the flow curve of materials in a hot rolling finishing mill. This technique is based on minimization of the differences between the experimental and computed values. The flow curves and the friction coefficients at roll/work-piece interface are derived from two different models. Model I is based on simple slab method of analysis. Model II is based on a modified slab method in which the effect of shear stress in calculating the rolling force and torque is taken into account. It is shown that the developed inverse analysis technique is reliable and can simultaneously determine a more accurate flow stress for the material as well as a better estimation for the interface friction factors.

  3. Spectral Dependence of Nanocrystal Photoionization Probability: The Role of Hot-Carrier Transfer

    SciTech Connect

    Padilha, Lazaro A.; Robel, Istvan; Lee, Doh C.; Nagpal, Prashant; Pietryga, Jeffrey M.; Klimov, Victor I.

    2011-01-01

    We conduct measurements of photocharging of PbSe and PbS nanocrystal quantum dots (NQDs) as a function of excitation energy (ℏω). We observe a rapid growth of the degree of photocharging with increasing ℏω, which indicates an important role of hot-carrier transfer in the photoionization process. The corresponding spectral dependence exhibits two thresholds that mark the onsets of weak and strong photocharging. Interestingly, both thresholds are linked to the NQD band gap energy (Eg) and scale as ~1.5Eg and ~3Eg, indicating that the onsets of photoionization are associated with specific nanocrystal states (tentatively, 1P and 2P, respectively) and are not significantly dependent on the energy of external acceptor sites. For all samples, the hot-electron transfer probability increases by nearly 2 orders of magnitude as photon energy increases from 1.5 to 3.5 eV, although at any given wavelength the photoionization probability shows significant sample-to-sample variations (~10–6 to 10–3 for 1.5 eV and ~10–4 to 10–1 for 3.5 eV). In addition to the effect of the NQD size, these variations are likely due to differences in the properties of the NQD surface and/or the number and identity of external acceptor trap sites. The charge-separated states produced by photoionization are characterized by extremely long lifetimes (20 to 85 s) that become longer with increasing NQD size.

  4. DC response of hot carriers under circularly polarized intense microwave fields and intense magnetic fields in quantum wells

    SciTech Connect

    Ishida, Norihisa

    2013-12-04

    Hot carrier dynamics under intense microwave and crossed magnetic fields are investigated theoretically for the case that the dominant scattering process is inelastic collision, especially intersubband and intrasubband transition in Quantum wells. If the applied electric fields are circularly polarized, the equation of motion forms symmetric on the x-y plane. But the carrier motions are complicated to accumulate because of acceleration and emission process. This situation makes possible to create a variation of the carrier motion, typically the carrier bunching is occurred. This state is a sort of population inversion. The DC response of this system attains strongly negative at appropriate field conditions. Through the simulation for the real case described below, it may include a type of induced emission.

  5. Effect of Long-Range Polar Electron-Phonon Interaction on the Hot Carrier Dynamics of GaAs

    NASA Astrophysics Data System (ADS)

    Ong, Chin Shen; Bernadi, Marco; Louie, Steven G.

    Hot carrier dynamics plays an important role in the functionality of electronic and photovoltaic devices. Recent interest in harvesting the energy of hot electrons before it is lost through thermalization has led to renewed interest in the microscopic details of hot electron energy loss mechanisms. Gallium arsenide (GaAs) is of particular interest because amongst its many advantages, it is a direct-gap semiconductor, has high electron mobility and is a high-performing candidate for electronic and photovoltaic applications. GaAs is a polar material, and long-range polar (Frölich) electron-phonon interaction has non-trivial effects on the carrier dynamics in the material. In this work, we investigate the effect of this interaction on the hot carrier dynamics of GaAs. This work is supported by NSF Grant No. DMR15-1508412 and the DOE under Contract No. DE-AC02-05CH11231. Computational resources have been provided by DOE at Lawrence Berkeley National Laboratory's NERSC facility.

  6. Hot Carrier Dynamics in the X Valley in Si and Ge Measured by Pump-IR-Probe Absorption Spectroscopy

    NASA Technical Reports Server (NTRS)

    Wang, W. B.; Cavicchia, M. A.; Alfano, R. R.

    1996-01-01

    Si is the semiconductor of choice for nanoelectronic roadmap into the next century for computer and other nanodevices. With growing interest in Si, Ge, and Si(sub m)Ge(sub n) strained superlattices, knowledge of the carrier relaxation processes in these materials and structures has become increasingly important. The limited time resolution for earlier studies of carrier dynamics in Ge and Si, performed using Nd:glass lasers, was not sufficient to observe the fast cooling processes. In this paper, we present a direct measurement of hot carrier dynamics in the satellite X valley in Si and Ge by time-resolved infrared(IR) absorption spectroscopy, and show the potential of our technique to identify whether the X valley is the lowest conduction valley in semiconductor materials and structures.

  7. Carriers

    MedlinePlus

    ... for those known to be at risk for genetic diseases. Reproductive Choices For couples who are carriers, reproductive decisions can be sensitive. A number of options are available, such as adoption, prenatal testing, and pre-implantation genetic diagnosis (PGD). PGD screens ...

  8. Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal-Oxide-Semiconductor Field-Effect Transistors by a Novel Direct Current Current-Voltage Technique

    NASA Astrophysics Data System (ADS)

    He, Yandong; Zhang, Ganggang

    2012-04-01

    Shallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular with its better tradeoff between breakdown voltage and on-resistance and its compatibility with the standard complementary metal-oxide-semiconductor (CMOS) process. A novel direct current current-voltage (DCIV) technique demonstrated with multiple sharp peak signals is proposed to characterize interface state generation in the channel and in the STI drift regions separately. Degradation of STI-based LDMOS transistors in various hot-carrier stress modes is investigated experimentally by proposed technique. A two-dimensional numerical device simulation is performed to obtain insight into the proposed technique and device degradation characteristics under hot-carrier stress conditions. The impact of interface state location on device electrical characteristics is analyzed from measurement and simulation. Our results show that the maximum Isub stress becomes the worst hot-carrier degradation mode in term of the on-resistance degradation, which is attributed to interface state generation under STI drift region.

  9. Deterministic Stress Modeling of Hot Gas Segregation in a Turbine

    NASA Technical Reports Server (NTRS)

    Busby, Judy; Sondak, Doug; Staubach, Brent; Davis, Roger

    1998-01-01

    Simulation of unsteady viscous turbomachinery flowfields is presently impractical as a design tool due to the long run times required. Designers rely predominantly on steady-state simulations, but these simulations do not account for some of the important unsteady flow physics. Unsteady flow effects can be modeled as source terms in the steady flow equations. These source terms, referred to as Lumped Deterministic Stresses (LDS), can be used to drive steady flow solution procedures to reproduce the time-average of an unsteady flow solution. The goal of this work is to investigate the feasibility of using inviscid lumped deterministic stresses to model unsteady combustion hot streak migration effects on the turbine blade tip and outer air seal heat loads using a steady computational approach. The LDS model is obtained from an unsteady inviscid calculation. The LDS model is then used with a steady viscous computation to simulate the time-averaged viscous solution. Both two-dimensional and three-dimensional applications are examined. The inviscid LDS model produces good results for the two-dimensional case and requires less than 10% of the CPU time of the unsteady viscous run. For the three-dimensional case, the LDS model does a good job of reproducing the time-averaged viscous temperature migration and separation as well as heat load on the outer air seal at a CPU cost that is 25% of that of an unsteady viscous computation.

  10. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    DOE PAGESBeta

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-02

    In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capturemore » cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.« less

  11. Beta-cell mitochondrial carriers and the diabetogenic stress response.

    PubMed

    Brun, Thierry; Maechler, Pierre

    2016-10-01

    Mitochondria play a central role in pancreatic beta-cells by coupling metabolism of the secretagogue glucose to distal events of regulated insulin exocytosis. This process requires transports of both metabolites and nucleotides in and out of the mitochondria. The molecular identification of mitochondrial carriers and their respective contribution to beta-cell function have been uncovered only recently. In type 2 diabetes, mitochondrial dysfunction is an early event and may precipitate beta-cell loss. Under diabetogenic conditions, characterized by glucotoxicity and lipotoxicity, the expression profile of mitochondrial carriers is selectively modified. This review describes the role of mitochondrial carriers in beta-cells and the selective changes in response to glucolipotoxicity. In particular, we discuss the importance of the transfer of metabolites (pyruvate, citrate, malate, and glutamate) and nucleotides (ATP, NADH, NADPH) for beta-cell function and dysfunction. This article is part of a Special Issue entitled: Mitochondrial Channels edited by Pierre Sonveaux, Pierre Maechler and Jean-Claude Martinou. PMID:26979549

  12. Slowing hot-carrier relaxation in graphene using a magnetic field

    NASA Astrophysics Data System (ADS)

    Plochocka, P.; Kossacki, P.; Golnik, A.; Kazimierczuk, T.; Berger, C.; de Heer, W. A.; Potemski, M.

    2009-12-01

    A degenerate pump-probe technique is used to investigate the nonequilibrium carrier dynamics in multilayer graphene. Two distinctly different dynamics of the carrier relaxation are observed. A fast relaxation (˜50fs) of the carriers after the initial effect of phase-space filling followed by a slower relaxation (˜4ps) due to thermalization. Both relaxation processes are less efficient when a magnetic field is applied at low temperatures which is attributed to the suppression of the electron-electron Auger scattering due to the nonequidistant Landau-level spacing of the Dirac fermions in graphene.

  13. Silicon quantum dots in SiOx dielectrics as energy selective contacts in hot carrier solar cells

    NASA Astrophysics Data System (ADS)

    Kar, Debjit; Das, Debajyoti

    2015-06-01

    Thin films of c-Si QDs embedded in a-SiOx dielectric matrix was achieved at a low temperature ˜400°C, from one step process by reactive rf magnetron co-sputtering of c-Si wafer and pure SiO2 targets, in the (H2+Ar)- plasma. Formation of a double-barrier structure has been primarily identified from the SAX data and exclusively confirmed from the resonant tunneling current appearing in the J-E characteristic curve peaks, determined by the discrete energy levels of c-Si QDs, at which it could be used as energy selective contacts in hot carrier solar cells.

  14. Carrier concentration modulation by hot pressing pressure in n-type nanostructured Bi(Se)Te alloy

    NASA Astrophysics Data System (ADS)

    Chan, Tsung-ta E.; LeBeau, James M.; Venkatasubramanian, Rama; Thomas, Peter; Stuart, Judy; Koch, Carl C.

    2013-09-01

    We demonstrate experimentally that an optimal hot pressing pressure is required for high thermoelectric power factor in different n-type Bi(Se)Te alloys for a given processing temperature. This phenomenon is attributed to the variations in carrier concentration, which changes the Seebeck coefficient and therefore the power factor. The variations could arise from the difference in the concentration of charged antisite defects as their formation energy changes with pressures. Furthermore, modifications of the energy gap resulting from the lattice distortions at high pressure also likely play a role.

  15. Experimental and computational results on exciton/free-carrier ratio, hot/thermalized carrier diffusion, and linear/nonlinear rate constants affecting scintillator proportionality

    NASA Astrophysics Data System (ADS)

    Williams, R. T.; Grim, Joel Q.; Li, Qi; Ucer, K. B.; Bizarri, G. A.; Kerisit, S.; Gao, Fei; Bhattacharya, P.; Tupitsyn, E.; Rowe, E.; Buliga, V. M.; Burger, A.

    2013-09-01

    Models of nonproportional response in scintillators have highlighted the importance of parameters such as branching ratios, carrier thermalization times, diffusion, kinetic order of quenching, associated rate constants, and radius of the electron track. For example, the fraction ηeh of excitations that are free carriers versus excitons was shown by Payne and coworkers to have strong correlation with the shape of electron energy response curves from Compton-coincidence studies. Rate constants for nonlinear quenching are implicit in almost all models of nonproportionality, and some assumption about track radius must invariably be made if one is to relate linear energy deposition dE/dx to volume-based excitation density n (eh/cm3) in terms of which the rates are defined. Diffusion, affecting time-dependent track radius and thus density of excitations, has been implicated as an important factor in nonlinear light yield. Several groups have recently highlighted diffusion of hot electrons in addition to thermalized carriers and excitons in scintillators. However, experimental determination of many of these parameters in the insulating crystals used as scintillators has seemed difficult. Subpicosecond laser techniques including interband z scan light yield, fluence-dependent decay time, and transient optical absorption are now yielding experimental values for some of the missing rates and ratios needed for modeling scintillator response. First principles calculations and Monte Carlo simulations can fill in additional parameters still unavailable from experiment. As a result, quantitative modeling of scintillator electron energy response from independently determined material parameters is becoming possible on an increasingly firmer data base. This paper describes recent laser experiments, calculations, and numerical modeling of scintillator response.

  16. Experimental and computational results on exciton/free-carrier ratio, hot/thermalized carrier diffusion, and linear/nonlinear rate constants affecting scintillator proportionality

    SciTech Connect

    Williams, Richard; Grim, Joel; Li, Qi; Ucer, K. B.; Bizarri, G. A.; Kerisit, Sebastien N.; Gao, Fei; Bhattacharya, Pijush; Tupitsyn, Eugene; Rowe, Emmanuel; Buliga, Vladimir M.; Burger, Arnold

    2013-10-01

    Models of nonproportional response in scintillators have highlighted the importance of parameters such as branching ratios, carrier thermalization times, diffusion, kinetic order of quenching, associated rate constants, and radius of the electron track. For example, the fraction ηeh of excitations that are free carriers versus excitons was shown by Payne and coworkers to have strong correlation with the shape of electron energy response curves from Compton-coincidence studies. Rate constants for nonlinear quenching are implicit in almost all models of nonproportionality, and some assumption about track radius must invariably be made if one is to relate linear energy deposition dE/dx to volume-based excitation density n (eh/cm3) in terms of which the rates are defined. Diffusion, affecting time-dependent track radius and thus density of excitations, has been implicated as an important factor in nonlinear light yield. Several groups have recently highlighted diffusion of hot electrons in addition to thermalized carriers and excitons in scintillators. However, experimental determination of many of these parameters in the insulating crystals used as scintillators has seemed difficult. Subpicosecond laser techniques including interband z scan light yield, fluence-dependent decay time, and transient optical absorption are now yielding experimental values for some of the missing rates and ratios needed for modeling scintillator response. First principles calculations and Monte Carlo simulations can fill in additional parameters still unavailable from experiment. As a result, quantitative modeling of scintillator electron energy response from independently determined material parameters is becoming possible on an increasingly firmer data base. This paper describes recent laser experiments, calculations, and numerical modeling of scintillator response.

  17. Collective excitation of plasmonic hot-spots for enhanced hot charge carrier transfer in metal/semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Piot, Adrien; Earl, Stuart K.; Ng, Charlene; Dligatch, Svetlana; Roberts, Ann; Davis, Timothy J.; Gómez, Daniel E.

    2015-04-01

    We show how a combination of near- and far-field coupling of the localised surface plasmon resonances in aluminium nanoparticles deposited on TiO2 films greatly enhances the visible light photocatalytic activity of the semiconductor material. We demonstrate two orders of magnitude enhancement in the rate of decomposition of methylene blue under visible light illumination when the surface of TiO2 films is decorated with gratings of Al nanoparticle dimers.We show how a combination of near- and far-field coupling of the localised surface plasmon resonances in aluminium nanoparticles deposited on TiO2 films greatly enhances the visible light photocatalytic activity of the semiconductor material. We demonstrate two orders of magnitude enhancement in the rate of decomposition of methylene blue under visible light illumination when the surface of TiO2 films is decorated with gratings of Al nanoparticle dimers. Electronic supplementary information (ESI) available: Detailed information on estimates of hot-electron injection efficiencies, electrodynamic simulations, sample preparation, spectroscopic and structural characterization and photocatalytic experiments. See DOI: 10.1039/c5nr01592h

  18. Hot Carrier Transport at the Graphene-Metal Interface Induced by Strong Lateral Photo-Dember Effect

    NASA Astrophysics Data System (ADS)

    Liu, Chang-Hua; Chang, You-Chia; Dissanayake, Nanditha; Zhang, Yaozhong; Zhong, Zhaohui

    2013-03-01

    Ultrafast photo-excitation in a semiconductor can lead to transient spatial charge gradient if electrons and holes have different drift velocities. The charge gradient builds up the transient electric field and causes the subsequent terahertz pulse emission. This phenomenon, known as the photo-Dember effect, was typically considered insignificant in graphene due to its similar electron and hole mobilities. Here, we observe hot carrier transport at the graphene-metal interface driven by the photo-Dember electric field under femtosecond pulse laser excitation. The polarity of hot carrier transport is determined by the asymmetry of electron and hole mobilities of the graphene device and cannot be flipped sign by tuning graphene doping level. This indicates the formation of strong photo-Dember field, dominating over the graphene/metal built-in electric field or thermal electric field. We further analyze the spatial distribution and temporal evolution of the transient electric field near the contact edge by using the drift-diffusion model. The modeling results suggest that strong photo-Dember effect is caused by the low electronic specific heat of graphene and a huge charge gradient near the graphene-metal interface under pulse laser excitation. This work was supported from the Donors of the American Chemical Society Petroleum Research Fund and the U-M/SJTU Collaborative Research Program in Renewable Energy Science and Technology.

  19. Earthquake lights and the stress-activation of positive hole charge carriers in rocks

    USGS Publications Warehouse

    St-Laurent, F.; Derr, J.S.; Freund, F.T.

    2006-01-01

    Earthquake-related luminous phenomena (also known as earthquake lights) may arise from (1) the stress-activation of positive hole (p-hole) charge carriers in igneous rocks and (2) the accumulation of high charge carrier concentrations at asperities in the crust where the stress rates increase very rapidly as an earthquake approaches. It is proposed that, when a critical charge carrier concentration is reached, the p-holes form a degenerated solid state plasma that can break out of the confined rock volume and propagate as a rapidly expanding charge cloud. Upon reaching the surface the charge cloud causes dielectric breakdown at the air-rock interface, i.e. corona discharges, accompanied by the emission of light and high frequency electromagnetic radiation. ?? 2006 Elsevier Ltd. All rights reserved.

  20. Response of hot element wall shear stress gages in laminar oscillating flows

    NASA Technical Reports Server (NTRS)

    Cook, W. J.; Murphy, J. D.; Giddings, T. A.

    1986-01-01

    An experimental investigation of the time-dependent response of hot element wall shear stress gages in unsteady periodic air flows is reported. The study has focused on wall shear stress in laminar oscillating flows produced on a flat plate by a free stream velocity composed of a mean component and a superposed sinusoidal variation. Two types of hot element gages, platinum film and flush wire, were tested for values of reduced frequency ranging from 0.14 to 2.36. Values of the phase angle of the wall shear stress variation relative to the free stream velocity, as indicated by the hot element gages, are compared with numerical prediction. The comparisons show that the gages indicate a wall shear stress variation that lags the true variation, and that the gages will also not indicate the correct wall shear stress variation in periodic turbulent flows.

  1. Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitation

    NASA Astrophysics Data System (ADS)

    Zhang, Yi; Tayebjee, Murad J. Y.; Smyth, Suntrana; Dvořák, Miroslav; Wen, Xiaoming; Xia, Hongze; Heilmann, Martin; Liao, Yuanxun; Zhang, Zewen; Williamson, Todd; Williams, Joshua; Bremner, Stephen; Shrestha, Santosh; Huang, Shujuan; Schmidt, Timothy W.; Conibeer, Gavin J.

    2016-03-01

    We have investigated the ultrafast carrier dynamics in a 1 μm bulk In0.265Ga0.735N thin film grown using energetic neutral atom-beam lithography/epitaxy molecular beam epitaxy. Cathodoluminescence and X-ray diffraction experiments are used to observe the existence of indium-rich domains in the sample. These domains give rise to a second carrier population and bi-exponential carrier cooling is observed with characteristic lifetimes of 1.6 and 14 ps at a carrier density of 1.3 × 1016 cm-3. A combination of band-filling, screening, and hot-phonon effects gives rise to a two-fold enhanced mono-exponential cooling rate of 28 ps at a carrier density of 8.4 × 1018 cm-3. This is the longest carrier thermalization time observed in bulk InGaN alloys to date.

  2. Effect of exposure cycle on hot salt stress corrosion of a titanium alloy

    NASA Technical Reports Server (NTRS)

    Gray, H. R.; Johnston, J. R.

    1974-01-01

    The influence of exposure cycle on the hot-salt stress-corrosion cracking resistance of the Ti-8Al-1Mo-1V alloy was determined. Both temperature and stress were cycled simultaneously to simulate turbine-powered aircraft service cycles. Temperature and stress were also cycled independently to determine their individual effects. Substantial increases in crack threshold stresses were observed for cycles in which both temperature and stress or temperature alone were applied for 1 hour and removed for 3 hours. The crack threshold stresses for these cyclic exposures were twice those determined for continuous exposure for the same total time of 96 hours.

  3. Nature and the Sign of Stress-Activated Electronic Charge Carriers in Rocks

    NASA Astrophysics Data System (ADS)

    Freund, F.

    2013-12-01

    When rocks are subjected to increasing uniaxial stress, highly mobile charge carriers become activated, which have the remarkable ability to flow out of the stressed rock volume, spreading into and through adjacent less stressed or unstressed rocks. Two basic questions arise: (i) What is the nature - and the sign - of these charge carriers and (ii) How do they exist in the rocks before being activated by stress? A large body of evidence is available that points to a positive sign, consistent with defect electrons, which (in semiconductor parlance) are called 'holes'. Holes that reside in the oxygen anion sublattice, associated with O 2sp-type energy states at the upper edge of the valence band, are called 'positive holes'. The positive holes exist in rocks in form of dormant, electrically inactive peroxy defects. Ever so slight deformation, leading to grain-grain sliding, can break the peroxy bonds and activate positive holes. Electrons that are co-activated by the same process cannot flow out of the stressed rock volume into the unstressed rocks. This leads to charge separation and, hence, to a potential difference similar to a battery voltage. In order to experimentally confirm the positive sign of the positive hole charge carriers flowing out of a given stressed rock volume, certain rules have to be obeyed. If not, unreliable results may be obtained, even negative outflow currents, seemingly inconsistent with the postulated positive sign of the positive hole charge carriers. Such errors can be avoided by taking into account that the charge outflow occurs in response to a 'battery potential', V, rapidly evolving between stressed and unstressed or less stressed parts of the rock. The current I given by Ohm's Law, I=V/R, is then limited by the internal resistance R. A second complicating factor arises from the fact that, as the positive holes are stress-activated and begin to flow out, they simultaneously recombine, returning to the dormant state. The ensuing

  4. Control of hot-carrier relaxation for realizing ideal quantum-dot intermediate-band solar cells

    PubMed Central

    Tex, David M.; Kamiya, Itaru; Kanemitsu, Yoshihiko

    2014-01-01

    For intermediate-band solar cells, the broad absorption spectrum of quantum dots (QDs) offers a favorable conversion efficiency, and photocurrent generation via efficient two-step two-photon-absorption (TS-TPA) in QDs is essential for realizing high-performance solar cells. In the last decade, many works were dedicated to improve the TS-TPA efficiency by modifying the QD itself, however, the obtained results are far from the requirements for practical applications. To reveal the mechanisms behind the low TS-TPA efficiency in QDs, we report here on two- and three-beam photocurrent measurements of InAs quantum structures embedded in AlGaAs. Comparison of two- and three-beam photocurrent spectra obtained by subbandgap excitation reveals that the QD TS-TPA efficiency is improved significantly by suppressing the relaxation of hot TS-TPA carriers to unoccupied shallow InAs quantum structure states. PMID:24535195

  5. Silicon quantum dots in SiO{sub x} dielectrics as energy selective contacts in hot carrier solar cells

    SciTech Connect

    Kar, Debjit; Das, Debajyoti

    2015-06-24

    Thin films of c-Si QDs embedded in a-SiO{sub x} dielectric matrix was achieved at a low temperature ∼400°C, from one step process by reactive rf magnetron co-sputtering of c-Si wafer and pure SiO{sub 2} targets, in the (H{sub 2}+Ar)- plasma. Formation of a double-barrier structure has been primarily identified from the SAX data and exclusively confirmed from the resonant tunneling current appearing in the J-E characteristic curve peaks, determined by the discrete energy levels of c-Si QDs, at which it could be used as energy selective contacts in hot carrier solar cells.

  6. Molecularly designed lipid microdomains for solid dispersions using a polymer/inorganic carrier matrix produced by hot-melt extrusion.

    PubMed

    Adler, Camille; Schönenberger, Monica; Teleki, Alexandra; Kuentz, Martin

    2016-02-29

    Amorphous solid dispersions have for many years been a focus in oral formulations, especially in combination with a hot-melt extrusion process. The present work targets a novel approach with a system based on a fatty acid, a polymer and an inorganic carrier. It was intended to adsorb the acidic lipid by specific molecular interactions onto the solid carrier to design disorder in the alkyl chains of the lipid. Such designed lipid microdomains (DLM) were created as a new microstructure to accommodate a compound in a solid dispersion. Vibrational spectroscopy, X-ray powder diffraction, atomic force microscopy as well as electron microscopic imaging were employed to study a system of stearic acid, hydroxypropylcellulose and aluminum magnesium silicate. β-carotene was used as a poorly water-soluble model substance that is difficult to formulate with conventional solid dispersion formulations. The results indicated that the targeted molecular excipient interactions indeed led to DLMs for specific compositions. The different methods provided complementary aspects and important insights into the created microstructure. The novel delivery system appeared to be especially promising for the formulation of oral compounds that exhibit both high crystal energy and lipophilicity. PMID:26721729

  7. Electrically induced phase transition in α -(BEDT-TTF)2I3 : Indications for Dirac-like hot charge carriers

    NASA Astrophysics Data System (ADS)

    Peterseim, T.; Ivek, T.; Schweitzer, D.; Dressel, M.

    2016-06-01

    The two-dimensional organic conductor α -(BEDT-TTF)2I3 undergoes a metal-insulator transition at TCO=135 K due to electronic charge ordering. We have conducted time-resolved investigations of its electronic properties in order to explore the field- and temperature-dependent dynamics. At a certain threshold field, the system switches from a low-conducting to a high-conducting state, accompanied by a negative differential resistance. Our time-dependent infrared investigations indicate that close to TCO, the strong electric field pushes the crystal into a metallic state with optical properties similar to the one for T >TCO . Well into the insulating state, however, at T =80 K , the spectral response evidences a completely different electronically induced high-conducting state. Applying a two-state model of hot electrons explains the observations by excitation of charge carriers with a high mobility. They resemble the Dirac-like charge carriers with a linear dispersion of the electronic bands found in α -(BEDT-TTF)2I3 at high pressure. Extensive numerical simulations quantitatively reproduce our experimental findings in all details.

  8. Hot-salt stress-corrosion of titanium alloys as related to turbine engine operation.

    NASA Technical Reports Server (NTRS)

    Gray, H. R.

    1972-01-01

    Demonstration that the major variables influencing hot-salt stress-corrosion of titanium alloys are alloy processing conditions, heat-to-heat variations and composition, surface condition, and cyclic exposures. Under simulated compressor environmental conditions the commonly used 64 alloy is creep limited and not stress-corrosion limited. Cyclic exposures to stress-corrosion conditions are not as detrimental as continuous exposures for equivalent total times.

  9. Photoelectric energy conversion of plasmon-generated hot carriers in metal-insulator-semiconductor structures.

    PubMed

    García de Arquer, F Pelayo; Mihi, Agustín; Kufer, Dominik; Konstantatos, Gerasimos

    2013-04-23

    Plasmonic excitation in metals has received great attention for light localization and control of light-matter interactions at the nanoscale with a plethora of applications in absorption enhancement, surface-enhanced Raman scattering, or biosensing. Electrically active plasmonic devices, which had remained underexplored, have recently become a growing field of interest. In this report we introduce a metal-insulator-semiconductor heterostructure for plasmo-electric energy conversion, a novel architecture to harvest hot-electrons derived from plasmonic excitations. We demonstrate external quantum efficiency (EQE) of 4% at 460 nm using a Ag nanostructured electrode and EQE of 1.3% at 550 nm employing a Au nanostructured electrode. The insulator interfacial layer has been found to play a crucial role in interface passivation, a requisite in photovoltaic applications to achieving both high open-circuit voltages (0.5 V) and fill-factors (0.5), but its introduction simultaneously modifies hot-electron injection and transport. We investigate the influence passivation has on these processes for different material configurations, and characterize different types of transport depending on the initial plasmon energy band, reporting power conversion efficiencies of 0.03% for nanopatterned silver electrodes. PMID:23495769

  10. Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory.

    PubMed

    Yang, Yiming; Peng, Xingyue; Kim, Hong-Seok; Kim, Taeho; Jeon, Sanghun; Kang, Hang Kyu; Choi, Wonjun; Song, Jindong; Doh, Yong-Joo; Yu, Dong

    2015-09-01

    We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10(5). The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength-dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device, which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption. PMID:26226506

  11. Effect of initial hydrogen content of a titanium alloy on susceptibility to hot salt stress corrosion.

    NASA Technical Reports Server (NTRS)

    Gray, H. R.

    1972-01-01

    The influence of the initial hydrogen content of a titanium alloy on subsequent resistance to hot salt stress corrosion embrittlement and cracking was investigated. A Ti-8Al-1Mo-1V alloy was tested in four conditions: mill annealed (70 ppm H), duplex annealed (70 ppm H), vacuum annealed to an intermediate (36 ppm H) and a low (9 ppm H) hydrogen level. Material annealed at 650 C (duplex condition) exhibited resistance to hot salt stress corrosion superior to that exhibited by material in the mill annealed condition. Reduction of the alloy hydrogen content from 70 to as low as 9 ppm did not influence resistance to hot salt stress corrosion embrittlement or cracking.

  12. Efficient plasmonic emission by the quantum Čerenkov effect from hot carriers in graphene

    PubMed Central

    Kaminer, Ido; Katan, Yaniv Tenenbaum; Buljan, Hrvoje; Shen, Yichen; Ilic, Ognjen; López, Josué J.; Wong, Liang Jie; Joannopoulos, John D.; Soljačić, Marin

    2016-01-01

    Graphene plasmons have been found to be an exciting plasmonic platform, thanks to their high field confinement and low phase velocity, motivating contemporary research to revisit established concepts in light–matter interaction. In a conceptual breakthrough over 80 years old, Čerenkov showed how charged particles emit shockwaves of light when moving faster than the phase velocity of light in a medium. To modern eyes, the Čerenkov effect offers a direct and ultrafast energy conversion scheme from charge particles to photons. The requirement for relativistic particles, however, makes Čerenkov emission inaccessible to most nanoscale electronic and photonic devices. Here we show that graphene plasmons provide the means to overcome this limitation through their low phase velocity and high field confinement. The interaction between the charge carriers flowing inside graphene and the plasmons enables a highly efficient two-dimensional Čerenkov emission, giving a versatile, tunable and ultrafast conversion mechanism from electrical signal to plasmonic excitation. PMID:27293014

  13. Efficient plasmonic emission by the quantum Čerenkov effect from hot carriers in graphene.

    PubMed

    Kaminer, Ido; Katan, Yaniv Tenenbaum; Buljan, Hrvoje; Shen, Yichen; Ilic, Ognjen; López, Josué J; Wong, Liang Jie; Joannopoulos, John D; Soljačić, Marin

    2016-01-01

    Graphene plasmons have been found to be an exciting plasmonic platform, thanks to their high field confinement and low phase velocity, motivating contemporary research to revisit established concepts in light-matter interaction. In a conceptual breakthrough over 80 years old, Čerenkov showed how charged particles emit shockwaves of light when moving faster than the phase velocity of light in a medium. To modern eyes, the Čerenkov effect offers a direct and ultrafast energy conversion scheme from charge particles to photons. The requirement for relativistic particles, however, makes Čerenkov emission inaccessible to most nanoscale electronic and photonic devices. Here we show that graphene plasmons provide the means to overcome this limitation through their low phase velocity and high field confinement. The interaction between the charge carriers flowing inside graphene and the plasmons enables a highly efficient two-dimensional Čerenkov emission, giving a versatile, tunable and ultrafast conversion mechanism from electrical signal to plasmonic excitation. PMID:27293014

  14. Solution-Processed Gold Nanorods Integrated with Graphene for Near-Infrared Photodetection via Hot Carrier Injection.

    PubMed

    Xia, Zhouhui; Li, Pengfei; Wang, Yusheng; Song, Tao; Zhang, Qiao; Sun, Baoquan

    2015-11-01

    Graphene-based photodetectors have attracted wide interest due to their high-speed, wide-band photodetection and potential as highly energy-efficient integrated devices. However, the inherently low-absorption cross-section and nonselective spectra response hinder its utilization as a high-performance photodetector. Here, we report a solution-processed and high-spectral-selectivity photodetector based on a gold nanorods (Au NRs)-graphene heterojunction with near-infrared (NIR) detection. Au NRs are used as a subwavelength scattering source, and nanoantennas with wide light absorption range from ultraviolet to near-infrared via tuning their geometry. Photons couple into Au NRs, exciting resonant plasmas and generating hot carriers that pump into graphene, resulting in selective NIR photodetection. A flexible NIR photodetector is also demonstrated based on this simple structure. Au NRs can achieve variable resonance frequencies by the design of different aspect ratios as nanoantennae for graphene, which promises the selective amplifying of the photoresponsivity and enables highly specific detection. PMID:26468669

  15. Hot-salt stress-corrosion of titanium alloys as related to turbine operation

    NASA Technical Reports Server (NTRS)

    Gray, H. R.

    1972-01-01

    In an effort to simulate typical compressor operating conditions of current turbine engines, special test facilities were designed. Air velocity, air pressure, air dewpoint, salt deposition temperature, salt concentration, and specimen surface condition were systematically controlled and their influence on hot-salt stress-corrosion evaluated. The influence of both continuous and cyclic stress-temperature exposures was determined. The relative susceptibility of a variety of titanium alloys in commonly used heat-treated conditions was determined. The effects of both environmental and material variables were used to interpret the behavior of titanium alloys under hot-salt stress-corrosion conditions found in jet engines and to appraise their future potential under such conditions.

  16. Stress corrosion cracking of zirconium in hot nitric acid

    SciTech Connect

    Kajimura, H.; Nagano, H. )

    1992-05-01

    Zirconium (Zr) has excellent general corrosion resistance in nitric acid. However, stress corrosion cracking (SCC) has been reported in concentrated nitric acid. The purpose of this paper is to evaluate the SCC susceptibility of Zr as a function of HNO[sub 3] concentration, from 6 to 94%, and temperature. The SCC mechanism was also investigated in relation to the electrochemical behavior. The slow strain rate test technique, under constant potential conditions, was mainly adopted for SCC testing. SCC did not occur in the boiling HNO[sub 3] at concentrations less than 70% unless an anodic potential was applied. The critical SCC potential, which coincides with the transient potential from passive to transpassive behavior in the polarization curve, decreased with an increase in HNO[sub 3] concentration. In boiling 94% HNO[sub 3] Zr exhibited SCC even under open-circuit potential conditions.

  17. Effect of Column Disorder on Carrier Transport in Columnar Discotic Liquid Crystal Evaluated by Applying Precisely Controlled Shear Stress

    NASA Astrophysics Data System (ADS)

    Kim, Jaeki; Yamasaki, Naoyuki; Hayashi, Takeshi; Katayama, Mitsuyoshi; Yoshida, Hiroyuki; Moritake, Hiroshi; Fujii, Akihiko; Ozaki, Masanori

    2013-10-01

    The effect of column disorder on carrier drift mobility in columnar discotic liquid crystals has been investigated by applying a precisely controlled oscillating shear stress. Drift mobilities on the order of 10-1 cm2.V-1.s-1 were confirmed for positive and negative carriers in the columnar phase of 1,4,8,11,15,18,22,25-octahexylphthalocyanine in a well-aligned homeotropic geometry, in which the columnar axis was perfectly perpendicular to substrates with an electrode. A slight tilt of the columnar axis upon applying shear stress led to a marked decrease in electronic carrier mobility from 10-1 to less than 10-6 cm2.V-1.s-1, and transport was only confirmed for positive ion carriers. This result indicates that a uniform shear stress blocks the carrier transport path in the entire area of the electrode, and one-dimensional carrier transport path along the columns is easily hindered in columnar discotic liquid crystals.

  18. The role of hydrogen in hot-salt stress corrosion cracking of titanium-aluminum alloys

    NASA Technical Reports Server (NTRS)

    Ondrejcin, R. S.

    1971-01-01

    Additional support is presented for the previously proposed role of hydrogen as an embrittling agent in hot-salt stress corrosion cracking of titanium-aluminum alloys. The main source of hydrogen formed during the reactions of titanium alloys with hot salt was identified as water associated with the salt. Hydrogen is produced by the reaction of an intermediate (hydrogen halide) with the alloy rather than from metal-water reactions. The fracture mode of precracked tensile specimens was ductile when the specimens were tested in air, and brittle when tests were made in high-pressure hydrogen. Stressed titanium-aluminum alloys also were cracked by bombardment with hydrogen ions produced in a proton accelerator. The approximate concentrations of the hydrogen ions in the alloys were calculated.

  19. An electrochemical model for hot-salt stress-corrosion of titanium alloys

    NASA Technical Reports Server (NTRS)

    Garfinkle, M.

    1972-01-01

    An electrochemical model of hot-salt stress-corrosion cracking of titanium alloys is proposed based on an oxygen-concentration cell. Hydrogen embrittlement is proposed as the direct cause of cracking, the hydrogen being generated as the results of the hydrolysis of complex halides formed at the shielded anode of the electrochemical cell. The model found to be consistent with the diverse observations made both in this study and by many investigators in this field.

  20. Hot Salt Stress Corrosion Cracking Behavior of Ti-6242S Alloy

    NASA Astrophysics Data System (ADS)

    Pustode, Mangesh D.; Raja, V. S.

    2015-12-01

    The hot salt stress corrosion cracking behavior of Ti-6A1-2Sn-4Zr-2Mo-0.1Si (Ti-6242S) alloy was studied in the temperature range from 523.15 K to 673.15 K (250 °C to 400 °C). The alloy showed marginal susceptibility at 573.15 K (300 °C), and the extent susceptibility found to increase significantly at higher test temperatures. The specimens did not fail in long-term (1000 hours) hot salt constant load exposure tests carried out at 623.15 K and 673.15 K (350 °C and 400 °C), even at the stress levels more than the 80 pct of their ultimate tensile strength. However, the salt exposure in both stressed and unstressed conditions found to significantly impair the room-temperature ductility. The study shows that pitting and formation of slip step were the precursor events for SCC initiation; and the cracks were found to grow in transgranular manner in the primary- α phase and discontinuous-faceted manner in the transformed β colony. Furthermore, the XRD analysis of hot salt-exposed specimens revealed the presence of titanium hydride phase, which could be responsible for the embrittlement.

  1. Orientation of minimum principal stress in the hot dry rock geothermal reservoir at Fenton Hill, New Mexico

    SciTech Connect

    Burns, K.L.

    1991-01-01

    The stress field at the source of microearthquakes in the interior of the hot dry rock geothermal reservoir at Fenton Hill appears to be different to the far field stress outside the reservoir. The stress field seems to be re-oriented prior to failure, during the course of processes that inflate the reservoir. The state of stress, both inside and outside, the hot dry rock (HDR) geothermal reservoir at Fenton Hill, is important in predicting the course of stress-dependent processes, and in transferring HDR technology developed at Fenton Hill, to sites, such as at Clearlake in California, where the stress field is expected to be substantially different. The state of stress at Fenton Hill is not well known because of limitations in stress measuring technology. It is necessary to use a variety of indirect methods and seek an estimate of the stress. 5 refs.

  2. Heterogeneous stress state of island arc crust in northeastern Japan affected by hot mantle fingers

    NASA Astrophysics Data System (ADS)

    Shibazaki, Bunichiro; Okada, Tomomi; Muto, Jun; Matsumoto, Takumi; Yoshida, Takeyoshi; Yoshida, Keisuke

    2016-04-01

    By considering a thermal structure based on dense geothermal observations, we model the stress state of the crust beneath the northeastern Japan island arc under a compressional tectonic regime using a finite element method with viscoelasticity and elastoplasticity. We consider a three-layer structure (upper crust, lower crust, and uppermost mantle) to define flow properties. Numerical results show that the brittle-viscous transition becomes shallower beneath the Ou Backbone Range compared with areas near the margins of the Pacific Ocean and the Japan Sea. Moreover, several elongate regions with a shallow brittle-viscous transition are oriented transverse to the arc, and these regions correspond to hot fingers (i.e., high-temperature regions in the mantle wedge). The stress level is low in these regions due to viscous deformation. Areas of seismicity roughly correspond to zones of stress accumulation where many intraplate earthquakes occur. Our model produces regions with high uplift rates that largely coincide with regions of high elevation (e.g., the Ou Backbone Range). The stress state, fault development, and uplift around the Ou Backbone Range can all be explained by our model. The results also suggest the existence of low-viscosity regions corresponding to hot fingers in the island arc crust. These low-viscosity regions have possibly affected viscous relaxation processes following the 2011 Tohoku-oki earthquake.

  3. Constitutive Modeling for Flow Stress Behavior of Nimonic 80A Superalloy During Hot Deformation Process

    NASA Astrophysics Data System (ADS)

    Gu, Sendong; Zhang, Liwen; Zhang, Chi; Shen, Wenfei

    2016-03-01

    The hot deformation characteristics of nickel-based alloy Nimonic 80A were investigated by isothermal compression tests conducted in the temperature range of 1,000-1,200°C and the strain rate range of 0.01—5 s-1 on a Gleeble-1500 thermomechanical simulator. In order to establish the constitutive models for dynamic recrystallization (DRX) behavior and flow stress of Nimonic 80A, the material constants α, n and DRX activation energy Q in the constitutive models were calculated by the regression analysis of the experimental data. The dependences of initial stress, saturation stress, steady-state stress, dynamic recovery (DRV) parameter, peak strain, critical strain and DRX grain size on deformation parameters were obtained. Then, the Avrami equation including the critical strain for DRX and the peak strain as a function of strain was established to describe the DRX volume fraction. Finally, the constitutive model for flow stress of Nimonic 80A was developed in DRV region and DRX region, respectively. The flow stress values predicted by the constitutive model are in good agreement with the experimental ones, which indicates that the constitutive model can give an accurate estimate for the flow stress of Nimonic 80A under the deformation conditions.

  4. Conjugating binary systems for spacecraft thermal control. Appendix C: Aeroassist Flight Experiment Carrier Vehicle preliminary stress analysis

    NASA Technical Reports Server (NTRS)

    Ingram, J. E.; Murray, T. O.

    1989-01-01

    An assessment of the static strength of the Aeroassist Flight Experiment (AFE) Carrier Vehicle is presented. The Carrier Vehicle is the structural component which provides the mounting platform for the experiments, on-board computers, batteries, and other black boxes. In addition, the Solid Rocket Motor (SRM), the Thrusters, and the Aerobrake are all attached directly to the Carrier Vehicle. The basic approach in this analysis was to develop a NASTRAN Finite Element Model as a parallel effort to the preliminary design, and to use the internal loads from this model to perform the stress analysis. The NASTRAN method of Inertial Relief was employed. This method involves either specifying a set of CG (center of gravity) accelerations or applying forces at the CG and representing the Carrier Vehicle and all its mounted devices with the proper stiffness and mass properties.

  5. BASIC AMINO ACID CARRIER 2 gene expression modulates arginine and urea content and stress recovery in Arabidopsis leaves

    PubMed Central

    Planchais, Séverine; Cabassa, Cécile; Toka, Iman; Justin, Anne-Marie; Renou, Jean-Pierre; Savouré, Arnould; Carol, Pierre

    2014-01-01

    In plants, basic amino acids are important for the synthesis of proteins and signaling molecules and for nitrogen recycling. The Arabidopsis nuclear gene BASIC AMINO ACID CARRIER 2 (BAC2) encodes a mitochondria-located carrier that transports basic amino acids in vitro. We present here an analysis of the physiological and genetic function of BAC2 in planta. When BAC2 is overexpressed in vivo, it triggers catabolism of arginine, a basic amino acid, leading to arginine depletion and urea accumulation in leaves. BAC2 expression was known to be strongly induced by stress. We found that compared to wild type plants, bac2 null mutants (bac2-1) recover poorly from hyperosmotic stress when restarting leaf expansion. The bac2-1 transcriptome differs from the wild-type transcriptome in control conditions and under hyperosmotic stress. The expression of genes encoding stress-related transcription factors (TF), arginine metabolism enzymes, and transporters is particularly disturbed in bac2-1, and in control conditions, the bac2-1 transcriptome has some hallmarks of a wild-type stress transcriptome. The BAC2 carrier is therefore involved in controlling the balance of arginine and arginine-derived metabolites and its associated amino acid metabolism is physiologically important in equipping plants to respond to and recover from stress. PMID:25076951

  6. Thermal Stress in HFEF Hot Cell Windows Due to an In-Cell Metal Fire

    DOE PAGESBeta

    Solbrig, Charles W.; Warmann, Stephen A.

    2016-01-01

    This work investigates an accident during the pyrochemical extraction of Uranium and Plutonium from PWR spent fuel in an argon atmosphere hot cell. In the accident, the heavy metals (U and Pu) being extracted are accidentally exposed to air from a leaky instrument penetration which goes through the cell walls. The extracted pin size pieces of U and Pu metal readily burn when exposed to air. Technicians perform the electrochemical extraction using manipulators through a 4 foot thick hot cell concrete wall which protects them from the radioactivity of the spent fuel. Four foot thick windows placed in the wallmore » allow the technicians to visually control the manipulators. These windows would be exposed to the heat of the metal fire. As a result, this analysis determines if the thermal stress caused by the fire would crack the windows and if the heat would degrade the window seals allowing radioactivity to escape from the cell.« less

  7. Thermal Stress in HFEF Hot Cell Windows Due to an In-Cell Metal Fire

    SciTech Connect

    Solbrig, Charles W.; Warmann, Stephen A.

    2016-01-01

    This work investigates an accident during the pyrochemical extraction of Uranium and Plutonium from PWR spent fuel in an argon atmosphere hot cell. In the accident, the heavy metals (U and Pu) being extracted are accidentally exposed to air from a leaky instrument penetration which goes through the cell walls. The extracted pin size pieces of U and Pu metal readily burn when exposed to air. Technicians perform the electrochemical extraction using manipulators through a 4 foot thick hot cell concrete wall which protects them from the radioactivity of the spent fuel. Four foot thick windows placed in the wall allow the technicians to visually control the manipulators. These windows would be exposed to the heat of the metal fire. As a result, this analysis determines if the thermal stress caused by the fire would crack the windows and if the heat would degrade the window seals allowing radioactivity to escape from the cell.

  8. Effects of localization on hot carriers in InAs/AlAs{sub x}Sb{sub 1–x} quantum wells

    SciTech Connect

    Tang, J.; Whiteside, V. R.; Esmaielpour, H.; Vijeyaragunathan, S.; Mishima, T. D.; Santos, M. B.; Sellers, I. R.

    2015-02-09

    The temperature dependence of a InAs/AlAs{sub 0.84}Sb{sub 0.16} multi-quantum-well sample is studied using continuous wave photoluminescence. An “s-shape” shift in peak energy is observed and attributed to low energy localization states. High incident power density photoluminescence measurements were performed to probe the nature of such localization. The results opposed the possibility of a type-II band structure and supported the idea of low energy localization states. The effect of such localization on hot carriers in our system was studied and an improvement in their stability due to hole mobility at elevated temperature is presented.

  9. Evaluating Effects of Heat Stress on Cognitive Function among Workers in a Hot Industry

    PubMed Central

    Mazloumi, Adel; Golbabaei, Farideh; Mahmood Khani, Somayeh; Kazemi, Zeinab; Hosseini, Mostafa; Abbasinia, Marzieh; Farhang Dehghan, Somayeh

    2014-01-01

    Background:Heat stress, as one of the most common occupational health problems, can impair operators' cognitive processes. The aim of this study was to evaluate the impact of thermal stress on cognitive function among workers in a hot industry. Methods: In this cross-sectional study conducted in Malibel Saipa Company in 2013, workers were assigned into two groups: one group were exposed to heat stress (n=35), working in casting unit and the other group working in machining unit (n=35) with a normal air conditioning. Wet Bulb Globe Temperature was measured at three heights of ankle, abdomen, and head. In order to evaluate the effects of heat stress on attention and reaction time, Stroop tests 1, 2, and 3 were conducted before starting the work and during the work. Results: A significant positive correlation was observed between WBGT and test duration (P=0.01) and reaction time of Stroop test 3 (P=0.047), and between number of errors in Stroop tests 1, 2, and 3, during the work (P= 0.001). Moreover, Stroop test 3 showed a significant higher score for both test duration and reaction time of workers in case group. Conclusion: Results of the present study, conducted in a real work environment, confirmed the impairment of cognitive functions, including selective attention and reaction time, under heat stress conditions. PMID:25649311

  10. Modeling of Flow Stress of High Titanium Content 6061 Aluminum Alloy Under Hot Compression

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Guan, Yingping; Wang, Zhenhua

    2016-07-01

    Hot compression tests were performed on high titanium content 6061 aluminum alloy (AA 6061-Ti) using a Gleeble-3500 thermomechanical testing system at temperatures from 350 to 510 °C with a constant strain rate in the range of 0.001-10 s-1. Three types of flow stress models were established from the experimental stress-strain curves, the correlation coefficient (R), mean absolute relative error (MARE), and root mean square deviation (RMSD) between the predicted data and the experimental data were also calculated. The results show that the Fields-Backofen model, which includes a softening factor, was the simplest mathematical expression with a level of precision appropriate for the numerical simulations. However, the Arrhenius and artificial neural network (ANN) models were also consistent with the experimental results but they are more limited in their application in terms of their accuracy and the mathematical expression of the models.

  11. The mechanism of slow hot-hole cooling in lead-iodide perovskite: first-principles calculation on carrier lifetime from electron-phonon interaction.

    PubMed

    Kawai, Hiroki; Giorgi, Giacomo; Marini, Andrea; Yamashita, Koichi

    2015-05-13

    We report on an analysis of hot-carrier lifetimes from electron-phonon interaction in lead iodide perovskites using first-principles calculations. Our calculations show that the holes in CsPbI3 have very long lifetimes in the valence band region situated 0.6 eV below the top of the valence band. On the other hand, no long lifetime is predicted in PbI3(-). These different results reflect the different electronic density of states (DOSs) in the valence bands, that is, a small DOS for the former structure while a sharp DOS peak for the latter structure. We propose a reduction of the relaxation paths in the small valence DOS as being the origin of the slow hot-hole cooling. Analyzing the generalized Eliashberg functions, we predict that different perovskite A-site cations do not have an impact on the carrier decay mechanism. The similarity between the DOS structures of CsPbI3 and CH3NH3PbI3 enables us to extend the description of the decay mechanism of fully inorganic CsPbI3 to its organic-inorganic counterpart, CH3NH3PbI3. PMID:25807270

  12. Spectroscopic Signatures of Photocharging due to Hot-Carrier Transfer in Solutions of Semiconductor Nanocrystals under Low-Intensity Ultraviolet Excitation

    SciTech Connect

    McGuire, John A.; Sykora, Milan; Robel, Istvan; Padilha, Lazaro A.; Joo, Jin; Pietryga, Jeffrey M.; Klimov, Victor I.

    2010-10-12

    We show that excitation of solutions of well-passivated PbSe semiconductor nanocrystals (NCs) with ultraviolet (3.1 eV) photons can produce long-lived charge-separated states in which the NC core is left with a nonzero net charge. Since this process is not observed for lower-energy (1.5 eV) excitation, we ascribe it to hot-carrier transfer to some trap site outside the NC. Photocharging leads to bleaching of steady-state absorption, partial quenching of emission, and additional fast time scales in carrier dynamics due to Auger decay of charged single- and multiexciton states. The degree of photocharging, f, saturates at a level that varies from 5 to 15% depending on the sample. The buildup of the population of charged NCs is extremely slow indicating very long, tens of seconds, lifetimes of these charge-separated states. Based on these time scales and the measured onset of saturation of f at excitation rates around 0.05-1 photon per NC per ms, we determine that the probability of charging following a photon absorption event is of the order of 10-4 to 10-3. The results of these studies have important implications for the understanding of photophysical properties of NCs, especially in the case of time-resolved measurements of carrier multiplication.

  13. Spectroscopic signatures of photocharging due to hot-carrier transfer in solutions of semiconductor nanocrystals under low-intensity ultraviolet excitation.

    PubMed

    McGuire, John A; Sykora, Milan; Robel, István; Padilha, Lazaro A; Joo, Jin; Pietryga, Jeffrey M; Klimov, Victor I

    2010-10-26

    We show that excitation of solutions of well-passivated PbSe semiconductor nanocrystals (NCs) with ultraviolet (3.1 eV) photons can produce long-lived charge-separated states in which the NC core is left with a nonzero net charge. Since this process is not observed for lower-energy (1.5 eV) excitation, we ascribe it to hot-carrier transfer to some trap site outside the NC. Photocharging leads to bleaching of steady-state absorption, partial quenching of emission, and additional fast time scales in carrier dynamics due to Auger decay of charged single- and multiexciton states. The degree of photocharging, f, saturates at a level that varies from 5 to 15% depending on the sample. The buildup of the population of charged NCs is extremely slow indicating very long, tens of seconds, lifetimes of these charge-separated states. Based on these time scales and the measured onset of saturation of f at excitation rates around 0.05-1 photon per NC per ms, we determine that the probability of charging following a photon absorption event is of the order of 10(-4) to 10(-3). The results of these studies have important implications for the understanding of photophysical properties of NCs, especially in the case of time-resolved measurements of carrier multiplication. PMID:20939512

  14. The development of anti-heat stress clothing for construction workers in hot and humid weather.

    PubMed

    Chan, Albert P C; Guo, Y P; Wong, Francis K W; Li, Y; Sun, S; Han, X

    2016-04-01

    The purpose of this study was to develop anti-heat stress clothing for construction workers in hot and humid weather. Following DeJonge's functional clothing design process, the design situation was explored, including clothing fabric heat/moisture transporting properties and UV protection and the aspects of clothing ergonomic design (mobility, convenience, and safety). The problem structure was derived from the results of the surveys in three local construction sites, which agreed well with the task requirements and observations. Specifications were consequently described and 30 commercially available fabrics were identified and tested. Fabric testing data and design considerations were inputted in S-smart system to predict the thermal functional performance of the clothing. A new uniform prototype was developed and evaluated. The results of all measurements suggest that the new uniform which incorporated fabrics with superior heat/moisture transporting properties and loose-fitting design could reduce the workers' heat stress and improve their comfort and work performance. Practitioner Summary: The construction workers' uniform currently used in Hong Kong during summer was unsatisfactory. Following DeJonge's functional clothing design process, an anti-heat stress uniform was developed by testing 30 fabrics and predicting clothing thermal functional performance using S-smart system. The new uniform could reduce the workers' heat stress and improve their comfort and work performance. PMID:26399956

  15. Relative susceptibility of titanium alloys to hot-salt stress-corrosion

    NASA Technical Reports Server (NTRS)

    Gray, H. R.

    1971-01-01

    Susceptibility of titanium alloys to hot-salt stress-corrosion cracking increased as follows: Ti-2Al-11Sn-5Zr-0.2Si(679), Ti-6Al-2Sn-4Zr-2Mo(6242), Ti-6Al-4V(64), Ti-6Al-4V-3Co(643), Ti-8Al-1Mo-1V(811), and Ti-13V-11Cr-3A1(13-11-3). The Ti-5Al-6Sn-2Zr-1Mo-0.25Si(5621S) alloy was both the least and most susceptible depending on heat treatment. Such rankings can be drastically altered by heat-to-heat and processing variations. Residual compressive stresses and cyclic exposures also reduce susceptibility to stress-corrosion. Simulated turbine-engine compressor environmental variables such as air velocity, pressure, dewpoint, salt concentration, and salt deposition temperature have only minor effects. Detection of substantial concentrations of hydrogen in all corroded alloys confirmed the existence of a hydrogen embrittlement mechanism.

  16. Effect of initial hydrogen content of a titanium alloy on susceptibility to hot-salt stress-corrosion

    NASA Technical Reports Server (NTRS)

    Gray, H. R.

    1971-01-01

    The Ti-8Al-1Mo-1V alloy was tested in four conditions: mill annealed (70 ppM H), duplex annealed (70 ppM H), vacuum annealed to an intermediate (36 ppM) and a low (9 ppM H) hydrogen level. Material annealed at 650 C (duplex condition) exhibited resistance to hot-salt stress corrosion superior to that exhibited by material in the mill-annealed condition. Reduction of the alloy hydrogen content from 70 to as low as 9 ppM did not influence resistance to hot-salt stress corrosion embrittlement or cracking.

  17. Characterization of true stress-true strain curves obtained by hot deformation of different types of steels

    SciTech Connect

    Martin, G.E.S.; Ruzzante, J.E. . Grupo Deformacion en Caliente CNEA, Buenos Aires . Dept. Materials)

    1993-10-01

    The results of hot torsion tests in order to characterize the true stress-true strain curves at a high temperature for six different types of steel (carbon, free-cutting and alloyed), were presented in a previous work, and from those results, an expression was proposed to calculate the peak strain [bar [epsilon

  18. Green electroluminescence from Tb4O7 films on silicon: Impact excitation of Tb3+ ions by hot carriers

    NASA Astrophysics Data System (ADS)

    Zhu, Chen; Lv, Chunyan; Jiang, Miaomiao; Zhou, Junwei; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

    2016-02-01

    We report on green electroluminescence (EL) due to the intra-4f transitions of the trivalent terbium (Tb3+) ions inherent in a Tb4O7 film that is sandwiched between the ITO film and heavily phosphorous- or boron-doped silicon (n+-Si or p+-Si) substrate, thus forming the so-called metal-oxide-semiconductor (MOS) device. The onset voltage of such EL is below 10 V. From the current-voltage characteristic and voltage-dependent EL spectra of the aforementioned MOS device, it is derived that the Tb-related green EL results from the impact excitation of Tb3+ ions by the hot electrons (holes), which stem from the electric-field acceleration of the electrons (holes) injected from the n+-Si (p+-Si) substrate via the trap-assisted tunneling mechanism.

  19. Assessment of Hot-Carrier Effects on Charge Separation in Type-II CdS/CdTe Heterostructured Nanorods.

    PubMed

    Okano, Makoto; Sakamoto, Masanori; Teranishi, Toshiharu; Kanemitsu, Yoshihiko

    2014-09-01

    Charge separation in semiconducting materials is an essential process that determines the efficiency of photovoltaic devices and photocatalysts. Herein, we report the charge-separation dynamics in type-II CdS/CdTe heterostructured nanorods revealed by femtosecond transient-absorption (TA) measurements with a broad-band white-light probe. Under selective excitation of the CdTe segment, bleaching signals at the band gap energy of CdS were clearly observed with a rise component on a subpicosecond time scale, which indicates efficient electron transfer from CdTe to CdS. The pump-energy dependence of the TA dynamics shows that hot electrons rapidly relax to the bottom of the conduction band of CdTe, and then the electrons transfer to the CdS segment. PMID:26278242

  20. The impact of match-play tennis in a hot environment on indirect markers of oxidative stress and antioxidant status

    PubMed Central

    Knez, Wade L; Périard, JP

    2014-01-01

    Objectives The purpose of this study was to determine the impact of changes in oxidative stress and antioxidant status in response to playing tennis in HOT (∼36°C and 35% relative humidity (RH)) and COOL (∼22°C and 70% RH) conditions. Methods 10 male tennis players undertook two matches for an effective playing time (ie, ball in play) of 20 min, corresponding to ∼122 and ∼107 min of total play in HOT and COOL conditions, respectively. Core body temperature, body mass and indirect markers of oxidative stress (diacrons reactive oxygen metabolic test) and antioxidant status (biological antioxidant potential test) were assessed immediately prematch, midmatch and postmatch, and 24 and 48 h into recovery. Results Regardless of the condition, oxidative stress remained similar throughout play and into recovery. Likewise, match-play tennis in the COOL had no impact on antioxidant status. However, antioxidants status increased significantly in the HOT compared with COOL environment (p<0.05). Body mass losses (∼0.5 kg) were similar between conditions. Rectal temperature increased during both matches (p<0.05), but with a greater magnitude in the HOT (39.3±0.5°C) versus COOL (38.7±0.2°C) environment (p<0.05). Conclusions Match-play tennis in the heat does not exacerbate the development of oxidative stress, but significantly increases antioxidant status. These data suggest that the heat stress observed in the HOT environment may provide a necessary signal for the upregulation of antioxidant defence, dampening cellular damage. PMID:24668382

  1. Adaptation to hot climate and strategies to alleviate heat stress in livestock production.

    PubMed

    Renaudeau, D; Collin, A; Yahav, S; de Basilio, V; Gourdine, J L; Collier, R J

    2012-05-01

    Despite many challenges faced by animal producers, including environmental problems, diseases, economic pressure, and feed availability, it is still predicted that animal production in developing countries will continue to sustain the future growth of the world's meat production. In these areas, livestock performance is generally lower than those obtained in Western Europe and North America. Although many factors can be involved, climatic factors are among the first and crucial limiting factors of the development of animal production in warm regions. In addition, global warming will further accentuate heat stress-related problems. The objective of this paper was to review the effective strategies to alleviate heat stress in the context of tropical livestock production systems. These strategies can be classified into three groups: those increasing feed intake or decreasing metabolic heat production, those enhancing heat-loss capacities, and those involving genetic selection for heat tolerance. Under heat stress, improved production should be possible through modifications of diet composition that either promotes a higher intake or compensates the low feed consumption. In addition, altering feeding management such as a change in feeding time and/or frequency, are efficient tools to avoid excessive heat load and improve survival rate, especially in poultry. Methods to enhance heat exchange between the environment and the animal and those changing the environment to prevent or limit heat stress can be used to improve performance under hot climatic conditions. Although differences in thermal tolerance exist between livestock species (ruminants > monogastrics), there are also large differences between breeds of a species and within each breed. Consequently, the opportunity may exist to improve thermal tolerance of the animals using genetic tools. However, further research is required to quantify the genetic antagonism between adaptation and production traits to evaluate

  2. Effect of Temperature Reversion on Hot Ductility and Flow Stress-Strain Curves of C-Mn Continuously Cast Steels

    NASA Astrophysics Data System (ADS)

    Dong, Zhihua; Li, Wei; Long, Mujun; Gui, Lintao; Chen, Dengfu; Huang, Yunwei; Vitos, Levente

    2015-08-01

    The influence of temperature reversion in secondary cooling and its reversion rate on hot ductility and flow stress-strain curve of C-Mn steel has been investigated. Tensile specimens were cooled at various regimes. One cooling regime involved cooling at a constant rate of 100 °C min-1 to the test temperature, while the others involved temperature reversion processes at three different reversion rates before deformation. After hot tensile test, the evolution of mechanical properties of steel was analyzed at various scales by means of microstructure observation, ab initio prediction, and thermodynamic calculation. Results indicated that the temperature reversion in secondary cooling led to hot ductility trough occurring at higher temperature with greater depth. With increasing temperature reversion rate, the low temperature end of ductility trough extended toward lower temperature, leading to wider hot ductility trough with slightly reducing depth. Microstructure examinations indicated that the intergranular fracture related to the thin film-like ferrite and (Fe,Mn)S particles did not changed with varying cooling regimes; however, the Widmanstatten ferrite surrounding austenite grains resulted from the temperature reversion process seriously deteriorated the ductility. In addition, after the temperature reversion in secondary cooling, the peak stress on the flow curve slightly declined and the peak of strain to peak stress occurred at higher temperature. With increasing temperature reversion rate, the strain to peak stress slightly increased, while the peak stress showed little variation. The evolution of plastic modulus and strain to peak stress of austenite with varying temperature was in line with the theoretical prediction on Fe.

  3. Effect of applied stress, crystal orientation, and phases on type-II hot corrosion of CMSX-4

    NASA Astrophysics Data System (ADS)

    Lortrakul, Pongpat

    Gas turbine blades encounter corrosion problems, especially at the bare metal connection between the blades and the rotor. Elevated temperatures, a corrosive environment, and high stress are factors that can reduce blade lifespan. Thus, understanding the relation between corrosion behavior and stress is key to improving the design of turbine blades and their operation. Type-II hot corrosion mechanisms (700 °C in flowing 1000 ppm-SO2 with Na2SO4 on the specimen surface) are representative of this problem, and Meier and Luthra have expertly established the mechanisms of Ni-alloy and Co-alloy systems. However, little research has focused on CMSX-4, which is a Ni-based superalloy single crystal. Moreover, research on the effects of phases (eutectic and gamma' size), crystal orientations, and applied stress is lacking. In this research, tests of the early stages of hot corrosion---from 3 minutes to 50 hours of exposure---are performed to develop an understanding of type-II hot corrosion mechanism in CMSX-4.The discovery is that a single Cobalt oxide rich layer is initially formed above NiO in the outward oxidation and turns into spheroids afterward. A unique remnant gamma' precipitate structure is observed in the inward oxidation zone and this evidence indicates the preferential corrosion behavior. Sulfur layer above the original surface is one of the causes influencing the overall oxidation thickness by pushing the outward oxidation scale. As-cast CMSX-4 with a wide variety of phases is used to examine the phase effects. With short exposure, coarse gamma' phase influences the inward oxidation thickness but the effect becomes less with time. Specimens with different orientations (growth and transverse directions) are used to examine orientation effect. A notched specimen with a wedge was invented to maintain a stress gradient during hot corrosion test. The results suggest that there may be an effect of stress on the overall oxidation thickness.

  4. Proposal of a broadband, polarization-insensitive and high-efficiency hot-carrier schottky photodetector integrated with a plasmonic silicon ridge waveguide

    NASA Astrophysics Data System (ADS)

    Yang, Liu; Kou, Pengfei; Shen, Jianqi; Lee, El Hang; He, Sailing

    2015-12-01

    We propose a broadband, polarization-insensitive and high-efficiency plasmonic Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission (IPE). The distinctive features of this design are that it has a gold film covering both the top and the sidewalls of a dielectric silicon ridge waveguide with the Schottky contact formed at the gold-silicon interface and the sidewall coverage of gold can be easily tuned by an insulating layer. An extensive physical model on IPE of hot carriers is presented in detail and is applied to calculate and examine the performance of this detector. In comparison with a diode having only the top gold contact, the polarization sensitivity of the responsivity is greatly minimized in our photodetector with gold film covering both the top and the sidewall. Much higher responsivities for both polarizations are also achieved over a broad wavelength range of 1.2-1.6 μm. Moreover, the Schottky contact is only 4 μm long, leading to a very small dark current. Our design is very promising for practical applications in high-density silicon photonic integration.

  5. The Effects of Screw Configuration and Polymeric Carriers on Hot-Melt Extruded Taste-Masked Formulations Incorporated into Orally Disintegrating Tablets

    PubMed Central

    Morott, Joseph T.; Pimparade, Manjeet; Park, Jun-Bom; Worley, Chelsea P.; Majumdar, Soumyajit; Lian, Zhuoyang; Pinto, Elanor; Bi, Yunxia; Durig, Thomas; Repka, Michael A.

    2015-01-01

    The primary aim of this research was to produce successfully taste masked formulations of Sildenafil Citrate (SC) using hot-melt extrusion (HME) technology. Multiple screw configurations and polymeric carriers were evaluated for their effects on taste masking efficiency, which was assessed by both E-tongue analysis and in vitro dissolution in simulated salivary fluid (SSF, pH 6.8 artificial saliva). The screw configurations were further assessed for their effects on the morphology of the API using PXRD, FT-IR and mid-infrared chemical imaging. It was determined that the screw configuration had a profound effect on the taste masking efficiency of the formulations as a result of altering the physical state of the API. Selected extruded formulations using ethylcellulose (EC) with a pore former were further formulated into orally disintegrating tablets (ODTs), which were optimized by varying the grade and percentage of the superdisintegrant used. An optimized disintegration time of approximately 8 seconds was achieved. The final ODT formulation exhibited excellent taste masking properties with over 85% drug release in gastric media as well as physical tablet properties. Interestingly, friability, which tends to be a common concern when formulating ODTs, was well within the acceptable limits (<1%) for common tablets. PMID:25410968

  6. The effects of screw configuration and polymeric carriers on hot-melt extruded taste-masked formulations incorporated into orally disintegrating tablets.

    PubMed

    Morott, Joseph T; Pimparade, Manjeet; Park, Jun-Bom; Worley, Chelsea P; Majumdar, Soumyajit; Lian, Zhuoyang; Pinto, Elanor; Bi, Yunxia; Durig, Thomas; Repka, Michael A

    2015-01-01

    The primary aim of this research was to produce successfully taste masked formulations of Sildenafil Citrate (SC) using hot-melt extrusion (HME) technology. Multiple screw configurations and polymeric carriers were evaluated for their effects on taste masking efficiency, which was assessed by both E-tongue analysis and in vitro dissolution in simulated salivary fluid (SSF, pH 6.8 artificial saliva). The screw configurations were further assessed for their effects on the morphology of the API using PXRD, FT-IR and mid-infrared chemical imaging. It was determined that the screw configuration had a profound effect on the taste masking efficiency of the formulations as a result of altering the physical state of the API. Selected extruded formulations using ethylcellulose (EC) with a pore former were further formulated into orally disintegrating tablets (ODTs), which were optimized by varying the grade and percentage of the superdisintegrant used. An optimized disintegration time of approximately 8 seconds was achieved. The final ODT formulation exhibited excellent taste masking properties with over 85% drug release in gastric media as well as physical tablet properties. Interestingly, friability, which tends to be a common concern when formulating ODTs, was well within the acceptable limits (<1%) for common tablets. PMID:25410968

  7. Assessing the Heat Stress and Establishing the Limits for Work in a Hot Mine

    PubMed Central

    Wyndham, C. H.; Allan, A. McD.; Bredell, G. A. G.; Andrew, R.

    1967-01-01

    The management of the mine at Mount Isa, Queensland, Australia decided to enquire into the following questions with regard to men working underground in hot conditions: (a) Which of the various heat stress indices predicts most accurately the effects on workmen of the various heat stress factors which occur in the mine at Mount Isa? (b) How best should the limits of heat stress be judged at which the normal 8-hour shift should be reduced to a 6-hour shift, or at which work should be stopped? With these objects in mind, oral temperatures were measured on 86 workmen after three hours of ordinary work in the mine and also on 36 occasions on 29 volunteers after three hours of stepping on and off a stool at a work rate of 1,560 ft. lb./min. These men were studied in different environmental heat stresses over the range that occurs in the mine. Dry bulb air temperatures (D.B.), wet bulb temperatures (W.B.), velocity of air movements, and globe temperatures (G.T.) were measured in the micro-climate in which each man worked. An estimate was made of the work rate of the 86 workmen. From these estimates and measurements, the predicted 4-hourly sweat rate (P4SR) and corrected effective temperature (C.E.T.) values were determined for each heat stress condition. P4SR values varied between 0·9 and 6·5 and C.E.T. between 70° and 95°F. Correlation coefficients were calculated between oral temperatures and W.B.s, C.E.T.s, and P4SRs and are 0·51, 0·64, and 0·75 respectively. Further analysis was confined to C.E.T. and P4SR. Plots of oral temperature on P4SR for conditions where G.T. was more than 10°F. above D.B. were found to fall well below the rest of the plots, indicating that P4SR exaggerates the effect of mean radiant temperature. These data were therefore excluded from the rest of the analysis. Regression equations were calculated for oral temperature on P4SR and for oral temperature on C.E.T. for (a) men `on the job', for (i) conditions where D.B. was more than 10

  8. Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor

    SciTech Connect

    Zhou, Xin; Qiao, Ming; He, Yitao; Li, Zhaoji; Zhang, Bo

    2015-11-16

    Hot-carrier-induced linear drain current (I{sub dlin}) and threshold voltage (V{sub th}) degradations for the thin layer SOI field p-channel lateral double-diffused MOS (pLDMOS) are investigated. Two competition degradation mechanisms are revealed and the hot-carrier conductance modulation model is proposed. In the channel, hot-hole injection induced positive oxide trapped charge and interface trap gives rise to the V{sub th} increasing and the channel conductance (G{sub ch}) decreasing, then reduces I{sub dlin}. In the p-drift region, hot-electron injection induced negative oxide trapped charge enhances the conductance of drift doping resistance (G{sub d}), and then increases I{sub dlin}. Consequently, the eventual I{sub dlin} degradation is controlled by the competition of the two mechanisms due to conductance modulation in the both regions. Based on the model, it is explained that the measured I{sub dlin} anomalously increases while the V{sub th} is increasing with power law. The thin layer field pLDMOS exhibits more severe V{sub th} instability compared with thick SOI layer structure; as a result, it should be seriously evaluated in actual application in switching circuit.

  9. The effect of stress on the magnetic alignment of hot-pressed Fe-Nd-B magnets derived by computer simulation

    SciTech Connect

    Park, J.D.; Kwak, C.S. . Dept. of Mechanical Engineering); Jang, T.S. . Dept. of Metallurgical Engineering); Jeung, W.Y. . Division of Materials)

    1993-11-01

    The distribution of stress during hot pressing of a cast (Fe,Cu)-Nd-B magnet was simulated by SPID. The calculated stress components were compression stress ([sigma][sub z]) and shear stress ([tau][sub rz]). The stress component causing the magnetic alignment during hot pressing was [sigma][sub z][center dot][tau][sub rz] virtually played no role in the magnetic alignment. Generally, [sigma][sub z] was higher at the center of a specimen and decreased gradually along the radial direction to the periphery of a specimen during hot pressing, while [tau][sub rz] was negligible and uniformly distributed throughout the specimen. Random orientation and grain growth of [phi] were evident at the outer part of a specimen where [sigma][sub z] is very weak.

  10. A Study of Heat Stress in Extremely Hot Environments, and the Infra-red Reflectance of Some Potential Shielding Materials

    PubMed Central

    Lewis, Charles E.; Scherberger, Richard F.; Miller, Franklin A.

    1960-01-01

    In the course of evaluating industrial heat exposures, three very hot environments having heat stress indices over 300 have been analysed by the techniques of Haines and Hatch (1952) and Belding and Hatch (1955). In addition, pulse and oral temperature measurements were made on three subjects exposed to these environments. These studies indicate that the methods of Haines and Hatch and Belding and Hatch tend to err on the side of safety when applied to very hot areas. Safe exposure times calculated by their techniques are approximately one-third those determined by either physiological measurement or by safe tolerance curves recommended by the American Society of Heating and Ventilation Engineers (ASHVE). The intelligent use of shielding as a method of protecting workers from radiant heat requires a knowledge of the infra-red reflectance curves of common industrial materials. Nineteen such curves are included. Images PMID:14416497

  11. Phycocyanin-encapsulating hyalurosomes as carrier for skin delivery and protection from oxidative stress damage.

    PubMed

    Castangia, Ines; Manca, Maria Letizia; Catalán-Latorre, Ana; Maccioni, Anna Maria; Fadda, Anna Maria; Manconi, Maria

    2016-04-01

    The phycobiliprotein phycocyanin, extracted from Klamath algae, possesses important biological properties but it is characterized by a low bioavailability due to its high molecular weight. To overcome the bioavailability problems, phycocyanin was successfully encapsulated, using an environmentally-friendly method, into hyalurosomes, a new kind of phospholipid vesicles immobilised with hyaluronan sodium salt by the simple addition of drug/sodium hyaluronate water dispersion to phospholipids. Liposomes were used as a comparison. Vesicles were small in size and homogeneously dispersed, being the mean size always smaller than 150 nm and PI never higher than 0.31. Liposomes were unilamellar and spherical, the addition of the polymer slightly modify the vesicular shape which remain spherical, while the addition of PEG improve the lamellarity of vesicles being multilamellar vesicles. In all cases phycocyanin was encapsulated in good amount especially using hyalurosomes and PEG hyalurosomes (65 and 61% respectively). In vitro penetration studies suggested that hyalurosomes favoured the phycocyanin deposition in the deeper skin layers probably thanks to their peculiar hyaluronan-phospholipid structure. Moreover, hyalurosomes were highly biocompatible and improved phycocyanin antioxidant activity on stressed human keratinocytes respect to the drug solution. PMID:26886823

  12. Functionalized Mesoporous Silica Nanoparticle with Antioxidants as a New Carrier That Generates Lower Oxidative Stress Impact on Cells.

    PubMed

    Ebabe Elle, Raymond; Rahmani, Saher; Lauret, Céline; Morena, Marion; Bidel, Luc Philippe Régis; Boulahtouf, Abdelhay; Balaguer, Patrick; Cristol, Jean-Paul; Durand, Jean-Olivier; Charnay, Clarence; Badia, Eric

    2016-08-01

    Mesoporous silica nanoparticles (MSNs) were covalently coated with antioxidant molecules, namely, caffeic acid (MSN-CAF) or rutin (MSN-RUT), in order to diminish the impact of oxidative stress induced after transfection into cells, thus generating safer carriers used for either drug delivery or other applications. Two cellular models involved in the entry of NPs in the body were used for this purpose: the intestinal Caco-2 and the epidermal HaCaT cell lines. Rutin gave the best results in terms of antioxidant capacities preservation during coupling procedures, cellular toxicity alleviation, and decrease of ROS level after 24 h incubation of cells with grafted nanoparticles. These protective effects of rutin were found more pronounced in HaCaT than in Caco-2 cells, indicating some cellular specificity toward defense against oxidative stress. In order to gain more insight about the Nrf2 response, a stable transfected HaCaT cell line bearing repeats of the antioxidant response element (ARE) in front of a luciferase reporter gene was generated. In this cell line, both tBHQ and quercetin (Nrf2 agonists), but not rutin, were able to induce, in a dose-dependent fashion, the luciferase response. Interestingly, at high concentration, MSN-RUT was able to induce a strong Nrf2 protective response in HaCaT cells, accompanied by a comparable induction of HO-1 mRNA. The level of these responses was again less important in Caco-2 cells. To conclude, in keratinocyte cell line, the coupling of rutin to silica nanoparticles was beneficial in term of ROS reduction, cellular viability, and protective effects mediated through the activation of the Nrf2 antioxidant pathway. PMID:27367273

  13. Overexpression of the Vacuolar Sugar Carrier AtSWEET16 Modifies Germination, Growth, and Stress Tolerance in Arabidopsis1[W

    PubMed Central

    Klemens, Patrick A.W.; Patzke, Kathrin; Deitmer, Joachim; Spinner, Lara; Le Hir, Rozenn; Bellini, Catherine; Bedu, Magali; Chardon, Fabien; Krapp, Anne; Neuhaus, H. Ekkehard

    2013-01-01

    Here, we report that SUGARS WILL EVENTUALLY BE EXPORTED TRANSPORTER (SWEET16) from Arabidopsis (Arabidopsis thaliana) is a vacuole-located carrier, transporting glucose (Glc), fructose (Fru), and sucrose (Suc) after heterologous expression in Xenopus laevis oocytes. The SWEET16 gene, similar to the homologs gene SWEET17, is mainly expressed in vascular parenchyma cells. Application of Glc, Fru, or Suc, as well as cold, osmotic stress, or low nitrogen, provoke the down-regulation of SWEET16 messenger RNA accumulation. SWEET16 overexpressors (35SPro:SWEET16) showed a number of peculiarities related to differences in sugar accumulation, such as less Glc, Fru, and Suc at the end of the night. Under cold stress, 35SPro:SWEET16 plants are unable to accumulate Fru, while under nitrogen starvation, both Glc and Fru, but not Suc, were less abundant. These changes of individual sugars indicate that the consequences of an increased SWEET16 activity are dependent upon the type of external stimulus. Remarkably, 35SPro:SWEET16 lines showed improved germination and increased freezing tolerance. The latter observation, in combination with the modified sugar levels, points to a superior function of Glc and Suc for frost tolerance. 35SPro:SWEET16 plants exhibited increased growth efficiency when cultivated on soil and showed improved nitrogen use efficiency when nitrate was sufficiently available, while under conditions of limiting nitrogen, wild-type biomasses were higher than those of 35SPro:SWEET16 plants. Our results identify SWEET16 as a vacuolar sugar facilitator, demonstrate the substantial impact of SWEET16 overexpression on various critical plant traits, and imply that SWEET16 activity must be tightly regulated to allow optimal Arabidopsis development under nonfavorable conditions. PMID:24028846

  14. The use of hot and cold high pressure homogenization to enhance the loading capacity and encapsulation efficiency of nanostructured lipid carriers for the hydrophilic antiretroviral drug, didanosine for potential administration to paediatric patients.

    PubMed

    Kasongo, Kasongo Wa; Müller, Rainer H; Walker, Roderick B

    2012-01-01

    A major obstacle to the application of nanostructured lipid carriers (NLCs) as carriers for hydrophilic drugs is the limited loading capacity (LC) and encapsulation efficiency (EE) of NLCs for these molecules. The purpose of this research was to design and implement a strategy to enhance the LC and EE of NLCs for the hydrophilic drug, didanosine (DDI). DDI was dispersed in Transcutol(®) HP and the particle size of DDI in the liquid lipid was reduced gradually using hot high pressure homogenization (HPH). The product obtained thereafter was added to Precirol(®) ATO 5 and the hot mixture was immediately dried using liquid nitrogen. The dried materials were then ground and passed through a 200 μm sieve and the solid lipid particles were dispersed in a surfactant solution and subsequently used to manufacture DDI-loaded NLCs using cold HPH. The LC and EE of NLCs for DDI manufactured using the new strategy were 3.39 ± 0.63% and 51.58 ± 1.31%, respectively, compared to 0.079 ± 0.001% and 32.45 ± 0.08%, respectively, obtained when DDI-loaded NLCs were produced using conventional hot HPH. The enhanced LC and EE for DDI make NLCs a potential technology for the oral administration of DDI to paediatric patients. PMID:21241166

  15. The stress corrosion resistance and the cryogenic temperature mechanical properties of hot rolled Nitronic 32 bar material

    NASA Technical Reports Server (NTRS)

    Montano, J. W. L.

    1977-01-01

    The ambient and cryogenic temperature mechanical properties and the ambient temperature stress corrosion properties of hot rolled and centerless ground Nitronic 32 stainless steel bar material are presented. The mechanical properties of longitudinal specimens were evaluated at test temperatures from ambient to liquid hydrogen. The tensile test data indicated increasing smooth tensile strength with decreasing temperature to liquid hydrogen temperature. However, below -200 F (-129.0 C) the notched tensile strength decreased slightly and below -320 F (-196.0 C) the decrease was significant. The elongation and reduction of area decreased drastically at temperatures below -200 F (-129.0 C). The Charpy V-notched impact energy decreased steadily with decreasing test temperature. Stress corrosion tests were performed on longitudinal tensile specimens stressed to 0, 75, and 90 percent of the 0.2 percent yield strength and on transverse 'C'-ring specimens stressed to 75 and 90 percent of the yield strength and exposed to: alternate immersion in a 3.5 percent NaCl bath, humidity cabinet environment, and a 5 percent salt spray atmosphere. The longitudinal tensile specimens experienced no corrosive attack; however, the 'C'-rings exposed to the alternate immersion and to the salt spray experienced some shallow etching and pitting, respectively. Small cracks appeared in two of the 'C'-rings after one month exposure to the salt spray.

  16. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    NASA Astrophysics Data System (ADS)

    Liu, Hsi-Wen; Chang, Ting-Chang; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Kuan-Ju; Lu, Ying-Hsin; Lin, Chien-Yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-04-01

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  17. Stress-and-Strain Analysis Of Hot Metal/Fiber Composites

    NASA Technical Reports Server (NTRS)

    Hopkins, Dale A.; Chamis, Christos C.

    1988-01-01

    Macroscopic mechanical properties derived from micromechanics. Stress-and-strain equations developed to express microscopic and macroscopic mechanical properties of metals reinforced by unidirectional fibers, over range of temperatures. New equations reduce computational load by providing approximate, closed-form expressions for microscopic and pseudohomogeneous anisotropic properties of single ply reinforced by unidirectional fibers. Typical application is calculation of residual stress in newly manufactured article.

  18. A Drude model analysis of conductivity and free carriers in boron-doped diamond films and investigations of their internal stress and strain.

    PubMed

    Manciu, Felicia S; Manciu, Marian; Durrer, William G; Salazar, Jessica G; Lee, Kendall H; Bennet, Kevin E

    2014-08-01

    Boron-doped diamond (BDD) has seen a substantial increase in interest for use as electrode coating material for electrochemistry and studies of deep brain stimulation mechanism. In this study, we present an alternative method for determining important characteristics, including conductivity, carrier concentration, and time constant, of such material by the signature of Drude-like metallic behavior in the far-infrared (IR) spectral range. Unlike the direct determination of conductivity from the four-point probe method, using far-IR transmittance provides additional information, such as whether the incorporation of boron results in a large concentration of carriers or in inducing defects in the diamond lattice. The slightly doped to medium-doped BDD samples that were produced using chemical vapor deposition and analyzed in this work show conductivities ranging between 5.5 and 11 (Ω cm)(-1). Different growth conditions demonstrate that increasing boron concentration results in an increase in the carrier concentration, with values between 7.2 × 10(16) and 2.5 × 10(17) carriers/cm(3). Addition of boron, besides leading to a decrease in the resistivity, also resulted in a decrease in the time constant, limiting BDD conductivity. Investigations, by confocal Raman mapping, of the induced stress in the material due to interaction with the substrate or to the amount of doping are also presented and discussed. The induced tensile stress, which was distributed closer to the film-substrate interface decreased slightly with doping. PMID:25328245

  19. The dependence of permeability on effective stress from flow tests at hot dry rock reservoirs at Rosemanowes (Cornwall) and Fenton Hill (New Mexico)

    USGS Publications Warehouse

    Nathenson, M.

    1999-01-01

    Effective stress is the primary control on permeability and thus on flow and water loss for two-well hot dry rock systems involving injection and production that have been tested to date. Theoretical relations are derived for the flow between an injector and producer, including the dependence of permeability on effective stress. Four relations for permeability as a function of effective stress are used to match field data for the hot dry rock systems at Rosemanowes, Cornwall, and Fenton Hill, New Mexico. The flow and water loss behavior of these systems are well explained by the influence of effective stress on permeability. All four relations for permeability as a function of effective stress are successful in matching the field data, but some have difficulty in determining unique values for elastic and hydrologic parameters.Effective stress is the primary control on permeability and thus on flow and water loss for two-well hot dry rock systems involving injection and production that have been tested to date. Theoretical relations are derived for the flow between an injector and producer, including the dependence of permeability on effective stress. Four relations for permeability as a function of effective stress are used to match field data for the hot dry rock systems at Rosemanowes, Cornwall, and Fenton Hill, New Mexico. The flow and water loss behavior of these systems are well explained by the influence of effective stress on permeability. All four relations for permeability as a function of effective stress are successful in matching the field data, but some have difficulty in determining unique values for elastic and hydrologic parameters.

  20. Stress Drop LED by Twinning during Initial Stage of Hot Compression of Twin-Roll Cast Mg-5.51%Zn-0.49%Zr Alloy

    NASA Astrophysics Data System (ADS)

    Liu, Zhiyi; Xu, Jing; Hou, Yanhui; Kang, Sukbong

    2012-12-01

    Flow stress behavior during initial stage of hot compression of twin-roll cast ZK60 magnesium alloy was characterized by employing deformation temperature of 300°C and 400°C, and a given strain rate of 10-2s-1. A stress drop during initial stage of hot compression at 300°C, generally led by dynamic recrystallization, was found to be attributed to twinning, correspondingly to dynamic recrystallization as deformation temperature was raised to 400°C.

  1. STRESS-INDUCED TRANSMISSON OF 'YERSINIA RUCKERI' INFECTION FROM CARRIERS TO RECIPIENT STEELHEAD TROUT 'SALMO GAIRDNERI' RICHARDSON

    EPA Science Inventory

    The transmission of Yersinia ruckeri has been investigated in steelhead trout using asymptomatic carriers of the causative bacterium of enteric redmouth disease. It was found that unstressed carrier fish did not transmit the bacterium to recipient fish to cause either an epizooti...

  2. Flow Stress Analysis and Hot Bending of P11 Alloy Steel

    NASA Astrophysics Data System (ADS)

    Ma, Fu-ye; Jin, Kai; Wang, Hui; Pei, Wen-Jiao; Tang, Xiao-Bin; Tao, Jie; Guo, Xun-Zhong

    2016-07-01

    Based on the growing application value of the P11 alloy steel in the nuclear power field, its dynamic recrystallization (DRX) behavior was firstly investigated by means of isothermal hot compression experiments, under the conditions of a testing temperature range between 800 and 950 °C, and a strain rate range between 0.01 and 2/s. Furthermore, optical microscopy and transmission electron microscopy were also employed to analyze the effect of the mechanism of the strain rate on DRX. The results indicated that the grain size could be significantly refined with the increase of strain rate. Also, the recrystallized volume fraction was increased and the dislocation density decreased with the decrease of strain rate, for the same strain values. Subsequently, numerical simulations, under the assistance of experimental results on DRX behavior, were successfully used to study the hot push bending process and simultaneously obtain the processing parameters of the actual work-pieces. Finally, some comparative analyses were performed and discussed in parallel with the deformed actual work-pieces. The EBSD results on the deformed P11 alloy steel were emphasized for exploring the forming properties of this alloy steel.

  3. Thermal and stress analysis of hot isostatically pressed, alumina ceramic, nuclear waste containers

    SciTech Connect

    Chang, Yun; Hoenig, C.L.

    1990-03-01

    The Yucca Mountain Project is studying design and fabrication options for a safe durable container in which to store nuclear waste underground at Yucca Mountain, Nevada. The ceramic container discussed here is an alternative to using a metal container. This ceramic alternative would be selected if site conditions prove too corrosive to use metals for nuclear waste storage. Some of the engineering problems addressed in this study were: the stress generated in the alumina container by compressive loads when 4000 to 40,000 psi of external pressure is applied; the thermal stress in the container during the heating and cooling processes; the temperature histories of the container in various production scenarios and the power required for typical heaters; the fastest possible turnaround time to heat, seal, and cool the container commensurate with preserving the structural integrity of the ceramic and the closure; the testing of some commercial heating elements to determine the maximum available heat output; and the trade-offs between the minimization in thermal stress and cycle time for closure. 2 refs., 23 figs., 2 tabs.

  4. A study on the mechanism of stress corrosion cracking of duplex stainless steels in hot alkaline-sulfide solution

    NASA Astrophysics Data System (ADS)

    Chasse, Kevin Robert

    Duplex stainless steels (DSS) generally have superior strength and corrosion resistance as compared to most standard austenitic and ferritic stainless grades owing to a balanced microstructure of austenite and ferrite. As a result of having favorable properties, DSS have been selected for the construction of equipment in pulp and paper, chemical processing, nuclear, oil and gas as well as other industries. The use of DSS has been restricted in some cases because of stress corrosion cracking (SCC), which can initiate and grow in either the ferrite or austenite phase depending on the environment. Thorough understanding of SCC mechanisms of DSS in chloride- and hydrogen sulfide-containing solutions has been useful for material selection in many environments. However, understanding of SCC mechanisms of DSS in sulfide-containing caustic solutions is limited, which has restricted the capacity to optimize process and equipment design in pulp and paper environments. Process environments may contain different concentrations of hydroxide, sulfide, and chloride, altering corrosion and SCC susceptibility of each phase. Crack initiation and growth behavior will also change depending on the relative phase distribution and properties of austenite and ferrite. The role of microstructure and environment on the SCC of standard grade UNS S32205 and lean grade UNS S32101 in hot alkaline-sulfide solution were evaluated in this work using electrochemical, film characterization, mechanical testing, X-ray diffraction, and microscopy techniques. Microstructural aspects, which included residual stress state, phase distribution, phase ratio, and microhardness, were related to the propensity for SCC crack initiation in different simulated alkaline pulping liquors at 170 °C. Other grades of DSS and reference austenitic and superferritic grades of stainless steel were studied using exposure coupons for comparison to understand compositional effects and individual phase susceptibility

  5. The effects of hot carrier and swift heavy ion irradiation on electrical characteristics of advanced 200 GHz SiGe HBTs

    NASA Astrophysics Data System (ADS)

    Vinayakprasanna, N. H.; Praveen, K. C.; Cressler, J. D.; Prakash, A. P. Gnana

    2016-05-01

    The 200 GHz SiGe HBTs were irradiated with 80 MeV Carbon ions up to a total dose of 100 Mrad to understand the degradation in electrical characteristics. The degradation in the electrical characteristics of SiGe HBTs was also studied by mixed mode electrical stress up to 10,000 s. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak hFE of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and total dose.

  6. Stable over-expression of the 2-oxoglutarate carrier enhances neuronal cell resistance to oxidative stress via Bcl-2-dependent mitochondrial GSH transport.

    PubMed

    Wilkins, Heather M; Brock, Samantha; Gray, Josie J; Linseman, Daniel A

    2014-07-01

    Mitochondrial glutathione (GSH) is a key endogenous antioxidant and its maintenance is critical for cell survival. Here, we generated stable NSC34 motor neuron-like cell lines over-expressing the mitochondrial GSH transporter, the 2-oxoglutarate carrier (OGC), to further elucidate the importance of mitochondrial GSH transport in determining neuronal resistance to oxidative stress. Two stable OGC cell lines displayed specific increases in mitochondrial GSH content and resistance to oxidative and nitrosative stressors, but not staurosporine. Inhibition of transport through OGC reduced levels of mitochondrial GSH and resensitized the stable cell lines to oxidative stress. The stable OGC cell lines displayed significant up-regulation of the anti-apoptotic protein, B cell lymphoma 2 (Bcl-2). This result was reproduced in parental NSC34 cells by chronic treatment with GSH monoethylester, which specifically increased mitochondrial GSH levels. Knockdown of Bcl-2 expression decreased mitochondrial GSH and resensitized the stable OGC cells to oxidative stress. Finally, endogenous OGC was co-immunoprecipitated with Bcl-2 from rat brain lysates in a GSH-dependent manner. These data are the first to show that increased mitochondrial GSH transport is sufficient to enhance neuronal resistance to oxidative stress. Moreover, sustained and specific enhancement of mitochondrial GSH leads to increased Bcl-2 expression, a required mechanism for the maintenance of increased mitochondrial GSH levels. Stable over-expression of the 2-oxoglutarate carrier (OGC) in a motor neuronal cell line induced a specific increase in mitochondrial GSH and markedly enhanced resistance to oxidative stress. Over-expression of OGC also induced Bcl-2 expression which was owing to the specific increase in mitochondrial GSH. Intriguingly, enhanced expression of Bcl-2 was required to sustain OGC-dependent GSH transport into the mitochondria. Thus, OGC and Bcl-2 work in a concerted manner to maintain the

  7. Stable over-expression of the 2-oxoglutarate carrier enhances neuronal cell resistance to oxidative stress via Bcl-2-dependent mitochondrial GSH transport

    PubMed Central

    Wilkins, Heather M.; Brock, Samantha; Gray, Josie J.; Linseman, Daniel A.

    2015-01-01

    Mitochondrial glutathione (GSH) is a key endogenous antioxidant and its maintenance is critical for cell survival. Here, we generated stable NSC34 motor neuron-like cell lines over-expressing the mitochondrial GSH transporter, the 2-oxoglutarate carrier (OGC), to further elucidate the importance of mitochondrial GSH transport in determining neuronal resistance to oxidative stress. Two stable OGC cell lines displayed specific increases in mitochondrial GSH content and resistance to oxidative and nitrosative stressors, but not staurosporine. Inhibition of transport through OGC reduced levels of mitochondrial GSH and resensitized the stable cell lines to oxidative stress. The stable OGC cell lines displayed significant up-regulation of the anti-apoptotic protein, B cell lymphoma 2 (Bcl-2). This result was reproduced in parental NSC34 cells by chronic treatment with GSH monoethylester, which specifically increased mitochondrial GSH levels. Knockdown of Bcl-2 expression decreased mitochondrial GSH and resensitized the stable OGC cells to oxidative stress. Finally, endogenous OGC was co-immunoprecipitated with Bcl-2 from rat brain lysates in a GSH-dependent manner. These data are the first to show that increased mitochondrial GSH transport is sufficient to enhance neuronal resistance to oxidative stress. Moreover, sustained and specific enhancement of mitochondrial GSH leads to increased Bcl-2 expression, a required mechanism for the maintenance of increased mitochondrial GSH levels. PMID:24606213

  8. Effect of internal heating during hot compression testing on the stress-strain behavior and hot working characteristics of Alloy 304L

    SciTech Connect

    Mataya, M.C.; Sackschewsky, V.E.

    1993-05-01

    Temperature change from conversion of deformation to internal heat, and its effect on stress-strain behavior of alloy 304L was investigated by initially isothermal (temperature of specimen, compression dies, environment equilibrated at initiation of test) uniaxial compression. Strain rate was varied 0.01 s{sup {minus}1} to 1 s{sup {minus}1} (thermal state of specimen varied from nearly isothermal to nearly adiabatic). Specimens were deformed at 750 to 1150 to a strain of 1. Change in temperature with strain was calculated via finite element analysis from measured stress-strain data and predictions were confirmed with thermocouples to verify the model. Temperature increased nearly linearly at the highest strain rate, consistent with temperature rise being a linear function of strain (adiabatic). As strain rate was lowered, heat transfer from superheated specimen to cooler dies caused sample temperature to increase and then decrease with strain as the sample thinned and specimen-die contact area increased. As-measured stress was corrected. Resulting isothermal flow curves were compared to predictions of a simplified method suggested by Thomas and Shrinivasan and differences are discussed. Strain rate sensitivity, activation energy for deformation, and flow curve peak associated with onset of dynamic recrystallization were determined from both as-measured and isothermal stress-strain data and found to vary widely. The impact of utilizing as-measured stress-strain data, not corrected for internal heating, on results of a number of published investigations is discussed.

  9. Gelatin Nanostructured Lipid Carriers Incorporating Nerve Growth Factor Inhibit Endoplasmic Reticulum Stress-Induced Apoptosis and Improve Recovery in Spinal Cord Injury.

    PubMed

    Zhu, Si-Pin; Wang, Zhou-Guang; Zhao, Ying-Zheng; Wu, Jiang; Shi, Hong-Xue; Ye, Li-Bing; Wu, Fen-Zan; Cheng, Yi; Zhang, Hong-Yu; He, Songbin; Wei, Xiaojie; Fu, Xiao-Bing; Li, Xiao-Kun; Xu, Hua-Zi; Xiao, Jian

    2016-09-01

    Clinical translation of growth factor therapies faces multiple challenges; the most significant one is the short half-life of the naked protein. Gelatin nanostructured lipid carriers (GNLs) had previously been used to encapsulate the basic fibroblast growth factor to enhance the functional recovery in hemiparkinsonian rats. In this research, we comparatively study the enhanced therapy between nerve growth factor (NGF) loaded GNLs (NGF-GNLs) and NGF only in spinal cord injury (SCI). The effects of NGF-GNLs and NGF only were tested by the Basso-Beattie-Bresnahan (BBB) locomotion scale, inclined plane test, and footprint analysis. Western blot analysis and immunofluorescent staining were further performed to identify the expression of ER stress-related proteins, neuron-specific marker neuronal nuclei (NeuN), and growth-associated protein 43 (GAP43). Correlated downstream signals Akt/GSK-3β and ERK1/2 were also analyzed with or without inhibitors. Results showed that NGF-GNLs, compared to NGF only, enhanced the neuroprotection effect in SCI rats. The ER stress-induced apoptosis response proteins CHOP, GRP78 and caspase-12 inhibited by NGF-GNL treatment were more obvious. Meanwhile, NGF-GNLs in the recovery of SCI are related to the inhibition of ER stress-induced cell death via the activation of downstream signals PI3K/Akt/GSK-3β and ERK1/2. PMID:26232067

  10. Charge Pumping Profiling Technique for the Evaluation of Plasma-Charging-Enhanced Hot-Carrier Effect in Short-N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Chen, Shang-Jr; Chung, Steve Shao-Shiun; Lin, Horng-Chih

    2002-07-01

    Plasma etching of poly-silicon in a metal-oxide-semiconductor field-effect transistor (MOSFET) during the gate definition process induces edge damage at the gate-drain overlap edge. This edge damage will be further enhanced by the antenna effect and cause a more serious hot-carrier (HC) effect, particularly in short-channel devices. We call this phenomenon the plasma-charging-enhanced HC effect. In this paper, this plasma-charging-enhanced HC effect is evaluated by the charge pumping (CP) profiling technique, in which the enhanced damage at the gate-drain overlap gate oxide region can be identified. A three-phase plasma damage mechanism is then proposed to explain the observed effect. According to experimental results, it was shown that the interface traps generated at the gate-drain overlap edge are mainly attributed to the plasma-charging-enhanced HC effect. These interface traps (Nit) become the dominant mechanism of the drain current (ID) degradation, which increases with a reducing channel length (L). Again, the enhanced HC-effect-induced-degradation will dominate the device reliability under long-term operations.

  11. Flow stress and microstructural evolution during hot working of alloy 22Cr-13Ni-5Mn-0.3N austenitic stainless steel

    SciTech Connect

    Mataya, M.C.; Perkins, C.A.; Thompson, S.W.; Matlock, D.K.

    1996-05-01

    The stress-strain behavior and the development of microstructure between 850 C and 1,150 C in an austenitic stainless steel, 22Cr-13Ni-5Mn-0.3N, were investigated by uniaxial compression of cylindrical specimens at strain rates between 0.01 and 1 s{sup {minus}1} up to a strain of one. The measured (anisothermal) and corrected (isothermal) flow curves were distinctly different. The flow stress at moderate hot working temperatures, compared to a number of other austenitic alloys, was second only to that of alloy 718. Both static and dynamic recrystallization were observed. Recrystallization was sluggish in comparison to alloy 304L, apparently due to the presence of a fine Cr- and Nb-rich second-phase dispersion, identified as Z phase, which tended to pin the high-angle grain boundaries even at a high temperature of 1,113 C. Recrystallization may also be retarded by preferential restoration through the competitive process of recovery, which is consistent with the relatively high stacking-fault energy for this alloy. It is concluded that this alloy must be hot worked at temperatures higher than usual for austenitic stainless steels in order to minimize flow stress and refine grain size.

  12. Heat shock transcription factors expression during fruit development and under hot air stress in Ponkan (Citrus reticulata Blanco cv. Ponkan) fruit.

    PubMed

    Lin, Qiong; Jiang, Qing; Lin, Juanying; Wang, Dengliang; Li, Shaojia; Liu, Chunrong; Sun, Chongde; Chen, Kunsong

    2015-04-01

    Heat shock transcription factors (Hsfs) play a role in plant responses to stress. Citrus is an economically important fruit whose genome has been fully sequenced. So far, no detailed characterization of the Hsf gene family is available for citrus. A genome-wide analysis was carried out in Citrus clementina to identify Hsf genes, named CcHsfs. Eighteen CcHsfs were identified and classified into three main clades (clades A, B and C) according to the structural characteristics and the phylogenetic comparison with Arabidopsis and tomato. MEME motif analysis highlighted the conserved DBD and HR-A/B domains, which were similar to Hsf protein structures in other species. Gene expression analysis in Ponkan (Citrus reticulata Blanco cv. Ponkan) fruit identified 14 Hsf genes, named CrHsf, as important candidates for a role in fruit development and ripening, and showed seven genes to be expressed in response to hot air stress. CrHsfB2a and CrHsfB5 were considered to be important regulators of citrate content and showed variation in both developmentally-related and hot air-triggered citrate degradation processes. In summary, the data obtained from this investigation provides the basis for further study to dissect Hsf function during fruit development as well as in response to heat stress and also emphasizes the potential importance of CrHsfs in regulation of citrate metabolism in citrus fruit. PMID:25596345

  13. Stress control of seismicity patterns observed during hydraulic fracturing experiments at the Fenton Hill hot dry rock geothermal energy site, New Mexico

    SciTech Connect

    Fehler, M.C.

    1987-04-13

    Seismicity accompanying hydraulic injections into granitic rock is often diffuse rather than falling along a single plane. This diffuse zone of seismicity cannot be attributed to systematic errors in locations of the events. It has often been asserted that seismicity occurs along preexisting joints in the rock that are favorably aligned with the stress field so that slip can occur along them when effective stress is reduced by increasing pore fluid pressure. A new scheme for determining orientations and locations of planes along which the microearthquakes occurred was recently developed. The basic assumption of the method, called the three point method, is that many of the events fall along well defined planes; these planes are often difficult to identify visually in the data because planes of many orientations are present. The method has been applied to four hydraulic fracturing experiments conducted at Fenton Hill as part of a hot dry rock geothermal energy project. While multiple planes are found for each experiment; one plane is common to all experiments. The ratio of shear to normal stress along planes of all orientations is calculated using a best estimate of the current stress state at Fenton Hill. The plane common to all experiments has the highest ratio of shear to normal stress acting along it, so it is the plane most likely to slip. The other planes found by the three point method all have orientations with respect to current principal stresses that are favorable for slip to occur along preexisting planes of weakness. These results are consistent with the assertion that the rock contains pre-existing joints which slip when the effective stress is reduced by the increased pore fluid pressure accompanying the hydraulic injection. Microearthquakes occur along those planes that are favorably aligned with respect to the current stress field.

  14. Fluorine Implantation and Residual Stresses in Polysilicon Films

    NASA Technical Reports Server (NTRS)

    Lowery, Lynn; Zschack, Paul; Angelis, Robert De

    1994-01-01

    As microelectronic device dimensions are reduced below one micron, the hot carrier effect is a major barrier to continued scaling and VLSI reliability. Several reports have shown that fluorine diffusion into the device gate greatly enhances the resistance to hot carriers. There has been some disagreement as to the mechanism of influence; however, several reports have suggested that the polysilicon is physically modified by the fluorine implant and that the beneficial effects are at least in part due to stress relaxation in the polysilicon.

  15. Impact of doping on the carrier dynamics in graphene

    PubMed Central

    Kadi, Faris; Winzer, Torben; Knorr, Andreas; Malic, Ermin

    2015-01-01

    We present a microscopic study on the impact of doping on the carrier dynamics in graphene, in particular focusing on its influence on the technologically relevant carrier multiplication in realistic, doped graphene samples. Treating the time- and momentum-resolved carrier-light, carrier-carrier, and carrier-phonon interactions on the same microscopic footing, the appearance of Auger-induced carrier multiplication up to a Fermi level of 300 meV is revealed. Furthermore, we show that doping favors the so-called hot carrier multiplication occurring within one band. Our results are directly compared to recent time-resolved ARPES measurements and exhibit an excellent agreement on the temporal evolution of the hot carrier multiplication for n- and p-doped graphene. The gained insights shed light on the ultrafast carrier dynamics in realistic, doped graphene samples. PMID:26577536

  16. CaPUB1, a Hot Pepper U-box E3 Ubiquitin Ligase, Confers Enhanced Cold Stress Tolerance and Decreased Drought Stress Tolerance in Transgenic Rice (Oryza sativa L.).

    PubMed

    Min, Hye Jo; Jung, Ye Jin; Kang, Bin Goo; Kim, Woo Taek

    2016-03-01

    Abiotic stresses such as drought and low temperature critically restrict plant growth, reproduction, and productivity. Higher plants have developed various defense strategies against these unfavorable conditions. CaPUB1 (Capsicum annuum Putative U-box protein 1) is a hot pepper U-box E3 Ub ligase. Transgenic Arabidopsis plants that constitutively expressed CaPUB1 exhibited drought-sensitive phenotypes, suggesting that it functions as a negative regulator of the drought stress response. In this study, CaPUB1 was over-expressed in rice (Oryza sativa L.), and the phenotypic properties of transgenic rice plants were examined in terms of their drought and cold stress tolerance. Ubi:CaPUB1 T3 transgenic rice plants displayed phenotypes hypersensitive to dehydration, suggesting that its role in the negative regulation of drought stress response is conserved in dicot Arabidopsis and monocot rice plants. In contrast, Ubi:CaPUB1 progeny exhibited phenotypes markedly tolerant to prolonged low temperature (4°C) treatment, compared to those of wild-type plants, as determined by survival rates, electrolyte leakage, and total chlorophyll content. Cold stress-induced marker genes, including DREB1A, DREB1B, DREB1C, and Cytochrome P450, were more up-regulated by cold treatment in Ubi:CaPUB1 plants than in wild-type plants. These results suggest that CaPUB1 serves as both a negative regulator of the drought stress response and a positive regulator of the cold stress response in transgenic rice plants. This raises the possibility that CaPUB1 participates in the cross-talk between drought and low-temperature signaling pathways. PMID:26674966

  17. CaPUB1, a Hot Pepper U-box E3 Ubiquitin Ligase, Confers Enhanced Cold Stress Tolerance and Decreased Drought Stress Tolerance in Transgenic Rice (Oryza sativa L.)

    PubMed Central

    Min, Hye Jo; Jung, Ye Jin; Kang, Bin Goo; Kim, Woo Taek

    2016-01-01

    Abiotic stresses such as drought and low temperature critically restrict plant growth, reproduction, and productivity. Higher plants have developed various defense strategies against these unfavorable conditions. CaPUB1 (Capsicum annuum Putative U-box protein 1) is a hot pepper U-box E3 Ub ligase. Transgenic Arabidopsis plants that constitutively expressed CaPUB1 exhibited drought-sensitive phenotypes, suggesting that it functions as a negative regulator of the drought stress response. In this study, CaPUB1 was over-expressed in rice (Oryza sativa L.), and the phenotypic properties of transgenic rice plants were examined in terms of their drought and cold stress tolerance. Ubi:CaPUB1 T3 transgenic rice plants displayed phenotypes hypersensitive to dehydration, suggesting that its role in the negative regulation of drought stress response is conserved in dicot Arabidopsis and monocot rice plants. In contrast, Ubi:CaPUB1 progeny exhibited phenotypes markedly tolerant to prolonged low temperature (4°C) treatment, compared to those of wild-type plants, as determined by survival rates, electrolyte leakage, and total chlorophyll content. Cold stress-induced marker genes, including DREB1A, DREB1B, DREB1C, and Cytochrome P450, were more up-regulated by cold treatment in Ubi:CaPUB1 plants than in wild-type plants. These results suggest that CaPUB1 serves as both a negative regulator of the drought stress response and a positive regulator of the cold stress response in transgenic rice plants. This raises the possibility that CaPUB1 participates in the cross-talk between drought and low-temperature signaling pathways. PMID:26674966

  18. The role of hydrogen in stress-corrosion cracking of austenitic stainless steel in hot MgCl{sub 2} solution

    SciTech Connect

    Qiao, L.; Mao, X.; Chu, W.

    1995-07-01

    The role of hydrogen in stress-corrosion cracking (SCC) of austenitic stainless steel was investigated in boiling chloride solution. The tests in the mixed melted salt verified that hydrogen-induced cracking (HIC) could occur at 160 C if sufficient hydrogen could be supplied continuously. It was found that the threshold SCC intensity factors of both 321 and 310 steels were lower than those of HIC during dynamic charging at high fugacity at 40 C and 160 C. In addition, anodic polarization decreased hydrogen concentration and promoted SCC in hot LiCl solution, while cathodic polarization increased hydrogen concentration and restrained SCC. Hydrogen could be introduced into the specimen and be concentrated at the crack tip during SCC. It could promote anodic dissolution and SCC remarkably, although it was not enough to produce cracking.

  19. On noise sources in hot electron-degraded bipolar junction transistors

    NASA Astrophysics Data System (ADS)

    Llinares, P.; Ghibaudo, G.; Chroboczek, J. A.

    1997-09-01

    The effects of electrical stress on static characteristics and power spectral density, SIb, of base current, Ib, fluctuations at low frequencies, f<1 kHz, have been studied in quasiself-aligned bipolar n-p-n junction. In as-fabricated devices SIb∝1/AE, where AE is the transistor emitter area, whereas in strongly degraded transistors Sib∝1/PE, where PE is the transistor perimeter. The latter demonstrates directly that hot carrier-induced noise sources are generated at the periphery of the transistors, in agreement with former work on hot electron-induced aging of bipolar junction transistors.

  20. Do Mitochondria Limit Hot Fish Hearts? Understanding the Role of Mitochondrial Function with Heat Stress in Notolabrus celidotus

    PubMed Central

    Iftikar, Fathima I.; Hickey, Anthony J. R.

    2013-01-01

    Hearts are the first organs to fail in animals exposed to heat stress. Predictions of climate change mediated increases in ocean temperatures suggest that the ectothermic heart may place tight constraints on the diversity and distribution of marine species with cardiovascular systems. For many such species, their upper temperature limits (Tmax) and respective heart failure (HF) temperature (THF) are only a few degrees from current environmental temperatures. While the ectothermic cardiovascular system acts as an “ecological thermometer,” the exact mechanism that mediates HF remains unresolved. We propose that heat-stressed cardiac mitochondria drive HF. Using a common New Zealand fish, Notolabrus celidotus, we determined the THF (27.5°C). Haemoglobin oxygen saturation appeared to be unaltered in the blood surrounding and within heat stressed hearts. Using high resolution respirometry coupled to fluorimeters, we explored temperature-mediated changes in respiration, ROS and ATP production, and overlaid these changes with THF. Even at saturating oxygen levels several mitochondrial components were compromised before THF. Importantly, the capacity to efficiently produce ATP in the heart is limited at 25°C, and this is prior to the acute THF for N. celidotus. Membrane leakiness increased significantly at 25°C, as did cytochrome c release and permeability to NADH. Maximal flux rates and the capacity for the electron transport system to uncouple were also altered at 25°C. These data indicate that mitochondrial membrane integrity is lost, depressing ATP synthesis capacity and promoting cytochrome c release, prior to THF. Mitochondria can mediate HF in heat stressed hearts in fish and play a significant role in thermal stress tolerance, and perhaps limit species distributions by contributing to HF. PMID:23724026

  1. Simulating thermal stress features on hot planetary surfaces in vacuum at high temperature facility in the PEL laboratory

    NASA Astrophysics Data System (ADS)

    Maturilli, A.; Ferrari, S.; Helbert, J.; D'Incecco, P.; D'Amore, M.

    2011-12-01

    In the Planetary Emissivity Laboratory (PEL) at the Institute for Planetary Research of the German Aerospace Center (DLR) in Berlin, we set-up a simulation chamber for the spectroscopic investigation of minerals separates under Mercurial conditions. The chamber can be evacuated to 10-4 bar and the target samples heated to 700 K within few minutes, thanks to the innovative inductive heating system. While developing the protocol for the high temperature spectroscopy measurements we discovered interesting "morphologies" on the sample surfaces. The powders are poured into stainless steel cups of 50 mm internal diameter, 8 mm height and 3 mm depth, having a 5 mm thick base (thus leaving 3 mm free space for the minerals), and rim 1 mm thick. We selected several minerals of interest for Mercurial surface composition and for each of them we analyzed various grain size separates, to study the influence of grain dimensions to the process of thermal stressing. We observed that for the smaller grain size separate (0-25 μm) the thermal stress mainly induces large depressions and fractures, while on larger grain sizes (125-250 μm) small depressions and a cratered surface. Our current working hypothesis is that these features are mainly caused by thermal stress induced by a radiatively quickly cooling surface layer covering the much hotter bulk material. Further investigation is ongoing to understand the processes better. The observed morphologies exhibit surprising similarities to features observed at planetary scale size for example on Mercury and even on Venus. Especially the high resolution images provided currently from MESSENGER'S Mercury Dual Imaging System (MDIS) instrument has revealed plains dominated by polygonal fractures whose origin still have to be determined. Our laboratory analogue studies might in the future provide some insight into the processes creating those features

  2. Hot Deformation Behavior and Flow Stress Prediction of TC4-DT Alloy in Single-Phase Region and Dual-Phase Regions

    NASA Astrophysics Data System (ADS)

    Liu, Jianglin; Zeng, Weidong; Zhu, Yanchun; Yu, Hanqing; Zhao, Yongqing

    2015-05-01

    Isothermal compression tests of TC4-DT titanium alloy at the deformation temperature ranging from 1181 to 1341 K covering α + β phase field and β-phase field, the strain rate ranging from 0.01 to 10.0 s-1 and the height reduction of 70% were conducted on a Gleeble-3500 thermo-mechanical simulator. The experimental true stress-true strain data were employed to develop the strain-compensated Arrhenius-type flow stress model and artificial neural network (ANN) model; the predictability of two models was quantified in terms of correlation coefficient ( R) and average absolute relative error (AARE). The R and AARE for the Arrhenius-type flow stress model were 0.9952 and 5.78%, which were poorer linear relation and more deviation than 0.9997 and 1.04% for the feed-forward back-propagation ANN model, respectively. The results indicated that the trained ANN model was more efficient and accurate in predicting the flow behavior for TC4-DT titanium alloy at elevated temperature deformation than the strain-compensated Arrhenius-type constitutive equations. The constitutive relationship compensating strain could track the experimental data across the whole hot working domain other than that at high strain rates (≥1 s-1). The microstructure analysis illustrated that the deformation mechanisms existed at low strain rates (≤0.1 s-1), where dynamic recrystallization occurred, were far different from that at high strain rates (≥1 s-1) that presented bands of flow localization and cracking along grain boundary.

  3. Ultrafast carriers dynamics in filled-skutterudites

    SciTech Connect

    Guo, Liang; Xu, Xianfan; Salvador, James R.

    2015-06-08

    Carrier dynamics of filled-skutterudites, an important class of thermoelectric materials, is investigated using ultrafast optical spectroscopy. By tuning the wavelength of the probe laser, charge transfers at different electronic energy levels are interrogated. Analysis based on the Kramers-Kronig relation explains the complex spectroscopy data, which is mainly due to band filling caused by photo-excited carriers and free carrier absorption. The relaxation time of hot carriers is found to be about 0.4–0.6 ps, depending on the electronic energy level, and the characteristic time for carrier-phonon equilibrium is about 0.95 ps. These studies of carrier dynamics, which fundamentally determines the transport properties of thermoelectric material, can provide guidance for the design of materials.

  4. A micro-scale hot wire anemometer based on low stress (Ni/W) multi-layers deposited on nano-crystalline diamond for air flow sensing

    NASA Astrophysics Data System (ADS)

    Talbi, A.; Gimeno, L.; Gerbedoen, J.-C.; Viard, R.; Soltani, A.; Mortet, V.; Preobrazhensky, V.; Merlen, A.; Pernod, P.

    2015-12-01

    A linear array of microscale thermal anemometers has been designed, fabricated and characterized. The sensitive element consists of a self-compensated-stress multilayer (Ni/W) patterned to form a wire with length, width, and thickness close to 200 μm, 5 μm and 2 μm respectively. The wire is deposited and supported by prongs made of nano-crystalline diamond (NCD) of about 2 μm in thickness. Due to its high Young’s modulus, NCD allows a very high mechanical toughness without the need for thicker support for the hot wire. Also, depending on grain size, the NCD is able to present thermal conductivity smaller than 10 W mK-1, providing good thermal insulation from the substrate and less conductive end losses to the prongs. The sensor was characterized experimentally. Its electrical and thermal properties were obtained first in the absence of fluid flow. The results confirm the effectiveness of thermal insulation and the mechanical robustness of the structure. The fluidic characterizations were performed and analysed in the case of an airflow with velocities of up to 30 m s-1.

  5. Effects of Visible Light and UV Radiation on Photosynthesis in a Population of a Hot Spring Cyanobacterium, a Synechococcus sp., Subjected to High-Temperature Stress

    PubMed Central

    Miller, Scott R.; Wingard, Christopher E.; Castenholz, Richard W.

    1998-01-01

    Assays of photosynthesis were conducted with a biofilm population of a cyanobacterium, a Synechococcus sp., growing at ∼70°C in a Yellowstone National Park hot spring to test whether cells growing near the upper temperature limit of photosynthetic life are optimally adapted to their mean environmental temperature. Cell suspensions were assayed at 70, 65, and 55°C while being simultaneously exposed to modified solar environments, including reduction of total irradiance and exclusion of UV radiation. Carbon fixation was greatest at 65°C, while 70 and 55°C were always supraoptimal and suboptimal for photosynthesis, respectively. The degree of temperature stress was dependent upon light intensity, and this light-dependent temperature effect may involve both reduced quantum efficiency at subsaturating irradiances and a lower saturating irradiance at both supraoptimal and suboptimal temperatures. The Synechococcus sp. was also more susceptible to UV inhibition of photosynthesis at nonoptimal temperatures. These results suggest that this population is persisting at a nearly lethal temperature and is consequently subject to greater damage by both visible and UV radiation, but it is speculated that these cells may be avoiding competition with other photoautotrophs under these nonoptimal conditions. In separate experiments monitoring diurnal patterns of photosynthesis, cells exhibited peak productivity during the morning, followed by an afternoon decline. No recovery of photosynthesis was observed during the remaining daytime, and carbon fixation was always UV inhibited under conditions of photosynthetically saturating light. PMID:9758816

  6. Stress

    MedlinePlus

    ... sudden negative change, such as losing a job, divorce, or illness Traumatic stress, which happens when you ... stress, so you can avoid more serious health effects. NIH: National Institute of Mental Health

  7. Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

    SciTech Connect

    Brazzini, Tommaso Sun, Huarui; Uren, Michael J.; Kuball, Martin; Casbon, Michael A.; Lees, Jonathan; Tasker, Paul J.; Jung, Helmut; Blanck, Hervé

    2015-05-25

    Hot electrons in AlGaN/GaN high electron mobility transistors are studied during radio frequency (RF) and DC operation by means of electroluminescence (EL) microscopy and spectroscopy. The measured EL intensity is decreased under RF operation compared to DC at the same average current, indicating a lower hot electron density. This is explained by averaging the DC EL intensity over the measured load line used in RF measurements, giving reasonable agreement. In addition, the hot electron temperature is lower by up to 15% under RF compared to DC, again at least partially explainable by the weighted averaging along the specific load line. However, peak electron temperature under RF occurs at high V{sub DS} and low I{sub DS} where EL is insignificant suggesting that any wear-out differences between RF and DC stress of the devices will depend on the balance between hot-carrier and field driven degradation mechanisms.

  8. Tunable carrier multiplication and cooling in graphene.

    PubMed

    Johannsen, Jens Christian; Ulstrup, Søren; Crepaldi, Alberto; Cilento, Federico; Zacchigna, Michele; Miwa, Jill A; Cacho, Cephise; Chapman, Richard T; Springate, Emma; Fromm, Felix; Raidel, Christian; Seyller, Thomas; King, Phil D C; Parmigiani, Fulvio; Grioni, Marco; Hofmann, Philip

    2015-01-14

    Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly (n-)doped graphene, we observe larger carrier multiplication factors (>3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less (p-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphene's dynamical response to a photoexcitation. PMID:25458168

  9. What Is Carrier Screening?

    MedlinePlus

    ... you want to learn. Search form Search Carrier screening You are here Home Testing & Services Testing for ... help you make the decision. What Is Carrier Screening? Carrier screening checks if a person is a " ...

  10. The ''hot'' patella

    SciTech Connect

    Kipper, M.S.; Alazraki, N.P.; Feiglin, D.H.

    1982-01-01

    Increased patellar uptake on bone scans is seen quite commonly but the possible or probable etiologies of this finding have not been previously well described. A review of 100 consecutive bone scans showed that the incidence of bilateral ''hot'' patellae is 15%. Identified etiologies include osteoarthritic degenerative disease (35%), fracture, possible metastatic disease, bursitis, Paget's disease, and osteomyelitis. The value of careful history, physical examination, and radiographs is stressed.

  11. Silicon ball grid array chip carrier

    DOEpatents

    Palmer, David W.; Gassman, Richard A.; Chu, Dahwey

    2000-01-01

    A ball-grid-array integrated circuit (IC) chip carrier formed from a silicon substrate is disclosed. The silicon ball-grid-array chip carrier is of particular use with ICs having peripheral bond pads which can be reconfigured to a ball-grid-array. The use of a semiconductor substrate such as silicon for forming the ball-grid-array chip carrier allows the chip carrier to be fabricated on an IC process line with, at least in part, standard IC processes. Additionally, the silicon chip carrier can include components such as transistors, resistors, capacitors, inductors and sensors to form a "smart" chip carrier which can provide added functionality and testability to one or more ICs mounted on the chip carrier. Types of functionality that can be provided on the "smart" chip carrier include boundary-scan cells, built-in test structures, signal conditioning circuitry, power conditioning circuitry, and a reconfiguration capability. The "smart" chip carrier can also be used to form specialized or application-specific ICs (ASICs) from conventional ICs. Types of sensors that can be included on the silicon ball-grid-array chip carrier include temperature sensors, pressure sensors, stress sensors, inertia or acceleration sensors, and/or chemical sensors. These sensors can be fabricated by IC processes and can include microelectromechanical (MEM) devices.

  12. Managing photons and carriers for photocatalysis

    NASA Astrophysics Data System (ADS)

    Thomann, Isabell; Robatjazi, Hossein; Bahauddin, Shah; Doiron, Chloe; Liu, Xuejun; Tumkur, Thejaswi; Wang, Wei-Ren; Wray, Parker

    While small plasmonic nanoparticles efficiently generate energetic hot carriers, light absorption in a monolayer of such particles is inefficient, and practical utilization of the hot carriers in addition requires efficient charge-separation. Here we describe our approach to address both challenges. By designing an optical cavity structure for the plasmonic photoelectrode, light absorption in these particles can be significantly enhanced, resulting in efficient hot electron generation. Rather than utilizing a Schottky barrier to preserve the energy of the carriers, our structure allows for their direct injection into the adjacent electrolyte. On the substrate side, the plasmonic particles are in contact with a wide band gap oxide film that serves as an electron blocking layer but accepts holes and transfers them to the counter electrode. The observed photocurrent spectra follow the plasmon spectrum, and demonstrate that the extracted electrons are energetic enough to drive the hydrogen evolution reaction. A similar structure can be designed to achieve broadband absorption enhancement in monolayer MoS2. Time permitting, I will discuss charge carrier dynamics in hybrid nanoparticles composed of plasmonic / two-dimensional materials, and applications of photo-induced force microscopy to study photocatalytic processes.

  13. Cooling of hot electrons in amorphous silicon

    SciTech Connect

    Vanderhaghen, R.; Hulin, D.; Cuzeau, S.; White, J.O.

    1997-07-01

    Measurements of the cooling rate of hot carriers in amorphous silicon are made with a two-pump, one-probe technique. The experiment is simulated with a rate-equation model describing the energy transfer between a population of hot carriers and the lattice. An energy transfer rate proportional to the temperature difference is found to be consistent with the experimental data while an energy transfer independent of the temperature difference is not. This contrasts with the situation in crystalline silicon. The measured cooling rates are sufficient to explain the difficulty in observing avalanche effects in amorphous silicon.

  14. Hot Canyon

    ScienceCinema

    None

    2013-03-01

    This historical film footage, originally produced in the early 1950s as part of a series by WOI-TV, shows atomic research at Ames Laboratory. The work was conducted in a special area of the Laboratory known as the "Hot Canyon."

  15. Hot Canyon

    SciTech Connect

    2012-01-01

    This historical film footage, originally produced in the early 1950s as part of a series by WOI-TV, shows atomic research at Ames Laboratory. The work was conducted in a special area of the Laboratory known as the "Hot Canyon."

  16. Hot Tickets

    ERIC Educational Resources Information Center

    Fox, Bette-Lee; Hoffert, Barbara; Kuzyk, Raya; McCormack, Heather; Williams, Wilda

    2008-01-01

    This article describes the highlights of this year's BookExpo America (BEA) held at the Los Angeles Convention Center. The attendees at BEA had not minded that the air was recycled, the lighting was fluorescent, and the food was bad. The first hot book sighting came courtesy of Anne Rice. Michelle Moran, author of newly published novel, "The…

  17. Ultrafast carrier dynamics in polycrystalline bismuth telluride nanofilm

    SciTech Connect

    Jia, Lin; Ma, Weigang; Zhang, Xing

    2014-06-16

    In this study, the dynamics of energy carriers in polycrystalline bismuth telluride nanofilm are investigated by the ultrafast pump-probe method. The energy relaxation processes are quantitatively analyzed by using the numerical fitting models. The extracted hot carrier relaxation times of photon excitation, thermalization, and diffusion are around sub-picosecond. The initial reflectivity recovery is found to be dominantly determined by the carrier diffusion, electron-phonon coupling, and photo-generated carriers trapping processes. High-frequency and low-frequency oscillations are both observed and attributed to coherent optical phonons and coherent acoustic phonons, respectively.

  18. Stress.

    PubMed

    Chambers, David W

    2008-01-01

    We all experience stress as a regular, and sometimes damaging and sometimes useful, part of our daily lives. In our normal ups and downs, we have our share of exhaustion, despondency, and outrage--matched with their corresponding positive moods. But burnout and workaholism are different. They are chronic, dysfunctional, self-reinforcing, life-shortening habits. Dentists, nurses, teachers, ministers, social workers, and entertainers are especially susceptible to burnout; not because they are hard-working professionals (they tend to be), but because they are caring perfectionists who share control for the success of what they do with others and perform under the scrutiny of their colleagues (they tend to). Workaholics are also trapped in self-sealing cycles, but the elements are ever-receding visions of control and using constant activity as a barrier against facing reality. This essay explores the symptoms, mechanisms, causes, and successful coping strategies for burnout and workaholism. It also takes a look at the general stress response on the physiological level and at some of the damage American society inflicts on itself. PMID:18846841

  19. Carrier-mediated electrodialysis.

    PubMed

    Hansen, Steven P; Fyles, Thomas M

    2011-06-14

    Supported liquid membranes containing valinomycin or a calix[4]arene carrier can support electrodialysis under an imposed transmembrane potential. Under optimal conditions both transmembrane flux and carrier-based cation selectivity are enhanced relative to simple dialysis mediated by the same carriers. PMID:21308126

  20. Charge-Carrier-Scattering Spectroscopy With BEEM

    NASA Technical Reports Server (NTRS)

    Hecht, Michael H.; Bell, Lloyd D.; Kaiser, William J.

    1992-01-01

    Ballistic-electron-emission microscopy (BEEM) constitutes basis of new spectroscopy of scattering of electrons and holes. Pointed tip electrode scans near surface of metal about 100 angstrom thick on semiconductor. Principle similar to scanning tunneling microscope, except metal acts as third electrode. Used to investigate transport phenomena, scattering phenomena, and creation of hot charge carriers in Au/Si and Au/GaAs metal/semiconductor microstructures.

  1. Ab initio study of hot electrons in GaAs.

    PubMed

    Bernardi, Marco; Vigil-Fowler, Derek; Ong, Chin Shen; Neaton, Jeffrey B; Louie, Steven G

    2015-04-28

    Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body perturbation theory. Our computed electron-phonon relaxation times at the onset of the Γ, L, and X valleys are in excellent agreement with ultrafast optical experiments and show that the ultrafast (tens of femtoseconds) hot electron decay times observed experimentally arise from electron-phonon scattering. This result is an important advance to resolve a controversy on hot electron cooling in GaAs. We further find that, contrary to common notions, all optical and acoustic modes contribute substantially to electron-phonon scattering, with a dominant contribution from transverse acoustic modes. This work provides definitive microscopic insight into hot electrons in GaAs and enables accurate ab initio computation of hot carriers in advanced materials. PMID:25870287

  2. Two fatty acid desaturases, STEAROYL-ACYL CARRIER PROTEIN Δ9-DESATURASE6 and FATTY ACID DESATURASE3, are involved in drought and hypoxia stress signaling in Arabidopsis crown galls.

    PubMed

    Klinkenberg, Joern; Faist, Hanna; Saupe, Stefanie; Lambertz, Sophie; Krischke, Markus; Stingl, Nadja; Fekete, Agnes; Mueller, Martin J; Feussner, Ivo; Hedrich, Rainer; Deeken, Rosalia

    2014-02-01

    Agrobacterium tumefaciens-derived crown galls of Arabidopsis (Arabidopsis thaliana) contain elevated levels of unsaturated fatty acids and strongly express two fatty acid desaturase genes, ω3 FATTY ACID DESATURASE3 (FAD3) and STEAROYL-ACYL CARRIER PROTEIN Δ9-DESATURASE6 (SAD6). The fad3-2 mutant with impaired α-linolenic acid synthesis developed significantly smaller crown galls under normal, but not under high, relative humidity. This strongly suggests that FAD3 plays a role in increasing drought stress tolerance of crown galls. SAD6 is a member of the SAD family of as yet unknown function. Expression of the SAD6 gene is limited to hypoxia, a physiological condition found in crown galls. As no sad6 mutant exists and to link the function of SAD6 with fatty acid desaturation in crown galls, the lipid pattern was analyzed of plants with constitutive SAD6 overexpression (SAD6-OE). SAD6-OE plants contained lower stearic acid and higher oleic acid levels, which upon reduction of SAD6 overexpression by RNA interference (SAD6-OE-RNAi) regained wild-type-like levels. The development of crown galls was not affected either in SAD6-OE or SAD6-OE-RNAi or by RNA interference in crown galls. Since biochemical analysis of SAD6 in yeast (Saccharomyces cerevisiae) and Escherichia coli failed, SAD6 was ectopically expressed in the background of the well-known suppressor of salicylic acid-insensitive2 (ssi2-2) mutant to confirm the desaturase function of SAD6. All known ssi2-2 phenotypes were rescued, including the high stearic acid level. Thus, our findings suggest that SAD6 functions as a Δ9-desaturase, and together with FAD3 it increases the levels of unsaturated fatty acids in crown galls under hypoxia and drought stress conditions. PMID:24368335

  3. Hot Meetings

    NASA Technical Reports Server (NTRS)

    Chiu, Mary

    2002-01-01

    A colleague walked by my office one time as I was conducting a meeting. There were about five or six members of my team present. The colleague, a man who had been with our institution (The Johns Hopkins Applied Physics Lab, a.k.a. APL) for many years, could not help eavesdropping. He said later it sounded like we we re having a raucous argument, and he wondered whether he should stand by the door in case things got out of hand and someone threw a punch. Our Advanced Composition Explorer (ACE) team was a hot group, to invoke the language that is fashionable today, although we never thought of ourselves in those terms. It was just our modus operandi. The tenor of the discussion got loud and volatile at times, but I prefer to think of it as animated, robust, or just plain collaborative. Mary Chiu and her "hot" team from the Johns Hopkins Applied Physics Laboratory built the Advanced Composition Explorer spacecraft for NASA. Instruments on the spacecraft continue to collect data that inform us about what's happening on our most important star, the Sun.

  4. Heat to electricity conversion by cold carrier emissive energy harvesters

    SciTech Connect

    Strandberg, Rune

    2015-12-07

    This paper suggests a method to convert heat to electricity by the use of devices called cold carrier emissive energy harvesters (cold carrier EEHs). The working principle of such converters is explained and theoretical power densities and efficiencies are calculated for ideal devices. Cold carrier EEHs are based on the same device structure as hot carrier solar cells, but works in an opposite way. Whereas a hot carrier solar cell receives net radiation from the sun and converts some of this radiative heat flow into electricity, a cold carrier EEH sustains a net outflux of radiation to the surroundings while converting some of the energy supplied to it into electricity. It is shown that the most basic type of cold carrier EEHs have the same theoretical efficiency as the ideal emissive energy harvesters described earlier by Byrnes et al. In the present work, it is also shown that if the emission from the cold carrier EEH originates from electron transitions across an energy gap where a difference in the chemical potential of the electrons above and below the energy gap is sustained, power densities slightly higher than those given by Byrnes et al. can be achieved.

  5. Heat to electricity conversion by cold carrier emissive energy harvesters

    NASA Astrophysics Data System (ADS)

    Strandberg, Rune

    2015-12-01

    This paper suggests a method to convert heat to electricity by the use of devices called cold carrier emissive energy harvesters (cold carrier EEHs). The working principle of such converters is explained and theoretical power densities and efficiencies are calculated for ideal devices. Cold carrier EEHs are based on the same device structure as hot carrier solar cells, but works in an opposite way. Whereas a hot carrier solar cell receives net radiation from the sun and converts some of this radiative heat flow into electricity, a cold carrier EEH sustains a net outflux of radiation to the surroundings while converting some of the energy supplied to it into electricity. It is shown that the most basic type of cold carrier EEHs have the same theoretical efficiency as the ideal emissive energy harvesters described earlier by Byrnes et al. In the present work, it is also shown that if the emission from the cold carrier EEH originates from electron transitions across an energy gap where a difference in the chemical potential of the electrons above and below the energy gap is sustained, power densities slightly higher than those given by Byrnes et al. can be achieved.

  6. Microscopic origins of the terahertz carrier relaxation and cooling dynamics in graphene.

    PubMed

    Mihnev, Momchil T; Kadi, Faris; Divin, Charles J; Winzer, Torben; Lee, Seunghyun; Liu, Che-Hung; Zhong, Zhaohui; Berger, Claire; de Heer, Walt A; Malic, Ermin; Knorr, Andreas; Norris, Theodore B

    2016-01-01

    The ultrafast dynamics of hot carriers in graphene are key to both understanding of fundamental carrier-carrier interactions and carrier-phonon relaxation processes in two-dimensional materials, and understanding of the physics underlying novel high-speed electronic and optoelectronic devices. Many recent experiments on hot carriers using terahertz spectroscopy and related techniques have interpreted the variety of observed signals within phenomenological frameworks, and sometimes invoke extrinsic effects such as disorder. Here, we present an integrated experimental and theoretical programme, using ultrafast time-resolved terahertz spectroscopy combined with microscopic modelling, to systematically investigate the hot-carrier dynamics in a wide array of graphene samples having varying amounts of disorder and with either high or low doping levels. The theory reproduces the observed dynamics quantitatively without the need to invoke any fitting parameters, phenomenological models or extrinsic effects such as disorder. We demonstrate that the dynamics are dominated by the combined effect of efficient carrier-carrier scattering, which maintains a thermalized carrier distribution, and carrier-optical-phonon scattering, which removes energy from the carrier liquid. PMID:27221060

  7. [An experimental study on the prediction of heat stress of workers in a hot environment, with special reference to the relation between wearing suits, work load and environmental temperature].

    PubMed

    Yoshino, K; Takano, K; Nagasaka, A; Shigeta, S

    1987-11-01

    Hardly any practical approaches have been made on prediction of appearance of heat-stress hazard, although basic studies have extensively been made, including various heat-stress indices. Hence, in the present paper, an applicational prediction equation is presented with regard to the permissible working time without heat-stress hazard on the basis of experimental results. The purpose of this experiment was to examine the significant correlations between elevated rectal temperature, working conditions such as wearing suits, work load, and environmental temperature. The results obtained can be summarized as follows. (1) A critical level of environmental temperature exists. When this level is exceeded, physiological indices such as rectal temperature rapidly increased. According to experimental results, the critical level was about 30 degrees C and the heavier the work load, the lower was the critical level. (2) Moreover, the heavier the wearing suit, the lower became the temperature level. This finding indicated that it was important to choose a suitable apparel under a hot environment in order to keep the workers safe from heat-stress hazard. (3) A general prediction equation of raising the level of rectal temperature compared with that of initial condition was proposed by analysing each experimental condition (suit, work load, and environmental temperature) by use of second order multiple regression method. This equation showed that elevation of rectal temperature was assumed to be proportional to the logarithm of the working periods. (4) The predicted values by this equation corresponded with the experimental values within +/- 0.2-0.3 degrees C, and the correlation coefficient was 0.96. This equation suggests that heavier suits elevated the rectal temperature about 2-3 degrees C when the work load and environmental temperature were moderate. (5) It is possible to predict the permissible working period by this equation. This may be applied to the working plan

  8. Distinguishing between plasmon-induced and photo-excited carriers in a device geometry (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Zhao, Hangqi; Zheng, Bob Y.; Manjavacas, Alejandro; McClain, Michael J.; Nordlander, Peter; Halas, Naomi J.

    2015-09-01

    The use of surface plasmons, charge density oscillations of conduction electrons of metallic nanostructures, could drastically alter how sunlight is converted into electricity or fuels by increasing the efficiency of light-harvesting devices through enhanced light-matter interactions. Surface plasmons can decay directly into energetic electron-hole pairs, or "hot" carriers, which can be used for photocurrent generation or photocatalysis. However, little has been understood about the fundamental mechanisms behind plasmonic carrier generation. Here we use metallic nano-wire based hot carrier devices on a wide-bandgap semiconductor substrate to show that plasmonic hot carrier generation is proportional to field intensity enhancement instead of bulk material absorption. We also show that interband carrier generation results in less energetic carriers than plasmon-induced generation, and a plasmon is required to inject electrons over a large energy barrier. Finite Difference Time Domain (FDTD) method is used for theoretical calculations, which match well with experimental results. This work points to a clear route to increasing the efficiency of plasmonic hot carrier devices and drastically simplifies the theoretical framework for understanding the mechanisms of hot carrier generation.

  9. Hot tearing evaluation for aluminium alloys

    NASA Astrophysics Data System (ADS)

    Brůna, Marek

    2016-06-01

    Hot tearing during solidification of aluminium alloys castings can be a serious problem. This phenomenon is well known but still insufficiently investigated. Hot tearing occurs in form of irregular cracks in metal castings that develop during solidification and cooling. The cause of hot tearing is generally attributed to the development of thermally induced tensile stresses and strains in a casting as the molten metal contracts during solidification and solid state shrinkage. Submited paper consists of two parts. The first part introduces the reader to the phenomenon of hot tearing. The second part describes newly developed method for assessing hot tearing susceptibility of aluminium alloys, and also gives the results on hot tearing for various aluminium alloys.

  10. Common Carrier Services.

    ERIC Educational Resources Information Center

    Federal Communications Commission, Washington, DC.

    After outlining the Federal Communications Commission's (FCC) responsibility for regulating interstate common carrier communication (non-broadcast communication whose carriers are required by law to furnish service at reasonable charges upon request), this information bulletin reviews the history, technological development, and current…

  11. Behavioral Treatment of Menopausal Hot Flashes: Evaluation by Objective Methods.

    ERIC Educational Resources Information Center

    Germaine, Leonard M.; Freedman, Robert R.

    1984-01-01

    Used latency to hot flash onset under heat stress to evaluate the effects of relaxation treatment or a control procedure in 14 menopausal women. Following treatment, the latency to hot flash onset during heat stress was increased in relaxation subjects. Reported symptom frequency was significantly reduced in relaxation subjects. (BH)

  12. Thermal stress in seven types of chemical defense ensembles during moderate exercise in hot environments. Final report, May 1991-July 1992

    SciTech Connect

    Bomalaski, S.H.; Hengst, R.; Constable, S.H.

    1993-08-01

    United States Air Force -(USAF) personnel must perform their duties in many operational environments, including those with the potential for contamination with toxic chemical warfare (CW) agents. This study evaluated the physiological response to thermal stress in subjects performing moderate work in current and prototype chemical protective garments including the Battle Dress Overgarment (BDO)+BDU, BDO without BDU, United Kingdom (UK) undercoverall+BDU, Gore-Tex rainsuit+PJ-7 undercoverall, Marine Light Fighter Suit (MLFS), CWU77P, PJ-7 alone, and the BDU alone. Experimental conditions were dry bulb temperature of 40 deg C (104 deg F), a wet bulb temperature of 270C (80.6 deg F), and a black globe temperature of 450C (113 deg F). Eleven subjects walked on a treadmill at 3 mph with a 5% grade incline until rectal temperature (Tre) rose 1.5 deg C (2.7 deg F) above the starting value. Heart rate, rectal and mean skin temperature, and body heat storage were monitored continuously. Sweat evaporation and production were determined from the differences between pre- and postexperiment clothed and nude weights. Significantly longer work times, lower heart rates, lower Tmsk, and lower heat storage, were seen in the group comprised of the BDU, MLFS, CWU-77P, and PJ-7 compared to the Gore-Tex with PJ-7, UK plus BD BDO+BDU, and BDO no BDU ensembles. Suits which resulted in shorter tolerance times also caused rates of sweat production and lower % sweat evaporation than the less physiologically burdensome suits. Chemical protective ensembles, Thermal stress, Clothing, Exercise.

  13. Charge carrier dynamics in bulk MoS2 crystal studied by transient absorption microscopy

    NASA Astrophysics Data System (ADS)

    Kumar, Nardeep; He, Jiaqi; He, Dawei; Wang, Yongsheng; Zhao, Hui

    2013-04-01

    We report a transient absorption microscopy study of charge carrier dynamics in bulk MoS2 crystals at room temperature. Charge carriers are injected by interband absorption of a 555-nm pulse, and probed by measuring differential reflection of a time-delayed and spatially scanned 660-nm pulse. We find an intervalley transfer time of about 0.35 ps, an energy relaxation time of hot carriers on the order of 50 ps, and a carrier lifetime of 180 ± 20 ps. By monitoring the spatiotemporal dynamics of carriers, we obtained a diffusion coefficient of thermalized electrons of 4.2 ± 0.5 cm2/s, corresponding to a mobility of 170 ± 20 cm2/Vs. We also observed a time-varying diffusion coefficient of hot carriers.

  14. Electrically tunable hot-silicon terahertz attenuator

    NASA Astrophysics Data System (ADS)

    Wang, Minjie; Vajtai, Robert; Ajayan, Pulickel M.; Kono, Junichiro

    2014-10-01

    We have developed a continuously tunable, broadband terahertz attenuator with a transmission tuning range greater than 103. Attenuation tuning is achieved electrically, by simply changing the DC voltage applied to a heating wire attached to a bulk silicon wafer, which controls its temperature between room temperature and ˜550 K, with the corresponding free-carrier density adjusted between ˜1011 cm-3 and ˜1017 cm-3. This "hot-silicon"-based terahertz attenuator works most effectively at 450-550 K (corresponding to a DC voltage variation of only ˜7 V) and completely shields terahertz radiation above 550 K in a frequency range of 0.1-2.5 THz. Both intrinsic and doped silicon wafers were tested and demonstrated to work well as a continuously tunable attenuator. All behaviors can be understood quantitatively via the free-carrier Drude model taking into account thermally activated intrinsic carriers.

  15. Automatic carrier acquisition system

    NASA Technical Reports Server (NTRS)

    Bunce, R. C. (Inventor)

    1973-01-01

    An automatic carrier acquisition system for a phase locked loop (PLL) receiver is disclosed. It includes a local oscillator, which sweeps the receiver to tune across the carrier frequency uncertainty range until the carrier crosses the receiver IF reference. Such crossing is detected by an automatic acquisition detector. It receives the IF signal from the receiver as well as the IF reference. It includes a pair of multipliers which multiply the IF signal with the IF reference in phase and in quadrature. The outputs of the multipliers are filtered through bandpass filters and power detected. The output of the power detector has a signal dc component which is optimized with respect to the noise dc level by the selection of the time constants of the filters as a function of the sweep rate of the local oscillator.

  16. Common Carrier Services.

    ERIC Educational Resources Information Center

    Federal Communications Commission, Washington, DC.

    This bulletin outlines the Federal Communications Commission's (FCC) responsibilities in regulating the interstate and foreign common carrier communication via electrical means. Also summarized are the history, technological development, and current capabilities and prospects of telegraph, wire telephone, radiotelephone, satellite communications,…

  17. Preconception Carrier Screening

    MedlinePlus

    ... What can the results of a carrier screening test tell me? A genetic counselor or your health care provider will use the results to calculate the ... the publisher. Related FAQs Genetic Disorders (FAQ094) Screening Tests for Birth Defects ... Education & Events Annual Meeting CME Overview CREOG ...

  18. Modelling Hot Air Balloons.

    ERIC Educational Resources Information Center

    Brimicombe, M. W.

    1991-01-01

    A macroscopic way of modeling hot air balloons using a Newtonian approach is presented. Misleading examples using a car tire and the concept of hot air rising are discussed. Pressure gradient changes in the atmosphere are used to explain how hot air balloons work. (KR)

  19. Sealed substrate carrier for electroplating

    DOEpatents

    Ganti, Kalyana Bhargava

    2012-07-17

    One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier includes a non-conductive carrier body on which the substrates are held, and conductive lines are embedded within the carrier body. A conductive bus bar is embedded into a top side of the carrier body and is conductively coupled to the conductive lines. A thermoplastic overmold covers a portion of the bus bar, and there is a plastic-to-plastic bond between the thermoplastic overmold and the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

  20. Carrier heating in quantum wells under optical and current injection of electron-hole pairs

    SciTech Connect

    Vorobjev, L. E. Vinnichenko, M. Ya.; Firsov, D. A.; Zerova, V. L.; Panevin, V. Yu.; Sofronov, A. N.; Thumrongsilapa, P.; Ustinov, V. M.; Zhukov, A. E.; Vasiljev, A. P.; Shterengas, L.; Kipshidze, G.; Hosoda, T.; Belenky, G.

    2010-11-15

    Carrier heating in GaAs/AlGaAs quantum wells (QWs) under optical interband pumping in the spontaneous-emission mode has been studied. The electron temperature was determined as a function of the pumping intensity. The effect of the electric field on the photoluminescence spectrum was examined. The change in the carrier concentration with the drive current in the spontaneous- and stimulated-emission modes in InGaAsSb/InAlGaAsSb QWs was determined from electroluminescence spectra. The rise in the temperature of hot carriers, which results in the increase in the carrier concentration with the drive current, was roughly estimated.

  1. Outbreak of hot-foot syndrome - caused by Pseudomonas aeruginosa.

    PubMed

    Michl, R K; Rusche, T; Grimm, S; Limpert, E; Beck, J F; Dost, A

    2012-07-01

    Infections with Pseudomonas aeruginosa can cause the hot-foot syndrome, presenting with painful plantar erythematous nodules. Particularly, the mechanically stressed areas of the foot are affected after contact with contaminated water from saunas, swimming pools, hot tubs, etc. We report an outbreak of hot-foot syndrome caused by Pseudomonas in 10 patients. The therapeutic regimens applied reached from local antiseptic therapy to systemic antibiotics. PMID:22187332

  2. Yarn carrier with clutch

    NASA Technical Reports Server (NTRS)

    Doyne, Richard A. (Inventor); Benson, Rio H. (Inventor); El-Shiekh, Aly (Inventor)

    1994-01-01

    A yarn carrier apparatus particularly suited for use in braiding machinery or the like due to its capability of continuous yarn feeding and retraction of long lengths of yarn. The yarn carrier apparatus comprises a yarn supply spool which is rotatably mounted within the housing, a spring motor also mounted within the housing and operatively connected to the yarn supply spool through a mechanical transmission assembly which is adapted to multiply rotational movement between the first element of the gear assembly operatively connected to the spring motor and the final element of the gear assembly operatively connected to the yarn supply spool. The spring motor is adapted to tension the yarn during both feeding and retraction thereof, and it is further adapted to periodically rotatably slip within the housing and partially unwind so as to allow for continuous withdrawal of a long length of yarn without the spring motor becoming fully wound and preventing further yarn retraction.

  3. Turbine Engine Hot Section Technology (HOST)

    NASA Technical Reports Server (NTRS)

    1982-01-01

    Research and plans concerning aircraft gas turbine engine hot section durability problems were discussed. Under the topics of structural analysis, fatigue and fracture, surface protective coatings, combustion, turbine heat transfer, and instrumentation specific points addressed were the thermal and fluid environment around liners, blades, and vanes, material coatings, constitutive behavior, stress-strain response, and life prediction methods for the three components.

  4. Synthesis and Ultrafast Carrier Dynamics of Single-Crystal Two-Dimensional CuInSe2 Nanosheets.

    PubMed

    Tao, Xin; Mafi, Elham; Gu, Yi

    2014-08-21

    We report, for the first time, the synthesis of single-crystal two-dimensional (2D) CuInSe2 nanosheets and the studies of ultrafast carrier dynamics and transport in this 2D material. Particularly, single-crystal 2D CuInSe2 with various thicknesses in the nanometer regime were fabricated by a solid-state chemical reaction between Cu and single-crystal exfoliated In2Se3 nanosheets. Characteristics of transient optical reflectivity, obtained from femtosecond optical pump-probe measurements on single CuInSe2 nanosheets, suggest that the hot carrier cooling process dominates the carrier dynamics within a few picoseconds following the optical excitation. Spatially resolved pump-probe measurements, coupled to simple model calculations, were used to obtain the ambipolar hot carrier diffusion coefficient in single nanosheets. The dependence of the hot carrier diffusion coefficient on the nanosheet thickness provides insight into the limiting mechanisms of hot carrier transport and can be used to gauge the possibility of efficient hot carrier collection in nanostructured CuInSe2 solar cells. PMID:26278089

  5. Ab Initio Calculations of Excited Carrier Dynamics in Gallium Nitride

    NASA Astrophysics Data System (ADS)

    Jhalani, Vatsal; Bernardi, Marco

    Bulk wurtzite GaN is the primary material for blue light-emission technology. The radiative processes in GaN are regulated by the dynamics of excited (or so-called ``hot'') carriers, through microscopic processes not yet completely understood. We present ab initio calculations of electron-phonon (e-ph) scattering rates for hot carriers in GaN. Our work combines density functional theory to compute the electronic states, and density functional perturbation theory to obtain the phonon dispersions and e-ph coupling matrix elements. These quantities are interpolated on fine Brillouin zone grids with maximally localized Wannier functions, to converge the e-ph scattering rates within 5 eV of the band edges. We resolve the contribution of the different phonon modes to the total scattering rate, and study the impact on the relaxation times of the long-range Fröhlich interaction due to the longitudinal-optical phonon modes.

  6. Theory of hot electron photoemission from graphene

    NASA Astrophysics Data System (ADS)

    Ang, Lay Kee; Liang, Shijun

    Motivated by the development of Schottky-type photodetectors, some theories have been proposed to describe how the hot carriers generated by the incident photon are transported over the Schottky barrier through the internal photoelectric effect. One of them is Fowler's law proposed as early as 1931, which studied the temperature dependence of photoelectric curves of clean metals. This law is very successful in accounting for mechanism of detecting photons of energy lower than the band gap of semiconductor based on conventional metal/semiconductor Schottky diode. With the goal of achieving better performance, graphene/silicon contact-based- graphene/WSe2 heterostructure-based photodetectors have been fabricated to demonstrate superior photodetection efficiency. However, the theory of how hot electrons is photo-excited from graphene into semiconductor remains unknown. In the current work, we first examine the photoemission process from suspended graphene and it is found that traditional Einstein photoelectric effect may break down for suspended graphene due to the unique linear band structure. Furthermore, we find that the same conclusion applies for 3D graphene analog (e.g. 3D topological Dirac semi-metal). These findings are very useful to further improve the performance of graphene-based photodetector, hot-carrier solar cell and other kinds of sensor.

  7. Maintainable substrate carrier for electroplating

    SciTech Connect

    Chen, Chen-An; Abas, Emmanuel Chua; Divino, Edmundo Anida; Ermita, Jake Randal G.; Capulong, Jose Francisco S.; Castillo, Arnold Villamor; Ma; Diana Xiaobing

    2012-07-17

    One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The carrier includes a non-conductive carrier body on which the substrates are placed and conductive lines embedded within the carrier body. A plurality of conductive clip attachment parts are attached in a permanent manner to the conductive lines embedded within the carrier body. A plurality of contact clips are attached in a removable manner to the clip attachment parts. The contact clips hold the substrates in place and conductively connecting the substrates with the conductive lines. Other embodiments, aspects and features are also disclosed.

  8. Maintainable substrate carrier for electroplating

    DOEpatents

    Chen, Chen-An; Abas, Emmanuel Chua; Divino, Edmundo Anida; Ermita, Jake Randal G.; Capulong, Jose Francisco S.; Castillo, Arnold Villamor; Ma, Diana Xiaobing

    2016-08-02

    One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The carrier includes a non-conductive carrier body on which the substrates are placed and conductive lines embedded within the carrier body. A plurality of conductive clip attachment parts are attached in a permanent manner to the conductive lines embedded within the carrier body. A plurality of contact clips are attached in a removable manner to the clip attachment parts. The contact clips hold the substrates in place and conductively connecting the substrates with the conductive lines. Other embodiments, aspects and features are also disclosed.

  9. Microscopic origins of the terahertz carrier relaxation and cooling dynamics in graphene

    PubMed Central

    Mihnev, Momchil T.; Kadi, Faris; Divin, Charles J.; Winzer, Torben; Lee, Seunghyun; Liu, Che-Hung; Zhong, Zhaohui; Berger, Claire; de Heer, Walt A.; Malic, Ermin; Knorr, Andreas; Norris, Theodore B.

    2016-01-01

    The ultrafast dynamics of hot carriers in graphene are key to both understanding of fundamental carrier–carrier interactions and carrier–phonon relaxation processes in two-dimensional materials, and understanding of the physics underlying novel high-speed electronic and optoelectronic devices. Many recent experiments on hot carriers using terahertz spectroscopy and related techniques have interpreted the variety of observed signals within phenomenological frameworks, and sometimes invoke extrinsic effects such as disorder. Here, we present an integrated experimental and theoretical programme, using ultrafast time-resolved terahertz spectroscopy combined with microscopic modelling, to systematically investigate the hot-carrier dynamics in a wide array of graphene samples having varying amounts of disorder and with either high or low doping levels. The theory reproduces the observed dynamics quantitatively without the need to invoke any fitting parameters, phenomenological models or extrinsic effects such as disorder. We demonstrate that the dynamics are dominated by the combined effect of efficient carrier–carrier scattering, which maintains a thermalized carrier distribution, and carrier–optical–phonon scattering, which removes energy from the carrier liquid. PMID:27221060

  10. Enhancing the carrier thermalization time in organometallic perovskites by halide mixing.

    PubMed

    Madjet, Mohamed El-Amine; Akimov, Alexey V; El-Mellouhi, Fadwa; Berdiyorov, Golibjon R; Ashhab, Sahel; Tabet, Nouar; Kais, Sabre

    2016-02-21

    Hybrid metal-organic halide perovskites have recently attracted a great deal of attention because of their interesting electronic, optical and transport properties, which make them promising materials for high-performance, low-cost solar cells. Fundamental understanding of the formation mechanisms and dynamics of photoinduced charge carriers is essential for improving the performance of perovskite solar cell devices. For example, a significant amount of absorbed solar energy is lost as a result of carrier thermalization. This energy could be harnessed by extracting hot carriers before they cool down to the band edges. Although such hot carrier collection is experimentally challenging, theoretical investigations based on time-dependent methods can guide future experimental research by providing insights into the thermalization process. Here, we perform ab initio nonadiabatic molecular dynamics simulations to study non-radiative relaxation dynamics of charge carriers in hybrid halide perovskites. We find that the carrier relaxation time can be considerably increased by mixing halogen atoms in the perovskite materials. These findings show that simple approaches could be adopted to slow down the thermalization process of hot carriers in perovskite materials. PMID:26812955

  11. "I'm Healthy, It's Not Going To Be Me": Exploring experiences of carriers identified through a population reproductive genetic carrier screening panel in Australia.

    PubMed

    Beard, Catherine A; Amor, David J; Di Pietro, Louisa; Archibald, Alison D

    2016-08-01

    Advancing genetic testing technologies mean that population-based carrier screening for multiple inherited conditions is now available. As the number of genetic conditions being screened increases, there is a need for research into how people experience these screening programs. This research aimed to explore how women experience simultaneous carrier screening for three inherited conditions: cystic fibrosis (CF), spinal muscular atrophy (SMA), and fragile X syndrome (FXS). A qualitative approach was adopted using in-depth semi-structured interviews to explore the experiences of ten female participants: five SMA carriers, three CF carriers, and two FXS premutation carriers. Eight participants were pregnant when offered screening by their general practitioner or obstetrician and the decision to have screening was described as straightforward. Participants reported experiencing emotional responses such as anxiety and stress while waiting for either their partner's carrier screen result (CF or SMA carriers) or the pregnancy's CVS result (FXS carrier) and sought additional information about the relevant condition during this time. Most participants were in favor of population carrier screening for these conditions, preferably prior to conception. Genetic counselors played an essential role in supporting couples after they received a carrier result given the variable consent processes undertaken when screening was offered. Further research should focus on the development of reliable online information tailored to people receiving carrier results and strategies for raising awareness of the availability of population carrier screening within the community. © 2016 Wiley Periodicals, Inc. PMID:27150953

  12. Personnel carrier efficiency counts

    SciTech Connect

    Brezovec, D.

    1982-09-01

    Different types of personnel transport for underground mines are considered. In the US the majority are track vehicles powered by batteries or trolley lines. The safety aspects of trolley lines are discussed, together with the problems of track design. Rubber-tyred equipment is increasing in use: it is powered by batteries or diesel. Details of both types of carrier from a number of manufacturers are given in a Table. Bicycles and scooters which run on tracks are briefly mentioned, as well as the chairlift system used in Europe.

  13. Effects of hot-water extract of banana (Musa acuminata) fruit's peel on the antibacterial activity, and anti-hypothermal stress, immune responses and disease resistance of the giant freshwater prawn, Macrobrachium rosenbegii.

    PubMed

    Rattanavichai, Wutti; Cheng, Winton

    2014-08-01

    The hot-extracts isolated from fruit's peel of banana, Musa acuminata, was evaluated on the antibacterial activity to pathogens from aquatic animals, and immunostimulating potential, disease resistance and anti-hypothermal stress in giant freshwater prawn, Macrobrachium rosenbergii through injection administration. The banana peel extract (BPE) showed good activity against 1 Gram-positive and 3 Gram-negative pathogens, including Lactococcus garvieae, Photobacteria damsella, Vibrio alginolyticus and Vibrio parahemolyticus especially in prawn pathogen of L. garvieae strain, which were carried out by a disk diffusion method. Prawn received BPE via injection administration at 1-6 μg (g prawn)(-1) significantly increased total haemocyte count (THC), hyaline cell (HC), granular cell (GC), phenoloxidase (PO) activity and phagocytic activity against L. garvieae from 3 to 6 days, and significantly increased clearance efficiency against L. garvieae and a significantly decreased coagulation time of prawn from 1 to 6 days. Prawn injected with BPE at 6.0 μg (g prawn)(-1) for 6 days showed significantly increased superoxide dismutase (SOD) activity, but significantly decreased respiratory bursts (RBs) of per haemocyte. Survival rates of M. rosenbergii injected with BPE at concentrations of 1, 3 and 6 μg (g prawn)(-1) were significantly higher than those injected with saline control after challenge with L. garvieae for 4-6 days, and the respective relative survival percentages of prawn were 28.6%, 38.1%, and 47.8%, respectively at 6 days. The sublethal time of prawns that had received saline and BPE at 1, 3 and 6 μg (g prawn)(-1) for 6 days and then were transferred from 28 °C to 14 °C were 69.4, 79.8, 83.6, and 90.2 h, respectively. It was concluded that the BPE can be used as the bacteriostat, and immunostimulant and physiological regulator for prawn through injection administration to enhance immunity, physiological responses, and resistance against L. garvieae. PMID

  14. Concentrator hot-spot testing, phase 1

    NASA Technical Reports Server (NTRS)

    Gonzalez, C. C.

    1987-01-01

    Results of a study to determine the hot-spot susceptibility of concentrator cells, to provide a hot-spot qualification test for concentrator modules, and to provide guidelines for reducing hot-spot susceptibility are presented. Hot-spot heating occurs in a photovoltaic module when the short-circuit current of a cell is lower than the string operating current forcing the cell into reverse bias with a concurrent power dissipation. Although the basis for the concentrator module hot-spot qualification test is the test developed for flat-plate modules, issues, such as providing cell illumination, introduce additional complexities into the testing procedure. The same general guidelines apply for protecting concentrator modules from hot-spot stressing as apply to flat-plate modules. Therefore, recommendations are made on the number of bypass diodes required per given number of series cells per module or source circuit. In addition, a new method for determining the cell temperature in the laboratory or in the field is discussed.

  15. Hot Spot at Yellowstone

    ERIC Educational Resources Information Center

    Dress, Abby

    2005-01-01

    Within this huge national park (over two million acres spread across Wyoming, Montana, and Idaho) are steaming geysers, hot springs, bubbling mudpots, and fumaroles, or steam vents. Drives on the main roads of Yellowstone take tourists through the major hot attractions, which also include Norris Geyser Basin, Upper and Lower Geyser Basin, West…

  16. The Earth's Hot Spots.

    ERIC Educational Resources Information Center

    Vink, Gregory E.; And Others

    1985-01-01

    Hot spots are isolated areas of geologic activity where volcanic eruptions, earthquakes, and upwelling currents occur far from plate boundaries. These mantle plumes are relatively stable and crustal plates drift over them. The nature and location of hot spots (with particular attention to the Hawaiian Islands and Iceland) are discussed. (DH)

  17. 6. HOT AIR PORTION OF DAMPERS. Hot Springs National ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    6. HOT AIR PORTION OF DAMPERS. - Hot Springs National Park, Bathhouse Row, Lamar Bathhouse: Mechanical & Piping Systems, State Highway 7, 1 mile north of U.S. Highway 70, Hot Springs, Garland County, AR

  18. Telemetry carrier ring and support

    NASA Technical Reports Server (NTRS)

    Wakeman, Thomas G. (Inventor)

    1992-01-01

    A telemetry carrier ring for use in a gas turbine engine includes an annular support ring connected to the engine and an annular carrier ring coupled to the support ring, each ring exhibiting different growth characteristics in response to thermal and mechanical loading. The carrier ring is coupled to the support ring by a plurality of circumferentially spaced web members which are relatively thin in an engine radial direction to provide a predetermined degree of radial flexibility. the web members have a circumferential width and straight axial line of action selected to transfer torque and thrust between the support ring and the carrier ring without substantial deflection. The use of the web members with radial flexibility provides compensation between the support ring and the carrier ring since the carrier ring grows at a different rate than the supporting ring.

  19. Low-resistivity bulk silicon prepared by hot-pressing boron- and phosphorus-hyperdoped silicon nanocrystals

    SciTech Connect

    Luan, Qingbin; Ni, Zhenyi; Zhu, Tiejun; Yang, Deren; Pi, Xiaodong; Koura, Setsuko

    2014-12-15

    Technologically important low-resistivity bulk Si has been usually produced by the traditional Czochralski growth method. We now explore a novel method to obtain low-resistivity bulk Si by hot-pressing B- and P-hyperdoped Si nanocrystals (NCs). In this work bulk Si with the resistivity as low as ∼ 0.8 (40) mΩ•cm has been produced by hot pressing P (B)-hyperdoped Si NCs. The dopant type is found to make a difference for the sintering of Si NCs during the hot pressing. Bulk Si hot-pressed from P-hyperdoped Si NCs is more compact than that hot-pressed from B-hyperdoped Si NCs when the hot-pressing temperature is the same. This leads to the fact that P is more effectively activated to produce free carriers than B in the hot-pressed bulk Si. Compared with the dopant concentration, the hot-pressing temperature more significantly affects the structural and electrical properties of hot-pressed bulk Si. With the increase of the hot-pressing temperature the density of hot-pressed bulk Si increases. The highest carrier concentration (lowest resistivity) of bulk Si hot-pressed from B- or P-hyperdoped Si NCs is obtained at the highest hot-pressing temperature of 1050 °C. The mobility of carriers in the hot-pressed bulk Si is low (≤  ∼ 30 cm{sup -2}V{sup -1}s{sup -1}) mainly due to the scattering of carriers induced by structural defects such as pores.

  20. Personnel emergency carrier vehicle

    NASA Technical Reports Server (NTRS)

    Owens, Lester J. (Inventor); Fedor, Otto H. (Inventor)

    1987-01-01

    A personnel emergency carrier vehicle is disclosed which includes a vehicle frame supported on steerable front wheels and driven rear wheels. A supply of breathing air is connected to quick connect face mask coupling and umbilical cord couplings for supplying breathing air to an injured worker or attendant either with or without a self-contained atmospheric protection suit for protection against hazardous gases at an accident site. A non-sparking hydraulic motion is utilized to drive the vehicle and suitable direction and throttling controls are provided for controlling the delivery of a hydraulic driving fluid from a pressurized hydraulic fluid accumulator. A steering axis is steerable through a handle to steer the front wheels through a linkage assembly.

  1. Distinguishing between plasmon-induced and photoexcited carriers in a device geometry

    PubMed Central

    Zheng, Bob Y.; Zhao, Hangqi; Manjavacas, Alejandro; McClain, Michael; Nordlander, Peter; Halas, Naomi J.

    2015-01-01

    The use of surface plasmons, charge density oscillations of conduction electrons of metallic nanostructures, to boost the efficiency of light-harvesting devices through increased light-matter interactions could drastically alter how sunlight is converted into electricity or fuels. These excitations can decay directly into energetic electron–hole pairs, useful for photocurrent generation or photocatalysis. However, the mechanisms behind plasmonic carrier generation remain poorly understood. Here we use nanowire-based hot-carrier devices on a wide-bandgap semiconductor to show that plasmonic carrier generation is proportional to internal field-intensity enhancement and occurs independently of bulk absorption. We also show that plasmon-induced hot electrons have higher energies than carriers generated by direct excitation and that reducing the barrier height allows for the collection of carriers from plasmons and direct photoexcitation. Our results provide a route to increasing the efficiency of plasmonic hot-carrier devices, which could lead to more efficient devices for converting sunlight into usable energy. PMID:26165521

  2. Nonequilibrium plasmon emission drives ultrafast carrier relaxation dynamics in photoexcited graphene

    NASA Astrophysics Data System (ADS)

    Hamm, J. M.; Page, A. F.; Bravo-Abad, J.; Garcia-Vidal, F. J.; Hess, O.

    2016-01-01

    The fast decay of carrier inversion in photoexcited graphene has been attributed to optical phonon emission and Auger recombination. Plasmon emission provides another pathway that, as we show here, drives the carrier relaxation dynamics on ultrafast time scales. In studying the nonequilibrium relaxation dynamics we find that plasmon emission effectively converts inversion into hot carriers, whose energy is then extracted by optical phonon emission. This mechanism not only explains the observed femtosecond lifetime of inversion but also offers the prospect for atomically thin ultrafast plasmon emitters.

  3. In hot water, again

    NASA Astrophysics Data System (ADS)

    Basden, Alastair; Watkins, Sheila

    2009-10-01

    Regarding Norman Willcox's letter about the problems of using solar panels for domestic heating (August p21), I also have thermal solar panels installed. However, contrary to his disappointing experience, I have found that they provide my family with a useful amount of hot water. In our system, the solar energy is used to heat a store of water, which has no other source of heat. Mains-pressure cold water passes through this store via a heat exchanger, removing heat from it and warming up. If the water becomes warm enough, an unpowered thermostatic valve allows it to go straight to the hot taps (mixing it with cold if it is too hot). However, if it is not hot enough, then the water is directed first through our previously installed gaspowered combination boiler and then to the taps.

  4. Reactor hot spot analysis

    SciTech Connect

    Vilim, R.B.

    1985-08-01

    The principle methods for performing reactor hot spot analysis are reviewed and examined for potential use in the Applied Physics Division. The semistatistical horizontal method is recommended for future work and is now available as an option in the SE2-ANL core thermal hydraulic code. The semistatistical horizontal method is applied to a small LMR to illustrate the calculation of cladding midwall and fuel centerline hot spot temperatures. The example includes a listing of uncertainties, estimates for their magnitudes, computation of hot spot subfactor values and calculation of two sigma temperatures. A review of the uncertainties that affect liquid metal fast reactors is also presented. It was found that hot spot subfactor magnitudes are strongly dependent on the reactor design and therefore reactor specific details must be carefully studied. 13 refs., 1 fig., 5 tabs.

  5. Saturn's Hot Plasma Explosions

    NASA Video Gallery

    This animation based on data obtained by NASA's Cassini Spacecraft shows how the "explosions" of hot plasma on the night side (orange and white) periodically inflate Saturn's magnetic field (white ...

  6. Hot Oiling Spreadsheet

    Energy Science and Technology Software Center (ESTSC)

    1993-10-22

    One of the most common oil-field treatments is hot oiling to remove paraffin from wells. Even though the practice is common, the thermal effectiveness of the process is not commonly understood. In order for producers to easily understand the thermodynamics of hot oiling, a simple tool is needed for estimating downhole temperatures. Such a tool has been developed that can be distributed as a compiled spreadsheet.

  7. Pucksat Payload Carrier

    NASA Technical Reports Server (NTRS)

    Milam, M. Bruce; Young, Joseph P.

    1999-01-01

    There is an ever-expanding need to provide economical space launch opportunities for relatively small science payloads. To address this need, a team at NASA's Goddard Space Flight Center has designed the Pucksat. The Pucksat is a highly versatile payload carrier structure compatible for launching on a Delta II two-stage vehicle as a system co-manifested with a primary payload. It is also compatible for launch on the Air Force Medium Class EELV. Pucksat's basic structural architecture consists of six honeycomb panels attached to six longerons in a hexagonal manner and closed off at the top and bottom with circular rings. Users may configure a co-manifested Pucksat in a number of ways. As examples, co-manifested configurations can be designed to accommodate dedicated missions, multiple experiments, multiple small deployable satellites, or a hybrid of the preceding examples. The Pucksat has fixed lateral dimensions and a downward scaleable height. The dimension across the panel hexagonal flats is 62 in. and the maximum height configuration dimension is 38.5 in. Pucksat has been designed to support a 5000 lbm primary payload, with the center of gravity located no greater than 60 in. from its separation plane, and to accommodate a total co-manifested payload mass of 1275 lbm.

  8. Hot Deformation Behavior of NiTiHf Shape Memory Alloy Under Hot Compression Test

    NASA Astrophysics Data System (ADS)

    Belbasi, Majid; Salehi, Mohammad T.; Mousavi, Seyed Ali Asghar Akbari

    2012-12-01

    In this study, the hot deformation behavior of Ni49Ti36Hf15 alloy was investigated. Compression tests were carried out at temperatures ranging from 800 to 1100 °C and at the strain rates of 0.001-1/s. The peak stress decreases with increasing deformation temperature and decreasing strain rate, a behavior which can be described by plotting the Zener-Hollomon parameter as a function of stress. It was realized that dynamic recrystallization (DRX) was responsible for flow softening. Most of the samples exhibited typical DRX stress-strain curves with a single peak stress followed by a gradual fall down stress. Microstructure evolution showed that new recrystallized grains formed in the vicinity of grain boundaries. The hyperbolic-sine-type constitutive model of Ni49Ti36Hf15 alloy was obtained to provide basic data for determining reasonable hot-forming process. The activation energy for hot deformation of the Ni49Ti36Hf15 alloy was close to 410 kJ/mol.

  9. 14 CFR Section 04 - Air Carrier Groupings

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 4 2014-01-01 2014-01-01 false Air Carrier Groupings Section 04 Section 04... REGULATIONS UNIFORM SYSTEM OF ACCOUNTS AND REPORTS FOR LARGE CERTIFICATED AIR CARRIERS Section 04 Air Carrier Groupings (a) All large certificated air carriers are placed into three basic air carrier groupings...

  10. 14 CFR Section 04 - Air Carrier Groupings

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 4 2013-01-01 2013-01-01 false Air Carrier Groupings Section 04 Section 04... REGULATIONS UNIFORM SYSTEM OF ACCOUNTS AND REPORTS FOR LARGE CERTIFICATED AIR CARRIERS Section 04 Air Carrier Groupings (a) All large certificated air carriers are placed into three basic air carrier groupings...